In-line filtration for steam applications

Abstract

To provide a method for selectively oxidizing a material of a substrate, which is a selective oxidation process using steam oxidation without introducing particle contaminants into an oxide layer.SOLUTION: In a method for selectively oxidizing a material of a substrate, according to the present invention: the substrate is disposed in a chamber; a hydrogen containing gas is introduced to the chamber, wherein the hydrogen containing gas is directed through a filter to the chamber, and wherein the filter is configured to filter particles greater than about 1 nm; the chamber is pressurized to a pressure of about 250 Torr to about 800 Torr while the hydrogen containing gas is maintained in the chamber; and the chamber is heated to a predetermined temperature for a predetermined period of time while the hydrogen containing gas is maintained in the chamber, and the substrate is selectively oxidized.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to the field of semiconductor manufacturing, and in particular relate to methods and apparatuses for selective oxidation of composite silicon / metal films.

Background Art

[0002]

[0002] In the manufacture of semiconductor devices, oxidation of silicon-containing substrates plays an important role. For example, in a standard semiconductor device, a gate oxide layer is typically located on a substrate including a source region, a drain region, and an intervening silicon or polysilicon region. Metal contacts are deposited over the source and drain regions, and a conductive layer is deposited over the gate oxide. The entire structure is often depicted as a stack of layers. When a voltage is applied across the gate oxide to generate an electric field directed along an axis from the substrate through the gate oxide to the conductive layer, the electrical properties of the region between the source region and the drain region change, either enabling or stopping the flow of electrons between these regions. Therefore, the gate oxide layer plays an important role in the structure of semiconductor devices.

[0003]

[0003] Unfortunately, oxide layers can be damaged during processing, in which case the oxide layer can be repaired by reoxidizing the device. Reoxidation forms a thin oxide layer on the side surfaces of the gate oxide and the underlying silicon-containing layer, repairing edge damage. Since oxidation of other regions of a transistor reduces conductivity and can damage the device, it is useful to oxidize only specific materials of the device. Selective oxidation, such as wet oxidation, dry oxidation, or vapor oxidation, targets specific materials such as silicon and silicon oxide, while avoiding oxidation of other materials.

[0004]

[0004] Unfortunately, vapors tend to dissolve and / or carry particles through condensation and vaporization. Therefore, vapor oxidation can introduce particles into the device, such as dissolved organic particles, precursor particles, or particles in seals and / or seat valves, potentially impairing the device's function. Furthermore, high chamber pressure and high vapor ratio can increase particle contamination, limiting the operating conditions for vapor oxidation.

[0005]

[0005] Therefore, there is still a need for a selective oxidation process using vapor oxidation that does not introduce particulate contaminants into the oxide layer. [Overview of the project]

[0006]

[0006] This disclosure provides a method for the selective oxidation of a substrate. The substrate is placed in a chamber. A hydrogen-containing gas is introduced into the chamber. The hydrogen-containing gas is introduced into the chamber through a filter. The filter is configured to remove particles larger than about 1 nm. While maintaining the hydrogen-containing gas in the chamber, the chamber is pressurized to a pressure in the range of about 250 Torr to about 800 Torr. While maintaining the hydrogen-containing gas in the chamber, the chamber is heated to a predetermined temperature for a predetermined time. The substrate is selectively oxidized.

[0007]

[0007] The disclosure also provides a method for processing a substrate. The substrate is placed in a rapid heat treatment (RTP) chamber. A non-reactive gas is introduced into the chamber. A hydrogen-containing gas is introduced into the chamber. The hydrogen-containing gas is introduced into the chamber through a filter. The filter is configured to remove particles larger than about 1 nm. While maintaining the hydrogen-containing gas in the chamber, the chamber is pressurized to a pressure higher than about 250. While maintaining the hydrogen-containing gas in the chamber, the chamber is heated to a processing temperature. The substrate is selectively oxidized.

[0008]

[0008] The disclosure also provides a method for processing a substrate. The method includes at least a silicon-containing layer and a metal layer in a chamber. A hydrogen-containing gas is introduced into the chamber. The hydrogen-containing gas is introduced into the chamber through a filter. The filter is configured to remove particles larger than about 1 nm. While maintaining the hydrogen-containing gas in the chamber, the chamber is pressurized to a pressure higher than about 250 Torr. The silicon-containing layer is selectively oxidized.

