Indication device

Abstract

The present invention provides a method for correcting a display device having a new configuration. A correction circuit of this display device acquires an offset corresponding to a current flowing through a second subpixel when a first subpixel is unlit. The correction circuit of the display device acquires, pixel by pixel, correction output data obtained by correcting data corresponding to the current flowing through the second subpixel by the offset by sequentially giving correction video data to the first subpixel, and stores the correction video data and the correction output data corresponding to the correction video data in a storage circuit. The correction circuit of the display device calculates coefficients when relations between the correction video data and the correction output data corresponding to the correction video data are approximated by a quadratic expression, and stores the coefficients in the storage circuit. The correction circuit of the display device stores a correction table created on the basis of the correction output data and the coefficients. The correction circuit of the display device corrects display video data according to the correction table.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a semiconductor device, a display device, a display module, and electronic equipment. Another aspect of the present invention relates to a method for correcting video data for display on a display device, and a display device, etc.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] Display devices using organic electroluminescent (EL) devices do not require a backlight, which is necessary for liquid crystal displays, and are therefore ideal for making devices thinner. As a result, their use is increasing in information terminal devices such as smartphones.

[0004] Organic EL devices may have a reduced yield as display devices due to problems such as pixels remaining unlit (black spots) caused by shape defects during device manufacturing. To correct display defects such as black spots, possible countermeasures include checking the illumination status of all pixels by imaging with an external camera during pre-shipment inspection to identify the location of defects, and incorporating a correction algorithm for surrounding pixels at the time of shipment (see, for example, Patent Document 1). [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2009-3092 [Overview of the project] [Problems that the invention aims to solve]

[0006] Display devices using organic EL devices are becoming increasingly pixel-high resolution, resulting in a large number of pixels required for display. Therefore, in configurations where all pixels of the display are captured by an external camera during pre-shipment inspection, there is a risk of requiring a large number of captures. Furthermore, it is difficult to capture all pixels using an external camera during post-shipment inspection. There are also methods to identify defective pixels and correct the video data using control circuits such as external compensation circuits, but it is difficult to correct the relative brightness variations between pixels.

[0007] One aspect of the present invention aims to provide a novel correction method for a display device and a display device, etc., with a novel configuration. Alternatively, one aspect of the present invention aims to provide a novel correction method for a display device and a display device, etc., with a novel configuration that can correct variations in brightness between pixels even after shipment. Alternatively, one aspect of the present invention aims to provide a novel correction method for a display device and a display device, etc., with a novel configuration that can correct variations in brightness between pixels without increasing the number of imaging cycles.

[0008] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0009] One aspect of the present invention is a method for correcting a display device, wherein the display device comprises a display unit, a correction circuit, and a storage circuit, the display unit having a plurality of pixels, each having a first sub-pixel having a light-emitting device and a second sub-pixel having a light-receiving device, the correction circuit acquires an offset corresponding to the current flowing through the second sub-pixel when the first sub-pixel is not lit, and acquires correction output data for each pixel by sequentially providing correction video data to the first sub-pixel to correct the data corresponding to the current flowing through the second sub-pixel with the offset, stores the correction video data and the correction output data corresponding to the correction video data in the storage circuit, calculates a coefficient when the relationship between the correction video data and the correction output data corresponding to the correction video data is approximated by a quadratic equation, stores the coefficient in the storage circuit, creates a correction table based on the correction output data and the coefficient, stores the correction table in the storage circuit, and corrects the display video data according to the correction table, this is a method for correcting a display device.

[0010] In one embodiment of the present invention, the quadratic formula is given by D DATA , Correction output data D PI This is the equation represented by formula (1) when this is the case.

[0011]

number

[0012] A preferred method for correcting a display device is one in which the coefficients are α and β in formula (1).

[0013] One aspect of the present invention is a method for correcting a display device, comprising a display unit, a correction circuit, and a storage circuit, wherein the display unit has a plurality of pixels, each having a first sub-pixel having a light-emitting device and a second sub-pixel having a light-receiving device, the correction circuit acquires an offset corresponding to the current flowing through the second sub-pixel when the first sub-pixel is not lit, acquires first correction output data corresponding to the current flowing through the second sub-pixel when the first sub-pixel is lit at maximum grayscale, sequentially provides correction video data to the first sub-pixel to acquire correction output data for each pixel, correcting the data corresponding to the current flowing through the second sub-pixel with an offset, determines second correction output data according to grayscale based on the first correction output data, stores a correction table created based on the correction video data corresponding to the second correction output data in the storage circuit, and corrects the display video data according to the correction table.

[0014] In one embodiment of the present invention, a preferred method for correcting a display device is one in which the display device has a reflector, and the acquisition of offset and correction output data is performed by superimposing the display unit and the reflector.

[0015] One aspect of the present invention is a display device comprising a display unit, a correction circuit, and a memory circuit, wherein the display unit has a plurality of pixels, each having a first sub-pixel having a light-emitting device and a second sub-pixel having a light-receiving device, and the correction circuit has the function of acquiring an offset corresponding to the current flowing through the second sub-pixel when the first sub-pixel is not lit, acquiring correction output data for each pixel by sequentially supplying correction video data to the first sub-pixel to correct the data corresponding to the current flowing through the second sub-pixel with an offset, and storing the correction video data and the correction output data corresponding to the correction video data in the memory circuit, calculating a coefficient when the relationship between the correction video data and the correction output data corresponding to the correction video data is approximated by a quadratic equation, storing the coefficient in the memory circuit, creating a correction table based on the correction output data and the coefficient, and storing the correction table in the memory circuit, and correcting the display video data according to the correction table.

[0016] In one embodiment of the present invention, the quadratic formula is given by D DATA , Correction output data D PI This is the equation represented by formula (1) when this is the case.

[0017]

number

[0018] A display device is preferred in which the coefficients are α and β in formula (1).

[0019] In one embodiment of the present invention, a display device is preferred in which the display unit and the reflector are superimposed to acquire offset and correction output data.

[0020] In one embodiment of the present invention, a display device is preferred in which the light-emitting device is an organic EL device and the light-receiving device is an organic photodiode. [Effects of the Invention]

[0021] One aspect of the present invention can provide a correction method for a display device and a display device, etc., with a novel configuration. Alternatively, one aspect of the present invention can provide a correction method for a display device and a display device, etc., with a novel configuration that can correct variations in brightness between pixels even after shipment. Alternatively, one aspect of the present invention can provide a correction method for a display device and a display device, etc., with a novel configuration that can correct variations in brightness between pixels without increasing the number of imaging cycles.

[0022] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0023] Figure 1 shows an example of a display device configuration. Figure 2 is a flowchart illustrating an example of the operation of a display device. Figures 3A and 3B are schematic diagrams illustrating examples of the operation of a display device. Figures 4A to 4C show examples of the configuration of a display device. Figure 5 is a flowchart of the display device. Figures 6A and 6B are schematic diagrams illustrating examples of the operation of a display device. Figure 7A is a flowchart showing an example of the operation of the display device. Figure 7B is a block diagram explaining an example of the operation of the display device. Figure 8A is a flowchart showing an example of the operation of the display device. Figure 8B is a schematic diagram showing an example of the operation of the display device. Figure 9A is a flowchart showing an example of the operation of the display device. Figure 9B is a schematic diagram showing an example of the operation of the display device. Figures 10A to 10D show examples of the configuration of a display device. Figures 11A to 11D show examples of the configuration of a display device. Figures 12A to 12F show examples of display device configurations. Figure 13 is a flowchart illustrating an example of the operation of a display device. Figure 14 is a flowchart illustrating an example of the operation of a display device. Figure 15A is a schematic diagram showing an example of the operation of the display device. Figure 15B is a flowchart showing an example of the operation of the display device. Figure 16 is a flowchart illustrating an example of the operation of a display device. Figure 17 is a flowchart illustrating an example of the operation of a display device. Figures 18A and 18B are schematic diagrams illustrating examples of the operation of a display device. Figure 19A is a flowchart showing an example of the operation of the display device. Figure 19B is a schematic diagram showing an example of the operation of the display device. Figures 20A, 20B, and 20D are cross-sectional views showing an example of a display device. Figures 20C and 20E are diagrams showing examples of images captured by the display device. Figure 21 is a cross-sectional view showing an example of a display device. Figures 22A to 22C are cross-sectional views showing an example of a display device. Figures 23A to 23C are cross-sectional views showing an example of a display device. Figures 24A to 24C show examples of display devices. Figures 25A to 25C show examples of electronic devices. Figure 26A is a top view showing an example of a display device. Figure 26B is a cross-sectional view showing an example of a display device. Figures 27A to 27I are top views showing an example of a pixel. Figures 28A to 28E are top views showing an example of a pixel. Figures 29A and 29B are top views showing an example of a pixel. Figures 30A and 30B are top views showing an example of a pixel. Figures 31A and 31B are top views showing an example of a pixel. Figures 32A and 32B are top views showing an example of a pixel. Figures 33A and 33B are top views showing an example of a pixel. Figure 34 is a perspective view showing an example of a display device. Figure 35A is a cross-sectional view showing an example of a display device. Figures 35B and 35C are cross-sectional views showing an example of a transistor. Figure 36 is a cross-sectional view showing an example of a display device. Figures 37A and 37B are perspective views showing an example of a display module. Figure 38 is a cross-sectional view showing an example of a display device. Figures 39A and 39B are cross-sectional views showing an example of a display module. Figure 40 is a cross-sectional view showing an example of a display device. Figure 41 is a cross-sectional view showing an example of a display device. Figure 42 is a cross-sectional view showing an example of a display device. Figure 43 is a cross-sectional view showing an example of a display device. Figures 44A to 44D show examples of transistors. Figures 45A and 45B show examples of electronic devices. Figures 46A to 46D show examples of electronic devices. Figures 47A to 47F show examples of electronic devices. [Modes for carrying out the invention]

[0024] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0025] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0026] The positions, sizes, and extents of each component shown in the drawings may not represent their actual positions, sizes, and extents for the sake of ease of understanding. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, and extents disclosed in the drawings.

[0027] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0028] When the same symbol is used for multiple elements, especially when it is necessary to distinguish them, an identifying symbol such as "_1", "_2", "[n]", or "[m,n]" should be added to the symbol. For example, the second wiring GL should be written as wiring GL[2].

[0029] (Embodiment 1) This embodiment describes a display device according to one aspect of the present invention. In particular, this embodiment describes the circuit configuration of the pixels of the display device.

[0030] <Block diagram of the display device> A block diagram of the display device 10 is shown in Figure 1. The display device 10 includes a display unit 71, a signal line drive circuit 72, a gate line drive circuit 73, a control line drive circuit 74, a signal readout circuit 75, a correction circuit 20, and a memory circuit 23, etc.

[0031] The display unit 71 has a plurality of pixels 80 arranged in a matrix. The pixels 80 include sub-pixels 81R, 81G, 81B, and 82PS. Sub-pixels 81R, 81G, and 81B each have a light-emitting device that functions as a display device. Sub-pixel 82PS has a light-receiving device that functions as a photoelectric conversion element. In one embodiment of the present invention, the display unit has light-emitting devices arranged in a matrix, and can display an image on the display unit. In addition, the display unit in one embodiment of the present invention has a function to detect light using a light-receiving device.

[0032] The light-emitting device (also called a light-emitting element) preferably uses an EL device such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials for EL devices include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence (TADF) materials). LEDs such as microLEDs (Light Emitting Diodes) can also be used as light-emitting devices. As a TADF material, a material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Since such TADF materials have a shorter emission lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting device.

[0033] The light-receiving device (also called a light-receiving element) can be, for example, a pn-type or pin-type photodiode. The light-receiving device has the function of detecting visible light. The light-receiving device is sensitive to visible light. It is even more preferable that the light-receiving device has the function of detecting both visible light and infrared light. It is preferable that the light-receiving device is sensitive to at least one of visible light or infrared light.

[0034] In this specification, the wavelength range for blue (B) is 400 nm or more and less than 490 nm, and blue (B) light has at least one emission spectral peak in this wavelength range. The wavelength range for green (G) is 490 nm or more and less than 580 nm, and green (G) light has at least one emission spectral peak in this wavelength range. The wavelength range for red (R) is 580 nm or more and less than 700 nm, and red (R) light has at least one emission spectral peak in this wavelength range. In this specification, the wavelength range for visible light is 400 nm or more and less than 700 nm, and visible light has at least one emission spectral peak in this wavelength range. The wavelength range for infrared (IR) is 700 nm or more and less than 900 nm, and infrared (IR) light has at least one emission spectral peak in this wavelength range.

[0035] The active layer of a light-receiving device includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In particular, it is preferable to use an organic photodiode having a layer containing an organic semiconductor as the light-receiving device. Organic photodiodes are easy to thin, lighten, and enlarge in area, and offer a high degree of freedom in shape and design, making them applicable to various display devices. Furthermore, using an organic semiconductor is preferable because the EL layer of the light-emitting device and the light-receiving layer of the light-receiving device can be formed using the same method (e.g., vacuum deposition), and common manufacturing equipment can be used.

[0036] In one aspect of the present invention, a display device can suitably use an organic EL device as the light-emitting device and an organic photodiode as the light-receiving device in each pixel. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device. In addition to the function of displaying an image, the display device according to one aspect of the present invention also has one or both of the functions of imaging and sensing.

[0037] In one embodiment of the present invention, the display unit of the display device has light-receiving devices arranged in a matrix, and each pixel of the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light with the display unit, it is possible to capture an image or detect the proximity or contact of an object (such as a finger, hand, or pen). Furthermore, in one embodiment of the present invention, the light-emitting device can be used as the light source of the sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0038] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0039] For example, an image sensor can be used to acquire biometric data such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By having the display device incorporate the biometric authentication sensor, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided, enabling miniaturization and weight reduction of the electronic device.

[0040] When a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect the proximity or contact of an object.

[0041] Pixel 80 is electrically connected to wiring GL, wiring SLR, wiring SLG, wiring SLB, wiring SE, wiring RS, wiring TX, and wiring WX, etc. Wiring SLR, wiring SLG, and wiring SLB are electrically connected to signal line drive circuit 72. Wiring GL is electrically connected to gate line drive circuit 73. Signal line drive circuit 72 functions as a source line drive circuit (also called a source driver). Gate line drive circuit 73 is sometimes called a gate driver.

[0042] Pixel 80 has sub-pixels 81R, 81G, and 81B, which are sub-pixels having light-emitting devices. For example, sub-pixel 81R is a sub-pixel that emits red light, sub-pixel 81G is a sub-pixel that emits green light, and sub-pixel 81B is a sub-pixel that emits blue light. This allows the display device 10 to display in full color. Although this example shows pixel 80 having three sub-pixels, it may have four or more sub-pixels.

[0043] Sub-pixel 81R has a light-emitting device that emits red light. Sub-pixel 81G has a light-emitting device that emits green light. Sub-pixel 81B has a light-emitting device that emits blue light. Pixel 80 may also have sub-pixels that emit light of other colors. For example, in addition to the three sub-pixels described above, pixel 80 may have a sub-pixel that emits white light, or a sub-pixel that emits yellow light, and so on.

[0044] In this specification, the smallest unit within a single "pixel" that performs independent operations is conveniently defined as a "sub-pixel" for explanation purposes, but a "sub-pixel" may sometimes be referred to simply as a "pixel."

[0045] Wiring GL is electrically connected to sub-pixels 81R, 81G, and 81B which are arranged in the row direction (the direction in which wiring GL extends). Wiring SLR, SLG, and SLB are electrically connected to sub-pixels 81R, 81G, or 81B which are arranged in the column direction (the direction in which wiring SLR, etc. extends), respectively.

[0046] The sub-pixel 82PS of pixel 80 is electrically connected to wiring SE, wiring TX, wiring RS, and wiring WX. Wiring SE is electrically connected to the control line drive circuit 74. Wiring TX is electrically connected to the control line drive circuit 74. Wiring RS is electrically connected to the control line drive circuit 74. Wiring WX is electrically connected to the signal readout circuit 75.

[0047] The control line drive circuit 74 has the function of generating a signal to drive the sub-pixel 82PS and outputting it to the sub-pixel 82PS via wiring SE, wiring TX, and wiring RS. The signal readout circuit 75 has the function of receiving the signal output from the sub-pixel 82PS via wiring WX and outputting it to the correction circuit 20 as touch detection output data or correction output data. The signal readout circuit 75 functions as a circuit that reads out the touch detection output data or correction output data.

[0048] The correction circuit 20 includes a video data correction circuit 21 and a touch detection circuit 22. The correction circuit 20 corrects signals for controlling the display on the display unit 71 based on the video data corrected by the video data correction circuit 21 and the operation determined based on the touch detection output data. The video data corrected by the video data correction circuit 21 is video data obtained by correcting video data input from an external source. The touch detection output data is data input from the signal readout circuit 75. The signals for controlling the display on the display unit 71, corrected by the correction circuit 20, are output to the signal line drive circuit 72, the gate line drive circuit 73, the control line drive circuit 74, and the signal readout circuit 75. In this specification, the video data used to correct the video data may also be referred to as correction video data, and the video data used to perform the display corrected by the correction circuit may also be referred to as display video data.

[0049] The touch detection circuit 22 is a circuit that detects the proximity or contact of an object in accordance with the touch detection output data output by the signal readout circuit 75. The touch detection output data corresponds to a signal obtained by converting the current value of the photocurrent output by the photoreceiving device into a digital signal using an analog-to-digital conversion circuit.

[0050] The video data correction circuit 21 is a circuit that corrects the video data input to the correction circuit 20 according to the correction output data output by the signal readout circuit 75. The correction output data corresponds to a signal obtained by converting the current value of the photocurrent output by the photoreceiving device into a digital signal using an analog-to-digital conversion circuit.

[0051] The memory circuit 23 is a circuit for storing various data, such as a correction table obtained based on the correction output data. For example, the memory circuit 23 can be a flash memory, ferroelectric memory (FeRAM), magnetoresistive memory (MRAM), phase-change memory (PRAM), or resistive random-access memory (ReRAM). Alternatively, a memory having an oxide semiconductor transistor (OS transistor), such as NOSRAM® or DOSRAM®, may be used.

[0052] NOSRAM is a type of gain-cell DRAM in which the memory cell's writing transistors are OS transistors. NOSRAM is an abbreviation for Nonvolatile Oxide Semiconductor RAM. DOSRAM, on the other hand, is a memory device in which the memory cell is a 1T1C (1 transistor 1 capacitance) type cell and the writing transistors are transistors using oxide semiconductors. DOSRAM is an abbreviation for Dynamic Oxide Semiconductor Random Access Memory.

[0053] In one embodiment of the present invention, a correction table can be created to correct video data using correction output data based on the current flowing through the light-receiving device of a sub-pixel provided for each pixel. Therefore, even in display devices with a large number of pixels and high pixel resolution, a configuration can be used to correct variations in the brightness of each pixel. Furthermore, in one embodiment of the present invention, since correction output data obtained by receiving the light emitted by the light-emitting device of the pixel with a light-receiving device is used, it is possible to correct not only post-shipment inspections but also relative brightness variations between pixels caused by post-shipment inspections. Moreover, in one embodiment of the present invention, since each pixel is equipped with a light-receiving device, unlike the operation of capturing images of each pixel with an imaging means such as an external camera, a signal corresponding to the brightness variation of the light-emitting device of each pixel can be output as correction output data without dividing the screen into multiple areas. Therefore, it is possible to measure the relative brightness variation between pixels and create correction data according to that value without increasing the number of imaging cycles.

[0054] <Video data correction method> A method for correcting video data in a display device according to one aspect of the present invention will be described. The video data to be corrected is due to the relative luminance variation that appears when video data of the same grayscale is provided to the light-emitting device of each pixel. Therefore, in order to correct the luminance variation, it is necessary to correct the video data. In order to correct the video data, correction output data corresponding to the luminance when video data is provided to the light-emitting device of each pixel is required. When correcting video data, in addition to a configuration that calculates corrected video data from the correction output data, it is preferable to calculate the corrected video data for each grayscale and store it in the memory circuit as a correction table. With this configuration, the uncorrected video data can be converted to corrected video data in a short period of time.

[0055] Figure 2 is a flowchart illustrating a method for correcting video data in a display device using a correction circuit 20 that includes a video data correction circuit 21.

[0056] The video data correction method includes a step to acquire an offset (step S11). The offset here refers to data corresponding to the current flowing through the light-receiving device of a sub-pixel when the sub-pixel with a light-emitting device is de-illuminated under conditions of low ambient light. The offset is read from the sub-pixel with the light-receiving device by the signal readout circuit 75, output as digital data to the correction circuit 20, and stored in the memory circuit 23. In the following explanation, the offset may be described as the current value flowing through the light-receiving device of the sub-pixel.

[0057] In the video data correction method, a step of acquiring brightness for each gradation is performed (step S12). Brightness acquisition here refers to acquiring data corresponding to the current flowing through the light-receiving device of a sub-pixel that has a light-emitting device when the light-emitting device of the sub-pixel is turned on at any gradation. This data is read out from the sub-pixel with the light-receiving device by the signal readout circuit 75, output as digital data to the correction circuit 20, and can be stored in the memory circuit 23. The data acquired in step S12 can be acquired as a value corrected by the offset obtained in step S11. The data obtained by correcting the data obtained in step S12 with the offset becomes the correction output data. For example, if the number of gradations of a sub-pixel with a light-emitting device is m gradations (1st to mth gradations, where m is an integer of 2 or more), the correction output data will be acquired for each pixel, ranging from the 1st correction output data to the mth correction output data corresponding to the number of gradations. The upper limit of m is less than or equal to N, where N is the maximum number of gradations that the signal line drive circuit 72 can output. The correction output data does not necessarily have to match the number of gradations of the sub-pixel; it may be configured to acquire correction output data corresponding to gradations selected at regular intervals from multiple gradations. In the following explanation, the correction output data may be described as the current value flowing through the light-receiving device of the sub-pixel.

