Display devices and electronic equipment

Abstract

Provided is a display device having a plurality of antennas superimposed on display unit. This display device has a flexible first substrate and second substrate. An electroconductive layer and a plurality of display elements are provided between the first substrate and the second substrate. One region where the first substrate and the second substrate overlap has a curved part. The electroconductive layer, which has a region overlapping the one region, has a region having a curvature. The plurality of display elements are provided between the first substrate and the electroconductive layer. The electroconductive layer as a plurality of openings. The display elements have regions that overlap the openings. The electroconductive layer functions as an antenna.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., antennas, touch panels, etc.), methods for driving them, methods for using them, or methods for manufacturing them.

[0003] In this specification, the term "semiconductor device" refers to any device that can function by utilizing semiconductor properties. Transistors and semiconductor circuits are examples of semiconductor devices. Furthermore, memory devices, display devices, imaging devices, and electronic devices may contain semiconductor devices. [Background technology]

[0004] The development of information technologies such as the Internet of Things (IoT) has led to an increase in the amount of data transmitted and received. To cope with this increase in data volume, a new communication standard called the fifth-generation mobile communication system (5G) is being considered, which will achieve faster communication speeds, more simultaneous connections, and shorter latency than the fourth-generation mobile communication system (4G) (see, for example, Patent Document 1). While 4G uses communication frequencies below 3.6 GHz, 5G will use communication frequencies selected from the Sub6 band below 6 GHz and the millimeter wave band from 28 GHz to 300 GHz.

[0005] As the communication frequency increases, the amount of information that can be transmitted and received increases, but the communication range decreases. To efficiently receive radio waves, beamforming technology using antennas arranged in an array is effective. For example, when transmitting and receiving at a communication frequency of 28 GHz (wavelength: approximately 10 mm), a configuration in which antennas are spaced approximately 5 mm apart (half a wavelength) is effective. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] International Publication No. 2017 / 026590 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] Display devices such as smartphones that perform mobile communications require miniaturization of integrated circuits (ICs), including antennas. Arranging multiple antennas within an integrated circuit according to 5G communication standards presents a trade-off with the need for miniaturized integrated circuits. Achieving both an evenly spaced antenna configuration and a miniaturized integrated circuit configuration has been challenging.

[0008] Therefore, one aspect of the present invention aims to provide a display device having an antenna. Alternatively, one aspect aims to provide a display device in which a plurality of antennas are provided on the display unit. Alternatively, one aspect aims to provide a display device with a novel configuration. Alternatively, one aspect aims to provide a novel semiconductor device.

[0009] Furthermore, the description of these problems does not preclude the existence of other problems. Moreover, one aspect of the present invention does not need to solve all of these problems. Other problems will naturally become apparent from the description in the specification, drawings, and claims, and it is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0010] One aspect of the present invention relates to a display device having a plurality of antennas superimposed on a display unit.

[0011] One aspect of the present invention is a display device comprising a first substrate and a second substrate having overlapping regions, wherein the first substrate and the second substrate are flexible, and a conductive layer and a plurality of display elements are provided between the first substrate and the second substrate, the overlapping region of the first substrate and the second substrate has a curved surface, the conductive layer having the overlapping region has a curvatured region, the plurality of display elements are provided between the first substrate and the conductive layer, the conductive layer has a plurality of apertures, one of the plurality of display elements has a region overlapping with one of the plurality of apertures, and the conductive layer functions as an antenna.

[0012] Another aspect of the present invention is a display device comprising a first substrate and a second substrate having overlapping regions, wherein the first substrate and the second substrate are flexible, and a conductive layer and a plurality of display elements are provided between the first substrate and the second substrate, the overlapping region of the first substrate and the second substrate has a first region on which a concave curved surface can be formed, the conductive layer having the region overlapping with the first region can have curvature, the plurality of display elements are provided between the first substrate and the conductive layer, the conductive layer has a plurality of apertures, one of the plurality of display elements has a region overlapping with one of the plurality of apertures, and the conductive layer functions as an antenna.

[0013] In the above configuration, the first substrate and the second substrate overlap, and a second region has a convex curved surface portion that can be formed at a position separated from the first region, and the conductive layer having a region overlapping with the second region can have curvature.

[0014] Another aspect of the present invention is a display device comprising a first substrate and a second substrate having overlapping regions, wherein a plurality of conductive layers and a plurality of display elements are provided between the first substrate and the second substrate, the plurality of display elements are provided between the first substrate and the plurality of conductive layers, the conductive layers have a plurality of apertures, one of the plurality of display elements has a region that overlaps with one of the plurality of apertures, the conductive layers have the function of an antenna and the function of an electrode for a touch sensor, and the function is switchable.

[0015] Preferably, the conductive layer comprises a metal selected from silver, copper, or aluminum.

[0016] Another aspect of the present invention is a display device comprising: a first substrate and a second substrate that have regions overlapping each other; a first conductive layer, a second conductive layer, and a plurality of display elements provided between the first substrate and the second substrate; wherein the first conductive layer is provided separately from the second conductive layer at a position closer to the first substrate than the second conductive layer; the plurality of display elements are provided between the first substrate and the first conductive layer and between the first substrate and the second conductive layer; each of the first conductive layer and the second conductive layer has a plurality of openings; one of the plurality of display elements has a region overlapping one of the plurality of openings included in the first conductive layer and the second conductive layer; the first conductive layer functions as an antenna; and the second conductive layer functions as an electrode of a touch sensor.

[0017] The first conductive layer and the second conductive layer may be configured to have no regions overlapping each other. Alternatively, the first conductive layer and the second conductive layer may be configured to have regions overlapping each other.

[0018] Preferably, each of the first conductive layer and the second conductive layer comprises a metal selected from silver, copper, or aluminum.

[0019] An organic EL element can be used as the display element. Effects of the Invention

[0020] According to one aspect of the present invention, a display device comprising an antenna can be provided. Alternatively, a display device in which a plurality of antennas are provided in a display portion can be provided. Alternatively, a display device with a novel configuration or the like can be provided. Alternatively, a novel semiconductor device or the like can be provided.

[0021] The recitation of a plurality of effects does not preclude the existence of other effects. Furthermore, one embodiment of the present invention does not necessarily need to have all of the exemplified effects. Moreover, with respect to one embodiment of the present invention, problems, effects, and novel features other than those described above will become apparent from the description of the present specification and the drawings. [BRIEF DESCRIPTION OF THE DRAWINGS]

[0022] FIG. 1 is a diagram illustrating a configuration example of a display device. FIG. 2 is a diagram illustrating a configuration example of the display device. FIG. 3A is a diagram illustrating a configuration example of a display device. FIG. 3B is a diagram illustrating a circuit connected to an antenna. FIGS. 4A to 4C are diagrams illustrating a configuration example of a display device. FIGS. 5A to 5C are diagrams illustrating a configuration example of a display device. FIGS. 6A to 6C are diagrams illustrating a configuration example of a display device. FIGS. 7A and 7B are diagrams illustrating a configuration example of a conductive layer. FIGS. 8A to 8F are diagrams illustrating a configuration example of a conductive layer. FIGS. 9A and 9B are diagrams illustrating a configuration example of a display device. FIGS. 10A and 10B are diagrams illustrating a configuration example of a display device. FIGS. 11A to 11D are diagrams showing a configuration example of a display device. FIGS. 12A to 12D are diagrams showing a configuration example of a display device. FIGS. 13A and 13B are diagrams illustrating a configuration example of a display device. FIGS. 14A and 14B are diagrams illustrating a configuration example of a display device. FIGS. 15A and 15B are diagrams illustrating a configuration example of a display device. FIGS. 16A and 16B are diagrams illustrating a configuration example of a display device. FIGS. 17A and 17B are diagrams illustrating a configuration example of a display device. FIGS. 18A and 18B are diagrams illustrating a configuration example of a display device. Figures 19A to 19E illustrate examples of pixel and conductive layer configurations. Figures 20A to 20H illustrate examples of pixel and conductive layer configurations. Figures 21A and 21B show examples of electronic device configurations. Figure 22 shows an example of an integrated circuit configuration. Figures 23A to 23C illustrate examples of the configuration of a display device. Figures 24A to 24D illustrate examples of the configuration of a display device. Figures 25A to 25C illustrate examples of the configuration of a display device. Figures 26A to 26D illustrate examples of the configuration of a display device. Figures 27A to 27F illustrate examples of the configuration of a display device. Figures 28A to 28F illustrate examples of the configuration of a display device. Figures 29A, 29B, and 29D are cross-sectional views showing examples of display devices. Figures 29C and 29E are diagrams showing examples of images. Figures 29F through 29H are top views showing examples of pixels. Figure 30A is a cross-sectional view showing an example of the configuration of a display device. Figures 30B to 30D are top views showing examples of pixels. Figure 31A is a cross-sectional view showing an example of the configuration of a display device. Figures 31B to 31I are top views showing an example of a pixel. Figures 32A to 32F show examples of the configuration of a light-emitting device. Figures 33A and 33B show examples of configurations for light-emitting and light-receiving devices. Figures 34A and 34B illustrate an example configuration of a display device. Figure 34C illustrates an example configuration of a transistor. Figures 35A to 35D illustrate examples of the configuration of a display device. Figures 36A to 36F show examples of pixels. Figures 36G and 36H show examples of pixel circuit diagrams. Figure 37 illustrates an example configuration of a touch panel, etc. Figures 38A to 38F illustrate examples of the configuration of electronic equipment. Figures 39A to 39C illustrate examples of the configuration of electronic equipment. Figures 40A to 40C illustrate examples of the configuration of electronic equipment. Figures 41A to 41E illustrate examples of the configuration of electronic equipment. [Modes for carrying out the invention]

[0023] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope. Therefore, the present invention is not to be construed as being limited to the contents of the following embodiments.

[0024] Furthermore, when it is stated in this specification that X and Y are connected, it is assumed that this specification discloses the cases in which X and Y are electrically connected, functionally connected, and directly connected. Therefore, it is assumed that the disclosed connections are not limited to predetermined connections, such as those shown in the figures or text, but also include connections other than those shown in the figures or text. X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0025] One example of a case where X and Y are electrically connected is that one or more elements that enable electrical connection between X and Y (e.g., switches, transistors, capacitive elements, inductors, resistors, diodes, display devices, light-emitting devices, loads, etc.) can be connected between X and Y. Note that a switch has an on state and an off state. In other words, a switch has the function of controlling whether or not current flows by being in a conductive state (on state) or a non-conductive state (off state).

[0026] One example of a functional connection between X and Y is when one or more circuits that enable the functional connection between X and Y (for example, logic circuits (inverters, NAND gates, NOR gates, etc.), signal conversion circuits (digital-to-analog conversion circuits, analog-to-digital conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boost circuits, buck circuits, etc.), level shifter circuits that change the potential level of a signal, etc.), voltage sources, current sources, switching circuits, amplification circuits (circuits that can increase the signal amplitude or current amount, such as operational amplifiers, differential amplifiers, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) can be connected between X and Y.

[0027] Furthermore, when it is explicitly stated that X and Y are electrically connected, this includes both cases where X and Y are electrically connected (i.e., connected with another element or circuit in between) and cases where X and Y are directly connected (i.e., connected without another element or circuit in between).

[0028] Furthermore, for example, it can be expressed as, "X, Y, the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor are electrically connected to each other, and the connection is in the order of X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y." Alternatively, it can be expressed as, "The source (or first terminal, etc.) of the transistor is electrically connected to X, and the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are electrically connected in this order." Alternatively, it can be expressed as, "X is electrically connected to Y via the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are provided in this connection order." By using similar notation to these examples to define the order of connections in a circuit configuration, the source (or first terminal, etc.) and drain (or second terminal, etc.) of a transistor can be distinguished and their technical scope determined. Note that these notational methods are examples only and are not limited to them. Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

[0029] Even if independent components are shown as electrically connected in a circuit diagram, a single component may possess the functions of multiple components. For example, if part of a wire also functions as an electrode, a single conductive film possesses the functions of both the wire and the electrode. Therefore, in this specification, "electrically connected" includes cases where a single conductive film possesses the functions of multiple components.

[0030] Furthermore, in this specification, "capacitive element" can refer to, for example, a circuit element having a capacitance value higher than 0F, a region of wiring having a capacitance value higher than 0F, parasitic capacitance, the gate capacitance of a transistor, etc. Therefore, in this specification, "capacitive element" includes not only a circuit element comprising a pair of electrodes and a dielectric material contained between the electrodes, but also parasitic capacitance occurring between wirings, the gate capacitance occurring between one of the sources or drains of a transistor and the gate, etc. Also, terms such as "capacitive element," "parasitic capacitance," and "gate capacitance" can be replaced with terms such as "capacitance," and conversely, the term "capacitance" can be replaced with terms such as "capacitive element," "parasitic capacitance," and "gate capacitance." Also, the term "pair of electrodes" in "capacitance" can be replaced with terms such as "pair of conductors," "pair of conductive regions," and "pair of regions." The capacitance value can be, for example, 0.05fF or more and 10pF or less. Alternatively, it may be, for example, 1pF or more and 10μF or less.

[0031] Furthermore, in this specification, a transistor has three terminals called the gate, source, and drain. The gate is a control terminal that controls the conduction state of the transistor. The two terminals that function as either the source or the drain are the input and output terminals of the transistor. Depending on the conductivity type of the transistor (n-channel type, p-channel type) and the potential applied to the three terminals of the transistor, one of the two input and output terminals becomes the source and the other becomes the drain. For this reason, in this specification, the terms source and drain can be used interchangeably. Also, in this specification, when describing the connection relationships of a transistor, the notation "one of the source or drain" (or first electrode, or first terminal) and "the other of the source or drain" (or second electrode, or second terminal) is used. Depending on the structure of the transistor, in addition to the three terminals described above, there may be a back gate. In this case, in this specification, one of the gate or back gate of the transistor may be called the first gate, and the other of the gate or back gate of the transistor may be called the second gate. Furthermore, in the same transistor, the terms "gate" and "back gate" may be interchangeable. Furthermore, if a transistor has three or more gates, in this specification, each gate may be referred to as the first gate, second gate, third gate, and so on.

[0032] Furthermore, in this specification, the term "node" can be replaced with terminals, wiring, electrodes, conductive layers, conductors, impurity regions, etc., depending on the circuit configuration, device structure, etc. Also, terminals, wiring, etc. can be replaced with "node".

[0033] Furthermore, the ordinal numbers "1st," "2nd," and "3rd" in this specification are used to avoid confusion of constituent elements. Therefore, they do not limit the number of constituent elements, nor do they limit the order of the constituent elements. For example, a constituent element referred to as "1st" in one embodiment of this specification may be referred to as "2nd" in another embodiment or in the claims. Also, for example, a constituent element referred to as "1st" in one embodiment of this specification may be omitted in another embodiment or in the claims.

[0034] Furthermore, in this specification, phrases indicating arrangement such as "above," "below," "upward," or "downward" are sometimes used for convenience to explain the positional relationship between components with reference to the drawings. Also, the positional relationship between components changes as appropriate depending on the direction in which each component is depicted. Therefore, the phrases explained in the specification are not limited to those described and can be appropriately rephrased depending on the situation. For example, the expression "insulator located on the upper surface of the conductor" can be rephrased as "insulator located on the lower surface of the conductor" by rotating the orientation of the drawing shown by 180 degrees.

[0035] Furthermore, the terms "above" and "below" do not limit the positional relationship of the components to being directly above or below each other and in direct contact. For example, the expression "electrode B on insulating layer A" does not require electrode B to be formed in direct contact with insulating layer A, and does not exclude cases where other components are included between insulating layer A and electrode B.

[0036] Furthermore, in this specification, terms such as "overlapping" do not limit the state of the stacking order of the components. For example, the expression "electrode B overlapping insulating layer A" does not exclude not only the state in which electrode B is formed on top of insulating layer A, but also the state in which electrode B is formed below insulating layer A or the state in which electrode B is formed to the right (or left) of insulating layer A.

[0037] Furthermore, in this specification, the terms "adjacent" and "proximity" are not limited to direct contact between components. For example, the expression "electrode B adjacent to insulating layer A" does not require that insulating layer A and electrode B be formed in direct contact, and does not exclude cases where other components are included between insulating layer A and electrode B.

[0038] Furthermore, in this specification, terms such as "film" and "layer" can be interchanged as needed. For example, the term "conductive layer" may be changed to the term "conductive film." Or, for example, the term "insulating film" may be changed to the term "insulating layer." Alternatively, depending on the circumstances, terms such as "film" and "layer" can be omitted and replaced with other terms. For example, the term "conductive layer" or "conductive film" may be changed to the term "conductor." Or, the term "conductor" may be changed to the term "conductive layer" or "conductive film." Alternatively, for example, the term "insulating layer" or "insulating film" may be changed to the term "insulator." Or, the term "insulator" may be changed to the term "insulating layer" or "insulating film."

[0039] Furthermore, in this specification, terms such as "electrode," "wiring," and "terminal" do not functionally limit these components. For example, "electrode" may be used as part of "wiring," and vice versa. Moreover, the terms "electrode" or "wiring" include cases where multiple "electrodes" or "wiring" are formed as a single unit. Similarly, for example, "terminal" may be used as part of "wiring" or "electrode," and vice versa. Furthermore, the term "terminal" also includes cases where multiple "electrodes," "wiring," or "terminals" are formed as a single unit. Therefore, for example, an "electrode" can be part of "wiring" or a "terminal," and for example, a "terminal" can be part of "wiring" or an "electrode." In addition, terms such as "electrode," "wiring," and "terminal" may be replaced with terms such as "region" depending on the circumstances.

[0040] Furthermore, in this specification, terms such as "wiring," "signal line," and "power line" can be interchanged with each other depending on the circumstances or situation. For example, the term "wiring" may be changed to the term "signal line." Also, for example, the term "wiring" may be changed to the term "power line." Similarly, the reverse is also true; terms such as "signal line" and "power line" may be changed to the term "wiring." Terms such as "power line" may be changed to the term "signal line." Similarly, the reverse is also true; terms such as "signal line" may be changed to the term "power line." In addition, the term "potential" applied to the wiring may be changed to the term "signal," depending on the circumstances or situation. Similarly, the reverse is also true; terms such as "signal" may be changed to the term "potential."

[0041] In this specification, "parallel" means that two lines are positioned at an angle of -10° or more and 10° or less. Therefore, the case of -5° or more and 5° or less is also included. "Approximately parallel" or "roughly parallel" means that two lines are positioned at an angle of -30° or more and 30° or less. "Perpendicular" means that two lines are positioned at an angle of 80° or more and 100° or less. Therefore, the case of 85° or more and 95° or less is also included. "Approximately perpendicular" or "roughly perpendicular" means that two lines are positioned at an angle of 60° or more and 120° or less.

[0042] In this specification, when count values ​​and measured values ​​are referred to as "identical," "same," "equal," or "uniform" (including synonyms thereof), unless otherwise explicitly stated, this refers to a margin of error of plus or minus 20%.

[0043] The embodiments described herein will be explained with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope. Therefore, the present invention is not to be interpreted as being limited to the contents of the embodiments. In the configuration of the invention in the embodiments, the same reference numerals are used in common across different drawings for the same parts or parts having similar functions, and repeated explanations may be omitted. Also, when referring to similar functions, the hatch patterns may be the same, and reference numerals may not be assigned. Furthermore, in order to make the drawings easier to understand, some components may be omitted in perspective views or top views, etc.

[0044] Furthermore, in the drawings and other illustrations relating to this specification, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to the size or aspect ratio. The drawings are schematic representations of ideal examples and are not limited to the shapes or values ​​shown in the drawings. For example, they may include variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing differences.

[0045] Furthermore, in drawings and other illustrations relating to this specification, arrows indicating the X, Y, and Z directions may be included. In this specification, the "X direction" refers to the direction along the X-axis, and unless explicitly stated, the forward and reverse directions may not be distinguished. The same applies to the "Y direction" and "Z direction." Also, the X, Y, and Z directions are directions that intersect each other. More specifically, the X, Y, and Z directions are directions that are orthogonal to each other. In this specification, one of the X, Y, or Z directions may be referred to as the "first direction" or "first direction." Another may be referred to as the "second direction" or "second direction." The remaining one may be referred to as the "third direction" or "third direction."

[0046] In this specification, when the same symbol is used for multiple elements, and especially when it is necessary to distinguish them, an identifying code such as "A", "b", "_1", "[n]", or "[m,n]" may be added to the symbol.

[0047] In this specification, a display device in which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached to the substrate constituting the display device, or in which an IC (Integrated Circuit) is directly mounted to the substrate constituting the display device using the COG (Chip On Glass) method, may be referred to as a display device or display module.

[0048] (Embodiment 1) This embodiment describes a display device according to one aspect of the present invention. This display device has multiple antennas in an area overlapping with the display unit, and has the function of transmitting and receiving data to and from the outside using these multiple antennas. Furthermore, electrodes for touch sensors can be provided between the multiple antennas, enabling the realization of an in-cell type display device having antennas and touch sensors.

