Double Plenum Fractal Shower Head

Abstract

To provide a dual plenum fractal (DPF) shower head for distributing different semiconductor process gases across a semiconductor wafer during processing.SOLUTION: A DPF shower head 100 includes multiple layers 116, with each layer having a pattern of gas distribution structures 146, 148, 146', 148', 146", 148" that are generally similar in shape to, but smaller in size than, the gas distribution structures in the layer immediately upstream. This "fractal" structure of gas flow paths allows for very uniform distribution of process gases across the surface of a semiconductor wafer during processing, thereby improving wafer uniformity.SELECTED DRAWING: Figure 5

Description

[Background Art]

[0001] [Incorporation by Reference] As part of the present application, a PCT request form is filed concurrently with the present specification. Each application from which the present application claims benefit or priority, as identified in the concurrently filed PCT request form, is hereby incorporated by reference in its entirety into the present specification for all purposes.

[0002] Semiconductor manufacturing tools often include a "showerhead" for dispersing and discharging semiconductor process gas onto a semiconductor wafer being processed. Such a showerhead typically includes a widely opened plenum space inside the showerhead, for example, a cylindrical volume having a diameter at least equal to the diameter of the wafer being processed, and this space is fluidly connected to a plurality of gas distribution ports disposed on the lower face of the showerhead. In some of such tools, the showerhead may be configured to be capable of distributing two different types of process gases across the entire wafer being processed.

[0003] The present specification discloses a new dual gas showerhead design for use in semiconductor processing tools. [Summary of the Invention]

[0004] One or more embodiments of the subject matter described herein are set forth in detail in the accompanying drawings and the following description. Other features, aspects, and advantages will become apparent from the following description, the drawings, and the appended claims.

[0005] In several implementation forms, a semiconductor processing apparatus including a showerhead is provided. The showerhead may include a body, a first plenum inlet, a second plenum inlet, a plurality of first gas distribution holes, and a plurality of second gas distribution holes. The body may include a plurality of layers, the plurality of layers including a suitable subset of two or more fractal layers, each of the fractal layers including a set of first radially symmetric gas distribution structures and a set of second radially symmetric gas distribution structures. Each of the first radially symmetric gas distribution structures may include a first hub plenum, a plurality of first spoke passages fluidly connected to the first hub plenum and extending radially outward from the first hub plenum, and a plurality of first riser ports, each of the first riser ports located at the far end of one of the first spoke passages. Each of the second radially symmetric gas distribution structures may include a second hub plenum, a plurality of second spoke passages fluidly connected to the second hub plenum and extending radially outward from the second hub plenum, and a plurality of second riser ports, each of which is located at the far end of one of the second spoke passages. For each fractal layer of the fractal layer, each of the first radially symmetric gas distribution structures in that fractal layer may be positioned such that the corresponding first hub plenum is located below the first riser port in the immediately upstream layer, and each of the second radially symmetric gas distribution structures in that fractal layer may be positioned such that the corresponding second hub plenum is located below the second riser port in the immediately upstream layer.

[0006] In some implementations, one of the fractal layers may further include a set of first partially radially symmetric gas distribution structures, each of which includes a first hub plenum with a number of first spoke passages fluidly connected to a number smaller than any of the first radially symmetric gas distribution structures in the fractal layer.

[0007] In some further such implementations, the body may further include a feed layer immediately upstream of the fractal layer having the first set of partially radially symmetric gas distribution structures. In such an implementation, the feed layer may include a plurality of first feed plenums, each of which includes one or more first feed spoke passages fluidly connected to each of the first feed plenums, each of which includes a first feed riser port at its far end, and each of which is located above and fluidly connected to one of the corresponding first hub plenums in the fractal layer located immediately downstream of the feed layer. In such an implementation, the first supply spoke passages, each having a first supply riser port that is fluidly connected to the first hub plenum of the first radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer, may each have a first length, and the first supply spoke passages, each having a first supply riser port that is fluidly connected to the first hub plenum of the first partially radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer, may each have a length longer than the first length.

[0008] In some further such implementations or some other such implementations, the fractal layer having the first set of partially radially symmetric gas distribution structures may further include a second set of partially radially symmetric gas distribution structures, each of which includes a second hub plenum having fewer second spoke passages than any of the second partially radially symmetric gas distribution structures in the fractal layer.

[0009] In some such implementations, the body may further include a feed layer immediately upstream of the fractal layer having the first set of partially radially symmetric gas distribution structures and the second set of partially radially symmetric gas distribution structures. In such an implementation, the supply layer may include a plurality of first supply plenums and a plurality of second supply plenums, each of the first supply plenums including one or more first supply spoke passages fluidly connected to each of the first supply plenums, each of the second supply plenums including one or more second supply spoke passages fluidly connected to each of the second supply plenums, each of the first supply spoke passages including a first supply riser port at its far end, each of the second supply spoke passages including a second supply riser port at its far end, each of the first supply riser ports located above and fluidly connected to one of the corresponding first hub plenums in the fractal layer located immediately downstream of the supply layer, and each of the second supply riser ports located above and fluidly connected to one of the corresponding second hub plenums in the fractal layer located immediately downstream of the supply layer.In such an implementation, the first supply spoke passages having a first supply riser port that is fluidly connected to the first hub plenum of the first radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer may each have a first length, the first supply spoke passages having a first supply riser port that is fluidly connected to the first hub plenum of the first partially radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer may each have a length longer than the first length, the second supply spoke passages having a second supply riser port that is fluidly connected to the second hub plenum of the second radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer may each have a second length, and the second supply spoke passages having a second supply riser port that is fluidly connected to the second hub plenum of the second partially radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer may each have a length longer than the second length.

[0010] In some implementations, the first radially symmetric gas distribution structure in the fractal layer may each include four first spoke passages, and the second radially symmetric gas distribution structure in the fractal layer may each include four second spoke passages.

[0011] In some further such implementations, the first spoke passage and the second spoke passage of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure in at least one of the fractal layers may be at the same height.

[0012] In some further such implementations or some other such implementations, each of the first spoke passages may be aligned with one of two orthogonal first passage axes, and each of the second spoke passages may be aligned with one of two orthogonal second passage axes, and the first passage axes may be 45° out of phase with the two passage axes (or at an angle of 45° with respect to the second passage axes).

[0013] In some further such implementations or some other such implementations, for each fractal layer in which an immediately upstream fractal layer exists, the first radially symmetric gas distribution structure of that fractal layer may have a center-to-center distance between its corresponding first riser ports that is approximately 50% of the center-to-center distance between the first riser ports in the first radially symmetric gas distribution structure of the immediately upstream fractal layer.

[0014] In some further such implementations or some other such implementations, for each fractal layer in which an immediately upstream fractal layer exists, the second radially symmetric gas distribution structure of that fractal layer may have a center-to-center distance between its corresponding second riser ports that is approximately 50% of the center-to-center distance between the second riser ports in the second radially symmetric gas distribution structure of the immediately upstream fractal layer.

