Holding device, joining device, and holding method

Abstract

A holding device according to an aspect of the present disclosure comprises: a holding surface that holds a thin plate in a non-contact manner; a first vibration generation unit that applies ultrasonic vibration of a first amplitude to the holding surface; and a second vibration generation unit that is provided around the first vibration generation unit and applies ultrasonic vibration of a second amplitude that is greater than the first amplitude to the holding surface.

Description

Technical Field

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[0001] The present disclosure relates to a holding device, a bonding device, and a holding method.

Background Art

[0002] A non-contact chuck for holding a workpiece without contact is known (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of suppressing displacement during non-contact holding of a thin plate.

Means for Solving the Problems

[0005] A holding device according to an aspect of the present disclosure includes a holding surface for holding a thin plate without contact, a first vibration generating unit that applies ultrasonic vibration with a first amplitude to the holding surface, and a second vibration generating unit that is provided around the first vibration generating unit and applies ultrasonic vibration with a second amplitude larger than the first amplitude to the holding surface.

Effects of the Invention

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

[0009] 〔Bonding System〕 Referring to FIGS. 1 to 11, the bonding system 1 according to the embodiment will be described. As shown in FIG. 7, the bonding system 1 manufactures a substrate with dies CW by bonding a die CP and a substrate W. The substrate with dies CW includes a substrate W and a plurality of dies CP bonded to the substrate W.

[0010] The die CP has a base substrate S1 and a device D1 formed on the base substrate S1. The base substrate S1 is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. The device D1 includes a semiconductor element, a circuit, or a terminal, etc. The device D1 is formed on the bonding surface CPa of the die CP.

[0011] The substrate W has a base substrate S2 and a plurality of devices D2 formed on the base substrate S2. The base substrate S2 is, for example, a silicon wafer, a compound semiconductor wafer, or a glass substrate. The device D2 includes a semiconductor element, a circuit, or a terminal, etc. The device D2 is formed on the bonding surface Wa of the substrate W.

[0012] [[ID=​​​As shown in FIG. 1, the bonding system 1 includes a loading / unloading station 2, a processing station 3, and a control device 9. The loading / unloading station 2 and the processing station 3 are arranged in this order from the negative X-axis side to the positive X-axis side.

[0014] The loading / unloading station 2 includes a mounting table 20. Cassettes C1 to C6 are mounted on the mounting table 20. Cassette C1 houses a plurality of dies CP held by the first die carrier FC. Cassette C2 houses the used first die carrier FC from which at least some of the dies CP have been removed. Cassettes C3 and C4 house the second die carrier SC. Cassette C5 houses the substrate W before bonding to the die CP. Cassette C6 houses the substrate CW with dies.

[0015] As shown in FIG.  3, the first die carrier FC has a tape TP to which the die CP is adhered and a frame FR to which the outer periphery of the tape TP is adhered. A plurality of dies CP are arranged in the opening of the frame FR. The plurality of dies CP are obtained, for example, by dicing a substrate in a state where the substrate is adhered to the tape TP. The bonding surface CPa of the die CP is protected by a protective film PF before dicing. The protective film PF is disposed on the opposite side of the tape TP with the die CP interposed therebetween. The protective film PF is removed before bonding the die CP to the substrate W.

[0016] As shown in FIG. 5, the second die carrier SC holds a plurality of dies CP removed from the first die carrier FC. The second die carrier SC is, for example, an electrostatic carrier. The electrostatic carrier electrostatically adsorbs a plurality of dies CP. The electrostatic carrier may electrostatically adsorb and vacuum-adsorb a plurality of dies CP at the same time. Even after the electrostatic adsorption force disappears, it is possible to continue holding the plurality of dies CP by the vacuum adsorption force.

[0017] In this embodiment, the second die carrier SC holds multiple die CPs having the same function, but it may also hold multiple die CPs having different functions. In the latter case, multiple first die carriers FC are provided according to the function of the die CPs. It is also possible to transfer multiple die CPs having different functions from multiple first die carriers FC to a single second die carrier SC.

[0018] The reason for transferring the die CP from the first die carrier FC to the second die carrier SC is that, before bonding the die CP to the substrate W, the protective film PF is removed from the die CP and the bonding surface CPa of the die CP is modified. This is to prevent damage to the tape TP of the first die carrier FC during the modification of the bonding surface CPa. Details of the second die carrier SC will be described later.

[0019] As shown in Figure 1, the loading / unloading station 2 comprises a transport area 21, a first die carrier transport arm 22, a second die carrier transport arm 23, and a substrate transport arm 24. Hereinafter, the first die carrier transport arm 22, the second die carrier transport arm 23, and the substrate transport arm 24 may be collectively referred to as transport arms 22 to 24.

[0020] The transport area 21 is adjacent to the mounting table 20. The transport arms 22-24 hold and transport the first die carrier FC, the second die carrier SC, or the substrate W within the transport area 21. Each of the transport arms 22-24 is capable of movement in the horizontal direction (both in the X-axis and Y-axis directions) and the vertical direction, as well as rotation around the vertical axis.

[0021] The conveying device consists of conveying arms 22-24 and a drive unit (not shown) that moves or rotates the conveying arms 22-24. The conveying arms 22-24 may be mounted on the same Y-axis slider and moved simultaneously in the Y-axis direction, as shown in Figure 1, or they may be mounted on different Y-axis sliders and moved independently in the Y-axis direction. The conveying arms 22-24 are positioned at different heights.

[0022] The loading / unloading station 2 is equipped with a transition device 25 on the opposite side of the transport area 21 from the mounting table 20. The transition device 25 is located between the transport area 21 of the loading / unloading station 2 and the transport area 31 of the processing station 3, and relays the first die carrier FC, the second die carrier SC, or the substrate W between them. Multiple transition devices 25 may be stacked in the Z-axis direction.

