Power semiconductor modules and power converters

Abstract

This power semiconductor module comprises: a power semiconductor element that switches conduction and non-conduction between a first electrode and a second electrode in response to a control signal supplied to a control electrode; a heat radiation plate that can radiate heat from the power semiconductor element; first and second electric power lines through which electric power is transmitted between the first electrode and the second electrode; a first control line through which the control signal is supplied to the control electrode; and a second control line through which a reference potential of the control signal is supplied. The heat radiation plate includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. The heat radiation plate has at least one through-hole which penetrates through the front surface and the back surface thereof. Only the first and second control lines, among the first and second electric power lines and the first and second control lines, pass through the through-hole to be drawn out to a region on the back surface of the heat radiation plate.

Description

Technical Field

[0001] The present disclosure relates to a power semiconductor module and a power conversion device.

Background Art

[0002] Patent Documents 1 to 8 disclose technologies related to power semiconductor modules used in power conversion devices and the like. For example, Patent Document 1 discloses module elements constituting an inverter bridge. In this module element, a transistor pellet is housed inside a container composed of a copper base and a cover. The transistor pellet is placed on the copper base via an insulating layer ceramics and a copper material. Collector terminals, emitter terminals, and gate terminals are electrically connected to the collector electrode, emitter electrode, and gate electrode of the transistor pellet via wire bonding or the like, respectively. These terminals are both drawn out from the upper cover to the outside of the container.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

Patent Document 8

Summary of the Invention

[0004] The output voltage required for power conversion devices as described above is constantly increasing. As the output voltage increases, the voltage applied to the collector and source electrodes of the module elements also increases. As a result, the radiated noise (electromagnetic noise) emitted from wires and other components connected to the collector and source electrodes also increases. On the other hand, the gate voltage input to the gate electrode is extremely low compared to the high voltage applied to the collector and source electrodes. Therefore, if large amounts of radiated noise from the wires and other components of the collector and source electrodes propagate to the gate electrode, the gate voltage can fluctuate significantly due to the influence of the radiated noise. Such fluctuations in gate voltage may lead to malfunctions, such as the malfunction of the module elements.

[0005] This disclosure describes a power semiconductor module and a power converter that can suppress the occurrence of malfunctions caused by radiated noise. [Means for solving the problem]

[0006] A power semiconductor module according to one embodiment of the present disclosure includes a power semiconductor element having a first electrode, a second electrode, and a control electrode, which alternately switches between conductivity and non-conductivity between the first electrode and the second electrode in accordance with a control signal applied to the control electrode; a heat sink having a surface on which the power semiconductor element is installed and a back surface opposite to the surface, capable of dissipating heat from the power semiconductor element; a first power line section and a second power line section electrically connected to the first electrode and the second electrode, respectively, and transmitting power between the first electrode and the second electrode; a first control line section electrically connected to the control electrode and providing a control signal to the control electrode; and a second control line section electrically connected to the second electrode and providing a reference potential for the control signal. The heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. The heat sink has at least one through hole penetrating between the surface and the back surface. Of the first power line section, the second power line section, the first control line section, and the second control line section, only the first and second control line sections are led through the through hole to a region on the back surface of the heat sink. [Effects of the Invention]

[0007] According to this disclosure, a power semiconductor module and a power converter are provided that can suppress the occurrence of malfunctions caused by radiated noise. [Brief explanation of the drawing]

[0008] [Figure 1] Figure 1 is a circuit diagram showing a power converter equipped with a power converter according to one embodiment. [Figure 2] Figure 2 is a cross-sectional view showing the power semiconductor module of the power converter shown in Figure 1. [Figure 3] Figure 3 is a plan view of the power semiconductor elements of the power semiconductor module shown in Figure 2, viewed from above. [Figure 4] Figure 4 is a simplified cross-sectional view of a comparative example power semiconductor module. [Figure 5] Figure 5 is a simplified cross-sectional view of the power semiconductor module shown in Figure 2. [Figure 6] Figure 6 is a cross-sectional view showing a power semiconductor module of the modified example 1. [Figure 7] Figure 7 is a simplified cross-sectional view showing the power semiconductor module of the modified example 2. [Figure 8] Figure 8 is a plan view of the power semiconductor device shown in Figure 7, viewed from above. [Figure 9] Figure 9 is a simplified cross-sectional view showing the power semiconductor module of the modified example 3. [Figure 10] Figure 10 is a simplified cross-sectional view showing the power semiconductor module of the modified example 4. [Figure 11] Figure 11 is a simplified cross-sectional view showing the power semiconductor module of Modification 5. [Figure 12] Figure 12 is a simplified cross-sectional view showing a power semiconductor module of the modified example 6. [Modes for carrying out the invention]

[0009] A power semiconductor module according to one embodiment of the present disclosure includes a power semiconductor element having a first electrode, a second electrode, and a control electrode, which alternately switches between conductivity and non-conductivity between the first electrode and the second electrode in accordance with a control signal applied to the control electrode; a heat sink having a surface on which the power semiconductor element is installed and a back surface opposite to the surface, capable of dissipating heat from the power semiconductor element; a first power line section and a second power line section electrically connected to the first electrode and the second electrode, respectively, and transmitting power between the first electrode and the second electrode; a first control line section electrically connected to the control electrode and providing a control signal to the control electrode; and a second control line section electrically connected to the second electrode and providing a reference potential for the control signal. The heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetism. The heat sink has at least one through hole penetrating between the surface and the back surface. Of the first power line section, the second power line section, the first control line section, and the second control line section, only the first and second control line sections are led through the through hole to a region on the back surface of the heat sink.

[0010] In the above power semiconductor module, conduction and non-conduction between the first electrode and the second electrode are alternately switched according to a control signal input to the control electrode. A large power is applied to the first electrode and the second electrode in the conduction state. Along with this, a large amount of radiation noise is radiated from the first electrode and the second electrode. In the above power semiconductor module, only the first control line part and the second control line part among the first power line part, the second power line part, the first control line part, and the second control line part are drawn out to a region on the back surface of the heat sink through at least one through hole of the heat sink. Further, the heat sink includes a shielding layer formed of a material having at least one of electrical conductivity and magnetism. Therefore, it is possible to shield the radiation noise radiated from the first power line part and the second power line part by the heat sink. Therefore, in the above power semiconductor module, the first power line part and the second power line part in the region on the surface of the heat sink and the first control line part and the second control line part in the region on the back surface of the heat sink are separated by the heat sink. Therefore, propagation of radiation noise through the heat sink from the first power line part and the second power line part to the first control line part and the second control line part is suppressed. Thus, by using the heat sink as a shielding plate for shielding radiation noise, it is possible to suppress propagation of a large amount of radiation noise from the first power line part and the second power line part to the first control line part and the second control line part. Thereby, it is possible to suppress a large fluctuation of the control signal due to the influence of the radiation noise. As a result, it is possible to suppress the occurrence of operation failures such as malfunction of the power semiconductor element due to the fluctuation of the control signal.

[0011] In some aspects, the first control line part may have a first monotonically increasing region that extends from a cross section with the through hole and in which the distance between the first power line part and the second power line part monotonically increases in a direction from the control electrode toward the through hole. The second control line part may have a second monotonically increasing region that extends from a cross section with the through hole and in which the distance between the first power line part and the second power line part monotonically increases in a direction from the second electrode toward the through hole.

