Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method capable of reducing processing unevenness in a surface of a substrate.SOLUTION: The substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 includes a processing tank 110, a substrate holding unit 120, an etching liquid supply unit 130, a bubble supply unit 140, and a control unit 161. The etching liquid supplier 130 has at least an upper discharge hole 131a and a lower discharge hole 132a. In the substrate processing apparatus 100, the controller 161 controls the processing for the substrate W. The controller 161 controls the etching liquid supplier 130 to adjust the discharge amount of the etching liquid LQ so that the discharge amount of the etching liquid LQ discharged from the upper discharge hole 131a is larger than the discharge amount of the etching liquid LQ discharged from the lower discharge hole 132a in a part of the period during which the substrate W is etched.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. The substrate is any one of, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for organic EL (Electroluminescence), a substrate for FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, and a substrate for a solar cell. [Background Art]

[0002] Patent Document 1 discloses a substrate processing apparatus. The substrate processing apparatus includes a processing tank, a substrate holding portion, a bubble supply portion, and a plurality of processing liquid supply portions. The plurality of processing liquid supply portions are disposed opposite to each other on the side wall of the processing tank. The plurality of processing liquid supply portions supply processing liquid toward the bubbles supplied from the bubble supply portion. The plurality of processing liquid supply portions belong to at least one group among a plurality of groups. The plurality of processing liquid supply portions supply processing liquid toward the bubbles in different periods for each group. Accordingly, the substrate processing apparatus according to Patent Document 1 reduces regions with insufficient bubbles by allowing bubbles to pass through the entire surface of the substrate. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2020-47885 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] However, the substrate processing apparatus according to Patent Document 1 has room for improvement in processing unevenness within the in-plane of the substrate.

[0005] The present invention has been made in view of these circumstances, and aims to provide a substrate processing apparatus and a substrate processing method that can reduce in-plane processing irregularities on a substrate. [Means for solving the problem]

[0006] As a result of diligent research to solve the above problem, the inventor discovered that the amount of etching at the top of the substrate was decreasing. The inventor discovered that one of the causes of this was, for example, the following: bubbles supplied from the bubble supply unit accumulate near the top of the processing tank, causing the temperature of the etching solution near the top of the processing tank to decrease. This decrease in the temperature of the etching solution near the top of the processing tank reduces the etching rate at the top of the substrate. Furthermore, the inventor found that with conventional etching solution supply methods, it is difficult to increase the etching rate at the top of the substrate even if bubbles are supplied.

[0007] Based on these findings, the present invention has the following configuration. That is, the present invention is a substrate processing apparatus for processing a substrate, comprising: a processing tank for storing an etching solution for etching the substrate; a substrate holding unit for holding the substrate and immersing the substrate in the etching solution stored in the processing tank; an etching solution supply unit disposed in the processing tank for supplying the etching solution into the processing tank, the etching solution supply unit having at least a first discharge hole from which the etching solution is discharged is directed toward the upper part of the substrate, and a second discharge hole disposed below the first discharge hole for discharging the etching solution; a bubble supply unit disposed in the processing tank for supplying a plurality of bubbles to the etching solution from below the substrate; and a control unit for controlling the processing of the substrate, wherein the control unit controls the etching solution supply unit to adjust the discharge amount of the etching solution so that, for all or part of the period during which the substrate is etched, the amount of etching solution discharged from the first discharge hole is greater than the amount of etching solution discharged from the second discharge hole.

[0008] The substrate processing apparatus processes a substrate. The substrate processing apparatus comprises a processing tank, a substrate holding unit, an etching solution supply unit, a bubble supply unit, and a control unit. The processing tank stores an etching solution for etching the substrate. The substrate holding unit holds the substrate and immerses the substrate in the etching solution stored in the processing tank. The etching solution supply unit is located in the processing tank and supplies the etching solution into the processing tank. The etching solution supply unit has at least a first discharge hole from which the etching solution is discharged toward the top of the substrate, and a second discharge hole located below the first discharge hole that discharges the etching solution. The bubble supply unit is located in the processing tank and supplies a plurality of bubbles to the etching solution from below the substrate. Here, the bubbles supplied from the bubble supply unit may accumulate near the top of the processing tank, which may cause the temperature of the etching solution near the top of the processing tank to decrease. This decrease in the temperature of the etching solution near the top of the processing tank may cause the etching rate on the top of the substrate to decrease.

[0009] Therefore, the present invention is further configured as follows: The control unit controls the processing of the substrate. The control unit controls the etching solution supply unit to adjust the amount of etching solution discharged so that, for all or part of the period during which the substrate is etched, the amount of etching solution discharged from the first discharge hole is greater than the amount of etching solution discharged from the second discharge hole. This makes it easier for the etching solution to be reliably supplied to the upper part of the substrate, even if a situation arises where air bubbles tend to accumulate near the top of the processing tank. Consequently, the etching solution becomes more efficient at etching the upper part of the substrate. In other words, the etching rate at the upper part of the substrate increases. As a result, the uniformity of etching within the plane of the substrate is improved. Thus, the present invention can reduce processing unevenness within the plane of the substrate.

[0010] In a substrate processing apparatus, the processing tank preferably comprises a bottom and a side wall portion extending upward from the bottom, the side wall portion including a first side wall portion and a second side wall portion facing the first side wall portion, and the first and second discharge holes are preferably provided on the first side wall portion side and the second side wall portion side, respectively. In other words, the etching solution is supplied to the upper part of the substrate from both the first side wall portion side and the second side wall portion side. This makes it easier for the etching solution to be supplied to the upper part of the substrate.

[0011] One example is a configuration in which an etching solution supply pipe having a first discharge hole and an etching solution supply pipe having a second discharge hole are provided in the first and second side walls, respectively. Another example is a configuration in which the first and second discharge holes are directly provided in the first and second side walls, respectively. Yet another example is a configuration in which an etching solution supply pipe having a first discharge hole and an etching solution supply pipe having a second discharge hole are provided a short distance from the first and second side walls, respectively.

[0012] In a substrate processing apparatus, the etching solution supply unit has a third discharge hole located at the bottom, and discharges the etching solution downward from the third discharge hole to the substrate. The control unit controls the etching solution supply unit to adjust the discharge of the etching solution so that, for all or part of the period during which the substrate is etched, the amount of etching solution discharged from the first discharge hole is greater than at least one of the amount of etching solution discharged from the second discharge hole and the amount of etching solution discharged from the third discharge hole. This makes it easier for the etching solution to be supplied to the upper part of the substrate.

[0013] One example is a configuration in which the etching solution supply pipe having a third discharge port is located at the bottom. Another example is a configuration in which the third discharge port is located directly at the bottom. Yet another example is a configuration in which the etching solution supply pipe having a third discharge port is located slightly away from the bottom.

[0014] In a substrate processing apparatus, it is preferable that the control unit controls the etching solution supply unit to adjust the amount of etching solution discharged so that the period during which the etching solution is discharged from the first discharge hole is longer than the period during which the etching solution is discharged from the second discharge hole. Therefore, it is easy to make the amount of etching solution discharged from the first discharge hole greater than the amount of etching solution discharged from the second discharge hole.

[0015] In a substrate processing apparatus, it is preferable that the control unit controls the etching solution supply unit to adjust the amount of etching solution discharged per unit time such that the amount of etching solution discharged from the first discharge hole per unit time is greater than the amount of etching solution discharged from the second discharge hole per unit time. For this reason, it is easy to make the amount of etching solution discharged from the first discharge hole greater than the amount of etching solution discharged from the second discharge hole.

[0016] A substrate processing apparatus includes a processing tank for storing an etching solution for etching the substrate, a substrate holding unit for holding the substrate and immersing the substrate in the etching solution stored in the processing tank, an etching solution supply unit disposed in the processing tank for supplying the etching solution into the processing tank, the etching solution supply unit having at least a first discharge hole from which the etching solution is discharged toward the upper part of the substrate, and a second discharge hole disposed below the first discharge hole for discharging the etching solution, and a unit disposed in the processing tank that supplies the etching solution from below the substrate. The present invention comprises a bubble supply unit that supplies multiple bubbles and a control unit that controls the processing on the substrate, wherein the control unit controls the etching solution supply unit to switch between the discharge of the etching solution from the first discharge hole and the discharge of the etching solution from the second discharge hole, and controls the bubble supply unit to adjust the discharge amount of the multiple bubbles so that the amount of multiple bubbles discharged during the period when the etching solution is discharged from the first discharge hole is less than the amount of multiple bubbles discharged during the period when the etching solution is discharged from the second discharge hole. As a result, during the period when the etching solution is discharged from the first discharge hole, the etching solution directed toward the top of the substrate is less likely to be dispersed by bubbles. In other words, the etching solution is supplied intensively to the top of the substrate. Therefore, the etching rate at the top of the substrate can be increased. As a result, the uniformity of etching within the plane of the substrate is improved. Thus, the present invention can reduce processing unevenness within the plane of the substrate.

[0017] In a substrate processing apparatus, it is preferable that the control unit controls the bubble supply unit to stop the discharge of the plurality of bubbles during the period when the etching solution is discharged from the first discharge hole. As a result, during the period when the discharge of the plurality of bubbles is stopped, the etching solution directed toward the upper part of the substrate is less likely to be further dispersed by the bubbles. In other words, the etching solution is more easily supplied more concentratedly to the upper part of the substrate. Therefore, the etching rate at the upper part of the substrate can be further increased. As a result, the uniformity of etching within the plane of the substrate can be further improved.

[0018] In a substrate processing apparatus, it is preferable that the control unit controls the bubble supply unit to switch between discharging the plurality of bubbles and stopping the discharging of the plurality of bubbles during the period when the etching solution is discharged from the first discharge hole. This allows for an increase in the etching rate on the upper part of the substrate while maintaining the effect of supplying the plurality of bubbles to the substrate.

[0019] The present invention relates to a substrate processing method for processing a substrate, comprising: an immersion step of immersing a substrate held in a substrate holding unit in an etching solution stored in a processing tank; an etching solution supply step of supplying the etching solution into the processing tank in which the substrate is immersed; and a bubble supply step of supplying a plurality of bubbles into the processing tank in which the substrate is immersed, wherein the etching solution supply step is characterized in that, for all or part of the period during which the substrate is etched, the amount of etching solution discharged toward the upper part of the substrate is greater than the amount of etching solution discharged toward the lower part of the substrate.

[0020] The substrate processing method is a method for processing a substrate. The substrate processing method comprises an immersion step, an etching solution supply step, and a bubble supply step. In the immersion step, the substrate held in the substrate holder is immersed in an etching solution stored in a processing tank. In the etching solution supply step, the etching solution is supplied to the inside of the processing tank in which the substrate is immersed. In the bubble supply step, multiple bubbles are supplied to the inside of the processing tank in which the substrate is immersed. The discharge of bubbles creates a situation where bubbles tend to accumulate near the top of the processing tank. In the etching solution supply step, for all or part of the period during which the substrate is etched, the amount of etching solution discharged towards the top of the substrate is greater than the amount of etching solution discharged towards the bottom of the substrate. This makes it easier for the etching solution to be reliably supplied to the top of the substrate, even if a situation occurs where bubbles tend to accumulate near the top of the processing tank. Therefore, the etching solution becomes more efficient at etching the top of the substrate. In other words, the etching rate at the top of the substrate increases. As a result, the uniformity of etching within the plane of the substrate is improved. Therefore, the present invention can reduce processing irregularities within the plane of the substrate.

[0021] The present invention relates to a substrate processing method for processing a substrate, comprising: an immersion step of immersing a substrate held in a substrate holding section in an etching solution stored in a processing tank; an etching solution supply step of supplying the etching solution to the inside of the processing tank in which the substrate is immersed; and the inside of the processing tank in which the substrate is immersed Multiple The etching solution supply process comprises a bubble supply process for supplying a number of bubbles, wherein the etching solution supply process switches and adjusts between a process for discharging the etching solution toward the upper part of the substrate and a process for discharging the etching solution toward the lower part of the substrate during the period in which the substrate is etched, and the bubble supply process adjusts the amount of bubbles to be discharged such that the amount of bubbles discharged during the period in which the etching solution is discharged toward the upper part of the substrate is less than the amount of bubbles discharged during the period in which the etching solution is discharged toward the lower part of the substrate.

[0022] The substrate processing method is a method for processing a substrate. The substrate processing method comprises an immersion step, an etching solution supply step, and a bubble supply step. In the immersion step, the substrate held in the substrate holder is immersed in an etching solution stored in a processing tank. In the etching solution supply step, the etching solution is supplied to the inside of the processing tank in which the substrate is immersed. In the bubble supply step, multiple bubbles are supplied to the inside of the processing tank in which the substrate is immersed. During the period in which the substrate is etched, the etching solution supply step switches between a step of discharging the etching solution toward the top of the substrate and a step of discharging the etching solution toward the bottom of the substrate. At the same time, the bubble supply step adjusts the amount of multiple bubbles discharged during the period in which the etching solution is discharged toward the top of the substrate so that the amount of multiple bubbles discharged during the period in which the etching solution is discharged toward the top of the substrate is less than the amount of multiple bubbles discharged during the period in which the etching solution is discharged toward the bottom of the substrate. As a result, during the period in which the etching solution is discharged toward the top of the substrate, the etching solution directed toward the top of the substrate is less likely to be dispersed by the bubbles. In other words, the etching solution is supplied intensively to the top of the substrate. Therefore, the etching rate on the upper part of the substrate can be increased. As a result, the uniformity of etching within the plane of the substrate is improved. Thus, the present invention can reduce processing unevenness within the plane of the substrate.

