Heater assembly with processing gap control for batch processing chamber
Patent Information
- Application Number
- JP2024152917
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2020-08-31
- Filing Date
- 2024-09-05
- Publication Date
- 2026-09-01
- Estimated Expiration
- 2041-08-30
Smart Images

Figure 0007914171000001 
Figure 0007914171000002 
Figure 0007914171000003
Abstract
Description
[Technical Field]
[0001]
[0001] Embodiments of the present disclosure generally relate to a heater assembly for a batch processing chamber. In particular, embodiments of the present disclosure relate to a heater assembly including an integrated thermal insulation shield. [Background Art]
[0002]
[0002] In some chamber designs for atomic layer deposition (ALD) or chemical vapor deposition (CVD) processing, precursors and gases are simultaneously supplied to a surface of a large substrate support or a plurality of substrate supports via a plurality of gas distribution plates. The gas distribution plate is spaced apart from the substrate surface, or vice versa, forming one or more operating gaps. Such chambers can be very sensitive to the consistency and uniformity of gaps between different processing stations when the chamber is in use. A gap of about 1 mm in some multi-station deposition systems makes processes performed at separate stations very susceptible to small gap deviations.
[0003]
[0003] Many processing systems and processing tools operate with very tight space requirements. For example, a multi-substrate ALD chamber can process with a spacing of 0.8 to 1.5 mm between the substrate surface and the gas distribution system. These small spaces minimize chemical consumption by reducing the processing area, minimize ALD cycle time and purge time, and maximize throughput.
[0004]
[0004] Large-capacity batch processing chambers often suffer from variations in the alignment of the heater assembly relative to the processing station, resulting in deviations in the processing gap and processing area between the heater assembly and the processing station. Deviations in the processing gap and processing area affect process repeatability and the thermal uniformity of the heater. Conventional processing chamber leveling systems and methods use complex and expensive systems for measuring and aligning the heater. These electrically operated systems can fail due to normal wear and tear of parts, resulting in chamber downtime for repair and preventive maintenance.
[0005]
[0005] Therefore, there is a need in the art for apparatus and methods for controlling the gap between a substrate support and a gas distribution assembly(s). [Overview of the Initiative]
[0006]
[0006] One or more embodiments of the present disclosure relate to a heater assembly including a heater, a heater standoff, a shield shaft, and a shield plate. The heater has a support surface and a bottom surface defining its thickness. The heater standoff has a top end in contact with the bottom surface of the heater. The shield shaft has a top end and a bottom end, an inner surface enclosing an open internal region, and an outer surface. The heater standoff is located within the open internal region, and the top end of the heater standoff extends over the top end of the shield shaft. The shield plate has a top surface, a bottom surface, and an outer peripheral edge. The shield plate further includes an opening extending internally from the top surface to the bottom surface. The heater standoff, which extends through the opening in the shield plate and the bottom surface of the heater, is positioned at a certain distance from the top surface of the shield plate. The top surface of the shield plate has a groove having an inner surface and an outer surface that extends around the outer periphery of the shield plate. The outer surface of the shield plate is at a certain distance from the outer peripheral edge of the shield plate.
[0007]
[0007] Additional embodiments of the present disclosure relate to a substrate support having a central base, a heater assembly, and a top plate. A plurality of arms extend from there, each arm having an internal end and an external end in contact with the central base. The heater assembly is connected to the external end of each arm and includes a heater, a heater standoff, a shield shaft, and a shield plate. The heater has a support surface and a bottom surface defining its thickness. The heater standoff has a top end in contact with the bottom surface of the heater. The shield shaft has a top end and a bottom end, an internal surface enclosing an open internal region, and an external surface. The heater standoff is located within the open internal region, and the top end of the heater standoff extends over the top end of the shield shaft. The shield plate has a top surface, a bottom surface, and an outer edge. The shield plate further includes an opening extending internally from the top surface to the bottom surface. The heater standoff extending through the opening in the shield plate and the bottom surface of the heater is positioned at a certain distance from the top surface of the shield plate. The top surface of the shield plate has an inner and outer groove that extends around the outer circumference of the shield plate. The outer surface of the shield plate is at a certain distance from the outer edge of the shield plate. The top plate has a top surface and a bottom surface that define the thickness of the top plate, and has a thickness-penetrating opening through which a heater can pass, and the bottom surface of the top plate is in contact with a fluid seal in the groove within the top surface of the shield plate.
[0008]
[0008] To enable a more detailed understanding of the above-mentioned features of the Disclosure, a more detailed description of the Disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only typical embodiments of the Disclosure and should therefore not be considered to limit its scope. [Brief explanation of the drawing]
[0009] [Figure 1]
[0009] This is an isometric cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure. [Figure 2]
[0010] This is a cross-sectional view of a processing chamber according to one or more embodiments of the present disclosure. [Figure 3]
[0011] The following are bottom perspective views of a support assembly according to one or more embodiments of the present disclosure. [Figure 4]
[0012] The image shows a top perspective view of a support assembly according to one or more embodiments of the present disclosure. [Figure 5]
[0013] The image shows a top perspective view of a support assembly according to one or more embodiments of the present disclosure. [Figure 6A]
[0014] A schematic cross-sectional view of a support assembly according to one or more embodiments of the present disclosure is shown. [Figure 6B]
[0015] A schematic cross-sectional view of a support assembly according to one or more embodiments of the present disclosure is shown. [Figure 7]
[0016] The image shows a front perspective view of a heater assembly according to one or more embodiments of the present disclosure. [Figure 8]
[0017] The following are cross-sectional views of heater assemblies according to one or more embodiments of the present disclosure. [Figure 9]
[0018] Detailed cross-sectional views of a heater assembly according to one or more embodiments of the present disclosure are shown. [Figure 10]
[0019] Detailed cross-sectional views of a heater assembly according to one or more embodiments of the present disclosure are shown. [Figure 11]
[0020] This is a schematic cross-sectional view of a heater assembly according to one or more embodiments of the present disclosure. [Figure 12]
[0021] A schematic cross-sectional view of a heater assembly according to one or more embodiments of the present disclosure is shown. [Figure 13]
[0022] A schematic diagram of a processing platform according to one or more embodiments of this disclosure is shown. [Modes for carrying out the invention]
[0010]
[0023] Before describing some exemplary embodiments of this disclosure, it should be understood that this disclosure is not limited to the configuration or process step details described below. Other embodiments of this disclosure are possible and can be implemented or performed in various ways.