[0049] Figure 1 is a schematic diagram illustrating a display device 100 according to one embodiment of the present invention. The display device according to one embodiment of the present invention comprises a display element and a conductive layer constituting an antenna between a pair of substrates. The display device according to one embodiment of the present invention has a plurality of antennas superimposed on the display portion.

[0050] The display device 100 includes a substrate 110, a substrate 120, an antenna 130, an FPC 112, and an FPC 122. Note that in Figure 1, etc., the substrate 120 may be shown with a dashed line for clarity. An antenna 130, composed of display elements and a conductive layer, is provided between the substrates 110 and 120. Image signals, etc., are input to the pixels having the display elements via the FPC 112. The antenna 130 is also connected to a signal transmission / reception circuit, etc., via the FPC 122. Note that the FPC 112 and FPC 122 may be combined into a single unit.

[0051] The conductive layer functioning as the antenna 130 is preferably arranged in a matrix with multiple layers, each having an opening in a mesh-like configuration. The openings and display elements are arranged so that they overlap each other. This configuration allows light emitted from the display elements to be emitted to the outside through the openings. Therefore, the conductive layer functioning as the antenna does not need to be light-transmitting. In other words, a metal or alloy with lower resistance than a light-transmitting conductive material can be used as the material for the conductive layer functioning as the antenna. Therefore, it can function as an antenna with reduced influence from wiring resistance and other factors.

[0052] Furthermore, because low-resistance materials can be used for the conductive layer, its line width can be made extremely thin. In other words, the surface area of ​​the conductive layer when viewed from the display side (plan view) can be reduced. Therefore, surface reflections can be suppressed, and the display quality can be improved. In addition, the transmission and reception of noise can be reduced. Moreover, because low-resistance materials can be used for the conductive layer, the conductive layer can be formed thinly, and bending resistance can be improved. By using flexible materials for the pair of substrates in which the display element and antenna are placed, a thin, lightweight, and flexible display device can be realized.

[0053] Furthermore, as the material for the conductive layer used in the antenna 130, metals such as silver, copper, and aluminum can be used. Alternatively, metal nanowires composed of many extremely thin conductors (for example, with a diameter of several nanometers) may be used. Examples include Ag nanowires, Cu nanowires, and Al nanowires. In the case of Ag nanowires, for example, a light transmittance of 89% or more and a sheet resistance of 40 Ω / □ to 100 Ω / □ can be achieved. Since such metal nanowires have high transmittance, they may also be used for electrodes used in display elements, such as pixel electrodes and common electrodes. Alternatively, graphene or carbon materials including carbon nanotubes may be used as the material for the conductive layer used in the antenna 130.

[0054] Figure 2 is a schematic diagram illustrating the configuration of the display unit and its surroundings in a display device 100 according to one embodiment of the present invention. The display unit 111 has a plurality of pixels 116 arranged in a matrix, as shown in the enlarged view. Preferably, each pixel 116 has a plurality of sub-pixels 33. Each sub-pixel 33 has a display element. The pixels 116 in the display unit 111 are electrically connected to a circuit 115. The circuit 115 can be, for example, a circuit that functions as a gate drive circuit. Signals can be supplied from the outside to either the display unit 111 or the circuit 115 or both via the FPC 112 and wiring 114a. Preferably, an IC 113a that functions as a source drive circuit is mounted on the substrate 110. The IC 113a can be mounted on the substrate 110 using the COG method or the COF method (mounted on the FPC 112).

[0055] Display elements that can be used in display devices include liquid crystal elements, organic EL elements, inorganic EL elements, LED elements, microcapsules, electrophoretic elements, electrowetting elements, electrofluidic elements, electrochromic elements, and MEMS elements.

[0056] Alternatively, a touch panel with touch sensor functionality can be used as the display device. In this case, IC113a may be configured to include a touch sensor controller, sensor driver, etc. Alternatively, IC113b, mounted on the board 110 using the COG method or COF method (mounted on FPC122), may be configured to include a touch sensor controller, sensor driver, etc. IC113b can be connected to a touch sensor, etc., via FPC122 and wiring 114b.

[0057] The touch panel can be an in-cell type, in which a touch sensor is integrated into the display device. In-cell type touch panels can achieve high light transmittance from the display elements. Furthermore, in-cell type touch panels can reduce the number of parts, thus reducing costs. Optical or capacitive touch sensors can be used in the touch panel. Note that the antenna and touch sensor, etc., according to one aspect of the present invention can also be applied to on-cell and out-cell types.

[0058] Figure 3A is a schematic diagram illustrating the antenna 130 and the like in a display device 100 according to one embodiment of the present invention. Multiple antennas 130_1 to 130_N (where N is an integer of 1 or more) can be provided by processing a conductive layer provided between a pair of substrates into a desired shape. The FPC 122 functions as wiring that provides electrical connections between the multiple antennas 130_1 to 130_N and the integrated circuit 141. The integrated circuit 141 can be provided, for example, on the side opposite to the display unit 111 provided on the substrate 110, and in an area that overlaps with the substrate 110. Although Figure 3A shows an example in which six antennas 130 are provided in one row (the row is defined as the direction of the short axis of the rectangular display device), four or fewer antennas, or six or more antennas, may be arranged in one row.

[0059] Antennas 130_1 to 130_N can be placed between substrate 110 and substrate 120. Alternatively, they may be placed on substrate 120 (on the surface opposite to substrate 110). Multiple antennas 130_1 to 130_N can be arranged in a matrix over an area equivalent to or larger than the display unit 111 having pixels 116. Antennas 130_1 to 130_N may be of the same shape, different shapes, or different sizes. Furthermore, since the antennas can be placed in an area overlapping with the large-area display unit 111, multiple antennas can be arranged side by side. In addition, since there is no need to place antennas within the integrated circuit 141, the integrated circuit 141 can be miniaturized. Furthermore, the antenna components connected to the integrated circuit 141 and the area required for installing those antenna components can be reduced.

[0060] As antenna 130, antennas of different shapes or sizes can be arranged, enabling the transmission and reception of wireless signals at different communication frequencies. Furthermore, since multiple antennas of the same shape and size can be arranged, beamforming technology using an array of antennas can be applied. Because beamforming technology provides antenna directivity, it is possible to compensate for radio wave propagation loss at higher communication frequencies.

[0061] When using millimeter-wave radio waves, for example, arranging antennas 130_1 to 130_N at intervals of a few millimeters, which is half a wavelength, is effective for beamforming. It is preferable to place a conductive layer that does not function as an antenna between antennas 130_1 to 130_N. By placing the conductive layer between adjacent antennas 130, the macroscopic transmittance of the antennas 130 and the layer on which the conductive layer is formed becomes uniform, thereby improving display quality. The conductive layer that does not function as an antenna may also be used as an electrode for a touch sensor. Since the frequency of the signal used in the touch sensor is different from the frequency of the signal used in wireless communication, the signals can be separated.

[0062] Figure 3B shows, in addition to the multiple antennas 130_1 to 130_N shown in Figure 3A, an integrated circuit 141 for transmitting and receiving wireless signals using the multiple antennas, and a baseband processor 12 that outputs from the integrated circuit 141.

[0063] The integrated circuit 141 has the function of performing modulation or demodulation processing on the data of the radio signals transmitted and received by antennas 130_1 to 130_N. Specifically, the integrated circuit 141 has the function of generating a transmission signal by modulating the transmission data received from the baseband processor 12 with a carrier wave and outputting the transmission signal via antennas 130_1 to 130_N. The integrated circuit 141 also has the function of receiving a received signal via antennas 130_1 to 130_N, demodulating the received signal with a carrier wave to generate received data, and transmitting the received data to the baseband processor 12. The integrated circuit 141 may also be equipped with duplexers connected to each of the antennas 130_1 to 130_N.

[0064] The baseband processor 12 has the function of performing baseband processing, including encoding (e.g., error correction encoding) or decoding, on data transmitted to and from external devices via antennas 130_1 to 130_N. Specifically, the baseband processor 12 has the function of receiving transmission data from the application processor, encoding the received transmission data, and transmitting it to the integrated circuit 141. The baseband processor 12 also has the function of receiving received data from the integrated circuit 141, decoding the received data, and transmitting it to the application processor.

[0065] A pair of substrates in a display device according to one aspect of the present invention may be flexible. By using flexible substrates in the display device, a part of the display area can be made curved. Alternatively, a foldable display device can be made.

[0066] Figure 4A shows an example in which a pair of substrates (substrate 110f, substrate 120f) are flexible. In the display device 101 shown in Figure 4A, the components other than the pair of substrates can be the same as those in Figure 1.

[0067] The display device 101 has a rectangular top surface shape and is configured to have convex curved portions 161 and 162 near the ends on the longer sides. As shown in Figure 4B, the antenna 130 located near the ends on the longer sides may have a region R that has curvature throughout. In this case, the antenna 130 located other than near the ends may have a flat region F (shown with hatching different from region R).

[0068] Alternatively, as shown in Figure 4C, the antenna 130 provided near the end of the longer side may have a curvatured region R and a flat region F. In Figure 4C, an example is shown where the areas of region R and region F are approximately equal in the antenna 130, but one area may be larger and the other smaller.

[0069] Figures 4B and 4C show an example where the antennas 130 on the curved surface 161 near the end of the long side are arranged in a single row (with the long axis of the rectangular display device as the row). However, multiple rows of antennas 130 may be provided on the curved surface. In this case, all of the multiple rows of antennas 130 can have an overall region R.

[0070] In the configuration shown in Figure 1, the antenna's orientation is limited to one direction, but in the configurations shown in Figures 4A to 4C, the antenna can be oriented in multiple directions. Therefore, radio waves can be transmitted radially, making signal propagation easier. It also becomes easier to receive radio waves from multiple directions.

[0071] Figure 5A illustrates a display device 102 that differs from Figure 4A, in which a pair of substrates (substrate 110f, substrate 120f) are flexible. The display device 102 shown in Figure 5A differs from the display device 101 shown in Figure 4A in that the display device can be folded in half. Figure 5A shows an example of the folding configuration.

[0072] The display device 102 has a rectangular top surface when opened flat, and can be folded in half so that the surfaces of the substrate 120f (the side opposite to the substrate 110f) face each other, with a region 165 near the center in the longitudinal direction as the boundary. In this configuration, as shown in Figure 5A, when bent, region 165 has a concave curved surface. Therefore, as shown in Figures 5B and 5C, the antenna 130 located in region 165 can have region R.

[0073] As shown in Figure 5B, the antenna 130 located in region 165 may have region R and region F. While Figure 5B shows an example where the areas of region R and region F are approximately equal in the antenna 130, one area may be larger than the other. Furthermore, as shown in Figure 5C, the antenna 130 located in region 165 may have region R but not region F.

[0074] Furthermore, while Figures 5B and 5C show examples where two rows of antennas 130 (with the minor axis direction of the rectangular display device as the row) are attached to the curved surface, the antennas 130 attached to the curved surface may be in a single row. In this case, one antenna may have regions R and F, or it may have region R but not region F.

[0075] Alternatively, the antenna 130 extending over the curved surface may be in multiple rows. In this case, all antennas 130 may have region R but not region F. In this configuration, one and / or the other antenna 130 provided near the end of the curved surface may have both region R and region F.

[0076] In the configurations shown in Figures 5A to 5C, the antenna can be oriented in multiple directions. There are multiple antennas mounted on two planar sections with different angles and multiple antennas mounted on one curved section. Beamforming technology allows for control over which region's antenna intensity is strengthened, etc., on a region-by-region basis. This allows for control of the antenna's directivity. Furthermore, by adjusting the bending angle, the receiving sensitivity can be increased.

[0077] Figure 6A illustrates a display device 103 that is different from that shown in Figure 5A, in which a pair of substrates (substrate 110f, substrate 120f) are flexible. The display device 102 shown in Figure 6A differs from the display device 102 shown in Figure 5A in that the display device can be folded into three sections. Figure 6A is a diagram illustrating an example of the folding configuration.

[0078] The display device 103 has a rectangular top surface when opened flat, and can be folded so that the surfaces of the substrate 120f (the side opposite to the substrate 110f) face each other, with the region 166 on the FPC 112 side from the center in the long axis direction as the boundary, and can be folded so that the back surfaces of the substrate 120f face each other, with the region 167 on the FPC 122 side from the center in the long axis direction as the boundary. In this configuration, as shown in Figure 6A, when bent, region 166 has a concave curved surface and region 167 has a convex curved surface. In the convex curved surface, as shown in Figures 6B and 6C, the antenna 130 can have a region R.

[0079] As shown in Figure 6B, the antenna 130 located in region 167 may have regions R and F. In Figure 6B, an example is shown where the areas of region R and region F are approximately equal in the antenna 130, but the area of ​​one region may be larger and the area of ​​the other smaller.

[0080] Furthermore, Figure 6B shows an example where two rows of antennas 130 (with the minor axis direction of the rectangular display device as the row) are attached to the curved surface, but the antennas 130 attached to the curved surface may be only one row. In this case, one antenna 130 may have regions R and F, or, as shown in Figure 6C, one antenna 130 may have region R but not region F.

[0081] Alternatively, the antenna 130 extending over the curved surface may be in multiple rows. In this case, all antennas 130 may have region R but not region F. In this configuration, one and / or the other antenna 130 provided near the end of the curved surface may have both region R and region F.

[0082] For details on the antenna 130 in region 166 having a concave curved surface, please refer to the explanation in Figures 5B and 5C.

[0083] In the configuration shown in Figures 6A to 6C, the antenna can be oriented in multiple directions. There are multiple antennas mounted on three planar sections with different angles and multiple antennas mounted on two curved sections. Beamforming technology allows for control over which region's antenna intensity is strengthened, etc., on a region-by-region basis. This allows for control of the antenna's directivity. Furthermore, by adjusting the bending angle, the receiving sensitivity can be increased.

[0084] In addition, in all configuration examples described in this embodiment, substrates 110 and 120 can be replaced with substrates 110f and 120f.

[0085] Figure 7A illustrates an example of the layout (top view) of conductive layers 131A to 131D applicable to the antenna 130 (antennas 130_1 to 130_N) described in Figure 3A, and conductive layer 132 provided between the antennas 130. The conductive layers 131A to 131D are provided with an aperture 133A for transmitting light emitted by pixels. The conductive layer 132 is provided with an aperture 133B for transmitting light emitted by pixels.

[0086] The conductive layers 131A to 131D, which function as antennas, are provided at a distance from the conductive layer 132, which does not function as an antenna. The apertures 133A and 133B are provided in areas that overlap with the pixels of the display unit. With this configuration, the light emitted by the display element is emitted to the outside through the apertures 133A and 133B, so that non-transparent materials can be used for the conductive layers 131A to 131D. In other words, a material such as a metal or alloy with lower resistance than a translucent conductive material can be applied as the material for the conductive layer that functions as an antenna.

[0087] Figure 7B is a schematic diagram showing the layout diagram described in Figure 7A, represented by block diagrams for each region. In Figure 7B, as in Figure 7A, conductive layers 131A to 131D and conductive layer 132 are illustrated.

[0088] As shown in Figures 7A and 7B, by regularly arranging conductive layers that function as antennas with conductive layers that do not function as antennas in between, it is possible to arrange antennas at intervals of a few millimeters, which is half a wavelength of the communication frequency. Therefore, beamforming technology using antennas arranged in an array can be applied. Because beamforming technology can give the antenna directivity, it is possible to compensate for radio wave propagation loss when the communication frequency is high.

[0089] Furthermore, as shown in Figures 7A and 7B, by regularly arranging conductive layers that function as antennas with conductive layers that do not function as antennas in between, the macroscopic transmittance of the layers in which these conductive layers are formed becomes uniform, thereby improving the display quality.

[0090] In Figures 7A and 7B, the conductive layers 131A to 131D are shown in a rectangular shape in a top view and arranged regularly, but the configuration is not limited to this. For example, the conductive layers 131A to 131D may be circular, triangular, pentagonal, hexagonal, or octagonal in a top view. Also, the shapes of the openings 133A and 133B may be circular, triangular, pentagonal, hexagonal, or octagonal to match the shape of the outer frame of the conductive layers 131A to 131D.

[0091] Figures 8A to 8F illustrate examples of the configuration of the conductive layer 131 applicable to the conductive layers 131A to 131D that function as antennas, as shown in Figure 7A.

[0092] In Figure 7A, the conductive layer functioning as an antenna is shown as having a rectangular opening in a rectangular conductive layer when viewed from above, but it is not limited to this configuration. For example, as shown in Figure 8A, the conductive layer 131 can have an opening 133 and a notch 134.

[0093] Alternatively, as shown in Figure 8B, the conductive layer 131 may have openings 133A and 133B of different sizes.

[0094] Alternatively, as shown in Figure 8C, the conductive layer 131 may have a notch 134 in addition to openings 133A and 133B of different sizes.

[0095] Alternatively, as shown in Figure 8D, the conductive layer 131 may have a projection 135 in addition to the opening 133.

[0096] Alternatively, as shown in Figure 8E, the conductive layer 131 may have multiple openings 133A and 133B of different sizes.

[0097] Alternatively, as shown in Figure 8F, the conductive layer 131 may have rounded corners (openings 133C).

[0098] Figure 9A is a schematic diagram, similar to Figure 7B, showing a display device having multiple types of conductive layers 131 and conductive layers 132 of different sizes that function as an antenna. Conductive layers 131P, 131Q, and 131R are shown as conductive layers 131 of different sizes that function as an antenna 130. In this way, by arranging multiple types of antennas of different sizes, transmission and reception can be performed at multiple different communication frequencies.

[0099] As shown in Figure 9A, by regularly arranging conductive layers 131 (conductive layers 131P, 131Q, 131R) that function as antennas 130 with conductive layers 132 that do not function as antennas 130 in between, beamforming technology using antennas 130 arranged in an array can be applied. In addition, the conductive layers 132 that do not function as antennas 130 may be used as electrodes for a touch sensor.

[0100] Furthermore, as shown in Figure 9B, the conductive layers 131S may be arranged at equal intervals. The conductive layers 131S can function as an antenna or as electrodes for a touch sensor. The conductive layers 132 provided between the conductive layers 131S may function as electrodes for a touch sensor or may be conductive layers without any specific function.

[0101] For example, as shown in Figure 10A, the conductive layer 131S near the area touched by a finger can function as the electrode 139 of a touch sensor, while the conductive layer 131S in other areas can function as the antenna 130. Alternatively, as shown in Figure 10B, for example, when a keyboard 170 is displayed on the display unit 111, the conductive layer 131S in the area overlapping with the keyboard 170 display and its vicinity can function as the electrode 139 of a touch sensor, while the conductive layer 131S in other areas can function as the antenna 130.

[0102] In other words, the conductive layer 131S functions as a touch sensor for a certain period and as an antenna for another period. Alternatively, one area functions as a touch sensor and another area functions as an antenna metal. The antenna function and the touch sensor function can be switched on and off spatially or temporally.

[0103] Furthermore, as shown in Figure 11A, in a configuration where the conductive layer 131, which functions as an antenna 130, is arranged to overlap with the display unit 111 (including the configuration in Figure 9B), and there is an overlapping area between the display unit 111 and the fingerprint sensor 210, it is preferable to omit the conductive layer 131 in that area. The fingerprint sensor 210 can be an optical sensor or an ultrasonic sensor. If there is a conductive layer 131 between the finger (fingerprint) and the fingerprint sensor 210, clear fingerprint information may not be obtained due to the influence of light or sound wave reflection.

[0104] Figure 11B is a cross-sectional view of the region shown A1-A2 in Figure 11A. Between substrate 110 and substrate 120, conductive layers 131 and 132, as well as a pixel array 116a constituting the display unit 111, are provided. The fingerprint sensor 210 can be provided, for example, in contact with the underside of substrate 110 (the side opposite to substrate 120).

[0105] Alternatively, as shown in Figure 11C, it can be provided on the underside of the substrate 110 in an area that does not come into contact with the substrate 110. In this case, there may be an adhesive layer or space between the substrate 110 and the fingerprint sensor 210.

[0106] Furthermore, while Figures 11A to 11C show an example where the fingerprint sensor 210 is externally attached using a sensor module or sensor IC, as shown in Figure 11D, the fingerprint sensor 210 can also be provided within the pixel array 116a. In this case, a light-receiving device, described later, can be used as the fingerprint sensor. For example, when an organic EL element is used as the display device, the light-receiving device can be manufactured using a process common to that of the organic EL element.

[0107] Figures 12A to 12D are cross-sectional views illustrating layers on which conductive layers 131 and 132 can be provided, which can be applied as conductive layers 131P, 131Q, 131R, and 131S. Figures 12A to 12D are diagrams showing a simplified arrangement of pixels 116, conductive layer 131, and conductive layer 132 between substrates 110 and 120, with other elements omitted.

[0108] The pixel 116 has a transistor 117 and a display element 118 that overlaps with and is electrically connected to the transistor 117. In all configurations shown in Figures 12A to 12D, it is preferable that the conductive layer 131 and the conductive layer 132 are provided in a region that does not overlap with the display element 118.

