Semiconductor heat treatment apparatus and temperature control method thereof

Abstract

The semiconductor heat treatment apparatus of the present invention includes a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller. The coil is installed so as to surround the chamber and provides a heat field to the chamber. The chamber is provided with a first temperature measuring hole and a second temperature measuring hole distributed in the central region of the chamber. The first temperature sensor detects the temperature of the chamber through the first temperature measuring hole and sets it as the first temperature. The second temperature sensor detects the temperature of the chamber through the second temperature measuring hole and sets it as the second temperature. The temperature controller acquires the first and second temperatures. When the temperature of the chamber reaches a steady state, the temperature controller determines, based on the first and / or second temperatures, whether the center position of the coil is offset from the center point of the chamber. If it is offset, the temperature controller controls the coil to move parallel along the central axis until the center position of the coil reaches the center point of the chamber, based on the first and / or second temperatures.

Description

[Technical Field]

[0001] This application relates to the semiconductor technology field, and more particularly to semiconductor heat treatment apparatus and temperature control method thereof. [Background technology]

[0002] Epitaxial growth refers to the process of growing a specific epitaxial thin film on a wafer via an epitaxial process. The wafer and the epitaxial thin film together are called an epitaxial wafer. Currently, epitaxial layer growth of silicon carbide is mainly performed using the Chemical Vapor Deposition (CVD) method. The specific chemical reaction involves decomposing SiH4 and C3H8 (C2H4) at high temperatures (above 1600°C) and under reduced pressure (around 100 mbar) to generate Si atoms and C atoms, which are then recombined on the wafer surface to produce SiC. Thermochemical deposition is widely applied to the growth of epitaxial layers, and temperature is a crucial influencing factor, significantly affecting the uniformity of doping and film thickness. If the temperature deviates from the set process temperature, it will have a significant adverse effect on the process parameters.

[0003] However, in the semiconductor devices in question, it is not possible to guarantee that the wafer will be located at the highest temperature point within the chamber during the processing steps, and consequently, it is not possible to guarantee the uniformity of the wafer temperature. [Overview of the project] [Problems that the invention aims to solve]

[0004] In view of this, the present invention aims to provide a semiconductor heat treatment apparatus and a temperature control method thereof that ensures uniformity of temperature in the wafer region by guaranteeing that the center of the wafer coincides with the center of the coil during the processing process, thereby always positioning the wafer at the location of the highest temperature. [Means for solving the problem]

[0005] To achieve the above objective, the embodiments of this application utilize the following technical means.

[0006] In the first embodiment, the semiconductor heat treatment apparatus provided in the embodiment of the present application includes a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller, wherein the chamber is on which a wafer to be processed is placed, the coil is installed so as to surround the chamber and provides a heat field to the chamber, the chamber is provided with a first temperature measuring hole and a second temperature measuring hole, the first temperature measuring hole and the second temperature measuring hole are distributed in the central region of the chamber, the first temperature sensor detects the temperature of the chamber through the first temperature measuring hole and sets it as a first temperature, the second temperature sensor detects the temperature of the chamber through the second temperature measuring hole and sets it as a second temperature, the temperature controller acquires the first temperature and the second temperature, and when the temperature of the chamber reaches a steady state, it determines, based on the first temperature and / or the second temperature, whether the center position of the coil is shifted from the center point of the chamber, and if it is shifted, it controls the coil to move parallel along the central axis until the center position of the coil reaches the center point of the chamber, based on the first temperature and / or the second temperature.

[0007] Furthermore, the temperature controller determines whether the first temperature and the second temperature are equal. If the first temperature and the second temperature are not equal, it determines that the center position of the coil is offset from the center point of the chamber. Based on the first and second temperatures, it controls the coil to move parallel along the central axis until it determines that the first temperature and the second temperature are equal and the center position of the coil has reached the center point of the chamber.

[0008] Furthermore, the chamber includes multiple regions, each having the same number of coil turns, the temperature controller stores a temperature gradient distribution curve when the chamber temperature reaches a steady state, the temperature gradient distribution curve represents the chamber temperature corresponding to each region, the temperature controller further acquires the region in the chamber where the first temperature measurement hole is located and designates it as the first installation region, identifies the chamber temperature corresponding to the first installation region in the temperature gradient distribution curve and designates it as the first target temperature, determines whether the first temperature and the first target temperature are equal, and if the first temperature and the first target temperature are not equal, determines that the center position of the coil is offset from the center point of the chamber. and / or, The temperature controller further acquires the region in the chamber where the second temperature measurement hole is located and defines it as the second installation region, identifies the chamber temperature corresponding to the second installation region in the temperature gradient distribution curve and defines it as the second target temperature, determines whether the second temperature and the second target temperature are equal, and if the second temperature and the second target temperature are not equal, determines that the center position of the coil is offset from the center point of the chamber.

[0009] Furthermore, the semiconductor heat treatment apparatus further includes a drive member connected to the coil and driven to move the coil in parallel, The temperature controller further calculates the amount and direction of translation of the coil based on the first target temperature and the first temperature, and controls the drive member based on the amount and direction of translation to drive the coil to translate until the center point of the coil coincides with the center point of the chamber. and / or, The temperature controller further calculates the amount and direction of translation of the coil based on the second target temperature and the second temperature, and controls the drive member based on the amount and direction of translation to drive the coil and move it in parallel until the center point of the coil coincides with the center point of the chamber.

[0010] Furthermore, the temperature controller is a programmable logic controller, and the programmable logic controller is communicated to the first temperature sensor, the second temperature sensor, and the inductive power supply for the coil, respectively.

[0011] In the second embodiment, the temperature control method for a semiconductor heat treatment apparatus provided in the embodiment of the present application is used in the semiconductor heat treatment apparatus described in the first embodiment, and the temperature control method is The steps include obtaining a first temperature detected by the first temperature sensor and obtaining a second temperature detected by the second temperature sensor, When the temperature of the chamber reaches a steady state, the step of determining whether the center position of the coil is offset from the center point of the chamber based on the first temperature and / or the second temperature, If misaligned, the method includes controlling the coil to move parallel to the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber.

[0012] Furthermore, the step of determining whether the center position of the coil is offset from the center point of the chamber based on the first temperature and / or the second temperature is, The process includes determining whether the first temperature and the second temperature are equal, and if the first temperature and the second temperature are not equal, determining that the center position of the coil is offset from the center point of the chamber. and / or, The step of controlling the coil to move in parallel along the central axis until the center position of the coil reaches the center point of the chamber, based on the first temperature and / or the second temperature, If the first temperature is greater than the second temperature, the coil is controlled to move in a parallel direction toward the first direction, which is the direction in which the second temperature measuring hole is located, until the first temperature and the second temperature become equal. when said first temperature is lower than said second temperature, controlling said coil to move parallel in a second direction which is the direction where said first temperature measurement hole is located until said first temperature becomes equal to said second temperature.

[0013] further, said temperature control method comprises: calculating the skin depth of said chamber at a predetermined process temperature, acquiring the alternating current value of said coil, dividing said chamber into a plurality of regions with the same number of coil turns based on the number of turns of said coil, and calculating the heat source intensity of each said region of said chamber based on said skin depth and said alternating current value; acquiring environmental temperatures at both ends of said chamber when the temperature of said chamber reaches a steady state, calculating the chamber temperature of each said region based on said environmental temperature and the heat source intensity of each said region, and acquiring a temperature gradient distribution curve of said chamber.

[0014] further, said step of calculating the chamber temperature of each said region based on said environmental temperature and the heat source intensity of each said region comprises: starting from a first region at any one end of said chamber, calculating the chamber temperature of said first region when the processing process reaches a steady state based on the heat source intensity of said first region and said environmental temperature; taking the chamber temperature of said first region as the environmental temperature of the next adjacent region, calculating the chamber temperature of said next region when the processing process reaches a steady state based on the environmental temperature of said next region and the heat source intensity of said next region, and continuing this process until the chamber temperature of the region where the central point of said chamber is located is calculated; acquiring the chamber temperature of each region from the region where the central point of said chamber is located to the other end of said chamber based on the temperature symmetry of each chamber from said first region to the region where the central point is located.