[0015] In some implementations, at least three fractal layers may be provided.

[0016] In some implementation configurations, the main body may be formed from a ceramic material.

[0017] In some further such implementations, the body may be formed from multiple individual layers of ceramic material that are fused together.

[0018] In some further such implementations or some other such implementations, the main body may be a 3D-printed structure.

[0019] In some implementations, the apparatus may further comprise a processing chamber and a pedestal. In such implementations, the pedestal may be positioned within the processing chamber, and the showerhead may be positioned above the pedestal within the processing chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Various implementations disclosed herein are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings. In the figures, like components are indicated by the same reference numerals.

[0021] [Figure 1] FIG. 1 is an isometric view of an exemplary dual plenum fractal showerhead.

[0022] [Figure 2] FIG. 2 is an isometric view of the exemplary dual plenum fractal showerhead of FIG. 1 viewed from an opposite side.

[0023] [Figure 3] FIG. 3 is a top view of the exemplary dual plenum fractal showerhead of FIG. 1. [Figure 4] FIG. 4 is a bottom view of the exemplary dual plenum fractal showerhead of FIG. 1.

[0024] [Figure 5] FIG. 5 is an exploded isometric view of the exemplary dual plenum fractal showerhead of FIG. 1.

[0025] [Figure 6] FIG. 6 is a detailed view of an exemplary first radially symmetric gas distribution structure.

[0026] [Figure 7]Figure 7 is a detailed view of an exemplary first radially symmetric gas distribution structure.

[0027] [Figure 8] Figure 8 shows a size comparison of sets of radially symmetric gas distribution structures for each of three different fractal layers.

[0028] [Figure 9] Figure 9 is a diagram for understanding the relative ratios of the gas distribution structures of different fractal layers.

[0029] [Figure 10] Figure 10 is a plan view of the various layers of the exemplary double plenum fractal showerhead shown in Figure 1. [Figure 11] Figure 11 is a plan view of the various layers of the exemplary double plenum fractal showerhead shown in Figure 1. [Figure 12] Figure 12 is a plan view of the various layers of the exemplary double plenum fractal showerhead shown in Figure 1. [Figure 13] Figure 13 is a plan view of the various layers of the exemplary double plenum fractal showerhead shown in Figure 1. [Figure 14] Figure 14 is a plan view of the various layers of the exemplary double plenum fractal showerhead shown in Figure 1. [Figure 15] Figure 15 is a plan view of the various layers of the exemplary double plenum fractal showerhead shown in Figure 1.

[0030] [Figure 16] Figure 16 is an isometric view of one of the plenum volumes in the exemplary double plenum fractal showerhead shown in Figure 1.

[0031] [Figure 17] Figure 17 is an isometric view of the other plenum volume within the exemplary double plenum fractal showerhead shown in Figure 1.

[0032] [Figure 18]Figure 18 is an isometric view of both plenum volumes within the exemplary double plenum fractal showerhead shown in Figure 1.

[0033] [Figure 19] Figure 19 is a schematic diagram of a semiconductor processing chamber equipped with a shower head as described herein.

[0034] Figures 1-18 are drawn to scale within each figure, but the scale may differ from figure to figure. These figures illustrate only one example of the concepts described herein. As is readily apparent, the concepts described herein may be implemented in many alternative forms, all of which are considered to be within the scope of this disclosure. [Modes for carrying out the invention]

[0035] Importantly, the concepts described herein are not limited to any one aspect or implementation described herein, nor are they limited to any combination and / or substitution of any such aspect and / or implementation. Furthermore, each aspect and / or implementation of the present invention may be used alone or in combination with one or more other aspects and / or implementations of the present invention. For the sake of brevity, many of these substitutions and combinations are not individually described and / or illustrated herein.

[0036] The dual-plenum fractal showerhead described herein may be configured to uniformly distribute process gases to a processing volume located above a semiconductor wafer within a semiconductor processing chamber. Such dual-plenum fractal (DPF) showerheads can offer several advantages compared to conventional dual-plenum showerheads. For example, the DPF showerhead design described herein does not have a large plenum, such as a substantially circular plenum that spans the entire area where the showerhead's gas distribution holes are located. Therefore, compared to conventional open-plenum volumetric showerheads, the amount of process gas that needs to be introduced into the showerhead to be supplied through the showerhead's gas distribution ports can be significantly reduced. Another advantage is that, because the various flow paths in the DPF showerhead are fractal, the flow paths to each gas distribution port of a given plenum of the DPF showerhead can have equal or at least very similar flow resistances. This reduces or eliminates variations in the time it takes for the gas introduced into the plenum via the gas inlet to reach any given gas distribution port in that plenum. For example, the gas flowing through the plenum of a fractal showerhead generally exhibits essentially the same fluid flow characteristics, regardless of which gas distribution port it ultimately flows to. For instance, after reaching the fractal layer (detailed below) of such a showerhead, the gas may flow through a continuous gas channel in which channel segments of similar length, cross-sectional shape, and area proceed in the same manner. This can potentially promote more uniform wafer processing, as the entire surface of the wafer is exposed to the process gas almost simultaneously, unlike, for example, a showerhead in which the process gas flows out from the center of the showerhead and then, some time later, from its outer periphery. Another advantage of the DPF showerheads described herein is that these DPF showerheads may be manufactured from a variety of materials, including metals (such as stainless steel and aluminum) and ceramics (such as alumina and silicon oxide).

[0037] In general, a DPF showerhead as described herein may have two patterns of gas distribution holes on the underside of the showerhead, each corresponding to a different plenum. In the example of the DPF described later, the two patterns are approximately square patterns offset by 45° from each other (and some examples of gas distribution holes are omitted at the corners of each square pattern; for example, a 4x4 subpattern of gas distribution holes is omitted at each corner of each pattern). This 45° offset arrangement may be carried over to the internal layout of various channels that partially define the two gas distribution plenums within the exemplary DPF showerhead. This allows for extremely high-density packaging of gas channels within the DPF showerhead and reduces the pitch of gas distribution holes. This allows for finer distribution of process gases across the semiconductor wafer.

