Plasma processing equipment

Abstract

To provide a plasma processing device which can be easily made compact even when multiple antennas are installed.SOLUTION: A plasma processing device (1) is equipped with a vacuum container (2) and an antenna part (14). The antenna part (14) includes: a first capacitor (C1a) that has a conductor (14a1), two antennas (14b, 14c) installed in parallel, a conductor-side electrode (C11) and a first antenna electrode (C12a) connected to the antenna (14b); and a second capacitor (C1b) with a conductor-side electrode (C11) and a second antenna electrode (C12b) connected to the antenna (14c).SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus.

Background Art

[0002] A plasma processing apparatus that generates plasma inside a vacuum vessel using an antenna is known. Depending on its type, the plasma processing apparatus performs a predetermined plasma treatment using the generated plasma on an object to be processed.

[0003] Furthermore, among plasma processing apparatuses, one using a branched antenna having a plurality of main branch antennas and a plurality of sub-branch antennas is known.

Prior Art Literature

Patent Literature

[0004]

Patent Literature 1

Summary of the Invention

Problem to be Solved by the Invention

[0005] The plasma processing apparatus disclosed in Patent Literature 1 is provided with a plurality of antennas, but there is room for improvement in achieving size reduction of the plasma processing apparatus.

[0006] The present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide a plasma processing apparatus that can be easily reduced in size even when a plurality of antennas are provided.

Means for Solving the Problem

[0007] To solve the above problems, a plasma processing apparatus according to one aspect of the present disclosure comprises a vacuum vessel for housing an object to be processed, and an antenna section, the antenna section comprising a bar-shaped antenna that generates a high-frequency magnetic field for generating plasma inside the vacuum vessel, a first capacitor comprising two antennas arranged in parallel with each other, a conductor for supplying high-frequency current to both antennas, a first conductor-side electrode connected to the conductor, and an electrode connected to one of the antennas, which is a first antenna electrode connected to the end of the antenna, and a second capacitor comprising a second conductor-side electrode connected to the conductor, and an electrode connected to the other antenna, which is a second antenna electrode connected to the end of the antenna. [Effects of the Invention]

[0008] According to one aspect of this disclosure, it is possible to provide a plasma processing apparatus that can be easily made more compact even when multiple antennas are provided. [Brief explanation of the drawing]

[0009] [Figure 1] This is a cross-sectional view of a plasma processing apparatus according to one embodiment of the present disclosure. [Figure 2] This is a perspective view showing an example of the main components of the plasma source of the plasma processing apparatus described above. [Figure 3] This figure illustrates a cross-sectional view of an example of the main components of the plasma source shown in Figure 1. [Figure 4] This figure illustrates a top view of an example of the main components of the plasma source described above. [Figure 5] This figure illustrates a cross-sectional view of an example of the main components of a plasma source in a plasma processing apparatus according to a modified example of the present disclosure. [Figure 6] This figure illustrates a top view of an example of the main components of the plasma source shown in Figure 5. [Modes for carrying out the invention]

[0010] Hereinafter, one embodiment of the present disclosure will be specifically described with reference to Figure 1. Figure 1 is a cross-sectional view of a plasma processing apparatus 1 according to one embodiment of the present disclosure.

[0011] In the following explanation, a plasma processing apparatus 1 is used as an example to describe a film deposition process in which a predetermined film is deposited on the surface of a workpiece H1 by a sputtering method using a target as the predetermined plasma treatment.

[0012] However, this disclosure can be applied to a plasma processing apparatus that performs a film deposition process, for example, by plasma CVD (Chemical Vapor Deposition) using plasma, to deposit a predetermined film on the surface of a workpiece H1. Furthermore, this disclosure can be applied to a plasma processing apparatus that performs a surface processing process, for example, etching or ashing, using plasma to perform a predetermined processing on the surface of a workpiece H1.

[0013] <Plasma Processing Device 1> As shown in Figure 1, the plasma processing apparatus 1 of this embodiment includes a vacuum vessel 2 that houses the object to be processed H1, and a target holder 3 that is detachably provided to the vacuum vessel 2 and for positioning a target Tr inside the vacuum vessel 2. The plasma processing apparatus 1 of this embodiment also includes a plasma source 10 that generates plasma inside the vacuum vessel 2. The vacuum vessel 2 is configured to house the object to be processed H1 and a stage H on which the object to be processed H1 is placed.