[0058] In the video data correction method, correction output data (first correction output data to the mth correction output data) and video data corresponding to each grayscale (first grayscale to the mth grayscale) (correction video data) are stored in the memory circuit 23, and the relationship between the correction output data and the video data is approximated (fitted) by a quadratic equation (step S13). It is preferable to acquire the brightness for each grayscale in step S12 so that fitting can be performed with good accuracy in step S13. The coefficients of the quadratic equation obtained by fitting are stored in the memory circuit 23. The video data corresponding to each grayscale may be the video voltage applied to the light-emitting device of the sub-pixel. The relationship between the correction output data and the video data may also be approximated by a configuration of multiple linear equations.

[0059] In the video data correction method, a correction table is created in step S14, corresponding to the coefficients of the quadratic equation obtained in step S13 and the correction output data (first correction output data to the mth correction output data). The correction table is a table for correcting video data (display video data), and can convert uncorrected video data into corrected video data. The correction table created in step S14 can store the VT curve, which corresponds the analog voltage output by the gradation voltage generation unit of the signal line drive circuit 72 to each gradation, as a gamma table in the memory circuit 23. The correction table is created for each pixel. As mentioned above, when correcting video data, a configuration in which the corrected video data is calculated from the correction output data is also acceptable. In this case, only the coefficients of the equation obtained by fitting need to be stored in the memory circuit 23, so the storage capacity of the memory circuit 23 that stores the correction table can be reduced.

[0060] <<Getting the Offset>> Next, step S11, which involves obtaining the offset, will be explained using Figures 3 to 5.

[0061] Figures 3A and 3B illustrate the current obtained in the step of acquiring the offset. Data corresponding to the current flowing through the photodetector is D PITherefore, when there is external light as shown in FIG. 3A, D PI is data corresponding to a current corresponding to the influence of external light in addition to the dark current (the current flowing through the light-receiving device when displaying a black level), and thus the offset data D OFFSET is affected by external light. Therefore, when acquiring an offset, it is preferable to perform the acquisition in a state where the influence of external light is small as illustrated in FIG. 3B. By reducing the influence of external light, data D corresponding to fixed noise such as dark current can be obtained OFFSET . Note that the offset is data acquired for each pixel, and different offset data is acquired for each pixel.

[0062] In order to obtain a state with little influence of external light, for example, a configuration in which a reflector is provided so as to cover the display unit is preferable. For example, as illustrated in FIG. 4A, the reflector 12 is provided on the protection unit 11 capable of covering the display surface of the display unit 71 of the display device 10. The reflector 12 can be provided overlapping to cover the display surface of the display unit 71 of the display device 10 by bending the protection unit 11 toward the display unit 71 as illustrated in FIG. 4B. For example, as shown in the schematic cross-sectional view illustrated in FIG. 4C, the reflector 12 can be fixed in a state where the display unit 71 is in contact therewith.

[0063] In the state illustrated in FIG. 4C, a state with little influence of external light can be obtained as illustrated in FIG. 3B. The step of acquiring an offset is, subsequent to step S21 of turning off all pixels as illustrated in FIG. 5, overlapping the reflector 12 on the display unit 71, and in the state where the influence of external light is reduced, D corresponding to the current flowing through the light-receiving device PI is D OFFSET and can be acquired for all pixels (step S22). Note that by adopting a configuration in which D PI is acquired simultaneously from one row of pixels, higher speed can be achieved compared to a configuration in which acquisition is performed one pixel at a time, and noise from a selector or the like when acquiring data row by row can be reduced. Note that by providing the white reflector 12 overlapping the display unit 71, D corresponding to the current flowing through the light-receiving device PIThis configuration allows for minimizing the influence of ambient light when acquiring light, and also enables the reception of reflected light from a light-emitting device by a light-receiving device.

[0064] <<Brightness acquisition for each grayscale level>> Next, using Figures 6A to 7B, we will explain the step of acquiring brightness for each grayscale level at each pixel.

[0065] As explained in Figure 5, the reflector 12 is superimposed on the display unit 71 to determine the D of each pixel. OFFSET Following the acquisition of the above, brightness is acquired for each grayscale. Brightness acquisition for each grayscale is performed by emitting light in a single color from the light-emitting device of each pixel's subpixel, and receiving the light reflected by the reflector, which is then received by the light-receiving device, resulting in data corresponding to the current. PI This process involves acquiring the data.

[0066] For example, as shown in Figure 6A, when video data corresponding to each grayscale level (black level, 1st to mth grayscale levels) is supplied to the light-emitting device, the current flowing through the light-receiving device corresponds to D PI This is obtained.

[0067] D corresponds to the acquisition of brightness for each grayscale, which is equivalent to acquiring brightness for each grayscale. PI The acquisition of the offset (D) in the light-receiving device for each pixel is obtained. OFFSET It is preferable to obtain the value corrected by ). This configuration makes it possible to obtain a correction method for a display device with excellent accuracy. Specifically, for example as shown in Figure 6B, the D of each grayscale PI D corrected by offset PI_1 Even D PI_m The current value corresponding to the grayscale is obtained. Note D PI_1 Even D PI_m This is the data corresponding to the correction output data. D PI_1 Even D PI_m This is the D of each tone. PI And based on the offset, it can be calculated by the correction circuit 20.

[0068] Note that D was acquired PIWhen correcting this, it may be necessary to subtract not only the offset data but also the drive noise generated when the display unit is running. Reducing the refresh rate of the display unit to around 1Hz may also be necessary. PI A configuration that acquires this is preferable because it can reduce the influence of the driving noise. When reducing the refresh rate of the display, it is preferable to use a configuration in which transistors with a small off-current, such as a transistor having an oxide semiconductor in the channel formation region, are used as the transistors in the sub-pixels.

[0069] Figure 7A shows a flowchart illustrating the steps for acquiring brightness for each grayscale level at each pixel, including the operations described in Figures 6A and 6B above. Figure 7B is a schematic cross-sectional view of the display device to illustrate the operations in each flow shown in Figure 7A.

[0070] Step S31 causes the light-emitting devices of all subpixels to emit light in a single color and in m-level grayscale. In other words, in the configuration of Figure 1, the light-emitting device of any one of the subpixels 81R, 81G, and 81B emits light with video data corresponding to m-level grayscale. Figure 7B illustrates how the signal line drive circuit 72 generates a video voltage according to the video data output by the correction circuit 20, and how the light-emitting device of the subpixel 81R of the display unit 71 emits light according to this voltage (thick arrow in the figure). The light from the light-emitting device is reflected by the reflector 12, and the reflected light (dotted arrow in the figure) is incident on the light-receiving device of the subpixel 82PS. If multiple subpixels with light-receiving devices are provided within a single pixel, corresponding to the light emission of each color light-emitting device, the single-color emission in step S31 may be performed simultaneously by the multiple color light-emitting devices.

[0071] When light enters the light-receiving device of each pixel, current flows through the light-receiving device of the sub-pixel 82PS. This current is output as a digital signal to the correction circuit 20 via the circuit within the sub-pixel 82PS and the signal readout circuit 75, and D corresponds to the brightness of each grayscale. PI_1 Even D PI_mThis is obtained as (step S32). In other words, in the configuration shown in Figure 1, the light receiving device of the sub-pixel 82PS receives light corresponding to the m-level grayscale, and data corresponding to the current corresponding to the received light is obtained.

[0072] D obtained in step S32 PI In the correction circuit 20, D OFFSET The correction is applied, and the correction output data is D PI_1 Even D PI_m The data is acquired (step S33). The correction output data is stored in the memory circuit 23 along with the video data corresponding to the gradation.

[0073] In step S13, the fitting operation determines whether the emission of light at the required gradation has been completed (step S34). This determination is made based on N D values, where N is the total number of gradations. PI It is not necessary to obtain the coefficients of the quadratic equation obtained through fitting. Alternatively, you can set the required gradations as values, or you can determine this by changing the gradations (increasing m) until the evaluation value of the fitting (a value equivalent to the error) falls below a certain value. D for all gradations PI It is not necessary to acquire the D corresponding to the light emission based on the video data on the higher gradation side. PI The system can be configured to acquire data by thinning it out. This configuration allows the correction operation of the display device to be performed in a short period of time.

[0074] <<Fitting>> Next, using Figures 8A and 8B, D corresponding to the correction output data PI And video data corresponding to each grayscale (D DATA ) and are stored in memory circuit 23, D PI and D DATA This section explains the step of approximating (fitting) the relationship with a quadratic equation.

[0075] Figure 8A shows the flow chart for performing the fitting, and Figure 8B shows a schematic diagram of the quadratic equation used to calculate the coefficients during fitting.

[0076] D corresponding to the brightness of the light-emitting device for each pixel PI and the corresponding video data (D DATA ) is read from the memory circuit 23 to the correction circuit 20 (step S41). Then D PI D corresponding to DATA Based on this, calculate the coefficients that can be approximated as a quadratic equation (step S42). The vertical axis is D PI Let the horizontal axis be D DATA Thus, the quadratic equation can be expressed as equation (1). The coefficients to be calculated are α and β in equation (1). α and β are coefficients that take different values ​​for each pixel.

[0077]

number

[0078] D shown in formula (1) PI These are the coefficients α and β, as well as the video data (D DATA It can be expressed as ). Formula (1) is D DATA By solving for D, DATA As shown in equation (2), the coefficients are α, β, and D. PI It can be expressed as follows.

[0079]

number

[0080] D PI Since this is data that depends on the brightness of the light-emitting device, D PI By setting this, it is possible to estimate the video data required to obtain the same brightness for light-emitting devices with different characteristics. Note that the video data (D DATA Since the video voltage output by the signal line drive circuit 72 corresponding to the digital data is also corrected, variations in the brightness of the light-emitting device to which the video voltage is supplied can also be corrected.

[0081] Figure 8B shows D in an arbitrary subpixel 81. DATA , DPI A schematic diagram of a quadratic equation representing the relationship is shown. For example, as shown in Figure 8B, (D PI_1 ,D DATA_1 ), (D PI_5 ,D DATA_5 As shown above, based on the multiple coordinate points obtained in the previous step, D DATA -D PI It can be fitted to a curve represented by a quadratic equation in coordinates. As can be seen from the schematic diagram of the quadratic equation, the value (D) corresponds to the brightness of the light-emitting device. PI ) From, video data D DATA_1 Even D DATA_n (where n is the maximum number of grayscale levels in the video data) can be calculated. The video data has a value corresponding to the brightness (D PI Since it is corrected based on ), corrected video data can be obtained. In Figure 8B, a configuration is shown in which a curve represented by a quadratic equation is fitted based on multiple coordinates, but other configurations are also possible. For example, D DATA -D PI The relationship can also be approximated by multiple linear equations.

[0082] <<Creating a Correction Table>> Next, the steps for creating a correction table will be explained using Figures 9A and 9B.

[0083] Figure 9A illustrates the flow for creating a correction table, and Figure 9B illustrates a schematic diagram to explain the correction of video voltage in sub-pixels A to C (sub-pixels A to C are sub-pixels of different pixels exhibiting the same color) with variations in brightness.

[0084] The correction circuit 20 stores the coefficients α and β of equations (1) and (2) obtained by fitting in the memory circuit 23 (step S51). Next, D according to the brightness of the light-emitting device of each subpixel. PI From the value of and the coefficient of each pixel, the D required for each tone is calculated. DATA The values ​​are calculated and a correction table for each pixel is created (step S52). Then, the created correction table is stored in the memory circuit 23 (step S53).

[0085] Figure 9B is a schematic diagram illustrating how video data can be corrected to achieve similar brightness levels in sub-pixels A to C, which exhibit the same color but have variations in the characteristics of the light-emitting devices. In order to reduce the variation in brightness of the light-emitting devices in sub-pixels A to C, D is used according to the brightness of the light-emitting devices. PI You can correct the video data corresponding to the same grayscale so that the values ​​are the same.

[0086] For example, in Figure 9B, D in subpixel B PI Value PI_X Video data D representing the corresponding grayscale X DATA D DATA_X A correction table is created to produce video data that is as follows. Also, D in subpixel A of another pixel PI Value PI_X Video data D representing the corresponding grayscale X DATA D DATA_X A correction table is created to create video data with +ΔD. Also, D in a sub-pixel C of another pixel. PI Value PI_X Video data D representing grayscale X, corresponding to the corresponding grayscale X. DATA D DATA_X Create a correction table to generate video data with a -ΔD value.

[0087] In this way, by creating a correction table that corrects video data representing the same gradation for each pixel to become video data representing the same brightness, it is possible to correct variations in brightness of each pixel even in display devices with a large number of pixels and high pixel resolution. Furthermore, in one embodiment of the present invention, since correction output data obtained by receiving the light emitted by the light-emitting device of the pixel with a light-receiving device is used, it is possible to correct not only post-shipment inspections but also relative brightness variations between pixels caused by post-shipment inspections. In addition, in one embodiment of the present invention, since each pixel is equipped with a light-receiving device, unlike the operation of imaging each pixel without dividing the screen into multiple areas, it is possible to output a signal corresponding to the brightness variation of the light-emitting device of each pixel as correction output data without scanning an external camera. Therefore, it is possible to measure the relative brightness variation between pixels and create correction data according to that value without increasing the number of imaging cycles.

[0088] The correction table created can store in the memory circuit 23 as a gamma table the VT curves that correspond the analog voltage output by the gradation voltage generation unit of the signal line drive circuit 72 to each gradation.

[0089] <Example of pixel circuit configuration> Examples of pixel circuit diagrams applicable to sub-pixels 81R, 81G, and 81B are shown in Figures 10A to 10D and 11A to 11D.

[0090] The pixel circuit 81_1 shown in Figure 10A illustrates transistors 55A and 55B, and capacitor 56. Figure 10A also illustrates the light-emitting device 61 connected to the pixel circuit 81_1. Furthermore, Figure 10A illustrates wiring SL, GL, ANO, and VCOM.

[0091] Transistor 55A's gate is electrically connected to wiring GL, and one of its source and drain is electrically connected to wiring SL, the other of which is connected to the gate of transistor 55B and one of the electrodes of capacitor 56. Transistor 55B's source and drain are electrically connected to wiring ANO, and the other of which is connected to the anode of light-emitting device 61. Capacitor 56's other electrode is electrically connected to the anode of light-emitting device 61. Light-emitting device 61's cathode is electrically connected to wiring VCOM.

[0092] Transistor 55A functions as a switch. Transistor 55B functions as a transistor for controlling the current flowing to the light-emitting device 61.

[0093] Here, it is preferable to use transistors having silicon in the channel formation region (hereinafter referred to as Si transistors) for transistors 55A and 55B. Alternatively, it is preferable to use a transistor having a metal oxide (also called an oxide semiconductor) in the channel formation region (hereinafter referred to as an OS transistor) for transistor 55A and a Si transistor for transistor 55B.

[0094] Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. Si transistors have high field-effect mobility and good frequency characteristics. For example, transistors having low-temperature polysilicon (LTPS) in the channel formation region (hereinafter referred to as LTPS transistors) can be used.

[0095] By using Si transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0096] The oxide semiconductor preferably comprises, for example, indium, a metal M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more selected from aluminum, gallium, yttrium, and tin. In particular, it is preferable to use an oxide containing indium, gallium, and zinc (also written as IGZO) as the semiconductor layer of an OS transistor. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc.

[0097] OS transistors, which use oxide semiconductors that have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge stored in the capacitor connected in series with the OS transistor to be retained for extended periods. For this reason, it is preferable to use an OS transistor for the transistor 55A connected in series with the capacitor 56. By using an OS transistor as transistor 55A, it is possible to prevent the charge held in the capacitor 56 from leaking through the transistor 55A. Furthermore, because the charge held in the capacitor 56 can be retained for extended periods, it becomes possible to display still images for extended periods without rewriting the data in the pixel circuit 81_1.

[0098] Furthermore, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0099] For example, by using both LTPS transistors and OS transistors in transistors 55A and 55B, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In a more preferable example, it is preferable to apply OS transistors to transistors that function as switches to control conduction and non-conduction between wires, and LTPS transistors to transistors that control current.

[0100] The light-emitting device 61 has a function of emitting light (hereinafter also referred to as the light-emitting function). Preferably, the light-emitting device 61 is an organic EL device (organic electroluminescent device).

[0101] The pixel circuit 81_2 shown in Figure 10B is configured by adding transistor 55C to the pixel circuit 81_1. Furthermore, a wiring V0 that provides a constant potential is electrically connected to the pixel circuit 81_2.

[0102] The pixel circuit 81_3 shown in Figure 10C is an example where transistors 55A and 55B of the pixel circuit 81_3 are replaced with transistors having a pair of gates. Similarly, the pixel circuit 81_4 shown in Figure 10D is an example where the same transistors are replaced with those in pixel circuit 81_2. Note that while transistors having a pair of gates were used in all cases here, this is not the only option.

[0103] In a transistor having a pair of gates, configuring the pair of gates to be electrically connected to each other and given the same potential offers advantages such as increased on-current and improved saturation characteristics. Alternatively, one of the pair of gates may be given a potential that controls the transistor's threshold voltage. Furthermore, providing a constant potential to one of the pair of gates can improve the stability of the transistor's electrical characteristics. For example, one of the transistor's gates may be electrically connected to a wiring to which a constant potential is provided, or it may be electrically connected to its own source or drain.

[0104] The pixel circuit 81_5 shown in Figure 11A is configured by adding a transistor 55D to the above-mentioned pixel circuit 81_2. In addition, three wires (wires GL1, GL2, and GL3) that function as gate wires are electrically connected to the pixel circuit 81_5.

[0105] Transistor 55D has its gate electrically connected to wiring GL3, and one of its source and drain is electrically connected to the gate of transistor 55B, while the other is electrically connected to wiring V0. Also, the gate of transistor 55A is electrically connected to wiring GL1, and the gate of transistor 55C is electrically connected to wiring GL2.

[0106] By simultaneously making transistors 55C and 55D conduct, the source and gate of transistor 55B become at the same potential, making transistor 55B non-conductive. This allows the current flowing to the light-emitting device 61 to be forcibly interrupted. Such a pixel circuit is suitable for display methods that alternate between display periods and off periods.

[0107] The pixel circuit 81_6 shown in Figure 11B is an example in which a capacitor 56A is added to the above pixel circuit 81_5. The capacitor 56A functions as a holding capacitor.

[0108] The pixel circuit 81_7 shown in Figure 11C is an example where a transistor with a pair of gates is applied to the pixel circuit 81_5. Similarly, the pixel circuit 81_8 shown in Figure 11D is an example where a transistor with a pair of gates is applied to the pixel circuit 81_6. Transistors 55A, 55C, and 55D are transistors with a pair of gates electrically connected, while transistor 55B is a transistor in which one of the gates is electrically connected to the source.

[0109] Next, Figures 12A to 12F show examples of circuit diagrams for a pixel circuit that can be applied to the sub-pixel 82PS. In addition to wiring SE and wiring WX, wiring RS and wiring TX are also shown in Figures 12A to 12F. For example, wiring SE is a wiring that transmits a selection signal for reading data from the pixel circuit. For example, wiring RS is a wiring that transmits a reset signal for initializing the pixel circuit. For example, wiring WX is a wiring that transmits a signal read from the pixel circuit. For example, wiring TX is a wiring that transmits a transfer signal to control the current flowing to the photoreceiving device 62. Furthermore, the pixel circuit that can be applied to the sub-pixel 82PS is connected to the wiring that transmits a constant potential.

[0110] The pixel circuit 82_1 shown in Figure 12A has transistors 57A, 57B, 57C and a capacitor 58, and the transistors and capacitor are connected as shown in Figure 12A. Figure 12A also shows a light-receiving device 62 connected to the pixel circuit 82_1.

[0111] The pixel circuit 82_2 shown in Figure 12B is a configuration in which transistor 57B in the pixel circuit 82_1 is replaced with a transistor having a pair of gates. The pixel circuit 82_3 shown in Figure 12C is an example in which transistors 57A to 57C in the pixel circuit 82_2 are replaced with transistors having a pair of gates. Furthermore, the pixel circuit 82_4 shown in Figure 12D is an example in which the arrangement of transistor 57C is changed. Furthermore, the pixel circuit 82_5 shown in Figure 12E is an example in which transistor 57D is added.

[0112] The pixel circuit 82_6 shown in Figure 12F is an example in which transistors 57D and 57E are added, and the position of capacitor 58 is placed between transistors 57D and 57B. In the pixel circuit 82_6 shown in Figure 12F, wirings RS1 and RS2, which function as wiring RS, are provided, and transistors 57A and 57E are controlled at different timings. With this configuration, different voltages can be applied across capacitor 58, and the output based on the photocurrent flowing through the photoreceiving device can be level-shifted.

[0113] As described above, one aspect of the present invention, a display device and correction method, can create a correction table for correcting video data using correction output data based on the current flowing through the light-receiving devices of sub-pixels, each of which has a light-receiving device. Therefore, even in display devices with a large number of pixels and high pixel resolution, it is possible to correct variations in the brightness of each pixel. Furthermore, since one aspect of the present invention, a display device and correction method, uses correction output data obtained by receiving the light emitted by the light-emitting device of a pixel with a light-receiving device, it can correct not only post-shipment inspections but also relative brightness variations between pixels caused by post-shipment inspections. Moreover, since one aspect of the present invention, a display device and correction method, has a configuration in which each pixel is equipped with a light-receiving device, unlike the operation of imaging each pixel without dividing the screen into multiple areas, it can output a signal corresponding to the brightness variation of the light-emitting device of each pixel as correction output data without scanning an external camera. Therefore, it is possible to measure the relative brightness variation between pixels and create correction data according to that value without increasing the number of imaging cycles.

[0114] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0115] (Embodiment 2) This embodiment describes a configuration different from the correction method described in Embodiment 1 above. In this embodiment, any explanations that overlap with those in Embodiment 1 will be based on the explanation in Embodiment 1 and omitted.

