Electrode embedding member and substrate holding member

Abstract

To provide an electrode burying member and a substrate holding member capable of providing sharp temperature gradient to a placed substrate.SOLUTION: An electrode burying member 100 comprises: a base material 10 formed by a ceramic sintered body; and a heater electrode 20 buried in the base material 10. The base material 10 has one or more tubular cavities 30 inside the base material 10. In a vertical cross section of the base material 10, a ceiling part 32 of each cavity 30 is located at a position closer to a top face 12 of the base material 10 than an upper end surface 26 of a heater electrode layer 24 in which the heater electrode 20 is buried. A bottom part 34 of the cavity 30 is located at a position closer to a lower surface 14 opposed to the top face 12 of the base material 10 than a lower end surface 28 of the heater electrode layer 24. The heater electrode 20 is divided into a plurality of regions by means of the cavities 30.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to an electrode-embedded member and a substrate holding member.

Background Art

[0002] As a member for semiconductor manufacturing equipment, a heater plate (electrode-embedded member) having an embedded electrode (heating resistor) has been used. The heater plate can heat a placed substrate.

[0003] When it is intended to provide a temperature gradient in a specific region of a substrate placed on the substrate mounting surface of a heater, a multi-zone heater in which heater electrodes are divided into a plurality of regions is applied, and predetermined power is applied to the heater electrodes in each region. However, when the thermal conductivity of the ceramic base material is high, heat diffuses also in the horizontal direction, making it impossible to form a sharp temperature gradient in a predetermined region of the substrate. Further, when the thermal conductivity of the ceramic base material is low, it is difficult to efficiently increase the temperature of the substrate.

[0004] Patent Document 1 discloses a ceramic heater characterized by comprising: a plurality of heating resistors embedded inside a ceramic base material; a mounting surface formed on the surface of the ceramic base material for mounting an object to be heated; and at least one partition groove provided on the opposite side of the mounting surface from the mounting surface so as to penetrate through a substantially flat surface where the plurality of heating resistors are embedded, and partitioning the operating regions of the heating resistors, for the purpose of providing a ceramic heater that realizes precise uniform temperature control of wafers and the like under various environments in semiconductor processes.

Prior Art Literature

Patent Literature

[0005]

Patent Literature 1

Summary of the Invention

Problem to be Solved by the Invention

[0006] Patent Document 1 describes a design in which heating resistors are separated by grooves, and while the heat generated from the heater electrodes is suppressed from diffusing horizontally, it requires forming deep grooves in the direction of the mounting surface from the back surface of the ceramic substrate, which reduces the strength of the substrate itself. Therefore, in environments where it is used at high temperatures, the risk of substrate breakage increases. In addition, electrical connection between the separated heater electrodes and electrical wiring from the inside of the shaft provided in the center of the bottom surface of the substrate were difficult.

[0007] Therefore, there has been a demand for a heater that can provide a sharp temperature gradient on the mounted substrate, while also being practical and highly reliable.

[0008] This invention has been made in view of these circumstances, and aims to provide an electrode embedding member and a substrate holding member that can provide a sharp temperature gradient on a substrate on which it is placed. [Means for solving the problem]

[0009] above To achieve the above objective, the electrode embedding member of the present invention comprises an electrode embedding member comprising a base material formed of a ceramic sintered body and a heater electrode embedded in the base material. ru. The substrate has one or more tubular cavities inside, and in a vertical cross-section of the substrate, the ceiling of the cavity is located closer to the upper surface of the substrate than the upper end surface of the heater electrode layer in which the heater electrode is embedded, and the bottom of the cavity is located closer to the lower surface of the substrate opposite the upper surface than the lower end surface of the heater electrode layer, and the heater electrode is divided into multiple regions by the cavity. When the parallel distance between the upper surface and the lower surface of the substrate is D, the distance between the ceiling of the cavity and the upper surface of the substrate is T1, and the distance between the bottom of the cavity and the lower surface of the substrate is T2, 0 < (T1 + T2) / D ≤ 0.5, and T1 ≤ T2 It is characterized by the following:

[0010] In this way, a tubular cavity is formed inside the substrate in a vertical cross-section of the substrate, where the ceiling of the cavity is located closer to the top surface of the substrate than the upper end surface of the heater electrode layer, and the bottom of the cavity is located closer to the bottom surface of the substrate than the lower end surface of the heater electrode layer. By dividing the heater electrode into multiple regions with the cavity, horizontal heat diffusion can be suppressed, thereby providing a sharp temperature gradient on the substrate placed on the electrode embedding member.

[0011] Book In the electrode embedding member of the invention, the cavity, when viewed through from the top surface, includes an annular, linear, or a combination thereof shape. That's fine. .

[0012] In this way, by forming the cavity in a ring shape, the heater electrodes can be divided into inner and outer sections of the cavity, and the temperature gradient of the substrate can be set in the radial direction of the cavity's circle. Alternatively, by forming the cavity in a straight line, the heater electrodes can be divided on both sides of the line, and the temperature gradient of the substrate can be set perpendicular to the line.

[0013] Book In the electrode embedding member of the invention, the cavity, when viewed through from the top surface, includes the shape of a plurality of arcs. That's fine. .

[0014] In this way, by forming the cavity in an arc shape, the heater electrodes and the wiring for their conductivity can be positioned outside the ends of the arc. As a result, it becomes easier to apply power to multiple electrode regions. Furthermore, the mechanical strength of the electrode embedding member can be increased.

[0015] Book In the electrode embedding member of the invention, the cavity, when viewed through the substrate from above, includes a plurality of concentric annular or arc-shaped forms. That's fine. .

[0016] In this way, by forming the cavities in a concentric pattern, the heater electrodes can be partitioned in a concentric pattern. This allows the temperature gradient of the substrate W to be precisely set in the radial direction of the cavity circles.

[0017] Book In the electrode-embedded member according to the invention, an electrostatic chuck electrode or a high-frequency electrode is further embedded in the base material It's fine. .

[0018] As described above, by further embedding an electrostatic chuck electrode or a high-frequency electrode in the base material, semiconductor manufacturing processes such as the electrostatic adsorption function for a substrate and application of bias by high-frequency power can be made more highly functional.

[0019] Book In the electrode-embedded member according to the invention, the electrostatic chuck electrode or the high-frequency electrode is embedded at a position closer to the upper surface of the base material than the ceiling portion of the cavity It's fine. .

