Simulation device and program

Abstract

To provide an advantageous simulation technique to reduce a time required to determine a parameter set for a film formation process.SOLUTION: A simulation device that predicts the behavior of a curable composition during film formation processing includes a processing unit that performs a behavior calculation of the curable composition using a calculation method selected from a first calculation method and a second calculation method that reduces a calculation time compared to the first calculation method. The processing unit executes behavior calculation of the curable composition by a second calculation method by applying each of a plurality of temporary parameter sets of the film formation processing, determines a parameter set whose behavior calculation result satisfies a predetermined evaluation criterion among each of the plurality of temporary parameter sets, and calculates the behavior of the curable composition using the first calculation method by applying the determined parameter set.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a simulation apparatus and a program. [Background Art]

[0002] There is a film forming technique of forming a film made of a curable composition on a substrate by disposing a curable composition on the substrate, bringing the curable composition into contact with a mold, and curing the curable composition. Such a film forming technique is applied to imprint technology and planarization technology. In imprint technology, using a mold having a pattern region, the curable composition on the substrate is brought into contact with the pattern region of the mold to cure the curable composition, whereby the pattern of the mold is transferred to the curable composition on the substrate. In planarization technology, using a mold having a flat surface, the curable composition on the substrate is brought into contact with the flat surface to cure the curable composition, whereby a film having a flat upper surface is formed.

[0003] The curable composition is disposed on the substrate in the form of droplets, after which the mold is pressed against the droplets of the curable composition. As a result, the droplets of the curable composition on the substrate spread to form a film of the curable composition. At this time, it is important to form a film of the curable composition having a uniform thickness and to prevent air bubbles from remaining in the film, and to achieve this, the arrangement of the droplets of the curable composition, and the method and conditions for pressing the mold against the curable composition are adjusted. When such adjustment is realized through trial and error using an apparatus, enormous time and cost are required. Therefore, the use of a simulator that supports such adjustment is desired.

[0004] Patent Document 1 describes a simulation method that is advantageous for calculating the behavior of a curable composition in a process of forming a film of the curable composition in a shorter time. Calculation speed is increased by defining a calculation grid composed of a plurality of calculation elements such that a plurality of droplets of the curable composition are accommodated in one calculation element, and obtaining the behavior of the curable composition in each calculation element according to a model corresponding to the state of the curable composition in each calculation element.

[0005] Thus, the increased speed of calculations allows for the active use of simulations in the adjustment process, reducing the effort required for trial and error with actual equipment. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2020-123719 [Overview of the project] [Problems that the invention aims to solve]

[0007] In film formation equipment such as imprint machines, there is a step before the mass production process in which the amount and arrangement of droplets (drops) of the curable composition to be supplied to the substrate are determined as a drop recipe. To verify the quality of the drop recipe, an actual imprint is performed to check for any unfilled areas or leakage of the curable composition. To determine the drop recipe, this verification process is usually performed multiple times while changing the parameters of the drop recipe.

[0008] To reduce the number of verification steps, one method is to determine the drop recipe using simulation. Since the quality of the drop recipe can be predicted by calculation without actually performing imprinting, the number of imprints is reduced, and the time required to determine the parameter set, which is the set of imprint conditions, is shortened.

[0009] The procedure for determining the drop recipe through filling simulation involves multiple loops where the calculation results are referenced to create the next calculation conditions and the calculation is performed again. Therefore, widening the search range for placement and quantity increases the number of calculations, leading to the problem of time-consuming determination.

[0010] Conventional filling simulations primarily involve coupled analysis of the fluid structure, specifically the flow of the composition and mold deformation. This analysis considers multiple physical phenomena to improve calculation accuracy. However, coupled calculations considering multiple physical phenomena tend to have longer computation times per run. Since high-precision calculations are not always necessary when determining the optimal placement and quantity of drops, it is desirable to shorten the computation time per run using a simplified calculation method.

[0011] This invention provides a simulation technique that is advantageous for reducing the time required to determine the parameter set for a film formation process. [Means for solving the problem]

[0012] According to one aspect of the present invention, a simulation apparatus for predicting the behavior of a curable composition in a film formation process in which a film of the curable composition is formed on a substrate by bringing a plurality of droplets of the curable composition placed on the substrate into contact with a mold, the apparatus having a processing unit that performs a calculation of the behavior of the curable composition by a calculation method selected from a first calculation method and a second calculation method which shortens the calculation time compared to the first calculation method, the processing unit each of a plurality of provisional parameter sets of the film formation process About The behavior calculation of the curable composition is performed using the second calculation method, and each of the plurality of provisional parameter sets Corresponding Results of the aforementioned behavioral calculation Based on, A simulation apparatus is provided, characterized by determining a set of parameters that satisfy predetermined evaluation criteria, and applying the determined set of parameters to perform a calculation of the behavior of the curable composition using the first calculation method. [Effects of the Invention]

[0013] According to the present invention, it is possible to provide a simulation technique that is advantageous for shortening the time required to determine the parameter set for the film formation process. [Brief explanation of the drawing]

[0014] [Figure 1] A diagram showing the configuration of a film formation apparatus and an information processing apparatus. [Figure 2] A diagram illustrating the two calculation modes available in the simulation program. [Figure 3] A flowchart illustrating the calculation procedure for the simulation in the first embodiment. [Figure 4] A figure showing an example of a GUI in the second embodiment. [Figure 5] A flowchart illustrating the calculation procedure for the simulation in the third embodiment. [Modes for carrying out the invention]

[0015] The embodiments will be described in detail below with reference to the attached drawings. Note that the following embodiments do not limit the invention as defined in the claims. While the embodiments describe multiple features, not all of these features are essential to the invention, and the features may be combined in any way. Furthermore, in the attached drawings, identical or similar configurations are given the same reference numerals, and redundant descriptions are omitted.

[0016] <First Embodiment> Figure 1 is a schematic diagram showing the configuration of a film forming apparatus IMP and an information processing apparatus 1 in an embodiment of the present invention. The film forming apparatus IMP performs a film forming process in which a film of the curable composition IM is formed in the space between the substrate S and the mold M by bringing into contact a mold M with a plurality of droplets of the curable composition IM placed on a substrate S. The film forming apparatus IMP may be configured as, for example, an imprint apparatus or as a planarizing apparatus. Here, the substrate S and the mold M are interchangeable, and a film of the curable composition IM may be formed in the space between the mold M and the substrate S by bringing into contact a plurality of droplets of the curable composition IM placed on the mold M with the substrate S.

