Method for manufacturing a dicing die bonding film and a semiconductor device.

Abstract

The present invention discloses a dicing / die-bonding film that comprises: a die-bonding film; and a dicing film that includes a pressure-sensitive adhesive layer which is adhered to the die-bonding film. The thickness of an adhesive layer is no more than 10 μm. The thickness of the pressure-sensitive adhesive layer is less than 10 μm. The dicing film may also include a substrate film. The pressure-sensitive adhesive layer may be disposed on the substrate film.

Description

Technical Field

[0001] The present disclosure relates to a dicing die bonding film and a method for manufacturing a semiconductor device using the same. Background Art

[0002] A dicing die bonding film (semiconductor processing tape), which is an integrated product of a dicing film used for fixing a semiconductor wafer during the step of dicing and dividing the semiconductor wafer and a die bonding film for bonding between chips or between a chip and a substrate, is sometimes used for manufacturing semiconductor devices (for example, Patent Documents 1 and 2). The die bonding film constituting the dicing die bonding film generally often has a thickness of about several tens of micrometers. Prior Art Literature Patent Documents

[0003] Patent Document 1 Japanese Patent No. 6535117 Patent Document 2 Japanese Patent No. 6928852 Summary of the Invention Problems to be Solved by the Invention

[0004] Along with the increase in the number of stacked chips in semiconductor packages and the thinning of chips, application of an extremely thin die bonding film having a thickness of 10 μm or less has been desired. However, it has been revealed that when the die bonding film is thinned to a thickness of 10 μm or less, the die bonding film may be difficult to divide in the step of dividing a semiconductor wafer by a method including stretching the dicing die bonding film. If the die bonding film is not easily divided, it becomes difficult to pick up a chip with the singulated die bonding film attached thereto, which may lead to a decrease in yield in semiconductor manufacturing.

[0005] One aspect of this disclosure relates to improving the detachability of a die bonding film in a process of dividing a semiconductor wafer by a method that includes stretching a die bonding film, with respect to a dicing die bonding film having a thickness of 10 μm or less. [Means for solving the problem]

[0006] One aspect of this disclosure relates to a dicing die bonding film comprising a die bonding film and a dicing film having an adhesive layer bonded to the die bonding film. The thickness of the die bonding film is 10 μm or less, and the thickness of the adhesive layer is less than 10 μm.

[0007] Another aspect of the present disclosure relates to a method for manufacturing a semiconductor device, comprising: attaching the die bonding film of the dicing die bonding film to a semiconductor wafer; and dividing the semiconductor wafer and the die bonding film by a method including stretching the dicing die bonding film, thereby forming a chip and a die bonding film-attached chip having the individual pieces of the die bonding film on the adhesive layer.

[0008] This disclosure includes the following: [1] Die bonding film and A dicing film having an adhesive layer bonded to the die bonding film, Equipped with, The thickness of the die bonding film is 10 μm or less. The thickness of the adhesive layer is less than 10 μm. Dicing die bonding film. [2] The dicing die bonding film according to [1], wherein the 30° peel strength of the adhesive layer to the die bonding film is 6.0 N / 25 mm or more. [3] The dicing die bonding film according to [1] or [2], wherein the dicing film further comprises a base film, and the adhesive layer is provided on the base film. [4] [1] to [3] The die bonding film of the dicing die bonding film described in any one of the above items is attached to a semiconductor wafer. The semiconductor wafer and the die bonding film are divided by a method including stretching the dicing die bonding film, thereby forming a chip and a die bonding film-attached chip having the individual pieces of the die bonding film on the adhesive layer. A method for manufacturing a semiconductor device, including [a specific component]. [5] The method according to [4], wherein the method for dividing the semiconductor wafer and the die bonding film is a stealth dicing method. [Effects of the Invention]

[0009] With respect to a dicing die bonding film having a die bonding film with a thickness of 10 μm or less, the interlocking properties of the die bonding film in a process of dividing a semiconductor wafer by a method that includes stretching the dicing die bonding film can be improved. [Brief explanation of the drawing]