[0116] <Video data correction method> Figures 13 to 19B illustrate a method for correcting video data in the display device shown in Figure 1, etc. Figure 13 is a flowchart illustrating a method for correcting video data in a display device using a correction circuit 20 having a video data correction circuit 21.

[0117] The video data correction method includes a step to acquire an offset (step S61). The offset here refers to data corresponding to the current flowing through the light-receiving device of a sub-pixel when the sub-pixel having a light-emitting device is in a non-illuminated state under conditions of low ambient light. In this embodiment, the offset is acquired with the voltage of each wiring connected to the sub-pixel adjusted so that all pixels are displayed in black. The offset is read from the sub-pixel having a light-receiving device by the signal readout circuit 75, output as digital data to the correction circuit 20, and can be stored in the memory circuit 23. In the following description, the offset may be described as the current value flowing through the light-receiving device of the sub-pixel.

[0118] In the video data correction method, a step is performed to acquire the maximum luminance of each pixel (step S62). Acquiring the maximum luminance here means acquiring data corresponding to the current flowing through the light-receiving device of a sub-pixel when video data to emit light at the highest luminance is supplied to the light-emitting device of the sub-pixel. This data is read out from the sub-pixel having a light-receiving device by the signal readout circuit 75, output as digital data to the correction circuit 20, and can be stored in the memory circuit 23. The data acquired in step S62 can be acquired as a value corrected by the offset obtained in step S61.

[0119] In the video data correction method, a step of acquiring luminance for each gradation is performed (step S63). The luminance acquisition herein refers to acquiring data corresponding to a current flowing through a light-receiving device included in a sub-pixel when the light-emitting device of the sub-pixel having the light-emitting device is turned on at an arbitrary gradation. The data is read out from the sub-pixel having the light-receiving device by a signal readout circuit 75, output as digital data to a correction circuit 20, and can be held in a storage circuit 23. The data acquired in step S63 can be acquired as a value corrected by the offset obtained in step S61. Data obtained by correcting the data obtained in step S63 with the offset serves as correction output data. For the correction output data, if the number of gradations of a sub-pixel having a light-emitting device is N gradations (referred to as maximum gradation N), first to N-th correction output data corresponding to the number of gradations are acquired for each pixel. That is, in each pixel, correction output data corresponding to all gradations is acquired.

[0120] In the video data correction method, correction video data (D PI ) corresponding to each gradation is determined (step S64). The correction video data (D PI ) is illustrated as gradation vs D PI in the drawing. With D PI corresponding to a gradation determined, video data (correction video data) corresponding to the data corresponding to the current flowing through the light-receiving device in each pixel is determined. The correction video data (D PI ) corresponding to each gradation is stored in the storage circuit 23. When determining D PI corresponding to a gradation in each pixel, the determination is performed based on a value obtained by dividing D PI corresponding to the luminance of the maximum gradation acquired in step S62 by the number of gradations.

[0121] In the video data correction method, D PI corresponding to the gradation obtained in step S64 and D PI obtained for each pixel, from the video data corresponding to D PIA correction table is created accordingly (step S65). The correction table is a table for correcting video data (video data for display), and can convert uncorrected video data into corrected video data. A correction table is created for each pixel.

[0122] <<Getting the Offset>> Next, step S61, which involves obtaining the offset, will be explained using Figure 14. Figure 14 is a flowchart illustrating the details of step S61, which involves obtaining the offset.

[0123] In step S61, the step of acquiring the offset, each voltage is adjusted so that all pixels are displayed in black (step S71). The adjustment of each voltage is performed by lowering the video voltage output by the gradation voltage generation unit of the signal line driving circuit 72 so that the current flowing between the anode and cathode of the light-emitting device of the sub-pixel becomes zero. Alternatively, the video voltage may be lowered using a luminance meter until the luminance reaches the lower limit of measurement. Alternatively, the reference voltage supplied to the sub-pixel may be adjusted so that the current flowing between the anode and cathode of the light-emitting device of the sub-pixel becomes zero.

[0124] Step S71 involves adjusting each voltage so that all pixels display black, followed by turning off all pixels (Step S72).

[0125] Following step S72, in which all pixels are turned off, the reflector 12 is placed on the display unit 71 to reduce the influence of ambient light, and D is set according to the current flowing through the light receiving device. PI D OFFSET The image is then acquired for all pixels (step S73).

[0126] In step S61, to obtain a state where the influence of ambient light is small, it is preferable to provide a reflector so as to cover the display unit, as described in Figures 4A to 4C of Embodiment 1 above. This configuration allows for a correction method for the display device that enables more accurate correction of video data.

[0127] <<Acquisition of maximum gradation brightness>> Next, step S62, in which the brightness of the maximum gradation is acquired for each pixel, will be explained using Figures 15A and 15B.

[0128] The acquisition of maximum gradation brightness involves supplying the light-emitting device of each pixel's subpixel with maximum gradation video data to cause it to emit light in a single color, and then receiving the light reflected by the reflector with a light-receiving device to acquire data corresponding to the current flowing. Even during this operation, the reflector 12 is placed on the display unit 71 to acquire maximum gradation brightness.

[0129] For example, when video data corresponding to the maximum gradation (the total number of gradations when the number of gradations is N; also called maximum gradation N) is supplied to a light-emitting device, the current flowing through the light-receiving device corresponds to D PI D PI_N It is obtained as follows: D corresponding to the brightness of the maximum gradation, which corresponds to obtaining the brightness of the maximum gradation. PI The acquisition of the offset (D) in the light-receiving device for each pixel is obtained. OFFSET The value corrected by ) is D PI_N It is preferable to obtain it as follows. By adopting this configuration, a correction method for a display device with excellent accuracy can be obtained. Specifically, for example as shown in Figure 15A, the D of each grayscale PI D corrected by offset PI_N This data is obtained by acquiring the brightness at the maximum grayscale level.

[0130] Note that D was acquired PI_N When correcting this, it may be necessary to subtract not only the offset data but also the drive noise generated when the display unit is running. Reducing the refresh rate of the display unit to around 1Hz may also be necessary. PI A configuration that acquires this is preferable because it can reduce the influence of the driving noise. When reducing the refresh rate of the display, it is preferable to use a configuration in which transistors with a small off-current, such as a transistor having an oxide semiconductor in the channel formation region, are used as the transistors in the sub-pixels.

[0131] Figure 15B shows a flowchart illustrating the step of acquiring the maximum luminance for each pixel, as described in Figure 15A above.

[0132] The light-emitting devices of all sub-pixels 81R (or 81G or 81B; also called sub-pixel 81) emit light in a single color and at maximum gradation, and as light enters the light-receiving device of each pixel, current flows to the light-receiving device of the sub-pixel 82PS. This current is output as a digital signal to the correction circuit 20 via the circuit in the sub-pixel 82PS and the signal readout circuit 75, and D corresponds to the brightness of the maximum gradation. PI_N This is obtained (step S81). In the configuration shown in Figure 1, the light-emitting device of any one of the sub-pixels 81R, 81G, and 81B is made to emit light with video data corresponding to the maximum grayscale. Note that if a single pixel has multiple sub-pixels, each having a light-receiving device, the single-color emission in step S81 may be performed simultaneously by multiple color light-emitting devices.

[0133] D obtained in step S81 PI_N This is obtained at each subpixel. D PI_N Compare, D PI_N The smallest subpixel D PI_N The value of D PI_MIN This is stored in the memory circuit 23 (step S82).

[0134] <<Brightness acquisition for each grayscale level>> Next, using Figure 16, we will explain step S63, in which brightness is acquired for each grayscale level at each pixel.

[0135] The luminance acquisition for each gradation performed in step S63 involves providing the light-emitting device of each pixel's subpixel with video data of an arbitrary gradation to cause it to emit light in a single color. The light reflected by the reflector is received by a light-receiving device, which acquires data corresponding to the current flowing through the device, thereby acquiring correction output data that corresponds to all gradations. During this operation, the reflector 12 is also placed on the display unit 71 to acquire luminance for any desired gradation.

[0136] Figure 16 shows a flowchart illustrating the steps involved in acquiring brightness for each grayscale at each pixel, which is necessary for obtaining correction output data that corresponds to all grayscale levels.

[0137] The light-emitting devices of all subpixels are made to emit light in monochromatic and m-level (step S91). If a single pixel has multiple subpixels, each having a light-receiving device, the monochromatic emission in step S91 may be performed simultaneously by the multiple color light-emitting devices.

[0138] When light enters the light-receiving device of each pixel, current flows through the light-receiving device of the sub-pixel 82PS. This current is output as a digital signal to the correction circuit 20 via the circuit within the sub-pixel 82PS and the signal readout circuit 75, and D corresponds to the brightness of each grayscale. PI It is obtained as (step S92).

[0139] D obtained in step S92 PI In the correction circuit 20, D OFFSET The correction is performed and correction output data is acquired (step S93). The correction output data is stored in the memory circuit 23 along with video data corresponding to the grayscale.

[0140] A determination is made as to whether or not light emission in all gradations has finished (step S94). With this configuration, video data information corresponding to the brightness obtained by the light receiving device is acquired for each pixel. Note that the D acquired in step S92 PI This may be configured to acquire the signal in accordance with the video voltage output by the signal line drive circuit 72. This configuration allows for accurate correction of variations in the brightness of the light-emitting device.

[0141] The acquisition of the maximum luminance may be performed during the luminance acquisition step for each gradation. For example, the luminance for each gradation can be acquired in ascending order, and the luminance corresponding to the maximum gradation can be acquired last. This configuration eliminates the need to repeatedly acquire the luminance corresponding to the maximum gradation.

[0142] <<D corresponding to gradation PI The decision >> Next, using Figures 17, 18A, and 18B, the D corresponding to the grayscale is shown. PI Step S64, in which the decision is made, will be described.

[0143] Figure 17 shows D corresponding to grayscale. PI This shows the flow for making the decision.

[0144] In step S62, the D value of the sub-pixel 81, which has low brightness at the maximum grayscale, was obtained. PI (D PI_MIN Divide ) by N (where N is the number corresponding to the maximum number of gradations), and D corresponding to each gradation. PI Determine the D corresponding to each grayscale, using the sub-pixel 81 with the lowest brightness in the display unit as the reference. PI This will determine the brightness of the subpixels. With this configuration, it is possible to correct the brightness variations of other subpixels by using the subpixels with low brightness as a reference. D corresponding to the gradation PI This is stored in the memory circuit 23 (step S102).

[0145] Furthermore, Figure 18A shows the D in sub-pixel 81, which has low brightness at maximum grayscale, obtained from the flow in Figure 17. DATA_N , D PI_MIN A schematic diagram of the graph showing the relationship between D is shown in Figure 18A. PI_MIN and the corresponding video data D DATA_N And then, D PI and D DATA This can represent a correspondence with [the given statement].

[0146] Figure 18B is D PI_MIN Based on the D scale, the corresponding tones are PI This is a diagram. As shown in Figure 18B, D PI_N D corresponds to the maximum gradation brightness of the smallest sub-pixel. PI_MIN This is D divided by its maximum grayscale value N. PI_MIN / N can represent one level of grayscale. Based on the magnitude of that one level of grayscale, D is calculated according to the level of grayscale. PIIt is possible to determine D, for example, which represents grayscale level 1. PI D PI_MIN It can be represented as / N, and D represents grayscale level 2. PI is 2D PI_MIN It can be represented as / N. And the size from black (0) to N is D PI_MIN It can be represented as follows: D of a subpixel with low brightness PI D according to the gradation of all other subpixels PI As it serves as the standard, D serves as the standard for correcting variations in brightness. PI It can be done this way.

[0147] Note that in the explanation of Figures 17, 18A, and 18B, D PI_N D corresponds to the maximum gradation brightness of the smallest sub-pixel. PI_MIN In contrast, D according to the gradation PI To find this, simply use the number of grayscale levels N and D PI_MIN Although a configuration in which a unit is divided to obtain the size of one tone has been described, the present invention is not limited to this. For example, D representing tone 1 PI D PI_MIN It is also possible to configure it to be set to an arbitrary value, such as a value greater than / N.

[0148] <<Creating a Correction Table>> Next, the steps for creating a correction table will be explained using Figures 19A and 19B.

[0149] Figure 19A illustrates the flow for creating a correction table, and Figure 19B illustrates a schematic diagram to explain the correction of video data at an arbitrary subpixel.

[0150] The correction circuit 20 adjusts the D corresponding to each grayscale at each pixel. PI The closest value to it is D DATA The system searches for the data and generates a correction table (step S111). Then, the created correction table is stored in the memory circuit 23 (step S112).

[0151] In step S111, D corresponds to each grayscale. PID corresponds to the gradation. PI It is based on the value obtained in the decision. In other words, D corresponding to each grayscale. PI This corresponds to a value normalized by dividing the brightness of the maximum gradation of a low-brightness sub-pixel by the number of gradations. D corresponds to all gradations in each sub-pixel. PI Since it has also been acquired, it is a standardized D corresponding to grayscale. PI Based on this, the video data to be applied to each sub-pixel can be searched, and a correction table can be created to correct variations in the brightness of each pixel.

[0152] Figure 19B shows the maximum luminance (D) of a subpixel with low brightness. PI_MIN By dividing ) by the number of gradations N, the corresponding D is obtained. PI D standardized as PI And the standardized D PI This diagram illustrates the correction of video data at an arbitrary subpixel, based on the video data being corrected.

[0153] In Figure 19B, for example, normalized D PI Therefore, D to represent gradation 1 PI is D PI_MIN / N, D to represent gradation 2 PI is D PI_MIN 2D increased by / N PI_MIN Let / N represent the maximum grayscale, and D represents the maximum grayscale. PI is D PI_MIN Let's assume that for any corresponding pixel, D corresponds to the maximum tone n (=N). PI D PI_n , as corresponding video data D DATA_n While these options are available, the video data to be corrected is standardized D PI This is used as the standard. For example, grayscale 1 is D PI is D PI_MIN Video data D based on / N DATA_A And grayscale 2 is D PI 2D PI_MIN Video data D based on / N DATA_B And gradation N-2 is D PI (N-2)D PI_MINVideo data D based on / N DATA_C And gradation N-1 is D PI (N-1)D PI_MIN Video data D based on / N DATA_D And the grayscale N is D PI is D PI_MIN Based on video data D DATA_E Let's assume that.

[0154] In this way, a correction table can be created that corrects video data representing the same gradation for each pixel so that it becomes video data representing the same brightness.

[0155] As described above, one aspect of the present invention, a display device and correction method, can create a correction table for correcting video data using correction output data based on the current flowing through the light-receiving devices of sub-pixels, each of which has a light-receiving device. Therefore, even in display devices with a large number of pixels and high pixel resolution, it is possible to correct variations in the brightness of each pixel. Furthermore, since one aspect of the present invention, a display device and correction method, uses correction output data obtained by receiving the light emitted by the light-emitting device of a pixel with a light-receiving device, it can correct not only post-shipment inspections but also relative brightness variations between pixels caused by post-shipment inspections. Moreover, since one aspect of the present invention, a display device and correction method, has a configuration in which each pixel is equipped with a light-receiving device, unlike the operation of imaging each pixel without dividing the screen into multiple areas, it can output a signal corresponding to the brightness variation of the light-emitting device of each pixel as correction output data without scanning an external camera. Therefore, it is possible to measure the relative brightness variation between pixels and create correction data according to that value without increasing the number of imaging cycles.

[0156] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0157] (Embodiment 3) This embodiment describes the usage modes of a display device having the light-emitting device and light-receiving device described in the above embodiment.

[0158] A schematic diagram of a display device according to one embodiment of the present invention is shown in Figure 20A. The display device 200 shown in Figure 20A includes a substrate 201, a substrate 202, a light-emitting device 211R, a light-emitting device 211G, a light-emitting device 211B, a light-receiving device 212PS, and a functional layer 203, etc.

[0159] Light-emitting devices 211R, 211G, 211B, and light-receiving device 212PS are provided between substrate 201 and substrate 202. Light-emitting devices 211R, 211G, and 211B emit red (R), green (G), or blue (B) light, respectively. Light-emitting devices 211R, 211G, and 211B can be the aforementioned light-emitting devices. Light-receiving device 212PS can be the aforementioned light-receiving device. In the following, when there is no particular distinction between light-emitting devices 211R, 211G, and 211B, they may be referred to simply as light-emitting device 211.

[0160] Figure 20A shows a finger 220 touching the surface of the substrate 202. A portion of the light emitted by the light-emitting device (e.g., light-emitting device 211G) is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving device 212PS, allowing detection that the finger 220 has touched the substrate 202. In other words, the display device 200 can function as a touch panel.

[0161] The functional layer 203 includes circuits for driving the light-emitting devices 211R, 211G, and 211B, and a circuit for driving the light-receiving device 212PS. The functional layer 203 is provided with switches, transistors, capacitors, wiring, etc. However, when the light-emitting devices 211R, 211G, 211B, and the light-receiving device 212PS are driven in a passive matrix manner, the configuration may be made without switches and transistors.

[0162] The display device 200 can, for example, detect the fingerprint of a finger 220. Figure 20B schematically shows an enlarged view of the contact area between the substrate 202 and the finger 220. Figure 20B also shows alternatingly arranged light-emitting devices 211 and light-receiving devices 212.

[0163] Fingerprints are formed on finger 220 by recesses and protrusions. Therefore, as shown in Figure 20B, the protrusions of the fingerprints are in contact with the substrate 202.

[0164] Light reflected from a surface or interface can be either specular or diffuse. Specularly reflected light is highly directional, with the angle of incidence and the angle of reflection being the same, while diffusely reflected light is less directional, with low angular dependence of intensity. The light reflected from the surface of finger 220 is predominantly diffuse. On the other hand, the light reflected from the interface between substrate 202 and the atmosphere is predominantly specular.

[0165] The intensity of light reflected from the contact or non-contact surfaces of the finger 220 and the substrate 202, and incident on the light-receiving device 212 located directly beneath them, is the sum of specularly reflected and diffusely reflected light. As described above, in the recessed areas of the finger 220, the substrate 202 and the finger 220 do not come into contact, so specularly reflected light (indicated by the solid arrow) is dominant, while in the convex areas, they come into contact, so diffusely reflected light from the finger 220 (indicated by the dashed arrow) is dominant. Therefore, the intensity of light received by the light-receiving device 212 located directly beneath the recessed areas is higher than that received by the light-receiving device 212 located directly beneath the convex areas. This allows for imaging of the fingerprint of the finger 220.

[0166] The spacing between the light-receiving devices 212 is set to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between an adjacent recess and a protrusion, thereby enabling the acquisition of a clear fingerprint image. Since the distance between recesses and protrusions in a human fingerprint is approximately 200 μm, for example, the spacing between the light-receiving devices 212 is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0167] Figure 20C shows an example of a fingerprint image captured by the display device 200. In Figure 20C, the outline of the finger 220 is shown with a dashed line and the outline of the contact area 224 is shown with a dashed line within the imaging range 227. Within the contact area 224, a high-contrast fingerprint 222 can be captured due to the difference in the amount of light incident on the light receiving device 212.

[0168] The display device 200 can also function as a touch panel or a pen tablet. Figure 20D shows the tip of the stylus 229 being slid in the direction of the dashed arrow while in contact with the substrate 202.

[0169] As shown in Figure 20D, diffusely reflected light diffused at the contact surface between the tip of the stylus 229 and the substrate 202 is incident on the light-receiving device 212 located in the area overlapping with the contact surface, thereby enabling high-precision detection of the position of the tip of the stylus 229.

[0170] Figure 20E shows an example of the trajectory 226 of the stylus 229 detected by the display device 200. Because the display device 200 can detect the position of the object to be detected, such as the stylus 229, with high positional accuracy, it is possible to perform high-resolution drawing in drawing applications, etc. Furthermore, unlike when using capacitive touch sensors or electromagnetic induction type touch pens, it is possible to detect the position of the object to be detected even if it has high insulating properties, so the material of the tip of the stylus 229 is not a concern, and various writing instruments (e.g., brushes, glass pens, quill pens) can be used.

[0171] The light-receiving device 212PS can be used in touch sensors (also called direct touch sensors) or near-touch sensors (also called hover sensors, hover-touch sensors, non-contact sensors, or touchless sensors). Figure 21 shows how light 191 emitted from a light-emitting device (e.g., light-emitting device 211G) is reflected by an object (e.g., a finger 220), and the reflected light 192 is incident on the light-receiving device 212PS. Although the object is not in contact with the display device 200, the object can be detected using the light-receiving device 212PS. The wavelength of light to be detected by the light-receiving device 212PS may be appropriately determined depending on the application.

[0172] Touch sensors or near-touch sensors can detect the proximity or contact of an object (such as a finger, hand, or pen). Touch sensors can detect an object when the display device and the object are in direct contact. Near-touch sensors can detect an object even if the object does not touch the display device. For example, it is preferable that the display device can detect an object when the distance between the display device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. This configuration makes it possible to operate the display device without the object directly touching it, in other words, it becomes possible to operate the display device without contact (touchless). This configuration reduces the risk of the display device becoming dirty or scratched, or makes it possible to operate the display device without the object directly touching any dirt (e.g., dust or viruses) attached to the display device.

[0173] A display device according to one aspect of the present invention can have a variable refresh rate. For example, the refresh rate can be adjusted according to the content displayed on the display device (for example, within a range of 1 Hz to 240 Hz) to reduce power consumption. In addition, the drive frequency of the touch sensor or near touch sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or near touch sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration enables low power consumption and increases the response speed of the touch sensor or near touch sensor.

[0174] It is preferable that the light-receiving device 212PS is provided on all pixels of the display device. By providing the light-receiving device 212PS on all pixels, touch detection can be performed with high accuracy. Alternatively, the light-receiving device 212PS may be provided on some pixels. For example, the display device may have pixels equipped with both a light-emitting device and a light-receiving device, and pixels equipped with a light-receiving device (but without a light-emitting device).