[0014] Furthermore, in the vacuum vessel 2, the workpiece H1 and the stage H are transported in and out of the vacuum vessel 2 and the outside by a transport device (not shown). The plasma source 10 is a source of an electromagnetic field for generating plasma inside the vacuum vessel 2. In Figure 2, the direction in which the workpiece H1 and the target Tr face each other is vertical, and the target Tr is provided, for example, on the upper ceiling surface of the vacuum vessel 2.

[0015] Inside the vacuum container 2, while maintaining a predetermined degree of vacuum, a film forming process is performed on the workpiece H1, in which plasma is used to sputter the target Tr to form a coating film on the workpiece H1. The workpiece H1 can be, for example, a glass substrate or a synthetic resin substrate used for liquid crystal panel displays, organic EL (Electro Luminescence) panel displays, and the like. The workpiece H1 can also be a semiconductor substrate used for various applications. The plasma processing apparatus 1 forms a predetermined coating film such as an oxide semiconductor or a magnetic material on the workpiece H1 by the above film forming process.

[0016] Further, a gas supply mechanism (not shown) is connected to the vacuum container 2, and an inert gas such as argon gas is supplied into the vacuum container 2 by the gas supply mechanism. The plasma processing apparatus 1 is configured such that the film forming process is performed in an inert gas atmosphere.

[0017] <Target holder 3> The target holder 3 includes a backing plate 6 that cools the target Tr. The backing plate 6 is configured to appropriately hold the target Tr in accordance with the film forming process.

[0018] The backing plate 6 includes, for example, an inflow port 6a and an outflow port 6b through which a cooling medium such as cooling water respectively flows in and out, and a flow path 6c communicating with the inflow port 6a and the outflow port 6b. The target Tr is bonded, for example, to the lower surface of the backing plate 6.

[0019] The target holder 3 holds the target Tr such that, during the film forming process, the main surface of the target Tr faces and is parallel to the coating film formation surface of the workpiece H1 placed on the stage H. In addition, in order to prevent abnormal discharge at the end portion of the target Tr, the target holder 3 is provided with a ground electrode (anode electrode) that covers the surface of the target Tr via a gap (not shown). This ground electrode is electrically connected to the vacuum container 2 and is grounded via the vacuum container 2.

[0020] A power source 8 is connected to the target Tr via a backing plate 6, and a pulsed DC voltage or an AC voltage is applied from the power source 8 as a bias voltage to the target Tr during the film formation process. This bias voltage causes ions in the plasma inside the vacuum vessel 2 (for example, argon ions (Ar + )) to be drawn into the target Tr for sputtering, and is set to a value within the range of, for example, -200V to -1kV.

[0021] <Plasma source 10> The plasma source 10 includes an antenna unit 14 disposed outside the vacuum vessel 2. The antenna unit 14 is a bar-shaped antenna that generates a high-frequency magnetic field for generating plasma inside the vacuum vessel 2, and includes two antennas 14b and 14c provided in parallel with each other. The plasma source 10 is also attached to the vacuum vessel 2 and includes a housing case 12 that accommodates the two antennas 14b and 14c. Specifically, the housing case 12 includes a metal flange portion 12F and is attached to the vacuum vessel 2 via the metal flange portion 12F. The plasma source 10 also includes a high-frequency window 11 that introduces the high-frequency magnetic field into the interior of the vacuum vessel 2.

[0022] <Example of main configuration of plasma source 10> An example of the main configuration of the plasma processing apparatus 1 according to the present embodiment will be specifically described with reference to FIGS. 2 to 4. FIG. 2 is a perspective view showing an example of the main configuration of the plasma source 10. FIG. 3 is a diagram illustrating a cross-sectional view of the example of the main configuration of the plasma source 10 shown in FIG. 1. FIG. 4 is a diagram illustrating a top view of the example of the main configuration of the plasma source 10. In FIGS. 2 to 4, illustration of the metal flange portion 12F is omitted for simplification of the drawings. In FIG. 2, illustration of the dielectric plate 13 provided on the high-frequency window 11 is also omitted for simplification of the drawing.