[0038] DPF showerheads may be used in both asynchronous and synchronous configurations. Asynchronous configurations involve alternately flowing process gases through each plenum at different times, while synchronous configurations involve simultaneously flowing process gases through both plenums. In further examples, DPF showerheads may be used in a hybrid configuration where process gases are continuously flowed through one plenum, and two or more different gases are alternately or periodically flowed through the other plenum. The former can be applied, for example, to atomic layer deposition or other processes that alternately apply process gases. In this case, the smaller volume of the DPF showerhead compared to conventional showerheads reduces the delay time until the desired amount of process gas is delivered to the wafer, potentially reducing the overall time of each gas administration cycle (and thus reducing processing time / increasing throughput). The latter can be applied to processing steps, for example, in which two process gases are simultaneously flowed into a processing space on a semiconductor wafer, causing the process gases to react and obtain a desired processing effect on the wafer. In this case, the high simultaneous supply capacity of the DPF showerhead can reduce the occurrence of a state where one reactant is present in the wafer processing space, while the other reactant is also absent. In particular, the DPF showerhead described herein may be useful in processes such as those described in U.S. Patent Application No. 62 / 767,198 (titled "METHODS FOR MAKING HARD MASKS USEFUL IN NEXT-GENERATION LITHOGRAPHY," filed November 14, 2018) and U.S. Patent Application No. 62 / 868,710 (titled "EUV PHOTORESIST WITH MULTIPLE EUV-ABSORBING ELEMENTS AND VERTICAL COMPOSITION GRADIENT," filed June 28, 2019). The entire contents of both applications are incorporated herein by reference.

[0039] Figure 1 is an isometric view of an exemplary double plenum fractal (DPF) showerhead. Figure 2 is an isometric view of the exemplary DPF showerhead of Figure 1 viewed from the opposite side. Figures 3 and 4 are top and bottom plan views of the same exemplary DPF showerhead of Figure 1.

[0040] In terms of appearance, the DPF showerhead 100 in Figure 1 is almost identical to many other double plenum showerheads. Specifically, it is roughly circular in shape and has multiple gas inlets on its top surface, for example, a first plenum inlet 102 and, in this example, multiple (four) second plenum inlets 104, and two hole patterns on its bottom surface, for example, a first hole pattern 112 and a second hole pattern 114 of gas distribution holes (for example, including a first gas distribution hole 106 and a second gas distribution hole 108, respectively). Both the first hole pattern 112 and the second hole pattern 114 are roughly rectangular (or more precisely, square) arrays, but the two rectangular arrays are oriented with a 45° phase difference from each other. In addition, there is one additional first gas distribution hole 106 that is not part of the rectangular first hole pattern 112, and this additional first gas distribution hole 106 is located in the center of the DPF showerhead 100. In most conventional showerheads, the hole pattern of the gas distribution holes is usually constrained to have a roughly circular outer shape. That is, the hole pattern extends outward to the circular boundary, and all of the gas distribution holes in a given plenum are located within that circular boundary and are distributed roughly evenly within that boundary. However, the exemplary DPF showerhead is not configured in this way (although it is possible to configure it in this way, as will be detailed below). As can be seen from the figure, the first gas distribution holes 106 and the second gas distribution holes 108 are distributed roughly evenly within a circular wafer overlap region 110 (in this case, the wafer overlap region 110 is the same size as the semiconductor processing wafer that is normally placed below the DPF showerhead during processing, for example, with a diameter of 300 mm (however, in some implementations, such an even hole distribution may be maintained over a circular region of a larger diameter, for example, in order to achieve uniform gas distribution to and beyond the outer edge of the wafer during processing)). However, both the first hole pattern 112 and the second hole pattern 114 have portions that extend beyond the wafer overlap region 110. The first gas distribution holes 106 and the second gas distribution holes 108, located outside the wafer overlap region 110, are no longer evenly distributed relative to each other.As will become clear in the following description, in the exemplary DPF showerhead, the gas distribution ports located outside the wafer overlap region 110 are included to allow the various gas distribution structures of each plenum in the various layers within the DPF showerhead to be of the same design for each layer. It should be understood that, with appropriate modifications, for example, by using variably designed gas distribution structures near the outer periphery of the DPF showerhead 100 in these layers, a DPF showerhead may be provided in which the gas distribution ports located outside the wafer overlap region 110 are reduced or eliminated. Such alternative implementations are also considered to be within the scope of this disclosure.

[0041] In the exemplary implementation, the array spacings d1 and d2 of the first hole pattern 112 and the second hole pattern 114 are,

number

[0042] Figure 5 is an exploded isometric view of the exemplary DPF showerhead of Figure 1. As can be seen from this exploded view, the DPF showerhead 100 may be divided into several different layers 116. Each layer has a different gas distribution structure. It is recognized that such a DPF showerhead 100 can be manufactured, for example, by machining or otherwise forming each layer as a separate component, and then joining or fusing the various layers to form a laminated stack to form the DPF showerhead. However, in other implementation forms, equivalent structures may be produced using other techniques, for example, by additive manufacturing, the DPF showerhead structure may be "3D printed" from metal, ceramic, or other materials.

[0043] In this explanation, when referring to a layer "upstream" of a particular layer, it is understood to mean the layer closer to the "top" of the DPF showerhead 100, for example, the layer closer to the first plenum inlet 102 or the second plenum inlet 104. When referring to a layer "downstream" of a particular layer, it is understood to mean the layer closer to the "bottom" of the DPF showerhead 100, for example, the layer closer to the first gas distribution hole 106 or the second gas distribution hole 108. When referring to a layer "immediately upstream" of a particular layer, it refers to the layer closest to that particular layer upstream, and similarly when referring to a layer "immediately downstream" of a particular layer, it refers to the layer closest to that particular layer downstream. Furthermore, a given showerhead may be arbitrarily divided into multiple layers in any manner deemed appropriate, but when the term "layer" is used in this application, it is understood to refer to the layers shown in Figure 5. For example, each layer has vertical holes (or gas distribution holes) on one side and gas channels / plenums on the other side, and each riser port / gas distribution hole within the layer terminates in one of the gas channels (the inlet layer may be an exception, having only vertical holes internally as a first plenum inlet 102 and a second plenum inlet 104).

[0044] The various layers 116 may include, for example, an inlet layer 118 (including layer 116a), a supply layer 120 (including, for example, layers 116b and 116c), and a fractal layer 122 (including, for example, layers 116d, 116e, and 116f). The inlet layer 118 may include through-holes or other structures, such as a first plenum inlet 102 and a second plenum inlet 104, which allow process gas to be introduced into the plenum of the DPF showerhead 100.

[0045] The supply layer 120 may include, for example, a layer 116b that includes a first supply passage 124 and a second supply passage 126. Each of these layers may have one of the first plenum inlets 102 or the second plenum inlets 104 fluidly connected to the corresponding first supply riser port 138 or the second supply riser port 140 within layer 116b. 140 The fluid may pass through the bottom of layer 116b and fluidly connect either the first supply passage 124 or the second supply passage 126 to the first supply plenum 130 or the second supply plenum 132 in layer 116c.

[0046] One of the supply layers 120, layer 116c, may have multiple gas distribution structures. Each gas distribution structure generally takes the form of a central plenum having multiple supply spoke passages extending outward. For example, layer 116c may have multiple first supply plenums 130 (four are shown in the figure, but there may be other numbers; generally, the same number as the first supply riser ports 138 contained in the immediately upstream layer 116). Similarly, layer 116c may have multiple second supply plenums 132 (four are shown in the figure, but there may be other numbers; generally, the same number as the second supply riser ports 140 contained in the immediately upstream layer 116).

