electronic machinery

Abstract

The present invention provides electronic equipment which can be operated contactlessly. This electronic equipment includes a display unit, a processing unit, and a storage unit. The display unit includes a display apparatus including a light-emitting device and a light-receiving device. The display unit has the function of displaying an image by using the light-emitting device, and the function of capturing an image by using the light-receiving device. The storage unit includes a machine learning model which uses a neural network. The processing unit has the function of using the machine learning model and inferring, from image-capturing data obtained by the image capturing of the display unit, positional information on an object not in contact with the electronic equipment.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, a display module, and electronic equipment.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, information terminal devices such as smartphones, tablet computers, and notebook PCs (personal computers) have become widespread. These devices often contain personal information, and various authentication technologies have been developed to prevent unauthorized use. There is a demand for information terminal devices with various functions, such as image display capabilities, touch sensor capabilities, and fingerprint imaging capabilities for authentication.

[0004] For example, Patent Document 1 discloses an electronic device equipped with a fingerprint sensor in the push-button switch section.

[0005] As a display device, for example, a light-emitting device (also called a light-emitting element) has been developed. Light-emitting devices that utilize the electroluminescence (EL) phenomenon (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0056493 Summary of the Invention Problem to be Solved by the Invention

[0007] From the viewpoints of infectious disease control, hygiene, and the like, there is a demand for information terminal devices that can be operated in a non-contact manner.

[0008] One aspect of the present invention has, as one of its objects, to provide an electronic device operable in a non-contact manner.

[0009] One aspect of the present invention has, as one of its objects, to provide a high-definition display device having a photodetection function. One aspect of the present invention has, as one of its objects, to provide a high-resolution display device having a photodetection function. One aspect of the present invention has, as one of its objects, to provide a highly reliable display device having a photodetection function.

[0010] Note that the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily need to solve all of these problems. Problems other than these can be extracted from the description of the specification, the drawings, and the claims. Means for Solving the Problem

[0011] One aspect of the present invention is an electronic device including a display portion, a processing portion, and a storage portion, wherein the display portion includes a display device including a light-emitting device and a light-receiving device. The display portion has a function of displaying an image using the light-emitting device and a function of capturing an image using the light-receiving device. The storage portion includes a machine learning model using a neural network. The processing portion has a function of inferring, using the machine learning model, position information of an object that is not in contact with the electronic device from image capture data captured by the display portion.

[0012] Alternatively, one aspect of the present invention is an electronic device having a display unit, a processing unit, and a storage unit, wherein the display unit has a display device having a first pixel. The first pixel has a first light-emitting device, a first light-receiving device, and a second light-receiving device, wherein the wavelength range of light detected by the first light-receiving device includes the maximum peak wavelength of the emission spectrum of the first light-emitting device, and the second light-receiving device has the function of detecting infrared light. The display unit has the function of displaying an image using the first light-emitting device and the function of capturing an image using one or both of the first and second light-receiving devices. The storage unit has a machine learning model using a neural network. The processing unit has the function of inferring the position information of an object not in contact with the electronic device from the image data captured by the display unit using the machine learning model.

[0013] Alternatively, one aspect of the present invention is an electronic device having a display unit, a processing unit, and a storage unit, wherein the display unit has a display device having a first pixel. The first pixel has a first sub-pixel, a second sub-pixel, a third sub-pixel, a fourth sub-pixel, and a fifth sub-pixel. The first sub-pixel has a first light-emitting device and has the function of emitting red light. The second sub-pixel has a second light-emitting device and has the function of emitting green light. The third sub-pixel has a third light-emitting device and has the function of emitting blue light. The fourth sub-pixel has a first light-receiving device, and the wavelength range of light detected by the first light-receiving device includes the maximum peak wavelength of the emission spectrum of at least one of the first light-emitting device, the second light-emitting device, and the third light-emitting device. The fifth sub-pixel has a second light-receiving device and has the function of detecting infrared light. The display unit has the function of displaying an image using the first to third subpixels, and the function of capturing an image using either or both of the first and second light-receiving devices. The storage unit has a machine learning model using a neural network. The processing unit has the function of inferring the position information of an object that is not in contact with the electronic device from the image data captured by the display unit using the machine learning model.

[0014] Preferably, the area of ​​the light-receiving region of the first light-receiving device is smaller than the area of ​​the light-receiving region of the second light-receiving device.

[0015] The display device preferably has a first light-emitting device, a first light-receiving device, and a second pixel having a sensor device. The electronic device preferably has the function of measuring at least one of the following using the sensor device: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, magnetism, temperature, chemical substances, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, physical condition, pulse rate, body temperature, and blood oxygen concentration.

[0016] Alternatively, the display device preferably has a first light-emitting device, a fourth light-emitting device, and a second pixel having a first light-receiving device. The fourth light-emitting device preferably has the function of emitting infrared light.

[0017] Alternatively, an electronic device according to one aspect of the present invention may have a fourth light-emitting device having the function of emitting infrared light located outside the display device. The fourth light-emitting device may emit light outside the electronic device via the display device. [Effects of the Invention]

[0018] According to one aspect of the present invention, a non-contact operable display device can be provided.

[0019] According to one aspect of the present invention, a high-resolution display device having a light detection function can be provided. According to one aspect of the present invention, a high-resolution display device having a light detection function can be provided. According to one aspect of the present invention, a highly reliable display device having a light detection function can be provided.

[0020] Furthermore, the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description, drawings, and claims. [Brief explanation of the drawing]

[0021] Figure 1A shows an example of an electronic device. Figure 1B shows an example of a process performed by an electronic device. Figures 2A to 2G show examples of pixels in a display device. Figures 3A and 3B show examples of pixels in a display device. Figures 3C and 3D are cross-sectional views showing examples of electronic devices. Figures 4A and 4B are cross-sectional views showing an example of an electronic device. Figures 5A to 5D show examples of pixels in a display device. Figure 5E is a cross-sectional view showing an example of an electronic device. Figure 6 shows an example of a display device layout. Figure 7 shows an example of a display device layout. Figure 8 shows an example of a display device layout. Figure 9 shows an example of a display device layout. Figure 10 shows an example of a pixel circuit. Figure 11A is a top view showing an example of a display device. Figure 11B is a cross-sectional view showing an example of a display device. Figures 12A to 12C are cross-sectional views showing an example of a display device. Figures 13A and 13B are cross-sectional views showing an example of a display device. Figures 14A to 14C are cross-sectional views showing an example of a display device. Figures 15A to 15F are cross-sectional views showing an example of a display device. Figure 16 is a perspective view showing an example of a display device. Figure 17A is a cross-sectional view showing an example of a display device. Figures 17B and 17C are cross-sectional views showing an example of a transistor. Figures 18A to 18D are cross-sectional views showing an example of a display device. Figures 19A to 19F show examples of the configuration of a light-emitting device. Figures 20A and 20B show examples of electronic devices. Figures 21A to 21D show examples of electronic devices. Figures 22A to 22F show examples of electronic devices. Figure 23A is a diagram illustrating the evaluation method of the embodiment. Figures 23B to 23D are photographs captured by the display device. [Modes for carrying out the invention]

[0022] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0023] In the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used, and reference numerals may not be assigned.

[0024] Furthermore, the position, size, and scope of each component shown in the drawings may not represent the actual position, size, and scope for the sake of ease of understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0025] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0026] (Embodiment 1) In this embodiment, an electronic device and a display device according to one aspect of the present invention will be described with reference to Figures 1 to 10.

[0027] One aspect of the present invention is an electronic device having a display unit, a processing unit, and a storage unit. The display unit has a display device having a light-emitting device and a light-receiving device. The display unit has a function to display an image using the light-emitting device and a function to capture an image using the light-receiving device. The storage unit has a machine learning model using a neural network. The processing unit has a function to infer the position information of an object that is not in contact with the electronic device from the image data captured by the display unit using the machine learning model.

[0028] By using machine learning models, the accuracy of inference can be improved. Furthermore, by having an imaging function in the display device, it is possible to achieve multi-functionality in electronic devices without increasing the number of components.

[0029] In one aspect of the present invention, it is preferable that the electronic device uses artificial intelligence (AI) for at least some of its processing.

[0030] In one aspect of the present invention, it is particularly preferable to use an artificial neural network (ANN, also simply referred to as a neural network). The neural network is implemented by a circuit (hardware) or a program (software).

[0031] In this specification, the term "neural network" refers to any model that mimics the neural network of living organisms, determines the strength of connections between neurons through learning, and possesses problem-solving capabilities. A neural network has an input layer, an intermediate layer (hidden layer), and an output layer.

[0032] In this specification and other documents, when discussing neural networks, the process of determining the connection strength (also called weight coefficient) between neurons from existing information is sometimes referred to as "learning."

[0033] In this specification and other documents, the process of constructing a neural network using connection strengths obtained through learning and deriving new conclusions from it may be referred to as "inference."

[0034] [Electronic equipment 10] Figure 1A shows a block diagram of an electronic device according to one embodiment of the present invention.

[0035] The electronic device 10 shown in Figure 1A includes a processing unit 11, a display unit 12, and a storage unit 13.

[0036] The display unit 12 has a display device that includes a light-emitting device and a light-receiving device. Figure 1A shows an example in which the display unit 12 uses a display device that has a pixel 110 having sub-pixels G, B, R, and S.

[0037] Sub-pixels G, B, and R each have a light-emitting device. Sub-pixel R emits red light, sub-pixel G emits green light, and sub-pixel B emits blue light.

[0038] The sub-pixel S has a light-receiving device. The wavelength of light detected by the light-receiving device is not particularly limited. For example, the sub-pixel S can be a light-receiving device that detects either visible light or infrared light, or both.

[0039] The display unit 12 has the function of displaying an image using sub-pixels G, B, and R (light-emitting devices), and the function of capturing an image using sub-pixel S (light-receiving devices).

[0040] The memory unit 13 has a machine learning model using a neural network. The memory unit 13 may also be part of the processing unit 11.

[0041] The processing unit 11 has the function of inferring the position information of an object from the image data captured by the display unit 12 using a machine learning model. The object may or may not be in contact with the electronic device 10.

[0042] It is preferable to use a convolutional neural network (CNN) as the machine learning model.

[0043] It is preferable that the machine learning model is trained using image data of the object to be detected. For example, image data of one or more objects such as fingers, hands, and pens can be used. It is also preferable that the model is trained using image data of objects of various materials and colors, including not only bare hands but also hands wearing gloves. This allows the model to infer the position of an object (a gloved finger or hand) with high accuracy, even when the user of the electronic device 10 is wearing gloves. Furthermore, it is preferable that the model is trained using image data of the display unit 12 when dirt or water droplets are attached to its surface. This allows the model to infer the position of an object with high accuracy, even when dirt or water droplets are attached to the surface of the display unit 12.

[0044] Either supervised or unsupervised machine learning can be used to train a machine learning model.

[0045] There are no particular limitations on the machine learning model used; for example, regression models, classification models, or clustering models can be used.

[0046] When using a regression model, it is preferable to use supervised machine learning, for example, where image data is provided as input data (example problems) and location data is provided as output data (answers) for training.

[0047] When using a classification model, it is preferable to use supervised machine learning, for example, where image data is provided as input data (examples) and classification data is provided as output data (answers) for training.

[0048] When using a clustering model, it is preferable to perform unsupervised machine learning using image data as input, and then label the resulting clusters before using them.

[0049] An example of processing using the processing unit 11 in the electronic device 10 will be explained with reference to Figure 1B.

[0050] The electronic device 10 can capture an image of an object using the display unit 12, and the processing unit 11 can infer the position information of the object.

[0051] As shown in Figure 1B, the processing unit 11 performs processing using a neural network NN. The processing unit 11 receives image data 15 captured by the display unit 12. The image data 15 contains an image 17 of the object. The image data 15, including the image 17, is obtained by detecting the reflected light reflected by the object from the light source using a light receiving device. When the processing unit 11 receives the image data 15, it uses a machine learning model with a neural network NN to infer the position information 19 of the image 17. Figure 1B shows an example in which three-dimensional position information such as (x,y,z)=(X1,Y1,Z1) is inferred as the position information 19.

