Semiconductor module

Abstract

To appropriately arrange a semiconductor element and each connection part inside a semiconductor module.SOLUTION: There is provided a semiconductor module comprising: a first main wiring connection part provided on a first main wiring pattern and connected with a first main wiring part applied with a first power supply voltage; a second main wiring connection part provided on a second main wiring pattern and connected with a second main wiring part applied with a second power supply voltage; and an output main wiring connection part provided on an output main wiring pattern and connected with an output main wiring part outputting an output voltage. A circuit board comprises a circuit region in which a first circuit and a second circuit are arranged side by side in a first direction, and a first connection region and a second connection region arranged across the circuit region in a second direction orthogonal to the first direction. The first main wiring connection part and the second main wiring connection part are provided in the first connection region, and the output main wiring connection part is provided in the second connection region.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a semiconductor module.

Background Art

[0002] Conventionally, semiconductor modules including a plurality of semiconductor elements are known (see, for example, Patent Document 1). Patent Document 1: International Publication No. WO 2019 / 044748 Patent Document 2: International Publication No. WO 2015 / 136603 Patent Document 3: Japanese Unexamined Patent Publication No. 2000-324846

Summary of the Invention

Problem to be Solved by the Invention

[0003] Inside a semiconductor module, a main wiring connecting portion connected to a power supply terminal, and an output main wiring connecting portion connected to an output terminal are provided. Inside the semiconductor module, it is preferable to appropriately arrange semiconductor elements and each connecting portion.

Means for Solving the Problem

[0004] In one embodiment of the present invention, a semiconductor module is provided. The semiconductor module may include a circuit board. The semiconductor module may include a first main wiring pattern provided on the circuit board. The semiconductor module may include a first main wiring connection portion provided on the first main wiring pattern, to which a first main wiring section for applying a first power supply voltage is connected. The semiconductor module may include a second main wiring pattern provided on the circuit board. The semiconductor module may include a second main wiring connection portion provided on the second main wiring pattern, to which a second main wiring section for applying a second power supply voltage is connected. The semiconductor module may include an output main wiring pattern provided on the circuit board. The semiconductor module may include an output main wiring connection portion provided on the output main wiring pattern, to which an output main wiring section for outputting an output voltage is connected. The semiconductor module may include a first circuit provided on the circuit board, electrically connected between the first main wiring connection and the output main wiring connection, and comprising a first transistor element and a first diode element connected in antiparallel to each other. The semiconductor module may also include a second circuit provided on the circuit board, electrically connected between the output main wiring connection and the second main wiring connection, and comprising a second transistor element and a second diode element connected in antiparallel to each other, and arranged alongside the first circuit in a first direction on the circuit board. The circuit board may have a circuit region in which the first circuit and the second circuit are arranged side by side in the first direction, and a first connection region and a second connection region arranged on either side of the circuit region in a second direction perpendicular to the first direction. The first main wiring connection and the second main wiring connection may be provided in the first connection region. The output main wiring connection may be provided in the second connection region.

[0005] The first transistor element may have a first main electrode provided on its upper surface. The second transistor element may have a second main electrode provided on its upper surface. The semiconductor module may have a first auxiliary emitter wiring that defines the potential of the first main electrode. The semiconductor module may have a second auxiliary emitter wiring that defines the potential of the second main electrode. The semiconductor module may have a first auxiliary wire that directly connects the first auxiliary emitter wiring to the first main electrode. The semiconductor module may have a second auxiliary wire that directly connects the second auxiliary emitter wiring to the second main electrode.

[0006] The first auxiliary emitter wiring and the second auxiliary emitter wiring may be arranged on either side of the circuit region in the second direction.

[0007] The semiconductor module may include a plurality of first main wiring wires connecting the first main electrode and the output main wiring pattern. The semiconductor module may also include a plurality of second main wiring wires connecting the second main electrode and the second main wiring pattern.

[0008] The first diode element may have a diode electrode provided on its upper surface. The plurality of first main wiring wires may include through wires that connect the first main electrode and the output main wiring pattern via the diode electrode. The plurality of first main wiring wires may include direct wires that connect the first main electrode and the output main wiring pattern directly without going through the diode electrode.

[0009] The multiple wire connections of the multiple first main wiring wires to the first main electrode may be arranged along the first direction. The wire connections of the first auxiliary wires to the first main electrode may be positioned outward in the first direction from the multiple wire connections of the multiple first main wiring wires.

[0010] The wire connection portion of the first auxiliary wire to the first main electrode may be located between the wire connection portion of the direct wire included in the plurality of first main wiring wires to the first main electrode and the first auxiliary emitter wiring.

[0011] The first transistor element may have a control electrode provided on its upper surface, separated from the first main electrode. The first main electrode may have a first edge and a second edge facing each other in a top view. The connection portion of the first auxiliary wire to the first main electrode may be positioned closer to the first edge than to the second edge. The control electrode may be positioned closer to the second edge than to the first edge.

[0012] The semiconductor module may include a plurality of the first circuits and a plurality of the second circuits. The first circuits and the second circuits may be arranged alternately along the first direction.

[0013] The first transistor element and the first diode element may be provided on the first main wiring pattern. The second transistor element and the second diode element may be provided on the output main wiring pattern.

[0014] The first transistor element may be positioned between the first diode element and the first auxiliary emitter wiring in the second direction. The second transistor element may be positioned between the second diode element and the second auxiliary emitter wiring in the second direction.

[0015] It should be noted that the above summary of the invention does not enumerate all of its features. Furthermore, subcombinations of these features may also constitute an invention. [Brief explanation of the drawing]

[0016] [Figure 1] This is an example of the internal circuitry housed inside the semiconductor module 100. [Figure 2]This diagram shows the detailed configuration of circuit block 200. [Figure 3] This diagram illustrates the arrangement of the auxiliary wire 164 in the comparative example. [Figure 4] This figure shows an example of a circuit diagram for circuit block 200. [Figure 5] This figure shows an example of the arrangement of the connection points for each wire in the main electrode 122. [Modes for carrying out the invention]

[0017] The present invention will be described below through embodiments of the invention, but these embodiments are not intended to limit the invention as defined in the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0018] In this specification, one side of a semiconductor element in a direction parallel to the depth direction of the semiconductor substrate is referred to as "upper," and the other side as "lower." Of the two main surfaces of a substrate, layer, or other component, one surface may be referred to as the upper surface and the other as the lower surface. The directions of "upper" and "lower" are not limited to directions parallel to the direction of gravity.