[0023] Furthermore, the present invention also discloses the following inventions.

[0024] A substrate processing apparatus for processing a substrate, comprising: a processing tank that stores an etching solution for etching the substrate; a substrate holding unit that holds the substrate and immerses the substrate in the etching solution stored in the processing tank; an etching solution supply unit disposed in the processing tank and configured to supply the etching solution into the processing tank, the etching solution supply unit having at least a first discharge hole in which a discharge direction of the etching solution is directed toward an upper portion of the substrate, and a second discharge hole disposed below the first discharge hole and configured to discharge the etching solution; an etching solution discharge amount adjustment unit that adjusts a discharge amount of the discharged etching solution; a bubble supply unit disposed in the processing tank and configured to supply a plurality of bubbles to the etching solution from below the substrate; and a control unit that controls processing on the substrate, wherein the control unit controls the etching solution discharge amount adjustment unit to adjust, in a plurality of stages, a micro discharge amount that is slightly discharged when adjustment is performed such that the etching solution is not discharged from at least one of the first discharge hole or the second discharge hole during all or part of a period in which the substrate is etched.

[0025] The substrate processing apparatus includes an etching solution discharge amount adjustment unit that adjusts a discharge amount of the discharged etching solution. The control unit controls the etching solution discharge amount adjustment unit to adjust, in a plurality of stages, a micro discharge amount that is slightly discharged when adjustment is performed such that the etching solution is not discharged from at least one of the first discharge hole or the second discharge hole during all or part of a period in which the substrate is etched. Accordingly, the etching solution discharge amount adjustment unit can not only adjust whether the etching solution is discharged from at least one of the first discharge hole or the second discharge hole, but can also adjust the discharge amount when a small amount of the etching solution is discharged. Therefore, the etching rate within the surface of the substrate W can be minutely adjusted. As a result, the uniformity of etching within the surface of the substrate W can be minutely adjusted.

Advantageous Effects of Invention

[0026] According to the substrate processing apparatus and substrate processing method of the present invention, it is possible to reduce processing unevenness within the plane of the substrate. [Brief explanation of the drawing]

[0027] [Figure 1] This is a schematic cross-sectional view showing a substrate processing apparatus according to the first embodiment of the present invention. [Figure 2] This is a schematic plan view showing the etching solution supply unit and the bubble supply unit according to the first embodiment. [Figure 3] This figure shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to the first embodiment. [Figure 4] Figures 4(a) to 4(c) show the state of the inside of a processing tank in which the supply of etching solution and bubbles is controlled according to steps S1 to S3 of the first embodiment. [Figure 5] Figures 5(a) to 5(c) show the inside of the processing tank where the supply of etching solution and bubbles is controlled according to procedure S4. [Figure 6] Figures 6(a) and 6(b) are map images showing the uniformity of etching in the plane of the substrate when the supply of etching solution and bubbles is controlled according to procedures S1 and S2. [Figure 7] Figures 7(a) and 7(b) are map images showing the uniformity of etching in the plane of the substrate when the supply of etching solution and bubbles is controlled according to procedures S3 and S4. [Figure 8] This is a flowchart showing the substrate processing method according to the first embodiment. [Figure 9] This figure shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to the second embodiment. [Figure 10] Figures 10(a) to 10(c) show the state of the inside of a processing tank in which the supply of etching solution and bubbles is controlled according to steps S1 to S3 of the second embodiment. [Figure 11] This is a flowchart showing a substrate processing method according to the second embodiment. [Figure 12]This figure shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 8. [Figure 13] Figures 13(a) and 13(b) are map images showing the uniformity of etching in the plane of the substrate when the supply of etching solution and bubbles is controlled according to procedure S3 of the first embodiment and modified example 8. [Figure 14] This figure shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 9. [Figure 15] This figure shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to modified example 11. [Figure 16] This figure shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 13. [Figure 17] This figure shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to modified example 16. [Figure 18] Figures 18(a) and 18(b) are map images showing the uniformity of etching in the plane of the substrate when the supply of etching solution and bubbles is controlled according to steps S3 and S4 of the modified example 16. [Modes for carrying out the invention]

[0028] Embodiments of the present invention will be described below with reference to the drawings.

[0029] 1. First Embodiment 1-1. Overview of substrate processing equipment A substrate processing apparatus 100 according to the first embodiment of the present invention will be described with reference to Figures 1 to 8. First, the substrate processing apparatus 100 will be described with reference to Figures 1 and 2.

[0030] Figure 1 is a schematic cross-sectional view showing the substrate processing apparatus 100. Figure 2 is a schematic plan view showing the etching solution supply unit 130 and the bubble supply unit 140.

[0031] In this specification, for convenience, the direction in which the first side wall 116 and the second side wall 117 constituting the processing tank 110 are aligned is called the "width direction X". Within the width direction X, the direction from the second side wall 117 toward the first side wall 116 is called the "left direction". The direction opposite to the left direction is called the "right direction". The direction perpendicular to the width direction X, that is, the direction in which the substrates W are aligned within the processing tank 110, is called the "front-to-back direction Y". One direction of the "front-to-back direction Y" is appropriately called the "front". The direction opposite to the front is called the "rear direction". The depth direction of the processing tank 110 is called the "vertical direction Z". The direction from the bottom 115A of the processing tank 110 toward the surface of the etching solution LQ is called the "upward direction". The direction opposite to the upward direction is called the "downward direction". In each figure, front, rear, right, left, up, and down are shown as appropriate for reference.

[0032] The substrate processing apparatus 100 shown in Figure 1 processes substrates W. The substrate processing apparatus 100 is a batch type and processes multiple substrates W at once using etching solution LQ. Specifically, the substrate processing apparatus 100 processes multiple substrates W that make up a lot at once. One lot is, for example, 25 or 50 substrates. The substrate processing apparatus 100 can also process a single substrate W.

[0033] In the first embodiment, the substrate W is a semiconductor wafer. The substrate W may be, for example, any of the following: a liquid crystal display substrate, an organic electroluminescence (EL) substrate, a flat panel display (FPD) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, and a solar cell substrate.

[0034] The substrate processing apparatus 100 comprises a processing tank 110, a substrate holding section 120, an etching solution supply section 130, a bubble supply section 140, and a drainage section 150. The substrate processing apparatus 100 further comprises a common pipe P1, a plurality of supply pipes P2, a common pipe P3, a plurality of supply pipes P4, and a drainage pipe P5.

[0035] The processing tank 110 stores etching solution LQ for etching the substrates W. Specifically, the processing tank 110 immerses multiple substrates W in the etching solution LQ to etch the multiple substrates W.

[0036] The etching solution LQ is, for example, phosphoric acid (H3PO4). The etching solution may also be, for example, dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), hydrofluoric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide, organic acids (e.g., citric acid, oxalic acid), organic alkalis (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid hydrogen peroxide mixture (SPM), ammonia hydrogen peroxide mixture (SC1), hydrochloric acid hydrogen peroxide mixture (SC2), isopropyl alcohol (IPA), surfactants, corrosion inhibitors, or hydrophobic agents.

[0037] The processing tank 110 has a double-tank structure including an inner tank 112 and an outer tank 114. Both the inner tank 112 and the outer tank 114 have upper openings that open upward. The inner tank 112 is configured to store etching solution LQ and accommodate multiple substrates W. The outer tank 114 is provided on the outer surface of the upper opening of the inner tank 112. The height of the upper edge of the outer tank 114 is higher than the height of the upper edge of the inner tank 112. Etching solution LQ that overflows above the upper edge of the inner tank 112 is collected by the outer tank 114.

[0038] The processing tank 110 comprises a bottom portion 115A and side wall portions 115B extending upward from the bottom portion 115A. The side wall portions 115B include a first side wall 116 and a second side wall 117 that face each other along the width direction X. Specifically, the inner tank 112 includes the first side wall 116 and the second side wall 117.

[0039] The side wall portion 115B corresponds to an example of the "side wall portion" of the present invention. The first side wall 116 corresponds to an example of the "first side wall portion" of the present invention. The second side wall 117 corresponds to an example of the "second side wall portion" of the present invention.

[0040] The substrate holding section 120 holds multiple substrates W. The substrate holding section 120 can also hold a single substrate W. The substrate holding section 120 immerses multiple substrates W, which are aligned with spacing in the front-to-back direction Y, into the etching solution LQ stored in the processing tank 110.

[0041] Specifically, the substrate holder 120 moves upward or downward along the vertical direction Z while holding multiple substrates W. When the substrate holder 120 moves downward, the multiple substrates W held by the substrate holder 120 are immersed in the etching solution LQ stored in the inner tank 112. When the substrate holder 120 moves upward, the multiple substrates W held by the substrate holder 120 are lifted out of the etching solution LQ stored in the inner tank 112.

[0042] The substrate holder 120 includes a main plate 122 and a holding rod 124. The main plate 122 is a plate extending in the vertical direction Z. The holding rod 124 extends forward Y from the main plate 122. Multiple substrates W are aligned with spacing along the front-to-back direction Y, and the lower edges of each substrate W are brought into contact with the multiple holding rods 124 to hold them in an upright position (vertical position).

[0043] The substrate holding section 120 may further include a lifting unit 126. The lifting unit 126 raises and lowers the main plate 122 between a processing position where the multiple substrates W held by the substrate holding section 120 are located inside the inner tank 112 and a retracted position where the multiple substrates W held by the substrate holding section 120 are located above the inner tank 112. As a result, when the main plate 122 is moved to the processing position by the lifting unit 126, the multiple substrates W held by the holding rod 124 are immersed in the etching solution LQ. This allows the multiple substrates W to be processed.

[0044] 1-2. Etching solution supply unit and bubble supply unit As shown in Figure 1, the etching solution supply unit 130 is located in the processing tank 110.

[0045] The etching solution supply unit 130 is composed of, for example, an upper etching solution supply unit 131, a lower etching solution supply unit 132, and a bottom etching solution supply unit 133. The upper etching solution supply unit 131 is located in the upper layer of the processing tank 110. The lower etching solution supply unit 132 is located below the upper etching solution supply unit 131, for example, in the middle or lower layer of the processing tank 110. The bottom etching solution supply unit 133 is located below the lower etching solution supply unit 132, for example, in the bottom layer of the processing tank 110.

[0046] The etching solution supply unit 130, the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133 are examples of the "etching solution supply unit" of the present invention.

[0047] The upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133 each include an etching solution discharge volume adjustment unit 135.

[0048] The bubble supply unit 140 is provided at multiple locations in the bottom 115A of the processing layer 110. The bubble supply unit 140 includes a bubble discharge volume adjustment unit 145.

[0049] The etching solution supply unit 130 supplies the etching solution LQ into the processing tank 110. The etching solution supply unit 130 can supply the etching solution LQ into the processing tank 110 while the processing tank 110 is storing the etching solution LQ and the substrate W is immersed in it.

[0050] The etching solution supply unit 130 extends along the front-rear direction Y. The etching solution supply unit 130 is, for example, an etching solution supply pipe. The material of the etching solution supply pipe is, for example, quartz or PVC (polyvinyl chloride). The etching solution supply pipe is provided on the first side wall 116 and the second side wall 117, respectively.

[0051] The upper etching solution supply unit 131 is positioned above the lower etching solution supply unit 132. The lower etching solution supply unit 132 is positioned below the upper etching solution supply unit 131. In other words, the upper etching solution supply pipe corresponding to the upper etching solution supply unit 131 and the lower etching solution supply pipe corresponding to the lower etching solution supply unit 132 are arranged side by side in the vertical direction Z on the first side wall 116 and the second side wall 117, respectively.

[0052] The upper etching solution supply unit 131 has an upper discharge hole 131a. The upper discharge hole 131a is formed in the upper etching solution supply pipe. In other words, the upper discharge hole 131a is provided on the first side wall 116 side and the second side wall 117 side, respectively, via the upper etching solution supply pipe.

[0053] The upper discharge port 131a corresponds to an example of the "first discharge port" of the present invention.

[0054] The upper discharge hole 131a discharges the etching solution LQ. The direction in which the etching solution LQ is discharged from the upper discharge hole 131a is directed towards the upper part of the substrate W. The upper part of the substrate W is, for example, the part above the center of the substrate W held by the substrate holding part 120 (the upper half). The upper part of the substrate W may also be, for example, even higher than the center of the upper half of the substrate W. The upper discharge hole 131a is configured to facilitate the supply of the etching solution LQ to the upper part of the substrate W.

[0055] The lower etching solution supply unit 132 has a lower discharge hole 132a. The lower discharge hole 132a discharges the etching solution LQ. The lower discharge hole 132a is located below the upper discharge hole 131a. The lower discharge hole 132a is formed in the lower etching solution supply pipe. In other words, the lower discharge hole 132a is provided on the first side wall 116 side and the second side wall 117 side, respectively, via the lower etching solution supply pipe.

