Photosensitive resin composition, cured product, laminate, display device, and method for manufacturing the display device.

JP7916777B2Active Publication Date: 2026-09-08TORAY INDUSTRIES INC
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Patent Information

Application Number
JP2022510943
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-02-24
Filing Date
2022-02-10
Publication Date
2026-09-08
Estimated Expiration
2042-02-10

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Benefits of technology

【0017】 本発明の感光性樹脂組成物により、欠陥が少なく、開口部のインク濡れ性、およびUVオゾン処理後の隔壁上面の撥液性に優れる隔壁を得ることができる。

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Abstract

A purpose of the present invention is to obtain a photosensitive resin composition capable of giving banks which have few defects and in which the open portions have excellent wettability by inks and the bank top surfaces have excellent liquid repellency after a UV ozone treatment. This photosensitive resin composition comprises a polysiloxane (A), an alkali-soluble resin (B), and a photosensitizer (C), wherein the polysiloxane (A) has a specific repeating-unit structure.
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Description

[Technical Field]

[0001] The present invention relates to a photosensitive resin composition, a cured product, a laminate, a display device, and a method for manufacturing a display device. [Background technology]

[0002] In display devices with thin displays, such as smartphones, tablet PCs, and televisions, many products have been developed that form functional layers using printing methods, such as the inkjet method. For example, in the case of organic electroluminescent (hereinafter referred to as "organic EL") display devices, a method is known in which, after forming a partition pattern on a substrate, functional material solutions such as light-emitting materials, hole transport materials, and electron transport materials are dropped into the openings between the partitions using the inkjet method to form an organic EL display device with a functional layer.

[0003] Generally, an organic EL display device has a drive circuit, a planarization layer, a first electrode, an insulating layer, an emissive layer, and a second electrode on a substrate, and can emit light by applying a voltage between the opposing first and second electrodes. Among these, photosensitive resin compositions that can be patterned by ultraviolet irradiation are generally used as the material for the planarization layer and the insulating layer. In particular, photosensitive resin compositions using polyimide resin or polybenzoxazole resin are preferred because the resin has high heat resistance and generates little gas from the cured product, thus providing a highly durable organic EL display device (Patent Document 1).

[0004] When forming a functional layer using an inkjet method, it is necessary to impart liquid-repellent properties to the upper surface of the partition walls to prevent the mixing of inks injected into adjacent openings. Furthermore, to prevent white spots in the display device, the openings between the partition walls must have good wettability to the ink.

[0005] To achieve this, a method has been investigated in which the upper surface of the partition wall pattern on the substrate is subjected to a plasma irradiation fluorination treatment to produce liquid-repellent properties (Patent Document 2).

[0006] In addition, methods for forming partitions using a photosensitive resin composition containing an alkali-soluble resin and a liquid-repellent compound have been investigated. For example, a resist composition containing a fluorinated acrylic polymer (Patent Document 3) and a photosensitive resin composition containing a polysiloxane having an alkyl fluoride group (Patent Document 4) have been investigated. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Publication No. 2002-91343 [Patent Document 2] Japanese Patent Publication No. 2002-207114 [Patent Document 3] Japanese Patent Publication No. 2012-220855 [Patent Document 4] International Publication No. 2019 / 159000 [Overview of the project] [Problems that the invention aims to solve]

[0008] The technology described in Patent Document 1 has a problem in that the upper surface of the formed partition wall does not have liquid-repellent properties, so the functional material solution dropped by the inkjet method can penetrate the partition wall and mix into nearby pixels, causing luminescence defects.

[0009] The technology described in Patent Document 2 has a problem in that the fluorination treatment causes liquid-repellent components to adhere to the openings between the partitions, resulting in insufficient ink wettability of the openings.

[0010] The technologies described in Patent Documents 3 and 4 possess sufficient liquid repellency and allow for pattern formation as a photosensitive resin composition. However, the fluorine-based acrylic polymer in Patent Document 3 has poor UV-ozone resistance, resulting in insufficient liquid repellency on the upper surface of the partition after UV-ozone treatment. Furthermore, it has poor heat resistance, leading to problems with ink wettability due to contamination of the openings during curing.

[0011] The polysiloxane containing fluorine atoms described in Patent Document 4 has excellent heat resistance, but its insufficient alkali solubility presents challenges in ink wettability due to residue at the openings after development. Furthermore, there is a problem with the aggregation of alkyl fluorides, resulting in defects in the cured product.

[0012] Therefore, the present invention aims to provide a photosensitive resin composition that can produce partitions with fewer defects, excellent ink wettability of the openings, and excellent liquid repellency of the upper surface of the partition after UV ozone treatment. [Means for solving the problem]

[0013] To solve the above problems, the present invention has the following configuration.

[0014] In other words, the photosensitive resin composition of the present invention is A photosensitive resin composition comprising a polysiloxane (A), an alkali-soluble resin (B), and a photosensitive agent (C), A photosensitive resin composition in which the polysiloxane (A) has repeating unit structures of (i), (ii), and (iii). (i) Repeating unit structure shown by equation (1) and / or repeating unit structure shown by equation (2) (ii) Repeating unit structure shown by equation (3) and / or repeating unit structure shown by equation (4) (iii) Repeating unit structure shown by formula (5) and / or repeating unit structure shown by formula (6)

[0015] [ka]

[0016] R f R is a fluorinated alkyl group having 7 to 21 fluorines and 5 to 12 carbon atoms. 1 R is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 15 carbon atoms. 2 R is an aryl group having 6 to 15 carbon atoms. 3R is a single bond or an alkylene group having 1 to 4 carbon atoms, and Y is 1 or 2. 4 * indicates an organic group with 2 to 20 carbon atoms that contains an acidic group. * indicates a covalent bond. [Effects of the Invention]

[0017] The photosensitive resin composition of the present invention makes it possible to obtain partitions with fewer defects, excellent ink wettability at the openings, and excellent liquid repellency on the upper surface of the partition after UV ozone treatment. [Brief explanation of the drawing]

[0018] [Figure 1] This is a schematic diagram of the substrate used for evaluation in the embodiment. [Figure 2] This is a schematic diagram of a cross-section of an example of a laminate. [Figure 3] This is a schematic diagram of a cross-section of another example of a laminate. [Modes for carrying out the invention]

[0019] Embodiments of the present invention will be described in detail.

[0020] The photosensitive resin composition of the present invention is a photosensitive resin composition comprising a polysiloxane (A), an alkali-soluble resin (B), and a photosensitive agent (C), wherein the polysiloxane (A) has repeating unit structures of (i), (ii), and (iii). (i) Repeating unit structure shown by equation (1) and / or repeating unit structure shown by equation (2) (ii) Repeating unit structure shown by equation (3) and / or repeating unit structure shown by equation (4) (iii) Repeating unit structure shown by formula (5) and / or repeating unit structure shown by formula (6)

[0021] [ka]

[0022] R fis a fluorinated alkyl group having 7 to 21 fluorine atoms and 5 to 12 carbon atoms, R 1 is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms or an aryl group having 6 to 15 carbon atoms. R 2 is an aryl group having 6 to 15 carbon atoms, R 3 is a single bond or an alkylene group having 1 to 4 carbon atoms, and Y is 1 or 2. R 4 is an organic group having 2 to 20 carbon atoms containing an acidic group. * represents a covalent bond.

[0023] In the photosensitive resin composition of the present invention, the total content of polysiloxane (A), alkali-soluble resin (B) and photosensitizer (C) is preferably 50% by mass or more, more preferably 70% by mass or more, based on 100% by mass of the photosensitive resin composition. The upper limit is not particularly limited, but is 100% by mass. When the photosensitive resin composition contains an organic solvent (D) described later, the above total content is the total content based on 100% by mass of the photosensitive resin composition excluding the organic solvent (D).

[0024] <Polysiloxane (A)> Polysiloxane (A) has repeating unit structures of (i), (ii) and (iii). (i) a repeating unit structure represented by formula (1) and / or a repeating unit structure represented by formula (2) (ii) a repeating unit structure represented by formula (3) and / or a repeating unit structure represented by formula (4) (iii) a repeating unit structure represented by formula (5) and / or a repeating unit structure represented by formula (6) When the photosensitive resin composition contains polysiloxane (A), high liquid repellency can be imparted to the top surface of the cured product. Furthermore, since the polysiloxane in the main chain is excellent in UV ozone resistance, high liquid repellency can be imparted to the top surface of the cured product after UV ozone treatment. In addition, since the polysiloxane in the main chain has excellent heat resistance, it does not decompose during the curing step, prevents the liquid-repellent component from scattering into the opening, and improves the wettability of the functional ink applied to the opening.

[0025] [ka]

[0026] R f R is a fluorinated alkyl group having 7 to 21 fluorines and 5 to 12 carbon atoms. 1 R is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 15 carbon atoms. 2 R is an aryl group having 6 to 15 carbon atoms. 3 R is a single bond or an alkylene group having 1 to 4 carbon atoms, and Y is 1 or 2. 4 * indicates an organic group with 2 to 20 carbon atoms that contains an acidic group. * indicates a covalent bond.

[0027] Polysiloxane (A) has (i) a repeating unit structure represented by formula (1) and / or formula (2). f The alkyl fluoride is a fluoride alkyl group having 7 to 21 fluorines and 5 to 12 carbon atoms. More preferably, it is a fluoride alkyl group having 9 to 13 fluorines and 6 to 8 carbon atoms. By using an alkyl fluoride with 7 or more fluorines and 5 or more carbon atoms, good liquid repellency can be achieved on the surface of the cured product. Furthermore, by using an alkyl fluoride with 21 or fewer fluorines and 12 or more carbon atoms, good compatibility with the alkali-soluble resin described later can be obtained. In addition, to reduce the environmental burden, alkyl fluoride with 13 or fewer fluorines and 8 or fewer carbon atoms is more preferable.

[0028] R f Specific examples of alkyl fluoride groups shown include heptafluoropentyl group, nonafluorohexyl group, tridecafluorooctyl group, heptadecafluorodecyl group, and 5,5,6,6,7,7,7-heptafluoro-4,4-bis(trifluoromethyl)heptyl group. From the viewpoint of liquid repellency and environmental impact, nonafluorohexyl group and tridecafluorooctyl group, which have 9 to 13 fluorines and 6 to 8 carbon atoms, are preferred.

[0029] It is preferable that the polysiloxane (A) contains a total of 5 to 30 mol% of the repeating unit structure represented by formula (1) and / or formula (2) within 100 mol% of the total repeating unit structure. More preferably, it contains 10 to 25 mol%. By containing 5 mol% or more of the repeating unit structure represented by formula (1) and / or formula (2), good liquid repellency can be achieved. Furthermore, by containing 30 mol% or less, aggregation of alkyl fluoride can be reduced.

[0030] Polysiloxane (A) has (ii) a repeating unit structure represented by formula (3) and / or formula (4). The repeating unit structure represented by formula (3) and / or formula (4) has an aryl group, and therefore R is sterically hindered by the aryl group. f This suppresses the aggregation of alkyl fluoride groups and allows for the production of cured products with fewer defects.

[0031] In the repeating unit structure shown in equation (3) and / or equation (4), R 2 R is an aryl group having 6 to 15 carbon atoms. In this invention, R f From the viewpoint of the effect of inhibiting aggregation of alkyl fluoride shown, R 2 Preferably, at least one of these is a structure represented by formula (26) or formula (27).

[0032] [ka]

[0033] R 16 b is a hydroxyl group, a C1-C5 alkyl group, a C1-C5 alkoxy group, a C1-C5 halogenated alkyl group, a C1-C5 hydroxyalkyl group, or a C1-C5 halogenated hydroxyalkyl group. b is an integer from 0 to 3. * indicates a covalent bond.

[0034] Specific examples of C1-C5 alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, and t-butyl groups. Specific examples of C1-C5 alkoxy groups include methoxy and ethoxy groups. Specific examples of C1-C5 halogenated alkyl groups include trifluoromethyl, pentafluoroethyl, heptafluoropropyl, trichloromethyl, pentachloroethyl, and heptachloropropyl groups. Specific examples of C1-C5 hydroxyalkyl groups include hydroxymethyl, 2-hydroxyethyl, 2-hydroxypropyl, and 3-hydroxypropyl groups. The following structures are examples of C1-C5 halogenated hydroxyalkyl groups.

[0035] [ka]

[0036] In formula (27), R 16 The bond can be located on either of the two rings of the naphthalene ring.

[0037] b is an integer between 0 and 3. From the viewpoint of polymerizability, b is preferably between 0 and 2, and more preferably between 0 and 1.

[0038] Specific examples of formula (26) include phenyl group, 3-methylphenyl group, 4-methylphenyl group, 3-ethylphenyl group, 4-ethylphenyl group, 3-t-butylphenyl group, 4-t-butylphenyl group, 3-hydroxyphenyl group, 4-hydroxyphenyl group, 3-methoxyphenyl group, 4-methoxyphenyl group, 3-trifluoromethylphenyl group, 4-trifluoromethylphenyl group, 3-hydroxymethylphenyl group, 4-hydroxymethylphenyl group, and the structure represented by formula (7).

[0039] [ka]

[0040] Here, * represents R 3 This shows a covalent bond directly connected to R. 3 When it is a single bond, it shows a covalent bond directly attached to the silicon atom. a is an integer from 1 to 3. From the viewpoint of polymerizability, a is preferably 1 to 2, and more preferably a is 1. The following structure is a specific example of the structure shown in formula (7).

[0041] [ka]

[0042] Specific examples of formula (27) include 1-naphthyl group, 2-naphthyl group, 4-methyl-1-naphthyl group, 4-hydroxy-1-naphthyl group, and 4-hydroxymethyl-1-naphthyl group.

[0043] In this invention, R f From the viewpoint of the effect of inhibiting aggregation of alkyl fluoride and controlling polymerizability shown, R 2 It is more preferable that at least one of these is a 1-naphthyl group, a 2-naphthyl group, or a structure represented by formula (7).

[0044] From the viewpoint of controlling polymerizability, it is more preferable that Y in the repeating unit structure shown in formula (4) is 1.

[0045] In the repeating unit structure shown in equation (3) and / or equation (4), R 3 These are single bonds or alkylene groups having 1 to 4 carbon atoms. Specific examples of alkylene groups having 1 to 4 carbon atoms include methylene, ethylene, n-propylene, isopropylene, n-butylene, and t-butylene groups.

[0046] It is preferable that the polysiloxane (A) contains 20 to 70 mol% of the total repeating unit structure represented by formula (3) and formula (4) within 100 mol% of the total repeating unit structure. More preferably, it contains 30 to 60 mol%. A good effect of suppressing the aggregation of alkyl fluoride can be obtained by containing 20 mol% or more of the total repeating unit structure represented by formula (3) and formula (4). Furthermore, from the viewpoint of controlling polymerizability, 70 mol% or less is preferable.