[0023] <Housing case 12> As shown in Figure 2, the storage case 12 is configured as a box-shaped body with an opening at the top. The storage case 12 has metal plates 12a1, 12a2, 12a3, 12b, and 12c. These metal plates 12a1, 12a2, 12a3, 12b, and 12c are made of one metal selected from the group including, for example, copper, aluminum, zinc, nickel, tin, silicon, titanium, iron, chromium, niobium, carbon, molybdenum, tungsten, or cobalt, or an alloy thereof.

[0024] The metal plates 12a1, 12a2, and 12a3 are, for example, integrally constructed. In other words, the metal plates 12a1, 12a2, and 12a3 are constructed by bending a single metal plate into a U-shape in cross-section. The metal plates 12a1 and 12a2 each form two opposing sides of the housing case 12. The metal flange portion 12F is integrally connected to the metal plates 12a1 and 12a2. The metal plate 12a3 is provided continuously with the metal plates 12a1 and 12a2, i.e., the two aforementioned sides, and forms the bottom surface of the housing case 12.

[0025] The metal plates 12b and 12c are fixed to the metal plates 12a1, 12a2, and 12a3 at one and the other longitudinal end of the two linear antennas 14b and 14c of the antenna section 14. In other words, the metal plate 12b forms a wall portion of the housing case 12 that closes off the space surrounded by the metal plates 12a1, 12a2, and 12a3 at one longitudinal end. The metal plate 12b also forms a wall portion of the housing case 12 that closes off the space surrounded by the metal plates 12a1, 12a2, and 12a3 at the other longitudinal end. Thus, the housing case 12 is constructed in a box shape with the aforementioned opening by the metal plates 12a1, 12a2, 12a3, 12b, and 12c.

[0026] Multiple slits 12s are provided in the metal plates 12a1 and 12a2 at predetermined intervals from each other along the longitudinal direction. The two antennas 14b and 14c are positioned within the housing case 12 so as to face the slits 12s.

[0027] <High-frequency window 11> As shown in Figures 3 and 4, the high-frequency window 11 consists of metal plates 12a1 and 12a2 that constitute part of the housing case 12, and each metal plate 12a1 and 12a2 has a slit 12s. The high-frequency window 11 also has a dielectric plate 13 superimposed on the metal plates 12a1, 12a2, and 12a3 so as to close the slit 12s. In other words, the housing case 12 also functions as a dielectric support part that contacts and supports the dielectric plate 13. Furthermore, the high-frequency window 11 introduces high-frequency magnetic fields from the two antennas 14b and 14c housed in the housing case 12 into the vacuum container 2.

[0028] <Dielectric plate 13> The dielectric plate 13 is made of a synthetic resin film, such as fluororesin. Furthermore, when the slit 12s is closed, the dielectric plate 13 is designed to allow high-frequency magnetic fields from the two antennas 14b and 14c to pass through to the inside of the vacuum container 2 while maintaining the vacuum state inside the vacuum container 2.

[0029] In addition to the above explanation, the dielectric plate 13 may be made of any permeable material, such as ceramic materials like alumina, silicon carbide, or silicon nitride, or inorganic materials like quartz glass or alkali-free glass.

[0030] Furthermore, the housing case 12 is airtightly attached to the wall surface of the vacuum vessel 2 via the metal flange portion 12F. As a result, the housing case 12 is grounded through the vacuum vessel 2. In addition, slits 12s are provided in the metal plates 12a1 and 12a2 of the housing case 12. As a result, the housing case 12, in conjunction with the grounding point, is configured to allow the high-frequency magnetic field generated by the antenna portion 14 to pass through to the inside of the vacuum vessel 2, while preventing the electric field generated by the antenna portion 14 from entering the inside of the vacuum vessel 2.

[0031] <Antenna section 14> As shown in Figure 2, the antenna section 14 comprises a pair of conductors 14a1 and 14a2, two antennas 14b and 14c, a first capacitor section C1, and a second capacitor section C2. Conductor 14a1 is connected to one longitudinal end of antenna 14b and one longitudinal end of antenna 14c via the first capacitor section C1. Conductor 14a2 is connected to the other longitudinal end of antenna 14b and the other longitudinal end of antenna 14c via the second capacitor section C2.