[0017] In an imprint apparatus, the pattern of a mold M having a pattern is transferred to a curable composition IM on a substrate S using the mold M. In the imprint apparatus, the mold M having a pattern region PR provided with the pattern is used. In the imprint apparatus, as an imprint process, the curable composition IM on the substrate S is brought into contact with the pattern region PR of the mold M, the space between the region of the substrate S where a pattern is to be formed and the mold M is filled with the curable composition IM, and then the curable composition IM is cured. Accordingly, the pattern of the pattern region PR of the mold M is transferred to the curable composition IM on the substrate S. In the imprint apparatus, for example, a pattern formed of a cured product of the curable composition IM is formed in each of a plurality of shot regions of the substrate S.

[0018] In a planarization apparatus, as a planarization process, a mold M having a flat surface is used, the curable composition IM on the substrate S is brought into contact with the flat surface of the mold M, and the curable composition IM is cured, thereby forming a film having a flat top surface. In the planarization apparatus, when a mold M having a dimension (size) covering the entire area of the substrate S is used, a film formed of a cured product of the curable composition IM is formed over the entire area of the substrate S. In the present embodiment, in order to provide a specific example, a case where the film forming apparatus IMP is an imprint apparatus will be described.

[0019] As the curable composition, a material that is cured when energy for curing is applied is used. As the energy for curing, electromagnetic waves, heat, or the like is used. The electromagnetic waves include, for example, light having a wavelength selected from a range of 10 nm or more and 1 mm or less, specifically infrared rays, visible light, ultraviolet rays, and the like. As described above, the curable composition is a composition that is cured by light irradiation or heating. A photocurable composition that is cured by light irradiation contains at least a polymerizable compound and a photopolymerization initiator, and may further contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, a polymer component, and the like. The viscosity of the curable composition (viscosity at 25° C.) is, for example, 1 mPa·s or more and 100 mPa·s or less.

[0020] As the material for the substrate, for example, glass, ceramics, metals, semiconductors, resins, etc. are used. If necessary, a member made of a material different from that of the substrate may be provided on the surface of the substrate. The substrate includes, for example, a silicon wafer, a compound semiconductor wafer, and quartz glass.

[0021] In this specification and the accompanying drawings, directions are indicated by an XYZ coordinate system in which a direction parallel to the surface of a substrate S is defined as an XY plane. Directions parallel to the X-axis, Y-axis and Z-axis in the XYZ coordinate system are defined as an X-direction, a Y-direction and a Z-direction, and rotations about the X-axis, rotations about the Y-axis and rotations about the Z-axis are defined as θX, θY and θZ, respectively. Control or driving relating to the X-axis, Y-axis and Z-axis means control or driving relating to directions parallel to the X-axis, directions parallel to the Y-axis and directions parallel to the Z-axis, respectively. Further, control or driving relating to the θX axis, θY axis and θZ axis means control or driving relating to rotation about an axis parallel to the X-axis, rotation about an axis parallel to the Y-axis and rotation about an axis parallel to the Z-axis, respectively. Further, position is information specified based on coordinates of the X-axis, Y-axis and Z-axis, and posture is information specified by values of the θX axis, θY axis and θZ axis. Positioning means controlling the position and / or posture.

[0022] A film forming apparatus IMP comprises: a substrate holding part SH that holds a substrate S; a substrate driving mechanism SD that moves the substrate S by driving the substrate holding part SH; and a support base SB that supports the substrate driving mechanism SD. The film forming apparatus IMP also comprises a mold holding part MH that holds a mold M, and a mold driving mechanism MD that moves the mold M by driving the mold holding part MH.

[0023] The substrate drive mechanism SD and the mold drive mechanism MD constitute a relative movement mechanism that moves at least one of the substrate S and the mold M so that the relative positions of the substrate S and the mold M are adjusted. The adjustment of the relative positions of the substrate S and the mold M by such a relative movement mechanism includes driving for contact between the curable composition IM on the substrate S and the mold M, and driving for separation of the mold M from the cured curable composition IM on the substrate S. The adjustment of the relative positions of the substrate S and the mold M by the relative movement mechanism also includes alignment of the substrate S and the mold M. The substrate drive mechanism SD is configured to drive the substrate S with respect to a plurality of axes (e.g., three axes: X, Y, and θZ axes, preferably six axes: X, Y, Z, θX, θY, and θZ axes). The mold drive mechanism MD is configured to drive the mold M with respect to a plurality of axes (e.g., three axes: Z, θX, and θY axes, preferably six axes: X, Y, Z, θX, θY, and θZ axes).

[0024] The film forming apparatus IMP has a curing unit CU for curing the curable composition IM filled in the space between the substrate S and the mold M. The curing unit CU cures the curable composition IM on the substrate S by, for example, supplying curing energy to the curable composition IM through the mold M.

[0025] The film forming apparatus IMP has a permeable member TR for forming a space SP on the back side of the mold M (the side opposite the surface facing the substrate S). The permeable member TR is made of a material that allows curing energy from the curing section CU to pass through, enabling the curing energy to be supplied to the curable composition IM on the substrate S.

[0026] The film deposition apparatus IMP has a pressure control unit PC that controls the deformation of the mold M in the Z-axis direction by controlling the pressure in the space SP. For example, by making the pressure control unit PC higher than atmospheric pressure in the space SP, the mold M deforms into shape toward the substrate S.

[0027] The film forming apparatus IMP has a dispenser DSP for placing, supplying, or distributing the curable composition IM onto a substrate S. However, the film forming apparatus IMP may be supplied (imported) with a substrate S on which the curable composition IM has been placed by another apparatus. In this case, the film forming apparatus IMP does not need to have a dispenser DSP.

[0028] The film deposition apparatus IMP may have an alignment scope AS for measuring the misalignment (alignment error) between the substrate S (or the shot area of ​​the substrate S) and the mold M.

