Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method that can improve in-plane uniformity when etching a substrate with a chemical solution.SOLUTION: A substrate processing apparatus has a liquid treatment device 10 having a treatment tank 11 in which a chemical solution is stored and a holding member 12 in which a substrate W with a metallic or inorganic film on its main surface is held so that its main surface Wm is in a posture along the vertical direction and immersed in the chemical solution in the treatment tank, and a cooling treatment device (cooling section) 30 that cools the substrate before immersion in the chemical solution so that the temperature of the substrate becomes T-5[°C] - T[°C] when the temperature of the chemical solution is T[°C].SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background Art]

[0002] Patent Document 1 discloses a cleaning apparatus that rinses a substrate, which has been processed with a chemical solution, using pure water. [Prior Art Literature] [Patent Literature]

[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2013-058696 [Summary of the Invention] [Problem to be Solved by the Invention]

[0004] The present disclosure describes a substrate processing apparatus and a substrate processing method capable of improving in-plane uniformity when etching a substrate with a chemical solution. [Means for Solving the Problem]

[0005] An example of the substrate processing apparatus includes: a processing tank configured to store a chemical solution; a holding member configured to hold a substrate having a metal film or an inorganic film provided on a main surface thereof such that the main surface is in an attitude along the vertical direction, and immerse the substrate in the chemical solution in the processing tank; and a cooling unit configured to cool the substrate before the substrate is immersed in the chemical solution such that when the temperature of the chemical solution is T[°C], the temperature of the substrate falls within a range of T-5[°C] to T[°C].[=END]] [Advantageous Effects of the Invention]

[0006] According to the substrate processing apparatus and the substrate processing method of the present disclosure, it is possible to improve in-plane uniformity when etching a substrate with a chemical solution. [Brief Description of the Drawings]

[0007] [Figure 1]Figure 1 is a top view showing an example of a substrate processing system. [Figure 2] Figure 2(a) is a side view showing an overview of the liquid processing apparatus, and Figure 2(b) is a side view showing an overview of the cooling apparatus. [Figure 3] Figure 3 is a block diagram showing an example of the main components of a substrate processing system. [Figure 4] Figure 4 is a schematic diagram showing an example of the controller's hardware configuration. [Figure 5] Figure 5 shows an example of substrate processing. [Figure 6] Figure 6 shows another example of substrate processing. [Figure 7] Figure 7 shows another example of substrate processing. [Figure 8] Figure 8 shows another example of substrate processing. [Modes for carrying out the invention]

[0008] In the following descriptions, the same reference numeral will be used for identical elements or elements with the same function, and redundant explanations will be omitted. Furthermore, in this specification, when referring to the top, bottom, right, and left of a figure, the direction of the reference numeral in the figure will be used as the reference.

[0009] [Configuration of the substrate processing system] First, with reference to Figure 1, the configuration of the substrate processing system 1 (substrate processing device) will be described. The substrate processing system 1 includes a carrier loading / unloading unit 2, a lot formation unit 3, a lot placement unit 4, a lot processing unit 5 (substrate processing device), and a controller Ctr (control unit).

[0010] The carrier loading / unloading section 2 includes a stage 2a, a mounting table 2b, a transport mechanism 2c, and a stock 2d. The stage 2a is configured to accommodate multiple carriers 6. The mounting table 2b is configured to accommodate one carrier 6. The transport mechanism 2c is located between the stage 2a and the mounting table 2b. The transport mechanism 2c operates based on an operation signal from the controller Ctr and is configured to transport the carriers 6 between the stage 2a, the mounting table 2b, and the stock 2d. The stock 2d is configured to temporarily store the carriers 6.

[0011] The carrier 6 is configured to accommodate multiple (e.g., 25) substrates W arranged vertically in a horizontal orientation. In this specification, horizontal orientation refers to an orientation in which the main surface Wm (see Figure 2) of the substrate W is aligned horizontally. The substrate W may be disc-shaped or may be a plate shape other than circular, such as a polygon. The substrate W may have a notch in which a part is cut out. The notch may be, for example, a notch (groove such as U-shaped or V-shaped) or a straight section extending in a straight line (a so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0012] A film is formed on the main surface Wm of the substrate W. The film may be, for example, a metal film or an inorganic film. The metal film may be, for example, a molybdenum film or a tungsten film. The inorganic film may be, for example, a silicon oxide film (SiO2) or a silicon nitride film (SiN).

[0013] The lot forming unit 3 includes a transfer mechanism 3a configured to take out a plurality of substrates W from one or more carriers 6 and form one lot. The plurality of (for example, 50) substrates W constituting said one lot are processed simultaneously in the lot processing unit 5. The transfer mechanism 3a operates based on an operation signal from the controller Ctr, and is configured to change the posture of the substrate W between a horizontal posture and a vertical posture during transfer of the substrate W. In the present specification, the vertical posture refers to a posture in which the main surface Wm of the substrate W is along the vertical direction.

[0014] The transfer mechanism 3a, for example, takes out one substrate W from the carrier 6 placed on the placement table 2b, changes the posture thereof to a vertical posture, and transfers the substrate W in the vertical posture to the lot placement unit 4. The transfer mechanism 3a repeats this operation to form one lot (a plurality of substrates W arranged front and back in the vertical posture) in the lot placement unit 4. On the other hand, the transfer mechanism 3a, for example, takes out one substrate W from the lot placed on the lot placement unit 4, changes the posture thereof to a horizontal posture, and transfers the substrate W in the horizontal posture to the carrier 6 on the placement table 2b. The transfer mechanism 3a repeats this operation to store all substrates W constituting the lot in one or more carriers 6.

[0015] The lot placement unit 4 includes a placement table 4a that temporarily places a lot transferred between the lot forming unit 3 and the lot processing unit 5. The placement table 4a may include a pre-processing lot placement table 4b configured to place a lot before being processed by the lot processing unit 5, and a post-processing lot placement table 4c configured to place a lot after being processed by the lot processing unit 5.

[0016] The lot processing unit 5 is configured to perform processes such as etching, cleaning, and drying, with a plurality of substrates W aligned front and back in a vertical posture as one lot.

[0017] [Details of Lot Processing Unit] Here, the lot processing unit 5 will be described in detail with reference to FIG. 1 and FIG. 2. The lot processing unit 5 includes a conveyance mechanism 7 (conveyance unit), a drying processing apparatus 8, a cleaning processing apparatus 9, a plurality of liquid processing apparatuses 10, a plurality of rinse processing apparatuses 20, and a cooling processing apparatus 30 (cooling unit).

