Bonding equipment

Abstract

To improve bonding reliability.SOLUTION: A bonding device 1 comprises: a conveyance mechanism 20 which conveys a substrate SB; a bonding tool 43 which bonds an electronic component CH onto the substrate SB; and a conveyance prevention path 100 which extends along the conveyance mechanism 20 and has a wall part 110 surrounding the conveyance mechanism 20. The conveyance prevention path 100 has: an inlet port 115 for introducing the substrate SB; an opening part 117 which allows the bonding tool 43 and the substrate SB to come closer to each other or to go away from each other; and an outlet port 116 for discharging the substrate SB onto which the electronic component CH is bonded. A furnace 100 further has: a gas inlet port 130 for introducing antioxidation gas into the inside of the conveyance prevention path 100; and fine pore parts 150, 160 which generate pressure loss in the antioxidation gas introduced from the gas inlet port 130 into the inside of a furnace wall 110.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a bonding apparatus.

Background Art

[0002] The bonding apparatus bonds an electronic component to a substrate via a bonding member, for example, in a forming gas atmosphere.

[0003] For example, Patent Document 1 discloses a cover for a heater rail in which a tunnel is formed to cover a heat block, and a base material is conveyed through the tunnel and heated. The heater rail cover is provided with an opening for allowing access to the base material. The heater rail cover is provided with a gas curtain formed of an antioxidant gas that covers the opening.

Prior Art Literature

Patent Literature

[0004]

Patent Document 1

Summary of the Invention

Problem to be Solved by the Invention

[0005] However, with the bonding apparatus described in Patent Document 1, it is difficult to sufficiently suppress the introduction of oxidizing gas into the heating furnace, and the substrate, electronic component, and bonding member may oxidize, which may reduce the reliability of bonding.

[0006] The present invention has been made in view of such circumstances, and an object of the present invention is to provide a bonding apparatus capable of improving the reliability of bonding.

Means for Solving the Problem

[0007] A bonding apparatus according to one aspect of the present invention comprises a transport mechanism for transporting a substrate, a bonding tool for bonding electronic components to the substrate, and an oxidation prevention passage extending along the transport mechanism and having a wall portion surrounding the transport mechanism, wherein the oxidation prevention passage has an inlet for introducing the substrate, an opening that allows the bonding tool and the substrate to approach or separate, and an outlet for leading out the substrate on which the electronic components have been bonded, and further comprises a gas inlet for introducing an oxidation prevention gas into the inside of the wall portion, and a pore portion that creates a pressure loss in the oxidation prevention gas introduced into the inside of the wall portion from the gas inlet. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a bonding apparatus that can improve the reliability of bonding. [Brief explanation of the drawing]

[0009] [Figure 1] This is a perspective view showing a bonding apparatus according to the first embodiment of the present invention. [Figure 2] This is a plan view of a heating furnace according to the first embodiment of the present invention. [Figure 3] This is a cross-sectional view of a heating furnace according to the first embodiment of the present invention. [Figure 4] This is a flowchart showing a bonding method according to the first embodiment of the present invention. [Figure 5] This figure shows the bonding process in progress. [Figure 6] This figure shows the bonding process in progress. [Figure 7] This figure shows the bonding process in progress. [Figure 8] This figure shows the bonding process in progress. [Figure 9] This figure shows the bonding process in progress. [Figure 10] This is a cross-sectional view of a heating furnace according to a second embodiment of the present invention. [Figure 11] This is a perspective view showing a bonding apparatus according to a third embodiment of the present invention. DESCRIPTION OF EMBODIMENTS

[0010] Embodiments of the present invention are described below. In the following description of the drawings, identical or similar components are denoted by identical or similar reference signs. The drawings are illustrative, and the dimensions and shapes of each part are schematic. The technical scope of the present invention should not be construed as being limited to the embodiments described below.

[0011] <FIRST EMBODIMENT> <<Bonding Apparatus>> First, the configuration of a bonding apparatus 1 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. 1 is a perspective view showing the bonding apparatus according to the first embodiment of the present invention. FIG. 2 is a plan view of a heating furnace according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of the heating furnace according to the first embodiment of the present invention.

[0012] The bonding apparatus 1 bonds an electronic component CH to a substrate SB via a bonding member BM. The substrate SB has a pair of main surfaces SBa and SBb, and the main surface SBa is a bonding surface on which the electronic component CH is bonded.

[0013] The substrate SB is, for example, a copper (Cu) alloy lead frame, but is not limited thereto. The substrate SB may be, for example, an iron (Fe) alloy lead frame, a ceramic substrate, a semiconductor substrate, or the like.

[0014] The electronic component CH is, for example, a semiconductor chip (also referred to as a "die"), but is not limited thereto. The electronic component CH may be, for example, various types of active components or passive components.

[0015] The bonding member BM is, for example, a gold-tin (Au-Sn) based eutectic alloy, but is not limited thereto. The bonding member BM may be, for example, a eutectic alloy such as a gold-silicon (Au-Si) based alloy, solder, an organic adhesive, or an inorganic adhesive.

[0016] Before bonding the electronic component CH to the substrate SB, the bonding member BM is provided, for example, on the electronic component CH side, but is not limited thereto. Before bonding the electronic component CH to the substrate SB, the bonding member BM may be provided on the substrate SB side, or a part of the bonding member BM may be provided on the electronic component CH side and another part of the bonding member BM may be provided on the substrate SB side. In addition, the substrate SB and the electronic component CH before being carried into the heating furnace 100 described later are separated from each other, for example, but the electronic component CH may be placed or temporarily bonded to the substrate SB to be carried into the heating furnace 100.

[0017] The bonding apparatus 1 bonds the electronic component CH to the substrate SB in an antioxidant gas atmosphere. The antioxidant gas is, for example, a forming gas obtained by mixing a reducing gas such as hydrogen into an inert gas such as nitrogen, but is not limited thereto. The antioxidant gas may be, for example, an inert gas or a reducing gas.

[0018] As shown in FIG. 1, the bonding apparatus 1 includes a heating furnace 100, a conveyance mechanism 20, an imaging unit 30, a bonding head 40, and an electronic component supply unit 50. Here, for convenience, three orthogonal axes including an X axis, a Y axis, and a Z axis are shown in FIG. 1. The X-axis direction is the direction in which the conveyance mechanism 20 conveys the substrate SB, and the substrate SB is conveyed from the X-axis negative direction side toward the X-axis positive direction side. The Y-axis direction is a direction that defines, together with the X-axis direction, the plane along the pair of main surfaces SBa and SBb of the substrate SB conveyed by the conveyance mechanism 20. The Y-axis direction is the direction in which the heating furnace 100 and the electronic component supply unit 50 are arranged. The Z-axis direction is the direction in which the pair of main surfaces SBa and SBb of the substrate SB conveyed by the conveyance mechanism 20 overlap, and is the direction in which the bonded substrate SB and the electronic component CH are arranged. The same applies to the X axis, Y axis, and Z axis attached to each figure from FIG. 2 onward. In the following description, a plan view from the Z-axis negative direction side is simply referred to as "plan view". In addition, the X-axis negative direction side may be referred to as "front", the X-axis positive direction as "rear", the Z-axis negative direction side as "upper", and the Z-axis positive direction side as "lower", but this does not limit the orientation or the like of the bonding apparatus 1.