[0047] Each first supply plenum 130 may have a plurality of first supply spoke passages 134 that radiate outward from the first supply plenum 130. Each first supply spoke passage 134 may terminate at a corresponding first supply riser port 138 in layer 116c that leads to the immediately downstream layer 116 (e.g., layer 116d). Similarly, each second supply plenum 132 may have a plurality of second supply spoke passages 136 that radiate outward from the second supply plenum 132. Each second supply spoke passage 136 may terminate at a corresponding second supply riser port 140 in layer 116c that leads to the immediately downstream layer 116. supply The riser port 140 may be positioned approximately centered on the corresponding plenum structure of the immediately downstream layer.

[0048] Please note that the supply spoke passages radiating from each supply plenum do not necessarily have the same flow resistance due to differences in the shape of the supply spoke passages. This will be explained in more detail later.

[0049] It should also be noted that the supply passage and supply spoke passage shown in Figure 5 each include two internal support walls 128. The internal support walls 128 generally extend along the length of the passage from one end to the other. Such support walls 128 (or other structures) may be optionally included in some implementations, for example. For example, if the DPF showerhead 100 consists of green-processed ceramic layers that are fired in a kiln after lamination to form a single, fused, and hardened ceramic component, it may be desirable for wider passages to include one or more internal support walls 128 (or other support structures) to mechanically support the layer forming the "upper" of such passages. Such support walls 128 may not be necessary in other shapes and / or other manufacturing techniques.

[0050] The process gas that has flowed through the supply layer 120 is then led to the fractal layer 122. Each fractal layer 122 generally has the same repeating radially symmetric gas distribution structure (or a portion thereof) for each plenum, and the radially symmetric gas distribution structure in each layer immediately downstream of a given layer is a scaled-down version of the corresponding radially symmetric gas distribution structure in that layer. In this example, each radially symmetric gas distribution structure in a given layer is approximately 50% smaller in overall size than the corresponding radially symmetric gas distribution structure in the immediately upstream layer. However, different scaling factors may be used in other implementations. Figure 8 is a size comparison of each set of radially symmetric gas distribution structures in the three fractal layers 122 shown in Figure 5. Each set of radially symmetric gas distribution structures is shown scaled to the other sets of radially symmetric gas distribution structures shown. As can be seen from the dashed lines passing through the centers of the selected riser ports in each set of radially symmetric gas distribution structures, the intercenter spacing of vertical holes in each set of radially symmetric gas distribution structures is reduced by 50% in each fractal layer 122 compared to the set of radially symmetric gas distribution structures immediately upstream.

[0051] Due to this characteristic, the gas distribution passages in each plenum within the DPF showerhead have a "fractal" appearance, which is the origin of the name "double plenum fractal showerhead". Note that in some implementations, certain substructures in each radially symmetric gas distribution structure may be enlarged or reduced from the corresponding structure in the radially symmetric gas distribution structure of the immediately upstream layer. For example, in the exemplary DPF showerhead 100, the center-to-center distance between the riser ports of a given radially symmetric gas distribution structure is immediately Upstream The distance between the corresponding centers of the riser ports in the radially symmetric gas distribution structure is 50%. However, the cross-sectional width of each spoke passage is immediately UpstreamThe intercenter spacing in the radially symmetric gas distribution structure may actually increase. Figure 9 is a diagram that provides an additional understanding of such properties. In Figure 9, three sets (sets from each of the three fractal layers 122), each consisting of one first radially symmetric gas distribution structure 146 and four adjacent second radially symmetric gas distribution structures 148, are all the same in terms of intercenter distance between their respective vertical holes and are expanded and contracted so that their centers align with one another. As can be seen from the figure, the first and second radially symmetric gas distribution structures 146' and 148' of layer 116e (shown by dotted contours) have spoke passages that are slightly wider (with respect to the intercenter distance between vertical holes) than the corresponding first and second radially symmetric gas distribution structures 146 and 148. Similarly, the first and second radially symmetric gas distribution structures 146" and 148" (shown by dashed contours) of layer 116f have spoke passages that are slightly wider (with respect to the center-to-center distance between vertical holes) than the corresponding first and second radially symmetric gas distribution structures 146' and 148'.

[0052] Furthermore, it can be seen that the diameters of the first and second vertical holes of each radially symmetric gas distribution structure with respect to the intercenter spacing may differ between the radially symmetric gas distribution structures in the fractal layers immediately upstream / downstream of each other.

[0053] In some implementations, a portion of the radially symmetric gas distribution structure of one or more fractal layers 122 may be provided in a "partial form," i.e., in a state where only a portion of the radially symmetric gas distribution structure exists. For example, the radially symmetric gas distribution structure in an exemplary DPF showerhead is +-shaped or ×-shaped, each having four spoke passages that radiate outward from the hub plenum. In this case, a partially radially symmetric gas distribution structure has a similar structure, but one or two of the spoke passages may be missing.

[0054] For example, in layer 116d, there are a plurality of first radially symmetric gas distribution structures 146 and a plurality of second radially symmetric gas distribution structures 148, each of which is either +-shaped or ×-shaped (however, note that the first radially symmetric gas distribution structures 146 are larger than the second radially symmetric gas distribution structures 148; see the above explanation regarding array spacing). The first radially symmetric gas distribution structures 146 and the second radially symmetric gas distribution structures 148 each have a corresponding hub plenum and a plurality of spoke passages extending radially outward from there.

[0055] Figure 6 is a diagram showing an exemplary first radially symmetric gas distribution structure 146, and Figure 7 is a diagram showing an exemplary second radially symmetric gas distribution structure 148. Figures 6 and 7 are shown to the same scale. As can be seen from the figures, the first radially symmetric gas distribution structure 146 has a first hub plenum 158. The first hub plenum 158 is located directly below and may be fluidly connected to the corresponding first riser port 162' (or, in some examples, a first supply riser port 138) of the immediately upstream layer 116. The first hub plenum 158 may have a plurality (four in this example) of first spoke passages 154 extending radially symmetrically outward from the first hub plenum 158. Each first spoke passage 154 may terminate at the corresponding first riser port 162 (or, in the case of the furthest downstream layer 116, the corresponding first gas distribution hole 106).

[0056] Similarly, the second radially symmetric gas distribution structure 148 shown in Figure 7 has a second hub plenum 160. The second hub plenum 160 is located directly below and may be fluidly connected to the corresponding second riser port 164' (or, in some examples, a second supply riser port 140) of the immediately upstream layer 116. The second hub plenum 160 may have a plurality (four in this example) of second spoke passages 156 that extend radially outward from the second hub plenum 160 in a radially symmetric manner. Each second spoke passage 156 may terminate at the corresponding second riser port 164 (or, in the case of the furthest downstream layer 116, the corresponding second gas distribution hole 108).