[0019] In this specification, technical matters may be described using the Cartesian coordinate axes X, Y, and Z. In this specification, the plane parallel to the top surface of the semiconductor device is defined as the XY plane, and the axis perpendicular to the XY plane is defined as the Z axis.

[0020] Furthermore, in this specification, distance, resistance, current, and the magnitude of other parameters may be described as equal or identical. Being equal or identical does not mean they are exactly the same; they may differ within the scope of the invention described herein. For example, equal or identical means allowing an error of no more than 10%.

[0021] FIG. 1 is an example of an internal circuit housed inside a semiconductor module 100. FIG. 1 shows an arrangement example of the internal circuit provided on a base portion 112. Although the internal circuit of the present example is an inverter circuit, the internal circuit is not limited thereto. The semiconductor module 100 may include a case portion made of resin or the like that covers the internal circuit, and a plurality of terminals exposed from the case portion. The plurality of terminals connect the internal circuit to an external circuit. In FIG. 1, among the plurality of terminals, a control terminal 18 and an auxiliary emitter terminal 16 are shown.

[0022] Each auxiliary emitter terminal 16 supplies an emitter voltage at an emitter electrode of a transistor element 120 included in the semiconductor module 100. Although the transistor element is an IGBT as an example, it may be a MOSFET. When the transistor element is a MOSFET, "emitter" in the present specification can be read as "source", and "collector" can be read as "drain".

[0023] Each control terminal 18 supplies a control voltage to the control terminal of the transistor element 120. The control voltage is, for example, a gate voltage in an IGBT or a MOSFET.

[0024] The semiconductor module 100 houses an internal circuit including a transistor element 120 and a diode element 130. Although the internal circuit is, for example, an inverter, it is not limited thereto. In one example, the semiconductor module 100 is used in a power conditioner (PCS: Power Conditioning Subsystem).

[0025] The base portion 112 is a plate-shaped substrate. The base portion 112 may be made of a conductive material such as aluminum. A ground potential may be applied to the base portion 112. A cooling device such as fins may be fixed to the lower surface of the base portion 112. An insulating circuit board may be provided on the upper surface of the base portion 112. A circuit including semiconductor elements and wiring is formed on the circuit board. The case portion is fixed to the upper surface of the base portion 112 with adhesive or the like. The base portion 112 may have two sets of opposing sides when viewed from above in the Z-axis direction. In this example, the base portion 112 has a longer side along the Y-axis and a shorter side along the X-axis.

[0026] The base portion 112 is provided with an auxiliary emitter pattern 17 that is connected to the auxiliary emitter terminal 16. An auxiliary emitter pattern 17 may be provided for each auxiliary emitter terminal 16. Each auxiliary emitter pattern 17 is, for example, a wiring pattern of a copper plate or the like formed on an insulating substrate placed on the base portion 112. The locations on the auxiliary emitter pattern 17 where the auxiliary emitter terminal 16 is connected are indicated by hatched lines. The auxiliary emitter pattern 17 is connected to the emitter electrode of the transistor element 120 via a wiring pattern, wire, or lead frame. In Figure 1, wires are shown as thin straight lines.

[0027] The base portion 112 is provided with a control pattern 19 that is connected to the control terminals 18. A control pattern 19 may be provided for each control terminal 18. Each control pattern 19 is, for example, a wiring pattern made of a copper plate or the like formed on an insulating substrate placed on the base portion 112. The locations on the control pattern 19 where the control terminals 18 are connected are indicated by hatched lines. The control pattern 19 is connected to the control terminals of the transistor element 120 via wiring patterns, wires, or lead frames.

[0028] Multiple circuit blocks 200 are provided on the base portion 112. In the example shown in Figure 1, six circuit blocks 200 (200-1 to 200-6) are provided. Each circuit block 200 may be electrically connected to the others in parallel. In this example, the multiple circuit blocks 200 are arranged in a single row along a first direction. In other examples, the multiple circuit blocks 200 may be arranged in multiple rows. The first direction may be, for example, a direction parallel to any side of the base portion 112 in a top view. In the example shown in Figure 1, the first direction is the direction parallel to the long side of the base portion 112 (Y-axis direction). Also, on the plane parallel to the top surface of the base portion 112 (XY plane), the direction perpendicular to the first direction is referred to as the second direction. In the example shown in Figure 1, the second direction is the direction parallel to the short side of the base portion 112 (X-axis direction). However, the first and second directions are not limited to these. The direction parallel to the long side of the base portion 112 may be the second direction, and the direction parallel to the short side may be the first direction, or the first and second directions may not be parallel to the sides of the base portion 112.

[0029] In the example shown in Figure 1, each component of circuit block 200-1 is denoted by a reference numeral, but other circuit blocks 200 have a similar structure to circuit block 200-1. The circuit block 200 in this example includes a circuit board 50, one or more transistor elements 120, one or more diode elements 130, a first main wiring connection 20, a second main wiring connection 22, and an output main wiring connection 24.

[0030] The circuit board 50 is a substrate placed on the base portion 112. The circuit board 50 may have an insulating substrate made of an insulating material such as ceramics. The circuit board 50 may have conductive patterns on both sides of the insulating substrate. These patterns may function as wiring patterns for the circuit block 200. For example, the circuit board 50 is a DCB (Direct Copper Bonding) substrate in which a copper circuit board is directly bonded to a ceramic substrate.

[0031] The transistor element 120 and the diode element 130 are mounted on the circuit board 50. The transistor element 120 is, for example, an IGBT or a MOSFET. The diode element 130 is, for example, a freewheeling diode (FWD) connected in antiparallel to the transistor element 120. In the example of Figure 1, the transistor element 120 and the diode element 130 are on separate semiconductor chips, but in other examples, the transistor element 120 and the diode element 130 may be formed on the same semiconductor chip. In this case, the chip for the transistor element 120 in each figure exists, but the chip for the diode element 130 does not need to exist. For example, the transistor element 120 and the diode element 130 may be RC-IGBTs (reverse conducting IGBTs). The diode element 130 may also be a built-in diode of a MOSFET. Furthermore, the transistor element 120 and the diode element 130 in this example are vertical devices in which the main electrodes (e.g., emitter electrode and collector electrode) are formed on the upper and lower surfaces of the semiconductor substrate, respectively, and the main current flows in the depth direction of the semiconductor substrate. In other examples, the transistor element 120 and the diode element 130 may be lateral devices in which two main electrodes are formed on the same plane.

