Steering wheel

Abstract

Provided is a display device having a novel configuration. The present invention comprises a plurality of display panels, a fixing member having a curved surface, and a casing for storing the fixing member. The display panel has a display portion having a pixel circuit, a non-display portion provided so as to surround the display portion, and a gate driver circuit and source driver circuit for driving the pixel circuit. The gate driver circuit is provided at a position overlapping with the display portion. The source driver circuit is provided at a position overlapping with the non-display portion. The plurality of display panels are fixed along the curved surface of the fixing member.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, electronic device, or semiconductor device.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. The technical field of one aspect of the invention disclosed herein relates to a product, method, or method of manufacture. Alternatively, one aspect of the present invention relates to a process, machine, manufacture, or composition of matter. More specifically, examples of the technical field of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, methods for driving them, or methods for manufacturing them.

[0003] In this specification, the term "semiconductor device" refers to all devices that can function by utilizing semiconductor properties, and electro-optical devices, semiconductor circuits, and electronic devices are all considered semiconductor devices. [Background technology]

[0004] As a result of recent technological advancements, display devices are becoming increasingly commoditized, and in order to gain a competitive edge in this environment, there is a demand for products with higher added value.

[0005] For example, research and development is underway on display devices with excellent design and complex display surfaces by combining multiple display panels. Patent Document 1 discloses a configuration of a light-emitting device in which a developable surface is formed between curved sections by arranging multiple display panels along a frame. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2015-207556 [Overview of the project] [Problems that the invention aims to solve]

[0007] To create a product with higher added value, durability is desirable in addition to design. In particular, with display devices having complexly shaped surfaces, bending can lead to display malfunctions, potentially compromising usability or reliability.

[0008] One aspect of the present invention aims to provide a novel display device with superior convenience or reliability. Alternatively, it aims to provide a novel semiconductor device with superior convenience or reliability. Alternatively, it aims to provide a novel display device or a novel semiconductor device, etc.

[0009] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0010] One aspect of the present invention is a display device comprising a plurality of display panels, a fixed member having a curved surface, and a housing in which the fixed member is housed, wherein each display panel has a display unit having a pixel circuit and a gate driver circuit for driving the pixel circuit, the gate driver circuit is provided in a position overlapping with the display unit, and the plurality of display panels are fixed along the curved surface of the fixed member.

[0011] One aspect of the present invention is a display device comprising a plurality of display panels, a fixed member having a curved surface, and a housing in which the fixed member is housed, wherein each display panel comprises a display section having a pixel circuit, a non-display section provided so as to surround the display section, and a gate driver circuit and a source driver circuit for driving the pixel circuit, the gate driver circuit being provided in a position overlapping with the display section, and the source driver circuit being provided in a position overlapping with the non-display section, and the plurality of display panels being fixed along the curved surface of the fixed member.

[0012] One aspect of the present invention is a display device comprising a plurality of display panels, a fixed member having a curved surface, and a housing in which the fixed member is housed, wherein each display panel comprises a display section having a pixel circuit, a non-display section provided so as to surround the display section, and a gate driver circuit and a source driver circuit for driving the pixel circuit, the gate driver circuit being provided in a position overlapping with the display section, and the source driver circuit being provided in a position overlapping with the non-display section, and the plurality of display panels being fixed along the curved surface of the fixed member such that they have an area overlapping with the non-display section.

[0013] One aspect of the present invention is a display device comprising a first display panel, a plurality of second display panels, a frustoconical fixing member having a flat surface and a curved surface, and a housing in which the fixing member is housed, wherein the first display panel and the second display panels each have a display unit having a pixel circuit and a gate driver circuit for driving the pixel circuit, the gate driver circuit is provided in a position overlapping with the display unit, the first display panel is fixed along the flat surface of the fixing member, and the plurality of second display panels are fixed along the curved surface of the fixing member.

[0014] One aspect of the present invention is a display device comprising a first display panel, a plurality of second display panels, a frustoconical fixing member having a flat surface and a curved surface, and a housing in which the fixing member is housed, wherein the first display panel and the second display panels each have a display section having a pixel circuit, a non-display section provided so as to surround the display section, and a gate driver circuit and a source driver circuit for driving the pixel circuit, wherein the gate driver circuit is provided in a position overlapping with the display section, and the source driver circuit is provided in a position overlapping with the non-display section, the first display panel is fixed along the flat surface of the fixing member, and the plurality of second display panels are fixed along the curved surface of the fixing member.

[0015] One aspect of the present invention is a display device comprising: a first display panel, a plurality of second display panels, a truncated cone-shaped fixing member having a flat surface and a curved surface, and a housing that accommodates the fixing member, wherein the first display panel and the second display panel each include a display portion having a pixel circuit, a non-display portion provided so as to surround the display portion, and a gate driver circuit and a source driver circuit that drive the pixel circuit, the gate driver circuit is provided at a position overlapping the display portion, the source driver circuit is provided at a position overlapping the non-display portion, the first display panel is fixed along the flat surface of the fixing member, and the first display panel and the plurality of second display panels are fixed along the curved surface of the fixing member such that they each have a region overlapping the non-display portion.

[0016] One aspect of the present invention is a display device comprising: a display panel having a cutout portion and a bent portion, a truncated quadrangular pyramid-shaped fixing member, and a housing that accommodates the fixing member, wherein the display panel includes a display portion having a pixel circuit, and a gate driver circuit that drives the pixel circuit, the gate driver circuit is provided at a position overlapping the display portion, the cutout portion of the display panel is arranged at a corner of an upper surface of the fixing member, and the bent portion is bent along a side of the upper surface of the fixing member.

[0017] Other aspects of the present invention are described in the following description of embodiments and the accompanying drawings. Effects of the Invention

[0018] One aspect of the present invention can provide a novel display device excellent in convenience or reliability. Alternatively, it can provide a novel semiconductor device excellent in convenience or reliability. Alternatively, it can provide a novel display device, a novel semiconductor device, or the like.

[0019] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects will become clear from the description in the specification, drawings, and claims, and it is possible to extract other effects from the description in the specification, drawings, and claims. [Brief explanation of the drawing]

[0020] Figures 1A to 1C illustrate examples of the configuration of a display device. Figures 2A to 2E illustrate examples of the configuration of a display device. Figures 3A and 3B illustrate an example of the configuration of a display device. Figures 4A to 4E illustrate examples of the configuration of a display device. Figures 5A to 5D illustrate examples of the configuration of a display device. Figure 6 illustrates an example of a display device configuration. Figures 7A and 7B illustrate examples of the configuration of a display device. Figures 8A and 8B illustrate examples of the configuration of a display device. Figures 9A to 9C illustrate examples of the configuration of a display device. Figures 10A and 10B illustrate an example of the configuration of a display device. Figures 11A to 11E illustrate examples of the configuration of a display device. Figures 12A to 12E illustrate examples of the configuration of a display device. Figures 13A to 13F illustrate examples of the configuration of a display device. Figures 14A and 14B illustrate an example of the configuration of a display device. Figures 15A and 15B illustrate an example of the configuration of a display device. Figures 16A to 16D illustrate examples of the configuration of a display device. Figures 17A to 17C illustrate examples of the configuration of a display device. Figures 18A to 18D illustrate examples of the configuration of a display device. Figures 19A to 19F illustrate examples of the configuration of a display device. Figures 20A to 20F illustrate examples of the configuration of a display device. Figures 21A and 21B illustrate an example of the configuration of a display device. Figure 22 illustrates an example of a display device configuration. Figures 23A to 23F illustrate examples of the configuration of a display device. [Modes for carrying out the invention]

[0021] Embodiments of the present invention are described below. However, it will be readily apparent to those skilled in the art that an embodiment of the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, an embodiment of the present invention is not to be interpreted as being limited to the contents of the embodiments shown below.

[0022] In this specification, the ordinal numbers "1st," "2nd," and "3rd" are used to avoid confusion of constituent elements. Therefore, they do not limit the number of constituent elements, nor do they limit the order of the constituent elements. For example, a constituent element referred to as "1st" in one embodiment of this specification may be referred to as "2nd" in another embodiment or in the claims. For example, a constituent element referred to as "1st" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0023] In drawings, identical elements, elements with similar functions, elements of the same material, or elements formed simultaneously may be given the same reference numeral, and repeated explanations may be omitted.

[0024] In this specification, for example, the power supply potential VDD may be abbreviated as potential VDD, VDD, etc. This also applies to other components (e.g., signals, voltages, circuits, elements, electrodes, wiring, etc.).

[0025] Furthermore, when the same designation is used for multiple elements, especially when it is necessary to distinguish them, identification designations such as "_1", "_2", "_n", and "_m,n" may be added to the designation. For example, the second wiring GL may be written as wiring GL_2.

[0026] (Embodiment 1) This embodiment describes a display device configuration that offers excellent convenience or reliability, including a display surface with superior design and a robust structure resistant to impacts.

[0027] Figure 1A is a perspective view illustrating a display device 10A according to one embodiment of the present invention. Figure 1B is an exploded schematic diagram of the display device 10A shown in Figure 1A. Figure 1C is a schematic diagram illustrating an example of the configuration of the display panel 11p of the display device 10A.

[0028] The display device 10A shown in Figure 1A has a housing 30 that houses a display panel 11 composed of multiple display panels 11p. The display panel 11 has a developable surface created by joining multiple display panels 11p together.

[0029] Figure 1A illustrates an example where a hemispherical display area is formed by connecting multiple display panels 11p. This configuration allows the display device 10A to have a display surface with superior design. While Figure 1A illustrates a configuration using eight display panels 11p, the design is not limited to this configuration.

[0030] The display device 10A shown in Figure 1B comprises a display panel 11 composed of multiple display panels 11p, a fixing member 20 having a curved surface 21, and a housing 30. Each display panel 11p is fitted with an FPC 12 (Flexible printed circuit) housed in the housing 30.

[0031] The fixing member 20, to which multiple display panels 11p are fixed, has a curved surface 21 corresponding to the developable surface created by joining the multiple display panels 11p together. By using plastic materials such as FRP (fiber-reinforced plastic), the fixing member 20 can be made lighter and a curved surface with excellent design can be formed. In addition, plastic substrates such as polyimide (PI), aramid, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), and silicone resin can be used as the fixing member 20. Furthermore, it is preferable that the curved surface 21 has high impact resistance so that the display panels 11p do not deform when touched.

[0032] The housing 30 has a configuration in which multiple display panels 11p are fixed along the curved surface 21 of the fixing member 20, and the non-display portion of the display panel 11, such as an FPC 12, is housed within it. This configuration makes it possible to create a display device with a curved display surface. For example, an airbag can be housed in the hollow portion of the housing 30.

[0033] Although not shown in Figure 1, a protective substrate may be provided on the display panel 11 to protect it. This protective substrate not only protects the surface of the display panel 11 but also increases the mechanical strength of the display device. The protective substrate should be made of a material that is translucent in at least the area overlapping with the display area. The protective substrate may also have light-shielding properties so that areas other than those overlapping with the display area are not visible. The same material as that used for the fixing member 20 can be used for the protective substrate. By providing a protective substrate on the display panel 11, the joints between multiple display panels 11p become less noticeable.

[0034] Figure 1C shows a display panel 11 in which multiple display panels 11p are connected. In Figure 1C, in addition to the FPC 12 shown in Figure 1B, a source driver circuit 13, a display unit 14, and a non-display unit 15 are also shown. In Figure 1B, as an example, a COG (Chip On Glass) method is shown in which the IC chip of the source driver circuit 13 is mounted on the substrate, but a COF (Chip on Film) method may also be used.

[0035] Furthermore, it is preferable that the multiple display panels 11p are separated into individual units. This configuration allows for the reduction of stress at the connection points between the display panels 11p when multiple display panels 11p are combined to form a hemispherical surface.

[0036] Figure 2A provides a detailed explanation of the display panel 11p shown in Figure 1C. In addition to the FPC 12, source driver circuit 13, display unit 14, and non-display unit 15 shown in Figure 1B, Figure 2A also shows the pixels 16 and gate driver circuit 17.

[0037] The display unit 14, on which the pixels 16 are provided, is equipped with a display device such as a light-emitting device and a pixel circuit for controlling the display by the display device. The non-display unit 15 is provided so as to surround the display unit 14 and is equipped with an FPC 12 and a source driver circuit 13.

[0038] The display device and pixel circuit provided in the display unit 14 are provided on a substrate. The substrate on which the display device and pixel circuit are provided is non-rectangular and flexible. When the hemispherical display surface shown in Figure 1A is configured with the display panel 11p, the bent region 17AR and the non-bent region 13AR shown in Figure 2A are provided, and in order to create a desired display surface that matches the curved surface 21 of the fixing member 20, it is preferable that the substrate be non-rectangular and flexible.

[0039] Examples of substrate materials include polyester resins such as PET and PEN, polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, PC resin, PES resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, PTFE resin, and ABS resin. In particular, it is preferable to use a material with a low coefficient of thermal expansion, and for example, polyamide-imide resin, polyimide resin, polyamide resin, and PET can be suitably used. In addition, substrates in which resin is impregnated into a fibrous material, and substrates in which inorganic fillers are mixed into the resin to lower the coefficient of thermal expansion can also be used. These substrate materials are preferable because, unlike glass and the like, the risk of fragments scattering when subjected to impact is reduced.

[0040] The flexible substrate may be constructed by laminating a layer made of the above material with at least one other layer, such as a hard coat layer (e.g., a silicon nitride layer) that protects the surface of the device from scratches, or a layer made of a material that can distribute pressure (e.g., an aramid resin layer).