[0010] [Figure 1] These are a plan view and a cross-sectional view showing an example of a dicing die bonding film. [Figure 2] This is a process diagram showing an example of a method for manufacturing a semiconductor device. [Figure 3] This is a process diagram showing an example of a method for manufacturing a semiconductor device. MODES FOR CARRYING OUT THE INVENTION

[0011] The present invention is not limited to the examples described below. In the following description, each constituent element (including steps and the like) is not essential unless explicitly specified. The sizes of the constituent elements in each drawing are conceptual, and the relative relationship of sizes between the constituent elements is not limited to that shown in each drawing. The numerical values and their ranges in the present disclosure do not limit the present invention. In the present specification, a numerical range indicated using "~" indicates a range including the numerical values described before and after "~" as the minimum value and the maximum value, respectively. In the numerical ranges described stepwise in the present specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of another stepwise described numerical range. In the numerical ranges described in the present specification, the upper limit or lower limit of the numerical range may be replaced with the values shown in the examples.

[0012] In the present specification, (meth)acrylate means acrylate or the corresponding methacrylate. This also applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer. Unless otherwise specified, each component and material exemplified in the present specification may be used alone or in combination of two or more.

[0013] FIG. 1(a) is a plan view showing an example of a dicing die bonding film, and FIG. 1(b) is a cross-sectional view taken along line B-B of FIG. 1(a). The dicing die bonding film 10 shown in FIG. 1 is composed of a die bonding film 1 and a dicing film 5 having an adhesive layer 2 bonded to the die bonding film 1. The dicing film 5 has a base film 3, and the adhesive layer 2 is provided on the base film 3. FIG. 1 also shows a semiconductor wafer Wa to which the die bonding film 1 is attached.

[0014] The die bonding film 1 is an adhesive film for bonding a chip to another chip or a substrate, and is sometimes referred to as a die attach film (DAF). The die bonding film 1 exemplified in FIG. 1 has a circular main surface that covers the entire main surface of a semiconductor wafer Wa.

[0015] The die bonding film 1 can have a thickness of 10 μm or less. A thickness of 10 μm or less of the die bonding film 1 is advantageous, for example, for manufacturing a thin semiconductor package including multi-layer chips. The thickness of the die bonding film 1 may be 9 μm or less, 8 μm or less, or 7 μm or less, and may be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more. The thickness of the die bonding film 1 may be 1 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less; may be 2 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less; may be 3 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less; may be 4 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less; and may be 5 μm or more and 10 μm or less, 9 μm or less, 8 μm or less, or 7 μm or less.

[0016] The die bonding film 1 can be a film formed from an adhesive that is normally used for chip bonding. The die bonding film 1 may be a thermosetting adhesive. The thermosetting adhesive constituting the die bonding film 1 includes, for example, a high molecular weight resin component and a thermosetting component.

[0017] The high molecular weight resin component that can be contained in the die bonding film 1 may include, for example, at least one resin selected from the group consisting of acrylic rubber, polyimide, and phenoxy resin. The high molecular weight resin component may have a reactive group such as an epoxy group. The weight average molecular weight (standard polystyrene equivalent value determined by GPC method) of the high molecular weight resin component may be 100,000 to 3,000,000. The content of the high molecular weight resin component may be 30 to 80 parts by mass relative to 100 parts by mass of the total mass of the die bonding film 1.

[0018] The thermosetting component that may be included in the die bonding film 1 is a compound having a reactive group that forms a crosslinked structure by self-polymerization and / or reaction with a curing agent. The thermosetting component may include, for example, at least one selected from the group consisting of epoxy resin, bismaleimide resin, triazine resin, and phenolic resin. The content of the thermosetting component may be 1 to 30 parts by mass per 100 parts by mass of the die bonding film 1.