[0032] The first main wiring connection section 20 is an area on the wiring pattern of the circuit board 50. The first main wiring connection section 20 is electrically connected to the first power supply terminal 10, and a first power supply voltage is applied to it. The first power supply terminal 10 is a terminal to which the positive terminal of a DC power supply provided outside the semiconductor module 100 is connected. The semiconductor module 100 may include a first main wiring 28 that connects the first main wiring connection section 20 and the first power supply terminal 10. The first main wiring 28 may connect the first main wiring connection section 20 of each circuit block 200 to the first power supply terminal 10. Figure 1 schematically shows the first main wiring 28 and the first power supply terminal 10. The first main wiring connection section 20 is connected to the transistor element 120 and the diode element 130 via wiring patterns, wires, lead frames, etc. on the circuit board 50.

[0033] The second main wiring connection section 22 is an area on the wiring pattern of the circuit board 50. The second main wiring connection section 22 is electrically connected to the second power supply terminal 12, and a second power supply voltage is applied to it. The second power supply terminal 12 is a terminal to which the negative terminal of an external DC power supply is connected. The first power supply terminal 10 and the second power supply terminal 12 function as power supply terminals (P, N) in the circuit housed by the semiconductor module 100. In this example, the first power supply voltage is higher than the second power supply voltage, but the second power supply voltage may be higher than the first power supply voltage. The semiconductor module 100 may include a second main wiring 29 connecting the second main wiring connection section 22 and the second power supply terminal 12. The second main wiring 29 may connect the second main wiring connection section 22 of each circuit block 200 to the second power supply terminal 12. Figure 1 schematically shows the second main wiring 29 and the second power supply terminal 12. The second main wiring connection section 22 is connected to the transistor element 120 and the diode element 130 via wiring patterns, wires, lead frames, etc. on the circuit board 50.

[0034] The output main wiring connection section 24 is an area on the wiring pattern of the circuit board 50. The output main wiring connection section 24 is electrically connected to the output terminal 14 and outputs the output voltage of the circuit block 200 to the output terminal 14. The output terminal 14 functions as the output terminal (U) of the circuit housed in the semiconductor module 100. The semiconductor module 100 may include an output main wiring 27 that connects the output main wiring connection section 24 and the output terminal 14. The output main wiring 27 may connect the output main wiring connection section 24 of each circuit block 200 to the output terminal 14. Figure 1 schematically shows the output main wiring 27 and the output terminal 14. The output main wiring connection section 24 is connected to the transistor element 120 and the diode element 130 via wiring patterns, wires, lead frames, etc. on the circuit board 50. This configuration electrically connects the circuit block 200 to each external terminal.

[0035] In this example, the region on the upper surface (XY plane) of the base portion 112 where the transistor element 120 and diode element 130 are provided is referred to as the circuit region 190. The circuit region 190 may be a rectangular region with the smallest area that includes all the transistor elements 120 and diode elements 130 in the XY plane. The circuit region 190 may be a rectangular region having sides parallel to each side of the base portion 112. The circuit region 190 may be a rectangular region having sides parallel to a first direction (Y-axis direction in this example) and a second direction (X-axis direction). The positions of both ends of the circuit region 190 in the second direction are the positions of the ends of the elements that are positioned furthest outward in the second direction among the transistor elements 120 and diode elements 130.

[0036] Furthermore, within the region of each circuit block 200, the regions that sandwich the circuit region 190 in the second direction (X-axis direction) are referred to as the first connection region 191-1 and the second connection region 191-2. In this example, the first connection region 191-1 is located on the negative side of the X-axis direction relative to the circuit region 190, and the second connection region 191-2 is located on the positive side of the X-axis direction relative to the circuit region 190. The positive side of the X-axis direction refers to the side in which the X-axis arrow shown in Figure 1 is pointing, and the negative side of the X-axis direction refers to the side opposite to the side in which the X-axis arrow is pointing.

[0037] The first main wiring connection section 20 and the second main wiring connection section 22 of each circuit block 200 are provided in the first connection area 191-1. The output main wiring connection section 24 is provided in the second connection area 191-2. This arrangement allows the input-side connection sections (first main wiring connection section 20 and second main wiring connection section 22) and the output-side connection section (output main wiring connection section 24) to be located together on the same side. This makes it easy to arrange the main wiring connecting each connection section to each terminal.

[0038] Figure 2 shows a detailed configuration of circuit block 200. Figure 2 shows the configuration of circuit block 200-1, but other circuit blocks 200 have a similar configuration. The circuit block 200 in this example has a circuit board 50, a first circuit 210-1, a second circuit 210-2, and a wiring pattern. The wiring pattern is a pattern of copper plate or copper foil provided on the circuit board 50. The wiring pattern in this example includes a first main wiring pattern 21, a second main wiring pattern 23, an output main wiring pattern 25, a first auxiliary emitter wiring 140-1, a second auxiliary emitter wiring 140-2, a first control wiring 150-1, and a second control wiring 150-2.

[0039] The circuit block 200 may also have multiple wires (160-167) connecting elements or wiring. In Figure 2, wires are shown as thin straight lines, and connection points between wires and other components are shown as rectangular squares. Some or all of the wires in the configuration shown in Figure 2 may be replaced with wiring such as lead frames. The transistor element 120 and diode element 130 in this example have main electrodes on their top and bottom surfaces. Each transistor element 120 and diode element 130 is mounted on one of the wiring patterns, and the main electrode on the bottom surface of each element is connected to the wiring pattern. The main electrode on the top surface of each element is also connected to other components by wires or the like.

