Substrate processing equipment

Abstract

To provide a substrate processing device that can reduce consumption of a process liquid.SOLUTION: A substrate processing device 100 processes a substrate W. The substrate processing device 100 includes a substrate holding part 7, a process liquid discharge part 6, a contact member holding part 4, a contact member moving part 5, and a pressure relieving mechanism AK. The substrate holding part 7 holds the substrate W. The process liquid discharge part 6 discharges a process liquid to an upper surface of the substrate W held by the substrate holding part 7 and supplies the process liquid to the substrate W. The contact member holding part 4 holds a contact member 3 that covers the process liquid in contact with the process liquid on the substrate W. The contact member moving part 5 moves the contact member holding part 4 to bring the contact member 3 in contact with the process liquid on the substrate W. The pressure relieving mechanism AK relieves the pressure to be applied on the process liquid when the contact member 3 is brought into contact with the process liquid.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background Art]

[0002] A single-wafer type substrate processing apparatus that processes substrates one by one is known. This type of substrate processing apparatus includes, for example, a substrate processing apparatus that etches substrates (see, for example, Patent Document 1). In the substrate processing apparatus of Patent Document 1, during an etching process, an etching solution is continuously discharged from a nozzle toward the substrate to be processed. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Unexamined Patent Application Publication No. 2019-54104 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] However, in a configuration in which a substrate is processed by continuously discharging a processing liquid toward the substrate to be processed, the consumption amount of the processing liquid increases. There is room for further improvement when considering the consumption amount of the processing liquid.

[0005] The present invention has been made in view of the above problem, and an object of the present invention is to provide a substrate processing apparatus capable of reducing consumption of a processing liquid. [Means for Solving the Problem]

[0006] According to one aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus comprises a substrate holding unit, a processing liquid discharge unit, a contact member holding unit, a contact member moving unit, and a pressure relief mechanism. The substrate holding unit holds the substrate. The processing liquid discharge unit discharges the processing liquid onto the upper surface of the substrate held by the substrate holding unit, thereby supplying the processing liquid to the substrate. The contact member holding unit holds a contact member that contacts and covers the processing liquid on the substrate. The contact member moving unit moves the contact member holding unit to bring the contact member into contact with the processing liquid on the substrate. The pressure relief mechanism relieves the pressure applied to the processing liquid when the contact member comes into contact with the processing liquid.

[0007] In one embodiment, the substrate processing apparatus further comprises a control unit that controls the processing liquid discharge unit and the contact member movement unit. The control unit discharges the processing liquid from the processing liquid discharge unit and then brings the contact member into contact with the processing liquid.

[0008] In one embodiment, the processing liquid discharge unit discharges a fixed amount of the processing liquid.

[0009] In one embodiment, the substrate processing apparatus further comprises the contact member.

[0010] In one embodiment, the pressure relief mechanism is provided in the contact member holding portion. The pressure relief mechanism supports the contact member so that it can move up and down.

[0011] In one embodiment, the contact member includes a supported portion supported by the contact member holding portion. The contact member holding portion includes a support portion that supports the supported portion. The pressure relief mechanism supplies gas between the supported portion and the support portion.

[0012] In one embodiment, the substrate processing apparatus further includes a regulating member that restricts the lower limit position of the contact member.

[0013] In one embodiment, the pressure relief mechanism includes an elastic member.

[0014] In one embodiment, the pressure relief mechanism includes a lifting support member, a lifting unit, and a control unit. The lifting support member supports the contact member from below. The lifting unit raises and lowers the lifting support member. The control unit controls the contact member moving unit and the lifting unit. While maintaining the state in which the lifting support member is in contact with the contact member from below, the control unit moves the contact member toward the processing liquid on the substrate to bring it into contact with the processing liquid.

[0015] In one embodiment, the pressure relief mechanism includes a contact member moving unit and a control unit that controls the contact member moving unit. The control unit moves the contact member such that the pressure applied to the processing liquid is relieved when the contact member comes into contact with the processing liquid.

[0016] In one embodiment, the contact member holding portion enters a non-holding state after the contact member has come into contact with the processing liquid, and does not hold the contact member.

[0017] In one embodiment, the contact member holding portion holds the contact member even after the contact member has come into contact with the processing liquid.

[0018] In one embodiment, the substrate processing apparatus further comprises a substrate rotating unit and a control unit. The substrate rotating unit rotates the substrate holding unit to rotate the substrate held by the substrate holding unit. The control unit controls the substrate rotating unit. The control unit rotates the substrate while the contact member is in contact with the processing liquid.

[0019] In one embodiment, the substrate processing apparatus further comprises a substrate rotating unit and a control unit. The substrate rotating unit rotates the substrate holding unit to rotate the substrate held by the substrate holding unit. The control unit controls the substrate rotating unit. The control unit stops the rotation of the substrate while the contact member is in contact with the processing liquid.

[0020] In one embodiment, the contact member includes a hydrophobic material or a superhydrophobic material.

[0021] In one embodiment, the substrate holding portion includes an engaging portion that engages with the contact member.

Effects of the Invention

[0022] According to the substrate processing apparatus of the present invention, the consumption of processing liquid can be reduced.

Brief Description of the Drawings

[0023] [Figure 1] FIG. 1 is a schematic plan view of a substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 2] FIG. 2 is a cross-sectional view schematically showing the configuration of a substrate processing section included in the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 3] (a) is a flowchart showing the operation of the substrate processing apparatus according to Embodiment 1 of the present invention. (b) is a flowchart showing the processing flow during substrate processing. [Figure 4] FIG. 3 is a diagram schematically showing the substrate processing section during chemical liquid discharge. [Figure 5] FIG. 4 is a diagram schematically showing the substrate processing section when bringing the contact member into contact with the liquid surface. [Figure 6] FIG. 5 is a diagram schematically showing the substrate processing section during rinsing processing. [Figure 7] (a) is a diagram schematically showing Modified Example 1 of the substrate processing apparatus according to Embodiment 1 of the present invention. (b) is a diagram schematically showing Modified Example 2 of the substrate processing apparatus according to Embodiment 1 of the present invention. [Figure 8] FIG. 6 is a flowchart showing another example of the processing flow during substrate processing. [Figure 9] (a) is a diagram schematically showing a part of the substrate processing section included in the substrate processing apparatus according to Embodiment 2 of the present invention. (b) is a diagram showing another example of the engaging pin. [Figure 10] FIG. 7 is a diagram schematically showing a part of the substrate processing section included in the substrate processing apparatus according to Embodiment 3 of the present invention. [Figure 11] This is a schematic cross-sectional view showing the configuration of a substrate processing unit included in a substrate processing apparatus according to Embodiment 4 of the present invention. [Figure 12] (a) is a diagram showing a third nozzle, a rinse liquid supply unit, and a third gas supply unit included in a substrate processing apparatus according to Embodiment 4 of the present invention. (b) is a side view of the third nozzle. (c) is a bottom view of the third nozzle. [Figure 13] (a) is a schematic diagram showing the substrate processing area when the contact member is brought into contact with the liquid surface. (b) is a schematic diagram showing the substrate processing area during the rinsing process. [Figure 14] This figure schematically shows a part of the substrate processing unit included in the substrate processing apparatus according to Embodiment 5 of the present invention. [Figure 15] (a) is a schematic diagram showing a part of the substrate processing unit included in the substrate processing apparatus according to Embodiment 6 of the present invention. (b) is a schematic cross-sectional view showing an enlarged view of a part of the contact member and the contact member holding part. [Figure 16] Figures (a) to (c) schematically show the operation of the substrate processing unit after the chemical solution is discharged from the first nozzle onto the upper surface of the substrate. [Figure 17] (a) and (b) are schematic diagrams showing the operation of the substrate processing unit after the chemical solution is discharged from the first nozzle onto the upper surface of the substrate. [Figure 18] This figure schematically shows a part of the substrate processing unit included in the substrate processing apparatus according to Embodiment 7 of the present invention. [Figure 19] Figures (a) to (c) schematically show the operation of the substrate processing unit after the chemical solution is discharged from the first nozzle onto the upper surface of the substrate. [Figure 20] Figures (a) to (c) schematically show the operation of the substrate processing unit after the chemical solution is discharged from the first nozzle onto the upper surface of the substrate. [Figure 21] (a) is a schematic diagram showing a part of the substrate processing unit included in the substrate processing apparatus according to Embodiment 8 of the present invention. (b) is a bottom view of the contact member. [Figure 22] This figure schematically shows a part of the substrate processing unit included in the substrate processing apparatus according to Embodiment 9 of the present invention. [Figure 23] Figures (a) to (c) schematically show the operation of the substrate processing unit after the chemical solution is discharged from the first nozzle onto the upper surface of the substrate. [Figure 24] Figures (a) to (c) schematically show the operation of the substrate processing unit after the chemical solution is discharged from the first nozzle onto the upper surface of the substrate. [Figure 25] This is a schematic cross-sectional view showing the configuration of a substrate processing unit included in a substrate processing apparatus according to Embodiment 10 of the present invention. [Figure 26] This is a cross-sectional view showing the configuration of the contact member holding portion. [Figure 27] (a) is a schematic diagram showing the substrate processing stage after the contact member has come into contact with the chemical solution discharged onto the upper surface of the substrate. (b) is a schematic diagram showing the substrate processing stage during the rinsing process. (c) is a schematic diagram showing the substrate processing stage during the drying process. [Modes for carrying out the invention]

[0024] Embodiments of the substrate processing apparatus of the present invention will be described below with reference to the drawings (Figures 1 to 27). However, the present invention is not limited to the following embodiments and can be implemented in various forms without departing from its essence. In addition, explanations may be omitted where necessary to avoid repetition. Furthermore, in the figures, the same or corresponding parts are denoted by the same reference numerals and their descriptions are not repeated.

[0025] In the substrate processing apparatus according to the present invention, the "substrate" to be processed can be various types of substrates, including semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. The embodiments of the present invention will be described below primarily using a disc-shaped semiconductor wafer as an example, but the substrate processing apparatus according to the present invention is similarly applicable to various types of substrates other than the semiconductor wafers described above. Furthermore, the substrate shape is not limited to a disc shape; the substrate processing apparatus according to the present invention is applicable to substrates of various shapes.

[0026] [Embodiment 1] Embodiment 1 of the present invention will be described with reference to Figures 1 to 8. First, the substrate processing apparatus 100 of this embodiment will be described with reference to Figure 1. Figure 1 is a schematic plan view of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 processes substrates W. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus that processes substrates W one by one with a processing solution.

[0027] In this embodiment, the substrate processing apparatus 100 is a cleaning apparatus. However, the substrate processing apparatus 100 is not particularly limited as long as it is an apparatus that processes substrates W one by one with a processing solution. For example, the substrate processing apparatus 100 may be an etching apparatus.

[0028] As shown in Figure 1, the substrate processing apparatus 100 comprises a plurality of substrate processing units 2, a fluid cabinet 10A, a plurality of fluid boxes 10B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

[0029] Each load port LP accommodates multiple substrates W stacked on top of each other. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing unit 2. Alternatively, a temporary placement platform (path) for the substrates W may be provided between the indexer robot IR and the center robot CR, allowing for indirect transfer of the substrates W between the indexer robot IR and the center robot CR via the placement platform.

[0030] Multiple substrate processing units 2 form multiple towers TW (four towers TW in Figure 1). The multiple towers TW are arranged to surround the central robot CR in a plan view. Each tower TW contains multiple substrate processing units 2 (three substrate processing units 2 in Figure 1) stacked vertically.

[0031] The fluid cabinet 10A contains the processing fluid. Each fluid box 10B corresponds to one of the towers TW. The processing fluid in the fluid cabinet 10A is supplied to all the board processing units 2 included in the tower TW corresponding to one of the fluid boxes 10B via one of the fluid boxes 10B.

[0032] The treatment solution includes a chemical solution and a rinsing solution. The chemical solution is, for example, dilute hydrofluoric acid (DHF). However, the chemical solution is not limited to dilute hydrofluoric acid. The chemical solution may be, for example, hydrofluoric acid (HF), hydrofluoric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide water, organic acids (e.g., citric acid, oxalic acid), organic alkalis (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid-hydrogen peroxide mixture (SPM), ammonia-hydrogen peroxide mixture (SC1), hydrochloric acid-hydrogen peroxide mixture (SC2), isopropyl alcohol (IPA), surfactants, or corrosion inhibitors. The rinsing solution is, for example, pure water (e.g., deionized water). However, the rinsing solution is not limited to pure water. The rinsing solution may be, for example, carbonated water, electrolyzed ionized water, hydrogen water, ozonated water, or hydrochloric acid water at a diluted concentration (for example, about 10 ppm to 100 ppm).