[0019] The thermosetting adhesive constituting the die bonding film 1 may contain other components as needed. Examples of other components include a curing agent that reacts with the thermosetting component, a curing accelerator that promotes the reaction between the thermosetting component and the curing agent, a coupling agent (e.g., a silane coupling agent), and a filler (e.g., silica).

[0020] The dicing film 5 comprises a base film 3 having a rectangular main surface and an adhesive layer 2 provided on the base film 3. The adhesive layer 2 has a main surface 2a that contacts the base film 3 and a main surface 2b that contacts the die bonding film 1. The main surfaces 2a and 2b of the adhesive layer 2 can be circular surfaces sized to cover the entire main surface of the die bonding film 1.

[0021] The adhesive layer 2 may have a thickness of less than 10 μm. If the thickness of the adhesive layer 2 is less than 10 μm, the die bonding film 1 having a thickness of 10 μm or less is particularly easily separated in the process of dividing the semiconductor wafer Wa by a method that includes stretching the dicing die bonding film 10. Generally, a thinner adhesive layer tends to reduce adhesive strength, so a thin adhesive layer is expected to be disadvantageous for holding chips. However, according to the inventors' findings, if the thickness of the die bonding film 1 is 10 μm or less, even if the thickness of the adhesive layer 2 is less than 10 μm, the scattering of chips formed by dividing the semiconductor wafer Wa is sufficiently suppressed. From a similar viewpoint, the thickness of the adhesive layer 2 may be 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less. The thickness of the adhesive layer 2 may be 0.5 μm or more, 1 μm or more, or 2 μm or more. The thickness of the adhesive layer 2 may be 0.5 μm or more but less than 10 μm, 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less; it may be 1 μm or more but less than 10 μm, 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less; and it may be 2 μm or more but less than 10 μm, 9 μm or less, 8 μm or less, 7 μm or less, 6 μm or less, 5 μm or less, 4 μm or less, or 3 μm or less.

[0022] The adhesive layer 2 may be a layer formed of an adhesive commonly used in dicing films. The adhesive constituting the adhesive layer 2 may be a pressure-sensitive adhesive or an ultraviolet-curing adhesive. An ultraviolet-curing adhesive is an adhesive that has the property of decreasing in adhesiveness when exposed to ultraviolet light. By using an ultraviolet-curing adhesive, for example, the adhesive strength of the adhesive layer 2 can be reduced by ultraviolet light irradiation before picking up the chip to which the die bonding film is attached.

[0023] The UV-curable adhesive may, for example, contain an acrylic resin having (meth)acryloyl groups. The acrylic resin may also have hydroxyl groups. The acrylic resin is a polymer containing (meth)acryloyl ester as a monomer unit. The UV-curable adhesive may further contain other components as needed, such as a photopolymerization initiator and a crosslinking agent (e.g., a polyisocyanate compound). The crosslinking agent is a compound having a reactive group that reacts with the acrylic resin, and an example of such a compound is a polyisocyanate compound.

[0024] A high peel strength of the adhesive layer 2 relative to the die bonding film 1 contributes to suppressing chip scattering and peeling of the die bonding film 1 from the adhesive layer 2 in the process of forming chips by splitting the semiconductor wafer Wa. From this viewpoint, for example, the 30° peel strength of the adhesive layer 2 relative to the die bonding film 1 may be 6.0 N / 25 mm or higher. The 30° peel strength is the peel strength determined from the stress when the adhesive layer 2 is peeled off at a 30° angle to the main surface of the die bonding film 1. Details of the method for measuring the 30° peel strength will be explained in the examples described later. If the adhesive layer 2 is formed of an ultraviolet-curable adhesive, the 30° peel strength of the adhesive layer 2 relative to the die bonding film 1 shown before ultraviolet irradiation may be 6.0 N / 25 mm or higher. The 30° peel strength (30° peel strength before UV irradiation) of the adhesive layer 2 to the die bonding film 1 may be 20N / 25mm or less, 17.5N / 25mm or less, or 15N / 25mm or less.

