Self-organizing lithography

Abstract

A method for forming a device includes blending a first liquid including a first block copolymer with a second liquid including a second block copolymer in a mixer in a manufacturing facility to form a first mixture. The first block copolymer includes a first homopolymer and a second homopolymer, the first homopolymer having a first mole fraction in the first liquid. The second block copolymer includes a first homopolymer and a second homopolymer, the first homopolymer having a second mole fraction in the second liquid, the first mole fraction being different from the second mole fraction. The method includes placing a substrate on a substrate holder in a processing chamber in the manufacturing facility and coating the substrate with the first mixture in the processing chamber.

Description

Technical Field

[0001] Cross-Reference to Related Applications This application claims the benefit of U.S. Non-Provisional Patent Application No. 17 / 155,931 filed on January 22, 2021, the entire content of which is incorporated herein by reference.

[0002] The present invention relates generally to semiconductor processing, and in certain embodiments to systems, tools and methods for directed self-assembly lithography.

Background Art

[0003] In general, the fabrication of integrated circuits (ICs) requires forming a large number of device elements on a semiconductor substrate. Conventionally, ICs are manufactured using photolithography. Photolithography forms device elements by: forming a layer of photoresist on a substrate; exposing portions of the photoresist to light through a patterned mask; developing the exposed photoresist to define a mask pattern in the photoresist; and then etching the photoresist to form the pattern in the substrate.

[0004] Semiconductor technology is driven by the demand to double circuit density every two years. As circuit density increases, the critical dimensions and pitch of IC device elements decrease. Critical dimensions and pitch have shrunk to the point where photolithography-based processes use multiple patterning techniques to achieve the required critical dimensions, which increases the cost of the manufacturing process. In addition, future technology nodes may require even more complex multiple patterning steps.

[0005] Directed self-assembly (DSA) is considered an alternative method for forming more densely packed devices. The DSA process is controlled by the molecular weight of the block copolymer mixture and can be set to desired dimensions that are theoretically smaller than those achievable with photolithography.

[0006] This is because self-assembly lithography allows for the formation of small device elements using block copolymers that self-assemble along guide patterns formed using a lithography process. However, while the subsequent self-assembly lithography process may form features with limit dimensions comparable to those achieved by multiple patterning processes, the guide patterns are patterned using a coarser lithography process.

[0007] However, self-assembly lithography has its own advantages and disadvantages. As mentioned above, the feature size in a self-assembly lithography process is determined by the mixture of block copolymers used. More specifically, in a typical self-assembly lithography process, the molecular weight of the block copolymer mixture controls the limiting dimensions, pitch, and phase (shape) of the device elements formed. A single block copolymer mixture can only accommodate a single limiting dimension, pitch, and shape. While this characteristic can be leveraged to develop features that cannot be easily formed by lithography, the DSA process presents its own set of challenges. [Overview of the project] [Means for solving the problem]

[0008] According to embodiments of the present invention, a method for forming a device comprises blending a first liquid containing a first block copolymer with a second liquid containing a second block copolymer in a mixer in a manufacturing facility to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer, the first homopolymer having a first mole fraction in the first liquid, the second block copolymer comprises a first homopolymer and a second homopolymer, the first homopolymer having a second mole fraction in the second liquid, the first mole fraction being different from the second mole fraction, placing a substrate on a substrate holder in a processing chamber in a manufacturing facility, and coating the substrate with the first mixture in the processing chamber.

[0009] According to embodiments of the present invention, a method for forming a device comprises blending a first block copolymer and a solvent in a mixer in a manufacturing facility to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer; placing a substrate on a substrate holder in a processing chamber in a manufacturing facility; and coating the substrate with the first mixture in the processing chamber.

[0010] According to embodiments of the present invention, a method for forming a device comprises blending a first liquid containing a first block copolymer with a second liquid essentially containing a first homopolymer in a mixer in a manufacturing facility to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer; placing a substrate on a substrate holder in a processing chamber in a manufacturing facility; and coating the substrate with the first mixture in the processing chamber. [Brief explanation of the drawing]

[0011] Next, in order to fully understand the present invention and its advantages, the following description should be read in conjunction with the accompanying drawings.

[0012] [Figure 1]This invention shows a block copolymer coating tool according to an embodiment of this application. [Figure 2] This invention shows a block copolymer coating tool according to an embodiment of this application. [Figure 3A] The images show cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of this application, and the device after a patterned photoresist layer has been formed. [Figure 3B] The images show cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of this application, and the device after coating with a mixture containing a blended block copolymer. [Figure 3C] This invention shows cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of this application, and also shows the device after annealing. [Figure 3D] The cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of this application are shown, and the device after selective removal of multiple regions. [Figure 3E] The images show cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of this application, and the device after the first pattern of the device element has been formed. [Figure 4] This is a flowchart of a self-organizing lithography method for forming a first pattern of a device element according to an embodiment of this application. [Figure 5] This is a flowchart of a method for adjusting a first block copolymer mixture in a manufacturing facility to match a target metric, according to an embodiment of the present application. [Figure 6A] The present invention shows cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of this application, and shows the device after a second patterned photoresist layer has been coated with a second block copolymer mixture. [Figure 6B] The present invention shows cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of this application, and shows the device after a second patterned layer of the device element has been formed. [Figure 7]This is a flowchart of a self-organizing lithography method for forming a second pattern of a device element on top of a first pattern of a device element according to an embodiment of the present application. [Modes for carrying out the invention]

[0013] Corresponding numbers and symbols in different drawings generally refer to corresponding parts unless otherwise specified. The drawings are drawn to clearly illustrate relevant aspects of the embodiments and are not necessarily drawn to exact scale.

[0014] As described above, self-assembled lithography processes use block copolymers. These block copolymer mixtures are blended by suppliers, pre-packaged in individual bottles, and shipped to manufacturing facilities. A typical drawback of such self-assembled lithography processes is that suppliers of pre-packaged block copolymers generally do not know the specific process requirements for a given process flow and therefore cannot meet the specific compositional process window required by the manufacturing facility (e.g., meeting the target limit dimensions of features). Mass production of ICs may require multiple packages of the same block copolymer mixture. However, due to quality control issues, multiple bottles of the same block copolymer mixture, especially those from different batches, may have variations in molecular weight. Therefore, different packages of the same block copolymer mixture from a supplier may have different block copolymer compositions and, consequently, produce features with different limit dimensions and pitches. As an example, in some technologies, a 10% variation in the molecular weight of the block copolymer mixture between batches can result in a more than 6% difference in the limit dimensions of device elements. Such large deviations can cause process stoppages, potentially halting the production line until the feature size returns within the process window. Additionally, reordering pre-packaged block copolymer mixtures incurs costs due to the downtime of the manufacturing equipment until new bottles are received.

