Conveying device, conveying method, and method for manufacturing semiconductor device

Abstract

A conveyance device (600) according to the present embodiment conveys a substrate (100) in order to irradiate the substrate (100) with linear laser light (15) and comprises: a main flotation unit (10) that has an irradiation area arranged directly below the irradiation position of the laser light, additionally includes an upper surface, and causes the substrate to float at the upper surface; a holding mechanism (11) that is arranged on the outside of the main flotation unit (10) and holds the substrate (100) above the main flotation unit; a first movement mechanism that moves the holding mechanism (11) in a first direction in order to change the irradiation position of the laser light with respect to the substrate (100); and a second movement mechanism that causes the holding mechanism and the first movement mechanism to move in a second direction inclined from the first direction.

Description

[Technical Field]

[0001] The present invention relates to a conveying apparatus, a conveying method, and a method for manufacturing a semiconductor device. [Background Art]

[0002] Patent Document 1 discloses a laser annealing apparatus for forming a polycrystalline silicon thin film. In Patent Document 1, a projection lens condenses laser light onto a substrate such that the laser light forms a linear irradiation region. Thereby, the amorphous silicon film is crystallized into a polysilicon film.

[0003] In Patent Document 1, a conveying unit conveys the substrate while a levitation unit levitates the substrate. Furthermore, in the levitation unit, the carry-in position and the carry-out position of the substrate are common. The conveying unit conveys the substrate along each side of the levitation unit. Then, as the substrate circulates twice over the levitation unit, substantially the entire surface of the substrate is irradiated with the laser light. [Prior Art Literature] [Patent Literature]

[0004] [Patent Document 1] Japanese Unexamined Patent Application Publication No. 2018-64048 [Summary of the Invention]

[0005] In a conveying apparatus for such a laser irradiation apparatus, it is desired that a substrate be appropriately conveyed so that the laser irradiation process can be performed at high speed and stably.

[0006] Other problems and novel features will become apparent from the description of the present specification and the accompanying drawings.

[0007] According to one embodiment, the transport device is a transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, and comprises: a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface; a holding mechanism positioned outside the main levitation unit and holding the substrate on the main levitation unit; a first moving mechanism that moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam on the substrate; and a second moving mechanism that moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam on the substrate.

[0008] According to one embodiment, the transport device is a transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, and includes a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface, a levitation unit positioned outside the main levitation unit and having an opening provided along a first direction and ejecting gas onto the lower surface of the substrate, and a holding mechanism positioned in the opening and holding the substrate. The system comprises the holding mechanism and a first moving mechanism for moving the levitation unit along the first direction.

[0009] According to one embodiment, the transport method is a transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, wherein the transport device comprises a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface, and a holding mechanism positioned outside the main levitation unit and holding the substrate on the main levitation unit, wherein the method comprises (A1) a step of moving the holding mechanism in a first direction by a first moving mechanism in order to change the irradiation position of the laser beam on the substrate, and (A2) a step of moving the holding mechanism and the first moving mechanism in a second direction tilted from the first direction by a second moving mechanism in order to change the irradiation position of the laser beam on the substrate.

[0010] According to one embodiment, the transport method is a transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, comprising: a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface; a movable levitation unit positioned outside the main levitation unit and having an opening provided along a first direction and ejecting gas to the lower surface of the substrate; and a holding mechanism positioned in the opening that holds the substrate, wherein (B1) a first moving mechanism comprises the step of moving the holding mechanism and the movable levitation unit along the first direction.

[0011] According to one embodiment, a method for manufacturing a semiconductor device comprises (sa1) the step of forming an amorphous film on a substrate, (sa2) the step of transferring the substrate on which the amorphous film is formed to a transport device, and (sa3) the step of annealing the amorphous film to form a crystallized film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, wherein the transport device comprises a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface, a holding mechanism positioned outside the main levitation unit and holding the substrate on the main levitation unit, a first moving mechanism that moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam on the substrate, and a second moving mechanism that moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam on the substrate.

[0012] According to one embodiment, a method for manufacturing a semiconductor device comprises (sb1) the step of forming an amorphous film on a substrate, (sb2) the step of transferring the substrate on which the amorphous film is formed to a transport device, and (sb3) the step of annealing the amorphous film to form a crystallized film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, wherein the transport device comprises a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface, a levitation unit positioned outside the main levitation unit and having an opening provided along a first direction and ejecting gas to the lower surface of the substrate, a holding mechanism positioned in the opening and holding the substrate, and a step of moving the holding mechanism and the levitation unit along the first direction by a first moving mechanism.

[0013] According to the above embodiment, substrate transport suitable for the laser irradiation process can be realized. [Brief explanation of the drawing]

[0014] [Figure 1] This is a schematic top view showing the configuration of the transport device used in a laser irradiation device. [Figure 2] This is a schematic side cross-sectional view of a laser irradiation device. [Figure 3] This is a schematic side cross-sectional view of a laser irradiation device. [Figure 4] This is a top view illustrating the configuration before the laser beam is shone onto the substrate. [Figure 5] This is a top view illustrating the configuration during laser light irradiation. [Figure 6] This is a top view illustrating the transport direction and the inclination of the substrate. [Figure 7] This is a top view illustrating the conveying process in a conveying device. [Figure 8] This is a top view illustrating the conveying process in a conveying device. [Figure 9] This is a top view illustrating the conveying process in a conveying device. [Figure 10] It is a top view for explaining a conveying step in a conveying device. [Figure 11] It is a top view for explaining a conveying step in a conveying device. [Figure 12] It is a top view for explaining a conveying step in a conveying device. [Figure 13] It is a top view for explaining a conveying step in a conveying device. [Figure 14] It is a top view for explaining a conveying step in a conveying device. [Figure 15] It is a top view for explaining a conveying step in a conveying device. [Figure 16] It is a cross-sectional view schematically showing a configuration of an organic EL display. [Figure 17] It is a process cross-sectional view showing a method for manufacturing a semiconductor device according to the present embodiment. [Figure 18] It is a process cross-sectional view showing a method for manufacturing a semiconductor device according to the present embodiment. Description of Embodiments

[0015] The conveying device according to the present embodiment is used in a laser irradiation device such as a laser annealing device. The laser annealing device is, for example, an excimer laser annealing (ELA) device for forming a low temperature polysilicon (LTPS) film. Hereinafter, the conveying device, the laser irradiation device, the method, and the manufacturing method according to the present embodiment will be described with reference to the drawings.

[0016] Embodiment 1. The basic configurations of the conveying device and the laser irradiation device according to the present embodiment will be described with reference to FIGS. 1 to 3. FIG. 1 is a top view schematically showing the basic configuration of a conveying device 600. FIG. 2 is a side cross-sectional view schematically showing the configuration of the conveying device. FIG. 3 is a side cross-sectional view schematically showing the configuration of the conveying device.

[0017] For the sake of simplicity, the following diagrams use a three-dimensional xyz orthogonal coordinate system. The z-direction is the vertical up-and-down direction, and the y-direction is the line direction along the linear irradiation area 15a. The x-direction is perpendicular to both the z-direction and the y-direction. In other words, the y-direction is the longitudinal direction of the linear irradiation area 15a, and the x-direction is the short-direction perpendicular to the longitudinal direction.

[0018] Figures 1 to 3 are conceptual diagrams showing only the basic configurations of the transport device and the laser irradiation device, and some components have been omitted. For example, in Figure 1, the transport device 600 is shown in a simplified form. Specifically, in Figure 1, the laser irradiation unit 14, the precision levitation unit 111, and the rough levitation unit 113 are omitted.

[0019] As shown in Figures 1 to 3, the laser irradiation device 1 comprises a main levitation unit 10, a transport unit 11, and a laser irradiation section 14. The main levitation unit 10 and the transport unit 11 constitute the transport device 600. Furthermore, the transport device 600 may also include an end levitation unit 18.

[0020] As shown in Figure 2, the main levitation unit 10 is configured to eject gas from its surface. The main levitation unit 10 levitates the substrate 100 on its upper surface. The gas ejected from the surface of the main levitation unit 10 is blown onto the underside of the substrate 100, causing the substrate 100 to levitate. For example, the substrate 100 is a glass substrate. When the substrate 100 is being transported, the main levitation unit 10 adjusts the amount of levitation so that the substrate 100 does not come into contact with other mechanisms (not shown) located above the substrate 100.

[0021] The main levitation unit 10 is mainly divided into a precision levitation region 31 and a rough levitation region 33. The precision levitation region 31 is the region that includes the irradiation region 15a of the laser beam 15. That is, in an xy-plane view, the precision levitation region 31 is the region that overlaps with the focal point (irradiation region 15a) of the laser beam. The precision levitation region 31 is larger than the irradiation region 15a.