[0029] The information processing device 1, which functions as a simulation device, performs calculations to predict the behavior of the curable composition IM in the process to be carried out in the film formation apparatus IMP. Specifically, the information processing device 1 performs calculations to predict the behavior of the curable composition IM in the process of bringing multiple droplets of the curable composition IM placed on a substrate S into contact with a mold M and forming a film of the curable composition IM in the space between the substrate S and the mold M.

[0030] The information processing device 1 is configured, for example, by incorporating a simulation program 21 into a general-purpose or dedicated computer. Alternatively, the information processing device 1 may be configured using a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit).

[0031] In this embodiment, the information processing device 1 may be composed of a computer having a processor 10, a memory 20, a display 30, and an input device 40. The memory 20 stores a simulation program 21 for predicting the behavior of the curable composition IM in the film formation process. The processor 10 can perform a simulation to predict the behavior of the curable composition IM in the film formation process by reading and executing the simulation program 21 stored in the memory 20. The memory 20 may be a semiconductor memory, a disk such as a hard disk, or another form of memory. The simulation program 21 may be stored in a memory medium readable by the computer, or it may be provided to the information processing device 1 via communication equipment such as a telecommunications line.

[0032] The processor 10 can function as an acquisition unit to acquire a parameter set for the film formation process. The processor 10 can also function as a processing unit to determine the behavior of the curable composition through simulation calculations based on the parameter set. Furthermore, the processor 10 can function as a display control unit to control the display unit (display 30) to display a simulation image that simulates the behavior of the curable composition obtained through the simulation calculations.

[0033] Figure 2 illustrates the two calculation modes of the simulation program 21 in this embodiment. These two calculation modes include a mode that calculates according to a first calculation method and a mode that calculates according to a second calculation method, each with its own characteristics. The first calculation method is a method for calculating the filling process with high accuracy and is executed as detailed calculation mode 201. The second calculation method is a method for calculating the filling process at high speed and is executed as high-speed calculation mode 202. The calculation time is reduced according to the second calculation method compared to the first calculation method. Figure 2(a) shows a schematic configuration diagram of the simulation program 21 including the detailed calculation mode 201 and the high-speed calculation mode 202.

[0034] One of the purposes of installing the simulation program 21 on the information processing device 1 is to determine the optimal parameter set for the film formation process at low cost and in a short time. For example, in the process of forming a film by filling a mold M and a substrate S with a curable composition IM, if the film is cured while air bubbles remain in the film, it will result in defects. Therefore, the optimal parameter set is a parameter set for the film formation process in the simulation that minimizes the amount of gas remaining in the film. In this embodiment, the explanation will be based on the film formation apparatus IMP, so the parameter set will be explained as a parameter set that defines the imprint conditions.

[0035] Parameter set 203 is a set of parameters for the film formation process necessary for calculations used in the simulation program 21. Possible parameters include, for example, model information for the mold M, model information for the substrate S, the pressing force of the drive mechanism MD, the pressure generated in the space SP, and the droplet arrangement and droplet volume of the curable composition IM. The above parameters are representative examples, and other parameters are also possible. Parameter set 203 can be managed as a single file. This file may be stored in the memory 20 of the information processing device 1 or on an external server. Therefore, in this case, "multiple parameter sets" can be managed as multiple files. Each parameter included in parameter set 203 may be manually entered by an operator via an input screen.

[0036] One method for determining the parameter set 203 involves actually performing imprints and determining it through trial and error. Specifically, multiple provisional parameter sets are prepared, and imprints are performed using mold M and substrate S, applying each provisional parameter set. Subsequently, the optimal parameter set is determined by measuring the defects that occur in the film of the generated curable assembly IM. This method is highly reliable because it involves actually creating a film and checking for defects with an inspection machine. However, it has problems in terms of cost and time, such as the procurement of materials for imprinting and the process of checking with an inspection device located outside the information processing device 1.

[0037] In the simulation using the simulation program 21, the processor 10 obtains the information necessary for the calculation by referring to the provisional parameter set. For example, the processor 10 obtains information such as the dimensions and material of the mold M and substrate S from the model information of the mold M and substrate S included in the provisional parameter set. The processor 10 also obtains information about the operation sequence of the mold drive mechanism MD from the information of the imprinting force of the drive mechanism MD and the pressure generated in the space SP included in the provisional parameter set. Furthermore, the processor 10 obtains the position information and amount of the droplets to be calculated from the information such as the arrangement and amount of multiple droplets of the curable composition IM included in the provisional parameter set. The processor 10 calculates and simulates the imprint process from the information thus obtained. Since actual imprinting is not required, it is possible to determine the final parameter set 203 at a low cost and in a short time.

[0038] Next, the two calculation modes provided by the simulation program 21 will be explained in detail. In each calculation mode, the processor 10 creates a computation grid 204 to calculate the physical phenomenon. The computation grid 204 is used to discretize the mathematical model representing the phenomenon to be calculated. Since the computation grid 204 that can be calculated differs depending on the physical phenomenon to be calculated, multiple computation grids 204 must be prepared when calculating multiple physical phenomena. Therefore, the type of computation grid prepared differs depending on the calculation mode. In addition, even when using the same computation grid 204, the range to be calculated may differ depending on the calculation mode.

[0039] In detailed calculation mode 201, processor 10 performs physical calculations that target many of the physical phenomena assumed in the filling simulation. To perform these multiple physical calculations, processor 10 uses three calculation grids 204. An example of a physical phenomenon calculated by calculation grid A204a is the behavior of droplets of the curable composition IM. An example of a physical phenomenon calculated by calculation grid B204b is the deformation (bending) of mold M. An example of a physical phenomenon calculated by calculation grid C204c is the pressure in the closed space SP on the back surface of mold M. Note that the physical phenomena calculated by each calculation grid 204 are examples shown for illustrative purposes, and in actual calculations, calculations other than those introduced here will also be performed.

[0040] In detailed calculation mode 201, multiple physical phenomena are calculated in a coupled manner. For example, in detailed calculation mode 201, the behavior calculation includes a coupled calculation to determine the relationship between the behavior of droplets of the curable composition IM, the deformation of the mold M, and the pressure in the closed space SP on the back surface of the mold M. Specifically, coupled calculations are performed on computational grids A204a and B204b, and on computational grids B204b and C204c. These coupled calculations allow different physical phenomena in computational grid 204 to influence each other, improving the prediction accuracy of the simulation. However, coupled calculations tend to take longer because they involve multiple linear calculations through iteration.

