Capacitor module

Abstract

An objective of the present invention is to improve a manufacturing yield of a capacitor module, improve a leakage problem of the capacitor module, and adjust a total capacitance of the capacitor module.MEANS: A capacitor module including a first die and a second die is provided. The first die and the second die respectively include a capacitor device and a circuit structure electrically connected to the capacitor device. The circuit structure includes a pad and a first signal line. The first signal line includes a first pad connection part and a first signal transmission part. The first pad connector is located below the pad and is electrically connected to the pad. The first signal transmission portion is electrically connected to the capacitor device. The first signal line of the first die further includes a first fuse connecting the first pad connecting portion and the first signal transmission portion. The first pad connecting portion of the second die is electrically separated from the first signal transmission portion by cutting the first signal line of the second die.SELECTED DRAWING: Figure 4B

Description

Technical Field

[0001] The present invention relates to a capacitor module.

Background Art

[0002] A silicon capacitor has excellent energy storage and voltage stabilization functions, and can effectively suppress noise in a high-frequency circuit, thereby ensuring the stability and efficient operation of the system. Therefore, it is often used in communication devices, medical devices, and in-vehicle electronic systems.

[0003] However, when a silicon capacitor fails, the filtering performance of the circuit deteriorates, noise increases, and the signal quality is affected. Furthermore, a damaged silicon capacitor can cause power instability, leading to voltage fluctuations, overload, and even system failure. In applications that require high reliability, such as medical devices and in-vehicle electronic devices, damage to the silicon capacitor also affects the safety and long-term operation of the device. Therefore, the yield of silicon capacitors is very important for ensuring the performance and reliability of the entire electronic components.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The object of the present invention is to improve the manufacturing yield of the capacitor module, improve the leakage problem of the capacitor module, and adjust the total capacitance of the capacitor module.

Means for Solving the Problems

[0005] At least one embodiment of the present invention provides a capacitor module comprising a first die and a second die. The first die and the second die each include a capacitor device and a circuit structure electrically connected to the capacitor device. The circuit structure includes a pad and a first signal line. The first signal line includes a first pad connector and a first signal transmission section. The first pad connector is located below the pad and is electrically connected to the pad. The first signal transmission section is electrically connected to the capacitor device. The first signal line of the first die further includes a first fuse connecting the first pad connector and the first signal transmission section. By disconnecting the first signal line of the second die, the first pad connector of the second die is electrically isolated from the first signal transmission section. [Effects of the Invention]

[0006] Based on the above, by electrically isolating the first pad connection of the second die from the first signal transmission section, the influence of the second die on the capacitor module can be reduced. Therefore, if a leakage problem occurs in the second die, the impact of the second die on the yield of the capacitor module can be reduced. Furthermore, even if no leakage problem occurs in the second die, the total capacitance of the capacitor module can be adjusted by disconnecting the first signal line of the second die. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic three-dimensional view of a wafer relating to one embodiment of the present invention. [Figure 2A] This is a schematic cross-sectional view of a capacitor module according to one embodiment of the present invention. [Figure 2B] This is a schematic cross-sectional view along the line A-A' in Figure 2A. [Figure 3] This is a schematic cross-sectional view of a die relating to one embodiment of the present invention. [Figure 4A] This is a schematic cross-sectional view of a die according to one embodiment of the present invention. [Figure 4B] This is a schematic cross-sectional view along the line A-A' in Figure 4A. [Figure 5A]This is a schematic cross-sectional view of a capacitor module according to one embodiment of the present invention. [Figure 5B] This is a schematic cross-sectional view of the second die in Figure 5A. [Figure 6A] This is a schematic cross-sectional view of a die according to one embodiment of the present invention. [Figure 6B] This is a schematic cross-sectional view along the line A-A' in Figure 6A. [Figure 7] This is a schematic cross-sectional view of a die according to another embodiment of the present invention. [Figure 8A] This is a schematic cross-sectional view of a die according to yet another embodiment of the present invention. [Figure 8B] This is a schematic cross-sectional view along the line A-A' in Figure 8A. [Figure 8C] This is a schematic cross-sectional view along the line B-B' in Figure 8A. [Figure 9A] This is a schematic cross-sectional view of a die according to yet another embodiment of the present invention. [Figure 9B] This is a schematic cross-sectional view along the line A-A' in Figure 9A. [Figure 9C] This is a schematic cross-sectional view along the line B-B' in Figure 9A. [Figure 10] This is a schematic diagram of a local cross-section of a die according to yet another embodiment of the present invention. [Figure 11] This is a flowchart illustrating a method for repairing a capacitor module according to one embodiment of the present invention. [Modes for carrying out the invention]

[0008] Figure 1 is a schematic three-dimensional view of a wafer 1 according to one embodiment of the present invention. The wafer 1 includes a plurality of dies 100, and each die 100 has a cutting line CL between them.

