Tunable uniformity control using a rotating magnetic housing

Abstract

To provide a magnetic housing system, an electromagnetic housing system, and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film.SOLUTION: In one embodiment, a method includes rotation of a rotational magnetic housing about a center axis of a process volume to create dynamic magnetic fields. The magnetic fields modify the shape of a plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.SELECTED DRAWING: Figure 1A

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to a rotating magnetic housing system for controlling properties of generated plasma, and methods using the same.

Background Art

[0002] Cross-reference to Related Art Plasma Enhanced Chemical Vapor Deposition (PECVD) is generally employed to deposit a film on a substrate such as a semiconductor wafer. Plasma etching is generally employed to etch a film deposited on a substrate. PECVD and plasma etching are achieved by introducing one or more gases into a processing space of a processing chamber that accommodates a substrate. The one or more gases are mixed in a diffuser located near the top surface of the chamber and introduced into the processing space through a plurality of holes or nozzles of the diffuser. During PECVD and plasma etching, the mixture of one or more gases in the processing space is energized (e.g., excited) to generate plasma by applying radio frequency (RF) energy from one or more RF sources coupled to the chamber into the chamber. An electric field that ionizes atoms of the mixture of one or more gases in the processing space and causes emission of electrons is generated in the processing space. In PECVD, ionized atoms accelerated toward the substrate support promote deposition of a film on the substrate. In plasma etching, ionized atoms accelerated toward the substrate support promote etching of the film deposited on the substrate.

[0003] Plasma generated in the processing space has properties such as a density profile. A non-uniform density profile may result in non-uniform deposition or etching of the film on the substrate. Specifically, the density profile of the plasma affects the deposition thickness and etching profile of the film across the substrate surface. Therefore, what is needed in the art is a method for controlling properties of plasma generated in the processing space of a processing chamber. [Overview of the project]

[0004] In one embodiment, a method is provided. This method includes placing a substrate in the chamber body of a processing system. The processing system comprises a substrate support and a rotating magnetic housing located within the chamber body. The substrate is placed on the substrate support on which electrodes are located. The rotating magnetic housing is located outside the chamber and defines a circular central opening. Multiple magnets are arranged in the rotating magnetic housing. RF power is supplied to the electrodes to generate plasma within the chamber body. The rotating magnetic housing rotates around the circular central opening such that each of the magnets moves along a circular path around the chamber body.

[0005] In another embodiment, a method is provided. This method includes placing a substrate in the chamber body of a processing system. The processing system comprises a substrate support disposed within the chamber body, electrodes disposed inside the substrate support, and a rotating magnetic housing. The substrate is placed on the substrate support. The rotating magnetic housing is located outside the chamber and defines a circular central opening. Multiple magnets are arranged in the rotating magnetic housing. Each magnet is spaced a certain vertical distance from the substrate. The vertical distance corresponds to the distance from the substrate to a plane formed through the center of each magnet. RF power is applied to the electrodes to generate plasma in the chamber body. The rotating magnetic housing rotates around the circular central opening so that each magnet moves along a circular path around the chamber body. The vertical distance of the magnets from the substrate is changed by raising or lowering at least one of the rotating magnetic housing or the substrate support.

[0006] In another embodiment, a method is provided. This method includes placing a substrate in the chamber body of a processing system. The processing system comprises a substrate support disposed within the chamber body, electrodes disposed within the substrate support, and a rotating magnetic housing. The substrate is placed on the substrate support. The rotating magnetic housing is located outside the chamber and defines a circular central opening. Multiple magnets are arranged in the rotating magnetic housing. Each of the multiple magnets is removably held in a corresponding retaining bracket of the rotating magnetic housing, with a certain pitch between each of the multiple magnets. Each of the magnets is at a certain vertical distance from the substrate. This vertical distance corresponds to the distance from the substrate to a plane formed through the center of each of the magnets. Each of the magnets is at a certain horizontal distance from the central axis of the chamber body. RF power is applied to the electrodes to generate plasma in the chamber body. The rotating magnetic housing rotates around the circular central opening so that each of the magnets moves along a circular path around the chamber body. At least one of the rotation speed, pitch, vertical spacing, or horizontal spacing is adjusted.

[0007] To better understand the features listed above, the disclosure, which is briefly summarized above, can be described in more detail by referring to embodiments shown in the accompanying drawings. However, it should be noted that the accompanying drawings only show exemplary embodiments and should not be considered limiting in scope, as other equally valid embodiments may be recognized. [Brief explanation of the drawing]

[0008] [Figure 1A] This is a schematic cross-sectional view of a plasma chemical vapor deposition (PECVD) chamber having a rotating magnetic housing system with a rotating magnetic housing located outside the chamber, according to one embodiment. [Figure 1B] This is a schematic top view of a rotary magnetic housing system according to one embodiment. [Figure 1C]This is a schematic cross-sectional view of a PECVD chamber having an electromagnet housing system with an electromagnet housing located outside the chamber, according to one embodiment. [Figure 1D] This is a schematic top view of an electromagnet housing system according to one embodiment. [Figure 1E] This is a schematic cross-sectional view of a PECVD chamber having an electromagnet system according to one embodiment. [Figure 2] This is a flowchart of a method for controlling the density profile of plasma formed in the processing space of a processing chamber, according to one embodiment. [Figure 3A-B] This graph shows the plasma density profile within the processing space according to the embodiment. [Modes for carrying out the invention]

[0009] For clarity, the same reference numerals are used whenever possible to indicate identical elements common to the figures. It is intended that elements and features of one embodiment can be usefully incorporated into other embodiments without further detail.