[0015] further, the calculation formula for said chamber temperature is: [Formula] And in the formula, T i1 F is the chamber temperature of the i-th region. i σ is the heat source intensity of the i-th region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the internal surface area of ​​the chamber, and T i2 This is the ambient temperature corresponding to the i-th region, and V i This is the volume of the i-th region.

[0016] Furthermore, the step of determining whether the center position of the coil is offset from the center point of the chamber based on the first temperature and / or the second temperature is, The steps include: obtaining the region in the chamber where the first temperature measurement hole is located and defining it as the first installation region; identifying the chamber temperature corresponding to the first installation region in the temperature gradient distribution curve and defining it as the first target temperature; determining whether the first temperature and the first target temperature are equal; and if the first temperature and the first target temperature are not equal, determining that the center position of the coil is offset from the center point of the chamber. and / or, The method includes obtaining the region in the chamber where the second temperature measurement hole is located and defining it as the second installation region, identifying the chamber temperature corresponding to the second installation region in the temperature gradient distribution curve and defining it as the second target temperature, determining whether the second temperature and the second target temperature are equal, and if the second temperature and the second target temperature are not equal, determining that the center position of the coil is offset from the center point of the chamber.

[0017] Furthermore, the semiconductor heat treatment apparatus further includes a drive member connected to the coil and driving the coil to move in parallel, and the step of controlling the coil to move in parallel along the central axis until the center position of the coil reaches the center point of the chamber, based on the first temperature and / or second temperature, A step of calculating the amount and direction of translation of the coil based on the first target temperature and the first temperature, and controlling the rotation of the drive member based on the amount and direction of translation to drive and translate the coil until the center position of the coil coincides with the center point of the chamber. and / or, The process includes calculating the amount and direction of translation of the coil based on the second target temperature and the second temperature, and controlling the drive member to rotate based on the amount and direction of translation, thereby driving the coil to translate until the center position of the coil coincides with the center point of the chamber. [Effects of the Invention]

[0018] Embodiments of the present invention provide a semiconductor heat treatment apparatus and a temperature control method thereof, the semiconductor heat treatment apparatus comprising a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller, wherein the chamber is on which a wafer to be processed is placed, the coil is installed so as to surround the chamber and provides a heat field to the chamber, the chamber is provided with a first temperature measuring hole and a second temperature measuring hole, the first temperature measuring hole and the second temperature measuring hole are distributed in the central region of the chamber, the first temperature sensor detects the temperature of the chamber through the first temperature measuring hole and sets it as the first temperature, the second temperature sensor detects the temperature of the chamber through the second temperature measuring hole and sets it as the second temperature, the temperature controller acquires the first temperature and the second temperature, and when the temperature of the chamber reaches a steady state, it determines whether the center position of the coil is shifted from the center point of the chamber based on the first temperature and / or the second temperature, and if it is shifted, it controls the coil to move parallel along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber. In this invention, two temperature sensors are installed in the chamber, and when the chamber temperature reaches a steady state, it is possible to determine whether the center position of the coil is offset from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, thereby determining whether the center point of the wafer is located at the highest temperature point. When the wafer is offset from the center position of the coil, the coil is moved to bring the center position of the coil to the center point of the chamber, thereby ensuring that the center of the wafer coincides with the center of the coil during the processing process, and thereby ensuring that the wafer is always located at the highest temperature point and guaranteeing temperature uniformity of the wafer.

[0019] Other features and advantages of the embodiments of the present application are described in the following specification, or some features and advantages may be inferred from the specification, identified without doubt, or understood by carrying out the above-described techniques of the embodiments of the present application.

[0020] To clarify and make easier to understand the above-mentioned objectives, features, and advantages of this application, preferred embodiments will be described in detail below with reference to the drawings. [Brief explanation of the drawing]

[0021] To more clearly describe specific embodiments of the present application or technical means in the prior art, the drawings necessary for describing specific embodiments or the prior art are briefly described below. Clearly, the drawings described below are some embodiments of the present application, and those skilled in the art can obtain other drawings based on these without any creative work.

[0022] [Figure 1] A schematic diagram of the chamber structure of the related semiconductor heat treatment apparatus is shown. [Figure 2a] A front view of the chamber structure according to an embodiment of the present invention is shown. [Figure 2b] A side view of the chamber structure according to an embodiment of the present invention is shown. [Figure 3] The chamber temperature distribution curve diagrams for each region of the chamber according to the embodiment of the present invention are shown. [Figure 4] A flowchart of the temperature control method for a semiconductor heat treatment apparatus according to an embodiment of the present invention is shown. [Figure 5] A schematic diagram of the heat source intensity distribution in each region of the chamber according to the embodiment of the present invention is shown. [Modes for carrying out the invention]

[0023] To further clarify the purpose, technical means, and advantages of the embodiments of this application, the technical means of this application will be described below with reference to the drawings. Clearly, the embodiments described are only some, and not all, embodiments of this application.

[0024] In related wafer heating technologies, induction heating is typically used as the main heating method for silicon carbide epitaxial wafers. This method offers various advantages such as fast heating speed, high heating efficiency, quick startup, and energy savings, and is widely applied in the semiconductor industry. In silicon carbide epitaxial processes, temperature uniformity and accuracy near the substrate are strictly required. The coil, as a medium for generating a magnetic field, directly influences the temperature field distribution during the heating process.

[0025] When an alternating current is passed through a coil, a corresponding magnetic field and magnetic flux are generated, inducing an electromotive force in a chamber (for example, a hollow cylindrical graphite member) placed inside the coil, causing eddy currents to flow through the chamber. The wafer is pre-positioned at the center of the chamber. The reaction gas flows horizontally through the chamber from one end of the coil and is pumped out from the other end, resulting in a lower ambient temperature near the horizontal edge region of the chamber. When the chamber is in a low-pressure vacuum state, based on the principle of thermal radiation, the temperature on both sides of the coil is low, and if the wafer is positioned at the center of the coil, the highest point in the temperature field coincides with the center of the wafer. However, because the chamber inside the coil is attached to the coil using an incomplete fixing method, if it is artificially attached and not securely fixed, the wafer may shift from the center of the coil. Therefore, in the relevant semiconductor device, it is not possible to guarantee that the wafer will be positioned at the highest temperature point in the chamber during the processing, nor can the uniformity of the wafer temperature be guaranteed.

[0026] Referring to the schematic diagram of the chamber structure of the related semiconductor heat treatment apparatus shown in Figure 1, the chamber is made of graphite material, and the graphite chamber has a hollow cylindrical structure, with two semicircular segments joined together to form a complete cylinder, and a wafer placement position is pre-defined in the middle of the centerline of the graphite material. Currently, since parallel intake type silicon carbide epitaxial apparatus cannot directly measure the wafer temperature, the chamber temperature is indirectly measured using an infrared thermometer through the temperature measurement hole shown in Figure 1. The temperature measurement hole is usually located as shown in Figure 1, It is positioned directly above the wafer mounting position. A coil is placed on the outside of the graphite member, with a constant number of turns and spacing. By passing an alternating current through the coil, a corresponding magnetic field and magnetic flux are generated, inducing an electromotive force in the graphite member placed within the coil, causing eddy currents to flow through the graphite member. When the current flows through the graphite member, an opposing force is generated due to electrical resistance, and the energy passes through the graphite member in the form of heat, resulting in heating of the graphite member and the wafer inside it. Furthermore, the technology of related semiconductor heat treatment devices has the following drawbacks.

[0027] Regarding drawback 1: Since the reaction gas flows horizontally from the right side of the coil in Figure 1 through the graphite member and is pumped out from the left side of the coil, the ambient temperature on both sides of the graphite member is low, and when the chamber is in a low-pressure vacuum state, the temperature on both sides of the coil is low based on the principle of thermal radiation. The magnitude of the reaction gas flow rate, the magnitude of the chamber pressure, and the suction force of the pump all affect the temperature uniformity at the center of the graphite member. Since the position of the coil cannot be adjusted and the winding spacing and number of turns of the coil are constant, the only way to adjust the temperature at the center of the graphite member is to adjust the magnitude of the alternating current passing through the coil, which not only wastes power but also increases the time required for temperature adjustment.