[0015] Another drawback of self-assembly lithography is the use of a different block copolymer mixture for each feature with different limiting dimensions. This is costly and time-consuming in conventional semiconductor manufacturing processes when multiple levels or features are manufactured using a self-assembly lithography process. This is because a different block copolymer composition is used for each feature that must be patterned with different feature sizes, and these different block copolymer compositions must be delivered to the manufacturing facility. This creates a significant bottleneck and increases the costs associated with managing multiple bottles of pre-packaged block copolymer mixtures. For example, using multiple pre-packaged bottles can be expensive due to the complexity associated with purchasing, scheduling, storage, and tooling requirements related to using different bottles.

[0016] Another drawback of self-assembled lithography is that pre-packaged block copolymer mixtures have a single film thickness, which can result in an uneven packing pattern across the substrate when the mixture is applied. In other words, each pre-packaged block copolymer mixture has a predetermined film thickness that it can achieve. Therefore, if a pre-packaged block copolymer mixture has a film thickness less than the target film thickness, the pattern of the device element will not be properly filled. Thus, even features with the same critical dimensions may not use the same bottle because they have different thicknesses in the base layer being patterned.

[0017] Embodiments of the present invention advantageously avoid the above-mentioned problems by forming a block copolymer mixture within manufacturing equipment, which enables consistency between batches, improved control over feature metrics such as critical dimension, pitch, microphase separation, surface roughness, and local uniformity of critical dimension, and control of pattern fill density to ensure uniform coating across a substrate. The present disclosure describes embodiments of a method for blending a block copolymer mixture in an in-line mixer within a processing tool, such as a coating tool in manufacturing equipment, that enables cost-effective manufacturing of integrated circuits by a self-assembled lithography process.

[0018] FIGS. 1 and 2 show a coating tool in manufacturing equipment according to an embodiment of the present invention. FIGS. 3 to 7 describe some exemplary embodiments of a method for forming a semiconductor device using the coating tool in more detail.

[0019] FIG. 1 illustrates a block copolymer coating tool according to an embodiment of the present application.

[0020] As shown in FIG. 1, the block copolymer coating tool comprises a first mixer device 100 and a processing tool 124 in which a semiconductor substrate 120 is processed. The processing tool 124 comprises a processing chamber 122 and a substrate holder 121 configured to support the semiconductor substrate 120 during processing. The blended block copolymer mixture is coated onto a main surface of the semiconductor substrate 120 by injecting the blended block copolymer mixture from the first mixer device 100 through a nozzle 118 of the processing tool 124. For example, the nozzle 118 may be a flat fan nozzle, a straight nozzle, or any other nozzle known to those skilled in the art.

[0021] The substrate holder 121 may be configured to rotate during the coating process. The processing chamber 122 has an outlet for excess fluid and, in certain embodiments, may be connected to a pressure system that maintains a target pressure within the processing chamber 122. The processing chamber 122 may also have a gas inlet, such as for pumping inert gas into the processing chamber 122 for specific applications.

[0022] Referring to Figure 1, the first mixer apparatus 100 comprises a first feed tank 102 and a second feed tank 104 coupled to a mixer 114 having a mixing chamber 112. Although only two feed sources are shown as being mixed, in various embodiments, three or more fluid feed sources may be mixed in the mixer 114. The first feed tank 102 and the second feed tank 104 each hold a first liquid and a second liquid, respectively. In various embodiments, the first feed tank 102 and the second feed tank 104 are made of ceramic, glass, stainless steel, or any other material, depending on the corrosive properties of the first and second liquids used.

[0023] In various embodiments, the first liquid contains a first block copolymer comprising a first homopolymer (-AA-...AA-) and a second homopolymer (-BB-...BB-). Thus, the first homopolymer is a polymer of the first monomer (A), and the second homopolymer is a polymer of the second monomer (B). When the first homopolymer is mixed with the second homopolymer (B), a block copolymer ((-AB-)-(-AB-)-···(-AB-)-(-AB-)) is formed. Examples of homopolymers include methyl methacrylate, styrene, dimethylsiloxane, ethylene oxide, butadiene, vinylpyridine, isoprene, and lactic acid.

[0024] In various embodiments, the first homopolymer has a first mole fraction in the first liquid. The second liquid contains a second block copolymer comprising the first homopolymer and the second homopolymer. The first homopolymer has a second mole fraction in the second liquid. Thus, both the first and second liquids contain the same polymer, but the first mole fraction is different from the second mole fraction.

[0025] In one or more embodiments, the first homopolymer is a polystyrene block containing repeating styrene units, and the second homopolymer is a polymethyl methacrylate block containing repeating methyl methacrylate units. Together with the second homopolymer, the first homopolymer forms a block copolymer, poly(styrene-β-methyl-methacrylate), i.e., repeating styrene-β-methyl-methacrylate units. Thus, both the first and second liquids contain poly(styrene-β-methyl methacrylate) in different molecular weights. In this specification, the first and second liquids are described for illustrative purposes only. Those skilled in the art may use other types of liquids in a similar manner.

[0026] In various embodiments, as long as the first mole fraction and the second mole fraction are different, the first mole fraction may be in the range of 10% to 90% in the first liquid, and the second mole fraction may be in the range of 10% to 90% in the second liquid.

[0027] In various embodiments, the first mixer device 100 may be driven by gravity with few intermediate components, or it may include a system consisting of pumps and valves for controlling the fluid flow. Thus, in a particular embodiment, the first mixer device 100 may include a first pump 106a, a second pump 106b, and a third pump 106c, a first shut-off valve 108a, a second shut-off valve 108b, and a third shut-off valve 108c, and a first flow meter 110a, a second flow meter 110b, and a third flow meter 110c.

[0028] Both the first supply tank 102 and the second supply tank 104 are connected to the first pump 106a and the second pump 106b. The first pump 106a and the second pump 106b are connected to the first shut-off valve 108a and the second shut-off valve 108b, respectively, and the first shut-off valve 108a and the second shut-off valve 108b are further connected to the mixer 114. The mixer 114 is connected to the processing tool 124 via an optional third pump 106c, which is connected to a third shut-off valve 108c and a third flow meter 110c.

[0029] As shown in Figure 1, the mixing chamber 112 may be located within the mixer 114. For example, the mixer 114 may be designed as described in Japanese Patent Application No. 62 / 839,917, filed on April 29, 2019 (the said patent application is incorporated herein by reference). In certain embodiments, the mixer 114 may be a planetary mixer, a stationary mixer, or any other mixer known to those skilled in the art that is capable of blending liquid mixtures.

[0030] The first mixer apparatus 100 may further include an electronic flow control system 115 for controlling, for example, various modes of fluid flow. The electronic flow control system 115 comprises a controller 116 and various memories, input / output devices, analog-to-digital converters, and other hardware and software known to those skilled in the art. For example, the controller may include a processor, a microprocessor, or any other type of controller known in the art. In addition, the electronic flow control system 115 may include sensors such as flow sensors and temperature sensors.