[0019] The heating furnace 100 is an example of an oxidation prevention passage. The heating furnace 100 heats the joining members in an oxidation prevention gas atmosphere. The heating furnace 100 has a furnace wall 110, which is an example of a wall surrounding the conveying mechanism 20, a gas inlet 130, a partition wall 140, a primary mesh section 150, a secondary mesh section 160, a gas discharge section 170, and a heater 180. In this embodiment, a configuration is described that includes a mesh section (including the primary mesh section 150 and the secondary mesh section 160) having a mesh structure as an example of a pore section that causes pressure loss in the oxidation prevention gas, but the pore section is not limited to a mesh structure and may be made of perforated metal, for example. Also, the number of holes in the pore section is not particularly limited, and the shape of the holes is not limited to rectangles but may be round or polygonal.

[0020] The furnace wall 110 is an outer wall that creates an oxidation-preventive gas atmosphere inside the furnace wall 110, which is the space where bonding is performed. The furnace wall 110 is provided in a cylindrical shape along the conveying mechanism 20. The furnace wall 110 has a top wall 111, side walls 112, 113, a bottom wall 114, an inlet 115, an outlet 116, and an opening 117.

[0021] The top wall 111 is a wall portion that faces the main surface SBa of the substrate SB being transported by the transport mechanism 20, with a gap between them. The side wall 112 is a wall portion that connects the end of the top wall 111 on the negative Y-axis side to the end of the bottom wall 114 on the negative Y-axis side, via a partition wall 142, which will be described later. The side wall 113 is a wall portion that connects the end of the top wall 111 on the positive Y-axis side to the end of the bottom wall 114 on the positive Y-axis side, via a partition wall 143, which will be described later. The bottom wall 114 is a wall portion that faces the main surface SBb of the substrate SB being transported by the transport mechanism 20, with a gap between them. The top wall 111, side walls 112, 113 and bottom wall 114 have a longitudinal direction that extends in the X-axis direction.

[0022] Furthermore, partition wall 142 and side wall 112 are collectively referred to as the first side wall of the furnace wall 110. Partition wall 143 and side wall 113 are collectively referred to as the second side wall of the furnace wall 110. The first and second side walls are a pair of side walls connecting the top wall 111 and the bottom wall 114 of the furnace wall 110. The pair of side walls extend from the end of the top wall 111 in the Y-axis direction toward the bottom wall 114 along the Z-axis direction, which intersects with the main surface SBa of the substrate SB. Also, the pair of side walls extend from the end of the bottom wall 114 in the Y-axis direction toward the top wall 111 along the Z-axis direction. The first side wall is the side wall of the pair of side walls located on the side of the electronic component supply unit 50.

[0023] The inlet 115 and outlet 116 are a pair of open ends of a cylindrical furnace wall 110. The inlet 115 is the open end of the furnace wall 110 on the negative X-axis side, and the outlet 116 is the open end of the furnace wall 110 on the positive X-axis side. The substrate SB to which the electronic component CH is bonded is introduced into the heating furnace 100 through the inlet 115. The substrate SB with the bonded electronic component CH is discharged from the heating furnace 100 through the outlet 116.

[0024] The opening 117 is an opening for the bonding tool 43, which will be described later, to approach or move away from the substrate SB. The opening 117 is a through-hole that penetrates the top wall 111 in the Z-axis direction. The opening 117 is provided in the shape of a slit with a longitudinal direction extending in the Y-axis direction. The opening 117 is also used by the imaging unit 33, which will be described later, to image the substrate SB or the electronic component CH bonded to the substrate SB.

[0025] The gas inlet 130 introduces an antioxidant gas into the inside of the furnace wall 110. The gas inlet 130 has four gas inlets 131, 132, 133, and 134. Gas inlet 131 is an example of a first gas inlet, gas inlet 132 is an example of a second gas inlet, gas inlet 133 is an example of a third gas inlet, and gas inlet 134 is an example of a fourth gas inlet.

[0026] Each of the gas inlets 131 to 134 is configured to allow for independent adjustment of the amount of antioxidant gas introduced. Specifically, although not shown in the diagram, each of the pipes connected to the gas inlets 131 to 134 is equipped with a flow meter, a flow control valve, etc.

[0027] As shown in Figures 2 and 3, gas inlets 131 to 134 are connected to the top wall 111. The gas inlets 131 to 134 are aligned in the X-axis direction at the center of the top wall 111 in the Y-axis direction. Gas inlet 131 is located between inlet 115 and opening 117. Gas inlet 132 is located between gas inlet 131 and opening 117. Gas inlet 133 is located between opening 117 and outlet 116. Gas inlet 134 is located between gas inlet 133 and outlet 116. The area of ​​each gas inlet 131 to 134 in plan view (hereinafter simply referred to as "area") is, for example, approximately equal to each other.

[0028] The number of gas inlets is not limited to four. For example, one gas inlet may be provided on both the inlet and outlet sides of the opening, and three or more gas inlets may be provided. Furthermore, the number of gas inlets provided on the inlet and outlet sides of the opening may differ. For example, since external oxidizing gases are easily brought into the inside of the furnace wall when introducing substrates into the heating furnace, more gas inlets may be provided on the inlet side than on the outlet side. Gas inlets are not limited to those connected to the top wall. For example, gas inlets may be connected to a partition wall, as described later, or to the side or bottom walls of the furnace wall.

[0029] The partition wall 140 divides the space below the top wall 111 in the XY plane. The partition wall 140 has partition walls 142, 143, 144, 145, 146, 147, 148, and 149. Partition walls 142, 143, 144, and 149 are examples of outer partition walls that separate the antioxidant gas introduced from the gas inlet 130 from the outside air. Partition walls 145, 146, 147, and 148 are examples of inner partition walls that separate the antioxidant gases introduced from the gas inlets 131 to 134 within the space enclosed by partition walls 142, 143, 144, and 149.

[0030] As shown in Figures 2 and 3, the upper ends of partition walls 142 to 149 are connected to the top wall 111. Partition wall 142 is connected to the negative Y-axis end of the top wall 111 and extends from the negative X-axis end to the positive X-axis end of the top wall 111. Partition wall 143 is connected to the positive Y-axis end of the top wall 111 and extends from the negative X-axis end to the positive X-axis end of the top wall 111. Side wall 112 is connected to the lower end of partition wall 142, and side wall 113 is connected to the lower end of partition wall 143.

[0031] Partition wall 144 is connected to the negative X-axis end of the top wall 111 and extends from the negative Y-axis end to the positive Y-axis end of the top wall 111. Partition wall 145 is connected to the portion of the top wall 111 between the gas inlet 131 and the gas inlet 132 and extends from the negative Y-axis end to the positive Y-axis end of the top wall 111. Partition wall 146 is connected to the portion of the top wall 111 between the gas inlet 132 and the opening 117 and extends from the negative Y-axis end to the positive Y-axis end of the top wall 111. Partition wall 147 is connected to the portion of the top wall 111 between the opening 117 and the gas inlet 133 and extends from the negative Y-axis end to the positive Y-axis end of the top wall 111. Partition wall 148 is connected to the portion of the top wall 111 between gas inlets 133 and 134, and extends from the negative Y-axis end to the positive Y-axis end of the top wall 111. Partition wall 149 is connected to the positive X-axis end of the top wall 111, and extends from the negative Y-axis end to the positive Y-axis end of the top wall 111. One end of partition walls 144 to 149 is connected to partition wall 142, and the other end of partition walls 144 to 149 is connected to partition wall 143.

