Cultivation facilities and cultivation methods

Abstract

To provide a cultivation installation and a cultivation method capable of promoting growth of Phalaenopsis orchid by making a temperature condition and a radiation condition optimum for a growing period of Phalaenopsis orchid.SOLUTION: A cultivation installation (1) cultivates Phalaenopsis orchid that grows while passing through a seedling growing period (S1), a stalk growing period (S2), a flowering period (S3), and an acclimation period (S4), and comprises a high-temperature chamber (5) which promotes growth of leaves prior to the stalk growing period (S2). The high-temperature chamber (5) comprises: radiation means (51) for radiating artificial light containing red light the most in a light period; and temperature control means (52) for controlling temperature to be a relatively higher cultivation temperature than ones in the stalk growing period (S2) and the flowering period (S3).SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This invention relates, in particular, to a cultivation facility and method for cultivating phalaenopsis orchids. [Background technology]

[0002] Conventional methods for cultivating phalaenopsis orchids are known, such as those described in Patent Document 1 (Japanese Patent Publication No. 2016-202108). Patent Document 1 discloses a cultivation method that is tailored to the growth stage of phalaenopsis (moth orchid). [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2016-202108 [Overview of the project] [Problems that the invention aims to solve]

[0004] Patent Document 1 discloses a method for shipping acquired phalaenopsis orchid seedlings after going through a flowering suppression period, a flowering induction period, and a shipping adjustment period. However, a problem arose in that individuals unsuitable for shipping due to excessive flowering or poor foliage during the shipping adjustment period had to be discarded (flower loss).

[0005] To solve this problem, the present invention aims to provide a cultivation facility and cultivation method that can provide phalaenopsis orchids with good form by providing optimal cultivation conditions for the growth of phalaenopsis orchids. [Means for solving the problem]

[0006] The cultivation facility according to the present invention is a cultivation facility for Phalaenopsis orchids that grow through a seedling growth period, a flower stalk growth period, a flowering period, and an acclimatization period. The cultivation facility is equipped with a high-temperature chamber that promotes leaf growth prior to the flower stalk growth period. The high-temperature chamber is equipped with an irradiation means that irradiates artificial light containing the most red light during the light period, and a temperature control means that adjusts the temperature so that the cultivation temperature is relatively higher than that during the flower stalk growth period and the flowering period.

[0007] Preferably, the temperature control means for the high-temperature chamber adjusts the cultivation temperature during the light period to 27-31°C and the cultivation temperature during the dark period to 22-26°C.

[0008] Preferably, the temperature control means for the high-temperature chamber adjusts the cultivation temperature during the light period to 30-31°C and the cultivation temperature during the dark period to 25-26°C.

[0009] Preferably, the leaves grown in the high-temperature room are from a Phalaenopsis orchid plant that has been pruned after an acclimatization period.

[0010] Preferably, the irradiation means irradiates with artificial light of a constant intensity.

[0011] Preferably, the leaves grown in the high-temperature chamber are meristem cultured seedlings of Phalaenopsis orchids.

[0012] Preferably, the irradiation means comprises a low-light irradiation means for irradiating with relatively low-intensity artificial light and a high-light irradiation means for irradiating with relatively high-intensity artificial light.

[0013] The cultivation method according to the present invention is a cultivation method for cultivating Phalaenopsis orchids that grow through a seedling growth period, a flower stem growth period, a flowering period, and an acclimatization period. The cultivation method includes a step of cultivating Phalaenopsis orchids during the flower stem growth period in a low-temperature greenhouse, a step of cultivating Phalaenopsis orchids during the flowering period in a cultivation greenhouse, a step of cultivating Phalaenopsis orchids during the acclimatization period in an acclimatization greenhouse, a trimming step of cutting off the flower stems of individuals that are not suitable for shipment among the Phalaenopsis orchids during the acclimatization period, a step of cultivating the trimmed Phalaenopsis orchid plants in a high-temperature greenhouse with temperature adjusted to be higher than that of the cultivation greenhouse to promote the growth of the leaves of the Phalaenopsis orchid plants, a step of re-cultivating the Phalaenopsis orchids cultivated in the high-temperature greenhouse in the low-temperature greenhouse, a step of re-cultivating the Phalaenopsis orchids re-cultivated in the low-temperature greenhouse in the cultivation greenhouse, and a step of re-cultivating the Phalaenopsis orchids re-cultivated in the cultivation greenhouse in the acclimatization greenhouse.

[0014] Preferably, the step of promoting the growth of the leaves of the trimmed Phalaenopsis orchid plants includes a step of adjusting the temperature to 30 - 31 °C during the light period and a step of adjusting the temperature to 25 - 26 °C during the dark period.

[0015] Preferably, the step of promoting the growth of the leaves of the trimmed Phalaenopsis orchid plants includes a step of irradiating artificial light containing the most red light during the light period.

Advantages of the Invention

[0016] According to the cultivation facility and cultivation method of the present invention, by setting cultivation conditions optimal for the growth of Phalaenopsis orchids, it is possible to provide Phalaenopsis orchids with good plant forms.