[0056] The lower discharge port 132a corresponds to an example of the "second discharge port" of the present invention.

[0057] The bottom etching solution supply unit 133 has a bottom discharge hole 133a. The bottom discharge hole 133a is located below the lower discharge hole 132a. The bottom discharge hole 133a is formed in the bottom etching solution supply pipe. The bottom discharge hole 133a is located on the bottom 115A side via the bottom etching solution supply pipe. The bottom etching solution supply unit 133 discharges the etching solution LQ from the bottom discharge hole 133a downwards from the substrate W.

[0058] The bottom discharge port 133a corresponds to an example of the "third discharge port" of the present invention.

[0059] The upper discharge hole 131a is angled upward. The upper part of the substrate W is located diagonally above the upper discharge hole 131a. The lower discharge hole 132a is angled slightly upward. The middle part of the substrate W is located diagonally above the lower discharge hole 132a. The bottom discharge hole 133a is angled significantly upward. The lower part of the substrate W is located near directly above the bottom discharge hole 133a. In this way, the upper discharge hole 131a, the lower discharge hole 132a, and the bottom discharge hole 133a are configured to discharge the etching solution LQ toward the upper, middle, and lower parts of the substrate W.

[0060] The upper etching solution supply unit 131 includes an upper etching solution supply unit 131X located on the first side wall 116 and an upper etching solution supply unit 131Y located on the second side wall 117. The upper discharge hole 131a is formed in both the upper etching solution supply units 131X and 131Y.

[0061] The lower etching solution supply section 132 includes a lower etching solution supply section 132X located on the first side wall 116 and a lower etching solution supply section 132Y located on the second side wall 117. The lower discharge hole 132a is formed in both the lower etching solution supply sections 132X and 132Y.

[0062] The bottom etching solution supply section 133 includes a bottom etching solution supply section 133X located on the first side wall 116 side of the bottom 115A, and a bottom etching solution supply section 133Y located on the second side wall 117 side of the bottom 115A. The bottom discharge hole 133a is formed in both the bottom etching solution supply sections 133X and 133Y.

[0063] The etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ discharged from each etching solution supply unit 130. In other words, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ discharged from the processing tank 110 by each etching solution supply unit 130.

[0064] Adjusting the discharge rate of etching solution LQ includes keeping the discharge rate of etching solution LQ constant, increasing the discharge rate of etching solution LQ, decreasing the discharge rate of etching solution LQ, and setting the discharge rate of etching solution LQ to zero. In the first embodiment, the etching solution discharge rate adjustment unit 135 switches the supply and stop of etching solution LQ from the etching solution supply unit 130 to the processing layer 110 for each etching solution supply unit 130. In other words, the etching solution discharge rate adjustment unit 135 switches the supply and stop of etching solution LQ from the etching solution supply source 134 to the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133 for each etching solution supply unit 130.

[0065] Specifically, etching solution discharge volume adjustment units 135 are provided in the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133, respectively. In addition, multiple supply pipes P2 are provided in the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133, respectively. One end of each supply pipe P2 is connected to the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133, respectively. The other end of each supply pipe P2 is connected to a common pipe P1. The common pipe P1 is connected to an etching solution supply source 134.

[0066] As shown in Figure 2, the etching solution discharge volume adjustment unit 135 includes an etching solution flow rate adjustment mechanism 136. Each etching solution flow rate adjustment mechanism 136 is located in the supply piping P2. The etching solution flow rate adjustment mechanism 136 supplies the etching solution LQ supplied from the etching solution supply source 134 and the common piping P1 to the corresponding etching solution supply unit 130 through the corresponding supply piping P2. The etching solution flow rate adjustment mechanism 136 also adjusts the discharge volume of the etching solution LQ discharged from the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133, respectively. In other words, the etching solution flow rate adjustment mechanism 136 adjusts the discharge volume of the etching solution LQ discharged to the processing tank 110 by the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133, respectively. In the first embodiment, the etching solution flow rate adjustment mechanism 136 switches between supplying and stopping the supply of etching solution LQ to the processing tank 110 from the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133, respectively. In other words, in the first embodiment, the etching solution flow rate adjustment mechanism 136 switches between supplying and stopping the supply of etching solution LQ from the etching solution supply source 134 to the upper etching solution supply unit 131, the lower etching solution supply unit 132, and the bottom etching solution supply unit 133.

[0067] Specifically, as shown in Figure 2, the etching solution flow rate adjustment mechanism 136 includes a flow meter a1, an adjustment valve a2, and a valve a3. The flow meter a1, adjustment valve a2, and valve a3 are arranged in this order in the supply pipe P2 from upstream to downstream.

[0068] Flow meter a1 measures the flow rate of etching solution LQ flowing through supply pipe P2. Adjustment valve a2 adjusts the flow rate of etching solution LQ flowing through supply pipe P2 by adjusting the opening degree of supply pipe P2, thereby adjusting the discharge amount of etching solution LQ supplied from etching solution supply unit 130 into processing tank 110. Adjustment valve a2 also adjusts the discharge amount of etching solution LQ based on the measurement result of flow meter a1. For example, a mass flow controller may be provided instead of flow meter a1 and adjustment valve a2. Valve a3 opens and closes supply pipe P2. In other words, valve a3 switches between supplying and stopping the supply of etching solution LQ from etching solution supply unit 130 into processing tank 110. The etching solution flow rate adjustment mechanism 136 may include a filter to remove foreign matter from the etching solution LQ.

[0069] Returning to Figure 1, the drainage section 150 discharges the etching solution LQ collected in the outer tank 114 via the drainage pipe P5. Specifically, the drainage pipe 151 is connected to the outer tank 114. The drainage pipe 151 is then positioned in the drainage pipe P5. The drainage section 150 includes, for example, a valve to close or open the flow path of the drainage pipe P5.

[0070] The bubble supply unit 140 is located inside the processing tank 110. The bubble supply unit 140 supplies gas (inert gas) supplied from the bubble discharge amount adjustment unit 145 to the etching solution LQ in the processing tank 110. Specifically, the bubble supply unit 140 supplies inert gas bubbles BB to the etching solution LQ in the processing tank 110. The inert gas is, for example, nitrogen gas (N2). However, the inert gas may also be argon gas (Ar).

[0071] As shown in Figure 2, the bubble supply unit 140 includes at least one bubble supply pipe 142. In the first embodiment, the bubble supply unit 140 includes a plurality of bubble supply pipes 142. In the example in Figure 1, the bubble supply unit 140 includes eight bubble supply pipes 142. The number of bubble supply pipes 142 is not particularly limited. The bubble supply pipes 142 are, for example, bubbler pipes.

[0072] The material of the bubble supply tube 142 is quartz or synthetic resin.

[0073] As shown in Figures 1 and 2, each of the multiple bubble supply pipes 142 has multiple bubble holes 141a. In the example in Figure 1, the bubble holes 141a face upward along the vertical direction Z. The bubble supply pipe 142 supplies bubbles BB into the etching solution LQ by discharging nitrogen gas supplied to the bubble adjustment unit 140 from the bubble holes 141a. In other words, the bubble supply pipe 142 receives nitrogen gas and supplies bubbles BB to the etching solution LQ.

[0074] Multiple bubble supply pipes 142 are arranged substantially parallel to each other along the width direction X in the processing tank 110. The bubble supply pipes 142 extend along the front-to-back direction Y. Multiple bubble holes 141a are formed in the bubble supply pipes 142 at intervals in the front-to-back direction X.

[0075] In detail, each of the multiple bubble supply tubes 142 supplies bubbles BB from each of the multiple bubble holes 141a to the etching solution LQ from below the substrate W when the substrate W is immersed in the etching solution LQ. Therefore, etching efficiency can be improved compared to when bubbles BB are not supplied. As a result, the substrate W immersed in the etching solution LQ can be effectively processed by the etching solution LQ.

[0076] The bubble discharge rate adjustment unit 145 adjusts the discharge rate of bubbles BB supplied to the etching solution LQ by adjusting the discharge rate of bubbles BB discharged from the bubble holes 141a (i.e., the discharge rate of nitrogen gas) for each bubble supply pipe 142. Adjusting the nitrogen gas discharge rate includes keeping the nitrogen gas discharge rate constant, increasing the nitrogen gas discharge rate, decreasing the nitrogen gas discharge rate, and setting the nitrogen gas discharge rate to zero. In the first embodiment, the bubble discharge rate adjustment unit 145 switches between supplying and stopping the supply of nitrogen gas to the bubble holes 141a for each bubble supply pipe 142. In other words, the bubble discharge rate adjustment unit 145 switches between supplying and stopping the supply of bubbles BB discharged from the bubble holes 141a to the processing tank 110 for each bubble supply pipe 142.

[0077] Specifically, as shown in Figure 2, the bubble discharge volume adjustment unit 145 includes multiple gas flow rate adjustment mechanisms 146, each corresponding to one of the multiple bubble supply pipes 142. Furthermore, each of the multiple supply pipes P4 is provided, each corresponding to one of the multiple gas flow rate adjustment mechanisms 146. One end of a supply pipe P4 is connected to the corresponding bubble supply pipe 142. The other end of a supply pipe P4 is connected to a common pipe P3. The common pipe P3 is connected to a gas supply source 143.

[0078] Multiple gas flow rate adjustment mechanisms 146 are each located in multiple supply pipes P4. The gas flow rate adjustment mechanism 146 supplies nitrogen gas supplied from the gas supply source 143 and common pipe P3 to the corresponding bubble supply pipe 142 through the corresponding supply pipe P4. The gas flow rate adjustment mechanism 146 also adjusts the flow rate of nitrogen gas supplied to the corresponding bubble supply pipe 142. As a result, the discharge amount of bubbles BB supplied to the etching solution LQ is adjusted for each bubble supply pipe 142. In the first embodiment, the gas flow rate adjustment mechanism 146 switches between supplying and stopping the supply of nitrogen gas to the corresponding bubble supply pipe 142. In other words, in the first embodiment, the gas flow rate adjustment mechanism 146 switches between supplying and stopping the supply of bubbles BB from the corresponding bubble supply pipe 142 to the etching solution LQ in the processing tank 110.

[0079] Specifically, as shown in Figure 2, the gas flow rate adjustment mechanism 146 includes an adjustment valve b1, a flow meter b2, a filter b3, and a valve b4. The adjustment valve b1, flow meter b2, filter b3, and valve b4 are arranged in this order in the supply pipe P4 from upstream to downstream.

[0080] The regulating valve b1 adjusts the flow rate of nitrogen gas flowing through the supply pipe P4 by adjusting the opening degree of the supply pipe P4, thereby adjusting the flow rate of nitrogen gas supplied to the bubble supply pipe 1. The flow meter b2 measures the flow rate of nitrogen gas flowing through the supply pipe P4. The regulating valve b1 adjusts the flow rate of nitrogen gas based on the measurement result of the flow meter b2. For example, a mass flow controller may be provided instead of the regulating valve b1 and flow meter b2.

[0081] Filter b3 removes foreign matter from the nitrogen gas flowing through supply pipe P4. Valve b4 opens and closes supply pipe P4. In other words, valve b4 switches the supply of nitrogen gas from supply pipe P4 to the bubble supply pipe 142 on and off.

[0082] Returning to Figure 1, the substrate processing apparatus 100 includes a control device 160. The control device 160 controls the processing of the substrate W. The processing of the substrate W includes the process of etching the substrate W. The control device 160 controls each component of the substrate processing apparatus 100. For example, the control device 160 controls the substrate holding unit 120, the etching solution supply unit 130, the bubble supply unit 140, and the drainage unit 150.

[0083] The control device 160 includes a control unit 161 and a storage unit 162. The control unit 161 includes a processor such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The storage unit 162 includes a storage device and stores data and computer programs. The processor of the control unit 161 executes the computer programs stored in the storage device of the storage unit 162 to control each component of the substrate processing device 100. For example, the storage unit 162 includes a main storage device such as a semiconductor memory and an auxiliary storage device such as a semiconductor memory and a hard disk drive. The storage unit 162 may also include removable media such as an optical disc. The storage unit 162 may also be, for example, a non-temporary computer-readable storage medium. The control device 160 may also include an input device and a display device.

[0084] The control unit 161 corresponds to the "control unit" of the present invention.

[0085] 1-3. An example of controlling the supply of etching solution and bubbles Next, with reference to Figure 3, an example of controlling the supply of etching solution LQ and bubbles BB will be described.

[0086] Figure 3 shows an example of the processing procedure for the etching solution supply unit 130 and the bubble supply unit 140.

[0087] The total processing time is, for example, 20 minutes. From the start of processing until 18 minutes, for example, steps S1, S2, and S3 are repeated in this order. From 18 to 20 minutes after the start of processing, step S4 is executed.

[0088] In procedure S1, the bottom etching solution supply units 133X and 133Y supply etching solution LQ to the substrate W. In the diagram, the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y is indicated by hatching on the bottom two blocks of the two stacked three-tiered blocks. The processing time for procedure S1 is, for example, 1 minute. In procedure S1, the bubble supply unit 140 supplies bubbles BB to the substrate X. In the diagram, the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y is indicated as "Bottom". Also in the diagram, the supply of bubbles BB to the substrate X is indicated as "N2 ON".