[0032] The first space below the gas inlet 131 is enclosed in the XY plane by partition walls 142, 143, 144, and 145. The second space below the gas inlet 132 is enclosed in the XY plane by partition walls 142, 143, 145, and 146. The opening 117 is enclosed in the XY plane by partition walls 142, 143, 146, and 147. The third space below the gas inlet 133 is enclosed in the XY plane by partition walls 142, 143, 147, and 148. The fourth space below the gas inlet 134 is enclosed in the XY plane by partition walls 142, 143, 148, and 149. Partition walls 142, 143, 144, and 145 are examples of first partition walls that demarcate the first space. Partitions 142, 143, 145, and 146 are examples of second partitions that demarcate the second space. Partitions 142, 143, 147, and 148 are examples of third partitions that demarcate the third space. Partitions 142, 143, 148, and 149 are examples of fourth partitions that demarcate the fourth space.

[0033] The volume of the first space enclosed by partitions 142, 143, 144, and 145 is greater than the volume of the second space enclosed by partitions 142, 143, 145, and 146. The volume of the fourth space enclosed by partitions 142, 143, 148, and 149 is greater than the volume of the third space enclosed by partitions 142, 143, 147, and 148. The volume of the first space is approximately equal to the volume of the fourth space, and the volume of the second space is approximately equal to the volume of the third space.

[0034] Each of the first to fourth spaces is connected to one gas inlet, but this is not limited to that. Each of the first to fourth spaces may be connected to two or more gas inlets. Furthermore, the number of gas inlets connected to each of the first to fourth spaces may differ.

[0035] The primary mesh section 150 creates a pressure loss in the antioxidant gas introduced into the furnace wall 110 from the gas inlet 130. Hereinafter, the pressure loss of the antioxidant gas produced by the primary mesh section 150 will be referred to as the "primary pressure loss." The primary mesh section 150 is located inside the furnace wall 110, away from the gas inlet 130. The area of ​​the primary mesh section 150 is larger than the area of ​​the gas inlet 130. The primary mesh section 150 is, for example, a metal mesh with an opening ratio of 10% to 60% and an opening diameter (mesh size) of 0.010 mm to 0.500 mm.

[0036] Furthermore, the opening ratio and opening diameter of the primary mesh portion 150 are not limited to those described above, as long as the primary mesh portion 150 can generate a pressure loss to the oxidation-preventing gas. However, since the primary mesh portion 150 is heated by radiant and conductive heat from the heater 180, it is preferable that the material of the primary mesh portion 150 be a metal with good heat resistance. The material of the primary mesh portion 150 may be flame-retardant fiber or ceramic, as long as it has sufficient heat resistance.

[0037] The primary mesh section 150 has primary mesh sections 151, 152, 153, and 154. The primary mesh sections 151 to 154 have main surfaces extending in the XY plane direction and through holes penetrating in the Z axis direction. Primary mesh section 151 is an example of a primary mesh section in the first mesh section. Primary mesh section 152 is an example of a primary mesh section in the second mesh section. Primary mesh section 153 is an example of a primary mesh section in the third mesh section. Primary mesh section 154 is an example of a primary mesh section in the fourth mesh section.

[0038] The primary mesh section 151 creates a primary pressure loss in the antioxidant gas introduced into the furnace wall 110 through the gas inlet 131. In a plan view, the gas inlet 131 is located in the center of the primary mesh section 151. The ends of the primary mesh section 151 are connected to the intermediate parts of the partition walls 142, 143, 144, and 145 in the Z-axis direction. The primary mesh section 151 vertically separates the first space partitioned by the partition walls 142, 143, 144, and 145. The area of ​​the primary mesh section 151 is larger than the area of ​​the gas inlet 131.

[0039] The primary mesh section 152 creates a primary pressure loss in the antioxidant gas introduced into the furnace wall 110 through the gas inlet 132. In a plan view, the gas inlet 132 is located in the center of the primary mesh section 152. The ends of the primary mesh section 152 are connected to the intermediate parts of the partition walls 142, 143, 145, and 146 in the Z-axis direction. The primary mesh section 152 vertically separates the second space partitioned by the partition walls 142, 143, 145, and 146. The area of ​​the primary mesh section 152 is larger than the area of ​​the gas inlet 132.

[0040] The primary mesh section 153 creates a primary pressure loss in the antioxidant gas introduced into the furnace wall 110 through the gas inlet 133. In a plan view, the gas inlet 133 is located in the center of the primary mesh section 153. The ends of the primary mesh section 153 are connected to the intermediate parts of the partition walls 142, 143, 147, and 148 in the Z-axis direction. The primary mesh section 153 vertically separates the third space partitioned by the partition walls 142, 143, 147, and 148. The area of ​​the primary mesh section 153 is larger than the area of ​​the gas inlet 133.

[0041] The primary mesh section 154 creates a primary pressure loss in the antioxidant gas introduced into the furnace wall 110 through the gas inlet 134. In a plan view, the gas inlet 134 is located in the center of the primary mesh section 154. The ends of the primary mesh section 154 are connected to the intermediate parts of the partition walls 142, 143, 148, and 149 in the Z-axis direction. The primary mesh section 154 vertically separates the fourth space partitioned by the partition walls 142, 143, 148, and 149. The area of ​​the primary mesh section 154 is larger than the area of ​​the gas inlet 134.

[0042] The antioxidant gas introduced into the furnace wall 110 through gas inlets 131-134 has its flow toward the bottom wall 114 restricted by the pressure loss in the primary mesh sections 151-154, and spreads out in the XY plane direction, passing through the primary mesh sections 151-154. At this time, the primary mesh sections 151-154 reduce the flow velocity of the antioxidant gas inside the furnace, thereby suppressing the entrainment of oxidizing gases from the outside near the gas inlets 131-134. In addition, by suppressing the variation in the flow velocity of the antioxidant gas per unit area, the generation of turbulence, which causes entrainment of oxidizing gases, can be suppressed. Furthermore, by reducing the flow velocity, the pressure drop inside the furnace due to an increase in flow velocity and the accompanying suction of oxidizing gases from the outside into the furnace can be suppressed. In addition, by reducing the flow velocity of the antioxidant gas, the heat transfer coefficient can be reduced, and the decrease in ambient temperature during bonding can be suppressed.

[0043] The secondary mesh section 160 generates a pressure loss in the antioxidant gas that has passed through the primary mesh section 150. Hereinafter, the pressure loss generated by the secondary mesh section 160 in the antioxidant gas will be referred to as the "secondary pressure loss." The secondary mesh section 160 is located inside the furnace wall, away from the primary mesh section 150. In a plan view, for example, the area of ​​the secondary mesh section 160 is approximately equal to the area of ​​the primary mesh section 150. The secondary mesh section 160 is, for example, a metal mesh with the same opening ratio and opening diameter as the primary mesh section 150.

[0044] Furthermore, the opening ratio and opening diameter of the secondary mesh section 160 are not limited to those described above, as long as the secondary mesh section 160 can generate a pressure loss to the oxidation-preventing gas. The opening ratio or opening diameter of the secondary mesh section 160 may be smaller than that of the primary mesh section 150. In addition, the material of the secondary mesh section 160 is preferably a metal with good heat resistance, similar to the material of the primary mesh section 150. The material of the secondary mesh section 160 may be flame-retardant fiber or ceramic, as long as it has sufficient heat resistance. However, since the secondary mesh section 160 is further from the heat source than the primary mesh section 150, the material of the secondary mesh section 160 may have lower heat resistance than the material of the primary mesh section 150.

[0045] The secondary mesh section 160 has secondary mesh sections 161, 162, 163, and 164. The secondary mesh sections 161 to 164 have main surfaces extending in the XY plane direction and through holes penetrating in the Z axis direction. Secondary mesh section 161 is an example of a secondary mesh section in the first mesh section. Secondary mesh section 162 is an example of a secondary mesh section in the second mesh section. Secondary mesh section 163 is an example of a secondary mesh section in the third mesh section. Secondary mesh section 164 is an example of a secondary mesh section in the fourth mesh section.