[0052] The processing unit 11 can perform processing based on the inferred position information. For example, it can control the signal or potential supplied to the display unit 12.

[0053] As described above, by using the processing unit 11 and the display unit 12 to detect non-contact objects and infer their position information, the non-contact sensor function of the electronic device 10 can be realized. The non-contact sensor function can also be called a hover sensor function, hover touch sensor function, near touch sensor function, or touchless sensor function. Furthermore, by using the processing unit 11 and the display unit 12 to detect objects that are in contact with the electronic device 10 and infer their position information, the touch sensor function (also called a direct touch sensor function) of the electronic device 10 can also be realized.

[0054] By implementing either or both non-contact sensor functionality and touch sensor functionality, the electronic device 10 can detect operations such as tapping, long-tapping, flicking, dragging, scrolling, multi-touching, swiping, pinching in, and pinching out, and execute processing corresponding to each operation.

[0055] [Processing step 11] The processing unit 11 has the function of performing calculations, inferences, etc., using data supplied from the display unit 12 and the storage unit 13. The processing unit 11 can supply calculation results, inference results, etc., to the storage unit 13, etc. Furthermore, the processing unit 11 can control the signals or potentials supplied to the display unit 12 based on the calculation results, inference results, etc.

[0056] The processing unit 11 includes, for example, an arithmetic circuit or a central processing unit (CPU).

[0057] The processing unit 11 may have a microprocessor such as a DSP (Digital Signal Processor) or a GPU (Graphics Processing Unit). The microprocessor may be implemented using a PLD (Programmable Logic Device) such as an FPGA (Field Programmable Gate Array) or FPAA (Field Programmable Analog Array). The processing unit 11 can perform various data processing and program control by interpreting and executing instructions from various programs via the processor. Programs that can be executed by the processor are stored in at least one of the processor's memory area and the storage unit 13.

[0058] The processing unit 11 may have main memory. The main memory includes at least one of volatile memory such as RAM (Random Access Memory) and non-volatile memory such as ROM (Read Only Memory).

[0059] For RAM, for example, DRAM (Dynamic Random Access Memory) or SRAM (Static Random Access Memory) are used, and a virtual memory space is allocated and used as the workspace for the processing unit 11. The operating system, application programs, program modules, program data, and lookup tables stored in the storage unit 13 are loaded into RAM for execution. These data, programs, and program modules loaded into RAM are directly accessed and manipulated by the processing unit 11.

[0060] ROM can store BIOS (Basic Input / Output System) and firmware, etc., which do not require rewriting. Examples of ROM include mask ROM, OTPROM (One Time Programmable Read Only Memory), and EPROM (Erasable Programmable Read Only Memory). Examples of EPROM include UV-EPROM (Ultra-Violet Erasable Programmable Read Only Memory), which allows data to be erased by ultraviolet irradiation, EEPROM (Electrically Erasable Programmable Read Only Memory), and flash memory.

[0061] It is preferable to use a transistor (also called an OS transistor) having a metal oxide (also called an oxide semiconductor) in the channel formation region of the processing unit 11. Because OS transistors have an extremely small off-current, by using an OS transistor as a switch to hold the charge (data) that has flowed into a capacitive element that functions as a memory element, it is possible to ensure a long data retention period. By using this characteristic in at least one of the registers and cache memory of the processing unit 11, the processing unit 11 can be turned off by operating it only when necessary and saving the information of the previous processing to the memory element in other cases. In other words, normally-off computing becomes possible, and the power consumption of electronic devices can be reduced.

[0062] Furthermore, the processing unit 11 may use a transistor containing silicon in its channel formation region (also known as a Si transistor).

[0063] Furthermore, it is preferable to use a combination of OS transistors and Si transistors in the processing unit 11.

[0064] [Storage section 13] The storage unit 13 has the function of storing the program executed by the processing unit 11. The storage unit 13 may also have the function of storing the calculation results and inference results generated by the processing unit 11, as well as image data captured by the display unit 12.

[0065] The storage unit 13 has at least one of volatile memory and non-volatile memory. The storage unit 13 may have volatile memory such as DRAM or SRAM. The storage unit 13 may have non-volatile memory such as ReRAM (Resistive Random Access Memory), PRAM (Phase Change Random Access Memory), FeRAM (Ferroelectric Random Access Memory), MRAM (Magnetoresistive Random Access Memory), or flash memory. The storage unit 13 may also have recording media drives such as hard disk drives (HDD) and solid state drives (SSD).

[0066] [Display section 12] As described above, the display unit 12 can use a display device having a light-emitting device and a light-receiving device. Here, if the pixels of the display device have three types of subpixels that exhibit different colors from each other, examples of such three subpixels include subpixels of three colors R, G, and B, and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). If there are four such subpixels, examples of such four subpixels include subpixels of four colors: R, G, B, and white (W), and subpixels of four colors: R, G, B, and Y.

[0067] Next, the pixel layout of the display device that can be used in the electronic device of this embodiment will be described. There are no particular limitations on the arrangement of subpixels that a pixel has, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0068] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), pentagon, or hexagon, or a polygon with rounded corners, an ellipse, or a circle. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting region of a light-emitting device or the light-receiving region of a light-receiving device.

[0069] The pixel 110 shown in Figures 2A to 2C has sub-pixels G, B, R, and S. There are no particular restrictions on the order in which the sub-pixels are arranged. When detecting light of a specific color with sub-pixel S, it is preferable to place the sub-pixel that emits light of that color next to sub-pixel S to improve detection accuracy. Furthermore, sub-pixels with more reliable light-emitting devices can be made smaller in size.

[0070] Pixel 110 shown in Figure 2A is the same as pixel 110 shown in Figure 1A, and a stripe arrangement is applied. In Figures 1A and 2A, an example is shown where sub-pixel R is located between sub-pixels B and S, but for example, sub-pixels R and G may be adjacent.

[0071] A matrix array is applied to pixel 110 as shown in Figure 2B. In Figure 2B, an example is shown where sub-pixels R and S are located in the same row, and sub-pixels B and G are located in the same row; however, for example, sub-pixels R and G or sub-pixel B may be located in the same row. Similarly, an example is shown where sub-pixels R and B are located in the same column, and sub-pixels S and G are located in the same column; however, for example, sub-pixels R and G or sub-pixel S may be located in the same column.

[0072] Pixel 110 shown in Figure 2C has a configuration in which a fourth subpixel is added to the S-stripe array. Pixel 110 in Figure 2C shows an example with a vertically elongated subpixel B and horizontally elongated subpixels R, G, and S. However, the vertically elongated subpixel may be any of subpixels R, G, or S, and there are no restrictions on the order of the horizontally elongated subpixels.

[0073] Figure 2D shows an example in which pixels 109a and 109b are arranged alternately. Pixel 109a has sub-pixels B, G, and S, and pixel 109b has sub-pixels R, G, and S. Figure 2D shows an example in which both pixels 109a and 109b have sub-pixels G and S, but is not particularly limited. It is preferable that both pixels 109a and 109b have sub-pixel S, as this can increase the resolution of the image. In this case, it is preferable that the light emitted by the sub-pixel (sub-pixel G in Figure 2D) that both pixels 109a and 109b have is detected by sub-pixel S.

[0074] Figure 2E shows a modified example in which the subpixels of pixels 109a and 109b shown in Figure 2D each have a roughly rectangular top surface shape with rounded corners.

[0075] The pixel layout shown in Figure 2F employs a two-dimensional hexagonal close-packed arrangement. This hexagonal close-packed layout is preferable because it allows for a higher aperture ratio for each subpixel. Figure 2F shows an example where each subpixel has a hexagonal top surface shape.

[0076] Figure 2G shows a modified example in which pixel 110, as shown in Figure 2F, has a roughly hexagonal top surface shape with rounded corners.

[0077] In photolithography, the finer the pattern being processed, the more significant the effects of light diffraction become. This compromises the fidelity of the transfer of the photomask pattern through exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, patterns with rounded corners are likely to be formed. Consequently, the top surface shape of subpixels may be a polygon with rounded corners, an ellipse, or a circle.

[0078] Furthermore, in a method for manufacturing a display device according to one aspect of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material, the curing of the resist film may be insufficient. A resist film that is not sufficiently cured may take a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, or a circle. For example, if an attempt is made to form a resist mask with a square top surface, a resist mask with a circular top surface may be formed, resulting in a circular top surface shape for the EL layer.

[0079] Furthermore, in order to achieve the desired shape of the upper surface of the EL layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, a correction pattern is added to the corners of the shape on the mask pattern.

[0080] Furthermore, a single pixel may have two or more types of light-receiving devices.

[0081] For example, a display device according to one aspect of the present invention has a first pixel that includes a light-emitting device, a first light-receiving device, and a second light-receiving device.

[0082] The first light-receiving device preferably has a smaller light-receiving area (also simply referred to as the light-receiving area) than the second light-receiving device. By narrowing the imaging range, the first light-receiving device can perform higher-resolution imaging compared to the second light-receiving device. In this case, the first light-receiving device can be used for imaging for personal authentication using fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), or faces. The wavelength of light to be detected by the first light-receiving device can be appropriately determined depending on the application. For example, it is preferable that the first light-receiving device detects visible light.

[0083] Furthermore, the second light-receiving device can be used as a touch sensor or a non-contact sensor. The wavelength of light to be detected by the second light-receiving device can be appropriately determined depending on the application. For example, it is preferable for the second light-receiving device to detect infrared light. This enables detection even in dark places. Also, when the second light-receiving device detects infrared light, it may be able to detect with higher sensitivity even when dust or water droplets are attached to the surface of electronic equipment, compared to a capacitive touch sensor.

[0084] Here, a touch sensor or a non-contact sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when the electronic device and the object are in direct contact. A non-contact sensor can detect an object even if the object does not come into contact with the electronic device. For example, it is preferable that the display device (or electronic device) can detect an object when the distance between the display device (or electronic device) and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the electronic device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the electronic device becoming dirty or scratched can be reduced, or it becomes possible to operate the electronic device without the object directly touching any dirt (e.g., dust or viruses) attached to the electronic device.

[0085] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 1 Hz to 240 Hz). In addition, the drive frequency of the touch sensor or non-contact sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or non-contact sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration makes it possible to achieve low power consumption and to increase the response speed of the touch sensor or non-contact sensor.

[0086] Furthermore, the object detection method may be selected according to the function based on the difference in detection accuracy between the first and second light-receiving devices. For example, one or both of the swipe and scroll functions of the display screen may be implemented by a non-contact sensor function using the second light-receiving device, while the input function using the keyboard displayed on the screen may be implemented by a high-definition touch sensor function using the first light-receiving device.

[0087] By equipping a single pixel with two types of light-receiving devices, it becomes possible to add two additional functions to the display function, thus enabling the multi-functionality of the display device.

[0088] Furthermore, in order to perform high-resolution imaging, it is preferable that the first light-receiving device be provided on all pixels of the display device. On the other hand, a second light-receiving device used for a touch sensor or non-contact sensor does not require the same level of precision as detection using the first light-receiving device, so it is sufficient to provide it on only some of the pixels of the display device. By reducing the number of second light-receiving devices in the display device to fewer than the number of first light-receiving devices, the detection speed can be increased.

[0089] Therefore, a display device according to one aspect of the present invention can be configured to have multiple first pixels and multiple second pixels as described above. The second pixel is similar to the first pixel in that it has a light-emitting device and a first light-receiving device, but differs from the first pixel in that it does not have a second light-receiving device and instead has other devices.

[0090] The second pixel may have various sensor devices or light-emitting devices that emit infrared light. By providing the second pixel with a device different from that of the first pixel, the display device can be made more multifunctional.

[0091] Furthermore, if a pixel is equipped with three light-emitting devices (red, green, and blue) to display full color, and two additional light-receiving devices are added, then one pixel will consist of five subpixels. In this way, achieving a high aperture ratio in a pixel with many subpixels is extremely difficult. Alternatively, it is difficult to realize a high-resolution display device using pixels with many subpixels.

[0092] Therefore, in a display device according to one aspect of the present invention, it is preferable that the island-shaped EL layer is formed by processing after the EL layer is deposited on one surface, rather than by forming it using a fine metal mask. This makes it possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, it is possible to realize a high-definition display device or a display device with a high aperture ratio that has a light detection function and incorporates a light receiving device.