[0022] The rough levitation region 33 is adjacent to the precision levitation region 31. In the x-direction, the rough levitation region 33 is located on both sides of the precision levitation region 31. In the xy-plane view, the rough levitation region 33 is a region that does not overlap with the focal point of the laser beam (irradiation region 15a).

[0023] The precision levitation unit 111 and the rough levitation unit 113 each eject gas (for example, air) upwards. The gas ejected from the precision levitation unit 111 and the rough levitation unit 113 may be an inert gas such as nitrogen. The substrate 100 levitates when the gas is blown onto its underside. As a result, the main levitation unit 10 and the substrate 100 are in a non-contact state. Furthermore, the precision levitation unit 111 sucks in the gas present between the substrate 100 and the main levitation unit 10. The rough levitation unit 113 may or may not be configured to suck in gas in the same way as the precision levitation unit 111.

[0024] The precision levitation unit 111 and the rough levitation unit 113 are connected to, for example, a gas supply source (not shown) for supplying gas. The precision levitation unit 111 and the rough levitation unit 113 are also connected to a vacuum source (not shown) for suctioning gas. The gas supply source is a compressor or gas cylinder, which supplies compressed gas. The vacuum source is a vacuum pump or ejector.

[0025] The precision levitation unit 111 has higher levitation accuracy than the rough levitation unit 113. The laser beam is irradiated onto the substrate 100 in the precision levitation region 31, where the levitation accuracy is highest. A semi-precision levitation unit may be provided between the precision levitation unit 111 and the rough levitation unit 113. The semi-precision levitation unit has lower levitation accuracy than the precision levitation unit 111, but higher levitation accuracy than the rough levitation unit 113.

[0026] For example, in the irradiation area 15a and the surrounding precision levitation area 31, high precision is required for the amount of levitation of the substrate 100. Therefore, a precision levitation unit 111 that can control the amount of levitation with high precision is used. The precision levitation unit 111 is a precision levitation unit formed from a porous material such as ceramic.

[0027] The precision levitation unit 111 then ejects gas upward. The precision levitation unit 111 may also be provided with suction holes for drawing in gas. Suction holes reaching the upper surface are machined into the porous body at predetermined intervals. The suction holes are fine holes, creating negative pressure between the substrate 100 and the precision levitation unit. The porous body then ejects gas from almost its entire surface, excluding the suction holes. The ejection surface that forms positive pressure is formed on almost its entire surface, excluding the suction holes.

[0028] The rough levitation unit 113 is made of a metal material. For example, the rough levitation unit 113 is made of a metal block having a hollow portion. Multiple ejection holes are formed that reach from the hollow portion to the upper surface of the metal block. Furthermore, the metal block may be provided with suction holes for drawing in gas. The semi-precision levitation unit may also be made of a metal material in the same way as the rough levitation unit 113.

[0029] The rough levitation unit 113 and the precision levitation unit 111 are collectively referred to as a levitation unit cell 131. Multiple rough levitation units 113 are provided as a levitation unit cell 131 in the rough levitation region 33. Multiple precision levitation units 111 are provided as a levitation unit cell 131 in the precision levitation region 31. A semi-precision levitation region may be provided between the precision levitation region 31 and the rough levitation region 33.

[0030] The base 120 is, for example, a metal plate. The precision levitation unit 111 and the rough levitation unit 113 are fixed to the base 120 by, for example, bolts. The upper surfaces of the precision levitation unit 111 and the rough levitation unit 113 are substantially at the same height. That is, the upper surface (levitation surface) of the main levitation unit 10 is substantially flat. The surface of the base 120 may be polished or otherwise processed to have a predetermined degree of flatness. In addition, an internal space (not shown) that serves as a flow path for ejecting or sucking in gas may be provided inside the base 120. The levitation unit cell 131 may suck in or eject gas through the internal space of the base 120.

[0031] An end levitation unit 18 is provided on the +y side of the main levitation unit 10. The end levitation unit 18 is positioned directly below the edge of the substrate 100. The end levitation unit 18 ejects gas onto the underside of the substrate 100, similar to the main levitation unit 10. The gas ejected from the upper surface of the end levitation unit 18 causes the edge of the substrate 100 to levitate. The end levitation unit 18 has the same configuration as the rough levitation unit. The end levitation unit 18 is made of a metal material having ejection holes, etc.

[0032] The transport unit 11 transports the levitating substrate 100 in the transport direction. The transport unit 11 is located on the +y-direction end side of the main levitation unit 10. Specifically, in the y-direction, the transport unit 11 is positioned between the main levitation unit 10 and the end levitation unit 18. As shown in Figure 3, the transport unit 11 includes a holding mechanism 12, a movable levitation unit 17, an x-movement mechanism 220, a y-movement mechanism 230, and a lifting mechanism 240.

[0033] The holding mechanism 12 holds the substrate 100. For example, the holding mechanism 12 can be constructed using a vacuum suction mechanism. The vacuum suction mechanism is made of a metal material, a resin-based material, or a porous material, etc. Suction grooves or suction holes are formed on the upper surface of the holding mechanism 12. The holding mechanism 12 may also be made of a porous material.

[0034] The holding mechanism 12 (vacuum suction mechanism) is connected to an exhaust port (not shown), which is connected to an ejector or vacuum pump. Therefore, a negative pressure for drawing gas acts on the holding mechanism 12, allowing the substrate 100 to be held using the holding mechanism 12.

[0035] The holding mechanism 12 holds the substrate 100 by attracting the surface opposite to the surface (bottom surface) of the substrate 100 that is irradiated by the laser beam 15 (top surface), that is, the surface of the substrate 100 that faces the main levitation unit 10. In Figure 1, the holding mechanism 12 holds the edge of the substrate 100 in the +y direction.

[0036] As shown in Figure 3, the holding mechanism 12 is supported by a lifting mechanism 240 for performing suction operations. The lifting mechanism 240 raises and lowers the holding mechanism 12. The lifting mechanism 240 is equipped with actuators such as an air cylinder or a motor. Furthermore, the lifting mechanism 240 has a linear guide mechanism along the Z direction. Therefore, the lifting mechanism 240 moves the holding mechanism 12 up and down. For example, when the holding mechanism 12 is raised to the suction position, it picks up the substrate 100. Also, when the suction is released, the holding mechanism 12 lowers to the standby position.

[0037] A movable levitation unit 17 is positioned around the holding mechanism 12. The movable levitation unit 17 ejects gas onto the substrate 100. The movable levitation unit 17 ejects gas onto the underside of the substrate 100, similar to the main levitation unit 10. The edges of the substrate 100 levitate due to the gas ejected from the upper surface of the movable levitation unit 17. For example, the movable levitation unit 17 has a similar configuration to the rough levitation unit 113. The movable levitation unit 17 is made of a metal material having ejection holes, etc.

[0038] The movable levitation unit 17 is provided with an opening 171 for arranging the holding mechanism 12. The holding mechanism 12 is positioned inside the opening 171 provided in the movable levitation unit 17. As shown in Figure 1, the opening 171 is provided along the y-direction. Specifically, in an xy-plane view, the opening 171 is formed in a rectangular shape with the y-direction as the longitudinal direction and the x-direction as the short direction.

[0039] Furthermore, the movable levitation unit 17 is provided with a plurality of openings 171. The plurality of openings 171 are arranged along the x-direction. In Figure 1, eight openings 171 are arranged along the x-direction, but the number of openings 171 may be one or more. A holding mechanism 12 is positioned in each opening 171. Each holding mechanism 12 holds the substrate 100 by suction.

[0040] The y-movement mechanism 230 moves the holding mechanism 12 in the y-direction. For example, the holding mechanism 12 and the lifting mechanism 240 are positioned on top of the y-movement mechanism 230. In other words, the y-movement mechanism 230 movably supports the holding mechanism 12 and the lifting mechanism 240. The y-movement mechanism 230 has an actuator, such as a motor (not shown). The y-movement mechanism 230 moves the holding mechanism 12 and the lifting mechanism 240 in the y-direction. As a result, the holding mechanism 12 moves the opening 171 in the y-direction.

[0041] The x-movement mechanism 220 moves the holding mechanism 12, the movable levitation unit 17, the lifting mechanism 240, and the y-movement mechanism 230 in the x-direction. For example, the x-movement mechanism 220 includes a guide section 221 and a movable section 222. The guide section 221 is a stage that movably supports the movable section 222. The guide section 221 is provided along the x-direction. The x-movement mechanism 220 has an actuator, such as a motor (not shown). Driven by the actuator, the movable section 222 moves along the x-direction on the guide section 221.