[0012] In some embodiments, the power semiconductor module may include a cover that covers the surface of the heat sink on which the power semiconductor device is mounted. The first power line portion and the second power line portion may extend from the first electrode and the second electrode toward the cover, and may be drawn out to the outside of the region covered by the cover through the cover. The cover may have a side wall portion and a top plate facing the surface with the side wall portion interposed therebetween. The first power line portion and the second power line portion may extend from the first electrode and the second electrode toward the top plate, and may be drawn out to the outside of the region covered by the cover through the top plate. In such a configuration, the first control line portion and the second control line portion can be drawn out on the opposite side to the first power line portion and the second power line portion, so that the propagation of radiated noise from the first power line portion and the second power line portion to the first control line portion and the second control line portion can be more effectively suppressed.

[0013] In some embodiments, the first electrode may be arranged to face the surface. The second electrode and the control electrode may be arranged on the opposite side to the surface with the first electrode interposed therebetween. At least one through hole may be formed at a position that does not overlap with the second electrode and the control electrode in a plan view of the heat sink. In this case, a configuration in which the first control line portion and the second control line portion are drawn out through the through hole to a region on the back surface of the heat sink can be easily realized.

[0014] In some embodiments, the second electrode and the control electrode may be arranged to face the surface. The first electrode may be arranged on the opposite side to the surface with the second electrode and the control electrode interposed therebetween. At least one through hole may be formed at a position that overlaps with the second electrode and the control electrode in a plan view of the heat sink. In this case, the distance from the gate electrode and the source electrode to the through hole can be made as short as possible, so that the portion of the first control line portion and the second control line portion exposed inside the housing where radiated noise can propagate can be made as small as possible. Thereby, the risk that radiated noise propagates to the first control line portion and the second control line portion inside the housing can be reduced.

[0015] In some embodiments, the heat sink may have a single through-hole. The first control line section and the second control line section may be led through the single through-hole to an area on the back surface. When the first and second control line sections are passed together through a single through-hole in this way, the distance between the first and second control line sections becomes shorter, and accordingly, the area of ​​the loop formed by the first and second control line sections becomes smaller. By reducing the loop area in this way, the electromotive force generated when electromagnetic waves (radiated noise) link with the loop can be reduced. This reduces the risk of large conducted noise being generated in the first and second control line sections.

[0016] In some embodiments, the first and second control line sections may be twisted together and led through a single through-hole to a region on the back surface. In this case, even if radiated noise from the first and second power line sections propagates to the first and second control line sections, the conducted noise generated in the first and second control line sections and the conducted noise generated in the twisted portion beyond them will cancel each other out. Therefore, the risk of large amounts of conducted noise being generated in the first and second control line sections can be reduced.

[0017] In some embodiments, the power semiconductor module may further include a cylindrical electromagnetic shield comprising a shielding layer made of a material having at least one of electrical conductivity and magnetic properties, positioned between the second electrode and the control electrode and the opening of a through hole on the surface, so as to surround the first control line section and the second control line section. In this case, since the electromagnetic shield can block radiated noise from the first power line section and the second power line section, the propagation of radiated noise to the first control line section and the second control line section inside the electromagnetic shield can be suppressed.

[0018] In some embodiments, the first and second control line sections may include a common-mode filter or transformer capable of removing the common-mode component of conducted noise transmitted through the first and second control line sections. The common-mode filter or transformer may be located inside a through-hole. In this case, the common-mode component of conducted noise that may occur in the first and second control line sections can be removed, thereby suppressing fluctuations in the control signal caused by such common-mode components. Furthermore, by arranging the common-mode filter or transformer inside a through-hole in the heat sink, the propagation of radiated noise from the first and second power line sections to the first and second control line sections via the common-mode filter or transformer can be suppressed.

[0019] In some embodiments, the heat sink may have first and second through-holes formed at different locations on its surface as through-holes. The first control line section may be routed through the first through-hole to a region on the back surface. The second control line section may be routed through the second through-hole to a region on the back surface. In this case, the first and second control line sections can reach the first and second through-holes, respectively, by the shortest distance. This minimizes the portion of the first and second control line sections exposed to the inside of the enclosure where radiated noise can propagate, thereby reducing the risk of radiated noise propagating to the first and second control line sections inside the enclosure.

[0020] A power conversion device according to one embodiment of the present disclosure comprises a power conversion unit that has any of the above-described power semiconductor modules and converts from a first mode of power provided by a power source to a second mode of power requested by a load device, and a control unit that transmits a control signal to the power semiconductor module. Since the power conversion device has any of the above-described power semiconductor modules, as described above, it can suppress the occurrence of malfunctions such as malfunctions of power semiconductor elements caused by fluctuations in the control signal.

[0021] The semiconductor unit and power converter of this disclosure will be described in detail below with reference to the attached drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant descriptions are omitted.

[0022] The power converter 1 shown in Figure 1 converts power received from power source B into power required by load device M. Power source B outputs, for example, DC power. Power source B has a positive terminal B1 and a negative terminal B2. Load device M is, for example, a three-phase AC motor. The three-phase AC motor may be used as a power source to rotate an impeller. The power converter 1 may be used as an electrical component such as an electric compressor or electric blower. The electric compressor may be mounted on a moving object such as a vehicle.

[0023] The power converter 1 of this embodiment converts DC power to AC power. In other words, in this embodiment, DC power is exemplified as the first form of power, and AC power is exemplified as the second form of power. The power converter 1 may be an inverter in the narrow sense. The power converter 1 may also convert AC power to DC power. In other words, the power converter 1 may be a converter. The power converter 1 may also convert DC power of the first form to DC power of the second form.

[0024] The power converter 1 has a positive terminal A1 and a negative terminal A2 as input terminals. The positive terminal A1 is connected to the power supply positive terminal B1. The negative terminal A2 is connected to the power supply negative terminal B2. The power converter 1 also has output terminals D1, D2, and D3 as output terminals. These output terminals D1, D2, and D3 are connected to the load device M. For example, output terminals D1, D2, and D3 correspond to the U phase, V phase, and W phase of a three-phase AC motor, respectively.

[0025] The power converter 1 has, as electrical components, a capacitor C and a switch circuit 2 (power conversion unit). Capacitor C is connected between the power supply B and the load device M. Capacitor C is, for example, a DC capacitor. The positive terminal C1 of capacitor C is connected to the positive terminal B1 of the power supply. The negative terminal C2 of capacitor C is connected to the negative terminal B2 of the power supply. The switch circuit 2 is connected between capacitor C and the load device M. The switch circuit 2 converts DC power into pseudo AC power. The switch circuit 2 includes power semiconductor elements 10A to 10F as switches and connection points P1 to P9.

[0026] Connection points P1, P4, and P7 are connected to the positive terminal C1 of capacitor C. Connection points P3, P6, and P9 are connected to the negative terminal C2 of capacitor C. Connection points P2, P5, and P8 are connected to the output terminals D1, D2, and D3, respectively. Power semiconductor element 10A is connected to connection points P1 and P2. Power semiconductor element 10B is connected to connection points P2 and P3. Connection points P1, P2, P3, and power semiconductor elements 10A and 10B constitute the first leg. Similarly, connection points P4, P5, P6, and power semiconductor elements 10C and 10D constitute the second leg. Connection points P7, P8, P9, and power semiconductor elements 10E and 10F constitute the third leg.

[0027] Each of the power semiconductor elements 10A to 10F is a semiconductor switch, such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). The power semiconductor elements 10A to 10F are electrically connected to the control board 3 (control unit). The power semiconductor elements 10A to 10F are switched on or off according to the control signal E1 output from the control board 3. The control board 3 is composed of a computer, such as a CPU, ROM, and RAM. Hereafter, when describing the power semiconductor elements 10A to 10F without distinguishing between them, each of the power semiconductor elements 10A to 10F will simply be referred to as "power semiconductor element 10".