[0011]
[0024] As used in this specification and the attached claims, the term “substrate” refers to the surface or portion of a surface on which the process acts. Unless the context clearly indicates otherwise, it will also be understood by those skilled in the art that a reference to a substrate may also refer only to a portion of a substrate. Furthermore, a reference to deposition on a substrate may mean both a bare substrate and a substrate having one or more films or features deposited or formed thereon.
[0012]
[0025] As used herein, the "substrate" refers to any substrate or material surface formed on a substrate on which film processing is performed during a manufacturing process. For example, depending on the application, the substrate surface on which processing can be performed includes materials such as silicon, silicon oxide, strained silicon, silicon on insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, and sapphire, as well as any other materials such as metals, metal nitrides, metal alloys, and other conductive materials. Substrates include, but are not limited to, semiconductor wafers. A substrate may be exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, electron beam cure, and / or bake the substrate surface. In addition to performing film processing directly on the surface of the substrate itself, in the present disclosure, any of the disclosed film processing steps may be performed on an underlying layer formed on the substrate, as disclosed in more detail below, and the term "substrate surface" is intended to include such underlying layer as the context indicates. Therefore, for example, when a film / layer or a partial film / layer is deposited on a substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.
[0013]
[0026] As used in this specification and the appended claims, terms such as "precursor", "reactant", and "reactive gas" are used interchangeably to refer to any gas species that can react with a substrate surface or a film formed on the substrate surface.
[0014]
[0027] Some embodiments of the present disclosure advantageously provide a cost-effective solution that uses an O-ring to level a heater for processing gap control without a complex motorized system. Some embodiments provide a method of integrating a heater with a heat insulation shield, heater leveling capability, and / or processing region insulation for a single wafer in a multi-wafer processing chamber.
[0015]
[0028] Some embodiments of the present disclosure provide a heater assembly integrated into a heat shield assembly (also referred to as a heater shield assembly), forming a uniform cavity around a heater standoff. The heater shield assembly includes a shield plate and a shield shaft. The heater shield assembly further includes a fluid seal between the shield plate and the shield shaft, configured to seal against leakage and maintain vacuum integrity. The heat shield of some embodiments improves the uniformity of temperature loss around the heater.
[0016]
[0029] The present disclosure provides a substrate support for use in a single substrate or multiple substrate (also referred to as batch) processing chamber. FIGS. 1 and 2 illustrate a processing chamber 100 in accordance with one or more embodiments of the present disclosure. FIG. 1 shows a processing chamber 100 shown as a cross-sectional isometric view in accordance with one or more embodiments of the present disclosure. FIG. 2 shows a cross-section of a processing chamber 100 in accordance with one or more embodiments of the present disclosure. FIGS. 3 to 6 show a support assembly 200 in accordance with one or more embodiments of the present disclosure.
[0017]
[0030] The processing chamber 100 has a housing 102 having side walls 104 and a chamber floor 106. The housing 102 defines a processing region 109, also referred to as an internal region 109, along a chamber lid 300.
[0018]
[0031] The illustrated processing station 110 includes three main components: a chamber lid 300 (also called a lid), a pump / purge insert 330, and a gas injector 112. The processing chamber 100 further includes a plurality of processing stations 110. The processing stations 110 are located within an internal region 109 of the housing 102 and are positioned in a circular arrangement around the rotation axis 211 of the substrate support 200. Each processing station 110 includes a gas distribution plate 112 (also called a gas injector) having a front surface 114. In some embodiments, each front surface 114 of the gas injector 112 is substantially coplanar. The processing station 110 is defined as an area where processing can be performed. For example, in some embodiments, the processing station 110 is defined as an area bounded by the support surface 231 of the substrate support 200 and the front surface 114 of the gas injector 112, as described below. In the illustrated embodiment, the heater 230 functions as a substrate support surface and forms part of the substrate support 200. Each heater 230 includes a support surface 231 and a bottom surface 232 that defines the thickness of the heater 230. In some embodiments, the support surface 231 further includes equipment for at least three lift pins extending through the support surface 231.
[0019]
[0032] The processing station 110 can be configured to perform any suitable process and provide any suitable process conditions. The type of gas distribution plate 112 used depends, for example, on the type of process to be performed and the type of showerhead or gas injector. For example, a processing station 110 configured to operate as an atomic layer deposition apparatus may have a showerhead or vortex-type gas injector. On the other hand, a processing station 110 configured to operate as a plasma station may have one or more electrode and / or grounding plate configurations to generate plasma while flowing plasma gas toward the substrate. The embodiment shown in Figure 2 has a different type of processing station 110 on the left side of the drawing (processing station 110a) than the right side of the drawing (processing station 110b). Suitable processing stations 110 include, but are not limited to, thermal processing stations, microwave plasma, three-electrode CCP, ICP, parallel plate CCP, UV exposure, laser processing, pumping chamber, annealing station, and measurement station.
[0020]
[0033] Figures 3–6 show a support assembly 200 according to one or more embodiments of the present disclosure. The support assembly 200 includes a rotatable central base 210. The rotatable central base 210 may have a symmetrical or asymmetrical shape and defines an axis of rotation 211. The axis of rotation 211 extends in a first direction, as seen in Figure 6. The first direction may be called the vertical direction or the direction along the z-axis. However, it should be understood that the use of the term “vertical” in this way is not limited to the direction perpendicular to gravity.
[0021]
[0034] The support assembly 200 is connected to a central base 210 and includes at least two support arms 220 extending therefrom. Each support arm 220 has an inner end 221 and a heater mounting base 222. The inner end 221 is in contact with the central base 210 such that the support arm 220 rotates in the same way as the central base 210 rotates around the pivot axis 211. The support arm 220 can be connected to the central base 210 at the inner end 221 by fasteners (e.g., bolts) or by being integrally formed with the central base 210.
