Semiconductor laser device

Abstract

To provide a semiconductor laser device capable of suppressing axis deviation of a lens relative to a semiconductor laser element.SOLUTION: A semiconductor laser device includes: a sub mount 3; a semiconductor laser element disposed on the sub mount 3; a lens 5 that adjusts the spread angle of a laser beam in a Z direction; a first support body 6 that supports the lens 5 with respect to the sub mount 3; and a first joining member 8 that joins the lens 5 and the first support body 6. The first support body 6 has a first opening part 64 opening to a first surface 61 and a second surface 62. At least a portion of an inner-side opening 64a on a first surface 61 side in the first opening part 64 overlaps with a first end surface 53a of the lens 5 as viewed in a Y direction. The first joining member 8 is disposed contiguous to at least a portion of a region R11a between the first end surface 53a and the inner-side opening 64a, and to at least a portion of a region R12 inside the first opening part 64.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a semiconductor laser device. [Background Art]

[0002] A semiconductor laser device is known that includes a base, a semiconductor laser element disposed on the base, a lens facing the semiconductor laser element, a support body that supports the lens relative to the base, and a bonding member that bonds the lens and the support body (see, for example, Patent Document 1). [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2014-170888 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] In the semiconductor laser device as described above, if the portion of the bonding member disposed in the region between the end face of the lens and the support surface of the support body is thick, there is a risk that the axial misalignment of the lens relative to the semiconductor laser element increases due to deformation of this portion (e.g., swelling, thermal expansion and thermal contraction). On the other hand, if the portion of the bonding member disposed in the region between the end face of the lens and the support surface of the support body is thin, the amount of the bonding member that overflows to the periphery increases accordingly, and there is a risk that the axial misalignment of the lens relative to the semiconductor laser element increases due to deformation of the overflowed portion of the bonding member.

[0005] An object of the present invention is to provide a semiconductor laser device capable of suppressing axial misalignment of a lens relative to a semiconductor laser element. [Means for Solving the Problem]

[0006] The semiconductor laser apparatus of the present invention comprises: [1] a base; a semiconductor laser element disposed on the base and having at least one light-emitting point for emitting laser light; a lens having a light-incident surface facing the at least one light-emitting point in a first direction, a light-emitting surface located on the opposite side of the light-incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser light in a third direction perpendicular to both the first and second directions; a first surface located on the side of the first end face in the second direction, and the A semiconductor laser device comprising: a first support having a second surface located opposite to the first end face in a second direction and supporting the lens with respect to the base; and a first joining member joining the lens and the first support, wherein the first support has a first opening that opens to the first surface and the second surface, at least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction, and the first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and at least a portion of the region within the first opening.

[0007] In the semiconductor laser apparatus described in [1] above, the first support body that supports the lens with respect to the base has a first opening that opens to a first surface and a second surface, and at least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face of the lens when viewed from the second direction. In this state, the first bonding member is continuously arranged in at least a portion of the region between the first end face of the lens and the inner opening of the first opening, and at least a portion of the region within the first opening of the first support body. This suppresses the protrusion of the first bonding member from the region between the first end face of the lens and the inner opening of the first opening outwards, while making the portion of the first bonding member arranged in the region between the first end face of the lens and the inner opening of the first opening thinner. Therefore, axial misalignment of the lens caused by deformation of the first bonding member is suppressed. Moreover, since the portion of the first bonding member arranged in the region within the first opening of the first support body functions as a core, the bonding strength between the lens and the first support body is improved, and axial misalignment of the lens in the direction perpendicular to the second direction is suppressed. As described above, the semiconductor laser apparatus described in [1] can suppress axial misalignment of the lens relative to the semiconductor laser element.

[0008] The semiconductor laser apparatus of the present invention may also be [2] "the semiconductor laser apparatus according to [1] above, wherein the first bonding member is continuously arranged in at least a portion of the region between the first end face and the first surface, at least a portion of the region between the first end face and the inner opening of the first opening, and at least a portion of the region within the first opening." The semiconductor laser apparatus according to [2] above can further improve the bonding strength between the lens and the first support while suppressing axial misalignment of the lens in a direction perpendicular to the second direction.

[0009] The semiconductor laser apparatus of the present invention may also be [3] "the semiconductor laser apparatus according to [1] or [2] above, wherein the first opening is a through hole opening to the first surface and the second surface." According to the semiconductor laser apparatus according to [3], the first bonding member is more likely to remain in the region within the through hole, thereby improving the bonding strength between the lens and the first support.

[0010] The semiconductor laser apparatus of the present invention may also be [4] "the semiconductor laser apparatus according to [1] or [2] above, wherein the first aperture is a notch that opens to the first surface and the second surface and opens to a third surface connecting the first surface and the second surface." According to the semiconductor laser apparatus according to [4], the first bonding member can easily escape from the region between the first end surface of the lens and the inner opening of the first aperture towards the notch, thereby suppressing the protrusion of the first bonding member from the region between the first end surface of the lens and the inner opening of the first aperture to the surrounding area.

[0011] The semiconductor laser apparatus of the present invention may also be [5] "the semiconductor laser apparatus according to [4] above, wherein the notch opens in a region of the third surface that is located on the opposite side of the semiconductor laser element in the first direction when viewed from the second direction." According to the semiconductor laser apparatus according to [5], even if the portion of the first bonding member located in the region within the notch is deformed, the axial misalignment of the lens in particular in the third direction is suppressed, so that the lens that adjusts the divergence angle of the laser beam in the third direction can function suitably.

[0012] The semiconductor laser apparatus of the present invention may also be [6] "the semiconductor laser apparatus according to [4] above, wherein the notch opens to a region of the third surface that is located on one side in the third direction when viewed from the second direction." According to the semiconductor laser apparatus according to [6], even if the first bonding member protrudes from the region in the notch to a region on the third surface of the first support, it is possible to prevent the first bonding member from adhering to the light incident surface and light emission surface of the lens.

[0013] The semiconductor laser apparatus of the present invention may also be [7] "the semiconductor laser apparatus according to any one of [1] to [6] above, wherein the first bonding member extends to the outer opening on the second surface side of the first opening." According to the semiconductor laser apparatus according to [7], the portion of the first bonding member that is located in the region within the first opening of the first support functions as a core, thereby improving the bonding strength between the lens and the first support, and suppressing axial misalignment of the lens in a direction perpendicular to the second direction.

[0014] The semiconductor laser apparatus of the present invention may also be [8] "the semiconductor laser apparatus according to any one of [1] to [7] above, wherein the first bonding member is continuously arranged in at least a part of the region between the first end face and the inner opening of the first opening, at least a part of the region within the first opening, and at least a part of the region on the second surface." According to the semiconductor laser apparatus according to [8], the portion of the first bonding member arranged in the region on the second surface of the first support functions as an anchor (stopper), thereby improving the bonding strength between the lens and the first support, and suppressing axial misalignment of the lens in a direction perpendicular to the second direction.

[0015] The semiconductor laser apparatus of the present invention may also be [9] "the semiconductor laser apparatus according to [8] above, wherein in the first bonding member, the portion disposed in at least a part of the region between the first end face and the inner opening of the first aperture is thinner than the portion disposed in at least a part of the region on the second surface." According to the semiconductor laser apparatus according to [9], variations in the thickness of the portion of the first bonding member disposed in the region between the first end face of the lens and the inner opening of the first aperture are less likely to occur, so that axial misalignment of the lens caused by deformation of the first bonding member can be suppressed. Furthermore, since the portion of the first bonding member disposed in the region on the second surface of the first support functions as an anchor, the bonding strength between the lens and the first support can be improved, and axial misalignment of the lens in a direction perpendicular to the second direction can be suppressed.

[0016] The semiconductor laser apparatus of the present invention may also be

[10] "the semiconductor laser apparatus according to any one of [1] to [9] above, wherein the entire inner opening of the first aperture overlaps with the first end face when viewed from the second direction." According to the semiconductor laser apparatus according to

[10] , the first bonding member can easily escape from the region between the first end face of the lens and the inner opening of the first aperture to the region inside the first aperture, thereby suppressing the protrusion of the first bonding member from the region between the first end face of the lens and the inner opening of the first aperture to the surrounding area.

[0017] The semiconductor laser apparatus of the present invention may also be

[11] "the first support having light transmittance, as described in any one of [1] to

[10] above." According to the semiconductor laser apparatus described in

[11] , the state of the portion of the first bonding member arranged in the region between the first end face of the lens and the inner opening of the first aperture, and the state of the portion of the first bonding member arranged in the region within the first aperture of the first support can be confirmed.

[0018] The semiconductor laser apparatus of the present invention may also be

[12] "the semiconductor laser apparatus according to any one of [1] to

[11] above, wherein the thickness of the first support in the second direction is 2 mm or less." According to the semiconductor laser apparatus according to

[12] , the amount of the first bonding member can be reduced while ensuring that the first bonding member is placed in the region within the first opening of the first support.

[0019] The semiconductor laser apparatus of the present invention may also be

[13] "the semiconductor laser apparatus according to any one of [1] to

[12] above, wherein at least a portion of the light-emitting surface is offset from the first support when viewed from the second direction." According to the semiconductor laser apparatus according to

[13] , it is possible to prevent the first bonding member from adhering to the light-emitting surface of the lens.

[0020] The semiconductor laser apparatus of the present invention may also be

[14] "the semiconductor laser apparatus according to any one of [1] to

[13] above, wherein the width of the inner opening of the first aperture in the first direction is greater than or equal to the width of the inner opening of the first aperture in the third direction." According to the semiconductor laser apparatus according to

[14] , even if the portion of the first bonding member located in the region within the first aperture is deformed, the axial misalignment of the lens in the third direction is suppressed in particular, so that the lens that adjusts the divergence angle of the laser beam in the third direction can function suitably.