[0009] Figure 2A is a schematic cross-sectional view of a capacitor module according to one embodiment of the present invention. Figure 2B is a schematic cross-sectional view along the line A-A' in Figure 2A. Referring to Figures 2A and 2B, wafer 1 is cut to obtain a capacitor module 10 containing a plurality of dies 100. The number of dies 100 in the capacitor module 10 can be determined according to the actual needs. For example, each die 100 includes a component area 102 and a peripheral area 104 surrounding the component area 102. The component area 102 contains a capacitor device (not shown in Figure 2A). For example, the capacitor device includes a plurality of capacitors connected in parallel. Here, the capacitors are, for example, silicon capacitors, metal-insulating layer-metal capacitors, or other arbitrary types of capacitors. The number of dies 100 in the capacitor module 10 is determined according to the requirements of the capacitor value. The more desired capacitor devices there are, the greater the number of dies 100 in the capacitor module 10.

[0010] In one embodiment, the die 100 includes a substrate 110 and a circuit structure 120 located on the substrate 110. The substrate 110 is, for example, a semiconductor substrate. The circuit structure 120 is, for example, an internal connection layer or a redistribution layer. In one embodiment, the capacitor device is located within the substrate 110 and / or the circuit structure 120.

[0011] The cutting line CL is located within the peripheral region 104. In one embodiment, the thickness t1 of the capacitor module 10 at the cutting line CL is smaller than the thickness t2 of the capacitor module 10 in the component region 102.

[0012] FIG. 3 is a schematic cross-sectional view of die 100 according to an embodiment of the present invention. Specifically, FIG. 3 is a schematic cross-sectional view of the circuit structure 120 of each die 100 in FIG. 2A. Referring to FIG. 3, the circuit structure 120 of die 100 includes a plurality of pads 1221A and a plurality of pads 1221B. Pads 1221A and pads 1221B are electrically connected to two opposing electrodes of a capacitor, respectively. For example, pad 1221A is configured to receive a power supply voltage from a power supply, and pad 1221B is configured to receive a ground voltage. In one embodiment, pads 1221A and pads 1221B may have a similar structure.

[0013] FIG. 4A is a partial schematic cross-sectional view of a die according to an embodiment of the present invention. For example, FIG. 4A is a partial schematic cross-sectional view of die 100 in FIG. 3. The structure of pads 1221A and / or pads 1221B in FIG. 3 may be as shown in pads 1221 in FIG. 4A. FIG. 4B is a schematic cross-sectional view along line A-A' of FIG. 4A.

[0014] Referring to FIGS. 4A and 4B, capacitor device C is located within or on substrate 110. Circuit structure 120 is located on substrate 110 and is electrically connected to capacitor device C. Circuit structure 120 includes pads 1221, electrode layer 1222, through holes 1231, through holes 1232, signal lines 124, through holes 125, transmission lines 126a, transmission lines 126b, through holes 127, insulating structure 121, and protective layer 129.

[0015] Pads 1221 are disposed in bonding region PA. Electrode layer 1222 surrounds pads 1221, and electrode layer 1222 and pads 1221 are separated from each other. In one embodiment, pads 1221 and electrode layer 1222 belong to the same conductive layer (for example, conductive layer M1). For example, pads 1221 and electrode layer 1222 are formed simultaneously. In one embodiment, the shape of pads 1221 may include an octagon, hexagon, rectangle, triangle, circle, or other geometric shape.

[0016] The signal line 124 includes a pad connection section 1241, a signal transmission section 1243, and a fuse 1242 connecting the pad connection section 1241 and the signal transmission section 1243. In one embodiment, the pad connection section 1241 is located below the pad 1221, and the signal transmission section 1243 is located below the electrode layer 1222. The pad connection section 1241 is electrically connected to the pad 1221. For example, the pad 1221 is electrically connected to the pad connection section 1241 via a through hole 1231 located below it. The signal transmission section 1243 is selectively electrically connected to the electrode layer 1222. For example, the electrode layer 1222 is electrically connected to the signal transmission section 1243 via a through hole 1232 located below it.