Brief Description of the Drawings

[0017] [Figure 1] It is a block diagram showing the cultivation method and cultivation facility according to Embodiment 1 of the present invention. [[ID={24]] [Figure 2] It is a block diagram showing the cultivation method and cultivation facility according to Embodiment 2 of the present invention. [Figure 3] It is a flowchart showing the cultivation method according to Embodiment 1 of the present invention. [Figure 4]This graph shows the results of Experiment Example 1, which investigated the optimal temperature conditions for pruned Phalaenopsis orchid plants. (a) shows the number of flower stalks that grew during the flower stalk growth period after cultivation under each temperature condition, and (b) shows the percentage of plants that were ready for shipment when cultivated under each temperature condition. [Figure 5] This graph shows the results of Experiment Example 2, which investigated the cultivation period when pruned Phalaenopsis orchid plants were grown under temperature condition C, and indicates the number of flower stalks that developed during the flower stalk growth period. [Figure 6] This graph shows the results of Experiment Example 3, which investigated the plant morphology of pruned Phalaenopsis orchid plants cultivated under temperature conditions B and C, and indicates the increase in the number of leaves. [Figure 7] This graph shows the results of Experiment Example 4, which investigated the optimal temperature conditions for Phalaenopsis orchid seedlings during the late growth stage. (a) shows the number of flower stalks produced during the flower stalk growth stage after cultivation under each temperature condition, and (b) shows the total number of flowers during the acclimatization period after cultivation under each temperature condition. [Figure 8] This graph shows the results of Experiment Example 4, which investigated the optimal temperature conditions for Phalaenopsis orchid seedlings during the late growth stage, and indicates the leaf width after cultivation under each cultivation condition. [Modes for carrying out the invention]

[0018] Embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and their descriptions will not be repeated.

[0019] (Regarding the cultivation methods of Phalaenopsis orchids) <Embodiment 1> Referring to Figure 1, a cultivation method according to an embodiment of the present invention will be described. The cultivation method according to this embodiment is a method for cultivating Phalaenopsis orchids that grow through a seedling growth period S1, a flower stalk growth period S2, a flowering period S3, and an acclimatization period S4. Phalaenopsis orchids can be broadly classified into four types based on their seedling size or petal size: nano (1-inch seedling with petal diameter of 3-5 cm), mini (1.7-inch seedling with petal diameter of 3-5 cm), midi (petal diameter of 5-9 cm), and large-flowered (petal diameter of 10 cm or more). In this embodiment, a cultivation method for mini Phalaenopsis orchids will be described as an example.

[0020] Phalaenopsis orchids have an extremely low probability of natural pollination, and it takes more than two years of cultivation for a single plant to bloom. Therefore, from the standpoint of time and cost efficiency, the cultivation method using meristem cultured seedlings is common industrially. The seedling growth period S1 can be distinguished into early and late stages based on differences in cultivation methods.

[0021] During the early growth stage (S1), Phalaenopsis orchids are cultivated in a high-temperature, high-humidity environment, for example, under temperature conditions of 25-30°C. For example, in the case of miniature Phalaenopsis orchids, meristem culture seedlings are cultivated in a flask for about 1 year and 8 months.

[0022] During the late stage of seedling growth (S1), meristem cultured seedlings grown in flasks are transplanted into pots containing a growing medium such as sphagnum moss and cultivated in a high-temperature, high-humidity environment. Since Phalaenopsis orchids are epiphytic plants, their roots attach to the growing medium, and their stems and leaves grow. For example, miniature Phalaenopsis orchids are cultivated in pots for about 6 months. This process forms young Phalaenopsis orchid seedlings.

[0023] During the flower stalk growth period S2, Phalaenopsis orchids are cultivated in low-temperature room 2, providing an environment suitable for the elongation of young flower stalks. A flower stalk refers to the stem that bears buds, including the stem before bud formation at the apex and the stem after bud formation at the apex. During the flower stalk growth period S2, the temperature is adjusted to 21-24°C during the light period and to 15-18°C during the dark period. No buds are formed during the flower stalk growth period S2. In other words, this period is a time when only the pure flower stalk elongates. For example, in the case of miniature Phalaenopsis orchids, cultivation lasts for about 8 weeks. Although the flower stalks of industrially produced Phalaenopsis orchids grow with the apex drooping as they elongate, their length is a factor that greatly affects the height of the orchid and the number of buds that can be formed later. Since the length of the flower stalk is determined to some extent during the flower stalk growth period S2, the appearance of the Phalaenopsis orchid at the time of shipment can be adjusted by adjusting the length of this period.

[0024] In this embodiment, the flower stalk growth period S2 is cultivated by irradiating it with artificial light including far-red light during the light period. The amount of artificial light is set so that the ratio of [total amount of artificial light] / [amount of far-red light] is between 4.5 and 15.0. The upper limit was set to 15.0 because no effect on promoting flower stalk elongation was observed when the ratio of [total amount of artificial light] / [amount of far-red light] was 15.0 or higher, but it is preferable that it be 12.0 or lower from the viewpoint of more reliably irradiating the orchid with far-red light. Furthermore, it is even preferable that it be 7.5 or lower from the viewpoint of further promoting flower stalk elongation. However, since too much far-red light may inhibit growth, for example, the lower limit of the ratio of [total amount of artificial light] / [amount of far-red light] is set to 4.5. In this embodiment, since far-red light is irradiated during the flower stalk growth period S2, the amount of flower stalk elongation during the same period can be promoted compared to when far-red light is not irradiated. Furthermore, the inventors have found that irradiating the flower stalk growth stage S2 with far-red light has almost no effect on bud formation (for example, by accelerating bud formation).