[0020] As described above, embedding the electrostatic chuck electrode or the high-frequency electrode at a position closer to the upper surface of the base material than the ceiling portion of the cavity increases the degree of freedom in designing the electrostatic chuck electrode or the high-frequency electrode.

[0021] Book In the electrode-embedded member according to the invention, a distance from the upper surface to an upper end face of the heater electrode layer is 1 mm or more and 8 mm or less You can .

[0022] Arranging the heater electrode layer in such a range makes it possible to appropriately suppress diffusion of heat in the horizontal direction while maintaining the strength of the upper surface of the base material. Further, another electrode can be embedded above the heater electrode layer.

[0023] As mentioned above, In the electrode-embedded member of the present invention, when D represents the parallel distance between the upper surface and the lower surface, T1 represents the distance between the ceiling portion of the cavity and the upper surface of the base material, and T2 represents the distance between the bottom portion of the cavity and the lower surface of the base material, 0<(T1+T2) / D≦0.5 is satisfied 。

[0024] Setting T1 and T2 within the above range with respect to D makes it possible to sufficiently suppress diffusion of heat in the horizontal direction.

[0025] Book In the electrode embedding member of the invention, the base material has a channel with an opening on the surface of the base material, and the cavity communicates with the channel. You may .

[0026] In this way, a channel with an opening is formed in the substrate surface, and the cavity communicates with the channel, allowing for vacuum evacuation or supply of a predetermined gas from the channel to adjust the pressure in the cavity. Furthermore, the cavity can be connected to a chamber where an electrode embedding member is installed. As a result, the thermal insulation of the cavity can be adjusted, thereby allowing for adjustment of the temperature distribution of the substrate on the substrate mounting surface.

[0027] Book In the electrode embedding member of the invention, the heater electrode is divided into a plurality of regions to which different powers can be applied. It's fine. .

[0028] This allows for a sharper temperature gradient to be created on the substrate placed on the electrode embedding member.

[0029] Book The substrate holding member of the invention is a substrate holding member, This invention The device comprises an electrode embedding member and a support member joined to the lower surface of the base material and supporting the electrode embedding member. It's fine. .

[0030] This allows for a sharp temperature gradient on the substrate, enabling the construction of a substrate holding member with high mechanical strength. [Effects of the Invention]

[0031] According to the electrode embedding member and substrate holding member of the present invention, a sharp temperature gradient can be provided on the placed substrate. [Brief explanation of the drawing]

[0032] [Figure 1]This is a schematic cross-sectional view showing an example of an electrode embedding member according to an embodiment of the present invention. [Figure 2] This is a schematic diagram showing an example of the upper surface of an electrode embedding member according to the embodiment. [Figure 3] This is a schematic cross-sectional view showing an example of the heater electrode layer of an electrode embedding member according to the embodiment. [Figure 4] This is a schematic cross-sectional view showing a modified example of the electrode embedding member according to the embodiment. [Figure 5] This is a schematic diagram showing a modified example of the upper surface of the electrode embedding member according to the embodiment. [Figure 6] This is a schematic cross-sectional view showing a modified example of the heater electrode layer of the electrode embedding member according to the embodiment. [Figure 7] This is a schematic cross-sectional view showing a modified example of the heater electrode layer of the electrode embedding member according to the embodiment. [Figure 8] This is a schematic cross-sectional view showing a modified example of the electrode embedding member according to the embodiment. [Figure 9] This is a schematic diagram showing a modified example of the upper surface of the electrode embedding member according to the embodiment. [Figure 10] This is a schematic cross-sectional view showing a modified example of the heater electrode layer of the electrode embedding member according to the embodiment. [Figure 11] This is a schematic cross-sectional view showing a modified example of the electrode embedding member according to the embodiment. [Figure 12] This is a schematic cross-sectional view showing a modified example of the electrode embedding member according to the embodiment. [Figure 13] This is a schematic cross-sectional view showing a modified example of the electrode embedding member according to the embodiment. [Figure 14] This is a schematic cross-sectional view showing a modified example of the electrode embedding member according to the embodiment. [Figure 15] This is a schematic diagram showing a modified example of the lower surface of the electrode embedding member according to the embodiment. [Figure 16] This is a schematic cross-sectional view showing an example of a substrate holding member according to the embodiment. [Figure 17] (a) to (d) are schematic cross-sectional views showing one step in the manufacturing method of the electrode embedding member. [Figure 18] This is a schematic cross-sectional view showing one step in the manufacturing method of an electrode embedding member. [Figure 19] This table shows the shape characteristics, cavity atmosphere, and temperature measurement results for the examples and comparative examples. [Modes for carrying out the invention]

[0033] Next, embodiments of the present invention will be described with reference to the drawings. To facilitate understanding of the explanation, the same reference numeral is used for identical components in each drawing, and redundant explanations are omitted. Note that the sizes of each component in the configuration diagrams are conceptual representations and do not necessarily represent actual dimensional ratios.

[0034] [Embodiment] (Configuration of electrode embedding components) An electrode embedding member according to an embodiment of the present invention will be described with reference to Figures 1 to 3. Figure 1 is a schematic cross-sectional view showing an example of an electrode embedding member according to an embodiment of the present invention. Figure 2 is a schematic diagram showing an example of the upper surface of an electrode embedding member according to an embodiment of the present invention. Figure 1 shows a cross-section along line AA in Figure 2. Figure 3 is a schematic cross-sectional view showing an example of the heater electrode layer of an electrode embedding member according to an embodiment of the present invention. The electrode embedding member 100 according to an embodiment of the present invention comprises a base material 10 and a heater electrode 20.

[0035] The base material 10 is formed from a ceramic sintered body. The base material 10 may be in various shapes, such as a roughly circular disc, a polygonal plate, or an elliptical plate. The base material 10 is flat except for the cavity 30 and any protrusions formed on the upper surface 12. The base material 10 may also have a convex or concave shape towards the center.

[0036] The base material 10 is preferably integrally formed from a ceramic sintered body. Integral formation of the base material 10 from a ceramic sintered body means that the ceramic sintered body forming the ceiling portion 32 of the cavity 30 (described later) and the ceramic sintered body forming the bottom portion 34 of the cavity 30 are joined together using or without a ceramic-containing bonding material. This increases the mechanical strength of the base material 10.

[0037] The heater electrode 20 is embedded in the substrate 10. The heater electrode 20 is used to heat the substrate (wafer) W.