[0017] The fuse 1242 overlaps the gap between the electrode layer 1222 and the pad 1221. If a die failure (e.g., leakage) occurs, the fuse 1242 can be cut by a laser or etching process, electrically isolating the pad connection 1241 and the signal transmission section 1243 from each other, thereby reducing the adverse effects of the failed die on the capacitor module. In one embodiment, the failed die is electrically isolated from the other dies in the capacitor module by cutting the fuses corresponding to each pad 1221A (see Figure 3) and / or each pad 1221B (see Figure 3) of the failed die. This reduces the total capacitance value of the capacitor module, but avoids adverse effects of the failed die on the other normally functioning dies (e.g., reduces problems caused by leakage). Therefore, the yield of the capacitor module can be improved.

[0018] The width of each fuse 1242 is narrower than the width of the pad connection 1241 and the signal transmission section 1243, making the fuses 1242 more prone to blowing. However, due to the narrow width of the fuses 1242, they increase the overall resistance of the signal line 124. By placing multiple fuses 1242 between one pad connection 1241 and one signal transmission section 1243, the resistance of the signal line 124 can be reduced compared to the case where there is only one fuse 1242 connecting the pad connection 1241 and one signal transmission section 1243. The number of fuses 1242 between one pad connection 1241 and one signal transmission section 1243 can be adjusted according to the actual needs.

[0019] In this embodiment, multiple signal lines 124 belong to the same conductive layer (for example, conductive layer M2). For example, multiple signal lines 124 are formed simultaneously. Conductive layer M2 is electrically connected to conductive layer M1 via through holes 1231 and 1232.

[0020] Transmission lines 126a and 126b are located below signal line 124. Here, transmission line 126a is located below signal transmission unit 1243, and transmission line 126b is located below pad connection unit 1241. Transmission lines 126a and 126b are located between signal line 124 and capacitor device C. Here, signal transmission unit 1243 is electrically connected to transmission line 126a via through hole 125, and is electrically connected to capacitor device C via transmission line 126a and corresponding through hole 127 below transmission line 126a. On the other hand, transmission line 126b is connected to capacitor device C via corresponding through hole 127. However, transmission line 126b is not connected to pad 1221 shown in Figures 4A and 4B. Specifically, the lower surface of pad connection unit 1241 is not directly connected to any through hole, and therefore pad connection unit 1241 cannot be electrically connected to transmission line 126b located directly below it via a through hole. In this embodiment, the insulating structure 121 covers the signal line 124, and the entire lower surface of the pad connection portion 1241 is in contact with the insulating structure 121. In one embodiment, the transmission line 126b may be electrically connected to other pads not shown in Figures 4A to 4B.

[0021] In one embodiment, the extension directions of the transmission lines 126a and 126B are not parallel to the extension direction of the signal line 124. For example, the extension directions of the transmission lines 126a and 126B are perpendicular to the extension direction of the signal line 124.

[0022] In this embodiment, multiple transmission lines 126a and 126b belong to the same conductive layer (for example, conductive layer M3). For example, multiple transmission lines 126a and 126b are formed simultaneously. Conductive layer M3 is electrically connected to conductive layer M2 via through holes 125.

[0023] The protective layer 129 is located on the insulating structure 121 and has openings 129A and 129B. Opening 129A exposes a pad 1221, for example, a pad 1221 within a bonding region PA. Opening 129B overlaps with a plurality of fuses 1242. In one embodiment, the position of the fuses 1242 can be determined by the position of opening 129B.

[0024] Each die 100 in the capacitor module 10 shown in Figure 2A is tested. For example, a probe is used to contact pad 1221A (see Figure 3) with pad 1221B (see Figure 3) to detect leakage current. The total leakage current of the capacitor module 10 is calculated. Based on the total leakage current, the number of fuses 1242 in the die 100 that need to be blown is calculated. For example, after testing each die 100 in the capacitor module 10, it is found that some of the dies 100 are faulty, as shown in Figure 5A. The faulty die is shown as die 100' and is indicated by an "x" in the figure. In one embodiment, a die 100 that can operate normally can be called the first die, and a faulty die 100' can be called the second die. A cutting line CL is provided between die 100 and die 100', and the substrate of die 100 (substrate 110 shown in Figure 2B or Figure 4B) and the substrate of die 100' (substrate 110 shown in Figure 2B or Figure 4B) are connected.

