Substrate processing apparatus and substrate processing method

Abstract

To provide technique enabling suppression of metal contamination of a substrate.SOLUTION: Substrate processing equipment comprises: a chamber 10; an ozone gas pipe 51a; an ozone gas valve 51b; a restoration gas pipe 51c; a restoration gas valve 52c; a discharge pipe 60; and a control portion. The chamber 10 includes an inner space 10s, and switches an open state and a closed state. At least a part of an inner wall of the ozone gas pipe 51a is formed by stainless steel alloy. The restoration gas pipe 51c includes a downstream end connected to the middle of the ozone gas pipe 51a. The control portion opens an ozone gas valve 52a in a state where the chamber 10 is in a close state, and close the ozone gas valve 52a after an ozone gas is supplied to the chamber 10, and supplies a restoration gas to the ozone gas pipe 51a by opening the restoration gas valve 52c in a state where the chamber 10 is in an open state. The restoration gas restores a passive membrane of the inner wall of the ozone gas pipe 51a.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Conventionally, substrate processing apparatuses that process a substrate using ozone gas have been proposed (e.g., Patent Document 1). In Patent Document 1, the substrate processing apparatus includes a heat treatment chamber, an ozone supply line, and an exhaust line. The heat treatment chamber includes a chamber body and a lid. The lid is provided so as to be capable of moving up and down above the chamber body. When the lid is separated from the chamber body, the internal space of the heat treatment chamber communicates with the external space. In the open state where the lid is separated from the chamber body, an unprocessed substrate is carried into the heat treatment chamber, and a processed substrate is carried out of the heat treatment chamber. When the lid is closed, the peripheral edge of the lid and the peripheral edge of the chamber body are in close contact with each other. Thereby, the internal space of the heat treatment chamber is isolated from the outside.

[0003] The ozone gas supply line is a supply pipe for supplying ozone gas to the heat treatment chamber, and the downstream end thereof is connected to the lid. The exhaust line is an exhaust pipe for discharging gas from the heat treatment chamber to the outside, and the upstream end thereof is connected to the chamber body.

[0004] With the substrate carried in and the lid closed, ozone gas is supplied to the internal space of the heat treatment chamber. This ozone gas acts on the main surface of the substrate in the heat treatment chamber, and for example, oxidatively decomposes an organic film on the main surface of the substrate. The ozone gas is discharged to the outside through the exhaust pipe.

Prior Art Literature

Patent Literature

[0005]

Patent Document 1

Summary of the Invention

Problem to be Solved by the Invention

[0006] The material for the supply pipes in the ozone gas supply line can be a metal with a passivation film. For example, stainless steel alloy can be used.

[0007] When the chamber is open, the internal space of the chamber is connected to the external space. Therefore, moisture-containing gases (such as air) in the external space can flow into the supply pipe from the downstream end of the supply pipe. If moisture acts on the inner wall of the supply pipe, it may damage the passivation film. If the passivation film is damaged, ozone gas will act on the damaged portion of the inner wall of the supply pipe during processing of the substrate, increasing the risk of metal leaking into the supply pipe from the damaged portion. If metal flows into the internal space of the chamber through the supply pipe, it may adhere to the substrate. In other words, the risk of metal contamination of the substrate increases.

[0008] Therefore, the purpose of this disclosure is to provide a technology that can suppress metal contamination of substrates. [Means for solving the problem]

[0009] The first embodiment is a substrate processing apparatus comprising: a chamber having an internal space and switching between an open state in which a substrate can be moved in and out of the internal space and a closed state in which the internal space is isolated from the outside; an ozone gas pipe having a downstream end connected to the chamber, through which ozone gas flows toward the chamber, and whose inner wall at least a part of it is made of a stainless steel alloy; an ozone gas valve interposed in the ozone gas pipe; a repair gas pipe having a downstream end connected in the middle of the ozone gas pipe, through which a repair gas containing oxygen that repairs the passivation film on the inner wall of the ozone gas pipe flows toward the ozone gas pipe; a repair gas valve interposed in the repair gas pipe; a discharge pipe having an upstream end connected to the chamber, through which gas from the chamber flows; and a control unit that, when the chamber is in the closed state, opens the ozone gas valve to supply the ozone gas to the chamber and then closes the ozone gas valve, and when the chamber is in the open state, opens the repair gas valve to supply the repair gas to the ozone gas pipe.

[0010] A second embodiment is a substrate processing apparatus according to the first embodiment, further comprising a flow rate adjustment unit interposed in the repair gas pipe and adjusting the flow rate of the repair gas flowing through the repair gas pipe, wherein the control unit discharges the substrate when the repair gas valve is open and the chamber is in the open state, then closes the chamber, and controls the flow rate adjustment unit to make the flow rate of the repair gas in the closed state less than the flow rate of the repair gas in the open state.

[0011] A third embodiment is a substrate processing apparatus according to the first or second embodiment, wherein the control unit removes the substrate while the repair gas valve is open and the chamber is in the open state, then closes the chamber, and closes the repair gas valve in the closed state.

[0012] A fourth embodiment is a substrate processing apparatus according to any one of the first to third embodiments, further comprising an inert gas pipe for supplying an inert gas to the chamber and an inert gas valve interposed in the inert gas pipe, wherein the control unit opens the inert gas valve after supplying the ozone gas to supply the inert gas to the chamber, discharges the ozone gas in the chamber with the inert gas, then closes the inert gas valve, and thereafter opens the chamber to the open state, and at least while the chamber is in the open state, opens the repair gas valve to supply the repair gas to the ozone gas pipe.

[0013] A fifth embodiment is a substrate processing apparatus according to the fourth embodiment, wherein the downstream end of the inert gas pipe is connected to the middle of the ozone gas pipe, and the downstream end of the repair gas pipe is connected to the middle of the ozone gas pipe upstream of the flow of ozone gas from the downstream end of the inert gas pipe.

[0014] A sixth embodiment is a substrate processing apparatus according to any one of the first to third embodiments, wherein the control unit opens the repair gas valve after supplying the ozone gas and supplies the repair gas to the chamber through the ozone gas pipe, and after discharging the ozone gas in the chamber with the repair gas, the chamber is opened.

[0015] The seventh embodiment is a substrate processing apparatus according to any one of the first to sixth embodiments, wherein the inner wall of the ozone gas tube is subjected to ozone passivation treatment.

[0016] The eighth aspect is a substrate processing method comprising: a loading step in which a chamber having an internal space and switching between an open state in which a substrate is loaded into and out of the internal space and a closed state in which the internal space is isolated from the outside is in the open state, the substrate is loaded into the internal space, and the chamber is closed with the substrate loaded inside; a processing step after the loading step in which ozone gas is supplied to the chamber through an ozone gas pipe whose inner wall at least a part of is made of stainless steel alloy, while discharging gas from the internal space of the chamber through a discharge pipe; an unloading step after the processing step in which the chamber is opened and the substrate is unloaded; and a repair gas supply step performed in parallel with at least one of the loading step and the unloading step, and during at least a part of the period in which the chamber is in the open state, a repair gas containing oxygen to repair the passivation film on the inner wall of the ozone gas pipe is supplied to the ozone gas pipe through a repair gas pipe having a downstream end connected in the middle of the ozone gas pipe.

[0017] The ninth aspect is a substrate processing method according to the eighth aspect, wherein the repair gas supply step is performed in parallel with the loading step and the unloading step, respectively.

[0018] A tenth aspect is a substrate processing method according to the eighth or ninth aspect, wherein the repair gas supply step is performed in parallel with the unloading step, and in the unloading step, after the substrate has been unloaded, the chamber is closed, and in the repair gas supply step, the repair gas is supplied when the chamber is open and when the chamber is closed, and the flow rate of the repair gas when the chamber is closed is smaller than the flow rate of the repair gas when the chamber is open.