[0022]
[0035] In some embodiments, the support arm 220 extends perpendicular to the rotation axis 211, so that on the same support arm 220, one of the inner end 221 or the heater mounting base 222 is further from the rotation axis 211 than the other of the inner end 221 and the heater mounting base 222. In some embodiments, the inner end 221 of the support arm 220 is closer to the rotation axis 211 than the heater mounting base 222 of the same support arm 220.
[0023]
[0036] The number of support arms 220 in the support assembly 200 can vary. In some embodiments, there are at least two support arms 220, at least three support arms 220, at least four support arms 220, or at least five support arms 220. In some embodiments, there are three support arms 220. In some embodiments, there are four support arms 220. In some embodiments, there are five support arms 220. In some embodiments, there are six support arms 220.
[0024]
[0037] The support arms 220 can be arranged symmetrically around the central base 210. For example, in a support assembly 200 having four support arms 220, each support arm 220 is positioned at 90° intervals around the central base 210. In a support assembly 200 having three support arms 220, the support arms 220 are positioned at 120° intervals around the central base 210. In other words, in an embodiment having four support arms 220, the support arms are arranged to provide four-fold symmetry around the axis of rotation 211. In some embodiments, the support assembly 200 has n support arms 220, and the n support arms 220 are arranged to provide n-fold symmetry around the axis of rotation 211.
[0025]
[0038] The heater 230 is positioned on the heater mounting base 222 of the support arm 220. In some embodiments, each support arm 220 has a heater 230. The center of the heater 230 is positioned away from the axis of rotation 211 so that the heater 230 moves along a circular path when the central base 210 rotates.
[0026]
[0039] The heater 230 has support surfaces 231 that can support the substrate. In some embodiments, the support surfaces 231 of the heater 230 are substantially coplanar. When used in this way, “substantially coplanar” means that the plane formed by each support surface 231 is within ±5°, ±4°, ±3°, ±2°, or ±1° of the plane formed by the other support surfaces 231.
[0027]
[0040] In some embodiments, the heater 230 is positioned directly on the heater mounting base 222 of the support arm 220. In some embodiments, as shown in the drawings, the heater 230 is raised above the heater mounting base 222 of the support arm 220 by a heater standoff 234. The heater standoff 234 has a substantially cylindrical body and may be of any size and length to increase the height of the heater 230.
[0028]
[0041] In some embodiments, the channel 236 is formed in one or more of the central base 210, support arms 220, and / or heater standoffs 234. The channel 236 can be used to route electrical connections or to provide gas flow.
[0029]
[0042] The heater may be any suitable type of heater known to those skilled in the art. In some embodiments, the heater is a resistance heater having one or more heating elements within the heater body.
[0030]
[0043] In some embodiments, as shown in Figure 4, the shield plate 240 is disc-shaped and positioned around each heater 230. In the illustrated embodiment, the shield plate 240 is positioned below the heater 230 such that the top surface 241 of the shield plate 240 is below the heater's support surface 231.
[0031]
[0044] In some embodiments, the heater 230 includes additional components. For example, the heater in some embodiments includes an electrostatic chuck. The electrostatic chuck may include various wires and electrodes to hold the substrate positioned on the support surface 231 in place while the heater is moving. This allows the substrate to be chucked to the heater at the start of the process and remain in the same position on the same heater as it moves to different process areas. In some embodiments, the wires and electrodes are fed through channels 236 in the support arm 220. The electrostatic chuck is configured as a chucking surface located within the heater 230.
[0032]
[0045] In some embodiments, as shown in Figure 5, the top plate 245 is a single component that encloses the entire heater 230, having at least one opening 242 that allows access to the support surface 231 of the heater 230. The top plate 245 has a top surface 246 and a bottom surface 249 that define the thickness of the top plate 245. The opening 242 can allow the heater 230 to pass through the top plate 245. In some embodiments, the top plate 245 is fixed so that the top plate 245 moves and rotates vertically with the heater 230.
[0033]
[0046] Referring to Figure 6A, in some embodiments, the top plate 245 has a top surface 246 that forms a main plane 248 substantially parallel to the main plane 247 formed by the support surface 231 of the heater 230. In some embodiments, the top plate 245 has a top surface 246 that forms a main plane 248 located at a distance D from the main plane 247 of the support surface 231. In some embodiments, the distance D is substantially equal to the thickness of the substrate 390 being processed such that the support surface 231 is coplanar with the top surface 246 of the top plate 245, as shown in Figure 6B. When used in this way, the term “substantially coplanar” means that the main planes formed by the surface of the substrate 390 are within ±1 mm, ±0.5 mm, ±0.4 mm, ±0.3 mm, ±0.2 mm, or ±0.1 mm of the same plane.
[0034]
[0047] Figure 7 shows a partial isometric view of a support assembly 200 having a heater assembly 205 according to one or more embodiments of the present disclosure. Figure 8 shows a partial cross-sectional view of the support assembly 200 having the heater assembly 205 shown in Figure 7, along line 8-8'. Shading in the figures is used to help distinguish different components and does not imply any specific component material. In some embodiments, the heater assembly 205 includes a heater 230, a heater standoff 234, and a shield comprising a shield shaft 250 and a shield plate 240.
[0035]
[0048] The shield shaft 240 has an outer surface 255 and an inner surface 257 that surround each of the heater standoffs 234. The shield shaft 250 has a top end 252 and a bottom end 258 that define the length of the shield shaft 250. In some embodiments, the shield shaft 250 has a shape that is concentric with the shape of the standoffs 234. In some embodiments, the shield shaft 250 has a substantially cylindrical body. When used in this way, the term “substantially cylindrical” means that the shape gives an overall cylindrical appearance and includes an elongated ellipse.
[0036]
[0049] In some embodiments, the bottom end 258 of the shield shaft 250 includes a bottom flange 267. In some embodiments, the bottom flange 267 has a top surface 260 and a bottom surface 262 that define its thickness. In some embodiments, the bottom flange 267 extends outward from the outer surface 255. In some embodiments, the bottom flange 267 provides space for fasteners or other components.