[0028] As shown in Figure 2, the power semiconductor element 10 is housed inside the housing 20. The power semiconductor element 10 and the housing 20 constitute the power semiconductor module 5. In this embodiment, we illustrate a case where all six power semiconductor elements 10A to 10F are housed in one housing 20. However, for example, one power semiconductor element may be housed in each of the six housings (i.e., one power semiconductor element may be housed in one housing). There may also be a configuration where two power semiconductor elements are housed in each of the three housings (i.e., two power semiconductor elements are housed in one housing), or other configurations. As shown in Figure 2, the housing 20 has a heat sink 21 on which the power semiconductor element 10 is installed, and a cover 22 that covers the power semiconductor element 10. The heat sink 21 is a plate-shaped member made of a thermally conductive material capable of dissipating heat from the power semiconductor element 10. The material having thermal conductivity capable of dissipating heat from the power semiconductor element 10 may be, for example, a material having low thermal resistance that allows heat from the power semiconductor element 10 to be transferred to other components. The heat sink 21 is, for example, a metal plate made of a metallic material such as copper.

[0029] Such metallic materials possess conductivity (i.e., electrical conductivity) that can shield against radiated noise. Therefore, the heat sink 21 also functions as a shielding plate that shields against radiated noise. Radiated noise is electromagnetic noise that propagates through space as electric and magnetic fields alternately intertwine. Radiated noise is generated, for example, in conjunction with the switching operation of the power semiconductor element 10. The fact that the heat sink 21 can shield against radiated noise means that the heat sink 21 has the function of blocking or suppressing the passage of radiated noise through the heat sink 21. Thus, the heat sink 21 has thermal conductivity that can dissipate heat from the power semiconductor element 10, and conductivity that can shield against radiated noise. In this way, the entire heat sink 21 is configured as a shielding layer that can shield against radiated noise. However, the entire heat sink 21 does not need to be composed of a shielding layer. The heat sink 21 may be configured to include a shielding layer in part. The shielding layer may be composed of a thin plate, mesh, or other known shielding structure made of a material that shields against radiated noise. For example, the heat sink 21 may have a configuration in which a metal layer is laminated (e.g., plated) as a shielding layer on an electrically insulating layer. That is, the heat sink 21 may have an insulating layer and a metal layer (i.e., a shielding layer) laminated on the insulating layer. Materials capable of shielding radiated noise include not only conductive materials but also magnetic materials. Therefore, the heat sink 21 may be made of a magnetic material instead of a conductive material, or it may be made of a material that includes both conductivity and magnetism. Even with such a configuration, the heat sink 21 can shield radiated noise.

[0030] The heat sink 21 includes a surface 21a on which the power semiconductor element 10 is installed, a back surface 21b opposite to the surface 21a, and a through hole 21c that penetrates from the surface 21a to the back surface 21b. The surface 21a and the back surface 21b may be, for example, planes parallel to each other. The installation of the power semiconductor element 10 on the surface 21a includes not only cases where the power semiconductor element 10 is directly fixed to the surface 21a, but also cases where the power semiconductor element 10 is indirectly fixed to the surface 21a via other members. In this embodiment, the power semiconductor element 10 is indirectly fixed to the surface 21a via an insulating layer 31 and a conductive layer 32. Hereinafter, the direction from the surface 21a toward the back surface 21b will be referred to as "down," and the direction from the back surface 21b toward the surface 21a will be referred to as "up." Viewing the surface 21a of the heat sink 21 from above will be referred to as a "plan view."

[0031] The insulating layer 31 is, for example, a flat ceramic layer with high thermal conductivity. The insulating layer 31 includes a back surface 31b facing the surface 21a and a surface 31a facing away from the surface 21a. The conductive layer 32 is, for example, a flat copper plate and is placed on the surface 31a of the insulating layer 31. Conductive layers 33 and 34 are placed on both sides of the conductive layer 32 on the surface 31a. Conductive layers 33 and 34 may each be, for example, flat copper plates. Conductive layers 33 and 34 are spaced apart from conductive layer 32 and are electrically insulated from conductive layer 32. Conductive layer 34 may be integrated with conductive layer 32 without being spaced apart. In this case, it becomes possible to omit the wire 41a for connecting conductive layer 32 and conductive layer 34.

[0032] Through holes 21c and 31c are formed in the heat sink 21 and the insulating layer 31, respectively. The through hole 31c penetrates the insulating layer 31 from the surface 31a exposed between the conductive layer 32 and the conductive layer 33 to the back surface 31b. The through hole 21c penetrates the heat sink 21 from the surface 21a to the back surface 21b at a position communicating vertically with the through hole 31c. The through holes 21c and 31c are sized to allow the first control line section 43 and the second control line section 44, which will be described later, to be inserted together. In this embodiment, the inner diameter of the through holes 21c and 31c is, for example, about 1.5 to 30 times the combined cross-sectional area of ​​the first control line section 43 and the second control line section 44. In this disclosure, since the through holes 21c and 31c constitute a single through hole that communicates with each other, the through holes 21c and 31c may be collectively referred to as "through hole H10".

[0033] The power semiconductor element 10 has a drain electrode 11 (first electrode), a source electrode 12 (second electrode), and a gate electrode 13 (control electrode) that are electrically insulated from each other. The source electrode 12 and the gate electrode 13 are located, for example, on the opposite side of the power semiconductor element 10 from the drain electrode 11. The arrangement of the source electrode 12, the gate electrode 13, and the drain electrode 11 is not limited to this configuration and can be changed as appropriate. In this embodiment, the power semiconductor element 10 is arranged on the conductive layer 32 such that the drain electrode 11 faces the surface 21a. The drain electrode 11 facing the surface 21a includes not only the case where the drain electrode 11 directly faces the surface 21a, but also the case where the drain electrode 11 faces the surface 21a via other members. In this embodiment, the drain electrode 11 faces the surface 21a via the conductive layer 32 and the insulating layer 31.

[0034] The gate electrode 13 and source electrode 12 are located on the opposite side of the drain electrode 11 from the surface 21a. Therefore, in this embodiment, the power semiconductor element 10 is arranged on the conductive layer 32 such that the gate electrode 13 and source electrode 12 face upward. The gate electrode 13 and source electrode 12 are electrically connected to the control substrate 3. The gate electrode 13 and source electrode 12 receive a control signal E1 output from the control substrate 3. The control signal E1 is a signal indicating the gate voltage (or gate current) for controlling the switching between conduction and insulation between the drain electrode 11 and the source electrode 12. The gate voltage indicates the potential difference of the gate electrode 13 with respect to the potential of the source electrode 12.

[0035] The cover 22 is placed on the surface 21a of the heat sink 21 so as to cover the power semiconductor element 10. The cover 22 is used, for example, to protect the power semiconductor element 10 from external moisture and dirt. The cover 22 is made of, for example, an electrically insulating resin material. The cover 22 has a top plate 22a and side plates 22b. The top plate 22a is a plate member that faces the surface 21a of the heat sink 21 vertically via the power semiconductor element 10. The side plates 22b (side walls) are frame-shaped plate members that connect the top plate 22a and the surface 21a vertically and surround the power semiconductor element 10. The cover 22 is attached to the surface 21a of the heat sink 21 so as to cover the power semiconductor element 10.

[0036] The power semiconductor module 5 further comprises a first power line section 41 electrically connected to the drain electrode 11, a second power line section 42 electrically connected to the source electrode 12, a first control line section 43 electrically connected to the gate electrode 13, and a second control line section 44 electrically connected to the source electrode 12. In this specification, "electrically connected" means that two elements are connected in such a way that signals can be transmitted and power can be supplied between them. Thus, "electrically connected" includes both cases where two elements are directly connected to each other by wiring and cases where two elements are indirectly connected through other electrical elements.