[0025] The 30° peel strength of the adhesive layer 2 relative to the die bonding film 1 before UV irradiation is 6.0 N / 25 mm or higher, and the irradiation dose is 150 N / cm². 2The 30° peel strength of the adhesive layer 2 relative to the die bonding film 1 after UV irradiation may be 1.5 N / 25 mm or less. This decrease in the 30° peel strength of the adhesive layer 2 due to UV irradiation is particularly advantageous in suppressing chip scattering and delamination of the die bonding film 1 from the adhesive layer 2, as well as facilitating chip pickup. The 30° peel strength here can be a value measured under conditions of 23°C and 40% relative humidity.

[0026] The base film 3 constituting the dicing film 5 can be selected from base films constituting dicing die bonding films that are commonly used in the process of dividing a semiconductor wafer by a method that includes stretching a dicing die bonding film. The base film 3 may be a resin film, for example, a resin film containing a resin selected from polyester (polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate, etc.), polyolefin (polyethylene film, polypropylene, etc.), polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, and polyphenylene sulfide. The base film 3 may be a single-layer film or a multilayer film composed of two or more films. The thickness of the base film 3 may be, for example, 10 μm or more, 15 μm or more, or 20 μm or more, or 200 μm or less, 175 μm or less, or 150 μm or less.

[0027] The base film 3 illustrated in Figure 1 has a rectangular main surface, but the shape of the base film 3 is not limited to this. The base film 3 may be a long film. Multiple adhesive layers 2 may be arranged on a single long base film 3.

[0028] Figures 2 and 3 are process diagrams showing an example of a method for manufacturing a semiconductor device using the dicing die bonding film exemplified above. The method shown in Figures 2 and 3 includes attaching the die bonding film 1 of the dicing die bonding film 10 to a semiconductor wafer Wa, stretching the dicing die bonding film 10 to divide the semiconductor wafer Wa and the die bonding film 1, thereby forming a plurality of die bonding film-attached chips 30 having chip C and individual die bonding film 1a on an adhesive layer 2, shrinking the dicing film 5 by heating, and picking up the die bonding film-attached chips 30.

[0029] The semiconductor wafer Wa has two main surfaces F1 and F2. For example, main surface F1 may be the circuit surface and main surface F2 may be the back surface opposite the circuit surface. The semiconductor wafer Wa may be a silicon wafer. When the semiconductor wafer Wa is divided by the stealth dicing method, before the die bonding film 1 is attached, the semiconductor wafer Wa may be irradiated with laser light to form a modified layer along the planned cutting line. After that, the semiconductor wafer Wa may be subjected to back grinding and polishing.

[0030] In the example shown in Figure 2(a), the die bonding film 1 is attached to the semiconductor wafer Wa in a orientation that contacts the main surface F2 of the semiconductor wafer Wa. Furthermore, a dicing ring DR is attached to the main surface 2b of the adhesive layer 2 on the die bonding film 1 side, surrounding the semiconductor wafer Wa.

[0031] Subsequently, as shown in Figure 2(b), the dicing film 5 is stretched by pushing up the area inside the dicing ring DR of the dicing film 5 with ring Ra under low temperature conditions. The temperature at this time may be, for example, -15 to 0°C. In the stealth dicing method, the stretching of the dicing film 5 separates the semiconductor wafer Wa and the die bonding film 1 along the modified layer within the semiconductor wafer Wa. This separation divides the semiconductor wafer Wa into multiple chips C, and the die bonding film 1 is divided into individual pieces 1a that adhere to each chip C. That is, a die bonding film-attached chip 30, having chips C and individual pieces of die bonding film 1a, is formed on the adhesive layer 2.

[0032] After the ring Ra is lowered, the region of the dicing film 5 between the dicing ring DR and the die bonding film-attached chip 30 is heated by the heater H, as shown in Figure 3(a). The contraction of the heated portion of the dicing film 5 further widens the gap between the die bonding film-attached chips 30.