[0031] The electronic flow control system 115 is connected to the first pump 106a, the second pump 106b, the third pump 106c, the first shut-off valve 108a, the second shut-off valve 108b, the third shut-off valve 108c, the first flow meter 110a, the second flow meter 110b, the third flow meter 110c, the mixing chamber 112, and other components such as processing tools. More specifically, measurement data from the first flow meter 110a, the second flow meter 110b, and the third flow meter 110c may be received by the electronic flow control system 115, while control signals generated in the controller 116 may be transmitted to the first pump 106a, the second pump 106b, the third pump 106c, the first shut-off valve 108a, the second shut-off valve 108b, and the third shut-off valve 108c.

[0032] The electronic flow control system 115 may receive measurement or measurement data from the sensor 103 and process information including process recipes / metrics 105 such as a target process window. The sensor 103 may include, but is not limited to, various types of sensors, including optical sensors (such as cameras, lasers, light, reflectometers, and spectrometers), capacitance sensors, ultrasonic sensors, gas sensors, temperature sensors for monitoring liquid temperature, or other sensors that can monitor the blending process as well as the first liquid, the second liquid, and the blended first mixture. The electronic flow control system 115 may receive, but is not limited to, additional data entered by the user, including the first liquid in the first supply tank 102, the second liquid in the second supply tank 104, the first mixture, and target amounts for the required mixing time. In one exemplary embodiment, a mass spectrometer may be used to periodically determine the composition of the first and second liquids. In one exemplary embodiment, one or more optical sensors may be used to periodically determine the opacity of a first liquid and a second liquid, which may help determine the validity of their composition.

[0033] Based on data from various sensors 103 and process recipes / metrics 105, the controller 116 generates control signals to activate the first pump 106a and the second pump 106b and to deactivate the first shut-off valve 108a and the second shut-off valve 108b in order to supply the first and second liquids to the mixer 114. The first pump 106a, the second pump 106b, and the third pump 106c may include any centrifugal pumps or any positive displacement pumps capable of pumping liquid block copolymers, as known to those skilled in the art. The first shut-off valve 108a, the second shut-off valve 108b, and the third shut-off valve 108c may include motorized diaphragm valves, motorized angle seat valves, or any other valves known to those skilled in the art.

[0034] As the first and second liquids flow from the first and second supply tanks 102 and 104, the controller 116 continuously or periodically monitors the first flow meter 110a and the second flow meter 110b to track the amount of each liquid supplied to the mixer 114. For example, the first flow meter 110a, the second flow meter 110b, and the third flow meter 110c may include positive displacement flow meters that can directly provide the amount of liquid supplied without requiring additional calculations, or any other flow meters known to those skilled in the art.

[0035] When the controller 116 determines, based on data provided by the first flow meter 110a and various sensors 103, as well as the process recipe / metric 105, that the target amount of the first liquid has been supplied, the controller 116 generates a control signal to activate the first shut-off valve 108a and turn off the first pump 106a. Similarly, when the controller 116 determines, based on data provided by the second flow meter 110b and various sensors 103, as well as the process recipe / metric 105, that the target amount of the second liquid has been supplied, the controller 116 (CTLR) generates a control signal to activate the second shut-off valve 108b and turn off the second pump 106b.

[0036] After the first liquid and the second liquid are supplied to the mixer 114, the controller 116 generates a control signal to turn on the mixer 114 for a certain period of time based on the received data, and the mixer 114 blends the first liquid and the second liquid to form the first mixture.

[0037] In various embodiments, the mixer 114 may include a holding tank in which the blended liquid, i.e., the first mixture, is stored. However, in certain embodiments, the first mixture may be injected directly into the nozzle 118 of the processing tool without a separate holding tank. In certain embodiments, the nozzle 118 and the holding tank may be integrated, for example, in the plenum to the processing chamber 122.

[0038] After mixing, the controller 116 generates a control signal to inject the first mixture into the nozzle 118, activate an optional third pump 106c to coat the semiconductor substrate 120 with the first mixture in the processing chamber 122, and deactivate the third shut-off valve 108c.

[0039] In alternative embodiments, the second liquid may contain a solvent to produce a more uniform packing density across the semiconductor substrate using the method described above. In certain embodiments, the solvent may be added to improve metrics such as surface roughness and other features. In various embodiments, the solvent may be propylene glycol monomethyl ether acetate, toluene, or any other solvent known in the art to be mixed with block copolymer mixtures. In other embodiments, the solvent may be added from a third feed tank in addition to the second liquid containing the second block copolymer from a second feed tank 104.

[0040] In another alternative embodiment, the second liquid may essentially comprise the first homopolymer or the second homopolymer. In such embodiments, the first or second homopolymer may help fine-tune parameters such as the limit dimensions or pitch of the patterned features.

[0041] Figure 2 shows a block copolymer coating tool according to an embodiment of the present application.

[0042] As shown in Figure 2, the coating tool comprises a second mixer apparatus 200 and a processing tool 124 on which the semiconductor substrate 120 is processed. The second mixer apparatus 200 may include any number of feed containers in the range of 1, 2, 3, ... N into the mixer 114 to form a first mixture of block copolymer to be coated onto the semiconductor substrate 120 via a nozzle 118. The first feed container 1 is configured to hold a first liquid, the second feed container 2 is configured to hold a second liquid, and correspondingly the nth feed container N is configured to hold the nth liquid. For example, the feed containers may be made of ceramic, glass, stainless steel, or any other material known to those skilled in the art, based on the corrosive properties of the liquid.

[0043] In various embodiments, the first mixture comprises a first liquid held in a first supply container 1 and a second liquid held in a second supply container 2. The first liquid held in the first supply container 1 may be a first homopolymer and a second homopolymer, wherein the first homopolymer has a first mole fraction in the first liquid. The second liquid held in the second supply container 2 may be a first homopolymer and a second homopolymer, wherein the first homopolymer has a second mole fraction in the second liquid.

[0044] Liquid valves from multiple supply containers 1 to N can be opened electronically or by the user so that the multiple liquids are blended in the mixer 114 to form a first mixture, as described above with respect to Figure 1. As shown in Figure 1, the mixer 114 is connected to the processing tool 124 via a third pump 106c connected to a third shut-off valve 108c and a third flow meter 110c. The blended first mixture can be held in a holding tank in either the second mixer unit 200 or within the processing tool 124.

[0045] Once mixing is complete, the user injects the first mixture into the nozzle 118 and activates the third shut-off valve 108c and turns on the third pump 106c to coat the semiconductor substrate 120 with the first mixture in the processing chamber 122. As the first mixture exits the mixer 114, it flows through the third flow meter 110c, and the user continuously or periodically monitors the reading of the third flow meter 110c. Then, when the third flow meter 110c indicates that the desired amount of the first mixture has been supplied, the user stops the third pump 106c and activates the third shut-off valve 108c.