[0037]
[0050] In some embodiments, at least three openings 259 extend through the thickness of the bottom end 258. In some embodiments, the openings 259 extend through the thickness of the flange 267, which is part of the bottom end 258. In some embodiments, at least three openings 259 are spaced apart around the central axis 253 of the shield shaft 250. In some embodiments, at least three openings 259 are equally spaced around the central axis 253. In some embodiments, there are three equally spaced openings 259 around the central axis 253 such that, measured from the central axis 253, the openings 259 are positioned at 120-degree intervals. In some embodiments, at least four openings penetrate the thickness of the bottom end 258, and the at least four openings form a square planar configuration around the central axis of the shield shaft 250, with each of the at least four openings positioned at 90 degrees to each other.
[0038]
[0051] In some embodiments, the leveling fastener 261 is positioned inside each of at least three openings 259. In some embodiments, the leveling fastener 261 is used to level the shield shaft 250 and secure it to the top surface 223 of the outer end 224 of the support arm 220. The leveling fastener 261 is configured to adjust the shield shaft 250 perpendicular to the top surface 223 of the heater mounting base 222. In other words, in some embodiments, the leveling fastener 261 is configured to allow adjustment of the shield shaft 250 so that the central axis 253 of the shield shaft is substantially perpendicular (±2°) to the top surface 223 of the heater mounting base 222.
[0039] In some embodiments in which calibration of the shield shaft 250 relative to the outer end 224 of the support arm 220 is performed, one or more shims (not shown) of variable thickness are positioned around a leveling fastener 261, as will be described in more detail below. In some embodiments, one or more shims are positioned between the outer end 224 of the support arm 220 and the bottom surface 262 of the shield shaft 250.
[0040]
[0053] The heater standoff 234 includes a top end 235 and a bottom end 237. The top end 235 of the heater standoff 234 is in contact with the bottom surface 232 of the heater 230. The bottom end 237 of the heater standoff 234 is in contact with the standoff mounting base 310. In some embodiments, the standoff mounting base 310 is configured to secure the heater standoff 234 to the outer end 224 of the support arm 220. In some embodiments, the heater standoff 234 has an open internal channel 239 that allows electrical connections 244 to one or more of the thermal elements 219 or electrodes 217 of the electrostatic chuck within the heater 230. Those skilled in the art will be familiar with the construction of heaters and electrostatic chucks and will understand that the arrangement of thermal and electrical components within the heater 230 is modifiable.
[0041]
[0054] In the illustrated embodiment, the top end 235 of the heater standoff 234 is above the top end 252 of the shield shaft 250. In some embodiments, the top end 252 of the shield shaft 250 extends above the top end 235 of the heater standoff 234. In some embodiments, the top end 252 of the shield shaft 250 extends to the top end 235 of the heater standoff 234.
[0042]
[0055] As shown in Figures 8 and 9, the shield plate 240 has a top surface 270 and a bottom surface 272 that define its thickness. The shield plate 240 further includes an opening 271 extending from the top surface 270 to the bottom surface 272. In some embodiments, as shown in the figures, the bottom surface 232 of the heater 230 is positioned at a certain distance from the top surface 270 of the shield plate 240. In some embodiments, the distance between the bottom surface 232 of the heater 230 and the top surface 270 of the shield plate 240 is in the range of 0.01 mm to 50 mm, or 0.25 mm to 40 mm, or 0.5 mm to 30 mm, or 1 mm to 20 mm.
[0043]
[0056] The shield plate 240 has an inner portion 274, an outer portion 275, and an outer peripheral edge 281. In some embodiments, the outer portion 275 has a greater thickness than the inner portion 274. In some embodiments, the bottom surface 272 of the shield plate 240 is in contact with the top end 252 of the shield shaft 250 and secured by fasteners 256 extending through at least three openings 254, the at least three openings 254 extending through the top end 252. In some embodiments, the bottom surface 272 is welded to the top end 252 of the shield shaft 250. In some embodiments, the bottom surface 272 of the shield plate 240 has a greater thickness where the top end 252 is in contact with the bottom surface 272 of the shield plate 240. The greater thickness is for accommodating fastener holes configured to receive the fasteners 256.
[0044]
[0057] Figure 9 shows a portion of the outer edge of a heater 230 having a top plate 245 and a shield plate 240. In the illustrated embodiment, the shield plate 240 is positioned below one of at least one opening 242 in the top plate 245. The top surface 270 of the shield plate 240 further includes a groove 278 extending around the outer periphery 276 of the shield plate 240, having an inner surface 279 and an outer surface 280, the outer surface 280 being positioned at a certain distance from the outer periphery edge 281 of the shield plate 240.
[0045]
[0058] In each of at least one opening 242, the bottom surface 249 of the top plate 245 is in contact with the outer periphery 276 of the top surface 270 of the shield plate 240. A first fluid seal 392 (also called the “top fluid seal”) is positioned in a ring-shaped groove 278 of the outer edge 281 to maintain a low-pressure state within the processing station 110. The first fluid seal 392 is configured to compress unevenly around the shield plate 240 so that uneven pressure is applied between the shield plate 240 and the top plate 245, while the first fluid seal 392 still maintains the atmospheric environmental conditions within the processing station.
[0046]
[0059] In some embodiments, a ring-shaped shim 350 having thickness is positioned between the top surface 241 of the shield plate 240 (below the support surface 231 of the heater 230) and the bottom surface 249 of the top plate 245. The ring-shaped shim 350 is configured to compress the first fluid seal 392, which is at least partially seated in the groove 278 of the shield plate 240. In some embodiments, the thickness of the ring-shaped shim 350 can be configured to adapt to a variable distance between the top surface 241 of the shield plate 240 and the bottom surface 249 of the top plate 245. In some embodiments, the ring-shaped shim 350 has a variable thickness around the ring. In some embodiments, the ring-shaped shim 350 comprises a plurality of individual pieces assembled into a ring shape.