[0089] In step S2, the lower etching solution supply units 132X and 132Y supply etching solution LQ to the substrate W. In the diagram, the supply of etching solution LQ from the lower etching solution supply units 132X and 132Y is indicated by hatching on the two middle blocks of the two stacked three-tiered blocks. The processing time for step S2 is, for example, 1 minute. In step S2, the bubble supply unit 140 supplies bubbles BB to the substrate X. In the diagram, the supply of etching solution LQ from the lower etching solution supply units 132X and 132Y is indicated as "Middle".

[0090] In step S3, the upper etching solution supply units 131X and 131Y supply etching solution LQ to the substrate W. In the diagram, the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y is indicated by hatching on the top two blocks of the two stacked blocks in three layers. The processing time for step S3 is, for example, 1 minute. In step S3, the bubble supply unit 140 supplies bubbles BB to the substrate X. In the diagram, the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y is indicated by "Top".

[0091] After this, steps S1, S2, and S3 are repeated in that order until 18 minutes have passed since the start of processing. The bottom etching solution supply units 133X and 133Y supply the etching solution LQ to the substrate W while supplying bubbles BB to the substrate W for a total of 6 minutes.

[0092] The lower etching solution supply units 132X and 132Y supply etching solution LQ to the substrate W for a total of 6 minutes while supplying bubbles BB to the substrate W.

[0093] The upper etching solution supply units 131X and 131Y supply etching solution LQ to the substrate W for a total of 6 minutes while supplying bubbles BB to the substrate W.

[0094] From 18 to 20 minutes after the start of processing, procedure S4 is executed. Specifically, in procedure S4, the upper etching solution supply units 131X and 131Y supply etching solution LQ to the substrate W. The processing time for procedure S4 is 2 minutes. In procedure S4, the bubble supply unit 140 does not supply bubbles BB to the substrate X. In the diagram, the fact that bubbles BB are not supplied to the substrate X is represented as "N2 OFF".

[0095] The upper etching solution supply units 131X and 131Y supply etching solution LQ to substrate W for a further 2 minutes without supplying bubbles BB to substrate X. In other words, the upper etching solution supply units 131X and 131Y supply etching solution LQ to substrate W for a total of 8 minutes without supplying bubbles BB to substrate X.

[0096] 1-4. Inside the processing tank where the supply of etching solution and bubbles is controlled. Referring to Figures 4 and 5, the state of the inside of the processing tank 110, where the etching solution supply unit 130 and the bubble supply unit 140 control the supply of etching solution LQ and bubbles BB according to the processing procedure described above, will be explained.

[0097] Figure 4 shows the inside of the processing tank 110, where the supply of etching solution LQ and bubbles BB is controlled according to steps S1 to S3 shown in Figure 3.

[0098] Figures 4(a) to 4(c) show how the supply of etching solution LQ and bubbles BB is controlled in the early stages of the process (for example, from 1 to 3 minutes after the start of the process).

[0099] As shown in Figure 4(a), in procedure S1, bubbles BB are supplied from the bottom of the processing tank 110 by the bubble supply unit 140. The etching solution LQ is supplied from the bottom etching solution supply units 133X and 133Y from a position slightly closer to the side wall at the bottom of the processing tank 110, towards the center of the lower part of the substrate W. The flow of the etching solution LQ, shown by the dashed line, supplied from the bottom etching solution supply units 133X and 133Y is altered by bubbles BB. In other words, the flow of etching solution LQ is diffused by bubbles BB. Therefore, the etching solution LQ is easily supplied to the center of the lower part of the substrate W and its surrounding areas.

[0100] As shown in Figure 4(b), in step S2, bubbles BB are supplied from the bottom of the processing tank 110 by the bubble supply unit 140. The etching solution LQ is supplied by the lower etching solution supply units 132X and 132Y from a height approximately midway between the heights of the first side wall 116 and the second side wall 117, slightly diagonally upward toward the middle part of the substrate W. The flow of the etching solution LQ, shown by the dashed line, supplied from the lower etching solution supply units 132X and 132Y is altered by bubbles BB. In other words, the flow of etching solution LQ is diffused by bubbles BB. Therefore, the etching solution LQ is easily supplied to the middle part and its periphery on the substrate W.

[0101] As shown in Figure 4(c), in step S3, bubbles BB are supplied from the bottom of the processing tank 110 by the bubble supply unit 140. The etching solution LQ is supplied diagonally upward toward the top of the substrate W from a position slightly above the midpoint of the height of the first side wall 116 and the second side wall 117 by the upper etching solution supply units 131X and 131Y. The flow of the etching solution LQ, shown by the dashed line supplied from the upper etching solution supply units 131X and 131Y, is altered by bubbles BB. In other words, the flow of the etching solution LQ is diffused by bubbles BB. Therefore, the etching solution LQ is easily supplied to the outer sides of the top of the substrate W and its surrounding areas.

[0102] Near the surface of the etching solution LQ, bubbles BB supplied from the bubble supply unit 140 at this time, as well as bubbles BB supplied from the bubble supply unit 140 up to this time, have accumulated. The bubbles BB supplied from the bubble supply unit 140 up to this time are the bubbles BB that float near the surface of the etching solution LQ before overflowing into the outer tank 114. In other words, there are more bubbles BB near the surface of the etching solution LQ than in the layers below the surface.

[0103] Refer to Figure 5. Figure 5 shows the inside of the processing tank 110, where the supply of etching solution LQ and bubbles BB is controlled according to procedure S4.

[0104] As shown in Figure 5(a), in step S4, the supply of bubbles BB is stopped. Therefore, no new bubbles BB are supplied from the lower layer of etching solution LQ. Etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y. Consequently, bubbles BB gradually decrease. The flow of etching solution LQ supplied from the upper etching solution supply units 131X and 131Y, shown by the dashed lines, becomes less susceptible to changes caused by bubbles BB. In other words, the flow of etching solution LQ is less likely to be diffused by bubbles BB. Therefore, fresh etching solution LQ is more easily supplied to the upper part of the substrate W.

[0105] As shown in Figure 5(b), in step S4, etching solution LQ free of air bubbles BB continues to be supplied from the lower etching solution supply units 132X and 132Y. This further reduces the amount of air bubbles BB. Therefore, the flow of etching solution LQ supplied from the upper etching solution supply units 131X and 131Y, indicated by the dashed lines, becomes less susceptible to changes caused by air bubbles BB. In other words, the flow of etching solution LQ becomes less likely to be diffused by air bubbles BB. Consequently, fresh etching solution LQ is more easily supplied to the upper part of the substrate W.

[0106] As shown in Figure 5(c), in step S4, etching solution LQ free of air bubbles BB is continuously supplied from the lower etching solution supply units 132X and 132Y. As a result, for example, air bubbles BB are almost completely eliminated. Therefore, the flow of etching solution LQ supplied from the upper etching solution supply units 131X and 131Y, indicated by the dashed lines, is hardly affected by air bubbles BB. In other words, the flow of etching solution LQ is hardly diffused by air bubbles BB. Consequently, fresh etching solution LQ is more easily supplied concentratedly to the upper part of the substrate W. In this state, the continuous supply of etching solution LQ to the upper part of the substrate W improves the etching rate of the substrate W.

[0107] 1-5. Uniformity of etching within the plane of the substrate Next, with reference to Figures 6(a) to 7(b), the uniformity of etching within the plane of the substrate W will be explained.

[0108] Refer to Figures 6(a) and 6(b). Figures 6(a) and 6(b) are map images MP1 and MP2 showing the uniformity of etching in the plane of the substrate W when the supply of etching solution LQ and bubbles BB is controlled according to procedures S1 and S2.

[0109] Etching uniformity is calculated based on the etching rate determined for each area of ​​the substrate W, which is divided into sections. The etching rate is the amount of etching divided by the etching time. Areas with high etching uniformity have a high etching rate and are easily etched. Areas with low etching uniformity have a low etching rate and are difficult to etch.

[0110] In map image MP1, denser dots indicate higher etching uniformity. White areas without dots represent the areas with the lowest etching uniformity. While map images MP1, MP2, MP3, and MP4 actually exhibit a gradient of etching uniformity, they are simplified to show four levels. The same applies to map images MP2, MP3, and MP4, which will be discussed later.

[0111] Figure 6(a) is a map image MP1 showing the uniformity of etching in the plane of the substrate W when etching solution LQ is continuously supplied from the bottom etching solution supply units 133X and 133Y while bubbles BB are supplied, as in procedure S1.

[0112] As shown in Figure 6(a), in the map image MP1, the etching uniformity is highest near the center of the bottom of the substrate W. Subsequently, the peripheral areas near the center of the bottom of the substrate W also have many regions with relatively high etching uniformity.

[0113] Furthermore, there are areas on both outer edges of the upper part of substrate W where the etching uniformity is lowest. This may be due to the distance from the bottom etching solution supply section 133X, 133Y.

[0114] Figure 6(b) is a map image MP2 showing the uniformity of etching in the plane of the substrate W when the etching solution LQ is continuously supplied from the lower etching solution supply units 132X and 132Y while bubbles BB are being supplied, as in procedure S2.

[0115] As shown in Figure 6(b), in the map image MP2, the etching uniformity is highest in the middle portion of the substrate W. Subsequently, the peripheral portion of the middle portion of the substrate W also has many areas with relatively high etching uniformity.

[0116] Furthermore, there is an area at the very top of the substrate W where the etching uniformity is lowest. This may be due to the distance from the lower etching solution supply section 132X, 132Y.

[0117] Refer to Figures 7(a) and 7(b). Figures 7(a) and 7(b) are map images MP3 and MP4 showing the uniformity of etching in the plane of the substrate W when the supply of etching solution LQ and bubbles BB is controlled according to procedures S3 and S4.

[0118] Figure 7(a) is a map image MP3 showing the uniformity of etching in the plane of the substrate W when etching solution LQ is continuously supplied from the upper etching solution supply units 131X and 131Y while bubbles BB are supplied, as in procedure S3.

[0119] As shown in Figure 7(a), in the map image MP3, the etching uniformity is highest on both outer edges of the upper part of substrate W. Subsequently, the peripheral areas on both outer edges of the upper part of substrate W also have many regions with relatively high etching uniformity.

[0120] Thus, by supplying the etching solution LQ during the period when bubbles BB are being supplied, etching uniformity can be improved compared to when only the etching solution LQ is supplied without bubbles BB. Furthermore, when only the etching solution LQ is supplied without bubbles BB, the region with a high etching rate is narrower than when the etching solution LQ is supplied during the period when bubbles BB are being supplied.

[0121] Here, the inventors discovered that even though etching solution LQ is supplied during the period when bubbles BB are being supplied, there are regions with low etching rates. These regions are particularly near the center of the upper part of the substrate. As shown in Figure 7(a), the central part of the upper part of the substrate W has a low etching rate. Therefore, the central part of the upper part of the substrate W has the lowest etching uniformity.

[0122] Furthermore, in Figure 7(a), the areas with the lowest etching uniformity are also located on both outer sides of the upper part of the substrate W. This may be due to their distance from the upper etching solution supply sections 131X and 131Y.

[0123] Figure 7(b) is a map image MP4 showing the uniformity of etching in the plane of the substrate W when the supply of bubbles BB is stopped, as in procedure S4, and the etching solution LQ continues to be supplied from the upper etching solution supply units 131X and 131Y.

[0124] As shown in Figure 7(b), in the map image MP4, the region with the highest etching uniformity is located on both outer sides of the upper part of the substrate W. In addition, the region with the highest etching uniformity extends to the central part of the upper part of the substrate W. Furthermore, the region with the highest etching uniformity extends to the very top of the substrate W and its surrounding areas.

[0125] Thus, it can be seen that the etching rate on the upper part of the substrate W is improved when the supply of etching solution LQ continues from the upper etching solution supply units 131X and 131Y while the supply of bubbles BB is stopped. Therefore, it can be seen that etching uniformity is improved by performing procedure S4 after the above-described procedures S1, S2 and S3.

[0126] 1-6. Substrate processing method according to the first embodiment Next, the substrate processing method according to the first embodiment will be described with reference to Figure 8. The substrate processing method is performed by the substrate processing apparatus 100. Figure 8 is a flowchart of the substrate processing method according to the first embodiment.

[0127] As shown in Figure 8, the substrate processing method includes steps ST1 to ST10. Steps ST1 to ST10 are performed under the control of the control unit 161.

[0128] (Step ST1: Bubble supply process) First, in step ST1, the bubble supply unit 140 starts supplying a plurality of bubbles BB to the etching solution LQ stored in the processing tank 110. Step ST1 corresponds to an example of the "bubble supply process" of the present invention.

[0129] (Step ST2: Etching solution supply process) Next, in step ST2, the supply of etching solution LQ from all etching solution supply units 130 to the etching solution LQ stored in the processing tank 110 is started. The etching solution LQ is supplied heated to a temperature suitable for etching (for example, 90 to 100 degrees Celsius). The temperature of the etching solution LQ is not limited to this example, but the temperature of the etching solution LQ is higher than the temperature of the outside air, i.e., the temperature inside the chamber housing the processing tank 110. By supplying etching solution LQ from all etching solution supply units 130, the temperature of the etching solution LQ stored in the processing tank 110 can be made uniform.