[0037] The first power line section 41 and the second power line section 42 constitute the main circuit for supplying power from the drain electrode 11 to the source electrode 12. Each of the first power line section 41 and the second power line section 42 is composed of one or more electrical conductors capable of transmitting power from the drain electrode 11 to the source electrode 12. The electrical conductors constituting the first power line section 41 and the second power line section 42 may be, for example, conductors such as wiring, conductors, electric wires, cables, or lead terminals. The first power line section 41 and the second power line section 42 extend upward from the drain electrode 11 and the source electrode 12 toward the top plate 22a, and are drawn out through the top plate 22a from the area covered by the cover 22 in the region R1 to the area outside that region. In other words, the first power line section 41 and the second power line section 42 are drawn out from the inside to the outside of the housing 20 via the top plate 22a above. More specifically, the first power line section 41 and the second power line section 42 are brought out above the top plate 22a by passing through holes H1 and H2 formed in the top plate 22a, respectively.

[0038] The first power line section 41 includes, for example, a wire 41a and a lead terminal 41b. The wire 41a connects the drain electrode 11 to the conductive layer 34. The base end of the lead terminal 41b is connected to the conductive layer 34. The tip of the lead terminal 41b is led out to the outside of the cover 22 through a through hole H1 in the top plate 22a. The lead terminal 41b is electrically connected to the drain electrode 11 via the conductive layer 34 and the wire 41a. Therefore, power applied to the lead terminal 41b is input to the drain electrode 11 via the conductive layer 34 and the wire 41a.

[0039] The second power line section 42 includes, for example, a wire 42a and a lead terminal 42b. The wire 42a connects the source electrode 12 to the conductive layer 33. The base end of the lead terminal 42b is connected to the conductive layer 33. The tip of the lead terminal 42b is led out to the outside of the cover 22 through a through hole H2 in the top plate 22a. The lead terminal 42b is electrically connected to the source electrode 12 via the conductive layer 33 and the wire 42a. Therefore, power output from the source electrode 12 is transmitted to the lead terminal 42b via the wire 42a and the conductive layer 33.

[0040] The first control line section 43 and the second control line section 44 constitute a control circuit for supplying a control signal E1 to the gate electrode 13. Each of the first control line section 43 and the second control line section 44 is composed of one or more electrical conductors capable of transmitting the gate voltage indicated by the control signal E1 to the gate electrode 13. The electrical conductors constituting the first control line section 43 and the second control line section 44 may be, for example, conductors such as wiring, conductors, electric wires, cables, or lead terminals. The first control line section 43 and the second control line section 44 are led out from inside the housing 20 through through holes H10 in the lower heat sink 21 to the outside of the housing 20.

[0041] In this embodiment, the first power line section 41 and the second power line section 42 are led out to the outside of the housing 20 through the upper cover 22. On the other hand, the first control line section 43 and the second control line section 44 are led out to the outside of the housing 20 through the lower heat sink 21. In other words, of the first power line section 41, the second power line section 42, the first control line section 43, and the second control line section 44, only the first control line section 43 and the second control line section 44 are led out through the through hole H10 to region R2 on the back surface 21b of the heat sink 21. As a result, region R1 from which the first power line section 41 and the second power line section 42 are led out and region R2 from which the first control line section 43 and the second control line section 44 are led out are separated by the heat sink 21. Region R1 may be the region facing the surface 21a of a pair of regions located on both sides of the heat sink 21. Region R2 may be the region facing the back surface 21b of the pair of regions.

[0042] Therefore, the first control line section 43 and the second control line section 44 are drawn out on the opposite side from the first power line section 41 and the second power line section 42, with the heat sink 21 in between. As a result, at least the tip portions of the first control line section 43 and the second control line section 44 are located in region R2 on the back surface 21b, and at least the tip portions of the first power line section 41 and the second power line section 42 are located in region R1. The tip of the first power line section 41 means the end opposite to the base end of the first power line section 41 that is connected to the drain electrode 11. The tip of the second power line section 42 means the end opposite to the base end of the second power line section 42 that is connected to the source electrode 12. The tip of the first control line section 43 means the end opposite to the base end of the first control line section 43 that is connected to the gate electrode 13. The tip of the second control line section 44 means the end opposite to the base end of the second control line section 44 that is connected to the source electrode 12.

[0043] The through-hole H10 through which the first control line section 43 and the second control line section 44 pass is formed in a position that does not overlap with the gate electrode 13 and the source electrode 12 in a plan view, as shown in Figures 2 and 3. More specifically, it is formed at a position away from the gate electrode 13 and the source electrode 12. For example, as shown in Figure 3, the through-hole H10 is formed at a position away from the gate electrode 13 and the source electrode 12, where the sum of the length of the line connecting the connection point 43p of the first control line section 43 to the gate electrode 13 and the center of the through-hole H10, and the line connecting the connection point 44p of the second control line section 44 to the source electrode 12 and the center of the through-hole H10 is shortest. However, the through-hole H10 does not necessarily have to be formed at the position where the above sum is shortest (i.e., the ideal position). For example, if it is not possible to form the through-hole H10 at such an ideal position due to design or manufacturing reasons, the through-hole H10 may be formed at a position shifted from that ideal position.

[0044] As shown in Figure 2, the first control line section 43 includes, for example, a wire 43a and a connection terminal 43b. Wire 43a is connected to the gate electrode 13. Wire 43a extends downward from the gate electrode 13 and is led out through the through hole H10 to a region R2 on the back surface 21b of the heat sink 21. In other words, wire 43a is led out from inside the housing 20 through the heat sink 21 to the outside of the housing 20. Wire 43a, which is led out below the heat sink 21, is connected to the control board 3 via the connection terminal 43b.

[0045] The second control line section 44 includes, for example, a wire 44a and a connection terminal 44b. Wire 44a is connected to the source electrode 12 at a different location than where wire 42a is connected to the source electrode 12 (see Figure 3). Wire 44a extends downward from the source electrode 12 and, together with wire 43a of the first control line section 43, passes through the through hole H10 and is brought out to a region R2 on the back surface 21b of the heat sink 21. In other words, wire 44a, together with wire 43a, is brought out from inside the housing 20 through the heat sink 21 to the outside of the housing 20. Wire 44a brought out below the heat sink 21 is connected to the control board 3 via the connection terminal 44b. The second control line section 44 is supplied with a reference potential of the control signal E1. The reference potential means an arbitrarily determined reference potential and is not limited to zero V. The gate voltage indicated by the control signal E1 is shown as the difference in potential between the first control line section 43 and the reference potential of the second control line section 44.

[0046] When the control signal E1 is input to the gate electrode 13 by the first control line section 43 and the second control line section 44, the on or off timing of the power semiconductor element 10 is controlled. When the gate voltage indicated by the control signal E1 is equal to or greater than a threshold voltage (for example, 5V), the power semiconductor element 10 turns on, and the drain electrode 11 and the source electrode 12 become conductive. At this time, a large power, such as several thousand amperes or several thousand volts, is applied to the drain electrode 11 and the source electrode 12 via the first power line section 41 and the second power line section 42. On the other hand, when the gate voltage is less than the threshold voltage, the power semiconductor element 10 turns off, and the drain electrode 11 and the source electrode 12 become insulated. In this way, the power converter 1 switches between the conduction and insulation between the drain electrode 11 and the source electrode 12 according to the control signal E1.

[0047] The following describes the effects of the power semiconductor module 5 and power converter 1 of this embodiment, along with the problems of the comparative example.