[0033] If necessary, the adhesive strength of the adhesive layer 2 is reduced by ultraviolet irradiation, and then, as shown in Figure 3(b), the individual die-bonding film-equipped chips 30 that have been pushed up by the push-up jig 42 are picked up by the suction collet 44. The picked-up die-bonding film-equipped chips 30 may be pressed onto a circuit board or other chips.

[0034] The dicing die bonding film according to this disclosure is particularly useful for manufacturing semiconductor devices by a method that includes dividing a fragile thin semiconductor wafer and a die bonding film. The thickness of the divided semiconductor wafer and the individual chips may be, for example, 50 μm or less, or 10 μm or more.

[0035] The dicing die bonding film according to this disclosure is also useful for manufacturing semiconductor devices by a method that includes forming chips having a rectangular main surface by dividing a semiconductor wafer. On the main surface of the formed chip, the ratio of the long side to the short side may be 3 or more, or 10 or less. The thickness of the chip having a rectangular main surface may be 50 μm or less. By stacking multiple thin chips having a rectangular main surface, for example, 3D NAND flash memory can be manufactured. [Examples]

[0036] The present invention is not limited to the following embodiments. Unless otherwise specified, all materials used were obtained as reagents.

[0037] Example 1 1. Synthesis of acrylic resin The following components were placed in a 2000 ml flask equipped with a three-way motor, stirring blades, and a nitrogen inlet tube to form a reaction solution. Ethyl acetate (solvent): 635g 2-Ethylhexyl acrylate: 395g 2-Hydroxyethyl acrylate: 100g • Methacrylic acid: 5g • Azobisisobutyronitrile: 0.2g

[0038] After stirring the reaction mixture until it was sufficiently homogeneous, dissolved oxygen was removed from the system by bubbling with nitrogen gas at a flow rate of 500 mL / min for 60 minutes. The reaction mixture was heated to 78°C over 1 hour, and the polymerization reaction was allowed to proceed at this temperature for 6 hours. The reaction mixture was then transferred to a 2000 mL pressurized vessel equipped with a three-way motor, stirring blades, and a nitrogen inlet tube. Inside the pressurized vessel, the reaction mixture was heated to 120°C for 4.5 hours under an atmosphere of 0.28 MPa pressure. After that, the reaction mixture containing the resulting polymer was cooled to room temperature (25°C, the same applies below).

[0039] 490 g of ethyl acetate was added to the reaction mixture and the mixture was stirred. Next, 0.025 g of methoquinone (polymerization inhibitor) and 0.10 g of dioctyl tin dilaurate (urethane catalyst) were added. Furthermore, 81 g of 2-methacryloyloxyethyl isocyanate (manufactured by Resonaq Corporation, Karenz MOI (trade name)) was added to the reaction mixture, and the reaction mixture was heated at 70°C for 6 hours to allow the reaction between the polymer and the 2-methacryloyloxyethyl isocyanate to proceed. After the reaction mixture was cooled to room temperature, ethyl acetate was added to obtain an acrylic resin solution containing an acrylic resin having methacryloyloxy groups and hydroxyl groups at a concentration of 35% by mass.

[0040] The obtained acrylic resin solution was vacuum-dried overnight at 60°C, and the remaining solid content was subjected to elemental analysis using a fully automated elemental analyzer (Elemental, product name: varioEL). From the nitrogen content obtained from the elemental analysis, the amount of 2-methacryloyloxyethyl groups introduced per gram of acrylic resin was calculated to be 0.89 mmol / g.

[0041] The weight-average molecular weight (equivalent to standard polystyrene) of acrylic resin was determined by GPC measurement. Tosoh Corporation's SD-8022 / DP-8020 / RI-8020 was used for the GPC measurement. Resonaq Corporation's Gelpack GL-A150-S / GL-A160-S was used as the column. Tetrahydrofuran was used as the eluent. The weight-average molecular weight of the acrylic resin was 350,000.