[0109] Figure 12A shows a configuration in which a layer 151 is provided between the display element 118 and the substrate 120. The layer 151 is provided with a conductive layer 131 and a conductive layer 132. Figure 12A can be called an in-cell type in which an antenna (conductive layer 131) and a touch sensor (conductive layer 132) are formed between the substrates. In addition to the conductive layer, the layer 151 includes multiple insulating layers formed of either or both inorganic and organic materials.

[0110] Figure 12B shows a configuration in which a layer 155 is provided on a substrate 120. The layer 155 is provided with a conductive layer 131 and a conductive layer 132. The configuration in which the layer 155 is formed on the substrate 120 can be called an on-cell type. The configuration in which the substrate 120 and the layer 155 are bonded together can be called an out-cell type. In the out-cell type, an adhesive layer is provided between the substrate 120 and the layer 155. In addition to the conductive layer, the layer 155 includes an insulator made of inorganic or organic material, or both.

[0111] As shown in Figure 12C, the antenna (conductive layer 131) may be provided on layer 151 and the touch sensor (conductive layer 132) on layer 155. Alternatively, as shown in Figure 12D, the antenna (conductive layer 131) may be provided on layer 155 and the touch sensor (conductive layer 132) on layer 151.

[0112] The in-cell configuration shown in Figure 12A will be explained in more detail. Figure 13A is a perspective view showing a configuration in which conductive layers 131 and 132 are formed at the same height in layer 151. Figure 13A also shows cross-sectional and enlarged views of some regions. Figure 13B is a cross-sectional view including regions A, B, and C shown in Figure 13A, and their vicinity. Note that some elements are omitted from Figures 13A and 13B for clarity.

[0113] Here, the display element 118 refers to an organic EL element. An insulating layer 119 is provided between the display elements 118. The walls of the insulating layer 119 have curvature, and the display elements 118 are formed so that they overlap with these walls. By providing the insulating layer 119 with walls that have curvature, it is possible to prevent the common electrode, which is electrically connected to the organic layer of the display element 118, from being interrupted.

[0114] Here, as shown in the top view of Figure 14A, the conductive layer 131 and the conductive layer 132 are arranged to overlap with the insulating layer 119 but not with the display element 118. This configuration allows the light emitted by the display element 118 to be efficiently emitted to the outside.

[0115] Furthermore, as shown in Figure 14B, the wall surface of the insulating layer 119 may not have curvature. In this configuration, it is preferable to reduce the difference between the height of the organic layer of the display element 118 and the height of the insulating layer 119. In other words, the insulating layer 119 fills the space between the organic layers of adjacent display elements 118.

[0116] This configuration prevents the common electrode, which is electrically connected to the organic layer of the display element 118, from being broken. Furthermore, in the configuration shown in Figure 14B, the width between the display elements 118 can be reduced compared to the configuration in Figure 13A, allowing for the formation of a display element with a high aperture ratio and high resolution. In addition, when an organic EL element is used for the display element 118, the high aperture ratio allows for a lower current density, thereby improving the reliability of the element.

[0117] As shown in Figures 13A and 13B, in layer 151, conductive layer 131 and conductive layer 132 can be provided at the same height. Here, "same height" means that the height of the surface to be formed is the same. Alternatively, conductive layer 131 and conductive layer 132 can be provided on the same layer.

[0118] For example, conductive layers 131 and 132 can be formed by forming a conductive film on an insulating layer formed on a pixel and then processing the conductive film. In this case, since conductive layers 131 and 132 are formed using the same conductive film and the same process, the manufacturing process can be simplified.

[0119] Alternatively, a first conductive film may be formed on an insulating layer formed on a pixel, and one of the conductive layers 131 and 132 may be formed by processing the first conductive film. A second conductive film may then be formed on the insulating layer, and the other of the conductive layers 131 and 132 may be formed by processing the second conductive film. In this case, the constituent materials, thickness, etc., of the conductive layer 131 and the conductive layer 132 can be different, allowing for an appropriate configuration depending on the application.

[0120] However, there may be variations in the thickness of the insulating layer formed on the pixels. For example, within the display surface, the variation in the thickness of the insulating layer can be 30% or less, preferably 20% or less, and more preferably 10% or less. Therefore, the heights of the surfaces on which the conductive layer 131 and conductive layer 132 are formed can be considered the same as long as they fall within these variation ranges.

[0121] Figure 15A is a modified example of the configuration shown in Figure 13A, and is a perspective view showing a configuration in which conductive layers 131 and 132 are formed at different heights in layer 151. Figure 15B is a cross-sectional view including regions A, B, and C shown in Figure 15A, and their vicinity. Note that some elements are omitted from Figures 15A and 15B for clarity.

[0122] As shown in Figures 15A and 15B, in layer 151, conductive layers 131 and 132 can be provided at different heights. Here, different heights mean that the heights of the surfaces to be formed are different. Alternatively, conductive layers 131 and 132 can be provided on different layers.

[0123] For example, a first conductive film may be formed on a first insulating layer formed on a pixel, and one of the conductive layers 131 and 132 may be formed by processing the first conductive film. Next, a second insulating layer may be formed on one of the first insulating layer, conductive layer 131, and conductive layer 132, a second conductive film may be formed on the second insulating layer, and the other of the conductive layers 131 and 132 may be formed by processing the second conductive film. A planarization process may also be performed after the formation of the second insulating layer.

[0124] The constituent materials and film thicknesses of the first and second insulating layers may be the same or different. Therefore, the interface between the layers may not be clearly defined. In addition, since 5G uses relatively high signal frequencies, radio waves are easily shielded by obstacles. Therefore, it is preferable to place the conductive layer 131 used as an antenna at a higher position (outside) than the conductive layer 132.

[0125] Figure 16A is a modified example of the configuration shown in Figure 15A, and is a perspective view showing a configuration in which some conductive layers 132 are formed at different heights in layer 151. Figure 16B is a cross-sectional view including regions A, B, and C shown in Figure 16A, and their vicinity. Note that some elements are omitted from Figures 16A and 16B for clarity.

[0126] As shown in Figures 16A and 16B, in layer 151, a portion of the conductive layer 132 can be provided at different heights. Here, different heights mean that the heights of the surfaces to be formed are different. Alternatively, a portion of the conductive layer 132 can be provided on a different layer.

[0127] For example, a first conductive film may be formed on a first insulating layer formed on a pixel, and a conductive layer 132 provided in a first region may be formed by processing the first conductive film. Next, a second insulating layer may be formed on the first insulating layer and the conductive layer 132 provided in the first region, a second conductive film may be formed on the second insulating layer, and a conductive layer 131 and a conductive layer 132 provided in a second region may be formed by processing the second conductive film. A planarization process may also be performed after the formation of the second insulating layer.

[0128] This configuration allows the conductive layer 132 provided in the first region and the conductive layer 131 and the conductive layer 132 provided in the second region to be formed with different constituent materials and film thicknesses, enabling an appropriate configuration for each application.

[0129] Figure 17A is a modified configuration of the structure shown in Figure 15A, and is a perspective view showing a configuration in which the conductive layer 132 and conductive layer 131 provided in the first region and the conductive layer 132 provided in the second region are each formed at different heights in layer 151. Figure 17B is a cross-sectional view including regions A, B, and C shown in Figure 17A and their vicinity. Note that some elements are omitted from the illustration in Figures 17A and 17B for clarity.

[0130] As shown in Figures 17A and 17B, in layer 151, the conductive layer 132 provided in the first region, the conductive layer 131, and the conductive layer 132 provided in the second region can be provided at different heights. Here, different heights mean that the heights of the surfaces to be formed are different. Alternatively, the conductive layer 132 provided in the first region, the conductive layer 131, and the conductive layer 132 provided in the second region can each be provided on different layers.

[0131] For example, a first conductive film is formed on a first insulating layer formed on a pixel, and a conductive layer 132 is formed in a first region by processing the first conductive film. Next, a second insulating layer is formed on the first insulating layer and the conductive layer 132 in the first region, a second conductive film is formed on the second insulating layer, and a conductive layer 132 is formed in a second region by processing the second conductive film. Next, a third insulating layer is formed on the second insulating layer and the conductive layer 132 in the second region, a third conductive film is formed on the third insulating layer, and a conductive layer 131 is formed by processing the third conductive film. Note that a planarization process may be performed after the formation of the second insulating layer and after the formation of the third insulating layer.

[0132] This configuration allows the conductive layer 132 provided in the first region, the conductive layer 132 provided in the second region, and the conductive layer 131 to be formed with different constituent materials and film thicknesses, enabling an appropriate configuration for each application.

[0133] Figure 18A is a modified example of the configuration shown in Figure 15A, and is a perspective view showing a configuration in which the conductive layer 131 and the conductive layer 132 overlap in layer 151. Figure 18B is a cross-sectional view including regions A, B, C, D and their vicinity shown in Figure 18A. Note that some elements are omitted from the illustration in Figures 18A and 18B for clarity.

[0134] As shown in Figures 18A and 18B, in layer 151, conductive layer 131 and conductive layer 132 can be provided at different heights. Furthermore, one region of conductive layer 131 and one region of conductive layer 132 are formed to overlap. Here, "different heights" means that the heights of the surfaces to be formed are different. Alternatively, conductive layer 131 and conductive layer 132 can be provided on different layers.

[0135] For example, a conductive layer 132 is formed by forming a first conductive film on a first insulating layer formed on a pixel and processing the first conductive film. Next, a second insulating layer is formed on the first insulating layer and the conductive layer 132, a second conductive film is formed on the second insulating layer, and a conductive layer 131 is formed by processing the second conductive film. At this time, the conductive layer 131 is formed to have a region that overlaps with the conductive layer 132. Note that a planarization process may be performed after the formation of the second insulating layer.

[0136] This configuration allows for an increase in the installation area of ​​the conductive layer 132, thereby enabling the formation of a touch sensor with higher resolution. However, since the sensitivity of the touch sensor may decrease in areas where the conductive layer 131 and the conductive layer 132 overlap, it is preferable that the area where the two do not overlap accounts for 50% or more, and more preferably 80% or more.

[0137] Figures 19A to 19E and 20A to 20H are schematic diagrams showing the positional relationship between pixels (sub-pixels) and the conductive layer 131 as viewed from the display surface side.

[0138] Figure 19A shows an example where pixel 116 is composed of three subpixels: subpixel 33R, subpixel 33G, and subpixel 33B. For example, subpixel 33R may display red, subpixel 33G may display green, and subpixel 33B may display blue. Note that the number of subpixels and the types of colors of subpixels in pixel 116 are not limited to these examples.

[0139] Multiple sub-pixels contained within pixel 116 each include a display element. Typical examples of display elements include light-emitting elements such as organic EL elements, liquid crystal elements, display elements that perform display by electrophoresis or electronic powder fluid (registered trademark) methods (also called electronic ink), shutter-type MEMS display elements, and optical interference-type MEMS display elements. In addition to the display element, the sub-pixel may also have transistors, capacitive elements, and wiring that electrically connects them. Furthermore, a light-receiving element (for example, a light-receiving element using an organic photodiode) may be provided in one of the sub-pixels, and by receiving light emitted from other sub-pixels with this light-receiving element, the display device may be provided with additional functions such as imaging or sensing.

[0140] Furthermore, the display device according to one aspect of the present invention can be a transmissive liquid crystal display, a semi-transmissive liquid crystal display, a reflective liquid crystal display, a direct-view liquid crystal display, etc. When realizing a semi-transmissive or reflective liquid crystal display, some or all of the pixel electrodes may function as reflective electrodes. For example, some or all of the pixel electrodes may be made of aluminum, silver, etc. In this case, it is also possible to provide a memory circuit such as SRAM below the reflective electrodes. This further reduces power consumption. Additionally, a suitable configuration for the display element can be selected from various pixel circuits.

[0141] In the configuration shown in Figure 19A, one aperture 133 of the conductive layer 131 and three subpixels, subpixels 33R, 33G, and 33B, are arranged to overlap each other. In this way, it is preferable that the aperture 133 of the conductive layer 131 is arranged to overlap with one pixel 116. In other words, it is preferable that the spacing between the arranged pixels 116 matches the spacing of the grid of the conductive layer 131. With this configuration, the structure of the surrounding area of ​​each pixel 116 (for example, the film structure of the pixel and its surroundings, the thickness of the constituent film, or the uneven shape of the surface) can be made the same, thereby suppressing the occurrence of display unevenness.

[0142] For example, as shown in Figure 19C, a configuration in which two or more pixels 116 and one aperture 133 overlap each other is also possible.

[0143] Figure 19B shows an example where one aperture 133 and one subpixel are arranged so that they overlap each other. By configuring the conductive layer 131 to be placed between the two subpixels contained in one pixel 116 in a plan view, the wiring resistance of the conductive layer 131 can be reduced. As a result, the receiving sensitivity of the antenna can be improved.

[0144] Figure 19D shows an example where pixel 116 has additional sub-pixels 33Y compared to the configuration shown in Figure 8A. For example, sub-pixels 33Y can be pixels capable of displaying yellow. Alternatively, pixels capable of displaying white can be used instead of sub-pixels 33Y. By having more than three sub-pixels in pixel 116, power consumption can be reduced. Furthermore, a light-receiving element can be provided at the location of the sub-pixels 33Y.

[0145] Furthermore, Figure 19E shows an example in which one aperture 133 and one subpixel are arranged so that they overlap each other. That is, it shows an example in which the conductive layer 131 is placed between two adjacent subpixels in a plan view. When a photodetector is provided at the position of the subpixel 33Y, this configuration can suppress stray light incident on the photodetector. Alternatively, two of the four subpixels may be arranged so that they overlap with one aperture 133.

[0146] Figures 19A to 19E show examples where subpixels are arranged in a stripe pattern. However, as shown in Figures 20A to 20C, for example, subpixels of two colors may be arranged alternately in one direction. Figure 20A shows a configuration in which a pixel 116 with four subpixels and one aperture 133 overlap each other. Figure 20B shows a configuration in which two adjacent subpixels and one aperture 133 overlap each other. Figure 20C shows a configuration in which one subpixel and one aperture 133 overlap each other.

[0147] Furthermore, the size of the subpixels of pixel 116 (for example, the area of ​​the region that contributes to the display) may differ for each subpixel. For example, the subpixel that displays blue, which has relatively low visual sensitivity, may be made larger, while the subpixel that displays green or red, which has relatively high visual sensitivity, may be made smaller.

[0148] Figures 20D and 20E show an example where subpixel 33B is larger than the other subpixels, among subpixels 33R, 33G, and 33B. Here, an example is shown where subpixels 33R and 33G are arranged alternately, but as shown in Figure 19A, etc., it is also possible to arrange the three subpixels in a stripe pattern and make each of them different in size.

[0149] Figure 20D shows a configuration in which a pixel 116 with three subpixels and one aperture 133 overlap each other. Figure 20E shows a configuration in which one aperture 133 and one subpixel 33B overlap each other, and another aperture 133 and two subpixels (subpixels 33R and 33G) overlap each other.

[0150] Furthermore, the pixel configuration can also be as shown in Figures 20F to 20H. In this configuration, the subpixels 33B are arranged in a stripe pattern, and on both sides of the row of subpixels 33B there are rows in which subpixels 33R and subpixels 33G are arranged alternately. Also, one subpixel 33R and one subpixel 33G are arranged on both sides of a single subpixel 33B. Note that while the configurations shown in Figures 20F to 20H illustrate a stripe-shaped configuration of subpixels, the invention is not limited to this. For example, in one embodiment of the present invention, the configuration can also be applied to the shape of pentile-type subpixels.

[0151] Figure 20F shows a configuration in which six subpixels (two of each color) and one aperture 133 overlap each other. Figure 20G shows a configuration in which three subpixels (one of each color) and one aperture 133 overlap each other. Figure 20H shows a configuration in which one subpixel and one aperture 133 overlap each other. Note that the configurations are not limited to those shown here; a configuration in which two or more adjacent subpixels and one aperture 133 overlap each other is also possible.

[0152] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments.

[0153] (Embodiment 2) In this embodiment, an example of the configuration of an electronic device equipped with the display device 100 shown in the above embodiment will be described with reference to Figures 21 and 22. In this embodiment, a smartphone is described as an example of an electronic device, but other electronic devices such as portable game terminals, tablet PCs (Personal Computers), and notebook PCs may also be used. Furthermore, the electronic device according to this embodiment can be applied to other electronic devices that can perform wireless communication.

[0154] The block diagram of the electronic device 10 shown in Figure 21A includes an antenna 130, an application processor 11, a baseband processor 12, an integrated circuit 141 (IC), a memory 14, a battery 15, a power management integrated circuit (PMIC) 16, a display unit 17, a camera unit 18, an operation input unit 19, an audio IC 20, a microphone 21, and a speaker 22. The integrated circuit 141 is also called an RF (Radio Frequency) IC or a wireless chip.

[0155] The antenna 130 is provided according to the frequency band corresponding to the 5G communication standard. As described in Embodiment 1, since it can be placed superimposed on the display unit of the display device, multiple antennas corresponding to multiple frequency bands can be placed.

[0156] The application processor 11 has the function of reading programs stored in memory 14 and performing processing to realize various functions of the electronic device 10. For example, the application processor 11 has the function of executing an OS (Operating System) program from memory 14 and also executing application programs that use this OS program as an operating base.

[0157] The baseband processor 12 has the function of performing baseband processing, including encoding (e.g., error correction encoding) or decoding, on data transmitted and received by the electronic device 10. Specifically, the baseband processor 12 has the function of receiving transmitted data from the application processor 11, encoding the received transmitted data, and transmitting it to the integrated circuit 141. The baseband processor 12 also has the function of receiving received data from the integrated circuit 141, decoding the received data, and transmitting it to the application processor 11.

[0158] The integrated circuit 141 has the function of performing modulation or demodulation processing on the data transmitted and received by the electronic device 10. Specifically, the integrated circuit 141 has the function of modulating the transmission data received from the baseband processor 12 with a carrier wave to generate a transmission signal and outputting the transmission signal via the antenna 130. The integrated circuit 141 also has the function of receiving a reception signal via the antenna 130, demodulating the reception signal with a carrier wave to generate received data, and transmitting the received data to the baseband processor 12.

[0159] Memory 14 has the function of storing programs and data used by the application processor 11. Memory 14 includes non-volatile memory that retains stored data even when the power is cut off, and volatile memory that clears stored data when the power is cut off.

[0160] The battery 15 is used when the electronic device 10 operates without an external power source. The electronic device 10 can also use the battery 15 as a power source when an external power source is connected. Furthermore, it is preferable to use a rechargeable secondary battery as the battery 15.

[0161] The power management IC 16 has the function of generating internal power from the battery 15 or an external power source. This internal power is supplied to each block of the electronic device 10. At this time, the power management IC 16 has the function of controlling the voltage of the internal power for each block that receives the internal power supply. The power management IC 16 controls the voltage of the internal power supply based on instructions from the application processor 11. Furthermore, the power management IC 16 can also control the supply and cutoff of internal power for each block. In addition, the power management IC 16 also has the function of controlling the charging of the battery 15 when an external power supply is available.

[0162] The display unit 17 is a liquid crystal display device or a light-emitting display device, and has the function of displaying various images according to the processing in the application processor 11. The images displayed in the display unit 17 include user interface images in which the user gives operation instructions to the electronic device 10, camera images, videos, etc.

[0163] The camera unit 18 has the function of acquiring images according to instructions from the application processor 11. The operation input unit 19 has the function of a user interface for the user to operate and give operation instructions to the electronic device 10. The audio IC 20 has the function of decoding audio data transmitted from the application processor 11 and driving the speaker 22. In addition, the audio IC 20 has the function of encoding audio information obtained from the microphone 21 to generate audio data and outputting said audio data to the application processor 11.

[0164] Figure 21B is a perspective view of the electronic device 10 having the configurations shown in Figure 21A. Figure 21B also shows some of the configurations shown in Figure 21A (antenna 130, display unit 17, camera unit 18, operation input unit 19, microphone 21, and speaker 22).

[0165] An antenna 130 is superimposed on the display unit 17 housed in the casing 50. By arranging a conductive layer that functions as an antenna on the display unit, the communication range can be extended and the integrated circuit can be miniaturized.

[0166] Figure 22 is a block diagram illustrating an example configuration of the integrated circuit 141. The integrated circuit 141 shown in Figure 22 includes a low-noise amplifier 231, a mixer 232, a low-pass filter 233, a variable-gain amplifier 234, an analog-to-digital conversion circuit 235, an interface section 236, a digital-to-analog conversion circuit 241, a variable-gain amplifier 242, a low-pass filter 243, a mixer 244, a power amplifier 245, and an oscillator circuit 240. Figure 22 also shows an antenna 130, a duplexer DUP, and a baseband processor 12. Note that the low-noise amplifier 231, mixer 232, low-pass filter 233, variable-gain amplifier 234, and analog-to-digital conversion circuit 235 may be referred to as the receiving circuit block, while the digital-to-analog conversion circuit 241, variable-gain amplifier 242, low-pass filter 243, mixer 244, and power amplifier 245 may be referred to as the transmitting circuit block.