[0028] Regarding drawback 2: Because the graphite component inside the coil is attached using an incomplete fixing method, if it is not securely fixed, the center point of the graphite component may shift from the center position of the coil. If the position of the coil cannot be adjusted, this will affect the temperature uniformity at the center of the graphite component.

[0029] Regarding drawback 3: Parallel intake silicon carbide epitaxial apparatus cannot directly measure the wafer temperature; instead, it indirectly detects the wafer temperature by measuring the temperature of a graphite component directly above the wafer. The measured temperature of the graphite component changes with changes in the temperature field, and measuring the temperature of the graphite component using a single temperature measurement hole cannot guarantee the reliability of the temperature measurement.

[0030] To solve one of the above problems, this embodiment provides a semiconductor heat treatment apparatus including a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller.

[0031] The above-mentioned chamber holds the wafer to be processed, and the coil is installed so as to surround the chamber, providing a heat field to the chamber. Referring to the front view of the chamber structure shown in Figure 2a and the side view of the chamber structure shown in Figure 2b, the chamber is equipped with a first temperature measurement hole 21 and a second temperature measurement hole 22, which are distributed in the central region of the chamber. The position of the wafer to be processed 20 is set at a position where the center point of the wafer to be processed 20 coincides with the center point of the chamber, that is, the center point of the chamber and the center point of the wafer are the same point.

[0032] The first temperature sensor detects the temperature of the chamber through the first temperature measurement hole 21 and sets it as the first temperature.

[0033] The second temperature sensor detects the chamber temperature through the second temperature measurement port 22 and sets it as the second temperature.

[0034] The temperature controller acquires the first and second temperatures, and when the chamber temperature reaches a steady state, it determines, based on the first and / or second temperatures, whether the center position of the coil is offset from the center point of the chamber. If it is offset, it controls the coil to move parallel along the central axis, based on the first and / or second temperatures, until the center position of the coil reaches the center point of the chamber. It is easy to understand that the central axis of the coil coincides with the central axis of the chamber.

[0035] After the process is started, current is passed through the coil to heat the chamber at a constant power. After heating for a certain period of time (for example, after 30 minutes of heating), when the chamber temperature reaches the required process temperature, it is determined whether the fluctuation range of the chamber temperature within a predetermined time is smaller than a set range. If it is smaller, it is determined that the chamber temperature has reached a steady state. In one specific embodiment, the chamber temperature is detected in real time by a first temperature sensor and / or a second temperature sensor. When the chamber temperature reaches the set process temperature and the fluctuation range within 1 minute is less than 0.2°C, it can be determined that the chamber temperature has reached a steady state. The first and second temperature sensors monitor the chamber temperature (i.e., the temperature of the inner wall of the chamber).

[0036] Through the inventors' research, they found that when the chamber temperature reaches a steady state, the highest temperature point is either at the center of the coil or distributed within the central region of the chamber. This central region is centered on the center of the chamber, with its edges at a certain distance (e.g., 5 mm) from the center. Any temperature within this central region can be considered the highest temperature point, meaning the difference between the temperature within this central region and the actual highest temperature point is within an acceptable deviation range. When the first and second temperature sensors are distributed within the central region of the chamber, if the center of the chamber coincides with the center of the coil, i.e., if the center of the wafer coincides with the center of the coil, then the temperature values ​​detected by the first and second temperature sensors are equal, or the difference between them is within an acceptable deviation range.

[0037] In one embodiment, by determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal, or whether the difference between them is within an acceptable deviation range, it is possible to determine whether the center position of the coil is offset from the center point of the chamber, or whether the offset distance from the center point exceeds an acceptable deviation range. Furthermore, it is possible to determine whether the center point of the wafer is offset from the center position of the coil.

[0038] In some embodiments, the first temperature measurement holes 21 and the second temperature measurement holes 22 are distributed on both sides of the center of the chamber, and in one preferred embodiment, the first temperature measurement holes 21 and the second temperature measurement holes 22 are distributed symmetrically with respect to the center of the chamber. In this way, the first temperature sensor and the second temperature sensor can be distributed at equal intervals in the central region of the wafer and are centrosymmetrical, and if the center point of the chamber coincides with the center point of the coil, that is, if the center point of the wafer coincides with the center point of the coil, the temperature values ​​detected by the first temperature sensor and the second temperature sensor will be equal. By determining whether the first temperature and the second temperature detected by the first temperature sensor and the second temperature sensor are equal, it is possible to determine whether the center position of the coil is offset from the center point of the chamber, and further, whether the center point of the wafer is offset from the center position of the coil.

[0039] In this embodiment, there is one first temperature measuring hole 21 and one second temperature measuring hole 22. However, the embodiments of this application are not limited to this, and in actual applications, there may be multiple first temperature measuring holes 21 and two second temperature measuring holes 22, which may be installed in pairs, with each pair of first temperature measuring holes 21 and two second temperature measuring holes 22 distributed in the central region of the chamber. Based on this, the first temperature sensor and the second temperature sensor are installed in pairs, and each pair of first temperature sensors and second temperature sensors corresponds one-to-one with each pair of first temperature measuring holes 21 and two second temperature measuring holes 22.

[0040] In another embodiment, a chamber temperature distribution curve is obtained when the chamber temperature reaches a steady state, and based on the chamber temperature distribution curve, it is possible to determine whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is appropriate (for example, whether the first temperature or the second temperature is equal to the temperature in the chamber temperature distribution curve), thereby determining whether the center position of the coil is offset from the center point of the chamber, or whether the offset distance from the center point exceeds the allowable deviation range, and further, whether the center point of the wafer is offset from the center position of the coil.

[0041] In the semiconductor heat treatment apparatus according to this embodiment, two temperature measurement holes are installed in the chamber. When the chamber temperature reaches a steady state, it is possible to determine whether the center position of the coil is offset from the center point of the chamber, or whether the offset distance from the center point exceeds the allowable deviation range, based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, thereby determining whether the center point of the wafer is located at the highest temperature point. When the wafer is offset from the center position of the coil, the coil is moved so that the center position of the coil reaches the center point of the chamber, thereby ensuring that the center of the wafer coincides with the center of the coil during the processing process. This ensures that the wafer is always positioned at the highest temperature point and guarantees uniformity of the wafer temperature.

[0042] In one embodiment, the temperature controller according to this embodiment further determines whether the first temperature and the second temperature are equal, or whether the difference between them is within an allowable deviation range. If the first temperature and the second temperature are not equal, or the difference between them exceeds the allowable deviation range, it determines that the center position of the coil is shifted from the center point of the chamber. Based on the first and second temperatures, it controls the coil to move parallel along the central axis until it determines that the first temperature and the second temperature are equal, or the difference between them is within an allowable deviation range, and the center position of the coil has reached the center point of the chamber.

[0043] If the temperature values ​​detected by the first and second temperature sensors are not equal, or if the difference between them exceeds the allowable deviation range, it indicates that the center point of the chamber does not coincide with the center point of the coil, that is, the center point of the wafer is offset from the center position of the coil, or the offset distance from the center position exceeds the allowable deviation range. Therefore, the coil is controlled to move in parallel along its central axis until the temperature values ​​detected by the first and second temperature sensors become equal, or the difference between them falls within the allowable deviation range, the center position of the coil reaches the center point of the chamber, that is, the center position of the coil reaches the center point of the wafer, and it is determined that the wafer has reached its highest temperature point (i.e., the coil fitted to the outside of the chamber is moved in parallel along the central axis of the chamber, and the distance between the coil and the outer wall of the chamber does not change during the translation process, for example, the central axis of the coil is maintained to coincide with the central axis of the chamber), thereby translating the center position of the coil.