[0042] 2. Dicing film A varnish (concentration of non-solvent components: 25% by mass) for forming an ultraviolet-curable adhesive layer was prepared by mixing the following components. The acrylic resin was synthesized in "1. Synthesis of Acrylic Resin". "Solid content" refers to the amount of non-solvent components. • Acrylic resin: 100 parts by mass (solids) • Photopolymerization initiator (1-hydroxycyclohexyl phenyl ketone, manufactured by Ciba Specialty Chemicals, Inc., Irgacure 184, "Irgacure" is a registered trademark): 2.0 parts by mass • Crosslinking agent (polyfunctional isocyanate, manufactured by Nippon Polyurethane Industry Co., Ltd., Coronate L, solids content 75%): 4.1 parts by mass (solids content) • Ethyl acetate (solvent)

[0043] A polyethylene terephthalate film (450 mm wide, 500 mm long, 38 μm thick) with a release surface was prepared as a cover film. Varnish was applied to the release surface of the cover film using an applicator, and the coating was dried at 80°C for 5 minutes. This resulted in a laminated film consisting of the cover film and an adhesive layer (2 μm thick) formed on top of it.

[0044] A polyolefin film (450 mm wide, 500 mm long, 100 μm thick) with a corona-treated surface was prepared as the base film. Hereinafter, the longitudinal direction of the base film will be referred to as the MD direction, and the direction perpendicular to the MD direction will be referred to as the TD direction. This base film was laminated at room temperature to the adhesive layer of the laminated film with the corona-treated surface facing the adhesive layer. Next, the entire structure was pressed with a rubber roll to ensure close adhesion of the base film to the adhesive layer. The dicing film, comprising the base film, adhesive layer, and cover film, was left at room temperature for 3 days.

[0045] 3. Die bonding film The following ingredients and a mixture containing cyclohexanone were stirred and then kneaded for 90 minutes using a bead mill. • Epoxy resin (N500P-10 (product name), DIC Corporation, cresol novolac type epoxy resin, epoxy equivalent weight 200, molecular weight 980, softening point 85℃): 55 parts by mass • Phenolic resin (MEH-7800M (product name), manufactured by Meiwa Kasei Co., Ltd., hydroxyl group equivalent 175): 45 parts by mass • Silane coupling agent 1 (NUC A-189 (product name), manufactured by Nippon Unicar Co., Ltd., γ-mercaptopropyltrimethoxysilane): 1.7 parts by mass • Silane coupling agent 2 (NUCA-1160 (product name), manufactured by Nippon Unicar Co., Ltd., γ-ureidopropyltriethoxysilane): 0.2 parts by mass • Filler (Aerosil R972 (product name), manufactured by Nippon Aerosil Co., Ltd., silica, average particle size 0.016 μm): 32 parts by mass "Aerosil R972" is a silica particle having an organic group (for example, a methyl group) on its surface.

[0046] The following components were added to the kneaded mixture, and the mixture was further stirred. Subsequently, a varnish for die bonding film formation was obtained by vacuum degassing. • Acrylic rubber containing epoxy groups (HTR-860P-3 (product name), manufactured by Nagase ChemteX Corporation, glycidyl acrylate or glycidyl methacrylate content: 3% by mass, weight-average molecular weight: 800,000): 280 parts by mass • Curing accelerator (Curezol 2PZ-CN (trade name), "Curezol" is a registered trademark, manufactured by Shikoku Chemicals Co., Ltd., 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass

[0047] A polyethylene terephthalate film (35 μm thick) with a release surface was prepared as a carrier film. A varnish for die bonding film formation was applied to the release surface of the carrier film, and the coating was heated and dried at 140°C for 5 minutes. This resulted in a laminated film consisting of the carrier film and a die bonding film in the B-stage state (a 7 μm thick adhesive layer) formed on top of it.