[0038] The base material 10 has one or more tubular cavities 30 inside. In a vertical cross-section of the base material 10, the ceiling portion 32 of the cavity 30 is located closer to the upper surface 12 of the base material 10 than the upper end surface 26 of the heater electrode layer 24 in which the heater electrode 20 is embedded. The bottom portion 34 of the cavity 30 is located closer to the lower surface 14 facing the upper surface 12 of the base material 10 than the lower end surface 28 of the heater electrode layer 24. The width L of the cavity 30 is preferably 1 mm or more and 10 mm or less, and more preferably 1 mm or more and 5 mm or less. The cross-sectional shape of the cavity 30 is not limited to a rectangle, but can be any shape that is manufacturable, such as a circle, ellipse, semicircle, or stepped shape.

[0039] The heater electrode 20 is divided into multiple regions by the cavity 30. The division of the heater electrode 20 into multiple regions by the cavity 30 means that a cavity 30 exists across the heater electrode layer 24 on a straight line connecting two points on the heater electrode 20. Therefore, if the heater electrode 20 is positioned so as to straddle at least some of the cavities 30 of the electrode embedding member 100, it can be said that the heater electrode 20 is divided into multiple regions by the cavity 30. This suppresses at least the horizontal diffusion of heat in the heater electrode layer 24. Thus, the division of the heater electrode 20 into multiple regions by the cavity 30 and the division of the heater electrode 20 into multiple regions to which different powers can be applied are different concepts. Therefore, the division of the heater electrode 20 into multiple regions includes cases where some or all of the heater electrode 20 included in different regions are electrically connected.

[0040] The cavity 30, when viewed through the substrate 10 from the top surface 12, preferably includes annular, linear, or a combination thereof. By forming the cavity 30 in an annular shape, the heater electrode 20 can be divided into an inner and outer section of the cavity 30. This allows the temperature gradient of the substrate W to be set in the radial direction of the cavity 30. Alternatively, by forming the cavity 30 in a linear shape, the heater electrode 20 can be divided on both sides of the line. This allows the temperature gradient of the substrate W to be set perpendicular to the line. The dotted line in Figure 2 shows the shape of the cavity 30 when viewed through the substrate 10 from the top surface 12. Other structures that can be viewed through the cavity 30 are omitted.

[0041] As shown in Figure 3, the electrode embedding member 100 in Figure 1 has a heater electrode layer 24 that is divided into two regions by a cavity 30: an inner circumferential heater electrode region 21a and an outer circumferential heater electrode region 22a. An inner circumferential heater electrode 21 and an outer circumferential heater electrode 22 are formed in each region. In other words, the heater electrode 20 is divided into two regions, the inner circumferential heater electrode 21 and the outer circumferential heater electrode 22, by the cavity 30. In Figure 3, the heater electrode 20 may be embedded throughout each region of the inner circumferential heater electrode 21 and the outer circumferential heater electrode 22, or a heater electrode 20 of a shape according to the design of the electrode embedding member 100 may be embedded within each region.

[0042] Preferably, the heater electrode 20 is divided into multiple regions to which different powers can be applied. This allows a sharp temperature gradient to be provided by the substrate W placed on the electrode embedding member 100. The electrode embedding member 100 in Figure 1 shows an example in which the heater electrode 20 is divided into two regions, the inner circumferential heater electrode 21 and the outer circumferential heater electrode 22, by a cavity 30, and the inner circumferential heater electrode 21 and the outer circumferential heater electrode 22 are connected to different terminals to which different powers can be applied.

[0043] Figure 1 shows an example where the inner heater electrode 21 is directly connected to terminal 50, and the outer heater electrode 22 is connected to terminal 51 via via 62 and wiring 60 embedded in a different layer from the heater electrode layer 24. However, the configuration of the electrical connection between the heater electrode 20 and terminals 50 and 51 is not limited to this. For example, the inner heater electrode 21 and the outer heater electrode 22 may be connected to the same terminal 50. In this way, the electrode embedding member 100 allows wiring between the bottom 34 of the cavity 30 and the lower surface 14 of the base material 10, making electrical connection easier even if the heater electrode 20 is partitioned or divided.

[0044] The upper end surface 26 of the heater electrode layer 24 is preferably located at a distance of 1 mm to 8 mm from the upper surface 12. This allows for appropriate suppression of horizontal heat diffusion while maintaining the strength of the upper surface 12 of the substrate 10. In addition, other electrodes can be embedded in the upper part of the heater electrode layer 24.

[0045] When D is the parallel distance between the upper surface 12 and the lower surface 14 of the base material 10, T1 is the distance between the ceiling portion 32 of the cavity 30 and the upper surface 12 of the base material 10, and T2 is the distance between the bottom portion 34 of the cavity 30 and the lower surface 14 of the base material 10, it is preferable that 0 < (T1 + T2) / D ≤ 0.5. This allows for sufficient suppression of horizontal heat diffusion in the electrode embedding member 100. If (T1 + T2) / D is greater than 0.5, horizontal heat diffusion becomes significant, and it may become difficult to maintain the substrate temperature in a predetermined area. Note that if the ceiling portion 32 is not a horizontal plane, the distance T1 between the ceiling portion 32 and the upper surface 12 should be measured from the position closest to the upper surface 12. Also, if the bottom portion 34 is not a horizontal plane, the distance T2 between the bottom portion 34 and the lower surface 14 should be measured from the position closest to the lower surface 14.

[0046] Figure 4 is a schematic cross-sectional view showing a modified example of an electrode embedding member according to an embodiment of the present invention. Figure 5 is a schematic diagram showing a modified example of the upper surface of an electrode embedding member according to an embodiment of the present invention. Figure 4 shows a cross-section along line BB in Figure 5. Figure 6 is a schematic cross-sectional view showing an example of the heater electrode layer of an electrode embedding member according to an embodiment of the present invention.

[0047] The cavity 30 preferably has a shape that includes multiple arcs when viewed through the top surface 12 of the base material 10. By forming the cavity 30 in an arc shape, the heater electrodes 20 and the wiring for their conductivity can be placed outside the ends of the arcs. As a result, it becomes easier to apply power to multiple electrode regions. In addition, since a part of the base material 10 is located outside the ends of the arcs, the mechanical strength of the base material 10 can be further increased.

[0048] When the cavity 30 includes multiple arc-shaped shapes when the substrate 10 is viewed from the top surface 12, it is preferable that the multiple arc-shaped cavities 30 are arranged in an annular shape as a whole. This allows the heater electrode 20 to be divided into the inside and outside of the annular cavity 30, except in the region of the gap at the ends of the arcs. This allows the temperature gradient of the substrate W to be set in the radial direction of the cavity 30. The electrode embedding member 100 in Figure 4 has four arc-shaped cavities 30 formed along a single circle centered on the center 16 of the substrate 10, as shown in Figure 5. However, the number of arc-shaped cavities 30 is not limited to four.