[0009]

[0009] To allow for a more detailed understanding of the above-mentioned features of this disclosure, a more specific description of this disclosure, which has been briefly summarized above, can be given by reference to embodiments, some of which are shown in the accompanying drawings. However, it should be noted that since this disclosure may also permit other equally valid embodiments, the accompanying drawings illustrate only typical embodiments of this disclosure and should therefore not be considered limiting in scope. [Brief explanation of the drawing]

[0010] [Figure 1]

[0010] This is a diagram of a rapid heating device according to one of the embodiments of the present disclosure. [Figure 2A]

[0011] This is a diagram of a filtration module according to several embodiments of the present disclosure. [Figure 2B]

[0012] This is a diagram of a heated filtration module according to several embodiments of the present disclosure. [Figure 3]

[0013] This flowchart shows one embodiment of selective oxidation according to multiple embodiments of the present disclosure. [Figure 4A]

[0014] This is a cross-sectional view of a substrate before applying a selective oxidation process according to one embodiment of the present disclosure. [Figure 4B]

[0015] This is a cross-sectional view of a substrate after applying a selective oxidation process according to one embodiment of the present disclosure. [Figure 5]

[0016] This graph shows the particle concentration after vapor oxidation. [Figure 6]

[0017] This graph shows the particle concentration after vapor oxidation using a filtration module. [Figure 7]

[0018] This graph shows the particle concentration after vapor oxidation, with and without the use of a filtration module. [Modes for carrying out the invention]

[0011]

[0019] This disclosure describes a method for selectively oxidizing silicon-containing material in a substrate using a filtration module. The filtration module can reduce the concentration of oxide layers and / or particles in the device, thereby improving device performance. Furthermore, the filtration module may be operated to prevent pressure drops, thereby maintaining the temperature and pressure of the steam (e.g., hydrogen-containing steam) introduced into the processing chamber to promote efficient steam oxidation. This disclosure will be described below with reference to a rapid heating chamber, but it should be understood that this disclosure can be similarly implemented in one or more other chambers.

[0012]

[0020] Figure 1 shows a rapid heating apparatus 100 that may be used to carry out the process of the present disclosure. The apparatus features a process chamber 102 that can be exhausted or filled with a selected gas, as well as a side wall 104 and a lower enclosure 106. The upper portion of the side wall is sealed to a light pipe assembly 108. Radiant energy is directed from the light pipe assembly 108 into the chamber. The light pipe assembly 108 includes a plurality of tungsten halogen lamps 110, such as Sylvania EYT lamps, each lamp mounted in a light pipe 112. The light pipe 112 may be made of stainless steel, brass, aluminum, or other metal.

[0013]

[0021] The substrate 114 is supported within the process chamber 102 by a support ring 116 that contacts the edge of the substrate. The support ring 116 is made of a material that can withstand high temperatures, such as silicon carbide, without introducing impurities to the substrate. The support ring 116 may be mounted on a rotating cylinder 118. In one embodiment, a quartz rotating cylinder may be used that can rotate the support ring and the substrate on the support ring. Rotation of the substrate promotes a uniform temperature distribution.

[0014]

[0022] Process gas can be introduced into the chamber through a representative portal 120 and exhausted through a representative portal 122. In some embodiments, multiple gas supply and exhaust portals may be used. The temperature controller 124 receives measurements from the pyrometer 126 and adjusts the power to the lamp 110 to ensure uniform heating.

[0015]

[0023] The side inlet 128 may be fluid-coupled to the process chamber 102. The side inlet 128 may include one or more nozzles or inlet ports, or alternatively a showerhead, for injecting one or more gases, such as hydrogen, steam, and / or oxygen. In one embodiment, the side inlet 128 is fluid-coupled to a filtration module (not shown), which is described below with reference to Figure 2. For example, the filtration module (not shown) may inject one or more gases through the side inlet 128.

[0016]

[0024] Figure 2A shows a filtration module 200. The filtration module 200 may include a filter 202. The filter 202 may include stainless steel, such as a stainless steel medium (e.g., mesh or wool). Through this stainless steel, the fluid is guided to facilitate filtration. The filter 202 may include a separator, mesh, or other sized separation component suitable for separating particles or contaminants based on particle size. In one embodiment, the filter 202 may prevent particles having a size larger than 1 nm, for example, larger than 1 nm, larger than 5 nm, larger than 10 nm, larger than 100 nm, larger than 1 μm, larger than 10 μm, larger than 100 μm, or larger from passing through the filter 202. Without being constrained by theory, preventing particles having a size of 1 nm or larger from passing through can result in a reduction of particulate contaminants in the processing chamber (and therefore on the substrate), thereby improving device performance.

