Semiconductor wafer temperature control device and semiconductor wafer temperature control method

Abstract

To respond quickly even when there is local heat input to a mounting surface on which a semiconductor wafer is mounted.SOLUTION: A semiconductor wafer temperature control device includes a mounting portion that has a mounting surface on which a semiconductor wafer is mounted, and has a plurality of areas obtained by partitioning the mounting surface in plan view, a temperature adjustment portion that independently adjusts the temperature of the mounting portion for each of the plurality of areas, a temperature detection portion that is provided in at least one of the plurality of areas and detects the temperature of the area whose temperature is adjusted by the temperature adjustment portion, and a control portion that monitors temperatures detected by the plurality of temperature detection portions, selects a temperature having a large temperature change per unit time from among the plurality of monitored temperatures, and controls the temperature adjustment portion on the basis of the selected detected temperature.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a semiconductor wafer temperature control apparatus and a semiconductor wafer temperature control method. [Background Art]

[0002] As a temperature control apparatus for a semiconductor wafer, for example, Patent Document 1 below discloses an apparatus for controlling the temperature of a semiconductor wafer to a target temperature and controlling the in-plane temperature distribution of the semiconductor wafer. The temperature control apparatus includes a stage having a plurality of concentrically divided zones in plan view, a plurality of temperature adjustment means provided in each zone, and a temperature sensor provided in each zone. Only one temperature sensor is provided in each zone. On the other hand, Patent Document 2 below discloses a prober that inspects electrical characteristics by energizing chips formed on a semiconductor wafer. The prober includes a wafer mounting table for holding a semiconductor wafer, probes formed in alignment with electrode positions of the chips, and a temperature control apparatus. The temperature control apparatus includes a heating mechanism that heats the wafer mounting table and a cooling mechanism that cools the wafer mounting table. The cooling mechanism includes a mounting table cooling line or the like that circulates a coolant through the wafer mounting table. [Prior Art Documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Unexamined Patent Application Publication No. 2017-167813 [Patent Document 2] Japanese Unexamined Patent Application Publication No. 2016-192485 [Brief Summary of the Invention] [Problem to be Solved by the Invention]

[0004] In Patent Document 1, since only one temperature sensor is provided in each zone of the stage, when there is local heat input in the zone, if the temperature sensor is arranged far away from the heat input position, it takes time to detect the temperature change, which may result in poor response. In Patent Document 2, temperature control is achieved by circulating a coolant, which may result in poor response to changes in the set temperature.

[0005] Therefore, the present invention aims to provide a semiconductor wafer temperature control device and a semiconductor wafer temperature control method that can respond quickly even when there is localized heat input on the mounting surface on which the semiconductor wafer is placed. [Means for solving the problem]

[0006] A semiconductor wafer temperature control device according to one aspect of the present invention comprises: a mounting unit having a mounting surface on which a semiconductor wafer is placed, the mounting surface having a plurality of regions partitioned from each other in a plan view; a temperature adjustment unit that independently adjusts the temperature of the mounting unit for each of the plurality of regions; a plurality of temperature detection units provided in at least one of the plurality of regions for detecting the temperature of the region whose temperature has been adjusted by the temperature adjustment unit; and a control unit that monitors the temperatures detected by the plurality of temperature detection units, selects the temperature with the largest temperature change per unit time from among the monitored plurality of detected temperatures, and controls the temperature adjustment unit based on the selected detected temperature.