[0019] The eleventh aspect is a substrate processing method according to the eighth or ninth aspect, wherein the repair gas supply step is performed in parallel with the unloading step, the chamber is closed after the substrate is unloaded in the unloading step, and the supply of the repair gas is terminated after the chamber is closed in the repair gas supply step.

[0020] The twelfth aspect is a substrate processing method according to any one of the eighth to eleventh aspects, comprising a purging step between the processing step and the discharge step, in which an inert gas is supplied to the chamber through an inert gas pipe, and the ozone gas in the chamber is pushed out to the discharge pipe with the inert gas.

[0021] The 13th embodiment is a substrate processing method according to any one of the 8th to 11th embodiments, comprising a purging step between the processing step and the discharge step, in which the repair gas is supplied to the chamber through the ozone gas pipe and the ozone gas in the chamber is pushed out to the discharge pipe by the repair gas. [Effects of the Invention]

[0022] According to the first and eighth aspects, when the chamber is in an open state, moisture-containing gas (e.g., air) from the space outside the chamber may flow into the ozone gas pipe, but the repair gas is supplied to the ozone gas pipe in the open state. Therefore, even if the passivation film on the inner wall of the ozone gas pipe is damaged by moisture, the repair gas can repair the passivation film. Accordingly, damage to the passivation film on the inner wall of the ozone gas pipe can be suppressed.

[0023] According to the second and tenth aspects, the consumption of repair gas can be reduced.

[0024] According to the third and eleventh aspects, the consumption of repair gas can be minimized.

[0025] According to the fourth and twelfth aspects, the outflow of ozone gas from the chamber can be suppressed.

[0026] According to the fifth aspect, the repair gas can be supplied from a position further upstream with respect to the ozone gas pipe, so the passivation film on the inner wall of the ozone gas pipe can be repaired over a wider range.

[0027] According to the sixth and thirteenth aspects, since the repair gas is used as the purge gas, control of the inert gas valve is not required, and the processing load on the control unit can be reduced.

[0028] According to the seventh aspect, a high-quality passivation film is formed on the inner wall of the ozone gas pipe.

[0029] According to the ninth aspect, since the repair gas supply step is performed in parallel with both the carry-in step and the carry-out step, damage to the passivation film on the inner wall of the ozone gas pipe can be more reliably suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] [Figure 1] It is a plan view schematically showing an example of the configuration of a substrate processing apparatus. [Figure 2]This is a block diagram that schematically shows an example of the internal configuration of the control unit. [Figure 3] This diagram schematically shows an example of an ozone treatment unit and its surrounding piping structure. [Figure 4] This flowchart shows an example of how the ozone treatment unit operates. [Figure 5] This diagram schematically shows an example of the ozone treatment unit at each step. [Figure 6] This diagram schematically shows an example of the ozone treatment unit during the unloading of circuit boards. [Figure 7] This figure shows an example of a timing chart for an ozone treatment unit. [Figure 8] This diagram schematically shows an example of an ozone treatment unit and its surrounding piping structure. [Figure 9] This flowchart shows an example of how the ozone treatment unit operates. [Modes for carrying out the invention]

[0031] The embodiments will be described in detail below with reference to the drawings. Note that, for the purpose of ease of understanding, the dimensions and number of parts in the drawings are exaggerated or simplified as needed. Also, parts with similar configurations and functions are denoted by the same reference numerals, and redundant explanations are omitted in the following description.

[0032] Furthermore, in the following explanations, similar components will be denoted by the same symbols, and their names and functions will also be the same. Therefore, detailed explanations of them may be omitted to avoid redundancy.

[0033] Furthermore, even if ordinal numbers such as "first" or "second" are used in the following descriptions, these terms are used for convenience to facilitate understanding of the embodiments and are not limited to the order that may result from these ordinal numbers.

[0034] When expressions indicating relative or absolute positional relationships are used (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, such expressions shall not only strictly represent the positional relationship but also represent a state in which there is a relative displacement in terms of angle or distance within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating equality are used (e.g., "identical," "equal," "homogeneous," etc.), unless otherwise specified, such expressions shall not only strictly represent a state in which there is a quantitatively exact equality but also represent a state in which there is a difference within a tolerance or a range in which equivalent functionality is obtained. When expressions indicating shape are used (e.g., "quadrilateral" or "cylindrical"), unless otherwise specified, such expressions shall not only strictly represent the geometrically exact shape but also represent a shape with features such as concavities or chamfers within a range in which equivalent effects are obtained. When expressions such as "possess," "equip," "include," or "have" a single component are used, such expressions are not exclusive expressions that exclude the existence of other components. When the expression "at least one of A, B, and C" is used, it includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0035] <First Embodiment> <Overall configuration of the substrate processing equipment> Figure 1 is a schematic plan view showing an example of the configuration of the substrate processing apparatus 100. The substrate processing apparatus 100 is a single-wafer processing apparatus that processes substrates W one at a time.

[0036] The substrate W is, for example, a semiconductor wafer, a substrate for liquid crystal displays, an organic electroluminescence (EL) substrate, a flat panel display (FPD) substrate, an optical display substrate, a magnetic disk substrate, an optical disk substrate, a magneto-optical disk substrate, a photomask substrate, or a solar cell substrate. The substrate W has a thin, flat shape. In the following, it is assumed that the substrate W is a semiconductor wafer. The substrate W has, for example, a disc shape. The diameter of the substrate W is, for example, about 300 mm, and the film thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less.

[0037] In the example shown in Figure 1, the substrate processing apparatus 100 includes an indexer block 110, a processing block 120, and a control unit 90. The processing block 120 is primarily responsible for processing the substrate W, while the indexer block 110 is primarily responsible for transporting the substrate W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0038] The indexer block 110 includes a load port 111 and a first transport section 112. A substrate carrier (hereinafter referred to as a carrier) C, which is brought in from the outside, is placed on the load port 111. Multiple substrates W are housed in the carrier C, for example, arranged with spacing between them in the vertical direction. In the example shown in Figure 1, multiple load ports 111 are arranged.

[0039] The first transport unit 112 is a transport robot capable of removing unprocessed substrates W from carriers C placed on each load port 111. The first transport unit 112 may also be called an indexer robot. The first transport unit 112 transports the unprocessed substrates W removed from the carriers C to the processing block 120. The processing block 120 can process the unprocessed substrates W. The first transport unit 112 can also receive processed substrates W from the processing block 120 and transport the processed substrates W to the carriers C on the load ports 111.

[0040] In the example shown in Figure 1, the processing block 120 includes a plurality of processing units 121, a second transport unit 122, and a third transport unit 123. The second transport unit 122 is a shuttle transport unit that transports the substrate W between the first transport unit 112 and the third transport unit 123. The third transport unit 123 is a transport robot that transports the substrate W between the second transport unit 122 and the plurality of processing units 121.

[0041] In the example shown in Figure 1, multiple (e.g., four) processing units 121 are arranged to surround the third transport unit 123 in a plan view. This third transport unit 123 may also be called a center robot. At each position in the plan view, the multiple processing units 121 may be stacked vertically. In other words, multiple (four in the figure) towers TW, each composed of multiple processing units 121 stacked vertically, may be arranged to surround the third transport unit 123.

[0042] In the example shown in Figure 1, the multiple processing units 121 include a wet processing unit 121W and a dry processing unit 121D.

[0043] The wet treatment unit 121W performs various wet treatments on the substrate W. For example, the wet treatment unit 121W performs a chemical treatment by supplying a chemical solution to the main surface of the substrate W, followed by a rinsing treatment by supplying a rinsing solution to the main surface of the substrate W, in that order. As chemical treatments, for example, cleaning treatment and etching treatment can be applied. In addition, the wet treatment unit 121W also performs a drying treatment to dry the substrate after the rinsing treatment.