[0025] The circuit structures of die 100 and die 100' each include multiple signal lines 124. As shown in Figures 4A and 4B, the signal lines 124 of die 100 include multiple fuses 1242 connecting the pad connection section 1241 and the signal transmission section 1243. However, the signal lines 124 of die 100' are disconnected, and the pad connection section 1241 of die 100' is electrically isolated from the signal transmission section 1243. For example, as shown in Figures 6A and 6B, the fuses 1242 are disconnected by a laser or etching process. Specifically, the insulating structure 121 below the opening 129B and a portion of the fuse 1242 are removed by a laser or etching process, thereby disconnecting the fuse 1242 below the opening 129B. In one embodiment, as shown in Figure 4B, the opening 129B of die 100 overlaps the fuse 1242. However, the opening 129B of die 100' coincides with the location where the signal line 124 of die 100' is cut, that is, the location where the fuse 1242 is cut.

[0026] By disconnecting the signal line 124 of die 100', the capacitor device C of die 100' is electrically isolated from the pad 1221 to which it was originally connected. In one embodiment, each pad 1221A of die 100' is disconnected in the manner shown in Figures 6A and 6B, and pads 1221B remain in their original state without blowing the fuse 1242, as shown in Figure 5B. In other embodiments, each pad 1221B of die 100' is disconnected in the manner shown in Figures 6A and 6B, and pads 1221A remain in their original state without blowing the fuse. In other embodiments, both each pad 1221A and each pad 1221B of die 100' may be disconnected in the manner shown in Figures 6A and 6B.

[0027] In one embodiment, after the fuse 1242 is blown, residue 1242' remains on the pad connection portion 1241 and / or the signal transmission portion 1243.

[0028] Figure 7 is a schematic cross-sectional view of a die according to another embodiment of the present invention. For example, Figure 7 is a schematic cross-sectional view of die 100 in Figure 3, and the structure of pads 1221A and / or pads 1221B in Figure 3 may be as shown for pad 1221 in Figure 7. It should be particularly noted that the embodiment in Figure 7 uses reference numerals and some of the details of the embodiments in Figures 4A and 4B, employing the same or similar reference numerals to indicate the same or similar components, and omitting the explanation of the same technical content, which will not be repeated here.

[0029] Referring to Figure 7, in this embodiment, narrowing the width of the fuse 1242 increases the resistance of the signal line 124. By increasing the length of the pad 1221 to reduce the resistance between the pad 1221 and the capacitor device, one pad 1221 can be electrically connected to more signal lines 124.

[0030] In one embodiment, the fuse 1242 is blown to isolate the pad 1221 from the capacitor device C. For example, after testing it is found that a chip is a faulty die (or second die), the fuse 1242 in the faulty die is blown to prevent the faulty die from having an adverse effect on the other dies.

[0031] Figure 8A is a schematic cross-sectional view of a die according to yet another embodiment of the present invention. Figure 8B is a schematic cross-sectional view along the line A-A' in Figure 8A. Figure 8C is a schematic cross-sectional view along the line B-B' in Figure 8A. For example, Figure 8A is a schematic cross-sectional view of die 100 in Figure 3, and the structure of pads 1221A and / or pads 1221B in Figure 3 may be as shown for pad 1221 in Figure 8A. It should be noted that the embodiments in Figures 8A to 8C borrow reference numerals and some of the content from the embodiments in Figures 4A and 4B, using the same or similar reference numerals to indicate the same or similar components, and the same technical content is omitted and not repeated here.

[0032] Referring to Figures 8A to 8C, in this embodiment, the pad 1221 is, for example, H-shaped. Specifically, the pad 1221 includes a main body 1221a and four branch portions 1221b. The main body 1221a extends along direction D1. The branch portions 1221b are parallel to direction D2. Two of the four branch portions 1221b extend outward from one side of the main body 1221a, and the other two extend outward from the other side of the main body 1221a. The electrode layer 1222 surrounds the pad 1221.

