Indication device

Abstract

The present invention provides a substantially high-definition display device. A display device according to the present invention comprises first to fourth EL layers which are sequentially arranged to be adjacent to each other in one direction. The first and second EL layers emit light of a same color; and the third and fourth EL layers emit light of a same color. The color of the light emitted by the third and fourth EL layers is different from the color of the light emitted by the first and second EL layers. The first to fourth EL layers are formed by forming a first EL film and a second EL film, and dividing the first EL film and the second EL film with use of a photolithography method. The first EL film is formed into the first and second EL layers; and the second EL film is formed into the third and fourth EL layers.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. Another aspect of the present invention relates to a method for manufacturing a display device. Another aspect of the present invention relates to a method for driving a display device. Another aspect of the present invention relates to a display module and electronic equipment.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] There is a growing demand for higher resolution display devices. Devices requiring high resolution display capabilities, such as those for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), are being actively developed.

[0004] Furthermore, in recent years, display devices are expected to have applications in a variety of uses. For example, large-scale display devices are used in home television systems (also called televisions or television receivers), digital signage, and PID (Public Information Display). In addition, development is progressing on smartphones and tablet devices equipped with touch panels as portable information terminals.

[0005] As display devices, for example, light-emitting devices including light-emitting devices (also referred to as light-emitting elements) have been developed. Light-emitting devices utilizing the electroluminescence (hereinafter referred to as EL) phenomenon (also referred to as EL devices, EL elements) have characteristics such as being easy to be made thin and lightweight, being capable of responding at high speed to input signals, and being drivable using a direct-current constant-voltage power supply, and are applied to display devices.

[0006] Patent Document 1 discloses a display device for VR using an organic EL device (also referred to as an organic EL element). In addition, Patent Document 2 discloses a large-sized display device using an organic EL device (also referred to as an organic EL element). Furthermore, Non-Patent Document 1 discloses a method for manufacturing an organic optoelectronic device using standard UV photolithography. [Prior Art Documents] [Patent Documents]

[0007] [Patent Document 1] International Publication No. 2018 / 087625 [Patent Document 2] Japanese Unexamined Patent Application Publication No. 2019-175832 [Non-Patent Documents]

[0008] [Non-Patent Document 1] B. Lamprecht et al., “Organic optoelectronic device fabrication using standard UV photolithography” phys.stat.sol.(RRL) 2, No.1, p.16-18(2008) [Summary of the Invention] [Problem to be Solved by the Invention]

[0009] When manufacturing a display device having multiple organic EL elements, each with a different emission color, it is necessary to form each of the light-emitting layers with different emission colors in an island-like structure.

[0010] For example, island-shaped light-emitting layers can be deposited using a vacuum deposition method with a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers due to various factors such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the deposited film due to vapor scattering. Therefore, it is difficult to create fine patterns for the island-shaped light-emitting layers, making it difficult to achieve high resolution and high aperture ratio in display devices. In addition, during deposition, the contour of the layer may become blurred, and the thickness at the edges may become thinner. In other words, the thickness of the island-shaped light-emitting layer may vary depending on the location.

[0011] One aspect of the present invention aims to provide a substantially high-definition display device. One aspect of the present invention aims to provide a display device capable of displaying high-resolution images. One aspect of the present invention aims to provide a display device capable of displaying high-quality images. One aspect of the present invention aims to provide a highly reliable display device.

[0012] One aspect of the present invention aims to provide a method for manufacturing a substantially high-definition display device. One aspect of the present invention aims to provide a method for manufacturing a display device capable of displaying high-resolution images. One aspect of the present invention aims to provide a method for manufacturing a display device capable of displaying high-quality images. One aspect of the present invention aims to provide a method for manufacturing a highly reliable display device. One aspect of the present invention aims to provide a method for manufacturing a display device with a high yield.

[0013] One aspect of the present invention aims to provide a method for driving a substantially high-definition display device. Another aspect of the present invention aims to provide a method for driving a display device capable of displaying high-resolution images. Another aspect of the present invention aims to provide a method for driving a display device capable of displaying high-quality images.

[0014] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0015] One aspect of the present invention is a display device comprising a first pixel electrode, a second pixel electrode, a third pixel electrode, and a fourth pixel electrode, and a first EL layer on the first pixel electrode, a second EL layer on the second pixel electrode, a third EL layer on the third pixel electrode, and a fourth EL layer on the fourth pixel electrode, wherein the first EL layer, the second EL layer, the third EL layer, and the fourth EL layer are arranged adjacently in this order in one direction, the first EL layer and the second EL layer emit light of the same color, the third EL layer and the fourth EL layer emit light of the same color, and the third and fourth EL layers emit light of a different color from the first and second EL layers.

[0016] Alternatively, in the above embodiment, the device comprises a first transistor, a second transistor, a third transistor, and a fourth transistor, wherein one of the sources or drains of the first transistor is electrically connected to a first pixel electrode, one of the sources or drains of the second transistor is electrically connected to a second pixel electrode, one of the sources or drains of the third transistor is electrically connected to a third pixel electrode, and one or more of the first to fourth transistors may have a metal oxide in the channel forming region.

[0017] Alternatively, in the above embodiment, insulating layers may be provided in the region between the first EL layer and the second EL layer, the region between the second EL layer and the third EL layer, and the region between the third EL layer and the fourth EL layer.

[0018] Alternatively, in the above embodiment, the insulating layer may have an organic material.

[0019] Alternatively, in the above embodiment, the insulating layer may include a photosensitive material.

[0020] Alternatively, in the above embodiment, the device has a common layer on the first to fourth EL layers and on the insulating layer, and a common electrode on the common layer, the common layer may have at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0021] Alternatively, one aspect of the present invention is a method for manufacturing a display device, comprising: forming a first pixel electrode, a second pixel electrode, a third pixel electrode, and a fourth pixel electrode; forming a first EL film on the first and second pixel electrodes and a second EL film on the third and fourth pixel electrodes; processing the first EL film to form a first EL layer on the first pixel electrode and a second EL layer on the second pixel electrode; and processing the second EL film to form a third EL layer on the third pixel electrode and a fourth EL layer on the fourth pixel electrode, wherein the first EL layer, the second EL layer, the third EL layer, and the fourth EL layer are arranged adjacent to each other in this order in one direction.

[0022] Alternatively, in the above embodiment, the first and second EL layers may emit light of a different color from the third and fourth EL layers.

[0023] Alternatively, in the above embodiment, the first EL film and the second EL film may be formed by a vapor deposition method using a metal mask.

[0024] Alternatively, in the above embodiment, the first EL film and the second EL film may be formed using a wet method.

[0025] Alternatively, in the above embodiment, after forming the first EL film and the second EL film, a sacrificial film may be formed on the first EL film and the second EL film, a resist mask may be formed on the sacrificial film, and the sacrificial film, the first EL film and the second EL film may be processed to form the first to fourth EL layers and the first to fourth sacrificial layers on the first to fourth EL layers.

[0026] Alternatively, in the above embodiment, after forming the first to fourth EL layers, an insulating film may be formed to cover the first to fourth EL layers, and the insulating film may be processed to form insulating layers in the region between the first EL layer and the second EL layer, the region between the second EL layer and the third EL layer, and the region between the third EL layer and the fourth EL layer.

[0027] Alternatively, in the above embodiment, the insulating film may be formed using a spin coating method, a spray coating method, or a screen printing method.

[0028] Alternatively, in the above embodiment, a photosensitive material may be used as the insulating film, and the insulating film may be processed using a photolithography method.

[0029] Alternatively, in the above embodiment, at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer may be formed as a common layer on the first to fourth EL layers, and a common electrode may be formed on the common layer.

[0030] Alternatively, one aspect of the present invention relates to a method for driving a display device having a first sub-pixel, a second sub-pixel adjacent to the first sub-pixel and emitting light of the same color as the first sub-pixel, a third sub-pixel emitting light of a different color from the first and second sub-pixels, a fourth sub-pixel adjacent to the third sub-pixel and emitting light of the same color as the third sub-pixel, wherein the first to fourth sub-pixels are arranged in one direction, and the method relates to displaying on a display device having a fifth sub-pixel, a sixth sub-pixel adjacent to the fifth sub-pixel and emitting light of a different color from the fifth sub-pixel, a seventh sub-pixel emitting light of the same color as the fifth sub-pixel, and an eighth sub-pixel adjacent to the seventh sub-pixel and emitting light of the same color as the sixth sub-pixel, wherein the fifth to eighth sub-pixels are arranged in one direction. This is a method for driving a display device that generates image data assuming the following: the image data has a first value corresponding to the brightness of the light emitted by the fifth subpixel, a second value corresponding to the brightness of the light emitted by the sixth subpixel, a third value corresponding to the brightness of the light emitted by the seventh subpixel, and a fourth value corresponding to the brightness of the light emitted by the eighth subpixel; the fifth value is generated based on the first value and the third value; the sixth value is generated based on the second value and the fourth value; the first subpixel emits light with brightness corresponding to the first value; the second subpixel emits light with brightness corresponding to the fifth value; the third subpixel emits light with brightness corresponding to the sixth value; and the fourth subpixel emits light with brightness corresponding to the fourth value.

[0031] Alternatively, in the above embodiment, the fifth value may include the sum of the value obtained by multiplying the first value by the first coefficient and the value obtained by multiplying the third value by the second coefficient, and the sixth value may include the sum of the value obtained by multiplying the second value by the third coefficient and the value obtained by multiplying the fourth value by the fourth coefficient.

[0032] Alternatively, in the above embodiment, the first coefficient may be greater than the second coefficient, and the third coefficient may be less than the fourth coefficient. [Effects of the Invention]

[0033] According to one aspect of the present invention, a substantially high-definition display device can be provided. According to one aspect of the present invention, a display device capable of displaying high-resolution images can be provided. According to one aspect of the present invention, a display device capable of displaying high-quality images can be provided. According to one aspect of the present invention, a highly reliable display device can be provided.

[0034] One aspect of the present invention provides a method for manufacturing a substantially high-definition display device. One aspect of the present invention provides a method for manufacturing a display device capable of displaying high-resolution images. One aspect of the present invention provides a method for manufacturing a display device capable of displaying high-quality images. One aspect of the present invention provides a method for manufacturing a highly reliable display device. One aspect of the present invention aims to provide a method for manufacturing a display device with a high yield.

[0035] According to one aspect of the present invention, a method for driving a substantially high-definition display device can be provided. According to one aspect of the present invention, a method for driving a display device capable of displaying high-resolution images can be provided. According to one aspect of the present invention, a method for driving a display device capable of displaying high-quality images can be provided.

[0036] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0037] Figure 1 is a top view showing an example of the configuration of a display device. Figures 2A to 2D are cross-sectional views showing examples of the configuration of a display device. Figures 3A, 3B, 3C1, and 3C2 are cross-sectional views showing examples of the configuration of a display device. Figure 4 is a cross-sectional view showing an example of the configuration of a display device. Figures 5A to 5E are cross-sectional views showing examples of the configuration of a display device. Figures 6A to 6C are cross-sectional views showing examples of the configuration of a display device. Figures 7A to 7D are cross-sectional views showing examples of methods for manufacturing a display device. Figure 8A is a top view showing an example of a method for manufacturing a display device. Figure 8B is a cross-sectional view showing an example of a method for manufacturing a display device. Figure 9A is a top view showing an example of a method for manufacturing a display device. Figure 9B is a cross-sectional view showing an example of a method for manufacturing a display device. Figures 10A to 10C are cross-sectional views showing examples of methods for manufacturing a display device. Figures 11A and 11B are cross-sectional views showing examples of methods for manufacturing a display device. Figure 12 is a flowchart showing an example of a method for driving a display device. Figure 13 is a top view illustrating an example of a method for driving a display device. Figure 14A is a top view showing an example of the configuration of a display device. Figure 14B is a cross-sectional view showing an example of the configuration of a display device. Figures 15A and 15B are cross-sectional views showing examples of methods for manufacturing a display device. Figure 15C is a top view showing examples of methods for manufacturing a display device. Figure 16 is a top view showing an example of the configuration of a display device. Figures 17A to 17D are cross-sectional views showing examples of the configuration of a display device. Figure 18 is a top view showing an example of the configuration of a display device. Figure 19A is a top view showing an example of the configuration of a display device. Figure 19B is a cross-sectional view showing an example of the configuration of a display device. Figure 20 is a top view showing an example of a display device configuration. Figure 21 is a top view showing an example of the configuration of a display device. Figures 22A and 22B are perspective views showing examples of display device configurations. Figures 23A, 23B1, and 23B2 are cross-sectional views showing examples of the configuration of a display device. Figure 24 is a cross-sectional view showing an example of the configuration of a display device. Figure 25 is a cross-sectional view showing an example of the configuration of a display device. Figure 26 is a cross-sectional view showing an example of the configuration of a display device. Figure 27 is a cross-sectional view showing an example of the configuration of a display device. Figure 28 is a cross-sectional view showing an example of the configuration of a display device. Figure 29 is a perspective view showing an example of a display device configuration. Figure 30A is a cross-sectional view showing an example of the configuration of a display device. Figures 30B and 30C are cross-sectional views showing an example of the configuration of a transistor. Figures 31A and 31B1 to 31B4 are cross-sectional views showing examples of the configuration of a display device. Figures 32A to 32F show examples of the configuration of a light-emitting element. Figures 33A to 33D show examples of electronic devices. Figures 34A to 34F show examples of electronic devices. Figures 35A to 35F show examples of electronic devices. Figures 36A to 36G show examples of electronic devices. Figures 37A to 37F show examples of electronic devices. Figures 38A and 38B are top views showing the configuration of a display device according to an embodiment. Figures 39A1, 39A2, 39B1, and 39B2 are images relating to the embodiment. Figure 40 is a top view illustrating the driving method of the display device according to the embodiment. Figures 41A1, 41A2, 41B1, and 41B2 are images relating to the embodiment. Figures 42A and 42B are top views showing the configuration of a display device according to an embodiment. Figures 43A1, 43A2, 43B1, and 43B2 are images relating to the embodiment. Figures 44A and 44B are top views showing the configuration of a display device according to an embodiment. Figures 45A1, 45A2, 45B1, and 45B2 are images relating to the embodiment. Figures 46A and 46B are top views showing the configuration of a display device according to an embodiment. Figures 47A1, 47A2, 47B1, and 47B2 are images relating to the embodiment. Figures 48A and 48B are top views showing the configuration of a display device according to an embodiment. Figures 49A1, 49A2, 49B1, and 49B2 are images relating to the embodiment. [Modes for carrying out the invention]

[0038] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0039] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0040] Furthermore, the position, size, and scope of each component shown in the drawings may not represent the actual position, size, and scope for the sake of ease of understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0041] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0042] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or FMM may be referred to as MML (Metal Maskless) structured devices.

[0043] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention, a method for manufacturing the same, and a method for driving the same will be described with reference to the drawings.

[0044] One aspect of the present invention relates to a display device in which subpixels are arranged in a matrix, and each subpixel is provided with a light-emitting element. The light-emitting element has an island-shaped light-emitting layer, and the display device can display information by emitting light from the light-emitting layer. In one aspect of the present invention, the light-emitting layers are made separately for subpixels of different colors. Here, in one aspect of the present invention, a plurality of subpixels emitting light of the same color are arranged adjacent to each other not only in the column direction but also in the row direction. In other words, it is a structure in which a plurality of subpixels emitting light of the same color are each independently separated.

[0045] In this specification, for example, two subpixels that have the same coordinates representing their position in the row direction but differ by one in their coordinates representing their position in the column direction are referred to as adjacent subpixels in the row direction. For example, the subpixel in the 1st row, 2nd column is adjacent to the subpixel in the 1st row, 1st column in the row direction. Also, two subpixels that have the same coordinates representing their position in the column direction but differ by one in their coordinates representing their position in the row direction are referred to as adjacent subpixels in the column direction. For example, the subpixel in the 2nd row, 1st column is adjacent to the subpixel in the 1st row, 1st column in the column direction. Any element arranged in a matrix, other than subpixels, can be expressed in the same way. For example, to divide multiple subpixels that emit light of the same color into four, one can divide the row in two and the column in two.

[0046] To manufacture a display device with the above configuration, a pixel electrode is formed for each sub-pixel, and then a light-emitting film is formed by, for example, a vacuum deposition method using a metal mask. The light-emitting film is formed on multiple pixel electrodes. Subsequently, the light-emitting film is processed using, for example, a photolithography method. This divides the light-emitting film for each sub-pixel, allowing island-shaped light-emitting layers to be formed for each sub-pixel. It should be noted that fewer processing steps for the light-emitting film using photolithography are preferable as they improve manufacturing costs and yield. Preferably, the number of processing steps for the light-emitting film using photolithography is three or less, and more preferably one.

[0047] As mentioned above, in vacuum deposition methods using metal masks, for example, it is difficult to create fine patterns in the light-emitting layer. On the other hand, by processing the film using photolithography, for example, fine patterns can be formed. Therefore, by processing a light-emitting film formed by vacuum deposition using a metal mask using photolithography, for example, the patterns of the island-like light-emitting layers can be made fine. Consequently, the subpixels can be miniaturized, and a display device according to one aspect of the present invention can be a substantially high-resolution display device. Furthermore, a display device according to one aspect of the present invention can be a display device capable of displaying high-resolution images.

[0048] Furthermore, as mentioned above, in a vacuum deposition method using a metal mask, for example, the thickness of the edges of the light-emitting layer may be thin. On the other hand, in the above method for manufacturing the display device, the edges of the light-emitting film formed by a vacuum deposition method using a metal mask, for example, can be removed by processing using photolithography. Therefore, a display device according to one aspect of the present invention can be a display device in which the thickness of the light-emitting layer is uniform, specifically, a display device in which the difference between the thickness of the central part and the thickness of the edges of the light-emitting layer is small.

[0049] [Example of display device configuration 1] Figure 1 is a top view showing an example configuration of a display device 100, which is a display device according to one aspect of the present invention. The display device 100 has a display unit in which a plurality of pixels 103 are arranged in a matrix, and a connection unit 140 outside the display unit. The connection unit 140 can also be called a cathode contact unit.