[0167] The baseband processor 12 and the integrated circuit 141 are each implemented by separate semiconductor chips.

[0168] In Figure 22, the circuit shown in the area enclosed by the dashed line (one of the following: duplexer DUP, low-noise amplifier 231, mixer 232, mixer 244, and power amplifier 245) can be fabricated using transistors superimposed on a conductive layer provided on the substrate. Therefore, some of the circuits of the integrated circuit 141, which is a semiconductor chip, can be placed on the display side, thus enabling miniaturization of the integrated circuit.

[0169] The low-noise amplifier 231 amplifies the signal received by the antenna 130 with low noise. The mixer 232 demodulates and down-converts (frequency-converts) the signal from the oscillator circuit 240. The low-pass filter 233 removes unwanted high-frequency components from the signal from the mixer 232. The variable-gain amplifier 234 amplifies the output signal from the low-pass filter 233 with a gain that takes into account the input range of the analog-to-digital conversion circuit 235. The analog-to-digital conversion circuit 235 converts the analog signal from the variable-gain amplifier 234 into a digital signal. The digital signal is output to the baseband processor 12 via the interface unit 236 and the differential interface circuit.

[0170] The digital-to-analog conversion circuit 241 converts the digital signal received by the interface unit 236 into an analog signal. The variable gain amplifier 242 amplifies the output signal of the digital-to-analog conversion circuit 241. The low-pass filter 243 removes unwanted high-frequency components from the signal from the variable gain amplifier 242. The mixer 244 modulates and upconverts (frequency converts) the analog signal using the signal from the oscillator circuit 240. The power amplifier 245 amplifies the output signal from the mixer 244 with a predetermined gain and outputs it.

[0171] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments.

[0172] (Embodiment 3) This embodiment describes a light-emitting device that can be used as a display device according to one aspect of the present invention, and an example of the configuration of the display device.

[0173] One aspect of the present invention is a display device having a light-emitting device. The display device may also be configured to include a light-receiving device. For example, a full-color display device can be realized by having three types of light-emitting devices that emit red (R), green (G), or blue (B) light, respectively.

[0174] One aspect of the present invention involves processing EL layers into fine patterns using photolithography without using shadow masks such as metal masks, and between EL layers and the active layer (organic layer of the light-receiving device). This makes it possible to realize a display device with high resolution and a large aperture ratio, which has been difficult to achieve until now. Furthermore, because the EL layers can be differentiated, it is possible to realize a display device with extremely vivid colors, high contrast, and high display quality.

[0175] While it is difficult to reduce the spacing between different colored EL layers, or between the EL layer and the active layer, to less than 10 μm using a metal mask formation method, the above method allows for narrowing the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less. For example, by using an exposure apparatus for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less. This significantly reduces the area of ​​non-emitting regions that may exist between two light-emitting devices or between a light-emitting device and a photodetector, making it possible to approach a 100% aperture ratio. For example, aperture ratios of 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, can be achieved, and even less than 100%.

[0176] Furthermore, the patterns of the EL layer and the active layer themselves can be made significantly smaller compared to when a metal mask is used. Also, for example, when a metal mask is used to create different EL layers, variations in thickness occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as an luminescent region relative to the total area of ​​the pattern. On the other hand, in the above manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as an luminescent region. Therefore, the above manufacturing method can achieve both high resolution and a high aperture ratio.

[0177] Organic films formed using FMM (Fine Metal Mask) often have an extremely small taper angle (for example, greater than 0 degrees and less than 30 degrees), with the thickness decreasing towards the edges. Therefore, it is difficult to clearly identify the sides of an organic film formed using FMM, as the sides and top surfaces are continuously connected. On the other hand, one embodiment of the present invention has an EL layer processed without using FMM, and thus has clearly defined sides. In particular, one embodiment of the present invention preferably has a portion of the EL layer with a taper angle of 30 degrees or more and less than 90 degrees, preferably 60 degrees or more and less than 90 degrees.

[0178] In this specification, an object is described as having a tapered end if the angle between the side surface (front) and the bottom surface (surface to be formed) in the end region is greater than 0 degrees and less than 90 degrees, and the cross-sectional shape has a continuous increase in thickness from the end. The taper angle is the angle between the bottom surface (surface to be formed) and the side surface (front) at the end of the object.

[0179] The following provides more specific examples.

[0180] Figure 23A shows a schematic top view of the display device 600. The display device 600 has multiple red light-emitting devices 90R, multiple green light-emitting devices 90G, and multiple blue light-emitting devices 90B. Figure 23B also shows a schematic top view of the display device 101. The display device 601 has multiple red light-emitting devices 90R, multiple green light-emitting devices 90G, multiple blue light-emitting devices 90B, and multiple light-receiving devices 90S. In Figures 23A and 23B, the labels R, G, B, and S are added within the area of ​​each light-emitting device or light-receiving device to simplify the distinction between them.

[0181] The light-emitting devices 90R, 90G, 90B, and 90S are each arranged in a matrix. However, the arrangement method of the light-emitting devices is not limited to this, and other arrangement methods such as stripe arrangement, S-stripe arrangement, delta arrangement, Bayer arrangement, and zigzag arrangement may be applied, as well as pentile arrangement and diamond arrangement.

[0182] Figures 23A and 23B also show a connecting electrode 311C that is electrically connected to the common electrode 313. The connecting electrode 311C is supplied with a potential (e.g., anode potential or cathode potential) to the common electrode 313. The connecting electrode 311C is located outside the display area where the light-emitting devices 90R and the like are arranged. The common electrode 313 is also shown with a dashed line in Figures 23A and 23B.

[0183] The connecting electrode 311C can be provided along the outer perimeter of the display area. For example, it may be provided along one side of the outer perimeter of the display area, or it may be provided across two or more sides of the outer perimeter of the display area. That is, if the top surface shape of the display area is rectangular, the top surface shape of the connecting electrode 311C can be a strip, L-shape, U-shape (angle bracket shape), or square, etc.

[0184] In the following description, we will primarily focus on the display device 601, which has a light-emitting device and a light-receiving device, but the description of the light-emitting device is the same as that of the display device 600.

[0185] Figure 23C is a schematic cross-sectional view corresponding to the dashed-dotted lines A1-A2 and C1-C2 in Figure 23B. Figure 23C shows schematic cross-sectional views of the light-emitting device 90B, light-emitting device 90R, light-receiving device 90S, and connecting electrode 311C provided on the insulating layer 301.

[0186] Note that the light-emitting device 90G, which is not shown in the cross-sectional schematic diagram, can have the same configuration as light-emitting device 90B or light-emitting device 90R, and the descriptions of these devices can be applied hereafter.

[0187] The light-emitting device 90B has a pixel electrode 311, an organic layer 312B, an organic layer 314, and a common electrode 313. The light-emitting device 90R has a pixel electrode 311, an organic layer 312R, an organic layer 314, and a common electrode 313. The light-receiving device 90S has a pixel electrode 311, an organic layer 315, an organic layer 314, and a common electrode 313. The organic layer 314 and the common electrode 313 are provided in common to the light-emitting devices 90B, 90R, and 90S. The organic layer 314 can also be called a common layer. The pixel electrodes 311 are spaced apart from each other between each light-emitting device and between a light-emitting device and a light-receiving device.

[0188] Organic layer 312R has a luminescent organic compound that emits light with intensity in at least the red wavelength range. Organic layer 312B has a luminescent organic compound that emits light with intensity in at least the blue wavelength range. Organic layer 315 has a photoelectric conversion material that is sensitive to visible light or infrared light wavelengths. Organic layer 312R and organic layer 312B can also be called EL layers.

[0189] Organic layer 312R, organic layer 312B, and organic layer 315 may each have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. Organic layer 314 may have a configuration without an emissive layer. For example, organic layer 314 may have one or more of the following: an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0190] In this case, it is preferable that the uppermost layer in the laminated structure of organic layer 312R, organic layer 312B, and organic layer 315, i.e., the layer in contact with organic layer 314, is a layer other than the light-emitting layer. For example, it is preferable to cover the light-emitting layer with an electron injection layer, electron transport layer, hole injection layer, hole transport layer, or other layer, and to have this layer in contact with organic layer 314. In this way, the reliability of the light-emitting device can be improved by protecting the upper surface of the light-emitting layer with another layer when manufacturing each light-emitting device.

[0191] Each pixel electrode 311 is provided for each element. The common electrode 313 and the organic layer 314 are provided as a continuous layer common to each light-emitting device. A conductive film that is transparent to visible light is used on either each pixel electrode or the common electrode 313, and a conductive film that is reflective is used on the other. By making each pixel electrode transparent and the common electrode 313 reflective, a bottom-emission type display device can be made. Conversely, by making each pixel electrode reflective and the common electrode 313 transparent, a top-emission type display device can be made. Furthermore, by making both each pixel electrode and the common electrode 313 transparent, a dual-emission type display device can be made.

[0192] An insulating layer 119 is provided covering the end of the pixel electrode 311. The end of the insulating layer 119 is preferably tapered. In this specification, an end of an object is said to be tapered, meaning that in the region of that end, the angle between the surface and the surface to be formed is greater than 0 degrees and less than 90 degrees, and the cross-sectional shape has such that the thickness increases continuously from the end.

[0193] Furthermore, by using an organic resin for the insulating layer 119, its surface can be made gently curved. This improves the coverage of the film formed on the insulating layer 119.

[0194] Examples of materials that can be used for the insulating layer 119 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0195] Alternatively, an inorganic insulating material may be used as the insulating layer 119. Examples of inorganic insulating materials that can be used for the insulating layer 119 include oxide or nitride films such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, aluminum oxide, aluminum oxide nitride, or hafnium oxide. In addition, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used.

[0196] As shown in Figure 23C, the two organic layers are spaced apart between light-emitting devices of different colors, and between light-emitting devices and light-receiving devices, with gaps between them. It is preferable that the organic layers 312R, 312B, and 315 are arranged so that they do not touch each other. This effectively prevents current from flowing through two adjacent organic layers, thus preventing unintended light emission. Therefore, contrast can be enhanced, and a display device with high display quality can be realized.

[0197] Organic layer 312R, organic layer 312B, and organic layer 315 preferably have a taper angle of 30 degrees or more. Organic layer 312R, organic layer 312G, and organic layer 312B preferably have an angle between the side surface (front) and the bottom surface (formed surface) at the end of 30 degrees or more and 120 degrees or less, preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees or more and 120 degrees or less. Alternatively, organic layer 312R, organic layer 312G, and organic layer 312B preferably have a taper angle of 90 degrees or near that (for example, 80 degrees or more and 100 degrees or less).

[0198] A protective layer 321 is provided on the common electrode 313. The protective layer 321 has the function of preventing impurities such as water from diffusing to each light-emitting device from above.

[0199] The protective layer 321 can be, for example, a single-layer structure or a multilayer structure including at least an inorganic insulating film. Examples of inorganic insulating films include oxide films or nitride films such as silicon oxide film, silicon oxide nitride film, silicon nitride film, silicon nitride film, aluminum oxide film, aluminum oxide nitride film, and hafnium oxide film. Alternatively, semiconductor materials such as indium gallium oxide and indium gallium zinc oxide may be used as the protective layer 321.

[0200] Furthermore, a laminated film of an inorganic insulating film and an organic insulating film can be used as the protective layer 321. For example, it is preferable to have a configuration in which an organic insulating film is sandwiched between a pair of inorganic insulating films. It is also preferable that the organic insulating film functions as a planarizing film. This makes the upper surface of the organic insulating film flat, thereby improving the coverage of the inorganic insulating film on top of it and enhancing its barrier properties. In addition, since the upper surface of the protective layer 321 is flat, it is preferable because it reduces the influence of uneven shapes caused by the structure below when a structure (e.g., an antenna, touch sensor electrodes, a color filter, or a lens array) is provided above the protective layer 321.

[0201] Figure 23C shows an example in which a planarization film 322 is provided on a protective layer 321, and a layer 151 having a conductive layer 131 that functions as an antenna is provided on the planarization film 322. The conductive layer 131 is formed in a position that overlaps with the insulating layer 119 provided between the photoreceiving devices.

[0202] In the connection portion 330, a common electrode 313 is provided in contact with the connecting electrode 311C, and a protective layer 321 is provided covering the common electrode 313. In addition, an insulating layer 119 is provided covering the end of the connecting electrode 311C.

[0203] The following describes an example of a display device configuration that differs in some aspects from Figure 23C. Specifically, an example is shown in which the insulating layer 119 is not provided.

[0204] Figures 24A to 24C show examples where the side surface of the pixel electrode 311 roughly coincides with the side surface of the organic layer 312R, organic layer 312B, or organic layer 315.

[0205] In Figure 24A, the organic layer 314 is provided covering the top and side surfaces of organic layers 312R, 312B, and 315. The organic layer 314 prevents the pixel electrode 311 and the common electrode 313 from coming into contact and causing an electrical short circuit.

[0206] Figure 24B shows an example having organic layers 312R, 312B, and 315, as well as an insulating layer 325 provided in contact with the side surface of the pixel electrode 311. The insulating layer 325 effectively suppresses electrical short circuits between the pixel electrode 311 and the common electrode 313, and leakage current between them.

[0207] The insulating layer 325 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 325. The insulating layer 325 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. In particular, by applying inorganic insulating films such as aluminum oxide films, hafnium oxide films, and silicon oxide films formed by the ALD method to the insulating layer 325, an insulating layer 325 can be formed that has few pinholes and excellent function in protecting the organic layer.

[0208] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0209] The insulating layer 325 can be formed using sputtering, CVD, PLD, ALD, or other methods. It is preferable to form the insulating layer 325 using the ALD method, which provides good coverage.

[0210] In Figure 24C, a resin layer 326 is provided between two adjacent light-emitting devices or between a light-emitting device and a light-receiving device, filling the gap between two opposing pixel electrodes and the gap between two opposing organic layers. The resin layer 326 flattens the surfaces to be formed on, such as the organic layer 314 and the common electrode 313, thereby preventing the common electrode 313 from breaking due to poor coating of the step difference between adjacent light-emitting devices.

[0211] As the resin layer 326, an insulating layer having an organic material can be suitably used. For example, as the resin layer 326, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be applied. Alternatively, as the resin layer 326, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, and alcohol-soluble polyamide resin may be used. Furthermore, a photosensitive resin can be used as the resin layer 326. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0212] Furthermore, it is preferable to use a material that absorbs visible light as the resin layer 326. By using a material that absorbs visible light for the resin layer 326, the light emitted from the EL layer can be absorbed by the resin layer 326, blocking stray light from adjacent pixels and suppressing color mixing. Therefore, a display device with high display quality can be provided.

[0213] In Figure 24D, an insulating layer 325 and a resin layer 326 are provided on the insulating layer 325. Because the insulating layer 325 prevents the organic layer 312R and the resin layer 326 from coming into contact, impurities such as moisture contained in the resin layer 326 can be prevented from diffusing into the organic layer 312R, resulting in a highly reliable display device.

[0214] Furthermore, a mechanism may be provided to improve light extraction efficiency by providing a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum) between the insulating layer 325 and the resin layer 326, and reflecting the light emitted from the light-emitting layer with the reflective film.

[0215] Figures 25A to 25C show examples where the width of the pixel electrode 311 is greater than the width of the organic layer 312R, organic layer 312B, or organic layer 315. The organic layer 312R, etc., is located inside the edge of the pixel electrode 311.

[0216] Figure 25A shows an example where an insulating layer 325 is present. The insulating layer 325 is provided to cover the sides of the organic layer of the light-emitting device or light-receiving device, and a portion of the upper surface and sides of the pixel electrode 311.

[0217] Figure 25B shows an example in which a resin layer 326 is present. The resin layer 326 is located between two adjacent light-emitting devices or between a light-emitting device and a light-receiving device, and covers the sides of the organic layer and the top and sides of the pixel electrode 311.

[0218] Figure 25C shows an example where both an insulating layer 325 and a resin layer 326 are present. The insulating layer 325 is provided between the organic layer 312R, etc., and the resin layer 326.

[0219] Figures 26A to 26D show examples where the width of the pixel electrode 311 is smaller than the width of the organic layer 312R, organic layer 312B, or organic layer 315. The organic layer 312R, etc., extends outward beyond the edge of the pixel electrode 311.

[0220] Figure 26B shows an example having an insulating layer 325. The insulating layer 325 is provided in contact with the side surfaces of the organic layers of two adjacent light-emitting devices. Note that the insulating layer 325 may cover not only the side surfaces of the organic layer 312R, etc., but also a portion of the top surface.

[0221] Figure 26C shows an example having a resin layer 326. The resin layer 326 is located between two adjacent light-emitting devices and covers part of the sides and top surface of the organic layer 312R, etc. Alternatively, the resin layer 326 may be in contact with the sides of the organic layer 312R, etc., but not cover the top surface.

[0222] Figure 26D shows an example where both an insulating layer 325 and a resin layer 326 are present. The insulating layer 325 is provided between the organic layer 312R and the resin layer 326.

[0223] Here, we will describe an example of the configuration of the resin layer 326.

[0224] While a flat upper surface of the resin layer 326 is preferable, the surface of the resin layer 326 may be concave or convex depending on the uneven shape of the surface on which the resin layer 326 is formed, the formation conditions of the resin layer 326, and other factors.

[0225] Figures 27A to 28F show the ends of the pixel electrode 311R of the light-emitting device 90R, the ends of the pixel electrode 311G of the light-emitting device 90G, and magnified views of their vicinity. An organic layer 312G is provided on the pixel electrode 311G.

[0226] Figures 27A, 27B, and 27C show enlarged views of the resin layer 326 and its vicinity when the upper surface of the resin layer 326 is flat. Figure 27A is an example where the width of the organic layer 312R, etc. is greater than that of the pixel electrode 311. Figure 27B is an example where their widths are roughly the same. Figure 27C is an example where the width of the organic layer 312R, etc. is smaller than that of the pixel electrode 311.

[0227] As shown in Figure 27A, since the organic layer 312R is provided covering the end of the pixel electrode 311R, it is preferable that the end of the pixel electrode 311R has a tapered shape. This improves the step coverage of the organic layer 312R, resulting in a highly reliable display device. However, as shown in Figure 27C, even when the organic layer 312R does not cover the end of the pixel electrode 311R, the shape of the end of the pixel electrode 311R may also be tapered.

[0228] Figures 27D, 27E, and 27F show an example where the upper surface of the resin layer 326 is concave. In this case, concave portions are formed on the upper surfaces of the organic layer 314, the common electrode 313, and the protective layer 321, reflecting the concave upper surface of the resin layer 326.

[0229] Figures 28A, 28B, and 28C show an example where the upper surface of the resin layer 326 is convex. In this case, convex portions are formed on the upper surfaces of the organic layer 314, the common electrode 313, and the protective layer 321, reflecting the convex upper surface of the resin layer 326.

[0230] Figures 28D, 28E, and 28F show an example where a portion of the resin layer 326 covers a portion of the upper end and upper surface of the organic layer 312R, and a portion of the upper end and upper surface of the organic layer 312G. In this case, an insulating layer 325 is provided between the resin layer 326 and the upper surface of the organic layer 312R or the organic layer 312G.

[0231] Furthermore, Figures 28D, 28E, and 28F show an example where a portion of the upper surface of the resin layer 326 is concave. In this case, the organic layer 314, the common electrode 313, and the protective layer 321 form an uneven shape that reflects the shape of the resin layer 326.

[0232] Furthermore, as shown in Figure 28F, the ends of the pixel electrode 311R and the pixel electrode 311G have a tapered shape. Additionally, an organic layer 312G is formed to cover the end of the pixel electrode 311R, and an organic layer 312G is formed to cover the end of the pixel electrode 311G. The insulating layer 301 has a recess between the pixel electrode 311R and the pixel electrode 311G. This recess is formed during the processing of the pixel electrode 311R and the pixel electrode 311G.

[0233] Furthermore, as shown in Figure 28F, an insulating layer 325 is provided so as to cover the edges of the organic layer 312R and the organic layer 312G, and a sacrificial layer 327R is provided in the region between the organic layer 312R and the insulating layer 325. Also, a sacrificial layer 327G is provided in the region between the organic layer 312G and the insulating layer 325. The sacrificial layer 327R and the sacrificial layer 327G function as masks (also called hard masks) when processing the organic layer 312R and the organic layer 312G, respectively. The organic layer 312R and the organic layer 312G can be inorganic films, more specifically inorganic conductive films (typically tungsten), or inorganic insulating films (typically silicon oxide, silicon nitride, or aluminum oxide).

[0234] Furthermore, as shown in Figure 28F, recesses are formed in the insulating layer 301 located in the region between the organic layer 312R and the organic layer 312G. These recesses are formed when the organic layer 312R and the organic layer 312G are processed.

[0235] As shown in Figure 28F, the organic layer 314 is formed so as to cover the organic layer 312G, the sacrificial layer 327R, the sacrificial layer 327G, the insulating layer 325, and the resin layer 326, and the common electrode 313 and the protective layer 321 are provided on the organic layer 314.