[0033] The fluid cabinet 10A may contain additional gas. The gas in the fluid cabinet 10A is supplied to all the substrate processing units 2 included in the tower TW corresponding to one of the fluid boxes 10B via one of the fluid boxes 10B. The gas may be an inert gas such as nitrogen gas.

[0034] Each of the substrate processing units 2 supplies a processing solution to the upper surface of the substrate W. As a result, the substrate W is processed. For example, the substrate processing unit 2 supplies dilute hydrofluoric acid to the upper surface of the substrate W to remove the native oxide film formed on the substrate W. In other words, the substrate processing unit 2 etches the native oxide film.

[0035] The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the indexer robot IR, the center robot CR, and the substrate processing unit 2. The control device 101 includes a control unit 102 and a storage unit 103.

[0036] The control unit 102 controls the operation of each part of the substrate processing apparatus 100 based on various information stored in the memory unit 103. The control unit 102 has, for example, a processor. The control unit 102 may have a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as its processor. Alternatively, the control unit 102 may have a general-purpose arithmetic unit or a dedicated arithmetic unit.

[0037] The storage unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. The data includes various recipe data. The recipe data includes, for example, process recipes. Process recipes are data that defines the procedure for substrate processing. Specifically, process recipes are included in substrate processing. re This defines the execution order of a series of processes, the content of each process, and the conditions (parameter settings) for each process.

[0038] The storage unit 103 has a main memory. The main memory is, for example, a semiconductor memory. The storage unit 103 may further have an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may also include removable media.

[0039] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 and 2. Figure 2 is a schematic cross-sectional view showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment.

[0040] As shown in Figure 2, the substrate processing unit 2 includes a processing chamber 2a, a contact member 3, a contact member holding unit 4, a contact member moving unit 5, a first nozzle 6, a chemical nozzle moving unit 62, a substrate holding unit 7, a substrate rotating unit 8, a second nozzle 9, a cup unit 11, and a cup lifting unit 111. The substrate processing device 100 further includes a chemical supply unit 61 and a rinse liquid supply unit 91.

[0041] The substrate W is brought into the processing chamber 2a and processed within the processing chamber 2a. The processing chamber 2a has a roughly box shape. The processing chamber 2a houses a contact member 3, a contact member holding part 4, a contact member moving part 5, a first nozzle 6, a chemical nozzle moving part 62, a substrate holding part 7, a substrate rotating part 8, a second nozzle 9, a cup part 11, a cup lifting part 111, a part of the chemical supply part 61, and a part of the rinse liquid supply part 91. The processing chamber 2a is, for example, a chamber.

[0042] The substrate holder 7 holds the substrate W. The operation of the substrate holder 7 is controlled by the control device 101 (control unit 102). More specifically, the substrate holder 7 holds the substrate W in a horizontal position. The substrate holder 7 is, for example, a spin chuck. In this embodiment, the substrate holder 7 has a plurality of chuck members 71, a spin base 72, and a plurality of engagement pins 73.

[0043] The spin base 72 is substantially disc-shaped and supports multiple chuck members 71 in a horizontal position. In this embodiment, the spin base 72 further supports multiple engagement pins 73.

[0044] Multiple chuck members 71 are positioned on the periphery of the spin base 72. The multiple chuck members 71 grip the periphery of the substrate W. The multiple chuck members 71 hold the substrate W in a horizontal position. The operation of the multiple chuck members 71 is controlled by the control device 101 (control unit 102). The multiple chuck members 71 are positioned so that the center of the substrate W coincides with the center of the spin base 72.

[0045] Multiple engagement pins 73 are arranged on the periphery of the spin base 72. For example, multiple engagement pins 73 are arranged on the outside of multiple chuck members 71. Alternatively, multiple engagement pins 73 may be arranged between multiple chuck members 71. The engagement pins 73 are rod-shaped members. In this embodiment, the engagement pins 73 are cylindrical. Multiple engagement pins 73 protrude upward from the spin base 72. Multiple engagement pins 73 engage with the contact member 3 when the contact member 3 comes into contact with the chemical solution on the substrate W. The engagement pins 73 are an example of an "engagement portion".

[0046] The substrate rotating unit 8 rotates the substrate holding unit 7, thereby rotating the substrate W held by the substrate holding unit 7. Specifically, the substrate rotating unit 8 rotates the substrate W and the substrate holding unit 7 together around a first rotation axis AX1 that extends in the vertical direction. The operation of the substrate rotating unit 8 is controlled by the control device 101 (control unit 102).

[0047] More specifically, the first rotation axis AX1 passes through the center of the spin base 72. Therefore, the spin base 72 rotates with its own center as the center of rotation. Also, as already explained, the substrate holder 7 holds the substrate W such that its center coincides with the center of the spin base 72. Therefore, the substrate W rotates with its own center as the center of rotation.

[0048] The substrate rotating section 8 includes, for example, a motor body 82 and a shaft 81. The shaft 81 is coupled to the spin base 72. The motor body 82 rotates the shaft 81. As a result, the spin base 72 rotates. The operation of the motor body 82 is controlled by a control device 101 (control unit 102). The motor body 82 is, for example, an electric motor.

[0049] The first nozzle 6 supplies the chemical solution to the substrate W by discharging it toward the upper surface of the substrate W held by the substrate holding section 7. The first nozzle 6 discharges, for example, dilute hydrofluoric acid. The first nozzle 6 is an example of a "processing liquid discharge section". In this embodiment, the first nozzle 6 discharges a fixed amount of the chemical solution. Here, the fixed amount is the amount of chemical solution supplied from the first nozzle 6 to the substrate W that does not spill off the substrate W. In other words, the fixed amount is the amount of chemical solution that is held on the upper surface of the substrate W by surface tension. Alternatively, the fixed amount may be the amount of chemical solution that does not spill off the rotating substrate W. In other words, the fixed amount may be the amount of chemical solution that is held on the upper surface of the rotating substrate W by surface tension. The rotation speed of the substrate W when a fixed amount of chemical solution is discharged from the first nozzle 6 is, for example, 5 rpm or more and 10 rpm or less.

[0050] The chemical supply unit 61 supplies a chemical solution to the first nozzle 6. For example, the chemical supply unit 61 supplies dilute hydrofluoric acid to the first nozzle 6. In this embodiment, the chemical supply unit 61 includes a chemical piping 611 and a first on-off valve 612. The processing chamber 2a houses a portion of the chemical piping 611. The first on-off valve 612 may be housed in the fluid box 10B described with reference to Figure 1.

[0051] The chemical solution piping 611 is a tubular component that allows the chemical solution to flow to the first nozzle 6. The first on-off valve 612 is interposed in the chemical solution piping 611. The first on-off valve 612 controls the supply of the chemical solution to the first nozzle 6 via the chemical solution piping 611, and the stopping of the supply of the chemical solution to the first nozzle 6. Specifically, the state of the first on-off valve 612 can be switched between an open state and a closed state. When the first on-off valve 612 is open, the chemical solution flows to the first nozzle 6 via the chemical solution piping 611. When the first on-off valve 612 is closed, the flow of the chemical solution via the chemical solution piping 611 stops. The first on-off valve 612 is controlled by the control device 101 (control unit 102). The actuator of the first on-off valve 612 is ,example For example, pneumatic actuators or electric actuators.

[0052] The chemical nozzle moving unit 62 moves the first nozzle 6 between a first retracted position and a processing position. The chemical nozzle moving unit 62 is controlled by a control device 101 (control unit 102). The first retracted position is a position outside the substrate holding unit 7 in a plan view. In this embodiment, the first retracted position is a position outside the cup portion 11 in a plan view. The processing position is a position opposite the center of the substrate W held by the substrate holding unit 7.

[0053] More specifically, the chemical nozzle moving unit 62 moves the first nozzle 6 in the vertical and horizontal directions. Specifically, the chemical nozzle moving unit 62 includes a chemical arm 621, a first base 622, and a chemical nozzle moving mechanism 623.

[0054] The chemical arm 621 extends horizontally. The first nozzle 6 is positioned at the tip of the chemical arm 621. The chemical arm 621 is connected to the first base 622. The first base 622 extends vertically.

[0055] The chemical nozzle moving mechanism 623 moves the chemical arm 621 in the vertical and horizontal directions. As a result, the first nozzle 6 moves in the vertical and horizontal directions. The chemical nozzle moving mechanism 623 is controlled by the control device 101 (control unit 102).

[0056] Specifically, the chemical nozzle moving mechanism 623 swings the first base 622 about a second rotation axis AX2 extending vertically, causing the chemical arm 621 to swing along a horizontal plane. As a result, the first nozzle 6 moves along the horizontal plane. The chemical nozzle moving mechanism 623 also raises and lowers the first base 622 vertically, causing the chemical arm 621 to raise and lower. As a result, the first nozzle 6 moves along a vertical plane. The chemical nozzle moving mechanism 623 includes, for example, a ball screw mechanism and a reversible electric motor. The electric motor drives the ball screw mechanism.

[0057] The contact member 3 comes into contact with the chemical solution on the substrate W and covers the chemical solution on the substrate W. In this embodiment, the contact member 3 includes a contact portion 31, a cylindrical portion 32, and a supported portion 33.

[0058] The contact portion 31 is disc-shaped, and its diameter is larger than the diameter of the substrate W. The lower surface of the contact portion 31 is the liquid contact surface 31a, and the liquid contact surface 31a is in contact with the chemical solution on the substrate W.

[0059] The contact member 3 may contain a hydrophobic material or a superhydrophobic material. In this case, at least the liquid contact surface 31a is made of a hydrophobic material or a superhydrophobic material. The entire contact member 3 may be made of a hydrophobic material or a superhydrophobic material, or only the contact portion 31 may be made of a hydrophobic material or a superhydrophobic material. The liquid contact surface 31a is made of a hydrophobic material. ru This makes it difficult for the chemical solution to adhere to the liquid contact surface 31a, and facilitates rinsing and drying of the liquid contact surface 31a. If the liquid contact surface 31a is made of a superhydrophobic material, rinsing and drying of the liquid contact surface 31a may be omitted.

[0060] In this embodiment, the contact portion 31 includes a plurality of engagement holes 31b. Each engagement hole 31b extends vertically and penetrates the contact portion 31. The plurality of engagement holes 31b are positioned opposite to the plurality of engagement pins 73. When the contact member 3 comes into contact with the chemical solution on the substrate W, the plurality of engagement pins 73 engage with their respective engagement holes 31b. Specifically, the engagement pins 73 are inserted through their corresponding engagement holes 31b.

[0061] The cylindrical portion 32 is cylindrical and protrudes upward from the contact portion 31. Specifically, the cylindrical portion 32 extends in the circumferential direction centered on the first rotation axis AX1. The supported portion 33 is flange-shaped or annular and protrudes outward from the cylindrical portion 32. Specifically, the supported portion 33 protrudes in the radial direction centered on the first rotation axis AX1.

[0062] The contact member holding portion 4 holds the contact member 3. In this embodiment, the contact member holding portion 4 supports the supported portion 33 of the contact member 3. Specifically, the contact member holding portion 4 includes a support portion 41. The support portion 41 is annular and extends in the circumferential direction centered on the first rotation axis AX1. The support portion 41 is located below the supported portion 33 and faces the supported portion 33. The contact member 3 is supported by the contact member holding portion 4 when the supported portion 33 engages with the support portion 41.

[0063] More specifically, the contact member holding portion 4 includes a cylindrical portion. The cylindrical portion extends in the circumferential direction centered on the first rotation axis AX1. The support portion 41 is provided at the lower part of the cylindrical portion and protrudes inward from the cylindrical portion. The center of the lower surface of the contact member holding portion 4 is open, and a part of the cylindrical portion 32 of the contact member 3 is housed in the internal space of the contact member holding portion 4 from the lower surface of the contact member holding portion 4. The supported portion 33 of the contact member 3 is positioned in the internal space of the contact member holding portion 4 and faces the support portion 41 of the contact member holding portion 4.

[0064] The contact member holding portion 4 constitutes the pressure relief mechanism AK. In other words, the pressure relief mechanism AK is provided in the contact member holding portion 4. The pressure relief mechanism AK relieves the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W. As a result, the chemical solution is less likely to spill off the substrate W due to the impact of the contact member 3 coming into contact with the chemical solution on the substrate W. In other words, even when the contact member 3 comes into contact with the chemical solution on the substrate W, the chemical solution is retained on the substrate W.

[0065] Specifically, the contact member holding portion 4 enters a non-holding state after the contact member 3 has come into contact with the chemical solution, and does not hold the contact member 3. As a result, the load acting on the chemical solution is reduced to only the weight of the contact member 3, thus mitigating the pressure applied to the chemical solution.