[0050] The pixel 103 shown in Figure 1 is composed of three subpixels: subpixel 110a, subpixel 110b, and subpixel 110c. Each of the subpixels 110a, 110b, and 110c has a light-emitting element that emits light of a different color. Examples of subpixels 110a, 110b, and 110c include subpixels of three colors: red (R), green (G), and blue (B), and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). The subpixel 110 shown in Figure 1 can be said to have a stripe arrangement applied to it.

[0051] In this specification, for example, when describing matters common to sub-pixels 110a, 110b, and 110c, they may be referred to as sub-pixel 110. Similarly, when describing matters common to other components distinguished by letters, the letters may be omitted and the corresponding symbols used.

[0052] Figure 1 shows the subpixels 110 in the first row, first column to the second row, sixth column. These subpixels 110 constitute the second row, second column pixel 103.

[0053] In this specification, the row direction is referred to as the X direction, and the column direction is referred to as the Y direction. The X and Y directions intersect, for example, perpendicularly.

[0054] In this specification, for example, symbols such as [ , ] are used to distinguish between pixels 103 and sub-pixels 110 arranged in a matrix. Similar notation may be used for other elements. Also, the position of an element represented using symbols such as [ , ] is sometimes referred to as a coordinate.

[0055] As shown in Figure 1, the subpixels 110 in the first row, first column, first row, second column, second row, first column, and second row, second column are subpixels 110a, the subpixels 110 in the third row, third column, first row, fourth column, second row, third column, and second row, fourth column are subpixels 110b, and the subpixels 110 in the fifth row, fifth column, first row, sixth column, second row, fifth column, and second row, sixth column are subpixels 110c. In other words, subpixels 110 emitting light of the same color are arranged adjacently for at least two rows and two columns. To put it another way, subpixels emitting light of the same color are divided at least 2 in the row direction and 2 in the column direction. It is also possible to arrange subpixels emitting light of the same color adjacently for three or more columns. Furthermore, subpixels emitting light of the same color can be arranged adjacently for three or more rows, for example, all subpixels 110 in the same column can emit light of the same color.

[0056] When the subpixels 110 are arranged as described above, for example, pixel 103[1,1] can be formed by subpixel 110a[1,1], subpixel 110b[1,3], and subpixel 110c[1,5]. Also, pixel 103[1,2] can be formed by subpixel 110a[1,2], subpixel 110b[1,4], and subpixel 110c[1,6]. Furthermore, pixel 103[2,1] can be formed by subpixel 110a[2,1], subpixel 110b[2,3], and subpixel 110c[2,5]. In addition, pixel 103[2,2] can be formed by subpixel 110a[2,2], subpixel 110b[2,4], and subpixel 110c[2,6]. In other words, for example, the sub-pixels 110 constituting pixel 103[1,1] and the sub-pixels 110 constituting pixel 103[1,2] can be arranged alternately, and the sub-pixels 110 constituting pixel 103[2,1] and the sub-pixels 110 constituting pixel 103[2,2] can be arranged alternately.

[0057] Figure 1 shows an example where the connecting portion 140 is located below the display portion in a top view, but it is not particularly limited. The connecting portion 140 only needs to be provided at least one location on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. The top surface shape of the connecting portion 140 can be a strip, L-shape, U-shape, or frame shape, etc. Also, there may be one or more connecting portions 140.

[0058] Figure 2A is a cross-sectional view showing an example of the configuration between the dashed lines A1 and A2 in Figure 1. Figure 2B is a cross-sectional view showing an example of the configuration between the dashed lines B1 and B2 in Figure 1.

[0059] As shown in Figures 2A and 2B, the display device 100 has light-emitting elements 130a, 130b, and 130c provided on a layer 101 containing transistors. Light-emitting element 130a is provided on the sub-pixel 110a shown in Figure 1, light-emitting element 130b is provided on the sub-pixel 110b shown in Figure 1, and light-emitting element 130c is provided on the sub-pixel 110c shown in Figure 1. In other words, light-emitting elements 130a, 130b, and 130c emit light of different colors from each other.

[0060] A protective layer 131 is provided to cover the light-emitting element 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on top of the insulating layer 125 are provided in the region between adjacent light-emitting elements 130. Furthermore, in the region between adjacent light-emitting elements 130 that emit light of different colors, an insulating layer 121 is provided, and insulating layers 125 and 127 are provided on top of the insulating layer 121.

[0061] Figures 2A and 2B show that multiple insulating layers 125 and insulating layers 127 are provided. However, when the display device 100 is viewed from above, the multiple 125 and insulating layers 127 can be connected to each other. In other words, the display device 100 can be configured to have, for example, one insulating layer 125 and one insulating layer 127. The display device 100 may also have multiple insulating layers 125 that are separated from each other, or multiple insulating layers 127 that are separated from each other.

[0062] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting element 130 is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting element 130 is formed, or a dual-emission type that emits light on both sides.

[0063] For example, the layer 101 containing the transistors can be a laminated structure in which multiple transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The layer 101 containing the transistors may have recesses between adjacent light-emitting elements 130. For example, recesses may be provided in the insulating layer located on the outermost surface of the layer 101 containing the transistors. Examples of the configuration of the layer 101 containing the transistors will be described later in a later embodiment.

[0064] The light-emitting element 130a emits, for example, red (R) light. The light-emitting element 130b emits, for example, green (G) light. The light-emitting element 130b emits, for example, blue (B) light. In addition, light-emitting elements 130a, 130b, and 130c may each emit yellow (Y), cyan (C), or magenta (M) light.

[0065] It is preferable to use EL elements such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) as light-emitting elements 130a, 130b, and 130c. Examples of light-emitting materials for EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (e.g., quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. As the TADF material, a material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Since such TADF materials have a shorter emission lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting element.

[0066] A light-emitting element has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0067] The light-emitting element 130 includes a pixel electrode 111 on a layer 101 containing a transistor, an island-shaped EL layer 113 on the pixel electrode 111, a common layer 114 on the EL layer 113, and a common electrode 115 on the common layer 114.

[0068] The EL layer 113 has at least an emissive layer (a layer having an emissive organic compound). Preferably, the EL layer 113 has an emissive layer and a carrier transport layer on the emissive layer. This suppresses exposure of the emissive layer to the outermost surface during the manufacturing process of the display device 100, thereby reducing damage to the emissive layer. This improves the reliability of the display device 100.

[0069] Furthermore, the EL layer 113 may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, the EL layer 113 can be configured in which a hole injection layer, a hole transport layer, an emissive layer, and an electron transport layer are stacked in this order from the pixel electrode 111 side. Alternatively, the EL layer 113 can be configured in which an electron injection layer, an electron transport layer, an emissive layer, and a hole transport layer are stacked in this order from the pixel electrode 111 side.

[0070] In this specification, holes or electrons may be referred to as "carriers." Specifically, a hole injection layer or electron injection layer may be called a "carrier injection layer," a hole transport layer or electron transport layer may be called a "carrier transport layer," and a hole block layer or electron block layer may be called a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable by their cross-sectional shape or characteristics. Furthermore, a single layer may combine the functions of two or three of the carrier injection layer, carrier transport layer, and carrier block layer.

[0071] The common layer 114 may have, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may have an electron transport layer and an electron injection layer stacked together, or a hole transport layer and a hole injection layer stacked together. The common layer 114 and the common electrode 115 are shared by a plurality of light-emitting elements 130, for example, by all of the light-emitting elements 130.

[0072] The configuration of the light-emitting element in this embodiment is not particularly limited and may be a single structure or a tandem structure. Examples of light-emitting element configurations will be described later in the embodiments.

[0073] The EL layer 113 of the light-emitting element 130a is designated as EL layer 113a. The EL layer 113 of the light-emitting element 130b is designated as EL layer 113b. The EL layer 113 of the light-emitting element 130c is designated as EL layer 113c.

[0074] As described above, an insulating layer 121 is provided in the region between adjacent light-emitting elements 130 that emit light of different colors. The insulating layer 121 is provided so as to cover the ends of the pixel electrodes 111. This prevents short circuits of the pixel electrodes 111 between adjacent light-emitting elements 130. Thus, false illumination of the light-emitting elements 130 can be prevented.

[0075] The insulating layer 121 can be a single-layer structure or a multilayer structure using one or both of an inorganic insulating film and an organic insulating film.

[0076] When an inorganic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes 111, impurities are less likely to enter the EL layer 113 compared to when an organic insulating film is used, thereby improving the reliability of the light-emitting element 130. When an organic insulating film is used as the insulating layer 121, the step coverage is higher compared to when an inorganic insulating film is used, and it is less affected by the shape of the pixel electrodes 111. Therefore, short circuits of the light-emitting element 130 can be prevented, and false light emission of the light-emitting element 130 can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into, for example, a tapered shape.

[0077] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle between the inclined side surface and the substrate surface (also called the taper angle) is less than 90°.

[0078] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimidoamide resin, polysiloxane resin, benzocyclobutene resin, and phenolic resin. Examples of inorganic insulating films that can be used for the insulating layer 121 include oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride film and aluminum nitride film.

[0079] The sides of the EL layer 113 are covered by insulating layers 125 and 127. Furthermore, among adjacent light-emitting elements 130, those emitting light of the same color have insulating layers 125 and 127 not only between the EL layers 113 but also between the pixel electrodes 111. This allows insulating layers 125 and 127 to cover the sides of the pixel electrodes 111. As a result, contact between the common layer 114 or common electrode 115 and the pixel electrode 111 or EL layer 113 can be suppressed. Therefore, short circuits of the light-emitting elements 130 can be prevented. Consequently, false light emission of the light-emitting elements 130 can be prevented.

[0080] In the examples shown in Figures 2A and 2B, the insulating layer 121 is not provided in the region between adjacent light-emitting elements 130 that emit light of the same color. Even in this case, by providing insulating layers 125 and 127, short circuits of the light-emitting elements 130 can be prevented, and false light emission of the light-emitting elements 130 can be prevented. However, insulating layer 121 may be provided in the region between light-emitting elements 130 that emit light of the same color. This can improve the symmetry of the shape of the EL layer 113, for example.

[0081] The insulating layer 125 can be configured to be in contact with at least the side surface of the EL layer 113. The insulating layer 127 is provided on the insulating layer 125 so as to fill any recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with at least the side surface of the EL layer 113 via the insulating layer 125.

[0082] By providing insulating layers 125 and 127, the spaces between adjacent island-shaped layers, such as the EL layer 113 and the pixel electrode 111, can be filled. This reduces the unevenness of the surface of layers formed on island-shaped layers (e.g., common electrode 115), making it flatter. Consequently, the coverage of the common electrode 115 can be improved, and step breaks in the common electrode 115 can be prevented. Alternatively, it can suppress the local thinning of the common electrode 115 due to step differences, which would increase its electrical resistance.

[0083] To improve the flatness of the formation surfaces of the common layer 114 and the common electrode 115, it is preferable that the heights of the upper surfaces of the insulating layer 125 and the insulating layer 127 coincide with or approximately coincide with the height of the upper surface at the edge of the EL layer 113. Furthermore, it is preferable that the upper surface of the insulating layer 127 has a flat shape, but it may have convex portions, convex curved surfaces, concave curved surfaces, or recesses.

[0084] Furthermore, as mentioned above, the insulating layer 125 can be provided in contact with the island-shaped layers, and the insulating layer 127 can be provided on top of the insulating layer 125. This prevents peeling of the island-shaped layers. The close contact between the insulating layer and the island-shaped layers provides the effect of fixing or bonding adjacent island-shaped layers to each other. This improves the reliability of the light-emitting element 130. It also improves the manufacturing yield of the light-emitting element 130.

[0085] Furthermore, it is not necessary to provide either the insulating layer 125 or the insulating layer 127. For example, by forming an insulating layer 125 with a single-layer structure using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the EL layer 113. This can improve the reliability of the display device 100.

[0086] The insulating layer 125 has regions that are in contact with the sides of the EL layers 113a, 113b, and 113c, and functions as a protective insulating layer for the EL layers 113a, 113b, and 113c. By providing the insulating layer 125, it is possible to suppress the intrusion of impurities (oxygen, moisture, etc.) into the interior from the sides of the EL layers 113a, 113b, and 113c, resulting in a highly reliable display device.

[0087] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride film and aluminum nitride film. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer during the formation of the insulating layer 127, which will be described later. In particular, by applying an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) to the insulating layer 125, an insulating layer 125 with fewer pinholes and excellent protection for the EL layer can be formed. Alternatively, the insulating layer 125 may have a laminated structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a laminated structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0088] In this specification, "oxide nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0089] Preferably, the insulating layer 125 functions as a barrier insulating layer against at least one of water and oxygen. Furthermore, preferably, the insulating layer 125 has the function of suppressing the diffusion of at least one of water and oxygen. Also, preferably, the insulating layer 125 has the function of capturing or fixing (also known as gettering) at least one of water and oxygen.

[0090] The insulating layer 125 has the function of a barrier insulating layer or a gettering function, thereby suppressing the intrusion of impurities (typically at least one of water and oxygen) that could diffuse from the outside into each light-emitting element. This configuration makes it possible to provide a highly reliable light-emitting element and, furthermore, a highly reliable display device.

[0091] Furthermore, it is preferable that the insulating layer 125 has a low impurity concentration. This prevents impurities from mixing from the insulating layer 125 into the EL layer and degrading the EL layer. Also, by lowering the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration and a sufficiently low carbon concentration, preferably both.

[0092] For example, the hydrogen concentration in the insulating layer 125 is 1.0 × 10⁻⁶. 22 atoms / cm 3 Preferably, it is 9.0 × 10 21 atoms / cm 3 It is more preferable that the following conditions apply: 8.0 × 10 21 atoms / cm 3more preferably not more than 6.0×10 21 atoms / cm 3 and even more preferably not more than the above value. For example, as the insulating layer 125, it is preferable to use an aluminum oxide film having a hydrogen concentration within the above range.

[0093] For example, the carbon concentration of the insulating layer 125 is 2.5×10 21 atoms / cm 3 preferably not more than 2.0×10 21 atoms / cm 3 more preferably not more than 1.0×10 21 atoms / cm 3 more preferably not more than 6.0×10 20 atoms / cm 3 and even more preferably not more than the above value. For example, as the insulating layer 125, it is preferable to use an aluminum oxide film having a carbon concentration within the above range.

[0094] Examples of the method for forming the insulating layer 125 include a sputtering method, a chemical vapor deposition (CVD: Chemical Vapor Deposition) method, a pulsed laser deposition (PLD: Pulsed Laser Deposition) method, and an ALD method. The insulating layer 125 is preferably formed using an ALD method that provides excellent coverage.

[0095] By increasing the substrate temperature during film formation of the insulating layer 125, the insulating layer 125 having a low impurity concentration and high barrier properties against at least one of water and oxygen can be formed even when the film thickness is small. Therefore, the substrate temperature is preferably 60°C or higher, more preferably 80°C or higher, even more preferably 100°C or higher, and still more preferably 120°C or higher. On the other hand, since the insulating layer 125 is formed after forming the island-shaped EL layer, it is preferably formed at a temperature lower than the heat resistant temperature of the EL layer. Therefore, the substrate temperature is preferably 200°C or lower, more preferably 180°C or lower, even more preferably 160°C or lower, still more preferably 150°C or lower, and particularly preferably 140°C or lower.

[0096] Indicators of heat resistance temperature include, for example, the glass transition temperature, softening temperature, melting point, thermal decomposition temperature, and 5% weight loss temperature. The heat resistance temperature of the EL layer can be any of these temperatures, preferably the lowest of these temperatures.

[0097] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the recesses in the insulating layer 125 formed between adjacent light-emitting elements. In other words, the presence of the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. Suitable insulating layers 127 include those made of organic materials. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin can be used as the insulating layer 127. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0098] The insulating layer 127 may be made of a material that absorbs visible light. By absorbing the light emitted from the light-emitting element, the insulating layer 127 can suppress light leakage (stray light) from the light-emitting element to adjacent light-emitting elements through the insulating layer 127. This can improve the display quality of the display device.

[0099] It is preferable to have a protective layer 131 on the light-emitting element 130. Providing the protective layer 131 can improve the reliability of the light-emitting element. The protective layer 131 may be a single layer or a laminated structure of two or more layers.

[0100] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0101] The presence of an inorganic film in the protective layer 131 prevents oxidation of the common electrode 115 and suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting element 130, thereby suppressing degradation of the light-emitting element and improving the reliability of the display device.

[0102] For the protective layer 131, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride films and aluminum nitride films.

[0103] The protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0104] Furthermore, the protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0105] When the light emitted from a light-emitting element is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0106] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress impurities (water, oxygen, etc.) from entering the EL layer.

[0107] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film.

[0108] The protective layer 131 may have a two-layer structure formed using different film deposition methods. Specifically, the first layer of the protective layer 131 may be formed using the ALD method, and the second layer of the protective layer 131 may be formed using the sputtering method.

[0109] A light-shielding layer may be provided on the side of the substrate 120 facing the resin layer 122. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (diffusion films, etc.), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, or an impact-absorbing layer may also be placed on the outside of the substrate 120.

[0110] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, or semiconductor. The substrate on the side that extracts light from the light-emitting element should be made of a material that transmits the light. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0111] The substrate 120 can be made from polyester resins such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon or aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, or cellulose nanofiber, etc. Glass with a thickness sufficient to provide flexibility may also be used for the substrate 120.

[0112] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy can also be said to have low birefringence (low amount of birefringence).

[0113] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0114] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0115] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0116] As the resin layer 122, various curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, or anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Alternatively, for example, an adhesive sheet may be used.

[0117] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0118] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, and for conductive layers of light-emitting elements (conductive layers that function as pixel electrodes or common electrodes).

[0119] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin or epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon nitride, or aluminum oxide.

[0120] Of the pixel electrodes 111 and the common electrode 115, the electrode that extracts light preferably uses a conductive film that transmits visible light. Furthermore, it is preferable to use a conductive film that reflects visible light on the electrode that does not extract light.

[0121] As materials for forming the pair of electrodes (pixel electrode and common electrode) of a light-emitting element, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), as well as silver-containing alloys such as silver-magnesium alloys and silver-palladium-copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (for example, lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, and the like can also be used.