[0032] The antenna section 14 is equipped with a chiller for circulating a predetermined cooling medium, such as cooling water W (Figure 3). Specifically, the chiller 9 includes a drive unit such as a pump (not shown), and comprises a chiller body 9a for circulating the cooling water W, a pipe 9b connected to the chiller body 9a and the conductor 14a1, and a pipe 9c connected to the chiller body 9a and the conductor 14a2. The chiller body 9a is configured to cool each part of the antenna section 14 to a predetermined temperature by sequentially circulating the cooling water W through the inside of the pipe 9b, the inside of the conductor 14a1, the inside of the first capacitor section C1, the insides of the antennas 14b and 14c, the inside of the second capacitor section C2, the inside of the conductor 14a2, and the inside of the pipe 9c.

[0033] The first capacitor section C1 and the second capacitor section C2 are provided on the metal plates 12b and 12c sides, respectively, and have the same structure. Specifically, as shown in Figures 3 and 4, for example, the first capacitor section C1 has a first capacitor C1a comprising a conductor-side electrode C11 connected to a conductor 14a1, and a first antenna electrode C12a connected to one antenna 14b and connected to the end of the antenna 14b via a cylindrical connecting member C13a. The first capacitor section C1 also has a second capacitor C1b comprising a conductor-side electrode C11 connected to a conductor 14a1, and a second antenna electrode C12b connected to the other antenna 14c and connected to the end of the antenna 14c via a cylindrical connecting member C13b.

[0034] In addition to the above explanation, it is also possible to configure the antennas 14b and 14c by directly connecting the ends of the antennas 14b and 14c to the first antenna electrode C12a and the second antenna electrode C12b, without providing the connecting members C13a and C13b.

[0035] The conductor-side electrode C11, the first antenna electrode C12a, and the second antenna electrode C12b are cylindrical in shape and made of a metal material such as copper, aluminum, an alloy thereof, or stainless steel. The conductor-side electrode C11 has an opening at the connection point with the conductor 14a1, allowing cooling water W, which serves as a cooling medium, to flow through the opening and between it and the conductor 14a1. The length dimension of the capacitor in the first capacitor C1a is the length dimension of the first antenna electrode C12a facing the conductor-side electrode C11, indicated by "L1" in Figure 3. The length dimension of the capacitor in the second capacitor C1b is the length dimension of the second antenna electrode C12b facing the conductor-side electrode C11, indicated by "L2" in Figure 3.

[0036] In the first capacitor C1a, cooling water W is configured to flow through the gap between the conductor-side electrode C11 and the first antenna electrode C12a. The first capacitor C1a uses the cooling water W present in the gap between the conductor-side electrode C11 and the first antenna electrode C12a to form its dielectric layer. Similarly, in the second capacitor C1b, cooling water W is configured to flow through the gap between the conductor-side electrode C11 and the second antenna electrode C12b. The second capacitor C1b uses the cooling water W present in the gap between the conductor-side electrode C11 and the second antenna electrode C12b to form its dielectric layer.

[0037] In addition to the above description, insulating layers made of cylindrical dielectric material may be installed in the space between the conductor-side electrode C11 and the first antenna electrode C12a and in the space between the conductor-side electrode C11 and the second antenna electrode C12b to constitute the dielectric layers of the first capacitor C1a and the second capacitor C1b.

[0038] However, as described above, it is preferable to use cooling water W to construct the dielectric layers of the first capacitor C1a and the second capacitor C1b in order to construct the plasma processing apparatus 1 at a lower cost compared to the case in which the dielectric layers are provided separately.

[0039] In the above description, the case in which the first capacitor C1a and the second capacitor C1b use an integrally configured conductor-side electrode C11 was described. However, the disclosure is not limited thereto, and the first capacitor C1a and the second capacitor C1b may also be configured to have a first conductor-side electrode and a second conductor-side electrode, respectively, connected to the conductor 14a1.

[0040] However, as described above, using a conductor-side electrode C11 that is integrally formed in the first capacitor C1a and the second capacitor C1b allows for a simpler configuration of the first capacitor C1a and the second capacitor C1b, and thus the plasma processing apparatus 1 can be constructed at a lower cost.

[0041] The conductors 14a1 and 14a2 are cylindrical in shape and made of a metal material such as copper, aluminum, or an alloy thereof, or stainless steel. Similarly, the antennas 14b and 14c are cylindrical in shape and made of a metal material such as copper, aluminum, or an alloy thereof, or stainless steel. These antennas 14b and 14c are positioned inside the housing case 12 facing the high-frequency window 11. As a result, in the plasma processing apparatus 1 of this embodiment, a high-frequency magnetic field from the antenna section 14 can be reliably generated inside the vacuum container 2 via the high-frequency window 11.