[0044] In another embodiment, the chamber according to this embodiment includes multiple regions, each region having the same number of coil turns. The temperature controller stores the temperature gradient distribution curve when the chamber temperature reaches a steady state, and the temperature gradient distribution curve represents the chamber temperature corresponding to each region. Based on the number of coil turns outside the chamber, the coil is evenly divided into multiple regions. For example, the chamber inside a coil with a total of 10 turns may be divided into 10 regions, each region having 1 coil turn. Referring to the chamber temperature distribution curve diagram for each region of the chamber shown in Figure 3, in the curve diagram of Figure 3, the horizontal axis is the region number, and the vertical axis is the chamber temperature (in k). As can be seen from Figure 3, the chamber temperature after the chamber reaches a steady state is an axisymmetric nonlinear distribution, and the highest temperature point is at the center point of the coil, i.e., the center point of the chamber and wafer. Therefore, if the two temperature measurement points are distributed in the central region of the chamber, preferably equally spaced and symmetrical, and the center point of the coil coincides with the center point of the chamber, then the temperatures measured at the two temperature measurement points are equal, or the difference between them is within an acceptable deviation range. By adjusting the position of the coil based on the temperature difference between the two temperature measurement points, the highest temperature point in the temperature field can be made to coincide with the center of the wafer.

[0045] In some embodiments, the temperature controller further acquires the region in the chamber where the first temperature measurement hole is located and defines it as the first installation region, and identifies the chamber temperature corresponding to the first installation region in the temperature gradient distribution curve and defines it as the first target temperature. It determines whether the first temperature and the first target temperature are equal, or whether the difference between them is within an acceptable deviation range. If the first temperature and the first target temperature are not equal, or if the difference exceeds the acceptable deviation range, it determines that the center position of the coil is offset from the center point of the chamber. The first target temperature is the temperature that the first temperature sensor should detect when the center point of the chamber coincides with the center point of the coil.

[0046] In some embodiments, the temperature controller further acquires the region in the chamber where the second temperature measurement hole is located and defines it as the second installation region, and identifies the chamber temperature corresponding to the second installation region in the temperature gradient distribution curve and defines it as the second target temperature. It determines whether the second temperature and the second target temperature are equal, or whether the difference between them is within an acceptable deviation range. If the second temperature and the second target temperature are not equal, or if the difference exceeds the acceptable deviation range, it determines that the center position of the coil is offset from the center point of the chamber. The above second target temperature is the temperature that the second temperature sensor should detect when the center point of the chamber coincides with the center point of the coil.

[0047] The temperature controller may acquire the first installation area, identify the chamber temperature corresponding to the first installation area in the temperature gradient distribution curve, and determine that the coil's center position is offset from the center point of the chamber if the first temperature and the first target temperature are not equal or exceed the allowable deviation range. Alternatively, it may acquire the second installation area, identify the chamber temperature corresponding to the second installation area in the temperature gradient distribution curve, and determine that the coil's center position is offset from the center point of the chamber if the second temperature and the second target temperature are not equal or exceed the allowable deviation range. The temperature controller may acquire both the first and second installation areas, identify the chamber temperatures corresponding to both in the temperature gradient distribution curve, and determine that the coil's center position is offset from the center point of the chamber if the first temperature and the first target temperature are not equal or exceed the allowable deviation range, and / or if the second temperature and the second target temperature are not equal or exceed the allowable deviation range. If the first temperature is equal to the first target temperature, or the difference between the two is within the allowable deviation range, and the second temperature is equal to the second target temperature, or the difference between the two is within the allowable deviation range, then the center point of the chamber coincides with the center point of the coil, indicating that the coil is not misaligned.

[0048] Using the chamber temperature distribution curve diagram shown in Figure 3 as an example, assuming that the first installation area of ​​the first temperature measurement hole is area 8 and the second installation area of ​​the second temperature measurement hole is area 2, as can be seen from the chamber temperature distribution curve diagram, when the center point of the chamber coincides with the center point of the coil, the first target temperature corresponding to the first installation area 8 of the first temperature measurement hole in the temperature gradient distribution curve is 1550°C, and the second target temperature corresponding to the second installation area 2 of the second temperature measurement hole in the temperature gradient distribution curve is 1550°C. Therefore, when the chamber temperature reaches a steady state, it is determined whether the first temperature detected by the first temperature sensor is equal to the first target temperature. If the first temperature and the first target temperature are not equal, it indicates that the position of the coil has shifted and the center point of the chamber does not coincide with the center point of the coil. Similarly, it is determined whether the second temperature detected by the second temperature sensor is equal to the second target temperature. If the second temperature and the second target temperature are not equal, it indicates that the position of the coil has shifted and the center point of the chamber does not coincide with the center point of the coil. If the first temperature detected by the first temperature sensor is equal to the second temperature detected by the second temperature sensor, and both are equal to 1550°C, it indicates that the center point of the chamber coincides with the center point of the coil, and that the coil's position has not shifted.

[0049] In one embodiment, the semiconductor heat treatment apparatus according to this embodiment further includes a drive member connected to a coil and driving the coil to move in parallel, the drive member including, for example, a motor.

[0050] In one embodiment, the temperature controller further calculates the amount and direction of translation of the coil based on the first target temperature and the first temperature, and controls the drive member based on the amount and direction of translation to drive the coil to translate until the center point of the coil coincides with the center point of the chamber.

[0051] If the first temperature currently detected by the first temperature sensor is greater than the first target temperature, the center point of the coil is close to the first temperature measurement hole, indicating that the temperature detected by the first temperature sensor is higher than the first target temperature that should be detected if the coil's center is not shifted. Therefore, the coil is controlled to move in parallel toward the direction of the second temperature measurement hole (i.e., toward the second temperature measurement hole from the center point of the chamber). The amount of parallel movement correlates with the difference between the first temperature and the first target temperature, with the larger the difference, the larger the amount of parallel movement. Conversely, if the first temperature is greater than the first target temperature... the goal If the temperature is lower than the target temperature, the center point of the coil is close to the second temperature measurement hole, which indicates that the temperature detected by the first temperature sensor is lower than the first target temperature that should be detected if the center of the coil is not shifted. Therefore, the coil is controlled to be moved in parallel toward the direction of the first temperature measurement hole (i.e., the direction from the center point of the chamber toward the first temperature measurement hole). The amount of parallel movement is the first the goal It correlates with the difference between the temperature and the first temperature, and the first the goal The greater the difference between the temperature and the first temperature, the greater the amount of translation.

[0052] As an example, using the chamber temperature distribution curve shown in Figure 3, and assuming that the first temperature measurement port is located within region 8, if the center point of the chamber coincides with the center point of the coil, then, as shown in Figure 3, the first target temperature that the first temperature sensor should detect is 1550°C. When the chamber temperature reaches a steady state, if the first temperature detected by the first temperature sensor is 1600°C, then the curve in Figure 3 has shifted by one region in the direction of the first temperature measurement port (from region 2 to region 8), meaning that the chamber has shifted by one region towards the second temperature measurement port, indicating that the distance between the center of the coil and the first temperature measurement port is small. The coil is controlled to shift by the length of one region (e.g., 30 mm) in the direction of the second temperature measurement port (from region 8 to region 2), thereby returning both the first and second temperatures to 1550°C.

[0053] In some embodiments, taking the case where the drive member includes a rotary motor and a transmission structure as an example, the forward and reverse rotation of the rotary motor is controlled, the power supplied from the rotary motor is converted into linear power by the transmission structure and transmitted to the coil, thereby controlling the direction of the coil's parallel movement. Naturally, in actual applications, the drive member may further include a linear motor or the like.

[0054] In another embodiment, the temperature controller further calculates the amount and direction of the coil's translation based on a second target temperature and the second temperature, and controls the motor to rotate based on the amount and direction of translation to drive the coil to translate until its center point coincides with the center point of the chamber.

[0055] If the second temperature currently detected by the second temperature sensor is greater than the second target temperature, the center point of the coil is close to the second temperature measurement hole and far from the first temperature measurement hole. This indicates that the second temperature detected by the second temperature sensor is higher than the second target temperature that should be detected if the coil center is not shifted. Therefore, the coil is controlled to be moved in parallel toward the direction of the first temperature measurement hole. The amount of parallel movement is the second temperature and the second target temperature. the goal It correlates with the difference with the temperature, and the second temperature and the second the goal The greater the temperature difference, the greater the amount of parallel displacement. Conversely, if the second temperature is lower than the second target temperature, the center point of the coil is close to the first temperature measurement hole and far from the second temperature measurement hole. This indicates that the second temperature detected by the second temperature sensor is lower than the second target temperature that should be detected if the coil's center is not shifted. Therefore, the coil is controlled to be parallel-shifted toward the second temperature measurement hole. The amount of parallel displacement is second the goal It correlates with the difference between the temperature and the second temperature, and the second the goal The greater the difference between the first temperature and the second temperature, the greater the amount of translation.

