Substrate support section and substrate processing apparatus

Abstract

To provide a substrate support unit and a substrate processing device with which it is possible to prevent the stranded wire of a power feeding terminal from breaking.SOLUTION: The substrate support unit includes: a base in which an open hole penetrating from the top face to the underside is formed, and in which a counterbore part that communicates with the open hole is formed on the underside; a static chuck that is located to the top of the base, and comes with a substrate support face and a ring support face; an electrode that is located in the static chuck; a first terminal that is located in the open hole and electrically connected to the electrode; a second terminal that is located in the open hole and in the counterbore part; a stranded wire that fits into a recess provided to the first terminal and a recess provided to the second terminal, respectively, and that electrically connects the first and second terminals together; and a connector that is located in the counterbore part and supports the second terminal movably while maintaining contact with the second terminal.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a substrate support portion and a substrate processing apparatus.

Background Art

[0002] Conventionally, in a plasma processing apparatus, an electrostatic chuck that performs electrostatic adsorption for holding a substrate has been used. An electrode for electrostatic adsorption is provided inside the electrostatic chuck, and a voltage is applied to the electrode from a DC power supply, whereby the substrate on the electrostatic chuck is adsorbed. Further, a heater electrode or the like may be provided inside the electrostatic chuck in some cases. A power supply terminal for supplying electric power, which is provided inside a base that supports the electrostatic chuck, is connected to these electrodes. For example, in order to supply power to a temperature adjustment heater electrode, a power supply terminal of a cylindrical member having a lead wire inside is connected thereto (Patent Document 1). Further, for example, in order to supply power to a heater electrode, a bendable flexible twisted wire and a portion that supports the twisted wire are provided in a through hole, and a heater power supply is connected to the portion that supports the twisted wire (Patent Document 2).

Prior Art Literature

Patent Literature

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problem to be Solved by the Invention

[0004] The present disclosure provides a substrate support portion and a substrate processing apparatus capable of suppressing disconnection of a twisted wire of a power supply terminal.

Means for Solving the Problem

[0005] A substrate support according to one aspect of the present disclosure includes a base having a through hole extending from the top surface to the bottom surface and a counterbore formed on the bottom surface communicating with the through hole; an electrostatic chuck disposed on the upper part of the base and having a substrate support surface and a ring support surface; an electrode disposed within the electrostatic chuck; a first terminal disposed within the through hole and electrically connected to the electrode; a second terminal disposed within the through hole and the counterbore; stranded wires that fit into recesses provided in the first terminal and the second terminal, respectively, and electrically connect the first terminal and the second terminal; and a connector disposed within the counterbore that movably supports the second terminal while maintaining contact with it. [Effects of the Invention]

[0006] According to this disclosure, it is possible to suppress the breakage of stranded wires in the power supply terminal. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 shows an example of a plasma processing apparatus in one embodiment of the present disclosure. [Figure 2] Figure 2 shows an example of a cross-section of the power supply terminal in this embodiment. [Figure 3] Figure 3 shows an example of a cross-section of a power supply terminal in a reference example. [Figure 4] Figure 4 shows an example of the RF path near the power supply terminal in this embodiment. [Figure 5] Figure 5 shows an example of the RF path near the power supply terminal in a reference example. [Modes for carrying out the invention]

[0008] The embodiments of the substrate support and substrate processing apparatus disclosed below will be described in detail with reference to the drawings. However, the disclosed technology is not limited to the embodiments described below.

[0009] In electrostatic chucks and bases, expansion and contraction occur due to temperature changes caused by heat input to the electrostatic chuck. At this time, for example, a temperature difference occurs between the upper and lower parts of the base that supports the electrostatic chuck, resulting in different amounts of expansion and contraction. Therefore, if a power supply terminal containing stranded wires is fixed in a through-hole provided in the base, for example, a load is placed on the stranded wires, which may cause them to break. Thus, it is expected that reducing the load on the stranded wires of the power supply terminals caused by expansion and contraction due to the thermal load of the electrostatic chuck will suppress the breakage of the stranded wires in the power supply terminals.