[0048] Figure 4 is a simplified cross-sectional view of a comparative example power semiconductor module 105. In Figure 4, the power semiconductor element 110 is shown as a simplified circuit diagram. The power semiconductor module 105 comprises a housing 120 having a heat sink 121 and a cover 122, a power semiconductor element 110 disposed on the surface 121a of the heat sink 121, a first power line section 141 connected to the drain electrode 111, a second power line section 142 connected to the source electrode 112, a first control line section 143 connected to the gate electrode 113, and a second control line section 144 connected to the source electrode 112. In the power semiconductor module 105, a control signal E1 is input to the gate electrode 113 via the first control line section 143 and the second control line section 144. According to the control signal E1, conduction and insulation between the drain electrode 111 and the source electrode 112 are alternately switched. The first power line section 141, the second power line section 142, the first control line section 143, and the second control line section 144 are all routed out to the outside of the housing 120 through the upper cover 122.

[0049] The second control line section 144 is supplied with the reference potential of the control signal E1. Both the second power line section 142 and the second control line section 144 are connected to the source electrode 112. Unlike the second power line section 142, to which a large power E2 is supplied, the second control line section 144 is supplied with a small potential, such as zero volts or a few volts. The potential of the second power line section 142, to which a large power E2 is supplied, is prone to large fluctuations in accordance with fluctuations in the current flowing through the second power line section 142. On the other hand, since no current flows through the second control line section 144, the potential of the second control line section 144 is stable. Therefore, if the second control line section 144 is not provided and the gate voltage is set based on the potential of the second power line section 142, it is expected that the control signal E1 will be disturbed in accordance with fluctuations in the potential of the second power line section 142. On the other hand, if the second control line section 144 is provided, the situation in which the control signal E1 is disturbed can be suppressed by using a stable potential as the reference.

[0050] However, in the case of a power semiconductor module 105, where the first power line section 141, the second power line section 142, the first control line section 143, and the second control line section 144 are all drawn out in the same direction, there is a risk that large radiated noise N emitted from the first power line section 141 and the second power line section 142 to which a large power E2 is applied will easily propagate to the first control line section 143 and the second control line section 144. Since radiated noise N is an electromagnetic wave, it has the property of traveling in a straight line. Therefore, radiated noise N emitted from the first power line section 141 and the second power line section 142 will easily propagate to the first control line section 143 and the second control line section 144, which are drawn out upward together with the first power line section 141 and the second power line section 142.

[0051] For example, radiated noise N emitted from the first power line section 141 and the second power line section 142 inside the enclosure 120 propagates to the first control line section 143 and the second control line section 144 via the first path P10. Radiated noise N emitted from the first power line section 141 and the second power line section 142 outside the enclosure 120 propagates to the first control line section 143 and the second control line section 144 via the second path P20. In this way, radiated noise N generated inside and outside the enclosure 120 easily propagates to the first control line section 143 and the second control line section 144. The radiated noise N propagated to the first control line section 143 and the second control line section 144 becomes a factor that causes fluctuations in the control signal E1 input to the gate electrode 113.

[0052] The radiated noise N emitted from the first power line section 141 and the second power line section 142 increases in proportion to the power E2 applied to the first power line section 141 and the second power line section 142. Furthermore, the radiated noise N is greater the closer it is to the source of the radiated noise N. Therefore, the radiated noise N tends to be particularly large in and around the power semiconductor module 105, which is the source of the radiated noise N. Large power E2, such as several thousand volts or several thousand amperes, is applied to the first power line section 141 and the second power line section 142. Consequently, large radiated noise N tends to be emitted from the first power line section 141 and the second power line section 142. On the other hand, small power, at most several tens of volts or several tens of amperes, is applied to the first control line section 143 and the second control line section 144, to which the control signal E1 is input. Therefore, when large radiated noise N from the first power line section 141 and the second power line section 142 propagates to the first control line section 143 and the second control line section 144, the potential of the first control line section 143 and the second control line section 144 fluctuates greatly due to the influence of the radiated noise N, and in response, the control signal E1 input to the gate electrode 113 is greatly disturbed.

[0053] For example, if the threshold voltage of the power semiconductor element 110 is 5V, a gate voltage of 5V or more must be applied to the gate electrode 113 in order to control the power semiconductor element 110 to the ON state. For example, if a potential of 5V is applied to the first control line section 143 and a potential of zeroV is applied to the second control line section 144, the potential difference of 5V between the first control line section 143 and the second control line section 144 is input to the gate electrode 113, and the space between the drain electrode 111 and the source electrode 112 is controlled to be conductive. However, if the potential of one or both of the first control line section 143 and the second control line section 144 fluctuates significantly due to the influence of radiated noise N, the voltage input to the gate electrode 113 will fluctuate significantly.

[0054] For example, if 5V is applied to the first control line section 143, and the potential of the second control line section 144, which was initially at zero V, fluctuates to 2V due to the influence of radiated noise N, the potential difference between the first control line section 143 and the second control line section 144 becomes 3V, which falls below the threshold voltage of 5V. In this case, the drain electrode 111 and the source electrode 112 are controlled to be in an insulated state, causing a malfunction in which the power semiconductor element 110 is unintentionally controlled to the off state. Similarly, if the potential of the first control line section 143, which was initially at 5V, fluctuates and decreases, a malfunction of the power semiconductor element 110 will occur. Conversely, even if the potential required to turn off the power semiconductor element 110 is applied to both the first control line section 143 and the second control line section 144, a malfunction may occur in which the power semiconductor element 110 is unintentionally controlled to the on state due to the influence of radiated noise N. Furthermore, depending on the magnitude of the radiated noise N, a voltage greater than the withstand voltage of the power semiconductor element 110 may be input to the gate voltage.

[0055] On the other hand, in the power semiconductor module 5 according to this embodiment, as shown in Figure 5, the first control line section 43 and the second control line section 44 are led out downwards, opposite to the first power line section 41 and the second power line section 42. Figure 5 is a simplified cross-sectional view of the power semiconductor module 5 according to this embodiment, and the power semiconductor element 10 is shown as a simplified circuit diagram. As shown in Figure 5, the first control line section 43 and the second control line section 44 are led out in region R2, opposite to region R1 from which the first power line section 41 and the second power line section 42 are led out, with a heat sink 21 acting as a shielding plate to shield radiated noise N in between. Therefore, large radiated noise N emitted from the first power wiring section and the second power wiring section is shielded by the heat sink 21 and does not propagate to the first control line section 43 and the second control line section 44.

[0056] Radiated noise N emitted from the first power line section 41 and the second power line section 42 inside the enclosure 20 is blocked by the heat sink 21 and therefore does not propagate to the first control line section 43 and the second control line section 44 on the back surface 21b of the heat sink 21. Outside the enclosure 20, the first control line section 43 and the second control line section 44 are not positioned in the direction in which radiated noise N emitted from the first power line section 41 and the second power line section 42 propagates, so such radiated noise N also does not propagate to the first control line section 43 and the second control line section 44. In this way, the first control line section 43 and the second control line section 44 are led out to the opposite side from the first power line section 41 and the second power line section 42 via the heat sink 21, and the heat sink 21 is used as a shielding plate, thereby suppressing the propagation of large radiated noise N from the first power line section 41 and the second power line section 42 to the first control line section 43 and the second control line section 44. This makes it possible to suppress large fluctuations in the control signal E1, which is based on the potentials of the first control line section 43 and the second control line section 44, due to the influence of radiated noise N. As a result, it is possible to suppress malfunctions such as malfunctions of the power semiconductor element 10 caused by fluctuations in the control signal E1.

[0057] As shown in Figure 5, the first control line section 43 includes a first extension section 43P that extends from the opening H10a along the extension direction d1 of the through hole H10 in the path of the first control line section 43 between the opening H10a of the through hole H10 on the surface 21a and the gate electrode 13. Similarly, the second control line section 44 includes a second extension section 44P that extends from the opening H10a along the extension direction d1, alongside the first control line section 43, in the path of the second control line section 44 between the opening H10a and the source electrode 12. The extension direction d1 may be a direction that intersects (orthogonal in one example) the surface 21a. The first power line section 41 includes a portion 41P that extends from the drain electrode 11 along a direction d2 that intersects the extension direction d1 inside the housing 20. Similarly, the second power line section 42 includes a portion 42P that extends from the source electrode 12 along direction d2 inside the housing 20.

