Cleaning solution for removing cerium compounds, cleaning method, and method for manufacturing semiconductor wafers.

Abstract

The present invention addresses the problem of providing a cleaning liquid that excels in removing a cerium compound. The present invention relates to a cleaning liquid for removing a cerium compound, the cleaning liquid containing: (A) a six-member ring compound having 2 or more hydroxyl groups; and (B) an inorganic acid compound and having a mass ratio of component (B) to component (A) of 0.05 to 0.6. The present invention also relates to a cleaning method that uses this cleaning liquid and a method for producing a semiconductor wafer that uses this cleaning liquid.

Description

Technical Field

[0001] The present invention relates to a cleaning solution for removing cerium compounds, a cleaning method, and a method for producing a semiconductor wafer. Background Art

[0002] A semiconductor wafer is produced by forming a deposited layer of a metal film to serve as wiring and an interlayer insulating film on a silicon substrate, then planarizing the surface through a chemical mechanical polishing (hereinafter sometimes abbreviated as "CMP") process using an abrasive composed of an aqueous slurry containing abrasive fine particles, and stacking new layers on the planarized surface. Microfabrication of semiconductor wafers requires high-precision flatness in each layer, so the planarization process by CMP is extremely important.

[0003] In semiconductor device manufacturing processes, in order to electrically isolate elements such as transistors, an element isolation structure based on STI (Shallow Trench Isolation), which is more suitable for miniaturization, has been used in place of conventional LOCOS (Local Oxidation of Silicon). Further, ILD (Inter Layer Dielectric) is used between wiring layers. STI and ILD are produced by forming a silicon oxide film using TEOS (Tetraethyl Orthosilicate) or the like as a raw material, and then planarizing the film through a CMP process.

[0004] Since a large amount of abrasive fine particles from the abrasive used in the CMP process and organic residues derived from organic compounds contained in the slurry remain on the surface of a semiconductor wafer after the CMP process, the semiconductor wafer after the CMP process is subjected to a cleaning process to remove these contaminants.

[0005] In recent years, cerium-based polishing particles, such as cerium oxide, have been used in the CMP process for silicon oxide and silicon nitride films to increase the polishing speed. However, these cerium-based polishing particles form bonds with the surface of the silicon oxide and silicon nitride films during the CMP process, making them difficult to remove in the cleaning process.

[0006] Therefore, conventionally, cleaning was carried out using strong chemicals such as diluted hydrofluoric acid or sulfuric acid peroxide. However, due to safety and wastewater treatment issues, various cleaning solutions have been proposed as alternatives to diluted hydrofluoric acid or sulfuric acid peroxide. For example, Patent Document 1 discloses a cleaning solution containing a strong acid. [Prior art documents] [Patent Documents]

[0007] [Patent Document 1] Japanese Patent Application Publication No. 2012-134357 [Overview of the project] [Problems that the invention aims to solve]

[0008] However, the cleaning solution disclosed in Patent Document 1 contains ascorbic acid, which has the problem of being ineffective in removing cerium compounds. In particular, ascorbic acid in aqueous solution undergoes a self-decomposition reaction with oxygen, which has the problem of being difficult to handle.

[0009] This invention has been made in view of these problems, and the object of this invention is to provide a cleaning solution that is excellent in removing cerium compounds. [Means for solving the problem]

[0010] Previously, various cleaning solutions containing different components had been considered. However, after diligent research, the inventors discovered a cleaning solution containing components (A) and (B), described below, in a predetermined mass ratio, and found that this cleaning solution exhibits excellent removal properties for cerium compounds.

[0011] In other words, the gist of the present invention is as follows: [1] A cleaning solution for removing cerium compounds, comprising the following component (A) and the following component (B), wherein the mass ratio of component (B) to component (A) is 0.05 to 0.6. Component (A): A six-membered ring compound having two or more hydroxyl groups. Component (B): Inorganic acid compound [2] The washing solution according to [1], wherein component (A) comprises at least one selected from the group consisting of catechol, resorcinol, hydroquinone, pyrogallol, and methylcatechol. [3] The washing solution according to [1] or [2], wherein component (A) comprises pyrogallol. [4] The cleaning solution according to any one of [1] to [3], wherein component (B) comprises at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, and phosphorous acid. [5] The cleaning solution according to any one of [1] to [4], wherein component (B) contains sulfuric acid. [6] Furthermore, a cleaning solution according to any one of [1] to [5], comprising the following ingredient (C). Component (C): Water-soluble organic polymer [7] The cleaning solution according to [6], wherein component (C) comprises at least one selected from polycarboxylic acids and salts thereof. [8] A washing solution described in any one of [1] to [7], wherein the pH is between 1 and 4. [9] A cleaning solution described in any one of [1] to [8], used for cleaning after chemical and mechanical polishing.