[0010] [Configuration of the plasma processing system] The following describes an example of the configuration of a plasma processing system. Figure 1 is a diagram showing an example of a plasma processing apparatus in one embodiment of the present disclosure. As shown in Figure 1, the plasma processing system includes a capacitively coupled plasma processing apparatus 1 and a control unit 2. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is located inside the plasma processing chamber 10. The shower head 13 is located above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s, and at least one gas outlet for discharging gas from the plasma processing space 10s. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support portion 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0011] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a plan view. The substrate W is placed on the central region 111a of the main body portion 111, and the ring assembly 112 is placed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region 111b is also called the ring support surface for supporting the ring assembly 112.

[0012] In one embodiment, the main body 111 includes a base 1110, an electrostatic chuck 1111, and an adhesive layer 1112. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is placed on the base 1110 via the adhesive layer 1112. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b and a bias electrode 33 placed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have an annular region 111b. In this case, the ring assembly 112 may be placed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member.

[0013] The bias electrode 33 is an example of at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32, which will be described later. In this case, at least one RF / DC electrode (bias electrode 33) functions as a lower electrode. Note that the conductive member of the base 1110 and at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode. The bias electrode 33 is connected to the second RF generation unit 31b, which will be described later, via a transmission line consisting of a conductor in the ceramic member 1111a and a power supply terminal 81 in the through hole 80 of the base 1110.

[0014] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one covering ring. The edge rings are formed of a conductive or insulating material, and the covering rings are formed of an insulating material.

[0015] The substrate support section 11 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are arranged within the ceramic member 1111a of the electrostatic chuck 1111. The substrate support section 11 may also include a heat transfer gas supply section configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0016] The shower head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c. The shower head 13 also includes at least one upper electrode. Note that, in addition to the shower head 13, the gas introduction unit may include one or more side gas injectors (SGI) attached to one or more openings formed in the side wall 10a.

[0017] The gas supply unit 20 may include at least one gas source 21 and at least one flow rate controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the respectively corresponding gas source 21 to the shower head 13 via the respectively corresponding flow rate controller 22. Each flow rate controller 22 may include, for example, a mass flow controller or a pressure-controlled flow rate controller. Furthermore, the gas supply unit 20 may include one or more flow rate modulation devices that modulate or pulse the flow rate of at least one process gas.

[0018] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode (bias electrode 33) and / or at least one upper electrode. This causes plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to at least one lower electrode (bias electrode 33), a bias potential is generated on the substrate W, and ionic components in the formed plasma can be drawn into the substrate W.

[0019] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may be configured to generate a plurality of source RF signals having different frequencies. One or more generated source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0020] The second RF generator 31b is coupled to at least one lower electrode (bias electrode 33) via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode (bias electrode 33). Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0021] Further, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0022] In various embodiments, at least one of the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. The sequence of voltage pulses may also include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0023] The exhaust system 40 may be connected to, for example, a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0024] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described herein. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or it may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read from the storage unit 2a2 and executed by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or it may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The memory unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0025] [Details of the power supply terminal] Next, the details of the power supply terminal 81 in the through hole 80 of the base 1110 will be described using Figure 2. Figure 2 is a diagram showing an example of a cross-section of the power supply terminal in this embodiment. In the following description, a bias electrode 33 will be used as an example of an electrode, and the electrostatic electrode 1111b will be omitted from the description. Also, in Figure 2, the base 1110 is assumed to be a conductive material. As shown in Figure 2, the through hole 80 of the base 1110 has a through hole 80a and a counterbore portion 80b that communicates with the through hole 80a. A power supply terminal 81 and a connector 82 are provided inside the through hole 80. In this embodiment, the connector 82 is made of a conductive material and is electrically connected to the base 1110. The power supply terminal 81 has a first terminal 81a, a second terminal 81b, and a stranded wire 81c. In this embodiment, the through-holes 80 and power supply terminals 81 are arranged evenly at a plurality of locations (six in total) on the circumference within the base 1110. Alternatively, the through-holes 80 and power supply terminals 81 may be arranged at only one location within the base 1110. Furthermore, the through-holes 80 and power supply terminals 81 may be evenly arranged on multiple circumferences within the base 1110. Additionally, an insulating film may be formed on the inner surface of the through-holes 80 by anodizing or the like.