[0041] In detailed calculation mode 201, the evaluation region 205, as exemplified in Figure 2(b), is set to cover the entire pattern region PR. The evaluation region 205 here refers to the range in which the simulation program 21 evaluates the results for planes in the X and Y directions. When discussing the range to be evaluated by the simulation program 21, the size of the range to be calculated will be discussed based on the evaluation region 205 limited to the X and Y directions. Note that the creation range of the calculation grid 204 changes depending on the range of the evaluation region 205. For example, in calculation grid A204a, the range to be calculated changes depending on the droplets of the curable composition IM to be calculated.

[0042] Refer to Figure 2(b) for the evaluation region in detailed calculation mode 201. 2 The range of 05a will be explained. Figure 2(b) is a view of type M from the -Z direction. The evaluation region 205 in detailed calculation mode 201 is the evaluation region 2 Let's call it 05a. Note that in Figure 2(b), the boundary between the pattern region PR and the computation grid A204a is shown as overlapping. Evaluation region 2 05a is set to the range that includes all droplets of the curable composition IM. Specifically, in order to distribute the droplets of the curable composition IM within the range of the pattern area PR, the evaluation area 2 05a is defined as the entire pattern region PR. In the example calculation grid A204a, the calculation range is all droplets of the curable composition IM, so a calculation grid A204a containing all droplets is created. By including all droplets in the calculation in this way, the influence of all droplets can be considered when calculating the deformation shape of the mold M. This allows for a more accurate determination of the deformation of the mold M, thus improving calculation accuracy.

[0043] As explained above, measures are taken in detailed calculation mode 201 to improve calculation accuracy, but a drawback of improving calculation accuracy is that the calculation time increases.

[0044] Next, we will explain the other calculation mode, the high-speed calculation mode 202. In high-speed calculation mode 202, the calculation speed is increased by limiting the calculation content based on the detailed calculation mode 201. Specifically, in high-speed calculation mode 202, the arrangement and amount of the curable composition IM are considered as items, and calculations are performed focusing on the generation of bubbles that occur in the film of the curable composition IM. This calculation method is effective in processes such as fine-tuning. For example, high-speed calculation mode 202 is effective for applications such as focusing on bubbles that occur in the film of the curable composition IM at a specific location, fine-tuning the droplet arrangement and droplet amount of the curable composition film IM, and checking the increase or decrease in gas generated within the film of the curable composition IM. By preparing multiple parameter sets 203 with different droplet arrangements and droplet amounts of the curable composition IM, and performing calculations using each of the multiple parameter sets 203 in high-speed calculation mode 202, it is possible to quantitatively compare the information on generated bubbles. In this embodiment, for the sake of simplicity, the following explanation will focus on changing the droplet arrangement.

[0045] In high-speed calculation mode 202, the calculation time is shortened by replacing the calculation method used in detailed calculation mode 201 with a simpler calculation method. If we limit ourselves to observing bubble containment, the calculation regarding the behavior of droplets in calculation grid A204a is essential, and therefore calculations in calculation grid A204a are mandatory. However, among calculation grids B204b and C204c, the physical phenomenon that is strongly related to bubble generation is the deflection calculation that calculates the deformation shape of mold M. The deflection calculation of mold M is performed in calculation grid B204b, but in order to perform the calculation accurately, coupled calculations with calculation grids A204a and C204c are required, which takes a lot of time compared to other calculations. Therefore, in high-speed calculation mode 202, the calculation time can be shortened (the amount of computation is reduced) by calculating the deflection distribution of mold M using equation 206 instead of these coupled calculations. For example, since mold M deforms into a convex shape toward the substrate S, contact with the curable resin IM begins from the center of mold M. The contact area is determined by the positional information of the drive mechanism MD relative to the substrate S. The contact area is considered a fixed part that does not deform, and the non-contact area is considered the calculation target that deforms. Furthermore, it is assumed that the pressure applied to the space SP is uniformly distributed over the calculation target part of mold M. By considering this, the deflection distribution of mold M can be expressed by equation 206 by applying the formula for the deflection of a disk. By applying the parameters of mold M to this predetermined model equation, equation 206, the deformation of mold M can be easily calculated.

[0046] In this embodiment, an example of substitution using formula 206 is shown, but the deflection (deformation) of the mold can also be predicted using previously obtained results of deflection calculations of mold M performed in the past or measurement results of the deflection of mold M. Specifically, the calculation results or measurement results are registered as a database in memory 20 and referred to. This simplifies the calculation and reduces the calculation time.

[0047] In one example, high-speed calculation mode 202 reduces the number of physical calculations to be performed, thereby shortening the calculation time. As mentioned above, by applying the formula for disk deflection and calculating the deflection distribution of type M using equation 206, calculation grids B204b and C204c are omitted. This means that the calculation of the pressure in the closed space SP on the back surface of type M, which was calculated in calculation grid C204c, is omitted, and the time required for that omitted calculation is shortened. In this way, high-speed calculation mode 202 can shorten the calculation time by reducing the number of physical quantities to be calculated.

[0048] In one example, in high-speed calculation mode 202, the calculation time can be reduced by limiting the evaluation region 205 to a local area. That is, the calculation time is reduced by limiting the evaluation region of the behavior calculation by the second calculation method to a part of the evaluation region of the behavior calculation by the first calculation method. The evaluation region 205 in high-speed calculation mode 202 is an evaluation region as illustrated in Figure 2(b). 2 Set to 05b. In detailed calculation mode 201, the evaluation area 2 While setting 05a to the entire pattern area PR increased the amount of computational information, high-speed calculation mode 202 shortens the time required for calculation by limiting the target of evaluation. Specifically, while detailed calculation mode 201 evaluated all droplets of the curable composition IM, high-speed calculation mode 202 evaluates only droplets near the area of ​​interest, as shown in Figure 2(b). 2 Specify 05b. For example, areas where bubbles are likely to form, such as droplet placement, the shape of type M or substrate S, and the corners of the pattern area PR, are evaluated. 2 It may be designated as 05b. Furthermore, the location where bubbles that cause problems in measurements by defect inspection equipment or other analyses occur may be considered part of the evaluation area. 2 It may be specified as 05b. In the calculation grid A204a given as an example when describing the detailed calculation mode 201, the range of droplets to be evaluated is limited to droplets of curable composition IM within this range, so the calculation grid A204a becomes smaller. A smaller calculation grid A204a means that the calculation time is also reduced.