[10] A cleaning solution according to any one of [1] to [9], used for removing cerium compounds on a silicon oxide film and / or silicon nitride film. A cleaning method comprising the step of removing a cerium compound using a cleaning solution described in any one of

[11] [1] to

[10] . A method for manufacturing a semiconductor wafer, comprising the step of removing a cerium compound using a cleaning solution described in any one of

[12] [1] to

[10] .

[13] The method for producing a semiconductor wafer according to

[12] , further comprising a step of performing chemical mechanical polishing using an abrasive containing a cerium compound. [Effects of the Invention]

[0012] The cleaning liquid of the present invention is excellent in removability of cerium compounds. Further, the cleaning method of the present invention is excellent in removability of cerium compounds. Furthermore, since the method for producing a semiconductor wafer of the present invention includes a cleaning step excellent in removability of cerium compounds, it can suppress malfunctions of semiconductor devices. [Mode for Carrying Out the Invention]

[0013] The present invention will be described in detail below, but the present invention is not limited to the following embodiments, and can be implemented with various modifications within the scope of the gist thereof. In this specification, when the expression "~" is used, it shall be used as an expression including the numerical values or physical property values before and after it.

[0014] [Cleaning Liquid] The cleaning liquid of the present invention is for removing cerium compounds, is suitably used for removing cerium compounds on silicon oxide films and / or silicon nitride films, and is particularly suitably used for removing cerium compounds on silicon oxide films.

[0015] The phrase "cerium compounds on a silicon oxide film and / or a silicon nitride film" means at least one cerium compound selected from the group consisting of a cerium compound on a silicon oxide film and a cerium compound on a silicon nitride film. Each component is described in detail below.

[0016] (Component (A)) The cleaning liquid of the present invention contains the following component (A). Component (A): a six-membered ring compound having 2 or more hydroxyl groups

[0017] The cleaning liquid of the present invention contains component (A), which selectively acts on cerium ions, can break the bond between the cerium compound and silicon oxide without damaging silicon oxide films or silicon nitride films, and is excellent in removability of cerium compounds and low damage property to silicon oxide films and silicon nitride films.

[0018] Component (A) is excellent in reducing power, and thus is preferably a six-membered ring compound having 2 to 5 hydroxyl groups, more preferably a six-membered ring compound having 2 to 4 hydroxyl groups, and still more preferably a six-membered ring compound having 2 to 3 hydroxyl groups.

[0019] Component (A) may be a six-membered ring compound that further has a substituent in addition to two or more hydroxyl groups. Examples of such substituents include an alkyl group, a vinyl group, and a carboxyl group, among which an alkyl group having 1 to 3 carbon atoms is preferable.

[0020] Component (A) is excellent in reducing power, and thus is preferably an aromatic six-membered ring compound having two or more hydroxyl groups.

[0021] Specific examples of component (A) include catechol, resorcinol, hydroquinone, pyrogallol, methylcatechol, and phloroglucinol. One of these components (A) may be used alone, or two or more thereof may be used in combination.

[0022] Among these components (A), catechol, resorcinol, hydroquinone, pyrogallol, and methylcatechol are preferable due to their excellent reducing power under an acidic atmosphere; pyrogallol and catechol are more preferable; and pyrogallol is even more preferable.

[0023] (Component (B)) The cleaning liquid of the present invention contains the following component (B). Component (B): inorganic acid compound

[0024] The cleaning solution of the present invention, by containing component (B), improves the ionization reaction rate of cerium and the stability of the cleaning solution.

[0025] Specifically, the ionization reaction rate of cerium is improved, and the self-decomposition reaction of component (A) is suppressed, thereby improving the removal efficiency of cerium compounds.

[0026] Examples of component (B) include sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, phosphorous acid, and perchloric acid. These components (B) may be used individually or in combination of two or more.

[0027] Among these components (B), sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, phosphorous acid, and perchloric acid are preferred due to their excellent proton-donating ability, sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, and phosphorous acid are more preferred, sulfuric acid, nitric acid, and phosphoric acid are even more preferred, and sulfuric acid is particularly preferred.