[0175] Figure 22A shows an example of a configuration different from the display device 200 described above. The display device 200A shown in Figure 22A includes a substrate 201, a substrate 202, light-emitting devices 211R, 211G, 211B, 211IR, a light-receiving device 212PS, and a functional layer 203, etc. The display device 200A mainly differs from the display device 200 described above in that it has a light-emitting device 211IR.

[0176] Light-emitting devices 211R, 211G, 211B, and 212PS are provided between substrate 201 and substrate 202. Light-emitting device 211IR emits infrared light. Light-emitting device 211IR can be any of the aforementioned light-emitting devices.

[0177] Figure 22A shows a finger 220 touching the surface of the substrate 202. A portion of the light emitted by the light-emitting device (e.g., light-emitting device 211IR) is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving device 212PS, allowing detection of the finger 220's contact with the substrate 202. For example, by emitting infrared light from the light-emitting device 211IR and detecting the infrared light with the light-receiving device 212PS, touch detection becomes possible even in dark places.

[0178] The display device 200A can display an image on the display unit using light-emitting devices 211R, 211G, and 211B, and can also perform touch detection on the display unit using light-emitting device 211IR and light-receiving device 212PS. In addition, the display device 200A can display an image on the display unit and also perform imaging on the display unit.

[0179] Figure 22B shows how light 191 emitted from the light-emitting device 211G is reflected by an object (e.g., a finger 220), and the reflected light 192 is incident on the light-receiving device 212PS. Figure 22C shows how light 191 emitted from the light-emitting device 211IR is reflected by an object (e.g., a finger 220), and the reflected light 192 is incident on the light-receiving device 212PS. The object is not in contact with the display device 200A, but the object can be detected using the light-receiving device 212PS.

[0180] Figure 23A shows an example of a configuration different from the aforementioned display device 200A. The display device 200B shown in Figure 23A includes a substrate 201, a substrate 202, light-emitting devices 211R, 211G, 211B, 211IR, light-receiving devices 212PS, 212IRS, and a functional layer 203, etc. The display device 200B differs from the aforementioned display device 200A mainly in the configuration of the light-receiving devices.

[0181] Light-emitting devices 211R, 211G, and 211B, light-receiving device 212PS, and light-receiving device 212IRS are provided between substrate 201 and substrate 202. Light-receiving device 212PS receives visible light. Light-receiving device 212IRS receives infrared light. Light-receiving devices 212PS and 212IRS can be replaced with the aforementioned light-receiving devices.

[0182] Figure 23A shows how a finger 220 touches the surface of the substrate 202. A portion of the light emitted by the light-emitting device (e.g., light-emitting device 211IR) is reflected at the contact point between the substrate 202 and the finger 220. A portion of the reflected light is then incident on the light-receiving device 212IRS, allowing detection that the finger 220 has come into contact with the substrate 202.

[0183] Figure 23B shows how light 191 emitted from the light-emitting device 211IR is reflected by an object (e.g., a finger 220), and the reflected light 192 is incident on the light-receiving device 212IRS. Figure 23C shows how light 191 emitted from the light-emitting device 211G is reflected by an object (e.g., a finger 220), and the reflected light 192 is incident on the light-receiving device 212PS. Although the object is not in contact with the display device 200B, it can be detected using the light-receiving device 212PS or the light-receiving device 212IRS.

[0184] The area of ​​the light-receiving region of the light-receiving device 212PS (hereinafter also referred to as the light-receiving area) is preferably smaller than the light-receiving area of ​​the light-receiving device 212IRS. By reducing the light-receiving area of ​​the light-receiving device 212PS, that is, by narrowing the imaging range, the light-receiving device 212PS can perform high-resolution imaging compared to the light-receiving device 212IRS. In this case, the light-receiving device 212PS can be used for imaging for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), or faces. The wavelength of light to be detected by the light-receiving device 212PS may be appropriately determined depending on the application.

[0185] Depending on the function, the object detection method may be selected based on the difference in detection accuracy between the light-receiving device 212PS and the light-receiving device 212IRS. For example, the scrolling function of the display screen may be implemented using a near-touch sensor function with the light-receiving device 212IRS, while the input function using a keyboard displayed on the screen may be implemented using a high-resolution touch sensor function with the light-receiving device 212PS.

[0186] By equipping a single pixel with two types of light-receiving devices, it is possible to add two additional functions in addition to the display function, resulting in a multi-functional display device.

[0187] Furthermore, in order to perform high-resolution imaging, it is preferable that the light-receiving device 212PS be provided on all pixels of the display device. On the other hand, since the light-receiving device 212IRS used for touch sensors or near-touch sensors does not require the same high precision as detection using the light-receiving device 212PS, it may be provided on only some of the pixels of the display device. By reducing the number of light-receiving devices 212IRS in the display device to fewer than the number of light-receiving devices 212PS, the detection speed can be increased.

[0188] As described above, the display device of this embodiment can be made into a multi-functional display device by mounting a light-emitting device and a light-receiving device on a single pixel. For example, a display device having a high-definition imaging function and a sensing function such as a touch sensor or near-touch sensor can be realized.

[0189] A display device according to one aspect of the present invention may emit light of a specific color and receive reflected light reflected from an object. Figure 24A schematically shows, with arrows, the red light emitted from the display device and the red light incident on the display device after being reflected from an object (in this case, finger 220). Figure 24B schematically shows, with arrows, the infrared light emitted from the display device and the infrared light incident on the display device after being reflected from an object (in this case, finger 220).

[0190] When an object is in contact with or in close proximity to a display device, red light is emitted, and the reflected light from the object enters the display device to measure the transmittance of the object to red light. Similarly, when an object is in contact with or in close proximity to a display device, infrared light is emitted, and the reflected light from the object enters the display device to measure the transmittance of the object to infrared light.

[0191] Figure 24C shows an enlarged view of region P, indicated by the dashed line in Figure 24A. Light 191 emitted from the light-emitting device 211R is scattered by the biological tissue on the surface and inside the finger 220, and some of the scattered light travels from inside the body towards the light-receiving device 212PS. This scattered light passes through the blood vessel 91, and the transmitted light 192 enters the light-receiving device 212PS.

[0192] Similarly, the infrared light emitted from the light-emitting device 211IR is scattered by the biological tissue on the surface and inside the finger 220, and some of the scattered infrared light travels from inside the body towards the light-receiving device 212IRS. This scattered infrared light passes through the blood vessels 91, and the transmitted infrared light enters the light-receiving device 212IRS.

[0193] Here, light 192 is light that has passed through biological tissue 93 and blood vessels 91 (arteries and veins). Because arterial blood pulsates with the heartbeat, the absorption of light by arteries fluctuates according to the heartbeat. On the other hand, since biological tissue 93 and veins are not affected by the heartbeat, the absorption of light by biological tissue 93 and the absorption of light by veins remain constant. Therefore, by removing components that remain constant over time from the light 192 incident on the display device, the light transmittance of arteries can be calculated. In addition, the transmittance of red light is lower for hemoglobin that is not bound to oxygen (also called deoxygenated hemoglobin) than for hemoglobin that is bound to oxygen (also called oxygenated hemoglobin). The transmittance of infrared light is about the same for oxygenated hemoglobin and deoxygenated hemoglobin. By measuring the transmittance of arteries to red light and to infrared light, the ratio of oxygenated hemoglobin to the sum of oxygenated and deoxygenated hemoglobin, i.e., oxygen saturation (hereinafter also called peripheral oxygen saturation (SpO2)), can be calculated. Thus, a display device according to one aspect of the present invention can function as a reflective pulse oximeter.

[0194] For example, when a finger touches the display area of ​​a display device, positional information of the area in contact with the finger is acquired. Then, red light is emitted from the area in contact with the finger and the pixels in its vicinity, and the transmittance of the arteries to red light is measured. Subsequently, infrared light is emitted, and the transmittance of the arteries to infrared light is measured, thereby calculating oxygen saturation. Note that the order in which the transmittance to red light and the transmittance to infrared light are measured is not particularly limited. The transmittance to infrared light may be measured first, followed by the transmittance to red light. Furthermore, although an example of calculating oxygen saturation using a finger is shown here, the present invention is not limited to this. Oxygen saturation can also be calculated using parts other than the finger. For example, oxygen saturation can be calculated by measuring the transmittance of the arteries to red light and the transmittance of the arteries to infrared light while the palm is in contact with the display area of ​​the display device.

[0195] Figure 25A shows an example of an electronic device to which a display device according to one aspect of the present invention is applied. The portable information terminal 400 shown in Figure 25A can be used, for example, as a smartphone. The portable information terminal 400 has a housing 402 and a display unit 404. The display unit 404 can be fitted with the aforementioned display device. For example, the aforementioned display device 200B can be suitably used as the display unit 404.

[0196] Figure 25A shows a finger 406 in contact with the display unit 404 of the portable information terminal 400. In Figure 25A, the area where the touch was detected and the surrounding area 408 are indicated by dashed lines.

[0197] The portable information terminal 400 emits red light from pixels in a region 408, and detects the red light that has entered the display portion 404. Similarly, by emitting infrared light from the pixels in the region 408 and detecting the infrared light that has entered the display portion 404, the oxygen saturation of a finger 406 can be measured. FIG. 25B shows how the pixels in the region 408 are lit. In FIG. 25B, the finger 406 is shown as being transmitted therethrough, only the outline thereof is indicated by a broken line, and the region 408 is hatched. As shown in FIG. 25B, the lit region 408 is hidden by the finger 406 and is less visible to the user. Therefore, the oxygen saturation can be measured without making the user feel stressed. Further, the portable information terminal 400 can measure oxygen saturation at any position within the display portion 404.

[0198] The obtained oxygen saturation may be displayed on the display portion 404. FIG. 25C shows how an image 409 indicating oxygen saturation is displayed in a region 407. In FIG. 25C, as an example of the image 409, the characters "SpO2 97%" are shown. Note that the image 409 may be an image, and may include images and characters. Further, the region 407 may be provided at any position in the display portion 404.

[0199] This embodiment can be appropriately combined with other embodiments. In addition, in the present specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be combined as appropriate.

[0200] (Embodiment 4) In this embodiment, a display device according to one embodiment of the present invention and a manufacturing method thereof will be described with reference to FIGS. 26 to 33.

[0201] When manufacturing a display device including a light-emitting device and a light-receiving device, it is necessary to form a light-emitting layer and an active layer each in an island shape.

[0202] For example, island-shaped light-emitting layers and active layers can be deposited using a vacuum deposition method with a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers and active layers due to various factors such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the deposited film due to vapor scattering. Therefore, it is difficult to increase the resolution and aperture ratio of the display device.

[0203] In a method for manufacturing a display device according to one aspect of the present invention, island-shaped pixel electrodes (also called lower electrodes) are formed, a first layer which will be an EL layer is formed on one surface, and then a first mask layer is formed on the first layer. Then, a first resist mask is formed on the first mask layer, and the first layer and the first mask layer are processed using the first resist mask to form island-shaped EL layers. Similarly, a second layer which will be a light-receiving layer is formed using a second mask layer and a second resist mask to form island-shaped light-receiving layers.

[0204] Thus, in the method for manufacturing a display device according to one aspect of the present invention, island-shaped EL layers are not formed by a pattern on a metal mask, but rather by processing after a layer to be the EL layer is deposited on one surface. Similarly, island-shaped light-receiving layers are not formed by a pattern on a metal mask, but rather by processing after a layer to be the light-receiving layer is deposited on one surface. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layers can be made separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. In addition, a light-receiving device can be provided in the pixel, enabling the realization of a display device with high-definition imaging capabilities and sensing capabilities such as a touch sensor or near-touch sensor. Moreover, by providing a mask layer on the EL layer and the light-receiving layer, damage to the EL layer and light-receiving layer during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device and light-receiving device can be improved.

[0205] While it is difficult to reduce the spacing between adjacent light-emitting and light-receiving devices to less than 10 μm using, for example, a metal mask formation method, the above method allows for narrowing the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less. Furthermore, by using, for example, an exposure apparatus for LSIs, the spacing can be reduced to 500 nm or less, 200 nm or less, 100 nm or less, and even 50 nm or less. This allows for an increase in the area of ​​the light-emitting region (hereinafter also referred to as the light-emitting area) and the light-receiving area within the pixel, making it possible to approach a 100% aperture ratio. For example, an aperture ratio of 50% or more, 60% or more, 70% or more, 80% or more, and even 90% or more, can be achieved, and even less than 100%.

[0206] The patterns of the EL layer and the light-receiving layer themselves can also be made extremely small compared to when a metal mask is used. For example, when a metal mask is used to create the EL layer and the light-receiving layer, variations in thickness occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as an emitting or receiving region relative to the total area of ​​the pattern. On the other hand, with the above manufacturing method, the pattern is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the pattern, and even with a fine pattern, almost the entire area can be used as an emitting or receiving region. Therefore, it is possible to manufacture a display device that combines high resolution and a high aperture ratio.

[0207] <Example of display device configuration> A display device according to one aspect of the present invention is shown in Figures 26A and 26B.

[0208] Figure 26A is a top view of the display device 100. The display device 100 has a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 140 outside the display unit.

[0209] A stripe array is applied to the pixel 110 shown in Figure 26A. The pixel 110 shown in Figure 26A is composed of four subpixels: subpixel 110a, subpixel 110b, subpixel 110c, and subpixel 110d. Subpixels 110a, 110b, and 110c each have a light-emitting device that emits light in different wavelength regions. The aforementioned light-emitting device can be used as the light-emitting device. Examples of subpixels 110a, 110b, and 110c include subpixels of three colors: red (R), green (G), and blue (B), and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). Subpixel 110d has a light-receiving device. The aforementioned light-receiving device can be used as the light-receiving device.

[0210] Figure 26A shows an example where each subpixel is arranged in the X direction, and where subpixels of the same type are arranged in the Y direction. Note that different types of subpixels may be arranged in the Y direction, and subpixels of the same type may be arranged in the X direction.

[0211] Figure 26A shows an example where the connection portion 140 is located below the display portion in a top view, but it is not particularly limited. The connection portion 140 only needs to be provided at least one location on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. Furthermore, the connection portion 140 may be singular or multiple.

[0212] Figure 26B shows a cross-sectional view of the section between the dashed line X1 and X2 in Figure 26A.

[0213] As shown in Figure 26B, the display device 100 has light-emitting devices 130a, 130b, 130c, and a light-receiving device 130d on a layer 101 containing transistors. Furthermore, protective layers 131 and 132 are provided to cover these light-emitting and light-receiving devices. A substrate 120 is bonded to the protective layer 132 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting and light-receiving devices.

[0214] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0215] For example, a laminated structure can be applied to the transistor-containing layer 101, in which multiple transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The transistor-containing layer 101 may have recesses between adjacent light-emitting devices. For example, recesses may be provided in the insulating layer located on the outermost surface of the transistor-containing layer 101.

[0216] Light-emitting devices 130a, 130b, and 130c each emit light in different wavelength ranges. Preferably, light-emitting devices 130a, 130b, and 130c are a combination that emits three colors of light, for example, red (R), green (G), and blue (B).

[0217] The light-emitting device 130a includes a conductive layer 111a on a layer 101 containing a transistor, an island-shaped EL layer 113a on the conductive layer 111a, a layer 114 on the island-shaped EL layer 113a, and a common electrode 115 on the layer 114.

[0218] The light-emitting device 130b includes a conductive layer 111b over a layer 101 including a transistor, an island-shaped EL layer 113b over the conductive layer 111b, a layer 114 over the island-shaped EL layer 113b, and a common electrode 115 over the layer 114.

[0219] The light-emitting device 130c includes a conductive layer 111c over a layer 101 including a transistor, an island-shaped EL layer 113c over the conductive layer 111c, a layer 114 over the island-shaped EL layer 113c, and a common electrode 115 over the layer 114.

[0220] The light-receiving device 130d includes a conductive layer 111d over a layer 101 including a transistor, an island-shaped light-receiving layer 113d over the conductive layer 111d, a layer 114 over the island-shaped light-receiving layer 113d, and a common electrode 115 over the layer 114.

[0221] The light-emitting devices of respective colors and the light-receiving device share the same film as the common electrode. The common electrode is electrically connected to a conductive layer provided in the connection portion 140. Accordingly, the same potential is supplied to the common electrodes included in the light-emitting devices of respective colors and the light-receiving device.

[0222] As the pair of electrodes (pixel electrode and common electrode) of the light-emitting and light-receiving devices, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum-containing alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver, palladium, and copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, etc., can also be used.

[0223] It is preferable that the light-emitting device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device.

[0224] Furthermore, the semi-transparent / semi-reflective electrode can have a laminated structure consisting of an electrode that reflects visible light and an electrode that transmits visible light (also called a transparent electrode).

[0225] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode with a visible light transmittance of 40% or more in a light-emitting device. The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% to 95%, preferably 30% to 80%. The visible light reflectance of the reflective electrode shall be 40% to 100%, preferably 70% to 100%. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the value be Ωcm or less. Furthermore, if the light-emitting device emits infrared light, it is preferable that the transmittance or reflectance of these electrodes for infrared light, similar to the transmittance or reflectance for visible light, meet the above numerical range.

[0226] The EL layers 113a, 113b, 113c, and light-receiving layer 113d are each provided in an island-like manner. Each of the EL layers 113a, 113b, and 113c has an emissive layer. Preferably, each of the EL layers 113a, 113b, and 113c has an emissive layer that emits light in different wavelength regions. The light-receiving layer 113d has an active layer.

[0227] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Infrared light-emitting materials may also be used.

[0228] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0229] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0230] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0231] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0232] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0233] For a combination of materials to form an excited complex, it is preferable that the HOMO level (highest occupied orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0234] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be read as transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing the differences in the transient response.

[0235] The EL layer 113a, EL layer 113b, and EL layer 113c may further include layers other than the light-emitting layer, such as a material with high hole injection properties, a material with high hole transport properties, a hole blocking material, a material with high electron transport properties, a material with high electron injection properties, an electron blocking material, or a bipolar material (a material with high electron transport and hole transport properties).

[0236] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0237] For example, each of the EL layers 113a, 113b, and 113c may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0238] Among the EL layers, one or more layers can be formed in common for each color, including hole injection layers, hole transport layers, hole blocking layers, electron blocking layers, electron transport layers, and electron injection layers. For example, layer 114 may be a carrier injection layer (hole injection layer or electron injection layer). Furthermore, all layers of the EL layer may be manufactured separately for each color. In other words, the EL layer does not necessarily have to have layers formed in common for each color.

[0239] Preferably, the EL layer 113a, EL layer 113b, and EL layer 113c each have an emissive layer and a carrier transport layer on the emissive layer. This suppresses the exposure of the emissive layer to the outermost surface during the manufacturing process of the display device 100, thereby reducing damage to the emissive layer. This improves the reliability of the light-emitting device.

[0240] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0241] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0242] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material is 1 × 10⁻¹⁶ -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0243] The electron injection layer is a layer that injects electrons from the cathode to the electron transport layer, and is a layer containing a material with high electron injection capabilities. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection capabilities. Composite materials containing both electron transport materials and donor materials (electron-donating materials) can also be used as materials with high electron injection capabilities.

[0244] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF). x (where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, this multilayer structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0245] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0246] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) level of organic compounds containing lone pairs of electrons is between -3.6 eV and -2.3 eV. In addition, the highest occupied molecular orbital (HOMO) level and LUMO level of organic compounds can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0247] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino<2,3-a:2',3'-c>phenazine (abbreviated as HATNA), 2,4,6-tris<3'-(pyridine-3-yl)biphenyl-3-yl>-1,3,5-triazine (abbreviated as TmPPPyTz), etc., can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0248] When fabricating a tandem light-emitting device, an intermediate layer is provided between the two light-emitting units. The intermediate layer has the function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.

[0249] As the intermediate layer, for example, a material applicable to the electron injection layer, such as lithium, can be suitably used. Alternatively, as the intermediate layer, a material applicable to the hole injection layer can be suitably used. Furthermore, the intermediate layer can include a layer containing a hole transport material and an acceptor material (electron-accepting material). Alternatively, the intermediate layer can include a layer containing an electron transport material and a donor material. By forming an intermediate layer having such a layer, the increase in driving voltage when light-emitting units are stacked can be suppressed.

[0250] The active layer contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor in the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0251] As for the n-type semiconductor material of the active layer, fullerene (for example, C 60 , C 70 Examples include electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Both the HOMO and LUMO levels of fullerenes are deep (low). Because the LUMO level of fullerenes is deep, they have extremely high electron-accepting properties. Normally, when π-electron conjugation (resonance) spreads out in a plane, as in benzene, electron-donating properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the large spread of π-electron conjugation. High electron-accepting properties allow for fast and efficient charge separation, making them useful as photodetectors. 60 , C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0252] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI), and 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviated as FT2TDMN).

[0253] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0254] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0255] Examples of materials for p-type semiconductors include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Furthermore, examples of materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indrocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0256] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0257] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0258] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0259] The light-emitting device and the light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device and the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating, respectively.

[0260] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transport materials. In addition, inorganic compounds such as zinc oxide (ZnO) can be used as electron transport materials.

[0261] The active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method can be used in which an acceptor material is dispersed in PBDB-T or a PBDB-T derivative.

[0262] The active layer may contain a mixture of three or more materials. For example, to broaden the wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0263] Each side of the conductive layer 111a, conductive layer 111b, conductive layer 111c, conductive layer 111d, EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d is covered by insulating layer 125 and insulating layer 127. This prevents layer 114 (or common electrode 115) from coming into contact with any side of the conductive layer 111a, conductive layer 111b, conductive layer 111c, conductive layer 111d, EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d, thereby preventing short circuits in the light-emitting device and light-receiving device.