[0023] The processing station 3 comprises a transport area 31, a first die carrier transport arm 32, a second die carrier transport arm 33, and a substrate transport arm 34. Hereinafter, the first die carrier transport arm 32, the second die carrier transport arm 33, and the substrate transport arm 34 may be collectively referred to as transport arms 32 to 34.

[0024] The transport area 31 extends in the X-axis direction. The transport arms 32-34 hold and transport the first die carrier FC, the second die carrier SC, or the substrate W within the transport area 31. Each of the transport arms 32-34 is capable of horizontal movement (in both the X-axis and Y-axis directions) and vertical movement, as well as rotation around the vertical axis.

[0025] The conveying device consists of conveying arms 32-34 and a drive unit (not shown) that moves or rotates the conveying arms 32-34. The conveying arms 32-34 may be mounted on the same X-axis slider and moved simultaneously in the X-axis direction, as shown in Figure 1, or they may be mounted on different X-axis sliders and moved independently in the X-axis direction. The conveying arms 32-34 are positioned at different heights.

[0026] The processing station 3 comprises a die arrangement device 35, a washing device 36, a first activation device 37, a first hydrophilization device 38, an inversion device 39, a second activation device 40, a second hydrophilization device 41, and a bonding device 42. These devices 35 to 42 are adjacent to the transport area 31 and are positioned on either the positive or negative Y-axis side of the transport area 31, respectively.

[0027] As shown in Figure 8, the die arrangement device 35 transfers the die CP from the first die carrier FC to the second die carrier SC. This prevents damage to the tape TP of the first die carrier FC when the bonding surface CPa is modified. Details of the die arrangement device 35 will be described later.

[0028] The cleaning device 36 removes the protective film PF from the die CP while the die CP is held in the second die carrier SC. The cleaning device 36 also cleans the bonding surface CPa of the die CP. This improves the processing quality of the bonding surface CPa that is subsequently processed.

[0029] The first activation device 37 activates the bonding surface CPa of the die CP while the die CP is held in the second die carrier SC. The first activation device 37 is, for example, a plasma processing device. In the first activation device 37, for example, oxygen gas, which is the processing gas, is excited and plasma-generated under reduced pressure and then ionized. The bonding surface CPa of the die CP is activated when oxygen ions are irradiated onto it. The processing gas is not limited to oxygen gas, and may be nitrogen gas, for example.

[0030] The first hydrophilization device 38 hydrophilizes the bonding surface CPa of the die CP while the die CP is held in the second die carrier SC. For example, the first hydrophilization device 38 supplies pure water (e.g., deionized water) onto the die CP while rotating the second die carrier SC, which is held in a spin chuck. The pure water imparts OH groups to the bonding surface CPa of the die CP, which has been previously activated. The die CP and the substrate W can be bonded by utilizing the hydrogen bonds between the OH groups.

[0031] The inversion device 39 inverts the second die carrier SC while the die CP is held in the second die carrier SC. Multiple die CPs can be inverted simultaneously, and the bonding surface CPa of each die CP can be oriented downwards. The inversion device 39 may be provided inside the bonding device 42.

[0032] The second activation apparatus 40 activates the bonding surface Wa of the substrate W. The second activation apparatus 40 is, for example, a plasma processing apparatus. In the second activation apparatus 40, for example, oxygen gas, which is the processing gas, is excited and plasma-generated under reduced pressure and then ionized. The bonding surface Wa of the substrate W is activated when oxygen ions are irradiated onto it. The processing gas is not limited to oxygen gas, and may be, for example, nitrogen gas.

[0033] The second hydrophilization device 41 hydrophilizes the bonding surface Wa of the substrate W. For example, the second hydrophilization device 41 rotates the substrate W, which is held in a spin chuck, while supplying pure water (e.g., deionized water) onto the substrate W. The pure water imparts OH groups to the bonding surface Wa of the substrate W, which has been previously activated. The die CP and the substrate W can be bonded by utilizing the hydrogen bonds between the OH groups.

[0034] As shown in Figures 10 and 11, the bonding apparatus 42 removes the die CP from the second die carrier SC and bonds the die CP to the substrate W with the bonding surface CPa of the removed die CP facing the bonding surface Wa of the substrate W. A substrate CW with a die is obtained. Device D1 of the die CP and device D2 of the substrate W are electrically connected. Details of the bonding apparatus 42 will be described later.

[0035] The control device 9 is, for example, a computer and comprises an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as memory. The storage unit 92 stores programs that control various processes executed in the junction system 1. The control device 9 controls the operation of the junction system 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92. A unit control unit is provided for each unit constituting the junction system 1 to control the operation of the unit, and a system control unit may be provided to comprehensively control multiple unit control units. The control device 9 may be composed of a unit control unit and a system control unit.

[0036] (Joining method) Referring to Figure 2, the joining method according to the embodiment will be described. The process in Figure 2 is carried out under the control of the control device 9.

[0037] First, the first die carrier transport arm 22 removes multiple die CPs along with the first die carrier FC from the cassette C1 and transports them to the transition device 25. Next, the first die carrier transport arm 32 removes multiple die CPs along with the first die carrier FC from the transition device 25 and transports them to the die arrangement device 35.

[0038] Next, the second die carrier transport arm 23 removes the second die carrier SC from the cassette C3 and transports it to the transition device 25. Then, the second die carrier transport arm 33 removes the second die carrier SC from the transition device 25 and transports it to the die arrangement device 35.

[0039] Next, the die arrangement device 35 transfers the die CP from the first die carrier FC to the second die carrier SC (step S101). Then, the second die carrier transport arm 33 removes multiple die CPs along with the second die carrier SC from the die arrangement device 35 and transports them to the cleaning device 36.

[0040] Next, the cleaning device 36 removes the protective film PF from the die CP while the die CP is held in place by the second die carrier SC (step S102). After that, the second die carrier transport arm 33 removes multiple die CPs together with the second die carrier SC from the cleaning device 36 and transports them to the first activation device 37.