[0047] Polysiloxane (A) has a repeating unit structure represented by formula (5) and / or formula (6). The repeating unit structure represented by formula (5) and / or formula (6) has an organic group having 2 to 20 carbon atoms that contains an acidic group, which improves solubility in alkaline developers and allows for good ink wettability of openings. Furthermore, it suppresses the aggregation of the aforementioned alkyl fluoride and allows for the production of a cured product with fewer defects.

[0048] In the present invention, the C2-C20 organic group containing an acidic group is preferably an organic group containing at least one acidic group selected from the group consisting of a carboxyl group, a carboxylic acid anhydride group, a hydroxyl group, and a sulfonic acid group, and more preferably a structure represented by formula (8) or formula (9).

[0049] [ka]

[0050] R 15 * indicates a single bond or an alkylene group with 1 to 10 carbon atoms. * indicates a covalent bond.

[0051] From the viewpoint of the ink wettability of the opening, R 4 It is more preferable that it has a carboxyl group. That is, in the photosensitive resin composition of the present invention, R 4However, it is preferable that the organic group having 2 to 20 carbon atoms contains a carboxyl group. Furthermore, it is more preferable that the organic group is a dicarboxyl group obtained by hydrolysis of a carboxylic acid anhydride group. Specific examples of organic groups having 2 to 20 carbon atoms containing an acidic group include 2-hydroxyethyl group, 3-hydroxypropyl group, bis(2-hydroxyethyl)-3-aminopropyl group, carboxymethyl group, 2-carboxyethyl group, 3-carboxypropyl group, and the structures (α) and (β) shown below. As structures having a carboxyl group, carboxymethyl group, 2-carboxyethyl group, 3-carboxypropyl group, structure (α), and structure (β) are preferred, with structure (α) and structure (β) being more preferred.

[0052] [ka]

[0053] Here, * indicates a covalent bond directly connected to the silicon atom.

[0054] It is preferable that the polysiloxane (A) contains 1 to 40 mol% of the total repeating unit structure represented by formula (5) and formula (6) within 100 mol% of the total repeating unit structure. More preferably, it contains 5 to 30 mol%. By containing 1 mol% or more of the total repeating unit structure represented by formula (5) and formula (6), good ink wettability and compatibility of the opening can be achieved. Furthermore, by containing 40 mol% or less, good liquid repellency can be obtained.

[0055] The polysiloxane (A) preferably further has a repeating unit structure of (vii). (vii) Repeating unit structure shown by equation (25)

[0056] [ka]

[0057] * indicates a covalent bond.

[0058] The repeating unit structure of (vii) increases the degree of polymerization of polysiloxane (A), making it less likely for polysiloxane (A) to decompose during the curing process, preventing the scattering of liquid-repellent components to the openings, and further improving the wettability of the functional ink applied to the openings.

[0059] The polysiloxane (A) preferably contains 30 to 300 moles, and more preferably 101 to 200 moles, of the repeating unit structure of (vii) per 100 moles of the repeating unit structure of (iii). The acidic groups contained in the repeating unit structure of (iii) act as acid catalysts, thereby increasing the degree of polymerization of the repeating unit structure of (vii). By containing 30 moles or more of the repeating unit structure of (vii) per 100 moles of the repeating unit structure of (iii) in the polysiloxane (A), the heat resistance of the polysiloxane (A) is improved, making it less likely for the polysiloxane (A) to decompose during the curing process, preventing the scattering of liquid-repellent components to the openings, and further improving the wettability of the functional ink applied to the openings. Furthermore, by including 300 moles or less of the repeating unit structure of (vii) with 100 moles of the repeating unit structure of (iii) in the polysiloxane (A), the compatibility with the alkali-soluble resin (B), described later, is easily improved.

[0060] Polysiloxane (A) may have a repeating unit structure represented by formula (10) and / or formula (11).

[0061] [ka]

[0062] R 1 A hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 15 carbon atoms, R 5 is, R f , R 2 -R 3 -, R 4 This indicates an organic group with 1 to 10 carbon atoms that does not fall under any of the above categories.

[0063] R 5 is, R f , R 2 -R 3 -, R 4 The organic group having 1 to 10 carbon atoms that does not fall under any of the above categories is not particularly limited. 5 Specific examples include hydrocarbon groups such as methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, and cyclohexyl groups; amino group-containing groups such as 3-aminopropyl, N-(2-aminoethyl)-3-aminopropyl, and N-β-(aminoethyl)-γ-aminopropyl; cyano group-containing groups such as β-cyanoethyl; glycidoxymethyl, α-glycidoxyethyl, α-glycidoxypropyl, β-glycidoxypropyl, γ-glycidoxypropyl, α-glycidoxybutyl, and β-glycidoxybutyl. Examples include epoxy group-containing groups such as chloropropylmethyl group, γ-glycidoxybutyl group, σ-glycidoxybutyl group, (3,4-epoxycyclohexyl)methyl group, 3-(3,4-epoxycyclohexyl)propyl group, and 4-(3,4-epoxycyclohexyl)butyl group; chloro group-containing groups such as 3-chloropropylmethyl group; fluoro group-containing groups such as 2,2,2-trifluoroethyl group and 3,3,3-trifluoropropyl group; α,β-unsaturated ester group-containing groups such as γ-acryloylpropyl group and γ-methacryloylpropyl group; and vinyl group-containing groups such as vinyl group and styryl group.

[0064] In equations (1), (3), (5), and (10), R 1 R is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 15 carbon atoms. From the viewpoint of controlling polymerizability, 1 A hydrogen atom and an alkyl group having 1 to 6 carbon atoms are preferred. Specific examples of alkyl groups having 1 to 6 carbon atoms include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, and t-butyl groups. Of these, a hydrogen atom, methyl, and ethyl groups are more preferred from the viewpoint of controlling polymerizability.

[0065] In the photosensitive resin composition of the present invention, it is preferable that the content of polysiloxane (A) is 0.1 parts by mass or more and 10 parts by mass or less per 100 parts by mass of alkali-soluble resin (B), as described later. More preferably, it is 0.2 parts by mass or more and 5 parts by mass or less. A polysiloxane (A) content of 0.1 parts by mass or more allows for good liquid repellency. Furthermore, a content of 10 parts by mass or less can suppress the aggregation of the aforementioned alkyl fluoride.

[0066] (A) Polysiloxanes can be obtained, for example, by hydrolysis and polycondensation of alkoxysilanes represented by the following formulas (12), (13), and (14), and optionally by the following formulas (15) and (28), in a solvent. (A) Polysiloxanes are preferably polysiloxanes obtained in this manner.

[0067] [ka]

[0068] R f R is a fluorinated alkyl group having 7 to 21 fluorines and 5 to 12 carbon atoms. 1 R is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 15 carbon atoms. 2 R is an aryl group having 6 to 15 carbon atoms. 3 R is a single bond or an alkylene group having 1 to 4 carbon atoms, and Z is 1 or 2. 4 R is an organic group with 2 to 20 carbon atoms that contains an acidic group. 5 It is an organic group with 1 to 10 carbon atoms.

[0069] The hydrolysis reaction is preferably carried out in a solvent with an acid catalyst and water added to the alkoxysilanes represented by formulas (12), (13), and (14), and optionally formulas (15) and (28), and then reacted at room temperature to 110°C for 1 to 180 minutes. Carrying out the hydrolysis reaction under these conditions can suppress a rapid reaction. The reaction temperature is more preferably 40 to 105°C.

[0070] Furthermore, after obtaining a silanol compound by hydrolysis, it is preferable to heat the reaction solution at 50°C or higher and below the boiling point of the solvent for 1 to 100 hours to carry out a condensation reaction. In addition, it is possible to add an acid or base catalyst or reheat the mixture in order to increase the degree of polymerization of the siloxane compound obtained by the condensation reaction.

[0071] Various conditions in the hydrolysis reaction can be appropriately set, taking into consideration the reaction scale, size, and shape of the reaction vessel. For example, by setting the acid concentration, reaction temperature, and reaction time, a polysiloxane of the desired degree of polymerization can be obtained.

[0072] Deionized water is preferred for use in the hydrolysis reaction. The amount of water can be selected arbitrarily, but it is preferable to use 1.0 to 4.0 moles per mole of alkoxysilane compound.

[0073] The solvents used in the hydrolysis reaction include methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, t-butanol, 3-hydroxy-3-methyl-2-butanone, 5-hydroxy-2-pentanone, 4-hydroxy-4-methyl-2-pentanone (diacetone alcohol), ethyl lactate, butyl lactate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol mono-n-butyl ether, propylene glycol mono-t-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol monomethyl ether, 3-methoxy-1-butanol, 3-methyl-3-methoxy-1-butanol, ethylene glycol, propylene glycol, benzyl alcohol, 2-methylbenzyl alcohol, 3-methylbenzyl alcohol, 4-methylbenzyl alcohol, 4-isopropylbenzyl alcohol, 1-phenylethyl alcohol, 2-phenyl-2-propanol, 2-ethylbenzyl alcohol Alcohol-based solvents such as dipropyl alcohol, 3-ethylbenzyl alcohol, and 4-ethylbenzyl alcohol; ether-based solvents such as diethyl ether, diisopropyl ether, di-n-butyl ether, diphenyl ether, diethylene glycol ethyl methyl ether, diethylene glycol dimethyl ether, 1,2-dimethoxyethane, 1,2-diethoxyethane, and dipropylene glycol dimethyl ether; γ-butyrolactone, δ-valerolactone, propylene carbonate, ethyl acetate, n-propyl acetate, isopropyl acetate, n-propyl acetate Examples include ester solvents such as ethyl acetate, isobutyl acetate, propylene glycol monomethyl ether acetate, 3-methoxy-1-butyl acetate, 3-methyl-3-methoxy-1-butyl acetate, ethyl acetoacetate, and cyclohexanol acetate; amide solvents such as N,N-dimethylformamide, N,N-dimethylacetamide, N,N-dimethylisobutyrate, N-methyl-2-pyrrolidone, 1,3-dimethyl-2-imidazolidinone, and N,N-dimethylpropylene urea; and aromatic hydrocarbons such as toluene and xylene.

[0074] Acid catalysts used in hydrolysis reactions include hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, sulfuric acid, phosphoric acid, polyphosphate, polycarboxylic acid or its anhydride, and ion exchange resins. Acidic aqueous solutions using formic acid, acetic acid, or phosphoric acid are particularly preferred.

[0075] The acid catalyst content is preferably 0.05 parts by mass or more, more preferably 0.1 parts by mass or more, per 100 parts by mass of the total alkoxysilane compound used in the hydrolysis reaction. Furthermore, the acid catalyst content is preferably 10 parts by mass or less, more preferably 5 parts by mass or less. Here, the total amount of alkoxysilane compound refers to the amount including all of the alkoxysilane compound, its hydrolysates, and their condensates, and the same applies hereinafter. By setting the amount of acid catalyst to 0.05 parts by mass or more, hydrolysis proceeds smoothly, and by setting it to 10 parts by mass or less, the hydrolysis reaction can be easily controlled.

[0076] Furthermore, from the viewpoint of storage stability of the composition, it is preferable that the polysiloxane solution after hydrolysis and partial condensation does not contain the catalyst, and the catalyst can be removed as needed. There are no particular restrictions on the removal method, but washing with water and / or treatment with an ion exchange resin are preferred in terms of ease of operation and removal efficiency. Washing with water is a method in which the polysiloxane solution is diluted with a suitable hydrophobic solvent, and the organic layer obtained by washing it several times with water is concentrated using an evaporator or the like. Treatment with an ion exchange resin is a method in which the polysiloxane solution is brought into contact with a suitable ion exchange resin.

[0077] (A) The weight-average molecular weight (Mw) of the polysiloxane is not particularly limited, but is preferably 500 or more, more preferably 1,500 or more, in terms of polystyrene as measured by gel per emission chromatography (GPC). It is also preferably 20,000 or less, and even more preferably 10,000 or less.

[0078] <Alkali-soluble resin (B)> The photosensitive resin composition of the present invention contains an alkali-soluble resin (B).

[0079] In this invention, an alkali-soluble resin refers to a resin having a dissolution rate of 50 nm / min or more, as defined below. More specifically, it refers to a resin in which a solution of a resin dissolved in γ-butyrolactone is coated onto a silicon wafer, pre-baked at 120°C for 4 minutes to form a pre-baked film with a thickness of 10 μm ± 0.5 μm, the pre-baked film is immersed in a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution at 23 ± 1°C for 1 minute, and then rinsed with pure water, and the dissolution rate determined from the thickness reduction is 50 nm / min or more.

[0080] The alkali-soluble resin (B) preferably has alkali-soluble groups in its structural units and / or at the ends of its main chain in order to impart alkali solubility. An alkali-soluble group refers to a functional group that increases solubility in an alkaline solution by interacting with or reacting with an alkali. Preferred alkali-soluble groups include carboxyl groups, phenolic hydroxyl groups, sulfonic acid groups, and thiol groups.

[0081] The alkali-soluble resin (B) is not limited in terms of the type of main chain skeleton and side chains of the polymer constituting the resin, as long as it has the aforementioned alkali-soluble group structure. Examples include, but are not limited to, polyimide resins, polybenzoxazole resins, polyamide-imide resins, acrylic resins, novolac resins, polyhydroxystyrene resins, phenolic resins, and polysiloxane resins.

[0082] The alkali-soluble resin (B) preferably has a trifluoromethyl group. The trifluoromethyl group reduces the water absorption of the cured product of the photosensitive resin composition, thereby improving the durability of the display device. Furthermore, since the trifluoromethyl group does not impart liquid repellency, a cured product with a hydrophilic surface can be formed by the "half-exposure" method described later.

[0083] In the photosensitive resin composition of the present invention, the alkali-soluble resin (B) preferably contains one or more selected from the group consisting of polyimide, polybenzoxazole, polyamideimide, precursors of any of these, and copolymers thereof. These alkali-soluble resins may be contained individually or in combination of multiple alkali-soluble resins. Because these alkali-soluble resins have high heat resistance, when used in a display device, the amount of outgassing at high temperatures of 200°C or higher after heat treatment is reduced, thereby improving the durability of the display device.

[0084] Polyimides can be obtained, for example, by reacting tetracarboxylic acids or tetracarboxylic dianhydrides, tetracarboxylic diester dichlorides, etc., with diamines or diisocyanate compounds, trimethylsilylated diamines, etc. Polyimides have tetracarboxylic acid residues and diamine residues. Alternatively, polyimides can be obtained by dehydrating and cyclizing polyamic acid, one of the polyimide precursors obtained by reacting tetracarboxylic dianhydrides with diamines, by heat treatment. During this heat treatment, a solvent that forms an azeotrope with water, such as m-xylene, can also be added. Alternatively, they can be obtained by dehydrating and cyclizing by chemical heat treatment with a dehydration condensation agent such as a carboxylic acid anhydride or dicyclohexylcarbodiimide, or a base such as triethylamine, as a cyclization catalyst. Or, they can be obtained by adding a weakly acidic carboxylic acid compound and dehydrating and cyclizing by heat treatment at a low temperature of 100°C or less.