[0007] A semiconductor wafer temperature control method according to one aspect of the present invention involves monitoring the temperature at multiple locations in at least one of a plurality of regions that are mutually partitioned in a plan view, placing the semiconductor wafer on a mounting surface having the plurality of regions, selecting the temperature at the monitored multiple locations that shows the largest temperature change per unit time, and adjusting the temperature of the region based on the selected temperature. [Effects of the Invention]

[0008] According to the above embodiment, even if there is localized heat input on the mounting surface on which the semiconductor wafer is placed, it is possible to respond quickly. [Brief explanation of the drawing]

[0009] [Figure 1] Block diagram of the temperature control device of the embodiment. [Figure 2]A plan view showing the arrangement of the temperature detection unit in the embodiment. [Figure 3] Section III-III in Figure 2. [Figure 4] A flowchart of the temperature control method according to the embodiment. [Figure 5] A diagram illustrating the temperature changes of multiple detection temperatures in the embodiment. [Figure 6] A plan view illustrating an example of temperature control in an embodiment. [Figure 7] A plan view illustrating an example of temperature control in a first modified embodiment. [Figure 8] A plan view illustrating an example of temperature control in a second modified embodiment. [Modes for carrying out the invention]

[0010] Embodiments of the present invention will be described below with reference to the drawings. In the embodiments, as an example of a semiconductor wafer temperature control device, a temperature control device for controlling the temperature of a semiconductor wafer having a chip whose electrical characteristics are tested by energization (the temperature of a semiconductor wafer that has been locally heated by energization) to a target temperature will be described. For example, the semiconductor wafer is formed in the shape of a disc.

[0011] <Temperature control device> Figure 1 is a block diagram of the temperature control device 1. Figure 2 is a plan view showing the arrangement of the temperature detection unit 4. In Figure 2, the semiconductor wafer W is shown with a dashed line, and the temperature detection unit 4 is shown with a solid line. As shown in Figure 1, the temperature control device 1 comprises a mounting unit 2, a temperature adjustment unit 3, a temperature detection unit 4 (see Figure 2), and a control unit 5. Each element of the temperature control device 1 is controlled by the control unit 5.

[0012] <Mounting section> The mounting portion 2 has a mounting surface 10 on which a semiconductor wafer W is mounted. The mounting portion 2 is formed in a disc shape having the mounting surface 10 on a first surface 11 thereof. As shown in FIG. 2, the mounting surface 10 is formed in a circular shape in a plan view. For example, an outer diameter of the mounting surface 10 is set to a size equal to or larger than an outer diameter of the semiconductor wafer W. The mounting surface 10 has a plurality of (for example, five in the present embodiment) regions 20 to 24 partitioned from each other in a plan view.

[0013] The plurality of regions 20 to 24 include a central region 20 provided at the center of the mounting surface 10 in a plan view, and a plurality of (for example, four in the present embodiment) outer regions 21 to 24 provided radially outward of the central region 20 in a plan view.

[0014] The central region 20 is formed in a perfect circular shape (circular shape) in a plan view. For example, when the semiconductor wafer W is mounted on the mounting surface 10, the central region 20 overlaps a central portion of the semiconductor wafer W in a plan view.

[0015] For example, when the semiconductor wafer W is mounted on the mounting surface 10, the four outer regions 21 to 24 overlap an outer peripheral portion of the semiconductor wafer W in a plan view. The four outer regions 21 to 24 are partitioned from each other in a circumferential direction. Each of the outer regions 21 to 24 is formed in an arc shape in a plan view. Each of the outer regions 21 to 24 has a shape obtained by equally dividing an annular region surrounding the central region 20 in a plan view into four parts in the circumferential direction. That is, the four outer regions 21 to 24 have the same shape as each other in a plan view. The four outer regions 21 to 24 are a first outer region 21, a second outer region 22, a third outer region 23, and a fourth outer region 24. The first outer region 21, the second outer region 22, the third outer region 23, and the fourth outer region 24 are sequentially arranged counterclockwise around the central region 20 in a plan view.

[0016] FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2. As shown in Figure 3, the mounting portion 2 has a recess 13 opening on the second surface 12 opposite to the first surface 11. The recess 13 does not open to the first surface 11 (mounting surface 10). A plurality of recesses 13 are provided in each of the plurality of regions 20 to 24 (see Figure 2). For example, among the plurality of recesses 13, four are provided in the central region 20, and three are provided in each of the outer regions 21 to 24.