[0047]
[0060] In some embodiments, a plenum 283 is formed between a ring-shaped shim 350 and a top plate 245. The plenum 283 can be any suitable shape and / or size, as will be understood by those skilled in the art. In some embodiments, the plenum 283 is connected to a vacuum source (e.g., a vacuum pump, foreline) to prevent the processing gas from leaking out of the processing area in the processing station.
[0048]
[0061] In some embodiments, both the ring-shaped shim 350 and the first fluid seal 392 are configured to seal off gas leaks into or from the processing station and maintain the integrity of the vacuum within the processing station. In some embodiments, the first fluid seal 392 is configured to seal off vertical processing gap variations of up to 1.5 mm, 1.25 mm, 1 mm, 0.75 mm, or 0.5 mm within the processing station 110. The vertical processing gap is defined by the vertical distance between the support surface 231 and the front surface 114 of each gas injector 112. In some embodiments, the shim 350 is provided to have a greater thickness when the processing gap is too small. In some embodiments, the shim 350 is provided to have a thinner thickness when the processing gap is too large. Similarly, the first fluid seal 392 can be oversized to compensate for processing gaps that are too small. In some embodiments, the first fluid seal is configured to contain leaks and maintain vacuum integrity up to vertical gap variations of up to 1 mm within the chamber.
[0049]
[0062] The first fluid seal 392 can be any suitable compressible component known to those skilled in the art that is suitable for the processing gas and processing conditions. In some embodiments, the first fluid seal 392 is configured to have a maximum compression of 12% to 13%. In some embodiments, the first fluid seal 392 is configured to have a maximum compression in the range of 1% to 15% of the initial thickness of the first fluid seal 392, or in the range of 5% to 14%, or in the range of 10% to 13%.
[0050]
[0063] The first fluid seal 392 is configured to compress non-uniformly to account for planar variations of the support surface 231. Planar variations may occur due to motor runout or variations in the mechanical tolerances of one or more of the heater standoff 234, shield shaft 250, standoff mounting base 310, support arm 220, shield plate 240, and top plate 245. In some embodiments, the first fluid seal is configured to accommodate vertical gap variations of up to 0.5 mm between the shield plate 240 and the top plate 245.
[0051] Referring to Figure 10, in some embodiments, the standoff mounting base 310 is connected to the bottom end 237 of the heater standoff 234 and the bottom end 258 of the shield shaft 250. The standoff mounting base 310 is configured to secure the heater standoff 234 and the shield shaft 250 to the outer end 224 of the support arm 220. The standoff mounting base 310 has a top end 312 and a bottom end 314, the top end 312 having a larger diameter than the bottom end 314. The top surface 316 of the top end 312 is in contact with the bottom of the heater standoff 234.
[0052]
[0065] The bottom end 314 of the standoff mounting base 310 is configured to interlock with each other within the opening 225 of the top surface 223 of the support arm 220. In some embodiments, the bottom end 314 extends to a depth within the opening 225 of the support arm 220. In some embodiments, the bottom end 314 is press-fitted or interference fit into the opening 225.
[0053]
[0066] In some embodiments, the bottom end 258 of the shield shaft 250 has an opening 251 that allows the lower part 238 of the standoff mounting base 310 to pass through.
[0054]
[0067] In some embodiments, the top end 312 of the standoff mounting base 310 further includes a plurality of stepped surfaces 315. In some embodiments, each of the plurality of stepped surfaces 315 has a diameter that gradually decreases from the top surface 316 of the standoff mounting base 310 to the bottom surface 318 of the standoff mounting base 310. Each of the plurality of stepped surfaces 315 has a bottom surface 317 that contacts the corresponding step of the inner flange 264 of the shield shaft 250. In some embodiments, one or more of the bottom surfaces 318 of each of the plurality of stepped surfaces 315 further include a channel 313 for receiving a plurality of fluid seals 311. The plurality of fluid seals 311 are configured to maintain a low-pressure atmosphere environment within the shield shaft 250 when the plurality of fluid seals 311 are compressed between the bottom surface 317 of each of the plurality of stepped surfaces 315 and the corresponding step of the inner flange 264 of the shield shaft 250. In some embodiments, the top surface 316 is partially recessed into the top end 312 of the standoff mounting base 310.
[0055]
[0068] In embodiments having multiple processing stations 110, the support arm 220 includes an outer end 221 as described above. In embodiments having a single processing station, the heater mounting base 222 includes a top surface 223 adjacent to the bottom surface 262 of the shield shaft 250. The top surface 223 of the heater mounting base 222 includes an opening 225 connected to the hollow internal region of the heater mounting base 222. The opening 225 partially extends through the top surface 223. The opening 225 is concentrically positioned on the central axis of the heater mounting base 222. The opening 225 is configured to allow the passage of electrical cables, fluid channels, and gas channels through the hollow internal region of the heater mounting base 222, through the standoff mounting base 310, and into the open internal channels of the heater standoff 234. In some embodiments, the opening 225 is configured to receive the bottom 314 of the standoff mounting base 310.
[0056]
[0069] The top surface 223 further includes a ring-shaped groove 227 for receiving a second fluid seal 229 (also called the “bottom fluid seal”) positioned around the opening 225. The second fluid seal 229 is in contact with the bottom surface 268 of the shield shaft 250. The second fluid seal 229 is configured to allow movement of the shield shaft 250 relative to the top surface 223 of the heater mounting base 222.
[0057]
[0070] The second fluid seal 229 is configured to allow at least one shim (not shown) to be positioned between the bottom surface 268 of the shield shaft 250 and the top surface 223 of the heater mounting base 222. In some embodiments, at least one shim is a ring-shaped shim positioned around the opening 225. In some embodiments, at least one shim is positioned between fasteners that secure the bottom end 258 of the shield shaft 250 to the top surface 223 of the support arm 220.
[0058]
[0071] In some embodiments, the first fluid seal 392 and the second fluid seal 229 are O-rings. In some embodiments, the first fluid seal 392 and the second fluid seal 229 are V-rings. In some embodiments, the first fluid seal 392 and the second fluid seal 229 are L-rings.
