Semiconductor manufacturing equipment

Abstract

To provide a semiconductor manufacturing device capable of more accurately cutting a workpiece.SOLUTION: A semiconductor manufacturing device according to an embodiment comprises a table, a shaft, a sensor, and a first control unit. The table includes a first surface on which a workpiece is placed, and can rotate around a rotational shaft along a first direction approximately perpendicular to the first surface. The shaft holds a blade for cutting the workpiece so as to be rotatable and movable. The sensor measures the thickness of a workpiece in the region to be cut by the blade. The first control unit controls the rotation and movement of the shaft. The first control unit controls the movement of the blade in the first direction on the basis of the measurement results of the sensor.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present embodiment relates to a semiconductor manufacturing apparatus. [Background Art]

[0002] In the manufacturing process of a semiconductor device, the outer peripheral edge of a semiconductor wafer may be removed to a predetermined depth (edge trimming). Trimming is performed, for example, by cutting using a blade. [Prior Art Document] [Patent Document]

[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2012-028554 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] To provide a semiconductor manufacturing apparatus capable of performing cutting with higher precision. [Means for Solving the Problem]

[0005] The semiconductor manufacturing apparatus according to the present embodiment includes a table, a shaft, a sensor, and a first control unit. The table has a first surface on which a workpiece is placed, and is rotatable about a rotation axis along a first direction substantially perpendicular to the first surface. The shaft rotatably and movably holds a blade that cuts the workpiece. The sensor measures the thickness of the workpiece in a region to be cut by the blade. The first control unit controls the rotation and movement of the shaft. The first control unit controls the movement of the blade in the first direction based on the measurement result of the sensor. [Brief Description of the Drawings]

[0006] [Figure 1] It is a diagram showing an example of the configuration of the semiconductor manufacturing apparatus according to the first embodiment. [Figure 2]This is a top view showing an example of the table configuration according to the first embodiment. [Figure 3] This is a cross-sectional view showing an example of the table configuration according to the first embodiment. [Figure 4A] This figure shows an example of the operation of a semiconductor manufacturing apparatus according to the first embodiment. [Figure 4B] This figure, following Figure 4A, shows an example of the operation of semiconductor manufacturing equipment. [Figure 4C] Figure 4B is a diagram illustrating an example of the operation of semiconductor manufacturing equipment. [Figure 4D] Figure 4C is a diagram illustrating an example of the operation of semiconductor manufacturing equipment. [Figure 4E] Figure 4D is a diagram illustrating an example of the operation of semiconductor manufacturing equipment. [Figure 5] This figure shows an example of the blade descent amount in the first comparative example. [Figure 6] This figure shows an example of blade wear in the first comparative example. [Figure 7] This figure shows an example of backgrinding a semiconductor wafer according to the first comparative example. [Figure 8] This is a cross-sectional view showing an example of a semiconductor wafer according to the second comparative example. [Figure 9] This is a cross-sectional view showing an example of the table configuration according to the second embodiment. [Figure 10] This is a top view showing an example of the table configuration according to the third embodiment. [Figure 11] This is a cross-sectional view showing an example of the table configuration according to the third embodiment. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. These embodiments are not limiting to the present invention. The drawings are schematic or conceptual, and the proportions of each part may not necessarily be the same as those of actual objects. In the specification and drawings, elements similar to those described above with respect to previously shown drawings are denoted by the same reference numerals, and detailed explanations are omitted as appropriate.

[0008] FIG. 1 is a diagram showing an example configuration of a semiconductor manufacturing apparatus 1 according to the first embodiment. The semiconductor manufacturing apparatus 1, for example, removes the outer peripheral edge of a semiconductor wafer W to a predetermined depth (edge trimming). Note that illustration of the semiconductor wafer W is omitted in FIG. 1. The semiconductor wafer W is, for example, a silicon (Si) wafer. The semiconductor wafer W is an example of a workpiece.

[0009] The semiconductor manufacturing apparatus 1 includes a table 10, a shaft 20, a sensor 30, and a control unit 40.

[0010] Note that FIG. 1 shows an X direction and a Y direction which are parallel to the surface of the table 10 and perpendicular to each other, and a Z direction perpendicular to the surface of the table 10. In the present specification, the +Z direction is treated as an upward direction, and the -Z direction is treated as a downward direction. The -Z direction may or may not coincide with the direction of gravity.