[0085] Polybenzoxazoles can be obtained, for example, by reacting a bisaminophenol compound with a dicarboxylic acid, a dicarboxylic acid chloride, or a dicarboxylic acid active ester. Polybenzoxazoles have dicarboxylic acid residues and bisaminophenol residues. Alternatively, polybenzoxazoles can be obtained by dehydrating and cyclizing a polyhydroxyamide, which is one of the polybenzoxazole precursors obtained by reacting a bisaminophenol compound with a dicarboxylic acid, through heat treatment. Or, they can be obtained by dehydrating and cyclizing through chemical treatment with the addition of phosphoric anhydride, a base, a carbodiimide compound, etc.

[0086] Examples of polyimide precursors include polyamic acid, polyamic acid esters, polyamic acid amides, and polyisoimides. For example, polyamic acid can be obtained by reacting tetracarboxylic acid or tetracarboxylic dianhydride, tetracarboxylic diester dichloride, etc., with diamine or diisocyanate compounds, or trimethylsilylated diamines. Polyimides can be obtained, for example, by dehydrating and cyclizing the polyamic acid obtained by the above method through heating or chemical treatment with acids or bases.

[0087] Examples of polybenzoxazole precursors include polyhydroxyamides. For example, polyhydroxyamides can be obtained by reacting bisaminophenol with dicarboxylic acids, dicarboxylic acid chlorides, or dicarboxylic acid active esters. Polybenzoxazoles can be obtained, for example, by dehydrating and cyclizing the polyhydroxyamide obtained by the above method through heating or chemical treatment with phosphoric anhydride, a base, or a carbodiimide compound.

[0088] Polyamide-imide precursors can be obtained, for example, by reacting tricarboxylic acids, corresponding tricarboxylic acid anhydrides, or tricarboxylic acid anhydride halides with diamines or diisocyanates. Polyamide-imides can be obtained, for example, by dehydrating and cyclizing the precursors obtained by the above methods through heating or chemical treatment with acids or bases.

[0089] Copolymers of polyimides, polybenzoxazoles, polyamideimides, or their precursors may be obtained through block copolymerization, random copolymerization, alternating copolymerization, graft copolymerization, or a combination thereof. For example, block copolymers can be obtained by reacting polyhydroxyamide with tetracarboxylic acid, the corresponding tetracarboxylic dianhydride, or tetracarboxylic diester dichloride. Furthermore, dehydration and ring closure can be achieved by heating or chemical treatment with acids or bases.

[0090] In the photosensitive resin composition of the present invention, it is preferable that polyimide, polybenzoxazole, polyamideimide, any of these precursors, and copolymers thereof have a structure represented by formula (16) in the residue of the carboxylic acid component and / or the residue of the diamine component. The structure represented by formula (16) has excellent compatibility with the aforementioned polysiloxane (A), so it is possible to suppress the aggregation of polysiloxane (A) and obtain a cured product with fewer defects. Furthermore, the trifluoromethyl group of the structure represented by (16) reduces the water absorption of the cured product of the photosensitive resin composition, thereby improving the durability of the display device. In addition, since the trifluoromethyl group does not impart liquid repellency, a cured product with a hydrophilic surface can be formed by "half exposure" as described later.

[0091] [ka]

[0092] * indicates a covalent bond.

[0093] In the photosensitive resin composition of the present invention, from the viewpoint of compatibility with the aforementioned polysiloxane (A) and water absorption of the cured product, it is more preferable that the polyimide, polybenzoxazole, polyamideimide, any of these precursors, and copolymers thereof have a structure represented by formula (16) in the carboxylic acid component residue and the diamine component residue.

[0094] The alkali-soluble resin (B) preferably has structural units represented by any of formulas (17) to (20), and more preferably has structural units represented by formula (20). It may contain two or more resins having these structural units, or two or more structural units may be copolymerized. The resin of alkali-soluble resin (B) preferably contains 3 to 1000 structural units represented by any of formulas (17) to (20) in its molecule, and more preferably contains 20 to 200.

[0095] [ka]

[0096] In formulas (17) to (20), R 6 and R 9 R is a tetravalent organic group. 7 , R 8 and R 11 R is a divalent organic group. 10 R is a trivalent organic group. 12 R is a 2-6 valent organic group. 13 R represents a 2- to 12-valent organic group. 14 represents a hydrogen atom or a monovalent hydrocarbon group with 1 to 20 carbon atoms. p represents an integer from 0 to 2, q represents an integer from 0 to 10, and n represents an integer from 0 to 2.

[0097] R 6 ~R 13 Preferably, all of these have aromatic rings and / or aliphatic rings.

[0098] R in equations (17) to (20) 6 , R 8 , R 10 , R 12 (COOR 14 ) n (OH) p Substructures containing can be obtained, for example, by using the corresponding carboxylic acid components. That is, for example, R 6 is a tetracarboxylic acid, R 8 is a dicarboxylic acid, R 10 is a tricarboxylic acid, R 12This can be obtained by using di-, tri-, or tetra-carboxylic acids. 6 , R 8 , R 10 , R 12 (COOR 14 ) n (OH) p Examples of carboxylic acid components used to obtain the product include, as examples of dicarboxylic acids, terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, bis(carboxyphenyl)hexafluoropropane, biphenyl dicarboxylic acid, benzophenone dicarboxylic acid, triphenyl dicarboxylic acid, etc.; as examples of tricarboxylic acids, trimellitic acid, trimesic acid, diphenyl ether tricarboxylic acid, biphenyl tricarboxylic acid, etc.; as examples of tetracarboxylic acids, pyromellitic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, 2,2',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-benzophenone tetracarboxylic acid, 2,2',3,3'-benzophenone tetracarboxylic acid, 2,2-bis(3,4-dicarboxy Examples include aromatic tetracarboxylic acids such as phenyl)hexafluoropropane, 2,2-bis(2,3-dicarboxyphenyl)hexafluoropropane, 1,1-bis(3,4-dicarboxyphenyl)ethane, 1,1-bis(2,3-dicarboxyphenyl)ethane, bis(3,4-dicarboxyphenyl)methane, bis(2,3-dicarboxyphenyl)methane, bis(3,4-dicarboxyphenyl)sulfone, bis(3,4-dicarboxyphenyl)ether, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetracarboxylic acid, and 3,4,9,10-perylenetetracarboxylic acid, as well as aliphatic tetracarboxylic acids such as butanetetracarboxylic acid and 1,2,3,4-cyclopentanetetracarboxylic acid. Of these, in formula (18), one or two carboxyl groups of the tricarboxylic acid and tetracarboxylic acid are COOR 14corresponds to the base. These acid components can be used as they are, or in the form of acid anhydrides, active esters, or the like. Alternatively, two or more of these acid components may be used in combination.

[0099] In the photosensitive resin composition of the present invention, as described above, the alkali-soluble resin (B) preferably has a structure represented by formula (16) in the residue of the carboxylic acid component. Therefore, as the carboxylic acid component, bis(carboxyphenyl)hexafluoropropane, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane, and 2,2-bis(2,3-dicarboxyphenyl)hexafluoropropane are preferred.

[0100] R in formulas (17) to (20) 7 , R 9 , R 11 , R 13 (OH) q can be obtained, for example, by using a corresponding diamine component for each partial structure containing R 7 , R 9 , R 11 , R 13 (OH) qExamples of diamine components used to obtain the product include hydroxyl group-containing diamines such as bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)methylene, bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxy)biphenyl, and bis(3-amino-4-hydroxyphenyl)fluorene, and 3-sulfonic acid-4,4' - Diamines containing sulfonic acid such as diaminodiphenyl ether, diamines containing thiol groups such as dimercaptophenylenediamine, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, benzine, m-phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis(4-aminophenoxyphenyl)sulfone, bis(3-aminophenoxyphenyl)sulfone, bis(4-aminophenoxy)biphenyl, bis{4-(4-aminophenoxy)phenyl}ether, 1,4-bis(4-aminophenoxy)benzene, 2,2'-dimethyl-4,4'-diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl Aromatic diamines such as phenyl, 3,3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, and 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, as well as compounds in which some of the hydrogen atoms of these aromatic rings are substituted with C1-C10 alkyl groups, trifluoromethyl groups, halogen atoms, etc., alicyclic diamines such as cyclohexyldiamine and methylenebiscyclohexylamine, 1,Examples of siloxane-based diamines include 3-bis(3-aminopropyl)tetramethyldisiloxane. These diamines can be used as is, or as corresponding diisocyanate compounds or trimethylsilylated diamines. Alternatively, two or more of these diamine components may be used in combination. For applications requiring heat resistance, it is preferable to use aromatic diamines in an amount of 50 mol or more of the total diamine composition.

[0101] In the photosensitive resin composition of the present invention, as described above, the alkali-soluble resin (B) preferably has a structure represented by formula (16) in the residue of the carboxylic acid component; therefore, bis(3-amino-4-hydroxyphenyl)hexafluoropropane is preferred as the diamine component.

[0102] Furthermore, in the photosensitive resin composition of the present invention, it is preferable that the alkali-soluble resin (B) has a siloxane-based diamine such as 1,3-bis(3-aminopropyl)tetramethyldisiloxane as its diamine component, from the viewpoint of adhesion to the substrate.

[0103] R in equations (17) to (20) 6 ~R 13 This resin may contain phenolic hydroxyl groups, sulfonic acid groups, thiol groups, etc., in its skeleton. By using a resin that has an appropriate amount of phenolic hydroxyl groups, sulfonic acid groups, or thiol groups, a positive-type photosensitive resin composition with appropriate alkali solubility can be obtained.

[0104] Furthermore, in order to improve the storage stability of the photosensitive resin composition, it is preferable to encapsulate the main chain ends of the alkali-soluble resin (B) with an end-capturing agent such as a monoamine, acid anhydride, monocarboxylic acid, monoacid chloride compound, or monoactive ester compound. The introduction rate of the monoamine used as an end-capturing agent is preferably 0.1 mol% or more, and particularly preferably 5 mol% or more, relative to the total amine components. Also, the introduction rate of the monoamine is preferably 60 mol% or less, and particularly preferably 50 mol% or less, relative to the total amine components. The introduction rate of the acid anhydride, monocarboxylic acid, monoacid chloride compound, or monoactive ester compound used as an end-capturing agent is preferably 0.1 mol% or more, and particularly preferably 5 mol% or more, relative to the diamine components. Also, the introduction rate is preferably 100 mol% or less, and particularly preferably 90 mol% or less, relative to the diamine components. Multiple different end groups may be introduced by reacting multiple end-capturing agents.

[0105] In resins having structural units represented by any of formulas (17) to (19), the number of repeating structural units is preferably 3 to 200. Furthermore, in resins having structural units represented by formula (20), the number of repeating structural units is preferably 10 to 1000. Within this range, thick films can be easily formed.

[0106] The alkali-soluble resin (B) may consist solely of structural units represented by any of formulas (17) to (20), or it may be a copolymer or mixture of structural units with other structural units. In this case, it is preferable that the structural units represented by any of formulas (17) to (20) constitute 10% by mass or more of the total resin, and more preferably 30% by mass or more. The type and amount of structural units used in copolymerization or mixing can be selected within a range that does not impair the mechanical properties of the thin film obtained by the final heat treatment.

[0107] <Photosensitive agent (C)> The photosensitive resin composition of the present invention contains a photosensitive agent (C). The photosensitive agent (C) may be a negative type that hardens with light, or a positive type that becomes solubilized with light. Preferably, the photosensitive agent (C) can contain a polymerizable unsaturated compound and a photopolymerization initiator (C-1), or a quinone diazide compound (C-2). Containing a quinone diazide compound (C-2) is preferable because it allows for the formation of a positive type photosensitive resin composition, and a stepped cured product can be formed in a single photolithography by "half exposure" as described later. Therefore, it is preferable that the photosensitive resin composition of the present invention contains a quinone diazide compound (C-2) as the photosensitive agent (C). Hereinafter, "polymerizable unsaturated compound and photopolymerization initiator (C-1)" may be simply referred to as "(C-1)".

[0108] Examples of polymerizable unsaturated compounds in (C-1) include compounds having unsaturated double bond functional groups such as vinyl groups, allyl groups, acryloyl groups, and methacryloyl groups, and / or unsaturated triple bond functional groups such as propargyl groups. Among these, conjugated vinyl groups, acryloyl groups, and methacryloyl groups are preferred in terms of polymerizability. Furthermore, the number of functional groups contained in one molecule is preferably 1 to 4 from the viewpoint of stability, and they do not have to be the same group. In addition, polymerizable unsaturated compounds with a molecular weight of 30 to 800 are preferred. If the molecular weight is in the range of 30 to 800, the compatibility with the polymer and reactive diluent is good. Specific examples of polymerizable unsaturated compounds include 1,9-nonanediol dimethacrylate, 1,10-decanediol dimethacrylate, dimethylol-tricyclodecanediacrylate, isobornyl acrylate, isobornyl methacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, and methylenebisacrylamine. Examples include mido, N,N-dimethylacrylamide, N-methylolacrylamide, 2,2,6,6-tetramethylpiperidinyl methacrylate, 2,2,6,6-tetramethylpiperidinyl acrylate, N-methyl-2,2,6,6-tetramethylpiperidinyl methacrylate, N-methyl-2,2,6,6-tetramethylpiperidinyl acrylate, ethylene oxide-modified bisphenol A diacrylate, ethylene oxide-modified bisphenol A dimethacrylate, N-vinylpyrrolidone, and N-vinylcaprolactam. These are used individually or in combination of two or more.

[0109] In the present invention, the content of polymerizable unsaturated compound in (C-1) is not particularly limited, but from the viewpoint of improving alkali solubility, it is preferably 5 parts by mass or more, and from the viewpoint of good pattern formation, it is preferably 50 parts by mass or less, per 100 parts by mass of alkali-soluble resin (B).

[0110] In (C-1), the photopolymerization initiator refers to a substance that initiates polymerization primarily by generating radicals when irradiated with light in the ultraviolet to visible light range. From the viewpoint of being able to use a general-purpose light source and rapid curing, a photopolymerization initiator selected from acetophenone derivatives, benzophenone derivatives, benzoin ether derivatives, and xanthone derivatives is preferred. Examples of preferred photopolymerization initiators include, but are not limited to, diethoxyacetophenone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexylphenyl ketone, isobutylbenzoin ether, benzoin methyl ether, thioxanthone, isopropylthioxanthone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropan-1-one, and 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1.

[0111] In the present invention, the content of the photopolymerization initiator in (C-1) is not particularly limited, but it is preferably 1 part by mass or more and 10 parts by mass or less per 100 parts by mass of alkali-soluble resin (B). Within this range, it is easier to ensure the interaction with the resin necessary for good pattern formation and transmittance necessary to obtain appropriate sensitivity.