[0046] In various embodiments, the semiconductor substrate 120 may undergo a curing process in either the processing tool 124 or a different tool.

[0047] In other embodiments, the first mixture may include, in addition to the first and second liquids, a third liquid added from a third supply tank 3, which essentially contains the first homopolymer, essentially the second homopolymer, or a solvent. The first homopolymer, the second homopolymer, and the solvent may be similar to the solvent described above with respect to Figure 1, for example, without further discussion.

[0048] In other embodiments, the first mixture may include, in addition to the first and second liquids, a third liquid from a third supply tank 3 that essentially contains the first homopolymer, and a fourth liquid from a fourth supply tank 4 that essentially contains the second homopolymer.

[0049] As described above, the first mixture is blended using a self-assembly lithography (DSA) process to form device features for a semiconductor device.

[0050] Although not explicitly stated, this embodiment may also include an electronic control system coupled to various sensors and data sources for continuously monitoring and controlling the blending process, as described in relation to Figure 1 above and using the flowchart in Figure 5 below.

[0051] Figures 3A to 3E show cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of the present application, where Figure 3A shows the device after a patterned photoresist layer has been formed, Figure 3B shows the device after a mixture containing a blended block copolymer has been coated, Figure 3C shows the device after annealing, Figure 3D shows the device after selective removal of multiple regions, and Figure 3E shows the device after the first pattern of the device element has been formed.

[0052] Referring to Figure 3A, a first patterned photoresist layer 308 is formed on the semiconductor substrate 120. This processing step can be performed at any stage of device manufacturing, such as fin formation, gate formation, metal lines, contact plugs, and vias.

[0053] The semiconductor substrate 120 comprises a semiconductor body 320 supporting a first patterned layer 306 on which a first patterned photoresist layer 308 is formed. The semiconductor body 320 may be a bulk substrate such as a bulk silicon substrate, a silicon-on-insulator substrate, a silicon carbide substrate, a gallium arsenide substrate, or a hybrid substrate such as a gallium nitride and other heteroepitaxial substrate on silicon, or any other configuration and material known to those skilled in the art.

[0054] The first patterned layer 306 may be a layer that forms a device feature, or it may be an intervening layer used to later form a device feature. An example of such an intervening layer may be a hard mask layer used to subsequently pattern features onto a base layer. In various embodiments, the first patterned layer 306 may be an insulating layer, a conductive layer, or a semiconductor layer, depending on the features to be manufactured in this manufacturing stage.

[0055] As will be apparent to those skilled in the art, embodiments of the present invention intend the presence of other intervening layers. For example, an anti-reflective coating layer 307 may be formed before the formation of the first patterned photoresist layer 308. In one embodiment, the anti-reflective coating (ARC) film may include a silicon anti-reflective coating. In certain embodiments, the anti-reflective coating layer 307 may include an organic ARC layer, a metallic ARC layer, a metal oxide ARC layer, or a titanium nitride ARC layer. The anti-reflective coating layer 307 must also avoid interaction between the self-assembled lithography material being formed (i.e., a first or second homopolymer chain present in the first mixture deposited as described later) and the underlying first patterned layer 306.

[0056] In various embodiments, the first patterned photoresist layer 308 functions as a first DSA template, such that the underlying features are aligned to the first patterned photoresist layer 308. The first patterned photoresist layer 308 may include a positive, negative, or hybrid photoresist. In one embodiment, the first patterned photoresist layer 308 is formed by spin-coating a resist material onto the first patterned layer 306, baking the resist material to form a photoresist, exposing the photoresist using lithography, and developing the exposed photoresist.

[0057] The first patterned photoresist layer 308 has openings thus formed, with a specific width 302 and limiting dimension 304 defined in the lithography process. Conveniently, the dimensions of the specific width 302 and limiting dimension 304 are much larger than the features to be formed, and therefore a lower-resolution (and thus lower-cost) lithography process can be used to form these features.

[0058] Referring to Figure 3B, the first mixture 310, blended in mixer 114 within the same manufacturing facility, is coated into the first patterned photoresist layer 308 via the first mixer apparatus 100 or the second mixer apparatus 200, as described in more detail with respect to Figures 1 and 2. For clarity, the filling of adjacent openings in the first patterned photoresist layer 308 is not shown in Figures 3B to 3E. The first mixture 310 is coated on top of the first patterned photoresist layer 308, filling the openings between the patterns in the first patterned photoresist layer 308.

[0059] In one embodiment, the first mixture 310 has a first ratio of a first liquid containing the first block copolymer solution to a second liquid containing the second block copolymer solution. In another embodiment, the first mixture 310 is a mixture obtained by blending the first block copolymer solution with a solvent, as shown in Figure 1 or Figure 2. In yet another embodiment, the first mixture 310 is a mixture obtained by blending the first block copolymer solution with a homopolymer, as shown in Figure 1 or Figure 2. Thus, in various embodiments, the first mixture 310 is a blend of the first block copolymer solution with one or more of the second block copolymer solution, a solvent, or a homopolymer, as shown in Figure 1 or Figure 2.

[0060] Referring to Figure 3C, the semiconductor substrate 120 is annealed, thereby separating the first and second homopolymers present in the first mixture 310, and the respective homopolymers are arranged alternately to form a plurality of first regions 312 and a plurality of second regions 314 that align with the first patterned photoresist layer 308. The first plurality of regions 312 correspond to the first homopolymer, and the second plurality of regions 314 correspond to the second homopolymer. In various embodiments, the pitch between adjacent first plurality of regions 312 or between adjacent second plurality of regions 314 can vary from 10 nm to 100 nm, making it possible to form structures smaller than the resolution limit of the lithography process used to pattern the first patterned photoresist layer 308.

[0061] Annealing may include furnace annealing, lamp-based annealing, high-temperature short-time annealing, or any other annealing method known to those skilled in the art. In various embodiments, annealing may be carried out at 100°C to 700°C, and in one embodiment at 200°C to 400°C.

[0062] As will be apparent to those skilled in the art, the chemical composition of a block copolymer can be adjusted by varying the composition and mole fraction of the homopolymers to control the type of phase separation after annealing. During annealing, the homopolymers undergo microphase separation to form repeating patterns or periodic structures. The type of pattern may be a sphere of the first homopolymer embedded in the matrix of the second homopolymer (or vice versa), a hexagonal close-packed cylinder of the first homopolymer embedded in the matrix of the second homopolymer (or vice versa), a gyroid, or a lamellar arrangement of alternating first and second homopolymers. Of these possible structures, from a lithographic perspective, they can be formed from lamellae with alternating lines, while hexagonal close-packed cylinders can be used to form an array of contact holes. In the figures described herein, the first plurality of regions 312 and the second plurality of regions 314 are selected to be formed in a lamellar manner. However, in other embodiments, the first plurality of regions 312 and the second plurality of regions 314 may be selected to form a cylinder of the first plurality of regions 312 (or vice versa) within the second plurality of regions 314.