[0021] The semiconductor laser apparatus of the present invention may also be

[15] "the semiconductor laser apparatus according to any one of [1] to

[14] above, further comprising a second joining member that joins the base and the first support which is formed separately from the base, wherein the first support has a second opening that opens to the first surface and the second surface, at least a part of the inner opening on the first surface side of the second opening overlaps with the side surface of the base when viewed from the second direction, and the second joining member is continuously arranged in at least a part of the region between the side surface and the inner opening of the second opening, and at least a part of the region within the second opening." According to the semiconductor laser apparatus according to

[15] , the respective structures (e.g., shape, material) of the base and the first support can be made suitable for each. In addition, since the second joining member is arranged in the region within the second opening of the first support, the bonding strength between the base and the first support can be improved.

[0022] The semiconductor laser apparatus of the present invention may also be

[16] "the semiconductor laser apparatus according to

[15] above, wherein the second bonding member is continuously arranged in at least a portion of the region between the side surface and the first surface, at least a portion of the region between the side surface and the inner opening of the second opening, and at least a portion of the region within the second opening." The semiconductor laser apparatus according to

[16] can further improve the bonding strength between the base and the first support.

[0023] The semiconductor laser device of the present invention may be

[17] "The semiconductor laser device according to

[15] or

[16] above, wherein on the first surface, an area of a region overlapping with said side surface when viewed from said second direction is larger than an area of a region overlapping with said first end face when viewed from said second direction, and an area of an inner opening of said second opening is larger than an area of an inner opening of said first opening". According to the semiconductor laser device described in

[17] , the stability of support of the first support body and the lens can be improved. Furthermore, for example, in a case where the base and the first support body are bonded after the lens and the first support body are bonded, even if the amount of the second bonding member is increased to facilitate movement of the first support body for centering the lens relative to the semiconductor laser element, protrusion of the second bonding member from the region overlapping the side surface when viewed from the second direction in the first surface of the first support body can be suppressed.

[0024] The semiconductor laser device of the present invention may be

[18] "The semiconductor laser device according to any one of [1] to

[17] above, further comprising: a second support body having a fourth surface located on said second end face side in said second direction and a fifth surface located on a side opposite to said second end face in said second direction, the second support body supporting said lens with respect to said base; and a third bonding member bonding said lens and said second support body, wherein said second support body has a third opening that opens to said fourth surface and said fifth surface, at least a part of an inner opening on said fourth surface side in said third opening overlaps said second end face when viewed from said second direction, and said third bonding member is continuously disposed in at least a part of a region between said second end face and said inner opening of said third opening and at least a part of a region inside said third opening". According to the semiconductor laser device described in

[18] , the stability of lens support can be further improved, and axial displacement of the lens in a direction perpendicular to the second direction can be more reliably suppressed.

[0025] The semiconductor laser device of the present invention may be

[19] "the semiconductor laser device according to the above

[18] , wherein the third bonding member is continuously disposed in at least a part of the region between the second end face and the fourth surface, at least a part of the region between the second end face and the inner opening of the third opening, and at least a part of the region within the third opening". According to the semiconductor laser device described in

[19] , the bonding strength between the lens and the second support can be further improved while suppressing axial misalignment of the lens in a direction perpendicular to the second direction.

[0026] The semiconductor laser device of the present invention may be

[20] "the semiconductor laser device according to any one of the above [1] to

[19] , wherein the semiconductor laser element has a plurality of light emitting points arranged in the second direction, the lens extends in the second direction, and the light incident surface faces the plurality of light emitting points in the first direction". According to the semiconductor laser device described in

[20] , for laser light emitted from each of the plurality of light emitting points, variation in the divergence angle of the laser light in the third direction can be suppressed. Effects of the Invention

[0027] According to the present invention, it becomes possible to provide a semiconductor laser device capable of suppressing axial misalignment of a lens relative to a semiconductor laser element. Brief Description of the Drawings

[0028] [Figure 1] It is a top view of a part of the semiconductor laser device of one embodiment. [Figure 2] It is a side view of a part of the semiconductor laser device shown in FIG. 1. [Figure 3] It is a perspective view of the semiconductor laser element shown in FIG. 1. [Figure 4] It is a side view of the first support shown in FIG. 1. [Figure 5] It is a cross-sectional view of the first support taken along the line V-V shown in FIG. 4. [Figure 6]This is a side view of the second support shown in Figure 1. [Figure 7] This is a cross-sectional view of the second support along the line VII-VII shown in Figure 6. [Figure 8] This is a side view of the first support in a modified example. [Figure 9] This is a side view of the first support in a modified example. [Modes for carrying out the invention]

[0029] Embodiments of the present invention will be described in detail below with reference to the drawings. In each drawing, the same or corresponding parts are denoted by the same reference numerals, and redundant explanations are omitted.

[0030] As shown in Figures 1 and 2, the semiconductor laser device 1 comprises a heat sink 2, a submount (base) 3, a semiconductor laser element 4, a lens 5, a first support 6, and a second support 7. The lens 5 and the first support 6 are joined by a first bonding member 8. The submount 3 and the first support 6 are joined by a second bonding member 9. The lens 5 and the second support 7 are joined by a third bonding member 11. The submount 3 and the second support 7 are joined by a fourth bonding member 12. The first bonding member 8, the second bonding member 9, the third bonding member 11, and the fourth bonding member 12 are, for example, photocurable resins. As the photocurable resin, ultraviolet curing resins, visible light curing resins, etc., can be used. Note that the first bonding member 8, the second bonding member 9, the third bonding member 11, and the fourth bonding member 12 may be thermosetting resins.

[0031] As shown in Figure 3, the semiconductor laser element 4 includes a semiconductor laminate 41 and an anode and a cathode (not shown). The semiconductor laminate 41 is formed in the shape of a rectangular plate with the Z direction as the thickness direction, the X direction as the short side direction, and the Y direction as the long side direction by stacking multiple layers (an active layer and cladding layers on both sides thereof) made of compound semiconductors. The compound semiconductor is, for example, GaAs, AlGaAs, GaN, AlGaN, or a mixed crystal of any of these with In. The semiconductor laser element 4 has multiple light-emitting points 4a that emit laser light. The multiple light-emitting points 4a are arranged in a line in the Y direction on the light-emitting surface 41a of the semiconductor laminate 41 perpendicular to the X direction. As an example, the thickness of the semiconductor laser element 4 in the Z direction is about 0.15 mm, the width of the semiconductor laser element 4 in the X direction is about 2 mm, and the width of the semiconductor laser element 4 in the Y direction is about 10 mm.

[0032] In the semiconductor laser element 4 configured as described above, laser light is emitted from each light-emitting point 4a with the Z direction as the fast axis direction and the Y direction as the slow axis direction. Power can be supplied to the anode and cathode (not shown) of the semiconductor laser element 4 by known configurations.

[0033] As shown in Figures 1 and 2, the semiconductor laser element 4 is placed on the heat sink 2 via a submount 3. In other words, the semiconductor laser element 4 is placed on the submount 3. In this embodiment, the semiconductor laser element 4 is fixed on the mounting surface 31 of the submount 3 which is perpendicular to the Z direction. The heat sink 2 is formed in a block shape from, for example, CuW. The submount 3 is formed in a rectangular plate shape from, for example, Al2O3, SiC, or CuW, with the Z direction as the thickness direction, the X direction as the short side direction, and the Y direction as the long side direction. As an example, the thickness of the submount 3 in the Z direction is about 0.6 mm, the width of the submount 3 in the X direction is about 2 mm, and the width of the submount 3 in the Y direction is about 10 mm. In this embodiment, when viewed from the Z direction, the outer edge of the semiconductor laser element 4 coincides with the outer edge of the submount 3.

[0034] Lens 5 extends in the Y direction and adjusts the divergence angle of the laser beam L emitted from each light-emitting point 4a in at least the Z direction (a third direction perpendicular to both the first and second directions). Lens 5 has a light-incident surface 51, a light-emitting surface 52, a first end surface 53a, and a second end surface 53b. The light-incident surface 51 faces the multiple light-emitting points 4a in the X direction (first direction). A gap is formed between the light-incident surface 51 of lens 5 and the light-emitting surface 41a of semiconductor laser element 4. The distance between the light-incident surface 51 of lens 5 and the light-emitting surface 41a of semiconductor laser element 4 is, for example, about 0.1 mm. The light-emitting surface 52 is located on the opposite side of the light-incident surface 51 in the X direction. The first end surface 53a is located on one side in the Y direction (a second direction perpendicular to the first direction). The second end surface 53b is located on the other side in the Y direction.

[0035] Lens 5 is, for example, a first-axis collimation lens formed from high-refractive-index glass. For example, the light incident surface 51 is a flat surface perpendicular to the X direction, and the light emission surface 52 is a part of a cylindrical surface having a center line parallel to the Y direction. For example, the width of lens 5 in the Z direction is about 1 mm, the width of lens 5 in the X direction is about 1 mm, and the width of lens 5 in the Y direction is about 10 mm. In this embodiment, lens 5 adjusts the divergence angle of the laser beam L in the Z direction and emits laser beam that is parallelized in the Z direction. Lens 5 may, for example, be cylindrical. In that case as well, the region of the outer surface of the cylinder on the semiconductor laser element 4 side in the X direction becomes the light incident surface 51, and the region of the outer surface of the cylinder on the opposite side of the semiconductor laser element 4 in the X direction becomes the light emission surface 52. Furthermore, in that case, the light incident surface 51 and the light emission surface 52 may be continuous (i.e., they may be formed as smoothly connected surfaces without corners).