[0040] The first main wiring pattern 21 has a first main wiring connection 20. The second main wiring pattern 23 has a second main wiring connection 22. The output main wiring pattern 25 has an output main wiring connection 24. Each connection may be an area of ​​the respective wiring pattern, and may refer to a component such as a pad or copper block provided on the wiring pattern.

[0041] A first main wiring 28 is connected to the first main wiring connection 20. The first main wiring 28 connects the first main wiring connection 20 to the first power terminal 10. The first main wiring 28 is, for example, a plate-shaped or rod-shaped metal member. In Figure 2, the first main wiring 28 is schematically shown by a broken line. The first main wiring 28 may be connected to multiple first main wiring connection 20s in multiple circuit blocks 200.

[0042] A second main wiring 29 is connected to the second main wiring connection 22. The second main wiring 29 connects the second main wiring connection 22 to the second power terminal 12. The second main wiring 29 is, for example, a plate-shaped or rod-shaped metal member. In Figure 2, the second main wiring 29 is schematically shown by a broken line. The second main wiring 29 may be connected to multiple second main wiring connection 22 in multiple circuit blocks 200.

[0043] The output main wiring 27 is connected to the output main wiring connection section 24. The output main wiring 27 connects the output main wiring connection section 24 to the output terminal 14. The output main wiring 27 is, for example, a plate-shaped or rod-shaped metal member. In Figure 2, the output main wiring 27 is schematically shown by a broken line. The output main wiring 27 may be connected to multiple output main wiring connection sections 24 in multiple circuit blocks 200.

[0044] The first auxiliary emitter wiring 140-1 is connected to the first auxiliary emitter pattern 17-1 via a wire or the like. The first auxiliary emitter wiring 140-1 is wiring that defines the potential of the main electrode 122 of the first transistor element 120-1 by the voltage at the first auxiliary emitter terminal 16-1. The second auxiliary emitter wiring 140-2 is connected to the second auxiliary emitter pattern 17-2 via a wire or the like. The second auxiliary emitter wiring 140-2 is wiring that defines the potential of the main electrode 122 of the second transistor element 120-2 by the voltage at the second auxiliary emitter terminal 16-2. The first control wiring 150-1 is connected to the first control pattern 19-1 via a wire or the like. The second control wiring 150-2 is connected to the second control pattern 19-2 via a wire or the like. Furthermore, in two adjacent circuit blocks 200, the auxiliary emitter wiring 140 may be connected to each other by an inter-block wire 166, and the control wiring 150 may be connected to each other by an inter-block wire 167. As a result, the auxiliary emitter wiring 140 of multiple circuit blocks 200 are connected to the auxiliary emitter terminal 16, and the control wiring 150 is connected to the control terminal 18. In addition, in two adjacent circuit blocks 200, the output main wiring patterns 25 may be connected to each other by an inter-block wire 165.

[0045] The first circuit 210-1 is electrically connected between the first main wiring connection 20 and the output main wiring connection 24. The first circuit 210-1 in this example has a first transistor element 120-1 and a first diode element 130-1 connected in antiparallel to each other. Antiparallel means that the emitter electrode of the transistor element 120 is connected to the anode electrode of the diode element 130, and the collector electrode of the transistor element 120 is connected to the cathode electrode of the diode element 130.

[0046] The upper surface of the first transistor element 120-1 is provided with a first main electrode 122-1 and a control electrode 124. The upper surface of the second transistor element 120-2 is provided with a second main electrode 122-2 and a control electrode 124. The upper surface of each diode element 130 is provided with a diode electrode 132. For example, the main electrode 122 is the emitter electrode, the control electrode 124 is the gate electrode, and the diode electrode 132 is the anode electrode.

[0047] The first transistor element 120-1 and the first diode element 130-1 are arranged on the first main wiring pattern 21. The first main wiring pattern 21 may be provided in the first connection region 191-1 and the circuit region 190. The electrodes on the lower surfaces of the first transistor element 120-1 and the first diode element 130-1 (e.g., collector electrode and cathode electrode) are connected to the first main wiring pattern 21 by solder or the like. The first main electrode 122-1 of the first transistor element 120-1 and the diode electrode 132 of the first diode element 130-1 are connected to the output main wiring pattern 25 via the first main wiring wire 160-1. Each wire has a connection portion 170 to other components. In Figure 2, the connection portion 170 of each wire is shown as a rectangle, and some reference numerals are omitted. The first circuit 210-1 may have a first main wiring wire 161-1 that directly connects the first main electrode 122-1 and the output main wiring pattern 25 without going through the diode electrode 132.

[0048] The control electrode 124 of the first transistor element 120-1 is connected to the first control wiring 150-1 by the first control wire 162-1. This applies a gate voltage to the control electrode 124. The first main electrode 122-1 of the first transistor element 120-1 is connected to the first auxiliary emitter wiring 140-1 via the first auxiliary wire 164-1. This allows the potential of the first main electrode 122-1 to be controlled by the voltage of the first auxiliary emitter terminal 16-1, or the potential of the first main electrode 122-1 to be detected by the first auxiliary emitter terminal 16-1.

[0049] The second circuit 210-2 is electrically connected between the output main wiring connection 24 and the second main wiring connection 22. The second circuit 210-2 in this example has a second transistor element 120-2 and a second diode element 130-2 connected in antiparallel to each other. The second transistor element 120-2 and the second diode element 130-2 are placed on the output main wiring pattern 25. The output main wiring pattern 25 may be provided in the second connection region 191-2 and the circuit region 190. The electrodes on the lower surface of the second transistor element 120-2 and the second diode element 130-2 (e.g., collector electrode and cathode electrode) are connected to the output main wiring pattern 25 by solder or the like. Also, the second main electrode 122- of the second transistor element 120- 2 The diode electrode 132 of the second diode element 130-2 is connected to the second main wiring pattern 23 via the second main wiring wire 160-2. The second circuit 210-2 may have a second main wiring wire 161-2 that directly connects the second main electrode 122-2 and the second main wiring pattern 23 without going through the diode electrode 132. The second main wiring pattern 23 is provided in the first connection region 191-1. The second main wiring pattern 23 may or may not be provided in the circuit region 190.