[0041] Next, the first activation device 37 activates the bonding surface CPa of the die CP while the die CP is held by the second die carrier SC (step S103). After that, the second die carrier transport arm 33 removes multiple die CPs together with the second die carrier SC from the first activation device 37 and transports them to the first hydrophilization device 38.

[0042] Next, the first hydrophilization device 38 hydrophilizes the bonding surface CPa of the die CP while the die CP is held by the second die carrier SC (step S104). After that, the second die carrier transport arm 33 removes multiple die CPs together with the second die carrier SC from the first hydrophilization device 38 and transports them to the inversion device 39.

[0043] Next, the inversion device 39 inverts the second die carrier SC while it is holding the die CP (step S105). Then, the second die carrier transport arm 33 removes the second die carrier SC and multiple die CPs from the inversion device 39 and transports them to the bonding device 42.

[0044] In parallel with the above steps S101 to S105, the following steps S106 to S107 are performed. First, the substrate transport arm 24 removes the substrate W from the cassette C5 and transports it to the transition device 25. Then, the substrate transport arm 34 removes the substrate W from the transition device 25 and transports it to the second activation device 40.

[0045] Next, the second activation device 40 activates the bonding surface Wa of the substrate W (step S106). After that, the substrate transport arm 34 removes the substrate W from the second activation device 40 and transports it to the second hydrophilization device 41.

[0046] Next, the second hydrophilization device 41 hydrophilizes the bonding surface Wa of the substrate W (step S107). After that, the substrate transport arm 34 removes the substrate W from the second hydrophilization device 41 and transports it to the bonding device 42.

[0047] Next, the bonding apparatus 42 removes the die CP from the second die carrier SC and bonds the die CP to the substrate W with the bonding surface CPa of the removed die CP facing the bonding surface Wa of the substrate W (step S108). This yields a die-attached substrate CW. The die-attached substrate CW may be heated in an annealing apparatus (not shown) to improve the bonding strength between the die CP and the substrate W.

[0048] Subsequently, the substrate transport arm 34 removes the die-equipped substrate CW from the bonding device 42 and transports it to the transition device 25. Finally, the substrate transport arm 24 removes the die-equipped substrate CW from the transition device 25 and stores it in the cassette C6. The die-equipped substrate CW is then discharged from the bonding system 1 while stored in the cassette C6.

[0049] After step S108, the second die carrier transport arm 33 removes the second die carrier SC from the joining device 42 and transports it to the transition device 25. Then, the second die carrier transport arm 23 removes the second die carrier SC from the transition device 25 and stores it in cassette C4.

[0050] Furthermore, after step S101, the first die carrier transport arm 32 removes the first die carrier FC from the die arrangement device 35 and transports it to the transition device 25. Subsequently, the first die carrier transport arm 22 removes the first die carrier FC from the transition device 25 and stores it in cassette C2.

[0051] [Die array device] Referring to Figures 8 and 9, the die arrangement apparatus 35 and the second die carrier SC will be described in detail. As shown in Figure 8, the die arrangement apparatus 35 transfers the die CP from the first die carrier FC to the second die carrier SC. This allows the use of a die carrier with relatively superior durability when modifying the bonding surface CPa.

[0052] The second die carrier SC is not particularly limited as long as it has superior durability compared to the first die carrier FC, but for example, it is an electrostatic carrier. The electrostatic carrier has, for example, a conductive substrate SC1 and an insulating film SC2, and electrostatically attracts the die CP to the side opposite to the conductive substrate SC1 with respect to the insulating film SC2.

[0053] The conductive substrate SC1 is made of, for example, silicon, aluminum, aluminum alloy, stainless steel, or titanium. One or more through holes H1 may be formed in the conductive substrate SC1 for each die CP. The die CP can be separated from the second die carrier SC by supplying gas to the through holes H1 or by inserting a pin (not shown) into the through holes H1. The number and arrangement of the through holes H1 are not particularly limited.

[0054] The insulating film SC2 maintains electrostatic attraction by restricting charge transfer between the die CP's base substrate S1 and the conductive substrate SC1, as shown in Figure 9. The insulating film SC2 preferably has a dielectric breakdown voltage of 30kV or higher, and more preferably 40kV or higher.

[0055] The insulating film SC2 is preferably composed of a flexible material, specifically a material with an elastic modulus of 2 GPa or less, more preferably 0.5 GPa or less. From the viewpoint of durability when modifying the bonding surface CPa, for example, polyimide or EVA (ethylene-vinyl acetate copolymer) is used. The thickness of the insulating film SC2 is, for example, 10 μm.

[0056] The insulating film SC2 may have through holes that communicate with the through holes H1 in the conductive substrate SC1. Preferably, the diameter of the through holes in the insulating film SC2 is smaller than the diameter of the through holes H1 in the conductive substrate SC1. However, through holes are not required. In this case, the die CP can be removed by expanding the insulating film SC2.

[0057] It is preferable that the second die carrier SC has the same diameter as the substrate W. In this case, the second die carrier transport arm 23 and the substrate transport arm 24 can use the same model number (i.e., the same dimensions and shape), thereby reducing costs. Similarly, the second die carrier transport arm 33 and the substrate transport arm 34, the first activation device 37 and the second activation device 40, or the first hydrophilization device 38 and the second hydrophilization device 41 can use the same model number, thereby reducing costs. This also helps to suppress the increase in size of the device.

[0058] As shown in Figure 8, the die array device 35 comprises a first die carrier holding section 351, a pressing section 352, a second die carrier holding section 353, and a die transport mechanism 354. The first die carrier holding section 351 holds the first die carrier FC from below. The first die carrier FC holds the die CP with the bonding surface CPa of the die CP facing upwards. The first die carrier holding section 351 holds the frame FR of the first die carrier FC but does not hold the tape TP.

[0059] The pressing section 352 locally presses the die CP via the tape TP and locally deforms the tape TP. This allows the die CPs to be individually pushed up, and prevents them from rubbing against each other when picking them up. The pressing section 352 and the first die carrier holding section 351 are relatively movable, allowing the position in which the die CPs are pushed up to be changed.