[0041] Flexible substrates can be processed or cut into non-rectangular shapes. Pixel circuits and display devices may be formed directly on the flexible substrate, or transistors or light-emitting devices may be formed on a glass substrate, then peeled off the glass substrate and bonded to the flexible substrate using an adhesive layer. Various peeling and transposition methods exist, but are not particularly limited; known techniques may be used as appropriate. Various types of curing adhesives can be used for the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Adhesive sheets may also be used.

[0042] The display devices and pixel circuits provided in the display unit 14 are arranged in a matrix. In this embodiment, an organic EL element, which is a light-emitting device, is used as the display device.

[0043] Quantum dots can also be used as color conversion (wavelength conversion) materials for organic EL elements. Quantum dots are semiconductor nanocrystals with a diameter of several nanometers, and have a size of 1 × 10⁻¹⁶. 3 From 1 × 10 6 Quantum dots are composed of approximately 100 atoms. Because electrons, holes, and excitons are confined within a quantum dot, their energy states become discrete, and their energy shifts depending on their size. Therefore, even quantum dots made from the same material will emit different wavelengths depending on their size; the emission wavelength can be easily adjusted by changing the size of the quantum dot used.

[0044] Furthermore, the display unit 14 can also be equipped with touch panel functionality. It can be operated by the user touching it, waving their hand over it, or using gestures.

[0045] Furthermore, when using a fine metal mask (FMM) structure for light-emitting devices such as organic EL elements, it can be difficult to create varying degrees of detail within the surface. The FMM structure will be explained below.

[0046] To fabricate an FMM structure, a metal mask (also called an FMM) with openings is set opposite the substrate so that the EL material is deposited in the desired area during EL deposition. Then, EL deposition is performed through the FMM to deposit the EL material in the desired area. As the size of the substrate increases during EL deposition, the size and weight of the FMM also increase. In addition, the FMM may deform because heat is applied to it during EL deposition. Alternatively, there are methods that apply a certain tension to the FMM during EL deposition, so the weight and strength of the FMM are important parameters.

[0047] Therefore, when changing the resolution within the surface of the display panel 11p using an FMM, it is necessary to change the design of the FMM. However, when changing the design of the FMM, it is also necessary to consider the deformation of the FMM, making it extremely difficult to change the resolution within the display panel surface. On the other hand, in one embodiment of the present invention, since the display panel is manufactured using an MML (metal maskless) structure, it exhibits the excellent effect of easily changing the resolution within the display panel surface. In other words, the display panel of one embodiment of the present invention (for example, a non-rectangular flexible display panel) and the MML structure are very compatible. To put it another way, flexible display panels and the MML structure have a high affinity.

[0048] In this specification, devices fabricated using a metal mask or FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. In addition, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0049] The non-display area 15 is an area where pixels 16 are not provided, and a source driver circuit is provided in a position overlapping with the non-display area 15. The source driver circuit 13 is provided in the non-folding area 13AR of the non-display area 15. The gate driver circuit 17 can be provided in a position overlapping with the display area 14 by having a transistor manufactured using the same process as the pixel circuit of the pixel 16. An example of the configuration of the gate driver circuit 17 will be described later. By configuring the gate driver circuit 17 with a transistor manufactured using the same process as the pixel circuit, the gate driver circuit 17 can be made less susceptible to damage even when placed in the folding area 17AR. Furthermore, because the gate driver circuit 17 can be placed in the display area 14, each pixel can be driven even in a non-rectangular display area, resulting in a display device with excellent design.

[0050] Figures 2B to 2E illustrate an example configuration of the pixel 16 shown in Figure 2A. Pixel 16 has multiple subpixels. The subpixels function as light-emitting devices that function as a display device, or as light-receiving devices that function as photoelectric conversion elements.

[0051] In this specification, the smallest unit in which an independent operation takes place within a single "pixel" is conveniently defined as a "sub-pixel" for explanation purposes. However, "pixel" may be replaced with "region," and "sub-pixel" may be replaced with "pixel."

[0052] In the display device of this embodiment, the pixel 16 can be configured to have multiple sub-pixels, each having a light-emitting device that emits a different color from the others. For example, the pixel 16PIX shown in Figure 2B can be configured to have three types of sub-pixels. These three sub-pixels are 16R, 16G, and 16B, which are red (R), green (G), and blue (B). The sub-pixels may also be configured to support four or more colors.

[0053] Sub-pixel 16R has a light-emitting device that emits red light. Sub-pixel 16G has a light-emitting device that emits green light. Sub-pixel 16B has a light-emitting device that emits blue light.

[0054] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0055] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device.

[0056] Furthermore, in a display device having light-emitting and light-receiving devices in its pixels, for example, the pixel 16PIX shown in Figure 2C can be configured to have three types of sub-pixels (sub-pixels 16R, 16G, and 16B), as well as a sub-pixel 16PS with a light-receiving function. Because the pixel has a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image with all of the sub-pixels of the display device, some of the sub-pixels can emit light as a light source, while the remaining sub-pixels display an image. The pixel 16PIX may also have a sub-pixel having a light-emitting device that emits infrared light.

[0057] The sub-pixel 16PS has a light-receiving device. The wavelength of light detected by the sub-pixel 16PS is not particularly limited, but it is preferable that the light-receiving device of the sub-pixel 16PS is sensitive to the light emitted by the light-emitting device of the sub-pixel R, sub-pixel G, or sub-pixel B.

[0058] The light-receiving area of ​​the sub-pixel 16PS may be configured to be smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which helps to suppress blurring in the image and improve resolution. Therefore, by using the sub-pixel 16PS, high-definition or high-resolution imaging can be performed. For example, the sub-pixel 16PS can be used to perform imaging for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0059] Furthermore, the sub-pixel 16PS can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover-touch sensor, non-contact sensor, or touchless sensor). For example, it is preferable for the sub-pixel 16PS to detect infrared light. This enables touch detection even in dark places.

[0060] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device without the object directly touching it, in other words, to operate the display device without contact (touchless). This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0061] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels 16PS be provided on all pixels of the display device. On the other hand, when sub-pixels 16PS are used in touch sensors or near-touch sensors, etc., the accuracy required is not as high as when imaging fingerprints, so it is sufficient to provide them on some of the pixels of the display device. The detection speed can be increased by reducing the number of sub-pixels 16PS in the display device to fewer than the number of sub-pixels 16R, etc.

[0062] Figure 2D shows an example of a pixel circuit 16el applicable to sub-pixels 16R, 16G, and 16B having light-emitting devices, and Figure 2E shows an example of a pixel circuit 16ps applicable to a sub-pixel 16PS having a light-receiving device.

[0063] The pixel circuit 16el shown in Figure 2D includes a light-emitting device EL, transistors M11 and M12, and a capacitive element C11. Here, an example using a light-emitting diode as the light-emitting device EL is shown. In particular, it is preferable to use an organic EL element as the light-emitting device EL.

[0064] Transistor M11 has its gate electrically connected to wiring GL, one of its source or drain electrically connected to wiring SL, and the other of its source or drain electrically connected to one electrode of capacitive element C11 and the gate of transistor M12. One of the source or drain of transistor M12 is electrically connected to wiring EAL, and the other is electrically connected to the anode of light-emitting device EL and the other electrode of capacitive element C11. The cathode of light-emitting device EL is electrically connected to wiring ACL.

[0065] A constant potential is supplied to wiring EAL and wiring ACL, respectively. This allows the anode side of the light-emitting device EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M11 is controlled by a signal supplied to wiring GL and functions as a selection transistor to control the selected state of the pixel circuit 16el. Transistor M12 functions as a drive transistor that controls the current flowing to the light-emitting device EL according to the potential supplied to the gate. Although two transistors have been described for the pixel circuit 16el, it may also have three or more transistors.

[0066] The pixel circuit 16ps shown in Figure 2E includes a light-receiving device PS, transistors M15, M16, M17, M18, and a capacitive element C21. Here, an example is shown in which a photodiode is used as the light-receiving device PS.

[0067] The light-receiving device PS has its anode electrically connected to wiring ACL, and its cathode electrically connected to either the source or drain of transistor M15. Transistor M15 has its gate electrically connected to wiring TX, and its other source or drain is electrically connected to one electrode of capacitive element C21, one source or drain of transistor M16, and the gate of transistor M17. Transistor M16 has its gate electrically connected to wiring RS, and its other source or drain is electrically connected to wiring V11. Transistor M17 has its source or drain electrically connected to wiring V13, and its other source or drain is electrically connected to either the source or drain of transistor M18. Transistor M18 has its gate electrically connected to wiring SE, and its other source or drain is electrically connected to wiring WX. The other electrode of capacitive element C21 is electrically connected to wiring V12.

[0068] Furthermore, when a light-receiving device PS is provided, by arranging multiple gate driver circuits 17 as shown in Figure 2A, it becomes possible to sequentially select each transistor in the light-receiving device PS.

[0069] Constant potentials are supplied to wirings V11, V12, and V13, respectively. When the photodetector PS is driven in forward bias, a potential lower than the potential of wiring ACL is supplied to wiring V11. Transistor M16 is controlled by a signal supplied to wiring RS and has the function of resetting the potential of the node connected to the gate of transistor M17 to the potential supplied to wiring V11. Transistor M15 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector PS. Transistor M17 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M18 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading out the output according to the potential of the above node with an external circuit connected to wiring WX.

[0070] Note that while Figures 2D and 2E show transistors as n-channel transistors, p-channel transistors can also be used.

[0071] It is preferable that the transistors in the pixel circuit 16el and the transistors in the pixel circuit 16ps be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in the pixel circuit 16el and the transistors in the pixel circuit 16ps to be mixed within a single region and arranged periodically.

[0072] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitive elements in a position that overlaps with the light-receiving device PS or the light-emitting device EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0073] Here, it is preferable to use transistors in which a metal oxide (oxide semiconductor) is used in the semiconductor layer where the channel is formed, for transistors M11 and M12 in the pixel circuit 16el, and transistors M15 to M18 in the pixel circuit 16ps.

[0074] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be retained for a long period of time. For this reason, it is preferable to use transistors with oxide semiconductors for transistors M11, M15, and M16, which are connected in series with the capacitive element C11 or C21. Similarly, using transistors with oxide semiconductors for other transistors can reduce manufacturing costs. However, the present invention is not limited to this. Transistors using silicon in the semiconductor layer (hereinafter also referred to as Si transistors) may also be used.

[0075] Furthermore, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to, or 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0076] Furthermore, one embodiment of the present invention may have an OS transistor and a light-emitting element with an MML (metal maskless) structure. This configuration makes it possible to extremely reduce the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current). With this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, and a high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting elements, it is possible to achieve a display with virtually no light leakage that may occur during black display (also called true black display).

[0077] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. In addition, to achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have higher breakdown voltage between the source and drain, so a high voltage can be applied to the source-drain of an OS transistor. As a result, by using an OS transistor as the drive transistor included in the pixel circuit, a high voltage can be applied to the source-drain of the OS transistor, thereby increasing the amount of current flowing through the light-emitting device and increasing the luminescence brightness of the light-emitting device.

[0078] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, allowing for precise control of the current flowing to the light-emitting device. This enables precise control of the light-emitting brightness (increasing the number of grayscale levels in the pixel circuit).

[0079] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable constant current (saturation current) than Si transistors, even as the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, for example, even if there are variations in the current-voltage characteristics of a light-emitting device containing EL material, a stable constant current can be supplied to the light-emitting device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0080] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices." As a result, the display device including the pixel circuit can display clear and smooth images, and as a result, one or more of the following can be observed: image sharpness, image clarity, and a high contrast ratio. Furthermore, by configuring the drive transistors included in the pixel circuit to have an extremely low off-current, the black display performed by the display device can be a display with virtually no light leakage (true black display).

[0081] Furthermore, transistors M11, M12, M15 to M18 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0082] Furthermore, a configuration may be used in which one or more of transistors M11, M12, M15 to M18 are made of oxide semiconductors (OS transistors), and the others are made of silicon (Si transistors). Note that the Si transistors may be low-temperature polysilicon (LTPS) transistors (hereinafter referred to as LTPS transistors). A configuration using a combination of OS transistors and LTPS transistors is sometimes called LTPO. By using LTPO, it is possible to use LTPS transistors with high mobility and OS transistors with low off-current, thereby providing a display panel with high display quality.

[0083] Figures 3A and 3B illustrate examples of pulse output circuits and timing charts applicable to the gate driver circuit 17 described in Figure 2A. The pulse output circuits and timing charts described in Figures 3A and 3B are also effective for gate driver circuits that drive the photodetector PS.

[0084] Figure 3A shows an example of the circuit configuration of a pulse output circuit 17S applicable to the gate driver circuit 17. The pulse output circuit 17S shown in Figure 3A has transistors M21 to M24 and a capacitive element C31. The transistors and capacitive element of the pulse output circuit 17S are located in the region surrounded by the area where the aforementioned pixel circuit 16el or pixel circuit 16ps is provided (in Figure 3A, wiring SL_M to SL_M+5, wiring GL_N-1 to SL_N+1) (N and M are both natural numbers). Wiring VSSL is the wiring that provides the voltage VSS.

[0085] Figure 3B also illustrates the signals and voltages applied to each transistor or wiring, including the gate clock signal CK_A, the gate clock signal CK_B, the output signal applied to wiring GL_N, the gate start pulse GSP (or the output signal of the previous pulse output circuit) applied to wiring GL_N-1, and the output signal of the next pulse output circuit 17S applied to wiring GL_N+1. In Figure 3A, the node connected to transistors M21, M22, M23 and the capacitive element C31 is shown as netA.