[0025] In the cultivation method of this embodiment, artificial light can be provided from sources such as LEDs, fluorescent lamps, or incandescent bulbs, but from the viewpoint of preventing the temperature of the leaf surface from rising, it is preferable to use LEDs as the light source. This is expected to prevent leaf burn in phalaenopsis orchids and eliminate the need to water the leaf surface. Specifically, the light sources in this embodiment are red (R), blue (B), green (G), and far-red (Fr) LEDs. Typically, each LED contains peak wavelengths of R=660nm, B=460nm, G=530nm, and Fr=730nm.

[0026] In this embodiment, a light source was used with a light quality ratio of, for example, R:G:B = 20:3:2 and an R / Fr ratio of 3 to 11. However, the light quality ratio should be one that is suitable for the orchid variety and growing conditions, and the above ratio is merely an example.

[0027] In this embodiment, the flower stalk growth period S2 is cultivated under a light-dark cycle of 12 hours of light and 12 hours of darkness. Artificial light is applied only during the light period and not during the dark period. Because this cultivation method uses artificial light, cultivation can be carried out regardless of the actual light-dark cycle of the external environment. In other words, phalaenopsis orchids can be cultivated all year round, regardless of the season or time of day.

[0028] In this embodiment, the artificial light during the flower stalk growth period S2 has a photon flux density (PFD) of 170-210 μmolm, which is an indicator of light intensity. -2 s -1 Therefore, from the perspective of ensuring sufficient photosynthesis for growth, the PFD is 180 μmolm -2 s -1 It is preferable that the above conditions are met. Furthermore, the photosynthetic photon flux density (PPFD), which is an indicator of the amount of light contributing to photosynthesis within the PFD, should be at least 160 μmolm -2 s -1 The above is preferable. The amount of light included in PPFD is the amount of red (R), blue (B), and green (G) light, but not the amount of far-red light (Fr). In other words, the PFD of artificial light can also be divided as shown in the following formula. This ensures sufficient light for growth, so cultivation can be carried out using entirely artificial light. Formula: PFD(μmolm -2 s -1 ) = 160 (RGB light intensity) + 10~50 (Fr light intensity) During the flowering period S3, phalaenopsis orchids are cultivated in cultivation room 3 in an environment suitable for bud formation and flowering. Phalaenopsis orchids have the characteristic that their flowering speed increases when the cultivation temperature is raised after cultivation under low temperature conditions. Therefore, during the flowering period S3, cultivation is carried out under relatively higher temperature conditions than during the flower stalk growth period S2. In the cultivation method of this embodiment, the temperature is adjusted to 24-27°C during the light period and to 19-22°C during the dark period. During the flowering period S3, the flower stalk elongates while buds are formed (early flowering period), and the buds bloom after a certain period (late flowering period). For example, in the case of miniature phalaenopsis orchids, cultivation takes place for about 6-8 weeks as the flowering period S3.

[0029] In the cultivation method of this embodiment, during the light period of the flowering period S3, artificial light that does not contain far-red light is irradiated. This is because no significant differences were found in the number of buds, the elongation amount of the flower stalks, and the flowering rate even when far-red light was irradiated during the flowering period S3. In other words, it can be said that far-red light does not affect the flowering period S3 of Phalaenopsis. Specifically, the artificial light used during the light period of the flowering period S3 is light containing red (R), green (G), and blue (B) LEDs, and its light quality is set to a ratio of, for example, R:G:B = 20:3:2. In order for Phalaenopsis to grow sufficiently, the photosynthetic photon flux density (PFD) of the artificial light is 160 μmolm -2 s -1 or more, which is preferable.

[0030] In the flowering period S3 of this embodiment, cultivation is carried out with a light-dark cycle of 12 hours of light period and 12 hours of dark period. The artificial light is irradiated only during the light period and not during the dark period. Since the cultivation method of this embodiment is artificial light cultivation, it can be cultivated regardless of the light-dark cycle of the actual external environment. In other words, Phalaenopsis can be cultivated throughout the year regardless of season or time.

[0031] During the acclimation period S4, in the acclimation chamber 4, the Phalaenopsis cultivated under the controlled environment is cultivated so that it gets used to the external environment. In the cultivation method of this embodiment, during the light period of the acclimation period, cultivation is carried out by irradiating artificial light containing red, green, and blue LEDs. The light quality of the artificial light is set to a ratio of, for example, R:G:B = 20:3:2. Also, the photosynthetic photon flux density (PFD) of the artificial light is, for example, 40 μmolm -2 s -1 or more. Note that the light source used during the acclimation period S4 may be only artificial light, or may be used in combination with sunlight, or may be only sunlight as described later. When cultivating with only artificial light, from the perspective of improving cultivation efficiency, it is preferable to cultivate with a light-dark cycle of 12 hours of light period and 12 hours of dark period.

[0032] Furthermore, the acclimatization period S4 may be conducted under the same illumination conditions as outdoors. In other words, phalaenopsis orchids may be cultivated in sunlight with the same light-dark cycle as the outdoor environment. It is preferable to adjust the temperature conditions so that they gradually approach the temperature range of the outdoor environment at the time of shipment, starting from the cultivation temperature during the flowering period S3. That is, during the acclimatization period S4, cultivation should be conducted in the range of 20-30°C during the light period and 15-20°C during the dark period. For example, in the case of miniature phalaenopsis orchids, cultivation should last for about two weeks during the acclimatization period S4. This allows the phalaenopsis orchids to last longer (maintain the flowering state for a longer period) compared to when they are shipped without going through the acclimatization period S4.