[0066] More specifically, the contact member holding part 4 holds the contact member 3 so that it can move up and down freely. More precisely, the contact member holding part 4 holds the contact member 3 so that it can move up and down freely. As a result, when the contact member 3 comes into contact with the chemical solution on the substrate W, the load acting on the chemical solution is only the weight of the contact member 3, so the pressure applied to the chemical solution can be reduced.

[0067] The contact member moving unit 5 moves the contact member holding unit 4 to bring the contact member 3 into contact with the chemical solution on the substrate W. More specifically, the contact member moving unit 5 moves the contact member 3 between a second retracted position and a contact position. Here, the contact position is the position where the liquid contact surface 31a of the contact member 3 contacts the chemical solution on the substrate W. In this embodiment, the second retracted position is a position above the contact position. In other words, the contact member moving unit 5 raises and lowers the contact member 3 and the contact member holding unit 4. The operation of the contact member moving unit 5 is controlled by the control device 101 (control unit 102).

[0068] In this embodiment, the pressure relief mechanism AK further includes a contact member moving unit 5 and a control device 101. Specifically, the control device 101 (control unit 102) moves the contact member 3 so that the pressure applied to the chemical solution on the substrate W is relieved when the contact member 3 comes into contact with the chemical solution. For example, the control device 101 (control unit 102) moves the contact member 3 to the contact position at a low speed. The moving speed of the contact member 3 is set so that even when the contact member 3 comes into contact with the chemical solution on the substrate W, the impact of the contact does not cause the chemical solution to spill off the substrate W. As a result, even when the contact member 3 comes into contact with the chemical solution on the substrate W, the chemical solution is less likely to spill off the substrate W.

[0069] Specifically, the contact member moving section 5 includes a support arm 51, a second base 52, and a contact member moving mechanism 53. The support arm 51 extends horizontally. The support arm 51 supports the contact member holding section 4. The support arm 51 is coupled to the second base 52. The second base 52 extends vertically. The contact member moving mechanism 53 moves the support arm 51 vertically. As a result, the contact member 3 moves vertically. The contact member moving mechanism 53 is controlled by a control device 101 (control unit 102).

[0070] In detail, the contact member moving mechanism 53 raises and lowers the second base 52 along the vertical direction, thereby raising and lowering the support arm 51. As a result, the contact member 3 moves along the vertical direction. The contact member moving mechanism 53 includes an actuator such as an air cylinder.

[0071] In this embodiment, the contact member moving unit 5 moves the contact member 3 in the vertical direction, but the contact member moving unit 5 may also move the contact member 3 in both the vertical and horizontal directions, similar to the chemical nozzle moving unit 62.

[0072] The second nozzle 9 supplies rinsing liquid to the substrate W. More specifically, the second nozzle 9 discharges rinsing liquid toward the rotating substrate W. The second nozzle 9 is a fixed nozzle. In this embodiment, the second nozzle 9 is a fixed nozzle, but the second nozzle 9 may be a scanning nozzle.

[0073] The rinse fluid supply unit 91 supplies rinse fluid to the second nozzle 9. Specifically, the rinse fluid supply unit 91 includes rinse fluid piping 911 and a second on-off valve 912. The processing chamber 2a houses a portion of the rinse fluid piping 911. The second on-off valve 912 may be housed in the fluid box 10B described with reference to Figure 1.

[0074] The rinse liquid piping 911 circulates the rinse liquid to the second nozzle 9. The configuration of the rinse liquid piping 911 and the second on-off valve 912 is substantially the same as that of the chemical piping 611 and the first on-off valve 612, so a detailed explanation is omitted.

[0075] The cup portion 11 is positioned outside the substrate holding portion 7 and the substrate rotating portion 8. The cup portion 11 has a roughly cylindrical shape. In other words, the cup portion 11 surrounds the substrate holding portion 7 and the substrate rotating portion 8. The cup portion 11 receives the processing liquid splashed from the rotating substrate W.

[0076] The cup lifting unit 111 raises and lowers the cup portion 11. The cup lifting unit 111 is controlled by a control device 101 (control unit 102). The cup lifting unit 111 includes, for example, a ball screw mechanism and a forward and reverse rotatable electric motor. The electric motor drives the ball screw mechanism.

[0077] Specifically, the cup lifting unit 111 raises and lowers the cup portion 11 between the liquid receiving position and the third retracted position. The liquid receiving position is above the third retracted position. More specifically, when the substrate W is brought into the processing chamber 2a by the center robot CR (Figure 1), or when the substrate W is removed from the processing chamber 2a by the center robot CR (Figure 1), the cup portion 11 is retracted to the third retracted position. The cup portion 11 is positioned at the liquid receiving position when receiving the processing liquid.

[0078] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1, 2, and 3(a). Figure 3(a) is a flowchart showing the operation of the substrate processing apparatus 100 of this embodiment. More specifically, Figure 3(a) shows the flow of processing performed by the control device 101 (control unit 102).

[0079] The process shown in Figure 3(a) begins after the center robot CR receives the substrate W from the indexer robot IR. As shown in Figure 3(a), once the center robot CR receives the substrate W from the indexer robot IR, the control device 101 (control unit 102) controls the center robot CR to move the substrate W into the processing chamber 2a (step S1). The control device 101 (control unit 102) then controls the substrate holding unit 7 to hold the substrate W moved in by the center robot CR. As a result, the substrate W is held in the processing chamber 2a by the substrate holding unit 7. Once the substrate W is held, the control device 101 (control unit 102) causes the substrate processing unit 2 to perform substrate processing (step S2).

[0080] Once the substrate processing is complete, the control device 101 (control unit 102) instructs the substrate processing unit 2 to perform a drying process (step S3). The drying process is a process to dry the substrate W after the substrate processing. Specifically, the control device 101 (control unit 102) controls the substrate rotation unit 8 to rotate the substrate W at high speed. For example, the rotation speed of the substrate W during the drying process is 1500 rpm. By rotating the substrate W at high speed, the processing liquid adhering to the substrate W is shaken off, and the substrate W is dried.

[0081] The control device 101 (control unit 102) controls the substrate rotation unit 8 to stop the rotation of the substrate W after a predetermined time has elapsed since the high-speed rotation of the substrate W began. Once the rotation of the substrate W has stopped, the control device 101 (control unit 102) controls the substrate holding unit 7 to release the substrate W from its grip. Once the substrate W is released from the substrate holding unit 7, the control device 101 (control unit 102) controls the center robot CR to remove the substrate W from the processing chamber 2a (step S4). As a result, the process shown in Figure 3(a) is completed.

[0082] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1, 2, 3(b), and 4 to 6. Figure 3(b) is a flowchart showing the processing flow during substrate processing (step S2 in Figure 3(a)). As shown in Figure 3(b), substrate processing includes a chemical solution discharge process (step S22), a process of bringing the contact member 3 into contact with the liquid surface (step S24), and a rinsing process (step S26). Figure 4 is a schematic diagram showing the substrate processing section 2 during chemical solution discharge (step S22 in Figure 3(b)). Figure 5 is a schematic diagram showing the substrate processing section 2 when bringing the contact member 3 into contact with the liquid surface (step S24 in Figure 3(b)). Figure 6 is a schematic diagram showing the substrate processing section 2 during the rinsing process (step S26 in Figure 3(b)).

[0083] As shown in Figure 3(b), when the control device 101 (control unit 102) starts substrate processing (step S2 in Figure 3(a)), it controls the chemical nozzle moving unit 62 to move the first nozzle 6 to the processing position and controls the chemical supply unit 61 to discharge a certain amount of chemical from the first nozzle 6 (step S22).

[0084] More specifically, as shown in Figure 4, the control device 101 (control unit 102) controls the substrate rotating unit 8 to rotate the substrate W at a first rotational speed. The first rotational speed is, for example, 5 rpm to 10 rpm. In other words, the substrate rotating unit 8 rotates the substrate W at a low speed. As a result, a certain amount of the chemical solution is held on the substrate W without spilling off. For example, as shown in Figure 4, a liquid film LM1 of the chemical solution may be formed on the upper surface of the substrate W.

[0085] As shown in Figure 3(b), after the drug solution is dispensed, the control device 101 (control unit 102) controls the contact member moving unit 5 to move the contact member 3 from the second retracted position to the contact position, bringing the contact member 3 into contact with the surface of the drug solution (step S24).

[0086] More specifically, as shown in Figure 5, the control device 101 (control unit 102) controls the liquid nozzle moving unit 62 to move the first nozzle 6 to the first retracted position. The control device 101 (control unit 102) also stops the rotation of the substrate holding unit 7 and the substrate W. After the rotation of the substrate holding unit 7 and the substrate W stops, the control device 101 (control unit 102) moves the contact member 3 to the contact position. As a result, the contact member 3 comes into contact with the liquid film LM1 of the liquid. In addition, the engagement pin 73 engages with the engagement hole 31b of the contact member 3.

[0087] According to this embodiment, when the contact member 3 comes into contact with the liquid film LM1 of the chemical solution, the chemical solution held on the upper surface of the substrate W is sandwiched between the substrate W and the contact member 3. As a result, the chemical solution spreads more easily to the edges of the substrate W. In other words, the edges of the substrate W are more easily covered with the chemical solution. Therefore, for example, the in-plane uniformity of the etching amount by dilute hydrofluoric acid (DHF) is improved.

[0088] In this embodiment, after the contact member 3 makes contact with the liquid film LM1 of the chemical solution, the contact member holder 4 descends further. As a result, the contact member 3 floats on the liquid film LM1 of the chemical solution, and the engagement between the contact member holder 4 and the contact member 3 is released. In this embodiment, the engagement pin 73 is cylindrical and extends vertically. The engagement hole 31b also extends vertically. Therefore, the contact member 3 can move freely up and down. As a result, the liquid film LM1 of the chemical solution is pushed by the weight of the contact member 3, making it easier for the chemical solution to spread to the edge of the substrate W.

[0089] The control device 101 (control unit 102) moves the contact member 3 to the contact position, and when the engagement pin 73 engages with the engagement hole 31b of the contact member 3, it controls the substrate rotation unit 8 to rotate the substrate W at a first rotational speed. After a certain period of time has elapsed since the start of rotation of the substrate W, the control device 101 (control unit 102) controls the substrate rotation unit 8 to increase the rotational speed of the substrate W from the first rotational speed to the second rotational speed. For example, the second rotational speed is 200 rpm. At this time, the engagement between the contact member holding unit 4 and the contact member 3 is released, and the engagement pin 73 is engaged with the engagement hole 31b of the contact member 3, so the contact member 3 rotates together with the substrate W.

[0090] According to this embodiment, the substrate W is rotated while the liquid chemical held on the upper surface of the substrate W is sandwiched between the substrate W and the contact member 3. As a result, a liquid flow of the liquid chemical is generated on the substrate W. Therefore, the liquid chemical spreads more easily to the edge of the substrate W.

[0091] The control device 101 (control unit 102) increases the rotation speed of the substrate W from the first rotation speed to the second rotation speed, and after a certain period of time has elapsed, controls the substrate rotation unit 8 to stop the rotation of the substrate W, the substrate holding unit 7, and the contact member 3. Once the rotation of the substrate W, the substrate holding unit 7, and the contact member 3 has stopped, the control device 101 (control unit 102) controls the contact member movement unit 5 to raise the contact member holding unit 4. As a result, the contact member 3 is supported by the contact member holding unit 4 and rises together with the contact member holding unit 4, moving to the second retracted position.

[0092] When the contact member 3 moves to the second retracted position, the control device 101 (control unit 102) controls the rinse liquid supply unit 91 to discharge rinse liquid from the second nozzle 9, as shown in Figures 3(b) and 6 (step S26).

[0093] More specifically, the control device 101 (control unit 102) controls the substrate rotation unit 8 to rotate the substrate W at a third rotational speed before discharging the rinsing liquid from the second nozzle 9. The third rotational speed is, for example, between 800 rpm and 1200 rpm. When the rotational speed of the substrate W reaches the third rotational speed, the control device 101 (control unit 102) discharges the rinsing liquid from the second nozzle 9. As a result, a liquid film LM2 of the rinsing liquid is formed on the substrate W, as shown in Figure 6. In other words, the liquid film on the substrate W is replaced from the liquid film LM1 of the chemical solution to the liquid film LM2 of the rinsing liquid. After a certain amount of time has elapsed since the start of rinsing liquid discharge, the process moves to the drying process (step S3 in Figure 3(a)).