[0130] (Step ST3: Immersion process) Next, in step ST3, the substrate holding unit 120 immerses the substrate W in the etching solution LQ stored in the processing tank 110. Step ST3 corresponds to an example of the "immersion step" of the present invention.

[0131] Next, in steps ST4 to ST6, the behavior of the bubbles BB is controlled by supplying the etching solution LQ from the etching solution supply unit 130 to the substrate W while switching the etching solution supply unit 130.

[0132] (Step ST4: Bottom etching solution supply process (etching solution discharge volume adjustment process)) Specifically, in step ST4, etching solution LQ is supplied from the bottom etching solution supply units 133X and 133Y toward the substrate W. That is, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y toward the substrate W continues. In addition, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y toward the substrate W is stopped.

[0133] Step ST4 corresponds to the procedure S1 described above. Step ST4 corresponds to an example of the "etching solution supply process" of the present invention. Furthermore, Step ST4 corresponds to an example of the etching solution discharge amount adjustment process.

[0134] (Step ST5: Lower etching solution supply process (etching solution discharge volume adjustment process)) In step ST5, etching solution LQ is supplied from the lower etching solution supply units 132X and 132Y toward the substrate W. Specifically, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the lower etching solution supply units 132X and 132Y toward the substrate W begins. The etching solution discharge volume adjustment unit 135 also adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y toward the substrate W remains stopped. Furthermore, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y toward the substrate W is stopped.

[0135] Step ST5 corresponds to procedure S2 described above. Step ST5 corresponds to an example of the "etching solution supply process" of the present invention. Furthermore, Step ST5 corresponds to an example of the etching solution discharge amount adjustment process.

[0136] (Step ST6: Upper etching solution supply process (etching solution discharge volume adjustment process)) In step ST6, etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y toward the substrate W. Specifically, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y toward the substrate W begins. The etching solution discharge volume adjustment unit 135 also adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y toward the substrate W remains stopped. Furthermore, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the lower etching solution supply units 132X and 132Y toward the substrate W is stopped.

[0137] Step ST6 corresponds to procedure S3 described above. Step ST6 corresponds to an example of the "etching solution supply process" of the present invention. Furthermore, Step ST6 corresponds to an example of the etching solution discharge amount adjustment process.

[0138] In step ST7, the control unit 161 determines whether the processes described in steps ST4 to ST6 have been performed a predetermined number of times. The predetermined number of times is stored, for example, in the memory unit 162 of the control device 162. The predetermined number of times may also be input by the operator via an input means provided in the substrate processing device 100.

[0139] If the predetermined number of attempts has not been reached, return to step ST4. If the predetermined number of attempts has been reached, proceed to step ST8.

[0140] Step ST7 corresponds to an example of the "etching supply process" of the present invention. Step ST7 also corresponds to an example of the etching solution discharge amount adjustment process.

[0141] (Step ST8: Bubble supply process (Bubble adjustment process)) In step ST8, the bubble supply unit 140 adjusts the discharge of bubbles BB. Specifically, the bubble discharge amount adjustment unit 145 adjusts the discharge of bubbles BB. In step ST8, the amount of bubbles BB discharged is adjusted so that the amount of bubbles BB discharged during the period when etching solution LQ is discharged from the upper discharge hole 131a (the period during which step ST9 described later is performed) is less than the amount of bubbles BB discharged during the period when etching solution LQ is discharged from the lower discharge hole 132a (the period during which step ST6 described above is performed).

[0142] The "period during which etching solution LQ is discharged from the upper discharge port 131a" and the "period during which etching solution LQ is discharged from the lower discharge port 132a" are compared using periods of the same length. In other words, if the "period during which etching solution LQ is discharged from the upper discharge port 131a" is 2 minutes, then the "period during which etching solution LQ is discharged from the lower discharge port 132a" is also 2 minutes. In this case, the "period during which etching solution LQ is discharged from the lower discharge port 132a" is twice the period during which step ST6 is executed.

[0143] For example, in step ST8, the bubble supply unit 140 stops supplying bubbles BB. In other words, the amount of bubbles BB discharged during the period when the etching solution LQ is discharged from the upper discharge hole 131a in step ST9, which will be described later, is 0 or almost 0. The amount of bubbles BB discharged during this period when the etching solution LQ is discharged from the upper discharge hole 131a (the period during which step ST9, described later, is performed) is less than the amount of bubbles BB discharged during the period when the etching solution LQ is discharged from the lower discharge hole 132a.

[0144] Step ST8 is an example of the "bubble supply process" of the present invention. Step ST8 is an example of the "bubble discharge amount adjustment process" of the present invention.

[0145] In step ST9, etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y. This reduces the amount of bubbles BB in the processing tank 110. The etching solution LQ supplied from the upper etching solution supply units 131X and 131Y is supplied to the upper part of the substrate W without being affected by diffusion by bubbles BB. As a result, the etching rate on the upper part of the substrate W is improved. Once step ST9 is completed, the process proceeds to step ST10.

[0146] In step ST10, the substrate holding unit 120 lifts the substrate W from the etching solution LQ. This completes the substrate processing method.

[0147] 1-7. Effects of the First Embodiment As described above, according to the substrate processing apparatus 100 of the first embodiment, the substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 comprises a processing tank 110, a substrate holding unit 120, an etching solution supply unit 130, a bubble supply unit 140, and a control unit 161. The processing tank 110 stores an etching solution LQ for etching the substrate W. The substrate holding unit 120 holds the substrate W and immerses the substrate W in the etching solution LQ stored in the processing tank 110. The etching solution supply unit 130 is located in the processing tank 110 and supplies the etching solution LQ into the processing tank 110. The etching solution supply unit 130 has at least an upper discharge hole 131a and a lower discharge hole 132a. The direction in which the etching solution LQ is discharged from the upper discharge hole 131a is directed toward the upper part of the substrate W. The lower discharge port 132a is located below the upper discharge port 131a and discharges the etching solution LQ. The bubble supply unit 130 is located in the processing tank 110 and supplies multiple bubbles BB to the etching solution LQ from below the substrate W. Here, the bubbles BB supplied from the bubble supply unit 140 accumulate near the top of the processing tank 110, which may cause the temperature of the etching solution LQ near the top of the processing tank 110 to decrease. This decrease in the temperature of the etching solution LQ near the top of the processing tank 110 may cause the etching rate at the top of the substrate W to decrease.

[0148] Therefore, the substrate processing apparatus 100 according to the first embodiment is further configured as follows. The control unit 161 controls the processing of the substrate W. The control unit 161 controls the etching solution supply unit 130 to adjust the discharge amount of etching solution LQ so that, for a portion of the period during which the substrate W is etched, the amount of etching solution LQ discharged from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged from the lower discharge hole 132a. As a result, even if a situation occurs where air bubbles BB tend to accumulate near the top of the processing tank 110, the etching solution LQ is more reliably supplied to the top of the substrate W. Therefore, the etching solution LQ is more likely to etch the top of the substrate W. In other words, the etching rate on the top of the substrate W increases. As a result, the uniformity of etching within the plane of the substrate W is improved. Thus, the substrate processing apparatus 100 according to the first embodiment can reduce processing unevenness within the plane of the substrate W.

[0149] In the substrate processing apparatus 100, the processing tank 110 comprises a bottom portion 115A and a side wall portion 115B extending upward from the bottom portion 115A. The side wall portion 115A includes a first side wall 116 and a second side wall 117 facing the first side wall 116. The upper discharge hole 131a and the lower discharge hole 132a are provided on the side of the first side wall 116 and the side of the second side wall 117, respectively. In other words, the etching solution LQ is supplied to the upper part of the substrate W from both the side of the first side wall 116 and the side of the second side wall 117. This makes it easier for the etching solution to be supplied to the upper part of the substrate.

[0150] In the first embodiment, an etching solution supply pipe having an upper discharge hole 131a and an etching solution supply pipe having a lower discharge hole 132a are provided on the first side wall 116 and the second side wall 117, respectively. The upper discharge hole 131a and the lower discharge hole 132a may be directly provided on the first side wall 116 and the second side wall 117, respectively. The etching solution supply pipe having an upper discharge hole 131a and an etching solution supply pipe having a lower discharge hole 131b may be provided slightly away from the first side wall 116 and the second side wall 117, respectively.

[0151] Furthermore, the control unit 161 controls the etching solution supply unit 130 to adjust the discharge of etching solution LQ so that, for a portion of the period during which the substrate W is etched (for example, the remaining 2 minutes), the amount of etching solution LQ discharged from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged from the lower discharge hole 132a (discharge amount = 0). In addition, the control unit 161 controls the etching solution supply unit 130 to adjust the discharge of etching solution LQ so that, for a portion of the period during which the substrate W is etched (for example, the remaining 2 minutes), the amount of etching solution LQ discharged from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged from the bottom discharge hole 133a (discharge amount = 0). As a result, for at least a portion of the period during which the substrate W is etched, the etching solution LQ is more easily supplied to the upper part of the substrate W.

[0152] In the first embodiment, the etching solution supply pipe having a bottom discharge hole 133a is provided at the bottom 115A. The bottom discharge hole 133a may be provided directly at the bottom 115A. The etching solution supply pipe having a bottom discharge hole 133a may be provided a short distance from the bottom 115A.

[0153] In the substrate processing apparatus 100, the control unit 161 controls the etching solution supply unit 130 to adjust the amount of etching solution LQ discharged so that the period during which etching solution LQ is discharged from the upper discharge hole 131a is longer than the period during which etching solution LQ is discharged from the lower discharge hole 132a. Therefore, it is easy to make the amount of etching solution LQ discharged from the upper discharge hole 131a greater than the amount of etching solution LQ discharged from the lower discharge hole 132a.

[0154] Furthermore, the control unit 161 controls the etching solution supply unit 130 to adjust the amount of etching solution LQ discharged so that the period during which etching solution LQ is discharged from the upper discharge hole 131a is longer than the period during which etching solution LQ is discharged from the bottom discharge hole 133a. Therefore, it is easy to make the amount of etching solution LQ discharged from the upper discharge hole 131a greater than the amount of etching solution LQ discharged from the bottom discharge hole 133a.

[0155] According to the substrate processing method of the first embodiment, the substrate processing method is a method for processing a substrate. The substrate processing method comprises an immersion step (e.g., step ST3), an etching solution supply step (e.g., steps ST2, ST4, ST5, ST6, ST9), and a bubble supply step (steps ST1, ST8). In the immersion step, in step ST3, the substrate W held in the substrate holding part 120 is immersed in the etching solution LQ stored in the processing tank 110. In the etching solution supply step, in steps ST4 to ST6, the etching solution LQ is supplied to the inside of the processing tank 110 in which the substrate W is immersed. In the bubble supply step, as step ST1, during the execution period of steps ST4 to ST6, a plurality of bubbles BB are supplied to the inside of the processing tank 110 in which the substrate W is immersed. As bubbles BB are discharged, a situation is created in which bubbles tend to accumulate near the top of the processing tank 110. In the etching solution supply process, during step ST9, the amount of etching solution LQ discharged is adjusted so that, for a portion of the period during which the substrate W is etched (the period during which step ST9 is performed), the amount of etching solution LQ discharged toward the upper part of the substrate W is greater than the amount of etching solution LQ discharged toward the lower part of the substrate W. This ensures that even if air bubbles BB tend to accumulate near the top of the processing tank 110, the etching solution LQ is reliably supplied to the upper part of the substrate W. Therefore, the etching solution LQ can more easily etch the upper part of the substrate W. In other words, the etching rate on the upper part of the substrate W increases. As a result, the uniformity of etching within the plane of the substrate W is improved. Thus, the substrate processing method according to the first embodiment can reduce processing unevenness within the plane of the substrate W.

[0156] 2. Second Embodiment 2-1. An example of controlling the supply of etching solution and bubbles In the first embodiment described above, the control unit 161 had to adjust the discharge rate of the etching solution LQ so that the amount of etching solution LQ discharged from the upper discharge hole 131a was greater than the amount of etching solution LQ discharged from the lower discharge hole 132a. However, the control performed by the control unit 161 is not limited to this.

[0157] In other words, in the second embodiment, the amount of etching solution LQ discharged from the upper discharge hole 131a and the amount of etching solution LQ discharged from the lower discharge hole 132a may be adjusted to be the same. The following will be explained with reference to the drawings.

[0158] Next, with reference to Figure 9, an example of controlling the supply of etching solution LQ and bubbles BB will be described.

[0159] Figure 9 shows an example of the processing procedure for the etching solution supply unit 130 and the bubble supply unit 140 according to the second embodiment.

[0160] The total processing time is, for example, 18 minutes. Steps S1, S2, and S3 are repeated in this order until the processing time is complete. Note that the etching solution supply procedure is not limited to the order of steps S1, S2, and S3.

[0161] In step S1, the bottom etching solution supply units 133X and 133Y supply the etching solution LQ to the substrate W. The processing time for step S1 is, for example, 1 minute. In step S1, the bubble supply unit 140 supplies bubbles BB to the substrate X.