[0050] The control electrode 124 of the second transistor element 120-2 is connected to the second control wiring 150-2 by the second control wire 162-2. This applies a gate voltage to the control electrode 124. The second main electrode 122-2 of the second transistor element 120-2 is connected to the second auxiliary emitter wiring 140-2 via the second auxiliary wire 164-2. This allows the potential of the second main electrode 122-2 to be controlled by the voltage of the second auxiliary emitter terminal 16-2, or the potential of the second main electrode 122-2 to be detected by the second auxiliary emitter terminal 16-2.

[0051] The first circuit 210-1 and the second circuit 210-2 are arranged side by side in a first direction. "Side by side in a first direction" is not limited to the position of the first circuit 210-1 in a second direction being exactly the same as the position of the second circuit 210-2 in a second direction. They are considered side by side in a first direction if at least a portion of the area of ​​the first circuit 210-1 and at least a portion of the area of ​​the second circuit 210-2 face each other in a first direction. More than half of the first circuit 210-1 in a second direction may face the second circuit 210-2 in a first direction.

[0052] As explained in Figure 1, by providing the input-side connection parts (first main wiring connection part 20 and second main wiring connection part 22) in the first connection area 191-1 and the output-side connection part (output main wiring connection part 24) in the second connection area 191-2, the main wiring (first main wiring 28, second main wiring 29, output main wiring 27) connecting the multiple connection parts and each terminal can be easily arranged inside the semiconductor module 100. Furthermore, since the output main wiring 27 can be arranged separately from the first main wiring 28 and the second main wiring 29, the inductive and capacitive components between the output main wiring 27 and the first main wiring 28 and the second main wiring 29 can be reduced. As a result, the influence of noise from external power supplies, etc., on the output main wiring 27 can be reduced.

[0053] Furthermore, it is preferable that the first auxiliary wire 164-1 directly connects the first auxiliary emitter wiring 140-1 and the first main electrode 122-1. In other words, the first auxiliary wire 164-1 is not connected to any components other than the first auxiliary emitter wiring 140-1 and the first main electrode 122-1. However, the first auxiliary wire 164-1 may be connected to the diode electrode 132 of the first diode element 130-1. Also, the first main wiring wires 160-1 and 161-1 are not connected to the first auxiliary emitter wiring 140-1. This allows the current path from the first auxiliary emitter terminal 16-1 to the first main electrode 122-1 (referred to as the auxiliary emitter path) to be separated from the current path from the first main electrode 122-1 to the output terminal 14 (referred to as the main current path). In other words, the auxiliary emitter path and the main current path do not share a common path.

[0054] A large main current flows through the main current path. Therefore, if the auxiliary emitter path and the main current path share a common path, the auxiliary emitter voltage applied to the first main electrode 122-1 will fluctuate due to voltage fluctuations caused by increases and decreases in the main current. For example, if the current change rate of the main current is di / dt and the internal inductance in the common path is Ls, a voltage fluctuation of ΔV = -Ls × di / dt will occur in the common path. As a result, the magnitude of the gate voltage relative to the emitter voltage of the first main electrode 122-1 will fluctuate, which may increase the switching time of the first transistor element 120-1 and increase switching losses.

[0055] In contrast, by separating the auxiliary emitter path and the main current path, fluctuations in the auxiliary emitter voltage (e.g., 0V) applied to the first main electrode 122-1 can be eliminated even if the main current increases or decreases. As a result, the switching loss of the first transistor element 120-1 can be reduced.

[0056] Similarly, it is preferable that the second auxiliary wire 164-2 directly connects the second auxiliary emitter wiring 140-2 and the second main electrode 122-2. In other words, the second auxiliary wire 164-2 is not connected to any components other than the second auxiliary emitter wiring 140-2 and the second main electrode 122-2. However, the second auxiliary wire 164-2 may be connected to the diode electrode 132 of the second diode element 130-2. Also, the second main wiring wires 160-2 and 161-2 are not connected to the second auxiliary emitter wiring 140-2. This allows the second auxiliary emitter terminal 16-2 to connect to the second main electrode 122- 2 The auxiliary emitter path up to the second main electrode 122-2 can be separated from the main current path from the second main electrode 122-2 to the second power supply terminal 12. In other words, the auxiliary emitter path and the main current path do not share a common path. This reduces the switching loss of the second transistor element 120-2.

[0057] The first auxiliary emitter wiring 140-1 and the second auxiliary emitter wiring 140-2 may be arranged on either side of the circuit region 190 in the second direction (X-axis direction). In this example, the first auxiliary emitter wiring 140-1 is placed in the first connection region 191-1, and the second auxiliary emitter wiring 140-2 is placed in the second connection region 191-2. As a result, the first transistor element 120-1 and the second transistor element Auxiliary wires 164 can be easily connected to each of the main electrodes 122 of 120-2.

[0058] In the second direction (X-axis direction), the first transistor element 120-1 may be positioned between the first diode element 130-1 and the first auxiliary emitter wiring 140-1. This allows the first transistor element 120-1 to be positioned near the first auxiliary emitter wiring 140-1, making it easy to provide the first auxiliary wire 164-1. The first auxiliary emitter wiring 140-1 may have a portion extending along the first direction (Y-axis direction) and a portion extending along the second direction (X-axis direction). The first auxiliary wire 164-1 may be connected to the portion of the first auxiliary emitter wiring 140-1 extending along the second direction. The second transistor element 120-2, the second diode element 130-2, and the second auxiliary emitter wiring 140-2 may have the same configuration as the first transistor element 120-1, the first diode element 130-1, and the first auxiliary emitter wiring 140-1. For example, in the second direction (X-axis direction), the second transistor element 120-2 may be positioned between the second diode element 130-2 and the second auxiliary emitter wiring 140-2.

[0059] In this example, the main electrodes 122 of each transistor element 120 are not connected to each other by wires or the like. This allows each wire connected to the main electrode 122 to be positioned roughly along the second direction (X-axis direction), preventing wire crossing. As a result, wires and the like can be mounted on each element at high density. Alternatively, the main electrodes of each transistor element 120 are directly connected to the main wiring pattern by wires or the like. This prevents the main current from concentrating on a specific wire compared to the case where the main electrodes of the transistor elements 120 are connected to each other and the main electrode of a specific transistor element 120 is connected to the main wiring pattern.