[0011] The table 10 has a surface F10 on which the semiconductor wafer W is placed. The table 10 is rotatable about a rotation axis along the Z direction substantially perpendicular to the surface F10. The rotation axis of the table 10 is a central axis Ax passing through the center of the surface F10.

[0012] The shaft 20 holds a blade BL for cutting the semiconductor wafer W in a rotatable and movable manner. The shaft 20 is, for example, a spindle.

[0013] The sensor 30 measures the thickness of the semiconductor wafer W in a region cut by the blade BL. The region cut by the blade BL is, for example, the outer peripheral edge of the semiconductor wafer W as viewed from the Z direction.

[0014] Note that in the example shown in FIG. 1, two blades BL and two shafts 20 are provided. In this case, edge trimming is performed by rotating the table 10 by half a turn.

[0015] The sensor 30 measures the thickness of the semiconductor wafer W from the table 10 side, that is, from the side opposite to the blade BL with respect to the semiconductor wafer W. The sensor 30 is provided, for example, inside the table 10. The sensor 30 is provided at a position directly below the blade BL.

[0016] The sensor 30 is, for example, an optical sensor. More specifically, the sensor 30 is, for example, a spectral interference sensor. Note that the sensor 30 is not limited to an optical sensor, and may be an ultrasonic sensor or the like.

[0017] A control unit (first control unit) 40 controls the rotation and movement of the shaft 20. The control unit 40 also controls the movement of the blade BL in the Z direction based on the measurement results from the sensor 30. The control unit 40 controls the movement of the blade BL in the Z direction during at least one of the lowering of the blade BL at the start of cutting and the rotation of the table 10 during cutting. This enables cutting with higher precision.

[0018] A control unit (second control unit) 40 also controls the rotation of the table 10. After the blade BL is lowered and a part of the outer peripheral edge of the semiconductor wafer W is cut to a desired thickness, the table 10 rotates. Thereby, edge trimming of the semiconductor wafer W is performed.

[0019] Next, details of the configuration of the table 10 will be described.

[0020] Figure 2 is a top view showing an example of the configuration of the table 10 according to the first embodiment. Figure 3 is a cross-sectional view showing an example of the configuration of the table 10 according to the first embodiment. Note that the line A-A in Figure 2 indicates the cross-section corresponding to Figure 3, which is a cross-sectional view.

[0021] As shown in Figure 3, the sensor 30 is provided inside the table 10.

[0022] The semiconductor manufacturing apparatus 1 further includes a structure 50.

[0023] The structure 50 is provided so as to penetrate the table 10. In the example shown in Figure 3, the structure 50 is provided so as to penetrate from the opposite side of the table 10 to the side of surface F10. The structure 50 supports the sensor 30. The measurement results from the sensor 30 are transmitted to the control unit 40 by a cable (not shown) provided along the structure 50. The structure 50 is, for example, a columnar part that extends upright in the Z direction. The structure 50 may also be cylindrical with a cable passing through it. Alternatively, the structure 50 may be a cable.

[0024] The table 10 has recesses 11 and 12 and a transparent part 13.

[0025] The recess 11 is provided on the surface F10 so as to be spaced apart from the rotating table 10 on which the sensor 30 is located. The recess 11 has a width in the X direction and a depth in the Z direction that is capable of accommodating the sensor 30. The recess 11 is an example of a first recess.

[0026] The recess 12 is provided on the surface of the table 10 opposite to surface F10. The recess 12 has a width in the X direction that can accommodate the structure 50. The recess 12 is connected to the recess 11. That is, recesses 11 and 12 are also through holes in the table 10.

[0027] The transparent portion 13 is provided between the semiconductor wafer W and the sensor 30. The transparent portion 13 is provided along the surface F10. The transparent portion 13 contains a material that does not affect the thickness measurement of the sensor 30, which is an optical sensor. The transparent portion 13 includes, for example, glass.

[0028] As shown in Figure 2, the transparent portion 13 is provided around the outer circumference of the table 10, near the outer edge. The recesses 11 and 12 are provided in approximately the same positions as the transparent portion 13 in Figure 2. Therefore, when viewed from the Z direction, the recesses 11 and 12 and the transparent portion 13 are provided in a substantially annular shape centered on the center of the table 10 (central axis Ax). The recesses 11 and 12 are also grooves.