[0018] The conveyance mechanism 7 is configured to operate based on an operation signal from a controller Ctr. As illustrated in FIG. 1, the conveyance mechanism 7 is configured to convey a lot among the lot placing unit 4, the drying processing apparatus 8, the cleaning processing apparatus 9, the plurality of liquid processing apparatuses 10, the plurality of rinse processing apparatuses 20, and the cooling processing apparatus 30. The conveyance mechanism 7 includes a rail 7a, a moving body 7b, and a holding body 7c (conveyance unit). The rail 7a is disposed so as to extend between the lot placing unit 4 (post-processing lot placing table 4c) and the lot processing unit 5 (cooling processing apparatus 30). The moving body 7b is configured to be movable along the rail 7a. The holding body 7c is provided on the moving body 7b and is configured to hold a lot.

[0019] The drying processing apparatus 8 operates based on an operation signal from the controller Ctr, and is configured to perform a drying process on a substrate W using a drying processing gas (e.g., isopropyl alcohol or the like). The cleaning processing apparatus 9 operates based on an operation signal from the controller Ctr, and is configured to perform a cleaning process on the holding body 7c using a cleaning processing liquid and a drying gas.

[0020] The liquid treatment apparatus 10 is configured to treat the substrate W with a chemical solution L1 (see Figure 2) (for example, to remove dirt and foreign matter, to etch, etc.). The chemical solution L1 may be, for example, an acidic solution, an alkaline solution, or an organic solution. Acidic solutions may include, for example, PAN solution (a mixture of acetic acid, phosphoric acid, nitric acid, and pure water), SC-2 solution (a mixture of hydrochloric acid, hydrogen peroxide, and pure water), SPM (a mixture of sulfuric acid and hydrogen peroxide solution), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HNO3+HF solution (a mixture of nitric acid and hydrofluoric acid), etc. Alkaline solutions may include, for example, SC-1 solution (a mixture of ammonia, hydrogen peroxide, and pure water), hydrogen peroxide solution, etc. The temperature T [°C] of the chemical solution L1 when etching the substrate W may be adjusted to be lower than room temperature, for example, 25°C or lower, or 15°C or lower.

[0021] The liquid processing apparatus 10 includes a processing tank 11 and a holding member 12, as illustrated in Figures 1 and 2(a). The processing tank 11 may include a bottomed cylindrical container 11a and a lid member 11b. The container 11a has an opening 11c that is open upward and is configured to store the chemical solution L1.

[0022] The lid member 11b operates based on an operation signal from the controller Ctr and is configured to open and close the opening 11c of the container 11a. When the lid member 11b opens the opening 11c, the retaining member 12 can move back and forth within the container 11a. When the lid member 11b closes the opening 11c, the retaining member 12 cannot move within the container 11a, while the volatilization of the liquid chemical L1 is suppressed.

[0023] The holding member 12 is configured to receive one lot from the transport mechanism 7 and hold the multiple substrates W constituting that lot in a vertical position. The holding member 12 is connected to a drive mechanism (not shown). The holding member 12 is configured to operate and move up and down based on an operation signal from the controller Ctr. The holding member 12 is movable between, for example, a lowered position where the multiple substrates W it holds are immersed in the chemical solution L1 of the processing tank 11 and an elevated position where the multiple substrates W it holds are located above the processing tank 11. In the lowered position, the multiple substrates W held by the holding member 12 are etched by the chemical solution L1 of the processing tank 11. On the other hand, in the elevated position, the multiple substrates W held by the holding member 12 are transferred by the transport mechanism 7.

[0024] The holding member 12 includes a back plate 12a and a plurality of arms 12b. The back plate 12a is a flat plate extending in the vertical direction. The plurality of arms 12b are connected to the lower end of the back plate 12a and extend in a direction perpendicular to the main surface of the back plate 12a and in the horizontal direction. The plurality of arms 12b are arranged at predetermined intervals in the width direction of the back plate 12a.

[0025] Multiple grooves (not shown) are provided at approximately equal intervals on the upper surface of the arm 12b, aligned in the direction of extension of the arm 12b. By positioning the peripheral edge of the vertically oriented substrate W within the grooves, the substrate W is held by the arm 12b while maintaining its vertical orientation. In other words, the arm 12b can support multiple vertically oriented substrates W while they are aligned in the direction of extension of the arm 12b.

[0026] The rinsing apparatus 20 is configured to wash the substrate W processed by the liquid apparatus 10 with a cleaning solution. The cleaning method for the substrate W in the rinsing apparatus 20 may be, for example, an overflow rinse or a quick damp rinse. The cleaning solution may include, for example, pure water (DIW), ozonated water, carbonated water (CO2 water), ammonia water, etc. Although not shown in the figures, the rinsing apparatus 20 includes a processing tank and holding members similar to those of the liquid apparatus 10.

[0027] As illustrated in Figures 1 and 2(b), the cooling apparatus 30 is configured to cool the substrate W with a cooling liquid L2 before it is immersed in the chemical solution L1 in the liquid apparatus 10. The cooling liquid L2 may contain, for example, at least one selected from the group consisting of acetic acid, phosphoric acid, isopropyl alcohol, methanol, and ethanol. If the chemical solution L1 is a PAN solution, the cooling liquid L2 may be, for example, acetic acid, phosphoric acid, etc.

[0028] The cooling apparatus 30 includes a cooling tank 31, a holding member 32 (another holding member), a temperature-controlled circulation unit 33 (temperature-controlled unit, circulation unit), and a temperature sensor 34 (measuring unit), as illustrated in Figure 2(b). The cooling tank 31 may include a bottomed cylindrical container 31a (bottomed container) and a lid member 31b. The container 31a has an opening 31c that is open upward and is configured to store a cooling liquid L2.

[0029] The lid member 31b may be configured to operate based on an operating signal from the controller Ctr and to open and close the opening 31c of the container 31a. When the lid member 31b opens the opening 31c, the retaining member 32 can move back and forth within the container 31a. When the lid member 31b closes the opening 31c, the retaining member 32 cannot move within the container 31a, while the volatilization of the coolant L2 is suppressed.