[0010] Embodiments described herein provide a magnetic housing system, an electromagnetic housing system, and a method for controlling the properties of plasma generated in the processing space of a processing chamber that affect the deposition of films. In one embodiment, the method includes generating a dynamic magnetic field by rotating a rotary magnetic housing about a central axis of the processing space. This magnetic field modifies the plasma shape, the concentrations of ions and radicals, and the transitions of ion and radical concentrations, thereby controlling the plasma density profile. By controlling the plasma density profile, the uniformity and properties of deposited and etched films are tuned.

[0011] Figures 1A, 1C, and 1E are schematic cross-sectional views of the processing system 100 in various embodiments, including a plasma chemical vapor deposition (PECVD) system. One example of system 100 is the PRODUCER® system manufactured by Applied Materials, Inc., located in Santa Clara, California. The system described below is an exemplary chamber, and it should be understood that other systems, including systems from other manufacturers, may be used together or modified to achieve aspects of this disclosure. System 100 includes a chamber 101a (e.g., a first chamber) and a chamber 101b (e.g., a second chamber). In some embodiments that can be combined with other embodiments described herein, chambers 101a and 101b share resources. For example, chambers 101a and 101b may share at least one or more gas sources 144, mounting plates 112, and pumps 150. Chambers 101a and 101b are similarly configured. However, it is also intended that each of chambers 101a and 101b has its own dedicated resources.

[0012] In the embodiment shown in Figure 1A, each chamber 101a, 101b has a rotary magnetic housing system 102 having a rotary magnetic housing 104 located outside the chambers 101a, 101b. In the embodiment shown in Figure 1C, each chamber 101a, 101b has an electromagnet housing system 170 having an electromagnet housing 172 located outside the chambers 101a, 101b. In the embodiment shown in Figure 1E, each chamber 101a, 101b has an electromagnet system 171 located in a spacer 114 of the chamber lid assembly 108. Although the embodiment of chamber 101a is described, please understand that chamber 101b is equipped in the same way. In Figures 1A, 1C, and 1E, reference numerals for chamber 101b may be omitted for clarity.

[0013] Chambers 101a and 101b include a chamber body assembly 106 and a chamber lid assembly 108. The chamber body assembly 106 in the embodiments of Figures 1A and 1C includes a chamber body 110 coupled to a mounting plate 112. The chamber lid assembly 108 in the embodiments of Figures 1A and 1C includes a spacer 114 having a first flange 118 coupled to the mounting plate 112 and a chamber lid 116 coupled to a second flange 120 of the spacer 114. The chamber lid assembly 108 in the embodiment of Figure 1E includes a spacer 114 having a first flange 118 coupled to the chamber body 110 and a chamber lid 116 coupled to a second flange 120 of the spacer 114. The chamber lid 116 includes a gas distribution assembly 122. The gas distribution assembly 122 is positioned opposite a substrate support assembly 124 that defines a processing space 126 between them. The processing space 126 in the embodiments of Figures 1A and 1C is further defined by the chamber lid 116, the inner wall 128 of the spacer 114, the mounting plate 112, and the chamber body 110. The processing space 126 in the embodiment of Figure 1E is further defined by the chamber lid 116, the inner wall 128 of the spacer 114, and the chamber body 110.

[0014] The substrate support assembly 124 is located within the processing space 126. The substrate support assembly 124 includes a substrate support 130 and a stem 132. The substrate support 130 has a support surface 134 that supports the substrate 165. The substrate support 130 typically includes a heating element (not shown). The substrate support 130 is movably positioned in the processing space 126 by a stem 132 that extends through the chamber body 110 to which the stem 132 is connected to the substrate support drive system 136. The substrate support drive system 136 moves the substrate support 130 between a raised processing position (as shown) and a lowered position, facilitating the transfer of substrates into and out of the processing space, through a slit valve 138 formed through the chamber body 110. In one embodiment, which may be combined with other embodiments described herein, the substrate support drive system 136 rotates the stem 132 and the substrate support 130.

[0015] In one embodiment, which may be combined with other embodiments described herein, the gas distribution assembly 122 is configured to uniformly distribute gas into the processing spaces 126 of chambers 101a and 101b to facilitate the deposition of films, such as tip patterning films, on the substrate 165 positioned on the substrate support 130 of the substrate support assembly 124. In another embodiment, which may be combined with other embodiments described herein, the gas distribution assembly 122 is configured to uniformly distribute gas into the processing spaces 126 of chambers 101a and 101b to facilitate the etching of films, such as tip patterning films, deposited on the substrate 165 positioned on the substrate support 130 of the substrate support assembly 124.