[0264] The insulating layer 125 preferably covers at least the sides of the conductive layers 111a, 111b, 111c, and 111d. Furthermore, it is preferable that the insulating layer 125 covers the sides of the EL layers 113a, 113b, 113c, and 113d. The insulating layer 125 can be configured to be in contact with each of the sides of the conductive layers 111a, 111b, 111c, 111d, EL layers 113a, 113b, 113c, and 113d.

[0265] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with the sides of the conductive layers 111a, 111b, 111c, 111d, EL layer 113a, 113b, EL layer 113c, and light-receiving layer 113d via the insulating layer 125.

[0266] Note that it is not necessary to provide either the insulating layer 125 or the insulating layer 127. For example, if the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the respective sides of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d. The insulating layer 127 can be provided on layer 101 so as to fill the space between the EL layer of the light-emitting device and the light-receiving layer of the light-receiving device.

[0267] Layer 114 and the common electrode 115 are provided on EL layer 113a, EL layer 113b, EL layer 113c, light-receiving layer 113d, insulating layer 125, and insulating layer 127. Before insulating layers 125 and 127 are provided, a step difference exists between the region where pixel electrodes are provided and the region where pixel electrodes are not provided (the region between the light-emitting device and the light-receiving device). In one embodiment of the present invention, the presence of insulating layers 125 and 127 makes this step difference flat and improves the coverage of layer 114 and the common electrode 115. Therefore, connection failures due to step breaks in the common electrode 115 can be suppressed. Alternatively, the increase in electrical resistance due to the common electrode 115 becoming locally thinner because of the step difference can be suppressed.

[0268] To improve the flatness of the formation surfaces of layer 114 and common electrode 115, it is preferable that the heights of the upper surfaces of insulating layer 125 and insulating layer 127 match or approximately match the height of at least one of the upper surfaces of EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d, respectively. Furthermore, it is preferable that the upper surface of insulating layer 127 has a flat shape, although it may have convex or concave portions.

[0269] The insulating layer 125 has regions that are in contact with the sides of the EL layers 113a, 113b, 113c and the light-receiving layer 113d, and functions as a protective insulating layer for the EL layers 113a, 113b, 113c and the light-receiving layer 113d. By providing the insulating layer 125, it is possible to suppress the intrusion of impurities (oxygen, moisture, etc.) into the interior from the sides of the EL layers 113a, 113b, 113c and the light-receiving layer 113d, resulting in a highly reliable display device.

[0270] If the width (thickness) of the insulating layer 125 in the region in contact with the sides of the EL layers 113a, 113b, 113c and the light-receiving layer 113d is large in a cross-sectional view, the spacing between the EL layers 113a, 113b, 113c and the light-receiving layer 113d will increase, which may result in a lower aperture ratio. Conversely, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing the intrusion of impurities into the interior from the sides of the EL layers 113a, 113b, 113c and the light-receiving layer 113d may be reduced.

[0271] The width (thickness) of the insulating layer 125 in the region in contact with the sides of the EL layer 113a, EL layer 113b, EL layer 113c and the light-receiving layer 113d is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, more preferably 5 nm to 150 nm, more preferably 5 nm to 100 nm, more preferably 10 nm to 100 nm, and more preferably 10 nm to 50 nm. By setting the width (thickness) of the insulating layer 125 within the above range, a display device with a high aperture ratio and high reliability can be obtained.

[0272] The insulating layer 125 may be made of an inorganic material. For example, the insulating layer 125 can be an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxidoxide-nitriding insulating film, and an oxide-nitriding insulating film. The insulating layer 125 may be a single layer or a laminated structure.

[0273] The insulating layer 125 can be formed using sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), atomic layer deposition (ALD), or other methods. The insulating layer 125 is preferably formed using the ALD method, which provides good coverage. The ALD method is preferable because it causes minimal damage to the surface being formed.

[0274] Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxidative nitride films and aluminum oxidative nitride films. Examples of nitride oxide insulating films include silicon nitride oxide films and aluminum nitride oxide films. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer in the formation of the insulating layer 127 described later. In particular, by applying inorganic insulating films such as aluminum oxide films, hafnium oxide films, and silicon oxide films formed by the ALD method to the insulating layer 125, it is possible to form an insulating layer 125 with few pinholes and excellent function in protecting the EL layer.

[0275] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0276] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the recess in the insulating layer 125 formed between adjacent light-emitting devices. In other words, the presence of the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. Suitable insulating layers 127 include those made of organic materials. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin can be used as the insulating layer 127. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0277] The difference between the height of the upper surface of the insulating layer 127 and the height of the upper surface of any of the EL layers 113a, EL layers 113b, EL layers 113c, and light-receiving layer 113d is preferably 0.5 times or less the thickness of the insulating layer 127, and more preferably 0.3 times or less. Alternatively, the insulating layer 127 may be provided such that, for example, the upper surface of any of the EL layers 113a, EL layers 113b, EL layers 113c, and light-receiving layer 113d is higher than the upper surface of the insulating layer 127. Alternatively, the insulating layer 127 may be provided such that, for example, the upper surface of the insulating layer 127 is higher than the upper surface of the light-emitting layer of the EL layers 113a, EL layers 113b, and EL layers 113c, and higher than the upper surface of the active layer of the light-receiving layer 113d.

[0278] It is preferable that protective layers 131 and 132 are provided on the light-emitting devices 130a, 130b, 130c, and light-receiving device 130d. Providing protective layers 131 and 132 can improve the reliability of the light-emitting devices and light-receiving devices.

[0279] The conductivity of protective layers 131 and 132 is not required. At least one of an insulating film, a semiconductor film, and a conductive film can be used as protective layers 131 and 132.

[0280] The presence of inorganic films in protective layers 131 and 132 prevents oxidation of the common electrode 115 and suppresses the intrusion of impurities (such as moisture and oxygen) into light-emitting devices 130a, 130b, 130c, and light-receiving device 130d, thereby suppressing degradation of the light-emitting and light-receiving devices and improving the reliability of the display device.

[0281] For protective layers 131 and 132, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxide nitride films and aluminum oxide nitride films. Examples of nitride oxide insulating films include silicon oxide nitride films and aluminum oxide nitride films.

[0282] The protective layers 131 and 132 preferably each have a nitride insulating film or a nitride oxide insulating film, and more preferably a nitride insulating film.

[0283] The protective layers 131 and 132 may also be made of an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0284] When light emission from a light-emitting device and light incidence to a light-receiving device are captured via protective layers 131 and 132, it is preferable that protective layers 131 and 132 have high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0285] For example, protective layers 131 and 132 can be a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film. By using such a laminated structure, it is possible to suppress impurities (water, oxygen, etc.) from entering the EL layer.

[0286] Furthermore, protective layers 131 and 132 may have organic films. For example, protective layer 132 may have both an organic film and an inorganic film.

[0287] Different film deposition methods may be used for protective layer 131 and protective layer 132. Specifically, protective layer 131 may be formed using the ALD method and protective layer 132 may be formed using the sputtering method.

[0288] The upper edges of conductive layers 111a, 111b, 111c, and 111d are not covered by an insulating layer. Therefore, the spacing between adjacent light-emitting devices and light-receiving devices can be made extremely narrow. Consequently, a high-definition or high-resolution display device can be created.

[0289] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0290] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. The SBS structure allows for the optimization of materials and configuration for each light-emitting device, thus increasing the freedom of material and configuration selection and making it easier to improve brightness and reliability.

[0291] In this specification, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. A white light-emitting device can be combined with a colored layer (for example, a color filter) to realize a full-color display device.

[0292] Here, light-emitting devices can be broadly classified into single structures and tandem structures. A single-structure device has one light-emitting unit between a pair of electrodes, and it is preferable that this light-emitting unit includes one or more light-emitting layers. To obtain white light emission, light-emitting layers should be selected such that the light emitted from each of the two or more layers is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a configuration that emits white light as a whole can be obtained. In the case of a light-emitting device having three or more light-emitting layers, a configuration that emits white light can be obtained by mixing the light-emitting colors of each light-emitting layer.

[0293] A tandem device preferably has two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably includes one or more light-emitting layers. To obtain white light emission, the device should be configured such that the light from the light-emitting layers of the multiple light-emitting units is combined to produce white light emission. The configuration for obtaining white light emission is the same as that for a single-structure device. In a tandem device, it is preferable to provide an intermediate layer, such as a charge-generating layer, between the multiple light-emitting units.

[0294] When comparing the aforementioned white light-emitting devices (single or tandem structure) with SBS structure light-emitting devices, SBS structure light-emitting devices can consume less power than white light-emitting devices. If you want to keep power consumption low, it is preferable to use an SBS structure light-emitting device. On the other hand, white light-emitting devices are preferable because their manufacturing process is simpler than that of SBS structure light-emitting devices, which can lead to lower manufacturing costs or higher manufacturing yields.

[0295] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the device has a region where the gap between the side surface of EL layer 113a and the side surface of EL layer 113b, or the gap between the side surface of EL layer 113b and the side surface of EL layer 113c is 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0296] Similarly, the display device of this embodiment can reduce the distance between light-receiving devices. Specifically, the distance between light-receiving devices, the distance between light-receiving layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the display device has a region where the distance between the side surface of a light-receiving layer and the side surface of an adjacent light-receiving layer is 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0297] The display device of this embodiment can reduce the distance between the light-emitting device and the light-receiving device. Specifically, the distance between the light-emitting device and the light-receiving device, the distance between the EL layer and the light-receiving layer, or the distance between the pixel electrodes can be less than 20 μm, 10 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of the EL layer 113a and the side surface of the light-receiving layer 113d, the distance between the side surface of the EL layer 113b and the side surface of the light-receiving layer 113d, or the distance between the side surface of the EL layer 113c and the side surface of the light-receiving layer 113d has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0298] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 120.

[0299] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using a flexible material for the substrate 120 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as the substrate 120.

[0300] As the substrate 120, various materials can be used, including polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. Glass with a thickness sufficient to provide flexibility may also be used for the substrate 120.

[0301] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0302] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0303] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic resin film.

[0304] When using a film as a substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0305] The resin layer 122 can be made of various types of curing adhesives, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, or anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0306] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0307] As a translucent conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be translucent. Furthermore, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes constituting display devices, and as conductive layers in light-emitting devices (conductive layers that function as pixel electrodes or common electrodes).

[0308] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0309] Furthermore, one embodiment of the present invention may have a display device that includes an OS transistor and a light-emitting device with an MML (metal maskless) structure. This configuration makes it possible to extremely reduce the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current or side leakage current). With this configuration, when an image is displayed on the display device, the observer can observe one or more of the following: image sharpness, image clarity, and a high contrast ratio. Moreover, by having an extremely low leakage current that can flow through the transistor and lateral leakage current between light-emitting devices, it is possible to achieve a display with virtually no light leakage that may occur when displaying black (also called a true black display).

[0310] <Pixel layout> This section explains the layout of pixels. There are no particular limitations on the arrangement of subpixels, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0311] The top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), or pentagon, or a polygon with rounded corners, or an ellipse or a circle. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting area of ​​a light-emitting device or the light-receiving area of ​​a light-receiving device.

[0312] The pixels 110 shown in Figures 27A to 27C are arranged in a stripe pattern.

[0313] A display unit of one embodiment of the present invention has a plurality of pixels, which are arranged in a matrix in the row and column directions. A display unit to which the pixel layout shown in Figures 27A to 27C is applied has a first array in which sub-pixels 110a, 110b, 110c, and 110d are repeatedly arranged in this order in the row direction. Furthermore, the first array is repeatedly arranged in the column direction.

[0314] The display unit has a second array in which sub-pixels 110a are repeatedly arranged in the column direction, a third array in which sub-pixels 110b are repeatedly arranged in the column direction, a fourth array in which sub-pixels 110c are repeatedly arranged in the column direction, and a fifth array in which sub-pixels 110d are repeatedly arranged in the column direction. Furthermore, the second array, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0315] In this embodiment, the horizontal direction of the drawing is designated as the row direction and the vertical direction as the column direction in order to clearly explain the pixel layout, but it is not limited to this, and the row direction and column direction can be swapped. Therefore, in this specification, one of the row direction and column direction may be designated as the first direction, and the other of the row direction and column direction may be designated as the second direction. The second direction is perpendicular to the first direction. Note that if the top surface shape of the display unit is rectangular, the first direction and the second direction do not have to be parallel to the straight portion of the outline of the display unit. Also, the top surface shape of the display unit is not limited to a rectangle, but may be a polygon or a shape with curves (circle, ellipse, etc.), and the first direction and the second direction can be any direction relative to the display unit.

[0316] In this embodiment, the order of subpixels is shown from left to right in the drawing for clarity, but it is not limited to this order and can be rearranged to start from right. Similarly, the order of subpixels is shown from top to bottom in the drawing, but it is not limited to this order and can be rearranged to start from bottom.

[0317] In this specification, "repeated arrangement" refers to the smallest unit of the sub-pixel sequence being arranged two or more times.

[0318] Figure 27A shows an example where each subpixel has a rectangular top surface shape, Figure 27B shows an example where each subpixel has a top surface shape formed by connecting two semicircles and a rectangle, and Figure 27C shows an example where each subpixel has an elliptical top surface shape.

[0319] In photolithography, the finer the pattern being processed, the more significant the effects of light diffraction become. This compromises the fidelity of the transfer of the photomask pattern through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, patterns with rounded corners are likely to be formed. Consequently, the top surface shape of subpixels may be a polygon with rounded corners, an ellipse, or a circle.

[0320] Furthermore, in a method for manufacturing a display device according to one aspect of the present invention, an EL layer or a light-receiving layer is processed into an island shape using a resist mask. The resist film formed on the EL layer or the light-receiving layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer or the light-receiving layer. Therefore, depending on the heat resistance temperature of the EL layer material, the heat resistance temperature of the light-receiving layer material, and the curing temperature of the resist material, the curing of the resist film may be insufficient. A resist film that is not sufficiently cured may take on a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer and the light-receiving layer may become a polygon with rounded corners, an ellipse, or a circle. For example, if an attempt is made to form a resist mask with a square top surface shape, a resist mask with a circular top surface shape may be formed, resulting in the top surface shapes of the EL layer and the light-receiving layer becoming circular.

[0321] Furthermore, in order to achieve the desired shape of the upper surfaces of the EL layer and the light-receiving layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, a correction pattern is added to the corners of the shape on the mask pattern.

[0322] The pixels 110 shown in Figures 27D to 27F have a matrix array applied to them.

[0323] The display unit of a display device to which the pixel layout shown in Figures 27D to 27F is applied has a first array in which sub-pixels 110a and sub-pixels 110b are alternately and repeatedly arranged in the row direction, and a second array in which sub-pixels 110c and sub-pixels 110d are alternately and repeatedly arranged in the row direction. Furthermore, the first array and the second array are repeatedly arranged in this order in the column direction.

[0324] The display unit has a third array in which sub-pixels 110a and sub-pixels 110c are alternately and repeatedly arranged in the column direction, and a fourth array in which sub-pixels 110b and sub-pixels 110d are alternately and repeatedly arranged in the column direction. Furthermore, the third array and the fourth array are alternately and repeatedly arranged in the row direction.

[0325] Figure 27D shows an example where each subpixel has a square top surface shape, Figure 27E shows an example where each subpixel has a roughly square top surface shape with rounded corners, and Figure 27F shows an example where each subpixel has a circular top surface shape.

[0326] Figure 27G shows an example where a single pixel 110 is composed of 2 rows and 3 columns. Pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and one subpixel (subpixel 110d) in the bottom row (row 2). In other words, pixel 110 has subpixel 110a in the left column (column 1), subpixel 110b in the middle column (column 2), subpixel 110c in the right column (column 3), and subpixel 110d across these three columns.

[0327] As shown in Figure 27G, the subpixels may have different sizes. Figure 27G shows a configuration in which subpixel 110d is larger than subpixels 110a to 110c. Figure 27H shows a configuration in which subpixels 110b and 110c are larger than subpixel 110a, and subpixel 110a is larger than subpixel 110d. The pixel 110 shown in Figure 27H has two subpixels (subpixels 110a and 110d) in the left column (1st column), subpixel 110b in the middle column (2nd column), and subpixel 110c in the right column (3rd column).

[0328] The display unit of a display device to which the pixel layout shown in Figure 27G is applied has a first array in which sub-pixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which sub-pixels 110d are repeatedly arranged in the row direction. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0329] The display unit has a third array in which sub-pixels 110a and sub-pixels 110d are alternately arranged in the column direction, a fourth array in which sub-pixels 110b and sub-pixels 110d are alternately arranged in the column direction, and a fifth array in which sub-pixels 110c and sub-pixels 110d are alternately arranged in the column direction. Furthermore, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0330] The display unit of a display device to which the pixel layout shown in Figure 27H is applied has a first array in which sub-pixels 110a, 110b, and 110c are repeatedly arranged in the row direction in that order, and a second array in which sub-pixels 110d, 110b, and 110c are repeatedly arranged in the row direction in that order. Furthermore, the first array and the second array are repeatedly arranged alternately in the column direction.

[0331] The display unit has a third array in which sub-pixels 110a and sub-pixels 110d are alternately arranged in the column direction, a fourth array in which sub-pixels 110b are repeatedly arranged in the column direction, and a fifth array in which sub-pixels 110c are repeatedly arranged in the column direction. Furthermore, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0332] Figure 27I shows an example where one pixel 110 is composed of 2 rows and 3 columns. Pixel 110 has subpixels 110a, 110b, 110c, and three subpixels 110d. Pixel 110 has three subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and three subpixels (three subpixels 110d) in the bottom row (row 2). In other words, pixel 110 has two subpixels (subpixels 110a and 110d) in the left column (column 1), two subpixels (subpixels 110b and 110d) in the middle column (column 2), and two subpixels (subpixels 110c and 110d) in the right column (column 3).

[0333] The display unit of a display device to which the pixel layout shown in Figure 27I is applied has a first array in which sub-pixels 110a, 110b, and 110c are repeatedly arranged in this order in the row direction, and a second array in which sub-pixels 110d are repeatedly arranged in the row direction. Furthermore, the first array and the second array are alternately and repeatedly arranged in the column direction.

[0334] The display unit has a third array in which sub-pixels 110a and sub-pixels 110d are alternately and repeatedly arranged in the column direction, a fourth array in which sub-pixels 110b and sub-pixels 110d are alternately and repeatedly arranged in the column direction, and a fifth array in which sub-pixels 110c and sub-pixels 110d are alternately and repeatedly arranged in the column direction. Furthermore, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0335] The pixel 110 shown in Figures 27A to 27I is composed of four subpixels: subpixels 110a, 110b, 110c, and 110d. Each of the subpixels 110a, 110b, 110c, and 110d has either a light-emitting device that emits light in a different wavelength range or a light-receiving device. For example, as shown in Figures 28A to 28E, subpixel 110a can be a subpixel (R) that emits red light, subpixel 110b can be a subpixel (G) that emits green light, subpixel 110c can be a subpixel (B) that emits blue light, and subpixel 110d can be a subpixel (PS) that has a light-receiving function.

[0336] A display unit applying the pixel layout shown in Figure 28A has a first array in which sub-pixels (R), sub-pixels (G), sub-pixels (B), and sub-pixels (PS) are repeatedly arranged in this order in the row direction. Furthermore, the first array is repeatedly arranged in the column direction.

[0337] The display unit has a second array in which sub-pixels (R) are repeatedly arranged in the column direction, a third array in which sub-pixels (G) are repeatedly arranged in the column direction, a fourth array in which sub-pixels (B) are repeatedly arranged in the column direction, and a fifth array in which sub-pixels (PS) are repeatedly arranged in the column direction. Furthermore, the second array, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0338] The display unit of a display device to which the pixel layout shown in Figure 28B is applied has a first array in which sub-pixels (R) and sub-pixels (G) are alternately and repeatedly arranged in the row direction, and a second array in which sub-pixels (B) and sub-pixels (PS) are alternately and repeatedly arranged in the row direction. Furthermore, the first array and the second array are repeatedly arranged in this order in the column direction.

[0339] The display unit has a third array in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the column direction, and a fourth array in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction. Furthermore, the third array and the fourth array are alternately and repeatedly arranged in the row direction.

[0340] The display unit of a display device to which the pixel layout shown in Figure 28C is applied has a first array in which sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction, and a second array in which sub-pixels (PS) are repeatedly arranged in the row direction. Furthermore, the first array and the second array are alternately and repeatedly arranged in the column direction.

[0341] The display unit has a third array in which sub-pixels (R) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, a fourth array in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, and a fifth array in which sub-pixels (B) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction. Furthermore, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0342] The display unit of a display device to which the pixel layout shown in Figure 28D is applied has a first array in which sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction, and a second array in which sub-pixels (PS), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction. Furthermore, the first array and the second array are alternately and repeatedly arranged in the column direction.

[0343] The display unit has a third array in which sub-pixels (R) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, a fourth array in which sub-pixels (G) are repeatedly arranged in the column direction, and a fifth array in which sub-pixels (B) are repeatedly arranged in the column direction. Furthermore, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0344] The display unit of a display device to which the pixel layout shown in Figure 28E is applied has a first array in which sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction, and a second array in which sub-pixels (PS) are repeatedly arranged in the row direction. Furthermore, the first array and the second array are alternately and repeatedly arranged in the column direction.

[0345] The display unit has a third array in which sub-pixels (R) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, a fourth array in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, and a fifth array in which sub-pixels (B) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction. Furthermore, the third array, the fourth array, and the fifth array are repeatedly arranged in this order in the row direction.

[0346] The light-emitting areas of subpixels (R), (G), and (B) having light-emitting devices may be the same or different from each other. For example, the light-emitting area of ​​a subpixel having a light-emitting device can be determined according to the lifespan of the light-emitting device. It is preferable to make the light-emitting area of ​​a subpixel with a short lifespan larger than the light-emitting area of ​​the other subpixels.