[0094] Embodiment 1 of the present invention has been described above with reference to Figures 1 to 6. According to this embodiment, since it is sufficient to discharge a fixed amount of chemical solution onto the substrate W, the consumption of chemical solution (processing solution) can be reduced compared to a configuration in which the chemical solution is continuously discharged onto the substrate W to be processed.

[0095] In the embodiment described with reference to Figures 1 to 6, the control device 101 (control unit 102) rotated the substrate W while the contact member 3 was in contact with the liquid film LM1 of the chemical solution. However, the rotation of the substrate W may be stopped while the contact member 3 is in contact with the liquid film LM1 of the chemical solution.

[0096] Furthermore, in the embodiment described with reference to Figures 1 to 6, the chemical solution was discharged toward a rotating substrate W, but the chemical solution may also be discharged toward a stationary substrate W. Hereinafter, modifications of the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 7(a) and 7(b).

[0097] Figure 7(a) schematically shows Modification 1 of the substrate processing apparatus 100 of this embodiment. Figure 7(b) schematically shows Modification 2 of the substrate processing apparatus 100 of this embodiment. More specifically, Figures 7(a) and 7(b) schematically show the substrate processing unit 2 during chemical dispensing (step S22 in Figure 3(b)).

[0098] As shown in Figures 7(a) and 7(b), the control device 101 (control unit 102) may discharge a fixed amount of liquid chemical from the first nozzle 6 even when the substrate W is not rotating. In the example shown in Figure 7(a), the fixed amount of liquid chemical does not spread to the edge of the substrate W, but remains in the center of the substrate W. In this embodiment, since the liquid chemical is pushed by the weight of the contact member 3, even if the liquid chemical remains in the center of the substrate W when it is discharged, it is easy for the liquid chemical to spread to the edge of the substrate W.

[0099] Alternatively, as shown in Figure 7(b), the amount of chemical solution discharged from the first nozzle 6 (a fixed amount) may be enough to cover the entire upper surface of the substrate W when the substrate W is not rotating. In the example shown in Figure 7(b), the entire upper surface of the substrate W is covered with the chemical solution before the contact member 3 comes into contact with it, making it less likely for there to be a difference in contact time with the chemical solution between the center and edges of the substrate W. As a result, for example, the in-plane uniformity of the etching amount by dilute hydrofluoric acid (DHF) is improved.

[0100] Next, with reference to Figure 8, a third modification of the substrate processing apparatus 100 of this embodiment will be described. Figure 8 is a flowchart showing another example of the processing flow during substrate processing (step S2 in Figure 3(a)). The processing shown in Figure 8 has an additional step S28 compared to the processing shown in Figure 3(b).

[0101] Specifically, after a certain amount of time has elapsed since the start of rinsing liquid discharge, the control device 101 (control unit 102) determines whether or not the processes in steps S22, S24, and S26 have been repeated N times (step S28). If the control device 101 (control unit 102) determines that the processes in steps S22, S24, and S26 have not been repeated N times (No in step S28), the process returns to step S22. On the other hand, if the control device 101 (control unit 102) determines that the processes in steps S22, S24, and S26 have been repeated N times (Yes in step S28), the process moves to the drying process (step S3 in Figure 3(a)).

[0102] As shown in the example in Figure 8, by changing the type of chemical solution used in step S22, it becomes possible to process the substrate using multiple types of chemical solutions. Therefore, for example, RCA cleaning can be performed.

[0103] [Embodiment 2] Next, Embodiment 2 of the present invention will be described with reference to Figures 1 to 9. However, only the differences from Embodiment 1 will be described, and the same matters as in Embodiment 1 will be omitted. Embodiment 2 differs from Embodiment 1 in the configuration of the contact member 3 and the contact member holding part 4.

[0104] Figure 9(a) is a schematic diagram showing a part of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. More specifically, Figure 9(a) schematically shows the substrate processing unit 2 when the contact member 3 is brought into contact with the liquid surface (step S24 in Figure 3(b)).

[0105] As shown in Figure 9(a), the substrate processing apparatus 100 of this embodiment includes a gas supply unit 42. The contact member 3 has a first labyrinth structure LA1. The contact member holding unit 4 has a second labyrinth structure LA2 and a gas inlet hole 4a.

[0106] The first labyrinth structure LA1 is formed on the supported portion 33 of the contact member 3. The first labyrinth structure LA1 has an uneven shape. Specifically, the first labyrinth structure LA1 includes a plurality of protrusions. The plurality of protrusions are parallel to each other. Thus, a groove is formed between two adjacent protrusions. Each protrusion is annular and extends along the circumferential direction.

[0107] The second labyrinth structure LA2 is formed on the support portion 41 of the contact member holding portion 4. The second labyrinth structure LA2 faces the first labyrinth structure LA1. The second labyrinth structure LA2 has the same shape as the first labyrinth structure LA1.

[0108] The multiple protrusions of the first labyrinth structure LA1 are positioned radially offset from the multiple protrusions of the second labyrinth structure LA2. Specifically, the multiple protrusions of the first labyrinth structure LA1 are located within the multiple grooves of the second labyrinth structure LA2, and the multiple protrusions of the second labyrinth structure LA2 are located within the multiple grooves of the first labyrinth structure LA1.

[0109] The gas inlet hole 4a connects the inside and outside of the contact member holding part 4. The gas supply unit 42 is controlled by the control device 101 (control unit 102) to supply gas to the gas inlet hole 4a. As a result, gas flows into the inside of the contact member holding part 4.

[0110] Specifically, the gas supply unit 42 includes a gas supply pipe 421 and a third on-off valve 422. The processing chamber 2a, described with reference to Figure 2, houses a portion of the gas supply pipe 421. The third on-off valve 422 may be housed in the fluid box 10B, described with reference to Figure 1.

[0111] The gas supply pipe 421 circulates the gas to the gas inlet hole 4a. The gas may be an inert gas such as nitrogen gas. Alternatively, the gas may be clean air. The third on-off valve 422 is controlled by the control device 101 (control unit 102). The configuration of the gas supply pipe 421 and the third on-off valve 422 is the same as that of the chemical solution pipe 611 and the first on-off valve 612 described with reference to Figure 2, so a detailed explanation is omitted.

[0112] In this embodiment, the pressure relief mechanism AK includes a control device 101 (control unit 102) and a gas supply unit 42. Specifically, the control device 101 (control unit 102) controls the gas supply unit 42 to supply gas between the support unit 41 and the supported unit 33.

[0113] More specifically, as shown in Figure 9(a), the control device 101 (control unit 102) controls the gas supply unit 42 to introduce gas into the contact member holding unit 4. After the contact member 3 comes into contact with the liquid film LM1 of the chemical solution, the contact member holding unit 4 descends further, creating a gap between the first labyrinth structure LA1 and the second labyrinth structure LA2. As a result, an airflow is generated in the gap between the first labyrinth structure LA1 and the second labyrinth structure LA2, creating pressure that pushes the contact member 3 upward from below. Therefore, the pressure applied to the liquid film LM1 of the chemical solution when the engagement between the contact member 3 and the contact member holding unit 4 is released is relieved.

[0114] Next, the substrate processing apparatus 100 of this embodiment will be further described with reference to Figures 9(a) and 9(b). As shown in Figure 9(a), the substrate holding portion 7 may have a plurality of engagement pins 73A. The engagement pins 73A and the engagement pins 73 shown in Figure 2 have different shapes. Specifically, the shape of the engagement pins 73A is conical. More specifically, the diameter of the uppermost part of the engagement pin 73A is smaller than the diameter of the engagement hole 31b of the contact member 3, and the diameter of the lowermost part of the engagement pin 73A is larger than the diameter of the engagement hole 31b of the contact member 3. As a result, the contact member 3 can only descend partway down the engagement pins 73A. In other words, the engagement pins 73A restrict the lower limit position of the contact member 3. The engagement pins 73A are an example of a "restricting member". According to this embodiment, since the lower limit position of the contact member 3 can be restricted, for example, positioning when moving the contact member 3 to the contact position becomes easier.

[0115] Furthermore, according to this embodiment, the first labyrinth structure LA1 is included in the supported portion 33 of the contact member 3, and the second labyrinth structure LA2 is included in the support portion 41 of the contact member holding portion 4. As a result, the contact member 3 is less likely to shift horizontally with respect to the first rotation axis AX1 (see Figure 2). Consequently, the engagement pin 73A can be more reliably engaged with the engagement hole 31b.

[0116] In the example shown in Figure 9(a), the engagement pin 73A was conical, but the shape that restricts the lower limit position of the contact member 3 is not limited to a conical shape. Figure 9(b) shows another example of the engagement pin 73A. As shown in Figure 9(b), the engagement pin 73A may have a stepped shape, for example. In this case, the lower limit position of the contact member 3 is restricted at the position of the step.

[0117] Embodiment 2 of the present invention has been described above with reference to Figures 1 to 9. According to this embodiment, the amount of chemical solution (processing liquid) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing liquid) when the contact member 3 comes into contact with the chemical solution (processing liquid) on the substrate W can be reduced.

[0118] In this embodiment, the substrate holder 7 has an engagement pin 73A, but as in Embodiment 1, the substrate holder 7 may also have an engagement pin 73 (a conical engagement pin).

[0119] [Embodiment 3] Next, Embodiment 3 of the present invention will be described with reference to Figure 10. However, only the differences from Embodiments 1 and 2 will be described, and the same matters as in Embodiments 1 and 2 will be omitted. Embodiment 3 differs from Embodiments 1 and 2 in the configuration of the pressure relief mechanism AK.

[0120] Figure 10 is a schematic diagram showing a part of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. More specifically, Figure 10 schematically shows the substrate processing unit 2 when the contact member 3 is brought into contact with the liquid surface (step S24 in Figure 3(b)).

[0121] As shown in Figure 10, the substrate processing apparatus 100 of this embodiment further comprises a gas supply unit 43. The contact member holding unit 4 further comprises a gas inflow passage 4b. Hereinafter, the gas supply unit 42 may be referred to as the "first gas supply unit 42". Similarly, the gas supply unit 43 may be referred to as the "second gas supply unit 43".

[0122] The gas inflow passage 4b ​​connects the inside and outside of the contact member holding section 4. One end (discharge port) of the gas inflow passage 4b ​​is located inside the second labyrinth structure LA2. The second gas supply section 43 is controlled by the control device 101 (control unit 102) to supply gas to the gas inflow passage 4b. As a result, gas is discharged upward from the second labyrinth structure LA2. In other words, gas is discharged from the second labyrinth structure LA2 toward the first labyrinth structure LA1.

[0123] Specifically, the second gas supply unit 43 includes a gas supply pipe 431 and a fourth on-off valve 432. Hereinafter, the gas supply pipe 431 may be referred to as the "second gas supply pipe 431." The processing chamber 2a, described with reference to Figure 2, houses a portion of the second gas supply pipe 431. The fourth on-off valve 432 may be housed in the fluid box 10B, described with reference to Figure 1.

[0124] The second gas supply pipe 431 circulates the gas to the gas inflow passage 4b. The gas may be an inert gas such as nitrogen gas. Alternatively, the gas may be clean air. The fourth on-off valve 432 is controlled by the control device 101 (control unit 102). The configuration of the second gas supply unit 43 is the same as that of the first gas supply unit 42, so a detailed explanation is omitted.

[0125] In this embodiment, the pressure relief mechanism AK further includes a second gas supply unit 43. Specifically, as shown in Figure 10, the control device 101 (control unit 102) controls the second gas supply unit 43 to supply gas between the support unit 41 and the supported unit 33. As a result, pressure is generated that pushes the contact member 3 upward from below. Therefore, the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W can be further relieved.

[0126] More specifically, the control device 101 (control unit 102) controls the second gas supply unit 43 to discharge gas from the second labyrinth structure LA2 toward the first labyrinth structure LA1. In other words, gas is discharged from the support unit 41 toward the supported unit 33. Therefore, since downward pressure is applied to the supported unit 33, the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W can be reduced.

[0127] Embodiment 3 of the present invention has been described above with reference to Figure 10. According to this embodiment, the amount of chemical solution (processing liquid) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing liquid) when the contact member 3 comes into contact with the chemical solution (processing liquid) on the substrate W can be reduced.

[0128] In this embodiment, the substrate processing apparatus 100 includes a first gas supply unit 42 and a second gas supply unit 43. However, the substrate processing apparatus 100 may also include only the second gas supply unit 43 among the first gas supply unit 42 and the second gas supply unit 43.

[0129] [Embodiment 4] Next, Embodiment 4 of the present invention will be described with reference to Figures 11 to 13. However, only the differences from Embodiments 1 to 3 will be described, and the same matters as in Embodiments 1 to 3 will be omitted. Embodiment 4 differs from Embodiments 1 to 3 in the configuration of the substrate processing unit 2.