[0016] The gas distribution assembly 122 includes a gas inlet passage 140 that delivers gas from a flow controller 142 coupled to one or more gas sources 144 through a diffuser 146 suspended from a hanger plate 148. The diffuser 146 has a number of holes or nozzles (not shown) through which the gas mixture is introduced into the processing space 126 during processing. A pump 150 is coupled to the outlet 152 of the chamber body 110 to control the pressure in the processing space 126 and to discharge byproducts from the processing space 126. The diffuser 146 of the gas distribution assembly 122 can be connected to an RF return (or ground), allowing RF energy applied to the substrate support 130 to generate an electric field in the processing space 126 that is used to generate plasma during processing of the substrate 165.

[0017] The RF source 154 is coupled to an electrode 156 located within the substrate support 130 through a conductive rod 158 positioned through the stem 132. In one embodiment, which may be combined with other embodiments described herein, the electrode 156 is connected to the RF source 154 through a matchbox 163 having a match circuit for adjusting the electrical characteristics of the electrode 156, such as voltage, current, and impedance, and a sensor for measuring those electrical characteristics. The match circuit can facilitate adjustment of voltage, current, or impedance in response to a signal from the sensor. The diffuser 146 of the gas distribution assembly 122 connected to the RF return and the electrode 156 facilitate the formation of capacitive plasma coupling. The RF source 154 delivers RF energy to the substrate support 130, facilitating the generation of capacitively coupled plasma between the substrate support 130 and the diffuser 146 of the gas distribution assembly 122. When RF power is supplied to the electrode 156, an electric field is generated between the diffuser 146 and the substrate support 130 that causes gas atoms in the processing space 126 between the substrate support 130 and the diffuser 146 to ionize and emit electrons. The ionized atoms accelerated to the substrate support 130 promote the deposition or etching of the film on the substrate 165 positioned on the substrate support 130.

[0018] As shown in Figure 3A, the plasma has a density profile 301 in the processing space 126. The density profile 301 is the ion density 302 (ions / a) at position 304 on the horizontal plane 167 within the processing space 126. 3) corresponds to. The density profile 301 includes a peak 303 corresponding to the maximum ion density 305 and a width 307 corresponding to the plasma diameter. In some embodiments that can be combined with other embodiments described herein, one of the rotating magnetic housing system 102, electromagnet housing system 170, and electromagnet system 171 described herein and a method thereof control the plasma density profile 301 to tune the uniformity and properties of the deposited or etched film. An example of a property is the local stress vector of the deposited film. In some embodiments further described herein, control of the plasma density profile 301 tunes the local stress vector to result in a deposited film with a substantially uniform distribution of stress vectors. In the embodiment of Figure 1A, the rotational speed of the magnet, the strength of the magnet (Gauss), and the vertical position of the magnet may be adjusted to facilitate the corresponding adjustment in the plasma density profile. In the embodiment of Figure 1C, the current flow of the electromagnet, the strength of the electromagnet (Gauss), and the vertical position of the electromagnet may be adjusted to facilitate the corresponding adjustment in the plasma density profile. In the embodiment shown in Figure 1E, the current flow in the electromagnet and the strength of the electromagnet can be adjusted to facilitate corresponding adjustments in the plasma density profile. For example, adjustments can be made to one or more of the following: the perpendicular position of the plasma to the substrate, the peak position of the plasma density profile, or the ion density value at a specific position on the substrate.

[0019] As shown in Figure 1A, the controller 164 coupled to the chambers 101a, 101b, and the rotary magnetic housing system 102 is configured to control the aspect ratio of the chambers 101a, 101b, and the rotary magnetic housing system 102 during processing. As shown in Figure 1C, the controller 164 coupled to the chambers 101a, 101b, and the electromagnet housing system 170 is configured to control the aspect ratio of the chambers 101a, 101b, and the electromagnet housing system 170 during processing. As shown in Figure 1E, the controller 164 coupled to the chambers 101a, 101b, and the electromagnet system 171 is configured to control the aspect ratio of the chambers 101a, 101b, and the electromagnet system 171 during processing.

[0020] As shown in FIG. 3A, the strength of one of the magnets 143 and the electromagnet core material (shown in FIGS. 1C and 1E) compresses the plasma density profile 301 within the processing space 126, such that the plasma sheath extends to the sidewall of the chamber body 110. Compressing the plasma density profile 301 leads to a more uniform concentration of ions and radicals across the substrate 165 (at relative heights on the substrate) towards a uniform deposition profile. Further, the compression of the density profile 301 causes the plasma sheath to extend radially outward toward the sidewall of the chamber body 110. Extending the plasma sheath to the sidewall of the chamber body 110 provides a short, symmetrical path for RF energy to propagate from the sidewall to ground. The path for RF energy propagation from the sidewall to ground improves current flow, and the increased efficiency reduces the amount of current required by the electrode 156 of the substrate support 130. The reduction in the amount of current required by the electrode 156 allows more voltage to be delivered to the electrode 156 due to improved efficiency. The increased voltage results in greater ionization of the plasma sheath towards increased bombardment of ions or radicals on the substrate 165. Increased bombardment of ions or radicals on the substrate 165 reduces the stress of the film to be deposited or etched. Further, the compression of the density profile 301 and the expansion of the plasma sheath result in a substantially uniform distribution of stress vectors in the deposited or etched film.