[0036] The first support 6 and the second support 7 are each formed separately from the submount 3 and support the lens 5 relative to the submount 3. The first support 6 is joined to the lens 5 by a first joining member 8 at its tip 6a end and to the submount 3 by a second joining member 9 at its base 6b end. The second support 7 is joined to the lens 5 by a third joining member 11 at its tip 7a end and to the submount 3 by a fourth joining member 12 at its base 7b end. At least a portion of the light-emitting surface 52 of the lens 5 is offset from the first support 6 and the second support 7 when viewed from the Y direction. Specifically, at least a portion of the light-emitting surface 52 of the lens 5 protrudes from the tip 6a of the first support 6 and the tip 7a of the second support 7 in the direction opposite to the semiconductor laser element 4 in the X direction when viewed from the Y direction.

[0037] As shown in Figures 4 and 5, the first support 6 has a first surface 61, a second surface 62, and a third surface 63. The first surface 61 is located in the Y direction on the side of the first end face 53a of the lens 5 and the first side (side) 32a of the submount 3. The second surface 62 is located in the Y direction on the opposite side of the first end face 53a of the lens 5 and the first side 32a of the submount 3. The third surface 63 is the surface connecting the first surface 61 and the second surface 62. The thickness of the first support 6 in the Y direction (i.e., the distance between the first surface 61 and the second surface 62) is 2 mm or less. The first support 6 is light-transmitting (e.g., ultraviolet light transmittance and / or visible light transmittance). The first support 6 is formed in a rectangular parallelepiped shape from, for example, BK7, synthetic quartz, or borosilicate glass. For example, the width of the first support 6 in the Z direction is approximately 1 mm, the width of the first support 6 in the X direction is approximately 6 mm, and the width of the first support 6 in the Y direction is approximately 1 mm. Furthermore, from the viewpoint of ensuring the strength of the first support 6 and securing space for the first joining member 8 to be placed in the first opening 64 (described later), the thickness of the first support 6 is preferably 0.5 mm or more, and more preferably 1 mm or more.

[0038] The first support 6 has a first opening 64 and a second opening 65. The first opening 64 and the second opening 65 are through holes opening into the first surface 61 and the second surface 62, respectively. These through holes are formed in a cylindrical shape, for example, with a center line parallel to the Y direction. The inner opening 64a of the first opening 64 on the first surface 61 side is included in the first end face 53a of the lens 5 when viewed from the Y direction. In other words, when viewed from the Y direction, the entire inner opening 64a of the first opening 64 overlaps with the first end face 53a of the lens 5. The width of the inner opening 64a in the X direction is equal to the width of the inner opening 64a in the Z direction. The inner opening 64a of the first opening 64 is circular, for example, with a diameter of about 0.2 mm. The outer opening 64b of the first opening 64 is circular, for example, with a diameter of about 0.2 mm. The inner opening 65a of the second aperture 65 on the first surface 61 side is included in the first side surface 32a of the submount 3 when viewed from the Y direction. In other words, when viewed from the Y direction, the entire inner opening 65a of the second aperture 65 overlaps with the first side surface 32a of the submount 3. The width of the inner opening 65a in the X direction is greater than the width of the inner opening 65a in the Z direction. The inner opening 65a and outer opening 65b of the second aperture 65 each have an elliptical shape, for example, with a width of about 0.4 mm in the X direction and a width of about 0.2 mm in the Z direction. The second aperture 65 is located on the submount 3 side relative to the lens 5 at a point half the width of the first support 6 in the X direction.

[0039] The first joining member 8 is continuously arranged in at least a portion of region R11, at least a portion of region R12, and at least a portion of region R13. Region R11 is the region between the first end face 53a of the lens 5 and the plane including the first surface 61 of the first support 6. Region R12 is the region within the first opening 64 of the first support 6. Region R13 is the region on the plane including the second surface 62 of the first support 6. In other words, the first joining member 8 includes a portion 81 located in region R11, a portion 82 located in region R12, and a portion 83 located in region R13, and these portions 81, 82, and 83 are integrally formed. In this embodiment, the first joining member 8 is arranged over the entirety of region R12 within the first opening 64.

[0040] In this embodiment, region R11 includes region R11a and region R11b. Region R11a is the region between the first end face 53a of the lens 5 and the inner opening 64a of the first opening 64. In other words, region R11a is the region of region R11 that overlaps with the inner opening 64a of the first opening 64 when viewed from the Y direction. Region R11b is the region between the first end face 53a of the lens 5 and the first surface 61 of the first support 6. In other words, region R11b is the annular region of region R11 that surrounds the inner opening 64a of the first opening 64 when viewed from the Y direction. Part 81 of the first joining member 8 includes part 81a located in region R11a and an annular part 81b located in region R11b. Region R13 includes region R13a and region R13b. Region R13a is the region outside the outer opening 64b of the first opening 64 (opposite the first end face 53a in the Y direction). In other words, region R13a is the region of region R13 that overlaps with the outer opening 64b of the first opening 64 when viewed from the Y direction. Region R13b is the region on the second surface 62 of the first support 6. In other words, region R13b is the annular region of region R13 that surrounds the outer opening 64b of the first opening 64 when viewed from the Y direction. Part 83 of the first joining member 8 includes part 83a located in region R13a and an annular part 83b located in region R13b. Parts 81a, 81b, 82, 83a, and 83b of the first joining member 8 are formed integrally. For example, the width of portion 81b in the radial direction (the distance between the inner edge and outer edge of portion 81b when viewed from the Y direction) is approximately 0.1 to 0.2 mm.

[0041] In the first joining member 8, the portion 81 (i.e., portions 81a, 81b) located in the region R11 between the first end face 53a of the lens 5 and the plane including the first surface 61 of the first support 6 is thinner than the portion 83 (i.e., portions 83a, 83b) located in the region R13 on the plane including the second surface 62 of the first support 6. In other words, the maximum thickness of portion 81 in the Y direction (i.e., the distance between the first end face 53a of the lens 5 and the first surface 61 of the first support 6) is smaller than the maximum thickness of portion 83 in the Y direction. For example, the maximum thickness of portion 81 in the Y direction is about 0.1 mm, and the maximum thickness of portion 83 in the Y direction is about 0.2 mm.

[0042] The second joining member 9 is continuously arranged in at least a portion of region R21, at least a portion of region R22, and at least a portion of region R23. Region R21 is the region between the first side surface 32a of the submount 3 and the plane including the first surface 61 of the first support 6. Region R22 is the region within the second opening 65 of the first support 6. Region R23 is the region on the plane including the second surface 62 of the first support 6. In other words, the second joining member 9 includes a portion 91 located in region R21, a portion 92 located in region R22, and a portion 93 located in region R23, and these portions 91, 92, and 93 are integrally formed. In this embodiment, the second joining member 9 is arranged over the entirety of region R22 within the second opening 65.

[0043] In this embodiment, region R21 includes region R21a and region R21b. Region R21a is the region between the first side surface 32a of the submount 3 and the inner opening 65a of the second opening 65. In other words, region R21a is the region of region R21 that overlaps with the inner opening 65a of the second opening 65 when viewed from the Y direction. Region R21b is the region between the first side surface 32a of the submount 3 and the first surface 61 of the first support 6. In other words, region R21b is the annular region of region R21 that surrounds the inner opening 65a of the second opening 65 when viewed from the Y direction. The portion 91 of the second joining member 9 includes the portion 91a located in region R21a and the annular portion 91b located in region R21b. Region R23 includes region R23a and region R23b. Region R23a is the region outside the outer opening 65b of the second opening 65 (opposite to the first side surface 32a in the Y direction). In other words, region R23a is the region of region R23 that overlaps with the outer opening 65b of the second opening 65 when viewed from the Y direction. Region R23b is the region on the second surface 62 of the first support 6. In other words, region R23b is the annular region of region R23 that surrounds the outer opening 65b of the second opening 65 when viewed from the Y direction. Part 93 of the second joining member 9 includes a part 93a located in region R23a and an annular part 93b located in region R23b. Parts 91a, 91b, 92, 93a, and 93b of the second joining member 9 are formed integrally. For example, the width of portion 91b in the radial direction (the distance between the inner edge and outer edge of portion 91b when viewed from the Y direction) is approximately 0.1 to 0.2 mm.

[0044] In the second joining member 9, the portion 91 (i.e., portions 91a, 91b) located in the region R21 between the first side surface 32a of the submount 3 and the plane including the first surface 61 of the first support 6 is thinner than the portion 93 (i.e., portions 93a, 93b) located in the region R23 on the plane including the second surface 62 of the first support 6. In other words, the maximum thickness of portion 91 in the Y direction (i.e., the distance between the first side surface 32a of the submount 3 and the first surface 61 of the first support 6) is smaller than the maximum thickness of portion 93 in the Y direction.

[0045] On the first surface 61 of the first support 6, the area of ​​region 61b that overlaps with the first side surface 32a of the submount 3 when viewed from the Y direction is larger than the area of ​​region 61a that overlaps with the first end surface 53a of the lens 5 when viewed from the Y direction. The area of ​​the inner opening 65a of the second aperture 65 is larger than the area of ​​the inner opening 64a of the first aperture 64.