[0063] Furthermore, one of the homopolymers has a greater affinity for the first patterned photoresist layer 308 and is formed in contact with the sidewall of the first patterned photoresist layer 308. In this exemplary description, the first plurality of regions 312 are preferentially formed on the sidewall of the first patterned photoresist layer 308.

[0064] Referring to Figure 3D, either the first plurality of regions 312 or the second plurality of regions 314 is selectively removed to form a first etching mask on the first patterned photoresist layer 308. In various embodiments, the first plurality of regions 312 corresponding to the first homopolymer are removed, and the second plurality of regions 314 corresponding to the second homopolymer form the first etching mask on the first patterned photoresist layer 308. In alternative embodiments, the second plurality of regions 314 corresponding to the second homopolymer may be selectively removed, and the first plurality of regions 312 corresponding to the first homopolymer may form the first etching mask.

[0065] The removal of the first plurality of regions 312 or the second plurality of regions 314 may be carried out using either a wet or dry chemical reaction. For example, a dry oxygen plasma may be used to remove polymethyl methacrylate. If the selectivity of this etching process is poor, when the first plurality of regions 312 are removed, a portion of the second plurality of regions 314 may also be removed. In some embodiments, this may be used to the advantage of reducing the critical dimensions of the remaining second plurality of regions 314. However, in certain embodiments, lateral etching of the second plurality of regions 314 may be undesirable because it may be difficult to control the perpendicularity of the sidewall profile required to pattern the layer 306 that will be patterned in the next step.

[0066] Referring to Figure 3E, a first etching mask is used to form a first pattern of a device element 316 having a first limiting dimension 318 and a first pitch 321 on the patterned layer 306. In this case, the first patterned photoresist layer 308 is removed before etching. Naturally, if multiple trenches are formed on the patterned layer 306, the first patterned photoresist layer 308 may be removed after patterning the patterned layer 306. As those skilled in the art will see, an anisotropic reactive ion etching process can be used to pattern the patterned layer 306. After patterning the patterned layer 306, any remaining second multiple regions 314 are also removed.

[0067] As described above, the first limit dimension 318 and the first pitch 321 formed are based on a first ratio of liquids blended into the first mixture, for example, the ratio of the first block copolymer to the second block copolymer, or the ratio of the first block copolymer to the homopolymer. The first patterned photoresist layer 308 and the etching mask formed by the second set of elements are removed.

[0068] Figure 4 is a flowchart of a first self-assembly lithography method for forming a first pattern of a device element according to an embodiment of the present disclosure.

[0069] In block 402, a first patterned photoresist layer 308 is formed on a first patterned layer 306 formed on a semiconductor substrate 120. This first patterned photoresist layer 308 can be formed as described and illustrated with reference to Figure 3A.

[0070] Next, as shown in block 404 and described with respect to Figure 3B, the first patterned photoresist layer 308 is coated with the first mixture 310. The formation of the first mixture 310 is described with reference to Figures 1 and 2. In various embodiments, as discussed above, the first mixture 310 is a blend of two or more combinations of the first block copolymer, the second block copolymer, a solvent, and a homopolymer, using the first mixer apparatus 100 or the second mixer apparatus 200. Conveniently, the blending of the first mixture 310 and the coating of the first mixture 310 onto the semiconductor substrate 120 are carried out in the same manufacturing equipment. Furthermore, this blending may be carried out at a close time interval from the coating process to avoid chemical degradation due to long-term storage.

[0071] Next, referring to block 406, and as also described with respect to Figure 3C, the substrate is annealed to form a first plurality of regions 312 and a second plurality of regions 314.

[0072] Next, as shown in block 408 and described with respect to Figure 3D, the first set of regions 312 are selectively removed to form a first etching mask.

[0073] Next, as shown in block 410 and described with respect to Figure 3E, after removing the remaining first patterned photoresist layer, the first pattern of the device element 316 is formed using the first etching mask.

[0074] As mentioned above, the advantage of blending block copolymers within the manufacturing facility is that if the metric of the initially formed pattern does not match the target metric, the blended block copolymer mixture can be adjusted within the manufacturing facility instead of ordering a new mixture from the supplier.

[0075] Figure 5 is a flowchart of a method for adjusting the first block copolymer mixture within the manufacturing facility to match the target metric.

[0076] As shown in block 502, block copolymer (BCP) mixtures, such as the first mixture 310, are blended in the manufacturing facility using the first mixer 100 or the second mixer 200, as described above using Figures 1 and 2. In various embodiments, as discussed above, the first mixture 310 is obtained by blending two or more combinations of the first block copolymer, the second block copolymer, a solvent, and a homopolymer using the first mixer 100 or the second mixer 200.

[0077] During manufacturing or process progression, it is conceivable that pattern features or blended mixtures may not be within the desired target window. This can ultimately lead to a loss of product yield, and therefore embodiments of this disclosure assume process control provided to an electronic flow control system 115, as described in Figure 1, where metrics measured in blocks 503 and 506 are actively or periodically monitored.

[0078] Next, as shown in block 503, the blended block copolymer mixture, the first liquid, or the second liquid can be analyzed using various measuring tools, including sensors such as the sensor 103 described with respect to Figure 1. Alternatively or additionally, for the above measurements in block 503, then, as shown in block 504, the semiconductor substrate 120 is coated with the first mixture 310 and the pattern of the device element 316 is formed on the semiconductor substrate 120 as described above with reference to Figures 3A-3E and Figure 4. In this case, the metric of the pattern of the device element 316 is measured. In a further embodiment, the patterns of a second plurality of regions 314 are measured before forming the device element 316. Therefore, in various embodiments, the metrics measured may be the limit dimensions of the device element 316 / second multiple regions 314, the width of the device element 316 / second multiple regions 314 (dimension orthogonal to the limit dimensions), the height or depth of the device element 316 / second multiple regions 314, the distance between adjacent elements, i.e., the pitch of the device element 316 / second multiple regions 314, the surface roughness of the device element 316 / second multiple regions 314, the local uniformity of the limit dimensions of the device element 316 / second multiple regions 314, the line width variation of the device element 316 / second multiple regions 314, the sidewall angle of the device element 316 / second multiple regions 314, the microphase structure, or other metrics. These measurements can be performed using inline tools such as optical measuring tools, such as scattermeters, which use non-destructive testing, or other measuring tools, such as optical microscopes or electron microscopes, which may use destructive testing.

[0079] The measured metric is compared to a target metric or target process window obtained from process recipe / metric 105, as described in Figure 5, for example. This can be done, for example, in the electronically controlled system described in Figure 1. If the measured metric is the same as the target metric or within the process window, no changes are made to the blended liquid or to the process at this point. If the measured metric is different from the target metric or outside the process window, the process proceeds to step 510, where a new or modified recipe for the block copolymer mixture is generated according to Figure 1 or Figure 2. The new mixture may have any of the process parameters, such as the flow rate and / or pressure of the first or second liquid, temperature, and other parameters.