[0049] As explained above, the high-speed calculation mode 202 significantly speeds up calculations compared to the detailed calculation mode 201 by reducing the number of physical calculations to be performed, replacing the calculations in the calculation grid 204 with simpler calculation methods, and limiting the evaluation region 205 to a local area. This allows for quick comparison of the quantities related to bubble defects between drop recipes.

[0050] In this embodiment, as mentioned above, the focus is on determining the droplet arrangement of the curable composition IM, and therefore the time reduction method described above is employed. The high-speed calculation mode 202 is used by changing the time reduction method according to the parameter set 203.

[0051] The terms "detailed" and "high-speed" used here refer to the two calculation modes introduced in this embodiment, and are names given in comparison to each other. For example, the detailed calculation mode 201 may be positioned as the standard calculation mode that the simulation program 21 would normally execute. In that case, a mode that improves the calculation speed by imposing restrictions on that standard calculation mode, thereby reducing calculation accuracy but improving calculation speed, may be understood as the high-speed calculation mode.

[0052] Multiple parameter sets 203 with different parameters are prepared, and the simulation program 21 performs calculations for each of the multiple parameter sets 203.

[0053] If there is only one calculation mode, the total calculation time will increase in proportion to the number of calculations. In contrast, by performing all calculations in a calculation mode that completes calculations in a short time, such as the high-speed calculation mode 202, it is possible to narrow down the parameter set, which is the imprint condition that should be calculated in a calculation mode that takes more time, such as the detailed calculation mode. For example, if the calculation time in the detailed calculation mode is about 2 hours and the calculation time in the high-speed calculation mode is about 1 minute, the reduction in time is obvious. Therefore, by providing and using two calculation modes as in this embodiment, the total calculation time can be reduced.

[0054] Figure 3 is a flowchart illustrating the simulation calculation procedure in this embodiment. In this flowchart, each of the multiple parameter sets is applied to the high-speed calculation mode 202 to perform a high-speed calculation, and based on the results, the parameter set to be applied to the detailed calculation mode 201 is determined. The contents of parameter set 203 are the same as those described in Figure 2 above.

[0055] Furthermore, the flow shown in Figure 3 is well-suited for automated execution via program processing. If a file that can describe a series of configuration information and work procedures, such as a sequence file, can be prepared, using a sequence file for automated execution will improve work efficiency. In this embodiment, the explanation will be based on the assumption of automated execution.

[0056] In S301, the processor 10 prepares multiple provisional parameter sets. For example, the processor 10 prepares multiple provisional parameter sets with different droplet arrangements. In this preparation, the evaluation region 205 is specified. The evaluation region 205 determines the calculation target for the high-speed calculation mode 202. There may be multiple evaluation regions 205. If there are multiple evaluation regions 205, the number of calculations in the high-speed calculation mode 202 increases accordingly, but the selection of the parameter set 203 can be made more precise. In this embodiment, in order to simplify the explanation that will be described later, we will continue to explain assuming that there is only one evaluation region 205. In this embodiment, we will explain assuming that there are 10 provisional parameter sets to be prepared. The difference between these 10 provisional parameter sets is, in this case, the difference in the X and Y coordinates of the droplet arrangement.

[0057] These provisional parameter sets may be registered in memory 20 through operator input. Alternatively, they may be created by a program that automatically generates parameter sets based on input of the conditions for changing the droplet placement.

[0058] In S302, the processor 10 sets the calculation mode to high-speed calculation mode 202. In this embodiment, the simulation program 21 includes a detailed calculation mode 201 and a high-speed calculation mode 202, so the processor 10 sets the calculation mode to be used to high-speed calculation mode 202. Specifically, a switching command is described in the sequence file, and the processor 10 receives this command and automatically switches to high-speed calculation mode 202.

[0059] In S303, the processor 10 performs calculations in high-speed calculation mode 202. In this step, each of the multiple provisional parameter sets prepared in S301 is applied to perform calculations in high-speed calculation mode 202. In this embodiment, 10 sets of provisional parameter sets are prepared, so a total of 10 calculations are performed. The calculations are performed automatically, and the 10 calculations are performed consecutively.

[0060] In S304, the processor 10 creates a calculation results list. The processor 10 stores the calculation results for each of the multiple provisional parameter sets in memory 20 as a single calculation results list in a file. The types of calculation results to be stored must include at least the evaluation items for threshold determination, which will be introduced in the next step. In this embodiment, there are 10 sets of provisional parameter sets, so the calculation results for 10 sets are described in the calculation list. In this embodiment, the number of bubble defects and the maximum defect size are assumed to be included in the following explanation. The creation of the calculation list is performed automatically.

[0061] In S305, the processor 10 selects a parameter set. From among the multiple provisional parameter sets, the processor 10 determines the parameter set whose behavioral calculation results using the high-speed calculation mode 202 satisfy predetermined evaluation criteria. Multiple decision programs (modules) with different algorithms may be provided, and the parameter set may be determined by one of these decision programs. Alternatively, multiple decision programs may be installed in memory 20, and one of them may be used.

[0062] Since the calculation results have already been compiled into a calculation results list in S304, in S305, the parameter set is determined (selected) by referring to the calculation results list. Among the results of the behavior calculations corresponding to each of the multiple provisional parameter sets, the information on the maximum bubble defect size and the number of bubble defects is referenced.