[0048] 4. Preparation of dicing die bonding film A laminated film with a die bonding film was cut into a circular shape (diameter: 312 mm). A dicing film, with its cover film removed, was attached to the circular die bonding film with its adhesive layer in contact with the die bonding film. The formed laminate was left at room temperature for one day. After that, the outer part of the dicing film that was attached to the die bonding film was cut off to obtain a dicing die bonding film having a circular die bonding film and a circular dicing film (diameter: 370 mm) that covered the die bonding film and extended beyond it. Multiple dicing die bonding films were prepared by the same procedure for use in the various evaluation tests described later.

[0049] Examples 2-5 and Comparative Examples 1-5 Multiple dicing die bonding films were prepared in the same manner as in Example 1, except that the thickness of the die bonding film and adhesive layer was changed as shown in Table 1 or Table 2.

[0050] Reference examples 1~3 Multiple dicing die bonding films were prepared in the same manner as in Example 1, except that the thickness of the die bonding film was changed to 20 μm and the thickness of the adhesive layer was changed as shown in Table 1.

[0051] 5. Rating (1) Adhesion strength of the adhesive layer to the die bonding film (30° peel strength) From each dicing die bonding film, a measurement sample (a laminate consisting of an adhesive layer and a bonding layer (die bonding film)) with dimensions of 25 mm in width and 100 mm in length was cut out. For each measurement sample, an illuminance of 100 mW / cm² was applied. 2 , irradiation amount 150mJ / cm 2Ultraviolet (UV) light was irradiated under the specified conditions. For the samples before and after UV irradiation, the peel strength (30° peel strength) was measured when the adhesive layer was peeled off the die bonding film at a peel angle of 30°. The tensile speed was 60 mm / min. The samples were stored in an environment with a temperature of 23°C and a relative humidity of 40%, and the 30° peel strength was measured in the same environment.

[0052] (2) Process evaluation (i) Dicing test A protective tape was applied to the surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm). By irradiating the silicon wafer with laser light on the side with the protective tape and the opposite side under the following stealth dicing conditions, a modified layer for stealth dicing was formed inside the silicon wafer along the planned cutting lines, which consisted of multiple mutually orthogonal straight lines. Stealth dicing conditions: • Stealth dicing device: DFL7361 (manufactured by DISCO Corporation) • Laser oscillator type: Semiconductor laser-pumped Q-switched solid-state laser ·Wavelength: 1342nm • Frequency: 60kHz Output: 0.8W • Number of passes: 2 • Tip size: 3mm x 12mm • Dicing speed: 800 mm / second

[0053] The side of the silicon wafer opposite the protective tape was polished using a grinder polisher (DGP8761, manufactured by DISCO Corporation) until the silicon wafer thickness was 30 μm. The polished side of the silicon wafer was attached to the die bonding film of the dicing die bonding film under the following conditions. At this time, the orientation of attachment was adjusted so that the direction of the modified layer of the silicon wafer aligned with the MD direction and TD direction of the base film of the dicing die bonding film. Furthermore, the adhesive layer of the portion that extended beyond the die bonding film was attached to the dicing ring. After that, the protective tape was peeled off from the silicon wafer. Application conditions: • Application device: DFM2800 (manufactured by DISCO Corporation) • Application temperature: 65℃ • Application speed: 10mm / s • Adhesion tension level: Level 7

[0054] Next, the dicing die bonding film was stretched by cooling and expanding under the following conditions using a die separator (DDS2300, manufactured by Disco Corporation), thereby separating the silicon wafer and the die bonding film. Subsequently, the dicing film was shrunk by heating under the following conditions. Cooling and expansion conditions: ·Cooling temperature: 0℃ ·Cooling time: 120 seconds • Push-up amount: 10mm • Lifting speed: 120 mm / second • Holding time after thrust: 10 seconds Heating conditions: • Heater temperature: 250℃ • Heater rotation speed: 10° / second • Push-up amount: 8mm • Tape cooling time: 10 seconds