[0093] As described above, a display device according to one aspect of the present invention can have a high aperture ratio or high resolution and a multi-functional configuration.

[0094] Figure 3A shows an example of pixels in a display device according to one embodiment of the present invention.

[0095] Pixel 180A, shown in Figure 3A, has sub-pixels G, B, R, PS, and IRS.

[0096] Figure 3A shows an example where a single pixel 180A is composed of two rows and three columns. Pixel 180A has three subpixels (subpixel G, subpixel B, and subpixel R) in the top row (row 1) and two subpixels (subpixel PS and subpixel IRS) in the bottom row (row 2). In other words, pixel 110 has two subpixels (subpixel G and subpixel PS) in the left column (column 1), subpixel B in the middle column (column 2), subpixel R in the right column (column 3), and subpixel IRS extending from the middle column to the right column.

[0097] As shown in Figure 3B, the lower row (second row) may also have three subpixels (subpixel PS and two subpixels IRS). As shown in Figure 3B, by aligning the arrangement of subpixels in the upper row and the lower row, it becomes possible to efficiently remove dust and other debris that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0098] In Figure 3B, the two subpixel IRS may each have an independent photodetector, or they may share a single photodetector. In other words, the pixel 110 shown in Figure 3B can be configured to have one photodetector for the subpixel PS and one or two photodetectors for the subpixel IRS.

[0099] The light-receiving area of ​​the sub-pixel PS is smaller than that of the sub-pixel IRS. A smaller light-receiving area results in a narrower imaging range, which helps suppress blurring in the image and improves resolution. Therefore, using sub-pixel PS allows for higher-definition or higher-resolution imaging compared to using sub-pixel IRS. For example, sub-pixel PS can be used to capture images for personal authentication, such as fingerprints, palm prints, irises, pulse patterns (including vein and artery patterns), or faces.

[0100] The resolution of the sub-pixel PS is 100 ppi or more, preferably 200 ppi or more, more preferably 300 ppi or more, more preferably 400 ppi or more, and even more preferably 500 ppi or more, and can be 2000 ppi or less, 1000 ppi or less, or 600 ppi or less. In particular, by arranging the light-receiving device with a resolution of 200 ppi or more and 600 ppi or less, preferably 300 ppi or more and 600 ppi or less, it can be suitably used for fingerprint imaging. Furthermore, a resolution of 500 ppi or more is preferable because it can comply with standards such as those of the National Institute of Standards and Technology (NIST). Assuming a resolution of 500 ppi for the light-receiving device, the size of one pixel becomes 50.8 μm, which is sufficient resolution to image the width of a fingerprint (typically 300 μm or more and 500 μm or less).

[0101] By setting the spacing of the light-receiving devices to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between an adjacent recess and a protrusion, a clear image of the fingerprint can be obtained. The distance between recesses and protrusions in a human fingerprint is said to be approximately 200 μm. The width of a human fingerprint is said to be between 300 μm and 500 μm, or 460 μm ± 150 μm. For example, the spacing of the light-receiving devices is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0102] The light-receiving device of the sub-pixel PS preferably detects visible light, and more preferably detects one or more of the following colors: blue, violet, blue-violet, green, yellow-green, yellow, orange, and red. The light-receiving device of the sub-pixel PS may also detect infrared light (including near-infrared light).

[0103] Furthermore, sub-pixel IRS can be used in touch sensors or non-contact sensors. Depending on the application, the wavelength of light detected by the sub-pixel IRS can be appropriately determined. For example, it is preferable for the sub-pixel IRS to detect infrared light. This enables touch detection even in dark places.

[0104] Figures 3C and 3D show an example of a cross-sectional view of an electronic device having a display device according to one embodiment of the present invention.

[0105] The electronic devices shown in Figures 3C and 3D each have a display device 100 and a light source 104 between the housing 103 and the protective member 105.

[0106] The light source 104 has a light-emitting device that emits infrared light 31IR. Preferably, the light source 104 is a light-emitting diode (LED).

[0107] Figure 3C shows an example where the light source 104 is positioned so as not to overlap with the display device 100. In this case, the light emitted from the light source 104 is emitted to the outside of the electronic device via the protective member 105.

[0108] Figure 3D shows an example where the display device and the light source 104 are mounted on top of each other. In this case, the light emitted from the light source 104 is emitted to the outside of the electronic device via the display device 100 and the protective member 105.

[0109] The display device 100 shown in Figures 3C and 3D corresponds to the cross-sectional structure between the dashed lines A1 and A2 in Figure 3A. The display device 100 has multiple light-emitting devices and multiple light-receiving devices between the substrate 106 and the substrate 102.

[0110] Sub-pixel R has a light-emitting device 130R that emits red light 31R. Sub-pixel G has a light-emitting device 130G that emits green light 31G. Sub-pixel B has a light-emitting device 130B that emits blue light 31B.

[0111] The sub-pixel PS has a light-receiving device 150PS, and the sub-pixel IRS has a light-receiving device 150IRS. The wavelength of light detected by the sub-pixel PS and sub-pixel IRS is not particularly limited.

[0112] As shown in Figures 3C and 3D, the infrared light 31IR emitted by the light source 104 is reflected by the object 108 (in this case, a finger), and the reflected light 32IR from the object 108 is incident on the light receiving device 150IRS. Although the object 108 is not in contact with the electronic device, the object 108 can be detected using the light receiving device 150IRS.

[0113] In this embodiment, an example is shown in which an object is detected using infrared light 31IR, but the wavelength of light detected by the light receiving device 150IRS is not particularly limited. It is preferable that the light receiving device 150IRS detects infrared light. Alternatively, the light receiving device 150IRS may detect visible light, or it may detect both infrared and visible light.

[0114] In touch sensors or non-contact sensors, object detection can sometimes be made easier by increasing the light-receiving area of ​​the light-receiving device. Therefore, as shown in Figure 4A, object 108 may be detected using both the light-receiving device 150PS and the light-receiving device 150IRS.

[0115] In Figure 4A, similar to Figures 3C and 3D, the infrared light 31IR emitted by the light source 104 is reflected by the object 108 (in this case, a finger), and the reflected light 32IR from the object 108 is incident on the light receiving device 150IRS. Furthermore, in Figure 4A, the green light 31G emitted by the light-emitting device 130G is also reflected by the object 108, and the reflected light 32G from the object 108 is incident on the light receiving device 150PS. Although the object 108 is not in contact with the electronic equipment, it can be detected using the light receiving devices 150IRS and 150PS.

[0116] Furthermore, the light-receiving device 150IRS (and the light-receiving device 150PS) can also be used to detect the object 108 that is in contact with the electronic device.

[0117] For example, as shown in Figure 4B, the green light 31G emitted by the light-emitting device 130G is reflected by the object 108, and the reflected light 32G from the object 108 is incident on the light-receiving device 150PS. The fingerprint of the object 108 can be imaged using the light-receiving device 150PS.

[0118] In this embodiment, an example is shown in which the light-receiving device 150PS detects an object using green light 31G emitted by the light-emitting device 130G. However, the wavelength of light detected by the light-receiving device 150PS is not particularly limited. The light-receiving device 150PS preferably detects visible light, and preferably detects one or more of the following colors: blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. The light-receiving device 150PS may also detect infrared light.

[0119] For example, the light-receiving device 150PS may have the function of detecting the red light 31R emitted by the light-emitting device 130R. Alternatively, the light-receiving device 150PS may have the function of detecting the blue light 31B emitted by the light-emitting device 130B.

[0120] Furthermore, it is preferable that the light-emitting device that emits light detected by the light-receiving device 150PS is located in a sub-pixel that is close in position to the sub-pixel PS within the pixel. For example, in pixel 180A, the light-receiving device 150PS detects the light emitted by the light-emitting device 130G of the sub-pixel G adjacent to the sub-pixel PS. This configuration can improve detection accuracy.

[0121] In one aspect of the present invention, the display device may have the above-described configuration of pixel 180A applied to all pixels, or the configuration of pixel 180A may be applied to some pixels and other configurations may be applied to other pixels.

[0122] For example, a display device according to one aspect of the present invention may have both the pixel 180A shown in Figure 5A and the pixel 180B shown in Figure 5B.

[0123] Pixel 180B, shown in Figure 5B, has sub-pixels G, B, R, PS, and X.

[0124] As shown in Figure 5C, a pixel may have three subpixels (subpixel PS and two subpixels X) in the lower row (second row). As described above, by aligning the arrangement of subpixels in the upper row and the lower row, it becomes possible to efficiently remove dust and other debris that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0125] Various functions can be realized in a display device, or in an electronic device equipped with such a display device, using the devices possessed by the sub-pixel X.

[0126] For example, a display device or electronic device may have the function of measuring at least one of the following using a device provided by a sub-pixel X: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, magnetism, temperature, chemical substances, time, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, physical condition, pulse, body temperature, blood oxygen concentration, and arterial blood oxygen saturation.

[0127] Furthermore, the functions of the display device or electronic device may include, for example, a strobe light function, a flash light function, a degradation correction function, an acceleration sensor function, an odor sensor function, a physical condition detection function, a pulse rate detection function, a body temperature detection function, a pulse oximeter function, or a blood oxygen concentration measurement function.

[0128] A strobe light function can be implemented, for example, by a configuration that repeatedly switches between emitting and not emitting light in short cycles.

[0129] A flashlight function can be implemented, for example, by generating a flash of light through instantaneous discharge using principles such as the electric double layer.

[0130] The strobe light and flashlight functions can be used, for example, for crime prevention or self-defense purposes. White is preferred as the light color for the strobe and flashlight. However, there are no particular limitations on the light color of the strobe and flashlight; the user can select one or more of the most suitable colors as appropriate, including white, blue, purple, blue-violet, green, yellow-green, yellow, orange, and red.

[0131] One degradation correction function is a function that corrects the degradation of the light-emitting device of at least one subpixel selected from subpixels G, B, and R. More specifically, if the reliability of the material used for the light-emitting device of subpixel G is poor, subpixel X can be configured to have the same configuration as subpixel G, thereby creating a configuration in pixel 180B that includes two subpixels G. This configuration doubles the area of ​​subpixel G. By doubling the area of ​​subpixel G, it is possible to increase the reliability by about twice compared to a configuration with only one subpixel G. Alternatively, by creating a configuration in pixel 180B that includes two subpixels G, if one subpixel G becomes non-emitting due to degradation or other reasons, the other subpixel G can compensate for the emission of light from the other subpixel G.

[0132] Although sub-pixel G was explicitly mentioned above, sub-pixels B and R can also be configured in the same way.

[0133] Acceleration sensor function, odor sensor function, physical condition detection function, pulse detection function, body temperature detection function, and blood oxygen concentration measurement function can each be realized by providing the necessary sensor devices in the sub-pixel X. Furthermore, the display device or electronic device can realize various functions depending on the sensor devices provided in the sub-pixel X.

[0134] As described above, by assigning various functions to the sub-pixel X shown in Figure 5B, a display device having 180B pixels can be called a multi-function display device or a multi-function panel. The sub-pixel X may have one or more functions, and the implementer can select the most appropriate function as appropriate.

[0135] Furthermore, a display device according to one aspect of the present invention may have a pixel composed of four subpixels, without having both subpixel X and subpixel IRS. That is, it may have a pixel having subpixel G, subpixel B, subpixel R, and subpixel PS. Also, the number of subpixels that a pixel has may differ from one another in the display device. On the other hand, in order to ensure uniform quality for each pixel, it is preferable that all pixels have the same number of subpixels.

[0136] Furthermore, for example, a display device according to one aspect of the present invention may have both the pixel 180A shown in Figure 5A and the pixel 180C shown in Figure 5D.

[0137] Pixel 180C, shown in Figure 5D, has sub-pixels G, B, R, PS, and IR.

[0138] Sub-pixel IR has a light-emitting device that emits infrared light. In other words, sub-pixel IR can be used as a light source for the sensor. By having a light-emitting device that emits infrared light in the display device, it is not necessary to provide a separate light source from the display device, which can reduce the number of components in the electronic device.

[0139] Figure 5E shows an example of a cross-sectional view of an electronic device having a display device according to one embodiment of the present invention.