[0122] It is preferable that the light-emitting element has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting element has an electrode that is both transparent and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other electrode has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0123] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a visible light transmittance (light with a wavelength of 400 nm or more and less than 750 nm) of 40% or more in the light-emitting element. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0124] Figure 2C is a cross-sectional view showing an example of the configuration between the dashed-dotted line C1 and C2 in Figure 1, and is a cross-sectional view showing an example of the configuration of the connection portion 140. In the connection portion 140, a connection electrode 123 is provided on the layer 101 containing the transistor, and an insulating layer 121 is provided so as to cover the ends of the connection electrode 123.

[0125] The common electrode 115 is electrically connected to the connecting electrode 123 provided in the connection section 140. As a result, the same potential is supplied to the common electrode 115 of each color light-emitting element. The connecting electrode 123 can be made of the same material and a conductive layer formed using the same process as the pixel electrode 111.

[0126] In Figure 2C, a common layer 114 is provided on the connecting electrode 123, and the connecting electrode 123 and the common electrode 115 are electrically connected via the common layer 114. The common layer 114 does not necessarily have to be provided at the connection part 140. For example, in Figure 2D, a common layer 114 is not provided on the connecting electrode 123, and the connecting electrode 123 and the common electrode 115 are directly connected. For example, by using a mask to define the film deposition area (also called an area mask or rough metal mask, etc.), the areas where film is deposited on the common layer 114 and the common electrode 115 can be changed.

[0127] Figure 3A is an enlarged view of the area enclosed by the dashed line in Figure 2A. As shown in Figure 3A, the edge of the EL layer 113 can be located inside the edge of the pixel electrode 111.

[0128] Figure 3B shows a modified configuration of the one shown in Figure 3A, in which the end of the pixel electrode 111 has a tapered shape. The tapered shape of the side surface of the pixel electrode 111 is preferable because it improves the coverage of the insulating layer 125 provided along the side surface of the pixel electrode 111. Furthermore, the tapered shape of the side surface of the pixel electrode 111 is preferable because it allows for the effective removal of foreign matter (e.g., dust or particles) during the manufacturing process through processes such as washing.

[0129] Figures 3C1 and 3C2 show modified configurations of the one shown in Figure 3A. Figure 3C1 shows an example where the edge of the EL layer 113 is aligned with, or approximately aligned with, the edge of the pixel electrode 111. Figure 3C2 shows an example where the edge of the EL layer 113 is located outside the edge of the pixel electrode 111. In Figure 3C2, the EL layer 113 is provided so as to cover the edge of the pixel electrode 111.

[0130] Furthermore, if the edges are aligned or roughly aligned, and the top surface shapes match or roughly match, then in a top view, at least a portion of the contours overlap between the stacked layers. This includes, for example, cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer. In these cases as well, the edges are said to be roughly aligned, or the top surface shapes roughly match.

[0131] Figure 4 shows a modified configuration of the one shown in Figure 3A, in which the end of the pixel electrode 111 has a tapered shape, and the end of the EL layer 113 is located outside (towards the insulating layer 125) of the end of the pixel electrode 111. The EL layer 113 shown in Figure 4 is provided on the pixel electrode 111 and on the layer 101 containing the transistor so as to cover the end of the pixel electrode 111. Here, since the end of the pixel electrode 111 has a tapered shape, the EL layer 113 has a tapered portion 116 in cross-sectional view. Specifically, the EL layer 113 has a tapered portion 116 between the pixel electrode 111 and the insulating layer 125.

[0132] When the EL layer 113 is provided so as to cover the ends of the pixel electrodes 111, if the ends of the pixel electrodes 111 have a tapered shape, the coverage of the pixel electrodes 113 by the EL layer 113 can be improved. This suppresses the occurrence of stepped breaks and localized thinning of the EL layer 113. Therefore, the display device 100 can be made into a highly reliable display device.

[0133] Furthermore, Figure 4 shows an example where the bottom surface of the insulating layer 125 is located below the bottom surface of the EL layer 113a, and the bottom surface of the EL layer 113a is located below the bottom surface of the pixel electrode 111. For example, the layer 101 containing the transistor can be configured to have a recess between the EL layers 113. As will be described in detail later, this recess is formed when the EL layers 113 are formed.

[0134] Figures 5A to 5E show modified versions of the configuration shown in Figure 3A. In the configuration shown in Figure 5A, the upper surface of the insulating layer 127 has a region that is higher than the upper surface of the EL layer 113. In this case, the upper surface of the insulating layer 127 can have a shape that bulges in the center and its vicinity in a cross-sectional view, that is, a shape that has a convex curved surface.

[0135] In Figure 5B, the upper surface of the insulating layer 127 has a shape that bulges gently towards the center, i.e., a convex curved surface, and a shape that is concave in the center and its vicinity, i.e., a concave curved surface. The insulating layer 127 has a region that is higher than the upper surface of the EL layer 113. Furthermore, the display device 100 having the configuration shown in Figure 5B has at least one of the sacrificial layer 118 and sacrificial layer 119, which will be described later, and the insulating layer 127 has a region that is higher than the upper surface of the EL layer 113, and this region is located on at least one of the sacrificial layer 118 and sacrificial layer 119.

[0136] In this specification, the sacrificial layer may be referred to as the mask layer, and the sacrificial film may be referred to as the mask film.

[0137] In Figure 5C, the upper surface of the insulating layer 127 has a region that is lower than the upper surface of the EL layer 113. Furthermore, in cross-sectional view, the upper surface of the insulating layer 127 has a concave shape, meaning that the center and its vicinity are recessed.

[0138] In Figure 5D, the upper surface of the insulating layer 125 has a region that is higher than the upper surface of the EL layer 113. That is, on the surface where the common layer 114 is formed, the insulating layer 125 protrudes, forming a convex portion.

[0139] In forming the insulating layer 125, for example, if the insulating layer 125 is formed to match or approximately match the height of the sacrificial layer, a protruding shape of the insulating layer 125 may be formed, as shown in Figure 5D.

[0140] In Figure 5E, the upper surface of the insulating layer 125 has a region that is lower than the upper surface of the EL layer 113. That is, a recess is formed by the insulating layer 125 on the surface of the common layer 114.

[0141] Thus, the insulating layer 125 and the insulating layer 127 can be made into various shapes.

[0142] Figures 6A, 6B, and 6C are modified examples of the configurations shown in Figures 2A, 2B, and 2C, respectively. The configurations shown in Figures 6A to 6C differ from those shown in Figures 2A to 2C in that the insulating layer 121 is not provided.

[0143] By omitting the insulating layer 121 from the display device 100, the light-emitting area can be extended to the edges of the pixel electrodes 111, thereby enabling the display device 100 to have a high aperture ratio.

[0144] [Example 1 of a method for manufacturing a display device] Next, an example of a method for manufacturing the display device 100 having the configuration shown in Figure 1 and Figures 2A to 2C will be described. In the cross-sectional view showing this example of a manufacturing method, the cross-sectional view between the dashed lines A1-A2 and the cross-sectional view between C1-C2 in Figure 1 are shown side by side.

[0145] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, CVD, vacuum deposition, pulsed laser deposition (PLD), ALD, and other methods. CVD methods include plasma enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0146] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife coating, slit coating, roll coating, curtain coating, and knife coating.

[0147] Furthermore, when processing the thin film that constitutes the display device, it can be processed using, for example, photolithography. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, lift-off lithography, etc. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0148] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film, for example by etching, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0149] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used for exposure. An electron beam can also be used instead of light for exposure. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0150] For etching thin films, dry etching, wet etching, or sandblasting methods can be used.

[0151] First, a pixel electrode 111 and a connecting electrode 123 are formed on a layer 101 containing a transistor. Next, an insulating layer 121 is formed to cover the ends of the pixel electrode 111 and the ends of the connecting electrode 123 (Figure 7A). For the formation of the pixel electrode 111, for example, a spin coating method, a spray coating method, or a screen printing method can be used. For the formation of the insulating layer 121, a sputtering method, a vacuum deposition method, a CVD method, or a sputtering method can be used.

[0152] Next, an EL film 180a, which will later become the EL layer 113a, is formed on the pixel electrode 111 and on the layer 101 containing the transistor (Figure 7B). The EL film 180a can be formed using an FMM 191a, for example, by a deposition method using an FMM 191a, specifically by a vacuum deposition method. Figure 7B shows the film being deposited using the so-called face-down method, where the substrate is inverted so that the surface to be deposited is facing downwards. In other drawings as well, when film deposition is performed using an FMM, the face-down method will be shown.

[0153] Furthermore, an EL film 180b, which will later become EL layer 113b, is formed on the pixel electrode 111 and on the layer 101 containing the transistor (Figure 7C). In addition, an EL film 180c, which will later become EL layer 113c, is formed on the pixel electrode 111 and on the layer 101 containing the transistor (Figure 7D). Figure 8A shows a top view of the EL films 180a, 180b, and 180c when they are formed. In Figure 8A, for example, the region where two types of films overlap is indicated by a dotted line. The same notation is used in the other top views.

[0154] As shown in Figures 7C, 7D, and 8A, the edge of EL film 180b overlaps with EL film 180a, and the edge of EL film 180c overlaps with EL film 180b. However, EL film 180b and EL film 180a do not need to overlap, and EL film 180c and EL film 180b do not need to overlap.

[0155] EL films 180b and 180c can be formed in the same manner as EL film 180a. For example, EL film 180b can be formed by a deposition method using FMM191b, and EL film 180c can be formed by a deposition method using FMM191c. When forming EL film 180 using FMM191, contact between FMM191 and the pixel electrode 111 can be prevented by providing an insulating layer 121.

[0156] When forming the EL film 180 using a vapor deposition method, the EL film 180 may contain low-molecular-weight compounds. The EL film 180 has at least a film containing a luminescent compound (luminescent film). Preferably, the EL film 180 has a luminescent film and a film that functions as a carrier transport layer on the luminescent film. This suppresses exposure of the luminescent film to the outermost surface during the manufacturing process of the display device 100, thereby reducing damage to the luminescent film. This improves the reliability of the display device 100.

[0157] Furthermore, the EL film 180 can be configured by laminating one or more films that function as a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, or an electron injection layer. For example, the EL film 180 can be configured by laminating a film that functions as a hole injection layer, a film that functions as a hole transport layer, an emissive film, and an electron transport layer in this order. Alternatively, the EL film 180 can be configured by laminating a film that functions as an electron injection layer, an electron transport layer, an emissive film, and a film that functions as a hole transport layer in this order.

[0158] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0159] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) or aromatic amines (compounds having an aromatic amine skeleton) that have high hole transport capabilities.

[0160] The light-emitting layer is a layer containing a light-emitting material. The light-emitting layer may contain one or more types of light-emitting materials. As the light-emitting material, a material that exhibits a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red may be used as appropriate. In addition, a material that emits near-infrared light may be used as the light-emitting material. For example, the light-emitting layer of EL film 180a may contain a material that exhibits a red light-emitting color. The light-emitting layer of EL film 180b may contain a material that exhibits a green light-emitting color. Furthermore, the light-emitting layer of EL film 180c may contain a material that exhibits a blue light-emitting color.

[0161] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0162] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0163] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0164] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0165] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting material (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting material, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting element.

[0166] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, or other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds, etc., which have high electron transport capabilities.

[0167] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0168] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF). x (where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0169] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, or pyridazine ring), and a triazine ring can be used.

[0170] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In general, the highest occupied molecular orbital (HOMO) level and the LUMO level of an organic compound can be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, or inverse photoelectron spectroscopy.

[0171] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), or 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0172] Next, a sacrificial film 118A, which will later become the sacrificial layer 118, and a sacrificial film 119A, which will later become the sacrificial layer 119, are formed in order on the EL film 180, the insulating layer 121, and the connecting electrode 123. For the sacrificial films 118A and 119A, films with high resistance to the processing conditions of the EL film 180 are used, specifically films with a high selectivity ratio for etching with the EL film 180.

[0173] For the formation of sacrificial films 118A and 119A, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition can be used. It is preferable that the sacrificial film 118A, which is formed in contact with the EL film 180, is formed using a method that causes less damage to the EL film 180 than the sacrificial film 119A. For example, it is preferable to form the sacrificial film 118A using the ALD or vacuum deposition method rather than the sputtering method. Furthermore, the sacrificial films 118A and 119A are formed at a temperature lower than the heat resistance temperature of the EL film 180. Typical substrate temperatures for forming the sacrificial films 118A and 119A are 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0174] It is preferable to use films that can be removed by wet etching for the sacrificial films 118A and 119A. By using wet etching, the damage to the EL film 180 during processing of the sacrificial films 118A and 119A can be reduced compared to when using dry etching.

[0175] Furthermore, it is preferable to use a sacrificial film 118A that has a high etching selectivity ratio with respect to the sacrificial film 119A.

[0176] In the manufacturing process of the display device according to this embodiment, it is desirable that each layer constituting the EL film (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, etc.) is difficult to process, and that the various sacrificial layers are difficult to process during the manufacturing process of each layer constituting the EL film. It is desirable to select the material and manufacturing method of the sacrificial layer and the manufacturing method of the EL layer taking these factors into consideration.

[0177] In this embodiment, an example is shown in which the sacrificial layer is formed with a two-layer structure consisting of sacrificial film 118A and sacrificial film 119A. However, the sacrificial layer may be a single-layer structure or a laminated structure of three or more layers.

[0178] For example, sacrificial films 118A and 119A can be inorganic films such as metal films, alloy films, metal oxide films, semiconductor films, and inorganic insulating films, respectively.

[0179] Sacrificial films 118A and 119A can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials. In particular, it is preferable to use low-melting-point materials such as aluminum or silver. It is preferable to use a metallic material capable of shielding ultraviolet light in one or both of the sacrificial films 118A and 119A, as this can suppress irradiation of the EL layer with ultraviolet light and suppress deterioration of the EL layer.

[0180] Furthermore, metal oxides such as In-Ga-Zn oxide can be used for sacrificial films 118A and 119A, respectively. For example, an In-Ga-Zn oxide film can be formed as sacrificial film 118A or sacrificial film 119A using a sputtering method. In addition, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), or indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide) can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0181] In addition, element M (where M is one or more selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium. In particular, it is preferable that M be one or more selected from gallium, aluminum, or yttrium.

[0182] Furthermore, various inorganic insulating films that can be used in the protective layer 131 can be used as sacrificial films 118A and 119A, respectively. In particular, oxide insulating films are preferred because they have higher adhesion to the EL layer compared to nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as sacrificial films 118A and 119A, respectively. For example, an aluminum oxide film can be formed as sacrificial film 118A or 119A using the ALD method. Using the ALD method is preferred because it reduces damage to the substrate (especially the EL layer).

[0183] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the sacrificial film 118A, and an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using the sputtering method can be used as the sacrificial film 119A.

[0184] Furthermore, the same inorganic insulating film can be used for both the sacrificial film 118A and the insulating layer 125 that is formed later. For example, an aluminum oxide film formed using the ALD method can be used for both the sacrificial film 118A and the insulating layer 125. Here, the same film formation conditions may be applied to the sacrificial film 118A and the insulating layer 125, or different film formation conditions may be applied to them. For example, by forming the sacrificial film 118A under the same conditions as the insulating layer 125, the sacrificial film 118A can be made into an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the sacrificial film 118A is a layer that will be mostly or completely removed in a later process, it is preferable that it be easy to process. For this reason, it is preferable to form the sacrificial film 118A under conditions where the substrate temperature during film formation is lower than that of the insulating layer 125.

[0185] One or both of the sacrificial films 118A and 119A may be made of materials soluble in a chemically stable solvent. Materials soluble in water or alcohol are particularly suitable. When forming such a film, it is preferable to coat the material in a wet deposition method while dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the EL film.

[0186] Sacrificial films 118A and 119A may be formed using wet film formation methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating, respectively.

[0187] Sacrificial films 118A and 119A may be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin, respectively.

[0188] Next, a resist mask 190 is formed on the sacrificial film 119A (Figure 8B). The resist mask 190 can be formed by applying a photosensitive resin (photoresist), followed by exposure and development.

[0189] The resist mask may be made using either a positive-type resist material or a negative-type resist material.

[0190] The resist mask 190 is provided in a position that overlaps with the pixel electrode 111. Preferably, the resist mask 190 has one island-shaped pattern for each sub-pixel 110.

[0191] Next, a resist mask 190 is used to remove a portion of the sacrificial film 119A, forming a sacrificial layer 119. The sacrificial layer 119 remains on the pixel electrode 111 and on the connecting electrode 123.

[0192] When etching the sacrificial film 119A, it is preferable to use etching conditions with a high selectivity ratio so that the sacrificial film 118A is not removed by the etching. Furthermore, since the EL film 180 is not exposed during the processing of the sacrificial film 119A, there is a wider range of processing methods to choose from than for the processing of the sacrificial film 118A. Specifically, even when using an etching gas containing oxygen during the processing of the sacrificial film 119A, the degradation of the EL film 180 can be further suppressed.

[0193] Subsequently, the resist mask 190 is removed. For example, the resist mask 190 can be removed by ashing using oxygen plasma. Alternatively, oxygen gas and noble gases (also called rare gases) such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190 may be removed by wet etching. In this case, since the sacrificial film 118A is located on the outermost surface and the EL film 180 is not exposed, damage to the EL film 180 during the resist mask 190 removal process can be suppressed. Furthermore, the range of selectable methods for removing the resist mask 190 can be broadened.

[0194] Next, the sacrificial layer 119 is used as a mask (also called a hard mask) to remove a portion of the sacrificial film 118A and form the sacrificial layer 118.

[0195] Sacrificial films 118A and 119A can be processed by wet etching or dry etching, respectively. It is preferable to process sacrificial films 118A and 119A by anisotropic etching.

[0196] By using the wet etching method, the damage to the EL film 180 during the processing of sacrificial films 118A and 119A can be reduced compared to using the dry etching method. When using the wet etching method, it is preferable to use chemical solutions such as a developer, aqueous solution of tetramethylammonium hydroxide (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0197] Furthermore, when using the dry etching method, the degradation of the EL film 180 can be suppressed by not using an oxygen-containing gas as the etching gas. When using the dry etching method, it is preferable to use a gas containing noble gases (also called rare gases) such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as the etching gas.