[0026] The first terminal 81a is joined at its upper end to the terminal 33a of the bias electrode 33 inside the electrostatic chuck 1111 using silver solder or the like. The adhesive layer 1112 is removed from the portion corresponding to terminal 33a. The second terminal 81b is positioned from the lower part of the through hole 80a to the counterbore portion 80b. The second terminal 81b is inserted into and supported by a through hole 86 located in the center of the connector 82. The stranded wire 81c fits into the recess 81d provided in the first terminal 81a and the recess 81e provided in the second terminal 81b, respectively, connecting the first terminal 81a and the second terminal 81b. The stranded wire 81c has strength that prevents buckling even when compressed with a force of, for example, about 10N.

[0027] The connector 82 is positioned within the counterbore 80b and fixed to the base 1110 by screws 83 provided on the lower part of the base 1110. The connector 82 also has an annular recess 82a on the inner circumferential surface of the through hole 86. A spring-like member 84 is positioned in the recess 82a to maintain contact between the connector 82 and the lower end 81f of the second terminal 81b. The connector 82 is also provided with ventilation holes 85 that connect the outside of the base 1110 to the through hole 80a. For example, four ventilation holes 85 are provided circumferentially at 90-degree intervals and also serve as holes into which a jig is inserted when screwing the connector 82 into the counterbore 80b. The spring-like member 84 is a conductive member, and even when the lower end portion 81f of the second terminal 81b inserted into the through hole 86 moves horizontally and vertically, it maintains contact with the lower end portion 81f, thereby maintaining electrical conductivity between the second terminal 81b and the connector 82. In other words, the connector 82 supports the second terminal 81b so that it can move via the spring-like member 84. Although not shown in Figure 2, there is a gap between the wall surface of the through hole 86 and the lower end portion 81f of the second terminal 81b, allowing the second terminal 81b to move. As a result, even if the electrostatic chuck 1111 moves horizontally 60 and vertically 61 due to expansion and contraction caused by temperature changes, and the power supply terminal 81 joined to terminal 33a moves similarly, it is possible to maintain electrical conductivity between the power supply terminal 81 and the connector 82 while reducing the load on the stranded wire 81c.

[0028] Furthermore, the second RF generation unit 31b is electrically connected to the base 1110. Connector 82 and the base 1110 are electrically connected, and the power supply terminal 81 and connector 82 are electrically connected. Therefore, a bias RF signal can be supplied to the power supply terminal 81 from the second RF generation unit 31b via the base 1110 and connector 82. Consequently, power is supplied to the connector 82 from the base 1110 without the need to connect a cable, eliminating the need for cable wiring on the bottom surface of the base 1110 at the location of the through-hole 80. This makes it possible to save space at the bottom of the base 1110. The through-hole 80 is positioned to avoid the flow path 1110a of the base 1110.

[0029] Next, let's discuss the material of the power supply terminal 81. When supplying an RF signal to the power supply terminal 81, the RF signal flows near the surface due to the skin effect. Therefore, when plating the power supply terminal 81, if a magnetic material such as nickel is used, high-frequency waves propagate through the plating, generating significant heat. For example, comparing copper and nickel, the relative permeability of copper is "1," while that of nickel is "600." Also, the skin thickness at 400 kHz is "103.6 μm" for copper, while that of nickel is "8.5 μm." Furthermore, the skin thickness at 13 MHz is "18.2 μm" for copper, while that of nickel is "1.5 μm." Therefore, if the plating thickness is 5 μm, the skin thickness of nickel will be thinner than the plating thickness at high frequencies above 13 MHz. Consequently, since high frequencies propagate through the skin thickness region, if nickel plating is applied to the copper base material, very little high frequency will flow through the copper base material. Furthermore, the conductivity of copper is 59.0[10 -6 While the ratio is "S / m", nickel is "14.5[10 -6 The conductivity is [S / m]. Therefore, if nickel, which has relatively low conductivity, is used for plating, high-frequency waves propagate through the plating, causing heat generation due to Joule heating and leading to a temperature rise.