[0140] The electronic device shown in Figure 5E has a display device 100 between the housing 103 and the protective member 105.

[0141] The display device 100 shown in Figure 5E corresponds to the cross-sectional structure between the dashed lines A1 and A2 in Figure 5A and the cross-sectional structure between the dashed lines A3 and A4 in Figure 5D. In other words, the display device 100 shown in Figure 5E has pixels 180A and pixels 180C.

[0142] Sub-pixel R has a light-emitting device 130R that emits red light 31R. Sub-pixel G has a light-emitting device 130G that emits green light 31G. Sub-pixel B has a light-emitting device 130B that emits blue light 31B.

[0143] Sub-pixel PS has a light-receiving device 150PS, and sub-pixel IRS has a light-receiving device 150IRS. Sub-pixel IR has a light-emitting device 130IR that emits infrared light 31IR.

[0144] As shown in Figure 5E, the infrared light 31IR emitted by the light-emitting device 130IR is reflected by the object 108 (in this case, a finger), and the reflected light 32IR from the object 108 is incident on the light-receiving device 150IRS. Although the object 108 is not in contact with the electronic device, the object 108 can be detected using the light-receiving device 150IRS.

[0145] Figures 6 to 9 show an example of the display device layout.

[0146] Non-contact sensor functionality can be achieved, for example, by illuminating an object (such as a finger, hand, or pen) with a light source fixed at a specific location, detecting the reflected light from the object with multiple sub-pixel IRS, and estimating the object's position based on the detection intensity ratio across the multiple sub-pixel IRS.

[0147] Pixels 180A having sub-pixel IRS can be configured to be arranged at regular intervals within the display unit, or arranged around the outer perimeter of the display unit.

[0148] By using only a portion of the pixels for non-contact detection, the driving frequency can be increased. Furthermore, since sub-pixels X or IR can be incorporated into other pixels, the display device can be made more multi-functional.

[0149] The display device 100A shown in Figure 6 has two types of pixels: pixels 180A and pixels 180B. In the display device 100A, one pixel 180A is provided for every 3x3 pixels (9 pixels), and the configuration of pixels 180B is applied to the remaining pixels.

[0150] Furthermore, the placement of pixel 180A is not limited to one pixel every 3x3 pixels. For example, the number of pixels used for touch detection can be appropriately determined, such as one pixel every 4 pixels (2x2 pixels), one pixel every 16 pixels (4x4 pixels), one pixel every 100 pixels (10x10 pixels), or one pixel every 900 pixels (30x30 pixels).

[0151] The display device 100B shown in Figure 7 has two types of pixels: pixels 180A and pixels 180C. In the display device 100B, one pixel 180A is provided for every 3x3 pixels (9 pixels), and the configuration of pixels 180C is applied to the remaining pixels.

[0152] The display device 100C shown in Figure 8 has two types of pixels: pixels 180A and pixels 180B. In the display device 100C, pixels 180A are provided on the outer periphery of the display unit, and the configuration of pixels 180B is applied to the other pixels.

[0153] When pixels 180A are provided on the outer perimeter of the display unit, the pixels 180A may be arranged to surround all four sides as shown in Figure 8, or they may be placed at the four corners, or one or more may be placed on each side, allowing for a variety of arrangements to be applied.

[0154] The display device 100D shown in Figure 9 has two types of pixels: pixels 180A and pixels 180C. In the display device 100D, pixels 180A are provided on the outer periphery of the display unit, and the configuration of pixels 180C is applied to the other pixels.

[0155] In Figures 6 and 8, infrared light 31IR emitted from a light source 104 located outside the display unit of the display device is reflected by an object 108, and the reflected light 32IR from the object 108 is incident on multiple pixels 180A. The reflected light 32IR is detected by sub-pixels IRS provided in the pixels 180A, and the position of the object 108 can be estimated by the detection intensity ratio of the multiple sub-pixels IRS.

[0156] The light source 104 is provided at least outside the display unit of the display device, and may be built into the display device or mounted separately on an electronic device. For example, the light source 104 can be a light-emitting diode that emits infrared light.

[0157] In Figures 7 and 9, infrared light 31IR emitted by the sub-pixel IR of pixel 180C is reflected by the object 108, and the reflected light 32IR from the object 108 is incident on multiple pixels 180A. The reflected light 32IR is detected by the sub-pixel IRS provided in the pixels 180A, and the position of the object 108 can be estimated by the detection intensity ratio of the multiple sub-pixel IRS.

[0158] As described above, the layout of the display device can take various forms.

[0159] Figure 10 shows an example of a pixel circuit having two light-receiving devices.

[0160] The pixels shown in Figure 10 include transistors M11, M12, M13, M14, M15, capacitor C1, and photodetectors PD1 and PD2.

[0161] Transistor M11 has its gate electrically connected to wiring TX, one of its source and drain is electrically connected to the anode electrode of photodetector PD1 and one of its source and drains, and the other of its source and drain is electrically connected to one of its source and drains, the first electrode of capacitor C1, and the gate of transistor M13. Transistor M12 has its gate electrically connected to wiring RS, and the other of its source and drain is electrically connected to wiring VRS. Transistor M13 has one of its source and drain is electrically connected to wiring VPI, and the other of its source and drain is electrically connected to one of its source and drains, and the gate of transistor M14 is electrically connected to wiring SE, and the other of its source and drain is electrically connected to wiring WX. Transistor M15 has its gate electrically connected to wiring SW, and the other of its source and drain is electrically connected to the anode electrode of photodetector PD2. The photodetectors PD1 and PD2 have their cathode electrodes electrically connected to the wiring CL. Capacitor C1 has its second electrode electrically connected to the wiring VCP.

[0162] Transistors M11, M12, M14, and M15 function as switches. Transistor M13 functions as an amplifying element (amplifier).

[0163] In one embodiment of the present invention, it is preferable that all transistors included in the pixel circuit are transistors (also called OS transistors) having a metal oxide (also called an oxide semiconductor) in the semiconductor layer where the channel is formed. OS transistors have an extremely small off-current and can retain the charge stored in a capacitor connected in series with the transistor for a long period of time. Furthermore, by using OS transistors, the power consumption of the display device can be reduced.

[0164] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use transistors (also called Si transistors) in which silicon is present in the semiconductor layer where the channel is formed, for all transistors included in the pixel circuit. Examples of silicon include single-crystal silicon, polycrystalline silicon, amorphous silicon, etc. In particular, it is preferable to use transistors (hereinafter also called LTPS transistors) in which low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) is present in the semiconductor layer. LTPS transistors have high field-effect mobility and can operate at high speeds.

[0165] Alternatively, in a display device according to one aspect of the present invention, it is preferable to use two types of transistors in the pixel circuit. Specifically, it is preferable that the pixel circuit has an OS transistor and an LTPS transistor. By changing the material of the semiconductor layer according to the function required of the transistor, the quality of the pixel circuit can be improved and the accuracy of sensing or imaging can be increased.

[0166] For example, it is preferable to apply LTPS transistors using low-temperature polysilicon in the semiconductor layer to all of transistors M11 to M15. Alternatively, it is preferable to apply OS transistors using metal oxide in the semiconductor layer to transistors M11, M12, and M15, and apply an LTPS transistor to transistor M13. In this case, either an OS transistor or an LTPS transistor may be applied to transistor M14.

[0167] By applying OS transistors to transistors M11, M12, and M15, it is possible to prevent the potential held at the gate of transistor M13, based on the charge generated in photodetectors PD1 and PD2, from leaking through transistors M11, M12, or M15.

[0168] On the other hand, it is preferable to use an LTPS transistor for transistor M13. LTPS transistors can achieve higher field-effect mobility than OS transistors and have superior driving capability and current capability. Therefore, transistor M13 can operate at a faster speed compared to transistors M11, M12, and M15. By using an LTPS transistor for transistor M13, an output corresponding to a minute potential based on the amount of light received by photodetector PD1 or photodetector PD2 can be quickly provided to transistor M14.

[0169] In other words, in the pixel circuit shown in Figure 10, transistors M11, M12, and M15 have low leakage current, and transistor M13 has high driving capability. As a result, the charge received by photodetectors PD1 and PD2 and transferred via transistors M11 and M15 can be held without leakage, and high-speed readout can be performed.

[0170] Since transistor M14 functions as a switch that directs the output from transistor M13 to wiring WX, it does not necessarily require a small off-current or high-speed operation like transistors M11 through M13 and M15. Therefore, the semiconductor layer of transistor M14 may be made of low-temperature polysilicon or an oxide semiconductor.

[0171] Note that although the transistors in Figure 10 are shown as n-channel transistors, p-channel transistors can also be used.

[0172] As mentioned above, when high-resolution and clear imaging is required, such as for personal authentication, it is preferable to have a small aperture ratio (light-receiving area) for the light-receiving device. On the other hand, when it is sufficient to detect an approximate position, such as for non-contact sensors, it is preferable to have a large aperture ratio (light-receiving area) for the light-receiving device. Therefore, it is preferable to configure the aperture ratio (light-receiving area) of light-receiving device PD1 to be smaller than that of light-receiving device PD2. Furthermore, when imaging requiring high resolution, it is preferable to turn on transistor M11 and turn off transistor M15 to perform imaging using only light-receiving device PD1. On the other hand, when performing detection over a large area, it is preferable to turn on both transistor M11 and transistor M15 to perform imaging using both light-receiving devices PD1 and PD2. This increases the amount of light that can be imaged, making it easier to detect objects located far from electronic devices.

[0173] As described above, an electronic device according to one aspect of the present invention can detect a non-contact object and infer its location information using a processing unit and a display unit. The accuracy of the inference can be improved by using a machine learning model in the processing unit.

[0174] Furthermore, a display device according to one aspect of the present invention can add two additional functions to a single pixel by equipping it with two types of light-receiving devices, thereby enabling the multi-functionalization of electronic devices. For example, it can realize a high-definition imaging function and a sensing function such as a touch sensor or a non-contact sensor. Moreover, by combining a pixel equipped with two types of light-receiving devices with a pixel of a different configuration, the functionality of the electronic device can be further increased. For example, a pixel having a light-emitting device that emits infrared light, or various sensor devices, can be used.

[0175] This embodiment can be combined with other embodiments as appropriate. Furthermore, if multiple configuration examples are shown within a single embodiment in this specification, these configuration examples can be combined as appropriate.

[0176] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 11 to 15.

[0177] A display device according to one aspect of the present invention has a light-emitting device and a light-receiving device in each pixel. In a display device according to one aspect of the present invention, since the pixels have a light-receiving function, it is possible to detect contact or proximity of an object while displaying an image. For example, in addition to displaying an image with all of the subpixels of the display device, some subpixels may emit light as a light source, some other subpixels may perform light detection, and the remaining subpixels may display an image.

[0178] A display device according to one aspect of the present invention has a display unit in which light-emitting devices are arranged in a matrix, and an image can be displayed on the display unit. Furthermore, light-receiving devices are arranged in a matrix on the display unit, and the display unit has an image display function, as well as one or both of an imaging function and a sensing function. The display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, an image can be captured, or the proximity or contact of an object (such as a finger, hand, or pen) can be detected. Moreover, in a display device according to one aspect of the present invention, the light-emitting devices can be used as a light source for a sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0179] In one embodiment of the present invention, when an object reflects (or scatters) light emitted by a light-emitting device of the display unit, a light-receiving device can detect the reflected light (or scattered light), thus enabling image capture or touch detection even in dark places.

[0180] A display device according to one aspect of the present invention has the function of displaying an image using a light-emitting device. In other words, the light-emitting device functions as a display device (also called a display element).

[0181] As the light-emitting device, it is preferable to use, for example, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials (also called luminescent materials) that the light-emitting device contains include fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence (TADF) materials). As the TADF material, a material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used. Since such TADF materials have a shorter emission lifetime (excitation lifetime), it is possible to suppress the decrease in efficiency in the high-brightness region of the light-emitting device. In addition, LEDs such as microLEDs (Light Emitting Diodes) can be used as the light-emitting device. Furthermore, inorganic compounds (such as quantum dot materials) can be used as the light-emitting material of the light-emitting device.