[0021] FIG. 1B shows a schematic top view of a rotating magnetic housing system 102. Referring to FIGS. 1A and 1B, the rotating magnetic housing system 102 includes a rotating magnetic housing 104 configured to rotate about a central axis 103 of the processing space 126 to generate a static or dynamic magnetic field. This magnetic field modifies the shape of the plasma, the concentration of ions and radicals, and changes in the concentration of ions and radicals, and controls the plasma density profile 301 within the processing space 126.

[0022] A rotary magnetic housing system 102 having a rotary magnetic housing 104 is located outside the chambers 101a and 101b. The rotary magnetic housing system 102 comprises an upper plate 105, a lower plate 107 positioned opposite the upper plate 105, an inner side wall 109, an outer side wall 113 positioned opposite the inner side wall 109, a housing lift system 168, and a housing drive system 115. An inner wall 128 defines a circular central opening. In one embodiment, which may be combined with other embodiments described herein, at least one of the upper plate 105, the lower plate 107, or the spacer 114 has one or more channels (not shown) connected to a heat exchanger (not shown) that controls the temperature profile of the rotary magnetic housing 104. The outer wall 162 of the spacer 114 is made of a polymer material such as PTFE (polytetrafluoroethylene). In one embodiment, which may be combined with other embodiments described herein, the outer wall 162 is a thin sheet of polymer material. The polymer material of the outer wall 162 of the spacer 114 allows the rotating magnetic housing 104 to rotate around the spacer 114 with respect to the central axis 103 of the processing space 126.

[0023] The rotary magnetic housing 104 includes a plurality of holding brackets 129. Each holding bracket among the plurality of holding brackets 129 is arranged on the rotary magnetic housing 104 with a spacing d between adjacent holding brackets 129. The plurality of holding brackets 129 enable the plurality of magnets 143 to be both arranged on the rotary magnetic housing 104 and removed from the rotary magnetic housing 104. In one embodiment, each magnet 143 among the plurality of magnets 143 is held by the holding brackets 129 with a pitch p between adjacent magnets 143 among the plurality of magnets 143. The pitch p corresponds to the spacing between respectively adjacent magnets 143 among the plurality of magnets 143. The magnetic field generated by rotating the rotary magnetic housing 104 is tuned by the pitch p. In one embodiment that can be combined with other embodiments described in the present specification, each of the holding brackets 129 is coupled to a track 131. Each of the holding brackets 129 is actuated such that it can slide along the track 131 in a radial direction and is operable to change the horizontal spacing 133 from each of the magnets 143 to the central axis 103 of the processing space 126.

[0024] As shown in Figure 1C, an electromagnet housing system 170 having an electromagnet housing 172 is located outside the chambers 101a and 101b. The electromagnet housing 172 comprises an upper plate 173, a lower plate 174 positioned opposite the upper plate 173, an inner side wall 176, an outer side wall 175 positioned opposite the inner side wall 176, and a housing lift system 168. An inner wall 128 defines a circular central opening. In one embodiment, which may be combined with other embodiments described herein, at least one of the upper plate 173, the lower plate 174, or the spacer 114 has one or more channels (not shown) connected to a heat exchanger (not shown) that controls the temperature profile of the electromagnet housing 172. Conductive wire 178 is positioned in the electromagnet housing 172 and coiled once or more times around the spacer 114 to form a single electromagnet circumscribing the spacer 114. A power supply 180 is coupled to a conductive wire 178 that carries current in a circular path around the processing space 126. In one embodiment, which may be combined with other embodiments described herein, at least one turn of the conductive wire 178 is coupled to a track 181. Each turn of the conductive wire 178 coupled to one of the tracks 181 acts on the track 181 so that it can slide radially along the track 181, thereby changing the horizontal distance 133 from the conductive wire 178 to the central axis 103 of the processing space 126. As shown in Figure 1E, the conductive wire 178 is positioned in a spacer 114 and coiled once or more times around the processing space 126.

[0025] In one embodiment, as shown in Figure 1B, which can be combined with other embodiments described herein, the magnet 143 of the first half 137 (e.g., spanning approximately 180 degrees) of the rotating magnetic housing 104 has its north pole 141 facing the processing space 126, and the magnet 143 of the second half 139 (e.g., spanning approximately 180 degrees) of the rotating magnetic housing 104 has its south pole 145 facing away from the processing space 126. As shown in Figure 3B, the opposite polarity of the magnets 143 of the first half 137 and the second half 139 results in a shift in the peak 303 of the density profile 301. The opposite polarity of the magnets 143 distorts the B field produced by the magnets 143. The distortion of the B field causes a shift in the peak 303 of the density profile 301. The shift in peak 303 corresponds to a shift in the plasma sheath. The rotation of the rotary magnetic housing 104 promotes more uniform exposure of the substrate 165 to ions and radicals in the distorted plasma sheath.