[0086] Figure 3B is a timing chart illustrating the operation of the pulse output circuit 17S shown in Figure 3A. In Figure 3B, the symbols used for the wiring or signals in Figure 3A are replaced with the signals described in Figure 3B.

[0087] At time T1 in Figure 3B, CK_A is at a low level and CK_B is at a high level, causing GL_N-1 to become high and raising the voltage of netA. Then, at time T2, GL_N-1 is at a low level, so netA becomes floating. At time T2, CK_A is at a high level and CK_B is at a low level, so the voltage of the floating netA increases due to the capacitive coupling of the capacitive element C31. As a result, transistor M23 becomes conductive, and GL_N becomes high. At time T3, GL_N+1 becomes high, causing netA to become low, and CK_B becomes high, causing GL_N to become low.

[0088] Figures 4A to 4D illustrate modified examples of combining multiple display panels to create a display panel with a superior design.

[0089] As described above, the multiple display panels 11 shown in Figure 4A have a display section 14 and a non-display section 15. Figure 4B is a front view of the configuration in which the multiple display panels 11 shown in Figure 4A are arranged to form a hemispherical display surface. Figure 4C is a schematic cross-sectional view of Figure 4B when a portion is cut by a plane perpendicular to the z direction (dash-dotted line Z3-Z4).

[0090] In one embodiment of the present invention, as shown in Figure 4C, when the non-display areas 15 of adjacent display panels are superimposed, the area of ​​the region visible as a non-display area 15 on the hemispherical display surface can be reduced. Therefore, vertical or horizontal lines visible around the non-display area 15 can be suppressed.

[0091] Furthermore, in order to adjust the change in refractive index caused by overlapping the non-display sections 15, it is preferable to cover the display surface of the display panel 11 with a resin layer. This configuration will be explained with reference to the cross-sectional structure shown in Figure 4D. In Figure 4D, display panels 11a, 11b, and 11c are shown as display panels formed by overlapping the non-display sections 15.

[0092] As shown in Figure 4D, a translucent resin layer 331 can be provided to cover the upper surfaces of the display panels 11a to 11c. By covering the upper surfaces of the display panels 11a to 11c with the resin layer 331, the mechanical strength of the display panels can be increased. Furthermore, if the surface of the resin layer 331 is formed to be flat, the display quality of the image displayed in the display area can be improved. For example, a highly flat resin layer 331 can be formed by using a coating device such as a slit coater, curtain coater, gravure coater, roll coater, or spin coater.

[0093] Furthermore, it is preferable that the resin layer 331 has a refractive index n difference of 20% or less, preferably 10% or less, and more preferably 5% or less, between it and the substrate used on the display surface side of the display panels 11a to 11c. By using a resin layer 331 with such a refractive index, the refractive index step difference between the display panels 11a to 11c and the resin layer can be reduced, and light can be efficiently extracted to the outside. In addition, by providing a resin layer 331 with such a refractive index to cover the step difference between adjacent display panels, the step difference becomes less visible as vertical or horizontal stripes, thereby improving the display quality of the image displayed in the display area of ​​the display panel.

[0094] As the material used for the resin layer 331, a resin with high light transmittance is preferred, and for example, organic resins such as epoxy resin, aramid resin, acrylic resin, polyimide resin, polyamide resin, and polyamideimide resin can be used.

[0095] Furthermore, it is preferable to provide a protective substrate 300a on the display panels 11a to 11c via the resin layer 331. The protective substrate 300a not only protects the surface of the display device but also increases the mechanical strength of the display device. As the protective substrate 300a, a material that is translucent in at least the area overlapping with the display area is used. In addition, the protective substrate 300a may have light-shielding properties so that areas other than the area overlapping with the display area are not visible.

[0096] The protective substrate 300a may also function as a touch panel. Furthermore, if the display panels 11a to 11c are flexible and can be bent, it is preferable that the protective substrate 300a is similarly flexible.

[0097] Furthermore, the difference in refractive index n between the protective substrate 300a and the substrate used on the display surface side of the display panels 11a to 11c, or the resin layer 331, is preferably 20% or less, more preferably 10% or less, and more preferably 5% or less. The refractive index refers to the value for visible light, specifically light with a wavelength of 400 nm to 750 nm, and refers to the average refractive index for light having wavelengths within the above range. The average refractive index is the value obtained by dividing the sum of the measured refractive index values ​​for each light having wavelengths within the above range by the number of measurement points. The refractive index of air is assumed to be 1.

[0098] As the protective substrate 300a, a film-like plastic substrate such as polyimide (PI), aramid, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), nylon, polyetheretherketone (PEEK), polysulfone (PSF), polyetherimide (PEI), polyarylate (PAR), polybutylene terephthalate (PBT), or silicone resin can be used. Furthermore, it is preferable that the protective substrate 300a is flexible.

[0099] Furthermore, as shown in Figure 4D, a resin layer 333 may be provided on the side of the display panels 11a to 11c opposite to the display surface, and a protective substrate 300b may be provided via the resin layer 333. By sandwiching the display panels 11a to 11c between two protective substrates in this way, the mechanical strength of the display device can be further increased. Also, by making the resin layer 331 and resin layer 333 of the same thickness, and using materials of the same thickness for the protective substrates 300a and protective substrates 300b, multiple display panels can be positioned in the center of these laminates. For example, when bending a laminate including display panels, if the display panels are located in the center in the thickness direction, the lateral stress on the display panels due to the bending is relieved, and damage can be prevented.

[0100] In Figure 4D, a configuration is shown in which the area of ​​the non-display portion 15 is reduced by overlapping the non-display portion 15 of different display panels, but other configurations are also possible. For example, the display portion 14 and the non-display portion 15 may be arranged to overlap, as shown in Figure 4E. In this case, the non-display portion 15 is translucent, so that the image on the display portion 14 can be seen even if the display portion 14 is covered by the stepped portion. Therefore, the vertical or horizontal stripes in the non-display portion 15 can be made less visible.

[0101] As described above, by adopting one aspect of the present invention, a display device with high display quality can be provided. Alternatively, by adopting one aspect of the present invention, a display device with superior convenience or reliability can be provided. Alternatively, by adopting one aspect of the present invention, the degree of design freedom for the display device can be increased, and the design of the display device can be improved.

[0102] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0103] (Embodiment 2) In this embodiment, we will describe a configuration for a display device that is highly convenient or reliable, having a design-oriented display surface as well as a robust structure resistant to impacts, etc., which differs from that of Embodiment 1. Details of explanations that overlap with those of Embodiment 1 will be omitted, as they will be referenced from the previous explanation.

[0104] Figure 5A is a perspective view illustrating a display device 10B according to one embodiment of the present invention. Figure 5B is an exploded schematic diagram of the display device 10B shown in Figure 5A. Figure 5C is a schematic diagram illustrating an example configuration of the display panel 11a of the display device 10B. Figure 5D is a schematic diagram illustrating an example configuration of the display panel 11q of the display device 10B.

[0105] The display device 10B shown in Figure 5A has a housing 30 that houses a display panel 11, which consists of a display panel 11a and a plurality of display panels 11b. The display panel 11 has a developable surface created by joining the display panel 11a and the plurality of display panels 11b together.

[0106] Figure 5A illustrates an example in which a frustoconical display section is formed by connecting display panel 11a and multiple display panels 11b. This configuration allows the display device 10B to have a display surface with excellent design.

[0107] The display device 10B shown in Figure 5B includes a display panel 11 having a display panel 11q composed of a display panel 11a and a plurality of display panels 11b, a fixing member 20 having a curved surface 22 and a flat surface 23, and a housing 30. Each of the display panel 11a and the plurality of display panels 11b is fitted with an FPC 12 (Flexible Printed Circuit) housed in the housing 30.

[0108] The fixing member 20 to which the multiple display panels 11p are fixed has a frustoconical shape formed by a curved surface 22 corresponding to the developable surface created by joining the multiple display panels 11b, and a flat surface 23 to which the display panel 11a is attached.

[0109] The housing 30 has a configuration in which a display panel 11a is fixed to the flat surface 23 of the fixing member 20, and multiple display panels 11b are fixed along the curved surface 22 of the fixing member, with the non-display portion of the display panel 11, such as an FPC 12, being housed within it. This configuration makes it possible to create a display device having display surfaces with both flat and curved surfaces.

[0110] The display panel 11a shown in Figure 5C is a circular display panel. In Figure 5C, in addition to the FPC 12 shown in Figure 5B, the source driver circuit 13, display unit 14, non-display unit 15, pixel 16, and gate driver circuit 17 are also shown.

[0111] The description of the source driver circuit 13, display unit 14, non-display unit 15, pixels 16, and gate driver circuit 17 of the display panel 11a is the same as the description in Figure 2A of Embodiment 1. By making the gate driver circuit 17 out of transistors manufactured using the same process as the pixel circuit, the gate driver circuit 17 can be made less susceptible to damage even when placed in the display unit 14. Furthermore, because the gate driver circuit 17 can be placed in the display unit 14, each pixel can be driven even in a non-rectangular display unit, resulting in a display device with excellent design.

[0112] Figure 5D illustrates how multiple display panels 11b are connected in the display panel 11q. It is preferable that the multiple display panels 11b are separated into individual units. This configuration allows for the reduction of stress at the connection points between the display panels 11b when the display panel 11q is constructed by combining multiple display panels 11b.

[0113] Figure 6 describes the details of the display panel 11b shown in Figure 5D. In addition to the FPC 12 shown in Figure 5B, Figure 6 also shows the source driver circuit 13, display unit 14, non-display unit 15, pixels 16, and gate driver circuit 17.

[0114] The description of the source driver circuit 13, display unit 14, non-display unit 15, pixels 16, and gate driver circuit 17 of the display panel 11b is the same as the description in Figure 2A of Embodiment 1. By making the gate driver circuit 17 out of transistors manufactured using the same process as the pixel circuit, the gate driver circuit 17 can be made less susceptible to damage even when placed in the display unit 14. Furthermore, because the gate driver circuit 17 can be placed in the display unit 14, each pixel can be driven even in a non-rectangular display unit, resulting in a display device with excellent design.

[0115] As described above, by adopting one aspect of the present invention, a display device with high display quality can be provided. Alternatively, by adopting one aspect of the present invention, a display device with superior convenience or reliability can be provided. Alternatively, by adopting one aspect of the present invention, the degree of design freedom for the display device can be increased, and the design of the display device can be improved.

[0116] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0117] (Embodiment 3) In this embodiment, we will describe a configuration for a display device that offers excellent convenience or reliability, which has a design-oriented display surface and a robust structure resistant to impacts, etc., different from that of Embodiments 1 and 2. Details of explanations that overlap with Embodiments 1 and 2 will be omitted, as they will be referenced from those explanations.

[0118] Figure 7A is a perspective view illustrating a display device 10C according to one embodiment of the present invention. Figure 7B is an exploded schematic view of the display device 10C shown in Figure 7A.

[0119] The display device 10C shown in Figure 7A has a housing 30 that houses a display panel 11, which is composed of display panels 11f. The display panel 11 has a truncated pyramidal expandable surface made by folding and joining display panels 11f. The display device 10C also has a protective substrate 40 to block the display at the corners of the truncated pyramidal surface.

[0120] Figure 7A illustrates an example in which the display panel 11 is formed by folding and joining display panels 11f to create a truncated square pyramidal display area. This configuration allows the display device 10C to have a display surface with excellent design.

[0121] The display device 10C shown in Figure 7B includes a protective substrate 40 for blocking the display at the corners of the truncated pyramidal shape, a display panel 11 formed by bending and joining display panels 11f, a fixing member 20 for fixing the truncated pyramidal display, and a housing 30. The display panel 11f has multiple FPCs 12 (Flexible printed circuits) attached to it, which are housed in the housing 30.

[0122] The fixing member 20 to which the display panel 11 is fixed has a truncated square pyramidal shape created by bending and joining the display panel 11f.

[0123] The housing 30 has a configuration in which the non-display portion of the display panel 11, such as an FPC 12, is housed, with the display panel 11f fixed to the truncated pyramidal fixing member 20.

[0124] Figure 8A illustrates the display panel 11f shown in Figure 7B. Figure 8A shows the source driver circuit 13, display unit 14, non-display unit 15, pixels 16, gate driver circuit 17, folding unit 18, and notch 19.

[0125] The description of the source driver circuit 13, display unit 14, non-display unit 15, pixels 16, and gate driver circuit 17 of the display panel 11f is the same as the description in Figure 2A of Embodiment 1. By making the gate driver circuit 17 out of transistors manufactured using the same process as the pixel circuit, the gate driver circuit 17 can be made less susceptible to damage even when placed in the display unit 14. Furthermore, because the gate driver circuit 17 can be placed in the display unit 14, each pixel can be driven even in a non-rectangular display unit, resulting in a display device with excellent design.

[0126] The display panel 11f can be formed into a truncated pyramidal display panel 11f as shown in Figure 8B by folding the bent portion 18 along the edge of the upper surface of the fixing member 20 with the notch portion 19 positioned at the corner of the upper surface of the fixing member 20, and then joining the edges in the folded area. In addition, the multiple source driver circuits 13 provided in the non-display portion 15 shown in Figure 8A are connected to the FPC 12 as shown in Figure 8B. Furthermore, by having the notch portion 19 shown in Figure 8A, it is possible to create a configuration that alleviates stress at the corners when the truncated pyramidal structure is formed by folding and joining the display panel 11f.

[0127] Note that the arrangement of the source driver circuit 13 in the display panel 11f is not limited to the configuration shown in Figure 8A. For example, as shown in Figure 9A, the source driver circuit 13 can be arranged in one location. Also, the shape of the notch 19 shown in Figure 8A is not limited to a circular shape; it may be an acute-angled shape as shown in Figure 9B, a slit shape as shown in Figure 9C, or the like.