[0033] In this embodiment, the orchid cultivation method involves shipping orchids that meet the shipping standards during the acclimatization period S4, and re-cultivating orchids that do not meet the shipping standards. Specifically, referring further to Figure 3, the cultivation method in this embodiment comprises a pruning step S6 in which the flower stalks of orchids unsuitable for shipping are removed, a step S5 in which the growth of the leaves of the pruned orchid plants is promoted, and steps S2' to S4' in which the grown leaves are re-cultivated in the order of flower stalk growth period S2', flowering period S3', and acclimatization period S4'.

[0034] In pruning step S6, the flower stalk is pruned back to regulate the growth of the orchid. The pruning is done near the base of the flower stalk, and the removed stalk contains flowers that have already bloomed. These flowers can be used, for example, as preserved flowers or cut flowers.

[0035] In step S5, which promotes the growth of leaves in pruned phalaenopsis orchid plants, cultivation is carried out under conditions higher than the cultivation temperature during the flowering period. This allows for the cultivation of phalaenopsis orchids in an environment suitable for promoting leaf growth while suppressing the development of flower stalks. Therefore, step S5, which involves cultivating pruned phalaenopsis orchids, can be considered the "leaf growth period S5" of the phalaenopsis orchid. Furthermore, since this period is also the time when the pruned phalaenopsis orchid plant stores nutrients for the next flowering, it can also be considered the "growth preparation period S5". For example, in the case of miniature phalaenopsis orchids, cultivation lasts for about 8 weeks.

[0036] The leaf growth period S5 is cultivated under higher temperature conditions than the flowering period S3. In this embodiment, the leaf growth period S5 is cultivated by adjusting the temperature to 30-31°C during the light period and 25-26°C during the dark period. Furthermore, the inventors have found that no buds are formed when cultivated at 30-31°C during the light period, and from the viewpoint of promoting growth, it is desirable that the temperature difference between the light and dark periods be 5°C or more.

[0037] In this embodiment, during the leaf growth period S5, artificial light containing the most red light is irradiated at a constant intensity during the light period. Specifically, the artificial light is light containing red (R), green (G), and blue (B) LEDs, and its light quality is set to, for example, a ratio of R:G:B = 20:3:2. This is because a higher red light content leads to better photosynthetic efficiency and darker leaf color. From the viewpoint of promoting leaf growth, the photosynthetic photon flux density (PFD) of the artificial light is set to 160 μmol m 2 s -1 It is preferable that the above conditions are met.

[0038] In this embodiment, the leaf growth period S5 is cultivated under a light-dark cycle of 12 hours of light and 12 hours of darkness. Artificial light is applied only during the light period and not during the dark period. Because this cultivation method is artificial light cultivation, it can be performed regardless of the actual light-dark cycle of the external environment. In other words, phalaenopsis orchids can be cultivated all year round, regardless of the season or time of day.

[0039] After the leaf growth period S5, the phalaenopsis orchid plants are re-cultivated. The re-cultivation process S2' to S4' includes process S2', in which phalaenopsis orchids cultivated in high-temperature room 5 are re-cultivated in low-temperature room 2; process S3', in which phalaenopsis orchids cultivated in low-temperature room 2 are re-cultivated in cultivation room 3; and process S4', in which phalaenopsis orchids cultivated in cultivation room 3 are re-cultivated in acclimatization room 4.

[0040] The low-temperature room re-cultivation process S2', the cultivation room re-cultivation process S3', and the acclimatization room re-cultivation process S4' are basically the same as the cultivation methods for the flower stalk growth period S2, the flowering period S3, and the acclimatization period S4.

[0041] After the acclimatization chamber re-cultivation process S4', plants that meet the shipping standards are shipped, but plants that do not meet the standards are pruned again and can be re-cultivated.

[0042] Although this embodiment describes the cultivation method for Phalaenopsis orchids, it can also be suitably applied to other orchid species that employ similar cultivation methods.

[0043] The orchid cultivation method according to this embodiment is characterized by the provision of a preparation period for re-cultivation before re-cultivating individuals that are unsuitable for shipment. This allows for a smooth transition to a second bloom without a reduction in the number of buds during re-cultivation, thereby reducing flower loss.

[0044] <Embodiment 2> Next, with reference to Figure 2, a method for cultivating Phalaenopsis orchids according to this second embodiment will be described. The cultivation method of this embodiment is particularly suitable for cultivating nano-Phalaenopsis orchids and differs in that seedlings in the late growth stage (S1') are cultivated in a high-temperature room 5.

[0045] In this embodiment, during the late stage of seedling growth (S1'), cultivation is carried out under higher temperature conditions than during other periods. This allows for the cultivation of phalaenopsis orchids in an environment suitable for promoting leaf growth while suppressing the development of flower stalks. Therefore, the late stage of seedling growth (S1') can also be considered the "leaf growth period S1'" of phalaenopsis orchids. Furthermore, since this period is also a time for meristem culture seedlings to accumulate nutrients for growth, it can also be considered the "growth preparation period S1'". For example, in the case of nano-phalaenopsis orchids, cultivation lasts for approximately 12 to 22 weeks and can be adjusted according to the size of the orchid at the time of shipment. This results in the formation of nano-phalaenopsis orchid seedlings that are smaller than conventional seedlings but can still produce sufficient flower stalks.