[0042] Furthermore, a y-movement mechanism 230 is provided on top of the movable part 222. In other words, the movable part 222 supports the y-movement mechanism 230 so that it can move in the y-direction. Guide mechanisms such as guide grooves or guide rails may be formed on the movable part 222 along the y-direction.

[0043] The movable part 222 slides in the x-direction on the guide part 221. Furthermore, the y-movement mechanism 230 slides in the y-direction on the movable part 222. In this way, the holding mechanism 12 moves in both the x-direction and the y-direction. Therefore, the transport unit 11 can transport the substrate 100 in both the x-direction and the y-direction. By adjusting the movement speed in the x-direction and the movement speed in the y-direction, the transport direction of the substrate 100 can be changed. In other words, by increasing the ratio of the movement speed in the y-direction to the movement speed in the x-direction, the angle between the x-direction and the transport direction can be increased. By setting the movement speed in the y-direction to 0, the transport direction becomes parallel to the x-direction.

[0044] Furthermore, the movable part 222 supports the movable levitation unit 17. Therefore, the movable part 222 moves the movable levitation unit 17 in the x direction together with the y-movement mechanism 230. Consequently, the movable levitation unit 17, the y-movement mechanism 230, the lifting mechanism 240, and the holding mechanism 12 move together with the movable part 222. The movable part 222 becomes a stage that movably supports the y-movement mechanism 230 and the movable levitation unit 17, etc.

[0045] As shown in Figure 1, for example, the transport unit 11 is configured to slide along the transport direction at the +y end of the main levitation unit 10. Furthermore, the x-movement mechanism 220 and the y-movement mechanism 230 are controlled independently. By adjusting the movement speeds of the x-movement mechanism 220 and the y-movement mechanism 230, the transport speed and transport direction of the substrate 100 can be controlled.

[0046] The x-movement mechanism 220 and the y-movement mechanism 230 may include, for example, actuators such as motors (not shown), linear guide mechanisms, air bearings, etc. The x-movement mechanism 220 and the y-movement mechanism 230 move the holding mechanism 12 in the x and y directions in synchronous motion.

[0047] As shown in Figures 4 and 5, the substrate 100 is transported in the transport direction as the holding mechanism 12 moves along the transport direction. The transport direction is inclined from the x direction. In Figures 4 and 5, a straight line parallel to the x direction is shown as a dashed line. If the angle between the x direction and the transport direction is θ, then θ is greater than 0°. By changing the movement speed of at least one of the x and y directions, the angle θ of the transport direction relative to the x direction can be changed. This allows the substrate 100 to be transported at an angle suitable for the process. Also, by stopping the y movement mechanism 230, θ can be set to 0°.

[0048] By independently changing the movement speed in the x or y direction, the angle θ of the transport direction can be adjusted. This allows for transport that is suitable for the process. Furthermore, as shown in Figure 6, it is also possible to move the y-movement mechanism 230 in the +y direction. In this case, the sign of the angle θ of the transport direction can be changed. Specifically, if θ is a positive value in the configuration shown in Figure 4, then θ will be a negative value in the configuration shown in Figure 6. In other words, in Figure 6, θ becomes less than 0°. It is possible to tilt the transport direction so that the angle θ of the transport direction relative to the x direction is not only a positive value but also a negative value. For example, θ can be varied within the range of -5° to +5°.

[0049] Furthermore, as shown in Figure 1, the main levitation unit 10 is rectangular in shape in an xy-plane view. Specifically, in an xy-plane view, the main levitation unit 10 is a rectangle with two sides parallel to the x-direction and two sides parallel to the y-direction. The transport direction is inclined from the edges of the main levitation unit 10. In other words, as movement in the +x direction occurs, the holding mechanism 12 approaches the main levitation unit 10. The substrate 100 is also rectangular in shape. The edges of the substrate 100 are positioned inclined from the x-direction and the y-direction. For example, the edges of the substrate 100 may be positioned parallel to the transport direction. Alternatively, the edges of the substrate 100 may be positioned in a direction inclined from the transport direction.

[0050] As shown in Figure 4, the transport direction is parallel to the edge of the substrate 100. In this case, as shown in Figures 4 and 5, the angle between the edge of the substrate 100 and the x-direction is also θ. Furthermore, the angle of the edge of the substrate 100 relative to the transport direction can be adjusted by rotating the substrate 100 around the z-axis. For example, the substrate 100 can be rotated in the range of -5° to 5°. In this way, even if the angle θ between the x-direction and the transport direction is changed, the transport direction and the direction of the edge of the substrate 100 can be made parallel. Of course, the transport direction and the direction of the edge of the substrate 100 may be different directions.

[0051] As shown in Figure 2, the substrate 100 is irradiated with laser light 15. Here, the irradiation area 15a of the substrate 100 is line-shaped with the y-direction as the longitudinal direction. In other words, the irradiation area 15a has the y-direction as the longitudinal direction (line direction) and the x-direction as the short direction.

[0052] For example, the laser irradiation unit 14 has an excimer laser light source that generates laser light. Furthermore, the laser irradiation unit 14 has an optical system that guides the laser light to the substrate 100. The laser irradiation unit 14 has a lens that focuses the laser light 15 onto the substrate 100. For example, the laser irradiation unit 14 has a cylindrical lens for forming a line-shaped irradiation area 15a. The substrate 100 is irradiated with a line-shaped laser beam 15 (line beam), specifically one whose focal point extends in the y-direction. A focal point of the laser beam 15 is formed on the substrate 100. Therefore, in order to suppress in-plane variation, high precision is required in the amount of levitation in the precision levitation region 31.

[0053] The substrate 100 is, for example, a glass substrate on which an amorphous silicon film (amorphous silicon film 101a) is formed. By irradiating the amorphous film with laser light 15 and performing an annealing treatment, the amorphous film can be crystallized. For example, the amorphous silicon film 101a can be converted into a polycrystalline silicon film (polysilicon film 101b).

[0054] In the laser irradiation device 1, the substrate 100 is levitated using the main levitation unit 10, and the substrate 100 is transported in the transport direction while the lower surface of the substrate 100 is held by the transport unit 11. At this time, when the substrate 100 is transported, the transport unit 11 of the laser irradiation device 1 maintains a position in which the transport unit 11 does not overlap with the irradiation area 15a in a plan view (i.e., viewed from the z direction) while transporting the substrate 100. In other words, as shown in Figure 1, when the substrate 100 is transported in the transport direction, the position in which the transport unit 11 holds the substrate 100 (corresponding to the position of the holding mechanism 12) does not overlap with the irradiation area 15a.

[0055] For example, the planar shape of the substrate 100 is a quadrilateral (rectangular) with four sides, and the transport unit 11 (holding mechanism 12) holds only one of the four sides of the substrate 100. Furthermore, the transport unit 11 (holding mechanism 12) holds the substrate 100 in a position where it is not irradiated by laser light during the period in which it is being transported.

[0056] This configuration allows the transport unit 11 to hold the substrate 100 (corresponding to the position of the holding mechanism 12) and the irradiation area 15a to be separated. The irradiation area 15a is approximately half of the -y side of the substrate 100, and the transport unit 11 holds the +y end. The distance between the area where deflection is greatest near the holding mechanism 12 and the irradiation area 15a can be increased. Therefore, the effect of deflection caused by the holding mechanism 12 on the substrate 100 during laser irradiation can be reduced.

[0057] As shown in Figure 4, the length of the irradiation area 15a in the y-direction is approximately half the length of the substrate 100. As shown in Figure 5, as the substrate 100 is transported, the laser light is irradiated to the area of ​​the irradiation area 15a corresponding to its length. Then, the polysilicon film 101b is formed in the area that has been irradiated with laser light.

[0058] As the substrate 100 passes through the irradiation area 15a once, the amorphous silicon film 101a crystallizes in approximately half of the substrate 100. Then, the substrate 100 is rotated 180 degrees around the z axis by a rotation mechanism (not shown), and the transport unit 11 transports the substrate 100 in the -x direction. Alternatively, after transporting the rotated substrate 100 in the -x direction, the transport unit 11 may transport it again in the +x direction. During transport in the -x direction, or during transport in the +x direction again after the 180-degree rotation, the laser beam is irradiated onto the substrate 100. As a result, the substrate 100 passes through the irradiation area 15a, and the amorphous silicon film 101a crystallizes in the remaining half of the substrate 100. In this way, by moving the substrate 100 back and forth, the amorphous silicon film 101a is converted to a polysilicon film 101b in almost the entire substrate 100.