[0080] In various embodiments, if the target metric is a limit dimension or pitch, and the measured limit dimension or pitch does not match the target metric, the first mixture may be further blended with a third liquid, which essentially consists of a first homopolymer or a second homopolymer, to form a second mixture adjusted to a new limit dimension or pitch.

[0081] In an alternative embodiment, if the target metric is a limit dimension or pitch, and the measured limit dimension or pitch does not match the target metric, the first mixture may be further blended with a third liquid, which is essentially composed of the first homopolymer, and a fourth liquid, which is essentially composed of the second homopolymer, to form a second mixture adjusted to the new limit dimension or pitch.

[0082] In an alternative embodiment, if the target metric is surface roughness and the measured surface roughness does not match the target surface roughness, the first mixture may be further blended with a third liquid containing a solvent to form a new mixture with an improved film thickness. For example, the solvent may include propylene glycol monomethyl ether acetate, toluene, or any other solvent known in the art to alter the film thickness of block copolymers.

[0083] In alternative embodiments, the microphase of the first mixture may be unsuitable. For example, the microphase may be hexagonal rather than lamellar. In such cases, the first mixture may be further blended with a third liquid, which is essentially composed of the first or second homopolymer, to change the phase of the blended mixture from hexagonal to lamellar, or vice versa. In various embodiments, as described above, the phase can be changed between close-packed cylinders, hexagonal lattices, and lamellae by changing the composition of the homopolymers in the block copolymer.

[0084] The processes in blocks 502 through 508 are repeated with a new mixture being blended or modified according to a new process recipe.

[0085] As described above, another advantage of the disclosed invention is that by blending multiple block copolymer mixtures corresponding to each consecutive layer of the device element in the manufacturing equipment, multiple layers of IC device elements with different limiting dimensions, pitch, and / or shapes can be fabricated on the same semiconductor substrate.

[0086] Figures 6A and 6B show cross-sectional views of a semiconductor device at various stages of manufacturing according to embodiments of the present application, where Figure 6A shows the device after coating with a second patterned photoresist layer using a second block copolymer mixture, and Figure 6B shows the device after forming the second patterned layer of the device element. Figure 7 is a flowchart of a second DSA method used to form the second layer of the device element for the manufacturing process shown in Figures 6A and 6B.

[0087] In this embodiment, blended mixtures of different compositions are formed using the same feed tank previously used to pattern device elements in different process steps. Conveniently, different limit dimensions can be achieved with the same mixing apparatus without the need to change the feed bottle.

[0088] Therefore, this embodiment continues from Figure 3E. Next, referring to Figure 6A and block 702, the interlayer dielectric layer 606 is formed on the device element 316 formed, for example, in Figure 3E. The interlayer dielectric layer 606 may include multiple layers and may include glass such as SiO2, SION, Si3N4, borosilicate glass, organosilicate glass, low dielectric constant materials, or any other interlayer dielectric known to those skilled in the art.

[0089] Next, a second patterned layer 608 is formed on top of the interlayer dielectric layer 606 (block 704), which may include a dielectric layer, a conductive layer, or a semiconductor layer, depending on the features formed.

[0090] Next, a second patterned photoresist layer is formed on the second patterned layer 608 (block 706). As shown in Figure 6A, the second patterned photoresist layer 610 is formed on the second patterned layer 608. The second patterned photoresist layer 610 may contain the same material as the first patterned photoresist layer 308 shown in Figure 3A and may be formed in the same manner. The second patterned photoresist layer 610 is patterned with a second specific pitch 602 and a second specific limiting dimension 604. The second patterned photoresist layer 610 functions as a second DSA template.

[0091] The second patterned photoresist layer 610 is coated with a second mixture (block 708). The second mixture has a different composition from the first mixture used in Figure 3B. In one embodiment, the second mixture has a second ratio of a first liquid containing the first block copolymer liquid to a second liquid containing the second block copolymer liquid. The second ratio is selected to achieve a second limit dimension of the target of the feature to be patterned, and the first ratio is selected to achieve a first limit dimension of a different target of the feature to be patterned. Similar to the first mixture, in various embodiments, the second mixture is a blend of the first block copolymer liquid with one or more of the second block copolymer liquid, a solvent, or a homopolymer, as shown in Figure 1 or Figure 2. Similar to the first mixture, the second mixture is then coated onto the second patterned photoresist layer 610 via the first mixer apparatus 100 or the second mixer apparatus.

[0092] Referring to block 710, the second etching mask 612 is formed by annealing the substrate to induce microphase separation (for example, as in Figure 3D), and then removing one of the phase regions.

[0093] Referring to Figure 6B, a second pattern of the device element 616 having a second limit dimension 618 and a second pitch 620 is formed using the second etching mask 612 (block 712). The formed second limit dimension 618 and second pitch 620 are based on a second ratio of the first liquid to the second liquid in the second mixture. The second patterned photoresist layer 610 and the second etching mask 612 are removed (block 714).

[0094] In various embodiments, a first DSA process is used to form a first pattern of gate lines, and a second DSA process is used to form a second pattern of metal lines on top of the gate lines. In alternative embodiments, a first DSA process is used to form a first pattern of gate lines, and a second DSA process is used to form a second pattern of contact holes within the gate lines.

[0095] Conveniently, as discussed in the embodiments described with Figures 3A–3E and 6A–6B, two different patterns with different limit dimensions and pitches can be formed using a common feed tank. This advantage is readily scalable as more levels use the self-assembling lithography process, as additional patterns with other limit dimensions can be produced using the same number of feed tanks / liquids.

[0096] Examples of embodiments are described below.

[0097] Example 1. A method for forming a device comprises blending a first liquid containing a first block copolymer with a second liquid containing a second block copolymer in a mixer in a manufacturing facility to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer, the first homopolymer having a first mole fraction in the first liquid, the second block copolymer comprises a first homopolymer and a second homopolymer, the first homopolymer having a second mole fraction in the second liquid, the first mole fraction being different from the second mole fraction, placing a substrate on a substrate holder in a processing chamber in a manufacturing facility, and coating the substrate with the first mixture in the processing chamber.

[0098] Example 2. The method according to Example 1, further comprising forming a patterned photoresist layer on a patterned layer placed on a substrate, wherein coating the substrate with a first mixture includes coating the patterned photoresist layer with the first mixture; annealing to form a first plurality of regions comprising a first homopolymer and a second plurality of regions comprising a second homopolymer; selectively removing the first plurality of regions to form an etching mask aligned with the patterned photoresist layer, wherein the etching mask comprises the second plurality of regions; and forming a pattern on the patterned layer using the etching mask.

[0099] Example 3. The method according to Example 1 or 2, further comprising removing the patterned photoresist layer and removing a second plurality of regions after forming the pattern.