[0056] As an example, using the chamber temperature distribution curve shown in Figure 3, and assuming that the second temperature measurement port is located within region 2, if the center of the chamber coincides with the center of the coil, then, as shown in Figure 3, the second target temperature that the second temperature sensor should detect is 1550°C. When the chamber temperature reaches a steady state, if the second temperature detected by the second temperature sensor is 1500°C, then the curve in Figure 3 has shifted by one region in the direction of the first temperature measurement port (i.e., from region 2 to region 8), meaning the chamber has shifted by one region in the direction of the second temperature measurement port, indicating that the distance between the center of the coil and the first temperature measurement port is small, and the distance between the center of the coil and the second temperature measurement port is large. The coil is controlled to shift by the length of one region (e.g., 30 mm) in the direction of the second temperature measurement port (i.e., from region 8 to region 2), returning both the first and second temperatures to 1550°C.

[0057] In one embodiment, the temperature controller according to this embodiment is a programmable logic controller, which is communicatively connected to a first temperature sensor, a second temperature sensor, and an inductive power supply for a coil, thereby enabling the acquisition of a first temperature detected by the first temperature sensor, a second temperature detected by the second temperature sensor, and the alternating current I and current frequency f passing through the coil.

[0058] The semiconductor heat treatment apparatus according to this embodiment adjusts and shifts the coil based on the temperature distribution curve in the chamber and the temperature detected by two temperature sensors, ensuring that the highest temperature point at the center of the coil overlaps with the center of the wafer, thereby ensuring temperature uniformity during wafer growth. This facilitates temperature control of the chamber, increases calculation speed, and improves temperature adjustment efficiency. By detecting the temperature in the chamber using two temperature sensors, temperature measurement can be performed more effectively and reliably, and the positions of the two temperature measurement holes can be used as criteria for determining the position adjustment of the coil, thereby ensuring temperature uniformity in the wafer region.

[0059] In accordance with the semiconductor heat treatment apparatus according to the above embodiment, this embodiment provides a temperature control method for a semiconductor heat treatment apparatus used in the semiconductor heat treatment apparatus according to the above embodiment. Referring to the flowchart of the temperature control method for a semiconductor heat treatment apparatus shown in Figure 4, the method mainly includes the following steps S402 to S406.

[0060] In step S402, the first temperature detected by the first temperature sensor is acquired, and the second temperature detected by the second temperature sensor is acquired.

[0061] The temperature controller is connected to the first temperature sensor and the second temperature sensor via a communication interface, and acquires the first temperature detected by the first temperature sensor and the second temperature detected by the second temperature sensor in real time.

[0062] In step S404, when the chamber temperature reaches a steady state, it is determined, based on the first temperature and / or second temperature, whether the center position of the coil is offset from the center point of the chamber.

[0063] After the process starts, current is passed through the coil to heat the chamber at a constant power. After heating for a certain period of time (for example, 30 minutes), once the chamber temperature reaches the required process temperature, it is determined whether the fluctuation range of the chamber temperature within a predetermined time is smaller than a set range. If it is smaller, it is determined that the chamber temperature has reached a steady state.

[0064] When the chamber temperature reaches a steady state, if the center point of the chamber coincides with the center point of the coil, the temperature values ​​detected by the first temperature sensor and the second temperature sensor will be equal. In one embodiment, by determining whether the first and second temperatures detected by the first and second temperature sensors are equal, or whether the difference between them is within an acceptable deviation range, it is possible to determine whether the center position of the coil is offset from the center point of the chamber, and further, whether the center point of the wafer is offset from the center position of the coil.

[0065] In another embodiment, by determining whether the first temperature detected by the first temperature sensor or the second temperature detected by the second temperature sensor is appropriate based on the chamber temperature distribution curve diagram (for example, whether the first temperature or the second temperature is equal to the temperature in the chamber temperature distribution curve diagram), it is possible to determine whether the center position of the coil is offset from the center point of the chamber, and furthermore, whether the center point of the wafer is offset from the center position of the coil.

[0066] In step S406, if misaligned, the coil is controlled to move parallel to the central axis based on the first and / or second temperatures until the center position of the coil reaches the center point of the chamber.

[0067] In one embodiment, based on the first and second temperatures, the coil is controlled to move parallel along the central axis until the first and second temperatures are equal, or the difference between them falls within an acceptable deviation range, and it is determined that the center position of the coil has reached the center point of the chamber. In another embodiment, a chamber temperature distribution curve is obtained when the chamber temperature reaches a steady state, and based on the first or second temperature, the coil is controlled to move parallel along the central axis until the first or second temperature becomes equal to the temperature in the chamber temperature distribution curve, and it is determined that the center position of the coil has reached the center point of the chamber.

[0068] In the temperature control method for the semiconductor heat treatment apparatus according to this embodiment, two temperature measurement holes are installed in the chamber, and when the chamber temperature reaches a steady state, it is possible to determine whether the center position of the coil is offset from the center point of the chamber based on the first temperature detected by the first temperature sensor and / or the second temperature detected by the second temperature sensor, thereby determining whether the center point of the wafer is located at the highest temperature point. When the wafer is offset from the center position of the coil, the coil is moved so that the center position of the coil reaches the center point of the chamber, thereby ensuring that the center of the wafer coincides with the center of the coil during the processing process, the wafer is always positioned at the highest temperature point, and the uniformity of the wafer temperature is ensured.

[0069] In one embodiment, this embodiment provides a specific embodiment for determining whether the center position of the wafer coil is offset from the center point of the chamber based on a first temperature and a second temperature. It is determined whether the first temperature and the second temperature are equal, or whether the difference between them is within an allowable deviation range. If the first temperature and the second temperature are not equal, or if the difference between them exceeds the allowable deviation range, it is determined that the center position of the coil is offset from the center point of the chamber.

[0070] In one embodiment, this embodiment provides an embodiment that controls the translation of a coil along the central axis until the center position of the coil reaches the center point of the chamber, based on a first temperature and a second temperature. Specifically, this can be carried out by referring to the following steps (1) to (2).

[0071] In step (1), if the first temperature is greater than the second temperature, the coil is controlled to move in the first direction, which is the direction in which the second temperature measurement hole is located, until the first and second temperatures become equal.

[0072] If the first temperature is greater than the second temperature, it indicates that the temperature detected by the first temperature sensor is high and the center point of the coil is biased in the direction of the first temperature measurement hole. Therefore, the coil is controlled to be moved in parallel toward the direction of the second temperature measurement hole (i.e., toward the direction from the region where the first temperature measurement hole is located toward the region where the second temperature measurement hole is located) so that the first temperature and the second temperature become equal.

[0073] Using the chamber shown in Figure 2b as an example, when the first temperature is greater than the second temperature, the center point of the coil is close to the first temperature measurement hole 21 and is to the right of the center point of the chamber. Therefore, the coil is controlled to move in parallel toward the direction of the second temperature measurement hole, that is, to move the coil to the left, until the first and second temperatures become equal and the center point of the wafer coincides with the center point of the coil.

[0074] In step (2), if the first temperature is less than the second temperature, the coil is controlled to move in the second direction, which is the direction in which the first temperature measurement hole is located, until the first and second temperatures become equal.

[0075] If the first temperature is lower than the second temperature, it indicates that the temperature detected by the second temperature sensor is higher and the center point of the coil is close to the second temperature measurement hole. Therefore, the coil is controlled to move parallel to the direction of the first temperature measurement hole so that the first and second temperatures become equal.

[0076] Using the chamber shown in Figure 2b as an example, when the first temperature is lower than the second temperature, the center point of the coil is close to the second temperature measurement hole 22, and the center point of the coil is to the left of the center point of the chamber. Therefore, the coil is controlled to move in parallel toward the direction of the first temperature measurement hole 21, that is, to move the coil to the right, until the first and second temperatures become equal and the center point of the wafer coincides with the center point of the coil.

[0077] In one embodiment, to prove that the highest temperature point is at the center of the coil, the method according to this embodiment is performed in the following steps 1) ~ 2 ) further includes.