[0059]
[0072] The shield plate 240 and the shield shaft 250 form a uniform heater shield assembly. The heater shield assembly forms a uniform gap sealed against leakage by the first fluid seal 392 and the second fluid seal 299, maintaining the integrity of the vacuum within the uniform gap. The heater shield assembly, also called a thermal shield assembly, enhances the uniformity of temperature loss around the heater 230.
[0060]
[0073] As shown in Figures 11 and 12, each of the support surfaces 231 of the heater 230 is substantially coplanar with each of the other support surfaces 231 of the heater 230. In some embodiments, the support surface 231 is at an angle Θ with respect to the heater standoff 234, and after calibration, the angle Θ is 90 degrees, thereby providing a horizontal surface to the support surface 231.
[0061]
[0074] As shown in Figure 12, motor axial runout can cause the support surface 231 and heater standoff 234 to be improperly aligned, and the angle Θ is no longer substantially 90 degrees. Continuous cycling and torsional force scanning also contribute to improper alignment, thus inducing wobbling, fluctuations in the internal volume within the processing chamber, or fluctuations in the separation gap distance.
[0062]
[0075] In some embodiments, multiple displacement sensors are used to mechanically correct improper alignment, thereby ensuring that the support surface 231 is properly aligned with the top plate 245. In some embodiments, mechanical correction includes, but is not limited to, shimming the connection point or flange between the heater standoff 234 and the heater 230, shimming the connection point between the heater standoff 234 and the support arm 220, and adjusting the fasteners at the top end 252 and bottom end 258 of the shield shaft 250. Calibration may further include placing shims between the fasteners 256 at the top end 252 of the shield shaft 250 and between the leveling fasteners 261 at the bottom end 258 of the shield shaft 250. Mechanical calibration may also include placing or adjusting the thickness of a ring-shaped shim 350 to accommodate vertical processing gap deviations.
[0063]
[0076] In some embodiments, as will be described in more detail below, the runout and wobble caused by the improper alignment of the heater standoff 234 are calibrated, as shown in Figure 12. After the runout and wobble of the heater standoff 234 are corrected and properly aligned, the angle Θ is substantially aligned to 90 degrees.
[0064]
[0077] In some embodiments, the displacement sensors are preferably laser displacement sensors, in which a laser beam is directed toward the support surface 231. The displacement sensors are configured to measure the distance from the sensor to a point on the support surface 231. In some embodiments, the displacement sensors are also configured to measure the distance between the sensor and a point on the top surface 246 of the top plate 245.
[0065]
[0078] In the embodiments described, the displacement sensor is part of at least one set of three sensors. Each of the three sensors in the set is configured to measure the distance from the sensor to a point on the surface, thereby allowing the three sensors to measure the distance to three points on the surface. In some embodiments, the three sensors in the set are positioned equidistant from each other in an equilateral triangle configuration, and the triangle configuration lies in the xy-plane with its central axis relative to a surface that is calibrated for coplanarity.
[0066]
[0079] In the embodiments described, the displacement sensor is configured to measure the parallelism of a support surface 231 to a corresponding set of three sensors. The parallelism of the surface to a set of three sensors is calculated by the distance between each of the three sensors and a point on the surface, where the distance lies in the z-plane relative to the xy-plane of the sensor's triangular configuration. In some embodiments, the displacement sensor is configured to measure the parallelism of opposing support surfaces 231 to two corresponding sets of three sensors. In some embodiments, the displacement sensor is configured to measure the parallelism of multiple support surfaces 231 to a displacement sensor. In some embodiments, the displacement sensor is configured to measure the parallelism of the top surface 246 of a top plate 245 to a corresponding set of three sensors.
[0067]
[0080] Figure 14 shows a processing platform 400 according to one or more embodiments of the present disclosure. The embodiments shown in Figure 4 are merely representative of one possible configuration and should not be construed as limiting the scope of the disclosure. For example, in some embodiments, the processing platform 400 has one or more of the processing chamber 100, buffer station 420, and / or robot 430 configurations, in a different number than in the illustrated embodiments.
[0068]
[0081] An exemplary processing platform 400 includes a central transfer station 410 having multiple sides 411, 412, 413, and 414. The illustrated transfer station 410 has a first side 411, a second side 412, a third side 413, and a fourth side 414. Although four sides are shown, those skilled in the art will understand that, depending on the overall configuration of the processing platform 400, any appropriate number of sides may be present for the transfer station 410. In some embodiments, the transfer station 410 has three, four, five, six, seven, or eight sides.
[0069]
[0082] The transfer station 410 has a robot 430 positioned thereon. The robot 430 may be any suitable robot capable of moving the substrate during processing. In some embodiments, the robot 430 has a first arm 431 and a second arm 432. The first arm 431 and the second arm 432 can move independently of the other arm. The first arm 431 and the second arm 432 can move in the xy plane and / or along the - axis. In some embodiments, the robot 430 includes a third arm (not shown) or a fourth arm (not shown). Each arm can move independently of the other arms.
[0070]
[0083] The illustrated embodiment includes six processing chambers 100, two of which are connected to the second side 412, the third side 413, and the fourth side 414, respectively, of the central transfer station 410. Each of the processing chambers 100 can be configured to perform a different process.
[0071]
[0084] The processing platform 400 may also include one or more buffer stations 420 connected to the first side 411 of the central transfer station 410. The buffer stations 420 may perform the same or different functions. For example, a buffer station may hold a cassette of substrates to be processed and returned to the original cassette, or one of the buffer stations may hold unprocessed substrates to be moved to another buffer station after processing. In some embodiments, one or more buffer stations may be configured to pre-treat, preheat, or wash the substrates before and / or after processing.
[0072]
[0085] The processing platform 400 may also include one or more slit valves 418 between the central transfer station 410 and the processing chamber 100. The slit valves 418 can be opened and closed to isolate the internal area within the processing chamber 100 from the environment within the central transfer station 410. For example, if the processing chamber generates plasma during processing, it may be useful to close the slit valves of that process chamber to prevent stray plasma from damaging robots in the transfer station.