[0046] As shown in Figures 6 and 7, the second support 7 has a fourth surface 71, a fifth surface 72, and a sixth surface 73. The fourth surface 71 is located in the Y direction on the side of the second end face 53b of the lens 5 and the second side surface 32b of the submount 3. The fifth surface 72 is located in the Y direction on the opposite side from the second end face 53b of the lens 5 and the second side surface 32b of the submount 3. The sixth surface 73 is the surface connecting the fourth surface 71 and the fifth surface 72. The thickness of the second support 7 in the Y direction (i.e., the distance between the fourth surface 71 and the fifth surface 72) is 2 mm or less. The second support 7 is light-transmitting (e.g., ultraviolet light transmittance and / or visible light transmittance). The second support 7 is formed in a rectangular parallelepiped shape from, for example, BK7, synthetic quartz, or borosilicate glass. For example, the width of the second support 7 in the Z direction is approximately 1 mm, the width of the second support 7 in the X direction is approximately 6 mm, and the width of the second support 7 in the Y direction is approximately 1 mm. Furthermore, from the viewpoint of ensuring the strength of the second support 7 and securing space for the third joining member 11 to be placed in the third opening 74 (described later), the thickness of the second support 7 is preferably 0.5 mm or more, and more preferably 1 mm or more.

[0047] The second support 7 has a third opening 74 and a fourth opening 75. The third opening 74 and the fourth opening 75 are through holes opening into the fourth surface 71 and the fifth surface 72, respectively. These through holes are formed in a cylindrical shape, for example, with a center line parallel to the Y direction. The inner opening 74a of the third opening 74 on the fourth surface 71 side is included in the second end face 53b of the lens 5 when viewed from the Y direction. In other words, when viewed from the Y direction, the entire inner opening 74a of the third opening 74 overlaps with the second end face 53b of the lens 5. The width of the inner opening 74a in the X direction is equal to the width of the inner opening 74a in the Z direction. The inner opening 74a of the third opening 74 is circular, for example, with a diameter of about 0.2 mm. The outer opening 74b of the third opening 74 is circular, for example, with a diameter of about 0.2 mm. The inner opening 75a on the fourth surface 71 side of the fourth aperture 75 is included in the second side surface 32b of the submount 3 when viewed from the Y direction. In other words, when viewed from the Y direction, the entire inner opening 75a of the fourth aperture 75 overlaps with the second side surface 32b of the submount 3. The width of the inner opening 75a in the X direction is greater than the width of the inner opening 75a in the Z direction. The inner opening 75a and outer opening 75b of the fourth aperture 75 each have an elliptical shape, for example, with a width of about 0.4 mm in the X direction and a width of about 0.2 mm in the Z direction. The fourth aperture 75 is located on the submount 3 side relative to the lens 5 at a point half the width of the second support 7 in the X direction.

[0048] The third joining member 11 is continuously arranged in at least a portion of region R31, at least a portion of region R32, and at least a portion of region R33. Region R31 is the region between the second end face 53b of the lens 5 and the plane including the fourth surface 71 of the second support 7. Region R32 is the region within the third opening 74 of the second support 7. Region R33 is the region on the plane including the fifth surface 72 of the second support 7. In other words, the third joining member 11 includes a portion 111 located in region R31, a portion 112 located in region R32, and a portion 113 located in region R33, and these portions 111, 112, and 113 are integrally formed. In this embodiment, the third joining member 11 is arranged over the entirety of region R32 within the third opening 74.

[0049] In this embodiment, region R31 includes region R31a and region R31b. Region R31a is the region between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74. In other words, region R31a is the region of region R31 that overlaps with the inner opening 74a of the third opening 74 when viewed from the Y direction. Region R31b is the region between the second end face 53b of the lens 5 and the fourth surface 71 of the second support 7. In other words, region R31b is the annular region of region R31 that surrounds the inner opening 74a of the third opening 74 when viewed from the Y direction. Part 111 of the third joining member 11 includes part 111a located in region R31a and an annular part 111b located in region R31b. Region R33 includes region R33a and region R33b. Region R33a is the region outside the outer opening 74b of the third opening 74 (opposite the second end face 53b in the Y direction). In other words, region R33a is the region of region R33 that overlaps with the outer opening 74b of the third opening 74 when viewed from the Y direction. Region R33b is the region on the fifth surface 72 of the second support 7. In other words, region R33b is the annular region of region R33 that surrounds the outer opening 74b of the third opening 74 when viewed from the Y direction. Part 113 of the third joining member 11 includes a part 113a located in region R33a and an annular part 113b located in region R33b. Parts 111a, 111b, 112, 113a, and 113b of the third joining member 11 are formed integrally. For example, the width of portion 111b in the radial direction (the distance between the inner edge and outer edge of portion 111b when viewed from the Y direction) is approximately 0.1 to 0.2 mm.

[0050] In the third joining member 11, the portion 111 (i.e., portions 111a, 111b) located in the region R31 between the second end face 53b of the lens 5 and the plane including the fourth surface 71 of the second support 7 is thinner than the portion 113 (i.e., portions 113a, 113b) located in the region R33 on the plane including the fifth surface 72 of the second support 7. In other words, the maximum thickness of portion 111 in the Y direction (i.e., the distance between the second end face 53b of the lens 5 and the fourth surface 71 of the second support 7) is smaller than the maximum thickness of portion 113 in the Y direction. For example, the maximum thickness of portion 111 in the Y direction is about 0.1 mm, and the maximum thickness of portion 113 in the Y direction is about 0.2 mm.

[0051] The fourth joining member 12 is continuously positioned in at least a portion of region R41, at least a portion of region R42, and at least a portion of region R43. Region R41 is the region between the second side surface 32b of the submount 3 and the plane including the fourth surface 71 of the second support 7. Region R42 is the region within the fourth opening 75 of the second support 7. Region R43 is the region on the plane including the fifth surface 72 of the second support 7. In other words, the fourth joining member 12 includes a portion 121 positioned in region R41, a portion 122 positioned in region R42, and a portion 123 positioned in region R43, and these portions 121, 122, and 123 are integrally formed. In this embodiment, the fourth joining member 12 is positioned over the entirety of region R42 within the fourth opening 75.

[0052] In this embodiment, region R41 includes region R41a and region R41b. Region R41a is the region between the second side surface 32b of the submount 3 and the inner opening 75a of the fourth opening 75. In other words, region R41a is the region of region R41 that overlaps with the inner opening 75a of the fourth opening 75 when viewed from the Y direction. Region R41b is the region between the second side surface 32b of the submount 3 and the fourth surface 71 of the second support 7. In other words, region R41b is the annular region of region R41 that surrounds the inner opening 75a of the fourth opening 75 when viewed from the Y direction. The portion 121 of the fourth joining member 12 includes the portion 121a located in region R41a and the annular portion 121b located in region R41b. Region R43 includes region R43a and region R43b. Region R43a is the region outside the outer opening 75b of the fourth opening 75 (opposite to the second side surface 32b in the Y direction). In other words, region R43a is the region of region R43 that overlaps with the outer opening 75b of the fourth opening 75 when viewed from the Y direction. Region R43b is the region on the fifth surface 72 of the second support 7. In other words, region R43b is the annular region of region R43 that surrounds the outer opening 75b of the fourth opening 75 when viewed from the Y direction. Part 123 of the fourth joining member 12 includes a part 123a located in region R43a and an annular part 123b located in region R43b. Parts 121a, 121b, 122, 123a, and 123b of the fourth joining member 12 are formed integrally. For example, the width of portion 121b in the radial direction (the distance between the inner edge and outer edge of portion 121b when viewed from the Y direction) is approximately 0.1 to 0.2 mm.

[0053] In the fourth joining member 12, the portion 121 (i.e., portions 121a, 121b) located in the region R41 between the second side surface 32b of the submount 3 and the plane including the fourth surface 71 of the second support 7 is thinner than the portion 123 (i.e., portions 123a, 123b) located in the region R43 on the plane including the fifth surface 72 of the second support 7. In other words, the maximum thickness of portion 121 in the Y direction (i.e., the distance between the second side surface 32b of the submount 3 and the fourth surface 71 of the second support 7) is smaller than the maximum thickness of portion 123 in the Y direction.

[0054] On the fourth surface 71 of the second support 7, the area 71b that overlaps with the second side surface 32b of the submount 3 when viewed from the Y direction is larger than the area 71a that overlaps with the second end surface 53b of the lens 5 when viewed from the Y direction. The area of ​​the inner opening 75a of the fourth aperture 75 is larger than the area of ​​the inner opening 74a of the third aperture 74.

[0055] As described above, in the semiconductor laser device 1, the first support 6 that supports the lens 5 with respect to the submount 3 has a first opening 64 that opens to the first surface 61 and the second surface 62, and the entire inner opening 64a of the first opening 64 overlaps with the first end surface 53a of the lens 5 when viewed from the Y direction. In this state, the first joining member 8 is continuously arranged in at least a part of the region R11a between the first end surface 53a of the lens 5 and the inner opening 64a of the first opening 64, at least a part of the region R12 within the first opening 64 of the first support 6, and at least a part of the region R13b on the second surface 62 of the first support 6. This allows the portion of the first joining member 8 located in the region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first opening 64 to be thinned while suppressing the protrusion of the first joining member 8 from the region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first opening 64 (i.e., suppressing the amount of portion 81b located in the region R11b between the first end face 53a of the lens 5 and the first surface 61 of the first support 6). Therefore, axial misalignment of the lens 5 caused by deformation of the first joining member 8 (e.g., swelling, thermal expansion and thermal contraction) is suppressed. Furthermore, since the portion 82 of the first joining member 8 located in region R12 within the first opening 64 of the first support 6 functions as a core, and the portion 83b of the first joining member 8 located in region R13b on the second surface 62 of the first support 6 functions as an anchor (stopper), the bonding strength between the lens 5 and the first support 6 is improved, and axial misalignment of the lens 5 in the direction perpendicular to the Y direction is suppressed.