[0057] Returning to Figure 5, note that the first radially symmetric gas distribution structure 146 and the second radially symmetric gas distribution structure 148 generally occupy the central region of layer 116d, while the first partially radially symmetric gas distribution structure 142 and the second partially radially symmetric gas distribution structure 144 are used near the outer periphery of layer 116d. Each of the first partially radially symmetric gas distribution structures 142 has only two first spoke passages 154, and each of the second partially radially symmetric gas distribution structures 144 has only three second spoke passages 156. The remaining fractal layer 122 in this example consists only of radially symmetric gas distribution structures and does not have partially radially symmetric gas distribution structures. However, in other implementations, other fractal layers 122 may similarly include partially radially symmetric gas distribution structures.

[0058] While the structure of the exemplary DPF showerhead 100 is clearly shown in the above drawings, Figures 10 to 15 further show plan views of layers 116a to 116f of the exemplary double plenum fractal showerhead in Figure 1. These drawings overlap somewhat with the above drawings, but they further clarify the structure and may be referenced in particular in the following description.

[0059] When a partially radially symmetric gas distribution structure is used, an unbalanced flow may occur in the DPF showerhead as shown in the figure unless certain mitigation measures are taken. For example, if the same amount of process gas is supplied to each hub plenum of a radially symmetric gas distribution structure at the same gas flow rate as to the corresponding partially radially symmetric gas distribution structure, the gas flow rate in each riser port of the partially radially symmetric gas distribution structure will increase compared to the riser ports of a radially symmetric gas distribution structure. This is because the partially radially symmetric gas distribution structure has fewer spoke passages and corresponding riser ports compared to a radially symmetric gas distribution structure. Therefore, the total cross-sectional area of ​​the riser ports of the partially radially symmetric gas distribution structure is smaller compared to the riser ports of a radially symmetric gas distribution structure, and as a result, a larger amount of gas flows through each riser port of the partially radially symmetric gas distribution structure compared to when flowing through each riser port of a radially symmetric gas distribution structure. This is undesirable because, in the subsequent layer 116, downstream radially symmetric gas distribution structures supplied with gas from a partially radially symmetric gas distribution structure receive an unbalanced amount of gas compared to radially symmetric gas distribution structures supplied with gas from radially symmetric gas distribution structures in those downstream layers. As a result, the gas supply through the gas distribution holes ultimately becomes non-uniform.

[0060] To mitigate or prevent such effects, supply passages that supply process gas to a partially radially symmetric gas distribution structure immediately downstream from a supply riser port may be designed to be longer than supply passages that supply process gas to a radially symmetric gas distribution structure immediately downstream from the same supply riser port. For example, in Figure 12, it can be seen that two of the three first supply spoke passages 134 that radiate from each of the first supply plenums 130 are approximately twice as long as the remaining first supply spoke passages 134 that radiate from each of the first supply plenums 130. This increased length increases the flow resistance of these first supply spoke passages 134, thereby reducing the flow rate to the first supply riser ports 138 located at the ends of these first supply spoke passages 134 to approximately half the flow rate at the first supply riser ports 138 of the remaining first supply spoke passages 134 that radiate from each of the first supply plenums 130. Similarly, one of the four second supply spoke passages 136 radiating from each second supply plenum 132 is longer than the other second supply spoke passages 136 radiating from each second supply plenum 132. This produces a similar effect, reducing the fluid flow experienced by the partially radially symmetric gas distribution structure in the immediately downstream layer having only three spokes, thereby potentially homogenizing the gas flow from the DPF showerhead 100.

[0061] After the gas reaches each gas distribution structure, the gas flow may be divided substantially evenly among the various spoke passages in that distribution structure before moving to the next set of gas distribution structures in the immediately downstream layer (or flowing out through the gas distribution port). This repeated division characteristic functions to evenly distribute the process gas over a wide area of ​​the showerhead. In this example, three fractal layers 122 are provided, but more or fewer such layers may be used depending on how finely or coarsely the gas is to be distributed.

[0062] In the exemplary DPF showerhead 100, it can be seen that the radially symmetric gas distribution structure in a given fractal layer 122 of each plenum has spoke passages aligned with passage axes that are 45° out of phase with each other. For example, in the fractal layer 116d of Figure 5, the first radially symmetric gas distribution structure 146 has a first spoke passage 154 aligned with the first passage axis 150, and the second radially symmetric gas distribution structure 148 has a second spoke passage 156 aligned with the second passage axis 152. As can be seen from the figure, the first passage axis 150 and the second passage axis 152 are 45° out of phase with each other.

[0063] Figure 16 is an isometric abstraction of one of the plenum volumes in the exemplary double plenum fractal showerhead of Figure 1. Figure 17 is an isometric abstraction of the other of the plenum volumes in the exemplary double plenum fractal showerhead of Figure 1. Figure 18 is an isometric abstraction of both plenum volumes in the exemplary double plenum fractal showerhead of Figure 1.

[0064] In Figures 16 to 18, it is easy to see that the hub plenum of each radially symmetric gas distribution structure or partially radially symmetric gas distribution structure within each fractal layer is fluidly connected to a riser port at the far end of one of the spoke passages that radiate from the hub plenum of the radially symmetric gas distribution structure in the immediately upstream fractal layer (or a supply riser port in one of the supply layers 120). By arranging the radial spoke passages of each plenum within each layer with a 45° phase shift, it is possible to achieve extremely high density of gas distribution holes on the bottom surface of the DPF showerhead while making the flow resistance from the inlet of any plenum to any gas distribution port approximately equal. For example, such a configuration allows each of the various second spoke passages 156 to partially extend into the space between two adjacent first spoke passages 154, thereby allowing each of the corresponding second riser ports 164 (or second gas distribution holes 108 of layer 116f) to be positioned midway along the line between the two first riser ports 162 (or first gas distribution holes 106) closest to that second riser port.

[0065] Furthermore, in the exemplary DPF showerhead, multiple gas distribution holes and / or radially symmetric gas distribution structures exist outside the wafer overlap region 110. Therefore, it should be noted that the process gas supplied from these generally tends to be pushed outward away from the wafer by the process gas supplied from the radially symmetric gas distribution structures and / or gas distribution holes within the wafer overlap region 110, and thus likely does not actually reach the wafer. Therefore, the process gas supplied from the gas distribution holes outside the wafer overlap region 110 can be considered, in effect, excess or wasted process gas. As described above, in some implementations, the number of gas distribution holes located outside the wafer overlap region may be reduced or eliminated to reduce or eliminate the amount of excess or wasted gas generated by the DPF showerhead. However, if this is done, it may be necessary to broadly customize the various radially symmetric gas distribution structures used to ensure uniformity of the gas flow through the gas distribution holes (in fact, as a result, these may no longer be reasonably considered “radially symmetric gas distribution structures”). By including radially symmetric gas distribution structures and / or gas distribution holes located outside the wafer overlap region 110, the flow splitting that occurs in each radially symmetric gas distribution structure becomes the same for all radially symmetric gas distribution structures within the fractal layer, thereby enabling uniform flow through the gas distribution holes of each plenum without complex modifications to the radially symmetric gas distribution structures within the fractal layer 122. It should also be noted that as the overall size of the radially symmetric gas distribution structures decreases, they become increasingly susceptible to the effects of minute dimensional variations, and it may become increasingly difficult to individually fine-tune the gas flow characteristics of each radially symmetric gas distribution structure through customization. Therefore, the method shown for the exemplary DPF showerhead 100, although it may generate some excess or wasted gas, results in nearly uniform process gas distribution across the entire wafer without customizing the radially symmetric gas distribution structures in each fractal layer.