[0128] As described above, by adopting one aspect of the present invention, a display device with high display quality can be provided. Alternatively, by adopting one aspect of the present invention, a display device with superior convenience or reliability can be provided. Alternatively, by adopting one aspect of the present invention, the degree of design freedom for the display device can be increased, and the design of the display device can be improved.

[0129] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0130] (Embodiment 4) In this embodiment, the detailed configuration of the display unit 14 of Embodiment 1 is shown below.

[0131] Figure 10A shows a top view of the display unit 14. The display unit 14 has a pixel section in which a plurality of pixels 16 are arranged in a matrix, and a connection section 140 outside the pixel section. The areas between the pixels and the connection section 140 are not light-emitting areas, but are included in the display unit 14.

[0132] A stripe array is applied to pixel 16 shown in Figure 10A. Pixel 16 shown in Figure 10A is composed of three subpixels: subpixels 16a, 16b, and 16c. Each subpixel 16a, 16b, and 16c has a light-emitting device that emits light of a different color. Examples of subpixels 16a, 16b, and 16c include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M).

[0133] Figure 10A shows an example where subpixels of different colors are arranged in the X direction, and subpixels of the same color are arranged in the Y direction. Alternatively, subpixels of different colors may be arranged in the Y direction, and subpixels of the same color may be arranged in the X direction.

[0134] Figure 10A shows an example where the connection portion 140 is located below the pixel portion in a top view, but it is not particularly limited. The connection portion 140 only needs to be provided at least one location above, to the right, to the left, or below the pixel portion in a top view. Also, there may be one or more connection portions 140.

[0135] Figure 10B shows a cross-sectional view between the dashed line X1 and X2 in Figure 10A.

[0136] As shown in Figure 10B, the display unit 14 has light-emitting devices 130a, 130b, and 130c provided on a layer 101 containing transistors, and insulating layers 131 and 132 are provided to cover these light-emitting devices. The substrate 120 is bonded to the insulating layer 132 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting devices.

[0137] In one embodiment of the present invention, the display area may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0138] The layer 101 containing transistors can be, for example, a laminated structure in which multiple transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The layer 101 containing transistors may have recesses between adjacent light-emitting devices. For example, recesses may be provided in the insulating layer located on the outermost surface of the layer 101 containing transistors. An example of the configuration of the layer 101 containing transistors will be described later.

[0139] Each of the light-emitting devices 130a, 130b, and 130c emits light of a different color. Preferably, the light-emitting devices 130a, 130b, and 130c are a combination that emits, for example, red (R), green (G), and blue (B) light.

[0140] As light-emitting devices 130a, 130b, and 130c, it is preferable to use EL devices such as OLEDs (Organic Light Emitting Diodes) or QLEDs (Quantum-dot Light Emitting Diodes). Alternatively, it is also possible to use light-emitting devices such as inorganic light-emitting diodes (including LEDs, mini-LEDs, micro-LEDs, etc.). Examples of light-emitting materials for EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. As TADF materials, materials in which the singlet excited state and triplet excited state are in thermal equilibrium may be used. Since such TADF materials have a shorter emission lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting device.

[0141] The light-emitting device has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0142] In a light-emitting device, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0143] The light-emitting device 130a includes a pixel electrode 111a on a layer 101 containing a transistor, an island-shaped first organic layer 113a on the pixel electrode 111a, a fifth organic layer 114 on the island-shaped first organic layer 113a, and a common electrode 115 on the fifth organic layer 114. In the light-emitting device 130a, the first organic layer 113a and the fifth organic layer 114 can be collectively referred to as the EL layer.

[0144] The configuration of the light-emitting device in this embodiment is not particularly limited and may be a single structure or a tandem structure. Examples of the configuration of the light-emitting device will be described later in Embodiment 7.

[0145] The light-emitting device 130b includes a pixel electrode 111b on a layer 101 containing a transistor, an island-shaped second organic layer 113b on the pixel electrode 111b, a fifth organic layer 114 on the island-shaped second organic layer 113b, and a common electrode 115 on the fifth organic layer 114. In the light-emitting device 130b, the second organic layer 113b and the fifth organic layer 114 can be collectively referred to as the EL layer.

[0146] The light-emitting device 130c includes a pixel electrode 111c on a layer 101 containing a transistor, an island-shaped third organic layer 113c on the pixel electrode 111c, a fifth organic layer 114 on the island-shaped third organic layer 113c, and a common electrode 115 on the fifth organic layer 114. In the light-emitting device 130c, the third organic layer 113c and the fifth organic layer 114 can be collectively referred to as the EL layer.

[0147] Each color of light-emitting device shares the same film as a common electrode. The common electrode, which is common to all color light-emitting devices, is electrically connected to a conductive layer provided in the connection part 140. As a result, the same potential is supplied to the common electrode of each color of light-emitting device.

[0148] Of the pixel electrodes and common electrodes, the electrode that extracts light should preferably use a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light.

[0149] As materials for forming the pair of electrodes (pixel electrode and common electrode) of a light-emitting device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, etc., can also be used.

[0150] It is preferable that the light-emitting device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device.

[0151] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0152] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0153] The first organic layer 113a, the second organic layer 113b, and the third organic layer 113c are each provided in an island-like manner. The first organic layer 113a, the second organic layer 113b, and the third organic layer 113c each have a light-emitting layer. Preferably, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c each have a light-emitting layer that emits light of a different color.

[0154] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0155] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0156] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0157] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0158] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0159] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0160] The first organic layer 113a, the second organic layer 113b, and the third organic layer 113c may further include layers other than the light-emitting layer, such as a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, an electron blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0161] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0162] For example, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c may each have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. The hole injection layer, hole transport layer, hole blocking layer, electron blocking layer, electron transport layer, and electron injection layer may be referred to as functional layers.

[0163] Among the EL layers, one or more of the following layers can be applied to be formed in common for each color: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, a carrier injection layer (hole injection layer or electron injection layer) may be formed as the fifth organic layer 114. Furthermore, all layers of the EL layer may be made differently for each color. In other words, the EL layer does not necessarily have to have layers formed in common for each color.

[0164] Preferably, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c each have an emissive layer and a carrier transport layer on the emissive layer. This suppresses the exposure of the emissive layer to the outermost surface during the manufacturing process of the display unit 14, thereby reducing damage to the emissive layer. This improves the reliability of the light-emitting device.

[0165] The hole injection layer is a functional layer that injects holes from the anode to the hole transport layer, and is a layer containing a material having high hole injection properties. Examples of materials with high hole injection properties include aromatic amine compounds and composite materials containing a hole transport material and an acceptor material (electron-accepting material).

[0166] The hole transport layer is a functional layer that transports holes injected from the anode to the light-emitting layer via the hole injection layer. The hole transport layer is a layer containing a hole transport material. As the hole transport material, 10 -6 cm 2 / Vs or higher hole mobility is preferable. Any substance other than these may also be used as long as it has higher hole transport properties than electron transport properties. As the hole transport material, materials with high hole transport properties such as π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton) are preferable.

[0167] The electron transport layer is a functional layer that transports electrons injected from the cathode to the light-emitting layer via the electron injection layer. The electron transport layer is a layer containing an electron transport material. As the electron transport material, 1×10 -6 cm 2 / Vs or higher electron mobility is preferable. Any substance other than these may also be used as long as it has higher electron transport properties than hole transport properties. As the electron transport material, in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., materials with high electron transport properties such as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds can be used.

[0168] The electron injection layer is a functional layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0169] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF). x (where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0170] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0171] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0172] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0173] Furthermore, when fabricating a tandem light-emitting device, an intermediate layer is provided between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.

[0174] As the intermediate layer, for example, a material applicable to the electron injection layer, such as lithium, can be suitably used. Alternatively, as the intermediate layer, a material applicable to the hole injection layer can be suitably used. Furthermore, the intermediate layer can include a layer containing a hole transport material and an acceptor material (electron-accepting material). Alternatively, the intermediate layer can include a layer containing an electron transport material and a donor material. By forming an intermediate layer having such a layer, the increase in driving voltage when light-emitting units are stacked can be suppressed.

[0175] Each side of the pixel electrodes 111a, 111b, 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c is covered by insulating layers 125 and 127. This prevents the fifth organic layer 114 (or common electrode 115) from coming into contact with any side of the pixel electrodes 111a, 111b, 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c, thereby preventing a short circuit in the light-emitting device.

[0176] The insulating layer 125 preferably covers at least the sides of the pixel electrodes 111a, 111b, and 111c. Furthermore, it is preferable that the insulating layer 125 covers the sides of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c. The insulating layer 125 can be configured to be in contact with each of the sides of the pixel electrodes 111a, 111b, and 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c.

[0177] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with the sides of the pixel electrodes 111a, 111b, 111c, the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c, via the insulating layer 125.

[0178] It is also possible to omit either the insulating layer 125 or the insulating layer 127. For example, if the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the respective sides of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c. The insulating layer 127 can be provided on the protective layer 121 so as to fill the spaces between the EL layers of each light-emitting device.

[0179] The fifth organic layer 114 and the common electrode 115 are provided on the first organic layer 113a, the second organic layer 113b, the third organic layer 113c, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step difference occurs due to the region where the pixel electrode and EL layer are provided and the region where the pixel electrode and EL layer are not provided (the region between the light-emitting devices). In one embodiment of the present invention, the display region can have this step difference flattened by having the insulating layer 125 and the insulating layer 127, and the coverage of the fifth organic layer 114 and the common electrode 115 can be improved. Therefore, connection failures due to step breaks can be suppressed. Alternatively, it can be suppressed that the common electrode 115 will be locally thinned due to the step difference, thereby increasing its electrical resistance.

[0180] To improve the flatness of the formation surfaces of the fifth organic layer 114 and the common electrode 115, it is preferable that the heights of the upper surfaces of the insulating layer 125 and the insulating layer 127 match or approximately match the height of at least one of the upper surfaces of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c, respectively. Furthermore, it is preferable that the upper surface of the insulating layer 127 has a flat shape, although it may have convex or concave portions.

[0181] The insulating layer 125 has a region that is in contact with the sides of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c, and functions as a protective insulating layer for the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c. By providing the insulating layer 125, it is possible to suppress the intrusion of impurities (oxygen, moisture, etc.) into the interior from the sides of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c, thereby creating a highly reliable display area.

[0182] If the width (thickness) of the insulating layer 125 is large in the region in contact with the sides of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c in a cross-sectional view, the spacing between the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c will increase, which may result in a lower aperture ratio. Conversely, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing the intrusion of impurities into the interior from the sides of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c may be reduced. The width (thickness) of the insulating layer 125 in the region in contact with the sides of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, more preferably 5 nm to 150 nm, more preferably 5 nm to 100 nm, more preferably 10 nm to 100 nm, and more preferably 10 nm to 50 nm. By setting the width (thickness) of the insulating layer 125 within the above range, a display area with a high aperture ratio and high reliability can be achieved.

[0183] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer during the formation of the insulating layer 127, which will be described later. In particular, by applying inorganic insulating films such as aluminum oxide films, hafnium oxide films, and silicon oxide films formed by the ALD method to the insulating layer 125, it is possible to form an insulating layer 125 with fewer pinholes and excellent function in protecting the EL layer.

[0184] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0185] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0186] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the recess in the insulating layer 125 formed between adjacent light-emitting devices. In other words, the presence of the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. Suitable insulating layers 127 include those made of organic materials. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin can be used as the insulating layer 127. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0187] The difference between the height of the upper surface of the insulating layer 127 and the height of the upper surface of any of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c is preferably 0.5 times or less the thickness of the insulating layer 127, and more preferably 0.3 times or less. Alternatively, the insulating layer 127 may be provided such that the upper surface of any of the first organic layer 113a, the second organic layer 113b, and the third organic layer 113c is higher than the upper surface of the insulating layer 127. Alternatively, the insulating layer 127 may be provided such that the upper surface of the insulating layer 127 is higher than the upper surface of the light-emitting layer of the first organic layer 113a, the second organic layer 113b, or the third organic layer 113c.

[0188] It is preferable to have insulating layers 131 and 132 on the light-emitting devices 130a, 130b, and 130c. Providing insulating layers 131 and 132 can improve the reliability of the light-emitting devices.

[0189] The conductivity of the insulating layers 131 and 132 is not required. At least one of an insulating film, a semiconductor film, and a conductive film can be used as the insulating layers 131 and 132.

[0190] The presence of inorganic films in the insulating layers 131 and 132 prevents oxidation of the common electrode 115 and suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting devices 130a, 130b, and 130c, thereby suppressing degradation of the light-emitting devices and improving the reliability of the display area.

[0191] For the insulating layers 131 and 132, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxide nitride films and aluminum oxide nitride films. Examples of nitride oxide insulating films include silicon oxide nitride films and aluminum oxide nitride films.

[0192] The insulating layers 131 and 132 preferably each have a nitride insulating film or a nitride oxide insulating film, and more preferably a nitride insulating film.

[0193] Furthermore, the insulating layers 131 and 132 may also be made of an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0194] When the light emitted from a light-emitting device is extracted via insulating layers 131 and 132, it is preferable that the insulating layers 131 and 132 have high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0195] As insulating layers 131 and 132, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress impurities (water, oxygen, etc.) that penetrate to the EL layer side.

[0196] Furthermore, the insulating layers 131 and 132 may have an organic film. For example, the insulating layer 132 may have both an organic film and an inorganic film.

[0197] Different film deposition methods may be used for the insulating layer 131 and the insulating layer 132. Specifically, the insulating layer 131 may be formed using atomic layer deposition (ALD), and the insulating layer 132 may be formed using sputtering.