[0130] Figure 11 is a schematic cross-sectional view showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 11, the substrate processing apparatus 100 of this embodiment does not include the second nozzle 9 and the rinse liquid supply unit 91 described with reference to Figure 2. The substrate processing apparatus 100 of this embodiment is equipped with a third nozzle 44 instead of the second nozzle 9. In addition, the contact member 3 further has a discharge hole 31c.

[0131] The third nozzle 44 is positioned within the internal space of the contact member holding portion 4. The third nozzle 44 extends from the contact member holding portion 4 into the interior of the cylindrical portion 32 of the contact member 3. The discharge hole 31c is formed in the contact portion 31. The discharge hole 31c penetrates the contact portion 31. The discharge hole 31c is positioned opposite the tip of the third nozzle 44.

[0132] Figure 12(a) shows the third nozzle 44, the rinse liquid supply unit 45, and the third gas supply unit 46 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 12(a), the substrate processing apparatus 100 of this embodiment includes the rinse liquid supply unit 45 in place of the rinse liquid supply unit 91 described with reference to Figure 2. Furthermore, the substrate processing apparatus 100 of this embodiment further includes the third gas supply unit 46.

[0133] As shown in Figure 12(a), the third nozzle 44 includes a processing liquid channel 44a and a gas channel 44b. The rinse liquid supply unit 45 is controlled by the control device 101 (control unit 102) to supply rinse liquid to the processing liquid channel 44a. The third gas supply unit 46 is also controlled by the control device 101 (control unit 102) to supply gas to the gas channel 44b.

[0134] Specifically, the rinse liquid supply unit 45 includes a rinse liquid pipe 451 and a fifth on-off valve 452. The processing chamber 2a houses a portion of the rinse liquid pipe 451. The fifth on-off valve 452 may be housed in the fluid box 10B described with reference to Figure 1. The rinse liquid pipe 451 circulates the rinse liquid to the third nozzle 44. The configuration of the rinse liquid supply unit 45 is substantially the same as that of the rinse liquid supply unit 91 described with reference to Figure 2, so a detailed explanation is omitted.

[0135] The third gas supply unit 46 includes a gas supply pipe 461 and a sixth on-off valve 462. Hereinafter, the gas supply pipe 461 may be referred to as the "third gas supply pipe 461". The processing chamber 2a, described with reference to Figure 2, houses a portion of the third gas supply pipe 461. The sixth on-off valve 462 may be housed in the fluid box 10B, described with reference to Figure 1.

[0136] The third gas supply pipe 461 circulates the gas to the third nozzle 44. The gas may be an inert gas such as nitrogen gas. Alternatively, the gas may be clean air. The sixth on-off valve 462 is controlled by the control device 101 (control unit 102). The configuration of the third gas supply unit 46 is the same as that of the first gas supply unit 42 described with reference to Figure 9(a), so a detailed explanation is omitted.

[0137] Next, the third nozzle 44 will be described with reference to Figures 12(a) to 12(c). Figure 12(b) is a side view of the third nozzle 44. Figure 12(c) is a bottom view of the third nozzle 44.

[0138] As shown in Figure 12(a), the processing liquid channel 44a extends to the tip of the third nozzle 44. As shown in Figure 12(c), the third nozzle 44 has a processing liquid discharge port 44c. The processing liquid discharge port 44c is located at the tip of the third nozzle 44. One end of the processing liquid channel 44a communicates with the processing liquid discharge port 44c. The rinsing liquid that flows into the processing liquid channel 44a from the rinsing liquid supply unit 45 is discharged from the processing liquid discharge port 44c (the tip of the third nozzle 44).

[0139] As shown in Figure 12(a), the gas flow path 44b extends toward the side of the third nozzle 44. As shown in Figure 12(b), the third nozzle 44 has a gas discharge port 44d. The gas discharge port 44d is provided on the side of the third nozzle 44. One end of the gas flow path 44b communicates with the gas discharge port 44d. The gas flowing into the gas flow path 44b from the third gas supply unit 46 is discharged from the gas discharge port 44d (on the side of the third nozzle 44).

[0140] Figure 13(a) schematically shows the substrate processing unit 2 when the contact member 3 is brought into contact with the liquid surface (step S24 in Figure 3(b)). Similar to Embodiment 1, the control device 101 (control unit 102) moves the contact member 3 to the contact position after the rotation of the substrate holding unit 7 and the substrate W stops. As a result, the contact member 3 comes into contact with the liquid film LM1 of the chemical solution. Furthermore, after the contact member 3 comes into contact with the liquid film LM1 of the chemical solution, the control device 101 (control unit 102) lowers the contact member holding unit 4 further. As a result, the contact member 3 floats on the liquid film LM1 of the chemical solution, and the engagement between the contact member holding unit 4 and the contact member 3 is released. Therefore, similar to Embodiment 1, the chemical solution spreads more easily to the edge of the substrate W.

[0141] As explained with reference to Figure 9(a), when a labyrinth structure (first labyrinth structure LA1 and second labyrinth structure LA2) is formed on the supported portion 33 of the contact member 3 and the support portion 41 of the contact member holding portion 4, an airflow is generated between the supported portion 33 of the contact member 3 and the support portion 41 of the contact member holding portion 4 by the gas discharged from the side of the third nozzle 44. Therefore, similar to Embodiment 2, the pressure applied to the liquid film LM1 of the chemical solution when the engagement between the contact member 3 and the contact member holding portion 4 is released can be relieved.

[0142] Figure 13(b) schematically shows the substrate processing unit 2 during the rinsing process (step S26 in Figure 3(b)). As shown in Figure 13(b), in this embodiment, the contact member 3 is located at the processing position during the rinsing process. The processing position is located above the contact position.

[0143] During the rinsing process, the control device 101 (control unit 102) controls the rinse liquid supply unit 45 to discharge rinse liquid from the third nozzle 44. The discharge hole 31c connects the inner space of the cylindrical portion 32 to the outside, and the rinse liquid discharged from the third nozzle 44 accumulates inside the cylindrical portion 32 of the contact member 3 and is discharged from the discharge hole 31c toward the substrate W.

[0144] Embodiment 4 of the present invention has been described above with reference to Figures 11 to 13. According to this embodiment, the amount of chemical solution (processing solution) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing solution) when the contact member 3 comes into contact with the chemical solution (processing solution) on the substrate W can be reduced.

[0145] In this embodiment, the contact member 3 was positioned at the processing location during the rinsing process, but the contact member 3 may also be positioned at the contact location during the rinsing process.

[0146] [Embodiment 5] Next, Embodiment 5 of the present invention will be described with reference to Figure 14. However, only the differences from Embodiments 1 to 4 will be described, and the same matters as in Embodiments 1 to 4 will be omitted. Embodiment 5 differs from Embodiments 1 to 4 in the configuration of the substrate processing unit 2.

[0147] Figure 14 is a schematic diagram showing a part of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. More specifically, Figure 14 schematically shows the substrate processing unit 2 when the contact member 3A is brought into contact with the liquid surface (step S24 in Figure 3(b)). As shown in Figure 14, in this embodiment, the substrate processing unit 2 has a contact member 3A.

[0148] The contact member 3A includes a contact portion 31A, a support base portion 411, a cylindrical portion 32, and a supported portion 33. The contact portion 31A contacts the chemical solution on the substrate W and covers the chemical solution on the substrate W. In this embodiment, the contact portion 31A is disc-shaped. The diameter of the contact portion 31A is approximately the same as the diameter of the substrate W. The lower surface of the contact portion 31A is a liquid contact surface 31a, similar to the contact portion 31 described with reference to Figure 2. The contact portion 31A has a discharge hole 31c, similar to the contact portion 31 described with reference to Figure 11.

[0149] The support base portion 411 is disc-shaped, and its diameter is larger than the diameter of the substrate W. The support base portion 411 supports the contact portion 31A. For example, the contact portion 31A may be coupled to the support base portion 411. The support base portion 411 has a plurality of engagement holes 411a and a communication hole 411b. The plurality of engagement holes 411a correspond to the engagement holes 31b described with reference to Figure 2. The communication hole 411b penetrates the support base portion 411. The communication hole 411b is located opposite the tip of the third nozzle 44. The communication hole 411b communicates with the discharge hole 31c.

[0150] Embodiment 5 of the present invention has been described above with reference to Figure 14. According to this embodiment, the amount of chemical solution (processing liquid) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing liquid) when the contact member 3 comes into contact with the chemical solution (processing liquid) on the substrate W can be reduced.

[0151] [Embodiment 6] Next, Embodiment 6 of the present invention will be described with reference to Figures 15 to 17. However, only the differences from Embodiments 1 to 5 will be described, and the same matters as in Embodiments 1 to 5 will be omitted. Embodiment 6 differs from Embodiments 1 to 5 in the configuration of the substrate processing unit 2.

[0152] Figure 15(a) is a schematic diagram showing a part of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. Figure 15(b) is a schematic cross-sectional view showing an enlarged view of a part of the contact member 3B and the contact member holding part 4.

[0153] As shown in Figure 15(a), the substrate processing unit 2 has a contact member 3B and a substrate holding unit 7A. The substrate processing apparatus 100 also includes a fourth gas supply unit 47 and a suction unit 48. Although not shown, the substrate processing unit 2 further includes a processing chamber 2a, a first nozzle 6, a chemical nozzle moving unit 62, a second nozzle 9, and a cup lifting unit 111, similar to the substrate processing unit 2 described with reference to Figure 2. The substrate processing apparatus 100 also further includes a chemical supply unit 61 and a rinse liquid supply unit 91.

[0154] The contact member 3B includes a contact portion 31, a cylindrical portion 32, and a supported portion 33, similar to the contact member 3 described with reference to Figure 2. Unlike the contact member 3 described with reference to Figure 2, the contact member 3B does not include an engagement hole 31b. Unlike the contact member 3 described with reference to Figure 2, the contact portion 31 of the contact member 3B has approximately the same diameter as the substrate W.

[0155] The substrate holder 7A, like the substrate holder 7 described with reference to Figure 2, has a plurality of chuck members 71 and a spin base 72. Unlike the substrate holder 7 described with reference to Figure 2, the substrate holder 7A does not include an engagement pin 73.

[0156] As shown in Figure 15(b), the contact member holding portion 4 has a gas inflow passage 41a and a suction passage 41b. The discharge port of the gas inflow passage 41a is provided on the support portion 41. More specifically, the discharge port of the gas inflow passage 41a is positioned opposite the supported portion 33 of the contact member 3B. Similarly, the suction port of the suction passage 41b is provided on the support portion 41. More specifically, the suction port of the suction passage 41b is positioned opposite the supported portion 33 of the contact member 3B.

[0157] The fourth gas supply unit 47 introduces gas into the gas inflow passage 41a. As a result, gas is discharged from the outlet of the gas inflow passage 41a. The gas discharged from the outlet of the gas inflow passage 41a is ejected towards the supported portion 33 of the contact member 3B. As a result, an upward pressure is applied to the supported portion 33 of the contact member 3B, causing the supported portion 33 to be separated (purged) from the support portion 41.

[0158] Specifically, the fourth gas supply unit 47 includes a gas supply pipe 471 and a seventh on-off valve 472. The processing chamber 2a, described with reference to Figure 2, houses a portion of the gas supply pipe 471. The seventh on-off valve 472 may be housed in the fluid box 10B, described with reference to Figure 1. The gas supply pipe 471 circulates the gas to the gas inflow passage 41a. The configuration of the fourth gas supply unit 47 is the same as that of the first gas supply unit 42, described with reference to Figure 9(a), so a detailed explanation is omitted.

[0159] In this embodiment, the pressure relief mechanism AK includes a control device 101 (control unit 102) and a fourth gas supply unit 47. Specifically, when the contact member 3B comes into contact with the chemical solution, the control device 101 (control unit 102) controls the fourth gas supply unit 47 to eject gas from the discharge port of the gas inlet passage 41a, supplying gas between the support unit 41 and the supported unit 33. As a result, pressure is generated that pushes the contact member 3 upward from below. Therefore, the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W can be further relieved.

[0160] More specifically, gas is discharged from the support portion 41 toward the supported portion 33. Therefore, since downward and upward pressure is applied to the supported portion 33, the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W can be further reduced.

[0161] The suction unit 48 draws gas from the suction channel 41b. As a result, the supported part 33 is adsorbed onto the support part 41. Specifically, the suction unit 48 includes a suction pipe 481, an eighth on-off valve 482, and a suction mechanism 483. The processing chamber 2a, described with reference to Figure 2, houses a portion of the suction pipe 481. The eighth on-off valve 482 and the suction mechanism 483 may be housed in the fluid box 10B, described with reference to Figure 1.