[0058] The portion 42P of the second power line section 42 is a portion facing the first extension 43P and the second extension 44P in direction d2. The first extension 43P and the second extension 44P extend in direction d2 from the portion 42P of the second power line section 42 towards the opening H10a. In other words, the first extension 43P and the second extension 44P extend in direction d2 such that the distance in direction d2 from the portion 42P of the second power line section 42 increases monotonically. Therefore, it can also be said that the first extension 43P and the second extension 44P are monotonically increasing regions in which the distance in direction d2 from the portion 42P of the second power line section 42 increases monotonically. The portion 41P of the first power line section 41 may be a portion facing the first extension 43P and the second extension 44P in direction d2.

[0059] As in this embodiment, the first power line section 41 and the second power line section 42 may be led out to the outside of the housing 20 via the top plate 22a. In this case, since the first control line section 43 and the second control line section 44 are led out from the opposite side from the first power line section 41 and the second power line section 42, the propagation of radiated noise N from the first power line section 41 and the second power line section 42 to the first control line section 43 and the second control line section 44 can be suppressed more effectively.

[0060] As in this embodiment, the drain electrode 11 is positioned facing the surface 21a, the source electrode 12 and gate electrode 13 are positioned on the opposite side of the surface 21a from the drain electrode 11, and the through hole H10 may be formed in a position that does not overlap with the source electrode 12 and gate electrode 13 in a plan view. In this case, a configuration in which the first control line section 43 and the second control line section 44 are led through the through hole H10 to the region R2 on the back surface 21b of the heat sink 21 can be easily realized.

[0061] As in this embodiment, the first control line section 43 and the second control line section 44 may be led out through the through hole H10 to the region R2 on the back surface 21b. When the first control line section 43 and the second control line section 44 are passed together through the through hole H10 in this way, the distance between the first control line section 43 and the second control line section 44 becomes shorter, and accordingly, the area of ​​the loop formed by the first control line section 43 and the second control line section 44 becomes smaller. By reducing the loop area in this way, the electromotive force generated when electromagnetic waves (radiated noise N) link with the loop can be reduced. This reduces the risk of large conducted noise being generated in the first control line section 43 and the second control line section 44.

[0062] Although one embodiment of the present disclosure has been described above, the present disclosure is not limited to the embodiment described above.

[0063] <Example 1> Figure 6 is a cross-sectional view showing a power semiconductor module 5A of Modification 1. In the embodiment described above, the power semiconductor element 10 is installed on the surface 21a of the heat sink 21 such that the gate electrode 13 faces upward. In contrast, in Modification 1, the power semiconductor element 10 is arranged on the surface 21a of the heat sink 21 such that the gate electrode 13 faces downward. Thus, in the power semiconductor module 5A, the power semiconductor element 10 is installed on the heat sink 21 in an inverted state. As a result, the source electrode 12 and the gate electrode 13 are arranged to face the surface 21a. The drain electrode 11 is arranged on the opposite side of the surface 21a, with the source electrode 12 and the gate electrode 13 in between.

[0064] In this configuration, the through-holes H10 formed in the insulating layer 31 and the heat sink 21 are positioned to overlap with the gate electrode 13 and the source electrode 12 in a plan view. The gate electrode 13 and the source electrode 12 are connected to conductive layers 32A and 32B, respectively, which are electrically insulated from each other. Similar to the embodiment described above, the conductive layer 34 may be integrated with the conductive layer 32A without being separated from it. In this case, the wire 41a for connecting the conductive layer 34 and the conductive layer 32A can be omitted. The first control line section 43 and the second control line section 44, which are connected to the gate electrode 13 and the source electrode 12, respectively, are led out through the lower through-holes H10 to the region R2 on the back surface 21b of the heat sink 21. In this way, by directly leading out the first control line section 43 and the second control line section 44 from the through hole H10 below, the distance from the gate electrode 13 and source electrode 12 to the through hole H10 can be made as short as possible, so that the portion of the first control line section 43 and the second control line section 44 exposed inside the housing 20, where radiated noise N can propagate, can be made as small as possible. This reduces the risk of radiated noise N propagating to the first control line section 43 and the second control line section 44 inside the housing 20.

[0065] <Modification 2> Figure 7 is a simplified cross-sectional view of the power semiconductor module 5B of Modification 2. Figure 8 is a plan view of the power semiconductor element 10 of the power semiconductor module 5B as seen from above. In the embodiment described above, one through hole H10 is formed in the heat sink 21. In contrast, in Modification 2, a first through hole H11 and a second through hole H12 are formed in the heat sink 21A. As shown in Figures 7 and 8, the first through hole H11 and the second through hole H12 are formed at different positions on the heat sink 21A in a plan view. The first control line section 43 is led through the first through hole H11 to region R2 on the back surface 21b. The second control line section 44 is led through the second through hole H12 to region R2 on the back surface 21b.

[0066] As shown in Figure 8, the first through-hole H11 is formed in a plan view at a position closer to the connection point 43p of the first control line section 43 to the gate electrode 13 than to the connection point 44p of the second control line section 44 to the source electrode 12. For example, the first through-hole H11 is formed in a position adjacent to the gate electrode 13 at the shortest distance in a plan view. The first control line section 43 reaches the first through-hole H11 from the connection point 43p of the first control line section 43 to the gate electrode 13 at the shortest distance. The second through-hole H12 is formed in a plan view at a position closer to the connection point 44p of the second control line section 44 to the source electrode 12 than to the connection point 43p of the first control line section 43 to the gate electrode 13. The second through-hole H12 is formed in a position adjacent to the source electrode 12 at the shortest distance in a plan view. The second control line section 44 reaches the second through-hole H12 from the connection point 44p of the second control line section 44 to the source electrode 12 at the shortest distance.

[0067] In this way, the power semiconductor module 5B allows the first control line section 43 and the second control line section 44 to reach the first through-hole H11 and the second through-hole H12, respectively, via the shortest possible distance. This minimizes the portion of the first control line section 43 and the second control line section 44 that is exposed inside the housing 20A, where radiated noise N can propagate, thus reducing the risk of radiated noise N propagating to the first control line section 43 and the second control line section 44 inside the housing 20A.

[0068] <Variation 3> Figure 9 is a simplified cross-sectional view of the power semiconductor module 5C of the modified example 3. As shown in Figure 9, in the power semiconductor module 5C, the first control line section 43 and the second control line section 44, which are connected to the gate electrode 13 and source electrode 12 of the power semiconductor element 10, respectively, are twisted together. The first control line section 43 and the second control line section 44 are pulled out from inside the housing 20 through the through hole H10 to below the heat sink 21 while twisted together.

[0069] When the first control line section 43 and the second control line section 44 are twisted in this way, even if radiated noise N from the first power line section 41 and the second power line section 42 propagates to the first control line section 43 and the second control line section 44, the conducted noise generated in the first control line section 43 and the second control line section 44 will cancel out the conducted noise generated in the twisted section beyond them. Therefore, the risk of large amounts of conducted noise being generated in the first control line section 43 and the second control line section 44 can be reduced.

[0070] <Modification 4> Figure 10 is a simplified cross-sectional view of the power semiconductor module 5D of the modified example 4. As shown in Figure 10, the power semiconductor module 5D includes an electromagnetic shield 50 surrounding the first control line section 43 and the second control line section 44 inside the housing 20. The electromagnetic shield 50 is a cylindrical member extending between the gate electrode 13 and the source electrode 12 and the opening of the through hole H10 in the surface 21a. The electromagnetic shield 50 is positioned to surround the first control line section 43 and the second control line section 44 inside the housing 20. The first control line section 43 and the second control line section 44 are drawn out from the through hole H10 through the inside of the electromagnetic shield 50 to below the heat sink 21.