[0026] The rotating magnetic housing 104 is coupled to a housing drive system 115. The housing drive system 115 consists of a belt 147 and a motor 149. The rotating magnetic housing 104 has a plurality of grooves 151 formed in its outer sidewall 113. Each groove 151 corresponds to one of a plurality of protrusions 155 on the belt 161. The belt 161 is configured to be positioned around the rotating magnetic housing 104 and is coupled to a motor 149, such as a brushless DC electric motor. The housing drive system 115 is configured to rotate the rotating magnetic housing 104 around the central axis 103 of the processing space 126 at a certain rotational speed. This rotational speed controls the current in the substrate 165 from the modified magnetic field. In one example, it is intended that each of the chambers 101a and 101b contains a separate housing drive system 115. In another example, it is intended that chambers 101a and 101b each share a housing drive system 115.

[0027] In embodiments of Figures 1C and 1E, which can be combined with other embodiments described herein, the conductive wire 178 has at least one void in its core material, the cross-sectional area of ​​the core material varies, and the spacing between each winding of the conductive wire 178 also varies. The core material of a first half of the conductive wire 178 (e.g., extending approximately 180 degrees) may have more voids than that of a second half of the conductive wire 178 (e.g., extending approximately 180 degrees). The cross-sectional area of ​​the core material of the first half of the conductive wire 178 may be larger than that of the second half of the conductive wire 178. The spacing between each winding of the conductive wire 178 in the first half may be narrower than that of the conductive wire 178 in the second half. Adjustments to at least one of the voids, cross-sectional area, or spacing between each winding of the conductive wire 178 distort the B field produced by the current flowing through the conductive wire 178. The current circular circulation promotes more uniform exposure of the substrate 165 to ions and radicals in the distorted plasma sheath.

[0028] In other embodiments of Figures 1C and 1E, which can be combined with other embodiments described herein, the electromagnet housing 172 (Figure 1C) and the electromagnet system 171 (Figure 1E) include two or more conductive wires 178. Each of the conductive wires 178 of the electromagnet housing 172 is located in the respective portion of the electromagnet housing 172. Each of the conductive wires 178 of the electromagnet system 171 is located in the respective portion of the spacer 114. Power supplies 180 (180a, 180b, 180c, and 180d in Figure 1D) are coupled separately to each of the conductive wires 178. The power supplies 180, which are electrically operable, can be connected to a controller 164. The controller 164 is operable to control the supply of power to each of the conductive wires 178 by switching each of the power supplies 180 on and off sequentially, and also by switching each of the power supplies 180 on and off simultaneously. By switching each of the power supplies 180 off simultaneously, shunting of the magnetic field produced by the electromagnet is made possible. In one example, a first conductive wire is coiled once or more times in a semicircular shape and placed in the first half of the electromagnet housing 172 (Figure 1C) or spacer 114 (Figure 1E), corresponding to the first half of the processing space 126, to form a first electromagnet. A second conductive wire is coiled once or more times in a semicircular shape and placed in the second half of the electromagnet housing 172 (Figure 1C) or spacer 114 (Figure 1E), corresponding to the second half of the processing space 126, to form a second electromagnet. The polarity of the first electromagnet and the polarity of the second electromagnet may be reversed.

[0029] As shown in the schematic top view of the electromagnet housing system 170 in Figure 1D, in one example, a first conductive wire 178a is coiled once or multiple times in a semicircular shape exhibiting an angular arc of 90 degrees or less, and is placed in the first quadrant 179a of the electromagnet housing 172 corresponding to the first quadrant 126a of the processing space 126, forming a first electromagnet. A second conductive wire 178b is coiled once or multiple times in a semicircular shape exhibiting an angular arc of 90 degrees or less, and is placed in the second quadrant 179b of the electromagnet housing 172 corresponding to the second quadrant 126b of the processing space 126, forming a second electromagnet. A third conductive wire 178c is coiled once or multiple times in a semicircular shape exhibiting an angular arc of 90 degrees or less, and is placed in the third quadrant 179c of the electromagnet housing 172 corresponding to the third quadrant 126c of the processing space 126, forming a third electromagnet. The fourth conductive wire 178d is coiled once or multiple times in a semicircular shape exhibiting an angular arc of 90 degrees or less, and is positioned in the fourth quadrant 179d of the electromagnet housing 172 corresponding to the fourth quadrant 126d of the processing space 126, forming the fourth electromagnet. The polarities of the first, second, third, and fourth electromagnets may alternate.