[0059] Furthermore, the transport direction is inclined from the x-direction, which is perpendicular to the linear irradiation area 15a. In other words, the substrate 100 is transported in a transport direction that is inclined from the edge of the rectangular substrate 100. In a top view, by making the transport direction inclined from the x-direction, substrate transport suitable for the laser irradiation process can be achieved. Therefore, the crystallization process of the silicon film can be carried out appropriately, and the display quality can be improved. With this configuration, for example, the occurrence of moiré patterns can be prevented.

[0060] For example, suppose substrate 100 is a glass substrate for an organic EL display device. If the display area of ​​the organic EL display device is rectangular, the edges of the display area will be arranged parallel to the edges of substrate 100. In other words, the organic EL display device will have a rectangular display area with the x and y directions as its shorter sides. When the transport direction is parallel to the x direction, the laser beam is shone onto substrate 100 with the pixel arrangement direction and the irradiation area 15a being parallel.

[0061] As shown in this embodiment, the laser irradiation process can be performed appropriately by making the transport direction inclined from the x-direction. In a top view, the moving mechanism moves the holding mechanism 12 in a transport direction inclined from the x-direction, which is perpendicular to the longitudinal direction of the linear irradiation area 15a, in order to change the laser irradiation position on the substrate 100. Therefore, the crystallization process of the silicon film can be performed appropriately. For example, the occurrence of moiré patterns can be prevented, and the display quality can be improved.

[0062] Furthermore, the transport unit 11 is capable of two-axis movement. That is, the holding mechanism 12 moves not only in the x direction but also in the y direction. In this case, it is necessary to widen the gap between the main levitation unit 10 and the end levitation unit 18. In other words, in the Y direction, the end levitation unit 18 needs to be installed away from the main levitation unit 10. Even in such a case, the deflection of the substrate 100 can be suppressed by providing the movable levitation unit 17. Gas is ejected from the underside of the substrate 100 in the gap between the end levitation unit 18 and the main levitation unit 10. This prevents the substrate 100 from deflecting and coming into contact with the main levitation unit 10 or its surrounding structures.

[0063] Furthermore, the movable levitation unit 17 is provided with an opening 171. The holding mechanism 12 moves in the y-direction within the opening 171. Therefore, the transport direction of the substrate 100 can be adjusted with a simple configuration. In addition, the movable levitation unit 17 is provided with multiple openings 171. As a result, multiple holding mechanisms 12 can hold the substrate 100, so the substrate 100 can be reliably held by suction.

[0064] According to this embodiment, the transport device is a transport device that transports a substrate in order to irradiate the substrate with a line-shaped laser beam. The transport device includes a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface, a holding mechanism positioned outside the main levitation unit and holding the substrate on the main levitation unit, a first moving mechanism that moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam on the substrate, and a second moving mechanism that moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam on the substrate.

[0065] According to another embodiment, the transport device is a transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam. The transport device comprises a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface; a levitation unit positioned outside the main levitation unit and having an opening provided along a first direction and ejecting gas onto the lower surface of the substrate; a holding mechanism positioned at the opening and holding the substrate; and a first moving mechanism that moves the holding mechanism and the levitation unit along the first direction.

[0066] According to this embodiment, the transport method is a transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, wherein the transport device comprises a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface, and a holding mechanism positioned outside the main levitation unit and holding the substrate on the main levitation unit, wherein the transport method comprises (A1) a step of moving the holding mechanism in a first direction by a first moving mechanism in order to change the irradiation position of the laser beam on the substrate, and (A2) a step of moving the holding mechanism and the first moving mechanism in a second direction tilted from the first direction by a second moving mechanism in order to change the irradiation position of the laser beam on the substrate.

[0067] According to another embodiment, the transport method is a transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, comprising: a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface; a movable levitation unit positioned outside the main levitation unit and having an opening provided along a first direction and ejecting gas onto the lower surface of the substrate; and a holding mechanism positioned in the opening that holds the substrate, wherein (B1) a first moving mechanism comprises the step of moving the holding mechanism and the movable levitation unit along the first direction.

[0068] According to this embodiment, a method for manufacturing a semiconductor device comprises (sa1) the step of forming an amorphous film on a substrate, (sa2) the step of transferring the substrate on which the amorphous film is formed to a transport device, and (sa3) the step of annealing the amorphous film to form a crystallized film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, wherein the transport device comprises a main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam and levitating the substrate on its upper surface, a holding mechanism positioned outside the main levitation unit and holding the substrate on the main levitation unit, a first moving mechanism that moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam on the substrate, and a second moving mechanism that moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam on the substrate.

[0069] According to another embodiment, a method for manufacturing a semiconductor device comprises: (sb1) forming an amorphous film on a substrate; (sb2) transferring the substrate on which the amorphous film is formed onto a transport device; and (sb3) annealing the amorphous film to form a crystallized film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, wherein the transport device has an irradiation area positioned directly below the irradiation position of the laser beam and a main levitation unit that levitates the substrate on its upper surface; a levitation unit positioned outside the main levitation unit and having an opening provided along a first direction for ejecting gas to the lower surface of the substrate; a holding mechanism positioned in the opening for holding the substrate; and a step of moving the holding mechanism and the levitation unit along the first direction by a first movement mechanism.

[0070] (Circular transport) Next, an example of the configuration of the conveying device 600 will be explained using Figure 7. Figure 7 is a top view showing the configuration of the conveying device 600. Note that explanations of the same content as those described in Figures 1 to 6 will be omitted as appropriate.

[0071] The transport device 600 includes a main levitation unit 10 and end levitation units 671 to 676. The main levitation unit 10 levitates the substrate (not shown in Figure 7), which is the object to be processed. In a top view, the main levitation unit 10 is rectangular in shape. The main levitation unit 10 has two sides parallel to the y-direction and two sides parallel to the x-direction. The end levitation units 671 to 676 levitate the ends of the substrate that extend beyond the main levitation unit 10.

[0072] For the purpose of explanation, the main levitation unit 10 is divided into six regions 60a to 60f in a top view. Specifically, the main levitation unit 10 comprises a first region 60a to a fourth region 60d, a process region 60e, and a passage region 60f. The first region 60a is the corner on the -x side and the +y side (Figure 7 The second region 60b is a rectangular area including the upper left corner (Figure). 7 The third region 60c is a rectangular area including the upper right corner (in the figure). The third region 60c is the corner on the +x side and -y side (Figure 7 This is a rectangular region including the lower right corner (in the figure). The fourth region 60d is the corner on the -x side and the -y side (Figure 7 This is a rectangular region that includes the lower left corner of the map.

[0073] The process region 60e is a rectangular region located between the first region 60a and the second region 60b. The process region 60e includes the irradiation region 15a to which the laser light is irradiated. The passage region 60f is a rectangular region located between the third region 60c and the fourth region 60d.

[0074] Half of the region on the +y side of the main levitation unit 10 (Figure) 7 The upper half of the region is on the -x side (Figure 7Starting from the left side, the regions are the first region 60a, the process region 60e, and the second region 60b. The -y side half of the main levitation unit 10 (Figure 7 The lower half of the region consists of, in order from the +x side, the third region 60c, the passing region 60f, and the fourth region 60d.

[0075] Furthermore, the fourth region 60d is both an input region where the substrate 100 (see Figure 8) is loaded and an output region where the substrate 100 is unloaded. For example, a transfer machine (not shown), such as a transfer robot, is provided on the -x side of the fourth region 60d. The transfer machine then loads the substrate 100 into the fourth region 60d. Similarly, the transfer machine unloads the substrate from the fourth region 60d.

[0076] The main levitation unit 10 includes a rotation mechanism 68 and alignment mechanisms 69a and 69b. The rotation mechanism 68 rotates the substrate. The alignment mechanisms 69a and 69b align the substrate. Alignment mechanisms 69a and 69b are provided in the first region 60a and the second region 60b, respectively. The rotation mechanism 68 is provided in the fourth region 60d. The operation of the rotation mechanism 68 and the alignment mechanisms 69a and 69b will be described later.

[0077] The end levitation units 671-676 are positioned outside the main levitation unit 10. The end levitation units 671-676 are positioned along the outer circumference of the rectangular main levitation unit 10. The end levitation units 671-676 are provided along the edges of the main levitation unit 10. In a top view, the end levitation units 671-676 are positioned to surround the outer circumference of the main levitation unit 10.