[0162] In step S2, the lower etching solution supply units 132X and 132Y supply etching solution LQ to the substrate W. The processing time for step S2 is, for example, 1 minute. In step S2, the bubble supply unit 140 supplies bubbles BB to the substrate X.

[0163] In step S3, the upper etching solution supply units 131X and 131Y supply etching solution LQ to the substrate W. The processing time for step S3 is, for example, 1 minute. In step S3, the bubble supply unit 140 does not supply bubbles BB to the substrate X. That is, in step S3, the upper etching solution supply units 131X and 131Y supply etching solution LQ to the substrate W for a total of 1 minute without supplying bubbles BB to the substrate X.

[0164] After this, steps S1, S2, and S3 are repeated in that order until the end of the processing time. Specifically, the bottom etching solution supply units 133X and 133Y supply the etching solution LQ to the substrate W while supplying bubbles BB to the substrate W for a total of 6 minutes.

[0165] The lower etching solution supply units 132X and 132Y supply etching solution LQ to the substrate W for a total of 6 minutes while supplying bubbles BB to the substrate W.

[0166] The upper etching solution supply units 131X and 131Y supply etching solution LQ to the substrate W for a total of 6 minutes without supplying bubbles BB to the substrate W.

[0167] 2-2. Inside the processing tank where the supply of etching solution and bubbles is controlled. Referring to Figure 10, the state of the inside of the processing tank 110, where the etching solution supply unit 130 and the bubble supply unit 140 control the supply of etching solution LQ and bubbles BB according to the processing procedure described above, will be explained.

[0168] Figures 10(a) to 10(c) show the state inside the processing tank 110 in which the supply of etching solution LQ and bubbles BB is controlled according to steps S1 to S3 of the second embodiment.

[0169] As shown in Figure 10(a), in procedure S1, bubbles BB are supplied from the bottom of the processing tank 110 by the bubble supply unit 140. The etching solution LQ is supplied by the bottom etching solution supply units 133X and 133Y.

[0170] As shown in Figure 10(b), in step S2, bubbles BB are supplied from the bottom of the processing tank 110 by the bubble supply unit 140. The etching solution LQ is supplied by the lower etching solution supply units 132X and 132Y.

[0171] As shown in Figure 10(c), in step S3, the supply of bubbles BB is stopped. The etching solution LQ is supplied by the upper etching solution supply units 131X and 131Y.

[0172] In steps S1 and S2, the etching solution LQ is supplied while bubbles BB are accumulated in the processing tank 110. However, in step S3, the etching solution LQ is supplied to the top of the substrate W without any bubbles BB being supplied.

[0173] In this way, during the period when etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y, the etching solution LQ can be supplied to the upper part of the substrate W with minimal diffusion of the etching solution LQ flow due to air bubbles BB. This allows for concentrated supply of etching solution LQ to the upper part of the substrate W. As a result, the etching rate of the upper part of the substrate W can be improved.

[0174] 2-3. Substrate processing method according to the second embodiment Next, a substrate processing method according to the second embodiment will be described with reference to Figure 11. The substrate processing method is performed by the substrate processing apparatus 100. Figure 11 is a flowchart of the substrate processing method according to the second embodiment.

[0175] As shown in Figure 11, the substrate processing method includes steps ST11 to ST20. Steps ST11 to ST20 are performed under the control of the control unit 161.

[0176] (Step ST11: Bubble supply process) In step ST11, similar to step ST1 of the first embodiment, each bubble supply pipe 1 of the bubble supply unit 135 starts supplying a plurality of bubbles BB to the etching solution LQ stored in the processing tank 110. Step ST11 corresponds to an example of the "bubble supply process" of the present invention.

[0177] (Step ST12: Etching solution supply process) In step ST12, similar to step ST2 of the first embodiment, the supply of etching solution LQ is started from all etching solution supply units 130 to the etching solution LQ stored in the processing tank 110. The etching solution LQ is supplied in a state heated to a temperature suitable for etching. By supplying etching solution LQ from all etching solution supply units 130, the temperature of the etching solution LQ stored in the processing tank 110 can be made uniform. Step ST12 corresponds to an example of the "bubble supply step" of the present invention.

[0178] (Step ST13: Immersion process) In step ST13, similar to step ST3 of the first embodiment, the substrate holding unit 120 immerses the substrate W in the etching solution LQ stored in the processing tank 110. Step ST13 corresponds to an example of the "immersion step" of the present invention.

[0179] Next, in steps ST14 to ST17, the behavior of bubbles BB is controlled by supplying etching solution LQ from the etching solution supply unit 130 to the substrate W while switching the etching solution supply unit 130.

[0180] (Step ST14: Bottom etching solution supply process (etching solution discharge volume adjustment process)) In step ST4, etching solution LQ is supplied from the bottom etching solution supply units 133X and 133Y toward the substrate W. Specifically, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y toward the substrate W continues. In addition, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y toward the substrate W is stopped.

[0181] Step ST4 corresponds to the procedure S1 described above. Step ST14 corresponds to an example of the "etching solution supply process" of the present invention. Furthermore, Step ST14 corresponds to an example of the etching solution discharge amount adjustment process.

[0182] (Step ST15: Lower etching solution supply process (etching solution discharge volume adjustment process)) In step ST15, etching solution LQ is supplied from the lower etching solution supply units 132X and 132Y toward the substrate W. Specifically, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the lower etching solution supply units 132X and 132Y toward the substrate W begins. The etching solution discharge volume adjustment unit 135 also adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y toward the substrate W remains stopped. Furthermore, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y toward the substrate W is stopped.

[0183] Step ST15 corresponds to procedure S2 described above. Step ST15 corresponds to an example of the "etching solution supply process" of the present invention. Step ST15 also corresponds to an example of the etching solution discharge amount adjustment process.

[0184] (Step ST16: Bubble supply process (Bubble adjustment process)) In step ST16, the supply of bubbles BB from the bubble supply unit 140 toward the bottom of the substrate W is stopped. That is, the bubble discharge amount adjustment unit 145 adjusts the discharge amount of bubbles BB so that the supply of bubbles BB from the bubble supply unit 140 toward the bottom of the substrate W is stopped.

[0185] Step ST16 is included in the procedure S3 described above. Step ST16 corresponds to an example of the "bubble supply process" of the present invention. Step ST16 also corresponds to an example of the bubble discharge amount adjustment process.

[0186] (Step ST17: Upper etching solution supply process (etching solution discharge volume adjustment process)) In step ST17, etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y toward the substrate W. Specifically, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y toward the substrate W begins. The etching solution discharge volume adjustment unit 135 also adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the bottom etching solution supply units 133X and 133Y toward the substrate W remains stopped. Furthermore, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the lower etching solution supply units 132X and 132Y toward the substrate W is stopped.

[0187] Step ST17 corresponds to procedure S3 described above. Step ST17 corresponds to an example of the "etching solution supply process" of the present invention. Step ST17 also corresponds to an example of the etching solution discharge amount adjustment process.

[0188] (Step ST18: Etching solution supply process (Etching solution discharge volume adjustment process) (Number of supply cycles determination process)) In step ST18, the control unit 161 determines whether the processes described in steps ST14 to ST17 have been performed a predetermined number of times. The predetermined number of times is stored, for example, in the memory unit 162 of the control device 160. The predetermined number of times may also be input by the operator via an input means provided in the substrate processing device 100.

[0189] If the number of cycles has not been reached, the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y to the substrate W is stopped. Then the process proceeds to step ST19. Specifically, in step ST18, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y to the substrate W is stopped. Also, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the lower etching solution supply units 131X and 131Y to the substrate W remains stopped. Immediately after the execution of step ST19, step ST14 is executed. Therefore, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LW from the bottom etching solution supply units 133X and 133Y to the substrate W is started.

[0190] When a preset number of cycles is reached, the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y to the substrate W is stopped. Then, the process proceeds to step ST20. Specifically, in step ST18, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the upper etching solution supply units 131X and 131Y to the substrate W is stopped. In addition, the etching solution discharge volume adjustment unit 135 adjusts the discharge volume of etching solution LQ so that the supply of etching solution LQ from the lower etching solution supply units 131X and 131Y and the bottom etching solution supply units 133X and 133Y to the substrate W continues to be stopped.

[0191] Step ST18 corresponds to an example of the "etching supply process" of the present invention. Step ST18 also corresponds to an example of the etching solution discharge amount adjustment process.

[0192] (Step ST19: Bubble supply process (Bubble adjustment process)) In step ST19, the supply of bubbles BB from the bubble supply unit 140 toward the bottom of the substrate W is resumed. That is, the bubble discharge amount adjustment unit 145 adjusts the discharge amount of bubbles BB so that the supply of bubbles BB from the bubble supply unit 140 toward the bottom of the substrate W is resumed.

[0193] Step ST19 is included in the procedure S1 described above. Step ST19 corresponds to an example of the "bubble supply process" of the present invention. Step ST19 also corresponds to an example of the bubble adjustment process.

[0194] In step ST20, the substrate holding unit 120 lifts the substrate W from the etching solution LQ. This completes the substrate processing method.

[0195] 2-4. Effects of the Second Embodiment As described above, according to the substrate processing apparatus 100 of the second embodiment, the control unit 161 controls the etching solution supply unit 130 to switch between the discharge of etching solution LQ from the upper discharge hole 131a and the discharge of etching solution LQ from the lower discharge hole 132a and the bottom discharge hole 133a. At the same time, the control unit 161 controls the bubble supply unit 140 to adjust the discharge amount of multiple bubbles BB so that the amount of multiple bubbles BB discharged during the period when etching solution LQ is discharged from the upper discharge hole 131a is less than the amount of multiple bubbles BB discharged during the period when etching solution LQ is discharged from the lower discharge hole 132a. Furthermore, the control unit 161 controls the bubble supply unit 140 to adjust the discharge amount of multiple bubbles BB so that the amount of multiple bubbles BB discharged during the period when etching solution LQ is discharged from the upper discharge hole 131a is less than the amount of multiple bubbles BB discharged during the period when etching solution LQ is discharged from the bottom discharge hole 133a. As a result, during the period when the etching solution is discharged from the upper discharge hole 131a, the etching solution LQ directed toward the upper part of the substrate W is less likely to be dispersed by air bubbles BB. In other words, the etching solution LQ is supplied intensively to the upper part of the substrate W. Therefore, the etching rate at the upper part of the substrate W can be increased. As a result, the uniformity of etching within the plane of the substrate W is improved. Thus, the present invention can reduce processing unevenness within the plane of the substrate W.

[0196] In the substrate processing apparatus 100 according to the second embodiment, the control unit 161 controls the bubble supply unit 140 to stop the discharge of multiple bubbles BB during the period when etching solution LQ is discharged from the upper discharge hole 131a. As a result, during the period when the discharge of multiple bubbles BB is stopped, the etching solution LQ directed toward the upper part of the substrate W is less likely to be further dispersed by the bubbles BB. In other words, the etching solution LQ is more easily supplied to the upper part of the substrate W in a more concentrated manner. Therefore, the etching rate at the upper part of the substrate W can be further increased. As a result, the uniformity of etching within the plane of the substrate W can be further improved.

[0197] In the substrate processing method according to the second embodiment, the substrate processing method is a method for processing a substrate. The substrate processing method comprises an immersion step (e.g., step ST13), an etching solution supply step (e.g., steps ST12, ST14, ST15, ST17, ST18), and a bubble supply step (e.g., steps ST11, ST16, ST19). In the immersion step, in step ST3, the substrate W held in the substrate holding part 120 is immersed in an etching solution stored in the processing tank 110. In the etching solution supply step, in steps ST14, ST15, and ST17, an etching solution LQ is supplied into the processing tank 110 in which the substrate W is immersed. In the bubble supply step, as steps ST11 and ST19, a plurality of bubbles BB are supplied into the processing tank 110 in which the substrate W is immersed while steps ST14 and ST15 are being executed. The etching solution supply process switches between a process of discharging etching solution LQ toward the top of the substrate W (e.g., step ST17) and a process of discharging etching solution toward the bottom of the substrate (e.g., steps ST14, ST15) during the period when the substrate W is being etched. Along with this switch, the bubble supply process (e.g., step ST16) adjusts the amount of bubbles BB discharged so that the amount of bubbles discharged toward the top of the substrate W during the period when the etching solution is discharged toward the top of the substrate W (e.g., the period when step ST17 is performed) is less than the amount of bubbles BB discharged toward the bottom of the substrate (e.g., the period when steps ST14, ST15 are performed). As a result, during the period when the etching solution is discharged toward the top of the substrate W (e.g., the period when step ST17 is performed), the etching solution LQ directed toward the top of the substrate W is less likely to be dispersed by bubbles. In other words, the etching solution LQ is supplied intensively to the top of the substrate W. Therefore, the etching rate on the top of the substrate W can be increased. As a result, the uniformity of etching within the plane of the substrate W is improved. As described above, the substrate processing method according to the second embodiment can reduce processing unevenness within the plane of the substrate W.

[0198] The present invention is not limited to the embodiments described below and can be modified and implemented as follows.