[0056] Similarly, in the semiconductor laser apparatus 1, the second support 7 that supports the lens 5 with respect to the submount 3 has a third opening 74 that opens to the fourth surface 71 and the fifth surface 72, and the entire inner opening 74a of the third opening 74 overlaps with the second end face 53b of the lens 5 when viewed from the Y direction. In this state, the third joining member 11 is continuously arranged in at least a portion of the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74, at least a portion of the region R32 within the third opening 74 of the second support 7, and at least a portion of the region R33b on the fifth surface 72 of the second support 7. This allows the third joining member 11 to protrude outwards from the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74 (i.e., while suppressing the amount of portion 111b located in the region R31b between the second end face 53b of the lens 5 and the fourth surface 71 of the second support 7), while also making the portion 111a located in the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74 thinner. Therefore, axial misalignment of the lens 5 caused by deformation of the third joining member 11 is suppressed. Moreover, since the portion 112 located in the region R32 within the third opening 74 of the second support 7 functions as a core, and the portion 113b located in the region R33b on the fifth surface 72 of the second support 7 functions as an anchor, the bonding strength between the lens 5 and the second support 7 is improved, and axial misalignment of the lens 5 in the direction perpendicular to the Y direction is suppressed.

[0057] As described above, the semiconductor laser device 1 can suppress the axial misalignment of the lens 5 relative to the semiconductor laser element 4. In particular, in the semiconductor laser device 1, the lens 5 adjusts the divergence angle of the laser light L emitted from each light-emitting point 4a in the Z direction. Therefore, the tolerance for axial misalignment in the X direction is stricter than the tolerance for axial misalignment in the Y direction, and the tolerance for axial misalignment in the Z direction is stricter than the tolerance for axial misalignment in the X direction. For this reason, the above structure, which can suppress the axial misalignment of the lens 5 in a direction perpendicular to the Y direction, is extremely effective.

[0058] Furthermore, in the semiconductor laser device 1, the first aperture 64 is a through-hole opening in the first surface 61 and the second surface 62. This makes it easier for the first bonding member 8 to remain in region R12 within the through-hole, thereby improving the bonding strength between the lens 5 and the first support 6. In addition, it is possible to suppress the formation of air pockets between the first support 6 and the first bonding member 8, and as a result, it is possible to suppress axial misalignment of the lens 5 caused by thermal expansion and contraction of air in the air pockets.

[0059] Similarly, in the semiconductor laser device 1, the third aperture 74 is a through-hole opening into the fourth surface 71 and the fifth surface 72. This makes it easier for the third bonding member 11 to remain in region R32 within the through-hole, thereby improving the bonding strength between the lens 5 and the second support 7. Furthermore, it is possible to suppress the formation of air pockets between the second support 7 and the third bonding member 11, and as a result, it is possible to suppress axial misalignment of the lens 5 caused by thermal expansion and contraction of air in the air pockets.

[0060] Furthermore, in the semiconductor laser apparatus 1, in the first bonding member 8, a portion 81 located in at least a part of the region R11 between the first end face 53a of the lens 5 and the plane including the first surface 61 of the first support 6 is thinner than a portion 83 located in at least a part of the region R13 on the plane including the second surface 62 of the first support 6. As a result, variations in the thickness of the portion 81 located in the region R11 between the first end face 53a of the lens 5 and the plane including the first surface 61 of the first support 6 are less likely to occur, thereby suppressing axial misalignment of the lens 5 caused by deformation of the first bonding member 8. In addition, since the portion 83b located in the region R13b on the second surface 62 of the first support 6 functions as an anchor, the bonding strength between the lens 5 and the first support 6 can be improved, and axial misalignment of the lens 5 in a direction perpendicular to the Y direction can be suppressed.

[0061] Similarly, in the semiconductor laser apparatus 1, in the third bonding member 11, the portion 111 located in at least a part of the region R31 between the second end face 53b of the lens 5 and the plane including the fourth surface 71 of the second support 7 is thinner than the portion 113 located in at least a part of the region R33 on the plane including the fifth surface 72 of the second support 7. As a result, variations in the thickness of the portion 111 located in at least a part of the region R31 between the second end face 53b of the lens 5 and the plane including the fourth surface 71 of the second support 7 are less likely to occur, thereby suppressing axial misalignment of the lens 5 caused by deformation of the third bonding member 11. In addition, since the portion 113b located in the region R33b on the fifth surface 72 of the second support 7 functions as an anchor, the bonding strength between the lens 5 and the second support 7 can be improved, and axial misalignment of the lens 5 in a direction perpendicular to the Y direction can be suppressed.

[0062] Furthermore, in the semiconductor laser device 1, the entire inner opening 64a of the first aperture 64 overlaps with the first end face 53a of the lens 5 when viewed from the Y direction. This makes it easier for the first bonding member 8 to escape from the region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first aperture 64 to the region R12 within the first aperture 64, thereby suppressing the protrusion of the first bonding member 8 from the region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first aperture 64 to the surrounding area. Therefore, it is possible to reliably prevent the first bonding member 8 from adhering to the light emission surface 41a of the semiconductor laser element 4, and to the light incident surface 51 and light emission surface 52 of the lens 5. In particular, in this embodiment, since the distance between the light incident surface 51 of the lens 5 and the light emission surface 41a of the semiconductor laser element 4 is very small, less than 1 mm, the above configuration that can suppress the protrusion of the first bonding member 8 to the surrounding area is extremely effective.

[0063] Similarly, in the semiconductor laser device 1, the entire inner opening 74a of the third aperture 74 overlaps with the second end face 53b of the lens 5 when viewed from the Y direction. This makes it easier for the third bonding member 11 to escape from the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third aperture 74 to the region R32 within the third aperture 74, thereby suppressing the protrusion of the third bonding member 11 from the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third aperture 74 to the surrounding area. Therefore, it is possible to reliably prevent the third bonding member 11 from adhering to the light emission surface 41a of the semiconductor laser element 4, and to the light incident surface 51 and light emission surface 52 of the lens 5. In particular, in this embodiment, since the distance between the light incident surface 51 of the lens 5 and the light emission surface 41a of the semiconductor laser element 4 is very small, less than 1 mm, the above configuration that can suppress the protrusion of the third bonding member 11 to the surrounding area is extremely effective.

[0064] Furthermore, in the semiconductor laser device 1, the first support 6 is light-transmitting. This allows the state of portion 81 of the first bonding member 8 located in the region R11 between the first end face 53a of the lens 5 and the plane including the first surface 61 of the first support 6, and portion 82 of the first bonding member 8 located in the region R12 within the first opening 64 of the first support 6 to be confirmed. In addition, if the first bonding member 8 and the second bonding member 9 are photocurable resins, the first bonding member 8 and the second bonding member 9 can be cured by irradiation with light through the first support 6.

[0065] Similarly, in the semiconductor laser device 1, the second support 7 is light-transmitting. This allows us to check the state of the portion 111 of the third bonding member 11 located in the region R31 between the second end face 53b of the lens 5 and the plane including the fourth surface 71 of the second support 7, and the state of the portion 112 of the third bonding member 11 located in the region R32 within the third opening 74 of the second support 7. Furthermore, if the third bonding member 11 and the fourth bonding member 12 are made of photocurable resin, the third bonding member 11 and the fourth bonding member 12 can be cured by irradiation with light through the second support 7.

[0066] Furthermore, in the semiconductor laser device 1, the thickness of the first support 6 in the Y direction is 2 mm or less. This allows for a reduction in the amount of the first bonding member 8 while ensuring that the first bonding member 8 is reliably positioned in the region R12 within the first opening 64 of the first support 6.

[0067] Similarly, in the semiconductor laser device 1, the thickness of the second support 7 in the Y direction is 2 mm or less. This allows the amount of the third bonding member 11 to be reduced while ensuring that the third bonding member 11 is reliably positioned in the region R32 within the third opening 74 of the second support 7.

[0068] Furthermore, in the semiconductor laser device 1, at least a portion of the light-emitting surface 52 of the lens 5 is offset from the first support 6 when viewed from the Y direction. That is, at least a portion of the light-emitting surface 52 of the lens 5 protrudes from the first support 6 in the X direction. This prevents the first bonding member 8 from adhering to the light-emitting surface 52 of the lens 5.

[0069] Similarly, in the semiconductor laser device 1, at least a portion of the light-emitting surface 52 of the lens 5 is offset from the second support 7 when viewed from the Y direction. That is, at least a portion of the light-emitting surface 52 of the lens 5 protrudes from the second support 7 in the X direction. This prevents the third bonding member 11 from adhering to the light-emitting surface 52 of the lens 5.

[0070] Furthermore, in the semiconductor laser device 1, the width of the inner opening 64a of the first aperture 64 in the X direction is equal to the width of the inner opening 64a of the first aperture 64 in the Z direction. As a result, even if the portion 82 of the first bonding member 8 located in region R12 within the first aperture 64 deforms, the axial misalignment of the lens 5, especially in the Z direction, is suppressed, allowing the lens 5, which adjusts the divergence angle of the laser beam L in the Z direction, to function effectively.

[0071] Similarly, in the semiconductor laser device 1, the width of the inner opening 74a of the third aperture 74 in the X direction is equal to the width of the inner opening 74a of the third aperture 74 in the Z direction. As a result, even if the portion 112 of the third bonding member 11 located in region R32 within the third aperture 74 deforms, the axial misalignment of the lens 5, especially in the Z direction, is suppressed, allowing the lens 5, which adjusts the divergence angle of the laser beam L in the Z direction, to function effectively.