[0017]

[0025] In one embodiment, the filter 202 may contain pressures from about 400 Torr to about 600 Torr, for example, from about 400 Torr to about 450 Torr, from about 450 Torr to about 500 Torr, from about 500 Torr to about 550 Torr, or from about 550 Torr to about 600 Torr. The filter 202 may result in a pressure drop from about 1 Torr to about 10 Torr, for example, from about 1 Torr to about 3 Torr, from about 3 Torr to about 6 Torr, from about 6 Torr to about 9 Torr, or from about 7 Torr to about 10 Torr.

[0018]

[0026] The filter 202 can receive gas from the carrier manifold 204. The carrier manifold 204 can guide one or more gases, for example, steam, hydrogen, and / or oxygen, from the valve manifold 206 to the filter 202. The carrier manifold 204 may include any tube, casing, or flow path capable of transferring one or more gases, for example, hydrogen, steam, and / or oxygen, to the filter 202. The carrier manifold 204 may have a pressure of from about 400 Torr to about 600 Torr, for example, from about 400 Torr to about 450 Torr, from about 450 Torr to about 500 Torr, from about 500 Torr to about 550 Torr, or from about 550 Torr to about 600 Torr.

[0019]

[0027] The carrier manifold 204 can receive one or more gases from the valve manifold 206. The valve manifold 206 may include a plurality of valves, for example, gate valves, butterfly valves, needle valves, diaphragm valves, pinch valves, check valves, plug valves, or combinations thereof. The plurality of valves may include one or more sealing components and / or seats to prevent gas flow to the carrier manifold 204. In one embodiment, during operation, the plurality of valves can adjust and / or control the flow rate of one or more gases, for example, steam, hydrogen, or oxygen, into the carrier manifold 204.

[0020]

[0028] FIG. 2A shows an exemplary embodiment of the filtration module 200, but the filtration module 200 may be adapted in any suitable manner. For example, the filter 202 may be arranged downstream of the valve manifold 206, for example, may be arranged between the side inlet 128 and the valve manifold 206. Alternatively, the filter 202 may be arranged upstream of the valve manifold 206 (not shown).

[0021]

[0029] In one embodiment, the filtration module 200 may include one or more sensors (not shown). For example, the one or more sensors may include pressure sensors. In a further embodiment, the one or more sensors may include temperature sensors. In one embodiment, the one or more sensors may be placed at any position within the filtration module 200.

[0022]

[0030] Figure 2B shows a filtration module 200 including one or more heaters, indicated as heaters 208a, 208b, 208c, or 208d. In one embodiment, any of the side inlet, filter, carrier manifold, and / or valve manifold may be heated by heaters 208a, 208b, 208c, or 208d. The heaters raise the temperature of the filtration module 200 to a range of about 80°C to about 140°C, for example, about 80°C to about 90°C, about 90°C to about 100°C, about 100°C to about 110°C, about 110°C to about 120°C, about 120°C to about 130°C, and about 130°C to about 140°C. Without being constrained by theory, heaters 208a-d may reduce condensation within the filtration module 200, thereby reducing the amount of dissolved contaminants in one or more gases. In one embodiment, the heater 208a, 208b, 208c, or 208d is a jacket that can be heated using a resistance heater or a fluid.

[0023]

[0031] Figure 3 is a flowchart illustrating a method for selectively oxidizing a substrate according to the present disclosure. The first step in process 310 is to purge any reactive gases from the chamber. The purging avoids undesirable chemical reactions on the substrate during the preparation phase of the oxidation treatment, in which temperature and pressure may be increased. The objective of the present disclosure is to oxidize only the silicon-containing layer of a substrate, which includes a silicon-containing layer, a metal layer, and optionally a barrier layer or capping layer. To achieve this objective, the composition of the gases in the process chamber can be controlled during any process step characterized by increased temperature or pressure. The purging is achieved by pumping out all gases from the chamber and then flowing a non-reactive gas into the chamber to create a non-reactive gas atmosphere within the process chamber. The non-reactive gases do not react with any substrate material during the treatment. The non-reactive gases in the process of the present disclosure include, but are not limited to, nitrogen gas (N2), helium (He), argon (Ar), neon (Ne), and xenon (Xe).