[0030] Therefore, the power supply terminal 81 is formed from solid copper, for example, and areas requiring plating are plated with a non-magnetic material, such as silver plating. Because non-magnetic plating such as silver plating has high conductivity, it can suppress temperature rise due to Joule heating. In the power supply terminal 81 of this embodiment, the first terminal 81a, the second terminal 81b, and the stranded wire 81c are formed from solid copper. The first terminal 81a is silver-plated at the joint with terminal 33a. The connector 82 is formed from solid copper, for example, and is silver-plated. Furthermore, the spring-like member 84 of the connector 82 is formed from an alloy with copper as the base material, such as beryllium copper alloy, and is silver-plated. Note that the spring-like member 84 does not necessarily need to be silver-plated, and its surface may remain in the base material state. Also, the base material of the power supply terminal 81 and the connector 82 may be aluminum or brass, and the non-magnetic plating may be tin plating or gold plating. In other words, non-magnetic plating may be plating that does not use magnetic materials such as iron, cobalt, and nickel.

[0031] [Example power supply terminals] Next, the power supply terminal of the reference example will be described using Figure 3. Figure 3 is a diagram showing an example of a cross-section of the power supply terminal in the reference example. As shown in Figure 3, the through hole 180 of the base 1110 has a through hole 180a and a counterbore portion 180b communicating with the through hole 180a. Inside the through hole 180, there is a power supply terminal 181, sleeves 182 and 183, a ring 184 (hereinafter referred to as the C-ring) which has a C-shape when viewed from above, and a cover 185. The power supply terminal 181 has a first terminal 181a, a second terminal 181b, and stranded wire 181c.

[0032] The first terminal 181a is joined at its upper end to terminal 33a of the bias electrode 33. The second terminal 181b is positioned from the center of the through hole 180a to the counterbore portion 180b. The stranded wire 181c is fitted into the recess 181d provided in the first terminal 181a and the recess 181e provided in the second terminal 181b, respectively, connecting the first terminal 181a and the second terminal 181b. The stranded wire 181c has strength that prevents buckling even when compressed with a force of, for example, about 10N. Sleeves 182 and 183 are provided around the power supply terminal 181 and are fixed by a C-ring 184 fitted to the lower part of the second terminal 181b. The area around the C-ring 184 is fixed by a cover 185. An insertion hole 181f for a connector pin 186, which will be described later, is provided on the lower side of the second terminal 181b.

[0033] Since the power supply terminal 181 is fixed at its upper part by joining with terminal 33a and at its lower part by the C-ring 184 and cover 185, the second terminal 181b cannot move in either the horizontal or vertical direction. Therefore, if the electrostatic chuck 1111 moves horizontally 60 or vertically 61 due to expansion or contraction caused by temperature changes, a load will be placed on the stranded wire 181c, and there is a risk that the stranded wire 181c will break.

[0034] Next, the path (RF path) when supplying an RF signal will be explained using Figures 4 and 5. Figure 4 is a diagram showing an example of the RF path near the power supply terminal in this embodiment. As shown in Figure 4, near the power supply terminal 81 in this embodiment, the RF signal flows from the base 1110 through the connector 82, recess 82a and spring-like member 84 to the lower end 81f of the second terminal 81b, as shown by arrow 70. After that, the RF signal flows to terminal 33a through the second terminal 81b, stranded wire 81c and first terminal 81a, as shown by arrow 71, and then to the bias electrode 33, as shown by arrow 72. In other words, in this embodiment, the RF signal can be transmitted from the base 1110 to the bias electrode 33 in the electrostatic chuck 1111 without any power supply parts protruding from the lower surface of the base 1110. Therefore, it is possible to save space at the bottom of the base 1110.