[0072] Furthermore, in the semiconductor laser apparatus 1, the first support 6, which is formed separately from the submount 3, has a second opening 65 that opens to the first surface 61 and the second surface 62, and the entire inner opening 65a of the second opening 65 overlaps with the first side surface 32a of the submount 3 when viewed from the Y direction. In this state, the second joining member 9 is continuously arranged in at least a part of the region R21a between the first side surface 32a of the submount 3 and the inner opening 65a of the second opening 65, at least a part of the region R22 within the second opening 65 of the first support 6, and at least a part of the region R23b on the second surface 62 of the first support 6. This makes it possible to make the respective structures (e.g., shape, material) of the submount 3 and the first support 6 suitable for each. In addition, because the second joining member 9 is arranged in the region R22 within the second opening 65 of the first support 6, the bonding strength between the submount 3 and the first support 6 can be improved.

[0073] Similarly, in the semiconductor laser apparatus 1, the second support 7, which is formed separately from the submount 3, has a fourth opening 75 that opens to the fourth surface 71 and the fifth surface 72, and the entire inner opening 75a of the fourth opening 75 overlaps with the second side surface 32b of the submount 3 when viewed from the Y direction. In this state, the fourth bonding member 12 is continuously arranged in at least a portion of the region R41a between the second side surface 32b of the submount 3 and the inner opening 75a of the fourth opening 75, at least a portion of the region R42 within the fourth opening 75 of the second support 7, and at least a portion of the region R43b on the fifth surface 72 of the second support 7. This makes it possible to make the respective structures of the submount 3 and the second support 7 suitable for each. In addition, since the fourth bonding member 12 is arranged in the region R42 within the fourth opening 75 of the second support 7, the bonding strength between the submount 3 and the second support 7 can be improved.

[0074] Furthermore, in the semiconductor laser apparatus 1, on the first surface 61 of the first support 6, the area 61b of the region that overlaps with the first side surface 32a of the submount 3 when viewed from the Y direction is larger than the area 61a of the region that overlaps with the first end surface 53a of the lens 5 when viewed from the Y direction, and the area of ​​the inner opening 65a of the second opening 65 is larger than the area of ​​the inner opening 64a of the first opening 64. This improves the stability of the support of the first support 6 and the lens 5. Also, for example, when joining the submount 3 and the first support 6 after joining the lens 5 and the first support 6, even if the amount of the second joining member 9 is increased to facilitate movement of the first support 6 for centering the lens 5 with respect to the semiconductor laser element 4, it is possible to suppress the second joining member 9 from protruding from the region 61b of the first surface 61 of the first support 6 that overlaps with the first side surface 32a of the submount 3 when viewed from the Y direction.

[0075] Similarly, in the semiconductor laser apparatus 1, on the fourth surface 71 of the second support 7, the area 71b that overlaps with the second side surface 32b of the submount 3 when viewed from the Y direction is larger than the area 71a that overlaps with the second end face 53b of the lens 5 when viewed from the Y direction, and the area of ​​the inner opening 75a of the fourth opening 75 is larger than the area of ​​the inner opening 74a of the third opening 74. This improves the stability of the support of the second support 7 and the lens 5. Furthermore, for example, when joining the submount 3 and the second support 7 after joining the lens 5 and the second support 7, even if the amount of the fourth joining member 12 is increased to facilitate movement of the second support 7 for centering the lens 5 relative to the semiconductor laser element 4, it is possible to suppress the fourth joining member 12 from protruding from the area 71b of the fourth surface 71 of the second support 7 that overlaps with the second side surface 32b of the submount 3 when viewed from the Y direction.

[0076] Furthermore, in the semiconductor laser device 1, the semiconductor laser element 4 has multiple light-emitting points 4a aligned in the Y direction, the lens 5 extends in the Y direction, and the light incident surface 51 of the lens 5 faces the multiple light-emitting points 4a in the X direction. This makes it possible to suppress variations in the divergence angle of the laser beam L emitted from each light-emitting point 4a in the Z direction.

[0077] Furthermore, in the semiconductor laser device 1, the second aperture 65 is positioned on the submount 3 side relative to the lens 5, beyond the point where half the width of the first support 6 is located in the X direction. This makes it difficult for the second bonding member 9 to reach the light-emitting surface 41a of the semiconductor laser element 4. In addition, adjusting the position of the first support 6 makes it easier to align the laser beam L.

[0078] Similarly, in the semiconductor laser device 1, the fourth aperture 75 is positioned on the submount 3 side relative to the lens 5, beyond the point where half the width of the second support 7 is located in the X direction. This makes it difficult for the fourth bonding member 12 to reach the light-emitting surface 41a of the semiconductor laser element 4. In addition, adjusting the position of the second support 7 makes it easier to align the laser beam L.

[0079] The present invention is not limited to the embodiments described above. For example, as shown in Figure 8(a), in the first support 6, at least a portion of the inner opening 64a of the first opening 64 should overlap with the first end face 53a of the lens 5 when viewed from the Y direction. Also, in the first support 6, at least a portion of the inner opening 65a of the second opening 65 should overlap with the first side surface 32a of the submount 3 when viewed from the Y direction.

[0080] Similarly, in the second support 7, it is sufficient that at least a portion of the inner opening 74a of the third opening 74 overlaps with the second end face 53b of the lens 5 when viewed from the Y direction. Also, in the second support 7, it is sufficient that at least a portion of the inner opening 75a of the fourth opening 75 overlaps with the second side surface 32b of the submount 3 when viewed from the Y direction.

[0081] Furthermore, as shown in Figure 8(b), the width of the inner opening 64a of the first opening 64 in the X direction may be greater than the width of the inner opening 64a of the first opening 64 in the Z direction. In other words, the width of the inner opening 64a of the first opening 64 in the X direction should be greater than or equal to the width of the inner opening 64a of the first opening 64 in the Z direction. According to this, even if the portion 82 of the first joining member 8 located in region R12 within the first opening 64 deforms, the axial displacement of the lens 5, especially in the Z direction, is suppressed, so that the lens 5 that adjusts the divergence angle of the laser beam L in the Z direction can function appropriately. As an example, the inner opening 64a and outer opening 64b of the first opening 64 have the same shape when viewed from the Y direction, the width of the inner opening 64a and outer opening 64b in the X direction is about 0.4 mm, and the width of the inner opening 64a and outer opening 64b in the Z direction is about 0.2 mm.

[0082] Similarly, the width of the inner opening 74a of the third opening 74 in the X direction may be greater than the width of the inner opening 74a of the third opening 74 in the Z direction. In other words, the width of the inner opening 74a of the third opening 74 in the X direction should be greater than or equal to the width of the inner opening 74a of the third opening 74 in the Z direction. According to this, even if the portion 112 of the third joining member 11 located in region R32 within the third opening 74 deforms, the axial displacement of the lens 5, especially in the Z direction, is suppressed, so that the lens 5 that adjusts the divergence angle of the laser beam L in the Z direction can function appropriately. As an example, the inner opening 74a and outer opening 74b of the third opening 74 have the same shape when viewed from the Y direction, the width of the inner opening 74a and outer opening 74b in the X direction is about 0.4 mm, and the width of the inner opening 74a and outer opening 74b in the Z direction is about 0.2 mm.

[0083] Furthermore, as shown in Figures 9(a) and (b), the first opening 64 may be a notch that opens to the first surface 61 and the second surface 62 and also to the third surface 63. This makes it easier for the first joining member 8 to escape from the region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first opening 64 towards the notch, thereby suppressing the protrusion of the first joining member 8 from the region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first opening 64 outwards. In addition, it is possible to suppress the formation of an air pocket between the first support 6 and the first joining member 8, and as a result, it is possible to suppress axial misalignment of the lens 5 caused by thermal expansion and contraction of the air in the air pocket. As an example, the inner opening 64a and outer opening 64b of the first opening 64 have the same shape when viewed from the Y direction, and the width (maximum width) of the inner opening 64a and outer opening 64b in the direction perpendicular to the depth direction of the notch is about 0.2 mm, while the width (maximum width) of the inner opening 64a and outer opening 64b in the direction parallel to the depth direction of the notch is about 0.5 mm.

[0084] Similarly, the third opening 74 may be a notch that opens to the fourth surface 71 and the fifth surface 72 and also to the sixth surface 73. This makes it easier for the third joining member 11 to escape from the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74 towards the notch, thereby suppressing the protrusion of the third joining member 11 from the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74 outwards. Furthermore, it is possible to suppress the formation of an air pocket between the second support 7 and the third joining member 11, and as a result, it is possible to suppress axial misalignment of the lens 5 caused by thermal expansion and contraction of the air in the air pocket. As an example, the inner opening 74a and outer opening 74b of the third opening 74 have the same shape when viewed from the Y direction, and the width (maximum width) of the inner opening 74a and outer opening 74b in the direction perpendicular to the depth direction of the notch is about 0.2 mm, while the width (maximum width) of the inner opening 74a and outer opening 74b in the direction parallel to the depth direction of the notch is about 0.5 mm.

[0085] In particular, as shown in Figure 9(a), if the notch, which is the first opening 64, opens into a region 63a of the third surface 63 of the first support 6 that is located on one side in the Z direction when viewed from the Y direction, the following effect is achieved. That is, even if the first bonding member 8 protrudes from the region R12 inside the notch into the region on the third surface 63 of the first support 6, it is possible to prevent the first bonding member 8 from adhering to the light incident surface 51 and the light emission surface 52 of the lens 5. This is also true when the third opening 74 is a notch.

[0086] Furthermore, as shown in Figure 9(b), if the notch, which is the first opening 64, opens into a region 63b of the third surface 63 of the first support 6 that is located on the opposite side of the semiconductor laser element 4 in the X direction when viewed from the Y direction, the following effect is achieved. That is, even if the portion 82 of the first joining member 8 located in the region R12 within the notch deforms, the axial misalignment of the lens 5, especially in the Z direction, is suppressed, so that the lens 5, which adjusts the divergence angle of the laser beam L in the Z direction, can function appropriately. The same is true when the third opening 74 is a notch.