[0060] In this example, a control wire 162 and an auxiliary wire 164 are connected to each transistor element 120. Therefore, the gate voltage Vge relative to the emitter voltage can be precisely controlled for each transistor element 120.

[0061] Figure 3 illustrates the arrangement of the auxiliary wire 164 in the comparative example. In this example, the auxiliary wire 164 does not directly connect the main electrode 122 and the auxiliary emitter wiring 140. In this example, the main electrode 122 is connected to the first main wiring pattern 21 by the main wiring wire 160. The auxiliary wire 164 connects the first main wiring pattern 21 and the auxiliary emitter wiring 140. In other words, at least the main wiring wire 160 is a common path in both the main current path and the auxiliary emitter path. In this case, the internal inductance Ls of the main wiring wire 160 causes voltage fluctuations in response to fluctuations in the main current. As a result, the emitter voltage of the main electrode 122 fluctuates, and the gate voltage Vge relative to the emitter voltage fluctuates. This increases the on-time (the time required to transition from off to on) of the transistor element 120, and increases switching losses. As explained in the examples in Figures 1 and 2, the main current path and the auxiliary emitter path are separated, so the increase in switching losses can be suppressed.

[0062] Figure 4 shows an example of a circuit diagram of circuit block 200. In this example, circuit block 200 is an inverter located between the first power supply terminal 10 and the second power supply terminal 12. The collector terminal of the first transistor element 120-1 is connected to the first main wiring pattern 21, and the emitter terminal (first main electrode 122-1) is connected to the first auxiliary emitter wiring 140-1 and the output main wiring pattern 25. The first diode element 130-1 is connected in antiparallel to the first transistor element 120-1.

[0063] Second transistor element 120- 2 The collector terminal is connected to the output main wiring pattern 25, and the emitter terminal (second main electrode 122-2) is connected to the second auxiliary emitter wiring 140-2 and the second main wiring pattern 23. The second diode element 130-2 is connected in antiparallel to the second transistor element 120-2.

[0064] The first transistor element 120-1 and the second transistor element 120-2 are controlled complementaryly. That is, when one is in the ON state, the other is controlled to be in the OFF state. Multiple circuit blocks 200 are provided in parallel with each other between the first power terminal 10 and the second power terminal 12. The first transistor element 120-1 of each circuit block 200 may be controlled synchronously with each other. That is, multiple first transistor elements 120-1 may be controlled to be turned ON and turned OFF simultaneously. The second transistor elements 120-2 of each circuit block 200 may also be controlled synchronously with each other.

[0065] As shown in Figure 1, the semiconductor module 100 may include multiple first circuits 210-1 and multiple second circuits 210-2. As shown in Figure 1, the first circuits 210-1 and the second circuits 210-2 may be arranged alternately along the first direction. In this example, the first main electrodes 122-1 of the multiple first transistor elements 120-1 are not connected to each other. Similarly, the second main electrodes 122-2 of the multiple second transistor elements 120-2 are not connected to each other. This makes it easy to arrange the first circuits 210-1 and the second circuits 210-2 alternately along the first direction. In this example, the multiple first transistor elements 120-1 are controlled synchronously with each other, and the multiple second transistor elements 120-2 are controlled synchronously with each other. Therefore, by arranging the first circuit 210-1 and the second circuit 210-2 alternately, the circuits with the transistor element 120 turned on are arranged alternately, making it possible to equalize the heat distribution.

[0066] Furthermore, as explained in Figure 2, the transistor element 120 and the diode element 130, which are connected in antiparallel, may be placed on the same wiring pattern. This allows the two elements on the wiring pattern to operate alternately, further improving the heat distribution in the XY plane.

[0067] Figure 5 shows an example of the arrangement of the connections for each wire in the main electrode 122. Figure 5 shows the first main electrode 122-1, but the second main electrode 122-2 may have a similar arrangement.

[0068] As explained in Figure 2, the wires connected to the main electrode 122 include the main wiring wire 160 and the main wiring wire 161. The main wiring wire 160 is a via wire that connects the main electrode 122 to the main wiring pattern (e.g., output main wiring pattern 25 or second main wiring pattern 23) via the diode electrode 132. The main wiring wire 161 is a direct wire that connects the main electrode 122 to the main wiring pattern directly without going through the diode electrode 132.

[0069] In this example, the main electrode 122 of the transistor element 120 has a larger area than the diode electrode 132 of the diode element 130. In this case, if the transistor element 120 and the main wiring pattern are connected only with main wiring wires 160, the number of main wiring wires 160 may be limited by the area of ​​the diode electrode 132, even though there is room on the main electrode 122 to connect the main wiring wires 160. In contrast, by providing main wiring wires 161, the number of main wiring wires connected to the main electrode 122 can be increased. This reduces the current flowing through each main wiring wire, thereby suppressing heat generation in the wire. The number of main wiring wires 161 connected to one main electrode 122 can be less than the number of main wiring wires 160.

[0070] Furthermore, the multiple connection points 173 of the main wiring wire 160 to the main electrode 122 may be aligned along the first direction. When each main wiring wire 160 has multiple connection points to the main electrode 122, the connection point 173 is the connection point furthest from the main wiring pattern. In other words, the connection point 173 is the connection point closest to the tip of the main wiring wire 160. In the example of Figure 5, the multiple connection points 173 are arranged at predetermined intervals on a straight line 180 parallel to the first direction.

[0071] The connection portion 171 of the auxiliary wire 164 to the main electrode 122 may be positioned outward in the first direction from the multiple connection portions 173 of the multiple main wiring wires 160. Outward refers to the side closer to the end of the main electrode 122 in the XY plane. The connection portion 171 of the auxiliary wire 164 may be positioned on the same straight line 180 as the multiple connection portions 173. The connection portion 171 is positioned on the outermost side of the multiple connection portions arranged on the straight line 180. The main current flowing through the main electrode 122 may flow toward the connection portion 173 in a direction parallel to the XY plane. Since the main electrode 122 also has a small resistance component, a voltage drop due to the main current may occur in the main electrode 122 as well. For this reason, if the connection portion 171 is sandwiched between the connection portions 173, the voltage drop in the main electrode 122 may affect the voltage in the connection portion 173. In contrast, by positioning the connection portion 171 on the outermost side, the connection portion 171 can be placed in a region where the main current is less likely to flow, thereby reducing the influence of the voltage drop at the main electrode 122 on the voltage at the connection portion 171.