[0347] Figure 28D shows an example where the light-emitting areas of sub-pixels (G) and (B) are larger than those of sub-pixel (R). This configuration is suitable for use when the lifespan of the light-emitting devices that emit green light and blue light is shorter than that of the light-emitting device that emits red light. In sub-pixels (G) and (B), which have larger light-emitting areas, the current density applied to the light-emitting devices that emit green light and blue light in each sub-pixel is reduced, thus extending the lifespan of these light-emitting devices. In other words, a highly reliable display device can be created.

[0348] Examples of pixel layouts different from those in Figures 27A to 27I and Figures 28A to 28E are shown in Figures 29A and 29B.

[0349] Figure 29A shows four pixels, illustrating a configuration where two adjacent pixels 110A and 110B have different subpixels. Pixel 110A has three subpixels: subpixels 110a, 110b, and 110d. Pixel 110B, adjacent to pixel 110A, has subpixels 110b, 110c, and 110d. In other words, in the column and row directions, pixels 110A containing subpixel 110a and pixels 110B not containing subpixel 110a are alternately arranged. Similarly, in the column and row directions, pixels 110A not containing subpixel 110c and pixels 110B containing subpixel 110c are alternately arranged.

[0350] Pixel 110A is composed of two rows and two columns, with two subpixels (subpixels 110b and 110d) in the left column (column 1) and one subpixel (subpixel 110a) in the right column (column 2). In other words, pixel 110A has two subpixels (subpixels 110a and 110b) in the top row (column 1), two subpixels (subpixels 110a and 110d) in the bottom row (column 2), and furthermore, subpixel 110a spans both rows.

[0351] Pixel 110B is composed of two rows and two columns, with two subpixels (subpixels 110b and 110d) in the left column (column 1) and one subpixel (subpixel 110c) in the right column (column 2). In other words, pixel 110A has two subpixels (subpixels 110b and 110c) in the top row (column 1), two subpixels (subpixels 110c and 110d) in the bottom row (column 2), and furthermore, subpixel 110c spans both rows.

[0352] The pixel shown in Figure 29A consists of two pixels, pixel 110A and pixel 110B, and has four types of subpixels: subpixels 110a, subpixel 110b, subpixel 110c, and subpixel 110d. By using this configuration, it is possible to increase the area of ​​the subpixels while maintaining a pseudo-high resolution, thereby lowering the required processing accuracy. In other words, when comparing with the same processing accuracy, it becomes possible to manufacture a display device with higher resolution. Furthermore, since the number of transistors per unit area can be reduced, productivity can be increased. Therefore, a pseudo-high-resolution display device can be manufactured with high productivity.

[0353] The display unit of a display device to which the pixel layout shown in Figure 29A is applied has a first array ARR1 in which sub-pixels 110b, 110a, 110b, and 110c are repeatedly arranged in the row direction, and a second array ARR2 in which sub-pixels 110d, 110a, 110d, and 110c are repeatedly arranged in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0354] The display unit has a third array ARR3 in which sub-pixels 110b and sub-pixels 110d are alternately and repeatedly arranged in the column direction, and a fourth array ARR4 in which sub-pixels 110a and sub-pixels 110c are alternately and repeatedly arranged in the column direction. Furthermore, the third array ARR3 and the fourth array ARR4 are alternately and repeatedly arranged in the row direction.

[0355] In pixel 110A, it is preferable that sub-pixel 110a has a larger area than both sub-pixel 110b and sub-pixel 110d, and in pixel 110B, it is preferable that sub-pixel 110c has a larger area than both sub-pixel 110b and sub-pixel 110d. Furthermore, it is preferable that the sub-pixel with the largest area in pixel 110A (here, sub-pixel 110a) and the sub-pixel with the largest area in pixel 110B (here, sub-pixel 110c) are different.

[0356] In this specification, the light-emitting area of ​​a sub-pixel having a light-emitting device may be referred to as the sub-pixel area. Similarly, the light-receiving area of ​​a sub-pixel having a light-receiving device may be referred to as the sub-pixel area.

[0357] Figure 29A shows sub-pixels 110a and 110c with the same area, and sub-pixels 110b and 110d with the same area, but the present invention is not limited to this. The areas of sub-pixels 110a and 110c may be different. Also, the areas of sub-pixels 110b and 110d may be different. Figure 29B shows an example where the area of ​​sub-pixel 110b is larger than the area of ​​sub-pixel 110d. Note that the areas of sub-pixels 110b and 110d may be different between pixels 110A and 110B.

[0358] Preferably, the sub-pixels 110a, 110b, and 110c each have light-emitting devices that emit light in different wavelength regions, and the sub-pixel 110d has a light-receiving device. For example, as shown in Figures 30A and 30B, the sub-pixel 110a can be a sub-pixel (R) that emits red light, the sub-pixel 110b can be a sub-pixel (G) that emits green light, the sub-pixel 110c can be a sub-pixel (B) that emits blue light, and the sub-pixel 110d can be a sub-pixel (PS) that has a light-receiving function. The difference between Figure 30A and Figure 30B is that the areas of sub-pixel (G) and sub-pixel (PS) are different.

[0359] A single pixel can be composed of two light-emitting devices from among three colors: red (R), green (G), and blue (B). A light-receiving device can be provided in any pixel. Figures 30A and 30B show a configuration in which pixel 110A has a sub-pixel (R) that emits red light, a sub-pixel (G) that emits green light, and a sub-pixel (PS) that receives light, and pixel 110B has a sub-pixel (B) that emits blue light, a sub-pixel (G) that emits green light, and a sub-pixel (PS) that receives light.

[0360] The display unit of a display device to which the pixel layout shown in Figures 30A and 30B is applied has a first array ARR1 in which sub-pixels (G), sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction, and a second array ARR2 in which sub-pixels (PS), sub-pixels (R), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0361] The display unit has a third array ARR3 in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, and a fourth array ARR4 in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the column direction. Furthermore, the third array ARR3 and the fourth array ARR4 are alternately and repeatedly arranged in the row direction.

[0362] Figures 30A and 30B show an example in which both pixels 110A and 110B are provided with sub-pixels (PS) having light-receiving devices, but the present invention is not limited to this. If high accuracy is not required for the light-receiving function, pixels without sub-pixels (PS) may be provided. In other words, a configuration may be provided in which pixels include sub-pixels (PS) and pixels without sub-pixels (PS).

[0363] As shown in Figures 30A and 30B, it is preferable that the area of ​​the sub-pixel (G) that emits green light is smaller than the area of ​​the sub-pixel (R) that emits red light and the sub-pixel (B) that emits blue light. Since the human visual sensitivity to green is higher than that to red and blue, by making the area of ​​sub-pixel (G) smaller than the areas of sub-pixel (R) and sub-pixel (B), it is possible to create a display device with excellent balance of red (R), green (G), and blue (B) and high visibility.

[0364] Figures 30A and 30B show a configuration in which the area of ​​subpixel (G) is smaller than the areas of subpixel (R) and subpixel (B), but the present invention is not limited to this. For example, the area of ​​subpixel (R) may be smaller than the areas of subpixel (G) and subpixel (B). As mentioned above, the area of ​​the subpixel having a light-emitting device may be determined according to the lifespan of the light-emitting device for each color.

[0365] Modified examples of Figure 29A are shown in Figures 31A and 31B.

[0366] The display unit of a display device to which the pixel layout shown in Figure 31A is applied has a first array ARR1 in which sub-pixels 110b, sub-pixels 110a, sub-pixels 110b and sub-pixels 110c are repeatedly arranged in the row direction, and a second array ARR2 in which sub-pixels 110d, sub-pixels 110a, sub-pixels 110d and sub-pixels 110c are repeatedly arranged in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are repeatedly arranged alternately in the column direction.

[0367] The display unit has a third array ARR3 in which sub-pixels 110b, 110d, and 110a are repeatedly arranged in the column direction, and a fourth array ARR4 in which sub-pixels 110b, 110d, and 110c are repeatedly arranged in the column direction. Furthermore, in the row direction, the third array ARR3, the third array ARR3, the fourth array ARR4, and the fourth array ARR4 are repeatedly arranged in the row direction.

[0368] The display unit of a display device to which the pixel layout shown in Figure 31B is applied has a first array ARR1 in which sub-pixels 110b, 110a, 110d, and 110a are repeatedly arranged in the row direction; a second array ARR2 in which sub-pixels 110d, 110a, 110b, and 110c are repeatedly arranged in the row direction; a third array ARR3 in which sub-pixels 110b, 110c, 110d, and 110c are repeatedly arranged in the row direction; and a fourth array ARR4 in which sub-pixels 110d, 110c, 110b, and 110a are repeatedly arranged in the row direction. Furthermore, the first array ARR1, the second array ARR2, the third array ARR3, and the fourth array ARR4 are repeatedly arranged in the column direction in this order.

[0369] The display unit has a fifth array ARR5 in which sub-pixels 110b and sub-pixels 110d are alternately and repeatedly arranged in the column direction, and a sixth array ARR6 in which sub-pixels 110a and sub-pixels 110c are alternately and repeatedly arranged in the column direction. Furthermore, the fifth array ARR5 and the sixth array ARR6 are alternately and repeatedly arranged in the row direction.

[0370] Figures 32A and 32B show an example configuration in which a sub-pixel 110a has the function of emitting red light (R), a sub-pixel 110b has the function of emitting green light (G), a sub-pixel 110c has the function of emitting blue light (B), and a sub-pixel 110d has the function of receiving light (PS).

[0371] The display unit of a display device to which the pixel layout shown in Figure 32A is applied has a first array ARR1 in which sub-pixels (G), sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction, and a second array ARR2 in which sub-pixels (PS), sub-pixels (R), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are alternately and repeatedly arranged in the column direction.

[0372] The display unit has a third array ARR3 in which sub-pixels (G), sub-pixels (PS), and sub-pixels (R) are repeatedly arranged in the column direction, and a fourth array ARR4 in which sub-pixels (G), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in the column direction. Furthermore, in the row direction, the third array ARR3, the third array ARR3, the fourth array ARR4, and the fourth array ARR4 are repeatedly arranged in the row direction.

[0373] The display unit of a display device to which the pixel layout shown in Figure 32B is applied has a first array ARR1 in which sub-pixels (G), sub-pixels (R), sub-pixels (PS), and sub-pixels (R) are repeatedly arranged in the row direction; a second array ARR2 in which sub-pixels (PS), sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction; a third array ARR3 in which sub-pixels (G), sub-pixels (B), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in the row direction; and a fourth array ARR4 in which sub-pixels (PS), sub-pixels (B), sub-pixels (G), and sub-pixels (R) are repeatedly arranged in the row direction. Furthermore, the first array ARR1, the second array ARR2, the third array ARR3, and the fourth array ARR4 are repeatedly arranged in the column direction in this order.

[0374] The display unit has a fifth array ARR5 in which sub-pixels (G) and sub-pixels (PS) are alternately and repeatedly arranged in the column direction, and a sixth array ARR6 in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the column direction. Furthermore, the fifth array ARR5 and the sixth array ARR6 are alternately and repeatedly arranged in the row direction.

[0375] A modified example of Figure 32A is shown in Figure 33A.

[0376] The display unit of a display device applying the pixel layout shown in Figure 33A has a first array ARR1 in which sub-pixels 110b, 110a, 110b, and 110c are repeatedly arranged in the row direction, and a second array ARR2 in which sub-pixels 110d, 110a, 110d, and 110c are repeatedly arranged in the row direction. Furthermore, the first array ARR1 and the second array ARR2 are alternately arranged in the column direction. Furthermore, the display unit may have a third array ARR3 in which sub-pixels 110a and 110c are alternately arranged in the row direction. The pixel layout shown in Figure 33A may also be called a diamond arrangement.

[0377] The display unit has a fourth array ARR4 in which sub-pixels 110b and sub-pixels 110d are alternately and repeatedly arranged in the column direction, and a fifth array ARR5 in which sub-pixels 110a and sub-pixels 110c are alternately and repeatedly arranged in the column direction. Furthermore, the fourth array ARR4 and the fifth array ARR5 are alternately and repeatedly arranged in the row direction. Furthermore, the display unit may have a sixth array ARR6 in which sub-pixels 110b, sub-pixels 110a, sub-pixels 110d, sub-pixels 110b, sub-pixels 110c, and sub-pixels 110d are alternately arranged in the column direction.

[0378] Figure 33A shows a configuration in which the top surfaces of sub-pixels 110a and 110c are rounded rectangles, and the top surfaces of sub-pixels 110b and 110d are rounded triangles. However, the top surface shapes of the sub-pixels are not particularly limited. For example, the top surfaces of sub-pixels 110b and 110d may be rounded rectangles or circular shapes.

[0379] Figure 33B shows an example configuration in which a sub-pixel 110a has the function of emitting red light (R), a sub-pixel 110b has the function of emitting green light (G), a sub-pixel 110c has the function of emitting blue light (B), and a sub-pixel 110d has the function of receiving light (PS), as shown in Figure 33A.

[0380] The display unit of a display device applying the pixel layout shown in Figure 33B has a first array ARR1 in which sub-pixels (G), sub-pixels (R), sub-pixels (G), and sub-pixels (B) are repeatedly arranged in the row direction, and a second array ARR2 in which sub-pixels (PS), sub-pixels (R), sub-pixels (PS), and sub-pixels (B) are repeatedly arranged in the row direction. The display unit may also have a third array ARR3 in which sub-pixels (R) and sub-pixels (B) are alternately and repeatedly arranged in the row direction.

[0381] The display unit has a fourth array ARR4 in which sub-pixels (G), sub-pixels (R), sub-pixels (PS), sub-pixels (G), sub-pixels (B), and sub-pixels (PS) are repeatedly arranged in the column direction. The display unit may also have a fifth array ARR5 in which sub-pixels (R) and sub-pixels (B) are repeatedly arranged alternately in the column direction, or a sixth array ARR6 in which sub-pixels (G) and sub-pixels (PS) are repeatedly arranged alternately in the column direction.

[0382] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0383] (Embodiment 5) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 34 to 36.

[0384] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0385] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting) images or the like on its display surface. Therefore, a display panel is one form of an output device.

[0386] In this specification, a display device to which a connector such as a flexible printed circuit board (FPC) or TCP (Tape Carrier Package) is attached, or to which an integrated circuit (IC) is mounted using the COG (Chip On Glass) method or COF (Chip On Film) method, may be referred to as a display panel module, display module, or simply a display panel.

[0387] <Display device 100A> Figure 34 shows a perspective view of the display device 100A, and Figure 35A shows a cross-sectional view of the display device 100A.

[0388] The display device 100A has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 34, substrate 152 is clearly indicated by a dashed line.

[0389] The display device 100A includes a display unit 162, a circuit 164, wiring 165, etc. Figure 34 shows an example in which IC 173 and FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Figure 34 can also be described as a display module having the display device 100A, an IC (integrated circuit), and an FPC.

[0390] For example, a scan line drive circuit can be used as circuit 164.

[0391] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0392] Figure 34 shows an example in which IC 173 is provided on the substrate 151 using the COG (Chip On Glass) method or COF (Chip on Film) method, etc. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100A and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using the COF method, etc.

[0393] Figure 35A shows an example of a cross-section obtained by cutting a portion of the display device 100A, including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, and a portion of the area including the end.

[0394] The display device 100A has a light-emitting device, a light-receiving device, transistors 207 and 205, etc., between substrates 151 and 152. Figure 35A shows a light-emitting device 130a that emits red light, a light-emitting device 130b that emits green light, and a light-receiving device 130d as the light-emitting device and light-receiving device.

[0395] Here, if the pixels of the display device have three types of subpixels, each having a light-emitting device that emits a different color from the others, examples of these three subpixels include subpixels of three colors: R, G, and B; and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of these four subpixels include subpixels of four colors: R, G, B, and white (W); and subpixels of four colors: R, G, B, and Y.

[0396] The light-emitting devices 130a and 130b have an optical adjustment layer between the pixel electrode and the EL layer, and the light-receiving device 130d also has an optical adjustment layer between the pixel electrode and the light-receiving layer. As optical adjustment layers, the light-emitting device 130a has a conductive layer 126a, the light-emitting device 130b has a conductive layer 126b, and the light-receiving device 130d has a conductive layer 126d. Details of the light-emitting devices and light-receiving devices can be found in Embodiment 1. The sides of the conductive layers 111a, 111b, 111d, 126a, 126b, 126d, EL layer 113a, EL layer 113b, and light-receiving layer 113d are covered by insulating layers 125 and 127, respectively. A layer 114 is provided on the EL layer 113a, EL layer 113b, light-receiving layer 113d, and insulating layers 125 and 127, and a common electrode 115 is provided on layer 114. In addition, a protective layer 131 is provided on the light-emitting device 130a, light-emitting device 130b, and light-receiving device 130d, respectively. A protective layer 132 is provided on the protective layer 131.

[0397] The protective layer 132 and the substrate 152 are bonded together via an adhesive layer 142. For sealing the light-emitting device, a solid sealing structure or a hollow sealing structure can be applied. In Figure 35A, the space between substrate 152 and substrate 151 is filled with the adhesive layer 142, demonstrating a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), demonstrating a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Furthermore, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0398] The conductive layers 111a, 111b, and 111d are each connected to the conductive layer 222b of the transistor 205 through openings provided in the insulating layer 214.

[0399] The conductive layers 111a, 111b, and 111d have recesses formed to cover the openings provided in the insulating layer 214. It is preferable that layer 128 is embedded in these recesses. It is also preferable to form conductive layer 126a on conductive layer 111a and layer 128, conductive layer 126b on conductive layer 111b and layer 128, and conductive layer 126d on conductive layer 111d and layer 128. Conductive layers 126a, 126b, and 126d can also be called pixel electrodes.

[0400] Layer 128 has the function of flattening the recesses of conductive layers 111a, 111b, and 111d. By providing layer 128, the unevenness of the surface on which the EL layer and light-receiving layer are formed can be reduced, improving the coverage. Furthermore, by providing conductive layers 126a, 126b, and 126d that are electrically connected to conductive layers 111a, 111b, and 111d on conductive layers 111a, 111b, and 111d, on top of conductive layers 111a, 111b, and 111d and layer 128, the regions that overlap with the recesses of conductive layers 111a, 111b, and 111d can also be used as light-emitting regions. This makes it possible to increase the aperture ratio of the pixels.

[0401] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material.

[0402] As layer 128, an insulating layer having an organic material can be suitably used. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as layer 128. Alternatively, a photosensitive resin can be used as layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0403] By using a photosensitive resin, layer 128 can be fabricated using only exposure and development processes, thereby reducing the impact of dry etching or wet etching on the surfaces of conductive layers 111a, 111b, and 111d. Furthermore, by forming layer 128 using a negative-type photosensitive resin, it may be possible to form layer 128 using the same photomask (exposure mask) used to form the openings of the insulating layer 214.

[0404] The conductive layer 126a is provided on the conductive layer 111a and on the layer 128. The conductive layer 126a has a first region in contact with the upper surface of the conductive layer 111a and a second region in contact with the upper surface of the layer 128. Preferably, the height of the upper surface of the conductive layer 111a in contact with the first region and the height of the upper surface of the layer 128 in contact with the second region are the same or approximately the same.

[0405] Similarly, the conductive layer 126b is provided on the conductive layer 111b and on the layer 128. The conductive layer 126b has a first region in contact with the upper surface of the conductive layer 111b and a second region in contact with the upper surface of the layer 128. Preferably, the height of the upper surface of the conductive layer 111b in contact with the first region and the height of the upper surface of the layer 128 in contact with the second region are the same or approximately the same.

[0406] The conductive layer 126d is provided on the conductive layer 111d and on the layer 128. The conductive layer 126d has a first region in contact with the upper surface of the conductive layer 111d and a second region in contact with the upper surface of the layer 128. Preferably, the height of the upper surface of the conductive layer 111d in contact with the first region and the height of the upper surface of the layer 128 in contact with the second region are the same or approximately the same.

[0407] The pixel electrode contains a material that reflects visible light, and the counter electrode contains a material that transmits visible light.

[0408] The display device 100A is a top-emission type. The light emitted from the light-emitting device is emitted towards the substrate 152. It is preferable that the substrate 152 be made of a material with high transmittance to visible light. It is even more preferable that the substrate 152 be made of a material with high transmittance to both visible light and infrared light. Light is incident on the light-receiving device through the substrate 152.

[0409] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor shown in Embodiment 3, etc.

[0410] Both transistors 207 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0411] On the substrate 151, insulating layers 217, 213, 215, and 214 are provided in this order. A portion of insulating layer 217 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0412] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0413] It is preferable to use an inorganic insulating film for insulating layer 217, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxide nitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0414] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100A. This prevents impurities from entering through the organic insulating film from the edge of the display device 100A. Alternatively, the organic insulating film may be formed so that its edge is inward from the edge of the display device 100A, so that the organic insulating film is not exposed at the edge of the display device 100A.

[0415] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating film and an inorganic insulating film. The outermost layer of the insulating layer 214 preferably functions as an etching protective film. This suppresses the formation of depressions in the insulating layer 214 during processing of the conductive layer 111a or conductive layer 126a. Alternatively, depressions may be provided in the insulating layer 214 during processing of the conductive layer 111a or conductive layer 126a.

[0416] In the region 228 shown in Figure 35A, an opening is formed in the insulating layer 214. This prevents impurities from entering the display unit 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. Therefore, the reliability of the display device 100A can be improved.

[0417] Transistors 207 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 217 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 217 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0418] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0419] Transistors 207 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0420] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0421] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region. Alternatively, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0422] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0423] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO) may be used as the semiconductor layer. Alternatively, an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (IAGZO) may be used as the semiconductor layer.