[0199] (1) In the first and second embodiments described above, the processing layer 110 included an upper etching solution supply unit 131, a lower etching solution supply unit 132, and a bottom etching solution supply unit 133. However, the configuration of the processing layer 110 is not limited to these. That is, the processing layer 110 may include only the upper etching solution supply unit 131 and the lower etching solution supply unit 132. The processing layer 110 may also include only the upper etching solution supply unit 131 and the bottom etching solution supply unit 133.

[0200] (2) In the first and second embodiments described above, the upper etching solution supply unit 131 was a single etching solution supply pipe. Similarly, the lower etching solution supply unit 132 was a single etching solution supply pipe. However, the configuration of the upper etching solution supply unit 131 and the lower etching solution supply unit 132 is not limited to these. That is, the upper etching solution supply unit 131 may consist of multiple etching solution supply pipes. The lower etching solution supply unit 132 may consist of multiple etching solution supply pipes.

[0201] In the first and second embodiments described above, the bottom etching solution supply unit 133 consisted of multiple etching solution supply tubes. However, the bottom etching solution supply unit 133 may consist of a single etching solution supply tube.

[0202] (3) In the first and second embodiments described above, the processing procedure of the etching solution supply unit 130 and the bubble supply unit 140 was in the order of procedure S1, procedure S2, and procedure S3, but it may be in a different order.

[0203] Furthermore, in the first embodiment described above, procedure S4 was performed after performing procedures S1, S2, and S3 a predetermined number of times. However, procedure S4 may be performed while performing procedures S1, S2, and S3 a predetermined number of times. The number of times procedure S4 is performed does not have to be once.

[0204] Furthermore, in the first and second embodiments described above, for example, in step S1, the etching solution LQ was supplied from both the bottom etching solution supply units 133X and 133Y. However, in step S1, the etching solution LQ may be supplied from either the bottom etching solution supply units 133X and 133Y. Also, in step S1, the etching solution LQ may be supplied from the lower etching solution supply units 132X, 132Y and / or the bottom etching solution supply units 133X, 133Y. The same applies to steps S2 and S3.

[0205] (4) In the flowcharts shown in Figures 8 and 11 of the first and second embodiments described above, the supply of bubbles BB was started (step ST1), the supply of etching solution LQ was started (step ST2), and the substrate W was immersed in etching solution LQ (step ST3), but this order may be changed. Also, this order may be simultaneous.

[0206] (5) In the first embodiment described above, the discharge of etching solution LQ is adjusted so that, for a portion of the period during which the substrate W is etched (for example, the period during which step S4 is performed), the discharge amount of etching solution LQ discharged from the upper discharge hole 131a (for example, discharge amount = 20) is greater than the discharge amount of etching solution LQ discharged from the lower discharge hole 132a and the bottom discharge hole 133a, respectively (discharge amount = 0). This can also be rephrased as follows: That is, for the entire period during which the substrate W is etched, the discharge of etching solution LQ is adjusted so that the total discharge amount of etching solution LQ discharged from the upper discharge hole 131a (for example, total discharge amount = 80) is greater than the total discharge amount of etching solution LQ discharged from the lower discharge hole 132a and the bottom discharge hole 133a, respectively (for example, total discharge amount = 60).

[0207] The above-mentioned discharge volume of etching solution LQ is the value when the discharge volume of etching solution LQ per minute discharged from the upper discharge hole 131a, lower discharge hole 132a, and bottom discharge hole 133a is set to 10.

[0208] (6) In the first embodiment described above, the control unit 161 controlled the etching solution supply unit 130 to vary the supply amount of etching solution LQ and the supply time of etching solution LQ. However, embodiments of the present invention are not limited to this. That is, in the substrate processing apparatus 100, the control unit 161 may control the etching solution supply unit 130 to adjust the discharge amount of etching solution LQ such that the amount of etching solution LQ discharged per unit time from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged per unit time from the lower discharge hole 132a. For this reason, it is easy to make the discharge amount of etching solution LQ discharged from the upper discharge hole 131a greater than the discharge amount of etching solution discharged from the lower discharge hole 132a.

[0209] (7) In the first embodiment described above, the discharge of the etching solution LQ was adjusted so that, for a portion of the period during which the substrate W is etched (for example, the period during which step 4 is performed), the discharge amount of etching solution LQ discharged from the upper discharge hole 131a (for example, discharge amount = 20) was greater than the discharge amount of etching solution LQ discharged from the lower discharge hole 132a and the bottom discharge hole 133a, respectively (discharge amount = 0). However, embodiments of the present invention are not limited to this. That is, the discharge of the etching solution LQ may be adjusted so that, for the entire period during which the substrate W is etched, the discharge amount of etching solution LQ discharged from the upper discharge hole 131a is greater than the discharge amount of etching solution LQ discharged from the lower discharge hole 132a. Specifically, for example, the discharge amount of etching solution LQ per unit time discharged from the upper discharge hole 131a is greater than the discharge amount of etching solution LQ per unit time discharged from the lower discharge hole 132a. Therefore, at any point during the period in which the substrate W is etched, the amount of etching solution LQ discharged from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged from the lower discharge hole 132a.

[0210] (8) In the first embodiment described above, during the period in which steps 1 to 3 are repeated, the amount of etching solution LQ discharged from the upper discharge hole 131a, the lower discharge hole 132a, and the bottom discharge hole 133a is the same, and in the final step 4, the amount of etching solution LQ discharged from the upper discharge hole 131a exceeds the amount of etching solution LQ discharged from the lower discharge hole 132a and the bottom discharge hole 133a. However, the embodiments of the present invention are not limited to this. During the period in which steps 1 to 3 are repeated, the amount of etching solution LQ discharged from the upper discharge hole 131a may exceed the amount of etching solution LQ discharged from the lower discharge hole 132a and the bottom discharge hole 133a. In this case, step 4 may not be performed.

[0211] Refer to Figure 12. Figure 12 shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 8.

[0212] In steps S1 to S3, similar to steps S1 to S3 of the first embodiment described above, while bubbles BB are being supplied, etching solution LQ is supplied from the bottom etching solution supply unit 133X, 133Y, the lower etching solution supply unit 132X, 132Y, and the upper etching solution supply unit 131X, 131Y, respectively. The processing time for steps S1 and S2 is 1 minute each.

[0213] The processing time for procedure S3 is 1 minute and 20 seconds. The discharge rate per minute from the bottom discharge port 133a, the lower discharge port 132a, and the upper discharge port 131a is assumed to be 10. In this case, the sum of the discharge rates from the bottom discharge port 133a and the lower discharge port 132a is 60. The sum of the discharge rates from the upper discharge port 131a is 80.

[0214] Refer to Figure 13(a). Figure 13(a) is a map image MP3 showing the uniformity of etching in the plane of the substrate W when the supply of etching solution LQ and bubbles BB is controlled according to procedure S3 of the first embodiment.

[0215] Map image MP3 shows the etching uniformity when ejected from the upper ejection hole 131a with bubbles BB supplied for 6 minutes. In map image MP3, the etching uniformity is highest on both outer edges of the upper part of the substrate W. Next, the peripheral areas on both outer edges of the upper part of the substrate W also have many areas with relatively high etching uniformity. However, none of these areas extend to the center of the substrate W. Therefore, the central part of the upper part of the substrate remains the area with the lowest etching uniformity.

[0216] Refer to Figure 13(b). Figure 13(b) is a map image MP3A showing the uniformity of etching in the plane of the substrate W when the supply of etching solution LQ and bubbles BB is controlled according to procedure S3 of Modification 8.

[0217] Map image MP3A shows the etching uniformity when ejected from the upper ejection hole 131a with bubbles BB supplied for 8 minutes. In map image MP3A, the region with the highest etching uniformity on both outer edges of the upper part of the substrate W extends slightly towards the center of the substrate W. The region with relatively high etching uniformity in the peripheral areas on both outer edges of the upper part of the substrate W extends towards the center of the substrate W. As a result, the region with the lowest etching uniformity in the center of the upper part of the substrate W is small.

[0218] In this way, by making the amount of etching solution LQ discharged from the upper discharge hole 131a when bubbles BB are supplied greater than the amount of etching solution LQ discharged from the lower discharge hole 132a and the bottom discharge hole 133a, respectively, when bubbles BB are supplied, the etching rate in the center of the upper part of the substrate W can be improved.

[0219] (9) In the first and second embodiments described above, in step 1, a period was set during which the etching solution LQ was discharged from the bottom discharge hole 133a; in step 2, a period was set during which the etching solution LQ was discharged from the lower discharge hole 132a; and in step 3, a period was set during which the etching solution LQ was discharged from the upper discharge hole 131a. However, the embodiments of the present invention are not limited thereto.

[0220] Refer to Figure 14. Figure 14 shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 9.

[0221] Steps S1 to S3 each have a processing time of 1 minute. The total processing time is 18 minutes. In step S1, as in the first and second embodiments, the etching solution LQ is supplied from the bottom discharge hole 133a while bubbles BB are supplied. The amount of etching solution LQ discharged from the bottom discharge hole 133a in step S1 is 60.

[0222] Procedures S2 and S3 differ from those of the first and second embodiments. Specifically, in procedure S2, etching solution LQ is supplied from the upper discharge port 131a and the lower discharge port 123a while bubbles BB are supplied. In procedure S3, etching solution LQ is supplied from the upper discharge port 131a while bubbles BB are supplied. The discharge volume of etching solution LQ from the lower discharge port 132a in procedures S1 and S2 is 60. The discharge volume of etching solution LQ from the upper discharge port 131a in procedures S1 and S2 is 120.

[0223] Thus, the period during which etching solution LQ is supplied from the upper discharge port 131a is not limited to procedure S3. It may also be procedure S1 or procedure S2.

[0224] (10) In the first embodiment described above, the discharge of the etching solution LQ was adjusted so that, for a portion of the period during which the substrate W is etched (for example, the remaining 2 minutes), the amount of etching solution LQ discharged from the upper discharge hole 131a was greater than the amount of etching solution LQ discharged from the bottom discharge hole 133a (discharge amount = 0). However, embodiments of the present invention are not limited to this. That is, the discharge of the etching solution LQ may be adjusted so that, for the entire period during which the substrate W is etched, the amount of etching solution LQ discharged from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged from the bottom discharge hole 133a. Specifically, for example, the amount of etching solution LQ discharged per unit time from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged per unit time from the bottom discharge hole 132a. Therefore, at any point during the period in which the substrate W is etched, the amount of etching solution LQ discharged from the upper discharge hole 131a is greater than the amount of etching solution LQ discharged from the bottom discharge hole 132a.

[0225] (11) In the second embodiment described above, the control unit 161 controlled the bubble supply unit 140 to stop the discharge of multiple bubbles BB during the period when etching solution LQ was discharged from the upper discharge hole 131a. However, embodiments of the present invention are not limited to this. That is, in the substrate processing apparatus 100, the control unit 161 may control the bubble supply unit 140 to switch between the discharge of multiple bubbles BB and the cessation of the discharge of multiple bubbles BB during the period when etching solution LQ is discharged from the upper discharge hole 131a. This makes it possible to achieve both the diffusion effect of the flow of etching solution LQ due to the supply of multiple bubbles BB to the substrate W and the effect of concentrating the flow of etching solution LQ on the upper part of the substrate W due to the non-supply of multiple bubbles BB to the substrate W. As a result, the etching rate on the upper part of the substrate W can be effectively increased.

[0226] Specifically, refer to Figure 15. Figure 15 is a diagram showing an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 11.

[0227] Steps S1 to S3 each have a processing time of 1 minute, similar to the first and second embodiments described above. Steps S1 and S2, similar to the first and second embodiments described above, switch the supply of etching solution LQ from the bottom etching solution supply units 133X, 133Y and the lower etching solution supply units 132X, 132Y in that order, while supplying bubbles BB.

[0228] Step 3 differs from the first and second embodiments described above. Specifically, in Step 3, during the period when etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y, the supply and cessation of bubbles BB are switched, for example, every 15 seconds. Specifically, bubbles BB are supplied from 0 to 15 seconds. The supply of bubbles BB is stopped from 16 to 30 seconds. Bubbles BB are supplied from 17 to 45 seconds. The supply of bubbles BB is stopped from 46 to 60 seconds.

[0229] Note that this example is not limited to a configuration that switches the supply and stop of bubble BB every 15 seconds. Bubble BB may be supplied for 45 seconds and stopped for 15 seconds. Alternatively, bubble BB may be supplied for 15 seconds and stopped for 45 seconds. By changing the time during which the supply of bubble BB is stopped, the etching of the upper part of the substrate W can be controlled.

[0230] In this way, during the period when etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y, it is possible to achieve both the diffusion effect of the etching solution LQ flow due to the supply of multiple bubbles BB to the substrate W and the effect of concentrating the flow of etching solution LQ on the upper part of the substrate W due to the absence of multiple bubbles BB to the substrate W. As a result, the etching rate on the upper part of the substrate W can be effectively increased.

[0231] (12) In the second embodiment described above, the control unit 161 stopped supplying bubbles BB each time step 3 was performed during the period in which steps 1, 2, and 3 were repeated. However, the control to stop supplying bubbles BB during the period in which etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y is not limited to this. That is, the control unit 161 may perform control to stop supplying bubbles BB only during the period in which any step 3 is performed during the period in which etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y.