[0030] The holding member 32 is configured to receive one lot from the transport mechanism 7 and hold the multiple substrates W constituting that lot in a vertical position. The holding member 32 is connected to a drive mechanism (not shown). The holding member 32 is configured to operate and move up and down based on an operation signal from the controller Ctr. The holding member 32 is movable, for example, between a lowered position where the multiple substrates W it holds are immersed in the coolant L2 of the cooling tank 31 and an elevated position where the multiple substrates W it holds are located above the cooling tank 31. In the lowered position, the multiple substrates W held by the holding member 32 are etched by the coolant L2 of the cooling tank 31. On the other hand, in the elevated position, the multiple substrates W held by the holding member 32 are transferred by the transport mechanism 7.

[0031] The retaining member 32, like the retaining member 12, includes a back plate 32a and a plurality of arms 32b. The back plate 32a is a flat plate extending in the vertical direction. The plurality of arms 32b are connected to the lower end of the back plate 32a and extend in a direction perpendicular to the main surface of the back plate 32a and in the horizontal direction. The plurality of arms 32b are arranged at predetermined intervals in the width direction of the back plate 32a.

[0032] Multiple grooves (not shown) are provided at approximately equal intervals on the upper surface of the arm 32b, aligned in the direction of extension of the arm 32b. By positioning the peripheral edge of the vertically oriented substrate W within the grooves, the substrate W is held by the arm 32b while maintaining its vertical orientation. In other words, the arm 32b can support multiple vertically oriented substrates W while they are aligned in the direction of extension of the arm 32b.

[0033] The temperature-controlled circulation unit 33 includes a pipe 33a (circulation unit), a pump 33b (circulation unit), and a temperature-controlled unit 33c. One end of the pipe 33a may be connected to, for example, the bottom wall of the container 31a. The other end of the pipe 33a may be connected to the top of the container 31a. The pump 33b operates based on an operating signal from the controller Ctr and is configured to draw coolant L2 from the other end of 33a and to release the drawn coolant L2 into the container 31a from one end of the pipe 33a. As a result, the coolant L2 stored in the container 31a circulates through the pipe 33a.

[0034] The temperature control unit 33c operates based on an operation signal from the controller Ctr and is configured to adjust the temperature of the coolant L2 circulating through the piping 33a. The temperature control unit 33c adjusts the temperature of the coolant L2 so that the temperature of the coolant L2 circulating through the piping 33a reaches a predetermined set temperature. This set temperature may be less than or equal to the temperature T[°C] of the chemical solution L1, or it may be in the range of T-5[°C] to T[°C]. The temperature control unit 33c may be, for example, a thermoelectric cooler configured to cool an object using a thermoelectric cooling element (Peltier element), or a heat exchanger configured to cool an object using a circulating refrigerant.

[0035] The temperature sensor 34 is configured to measure the temperature of the coolant L2 in the cooling tank 31 (container 31a). The temperature sensor 34 is configured to transmit the measured data of the coolant L2 temperature to the controller Ctr. The temperature sensor 34 may be any type of sensor capable of measuring the temperature of a liquid.

[0036] [Controller Details] Next, with reference to Figure 3, the controller Ctr will be explained in more detail. The controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a convenient division of the controller Ctr's functions into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being realized by program execution, but may also be realized by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates these.

[0037] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each part of the substrate processing system 1. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. In this specification, each part of the substrate processing system 1 may include a carrier loading / unloading unit 2, a lot forming unit 3, a lot placement unit 4, a lot processing unit 5 (lid members 11b, 31b, holding members 12, 32, a pump 33b, a temperature control unit 33c, a temperature sensor 34), etc.

[0038] The storage unit M2 is configured to store various types of data. For example, the storage unit M2 may store programs read from the recording medium RM by the reading unit M1, setting parameters (so-called processing recipes) for operating each part of the board processing system 1, and setting data input from the operator via an external input device (not shown). The storage unit M2 may also receive data such as the temperature of the coolant L2 in the cooling tank 31 measured by the temperature sensor 34 and store this data.

[0039] The processing unit M3 is configured to process various data. For example, the processing unit M3 may be configured to generate operation signals for operating each part of the substrate processing system 1 based on various data stored in the storage unit M2. For example, the processing unit M3 may determine whether the temperature of the substrate W is in the range of T-5[°C] to T[°C] based on the temperature data of the coolant L2 stored in the storage unit M2. That is, the processing unit M3 may determine that the temperature of the substrate W is in the range of T-5[°C] to T[°C] when the temperature data of the coolant L2 stored in the storage unit M2 is in the range of T-5[°C] to T[°C]. For example, when the processing unit M3 determines that the temperature of the substrate W is in the range of T-5[°C] to T[°C], it may determine that the cooling of the substrate W is complete and generate an operation signal for transporting the substrate W from the cooling processing device 30 to the liquid processing device 10 by the transport mechanism 7.

[0040] The instruction unit M4 is configured to transmit the operation signals generated in the processing unit M3 to each part of the substrate processing system 1.

[0041] The hardware of the controller Ctr may consist of, for example, one or more control computers. The controller Ctr may include circuit C1 as a hardware configuration, as shown in Figure 4. Circuit C1 may consist of electrical circuit elements. Circuit C1 may include, for example, a processor C2, memory C3, storage C4, driver C5, and input / output ports C6.

[0042] The processor C2 may be configured to implement each of the above-described functional modules by executing a program in cooperation with at least one of the memory C3 and storage C4 and performing signal input and output via the input / output port C6. The memory C3 and storage C4 may function as a storage unit M2. The driver C5 may be a circuit configured to drive each part of the board processing system 1. The input / output port C6 may be configured to mediate signal input and output between the driver C5 and each part of the board processing system 1.

[0043] The substrate processing system 1 may have one controller Ctr, or it may have a group of controllers (control unit) composed of multiple controllers Ctr. If the substrate processing system 1 has a group of controllers, the carrier loading / unloading unit 2, the lot formation unit 3, the lot placement unit 4, and the lot processing unit 5 may each be controlled by separate controllers Ctr, or at least two of the carrier loading / unloading unit 2, the lot formation unit 3, the lot placement unit 4, and the lot processing unit 5 may be controlled by one controller Ctr. If the substrate processing system 1 has a group of controllers, each of the above functional modules may be realized by one controller Ctr, or by a combination of two or more controllers Ctr. If the controller Ctr is composed of multiple computers (circuits C1), each of the above functional modules may be realized by one computer (circuit C1), or by a combination of two or more computers (circuits C1). The controller Ctr may have multiple processors C2. In this case, each of the above functional modules may be realized by one processor C2, or by a combination of two or more processors C2.