[0044] In some cases, a pattern may be formed on the main surface of the substrate W immediately before it is fed into the wet processing unit 121W. In this case, the wet processing unit 121W may perform hydrophobic treatment and rinsing treatment in this order between rinsing treatment and drying treatment. Hydrophobic treatment is a process in which a hydrophobic solution, such as a silylation solution, is supplied to the main surface of the substrate W to form a hydrophobic film on the main surface of the substrate W. Rinsing treatment after hydrophobic treatment is a process in which the hydrophobic solution is washed away with a rinsing solution. By forming a hydrophobic film on the substrate W, the surface tension of the rinsing solution can be reduced. Therefore, the collapse of the pattern during the subsequent drying treatment can be suppressed.

[0045] Alternatively, a resist film containing a cured layer may be formed on the main surface of the substrate W immediately before it is fed into the wet processing unit 121W. In this case, the wet processing unit 121W may perform a removal treatment to remove the cured layer of the resist film as a chemical treatment. In this case, for example, a mixture of sulfuric acid and hydrogen peroxide (SPM) can be applied as the chemical.

[0046] Organic films, such as a resist film and a hydrophobic film, are formed on the main surface of the substrate W after processing by the wet processing unit 121W.

[0047] The dry processing unit 121D includes the ozone processing unit 1. The ozone processing unit 1 is a processing unit that supplies ozone gas to the main surface of the substrate W and processes the main surface of the substrate W with ozone gas. For example, when ozone gas acts on the main surface of the substrate W, organic matter on the main surface of the substrate W is oxidatively decomposed. The organic matter is, for example, the organic film mentioned above (e.g., a resist film or a hydrophobic film). Since the ozone processing unit 1 oxidatively decomposes organic matter on the main surface of the substrate W with ozone gas, it can also be said to be a dry oxidation processing unit.

[0048] An example of the configuration of the ozone treatment unit 1 will be described later, but the ozone treatment unit 1 may have a heating function for heating the substrate W. In this case, as shown in Figure 1, the dry treatment unit 121D may include a cooling unit 124 for cooling the substrate W and a local transport unit 125 for transporting the substrate W between the cooling unit 124 and the ozone treatment unit 1. In the example in Figure 1, the third transport unit 123 transports the substrate W to the cooling unit 124, and the local transport unit 125 transports the substrate W between the cooling unit 124 and the ozone treatment unit 1. The cooling unit 124 cools the high-temperature treated substrate W transported from the ozone treatment unit 1.

[0049] The control unit 90 comprehensively controls the substrate processing apparatus 100. More specifically, the control unit 90 controls the first transport unit 112, the second transport unit 122, the third transport unit 123, and the processing unit 121. Figure 2 is a schematic block diagram showing an example of the internal configuration of the control unit 90. The control unit 90 is an electronic circuit and includes, for example, a data processing unit 91 and a storage unit 92. In the specific example in Figure 2, the data processing unit 91 and the storage unit 92 are interconnected via a bus 93. The data processing unit 91 may be, for example, a arithmetic processing unit such as a CPU (Central Processor Unit). The storage unit 92 may include a non-temporary storage unit (e.g., ROM (Read Only Memory) or hard disk) 921 and a temporary storage unit (e.g., RAM (Random Access Memory)) 922. The non-temporary storage unit 921 may store, for example, a program that defines the processing to be executed by the control unit 90. By the data processing unit 91 executing this program, the control unit 90 can execute the processing defined in the program. Of course, some or all of the processing performed by the control unit 90 may be carried out by dedicated hardware such as logic circuits.

[0050] <Overview of the Ozone Treatment Unit> Figure 3 is a schematic diagram showing an example of an ozone treatment unit 1 and its surrounding piping structure. As shown in Figure 3, the ozone treatment unit 1 includes a chamber 10. The chamber 10 forms an internal space 10s. The internal space 10s corresponds to a processing chamber for processing the substrate W. The internal space 10s is the space formed by the inner wall of the chamber 10. Note that Figure 3 schematically shows the shape of the chamber 10.

[0051] Chamber 10 has an opening and closing structure for loading and unloading substrates W. Chamber 10 is in an open state when loading and unloading substrates W, and in a closed state when processing substrates W. The open state is when the internal space 10s is in communication with the external space where the local transport unit 125 is located, and the closed state is when the internal space 10s is isolated from the external space. When Chamber 10 is in an open state, the local transport unit 125 can load and unload substrates W into the internal space 10s of Chamber 10. In other words, when Chamber 10 is in an open state, the local transport unit 125 loads unprocessed substrates W into the internal space 10s or unloads substrates W from the internal space 10s. When Chamber 10 is in a closed state, the ozone processing unit 1 can process the substrates W using ozone gas. Chamber 10 can switch between an open state and a closed state under the control of the control unit 90.

[0052] In the example shown in Figure 3, the chamber 10 includes a lower member 20 and an upper member 30. The lower member 20 and the upper member 30 face each other in the vertical direction. In the example shown in Figure 3, the lower member 20 has a concave shape that is convex downwards, and the upper member 30 has a concave shape that is convex vertically upwards. The upper member 30 is located vertically above the lower member 20, and the side walls of the upper member 30 and the side walls of the lower member 20 face each other in the vertical direction.

[0053] In the example shown in Figure 3, the upper member 30 is provided to be displaceable by an opening / closing drive unit 40. The opening / closing drive unit 40 is controlled by a control unit 90 to raise and lower the upper member 30 between the open position and the closed position, which will be described below. The open position is when the upper member 30 is separated from the lower member 20. In the example shown in Figure 3, the upper member 30 is shown in the open position. When the upper member 30 is in the open position, the chamber 10 is in an open state. On the other hand, the closed position is when the upper member 30 is in close contact with the lower member 20, and the lower member 20 and the upper member 30 seal the internal space 10s. For example, when the upper member 30 is in the closed position, the lower surface of the side wall of the upper member 30 is in close contact with the upper surface of the side wall of the lower member 20, and the chamber 10 is in a closed state. The opening / closing drive unit 40 may include a linear motion mechanism such as an air cylinder or a linear motor. Alternatively, the opening / closing drive unit 40 may include a motor and a power transmission unit (for example, a rack and pinion mechanism or a ball screw mechanism) that converts the rotation of the motor into linear motion.

[0054] The substrate W is held or placed in the chamber 10, for example, in a horizontal position. A horizontal position here means that the thickness direction of the substrate W is aligned with the vertical direction. In the example in Figure 3, a mounting platform 11 for placing the substrate W is provided inside the chamber 10. Although different from the example in Figure 3, the substrate W may also be supported by the bottom of the chamber 10. In this case, the bottom of the chamber 10 functions as a mounting platform for supporting the substrate W.

[0055] The ozone treatment unit 1 may include a heater 12 for heating the substrate W in the chamber 10. In the example shown in Figure 3, the heater 12 is located inside the chamber 10, and in a more specific example, inside the mounting table 11. The heater 12 is, for example, an electrical resistance heater and heats the substrate W through the mounting table 11. The heater 12 is controlled, for example, by a control unit 90. The heater 12 can heat the substrate W to a temperature suitable for the oxidative decomposition of organic matter on the main surface of the substrate W. This temperature is, for example, 100 degrees Celsius or higher.

[0056] The downstream end of the ozone gas tube 51a is connected to the chamber 10. In the example shown in Figure 3, the downstream end of the ozone gas tube 51a is connected to the ceiling of the chamber 10. The upstream end of the ozone gas tube 51a is connected to the ozone generator 70. The ozone generator 70 generates ozone gas. The ozone generation method by the ozone generator 70 is not particularly limited, but at least one of the following can be applied: silent discharge, electrolysis, and ultraviolet lamp. The ozone generator 70 supplies ozone gas to the upstream end of the ozone gas tube 51a.