[0112] Examples of quinone diazide compounds (C-2) include those in which the sulfonic acid of quinone diazide is ester-bonded to a polyhydroxy compound, those in which the sulfonic acid of quinone diazide is sulfonamide-bonded to a polyamino compound, and those in which the sulfonic acid of quinone diazide is ester-bonded and / or sulfonamide-bonded to a polyhydroxypolyamino compound. Not all functional groups of these polyhydroxy compounds, polyamino compounds, and polyhydroxypolyamino compounds are to be substituted with quinone diazide, but it is preferable that on average 40 mol% or more of the total functional groups are substituted with quinone diazide. In the present invention, the mol% of functional groups substituted with quinone diazide is referred to as the quinone diazide substitution rate. By using such quinone diazide compounds, a positive-type photosensitive resin composition that is sensitive to the i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) of mercury lamps, which are common ultraviolet rays, can be obtained.

[0113] The polyhydroxy compounds used here have two or more, preferably three or more, phenolic hydroxyl groups in their molecule. Examples of polyhydroxy compounds include Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, TrisP-SA, TrisOCR-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, methylenetris-FR-CR, BisRS-26X, DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, Dimethi Role-BisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC, TriML-P, TriML-35XL, TML-BP, TML-HQ, TML-pp-BPF, TML- Examples of such materials include, but are not limited to, BPA, TMOM-BP, HML-TPPHBA, HML-TPHAP (all trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-OC, BIP-PC, BIR-PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4PC, BIR-BIPC-F, TEP-BIP-A, 46DMOC, 46DMOEP, TM-BIP-A (all trade names, manufactured by Asahi Organic Chemicals Co., Ltd.), 2,6-dimethoxymethyl-4-t-butylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diacetoxymethyl-p-cresol, naphthol, tetrahydroxybenzophenone, methyl gallate, bisphenol A, bisphenol E, methylenebisphenol, BisP-AP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.), and novolac resins.

[0114] Examples of polyamino compounds include, but are not limited to, 1,4-phenylenediamine, 1,3-phenylenediamine, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfone, and 4,4'-diaminodiphenyl sulfide.

[0115] Examples of polyhydroxypolyamino compounds include, but are not limited to, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 3,3'-dihydroxybenzidine.

[0116] Examples of quinone diazide sulfonic acids include, but are not limited to, 1,2-naphthoquinone diazide-4-sulfonic acid and 1,2-naphthoquinone diazide-5-sulfonic acid.

[0117] In this invention, a quinone diazide compound (C-2) is preferably one in which quinone diazidesulfonic acid is bonded to a polyhydroxy compound. By using such a quinone diazide compound, it is possible to obtain high sensitivity and higher resolution by being exposed to the i-line (wavelength 365 nm), h-line (wavelength 405 nm), and g-line (wavelength 436 nm) of mercury lamps, which are common ultraviolet rays.

[0118] More preferred quinone diazide compounds (C-2) include those represented by formula (21) or formula (22).

[0119] [ka]

[0120] In formulas (21) and (22), Q independently represents a hydrogen atom, a group represented by structural formula (23), or a group represented by structural formula (24).

[0121] [ka]

[0122] It is even more preferable from the viewpoint of sensitivity that Q in formulas (21) and (22) is independently represented by a hydrogen atom or a group represented by structural formula (23).

[0123] The quinone diazide substitution ratio can be calculated as follows: for polyhydroxy compounds, "(moles of quinone diazidesulfonic acid ester groups) / (moles of hydroxyl groups before esterification of the polyhydroxy compound) × 100"; for polyamino compounds, "(moles of quinone diazidesulfonic acid amide groups) / (moles of amino groups before amidation of the polyamino compound) × 100"; and for polyhydroxypolyamino compounds, "{(moles of quinone diazidesulfonic acid ester groups) + (moles of quinone diazidesulfonic acid amide groups)} / {(moles of hydroxyl groups before esterification of the polyhydroxypolyamino compound) + (moles of amino groups before amidation of the polyhydroxypolyamino compound)} × 100".

[0124] In this invention, two or more quinone diazide compounds can be used. In this case, the quinone diazide substitution rate can be determined by summing the values ​​obtained by multiplying the quinone diazide substitution rate of each quinone diazide compound by its ratio to the total quinone diazide compounds, as shown in the formula below. Σ((Quinone diazide substitution rate of a certain quinone diazide compound) × (Ratio of a certain quinone diazide compound to all quinone diazide compounds)) Furthermore, the quinone diazide substitution rate of quinone diazide compounds in a photosensitive resin composition can be determined by removing the resin components of the photosensitive resin composition by reprecipitation or other methods, separating the constituent components by column preparation or other methods, and identifying their chemical structures by NMR or IR.

[0125] The method for producing quinone diazide compounds is not particularly limited, but they can be obtained by reacting quinone diazidesulfonic acid halide (preferably quinone diazidesulfonic acid chloride) with a polyhydroxy compound in a solvent such as acetone, dioxane, or tetrahydrofuran in the presence of an inorganic base such as sodium carbonate, sodium bicarbonate, sodium hydroxide, or potassium hydroxide, or an organic base such as trimethylamine, triethylamine, tripropylamine, diisopropylamine, tributylamine, pyrrolidine, piperidine, piperazine, morpholine, pyridine, or dicyclohexylamine, according to conventional methods.

[0126] In the present invention, the content of the quinone diazide compound (C-2) is not particularly limited, but the content of the quinone diazide compound (C-2) per 100 parts by mass of alkali-soluble resin (B) is preferably 10 parts by mass or more, more preferably 20 parts by mass or more. Furthermore, it is preferably 50 parts by mass or less, and more preferably 40 parts by mass or less. By setting the content of the quinone diazide compound within this range, photosensitivity can be obtained without inhibiting liquid repellency.

[0127] In the photosensitive resin composition of the present invention, when the photosensitive agent (C) contains a quinone diazide compound (C-2), it is preferable that the alkali-soluble resin (B) contains a phenol resin and / or a polyhydroxystyrene resin. Alternatively, two or more of these phenol resins and / or polyhydroxystyrene resins may be used in combination. By including a quinone diazide compound (C-2) and a phenol resin and / or polyhydroxystyrene resin, the amount of film loss during the development process can be reduced, which has the effect of making it easier for polysiloxane (A) to remain on the film surface after development, and thus better liquid repellency can be obtained.

[0128] Phenolic resins include novolac phenolic resins and resol phenolic resins, and are obtained by polycondensation of various phenolic compounds, either individually or in mixtures thereof, using aldehyde compounds such as formalin, by known methods.

[0129] Examples of phenol compounds that constitute novolac phenol resin and resol phenol resin include phenol, p-cresol, m-cresol, o-cresol, 2,3-dimethylphenol, 2,4-dimethylphenol, 2,5-dimethylphenol, 2,6-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol, 2,3,4-trimethylphenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, 2,4,5-trimethylphenol, methylenebisphenol, methylenebisp-cresol Examples of aldehyde compounds include resol, resorcinol, catechol, 2-methylresorcinol, 4-methylresorcinol, o-chlorophenol, m-chlorophenol, p-chlorophenol, 2,3-dichlorophenol, m-methoxyphenol, p-methoxyphenol, p-butoxyphenol, o-ethylphenol, m-ethylphenol, p-ethylphenol, 2,3-diethylphenol, 2,5-diethylphenol, p-isopropylphenol, α-naphthol, and β-naphthol, which can be used individually or in mixtures of several. Examples of aldehyde compounds include formalin, paraformaldehyde, acetaldehyde, benzaldehyde, hydroxybenzaldehyde, and chloroacetaldehyde, which can be used individually or in mixtures of several.

[0130] As the polyhydroxystyrene resin, it is also possible to use a homopolymer of vinylphenol or a copolymer with styrene.

[0131] The preferred weight-average molecular weight of phenolic resins and polyhydroxystyrene resins is 2,000 to 20,000, preferably 3,000 to 10,000, calculated as polystyrene equivalent by GPC (gel permeation chromatography). Within this range, a resin composition with high concentration and low viscosity can be obtained.

[0132] In the photosensitive resin composition of the present invention, when the photosensitive agent (C) contains a quinone diazide compound (C-2), from the viewpoint of liquid repellency, it is preferable that the composition contains 20% by mass or more of phenol resin and / or polyhydroxystyrene resin per 100% by mass of alkali-soluble resin (B), more preferably 30% by mass or more. Furthermore, from the viewpoint of outgassing, it is preferable that the content be 50% by mass or less, more preferably 40% by mass or less.

[0133] <Organic solvent (D)> The photosensitive resin composition of the present invention preferably contains an organic solvent (D). Examples of organic solvents (D) include ethers, acetates, esters, ketones, aromatic hydrocarbons, amides, and alcohols.

[0134] More specifically, for example, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-n-butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-propyl ether, diethylene glycol mono-n-butyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol mono-n-propyl ether, propylene glycol mono-n-butyl ether, dipropylene glycol monomethyl ether, dipropylene Dipropylene glycol monoethyl ether, dipropylene glycol mono-n-propyl ether, dipropylene glycol mono-n-butyl ether, dipropylene glycol dimethyl ether, dipropylene glycol methyl-n-butyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, diethylene glycol diethyl ether, or ethers such as tetrahydrofuran, butyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate (hereinafter sometimes referred to as "PGMEA").), 3-methoxybutyl acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, cyclohexanol acetate, propylene glycol diacetate, propylene glycol monoethyl ether acetate, dipropylene glycol methyl ether acetate, 3-methoxy-3-methyl-1-butyl acetate, 1,4-butanediol Acetates such as diacetate, 1,3-butylene glycol diacetate or 1,6-hexanediol diacetate, methyl ethyl ketone, cyclohexanone, 2-heptanone or 3-heptanone, alkyl lactate esters such as methyl 2-hydroxypropionate or ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethoxypropionate Ethyl acetate, ethoxyethyl acetate, hydroxyethyl acetate, methyl 2-hydroxy-3-methylbutanoate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-methyl-3-methoxybutyl propionate, ethyl acetate, n-propyl acetate, i-propyl acetate, n-butyl acetate, i-butyl acetate, n-pentyl formate, i-pentyl acetate, n-butyl propionate, ethyl butyrate, n-propyl butyrate, i-propyl butyrate, n-butyl butyrate, methyl pyruvate, ethyl pyruvate, pyruvate Examples include n-propyl acid, methyl acetoacetate, ethyl acetoacetate, or other esters such as ethyl 2-oxobutanoate; aromatic hydrocarbons such as toluene or xylene; amides such as N-methylpyrrolidone, N,N-dimethylformamide, or N,N-dimethylacetamide; or alcohols such as butyl alcohol, isobutyl alcohol, pentanol, 4-methyl-2-pentanol, 3-methyl-2-butanol, 3-methyl-3-methoxybutanol, or diacetone alcohol.

[0135] The amount of the organic solvent (D) used is not particularly limited as it can be changed depending on the required thickness and the coating method adopted, but it is preferably 100 to 2000 parts by mass, and particularly preferably 150 to 900 parts by mass, per 100 parts by mass of the solid content (other components excluding the organic solvent (D)) of the photosensitive resin composition.

[0136] <Other ingredients> The photosensitive resin composition of the present invention may further contain a thermal crosslinking agent. A thermal crosslinking agent refers to a compound having at least two heat-reactive functional groups in its molecule, including methylol groups, alkoxymethyl groups, epoxy groups, and oxetanyl groups. The thermal crosslinking agent can crosslink the alkali-soluble resin (B) or other components, thereby improving the durability of the cured product.

[0137] Compounds having at least two alkoxymethyl groups or methylol groups can include various known compounds. Preferred examples of such compounds include, for example, HMOM-TPPHBA, HMOM-TPHAP (trade names, manufactured by Honshu Chemical Industry Co., Ltd.), NIKALAC® MX-290, NIKALAC MX-280, NIKALAC MX-270, NIKALAC MX-279, NIKALAC MW-100LM, and NIKALAC MX-750LM (trade names, manufactured by Sanwa Chemical Co., Ltd.), each of which is available from the respective companies.

[0138] Compounds having at least two epoxy groups or oxetanyl groups can include various known compounds. Preferred examples of such compounds include, for example, those having epoxy groups, such as VG3101L (trade name, manufactured by Printec Co., Ltd.), "Tepic" (registered trademark) S, "Tepic" G, "Tepic" P (all trade names, manufactured by Nissan Chemical Industries, Ltd.), "Epiclon" N660, "Epiclon" N695, HP7200 (all trade names, manufactured by Dainippon Ink and Chemicals, Inc.), "Denacol" EX-321L (trade name, manufactured by Nagase ChemteX Corporation), NC6000, EPPN502H, NC3000 (all trade names). Examples of compounds containing an oxetanyl group include OXT-121, OXT-221, OX-SQ-H, OXT-191, PNOX-1009, RSOX (all trade names, manufactured by Toagosei Co., Ltd.), "Etanacol" (registered trademark) OXBP, and "Etanacol" OXTP (both trade names, manufactured by Ube Industries, Ltd.), all of which are available from their respective companies.

[0139] Preferably, the thermal crosslinking agent has a phenolic hydroxyl group in one molecule, and has a methylol group and / or alkoxymethyl group at both ortho positions of the phenolic hydroxyl group. The presence of the methylol group and / or alkoxymethyl group adjacent to the phenolic hydroxyl group can further enhance the durability of the cured product. Examples of alkoxymethyl groups include, but are not limited to, methoxymethyl, ethoxymethyl, propoxymethyl, and butoxymethyl groups.

[0140] The content of the thermal crosslinking agent is preferably 5 parts by mass or more, more preferably 10 parts by mass or more, and even more preferably 15 parts by mass or more, per 100 parts by mass of the total amount of alkali-soluble resin (B). Furthermore, it is preferably 50 parts by mass or less, more preferably 40 parts by mass or less, and even more preferably 30 parts by mass or less. By setting the content of the thermal crosslinking agent to 5 parts by mass or more, the heat resistance of the cured product is improved, and by setting it to 50 parts by mass or less, a decrease in the elongation of the cured product can be prevented.

[0141] <Method for producing a photosensitive resin composition> A method for producing the photosensitive resin composition of the present invention will now be described. For example, it can be obtained by dissolving the polysiloxane (A) to the photosensitive agent (C) and other components in an organic solvent (D). Dissolution methods include stirring and heating. When heating, the heating temperature is preferably set within a range that does not impair the performance of the resin composition, and is usually 20°C to 80°C. Furthermore, the order in which each component is dissolved is not particularly limited; for example, compounds with low solubility can be dissolved sequentially.