[0049] As shown in Figure 6, the electrode embedding member 100 in Figure 4 has a heater electrode layer 24 that is divided into three regions by the cavity 30: an inner circumferential heater electrode region 21a, an outer circumferential heater electrode region 22a, and a gap heater electrode region 23a (the gap region at the ends of adjacent arc-shaped cavities 30). An inner circumferential heater electrode 21, an outer circumferential heater electrode 22, and a gap heater electrode 23 are formed in each region. In other words, the heater electrode 20 is divided into three regions by the cavity 30: an inner circumferential heater electrode 21, an outer circumferential heater electrode 22, and a gap heater electrode 23. The inner circumferential heater electrode 21 and the outer circumferential heater electrode 22 are electrically connected by the gap heater electrode 23. Note that the electrode formed in the gap heater electrode region 23a may be a wiring layer that electrically connects the inner circumferential heater electrode 21 and the outer circumferential heater electrode 22 instead of the gap heater electrode 23. Alternatively, the outer peripheral heater electrode 22 may be connected to a terminal different from the terminal 50 to which the inner peripheral heater electrode 21 is connected, via a wiring layer that does not intersect with the inner peripheral heater electrode 21.

[0050] In Figure 6, the inner circumferential heater electrode 21, the outer circumferential heater electrode 22, and the gap heater electrode 23 may have heater electrodes 20 embedded throughout their respective regions, or they may have heater electrodes 20 embedded in each region in a shape corresponding to the design of the electrode embedding member 100.

[0051] Figure 7 is a schematic cross-sectional view showing a modified example of the heater electrode layer of the electrode embedded member according to the embodiment. In Figure 7, the heater electrode layer 24 is divided into three regions by a cavity 30: an inner circumferential heater electrode region 21a, an outer circumferential heater electrode region 22a, and a gap heater electrode region 23a. In this example, an inner circumferential heater electrode 21 is formed in the inner circumferential heater electrode region 21a, and an outer circumferential heater electrode 22 is formed in the outer circumferential heater electrode region 22a, but no gap heater electrode 23 or wiring layer is formed in the gap heater electrode region 23a. That is, the heater electrode 20 is divided into two regions by the cavity 30: the inner circumferential heater electrode 21 and the outer circumferential heater electrode 22. Even if the cavity 30 is formed in multiple arc shapes, the inner circumferential heater electrode 21 and the outer circumferential heater electrode 22 do not need to be connected. Furthermore, different powers may be applied to these heater electrodes 20.

[0052] Figure 8 is a schematic cross-sectional view showing a modified example of an electrode embedding member according to an embodiment of the present invention. Figure 9 is a schematic diagram showing a modified example of the upper surface of an electrode embedding member according to an embodiment of the present invention. Figure 8 shows a cross-section along the CC line in Figure 9. Figure 8 does not show the terminals 50 and terminal holes 52. Figure 10 is a schematic cross-sectional view showing a modified example of the heater electrode layer of an electrode embedding member according to an embodiment of the present invention.

[0053] Preferably, the cavity 30, when viewed through the substrate 10 from the top surface 12, includes multiple concentric annular or arc-shaped forms. By forming the cavity 30 concentrically, the heater electrodes 20 can be concentrically partitioned. This allows the temperature gradient of the substrate W to be precisely set in the radial direction of the cavity 30. If the cavity 30 includes annular or arc-shaped forms when viewed through the substrate 10 from the top surface 12, there may be a circular cavity 30 in the center.

[0054] As shown in Figure 10, the electrode embedding member 100 in Figure 8 has a heater electrode layer 24 divided into four regions by a cavity 30. A heater electrode 20 is formed in each of these regions. That is, the heater electrode 20 is divided into four regions by the cavity 30. In Figure 10, the heater electrode 20 may be embedded throughout each region, or a heater electrode 20 of a shape according to the design of the electrode embedding member 100 may be embedded within each region. The four heater electrodes 20 may be connected to the same terminal 50, or they may be connected to different terminals 50.

[0055] The electrode embedding members 100 in Figures 1 to 3 have a single annular cavity 30 formed around the center 16 of the base material 10. The electrode embedding members 100 in Figures 4 to 7 have four arc-shaped cavities 30 formed along a single circle centered around the center 16 of the base material 10. Furthermore, the electrode embedding members 100 in Figures 8 to 10 have three concentric annular cavities 30 formed around the center 16 of the base material 10. However, the arrangement and shape of the cavities 30 are not limited to these. For example, the number of concentric circles in the cavities 30 may be two or four or more. Also, annular cavities 30 and arc-shaped cavities 30 may be combined to form a double or more concentric circle. Also, arc-shaped cavities 30 and linear cavities 30 may be combined. Also, annular cavities 30, arc-shaped cavities 30 and linear cavities 30 may be combined. The annular cavity 30, the arc-shaped cavity 30, and the circular cavity 30 and the linear cavity 30 may be in communication with each other.

[0056] Figures 11 to 13 are schematic cross-sectional views showing modified examples of electrode embedding members according to the present invention. As shown in Figures 11 to 13, it is preferable that electrostatic adsorption electrodes or high-frequency electrodes (other electrodes 70) are further embedded in the substrate 10. This makes the semiconductor manufacturing process more functional, such as the electrostatic adsorption function of the substrate W and the application of bias by high-frequency power. Figures 11 and 12 do not show the terminals 50 and terminal holes 52 connected to the other electrodes 70. Figure 13 does not show the terminals 50 and terminal holes 52.

[0057] It is preferable that the other electrodes 70 are embedded in a position closer to the upper surface 12 of the base material 10 than to the ceiling 32 of the cavity 30. This increases the design flexibility of the electrostatic adsorption electrodes or high-frequency electrodes. Figures 11 to 13 show examples in which the other electrodes 70 are embedded in a position closer to the upper surface 12 of the base material 10 than to the ceiling 32 of the cavity 30.

[0058] Figure 14 is a schematic cross-sectional view showing a modified example of an electrode embedding member according to an embodiment of the present invention. In Figure 14, terminals and the like connected to the outer peripheral heater electrode 22 are omitted. Figure 15 is a schematic diagram showing a modified example of the lower surface of an electrode embedding member according to an embodiment of the present invention. The dotted lines in Figure 15 indicate the shape of the cavity 30 and the flow path 80 when the base material 10 is viewed through from the lower surface 14. Other visible structures and terminals besides the cavity 30 and flow path 80 are omitted.