[0063] First, it is necessary to establish a policy for determining the calculation results using the judgment program. The predetermined evaluation criteria mentioned above can be that the maximum bubble defect size is less than or equal to the allowable value and the number of bubble defects is less than or equal to the allowable number. For example, the first priority for judgment may be set as the condition that the maximum bubble defect size is less than or equal to the allowable value, and the second priority for judgment may be set as the condition that the number of bubble defects is less than or equal to the allowable number, and the policy may be to select one or more of the best conditions. For example, if there are 10 provisional parameter sets registered in the calculation result list, the processor 10 will refer to each calculation result one by one to search for parameter sets that satisfy the above conditions and select a predetermined number (for example, 1) of parameter sets from the 10 sets. These judgments are performed automatically according to the judgment program. Note that the judgment policy is not limited to what is described here and can be set arbitrarily by the operator. Narrowing down the candidate parameter sets here directly leads to a reduction in calculation time. This is because the detailed calculation mode 201 calculation will be performed the same number of times as the number of candidate parameter sets selected here. Therefore, from a time perspective, it is desirable to select as few parameters as possible, but from the perspective of evaluating the calculation results, it is desirable to increase the number as much as possible, so the numbers must be chosen carefully.

[0064] Furthermore, there may be cases where no parameter set exists that matches the policy (predetermined evaluation criteria). In such cases, you may choose a parameter set that is close to the policy, or you may exit the flow at this point and skip the calculation using the detailed calculation mode 201 described later.

[0065] In S306, processor 10 sets the calculation mode to detailed calculation mode 201. Since the simulation program 21 was set to high-speed calculation mode 202 in S302, the calculation mode is switched in this step to detailed calculation mode 201. Specifically, a command to switch modes is written in the sequence file, and processor 10 receives the command and automatically switches to detailed calculation mode 201.

[0066] In S307, processor 10 is in detailed calculation mode. 201 The calculation is then executed. Here, the parameter set selected in S305 is applied and detailed calculation mode 201 is executed. If the parameter set was narrowed down to one set in S305, then only one calculation result will be obtained in detailed calculation mode 201.

[0067] The obtained calculation results are from high-speed calculation mode 20 2 Because it provides more detailed information than the calculation results obtained by [another method], it can be used to check the final bubble formation information. Also, since it performs bubble disappearance calculations, it can evaluate the results of more physical calculations, such as the evaluation of filling completion time. If there are no problems with these, the narrowed-down parameter set can be set as the final parameter set, or other parameters can be added. set The flow can be run again to determine the final parameters. A typical approach is to repeat these evaluations to determine the final parameter set to be used in the IMP film deposition system.

[0068] By performing the steps described above, instead of applying detailed calculation mode 201 to all of the multiple provisional parameter sets, the number of calculations in detailed calculation mode 201 can be reduced by using fast calculation mode 202 to narrow down the candidate parameter sets. This reduces the total calculation time required to determine the parameter sets.

[0069] As described above, according to this embodiment, the simulation program includes a calculation mode for detailed calculations and a calculation mode for high-speed calculations, and by utilizing the characteristics of these modes, the time required for simulation can be reduced. For example, by calculating multiple provisional parameter sets in high-speed calculation mode to narrow down the parameter set, and then executing only the narrowed-down parameter set in detailed calculation mode, the total calculation time required can be reduced.

[0070] As described above, by reducing the total computation time of the simulation, we can provide a method to reduce the time required to determine the parameter set.

[0071] <Second Embodiment> In the second embodiment, the calculation mode is switched using a user interface that presents options for receiving user instructions regarding the parameter set and calculation method of the film formation process, and also receives user instructions to start the execution of behavioral calculations. In this embodiment, such a user interface is realized using a display 30 provided on the information processing device 1. The display 30 provides a GUI (Graphical User Interface). In this embodiment, the operator (user) visually confirms the calculation results via the GUI and manually switches the calculation mode. Note that the second embodiment overlaps in many parts with the first embodiment. Therefore, the description of the second embodiment will only describe the parts that differ from the first embodiment.

[0072] Figure 4 shows an example of a GUI provided on the display 30 of the information processing device 1 in the second embodiment. The GUI provided on the display 30 may include a display window 401. The display window 401 is a general-purpose display window for displaying various visual information. The GUI may also include a parameter set selection window 402. The parameter set selection window 402 displays multiple parameter sets registered in memory 20. The user selects one or more of the displayed parameter sets as input devices. 4 It can be selected by selecting 0. Note that multiple parameter sets can be selected.

[0073] The GUI may further include a calculation mode selection window 403. The calculation mode selection window 403 displays the calculation modes available in the simulation program 21. Manual switching of the calculation mode, as described above, can be performed via this selection window 403. In this embodiment, since the detailed calculation mode 201 and the high-speed calculation mode 202 are used, two calculation modes are displayed. These can be selected by the input device 30. The calculation is then performed in the selected calculation mode.

[0074] The GUI may also include a button 404 to display calculation results. Parameter set selection window 40 2 When the calculation result display button 404 is pressed while a parameter set is selected, the calculation result is displayed in the display window 401.

[0075] The GUI may also include a calculation execution button 405. Parameter set selection window 40 2 The parameter set is selected, and the calculation mode selection window 40 appears. 3 When the calculation execution button 405 is pressed while the calculation mode is active, the behavior calculation is executed in response.

[0076] The process is the same as in the first embodiment up to the point of preparing multiple provisional parameter sets and performing calculations using the high-speed calculation mode 202. In the second embodiment, the calculation results of the detailed calculation mode 201 can be obtained using the GUI. When the parameter set to be calculated 203 is selected in the parameter set selection window 402 and the high-speed calculation mode 202 is selected in the calculation mode selection window 403, the calculation execution button 405 is pressed, and the calculation results of the high-speed calculation mode 202 are obtained.

[0077] With calculation results available in high-speed calculation mode 202, a parameter set is selected in the parameter set selection window 402, and the calculation result display button 404 is pressed, at which point the calculation results are displayed in the display window 401. There are many possible ways to display the calculation results, but in Figure 4, the following can be displayed: a color contour showing the size of the distributed bubble defects, the number of bubbles, the maximum area of ​​the bubbles in the XY plane, and the average area of ​​the bubbles in the XY plane. This display information can be changed in the settings. Note that the bubble size is displayed in the XY plane rather than by volume here because the measurement of bubbles generated in the film of the curable composition IM is performed in the XY plane using an external device, and the aim is to match the values.

[0078] Figure 4 displays the calculation results for one parameter set, but it is also possible to compare and evaluate multiple calculation results by selecting multiple parameter sets in the parameter set selection window 402.

[0079] The operator reviews these calculation results and selects the parameter set to be calculated in detailed calculation mode 201. Alternatively, a new parameter set may be created based on the insights gained from the calculation results, and this parameter set may be used as a candidate for calculation in detailed calculation mode 201.