[0017] <Temperature adjusting unit> The temperature adjusting unit 3 independently adjusts the temperature of the mounting portion 2 for each of the plurality of regions 20 to 24. For example, the temperature adjusting unit 3 includes a thermoelectric element 30 such as a Peltier element. For example, the thermoelectric element 30 is provided in each of the plurality of regions 20 to 24. For example, when power is supplied to the plurality of thermoelectric elements 30, each of the regions 20 to 24 can be independently heated and cooled. The thermoelectric element 30 in each of the regions 20 to 24 is controlled by the control unit 5 (see Figure 1).

[0018] The temperature adjusting unit 3 is provided on the second surface 12 of the mounting portion 2. The temperature adjusting unit 3 has a through hole 31 connected to the recess 13. A plurality of through holes 31 are provided corresponding to the recesses 13. For example, among the plurality of through holes 31, four are provided in the central region 20, and three are provided in each of the outer regions 21 to 24.

[0019] A cooling unit 35 for cooling the temperature adjusting unit 3 is provided on a surface of the temperature adjusting unit 3 opposite to the surface facing the mounting portion 2. For example, the cooling unit 35 is a water-cooled plate. For example, the water-cooled plate has a cooling passage 36 through which cooling water can flow. For example, the cooling passage 36 is provided in each of the plurality of regions 20 to 24. For example, by driving a pump (not shown) to flow cooling water through each cooling passage 36, each of the regions 20 to 24 can be independently cooled. The pump corresponding to each of the regions 20 to 24 is controlled by the control unit 5 (see Figure 1).

[0020] The cooling unit 35 has an insertion hole 37 connected to the through hole 31 of the temperature adjusting unit 3. A plurality of insertion holes 37 are provided corresponding to the through holes 31. For example, among the plurality of insertion holes 37, four are provided in the central region 20, and three are provided in each of the outer regions 21 to 24.

[0021] <Temperature detection unit> The temperature detection unit 4 detects the temperature of regions 20 to 24 (see Figure 2) whose temperature has been adjusted by the temperature adjustment unit 3. For example, the temperature detection unit 4 is equipped with a temperature sensor 40 such as a resistance temperature detector (RTD) or a thermocouple (TC). Multiple temperature sensors 40 are provided in each of the multiple regions 20 to 24. For example, as shown in Figure 2, four temperature sensors 40 are provided in the central region 20, and three each in the outer regions 21 to 24. As shown in Figure 3, the temperature sensors 40 are positioned in the recess 13 of the mounting unit 2 through the insertion hole 37 of the cooling unit 35 and the through hole 31 of the temperature adjustment unit 3.

[0022] As shown in Figure 2, the multiple temperature sensors 40 are arranged apart from each other in both the circumferential and radial directions of the mounting surface 10 in a plan view. The multiple temperature sensors 40 are also arranged apart from each other in the central region 20 and the multiple outer regions 21-24 in a plan view. For example, the four temperature sensors 40 in the central region 20 are arranged at the same position in the radial direction and at the same interval from each other in the circumferential direction. For example, the three temperature sensors 40 in each outer region 21-24 are arranged such that in the radial direction the middle one is positioned inward from the other two in the circumferential direction, and the three are at the same interval from each other in the circumferential direction. The temperature detected by each temperature sensor 40 is input to the control unit 5 (see Figure 1).

[0023] <Department Head> The control unit 5 monitors the temperatures detected by the multiple temperature sensors 40. The control unit 5 selects the temperature with the largest temperature change per unit time from among the multiple detected temperatures monitored. For example, the control unit 5 selects the temperature with the largest average value of temperature change per unit time from among the multiple detected temperatures monitored. The control unit 5 controls the temperature adjustment unit 3 based on the selected temperature. For example, the control unit 5 uses PID control (Proportional Integral Derivative Controller) to control the temperature adjustment unit 3 so that the temperature of a predetermined region (for example, at least one of multiple regions 20 to 24) reaches the target temperature based on the selected temperature.