[0424] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. The atomic ratios of the metal elements in such an In-M-Zn oxide include compositions where In:M:Zn = 1:1:1 or close to it, In:M:Zn = 1:1:1.2 or close to it, In:M:Zn = 1:3:2 or close to it, In:M:Zn = 1:3:4 or close to it, In:M:Zn = 2:1:3 or close to it, In:M:Zn = 3:1:2 or close to it, In:M:Zn = 4:2:3, and so on. Examples include compositions in the vicinity of 4:4:4.1 or in the vicinity of 4:4.1, 5:1:3 or in the vicinity of 5:1:3, 5:1:6 or in the vicinity of 5:1:7, 5:1:8 or in the vicinity of 5:1:8, 6:1:6 or in the vicinity of 6:1:6, 5:2:5 or in the vicinity of 5:1:7, 6:1:8 or in the vicinity of 5:1:8, 6:1:6 or in the vicinity of 6:1:6, and 5:2:5 or in the vicinity of 5:1:3.

[0425] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0426] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0427] Figures 35B and 35C show other examples of transistor configurations.

[0428] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 217 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 217 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0429] In the transistor 209 shown in Figure 35B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0430] On the other hand, in the transistor 210 shown in Figure 35C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 35C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 35C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0431] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 111a, 111b, and 111d, and a conductive film obtained by processing the same conductive film as conductive layers 126a, 126b, and 126d. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0432] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 that faces the substrate 151. Various optical components can also be placed on the outside of the substrate 152. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 152.

[0433] By providing protective layers 131 and 132 that cover the light-emitting device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and improve the reliability of the light-emitting device.

[0434] In the region 228 near the edge of the display device 100A, it is preferable that the insulating layer 215 and the protective layer 131 or protective layer 132 are in contact with each other through an opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating films are in contact with each other. This makes it possible to suppress the entry of impurities into the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100A can be improved.

[0435] Substrates 151 and 152 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc., respectively. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using flexible materials for substrates 151 and 152 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 151 or substrate 152.

[0436] Substrates 151 and 152 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 151 and 152 may be made of glass of a thickness sufficient to provide flexibility.

[0437] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0438] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0439] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic resin film.

[0440] When using a film as a substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0441] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0442] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0443] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0444] As a light-transmitting conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. Furthermore, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes constituting display devices, and as conductive layers in light-emitting devices (conductive layers that function as pixel electrodes or common electrodes).

[0445] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0446] <Display device 100B> The display device 100B shown in Figure 36 differs from the display device 100A mainly in that it is a bottom-emission type. Parts that are the same as those of the display device 100A are omitted from the explanation.

[0447] The light emitted by the light-emitting device is emitted towards the substrate 151. It is preferable that the substrate 151 be made of a material with high transmittance to visible light. It is even more preferable that the substrate 151 be made of a material with high transmittance to both visible light and infrared light. On the other hand, the light transmittance of the material used for the substrate 152 is not a concern. Light is incident on the light-receiving device through the substrate 151.

[0448] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 207, and between the substrate 151 and the transistor 205. Figure 36 shows an example in which a light-shielding layer 117 is provided on the substrate 151, an insulating layer 153 is provided on the light-shielding layer 117, and transistors 207, 205, etc. are provided on the insulating layer 153.

[0449] This embodiment can be combined with other embodiments as appropriate.

[0450] (Embodiment 6) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 37 to 44.

[0451] The display device of this embodiment can be a high-definition display device. Therefore, the display device of this embodiment can be used in the display section of wearable devices that can be worn on the head, such as information terminals (wearable devices) such as wristwatches and bracelets, as well as VR devices such as head-mounted displays and AR devices such as glasses.

[0452] <Display Module> Figure 37A shows a perspective view of the display module 280. The display module 280 includes a display device 100C and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100C, but may be the display device 100D or the display device 100E, which will be described later.

[0453] The display module 280 has substrates 291 and 292. The display module 280 has a display unit 281. The display unit 281 is an area in the display module 280 that displays an image, and is an area in which light from each pixel provided in the pixel unit 284, which will be described later, can be seen.

[0454] Figure 37B shows a schematic perspective view illustrating the configuration of the substrate 291. On the substrate 291, a circuit section 282, a pixel circuit section 283 on the circuit section 282, and a pixel section 284 on the pixel circuit section 283 are stacked. In addition, a terminal section 285 for connecting to the FPC 290 is provided in the portion of the substrate 291 that does not overlap with the pixel section 284. The terminal section 285 and the circuit section 282 are electrically connected by a wiring section 286, which is composed of multiple wires.

[0455] The pixel section 284 has multiple pixels 284a arranged periodically. A magnified view of a single pixel 284a is shown on the right side of Figure 37B. Each pixel 284a has light-emitting devices 130a, 130b, 130c, and a light-receiving device 130d, each with a different emission color. The light-emitting and light-receiving devices can be arranged in a stripe pattern as shown in Figure 37B. Various arrangement methods for the light-emitting devices, such as a delta pattern or a pentile pattern, can also be applied.

[0456] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0457] A single pixel circuit 283a is a circuit that controls the emission of light from a light-emitting device and the light-receiving device of a single pixel 284a. For example, if a single pixel 284a has three light-emitting devices and one light-receiving device, a single pixel circuit 283a is a circuit that controls the emission of light from the three light-emitting devices and the light-receiving device. A single pixel circuit 283a may be configured to have three circuits for controlling the emission of light from one light-emitting device and one circuit for controlling the light-receiving device. For example, a single pixel circuit 283a may have at least one selection transistor, one current control transistor (drive transistor), and a capacitive element for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to either the source or the drain. This realizes an active-matrix type display device. For example, the pixel circuit 283a can be the pixel circuit described in Embodiment 1.

[0458] The circuit section 282 has circuits for driving each pixel circuit 283a of the pixel circuit section 283. For example, it is preferable to have one or both of a gate line drive circuit and a source line drive circuit. In addition, it may have at least one of the following: an arithmetic circuit, a memory circuit, and a power supply circuit.

[0459] The FPC290 functions as wiring for supplying video signals or power potential, etc., to the circuit section 282 from an external source. An IC may also be mounted on the FPC290.

[0460] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are stacked on the lower side of the pixel section 284, thereby enabling an extremely high aperture ratio (effective display area ratio) of the display section 281. For example, the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95%, and more preferably 60% or more and 95%. Furthermore, it is possible to arrange the pixels 284a at an extremely high density, enabling an extremely high resolution of the display section 281. For example, it is preferable that the pixels 284a are arranged in the display section 281 with a resolution of 500 ppi or more, preferably 1000 ppi or more, more preferably 2000 ppi or more, even more preferably 3000 ppi or more, even more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and a resolution of 20000 ppi or less, or 30000 ppi or less.

[0461] Because such a display module 280 is extremely high-resolution, it can be suitably used in VR devices such as head-mounted displays, or in glasses-type AR devices. For example, even in a configuration where the display part of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display part 281, so even when the display part is magnified with lenses, pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display parts. For example, it can be suitably used in the display part of wearable electronic devices such as wristwatches.

[0462] <Display device 100C> The display device 100C shown in Figure 38 includes a substrate 301, light-emitting devices 130a, 130b, 130c, light-receiving device 130d, capacitor 240, and transistor 310.

[0463] Substrate 301 corresponds to substrate 291 in Figures 37A and 37B.

[0464] The transistor 310 is a transistor having a channel-forming region in the substrate 301. The substrate 301 can be a semiconductor substrate such as a single-crystal silicon substrate. The transistor 310 comprises a portion of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region of the substrate 301 doped with impurities and functions as either a source or a drain. The insulating layer 314 covers the side surface of the conductive layer 311 and functions as an insulating layer.

[0465] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301.

[0466] An insulating layer 261 is provided covering the transistor 310, and a capacitance 240 is provided on the insulating layer 261.

[0467] Capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as the dielectric of the capacitor 240.

[0468] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to either the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided covering the conductive layer 241. The conductive layer 245 is provided in the region that overlaps with the conductive layer 241 via the insulating layer 243.

[0469] An insulating layer 255a is provided covering the capacitance 240, an insulating layer 255b is provided on the insulating layer 255a, and light-emitting devices 130a, 130b, 130c, and light-receiving devices 130d are provided on the insulating layer 255b. An insulator is provided in the region between adjacent light-emitting devices. For example, in Figure 38, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in this region.

[0470] A mask layer 118a is located on the EL layer 113a of the light-emitting device 130a, a mask layer 118b is located on the EL layer 113b of the light-emitting device 130b, a mask layer 118c is located on the EL layer 113c of the light-emitting device 130c, and a mask layer 118d is located on the light-receiving layer 113d of the light-receiving device 130d.

[0471] The conductive layers 111a, 111b, 111c, and 111d are electrically connected to either the source or drain of the transistor 310 by plugs 256 embedded in insulating layers 243, 255a, and 255b, a conductive layer 241 embedded in insulating layer 254, and a plug 271 embedded in insulating layer 261. The height of the top surface of insulating layer 255b and the height of the top surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0472] Furthermore, in a display device according to one aspect of the present invention, the pixel electrodes of the light-emitting element are arranged in a stacked configuration of multiple layers. For example, in the example shown in Figure 38, the pixel electrodes of the light-emitting device are arranged in a stacked configuration of conductive layer 111a, conductive layer 111b, conductive layer 111c and conductive layer 111d, and conductive layer 112a, conductive layer 112b, conductive layer 112c and conductive layer 112d. For example, if the display device 100C is a top-emission type and the pixel electrodes of the light-emitting device function as anodes, the conductive layers 111a, 111b, 111c, and 111d can be layers with a higher reflectivity to visible light than, for example, conductive layers 112a, 112b, 112c, and 112d, and the conductive layers 112a, 112b, 112c, and 112d can be layers with a larger work function than, for example, conductive layers 111a, 111b, 111c, and 111d. The higher the reflectivity to visible light of the pixel electrodes, the more effectively the light emitted by the EL layer is suppressed from passing through the pixel electrodes. Therefore, if the display device 100C is a top-emission type, the efficiency of light extraction from the EL layer increases. Also, if the pixel electrodes function as anodes, the larger the work function of the pixel electrodes, the higher the luminous efficiency of the EL layer. Based on the above, by using a stacked configuration for the pixel electrodes of a light-emitting element, consisting of conductive layers 111a, 111b, 111c, and 111d with high reflectivity for visible light, and conductive layers 112a, 112b, 112c, and 112d with a large work function, the light-emitting element can be made to have high light extraction efficiency and high luminescence efficiency.

[0473] When conductive layers 111a, 111b, 111c, and 111d are layers with a higher reflectivity to visible light than conductive layers 112a, 112b, 112c, and 112d, it is preferable that the reflectivity to visible light of conductive layers 111a, 111b, 111c, and 111d be, for example, 40% to 100% and 70% to 100%, respectively. Furthermore, conductive layers 112a, 112b, 112c, and 112d can be transparent electrodes, and their transmittance to visible light can be, for example, 40% or more.

[0474] Furthermore, the conductive layers 111a, 111b, 111c, and 111d of the light-emitting device are layers with high reflectivity to the light emitted by the EL layer. For example, if the EL layer emits infrared light, the conductive layers 111a, 111b, 111c, and 111d can be layers with high reflectivity to infrared light. Also, if the pixel electrodes of the light-emitting device function as cathodes, the conductive layers 112a, 112b, 112c, and 112d can be layers with a smaller work function than, for example, the conductive layers 111a, 111b, 111c, and 111d.

[0475] On the other hand, when the pixel electrode is constructed in a stacked configuration of multiple layers, the pixel electrode may be altered due to reactions between these layers, for example. For instance, in the fabrication of the display device 100C, when a film formed after the pixel electrode is removed by a wet etching method, the chemical solution may come into contact with the pixel electrode. When the pixel electrode is constructed in a stacked configuration of multiple layers, galvanic corrosion may occur when these layers come into contact with the chemical solution. This can cause at least one of the layers constituting the pixel electrode to be altered. Consequently, the yield of the display device may decrease, and the manufacturing cost of the display device may increase. Furthermore, the reliability of the display device may decrease.

[0476] Therefore, in the display device 100C, conductive layers 112a, 112b, 112c, and 112d are formed so as to cover the upper and side surfaces of conductive layers 111a, 111b, 111c, and 111d. This makes it possible to suppress contact between the chemical solution and the conductive layers 111a, 111b, 111c, and 111d, even when removing a film formed after the formation of a pixel electrode having conductive layers 111a, 111b, 111c, and 111d, and conductive layers 112a, 112b, 112c, and 112d, by a wet etching method. Thus, for example, the occurrence of galvanic corrosion on the pixel electrode can be suppressed. As a result, the display device 100C can be manufactured using a method with a high yield, making it a low-cost display device. Furthermore, since the occurrence of defects in the display device 100C can be suppressed, the display device 100C can be made into a highly reliable display device.

[0477] For example, metallic materials can be used as conductive layers 111a, 111b, 111c, and 111d. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used.

[0478] As conductive layers 112a, 112b, 112c, and 112d, oxides having one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use conductive oxides containing one or more of the following: indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, so it can be suitably used as conductive layers 112a, 112b, 112c, and 112d.

[0479] Furthermore, in the example shown in Figure 38, a mask layer 118a is located on the EL layer 113a of the light-emitting device 130a, a mask layer 118b is located on the EL layer 113b of the light-emitting device 130a, a mask layer 118c is located on the EL layer 113c of the light-emitting device 130c, and a mask layer 118d is located on the light-receiving layer 113d of the light-receiving device 130d. Mask layer 118a is a portion of the mask layer that was provided in contact with the upper surface of the EL layer 113a when the EL layer 113a was processed. Mask layers 118b, 118c, and 118d are similar to mask layer 118a. Thus, the display device 100C may have a portion of the mask layer used to protect the EL layer during its manufacture remaining. In the following, mask layers 118a, 118b, 118c, and 118d may be collectively referred to as mask layer 118.

[0480] In Figure 38, one end of mask layer 118a is aligned with, or approximately aligned with, the end of EL layer 113a and the end of conductive layer 112a. That is, the end of conductive layer 112a is aligned with, or approximately aligned with, the end of EL layer 113a. The same applies to mask layers 118b, 118c, and 118d as to mask layer 118a.

[0481] Furthermore, the other end of the mask layer 118a is located on the EL layer 113a. Here, it is preferable that the other end of the mask layer 118a overlaps with the conductive layer 111a. In this case, the other end of the mask layer 118a is more likely to be formed on the generally flat surface of the EL layer 113a. The same applies to the mask layers 118b, 118c, and 118d as to the mask layer 118a.

[0482] Furthermore, if the edges are aligned or roughly aligned, and the top surface shapes match or roughly match, then in a top view, at least a portion of the contours overlaps between the stacked layers. This includes, for example, cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case as well, the edges are said to be roughly aligned, or the top surface shapes roughly match.

[0483] Each side of EL layer 113a, EL layer 113b, and EL layer 113c is covered by insulating layer 125. Insulating layer 127 overlaps with each side of EL layer 113a, EL layer 113b, and EL layer 113c via insulating layer 125.

[0484] Furthermore, a portion of the upper surface of each of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d is covered by mask layers 118a, 118b, 118c, and 118d. The insulating layer 125 and insulating layer 127 overlap with a portion of the upper surface of each of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d via mask layers 118a, 118b, 118c, and 118d.

[0485] By covering a portion of the upper surface and sides of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d with at least one of the insulating layer 125, insulating layer 127, and mask layer 118 (mask layer 118a, mask layer 118b, mask layer 118c, mask layer 118d), contact between layer 114 or the common electrode 115 and the sides of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d is suppressed, thereby suppressing short circuits of the light-emitting devices 130a, 130b, 130c, and light-receiving device 130d. This improves the reliability of the light-emitting devices 130a, 130b, 130c, and light-receiving device 130d.

[0486] The film thicknesses of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d can be different. For example, it is preferable to set the film thickness to correspond to the optical path length that intensifies the light emitted by each of the EL layers 113a, EL layer 113b, and EL layer 113c. This makes it possible to realize a microcavity structure and improve the color purity of the light emitted from the pixel 110.

[0487] It is preferable that the insulating layer 125 is in contact with the respective sides of the EL layers 113a, 113b, 113c, and 113d. This prevents peeling of the EL layers 113a, 113b, 113c, and 113d. The close contact between the insulating layer 125 and the EL layers 113a, 113b, 113c, and 113d provides the effect of fixing or bonding adjacent EL layers 113a, etc., to each other. This improves the reliability of the light-emitting devices 130a, 130b, 130c, and 130d. It also improves the manufacturing yield of the light-emitting devices.

[0488] Furthermore, as shown in Figure 38, the insulating layer 125 and insulating layer 127 cover both a portion of the upper surface and the sides of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d, thereby further preventing delamination of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d, and improving the reliability of the light-emitting devices 130a, 130b, 130c, and light-receiving device 130d. In addition, the manufacturing yield of the light-emitting devices 130a, 130b, 130c, and light-receiving device 130d can be further improved.

[0489] Figure 38 shows an example where the laminated structure of the EL layer 113a, mask layer 118a, insulating layer 125, and insulating layer 127 is located on the edge of the conductive layer 112a. Similarly, the laminated structure of the EL layer 113b, mask layer 118b, insulating layer 125, and insulating layer 127 is located on the edge of the conductive layer 112b, and the laminated structure of the EL layer 113c, mask layer 118c, insulating layer 125, and insulating layer 127 is located on the edge of the conductive layer 112c.

[0490] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap with a portion of the upper surface and side surfaces of the EL layer 113a, EL layer 113b, EL layer 113c, and light-receiving layer 113d, via the insulating layer 125. Preferably, the insulating layer 127 covers at least a portion of the side surfaces of the insulating layer 125.

[0491] By providing insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, thereby reducing extreme irregularities on the surface of layers formed on the island-shaped layers (e.g., carrier injection layers and common electrodes), making them flatter. Consequently, the coverage of the carrier injection layers and common electrodes can be improved.

[0492] Furthermore, a protective layer 131 is provided on the light-emitting devices 130a, 130b, 130c, and light-receiving device 130d. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. Details of the components from the light-emitting devices to the substrate 120 can be found in the description above.

[0493] Various inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride-oxide insulating films can be suitably used as insulating layers 255a and 255b, respectively. For insulating layer 255a, it is preferable to use an oxide insulating film or oxidative nitride insulating film such as a silicon oxide film, silicon oxidative nitride film, or aluminum oxide film. For insulating layer 255b, it is preferable to use a nitride insulating film or oxidative nitride insulating film such as a silicon nitride film or silicon nitride-oxide film. More specifically, it is preferable to use a silicon oxide film as insulating layer 255a and a silicon nitride film as insulating layer 255b. It is preferable that insulating layer 255b functions as an etching protective film. Alternatively, a nitride insulating film or nitride-oxide insulating film may be used as insulating layer 255a, and an oxide insulating film or oxidative nitride insulating film may be used as insulating layer 255b. In this embodiment, an example is shown in which a recess is provided in the insulating layer 255b, but the insulating layer 255b does not necessarily have to have a recess.

[0494] The pixel electrodes of the light-emitting device are electrically connected to either the source or drain of the transistor 310 by plugs 256 embedded in insulating layers 255a and 255b, a conductive layer 241 embedded in insulating layer 254, and a plug 271 embedded in insulating layer 261. The height of the upper surface of insulating layer 255b and the height of the upper surface of plug 256 are equal or approximately equal. Various conductive materials can be used for the plugs.

[0495] Figure 39A shows an example where the side surface of the insulating layer 255b (the area enclosed by the dashed line in Figure 39A) is vertical in the region overlapping with the edge of the conductive layer 111 (111a to 111d) in Figure 38. Figure 39B shows an example where the upper surface of the insulating layer 127 has a concave shape in cross-sectional view, with the center and its vicinity recessed, i.e., a concave curved surface. Furthermore, by configuring the insulating layer 127 to have a concave curved surface in the central part as shown in Figure 39B, the stress on the insulating layer 127 can be relieved. More specifically, by providing a configuration in which the insulating layer 127 has a concave curved surface in the center, local stress generated at the edges of the insulating layer 127 can be alleviated, thereby suppressing one or more of the following: delamination between the EL layer 113a and EL layer 113b and the mask layer 118a and mask layer 118b, delamination between the mask layer 118a and mask layer 118b and the insulating layer 125, and delamination between the insulating layer 125 and the insulating layer 127.

[0496] Furthermore, to create a configuration in which the insulating layer 127 has a concave curved surface in the center, as shown in Figure 39B, exposure can be performed using a multi-gradation mask (typically a halftone mask or graytone mask). A multi-gradation mask is an exposure mask that allows for three exposure levels: an exposed area, an intermediate exposed area, and an unexposed area, resulting in transmitted light of multiple intensities. It is possible to form an insulating layer 127 with multiple (typically two) thickness regions using a single photomask (a single exposure and development process). Alternatively, to create a configuration in which the insulating layer 127 has a concave curved surface in the center, the line width of the mask located on the concave curved surface can be made smaller than the line width of the exposed area, thereby forming an insulating layer 127 with multiple thickness regions.

[0497] The method for forming the insulating layer 127 having a concave curved surface in the center is not limited to the above. For example, two photomasks may be used to create the exposed portion and the intermediate exposed portion separately. Alternatively, the viscosity of the resin material used for the insulating layer 127 may be adjusted; specifically, the viscosity of the material used for the insulating layer 127 should be 10 cP or less, preferably 1 cP or more and 5 cP or less.

[0498] Although not shown in Figure 39B, the concave curved surface in the center of the insulating layer 127 does not necessarily have to be continuous and may be interrupted between adjacent light-emitting elements. In this case, a portion of the insulating layer 127 disappears in the center of the insulating layer 127 shown in Figure 39B, and the surface of the insulating layer 125 is exposed. In this configuration, the shape of the insulating layer 127 should be such that the layer 114 and the common electrode 115 cover the insulating layer 127.

[0499] <Display device 100D> The display device 100D shown in Figure 40 differs from the display device 100C mainly in its transistor configuration. Note that explanations of parts similar to those of the display device 100C may be omitted.