[0142] The resulting photosensitive resin composition is preferably filtered using a filtration filter to remove dirt and particles. The pore size of the filter can be, for example, 1 μm, 0.5 μm, 0.2 μm, 0.1 μm, or 0.05 μm, but is not limited to these. The material of the filtration filter can be polypropylene (PP), polyethylene (PE), nylon (NY), or polytetrafluoroethylene (PTFE), but it is preferable to use polyethylene or nylon for filtration.

[0143] <Cured product> The cured product of the present invention is obtained by curing the photosensitive resin composition of the present invention. Examples of curing methods include heat treatment of a photosensitive resin composition applied to a substrate. Examples of methods for applying the photosensitive resin composition to a substrate include spin coating, slit coating, dip coating, spray coating, and printing. Heat treatment after application removes residual solvents and components with low heat resistance, thereby improving the heat resistance and chemical resistance of the cured product. Furthermore, by including a crosslinking agent, a thermal crosslinking reaction can be promoted by the heat treatment, further improving the heat resistance and chemical resistance of the cured product. This heat treatment may be performed by selecting a temperature and gradually increasing it, or by selecting a temperature range and continuously increasing the temperature for 5 minutes to 5 hours. One example is a heat treatment at 150°C and 250°C for 30 minutes each. Alternatively, a linear heating method from room temperature to 300°C over 2 hours is also possible. In the present invention, the heat treatment conditions are preferably 180°C or higher, more preferably 200°C or higher, and even more preferably 230°C or higher. Furthermore, the heat treatment conditions are preferably 400°C or lower, more preferably 350°C or lower, and even more preferably 300°C or lower.

[0144] The cured product of the present invention can be used in electronic components such as organic EL displays, liquid crystal displays, semiconductor devices, and multilayer wiring boards. Specifically, it is suitably used in applications such as partitions for organic EL elements, planarization layers for substrates with drive circuits of displays using organic EL elements, color filters for liquid crystal devices, black matrices for liquid crystal devices, interlayer insulating films between rewirings of semiconductor devices or semiconductor components, passivation films for semiconductors, surface protective films for semiconductor elements, interlayer insulating films for multilayer wiring for high-density mounting, wiring protection insulating layers for circuit boards, on-chip microlenses for solid-state image sensors, and planarization layers for various displays and solid-state image sensors. Examples of electronic devices having a surface protective film or interlayer insulating film on which the cured product of the present invention is arranged include MRAMs with low heat resistance. In other words, the cured product of the present invention is suitable for use as a surface protective film for MRAMs. It can also be suitably used as partitions or insulating layers for displays such as LCDs and organic EL displays. More preferably, it can be suitably used as partitions for displays in which a functional layer is formed by inkjet application of functional ink within a region (pixel) surrounded by partitions formed on a substrate.

[0145] The cured product of the present invention has good liquid repellency, which prevents ink used in inkjet methods from penetrating into adjacent pixels, thereby enabling the production of a display device with fewer display defects. On the other hand, the sides of the cured product and the parts without curing (openings) do not have liquid repellency, thus providing good ink coating properties. Furthermore, because the cured product of the present invention has a low outgassing rate at high temperatures, it can be suitably used in organic EL display devices that include at least one selected from the group consisting of organic EL light-emitting materials, hole injection materials, and hole transport materials in the functional layer.

[0146] <Laminate> The laminate of the present invention is constructed by laminating a patterned first electrode and a cured product of the present invention on a substrate in that order, with at least a portion of the cured product on the first electrode being open. Because the surface of the cured product has good liquid-repellent properties, it can be suitably used in a display device in which a functional layer is formed by inkjet application of a functional ink to the area on the first electrode where at least a portion of the cured product is open. Furthermore, because the laminate of the present invention has a low amount of outgassing of the cured product at high temperatures, it can be suitably used in an organic EL display device in which the functional layer contains at least one selected from the group consisting of organic EL light-emitting materials, hole injection materials, and hole transport materials.

[0147] It is preferable that the laminate of the present invention satisfies characteristic (v) and characteristic (vi) when the cured product is analyzed by X-ray photoelectron spectroscopy (XPS). (v) The concentration of F atoms measured from the surface of the cured product opposite to the surface in contact with the first electrode is 8.1 atom% or more and 30.0 atom% or less, and the concentration of Si atoms is 1.0 atom% or more and 6.0 atom% or less. (vi) The concentration of F atoms in the cured material measured perpendicular to the interface where the first electrode and the cured material are in contact, and in the direction from the substrate to the cured material, and within the range of 100 to 200 nm starting from the interface where the first electrode and the cured material are in contact, is 0.1 atom% or more and 8.0 atom% or less.

[0148] Figure 2 shows a schematic cross-sectional view of an example of the laminate of the present invention. A planarization layer 9, a patterned first electrode 10, and a cured product 11 of the present invention are laminated on a substrate 8 in that order, with at least a portion of the cured product 11 on the patterned first electrode 10 being open. The properties (v) of the cured product by X-ray photoelectron spectroscopy (XPS) analysis are measured from the surface 12 opposite to the surface in contact with the first electrode and the cured product. It is preferable to measure within a range of 100 μm from the edge of the opening of the cured product 11. Furthermore, characteristic (vi) is measured perpendicular to the interface 13 where the first electrode and the cured product are in contact, and in the direction from the substrate to the cured product, and in a range of 100 nm 15 to another 100 nm starting from the interface where the first electrode and the cured product are in contact, that is, perpendicular to the interface 13 where the first electrode and the cured product are in contact, and in the direction from the substrate to the cured product, and in any of the ranges 14 from 100 nm to 200 nm starting from the interface where the first electrode and the cured product are in contact. In the opening of the patterned first electrode, assuming that the first electrode exists perpendicular to the interface where the first electrode and the cured product are in contact, and in the direction from the substrate to the cured product, and in the ranges 14 from 100 nm to 200 nm starting from the interface where the first electrode and the cured product are in contact, as shown in Figure 2, the measurement is taken in any of the ranges 100 nm to 200 nm from the height of the first electrode. Furthermore, if there is variation in the thickness of the first electrode, it shall be assumed that the first electrode has an average thickness at the opening edge of the patterned first electrode.

[0149] As a method for the laminate of the present invention to satisfy characteristic (v), for example, a method of forming a cured product with a photosensitive resin composition containing a compound (a-1) having a fluorinated alkyl group with 7 to 21 fluorines and 5 to 12 carbon atoms, and a compound (a-2) having a siloxane structure. A siloxane structure refers to a structure in which silicon (Si) and oxygen (O) are alternately bonded. The present invention may contain two types of compounds: a compound (a-1) having a fluorinated alkyl group with 7 to 21 fluorines and 5 to 12 carbon atoms, and a compound (a-2) having a siloxane structure. Alternatively, as with the polysiloxane (A) described above, a single compound may have both a fluorinated alkyl group with 7 to 21 fluorines and 5 to 12 carbon atoms and a siloxane structure.

[0150] One method for adjusting the concentration of the F atom in characteristic (v) to the above range is to adjust the content of compound (a-1) having a fluoride alkyl group with 7 to 21 fluorines and 5 to 12 carbon atoms in the photosensitive resin composition. Increasing the content can increase the concentration of the F atom in characteristic (v), and decreasing the content can decrease the concentration of the F atom in characteristic (v). Another method is to adjust the concentration of the fluoride alkyl group in compound (a-1). Increasing the concentration of the fluoride alkyl group can increase the concentration of the F atom in characteristic (v), and decreasing the concentration of the fluoride alkyl group can decrease the concentration of the F atom in characteristic (v).

[0151] One method for adjusting the concentration of Si atoms in characteristic (v) to the above range is to adjust the content of compound (a-2) having a siloxane structure in the photosensitive resin composition. Increasing the content increases the concentration of Si atoms in characteristic (v), and decreasing the content decreases the concentration of Si atoms in characteristic (v). Another method is to adjust the concentration of the siloxane structure in compound (a-2). Increasing the concentration of the siloxane structure increases the concentration of Si atoms in characteristic (v), and decreasing the concentration of the siloxane structure decreases the concentration of Si atoms in characteristic (v).

[0152] The structure of compound (a-1) having 7 to 21 fluorine atoms and 5 to 12 carbon atoms in a fluorinated alkyl group is not particularly limited. Examples include acrylic resins copolymerized from one or more selected from the group consisting of 2-(perfluorobutyl)ethyl (meth)acrylate, 2-(perfluorohexyl)ethyl (meth)acrylate, and 2-(perfluorooctyl)ethyl (meth)acrylate, and the aforementioned polysiloxane (A). From the viewpoint of UV ozone resistance, the aforementioned polysiloxane (A) is preferred.

[0153] The structure of the compound (a-2) having a siloxane structure is not particularly limited. Examples include alkyl-modified silicone, polyether-modified silicone, and the aforementioned polysiloxane (A). From the viewpoint of uneven distribution on the cured surface, polyether-modified silicone and the aforementioned polysiloxane (A) are preferred. Furthermore, from the viewpoint of liquid repellency, the aforementioned polysiloxane (A) is more preferred.

[0154] Examples of commercially available polyether-modified silicones include KF-351A, KF-352A, KF-353, KF-354L, KF-355A, KF-642 (manufactured by Shin-Etsu Chemical Co., Ltd.), SH8400, SH8700, SF8410 (manufactured by Toray Dow Corning Co., Ltd.), and BYK-300, BYK-306, BYK-307, BYK-320, BYK-325, and BYK-330 (manufactured by Bic Chemie).

[0155] One method for forming a laminate of the present invention that satisfies characteristic (vi) is to form a cured product using a photosensitive resin composition containing an alkali-soluble resin (b-1) having trifluoromethyl groups. The trifluoromethyl groups have little tendency to be unevenly distributed on the surface of the cured product, and F atoms can be retained inside the cured product. Furthermore, since the trifluoromethyl groups do not impart liquid repellency, a cured product with a hydrophilic surface can be formed by "half exposure" as described later.

[0156] One method for adjusting the concentration of the F atom in property (vi) to the above range is to adjust the content of the alkali-soluble resin (b-1) having trifluoromethyl groups in the photosensitive resin composition. Increasing the content can increase the concentration of the F atom in property (vi), and decreasing the content can decrease the concentration of the F atom in property (vi). Another method is to adjust the concentration of the trifluoromethyl groups in the alkali-soluble resin (b-1). Increasing the concentration of trifluoromethyl groups can increase the concentration of the F atom in property (vi), and decreasing the concentration of trifluoromethyl groups can decrease the concentration of the F atom in property (vi). The alkali-soluble resin (b-1) having trifluoromethyl groups is not limited in terms of the main chain skeleton and side chain types of the polymer constituting the resin. Examples include, but are not limited to, polyimide resins, polybenzoxazole resins, polyamideimide resins, acrylic resins, novolac resins, polyhydroxystyrene resins, phenolic resins, and polysiloxane resins. From the viewpoint of heat resistance, the alkali-soluble resin (b-1) having a trifluoromethyl group preferably contains one or more selected from the group consisting of polyimide, polybenzoxazole, polyamideimide, precursors of any of these, and copolymers thereof. Because these alkali-soluble resins have high heat resistance, when used in a display device, the amount of outgassing at high temperatures of 200°C or higher after heat treatment is reduced, thereby improving the durability of the display device.

[0157] This section explains the analysis of hardened materials using X-ray photoelectron spectroscopy (XPS).

[0158] The characteristic (v) is measured from the surface of the cured material opposite to the surface where the first electrode and the cured material are in contact. Preferably, the measurement is taken within a range of 100 μm from the edge of the opening in the cured material. By measuring within this range, the liquid repellency of the cured material surface to functional inks can be analyzed.

[0159] In the laminate of the present invention, the concentration of F atoms in property (v) is preferably 8.1 atom% to 30.0 atom%. More preferably, it is 15.0 atom% to 26 atom%. A concentration of F atoms of 8.1 atom% or more can impart liquid repellency to the surface of the cured product. On the other hand, a concentration of F atoms of 30 atom% or less suppresses the aggregation of F atoms, making it possible to obtain a cured product with fewer defects.

[0160] Furthermore, in the laminate of the present invention, the concentration of Si atoms in property (v) is preferably 1.0 atom% to 6.0 atom%. More preferably, it is 1.5 atom% to 4.5 atom%. A Si atom concentration of 1.0 atom% or more improves the UV-ozone resistance of the cured product, and good liquid repellency can be obtained even after UV-ozone treatment. In addition, since the polysiloxane skeleton exhibits good heat resistance, it does not decompose in the curing process, preventing the scattering of liquid-repellent components to the openings and improving the wettability of the functional ink applied to the openings. On the other hand, a Si atom concentration of 6.0 atom% or less suppresses the aggregation of Si atoms, and a cured product with fewer defects can be obtained.

[0161] Characteristic (v) is preferably analyzed using an XPS instrument with a detector tilt of 45° relative to the sample surface. A 45° detector tilt allows for the analysis of regions near the surface with high polysiloxane (A) concentrations.

[0162] The characteristic (vi) is measured perpendicular to the interface between the first electrode and the cured material, and in the direction from the substrate to the cured material, within a range of 100 to 200 nm, starting from the interface between the first electrode and the cured material. If the thickness of the cured material is 200 nm or less, the measurement is taken at the median of the cured material's thickness. The presence of an F component within the cured material reduces its water absorption, thereby suppressing electrode corrosion and improving the durability of the display device.

[0163] In the laminate of the present invention, the concentration of F atoms is preferably 0.1 atom% to 8.0 atom% in property (vi). More preferably, it is 4.0 atom% to 7.5 atom%. A concentration of F atoms of 0.1 atom% or more reduces the water absorption of the cured product, thereby improving the durability of the display device. On the other hand, a concentration of F atoms of 8.0 atom% or less allows for both the durability of the display device and good mechanical properties of the cured product.

[0164] The characteristic (vi) is preferably measured by X-ray photoelectron spectroscopy (XPS) after excavating the cured material with Ar gas cluster ions (Ar-GCIB), exposing a range of 100 to 200 nm perpendicular to the interface between the first electrode and the cured material, and in the direction from the substrate to the cured material.

[0165] Next, a method for forming a cured product in which at least a portion of the first electrode is open will be described for the laminate of the present invention.

[0166] A cured product is obtained by applying the photosensitive resin composition of the present invention onto a substrate having a first electrode and drying it. Furthermore, by performing the following steps (1) to (4) in this order, a cured product can be formed in which at least a portion of the first electrode is open. (1) A step of applying a photosensitive resin composition onto a substrate having a first electrode to form a photosensitive resin dried product. (2) Exposing the photosensitive resin dried product to light (3) Process of developing the exposed photosensitive resin dry product (4) A process of forming a cured product by heat treatment of the developed photosensitive resin dried product. First, we will explain the process of (1) applying a photosensitive resin composition to a substrate having a first electrode to form a photosensitive resin dried product.