[0198] For example, when an aluminum oxide film formed using the ALD method is used as the sacrificial film 118A, the sacrificial film 118A can be processed by dry etching using CHF3 and He. Also, when an In-Ga-Zn oxide film formed using the sputtering method is used as the sacrificial film 119A, the sacrificial film 119A can be processed by wet etching using diluted phosphoric acid. Alternatively, it may be processed by dry etching using CH4 and Ar. Alternatively, the sacrificial film 119A can be processed by wet etching using diluted phosphoric acid. Furthermore, when a tungsten film formed using the sputtering method is used as the sacrificial film 119A, the sacrificial film 119A can be processed by dry etching using SF6, CF4 and O2, or CF4, Cl2 and O2.

[0199] Next, the EL film 180 is processed to form the EL layer 113. For example, the sacrificial layers 119 and 118 are used as a hard mask to remove a portion of the EL film 180 and form the EL layer 113 (Figures 9A and 9B). Specifically, the EL film 180a is removed to form the EL layer 113a, the EL film 180b is removed to form the EL layer 113b, and the EL film 180c is removed to form the EL layer 113c. Note that a portion of the EL film 180b may remain on the EL layer 113a. Also, a portion of the EL film 180c may remain on the EL layer 113b.

[0200] As shown in Figures 8A and 9A, multiple EL layers 113 can be formed by processing the EL film 180. In other words, the EL film 180 can be divided into multiple EL layers 113. Figures 8A and 9A show examples in which the EL film 180a is divided into a 2x2 EL layer 113a, the EL film 180b is divided into a 2x2 EL layer 113b, and the EL film 180c is divided into a 2x2 EL layer 113c, but the present invention is not limited to these. For example, the EL film 180 may be divided into 3 or more rows of EL layers 113, or into 3 or more columns of EL layers 113. Note that the EL film 180 does not have to be divided in either the row direction or the column direction. In this case, the shape of the EL layer 113 can be strip-shaped.

[0201] The EL film 180 is preferably processed by anisotropic etching. In particular, anisotropic dry etching is preferred. Alternatively, wet etching may be used. When etching the EL film 180, for example, the upper surface of the insulating layer located on the outermost surface of the layer 101 containing the transistor may be etched. This may result in the formation of a recess in the layer 101 containing the transistor.

[0202] When using the dry etching method, the degradation of the EL film 180 can be suppressed by not using an etching gas that contains oxygen.

[0203] Furthermore, an etching gas containing oxygen may be used. Including oxygen in the etching gas can increase the etching rate. Therefore, etching can be performed under low power conditions while maintaining a sufficiently fast etching rate. This suppresses damage to the EL film 180. Additionally, it suppresses problems such as the adhesion of reaction products generated during etching.

[0204] When using the dry etching method, it is preferable to use an etching gas containing one or more noble gases (also called rare gases) such as H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He, Ar. Alternatively, it is preferable to use an etching gas containing one or more of these and oxygen. Or, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He, can be used as the etching gas. Also, for example, a gas containing CF4, He, and oxygen can be used as the etching gas.

[0205] As described above, in one aspect of the present invention, a resist mask 190 is formed on the sacrificial film 119A, and a sacrificial layer 119 is formed by removing a portion of the sacrificial film 119A using the resist mask 190. Subsequently, the EL layer 113 is formed by removing a portion of the EL film 180 using the sacrificial layer 119 as a hard mask. Thus, it can be said that the EL layer 113 is formed by processing the EL film 180 using photolithography. Alternatively, a portion of the EL film 180 may be removed using the resist mask 190, and then the resist mask 190 may be removed.

[0206] As mentioned above, for example, it is difficult to form fine patterns using vacuum deposition methods with metal masks. Therefore, if an attempt is made to form the EL layer 113 without using photolithography, it is difficult to increase the resolution of the display device. On the other hand, in a method for manufacturing a display device according to one aspect of the present invention, for example, an EL film 180 is formed by vacuum deposition using a metal mask, and then the EL layer 113 is formed by dividing the EL film 180 using photolithography. Therefore, the pattern of the EL layer 113 can be made into a fine pattern. Consequently, the sub-pixels 110 can be miniaturized, and thus the pixels 103 can be miniaturized. As a result, the display device 100 can be a substantially high-resolution display device. Furthermore, the display device 100 can be a display device capable of displaying high-resolution images.

[0207] Furthermore, by processing the EL film 180 to form the EL layer 113, it is possible to stack EL films 180 of different colors. This allows for a wider alignment margin for the FMM 191 while creating a finer pattern for the EL layer 113.

[0208] Furthermore, as mentioned above, when forming a layer by a vacuum deposition method using a metal mask, for example, the thickness of the edges of the layer may be thinner than the thickness of the center of the layer. On the other hand, in a method for manufacturing a display device according to one aspect of the present invention, at least a portion of the edges of the EL film 180 can be removed by processing using photolithography. Therefore, the display device 100 can be a display device in which the thickness of the EL layer 113 is uniform, specifically, a display device in which the difference between the thickness of the center and the thickness of the edges of the EL layer 113 is small.

[0209] When processing the EL film 180, one possible method is to process it using photolithography directly above the light-emitting film of the EL film 180. In this case, the light-emitting layer may be damaged (for example, by processing), and its reliability may be significantly impaired. Therefore, in order to manufacture the display device 100, sacrificial layers 118 and 119 are formed on a film located above the light-emitting film (for example, a carrier transport layer or carrier injection layer, more specifically a film that functions as an electron transport layer, hole transport layer, electron injection layer, or hole injection layer), and the light-emitting film is processed. This makes the display device 100 a highly reliable display device.

[0210] Next, an insulating film 125A, which will later become the insulating layer 125, is formed to cover the EL layer 113, the sacrificial layer 118, and the sacrificial layer 119.

[0211] As the insulating film 125A, it is preferable to form an insulating film with a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, under conditions where the substrate temperature is 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0212] For the insulating film 125A, it is preferable to form an aluminum oxide film using, for example, the ALD method.

[0213] Next, an insulating film 127A is formed on the insulating film 125A (Figure 10A). A photosensitive material can be used as the insulating film 127A, for example, a photosensitive resin. The insulating film 127A can be formed using wet film formation methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating. In particular, it is preferable to form the organic insulating film that will become the insulating layer 127 by spin coating.

[0214] It is preferable that insulating films 125A and 127A are formed using a method that minimizes damage to the EL layer 113. In particular, since insulating film 125A is formed in contact with the side surface of the EL layer 113, it is preferable that it be formed using a method that minimizes damage to the EL layer 113 more than insulating film 127A. Furthermore, insulating films 125A and 127A are formed at a temperature lower than the heat resistance temperature of the EL layer 113. Typical substrate temperatures when forming insulating films 125A and 127A are 200°C or lower, preferably 180°C or lower, more preferably 160°C or lower, more preferably 150°C or lower, and more preferably 140°C or lower. For example, an aluminum oxide film can be formed as insulating film 125A using the ALD method. The ALD method is preferable because it can minimize film formation damage and allow for the formation of a film with high coverage.

[0215] Next, the insulating film 127A is processed to form the insulating layer 127. For example, if a photosensitive material is used as the insulating film 127A, the insulating layer 127 can be formed by exposing and developing the insulating film 127A. Etching may be performed to adjust the surface height of the insulating layer 127. The insulating layer 127 may also be processed, for example, by ashing using oxygen plasma.

[0216] Next, at least a portion of the insulating film 125A is removed to form the insulating layer 125. Sacrificial layers 119 and 118 are also removed (Figure 10B). This exposes at least a portion of the upper surface of the EL layer 113 and the upper surface of the connecting electrode 123.

[0217] The insulating film 125A is preferably processed by a dry etching method. The insulating film 125A is preferably processed by anisotropic etching. The insulating film 125A can be processed using an etching gas that can be used when processing the sacrificial layer.

[0218] It is preferable to use a wet etching method to remove the sacrificial layer. This reduces the damage inflicted on the EL layer 113 when removing the sacrificial layer, compared to, for example, using a dry etching method.

[0219] Alternatively, the sacrificial layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of alcohols include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0220] After removing the sacrificial layer, a drying treatment may be performed to remove water contained in the EL layer and water adsorbed on the surface of the EL layer. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 120°C. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0221] Next, a common layer 114 is formed on the insulating layer 125, the insulating layer 127, and the EL layer 113. After that, a common electrode 115 is formed on the common layer 114.

[0222] The common layer 114 can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, or coating. As mentioned above, the common layer 114 may have, for example, an electron injection layer or a hole injection layer.

[0223] For the formation of the common electrode 115, for example, sputtering or vacuum deposition can be used. Alternatively, a film formed by deposition and a film formed by sputtering may be laminated together.

[0224] Subsequently, a protective layer 131 is formed on the common electrode 115 (Figure 10C). Furthermore, by using a resin layer 122 to bond the substrate 120 onto the protective layer 131, the display device 100 shown in Figures 2A and 2C can be manufactured.

[0225] Methods for forming the protective layer 131 include vacuum deposition, sputtering, CVD, and ALD. The protective layer 131 may be a single layer or a multilayer structure.

[0226] [Example of a method for manufacturing a display device 2] In the above example of manufacturing method 1, an example was shown in which the EL film 180 is formed by a vapor deposition method, but the present invention is not limited to this. Figures 11A and 11B are cross-sectional views showing an example in which the EL film 180 is formed using a wet method, specifically an inkjet method.

[0227] Figure 11A shows how droplets 182a (to become EL film 180a), 182b (to become EL film 180b), and 182c (to become EL film 180c) are dropped by the inkjet method. Each nozzle of the inkjet device (nozzle 181a, nozzle 181b, and nozzle 181c) is positioned facing the layer 101 containing the transistor, and each droplet (droplet 182a, droplet 182b, and droplet 182c) is dropped from nozzle 181a, nozzle 181b, and nozzle 181c onto the layer 101 containing the transistor. It is preferable to drop droplets 182a, 182b, and 182c simultaneously for higher productivity, but a curing step may be included between the dropping of droplet 182a and droplet 182b, for example. This can prevent mixing of droplets dropped earlier and droplets dropped later.

[0228] Each droplet 182a, droplet 182b, and droplet 182c each contain one of the organic compounds used in the EL film 180. For example, when dropping a light-emitting substance used in the EL film 180, droplet 182a contains an organic compound related to a red light-emitting substance and a solvent, etc. Droplet 182b contains an organic compound related to a green light-emitting substance and a solvent, etc. Furthermore, droplet 182c contains an organic compound related to a blue light-emitting substance and a solvent, etc. Examples of organic compounds used in the EL film 180 include hole-injecting materials, hole-transporting materials, light-emitting substances, and electron-transporting materials. That is, each droplet 182a, droplet 182b, and droplet 182c can each contain one of the hole-injecting material, hole-transporting material, light-emitting substance, and electron-transporting material. Note that each droplet 182a, droplet 182b, and droplet 182c may also contain an electron-injecting material.

[0229] The nozzles 181a, 181b, and 181c are moved relative to the layer 101 containing the transistor to form EL films 180a, 180b, and 180c, as shown in Figure 11B. Here, the EL films 180 may be dried, for example, to evaporate the solvent contained in each droplet. Heat may be applied during the drying process.

[0230] Furthermore, the EL film 180 may be cured, for example, by a light irradiation process, at least on the surface. Ultraviolet light or infrared light can be used as the light.

[0231] [Examples of methods for driving display devices] Figure 12 is a flowchart illustrating an example of a method for driving the display device 100. Specifically, it shows an example of a method in which image data generated by the display device 100, or an electronic device having the display device 100, is corrected by the display device 100 or a processing unit in said electronic device, and the corrected image data is used to display an image on the display device 100.

[0232] First, the display device 100 or an electronic device having the display device 100 generates image data for the display device 400 shown in Figure 13 (step S1). The image data has a value representing the brightness of the light emitted by each sub-pixel 110. This value is also called the brightness value or grayscale value. The brightness value can be, for example, a digital value. For example, if one brightness value is represented by 8 bits of digital data, the brightness value can be any value from 0 to 255. For example, the higher the brightness value, the higher the brightness of the light emitted by the sub-pixel 110. In the following explanation, it will be assumed that the brightness of the light emitted by the sub-pixel 110 increases as the brightness value increases, but even if the relationship between the brightness values ​​is reversed, for example, the brightness of the light emitted by the sub-pixel 110 decreases as the brightness value increases, the following explanation can still be applied.

[0233] Figure 13 is a top view showing an example configuration of the display device 400. The display device 400 has rectangular pixels 403 arranged in a matrix. Sub-pixels 110a, 110b, and 110c are provided in the X direction of the pixels 403. In Figure 13, pixels 403[1,1], 403[1,2], 403[2,1], and 403[2,2] are shown. If the display device 100 has m rows and n columns of pixels 103 (where m and n are integers of 1 or more), then the display device 400 is assumed to be a display device having m rows and n columns of pixels 403.

[0234] We will compare the display device 100 shown in Figure 1 with the display device 400 shown in Figure 13. Specifically, we will compare the pixels 103[1,1] and 103[1,2] of the display device 100 with the pixels 403[1,1] and 403[1,2] of the display device 400.

[0235] In both display device 100 and display device 400, the subpixel in the first row and first column is subpixel 110a. On the other hand, the subpixel in the second row and second column is subpixel 110a in display device 100, but subpixel 110b in display device 400. Also, the subpixel in the third row and third column is subpixel 110b in display device 100, but subpixel 110c in display device 400. Furthermore, the subpixel in the fourth row and fourth column is subpixel 110b in display device 100, but subpixel 110a in display device 400. In addition, the subpixel in the fifth row and fifth column is subpixel 110c in display device 100, but subpixel 110b in display device 400. In both display device 100 and display device 400, the subpixel in the sixth row and sixth column is subpixel 110c.

[0236] As described above, there are coordinates where the subpixels exhibit different colors in display device 100 and display device 400. Therefore, it is necessary to change the coordinates of the luminance values ​​included in the image data intended for display device 400 to match those of display device 100.

[0237] For example, it is preferable that the brightness value of the 1st row, 2nd column in the display device 100 be the brightness value of the 1st row, 4th column in the display device 400. Similarly, it is preferable that the brightness values ​​of the 1st row, 3rd column, 1st row, 4th column, and 1st row, 5th column in the display device 100 be the brightness values ​​of the 1st row, 2nd column, 1st row, 5th column, and 1st row, 3rd column in the display device 400, respectively.

[0238] On the other hand, simply changing the coordinates of each brightness value can cause changes in the displayed image due to differences in pixel layout, which may give the user of the display device 100 a sense of unease. Therefore, it is preferable to correct the brightness values ​​of subpixels whose coordinates have changed significantly between the display device 100 and the display device 400. This allows the display device 100 to perform anti-aliasing, for example, to reduce the appearance of jagged edges. As a result, the display device 100 can display high-quality images.

[0239] The sub-pixel 110a[1,2] of the display device 100 can be said to have been moved to the 1st row, 4th column on the display device 400. In other words, the sub-pixel 110a[1,2] has been moved by two coordinate units in the X direction. The sub-pixel 110b[1,3] can be said to have been moved to the 1st row, 2nd column on the display device 400. In other words, the sub-pixel 110b[1,3] has been moved by one coordinate unit in the -X direction. The sub-pixel 110b[1,4] can be said to have been moved to the 1st row, 5th column on the display device 400. In other words, the sub-pixel 110b[1,4] has been moved by one coordinate unit in the X direction. Furthermore, the sub-pixel 110c[1,5] can be said to have been moved to the 1st row, 3rd column on the display device 400. In other words, the sub-pixel 110c[1,5] has been moved by two coordinate units in the -X direction.

[0240] In summary, sub-pixels 110a[1,1] and 110c[1,6] have no coordinate shift, sub-pixels 110b[1,3] and 110b[1,4] have shifted by one coordinate, and sub-pixels 110a[1,2] and 110c[1,5] have shifted by two coordinates. The same applies to sub-pixels 110 from the second row onward.

[0241] Next, the brightness of sub-pixels 110 whose coordinates have shifted by a certain amount or more by comparing the display device 400 and the display device 100 is corrected (step S2). Specifically, the brightness values ​​included in the image data are corrected in the display device 100 or the processing unit of the electronic device. For example, the brightness of sub-pixels 110 whose coordinates have shifted by two or more units by comparing the display device 400 and the display device 100 is corrected. Alternatively, the brightness of sub-pixels 110 whose coordinates have shifted by one or more units may be corrected.

[0242] Furthermore, the step (step S2) of correcting the brightness of the sub-pixel 110 whose coordinates have shifted by a certain amount or more can be referred to as the brightness control step. In other words, the driving method of a display device according to one aspect of the present invention has a function of controlling the brightness of sub-pixels, a function of controlling the color tone of sub-pixels, or a function of varying the brightness of sub-pixels.

[0243] In the following explanation, we will correct the brightness of sub-pixels 110 that can be said to have moved by two or more coordinates when comparing display device 400 and display device 100. That is, for example, the brightness value corresponding to the light emitted by sub-pixel 110a in the 1st row, 4th column of display device 400 is corrected to become the brightness value corresponding to the light emitted by sub-pixel 110a[1,2] in display device 100. Also, for example, the brightness value corresponding to the light emitted by sub-pixel 110c in the 1st row, 3rd column of display device 400 is corrected to become the brightness value corresponding to the light emitted by sub-pixel 110c[1,5] in display device 100.

[0244] For example, the luminance value corresponding to the light emitted by the sub-pixel 110a in the 1st row, 4th column of the display device 400 can be corrected based on that luminance value and the luminance value corresponding to the light emitted by the sub-pixel 110a in the 1st row, 1st column. In other words, based on these luminance values, the luminance value corresponding to the light emitted by the sub-pixel 110a[1,2] can be generated in the display device 100. Also, for example, the luminance value corresponding to the light emitted by the sub-pixel 110c in the 1st row, 3rd column of the display device 400 can be corrected based on that luminance value and the luminance value corresponding to the light emitted by the sub-pixel 110c in the 1st row, 6th column. In other words, based on these luminance values, the luminance value corresponding to the light emitted by the sub-pixel 110c[1,5] can be generated in the display device 100.

[0245] As described above, the brightness value of each sub-pixel 110 in the display device 100 can be determined based on both the brightness value of the sub-pixel 110 at the corresponding coordinate in the display device 400 and the brightness value of neighboring sub-pixels 110 that emit light of the same color.