[0057] A supply valve (hereinafter referred to as the ozone gas valve) 52a is inserted into the ozone gas pipe 51a. The ozone gas valve 52a switches the flow path of the ozone gas pipe 51a open and closed. In the example shown in Figure 3, a flow rate adjustment unit 53a is also inserted into the ozone gas pipe 51a. The flow rate adjustment unit 53a is, for example, a mass flow controller. The flow rate adjustment unit 53a adjusts the flow rate of ozone gas flowing through the ozone gas pipe 51a. The ozone gas valve 52a and the flow rate adjustment unit 53a are controlled by the control unit 90.

[0058] In the example shown in Figure 3, a filter 54a is inserted into the ozone gas pipe 51a. In the example shown in Figure 3, the filter 54a is located downstream of both the ozone gas valve 52a and the flow rate adjustment unit 53a. The filter 54a captures foreign matter (e.g., metal) contained in the ozone gas. This allows cleaner ozone gas to be supplied into the chamber 10.

[0059] The ozone gas pipe 51a is a metal pipe. For example, the ozone gas pipe 51a is made of an alloy, and more specifically, a stainless steel alloy pipe. Stainless steel alloys contain iron as the main component, and various chemical components such as carbon, silicon, manganese, phosphorus, sulfur, nickel, chromium, molybdenum, copper, and nitrogen as minor components. A passivation film (oxide film) is formed on the inner wall of the ozone gas pipe 51a. When the ozone gas pipe 51a is made of a stainless steel alloy, the passivation film may contain, for example, chromium oxide and possibly manganese oxide. The passivation film formed on the inner wall of the ozone gas pipe 51a can protect the metal inside the ozone gas pipe 51a. When a stainless steel alloy is used as the material for the ozone gas pipe 51a, the ozone gas pipe 51a can be realized with high reliability against ozone gas.

[0060] The inner wall of the ozone gas tube 51a may be treated with ozone passivation (registered trademark). Ozone passivation is a process that forms a high-quality passivation film on a target surface by applying a high concentration (e.g., 50% by volume or more) of ozone gas to the target surface, for example, at room temperature (e.g., around 25 degrees Celsius). If ozone passivation is performed, a higher quality passivation film will be formed on the inner wall of the ozone gas tube 51a.

[0061] It is not necessary for the entire ozone gas pipe 51a to be made of metal (stainless steel alloy). For example, the ozone gas pipe 51a may include an inner portion that forms the inner wall and an outer portion made of a material other than metal that surrounds the inner portion from the outside. In this case, it is sufficient that the inner portion is made of metal (e.g., stainless steel alloy). Also, it is not necessary for the entire longitudinal portion of the ozone gas pipe 51a to be made of metal. For example, a portion of the ozone gas pipe 51a in the longitudinal direction may be made of flexible piping. For example, a portion of the ozone gas pipe 51a within a predetermined range in the longitudinal direction from the downstream end may be made of flexible piping. This flexible piping may be made of a fluororesin such as a tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer. If a portion of the longitudinal portion of the ozone gas pipe 51a is made of flexible piping, the stress generated in the ozone gas pipe 51a when the upper member 30 moves can be reduced.

[0062] In the example shown in Figure 3, a supply valve (referred to as an ozone valve) 55a is also inserted in the portion of the ozone gas pipe 51a upstream of the ozone gas valve 52a. The ozone gas valve 55a also switches the flow path of the ozone gas pipe 51a open and closed. The upstream end of piping 56a is connected to the portion of the ozone gas pipe 51a between the ozone gas valves 52a and 55a. The downstream end of piping 56a is connected to a manifold discharge pipe 65. The downstream end of the manifold discharge pipe 65 is connected to an unillustrated discharge section (e.g., factory utilities). A pressure regulating unit 57a is inserted into piping 56a. The pressure regulating unit 57a is, for example, an auto pressure controller. The ozone gas valve 55a and the pressure regulating unit 57a are controlled by, for example, a control unit 90. A portion of the ozone gas in the ozone gas pipe 51a flows through the pipe 56a at a flow rate controlled by the pressure adjustment unit 57a, thereby adjusting the pressure in the ozone gas pipe 51a to within a predetermined range.

[0063] As shown in Figure 3, the upstream end of the discharge pipe 60 is also connected to the chamber 10. In the example in Figure 3, the upstream end of the discharge pipe 60 is connected to the bottom of the chamber 10, and the downstream end of the discharge pipe 60 is connected to a manifold discharge pipe 65. The downstream end of the manifold discharge pipe 65 is connected to an exhaust section (e.g., factory utilities) not shown. A discharge valve 62 is interposed in the discharge pipe 60. The discharge valve 62 is controlled, for example, by a control unit 90, which switches the flow path of the discharge pipe 60 open and closed. In the example in Figure 3, a pressure adjustment unit 63 is interposed in the discharge pipe 60. The pressure adjustment unit 63 adjusts the exhaust flow rate of gas from the chamber 10 so that the pressure in the internal space 10s of the chamber 10 is within a predetermined pressure range. The pressure adjustment unit 63 is controlled, for example, by a control unit 90. The pressure adjustment unit 63 may be, for example, an auto pressure controller. A pressure sensor (not shown) may be provided to measure the pressure in the internal space 10s of the chamber 10. The control unit 90 may control the pressure adjustment unit 63 based on the measurement value of the pressure sensor.

[0064] In the example shown in Figure 3, a filter 54a is inserted into the ozone gas tube 51a. The filter 54a captures impurities contained in the ozone gas. This allows for the supply of cleaner ozone gas to the chamber 10.

[0065] When the substrate W is loaded into the chamber 10 and the chamber 10 is closed, the control unit 90 opens the ozone gas valves 52a and 55a. This supplies ozone gas to the chamber 10 through the ozone gas pipe 51a. The ozone gas acts on the main surface (top surface) of the substrate W inside the chamber 10, oxidizing and decomposing organic matter on the main surface of the substrate W, for example. The control unit 90 also opens the discharge valve 62. This causes the ozone gas to be discharged from the chamber 10 through the discharge pipe 60. Once sufficient organic matter has been removed from the substrate W, the control unit 90 closes the ozone gas valve 52a.

[0066] In the example shown in Figure 3, an inert gas pipe 51b is provided for purging the ozone gas in the chamber 10. In the example shown in Figure 3, the downstream end of the inert gas pipe 51b is connected to a connection point C1 in the middle of the ozone gas pipe 51a. The upstream end of the inert gas pipe 51b is connected to an inert gas supply source. The inert gas supply source has a storage section for storing inert gas and supplies inert gas to the upstream end of the inert gas pipe 51b. The inert gas includes, for example, nitrogen gas and at least one of a noble gas. The noble gas includes, for example, argon gas.

[0067] An inert gas supply valve (hereinafter referred to as the inert gas valve) 52b is inserted into the inert gas pipe 51b. The inert gas valve 52b switches the flow path of the inert gas pipe 51b open and closed. In addition, in the example shown in Figure 3, a flow rate adjustment unit 53b, a filter 54b, and a check valve 55b are inserted into the inert gas pipe 51b. The flow rate adjustment unit 53b adjusts the flow rate of the inert gas flowing through the inert gas pipe 51b. The flow rate adjustment unit 53b is, for example, a valve with an adjustable opening. The inert gas valve 52b and the flow rate adjustment unit 53b are controlled, for example, by the control unit 90. The filter 54b captures foreign matter contained in the inert gas. This allows cleaner inert gas to be supplied to the chamber 10. The check valve 55b allows the inert gas flowing from the inert gas supply source toward the chamber 10 to pass through, and blocks the inert gas flowing from the chamber 10 toward the inert gas supply source.