[0028] (Component (C)) The cleaning solution of the present invention preferably further contains the following component (C) because it disperses cerium compounds and improves the removal of cerium compounds. Component (C): Water-soluble organic polymer

[0029] Examples of component (C) include polycarboxylic acids and salts of polycarboxylic acids. Examples of polycarboxylic acids include polyacrylic acid and polymethacrylic acid. Examples of salts of polycarboxylic acids include salts of polyacrylic acid and salts of polymethacrylic acid. These components (C) may be used individually or in combination of two or more.

[0030] Among these components (C), polycarboxylic acids and salts of polycarboxylic acids are preferred because they are easily soluble in acidic aqueous solutions, polycarboxylic acids are more preferred, and polyacrylic acid is even more preferred.

[0031] Polycarboxylic acids may be homopolymers of carboxylic acid-containing monomers, or copolymers of carboxylic acid-containing monomers with other monomers.

[0032] The weight-average molecular weight of component (C) is preferably 100 to 20,000, and more preferably 200 to 10,000. If the weight-average molecular weight of component (C) is 100 or more, it disperses the cerium compound and improves the removal of the cerium compound. Also, if the weight-average molecular weight of component (C) is 20,000 or less, it is easily soluble in water.

[0033] (Component (D)) Since the cleaning solution of the present invention can adjust the pH of the cleaning solution, it is preferable that it further contains the following component (D). Ingredient (D): pH adjuster

[0034] Examples of component (D) include alkalis. Among these components (D), alkalis are preferred because they can disperse cerium compounds, ammonia and quaternary ammonium salts are more preferred because they do not contain metal components, and ammonia is even more preferred.

[0035] (Component (E)) The cleaning solution of the present invention is preferable to further contain the following component (E) because it improves the removal of fine particles. Ingredient (E): Water

[0036] Examples of water include ion-exchanged water, distilled water, and ultrapure water. Among these, ultrapure water is preferred from the viewpoint of further improving the removal of cerium compounds.

[0037] (Other ingredients) The cleaning solution of the present invention may contain other components other than components (A) to (E), as long as they do not impair the effects of the present invention. Other components include, for example, chelating agents, surfactants, and etching inhibitors.

[0038] (Physical properties of the cleaning solution) The pH of the cleaning solution is preferably 1 to 4, more preferably 1.5 to 3, and even more preferably 1.5 to 2.5. When the pH of the cleaning solution is 1 or higher, damage to components such as brushes used in the cleaning process of semiconductor wafers can be suppressed. Furthermore, when the pH of the cleaning solution is 4 or lower, the self-decomposition reaction of component (A) is suppressed, and the removal efficiency of cerium compounds is improved.

[0039] (Mass ratio of each component) The mass ratio of component (B) to component (A) (mass of component (B) / mass of component (A)) is 0.05 to 0.6, preferably 0.07 to 0.55, more preferably 0.1 to 0.5, and even more preferably 0.2 to 0.4. When the mass ratio of component (B) to component (A) is 0.05 or higher, the removal of cerium compounds is improved due to the ionization reaction promoting effect and the suppression of self-decomposition of component (A). Furthermore, when the mass ratio of component (B) to component (A) is 0.6 or lower, the removal of cerium compounds and the low damage to silicon oxide and silicon nitride films are improved due to the reducing power.

[0040] When the cleaning solution of the present invention contains component (C), the mass ratio of component (C) to component (A) (mass of component (C) / mass of component (A)) is preferably 0.001 to 10, more preferably 0.005 to 2, and even more preferably 0.01 to 1. When the mass ratio of component (C) to component (A) is 0.001 or higher, the removal of cerium compounds is improved due to the dispersion effect. Furthermore, when the mass ratio of component (C) to component (A) is 10 or lower, the removal of cerium compounds and the low damage to silicon oxide and silicon nitride films are improved due to the reducing power.

[0041] When the cleaning solution of the present invention contains component (C), the mass ratio of component (C) to component (B) (mass of component (C) / mass of component (B)) is preferably 0.001 to 10, more preferably 0.005 to 2, and even more preferably 0.01 to 1. When the mass ratio of component (C) to component (B) is 0.001 or higher, the removal efficiency of cerium compounds is improved due to the dispersion effect. Furthermore, when the mass ratio of component (C) to component (B) is 10 or lower, the removal efficiency of cerium compounds is improved due to the ionization reaction promoting effect and the self-decomposition suppression effect of component (A).