[0042] Furthermore, conductors 14a1 and 14a2 supply high-frequency current to antennas 14b and 14c. Antennas 14b and 14c are bar-shaped antennas that generate a high-frequency magnetic field for generating plasma inside the vacuum vessel 2, and are arranged in parallel with each other. Specifically, conductor 14a1 is connected to a high-frequency power supply 15, and conductor 14a2 is grounded. In the antenna section 14, a high-frequency current with a frequency of, for example, 13.56 MHz is supplied from the high-frequency power supply 15 to antennas 14b and 14c. In the plasma processing apparatus 1, the flow of high-frequency current through antennas 14b and 14c generates an induced electric field inside the vacuum vessel 2, thereby generating an inductively coupled plasma.

[0043] As shown in Figures 3 and 4, the antenna section 14 is located inside the housing case 12 and includes an insulating case K1 that holds the first capacitor C1a and the second capacitor C1b. The insulating case K1 comprises a lid K1a, a main body K1b, and side sections K1c and K1d. The insulating case K1 is made of a synthetic resin such as polyphenylene sulfide, or a ceramic such as alumina.

[0044] A conductor 14a1 is airtightly attached to the lid K1a. The main body K1b has the parts of the first capacitor C1a, the parts of the second capacitor C1b, and connecting members C13a and 13b attached to it. The side part K1c is attached to one end of the lid K1a and the main body K1b so as to fix one end of the lid K1a and the main body K1b. An antenna 14b is airtightly attached to the side part K1c. The side part K1d is attached to the other end of the lid K1a and the main body K1b so as to fix the other end of the lid K1a and the main body K1b. An antenna 14c is airtightly attached to the side part K1d.

[0045] The insulating case K1 is provided with gaskets g1 and g2, which serve as adjustment members that allow adjustment of the distance between the two antennas 14b and 14c. Specifically, as shown in Figure 3, gasket g1 is provided between the side portion K1c and the lid portion K1a and the main body portion K1b, and gasket g2 is provided between the side portion K1d and the lid portion K1a and the main body portion K1b. By adjusting the thickness of these gaskets g1 and g2, the distance between the workpiece H1 and the two antennas 14b and 14c can be easily changed in the plasma processing apparatus 1 of this embodiment. This makes it possible to change the density of plasma from each antenna 14b and 14c to the workpiece H1.

[0046] Furthermore, in the insulating case K1, as shown in Figure 3, the antennas 14b and 14c are attached to the insulating case K1 such that the conductor 14a1 and antennas 14b and 14c have the following opening angle θ relative to the conductor 14a1.

[0047] Specifically, the opening angle θ between the first direction (shown by the dashed line S1 in Figure 3) from the connection point of the conductor side electrode C11 of the conductor 14a1 to the connection point of the first antenna electrode C12a of one of the two antennas 14b, and the second direction (shown by the dashed line S2 in Figure 3) from the connection point of the conductor side electrode C11 of the conductor 14a1 to the connection point of the second antenna electrode C12b of the other antenna 14c, is within the range of 60° to 180°, and the first and second directions are either on the horizontal plane (the plane shown by the double arrow HS in Figure 3) or downward from the horizontal plane. As a result, the plasma processing apparatus 1 of this embodiment can appropriately apply plasma from the two antennas 14b and 14c to the workpiece H1.

[0048] Furthermore, if the opening angle θ is set to an angle less than 60°, the first capacitor C1a, the second capacitor C1b, and the antennas 14b and 14c will come into close proximity to the metal flange portion 12F, resulting in current loss due to induced current, which may prevent the plasma from being properly generated inside the vacuum vessel 2. Similarly, if the opening angle θ is set to an angle greater than 180°, the plasma may not be properly generated inside the vacuum vessel 2 for the same reason.

[0049] The plasma processing apparatus 1 of this embodiment, configured as described above, comprises a vacuum vessel 2 for housing the object to be processed H1 inside, and an antenna section 14. The antenna section 14 comprises a pair of conductors 14a1 and 14a2, and two antennas 14b and 14c arranged in parallel with each other and generating a high-frequency magnetic field for generating plasma inside the vacuum vessel 2. The antenna section 14 comprises a first capacitor C1a having a conductor-side electrode C11 connected to conductor 14a1 or 14a2 and a first antenna electrode C12a connected to antenna 14b, and a second capacitor C1b having a conductor-side electrode C11 connected to conductor 14a1 or 14a2 and a second antenna electrode C12b connected to antenna 14c.