[0060] The second die carrier holding unit 353 holds the second die carrier SC from below. The second die carrier SC holds the die CP with the bonding surface CPa of the die CP facing upwards. Similarly, the first die carrier FC also holds the die CP with the bonding surface CPa of the die CP facing upwards. Therefore, the die transport mechanism 354 also transports the die CP with the bonding surface CPa of the die CP facing upwards. The die transport mechanism 354 does not invert the die CP.

[0061] The die transport mechanism 354 has a suction head 355 that adsorbs the die CP. The suction head 355 is positioned above the die CP. The bonding surface CPa of the die CP is covered with a protective film PF, and the suction head 355 adsorbs the die CP via the protective film PF. The suction head 355 is in contact with the protective film PF but not with the die CP. Therefore, damage to the die CP can be suppressed.

[0062] As shown in Figure 9, the die array apparatus 35 includes a charge supply unit 356 and a static elimination unit 358. The charge supply unit 356 supplies a charge of a first polarity (e.g., positive) to the conductive substrate SC1 by applying a voltage to the conductive substrate SC1. The static elimination unit 358 removes the charge of the first polarity from the die CP, leaving a charge of a second polarity (e.g., negative), which is the opposite polarity to the first polarity, on the die CP.

[0063] A charge of the first polarity accumulates on the conductive substrate SC1, while a charge of the second polarity accumulates on the die CP. As a result, a potential difference is created between the conductive substrate SC1 and the die CP across the insulating film SC2, generating an electrostatic attraction force. This generated electrostatic attraction force is maintained even after the voltage applied to the conductive substrate SC1 and the discharge of the die CP.

[0064] The charge supply unit 356 has, for example, a power supply pin 357 that contacts the conductive substrate SC1. The power supply pin 357 is provided, for example, on the second die carrier holding unit 353 and is electrically connected to a power supply (not shown). The static elimination unit 358 has, for example, a ground wire 359. The ground wire 359 removes the charge of the first polarity from the die CP, for example, via a protective film PF.

[0065] In this embodiment, the ground wire 359 is embedded in the suction head 355, but it may be provided separately from the suction head 355. In this embodiment, the die CPs are electrostatically attracted one by one, but multiple die CPs may be arranged on the insulating film SC2 and then electrostatically attracted simultaneously.

[0066] As described above, the insulating film SC2 is made of a flexible material. When the die CP is pressed against the insulating film SC2 by electrostatic attraction, the insulating film SC2 deforms so that air escapes from between the die CP and the insulating film SC2, and a vacuum attraction force is generated between the die CP and the insulating film SC2.

[0067] Even if charge leaks from the conductive substrate SC1 or die CP and the electrostatic attraction force is lost, it is still possible to continue holding multiple die CPs with vacuum attraction force. Causes of charge leakage include, for example, the supply of processing liquid to the die CP during the removal of the protective film PF or the modification of the bonding surface CPa.

[0068] [Joining equipment] The details of the bonding apparatus 42 will be described with reference to Figures 10 and 11. As shown in Figures 10 and 11, the bonding apparatus 42 removes the die CP from the second die carrier SC and bonds the die CP to the substrate W with the bonding surface CPa of the removed die CP facing the bonding surface Wa of the substrate W. A die-attached substrate CW is obtained. Device D1 of the die CP and device D2 of the substrate W are electrically connected.

[0069] The bonding apparatus 42 includes, for example, a die carrier holding section 421, a substrate holding section 422, a first die transport mechanism 423, and a second die transport mechanism 424. The die carrier holding section 421 holds the second die carrier SC from above, with the bonding surfaces CPa of each die CP held by the second die carrier SC facing downwards. The substrate holding section 422 holds the substrate W from below, with the bonding surface Wa of the substrate W facing upwards. The first die transport mechanism 423 receives the die CP from the second die carrier SC and transports the die CP with the bonding surface CPa facing downwards. The second die transport mechanism 424 receives the die CP from the first die transport mechanism 423 and bonds the die CP to the substrate W with the bonding surface CPa facing downwards.

[0070] According to this embodiment, the inversion device 39 inverts the second die carrier SC before the die carrier holding unit 421 holds the second die carrier SC. Multiple die CPs can be inverted simultaneously in advance, and the bonding surface CPa of each die CP can be oriented downwards. The first die transport mechanism 423 and the second die transport mechanism 424 do not individually invert the die CPs during transport. The mechanism for individually inverting die CPs can be eliminated, and dust generation from that mechanism can be suppressed. In addition, the structure of the first die transport mechanism 423 and the second die transport mechanism 424 can be simplified. Furthermore, the number of inversions can be reduced, and throughput can be improved.

[0071] According to this embodiment, the die carrier holding section 421 holds the second die carrier SC from above, and the substrate holding section 422 holds the substrate W from below. By holding the substrate W, which is larger and heavier than the die CP, from below, the substrate W can be held stably, and the die CP can be joined to a desired position on the substrate W. The accuracy of the joining position is mainly determined by the alignment accuracy of the second die transport mechanism 424 and the substrate holding section 422. The alignment accuracy of the first die transport mechanism 423 and the die carrier holding section 421 may be lower than that alignment accuracy. Therefore, even if the die carrier holding section 421 holds the second die carrier SC from above, the accuracy of the joining position does not deteriorate.

[0072] In this embodiment, the die carrier holding portion 421 holds the second die carrier SC, but it may also hold the first die carrier FC. If the bonding system 1 does not modify the bonding surface CPa of the die CP, there is no need to transfer the die CP from the first die carrier FC to the second die carrier SC. Therefore, the die carrier holding portion 421 may also hold the first die carrier FC.