[0162] The suction pipe 481 is a tubular component through which gas flows. The suction pipe 481 is in communication with the suction passage 41b. The eighth on-off valve 482 is interposed in the suction pipe 481. The eighth on-off valve 482 controls the flow of gas through the suction pipe 481 and the stopping of its flow. The configuration of the eighth on-off valve 482 is the same as that of the first on-off valve 612, which was described with reference to Figure 2, so a detailed explanation is omitted.

[0163] The suction mechanism 483 is connected to the suction piping 481. The operation of the suction mechanism 483 is controlled by the control device 101 (control unit 102). When the suction mechanism 483 is driven, gas is drawn from the suction passage 41b into the suction piping 481. The suction mechanism 483 includes, for example, a vacuum pump.

[0164] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 15 to 17. Figures 16 and 17 schematically show the operation of the substrate processing apparatus 2 after the chemical solution is discharged from the first nozzle 6 onto the upper surface of the substrate W.

[0165] As shown in Figure 16(a), when the contact member 3B is in the second retracted position, the control device 101 (control unit 102) controls the suction unit 48 to cause the supported part 33 to be attracted to the support unit 41.

[0166] As shown in Figure 16(b), when the chemical solution is discharged from the first nozzle 6 onto the upper surface of the substrate W, the control device 101 (control unit 102) stops the suction mechanism 483. As a result, the adsorption of the supported part 33 is released. The control device 101 (control unit 102) also controls the fourth gas supply unit 47 to eject gas from the discharge port of the gas inflow passage 41a. As a result, the supported part 33 is separated from the support unit 41 (purged). The control device 101 (control unit 102) controls the contact member moving unit 5 to move the contact member 3B from the second retracted position to the contact position. As a result, as shown in Figure 16(c), the liquid contact surface 31a of the contact member 3B comes into contact with the liquid film LM1 of the chemical solution.

[0167] In this embodiment, when the liquid contact surface 31a of the contact member 3B comes into contact with the liquid film LM1 of the chemical solution, gas is discharged from the support portion 41 toward the supported portion 33. Therefore, since downward pressure is applied to the supported portion 33, the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W can be further reduced.

[0168] As shown in Figures 17(a) and 17(b), while the contact member 3B moves from the contact position to the second retracted position, the control device 101 (control unit 102) continues to eject gas from the discharge port of the gas inlet passage 41a.

[0169] As shown in Figure 17(b), after the contact member 3B moves to the second retracted position, the control device 101 (control unit 102) controls the fourth gas supply unit 47 to stop the ejection of gas from the discharge port of the gas inlet passage 41a. Then, the control device 101 (control unit 102) drives the suction mechanism 483 to cause the supported part 33 to be attracted to the support part 41.

[0170] Embodiment 6 of the present invention has been described above with reference to Figures 15 to 17. According to this embodiment, the amount of chemical solution (processing liquid) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing liquid) when the contact member 3 comes into contact with the chemical solution (processing liquid) on the substrate W can be reduced.

[0171] [Embodiment 7] Next, Embodiment 7 of the present invention will be described with reference to Figures 18 to 20. However, only the differences from Embodiments 1 to 6 will be described, and the same matters as in Embodiments 1 to 6 will be omitted. Embodiment 7 differs from Embodiments 1 to 6 in the configuration of the substrate processing unit 2.

[0172] Figure 18 is a schematic diagram showing a part of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 18, the substrate processing unit 2 has a contact member 3A, a contact member holding unit 4, a substrate holding unit 7B, and a pin lifting unit 75. The substrate processing apparatus 100 also includes a fourth gas supply unit 47, a suction unit 48, and a suction unit 76. Although not shown, the substrate processing unit 2 further includes a processing chamber 2a, a first nozzle 6, a chemical nozzle moving unit 62, a second nozzle 9, and a cup lifting unit 111, similar to the substrate processing unit 2 described with reference to Figure 2. The substrate processing apparatus 100 also further includes a chemical supply unit 61 and a rinse liquid supply unit 91. Hereinafter, the suction unit 48 may be referred to as the "first suction unit 48," and the suction unit 76 may be referred to as the "second suction unit 76."

[0173] In this embodiment, the contact member 3A does not include the discharge hole 31c, engagement hole 411a, and communication hole 411b shown in Figure 14. The substrate holding portion 7B has a plurality of chuck members 71A and a spin base 72B. Each chuck member 71A has a suction channel 71a. The spin base 72B has a plurality of suction channels 72a, a plurality of housing portions 72b, and a plurality of lifting pins 74. The lifting pins 74 are an example of a "lifting support member".

[0174] Each suction channel 71a extends vertically. The upper end of each suction channel 71a forms a gas intake port. The lower end of each suction channel 71a communicates with the corresponding suction channel 72a of the spin base 72.

[0175] Each suction channel 72a extends vertically. The upper end of each suction channel 72a communicates with the lower end of the corresponding suction channel 71a. Each housing section 72b houses a lifting pin 74. Specifically, the housing section 72b extends vertically. The upper end of the housing section 72b is open. The lifting pin 74 extends vertically. The lifting pin 74 is housed in the housing section 72b so as to be able to move up and down.

[0176] The second suction unit 76 is controlled by the control device 101 (control unit 102) to draw gas from the suction channel 72a. As a result, gas is drawn in from the suction channel 71a. In this embodiment, when the contact member 3A is in contact with the chemical solution, the lower surface of the support base 411 comes into contact with the upper surfaces of the multiple chuck members 71A. The upper surfaces of the chuck members 71A have suction ports for the suction channel 71a. Therefore, when the second suction unit 76 draws in gas, the support base 411 is attracted to the upper surfaces of the multiple chuck members 71A. In other words, the contact member 3A is attracted to the multiple chuck members 71A.

[0177] Specifically, the second suction section 76 includes a suction pipe 761, a ninth on-off valve 762, and a second suction mechanism 763. The processing chamber 2a, described with reference to Figure 2, houses a portion of the suction pipe 761. The ninth on-off valve 762 and the second suction mechanism 763 may be housed in the fluid box 10B, described with reference to Figure 1. The suction pipe 761 communicates with the suction passage 72a. The configuration of the second suction section 76 is the same as that of the first suction section 48, so a detailed explanation is omitted.

[0178] The pin lifting unit 75 is controlled by the control device 101 (control unit 102) to raise and lower a plurality of lifting pins 74. The pin lifting unit 75 may include an actuator such as an air cylinder.

[0179] In this embodiment, the pressure relief mechanism AK includes a lifting pin 74, a pin lifting unit 75, and a control device 101 (control unit 102). Specifically, the control device 101 (control unit 102) maintains a state in which the multiple lifting pins 74 are in contact with the contact member 3A from below, and moves the contact member 3A toward the chemical solution on the substrate W to bring it into contact with the chemical solution. As a result, the contact member 3A can be brought into contact with the chemical solution while being supported from below by the multiple lifting pins 74. Therefore, the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W can be relieved.

[0180] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 18 to 20. Figures 19 and 20 schematically show the operation of the substrate processing apparatus 2 after the chemical solution is discharged from the first nozzle 6 onto the upper surface of the substrate W.

[0181] As shown in Figure 19(a), when the contact member 3A is in the second retracted position, the control device 101 (control unit 102) controls the first suction unit 48 to cause the supported unit 33 to be attracted to the support unit 41.

[0182] As shown in Figure 19(b), when the chemical solution is discharged from the first nozzle 6 onto the upper surface of the substrate W, the control device 101 (control unit 102) stops the first suction mechanism 483. As a result, the adsorption of the supported part 33 is released. The control device 101 (control unit 102) also controls the fourth gas supply unit 47 to eject gas from the discharge port of the gas inlet passage 41a. As a result, the supported part 33 is separated from (purged from) the support unit 41. The control device 101 (control unit 102) controls the pin lifting unit 75 to raise the multiple lifting pins 74. Specifically, the control device 101 (control unit 102) raises each lifting pin 74 until its upper end contacts the support base unit 411. As a result, the contact member 3A is supported from below by the multiple lifting pins 74.

[0183] When the upper end of each lifting pin 74 contacts the support base portion 411, the control device 101 (control unit 102) controls the contact member movement portion 5 to move the contact member 3A from the second retracted position to the contact position. Furthermore, the control device 101 (control unit 102) controls the pin lifting portion 75 to lower the multiple lifting pins 74. At this time, the control device 101 (control unit 102) controls the contact member movement mechanism 53 (see Figure 2) and the pin lifting portion 75 so that the movement speeds of the contact member 3A and the lifting pins 74 are equal.

[0184] As shown in Figure 19(c), when the contact member 3B moves to the contact position, the control device 101 (control unit 102) controls the second suction unit 76 to cause the contact member holding unit 4 to be attracted to the multiple chuck members 71A. As shown in Figures 19(c) and 20(a), the control device 101 (control unit 102) continues to lower the multiple lifting pins 74 even after the contact member 3B has moved to the contact position. As a result, the contact member 3A is transferred from the multiple lifting pins 74 to the multiple chuck members 71A.

[0185] As shown in Figure 20(b), before raising the contact member 3A from the contact position, the control device 101 (control unit 102) controls the pin lifting unit 75 to raise the lifting pin 74. Then, as soon as the upper end of the lifting pin 74 comes into contact with the support base 411, the control device 101 (control unit 102) stops the second suction mechanism 763. As a result, the suction of the contact member 3A is released.

[0186] As shown in Figures 20(b) and 20(c), when the suction of the contact member 3A is released, the control device 101 (control unit 102) controls the pin lifting unit 75 to raise the multiple lifting pins 74. The control device 101 (control unit 102) also controls the contact member moving unit 5 to move the contact member 3A from the contact position to the second retracted position. At this time, the control device 101 (control unit 102) controls the contact member moving mechanism 53 (see Figure 2) and the pin lifting unit 75 so that the movement speeds of the contact member 3A and the lifting pins 74 are equal.

[0187] As shown in Figures 20(b) and 20(c), the control device 101 (control unit 102) continues to eject gas from the discharge port of the gas inlet passage 41a while the contact member 3A moves from the contact position to the second retracted position.

[0188] As shown in Figure 20(c), after the contact member 3A moves to the second retracted position, the control device 101 (control unit 102) controls the fourth gas supply unit 47 to stop the ejection of gas from the discharge port of the gas inlet passage 41a. Then, the control device 101 (control unit 102) drives the first suction mechanism 483 to cause the supported part 33 to be attracted to the support part 41. After the contact member 3A moves to the second retracted position, the control device 101 (control unit 102) controls the pin lifting unit 75 to lower the multiple lifting pins 74. As a result, the contact member 3A is transferred from the multiple lifting pins 74 to the contact member holding unit 4.

[0189] Embodiment 7 of the present invention has been described above with reference to Figures 18 to 19. According to this embodiment, the amount of chemical solution (processing liquid) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing liquid) when the contact member 3 comes into contact with the chemical solution (processing liquid) on the substrate W can be reduced.

[0190] [Embodiment 8] Next, Embodiment 8 of the present invention will be described with reference to Figure 21. However, only the differences from Embodiments 1 to 7 will be described, and the same matters as in Embodiments 1 to 7 will be omitted. Embodiment 8 differs from Embodiments 1 to 7 in the configuration of the substrate processing unit 2.

[0191] Figure 21(a) is a schematic diagram showing a part of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. Figure 21(b) is a bottom view of the contact member 3C. As shown in Figure 21(a), the substrate processing unit 2 includes the contact member 3C, the contact member holding unit 4A, the contact member moving unit 5, the substrate holding unit 7A, the substrate rotating unit 8, and the cup unit 11. The substrate processing apparatus 100 of this embodiment also includes a rinse liquid supply unit 45 and a third gas supply unit 46. Furthermore, as shown in Figure 21(b), the substrate processing apparatus 100 of this embodiment also includes a third nozzle 44A.

[0192] Although not shown in the figures, the substrate processing unit 2 further includes a processing chamber 2a, a first nozzle 6, a chemical nozzle moving unit 62, and a cup lifting unit 111, similar to the substrate processing unit 2 described with reference to Figure 2. The substrate processing device 100 further includes a chemical supply unit 61. Furthermore, the substrate processing device 100 of this embodiment does not include the second nozzle 9 and rinse liquid supply unit 91 described with reference to Figure 2. The substrate processing device 100 of this embodiment, similar to Embodiment 4, includes a third nozzle 44A and a rinse liquid supply unit 45 instead of the second nozzle 9 and rinse liquid supply unit 91.