[0087] Furthermore, the first joining member 8 does not need to be positioned in at least a portion of region R13b on the second surface 62 of the first support 6, as long as it is continuously positioned in at least a portion of region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first opening 64, and in at least a portion of region R12 within the first opening 64 of the first support 6. In that case, if the first joining member 8 extends to the outer opening 64b of the second surface 62 in the first opening 64, the portion 82 of the first joining member 8 positioned in region R12 within the first opening 64 of the first support 6 functions as a core, thereby improving the bonding strength between the lens 5 and the first support 6, and suppressing axial misalignment of the lens 5 in a direction perpendicular to the Y direction. However, the first joining member 8 does not need to extend to the outer opening 64b of the first opening 64, as long as it is continuously positioned in at least a portion of region R11a and at least a portion of region R12.

[0088] Furthermore, the first joining member 8 does not need to be positioned in at least a portion of the region R11b between the first end face 53a of the lens 5 and the first surface 61 of the first support 6, as long as it is continuously positioned in at least a portion of the region R11a between the first end face 53a of the lens 5 and the inner opening 64a of the first opening 64, and in at least a portion of the region R12 within the first opening 64 of the first support 6. In this case as well, it is possible to improve the bonding strength between the lens 5 and the first support 6 while suppressing axial misalignment of the lens 5 in a direction perpendicular to the Y direction. Note that the portion 81b of the first joining member 8 does not need to be annular, and the shape of the portion 81b is not particularly limited. However, from the viewpoint of ensuring adhesive strength between the lens 5 and the first support 6, it is preferable that the portion 81b is annular.

[0089] Similarly, the third joining member 11 does not need to be located in at least a portion of the region R33b on the fifth surface 72 of the second support 7, as long as it is continuously located in at least a portion of the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74, and in at least a portion of the region R32 within the third opening 74 of the second support 7. In that case, if the third joining member 11 extends to the outer opening 74b of the fifth surface 72 in the third opening 74, the portion 112 of the third joining member 11 located in the region R32 within the third opening 74 of the second support 7 functions as a core, thereby improving the bonding strength between the lens 5 and the second support 7, and suppressing axial misalignment of the lens 5 in a direction perpendicular to the Y direction. However, the third joining member 11 does not need to extend to the outer opening 74b of the third opening 74, as long as it is continuously located in at least a portion of the region R31a and at least a portion of the region R32.

[0090] The third joining member 11 does not need to be positioned in at least a portion of the region R31a between the second end face 53b of the lens 5 and the inner opening 74a of the third opening 74, and in at least a portion of the region R32 within the third opening 74 of the second support 7, as long as it is continuously positioned in that region. Even in this case, the bonding strength between the lens 5 and the second support 7 can be improved while suppressing axial misalignment of the lens 5 in a direction perpendicular to the Y direction. The portion 111b of the third joining member 11 does not need to be annular, and the shape of the portion 111b is not particularly limited. However, from the viewpoint of ensuring adhesive strength between the lens 5 and the second support 7, it is preferable that the portion 111b is annular.

[0091] Furthermore, the second joining member 9 does not need to be positioned in at least a portion of the region R23b on the second surface 62 of the first support 6, as long as it is continuously positioned in at least a portion of the region R21a between the first side surface 32a of the submount 3 and the inner opening 65a of the second opening 65, and in at least a portion of the region R22 within the second opening 65 of the first support 6. In that case, the second joining member 9 may or may not extend to the outer opening 65b of the second surface 62 in the second opening 65.

[0092] Furthermore, the second joining member 9 does not need to be positioned in at least a portion of the region R21a between the first side surface 32a of the submount 3 and the inner opening 65a of the second opening 65, and in at least a portion of the region R22 within the second opening 65 of the first support 6, as long as it is continuously positioned in that region.

[0093] Similarly, the fourth joining member 12 does not need to be located in at least a portion of the region R43b on the fifth surface 72 of the second support 7, as long as it is continuously positioned in at least a portion of the region R41a between the second side surface 32b of the submount 3 and the inner opening 75a of the fourth opening 75, and in at least a portion of the region R42 within the fourth opening 75 of the second support 7. In that case, the fourth joining member 12 may or may not extend to the outer opening 75b on the fifth surface 72 side of the fourth opening 75.

[0094] Furthermore, the fourth joining member 12 does not need to be positioned in at least a portion of the region R41a between the second side surface 32b of the submount 3 and the inner opening 75a of the fourth opening 75, and in at least a portion of the region R42 within the fourth opening 75 of the second support 7, as long as it is continuously positioned in at least a portion of the region R41b between the second side surface 32b of the submount 3 and the fourth surface 71 of the second support 7. In this case as well, the bonding strength between the submount 3 and the second support 7 can be improved. Note that the portion 121b of the fourth joining member 12 does not need to be annular, and the shape of the portion 121b is not particularly limited. However, from the viewpoint of ensuring the adhesive strength between the submount 3 and the second support 7, it is preferable that the portion 121b is annular.

[0095] Furthermore, the first support 6 may be attached to the submount 3 via another component, or it may be formed integrally with the submount 3. Similarly, the second support 7 may be attached to the submount 3 via another component, or it may be formed integrally with the submount 3. The semiconductor laser device 1 may also have a base separate from the submount 3. The base may also be composed of multiple components. Alternatively, the semiconductor laser device 1 may not have a submount 3, but instead have a heat sink as its base, with the first support 6 and the second support 7 attached to the heat sink. Also, the semiconductor laser device 1 may have the first support 6 but not the second support 7. Furthermore, the semiconductor laser element 4 may have a single light-emitting point 4a.

[0096] In the above-described embodiment, a single first opening 64 was formed in the first support 6, but multiple first openings 64 may be formed in the first support 6. Also, in the above-described embodiment, a single second opening 65 was formed in the first support 6, but multiple second openings 65 may be formed in the first support 6. Similarly, in the above-described embodiment, a single third opening 74 was formed in the second support 7, but multiple third openings 74 may be formed in the second support 7. Also, in the above-described embodiment, a single fourth opening 75 was formed in the second support 7, but multiple fourth openings 75 may be formed in the second support 7.

[0097] Furthermore, the shape of the first opening 64 as a through hole is not limited to a cylindrical shape with a center line parallel to the Y direction, but may be other shapes such as a prismatic shape. For example, the first opening 64 may be a tapered through hole in which the outer opening 64b is smaller than the inner opening 64a. In that case, the first joining member 8 can be more easily placed in the first opening 64. Also, the first opening 64 as a through hole may extend so that its center line is inclined with respect to the Y direction, or it may be bent inside the first support 6. The same applies to the second opening 65, the third opening 74, and the fourth opening 75, respectively.

[0098] Furthermore, from the viewpoint of ensuring the strength of the first support 6, it is preferable that the widths (maximum widths) of the inner opening 64a and outer opening 64b of the first opening 64 in the Z direction be 1 / 2 or less of the width of the first support 6 in the Z direction. Also, from the viewpoint of ensuring sufficient space for the first joining member 8 to flow in, it is preferable that the widths (maximum widths) of the inner opening 64a and outer opening 64b of the first opening 64 in the Z direction be 1 / 10 or more of the width of the first support 6 in the Z direction, and more preferably 1 / 5 or more of the width of the first support 6 in the Z direction. The same applies to the second opening 65, the third opening 74, and the fourth opening 75, respectively.

[0099] Furthermore, during the manufacturing of the semiconductor laser device 1, the first bonding member 8 may be moved to region R12 within the first opening 64 of the first support 6 by placing the first bonding member 8 in region R11 (regions R11a, R11b) between the first end face 53a of the lens 5 and the first surface 61 of the first support 6. In this case, the first bonding member 8 may be applied to the first end face 53a of the lens 5 or the first surface 61 of the first support 6, and the first bonding member 8 may be moved to region R12 within the first opening 64 by pressing the other against one of the first end face 53a and the first surface 61. Alternatively, during the manufacturing of the semiconductor laser device 1, the first bonding member 8 may be moved to region R11b between the first end face 53a of the lens 5 and the first surface 61 of the first support 6 by placing the first bonding member 8 in region R12 within the first opening 64 of the first support 6. In that case, with the first end face 53a of the lens 5 and the first surface 61 of the first support 6 in contact, the first joining member 8 may be moved to the region R11b between the first end face 53a and the first surface 61 by injecting the first joining member 8 into the region R12 within the first opening 64 from the outer opening 64b side (i.e., from the second surface 62 side). If there is a small gap between the first end face 53a and the first surface 61, the first joining member 8 can enter the region R11b between the first end face 53a and the first surface 61 by capillary action. However, the former manufacturing method is preferred from the viewpoint of making it easier for the first joining member 8 to be positioned in the region R11b.

[0100] Similarly, during the manufacturing of the semiconductor laser apparatus 1, the third bonding member 11 may be moved to region R32 within the third opening 74 of the second support 7 by positioning the third bonding member 11 in region R31 (regions R31a, R31b) between the second end face 53b of the lens 5 and the fourth surface 71 of the second support 7, or the third bonding member 11 may be moved to region R31b between the second end face 53b of the lens 5 and the fourth surface 71 of the second support 7 by positioning the third bonding member 11 in region R32 within the third opening 74 of the second support 7. However, the former manufacturing method is preferred from the viewpoint of making it easier to position the third bonding member 11 in region R31b.