[0072] Furthermore, the connection portion 171 may be positioned between the connection portion 172 of the main wiring wire 161 and the auxiliary emitter wiring 140 (see Figure 2). In this example, the connection portion 172 may be positioned closer to the main wiring pattern than the straight line 180. With this arrangement, the connection portion 171 can also be positioned further out than the connection portion 172 in the second direction (X-axis direction). This reduces the effect of the voltage drop due to the main current on the voltage at the connection portion 171.

[0073] As shown in Figure 5, it is preferable that the connection portion 171 of the auxiliary wire 164 and the connection portions 173 and 172 of the main wiring wires 160 and 161 are separated on the main electrode 122. The distance between connection portion 171 and connection portion 173 may be greater than the distance between connection portions 173 themselves. By positioning connection portion 171 apart from other connection portions, it is possible to move connection portion 171 away from the point where the main current flows. This suppresses the temperature rise at connection portion 171, prevents melting of connection portion 171, and improves reliability.

[0074] Furthermore, the main electrode 122 and control electrode 124 of the transistor element 120 are provided separately on the upper surface. The main electrode 122 has a first edge 128-1 and a second edge 128-2 that face each other in a top view (XY plane). The connection portion 171 of the auxiliary wire 164 may be positioned closer to the first edge 128-1 than to the second edge 128-2. The control electrode 124 may be positioned closer to the second edge 128-2 than to the first edge 128-1.

[0075] In this example, the first side 128-1 and Second side 128-2 is a side parallel to the second direction (X-axis direction). The regions obtained by bisecting the upper surface of the transistor element 120 with a straight line parallel to the second direction are defined as the first region 182-1 and the second region 182-2. The connection portion 171 may be located in the first region 182-1, and the control electrode 124 may be located in the second region 182-2.

[0076] In this example, the auxiliary emitter wiring 140 to which the auxiliary wire 164 is connected and the control wiring 150 to which the control wire 162 is connected are located in the same connection area 191 (see Figures 1 and 2). Therefore, the auxiliary wire 164 and the control wire 162 extend in roughly the same direction. By positioning the connection part 171 and the control electrode 124 apart, the auxiliary wire 164 and the control wire 162 can be easily wired.

[0077] The transistor element 120 may have a trench gate 192. The trench gate 192 has a structure in which a gate insulating film and a gate electrode are embedded inside a groove formed on the upper surface of a semiconductor substrate. The trench gate 192 functions as the gate structure of an IGBT or MOSFET. When a predetermined gate voltage is applied to the trench gate 192, an N-type channel region is formed at the boundary of a P-type region adjacent to the trench gate 192.

[0078] The trench gate 192 may be provided extending along the first direction. Although Figure 5 shows one trench gate 192, multiple trench gates 192 may be provided at predetermined intervals along the second direction. Since a channel region is formed along the trench gate 192, the channel region is also provided extending along the first direction. In other examples, the trench gate 192 may be provided extending along the second direction. In this case, multiple trench gates 192 are arranged at predetermined intervals along the first direction.

[0079] As shown in Figure 5, the connectors 173 and 171 may be arranged side by side in a direction parallel to the extension direction of the trench gate 192. This ensures that the connectors 173 and 171 are positioned opposite the common trench gate 192. Therefore, even if a potential distribution occurs between positions overlapping and non-overlapping with the trench gate 192, or between positions overlapping with different trench gates 192, the difference between the potential at connector 171 and the potential at connector 173 can be reduced. This allows for more accurate detection of potential changes caused by the main current when detecting the potential of the main electrode 122 using the auxiliary emitter terminal 16.

[0080] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. It will be clear from the claims that such modified or improved forms may also be included in the technical scope of the present invention. [Explanation of symbols]

[0081] 10...First power terminal, 12...Second power terminal, 14...Output terminal, 16...Auxiliary emitter terminal, 17...Auxiliary emitter pattern, 18...Control terminal, 19...Control pattern, 20...First main wiring connection, 21...First main wiring pattern, 22...Second main wiring connection, 23...Second main wiring pattern, 24...Output main wiring connection, 25...Output main wiring pattern, 27...Output main wiring, 28...First main wiring, 29...Second main wiring, 50...Circuit board, 100...Semiconductor module, 112...Base section, 120...Transistor element, 122...Main electrode, 124... ...Control electrode, 128...side, 130...diode element, 132...diode electrode, 140...auxiliary emitter wiring, 150...control wiring, 160...main wiring wire, 161...main wiring wire, 162...control wire, 164...auxiliary wire, 165...inter-block wire, 166...inter-block wire, 167...inter-block wire, 170...connection, 171...connection, 172...connection, 173...connection, 180...straight line, 182...region, 190...circuit region, 191...connection region, 192...trench gate, 200...circuit block, 210...circuit

Claims

1. Circuit board and The first main wiring pattern provided on the circuit board, A first main wiring connection section is provided on the first main wiring pattern and to which a first main wiring section to which a first power supply voltage is applied is connected, A second main wiring pattern provided on the circuit board, A second main wiring connection section is provided on the second main wiring pattern and to which a second main wiring section for applying a second power supply voltage is connected, The output main wiring pattern provided on the circuit board, An output main wiring connection section is provided on the output main wiring pattern and to which an output main wiring section that outputs an output voltage is connected, A first circuit is provided on the circuit board, electrically connected between the first main wiring connection and the output main wiring connection, and includes a first transistor element and a first diode element connected in antiparallel to each other, The circuit board includes a second transistor element and a second diode element, which are provided on the circuit board, electrically connected between the output main wiring connection and the second main wiring connection, and connected in antiparallel to each other, and the second circuit is arranged on the circuit board in a first direction alongside the first circuit. Equipped with, The circuit board has a circuit region in which the first circuit and the second circuit are arranged side by side in the first direction, and a first connection region and a second connection region arranged on either side of the circuit region in a second direction perpendicular to the first direction. The first main wiring connection section and the second main wiring connection section are provided in the first connection area. The output main wiring connection section is provided in the second connection area. When viewed from above, the first main wiring pattern and the second main wiring pattern do not overlap. Semiconductor module.