[0046] The secondary mesh section 161 generates a secondary pressure loss in the antioxidant gas that has passed through the primary mesh section 151. In a plan view, the gas inlet 131 is located in the center of the secondary mesh section 161. The ends of the secondary mesh section 161 are connected to the lower ends of the partition walls 142, 143, 144, and 145. The secondary mesh section 161 vertically separates the first space partitioned by the partition walls 142, 143, 144, and 145 from the space sandwiched in the XY plane by the side walls 112 and 113. The shape of the secondary mesh section 161 in a plan view (hereinafter referred to as "planar shape") is approximately the same as the planar shape of the primary mesh section 151. Also, in a plan view, the entire secondary mesh section 161 overlaps with the entire primary mesh section 151. The area of ​​the secondary mesh section 161 is larger than the area of ​​the gas inlet 131 and approximately the same as the area of ​​the primary mesh section 151.

[0047] The secondary mesh section 162 generates a secondary pressure loss in the antioxidant gas that has passed through the primary mesh section 152. In a plan view, the gas inlet 132 is located in the center of the secondary mesh section 162. The ends of the secondary mesh section 162 are connected to the lower ends of the partition walls 142, 143, 145, and 146. The secondary mesh section 162 vertically separates the second space partitioned by the partition walls 142, 143, 145, and 146 from the space sandwiched in the XY plane by the side walls 112 and 113. The planar shape of the secondary mesh section 162 is approximately the same as the planar shape of the primary mesh section 152. Also, in a plan view, the entire secondary mesh section 162 overlaps with the entire primary mesh section 152. The area of ​​the secondary mesh section 162 is larger than the area of ​​the gas inlet 132 and approximately the same as the area of ​​the primary mesh section 152.

[0048] The secondary mesh section 163 generates a secondary pressure loss in the oxidation prevention gas that has passed through the primary mesh section 153. In a plan view, the gas inlet 133 is located in the center of the secondary mesh section 163. The ends of the secondary mesh section 163 are connected to the lower ends of the partition walls 142, 143, 147, and 148. The secondary mesh section 163 vertically separates the third space partitioned by the partition walls 142, 143, 147, and 148 from the space sandwiched in the XY plane direction by the side walls 112 and 113. The planar shape of the secondary mesh section 163 is approximately equal to the planar shape of the primary mesh section 153. Also, in a plan view, the entire secondary mesh section 163 overlaps with the entire primary mesh section 153. The area of ​​the secondary mesh section 163 is larger than the area of ​​the gas inlet 133 and approximately equal to the area of ​​the primary mesh section 153.

[0049] The secondary mesh section 164 generates a secondary pressure loss in the antioxidant gas that has passed through the primary mesh section 154. In a plan view, the gas inlet 134 is located in the center of the secondary mesh section 164. The ends of the secondary mesh section 164 are connected to the lower ends of the partition walls 142, 143, 148, and 149. The secondary mesh section 164 vertically separates the fourth space partitioned by the partition walls 142, 143, 148, and 149 from the space sandwiched in the XY plane direction by the side walls 112 and 113. The planar shape of the secondary mesh section 164 is approximately the same as the planar shape of the primary mesh section 154. Also, in a plan view, the entire secondary mesh section 164 overlaps with the entire primary mesh section 154. The area of ​​the secondary mesh section 164 is larger than the area of ​​the gas inlet 134 and approximately the same as the area of ​​the primary mesh section 154.

[0050] The antioxidant gas that has passed through the primary mesh sections 151-154 has its flow toward the bottom wall 114 restricted by the pressure loss in the secondary mesh sections 161-164, and spreads out in the XY plane direction before passing through the secondary mesh sections 161-164. The antioxidant gas diffuses in the XY plane direction in stages through the primary mesh sections 151-154 and the secondary mesh sections 161-164. In this way, the variation in the flow velocity of the antioxidant gas per unit area, which causes turbulence, is suppressed by the secondary mesh sections 161-164.

[0051] The antioxidant gas that has passed through the secondary mesh sections 161-164 fills the space sandwiched between the side walls 112 and 113 in the XY plane. The excess antioxidant gas is released from the inlet 115, outlet 116, and opening 117 together with the oxidizing gas remaining inside the furnace wall 110. Even when attempting to efficiently discharge the oxidizing gas remaining inside the furnace wall 110 by increasing the total flow rate of the antioxidant gas, turbulence is unlikely to occur because the variation in the flow velocity of the antioxidant gas per unit area is small. Therefore, the inflow of outside air into the furnace wall 110 from the inlet 115, outlet 116, and opening 117 due to turbulent antioxidant gas flow is suppressed. In other words, when the total flow rate of the antioxidant gas is increased, the amount of oxidizing gas drawn in due to turbulent antioxidant gas flow can be suppressed, thereby preventing the reduction in oxidizing gas concentration from being inhibited. This suppresses bonding defects caused by oxidation of substrates (SB) and bonding components (BM), thereby improving bonding reliability.

[0052] Furthermore, in the case of eutectic bonding, where bonding is performed at high temperatures and the substrate SB and bonding member BM are prone to oxidation, it is particularly important to reduce the concentration of oxidizing gases remaining inside the furnace wall 110, and therefore this embodiment is effective.

[0053] The relationship between the area of ​​the secondary mesh section and the primary mesh section, and the relationship between the number of secondary mesh sections and the primary mesh section, are not limited to those described above. The area of ​​the secondary mesh section may differ from the area of ​​the primary mesh section. For example, by making the area of ​​the secondary mesh section larger than the area of ​​the primary mesh section, the antioxidant gas introduced from the gas inlet may be spread gradually in the XY plane direction. Also, the number of secondary mesh sections may differ from the number of primary mesh sections. For example, by arranging one secondary mesh section to overlap with two or more primary mesh sections, the antioxidant gas introduced from the gas inlet may be spread gradually in the XY plane direction.

[0054] The planar shape of the secondary mesh portion and its positional relationship to the primary mesh portion are not limited to those described above. The planar shape of the secondary mesh portion may differ from that of the primary mesh portion. A portion of the secondary mesh portion may be located outside the area overlapping with the primary mesh portion, or the entire secondary mesh portion may be located outside the area overlapping with the primary mesh portion.

[0055] The relative sizes of the areas of the first to fourth mesh sections are not limited to those described above. For example, the areas of the first to fourth mesh sections may be approximately equal. That is, the areas of the primary mesh sections of the first to fourth mesh sections may be approximately equal, and the areas of the secondary mesh sections of the first to fourth mesh sections may be approximately equal.

[0056] In this embodiment, the bonding apparatus has two overlapping mesh sections in the Z-axis direction, namely a primary mesh section and a secondary mesh section, but is not limited to this. The mesh section may have only one mesh section in the Z-axis direction, or it may have three or more mesh sections. Also, in this embodiment, the bonding apparatus has multiple mesh sections aligned in the X-axis direction, but it may also have multiple mesh sections aligned in the Y-axis direction.

[0057] The gas discharge section 170 has a gas outlet 171 that forms a gas flow of antioxidant gas across the opening 117 on the outside of the furnace wall 110. The gas discharge section 170 is provided on the top wall 111. The gas outlet 171 extends along the Y-axis direction which intersects with the X-axis direction, which is the transport direction of the substrate SB. The gas discharge section 170 is provided on the negative X-axis side of the opening 117, and the gas outlet 171 opens toward the opening 117.