[0066] As mentioned above, the lower surface of the DPF showerhead 100 is provided with a central hole, which is a gas distribution hole that does not belong to any of the hole patterns. Such a central hole may be optionally included to further improve the uniformity of wafer processing and may, for example, be fluidly connected to the first plenum inlet. Depending on the specific process conditions required, it may be desirable to make the central hole the same size as the other gas distribution holes of the first plenum, or to make it larger or smaller than these other gas distribution holes. In implementations using a central hole of the same size as the other first gas distribution holes, the flow rate through the central hole may be changed in some such implementations by changing the flow resistance within the showerhead from the first gas inlet to the central hole. The central hole does not need to have the same flow resistance as the other first gas distribution holes of the first plenum.

[0067] Furthermore, while this disclosure has primarily described a double plenum fractal showerhead, it should be noted that similar principles may be implemented in the form of a single plenum fractal showerhead, for example, by simply omitting one of the plenums and the associated structure. Such a single-plenum fractal (SPF) showerhead is also considered to be within the scope of this disclosure.

[0068] The DPF (and SPF) showerheads relating to the concepts described herein may be used in semiconductor processing processes as described above. For example, a DPF or SPF showerhead may be used in a semiconductor processing chamber, such as the semiconductor processing chamber 170 in Figure 19. Such a DPF or SPF showerhead 100 may be suspended within the chamber 170 via a shaft 176. The shaft 176 may include a gas supply passage for supplying process gas to the inlet of the DPF or SPF showerhead in order to distribute the process gas over an entire wafer 174 that can be supported within the chamber 170 by a base 172.

[0069] In some implementations, a controller may be provided. Ra is It may be part of a system. The system may include the examples described above, and may also be operably connected to various valves, mass flow controllers, pumps, etc., and capable of receiving information from and / or controlling these devices. Such a system may include a semiconductor processing apparatus that includes one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as wafer pedestals and gas flow systems). These systems may be integrated with electronic equipment for controlling the operation of the system before, during, and after processing of semiconductor wafers or substrates. The electronic equipment may also be called a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. These processes include supplying various gases to DPF or SPF showerheads, etc., as described herein, temperature setting (e.g., heating and / or cooling), pressure setting, vacuum setting, power setting, flow rate setting, fluid supply setting, and position and operation setting.

[0070] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software, which receives and sends instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. An integrated circuit may include a chip as firmware that stores program instructions, a chip defined as a digital signal processor (DSP), an application-specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). Program instructions may also be instructions communicated to the controller as various individual settings (or program files), which define operating parameters for performing a particular process on or for a semiconductor wafer, or for a system. In some implementations, operating parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps in the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0071] In some implementations, the controller may be part of a computer or integrated with a computer. Here, the computer may be integrated with the system, integrated with the system, or otherwise networked with the system, or a combination of these. For example, the controller may reside on a “cloud” or reside in all or part of a factory host computer system. This enables remote access to wafer processing. The computer can enable remote access to the system to monitor the progress of manufacturing processes, investigate past manufacturing history, or analyze trends or performance metrics from multiple manufacturing processes; it can modify parameters of the current process, set subsequent processes, or start new processes. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network, which may include a local network or the internet. The remote computer may include a user interface that allows input and programming of parameters and / or settings. These parameters and / or settings are then communicated from the remote computer to the system. In some examples, the controller receives instructions as data, which specifies the parameters for each process executed in one or more operations. It should be understood that these parameters may be specific to the type of process to be executed and the type of tools to which the controller is configured to interact with or control. Therefore, as described above, the controller may be distributed, for example, by comprising one or more individual controllers. These individual controllers are networked and operate toward common purposes, such as the processes and controls described herein. An example of a distributed controller for such purposes is one or more integrated circuits mounted in a chamber that communicates with one or more remotely located integrated circuits (e.g., at the platform level or as part of a remote computer).These integrated circuits work together to control the process in the chamber.

[0072] Non-limiting examples of systems include plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing systems that may be used in connection with or in use in the manufacturing and / or production of semiconductor wafers.

[0073] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more of the following: other tool circuits or tool modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, the main computer, another controller, or tools used for material transport to transfer wafer containers to tool locations and / or load ports within the semiconductor production plant.

[0074] For the purposes of this disclosure, the term “fluidically connected” is used with respect to volumes, plenums, holes, etc., that can be connected to each other to form a fluid connection, similar to how the term “electrically connected” is used with respect to components that are connected to each other to form an electrical connection. Where the term “fluidically interposed” is used, it may be used to refer to a component, volume, plenum, or hole that is fluidly connected to at least two other components, volumes, plenums, or holes, in which case the fluid flowing from one of these at least two other components, volumes, plenums, or holes to the other or one of the remaining ones will first flow through the “fluidically interposed” component before reaching the other or one of the remaining ones. For example, if a pump is fluidly interposed between a reservoir and an outlet, the fluid flowing from the reservoir to the outlet will first flow through the pump before reaching the outlet.

[0075] Furthermore, it should be understood that the general term "riser port" in this specification may refer not only to the riser port of each radially symmetric gas distribution structure, but also to the supply riser port and gas distribution hole. Therefore, for example, a gas distribution hole may be described not only as a gas distribution hole, but also as a riser port. Similarly, a supply riser port may be simply referred to as a riser port. In general, (when the shower head is installed in a processing chamber) the riser port on the bottom surface of a DPF or SPF shower head may also be referred to as a "gas distribution hole."

[0076] When phrases such as "for each <item> of one or more <items>" or "for each <item> of one or more <items>" are used herein, they should be understood to include both groups of single items and groups of multiple items. That is, the phrase "each" is used in the sense that in programming languages ​​this phrase is used to refer to each item, whatever the population of items being referenced may be. For example, if the population of items being referenced is a single item, the term "each" refers only to that single item (despite the fact that, according to dictionary definitions, the term "each" is often defined as "one of two or more things") and does not imply that there must be at least two of these items.