[0182] A display device according to one aspect of the present invention has the function of detecting light using a light-receiving device.

[0183] When a light-receiving device is used as an image sensor, the display device can capture an image using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0184] For example, an image sensor can be used to acquire biometric data such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device. By having the display device incorporate the biometric authentication sensor, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided, enabling miniaturization and weight reduction of the electronic device.

[0185] Furthermore, when a light-receiving device is used as a touch sensor, the display device can use the light-receiving device to detect the proximity or contact of an object.

[0186] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated from the light-receiving device is determined by the amount of light incident on it.

[0187] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0188] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0189] Because organic photodiodes have many layers that can share a common structure with organic EL devices, the number of deposition steps can be suppressed by depositing these common layers in a single process.

[0190] For example, one of the pair of electrodes (the common electrode) can be a layer with a common configuration in both the photodetector and the light-emitting device. Furthermore, it is preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a layer with a common configuration in both the photodetector and the light-emitting device.

[0191] Note that layers common to both light-receiving and light-emitting devices may have different functions in the light-emitting device and the light-receiving device. In this specification, components are referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, layers common to both light-receiving and light-emitting devices may have the same function in the light-emitting device and the light-receiving device. A hole transport layer functions as a hole transport layer in both the light-emitting and light-receiving devices, and an electron transport layer functions as an electron transport layer in both the light-emitting and light-receiving devices.

[0192] When manufacturing a display device having multiple organic EL devices, each with a different light-emitting layer color, it is necessary to form each light-emitting layer with a different color in an island-like structure.

[0193] For example, island-shaped light-emitting layers can be formed using a vacuum deposition method with a metal mask (also called a shadow mask). However, with this method, deviations from the design occur in the shape and position of the island-shaped light-emitting layers due to various factors such as the precision of the metal mask, the misalignment between the metal mask and the substrate, the deflection of the metal mask, and the spreading of the contour of the formed film due to vapor scattering. This makes it difficult to achieve high resolution and high aperture ratio in display devices.

[0194] In a method for manufacturing a display device according to one aspect of the present invention, island-shaped pixel electrodes (also called lower electrodes) are formed, and a first layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a first color is formed on one surface, and then a first sacrificial layer is formed on the first layer. Then, a first resist mask is formed on the first sacrificial layer, and the first layer and the first sacrificial layer are processed using the first resist mask to form an island-shaped first layer. Subsequently, a second layer (which can be called an EL layer or a part of an EL layer) containing a light-emitting layer that emits light of a second color is formed in an island shape using the second sacrificial layer and the second resist mask, similar to the first layer.

[0195] Thus, in the method for manufacturing a display device according to one aspect of the present invention, the island-shaped EL layer is not formed using a fine metal mask, but rather by processing after the EL layer has been deposited on one surface. Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Furthermore, since the EL layer can be manufactured separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. In addition, by providing a sacrificial layer (which may also be called a mask layer) on the EL layer, the damage that the EL layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0196] While it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm using, for example, a metal mask formation method, the above method allows for narrowing the spacing to 3 μm or less, 2 μm or less, or even 1 μm or less.

[0197] Furthermore, the pattern of the EL layer itself (which can also be called the processing size) can be made extremely small compared to when a metal mask is used. Also, for example, when a metal mask is used to create different EL layers, variations in thickness occur between the center and edges of the EL layer, so the effective area that can be used as an emitting region is small relative to the area of ​​the EL layer. On the other hand, with the above manufacturing method, the EL layer is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform within the EL layer, and even if the pattern is fine, almost the entire area can be used as an emitting region. As a result, it is possible to manufacture a display device that combines high resolution and a high aperture ratio.

[0198] Here, the first layer and the second layer each include at least an emissive layer, and preferably consist of multiple layers. Specifically, it is preferable to have one or more layers on the emissive layer. By having other layers between the emissive layer and the sacrificial layer, it is possible to suppress the exposure of the emissive layer to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the emissive layer. This can improve the reliability of the light-emitting device.

[0199] Furthermore, in light-emitting devices that emit light of different colors, it is not necessary to create all the layers constituting the EL layer separately; some layers can be formed in the same process. In one embodiment of the present invention, a method for manufacturing a display device involves forming some of the layers constituting the EL layer in island-like structures for each color, then removing the sacrificial layer, and forming the remaining layers constituting the EL layer and a common electrode (also called an upper electrode) in common for each color of light-emitting device.

[0200] The same manufacturing methods as for light-emitting devices can be applied to light-receiving devices. The island-shaped active layer (also called the photoelectric conversion layer) of the light-receiving device is not formed using a fine metal mask, but rather by depositing a film that will become the active layer onto one surface and then processing it, so that the island-shaped active layer can be formed with a uniform thickness. In addition, by providing a sacrificial layer on the active layer, the damage that the active layer receives during the manufacturing process of the display device can be reduced, and the reliability of the light-receiving device can be improved.

[0201] [Example of a display device configuration] Figures 11A and 11B show a display device according to one embodiment of the present invention.

[0202] Figure 11A shows a top view of the display device 100E. The display device 100E has a display unit in which a plurality of pixels 110 are arranged in a matrix, and a connection unit 140 outside the display unit. One pixel 110 is composed of five sub-pixels: sub-pixels 110a, 110b, 110c, 110d, and 110e. Note that the pixels are not limited to the configuration shown in Figure 11A, and for example, each configuration exemplified in Embodiment 1 can also be applied.

[0203] Figure 11A shows an example where a single pixel 110 is composed of 2 rows and 3 columns. Pixel 110 has 3 subpixels (subpixels 110a, 110b, and 110c) in the top row (row 1) and 2 subpixels (subpixels 110d and 110e) in the bottom row (row 2). In other words, pixel 110 has 2 subpixels (subpixels 110a and 110d) in the left column (column 1), subpixel 110b in the middle column (column 2), subpixel 110c in the right column (column 3), and subpixel 110e extending from the middle column to the right column.

[0204] In this embodiment, sub-pixels 110a, 110b, and 110c each have light-emitting devices that emit light of different colors, and sub-pixels 110d and 110e each have light-receiving devices with different light-receiving areas. For example, sub-pixels 110a, 110b, and 110c correspond to sub-pixels G, B, and R shown in Figure 5A, etc. Also, sub-pixel 110d corresponds to sub-pixel PS shown in Figure 5A, etc., and sub-pixel 110e corresponds to sub-pixel IRS shown in Figure 5A, etc.

[0205] Furthermore, the device provided in each sub-pixel 110e may be changed for each pixel. This allows for a configuration where some sub-pixels 110e correspond to sub-pixel IRS, and other sub-pixels 110e correspond to sub-pixel X (see Figure 5B) or sub-pixel IR (see Figure 5D).

[0206] Figure 11A shows an example where the connection portion 140 is located below the display portion in a top view, but it is not particularly limited. The connection portion 140 only needs to be provided at least one location on the top, right, left, or bottom of the display portion in a top view, and may be provided so as to surround all four sides of the display portion. Also, there may be one or more connection portions 140.

[0207] Figure 11B shows cross-sectional views between the dashed lines X1-X2, X3-X4, and Y1-Y2 in Figure 11A. Furthermore, as a modified example, Figures 12A to 12C, 13A and 13B, and 14A to 14C show cross-sectional views between the dashed lines X1-X2 and Y1-Y2 in Figure 11A.

[0208] As shown in Figure 11B, the display device 100E has light-emitting devices 130a, 130b, 130c and light-receiving devices 150d, 150e arranged on a layer 101 containing transistors, and a protective layer 131 is provided to cover these light-emitting and light-receiving devices. A substrate 120 is bonded to the protective layer 131 by a resin layer 122. In addition, an insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between two adjacent devices (a light-emitting device and a light-receiving device, two light-emitting devices, or two light-receiving devices).

[0209] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0210] The layer 101 containing transistors can be, for example, a laminated structure in which multiple transistors are provided on a substrate and an insulating layer is provided to cover these transistors. The layer 101 containing transistors may have recesses between two adjacent devices. For example, recesses may be provided in the insulating layer located on the outermost surface of the layer 101 containing transistors. An example of the configuration of the layer 101 containing transistors will be described later in Embodiment 3.

[0211] Each of the light-emitting devices 130a, 130b, and 130c emits light of a different color. Preferably, the light-emitting devices 130a, 130b, and 130c are a combination that emits, for example, red (R), green (G), and blue (B) light.

[0212] The light-emitting device has an EL layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0213] In a light-emitting device, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode.

[0214] The light-emitting device 130a includes a conductive layer 111a on a layer 101 containing a transistor, an island-shaped first layer 113a on the conductive layer 111a, a fourth layer 114 on the island-shaped first layer 113a, and a common electrode 115 on the fourth layer 114. The conductive layer 111a functions as a pixel electrode. In the light-emitting device 130a, the first layer 113a and the fourth layer 114 can be collectively called the EL layer. For an example of the configuration of the light-emitting device, refer to the description in Embodiment 4.

[0215] The first layer 113a includes, for example, a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer. Alternatively, the first layer 113a includes, for example, a first light-emitting unit, a charge generation layer, and a second light-emitting unit.

[0216] The fourth layer 114 may, for example, have an electron injection layer. Alternatively, the fourth layer 114 may have an electron transport layer and an electron injection layer laminated together.

[0217] The light-emitting device 130b includes a conductive layer 111b on a layer 101 containing a transistor, an island-shaped second layer 113b on the conductive layer 111b, a fourth layer 114 on the island-shaped second layer 113b, and a common electrode 115 on the fourth layer 114. The conductive layer 111b functions as a pixel electrode. In the light-emitting device 130b, the second layer 113b and the fourth layer 114 can be collectively called the EL layer.

[0218] The light-emitting device 130c includes a conductive layer 111c on a layer 101 containing a transistor, an island-shaped third layer 113c on the conductive layer 111c, a fourth layer 114 on the island-shaped third layer 113c, and a common electrode 115 on the fourth layer 114. The conductive layer 111c functions as a pixel electrode. In the light-emitting device 130c, the third layer 113c and the fourth layer 114 can be collectively called the EL layer.

[0219] Each of the light-emitting devices 130a, 130b, and 130c emits light of a different color. Preferably, the light-emitting devices 130a, 130b, and 130c are a combination that emits, for example, red (R), green (G), and blue (B) light.

[0220] The photodetector has an active layer between a pair of electrodes. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0221] In a photodetector, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode. In other words, the photodetector can detect incoming light, generate an electric charge, and extract it as an electric current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as the cathode and the common electrode as the anode.

[0222] The light-receiving device 150d includes a conductive layer 111d on a layer 101 containing a transistor, an island-shaped fifth layer 113d on the conductive layer 111d, a fourth layer 114 on the island-shaped fifth layer 113d, and a common electrode 115 on the fourth layer 114. The conductive layer 111d functions as a pixel electrode.

[0223] The fifth layer 113d includes, for example, a hole transport layer, an active layer, and an electron transport layer.

[0224] The light-receiving device 150e includes a conductive layer 111e on a layer 101 containing a transistor, an island-shaped sixth layer 113e on the conductive layer 111e, a fourth layer 114 on the island-shaped sixth layer 113e, and a common electrode 115 on the fourth layer 114. The conductive layer 111e functions as a pixel electrode.

[0225] The sixth layer 113e includes, for example, a hole transport layer, an active layer, and an electron transport layer.

[0226] The fourth layer 114 is a layer common to both the light-emitting device and the light-receiving device. As described above, the fourth layer 114 has, for example, an electron injection layer. Alternatively, the fourth layer 114 may have an electron transport layer and an electron injection layer stacked together.

[0227] The common electrode 115 is electrically connected to the conductive layer 123 provided in the connection portion 140. In Figure 11B, an example is shown in which a fourth layer 114 is provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected via the fourth layer 114. The fourth layer 114 does not necessarily have to be provided in the connection portion 140. For example, in Figure 12C, an example is shown in which the fourth layer 114 is not provided on the conductive layer 123, and the conductive layer 123 and the common electrode 115 are directly connected.

[0228] For example, by using a mask (also called an area mask or rough metal mask) to define the film deposition area, the region where the film is deposited on the fourth layer 114 and the common electrode 115 can be changed.