[0073] When the die carrier holding unit 421 holds the first die carrier FC, the inversion device 39 only needs to invert the first die carrier FC vertically. Multiple dies CP can be inverted vertically all at once in advance, and the bonding surface CPa of each die CP can be oriented downwards. The mechanism for individually inverting the dies CP can be eliminated, and dust generation from that mechanism can be suppressed. In addition, the structure of the first die transport mechanism 423 and the second die transport mechanism 424 can be simplified. Furthermore, the number of inversions can be reduced, improving throughput. Moreover, the accuracy of the bonding position between the die CP and the substrate W can be improved.

[0074] The first die transfer mechanism 423 includes, for example, a first suction head 423a and a first drive unit 423b. The first suction head 423a is positioned below the die CP and suctions the bonding surface CPa of the die CP. The first suction head 423a is movable, for example, in the X-axis and Z-axis directions. The first drive unit 423b moves the first suction head 423a.

[0075] The first suction head 423a preferably adsorbs the bonding surface CPa of the die CP without contact. In other words, it is preferable that the first suction head 423a adsorbs the bonding surface CPa of the die CP while forming a gap between itself and the die CP. This prevents contamination of the bonding surface CPa of the die CP. The first suction head 423a is, for example, an ultrasonic type or a Bernoulli type. The ultrasonic type utilizes the squeeze effect by ultrasonic vibration, and the Bernoulli type utilizes the Bernoulli effect. The ultrasonic type can suppress horizontal displacement more effectively than the Bernoulli type. Details of the first suction head 423a will be described later.

[0076] The second die transfer mechanism 424 includes, for example, a second suction head 424a and a second drive unit 424b. The second suction head 424a is positioned above the die CP and adsorbs the back surface CPb of the die CP, which is facing away from the bonding surface CPa. Since it is not a problem if the back surface CPb becomes dirty, the second suction head 424a may come into contact with the die CP.

[0077] The second suction head 424a is movable, for example, in the X-axis direction, Y-axis direction, Z-axis direction, and θ direction. The θ direction is the circumferential direction of the vertical rotation centerline. In other words, the second suction head 424a may rotate about the vertical rotation centerline. The second drive unit 424b moves the second suction head 424a.

[0078] As shown in Figures 10 and 11, the bonding apparatus 42 may include a first moving part 428 and a second moving part 429. The first moving part 428 moves the die carrier holding part 421 in the horizontal direction. The first moving part 428 may also move the die carrier holding part 421 in the vertical direction. The second moving part 429 moves the substrate holding part 422 in the horizontal direction. The second moving part 429 may also move the substrate holding part 422 in the vertical direction.

[0079] According to this embodiment, the die carrier holding section 421 holds the second die carrier SC from above, and the substrate holding section 422 holds the substrate W from below. Therefore, it is possible to position the second die carrier SC and the substrate W at different heights. Consequently, it is possible to position the die carrier holding section 421 and the substrate holding section 422 at different heights. As a result, when the die carrier holding section 421 is viewed from above, the movement range of the die carrier holding section 421 and the movement range of the substrate holding section 422 can be made to overlap. This reduces the footprint of the bonding device 42.

[0080] The substrate holder 422 is movable in a horizontal first axis direction and in a horizontal second axis direction perpendicular to the first axis direction. The first axis direction is, for example, the X axis direction, and the second axis direction is, for example, the Y axis direction. The substrate holder 422 is movable in both the positive X direction and the negative X direction. Furthermore, the substrate holder 422 is movable in both the positive Y direction and the positive Y direction.

[0081] The die carrier holder 421 may be movable in both the first axial direction and the second axial direction, or it may be movable only in the second axial direction. In the latter case, when the die carrier holder 421 is viewed from above, the range of movement of the die carrier holder 421 and the range of movement of the substrate holder 422 may overlap in the first axial direction. In the latter case, the footprint of the bonding apparatus 42 can be made smaller compared to the former case.

[0082] As shown in Figures 10 and 11, the bonding device 42 may include a pressing mechanism 430. The pressing mechanism 430 presses the die CP downward relative to the second die carrier SC held by the die carrier holding section 421. The pressing mechanism 430 presses the die CP individually downward, separating the die CP individually from the second die carrier SC.

[0083] The pressing mechanism 430 separates the die CP from the second die carrier SC by, for example, supplying gas to the through-holes H1 of the conductive substrate SC1, or by inserting a pin (not shown) into the through-holes H1. The number and arrangement of the through-holes H1 are not particularly limited. The insulating film SC2 may or may not have through-holes.

[0084] In this embodiment, the die carrier holding section 421 holds the second die carrier SC, but as described above, it may also hold the first die carrier FC.

[0085] Furthermore, in this embodiment, the die carrier holding unit 421 holds the second die carrier SC from above with the bonding surfaces CPa of each of the multiple die CPs held by the second die carrier SC facing downwards, but is not limited to this. For example, the die carrier holding unit 421 may hold the second die carrier SC from below with the bonding surfaces CPa of each of the multiple die CPs held by the second die carrier SC facing upwards. In this case, the first die transport mechanism 423 receives the die CPs from the second die carrier SC and, during transport, inverts the die CPs so that the bonding surfaces CPa of the die CPs face downwards. The second die transport mechanism 424 receives the die CPs from the first die transport mechanism 423 and bonds the die CPs to the substrate W with the bonding surfaces CPa of the die CPs facing downwards.

[0086] [First suction head] (Example 1) Referring to Figures 12 and 13, a first suction head 110 according to a first example used as the first suction head 423a will be described. Figure 12 is a cross-sectional view showing the first suction head 110 according to a first example. Figure 13 is a plan view showing the first suction head 110 according to a first example. Figure 12 is a cross-sectional view taken along the line AA in Figure 13.

[0087] The first suction head 110 comprises a head body 111, a first vibration generating unit 112, a second vibration generating unit 113, and a suction force generating unit 114.