[0033] Referring to Figures 8A and 8B, the signal line 124a includes a pad connector 1241a, a signal transmission unit 1243a, and a fuse 1242a connecting the pad connector 1241a and the signal transmission unit 1243a. The pad connector 1241a is located below the main body 1221a, and the main body 1221a is electrically connected to the pad connector 1241a via a through hole 1231. In this embodiment, a portion of the transmission line 126a extends and passes through the pad connector 1241a of the signal line 124a located below the main body 1221a, but there is no through hole directly below the pad connector 1241a to connect the bottom surface of the signal line 124a.

[0034] Referring to Figures 8A and 8C, signal line 124b includes a pad connection 1241b, a signal transmission section 1243b, a signal transmission section 1243c, a fuse 1242b, and a fuse 1242c. Signal line 124b is, for example, parallel to signal line 124a. In this embodiment, signal line 124a and signal line 124b are located on the same conductive layer (i.e., conductive layer M2). In other words, signal line 124a and signal line 124b are formed simultaneously.

[0035] The multiple pad connectors 1241b of each signal line 124b are each located below two of the four branch sections 1221b. The pad connectors 1241b are electrically connected to the branch sections 1221b of the pad 1221 via the through holes 1231.

[0036] The signal transmission sections 1243b and 1243c are located below the electrode layer 1222 and are electrically connected to the electrode layer 1222 via through holes 1232. The signal transmission sections 1243b and 1243c are electrically connected to the capacitor device C. For example, the signal transmission sections 1243b and 1243c are electrically connected to the capacitor device C via through holes 125, transmission lines 126a and 127. By arranging the signal transmission sections 1243b and 1243c, the number of connection points between the conductive layer M1 and the conductive layer M2 can be increased (for example, by increasing the number of through holes 1232), thereby reducing the resistance.

[0037] Multiple fuses 1242b connect the pad connection section 1241b and the signal transmission section 1243b. Multiple fuses 1242c connect the pad connection section 1241b and the signal transmission section 1243c. The number of fuses 1242b and 1242c can be adjusted according to actual needs.

[0038] In one embodiment, each die in the capacitor module is tested, and then the fuses 1242a, 1242b, and 1242c of the faulty die (or referred to as the second die) are blown, as shown in 9A, 9B, and 9C. For example, a laser or etching process is used. Thus, in the repaired capacitor module, in the normal die (or referred to as the first die), pad 1221 (e.g., pad 1221A or pad 1221B in Figure 5B) is electrically connected to the capacitor device C. In the faulty die, pad 1221 (e.g., pad 1221A or pad 1221B in Figure 5B) is electrically isolated from the capacitor device C. As shown in Figures 9A and 9B, the pad connection 1241a is electrically isolated from the signal transmission section 1243a by cutting the signal line 124a of the faulty die. As shown in Figures 9A and 9C, the signal line 124b of the faulty die is severed, electrically isolating the pad connection 1241b from the signal transmission unit 1243b and the signal transmission unit 1243c.

[0039] In one embodiment, after fuses 1242a, 1242b, and 1242c are blown, residues 1242a', 1242b', and 1242c' remain.

[0040] Figure 10 is a schematic cross-sectional view of a die according to yet another embodiment of the present invention. It should be noted that the embodiment in Figure 10 uses reference numerals and some of the details of the embodiments in Figures 4A and 4B, employing the same or similar reference numerals to indicate the same or similar components, and omitting the explanation of the same technical details. The explanation of the omitted parts can be found in the embodiments described above and will not be repeated here. In the die of Figure 10, some capacitor devices C are located directly below the pad 1221, but the capacitor devices C must always be electrically connected to the pad 1221 via the fuse 1242. In other words, the pad 1221 and the capacitor devices C can be electrically isolated simply by cutting the fuse 1242.

[0041] Figure 11 is a flowchart of a capacitor module repair method according to one embodiment of the present invention. Referring to Figure 10, in step S1, each die in the capacitor module is tested. For example, each die 100 in the capacitor module 10 shown in Figure 3 is tested. After testing, as shown in Figure 5A, some of the dies 100 are found to be faulty dies 100'. The faulty dies 100' exhibit problems such as leakage.

[0042] In step S2, the total leakage current of the capacitor module is calculated. In one embodiment, if the total leakage current exceeds the product specification, step S3 is executed. If the total leakage current does not exceed the product specification, the repair is completed.

[0043] In step S3, the number of dies that need to be cut is calculated based on the total leakage current.