[0044] [Substrate Processing Method] Next, with reference to Figure 5, the processing method for the substrate W will be explained. Here, the processing after the lot formation unit 3 takes out multiple substrates W from the carrier 6 and transports them to the pre-processing lot placement table 4b, and one lot is formed on the pre-processing lot placement table 4b will be explained.

[0045] First, the controller Ctr instructs the transport mechanism 7 to hold the multiple substrates W in the holder 7c and transport them to the cooling processing device 30. Next, the controller Ctr instructs the transport mechanism 7 to transfer the multiple substrates W from the holder 7c to the arm 32b of the holding member 32, which is waiting above the cooling tank 31. At this time, the controller Ctr has previously instructed the lid member 31b to retract the lid member 31b from the opening 31c of the cooling tank 31, so that the opening 31c is open. In this state, the controller Ctr instructs the holding member 32 to lower the holding member 32 into the cooling tank 31. As a result, the multiple substrates W are immersed in the cooling liquid L2 in the cooling tank 31 in a vertical position (see Figure 5(I)).

[0046] Since the temperature of the substrate W is approximately the same as room temperature, the temperature of the coolant L2 rises when multiple substrates W are immersed in the coolant L2 in the cooling tank 31. However, since the coolant L2 in the cooling tank 31 is maintained at a predetermined set temperature by the temperature control circulation unit 33, the heated coolant L2 is cooled back down to the set temperature. Subsequently, when the controller Ctr determines that the temperature of the coolant L2 measured by the temperature sensor 34 is in the range of T-5[°C] to T[°C], the controller Ctr instructs the holding member 32 to raise the holding member 32 to the top of the cooling tank 31. Next, the controller Ctr instructs the transport mechanism 7 to hold the multiple substrates W in the holder 7c and transport them to the liquid processing device 10 (see Figure 5(II)).

[0047] Next, the controller Ctr instructs the transport mechanism 7 to transfer the multiple substrates W from the holder 7c to the arm 12b of the holding member 12, which is waiting above the processing tank 11. At this time, the controller Ctr instructs the lid member 11b in advance to retract the lid member 11b from the opening 11c of the processing tank 11, so that the opening 11c is open. In this state, the controller Ctr instructs the holding member 12 to lower the holding member 12 into the processing tank 11. As a result, the multiple substrates W, after cooling, are immersed in the chemical solution L1 in the processing tank 11 in a vertical position and etched (see Figure 5(III)).

[0048] [Effect] In the above example, the substrate W is cooled to a temperature of T-5[°C] to T[°C] before being immersed in the chemical solution L1. Therefore, the substrate W is immersed in the chemical solution L1 when its temperature is approximately the same as that of the chemical solution L1. Consequently, even when etching the substrate W using a low-temperature chemical solution L1, it becomes less likely for the temperature distribution within the surface of the substrate W to be uneven. As a result, it becomes possible to improve the uniformity of the surface when etching the substrate W with the chemical solution L1.

[0049] In the above example, the vertically positioned substrate W, held by the holding member 32, is immersed in the cooling liquid L2 of the cooling tank 31. Therefore, since the substrate W is cooled by the cooling liquid L2, which has a higher specific heat than gas, the temperature distribution within the surface of the substrate W tends to become uniform quickly. Consequently, it becomes possible to further improve the uniformity within the surface when etching the substrate W with the chemical solution L1.

[0050] As shown in the above example, the temperature control circulation unit 33 circulates the coolant L2 in the cooling tank 31 so that its temperature is between T-5[°C] and T[°C]. Therefore, the temperature control circulation unit 33 maintains the temperature of the coolant L2 in the cooling tank 31 at a nearly constant level. Consequently, regardless of the number of substrates W immersed in the coolant L2 in the cooling tank 31, it becomes less likely for the temperature distribution on the surface of the substrates W to become uneven. Therefore, it becomes possible to further improve the uniformity of the surface when etching the substrates W with the chemical solution L1.

[0051] According to the above examples, the temperature control unit 33c can be a thermoelectric cooler or a heat exchanger. In this case, it becomes possible to control the temperature of the coolant L2 with a relatively inexpensive device.

[0052] As shown in the above example, the coolant L2 may contain at least one selected from the group consisting of, for example, acetic acid, phosphoric acid, isopropyl alcohol, methanol, and ethanol. The melting points of these liquids are lower than 17°C and flow within the cooling tank 31, making them less likely to freeze. Therefore, these liquids, which remain liquid at low temperatures, can efficiently cool the substrate W. In particular, when the chemical solution L1 is a PAN solution, the coolant L2 may be, for example, acetic acid or phosphoric acid. Since acetic acid and phosphoric acid are components of a PAN solution, when acetic acid or phosphoric acid adhering to the substrate W as the coolant L2 mixes with the chemical solution L1, it tends not to affect the etching process of the substrate W by the chemical solution L1. In particular, acetic acid has a relatively low water content and is highly volatile. Therefore, most of the acetic acid adhering to the substrate W as the coolant L2 volatilizes when the substrate W is transported from the cooling tank 31 to the processing tank 11. Consequently, when the chemical solution L1 is a PAN solution, it does not affect the etching process of the substrate W by the chemical solution L1. As a result, it becomes possible to further improve the in-plane uniformity when etching the substrate W with chemical solution L1.

[0053] Furthermore, other solvents with a relatively low water content may be used as the coolant L2. For example, if the film formed on the main surface Wm of the substrate W is a molybdenum film and the chemical solution L1 is PAN solution, the molybdenum oxidized by nitric acid is etched by phosphoric acid and water. In other words, the amount of water affects the etching rate. Therefore, by using a solvent with a relatively low water content, it becomes possible to etch the molybdenum film at a predetermined etching rate.

[0054] In the above example, the temperature of the coolant L2 is measured by the temperature sensor 34. Since the heat capacity of the coolant L2 is greater than that of the substrate W, the temperature of the substrate W can be indirectly measured by measuring the temperature of the coolant L2. Therefore, it is possible to determine whether or not the cooling of the substrate W is complete based on the temperature of the coolant L2 measured by the temperature sensor 34.