[0088] The head body 111 has a holding surface 111a and a protrusion 111b. The holding surface 111a holds the die CP without contact. In a plan view from a direction perpendicular to the holding surface 111a (hereinafter simply referred to as "plan view"), the holding surface 111a is, for example, circular. The holding surface 111a may be a polygon such as a rectangle in a plan view. The protrusion 111b is provided on the surface of the holding surface 111a facing the die CP. In a plan view, the outer shape of the protrusion 111b may be smaller than the outer shape of the die CP. In this case, if the die CP, which is held without contact by the holding surface 111a, is tilted with respect to the horizontal plane, contact between the outer end of the die CP and the holding surface 111a can be suppressed. The height of the protrusion 111b is, for example, 100 μm. The protrusion 111b is, for example, circular in a plan view. The protrusion 111b may be a polygon such as a rectangle in a plan view.

[0089] The first vibration generating unit 112 applies an ultrasonic vibration V1 of a first amplitude to the holding surface 111a. The first vibration generating unit 112 includes a first piezoelectric element 112a and a first power supply 112b.

[0090] The first piezoelectric element 112a is provided inside the head body 111. In a plan view, the first piezoelectric element 112a is provided at the center of the holding surface 111a. The first piezoelectric element 112a generates ultrasonic vibration V1 when a first voltage is applied from the first power supply 112b. In a plan view, the outer shape of the first piezoelectric element 112a may be smaller than the outer shape of the die CP. In a plan view, the first piezoelectric element 112a has, for example, an annular shape. The first piezoelectric element 112a has a structure in which a piezoelectric material such as lead zirconate titanate (PZT) is sandwiched between electrodes.

[0091] The first power supply 112b applies a first voltage to the first piezoelectric element 112a. The value of the first voltage is controlled by the control device 9. The control device 9 adjusts the first amplitude, for example, by controlling the value of the first voltage. The larger the value of the first voltage, the larger the first amplitude. The first amplitude can be determined based on the size, weight, etc., of the die CP held by the holding surface 111a.

[0092] The second vibration generating unit 113 applies an ultrasonic vibration V2 of a second amplitude to the holding surface 111a. The second amplitude is greater than the first amplitude. The second vibration generating unit 113 includes a second piezoelectric element 113a and a second power supply 113b.

[0093] The second piezoelectric element 113a is provided inside the head body 111. In a plan view, the second piezoelectric element 113a is provided around the first piezoelectric element 112a. In a plan view, the second piezoelectric element 113a is provided on the outer circumference of the holding surface 111a. The second piezoelectric element 113a generates ultrasonic vibration V2 when a second voltage is applied from the second power supply 113b. In a plan view, at least a part of the outer shape of the second piezoelectric element 113a may be larger than the outer shape of the die CP. In a plan view, the second piezoelectric element 113a has, for example, an annular shape. The second piezoelectric element 113a may be provided coaxially with the first piezoelectric element 112a. In a plan view, the center of the second piezoelectric element 113a may coincide with the center of the first piezoelectric element 112a. The second piezoelectric element 113a has a structure in which a piezoelectric material such as a PZT is sandwiched between electrodes.

[0094] The second power supply 113b applies a second voltage to the second piezoelectric element 113a. The value of the second voltage is controlled by the control device 9. The control device 9 adjusts the second amplitude, for example, by controlling the value of the second voltage. The larger the value of the second voltage, the larger the second amplitude. The second amplitude can be determined based on the size, weight, etc., of the die CP held by the holding surface 111a. The control device 9 controls the first power supply 112b and the second power supply 113b, for example, to apply a first voltage to the first piezoelectric element 112a and simultaneously apply a second voltage to the second piezoelectric element 113a.

[0095] When a first voltage is applied from the first power supply 112b to the first piezoelectric element 112a, the first piezoelectric element 112a generates ultrasonic vibrations V1. The ultrasonic vibrations V1 generated by the first piezoelectric element 112a cause the holding surface 111a to vibrate ultrasonically. As the holding surface 111a vibrates ultrasonically, a squeeze effect occurs between the holding surface 111a and the bonding surface CPa of the die CP that is adjacent to and facing the holding surface 111a. The squeeze effect generates a force that lifts the die CP away from the holding surface 111a (hereinafter referred to as "levitation force"). The die CP is held by the holding surface 111a while separated from the holding surface 111a by the levitation force.

[0096] When a second voltage is applied to the second piezoelectric element 113a from the second power supply 113b, the second piezoelectric element 113a generates ultrasonic vibrations V2. The ultrasonic vibrations V2 generated by the second piezoelectric element 113a cause the holding surface 111a to vibrate ultrasonically. As the holding surface 111a vibrates ultrasonically, a squeeze effect occurs between the holding surface 111a and the bonding surface CPa of the die CP that is adjacent to and facing the holding surface 111a. A buoyant force is generated by the squeeze effect. The die CP is held by the holding surface 111a while being separated from the holding surface 111a by the buoyant force.

[0097] The buoyancy force increases with increasing amplitude of ultrasonic vibration. In this embodiment, the second amplitude is greater than the first amplitude. In this case, the buoyancy force at the outer periphery of the holding surface 111a is greater than the buoyancy force at the center of the holding surface 111a. Therefore, with respect to the die CP, the holding surface 111a functions like an inclined surface that slopes upward from the center to the outer periphery. As a result, when the die CP, which is held non-contact at the center of the holding surface 111a, moves toward the outer periphery of the holding surface 111a, the outer periphery of the die CP tilts upward relative to the center, causing the die CP to move toward the center of the holding surface 111a. In this way, the second vibration generating unit 113 generates a force that attempts to return the die CP, which is trying to move from the center to the outer periphery of the holding surface 111a, back to the center of the holding surface 111a. As a result, the horizontal displacement of the die CP is automatically corrected. That is, displacement when holding the die CP non-contact can be suppressed.

[0098] The suction force generating unit 114 applies a force that sucks the die CP toward the holding surface 111a. The suction force generating unit 114 includes a suction path 114a and a vacuum source 114b.