[0246] For example, the luminance value corresponding to the light emitted by the subpixel 110a[1,2] in the display device 100 can be expressed by the following formula (1). Here, a1 and b1 represent coefficients (weights). Also, L 400[i,j] (i,j are integers greater than or equal to 1) represents the luminance value corresponding to the light emitted by the sub-pixel 110 in the i-th row and j-th column of the display device 400.

[0247]

number

[0248] For example, a1+b1 can be 1, and a1 can be a value greater than b1. Note that a1+b1 may be greater than or less than 1. Also, a1 may be a value less than b1. In the case shown in formula (1), the sub-pixel 110a in the 1st row and 4th column of the display device 400 corresponds to sub-pixel 110a[1,2] in the display device 100. Furthermore, the neighboring sub-pixel 110a of sub-pixel 110a[1,2] in the display device 100 is sub-pixel 110a[1,1], which corresponds to the sub-pixel 110a in the 1st row and 1st column of the display device 400.

[0249] Similarly, the luminance value corresponding to the light emitted by the subpixel 110c[1,5] in the display device 100 can be expressed by the following formula (2).

[0250]

number

[0251] For example, a2+b2 can be set to 1, and a2 can be a value smaller than b2. Note that a2+b2 can be greater than or less than 1. Also, a2 can be a value larger than b2. In the case shown in formula (2), the sub-pixel 110c in the 1st row and 3rd column of the display device 400 corresponds to sub-pixel 110c[1,5] in the display device 100. Furthermore, the neighboring sub-pixel 110c of sub-pixel 110c[1,5] in the display device 100 is sub-pixel 110c[1,6], which corresponds to the sub-pixel 110c in the 1st row and 6th column of the display device 400.

[0252] Based on the above, the weight of the brightness value of the sub-pixel 110, whose coordinates have shifted significantly when comparing the display device 400 and the display device 100, can be reduced, for example. Note that constants may be added to equations (1) and (2).

[0253] According to the method described above, image data can be corrected in accordance with the pixel layout of the display device according to one aspect of the present invention.

[0254] Thereafter, an image corresponding to the corrected image data is displayed on the display device 100 (step S3). Specifically, the subpixels 110 of the display device 100 emit light having a luminance corresponding to the luminance value included in the image data, whereby an image can be displayed on the display section of the display device 100. The above is an example of a driving method for the display device 100.

[0255] In the display device 100 shown in FIG. 1, the pixels 103 have a more complex shape than a quadrangle, and by driving the display device 100 according to the above driving method example, the display device 100 can display a high-quality image.

[0256] Note that when writing image data to the subpixels 110 of the display device 100 and displaying an image, for example, immediately after writing image data to the subpixels 110 in the first row, image data is written to the subpixels 110 in the second row, and image data is sequentially written up to the subpixels 110 in the final row (m-th row). The display device 100 may be driven by a progressive method. Alternatively, the display device 100 may be driven by an interlaced method in which image data is written by skipping rows of subpixels 110. In the interlaced method, for example, after writing image data to the subpixels 110 in the first row, image data is written to the subpixels 110 in the third row while skipping the subpixels 110 in the second row. In this way, image data is sequentially written up to the subpixels 110 in the (m-1)-th row. Next, after writing image data to the subpixels 110 in the second row, image data is written to the subpixels 110 in the fourth row. In this way, image data is sequentially written up to the subpixels 110 in the m-th row. That is, for example, after writing image data to all subpixels 110 in odd-numbered rows, image data is written to all subpixels 110 in even-numbered rows. Note that when driving the display device 100 by the interlaced method, the invention is not limited to the example in which image data is written to subpixels 110 by skipping one row as described above, and image data may be written to subpixels 110 by skipping two or more rows.

[0257] By driving the display device 100 in a progressive manner, the display device 100 can display images with less flicker. On the other hand, by driving the display device 100 in an interlaced manner, the frame frequency can be artificially increased, allowing for smoother display of moving images.

[0258] Furthermore, the driving of the progressive method and the interlaced method described above may be configured to be arbitrarily changed by the user of the display device 100. This configuration allows the display of images according to the user's preferences.

[0259] [Example of display device configuration 2] The pixel arrangement of the display device 100 shown in Figure 1 is a stripe arrangement, but the present invention is not limited to this. Figure 14A is a top view showing an example configuration of the display device 100, in which the pixel arrangement is a Bayer arrangement.

[0260] Figure 14A shows the subpixels 110 in the 1st row, 1st column through the 6th row, 6th column. These subpixels 110 constitute a 3x3 pixel 103. Note that Figure 14A shows a configuration in which pixel 103 has two subpixels 110b.

[0261] As shown in Figure 14A, for example, the subpixels 110 in the 2nd row, 2nd column, 2nd row, 3rd column, 3rd row, 2nd column, and 3rd row, 3rd column are subpixels 110c. Also, for example, the subpixels 110 in the 2nd row, 4th column, 2nd row, 5th column, 3rd row, 4th column, and 3rd row, 5th column are subpixels 110b. Furthermore, for example, the subpixels 110 in the 4th row, 4th column, 4th row, 5th column, 5th row, 4th column, and 5th row, 5th column are subpixels 110a. In other words, subpixels 110 emitting light of the same color are arranged adjacently in at least 2 rows and 2 columns. Note that subpixels 110 emitting light of the same color may be arranged adjacently in 3 rows or more, or in 3 columns or more.

[0262] Figure 14B is a cross-sectional view showing an example of the configuration between the dashed lines A3-A4 and C3-C4 in Figure 14A. The section between the dashed lines A3-A4 includes light-emitting element 130a and light-emitting element 130b, and the section between the dashed lines C3-C4 includes a connecting section 140. The connecting section 140 shown in Figure 14B has the same configuration as the connecting section 140 shown in Figure 2C.

[0263] [Example 3 of a method for manufacturing a display device] Figures 15A and 15B are cross-sectional views showing examples of methods for manufacturing the display device 100 shown in Figure 14B. Figure 15A shows a method for forming the EL film 180a, and Figure 15B shows a method for forming the EL film 180b. The EL film 180a can be formed by a vapor deposition method using FMM191a, similar to the method shown in Figure 7B. The EL film 180b can also be formed by a vapor deposition method using FMM191b, similar to the method shown in Figure 7C. Furthermore, although not shown, the EL film 180c can be formed by a vapor deposition method using FMM191c, similar to the method shown in Figure 7D.

[0264] Figure 15C shows a top view of the EL films 180a, 180b, and 180c after they have been formed. After the formation of EL films 180a, 180b, and 180c, EL layers 113a, 113b, and 113c can be formed by processing the EL films 180a, 180b, and 180c using photolithography, as shown in Figures 8B and 9B.

[0265] [Example of display device configuration 3] Figure 16 is a top view showing an example configuration of the display device 100, in which the pixel arrangement is an S-stripe arrangement.

[0266] Figure 16 shows pixels 103[1,1] to 103[3,3]. Sub-pixels 110 in the 1st, 4th, and 5th columns are designated as sub-pixels 110a and 110b, respectively, while sub-pixels 110 in the 2nd, 3rd, and 6th columns are designated as sub-pixels 110c.

[0267] As shown in Figure 16, for example, the subpixels 110 in the 2nd row, 4th column, 2nd row, 5th column, 3rd row, 4th column, and 3rd row, 5th column are subpixels 110b. Also, for example, the subpixels 110 in the 4th row, 4th column, 4th row, 5th column, 5th row, 4th column, and 5th row, 5th column are subpixels 110a. In other words, subpixels 110a and subpixels 110b are arranged adjacent to each other for at least 2 rows and 2 columns. Furthermore, as mentioned above, the subpixels 110c in the 2nd and 3rd columns are subpixels 110c, so subpixels 110c are arranged adjacent to each other for at least 2 columns. Note that subpixels 110a and subpixels 110b may each be arranged adjacent to each other for 3 rows or more. Also, subpixels 110a, subpixels 110b, and subpixels 110c may each be arranged adjacent to each other for 3 columns or more.

[0268] Figure 17A is a cross-sectional view showing an example configuration between the dashed lines A5 and A6 in Figure 16. Figure 17B is a cross-sectional view showing an example configuration between the dashed lines B3 and B4 in Figure 16. Figure 17C is a cross-sectional view showing an example configuration between the dashed lines B5 and B6 in Figure 16. Figure 17D is a cross-sectional view showing an example configuration between the dashed lines C5 and C6 in Figure 16. The section between the dashed lines A5 and A6 includes light-emitting elements 130a and 130c, the section between the dashed lines B3 and B4 includes light-emitting elements 130a and 130b, and the section between the dashed lines B5 and B6 includes light-emitting element 130c. Furthermore, the connection section 140 shown in Figure 17D has the same configuration as the connection section 140 shown in Figure 2C.

[0269] The EL film 180a, which will become the EL layer 113a, can be formed by a vapor deposition method using FMM191a, similar to the method shown in Figure 7B. The EL film 180b, which will become the EL layer 113b, can be formed by a vapor deposition method using FMM191b, similar to the method shown in Figure 7C. The EL film 180c, which will become the EL layer 113c, can be formed by a wet method, such as an inkjet method, similar to the methods shown in Figures 11A and 11B. Alternatively, the EL film 180c may be formed by a vapor deposition method using FMM191c, similar to the method shown in Figure 7D.

[0270] Figure 18 shows a top view of the EL films 180a, 180b, and 180c after they have been formed. After the formation of EL films 180a, 180b, and 180c, EL layers 113a, 113b, and 113c can be formed by processing the EL films 180a, 180b, and 180c using photolithography, as shown in Figures 8B and 9B.

[0271] [Example of display device configuration 4] Figure 19A shows a modified version of the display device 100 shown in Figure 14A, and illustrates a configuration in which pixel 103 has sub-pixels 110a, 110b, and 110c, as well as sub-pixel 110d. In Figure 19A, pixel 103 is shown having one of each of sub-pixels 110a, 110b, 110c, and 110d.

[0272] The sub-pixel 110d has a light-receiving element (also called a light-receiving device). Therefore, by providing the sub-pixel 110d in the display unit of the display device 100, the display device 100 can have one or both of the following functions in addition to the image display function: an imaging function and / or a sensing function. The display unit of such a display device 100 can be used as an image sensor or a touch sensor. In other words, by detecting light with the display unit, it is possible to capture an image or detect the proximity or contact of an object (finger, hand, or pen, etc.). Furthermore, in the display device 100 with the configuration shown in Figure 19A, the light-emitting element 130 can be used as a light source for the sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device 100, and the number of components in the electronic device having the display device 100 can be reduced. For example, it is not necessary to separately provide a fingerprint authentication device or a capacitive touch panel for scrolling, etc., in the electronic device. Therefore, by using the display device 100 with the configuration shown in Figure 19A, it is possible to provide an electronic device with reduced manufacturing costs compared to, for example, a case where a touch panel is provided separately from the display device 100.

[0273] In the display device 100 having the configuration shown in FIG. 19A, when an object reflects (or scatters) the light emitted by the light-emitting element 130, the light-receiving element can detect the reflected (or scattered) light, so imaging or touch detection can be performed even in a dark place.

[0274] When a light-receiving element is used in an image sensor, the display device 100 can capture an image using the light-receiving element. For example, the display device 100 having the configuration shown in FIG. 19A can be used as a scanner.

[0275] For example, an image sensor can be used to obtain data related to biometric information such as fingerprints or palm prints. That is, the display device 100 can incorporate a biometric authentication sensor. By incorporating the biometric authentication sensor in the display device 100, the number of components of an electronic device including the display device 100 can be reduced compared to a case where the biometric authentication sensor is provided separately from the display device 100, and the electronic device can be reduced in size and weight.

[0276] Furthermore, when a light-receiving element is used in a touch sensor, the display device 100 having the configuration shown in FIG. 19A can detect the proximity or contact of an object using the light-receiving element.

[0277] As shown in FIG. 19A, for example, the subpixels 110 in the 2nd row 2nd column, 2nd row 3rd column, 3rd row 2nd column, and 3rd row 3rd column are subpixels 110c. Further, for example, the subpixels 110 in the 2nd row 4th column, 2nd row 5th column, 3rd row 4th column, and 3rd row 5th column are subpixels 110d. Further, for example, the subpixels 110 in the 4th row 2nd column, 4th row 3rd column, 5th row 2nd column, and 5th row 3rd column are subpixels 110b. Furthermore, for example, the subpixels 110 in the 4th row 4th column, 4th row 5th column, 5th row 4th column, and 5th row 5th column are subpixels 110a. That is, the subpixel 110a, the subpixel 110b, the subpixel 110c, and the subpixel 110d are arranged adjacent to each other for at least 2 rows and 2 columns. Note that the subpixel 110a, the subpixel 110b, the subpixel 110c, and the subpixel 110d may each be arranged adjacent to each other for three or more rows, or may be arranged adjacent to each other for three or more columns.

[0278] Figure 19B is a cross-sectional view showing an example of the configuration between the dashed-dotted lines A7-A8 and C7-C8 in Figure 19A. The section between the dashed-dotted lines A7-A8 includes the light-emitting element 130c and the light-receiving element 150, while the section between the dashed-dotted lines C7-C8 includes the connecting section 140. The connecting section 140 shown in Figure 19B has the same configuration as the connecting section 140 shown in Figure 2C.

[0279] The photodetector 150 includes a pixel electrode 111 on a layer 101 containing a transistor, an island-shaped PD layer 155 on the pixel electrode 111, a common layer 114 on the PD layer 155, and a common electrode 115 on the common layer 114. The PD layer 155 has at least an active layer. The active layer is also called the photodetector layer. The PD layer 155 may also have one or more of the following: a hole transport layer, a hole blocking layer, an electron blocking layer, and an electron transport layer. For example, the PD layer 155 can be configured with a hole transport layer, an active layer, and an electron transport layer stacked in this order. In this case, the pixel electrode 111 can function as an anode, and the common electrode 115 can function as a cathode. Alternatively, the PD layer 155 can be configured with an electron transport layer, an active layer, and a hole transport layer stacked in this order. In this case, the pixel electrode 111 can function as a cathode, and the common electrode 115 can function as an anode.

[0280] Here, the common layer 114 may have different functions in the light-emitting element 130 and the light-receiving element 150. In this specification, components may be named based on their function in the light-emitting element. For example, a hole injection layer functions as a hole injection layer in the light-emitting element and as a hole transport layer in the light-receiving element. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting element and as an electron transport layer in the light-receiving element. Furthermore, layers common to both the light-receiving element and the light-emitting element may have the same function in both the light-emitting element and the light-receiving element. For example, a hole transport layer functions as a hole transport layer in both the light-emitting element and the light-receiving element, and an electron transport layer functions as an electron transport layer in both the light-emitting element and the light-receiving element.

[0281] The active layer of the PD layer 155 contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed by the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0282] As for the n-type semiconductor material of the active layer, fullerene (for example, C 60 , or C 70 Examples include electron-accepting organic semiconductor materials such as benzene, benzene, and fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have a deep LUMO level, they have extremely high electron-accepting properties. Normally, when π-electron conjugation (resonance) spreads out in a plane, as in benzene, electron-donating properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the large spread of π-electron conjugation. High electron-accepting properties allow for fast and efficient charge separation, making them useful as photodetectors. 60 , and C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-phenyl-C71-methyl butyrate (abbreviated as PC71BM), [6,6]-phenyl-C61-methyl butyrate (abbreviated as PC61BM), and 1',1'',4',4''-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0283] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI).

[0284] Furthermore, an example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviation: FT2TDMN).

[0285] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0286] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0287] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, and tetracene derivatives.

[0288] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0289] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0290] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0291] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0292] The hole transport layer, hole blocking layer, electron blocking layer, and electron transport layer that can be provided in the PD layer 155 may have the same materials as the hole transport layer, hole blocking layer, electron blocking layer, and electron transport layer that can be provided in the EL layer 113.

[0293] The PD layer 155 can be formed in the same manner as the EL layer 113. For example, the PD layer 155 can be formed by depositing a film that will become the PD layer 155 and then processing the film using photolithography. The film that will become the PD layer 155 can be deposited, for example, by a vapor deposition method using a metal mask. Alternatively, the film that will become the PD layer 155 can be deposited by a wet method such as an inkjet method.

[0294] [Display device configuration example 5] Figure 20 is a top view showing an example configuration of the display device 100. The display device 100 shown in Figure 20 has sub-pixels 110d capable of receiving light, and the pixel arrangement is an S-stripe arrangement. In Figure 20, pixels 103[1,1] to 103[4,4] are shown.

[0295] As shown in Figure 20, for example, the subpixels 110 in the 4th row, 2nd column to the 7th row, 3rd column are subpixels 110a. Also, the subpixels 110 in the 4th row, 4th column, 4th row, 5th column, and 5th row, 5th column are subpixels 110b. Furthermore, for example, the subpixels 110 in the 4th row, 6th column to the 7th row, 7th column are subpixels 110c. In addition, the subpixels 110 in the 6th row, 4th column, 6th row, 5th column, 7th row, 4th column, and 7th row, 5th column are subpixels 110d. In other words, subpixels 110a and 110c are arranged adjacently, for example, across 4 rows and 2 columns. Also, subpixels 110b and 110d are arranged adjacently, for example, across 2 rows and 2 columns. Furthermore, sub-pixels 110a and 110c may be arranged adjacent to each other for five rows or more, and sub-pixels 110b and 110d may be arranged adjacent to each other for two rows or more. In addition, sub-pixels 110a, 110b, 110c, and 110d may be arranged adjacent to each other for three columns or more.

[0296] Figure 21 is a top view showing an example configuration of the display device 100, and is a modified version of the display device 100 shown in Figure 20. The display device 100 shown in Figure 20 is provided with pixels 103 having three subpixels 110 and pixels 103 having four subpixels 110. On the other hand, in the display device 100 shown in Figure 21, all pixels 103 have three subpixels 110.

[0297] This embodiment can be combined with other embodiments as appropriate.

[0298] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention will be described with reference to the drawings.

[0299] A display device according to one aspect of the present invention can be a high-resolution display device. Therefore, the display device of this embodiment can be used, for example, as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, and as a display unit for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays and AR devices such as glasses.