[0078] Step 1) calculates the skin depth of the chamber at a predetermined process temperature, obtains the AC current value of the coil, divides the chamber into multiple regions with the same number of coil turns based on the number of turns of the coil, and calculates the heat source intensity of each region of the chamber based on the skin depth and AC current value.

[0079] By analyzing the temperature field of the coil, the location of the highest temperature within the chamber is identified. First, the magnetic field strength of the chamber is analyzed. The formula for calculating the magnetic field strength acting on the chamber is as follows:

[0080]

number

[0081] In the formula, n is the number of turns of the coil, and Z0 is the length of the coil turns. The density of eddy currents acting on the inner surface of the chamber is as follows:

[0082]

number

[0083] In the formula, δ m0 Δ is the density of eddy currents on the chamber surface, Δ is the skin depth, and H m0 is the magnetic field strength, r is the radius of the measurement point, and r0 is the cylindrical radius of the chamber.

[0084] The formula for calculating epidermal depth is as follows:

[0085]

number

[0086] wherein, ω is the angular frequency (ω=2πf(rad / s), frequency f=4900Hz), μ is the magnetic permeability (μ=4π*10 7 ), and γ is the electrical conductivity (for example, it may be 83333S / m).

[0087] With the change of radius, the calculation formula for the eddy current density at the measured point is as follows.

[0088] [Math.]]

[0089] Considering the micro area ds on the radius r, the calculation formula for the eddy current passing through the micro area is as follows.

[0090] dI r =δ mr *dS (Equation 5)

[0091] The calculation formula for the power generated by eddy current is as follows.

[0092] [Math.]]

[0093] wherein, dR is the effective resistance value of the material for the eddy current passing through the micro area, and J is a conversion parameter (J=4.18cal / w).

[0094] The heat source intensity can be calculated based on the above Equation 5 and Equation 6. Based on the number of turns of the coil, the chamber is averagely divided into a plurality of regions, and the number of turns of the coil included in each region is the same. For example, when the number of turns of the coil is 30, if the chamber is divided into 10 regions, the number of turns of the coil in each region is 3; when the number of turns of the coil is 10, if the chamber is divided into 10 regions, the number of turns of the coil n in each region i =1. The winding length Z of the coil in each region iIf the value is 30 mm, the formula for calculating the heat source intensity of the i-th region of the chamber is as follows:

[0095]

number

[0096] In the formula, ρ is the resistivity of the chamber material, I is the alternating current flowing through the coil, and F i This is the heat source intensity for the i-th region.

[0097] Since the number of turns in the coils is the same in each region and the coil length is constant, simulation calculations show that the heat source intensity is the same in each region. Assuming the chamber thickness is 15 mm and the measurement point r = 0.085 m, referring to the schematic diagram of the heat source intensity distribution in each region of the chamber shown in Figure 5, we get F1 = F2 = F3 = ... = F10 = 3.9511 * 10 4 W / m 3 Therefore, it can be calculated that the heat source intensity is the same in each region within the chamber.

[0098] Step 2 In this step, the ambient temperatures at both ends of the chamber are obtained when the chamber temperature reaches a steady state. Based on the ambient temperature and the heat source intensity in each region, the chamber temperature in each region is calculated, and a temperature gradient distribution curve of the chamber is obtained.

[0099] The amount of heat in each region is calculated based on the heat source intensity in each region.

[0100] Q i =F*V i *t (Formula 8)

[0101] In the formula, Q i V is the heat quantity in the i-th region. i is the volume of the i-th region, and t is the heat generation time.

[0102] Assuming no external interference and a stable heat source intensity within the chamber, the energy within the chamber is uniform and consistent. The influence of ambient temperature on the temperature field within the chamber must be considered, and the influence of the chamber environment on the chamber can be simulated using the following equation 9 to calculate heat loss. Assuming that the ambient temperature and the temperature inside the chamber are in equilibrium, the energy before and after the chamber... environment The temperature stabilizes, and the amount of heat generated by the chamber and the chamber environment The amount of heat absorbed becomes equal to the amount of heat absorbed.

[0103]

number

[0104] In the equation, Q is the change in ambient heat quantity of the chamber due to thermal radiation, σ is Stokes' constant, ε is the thermal emissivity of the chamber surface, A is the internal surface area of ​​the chamber, T2 is the ambient temperature, and T1 is the chamber temperature after a steady state is reached (i.e., the temperature of the inner surface of the chamber).

[0105] Assuming an exothermic time t = 1 s, the formula for calculating the chamber temperature is as follows:

[0106]

number

[0107] In one specific embodiment, this embodiment provides an embodiment for calculating the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region. Specifically, this can be carried out by referring to steps 1 to 3 below.

[0108] In Step 1, starting with the first region at any one end of the chamber, the chamber temperature of the first region when the machining process reaches a steady state is calculated based on the heat source intensity and ambient temperature of the first region.

[0109] Starting from the first region at one end of the chamber means, taking the chamber in Figure 2b as an example, that if the number of turns of the coil is 10, the chamber can be divided into 10 regions, and starting from the first region at the leftmost end of the chamber in Figure 2b. The formula for calculating the chamber temperature of the first region is as follows:

[0110]

number

[0111] In the formula, T 11 σ is the chamber temperature of the first region, F1 is the heat source intensity of the first region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the internal surface area of ​​the chamber, and T 12 V1 is the ambient temperature corresponding to the first region (i.e., the ambient temperature at both ends of the chamber, which can actually be detected by a temperature measuring device), and V1 is the volume of the first region.

[0112] In step 2, the chamber temperature of the first region is taken as the ambient temperature of the next adjacent region. Based on the ambient temperature of the next region and the heat source intensity of the next region, the chamber temperature of the next region when the processing process reaches a steady state is calculated until the chamber temperature of the region where the center point of the chamber is located is determined.

[0113] If the chamber temperature of the first region is taken as the ambient temperature of the next adjacent region, then T 22 =T 11 Therefore, the formula for calculating the chamber temperature in the next region (i.e., the second region) is as follows:

[0114]

number

[0115] In the formula, T 21 This is the chamber temperature in the second region, and F2 is 2 This is the heat source intensity in the second region, T 22V2 is the ambient temperature corresponding to the second region (i.e., the chamber temperature of the first region is set to the ambient temperature of the adjacent second region), and V2 is the volume of the second region.

[0116] The chamber temperature of the second region is taken as the ambient temperature of the adjacent third region, and the chamber temperatures of each region from the first region to the region where the center point of the chamber is located are calculated sequentially in the same manner.

[0117]

number

[0118] In the formula, T i1 F is the chamber temperature of the i-th region. i σ is the heat source intensity of the i-th region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the internal surface area of ​​the chamber, and T i2 This is the ambient temperature corresponding to the i-th region, and V i This is the volume of the i-th region.

[0119] In step 3, the chamber temperature is obtained for each region from the region where the center point is located to the other end of the chamber, based on the temperature symmetry of each chamber from the first region at one end of the chamber to the region where the center point is located.

[0120] Due to the symmetry of the chamber temperature, the chamber temperature curve diagram for the other symmetrical region can be obtained from the chamber temperature curve diagram from the first region to the region where the center point of the chamber is located.

[0121] When the chamber interior reaches a stable state, referring to the chamber temperature distribution curve diagram for each region of the chamber shown in Figure 3, in the curve diagram of Figure 3, the horizontal axis is the region number and the vertical axis is the chamber temperature (unit is k). As can be seen from Figure 3, the temperature model after the chamber reaches a steady state is an axisymmetric nonlinear distribution, and the highest temperature point is at the center point of the coil, i.e., the center point of the chamber and wafer. Therefore, if the two temperature measurement holes are distributed equally at intervals in the center point region of the chamber and are axially symmetric, the temperatures measured by the two temperature sensors will be equal when the center point of the coil coincides with the center point of the chamber.

[0122] In one embodiment, this embodiment provides two embodiments for determining whether the center position of the coil is offset from the center point of the chamber based on a first temperature and / or a second temperature.