[0046] In this embodiment, the late stage of the seedling growth period (S1') involves transplanting meristem cultured Phalaenopsis orchid seedlings, which were cultivated in flasks during the early stage of the seedling growth period (S1), into pots containing sphagnum moss or woody growing media in high-temperature chamber 5A. For seedlings in the late stage of the seedling growth period (S1'), the temperature is adjusted to 27-31°C during the light period and to 22-26°C during the dark period. From the viewpoint of promoting growth, it is desirable that the temperature difference between the light and dark periods be 5°C or more.

[0047] In this embodiment, during the late growth stage (S1') of the seedlings, artificial light containing the most red light is irradiated during the light period. Specifically, the artificial light used during the light period of the late growth stage (S1') of the seedlings is light containing red (R), green (G), and blue (B) LEDs, and its light quality is set to a ratio of, for example, R:G:B = 20:3:2. This is because a higher proportion of red light leads to better photosynthetic efficiency and darker leaf color. Furthermore, it is preferable to gradually increase the light intensity from the viewpoint of preventing photoinhibition. In this embodiment, the photosynthetic photon flux density (PFD) of the artificial light is 40 μmolm in the second week, with no irradiation in the first week. 2 s -1 From the third week onward, 160 μmolm 2 s -1 The irradiation was performed under the following conditions.

[0048] In this embodiment, the seedling growth period (late stage) S1' is cultivated under a light-dark cycle of 12 hours of light and 12 hours of darkness. Artificial light is applied only during the light period and not during the dark period. Because this cultivation method is artificial light cultivation, it can be performed regardless of the actual light-dark cycle of the external environment. In other words, phalaenopsis orchids can be cultivated all year round, regardless of the season or time of day.

[0049] The cultivation method according to this embodiment involves cultivating and shipping orchids in the following order: seedling growth period (early stage) S1, seedling growth period (late stage) S1', flower stalk growth period S2, flowering period S3, and acclimatization period S4. This allows for the cultivation of orchids with good form from the initial cultivation stage compared to Embodiment 1, thereby reducing flower loss. It should be noted that the re-cultivation process of Embodiment 1 can also be performed in the cultivation method of Embodiment 2. In this case, both meristem cultured orchid seedlings and pruned orchid plants can be cultivated in the high-temperature chamber 5A.

[0050] (Regarding cultivation facilities) <Embodiment 1> Next, we will describe the cultivation facility 1 for Phalaenopsis orchids that grow through the seedling growth period S1, the flower stalk growth period S2, the flowering period S3, and the acclimatization period S4. The cultivation facility 1 of this embodiment includes a low-temperature room 2 for cultivating Phalaenopsis orchids in the flower stalk growth period S2, a cultivation room 3 for cultivating Phalaenopsis orchids in the flowering period S3, an acclimatization room 4 for cultivating Phalaenopsis orchids in the acclimatization period S4, and a high-temperature room 5 that promotes leaf growth prior to the flower stalk growth period S2.

[0051] The low-temperature chamber 2 includes a first irradiation means 21 that irradiates artificial light containing far-red light during the light period, and a first temperature control means 22 that adjusts the cultivation temperature during the light and dark periods. Since the low-temperature chamber 2 is a room for cultivating phalaenopsis orchids with artificial light, the walls may be made of a light-shielding material.

[0052] In the low-temperature chamber 2, the phalaenopsis orchids are arranged in a multi-tiered configuration. Multi-tiered configuration refers to a configuration in which multiple cultivation shelves containing the phalaenopsis orchids are provided vertically, or a configuration in which they are arranged in a staggered, stepped manner. In this embodiment, the low-temperature chamber 2 has cultivation shelves composed of 2 to 6 tiers. This reduces the cultivation area and thus the cost required for cultivation. It also reduces the effort required to move around within the low-temperature chamber 2, thereby reducing the time and physical burden on workers.

[0053] The first irradiation means 21 is a means of providing a light source suitable for the flower stalk growth period S2 of the Phalaenopsis orchid, and is characterized by including far-red light. The first irradiation means 21 is preferably installed above the Phalaenopsis orchid.

[0054] The first temperature control means 22 is a means for adjusting the temperature inside the low-temperature chamber 2 to a cultivation temperature suitable for the flower stalk growth period S2. The first temperature control means 22 may be operated manually by an operator, or it may be operated automatically based on information from external components such as a thermometer and an illuminance sensor.

[0055] The cultivation room 3 includes a second irradiation means 31 that irradiates artificial light that does not contain far-red light during the light period, and a second temperature control means 32 that adjusts the cultivation temperature to be relatively higher than that of the low-temperature room 2. Since the cultivation room 3 is a room where plants are cultivated with artificial light, the walls may be made of a material that has light-shielding properties.

[0056] In cultivation room 3, the orchids are arranged in a multi-tiered configuration. Cultivation room 3 in this embodiment has cultivation shelves composed of 2 to 4 tiers. This reduces the cultivation area and thus the cost of cultivation. It also reduces the effort required to move around within cultivation room 3, thereby reducing the time and physical burden on the workers.

[0057] The second irradiation means 31 is a means of providing a light source suitable for the flowering period S3 of the phalaenopsis orchid, and is characterized by not containing far-red light. The second irradiation means 31 is preferably installed above the phalaenopsis orchid.

[0058] The second temperature control means 32 is a means for adjusting the temperature inside the cultivation chamber 3 to a cultivation temperature suitable for the flowering period S3. The second temperature control means 32 may be operated manually by an operator, or it may be operated automatically based on information from external components such as a thermometer and an illuminance sensor.