[0024] In this embodiment, the control unit 5 selects the temperature with the largest average value of temperature change per unit time from among the monitored multiple detected temperatures, but it is not limited to this. For example, the control unit 5 may select the temperature with the largest average value of temperature change per unit time from among the monitored multiple detected temperatures, which is greater than a predetermined value (for example, a predetermined threshold). In other words, the control unit 5 can select the temperature with the largest temperature change per unit time from among the monitored multiple detected temperatures and control the temperature adjustment unit 3 based on the selected temperature.

[0025] <Temperature control method> Figure 4 is a flowchart of the temperature control method. The temperature control method includes a temperature monitoring step (step S1 in Figure 4), a wafer placement step (step S2 in Figure 4), a wafer inspection step (step S3 in Figure 4), a temperature selection step (step S4 in Figure 4), and a temperature adjustment step (step S5 in Figure 4).

[0026] In the temperature monitoring process, the temperature is monitored at multiple locations in at least one of the multiple regions 20-24 that are partitioned from each other in a plan view. For example, in the temperature monitoring process, the temperature is monitored at multiple locations in each of the multiple regions 20-24. For example, in the temperature monitoring process, all of the multiple temperature sensors 40 provided in each of the multiple regions 20-24 are constantly monitored. After the temperature monitoring process, the process moves on to the wafer placement process (step S2 in Figure 4).

[0027] For example, in the wafer mounting process, a semiconductor wafer W is placed on a mounting surface 10 having multiple regions 20 to 24 (step S2 in Figure 4). For example, in the wafer mounting process, a disc-shaped semiconductor wafer W is placed on a circular mounting surface 10 in a plan view so that it overlaps overall. After the wafer mounting process, the process moves on to the wafer inspection process (step S3 in Figure 4).

[0028] In the wafer inspection process, the semiconductor wafer W placed on the mounting surface 10 is inspected. For example, localized heat input occurs during the inspection of the semiconductor wafer W. After the wafer inspection process, the process moves to the temperature selection process (step S4 in Figure 4).

[0029] In the temperature selection process, the temperature with the largest temperature change per unit time is selected from among the multiple monitored temperatures. For example, in the temperature selection process, the temperature with the largest average value of temperature change per unit time is selected from among the multiple detected temperatures.

[0030] Figure 5 is an explanatory diagram of the temperature changes of multiple detected temperatures. In Figure 5, the vertical axis represents temperature and the horizontal axis represents time. For example, as shown in Figure 5, in the temperature selection process, among the multiple monitored detected temperatures (graphs A1 to A3), the one in which the maximum temperature change per unit time (time t1 to t2) is less than or equal to the temperature control start threshold Th is selected.

[0031] For example, if there is localized heat input in a predetermined area of ​​the mounting surface 10, the temperature changes of the three temperature sensors 40 (see Figure 2) provided in the predetermined area will differ from each other. For example, as shown in Figure 5, suppose that of the three temperature sensors 40, two have a maximum temperature change per unit time that is less than or equal to the temperature control start threshold Th (two graphs A1 and A2). For example, the temperature detected by the one of the two temperature sensors 40 closer to the heat input location (graph A1) rises rapidly. On the other hand, the temperature detected by the one of the two temperature sensors 40 further from the heat input location (graph A2) rises slowly. For example, in the temperature selection step, the temperature detected by the temperature sensor 40 (graph A1) is selected. After the temperature selection step, the process moves to the temperature adjustment step (step S5 in Figure 4).

[0032] In the temperature adjustment process, the temperature of a predetermined region is adjusted based on the selected temperature (Graph A1). For example, in the temperature adjustment process, the temperature of the first outer region 21 (see Figure 2) is adjusted based on the temperature detected by the temperature sensor 40 (Graph A1).