[0035] Figure 5 shows an example of the RF path near the power supply terminal in the reference example. As shown in Figure 5, in the power supply terminal 181 of the reference example, the connector pin 186 is inserted into the insertion hole 181f, so the lower part of the connector pin 186 protrudes from the bottom of the base 1110. Also, since the base 1110 and the lower part of the connector pin 186 are connected by a cable 187, the cable 187 also protrudes from the bottom of the base 1110. Therefore, space saving is difficult at the bottom of the base 1110. Near the power supply terminal 181 of the reference example, the RF signal flows from the base 1110 through the cable 187 to the connector pin 186, as shown by arrows 75 and 76. Subsequently, the RF signal flows from the connector pin 186 to terminal 33a via the second terminal 181b, stranded wire 181c and first terminal 181a, as shown by arrow 77, and then to the bias electrode 33, as shown by arrow 78.

[0036] [Differentiation] In the above embodiment, the bias RF signal applied to the base 1110 is supplied to the bias electrode 33 via the base 1110 and the connector 82. In this embodiment, the connector 82 is a conductive member, and there is electrical conductivity between the base 1110 and the power supply terminal 81. However, when supplying a DC or AC signal without going through the base 1110 and the connector 82, the base 1110 and the power supply terminal 81 may be insulated. This case will be described as a modified example. Note that the plasma processing apparatus in the modified example is the same as in the above embodiment, so the description of its redundant configuration and operation will be omitted.

[0037] In a modified example, for instance, the connector 82 is formed of a resin such as PEEK (Poly Ether Ether Ketone), i.e., a non-conductive material. As shown in Figure 2, the second terminal 81b of the power supply terminal 81 is supported by a spring-like member 84 in the through-hole 86 of the connector 82. Therefore, if the connector 82 is made of a non-conductive material, insulation can be provided between the base 1110 and the power supply terminal 81. In this case, it is preferable to form an insulating film on the inner surface of the through-hole 80 to suppress discharge between the base 1110 and the power supply terminal 81. In another modified example, a power supply cable (not shown) is connected to the lower end portion 81f of the power supply terminal 81. The modified example can be applied, for example, when applying a DC voltage to the electrostatic electrode 1111b, or when supplying DC or low-frequency AC power to a heater electrode (not shown). The modified example can also be applied, for example, when supplying a low-frequency RF signal such as 400 kHz. In other words, in this modified example, the RF signal supplied to the base 1110 and the RF signal supplied to the bias electrode 33 can be different RF signals (different in frequency, waveform, power level, etc.).

[0038] As described above, according to this embodiment, the substrate support portion 11 of the substrate processing apparatus (plasma processing apparatus 1) comprises a base 1110 having a through hole 80 that penetrates from the top surface to the bottom surface, and a counterbore portion 80b that communicates with the through hole 80a formed on the bottom surface, an electrostatic chuck 1111 disposed on the upper part of the base 1110 and having a substrate support surface (central region 111a) and a ring support surface (annular region 111b), an electrode (bias electrode 33) disposed inside the electrostatic chuck 1111, and a through hole 80 The power supply terminal 81 includes a first terminal 81a that is placed and electrically connected to an electrode, a second terminal 81b that is positioned in a through hole 80a and a counterbore 80b, a stranded wire 81c that fits into a recess 81d in the first terminal 81a and a recess 81e in the second terminal 81b, respectively, and electrically connects the first terminal 81a and the second terminal 81b, and a connector 82 that is positioned in the counterbore 80b and supports the second terminal 81b so that it can move while maintaining contact with the second terminal 81b. As a result, disconnection of the stranded wire 81c of the power supply terminal 81 can be suppressed.

[0039] Furthermore, according to this embodiment, the connector 82 has an annular recess 82a on the inner surface of a through hole 86 provided in the center of the connector 82, and the second terminal 21b is supported by a spring-like member 84 placed inside the annular recess 82a. As a result, it is possible to reduce the load on the stranded wire 81c while maintaining conductivity between the power supply terminal 81 and the connector 82.