[0029] As shown in Figure 3, the sensor 30 and structure 50 are not in contact with the table 10. The sensor 30 is positioned independently of the rotating table 10. That is, the sensor 30 remains positioned below the blade BL while the table 10 rotates. As a result, even when the table 10 rotates, the sensor 30 remains positioned directly below the blade BL without moving. Consequently, the sensor 30 can continue to measure the thickness of the semiconductor wafer W while the table 10 rotates.

[0030] Next, we will explain the operation of the semiconductor manufacturing equipment 1.

[0031] Figures 4A to 4E show an example of the operation of the semiconductor manufacturing apparatus 1 according to the first embodiment. The upper part of Figures 4A to 4E is a cross-sectional view of the sensor 30 and its surroundings. The lower part of Figures 4A to 4E shows the positional relationship between the blade BL and the semiconductor wafer W. Note that in Figures 4A to 4E, one blade BL and one axis 20 are shown.

[0032] Furthermore, the table 10 and the semiconductor wafer W are movable in the Y direction, and the blade BL and axis 20 are movable in the X and Z directions.

[0033] First, as shown in Figure 4A, the control unit 40 moves the table 10 and moves the semiconductor wafer W. The control unit 40 moves the table 10 so that the sensor 30 within the table 10 is positioned directly below the blade BL.

[0034] Next, as shown in Figure 4B, the control unit 40 rotates and lowers the blade BL. More specifically, while the table 10 is stopped from rotating, the control unit 40 rotates the blade BL, which is located above the sensor 30, and lowers it in the Z direction (-Z direction). The control unit 40 stops the lowering of the blade BL when the measurement result of the sensor 30 is less than or equal to the first predetermined thickness T1. That is, the control unit 40 monitors the thickness of the semiconductor wafer W while the blade BL is lowering, and stops the lowering of the blade BL when the measurement result of the sensor 30 reaches the specified thickness. In other words, the endpoint of the trimming depth D can be detected. This makes it possible to perform cutting with higher precision.

[0035] Next, as shown in Figure 4C, the control unit 40 starts rotating the table 10. That is, the control unit 40 starts rotating the table 10 if the measurement result of the sensor 30 is less than or equal to the first predetermined thickness T1.

[0036] As the semiconductor wafer W is cut, the cutting edge of the blade BL gradually wears down. Since the position of the axis 20 remains unchanged, the more the cutting edge of the blade BL wears down, the shallower the trimming depth D becomes. As a result, the thickness of the semiconductor wafer W remaining after cutting (the remaining thickness), i.e., the measurement result of the sensor 30, becomes a larger value.

[0037] Next, as shown in Figure 4D, the thickness of the semiconductor wafer W reaches a second predetermined thickness T2. The second predetermined thickness T2 is thicker than the first predetermined thickness T1.

[0038] Next, as shown in Figure 4E, the control unit 40 lowers the blade BL in the Z direction if the measurement result of the sensor 30 is greater than or equal to the second predetermined thickness T2 while the blade BL and table 10 are rotating, that is, while the semiconductor wafer W is being cut. In other words, the control unit 40 monitors the thickness of the semiconductor wafer W even after the table 10 has started to rotate. If the thickness of the semiconductor wafer W increases, the control unit 40 lowers the blade BL, for example, until the thickness of the semiconductor wafer W reaches the first predetermined thickness T1. Note that the height of the end point of the blade BL's descent is not limited to the height corresponding to the first predetermined thickness T1. This allows for real-time monitoring and adjustment of the thickness of the semiconductor wafer W during the cutting of the semiconductor wafer W. Note that the operating conditions such as the blade BL's descent speed in Figure 4E are the same as, for example, the operating conditions in Figure 4B.

[0039] As described above, according to the first embodiment, the sensor 30 measures the thickness of the semiconductor wafer W in the area to be cut by the blade BL. The control unit 40 controls the movement of the blade BL in the Z direction based on the measurement result of the sensor 30. This enables more precise cutting.