[0024]

[0032] A substrate having multiple layers of silicon-containing material, metal, and optionally a barrier layer or capping layer is placed in the chamber in the next step of process 312. The layers can be patterned to form a device structure such as a transistor on the substrate. Figure 4A shows a typical gate transistor structure 400. A doped silicide region 402 is located within a polysilicon domain 404 of the substrate. The doped silicide region 402 forms the source and drain regions for the transistor. Multiple layers of polysilicon 406, gate oxide 408, barrier material 410, metal contacts 412, and protective material or hard mask material 414 may be deposited on top of the doped silicide region 402. Furthermore, although not shown, the metal contacts may be deposited directly on top of the doped silicide region with or without a barrier or nucleation layer in between. The process of this disclosure selectively oxidizes only the polysilicon layer and the gate oxide layer, along with other silicon-containing areas of the substrate, without oxidizing the metal or other layers.

[0025]

[0033] The substrate can be introduced into the process chamber through a slit valve within the chamber. A transfer robot, configured as part of a processing cluster or platform, can be used to load the substrate into the chamber. Alternatively, a tray loader may be used, along with a cartridge device for sequentially loading and unloading multiple substrates. Furthermore, a carousel arrangement can be used to transport the substrate in and out of the process chamber as part of a rotary processing cluster, or a linear processing assembly may be used.

[0026]

[0034] Referring again to Figure 3A, the substrate, supported on a support ring in a process chamber under a non-reactive atmosphere, then undergoes a temperature and pressure ramp-up step 314. Before ramping up the temperature and pressure, a hydrogen-containing gas, such as vapor filtered through a filtration module, may be supplied to the process chamber via a side inlet. Alternatively, a non-reactive atmosphere may be maintained during ramp-up by flowing non-reactive gas in and out of the process chamber. The pressure in the chamber may be precisely controlled, and as the temperature rises, the flowing gas can remove any escapes that may leak from the substrate. The temperature and pressure may be ramped up simultaneously or continuously in any pattern to desired predetermined process conditions. The temperature ramp (slope) may be designed to provide the additional benefit of annealing any of the various layers of the substrate. For example, the pressure may be from about 150 Torr to about 800 Torr, e.g., from about 250 Torr to about 600 Torr, or from about 400 Torr to about 500 Torr. In a further embodiment, the temperature may be higher than 700°C, for example, from about 800°C to about 1000°C, or from about 900°C to about 1000°C.

[0027]

[0035] Referring again to Figure 3A, a hydrogen-containing gas, for example, vapor filtered through a filtration module, may be supplied to the process chamber before or after the temperature and pressure ramp-up in step 318. Without being constrained by theory, water molecules may diffuse into the crystalline network of the silicon-containing material and release hydrogen at Si-Si or Si-SiO2 bonds. In step 320, the process is continued until a predetermined endpoint is reached, such as a specific amount of time. In step 322, the temperature is lowered and the chamber is evacuated to remove the reactive species. To complete the process, in step 324, a non-reactive gas is supplied to the chamber again, and then in step 326, the substrate is removed.

[0028]

[0036] In another alternative embodiment, a hydrogen-containing gas, such as filtered vapor from a filtration module, may be introduced into the chamber before reaching a desired temperature and pressure point, which has the potential advantage of passivating any metal layer on the substrate and further reducing the possibility of metal oxidation. In several other embodiments, a non-reactive gas or carrier gas may be used together with the hydrogen-containing gas, such as filtered vapor from a filtration module, and may be supplied separately or together with either gas. The gases may be mixed outside the reaction chamber or supplied individually to the chamber. The use of a non-reactive gas may facilitate mixing and selectivity.

[0029]

[0037] The reaction is driven by temperature and pressure within the reaction zone. The reaction zone is heated by convection from the high-temperature substrate and by the energy released from the oxidation reaction. Therefore, the temperature required to drive the reaction is very close to the substrate surface. In some embodiments, the reaction may be limited to a zone up to 1 cm from the substrate surface. Without being constrained by theory, temperatures above 700°C may help to accelerate selective oxidation reactions. In one embodiment, the temperature may be controlled by a sensor placed in the chamber and connected to a temperature controller that changes the power to a heat lamp.

[0030]

[0038] In one embodiment, a hydrogen-containing gas is maintained in the processing chamber for a set amount of time. In one embodiment, for example, the growth of a thin film of oxide on the silicon-containing material of the substrate can be achieved for only about 20 angstroms to about 50 angstroms. For example, the set amount of time may include a duration of about 1 to about 5 minutes. Figure 4B shows the device structure 420 after selective oxidation has been performed. The oxide layer 416 may grow adjacent to the silicon-containing layer of the structure. The process of this disclosure can achieve oxidation selectivity of polysilicon and silicon dioxide to metallic tungsten of up to 99.6%. When the endpoint is reached, the temperature may be lowered, the reaction chamber may be pumped out, and a non-reactive gas may be supplied. The chamber may be briefly purged to ensure that the reactive gas does not continue to potentially degrade the substrate, and the substrate is then removed from the chamber for further processing.