[0040] Furthermore, according to this embodiment, the base 1110, connector 82, and spring-like member 84 are conductive members, and the electrodes and the base 1110 are electrically connected via the first terminal 81a, stranded wire 81c, second terminal 81b, spring-like member 84, and connector 82. As a result, RF signals can be supplied from the base 1110 to the electrodes in the electrostatic chuck 1111 without any parts protruding from the underside of the base 1110.

[0041] Furthermore, according to this embodiment, the spring-like member 84 is made of a copper alloy and its surface is silver-plated. As a result, an RF signal can be transmitted from the connector 82 to the power supply terminal 81.

[0042] In another modified configuration, the base 1110 is made of a conductive material, the connector 82 is made of a non-conductive material, and the base 1110 is insulated from the first terminal 81a, the stranded wire 81c, and the second terminal 81b. As a result, power can be supplied to the electrodes in the electrostatic chuck 1111 from a power source different from the power source connected to the base 1110, such as a DC power source or a low-frequency RF power source.

[0043] Furthermore, according to this embodiment and its modifications, the connector 82 is fixed to the base 1110 by a screw 83 provided at the lower part of the base 1110. As a result, the power supply terminal 81 can be fixed to the base 1110 in a movable state.

[0044] Furthermore, according to this embodiment and its modifications, the connector 82 is made of copper and its surface is silver-plated. As a result, RF signals can be transmitted from the base 1110 to the power supply terminal 81, and copper contamination can be suppressed.

[0045] Furthermore, according to this embodiment and its modifications, the first terminal 81a, stranded wire 81c, and second terminal 81b are made of copper, and their surfaces are solid copper surfaces. As a result, RF signals can be transmitted from the connector 82 to the electrodes in the electrostatic chuck 1111.

[0046] Furthermore, according to this embodiment and its modifications, the first terminal 81a, stranded wire 81c, and second terminal 81b are made of copper and their surfaces are plated with a non-magnetic material. As a result, RF signals can be transmitted from the connector 82 to the electrodes in the electrostatic chuck 1111, and copper contamination can be suppressed.

[0047] Furthermore, according to this embodiment and its modifications, the first terminal 81a, the stranded wire 81c, and the second terminal 81b are made of a non-magnetic material. As a result, an RF signal can be transmitted from the connector 82 to the electrodes in the electrostatic chuck 1111.

[0048] Furthermore, according to this embodiment and its modified form, the electrode and the first terminal 81a are electrically connected using silver solder. As a result, an RF signal can be transmitted from the power supply terminal 81 to the electrode inside the electrostatic chuck 1111.

[0049] Furthermore, according to this embodiment and its modifications, an insulating film is formed on the inner surface of the through hole 80. As a result, discharge between the base 1110 and the power supply terminal 81 can be suppressed.

[0050] The embodiments disclosed herein should be considered in all respects to be illustrative and not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

[0051] In the embodiment described above, the bias electrode 33 was given as the electrode to which the power supply terminal 81 is connected, but it is not limited to this. For example, any electrode within the electrostatic chuck 1111 may be connected, such as the electrostatic electrode 1111b or a heater electrode (not shown).

[0052] Furthermore, although the above-described embodiment uses a plasma processing apparatus 1 that performs etching and other processing on a substrate W using a capacitively coupled plasma as the plasma source as an example, the disclosed technology is not limited to this. Any plasma source can be used as long as it is a device that performs processing on a substrate W using plasma, and is not limited to a capacitively coupled plasma. For example, an inductively coupled plasma, microwave plasma, magnetron plasma, etc., can be used.