[0059] The acclimatization chamber 4 includes a third irradiation means 41 for irradiating with artificial light and a third temperature control means 42 for adjusting the temperature to be close to that of the external environment. The acclimatization chamber 4 can be used for cultivation under at least one of either artificial light or sunlight. When cultivating under artificial light, the walls may be made of a light-shielding material.

[0060] When cultivating using sunlight, the acclimatization chamber 4 includes a sunlight intake means 43 on its wall. The sunlight intake means 43 is provided on at least one of the ceiling wall or side wall of the acclimatization chamber 4 and should be configured to allow sunlight to enter the chamber. The sunlight intake means 43 is, for example, a light-transmitting material such as an acrylic plate, glass plate, or vinyl sheet.

[0061] In the acclimatization chamber 4, the phalaenopsis orchids are arranged in one or multiple tiers. The acclimatization chamber 4 in this embodiment has cultivation shelves composed of 1 to 4 tiers. This reduces the cultivation area and thus the cost of cultivation. Furthermore, when cultivating using sunlight, it is preferable that the upper and lower shelves are offset so as not to overlap vertically, from the viewpoint of ensuring that sunlight reaches all the phalaenopsis orchids. Of the phalaenopsis orchids cultivated in the acclimatization chamber 4, those that meet the shipping standards are shipped, while those that do not meet the standards are pruned and moved to the high-temperature chamber 5.

[0062] High-temperature room 5 is a room for cultivating Phalaenopsis orchid plants that are not suitable for shipment among those in acclimatization period S4, and is also a room for promoting the growth of leaves on pruned plants.

[0063] The high-temperature chamber 5 includes a fourth irradiation means 51 that irradiates artificial light containing the most red light during the light period, and a fourth temperature control means 52 that adjusts the temperature so that the cultivation temperature is relatively higher than that of the flower stalk growth period S2 and the flowering period S3. Since the high-temperature chamber 5 is a room for cultivation using artificial light, the walls may be made of a material that provides light shielding.

[0064] In the high-temperature chamber 5, the phalaenopsis orchids are arranged in a multi-tiered configuration. The high-temperature chamber 5 in this embodiment has cultivation shelves composed of 2 to 6 tiers. This reduces the cultivation area and thus the cost of cultivation. It also reduces the effort required to move around within the high-temperature chamber 5, thereby reducing the time and physical burden on workers.

[0065] The fourth irradiation means 51 is a means of providing a light source suitable for the leaf growth of Phalaenopsis orchids, and is characterized by irradiating with artificial light containing the most red light at a constant light intensity. The fourth irradiation means 51 is preferably installed above the Phalaenopsis orchid.

[0066] <Embodiment 2> Next, the orchid cultivation facility 1A according to this second embodiment will be described. Cultivation facility 1A is a facility suitable for cultivating orchid meristem culture seedlings, that is, seedlings in the late growth stage (S1'), in the high-temperature room 5A.

[0067] In this embodiment, the high-temperature chamber 5A is a room for cultivating Phalaenopsis orchids in the late stage of seedling growth (S1'), and is a room that promotes the growth of leaves in meristem cultured Phalaenopsis orchid seedlings.

[0068] The high-temperature chamber 5A includes a fourth irradiation means 51A that irradiates artificial light containing the most red light during the light period, and a fourth temperature control means 52A that adjusts the temperature so that the cultivation temperature is relatively higher than that of the flower stalk growth period S2 and the flowering period S3. Since the high-temperature chamber 5A is a room for cultivation using artificial light, the walls may be made of a material that provides light shielding.

[0069] In high-temperature chamber 5A, the orchids are arranged in a multi-tiered configuration. In this embodiment, high-temperature chamber 5A has cultivation shelves composed of 2 to 6 tiers. This reduces the cultivation area and thus the cost of cultivation. It also reduces the effort required to move around within high-temperature chamber 5A, thereby reducing the time and physical burden on workers.

[0070] The fourth irradiation means 51A irradiates light while adjusting the light intensity to gradually increase. Therefore, the fourth irradiation means 51A includes a low-light intensity irradiation means 53A that irradiates artificial light of a relatively low intensity compared to the high-light intensity irradiation means 54A described later, and a high-light intensity irradiation means 54A that irradiates artificial light of a relatively high intensity compared to the low-light intensity irradiation means 53A.

[0071] The low-light irradiation means 53A adjusts the light intensity in the high-temperature chamber 5A so that the light intensity in the second week from the start of cultivation is lower than the light intensity in subsequent weeks. For example, the low-light irradiation means 53A sets the photosynthetic photon flux density (PFD) in the first week to 0 μmolm -2 s -1 (No light irradiation), 40 μmolm in the second week -2 s -1 Adjust to that.

[0072] The high-intensity light irradiation means 54A adjusts the light intensity in the high-temperature chamber 5A from the second week onward to be higher than the light intensity from the start of cultivation to the second week. The high-intensity light irradiation means 54A is, for example, 160 μmolm -2 s -1 Adjust the light intensity accordingly. By gradually increasing the light intensity in this way, it is possible to prevent light inhibition and leaf burn in young seedlings.

[0073] The fourth temperature control means 52A is a means for adjusting the temperature inside the high-temperature chamber 5A to a cultivation temperature suitable for the seedling growth period (late stage) S1'. The fourth temperature control means 52A may be operated manually by an operator, or it may be operated automatically based on information from other components such as a thermometer and a lighting sensor.