[0059] The substrate 10 has a flow channel 80 with an opening 82 on its surface (top surface 12, bottom surface 14, or side surface), and it is preferable that the cavity 30 communicates with the flow channel 80. This allows for vacuum evacuation or supply of a predetermined gas from the flow channel 80 to adjust the pressure in the cavity 30. Alternatively, the cavity 30 can be connected to a chamber in which the electrode embedding member 100 is installed. As a result, the thermal insulation of the cavity 30 can be adjusted, thereby allowing for adjustment of the temperature distribution of the substrate W on the substrate mounting surface.

[0060] If there are multiple cavities 30, a flow path 80 may be provided for each of the cavities 30. Alternatively, a flow path 80 for supplying gas to one cavity 30 and a flow path 80 for discharging gas may be provided as a set.

[0061] The electrode embedding member 100 may be provided with pin-shaped protrusions 40. In that case, multiple pin-shaped protrusions 40 are formed, protruding upward from the upper surface 12 of the base material 10. The shape of the pin-shaped protrusions 40 can be appropriately selected from shapes such as cylindrical, prismatic, or other columnar shapes; conical, pyramidal, or other conical shapes; or shapes obtained by cutting off the upper part of a frustoconical or frustoconical shape.

[0062] The arrangement of the pin-shaped protrusions 40 is not particularly limited. It can be a known form or a similar form, for example, in addition to the concentric circles shown in Figure 2, it may be a regular arrangement such as a square grid or a triangular grid, or it may be an irregular arrangement where there are localized areas of density.

[0063] When pin-shaped protrusions 40 are formed on the base material 10, the upper ends of the multiple pin-shaped protrusions together form a predetermined flat or curved surface (substrate mounting surface) on which the substrate W is placed. In this way, the multiple pin-shaped protrusions 40 support the substrate W. That is, the substrate mounting surface formed by the upper ends of the multiple pin-shaped protrusions is determined. As a result, the upper ends of the multiple pin-shaped protrusions come into contact with the substrate W, and the substrate W is supported. It should be noted that some of the multiple pin-shaped protrusions 40 may not have their upper ends in contact with the substrate W. This is because even if such protrusions exist, it is possible to support the substrate W depending on the arrangement of the surrounding pin-shaped protrusions 40. The upper ends of the pin-shaped protrusions may be in contact with the substrate W over their entire surface, or only a portion of them may be in contact with the substrate W.

[0064] The height of the pin-shaped protrusion 40 is preferably 10 μm or more and 500 μm or less. The height of the pin-shaped protrusion 40 refers to the distance from the upper surface 12 of the base material 10 to the upper end of the pin-shaped protrusion. The upper end of the pin-shaped protrusion is preferably a flat surface of a predetermined size. In that case, the maximum diameter of the flat surface at the upper end of the pin-shaped protrusion is preferably 100 μm or more and 5 mm or less. The surface roughness of the flat surface at the upper end of the pin-shaped protrusion is preferably Ra 0.01 μm or more and 1.6 μm or less.

[0065] The electrode embedding member 100 may also be provided with lift pin holes (not shown), ventilation holes for use as a vacuum chuck, annular protrusions, etc.

[0066] (Configuration of the substrate holding member) Next, the configuration of the substrate holding member according to the embodiment will be described. Figure 16 is a schematic cross-sectional view showing an example of a substrate holding member according to the embodiment of the present invention. The substrate holding member 200 comprises an electrode embedding member 100 and a support member 110. The basic configuration of the electrode embedding member 100 is as described above. The substrate holding member 200 in Figure 16 shows an example using the electrode embedding member 100 of Figure 11.

[0067] The support member 110 is made of a ceramic sintered body and supports the electrode embedding member 100. This allows the substrate holding member 200 to be applied to a shaft heater or the like. The support member 110 is joined to a predetermined position on the lower surface 14 of the electrode embedding member 100. The joining may be solid-phase joining or joining using a joining material. Preferably, the support member 110 is formed of a ceramic sintered body having the same main component as the base material 10 of the electrode embedding member 100.

[0068] [Manufacturing method for embedded electrode members] Next, a method for manufacturing an electrode embedded member according to an embodiment of the present invention will be described. An electrode embedded member according to an embodiment of the present invention is manufactured, for example, by laminating and joining base material precursors produced by the molded body hot pressing method described below. Note that the method for manufacturing the base material precursor is not limited to this method, and may be, for example, a powder hot pressing method or a conventional green sheet lamination method. The powder hot pressing method is a method in which ceramic raw material powder and predetermined heat-generating resistors or electrodes are alternately layered to embed the heat-generating resistors or electrodes inside the ceramics, and then fired using a uniaxial hot pressing method.

[0069] The method for manufacturing an electrode embedded member according to an embodiment of the present invention by the molded body hot pressing method comprises a ceramic molded body formation step, a ceramic degreased body production step, a laminate formation step, a laminate firing step, a substrate precursor processing step, a substrate precursor bonding step, and a substrate processing step.

[0070] In the ceramic molded body formation process, for example, multiple ceramic molded bodies are formed from ceramic raw material powder mainly composed of AlN. Sintering aids may be added as needed. For example, AlN ceramic raw material powder is mixed with appropriate additives such as Y2O3 as the Y component of the sintering aid, a binder, a plasticizer, and a dispersant to prepare a slurry, and granules (ceramic raw material powder) are formed by a spray-drying method or the like. After that, the granulated powder can be pressure-molded to form multiple ceramic molded bodies. In addition to aluminum nitride, other ceramic powders that can be used as raw materials include, for example, silicon carbide, aluminum oxide, and silicon nitride.

[0071] The ceramic raw material powder is preferably of high purity, preferably 96% or higher, and more preferably 98% or higher. Furthermore, the average particle size of the ceramic raw material powder is preferably between 0.1 μm and 1.0 μm.

[0072] The mixing method may be either wet or dry, and mixers such as ball mills and vibratory mills can be used. As for the molding method, known methods such as uniaxial pressure molding or cold isostatic pressing (CIP) can be used. It should be noted that the method for forming the ceramic molded body is not limited to pressure molding; for example, green sheet lamination or casting can also be applied, and the ceramic molded body can be manufactured by appropriately degreasing or further calcining the materials.

[0073] The ceramic molded body may be shaped by machining after molding. Furthermore, grooves shaped to match the shape of heater electrodes, other electrodes, vias, wiring, etc., may be formed on one or both sides of the ceramic molded body (the bonding surface with other ceramic molded bodies). Machining may be performed after degreasing.