[0077] Furthermore, it should be understood that in this disclosure, the term “layer” may refer to either a physically separable layer (e.g., a layer that is bonded, fused, or otherwise fixed to another layer in a laminated structure), or more generally, a region of structure defined between two reference planes. Such a structure may consist of multiple components that are assembled or joined together, or in some cases, it may be a monolithic structure (e.g., a single-piece structure). For example, a cast or additively manufactured single-piece part may be considered to have distinct “layers” even if the part is not actually created by joining physically separate layers (although it can be argued that most additively manufactured parts have an inherently layered structure, as they are usually printed one thin layer at a time). Also, it should be recognized that the “layers” of a part actually manufactured as a laminate (i.e., from individual layers) may not necessarily coincide with one of these individual layers. For example, a layer of a part may be defined to include only a portion of such individual layer portions, a portion of two adjacent individual layer portions, or a portion of one or two non-adjacent individual layer portions and the individual layer portions between them. This disclosure includes the following examples of applications. [Application Example 1] A semiconductor processing device, The shower head includes a main body, a first plenum inlet, a second plenum inlet, a plurality of first gas distribution holes, and a plurality of second gas distribution holes. The body comprises a plurality of layers, the plurality of layers comprising a suitable subset of two or more fractal layers, each of the fractal layers comprising a first set of radially symmetric gas distribution structures and a second set of radially symmetric gas distribution structures. Each of the first radially symmetric gas distribution structures includes a first hub plenum, a plurality of first spoke passages fluidly connected to the first hub plenum and extending radially outward from the first hub plenum, and a plurality of first riser ports, each of the first riser ports located at the far end of one of the first spoke passages. Each of the aforementioned second radially symmetric gas distribution structures includes a second hub plenum, a plurality of second spoke passages fluidly connected to the second hub plenum and extending radially outward from the second hub plenum, and a plurality of second riser ports, each of which is located at the far end of one of the second spoke passages. For each fractal layer of the aforementioned fractal layer, Each of the first radially symmetric gas distribution structures in the fractal layer is positioned such that the corresponding first hub plenum is located below the first riser port in the immediately upstream layer. Each of the second radially symmetric gas distribution structures in the fractal layer is positioned such that the corresponding second hub plenum is located below the second riser port in the immediately upstream layer. Semiconductor processing unit. [Application Example 2] The semiconductor processing apparatus described in Application Example 1, One of the fractal layers further comprises a set of first partially radially symmetric gas distribution structures, each of the first partially radially symmetric gas distribution structures comprising a first hub plenum with a number of first spoke passages fluidly connected to a number smaller than any of the first radially symmetric gas distribution structures in that fractal layer. Semiconductor processing unit. [Application Example 3] The semiconductor processing apparatus described in Application Example 2, The main body further includes a supply layer immediately upstream of the fractal layer having the first set of partially radially symmetric gas distribution structures, The supply layer comprises a plurality of first supply plenums, each of which comprises one or more first supply spoke passages fluidly connected to each of which first supply plenums, each of which comprises a first supply riser port at its far end, each of which is located above and fluidly connected to one of the corresponding first hub plenums in the fractal layer located immediately downstream of the supply layer. The first supply spoke passages, each having a first supply riser port that is fluidly connected to the first hub plenum of the first radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer, each have a first length. The first supply spoke passages, each having a length longer than the first length, have a first supply riser port that is fluidly connected to the first hub plenum of the first partially radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer. Semiconductor processing unit. [Application Example 4] The semiconductor processing apparatus described in Application Example 2, The fractal layer having the first set of partially radially symmetric gas distribution structures further comprises a second set of partially radially symmetric gas distribution structures, each of the second partially radially symmetric gas distribution structures comprising a second hub plenum having fewer second spoke passages than any of the second radially symmetric gas distribution structures in that fractal layer. Semiconductor processing unit. [Application Example 5] The semiconductor processing apparatus described in Application Example 4, The main body further includes a supply layer immediately upstream of the fractal layer having the first set of partially radially symmetric gas distribution structures and the second set of partially radially symmetric gas distribution structures, The supply layer comprises a plurality of first supply plenums and a plurality of second supply plenums, each of the first supply plenums comprising one or more first supply spoke passages fluidly connected to each of the first supply plenums, each of the second supply plenums comprising one or more second supply spoke passages fluidly connected to each of the second supply plenums, each of the first supply spoke passages comprising a first supply riser port at its far end, each of the second supply spoke passages comprising a second supply riser port at its far end, each of the first supply riser ports located above and fluidly connected to one of the corresponding first hub plenums in the fractal layer located immediately downstream of the supply layer, and each of the second supply riser ports located above and fluidly connected to one of the corresponding second hub plenums in the fractal layer located immediately downstream of the supply layer. The first supply spoke passages, each having a first supply riser port that is fluidly connected to the first hub plenum of the first radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer, each have a first length. The first supply spoke passages, each having a length longer than the first length, have a first supply riser port that is fluidly connected to the first hub plenum of the first partially radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer. The second supply spoke passages, each having a second supply riser port that is fluidly connected to the second hub plenum of the second radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer, each have a second length. The second supply spoke passages, each having a length longer than the second length, have a second supply riser port that is fluidly connected to the second hub plenum of the second partially radially symmetric gas distribution structure in the fractal layer located immediately downstream of the supply layer. Semiconductor processing unit. [Application Example 6] The semiconductor processing apparatus described in Application Example 1, Each of the first radially symmetric gas distribution structures in the fractal layer includes four first spoke passages, and each of the second radially symmetric gas distribution structures in the fractal layer includes four second spoke passages. Semiconductor processing unit. [Application Example 7] The semiconductor processing apparatus described in Application Example 6, In at least one of the fractal layers, the first spoke passage and the second spoke passage of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure are at the same height. Semiconductor processing unit. [Application Example 8] The semiconductor processing apparatus described in Application Example 6, For each fractal layer of the aforementioned fractal layer, Each of the first spoke passages is aligned with one of the two orthogonal first passage axes, Each of the second spoke passages is aligned with one of the two orthogonal second passage axes, The first passage axis is out of phase with the second passage axis by 45°. Semiconductor processing unit. [Application Example 9] The semiconductor processing apparatus described in Application Example 6, For each fractal layer in which an immediately upstream fractal layer exists, the first radially symmetric gas distribution structure of that fractal layer has a center-to-center distance between its corresponding first riser ports that is approximately 50% of the center-to-center distance between the corresponding first riser ports in the first radially symmetric gas distribution structure of the immediately upstream fractal layer. Semiconductor processing unit. [Application Example 10] The semiconductor processing apparatus described in Application Example 6, For each fractal layer in which an immediately upstream fractal layer exists, the second radially symmetric gas distribution structure of that fractal layer has a center-to-center distance between its corresponding second riser ports that is approximately 50% of the center-to-center distance between the corresponding second riser ports in the second radially symmetric gas distribution structure of the immediately upstream fractal layer. Semiconductor processing unit. [Application Example 11] The semiconductor processing apparatus described in Application Example 1, At least three fractal layers are provided. Semiconductor processing unit. [Application Example 12] The semiconductor processing apparatus described in Application Example 1, The aforementioned body is formed from a ceramic material. Semiconductor processing unit. [Application Example 13] The semiconductor processing apparatus described in Application Example 12, The main body is formed from individual layers of multiple ceramic materials that are fused together. Semiconductor processing unit. [Application Example 14] The semiconductor processing apparatus described in Application Example 12, The aforementioned main body is a 3D printed structure. Semiconductor processing unit. [Application Example 15] A semiconductor processing apparatus described in any one of Application Examples 1 to 14, Processing chamber and The base and, further including, The base is located inside the processing chamber, The shower head is located above the base within the processing chamber. Semiconductor processing unit.