[0044] Next, in step S4, the fuses corresponding to the pads in the die are blown. Specifically, as shown in Figures 6A, 6B, 9A, and 9B, the fuses corresponding to the faulty pads in the die are blown by a laser or etching process. In one embodiment, in addition to blowing the fuses corresponding to the pads in the faulty die, fuses corresponding to the non-faulty pads can also be blown to achieve the objective of adjusting the total capacitance of the capacitor module. [Industrial applicability]

[0045] The capacitor module of the present invention can be applied to semiconductor devices. [Explanation of Symbols]

[0046] 1: Wafer 10: Capacitor Module 100, 100': Die 102: Parts Area 104: Peripheral area 110: Circuit board 120:Circuit structure 121: Insulation structure 1221, 1221A, 1221B: Pad 1221a: Main body 1221b: Branch 1222: Electrode layer 1231, 1232, 125, 127: Through holes 124, 124a, 124b: Signal line 1241, 1241a, 1241b: Pad connection section 1242, 1242a, 1242b, 1243c: Fuses 1242', 1242a', 1242b', 1242c': Residue 1243, 1243a, 1243b, 1243c: Signal transmission section 126a, 126b: Transmission line 129: Protective layer 129A, 129B: Opening C: Capacitor Devices CL: Cutting line D1, D2: Direction M1, M2, M3: Conductive layer PA: Bonding Area S1, S2, S3, S4: Process t1, t2: Thickness

Claims

1. A capacitor module comprising a first die and a second die, wherein the first die and the second die are, Capacitor devices and, The circuit structure includes a circuit structure electrically connected to the capacitor device, and the circuit structure is pads and, A first signal line and a first signal line are included, A first pad connection portion is located below the pad and is electrically connected to the pad, The capacitor device includes a first signal transmission unit electrically connected to the capacitor device, A capacitor module in which the first signal line of the first die further includes a plurality of first fuses connecting the first pad connection portion and the first signal transmission portion, and the first pad connection portion of the second die is electrically isolated from the first signal transmission portion when the first signal line of the second die is disconnected.

2. The circuit structures of the first die and the second die are as follows: An insulating structure covering the first signal line, wherein the entire lower surface of the first pad connection portion is in contact with the insulating structure, The capacitor module according to claim 1, further comprising:

3. The circuit structures of the first die and the second die are as follows: A protective layer located on the insulating structure and having a first opening and a second opening, wherein the first opening exposes the pad, the second opening of the first die overlaps with the plurality of first fuses of the first die, and the second opening of the second die overlaps with the position where the first signal transmission section of the second die is disconnected, The capacitor module according to claim 2, further comprising:

4. The pads of the first die and the second die are, A main body portion extending along a first direction, wherein the first pad connection portion is located below the main body portion and is electrically connected to the main body portion, The four branches, of which two extend outward from one side of the main body, and of which the other two extend outward from the other side of the main body, A capacitor module according to claim 1, including the following:

5. The circuit structures of the first die and the second die are as follows: The electrode layer surrounding the pad, The system further includes a second signal line parallel to the first signal line, the second signal line being A plurality of second pad connection portions are located below two of the four branch portions and are electrically connected to the pad, Multiple second signal transmission units electrically connected to the capacitor device, It includes a third signal transmission unit located below the electrode layer and electrically connected to the electrode layer, The capacitor module according to claim 4, wherein the second signal line of the first die further includes a plurality of second fuses connecting the plurality of second pad connections and the plurality of second signal transmission units and a plurality of third fuses connecting the plurality of second pad connections and the third signal transmission unit, and when the second signal line of the second die is disconnected, the plurality of second pad connections of the second die are electrically isolated from the plurality of second signal transmission units and the third signal transmission unit.

6. The width of each of the plurality of first fuses in the first die is narrower than the width of the first signal transmission section. The capacitor module according to claim 1.

7. The circuit structures of the first die and the second die are as follows: The system further includes a transmission line located between the first signal line and the capacitor device, wherein the extension direction of the transmission line is not parallel to the extension direction of the first signal line. The capacitor module according to claim 1.

8. The second die is tested as a faulty die. The capacitor module according to claim 1.

9. A cutting line is included between the first die and the second die, and the substrate of the first die is connected to the substrate of the second die. The capacitor module according to claim 1.

10. The capacitor device of the first die includes a plurality of capacitors connected in parallel. The capacitor module according to claim 1.

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