[0050] With the above configuration, the plasma processing apparatus 1 of this embodiment can reduce the potential of antennas 14b and 14c using the first capacitor C1a and the second capacitor C1b, respectively. As a result, the plasma processing apparatus 1 of this embodiment can reduce the distance between antennas 14b and 14c and the housing case 12. Consequently, even when multiple antennas are provided to accommodate larger workpieces H1, the plasma processing apparatus 1 can be easily made more compact. Furthermore, the plasma processing apparatus 1 of this embodiment can reduce the impedance of antennas 14b and 14c, thereby suppressing discharge to grounded points such as the vacuum vessel 2.

[0051] Furthermore, in the plasma processing apparatus 1 of this embodiment, a pair of conductors 14a1 and 14a2 are branched to antennas 14b and 14c via a first capacitor section C1 and a second capacitor section C2, respectively. Therefore, compared to the case where branching is performed using a metal joint, for example, the plasma processing apparatus 1 of this embodiment can suppress the enlargement of the branching point and can easily suppress short circuits to the vacuum vessel 2. In addition, in this embodiment, the branching point is constructed by attaching the conductor 14a1 or 14a2 and antennas 14b and 14c to the insulating case K1, so the plasma processing apparatus 1 can be constructed at a lower cost compared to the case where the branching point is constructed by welding.

[0052] Furthermore, in the plasma processing apparatus 1 of this embodiment, the antenna unit 14 is located outside the vacuum vessel 2, so plasma processing can be performed while suppressing an increase in the size of the vacuum vessel 2.

[0053] Furthermore, in the plasma processing apparatus 1 of this embodiment, an insulating case K1 holding the first capacitor C1a and the second capacitor C1b is arranged inside the housing case 12. The conductor 14a1 or 14a2 and the antennas 14b and 14c are supported by the housing case 12 via the insulating case K1 by being attached to the insulating case K1. As a result, in the plasma processing apparatus 1 of this embodiment, the positions of the antennas 14b and 14c can be easily controlled by adjusting the position of the insulating case K1 within the housing case 12.

[0054] Furthermore, the plasma processing apparatus 1 of this embodiment includes a pair of conductors 14a1 and 14a2, and a first capacitor C1a and a second capacitor C1b configured for each of the conductors 14a1 and 14a2. This makes it easy to lengthen the antennas 14b and 14c in this embodiment, and thus easily improve the processing capacity of the plasma processing apparatus 1.

[0055] Furthermore, the plasma processing apparatus 1 of this embodiment is equipped with a chiller 9 for cooling each part of the antenna section 14. As a result, in this embodiment, each part of the antenna section 14 can be properly cooled, and the plasma processing apparatus 1 can operate more effectively.

[0056] [Variation] Modifications of the present disclosure will be specifically described with reference to Figures 5 and 6. Figure 5 is a diagram illustrating a cross-sectional view of an example of the main components of the plasma source 10 of the plasma processing apparatus 1 according to a modification of the present disclosure. Figure 6 is a diagram illustrating a top view of the example of the main components of the plasma source 10 shown in Figure 5. For the sake of convenience of explanation, components having the same function as those described in the above embodiments will be denoted by the same reference numerals, and their descriptions will not be repeated.

[0057] The main difference between this modified example and the above embodiment is that the electrode structures of the first capacitor C1a and the second capacitor C1b in the first capacitor section C1 and the second capacitor section C2 have been changed.

[0058] As shown in Figures 5 and 6, in this modified example, the conductor-side electrode connected to the conductor 14a1 comprises a cylindrical conductor-side electrode body C11a and ring-shaped electrode portions C11b and C11c fixed to one end and the other end of the conductor-side electrode body C11a, respectively.

[0059] Furthermore, the first antenna electrode connected to the antenna 14b comprises a cylindrical first antenna electrode body C12a1 and an electrode portion C12a2 fixed to the first antenna electrode body C12a1 so as to face the electrode portion C11b.

[0060] Furthermore, the second antenna electrode connected to antenna 14c comprises a cylindrical second antenna electrode body C12b1 and an electrode portion C12b2 fixed to the second antenna electrode body C12b1 so as to face the electrode portion C11c.