[0033] <Temperature control> Figure 6 is a plan view illustrating an example of temperature control. As described above, the semiconductor wafer has a chip whose electrical characteristics are tested by applying current. In Figure 6, the rectangular chip 50 is shown with a dashed line in a plan view, the semiconductor wafer is not shown, and the temperature detection unit 4 is shown with a solid line. For example, as shown in Figure 6, when the electrical characteristics of the chip 50 are inspected by applying current, the portion of the mounting surface 10 that overlaps with the chip 50 in a plan view (part of the first outer region 21 in the example of Figure 6) is locally heated.

[0034] Here, one of the three temperature sensors 40 located in the first outer region 21 (temperature sensor 41, indicated by the black circle) overlaps with the chip 50 in a plan view. On the other hand, the other two of the three temperature sensors 40 located in the first outer region 21 (temperature sensors 42, indicated by the dot-hatched circles) are positioned away from the chip 50 in a plan view. Therefore, the temperature change per unit time is largest for one of the three temperature sensors 40 (temperature sensor 41, indicated by the black circle). Consequently, by adjusting the temperature of the first outer region 21 based on one of the three temperature sensors 40 (temperature sensor 41, indicated by the black circle), the temperature change of the first outer region 21 can be captured more quickly compared to adjusting the temperature of the first outer region 21 based on the other two (temperature sensors 42, indicated by the dot-hatched circles).

[0035] <Effects and Effects> As described above, the temperature control device 1 of this embodiment includes a mounting section 2 having a mounting surface 10 on which a semiconductor wafer W is placed, the mounting surface 10 having a plurality of regions 20 to 24 that are partitioned from each other in a plan view, a temperature adjustment section 3 that independently adjusts the temperature of the mounting section 2 for each of the plurality of regions 20 to 24, a plurality of temperature detection sections 4 provided in at least one of the plurality of regions 20 to 24 and detecting the temperature of the region whose temperature has been adjusted by the temperature adjustment section 3, and a control section 5 that monitors the temperatures detected by the plurality of temperature detection sections 4, selects the temperature with the largest temperature change per unit time from among the monitored plurality of detected temperatures, and controls the temperature adjustment section 3 based on the selected detected temperature. With this configuration, the temperature is monitored at multiple locations in at least one of the multiple regions 20-24 that are partitioned from each other in a plan view. A semiconductor wafer W is placed on the mounting surface 10 having the multiple regions 20-24, and the temperature at the location with the largest temperature change per unit time among the monitored locations is selected. Based on the selected temperature, the temperature of the region can be adjusted. Therefore, even if there is localized heat input on the mounting surface 10 on which the semiconductor wafer W is placed, a quick response is possible.

[0036] For example, if only one temperature sensor is provided in each region of the mounting surface, and there is localized heat input in a region, and the temperature sensor is located far from the heat input location, it may take time to detect the temperature change, potentially resulting in a poor response. In contrast, according to the configuration of this embodiment, multiple temperature sensors 40 are provided in at least one of the multiple regions 20 to 24. Therefore, even if there is localized heat input in regions 20 to 24, at least one of the multiple temperature sensors 40 will be located closer to the heat input location than the others. As a result, the time required to detect temperature changes can be shortened, and the response can be improved. In addition, in this embodiment, since each region 20-24 is temperature-controlled by a thermoelectric element 30 such as a Peltier element, the response to changes in the set temperature can be improved compared to the case where the temperature is controlled by circulating a coolant. Furthermore, in this embodiment, by selecting the temperature with the largest temperature change per unit time from among the multiple monitored temperatures and adjusting the temperature of the region based on the selected temperature, it is possible to adjust the temperature of the region to the optimal temperature while simplifying temperature control compared to adjusting the temperature of the region based on all monitored temperatures. In other words, in this embodiment, although there are multiple temperature monitoring points in a predetermined region, there is only one temperature control point (for example, the temperature sensor 41 shown as a black circle in Figure 6), so that the temperature can be adjusted to the target temperature quickly and accurately.