[0073]
[0086] The processing platform 400 can be connected to a factory interface 450 to allow boards or cassettes of boards to be loaded onto the processing platform 400. A robot 455 within the factory interface 450 can be used to load and unload the boards or cassettes into a buffer station. The boards or cassettes can be moved within the processing platform 400 by a robot 430 at a central transfer station 410. In some embodiments, the factory interface 450 is a transfer station for another cluster tool (i.e., another multi-chamber processing platform).
[0074]
[0087] A controller 495 is provided and can be coupled to various components of the processing platform 400 to control their operation. The controller 495 may be a single controller that controls the entire processing platform 400, or multiple controllers that control individual parts of the processing platform 400. For example, in some embodiments of the processing platform 400, separate controllers are provided for one or more of the individual processing chambers 100, the central transfer station 410, the factory interface 450, and / or the robots 430.
[0075]
[0088] In some embodiments, the processing chamber 100 further includes a controller 495 connected to a plurality of substantially coplanar support surfaces 231 configured to control one or more of a first or second temperature. In one or more embodiments, the controller 495 controls the moving speed of the substrate support 200 (Figure 2).
[0076] In some embodiments, the controller 495 includes a central processing unit (CPU) 496, memory 497, and support circuitry 498. The controller 495 can control the processing platform 400 directly or via a computer (or controller) associated with a specific process chamber and / or support system component.
[0077]
[0090] The controller 495 may be one of any form of general-purpose computer processors that can be used in an industrial environment to control various chambers and subprocessors. The memory 497 or computer-readable medium of the controller 495 may be one or more readily available memories such as random access memory (RAM), read-only memory (ROM), floppy disks, hard disks, optical storage media (e.g., compact discs or digital video discs), flash drives, or other forms of local or remote digital storage. The memory 497 may hold an instruction set that can be operated by the processor (CPU 496) to control the parameters and components of the processing platform 400.
[0078]
[0091] Support circuits 498 are coupled to the CPU 496 to support the processor in a conventional manner. These circuits include caches, power supplies, clock circuits, input / output circuits, and subsystems. One or more processes, when executed or invoked by the processor, can be stored in memory 498 as software routines that cause the processor to control the operation of the processing platform 400 or individual processing chambers in the manner described herein. The software routines may also be stored and / or executed by a second CPU (not shown) located separately from the hardware controlled by the CPU 496.
[0079]
[0092] Some or all of the processes and methods of this disclosure can also be performed in hardware. Therefore, the processes may be implemented in software and executed using a computer system, in hardware such as application-specific integrated circuits or other types of hardware implementations, or as a combination of software and hardware. When executed by a processor, the software routines transform a general-purpose computer into a dedicated computer (controller) that controls the chamber operation so that the processes can be executed.
[0080]
[0093] In some embodiments, the controller 495 has one or more configurations for executing individual processes or subprocesses to perform the method. The controller 495 can be connected and configured to operate intermediate components to perform the function of the method. For example, the controller 495 may be connected to and configured to control one or more of the following components: gas valves, actuators, motors, slit valves, vacuum controls, or other components.
[0081]
[0094] A power supply 530 is connected to electrodes 521 and 522 to generate a voltage difference between them. The power supply 530 is connected to electrodes 521 and 522 via transmission lines 531 and 532. The transmission lines 531 and 532 are electrically isolated by any suitable insulator to prevent short circuits or arc discharges.
[0082]
[0095] In some embodiments, the power supply 530 provides a first voltage (also called potential) to electrode 521 and a second voltage different from the first voltage to electrode 522. In some embodiments, the power supply 530 is configured to provide high-voltage direct current (DC) and low-voltage alternating current (AC) components to electrodes 521 and 522.
[0083]
[0096] In one or more embodiments of the present disclosure, the power supply 530 includes or is connected to a capacitance sensor 535. In some embodiments, the capacitance sensor 535 is a separate sensor in the body 502 of the substrate support 500, as shown in Figure 2. In some embodiments, the capacitance sensor is part of the electronics of the power supply 530.
[0084]
[0097] In some embodiments, the controller 590 is connected to at least one heating element 540 and configured to control the power supplied to at least one heating element 540. In some embodiments, the controller 590 is connected to a temperature sensor (e.g., a pyrometer, thermocouple, etc.) to measure the temperature of the substrate or substrate support 500 and to change the power supplied to the heating element 540 to maintain a predetermined temperature.
[0085]
[0098] In some embodiments, the controller 590 is connected to a displacement sensor and configured to determine at least the deviation of the vertical processing gap. The controller 590 is further configured to determine the coplanarity of the support surface 231 and to provide a shimming value for mechanical calibration. The controller 590 is further configured to measure one or more of the processing gap between the substrate and the shower head, the lift pin operating surface, the flatness of the top surface, the runout of the heater standoff 234, the vacuum deflection of the heater standoff 234, and the parallelism of the heater with respect to the shower head.
[0086]
[0099] A method for calibrating a processing chamber 100 under vacuum according to one or more embodiments of the present disclosure is described. The method includes establishing a processing gap by aligning the top surfaces of one or more support surfaces 231 located within an internal region 109 with the chamber lid 300, wherein the one or more support surfaces 231 are connected to a column 190 extending through an opening 120 in the chamber floor 106 and an opening in a support plate 320 attached to the bottom surface 118 of the chamber floor 106, and creating a vacuum environment within the internal region 109 and deflecting the chamber floor 106 toward the internal region 109 while maintaining the processing gap. The processing gap is between 1 mm and 2 mm.
[0087]
[0100] Referring again to Figures 1, 2, 3A, and 3B, one or more embodiments of the present disclosure relate to a processing chamber 100. The processing chamber includes a support plate 320 for mitigating the effects of deflection of the chamber floor 106 due to low-pressure atmospheric environmental conditions within the internal region 109. A support column 190 extends through the chamber floor 106 and the support plate 320, while a bellows assembly 340 separates the atmospheric environment outside the internal region 109 from the vacuum or low-pressure atmospheric environmental conditions within the internal region 109.