[0053] Furthermore, this disclosure can also be structured as follows: (1) A base having a through hole formed from the top surface to the bottom surface, and a counterbore formed on the bottom surface that communicates with the through hole, An electrostatic chuck is positioned on top of the base and has a substrate support surface and a ring support surface, The electrodes placed inside the electrostatic chuck, A first terminal is placed within the through hole and electrically connected to the electrode, The through hole and the second terminal located within the counterbore, A stranded wire that fits into the recess provided in the first terminal and the recess provided in the second terminal, respectively, to electrically connect the first terminal and the second terminal, A connector disposed within the recessed portion and supporting the second terminal so as to be movable while maintaining contact with the second terminal, A substrate support section having the following features. (2) The connector has an annular recess on the inner surface of a through hole provided in the center of the connector, and the second terminal is supported by a spring-like member placed in the annular recess. The substrate support portion described in (1) above. (3) The base, the connector, and the spring-like member are conductive members. The electrode and the base are electrically connected via the first terminal, the stranded wire, the second terminal, the spring-like member, and the connector. The substrate support portion described in (2) above. (4) The spring-like member is made of a copper alloy and its surface is silver-plated. The substrate support portion described in (2) or (3) above. (5) The base is a conductive member, The connector is made of a non-conductive material, The base, the first terminal, the stranded wire, and the second terminal are insulated from each other. The substrate support portion described in (2) above. (6) The connector is fixed to the base by a screw provided at the lower part of the base. A substrate support part as described in any one of (1) to (5) above. (7) The connector is made of copper and has a silver-plated surface. A substrate support part as described in any one of (1) to (6) above. (8) The first terminal, the stranded wire, and the second terminal are made of copper, and their surfaces are solid copper surfaces. A substrate support part as described in any one of (1) to (7) above. (9) The first terminal, the stranded wire, and the second terminal are made of copper and their surfaces are plated with a non-magnetic material. A substrate support part as described in any one of (1) to (7) above. (10) The first terminal, the stranded wire, and the second terminal are formed of a non-magnetic material. A substrate support part as described in any one of (1) to (7) above. (11) The electrode and the first terminal are electrically connected using silver solder. A substrate support part as described in any one of (1) to (10) above. (12) An insulating film is formed on the inner surface of the through hole. A substrate support part as described in any one of (1) to (11) above. (13) Processing container and The processing container includes a substrate support portion, The substrate support portion is, A base having a through hole formed from the top surface to the bottom surface, and a counterbore formed on the bottom surface that communicates with the through hole, An electrostatic chuck is positioned on top of the base and has a substrate support surface and a ring support surface, The electrodes placed inside the electrostatic chuck, A first terminal is placed within the through hole and electrically connected to the electrode, The through hole and the second terminal located within the counterbore, A stranded wire that fits into the recess provided in the first terminal and the recess provided in the second terminal, respectively, to electrically connect the first terminal and the second terminal, A connector disposed within the recessed portion and supporting the second terminal so as to be movable while maintaining contact with the second terminal, Having, Circuit board processing equipment. [Explanation of Symbols]

[0054] 1. Plasma processing equipment 10 Plasma processing chamber 11. Substrate support section 33 Bias electrode 80,80a through hole 80b Counterbore section 81 Power supply terminal 81a First terminal 81b Second terminal 81c stranded wire 81d, 81e recess 82 connectors 82a Recess 83 screws 84 Spring-like member 111a Central area 111b Circular region 1110 base 1111 Electrostatic Chuck

Claims

1. A base having a through hole formed from the top surface to the bottom surface, and a counterbore formed on the bottom surface that communicates with the through hole, An electrostatic chuck is positioned on top of the base and has a substrate support surface and a ring support surface, The electrodes placed inside the electrostatic chuck, A first terminal is placed within the through hole and electrically connected to the electrode, The through hole and the second terminal disposed within the counterbore, A stranded wire that fits into the recess provided in the first terminal and the recess provided in the second terminal, respectively, to electrically connect the first terminal and the second terminal, A connector is disposed within the recessed portion and supports the second terminal so that it can move while maintaining contact with the second terminal, It has, The connector has an annular recess on the inner surface of a through hole provided in the center of the connector, and the second terminal is supported by a spring-like member placed in the annular recess. The base, the connector, and the spring-like member are conductive members. The electrode and the base are electrically connected via the first terminal, the stranded wire, the second terminal, the spring-like member, and the connector. Circuit board support section.