[0500] Transistor 320 is an OS transistor in which a metal oxide (also called an oxide semiconductor) is applied to the semiconductor layer where the channel is formed.

[0501] The transistor 320 has a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0502] Substrate 331 corresponds to substrate 291 in Figures 37A and 37B. The laminated structure from substrate 331 to insulating layer 255b corresponds to layer 101 containing the transistor in Embodiment 1. An insulating substrate or a semiconductor substrate can be used as substrate 331.

[0503] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 to the transistor 320, and prevents oxygen from detaching from the semiconductor layer 321 to the insulating layer 332. As the insulating layer 332, for example, a film that is less susceptible to hydrogen or oxygen diffusion than a silicon oxide film can be used, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0504] A conductive layer 327 is provided on an insulating layer 332, and an insulating layer 326 is provided covering the conductive layer 327. The conductive layer 327 functions as the first gate electrode of the transistor 320, and a portion of the insulating layer 326 functions as the first gate insulating layer. It is preferable to use an oxide insulating film, such as a silicon oxide film, for at least the portion of the insulating layer 326 that is in contact with the semiconductor layer 321. It is preferable that the upper surface of the insulating layer 326 is flattened.

[0505] The semiconductor layer 321 is provided on the insulating layer 326. Preferably, the semiconductor layer 321 has a metal oxide (also called an oxide semiconductor) film having semiconductor properties.

[0506] A pair of conductive layers 325 are provided in contact with the semiconductor layer 321 and function as source and drain electrodes.

[0507] An insulating layer 328 is provided covering the top and side surfaces of a pair of conductive layers 325, as well as the side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264, etc., and to prevent oxygen from detaching from the semiconductor layer 321. An insulating film similar to that used for the insulating layer 332 can be used for the insulating layer 328.

[0508] An opening is provided in the insulating layer 328 and the insulating layer 264 that reaches the semiconductor layer 321. Inside this opening, the insulating layer 323 and the conductive layer 324 are embedded, in contact with the sides of the insulating layer 264, the insulating layer 328, and the conductive layer 325, as well as the upper surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0509] The upper surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are flattened so that their heights are the same or approximately the same, and the insulating layer 329 and insulating layer 265 are provided covering them.

[0510] Insulating layers 264 and 265 function as interlayer insulating layers. Insulating layer 329 functions as a barrier layer to prevent impurities such as water or hydrogen from diffusing into the transistor 320 from insulating layer 265, etc. As insulating layer 329, an insulating film similar to that used for insulating layers 328 and 332 can be used.

[0511] A plug 274, which is electrically connected to one of the pair of conductive layers 325, is provided so as to be embedded in the insulating layers 265, 329, and 264. Here, it is preferable that the plug 274 has a conductive layer 274a that covers the sides of the openings of the insulating layers 265, 329, 264, and 328, and a part of the upper surface of the conductive layer 325, and a conductive layer 274b that is in contact with the upper surface of the conductive layer 274a. In this case, it is preferable to use a conductive material that does not easily allow hydrogen and oxygen to diffuse as the conductive layer 274a.

[0512] The configuration from the insulating layer 254 to the substrate 120 in the display device 100D is the same as that of the display device 100C.

[0513] <Display device 100E> The display device 100E shown in Figure 41 has a configuration in which a transistor 310 with a channel formed on a substrate 301 and a transistor 320 containing a metal oxide in the semiconductor layer where the channel is formed are stacked. Note that parts that are the same as those of display devices 100C and 100D may be omitted from the explanation.

[0514] An insulating layer 261 is provided covering the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. An insulating layer 262 is provided covering the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. The conductive layers 251 and 252 each function as wiring. An insulating layer 263 and an insulating layer 332 are provided covering the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. An insulating layer 265 is provided covering the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0515] Transistor 320 can be used as a transistor constituting a pixel circuit. Transistor 310 can also be used as a transistor constituting a pixel circuit, or as a transistor constituting a drive circuit (gate line drive circuit, source line drive circuit) for driving the pixel circuit. Furthermore, transistors 310 and 320 can be used as transistors constituting various circuits such as arithmetic circuits or memory circuits.

[0516] This configuration allows for the formation of not only pixel circuits but also drive circuits directly beneath the light-emitting device, making it possible to miniaturize the display device compared to cases where the drive circuits are located around the display area.

[0517] <Display device 100F> The display device 100F shown in Figure 42 has a configuration in which transistors 310A and 310B, each with a channel formed on a semiconductor substrate, are stacked.

[0518] The display device 100F has a configuration in which a substrate 301B on which transistor 310B, capacitor 240 and each light-emitting device are provided, and a substrate 301A on which transistor 310A is provided are bonded together.

[0519] A plug 343 is provided on substrate 301B, which penetrates the substrate 301B. The plug 343 is electrically connected to a conductive layer 342 provided on the back surface of substrate 301B (the surface opposite to the substrate 120 side). On the other hand, a conductive layer 341 is provided on substrate 301A on an insulating layer 261.

[0520] The conductive layer 341 and the conductive layer 342 are joined together, thereby electrically connecting substrate 301A and substrate 301B.

[0521] It is preferable to use the same conductive material for conductive layer 341 and conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) composed of the above elements can be used. In particular, it is preferable to use copper for conductive layer 341 and conductive layer 342. This allows the application of Cu-Cu direct bonding technology (a technology that achieves electrical conductivity by connecting Cu (copper) pads to each other). The conductive layer 341 and conductive layer 342 may be bonded via bumps.

[0522] <Display device 100G> The display device 100G shown in Figure 43 has a configuration in which transistors 320A and 320B, each having an oxide semiconductor in the semiconductor where the channel is formed, are stacked.

[0523] The configuration of transistors 320A and 320B, and their surrounding components, can be based on the display device 100D described above.

[0524] In this example, we have used a configuration in which two transistors having oxide semiconductors are stacked, but this is not the only option. For example, a configuration in which three or more transistors are stacked may also be used.

[0525] <Example of transistor configuration> The following describes examples of transistor cross-sectional configurations that can be applied to the above-mentioned display device.

[0526] Figure 44A is a cross-sectional view including transistor 410.

[0527] Transistor 410 is provided on substrate 401 and is a transistor in which polycrystalline silicon is applied to the semiconductor layer. Figure 44A shows an example in which one of the source and drain of transistor 410 is electrically connected to the conductive layer 431 of the light-emitting device.

[0528] The transistor 410 has a semiconductor layer 411, an insulating layer 412, a conductive layer 413, etc. The semiconductor layer 411 has a channel-forming region 411i and a low-resistance region 411n. The semiconductor layer 411 is made of silicon. Preferably, the semiconductor layer 411 is made of polycrystalline silicon. A portion of the insulating layer 412 functions as a gate insulating layer. A portion of the conductive layer 413 functions as a gate electrode.

[0529] Furthermore, the semiconductor layer 411 may also be configured to include a metal oxide (also called an oxide semiconductor) that exhibits semiconductor properties. In this case, the transistor 410 can be called an OS transistor.

[0530] The low-resistance region 411n is a region containing impurity elements. For example, if transistor 410 is an n-channel type transistor, phosphorus, arsenic, etc., can be added to the low-resistance region 411n. On the other hand, if it is a p-channel type transistor, boron, aluminum, etc., can be added to the low-resistance region 411n. Furthermore, in order to control the threshold voltage of transistor 410, the aforementioned impurities may also be added to the channel formation region 411i.

[0531] An insulating layer 421 is provided on the substrate 401. The semiconductor layer 411 is provided on the insulating layer 421. The insulating layer 412 is provided covering the semiconductor layer 411 and the insulating layer 421. The conductive layer 413 is provided on the insulating layer 412 in a position overlapping with the semiconductor layer 411.

[0532] An insulating layer 422 is provided covering the conductive layer 413 and the insulating layer 412. Conductive layers 414a and 414b are provided on the insulating layer 422. Conductive layers 414a and 414b are electrically connected to the low-resistance region 411n at openings provided in the insulating layers 422 and 412. A portion of the conductive layer 414a functions as one of the source electrode and drain electrode, and a portion of the conductive layer 414b functions as the other of the source electrode and drain electrode. An insulating layer 423 is also provided covering the conductive layer 414a, conductive layer 414b, and insulating layer 422.

[0533] A conductive layer 431, which functions as a pixel electrode, is provided on the insulating layer 423. The conductive layer 431 is provided on the insulating layer 423 and is electrically connected to the conductive layer 414b at an opening provided in the insulating layer 423. Although not shown here, an EL layer and a common electrode can be laminated on the conductive layer 431.

[0534] Figure 44B shows a transistor 410a having a pair of gate electrodes. The transistor 410a shown in Figure 44B differs from that in Figure 44A mainly in that it has a conductive layer 415 and an insulating layer 416.

[0535] The conductive layer 415 is provided on the insulating layer 421. Furthermore, an insulating layer 416 is provided covering the conductive layer 415 and the insulating layer 421. The semiconductor layer 411 is provided such that at least the channel-forming region 411i overlaps with the conductive layer 415 via the insulating layer 416.

[0536] In the transistor 410a shown in Figure 44B, a portion of the conductive layer 413 functions as a first gate electrode, and a portion of the conductive layer 415 functions as a second gate electrode. At the same time, a portion of the insulating layer 412 functions as a first gate insulating layer, and a portion of the insulating layer 416 functions as a second gate insulating layer.

[0537] Here, when electrically connecting the first gate electrode and the second gate electrode, the conductive layer 413 and the conductive layer 415 may be electrically connected through openings provided in the insulating layer 412 and the insulating layer 416 in a region not shown. Also, when electrically connecting the second gate electrode to the source or drain, the conductive layer 414a or conductive layer 414b and the conductive layer 415 may be electrically connected through openings provided in the insulating layer 422, the insulating layer 412, and the insulating layer 416 in a region not shown.

[0538] When LTPS transistors are applied to all transistors constituting the sub-pixel 81, transistor 410 as exemplified in Figure 44A, or transistor 410a as exemplified in Figure 44B, can be applied. In this case, transistor 410a may be used for all transistors constituting the sub-pixel 81, transistor 410 may be applied to all transistors, or transistor 410a and transistor 410 may be used in combination.

[0539] The following describes an example of a configuration that includes both transistors with silicon semiconductor layers and transistors with metal oxide semiconductor layers.

[0540] Figure 44C shows a schematic cross-sectional view including transistors 410a and 450.

[0541] For transistor 410a, the above configuration example 1 can be used. Although an example using transistor 410a is shown here, a configuration with transistor 410 and transistor 450 is also possible, or a configuration with all of transistors 410, 410a, and 450 is also possible.

[0542] Transistor 450 is a transistor in which a metal oxide is applied to the semiconductor layer. The configuration shown in Figure 44C is an example in which, for example, transistor 450 corresponds to transistor 55A of the pixel circuit 81_2, and transistor 410a corresponds to transistor 55B. That is, Figure 44C is an example in which one of the source and drain of transistor 410a is electrically connected to the conductive layer 431.

[0543] Figure 44C shows an example where transistor 450 has a pair of gates.

[0544] The transistor 450 has a conductive layer 455, an insulating layer 422, a semiconductor layer 451, an insulating layer 452, a conductive layer 453, etc. A portion of the conductive layer 453 functions as the first gate of the transistor 450, and a portion of the conductive layer 455 functions as the second gate of the transistor 450. At this time, a portion of the insulating layer 452 functions as the first gate insulating layer of the transistor 450, and a portion of the insulating layer 422 functions as the second gate insulating layer of the transistor 450.

[0545] The conductive layer 455 is provided on the insulating layer 412. The insulating layer 422 covers the conductive layer 455. The semiconductor layer 451 is provided on the insulating layer 422. The insulating layer 452 covers the semiconductor layer 451 and the insulating layer 422. The conductive layer 453 is provided on the insulating layer 452 and has a region that overlaps with the semiconductor layer 451 and the conductive layer 455.

[0546] An insulating layer 426 is provided covering the insulating layer 452 and the conductive layer 453. Conductive layers 454a and 454b are provided on the insulating layer 426. Conductive layers 454a and 454b are electrically connected to the semiconductor layer 451 at openings provided in the insulating layer 426 and the insulating layer 452. A portion of the conductive layer 454a functions as one of the source electrode and drain electrode, and a portion of the conductive layer 454b functions as the other of the source electrode and drain electrode. An insulating layer 423 is also provided covering the conductive layer 454a, the conductive layer 454b, and the insulating layer 426.

[0547] Here, it is preferable that the conductive layers 414a and 414b, which are electrically connected to the transistor 410a, are formed by processing the same conductive film as conductive layers 454a and 454b. Figure 44C shows a configuration in which conductive layers 414a, 414b, 454a, and 454b are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 426) and contain the same metal element. In this case, conductive layers 414a and 414b are electrically connected to the low-resistance region 411n through openings provided in the insulating layer 426, insulating layer 452, insulating layer 422, and insulating layer 412. This is preferable because it simplifies the manufacturing process.

[0548] It is preferable that the conductive layer 413, which functions as the first gate electrode of transistor 410a, and the conductive layer 455, which functions as the second gate electrode of transistor 450, are formed by processing the same conductive film. Figure 44C shows a configuration in which the conductive layer 413 and the conductive layer 455 are formed on the same plane (i.e., in contact with the upper surface of the insulating layer 412) and contain the same metal element. This is preferable because it simplifies the manufacturing process.

[0549] In Figure 44C, the insulating layer 452, which functions as the first gate insulating layer of the transistor 450, is configured to cover the edge of the semiconductor layer 451. However, as shown in the transistor 450a in Figure 44D, the insulating layer 452 may be processed so that its upper surface shape matches or roughly matches that of the conductive layer 453.

[0550] In this specification, "approximately matching top surface shapes" means that at least a portion of the contours overlap between stacked layers. For example, this includes cases where the upper and lower layers are processed with the same mask pattern, or partially with the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; in this case, too, it is said that the "top surface shapes are approximately matching."

[0551] In this example, transistor 410a corresponds to transistor 55B and is electrically connected to the pixel electrode, but this is not the only example. For example, transistor 450 or transistor 450a may correspond to transistor 55B. In this case, transistor 410a corresponds to transistor 55A, transistor 55C, or other transistors.

[0552] This embodiment can be combined with other embodiments as appropriate.

[0553] (Embodiment 7) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 45 to 47.

[0554] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0555] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0556] In particular, a display device according to one aspect of the present invention can be used suitably in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as VR devices such as head-mounted displays, AR devices such as glasses, and MR devices.

[0557] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0558] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0559] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0560] The electronic device 6500 shown in Figure 45A is a portable information terminal that can be used as a smartphone.

[0561] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0562] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0563] Figure 45B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0564] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0565] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0566] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0567] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0568] Figure 46A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0569] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0570] The television device 7100 shown in Figure 46A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0571] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0572] Figure 46B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0573] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0574] Figures 46C and 46D show examples of digital signage.

[0575] The digital signage 7300 shown in Figure 46C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0576] Figure 46D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0577] In Figures 46C and 46D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0578] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0579] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0580] As shown in Figures 46C and 46D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411, such as a smartphone, owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0581] The digital signage 7300 or digital signage 7400 can also be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0582] The electronic equipment shown in Figures 47A to 47F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0583] The electronic devices shown in Figures 47A to 47F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0584] Details of the electronic equipment shown in Figures 47A to 47F will be explained below.

[0585] Figure 47A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 47A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050, etc., may be displayed in the position where the information 9051 is displayed.

[0586] Figure 47B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0587] Figure 47C is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0588] Figures 47D to 47F are perspective views showing a foldable personal information terminal 9201. Figure 47D shows the personal information terminal 9201 in an unfolded state, Figure 47F shows it in a folded state, and Figure 47E shows a perspective view of the state in between, transitioning from one of Figures 47D or 47F to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0589] This embodiment can be combined with other embodiments as appropriate.

[0590] <Notes regarding the description in this specification, etc.> The above embodiments and a description of each component in those embodiments are provided below.

[0591] The configurations shown in each embodiment can be appropriately combined with the configurations shown in other embodiments to form one aspect of the present invention. Furthermore, if multiple configuration examples are shown within a single embodiment, these configuration examples can be appropriately combined.

[0592] Furthermore, the content described in one embodiment (even if only a part of it) can be applied to, combined with, or substituted for other content described in the same embodiment (even if only a part of it), and / or content described in one or more other embodiments (even if only a part of it).

[0593] The content described in the embodiments refers to the content described using various figures or the content described using text in the specification in each embodiment.

[0594] Furthermore, a diagram (even a part of it) described in one embodiment can be combined with another part of that diagram, another diagram (even a part of it) described in that embodiment, and / or a diagram (even a part of it) described in one or more other embodiments to form even more diagrams.

[0595] Furthermore, in this specification, block diagrams classify components by function and show them as independent blocks. However, in actual circuits, it is difficult to separate components by function, and there may be cases where multiple functions are involved in a single circuit, or where a single function is involved across multiple circuits. Therefore, the blocks in the block diagrams are not limited to the components described in the specification, and can be appropriately rephrased depending on the situation.

[0596] Furthermore, in the drawings, the size, layer thickness, or area are shown at arbitrary sizes for the sake of explanation. Therefore, they are not necessarily limited to that scale. Also, the drawings are schematic for clarity and are not limited to the shapes or values ​​shown in the drawings. For example, they may include variations in signals, voltages, or currents due to noise, or variations in signals, voltages, or currents due to timing differences.

[0597] In this specification and other documents, when describing the connections of a transistor, the terms "one of the source or drain" (or first electrode or first terminal) and "the other of the source or drain" (or second electrode or second terminal) are used. This is because the source and drain of a transistor vary depending on the transistor's structure or operating conditions. The terms source and drain of a transistor can be appropriately rephrased as source (drain) terminal or source (drain) electrode, depending on the context.

[0598] Furthermore, the terms "electrode" and "wiring" in this specification do not functionally limit these components. For example, "electrode" may be used as part of "wiring," and vice versa. Moreover, the terms "electrode" and "wiring" also include cases where multiple "electrodes" and "wiring" are formed as a single unit.

[0599] Furthermore, in this specification, voltage and potential may be used interchangeably as appropriate. Voltage is the potential difference from a reference potential; for example, if the reference potential is the ground voltage (earth voltage), then voltage can be replaced with potential. Ground potential does not necessarily mean 0V. Note that potential is relative, and depending on the reference potential, it may change the potential applied to wiring, etc.

[0600] In this specification, terms such as "film" and "layer" may be interchanged depending on the context or situation. For example, the term "conductive layer" may be changed to "conductive film." Or, for example, the term "insulating film" may be changed to "insulating layer."

[0601] In this specification, a switch refers to a device that has the function of controlling whether or not to allow current to flow by being in a conductive state (on state) or a non-conductive state (off state). Alternatively, a switch refers to a device that has the function of selecting and switching the path through which current flows.

[0602] In this specification, channel length refers, for example, to the distance between the source and drain in the region where the semiconductor (or the part of the semiconductor through which current flows when the transistor is ON) and the gate overlap in a top view of a transistor, or in the region where the channel is formed.

[0603] In this specification, channel width refers, for example, to the length of the region where the semiconductor (or the part of the semiconductor through which current flows when the transistor is ON) and the gate electrode overlap, or the region in which the channel is formed, where the source and drain face each other.

[0604] In this specification, "A and B are connected" includes not only those that are directly connected, but also those that are electrically connected. Here, "electrically connected" means that when there is an object between A and B that has some kind of electrical effect, it enables the exchange of electrical signals between A and B. [Explanation of Symbols]

[0605] 10: Display device, 20: Correction circuit, 21: Video data correction circuit, 22: Touch detection circuit, 23: Memory circuit, 71: Display unit, 72: Signal line drive circuit, 73: Gate line drive circuit, 74: Control line drive circuit, 75: Signal readout circuit, 80: Pixel, 81B: Sub-pixel, 81G: Sub-pixel, 81R: Sub-pixel, 82PS: Sub-pixel

Claims

[Claim 1] It has a display unit and a correction circuit, The display unit has a plurality of pixels, Each of the plurality of pixels has a first sub-pixel having a light-emitting device and a second sub-pixel having a light-receiving device. The correction circuit described above is When the first sub-pixel is not illuminated, an offset corresponding to the current flowing through the second sub-pixel is obtained. In each of the multiple pixels, when correction video data is input to the first sub-pixel, data corresponding to the current flowing through the second sub-pixel is acquired, and correction output data is acquired by correcting the data with the offset. The relationship between the correction video data and the correction output data is approximated by a quadratic equation, and the coefficients of the quadratic equation are calculated. A correction table is created based on the correction output data and the coefficients. A display device having a function to correct display video data using the correction table, It has a first conductive layer, an EL layer, a second conductive layer, a light-receiving layer, a first insulating layer, a second insulating layer, a common layer, and a common electrode. The first conductive layer functions as one electrode of the light-emitting device. The EL layer has a region located above the first conductive layer, The second conductive layer functions as one electrode of the light-receiving device. The light-receiving layer has a region located above the second conductive layer, The first insulating layer is arranged to have a region in contact with the side surface of the first conductive layer, a region in contact with the side surface of the EL layer, a region in contact with the side surface of the second conductive layer, and a region in contact with the side surface of the light-receiving layer. The first insulating layer has a shape in which the upper surface has a recess in the region sandwiched between the first conductive layer and the second conductive layer. The second insulating layer is positioned above the first insulating layer and is positioned to fill the recesses of the first insulating layer. The common layer has a region located above the EL layer, a region located above the first insulating layer, a region located above the second insulating layer, and a region located above the light-receiving layer. The aforementioned common layer has a region that functions as a carrier injection layer, The common electrode has a first region that overlaps with the EL layer via a part of the common layer, and a second region that overlaps with the light-receiving layer via another part of the common layer. The first region functions as the other electrode of the light-emitting device, The second region is a display device that functions as the other electrode of the light-receiving device.

Images