[0078] End levitation units 671 and 672 are located on the -x side of the main levitation unit 10. End levitation unit 673 is located on the +y side of the main levitation unit 10. End levitation unit 674 is located on the +x side of the main levitation unit 10. End levitation units 675 and 676 are located on the -y side of the main levitation unit 10.

[0079] The end levitation units 671 and 672 are positioned along the -x side edge of the main levitation unit 10. In other words, the end levitation units 671 and 672 are provided along the y direction. Furthermore, the width of the end levitation unit 671 in the x direction is wider than that of the end levitation unit 672. The end levitation unit 671 is positioned on the -y side of the end levitation unit 672.

[0080] The end levitation unit 673 is positioned along the +y side edge of the main levitation unit 10. In other words, the end levitation unit 673 is provided along the x direction. The end levitation unit 674 is positioned along the +x side edge of the main levitation unit 10. In other words, the end levitation unit 674 is provided along the y direction.

[0081] The end levitation units 675 and 676 are positioned along the -y-side end of the main levitation unit 10. In other words, the end levitation units 675 and 676 are provided along the x-direction. Furthermore, the width of the end levitation unit 676 in the y-direction is wider than that of the end levitation unit 675. The end levitation unit 676 is positioned on the -x side of the end levitation unit 675.

[0082] A transport unit 11a is provided between the main levitation unit 10 and the end levitation unit 671. A transport unit 11a is also positioned between the main levitation unit 10 and the end levitation unit 672. The transport unit 11a is formed along the y-direction. The transport unit 11a transports the substrate in the +y direction. In other words, the transport unit 11a transports the substrate 100 from the fourth region 60d toward the first region 60a.

[0083] A transport unit 11b is provided between the main levitation unit 10 and the end levitation unit 673. The transport unit 11b is formed along the x-direction. The transport unit 11b transports the substrate in a transport direction inclined from the x-direction. In other words, the transport unit 11b transports the substrate 100 from the first region 60a to the second region 60b.

[0084] A transport unit 11c is provided between the main levitation unit 10 and the end levitation unit 674. The transport unit 11c is formed along the y-direction. The transport unit 11c transports the substrate 100 in the -y direction. In other words, the transport unit 11c transports the substrate 100 from the second region 60b to the third region 60c.

[0085] A transport unit 11d is provided between the main levitation unit 10 and the end levitation unit 675. The transport unit 11d moves between the main levitation unit 10 and the end levitation unit 676. The transport unit 11d is formed along the x-direction. The transport unit 11a transports the substrate in the -x direction. In other words, the transport unit 11d transports the substrate 100 from the third region 60c to the fourth region 60d.

[0086] The transport unit 11b has the same configuration as the transport unit 11 shown in Figures 1 and 3. Although simplified in Figures 7 and 8, the transport unit 11b has the same configuration as shown in Figures 1 and 3. Therefore, the transport unit 11b has the holding mechanism 12, x-movement mechanism 220, y-movement mechanism 230, etc. shown in Figure 3. The transport unit 11b is capable of two-axis movement and moves the substrate 100 in the x-direction and y-direction. Therefore, the transport direction of the substrate 100 is inclined from the x-direction.

[0087] The transport units 11a, 11c, and 11d differ from the transport unit 11 in Figure 1, as they are capable of uniaxial movement only. Specifically, transport units 11a and 11c hold the substrate 100 and transport it only in the y-direction. Transport unit 11d holds the substrate 100 and transports it only in the x-direction. Each of the transport units 11a, 11c, and 11d is equipped with a holding mechanism that vacuum-suctions the substrate 100 and a moving mechanism that moves the holding mechanism.

[0088] Referring to Figure 8, the transport unit 11a is equipped with a holding mechanism 12a and a moving mechanism 13a. Similarly, the transport unit 11c is equipped with a holding mechanism 12c and a moving mechanism 13c, and the transport unit 11d is equipped with a holding mechanism 12d and a moving mechanism 13d. The holding mechanisms 12a, 12c, and 12d hold the substrate 100 by suction. The movement direction of the moving mechanisms 13a and 13c is parallel to the y-direction. The movement direction of the moving mechanism 13d is parallel to the x-direction. In addition, the transport units 11a, 11c, and 11d have a lifting mechanism (not shown) for moving the substrate 100 up and down.

[0089] As shown in Figure 7, the laser irradiation area 15a has its longitudinal direction in the y-direction. In other words, a linear irradiation area 15a with its longitudinal direction in the y-direction is formed. The laser light is irradiated onto the substrate 100 while the substrate 100 is being transported in the transport direction. The laser irradiation process is performed while the substrate is moving from the first area 60a to the second area 60b. In this embodiment as well, the amorphous silicon film is converted into a polysilicon film by irradiating the substrate with laser light from a laser light source.

[0090] Furthermore, in the main levitation unit 10, precision levitation units 111 are positioned in the irradiation area 15a and its periphery. The precision levitation units 111 have higher accuracy in levitation amount than the rough levitation unit 113. Therefore, the process area 60e, which includes the irradiation area 15a, is irradiated with laser light with a higher accuracy in levitation amount than the other areas 60a-60d and 60f. This allows for stable irradiation of the substrate 100 with laser light. In addition, areas other than the irradiation area 15a, such as the passage area 60f, the third area 60c, and the fourth area 60d, are created without using the expensive precision levitation units 111. Thus, equipment costs can be reduced.

[0091] The transport unit 11b has a movable levitation unit 17. Transport units 11a, 11c, and 11d do not have a movable levitation unit 17. Therefore, transport unit 11b is formed wider than transport units 11a, 11c, and 11d. For example, the width of transport unit 11b in the y-direction is wider than the width of transport unit 11d in the y-direction. Similarly, the width of transport unit 11b in the y-direction is wider than the width of transport units 11a and 11c in the x-direction.

[0092] Thus, the widthwise size of the transport unit 11b is larger than the widthwise size of the transport units 11a, 11c, and 11d. Therefore, the gap between the end levitation unit 673 and the main levitation unit 10 is wider than the gap between the main levitation unit 10 and the other end levitation units. For example, the gap between the end levitation unit 673 and the main levitation unit 10 in the y-direction is wider than the gap between the end levitation unit 675 and the main levitation unit 10 in the y-direction.

[0093] Next, the procedure for transporting the substrate using the main levitation unit 10 will be explained using Figures 8 to 15. Here, the fourth region 60d is the loading and unloading position for the substrate 100. The substrate 100 loaded into the fourth region 60d is then transported in the following order: first region 60a, process region 60e, second region 60b, third region 60c, passing region 60f, and fourth region 60d. In other words, the substrate 100 circles along the edge of the main levitation unit 10. Here, the substrate 100 completes two rotations in order to irradiate the entire substrate 100 with laser light. That is, the substrate 100 is transported in a manner that circulates twice over the main levitation unit 10. In this way, almost the entire surface of the substrate 100 is irradiated with laser light.

[0094] The following describes the transport method in detail. As shown in Figure 8, the substrate 100 is transported into the fourth region 60d. The substrate 100 transported into the fourth region 60d is levitated by the main levitation unit 10 and the end levitation units 671, 672, and 676. Specifically, the -x end of the substrate 100 is levitated by the end levitation units 671 and 672, the central part is levitated by the main levitation unit 10, and the -y end of the substrate 100 is levitated by the end levitation unit 676. The holding mechanism 12a of the transport unit 11a then holds the substrate 100.

[0095] Next, as shown in Figure 9, the substrate 100a in the fourth region 60d is transported to the first region 60a. In Figure 9, the substrate that has moved to the first region 60a is shown as substrate 100b. The holding mechanism 12a of the transport unit 11a holds the substrate 100a. Then, the moving mechanism 13a moves the holding mechanism 12a in the +y direction, causing the substrate 100a to move from the fourth region 60d to the first region 60a (white arrow in Figure 9).

[0096] Here, in an xy-plane view, the holding mechanism 12a moves in the +y direction, passing between the main levitation unit 10 and the end levitation unit 671. Furthermore, in an xy-plane view, the holding mechanism 12a moves in the +y direction, passing between the main levitation unit 10 and the end levitation unit 672. Therefore, the substrate 100b is levitated by the main levitation unit 10 and the end levitation units 672 and 673. In other words, the -x side end of the substrate 100b is levitated by the end levitation unit 672, the central part is levitated by the main levitation unit 10, and the +y side end of the substrate 100b is levitated by the end levitation unit 673.