[0123] In one embodiment, the region where the first temperature measurement hole is located in the chamber is obtained and defined as the first installation region. The chamber temperature corresponding to the first installation region in the temperature gradient distribution curve is identified and defined as the first target temperature. It is determined whether the first temperature and the first target temperature are equal, and if they are not equal, it is determined that the center position of the coil is offset from the center point of the chamber.

[0124] The installation position of the temperature measurement hole in the chamber does not normally change, and the region where the first temperature measurement hole is located is acquired and designated as the first installation region. The chamber temperature corresponding to the first installation region in the temperature gradient distribution curve, that is, the temperature that the first temperature sensor should theoretically detect when the center point of the coil coincides with the center point of the chamber when the chamber temperature reaches a steady state, is identified and designated as the first target temperature. If the first temperature and the first target temperature are equal, it is determined that the center position of the coil has not shifted from the center point of the chamber and the wafer is at the highest temperature point.

[0125] In another embodiment, the region in the chamber where the second temperature measurement hole is located is obtained and designated as the second installation region. The chamber temperature corresponding to the second installation region in the temperature gradient distribution curve is identified and designated as the second target temperature. It is determined whether the second temperature and the second target temperature are equal, and if they are not equal, it is determined that the center position of the coil is offset from the center point of the chamber.

[0126] The region where the second temperature measurement hole is located is acquired and designated as the second installation region. The chamber temperature corresponding to the second installation region in the temperature gradient distribution curve, i.e., the temperature that the second temperature sensor should theoretically detect when the center point of the coil coincides with the center point of the chamber when the chamber temperature reaches a steady state, is identified and designated as the second target temperature. If the second temperature and the second target temperature are equal, it is determined that the center position of the coil has not shifted from the center point of the chamber and the wafer is at the highest temperature point.

[0127] In one embodiment, the semiconductor heat treatment apparatus according to this embodiment further includes a drive member connected to a coil and driving the coil to move in parallel. This embodiment provides two embodiments for controlling the coil to move in parallel along a central axis until the center position of the coil reaches the center point of the chamber, based on a first temperature and / or a second temperature, and can be specifically carried out by referring to Embodiment 1 and Embodiment 2 below.

[0128] Embodiment 1 Based on the first target temperature and the first temperature, the amount and direction of the coil's translation are calculated. Based on the amount and direction of translation, the drive member is controlled to rotate, driving the coil to translate until its center position coincides with the center point of the chamber.

[0129] If the first temperature currently detected by the first temperature sensor is greater than the first target temperature, the center point of the coil is close to the first temperature measurement hole, indicating that the temperature detected by the first temperature sensor is higher than the first target temperature that should be detected if the coil's center is not shifted. Therefore, the coil is controlled to move in parallel toward the direction of the second temperature measurement hole (i.e., toward the second temperature measurement hole from the center point of the chamber). The amount of parallel movement correlates with the difference between the first temperature and the first target temperature, with the larger the difference, the larger the amount of parallel movement. Conversely, if the first temperature is greater than the first target temperature... the goal If the temperature is lower than the target temperature, the center point of the coil is close to the second temperature measurement hole, which indicates that the temperature detected by the first temperature sensor is lower than the first target temperature that should be detected if the center of the coil is not shifted. Therefore, the coil is controlled to be moved in parallel toward the direction of the first temperature measurement hole (i.e., the direction from the center point of the chamber toward the first temperature measurement hole). The amount of parallel movement is the first the goal The amount of translation is correlated with the difference between the temperature and the first temperature, and the larger the difference, the greater the amount of translation.

[0130] Embodiment 2 Based on the second target temperature and the second temperature, the amount and direction of the coil's translation are calculated, and based on the amount and direction of translation, the drive member is controlled to rotate, driving the coil to translate until its center position coincides with the center point of the chamber.

[0131] If the second temperature currently detected by the second temperature sensor is greater than the second target temperature, the center point of the coil is close to the second temperature measurement hole and far from the first temperature measurement hole. This indicates that the second temperature detected by the second temperature sensor is higher than the second target temperature that should be detected if the coil's center were not shifted. Therefore, the coil is controlled to be moved in parallel toward the direction of the first temperature measurement hole. The amount of parallel movement is the second temperature and the second target temperature. the goalThe amount of parallel movement correlates with the temperature difference, and the larger the difference, the larger the amount of parallel movement. Conversely, if the second temperature is lower than the second target temperature, the center point of the coil is close to the first temperature measurement hole and far from the second temperature measurement hole. This indicates that the second temperature detected by the second temperature sensor is lower than the second target temperature that should be detected if the center of the coil is not shifted, so the coil is controlled to be parallel moved toward the direction of the second temperature measurement hole. The amount of parallel movement is second the goal The amount of translation is correlated with the difference between the first temperature and the second temperature, and the larger the difference, the greater the amount of translation.

[0132] The temperature control method for the semiconductor heat treatment apparatus according to this embodiment adjusts and shifts the coil based on the temperature distribution curve in the chamber and the temperature detected by two temperature sensors, ensuring that the highest temperature point at the center of the coil overlaps with the center of the wafer, thereby guaranteeing temperature uniformity during wafer growth. Chamber temperature control is easy, calculation speed is fast, and temperature adjustment efficiency is improved. By detecting the temperature in the chamber using two temperature sensors, temperature measurement can be performed more effectively and reliably, and the positions of the two temperature measurement holes can be used as criteria for determining the position adjustment of the coil, thereby guaranteeing temperature uniformity of the wafer.

[0133] The method according to this embodiment has the same implementation principle and technical effects as the previously described embodiment. To simplify the explanation, points not described in the method embodiment can be referenced to the corresponding content in the previously described apparatus embodiment.

[0134] Embodiments of the present invention provide a computer-readable medium storing computer-executable instructions. When these computer-executable instructions are called and executed by a processor, they cause the processor to implement the method described in the embodiment.

[0135] For the convenience and simplicity of this description, and so that those skilled in the art can clearly understand it, the specific operating process of the system described above can be found by referring to the corresponding process in the previously mentioned embodiment, and is therefore omitted here.

[0136] The computer program product for the temperature control method of a semiconductor heat treatment apparatus according to an embodiment of the present application includes a computer-readable storage medium in which program code is stored, and the instructions contained in the program code are used to execute the method described in the embodiment described above. For specific implementations, please refer to the embodiment of the method, and the explanation is omitted here.

[0137] Furthermore, in the description of the embodiments of this application, unless otherwise clearly specified and limited, the terms “attachment,” “connection,” and “connection” should be understood in a broad sense, and may include, for example, a fixed connection, a removable connection, an integral connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, or internal communication between two parts. A person skilled in the art will be able to understand the specific meaning of the above terms in this application depending on the specific circumstances.

[0138] The above functions may be implemented in the form of a software function unit and stored on a single computer-readable storage medium when sold or used as an independent product. Based on this understanding, an essential or prior art contribution to the technical means of the present application, or a part thereof, may be implemented in the form of a software product, which is stored on a storage medium containing a number of instructions for causing a single computer device (which may be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present application. The aforementioned storage medium includes a variety of media capable of storing program code, such as U disks, removable hard disks, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0139] Furthermore, in the description of this application, the directions or positional relationships indicated by terms such as "center," "up," "down," "left," "right," "vertical," "horizontal," "inside," and "outside" are based on the directions or positional relationships shown in the drawings and are merely for the purpose of easily explaining and simplifying the description of this application. They do not indicate or suggest that the shown device or component has a specific direction or must be configured and operate in a specific direction, and should not be understood as limiting this application. In addition, the terms "first," "second," and "third" are merely for explanatory purposes and should not be understood as indicating or suggesting relative importance.