[0198] The upper edges of the pixel electrodes 111a, 111b, and 111c are not covered by an insulating layer. Therefore, the spacing between adjacent light-emitting devices can be made extremely narrow. Consequently, a high-definition or high-resolution display area can be achieved.

[0199] The display unit 14 of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of the first organic layer 113a and the side surface of the second organic layer 113b, or the distance between the side surface of the second organic layer 113b and the side surface of the third organic layer 113c, has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0200] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 120.

[0201] As the substrate 120, various materials can be used, including polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. Glass with a thickness sufficient to provide flexibility may also be used for the substrate 120.

[0202] Furthermore, when a circular polarizing plate is superimposed on the display area, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0203] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0204] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic resin film.

[0205] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0206] As the resin layer 122, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0207] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display panels, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0208] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display panel, and for conductive layers of light-emitting devices (conductive layers that function as pixel electrodes or common electrodes).

[0209] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0210] [Pixel layout] Next, we will describe a pixel layout different from Figure 10A. There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0211] Furthermore, the top surface shape of a sub-pixel can be, for example, a triangle, a quadrilateral (including rectangles and squares), a pentagon, or other polygons with rounded corners, an ellipse, or a circle. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0212] The pixel 16 shown in Figure 11A has an S-stripe array applied to it. The pixel 16 shown in Figure 11A is composed of three subpixels: subpixels 16a, 16b, and 16c. For example, as shown in Figure 12A, subpixel 16a may be a blue subpixel B, subpixel 16b may be a red subpixel R, and subpixel 16c may be a green subpixel G.

[0213] The pixel 16 shown in Figure 11B has a sub-pixel 16a with a roughly trapezoidal top surface shape with rounded corners, a sub-pixel 16b with a roughly triangular top surface shape with rounded corners, and a sub-pixel 16c with a roughly quadrilateral or roughly hexagonal top surface shape with rounded corners. Furthermore, sub-pixel 16a has a larger light-emitting area than sub-pixel 16b. Thus, the shape and size of each sub-pixel can be determined independently. For example, the size of a sub-pixel can be reduced to a level that provides a more reliable light-emitting device. For example, as shown in Figure 12B, sub-pixel 16a may be a green sub-pixel G, sub-pixel 16b may be a red sub-pixel R, and sub-pixel 16c may be a blue sub-pixel B.

[0214] A Pentile array is applied to pixels 26a and 26b shown in Figure 11C. Figure 11C shows an example in which pixels 26a having subpixels 16a and 16b, and pixels 26b having subpixels 16b and 16c are arranged alternately. For example, as shown in Figure 12C, subpixel 16a may be a red subpixel R, subpixel 16b may be a green subpixel G, and subpixel 16c may be a blue subpixel B.

[0215] Pixels 26a and 26b shown in Figures 11D and 11E utilize a delta array. Pixel 26a has two subpixels (subpixels 16a and 16b) in the top row (1st row) and one subpixel (subpixel 16c) in the bottom row (2nd row). Pixel 26b has one subpixel (subpixel 16c) in the top row (1st row) and two subpixels (subpixels 16a and 16b) in the bottom row (2nd row). For example, as shown in Figure 12D, subpixel 16a may be a red subpixel R, subpixel 16b a green subpixel G, and subpixel 16c a blue subpixel B.

[0216] Figure 11D shows an example where each subpixel has a roughly square top shape with rounded corners, and Figure 11E shows an example where each subpixel has a circular top shape.

[0217] In photolithography, the finer the pattern being processed, the more significant the effects of light diffraction become. This compromises the fidelity of the transfer of the photomask pattern through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, patterns with rounded corners are likely to be formed. Consequently, the top surface shape of subpixels may be a polygon with rounded corners, an ellipse, or a circle.

[0218] Furthermore, in a method for manufacturing a display panel according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material, the curing of the resist film may be insufficient. A resist film that is not sufficiently cured may take a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, or a circle. For example, if an attempt is made to form a resist mask with a square top surface, a resist mask with a circular top surface may be formed, resulting in a circular top surface shape for the EL layer.

[0219] Furthermore, in order to achieve the desired shape of the upper surface of the EL layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, a correction pattern is added to the corners of the shape on the mask pattern.

[0220] Furthermore, even in the pixel 16 to which the stripe arrangement shown in Figure 10A is applied, for example, as shown in Figure 12E, sub-pixel 16a can be a red sub-pixel R, sub-pixel 16b can be a green sub-pixel G, and sub-pixel 16c can be a blue sub-pixel B.

[0221] In one aspect of the present invention, an organic EL device is used as the light-emitting device.

[0222] In one embodiment of the present invention, the display unit 14 has light-emitting devices arranged in a matrix in the pixel section, and an image can be displayed in the pixel section.

[0223] Furthermore, in one embodiment of the present invention, the display unit 14 can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate (for example, within a range of 0.1 Hz to 240 Hz) according to the content displayed on the display unit 14.

[0224] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0225] (Embodiment 5) In this embodiment, a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device) that can be used in a display device according to one aspect of the present invention will be described.

[0226] [Light-emitting devices] Furthermore, light-emitting devices can be broadly classified into single-structure and tandem-structure devices. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that this light-emitting unit includes one or more light-emitting layers. To obtain white light emission in a single-structure device, one should select light-emitting layers such that the light emitted from each of the two or more layers is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. The same applies to light-emitting devices having three or more light-emitting layers.

[0227] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a more reliable light-emitting device can be achieved compared to a single structure. To obtain white light emission in a tandem structure, the light from the light-emitting layers of multiple light-emitting units can be combined to produce white light emission. The combination of light-emitting colors that produces white light emission is the same as that for a single structure. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0228] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with light-emitting devices with an SBS structure, the SBS structure light-emitting device can consume less power than the white light-emitting device. If you want to keep power consumption low, it is preferable to use a light-emitting device with an SBS structure. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0229] <Example of light-emitting device configuration> As shown in Figure 13A, the light-emitting device has an EL layer 790 between a pair of electrodes (lower electrode 791, upper electrode 792). The EL layer 790 can be composed of multiple layers, such as layer 720, light-emitting layer 711, and layer 730. Layer 720 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). The light-emitting layer 711 may include, for example, a light-emitting compound. Layer 730 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0230] A configuration having a layer 720, an emissive layer 711, and a layer 730 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 13A is referred to as a single structure.

[0231] Furthermore, Figure 13B shows a modified example of the EL layer 790 of the light-emitting device shown in Figure 13A. Specifically, the light-emitting device shown in Figure 13B includes a layer 730-1 on the lower electrode 791, a layer 730-2 on layer 730-1, a light-emitting layer 711 on layer 730-2, a layer 720-1 on the light-emitting layer 711, a layer 720-2 on layer 720-1, and an upper electrode 792 on layer 720-2. For example, when the lower electrode 791 is the anode and the upper electrode 792 is the cathode, layer 730-1 functions as a hole injection layer, layer 730-2 functions as a hole transport layer, layer 720-1 functions as an electron transport layer, and layer 720-2 functions as an electron injection layer. Alternatively, when the lower electrode 791 is used as the cathode and the upper electrode 792 as the anode, layer 730-1 functions as an electron injection layer, layer 730-2 functions as an electron transport layer, layer 720-1 functions as a hole transport layer, and layer 720-2 functions as a hole injection layer. By using such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 711 and increase the efficiency of carrier recombination within the light-emitting layer 711.

[0232] Furthermore, as shown in Figures 13C and 13D, a configuration in which multiple light-emitting layers (light-emitting layers 711, 712, and 713) are provided between layer 720 and layer 730 is also a variation of the single structure.

[0233] Furthermore, as shown in Figures 13E and 13F, a configuration in which multiple light-emitting units (EL layer 790a, EL layer 790b) are connected in series via an intermediate layer (charge generation layer) 740 is referred to as a tandem structure in this specification. In this specification, the configuration shown in Figures 13E and 13F is referred to as a tandem structure, but it is not limited to this, and for example, a tandem structure may also be called a stack structure. By using a tandem structure, a light-emitting device capable of high-brightness light emission can be made.

[0234] In Figure 13C, the light-emitting layers 711, 712, and 713 may be made of the same light-emitting material.

[0235] Furthermore, different light-emitting materials may be used for the light-emitting layers 711, 712, and 713. When the light emitted by the light-emitting layers 711, 712, and 713 are complementary in color, white light emission is obtained. Figure 13D shows an example in which a colored layer 785, which functions as a color filter, is provided. By passing white light through the color filter, light of the desired color can be obtained.

[0236] Furthermore, in Figure 13E, the same light-emitting material may be used for both the light-emitting layer 711 and the light-emitting layer 712. Alternatively, light-emitting materials that emit different types of light may be used for both the light-emitting layer 711 and the light-emitting layer 712. When the light emitted by the light-emitting layer 711 and the light emitted by the light-emitting layer 712 are complementary colors, white light emission is obtained. Figure 13F shows an example in which a colored layer 785 is further provided.

[0237] Furthermore, in Figures 13C, 13D, 13E, and 13F, as shown in Figure 13B, layer 720 and layer 730 may be a laminated structure consisting of two or more layers.

[0238] Furthermore, in Figure 13D, the same light-emitting material may be used for light-emitting layers 711, 712, and 713. Similarly, in Figure 13F, the same light-emitting material may be used for light-emitting layers 711 and 712. In this case, by applying a color conversion layer instead of the colored layer 785, it is possible to obtain light of a desired color different from that of the light-emitting material. For example, by using a blue light-emitting material for each light-emitting layer, blue light can pass through the color conversion layer to obtain light with a longer wavelength than blue (e.g., red, green, etc.). Fluorescent materials, phosphorescent materials, or quantum dots can be used as the color conversion layer.

[0239] A structure that generates different light-emitting colors (in this case, blue (B), green (G), and red (R)) for each light-emitting device is sometimes called an SBS (Side By Side) structure.

[0240] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material that makes up the EL layer 790. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0241] A light-emitting device that emits white light preferably has a configuration that includes two or more types of light-emitting materials in its light-emitting layer. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more materials is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices that have three or more light-emitting layers.

[0242] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable to have two or more light-emitting materials, and for each light-emitting material to emit light that contains spectral components of two or more colors from R, G, and B.

[0243] [Light receiving device] Figure 14A shows schematic cross-sectional views of the light-emitting devices 750R, 750G, 750B, and 760. The light-emitting devices 750R, 750G, 750B, and 760 all share a common upper electrode 792 layer.

[0244] The light-emitting device 750R has a pixel electrode 791R, layers 751 and 752, a light-emitting layer 753R, layers 754 and 755, and an upper electrode 792. The light-emitting device 750G has a pixel electrode 791G and a light-emitting layer 753G. The light-emitting device 750B has a pixel electrode 791B and a light-emitting layer 753B.

[0245] Layer 751 includes, for example, a layer containing a material with high hole injection properties (hole injection layer). Layer 752 includes, for example, a layer containing a material with high hole transport properties (hole transport layer). Layer 754 includes, for example, a layer containing a material with high electron transport properties (electron transport layer). Layer 755 includes, for example, a layer containing a material with high electron injection properties (electron injection layer).

[0246] Alternatively, the configuration may include layer 751 having an electron injection layer, layer 752 having an electron transport layer, layer 754 having a hole transport layer, and layer 755 having a hole injection layer.

[0247] Note that in Figure 14A, layers 751 and 752 are shown separately, but this is not the only way. For example, if layer 751 has the functions of both a hole injection layer and a hole transport layer, or if layer 751 has the functions of both an electron injection layer and an electron transport layer, then layer 752 may be omitted.

[0248] Furthermore, the light-emitting layer 753R of the light-emitting device 750R contains a light-emitting material that emits red light, the light-emitting layer 753G of the light-emitting device 750G contains a light-emitting material that emits green light, and the light-emitting layer 753B of the light-emitting device 750B contains a light-emitting material that emits blue light. The light-emitting devices 750G and 750B have a configuration in which the light-emitting layer 753R of the light-emitting device 750R is replaced with the light-emitting layer 753G and light-emitting layer 753B, respectively, and the other configurations are the same as those of the light-emitting device 750R.

[0249] Layers 751, 752, 754, and 755 may have the same configuration (material, film thickness, etc.) for each color of light-emitting device, or they may have different configurations from each other.

[0250] The photodetector 760 has a pixel electrode 791PD, layers 761, 762, 763, and an upper electrode 792. The photodetector 760 may be configured without a hole injection layer and an electron injection layer.

[0251] Layer 762 has an active layer (also called a photoelectric conversion layer). Layer 762 has the function of absorbing light in a specific wavelength band and generating carriers (electrons and holes).

[0252] Layers 761 and 763 each have, for example, either a hole transport layer or an electron transport layer. If layer 761 has a hole transport layer, then layer 763 has an electron transport layer. Conversely, if layer 761 has an electron transport layer, then layer 763 has a hole transport layer.

[0253] Furthermore, the light-receiving element 760 may have the pixel electrode 791PD as the anode and the upper electrode 792 as the cathode, or the pixel electrode 791PD as the cathode and the upper electrode 792 as the anode.

[0254] Figure 14B is a modified example of Figure 14A. In Figure 14B, layer 755 is provided in common between each light-emitting element and between each photodetector, similar to the upper electrode 792. In this case, layer 755 can be called a common layer. By providing one or more common layers between each light-emitting element and between each photodetector in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced.

[0255] Here, layer 755 functions as an electron injection layer or a hole injection layer for the light-emitting device 750. At the same time, it functions as an electron transport layer or a hole transport layer for the photodetector 760. Therefore, the photodetector 760 shown in Figure 14B does not need to have a layer 763 that functions as an electron transport layer or a hole transport layer.