2. A base having a through hole formed from the top surface to the bottom surface, and a counterbore formed on the bottom surface that communicates with the through hole, An electrostatic chuck is positioned on top of the base and has a substrate support surface and a ring support surface, The electrodes placed inside the electrostatic chuck, A first terminal is placed within the through hole and electrically connected to the electrode, The through hole and the second terminal disposed within the counterbore, A stranded wire that fits into the recess provided in the first terminal and the recess provided in the second terminal, respectively, to electrically connect the first terminal and the second terminal, A connector is disposed within the recessed portion and supports the second terminal so that it can move while maintaining contact with the second terminal, It has, The connector has an annular recess on the inner surface of a through hole provided in the center of the connector, and the second terminal is supported by a spring-like member placed in the annular recess. The spring-like member is made of a copper alloy and its surface is silver-plated. Circuit board support section.

3. The spring-like member is made of a copper alloy and its surface is silver-plated. The substrate support portion according to claim 1.

4. The connector is fixed to the base by a screw provided at the lower part of the base. A substrate support part according to any one of claims 1 to 3.

5. The connector is made of copper and has a silver-plated surface. A substrate support part according to any one of claims 1 to 3.

6. The first terminal, the stranded wire, and the second terminal are made of copper, and their surfaces are solid copper surfaces. A substrate support part according to any one of claims 1 to 3.

7. The first terminal, the stranded wire, and the second terminal are made of copper and their surfaces are plated with a non-magnetic material. A substrate support part according to any one of claims 1 to 3.

8. The first terminal, the stranded wire, and the second terminal are formed of a non-magnetic material. A substrate support part according to any one of claims 1 to 3.

9. The electrode and the first terminal are electrically connected using silver solder. A substrate support part according to any one of claims 1 to 3.

10. An insulating film is formed on the inner surface of the through hole. A substrate support part according to any one of claims 1 to 3.

11. Processing container and The processing container includes a substrate support portion, The substrate support portion is, A base having a through hole formed from the top surface to the bottom surface, and a counterbore formed on the bottom surface that communicates with the through hole, An electrostatic chuck is positioned on top of the base and has a substrate support surface and a ring support surface, The electrodes placed inside the electrostatic chuck, A first terminal is placed within the through hole and electrically connected to the electrode, The through hole and the second terminal disposed within the counterbore, A stranded wire that fits into the recess provided in the first terminal and the recess provided in the second terminal, respectively, to electrically connect the first terminal and the second terminal, A connector is disposed within the recessed portion and supports the second terminal so that it can move while maintaining contact with the second terminal, It has, The connector has an annular recess on the inner surface of a through hole provided in the center of the connector, and the second terminal is supported by a spring-like member placed in the annular recess. The base, the connector, and the spring-like member are conductive members. The electrode and the base are electrically connected via the first terminal, the stranded wire, the second terminal, the spring-like member, and the connector. Circuit board processing equipment.

12. A processing container and The processing container includes a substrate support portion, The substrate support portion is, A base having a through hole formed from the top surface to the bottom surface, and a counterbore formed on the bottom surface that communicates with the through hole, An electrostatic chuck is positioned on top of the base and has a substrate support surface and a ring support surface, The electrodes placed inside the electrostatic chuck, A first terminal is placed within the through hole and electrically connected to the electrode, The through hole and the second terminal disposed within the counterbore, A stranded wire that fits into the recess provided in the first terminal and the recess provided in the second terminal, respectively, to electrically connect the first terminal and the second terminal, A connector is disposed within the recessed portion and supports the second terminal so that it can move while maintaining contact with the second terminal, It has, The connector has an annular recess on the inner surface of a through hole provided in the center of the connector, and the second terminal is supported by a spring-like member placed in the annular recess. The spring-like member is made of a copper alloy and its surface is silver-plated. Circuit board processing equipment.

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