[0071] The electromagnetic shield 50 is configured to include a shielding layer capable of shielding radiated noise N from the first power line section 41 and the second power line section 42. The electromagnetic shield 50 may be composed entirely of a shielding layer, or it may be configured to include a shielding layer in part. Examples of shielding layers capable of shielding radiated noise N include conductive materials as well as magnetic materials. Therefore, the shielding layer constituting the electromagnetic shield 50 may be composed of a magnetic material instead of a conductive material, or it may be composed of a material that includes both conductivity and magnetism. The electromagnetic shield 50 may be, for example, a conductive tube made of aluminum or copper pipes. The electromagnetic shield 50 may be, for example, a conductive thin film such as aluminum foil or copper foil, or a conductive cylindrical mesh woven from aluminum wire or copper wire. With such a configuration, the radiated noise N from the first power line section 41 and the second power line section 42 is shielded by the electromagnetic shield 50, so that the propagation of radiated noise N to the first control line section 43 and the second control line section 44 inside the electromagnetic shield 50 can be suppressed.

[0072] <Modification 5> Figure 11 shows a cross-sectional view of the power semiconductor module 5E of the modified example 5. As shown in Figure 11, in the power semiconductor module 5E, the first control line section 43 and the second control line section 44 include a common mode filter 60 capable of removing the common mode component of conducted noise conducted through the first control line section 43 and the second control line section 44. Conducted noise is electromagnetic noise that travels through conductors used for power input and output, and is generated by the switching operation of the power semiconductor element 10.

[0073] The common mode filter 60 is located, for example, inside the through-hole H10 of the heat sink 21. That is, the common mode filter 60 is located between the front surface 21a and the back surface 21b and is embedded inside the heat sink 21. The first control line section 43 includes a line L1 connecting the gate electrode 13 and the common mode filter 60 inside the housing 20, the common mode filter 60 inside the heat sink 21, and a line L2 connecting the common mode filter 60 and the connection terminal 43b (see Figure 2) outside the housing 20. The second control line section 44 includes a line L3 connecting the source electrode 12 and the common mode filter 60 inside the housing 20, the common mode filter 60 inside the heat sink 21, and a line L4 connecting the common mode filter 60 and the connection terminal 44b (see Figure 2) outside the housing 20.

[0074] In the power semiconductor module 5E, the common-mode component of conducted noise that may occur in the first control line section 43 and the second control line section 44 can be removed, thereby suppressing fluctuations in the control signal E1 caused by this common-mode component. Furthermore, by arranging the common-mode filter 60 inside the through-hole H10, the propagation of radiated noise N from the first power line section 41 and the second power line section 42 to the first control line section 43 and the second control line section 44 via the common-mode filter 60 can be suppressed.

[0075] The common mode filter 60 does not need to be located inside the through-hole H10. For example, the common mode filter 60 may be located on the surface 21a or on the back surface 21b. When the common mode filter 60 is located on the surface 21a, the first control line portion 43 and the second control line portion 44 between the gate electrode 13 and the source electrode 12 and the common mode filter 60 may be twisted together. When the common mode filter 60 is located on the surface 21a, the first control line portion 43 and the second control line portion 44 between the gate electrode 13 and the source electrode 12 and the common mode filter 60, and the common mode filter 60 on the surface 21a, may be surrounded by an electromagnetic shield. The power semiconductor module 5E may be provided with a ferrite core instead of the common mode filter 60. In this case, the first control line portion 43 and the second control line portion 44 may linearly penetrate the annular ferrite core. Alternatively, the first control line section 43 and the second control line section 44 may be wound around an annular ferrite core to form a common mode choke coil.

[0076] <Variation 6> Figure 12 shows a cross-sectional view of the power semiconductor module 5F of the modified example 6. As shown in Figure 12, in the power semiconductor module 5F, a transformer 70 capable of removing the common-mode component of conducted noise conducted through the first control line section 43 and the second control line section 44 is connected to the first control line section 43 and the second control line section 44. The transformer 70 is located, for example, inside the through-hole H10 of the heat sink 21. That is, the transformer 70 is located between the front surface 21a and the back surface 21b and is embedded inside the heat sink 21. The first control line section 43 includes a line L1 connecting the gate electrode 13 and the transformer 70 inside the housing 20, the transformer 70 inside the heat sink 21, and a line L2 connecting the transformer 70 and the connection terminal 43b (see Figure 2) outside the housing 20. The second control line section 44 includes a line L3 connecting the source electrode 12 and the transformer 70 inside the housing 20, the transformer 70 inside the heat sink 21, and a line L4 connecting the transformer 70 and the connection terminal 44b (see Figure 2) outside the housing 20.

[0077] In the power semiconductor module 5F, the common-mode component of conducted noise that may occur in the first control line section 43 and the second control line section 44 can be removed, thereby suppressing fluctuations in the control signal E1 caused by this common-mode component. Furthermore, since the transformer 70 is placed inside the through-hole H10, the propagation of radiated noise N to the first control line section 43 and the second control line section 44 via the transformer 70 can be suppressed. Moreover, by placing the transformer 70 inside the heat sink 21, it can also provide electrical isolation between the inside and outside of the housing 20.

[0078] The transformer 70 does not need to be located inside the through-hole H10. For example, the transformer 70 may be located on the surface 21a or on the back surface 21b. When the transformer 70 is located on the surface 21a, the first control line section 43 and the second control line section 44 between the gate electrode 13 and the source electrode 12 and the transformer 70 may be twisted together. When the transformer 70 is located on the surface 21a, the first control line section 43 and the second control line section 44 between the gate electrode 13 and the source electrode 12 and the transformer 70, and the transformer 70 on the surface 21a may be surrounded by an electromagnetic shield.

[0079] This disclosure is not limited to the examples described above, and various other modifications are possible. In the embodiments and modifications described above, the first power line section and the second power line section are shown as being led out from the top plate to the outside of the housing. However, the first power line section and the second power line section may be led out from the side plate to the outside of the housing. In the embodiments and modifications described above, the heat sink on which the semiconductor element is arranged is shown as being flat. However, the shape of the heat sink is not limited to a flat shape, but may be other shapes (e.g., U-shaped). The heat sink may have cooling holes for passing a refrigerant, in addition to through holes. In this case, the cooling holes may be made of an insulating material such as resin. Heat sinks may have heat dissipation fins that exchange heat with the refrigerant. In this case, the heat dissipation fins may be made of a material with high thermal conductivity and low electrical conductivity (e.g., graphite). The cover is not limited to a resin material, but may be made of a conductive material such as a metal material.