[0300] Furthermore, a display device according to one aspect of the present invention can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices equipped with relatively large screens, such as television equipment, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and sound playback devices.

[0301] [Example of display module configuration 1] Figure 22A shows a perspective view of the display module 280. The display module 280 includes a display device 100 and an FPC 290.

[0302] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0303] Figure 22B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286, which is composed of multiple wires.

[0304] The pixel section 284 has a plurality of pixels 284a arranged periodically. Each pixel 284a has a light-emitting element as shown in Embodiment 1. Alternatively, each pixel 284a may have a light-receiving element as shown in Embodiment 1.

[0305] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0306] A single pixel circuit 283a is a circuit that controls the driving of multiple elements in a single pixel 284a. For example, a pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (driving transistor), and a capacitor for each light-emitting element. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source. This realizes an active-matrix display device.

[0307] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0308] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0309] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a are arranged in the display section 281 with a resolution of 20000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and a resolution of 20000 ppi or less, or 30000 ppi or less.

[0310] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as watches.

[0311] The display device 100 shown in Figure 23A includes a substrate 301, a light-emitting element 130, a capacitor 240, and a transistor 310.

[0312] Substrate 301 corresponds to substrate 291 in Figures 22A and 22B. The laminated structure from substrate 301 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1.

[0313] The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 comprises a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as a source or drain. The insulating layer 314 is provided covering the side surface of the conductive layer 311.

[0314] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0315] Furthermore, an insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0316] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 acts as one electrode of the capacitor 240, the conductive layer 245 acts as the other electrode of the capacitor 240, and the insulating layer 243 acts as the dielectric of the capacitor 240.

[0317] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0318] An insulating layer 255a is provided covering the capacitance 240, and an insulating layer 255b is provided on top of the insulating layer 255a.

[0319] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 255a and 255b, respectively. For insulating layer 255a, it is preferable to use an oxide insulating film or oxidative nitride insulating film such as a silicon oxide film, silicon oxidative nitride film, or aluminum oxide film. For insulating layer 255b, it is preferable to use a nitride insulating film or oxidative nitride insulating film such as a silicon nitride film or silicon nitride-oxide film. More specifically, it is preferable to use a silicon oxide film as insulating layer 255a and a silicon nitride film as insulating layer 255b. It is preferable that insulating layer 255b functions as an etching protective film. Alternatively, a nitride insulating film or nitride-oxide insulating film may be used as insulating layer 255a, and an oxide insulating film or oxidative nitride insulating film may be used as insulating layer 255b. In this embodiment, an example is shown in which a recess is provided in insulating layer 255b, but the insulating layer 255b does not necessarily have to have a recess.

[0320] A light-emitting element 130 is provided on the insulating layer 255b. The light-emitting element 130 can have the configuration shown in Figure 2A, for example. Details of the light-emitting element 130 can be found in Embodiment 1. An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting elements 130.

[0321] The pixel electrode 111 of the light-emitting element 130 is electrically connected to either the source or drain of the transistor 310 by a plug 256 embedded in the insulating layer 243, insulating layer 255a, and insulating layer 255b, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. For example, the pixel electrode 111 has a region that contacts the plug 256. For example, the lower surface of the pixel electrode 111 has a region that contacts the upper surface of the plug 256. The height of the upper surface of the insulating layer 255b and the height of the upper surface of the plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0322] Furthermore, a protective layer 131 is provided on the light-emitting element 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting element 130 to the substrate 120 can be found in Embodiment 1. The substrate 120 corresponds to the substrate 292 in Figure 22A.

[0323] Figures 23B1 and 23B2 are cross-sectional views showing examples of the configuration of the layers above the insulating layer 255a shown in Figure 23A, and are modified versions of the configuration shown in Figure 23A. In Figures 23B1 and 23B2, a microlens array 124 is provided between the protective layer 131 and the substrate 120.

[0324] The microlens array 124 can have, for example, a plano-convex shape. In the example shown in Figure 23B1, the microlens array 124 has an upward convex shape, and the microlens array 124 and the substrate 120 are bonded together by a resin layer 122. In the example shown in Figure 23B2, the microlens array 124 has a downward convex shape, and the microlens array 124 and the protective layer 131 are bonded together by a resin layer 122.

[0325] If the refractive index of the resin layer 122 is lower than that of the microlenses included in the microlens array 124, the microlenses may be able to focus the light emitted by the EL layer 113. Focusing the light emitted by the EL layer 113 allows a brighter image to be seen, especially when the user of the display device 100 views the display surface from directly in front of it. Therefore, for example, when the display device 100 is applied to an AR device or a VR device, it is preferable to provide the display device 100 with a microlens array 124, as shown in Figure 23B1 or Figure 23B2.

[0326] The display device 100 shown in Figure 24 has a configuration in which transistors 310A and 310B, each with a channel formed on a semiconductor substrate, are stacked. In the following description of the display device, parts that are the same as those described earlier may be omitted.

[0327] The display device 100 has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting element 130 are provided, and a substrate 301A on which a transistor 310A is provided are bonded together.

[0328] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on top of the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. As the insulating layers 345 and 346, inorganic insulating films that can be used for the protective layer 131 can be used.

[0329] A plug 343 is provided on the substrate 301B, penetrating both the substrate 301B and the insulating layer 345. It is preferable to provide an insulating layer 344 covering the sides of the plug 343. The insulating layer 344 functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. An inorganic insulating film, usable for the protective layer 131, can be used as the insulating layer 344.

[0330] Furthermore, a conductive layer 342 is provided on the back side of substrate 301B (the front side of substrate 301A), beneath the insulating layer 345. Preferably, the conductive layer 342 is provided so as to be embedded in the insulating layer 335. Also, preferably, the undersides of the conductive layer 342 and the insulating layer 335 are flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0331] On the other hand, the substrate 301A has a conductive layer 341 provided on an insulating layer 346. Preferably, the conductive layer 341 is provided so as to be embedded in the insulating layer 336. Furthermore, it is preferable that the upper surfaces of the conductive layer 341 and the insulating layer 336 are flattened.

[0332] The conductive layer 341 and the conductive layer 342 are bonded together, thereby electrically connecting the substrate 301A and the substrate 301B. By improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335, and the surface formed by the conductive layer 341 and the insulating layer 336, the bonding of the conductive layer 341 and the conductive layer 342 can be improved.

[0333] It is preferable to use the same conductive material for conductive layer 341 and conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layer 341 and conductive layer 342. This makes it possible to apply Cu-Cu (copper-copper) direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other).

[0334] The display device 100 shown in Figure 25 has a configuration in which conductive layer 341 and conductive layer 342 are joined via bumps 347.

[0335] As shown in Figure 25, the conductive layer 341 and the conductive layer 342 can be electrically connected by providing a bump 347 between them. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), or tin (Sn). Solder may also be used as the bump 347. An adhesive layer 348 may also be provided between the insulating layer 345 and the insulating layer 346. Furthermore, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may be omitted.

[0336] The display device 100 shown in Figure 26 has a different transistor configuration from the display device 100 shown in Figure 23A.

[0337] Transistor 320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) is applied to the semiconductor layer where the channel is formed.

[0338] Alternatively, a transistor using silicon as the channel formation region (Si transistor) may be used as transistor 320. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS: Low Temperature Poly Silicon) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0339] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0340] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (hereinafter also referred to as off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display devices.

[0341] Furthermore, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to, or 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0342] Furthermore, to increase the luminescence brightness of the light-emitting elements included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting elements. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting elements can be increased, thereby increasing the luminescence brightness of the light-emitting elements.

[0343] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby controlling the amount of current flowing to the light-emitting element. This allows for a wider range of tonal gradations in the pixel circuit.

[0344] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be supplied to the light-emitting element even if there are variations in the current-voltage characteristics of the light-emitting element. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting element.

[0345] By using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level distortion," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting elements."

[0346] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more selected from aluminum, gallium, yttrium, and tin.

[0347] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0348] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0349] For example, when describing an atomic ratio of In:Ga:Zn = 4:2:3 or a composition close to that, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing an atomic ratio of In:Ga:Zn = 5:1:6 or a composition close to that, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing an atomic ratio of In:Ga:Zn = 1:1:1 or a composition close to that, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0350] The transistors in circuit section 282 and the transistors in pixel circuit section 283 shown in Figure 22B may have the same structure or different structures. The structures of the multiple transistors in circuit section 282 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in pixel circuit section 283 may all be the same or there may be two or more different structures.

[0351] All transistors in the pixel circuit section 283 may be OS transistors, all transistors in the pixel circuit section 283 may be Si transistors, or some of the transistors in the pixel circuit section 283 may be OS transistors and the rest may be Si transistors.

[0352] For example, by using both LTPS transistors and OS transistors in the pixel circuit section 283, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. A more preferable example is to use OS transistors as transistors that function as switches to control conduction and non-conduction between wiring, and LTPS transistors as transistors that control current.

[0353] For example, one of the transistors in the pixel circuit section 283 functions as a transistor for controlling the current flowing to the light-emitting element and can be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting element. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting element in the pixel circuit.

[0354] On the other hand, the other transistor in the pixel circuit section 283 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the signal line. It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0355] Thus, a display device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0356] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0357] Substrate 331 corresponds to substrate 291 in Figures 22A and 22B. The laminated structure from substrate 331 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as substrate 331.

[0358] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0359] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0360] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide film having semiconductor properties. A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as source electrodes and drain electrodes.

[0361] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. An insulating film similar to that used for the insulating layer 332 can be used for the insulating layer 328.

[0362] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0363] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0364] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the transistor 320 from insulating layer 265, etc. As insulating layer 329, an insulating film similar to that used for insulating layers 328 and 332 can be used.

[0365] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, 264, and 328. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of each of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0366] The display device 100 shown in Figure 27 has a configuration in which transistors 320A and 320B, each having an oxide semiconductor in the semiconductor on which the channel is formed, are stacked.

[0367] The configuration of transistors 320A and 320B, and their surrounding components, can be based on the display device 100 shown in Figure 26.

[0368] In this example, we have used a configuration in which two transistors having oxide semiconductors are stacked, but this is not the only option. For example, a configuration in which three or more transistors are stacked may also be used.

[0369] The display device 100 shown in Figure 28 has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked.

[0370] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0371] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0372] This configuration allows for the formation of not only pixel circuits but also, for example, driving circuits directly beneath the light-emitting elements, making it possible to miniaturize the display device compared to cases where the driving circuits are located around the display area.

[0373] [Example of display module configuration 2] Figure 29 shows a perspective view of the display device 100, and Figure 30A shows a cross-sectional view of the display device 100.

[0374] The display device 100 has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 29, substrate 152 is clearly indicated by a dashed line.

[0375] The display device 100 includes a display unit 162, a connection unit 140, a circuit unit 164, and wiring 165, etc. Figure 29 shows an example in which IC 173 and FPC 172 are mounted on the display device 100. Therefore, the configuration shown in Figure 29 can also be described as a display module having the display device 100, an IC (integrated circuit), and an FPC.

[0376] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There may be one or more connection portions 140. Figure 29 shows an example in which the connection portion 140 is provided so as to surround all four sides of the display portion. At the connection portion 140, the common electrode of the light-emitting element and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0377] For example, a scan line drive circuit can be used as the circuit section 164.

[0378] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit unit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0379] Figure 29 shows an example in which IC 173 is provided on the substrate 151 using the COG (Chip On Glass) method or COF (Chip On Film) method, etc. IC 173 can be an IC having, for example, a scan line driving circuit or a signal line driving circuit. Note that the display device 100 and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC, for example, using the COF method.

[0380] Figure 30A shows an example of a cross-section of the display device 100 when a portion of the area including the FPC 172, a portion of the circuit section 164, a portion of the display section 162, a portion of the connection section 140, and a portion of the area including the end are cut.

[0381] The display device 100 shown in Figure 30A has transistors 201, 205, and light-emitting element 130, etc., between substrates 151 and 152.

[0382] The light-emitting element 130 can have the configuration shown in Figure 2A, for example, except that the pixel electrode configuration is different. For details of the light-emitting element 130, refer to Embodiment 1. An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting elements 130.

[0383] The light-emitting element 130 includes a conductive layer 112, a conductive layer 126 on the conductive layer 112, a conductive layer 129 on the conductive layer 126, and an EL layer 113 on the conductive layer 129. Here, all of the conductive layers 112, 126, and 129 can be called pixel electrodes, or only a part of them can be called pixel electrodes.

[0384] The conductive layer 112 is connected to the conductive layer 222b of the transistor 205 through openings provided in the insulating layers 214, 215, and 213. The edge of the conductive layer 126 is located outside the edge of the conductive layer 112. The edges of the conductive layer 126 and the conductive layer 129 are aligned or approximately aligned. For example, conductive layers that function as reflective electrodes can be used for conductive layers 112 and 126, and a conductive layer that functions as a transparent electrode can be used for conductive layer 129.

[0385] The conductive layer 112 has recesses formed to cover the openings provided in the insulating layer 214, insulating layer 215, and insulating layer 213. Layer 128 is embedded in these recesses.

[0386] Layer 128 has the function of flattening the recesses of the conductive layer 112. A conductive layer 126 is provided on the conductive layer 112 and layer 128, which is electrically connected to the conductive layer 112. Therefore, the region overlapping with the recesses of the conductive layer 112 can also be used as a light-emitting region, and the aperture ratio of the pixel can be increased.

[0387] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material.

[0388] As layer 128, an insulating layer having an organic material can be suitably used. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as layer 128. Alternatively, a photosensitive resin can be used as layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0389] By using a photosensitive resin, layer 128 can be fabricated using only exposure and development processes, thereby reducing the impact on the surface of the conductive layer 112 due to dry etching or wet etching. Furthermore, by forming layer 128 using a negative-type photosensitive resin, it may be possible to form layer 128 using the same photomask (exposure mask) used to form the openings of the insulating layer 214.

[0390] A protective layer 131 is provided on the light-emitting element 130. The protective layer 131 and the substrate 152 are bonded together via an adhesive layer 142. A solid encapsulation structure or a hollow encapsulation structure can be applied to encapsulate the light-emitting element 130. In Figure 30A, the space between the substrate 152 and the protective layer 131 is filled with the adhesive layer 142, indicating a solid encapsulation structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), indicating a hollow encapsulation structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting element 130. Furthermore, the space may be filled with a resin different from the adhesive layer 142, which is provided in a frame shape.

[0391] In the connection portion 140, a connecting electrode 123 is provided on the insulating layer 214. The connecting electrode 123 is shown as an example of a laminated structure consisting of a conductive layer obtained by processing the same conductive film as the conductive layer 112, a conductive layer obtained by processing the same conductive film as the conductive layer 126, and a conductive layer obtained by processing the same conductive film as the conductive layer 129. The end of the connecting electrode 123 is covered by the insulating layer 121. A common layer 114 is provided on the connecting electrode 123, and a common electrode 115 is provided on the common layer 114. The connecting electrode 123 and the common electrode 115 are electrically connected via the common layer 114. Note that the common layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the connecting electrode 123 and the common electrode 115 are in direct contact and electrically connected.

[0392] The display device 100 is a top-emission type. The light L emitted by the light-emitting element 130 is emitted towards the substrate 152. It is preferable to use a material with high transmittance to visible light for the substrate 152. The pixel electrodes contain a material that reflects visible light, and the counter electrodes (common electrodes 115) contain a material that transmits visible light.

[0393] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 1.

[0394] Both transistors 201 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0395] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0396] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0397] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, or aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0398] An organic insulating layer is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This makes it possible to suppress the formation of recesses in the insulating layer 214 during processing of the conductive layer 112, conductive layer 126, or conductive layer 129. Alternatively, recesses may be provided in the insulating layer 214 during processing of the conductive layer 112, conductive layer 126, or conductive layer 129.

[0399] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0400] The transistor structure of the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, or an inverse staggered transistor can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0401] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0402] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors having a crystalline region in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0403] The semiconductor layer of the transistor preferably has a metal oxide. In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0404] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0405] Figures 30B and 30C show other examples of transistor configurations.

[0406] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0407] In the transistor 209 shown in Figure 30B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0408] On the other hand, in the transistor 210 shown in Figure 30C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 30C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 30C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0409] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layer 112, a conductive film obtained by processing the same conductive film as conductive layer 126, and a conductive film obtained by processing the same conductive film as conductive layer 129. The conductive layer 166 is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0410] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting elements 130, at connection points 140, and at circuit points 164, etc. In addition, various optical components can be arranged on the outside of the substrate 152.

[0411] By providing a protective layer 131 that covers the light-emitting element 130, it is possible to suppress the ingress of impurities such as water into the light-emitting element 130 and improve the reliability of the light-emitting element 130.

[0412] Materials that can be used for substrate 120 can be applied to substrate 151 and substrate 152, respectively.

[0413] As the adhesive layer 142, a material that can be used for the resin layer 122 can be applied.

[0414] As the connecting layer 242, an anisotropic conductive film (ACF) or an anisotropic conductive paste (ACP) can be used.

[0415] The display device 100 shown in Figure 31A differs from the display device 100 shown in Figure 30A mainly in that it is a bottom-emission type display device.

[0416] Light emitted from the light-emitting element 130 is emitted towards the substrate 151. It is preferable to use a material with high transmittance to visible light for the substrate 151. On the other hand, the light transmittance of the material used for the substrate 152 is not a requirement.

[0417] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201, and between the substrate 151 and the transistor 205. Figure 31A shows an example in which a light-shielding layer 117 is provided on the substrate 151, an insulating layer 153 is provided on the light-shielding layer 117, and transistors 201 and 205 are provided on the insulating layer 153.

[0418] The conductive layers 112, 126, and 129 are each made of materials with high transmittance to visible light. It is preferable to use a material that reflects visible light for the common electrode 115.

[0419] In Figures 30A and 31A, the upper surface of layer 128 and the upper surface of the conductive layer 112 are roughly coincidental, but the present invention is not limited to this. Figures 31B1 to 31B4 are enlarged views of the region including layer 128 and its surroundings, and are modified examples of the configuration shown in Figures 30A and 31A.

[0420] Figure 31B1 shows an example where the upper surface of layer 128 is higher than the upper surface of the conductive layer 112. In the example shown in Figure 31B1, the upper surface of layer 128 has a shape that is convex towards the center and gently bulges outwards.