[0040] Note that the number of blades BL, i.e., axes 20, is not limited to the example shown in Figure 1. For example, if there is one blade BL, edge trimming is performed by rotating the table 10 one full turn. If there are four blades BL, edge trimming is performed by rotating the table 10 a quarter turn.

[0041] Furthermore, the number of sensors 30 corresponds to the number of blades BL. For example, if there is one blade BL, one sensor 30 is provided. If there are four blades BL, four sensors 30 are provided.

[0042] (Comparative Example 1) Figure 5 shows an example of the amount of blade BL descended using the first comparative example.

[0043] In the first comparative example's method for controlling the trimming depth D, the position information of the blade tip BL is stored during the previous setup. Setup includes, for example, the installation and adjustment of equipment such as the blade BL. In the first comparative example, the amount of downward movement of the blade BL is determined from the relationship (difference) between the position information of the blade tip BL and the upper surface position of the semiconductor wafer W, which is measured separately, and the set trimming depth D. However, in this case, the position information of the blade tip BL is not updated until the next setup. Therefore, the amount of downward movement does not change even if the blade BL is worn down and shortened.

[0044] Figure 6 shows an example of blade BL wear in the first comparative example.

[0045] As shown in Figure 6, when wear reduces the amount of material dug by the blade BL, the trimming depth D becomes shallower. In this case, variations in the trimming depth D may occur within the plane of the semiconductor wafer W, or between semiconductor wafers W. Furthermore, the position of the cutting edge of the blade BL may vary by, for example, several micrometers from setup to setup. This variation reduces the accuracy of the trimming depth D.

[0046] Figure 7 shows an example of backgrinding of a semiconductor wafer W according to the first comparative example.

[0047] The back surface (top surface) of the semiconductor wafer W is polished by a grinder G. During polishing, chipping may occur at the corners of the semiconductor wafer W. Chipping is the breaking of the edges of the semiconductor wafer W. If the trimming depth D is shallow, this chipping may occur near the semiconductor elements (not shown) on the bottom surface of the semiconductor wafer W, as shown in Figure 7. This may lead to adverse effects on the semiconductor elements.

[0048] In contrast, in the first embodiment, the thickness of the semiconductor wafer W is monitored by the sensor 30, and the blade BL can be controlled so that the thickness of the semiconductor wafer W is appropriate. As shown in Figures 4D and 4E, monitoring the thickness of the semiconductor wafer W during cutting can suppress variations in the trimming depth D due to wear of the blade BL. As a result, variations in the trimming depth D within the plane of the semiconductor wafer W or between semiconductor wafers W can be suppressed. Furthermore, as shown in Figure 4B, monitoring the thickness of the semiconductor wafer W at the start of cutting (detection of the end point of the trimming depth D) can suppress variations in the trimming depth D for each setup. As a result, it becomes easier to ensure a more appropriate trimming depth D, and chipping can occur at a position away from the semiconductor element.

[0049] (Comparative Example 2) Figure 8 is a cross-sectional view showing an example of a semiconductor wafer W according to the second comparative example.

[0050] In the method for controlling the trimming depth D according to the first comparative example, the upper surface position of the semiconductor wafer W is used as the reference point. Therefore, if the thickness of the semiconductor element E changes, the thickness of the semiconductor wafer W remaining after cutting (the remaining thickness) will also change.

[0051] Figure 8 shows the thickness Ta of the semiconductor wafer W remaining after cutting when the semiconductor element E is thin, and the thickness Tb of the semiconductor wafer W remaining after cutting when the semiconductor element E is thick. Thickness Tb is greater than thickness Ta. Therefore, when the semiconductor element E is thick, chipping occurs near the semiconductor element E on the underside of the semiconductor wafer W, similar to Figure 7.

[0052] In contrast, in the first embodiment, as shown in Figure 4B, by monitoring the thickness of the semiconductor wafer W at the start of cutting, variations in the trimming depth D due to the thickness of the semiconductor element E can be suppressed.

[0053] (Second Embodiment) Figure 9 is a cross-sectional view showing an example of the configuration of the table 10 according to the second embodiment. The second embodiment differs from the first embodiment in that a rotating body and rails are provided.

[0054] The semiconductor manufacturing apparatus 1 further comprises a rotating body 60.