[0080] The gist of this disclosure is as follows: [1] A power semiconductor element having a first electrode, a second electrode, and a control electrode, which alternately switches between conduction and non-conductivity between the first electrode and the second electrode in accordance with a control signal applied to the control electrode, A heat sink having a surface on which the power semiconductor element is installed and a back surface opposite to the surface, capable of dissipating heat from the power semiconductor element, A first power line section and a second power line section are electrically connected to the first electrode and the second electrode, respectively, and transmit power between the first electrode and the second electrode, A first control line section is electrically connected to the control electrode and provides the control signal to the control electrode, A second control line section is electrically connected to the second electrode and provides a reference potential for the control signal, Equipped with, The heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetic properties. The heat sink has at least one through hole that penetrates between the front surface and the back surface, It has at least one through hole that penetrates between the surface and the back surface, A power semiconductor module in which only the first control line section and the second control line section of the first power line section and the second control line section are drawn out through the through hole to the area on the back surface of the heat sink. [2] The first control line section extends from the cross-section with the through hole and has a first monotonically increasing region in which the distance between the first power line section and the second power line section increases monotonically in the direction from the control electrode toward the through hole, The power semiconductor module according to [1], wherein the second control line portion extends from the cross-section with the through hole and has a second monotonically increasing region in which the distance between the first power line portion and the second power line portion increases monotonically in the direction from the second electrode toward the through hole. [3] A cover is provided that covers the surface of the heat sink on which the power semiconductor element is mounted, The power semiconductor module according to [1] or [2], wherein the first power line portion and the second power line portion extend from the first electrode and the second electrode toward the cover and are led out to the outside of the area covered by the cover via the cover. [4] The cover has a side wall portion and a top plate that faces the surface with the side wall portion in between, The power semiconductor module according to [3], wherein the first power line section and the second power line section extend from the first electrode and the second electrode toward the top plate and are led out to the outside of the area covered by the cover via the top plate. [5] The first electrode is positioned to face the surface, The second electrode and the control electrode are arranged on the opposite side of the surface from the first electrode, The power semiconductor module according to any one of [1] to [4], wherein at least one of the through holes is formed in a position that does not overlap with the second electrode and the control electrode in a plan view of the heat sink. [6] The second electrode and the control electrode are arranged to face the surface, The first electrode is positioned on the opposite side of the surface from the second electrode and the control electrode, The power semiconductor module according to any one of [1] to [4], wherein at least one of the through holes is formed in a position that overlaps with the second electrode and the control electrode in a plan view of the heat sink. [7] The heat sink has one of the through holes, The power semiconductor module according to any one of [1] to [6], wherein the first control line section and the second control line section are led out through one of the through holes to the region on the back surface. [8] The power semiconductor module according to [7], wherein the first control line section and the second control line section are twisted together and drawn out through a single through-hole to the region on the back surface. [9] The power semiconductor module according to [7], further comprising a cylindrical electromagnetic shield including a shielding layer made of a material having at least one of electrical conductivity and magnetic properties, which is arranged between the second electrode and the control electrode and the opening of one of the through holes in the surface so as to surround the first control line portion and the second control line portion.

[10] The first control line section and the second control line section include a common mode filter or transformer capable of removing the common mode component of conducted noise conducted through the first control line section and the second control line section. The power semiconductor module according to [7], wherein the common mode filter or the transformer is located inside one of the through holes.

[11] The heat sink has a first through hole and a second through hole formed at different positions on the surface as the through holes, The first control line section is led out through the first through hole to the region on the back surface, The power semiconductor module according to any one of [1] to [6], wherein the second control line portion is led out through the second through hole to the region on the back surface.

[12] A power conversion unit having a power semiconductor module as described in any of [1] to

[11] , which converts from a first mode of power provided by a power source to a second mode of power required by a load device, A power conversion device comprising a control unit that transmits the control signal to the power semiconductor module. [Explanation of Symbols]

[0081] 1. Power converter 2. Switch circuit (power conversion section) 3. Control board (control unit) 5, 5A, 5B, 5C, 5D, 5E, 5F Power Semiconductor Modules 10, 10A, 10B, 10C, 10D, 10E, 10F Power Semiconductor Devices 11 Drain electrode (first electrode) 12 Source electrode (second electrode) 13 Grid electrode (control electrode) 20,20A enclosure 21,21A heat sink 21a surface 21b Back side 21c,H10 through hole 22 Cover 22a Top plate 22b Side plate (side wall part) 41 First power line section 41P part 42 Second Power Line Section 42P part (opposite part) 43 First control line section 43P First extension part 44 Second control line section 44P Second extension part 50 Electromagnetic Shielding 60 Common Mode Filters 70 transformers B Power supply E1 Control Signal E2 Electricity H11 First Through Hole H12 Second Through Hole M load device N radiation ノイズ R1, R2 domains d1 Extension direction d2 direction

Claims

1. A power semiconductor element having a first electrode, a second electrode, and a control electrode, which alternately switches between conduction and non-conductivity between the first electrode and the second electrode in accordance with a control signal applied to the control electrode, A heat sink having a surface on which the power semiconductor element is installed and a back surface opposite to the surface, capable of dissipating heat from the power semiconductor element, A first power line section and a second power line section are electrically connected to the first electrode and the second electrode, respectively, and transmit power between the first electrode and the second electrode, A first control line section is electrically connected to the control electrode and provides the control signal to the control electrode, A second control line section is electrically connected to the second electrode and provides a reference potential for the control signal, Equipped with, The heat sink includes a shielding layer made of a material having at least one of electrical conductivity and magnetic properties. The heat sink has at least one through hole that penetrates between the front surface and the back surface, A power semiconductor module in which only the first control line section and the second control line section of the first power line section and the second control line section are drawn out through the through hole to the area on the back surface of the heat sink.

2. The first control line portion extends from the cross-section with respect to the through hole and has a first monotonically increasing region in which the distance between the first power line portion and the second power line portion increases monotonically in the direction from the control electrode toward the through hole. The power semiconductor module according to claim 1, wherein the second control line portion extends from the cross-section with the through hole and has a second monotonically increasing region in which the distance between the first power line portion and the second power line portion increases monotonically in the direction from the second electrode toward the through hole.

3. The heat sink on which the power semiconductor element is mounted is covered with a cover, The power semiconductor module according to claim 1, wherein the first power line portion and the second power line portion extend from the first electrode and the second electrode toward the cover and are led out to the outside of the area covered by the cover via the cover.

4. The cover has a side wall portion and a top plate that faces the surface portion with the side wall portion in between. The power semiconductor module according to claim 3, wherein the first power line section and the second power line section extend from the first electrode and the second electrode toward the top plate and are led out to the outside of the area covered by the cover via the top plate.

5. The first electrode is positioned to face the surface, The second electrode and the control electrode are arranged on the opposite side of the surface from the first electrode, The power semiconductor module according to claim 1, wherein at least one of the through holes is formed in a position that does not overlap with the second electrode and the control electrode in a plan view of the heat sink.

6. The second electrode and the control electrode are arranged to face the surface, The first electrode is positioned on the opposite side of the surface from the second electrode and the control electrode, The power semiconductor module according to claim 1, wherein at least one of the through holes is formed in a position that overlaps with the second electrode and the control electrode in a plan view of the heat sink.

7. The heat sink has one of the through holes, The power semiconductor module according to claim 1, wherein the first control line section and the second control line section are led out to the region on the back surface through one of the through holes.

8. The power semiconductor module according to claim 7, wherein the first control line section and the second control line section are twisted together and drawn out through a single through-hole to the region on the back surface.

9. The power semiconductor module according to claim 7, further comprising a cylindrical electromagnetic shield including a shielding layer made of a material having at least one of electrical conductivity and magnetic properties, which is arranged between the second electrode and the control electrode and the opening of one of the through holes in the surface so as to surround the first control line portion and the second control line portion.

10. The first control line section and the second control line section include a common mode filter or transformer capable of removing the common mode component of conducted noise transmitted through the first control line section and the second control line section. The power semiconductor module according to claim 7, wherein the common mode filter or the transformer is located inside one of the through holes.

11. The heat sink has a first through hole and a second through hole formed at different positions on the surface as the through holes. The first control line section is led out through the first through hole to the region on the back surface, The power semiconductor module according to claim 1, wherein the second control line portion is led out through the second through hole to the region on the back surface.

12. A power semiconductor module according to any one of claims 1 to 11, comprising a power conversion unit that converts from a first mode of power provided by a power source to a second mode of power required by a load device, A power conversion device comprising a control unit that transmits the control signal to the power semiconductor module.

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