[0167] Methods for coating a photosensitive resin composition onto a substrate having a first electrode include spin coating, slit coating, dip coating, spray coating, and printing. Prior to coating, the substrate to be coated with the photosensitive resin composition may be pre-treated with the adhesion improver described above. For example, a method of treating the substrate surface is used in which the adhesion improver is dissolved in a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, or diethyl adipate at a concentration of 0.5 to 20% by mass. Methods for treating the substrate surface include spin coating, slit die coating, bar coating, dip coating, spray coating, and steam treatment.

[0168] Next, for example, the coated photosensitive resin can be subjected to vacuum drying as needed, and then a dried photosensitive resin can be obtained by heat treatment using a hot plate, oven, infrared, etc., at a temperature of 50°C to 180°C for 1 minute to several hours.

[0169] Next, (2) the process of exposing the photosensitive resin dried product to light will be described.

[0170] A chemical beam is irradiated onto a photosensitive resin dry product through a photomask having a desired pattern. Chemical beams used for exposure include ultraviolet light, visible light, electron beams, and X-rays, but in this invention, it is preferable to use the i-line (365 nm), h-line (405 nm), and g-line (436 nm) of a mercury lamp. After irradiation with the chemical beam, post-exposure baking may be performed. Post-exposure baking can be expected to improve resolution after development or increase the tolerance range of development conditions. Post-exposure baking can be performed using an oven, hot plate, infrared light, flash annealing device, or laser annealing device. The post-exposure baking temperature is preferably 50 to 180°C, more preferably 60 to 150°C. The post-exposure baking time is preferably 10 seconds to several hours. When the post-exposure baking time is within the above range, the reaction proceeds well, and the development time may be shortened. At this time, a grid-shaped photomask can be used to obtain a grid-shaped cured product.

[0171] In this invention, "half exposure" may be used. "Half exposure" refers to a process that ensures that a certain amount of the underlying layer of the photosensitive resin dry material remains exposed when development is complete. In other words, it refers to a process that exposes the material so that the lower layer of the photosensitive resin dry material is not exposed to light. For example, when forming the cured product shown in Figure 3 using a positive-type photosensitive resin dry material, the area that will become the first stage 16 of the thicker cured product is left unexposed, and the area that will become the second stage 17 of the thinner cured product is exposed to "half exposure" using a chemical dose that does not expose the lower layer of the photosensitive resin dry material to light, and then the product is formed by developing and heat-treating. Furthermore, the thickness of the photosensitive resin dry material remaining after development is complete can be adjusted by adjusting the chemical dose irradiated onto the photosensitive resin dry material. Specifically, if the photosensitive resin dry material is of the positive type, increasing the chemical dose will reduce the thickness of the photosensitive resin dry material remaining after development is complete. On the other hand, if the photosensitive resin dry product is of the negative type, increasing the chemical dose will increase the thickness of the photosensitive resin dry product remaining after development is complete. The chemical dose may be adjusted by irradiating the product with chemical rays through a photomask having two or more areas with different transmittances.

[0172] When the photosensitive resin dried product formed from the photosensitive resin composition of the present invention is of the positive type, the surface of the cured product formed by half-exposure does not exhibit liquid repellency and can have good ink coating properties. In other words, both a cured product with a liquid-repellent surface and a cured product with a hydrophilic surface can be formed in a single photolithography.

[0173] Next, we will explain the process of developing (3) the photosensitive resin that has been exposed to light.

[0174] In the developing process for developing the exposed photosensitive resin dry product, the exposed photosensitive resin dry product is developed using a developer solution to remove areas other than the exposed parts. Preferred developers are aqueous solutions of alkaline compounds such as tetramethylammonium hydroxide (TMAH), diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine. In some cases, polar solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, and dimethylacrylamide, alcohols such as methanol, ethanol, and isopropanol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, and ketones such as cyclopentanone, cyclohexanone, isobutyl ketone, and methyl isobutyl ketone may be added to these alkaline aqueous solutions, either individually or in combination. Possible development methods include spraying, paddle development, immersion, and ultrasonic development.

[0175] Next, it is preferable to rinse the pattern formed by development with distilled water. Here, too, alcohols such as ethanol and isopropyl alcohol, or esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to the distilled water for rinsing.

[0176] Next, we will explain the process of forming a cured product by heat-treating the developed photosensitive resin dried product.

[0177] A cured product is obtained by a heat treatment process of the developed and dried photosensitive resin. Heat treatment removes residual solvents and components with low heat resistance, thereby improving heat resistance and chemical resistance. Furthermore, by including a crosslinking agent, the heat treatment promotes a thermal crosslinking reaction, further improving heat resistance and chemical resistance. This heat treatment is performed by selecting a temperature and gradually increasing it, or by selecting a temperature range and continuously increasing the temperature for 5 minutes to 5 hours. One example is a heat treatment at 150°C and 250°C for 30 minutes each. Alternatively, a linear heating method from room temperature to 300°C over 2 hours is also possible. In this invention, the heat treatment conditions are preferably 180°C or higher, more preferably 200°C or higher, and even more preferably 230°C or higher. Furthermore, the heat treatment conditions are preferably 400°C or lower, more preferably 350°C or lower, and even more preferably 300°C or lower.

[0178] In the laminate of the present invention, the thickness of the cured material is preferably 0.5 to 10 μm, starting from the interface where the first electrode and the cured material are in contact. If the thickness is 0.5 μm or more, the functional ink can be easily retained within the pixels. From the viewpoint of facilitating the processing of the photosensitive resin composition by photolithography, the thickness of the partition wall is preferably 10 μm or less.

[0179] The substrate used in the laminate of the present invention can be appropriately selected from materials such as metal, glass, or resin film, which are suitable for supporting the display device and transporting it in subsequent processes. If a glass substrate is used, soda-lime glass or alkali-free glass can be used, and the thickness should be sufficient to maintain mechanical strength. Regarding the glass material, alkali-free glass is preferred because it is better to have fewer ions eluted from the glass, but soda-lime glass coated with a barrier coating such as SiO2 is also commercially available and can be used. If a resin film is used, it is preferable to include a resin material selected from polyimide, polyamide, polybenzoxazole, polyamideimide, and poly(p-xylylene), and these resin materials may be included individually or in combination. For example, when forming with polyimide resin, it can also be formed by coating a support substrate with a solution containing polyamic acid (including polyamic acid that is partially imidized), which is a precursor of polyimide, or soluble polyimide, and firing it.

[0180] The first electrode used in the laminate of the present invention preferably contains ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), Ag, Al, etc.

[0181] The patterning of the first electrode of the laminate of the present invention can be carried out by known methods. For example, one method involves forming the first electrode over the entire surface of the substrate by sputtering, then masking an arbitrary area with photoresist, and finally etching the openings.

[0182] When the laminate of the present invention is used in a display device, a planarization layer may be further laminated between the substrate and the patterned first electrode. Often, a TFT (thin-film transistor) and wiring located on the side of the TFT and connected to the TFT are provided on a substrate such as glass. If the first electrode follows the irregularities of the wiring, appearance defects such as uneven light emission will occur. Therefore, a planarization layer is formed on the drive circuit so as to cover the irregularities, and the first electrode is further provided on the planarization layer. The planarization layer preferably contains a resin material selected from polyimide, polyamide, polybenzoxazole, polyamideimide, acrylic, cardo, and poly(p-xylylene), and may contain one of these resin materials or a combination of several types. <Display device> The display device of the present invention comprises a cured product of the present invention or a laminate of the present invention. Specific examples of the display device include LCDs and organic EL displays.

[0183] The display device of the present invention preferably has a structure in which a functional layer is formed within a region surrounded by partitions, and at least a part of the partitions is the cured product of the present invention. Since the cured product of the present invention has high liquid repellency on its upper surface, it is preferable to form the functional layer using an inkjet method. By preventing the ink used in the inkjet method from penetrating into adjacent pixels through the partitions made of the cured product of the present invention, a display device with fewer display defects can be obtained. Furthermore, the yield of the display device can be increased because the openings between the partitions have good wettability to the ink. For example, by forming a colored layer that colors transmitted light and arranging multiple colored layers having different colors for each pixel, it can be suitably used as a color filter. Furthermore, by including quantum dots (QDs) in the colored layer, it can be suitably used as a QD color filter.

[0184] The display device of the present invention preferably comprises a laminate of the present invention. Specifically, it is preferable that the laminate comprises a first electrode patterned on a substrate and a cured product of the present invention in that order, with at least a portion of the cured product on the first electrode being open, and a functional layer being formed in the opening of the cured product. Since the cured product of the present invention has high liquid repellency on its upper surface, it is preferable to form the functional layer by an inkjet method. The cured product of the present invention prevents ink used in the inkjet method from penetrating into adjacent pixels, thereby providing a display device with fewer display defects. Furthermore, the good wettability of the openings between partitions to ink can increase the yield of the display device. For example, by forming an organic EL light-emitting layer containing at least one selected from organic EL light-emitting material, hole injection material, and hole transport material as the functional layer, and then forming a second electrode on the functional layer, it can be suitably used as an organic EL display device.

[0185] Because the cured material of the display device of the present invention exhibits low outgassing at high temperatures, it is preferable to use it in an organic EL display device that includes at least one material selected from the group consisting of organic EL light-emitting material, hole injection material, and hole transport material in its functional layer. This makes it possible to obtain an organic EL display device with minimal pixel shrinkage and excellent durability.

[0186] When the display device of the present invention is an organic EL display device, the organic EL display device has a drive circuit, a planarization layer, a first electrode, a partition wall, an organic EL light-emitting layer, and a second electrode on a substrate, and it is preferable that the partition wall is made of the cured product of the present invention. Taking an active matrix type display device as an example, it has a TFT and wiring located on the side of the TFT and connected to the TFT on a substrate such as glass or a resin film, a planarization layer covering the irregularities thereon, and a display element further provided on the planarization layer. The display element and the wiring are connected via contact holes formed in the planarization layer.

[0187] <Method for manufacturing a display device> Next, the manufacturing method of the present invention's display device will be described. The method for manufacturing the display device of the present invention comprises steps (5) and (6) in this order. (5) A laminate in which a first electrode and a cured product of the present invention are laminated on a substrate in that order, and at least a portion of the cured product on the first electrode is open, or in a laminate of the present invention, A process of forming a functional layer by applying a functional ink onto the first electrode using an inkjet printer. (6) A step of forming a second electrode on the functional layer.

[0188] (5) In step (5), a functional ink is applied to the first electrode of the laminate described above by inkjet to form a functional layer. For example, in the case of an organic EL display device, an organic EL light-emitting layer can be formed by dropping a composition containing at least one selected from the group consisting of organic EL light-emitting material, hole injection material, and hole transport material into the pixels as a functional ink and drying it. For drying, it is preferable to heat it at 150°C to 250°C for 0.5 to 120 minutes using a hot plate or oven.

[0189] (6) In step (6), a second electrode is formed on the functional layer. It is preferable that the second electrode is formed so as to cover the entire partition wall and the functional layer. Methods for forming the second electrode include sputtering and vapor deposition. It is preferable that the second electrode is formed with no breaks in the wire and with a uniform layer thickness. [Examples]

[0190] The present invention will be described below with reference to examples, but the present invention is not limited to these examples. First, the measurement method and evaluation method will be described.

[0191] (1) Average molecular weight measurement The molecular weights of polysiloxanes P-1 to P-29 synthesized in Synthesis Examples 1 to 28, the acrylic liquid repellent (Ac-1) synthesized in Synthesis Example 31, and the phenolic resin (d1) synthesized in Synthesis Example 38 were measured using a GPC (gel permeation chromatography) instrument (Waters 2690-996; Waters Japan Ltd.) with tetrahydrofuran as the developing solvent, and the weight-average molecular weight (Mw) was calculated in polystyrene equivalent.

[0192] Furthermore, the molecular weights of the alkali-soluble resins (b1) to (b4) synthesized in synthesis examples 33 to 36 were measured using the GPC apparatus described above, with N-methyl-2-pyrrolidone (hereinafter referred to as NMP) as the developing solvent, and the number-average molecular weight (Mn) was calculated in terms of polystyrene.

[0193] (2) Evaluation of compatibility A photosensitive resin composition was coated onto a 4-inch silicon wafer to a thickness of 2 μm after pre-baking. Then, a substrate with a dried photosensitive resin was obtained by pre-baking at 90°C for 2 minutes using a hot plate.

[0194] The resulting photosensitive resin-coated substrates were subjected to defect inspection using Topcon's WM-10 wafer surface inspection system. The WM-10 uses standard polystyrene latex spheres of varying particle sizes to calibrate the signal amplitude and particle size associated with particle detection. The number of defects larger than 0.5 μm, calculated using standard polystyrene latex spheres with a particle size of 0.5 μm, was judged as follows, with A being excellent, B good, C acceptable, and D unacceptable. A: 10 or less B: 11 or more and 20 or less C: 21 to 30 pieces D: 31 or more (3) Evaluation of liquid repellency To measure the contact angle, 3 μL of PGMEA was dropped onto the partition pattern 4 shown in Figure 1, which was formed on the substrate using the method described later, and the contact angle was measured. The measurement was performed using a contact angle measuring device (DMs-401; manufactured by Kyowa Interface Science Co., Ltd.) in accordance with JIS-R3257:1999, by the static drop method at 23°C.

[0195] The measurement results of the PGMEA contact angle on the cured material were judged as follows, with A being excellent, B good, C acceptable, and D unacceptable. A: Contact angle of 45° or more B: Contact angle between 35° and less than 45° C: Contact angle between 25° and less than 35° D: Contact angle is less than 25°.

[0196] (4) Evaluation of ink wettability of openings Using an inkjet device (Litlex142; manufactured by ULVAC, Inc.), an ink (7% by mass) of a compound (HT-1) with methyl benzoate as the solvent was dropped into the region (opening) surrounded by the partition wall pattern 5 on the substrate, as shown in Figure 1 (described later). The wetting spread of the ink in the opening was observed. The number of ink droplets required to wet the entire opening was counted. The volume of each drop of ink used in this evaluation was 8 pl. The ink wettability of the opening was judged according to the following criteria: Excellent if the ink spreads across the entire opening with 2 drops or less of ink (A+), or if the ink spreads across the entire opening with 3 to 4 drops of ink (A); Good if the ink spreads across the entire opening with 5 to 6 drops of ink (B); Acceptable if the ink spreads across the entire opening with 7 to 8 drops of ink (C); and Unacceptable if the ink spreads across the entire opening with 9 or more drops of ink (D), or if ink bleeding outside the pixel is observed (E).

[0197] [ka]

[0198] (5) Evaluation of UV ozone resistance The substrates whose liquid repellency was evaluated as described in (3) above were subjected to UV ozone treatment under the following conditions. Subsequently, 3 μL of PGMEA was dropped onto the partition pattern 4 in Figure 1 and the contact angle was measured. For the measurement, a contact angle measuring device (DMs-401; manufactured by Kyowa Interface Science Co., Ltd.) was used, and the measurement was performed by the static drop method at 23°C in accordance with JIS-R3257.