[0088]
[0101] Throughout this specification, any reference to “one embodiment,” “a particular embodiment,” “one or more embodiments,” or “embodiment” means that any particular feature, structure, material, or property described in relation to an embodiment is included in at least one embodiment of this disclosure. Therefore, any occurrence of phrases such as “in one or more embodiments,” “a particular embodiment,” “in one embodiment,” or “in an embodiment” in various places throughout this specification does not necessarily refer to the same embodiment of this disclosure. Furthermore, any particular feature, structure, material, or property may be combined in any suitable manner in one or more embodiments.
[0089]
[0102] While the disclosures herein have been described with reference to specific embodiments, those skilled in the art will understand that the embodiments described are merely illustrative of the principles and applications of the disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the methods and apparatus of the disclosure without departing from the spirit and scope of the disclosure. Accordingly, the disclosure may include modifications and variations that fall within the scope of the appended claims and their equivalents.
Claims
1. A heat shield integrated into the heater assembly, A shield shaft having a top end, a bottom end, an inner surface and an outer surface surrounding an open internal region, wherein the open internal region is configured to surround a heater standoff, and the shield shaft, A shield plate having a top surface, a bottom surface and an outer edge, wherein the inner portion has an opening extending from the top surface to the bottom surface, the heater standoff extends through the opening in the shield plate, the bottom surface of a heater mounted on the heater standoff is at a certain distance from the top surface of the shield plate, the top surface of the shield plate has a groove having an inner surface and an outer surface extending around the outer periphery of the shield plate, the outer surface of the groove is at a certain distance from the outer edge of the shield plate, and the shield plate and To maintain a low-pressure state within the processing station, a first fluid seal is provided in the groove of the shield plate, A second fluid seal is positioned between the bottom surface of the shield shaft and the top surface of the support arm, A standoff mounting base connected to the bottom end of the heater standoff, Includes, A heat shield in which the standoff mounting base is connected to the bottom end of the shield shaft, and the bottom end of the shield shaft has an opening through which the lower part of the standoff mounting base passes.
2. The thermal shield according to claim 1, wherein the shield shaft includes a top flange extending outward from the outer surface of the shield shaft, and the shield shaft is connected to the shield plate by a fastener extending through the top flange.
3. The heat shield according to claim 1, further comprising a heater mounting base having a top surface, wherein the bottom surface of the shield shaft is positioned adjacent to the top surface of the heater mounting base.
4. The heat shield according to claim 3, wherein the top surface of the heater mounting base includes an opening connected to a hollow internal region of the heater mounting base.
5. The heat shield according to claim 4, wherein the lower part of the standoff mounting base extends at least partially into the opening in the top surface of the heater mounting base so that electrical connections can pass through the hollow internal region of the heater mounting base, through the standoff mounting base, and into the open internal channel of the heater standoff.
6. The heat shield according to claim 3, wherein a fluid seal is disposed in a circular groove on the top surface of the heater mounting base, and the fluid seal allows the shield shaft to move perpendicular to the top surface of the heater mounting base.
7. The heat shield according to claim 6, wherein the bottom surface of the shield shaft includes a bottom flange extending outward from the outer surface of the shield shaft.
8. The heat shield according to claim 7, further comprising a plurality of leveling fasteners extending into the heater mounting base through the bottom flange of the shield shaft, wherein the plurality of leveling fasteners are configured to adjust the shield shaft to be perpendicular to the top surface of the heater mounting base.
9. The heat shield according to claim 1, further comprising a top plate, the top plate having a top surface and a bottom surface defining the thickness of the top plate, the top plate having an opening that penetrates the thickness and allows the heater to pass through, and the bottom surface of the top plate being in contact with the first fluid seal in the groove in the top surface of the shield plate.
10. The heat shield according to claim 9, further comprising a ring-shaped shim, the ring-shaped shim having a top and bottom surface defining the thickness of the ring-shaped shim, and the ring-shaped shim being positioned around the heater between the top surface of the shield plate and the bottom surface of the top plate.
11. The thermal shield according to claim 10, wherein the first fluid seal is configured to seal off from the atmosphere and maintain vacuum integrity with a maximum variation of 1 mm in the vertical gap between the top surface of the shield plate and the bottom surface of the top plate.
12. The heat shield according to claim 11, wherein the first fluid seal is configured to be compressed non-uniformly.
13. The thermal shield according to claim 11, wherein the first fluid seal is configured to accommodate variations in the vertical gap between the top surface of the shield plate and the bottom surface of the top plate, up to a maximum of 0.5 mm.
14. The heat shield according to claim 11, wherein the first fluid seal is configured to have a maximum compression of 12% to 13%.
15. A substrate support, A central base having a plurality of arms extending from the central base, each arm having an inner end and an outer end that contact the central base, A heater assembly connected to the outer end of each arm, A heater including a support surface and a bottom surface that defines the thickness, A heater standoff having a top end and a bottom end, the top end being in contact with the bottom surface of the heater, A shield shaft having a top end and a bottom end, an inner surface and an outer surface surrounding an open internal region, wherein the heater standoff is located within the open internal region, and the top end of the heater standoff extends above the top end of the shield shaft, A shield plate having a top surface, a bottom surface and an outer peripheral edge, wherein the shield plate has an opening in its inner portion extending from the top surface to the bottom surface, the heater standoff extends through the opening in the shield plate, the bottom surface of the heater is at a certain distance from the top surface of the shield plate, the top surface of the shield plate has a groove having an inner and outer surface extending around the outer peripheral portion of the shield plate, the outer surface of the groove is at a certain distance from the outer peripheral edge of the shield plate, and, A standoff mounting base connected to the bottom end of the heater standoff, wherein the standoff mounting base is connected to the bottom end of the shield shaft, and the bottom end of the shield shaft has an opening through which the lower part of the standoff mounting base passes, The heater assembly having, A top plate, wherein the top plate has a top surface and a bottom surface that define the thickness of the top plate, and the top plate has an opening that penetrates the thickness of the top plate and allows the heater to pass through, A substrate support containing a substrate.
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