[0074] In the ceramic degreased body manufacturing process, multiple ceramic molded bodies are degreased at a predetermined temperature and for a predetermined time to produce multiple ceramic degreased bodies.

[0075] The ceramic molded body is heat-treated, for example, at a temperature of 500°C to 900°C to become a degreased ceramic body. The degreasing time is preferably 1 hour to 120 hours. An air furnace or a nitrogen atmosphere furnace can be used for degreasing, but an air furnace is preferred in order to remove organic components of the binder.

[0076] In the laminate formation process, heater electrodes and, if necessary, other electrodes, via materials, and wiring are prepared and combined with multiple degreased ceramic bodies to form multiple laminates in a flat plate shape. The multiple laminates may, for example, have a substrate mounting surface on their upper surface and include laminates with other electrodes embedded, laminates with heater electrodes embedded, and laminates with wiring embedded. A laminate may consist of a single degreased ceramic body. The other electrodes, via materials, and wiring are formed by foils, thin sheets, wires, meshes, or porous materials of molybdenum or tungsten, paste filling, or printing.

[0077] The heater electrodes are prepared in a shape that matches the design of the electrode embedding member. The shape of the heater electrodes can be in various forms, such as mesh or foil. The material can also be in various forms, such as molybdenum or tungsten.

[0078] In the laminate firing process, the formed laminates are fired under uniaxial pressure in the direction of the laminate to form base material precursors. Although the firing conditions vary depending on the material, when using ceramics mainly composed of AlN, the pressing force is preferably 1 MPa or more. The firing temperature is preferably between 1700°C and 2000°C. The firing time is preferably between 1 hour and 12 hours, and more preferably between 1 hour and 5 hours. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but it may also be an atmosphere such as a vacuum. As a result, one or more degreased ceramic bodies are sintered in each laminate to form a ceramic sintered body, which is then integrated to obtain multiple base material precursors.

[0079] Multiple substrate precursors include, for example, substrate precursors with other electrodes embedded, substrate precursors with heater electrodes embedded, and substrate precursors with wiring embedded. Figures 17(a) to 17(d) and 18 are schematic cross-sectional views showing one stage in the manufacturing process of the electrode-embedded member. Figure 17(a) shows cross-sections of substrate precursor 101 with other electrodes embedded, substrate precursor 102 with heater electrodes embedded, and substrate precursor 103 with wiring embedded. Figure 17 shows the production of a substrate using three substrate precursors, but the number of substrate precursors may be two or four or more depending on the design of the electrode-embedded member.

[0080] In the substrate precursor processing step, each of the multiple substrate precursors is processed as needed. For example, grooves that will become cavities after joining are formed, or holes are made at the positions where vias will be placed and filled with via material. Figure 17(b) shows a cross-section of substrate precursor 102 in which grooves 105 that will become cavities after joining are formed. It also shows a cross-section of substrate precursors 102 and 103 in which holes 107 are made at the positions where vias will be placed and filled with via material. In Figure 17, cavities are formed when other substrate precursors cover the grooves 105, but cavities may also be formed when grooves formed in two separate substrate precursors combine. Using this method, cavities of various shapes can be formed.

[0081] In the substrate precursor bonding process, multiple substrate precursors are bonded together to produce a substrate. Bonding can be performed using either a bonding material or a bonding method without a bonding material. Figure 17(c) shows the arrangement of multiple substrate precursors before bonding. Figure 17(d) shows the substrate after bonding. These bonding methods can be applied to the method of bonding electrode embedding members and support members to produce a substrate holding member.

[0082] First, a bonding method using a bonding material will be described. First, prepare the bonding material and apply it to at least one end face of the substrate precursor to be bonded. The end face of the substrate precursor to be bonded should preferably have a surface roughness Ra of 1.6 μm or less, and more preferably be polished to 0.4 μm or less. The thickness of the bonding material to be applied should preferably be between 5 μm and 30 μm.

[0083] Next, multiple substrate precursors are placed and heated while applying pressure perpendicular to the substrate mounting surface. The bonding conditions vary depending on the material, but when using ceramics mainly composed of AlN, the applied pressure is preferably 5 kPa or more. The heating temperature is preferably 1500°C to 1800°C. The heating time is preferably 0.5 hours to 5 hours. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but it may also be an atmosphere such as a vacuum. This allows multiple substrate precursors to be bonded together.

[0084] The bonding material can be anything that can bond the substrate precursors together. For example, if the substrate precursors are formed from ceramics mainly composed of AlN, the bonding material may be a paste of mixed powder containing at least Y2O3 powder in addition to AlN powder, which has the same main component. Alternatively, the bonding material may be a paste containing 90 wt% to 95 wt% AlN, 5 wt% or more Y2O3, and containing CaO, MgO, ZrO2, or SiO2 as needed to adjust the temperature at which it melts during bonding.

[0085] Next, a bonding method that does not use a bonding material will be described. First, multiple substrate precursors are arranged. It is preferable that the end faces of the substrate precursors to be bonded be polished to a surface roughness Ra of 0.1 μm or less. Next, the substrates are heated while applying pressure perpendicular to the substrate mounting surface. Bonding conditions vary depending on the material, but when using ceramics mainly composed of AlN, the applied pressure is preferably 1 MPa or more. The heating temperature is preferably 1600°C to 2000°C. The heating time is preferably 0.5 hours to 6 hours. The heating atmosphere is, for example, a nitrogen or inert gas atmosphere, but it may also be an atmosphere such as a vacuum. This allows multiple substrate precursors to be bonded.

[0086] In the base material processing process, the outer shape of the base material is processed. If necessary, pin-shaped protrusions are formed. Additionally, terminal holes for connecting terminals are drilled at predetermined positions on the underside.

[0087] Then, the terminals are connected to the terminal holes using brazing material or the like. The terminals can be made of materials such as Ni. The brazing material can be made of materials such as Au brazing material. Figure 18 shows a cross-section of a substrate with pin-shaped protrusions formed and terminals connected.

[0088] Furthermore, a ceramic calcined body manufacturing step may be included between the ceramic degreased body manufacturing step and the laminate formation step. If a ceramic calcined body manufacturing step is included, the ceramic degreased body is calcined at a predetermined temperature to produce the ceramic calcined body. This allows for higher dimensional accuracy of the electrode embedded member. The calcination conditions vary depending on the material, but when using ceramics mainly composed of AlN, the calcination temperature is preferably 1200°C to 1700°C. The calcination time is preferably 0.5 hours to 12 hours. The calcination atmosphere is preferably a nitrogen or inert gas atmosphere, but an atmosphere such as vacuum may also be used. If a calcined body manufacturing step is included, machining may be performed after the calcined body manufacturing step.