[0055] [Differentiation] The disclosures herein should be considered in all respects to be illustrative and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and the gist thereof.

[0056] (1) As illustrated in Figure 6, the cooling apparatus 30 may be configured to cool the substrate W with a cooling gas G before it is immersed in the chemical solution L1 in the liquid apparatus 10. That is, instead of having a temperature control circulation unit 33 and a temperature sensor 34, the cooling apparatus 30 may further include a gas supply unit 35 and a temperature sensor SE (another measuring unit).

[0057] The gas supply unit 35 operates based on an operating signal from the controller Ctr and is configured to blow cooling gas G onto the substrate W. The gas supply unit 35 may include a gas source (not shown) for storing the cooling gas G and at least one discharge pipe 35a fluidly connected to the gas source. The cooling gas G stored in the gas source may be, for example, an inert gas or dry air (air that does not contain water vapor and carbon dioxide). The temperature of the cooling gas G may be set to be below the temperature T [°C] of the chemical solution L1, or to be around 20°C or below. In the example of Figure 6, the gas supply unit 35 includes four discharge pipes 35a, each of which may be located near each corner of the cooling tank 31 so as to extend along the direction in which the arm 32b of the holding member 32 extends.

[0058] The discharge pipe 35a may include a first row of outlets (not shown) arranged along its extending direction. The multiple first outlets constituting the first row of outlets may open toward the center side of the substrate W or toward the side where the substrate W is located. The discharge pipe 35a may also include a second row of outlets (not shown) arranged along its extending direction. The multiple second outlets constituting the second row of outlets may differ from the first outlets and open toward the inside of the cooling tank 31.

[0059] The temperature sensor SE is configured to non-contact measure the temperature of the substrate W held by the holding member 32 within the cooling tank 31 (container 31a). The temperature sensor SE is configured to transmit the measured temperature data of the substrate W to the controller Ctr. The temperature sensor SE may be, for example, a radiation thermometer or a thermographic camera.

[0060] In the substrate processing system 1 illustrated in Figure 6, the substrate W is processed as follows. Note that the process up to the point where the holding member 32 that holds the multiple substrates W descends into the cooling tank 31 is the same as in the example above, so its explanation is omitted.

[0061] When multiple substrates W are placed in the cooling tank 31 in a vertical position, the controller Ctr instructs the gas supply unit 35 to supply cooling gas G to the multiple substrates W (see Figure 6(I)). Alternatively, the controller Ctr may instruct the gas supply unit 35 in advance to lower the holding member 32 that holds the multiple substrates W into the cooling tank 31 while cooling gas G is being blown out. As a result, the substrates W are cooled by the cooling gas G. Subsequently, when the controller Ctr determines that the temperature of the substrates W measured by the temperature sensor SE is in the range of T-5[°C] to T[°C], the controller Ctr instructs the holding member 32 to raise the holding member 32 to the top of the cooling tank 31. Next, the controller Ctr instructs the transport mechanism 7 to hold the multiple substrates W in the holder 7c and transport them to the liquid processing device 10 (see Figure 6(II)).

[0062] Subsequently, as in the example above, the cooled substrates W are immersed vertically in the chemical solution L1 in the processing tank 11 and subjected to etching (see Figure 6(III)).

[0063] In the example shown in Figure 6, a cooling gas G is used instead of a liquid to cool the substrate W, so no liquid adheres to the substrate W. Therefore, no other liquids different from the chemical solution L1 are mixed into the chemical solution L1 in the processing tank 11, allowing the etching process of the substrate W by the chemical solution L1 to be performed more appropriately. Consequently, it becomes possible to further improve the in-plane uniformity when etching the substrate W with the chemical solution L1.

[0064] In the example shown in Figure 6, the substrate W is placed inside the cooling tank 31, and the cooling gas G is blown onto the substrate W. That is, since the cooling gas G is blown onto the substrate W while it is in the relatively narrow space of the cooling tank 31, the cooling efficiency of the substrate W is increased. Therefore, it becomes possible to further improve the in-plane uniformity when etching the substrate W with the chemical solution L1.

[0065] In the example shown in Figure 6, the temperature of the substrate W is measured non-contact using a non-contact temperature sensor SE. Therefore, since the temperature sensor SE does not affect the temperature of the substrate W, it is possible to more accurately determine whether or not the cooling of the substrate W is complete based on the temperature of the substrate W measured by the temperature sensor SE.

[0066] In the example shown in Figure 6, the substrate W may be placed inside the cooling tank 31 (container 31a), and the cooling gas G may be blown onto the substrate W with the opening 31c of the container 31a closed. In this case, since the cooling gas G is blown onto the substrate W in a nearly closed space, the cooling efficiency of the substrate W is further increased. Therefore, it becomes possible to further improve the in-plane uniformity when etching the substrate W with the chemical solution L1.

[0067] (2) As illustrated in Figure 7, a cooling gas G may be blown onto the substrates W located above the processing tank 11. In the example of Figure 7, the liquid processing apparatus 10 may further include a blower B (cooling unit) located above the processing tank 11. The blower B is configured to operate based on an operation signal from the controller Ctr and to generate a down blow directed towards the processing tank 11. That is, when the blower B operates with multiple substrates W located above the processing tank 11, the down blow from the blower B acts on the multiple substrates W as a cooling gas G. Therefore, in the example of Figure 7, the cooling gas G may be, for example, an inert gas or dry air (air that does not contain water vapor and carbon dioxide). In the example of Figure 7, as in the example of Figure 6, when the controller Ctr determines that the temperature of the substrates W measured by the temperature sensor SE is in the range of T-5[°C] to T[°C], the cooled multiple substrates W are immersed in the chemical solution L1 in the processing tank 11 in a vertical position and etched.

[0068] As illustrated in Figure 7(a), multiple substrates W may be positioned above the processing tank 11 while being held by the holder 7c of the transport mechanism 7. In this case, the lid member 11b may close the opening 11c of the container 11a. When the opening 11c is closed by the lid member 11b, the volatilization of the chemical solution L1 in the processing tank 11 is suppressed, so the components of the chemical solution L1 are less likely to fluctuate. Therefore, the etching treatment of the substrates W with the chemical solution L1 is performed more appropriately. Consequently, it is possible to further improve the in-plane uniformity when etching the substrates W with the chemical solution L1. Note that in the example of Figure 7(a), the lid member 11b may leave the opening 11c of the container 11a open.