[0074] In addition to the above configuration, each room may also be equipped with humidity sensors, illuminance sensors, etc. By measuring the humidity, illuminance, etc. inside the room, it is possible to manage the room to create an environment suitable for cultivating Phalaenopsis orchids during the flower stalk growth period S2, flowering period S3, acclimatization period S4, and leaf growth period S5.

[0075] Furthermore, the meristem culture seedlings in the late growth stage (S1') described in this embodiment and the pruned Phalaenopsis orchid plants in the leaf growth stage (S5) described in Embodiment 1 are grown under the same temperature conditions. Therefore, the high-temperature chamber 5A can be divided into sections, and both types of Phalaenopsis orchids may be grown in the same high-temperature chamber 5A.

[0076] (Regarding suitable growing conditions for pruned plants) Next, we will describe experimental examples 1-3, which investigated the optimal cultivation conditions for pruned plants.

[0077] Experimental examples 1-3 were all cultivated under the irradiation conditions listed in Table 1 and the temperature conditions listed in Table 2.

[0078] [Table 1]

[0079] [Table 2]

[0080] (Experimental Example 1) In Experimental Example 1, miniature phalaenopsis orchids that had been pruned were cultivated under the temperature conditions A to C listed in Table 2, and then moved to a low-temperature room for further cultivation. Note that temperature condition A, meaning "no treatment," refers to the pruned plants being immediately moved to the low-temperature room for further cultivation. The results are shown in Figure 4.

[0081] Figure 4(a) is a graph comparing the number of flower stalks under each temperature condition. When cultivated under temperature condition C, the largest number of flower stalks were observed in the low-temperature room (flower stalk growth period S2). From these results, it was found that pruned phalaenopsis orchid plants grow better when cultivated under temperature condition C first, rather than being immediately moved to the low-temperature room.

[0082] Figure 4(b) is a graph showing the percentage of orchids that were ready for shipment when phalaenopsis orchids grown under each temperature condition were re-cultivated in the order of low-temperature room, cultivation room, and acclimatization room. The percentage of orchids ready for shipment was calculated as (number of plants that met the shipment criteria out of the total number of pruned plants) / (total number of pruned plants). In Experiment Example 1, the case in which the shipment criteria were set as "plants with two or more flower stalks" is explained. When cultivated under temperature condition C, the percentage of orchids ready for shipment was 90%, while under temperature condition A it was less than 50%, and under temperature condition B it was 25%, which did not meet the shipment criteria at all. The poor result under temperature condition B is due to the inability to control the growth of the orchids, such as flowering at unintended times. From the results in Figures 4(a) and (b), it was found that when pruned phalaenopsis orchid plants are cultivated under temperature condition C, the growth of the orchids can be controlled, and the percentage of plants ready for shipment is significantly improved.

[0083] (Experimental Example 2) In Experiment Example 2, the optimal cultivation period for pruned Phalaenopsis orchid plants under temperature condition C was investigated. The results are shown in Figure 5.

[0084] Figure 5 is a graph comparing the number of flower stalks formed in a low-temperature room (during the flower stalk growth period) after cultivating phalaenopsis orchids under temperature condition C for 4 or 8 weeks. In Figure 5, F4482, F4487, and F2510 are mini phalaenopsis orchids, and F1881 is a midi phalaenopsis orchid. In Experimental Example 2, the shipping criteria were set as "mini phalaenopsis orchids have 2 or more flower stalks" and "midi phalaenopsis orchids have 1 or more flower stalks".

[0085] None of the varieties were able to produce enough flower stalks to meet the shipping standards after only four weeks of cultivation under temperature condition C. However, they were able to meet the shipping standards after eight weeks of cultivation. This result indicates that cultivation under temperature condition C for eight weeks makes re-cultivation possible. During this period, it is thought that the pruned phalaenopsis orchid plants store the nutrients necessary to grow flower stalks again.

[0086] (Experimental Example 3) In Experiment Example 3, we investigated the increase in the number of leaves of miniature phalaenopsis orchids (F4488, F2095, F4482, F2510) when cultivated under temperature conditions B and C, compared to immediately after pruning. The results are shown in Figure 6. From Figure 6, it was found that the number of leaves increased more when cultivated under temperature condition C than when cultivated under temperature condition B. In addition, as shown in Table 3 below, flower stalks developed in varieties F4488 and F4482 during cultivation under temperature condition B.

[0087] [Table 3]

[0088] These results show that cultivating under temperature condition C prevents the emergence of flower stalks at unintended times; in other words, it allows for the unification of flower stalk elongation and flowering timing even when re-cultivating plants that have undergone low-temperature treatment. Furthermore, the number of leaves tends to increase more easily than under temperature condition B, resulting in orchids with a better overall form.

[0089] Experimental examples 1-3 showed that by cultivating pruned phalaenopsis orchid plants under temperature condition C for about 8 weeks, the timing of flower stalk formation during subsequent cultivation could be controlled, resulting in a good number of flower stalks and leaves. In other words, cultivating under temperature condition C allowed for the production of plants that met shipping standards (plants with good form) at a high level, thereby reducing flower loss.

[0090] (Regarding the optimal growing conditions for nano-Phalaenopsis orchids) In Experiment Example 4, we investigated the optimal cultivation conditions for seedlings in the late seedling growth stage, i.e., nano-Phalaenopsis seedlings.