[0030] The housing drive system 115 and the rotary magnetic housing 104 are coupled to the housing lift system 168. Connecting the housing drive system 115 and the rotary magnetic housing 104 facilitates vertical adjustment of the rotary magnetic housing 104 relative to the substrate 165. Coupling the electromagnet housing 172 to the housing lift system 168 facilitates vertical adjustment of the electromagnet housing 172 relative to the substrate 165. For example, the properties of the plasma maintained in the corresponding chambers 101a or 101b can be adjusted by widening or narrowing the vertical gap 135 defined from the plane formed through the centers of each magnet 143 to the substrate 165. For example, the properties of the plasma maintained in the corresponding chambers 101a or 101b can be adjusted by widening or narrowing the vertical gap 182 defined by the plane formed through the center of the conductive wire 178. The housing lift system 168 is capable of simultaneously raising and lowering the rotary magnetic housing 104 and the housing drive system 115, but separate operation is also intended. By raising and lowering the substrate 165 by vertical distances of 135 and 182, the distance from the plasma sheath to the substrate 165 is adjusted, thereby controlling the ion and radical concentration transitions to control the uniformity and properties such as stress of the deposited or etched film. To facilitate vertical operation, the housing lift system 168 may include one or more actuators, such as an electric motor, a stepper motor, or a screwdriver with a threaded rod, to facilitate vertical operation relative to the mounting plate 112. In one embodiment, which may be combined with other embodiments described herein, a motor 149 is coupled to the housing lift system 168 by a mount 157.

[0031] In one embodiment, which may be combined with other embodiments described herein, the thickness of the outer side walls 113, 117 is 159. The material and thickness 159 of the outer side walls 113, 175 control the permeability of the outer side walls 113, 175, thereby confining the magnetic field to the processing space 126. As shown in Figure 1E, the material and thickness of the shield 184, which is aligned with the conductive wire 178 and coupled to the outer wall 162 of the spacer 114, also contribute to the confinement of the magnetic field to the processing space 126. The confinement of the magnetic field to the processing space 126 reduces the influence of the magnetic field on processing spaces near adjacent processing chambers, thereby improving processing uniformity. In one embodiment, which may be combined with other embodiments described herein, as shown in Figures 1A and 1C, the chambers 101a and 101b include an actuated shield 186 that is movable to be raised and lowered, such that the opening 190 of the body 188 of the actuated shield 186 is aligned with one of the conductive wires 178 and the magnet 143. In another embodiment, which may be combined with other embodiments described herein, as shown in Figure 1E, the chambers 101a and 101b include a shield 192, such that the opening 196 of the body 194 of the shield 192 is aligned with the conductive wire. The material and thickness of the actuated shield 186 and shield 192 result in the confinement of the magnetic field into the processing space 126.

[0032] Figure 2 is a flowchart of method 200 for controlling the density profile 301 of the plasma formed in the processing space 126 of the processing chamber. For convenience of explanation, Figure 2 will be explained in relation to Figures 1A to 1E. However, it should be noted that processing systems other than system 100 may be used in conjunction with method 200, and that magnetic housing assemblies other than the rotary magnetic housing system 102 may be used in conjunction with method 200.

[0033] In operation 201, the substrate 165 is placed on the support surface 134 of the substrate support 130. In one embodiment, the substrate is fed into chambers 101a and 101b through a slit valve 138 formed through the chamber body 110 and placed on the substrate support 130. Next, the substrate support 130 is raised to a raised processing position in the processing space 126 by the substrate support driving system 136.

[0034] In operation 202, one or more gases are supplied at a certain flow rate to the processing spaces 126 of chambers 101a and 101b. In one embodiment, which may be combined with other embodiments described herein, a flow controller 142 delivers one or more gases from one or more gas sources 144 to a diffuser 146. One or more gas mixtures are introduced into the processing spaces 126 through a plurality of holes or nozzles in the diffuser 146. In one embodiment, one or more gases are supplied continuously to the diffuser 146, mixed in the diffuser 146, and introduced into the processing spaces 126. In another embodiment, a pump 150 maintains the pressure in the processing spaces; although the pump 150 is shown in Figure 1A as being coupled to both chambers 101a and 101b, it is intended that each of chambers 101a and 101b may utilize a separate pump 150.

[0035] In operation 203, RF power is applied to a mixture of one or more gases. In one embodiment, an RF source 154 delivers RF energy to the substrate support 130, promoting the generation of a capacitively coupled plasma between the substrate support 130 and the diffuser 146 of the gas distribution assembly 122. The RF power is supplied to the electrode 156, creating an electric field between the diffuser 146 and the substrate support 130 that ionizes the gas atoms in the processing space 126 between the substrate support 130 and the diffuser 146, causing them to emit electrons. The ionized atoms are accelerated to the substrate support 130, promoting the deposition or etching of a film on the substrate 165 positioned on the substrate support 130.