[0140] The above-described embodiments are merely specific embodiments of the present application and are intended to illustrate the technical means of the present application, not to limit them, and the scope of protection of the present application is not limited thereto. Although the present application has been described in detail with reference to the above-described embodiments, those skilled in the art can still easily modify, change, or substitute equivalent technical means described in the above-described embodiments within the technical scope disclosed in the present application. However, it should be understood that these modifications, changes, or substitutions do not cause the essence of the corresponding technical means to deviate from the spirit and scope of the technical means of the embodiments of the present application, and should be included within the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. It includes a coil, a chamber, a first temperature sensor, a second temperature sensor, and a temperature controller. The chamber is used to place the wafer to be processed, the coil is installed so as to surround the chamber and provides a heat field to the chamber, the chamber is provided with a first temperature measurement hole and a second temperature measurement hole, the first temperature measurement hole and the second temperature measurement hole are distributed in the central region of the chamber, The first temperature sensor detects the temperature of the chamber through the first temperature measurement hole and sets it as the first temperature. The second temperature sensor detects the temperature of the chamber through the second temperature measuring hole and sets it as the second temperature. The temperature controller acquires the first temperature and the second temperature, and when the temperature of the chamber reaches a steady state, it determines, based on the first temperature and / or the second temperature, whether the center position of the coil is offset from the center point of the chamber, and if it is offset, it controls the coil to move parallel along the central axis, based on the first temperature and / or the second temperature, until the center position of the coil reaches the center point of the chamber. A semiconductor heat treatment apparatus characterized by the following:

2. The temperature controller further determines whether the first temperature and the second temperature are equal, and if the first temperature and the second temperature are not equal, it determines that the center position of the coil is offset from the center point of the chamber. Based on the first and second temperatures, the coil is controlled to move parallel to the central axis until it is determined that the first and second temperatures are equal and the center position of the coil has reached the center point of the chamber. The semiconductor heat treatment apparatus according to feature 1.

3. The chamber comprises multiple regions, each having the same number of coil turns, and the temperature controller stores a temperature gradient distribution curve when the chamber temperature reaches a steady state, and the temperature gradient distribution curve represents the chamber temperature corresponding to each region. The temperature controller further acquires the region in the chamber where the first temperature measurement hole is located and defines it as the first installation region, identifies the chamber temperature corresponding to the first installation region in the temperature gradient distribution curve and defines it as the first target temperature, determines whether the first temperature and the first target temperature are equal, and if the first temperature and the first target temperature are not equal, determines that the center position of the coil is offset from the center point of the chamber. and / or, The temperature controller further acquires the region in the chamber where the second temperature measurement hole is located and defines it as a second installation region, identifies the chamber temperature corresponding to the second installation region in the temperature gradient distribution curve and defines it as a second target temperature, determines whether the second temperature and the second target temperature are equal, and if the second temperature and the second target temperature are not equal, determines that the center position of the coil is offset from the center point of the chamber. The semiconductor heat treatment apparatus according to feature 1.

4. The system further includes a drive member connected to the coil and driven to move the coil in parallel, The temperature controller further calculates the amount and direction of translation of the coil based on the first target temperature and the first temperature, and controls the drive member based on the amount and direction of translation to drive the coil and move it in parallel until the center point of the coil coincides with the center point of the chamber. and / or, The temperature controller further calculates the amount and direction of translation of the coil based on the second target temperature and the second temperature, and controls the drive member based on the amount and direction of translation to drive and translate the coil until the center point of the coil coincides with the center point of the chamber. The semiconductor heat treatment apparatus according to feature 3.

5. The temperature controller is a programmable logic controller, and the programmable logic controller is communicated to the first temperature sensor, the second temperature sensor, and the inductive power supply for the coil, respectively. The semiconductor heat treatment apparatus according to feature 1.

6. A method for controlling the temperature of a semiconductor processing apparatus, used in a semiconductor heat processing apparatus according to any one of claims 1 to 5, The steps include obtaining a first temperature detected by the first temperature sensor and obtaining a second temperature detected by the second temperature sensor, When the temperature of the chamber reaches a steady state, the step of determining whether the center position of the coil is offset from the center point of the chamber based on the first temperature and / or the second temperature, If misaligned, the step of controlling the coil to move parallel along the central axis based on the first temperature and / or the second temperature until the center position of the coil reaches the center point of the chamber, A method for controlling the temperature of a semiconductor heat treatment apparatus, characterized by the features described herein.

7. The step of determining whether the center position of the coil is offset from the center point of the chamber based on the first temperature and / or the second temperature is: The process includes determining whether the first temperature and the second temperature are equal, and if the first temperature and the second temperature are not equal, determining that the center position of the coil is offset from the center point of the chamber. and / or, The step of controlling the coil to move in parallel along the central axis until the center position of the coil reaches the center point of the chamber, based on the first temperature and / or the second temperature, If the first temperature is greater than the second temperature, the coil is controlled to move in parallel toward the first direction, which is the direction in which the second temperature measuring hole is located, until the first temperature and the second temperature become equal. If the first temperature is less than the second temperature, the method includes controlling the coil to be moved in a second direction, which is the direction in which the first temperature measuring hole is located, until the first temperature and the second temperature become equal. The temperature control method for a semiconductor heat treatment apparatus according to feature 6.

8. The steps include: calculating the skin depth of the chamber at a predetermined process temperature; obtaining the AC current value of the coil; dividing the chamber into multiple regions with the same number of coil turns based on the number of turns of the coil; and calculating the heat source intensity of each region of the chamber based on the skin depth and the AC current value. The method further includes the steps of obtaining the ambient temperatures at both ends of the chamber when the chamber temperature reaches a steady state, calculating the chamber temperature in each region based on the ambient temperature and the heat source intensity of each region, and obtaining a temperature gradient distribution curve of the chamber. The temperature control method for a semiconductor heat treatment apparatus according to feature 6.

9. The step of calculating the chamber temperature of each region based on the ambient temperature and the heat source intensity of each region is: A step of calculating the chamber temperature of the first region when the processing process reaches a steady state, starting from the first region at any one end of the chamber, based on the heat source intensity and the ambient temperature of the first region, The steps include: setting the chamber temperature of the first region as the ambient temperature of the adjacent next region; calculating the chamber temperature of the next region when the processing process reaches a steady state based on the ambient temperature of the next region and the heat source intensity of the next region; and continuing until the chamber temperature of the region where the center point of the chamber is located is calculated. The process includes the step of obtaining the chamber temperature of each region from the region where the center point of the chamber is located to the other end of the chamber, based on the temperature symmetry of each chamber from the first region to the region where the center point is located. The temperature control method for a semiconductor heat treatment apparatus according to feature 8.

10. The formula for calculating the chamber temperature is: [Math 1] And in the formula, T ｉ１ This is the chamber temperature of the i-th region, and F ｉ σ is the heat source intensity of the i-th region, σ is the Stokes constant, ε is the thermal emissivity of the chamber surface, A is the internal surface area of ​​the chamber, and T ｉ２ This is the ambient temperature corresponding to the i-th region, and V ｉ This is the volume of the i-th region. The temperature control method for a semiconductor heat treatment apparatus according to feature 9.

11. The step of determining whether the center position of the coil is offset from the center point of the chamber based on the first temperature and / or the second temperature is: The steps include: obtaining the region in the chamber where the first temperature measurement hole is located and defining it as the first installation region; identifying the chamber temperature corresponding to the first installation region in the temperature gradient distribution curve and defining it as the first target temperature; determining whether the first temperature and the first target temperature are equal; and if the first temperature and the first target temperature are not equal, determining that the center position of the coil is offset from the center point of the chamber. and / or, The steps include: obtaining the region in the chamber where the second temperature measurement hole is located and defining it as the second installation region; identifying the chamber temperature corresponding to the second installation region in the temperature gradient distribution curve and defining it as the second target temperature; determining whether the second temperature and the second target temperature are equal; and if the second temperature and the second target temperature are not equal, determining that the center position of the coil is offset from the center point of the chamber. The temperature control method for a semiconductor heat treatment apparatus according to feature 8.

12. The semiconductor heat treatment apparatus further includes a drive member connected to the coil and driving the coil to move in parallel, and the step of controlling the coil to move in parallel along the central axis until the center position of the coil reaches the center point of the chamber, based on the first temperature and / or second temperature, The steps include: calculating the amount and direction of translation of the coil based on the first target temperature and the first temperature; controlling the drive member based on the amount and direction of translation to drive and translate the coil until the center position of the coil coincides with the center point of the chamber; and / or, The process includes the steps of calculating the amount and direction of translation of the coil based on the second target temperature and the second temperature, and controlling the drive member based on the amount and direction of translation to drive and translate the coil until the center position of the coil coincides with the center point of the chamber, The temperature control method for a semiconductor heat treatment apparatus according to feature 11.

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