[0099] The suction path 114a penetrates the head body 111 in the vertical direction. The suction path 114a communicates with the vacuum source 114b. The suction path 114a applies negative pressure to the holding surface 111a to suck in the die CP. The suction path 114a also sucks in dust that may be generated by ultrasonic vibration of the holding surface 111a. The suction path 114a is provided, for example, at the center of the holding surface 111a. In this case, the die CP can be sucked in regardless of the size of the die CP held by the holding surface 111a. Multiple suction paths 114a (for example, four) may be provided between the first piezoelectric element 112a and the second piezoelectric element 113a, spaced apart from each other along the circumferential direction. In this case, rotation of the die CP held non-contact with the holding surface 111a can be prevented.

[0100] The vacuum source 114b generates negative pressure. The vacuum source 114b includes, for example, an air pump. The vacuum source 114b communicates with the suction path 114a. When the vacuum source 114b is driven, negative pressure acts on the suction path 114a, generating a suction force that attracts the die CP to the holding surface 111a.

[0101] The suction force generating unit 114 may be a Bernoulli type that utilizes the Bernoulli effect. Also, as shown in Figure 12, when the first suction head 110 is used with the holding surface 111a facing upward, the suction force generating unit 114 does not need to be provided. On the other hand, as shown in Figure 14, when the first suction head 110 is used with the holding surface 111a facing downward, the suction force generating unit 114 is provided to prevent the die CP held by the holding surface 111a from falling. For example, when the die carrier holding unit 421 holds the second die carrier SC from below with the bonding surfaces CPa of each die CP held by the second die carrier SC facing upward, the first suction head 110 is used with the holding surface 111a facing downward.

[0102] (Example 2) Referring to Figure 15, a second example of the first adsorption head 120 used as the first adsorption head 423a will be described. Figure 15 is a plan view showing the first adsorption head 120 according to the second example.

[0103] The first suction head 120 differs from the first suction head 110 in that the first piezoelectric element 112a and the second piezoelectric element 113a are each rectangular in shape when viewed from above. Other configurations are the same as those of the first suction head 110. Similar to the first suction head 110, the first suction head 120 can also suppress positional displacement when holding the die CP in a non-contact manner.

[0104] In the example shown in Figure 15, the holding surface 111a is circular in plan view, but for example, the holding surface 111a may be rectangular in shape in plan view, similar to the first piezoelectric element 112a and the second piezoelectric element 113a.

[0105] (Example 3) Referring to Figures 16 and 17, a third example of the first adsorption head 130 used as the first adsorption head 423a will be described. Figures 16 and 17 are cross-sectional views showing the first adsorption head 130 according to the third example.

[0106] The first suction head 130 differs from the first suction head 110 in that it has a configuration having three vibration generating units (first vibration generating unit 112, second vibration generating unit 113, and third vibration generating unit 115). Other configurations are the same as the first suction head 110. The following description will focus on the configurations that differ from the first suction head 110.

[0107] The first suction head 130 comprises a head body 111, a first vibration generating unit 112, a second vibration generating unit 113, a suction force generating unit 114, and a third vibration generating unit 115.

[0108] The third vibration generating unit 115 applies an ultrasonic vibration V3 of a third amplitude to the holding surface 111a. The third amplitude is greater than the second amplitude. The third vibration generating unit 115 includes a third piezoelectric element 115a and a third power supply 115b.

[0109] The third piezoelectric element 115a is provided inside the head body 111. In a plan view, the third piezoelectric element 115a is provided around the second piezoelectric element 113a. In a plan view, the third piezoelectric element 115a is provided on the outer circumference of the holding surface 111a. The third piezoelectric element 115a generates ultrasonic vibration V3 when a third voltage is applied from the third power supply 115b. In a plan view, the third piezoelectric element 115a has, for example, an annular shape. The third piezoelectric element 115a may be provided coaxially with the first piezoelectric element 112a and the second piezoelectric element 113a. In a plan view, the center of the third piezoelectric element 115a may coincide with the center of the first piezoelectric element 112a and the center of the second piezoelectric element 113a. The third piezoelectric element 115a has a structure in which a piezoelectric material such as a PZT is sandwiched between electrodes.

[0110] The third power supply 115b applies a third voltage to the third piezoelectric element 115a. The value of the third voltage is controlled by the control device 9. The control device 9 adjusts the third amplitude, for example, by controlling the value of the third voltage. The larger the value of the third voltage, the larger the third amplitude.

[0111] When a third voltage is applied from the third power supply 115b to the third piezoelectric element 115a, the third piezoelectric element 115a generates ultrasonic vibrations V3. The ultrasonic vibrations V3 generated by the third piezoelectric element 115a cause the holding surface 111a to vibrate ultrasonically. As the holding surface 111a vibrates ultrasonically, a squeeze effect occurs between the holding surface 111a and the bonding surface CPa of the die CP that is adjacent to and facing the holding surface 111a. A buoyant force is generated by the squeeze effect. The die CP is held by the holding surface 111a while being separated from the holding surface 111a by the buoyant force.

[0112] For example, consider the case shown in Figure 16, where in a plan view, the outer shape of the die CP is larger than the outer shape of the second piezoelectric element 113a and smaller than the outer shape of the third piezoelectric element 115a. In this case, the control device 9 controls the values ​​of the first, second, and third voltages so that the third amplitude is larger than the first and second amplitudes. As a result, the buoyancy force at the outer periphery of the holding surface 111a becomes greater than the buoyancy force at the center of the holding surface 111a. Therefore, with respect to the die CP, the holding surface 111a functions like an inclined surface that slopes upward from the center to the outer periphery. As a result, when the die CP, which is held non-contactingly at the center of the holding surface 111a, moves toward the outer periphery of the holding surface 111a, the outer periphery of the die CP tilts upward relative to the center, causing the die CP to move toward the center of the holding surface 111a. In this way, the third vibration generating unit 115 generates a force that tries to return the die CP, which is trying to move from the center to the outer periphery of the holding surface 111a, back to the center of the holding surface 111a. As a result, the horizontal misalignment of the die CP is automatically corrected. In other words, misalignment when holding the die CP without contact can be suppressed. Note that the first and second amplitudes may be the same, or the second amplitude may be larger than the first amplitude.