[0055] After the dicing film had shrunk, the adhesive layer was irradiated with ultraviolet light under the following conditions to reduce its adhesive strength. UV irradiation conditions: • Ultraviolet irradiance: 100 mW / cm² 2 • UV radiation dose: 150 mJ / cm² 2

[0056] (ii) Processability Retention During the dicing test, we checked for chip scattering and for delamination between the adhesive layer (die bonding film) and the tack layer in the portion of the chip that protruded from the silicon wafer. Retention was evaluated according to the following criteria. A: No chip scattering, and no delamination at the interface between the adhesive layer and the tack layer. B: No chip scattering, but there is delamination at the interface between the adhesive layer and the tack layer. C: Chip scattering present

[0057] Fragmentation The die bonding film between adjacent chips was observed, and the degree of separation was evaluated based on the number of unseparated sections of the die bonding film according to the following criteria. A:0 B: 1 or more and less than 10 C:10 or more

[0058] Calf width The width of the grid-like gaps (kerf width) formed between adjacent chips was measured by microscopic observation. The kerf width of the gaps along the MD or TD direction around the chips was measured at two locations near each of the four positions that divide the outer periphery of the silicon wafer into four equal parts, and at one location in the center of the silicon wafer. The average value of the kerf widths of the gaps along the MD or TD direction measured at a total of nine locations was calculated.

[0059] Pickup performance After evaluating retention, breakability, and calf width, 100 die-bonded film-attached tips were selected under the following conditions. Pickup conditions: • Die bonder: DB830-P (manufactured by Fasford Technology Co., Ltd.) • Push-up pin: EJECTOR NEEDLE SEN2-83-05 (Diameter: 0.7mm, Tip shape: Hemisphere with radius 350μm, manufactured by Micromechanics Co., Ltd.) • Push-up height: 250 μm • Pushing speed: 1 mm / second • Number of push-up pins: 8 Based on the success rate of pickup, the pickup performance was evaluated according to the following criteria: A: 100% B: 80% or more but less than 100% C: 60% to less than 80%

[0060] [Table 1]

[0061] [Table 2]

[0062] Table 1 shows the evaluation results. As in Reference Examples 1-3, when the die bonding film thickness is 20 μm, a thinner adhesive layer tends to increase the likelihood of delamination of the die bonding film during the dicing process. However, as in Examples 1-5 and Comparative Examples 1-5, when the die bonding film thickness is 10 μm or less, it was confirmed that good retention during the dicing process is maintained even when the adhesive layer is thin. Furthermore, as in Examples 1-5, it was confirmed that the divisibility of the die bonding film is improved when the adhesive layer thickness is less than 10 μm. In addition, it was confirmed that a thinner adhesive layer makes it easier to secure a larger calf width. [Explanation of Symbols]

[0063] 1…Die bonding film, 1a…Individually separated die bonding film, 2…Adhesive layer, 3…Substrate film, 5…Dicing film, 10…Dicing die bonding film, 30…Chip with die bonding film, C…Chip, Wa…Semiconductor wafer.

Claims

1. Die bonding film and A dicing film having an adhesive layer bonded to the die bonding film, Equipped with, The thickness of the die bonding film is 10 μm or less. The thickness of the adhesive layer is 4 μm or less. Dicing die bonding film.

2. The dicing die bonding film according to claim 1, wherein the 30° peel strength of the adhesive layer to the die bonding film is 6.0 N / 25 mm or more.

3. The dicing die bonding film according to claim 1 or 2, wherein the dicing film further comprises a base film, and the adhesive layer is provided on the base film.

4. The dicing die bonding film according to claim 1 or 2 is attached to a semiconductor wafer, The semiconductor wafer and the die bonding film are divided by a method including stretching the dicing die bonding film, thereby forming a die bonding film-attached chip having chips and individual pieces of the die bonding film on the adhesive layer. A method for manufacturing a semiconductor device, including [a specific component].

5. The method according to claim 4, wherein the method for dividing the semiconductor wafer and the die bonding film is a stealth dicing method.

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