[0068] The control unit 90 opens the inert gas valve 52b after the substrate W has been treated with ozone gas (i.e., after the ozone gas has been supplied). This allows inert gas from the inert gas supply source to be supplied into the chamber 10 through the inert gas pipe 51b and a portion of the ozone gas pipe 51a. As a result, the ozone gas in the chamber 10 can be pushed out towards the discharge pipe 60 by the inert gas. In other words, the ozone gas in the chamber 10 can be replaced with inert gas. The control unit 90 closes the inert gas valve 52b after the ozone gas has been sufficiently discharged.

[0069] Incidentally, in the example shown in Figure 3, a filter 54a is provided as described above. Ozone gas tends to accumulate in this filter 54a. Therefore, when an inert gas is supplied (i.e., during purging), the ozone gas that has accumulated in the filter 54a may flow out towards the chamber 10. Consequently, the ozone gas may flow into the internal space 10s of the chamber 10, and the time required to purge the ozone gas may be prolonged.

[0070] Therefore, in the example shown in Figure 3, a piping structure is provided for discharging the ozone gas in the filter 54a to the collective discharge pipe 65. Specifically, the upstream end of the discharge pipe 56b is connected to the portion of the ozone gas pipe 51a immediately before the filter 54a. A discharge valve 57b is inserted into the discharge pipe 56b. The discharge valve 57b is controlled, for example, by the control unit 90, which switches the opening and closing of the flow path of the discharge pipe 56b. The downstream end of the discharge pipe 56b is connected to the suction port of the ejector 59b. The inlet of the ejector 59b is connected to a gas supply source (not shown), and the outlet of the ejector 59b is connected to the upstream end of the discharge pipe 58b. The downstream end of the discharge pipe 58b is connected to the collective discharge pipe 65.

[0071] The control unit 90 opens the discharge valve 57b after processing the substrate W with ozone gas. When high-pressure gas (e.g., air) flows from the gas supply source through the ejector 59b to the discharge pipe 58b with the discharge valve 57b open, the pressure inside the discharge pipe 56b becomes negative due to the flow of this gas. As a result, the gas inside the discharge pipe 56b is drawn into the ejector 59b and discharged through the discharge pipe 58b to the collective discharge pipe 65. This gas flow also draws the ozone gas in the filter 54a towards the ejector 59b. This prevents the ozone gas in the filter 54a from flowing towards the chamber 10. Therefore, the time required to purge the ozone gas with an inert gas can be shortened.

[0072] Filter 54a may be omitted. If filter 54a is not provided, the discharge pipe 56b, discharge valve 57b, ejector 59b, and discharge pipe 58b will also not be provided.

[0073] After the ozone gas in the chamber 10 is discharged, the control unit 90 controls the opening / closing drive unit 40 to open the chamber 10. This allows the processed substrate W to be unloaded. At this time, the internal space 10s of the chamber 10 is in communication with the outside, so outside air can flow into the downstream end of the ozone gas tube 51a through the internal space 10s. Since outside air usually contains moisture, this moisture can act on the inner wall of the ozone gas tube 51a. As a result, the passivation film on the inner wall of the ozone gas tube 51a may be damaged. When the passivation film is damaged, when the ozone gas flows through the ozone gas tube 51a, the ozone gas acts on the damaged portion of the inner wall of the ozone gas tube 51a, making it easier for internal metals (e.g., manganese) to leak into the tube. For example, manganese can evaporate due to the ozone gas. If such metals flow into the chamber 10 through the ozone gas tube 51a, metal contamination of the substrate W will occur.

[0074] Therefore, in this embodiment, a repair gas pipe 51c is provided for supplying a repair gas to repair the passivation film on the inner wall of the ozone gas pipe 51a. The downstream end of the repair gas pipe 51c is connected to connection point C2 in the middle of the ozone gas pipe 51a, and the upstream end of the repair gas pipe 51c is connected to a repair gas supply source. The repair gas is an oxidizing gas containing oxygen, for example, oxygen gas. The repair gas may also include, for example, dry air. The repair gas does not contain ozone. Furthermore, the repair gas is anhydrous gas that contains almost no moisture. Here, anhydrous means, for example, that the moisture content (volume ratio) is tens (for example, 10) vol.ppm or less. The repair gas supply source includes a storage section for storing the repair gas and supplies the repair gas to the upstream end of the repair gas pipe 51c.

[0075] A supply valve (hereinafter referred to as the repair gas valve) 52c is inserted into the repair gas pipe 51c. The repair gas valve 52c switches the flow path of the repair gas pipe 51c open and closed. In addition, in the example shown in Figure 3, a flow rate adjustment unit 53c, a filter 54c, and a check valve 55c are inserted into the repair gas pipe 51c. The flow rate adjustment unit 53c adjusts the flow rate of the repair gas flowing through the repair gas pipe 51c. The flow rate adjustment unit 53c is, for example, a valve with an adjustable opening. The repair gas valve 52c and the flow rate adjustment unit 53c are controlled, for example, by the control unit 90. The filter 54b captures foreign matter contained in the repair gas. This allows a cleaner repair gas to be supplied to the ozone gas pipe 51a. The check valve 55b allows the repair gas flowing from the repair gas supply source toward the ozone gas pipe 51a to pass through, and blocks the repair gas flowing from the ozone gas pipe 51a toward the repair gas supply source.

[0076] The downstream end of the repair gas pipe 51c is connected to the ozone gas pipe 51a downstream of the ozone gas valve 52a. In other words, connection position C2 is located downstream of the ozone gas valve 52a. In the example in Figure 3, the filter 54a is located downstream of the ozone gas valve 52a, the flow rate adjustment unit 53a, and the check valve 55c, and the downstream end of the repair gas pipe 51c is connected to the ozone gas pipe 51a downstream of the filter 54a. In other words, in the example in Figure 3, connection position C2 is located downstream of the filter 54a.

[0077] The control unit 90 opens the repair gas valve 52c after treatment with ozone gas. Specifically, the control unit 90 opens the repair gas valve 52c when the chamber 10 is in an open state. When the repair gas valve 52c is open, the repair gas flows into the ozone gas pipe 51a through the repair gas pipe 51c, flows through the downstream portion of the ozone gas pipe 51a, and flows out into the chamber 10. The downstream portion of the ozone gas pipe 51a referred to here is the portion between the downstream end of the ozone gas pipe 51a and the connection position C2. The majority of this downstream portion is made of metal (e.g., stainless steel alloy). The repair gas acts on the passivation film on the inner wall of the downstream portion of the ozone gas pipe 51a and repairs the passivation film.

[0078] <Operation of substrate processing equipment> Next, a specific example of the operation of the ozone treatment unit 1 will be described. Figure 4 is a flowchart showing an example of the operation of the ozone treatment unit 1. The control unit 90 causes the substrate processing device 100 to execute steps S1 to S7 according to a preset processing procedure (recipe). Figure 5 is a schematic diagram showing an example of the state of the ozone treatment unit 1 at each step. Here, the ozone gas valve 55a is open, and ozone gas from the ozone generator 70 is constantly flowing through a part of the ozone gas pipe 51a, piping 56a, and the collective discharge pipe 65. The pressure adjustment unit 57a adjusts the pressure in the relevant part of the ozone gas pipe 51a to within a predetermined range. The discharge valve 62 is also assumed to be open.

[0079] First, the substrate processing apparatus 100 loads the unprocessed substrate W into the ozone processing unit 1 (Step S1: Loading process: see Figure 5(a)). Specifically, the control unit 90 first controls the opening / closing drive unit 40 to raise the upper member 30 to the open position. This opens the chamber 10. With the chamber 10 open, the control unit 90 controls the local transport unit 125 to load the substrate W into the chamber 10. This places the substrate W on the mounting table 11 inside the chamber 10. Next, with the substrate W loaded, the control unit 90 closes the chamber 10. Specifically, the control unit 90 lowers the upper member 30 to the closed position using the opening / closing drive unit 40. This closes the chamber 10 with the substrate W present in its internal space 10s.