[0232] Refer to Figure 16. Figure 16 shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 12.

[0233] Procedures S1 to S3 each have a processing time of 1 minute. In procedures S1 to S3, while supplying bubbles BB, the supply of etching solution LQ is switched in the following order: bottom etching solution supply unit 133X, 133Y, lower etching solution supply unit 132X, 132Y, and upper etching solution supply unit 131X, 131Y. The total processing time is 18 minutes. Procedures S1 to S3 are repeated for the first 17 minutes from the start of processing. Only for the last minute (18 minutes) is the supply of bubbles BB stopped.

[0234] Furthermore, the period during which the supply of bubble BB is stopped is not limited to the last minute. For example, the supply of bubble BB may be stopped for a total of 2 minutes, at 9 minutes and 18 minutes. For example, it may be stopped for a total of 3 minutes, at 12 minutes, 15 minutes and 13 minutes.

[0235] In this way, during the period when etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y, it is possible to arbitrarily adjust the period during which the flow of etching solution LQ is diffused by the supply of multiple bubbles BB to the substrate W, and the period during which the flow of etching solution LQ is concentrated on the upper part of the substrate W by not supplying multiple bubbles BB to the substrate W. As a result, the etching rate on the upper part of the substrate W can be effectively increased.

[0236] (13) In Figure 1, the orientation of the discharge hole 132a3 of the etching solution supply unit 130 is not particularly limited. The upper etching solution supply units 131X, 131Y should direct the flow of etching solution LQ toward the upper part of the substrate W. The lower etching solution supply units 132X, 132Y should be positioned below the upper etching solution supply units 131X, 131Y. The bottom etching solution supply units 133X, 133Y should be positioned below the lower etching solution supply units 132X, 132Y. The orientation of the flow of etching solution LQ in the lower etching solution supply units 132X, 132Y and the bottom etching solution supply units 133X, 133Y is not particularly limited.

[0237] (14) In Figure 2, the etching solution flow rate adjustment mechanism 136 does not need to have a flow meter a1 and an adjustment valve a2. Also, the gas flow rate adjustment mechanism 146 does not need to have an adjustment valve b1, a flow meter b2, and a filter b3.

[0238] (15) In Figure 1, the mechanism for supplying bubbles BB is not limited to the bubbles supply pipe 1. For example, bubbles BB may be supplied from a plurality of holes provided in a perforated plate located at the bottom of the processing tank 110.

[0239] (16) In the first and second embodiments described above, it was explained that in the etching solution flow rate adjustment mechanism 136, when valve a3 opens and closes the supply pipe P2, valve a3 switches between supplying and stopping the etching solution LQ from the etching solution supply unit 130 to the processing tank 110. In this regard, the control unit 161 may control the etching solution discharge amount adjustment unit 165 to adjust in multiple stages the minute discharge amount (also called slow leak flow rate) that is discharged when the etching solution is adjusted so that no etching solution is discharged from at least one of the upper discharge hole 131a, lower discharge hole 132a, or bottom discharge hole 133a for all or part of the period during which the substrate W is etched.

[0240] Refer to Figure 17. Figure 17 shows an example of the processing procedure for the etching solution supply unit and the bubble supply unit according to Modification 16.

[0241] Steps S1 to S4 are generally the same as steps S1 to S4 in the first embodiment. In this example, even when valve a3 is closing the supply pipe P2, a small amount of etching solution LQ is released from the upper discharge port 131a, the lower discharge port 132a, or the bottom discharge port 133a. In the illustration, the presence of minute discharge (slow leak) is indicated as "SL".

[0242] In steps S1 to S3, when valve a3 closes supply pipe P2, etching solution LQ is discharged at the normal small discharge rate (slow leak flow rate). Specifically, in step S1, when etching solution LQ is supplied from the bottom etching solution supply units 133X and 133Y, etching solution LQ is discharged at the normal small discharge rate (slow leak flow rate) from the upper etching solution supply units 131X and 131Y and the lower etching solution supply units 132X and 132Y. In step S2, when etching solution LQ is supplied from the lower etching solution supply units 132X and 132Y, etching solution LQ is discharged at the normal small discharge rate (slow leak flow rate) from the upper etching solution supply units 131X and 131Y and the bottom etching solution supply units 133X and 133Y. In step S3, when etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y, etching solution LQ is discharged from the lower etching solution supply units 132X and 132Y and the bottom etching solution supply units 133X and 133Y at a normal minute discharge rate (slow leak flow rate).

[0243] In contrast, in step S4, when etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y, etching solution LQ is discharged from the lower etching solution supply units 132X and 132Y and the bottom etching solution supply units 133X and 133Y at a rate greater than the normal minute discharge rate (slow leak flow rate) (higher level).

[0244] Here, with reference to Figure 18, the uniformity of etching when the minute discharge amount (slow leak flow rate) in steps S3 and S4 changes will be explained. Figures 18(a) and 18(b) are map images showing the uniformity of etching in the plane of the substrate when the supply of etching solution and bubbles is controlled according to steps S3 and S4 of the modified example 16.

[0245] Figure 18(a) shows the map image MP4 after performing procedure S3. The map image MP4 is the same as the one described in the first embodiment.

[0246] Figure 18(b) shows map image MP5 after performing procedure S4. In map image MP5, the region with the highest etching rate is slightly larger than in map image MP4. The area surrounding the region with the highest etching rate is also slightly larger than in map image MP4.

[0247] Thus, in step S4, in the region where etching solution LQ is supplied from the upper etching solution supply units 131X and 131Y, the etching rate can be improved by increasing the amount of etching solution LQ discharged from the lower etching solution supply units 132X and 132Y and the bottom etching solution supply units 133X and 133Y in a minute discharge amount (slow leak flow rate) to a higher level than usual.

[0248] Note that the timing for adjusting the minute discharge rate (slow leak flow rate) is not limited to step S4, but can be any of steps S1 to S3. By adjusting the minute discharge rate (slow leak flow rate), the etching rate can be locally improved depending on the location where the etching solution is discharged at that minute discharge rate (slow leak flow rate).

[0249] This allows the etching solution discharge volume adjustment unit 165 to adjust whether or not etching solution LQ is discharged from at least one of the upper discharge holes 131a, lower discharge holes 132a, or bottom discharge holes 133a, as well as to adjust the minute discharge volume when only a small amount of etching solution LQ is discharged. Therefore, the etching rate within the plane of the substrate W can be precisely adjusted. As a result, the uniformity of etching within the plane of the substrate W can be precisely adjusted.

[0250] (17) The first embodiment, the second embodiment, and each modified embodiment described in (1) to (16) above may be further modified as appropriate by substituting or combining each component with the components of other modified embodiments. [Industrial applicability]

[0251] The present invention relates to a substrate processing apparatus and a substrate processing method, and has industrial applicability. [Explanation of Symbols]

[0252] 100 Substrate Processing Equipment 110 Processing tanks 112 Inner tank 114 Outer tank 115A bottom 115B Side wall part 116 First side wall 117 Second side wall 120 Board holding part 122 Main board 124 Holding rod 126 Lifting Unit 130 Etching supply unit 131 Upper etching supply section 131a Upper discharge hole 132 Lower etching supply section 132a Lower discharge hole 133 Bottom etching supply section 133a Bottom discharge hole 134 Etching solution supply source 135 Etching discharge volume adjustment section 136 Etching solution flow rate adjustment mechanism 140 Bubble supply unit 141 Bubble holes 142 Bubble supply pipe 143 Gas supply source 145 Bubble discharge volume adjustment section 146 Gas flow rate adjustment mechanism 150 Drainage section 151 Drainage piping 160 Control device 161 Control Unit 162 Storage section a1 flow meter a2 Adjustment valve a3 valve b1 Adjustment valve b2 flow meter b3 filter b4 valve p1 Common Piping p2 supply piping p3 Common Piping p4 Supply piping p5 Drainage piping BB bubbles LQ Etching Solution MP1~MP5 Mapping Images W board

Claims

1. A substrate processing apparatus for processing substrates, A processing tank for storing an etching solution for etching the aforementioned substrate, A substrate holding unit that holds the substrate and immerses the substrate in the etching solution stored in the processing tank, An etching solution supply unit arranged in the processing tank and supplying the etching solution into the processing tank, the etching solution supply unit having at least a first discharge hole in which the direction from which the etching solution is discharged is directed toward the upper part of the substrate, and a second discharge hole arranged below the first discharge hole and for discharging the etching solution, A bubble supply unit is placed in the processing tank and supplies a plurality of bubbles to the etching solution from below the substrate, The system includes a control unit that controls the processing of the substrate, The control unit, Controlling the etching solution supply unit to adjust the amount of etching solution discharged from the first discharge hole so that, for all or part of the period during which the substrate is etched, the amount of etching solution discharged from the second discharge hole is greater. A substrate processing apparatus characterized by the following.

2. In the substrate processing apparatus according to claim 1, The processing tank comprises a bottom and a side wall portion extending upward from the bottom, The side wall portion includes a first side wall portion and a second side wall portion facing the first side wall portion. The first discharge hole and the second discharge hole are provided on the first side wall side and the second side wall side, respectively. A substrate processing apparatus characterized by the following.

3. In the substrate processing apparatus according to claim 2, The etching solution supply unit has a third discharge hole located at the bottom, and discharges the etching solution from the third discharge hole downwards from the substrate. The control unit controls the etching solution supply unit to adjust the discharge of the etching solution so that, for all or part of the period during which the substrate is etched, the amount of etching solution discharged from the first discharge hole is greater than at least one of the amount of etching solution discharged from the second discharge hole and the amount of etching solution discharged from the third discharge hole. A substrate processing apparatus characterized by the following.

4. In the substrate processing apparatus according to claim 1, The control unit controls the etching solution supply unit to adjust the amount of etching solution discharged such that the period during which the etching solution is discharged from the first discharge hole is longer than the period during which the etching solution is discharged from the second discharge hole. A substrate processing apparatus characterized by the following.

5. In the substrate processing apparatus according to claim 1, The control unit controls the etching solution supply unit to adjust the amount of etching solution discharged so that the amount of etching solution discharged per unit time from the first discharge port is greater than the amount of etching solution discharged per unit time from the second discharge port. A substrate processing apparatus characterized by the following.

6. A substrate processing apparatus for processing substrates, A processing tank for storing an etching solution for etching the aforementioned substrate, A substrate holding unit that holds the substrate and immerses the substrate in the etching solution stored in the processing tank, An etching solution supply unit arranged in the processing tank and supplying the etching solution into the processing tank, the etching solution supply unit having at least a first discharge hole in which the direction from which the etching solution is discharged is directed toward the upper part of the substrate, and a second discharge hole arranged below the first discharge hole and for discharging the etching solution, A bubble supply unit is placed in the processing tank and supplies a plurality of bubbles to the etching solution from below the substrate, It comprises a control unit that controls processing on the substrate, The control unit, The etching solution supply unit is controlled to switch between the discharge of the etching solution from the first discharge hole and the discharge of the etching solution from the second discharge hole, The bubble supply unit is controlled to adjust the amount of bubbles discharged such that the amount of bubbles discharged during the period when the etching solution is discharged from the first discharge hole is less than the amount of bubbles discharged during the period when the etching solution is discharged from the second discharge hole. A substrate processing apparatus characterized by the following.

7. In the substrate processing apparatus according to claim 6, The control unit controls the bubble supply unit to stop the discharge of the plurality of bubbles during the period in which the etching solution is discharged from the first discharge hole. A substrate processing apparatus characterized by the following.

8. In the substrate processing apparatus according to claim 6, The control unit controls the bubble supply unit to switch between discharging the plurality of bubbles and stopping the discharging of the plurality of bubbles during the period in which the etching solution is discharged from the first discharge hole. A substrate processing apparatus characterized by the following.

9. A substrate processing method for processing a substrate, The process involves immersing the substrate, held in the substrate holder, in an etching solution stored in a processing tank, and An etching solution supply step of supplying the etching solution to the inside of the processing tank in which the substrate is immersed, The process includes a bubble supply step of supplying a plurality of bubbles inside the processing tank in which the substrate is immersed, The etching solution supply step involves adjusting the amount of etching solution discharged such that, for all or part of the period during which the substrate is etched, the amount of etching solution discharged toward the upper part of the substrate is greater than the amount of etching solution discharged toward the lower part of the substrate. A substrate processing method characterized by the following.

10. A substrate processing method for processing a substrate, The process involves immersing the substrate, held in the substrate holder, in an etching solution stored in a processing tank, and An etching solution supply step of supplying the etching solution to the inside of the processing tank in which the substrate is immersed, The process includes a bubble supply step of supplying a plurality of bubbles inside the processing tank in which the substrate is immersed, The etching solution supply process, during the period in which the substrate is etched, switches and adjusts between a process of discharging the etching solution toward the upper part of the substrate and a process of discharging the etching solution toward the lower part of the substrate, The bubble supply step adjusts the amount of bubbles discharged such that the amount of bubbles discharged during the period when the etching solution is discharged toward the upper part of the substrate is less than the amount of bubbles discharged during the period when the etching solution is discharged toward the lower part of the substrate. Substrate processing method.

Images