[0031]

[0039] Using the aforementioned process, many silicon-containing materials on a substrate can be selectively oxidized with reduced levels of particulate contamination. Such silicon-containing materials include, but are not limited to, polysilicon (or polycrystalline silicon), doped silicon, microcrystalline silicon, doped microcrystalline silicon, amorphous silicon, doped amorphous silicon, doped or undoped common silicon, materials that do not fall under any of the former labels, partially oxidized silicon materials substantially containing silicon dioxide (SiO2), and combinations thereof. Similarly, many common metal conductors and barrier or protective layers can also safely undergo this process. Metal layer compositions that do not oxidize under such conditions include, but are not limited to, aluminum (Al), copper (Cu), tungsten (W), tungsten nitride (WN), titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), tantalum carbonitride (TaCN), and combinations thereof.

[0032] Multiple Examples

[0040] Next, referring to Figure 5, the concentration of particulate contaminants was measured when the concentration of unfiltered vapor was varied. Particles were measured based on a 32 nm section. When the vapor percentage exceeded 22% v / v of the side-injection gas, the concentration of particulate contaminants exceeded an average of 200 particles. Furthermore, as the vapor percentage increased, the particle concentration increased. For example, at 25% v / v of the side-injection gas, the concentration of particulate contaminants increased to a maximum of 1400 particles.

[0033]

[0041] Next, referring to Figure 6, the concentration of particulate contaminants was measured when the concentration of filtered steam was varied. Particles were measured based on a 32 nm section. At a steam ratio of 22% v / v of the side-injection gas, the average concentration of particulate contaminants ranged from approximately 7 to 14 particles. Furthermore, as the steam ratio increased, the concentration of particulate contaminants was maintained below 15 particles. For example, at a side-injection gas of 46% v / v, the concentration of particulate contaminants ranged from approximately 2 to 12 particles. Without being constrained by theory, filtered steam enabled a reduction in particulate contaminants even when operating at higher steam concentrations.

[0034]

[0042] Next, referring to Figure 7, the concentration of particulate contaminants was measured using filtration modules positioned downstream and upstream of the valve manifold. The filtration module positioned downstream of the valve manifold resulted in a concentration of approximately 0 particulate contaminants in the 32 nm section. Furthermore, the filtration module positioned upstream of the valve manifold also resulted in a concentration of approximately 0 particulate contaminants in the 32 nm section. Alternatively, if no filtration modules were implemented in the device 100, the concentration of particulate contaminants was approximately 3500 to 4300 particles in the 32 nm section. Without being constrained by theory, the position of the filtration module upstream or downstream of the valve manifold can reduce the concentration of particulate contaminants and thereby improve device performance.

[0035]

[0043] Multiple embodiments of the present disclosure relating to a method and apparatus for the selective oxidation of composite silicon / metal films have been described. A filtration module can reduce the concentration of particles in the oxide layer and / or within the device, thereby improving device performance. Furthermore, the filtration module may be operated to prevent a pressure drop, thereby maintaining the temperature and pressure of the steam introduced into the processing chamber to promote efficient steam oxidation.

[0036]

[0044] While the foregoing covers several embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the fundamental scope of the present disclosure. The scope of the present disclosure is defined by the following claims.

Claims

1. A method for selectively oxidizing the substrate material, Placing the substrate inside the chamber, Introducing a hydrogen-containing gas into the chamber, wherein the hydrogen-containing gas is introduced into the chamber through a filter, the filter is configured to remove particles larger than 1 nm, and is equipped with one or more heaters, the heaters being configured to heat the filter. While maintaining the hydrogen-containing gas inside the chamber, pressurize the chamber to a pressure within the range of 250 Torr to 800 Torr. The process involves maintaining the hydrogen-containing gas inside the chamber while heating the chamber to a predetermined temperature for a predetermined period of time, and A method comprising selectively oxidizing the substrate.

2. The method according to claim 1, wherein the hydrogen-containing gas is vapor.

3. The method according to claim 1, wherein the predetermined temperature is higher than 700°C.

4. The method according to claim 1, wherein the filter is configured to remove particles larger than 5 nm.

5. The method according to claim 1, wherein the filter comprises stainless steel.

6. The method according to claim 1, wherein the heater is configured to heat the filter to a temperature in the range of 80°C to 140°C.