[0256] [Light-emitting devices] Here, we will describe a specific example of the configuration of a light-emitting device.

[0257] The light-emitting device has at least a light-emitting layer. The light-emitting device may also have layers other than the light-emitting layer that include a material with high hole injection properties, a material with high hole transport properties, a hole-blocking material, a material with high electron transport properties, an electron-blocking material, a material with high electron injection properties, or a bipolar material (a material with high electron transport and hole transport properties).

[0258] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0259] For example, a light-emitting device can have a configuration that includes one or more layers from among a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0260] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0261] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. As for the hole-transporting material, 10 -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0262] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0263] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0264] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0265] Alternatively, an electron-transporting material may be used as the electron injection layer described above. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0266] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0267] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0268] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0269] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0270] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0271] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, organometallic complexes (especially iridium complexes) having a phenylpyridine derivative having an electron-withdrawing group as a ligand, platinum complexes, and rare earth metal complexes.

[0272] The light-emitting layer may contain one or more organic compounds (such as a host material and an assist material) in addition to the light-emitting substance (guest material). As the one or more organic compounds, one or both of a hole-transporting material and an electron-transporting material can be used. Further, a bipolar material or a TADF material may be used as the one or more organic compounds.

[0273] Preferably, for example, the light-emitting layer includes a phosphorescent material, and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex. With such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the exciplex to the light-emitting substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an exciplex that emits light overlapping with the wavelength of the lowest energy absorption band of the light-emitting substance, energy transfer becomes smooth and efficient light emission can be obtained. This configuration enables simultaneous achievement of high efficiency, low voltage driving, and long lifespan of the light-emitting device.

[0274] [Light-receiving device] The active layer included in the light-receiving device contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing an organic compound. In the present embodiment, an example in which an organic semiconductor is used as the semiconductor included in the active layer will be described. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (for example, a vacuum deposition method), and manufacturing equipment can be shared.

[0275] Examples of the material of the n-type semiconductor included in the active layer include fullerene (for example, C60 , C 70 and the like), electron-accepting organic semiconductor materials such as fullerene derivatives can be mentioned. Fullerene has a shape similar to a soccer ball, and this shape is energetically stable. For fullerenes, both the HOMO level and the LUMO level are deep (low). Since the LUMO level of fullerene is deep, its electron accepting property (acceptor property) is extremely high. Normally, as in benzene, when π-electron conjugation (resonance) spreads in a plane, the electron donating property (donor property) increases. However, since fullerene has a spherical shape, despite the extensive spread of π-electron conjugation, it exhibits high electron accepting property. High electron accepting property enables charge separation to occur efficiently at high speed, which is beneficial for light-receiving devices. C 60 , C 70 both have broad absorption bands in the visible light region, and in particular, C 70 has a larger π-electron conjugated system than C 60 , and has a broad absorption band even in the long wavelength region, which is preferable. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), 1’,1’’,4’,4’’-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2’’,3’’][5,6]fullerene-C60 (abbreviation: ICBA), and the like.

[0276] In addition, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0277] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0278] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indrocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0279] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0280] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0281] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0282] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, it may also further include layers containing a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, an electron blocking material, etc.

[0283] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0284] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0285] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0286] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0287] The above is a description of the light-receiving device.

[0288] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0289] (Embodiment 6) This embodiment describes an example configuration of a light-emitting device or display device that can be used as a light-receiving device according to one aspect of the present invention.

[0290] One aspect of the present invention is a display device having a light-emitting element (also called a light-emitting device) and a light-receiving element (also called a light-receiving device). For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0291] One aspect of the present invention involves processing EL layers into fine patterns using photolithography without using shadow masks such as metal masks, and between EL layers and the active layer. This makes it possible to realize a display device with high resolution and a large aperture ratio, which has been difficult to achieve until now. Furthermore, because the EL layers can be differentiated, it is possible to realize a display device with extremely vivid colors, high contrast, and high display quality.

[0292] While it is difficult to reduce the spacing between different colored EL layers, or between the EL layer and the active layer, to less than 10 μm using a metal mask formation method, the above method allows for narrowing the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less. For example, by using an exposure apparatus for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less. This significantly reduces the area of ​​non-emitting regions that may exist between two light-emitting elements or between a light-emitting element and a photodetector, making it possible to approach an aperture ratio of 100%. For example, an aperture ratio of 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, can be achieved, and even less than 100%.

[0293] Furthermore, the patterns of the EL layer and the active layer themselves can be made significantly smaller compared to when a metal mask is used. Also, for example, when a metal mask is used to create different EL layers, variations in thickness occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as an luminescent region relative to the total area of ​​the pattern. On the other hand, in the above manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as an luminescent region. Therefore, the above manufacturing method can achieve both high resolution and a high aperture ratio.

[0294] An organic film formed using an FMM (Fine Metal Mask) is often a film with an extremely small taper angle (e.g., greater than 0° and less than 30°), such that the thickness becomes thinner closer to the end portion. Therefore, for an organic film formed using an FMM, since the side surface and the top surface are continuously connected, it is difficult to clearly identify the side surface. On the other hand, according to one aspect of the present invention, since it has an EL layer processed without using an FMM, it has a clear side surface. In particular, one aspect of the present invention preferably includes a portion where the taper angle of the EL layer is not less than 30° and not more than 120°, preferably not less than 60° and not more than 120°.

[0295] In this specification and the like, the statement that an end portion of an object is tapered means that in the region of the end portion, the angle formed between a side surface (surface) and a formation-target surface (bottom surface) is greater than 0° and less than 90°, and the object has a cross-sectional shape such that the thickness increases continuously from the end portion. Furthermore, the taper angle refers to the angle formed between the bottom surface (formation-target surface) and the side surface (surface) at the end portion of the object.

[0296] More specific examples are described below.

[0297] FIG. 15A is a schematic top view of a display portion 14. The display portion 14 includes a plurality of each of a red light-emitting element 90R, a green light-emitting element 90G, a blue light-emitting element 90B, and a light-receiving element 90S. In FIG. 4A, to simplify distinction between the respective light-emitting elements, the symbols R, G, B, and S are attached within the light-emitting region of each light-emitting element (and within the light-receiving region of the light-receiving element).

[0298] The light-emitting element 90R, the light-emitting element 90G, the light-emitting element 90B, and the light-receiving element 90S are each arranged in a matrix. FIG. 15A shows a structure in which two elements are alternately arranged in one direction. Note that the arrangement method of the light-emitting elements is not limited thereto; an arrangement method such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may be applied, and a Pentile arrangement, a diamond arrangement, or the like can also be used.

[0299] Figure 15A also shows a connecting electrode 111C that is electrically connected to the common electrode 113. The connecting electrode 111C is supplied with a potential (e.g., anode potential or cathode potential) to the common electrode 113. The connecting electrode 111C is located outside the display area where the light-emitting elements 90R and the like are arranged. The common electrode 113 is also shown by a dashed line in Figure 15A.

[0300] The connecting electrode 111C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the connecting electrode 111C can be a strip, L-shape, U-shape (angle bracket shape), or square, etc.

[0301] Figure 15B is a schematic cross-sectional view corresponding to the dashed-dotted lines A1-A2 and C1-C2 in Figure 15A. Figure 15B shows schematic cross-sectional views of the light-emitting element 90B, the light-emitting element 90R, the photodetector 90S, and the connecting electrode 111C.

[0302] Furthermore, the light-emitting element 90G, which is not shown in the cross-sectional schematic diagram, can have the same configuration as the light-emitting element 90B or the light-emitting element 90R, and the explanations of these can be applied hereafter.

[0303] The light-emitting element 90B has a pixel electrode 111, an organic layer 112B, an organic layer 114, and a common electrode 113. The light-emitting element 90R has a pixel electrode 111, an organic layer 112R, an organic layer 114, and a common electrode 113. The light-receiving element 90S has a pixel electrode 111, a common electrode 115, an organic layer 114, and a common electrode 113. The organic layer 114 and the common electrode 113 are provided in common to the light-emitting element 90B, the light-emitting element 90R, and the light-receiving element 90S. The organic layer 114 can also be called a common layer.

[0304] The organic layer 112R has a luminescent organic compound that emits light with intensity in at least the red wavelength range. The organic layer 112B has a luminescent organic compound that emits light with intensity in at least the blue wavelength range. The common electrode 115 has a photoelectric conversion material that is sensitive to visible light or infrared light wavelengths. The organic layer 112R and the organic layer 112B can also be called EL layers.

[0305] The organic layer 112R, the organic layer 112B, and the common electrode 115 may each have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. The organic layer 114 may have a configuration without an emissive layer. For example, the organic layer 114 may have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0306] In this case, it is preferable that the uppermost layer in the laminated structure of organic layer 112R, organic layer 112B, and common electrode 115, i.e., the layer in contact with organic layer 114, is a layer other than the light-emitting layer. For example, it is preferable to cover the light-emitting layer with an electron injection layer, electron transport layer, hole injection layer, hole transport layer, or other layer, and to have this layer in contact with organic layer 114. In this way, the reliability of the light-emitting device can be improved by protecting the upper surface of the light-emitting layer with another layer when manufacturing each light-emitting device.

[0307] Each pixel electrode 111 is provided for each element. The common electrode 113 and the organic layer 114 are provided as a continuous layer common to each light-emitting element. A conductive film that is transparent to visible light is used on either each pixel electrode or the common electrode 113, and a conductive film that is reflective is used on the other. By making each pixel electrode transparent and the common electrode 113 reflective, a bottom-emission type display device can be made. Conversely, by making each pixel electrode reflective and the common electrode 113 transparent, a top-emission type display device can be made. Furthermore, by making both each pixel electrode and the common electrode 113 transparent, a dual-emission type display device can be made.

[0308] An insulating layer 131 is provided covering the end of the pixel electrode 111. Preferably, the end of the insulating layer 131 is tapered. In this specification, etc., a tapered end of an object means that in the region of that end, the angle between the surface and the surface to be formed is greater than 0 degrees and less than 90 degrees, and the cross-sectional shape has such that the thickness increases continuously from the end.

[0309] Furthermore, by using an organic resin for the insulating layer 131, its surface can be made into a gently curved surface. This improves the coverage of the film formed on the insulating layer 131.

[0310] Examples of materials that can be used for the insulating layer 131 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0311] Alternatively, an inorganic insulating material may be used as the insulating layer 131. Examples of inorganic insulating materials that can be used for the insulating layer 131 include oxide or nitride films such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, aluminum oxide, aluminum oxide nitride, or hafnium oxide. In addition, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used.

[0312] As shown in Figure 15B, gaps are provided between the two organic layers between light-emitting elements of different colors, and between the light-emitting elements and the light-receiving elements. In this way, it is preferable that the organic layer 112R, the organic layer 112B, and the common electrode 115 are arranged so that they do not come into contact with each other. This effectively prevents current from flowing through the two adjacent organic layers and causing unintended light emission. As a result, contrast can be increased, and a display device with high display quality can be realized.

[0313] The organic layer 112R, the organic layer 112B, and the common electrode 115 preferably have a taper angle of 30 degrees or more. The organic layer 112R, the organic layer 112G, and the organic layer 112B preferably have an angle between the side surface (front) and the bottom surface (formed surface) at their ends that is 30 degrees or more and 120 degrees or less, preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees or more and 120 degrees or less. Alternatively, the organic layer 112R, the organic layer 112G, and the organic layer 112B preferably have a taper angle of 90 degrees or near thereto (for example, 80 degrees or more and 100 degrees or less).

[0314] A protective layer 121 is provided on the common electrode 113. The protective layer 121 has the function of preventing impurities such as water from diffusing to each light-emitting element from above.

[0315] The protective layer 121 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 121.

[0316] Furthermore, a laminated film of an inorganic insulating film and an organic insulating film can be used as the protective layer 121. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. It is also preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 121 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., a color filter, touch sensor electrodes, or lens array) is provided above the protective layer 121.

[0317] In the connection portion 130, a common electrode 113 is provided in contact with the connecting electrode 111C, and a protective layer 121 is provided covering the common electrode 113. In addition, an insulating layer 131 is provided covering the end of the connecting electrode 111C.

[0318] The following describes an example of a display device configuration that differs in some aspects from Figure 15B. Specifically, an example is shown in which the insulating layer 131 is not provided.

[0319] Figures 16A to 16C show examples where the side surface of the pixel electrode 111 is roughly aligned with the side surface of the organic layer 112R, organic layer 112B, or common electrode 115.

[0320] In Figure 16A, the organic layer 114 is provided covering the top and side surfaces of the organic layer 112R, the organic layer 112B, and the common electrode 115. The organic layer 114 prevents the pixel electrode 111 and the common electrode 113 from coming into contact and causing an electrical short circuit.

[0321] Figure 16B shows an example having organic layers 112R, 112G, and 112B, as well as an insulating layer 125 provided in contact with the side surface of the pixel electrode 111. The insulating layer 125 can effectively suppress electrical short circuits between the pixel electrode 111 and the common electrode 113, and leakage current between them.

[0322] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. In particular, by applying inorganic insulating films such as aluminum oxide films, hafnium oxide films, and silicon oxide films formed by the ALD method to the insulating layer 125, an insulating layer 125 can be formed that has few pinholes and excellent function in protecting the organic layer.

[0323] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0324] The insulating layer 125 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0325] In Figure 16C, a resin layer 126 is provided between two adjacent light-emitting elements or between a light-emitting element and a photodetector, filling the gap between two opposing pixel electrodes and the gap between two opposing organic layers. The resin layer 126 flattens the surfaces to be formed, such as the organic layer 114 and the common electrode 113, thereby preventing the common electrode 113 from being disconnected due to poor coating of the step difference between adjacent light-emitting elements.