[0058] The gas flow contributes to the sharpening of the image captured by the imaging unit 30. The antioxidant gas inside the furnace wall 110 is heated by the heater 180 and released as a heated gas flow from the opening 117. The heated gas flow becomes a heat haze, causing fluctuations in the image captured by the imaging unit 30. The gas flow formed by the gas outlet 171 removes the heated gas flow from above the opening 117, thereby suppressing the generation of heat haze. As a result, the image captured by the imaging unit 30 becomes sharper.

[0059] The heater 180 heats the bonding member BM by heating the substrate SB within the furnace wall 110. The heater 180 is provided, for example, on the upper surface of the bottom wall 114 or inside the bottom wall 114. The heater 180 is provided below the opening 117. When the bonding head 40 pressurizes the bonding member BM through the electronic component CH, the heater 180 contacts the main surface SBb of the substrate SB and also functions as a stage that supports the substrate SB against the pressure of the bonding head 40. The heater 180 may be provided closer to the inlet 115 than the outlet 116 in order to preheat the substrate SB so that the bonding member BM reaches a sufficiently high temperature during bonding. However, the heater 180 is provided away from the outlet 116 in order to suppress oxidation of the substrate SB. The heater may also be provided on the inner surface or inside the side walls 112, 113.

[0060] The imaging unit 30 images the substrate SB or the electronic component CH bonded to the substrate SB. For example, based on the acquired image, the imaging unit 30 compares the bonding area of ​​the substrate SB with the camera field of view and corrects the landing position of the bonding tool 43. Alternatively, for example, after mounting the electronic component CH to the substrate SB, the imaging unit 30 acquires images of the mounted substrate SB and electronic component CH and corrects the landing position during the next bonding. As the image becomes clearer, mounting accuracy is improved and the frequency of defective products being released is reduced. In other words, the reliability of bonding is improved.

[0061] As shown in Figure 1, the imaging unit 30 includes an imaging unit drive mechanism 31 and an imaging unit 33. The imaging unit drive mechanism 31 is a two-axis orthogonal actuator that moves the imaging unit 33 in the Y-axis and Z-axis directions. The imaging unit 33 is a two-dimensional image sensor. The imaging unit 33 is not particularly limited and can be, for example, a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal Oxide Semiconductor) image sensor.

[0062] The imaging unit may also be a three-dimensional image sensor. If the imaging unit is a three-dimensional image sensor, the imaging unit drive mechanism may be a single-axis actuator that moves the imaging unit in the Y-axis direction.

[0063] The bonding head 40 bonds the electronic component CH to the substrate SB. The bonding head 40 transports the electronic component CH picked up from the electronic component supply unit 50, approaches the substrate SB through the opening 117, and bonds the electronic component CH to the substrate SB.

[0064] As shown in Figure 1, the bonding head 40 includes a bonding tool drive mechanism 41 and a bonding tool 43. The bonding tool drive mechanism 41 is a three-axis orthogonal actuator that moves the bonding tool 43 in the X, Y, and Z directions. The bonding tool 43 bonds the electronic component CH to the substrate SB. For example, if the bonding member BM is a eutectic alloy, the bonding tool 43 has a pressurizing function that pressurizes the bonding member BM via the electronic component CH. The bonding tool 43 may also have a heating function that heats the bonding member BM via the electronic component CH, or a scrubbing function that scrubs the bonding member BM. The bonding tool 43 is a pickup collet that picks up the electronic component CH from the electronic component supply unit 50. The bonding tool 43 holding the electronic component CH approaches the substrate SB through the opening 117. At this time, the trajectory of the tip of the bonding tool 43 that holds the electronic component CH is, for example, arc-shaped. According to this, the travel distance and travel time of the bonding tool 43 are reduced compared to the case where the track is straight.

[0065] The electronic component supply unit 50 supplies electronic components CH. The electronic component supply unit 50 is not particularly limited and may be, for example, a tray feeder or a tape feeder.

[0066] <<Bonding Method>> Next, a bonding method using the bonding apparatus 1 will be described with reference to Figures 4 to 9. Figure 4 is a flowchart of the bonding method according to the first embodiment of the present invention. Figures 5 to 9 are diagrams showing the bonding process in progress. Hereinafter, the inside of the furnace wall 110 will be simply referred to as "inside the furnace," and the outside of the furnace wall 110 will be simply referred to as "outside the furnace."

[0067] First, an antioxidant gas is introduced into the furnace (S10).

[0068] As shown in Figure 5, an antioxidant gas is introduced into the furnace from the gas inlet 130. The antioxidant gas is introduced from each of the gas inlets 131 to 134. The order in which the antioxidant gas is introduced from the gas inlets 131 to 134 can be adjusted as appropriate. For example, the order in which the antioxidant gas is introduced may be adjusted as appropriate depending on the relative positions of the inlet 115, outlet 116, and opening 117. As an example, the introduction of the antioxidant gas may be started first from gas inlets 131 and 134, which are further from the opening 117, and then started later from gas inlets 132 and 133, which are closer to the opening 117. Conversely, the introduction of the antioxidant gas may be started first from gas inlets 132 and 133, and then started later from gas inlets 131 and 134.

[0069] The flow rate and velocity of the antioxidant gas at each of the gas inlets 131 to 134 may be the same. Alternatively, the flow rate and velocity of the antioxidant gas at each of the gas inlets 131 to 134 may be different. For example, the flow rate and velocity of the antioxidant gas at each of the gas inlets 131 to 134 may be appropriately adjusted according to the relative sizes of the areas of the primary mesh sections 151 to 154 or the relative sizes of the areas of the secondary mesh sections 161 to 164. As an example, the flow rate and velocity of the antioxidant gas at gas inlets 131 and 134 facing the primary mesh sections 151 and 154, which have larger areas, may be greater than the flow rate and velocity of the antioxidant gas at gas inlets 132 and 133 facing the primary mesh sections 152 and 153, which have smaller areas.

[0070] In the antioxidant gas introduced from the gas inlet, pressure loss occurs due to the primary mesh section 150 and the secondary mesh section 160.

[0071] Specifically, as shown in Figure 5, the antioxidant gas introduced from the gas inlet 130 hits the primary mesh section 150, causing a pressure loss in the antioxidant gas. The antioxidant gas that hits the primary mesh section 150 diffuses into the space enclosed in the XY plane by the partition wall 140 and sandwiched in the Z axis direction by the top wall 111 and the primary mesh section 150 (hereinafter referred to as the "primary diffusion chamber"). The antioxidant gas that has diffused into the primary diffusion chamber passes through the primary mesh section 150 in response to the increase in the internal pressure of the primary diffusion chamber.

[0072] Subsequently, the antioxidant gas that has passed through the primary mesh section 150 comes into contact with the secondary mesh section 160, causing further pressure loss to the antioxidant gas. The antioxidant gas that comes into contact with the secondary mesh section 160 diffuses into the space enclosed in the XY plane by the partition wall 140 and sandwiched in the Z axis direction by the primary mesh section 150 and the secondary mesh section 160 (hereinafter referred to as the "secondary diffusion chamber"). The antioxidant gas that has diffused into the secondary diffusion chamber passes through the secondary mesh section 160 in response to the increase in the internal pressure of the secondary diffusion chamber.

[0073] In this way, after the pressure loss of the antioxidant gas through the primary mesh section 150 and the secondary mesh section 160, the inside of the furnace becomes an antioxidant gas atmosphere.