[0089] Furthermore, in the method described above, the substrate precursor is formed from a ceramic sintered body and then joined together to form the substrate. However, the substrate precursor may also be formed from a ceramic calcined body and then joined together while sintering to produce the substrate. In addition, if the structure of the cavities or wiring is simple, the substrate can also be produced by processing a degreased ceramic body, laminating it, and sintering it. When the structure of the cavities or wiring is complex, when flow channels are provided, or when high dimensional accuracy of the cavities is required, the method of joining ceramic sintered bodies is preferable.

[0090] In this way, an electrode embedding member can be manufactured that can provide a sharp temperature gradient on the substrate on which it is placed.

[0091] [Manufacturing method for substrate holding member] Next, a method for manufacturing a substrate holding member according to an embodiment of the present invention will be described. The method for manufacturing a substrate holding member according to an embodiment of the present invention includes an electrode embedding member preparation step, a support member molded body formation step, a support member degreasing body manufacturing step, a support member firing step, and a joining step.

[0092] In the electrode embedding member preparation step, the electrode embedding member manufactured as described above is prepared. When manufacturing the substrate holding member, the drilling of the terminal holes in the electrode embedding member may be performed after the joining step with the support member. Furthermore, it is preferable to connect the terminals after the joining step with the support member.

[0093] In the support member molded body formation process, for example, a support member molded body is formed from ceramic raw material powder mainly composed of AlN. The method for producing the ceramic raw material powder and the method for forming the support member molded body may be the same as in the ceramic molded body formation process. It is preferable that the ceramic raw material powder does not contain sintering aids.

[0094] In the process of manufacturing the degreased support member, the molded support member is degreased at a predetermined temperature and for a predetermined time to produce the degreased support member. The numerical range of the degreasing conditions for the molded support member may be the same as in the process of manufacturing the degreased ceramic body in the method for manufacturing the electrode embedded member. The process of manufacturing the degreased support member may be performed simultaneously with the process of manufacturing the degreased ceramic body.

[0095] In the support member firing process, the degreased support member is fired to create the support member that supports the ceramic substrate. The firing conditions vary depending on the material, but when using ceramics mainly composed of AlN, it is preferable to fire the support member at atmospheric pressure. The firing temperature is preferably between 1800°C and 2000°C. The firing time is preferably between 1 hour and 12 hours. The firing atmosphere is, for example, a nitrogen or inert gas atmosphere, but it may also be an atmosphere such as a vacuum.

[0096] In the joining process, the electrode embedding member and the support member are joined together. The joining method described above can be used for this joining process.

[0097] If the electrode embedding member does not have terminal holes, terminal holes will be provided after joining it to the support member. If necessary, pin-shaped protrusions will be formed. Then, the terminals will be connected to the terminal holes using brazing material. The terminals can be made of materials such as Ni. The brazing material can be made of materials such as Au brazing material.

[0098] In this way, a substrate holding member can be manufactured that can provide a sharp temperature gradient to the substrate on which it is placed.

[0099] [Examples and Comparative Examples] (Example 1) Example 1 is a substrate holding member in which four arc-shaped cavities are formed, as shown in Figure 16. The base material and support member are made of ceramic sintered bodies mainly composed of aluminum nitride (AlN). For the heater electrodes, Mo mesh (wire diameter 0.1 mm) processed into an arc-based shape was used. The inner circumference heater electrode embedded in the inner circumference heater electrode region was shaped to have an outer diameter within a range of approximately 210 mm. The outer circumference heater electrode embedded in the outer circumference heater electrode region was shaped to have an inner diameter within a range of approximately 225 mm and an outer diameter within a range of approximately 300 mm.

[0100] The high-frequency electrodes were made of 0.1 mm thick Mo foil with an outer diameter of approximately 300 mm. The high-frequency electrodes were embedded in a position closer to the top surface of the substrate than to the ceiling of the cavity. The arc-shaped cavity was formed with a width of 2 mm so that the center line of the cavity was midway between the area where the two heater electrodes were embedded (φ217.5 mm). Furthermore, the position of the cavity was formed such that the distance T1 between the ceiling of the cavity and the top surface of the substrate after blasting was 2 mm, and the distance T2 between the bottom of the cavity and the bottom surface of the substrate was 5 mm.

[0101] Three substrate precursors were joined together to form an electrode embedding member, which is roughly a disc-shaped structure with a diameter of φ310 mm and a thickness of 25 mm, in which the heater electrode and high-frequency electrode described above are embedded in the substrate. A support member was also prepared. The electrode embedding member and the support member were then joined together. The joining of the three substrate precursors and the joining of the electrode embedding member and the support member were performed without the use of any bonding material.

[0102] After joining the electrode embedding member and the support member, multiple pin-shaped protrusions were formed by blast processing. The multiple pin-shaped protrusions were formed concentrically in an area within φ290 mm from the center of the base material, with a diameter of φ2 mm and a height of 150 μm from the top surface. The surface roughness Ra of the multiple pin-shaped protrusions was set to 0.1 μm.

[0103] The inner heater electrode was connected to a terminal by drilling a terminal hole in the substrate from the bottom and inserting a Ni terminal. The outer heater electrode was connected to a conductive layer (wiring) of Mo embedded between the bottom of the cavity and the bottom surface of the substrate via a via structure. The conductive layer was then connected to a terminal by drilling a terminal hole in the substrate from the bottom and inserting a Ni terminal. The heater electrodes were connected to the heater power supply by connecting separate heater power supplies to each of the two heater electrodes via terminals, allowing for power adjustment. The high-frequency electrode was connected to a terminal by drilling a terminal hole in the substrate from the bottom and inserting a Ni terminal. All terminals were formed to be housed inside the cylinder of the support member.

[0104] (Comparative Example 1) Comparative Example 1 was manufactured under the same conditions as Example 1, except that no cavity was formed.

[0105] In Example 2, the substrate holding member was manufactured under the same conditions as in Example 1, except that the cavity was formed so that T1 was 5 mm and T2 was 6 mm.

[0106] In Example 3, the substrate holding member was manufactured under the same conditions as in Example 1, except that the cavity was formed so that T1 was 8 mm and T2 was 6 mm.