[0236] As shown in Figure 28F, in a cross-sectional view, it is preferable to have a tapered shape at least a portion of the end shape of the resin layer 326, as this improves the coverage of the organic layer 314 and the common electrode 313.

[0237] The above is an explanation of an example of the resin layer's composition.

[0238] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments.

[0239] (Embodiment 4) This embodiment describes a display device having a light-receiving device and a light-emitting device, which is one aspect of the present invention.

[0240] A display unit of a display device according to one aspect of the present invention includes a light-receiving device and a light-emitting device. The display unit has the function of displaying an image using the light-emitting device. Furthermore, the display unit has either or both the function of capturing an image and / or the function of sensing using the light-receiving device.

[0241] Alternatively, a display device according to one aspect of the present invention may have a configuration comprising a light-receiving device (also called a light-emitting or light-receiving device) and a light-emitting device.

[0242] First, a display device having a light-receiving device and a light-emitting device will be described.

[0243] A display device according to one aspect of the present invention has a display unit comprising a light-receiving device and a light-emitting device. In this display device according to one aspect of the present invention, the light-emitting devices are arranged in a matrix in the display unit, and an image can be displayed on the display unit. Furthermore, the light-receiving devices are arranged in a matrix in the display unit, and the display unit has either or both an imaging function and a sensing function. The display unit can be used as an image sensor, a touch sensor, etc. That is, by detecting light with the display unit, it is possible to capture an image or detect touch operations of an object (finger, pen, etc.). Moreover, in this display device according to one aspect of the present invention, the light-emitting device can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0244] In one embodiment of the present invention, when an object reflects (or scatters) light emitted by a light-emitting device of the display unit, a light-receiving device can detect the reflected (or scattered) light, making it possible to perform actions such as image capture and touch operation detection even in dark places.

[0245] A light-emitting device in a display device according to one aspect of the present invention functions as a display device (also called a display element).

[0246] As the light-emitting device, it is preferable to use EL elements (also called EL devices) such as OLEDs and QLEDs. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. Alternatively, LEDs such as microLEDs can also be used as light-emitting devices.

[0247] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving device.

[0248] When a light-receiving device is used as an image sensor, a display device can capture an image using the light-receiving device. For example, the display device can be used as a scanner.

[0249] An electronic device to which a display device according to one aspect of the present invention is applied can acquire data related to biometric information such as fingerprints and palm prints using its function as an image sensor. In other words, a biometric authentication sensor can be built into the display device. By building a biometric authentication sensor into the display device, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided in the display device, enabling miniaturization and weight reduction of the electronic device.

[0250] Furthermore, when a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect touch operations on an object. In other words, the light-receiving device can be rephrased as an input device.

[0251] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion element (also called a photoelectric conversion device) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined based on the amount of light incident on it.

[0252] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0253] In one aspect of the present invention, an organic EL element (also called an organic EL device) is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL element and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL element.

[0254] If all the layers constituting an organic EL element and an organic photodiode were to be fabricated separately, the number of film deposition steps would become enormous. However, since organic photodiodes have many layers that can share the same configuration as organic EL elements, the increase in film deposition steps can be suppressed by depositing these common layers in a single process.

[0255] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the photodetector and the light-emitting device. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be a common layer for both the photodetector and the light-emitting device. By having a common layer for both the photodetector and the light-emitting device in this way, the number of film deposition cycles and masks can be reduced, thereby reducing the manufacturing process and cost of the display device. Furthermore, a display device having a photodetector can be manufactured using existing manufacturing equipment and methods for display devices.

[0256] Next, a light-receiving device and a display device having a light-emitting device will be described. Note that explanations of functions, operations, and effects similar to those described above may be omitted.

[0257] In a display device according to one aspect of the present invention, subpixels exhibiting any color have a light-receiving device instead of a light-emitting device, while subpixels exhibiting other colors have a light-emitting device. The light-receiving device has both a function to emit light (light-emitting function) and a function to receive light (light-receiving function). For example, if a pixel has three subpixels, a red subpixel, a green subpixel, and a blue subpixel, at least one subpixel has a light-receiving device, and the other subpixels have light-emitting devices. Therefore, the display unit of the display device according to one aspect of the present invention has the function of displaying an image using both a light-receiving device and a light-emitting device.

[0258] By having a light-receiving device serve as both a light-emitting device and a light-receiving device, it is possible to add a light-receiving function to a pixel without increasing the number of subpixels included in the pixel. This makes it possible to add either or both an imaging function and a sensing function to the display section of a display device while maintaining the aperture ratio of the pixel (aperture ratio of each subpixel) and the resolution of the display device. Therefore, one embodiment of the present invention allows for a higher aperture ratio of the pixel and facilitates high resolution compared to a case where subpixels having light-receiving devices are provided separately from subpixels having light-emitting devices.

[0259] A display device according to one aspect of the present invention has a display unit in which light-emitting and light-receiving devices and light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. The display unit can also be used as an image sensor, a touch sensor, etc. In a display device according to one aspect of the present invention, the light-emitting device can be used as a light source for a sensor. Therefore, imaging and detection of touch operations are possible even in dark places.

[0260] Light-emitting and receiving devices can be fabricated by combining organic EL elements and organic photodiodes. For example, a light-emitting and receiving device can be fabricated by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. Furthermore, when fabricating a light-emitting and receiving device by combining an organic EL element and an organic photodiode, the number of film deposition steps can be suppressed by depositing layers that can have a common structure with the organic EL element in a single process.

[0261] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the light-emitting / receiving device and the light-emitting device. Alternatively, at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer can be a common layer for both the light-emitting / receiving device and the light-emitting device.

[0262] Furthermore, the layers of a light-receiving device may have different functions depending on whether the device is functioning as a light-receiving device or a light-emitting device. In this specification, the components are referred to based on their function when the light-receiving device is functioning as a light-emitting device.

[0263] The display device of this embodiment has the function of displaying an image using a light-emitting device and a light-receiving device. In other words, the light-emitting device and the light-receiving device function as display elements.

[0264] The display device of this embodiment has a function of detecting light using a light-receiving device. The light-receiving device can detect light with a shorter wavelength than the light it emits itself.

[0265] When the light-receiving device is used as an image sensor, the display device of this embodiment can capture an image using the light-receiving device. Furthermore, when the light-receiving device is used as a touch sensor, the display device of this embodiment can detect touch operations on an object using the light-receiving device.

[0266] The light-receiving and light-emitting device functions as a photoelectric conversion element. The light-receiving and light-emitting device can be fabricated by adding the active layer of a photodetector to the configuration of the light-emitting device described above. For example, the active layer of a pn-type or pin-type photodiode can be used for the light-receiving and light-emitting device.

[0267] In particular, it is preferable to use an organic photodiode with an active layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to a variety of devices.

[0268] In the following section, a display device, which is an example of a display device according to one aspect of the present invention, will be described in more detail with reference to the drawings.

[0269] [Example of a display device configuration] [Configuration Example 1-1] FIG. 29A is a schematic diagram of a display panel 200. The display panel 200 includes a substrate 201, a substrate 202, a light-receiving device 212, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a functional layer 203, and the like.

[0270] The light-emitting device 211R, the light-emitting device 211G, the light-emitting device 211B, and the light-receiving device 212 are provided between the substrate 201 and the substrate 202. The light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B respectively emit red (R), green (G), and blue (B) light. Hereinafter, when the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B are not distinguished from each other, they may be referred to as the light-emitting device 211.

[0271] The display panel 200 includes a plurality of pixels arranged in a matrix. One pixel includes one or more sub-pixels. One sub-pixel includes one light-emitting device. For example, the pixel may employ a configuration having three sub-pixels (three colors of R, G, B, or three colors of yellow (Y), cyan (C), and magenta (M), for example), or a configuration having four sub-pixels (four colors of R, G, B, white (W), or four colors of R, G, B, Y, for example). Furthermore, the pixel includes the light-receiving device 212. The light-receiving device 212 may be provided in all pixels or may be provided in some pixels. Further, one pixel may include a plurality of light-receiving devices 212.

[0272] FIG. 29A shows a state where a finger 220 touches the surface of the substrate 202. Part of the light emitted from the light-emitting device 211G is reflected at the contact portion between the substrate 202 and the finger 220. Then, when part of the reflected light is incident on the light-receiving device 212, it can be detected that the finger 220 has contacted the substrate 202. That is, the display panel 200 can function as a touch panel.

[0273] The functional layer 203 includes a circuit that drives the light-emitting device 211R, the light-emitting device 211G, and the light-emitting device 211B, and a circuit that drives the light-receiving device 212. Switches, transistors, capacitors, wiring, and the like are provided in the functional layer 203. Note that in a case where the light-emitting device 211R, the light-emitting device 211G, the light-emitting device 211B, and the light-receiving device 212 are driven by a passive matrix method, a configuration without switches, transistors, or the like may be employed.

[0274] The display panel 200 preferably has a function of detecting a fingerprint of a finger 220. FIG. 29B schematically illustrates an enlarged view of a contact portion in a state where the finger 220 is in contact with a substrate 202. Further, FIG. 29B illustrates the light-emitting devices 211 and the light-receiving devices 212 that are alternately arranged.

[0275] A fingerprint of the finger 220 is formed by concave portions and convex portions. Therefore, as illustrated in FIG. 29B, the convex portions of the fingerprint are in contact with the substrate 202.

[0276] Light reflected from a surface, an interface, or the like includes specular reflection and diffuse reflection. Specularly reflected light is highly directional light in which an incident angle matches a reflection angle, and diffusely reflected light is low-directionality light having low angular dependence of intensity. For light reflected from the surface of the finger 220, a diffuse reflection component is dominant between specular reflection and diffuse reflection. On the other hand, for light reflected from an interface between the substrate 202 and the atmosphere, a specular reflection component is dominant.

[0277] The intensity of light reflected by a contact surface or a non-contact surface between the finger 220 and the substrate 202 and incident on the light-receiving device 212 located immediately thereunder is a sum of the specularly reflected light and the diffusely reflected light. As described above, since the substrate 202 and the finger 220 are not in contact with each other in a concave portion of the finger 220, specularly reflected light (indicated by solid arrows) is dominant. In a convex portion, since the substrate 202 and the finger 220 are in contact with each other, diffusely reflected light from the finger 220 (indicated by broken arrows) is dominant. Accordingly, the intensity of light received by the light-receiving device 212 located immediately below a concave portion is higher than that of light received by the light-receiving device 212 located immediately below a convex portion. This allows a fingerprint of the finger 220 to be imaged.

[0278] The spacing between the light-receiving devices 212 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between an adjacent recess and a protrusion, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is approximately 200 μm, for example, the spacing between the light-receiving devices 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0279] Figure 29C shows an example of a fingerprint image captured by the display panel 200. In Figure 29C, the outline of the finger 220 is shown with a dashed line and the outline of the contact area 221 is shown with a dashed line within the imaging range 223. Within the contact area 221, a high-contrast fingerprint 222 can be captured due to the difference in the amount of light incident on the light-receiving device 212.

[0280] The display panel 200 can also function as a touch panel and a pen tablet. Figure 29D shows the tip of the stylus 225 in contact with the substrate 202 and being slid in the direction of the dashed arrow.

[0281] As shown in Figure 29D, diffusely reflected light diffused between the tip of the stylus 225 and the contact surface of the substrate 202 is incident on the light-receiving device 212 located in the area overlapping with the contact surface, thereby enabling high-precision detection of the position of the tip of the stylus 225.

[0282] Figure 29E shows an example of the trajectory 226 of the stylus 225 detected by the display panel 200. Because the display panel 200 can detect the position of the object being detected, such as the stylus 225, with high positional accuracy, it is possible to perform high-resolution drawing in drawing applications, etc. Furthermore, unlike when using capacitive touch sensors or electromagnetic induction type touch pens, it is possible to detect the position of the object being detected even if it has high insulating properties, so the material of the tip of the stylus 225 is not a concern, and various writing instruments (e.g., brushes, glass pens, quill pens, etc.) can be used.

[0283] Here, Figures 29F to 29H show an example of a pixel applicable to the display panel 200.

[0284] The pixels shown in Figures 29F and 29G each have a red (R) light-emitting device 211R, a green (G) light-emitting device 211G, a blue (B) light-emitting device 211B, and a light-receiving device 212. Each pixel has a pixel circuit for driving the light-emitting devices 211R, 211G, 211B, and 212, respectively.

[0285] Figure 29F shows an example where three light-emitting devices and one light-receiving device are arranged in a 2x2 matrix. Figure 29G shows an example where three light-emitting devices are arranged in a row, with a horizontally elongated light-receiving device 212 positioned below them.

[0286] The pixel shown in Figure 29H is an example having a white (W) light-emitting device 211W. Here, four light-emitting devices are arranged in a row, with a light-receiving device 212 positioned below them.

[0287] Furthermore, the pixel configuration is not limited to the above, and various arrangement methods can be adopted.

[0288] [Configuration Example 1-2] The following describes an example of a configuration comprising a light-emitting device that emits visible light, a light-emitting device that emits infrared light, and a light-receiving device.

[0289] A display panel 200A shown in FIG. 30A includes a light-emitting device 211IR in addition to the configuration exemplified in FIG. 29A. The light-emitting device 211IR is a light-emitting device that emits infrared light IR. In this case, it is preferable to use, for the light-receiving device 212, an element capable of receiving at least the infrared light IR emitted from the light-emitting device 211IR. Furthermore, it is more preferable to use an element capable of receiving both visible light and infrared light as the light-receiving device 212.

[0290] As shown in FIG. 30A, when a finger 220 touches a substrate 202, the infrared light IR emitted from the light-emitting device 211IR is reflected by the finger 220, and a part of the reflected light is incident on the light-receiving device 212, whereby positional information of the finger 220 can be acquired.

[0291] FIGS. 30B to 30D show examples of pixels applicable to the display panel 200A.

[0292] FIG. 30B is an example in which three light-emitting devices are arranged in a row, and the light-emitting device 211IR and the light-receiving device 212 are arranged side by side laterally below the row. FIG. 30C is an example in which four light-emitting devices including the light-emitting device 211IR are arranged in a row, and the light-receiving device 212 is arranged below the row.

[0293] FIG. 30D is an example in which three light-emitting devices and the light-receiving device 212 are arranged on four sides with the light-emitting device 211IR at the center.

[0294] Note that in the pixels shown in FIGS. 30B to 30D, the positions of the light-emitting devices can be interchanged with each other, and the positions of the light-emitting devices and the light-receiving device can be interchanged.

[0295] [Configuration Example 1-3] Hereinafter, an example of a configuration including a light-emitting device that emits visible light, and a light-emitting and light-receiving device that emits visible light and receives visible light will be described.

[0296] The display panel 200B shown in Figure 31A includes a light-emitting device 211B, a light-emitting device 211G, and a light-receiving device 213R. The light-receiving device 213R has the function of a light-emitting device that emits red (R) light and a function of a photoelectric conversion element that receives visible light. Figure 31A shows an example in which the light-receiving device 213R receives green (G) light emitted by the light-emitting device 211G. The light-receiving device 213R may also receive blue (B) light emitted by the light-emitting device 211B. Furthermore, the light-receiving device 213R may receive both green and blue light.

[0297] For example, it is preferable that the light-receiving device 213R receives light with a shorter wavelength than the light it emits. Alternatively, the light-receiving device 213R may be configured to receive light with a longer wavelength than the light it emits (e.g., infrared light). The light-receiving device 213R may also be configured to receive light with a wavelength similar to the light it emits, but in that case, it may also receive the light it emits, which may reduce its luminescence efficiency. Therefore, it is preferable that the light-receiving device 213R be configured such that the peaks of its emission spectrum and the peaks of its absorption spectrum do not overlap as much as possible.

[0298] Furthermore, the light emitted by the light-receiving device is not limited to red light. Nor is the light emitted by the light-receiving device limited to a combination of green and blue light. For example, the light-receiving device can be an element that emits green or blue light and receives light of a different wavelength than the light it emits.

[0299] In this way, by having the light-emitting and light-receiving device 213R serve as both a light-emitting and light-receiving device, the number of elements arranged in a single pixel can be reduced. This makes it easier to achieve higher resolution, higher aperture ratio, and higher resolution.

[0300] Figures 31B to 31I show examples of pixels applicable to the display panel 200B.

[0301] Figure 31B shows an example where the light-emitting / receiving device 213R, light-emitting device 211G, and light-emitting device 211B are arranged in a single row. Figure 31C shows an example where the light-emitting devices 211G and 211B are arranged alternately in the vertical direction, with the light-emitting / receiving device 213R positioned to the side of them.

[0302] Figure 31D shows an example where three light-emitting devices (light-emitting device 211G, light-emitting device 211B, and light-emitting device 211X) and one light-receiving device are arranged in a 2x2 matrix. Light-emitting device 211X is an element that emits light other than R, G, and B. Examples of light other than R, G, and B include white (W), yellow (Y), cyan (C), magenta (M), infrared (IR), and ultraviolet (UV) light. If light-emitting device 211X emits infrared light, it is preferable that the light-receiving device has the function of detecting infrared light, or the function of detecting both visible light and infrared light. The wavelength of light detected by the light-receiving device can be determined according to the application of the sensor.

[0303] Figure 31E shows two pixels. The area enclosed by the dotted line, containing three elements, corresponds to one pixel. Each pixel has a light-emitting device 211G, a light-emitting device 211B, and a light-receiving device 213R. In the left pixel shown in Figure 31E, the light-emitting device 211G is located in the same row as the light-receiving device 213R, and the light-emitting device 211B is located in the same column as the light-receiving device 213R. In the right pixel shown in Figure 31E, the light-emitting device 211G is located in the same row as the light-receiving device 213R, and the light-emitting device 211B is located in the same column as the light-emitting device 211G. In the pixel layout shown in Figure 31E, the light-receiving devices 213R, 211G, and 211B are repeatedly arranged in both odd and even rows, and in each column, the light-emitting devices or light-receiving devices of different colors are arranged in odd and even rows.

[0304] Figure 31F shows four pixels to which a PenTile array has been applied, and two adjacent pixels have light-emitting or light-receiving devices that emit two different colors of light in different combinations. Figure 31F also shows the top surface shape of the light-emitting or light-receiving device.

[0305] In Figure 31F, the upper left and lower right pixels have a light-emitting / receiving device 213R and a light-emitting device 211G. The upper right and lower left pixels have a light-emitting device 211G and a light-emitting device 211B. In other words, in the example shown in Figure 31F, each pixel is provided with a light-emitting device 211G.

[0306] The top surface shape of the light-emitting device and the light-receiving device is not particularly limited and can be a circle, ellipse, polygon, polygon with rounded corners, etc. Figure 31F shows an example where the top surface shape of the light-emitting device and the light-receiving device is a square (rhombus) tilted at approximately 45 degrees. Note that the top surface shapes of the light-emitting device and the light-receiving device for each color may be different from each other, or they may be the same for some or all colors.

[0307] Furthermore, the sizes of the light-emitting regions (or light-receiving regions) of each color's light-emitting device and light-receiving device may differ from each other, or they may be the same for some or all colors. For example, in Figure 31F, the area of ​​the light-emitting region of the light-emitting device 211G provided in each pixel may be smaller than the light-emitting region (or light-receiving region) of the other elements.

[0308] Figure 31G is a modified version of the pixel arrangement shown in Figure 31F. Specifically, the configuration in Figure 31G is obtained by rotating the configuration in Figure 31F by 45 degrees. In Figure 31F, it was explained that one pixel has two elements, but as shown in Figure 31G, it can also be considered that one pixel is composed of four elements.

[0309] Figure 31H shows a modified version of the pixel arrangement shown in Figure 31F. The upper left and lower right pixels in Figure 31H have a light-emitting / receiving device 213R and a light-emitting device 211G. The upper right and lower left pixels also have a light-emitting / receiving device 213R and a light-emitting device 211B. In other words, in the example shown in Figure 31H, each pixel is provided with a light-emitting / receiving device 213R. Because each pixel is provided with a light-emitting / receiving device 213R, the configuration shown in Figure 31H can perform imaging with higher resolution compared to the configuration shown in Figure 31F. This can improve the accuracy of, for example, biometric authentication.

[0310] Figure 31I shows a modified version of the pixel array shown in Figure 31H, which is obtained by rotating the pixel array by 45 degrees.

[0311] In Figure 31I, we explain that one pixel is composed of four elements (two light-emitting devices and two light-receiving devices). In this way, by having multiple light-receiving devices with light-receiving capabilities in a single pixel, imaging can be performed with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the resolution of the image can be made to be the square root of 2 times the resolution of the display.

[0312] A display device to which the configuration shown in Figure 31H or Figure 31I is applied has p (where p is an integer greater than or equal to 2) first light-emitting devices, q (where q is an integer greater than or equal to 2) second light-emitting devices, and r (where r is an integer greater than p and greater than q) light-receiving devices. p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first and second light-emitting devices emits green light, and the other emits blue light. The light-receiving devices emit red light and have a light-receiving function.