Claims

1. A semiconductor processing device, It is a shower head, A body having a first surface and a second surface facing in the opposite direction from the first surface, One or more first plenum entrances, One or more second plenum entrances, A plurality of first gas distribution holes arranged across the entire second surface, A plurality of second gas distribution holes arranged across the entire second surface, A shower head including, A plurality of first radially symmetric gas distribution structures and a plurality of second radially symmetric gas distribution structures, comprising a plurality of sets of the first radially symmetric gas distribution structures and the second radially symmetric gas distribution structures, the entire set of the first radially symmetric gas distribution structures and the second radially symmetric gas distribution structures being located within a cylindrical volume defined by a circular wafer overlap region, Each first radially symmetric gas distribution structure includes a first hub plenum and a plurality of first spoke passages, each extending radially outward from the first hub plenum and terminating at a corresponding first far end. Each second radially symmetric gas distribution structure includes a second hub plenum and a plurality of second spoke passages, each extending radially outward from the second hub plenum and terminating at a corresponding second far end. In the set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, the first far end of each first spoke passage of the first radially symmetric gas distribution structure is located between the second hub plenums of a pair of adjacent second radially symmetric gas distribution structures. In the set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, the second far end of each second spoke passage of the second radially symmetric gas distribution structure is located between a pair of adjacent and different first far ends, The first radially symmetric gas distribution structure defines a plurality of first flow paths within the main body, The second radially symmetric gas distribution structure defines a plurality of second flow paths within the main body, Each first flow path is fluidly connected to one of the first gas distribution holes to one of the one or more first plenum inlets in the main body. Each second flow path fluidly connects one of the second gas distribution holes to one of the one or more second plenum inlets in the main body. Semiconductor processing unit.

2. A semiconductor processing apparatus according to claim 1, A semiconductor processing apparatus wherein, in each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure are separated from the second surface by a common distance within the body.

3. A semiconductor processing apparatus according to claim 2, A semiconductor processing apparatus wherein each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure is separated from the second surface by different distances within the main body.

4. A semiconductor processing apparatus according to claim 3, For each pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, The first spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is closer to the second surface is shorter than the first spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is further from the second surface. The second spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is closer to the second face is shorter than the second spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is further from the second face. Semiconductor processing unit.

5. A semiconductor processing apparatus according to claim 3, For each pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, The first spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is closer to the second face is half the length of the first spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is further from the second face. The second spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is closer to the second face is half the length of the second spoke passage in the pair of adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is further from the second face. Semiconductor processing unit.

6. A semiconductor processing apparatus according to claim 1, Each of the first spoke passages in each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure extends along a corresponding axis that does not intersect with either of the second hub plenums in the set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, Each of the second spoke passages in the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure extends along a corresponding axis that intersects with at least one of the first hub plenums in the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure. Semiconductor processing unit.

7. A semiconductor processing apparatus according to claim 1, In each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, there are four first spoke passages that radiate outward from each of at least some of the first hub plenums of the first radially symmetric gas distribution structure, In each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, there are four second spoke passages that radiate outward from each of at least some of the second hub plenums of the second radially symmetric gas distribution structure. Semiconductor processing unit.

8. A semiconductor processing apparatus according to claim 1, The first gas distribution holes within the cylindrical volume are arranged in a first square pattern having a first pitch distance. The second gas distribution holes within the cylindrical volume are arranged in a second square pattern having a second pitch distance. The first pitch distance is equal to the square root of twice the square of the second pitch distance. Semiconductor processing unit.

9. A semiconductor processing apparatus according to claim 1, The first far end of each of the first spoke passages in the set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, which is closest to the second surface, is connected to the corresponding one of the first gas distribution holes by the corresponding first riser passage. The second far end of each of the second spoke passages in the set of the first and second radially symmetric gas distribution structures, which is closest to the second surface, is connected to the corresponding one of the second gas distribution holes by a corresponding second riser passage. Semiconductor processing unit.

10. A semiconductor processing apparatus according to claim 9, The first far end of each of the first spoke passages in each set of the first radially symmetric gas distribution structures that is not closest to the second face is connected by a corresponding first riser passage to the corresponding one of the first hub plenum in adjacent sets of the first radially symmetric gas distribution structures that is closer to the second face. The second far end of each second spoke passage in each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is not closest to the second face is connected by a corresponding second riser passage to the corresponding one of the second hub plenum in adjacent sets of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure that is closer to the second face. Semiconductor processing unit.

11. A semiconductor processing apparatus according to claim 1, The first radially symmetric gas distribution structure is arranged in the first fractal pattern, The second radially symmetric gas distribution structure is arranged in the second fractal pattern, The first fractal pattern and the second fractal pattern are interlocked. Semiconductor processing unit.

12. A semiconductor processing apparatus according to claim 1, Each of the first hub plenums in each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure is located midway between the two second hub plenums in that set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure. Each of the second hub plenums in each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure is located midway between the two first hub plenums in that set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure. Semiconductor processing unit.

13. A semiconductor processing apparatus according to claim 1, Each of the first spoke passages is aligned with one of the two orthogonal first passage axes, Each of the second spoke passages is aligned with one of the two orthogonal second passage axes, The first passage axis is out of phase with the second passage axis by 45°. Semiconductor processing unit.

14. A semiconductor processing apparatus according to any one of claims 1 to 13, The main body includes multiple layers, In each set of the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure, the first radially symmetric gas distribution structure and the second radially symmetric gas distribution structure are formed in one of the corresponding layers. The aforementioned multiple layers are fused into a laminated structure. Semiconductor processing unit.

15. A semiconductor processing apparatus according to claim 14, The aforementioned plurality of layers are formed of ceramic material, in a semiconductor processing apparatus.

16. A semiconductor processing apparatus according to any one of claims 1 to 13, Processing chamber and It also includes a base, The base is located inside the processing chamber, The shower head is located above the base within the processing chamber. Semiconductor processing unit.

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