[0100] Example 4. The method according to any one of Examples 1 to 3, further comprising forming a first pattern from a coating of a first mixture, measuring a first limit dimension of the features of the first pattern, and, in response to the determination that the first limit dimension is different from the target limit dimension, blending a first liquid with a second liquid in a mixer to form a second mixture, wherein the first mixture contains a first ratio of the first block copolymer to the second block copolymer, and the second mixture contains a second ratio of the first block copolymer to the second block copolymer, the second ratio being different from the first ratio, coating a further substrate with the second mixture, and forming a second pattern from the coating of the second mixture, wherein the second limit dimension of the features of the second pattern matches the target limit dimension.

[0101] Example 5. The method according to any one of Examples 1 to 4, further comprising blending a first liquid with a second liquid in a mixer to form a second mixture, wherein the first mixture contains a first ratio of the first block copolymer to the second block copolymer, and the second mixture contains a second ratio of the first block copolymer to the second block copolymer, the second ratio being different from the first ratio, and coating a substrate with the second mixture.

[0102] Example 6. The method according to any one of Examples 1 to 5, further comprising forming a first pattern by using a first self-assembling lithography process based on a first mixture, and forming a second pattern by using a second self-assembling lithography process based on a second mixture, wherein the first limit dimensions of the features of the first pattern are different from the second limit dimensions of the features of the second pattern.

[0103] Example 7. A first self-assembly lithography process comprising forming a first patterned photoresist layer on a first patterned layer placed on a substrate, wherein coating the substrate with a first mixture includes coating the first patterned photoresist layer with the first mixture; annealing to form a first plurality of regions comprising a first homopolymer and a second plurality of regions comprising a second homopolymer; selectively removing the first plurality of regions to form a first etching mask aligned with the first patterned photoresist layer, wherein the first etching mask includes a second plurality of regions; and forming a pattern on the first patterned layer using the first etching mask, wherein a second self-assembly lithography process is performed. The method according to any one of Examples 1 to 6, wherein the roughing process comprises forming a second patterned photoresist layer on a second patterned layer placed on a substrate, and coating the substrate with a second mixture comprises coating the second patterned photoresist layer with the second mixture; annealing to form a third plurality of regions comprising a first homopolymer and a fourth plurality of regions comprising a second homopolymer; selectively removing the third plurality of regions to form a second etching mask aligned with the second patterned photoresist layer, wherein the second etching mask comprises a fourth plurality of regions; and forming a second pattern on the second patterned layer using the second etching mask.

[0104] Example 8. The method according to any one of Examples 1 to 7, wherein the first pattern is a pattern for the gate line and the second pattern is a pattern for the metal line above the gate line.

[0105] Example 9. The method according to any one of Examples 1 to 8, wherein the first pattern is a pattern for the gate line and the second pattern is a pattern for forming contact holes in the gate line.

[0106] Example 10. The method according to any one of Examples 1 to 9, wherein coating a substrate comprises rotating a substrate holder together with the substrate and injecting a first mixture through a nozzle connected to a mixer, the nozzle being directed toward the substrate to coat the substrate with the first mixture.

[0107] Example 11. The method according to any one of Examples 1 to 10, further comprising adding a third liquid essentially containing the first homopolymer during blending to form the first mixture.

[0108] Example 12. The method according to any one of Examples 1 to 11, further comprising adding a fourth liquid, which essentially contains a second homopolymer, during blending to form a first mixture.

[0109] Example 13. A method for forming a device comprises blending a first block copolymer and a solvent in a mixer in a manufacturing facility to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer; placing a substrate on a substrate holder in a processing chamber in a manufacturing facility; and coating the substrate with the first mixture in the processing chamber.

[0110] Example 14. The method according to Example 13, further comprising forming a first pattern from a coating of a first mixture, measuring a first metric of the features of the first pattern, and, in response to determining that the first metric is different from a target metric, blending a first block copolymer with a solvent in a mixer to form a second mixture, wherein the first mixture contains a first ratio of the first block copolymer to the solvent, and the second mixture contains a second ratio of the first block copolymer to the solvent, the second ratio being different from the first ratio, coating a further substrate with the second mixture, and forming a second pattern from the coating of the second mixture, wherein the second metric of the features of the second pattern matches the target metric.

[0111] Example 15. The method according to Example 13 or 14, wherein the first metric, the second metric, and the target metric are surface roughness measurements.

[0112] Example 16. The method according to any one of Examples 13 to 15, further comprising: forming a patterned photoresist layer on a patterned layer placed on a substrate, wherein coating the substrate with a first mixture includes supplying a solvent to the first mixture while coating the patterned photoresist layer with the first mixture; annealing to form a first plurality of regions comprising a first homopolymer and a second plurality of regions comprising a second homopolymer; selectively removing the first plurality of regions to form an etching mask aligned with the patterned photoresist layer, wherein the etching mask includes a second plurality of regions; and forming a pattern on the patterned layer using the etching mask.

[0113] Example 17. A method for forming a device comprises blending a first liquid containing a first block copolymer with a second liquid essentially containing a first homopolymer in a mixer in a manufacturing facility to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer; placing a substrate on a substrate holder in a processing chamber in a manufacturing facility; and coating the substrate with the first mixture in the processing chamber.

[0114] Example 18. The method of Example 17, further comprising adding a third liquid essentially containing the first homopolymer during blending to form the first mixture.

[0115] Example 19. The method according to Example 17 or 18, further comprising adding a third liquid essentially containing a solvent during blending to form a first mixture.

[0116] Example 20. The method according to any one of Examples 17 to 19, further comprising forming a first pattern from a coating of a first mixture, measuring a first limit dimension of the features of the first pattern, and, in response to the determination that the first limit dimension is different from the target limit dimension, blending a first liquid with a second liquid in a mixer to form a second mixture, wherein the first mixture contains a first ratio of the first liquid to the second liquid, and the second mixture contains a second ratio of the first liquid to the second liquid, the second ratio being different from the first ratio, coating a further substrate with the second mixture, and forming a second pattern from the coating of the second mixture, wherein the second limit dimension of the features of the second pattern matches the target limit dimension.

[0117] While the present invention has been described with reference to exemplary embodiments, this specification is not intended to be constrained. Those skilled in the art will be able to see by reference to this specification various modifications and combinations of those exemplary embodiments, as well as other embodiments of the present invention. Accordingly, the appended claims are intended to encompass all such modifications or embodiments.