[0037] Furthermore, in this embodiment, since temperature control is performed using a thermoelectric element 30 such as a Peltier element, the need for a heating mechanism and a cooling mechanism, which are required when temperature control is performed by circulating a coolant, is eliminated. As a result, energy consumption can be reduced, and the installation space of the equipment can be reduced.

[0038] In this embodiment, the mounting surface 10 is formed in a circular shape when viewed from above. The multiple temperature detection units 4 are arranged apart from each other in the circumferential and radial directions of the mounting surface 10 when viewed from above. Therefore, even if there is localized heat input at any position on the mounting surface 10 on which the semiconductor wafer W is placed, it can respond quickly.

[0039] In this embodiment, the multiple regions 20 to 24 comprise a central region 20 located in the center of the mounting surface 10 in a plan view and formed in a circular shape in a plan view, and multiple outer regions 21 to 24 located radially outside the central region 20 in a plan view, partitioned from each other in a circumferential direction and formed in an arc shape in a plan view. Multiple temperature detection units 4 are provided in each of the multiple regions 20 to 24. The multiple temperature detection units 4 are arranged apart from each other in the central region 20 and the multiple outer regions 21 to 24 in a plan view. Therefore, when a disc-shaped semiconductor wafer W is placed on the mounting surface 10, it can respond quickly even if there is localized heat input at any position in each region 20 to 24.

[0040] In this embodiment, the mounting section 2 is formed in the shape of a plate with a mounting surface 10 on its first surface 11. The temperature adjustment section 3 is provided on the second surface 12 of the mounting section 2, opposite to the side on which the mounting surface 10 is provided. The mounting section 2 has a recess 13 that opens on the second surface 12. The temperature adjustment section 3 has a through hole 31 that connects to the recess 13. The temperature detection section 4 is positioned in the recess 13 through the through hole 31. Therefore, the temperature detection unit 4 can accurately detect the temperature of the region through the recess 13 of the mounting unit 2. In addition, the temperature detection unit 4 can be positioned so as not to interfere when the semiconductor wafer W is placed on the mounting surface 10.

[0041] The temperature control method of this embodiment monitors the temperature at multiple locations in at least one of a plurality of regions 20 to 24 that are partitioned from each other in a plan view, places a semiconductor wafer W on a mounting surface 10 having the plurality of regions 20 to 24, selects the temperature with the largest temperature change per unit time from among the monitored multiple locations, and adjusts the temperature of the region based on the selected temperature. Therefore, even if there is localized heat input on the mounting surface 10 on which the semiconductor wafer W is placed, it can respond quickly.

[0042] <Other Embodiments> In the embodiments described above, an example was given in which the mounting surface is formed in a circular shape in plan view, but the invention is not limited to this. For example, the mounting surface may be formed in a rectangular shape in plan view. For example, the plan view shape of the mounting surface can be changed according to the required specifications, such as the shape of the semiconductor wafer.

[0043] In the embodiments described above, an example was given in which multiple temperature detection units are arranged apart from each other in the circumferential and radial directions of the mounting surface in a plan view, but the invention is not limited to this. For example, the multiple temperature detection units do not have to be arranged apart from each other in the circumferential and radial directions of the mounting surface in a plan view. For example, the arrangement of the multiple temperature detection units can be changed according to the required specifications.

[0044] In the embodiments described above, the multiple regions were described as comprising a central region located in the center of the mounting surface in a plan view and formed in a circular shape in a plan view, and a plurality of outer regions circumferentially separated from each other radially outside the central region in a plan view and formed in an arc shape in a plan view, but the invention is not limited to this. For example, the multiple regions may comprise a plurality of annular regions formed concentrically with the central region in a plan view. For example, the shape and arrangement of each region can be changed according to the required specifications.