[0091] Experimental Example 4 was cultivated under the irradiation conditions listed in Table 4 and the temperature conditions listed in Table 5.

[0092] [Table 4]

[0093] [Table 5]

[0094] (Experimental Example 4) In Experimental Example 4, nano-Phalaenopsis orchids were cultivated for 12 weeks under temperature conditions D, E, and F, and then cultivated in a low-temperature room, cultivation room, and acclimatization room in that order. The results are shown in Figures 7 and 8.

[0095] Figure 7(a) shows that when cultivated under temperature conditions E and F, the number of flower stalks was 1.3 or more, which is more than when cultivated under temperature condition D. Also, Figure 7(b) shows that when cultivated under temperature conditions E and F, the total number of flowers was 5 or more, which is 2 or more more than when cultivated under temperature condition D. Therefore, if the shipping standards for nano-phalaenopsis orchids are set as "1 or more flower stalks" and "5 or more total flowers," it was found that high-level production and shipping are possible under temperature conditions E and F.

[0096] Furthermore, Figure 8 shows that when cultivated for 16 or 20 weeks under temperature conditions E and F, the leaf width was 2-3 mm or more larger than when cultivated under temperature condition D. Note that since nano-Phalaenopsis orchids are very small (1 inch seedlings), even a difference of 2 mm can significantly alter the plant's appearance, depending on the variety. In addition, it was found that when cultivated under temperature condition D, the leaves turned red, resulting in an unattractive plant appearance and reduced photosynthetic efficiency.

[0097] Experimental Example 4 showed that cultivating nano-phalaenopsis orchid plants under temperature conditions E and F resulted in better flower stalk count, leaf width, and total number of flowers. In other words, it was possible to produce plants that met shipping standards (plants with good form) at a high level, thereby reducing flower loss.

[0098] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The scope of the present invention is indicated by the claims rather than by the foregoing description, and all modifications within the meaning and scope equivalent to the claims are intended to be included. [Explanation of symbols]

[0099] 1. Cultivation facilities; 2. Low-temperature greenhouse; 3. Cultivation room; 4. Humidification room; 5.5A. High-temperature greenhouse; 21. First irradiation method; 22. First temperature control method; 31. Second irradiation method; 32. Second temperature control method; 41. Third irradiation method; 42. Third temperature control method; 43. Sunlight intake method; 51.51A. Fourth irradiation method; 52.52A. Fourth temperature control method; 53A. Low light intensity irradiation method; 54A. High light intensity irradiation method.

Claims

1. A cultivation facility for growing Phalaenopsis orchids, which go through the seedling growth period, flower stalk growth period, flowering period, and acclimatization period. Prior to the flower stalk growth period, the facility is equipped with a high-temperature chamber to promote the growth of at least one of the leaves of Phalaenopsis orchid plants that have been pruned after the aforementioned acclimatization period, and the leaves of Phalaenopsis orchid meristem culture seedlings. The aforementioned high-temperature chamber is An irradiation method that irradiates with artificial light containing the most red light during the light period, A cultivation facility equipped with a temperature control means for adjusting the temperature so that the cultivation temperature is relatively higher than the flower stalk growth period and the flowering period.

2. The cultivation facility according to claim 1, wherein the temperature control means of the high-temperature chamber adjusts the cultivation temperature during the light period to 27 to 31°C and the cultivation temperature during the dark period to 22 to 26°C.

3. The cultivation facility according to claim 1, wherein the temperature control means of the high-temperature chamber adjusts the cultivation temperature during the light period to 30 to 31°C and the cultivation temperature during the dark period to 25 to 26°C.

4. The cultivation facility according to claim 1, wherein the irradiation means irradiates with artificial light of a constant light intensity.

5. The cultivation facility according to claim 1, wherein the irradiation means comprises a low-light irradiation means for irradiating with relatively low-intensity artificial light and a high-light irradiation means for irradiating with relatively high-intensity artificial light.

6. A cultivation method for growing Phalaenopsis orchids, which grow through a seedling growth period, a flower stalk growth period, a flowering period, and an acclimatization period. The process of cultivating the aforementioned Phalaenopsis orchids during the flower stalk growth period in a low-temperature room, The process of cultivating the phalaenopsis orchids in a cultivation room during the aforementioned flowering period, The process of cultivating the phalaenopsis orchids in an acclimatization chamber during the aforementioned acclimatization period, The process of pruning the flower stalks of phalaenopsis orchids that are unsuitable for shipment during the aforementioned acclimatization period, The process involves cultivating the pruned phalaenopsis orchid plants in a high-temperature room where the temperature is controlled to be higher than that of the cultivation room, and irradiating them with artificial light containing the most red light during the light period to promote the growth of the leaves of the phalaenopsis orchid plants. The process involves cultivating the phalaenopsis orchids grown in the aforementioned high-temperature chamber in the aforementioned low-temperature chamber, The process involves cultivating the phalaenopsis orchids that were re-cultivated in the aforementioned low-temperature room in the aforementioned cultivation room, A cultivation method comprising the step of cultivating phalaenopsis orchids that have been recultivated in the aforementioned cultivation room in the aforementioned acclimatization room.

7. The process of promoting the growth of the leaves of the pruned phalaenopsis orchid plant is as follows: A process to adjust the temperature to 30-31°C during the light period, The cultivation method according to claim 6, further comprising the step of adjusting the temperature to 25-26°C during the dark period.

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