[0229] Each side of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e is covered by insulating layers 125 and 127. This prevents the fourth layer 114 (or common electrode 115) from coming into contact with any side of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e, thereby preventing short circuits in the light-emitting device and the light-receiving device. This improves the reliability of the light-emitting device and the light-receiving device.

[0230] The insulating layer 125 preferably covers at least the sides of the conductive layers 111a to 111e. Furthermore, it is preferable that the insulating layer 125 covers the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e. The insulating layer 125 can be configured to be in contact with each of the sides of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e.

[0231] The insulating layer 127 is provided on the insulating layer 125 so as to fill the recesses formed in the insulating layer 125. The insulating layer 127 can be configured to overlap (or cover) the sides of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e via the insulating layer 125.

[0232] By providing insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, thereby reducing the unevenness of the surface of layers (such as common electrodes) formed on the island-shaped layers, making them flatter. Consequently, the coverage of the common electrode can be improved, and step breakage of the common electrode can be prevented.

[0233] Furthermore, the insulating layer 125 or insulating layer 127 can be provided in contact with the island-shaped layers. This prevents the peeling of the island-shaped layers. The close contact between the insulating layer and the island-shaped layers provides the effect of fixing or bonding adjacent island-shaped layers to each other.

[0234] An organic resin film is preferred for the insulating layer 127. When the side surface of the EL layer and the photosensitive organic resin film are in direct contact, organic solvents that may be contained in the photosensitive organic resin film may damage the EL layer. By using an aluminum oxide film formed by atomic layer deposition (ALD) for the insulating layer 125, it is possible to create a configuration in which the photosensitive organic resin film used for the insulating layer 127 and the side surface of the EL layer do not come into direct contact. This makes it possible to suppress the dissolution of the EL layer by organic solvents.

[0235] Furthermore, it is not necessary to provide either the insulating layer 125 or the insulating layer 127. For example, by forming a single-layer insulating layer 125 using an inorganic material, the insulating layer 125 can be used as a protective insulating layer for the EL layer. This can improve the reliability of the display device. Alternatively, by forming a single-layer insulating layer 127 using an organic material, for example, the space between adjacent EL layers can be filled with the insulating layer 127 and flattened. This can improve the coverage of the common electrode (upper electrode) formed on the EL layer and the insulating layer 127.

[0236] Figure 12A shows an example where the insulating layer 125 is not provided. When the insulating layer 125 is not provided, the insulating layer 127 can be configured to be in contact with the sides of each of the conductive layers 111a to 111e, the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e. The insulating layer 127 can be provided to fill the spaces between the EL layers of each light-emitting device.

[0237] In this case, it is preferable to use an organic material for the insulating layer 127 that causes little damage to the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e. For example, it is preferable to use an organic material for the insulating layer 127 such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.

[0238] Figure 12B also shows an example where the insulating layer 127 is not provided.

[0239] The fourth layer 114 and the common electrode 115 are provided on the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, the sixth layer 113e, the insulating layer 125, and the insulating layer 127. Before the insulating layers 125 and 127 are provided, a step difference occurs due to the region where the pixel electrode and EL layer are provided and the region where the pixel electrode and EL layer are not provided (the region between the light-emitting devices). In one embodiment of the present invention, the presence of the insulating layers 125 and 127 can flatten this step difference and improve the coverage of the fourth layer 114 and the common electrode 115. Therefore, connection failures due to step breaks can be suppressed. Alternatively, it is possible to suppress the local thinning of the common electrode 115 due to the step difference, which would increase its electrical resistance.

[0240] To improve the flatness of the formation surfaces of the fourth layer 114 and the common electrode 115, it is preferable that the heights of the upper surfaces of the insulating layer 125 and the upper surface of the insulating layer 127 match or approximately match the height of at least one of the upper surfaces of the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e, respectively. Furthermore, it is preferable that the upper surface of the insulating layer 127 has a flat shape, and may have convex portions, convex curved surfaces, concave curved surfaces, or recesses.

[0241] The insulating layer 125 has regions that are in contact with the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e, and functions as a protective insulating layer for the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e. By providing the insulating layer 125, it is possible to suppress the intrusion of impurities (oxygen, moisture, etc.) into the interior from the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e, resulting in a highly reliable display device.

[0242] In a cross-sectional view, if the width (thickness) of the insulating layer 125 in the region in contact with the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e is large, the spacing between the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e may increase, resulting in a lower aperture ratio. Conversely, if the width (thickness) of the insulating layer 125 is small, the effect of suppressing the intrusion of impurities into the interior from the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e may be reduced. The width (thickness) of the insulating layer 125 in the region in contact with the sides of the first layer 113a, the second layer 113b, the third layer 113c, the fifth layer 113d, and the sixth layer 113e is preferably 3 nm to 200 nm, more preferably 3 nm to 150 nm, more preferably 5 nm to 150 nm, more preferably 5 nm to 100 nm, more preferably 10 nm to 100 nm, and more preferably 10 nm to 50 nm. By setting the width (thickness) of the insulating layer 125 within the above range, a display device with a high aperture ratio and high reliability can be made.

[0243] The insulating layer 125 can be an insulating layer having an inorganic material. For example, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used for the insulating layer 125. The insulating layer 125 may be a single layer or a laminated structure. Examples of oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, hafnium oxide film, and tantalum oxide film. Examples of nitride insulating films include silicon nitride film and aluminum nitride film. Examples of oxidative nitride insulating films include silicon oxidative nitride film and aluminum oxidative nitride film. Examples of nitride oxide insulating films include silicon nitride oxide film and aluminum nitride oxide film. In particular, aluminum oxide is preferred because it has a high selectivity ratio with the EL layer during etching and has the function of protecting the EL layer during the formation of the insulating layer 127, which will be described later. In particular, by applying inorganic insulating films such as aluminum oxide films, hafnium oxide films, and silicon oxide films formed by the ALD method to the insulating layer 125, it is possible to form an insulating layer 125 with fewer pinholes and excellent protection for the EL layer. Alternatively, the insulating layer 125 may have a laminated structure of a film formed by the ALD method and a film formed by the sputtering method. For example, the insulating layer 125 may have a laminated structure of an aluminum oxide film formed by the ALD method and a silicon nitride film formed by the sputtering method.

[0244] In this specification, the term "oxide-nitride" refers to a material in which the oxygen content is greater than the nitrogen content, and the term "nitride oxide" refers to a material in which the nitrogen content is greater than the oxygen content. For example, when "silicon oxynitride" is written, it refers to a material in which the oxygen content is greater than the nitrogen content, and when "silicon nitride oxide" is written, it refers to a material in which the nitrogen content is greater than the oxygen content.

[0245] The insulating layer 125 can be formed using sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD), ALD, or other methods. It is preferable to form the insulating layer 125 using the ALD method, which provides good coverage.

[0246] The insulating layer 127 provided on the insulating layer 125 has the function of flattening the recess in the insulating layer 125 formed between adjacent light-emitting devices. In other words, the presence of the insulating layer 127 improves the flatness of the surface on which the common electrode 115 is formed. Suitable insulating layers 127 include those made of organic materials. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimidoamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as the insulating layer 127. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the insulating layer 127. Furthermore, a photosensitive resin can be used as the insulating layer 127. A photoresist may be used as the photosensitive resin. The photosensitive resin can be a positive-type material or a negative-type material.

[0247] The difference between the height of the upper surface of the insulating layer 127 and the height of the upper surface of any of the first layer 113a, second layer 113b, third layer 113c, fifth layer 113d, and sixth layer 113e is preferably 0.5 times or less the thickness of the insulating layer 127, and more preferably 0.3 times or less. Alternatively, the insulating layer 127 may be provided such that the upper surface of any of the first layer 113a, second layer 113b, third layer 113c, fifth layer 113d, and sixth layer 113e is higher than the upper surface of the insulating layer 127. Alternatively, the insulating layer 127 may be provided such that the upper surface of the insulating layer 127 is higher than the upper surface of the light-emitting layer of the first layer 113a, second layer 113b, or third layer 113c.

[0248] It is preferable to have a protective layer 131 on the light-emitting devices 130a, 130b, 130c and the light-receiving devices 150d, 150e. Providing the protective layer 131 can improve the reliability of the light-emitting devices and the light-receiving devices.

[0249] The conductivity of the protective layer 131 is not required. The protective layer 131 can be at least one of an insulating film, a semiconductor film, and a conductive film.

[0250] The presence of an inorganic film in the protective layer 131 prevents oxidation of the common electrode 115 and suppresses the intrusion of impurities (such as moisture and oxygen) into the light-emitting devices 130a, 130b, 130c and the light-receiving devices 150d, 150e, thereby suppressing the degradation of the light-emitting and light-receiving devices and improving the reliability of the display device.

[0251] For the protective layer 131, inorganic insulating films such as oxide insulating films, nitride insulating films, oxidative nitride insulating films, and nitride oxide insulating films can be used. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxidative nitride insulating films include silicon oxide nitride films and aluminum oxide nitride films. Examples of nitride oxide insulating films include silicon oxide nitride films and aluminum oxide nitride films.

[0252] The protective layer 131 preferably has a nitride insulating film or a nitride oxide insulating film, and more preferably has a nitride insulating film.

[0253] Furthermore, the protective layer 131 may also be an inorganic film containing In-Sn oxide (also known as ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or indium gallium zinc oxide (In-Ga-Zn oxide, also known as IGZO). The inorganic film is preferably highly resistive, and more specifically, it is preferably more resistive than the common electrode 115. The inorganic film may further contain nitrogen.

[0254] When the light emitted from a light-emitting device is extracted via a protective layer 131, it is preferable that the protective layer 131 has high transmittance to visible light. For example, ITO, IGZO, and aluminum oxide are preferred because they are inorganic materials with high transmittance to visible light.

[0255] As the protective layer 131, for example, a laminated structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a laminated structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used. By using such a laminated structure, it is possible to suppress the penetration of impurities (water, oxygen, etc.) into the EL layer.

[0256] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film.

[0257] The upper edges of each conductive layer 111a to conductive layer 111c are not covered by an insulating layer. Therefore, the spacing between adjacent light-emitting devices can be made extremely narrow. Consequently, a high-definition or high-resolution display device can be made.

[0258] As shown in Figures 13A and 13B, the ends of each of the conductive layers 111a to 111c may be covered by the insulating layer 121.

[0259] The insulating layer 121 can be a single-layer structure or a multilayer structure using one or both of an inorganic insulating film and an organic insulating film.

[0260] Examples of organic insulating materials that can be used for the insulating layer 121 include acrylic resin, epoxy resin, polyimide resin, polyamide resin, polyimidoamide resin, polysiloxane resin, benzocyclobutene resin, and phenolic resin. Furthermore, inorganic insulating films that can be used for the protective layer 131 can be used as inorganic insulating films for the insulating layer 121.

[0261] When an inorganic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, impurities are less likely to enter the light-emitting device compared to when an organic insulating film is used, thereby improving the reliability of the light-emitting device. When an organic insulating film is used as the insulating layer 121 covering the edges of the pixel electrodes, the step coverage is higher compared to when an inorganic insulating film is used, and it is less affected by the shape of the pixel electrodes. Therefore, short circuits in the light-emitting device can be prevented. Specifically, when an organic insulating film is used as the insulating layer 121, the shape of the insulating layer 121 can be processed into a tapered shape or the like. In this specification, a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface or the surface to be formed. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90°.

[0262] The insulating layer 121 is optional. Omitting the insulating layer 121 may increase the aperture ratio of the subpixels. Alternatively, it may be possible to reduce the distance between subpixels, thereby increasing the detail or resolution of the display device.

[0263] In Figure 13A, an example is shown in which the fourth layer 114 extends into the region of the first layer 113a and the second layer 113b, but as shown in Figure 13B, a void 134 may be formed in that region.

[0264] The gap 134 contains, for example, one or more selected from the group consisting of air, nitrogen, oxygen, carbon dioxide, and Group 18 elements (typically helium, neon, argon, xenon, krypton, etc.). Alternatively, the gap 134 may be filled with a resin or the like.

[0265] Further, FIG. 11B and the like show an example in which the end of the conductive layer 111a and the end of the first layer 113a are aligned or substantially aligned. In other words, the top surface shapes of the conductive layer 111a and the first layer 113a match or substantially match.