[0036] In operation 204, the density profile 301 of the plasma formed in the processing space 126 is adjusted. In one embodiment, which may be combined with other embodiments described herein, the rotating magnetic housing 104 of the rotating magnetic housing system 102 rotates at a certain rotational speed around the central axis 103 of the processing space 126 via the housing drive system 115. At least one of the rotational speed, the horizontal distance 133 from each of the magnets 143 to the central axis 103, or the vertical distance 135 from the center of each of the magnets 143 to the substrate 165 can be adjusted during operation 204. In one embodiment, which may be combined with other embodiments described herein, current is applied to the conductive wires 178 in the circular path. The vertical distance 135 can be adjusted by raising or lowering at least one of the rotating magnetic housing 104 or the substrate support 130. The rotating magnetic housing 104 generates a dynamic magnetic field. The magnetic field modifies the plasma shape, ion and radical concentrations, and ion and radical concentration transitions, thereby controlling the plasma density profile 301, ion density 302, and diameter. By controlling the plasma density profile 301, ion density 302, and diameter, the uniformity and properties of the deposited film are tuned. Each of the multiple magnets 143 is held in a retaining bracket with a certain pitch p between each of the multiple magnets 143. The pitch p corresponds to the distance between each adjacent magnet of the multiple magnets 143. The pitch p tunes the magnetic field generated by rotating the rotating magnetic housing 104. By adjusting the vertical spacing 135, the distance from the plasma sheath to the substrate is corrected, thereby controlling the ion and radical concentration transitions and the uniformity and properties such as stress of the deposited film.

[0037] In some embodiments, which may be combined with other embodiments described herein, the centers of each magnet 143 are fixed with a vertical gap 135 from the substrate 165 before plasma generation. In other embodiments, which may be combined with other embodiments described herein, the vertical gap 135 varies during plasma generation. The vertical gap 135 may be static or dynamic during plasma generation. In some embodiments, which may be combined with other embodiments described herein, the horizontal gap 133 from each magnet 143 to the central axis 103 is fixed before plasma generation. In other embodiments, which may be combined with other embodiments described herein, the horizontal gap 133 varies during plasma generation. The horizontal gap 33 may be static or dynamic during plasma generation.

[0038] In some embodiments, which may be combined with other embodiments described herein, the center of the conductive wire 178 is fixed with a vertical gap 182 from the substrate 165 before plasma generation. In other embodiments, which may be combined with other embodiments described herein, the vertical gap 182 varies during plasma generation. The vertical gap 182 may be static or dynamic during plasma generation. The vertical gap 182 can be adjusted by raising or lowering at least one of the electromagnet housing 172 or the substrate support 130. The electromagnet housing 172 generates a dynamic magnetic field. This magnetic field modifies the plasma shape, ion and radical concentrations, and ion and radical motion, controlling the plasma density profile 301, ion density 302, and diameter. By controlling the plasma density profile 301, ion density 302, and diameter, the uniformity and properties of the deposited film are tuned. By adjusting the vertical gap 182, the spacing of the plasma sheath to the substrate is modified, thereby controlling the motion of ions and radicals to control the uniformity and properties such as stress of the deposited film. In some embodiments, which may be combined with other embodiments described herein, the horizontal spacing 133 from the conductive wire 178 to the central axis 103 is fixed before plasma generation. In other embodiments, which may be combined with other embodiments described herein, this horizontal spacing 133 varies during plasma generation. The horizontal spacing 133 may be static or dynamic during plasma generation.

[0039] In another embodiment, which may be combined with other embodiments described herein, in operation 204, the orientation of the magnet 143 of the first half 137 of the rotating magnetic housing 104 is opposite to the orientation of the magnet 143 of the second half 139. In a certain embodiment, which may be combined with other embodiments described herein, in operation 204, adjustment of at least one of the air gap, cross-sectional area, or spacing between each winding of the conductive wire 178 can be adjusted. In another embodiment, which may be combined with other embodiments described herein, in operation 204, power is continuously applied to two or more electromagnets whose polarities are opposite or alternating.

[0040] In some embodiments, a substrate support drive system 136 rotates the substrate support 130 around the central axis 103 of the processing space 126 at a certain rotational speed. The strength of the magnets 143 is selected such that the peak of the plasma profile is positioned at a desired radial position on the surface of the substrate to be processed. In embodiments including magnets 143 facing opposite directions, the B field produced by the magnets 143 is distorted. In embodiments including adjustment of at least one of the air gap, cross-sectional area, or spacing between each winding of the conductive wire 178, the B field produced by the current flow through the conductive wire 178 is distorted. In embodiments including continuously supplying power to two or more electromagnets with opposing or alternating polarities, the B field produced by the current flow through the conductive wire 178 is distorted. The distortion of the B field causes the peak of the plasma sheath to shift. However, during processing, the rotation of the magnets 143 and the current flow through the conductive wire 178 in a circular path around the processing space 126 promote a more uniform exposure of the substrate to ions and radicals of the distorted plasma sheath. In other embodiments, rotating the substrate yields a uniform deposition profile. In contrast, conventional processes utilize a plasma profile where the peak is in the center of the substrate. Such a configuration results in non-uniform deposition (e.g., denser in the center) even when the substrate rotates, due to the increased ion density at the center of the substrate relative to the radially outer edges of the substrate.