[0199] Compared with the evaluation result of (3) liquid repellency described above, if the change in contact angle is 10% or less, it is rated A (pass), and if the change in contact angle is 10% or more, it is rated B (fail).

[0200] ·UV ozone conditions Apparatus: PL16 (manufactured by SEN LIGHTS Corp.) Illuminance: 15mW / cm 2 Irradiation distance: 75mm Irradiation time: 120sec (6) Analysis of cured products by X-ray photoelectron spectroscopy (XPS) A method for analyzing a cured product by X-ray photoelectron spectroscopy (XPS) is described.

[0201] <Preparation of Cured Product for X-ray Photoelectron Spectroscopy (XPS) Analysis> A laminate having the partition pattern 4 shown in FIG. 1 formed by the method described later was prepared, and XPS analysis was performed at any location within a range of 100 µm from the edge of the opening of the cured product in the partition pattern 4.

[0202] <Measurement Method for Characteristic (v) by X-ray Photoelectron Spectroscopy (XPS) Analysis> Surface analysis of the cured product was performed by X-ray photoelectron spectroscopy (XPS). Measurement conditions and data processing conditions are described below.

[0203] ·Measurement conditions Apparatus: Quantera SXM (manufactured by PHI) Excitation X-ray: monochromatic Al Kα₁,₂ line (1486.6 eV) X-ray diameter: 200μm Photoelectron detection angle: 45° (tilt of the detector relative to the sample surface) ·Data processing conditions Smoothing: 9-point smoothing Horizontal axis correction: the main peak of C1s (CHx, C-C, C=C) was set to 284.6 eV.

[0204] <Measurement Method for Characteristic (vi) by X-ray Photoelectron Spectroscopy (XPS) Analysis> Ar gas cluster ion (Ar-GCIB) was applied to the partition pattern 4 in Figure 1, perpendicular to the interface where the first electrode 2 and the partition pattern 4 meet, and in the direction from the alkali-free glass substrate 1 towards the partition pattern 4, so that a range of 100 to 200 nm was exposed starting from the interface. Subsequently, X-ray photoelectron spectroscopy (XPS) analysis was performed at the Ar-GCIB application site. The measurement conditions and data processing are described below.

[0205] • Measurement conditions Device: K-Alpha (manufactured by Thermo Fisher Scientific) Excitation X-rays: monochromatic Al K 1,2 lines (1486.6 eV) X-ray diameter 400 μm Photoelectron escape angle: 90° (detector tilt relative to the sample surface) Ion etching conditions: Ar gas cluster ions (Ar-GCIB) Etching rate: 3.5 nm / min • Data processing 11-point smoothing The horizontal axis correction was applied to the C1s main peak (CHx, CC) at 284.6 eV. (7) Durability evaluation A substrate on which the below-described partition wall pattern 5 using a cured product of a photosensitive resin composition was formed was subjected to UV ozone treatment under the aforementioned conditions for evaluating UV ozone resistance. Thereafter, as a hole injection layer, an ink of a compound (HT-1) using methyl benzoate as a solvent was dropped into a region surrounded by the partition walls using an inkjet apparatus (Litlex142 manufactured by ULVAC, Inc.), followed by baking at 200°C to form a hole injection layer. Next, as a hole transport layer, a compound (HT-2) using 4-methoxytoluene as a solvent was dropped into a region surrounded by the partition walls using an inkjet apparatus, followed by baking at 190°C to form a hole transport layer. Further, as a light-emitting layer, a mixture of a compound (GH-1) and a compound (GD-1) using 4-methoxytoluene as a solvent was dropped into a region surrounded by the partition walls using an inkjet apparatus, followed by baking at 130°C to form a light-emitting layer. Thereafter, as an electron transport material, a compound (ET-1) and a compound (LiQ) were sequentially laminated by a vacuum vapor deposition method at a volume ratio of 1:1 to form an organic EL layer 6. Next, after depositing the compound (LiQ) to a thickness of 2 nm, Mg and Ag were deposited to a thickness of 10 nm at a volume ratio of 10:1 to form a second electrode 7. Finally, sealing was performed by adhering a cap-shaped glass plate using an epoxy resin adhesive under a low-humidity nitrogen atmosphere, to prepare 5 mm square organic EL display devices on one substrate.

[0206]

Chemical Formula

[0207] The organic EL display device produced by the above method was driven at 10 mA / cm 2 by direct current to emit light, and the initial light-emitting area was observed. Further, after holding at 80°C for 500 hours, the device was again driven at 10 mA / cm 2 by direct current to emit light, it was checked whether there was any change in the light-emitting area, and durability was judged as follows: A was excellent, B was good, C was acceptable, D was unacceptable, and A, B, and C were regarded as passed. A: No change in light-emitting area B: Light-emitting area changed to 90% to 99% of the original C: Light-emitting area changed to 80% to 89% of the original D: Light-emitting area changed to 79% or less of the original The abbreviations for the components used in the examples are shown below.

[0208] <Alkoxysilyl> MTMS: Methyltrimethoxysilane HfTES: 4-(2-hydroxy-1,1,1,3,3,3-hexafluoroisopropyl)-1-triethoxysilylbenzene PhTMS: Phenylentrimethoxysilane DPhDMS: Dimethoxydiphenylsilane NapTMS: 1-Naphthyltrimethoxysilane TMSSucA:3-Trimethoxysilylpropyl succinic anhydride TfTMS: Tridecafluorooctyltrimethoxysilane NfTMS: Nonafluorohexyltrimethoxysilane CfTMS: Trifluoromethylpropyltrimethoxysilane TEOS: Tetraethoxysilane <Crosslinking agent> HMOM-TPHAP: (The compound shown in the chemical formula below, manufactured by Honshu Chemical Industry Co., Ltd.)

[0209] [ka]

[0210] VG3101L: "Tecmore" (registered trademark) VG3101L (compound shown in the chemical formula below, manufactured by Printec Co., Ltd.).

[0211] [ka]

[0212] <organic solvents> PGMEA: Propylene glycol monomethyl ether acetate PGME: Propylene glycol monomethyl ether MAK:2-heptanone IPA: Isopropyl alcohol The compounds used in Examples and Comparative Examples are shown below.

[0213] Synthesis Example 1 Synthesis of polysiloxane (P-1) 8.20 g (0.05 mol) of TfTMS, 43.46 g (0.50 mol) of NapTMS, 9.18 g (0.10 mol) of TMSSucA, 16.68 g (0.35 mol) of MTMS, 72.90 g of MAK, and 8.10 g of IPA were charged into a 500 mL three-necked flask. While stirring at 40°C, a phosphoric acid solution obtained by mixing 19.53 g of water, 0.76 g of phosphoric acid (1.0 mass% relative to the charged monomers), and 2.70 g of IPA was added. Thereafter, the flask was immersed in an oil bath at 70°C and stirred for 60 minutes, and then the temperature of the oil bath was raised to 130°C over 15 minutes. 10 minutes after the start of temperature increase, the internal temperature of the solution reached 100°C, and the solution was heated and stirred for 1 hour (internal temperature: 100 to 125°C), thereby obtaining polysiloxane (P-1). During temperature increase and heating stirring, nitrogen was flowed at a rate of 0.07 L (liter) / minute. The weight-average molecular weight was determined using GPC, and the result was 3000.

[0214] Synthesis Examples 2 to 29 Polysiloxanes (P-2 to P-29) were obtained in the same procedure as in Synthesis Example 1, except that the components and charged amounts of the alkoxysilanes described in Tables 1 and 2 were changed. The weight-average molecular weights of the polysiloxanes (P-2 to P-29) are shown in Tables 1 and 2.

[0215]

Table 1

[0216]

Table 2

[0217] Synthesis Example 30 Synthesis of HfTES The following reaction was carried out to synthesize HfTES (Hf-1).

[0218]

Chemical Formula

[0219] Into a 300 mL three-necked flask equipped with a reflux tube, 6.46 g (20.0 mmol) of pre-dried 2-(3-bromophenyl)-1,1,1,3,3,3-hexafluoropropanol (H-1), 7.38 g (40.0 mmol) of tetrabutylammonium iodide, and 0.2280 g (0.60 mmol) of bis(acetonitrile)(1,5-cyclooctadiene)rhodium(I) tetrafluoroborate were collected at room temperature. Then, under an argon atmosphere, 120 mL of dehydrated N,N-dimethylformamide, 11.1 mL (80.0 mmol) of dehydrated triethylamine, and 7.40 mL (40.0 mmol) of triethoxysilane were added, the mixture was heated to 80°C and stirred for 4 hours. After the reaction system was naturally cooled to room temperature, the solvent N,N-dimethylformamide was distilled off, and then 200 mL of diisopropyl ether was added. Celite was added to the resulting precipitate for filtration, the filtrate was washed 3 times with 100 mL of water, Na₂SO₄ was added for dehydration and drying, filtration was further performed, and then the solvent was distilled off. The residue as the reaction product was distilled and purified using a Kugelrohr apparatus under the conditions of 140°C to 190°C and 200 Pa, to obtain HfTES (Hf-1) as a colorless liquid. The obtained HfTES (Hf-1) 1 The ¹H-NMR measurement results are as follows.

[0220] 1 ¹H-NMR (solvent: CDCl₃ (deuterated chloroform), TMS (tetramethylsilane)): δ 8.03 (1H, s), 7.79 (2H, d, J=7.6 Hz), 7.47 (1H, t, J=7.6 Hz), 4.16 (1H, s), 3.88 (6H, q, J=5.0 Hz), 1.24 (9H, t, J=7.4 Hz).

[0221] Synthesis Example 31 Synthesis of acrylic liquid repellent (Ac-1) 100 g of cyclohexanone was added to a glass reaction vessel equipped with a stirrer, reflux condenser, dropping funnel, thermometer, and nitrogen gas inlet, and the temperature was raised to 110°C under a nitrogen gas atmosphere. The temperature of the cyclohexanone was maintained at 110°C, and a monomer mixture consisting of 44 g (0.65 mol) of N,N-dimethylacrylamide, 30 g (0.10 mol) of 2-(perfluorohexyl)ethyl methacrylate, 21 g (0.22 mol) of glycidyl methacrylate, and 5 g (0.03 mol) of 3-phenoxybenzyl acrylate was added dropwise at a constant rate over 2 hours using a dropping funnel to prepare a monomer solution. After the addition was complete, the monomer solution was raised to 115°C and reacted for 2 hours to obtain an acrylic liquid repellent (Ac-1). The weight-average molecular weight was determined using GPC, and the result was 5500.

[0222] Synthesis Example 32: Synthesis of Hydroxyl Group-Containing Diamine Compounds 18.3 g (0.05 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane was dissolved in 100 mL of acetone and 17.4 g (0.3 mol) of propylene oxide, and the mixture was cooled to -15°C. A solution of 20.4 g (0.11 mol) of 3-nitrobenzoyl chloride dissolved in 100 mL of acetone was added dropwise. After the addition was complete, the mixture was allowed to react at -15°C for 4 hours, and then returned to room temperature. The precipitated white solid was filtered off and vacuum-dried at 50°C.

[0223] 30 g of solid was placed in a 300 mL stainless steel autoclave and dispersed in 250 mL of methyl cellosolve. 2 g of 5% palladium-carbon was added. Hydrogen was introduced using a balloon, and the reduction reaction was carried out at room temperature. After approximately 2 hours, the reaction was terminated when it was confirmed that the balloon no longer deflated. After the reaction was complete, the palladium compound catalyst was removed by filtration, and the mixture was concentrated using a rotary evaporator to obtain a hydroxyl group-containing diamine compound represented by the following formula.

[0224] [ka]

[0225] Synthesis Example 33: Synthesis of alkali-soluble resin (b1) Under a stream of dry nitrogen, 88.8 g (0.20 mol) of 2,2-(3,4-dicarboxyphenyl)hexafluoropropane dianhydride was dissolved in 500 g of NMP. 96.7 g (0.16 mol) of the hydroxyl group-containing diamine compound obtained in Synthesis Example 31 and 1.24 g (0.005 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane were added along with 100 g of NMP, and the mixture was reacted at 20°C for 1 hour, followed by 50°C for 2 hours. Next, 8.7 g (0.08 mol) of 3-aminophenol was added as a terminal encapsulant along with 50 g of NMP, and the mixture was reacted at 50°C for 2 hours. Afterward, a solution of 47.7 g (0.40 mol) of N,N-dimethylformamide dimethylacetal diluted with 100 g of NMP was added. The mixture was then stirred at 50°C for 3 hours. After stirring was complete, the solution was cooled to room temperature, and then added to 5 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 24 hours to obtain the target polyimide precursor, alkali-soluble resin (b1). The number-average molecular weight of the alkali-soluble resin (b1), the polyimide precursor, was 12,000.

[0226] Synthesis Example 34: Synthesis of alkali-soluble resin (b2) Under a stream of dry nitrogen, 62.0 g (0.20 mol) of 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride was dissolved in 500 g of NMP. 96.7 g (0.16 mol) of the hydroxyl group-containing diamine compound obtained in Synthesis Example 31 and 1.24 g (0.005 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane were added along with 100 g of NMP, and the mixture was reacted at 20°C for 1 hour, followed by 50°C for 2 hours. Next, 8.7 g (0.08 mol) of 3-aminophenol was added as a terminal encapsulant along with 50 g of NMP, and the mixture was reacted at 50°C for 2 hours. Then, a solution of 47.7 g (0.40 mol) of N,N-dimethylformamide dimethyl acetal diluted with 100 g of NMP was added. After addition, the mixture was stirred at 50°C for 3 hours. After stirring, the solution was cooled to room temperature, and then added to 5 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 24 hours to obtain the target polyimide precursor, alkali-soluble resin (b2). The number-average molecular weight of the alkali-soluble resin (b2), the polyimide precursor, was 11,000.

[0227] Synthesis Example 35: Synthesis of alkali-soluble resin (b3) Under a stream of dry nitrogen, 62.0 g (0.20 mol) of 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride was dissolved in 500 g of NMP. To this, 44.85 g (0.16 mol) of bis(3-amino-4-hydroxyphenyl) sulfone and 1.24 g (0.005 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane were added along with 100 g of NMP, and the mixture was reacted at 20°C for 1 hour, followed by a reaction at 50°C for 2 hours. Next, 8.7 g (0.08 mol) of 3-aminophenol was added as a terminal encapsulant along with 50 g of NMP, and the mixture was reacted at 50°C for 2 hours. After that, a solution of 47.7 g (0.40 mol) of N,N-dimethylformamide dimethyl acetal diluted with 100 g of NMP was added. After the addition, the mixture was stirred at 50°C for 3 hours. After stirring, the solution was cooled to room temperature, and then added to 5 L of water to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 24 hours to obtain the target polyimide precursor, alkali-soluble resin (b3). The number-average molecular weight of the alkali-soluble resin (b3), the polyimide precursor, was 11,000.