2. The first transistor element has a first main electrode provided on its upper surface. The second transistor element has a second main electrode provided on its upper surface. The aforementioned semiconductor module is A first auxiliary emitter wiring that defines the potential of the first main electrode, A second auxiliary emitter wiring that defines the potential of the second main electrode, A first auxiliary wire directly connects the first auxiliary emitter wiring and the first main electrode, A second auxiliary wire directly connects the second auxiliary emitter wiring and the second main electrode. The semiconductor module according to claim 1, further comprising the above.

3. The first auxiliary emitter wiring and the second auxiliary emitter wiring are arranged to straddle the circuit region in the second direction. The semiconductor module according to claim 2.

4. A plurality of first main wiring wires connecting the first main electrode and the output main wiring pattern, A plurality of second main wiring wires connecting the second main electrode and the second main wiring pattern, The semiconductor module according to claim 2 or 3, comprising:

5. The first diode element has a diode electrode provided on its upper surface. The plurality of first main wiring wires are, A through wire connects the first main electrode and the output main wiring pattern via the diode electrode, A direct wire that directly connects the first main electrode and the output main wiring pattern without passing through the diode electrode. The semiconductor module according to claim 4, including the following:

6. The plurality of wire connection points of the plurality of first main wiring wires to the first main electrode are arranged along the first direction, The wire connection portion of the first auxiliary wire to the first main electrode is positioned outward in the first direction compared to the plurality of wire connection portions of the plurality of first main wiring wires. The semiconductor module according to claim 4 or 5.

7. The wire connection portion of the first auxiliary wire to the first main electrode is positioned between the wire connection portion of the direct wire included in the plurality of first main wiring wires to the first main electrode and the first auxiliary emitter wiring. The semiconductor module according to claim 5.

8. The first transistor element has a control electrode provided on its upper surface, separated from the first main electrode. The first main electrode has a first side and a second side that face each other when viewed from above, The connection portion of the first auxiliary wire to the first main electrode is positioned closer to the first side than to the second side. The control electrode is positioned closer to the second side than to the first side. A semiconductor module according to any one of claims 2 to 7.

9. The system comprises multiple of the first circuits and multiple of the second circuits. The first circuit and the second circuit are arranged alternately along the first direction. A semiconductor module according to any one of claims 1 to 8.

10. The first transistor element and the first diode element are provided on the first main wiring pattern. The second transistor element and the second diode element are provided on the output main wiring pattern. A semiconductor module according to any one of claims 1 to 9.

11. The first transistor element is positioned between the first diode element and the first auxiliary emitter wiring in the second direction. The second transistor element is positioned in the second direction between the second diode element and the second auxiliary emitter wiring. A semiconductor module according to any one of claims 2 to 8.

12. There are multiple circuit boards, The multiple circuit boards are arranged in the first direction, The semiconductor module according to claim 1, wherein each of the circuit boards has a circuit region in which the first circuit and the second circuit are arranged side by side in a first direction, and a first connection region and a second connection region arranged on either side of the circuit region in a second direction perpendicular to the first direction.

13. The semiconductor module according to claim 12, wherein there are multiple circuit boards, and the first circuit and the second circuit are alternately arranged along the first direction.

14. A circuit board and The first main wiring pattern provided on the circuit board, A first main wiring connection section is provided on the first main wiring pattern and to which a first main wiring section to which a first power supply voltage is applied is connected, A second main wiring pattern provided on the circuit board, A second main wiring connection section is provided on the second main wiring pattern and to which a second main wiring section for applying a second power supply voltage is connected, The output main wiring pattern provided on the circuit board, An output main wiring connection section is provided on the output main wiring pattern and to which an output main wiring section that outputs an output voltage is connected, A first circuit is provided on the circuit board, electrically connected between the first main wiring connection and the output main wiring connection, and includes a first transistor element and a first diode element connected in antiparallel to each other, The circuit board includes a second transistor element and a second diode element, which are provided on the circuit board, electrically connected between the output main wiring connection and the second main wiring connection, and connected in antiparallel to each other, and the second circuit is arranged on the circuit board in a first direction alongside the first circuit. Equipped with, The circuit board has a circuit region in which the first circuit and the second circuit are arranged side by side in the first direction, and a first connection region and a second connection region arranged on either side of the circuit region in a second direction perpendicular to the first direction. The first main wiring connection section and the second main wiring connection section are provided in the first connection area. The output main wiring connection section is provided in the second connection area. Multiple circuit boards exist, The multiple circuit boards are arranged in the first direction, Each of the circuit boards is a semiconductor module having a circuit region in which the first circuit and the second circuit are arranged side by side in a first direction, and a first connection region and a second connection region arranged on either side of the circuit region in a second direction perpendicular to the first direction.

15. The first transistor element has a first main electrode provided on its upper surface, The second transistor element has a second main electrode provided on its upper surface. The aforementioned semiconductor module is A first auxiliary emitter wiring that defines the potential of the first main electrode, A second auxiliary emitter wiring that defines the potential of the second main electrode, A first auxiliary wire directly connects the first auxiliary emitter wiring and the first main electrode, A second auxiliary wire directly connects the second auxiliary emitter wiring and the second main electrode. The semiconductor module according to claim 14, further comprising the above.

16. The first auxiliary emitter wiring and the second auxiliary emitter wiring are arranged on either side of the circuit region in the second direction. The semiconductor module according to claim 15.

17. A plurality of first main wiring wires connecting the first main electrode and the output main wiring pattern, A plurality of second main wiring wires connecting the second main electrode and the second main wiring pattern, The semiconductor module according to claim 15 or 16, comprising:

18. The first transistor element has a control electrode provided on its upper surface, separated from the first main electrode, The first main electrode has a first side and a second side that face each other when viewed from above, The connection portion of the first auxiliary wire to the first main electrode is positioned closer to the first side than to the second side. The control electrode is positioned closer to the second side than to the first side. A semiconductor module according to any one of claims 15 to 17.

19. The semiconductor module according to claim 14, wherein there are multiple circuit boards, and the first circuit and the second circuit are alternately arranged along the first direction.

Images