[0080] Next, the control unit 90 controls the heater 12 to heat the substrate W (step S2: heating start step). The heater 12 heats the substrate W so that its temperature is within a temperature range suitable for ozone treatment. This temperature is, for example, 100 degrees Celsius or higher. The heater 12 continues the heating operation until at least the ozone treatment is completed. Note that step S2 may be performed before step S1, or it may be performed in parallel with step S1.

[0081] Next, the control unit 90 performs ozone treatment (step S3: treatment process: see Figure 5(b)). Specifically, the control unit 90 opens the ozone gas valve 52a. This supplies ozone gas to the chamber 10 through the ozone gas pipe 51a. The ozone concentration of the ozone gas is, for example, 100-200 g / cm³. 3 It may be as follows. The supply flow rate of ozone gas may be about 5 to 20 L (liters) / minute. The ozone gas supplied into the chamber 10 acts on the main surface of the substrate W and processes the main surface of the substrate W. For example, the ozone gas oxidizes and decomposes organic matter on the main surface of the substrate W. The organic matter gas and products such as water vapor produced by the decomposition of organic matter are discharged to the outside through the discharge pipe 60 along with the ozone gas. When the main surface of the substrate W is sufficiently processed, the control unit 90 closes the ozone gas valve 52a. For example, when a predetermined ozone processing time has elapsed since the ozone gas valve 52a was opened, the control unit 90 closes the ozone gas valve 52a. The elapsed time is measured, for example, by a timer circuit (not shown) of the control unit 90. The ozone processing time is set in advance, for example.

[0082] Next, the control unit 90 performs a purging process (Step S4: Purge process: see Figure 5(c)). As a specific example, the control unit 90 opens the inert gas valve 52b. This supplies inert gas to the chamber 10 through the inert gas pipe 51b. The inert gas supplied into the chamber 10 pushes the ozone gas out to the discharge pipe 60, so that eventually the gas in the chamber 10 is replaced from ozone gas to inert gas. This purging process suppresses the outflow of ozone gas from the chamber 10.

[0083] At this time, the control unit 90 may open the discharge valve 57b. This allows the ozone gas in the filter 54a to be discharged to the manifold discharge pipe 65 through the discharge pipes 56b and 58b. Therefore, the ozone gas in the filter 54a is less likely to flow towards the chamber 10, and the ozone gas in the chamber 10 can be replaced with inert gas in a shorter time. When the ozone gas in the filter 54a has been sufficiently discharged, the control unit 90 closes the discharge valve 57b. Also, when the ozone gas in the chamber 10 has been sufficiently discharged, the control unit 90 closes the inert gas valve 52b. For example, the control unit 90 closes the inert gas valve 52b when a predetermined purging time has elapsed since the inert gas valve 52b was opened. The purging time is, for example, preset. This purging process fills the downstream portion of the ozone gas pipe 51a with inert gas.

[0084] Next, the substrate processing apparatus 100 unloads the processed substrate W from the ozone processing unit 1 (Step S5: Unloading process: see Figure 5(d)). Specifically, first, the control unit 90 controls the opening / closing drive unit 40 to raise the upper member 30 to the open position. This opens the chamber 10. Next, the control unit 90 controls the local transport unit 125 to unload the substrate W from the chamber 10. The local transport unit 125 transports the substrate W to the cooling unit 124.

[0085] The local transport unit 125 then transports the next unprocessed substrate W to the ozone treatment unit 1. In other words, the series of processes described above are executed again on the next substrate W. This allows the ozone treatment unit 1 to sequentially perform ozone treatment on multiple substrates W.

[0086] Now, during the loading and unloading of the substrate W (steps S1 and S5), the chamber 10 is in an open state. As a result, air can flow from the external space of the chamber 10 (i.e., the space where the local transport unit 125 is located) through the internal space 10s to the downstream end of the ozone gas tube 51a. If moisture in this air acts on the passivation film on the inner wall of the ozone gas tube 51a, the passivation film may be damaged.

[0087] Therefore, in the example shown in Figure 4, when the substrate W is removed (step S5), the repair gas is supplied to the ozone gas tube 51a (step S7: repair gas supply process: see Figure 5(d)). In other words, step S7 is performed in parallel with step S5. Specifically, the control unit 90 supplies the repair gas to the ozone gas tube 51a when the chamber 10 is in an open state. Specifically, the control unit 90 opens the repair gas valve 52c. As a result, the repair gas flows into the downstream portion of the ozone gas tube 51a through the repair gas tube 51c, pushing out the inert gas in the downstream portion of the ozone gas tube 51a and flowing out from the downstream end of the ozone gas tube 51a. In other words, the gas in the downstream portion of the ozone gas tube 51a is replaced from inert gas to repair gas. The flow rate of the repair gas is not particularly limited, but it can be set to, for example, about 5 L (liters) / min or more. The oxygen in the repair gas acts on the passivation film on the inner wall of the downstream portion of the ozone gas tube 51a, thereby repairing the passivation film. In other words, the oxides on the passivation film grow due to the oxygen. Furthermore, since the repair gas flows out from the downstream end of the ozone gas tube 51a, it is also possible to suppress the inflow of moisture-containing air into the downstream end of the ozone gas tube 51a.

[0088] Furthermore, in step S7, the control unit 90 only needs to open the repair gas valve 52c for at least a portion of the period during which the chamber 10 is open. This is because during the period when the repair gas is supplied, the passivation film on the inner wall of the ozone gas pipe 51a can be repaired, and the inflow of air to the downstream end of the ozone gas pipe 51a can be suppressed.

[0089] In step S7, the control unit 90 may open the repair gas valve 52c before instructing the opening / closing drive unit 40 to start the operation from the closed state to the open state. In other words, the control unit 90 may output an open signal to the repair gas valve 52c and then output a control signal to the opening / closing drive unit 40. The repair gas valve 52c starts opening in response to the open signal. The opening / closing drive unit 40 starts raising the upper member 30 to the open position in response to the control signal. As a result, with gas flowing out from the downstream end of the ozone gas pipe 51a, the opening / closing drive unit 40 opens the chamber 10 from the closed state. Therefore, the inflow of air to the downstream end of the ozone gas pipe 51a can be suppressed more reliably.

[0090] Furthermore, in step S7, the control unit 90 may keep the repair gas valve 52c open for the entire period during which the chamber 10 is open. This allows for more reliable repair of the passivation film on the inner wall of the ozone gas pipe 51a and more reliable suppression of air inflow to the downstream end of the ozone gas pipe 51a.

[0091] In the example shown in Figure 4, the repair gas is supplied to the ozone gas pipe 51a even when the substrate W is being brought in (step S1) (step S6: repair gas supply process: see Figure 5(a)). In other words, step S6 is executed in parallel with step S1. Specifically, the control unit 90 opens the repair gas valve 52c. As a result, the repair gas flows through the repair gas pipe 51c to the downstream portion of the ozone gas pipe 51a, flows through the downstream portion of the ozone gas pipe 51a, and flows out from the downstream end of the ozone gas pipe 51a. The timing of when the repair gas valve 52c opens and the duration for which the repair gas valve 52c is open in step S6 are the same as in step S7. The control unit 90 may also close the repair gas valve 52c when opening the ozone gas valve 52a.

[0092] <Effects and Effects> As described above, in this embodiment, the downstream end of the repair gas pipe 51c is connected to connection point C2 in the middle of the ozone gas pipe 51a. Therefore, by opening the repair gas valve 52c inserted in the repair gas pipe 51c, repair gas can be supplied to the downstream portion of the ozone gas pipe 51a. Thus, the passivation film on the inner wall of the downstream portion of the ozone gas pipe 51a can be repaired.