[0113] For example, consider the case shown in Figure 17 where, in a plan view, the outer shape of the die CP is larger than the outer shape of the first piezoelectric element 112a and smaller than the outer shape of the second piezoelectric element 113a. In this case, the control device 9 controls the values ​​of the first and second voltages so that the second amplitude is larger than the first amplitude. As a result, the buoyancy force in the intermediate part between the center and the outer periphery of the holding surface 111a becomes greater than the buoyancy force at the center of the holding surface 111a. Therefore, with respect to the die CP, the holding surface 111a functions like an inclined surface that slopes upward from the center to the intermediate part. As a result, when the die CP, which is held non-contacting the center of the holding surface 111a, moves toward the outer periphery of the holding surface 111a, the outer periphery of the die CP tilts upward relative to the center, causing the die CP to move toward the center of the holding surface 111a. In this way, the second vibration generating unit 113 generates a force that tries to return the die CP, which is trying to move from the center to the outer periphery of the holding surface 111a, back to the center of the holding surface 111a. As a result, the horizontal misalignment of the die CP is automatically corrected. In other words, misalignment when holding the die CP in a non-contact manner can be suppressed. The control device 9 does not need to apply a third voltage to the third piezoelectric element 115a, or it may apply a third voltage to the third piezoelectric element 115a.

[0114] In the above embodiment, the die CP is an example of a thin plate, and the first suction heads 423a, 110, 120, 130 and the control device 9 are examples of a holding device.

[0115] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

[0116] In the above embodiment, the case in which the first vibration generating unit 112 has a first piezoelectric element 112a has been described, but the disclosure is not limited thereto. For example, instead of the first piezoelectric element 112a, a bolt-fastened Langevin type vibrator may be used in which a PZT is sandwiched between metal blocks and tightened with screws (or bolts) to apply pressure. The second vibration generating unit 113 and the third vibration generating unit 115 are the same as the first vibration generating unit 112.

[0117] In the embodiments described above, the first suction head 423a is described as having two or three vibration generating units arranged coaxially, but the disclosure is not limited thereto. For example, the first suction head 423a may have four or more vibration generating units arranged coaxially.

[0118] In this disclosure, the control device 9 is an electronic circuit such as a CPU (Central Processing Unit), FPGA (Field Programmable Gate Array), or ASIC (Application Specific Integrated Circuit), which performs various control operations described in this specification by executing instruction codes stored in memory or by designing the circuit for special applications.

[0119] This international application claims priority based on Japanese Patent Application No. 2023-112374, filed on 7 July 2023, and the entire contents of said application are incorporated herein by reference. [Explanation of Symbols]

[0120] 423a, 110, 120, 130 First suction head 111a Holding surface 112 First vibration generation unit 113 Second vibration generation section CP Die

Claims

1. A holding surface that holds a thin plate without contact, A first vibration generating unit that applies ultrasonic vibration of a first amplitude to the holding surface, A second vibration generating unit is provided around the first vibration generating unit and applies ultrasonic vibrations with a second amplitude greater than the first amplitude to the holding surface, A holding device equipped with the following features.

2. In a plan view from a direction perpendicular to the holding surface, The outer shape of the first vibration generating part is smaller than the outer shape of the thin plate. At least a portion of the outer shape of the second vibration generating section is larger than the outer shape of the thin plate. The holding device according to claim 1.

3. The second vibration generating unit is provided coaxially with the first vibration generating unit. The holding device according to claim 1.

4. The system further includes a suction force generating unit that applies a force to the thin plate toward the holding surface. The holding device according to claim 1.

5. In a plan view from a direction perpendicular to the holding surface, the suction force generating unit is located at the center of the holding surface. The holding device according to claim 4.

6. A protrusion is provided on the surface of the retaining surface that faces the thin plate. The holding device according to claim 1.

7. In a plan view from a direction perpendicular to the holding surface, the outer shape of the protrusion is smaller than the outer shape of the thin plate. The holding device according to claim 6.

8. The aforementioned thin plate is a die. The holding device according to any one of claims 1 to 7.

9. The first vibration generating unit includes a first piezoelectric element that generates ultrasonic vibrations when a first voltage is applied, The second vibration generating unit includes a second piezoelectric element that generates ultrasonic vibrations when a second voltage is applied. The system further comprises a control circuit for controlling the first vibration generating unit and the second vibration generating unit, The control circuit controls the value of the second voltage to be greater than the value of the first voltage. The holding device according to claim 1.

10. The control circuit controls the application of the first voltage to the first piezoelectric element and the application of the second voltage to the second piezoelectric element simultaneously. The holding device according to claim 9.

11. The device further comprises a third vibration generating unit provided around the second vibration generating unit, which applies ultrasonic vibrations with a third amplitude greater than the second amplitude to the holding surface. The holding device according to claim 1.

12. A die carrier holding section that holds a die carrier in which multiple dies are held, A substrate holding section that holds the substrate to which the plurality of dies are joined, A holding device that receives and transports the plurality of dies held in the die carrier, Equipped with, The holding device is A holding surface that holds the die in a non-contact manner, A first vibration generating unit that applies ultrasonic vibration of a first amplitude to the holding surface, A second vibration generating unit is provided around the first vibration generating unit and applies ultrasonic vibrations with a second amplitude greater than the first amplitude to the holding surface, Equipped with, Bonding equipment.

13. A holding method for holding a thin plate without contact using a holding surface, The first vibration generating unit applies ultrasonic vibrations of a first amplitude to the holding surface, The second vibration generating unit, which is provided around the first vibration generating unit, applies ultrasonic vibrations with a second amplitude greater than the first amplitude to the holding surface, A holding method having

14. The application of the second amplitude ultrasonic vibration is performed simultaneously with the application of the first amplitude ultrasonic vibration. The holding method according to claim 13.

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