[0055] The rotating body 60 is positioned between the surface of the recess 11 and the sensor 30, and supports the sensor 30. In the example shown in Figure 9, the rotating body 60 is positioned between the bottom surface of the recess 11 and the sensor 30. The rotating body 60 is attached to the sensor 30, for example.

[0056] The rotating body 60 is in contact with the surface inside the recess 11 and is rotatable in accordance with the rotation of the table 10. When the table 10 rotates, the rotating body 60 rotates. By providing the rotating body 60, the position of the sensor 30 can be made more stable while keeping it independent of the rotation of the table 10. This makes it possible to perform cutting with even higher precision.

[0057] The table 10 further includes rails 14. The rails 14 are provided on the surface within the recess 11 and are in contact with the rotating body 60. In the example shown in Figure 9, the rails 14 are provided on the bottom surface of the recess 11. The rails 14, like the recess 11, are provided around the outer circumference of the semiconductor wafer W.

[0058] By providing the rail 14, the rotation of the rotating body 60 and the support of the sensor 30 can be performed more appropriately. This allows for even higher precision cutting.

[0059] As in the second embodiment, a rotating body and rails may be provided. The semiconductor manufacturing apparatus 1 according to the second embodiment can obtain the same effects as the first embodiment.

[0060] (Third embodiment) Figure 10 is a top view showing an example of the configuration of table 10 according to the third embodiment. Figure 11 is a cross-sectional view showing an example of the configuration of table 10 according to the third embodiment. Note that the line BB in Figure 10 indicates a cross-section corresponding to the cross-sectional view in Figure 11.

[0061] The third embodiment differs from the first embodiment in that the measurement results of the sensor 30 are transmitted and received via wireless communication.

[0062] As shown in Figure 11, the sensor 30 is installed inside the table 10.

[0063] The semiconductor manufacturing apparatus 1 further comprises a wireless transmitting unit 70 and a wireless receiving unit 80.

[0064] The wireless transmission unit 70 transmits the measurement results from the sensor 30 wirelessly. The wireless transmission unit 70 is installed, for example, near the sensor 30.

[0065] The wireless receiver 80 receives the measurement results from the sensor 30 wirelessly from the wireless transmitter 70. The wireless receiver 80 is provided, for example, in the control unit 40.

[0066] The table 10 has a recess 15. The recess 15 is provided on the surface F10. The recess 15 has a width in the X direction and a depth in the Z direction that can accommodate the sensor 30 and the wireless transmitter 70. The recess 15 is an example of a second recess.

[0067] The sensor 30 is fixed within the recess 15. The sensor 30 and the wireless transmitter 70 are, for example, embedded within the recess 15. Therefore, the sensor 30 rotates together with the table 10. A vibration absorbing member may be provided between the table 10 and the sensor 30, for example.

[0068] As shown in Figure 10, the multiple transparent sections 13 are provided at intervals along the outer circumference near the outer edge of the table 10. The recesses 15 are provided in approximately the same positions as the transparent sections 13 in Figure 10. Therefore, when viewed from the Z direction, the recesses 15 and the transparent sections 13 are provided at intervals along a roughly circular ring centered on the center (central axis Ax) of the table 10. The recesses 15 are also grooves.

[0069] The number of recesses 15 corresponds to the number of sensors 30. In the example shown in Figure 10, four sensors 30 are provided.

[0070] The sensor 30 rotates with the table 10, and measures the thickness of the semiconductor wafer W when the blade BL is positioned above the sensor 30. In other words, in the third embodiment, the thickness of the semiconductor wafer W can be monitored and adjusted when the table 10 rotates and the sensor 30 is positioned directly below the blade BL. In the example shown in Figure 10, four sensors 30 are provided at the top, bottom, left, and right positions of the table 10 as viewed from the Z direction. In this case, the thickness of the semiconductor wafer W is monitored and adjusted each time the table 10 rotates 1 / 4 turn.

[0071] In the third embodiment, there are fewer opportunities to adjust the thickness of the semiconductor wafer W compared to the first embodiment. However, if the frequency of adjusting the semiconductor wafer W is low, that is, if the wear of the cutting edge of the blade BL progresses slowly, the thickness of the semiconductor wafer W can be adjusted in substantially the same way as in the first embodiment, even in the third embodiment.