[0093] In the example described above, the control unit 90 opens the repair gas pipe 51c when the chamber 10 is open. In other words, the repair gas flows out from the downstream end of the ozone gas pipe 51a when outside air from the chamber 10 can flow into the downstream end of the ozone gas pipe 51a. Therefore, it is possible to suppress the inflow of air into the downstream end of the ozone gas pipe 51a. Thus, it is possible to suppress the action of moisture in the air on the inner wall of the ozone gas pipe 51a. Furthermore, even if a small amount of air flows in and damages the passivation film on the inner wall of the ozone gas pipe 51a, the repair gas can repair the passivation film.

[0094] In the example shown in Figure 4, the repair gas is supplied to the ozone gas tube 51a both when the substrate W is loaded (step S1) and when it is unloaded (step S5). This allows for more reliable repair of the passivation film on the inner wall of the ozone gas tube 51a. However, this is not the only option. It is sufficient if the repair gas is supplied to the ozone gas tube 51a for at least a portion of the time when the chamber 10 is open, either during the loading or unloading of the substrate W.

[0095] <Connection location C2> In the example shown in Figure 3, the connection point C2 where the ozone gas pipe 51a and the repair gas pipe 51c are connected is located upstream of the ozone gas flow compared to the connection point C1 where the ozone gas pipe 51a and the inert gas pipe 51b are connected. This allows the repair gas pipe 51c to supply repair gas to a wider area of ​​the ozone gas pipe 51a. In other words, the downstream portion of the ozone gas pipe 51a through which the repair gas flows can be made longer. Therefore, the passivation film on the inner wall of the ozone gas pipe 51a can be repaired over a wider area.

[0096] If filter 54a is not provided, connection position C2 may be located between the flow rate adjustment unit 53a and the ozone gas valve 52a.

[0097] <Period during which circuit board W has not been delivered> There are cases where the chamber 10 is closed even when no substrate W is present in the internal space 10s of the chamber 10. For example, when multiple substrates W in the carrier C are transported sequentially and the ozone treatment unit 1 processes the multiple substrates W sequentially, once a processed substrate W is discharged from the ozone treatment unit 1, no substrate W will be present in the internal space 10s of the chamber 10 until the next unprocessed substrate W is delivered. For this reason, the opening / closing drive unit 40 may close the chamber 10 during the period while waiting for the next substrate W to be delivered.

[0098] Figure 6 is a schematic diagram showing an example of the state of the ozone treatment unit 1 when the substrate W is unloaded (step S5). As shown in Figure 6(a), with the chamber 10 in the open state, the treated substrate W is unloaded from the ozone treatment unit 1 by the local transport unit 125. In Figure 6(a), the repair gas flows out from the downstream end of the ozone gas pipe 51a.

[0099] When a substrate W is unloaded, as shown in Figure 6(b), the control unit 90 controls the opening / closing drive unit 40 to close the chamber 10 from the open state. As a result, the internal space 10s of the chamber 10 is isolated from the external space (the space where the local transport unit 125 is located). In other words, the chamber 10 remains closed until the next substrate W is loaded. At this time, there is no substrate W in the internal space 10s of the chamber 10.

[0100] The control unit 90 may reduce the flow rate of the repair gas when there is no substrate W in the internal space 10s of the chamber 10 and the chamber 10 is closed. Figure 7 is a diagram showing an example of the timing chart of the ozone treatment unit 1. Figure 7 shows an example of the timing chart in step S5. In Figure 7, the flow rate of the repair gas increases just before time t1. That is, the control unit 90 opens the repair gas valve 52c just before time t1. Then, at time t1, the opening / closing drive unit 40 starts to raise the upper member 30 from the closed position, and at time t2, the upper member 30 reaches the open position. After that, at time t3, the local transport unit 125 starts to unload the substrate W, and at time t4, the unloading of the substrate W is completed. As a result, there is no longer any substrate W in the internal space 10s of the chamber 10. After that, at time t5, the opening / closing drive unit 40 starts to lower the upper member 30 from the open position to the closed position, and at time t6, the upper member 30 reaches the closed position. As described above, the control unit 90 causes the local transport unit 125 to transport the substrate W while the repair gas valve 52c is open and the chamber 10 is in the open state, and then causes the opening / closing drive unit 40 to close the chamber 10. As a result, the internal space 10s of the chamber 10 is isolated from the outside without containing the substrate W.

[0101] When chamber 10 is closed, very little air from outside chamber 10 can flow into the internal space 10s of chamber 10, nor can it flow very much into the downstream end of the ozone gas pipe 51a. Immediately after chamber 10 is closed, air is present in the internal space 10s of chamber 10, but this air is eventually pushed out into the discharge pipe 60 by the repair gas. In other words, the gas inside chamber 10 is substantially filled with the repair gas.

[0102] Therefore, as shown in Figure 7, the control unit 90 may control the flow rate adjustment unit 53c to reduce the flow rate of the repair gas from the first flow rate F1 to the second flow rate F2 when the chamber 10 is closed. In other words, the control unit 90 controls the flow rate adjustment unit 53c to make the second flow rate F2 (e.g., steady value) of the repair gas in the closed state lower than the first flow rate F1 (e.g., steady value) of the repair gas in the open state. The second flow rate F2 is, for example, about 1 L / min or more. When the chamber 10 is closed, the amount of moisture-containing air present in the internal space 10s of the chamber 10 does not increase, so even if the flow rate of the repair gas is reduced, the inflow of air into the ozone gas tube 51a can be appropriately suppressed. In other words, the inflow of air into the ozone gas tube 51a can be appropriately suppressed with less repair gas. Furthermore, even if the flow rate of the repair gas is low, the downstream portion of the ozone gas tube 51a is filled with repair gas, so the passivation film on the inner wall of the downstream portion of the ozone gas tube 51a can be appropriately repaired.

[0103] In the example shown in Figure 7, the control unit 90 reduces the flow rate of the repair gas after the chamber 10 is closed (t6). This allows the air remaining in the internal space 10s of the chamber 10 to be purged more quickly.

[0104] Furthermore, the control unit 90 may close the repair gas valve 52c to reduce the flow rate of the repair gas to zero after time t6 when the chamber 10 is closed. For example, the control unit 90 may close the repair gas valve 52c at time t7, after a predetermined time has elapsed from time t6. The control unit 90 may also close the discharge valve 62. In this case, the repair gas in the downstream portion of the ozone gas pipe 51a will be almost at rest. Since this repair gas can also act on the inner wall of the downstream portion of the ozone gas pipe 51a, it can repair the passive film inside the ozone gas pipe 51a.

[0105] It is not always necessary to close the chamber 10 each time a substrate W is unloaded. For example, if multiple substrates W in the carrier C are processed sequentially in the ozone treatment unit 1, the chamber 10 does not need to be closed when replacing substrates W. In this case, when the chamber 10 is open, the flow rate adjustment unit 53c adjusts the flow rate of the repair gas to the first flow rate F1. On the other hand, the chamber 10 may be closed during the period from when the last substrate W in the carrier C is unloaded from the ozone treatment unit 1 until when the first substrate W in the carrier C is loaded into the ozone treatment unit 1. When the chamber 10 is closed, the control unit 90 may reduce the flow rate of the repair gas from the first flow rate F1 to the second flow rate F2, or it may close the repair gas valve 52c.

[0106] <Second Embodiment> Figure 8 is a schematic diagram showing an example of the ozone treatment unit 1 and the surrounding piping structure. In the second embodiment, compared to the first embodiment, there is no piping structure for supplying inert gas.

[0107] Next, a specific example of the operation of the ozone treatment unit 1 will be described. Figure 9 is a flowchart showing an example of the operation of the ozone treatment unit 1. The control unit 90 causes the substrate processing apparatus 100 to execute steps S1 to S3, step S4A, and steps S5 to S7 according to a preset processing procedure (recipe). As shown in Figure 9, in the second embodiment, step S4A is executed instead of step S4 in the first embodiment.