[0107] In Example 4, the substrate holding member was manufactured under the same conditions as in Example 1, except that the width L of the cavity was 5 mm and the position of the cavity was such that T1 was 3 mm and T2 was 3 mm.

[0108] Example 5 had an opening on the underside of the substrate, with one channel forming in each cavity that communicated with the cavity. Otherwise, the substrate holding member was manufactured under the same conditions as in Example 1. A vacuum evacuation device was connected to the opening of the channel. The evaluation test described later was then performed while maintaining the air pressure inside the cavity at less than 10 Pa by discharging the gas from inside the cavity through the channel. Note that the inside of the cavity during the evaluation tests in Examples 1 to 4 was under an N2 atmosphere and 1 atmosphere.

[0109] In Example 6, a substrate holding member was fabricated under the same conditions as in Example 5. However, a gas supply device was connected to the opening of the flow path. The evaluation test was then conducted by supplying He from the flow path into the cavity, thereby maintaining the air pressure inside the cavity at 13332 Pa.

[0110] (Evaluation method for substrate holding members) A comparative example substrate holder was placed inside the chamber. A wafer for substrate temperature measurement (300 mm in diameter x 0.75 mm thick), with multiple thermocouples arranged in the outer and inner regions, was placed on the substrate mounting surface of the substrate holder. The power applied to the inner and outer heater electrodes was adjusted in a vacuum so that the inner and outer thermocouples embedded in the substrate holder reached 500°C, respectively. After the heater temperature reached a steady state, the temperature was measured using the wafer for substrate temperature measurement. The power at this time was then recorded.

[0111] In the substrate holding member of the embodiment, the power at this time was applied to the inner and outer heater electrodes, respectively. The temperatures of the outer and inner surfaces of the substrate were then measured using a substrate temperature measuring wafer. In other words, the extent to which a temperature gradient could be created between the outer and inner substrate temperatures by providing a cavity was evaluated.

[0112] (Evaluation of substrate holding members) In the comparative example substrate holder without a cavity, the substrate temperature was made uniform by adjusting the power on the outside and inside. However, by providing a cavity as in the present invention, even when the same power was applied as in the comparative example, the substrate temperature on the outside was increased compared to the inside. In other words, it was confirmed that the horizontal diffusion of heat from the heater electrode is suppressed by the cavity, and a temperature gradient can be created on the surface of the substrate.

[0113] Comparing the examples, it was found that as T1+T2 increased, the temperature difference decreased. In the examples, the parallel distance D between the top and bottom surfaces of the substrate was constant, so it is presumed that as (T1+T2) / D increased, the horizontal diffusion of heat increased. Furthermore, Examples 5 and 6 confirmed that the temperature distribution of the substrate can also be adjusted by adjusting the gas pressure in the cavity.

[0114] Furthermore, the high-frequency electrodes were unaffected by the cavities in any of the substrate holding members, allowing for a smooth plasma process on the substrate. Therefore, it was confirmed that the position and size of the cavities can be varied depending on the design of the substrate holding member.

[0115] Based on the above, it has been confirmed that the electrode embedding member and substrate holding member of the present invention can provide a sharp temperature gradient to the substrate on which they are placed.

[0116] The present invention is not limited to the embodiments described above, and it goes without saying that it extends to various modifications and equivalents that fall within the spirit and scope of the present invention. Furthermore, the structure, shape, number, position, size, etc., of the components shown in each drawing are for illustrative purposes only and may be modified as appropriate. [Explanation of Symbols]

[0117] 10 Base material 12 Top side 14 Bottom side 16 center 18 End 20 Heater electrodes 21 Inner side heater electrode 21a Inner side heater electrode region 22 Outer peripheral heater electrode 22a Outer peripheral heater electrode region 23 Gap heater electrode 23a Gap heater electrode region 24 Heater electrode layer 26 Upper end surface 28 Lower end surface 30 cavities 32 Ceiling section 34 Bottom 40 Pin-shaped protrusions Terminals 50 and 51 52 terminal holes 60 Wiring 62 Beer 70 Other electrodes 80 channels 82 Opening 100 Electrode embedding member 101, 102, 103 Base material precursor 105 Groove 107 holes 110 Support member 200 Substrate holding member

Claims

1. An electrode embedding member, A substrate formed from a ceramic sintered body, The substrate comprises a heater electrode embedded in the substrate, The substrate has one or more tubular cavities inside the substrate. In the vertical cross-section of the substrate, the ceiling of the cavity is located closer to the upper surface of the substrate than the upper end surface of the heater electrode layer in which the heater electrode is embedded, and the bottom of the cavity is located closer to the lower surface of the substrate facing the upper surface than the lower end surface of the heater electrode layer. The heater electrode is divided into multiple regions by the cavity, When the parallel distance between the upper surface and the lower surface of the substrate is D, the distance between the ceiling of the cavity and the upper surface of the substrate is T1, and the distance between the bottom of the cavity and the lower surface of the substrate is T2, 0 < (T1 + T2) / D ≤ 0.5, and T1 ≤ T2 An electrode embedding member characterized by being such.

2. The electrode embedding member according to claim 1, characterized in that the cavity, when viewed through from the upper surface, includes an annular, linear, or a combination thereof shape.

3. The electrode embedding member according to claim 1 or 2, characterized in that the cavity, when viewed through from the upper surface, includes the shape of a plurality of arcs.

4. The electrode embedding member according to any one of claims 1 to 3, characterized in that the cavity, when viewed through the substrate from above, includes a plurality of concentric annular or arc-shaped forms.

5. The electrode embedding member according to any one of claims 1 to 4, characterized in that the substrate is further embedded with an electrostatic adsorption electrode or a high-frequency electrode.

6. The electrode embedding member according to claim 5, characterized in that the electrostatic adsorption electrode or the high-frequency electrode is embedded in a position closer to the upper surface of the substrate than the ceiling portion of the cavity.

7. The electrode embedding member according to any one of claims 1 to 6, characterized in that the upper end surface of the heater electrode layer is at a distance of 1 mm or more and 8 mm or less from the upper surface.

8. The substrate has a channel with an opening on the surface of the substrate, The electrode embedding member according to any one of claims 1 to 7, characterized in that the cavity is in communication with the flow path.

9. The electrode embedding member according to any one of claims 1 to 8, characterized in that the heater electrode is divided into a plurality of regions to which different power can be applied.

10. A substrate holding member, An electrode embedding member according to any one of claims 1 to 9, A substrate holding member characterized by comprising a support member joined to the lower surface of the substrate and supporting the electrode embedding member.

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