[0313] For example, when detecting touch operations using a light-receiving device, it is preferable that the light emitted from the light source is not easily visible to the user. Since blue light is less visible than green light, it is preferable to use a light-emitting device that emits blue light as the light source. Therefore, it is preferable that the light-receiving device has the function of receiving blue light. However, it is not limited to this, and the light-emitting device to be used as the light source can be appropriately selected according to the sensitivity of the light-receiving device.

[0314] As described above, various pixel arrangements can be applied to the display device of this embodiment.

[0315] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0316] (Embodiment 5) In this embodiment, a light-emitting device (also called a light-emitting element) and a light-receiving device (also called a light-receiving element) that can be used in a display device according to one aspect of the present invention will be described.

[0317] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices. Because MML structured display devices are fabricated without a metal mask, they offer greater design flexibility in terms of pixel arrangement and pixel shape compared to FMM or MM structured display devices.

[0318] Furthermore, in the manufacturing method for MML-structured display devices, the island-shaped organic layers (hereinafter referred to as EL layers) that constitute the organic EL elements are not formed by the pattern of a metal mask, but rather by processing after the EL layer has been deposited on one surface. Therefore, it is possible to realize high-definition display devices or display devices with a high aperture ratio, which have been difficult to achieve until now. In addition, since the EL layers can be manufactured separately for each color, it is possible to realize display devices that are extremely vivid, have high contrast, and have high display quality. Moreover, by providing a sacrificial layer on the EL layer, the damage that the EL layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0319] Furthermore, a display device according to one aspect of the present invention can have a structure in which no insulator is provided to cover the ends of the pixel electrodes. In other words, a configuration in which no insulator is provided between the pixel electrodes and the EL layer. With this configuration, the light emitted from the EL layer can be efficiently extracted, so the viewing angle dependence can be made extremely small. For example, in a display device according to one aspect of the present invention, the viewing angle (the maximum angle at which a constant contrast ratio is maintained when viewing the screen from an oblique direction) can be in the range of 100° or more and less than 180°, preferably 150° or more and 170° or less. The above viewing angle can be applied to both vertical and horizontal directions. By using a display device according to one aspect of the present invention, the viewing angle dependence is improved, and the visibility of the image can be enhanced.

[0320] Furthermore, when using a fine metal mask (FMM) structure for the display device, there may be limitations on the pixel arrangement configuration. The FMM structure will be explained below.

[0321] To fabricate an FMM structure, a metal mask (also called an FMM) with openings is set opposite the substrate during EL deposition, allowing the EL material to be deposited in the desired area. Subsequently, the EL material is deposited through the FMM to form an EL layer in the desired area. As the substrate size increases during EL deposition, the size and weight of the FMM also increase. Furthermore, the FMM may deform due to heat and other factors applied during EL deposition. Alternatively, methods exist to apply a constant tension to the FMM during deposition, making the weight and strength of the FMM important parameters.

[0322] Therefore, when designing the pixel arrangement configuration of an FMM structure device, it is necessary to consider the above parameters and other factors, and the design must be considered under certain limitations. On the other hand, in one embodiment of the present invention, since the display device is manufactured using an MML structure, it offers superior advantages such as greater flexibility in the pixel arrangement configuration compared to the FMM structure. Furthermore, this configuration has high compatibility with flexible devices, for example, and various circuit arrangements can be used for either the pixels or the driving circuit, or both.

[0323] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. Also, in this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0324] [Light-emitting devices] Furthermore, light-emitting devices can be broadly classified into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that the light-emitting unit includes one or more light-emitting layers. When obtaining white light emission using two light-emitting layers, the light-emitting layers should be selected such that the light-emitting colors of each of the two layers are complementary colors. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary colors, a configuration that emits white light as a whole can be obtained. Also, when obtaining white light emission using three or more light-emitting layers, the light-emitting device should be configured so that the light-emitting colors of the three or more layers combine to emit white light as a whole.

[0325] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. By using light-emitting layers that emit light of the same color in each light-emitting unit, the brightness per given current can be increased, and a more reliable light-emitting device can be achieved compared to a single structure. To obtain white light emission in a tandem structure, the light from the light-emitting layers of multiple light-emitting units can be combined to produce white light emission. The combination of light-emitting colors that produces white light emission is the same as that for a single structure. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0326] Furthermore, when comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use SBS structure light-emitting devices. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0327] <Example of light-emitting device configuration> As shown in Figure 32A, the light-emitting device has an EL layer 790 between a pair of electrodes (lower electrode 791, upper electrode 792). The EL layer 790 can be composed of multiple layers, such as layer 720, light-emitting layer 711, and layer 730. Layer 720 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). The light-emitting layer 711 may include, for example, a light-emitting compound. Layer 730 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0328] A configuration having a layer 720, an emissive layer 711, and a layer 730 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 32A is referred to as a single structure.

[0329] Furthermore, Figure 32B shows a modified example of the EL layer 790 of the light-emitting device shown in Figure 32A. Specifically, the light-emitting device shown in Figure 32B includes a layer 730-1 on the lower electrode 791, a layer 730-2 on layer 730-1, a light-emitting layer 711 on layer 730-2, a layer 720-1 on the light-emitting layer 711, a layer 720-2 on layer 720-1, and an upper electrode 792 on layer 720-2. For example, when the lower electrode 791 is the anode and the upper electrode 792 is the cathode, layer 730-1 functions as a hole injection layer, layer 730-2 functions as a hole transport layer, layer 720-1 functions as an electron transport layer, and layer 720-2 functions as an electron injection layer. Alternatively, if the lower electrode 791 is used as the cathode and the upper electrode 792 as the anode, layer 730-1 functions as an electron injection layer, layer 730-2 functions as an electron transport layer, layer 720-1 functions as a hole transport layer, and layer 720-2 functions as a hole injection layer. By using such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 711 and increase the efficiency of carrier recombination within the light-emitting layer 711.

[0330] Furthermore, as shown in Figures 32C and 32D, a configuration in which multiple light-emitting layers (light-emitting layers 711, 712, and 713) are provided between layer 720 and layer 730 is also a variation of the single structure.

[0331] Furthermore, as shown in Figures 32E and 32F, a configuration in which multiple light-emitting units (EL layers 790a, EL layers 790b) are connected in series via an intermediate layer (charge generation layer) 740 is referred to as a tandem structure in this specification. In this specification, the configuration shown in Figures 32E and 32F is referred to as a tandem structure, but it is not limited to this, and for example, a tandem structure may also be called a stack structure. By using a tandem structure, a light-emitting device capable of high-brightness light emission can be made.

[0332] In Figure 32C, the light-emitting layers 711, 712, and 713 may be made of light-emitting materials that emit light of the same color.

[0333] Furthermore, different light-emitting materials may be used for the light-emitting layers 711, 712, and 713. When the light emitted by the light-emitting layers 711, 712, and 713 are complementary in color, white light emission is obtained. Figure 32D shows an example in which a colored layer 795, which functions as a color filter, is provided. By passing white light through the color filter, light of the desired color can be obtained.

[0334] Furthermore, in Figure 32E, the same light-emitting material may be used for both the light-emitting layer 711 and the light-emitting layer 712. Alternatively, light-emitting materials that emit light of different colors may be used for both the light-emitting layer 711 and the light-emitting layer 712. When the light emitted by the light-emitting layer 711 and the light emitted by the light-emitting layer 712 are complementary colors, white light emission is obtained. Figure 32F shows an example in which a colored layer 795 is further provided.

[0335] Furthermore, in Figures 32C, 32D, 32E, and 32F, as shown in Figure 32B, layer 720 and layer 730 may be a laminated structure consisting of two or more layers.

[0336] Furthermore, in Figure 32D, the same light-emitting material may be used for light-emitting layers 711, 712, and 713. Similarly, in Figure 32F, the same light-emitting material may be used for light-emitting layers 711 and 712. In this case, by applying a color conversion layer instead of the colored layer 795, it is possible to obtain light of a desired color different from that of the light-emitting material. For example, by using a blue light-emitting material for each light-emitting layer, blue light can pass through the color conversion layer to obtain light with a longer wavelength than blue (e.g., red, green, etc.). Fluorescent materials, phosphorescent materials, or quantum dots can be used as the color conversion layer.

[0337] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material that makes up the EL layer 790. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0338] A light-emitting device that emits white light preferably has a configuration that includes two or more types of light-emitting materials in its light-emitting layer. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more materials is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices that have three or more light-emitting layers.

[0339] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable to have two or more light-emitting materials, and for each light-emitting material to emit light that contains spectral components of two or more colors from R, G, and B.

[0340] [Light receiving device] Figure 33A shows schematic cross-sectional views of the light-emitting devices 750R, 750G, 750B, and 760. The light-emitting devices 750R, 750G, 750B, and 760 all share a common upper electrode 792 layer.

[0341] Light-emitting device 750R has a pixel electrode 791R, layers 751 and 752, light-emitting layers 753R, 754 and 755, and an upper electrode 792. Light-emitting device 750G has a pixel electrode 791G, layers 751 and 752, light-emitting layers 753G, 754 and 755, and an upper electrode 792. Light-emitting device 750B has a pixel electrode 791B, layers 751 and 752, light-emitting layers 753B, 754 and 755, and an upper electrode 792.

[0342] Layer 751 includes, for example, a layer containing a material with high hole injection properties (hole injection layer). Layer 752 includes, for example, a layer containing a material with high hole transport properties (hole transport layer). Layer 754 includes, for example, a layer containing a material with high electron transport properties (electron transport layer). Layer 755 includes, for example, a layer containing a material with high electron injection properties (electron injection layer).

[0343] Alternatively, the configuration may include layer 751 having an electron injection layer, layer 752 having an electron transport layer, layer 754 having a hole transport layer, and layer 755 having a hole injection layer.

[0344] In Figure 33A, layers 751 and 752 are shown separately, but this is not the only way to represent them. For example, if layer 751 has the functions of both a hole injection layer and a hole transport layer, or if layer 751 has the functions of both an electron injection layer and an electron transport layer, then layer 752 may be omitted.

[0345] Furthermore, the light-emitting layer 753R of the light-emitting device 750R contains a light-emitting material that emits red light, the light-emitting layer 753G of the light-emitting device 750G contains a light-emitting material that emits green light, and the light-emitting layer 753B of the light-emitting device 750B contains a light-emitting material that emits blue light. The light-emitting devices 750G and 750B have a configuration in which the light-emitting layer 753R of the light-emitting device 750R is replaced with the light-emitting layer 753G and light-emitting layer 753B, respectively, and the other configurations are the same as those of the light-emitting device 750R.

[0346] Layers 751, 752, 754, and 755 may have the same configuration (material, film thickness, etc.) for each color of light-emitting device, or they may have different configurations from each other.

[0347] The light-receiving device 760 has a pixel electrode 791PD, layers 761, 762, 763, and an upper electrode 792. The light-receiving device 760 can be configured without a hole injection layer and an electron injection layer.

[0348] Layer 762 has an active layer (also called a photoelectric conversion layer). Layer 762 has the function of absorbing light in a specific wavelength band and generating carriers (electrons and holes).

[0349] Layers 761 and 763 each have, for example, either a hole transport layer or an electron transport layer. If layer 761 has a hole transport layer, then layer 763 has an electron transport layer. Conversely, if layer 761 has an electron transport layer, then layer 763 has a hole transport layer.

[0350] Furthermore, the light-receiving device 760 may have the pixel electrode 791PD as the anode and the upper electrode 792 as the cathode, or the pixel electrode 791PD as the cathode and the upper electrode 792 as the anode.

[0351] Figure 33B is a modified example of Figure 33A. Figure 33B shows an example in which layer 755 is provided in common between each light-emitting device and between each photodetector, similar to the upper electrode 792. In this case, layer 755 can be called a common layer. By providing one or more common layers between each light-emitting device and between each photodetector in this way, the manufacturing process can be simplified, and thus manufacturing costs can be reduced.

[0352] Here, layer 755 functions as an electron injection layer or hole injection layer for the light-emitting device 750R, etc. At the same time, it functions as an electron transport layer or hole transport layer for the photodetector 760. Therefore, the photodetector 760 shown in Figure 33B does not need to have a layer 763 that functions as an electron transport layer or hole transport layer.

[0353] [Light-emitting devices] Here, we will describe a specific example of the configuration of a light-emitting device.

[0354] The light-emitting device has at least a light-emitting layer. The light-emitting device may also have layers other than the light-emitting layer that include a material with high hole injection properties, a material with high hole transport properties, a hole-blocking material, a material with high electron transport properties, an electron-blocking material, a material with high electron injection properties, an electron-blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0355] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0356] For example, a light-emitting device can have a configuration that includes one or more layers from among a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0357] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0358] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0359] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0360] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0361] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0362] Alternatively, an electron-transporting material may be used as the electron injection layer described above. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0363] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) level of organic compounds containing lone pairs of electrons is between -3.6 eV and -2.3 eV. In addition, the highest occupied molecular orbital (HOMO) level and LUMO level of organic compounds can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0364] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0365] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0366] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0367] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0368] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0369] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0370] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0371] [Light receiving device] The active layer of a light-receiving device includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0372] As for the n-type semiconductor material of the active layer, fullerene (for example, C 60 , C 70, etc.), and electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes have a shape similar to a soccer ball, and this shape is energetically stable. Fullerenes have both deep (low) HOMO levels and LUMO levels. Since fullerenes have deep LUMO levels, their electron acceptability (acceptor property) is extremely high. Normally, like benzene, when π-electron conjugation (resonance) spreads in a plane, the electron donating property (donor property) increases. However, since fullerene has a spherical shape, it has high electron acceptability despite the extensive spread of π-electron conjugation. High electron acceptability causes charge separation to occur rapidly and efficiently, which is beneficial for light-receiving devices. C 60 , C 70 both have broad absorption bands in the visible light region, and in particular C 70 is C 60 is preferred because it has a larger π-electron conjugated system and has a broad absorption band also in the long-wavelength region, as compared with . Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviation: PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviation: PC60BM), 1’,1’’,4’,4’’-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2’,3’,56,60:2’’,3’’][5,6]fullerene-C60 (abbreviation: ICBA), and the like.

[0373] Further, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0374] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone.

[0375] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indrocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0376] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0377] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0378] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0379] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, it may also further include layers containing a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, an electron blocking material, etc.

[0380] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0381] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0382] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0383] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0384] The above is a description of the light-receiving device.

[0385] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments.

[0386] (Embodiment 6) This embodiment describes an example of the configuration of a display device that can be used in a display device according to one aspect of the present invention.

[0387] Furthermore, the display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, smartphones, smartwatches, tablet devices, personal digital assistants, and audio playback devices.

[0388] Figure 34A shows examples of cross-sections of the display device 100 shown in Figure 2, when a portion of the area including the FPC 112, a portion of the circuit 115, a portion of the display unit 111, and a portion of the area including the connection portion are cut. In Figure 34A, an example of a cross-section is shown when a portion of the display unit 111, specifically the area including the light-emitting device 430b that emits green light (G) and the light-receiving device 440 that receives reflected light (L), is cut.

[0389] The display device 100 shown in Figure 34A includes transistors 252, 260, 258, a light-emitting device 430b, and a light-receiving device 440, etc., between substrates 110 and 120. If the display device 100 does not have a light-receiving device, a light-emitting device is provided in the position of the light-receiving device 440.

[0390] The light-emitting device 430b and the light-receiving device 440 can be replaced with light-emitting devices or light-receiving devices exemplified in other embodiments.

[0391] Here, if the pixels of the display device have three types of subpixels, each having a light-emitting device that emits a different color from the others, examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of these four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y. Alternatively, the subpixels may be equipped with a light-emitting device that emits infrared light.

[0392] Furthermore, the light-receiving device 440 can be a photoelectric conversion element sensitive to light in the red, green, or blue wavelength range, or a photoelectric conversion element sensitive to light in the infrared wavelength range.

[0393] The substrate 120 and layer 151 are bonded together via an adhesive layer 442. Layer 151 is provided with a conductive layer 131 that functions as an antenna in a position that does not overlap with the light-emitting device or the light-receiving device. In some cases, a conductive layer 132 (see Figure 7A) that does not function as an antenna may be provided in the same position. The adhesive layer 442 is provided in overlap with the light-emitting device 430b and the light-receiving device 440 via layer 151 and the planarization film 322, and a solid encapsulation structure is applied to the display device 100. The substrate 120 is provided with a light-shielding layer 417.

[0394] The light-emitting device 430b and the light-receiving device 440 have conductive layers 411a, 411b, and 411c as pixel electrodes. Conductive layer 411b is reflective to visible light and functions as a reflective electrode. Conductive layer 411c is transparent to visible light and functions as an optical adjustment layer.

[0395] The conductive layer 411a of the light-emitting device 430b is connected to the conductive layer 272b of the transistor 260 through an opening provided in the insulating layer 264. The transistor 260 has the function of controlling the driving of the light-emitting device. On the other hand, the conductive layer 411a of the light-receiving device 440 is electrically connected to the conductive layer 272b of the transistor 258. The transistor 258 has the function of controlling the exposure timing using the light-receiving device 440.

[0396] An EL layer 412G or a photoelectric conversion layer 412S is provided covering the pixel electrodes. An insulating layer 421 is provided in contact with the sides of the EL layer 412G and the photoelectric conversion layer 412S, and a resin layer 422 is provided to fill the recesses of the insulating layer 421. An organic layer 414, a common electrode 413, and a protective layer 416 are provided covering the EL layer 412G and the photoelectric conversion layer 412S. By providing a protective layer 416 that covers the light-emitting device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and improve the reliability of the light-emitting device.

[0397] The light G emitted by the light-emitting device 430b is emitted towards the substrate 120. The light-receiving device 440 receives the light L incident through the substrate 120 and converts it into an electrical signal. It is preferable to use a material with high transmittance to visible light for the substrate 120.

[0398] Furthermore, if the light-emitting device emits white light, a color filter 418 that converts light C to a desired color can be provided so as to overlap with the light-emitting device 430c that emits white light (light W), as shown in Figure 34B. However, if white light is emitted towards the substrate 120, the color filter 418 may be unnecessary. In Figure 34B, an example is shown in which the color filter 418 is formed in contact with the substrate 120, but it may also be provided on or within layer 151, or on the protective layer 416.

[0399] Transistors 252, 260, and 258 are all formed on the substrate 110 via an insulating layer 262. These transistors can be manufactured using the same materials and processes.

[0400] Furthermore, transistors 252, 260, and 258 may be manufactured to have different configurations. For example, transistors may be manufactured with or without a back gate, or transistors may be manufactured with different materials or thicknesses for the semiconductor, gate electrode, gate insulating layer, source electrode, and drain electrode, or both.

[0401] A connection portion 254 is provided in the region of substrate 110 that does not overlap with substrate 120. At the connection portion 254, wiring 465 is electrically connected to FPC 112 via a conductive layer 466 and a connecting layer 292. The conductive layer 466 can be obtained by processing the same conductive film as the pixel electrode. This allows the connection portion 254 and FPC 112 to be electrically connected via the connecting layer 292.

[0402] Transistors 252, 260, and 258 each have a conductive layer 271 that functions as a gate, an insulating layer 261 that functions as a gate insulating layer, a semiconductor layer 281 having a channel-forming region 281i and a pair of low-resistance regions 281n, a conductive layer 272a connected to one of the pair of low-resistance regions 281n, a conductive layer 272b connected to the other of the pair of low-resistance regions 281n, an insulating layer 275 that functions as a gate insulating layer, a conductive layer 273 that functions as a gate, and an insulating layer 265 covering the conductive layer 273. The insulating layer 261 is located between the conductive layer 271 and the channel-forming region 281i. The insulating layer 275 is located between the conductive layer 273 and the channel-forming region 281i.

[0403] The conductive layer 272a and the conductive layer 272b are each connected to the low-resistance region 281n via openings provided in the insulating layer 265. Of the conductive layer 272a and the conductive layer 272b, one functions as a source and the other functions as a drain.

[0404] Figure 34A shows an example in which the insulating layer 275 covers the top and sides of the semiconductor layer. The conductive layer 272a and conductive layer 272b are connected to the low-resistance region 281n through openings provided in the insulating layer 275 and insulating layer 265, respectively.

[0405] On the other hand, in the transistor 259 shown in Figure 34C, the insulating layer 275 overlaps with the channel formation region 281i of the semiconductor layer 281, but does not overlap with the low-resistance region 281n. For example, the structure shown in Figure 34C can be fabricated by processing the insulating layer 275 using the conductive layer 273 as a mask. In Figure 34C, an insulating layer 265 is provided covering the insulating layer 275 and the conductive layer 273, and the conductive layers 272a and 272b are connected to the low-resistance region 281n, respectively, through openings in the insulating layer 265. Furthermore, an insulating layer 268 covering the transistor may also be provided.

[0406] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0407] Transistors 252, 260, and 258 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other.