[0042] (Percentage of each component in the cleaning solution) The content of component (A) is preferably 0.001% to 30% by mass, more preferably 0.005% to 20% by mass, and even more preferably 0.01% to 1% by mass, per 100% by mass of the cleaning solution. When the content of component (A) is 0.001% by mass or more, the removal of cerium compounds and the low damage to silicon oxide and silicon nitride films are improved due to the reducing power. Furthermore, when the content of component (A) is 30% by mass or less, if the cleaning solution contains component (E), component (A) can be sufficiently dissolved in component (E), thereby reducing the manufacturing cost of the cleaning solution.

[0043] The content of component (B) is preferably 0.0001% to 30% by mass, more preferably 0.0005% to 20% by mass, and even more preferably 0.001% to 1% by mass, per 100% by mass of the cleaning solution. When the content of component (B) is 0.0001% by mass or more, the removal of cerium compounds is improved due to the ionization reaction promoting effect and the self-decomposition suppression effect of component (A). Furthermore, when the content of component (B) is 30% by mass or less, if the cleaning solution contains component (E), component (B) can be sufficiently dissolved in component (E), thereby reducing the manufacturing cost of the cleaning solution.

[0044] When the cleaning solution of the present invention contains component (C), the content of component (C) is preferably 0.001% to 10% by mass, more preferably 0.005% to 5% by mass, and even more preferably 0.01% to 0.2% by mass, based on 100% by mass of the cleaning solution. When the content of component (C) is 0.001% by mass or more, the removal of cerium compounds is improved due to the dispersion effect. Furthermore, when the content of component (C) is 10% by mass or less, if the cleaning solution contains component (E), component (C) can be sufficiently dissolved in component (E), thereby reducing the manufacturing cost of the cleaning solution.

[0045] When the cleaning solution of the present invention contains component (D), the content of component (D) is preferably 0.0001% to 30% by mass, more preferably 0.0005% to 20% by mass, and even more preferably 0.001% to 1% by mass, based on 100% by mass of the cleaning solution. If the content of component (D) is 0.0001% by mass or more, the pH of the cleaning solution can be easily adjusted. Furthermore, if the content of component (D) is 30% by mass or less, the pH of the cleaning solution can be adjusted without impairing the effects of the present invention.

[0046] If the cleaning solution of the present invention contains other components, the content of the other components is preferably 20% by mass or less, more preferably 0.0001% to 10% by mass, and even more preferably 0.001% to 1% by mass, based on 100% by mass of the cleaning solution. When the content of the other components is 20% by mass or less, the effects of the other components can be imparted without impairing the effects of the present invention.

[0047] If the cleaning solution of the present invention contains component (E), it is preferable that the content of component (E) be the remainder of the other components (components (A) to (D) and other components).

[0048] (Method of manufacturing the cleaning solution) The method for producing the cleaning solution of the present invention is not particularly limited, and it can be produced by mixing component (A), component (B), and, if necessary, components (C) to (E), and other components. The order of mixing is not particularly limited; all components may be mixed at once, or some components may be mixed beforehand and the remaining components may be mixed afterward.

[0049] The present invention's method for producing the cleaning solution may involve blending each component to achieve a concentration suitable for cleaning. However, to reduce costs such as transportation and storage, a cleaning solution containing high concentrations of each component other than component (E) may be prepared, and then diluted with component (E) before cleaning.

[0050] The dilution ratio can be set appropriately depending on the object to be cleaned, but 30 to 150 times is preferred, and 40 to 120 times is more preferred.

[0051] (Items to be cleaned) Examples of materials that can be cleaned with the cleaning solution of the present invention include semiconductor wafers, glass, metals, ceramics, resins, magnetic materials, and superconductors. Among these materials, those having a surface with an exposed silicon oxide film or silicon nitride film are preferred, as the effects of the present invention are significantly improved, semiconductor wafers having a surface with an exposed silicon oxide film or silicon nitride film are more preferred, and semiconductor wafers having a surface with an exposed silicon oxide film are even more preferred.

[0052] On the surface of a semiconductor wafer having an exposed silicon oxide or silicon nitride film, metals may coexist with silicon oxides and silicon nitrides.

[0053] (Types of cleaning processes) Because the cleaning solution of the present invention has excellent removal properties for cerium compounds, it can be suitably used for cleaning after chemical and mechanical polishing.

[0054] Chemical mechanical polishing (CMP) is a process that mechanically processes and flattens the surface of a semiconductor wafer. Typically, in the CMP process, a specialized device is used to hold the back side of the semiconductor wafer in place using a jig called a platen, press the surface of the semiconductor wafer against a polishing pad, and pour an abrasive containing polishing particles onto the polishing pad to polish the surface of the semiconductor wafer.