[0097] Here, the transport unit 11b has a movable levitation unit 17, as shown in Figures 1 to 3. When the substrate 100 moves from the fourth region 60d to the first region 60a, the +Y side end of the substrate 100 passes through the gap between the main levitation unit 10 and the end levitation unit 673. At this time, the movable levitation unit 17 sprays gas onto the substrate 100. This prevents the substrate 100 from bending and coming into contact with the edges of the main levitation unit 10 and the end levitation unit 673 or the surrounding structures. As described above, the gap from the end levitation unit 673 to the main levitation unit 10 is wider than the gap from other end levitation units to the main levitation unit 10. Even in such a case, the bending of the substrate 100 can be suppressed by providing the movable levitation unit 17 in the transport unit 11b.

[0098] Next, as shown in Figure 10, the alignment mechanism 69a aligns the position and angle of the substrate 100b that has been transported to the first region 60a. For example, the position and rotation angle of the substrate 100 may shift slightly due to the loading, transporting, and rotational operations of the substrate 100. The alignment mechanism 69a corrects for these shifts in position and rotation angle. This allows for precise control of the laser beam irradiation position on the substrate 100.

[0099] For example, the alignment mechanism 69a is movable in the y-direction and rotatable around the z-axis. Furthermore, the alignment mechanism 69a is movable in the z-direction. For example, the alignment mechanism 69a is equipped with an actuator such as a motor. Positional and angular displacement amounts are determined from images of the substrate 100b captured by a camera or the like. Based on these displacement amounts, the alignment mechanism 69a performs alignment.

[0100] An alignment mechanism 69a is positioned directly beneath the center of the substrate 100b. The alignment mechanism 69a holds the substrate 100b. The alignment mechanism 69a may hold the substrate 100b by suction, similar to the holding mechanism 12. The holding mechanism 12a releases its grip on the substrate 100b. As a result, the substrate 100b is transferred from the holding mechanism 12a to the alignment mechanism 69a.

[0101] The alignment mechanism 69a then rotates the substrate 100b around the z-axis (white arrow in Figure 10). The alignment mechanism 69a rotates the substrate 100b so that its edges are parallel to the transport direction. The rotated substrate is shown as substrate 100c. For example, the alignment mechanism 69a rotates the substrate 100 by a predetermined angle around the z-axis. The edges of substrate 100c are parallel to the transport direction of the main levitation unit 10. Once the alignment is complete, the holding mechanism 12 of the transport unit 11b (see Figures 1 and 3) holds the substrate 100b, and the alignment mechanism 69a releases its hold. As a result, the substrate 100c is transferred from the alignment mechanism 69a to the holding mechanism 12 of the transport unit 11b.

[0102] Next, as shown in Figure 11, the transport unit 11b moves the substrate 100d. This causes the substrate 100d to pass through the process area 60e. Here, in an xy-plane view, the holding mechanism 12 moves in a direction inclined from the x-direction, passing between the main levitation unit 10 and the end levitation unit 673. As a result, approximately half of the substrate 100d passes through the irradiation area 15a. Laser light is irradiated onto the substrate 100d as it moves in a direction inclined from the x-direction perpendicular to the irradiation area 15a.

[0103] In an xy-plane view, the holding mechanism 12 moves between the main levitation unit 10 and the end levitation unit 673. Therefore, the substrate 100d is levitated by the main levitation unit 10 and the end levitation unit 673. In other words, the +y side end of the substrate 100d is levitated by the end levitation unit 673, and the central part is levitated by the main levitation unit 10. A laser irradiation process is performed while moving from the first region 60a to the second region 60b.

[0104] Next, as shown in Figure 12, when the substrate 100e moves to the second region 60b, the alignment mechanism 69b aligns the substrate 100e. Here, the alignment mechanism 69b rotates the substrate 100e (white arrow in Figure 12). In Figure 12, the rotated substrate is shown as substrate 100f.

[0105] An alignment mechanism 69b is positioned directly beneath the center of the substrate 100e. The alignment mechanism 69b holds the substrate 100e. The alignment mechanism 69b may hold the substrate 100e by suction, similar to the holding mechanism 12. Furthermore, the holding mechanism 12 releases its grip on the substrate 100e. The substrate 100e is transferred from the holding mechanism 12 of the transport unit 11b to the alignment mechanism 69b.

[0106] The alignment mechanism 69b rotates the substrate 100e around the z-axis (white arrow in Figure 12). The alignment mechanism 69a rotates the substrate 100e so that the edge of the substrate 100e is parallel to the y-direction of the main levitation unit 10. After rotation, the edge of the substrate 100f is parallel to the x-direction or y-direction. Once the alignment is complete, the holding mechanism 12c of the transport unit 11c holds the substrate 100f, and the alignment mechanism 69b releases its hold. This transfers the substrate 100f from the alignment mechanism 69b to the holding mechanism 12c of the transport unit 11c.

[0107] The substrate 100e is levitated by the main levitation unit 10 and the end levitation units 673 and 674. Specifically, the +y side end of the substrate 100e is levitated by the end levitation unit 673, the +x side end of the substrate 100e is levitated by the end levitation unit 674, and the central part is levitated by the main levitation unit 10.

[0108] Next, as shown in Figure 13, the substrate 100f in the second region 60b is transported to the third region 60c. The substrate that has moved to the third region 60c is shown as substrate 100g. In Figure 13, the holding mechanism 12c of the transport unit 11c holds the substrate 100f. Then, the moving mechanism 13c moves the holding mechanism 12c in the -y direction, causing the substrate 100f to move from the second region 60b to the third region 60c (white arrow in Figure 13).

[0109] Here, in an xy-plane view, the holding mechanism 12c moves in the -y direction, passing between the main levitation unit 10 and the end levitation unit 674. Therefore, the substrate 100e is levitated by the main levitation unit 10 and the end levitation units 674 and 675. The +x side end of the substrate 100e is levitated by the end levitation unit 674, and the central part is levitated by the main levitation unit 10. The -y side end of the substrate 100e is levitated by the end levitation unit 675.

[0110] Then, the holding mechanism 12d of the transport unit 11d holds the substrate 100g, and the holding mechanism 12c releases its grip. As a result, the substrate 100g is transferred from the holding mechanism 12c of the transport unit 11c to the holding mechanism 12d of the transport unit 11d.

[0111] Next, as shown in Figure 14, the substrate 100g in the third region 60c is transported to the fourth region 60d. The substrate that has moved to the fourth region 60d is shown as substrate 100h. In Figure 14, the holding mechanism 12d of the transport unit 11d holds the substrate 100g. Then, the moving mechanism 13d moves the holding mechanism 12d in the -x direction, causing the substrate 100f to move from the third region 60c to the fourth region 60d (white arrow in Figure 14).

[0112] Here, in an xy-plane view, the holding mechanism 12d moves in the -x direction, passing between the main levitation unit 10 and the end levitation unit 675. In an xy-plane view, the holding mechanism 12d moves in the -x direction, passing between the main levitation unit 10 and the end levitation unit 676. Therefore, the substrate 100h is levitated by the main levitation unit 10 and the end levitation unit 676. The -y side end of the substrate 100h is levitated by the end levitation unit 676, and the central part is levitated by the main levitation unit 10. The -x side end of the substrate 100h is levitated by the end levitation unit 671.

[0113] In this way, the substrate 100, which was in the fourth region 60d, moves in the order of the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d. In other words, the substrate 100 circles along the edge of the main levitation unit 10.

[0114] Next, as shown in Figure 15, the rotating mechanism 68 rotates the substrate 100h 180° around the z-axis. In other words, the substrate 100h is transferred from the holding mechanism 12d to the rotating mechanism 68. When the rotating mechanism 68 rotates the substrate 100h, the substrate 100h is transferred from the rotating mechanism 68 to the holding mechanism 12d.

[0115] Similarly, the transport units 11a to 11d move the substrate 100h again in the order of the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d. In other words, as shown in Figures 7 to 15, the substrate 100 circles along the edge of the main levitation unit 10.

[0116] Here, the rotation mechanism 68 rotates the substrate 100h by 180°. When the substrate 100e passes through the process area 60e for the second time, the remaining half of the area that was not irradiated by the laser light during the first pass is irradiated with laser light. In this way, the substrate 100 circulates twice along the edge of the main levitation unit 10. Because the substrate 100 rotates by 180° between the first and second laser irradiations, almost the entire surface of the substrate 100 is irradiated with laser light. Note that the position in which the substrate 100 is rotated is not limited to the first area 60a. For example, it may be performed in the second area 60b, the third area 60c, or the fourth area 60d, etc.

[0117] The transport unit 11b transports the substrate 100 in a transport direction inclined from the x-direction, which is perpendicular to the irradiation area 15a. Therefore, the crystallization process of the silicon film can be carried out appropriately. For example, the occurrence of moiré patterns can be prevented, and the display quality can be improved. Of course, the transport direction of the substrate 100 may also be in the x-direction. In a top view, the transport direction of the substrate 100 may be inclined from the y-direction. In other words, the transport direction of the substrate may be parallel to the x-direction, or it may be inclined from the x-direction.