[0266] Regarding the conductive layer 111a and the first layer 113a, the conductive layer 111b and the second layer 113b, the conductive layer 111c and the third layer 113c, etc., the magnitude relationship of their shapes is not particularly limited. FIG. 14A shows an example in which the end of the first layer 113a is located inward of the end of the conductive layer 111a. In FIG. 14A, the end of the first layer 113a is located on the conductive layer 111a. Further, FIG. 14B shows an example in which the end of the first layer 113a is located outward of the end of the conductive layer 111a. In FIG. 14B, the first layer 113a is provided so as to cover the end of the conductive layer 111a.

[0267] Note that when the ends are aligned or substantially aligned, and when the top surface shapes match or substantially match, it can be said that at least a part of the outline overlaps between the stacked layers when viewed from above. For example, this includes cases where an upper layer and a lower layer are processed using the same mask pattern or a mask pattern that is partially the same. However, strictly speaking, the outlines may not overlap, and the upper layer may be located inside the lower layer, or the upper layer may be located outside the lower layer; even in these cases, it is considered that the ends are substantially aligned or the top surface shapes substantially match.

[0268] Further, FIG. 14C shows a modified example of the insulating layer 127. In FIG. 14C, the top surface of the insulating layer 127 has a shape that gently bulges toward the center in cross-sectional view, that is, has a convex curved surface, and also has a shape that is depressed at and near the center, that is, has a concave curved surface.

[0269] Figures 15A to 15F show the cross-sectional structure of the region 139 including the insulating layer 127 and its surrounding area.

[0270] Figure 15A shows an example where the thicknesses of the first layer 113a and the second layer 113b are different. The height of the upper surface of the insulating layer 125 is the same as or approximately the same as the height of the upper surface of the first layer 113a on the first layer 113a side, and the height is the same as or approximately the same as the height of the upper surface of the second layer 113b on the second layer 113b side. The upper surface of the insulating layer 127 has a gentle slope, with the first layer 113a side being higher and the second layer 113b side being lower. Thus, it is preferable that the heights of the insulating layer 125 and insulating layer 127 are the same as the height of the upper surface of the adjacent EL layer. Alternatively, the upper surfaces of the insulating layer 125 and insulating layer 127 may have a flat portion that is the same as the height of the upper surface of either of the adjacent EL layers.

[0271] In Figure 15B, the upper surface of the insulating layer 127 has a region that is higher than the upper surfaces of the first layer 113a and the second layer 113b. As shown in Figure 15B, the upper surface of the insulating layer 127 can have a shape that is convex in the center and its vicinity when viewed in cross-section, that is, a shape that has a convex curved surface.

[0272] In Figure 15C, the upper surface of the insulating layer 127 has a shape that bulges gently toward the center, i.e., a convex curved surface, and a shape that is concave in the center and its vicinity, i.e., a concave curved surface. The insulating layer 127 has a region that is higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b. In region 139, the display device has at least one of the sacrificial layer 118a and the sacrificial layer 119a, and has a first region where the insulating layer 127 is higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b and is located outside the insulating layer 125, and the first region is located above at least one of the sacrificial layer 118a and the sacrificial layer 119a. Furthermore, in region 139, the display device has at least one of the sacrificial layer 118b and the sacrificial layer 119b, and has a second region in which the insulating layer 127 is higher than the upper surface of the first layer 113a and the upper surface of the second layer 113b and is located outside the insulating layer 125, and the second region is located on at least one of the sacrificial layer 118b and the sacrificial layer 119b.

[0273] In Figure 15D, the upper surface of the insulating layer 127 has a region that is lower than the upper surfaces of the first layer 113a and the second layer 113b. Furthermore, in cross-sectional view, the upper surface of the insulating layer 127 has a concave shape, meaning that the center and its vicinity are recessed.

[0274] In Figure 15E, the upper surface of the insulating layer 125 has a region that is higher than the upper surfaces of the first layer 113a and the second layer 113b. That is, on the surface where the fourth layer 114 is formed, the insulating layer 125 protrudes, forming a convex portion.

[0275] In forming the insulating layer 125, for example, if the insulating layer 125 is formed to match or approximately match the height of the sacrificial layer, a protruding shape of the insulating layer 125 may be formed, as shown in Figure 15E.

[0276] In Figure 15F, the upper surface of the insulating layer 125 has a region that is lower than the upper surface of the first layer 113a and the upper surface of the second layer 113b. That is, the insulating layer 125 forms a recess on the surface on which the fourth layer 114 is formed.

[0277] Thus, the insulating layer 125 and the insulating layer 127 can be made into various shapes.

[0278] As the sacrificial layer, for example, an inorganic film such as a metal film, alloy film, metal oxide film, semiconductor film, or inorganic insulating film can be used.

[0279] The sacrificial layer can be made of metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metallic materials.

[0280] Furthermore, metal oxides such as In-Ga-Zn oxide can be used as the sacrificial layer. For example, an In-Ga-Zn oxide film can be formed as the sacrificial layer using a sputtering method. In addition, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon can also be used.

[0281] In addition, element M (where M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium) may be used instead of gallium.

[0282] Furthermore, various inorganic insulating films that can be used for the protective layer 131 can be used as the sacrificial layer. In particular, oxide insulating films are preferred because they have higher adhesion to the EL layer compared to nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used as the sacrificial layer. For example, an aluminum oxide film can be formed as the sacrificial layer using the ALD method. Using the ALD method is preferable because it reduces damage to the substrate (especially the EL layer). For example, a silicon nitride film can be formed as the sacrificial layer using the sputtering method.

[0283] For example, a laminated structure can be applied in which an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method and an In-Ga-Zn oxide film formed using the sputtering method are used as the sacrificial layer. Alternatively, a laminated structure can be applied in which an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method and an aluminum film, tungsten film, or inorganic insulating film (e.g., a silicon nitride film) formed using the sputtering method are used as the sacrificial layer.

[0284] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as MM (Metal Mask) structured devices. Furthermore, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structured devices.

[0285] In this specification, a structure in which different light-emitting layers are created or painted for each color of light-emitting device (here, blue (B), green (G), and red (R)) may be referred to as an SBS (Side By Side) structure. The SBS structure allows for the optimization of materials and configuration for each light-emitting device, thus increasing the freedom of material and configuration selection and making it easier to improve brightness and reliability.

[0286] Further, in the present specification and the like, a light-emitting device capable of emitting white light may be referred to as a white light-emitting device. Note that a white light-emitting device can realize a full-color display device when used in combination with a colored layer (for example, a color filter).

[0287] Further, light-emitting devices can be broadly classified into a single structure and a tandem structure. A device having a single structure includes one light-emitting unit between a pair of electrodes, and the light-emitting unit preferably has a configuration including one or more light-emitting layers. When white light emission is obtained using two light-emitting layers, light-emitting layers may be selected such that the emission colors of the two light-emitting layers have a complementary color relationship. For example, by making the emission color of a first light-emitting layer and the emission color of a second light-emitting layer have a complementary color relationship, a configuration that emits white light as the entire light-emitting device can be obtained. Further, when white light emission is obtained using three or more light-emitting layers, the entire light-emitting device may be configured to emit white light by combining the emission colors of the three or more light-emitting layers.

[0288] A device having a tandem structure includes two or more light-emitting units between a pair of electrodes, and each light-emitting unit preferably has a configuration including one or more light-emitting layers. In order to obtain white light emission, a configuration may be adopted in which white light emission is obtained by combining light from the light-emitting layers of the plurality of light-emitting units. Note that the configuration for obtaining white light emission is the same as that of the single structure. Note that in a device having a tandem structure, it is preferable to provide a charge generation layer between the plurality of light-emitting units.

[0289] Further, when comparing the above-described white light-emitting device (single structure or tandem structure) with a light-emitting device having an SBS structure, the light-emitting device having an SBS structure can have lower power consumption than the white light-emitting device. When it is desired to keep power consumption low, it is preferable to use a light-emitting device having an SBS structure. On the other hand, a white light-emitting device is preferable because its manufacturing process is simpler than that of a light-emitting device having an SBS structure, so that manufacturing cost can be reduced or manufacturing yield can be increased.

[0290] The display device of this embodiment can reduce the distance between light-emitting devices. Specifically, the distance between light-emitting devices, the distance between EL layers, or the distance between pixel electrodes can be less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1 μm or less, 500 nm or less, 200 nm or less, 100 nm or less, 90 nm or less, 70 nm or less, 50 nm or less, 30 nm or less, 20 nm or less, 15 nm or less, or 10 nm or less. In other words, the distance between the side surface of the first layer 113a and the side surface of the second layer 113b, or the distance between the side surface of the second layer 113b and the side surface of the third layer 113c, has a region of 1 μm or less, preferably a region of 0.5 μm (500 nm) or less, and more preferably a region of 100 nm or less.

[0291] Furthermore, the distance between the light-emitting device and the light-receiving device can also be within the above range. In addition, to suppress leakage between the light-emitting device and the light-receiving device, it is preferable to make the distance between the light-emitting device and the light-receiving device wider than the distance between the light-emitting devices. For example, the distance between the light-emitting device and the light-receiving device can be 8 μm or less, 5 μm or less, or 3 μm or less.

[0292] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical components can also be placed on the outside of the substrate 120. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 120.

[0293] The substrate 120 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, semiconductor, etc. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. If a flexible material is used for the substrate 120, the flexibility of the display device can be increased, and a flexible display can be realized. Alternatively, a polarizing plate may be used as the substrate 120.

[0294] As the substrate 120, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. may be used. Glass with a thickness sufficient to provide flexibility may also be used as the substrate 120.

[0295] Furthermore, when a circular polarizing plate is superimposed on a display device, it is preferable to use a substrate with high optical isotropy for the substrate of the display device. A substrate with high optical isotropy has low birefringence (or a small amount of birefringence).

[0296] For substrates with high optical isotropy, the absolute value of the retardation (phase difference) is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0297] Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0298] Furthermore, when using a film as the substrate, the film may absorb water, potentially causing wrinkles or other shape changes in the display panel. Therefore, it is preferable to use a film with low water absorption for the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferable to use a film with a water absorption rate of 0.1% or less, and even more preferable to use a film with a water absorption rate of 0.01% or less.

[0299] As the resin layer 122, various types of curing adhesives can be used, such as UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0300] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0301] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials or alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes that constitute a display device, and as conductive layers (conductive layers that function as pixel electrodes or common electrodes) in light-emitting devices.

[0302] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0303] Next, we will describe materials that can be used in light-emitting devices and light-receiving devices.

[0304] Of the pixel electrodes and common electrodes, the electrode that extracts light should preferably use a conductive film that transmits visible light and infrared light. Furthermore, it is preferable to use a conductive film that reflects visible light and infrared light on the electrode that does not extract light.

[0305] As materials for forming the pair of electrodes (pixel electrode and common electrode) of the light-emitting device and light-receiving device, metals, alloys, electrically conductive compounds, and mixtures thereof can be used as appropriate. Specifically, examples include indium tin oxide (In-Sn oxide, also called ITO), In-Si-Sn oxide (also called ITSO), indium zinc oxide (In-Zn oxide), In-W-Zn oxide, aluminum alloys such as aluminum, nickel, and lanthanum alloys (Al-Ni-La), and silver alloys such as silver-magnesium alloys and silver-palladium-copper alloys (Ag-Pd-Cu, also written as APC). In addition, metals such as aluminum (Al), magnesium (Mg), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing these in appropriate combinations can also be used. Furthermore, elements belonging to Group 1 or Group 2 of the periodic table not exemplified above (e.g., lithium (Li), cesium (Cs), calcium (Ca), strontium (Sr)), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these in appropriate combinations, graphene, and the like can also be used.

[0306] It is preferable that the light-emitting device and the light-receiving device have a microcavity structure. Therefore, it is preferable that one of the pair of electrodes in the light-emitting device and the light-receiving device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be made to resonate between the two electrodes, thereby strengthening the light emitted from the light-emitting device. By having a microcavity structure in the light-receiving device, the light received by the active layer can be made to resonate between the two electrodes, thereby strengthening the light and improving the detection accuracy of the light-receiving device.