[0074] Specifically, the antioxidant gas introduced into the furnace from the gas inlet 130 diffuses in the XY plane direction via the primary and secondary diffusion chambers, passes through the secondary mesh section 160, and fills the furnace. The oxidizing gas in the furnace is replaced by the antioxidant gas, and the furnace becomes an antioxidant gas atmosphere. The antioxidant gas that passes through the secondary mesh section 161 is mainly released outside the furnace from the inlet 115. The antioxidant gas that passes through the secondary mesh sections 162 and 163 is mainly discharged outside the furnace from the opening 117. The antioxidant gas that passes through the secondary mesh section 164 is mainly discharged outside the furnace from the outlet 116. Any oxidizing gas remaining in the furnace is pushed out by the antioxidant gas released from the inlet 115, outlet 116, and opening 117.

[0075] In this way, the primary mesh section 150 and the secondary mesh section 160 create a pressure loss, limiting the inflow rate of the antioxidant gas. This prevents the entrainment and suction of outside air, which is an oxidizing gas. Furthermore, the temperature drop near the bonding region due to the suction of outside air is suppressed, enabling bonding at an ideal temperature and improving bonding quality.

[0076] Next, a valve (not shown) is operated to supply gas to the gas discharge section 170, forming a gas flow in the bonding region outside the furnace (S20).

[0077] As shown in Figure 6, an antioxidant gas is discharged from the gas outlet 171 of the gas discharge section 170. The gas flow flows along the top wall 111 in the positive X-axis direction, forming a curtain-like structure that covers the opening 117.

[0078] Next, a transport device (not shown) is controlled to load the substrate SB into the furnace and position it in a location corresponding to the opening 117 (S30).

[0079] Specifically, as shown in Figure 7, the substrate SB is transported into the furnace from the inlet 115 by the transport mechanism 20. Inside the furnace, the substrate SB is heated by the heater 180 and transported to below the opening 117. When the substrate SB is introduced into the furnace, it is surrounded by oxidizing gases from the outside air, but these oxidizing gases are removed by the antioxidant gas released from the inlet 115.

[0080] Next, the bonding head 40 is controlled to load the electronic component CH into the furnace (S40).

[0081] As shown in Figure 7, the bonding tool 43 picks up the electronic component CH from the electronic component supply unit 50 and transports the electronic component CH into the furnace through the opening 117. When the bonding tool 43 and the electronic component CH are introduced into the furnace, they are surrounded by oxidizing gas from the outside air, but this oxidizing gas is removed by the antioxidant gas released from the opening 117. In addition, any oxidizing gas clinging to the bonding tool 43 and the electronic component CH is removed by the gas flow formed by the gas outlet 171.

[0082] Next, the bonding head 40 is controlled to bond the electronic component CH to the substrate SB in the furnace (S50).

[0083] As shown in Figure 8, an electronic component CH is bonded to a substrate SB supported by a heater 180 using a bonding tool 43. The bonding member BM is heated by the heater 180 and pressurized by the bonding tool 43. Once bonding of one electronic component CH is complete, the bonding tool 43 releases the electronic component CH and leads it out of the furnace through the opening 117. The bonding tool 43 then moves to the electronic component supply unit 50 to pick up the next electronic component CH.

[0084] As the bonding tool 43 is led out of the furnace through the opening 117, outside air containing oxidizing gas is drawn into the space left behind. This oxidizing gas is removed by the antioxidant gas released from the opening 117 and by the gas flow formed by the gas outlet 171.

[0085] While the bonding tool 43 is moving outside the furnace, the imaging unit 33 images the orientation and posture of the electronic component CH through the opening 117 to check for bonding defects. The antioxidant gas emitted from the opening 117 causes heat haze that degrades the image quality of the image captured by the imaging unit 33, but it is removed by the gas flow formed by the gas outlet 171. As a result, the image captured by the imaging unit 33 becomes clearer, and the accuracy of determining bonding defects is improved.

[0086] Next, the substrate SB to which the electronic component CH is bonded is removed from the furnace (S60).

[0087] As shown in Figure 9, the substrate SB is repeatedly bonded with electronic components CH using the bonding tool 43. Once a predetermined number of electronic components CH have been bonded to the substrate SB, it is transported out of the furnace through the outlet 116 by the transport mechanism 20. The substrate SB, having been removed from the heater 180, is cooled during transport, and by the time it is taken out of the outlet 116, the temperature of the substrate SB has dropped to a temperature at which oxidation does not occur.

[0088] As the substrate SB is discharged outside the furnace through outlet 116, outside air containing oxidizing gas is drawn into the space left behind. This oxidizing gas is then removed by the antioxidant gas released from outlet 116.

[0089] Other embodiments are described below. Components identical or similar to those shown in the first embodiment are denoted by the same or similar reference numerals, and their descriptions are omitted as appropriate. Furthermore, similar effects and benefits from similar components are not mentioned sequentially.

[0090] <Second Embodiment> Next, the configuration of the heating furnace 200 according to the second embodiment will be described with reference to Figure 10. Figure 10 is a cross-sectional view of the heating furnace according to the second embodiment of the present invention. This embodiment differs from the first embodiment in that the oxidation prevention passage further includes a flow path adjustment member.

[0091] Specifically, the heating furnace 200 is equipped with a flow path adjustment member 250 that adjusts the flow path of the antioxidant gas in place of the primary mesh section 150. The flow path adjustment member 250 may cause a pressure loss in the antioxidant gas introduced from the gas inlet 130. In the example shown in Figure 10, the flow path adjustment member 250 has plate-shaped members 251, 252, 253, and 254. Plate-shaped member 251 is an example of a first plate-shaped member, plate-shaped member 252 is an example of a second plate-shaped member, plate-shaped member 253 is an example of a third plate-shaped member, and plate-shaped member 254 is an example of a fourth plate-shaped member.

[0092] The plate-shaped member 251 is provided between the gas inlet 131 and the secondary mesh section 161. The plate-shaped member 251 has a first main surface extending in the XY plane direction and facing the gas inlet 131, and a second main surface extending in the XY plane direction and facing the secondary mesh section 161. The plate-shaped member 251 is flat, and the first and second main surfaces of the plate-shaped member 251 are planar. The plate-shaped member 251 is connected to and held by a holding member (not shown) to one of the top wall 111, partition walls 142, 143, 144, 145, and the secondary mesh section 161. The area of ​​the plate-shaped member 251 is larger than the area of ​​the gas inlet 131 and smaller than the area of ​​the secondary mesh section 161. In plan view, the central part of the plate-shaped member 251 overlaps with the central part of the gas inlet 131. The antioxidant gas introduced through the gas inlet 131 hits the plate-shaped member 251, diffuses in the XY plane, passes through the secondary mesh section 161, and is supplied to the bottom wall 114 side.

[0093] The plate-shaped member 252 is provided between the gas inlet 132 and the secondary mesh section 162. The plate-shaped member 252 has a first main surface extending in the XY plane direction and facing the gas inlet 132, and a second main surface extending in the XY plane direction and facing the secondary mesh section 162. The plate-shaped member 252 is flat, and the first and second main surfaces of the plate-shaped member 252 are planar. The plate-shaped member 252 is connected to and held by a holding member (not shown) to one of the top wall 111, partition walls 142, 143, 145, 146, and the secondary mesh section 162. The area of ​​the plate-shaped member 252 is larger than the area of ​​the gas inlet 132 and smaller than the area of ​​the secondary mesh section 162. In a plan view, the central part of the plate-shaped member 252 overlaps with the central part of the gas inlet 132. The antioxidant gas introduced through the gas inlet 132 hits the plate-shaped member 252, diffuses in the XY plane, passes through the secondary mesh section 162, and is supplied to the bottom wall 114 side.