[0193] In this embodiment, the substrate processing apparatus 100 includes a plurality of elastic members 12 as a pressure relief mechanism AK. The plurality of elastic members 12 are arranged between the contact member 3C and the contact member holding portion 4A to relieve the pressure applied to the chemical solution when the contact member 3 comes into contact with the chemical solution on the substrate W. The elastic members 12 include, for example, tension springs or air springs.

[0194] The contact member 3C contacts the chemical solution on the substrate W and covers the chemical solution on the substrate W. In this embodiment, the contact member 3C is disc-shaped. The diameter of the contact member 3C is approximately the same as the diameter of the substrate W. The lower surface of the contact member 3C is a liquid contact surface 31a, similar to the contact portion 31 described with reference to Figure 2.

[0195] In this embodiment, the third nozzle 44A penetrates the contact member 3C, the contact member holding portion 4A, and the support arm 51. The bottom surface of the third nozzle 44A is provided with a processing liquid discharge port 44c and a gas discharge port 44d.

[0196] The processing liquid channel 44a extends to the tip of the third nozzle 44 and communicates with the processing liquid discharge port 44c. The rinsing liquid that flows into the processing liquid channel 44a from the rinsing liquid supply unit 45 is discharged from the processing liquid discharge port 44c (the tip of the third nozzle 44).

[0197] Similarly, the gas flow path 44b extends to the tip of the third nozzle 44 and communicates with the gas discharge port 44d. The gas that flows into the gas flow path 44b from the third gas supply unit 46 is discharged from the gas discharge port 44d (the tip of the third nozzle 44).

[0198] Next, with reference to Figure 21, the substrate processing apparatus 100 of this embodiment will be further described. As shown in Figure 21, in this embodiment, the contact member moving section 5 includes a support arm 51, a second base 52, and a contact member moving mechanism 53a.

[0199] The contact member moving mechanism 53a has a lifting mechanism for raising and lowering the support arm 51, as well as a rotation mechanism for rotating the contact member 3C. For example, the contact member moving mechanism 53a may rotate the contact member 3C by rotating the contact member holding part 4A. The control device 101 (control unit 102) rotates the substrate W and the contact member 3C when the contact member 3C is in contact with the chemical solution. The rotation mechanism of the contact member moving mechanism 53a includes, for example, an electric motor and a ball screw mechanism.

[0200] Specifically, the contact member movement mechanism 53a rotates the contact member 3C about a third rotation axis AX3 that extends vertically. The third rotation axis AX3 is an axis that passes through the center of the contact member 3C. The center of the contact member 3C is opposite the center of the substrate W.

[0201] Embodiment 8 of the present invention has been described above with reference to Figure 21. According to this embodiment, the amount of chemical solution (processing solution) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing solution) when the contact member 3C contacts the chemical solution (processing solution) on the substrate W can be reduced. Furthermore, since the substrate W and the contact member 3C can be rotated while the contact member 3C is in contact with the chemical solution, a liquid flow of the chemical solution can be efficiently generated on the substrate W. Therefore, the chemical solution can spread more easily to the edge of the substrate W.

[0202] [Embodiment 9] Next, Embodiment 9 of the present invention will be described with reference to Figures 22 to 24. However, only the differences from Embodiments 1 to 8 will be described, and the same matters as in Embodiments 1 to 8 will be omitted. Embodiment 9 differs from Embodiments 1 to 8 in the configuration of the substrate processing unit 2.

[0203] Figure 22 is a schematic diagram showing a part of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 22, the substrate processing unit 2 includes a contact member 3D, a contact member holding unit 4B, a contact member moving unit 5, a substrate holding unit 7A, a substrate rotating unit 8, and a cup unit 11. The substrate processing apparatus 100 also includes a suction unit 13.

[0204] Although not shown in the figures, the substrate processing unit 2, similar to the substrate processing unit 2 described with reference to Figure 2, includes a processing chamber 2a, a first nozzle 6, a chemical solution nozzle moving unit 62, a second nozzle 9, and a cup lifting unit 111. The substrate processing apparatus 100 further includes a chemical solution supply unit 61 and a rinse solution supply unit 91.

[0205] In this embodiment, the contact member 3D is disc-shaped. The diameter of the contact member 3D is approximately the same as the diameter of the substrate W. The lower surface of the contact member 3D is a liquid contact surface 31a, similar to the contact portion 31 described with reference to Figure 2.

[0206] The contact member holder 4B has a suction channel 41c. The suction port of the suction channel 41c opens on the lower surface of the contact member holder 4B. The support arm 51 has a suction channel 51a. The suction channel 51a communicates with the suction channel 41c.

[0207] The suction unit 13 draws gas from the suction port of the suction channel 41c. In this embodiment, the suction unit 13 draws gas from the suction channel 51a. As a result, gas is drawn in through the suction channels 51a and 41c, and then through the suction port of the suction channel 41c.

[0208] The suction unit 13 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) drives the suction unit 13 when the contact member holding unit 4B holds the contact member 3D. As a result, the contact member 3D is attracted to the lower surface of the contact member holding unit 4B by the suction force from the suction port.

[0209] Specifically, the suction unit 13 includes a suction pipe 131, a tenth on-off valve 132, and a suction mechanism 133. The processing chamber 2a, described with reference to Figure 2, houses a portion of the suction pipe 131. The tenth on-off valve 132 and the suction mechanism 133 may be housed in the fluid box 10B, described with reference to Figure 1. The suction pipe 131 communicates with the suction flow path 51a. The configuration of the suction unit 13 is the same as that of the suction unit 48, described with reference to Figure 15(a), so its description is omitted.

[0210] The pressure relief mechanism AK is composed of a contact member moving part 5 and a control device 101, similar to the first embodiment.

[0211] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 22 to 24. Figures 23 and 24 schematically show the operation of the substrate processing apparatus 2 after the chemical solution is discharged from the first nozzle 6 onto the upper surface of the substrate W.

[0212] As shown in Figure 23(a), when the contact member 3D is in the second retracted position, the control device 101 (control unit 102) controls the suction unit 13 to cause the contact member 3D to be attracted to the contact member holding unit 4B.

[0213] As shown in Figure 23(b), the control device 101 (control unit 102) controls the contact member moving unit 5 to move the contact member 3D from the second retracted position to the contact position. When the contact member 3D moves to the contact position, the control device 101 (control unit 102) controls the suction unit 13 to release the suction of the contact member 3D. Specifically, the control device 101 (control unit 102) stops the suction mechanism 133.

[0214] As shown in Figure 23(c), the control device 101 (control unit 102) releases the suction of the contact member 3D and then controls the contact member moving unit 5 to raise the contact member holding unit 4B. Thus, in this embodiment, when processing the substrate W using the contact member 3D, the contact member holding unit 4B does not hold the contact member 3D. In this embodiment, when processing the substrate W using the contact member 3D, the contact member 3D is in a state of floating on the liquid film LM1 of the chemical solution.

[0215] As shown in Figure 24(a), after a certain amount of time has elapsed since the contact member 3D was moved to the contact position, the control device 101 (control unit 102) controls the contact member moving unit 5 to lower the contact member holding unit 4B. Specifically, the control device 101 (control unit 102) moves the contact member holding unit 4B to a position where its lower surface contacts the upper surface of the contact member 3D.

[0216] As shown in Figure 24(b), when the contact member holding portion 4B comes into contact with the contact member 3D, the control device 101 (control unit 102) controls the suction portion 13 to cause the contact member 3D to be attracted to the contact member holding portion 4B.

[0217] As shown in Figure 24(c), after the contact member 3D is attracted to the contact member holding part 4B, the control device 101 (control unit 102) controls the contact member moving part 5 to move the contact member 3D to the second retracted position.

[0218] Embodiment 9 of the present invention has been described above with reference to Figures 22 to 24. According to this embodiment, the amount of chemical solution (processing liquid) consumed can be reduced. In addition, the pressure applied to the chemical solution (processing liquid) when the contact member 3D comes into contact with the chemical solution (processing liquid) on the substrate W can be reduced.

[0219] Furthermore, while the substrate W is being processed by bringing the contact member 3D into contact with the chemical solution, the control device 101 (control unit 102) may or may not rotate the substrate W. If the substrate W is rotated, the control device 101 (control unit 102) rotates the substrate W at a rotational speed that holds the contact member 3D on the substrate W. For example, the control device 101 (control unit 102) controls the substrate rotation unit 8 so that the rotational speed of the substrate W is 200 rpm.

[0220] The contact member 3D may be brought into the processing chamber 2a by the central robot CR and used therein. For example, the contact member 3D may be brought into the substrate processing apparatus 100 from outside by the indexer robot IR, or it may be held inside the substrate processing apparatus 100.

[0221] [Embodiment 10] Next, Embodiment 10 of the present invention will be described with reference to Figures 25 to 27. However, only the differences from Embodiments 1 to 9 will be described, and the same matters as in Embodiments 1 to 9 will be omitted. Embodiment 10 differs from Embodiments 1 to 9 in the configuration of the substrate processing unit 2.

[0222] Figure 25 is a schematic cross-sectional view showing the configuration of the substrate processing unit 2 included in the substrate processing apparatus 100 of this embodiment. As shown in Figure 25, the substrate processing unit 2 includes a processing chamber 2a, a contact member 3D, a contact member holding unit 4C, a contact member moving unit 5, a first nozzle 6, a chemical nozzle moving unit 62, a substrate holding unit 7A, a substrate rotating unit 8, a second nozzle 9A, a rinse nozzle moving unit 14, a drying nozzle 15, a drying nozzle moving unit 16, a cup unit 11, and a cup lifting unit 111. The substrate processing apparatus 100 further includes a suction unit 13, a gas supply unit 17, a chemical supply unit 61, and a rinse liquid supply unit 91A.

[0223] The processing chamber 2a houses the contact member 3D, the contact member holding part 4C, the contact member moving part 5, the first nozzle 6, the chemical nozzle moving part 62, the substrate holding part 7A, the substrate rotating part 8, the second nozzle 9A, the rinse nozzle moving part 14, the drying nozzle 15, the drying nozzle moving part 16, the cup part 11, the cup lifting part 111, part of the suction part 13, part of the gas supply part 17, part of the chemical supply part 61, and part of the rinse liquid supply part 91A.

[0224] The rinse liquid supply unit 91A is controlled by the control device 101 (control unit 102) to supply rinse liquid to the second nozzle 9A. Specifically, the rinse liquid supply unit 91A includes rinse liquid piping 911A and a second on / off valve 912A. The configuration of the rinse liquid supply unit 91A is the same as that of the rinse liquid supply unit 91, so its explanation is omitted.

[0225] The second nozzle 9A discharges rinse liquid horizontally. The rinse nozzle moving unit 14 raises and lowers the second nozzle 9A. Specifically, the rinse nozzle moving unit 14 moves the second nozzle 9A between a second processing position and a fourth retracted position. The second processing position is a position inside the cup portion 11. The fourth retracted position is a position above the second processing position. Specifically, the fourth retracted position is a position outside the cup portion 11.

[0226] The rinse nozzle moving section 14 includes a rinse arm 141, a third base 142, and a rinse nozzle moving mechanism 143. The rinse nozzle moving mechanism 143 is controlled by a control device 101 (control unit 102). The configuration of the rinse nozzle moving section 14 is the same as that of the contact member moving section 5, so a detailed explanation is omitted.

[0227] The gas supply unit 17 is controlled by the control device 101 (control unit 102) to supply gas to the drying nozzle 15. Specifically, the gas supply unit 17 includes a gas supply pipe 171 and an 11th on-off valve 172. The processing chamber 2a, described with reference to Figure 2, houses a portion of the gas supply pipe 171. The 11th on-off valve 172 may be housed in the fluid box 10B, described with reference to Figure 1. The gas supply pipe 171 circulates the gas to the drying nozzle 15. The configuration of the gas supply unit 17 is the same as that of the first gas supply unit 42, described with reference to Figure 9(a), so a detailed explanation is omitted.

[0228] The drying nozzle 15 has a first discharge port 151 and a second discharge port 152. The first discharge port 151 discharges gas upward. The second discharge port 152 discharges gas downward.

[0229] The drying nozzle moving unit 16 moves the drying nozzle 15 between the fifth retracted position and the third processing position. The drying nozzle moving unit 16 is controlled by the control device 101 (control unit 102). The fifth retracted position is a position outside the substrate holding unit 7A in a plan view. In this embodiment, the fifth retracted position is a position outside the cup portion 11 in a plan view. The third processing position is a position between the contact member 3D and the substrate W held by the substrate holding unit 7A. When the drying nozzle 15 moves to the third processing position, the first discharge port 151 faces the liquid contact surface 31a of the contact member 3D, and the second discharge port 152 faces the upper surface of the substrate W.