[0041] It is intended that aspects of this disclosure can be used for permanent magnets, electromagnets, or combinations thereof. Furthermore, it is intended that the magnets may be arranged in a configuration in which their polarity alternates, or that magnets with the same polarity may be arranged in groups such as a group extending approximately 180 degrees.

[0042] In summary, this specification describes magnetic systems, electromagnetic systems, and methods for controlling the density profile of a plasma formed in the processing space of a processing chamber. In one embodiment, the method involves generating a static or dynamic magnetic field by rotating a rotary magnetic housing about the central axis of the processing space. This magnetic field modifies the plasma shape, ion and radical concentrations, and ion and radical concentration transitions, thereby controlling the plasma density file. By controlling the plasma density profile, the uniformity and properties of the deposited or etched film are tuned.

[0043] While the foregoing has focused on examples of the present disclosure, further examples of the present disclosure may be devised, provided they do not deviate from the fundamental scope of the present disclosure, the scope of which is defined by the claims that follow.

Claims

1. In order to generate plasma, radio frequency (RF) power is delivered to electrodes placed within a substrate support located inside the chamber body, Rotating the rotary magnetic housing around the outer surface of the chamber body such that, while the plasma is being generated in the chamber body, a plurality of magnets of the rotary magnetic housing move along a path around the outer surface of the chamber body, wherein each of the plurality of magnets is positioned in a retaining bracket coupled to a track positioned around the outer surface of the chamber body, and the retaining bracket is operated to slide along the track, thereby changing the horizontal distance from each of the magnets to the central axis of the chamber body, and the horizontal distance of each of the magnets to the central axis of the chamber body is changed while the plasma is being generated in the chamber body. A method that includes this.

2. The method according to claim 1, further comprising adjusting at least one of the rotational speed of the rotating magnetic housing or the pitch between each of the plurality of magnets.

3. The method according to claim 1 or 2, wherein a shield is provided on the side of the chamber body to confine a magnetic field within the chamber body, the shield having an opening, and the position of the opening is aligned with the position of the plurality of magnets.

4. The method according to claim 1 or 2, further comprising raising or lowering the rotating magnetic housing to adjust the vertical position of the rotating magnetic housing.

5. The method according to claim 4, wherein the vertical position is adjusted by a housing lift system coupled to the rotating magnetic housing and for raising and lowering the rotating magnetic housing.

6. The method according to claim 4 or 5, wherein the vertical position of each of the plurality of magnets relative to the substrate placed on the support surface of the substrate support is changed while the plasma is being generated in the chamber body.

7. An operable shield is provided on the side of the chamber body to confine the magnetic field inside the chamber body, and the operable shield has an opening, The method according to any one of claims 4 to 6, further comprising raising and lowering the actuated shield together with the rotating magnetic housing so that the position of the opening aligns with the positions of the plurality of magnets.

8. The method according to any one of claims 1 to 7, wherein the magnet of the first half of the rotating magnetic housing has a positive pole facing the central opening of the rotating magnetic housing, and the magnet of the second half of the rotating magnetic housing has a negative pole facing away from the central opening.

9. Generating plasma inside the chamber body, Rotating the rotating magnetic housing around the outer surface of the chamber body such that multiple magnets in the rotating magnetic housing move along a path around the outer surface of the chamber body, Includes, A shield is provided on the side of the chamber body to confine the magnetic field inside the chamber body, and the shield has an opening, the position of which the opening is aligned with the position of the plurality of magnets. A method wherein the rotating magnetic housing is coupled to a drive system, the drive system comprises a motor coupled to a belt, the belt is arranged around the rotating magnetic housing, the belt has a plurality of protrusions, each protrusion corresponding to one of a plurality of grooves in the outer side wall of the rotating magnetic housing.

10. The method according to claim 9, further comprising adjusting at least one of the following: the rotational speed of the rotating magnetic housing, the pitch between each of the plurality of magnets, or the radial distance of the plurality of magnets to the central axis of the chamber body.

11. The method according to claim 9, further comprising operating the plurality of magnets to slide along a track to change the horizontal distance from each of the magnets to the central axis of the chamber body, wherein the horizontal distance from each of the magnets to the central axis of the chamber body is changed while the plasma is being generated in the chamber body.

12. The method according to any one of claims 9 to 11, wherein the magnet of the first half of the rotating magnetic housing has a positive pole facing the central opening of the rotating magnetic housing, and the magnet of the second half of the rotating magnetic housing has a negative pole facing away from the central opening.

13. The method according to any one of claims 9 to 12, further comprising rotating a second rotary magnetic housing around the outside of a second chamber body, wherein the second rotary magnetic housing is coupled to the belt.

14. The method according to claim 13, wherein the belt rotates the rotating magnetic housing and the second rotating magnetic housing.

15. The method according to any one of claims 9 to 14, wherein the magnet is positioned within a retaining bracket, and the retaining bracket is operable to slide radially along a track from the central axis of the chamber body.

16. The method according to claim 13 or 14, further comprising adjusting the rotational speed of the rotating magnetic housing and the second rotating magnetic housing.

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