[0094] The plate-shaped member 253 is provided between the gas inlet 133 and the secondary mesh section 163. The plate-shaped member 253 has a first main surface extending in the XY plane direction and facing the gas inlet 133, and a second main surface extending in the XY plane direction and facing the secondary mesh section 163. The plate-shaped member 253 is flat, and the first and second main surfaces of the plate-shaped member 253 are planar. The plate-shaped member 253 is connected to and held by a holding member (not shown) to one of the top wall 111, partition walls 142, 143, 147, 148, and the secondary mesh section 163. The area of ​​the plate-shaped member 253 is larger than the area of ​​the gas inlet 133 and smaller than the area of ​​the secondary mesh section 163. In plan view, the central part of the plate-shaped member 253 overlaps with the central part of the gas inlet 133. The antioxidant gas introduced through the gas inlet 133 hits the plate-shaped member 253, diffuses in the XY plane, passes through the secondary mesh section 163, and is supplied to the bottom wall 114 side.

[0095] The plate-shaped member 254 is provided between the gas inlet 134 and the secondary mesh section 164. The plate-shaped member 254 has a first main surface extending in the XY plane direction and facing the gas inlet 134, and a second main surface extending in the XY plane direction and facing the secondary mesh section 164. The plate-shaped member 254 is flat, and the first and second main surfaces of the plate-shaped member 254 are planar. The plate-shaped member 254 is connected to and held by a holding member (not shown) to one of the top wall 111, partition walls 142, 143, 148, 149, and the secondary mesh section 164. The area of ​​the plate-shaped member 254 is larger than the area of ​​the gas inlet 134 and smaller than the area of ​​the secondary mesh section 164. In plan view, the central part of the plate-shaped member 254 overlaps the central part of the gas inlet 134. The antioxidant gas introduced through the gas inlet 134 hits the plate-shaped member 254, diffuses in the XY plane, passes through the secondary mesh section 164, and is supplied to the bottom wall 114 side.

[0096] The area of ​​plate-shaped member 251 is larger than the area of ​​plate-shaped member 252, and the area of ​​plate-shaped member 254 is larger than the area of ​​plate-shaped member 253. The area of ​​plate-shaped member 251 is approximately equal to the area of ​​plate-shaped member 254, and the area of ​​plate-shaped member 252 is approximately equal to the area of ​​plate-shaped member 253.

[0097] Multiple plate-like members may be provided between the gas inlet 131 and the secondary mesh section 161. In this case, the multiple plate-like members may be arranged in the XY plane direction, or at least a portion of each may overlap in the Z axis direction. Similarly, multiple plate-like members may be provided between the gas inlet 132 and the secondary mesh section 162, between the gas inlet 133 and the secondary mesh section 163, and between the gas inlet 134 and the secondary mesh section 164.

[0098] Furthermore, the shape of the plate-like member is not limited to a flat plate. For example, at least one of the first main surface and the second main surface of the plate-like member may be a curved surface such as a concave or convex curved surface, an uneven surface with irregularities arranged in a matrix, an inclined surface that is inclined with respect to the top wall of the furnace wall, or a combination thereof.

[0099] Furthermore, while the flow path adjustment member is provided in place of the primary mesh section, it is not limited to this. The flow path adjustment member may also be provided in place of the secondary mesh section. The flow path adjustment member may be provided between the gas inlet and the primary mesh section, or between the primary mesh section and the secondary mesh section.

[0100] The flow path adjustment member is, for example, a plate-shaped member, but is not limited to this. The flow path adjustment member may be, for example, rock wool, ceramic wool, metal wool, porous ceramic material, porous metal material, etc.

[0101] <Third Embodiment> Next, the configuration of the bonding apparatus 3 according to the third embodiment will be described with reference to Figure 11. Figure 11 is a perspective view showing the bonding apparatus according to the third embodiment of the present invention. In this embodiment, the configuration of the opening for bringing the bonding tool close to the substrate differs from that of the first embodiment.

[0102] Specifically, in the bonding apparatus 3, the opening 317 is also provided in the first side wall, which consists of a partition wall 143 and a side wall 113. The opening 317 is provided in an L-shape, continuously extending from the top wall 111 to the first side wall. The gas discharge section 370 is provided in an L-shape, continuously extending from the top wall 111 to the first side wall, along the opening 317. The opening 317 and the gas discharge section 370 are provided, for example, in the top wall 111, partition wall 143, and side wall 113, but it is sufficient if they are provided in at least the top wall 111 and partition wall 143.

[0103] By providing an opening 317 on the first side wall, the trajectory of the tip of the bonding tool 43 that holds the electronic component CH is set to pass through the portion of the opening 317 provided on the first side wall. Thus, compared to the trajectory of the tip of the bonding tool 43 in the first embodiment, the trajectory of the tip of the bonding tool 43 in this embodiment is compressed in the Z-axis direction. Therefore, the travel distance and travel time of the tip of the bonding tool 43 are shortened. When the bonding tool 43 passes through the portion of the opening 317 provided on the first side wall, the entry of oxidizing gases from outside air into the furnace due to the movement of the bonding tool 43 along the Y-axis direction is suppressed by the gas flow formed by the portion of the gas discharge section 370 provided on the first side wall.

[0104] Some or all embodiments of the present invention are described below. However, the present invention is not limited to the embodiments described below.

[0105] [Note 1] A transport mechanism for transporting substrates, A bonding tool for bonding electronic components to the aforementioned substrate, An oxidation prevention path extending along the conveying mechanism and having a wall portion surrounding the conveying mechanism Equipped with, The aforementioned oxidation prevention passage is An inlet for introducing the aforementioned substrate, An opening that allows the bonding tool and the substrate to move closer together or further apart, An outlet for leading out the substrate on which the aforementioned electronic components are bonded, It has, The aforementioned oxidation prevention passage is Inside the aforementioned wall portion is a gas inlet for introducing an oxidation-preventive gas, The pore portion that generates pressure loss in the antioxidant gas introduced into the inside of the wall portion from the gas inlet It further possesses, Bonding equipment.

[0106] In this embodiment, the antioxidant gas, which experiences pressure loss due to the pores, is supplied into the wall. This limits the inflow rate of the antioxidant gas, suppressing the generation of turbulence and pressure drop within the furnace wall, and preventing the entrainment of outside air. Furthermore, as the antioxidant gas is supplied by diffusing into the wall, the variation in the flow velocity per unit area of ​​the antioxidant gas is reduced, suppressing turbulence caused by variations in flow velocity. By suppressing turbulence that draws in outside air containing oxidizing gas from the inlet, outlet, and openings, causing an increase in the concentration of oxidizing gas within the wall, oxidation of substrates and other materials can be suppressed. As a result, the occurrence of bonding defects caused by oxidation of substrates and other materials can be suppressed, and the reliability of bonding can be improved.

[0107] [Note 2] The gas inlet is provided in the wall portion, The aforementioned pore portion is located on the inside of the wall portion, away from the gas inlet. The bonding apparatus described in [Note 1].

[0108] [Note 3] When viewed from a plan view from the direction in which the pore portion and the gas inlet overlap, the area of ​​the pore portion is larger than the area of ​​the gas inlet. The bonding apparatus described in [Appendix 1] or [Appendix 2].

[0109] According to this embodiment, since the mesh portion for diffusing the antioxidant gas is larger than the gas inlet, the variation in the flow velocity per unit area of ​​the antioxidant gas after passing through the pore portion can be reduced compared to the variation in the flow velocity per unit area of ​​the antioxidant gas immediately after it is introduced into the wall portion by the gas inlet.