[0069] As illustrated in Figure 7(b), the multiple substrates W may be positioned above the processing tank 11 while being held by the arms 12b of the holding member 12. In this case, the lid member 11b may open the opening 11c of the container 11a. When the lid member 11b opens the opening 11c, even if the holding member 12 that holds the multiple substrates W accidentally descends, it is prevented from colliding with the lid member 11b. Therefore, it is possible to prevent accidental damage to the substrates W. In the example of Figure 7(b), the lid member 11b may also close the opening 11c of the container 11a.

[0070] In the example in Figure 7, as in the example in Figure 6, a cooling gas G is used instead of a liquid to cool the substrate W, so no liquid adheres to the substrate W. Therefore, it is possible to further improve the in-plane uniformity when etching the substrate W with the chemical solution L1.

[0071] In the example shown in Figure 7, the substrate W is cooled above the processing tank 11, so after the substrate W has finished cooling, it is immediately immersed in the chemical solution L1 in the processing tank 11. Therefore, the temperature rise of the substrate W when it is transported to the processing tank 11 is significantly suppressed. Consequently, it becomes possible to further improve the in-plane uniformity when etching the substrate W with the chemical solution L1.

[0072] In the example in Figure 7, as in the example in Figure 6, the temperature of the substrate W is measured non-contact using a non-contact temperature sensor SE, making it possible to more accurately determine whether or not the cooling of the substrate W has been completed.

[0073] In the example shown in Figure 7(b), a cooling gas G is blown onto the substrate W, which is held by the arm 12b of the holding member 12, to cool the substrate W. After the substrate W is cooled, the holding member 12 moves into the processing tank 11 while still holding the substrate W. Therefore, the substrate W is immediately immersed in the chemical solution after it has cooled. Consequently, the temperature rise of the substrate W when it is transported to the processing tank 11 is suppressed more significantly. As a result, it becomes possible to further improve the in-plane uniformity when etching the substrate W with the chemical solution L1.

[0074] (3) As illustrated in Figure 8, the lot placement section 4 (another location) may further include a blower B. In this case, with one lot formed on the pre-processing lot placement table 4b, the blower B may be operated to blow down from the blower B as cooling gas G towards the multiple substrates W on the pre-processing lot placement table 4b (see Figure 8(I)). In the example of Figure 8, as in the example of Figure 6, when the controller Ctr determines that the temperature of the substrates W measured by the temperature sensor SE is in the range of T-5[°C] to T[°C], the controller Ctr instructs the transport mechanism 7 to hold the multiple substrates W in the holder 7c and transport them to the liquid processing device 10 (see Figure 8(II)).

[0075] Next, the controller Ctr instructs the transport mechanism 7 to transfer the multiple substrates W from the holder 7c to the arm 12b of the holding member 12, which is waiting above the processing tank 11. At this time, the controller Ctr instructs the lid member 11b in advance to retract the lid member 11b from the opening 11c of the processing tank 11, so that the opening 11c is open. In this state, the controller Ctr instructs the holding member 12 to lower the holding member 12 into the processing tank 11. As a result, the multiple substrates W, after cooling, are immersed in the chemical solution L1 in the processing tank 11 in a vertical position and etched (see Figure 8(III)).

[0076] In the example in Figure 8, as in the example in Figure 6, a cooling gas G is used instead of a liquid to cool the substrate W, so no liquid adheres to the substrate W. Therefore, it is possible to further improve the in-plane uniformity when etching the substrate W with the chemical solution L1.

[0077] In the example in Figure 8, as in the example in Figure 6, the temperature of the substrate W is measured non-contact using a non-contact temperature sensor SE, making it possible to more accurately determine whether or not the cooling of the substrate W has been completed.

[0078] In the example shown in Figure 8, the blower B was located on the rod mounting section 4, but at least one blower B may be located above the rail 7a, which is the transport path for the holder 7c. In this case, the down-blowing gas G from the at least one blower B may be blown as a cooling gas G onto the multiple substrates W held by the moving holder 7c.

[0079] [Other examples] Example 1. An example of a substrate processing apparatus comprises a processing tank configured to store a chemical solution, a holding member configured to hold a substrate having a metal film or inorganic film on its main surface in a position where the main surface is aligned vertically, and to immerse it in the chemical solution in the processing tank, and a cooling unit configured to cool the substrate before immersion in the chemical solution so that the temperature of the substrate is between T-5[°C] and T[°C] when the temperature of the chemical solution is T[°C].

[0080] Incidentally, when a substrate held by a holding member so that its main surface is aligned vertically (vertical position) is immersed in a chemical solution in a processing tank and etched, a difference in etching rate may occur between the upper and lower parts of the substrate. This is because lower temperature chemicals tend to accumulate at the bottom of the processing tank, so the upper part of the substrate is more easily etched by the relatively higher temperature chemical, while the lower part of the substrate is less easily etched by the relatively lower temperature chemical. This difference in etching rate between the upper and lower parts of the substrate tends to become more pronounced as the temperature of the chemical becomes higher. Therefore, etching a vertically positioned substrate using a low temperature chemical (for example, it may be 25°C or lower, or even 15°C or lower) can mitigate the difference in etching rate between the upper and lower parts of the substrate. However, using a low temperature chemical increases the temperature difference between the substrate and the chemical, so it takes time for the substrate's temperature to become uniform after it is immersed in the chemical. Specifically, the upper part of the substrate cools more slowly, resulting in a higher etching rate, which affects the in-plane uniformity of the substrate etching process.

[0081] However, with the apparatus in Example 1, the substrate is cooled to a temperature of T-5[°C] to T[°C] before being immersed in the chemical solution. Therefore, the substrate is immersed in the chemical solution when its temperature is approximately equal to that of the chemical solution. Consequently, even when etching a substrate with a low-temperature chemical solution, it becomes less likely for the temperature distribution within the substrate to be uneven. As a result, it becomes possible to improve the uniformity of the in-plane etching process when etching a substrate with a chemical solution.