[0230] More specifically, the drying nozzle moving unit 16 moves the drying nozzle 15 in the vertical and horizontal directions. Specifically, the drying nozzle moving unit 16 has an arm 161, a fourth base 162, and a drying nozzle moving mechanism 163. The configuration of the drying nozzle moving unit 16 is the same as that of the chemical solution nozzle moving unit 62, so its explanation will be omitted.

[0231] Next, the contact member holding portion 4C will be described with reference to Figure 26. Figure 26 is a cross-sectional view showing the configuration of the contact member holding portion 4C. As shown in Figure 26, the contact member holding portion 4C has a suction holding portion 491, a rotating shaft portion 492, a rotating drive portion 493, and a suction channel 492a.

[0232] The rotating shaft portion 492 extends vertically. The lower end of the rotating shaft portion 492 is connected to the adsorption holding portion 491. The lower surface of the adsorption holding portion 491 constitutes the adsorption surface 491a. The suction channel 492a extends vertically. The suction channel 492a is formed from the rotating shaft portion 492 to the adsorption holding portion 491. The lower end of the suction channel 492a opens at the adsorption surface 491a. The lower end of the suction channel 492a constitutes the adsorption port.

[0233] The suction pipe 131 is connected to the suction channel 492a. When the suction mechanism 133 is driven, gas is drawn in from the adsorption port of the adsorption surface 491a. When the suction mechanism 133 is driven while the contact member 3D is in contact with the adsorption surface 491a, the contact member 3D is adsorbed onto the adsorption surface 491a.

[0234] The rotary drive unit 493 rotates the rotation shaft unit 492 about a fourth rotation axis AX4 that extends vertically. As a result, the suction holding unit 491 rotates. The rotary drive unit 493 includes, for example, an electric motor. The operation of the rotary drive unit 493 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) drives the rotary drive unit 493 when the contact member 3D is held by the contact member holding unit 4C. As a result, the contact member 3D rotates about the fourth rotation axis AX4. The fourth rotation axis AX4 coincides with the first rotation axis AX1.

[0235] The pressure relief mechanism AK is composed of a contact member moving part 5 and a control device 101, similar to the first embodiment.

[0236] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 25 to 27. Figure 27(a) is a schematic diagram showing the substrate processing apparatus 2 after the contact member 3D has come into contact with the chemical solution discharged onto the upper surface of the substrate W. In other words, Figure 27(a) shows the substrate processing apparatus 2 when processing the substrate W using the contact member 3D. Figure 27(b) is a schematic diagram showing the substrate processing apparatus 2 during the rinsing process (step S26 in Figure 3(b)). Figure 27(c) is a schematic diagram showing the substrate processing apparatus 2 during the drying process (step S3 in Figure 3(a)).

[0237] As shown in Figure 27(a), when processing the substrate W using the contact member 3D, the control device 101 (control unit 102) controls the substrate rotation unit 8 to rotate the substrate W and controls the rotation drive unit 493 to rotate the contact member 3D that is in contact with the liquid film LM4 of the chemical solution on the substrate W.

[0238] As shown in Figure 27(b), the control device 101 (control unit 102) controls the rinse nozzle moving unit 14 during the rinsing process to move the second nozzle 9A to the second processing position. Specifically, the second nozzle 9A moves to the side of the liquid film LM4 of the chemical solution sandwiched between the contact member 3D and the substrate W.

[0239] When the second nozzle 9A moves to the second processing position, the control device 101 (control unit 102) controls the rinse liquid supply unit 91A to discharge rinse liquid from the second nozzle 9A. As a result, the liquid film LM4 of the chemical solution is replaced by the liquid film LM5 of the rinse liquid. In addition, during the rinsing process, the control device 101 (control unit 102) controls the substrate rotation unit 8 to rotate the substrate W and controls the rotation drive unit 493 to rotate the contact member 3D.

[0240] As shown in Figure 27(c), during the drying process, the control device 101 (control unit 102) controls the contact member moving unit 5 to move the contact member 3D upward. Then, the control device 101 (control unit 102) controls the drying nozzle moving unit 16 to move the drying nozzle 15 into the gap between the contact member 3D and the substrate W. The control device 101 (control unit 102) then controls the gas supply unit 17 to discharge gas from the first discharge port 151 and the second discharge port 152 of the drying nozzle 15. In addition, during the drying process, the control device 101 (control unit 102) controls the substrate rotating unit 8 to rotate the substrate W at high speed, and controls the rotation drive unit 493 to rotate the contact member 3D at high speed.

[0241] Embodiment 10 of the present invention has been described above with reference to Figures 25 to 27. According to this embodiment, the amount of chemical solution (processing liquid) consumed can be reduced. In addition, the pressure applied to the chemical solution when the contact member 3D comes into contact with the chemical solution on the substrate W can be reduced.

[0242] In this embodiment, the contact member 3D was rotated when processing the substrate W using the contact member 3D, but it is not necessary to rotate the contact member 3D when processing the substrate W using the contact member 3D. Also, in this embodiment, the substrate processing is performed with the contact member 3D held by the contact member holding part 4C, but the contact member holding part 4C does not need to hold the contact member 3D during substrate processing. Specifically, the contact member holding part 4C may move away from the contact member 3D and retract upward during substrate processing.

[0243] Embodiments of the present invention have been described above with reference to the drawings (Figures 1 to 27). However, the present invention is not limited to the embodiments described above, and can be implemented in various forms without departing from its spirit. Furthermore, the multiple components disclosed in the above embodiments can be modified as appropriate. For example, some components from all the components shown in one embodiment may be added to the components of another embodiment, or some components from all the components shown in one embodiment may be deleted from the embodiment.

[0244] The drawings schematically show each component in order to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown may differ from the actual dimensions due to the convenience of drawing creation. Furthermore, the configuration of each component shown in the above embodiments is merely an example and is not particularly limiting, and it goes without saying that various modifications are possible without substantially departing from the effects of the present invention.

[0245] For example, in the embodiment described with reference to Figures 1 to 27, the substrate holding parts 7, 7A, and 7B were clamping-type chucks that brought a plurality of chuck members 71, 71A into contact with the peripheral edge surface of the substrate W. However, the method of holding the substrate W is not particularly limited as long as the substrate W can be held horizontally. For example, the substrate holding parts 7, 7A, and 7B may be vacuum-type chucks or Bernoulli-type chucks.

[0246] Furthermore, in the embodiment described with reference to Figures 1 to 27, the substrate W was rotated while the contact members 3, 3A to 3D were in contact during substrate processing. However, it is not necessary to rotate the substrate W while the contact members 3, 3A to 3D are in contact during substrate processing. Specifically, the contact members 3, 3A to 3D may be kept in contact with the processing liquid on the substrate W for a certain period of time. [Industrial applicability]

[0247] The present invention is useful for apparatus and method for processing substrates. [Explanation of Symbols]

[0248] 2: PCB Processing Unit 3, 3A~3D: Contact member 4, 4A~4C: Contact member holding part 5: Contact member moving part 7, 7A, 7B: Board holding part 8: Circuit board rotating part 12: Elastic member 42: Gas supply unit 43: Gas supply unit 46: Third Gas Supply Unit 47: Fourth Gas Supply Unit 53, 53a: Contact member moving mechanism 73, 73A: Engaging pins 74: Elevating pin 75: Pin lifting mechanism 100: Substrate processing equipment 101: Control device 102: Control Unit 103: Storage section AK: Pressure relief mechanism W: Circuit board

Claims

1. A substrate processing apparatus for processing substrates, A substrate holding portion for holding the substrate, A processing liquid dispensing unit that dispenses processing liquid onto the upper surface of the substrate held by the substrate holding unit, thereby supplying the processing liquid to the substrate, A contact member holding portion that holds a contact member that contacts the processing liquid on the substrate and covers the processing liquid, A contact member moving part moves the contact member holding part to bring the contact member into contact with the processing liquid on the substrate, A pressure relief mechanism that relieves the pressure applied to the processing liquid when the contact member comes into contact with the processing liquid, Equipped with, The contact member includes a supported portion that is supported by the contact member holding portion, The contact member holding portion includes a support portion that supports the supported portion, The pressure relief mechanism is a substrate processing apparatus that supplies gas between the supported portion and the support portion.

2. A substrate processing apparatus for processing a substrate, A substrate holding portion for holding the substrate, A processing liquid dispensing unit that dispenses processing liquid onto the upper surface of the substrate held by the substrate holding unit, thereby supplying the processing liquid to the substrate, A contact member holding portion that holds a contact member that contacts the processing liquid on the substrate and covers the processing liquid, A contact member moving part moves the contact member holding part to bring the contact member into contact with the processing liquid on the substrate, A pressure relief mechanism that relieves the pressure applied to the processing liquid when the contact member comes into contact with the processing liquid, Equipped with, The aforementioned pressure relief mechanism is A lifting support member that supports the contact member from below, A lifting section for raising and lowering the aforementioned lifting support member, Control unit that controls the contact member moving part and the lifting part. Includes, The control unit is a substrate processing apparatus that maintains a state in which the lifting support member is in contact with the contact member from below, while moving the contact member toward the processing liquid on the substrate to bring it into contact with the processing liquid.

3. A substrate processing apparatus for processing a substrate, A substrate holding portion for holding the substrate, A processing liquid dispensing unit that dispenses processing liquid onto the upper surface of the substrate held by the substrate holding unit, thereby supplying the processing liquid to the substrate, A contact member holding portion that holds a contact member that contacts the processing liquid on the substrate and covers the processing liquid, A contact member moving part moves the contact member holding part to bring the contact member into contact with the processing liquid on the substrate, A pressure relief mechanism that relieves the pressure applied to the processing liquid when the contact member comes into contact with the processing liquid, Equipped with, The aforementioned contact member holding portion enters a non-holding state after the contact member has come into contact with the processing liquid, wherein the contact member is not held in place, in a substrate processing apparatus.

4. A substrate processing apparatus for processing a substrate, A substrate holding portion for holding the substrate, A processing liquid dispensing unit that dispenses processing liquid onto the upper surface of the substrate held by the substrate holding unit, thereby supplying the processing liquid to the substrate, A contact member holding portion that holds a contact member that contacts the processing liquid on the substrate and covers the processing liquid, A contact member moving part moves the contact member holding part to bring the contact member into contact with the processing liquid on the substrate, A pressure relief mechanism that relieves the pressure applied to the processing liquid when the contact member comes into contact with the processing liquid, Equipped with, The substrate holding portion includes an engaging portion that engages with the contact member, wherein the substrate holding portion is a substrate processing apparatus.

5. The system further comprises a control unit that controls the processing liquid discharge unit and the contact member movement unit, The substrate processing apparatus according to any one of claims 1, 3, and 4, wherein the control unit brings the contact member into contact with the processing liquid after discharging the processing liquid from the processing liquid discharge unit.

6. The substrate processing apparatus according to claim 1 or claim 2, wherein the processing liquid discharge unit discharges a fixed amount of the processing liquid.

7. The substrate processing apparatus according to any one of claims 1 to 4, further comprising the contact member.

8. The pressure relief mechanism is provided in the contact member holding portion, The substrate processing apparatus according to any one of claims 1 to 4, wherein the pressure relief mechanism supports the contact member so that it can move up and down.

9. The substrate processing apparatus according to any one of claims 1, 3, and 4, further comprising a regulating member for regulating the lower limit position of the contact member.

10. The substrate processing apparatus according to any one of claims 1, 3, and 4, wherein the pressure relief mechanism includes an elastic member.

11. The pressure relief mechanism includes the contact member moving part and the control unit that controls the contact member moving part. The substrate processing apparatus according to any one of claims 1 to 4, wherein the control unit moves the contact member such that the pressure applied to the processing liquid is relieved when the contact member comes into contact with the processing liquid.

12. The substrate processing apparatus according to claim 1 or claim 4, wherein the contact member holding portion holds the contact member even after the contact member has come into contact with the processing liquid.

13. A substrate rotating unit rotates the substrate holding unit to rotate the substrate held by the substrate holding unit, A control unit that controls the rotating part of the substrate and Furthermore, The substrate processing apparatus according to any one of claims 1, 3, and 4, wherein the control unit rotates the substrate while the contact member is in contact with the processing liquid.

14. A substrate rotating unit rotates the substrate holding unit to rotate the substrate held by the substrate holding unit, A control unit that controls the rotating part of the substrate and Furthermore, The substrate processing apparatus according to any one of claims 1, 3, and 4, wherein the control unit stops the rotation of the substrate while the contact member is in contact with the processing liquid.

15. The substrate processing apparatus according to any one of claims 1 to 4, wherein the contact member includes a hydrophobic material or a superhydrophobic material.

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