[0061] In the first capacitor C1a, the cooling water W present in the space between electrode portion C11b and electrode portion C12a2 functions as the dielectric layer of the first capacitor C1a. Similarly, in the second capacitor C1b, the cooling water W present in the space between electrode portion C11c and electrode portion C12b2 functions as the dielectric layer of the second capacitor C1b.

[0062] With the above configuration, the plasma processing apparatus 1 of this modified example achieves the same effects as that of the above embodiment.

[0063] In the above description, a configuration having an antenna unit 14 located outside the vacuum vessel 2 was described. However, this disclosure is not limited to this, and a configuration in which the antenna unit 14 is located inside the vacuum vessel 2 is also possible.

[0064] 〔summary〕 To solve the above problems, a plasma processing apparatus according to a first aspect of the present disclosure comprises a vacuum vessel for housing an object to be processed, and an antenna section, the antenna section comprising a bar-shaped antenna for generating a high-frequency magnetic field for generating plasma inside the vacuum vessel, a first capacitor comprising two antennas arranged in parallel with each other, a conductor for supplying high-frequency current to both antennas, a first conductor-side electrode connected to the conductor, and an electrode connected to one of the antennas, which is a first antenna electrode connected to the end of the antenna, and a second capacitor comprising a second conductor-side electrode connected to the conductor, and an electrode connected to the other antenna, which is a second antenna electrode connected to the end of the antenna.

[0065] According to the above configuration, it is possible to provide a plasma processing apparatus that can be easily made more compact, even when multiple antennas are provided.

[0066] In the plasma processing apparatus of the second embodiment, the antenna portion may be located outside the vacuum vessel, in the plasma processing apparatus of the first embodiment.

[0067] With the above configuration, plasma processing can be performed while suppressing an increase in the size of the vacuum vessel.

[0068] A plasma processing apparatus in a third embodiment may be an insulating case in which the first capacitor and the second capacitor are held, the insulating case on which the two antennas are attached, and a housing case for housing the two antennas, which may be attached to the vacuum vessel.

[0069] With the above configuration, the position of the antenna can be easily controlled by adjusting the position of the insulating case within the housing case.

[0070] A plasma processing apparatus of the fourth embodiment may be provided with a high-frequency window for introducing the high-frequency magnetic field into the vacuum vessel, which is part of the plasma processing apparatus of the third embodiment and includes a metal plate with a slit and a dielectric plate superimposed on the metal plate so as to close the slit.

[0071] With the above configuration, high-frequency magnetic fields from each of the two antennas can be reliably generated inside the vacuum container through the high-frequency window.

[0072] In the fifth embodiment of the plasma processing apparatus, in the third or fourth embodiment, the insulating case may be provided with an adjustment member capable of adjusting the distance between the two antennas.

[0073] With the above configuration, the distance between the two antennas and the object being processed can be easily changed by changing the length of at least one of the first or second capacitors.

[0074] The plasma processing apparatus of the sixth embodiment is a plasma processing apparatus of any embodiment from the third to fifth embodiment, wherein the opening angle between a first direction from the connection point of the conductor with the first conductor-side electrode toward the connection point of one of the two antennas with the first antenna electrode, and a second direction from the connection point of the conductor with the second conductor-side electrode toward the connection point of the other of the two antennas with the second antenna electrode, is in the range of 60° to 180°, and the first direction and the second direction may be in a horizontal plane or downward from the horizontal plane.

[0075] With the above configuration, plasma from each of the two antennas can be appropriately applied to the object to be processed.

[0076] The plasma processing apparatus of the seventh embodiment is a plasma processing apparatus of any of the first to sixth embodiments, wherein the antenna portion comprises a pair of conductors, and further comprises a first capacitor and a second capacitor configured for each of the conductors.

[0077] According to the above configuration, the length of the antenna can be easily increased, and the processing capacity of the plasma processing apparatus can be easily improved.

[0078] The plasma processing apparatus of the eighth embodiment is the plasma processing apparatus of the seventh embodiment, wherein the conductor and the antenna are cylindrical in shape so that a cooling medium flows inside them, and the cooling medium may be configured to flow in the gap between the first conductor-side electrode and the first antenna electrode of the first capacitor, and in the gap between the second conductor-side electrode and the second antenna electrode of the second capacitor.