[0421] Figure 31B2 shows an example where the upper surface of layer 128 is lower than the upper surface of the conductive layer 112. In the example shown in Figure 31B2, the upper surface of layer 128 has a gently concave shape that slopes downwards toward the center.

[0422] Figure 31B3 shows an example where the upper surface of layer 128 is higher than the upper surface of the conductive layer 112, and the upper part of layer 128 extends beyond the recess formed in the conductive layer 112. In the example shown in Figure 31B3, a portion of layer 128 may be formed to cover a portion of the generally flat area of ​​the conductive layer 112.

[0423] Figure 31B4 shows an example in which a recess is further formed on a part of the upper surface of layer 128, in the same case as shown in Figure 31B3. This recess has a shape that is gently indented toward the center.

[0424] This embodiment can be combined with other embodiments as appropriate.

[0425] (Embodiment 3) This embodiment describes a light-emitting element that can be used in a display device according to one aspect of the present invention.

[0426] As shown in Figure 32A, the light-emitting element has an EL layer 786 between a pair of electrodes (lower electrode 772, upper electrode 788). The EL layer 786 can be composed of multiple layers, such as layer 4420, light-emitting layer 4411, and layer 4430. Layer 4420 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). Light-emitting layer 4411 may include, for example, a light-emitting compound. Layer 4430 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0427] A configuration having a layer 4420, an emissive layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 32A is referred to as a single structure.

[0428] Furthermore, Figure 32B shows a modified example of the EL layer 786 of the light-emitting element shown in Figure 32A. Specifically, the light-emitting element shown in Figure 32B has a layer 4431 on the lower electrode 772, a layer 4432 on the layer 4431, a light-emitting layer 4411 on the layer 4432, a layer 4421 on the light-emitting layer 4411, a layer 4422 on the layer 4421, and an upper electrode 788 on the layer 4422. For example, when the lower electrode 772 is the anode and the upper electrode 788 is the cathode, layer 4431 functions as a hole injection layer, layer 4432 functions as a hole transport layer, layer 4421 functions as an electron transport layer, and layer 4422 functions as an electron injection layer. Alternatively, when the lower electrode 772 is used as the cathode and the upper electrode 788 is used as the anode, layer 4431 functions as an electron injection layer, layer 4432 functions as an electron transport layer, layer 4421 functions as a hole transport layer, and layer 4422 functions as a hole injection layer. With such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination within the light-emitting layer 4411.

[0429] Furthermore, as shown in Figures 32C and 32D, a configuration in which multiple light-emitting layers (light-emitting layer 4411, light-emitting layer 4412, and light-emitting layer 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0430] Furthermore, as shown in Figures 32E and 32F, a configuration in which multiple light-emitting units (EL layer 786a, EL layer 786b) are connected in series via a charge generation layer 4440 is referred to as a tandem structure in this specification. The tandem structure may also be called a stacked structure. By using a tandem structure, a light-emitting element capable of high-brightness emission can be achieved.

[0431] In Figures 32C and 32D, the light-emitting layers 4411, 4412, and 4413 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. For example, light-emitting materials that emit blue light may be used for the light-emitting layers 4411, 4412, and 4413. A color conversion layer may be provided as layer 785 as shown in Figure 32D.

[0432] Furthermore, luminescent materials emitting light of different colors may be used for the luminescent layers 4411, 4412, and 4413, respectively. If the light emitted by the luminescent layers 4411, 4412, and 4413 are complementary colors, white light emission can be obtained. A color filter (also called a colored layer) may be provided as layer 785 as shown in Figure 32D. By passing white light through the color filter, light of a desired color can be obtained.

[0433] Furthermore, in Figures 32E and 32F, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. Alternatively, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 4411 and the light emitted by the light-emitting layer 4412 are complementary colors, white light emission is obtained. Figure 32F shows an example in which an additional layer 785 is provided. As layer 785, one or both of a color conversion layer and a color filter (coloring layer) can be used.

[0434] Furthermore, in Figures 32C, 32D, 32E, and 32F, as shown in Figure 32B, layer 4420 and layer 4430 may be a laminated structure consisting of two or more layers.

[0435] A structure in which each light-emitting element produces a different emission color (for example, blue (B), green (G), and red (R)) is sometimes called an SBS (Side By Side) structure.

[0436] The light-emitting color of the light-emitting element can be red, green, blue, cyan, magenta, yellow, or white, depending on the material constituting the EL layer 786. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting element.

[0437] A light-emitting element that emits white light preferably has a configuration that includes two or more types of light-emitting materials in its light-emitting layer. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more materials is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary in color, a light-emitting element that emits white light as a whole can be obtained. The same applies to light-emitting elements that have three or more light-emitting layers.

[0438] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), or O (orange).

[0439] This embodiment can be combined with other embodiments as appropriate.

[0440] (Embodiment 4) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to the drawings.

[0441] A display device according to one aspect of the present invention can be substantially a high-resolution display device and is therefore suitable for use in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0442] Furthermore, a display device according to one aspect of the present invention can display high-resolution images. Therefore, a display device according to one aspect of the present invention can be suitably used in electronic devices equipped with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines. In addition, a display device according to one aspect of the present invention can be used in electronic devices such as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, or sound playback devices.

[0443] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0444] The electronic device of this embodiment may have sensors (including those with functions to measure force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0445] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0446] Figures 33A to 33D and 34A to 34F illustrate an example of a wearable device that can be worn on the head. These wearable devices have the function of displaying AR content, or the function of displaying VR content, or both. In addition to AR and VR, these wearable devices may also have the function of displaying SR or MR content. By having electronic devices that can display AR, VR, SR, or MR content, it is possible to enhance the user's sense of immersion.

[0447] The electronic device 700A shown in Figure 33A and the electronic device 700B shown in Figure 33B each include a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0448] A display device according to one aspect of the present invention can be applied to the display panel 751. Therefore, an electronic device capable of displaying images with extremely high resolution can be created.

[0449] Electronic devices 700A and 700B can project an image displayed on the display panel 751 onto the display area 756 of the optical element 753. Because the optical element 753 is translucent, the user can see the image displayed on the display area superimposed on the transmitted image visible through the optical element 753. Therefore, electronic devices 700A and 700B are electronic devices capable of AR display.

[0450] Electronic devices 700A and 700B may be equipped with cameras capable of capturing images of the area in front of them as imaging units. Furthermore, electronic devices 700A and 700B may each be equipped with acceleration sensors such as gyro sensors to detect the orientation of the user's head and display an image corresponding to that orientation in the display area 756.

[0451] The communications unit has a wireless communication device, which can supply, for example, a video signal. Alternatively, instead of the wireless communication device, or in addition to the wireless communication device, it may be equipped with a connector to which a cable supplying video signals and power potential can be connected.

[0452] Furthermore, electronic devices 700A and 700B are equipped with batteries that can be charged wirelessly, wired, or both.

[0453] The housing 721 may be equipped with a touch sensor module. The touch sensor module has the function of detecting when the outer surface of the housing 721 is touched. The touch sensor module can detect the user's tap or slide operations and perform various processes. For example, a tap operation can be used to pause or resume the video, and a slide operation can be used to fast forward or rewind. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0454] Various types of touch sensors can be applied to the touch sensor module. For example, various methods such as capacitive, resistive, infrared, electromagnetic induction, surface acoustic wave, or optical sensors can be used. In particular, it is preferable to apply a capacitive or optical sensor to the touch sensor module.

[0455] The electronic device 800A shown in Figure 33C and the electronic device 800B shown in Figure 33D each include a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0456] A display device according to one embodiment of the present invention can be applied to the display unit 820. Therefore, it is possible to create an electronic device that can display with extremely high resolution. This allows the user to experience a high level of immersion.

[0457] The display unit 820 is located inside the housing 821, in a position where it can be seen through the lens 832. Furthermore, by displaying different images on a pair of display units 820, a three-dimensional display using parallax can also be performed.

[0458] Electronic devices 800A and 800B can be described as electronic devices for VR. A user wearing electronic device 800A or electronic device 800B can view the image displayed on the display unit 820 through the lens 832.

[0459] It is preferable that electronic devices 800A and 800B each have a mechanism that allows adjustment of the left and right positions of the lens 832 and the display unit 820 so that they are in the optimal position according to the user's eye position. It is also preferable that they have a mechanism that adjusts the focus by changing the distance between the lens 832 and the display unit 820.

[0460] The attachment portion 823 allows the user to attach the electronic device 800A or 800B to their head. Note that, for example, in Figure 33C, it is illustrated as having a shape similar to the temple (joint, or other part of eyeglasses), but it is not limited to this. The attachment portion 823 only needs to be wearable by the user; for example, it may be in the shape of a helmet or a band.

[0461] The imaging unit 825 has the function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, multiple cameras may be provided to accommodate multiple angles of view, such as telephoto and wide-angle.

[0462] Although an example with an imaging unit 825 is shown here, any distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object can be provided. In other words, the imaging unit 825 is one form of a detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using the image obtained by the camera and the image obtained by the distance image sensor, more information can be acquired, enabling more accurate gesture control.

[0463] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, housing 821, and mounting unit 823. This eliminates the need for separate audio equipment such as headphones, earphones, or speakers, allowing users to enjoy video and audio simply by wearing the electronic device 800A.

[0464] Electronic devices 800A and 800B may each have input terminals. Cables can be connected to the input terminals to supply video signals from video output devices, etc., and power for charging batteries provided within the electronic devices.

[0465] An electronic device according to one aspect of the present invention may have a function for wireless communication with an earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., voice data) from the electronic device through its wireless communication function. For example, the electronic device 700A shown in Figure 33A has a function for transmitting information to the earphone 750 through its wireless communication function. Also, for example, the electronic device 800A shown in Figure 33C has a function for transmitting information to the earphone 750 through its wireless communication function.

[0466] Furthermore, the electronic device may have an earphone section. The electronic device 700B shown in Figure 33B has an earphone section 727. For example, the earphone section 727 and the control unit can be connected to each other by a wire. Part of the wiring connecting the earphone section 727 and the control unit may be located inside the housing 721 or the mounting section 723.

[0467] Similarly, the electronic device 800B shown in Figure 33D has an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be connected to each other by a wire. Part of the wiring connecting the earphone unit 827 and the control unit 824 may be located inside the housing 821 or the mounting unit 823. Also, the earphone unit 827 and the mounting unit 823 may have magnets. This allows the earphone unit 827 to be fixed to the mounting unit 823 by magnetic force, which is preferable as it makes storage easier.

[0468] Furthermore, the electronic device may have an audio output terminal to which earphones or headphones can be connected. The electronic device may also have an audio input terminal and / or an audio input mechanism. For example, a microphone or other sound-collecting device can be used as the audio input mechanism. By having an audio input mechanism, the electronic device may be given the function of a so-called headset.

[0469] Thus, as one embodiment of the present invention, both eyeglass-type (electronic devices 700A and 700B, etc.) and goggle-type (electronic devices 800A and 800B, etc.) are preferred as electronic devices.

[0470] Furthermore, an electronic device according to one aspect of the present invention can transmit information to earphones via wired or wireless means.

[0471] Figures 34A and 34B show the external appearance of the electronic device 8300, which is a head-mounted display.

[0472] The electronic device 8300 includes a housing 8301, a display unit 8302, operation buttons 8303, and a band-shaped fastener 8304.

[0473] The operation button 8303 may, for example, function as a power button. The electronic device 8300 may also have other buttons besides the operation button 8303.

[0474] Furthermore, as shown in Figure 34C, a lens 8305 may be provided between the display unit 8302 and the user's eye position. The lens 8305 allows the user to view the display unit 8302 in a magnified manner, thereby enhancing the sense of realism. In this case, as shown in Figure 34C, a dial 8306 may be provided to change the position of the lens for diopter adjustment.

[0475] A display device according to one embodiment of the present invention can be applied to the display unit 8302. This makes the electronic device 8300 capable of displaying an image with extremely high resolution. Therefore, even when magnified using the lens 8305 as shown in Figure 34C, the user cannot see the pixels, and a more realistic image can be displayed.

[0476] Figures 34A to 34C show an example where there is one display unit 8302. This configuration allows for a reduction in the number of parts.

[0477] The display unit 8302 can display two images side-by-side in its left and right regions, one for the right eye and the other for the left eye. This allows for the display of stereoscopic images using binocular parallax.

[0478] Alternatively, a single image visible to both eyes may be displayed across the entire area of ​​the display unit 8302. This makes it possible to display a panoramic image across both ends of the field of view, thereby enhancing the sense of realism.

[0479] Here, it is preferable that the electronic device 8300 has a mechanism to change the curvature of the display unit 8302 to an appropriate value according to the size of the user's head or the position of their eyes. For example, the user may adjust the curvature of the display unit 8302 themselves by operating a dial 8307 for adjusting the curvature of the display unit 8302. Alternatively, the housing 8301 may be provided with a sensor (e.g., a camera, a contact sensor, a non-contact sensor, etc.) that detects the size of the user's head or the position of their eyes, and the device may have a mechanism to adjust the curvature of the display unit 8302 based on the sensor's detection data.

[0480] Furthermore, when using lens 8305, it is preferable to provide a mechanism that adjusts the position and angle of lens 8305 in synchronization with the curvature of display unit 8302. Alternatively, dial 8306 may have a function to adjust the angle of the lens.

[0481] Figures 34E and 34F show an example in which a drive unit 8308 controls the curvature of the display unit 8302. The drive unit 8308 is fixed to at least a portion of the display unit 8302. The drive unit 8308 has the function of deforming the display unit 8302 by deforming or moving the portion to which it is fixed.

[0482] Figure 34E is a schematic diagram showing a user 8310 with a relatively large head size wearing the housing 8301. In this case, the shape of the display unit 8302 is adjusted by the drive unit 8308 so that the curvature is relatively small (the radius of curvature is large).

[0483] On the other hand, Figure 34F shows the case where user 8311, who has a smaller head size compared to user 8310, is wearing the housing 8301. Also, user 8311 has a narrower distance between their eyes compared to user 8310. In this case, the shape of the display unit 8302 is adjusted by the drive unit 8308 so that the curvature of the display unit 8302 is large (the radius of curvature is small). In Figure 34F, the position and shape of the display unit 8302 in Figure 34E are shown by dashed lines.

[0484] Thus, by having a mechanism to adjust the curvature of the display unit 8302, the electronic device 8300 can provide an optimal display for a wide range of users, regardless of age or gender.

[0485] Furthermore, by changing the curvature of the display unit 8302 according to the content displayed on it, a high level of realism can be provided to the user. For example, vibration can be simulated by vibrating the curvature of the display unit 8302. In this way, various effects can be applied to match the scenes in the content, providing the user with a new experience. Moreover, by linking this with the vibration module installed in the housing 8301, an even more immersive display becomes possible.

[0486] The electronic device 8300 may also have two display units 8302, as shown in Figure 34D.

[0487] Having two display units 8302 allows the user to view one display unit per eye. This enables the display of high-resolution images, even when performing 3D display using parallax. Furthermore, the display units 8302 are curved in an arc shape with the user's eye as the approximate center. This ensures that the distance from the user's eye to the display surface of the display unit remains constant, allowing the user to see a more natural image. In addition, even if the brightness and chromaticity of the light from the display unit change depending on the viewing angle, the user's eye is positioned in the direction of the normal to the display surface of the display unit, so this effect can be practically ignored, resulting in a more realistic image.

[0488] The electronic device 6500 shown in Figure 35A is a portable information terminal that can be used as a smartphone.

[0489] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0490] A display device according to one embodiment of the present invention can be applied to the display unit 6502.

[0491] Figure 35B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0492] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, and battery 6518 are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0493] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0494] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0495] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0496] Figure 35C shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0497] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0498] The television device 7100 shown in Figure 35C can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0499] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0500] Figure 35D shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0501] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0502] Figures 35E and 35F show examples of digital signage.

[0503] The digital signage 7300 shown in Figure 35E includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may have LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0504] Figure 35F shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0505] In Figures 35E and 35F, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0506] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0507] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0508] Furthermore, as shown in Figures 35E and 35F, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0509] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0510] The electronic equipment shown in Figures 36A to 36G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0511] The electronic devices shown in Figures 36A to 36G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0512] Details of the electronic equipment shown in Figures 36A to 36G will be explained below.

[0513] Figure 36A is a perspective view showing a personal digital information terminal (PDI) 9101. The PDI 9101 can be used, for example, as a smartphone. The PDI 9101 may also be equipped with a speaker 9003, a connection terminal 9006, or a sensor 9007. Furthermore, the PDI 9101 can display text and image information on multiple surfaces. Figure 36A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of the email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050, etc., may be displayed in the position where the information 9051 is displayed.

[0514] Figure 36B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0515] Figure 36C is a perspective view showing the tablet terminal 9103. The tablet terminal 9103 can run various applications, such as mobile phone calls, email, document viewing and creation, music playback, internet communication, and computer games. The tablet terminal 9103 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front of the housing 9000. The left side of the housing 9000 has operation keys 9005 as buttons for operation, and the bottom has connection terminals 9006.

[0516] Figure 36D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0517] Figures 36E to 36G are perspective views showing a foldable personal information terminal 9201. Figure 36E shows the personal information terminal 9201 in an unfolded state, Figure 36G shows it in a folded state, and Figure 36F shows a perspective view of the transition from one of Figures 36E or 36G to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0518] The personal computer 2800 shown in Figure 37A includes a housing 2801, a housing 2802, a display unit 2803, a keyboard 2804, and a pointing device 2805, etc. A secondary battery 2807 is provided inside housing 2801, and a secondary battery 2806 is provided inside housing 2802. The display unit 2803 is a display device according to one embodiment of the present invention and has a touch panel function. As shown in Figure 37B, the personal computer 2800 can be used as a tablet terminal by removing housings 2801 and 2802, and using only housing 2802.

[0519] In the modified personal computer shown in Figure 37C, a flexible display is applied to the display unit 2803. The secondary battery 2806 can be made bendable by using a flexible film for its casing. As a result, as shown in Figure 37C, the housing 2802, the display unit 2803, and the secondary battery 2806 can be folded for use. In this case, as shown in Figure 37C, a part of the display unit 2803 can also be used as a keyboard.