7. The method according to claim 1, wherein selectively oxidizing the substrate includes oxidizing only the silicon-containing material.

8. The silicon-containing material includes silicon, doped silicon, polysilicon, doped polysilicon, amorphous silicon, doped amorphous silicon, microcrystalline silicon, doped microcrystalline silicon, and silicon dioxide (SiO₂). 2 The method according to claim 7, which includes, or a combination thereof.

9. The method according to claim 1, wherein when the hydrogen-containing gas is introduced through the filter, the filter includes a pressure in the range of 400 Torr to 600 Torr.

10. A method for selectively oxidizing a substrate material, Placing the substrate inside the chamber, Introducing a hydrogen-containing gas into the chamber, wherein the hydrogen-containing gas is introduced into the chamber through a filter, and the filter is configured to remove particles larger than 1 nm. While maintaining the hydrogen-containing gas inside the chamber, pressurize the chamber to a pressure within the range of 250 Torr to 800 Torr. Maintaining the hydrogen-containing gas inside the chamber while heating the chamber to a predetermined temperature for a predetermined period of time. Selectively oxidizing the substrate, and A method comprising introducing the hydrogen-containing gas through the filter, wherein the filter generates a pressure drop in the range of 1 Torr to 10 Torr.

11. A method for processing a substrate, Placing the substrate inside a rapid heat treatment (RTP) chamber, Introducing a non-reactive gas into the chamber, Introducing a hydrogen-containing gas into the chamber, wherein the hydrogen-containing gas is introduced into the chamber through a filter, the filter is configured to remove particles larger than 1 nm, and is equipped with one or more heaters, the heaters being configured to heat the filter. While maintaining the hydrogen-containing gas inside the chamber, pressurize the chamber to a pressure higher than 250 Torr. While maintaining the hydrogen-containing gas inside the chamber, the chamber is heated to the processing temperature, and A method comprising selectively oxidizing the substrate.

12. The method according to claim 11, wherein the hydrogen-containing gas is vapor.

13. The method according to claim 11, wherein the filter comprises stainless steel.

14. The method according to claim 11, wherein the heater is configured to heat the filter to a temperature in the range of 80°C to 140°C.

15. The method according to claim 11, wherein selectively oxidizing the substrate includes oxidizing only the silicon-containing material.

16. The method according to claim 11, wherein when the hydrogen-containing gas is introduced through the filter, the filter includes a pressure in the range of 400 Torr to 600 Torr.

17. A method for processing a substrate, Placing the substrate inside a rapid heat treatment (RTP) chamber, Introducing a non-reactive gas into the chamber, Introducing a hydrogen-containing gas into the chamber, wherein the hydrogen-containing gas is introduced into the chamber through a filter, and the filter is configured to remove particles larger than 1 nm. While maintaining the hydrogen-containing gas inside the chamber, pressurize the chamber to a pressure higher than 250 Torr. While maintaining the hydrogen-containing gas inside the chamber, the chamber is heated to the processing temperature. Selectively oxidizing the substrate, and A method comprising introducing the hydrogen-containing gas through the filter, wherein the filter generates a pressure drop in the range of 1 Torr to 10 Torr.

18. A method for processing a substrate in a chamber, wherein the substrate comprises at least a silicon-containing layer and a metal layer, and the method is Introducing a hydrogen-containing gas into the chamber, wherein the hydrogen-containing gas is introduced into the chamber through a filter, the filter is configured to remove particles larger than 1 nm, and is equipped with one or more heaters, the heaters being configured to heat the filter. While maintaining the hydrogen-containing gas inside the chamber, pressurize the chamber to a pressure higher than 250 Torr, and A method comprising selectively oxidizing the silicon-containing layer.

19. A method for processing a substrate in a chamber, wherein the substrate comprises at least a silicon-containing layer and a metal layer, and the method is Introducing a hydrogen-containing gas into the chamber, wherein the hydrogen-containing gas is introduced into the chamber through a filter, and the filter is configured to remove particles larger than 1 nm. While maintaining the hydrogen-containing gas inside the chamber, pressurize the chamber to a pressure higher than 250 Torr. Selective oxidation of the silicon-containing layer, and A method comprising introducing the hydrogen-containing gas through the filter, wherein the filter generates a pressure drop in the range of 1 Torr to 10 Torr.

20. The method according to claim 18 or 19, wherein the hydrogen-containing gas is vapor.

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