[0045] In the embodiments described above, an example was given in which multiple temperature detection units are provided in each of the multiple regions, but the invention is not limited to this. For example, multiple temperature detection units may be provided in only one of the multiple regions. For example, multiple temperature detection units may be provided in at least one of the multiple regions. For example, the number and location of the temperature detection units can be changed according to the requirements.

[0046] In the above-described embodiment, the control unit monitors the detected temperatures of multiple temperature detection units provided in a predetermined region (the first outer region 21 in the example of Figure 6), selects the temperature with the largest temperature change per unit time from among the monitored multiple detected temperatures, and controls the temperature adjustment unit based on the selected detected temperature. However, the embodiment is not limited to this example. For example, as shown in Figure 7, the control unit may control the temperature adjustment unit in one of two adjacent regions in a plan view (the first outer region 21 in the example of Figure 7) based on the selected detected temperature, and also control the temperature adjustment unit in the other of the two regions (the second outer region 22 in the example of Figure 7). With this configuration, even if there is a localized heat input in the first outer region 21 of the mounting surface 10 on which the semiconductor wafer is placed, the adjacent second outer region 22 can be affected by heat. For example, when controlling the temperature adjustment unit in the second outer region 22, the control unit may select the temperature detected by the temperature sensor (indicated by the white circle) that is closest to the temperature sensor (indicated by the black circle) in the first outer region 21 (indicated by the black circle) among the multiple temperature detection units (three temperature sensors 40) in the second outer region 22, and control the temperature adjustment unit in the second outer region 22 based on the selected temperature.

[0047] In the embodiments described above, the temperature is monitored at multiple locations within a predetermined region, which is divided into multiple regions in a plan view. A semiconductor wafer is placed on a mounting surface having multiple regions, and the temperature of the region is adjusted based on the temperature of the monitored multiple locations, selecting the one with the largest temperature change per unit time. However, the embodiments are not limited to this example. For example, as shown in Figure 8, the temperature may be monitored at multiple locations in all of the multiple regions, the temperature with the largest temperature change per unit time may be selected from the monitored multiple locations, and the temperature of all regions may be adjusted based on the selected temperature. For example, when controlling the temperature adjustment unit in each region 20 to 24, the control unit may control the temperature adjustment unit in each region 20 to 24 based on only one control point in each region 20 to 24 (for example, the temperature detected by the temperature sensor 41 shown as a black circle in Figure 8). For example, the manner of temperature adjustment in each region can be changed according to the required specifications.

[0048] In the embodiments described above, an example was given in which the mounting portion is formed in a plate shape with a mounting surface as its first surface, but the invention is not limited to this. For example, the mounting portion may be formed in a block shape with a mounting surface as its first surface. For example, the shape of the mounting portion can be changed according to the required specifications.

[0049] In the embodiments described above, an example was given in which the temperature control unit is provided on the second surface of the mounting unit, opposite to the side on which the mounting surface is provided, but the invention is not limited to this. For example, the temperature control unit may be built into the mounting unit. For example, the installation method of the temperature control unit can be changed according to the required specifications.

[0050] In the above-described embodiment, the temperature detection unit is positioned in a recess of the mounting unit through a through-hole in the temperature adjustment unit, and the temperature of the area is detected through the recess of the mounting unit. However, the invention is not limited to this example. For example, the temperature detection unit may detect the temperature of the area without passing through the recess of the mounting unit. For example, the temperature detection unit may be a non-contact type temperature sensor. For example, the configuration of the temperature detection unit can be changed according to the required specifications.

[0051] In the embodiments described above, an example of a semiconductor wafer temperature control method was explained in which temperature monitoring is performed before wafer placement (an example in which the process proceeds to the wafer placement step after the temperature monitoring step), but the method is not limited to this. For example, temperature monitoring may be performed after wafer placement (the process proceeds to the temperature monitoring step after the wafer placement step). For example, the timing of temperature monitoring can be changed according to the required specifications.