[0520] Furthermore, the housing 2802 can be folded so that the display unit 2803 faces inward, as shown in Figure 37D, or so that the display unit 2803 faces outward, as shown in Figure 37E.

[0521] Figure 37F is a perspective view showing the steering wheel of a vehicle. The steering wheel 41 has a rim 42, a hub 43, spokes 44, and a shaft 45, etc. A display unit 20 is provided on the surface of the hub 43. Of the three spokes 44, the lower spoke 44 is provided with a light-receiving unit 20a, the left spoke 44 is provided with multiple light-receiving units 20b, and the right spoke 44 is provided with multiple light-receiving units 20c. By holding the fingers of the hand 35 over the light-receiving unit 20a, the driver's fingerprint information can be obtained and authentication can be performed using this information. In addition, by touching the light-receiving units 20b and 20c, etc., the vehicle's navigation system, audio system, and communication system can be operated. Various operations are also possible, such as adjusting the rearview mirror, adjusting the side mirrors, turning the interior lights on and off and adjusting their brightness, and opening and closing the windows.

[0522] This embodiment can be combined with other embodiments as appropriate. [Examples]

[0523] In this embodiment, the display device shown in Embodiment 1 is reproduced in a simulation, and the results of displaying an image are described.

[0524] Figures 38A and 38B are top views showing the configuration of the display device reproduced in this embodiment. The display device shown in Figure 38A corresponds to the display device 100 shown in Figure 1 of Embodiment 1. In Figure 38A, the sub-pixels 110 in the i-th row j-th column to the i+1-th row j+5th column (where i is an integer of 1 or more, and j is 1 or a multiple of 6 + 1) are shown. In the display device shown in Figure 38B, the 2 rows and 2 columns of sub-pixels 110 of the same color in Figure 38A are treated as a single sub-pixel 110. The display device shown in Figure 38A is assumed to be a display device in which the EL film has been divided by photolithography or the like, while the display device shown in Figure 38B is assumed to be a display device in which such division has not been performed.

[0525] In Figures 38A and 38B, sub-pixel 110R represents a sub-pixel 110 that emits red light, sub-pixel 110G represents a sub-pixel 110 that emits green light, and sub-pixel 110B represents a sub-pixel 110 that emits blue light. The same applies to subsequent drawings.

[0526] Figure 39A1 is an image displayed in a simulation, reproducing the display device shown in Figure 38A. Figure 39A2 is a magnified view of the area enclosed by the white rectangle in Figure 39A1. Figure 39B1 is an image displayed in a simulation, reproducing the display device shown in Figure 38B. Figure 39B2 is a magnified view of the area enclosed by the white rectangle in Figure 39B1.

[0527] As shown in Figures 39A2 and 39B2, it was confirmed that the display device shown in Figure 38A can display images that appear to have higher resolution than the display device shown in Figure 38B, in simulations.

[0528] Furthermore, in this embodiment, the image display result when the display device shown in Figure 38A is driven in the manner shown in Figure 12 of Embodiment 1 was verified by simulation. First, a display device with the configuration shown in Figure 40 was assumed as the display device 400 (step S1). In Figure 40, the sub-pixel that emits red light is denoted as R, the sub-pixel that emits green light is denoted as G, and the sub-pixel that emits blue light is denoted as B.

[0529] Here, the luminance values ​​of subpixel 110R[i,j], subpixel 110G[i,j+2], subpixel 110G[i,j+3], and subpixel 110B[i,j+5] shown in Figure 38A are the same as those shown in Figure 40. i,j Brightness value, G i,j+1 Brightness value, G i,j+4 The brightness value and B i,j+5 The brightness values ​​were set to be the same as those for subpixel 110R[i+1,j], subpixel 110G[i+1,j+2], subpixel 110G[i+1,j+3], and subpixel 110B[i+1,j+5], respectively, as shown in Figure 40. i+1,j Brightness value, G i+1,j+1 Brightness value, G i+1,j+4 The brightness value and B i+1,j+5 The brightness value was set to be the same as that of the previous value.

[0530] Furthermore, the luminance value of sub-pixel 110R[i,j+1] shown in Figure 38A was calculated using the following formula (3), and the luminance value of sub-pixel 110B[i,j+4] was calculated using the following formula (4) (step S2). Here, L(R i,j ), L(R i,j+3 ), L(B i,j+2 ), and L(B i,j+5 ) are shown in Figure 40, R i,j Brightness value, R i,j+3 Brightness value, B i,j+2 The brightness value and B i,j+5 This shows the brightness value.

[0531]

number

[0532]

number

[0533] The brightness value of sub-pixel 110R[i+1,j+1] was calculated by replacing i with i+1 in formula (3) above. The brightness value of sub-pixel 110B[i+1,j+4] was calculated by replacing i with i+1 in formula (4) above.

[0534] Based on the brightness values ​​shown above, the image was displayed in the simulation (step S3).

[0535] Figure 41A1 is an image displayed by simulating the operation of the display device shown in Figure 38A using the method shown in Figure 12. Figure 41A2 is a magnified view of the area enclosed by the white rectangle in Figure 41A1. Figure 41B1 is an image displayed by simulating the display device shown in Figure 38A without performing brightness value correction using the method shown in Figure 12, and is the same image as Figure 39B1. Figure 41B2 is a magnified view of the area enclosed by the white rectangle in Figure 41B1, and is the same image as Figure 39B2.

[0536] As shown in Figures 41A2 and 41B2, it was confirmed that by correcting the brightness value using the method shown in Figure 12, it is possible to display images with smoother edges, for example. [Examples]

[0537] In this embodiment, the display device shown in Embodiment 1 is reproduced in a simulation, and the results of displaying an image are described.

[0538] Figures 42A and 42B are top views showing the configuration of the display device reproduced in this embodiment. The display device shown in Figure 42A corresponds to the display device 100 shown in Figure 14A of Embodiment 1. In the display device shown in Figure 42B, the two rows and two columns of sub-pixels 110 of the same color in Figure 42A are treated as a single sub-pixel 110. The display device shown in Figure 42A is assumed to be a display device in which the EL film has been divided by a method such as photolithography, while the display device shown in Figure 42B is assumed to be a display device in which such division has not been performed.

[0539] Figure 43A1 is an image displayed in a simulation, reproducing the display device shown in Figure 42A. Figure 43A2 is a magnified view of the area enclosed by the white rectangle in Figure 43A1. Figure 43B1 is an image displayed in a simulation, reproducing the display device shown in Figure 42B. Figure 43B2 is a magnified view of the area enclosed by the white rectangle in Figure 43B1.

[0540] As shown in Figures 43A2 and 43B2, it was confirmed that the display device shown in Figure 42A can display images that appear to have higher resolution than the display device shown in Figure 42B, in the simulation. [Examples]

[0541] In this embodiment, the display device shown in Embodiment 1 is reproduced in a simulation, and the results of displaying an image are described.

[0542] Figures 44A and 44B are top views showing the configuration of the display device reproduced in this embodiment. The display device shown in Figure 44A corresponds to the display device 100 shown in Figure 16 of Embodiment 1. In the display device shown in Figure 44B, the two rows and two columns of sub-pixels 110 of the same color in Figure 44A are treated as a single sub-pixel 110. The display device shown in Figure 44A is assumed to be a display device in which the EL film has been divided by a method such as photolithography, while the display device shown in Figure 44B is assumed to be a display device in which such division has not been performed.

[0543] Figure 45A1 is an image displayed in a simulation, reproducing the display device shown in Figure 44A. Figure 45A2 is a magnified view of the area enclosed by the white rectangle in Figure 45A1. Figure 45B1 is an image displayed in a simulation, reproducing the display device shown in Figure 44B. Figure 45B2 is a magnified view of the area enclosed by the white rectangle in Figure 45B1.

[0544] As shown in Figures 45A2 and 45B2, it was confirmed that the display device shown in Figure 44A can display images that appear to have higher resolution in simulations than the display device shown in Figure 44B. [Examples]

[0545] In this embodiment, the display device shown in Embodiment 1 is reproduced in a simulation, and the results of displaying an image are described.

[0546] Figures 46A and 46B are top views showing the configuration of the display device reproduced in this embodiment. The display device shown in Figure 46A corresponds to the display device 100 shown in Figure 20 of Embodiment 1. In the display device shown in Figure 46B, the sub-pixels 110a in 4 rows and 2 columns in Figure 46A are treated as one sub-pixel 110a, and the sub-pixels 110c in 4 rows and 2 columns in Figure 46A are treated as one sub-pixel 110c. Furthermore, in the display device shown in Figure 46B, the sub-pixels 110b in 2 rows and 2 columns in Figure 46A are treated as one sub-pixel 110b, and the sub-pixels 110d in 2 rows and 2 columns in Figure 46A are treated as one sub-pixel 110d. The display device shown in Figure 46A is assumed to be a display device in which the EL film has been divided by photolithography or the like, while the display device shown in Figure 46B is assumed to be a display device in which such division has not been performed.

[0547] Figure 47A1 is an image displayed in a simulation, reproducing the display device shown in Figure 46A. Figure 47A2 is a magnified view of the area enclosed by the white rectangle in Figure 47A1. Figure 47B1 is an image displayed in a simulation, reproducing the display device shown in Figure 46B. Figure 47B2 is a magnified view of the area enclosed by the white rectangle in Figure 47B1.

[0548] As shown in Figures 47A2 and 47B2, it was confirmed that the display device shown in Figure 46A can display images that appear to have higher resolution in simulations than the display device shown in Figure 46B. [Examples]

[0549] In this embodiment, the display device shown in Embodiment 1 is reproduced in a simulation, and the results of displaying an image are described.

[0550] Figures 48A and 48B are top views showing the configuration of the display device reproduced in this embodiment. The display device shown in Figure 48A corresponds to the display device 100 shown in Figure 21 of Embodiment 1. In the display device shown in Figure 48B, the 2x2 subpixels 110a in Figure 48A are treated as one subpixel 110a, and the 2x2 subpixels 110c in Figure 48A are treated as one subpixel 110c. Furthermore, in the display device shown in Figure 48B, the 2x2 subpixels 110b in Figure 48A are treated as one subpixel 110b, and the 2x2 subpixels 110d in Figure 48A are treated as one subpixel 110d. The display device shown in Figure 48A is assumed to be a display device in which the EL film has been divided by photolithography or the like, while the display device shown in Figure 48B is assumed to be a display device in which such division has not been performed.

[0551] Figure 49A1 is an image displayed in a simulation, reproducing the display device shown in Figure 48A. Figure 49A2 is a magnified view of the area enclosed by the white rectangle in Figure 49A1. Figure 49B1 is an image displayed in a simulation, reproducing the display device shown in Figure 48B. Figure 49B2 is a magnified view of the area enclosed by the white rectangle in Figure 49B1.

[0552] As shown in Figures 49A2 and 49B2, it was confirmed that the display device shown in Figure 48A can display images that appear to have higher resolution than the display device shown in Figure 48B, in the simulation. [Explanation of Symbols]

[0553] 20a: Light-receiving unit, 20b: Light-receiving unit, 20c: Light-receiving unit, 20: Display unit, 35: Hand, 41: Handle, 42: Rim, 43: Hub, 44: Spoke, 45: Shaft, 100: Display device, 101: Layer, 103[1,1]: Pixel, 103[1,2]: Pixel, 103[2,1]: Pixel, 103[2,2]: Pixel, 103[3,3]: Pixel, 103[4,4]: Pixel, 103: Pixel, 110a: Sub-pixel, 110a[1,1]: Sub-pixel, 110a[1,2]: Sub-pixel, 110a[2,1]: Sub-pixel, 110a[2,2]: Sub-pixel, 110B: Sub-pixel, 110b: Sub Pixel, 110b[1,3]: sub-pixel, 110b[1,4]: sub-pixel, 110b[2,3]: sub-pixel, 110b[2,4]: sub-pixel, 110B[i+1,j+4]: sub-pixel, 110B[i+1,j+5]: sub-pixel, 110B[i,j+4]: sub-pixel, 110B[i,j+5]: sub-pixel, 110c: sub-pixel, 110c[1,5]: sub-pixel, 110c[1,6]: sub-pixel, 110c[2,5]: sub-pixel, 110c[2,6]: sub-pixel, 110d: sub-pixel, 110G: sub-pixel, 110G[i+1,j+2]: sub-pixel, 110G[i+1,j+3]: sub-pixel, 110G [i,j+2]: sub-pixel, 110G[i,j+3]: sub-pixel, 110R: sub-pixel, 110R[i+1,j+1]: sub-pixel, 110R[i+1,j]: sub-pixel, 110R[i,j+1]: sub-pixel, 110R[i,j]: sub-pixel, 110: sub-pixel, 111: pixel electrode, 112: conductive layer, 113a: EL layer, 113b: EL layer, 113c: EL layer, 113: EL layer, 114: common layer, 115: common electrode, 116: tapered section, 117: light-shielding layer, 118A: sacrificial film, 118: sacrificial layer, 119A: sacrificial film, 119: sacrificial layer, 120: substrate, 121: insulating layer, 122: Resin layer, 123: connecting electrode, 124: microlens array, 125A: insulating film, 125: insulating layer, 126: conductive layer, 127A: insulating film, 127: insulating layer, 128: layer, 129: conductive layer, 130a: light-emitting element, 130b: light-emitting element, 130c: light-emitting element, 130: light-emitting element, 131: protective layer, 140: connection part, 142: adhesive layer, 150: light-receiving element, 151: substrate, 152: substrate, 153: insulating layer, 155: PD layer, 162: display part, 164: circuit part, 165: wiring, 166: conductive layer, 172: FPC, 173: IC, 180a: EL film, 180b: EL film,180c: EL film, 180: EL film, 181a: nozzle, 181b: nozzle, 181c: nozzle, 182a: droplet, 182b: droplet, 182c: droplet, 190: resist mask, 191a: FMM, 191b: FMM, 191c: FMM, 191: FMM, 201: transistor, 204: connector, 205: transistor, 209: transistor, 210: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer ,231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 240: capacitance, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 251: conductive layer, 252: conductive layer, 254: insulating layer, 255a: insulating layer, 255b: insulating layer, 256: plug, 261: insulating layer, 262: insulating layer, 263: insulating layer, 264: insulating layer, 265: insulating layer, 271: plug, 274a: conductive layer, 274b: conductive layer, 274: plug, 280: display module, 281: display unit, 282: circuit unit, 283a: pixel circuit, 283: pixel circuit unit, 28 4a: Pixel, 284: Pixel section, 285: Terminal section, 286: Wiring section, 290: FPC, 291: Substrate, 292: Substrate, 301A: Substrate, 301B: Substrate, 301: Substrate, 310A: Transistor, 310B: Transistor, 310: Transistor, 311: Conductive layer, 312: Low resistance region, 313: Insulating layer, 314: Insulating layer, 315: Element isolation layer, 320A: Transistor, 320B: Transistor, 320: Transistor, 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 327: Conductive layer, 328: Insulating layer, 32 9: insulating layer, 331: substrate, 332: insulating layer, 335: insulating layer, 336: insulating layer, 341: conductive layer, 342: conductive layer, 343: plug, 344: insulating layer, 345: insulating layer, 346: insulating layer, 347: bump, 348: adhesive layer, 400: display device, 403[1,1]: pixel, 403[1,2]: pixel, 403[2,1]: pixel, 403[2,2]: pixel, 403: pixel, 700A: electronic device, 700B: electronic device, 721: housing, 723: mounting part, 727: earphone part, 750: earphone, 751: display panel, 753: optical component, 756: display area,757: Frame, 758: Nose pad, 772: Lower electrode, 785: Layer, 786a: EL layer, 786b: EL layer, 786: EL layer, 788: Upper electrode, 800A: Electronic equipment, 800B: Electronic equipment, 820: Display unit, 821: Housing, 822: Communication unit, 823: Mounting unit, 824: Control unit, 825: Imaging unit, 827: Earphone unit, 832: Lens, 2800: Personal computer, 2801: Housing, 2802: Housing, 2803: Display unit, 2804: Keyboard, 2805: Pointing device, 2806: Secondary battery, 2807: Secondary battery, 44 11: Light-emitting layer, 4412: Light-emitting layer, 4413: Light-emitting layer, 4420: Layer, 4421: Layer, 4422: Layer, 4430: Layer, 4431: Layer, 4432: Layer, 4440: Charge generation layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7 000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 8300: Electronic equipment, 8301: Enclosure, 8302: Display unit, 8303: Operation buttons, 8304: Fixture , 8305: Lens, 8306: Dial, 8307: Dial, 8308: Drive unit, 8310: User, 8311: User, 9000: Housing, 9001: Display unit, 9002: Camera, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9103: Tablet terminal, 9200: Personal digital assistant, 9201: Personal digital assistant,

Claims

1. The device comprises a first pixel electrode, a second pixel electrode, a third pixel electrode, and a fourth pixel electrode; a first EL layer on the first pixel electrode, a second EL layer on the second pixel electrode, a third EL layer on the third pixel electrode, and a fourth EL layer on the fourth pixel electrode; a common layer on the first to fourth EL layers and on the insulating layer; and a common electrode on the common layer. The first EL layer, the second EL layer, the third EL layer, and the fourth EL layer are arranged adjacent to each other in this order in one direction. The common layer comprises at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. The first EL layer and the second EL layer emit light of the same color. The third EL layer and the fourth EL layer emit light of the same color. The third and fourth EL layers are display devices that emit light of a different color from the first and second EL layers.

2. In claim 1, It has a first transistor, a second transistor, a third transistor, and a fourth transistor, Either the source or the drain of the first transistor is electrically connected to the first pixel electrode. Either the source or the drain of the second transistor is electrically connected to the second pixel electrode. Either the source or the drain of the third transistor is electrically connected to the third pixel electrode. Either the source or the drain of the fourth transistor is electrically connected to the fourth pixel electrode. A display device in which one or more of the first to fourth transistors have a metal oxide in the channel forming region.

3. In claim 1 or 2, A display device in which insulating layers are provided in the region between the first EL layer and the second EL layer, the region between the second EL layer and the third EL layer, and the region between the third EL layer and the fourth EL layer.

4. In claim 3, The insulating layer is a display device having an organic material.

5. In claim 3, The insulating layer is a display device containing a photosensitive material.

Images