[0108] In step S4A, the control unit 90 opens the repair gas valve 52c. This supplies repair gas to the internal space 10s of the chamber 10 through the repair gas pipe 51c and the downstream portion of the ozone gas pipe 51a. The repair gas pushes the ozone gas in the internal space 10s of the chamber 10 out to the discharge pipe 60, so that the gas in the chamber 10 is replaced from ozone gas to repair gas. Once the ozone gas has been sufficiently discharged, the substrate W is removed (step S5) while the supply of repair gas continues (step S7).

[0109] As described above, according to the second embodiment, a repair gas is used to purge the ozone gas from the internal space 10s of the chamber 10. Therefore, a piping structure for supplying inert gas is unnecessary. By not providing such a piping structure, the cost and size of the substrate processing apparatus 100 can be reduced. In addition, since the control unit 90 does not need to control the opening and closing of the inert gas valve 52b, the processing load on the control unit 90 can also be reduced.

[0110] As described above, the substrate processing apparatus 100 and the substrate processing method have been described in detail, but the above description is illustrative in all respects, and this disclosure is not limited thereto. Furthermore, the various modifications described above can be applied in combination as long as they do not contradict each other. And it is understood that a number of modifications not illustrated can be conceivable without falling outside the scope of this disclosure.

[0111] In the example described above, the opening / closing drive unit 40 raises and lowers the upper member 30, but it may also raise and lower the lower member 20. Furthermore, the chamber 10 does not necessarily have to include the lower member 20 and the upper member 30. For example, a shutter (not shown) for opening and closing the loading / unloading entrance and an opening / closing drive unit (not shown) for opening and closing the shutter may be provided on the side wall of the chamber 10. When the shutter opens, the chamber 10 becomes open, and the substrate W is loaded and unloaded through the loading / unloading entrance. When the shutter closes, the chamber 10 becomes closed.

[0112] In the above example, stainless steel alloys were described in detail, but nickel alloys or the like may be used depending on the application in line with the essence of the present invention. [Explanation of Symbols]

[0113] 10 Chambers 10s internal space 100 Substrate Processing Equipment 51a Ozone gas tube 52a Ozone gas valve 51b Inert gas pipe 52b Inert gas valve 51c Repair gas pipe 52c Repair gas valve 53c Flow rate adjustment section 60 Discharge pipe 90 Control Unit S1 Loading Process (Steps) S3 Processing step S4, S4A Purge process (step) S5 Unloading process (step) S6, S7 Repair gas supply process (step)

Claims

1. A chamber having an internal space, which switches between an open state in which a substrate can be moved in and out of the internal space and a closed state in which the internal space is isolated from the outside, An ozone gas tube having a downstream end connected to the chamber, through which ozone gas flows toward the chamber, and whose inner wall at least a portion of it is made of stainless steel alloy, An ozone gas valve inserted into the ozone gas pipe, A repair gas pipe having a downstream end connected to the ozone gas pipe, through which a repair gas containing oxygen that repairs the passivation film on the inner wall of the ozone gas pipe flows toward the ozone gas pipe, A repair gas valve inserted into the aforementioned repair gas pipe, A discharge pipe having an upstream end connected to the chamber through which gas from the chamber flows, A control unit which, when the chamber is in the closed state, opens the ozone gas valve to supply the ozone gas to the chamber and then closes the ozone gas valve, and when the chamber is in the open state, opens the repair gas valve to supply the repair gas to the ozone gas pipe, A substrate processing apparatus comprising:

2. A substrate processing apparatus according to claim 1, The system further includes a flow rate adjustment unit, which is inserted into the repair gas pipe and adjusts the flow rate of the repair gas flowing through the repair gas pipe, The control unit, With the repair gas valve open and the chamber in the open state, the substrate is removed, and then the chamber is closed. A substrate processing apparatus that controls the flow rate adjustment unit to make the flow rate of the repair gas in the closed state less than the flow rate of the repair gas in the open state.

3. A substrate processing apparatus according to claim 1 or claim 2, The control unit is a substrate processing apparatus that removes the substrate when the repair gas valve is open and the chamber is in the open state, then closes the chamber, and closes the repair gas valve in the closed state.

4. A substrate processing apparatus according to claim 1 or claim 2, An inert gas pipe for supplying inert gas to the chamber, An inert gas valve inserted into the aforementioned inert gas pipe and Furthermore, The control unit opens the inert gas valve after supplying the ozone gas and supplies the inert gas to the chamber, discharges the ozone gas from the chamber with the inert gas, then closes the inert gas valve, and then opens the chamber to the open state, and at least while the chamber is in the open state, opens the repair gas valve and supplies the repair gas to the ozone gas pipe, the substrate processing apparatus.

5. A substrate processing apparatus according to claim 4, The downstream end of the inert gas pipe is connected to the middle of the ozone gas pipe. A substrate processing apparatus wherein the downstream end of the repair gas pipe is connected to the middle of the ozone gas pipe, upstream of the flow of ozone gas, from the downstream end of the inert gas pipe.

6. A substrate processing apparatus according to claim 1 or claim 2, The control unit opens the repair gas valve after supplying the ozone gas and supplies the repair gas to the chamber through the ozone gas pipe, and after the ozone gas in the chamber is discharged with the repair gas, the chamber is returned to the open state.

7. A substrate processing apparatus according to claim 1 or claim 2, A substrate processing apparatus in which the inner wall of the ozone gas tube is subjected to ozone passivation treatment.

8. A chamber having an internal space, which switches between an open state in which a substrate is moved in and out of the internal space and a closed state that isolates the internal space from the outside, is in the open state, and a loading step is made to load the substrate into the internal space and then return the chamber to the closed state with the substrate loaded inside. Following the aforementioned loading process, a processing step is performed in which ozone gas is supplied to the chamber through an ozone gas pipe whose inner wall is formed of at least a portion of stainless steel alloy, while the gas is discharged from the internal space of the chamber through a discharge pipe. After the processing step, the chamber is opened and the substrate is unloaded in an unloading step, A repair gas supply step is performed in parallel with at least one of the loading step and the unloading step, and during at least a portion of the period in which the chamber is in the open state, a repair gas containing oxygen to repair the passivation film on the inner wall of the ozone gas pipe is supplied to the ozone gas pipe through a repair gas pipe having a downstream end connected in the middle of the ozone gas pipe. A substrate processing method comprising:

9. A substrate processing method according to claim 8, A substrate processing method wherein the repair gas supply step is performed in parallel with the loading step and the unloading step, respectively.

10. A substrate processing method according to claim 8 or claim 9, The repair gas supply process is performed in parallel with the removal process. In the aforementioned unloading process, after unloading the substrate, the chamber is closed. In the repair gas supply step, the repair gas is supplied when the chamber is in the open state and when the chamber is in the closed state. A substrate processing method wherein the flow rate of the repair gas when the chamber is in the closed state is smaller than the flow rate of the repair gas when the chamber is in the open state.

11. A substrate processing method according to claim 8 or claim 9, The repair gas supply process is performed in parallel with the removal process. In the aforementioned unloading process, after unloading the substrate, the chamber is closed. A substrate processing method comprising the repair gas supply step, wherein the supply of the repair gas is terminated after the chamber reaches the closed state.

12. A substrate processing method according to claim 8 or claim 9, A substrate processing method comprising a purging step between the processing step and the discharge step, in which an inert gas is supplied to the chamber through an inert gas pipe, and the ozone gas in the chamber is pushed out to the discharge pipe with the inert gas.

13. A substrate processing method according to claim 8 or claim 9, A substrate processing method comprising a purging step between the processing step and the discharge step, in which the repair gas is supplied to the chamber through the ozone gas pipe and the ozone gas in the chamber is pushed out to the discharge pipe by the repair gas.

Images