[0408] The crystallinity of the semiconductor material used in the semiconductor layer of the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0409] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0410] The band gap of the metal oxide used in the semiconductor layer of the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide with a large band gap, the off-current of the OS transistor can be reduced. For example, the off-current value of an OS transistor per 1 μm of channel width at room temperature is 1 aA (1 × 10⁻¹⁶). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0411] The metal oxide preferably contains at least indium or zinc, and more preferably indium and zinc. For example, the metal oxide preferably contains indium, M (where M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc. In particular, M is preferably one or more selected from gallium, aluminum, yttrium, and tin, and gallium is more preferred. A metal oxide containing indium, M, and zinc may hereafter be referred to as In-M-Zn oxide.

[0412] When the metal oxide is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio. By increasing the atomic ratio of indium in a metal oxide, the on-current or field-effect mobility of a transistor can be increased.

[0413] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0414] Furthermore, the atomic ratio of In in an In-M-Zn oxide may be less than the atomic ratio of M. Examples of such atomic ratios of metal elements in an In-M-Zn oxide include compositions where In:M:Zn = 1:3:2 or close to it, In:M:Zn = 1:3:3 or close to it, In:M:Zn = 1:3:4 or close to it, etc. By increasing the atomic ratio of M in the metal oxide, it is possible to increase the band gap of the In-M-Zn oxide and improve its resistance to photo-negative bias stress testing. Specifically, it is possible to reduce the change in threshold voltage or the change in shift voltage (Vsh) measured in the NBTIS (Negative Bias Temperature Illumination Stress) test of a transistor. Note that the shift voltage (Vsh) is defined as the Vg at which the tangent line at the point where the slope of the drain current (Id)-gate voltage (Vg) curve is maximum intersects the straight line where Id = 1 pA.

[0415] By configuring the display device to have OS transistors and light-emitting devices with an MML (metal maskless) structure, the leakage current that can flow through the transistors and the leakage current that can flow between adjacent light-emitting elements (also called lateral leakage current or side leakage current) can be made extremely low. Furthermore, with this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, high saturation, and high contrast ratio. Moreover, by configuring the device to have extremely low leakage currents that can flow through the transistors and lateral leakage currents between light-emitting elements, it is possible to achieve a display (also called true black display) with virtually no light leakage (so-called white floating) that can occur when displaying black.

[0416] In particular, among light-emitting devices with an MML structure, applying the SBS structure described above results in a configuration where the layer provided between light-emitting elements (for example, an organic layer used in common between light-emitting elements, also called a common layer) is separated, making it possible to achieve a display with no side leakage or extremely low side leakage.

[0417] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. As a result, by using an OS transistor as the drive transistor in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0418] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting device. This allows for a wider range of tonal gradations in the pixel circuit.

[0419] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, for example, a stable current can be supplied to a light-emitting device even if there are variations in the current-voltage characteristics of the light-emitting device containing EL material. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0420] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0421] Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (such as low-temperature polysilicon (also known as LTPS) and single-crystal silicon).

[0422] Low-temperature polysilicon (LTPS) in particular has relatively high mobility and can be formed on glass substrates, making it suitable for use in display devices. For example, transistors using low-temperature polysilicon (LTPS) as the semiconductor layer can be applied to transistors 252 in the drive circuit, while transistors using oxide semiconductors as the semiconductor layer can be applied to transistors 260 and 258 provided in the pixels. By using both LTPS transistors and OS transistors, a display panel with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO.

[0423] Alternatively, the semiconductor layer of a transistor may have a layered material that functions as a semiconductor. A layered material is a general term for a group of materials having a layered crystalline structure. A layered crystalline structure is a structure in which layers formed by covalent or ionic bonds are stacked via weaker bonds than covalent or ionic bonds, such as van der Waals forces. Layered materials have high electrical conductivity within a unit layer, that is, high two-dimensional electrical conductivity. By using a material that functions as a semiconductor and has high two-dimensional electrical conductivity in the channel formation region, a transistor with a large on-current can be provided.

[0424] Examples of the above-mentioned layered materials include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing chalcogens (elements belonging to Group 16). Examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Specific examples of transition metal chalcogenides applicable as semiconductor layers in transistors include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum tellurium (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten tellurium (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0425] The transistors in circuit 115 and the transistors in the display unit 111 may have the same structure or different structures. The structures of the multiple transistors in circuit 115 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in the display unit 111 may all be the same or there may be two or more different structures.

[0426] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0427] It is preferable to use an inorganic insulating film for insulating layers 261, 262, 265, 268, and 275. Examples of inorganic insulating films that can be used include silicon nitride, silicon oxide nitride, silicon oxide, silicon nitride, aluminum oxide, and aluminum nitride. Alternatively, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used. Furthermore, two or more of the above-mentioned inorganic insulating films may be laminated together.

[0428] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100. This prevents impurities from entering through the organic insulating film from the edge of the display device 100. Alternatively, the organic insulating film may be formed so that its edge is inside the edge of the display device 100, so that the organic insulating film is not exposed at the edge of the display device 100.

[0429] An organic insulating film is preferred for the insulating layer 264, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0430] It is preferable to provide a light-shielding layer 417 on the surface of the substrate 120 that faces the substrate 110. In addition, various optical components can be arranged on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be arranged on the outside of the substrate 120.

[0431] Figure 34A shows the connection section 278. At the connection section 278, the common electrode 413 and the wiring are electrically connected. Figure 34A shows an example where the same stacked structure as the pixel electrode is applied to the wiring.

[0432] Substrates 110 and 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using flexible materials for substrates 110 and 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 110 or substrate 120. If a flexible material is used for substrate 110, an adhesive layer may be provided between substrate 110 and the insulating layer 262.

[0433] As substrates 110 and 120, the following can be used: polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. Glass of a thickness sufficient to provide flexibility may be used for one or both of substrates 110 and 120.

[0434] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0435] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0436] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic resin film.

[0437] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0438] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0439] As the connecting layer 292, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0440] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0441] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes that constitute a display device, and as conductive layers (conductive layers that function as pixel electrodes or common electrodes) in light-emitting devices.

[0442] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0443] The configuration shown in Figure 34A is particularly suitable for use in a range of devices, from small display devices used in information terminals such as smartphones to large display devices used in televisions or digital signage. For example, it can be used for display devices with screen sizes ranging from approximately 2 inches diagonally to 100 inches.

[0444] One aspect of the present invention can also be applied to even smaller display devices. For example, it can be applied to small display devices with a diagonal size smaller than 2 inches, used in glasses-type or goggle-type electronic devices that support virtual reality (VR) or augmented reality (AR).

[0445] Figure 35A is a schematic diagram of a display device 105, which is an example of the above-mentioned small display device, and Figure 35B is an unfolded view thereof. The display device 105 has a layer 70 between a substrate 60 and a substrate 120. The substrate 60 is a semiconductor substrate such as a single-crystal silicon substrate, and the substrate 60 can be provided with a circuit 295 having one or more circuits such as a pixel circuit, a pixel driving circuit, a memory circuit, or a central processing unit. The layer 70 can be provided with a pixel circuit and display element that constitute the display unit 111, as well as a conductive layer 131 that acts as an antenna according to one aspect of the present invention.

[0446] Figure 35C shows an example of the configuration of the display device 105. Figure 36C is a cross-sectional view of the region shown by A1-A2 in Figure 36B. Elements common to Figure 34A are given the same reference numerals and their descriptions are omitted. The substrate 60 has Si transistors 296 for forming the circuit 295. The layer 70 has OS transistors and display elements that form the pixel circuit, as well as an antenna, etc.

[0447] In this way, by stacking the substrate 60 and the layer 70, the pixel circuit and the circuit 295 including the drive circuit can be stacked and provided, thus enabling the formation of a narrow-bezel display device. Furthermore, this configuration allows for shorter wiring connecting the pixel circuit and the drive circuit, thereby reducing wiring resistance and wiring capacitance, and enabling the formation of a high-speed, low-power display device.

[0448] As shown in Figure 35D, the OS transistor may not be provided in layer 70. In this case, the display element and antenna may be provided in layer 70, and the Si transistor 297 that forms the pixel circuit may be provided on the substrate 60.

[0449] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments.

[0450] (Embodiment 7) This embodiment describes an example of a display device having a light-receiving device, etc., according to one aspect of the present invention.

[0451] In the display device of this embodiment, each pixel can be configured to have multiple subpixels, each having a light-emitting device that emits a different color from the others. For example, a pixel can be configured to have three types of subpixels. Examples of these three subpixels include subpixels of three colors: red (R), green (G), and blue (B); or subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Alternatively, a pixel can be configured to have four types of subpixels. Examples of these four subpixels include subpixels of four colors: red, green, blue, and white (W); or subpixels of four colors: red, green, blue, and yellow.

[0452] There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0453] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. The top surface shape of a sub-pixel referred to here corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device.

[0454] In a display device having light-emitting and light-receiving devices in its pixels, the pixels have a light-receiving function, allowing for the detection of contact or proximity of an object while displaying an image. For example, not only can the display device display an image using all of its subpixels, but some subpixels can also emit light as a light source while the remaining subpixels display an image.

[0455] The pixels shown in Figures 36A, 36B, and 36C have sub-pixels G, B, R, and PS.

[0456] The pixels shown in Figure 36A have a stripe array applied. The pixels shown in Figure 36B have a matrix array applied.

[0457] The pixel arrangement shown in Figure 36C has a configuration in which three subpixels (subpixel R, subpixel G, and subpixel S) are arranged vertically next to one subpixel (subpixel B).

[0458] The pixels shown in Figures 36D, 36E, and 36F have sub-pixels G, B, R, IR, and PS.

[0459] Figures 36D, 36E, and 36F show examples where a single pixel spans two rows. The upper row (first row) has three subpixels (subpixel G, subpixel B, and subpixel R), while the lower row (second row) has two subpixels (one subpixel PS and one subpixel IR).

[0460] Figure 36D shows a configuration where three vertically elongated sub-pixels G, B, and R are arranged horizontally, with a sub-pixel PS and a horizontally elongated sub-pixel IR arranged horizontally below them. Figure 36E shows a configuration where two horizontally elongated sub-pixels G and R are arranged vertically, with a vertically elongated sub-pixel B next to them, and a horizontally elongated sub-pixel IR and a vertically elongated sub-pixel PS arranged horizontally below them. Figure 36F shows a configuration where three vertically elongated sub-pixels R, G, and B are arranged horizontally, with a horizontally elongated sub-pixel IR and a vertically elongated sub-pixel PS arranged horizontally below them. Figures 36E and 36F show the case where the area of ​​sub-pixel IR is the largest, and the area of ​​sub-pixel PS is about the same as that of the sub-pixels.

[0461] Note that the layout of the subpixels is not limited to the configuration shown in Figures 36A to 36F.

[0462] Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light. Sub-pixel IR has a light-emitting device that emits infrared light. Sub-pixel PS has a light-receiving device. The wavelength of light detected by sub-pixel PS is not particularly limited, but it is preferable that the light-receiving device of sub-pixel PS is sensitive to the light emitted by the light-emitting devices of sub-pixel R, sub-pixel G, sub-pixel B, or sub-pixel IR. For example, it is preferable to detect one or more of the wavelengths of light in the blue, violet, blue-violet, green, yellow-green, yellow, orange, and red ranges, and the infrared wavelength range.

[0463] The light-receiving area of ​​a sub-pixel PS is smaller than the light-emitting area of ​​other sub-pixels. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS enables high-definition or high-resolution imaging. For example, sub-pixel PS can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0464] Furthermore, the sub-pixel PS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). For example, it is preferable for the sub-pixel PS to detect infrared light. This enables touch detection even in dark places.

[0465] Here, a touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with the display device. A near-touch sensor can detect an object even if it does not come into contact with the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the display device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the display device becoming dirty or scratched can be reduced, or it becomes possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0466] Furthermore, in order to perform high-resolution imaging, it is preferable that sub-pixels PS be provided on all pixels of the display device. On the other hand, when sub-pixels PS are used in touch sensors or near-touch sensors, the accuracy required is not as high as when capturing fingerprints, so it is sufficient to provide them on only some of the pixels of the display device. The detection speed can be increased by reducing the number of sub-pixels PS in the display device to fewer than the number of sub-pixels R, etc.

[0467] Furthermore, the display device may have a function to vary the refresh rate. For example, the refresh rate can be adjusted according to the content displayed on the display device (for example, within a range of 0.01 Hz to 240 Hz) to reduce power consumption. Also, a drive that reduces the power consumption of the display device by driving with a reduced refresh rate may be called an idling stop (IDS) drive.

[0468] Furthermore, the drive frequency of the touch sensor or near-touch sensor may be changed according to the refresh rate mentioned above. For example, if the refresh rate of the display device is 120Hz, the drive frequency of the touch sensor or near-touch sensor can be set to a frequency higher than 120Hz (typically 240Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near-touch sensor.

[0469] Figure 36G shows an example of a pixel circuit for a sub-pixel having a light-receiving device, and Figure 36H shows an example of a pixel circuit for a sub-pixel having a light-emitting device.

[0470] The pixel circuit PIX1 shown in Figure 36G includes a light-receiving device PD, transistors M11, M12, M13, M14, and a capacitive element C2. Here, an example is shown in which a photodiode is used as the light-receiving device PD.

[0471] The light-receiving device PD has its anode electrically connected to wiring V1 and its cathode electrically connected to either the source or drain of transistor M11. Alternatively, the cathode may be electrically connected to wiring V1 and the anode electrically connected to either the source or drain of transistor M11.

[0472] Transistor M11 has its gate electrically connected to wiring TX, and its other source or drain electrically connected to one electrode of capacitive element C2, one source or drain of transistor M12, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RES, and its other source or drain electrically connected to wiring V2. Transistor M13 has its one source or drain electrically connected to wiring V3, and its other source or drain electrically connected to one source or drain of transistor M14. Transistor M14 has its gate electrically connected to wiring SE, and its other source or drain electrically connected to wiring OUT1.

[0473] A constant potential is supplied to wiring V1, wiring V2, and wiring V3, respectively. When the anode of the photodetector PD is electrically connected to wiring V1, and the photodetector PD is driven with reverse bias, a potential higher than that of wiring V1 is supplied to wiring V2. When the cathode of the photodetector PD is electrically connected to wiring V1, and the photodetector PD is driven with reverse bias, a potential higher than that of wiring V2 is supplied to wiring V1.

[0474] Transistor M12 is controlled by a signal supplied to wiring RES and has the function of resetting the potential of the node connected to the gate of transistor M13 to the potential supplied to wiring V2. Transistor M11 is controlled by a signal supplied to wiring TX and has the function of controlling the timing at which the potential of the above node changes according to the current flowing through the photodetector PD. Transistor M13 functions as an amplifying transistor that provides an output according to the potential of the above node. Transistor M14 is controlled by a signal supplied to wiring SE and functions as a selection transistor for reading the output according to the potential of the above node by an external circuit connected to wiring OUT1.

[0475] The pixel circuit PIX2 shown in Figure 36H includes a light-emitting device EL, transistors M15, M16, M17, and a capacitive element C3. Here, an example using a light-emitting diode as the light-emitting device EL is shown. In particular, it is preferable to use an organic EL element as the light-emitting device EL.

[0476] Transistor M15 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitive element C3 and the gate of transistor M16. One of the source or drain of transistor M16 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting device EL and one of the source or drain of transistor M17. Transistor M17 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting device EL is electrically connected to wiring V5.

[0477] Constant potentials are supplied to wirings V4 and V5, respectively. This allows the anode side of the light-emitting device EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M15 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit PIX2. Transistor M16 also functions as a drive transistor that controls the current flowing to the light-emitting device EL according to the potential supplied to its gate. When transistor M15 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M16, and the luminescence brightness of the light-emitting device EL can be controlled according to that potential. Transistor M17 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M16 and the light-emitting device EL to the outside via wiring OUT2.

[0478] Here, it is preferable to apply transistors to which the semiconductor layer in which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M11, M12, M13, and M14 in the pixel circuit PIX1, and transistors M15, M16, and M17 in the pixel circuit PIX2.

[0479] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge accumulated in the capacitive element connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use transistors made of oxide semiconductors, particularly for transistors M11, M12, and M15 connected in series with capacitive element C2 or C3. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0480] Furthermore, transistors M11 to M17 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0481] Alternatively, a configuration may be used in which one or more transistors among transistors M11 to M17 have oxide semiconductors applied, and the others have silicon applied.

[0482] Note that in Figures 36G and 36H, the transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0483] It is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be formed side by side on the same substrate. In particular, it is preferable to configure the transistors in pixel circuit PIX1 and pixel circuit PIX2 to be mixed within a single region and arranged periodically.

[0484] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitive elements in a position that overlaps with the light-receiving device PD or light-emitting device EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0485] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments.

[0486] (Embodiment 8) In this embodiment, a touch panel configuration that can be applied to a display device according to one aspect of the present invention will be described with reference to Figure 37.

[0487] Figure 37 is a top view of the touch panel 500. For clarity, Figure 37 shows representative components. In Figure 37, the conductive layer is shown as an electrode with hatching, but, as with Figure 7A, each conductive layer has an opening in the region that overlaps with the pixel. Therefore, the conductive layer shown in Figure 37 is translucent.

[0488] In addition to the conductive layer 131 that functions as the antenna 130 described in Embodiment 1, the touch panel 500 includes, as an example, conductive layers X1 to X3 that function as electrodes provided in the X direction, and conductive layers Y1 to Y3 that function as electrodes provided in the Y direction.

[0489] The conductive layers X1 to X3 and conductive layers Y1 to Y3 are arranged to fill the spaces between the antennas 131, which function as antennas 130 and are provided at equal intervals. This configuration reduces the area of ​​regions where conductive layers are not provided, reduces unevenness in transmittance, and allows the substrate 120 to be equipped with touch sensor functionality. Since the frequency of the signals used by the touch sensor is different from the frequency of the signals used in wireless communication, the signals can be separated.

[0490] As shown in Figure 37, multiple conductive layers that function as antennas can be placed between conductive layers X1 to X3 and conductive layers Y1 to Y3 that function as electrodes for the touch panel. Therefore, antennas of different shapes or sizes can be placed. This allows for a configuration that transmits and receives wireless signals of different frequencies. Furthermore, since multiple antennas of the same shape and size can be placed, beamforming technology using antennas arranged in an array can be applied. Because beamforming technology can provide antenna directivity, it is possible to compensate for radio wave propagation loss when the communication frequency is high.

[0491] Note that while Figure 37 illustrates a configuration in which the conductive layer 131 is arranged regularly in a square shape, the design is not limited to this. For example, the conductive layer 131 may be circular, triangular, pentagonal, hexagonal, octagonal, or other shapes.

[0492] The conductive layers X1 to X3 and Y1 to Y3, which function as electrodes for a touch panel, function as electrodes for a capacitive touch sensor, for example. Capacitive touch sensors include surface-type and projected-type. Projected-type capacitive touch sensors include self-capacitance and mutual-capacitance types, mainly due to differences in the driving method. Mutual-capacitance types are preferred because they enable simultaneous multi-point detection.

[0493] In the projected self-capacitance method, a pulse voltage is applied to each of the conductive layers X1 to X3 and conductive layers Y1 to Y3 in a scanning manner, and the value of the current flowing through them at that time is detected. When the object to be detected approaches, the magnitude of this current changes, and by detecting this difference, the position information of the object to be detected can be obtained. In the projected mutual capacitance method, a pulse voltage is applied to either the conductive layers X1 to X3 or the conductive layers Y1 to Y3 in a scanning manner, and the position information of the object to be detected is obtained by detecting the current flowing through the other layer.

[0494] Furthermore, it is preferable that the intersections of conductive layers X1 to X3 and conductive layers Y1 to Y3 are connected via a conductive layer provided in another layer. It is also preferable that the area of ​​the intersections of conductive layers X1 to X3 and conductive layers Y1 to Y3 be as small as possible.

[0495] In the projected self-capacitance method, a pulse voltage is applied to each of the conductive layers X1 to X3 and conductive layers Y1 to Y3 in a scanning manner, and the value of the current flowing through them at that time is detected. When an object to be detected approaches, the magnitude of this current changes, and by detecting this difference, the position information of the object to be detected can be obtained. In the projected mutual capacitance method, a pulse voltage is applied to either conductive layer X1 to X3 or conductive layer Y1 to Y3 in a scanning manner, and the position information of the object to be detected can be obtained by detecting the current flowing through the other layer.

[0496] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments.

[0497] (Embodiment 9) In this embodiment, an example of an electronic device equipped with the above-mentioned display device will be described using Figures 38A to 38F.

[0498] Electronic devices using a display device according to one aspect of the present invention include televisions, monitors and other display devices, lighting devices, desktop or notebook personal computers, word processors, and DVDs (Digital Versatile). Examples include image playback devices that play still images or videos stored on recording media such as discs, portable CD players, radios, tape recorders, headphone stereos, stereos, desk clocks, wall clocks, cordless telephone handsets, transceivers, mobile phones, car phones, portable game consoles, tablet terminals, large game machines such as pachinko machines, calculators, portable information terminals (also called "portable information terminals"), electronic organizers, e-book readers, electronic translators, voice input devices, video cameras, digital still cameras, electric shavers, high-frequency heating devices such as microwave ovens, electric rice cookers, electric washing machines, electric vacuum cleaners, water heaters, electric fans, hair dryers, air conditioning equipment such as air conditioners, humidifiers, and dehumidifiers, dishwashers, dish dryers, clothes dryers, futon dryers, electric refrigerators, electric freezers, electric refrigerator-freezers, DNA storage freezers, flashlights, tools such as chainsaws, smoke detectors, and medical equipment such as dialysis machines. Furthermore, examples of industrial equipment include emergency lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage systems, power leveling systems, and energy storage devices for smart grids.