[0326] As the resin layer 126, an insulating layer having an organic material can be suitably used. For example, as the resin layer 126, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be applied. Alternatively, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used. Furthermore, a photosensitive resin can be used as the resin layer 126. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0327] Furthermore, by using a colored material (for example, a material containing black pigment) as the resin layer 126, a function may be provided to block stray light from adjacent pixels and suppress color mixing.

[0328] In Figure 16D, an insulating layer 125 and a resin layer 126 are provided on the insulating layer 125. Because the insulating layer 125 prevents the organic layer 112R and the resin layer 126 from coming into contact, impurities such as moisture contained in the resin layer 126 can be prevented from diffusing into the organic layer 112R, resulting in a highly reliable display device.

[0329] Furthermore, a mechanism may be provided to improve light extraction efficiency by providing a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) between the insulating layer 125 and the resin layer 126, and reflecting the light emitted from the light-emitting layer with the reflective film.

[0330] Figures 17A to 17C show examples where the width of the pixel electrode 111 is greater than the width of the organic layer 112R, the organic layer 112B, or the common electrode 115. The organic layer 112R, etc., is located inside the edge of the pixel electrode 111.

[0331] Figure 17A shows an example where an insulating layer 125 is present. The insulating layer 125 is provided covering the side surfaces of the organic layer of the light-emitting element or photodetector, and a portion of the upper surface and side surfaces of the pixel electrode 111.

[0332] Figure 17B shows an example in which a resin layer 126 is present. The resin layer 126 is located between two adjacent light-emitting elements or between a light-emitting element and a photodetector, and covers the sides of the organic layer and the top and sides of the pixel electrode 111.

[0333] Figure 17C shows an example where both an insulating layer 125 and a resin layer 126 are present. The insulating layer 125 is provided between the organic layer 112R, etc., and the resin layer 126.

[0334] Figures 18A to 18E show examples where the width of the pixel electrode 111 is smaller than the width of the organic layer 112R, organic layer 112B, or common electrode 115. The organic layer 112R, etc., extends outward beyond the edge of the pixel electrode 111.

[0335] Figure 18B shows an example having an insulating layer 125. The insulating layer 125 is provided in contact with the side surfaces of the organic layers of two adjacent light-emitting elements. Note that the insulating layer 125 may cover not only the side surfaces of the organic layer 112R, etc., but also a portion of the top surface.

[0336] Figure 18C shows an example having a resin layer 126. The resin layer 126 is located between two adjacent light-emitting elements and covers part of the side and top surfaces of the organic layer 112R, etc. Alternatively, the resin layer 126 may be in contact with the side surfaces of the organic layer 112R, etc., but not cover the top surface.

[0337] Figure 18D shows an example where both an insulating layer 125 and a resin layer 126 are present. The insulating layer 125 is provided between the organic layer 112R, etc., and the resin layer 126.

[0338] Here, we will describe an example of the configuration of the resin layer 126.

[0339] While it is preferable for the upper surface of the resin layer 126 to be flat, the surface of the resin layer 126 may be concave or convex depending on the uneven shape of the surface on which the resin layer 126 is formed, the formation conditions of the resin layer 126, etc.

[0340] Figures 19A to 20F show the end of the pixel electrode 111R of the light-emitting element 90R, the end of the pixel electrode 111G of the light-emitting element 90G, and magnified views of their vicinity. An organic layer 112G is provided on the pixel electrode 111G.

[0341] Figures 19A, 19B, and 19C show magnified views of the resin layer 126 and its vicinity when the upper surface of the resin layer 126 is flat. Figure 19A is an example where the width of the organic layer 112R, etc. is greater than that of the pixel electrode 111. Figure 19B is an example where their widths are roughly the same. Figure 19C is an example where the width of the organic layer 112R, etc. is smaller than that of the pixel electrode 111.

[0342] As shown in Figure 19A, since the organic layer 112R is provided covering the ends of the pixel electrodes 111, it is preferable that the ends of the pixel electrodes 111 have a tapered shape. This improves the stepped coverage of the organic layer 112R, resulting in a highly reliable display device.

[0343] Figures 19D, 19E, and 19F show an example where the upper surface of the resin layer 126 is concave. In this case, concave portions are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121, reflecting the concave upper surface of the resin layer 126.

[0344] Figures 20A, 20B, and 20C show an example where the upper surface of the resin layer 126 is convex. In this case, convex portions are formed on the upper surfaces of the organic layer 114, the common electrode 113, and the protective layer 121, reflecting the convex upper surface of the resin layer 126.

[0345] Figures 20D, 20E, and 20F show an example where a portion of the resin layer 126 covers a portion of the upper end and upper surface of the organic layer 112R, and a portion of the upper end and upper surface of the organic layer 112G. In this case, an insulating layer 125 is provided between the resin layer 126 and the upper surface of the organic layer 112R or the organic layer 112G.

[0346] Figures 20D, 20E, and 20F show an example where a portion of the upper surface of the resin layer 126 is concave. In this case, the organic layer 114, the common electrode 113, and the protective layer 121 form an uneven shape that reflects the shape of the resin layer 126.

[0347] The above is an explanation of an example of the resin layer's composition.

[0348] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0349] (Embodiment 7) This embodiment describes an example of the configuration of a display device that can be used in a light-receiving and receiving device according to one aspect of the present invention. Here, it is described as a display device capable of displaying images, but by using a light-emitting element as a light source, it can be used as a light-receiving and receiving device.

[0350] Figure 21A shows a schematic cross-sectional view of the display device 400. Figure 21A shows examples of cross-sections obtained by cutting a portion of the area including the FPC 472, a portion of the display unit 462, and a portion of the area including the connection portion of the display device 400. In Figure 21A, an example of a cross-section obtained by cutting a portion of the display unit 462, specifically the area including the light-emitting element 430b that emits green light (G) and the light-receiving element 440 that receives reflected light (L).

[0351] The display device 400 shown in Figure 21A has a transistor 260, a transistor 258, a light-emitting element 430b, and a light-receiving element 440, etc., between substrates 453 and 454.

[0352] The light-emitting element 430b and the light-receiving element 440 can be the light-emitting element or light-receiving element exemplified above.

[0353] Here, if the pixels of the display device have three types of subpixels that emit light-emitting elements of different colors, examples of such three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of such four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with light-emitting elements that emit infrared light.

[0354] Furthermore, the photodetector 440 can be a photoelectric converter that is sensitive to light in the red, green, or blue wavelength range, or a photoelectric converter that is sensitive to light in the infrared wavelength range.

[0355] The substrate 454 and the protective layer 416 are bonded together via an adhesive layer 442. The adhesive layer 442 is provided in superimposed on the light-emitting element 430b and the light-receiving element 440, and a solid encapsulation structure is applied to the display device 400. A light-shielding layer 417 is provided on the substrate 454.

[0356] The light-emitting element 430b and the light-receiving element 440 have conductive layers 411a, 411b, and 411c as pixel electrodes. Conductive layer 411b is reflective to visible light and functions as a reflective electrode. Conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0357] The conductive layer 411a of the light-emitting element 430b is connected to the conductive layer 272b of the transistor 260 through an opening provided in the insulating layer 264. The transistor 260 has the function of controlling the driving of the light-emitting element. On the other hand, the conductive layer 411a of the photodetector element 440 is electrically connected to the conductive layer 272b of the transistor 258. The transistor 258 has the function of controlling the exposure timing using the photodetector element 440.

[0358] An EL layer 412G or a photoelectric conversion layer 412S is provided covering the pixel electrodes. An insulating layer 421 is provided in contact with the side surfaces of the EL layer 412G and the photoelectric conversion layer 412S, and a resin layer 422 is provided to fill the recesses of the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the EL layer 412G and the photoelectric conversion layer 412S. By providing a protective layer 416 covering the light-emitting element, it is possible to suppress the ingress of impurities such as water into the light-emitting element and improve the reliability of the light-emitting element.

[0359] The light G emitted by the light-emitting element 430b is emitted towards the substrate 454. The light-receiving element 440 receives the light L incident through the substrate 454 and converts it into an electrical signal. It is preferable to use a material with high transmittance to visible light for the substrate 454.

[0360] Transistors 260 and 258 are both formed on the substrate 453. These transistors can be manufactured using the same materials and processes.

[0361] Furthermore, transistors 260 and 258 may be manufactured to have different configurations. For example, transistors may be manufactured with or without a back gate, or transistors may be manufactured with different materials or thicknesses for the semiconductor, gate electrode, gate insulating layer, source electrode, and drain electrode, or both.

[0362] The substrate 453 and the insulating layer 262 are bonded together by an adhesive layer 455.

[0363] The method for manufacturing the display device 400 involves first bonding a fabricated substrate, on which an insulating layer 262, transistors, light-emitting elements, and light-receiving elements are provided, to a substrate 454 on which a light-shielding layer 417 is provided, using an adhesive layer 442. Then, the fabricated substrate is peeled off and a substrate 453 is attached to the exposed surface, thereby transferring the components formed on the fabricated substrate to the substrate 453. It is preferable that both the substrate 453 and the substrate 454 are flexible. This increases the flexibility of the display device 400.

[0364] A connection portion 254 is provided in the region of substrate 453 that does not overlap with substrate 454. At the connection portion 254, wiring 465 is electrically connected to FPC 472 via conductive layer 466 and connection layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and FPC 472 to be electrically connected via the connection layer 292.

[0365] Transistors 260 and 258 have a conductive layer 271 that functions as a gate, an insulating layer 261 that functions as a gate insulating layer, a semiconductor layer 281 having a channel forming region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 that functions as a gate insulating layer, a conductive layer 273 that functions as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel forming region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel forming region 281i.

[0366] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n via openings provided in the insulating layer 265. Of the conductive layer 272a and the conductive layer 272b, one functions as a source and the other functions as a drain.

[0367] Figure 21A shows an example in which the insulating layer 275 covers the top and sides of the semiconductor layer. The conductive layer 272a and conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and insulating layer 265, respectively.

[0368] On the other hand, in the transistor 259 shown in Figure 21B, the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281, but does not overlap with the low-resistance region 281n. For example, the structure shown in Figure 21B can be fabricated by processing the insulating layer 275 using the conductive layer 273 as a mask. In Figure 21B, an insulating layer 265 is provided covering the insulating layer 275 and the conductive layer 273, and the conductive layers 272a and 272b are connected to the low-resistance region 281n, respectively, through openings in the insulating layer 265. Furthermore, an insulating layer 268 covering the transistor may also be provided.

[0369] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0370] Transistors 260 and 258 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0371] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited, and any amorphous semiconductor, single-crystal semiconductor, or semiconductor having crystalline properties other than single crystal (microcrystalline semiconductor, polycrystalline semiconductor, or semiconductor having a crystalline region in part) may be used. Using a single-crystal semiconductor or a semiconductor having crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0372] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0373] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced.

[0374] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and gallium is more preferred. A metal oxide containing indium, M, and zinc may hereafter be referred to as In-M-Zn oxide.

[0375] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer of the transistor. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO) may be used as the semiconductor layer of the transistor. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (IAGZO) may be used as the semiconductor layer.

[0376] Furthermore, in the case of an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. The atomic ratios of the metal elements in such an In-M-Zn oxide include: In:M:Zn=1:1:1 or near thereto, In:M:Zn=1:1:1.2 or near thereto, In:M:Zn=1:3:2 or near thereto, In:M:Zn=1:3:4 or near thereto, In:M:Zn=2:1:3 or near thereto, In:M:Zn=3:1:2 or near thereto, In:M:Zn=4:2: Compositions such as 3 or near thereto, In:M:Zn=4:2:4.1 or near thereto, In:M:Zn=5:1:3 or near thereto, In:M:Zn=5:1:6 or near thereto, In:M:Zn=5:1:7 or near thereto, In:M:Zn=5:1:8 or near thereto, In:M:Zn=6:1:6 or near thereto, In:M:Zn=5:2:5 or near thereto, etc. Note that near thereto compositions include a range of ±30% of the desired atomic ratio. Increasing the atomic ratio of indium in the metal oxide can increase the on-current or field-effect mobility of the transistor.

[0377] For example, when describing an atomic ratio of In:Ga:Zn = 4:2:3 or a composition close to that, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing an atomic ratio of In:Ga:Zn = 5:1:6 or a composition close to that, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing an atomic ratio of In:Ga:Zn = 1:1:1 or a composition close to that, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0378] Furthermore, the atomic ratio of In in an In-M-Zn oxide may be less than the atomic ratio of M. Examples of such atomic ratios of metal elements in an In-M-Zn oxide include compositions where In:M:Zn = 1:3:2 or nearby, In:M:Zn = 1:3:3 or nearby, In:M:Zn = 1:3:4 or nearby, etc. By increasing the atomic ratio of M in the metal oxide, it is possible to increase the band gap of the In-M-Zn oxide and improve its resistance to photonegative bias stress testing. Specifically, it is possible to reduce the change in threshold voltage or the change in shift voltage (Vsh) measured in the NBTIS (Negative Bias Temperature Illumination Stress) test of a transistor. Note that the shift voltage (Vsh) is defined as the Vg at which the tangent line at the point where the slope of the drain current (Id)-gate voltage (Vg) curve is maximum intersects the straight line where Id = 1 pA.

[0379] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon and single-crystal silicon).