[0082] Example 2. The apparatus of Example 1 further comprises another holding member configured to hold the substrate in a position where the main surface is aligned vertically, and the cooling unit includes a cooling tank configured to store a coolant set to a temperature of T-5[°C] to T[°C], and the other holding member may be configured to immerse the substrate in the coolant. In this case, since the substrate is cooled by a coolant with a higher specific heat than gas, the temperature distribution within the surface of the substrate tends to become uniform quickly. Therefore, it is possible to further improve the uniformity within the surface when etching the substrate with a chemical solution.

[0083] Example 3. In the apparatus of Example 2, the cooling unit may further include a circulation unit configured to supply the cooling liquid in the cooling tank back into the cooling tank, and a temperature control unit that adjusts the temperature of the cooling liquid circulated by the circulation unit to be between T-5[°C] and T[°C]. In this case, the circulation unit and the temperature control unit keep the temperature of the cooling liquid in the cooling tank substantially constant. Therefore, regardless of the number of substrates immersed in the cooling liquid in the cooling tank, it becomes less likely for the temperature distribution on the surface of the substrate to be uneven. As a result, it becomes possible to further improve the uniformity of the surface when etching the substrate with a chemical solution.

[0084] Example 4. In the apparatus of Example 3, the temperature control unit may be a thermoelectric cooler configured to cool the object using a thermoelectric cooling element, or a heat exchanger configured to cool the object using a circulating refrigerant. In this case, it becomes possible to control the temperature of the coolant with a relatively inexpensive device.

[0085] Example 5. In any of the apparatuses in Examples 2 to 4, the coolant may contain at least one selected from the group consisting of acetic acid, phosphoric acid, isopropyl alcohol, methanol, and ethanol. The melting points of these liquids are lower than 17°C, and they are less likely to freeze because they flow within the cooling tank. Therefore, these liquids, which remain liquid at low temperatures, can efficiently cool the substrate.

[0086] Example 6. Any of the devices in Examples 2 to 5 may further include a measuring unit configured to measure the temperature of the coolant. In this case, since the heat capacity of the coolant is greater than that of the substrate, the temperature of the substrate is indirectly measured by measuring the temperature of the coolant. Therefore, it is possible to determine whether or not the cooling of the substrate is complete based on the temperature of the coolant measured by the measuring unit.

[0087] Example 7. In the apparatus of Example 1, the cooling unit may include a gas supply unit configured to blow cooling gas onto the substrate. In this case, since cooling gas is used instead of liquid to cool the substrate, no liquid adheres to the substrate. Therefore, no other liquids different from the chemical solution are mixed into the chemical solution in the processing tank, and the etching process of the substrate with the chemical solution is performed more appropriately. Consequently, it becomes possible to further improve the in-plane uniformity when etching the substrate with the chemical solution.

[0088] Example 8. The apparatus of Example 7 further comprises another holding member configured to hold the substrate in a position where its main surface is aligned vertically, and the cooling unit further includes a cooling tank to which cooling gas from a gas supply unit is supplied, and the gas supply unit may be configured to blow cooling gas onto the substrate, which is held by the other holding member and placed in the cooling tank. In this case, since the cooling gas is blown onto the substrate while it is placed in the cooling tank, the cooling efficiency of the substrate is increased. Therefore, it is possible to further improve the in-plane uniformity when etching the substrate with a chemical solution.

[0089] Example 9. In the apparatus of Example 8, the cooling tank may include a bottomed container capable of housing a substrate held by another holding member together with the other holding member, and a lid member configured to open and close the opening of the bottomed container. In this case, the substrate is placed inside the bottomed container and cooling gas can be blown onto the substrate with the opening of the bottomed container closed. Therefore, the cooling efficiency of the substrate is increased. Consequently, it becomes possible to further improve the in-plane uniformity when etching the substrate with a chemical solution.

[0090] Example 10. In the apparatus of Example 7, the gas supply unit may be configured to blow cooling gas onto the substrate located above the processing tank. In this case, since the substrate is cooled above the processing tank, after the substrate has finished cooling, it is immediately immersed in the chemical solution in the processing tank. Therefore, the temperature rise of the substrate when it is transported to the processing tank is significantly suppressed. Consequently, it becomes possible to further improve the in-plane uniformity when etching the substrate with the chemical solution.

[0091] Example 11. The apparatus of Example 10 may further include a transport unit configured to transport substrates between the processing tank and another location, and the gas supply unit may be configured to blow cooling gas onto the substrates held by the transport unit such that the main surface is aligned vertically and is located above the processing tank. In this case, the same effects as in Example 10 can be obtained.

[0092] Example 12. In the apparatus of Example 10, the gas supply unit may be configured to blow cooling gas onto the substrate held by the holding member, such that the main surface is positioned vertically and above the processing tank. In this case, the cooling gas is blown onto the substrate held by the holding member to cool it, and then the holding member moves into the processing tank while still holding the substrate. Therefore, the substrate is immediately immersed in the chemical solution after cooling. Consequently, the temperature rise of the substrate when it is transported to the processing tank is suppressed even more significantly. As a result, it becomes possible to further improve the in-plane uniformity when etching the substrate with the chemical solution.

[0093] Example 13. In the apparatus of Example 7, the gas supply unit may be configured to blow cooling gas onto the substrate in a transport path where the substrate is transported between the processing tank and another location, or at another location. In this case, the same effects as in Example 7 can be obtained.

[0094] Example 14. Any of the devices in Examples 7 to 13 may further include another measuring unit configured to measure the temperature of the substrate non-contact. In this case, since the other measuring unit does not affect the temperature of the substrate, it becomes possible to more accurately determine whether the cooling of the substrate is complete based on the temperature of the substrate measured by the other measuring unit.

[0095] Example 15. An example of a substrate processing method includes cooling the substrate with a cooling unit so that the temperature of the substrate, which has a metal film or inorganic film on its main surface, is between T-5[°C] and T[°C], when the temperature of the chemical solution stored in the processing tank is T[°C], and then immersing the cooled substrate in the chemical solution in the processing tank while holding it with a holding member so that its main surface is aligned vertically. In this case, the same effects and advantages as the apparatus in Example 1 can be obtained. [Explanation of Symbols]

[0096] 1...Substrate processing system (substrate processing device), 4...Lot placement section (other location), 5...Lot processing section (substrate processing device), 7...Transportation mechanism (transportation section), 7a...Rail (transportation path), 7c...Holder (transportation section), 10...Liquid processing device, 11...Processing tank, 11a...Container, 11b...Lid member, 12...Holder member, 30...Cooling processing device (cooling section), 31...Cooling tank, 31a...Container (bottomed container), 31b...Lid member, 32...Holder member (another holder member), 33...Temperature control circulation section (temperature control section, circulation section), 33a...Piping (circulation section), 33b...Pump (circulation section), 33c...Temperature control section, 34...Temperature sensor (measurement section), 35...Gas supply section, SE...Temperature sensor (another measurement section), B...Blower (cooling section), Ctr...Controller (control section), L1...Chemical solution, L2...Cooling liquid, W...Substrate, Wm...Main surface.