[0499] Furthermore, mobile devices propelled by electric motors using electricity from energy storage devices are also included in the category of electronic equipment. Examples of such mobile devices include electric vehicles (EVs), hybrid vehicles (HVs) that combine internal combustion engines and electric motors, plug-in hybrid vehicles (PHVs), tracked vehicles in which the tires and wheels of these vehicles are replaced with tracks, motorized bicycles including electric assist bicycles, motorcycles, electric wheelchairs, golf carts, small or large vessels, submarines, helicopters, aircraft, rockets, artificial satellites, space probes, planetary probes, and spacecraft.

[0500] A display device according to one aspect of the present invention can be used in display units and communication devices built into these electronic devices.

[0501] Electronic devices may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0502] Electronic devices can have a variety of functions. For example, they can have functions to display various information (still images, videos, text images, etc.) on a display unit, touch panel functions, functions to display calendars, dates or times, functions to run various software (programs), wireless communication functions, and functions to read programs or data recorded on recording media.

[0503] Figures 38A to 38F show examples of electronic devices.

[0504] Figure 38A shows an example of a wristwatch-type personal information terminal. The personal information terminal 6100 comprises a housing 6101, a display unit 6102, a band 6103, operation buttons 6105, etc. By using a display device according to one aspect of the present invention as the display unit 6102, the personal information terminal 6100 can be miniaturized.

[0505] Figure 38B shows an example of a mobile phone. The personal information terminal 6200 includes a display unit 6202 built into the housing 6201, as well as operation buttons 6203, a speaker 6204, a microphone 6205, and the like.

[0506] Furthermore, the personal information terminal 6200 is equipped with a fingerprint sensor 6209 in an area overlapping with the display unit 6202. The fingerprint sensor 6209 may also be an organic light sensor. Since fingerprints are unique to each individual, the fingerprint sensor 6209 can acquire a fingerprint pattern to perform personal authentication. Light emitted from the display unit 6202 can be used as a light source for acquiring the fingerprint pattern with the fingerprint sensor 6209.

[0507] By using a display device according to one aspect of the present invention as the display unit 6202, the portable information terminal 6200 can be miniaturized.

[0508] Figure 38C shows an example of a cleaning robot. The cleaning robot 6300 has a display unit 6302 located on the top surface of the housing 6301, multiple cameras 6303 located on the sides, a brush 6304, operation buttons 6305, and various sensors. Although not shown, the cleaning robot 6300 is equipped with wheels, a suction port, etc. The cleaning robot 6300 is self-propelled, can detect dirt 6310, and can suck up the dirt from a suction port located on the bottom surface.

[0509] For example, the cleaning robot 6300 can analyze images captured by the camera 6303 to determine the presence or absence of obstacles such as walls, furniture, or steps. Furthermore, if the image analysis detects an object that may become entangled in the brush 6304, such as wiring, the rotation of the brush 6304 can be stopped. By using a display device according to one aspect of the present invention as the display unit 6302, the cleaning robot 6300 can be miniaturized.

[0510] Figure 38D shows an example of a robot. The robot 6400 shown in Figure 38D includes a computing unit 6409, an illuminance sensor 6401, a microphone 6402, an upper camera 6403, a speaker 6404, a display unit 6405, a lower camera 6406, an obstacle sensor 6407, and a movement mechanism 6408.

[0511] Microphone 6402 has the function of detecting the user's voice and ambient sounds. Speaker 6404 has the function of emitting sound. Robot 6400 can communicate with the user using microphone 6402 and speaker 6404.

[0512] The display unit 6405 has the function of displaying various types of information. The robot 6400 can display the information desired by the user on the display unit 6405. The display unit 6405 may be equipped with a touch panel. The display unit 6405 may also be a detachable information terminal, and by installing it in a fixed position on the robot 6400, charging and data transfer can be made possible.

[0513] The display unit 6405 also includes an illuminance sensor, a camera, and operation buttons, and can be operated by touch using a stylus pen or similar device. The functions of the display unit 6405 include voice calls, video calls, email, a notebook, internet connectivity, and music playback.

[0514] The upper camera 6403 and the lower camera 6406 have the function of imaging the area around the robot 6400. In addition, the obstacle sensor 6407 can detect the presence or absence of obstacles in the direction of travel when the robot 6400 moves forward using the movement mechanism 6408. The robot 6400 can recognize its surrounding environment and move safely using the upper camera 6403, the lower camera 6406 and the obstacle sensor 6407. The light-emitting device according to one aspect of the present invention can be used in the display unit 6405.

[0515] By using a display device according to one aspect of the present invention as the display unit 6405, the robot 6400 can be miniaturized.

[0516] Figure 38E shows an example of a television receiver. The television receiver 6500 shown in Figure 38E includes a housing 6501, a display unit 6502, and a speaker 6503, among other things.

[0517] By using a display device according to one aspect of the present invention in the display unit 6502, the television receiver 6500 can be miniaturized.

[0518] Figure 38F shows an example of an automobile. The automobile 7160 has an engine, tires, brakes, steering system, camera, etc. The automobile 7160 is equipped with a display device according to one aspect of the present invention. By using the display device according to one aspect of the present invention in the automobile 7160, the automobile 7160 can function as an IoT device and the display device can be miniaturized.

[0519] Next, an example of an electronic device equipped with a foldable display device will be described with reference to Figures 39A and 39B. An electronic device 400 equipped with a display device according to one aspect of the present invention has a display device comprising regions 401A, 401B, and 401C within a housing 402, as shown in Figure 39A. Regions 401B and 401C are foldable display devices and can be housed within the housing 402 in a folded shape, and therefore can be provided in a bent portion.

[0520] Figure 39B is a cross-sectional view of the electronic device 400 shown in Figure 39A along the line X1-X2. As shown in Figure 39B, the electronic device 400 houses a display device having bent substrates 110 and 120 within a housing 402. The housing 402 also contains a substrate 140 connected to the display device. The housing 402 protects the display device and the like from external stresses.

[0521] Areas 401A, 401B, and 401C, which correspond to the display area, can be placed not only in the flat area of ​​the housing 402 but also in the curved area. As described in Embodiment 1 above, a conductive layer that functions as an antenna can be placed in the display area. Therefore, the area on which the conductive layer that functions as an antenna is placed can be increased.

[0522] Furthermore, an example of an electronic device equipped with a foldable display device different from those shown in Figures 39A and 39B will be described with reference to Figure 39C. An electronic device 400A equipped with a display device according to one aspect of the present invention has a display device 401 housed in a foldable housing 402, as shown in Figure 39C. Since both the housing 402 and the display device 401 are foldable display devices, the electronic device can be made foldable.

[0523] As shown in Figure 39C, the electronic device 400A has substrates 110 and 120 provided along the housing 402. The display device 401 can be provided regardless of the shape of the electronic device 400A. Therefore, the area for placing the conductive layer that functions as an antenna can be increased. The configuration of the electronic device in Figure 39C allows for a deformable configuration.

[0524] Figures 40A to 40C illustrate electronic equipment different from that shown in Figures 39A to 39C. The electronic equipment 400B shown in Figures 40A to 40C illustrates a configuration in which the housing and display device are modified for use.

[0525] The electronic device 400B shown in Figure 40A can be transformed from the shape shown in Figure 40B to the shape shown in Figure 40C, thereby increasing or decreasing the display area of ​​the display device. This allows for adjustment of the number of conductive layers that function as antennas, which are arranged on the substrate of the display device. For example, the reception sensitivity can be increased when the device is in tablet form compared to when it is folded. Therefore, electronic devices with different reception sensitivities can be created depending on the change in shape.

[0526] Figure 41A shows the external appearance of the head-mounted display 8200.

[0527] The head-mounted display 8200 includes a mounting section 8201, lenses 8202, a main unit 8203, a display unit 8204, a cable 8205, etc. The mounting section 8201 also has a built-in battery 8206.

[0528] Cable 8205 supplies power from battery 8206 to main unit 8203. Main unit 8203 is equipped with a wireless receiver and can display received video information on display unit 8204. In addition, main unit 8203 is equipped with a camera and can use information about the user's eyeball or eyelid movements as an input means.

[0529] Furthermore, the attachment unit 8201 may be provided with multiple electrodes at a position that touches the user, capable of detecting the current flowing in accordance with the user's eye movements, and may have a function to recognize the user's gaze. It may also have a function to monitor the user's pulse rate based on the current flowing through the electrodes. In addition, the attachment unit 8201 may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor, and may have a function to display the user's biometric information on the display unit 8204, or a function to change the image displayed on the display unit 8204 in accordance with the user's head movements.

[0530] A display device according to one aspect of the present invention can be applied to the display unit 8204.

[0531] Figure 41B shows the external appearance of a goggle-type head-mounted display 8400. The head-mounted display 8400 has a pair of housings 8401, a mounting part 8402, and a cushioning member 8403. A display unit 8404 and a lens 8405 are provided inside each of the pair of housings 8401. By displaying different images on the pair of display units 8404, a three-dimensional display using parallax can be achieved.

[0532] The user can view the display unit 8404 through the lens 8405. The lens 8405 has a focus adjustment mechanism and its position can be adjusted according to the user's eyesight. The display unit 8404 is preferably a square or a horizontally elongated rectangle. This can enhance the sense of realism.

[0533] The mounting portion 8402 is preferably adjustable to the size of the user's face and has plasticity and elasticity to prevent it from slipping off. Furthermore, it is preferable that a part of the mounting portion 8402 has a vibration mechanism that functions as a bone conduction earphone. This eliminates the need for separate audio equipment such as earphones or speakers, allowing users to enjoy video and audio simply by wearing the device. The housing 8401 may also have a function to output audio data via wireless communication.

[0534] The mounting portion 8402 and the cushioning member 8403 are parts that come into contact with the user's face (forehead, cheeks, etc.). By ensuring that the cushioning member 8403 is in close contact with the user's face, light leakage can be prevented, thereby enhancing the sense of immersion. It is preferable to use a soft material for the cushioning member 8403 so that it adheres closely to the user's face when the user wears the head-mounted display 8400. For example, materials such as rubber, silicone rubber, urethane, and sponge can be used. Furthermore, if the surface of a sponge or similar material is covered with cloth, leather (genuine leather or synthetic leather), gaps are less likely to form between the user's face and the cushioning member 8403, effectively preventing light leakage. In addition, using such materials is preferable because it feels good against the skin and does not make the user feel cold when worn in cold seasons. It is preferable that the components that come into contact with the user's skin, such as the cushioning member 8403 or the mounting portion 8402, are removable, as this makes cleaning or replacement easier.

[0535] Figures 41C to 41E show the external appearance of the head-mounted display 8300. The head-mounted display 8300 includes a housing 8301, a display unit 8302, a band-shaped fixing device 8304, and a pair of lenses 8305.

[0536] The user can view the display on the display unit 8302 through the lens 8305. It is preferable to position the display unit 8302 in a curved shape, as this allows the user to experience a greater sense of presence. Furthermore, by viewing different images displayed in different areas of the display unit 8302 through the lens 8305, three-dimensional display using parallax can be performed. Note that the configuration is not limited to a single display unit 8302; two display units 8302 may be provided, with one display unit for each of the user's eyes.

[0537] A display device according to one embodiment of the present invention can be applied to the display unit 8302. The display device according to one embodiment of the present invention can also achieve extremely high resolution. For example, even when the display is magnified and viewed using the lens 8305 as shown in Figure 41E, the pixels are difficult for the user to see. In other words, the display unit 8302 can be used to allow the user to view images with a high degree of realism.

[0538] The configurations, structures, and methods shown in this embodiment can be used in appropriate combination with the configurations, structures, and methods shown in other embodiments. [Explanation of symbols]

[0539] C2: Capacitive element, C3: Capacitive element, M11: Transistor, M12: Transistor, M13: Transistor, M14: Transistor, M15: Transistor, M16: Transistor, M17: Transistor, OUT1: Wiring, OUT2: Wiring, PIX1: Pixel circuit, PIX2: Pixel circuit, V1: Wiring, V2: Wiring, V3: Wiring, V4: Wiring, V5: Wiring, 10: Electronic equipment, 11: Application processor, 12: Baseband processor, 14: Memory, 15: Battery, 16: Power management IC, 17: Display unit, 18: Camera unit, 19: Control Input section, 20: Audio IC, 21: Microphone, 22: Speaker, 33: Sub-pixel, 33B: Sub-pixel, 33G: Sub-pixel, 33R: Sub-pixel, 33Y: Sub-pixel, 36: Interface section, 40: Oscillator circuit, 50: Enclosure, 60: Substrate, 70: Layer, 90B: Light-emitting device, 90G: Light-emitting device, 90R: Light-emitting device, 90S: Light-receiving device, 100: Display device, 101: Display device, 102: Display device, 103: Display device, 105: Display device, 110: Substrate, 110f: Substrate, 111: Display section, 112: FPC, 113a: IC, 113b: IC, 114a: Wiring, 114b: Wiring, 115: Circuit, 116: Pixel, 117: Transistor, 118: Display element, 119: Insulating layer, 120: Substrate, 120f: Substrate, 122: FPC, 130: Antenna, 130_N: Antenna, 130_1: Antenna, 131: Conductive layer, 131A: Conductive layer, 131D: Conductive layer, 131P: Conductive layer, 131Q: Conductive layer, 131R: Conductive layer, 131S: Conductive layer, 132: Conductive layer, 133: Aperture, 133A: Aperture, 133B: Aperture, 133C: Aperture, 134: Part, 135: Protrusion, 139: Electrode, 140: Substrate, 141: Integrated circuit, 151 : Layer, 155: Layer, 161: Curved part, 162: Curved part, 165: Area, 166: Area, 167: Area, 170: Keyboard, 200: Display panel, 200A: Display panel, 200B: Display panel, 201: Substrate, 202: Substrate, 203: Functional layer, 210: Fingerprint sensor, 211: Light-emitting device, 211B: Light-emitting device, 211G: Light-emitting device, 211IR: Light-emitting device, 211R: Light-emitting device, 211W: Light-emitting device, 211X: Light-emitting device, 212: Light-receiving device, 213R: Light-receiving / light-receiving device, 220: Finger, 221: Contact area, 222: Fingerprint,223: Imaging area, 225: Stylus, 226: Trajectory, 231: Low-noise amplifier, 232: Mixer, 233: Low-pass filter, 234: Variable gain amplifier, 235: Analog-to-digital conversion circuit, 236: Interface section, 240: Oscillator circuit, 241: Digital-to-analog conversion circuit, 242: Variable gain amplifier, 243: Low-pass filter, 244: Mixer, 245: Power amplifier, 252: Transistor, 254: Connection section, 258: Transistor, 259: Transistor, 260: Transistor, 261: Insulating layer, 262: Insulating layer, 264: 265: Insulating layer, 268: Insulating layer, 271: Conductive layer, 272a: Conductive layer, 272b: Conductive layer, 273: Conductive layer, 275: Insulating layer, 278: Connection part, 281: Semiconductor layer, 281i: Channel formation region, 281n: Low resistance region, 292: Connection layer, 295: Circuit, 296: Si transistor, 297: Si transistor, 301: Insulating layer, 311: Pixel electrode, 311C: Connection electrode, 311G: Pixel electrode, 311R: Pixel electrode, 312B: Organic layer, 312G: Organic layer, 312R: Organic layer, 313: Common electrode, 314: Organic layer, 315: Organic layer, 321: Protection Layer, 322: Planarization film, 325: Insulating layer, 326: Resin layer, 330: Connection part, 400: Electronic equipment, 400A: Electronic equipment, 400B: Electronic equipment, 401: Display device, 401A: Area, 401B: Area, 401C: Area, 402: Housing, 411a: Conductive layer, 411b: Conductive layer, 411c: Conductive layer, 412G: EL layer, 412S: Photoelectric conversion layer, 413: Common electrode, 414: Organic layer, 416: Protective layer, 417: Light-shielding layer, 418: Color filter, 421: Insulating layer, 422: Resin layer, 430b: Light-emitting device, 430c: Light-emitting device, 440: Light-receiving device, 442 :Adhesive layer, 465:Wiring, 466:Conductive layer, 500:Touch panel, 600:Display device, 601:Display device, 711:Light-emitting layer, 712:Light-emitting layer, 713:Light-emitting layer, 720:Layer, 720-1:Layer, 720-2:Layer, 730:Layer, 730-1:Layer, 730-2:Layer, 750B:Light-emitting device, 750G:Light-emitting device, 750R:Light-emitting device, 751:Layer, 752:Layer, 753B:Light-emitting layer, 753G:Light-emitting layer, 753R:Light-emitting layer, 754:Layer, 755:Layer, 760:Light-receiving device, 761:Layer, 762:Layer, 763:Layer, 790:EL layer, 790a:EL layer,790b: EL layer, 791: lower electrode, 791B: pixel electrode, 791G: pixel electrode, 791PD: pixel electrode, 791R: pixel electrode, 792: upper electrode, 795: coloring layer, 6100: personal digital assistant, 6101: housing, 6102: display unit, 6103: band, 6105: operation buttons, 6200: personal digital assistant, 6201: housing, 6202: display unit, 6203: operation buttons, 6204: speaker, 6205: microphone, 6209: fingerprint sensor, 6300: cleaning robot, 6301: housing, 6302: display unit, 6303: camera, 6304: brush, 6305: operation buttons, 6310: dust, 6400: robot, 6401: illuminance sensor, 6402: microphone, 6403: upper Camera, 6404: Speaker, 6405: Display unit, 6406: Lower camera, 6407: Obstacle sensor, 6408: Movement mechanism, 6409: Processing unit, 6500: Television receiver, 6501: Housing, 6502: Display unit, 6503: Speaker, 7160: Automobile, 8200: Head-mounted display, 8201: Mounting part, 8202: Lens, 8203: Main unit, 8204: Display unit, 8205: Cable, 8206: Battery, 8300: Head-mounted display, 8301: Housing, 8302: Display unit, 8304: Fixing device, 8305: Lens, 8400: Head-mounted display, 8401: Housing, 8402: Mounting part, 8403: Cushioning material, 8404: Display unit, 8405: Lens,

Claims

1. It comprises a first substrate and a second substrate, each having overlapping regions. Between the first substrate and the second substrate, there are provided a plurality of first conductive layers, a plurality of second conductive layers, and a plurality of display elements. The plurality of display elements are provided between the first substrate and the layer on which the plurality of first conductive layers and the plurality of second conductive layers are arranged. Each of the plurality of first conductive layers has a plurality of first openings, Each of the plurality of second conductive layers has a plurality of second openings, One of the plurality of display elements has a region that overlaps with one of the plurality of first apertures, Another of the plurality of display elements has a region that overlaps with one of the plurality of second apertures, In a plan view, the plurality of first conductive layers and the plurality of second conductive layers do not overlap each other. The plurality of first conductive layers have the function of an antenna and the function of a first electrode of a touch sensor. Each of the plurality of second conductive layers functions as a second electrode of the touch sensor. The functions of the plurality of first conductive layers can be switched. The plurality of second conductive layers described above do not have the function of an antenna. A display device in which the plurality of first conductive layers are arranged in a matrix such that at least one of the plurality of second conductive layers is sandwiched between them.

2. It comprises a first substrate and a second substrate, each having overlapping regions. Between the first substrate and the second substrate, there are provided a plurality of first conductive layers, a plurality of second conductive layers, and a plurality of display elements. The plurality of display elements are provided between the first substrate and the layer on which the plurality of first conductive layers and the plurality of second conductive layers are arranged. Each of the plurality of first conductive layers has a plurality of first openings, Each of the plurality of second conductive layers has a plurality of second openings, One of the plurality of display elements has a region that overlaps with one of the plurality of first apertures, Another of the plurality of display elements has a region that overlaps with one of the plurality of second apertures, In a plan view, the plurality of first conductive layers and the plurality of second conductive layers do not overlap each other. The plurality of first conductive layers have the function of an antenna and the function of a first electrode of a touch sensor. Each of the plurality of second conductive layers functions as a second electrode of the touch sensor. The functions of the plurality of first conductive layers can be switched. The plurality of second conductive layers described above do not have the function of an antenna. The plurality of first conductive layers are arranged in a matrix such that at least one of the plurality of second conductive layers is sandwiched between them. Each of the plurality of first conductive layers is a display device having a metal selected from silver, copper, or aluminum.

3. In claim 1, The aforementioned display element is an organic EL element, which is a display device.

4. In claim 2, The aforementioned display element is an organic EL element, which is a display device.

5. An electronic device comprising a display device according to any one of claims 1 to 4 and a fingerprint sensor.

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