Claims

1. In a mixer within a manufacturing facility, a first liquid containing a first block copolymer is blended with a second liquid containing a second block copolymer to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer, the first homopolymer has a first mole fraction in the first liquid, the second block copolymer comprises the first homopolymer and the second homopolymer, the first homopolymer has a second mole fraction in the second liquid, and the first mole fraction is different from the second mole fraction. Placing the substrate on the substrate holder in the processing chamber within the manufacturing equipment, Coating the substrate with the first mixture in the processing chamber, Forming a first pattern from the coating of the first mixture, Measuring the first limit dimension of the feature of the first pattern, In response to the determination that the first limit dimension differs from the target limit dimension, the mixer blends the first liquid with the second liquid to form a second mixture, wherein the first mixture contains a first ratio of the first block copolymer to the second block copolymer, and the second mixture contains a second ratio of the first block copolymer to the second block copolymer, and the second ratio is different from the first ratio. Further coating of the substrate with the second mixture, Forming a second pattern from the coating of the second mixture, wherein the second limit dimensions of the features of the second pattern coincide with the limit dimensions of the target. Includes, A method for forming a device, wherein blending in the mixer is performed by independently controlling the supply flow rates of the first liquid and the second liquid.

2. The process involves forming a patterned photoresist layer on a patterned layer disposed on the substrate, and coating the substrate with the first mixture includes coating the patterned photoresist layer with the first mixture. Annealing to form a first plurality of regions containing the first homopolymer and a second plurality of regions containing the second homopolymer, The method involves selectively removing the first plurality of regions to form an etching mask aligned with the patterned photoresist layer, wherein the etching mask includes the second plurality of regions. A pattern is formed on the patterned layer using the etching mask. The method according to claim 1, further comprising:

3. The method of claim 2, further comprising removing the patterned photoresist layer and removing the second plurality of regions after forming the pattern.

4. In the mixer, the first liquid is blended with the second liquid to form a second mixture, wherein the first mixture contains a first ratio of the first block copolymer to the second block copolymer, and the second mixture contains a second ratio of the first block copolymer to the second block copolymer, and the second ratio is different from the first ratio. Coating the substrate with the second mixture and The method according to claim 1, further comprising:

5. A first pattern is formed by using a first self-assembly lithography process based on the first mixture, A second pattern is formed by using a second self-assembling lithography process based on the second mixture, wherein the first limit dimensions of the features of the first pattern are different from the second limit dimensions of the features of the second pattern. The method according to claim 4, further comprising:

6. The first self-organizing lithography process described above, The process involves forming a first patterned photoresist layer on a first patterned layer disposed on the substrate, wherein coating the substrate with the first mixture includes coating the first patterned photoresist layer with the first mixture. Annealing to form a first plurality of regions containing the first homopolymer and a second plurality of regions containing the second homopolymer, The method involves selectively removing the first plurality of regions to form a first etching mask aligned with the first patterned photoresist layer, wherein the first etching mask includes the second plurality of regions. Forming the first pattern on the first patterned layer using the first etching mask and Includes, The second self-organizing lithography process described above is The process involves forming a second patterned photoresist layer on a second patterned layer disposed on the substrate, wherein coating the substrate with the second mixture includes coating the second patterned photoresist layer with the second mixture. Annealing to form a third plurality of regions containing the first homopolymer and a fourth plurality of regions containing the second homopolymer, The third plurality of regions is selectively removed to form a second etching mask aligned with the second patterned photoresist layer, wherein the second etching mask includes the fourth plurality of regions. Using the second etching mask, a second pattern is formed on the second patterned layer. The method according to claim 5, including the method described in claim 5.

7. The method according to claim 5, wherein the first pattern is a pattern for a gate line, and the second pattern is a pattern for a metal line above the gate line.

8. The method according to claim 5, wherein the first pattern is a pattern for a gate line, and the second pattern is a pattern for forming a contact hole in the gate line.

9. Coating the aforementioned substrate Rotating the substrate holder together with the substrate, Injecting the first mixture through a nozzle connected to the mixer, wherein the nozzle is directed toward the substrate to coat the substrate with the first mixture. The method according to claim 1, including the method described in claim 1.

10. The method according to claim 1, further comprising, during the blending, adding a third liquid essentially comprising the first homopolymer to form the first mixture.

11. The method according to claim 10, further comprising, during the blending, adding a fourth liquid essentially comprising the second homopolymer to form the first mixture.

12. A method for forming a device, wherein the method is The process involves blending a first block copolymer with a solvent in a mixer within a manufacturing facility to form a first mixture, wherein the first block copolymer comprises a first homopolymer and a second homopolymer. Placing the substrate on the substrate holder in the processing chamber within the manufacturing equipment, Coating the substrate with the first mixture in the processing chamber, Forming a first pattern from the coating of the first mixture, Measuring the first metric of the features of the first pattern, In response to the determination that the first metric is different from the target metric, the mixer blends the first block copolymer with the solvent to form a second mixture, wherein the first mixture contains a first ratio of the first block copolymer to the solvent, and the second mixture contains a second ratio of the first block copolymer to the solvent, and the second ratio is different from the first ratio. Further coating of the substrate with the second mixture, Forming a second pattern from the coating of the second mixture, wherein the second metric of the features of the second pattern matches the target metric. Includes, A method for forming a device, wherein blending in the mixer is performed by independently controlling the supply flow rates of the first block copolymer and the solvent.

13. The method according to claim 12, wherein the first metric, the second metric, and the target metric are measured values ​​of surface roughness.

14. The process involves forming a patterned photoresist layer on a patterned layer disposed on the substrate, wherein coating the substrate with the first mixture includes coating the patterned photoresist layer with the first mixture while supplying a solvent to the first mixture. Annealing to form a first plurality of regions containing the first homopolymer and a second plurality of regions containing the second homopolymer, The method involves selectively removing the first plurality of regions to form an etching mask aligned with the patterned photoresist layer, wherein the etching mask includes the second plurality of regions. A pattern is formed on the patterned layer using the etching mask. The method according to claim 12, further comprising:

15. In a mixer within a manufacturing facility, a first liquid containing a first block copolymer and a second liquid essentially containing a first homopolymer are blended to form a first mixture, wherein the first block copolymer contains the first homopolymer and the second homopolymer. Placing the substrate on the substrate holder in the processing chamber within the manufacturing equipment, Coating the substrate with the first mixture in the processing chamber, Forming a first pattern from the coating of the first mixture, Measuring the first limit dimension of the feature of the first pattern, In response to the determination that the first limit dimension differs from the target limit dimension, the mixer blends the first liquid with the second liquid to form a second mixture, wherein the first mixture contains a first ratio of the first liquid to the second liquid, and the second mixture contains a second ratio of the first liquid to the second liquid, and the second ratio is different from the first ratio. Further coating of the substrate with the second mixture, Forming a second pattern from the coating of the second mixture, wherein the second limit dimensions of the features of the second pattern coincide with the limit dimensions of the target. Includes, A method for forming a device, wherein blending in the mixer is performed by independently controlling the supply flow rates of the first liquid and the second liquid.

16. The method according to claim 15, further comprising, during the blending, adding a third liquid essentially comprising the first homopolymer to form the first mixture.

17. The method according to claim 15, further comprising, during the blending, adding a third liquid which essentially contains a solvent to form the first mixture.

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