[0118] In the above description, the transport units 11a, 11c, and 11d transported the substrate 100 with its edges parallel to the x and y directions. However, the substrate 100 may also be transported with its edges tilted from the x and y directions. In other words, the transport units 11a, 11c, and 11d may transport the substrate 100 with its edges parallel to the transport direction. In this case, the adjustment of the rotation angle by the alignment mechanisms 69a and 69b becomes unnecessary in Figures 10 and 12. Therefore, the alignment mechanisms 69a and 69b can be omitted.

[0119] Furthermore, when the transport unit 11b transports the substrate 100, in Figure 11 the holding mechanism holds the short side of the substrate 100, but it may also hold the long side of the substrate 100. In this case, after the rotation mechanism 68 rotates the substrate 100 by 90° in Figure 8, the transport unit 11a can transport the substrate 100. Alternatively, the transfer machine may transfer the substrate 100 to the fourth region 60d with the long side of the substrate 100 parallel to the x-direction or the transport direction.

[0120] (OLED display) The semiconductor device having the polysilicon film described above is suitable as a TFT (Thin Film transistor) array substrate for organic EL (ElectroLuminescence) displays. That is, the polysilicon film is used as a semiconductor layer having the source region, channel region, and drain region of the TFT.

[0121] The following describes a configuration in which the semiconductor device according to this embodiment is applied to an organic EL display. Figure 16 is a simplified cross-sectional view showing the pixel circuit of an organic EL display. The organic EL display 300 shown in Figure 16 is an active-matrix type display device in which a TFT is arranged in each pixel PX.

[0122] The organic EL display 300 comprises a substrate 310, a TFT layer 311, an organic layer 312, a color filter layer 313, and a encapsulation substrate 314. Figure 16 shows a top-emission type organic EL display where the encapsulation substrate 314 side is the viewing side. The following description shows one example of the configuration of the organic EL display, and this embodiment is not limited to the configuration described below. For example, the semiconductor device according to this embodiment may be used in a bottom-emission type organic EL display.

[0123] The substrate 310 is a glass substrate or a metal substrate. A TFT layer 311 is provided on the substrate 310. The TFT layer 311 has TFTs 311a arranged in each pixel PX. Furthermore, the TFT layer 311 has wiring (not shown) etc. connected to the TFTs 311a. The TFTs 311a and wiring etc. constitute a pixel circuit.

[0124] An organic layer 312 is provided on top of the TFT layer 311. The organic layer 312 has organic EL light-emitting elements 312a arranged for each pixel PX. Furthermore, the organic layer 312 is provided with partition walls 312b to separate the organic EL light-emitting elements 312a between pixels PX.

[0125] A color filter layer 313 is provided on top of the organic layer 312. The color filter layer 313 is provided with a color filter 313a for color display. That is, each pixel PX is provided with a resin layer colored R (red), G (green), or B (blue) as a color filter 313a.

[0126] A sealing substrate 314 is provided on top of the color filter layer 313. The sealing substrate 314 is a transparent substrate such as a glass substrate and is provided to prevent degradation of the organic EL light-emitting element in the organic layer 312.

[0127] The current flowing through the organic EL light-emitting element 312a of the organic layer 312 changes according to the display signal supplied to the pixel circuit. Therefore, by supplying a display signal corresponding to the displayed image to each pixel PX, the amount of light emitted at each pixel PX can be controlled. This makes it possible to display a desired image.

[0128] In active-matrix display devices such as organic EL displays, one or more TFTs (for example, switching TFTs or driving TFTs) are provided in each pixel PX. Each pixel PX TFT is provided with a semiconductor layer having a source region, a channel region, and a drain region. The polysilicon film according to this embodiment is suitable for the semiconductor layer of the TFT. That is, by using a polysilicon film manufactured by the above manufacturing method as the semiconductor layer of a TFT array substrate, in-plane variations in TFT characteristics can be suppressed. Therefore, display devices with excellent display characteristics can be manufactured with high productivity.

[0129] (Method of manufacturing semiconductor devices) The semiconductor device manufacturing method using the laser irradiation device according to this embodiment is suitable for manufacturing TFT array substrates. The manufacturing method for semiconductor devices having TFTs will be explained with reference to Figures 17 and 18. Figures 17 and 18 are cross-sectional views showing the manufacturing process of a semiconductor device. The following description will explain the manufacturing method for semiconductor devices having inverted staggered type TFTs. Figures 17 and 18 show the polysilicon film formation process in the semiconductor manufacturing method. Note that other manufacturing processes can be done using known methods, so their explanation will be omitted.

[0130] As shown in Figure 17, a gate electrode 402 is formed on a glass substrate 401. A gate insulating film 403 is formed on the gate electrode 402. An amorphous silicon film 404 is formed on the gate insulating film 403. The amorphous silicon film 404 is positioned to overlap with the gate electrode 402 via the gate insulating film 403. For example, the gate insulating film 403 and the amorphous silicon film 404 are continuously deposited by the CVD (Chemical Vapor Deposition) method.

[0131] Then, the glass substrate 401 on which the amorphous silicon film 404 is formed is transported to the transport device 600. By irradiating the amorphous silicon film 404 with laser light L1, a polysilicon film 405 is formed, as shown in Figure 18. That is, the amorphous silicon film 404 is crystallized by the laser irradiation device 1 shown in Figure 1, etc. As a result, a polysilicon film 405, in which silicon has been crystallized, is formed on the gate insulating film 403. The polysilicon film 405 corresponds to the polysilicon film described above. While the transport device 600 is transporting the glass substrate 401, laser light L1 is irradiated. As a result, the amorphous silicon film 404 is annealed and converted into a polysilicon film 405.

[0132] Furthermore, although the laser annealing apparatus according to this embodiment was described as forming a polysilicon film by irradiating an amorphous silicon film with laser light, it may also form a microcrystalline silicon film by irradiating an amorphous silicon film with laser light. Moreover, the laser light used for annealing is not limited to an Nd:YAG laser. In addition, the method according to this embodiment can also be applied to laser annealing apparatuses that crystallize thin films other than silicon films. That is, the method according to this embodiment can be applied to any laser annealing apparatus that forms a crystalline film by irradiating an amorphous film with laser light. According to the laser annealing apparatus according to this embodiment, a substrate with a crystalline film can be appropriately modified.

[0133] It should be noted that the present invention is not limited to the embodiments described above, and can be modified as appropriate without departing from the spirit of the invention. [Explanation of Symbols]

[0134] 1. Laser irradiation device 10 Main floating unit 11 Conveyor Unit 12 Retention mechanism 14 Laser irradiation area 15 Laser light 15a Irradiation area 17. Movable levitation unit 18 End-level floating unit 31 Precision levitation area 33 Rough surface area 60a First area 60b Second area 60c Third Region 60d The fourth area 60e Process Area 60f passing area 671-676 End-level floating units 68 Rotation Mechanism 69a, 69b Alignment mechanism 100 circuit boards 111 Precision Levitation Unit 113 Rough Floating Unit 131 Floating Unit Cell 220 x moving mechanism 230y moving mechanism 240 Lifting mechanism 300 OLED displays 310 circuit board 311 TFT layer 311a TFT 312 Organic layer 312a Organic EL light-emitting element 312b Bulkhead 313 Color filter layers 313a Color Filter (CF) 314 Sealing substrate 401 Glass Substrate 402 Gate 403 Gate insulating film 404 Amorphous Silicon Film 405 Polysilicon film 671-676 End-level floating units PX pixels

Claims

1. A transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A holding mechanism is located outside the main levitation unit and holds the substrate on the main levitation unit, A first moving mechanism moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam onto the substrate, A second moving mechanism moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam on the substrate, The substrate is equipped with an end levitation unit that ejects gas to the lower surface of the end of the substrate, The holding mechanism moves between the end levitation unit and the main levitation unit. Conveying device.

2. A transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A holding mechanism is provided which is located outside the main levitation unit and holds the edges of the substrate floating on the main levitation unit that are greater than the irradiation position, A first moving mechanism moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam onto the substrate, The device includes a second moving mechanism that moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam onto the substrate, A transport device in which, when viewed from above, the moving speed of the first moving mechanism and the moving speed of the second moving mechanism are adjusted so that the substrate moves in a straight line in a direction inclined from the line-shaped laser beam.