[0080] After reviewing the calculation results, the operator selects parameter set 203 to execute the detailed calculation mode from parameter set selection window 402. Then, they select detailed calculation mode 201 from calculation mode selection window 403. Finally, pressing the calculation execution button 405 executes the calculation in detailed calculation mode 201.

[0081] As described above, this embodiment demonstrates a method in which the parameter set for performing the detailed calculation mode 201 is manually selected by the operator. The first embodiment is automatically executed, so it is highly effective in shortening the overall calculation speed. In contrast, in this embodiment, the operator confirms the calculation before performing the detailed calculation mode 201, which reduces the amount of rework if there is an error in the automated sequence and allows for flexible decision-making after seeing the results. It is desirable to use these methods appropriately depending on the application.

[0082] In this embodiment as well, by calculating multiple provisional parameter sets in high-speed calculation mode to narrow down the parameter set, and then executing only the narrowed-down parameter set in detailed calculation mode, the total calculation time required for the calculation can be reduced.

[0083] As described above, by reducing the total computation time of the simulation, we can provide a method to reduce the time required to determine the parameter set.

[0084] <Third Embodiment> In the third embodiment, the evaluation region 205 is selected from the information obtained from the calculation results of the detailed calculation mode 201 and the calculation of the high-speed calculation mode 202 is performed. Specifically, in the third embodiment, the detailed calculation mode 20 1 Based on the calculation results, the problematic area is identified in advance, and the evaluation region 205 is selected from the information of that identified area. Then, multiple sets of parameter sets aimed at improvement are prepared, and calculations are performed using the high-speed calculation mode 202. The problematic area may include, for example, large bubbles or areas where bubbles are concentrated.

[0085] Note that the third embodiment largely overlaps with the first embodiment. Therefore, the description of the third embodiment will only cover the parts that differ from the first embodiment.

[0086] Figure 5 is a flowchart illustrating the calculation procedure for the simulation in the third embodiment. In S501, the processor 10 prepares a parameter set. In this embodiment, it is assumed that the location of bubble defects is known. Therefore, in S501, a parameter set is prepared for, for example, a film deposition apparatus IMP where bubble defects were a problem.

[0087] In S502, the processor 10 sets the calculation mode to detailed calculation mode 201. In S503, the processor 10 executes the calculation in detailed calculation mode 201. In this step, one calculation in detailed calculation mode 201 is executed according to the parameter set prepared in S501. In this embodiment, since the location of bubble generation is already known, it is possible to check at this stage whether there is any difference from the actual phenomenon. If there is a difference, the flow may be interrupted and the parameter set to be prepared in S501 may be reviewed.

[0088] In S504, the processor 10 selects the evaluation area 205. As mentioned above, the evaluation area 205 is a candidate for areas with large bubbles or areas where bubbles are concentrated. As also mentioned in the first embodiment, the evaluation area 205 does not need to be limited to one location; there can be multiple. However, it is important to note that the computation time increases as the number of evaluation areas 205 to be evaluated increases.

[0089] In S505, the processor 10 prepares multiple provisional parameter sets. For example, it prepares multiple sets of parameters with modified X or Y coordinates of droplets of the curable composition IM that are likely to cause bubble generation within the evaluation region 205. Since it is necessary to consider multiple provisional parameter sets, S505 typically involves preparing multiple parameter sets.

[0090] In S506, the processor 10 sets the calculation mode to high-speed calculation mode 202. In S507, the processor 10 performs the calculation in high-speed calculation mode 202. Here, the processor 10 executes high-speed calculation mode 202 by applying the multiple parameter sets prepared in S505.

[0091] By referring to the obtained calculation results, it is possible to predict the increase or decrease in bubbles when the arrangement of droplets of the curable composition IM is changed. Detailed simulation results of bubbles may be obtained by performing calculations in detailed calculation mode 201 using the best parameter set, or the effect of reducing bubble defects may be confirmed by actually performing imprinting with the film forming apparatus IMP using the same parameter set.

[0092] As described above, in this embodiment as well, by using the high-speed calculation mode 202, the number of calculations in the detailed calculation mode 201 can be reduced, thereby reducing the total calculation time required for the simulation.

[0093] As described above, by reducing the total computation time of the simulation, we can provide a method to reduce the time required to determine the parameter set.

[0094] <Fourth Embodiment> Up until now, we have described application examples where the film formation apparatus IMP is an imprint apparatus. However, the present invention is also effective in other apparatuses that have a filling process similar to that of an imprint apparatus. For example, the planarization apparatus described above is one such apparatus.

[0095] One specific application is planarization, which involves flattening irregularities of approximately 0.5 to 1 μm on a substrate, resulting from device processing, to a level that matches the depth of focus of lithography. One method of planarization involves applying resin droplets between a flat mold and a substrate using inkjet technology, and then pressing them together to form a flat film on the substrate. Such a planarization apparatus requires determining the parameter set for the planarization process, which is similar to that of an imprint apparatus. Therefore, the present invention can be applied to the above-mentioned process.

[0096] (Other embodiments) The present invention can also be realized by supplying a program that implements one or more of the functions of the above-described embodiments to a system or device via a network or storage medium, and by a process in which one or more processors in the computer of that system or device read and execute the program. It can also be realized by a circuit (e.g., an ASIC) that implements one or more functions.