[0079] With the above configuration, each part of the antenna can be cooled, allowing the plasma processing device to operate more effectively.

[0080] In the plasma processing apparatus of the ninth embodiment, the cooling medium may constitute the dielectric layer of the capacitor, as in the plasma processing apparatus of the eighth embodiment.

[0081] According to the above configuration, a plasma processing apparatus can be constructed at a lower cost compared to the case where a dielectric layer is provided separately.

[0082] In the plasma processing apparatus of the tenth embodiment, the first conductor-side electrode and the second conductor-side electrode may be integrally configured as a conductor-side electrode in the plasma processing apparatus of any of the first to ninth embodiments.

[0083] According to the above configuration, the configurations of the first and second capacitors can be simplified, and a plasma processing apparatus can be constructed at a low cost.

[0084] This disclosure is not limited to the embodiments described above, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in the embodiments are also included in the technical scope of this disclosure. [Explanation of Symbols]

[0085] 1. Plasma processing equipment 2 Vacuum container 9 Chiller 11 High-frequency window 12 storage cases 12a1, 12a2, 12a3 metal plate 12s slit 13 Dielectric plate 14 Antenna section 14a1, 14a2 conductors 14b, 14c antennas C1a First capacitor C2a Second capacitor C11, C11a, C11b, C11c Conductor-side electrodes (first conductor-side electrode, second conductor-side electrode) C12a, C12a1, C12a2: First antenna electrodes C12b, C12b1, C12b2: Second antenna electrodes K1 Insulator Case W Cooling water (cooling medium, dielectric layer) S1 1st direction S2 2nd direction θ Opening angle

Claims

1. A vacuum container that houses the object to be processed, It includes an antenna section, The aforementioned antenna section is A bar-shaped antenna for generating a high-frequency magnetic field to generate plasma inside the vacuum vessel, comprising two antennas arranged in parallel with each other, A conductor that supplies high-frequency current to both of the aforementioned antennas, A plasma processing apparatus comprising: a first capacitor comprising a first conductor-side electrode connected to the conductor and an electrode connected to one of the antennas, the first antenna electrode connected to the end of the antenna; and a second capacitor comprising a second conductor-side electrode connected to the conductor and an electrode connected to the other antenna, the second antenna electrode connected to the end of the antenna.

2. The plasma apparatus according to claim 1, wherein the antenna is located outside the vacuum vessel.

3. The plasma apparatus according to claim 2, wherein an insulating case holding the first capacitor and the second capacitor, the insulating case on which the two antennas are attached, and a housing case for housing the two antennas are attached to the vacuum vessel.

4. The plasma apparatus according to claim 3, wherein a high-frequency window is provided for introducing the high-frequency magnetic field into the vacuum container, the window comprising a metal plate having a slit and a dielectric plate superimposed on the metal plate so as to close the slit, which constitute a part of the housing case.

5. The plasma processing apparatus according to claim 3, wherein the insulating case is provided with an adjustment member capable of adjusting the distance between the two antennas.

6. The plasma processing apparatus according to claim 1, wherein the opening angle between a first direction, which extends from the connection point of the conductor with the first conductor-side electrode to the connection point of one of the two antennas with the first antenna electrode, and a second direction, which extends from the connection point of the conductor with the second conductor-side electrode to the connection point of the other of the two antennas with the second antenna electrode, is in the range of 60° to 180°, and the first direction and the second direction are in a horizontal plane or downward from the horizontal plane.

7. The aforementioned antenna section is The aforementioned conductors are provided in a pair, Furthermore, the plasma processing apparatus according to any one of claims 1 to 6 further comprises the first capacitor and the second capacitor configured for each of the conductors.

8. The plasma processing apparatus according to claim 7, wherein the conductor and the antenna are cylindrical in shape so that a cooling medium flows through them, and the cooling medium is configured to flow through the gap between the first conductor-side electrode and the first antenna electrode in the first capacitor, and the gap between the second conductor-side electrode and the second antenna electrode in the second capacitor.

9. The plasma processing apparatus according to claim 8, wherein the cooling medium constitutes the dielectric layer of the capacitor.

10. The plasma processing apparatus according to claim 1, wherein the first conductor-side electrode and the second conductor-side electrode are integrally configured as a conductor-side electrode.

Images