3. The system further comprises a movable levitation unit having an opening formed along a first direction and ejecting gas to the lower surface of the substrate, The second movement mechanism moves the movable levitation unit in the second direction, The conveying device according to claim 1 or 2, wherein the first moving mechanism moves the holding mechanism so that the holding mechanism moves in a first direction within the opening.

4. A transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A levitation unit is positioned outside the main levitation unit, has an opening provided along a first direction, and ejects gas to the lower surface of the substrate, A holding mechanism is arranged in the opening to hold the substrate, The holding mechanism and the first moving mechanism move the levitation unit along the first direction, An end levitation unit that ejects gas to the lower surface of the end of the substrate, A transport device in which the holding mechanism moves between the end levitation unit and the main levitation unit.

5. A transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A levitation unit is positioned outside the main levitation unit, has an opening provided along a first direction, and ejects gas to the lower surface of the substrate, A holding mechanism is provided in the opening and holds the end of the substrate, which is floating on the main levitation unit, beyond the irradiation position, A conveying device comprising the holding mechanism and a first moving mechanism for moving the levitation unit along the first direction.

6. In a top view, the system further includes a second moving mechanism that moves the holding mechanism and the levitation unit along a second direction inclined from the first direction, The transport device according to claim 4 or 5, wherein while the second moving mechanism moves the holding mechanism and the levitation unit in the second direction, the first moving mechanism moves the holding mechanism in the first direction, thereby changing the irradiation position of the laser beam on the substrate.

7. The holding mechanism is further provided with a lifting mechanism for raising and lowering the holding mechanism, The conveying device according to claim 1, 2, 4, or 5, wherein the first moving mechanism moves the lifting mechanism in a first direction.

8. A transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, The aforementioned transport device A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A holding mechanism is located outside the main levitation unit and holds the substrate on the main levitation unit, The transport device includes an end levitation unit that ejects gas to the lower surface of the end of the substrate, (A1) In order to change the irradiation position of the laser beam on the substrate, the first moving mechanism moves the holding mechanism in a first direction, (A2) In order to change the irradiation position of the laser beam on the substrate, the second moving mechanism moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction, The holding mechanism moves between the end levitation unit and the main levitation unit. Transportation method.

9. A transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, The aforementioned transport device A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, The system includes a holding mechanism positioned outside the main levitation unit, which holds the edges of the substrate floating on the main levitation unit beyond the irradiation position, (A1) In order to change the irradiation position of the laser beam on the substrate, the first moving mechanism moves the holding mechanism in a first direction, (A2) In order to change the irradiation position of the laser beam on the substrate, the second moving mechanism moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction, In a top view, the speed of movement by the first movement mechanism and the speed of movement by the second movement mechanism are adjusted so that the substrate moves in a straight line in a direction inclined from the linear laser beam. Transportation method.

10. The transport device further comprises a movable levitation unit having an opening formed along a first direction and ejecting gas to the lower surface of the substrate, The second movement mechanism moves the movable levitation unit in the second direction, The transport method according to claim 8 or 9, wherein the first moving mechanism moves the holding mechanism so that the holding mechanism moves in a first direction within the opening.

11. A transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A movable levitation unit is positioned outside the main levitation unit, has an opening provided along a first direction, and ejects gas to the lower surface of the substrate, The holding mechanism arranged in the opening is a holding mechanism that holds the substrate, The transport device includes an end levitation unit that ejects gas to the lower surface of the end of the substrate, (B1) The first moving mechanism comprises a step of moving the holding mechanism and the movable levitation unit along the first direction, The holding mechanism moves between the end levitation unit and the main levitation unit. Transportation method.

12. A transport device for transporting a substrate in order to irradiate the substrate with a line-shaped laser beam, A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A movable levitation unit is positioned outside the main levitation unit, has an opening provided along a first direction, and ejects gas to the lower surface of the substrate, The system includes a holding mechanism positioned in the opening and holding the end of the substrate, which is floating on the main levitation unit, beyond the irradiation position, (B1) A transport method comprising a first moving mechanism which moves the holding mechanism and the movable levitation unit along the first direction.

13. The transport device further comprises a second moving mechanism that moves the holding mechanism and the movable levitation unit along a second direction inclined from the first direction when viewed from above, The transport method according to claim 11 or 12, wherein while the second moving mechanism moves the holding mechanism and the movable levitation unit in the second direction, the first moving mechanism moves the holding mechanism in the first direction, thereby changing the irradiation position of the laser beam on the substrate.

14. The transport device further comprises a lifting mechanism for raising and lowering the holding mechanism. The transport method according to claim 8, 9, 11, or 12, wherein the first moving mechanism moves the lifting mechanism in a first direction.

15. (sa1) A step of forming an amorphous film on a substrate, (sa2) A step of transferring the substrate on which the amorphous film is formed to a transport device, (sa3) The process includes the step of annealing the amorphous film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, thereby crystallizing the amorphous film and forming a crystalline film, The aforementioned transport device is A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A holding mechanism is located outside the main levitation unit and holds the substrate on the main levitation unit, A first moving mechanism moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam onto the substrate, A second moving mechanism moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam on the substrate, The transport device includes an end levitation unit that ejects gas to the lower surface of the end of the substrate, The holding mechanism moves between the end levitation unit and the main levitation unit. A method for manufacturing a semiconductor device.

16. (sa1) A step of forming an amorphous film on a substrate, (sa2) A step of transferring the substrate on which the amorphous film is formed to a transport device, (sa3) The process includes the step of annealing the amorphous film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, thereby crystallizing the amorphous film and forming a crystalline film, The aforementioned transport device is A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A holding mechanism is provided which is located outside the main levitation unit and holds the edges of the substrate floating on the main levitation unit that are greater than the irradiation position, A first moving mechanism moves the holding mechanism in a first direction in order to change the irradiation position of the laser beam onto the substrate, The device includes a second moving mechanism that moves the holding mechanism and the first moving mechanism in a second direction tilted from the first direction in order to change the irradiation position of the laser beam onto the substrate, In a top view, the moving speed of the first moving mechanism and the moving speed of the second moving mechanism are adjusted so that the substrate moves in a straight line in a direction inclined from the linear laser beam. A method for manufacturing a semiconductor device.

17. The transport device has an opening formed along a first direction and further comprises a movable levitation unit that ejects gas to the lower surface of the substrate, The second movement mechanism moves the movable levitation unit in the second direction, A method for manufacturing a semiconductor device according to claim 15 or 16, wherein the first moving mechanism moves the holding mechanism so that the holding mechanism moves in a first direction within the opening.

18. (sb1) The step of forming an amorphous film on a substrate, (sb2) A step of transferring the substrate on which the amorphous film is formed to a transport device, (sb3) The process includes the step of annealing the amorphous film to form a crystalline film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, The aforementioned transport device is A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A levitation unit is positioned outside the main levitation unit, has an opening provided along a first direction, and ejects gas to the lower surface of the substrate, A holding mechanism is arranged in the opening to hold the substrate, The transport device includes an end levitation unit that sprays gas onto the lower surface of the end of the substrate, The holding mechanism and the levitation unit are further provided with a first moving mechanism that moves them along the first direction. The holding mechanism moves between the end levitation unit and the main levitation unit. A method for manufacturing a semiconductor device.

19. (sb1) The step of forming an amorphous film on a substrate, (sb2) A step of transferring the substrate on which the amorphous film is formed to a transport device, (sb3) The process includes the step of annealing the amorphous film to form a crystalline film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using the transport device, The aforementioned transport device is A main levitation unit having an irradiation area positioned directly below the irradiation position of the laser beam, which levitates the substrate on its upper surface, A levitation unit is positioned outside the main levitation unit, has an opening provided along a first direction, and ejects gas to the lower surface of the substrate, A holding mechanism is provided in the opening and holds the end of the substrate, which is floating on the main levitation unit, beyond the irradiation position, A method for manufacturing a semiconductor device, comprising: a holding mechanism and a first moving mechanism for moving the levitation unit along the first direction.

20. The transport device further comprises a second moving mechanism that moves the holding mechanism and the levitation unit along a second direction inclined from the first direction in a top view, A method for manufacturing a semiconductor device according to claim 18 or 19, wherein while the second moving mechanism moves the holding mechanism and the levitation unit in a second direction, the first moving mechanism moves the holding mechanism in a first direction, thereby changing the irradiation position of the laser light on the substrate.

21. The holding mechanism is further provided with a lifting mechanism for raising and lowering the holding mechanism, The method for manufacturing a semiconductor device according to claim 15, 16, 18, or 19, wherein the first moving mechanism moves the lifting mechanism in a first direction.

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