Claims

1. A treatment tank configured to store chemical solution, A holding member configured to hold a substrate having a metal film or inorganic film on its main surface in a position where the main surface is aligned vertically, and to immerse the substrate in the chemical solution of the treatment tank, The substrate is held by another holding member configured to hold it in a position where the main surface is aligned vertically, The system includes a cooling unit configured to cool the substrate before it is immersed in the chemical solution, such that when the temperature of the chemical solution is T [°C], the temperature of the substrate is between T-5 [°C] and T [°C]. The cooling unit includes a cooling tank configured to store a cooling liquid set to a temperature of T-5 [°C] to T [°C], A substrate processing apparatus wherein the aforementioned other holding member is configured to immerse the substrate in the cooling liquid.

2. The cooling unit is A circulation unit configured to supply the coolant in the cooling tank back into the cooling tank, The apparatus according to claim 1, further comprising a temperature control unit that adjusts the temperature of the coolant circulating by the circulation unit to be between T-5 [°C] and T [°C].

3. The apparatus according to claim 2, wherein the temperature control unit is a thermoelectric cooler configured to cool an object using a thermoelectric cooling element, or a heat exchanger configured to cool an object using a circulating refrigerant.

4. The apparatus according to claim 1, wherein the coolant comprises at least one selected from the group consisting of acetic acid, phosphoric acid, isopropyl alcohol, methanol, and ethanol.

5. The apparatus according to any one of claims 1 to 4, further comprising a measuring unit configured to measure the temperature of the coolant.

6. A treatment tank configured to store chemical solution, A holding member configured to hold a substrate having a metal film or inorganic film on its main surface in a position where the main surface is aligned vertically, and to immerse the substrate in the chemical solution of the treatment tank, The system includes a cooling unit configured to cool the substrate before it is immersed in the chemical solution, such that when the temperature of the chemical solution is T [°C], the temperature of the substrate is between T-5 [°C] and T [°C]. The cooling unit is A gas supply unit configured to blow cooling gas onto the substrate, The cooling tank to which the cooling gas from the gas supply unit is supplied, The cooling tank is A bottomed container capable of housing the substrate, which is held by another holding member configured to hold the main surface in a position aligned with the vertical direction, together with the other holding member, A substrate processing apparatus comprising a lid member configured to be able to open and close the opening of the bottomed container.

7. The apparatus according to claim 6, wherein the gas supply unit is configured to blow the cooling gas onto the substrate, which is held by the other holding member and placed in the cooling tank.

8. The apparatus according to claim 6, wherein the gas supply unit is configured to blow the cooling gas onto the substrate located above the processing tank.

9. The system further comprises a transport unit configured to transport the substrate between the processing tank and another location, The apparatus according to claim 8, wherein the gas supply unit is configured to blow the cooling gas onto the substrate held by the transport unit such that the main surface is positioned in a vertical orientation and is located above the processing tank.

10. The apparatus according to claim 8, wherein the gas supply unit is configured to blow the cooling gas onto the substrate held by the holding member such that the main surface is positioned vertically and above the processing tank.

11. A treatment tank configured to store chemical solution, A holding member configured to hold a substrate having a metal film or inorganic film on its main surface in a position where the main surface is aligned vertically, and to immerse the substrate in the chemical solution of the treatment tank, The system includes a cooling unit configured to cool the substrate before it is immersed in the chemical solution, such that when the temperature of the chemical solution is T [°C], the temperature of the substrate is between T-5 [°C] and T [°C]. The cooling unit includes a gas supply unit configured to blow cooling gas onto the substrate, A substrate processing apparatus, wherein the gas supply unit is configured to blow cooling gas onto the substrate in a transport path where the substrate is transported between the processing tank and another location, or at the other location.

12. The apparatus according to any one of claims 6 to 11, further comprising another measuring unit configured to measure the temperature of the substrate in a non-contact manner.

13. When the temperature of the chemical solution stored in the treatment tank is T [°C], the substrate, which has a metal film or inorganic film on its main surface, is cooled by the cooling unit so that its temperature is between T-5 [°C] and T [°C]. The process includes holding the substrate, after cooling by the cooling unit, with a holding member so that the main surface is aligned vertically, and immersing it in the chemical solution in the processing tank, A substrate processing method comprising cooling the substrate with the cooling unit, which includes holding the substrate with another holding member so that the main surface is in a position aligned with the vertical direction, and immersing it in the cooling liquid stored in a cooling tank set to a temperature of T-5 [°C] to T [°C].

14. When the temperature of the chemical solution stored in the treatment tank is T [°C], the substrate, which has a metal film or inorganic film on its main surface, is cooled by the cooling unit so that its temperature is between T-5 [°C] and T [°C]. The process includes holding the substrate, after cooling by the cooling unit, with a holding member so that the main surface is aligned vertically, and immersing it in the chemical solution in the processing tank, Cooling the substrate by the cooling unit includes blowing cooling gas onto the substrate placed in the cooling tank using the gas supply unit. The cooling tank is A bottomed container capable of housing the substrate, which is held by another holding member configured to hold the main surface in a position aligned with the vertical direction, together with the other holding member, A substrate processing method comprising a lid member configured to be able to open and close the opening of the bottomed container.

15. When the temperature of the chemical solution stored in the treatment tank is T [°C], the substrate, which has a metal film or inorganic film on its main surface, is cooled by the cooling unit so that its temperature is between T-5 [°C] and T [°C]. The process includes holding the substrate, after cooling by the cooling unit, with a holding member so that the main surface is aligned vertically, and immersing it in the chemical solution in the processing tank, Cooling the substrate by the cooling unit includes blowing cooling gas onto the substrate by the gas supply unit. A substrate processing method wherein the gas supply unit is configured to blow cooling gas onto the substrate in a transport path where the substrate is transported between the processing tank and another location, or at the other location.

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