[0101] Furthermore, during the manufacturing of the semiconductor laser device 1, the second bonding member 9 may be moved to region R22 within the second opening 65 of the first support 6 by placing the second bonding member 9 in region R21 (regions R21a, R21b) between the first side surface 32a of the submount 3 and the first surface 61 of the first support 6, or the second bonding member 9 may be moved to region R21b between the first side surface 32a of the submount 3 and the first surface 61 of the first support 6 by placing the second bonding member 9 in region R22 within the second opening 65 of the first support 6. However, the former manufacturing method is preferred from the viewpoint of making it easier to place the second bonding member 9 in region R21b.

[0102] Similarly, during the manufacturing of the semiconductor laser apparatus 1, the fourth bonding member 12 may be moved to region R42 within the fourth opening 75 of the second support 7 by positioning the fourth bonding member 12 in region R41 (regions R41a, R41b) between the second side surface 32b of the submount 3 and the fourth surface 71 of the second support 7, or the fourth bonding member 12 may be moved to region R41b between the second side surface 32b of the submount 3 and the fourth surface 71 of the second support 7 by positioning the fourth bonding member 12 in region R42 within the fourth opening 75 of the second support 7. However, the former manufacturing method is preferred from the viewpoint that the fourth bonding member 12 is easily positioned in region R41b.

[0103] Furthermore, at least a portion of the light-emitting surface 52 of the lens 5 may protrude to one side in the Z direction from the tip 6a of the first support 6 and the tip 7a of the second support 7 when viewed from the Y direction. That is, at least a portion of the light-emitting surface 52 of the lens 5 may be offset from the first support 6 and the second support 7 in a direction perpendicular to the Y direction (including the X and Z directions) when viewed from the Y direction. In this case, it is possible to prevent the first joining member 8 and the third joining member 11 from adhering to the light-emitting surface 52 of the lens 5.

[0104] Furthermore, at least a portion of the light incident surface 51 of the lens 5 may protrude to one side in the Z direction from the tip 6a of the first support 6 and the tip 7a of the second support 7 when viewed from the Y direction. In other words, at least a portion of the light incident surface 51 of the lens 5 may be offset in a direction perpendicular to the Y direction from the first support 6 and the second support 7 when viewed from the Y direction. In this case, it is possible to prevent the first joining member 8 and the third joining member 11 from adhering to the light incident surface 51 of the lens 5.

[0105] Furthermore, the light-emitting surface 52 of the lens 5 does not need to be offset perpendicular to the Y direction from the first support 6 and the second support 7 when viewed from the Y direction. In that case, the entire first end surface 53a of the lens 5 may overlap with the first surface 61 of the first support 6 when viewed from the Y direction. Also, the entire second end surface 53b of the lens 5 may overlap with the fourth surface 71 of the second support 7 when viewed from the Y direction. [Explanation of Symbols]

[0106] 1...Semiconductor laser device, 3...Submount (base), 32a...First side (side), 4...Semiconductor laser element, 4a...Emitting point, 5...Lens, 51...Light incident surface, 52...Light output surface, 53a...First end face, 53b...Second end face, 6...First support, 61...First surface, 61a,61b...Region, 62...Second surface, 63...Third surface, 63a,63b...Region, 64...First aperture, 64a...Inner aperture , 64b...Outer opening, 65...Second opening, 65a...Inner opening, 7...Second support body, 71...Fourth surface, 72...Fifth surface, 74...Third opening, 74a...Inner opening, 8...First joining member, 81,8 2, 83... portion, 9... second bonding member, 11... third bonding member, L... laser beam, R11a, R11b, R12, R13b, R21a, R21b, R22, R31a, R31b, R32... region.

Claims

1. Base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. A second support having a fourth surface located on the second end face side in the second direction, and a fifth surface located on the opposite side from the second end face in the second direction, and supporting the lens with respect to the base, The system further comprises a third joining member that joins the lens and the second support, The second support has a third opening that opens to the fourth surface and the fifth surface, At least a portion of the inner opening on the fourth surface side of the third opening overlaps with the second end face when viewed from the second direction. A semiconductor laser apparatus wherein the third joining member is continuously arranged in at least a portion of the region between the second end face and the inner opening of the third opening, and in at least a portion of the region within the third opening.

2. The semiconductor laser apparatus according to claim 1, wherein the first joining member is continuously arranged in at least a portion of the region between the first end face and the first surface, at least a portion of the region between the first end face and the inner opening of the first opening, and at least a portion of the region within the first opening.

3. The semiconductor laser apparatus according to claim 1, wherein the first opening is a through hole opening in the first surface and the second surface.

4. The semiconductor laser apparatus according to claim 1, wherein the first opening is a notch that opens to the first surface and the second surface and also opens to a third surface connecting the first surface and the second surface.

5. The semiconductor laser apparatus according to claim 4, wherein the notch is open in a region of the third surface that, when viewed from the second direction, is located on the opposite side of the semiconductor laser element in the first direction.

6. The semiconductor laser apparatus according to claim 4, wherein the notch is open in a region of the third surface that is located on one side in the third direction when viewed from the second direction.

7. The semiconductor laser apparatus according to claim 1, wherein the first joining member extends to the outer opening on the second surface side of the first opening.

8. The semiconductor laser apparatus according to claim 1, wherein the first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, at least a portion of the region within the first opening, and at least a portion of the region on the second surface.

9. The semiconductor laser apparatus according to claim 8, wherein in the first joining member, the portion disposed in at least part of the region between the first end face and the inner opening of the first opening is thinner than the portion disposed in at least part of the region on the second surface.

10. The semiconductor laser apparatus according to claim 1, wherein the entire inner opening of the first opening overlaps with the first end face when viewed from the second direction.

11. The semiconductor laser apparatus according to claim 1, wherein the first support is light-transmitting.

12. The semiconductor laser apparatus according to claim 1, wherein the thickness of the first support in the second direction is 2 mm or less.

13. The semiconductor laser apparatus according to claim 1, wherein at least a portion of the light-emitting surface is offset from the first support when viewed from the second direction.

14. The semiconductor laser apparatus according to claim 1, wherein the width of the inner opening of the first opening in the first direction is greater than or equal to the width of the inner opening of the first opening in the third direction.

15. The system further comprises a second joining member that joins the base and the first support, which is formed separately from the base. The first support has a second opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the second opening overlaps with the side surface of the base when viewed from the second direction. The semiconductor laser apparatus according to claim 1, wherein the second joining member is continuously arranged in at least a portion of the region between the side surface and the inner opening of the second opening, and in at least a portion of the region within the second opening.

16. The semiconductor laser apparatus according to claim 15, wherein the second joining member is continuously arranged in at least a portion of the region between the side surface and the first surface, at least a portion of the region between the side surface and the inner opening of the second opening, and at least a portion of the region within the second opening.

17. On the first surface, the area of ​​the region that overlaps with the side surface when viewed from the second direction is greater than the area of ​​the region that overlaps with the first end surface when viewed from the second direction. The semiconductor laser apparatus according to claim 15, wherein the area of ​​the inner opening of the second opening is larger than the area of ​​the inner opening of the first opening.

18. The semiconductor laser apparatus according to claim 1, wherein the third joining member is continuously arranged in at least a portion of the region between the second end face and the fourth surface, at least a portion of the region between the second end face and the inner opening of the third opening, and at least a portion of the region within the third opening.

19. The semiconductor laser element has a plurality of light-emitting points aligned in the second direction, The lens extends in the second direction, The semiconductor laser apparatus according to claim 1, wherein the light incident surface faces the plurality of light-emitting points in the first direction.

20. A base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. The first opening is a notch that opens to the first surface and the second surface, and also opens to a third surface connecting the first surface and the second surface. The semiconductor laser device wherein the notch is an opening in a region of the third surface that is located on one side in the third direction when viewed from the second direction.

21. A base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. A semiconductor laser device in which the first joining member extends to the outer opening on the second surface side of the first opening.

22. A base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. A semiconductor laser apparatus wherein the first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, at least a portion of the region within the first opening, and at least a portion of the region on the second surface.

23. A base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. A semiconductor laser device wherein at least a portion of the light-emitting surface is offset from the first support when viewed from the second direction.

24. A base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. A semiconductor laser apparatus in which the width of the inner opening of the first opening in the first direction is greater than or equal to the width of the inner opening of the first opening in the third direction.

25. A base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. The system further comprises a second joining member that joins the base and the first support, which is formed separately from the base. The first support has a second opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the second opening overlaps with the side surface of the base when viewed from the second direction. A semiconductor laser apparatus wherein the second joining member is continuously arranged in at least a portion of the region between the side surface and the inner opening of the second opening, and in at least a portion of the region within the second opening.

26. A base and, A semiconductor laser element, which is placed on the base and has at least one light-emitting point that emits laser light, A lens having a light incident surface facing at least one light-emitting point in a first direction, a light emission surface located on the opposite side of the light incident surface in the first direction, a first end face located on one side in a second direction perpendicular to the first direction, and a second end face located on the other side in the second direction, which adjusts the divergence angle of the laser beam in a third direction perpendicular to both the first and second directions, A first support having a first surface located on the side of the first end face in the second direction, and a second surface located on the opposite side from the first end face in the second direction, and supporting the lens with respect to the base, The lens and the first support are joined together by a first joining member, The first support has a first opening that opens to the first surface and the second surface, At least a portion of the inner opening on the first surface side of the first opening overlaps with the first end face when viewed from the second direction. The first joining member is continuously arranged in at least a portion of the region between the first end face and the inner opening of the first opening, and in at least a portion of the region within the first opening. The semiconductor laser element has a plurality of light-emitting points aligned in the second direction, The lens extends in the second direction, A semiconductor laser device in which the light incident surface faces the plurality of light-emitting points in the first direction.

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