[0110] [Note 4] The aforementioned gas inlet is, A first gas inlet is provided between the aforementioned inlet and the aforementioned opening, A second gas inlet is provided between the first gas inlet and the opening, A third gas inlet is provided between the outlet and the opening, A fourth gas inlet is provided between the third gas inlet and the outlet. It has, The aforementioned pore portion is The first pore portion generates a pressure loss in the antioxidant gas introduced into the inside of the wall portion from the first gas inlet, The second pore portion generates a pressure loss in the antioxidant gas introduced into the inside of the wall portion from the second gas inlet, A third pore portion that generates pressure loss in the antioxidant gas introduced into the inside of the wall portion from the third gas inlet, The fourth pore portion generates a pressure loss in the antioxidant gas introduced into the inside of the wall portion from the fourth gas inlet, Having, A bonding apparatus as described in any one of the following [Appendix 1] to [Appendix 3].

[0111] [Note 5] The aperture ratio of the second pore portion is smaller than that of the first pore portion. The aperture ratio of the third pore is smaller than that of the fourth pore. The bonding apparatus described in [Appendix 4].

[0112] In this embodiment, the opening ratio of the second and third pores near the opening is small. The smaller the opening ratio of the pores, the greater the pressure loss of the antioxidant gas, and the more the antioxidant gas diffuses. Therefore, the smaller the opening ratio of the pores, the smaller the variation in the flow velocity per unit area of ​​the antioxidant gas passing through the pores, and the generation of turbulence near the opening is effectively suppressed. Since electronic components are bonded to the substrate in the space below the opening, the substrate is heated and easily oxidized near the opening. However, since the generation of turbulence near the opening is effectively suppressed, the increase in the concentration of oxidizing gas near the opening inside the wall is suppressed, and the oxidation of the substrate and other materials can be effectively suppressed.

[0113] [Note 6] The aforementioned pore portion is The antioxidant gas introduced into the inside of the wall from the gas inlet is provided with a primary pore portion that generates a primary pressure loss, The antioxidant gas that has passed through the primary pores is given a secondary pore that generates a secondary pressure loss. Having, A bonding apparatus as described in any one of the following [Appendix 1] to [Appendix 5].

[0114] According to this embodiment, the antioxidant gas diffuses stepwise through the primary and secondary pores, further suppressing variations in the flow velocity of the non-oxidizing gas per unit area, which can cause turbulence.

[0115] [Note 7] The system further comprises an electronic component supply unit that supplies the aforementioned electronic components, The bonding tool picks up the electronic component from the electronic component supply unit and transports the electronic component into the oxidation prevention passage through the opening. A bonding apparatus as described in any one of the following [Appendix 1] to [Appendix 6].

[0116] [Note 8] The bonding tool presses and heats the electronic component against the substrate to eutectic bond the electronic component and the substrate. A bonding apparatus as described in any one of the following [Appendix 1] to [Appendix 7].

[0117] According to this embodiment, when bonding with a eutectic alloy, which is prone to oxidation of substrates and other materials due to high temperatures, it is particularly important to reduce the concentration of oxidizing gases inside the wall portion, and therefore this embodiment is more effective.

[0118] As explained above, we can provide a bonding apparatus that can improve the reliability of bonding.

[0119] The embodiments described above are provided to facilitate understanding of the present invention and are not intended to limit its interpretation. The elements, arrangement, materials, conditions, shapes, and sizes of the embodiments are not limited to those exemplified and can be modified as appropriate. Furthermore, it is possible to partially substitute or combine the configurations shown in different embodiments. [Explanation of Symbols]

[0120] 1…Bonding equipment 20…Conveying mechanism 30…Imaging Unit 31…Imaging Unit Drive Mechanism 33…Imaging Unit 40... Bonding head 41…Bonding tool drive mechanism 43…Bonding Tools 50…Electronic Components Supply Department 100...Heating furnace 110...furnace wall 111...Heavenly Wall 112,113…Side wall 114...Bottom wall 115... Inlet 116... Outlet 117…Opening 130, 131~134... Gas inlet 140,142~149…Bulkhead 150, 151~154... Primary mesh section 160, 161~164...Secondary mesh section 170...Gas discharge section 171...Gas outlet 180... Heater SB... Circuit board CH…Electronic parts BM... Joining member

Claims

1. A transport mechanism for transporting substrates, A bonding tool for bonding electronic components to the aforementioned substrate, An oxidation prevention path extending along the conveying mechanism and having a wall portion surrounding the conveying mechanism Equipped with, The aforementioned oxidation prevention passage is An inlet for introducing the aforementioned substrate, An opening that allows the bonding tool and the substrate to move closer together or further apart, An outlet for leading out the substrate on which the aforementioned electronic components are bonded, It has, The aforementioned oxidation prevention passage is A gas inlet for introducing an oxidation-preventive gas is provided on the inside of the aforementioned wall portion, The pores that create pressure loss in the antioxidant gas introduced into the inside of the wall from the gas inlet It further possesses, The aforementioned gas inlet is, A first gas inlet is provided between the aforementioned inlet and the aforementioned opening, A second gas inlet is provided between the first gas inlet and the opening, A third gas inlet is provided between the outlet and the opening, A fourth gas inlet is provided between the third gas inlet and the outlet. It has, The aforementioned pore portion is The first pore portion generates a pressure loss in the antioxidant gas introduced into the inside of the wall portion from the first gas inlet, The second pore portion generates a pressure loss in the antioxidant gas introduced into the inside of the wall portion from the second gas inlet, A third pore portion that generates a pressure loss in the antioxidant gas introduced into the inside of the wall portion from the third gas inlet, The fourth pore portion generates a pressure loss in the antioxidant gas introduced into the inside of the wall portion from the fourth gas inlet, Having, Bonding equipment.

2. A transport mechanism for transporting substrates, A bonding tool for bonding electronic components to the aforementioned substrate, An oxidation prevention path extending along the conveying mechanism and having a wall portion surrounding the conveying mechanism Equipped with, The aforementioned oxidation prevention passage is An inlet for introducing the aforementioned substrate, An opening that allows the bonding tool and the substrate to move closer together or further apart, An outlet for leading out the substrate on which the aforementioned electronic components are bonded, It has, The aforementioned oxidation prevention passage is A gas inlet for introducing an oxidation-preventive gas is provided on the inside of the aforementioned wall portion, The pores that create pressure loss in the antioxidant gas introduced into the inside of the wall from the gas inlet It further possesses, The aforementioned pore portion is The antioxidant gas introduced into the inside of the wall from the gas inlet is provided with a primary pore portion that generates a primary pressure loss, The antioxidant gas that has passed through the primary pores is given a secondary pore that generates a secondary pressure loss. Having, Bonding equipment.

3. The gas inlet is provided in the wall portion, The aforementioned pore portion is located on the inside of the wall portion, away from the gas inlet. The bonding apparatus according to claim 1 or 2.

4. When viewed from a plan view from the direction in which the pore portion and the gas inlet overlap, the area of ​​the pore portion is larger than the area of ​​the gas inlet. The bonding apparatus according to claim 1 or 2.

5. The aperture ratio of the second pore portion is smaller than that of the first pore portion. The aperture ratio of the third pore is smaller than that of the fourth pore. The bonding apparatus according to claim 1.

6. The system further comprises an electronic component supply unit that supplies the aforementioned electronic components, The bonding tool picks up the electronic component from the electronic component supply unit and transports the electronic component into the oxidation prevention passage through the opening. The bonding apparatus according to claim 1 or 2.

7. The bonding tool presses and heats the electronic component against the substrate to eutectic bond the electronic component and the substrate. The bonding apparatus according to claim 1 or 2.

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