[0055] (CMP) CMP (Chemical Polishing) is performed by rubbing the object to be polished against a polishing pad using an abrasive. The abrasive is not particularly limited as long as it is insoluble in water and capable of polishing the object to be polished, but abrasive fine particles are preferred, and abrasive fine particles of cerium compounds are more preferred, as they allow the cleaning solution of the present invention to exert its full effect.

[0056] The abrasive particles may contain colloidal silica (SiO2), fumed silica (SiO2), or alumina (Al2O3) in addition to cerium compound abrasive particles.

[0057] Examples of cerium compounds include cerium oxide and cerium hydroxide. These cerium compounds may be used individually or in combination of two or more. Among these cerium compounds, cerium oxide and cerium hydroxide are preferred, with cerium oxide being more preferred, due to their excellent polishing speed and low scratching properties.

[0058] Abrasives may contain additives other than abrasive particles, such as oxidizing agents and dispersants. In particular, in CMP (Chemical Polishing) of semiconductor wafers with exposed metal surfaces, corrosion inhibitors are often included because the metal is prone to corrosion.

[0059] When the cleaning solution of the present invention is applied to a semiconductor wafer having a surface where a silicon oxide film or silicon nitride film is exposed after polishing with an abrasive containing such cerium compound polishing fine particles, it can very effectively remove contamination of the semiconductor wafer originating from cerium compounds.

[0060] (Washing conditions) A preferred method for cleaning the object to be cleaned is to bring the cleaning solution of the present invention into direct contact with the object to be cleaned. Methods for directly contacting the object to be cleaned with the cleaning solution of the present invention include, for example, a dipping method in which a cleaning tank is filled with the cleaning solution of the present invention and the object to be cleaned is immersed in it; a spinning method in which the object to be cleaned is rotated at high speed while the cleaning solution of the present invention is flowed over the object from a nozzle; and a spraying method in which the cleaning solution of the present invention is sprayed onto the object to be cleaned. Among these methods, the spinning method and the spraying method are preferred because they allow for more efficient removal of contaminants in a shorter time.

[0061] Examples of devices for performing such cleaning include batch-type cleaning devices that simultaneously clean multiple items to be cleaned contained in a cassette, and sheet-type cleaning devices that clean one item at a time by mounting it in a holder. Among these devices, sheet-type cleaning devices are preferred because they can shorten the cleaning time and reduce the amount of cleaning solution used in this invention.

[0062] Regarding the cleaning method for the object to be cleaned, a cleaning method using physical force is preferred because it further improves the removal of contamination by fine particles adhering to the object to be cleaned and shortens the cleaning time. Scrub cleaning using a cleaning brush is preferred, ultrasonic cleaning with a frequency of 0.5 megahertz or higher is more preferred, and scrub cleaning using a resin brush is even more preferred because it is more suitable for cleaning after CMP.

[0063] The material of the resin brush is not particularly limited, but polyvinyl alcohol and polyvinyl formal are preferred because they are easy to manufacture.

[0064] The cleaning temperature can be room temperature, or it may be heated to 30-70°C as long as it does not impair the performance of the semiconductor wafer.

[0065] [Washing method] The cleaning method of the present invention is a method that includes the step of removing a cerium compound on a silicon oxide film and / or silicon nitride film using the cleaning solution of the present invention, as described above.

[0066] [Method for manufacturing semiconductor wafers] The semiconductor wafer manufacturing method of the present invention is a method that includes the step of removing a cerium compound on a silicon oxide film and / or silicon nitride film using the cleaning solution of the present invention, and preferably includes the step of performing chemical mechanical polishing using an abrasive containing a cerium compound. [Examples]

[0067] The present invention will be described in more detail below using examples, but the present invention is not limited to the following examples without departing from its essence.

[0068] (raw materials) Ingredient (A): Pyrogallol (manufactured by Fujifilm Wako Pure Chemical Corporation) Catechol (manufactured by Fujifilm Wako Pure Chemical Corporation) Ascorbic acid (manufactured by Fujifilm Wako Pure Chemical Corporation) Ingredient (B): Sulfuric acid (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) Nitric acid (manufactured by Fujifilm Wako Pure Chemical Corporation)

[0069] Ingredient (E): Water

[0070] (pH measurement) The washing solutions obtained in the examples and comparative examples were stirred using a magnetic stirrer, and their pH was measured using a pH meter (model "D-74", manufactured by Horiba, Ltd.).