[0052] In the embodiments described above, a temperature control device for controlling the temperature of a semiconductor wafer having a chip whose electrical characteristics are tested by energization (the temperature of a semiconductor wafer that has been locally heated by energization) to a target temperature was given as an example of a temperature control device for a semiconductor wafer, but it is not limited to this. For example, the temperature control device may be applied to a temperature control device for controlling the temperature of a semiconductor wafer that does not have a chip whose electrical characteristics are tested by energization to a target temperature. For example, the temperature control device may be applied to a temperature control device for controlling the temperature of a semiconductor wafer such as a silicon wafer to a target temperature. For example, the temperature control device may be used in a dry process. For example, the manner in which the temperature control device is used can be changed according to the required specifications.

[0053] Although embodiments of the present invention have been described above, the present invention is not limited thereto, and additions, omissions, substitutions, and other modifications to the configuration are possible without departing from the spirit of the invention, and the above embodiments can be combined as appropriate. [Explanation of Symbols]

[0054] 1...Temperature control device, 2...Placement unit, 3...Temperature adjustment unit, 4...Temperature detection unit, 5...Control unit, 10...Placement surface, 11...First surface, 12...Second surface, 13...Recess, 20...Central region (area), 21...First outer region (area), 22...Second outer region (area), 23...Third outer region (area), 24...Fourth outer region (area), 30...Thermoelectric element, 31...Through hole, W...Semiconductor wafer

Claims

1. A mounting section having a mounting surface on which a semiconductor wafer is placed, the aforementioned mounting surface having a plurality of regions that are partitioned from each other in a plan view, A temperature adjustment unit that independently adjusts the temperature of the above-described installation unit for each of the multiple regions, A temperature detection unit is provided in at least one of the aforementioned multiple regions and detects the temperature of the region whose temperature has been adjusted by the temperature adjustment unit. The system includes a control unit that monitors the temperatures detected by the plurality of temperature detection units, selects the temperature with the largest temperature change per unit time from among the monitored temperature, and controls the temperature adjustment unit based on the selected temperature. Semiconductor wafer temperature control device.

2. The mounting surface is formed in a circular shape when viewed from above. The plurality of temperature detection units are arranged apart from each other in the circumferential and radial directions of the mounting surface described above when viewed from above. A semiconductor wafer temperature control device according to claim 1.

3. The aforementioned multiple regions are, A central region is located in the center of the aforementioned mounting surface in a plan view, and is formed in a circular shape in a plan view, The system comprises a plurality of outer regions that are circumferentially separated from one another on the radially outer side of the central region in a plan view, and which are formed in an arc shape in a plan view, The temperature detection unit is provided in multiple locations in each of the multiple regions. The plurality of temperature detection units are arranged apart from each other in a plan view in the central region and the plurality of outer regions, respectively. The semiconductor wafer temperature control device according to claim 2.

4. The temperature detection unit is provided in multiple locations in each of the multiple regions. The control unit controls the temperature adjustment unit in one of two adjacent regions in a plan view, and also controls the temperature adjustment unit in the other of the two regions, based on the selected detected temperature. A semiconductor wafer temperature control device according to any one of claims 1 to 3.

5. The mounting portion is formed in the shape of a plate having the mounting surface described above as its first surface, The temperature adjustment unit is provided on the second surface of the mounting section opposite to the side on which the mounting surface described above is provided. The mounting portion has a recess that opens on the second surface, The temperature adjustment unit has a through hole connected to the recess, The temperature detection unit is positioned in the recess through the through hole. A semiconductor wafer temperature control device according to any one of claims 1 to 4.

6. The temperature control unit includes a thermoelectric element. A semiconductor wafer temperature control device according to any one of claims 1 to 5.

7. The temperature is monitored at multiple locations in at least one of several regions that are partitioned from each other in a plan view. A semiconductor wafer is placed on the mounting surface having the plurality of regions, Select the location with the largest temperature change per unit time from among the multiple locations monitored. Adjust the temperature of the region based on the selected temperature. A method for controlling the temperature of a semiconductor wafer.

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