[0228] Synthesis Example 36: Synthesis of alkali-soluble resin (b4) Under a stream of dry nitrogen, 41.3 g (0.16 mol) of diphenyl ether-4,4'-dicarboxylic acid was reacted with 43.2 g (0.32 mol) of 1-hydroxy-1,2,3-benzotriazole to obtain a mixture of dicarboxylic acid derivatives. This mixture was then dissolved in 70 g of NMP along with 73.3 g (0.20 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 1.24 g (0.005 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane, and the mixture was reacted at 75°C for 12 hours. Next, 13.1 g (0.08 mol) of 5-norbornene-2,3-dicarboxylic acid anhydride dissolved in 70 g of NMP was added, and the mixture was stirred for another 12 hours to complete the reaction. After filtering the reaction mixture, it was added to a water / methanol = 3 / 1 (volume ratio) solution to obtain a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 24 hours to obtain the target polybenzoxazole (PBO) precursor, alkali-soluble resin (b4). The number-average molecular weight of the alkali-soluble resin (b4), the PBO precursor, was 8500.

[0229] Synthesis Example 37: Synthesis of quinone diazide compound (C2) Under a stream of dry nitrogen, 21.23 g (0.05 mol) of TrisP-PA (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) and 33.58 g (0.125 mol) of 4-naphthoquinone diazidosulfonylic acid chloride were dissolved in 450 g of 1,4-dioxane and allowed to rise to room temperature. To this, 12.65 g (0.125 mol) of triethylamine mixed with 50 g of 1,4-dioxane was added dropwise, ensuring that the reaction system temperature did not exceed 35°C. After addition, the mixture was stirred at 30°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. The precipitated material was then collected by filtration. This precipitate was dried in a vacuum dryer to obtain a quinone diazide compound (c2), which is a naphthoquinone diazide compound. The quinone diazide substitution rate of this naphthoquinone diazide compound was 83%.

[0230] [ka]

[0231] Synthesis Example 38: Synthesis of Phenolic Resin (d1) Under a stream of dry nitrogen, 108.0 g (1.00 mol) of m-cresol, 75.5 g (0.93 mol) of 37% by mass formaldehyde aqueous solution, 0.63 g (0.005 mol) of oxalic acid dihydrate, and 264 g of methyl isobutyl ketone were charged. The mixture was then immersed in an oil bath, and the polycondensation reaction was carried out for 4 hours under reflux of the reaction mixture. Subsequently, the temperature of the oil bath was raised over 3 hours, and then the pressure in the flask was reduced to 4.0 kPa to 6.7 kPa to remove volatile components. The dissolved resin was then cooled to room temperature to obtain phenolic resin (d1), a novolac-type phenolic resin. The weight-average molecular weight was 3,500 from GPC.

[0232] Examples 1-36, Comparative Examples 1-6 Figure 1 shows a schematic diagram of the substrate used for evaluation.

[0233] A 10 nm transparent conductive ITO film was formed on the entire surface of an alkali-free glass plate 1 by sputtering and etched as the first electrode 2. An auxiliary electrode 3 was also formed simultaneously to allow for the extraction of the second electrode. The resulting substrate was ultrasonically cleaned for 10 minutes with "Semicoclean" (registered trademark) 56 (manufactured by Furuuchi Chemical Co., Ltd.), then washed with ultrapure water, and dried to obtain the substrate.

[0234] Next, under a yellow light, the components were mixed according to the mixing ratios shown in Tables 3, 4, and 5, and thoroughly stirred at room temperature to dissolve. The resulting solution was then filtered through a 0.45 μm pore size filter to obtain photosensitive resin compositions W1 to W42.

[0235] [Table 3]

[0236] [Table 4]

[0237] [Table 5]

[0238] Next, the compatibility of the obtained photosensitive resin compositions W1 to W42 was evaluated. The results are shown in Tables 6, 7, and 8.

[0239] Furthermore, the obtained photosensitive resin compositions W1 to W42 are applied to the substrate by spin coating, pre-baked on a hot plate at 120°C for 2 minutes to form a dry coating film with a thickness of approximately 2 μm, and then exposed to the full wavelength of a mercury lamp at an exposure dose of 120 mJ / cm² through a photomask having a predetermined pattern. 2 After irradiating with ultraviolet light (equivalent to h-ray), the substrate was developed with a 2.38 mass% TMAH aqueous solution for 60 seconds, rinsed with water, and a partition wall pattern 4 was created on the substrate with a single opening measuring 70 μm in width and 260 μm in length located in the center. Similarly, a partition wall pattern 5 was created on the substrate with openings measuring 70 μm in width and 260 μm in length arranged at a pitch of 155 μm in the width direction and a pitch of 465 μm in the length direction, with each opening exposing the first electrode.

[0240] Next, the substrates on which partition wall patterns 4 and 5 were formed were cured by heating them in a clean oven (manufactured by Koyo Thermo Systems Co., Ltd.) at 250°C under a nitrogen atmosphere for 1 hour. Using the substrate on which partition wall pattern 4 was formed, (3) liquid repellency was evaluated, and using the substrate on which partition wall pattern 5 was formed, (4) ink wettability of the openings was evaluated. Subsequently, (5) UV ozone resistance was evaluated. The results are shown in Tables 6, 7, and 8.

[0241] [Table 6]

[0242] [Table 7]

[0243] [Table 8]

[0244] Example 37 XPS analysis was performed on a cured product of the photosensitive resin composition W3 by the method described in the aforementioned <Method for measuring characteristic (v) by X-ray photoelectron spectroscopy (XPS) analysis>, and the obtained elemental concentrations (atom%) of F atoms and Si atoms are shown in Table 9.

[0245] Subsequently, analysis of a cured product of the photosensitive resin composition W3 was performed by the method described in the aforementioned <Method for measuring characteristic (vi) by X-ray photoelectron spectroscopy (XPS) analysis>, and the obtained elemental concentrations (atom%) of F atoms and Si atoms are shown in Table 9.

[0246] Next, the aforementioned (7) durability evaluation was performed using a cured product of the photosensitive resin composition W3, and the evaluation results are shown in Table 9.

[0247] Examples 38 to 41, Comparative Examples 7 and 8 The same evaluation as in Example 36 was performed, except that the photosensitive resin composition W3 was changed to any one of W23, W25, W27, W28, W33, and W34. The evaluation results are shown in Table 9.

[0248] [Table 9]

[0249] Examples 42 and 43 A 10 nm transparent conductive ITO film was formed across the entire surface of an alkali-free glass plate using the sputtering method. Photosensitive resin compositions W3 and W32 were then applied to the alkali-free glass plate by spin coating and pre-baked on a 120°C hot plate for 2 minutes to form a dry coating approximately 2 μm thick. Subsequently, half of the area of ​​the dried photosensitive resin material was subjected to "half-exposure," irradiating it with ultraviolet light at the full wavelength of a mercury lamp so that its thickness after development would be 0.5 μm. For the remaining half, the photosensitive resin material of W3, which has positive-type photosensitivity, was left unexposed to prevent thickness reduction during the development process. On the other hand, W32, which has negative-type photosensitivity, was exposed to an exposure dose of 120 mJ / cm² to prevent thickness reduction during the development process. 2 The substrate was irradiated with ultraviolet light (equivalent to the h-ray). Next, it was developed with a 2.38 mass% TMAH aqueous solution for 60 seconds, followed by rinsing with water to prepare a substrate with a dried photosensitive resin.

[0250] Next, the resulting photosensitive resin-coated substrate was heated in a clean oven (manufactured by Koyo Thermo Systems Co., Ltd.) at 250°C for 1 hour under a nitrogen atmosphere to cure it and create a cured substrate.

[0251] Regarding the contact angle of PGMEA measured on the surface of the cured product of photosensitive resin composition W3, the unexposed area was 46° and the partially exposed area was 5° or less. Thus, it was confirmed that the surface of the cured product made by partially exposing a positive-type photosensitive resin composition exhibits hydrophilicity. In other words, it is possible to form both a hydrophobic and a hydrophilic cured product with a single photolithography. On the other hand, regarding the contact angle of PGMEA measured on the surface of the cured product of negative-type photosensitive resin composition W32, the exposed area was 46° and the partially exposed area was 40°, confirming hydrophobicity in both areas. [Explanation of Symbols]

[0252] 1. Alkali-free glass substrate 2 1st electrode 3 Auxiliary electrode 4. Partition wall pattern with a single opening in the center. 5 partition patterns 6 Organic EL layer 7 Second electrode 8 circuit boards 9 Planarization layer 10 Patterned first electrodes 11 Cured product 12 The surface opposite to the interface where the first electrode and the cured material come into contact. 13 Interface where the first electrode and the cured material come into contact 14. Perpendicular to the interface where the first electrode and the cured material meet, and in the direction from the substrate to the cured material, and in a range of 100 to 200 nm starting from the interface where the first electrode and the cured material meet. 15 Perpendicular to the interface where the first electrode and the cured material meet, and in the direction from the substrate to the cured material, starting from the interface where the first electrode and the cured material meet, 100 nm 16. First stage of the cured product 17. Second stage of cured material

Claims

1. A photosensitive resin composition comprising a polysiloxane (A), an alkali-soluble resin (B), and a photosensitive agent (C), The polysiloxane (A) has a repeating unit structure of (i), (ii), and (iii), The photosensitive agent (C) contains a polymerizable unsaturated compound and a photopolymerization initiator (C-1), or a quinone diazide compound (C-2). Photosensitive resin composition. (i) Repeating unit structure shown by equation (1) and / or repeating unit structure shown by equation (2) (ii) Repeating unit structure shown by equation (3) and / or repeating unit structure shown by equation (4) (iii) Repeating unit structure shown by equation (5) and / or repeating unit structure shown by equation (6) 【Chemistry 1】 (R f R is a fluoride alkyl group having 7 to 21 fluorines and 5 to 12 carbon atoms. 1 R is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 15 carbon atoms. 2 R is an aryl group having 6 to 15 carbon atoms. 3 R is a single bond or an alkylene group having 1 to 4 carbon atoms, and Y is 1 or 2. 4 This refers to an organic group having 2 to 20 carbon atoms that contains an acidic group, and at least one of these organic groups having 2 to 20 carbon atoms that contains a carboxyl group. (* indicates a covalent bond.)

2. The aforementioned R 2 The photosensitive resin composition according to claim 1, wherein at least one of the elements has a structure represented by formula (26) or formula (27). 【Chemistry 2】 (R 16 b is a hydroxyl group, a C1-C5 alkyl group, a C1-C5 alkoxy group, a C1-C5 halogenated alkyl group, a C1-C5 hydroxyalkyl group, or a C1-C5 halogenated hydroxyalkyl group. b is an integer from 0 to 3. * indicates a covalent bond.

3. The aforementioned R 2 The photosensitive resin composition according to claim 1 or 2, wherein at least one of the members is a 1-naphthyl group, a 2-naphthyl group, or a structure represented by formula (7). 【Transformation 3】 (a represents an integer between 1 and 3. * indicates a covalent bond.)

4. said R 4 , at least one of which has a structure represented by formula (8) or formula (9), the photosensitive resin composition according to any one of claims 1 to 3. 【Chemistry 4】 (R 15 represents a single bond or an alkylene group with 1 to 10 carbon atoms. * indicates a covalent bond.

5. The photosensitive resin composition according to any one of claims 1 to 4, wherein the total amount of the repeating unit structure represented by formula (1) and the repeating unit structure represented by formula (2) is 5 to 30 mol% of 100 mol% of the total repeating unit structure of the polysiloxane (A).

6. The photosensitive resin composition according to any one of claims 1 to 5, wherein the total amount of repeating unit structures represented by formula (3) and formula (4) is 20 to 70 mol% of 100 mol% of the total repeating unit structures of the polysiloxane (A).

7. The photosensitive resin composition according to any one of claims 1 to 6, wherein the total amount of the repeating unit structure represented by formula (5) and the repeating unit structure represented by formula (6) is 1 to 40 mol% of 100 mol% of the total repeating unit structure of the polysiloxane (A).

8. The photosensitive resin composition according to any one of claims 1 to 7, wherein the polysiloxane (A) further has a repeating unit structure of (vii). (vii) Repeating unit structure shown in equation (25) 【Transformation 5】 (* indicates a covalent bond.)

9. The photosensitive resin composition according to claim 8, wherein the polysiloxane (A) contains 30 to 300 moles of the repeating unit structure of (vii) with respect to 100 moles of the repeating unit structure of (iii).

10. The photosensitive resin composition according to any one of claims 1 to 9, wherein the alkali-soluble resin (B) comprises one or more selected from the group consisting of polyimide, polybenzoxazole, polyamideimide, precursors of any of these, and copolymers thereof.

11. The photosensitive resin composition according to claim 10, wherein the polyimide, polybenzoxazole, polyamideimide, any precursor thereof, and copolymer thereof have a structure represented by formula (16) in the residue of the carboxylic acid component and / or the residue of the diamine component. 【Transformation 6】 (* indicates a covalent bond.)

12. The photosensitive resin composition according to any one of claims 1 to 11, wherein the photosensitive agent (C) comprises a quinone diazide compound.

13. The photosensitive resin composition according to claim 12, wherein the alkali-soluble resin (B) comprises a phenolic resin and / or a polyhydroxystyrene resin.

14. The photosensitive resin composition according to any one of claims 1 to 13, wherein the content of the polysiloxane (A) is 0.1 parts by mass or more and 10 parts by mass or less per 100 parts by mass of the alkali-soluble resin (B).

15. A cured product obtained by curing the photosensitive resin composition according to any one of claims 1 to 14.

16. A laminate comprising a patterned first electrode and a cured material according to claim 15, stacked on a substrate in that order, wherein at least a portion of the cured material on the first electrode is open.

17. The laminate according to claim 16, wherein analysis of the cured product by X-ray photoelectron spectroscopy (XPS) satisfies characteristic (v) and characteristic (vi). (v) The concentration of F atoms measured from at least a portion of the surface of the cured product opposite to the surface in contact with the first electrode is 8.1 atom% or more and 30.0 atom% or less, and the concentration of Si atoms is 1.0 atom% or more and 6.0 atom% or less. (vi) The concentration of F atoms in the cured product measured perpendicular to the interface where the first electrode and the cured product are in contact, and in the direction from the substrate to the cured product, in a range of 100 to 200 nm starting from the interface where the first electrode and the cured product are in contact, is 0.1 atom% or more and 8.0 atom% or less.

18. A display device comprising a cured product according to claim 15, or a laminate according to claim 16 or 17.

19. A method for manufacturing a display device, comprising steps (5) and (6) in this order. (5) In the laminate according to claim 16 or 17, A process of forming a functional layer by applying a functional ink onto the first electrode using an inkjet printer. (6) Step of forming a second electrode on the functional layer.

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