[0071] (Measurement of cerium oxide residue) A silicon substrate coated with a silicon oxide film using tetraethoxysilane (TEOS) by plasma CVD (Chemical Vapor Deposition) was cut into 25 mm x 40 mm pieces. Next, the silicon substrate was chemically and mechanically polished (CMP) for 30 seconds using a cerium oxide-containing abrasive (aqueous dispersion of cerium oxide fine particles with a particle size of 200 nm or less) and a polishing pad (product name "IC1000," manufactured by Nitta Haas Corporation). Then, the silicon substrate was cleaned by applying the cleaning solution obtained in the examples and comparative examples at a flow rate of 100 ml / min while pressing a polyvinyl alcohol brush against it and rotating it at 150 rpm for 30 seconds. Furthermore, it was cleaned again under the same conditions while water was flowing over it. The silicon substrate was dried, and the amount of cerium oxide remaining on the surface of the silicon substrate (atms / cm³) was measured using a total internal reflection X-ray fluorescence analyzer (model name "NANOHUNTER II," manufactured by Rigaku Corporation). 2 ) was measured.

[0072] [Example 1] A washing solution was obtained by mixing the components such that, in 100% by mass of the washing solution, pyrogallol (component (A)) was 0.38% by mass, sulfuric acid (component (B)) was 0.049% by mass, and water (component (E)) was the remainder. The evaluation results of the obtained cleaning solutions are shown in Table 1.

[0073] [Examples 2-8, Comparative Examples 1-9] Except for using the types and percentages of raw materials shown in Table 1 for components (A) and (B), the same procedure as in Example 1 was followed to obtain a washing solution. The evaluation results of the obtained cleaning solutions are shown in Table 1.

[0074] [Table 1]

[0075] As can be seen from Table 1, the cleaning solutions obtained in Examples 1 to 8, which simultaneously contained component (A) and component (B) in a predetermined mass ratio (B) / (A), exhibited excellent cerium oxide removal properties.

[0076] On the other hand, the cleaning solutions obtained in Comparative Examples 1 to 9, which either did not contain either component (A) or component (B), or contained both components (A) and (B) but whose mass ratio (B) / (A) was outside the specified range, showed inferior cerium oxide removal performance.

[0077] Although various embodiments have been described above, it goes without saying that the present invention is not limited to these examples. It is clear to those skilled in the art that various modifications or alterations can be conceived within the scope of the claims, and these will naturally also fall within the technical scope of the present invention. Furthermore, the components in the above embodiments may be combined in any way without departing from the spirit of the invention.

[0078] This application is based on Japanese Patent Application No. 2021-183700 filed on November 10, 2021, and its contents are incorporated herein by reference. [Industrial applicability]

[0079] Because the cleaning solution of the present invention is excellent at removing cerium compounds from silicon oxide films and / or silicon nitride films, it can be suitably used for cleaning after chemical and mechanical polishing.

Claims

1. A cleaning solution for removing cerium compounds, comprising the following component (A) and the following component (B), wherein the mass ratio of component (B) to component (A) is 0.05 to 0.

6. Component (A): A six-membered ring compound having two or more hydroxyl groups. Component (B): An inorganic acid compound comprising at least one selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, and phosphorous acid.

2. The washing solution according to claim 1, wherein component (A) comprises at least one selected from the group consisting of catechol, resorcinol, hydroquinone, pyrogallol, and methylcatechol.

3. The cleaning solution according to claim 1, wherein component (A) comprises pyrogallol.

4. The cleaning solution according to claim 1, wherein component (B) contains sulfuric acid.

5. Furthermore, the cleaning solution according to claim 1, comprising the following component (C). Component (C): Water-soluble organic polymer

6. The cleaning solution according to claim 5, wherein the component (C) comprises at least one selected from polycarboxylic acids and salts thereof.

7. The washing solution according to claim 1, wherein the pH is 1 to 4.

8. The cleaning solution according to claim 1, used for cleaning after chemical and mechanical polishing.

9. The cleaning solution according to claim 1, used for removing cerium compounds on a silicon oxide film and / or silicon nitride film.

10. A cleaning method comprising the step of removing a cerium compound using the cleaning solution described in any one of Claims 1 to 9.

11. A method for manufacturing a semiconductor wafer, comprising the step of removing a cerium compound using a cleaning solution according to any one of claims 1 to 9.

12. Furthermore, the method for manufacturing a semiconductor wafer according to claim 11, further comprising the step of performing chemical mechanical polishing using an abrasive containing a cerium compound.

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