[0380] Alternatively, the semiconductor layer of a transistor may have a layered material that functions as a semiconductor. A layered material is a general term for a group of materials having a layered crystalline structure. A layered crystalline structure is a structure in which layers formed by covalent or ionic bonds are stacked via weaker bonds than covalent or ionic bonds, such as van der Waals forces. Layered materials have high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-current can be provided.

[0381] Examples of the above-mentioned layered materials include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogens (elements belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides applicable as semiconductor layers in transistors include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum tellurium (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten tellurium (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0382] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0383] It is preferable to use an inorganic insulating film for insulating layer 261, insulating layer 262, insulating layer 265, insulating layer 268, and insulating layer 275. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above-mentioned inorganic insulating films may be laminated together.

[0384] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 400. This prevents impurities from entering through the organic insulating film from the edge of the display device 400. Alternatively, the organic insulating film may be formed so that its edge is inside the edge of the display device 400, so that the organic insulating film is not exposed at the edge of the display device 400.

[0385] An organic insulating film is preferred for the insulating layer 264, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0386] It is preferable to provide a light-shielding layer 417 on the surface of the substrate 454 that faces the substrate 453. Various optical components can also be placed on the outside of the substrate 454. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 454.

[0387] Figure 21A shows the connection section 278. At the connection section 278, the common electrode 413 and the wiring are electrically connected. Figure 21A shows an example where the same stacked structure as the pixel electrode is applied as the wiring.

[0388] Substrates 453 and 454 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting element should be made of a material that transmits the light. Using flexible materials for substrates 453 and 454 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 453 or substrate 454.

[0389] Substrates 453 and 454 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 453 and 454 may be made of glass of a thickness sufficient to provide flexibility.

[0390] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0391] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0392] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic resin film.

[0393] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0394] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0395] As the connecting layer 292, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0396] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0397] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, and for conductive layers of light-emitting elements (conductive layers that function as pixel electrodes or common electrodes).

[0398] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0399] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0400] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0401] (Embodiment 8) In this embodiment, an example of installing a display device according to one aspect of the present invention inside a vehicle will be described with reference to Figures 22 and 23.

[0402] The display device shown in Embodiment 1 can be suitably used in the light-receiving and light-emitting section of the display device 61A shown in Figure 22. The vehicle control device has a hemispherical shape and is fitted into the dashboard or the like for fixing. Figure 22 also shows an example in which a display device 61B is provided on the rear seat side, which has a shape like a hemisphere of the same diameter placed on one plane of a cylinder. The display devices 61A and 61B can be configured to provide power or video signals from below. The display devices 61A and 61B can also be used as interior lights.

[0403] While Figure 22 shows examples of vehicles such as electric cars, the applications are not limited to any vehicle. Curved, typically spherical or hemispherical, display panels can be mounted on agricultural machinery, motorized bicycles including electric-assist bicycles, motorcycles, electric wheelchairs, electric carts, small or large vessels, submarines, fixed-wing or rotary-wing aircraft, and other aircraft. Furthermore, curved, typically spherical or hemispherical, display panels can also be mounted on transport vehicles such as buses, passenger planes, helicopters, and spacecraft.

[0404] Furthermore, the display device shown in Embodiment 1 can be used in the steering wheel shown in Figures 23A to 23F.

[0405] The steering wheel 41A shown in Figure 23A has a configuration in which the display device 10A described in Embodiment 1 is fitted into the center. By having the display device 10A, the steering wheel 41A can be made into a steering wheel with excellent design.

[0406] Figure 23B also shows an unfolded view of the various components of the display device 10A in the steering wheel 41A shown in Figure 23A. As shown in Figure 23B, in one embodiment of the present invention, the display device 10A can be configured such that the display panel 11 is fixed in contact with the surface of the fixing member 20. Therefore, the driver can operate the display panel 11, and damage to the display panel 11 can be suppressed, resulting in a steering wheel with a display device that is excellent in terms of convenience and reliability. An airbag can also be housed in the housing 30. In this case, the display panel 11 will also be ejected when the airbag deploys, but since the display panel 11 has a non-rectangular, flexible substrate, it can be configured to be safer than a display panel with a glass substrate. Furthermore, since the display panel 11 is made up of multiple display panels, it can be configured so that the display panels 11 disperse and scatter when the airbag deploys, thus providing an even safer configuration.

[0407] The steering wheel 41B shown in Figure 23C has a configuration in which the display device 10B described in Embodiment 1 is fitted into the center. By having the display device 10B, the steering wheel 41B can be made into a steering wheel with excellent design.

[0408] Figure 23D also shows an unfolded view of the various components of the display device 10B in the steering wheel 41B shown in Figure 23C. As shown in Figure 23D, the display device 10B in one embodiment of the present invention can be configured such that the display panels 11a and 11b are fixed in contact with the surface of the fixing member 20. Therefore, the driver can operate the display panels 11a and 11b, and damage to the display panels 11a and 11b can be suppressed, resulting in a steering wheel with a display device that is superior in convenience and reliability. The housing 30 can also house an airbag. In this case, when the airbag deploys, the display panels 11a and 11b will also deploy, but since the display panels 11a and 11b have a non-rectangular, flexible substrate, the safety can be enhanced compared to a display panel having a glass substrate. Furthermore, since the display panels 11a and 11b are made up of multiple display panels, when the airbag deploys, the display panels 11a and 11b can be dispersed and scattered, resulting in an even safer configuration.

[0409] The steering wheel 41C shown in Figure 23E has a configuration in which the display device 10C described in Embodiment 1 is fitted into the center. By having the display device 10C, the steering wheel 41C can be made into a steering wheel with excellent design.

[0410] Figure 23F also shows an unfolded view of the various components of the display device 10C in the steering wheel 41C shown in Figure 23E. As shown in Figure 23F, the display device 10C in one embodiment of the present invention can be configured such that the display panel 11f is fixed in contact with the surface of the fixing member 20. Therefore, the driver can operate the display panel 11f, and damage to the display panel 11f can be suppressed, resulting in a steering wheel with a display device that is excellent in terms of convenience and reliability. An airbag can also be housed in the housing 30. In this case, the display panel 11f will also be ejected when the airbag deploys, but since the display panel 11f has a non-rectangular, flexible substrate, it can be configured to be safer than a display panel with a glass substrate. Furthermore, since the display panel 11f is covered with a protective substrate 40, it can be configured to be even safer.

[0411] As described above, by adopting the configuration of one aspect of the present invention, the degree of design freedom for the display device is increased, and the design, convenience, and reliability of the display device can be improved. Furthermore, the display device according to one aspect of the present invention can be suitably used when mounted on a vehicle or the like.

[0412] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0413] <Notes regarding the description in this specification, etc.> The above embodiments and a description of each component in those embodiments are provided below.

[0414] The configurations shown in each embodiment can be appropriately combined with the configurations shown in other embodiments to form one aspect of the present invention. Furthermore, if multiple configuration examples are shown within a single embodiment, these configuration examples can be appropriately combined.

[0415] Furthermore, the content described in one embodiment (even if only a part of it) can be applied to, combined with, or substituted for other content described in the same embodiment (even if only a part of it), and / or content described in one or more other embodiments (even if only a part of it).

[0416] The content described in the embodiments refers to the content described using various figures or the content described using text in the specification in each embodiment.

[0417] Furthermore, a diagram (even a part of it) described in one embodiment can be combined with another part of that diagram, another diagram (even a part of it) described in that embodiment, and / or a diagram (even a part of it) described in one or more other embodiments to form even more diagrams.

[0418] Furthermore, in this specification, block diagrams classify components by function and show them as independent blocks. However, in actual circuits, it is difficult to separate components by function, and there may be cases where multiple functions are involved in a single circuit, or where a single function is involved across multiple circuits. Therefore, the blocks in the block diagrams are not limited to the components described in the specification, and can be appropriately rephrased depending on the situation.

[0419] Furthermore, in the drawings, the size, layer thickness, or area are shown at arbitrary sizes for the sake of explanation. Therefore, they are not necessarily limited to that scale. Also, the drawings are schematic for clarity and are not limited to the shapes or values ​​shown in the drawings. For example, they may include variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing differences.

[0420] In this specification and other documents, when describing the connections of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used. This is because the source and drain of a transistor vary depending on the transistor's structure or operating conditions. The terms source and drain of a transistor can be appropriately rephrased as source (drain) terminal or source (drain) electrode, depending on the context.

[0421] Furthermore, the terms "electrode" and "wiring" in this specification do not functionally limit these components. For example, "electrode" may be used as part of "wiring," and vice versa. Moreover, the terms "electrode" and "wiring" also include cases where multiple "electrodes" and "wiring" are formed as a single unit.

[0422] Furthermore, in this specification, voltage and potential may be used interchangeably as appropriate. Voltage is the potential difference from a reference potential; for example, if the reference potential is the ground voltage (earth voltage), then voltage can be replaced with potential. Ground potential does not necessarily mean 0V. Note that potential is relative, and depending on the reference potential, it may change the potential applied to wiring, etc.

[0423] In this specification, terms such as "film" and "layer" may be interchanged depending on the context or situation. For example, the term "conductive layer" may be changed to "conductive film." Or, for example, the term "insulating film" may be changed to "insulating layer."

[0424] In this specification, a switch refers to a device that has the function of controlling whether or not to allow current to flow by being in a conductive state (on state) or a non-conductive state (off state). Alternatively, a switch refers to a device that has the function of selecting and switching the path through which current flows.

[0425] In this specification, channel length refers, for example, to the distance between the source and drain in the region where the semiconductor (or the part of the semiconductor through which current flows when the transistor is ON) and the gate overlap in a top view of a transistor, or in the region where the channel is formed.

[0426] In this specification, channel width refers, for example, to the length of the region where the semiconductor (or the part of the semiconductor through which current flows when the transistor is ON) and the gate electrode overlap, or the region in which the channel is formed, where the source and drain face each other.

[0427] In this specification, "A and B are connected" includes not only those that are directly connected, but also those that are electrically connected. Here, "electrically connected" means that when there is an object between A and B that has some kind of electrical effect, it enables the exchange of electrical signals between A and B. [Explanation of symbols]

[0428] 10A: Display device, 10B: Display device, 10C: Display device, 11a: Display panel, 11b: Display panel, 11c: Display panel, 11f: Display panel, 11p: Display panel, 11q: Display panel, 11: Display panel, 12: FPC, 13: Source driver circuit, 14: Display section, 15: Non-display section, 16: Pixel, 17: Gate driver circuit, 18: Bending section, 19: Notch section, 20: Fixing member, 21: Curved surface, 22: Curved surface, 23: Flat surface, 30: Housing, 40: Protective substrate

Claims

1. A steering wheel having a display device and an airbag, The aforementioned display device is A fixing member having a curved surface, Multiple display panels that are flexible and fixed to the fixing member along the curved surface, The housing has the function of housing the FPCs that each of the airbags and the plurality of display panels has, The display panel has a notch and a bent portion, The display panel has a shape in which the notched portion is positioned at the corner of the fixing member, the bent portion is bent along the edge of the upper surface of the fixing member, and the edges in the bent area are joined together. Each of the aforementioned plurality of display panels has a display unit and a gate driver circuit, At least one transistor in the gate driver circuit is located in a region surrounded by a plurality of pixel circuits in the display unit. Steering wheel.

2. A steering wheel having a display device and an airbag, The aforementioned display device is A fixing member having a curved surface, Multiple display panels that are flexible and fixed to the fixing member along the curved surface, A housing having the function of housing the FPCs of each of the airbags and the plurality of display panels, It has, The display panel has a notch and a bent portion, The display panel has a shape in which the notched portion is positioned at the corner of the fixing member, the bent portion is bent along the edge of the upper surface of the fixing member, and the edges in the bent area are joined together. Each of the aforementioned plurality of display panels has a display unit, a gate driver circuit, and a source driver circuit. The transistors in the source driver circuit are not located in the region surrounded by the multiple pixel circuits of the display unit. At least one transistor in the gate driver circuit is located in a region surrounded by a plurality of pixel circuits in the display unit. Steering wheel.

3. A steering wheel having a display device and an airbag, The aforementioned display device is A fixing member having a flat surface and a curved surface, A first display panel having flexibility and being fixed to the fixing member along the plane, A plurality of second display panels that are flexible and fixed to the fixing member along the curved surface, The housing has the function of housing the airbag and the FPCs that each of the first display panel and the plurality of second display panels has, The display panel has a notch and a bent portion, The display panel has a shape in which the notched portion is positioned at the corner of the fixing member, the bent portion is bent along the edge of the upper surface of the fixing member, and the edges in the bent area are joined together. Each of the first display panel and the plurality of second display panels has a display unit and a gate driver circuit, At least one transistor in the gate driver circuit is located in a region surrounded by a plurality of pixel circuits in the display unit. Steering wheel.

4. A steering wheel having a display device and an airbag, The display device includes a fixed member having a flat surface and a curved surface, A first display panel having flexibility and being fixed to the fixing member along the plane, A plurality of second display panels that are flexible and fixed to the fixing member along the curved surface, The housing has the function of housing the airbag and the FPCs that each of the first display panel and the plurality of second display panels has, The display panel has a notch and a bent portion, The display panel has a shape in which the notched portion is positioned at the corner of the fixing member, the bent portion is bent along the edge of the upper surface of the fixing member, and the edges in the bent area are joined together. Each of the first display panel and the plurality of second display panels includes a display unit, a gate driver circuit, and a source driver circuit. The transistors in the source driver circuit are not located in the region surrounded by the multiple pixel circuits of the display unit. At least one transistor in the gate driver circuit is located in a region surrounded by a plurality of pixel circuits in the display unit. Steering wheel.

5. In any one of claims 1 to 4, The fixing member is made of plastic. Steering wheel.

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