[0097] The disclosures herein include at least the following simulation devices and programs: (Item 1) A simulation apparatus for predicting the behavior of a curable composition in a film formation process in which multiple droplets of the curable composition placed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, The system includes a processing unit that performs a calculation of the behavior of the curable composition using a calculation method selected from a first calculation method and a second calculation method that shortens the calculation time compared to the first calculation method. The aforementioned processing unit, The behavior of the curable composition is calculated by applying each of the multiple provisional parameter sets of the film formation process using the second calculation method. From each of the aforementioned set of provisional parameters, determine the parameter set whose behavior calculation results satisfy a predetermined evaluation criterion. Applying the determined parameter set, the behavior calculation of the curable composition is performed using the first calculation method. A simulation device characterized by the following features. (Item 2) The behavioral calculation by the first calculation method includes performing a coupled calculation to determine the relationship between the behavior of droplets of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold. The behavior calculation by the second calculation method includes, instead of the coupled calculation, calculating the deformation of the type by applying the parameters of the type to a predetermined model equation. The simulation apparatus described in item 1, characterized by the features described herein. (Item 3) The behavioral calculation by the first calculation method includes performing a coupled calculation to determine the relationship between the behavior of droplets of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold. The behavioral calculation by the second calculation method includes predicting the deformation of the type using past calculation results or measurement results of the deformation of the type, without performing the coupled calculation. The simulation apparatus described in item 1, characterized by the features described herein. (Item 4) The simulation apparatus according to any one of items 1 to 3, characterized in that the evaluation domain for behavior calculation by the second calculation method is limited to a part of the evaluation domain for behavior calculation by the first calculation method. (Item 5) The results of the behavior calculation include information on the maximum bubble defect size and the number of bubble defects. The aforementioned predetermined evaluation criteria are that the maximum bubble defect size is less than or equal to the allowable value and the number of bubble defects is less than or equal to the allowable number. A simulation device characterized by any one of items 1 to 4. (Item 6) A simulation apparatus for predicting the behavior of a curable composition in a film formation process in which multiple droplets of the curable composition placed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, A processing unit that performs a calculation of the behavior of the curable composition using a calculation method selected from a first calculation method and a second calculation method that shortens the calculation time compared to the first calculation method, The system includes a user interface that presents options for receiving user instructions regarding the parameter set and calculation method of the film formation process, and also accepts user instructions to start the execution of behavioral calculations. The processing unit, in response to a user instruction to start execution being input via the user interface, applies the parameter set selected from the parameter set options and performs a calculation of the behavior of the curable composition using the calculation method selected from the calculation method options among the first and second calculation methods. A simulation device characterized by the following features. (Item 7) The user interface is configured such that the user can select multiple parameter sets from the options of the parameter sets. If the user selects multiple parameter sets from the options for the parameter set, and the user selects the second calculation method from the options for the calculation method, the processing unit applies each of the selected parameter sets and performs the behavior calculation of the curable composition using the second calculation method. The simulation apparatus described in item 6, characterized by the features described herein. (Item 8) The user interface includes a display window that shows the results of the performed behavior calculations. After the behavior calculation of the curable composition is performed by the second calculation method by applying each of the selected parameter sets, the display window displays the results of the behavior calculation performed by applying the selected parameter set in response to the user selecting one of the parameter sets from the options. The simulation apparatus described in item 7, characterized by the features described herein. (Item 9) The simulation apparatus according to item 8, characterized in that, after the behavior calculation of the curable composition is performed by the second calculation method by applying each of the selected parameter sets, if the user selects one of the parameter sets from the options and the first calculation method is selected, and a user instruction to start execution is input, the processing unit performs the behavior calculation of the curable composition by the first calculation method by applying the selected parameter set. (Item 10) A simulation apparatus for predicting the behavior of a curable composition in a film formation process in which multiple droplets of the curable composition placed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, The system includes a processing unit that performs a calculation of the behavior of the curable composition using a calculation method selected from a first calculation method and a second calculation method that shortens the calculation time compared to the first calculation method. The aforementioned processing unit, Applying the provisional parameter set for the film formation process, the behavior of the curable composition is calculated using the first calculation method. Based on the results of the behavior calculation for the aforementioned provisional parameter set, the evaluation region is determined. The behavior calculation of the curable composition is performed by applying each of the multiple provisional parameter sets to the determined evaluation region using the second calculation method. A simulation device characterized by the following features. (Item 11) A simulation apparatus for predicting the behavior of a curable composition in a film formation process in which multiple droplets of the curable composition placed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, The processing unit has a calculation method selected from a first calculation method and a second calculation method that shortens the calculation time compared to the first calculation method, which performs a calculation of the behavior of the curable composition. A simulation device characterized by the following features. (Item 12) A program that causes a computer to function as a processing unit in any one of the simulation devices described in item 1 through 11.

[0098] The invention is not limited to the embodiments described above, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, claims are attached to disclose the scope of the invention. [Explanation of Symbols]

[0099] IMP: Film forming apparatus, S: Substrate, IM: Curable composition, M: Type, AS: Alignment scope, 1: Information processing apparatus

Claims

1. A simulation apparatus for predicting the behavior of a curable composition in a film formation process in which multiple droplets of the curable composition placed on a substrate are brought into contact with a mold to form a film of the curable composition on the substrate, The system includes a processing unit that performs a calculation of the behavior of the curable composition using a calculation method selected from a first calculation method and a second calculation method that shortens the calculation time compared to the first calculation method. The aforementioned processing unit, For each of the multiple provisional parameter sets of the film formation process, the behavior of the curable composition is calculated using the second calculation method. Based on the results of the behavior calculations corresponding to each of the plurality of provisional parameter sets, a parameter set that satisfies predetermined evaluation criteria is determined. Applying the determined parameter set, the behavior calculation of the curable composition is performed using the first calculation method. A simulation device characterized by the following features.

2. The behavioral calculation by the first calculation method includes performing a coupled calculation to determine the relationship between the behavior of droplets of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold. The behavior calculation by the second calculation method includes, instead of the coupled calculation, calculating the deformation of the type by applying the parameters of the type to a predetermined model equation. The simulation apparatus according to feature 1.

3. The behavioral calculation by the first calculation method includes performing a coupled calculation to determine the relationship between the behavior of droplets of the curable composition, the deformation of the mold, and the pressure in the space on the back surface of the mold. The behavior calculation by the second calculation method includes predicting the deformation of the type using past calculation results or measurement results of the deformation of the type, without performing the coupled calculation. The simulation apparatus according to feature 1.

4. The simulation apparatus according to claim 1, characterized in that the evaluation region of the behavior calculation by the second calculation method is limited to a part of the evaluation region of the behavior calculation by the first calculation method.

5. The results of the behavior calculation include information on the maximum bubble defect size and the number of bubble defects. The aforementioned predetermined evaluation criteria are that the maximum bubble defect size is less than or equal to the allowable value and the number of bubble defects is less than or equal to the allowable number. The simulation apparatus according to claim 1, characterized by the following:

6. A program that causes a computer to function as a processing unit in a simulation apparatus according to any one of claims 1 to 5.

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