[0072] As in the third embodiment, the measurement results of the sensor 30 may be transmitted and received by wireless communication. The semiconductor manufacturing apparatus 1 according to the third embodiment can obtain the same effects as the first embodiment.

[0073] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents.

[0074] (Note) The details of the above-described embodiment are provided below. (Note 1) The system further includes a second control unit that controls the rotation of the table, The semiconductor manufacturing apparatus includes a second control unit which starts rotating the table when the measurement result of the sensor is less than or equal to the first predetermined thickness. (Note 2) A semiconductor manufacturing apparatus in which the number of sensors corresponds to the number of blades. (Note 3) A semiconductor manufacturing apparatus wherein the sensor rotates together with the table, and measures the thickness of the workpiece when the blade is positioned above the sensor. (Note 4) The sensor is provided inside the table, A semiconductor manufacturing apparatus further comprising a structure that penetrates the table and supports the sensor. (Note 5) The sensor is provided inside the table, The semiconductor manufacturing apparatus comprises a table having a first recess provided on the first surface such that the sensor is spaced apart from the table on which it rotates. (Note 6) The system further comprises a rotating body that contacts the surface within the first recess and is rotatable in accordance with the rotation of the table, The rotating body supports the sensor and is part of the semiconductor manufacturing apparatus as described in Appendix 5. (Note 7) The semiconductor manufacturing apparatus according to Appendix 6, wherein the table has rails provided on the surface within the first recess and in contact with the rotating body. (Note 8) A wireless transmission unit that wirelessly transmits the measurement results of the aforementioned sensor, A wireless receiving unit that wirelessly receives the measurement results of the sensor from the wireless transmitting unit, Semiconductor manufacturing equipment that is further equipped with these features. (Note 9) The semiconductor manufacturing apparatus according to Appendix 8, wherein the sensor is fixed in a second recess provided on the first surface. (Note 10) A semiconductor manufacturing apparatus in which the region cut by the blade is the outer edge of the workpiece as viewed from the first direction. [Explanation of Symbols]

[0075] 1 Semiconductor manufacturing equipment, 10 Table, 11 Recess, 12 Recess, 14 Rail, 15 Recess, 20 Axis, 30 Sensor, 40 Control unit, 50 Structure, 60 Rotating body, 70 Wireless transmitter, 80 Wireless receiver, Ax Central axis, BL Blade, D Trimming depth, F10 Surface, T1 First predetermined thickness, T2 Second predetermined thickness, W Semiconductor wafer

Claims

1. A table having a first surface on which a workpiece is placed, and rotatable on a rotation axis along a first direction substantially perpendicular to the first surface, A shaft that holds the cutting blade for the workpiece so that it can rotate and move, A sensor for measuring the thickness of the workpiece in the area cut by the blade, A first control unit for controlling the rotation and movement of the shaft, the first control unit for controlling the movement of the blade in a first direction based on the measurement results of the sensor, Equipped with, The table has a first recess provided on the first surface, which is provided in a substantially annular shape with respect to the center of the table when viewed from the first direction, The sensor is provided inside the first recess so as to be separated from the rotating table, The table is further provided with a structure that penetrates the table and supports the sensor, The semiconductor manufacturing apparatus comprises a sensor that continuously measures the thickness of the workpiece in the area being cut by the blade while the table is rotating.

2. The first control unit, while the rotation of the table is stopped, rotates the blade located above the sensor and lowers it in the first direction. The semiconductor manufacturing apparatus according to claim 1, wherein the first control unit stops the descent of the blade when the measurement result of the sensor is less than or equal to a first predetermined thickness.

3. The semiconductor manufacturing apparatus according to claim 1, wherein the first control unit lowers the blade in the first direction when the measurement result of the sensor is greater than or equal to a second predetermined thickness while the blade and the table are rotating.

4. The semiconductor manufacturing apparatus according to claim 3, wherein the sensor remains positioned below the blade during the rotation of the table.

5. The semiconductor manufacturing apparatus according to claim 1, wherein the sensor is an optical sensor or an ultrasonic sensor.

6. The table further comprises a rail provided on the surface within the first recess, The semiconductor manufacturing apparatus according to claim 1, further comprising a rotating body that is rotatable in accordance with the rotation of the table so as to be in contact with the rail and to support the sensor.

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