[0307] Furthermore, semi-transmissive / semi-reflective electrodes can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode).

[0308] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the transmittance or reflectance of these electrodes to near-infrared light (light with a wavelength of 750 nm to 1300 nm) satisfies the above numerical range, similar to the transmittance or reflectance of visible light.

[0309] The first layer 113a, the second layer 113b, and the third layer 113c each have an emissive layer. Preferably, the first layer 113a, the second layer 113b, and the third layer 113c each have an emissive layer that emits light of a different color.

[0310] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0311] Examples of luminescent materials include fluorescent materials, phosphorescent materials, thermally activated delayed fluorescence (TADF) materials, and quantum dot materials.

[0312] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0313] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0314] The light-emitting layer may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more of these organic compounds may be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more of these organic compounds may be bipolar materials or TADF materials.

[0315] The light-emitting layer preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. This configuration allows for efficient emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material). By selecting a combination that forms an excitation complex that exhibits emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be obtained efficiently. This configuration simultaneously achieves high efficiency, low-voltage operation, and a long lifespan for the light-emitting device.

[0316] The first layer 113a, the second layer 113b, and the third layer 113c may further include layers other than the light-emitting layer that contain a material with high hole injection properties, a material with high hole transport properties (also referred to as a hole-transporting material), a hole-blocking material, a material with high electron transport properties (also referred to as an electron-transporting material), a material with high electron injection properties, an electron-blocking material, or a bipolar material (a material with high electron transport and hole transport properties, also referred to as a bipolar material).

[0317] The light-emitting device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-emitting device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0318] For example, the first layer 113a, the second layer 113b, and the third layer 113c may each have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. Furthermore, the first layer 113a, the second layer 113b, and the third layer 113c may each have a charge generation layer.

[0319] The fourth layer 114 may have one or more of the following: a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, and an electron injection layer. For example, when conductive layers 111a to 111c function as anodes and the common electrode 115 functions as a cathode, it is preferable that the fourth layer 114 has an electron injection layer.

[0320] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0321] In a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. In a light-receiving device, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer containing a hole-transporting material. As a hole-transporting material, 1 × 10 -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials include π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton), which are materials with high hole transport capabilities.

[0322] In light-emitting devices, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. In light-receiving devices, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer containing an electron-transporting material. As an electron-transporting material, 1 × 10 -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Examples of electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds, which are all highly electron-transporting materials.

[0323] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron-injection properties. Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron-injection properties. Composite materials containing both electron-transporting materials and donor materials (electron-donating materials) can also be used as materials with high electron-injection properties.

[0324] Examples of electron injection layers include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-(quinolinolato)lithium (abbreviated as Liq), 2-(2-pyridyl)phenolate (abbreviated as LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviated as LiPPy), 4-phenyl-2-(2-pyridyl)phenolate (abbreviated as LiPPP), and lithium oxide (LiO2). x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a laminated structure of two or more layers. For example, this laminated structure may consist of lithium fluoride as the first layer and ytterbium as the second layer.

[0325] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0326] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In addition, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0327] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0328] As the charge generation layer, for example, a material applicable to the electron injection layer, such as lithium, can be suitably used. Alternatively, as the charge generation layer, a material applicable to the hole injection layer can be suitably used. Furthermore, the charge generation layer can include a layer containing a hole transport material and an acceptor material (electron-accepting material). Additionally, the charge generation layer can include a layer containing an electron transport material and a donor material. By forming a charge generation layer having such layers, it is possible to suppress the increase in driving voltage when light-emitting units are stacked.

[0329] The fifth layer 113d and the sixth layer 113e each have an active layer. The fifth layer 113d and the sixth layer 113e may have active layers of the same configuration or active layers of different configurations. For example, when the light receiving device has a microcavity structure, light of different wavelengths can be detected by the fifth layer 113d and the sixth layer 113e even if the active layers have the same configuration. Note that a microcavity structure can be formed in the light receiving devices 150d and 150e by changing the thickness of the pixel electrode or the thickness of the optical adjustment layer. In this case, the fifth layer 113d and the sixth layer 113e may have the same configuration in some cases.

[0330] The active layer contains a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In the present embodiment, an example is shown in which an organic semiconductor is used as the semiconductor included in the active layer. The use of an organic semiconductor is preferable because the light emitting layer and the active layer can be formed by the same method (for example, a vacuum vapor deposition method), and manufacturing equipment can be shared.

[0331] Examples of n-type semiconductor materials for the active layer include fullerene (e.g., C 60 fullerene, C 70 fullerene, etc.), electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerene has a shape like a soccer ball, and the shape is energetically stable. For fullerene, both the HOMO level and the LUMO level are deep (low). Since the LUMO level of fullerene is deep, its electron accepting property (acceptor property) is extremely high. Generally, as in benzene, when π-electron conjugation (resonance) spreads in a plane, the electron donating property (donor property) increases, but since fullerene has a spherical shape, its electron accepting property becomes high despite the wide spread of π-electrons. High electron accepting property causes charge separation to occur efficiently at high speed, which is advantageous for a light receiving device. C 60 fullerene, C 70 fullerene both have broad absorption bands in the visible light region, and in particular, C 70 has higher absorption intensity than C60 Compared to [6,6]-Phenyl-C, it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. In addition, [6,6]-Phenyl-C is a suitable fullerene derivative. 71 -butyric acid methyl ester (abbreviation: PC) 70 BM), [6,6]-Phenyl-C 61 -butyric acid methyl ester (abbreviation: PC) 60 BM), 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C 60 Examples include (abbreviated as ICBA).

[0332] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0333] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin(II) phthalocyanine (SnPc), and quinacridone.

[0334] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indrocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0335] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0336] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0337] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0338] The fifth layer 113d and the sixth layer 113e may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, the fifth layer 113d and the sixth layer 113e may have various functional layers that can be used in the first layer 113a, the second layer 113b, and the third layer 113c.

[0339] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0340] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transport materials. In addition, inorganic compounds such as zinc oxide (ZnO) can be used as electron transport materials.

[0341] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0342] Furthermore, the active layer may contain a mixture of three or more materials. For example, to broaden the absorption wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0343] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, CVD, vacuum deposition, PLD, ALD, and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0344] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife coating, slit coating, roll coating, curtain coating, and knife coating.

[0345] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, as well as chemical vapor deposition (CVD). Functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0346] Furthermore, when processing the thin film that constitutes the display device, photolithography or the like can be used. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, lift-off lithography, or the like. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0347] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0348] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0349] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0350] As described above, in the display device of this embodiment, the island-shaped EL layer is formed not using a fine metal mask, but by processing after the EL layer is deposited on one surface, so that the island-shaped EL layer can be formed with a uniform thickness. Furthermore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to achieve until now. Moreover, it is possible to realize a high-definition display device or a display device with a high aperture ratio that has a light detection function and incorporates a light receiving device.

[0351] The first, second, and third layers constituting each color of light-emitting device are formed in separate processes. Therefore, each EL layer can be fabricated with a configuration (material, film thickness, etc.) suitable for each color of light-emitting device. This makes it possible to produce light-emitting devices with excellent characteristics.

[0352] This embodiment can be combined with other embodiments as appropriate.

[0353] (Embodiment 3) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 16 to 18.

[0354] The display device of this embodiment can be a high-resolution display device or a large-screen display device. Therefore, the display device of this embodiment can be used in electronic devices with relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal information terminals, and audio playback devices.

[0355] [Display device 100F] Figure 16 shows a perspective view of the display device 100F, and Figure 17A shows a cross-sectional view of the display device 100F.

[0356] The display device 100F has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 16, substrate 152 is clearly indicated by a dashed line.

[0357] The display device 100F includes a display unit 162, a connection unit 140, a circuit 164, wiring 165, etc. Figure 16 shows an example in which IC 173 and FPC 172 are mounted on the display device 100F. Therefore, the configuration shown in Figure 16 can also be described as a display module having the display device 100F, an IC (integrated circuit), and an FPC.

[0358] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There may be one or more connection portions 140. Figure 16 shows an example in which the connection portion 140 is provided so as to surround all four sides of the display portion. At the connection portion 140, the common electrode of the light-emitting device and the conductive layer are electrically connected, and a potential can be supplied to the common electrode.

[0359] For example, a scan line drive circuit can be used as circuit 164.

[0360] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0361] Figure 16 shows an example in which IC 173 is provided on the substrate 151 using a COG (Chip On Glass) method or COF (Chip On Film) method. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100F and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using a COF method or the like.

[0362] Figure 17A shows an example of a cross-section of the display device 100F when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection unit 140, and a portion of the area including the end are cut.

[0363] The display device 100F shown in Figure 17A includes a transistor 201, a transistor 205, a light receiving device 150d, a light-emitting device 130b that emits green light, and a light-emitting device 130c that emits blue light, etc., between substrates 151 and 152.

[0364] The display device 100F can, for example, apply the pixel layout shown in Figures 2A to 2G, 3A, 3B, and 5A to 5D, as described in Embodiment 1. The light receiving device 150d can be provided in the sub-pixel PS or sub-pixel IRS.

[0365] The light-receiving device 150d has a conductive layer 111d, a conductive layer 112d on the conductive layer 111d, and a conductive layer 126d on the conductive layer 112d. All of the conductive layers 111d, 112d, and 126d can be called pixel electrodes, or only a part of them can be called pixel electrodes.

[0366] The conductive layer 111d is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The edge of conductive layer 112d is located outside the edge of conductive layer 111d. The edges of conductive layer 112d and conductive layer 126d are aligned or approximately aligned. For example, conductive layers that function as reflective electrodes can be used for conductive layers 111d and 112d, and a conductive layer that functions as a transparent electrode can be used for conductive layer 126d.

[0367] The light-emitting device 130b includes a conductive layer 111b, a conductive layer 112b on the conductive layer 111b, and a conductive layer 126b on the conductive layer 112b.

[0368] The light-emitting device 130c has a conductive layer 111c, a conductive layer 112c on the conductive layer 111c, and a conductive layer 126c on the conductive layer 112c.

[0369] The conductive layers 111b, 112b, and 126b in the light-emitting device 130b, and the conductive layers 111c, 112c, and 126c in the light-emitting device 130c are the same as the conductive layers 111d, 112d, and 126d in the light-receiving device 150d, so a detailed explanation is omitted.

[0370] The conductive layers 111b, 111c, and 111d have recesses formed to cover the openings provided in the insulating layer 214. Layer 128 is embedded in these recesses.

[0371] Layer 128 has the function of flattening the recesses of the conductive layers 111b, 111c, and 111d. Conductive layers 112b, 112c, and 112d are provided on conductive layers 111b, 111c, and 111d and on layer 128, and are electrically connected to conductive layers 111b, 111c, and 111d. Therefore, the regions that overlap with the recesses of conductive layers 111b, 111c, and 111d can also be used as light-emitting regions, and the aperture ratio of the pixels can be increased.

[0372] Layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for layer 128 as appropriate. In particular, it is preferable that layer 128 be formed using an insulating material.

[0373] As layer 128, an insulating layer having an organic material can be suitably used. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins can be used as layer 128. Alternatively, a photosensitive resin can be used as layer 128. The photosensitive resin can be a positive-type material or a negative-type material.

[0374] By using a photosensitive resin, layer 128 can be fabricated using only exposure and development processes, reducing the impact on the surfaces of conductive layers 111b, 111c, and 111d due to dry etching or wet etching. Furthermore, by forming layer 128 using a negative-type photosensitive resin, it may be possible to form layer 128 using the same photomask (exposure mask) used to form the openings of the insulating layer 214.

[0375] The top and side surfaces of conductive layer 112d and conductive layer 126d are covered by a fifth layer 113d. The fifth layer 113d has at least an active layer.

[0376] Similarly, the top and side surfaces of conductive layer 112b and conductive layer 126b are covered by the second layer 113b. Furthermore, the top and side surfaces of conductive layer 112c and conductive layer 126c are covered by the third layer 113c. Therefore, the entire region where conductive layers 112b and 112c are provided can be used as the light-emitting region of light-emitting devices 130b and 130c, thereby increasing the aperture ratio of the pixels.

[0377] The sides of the second layer 113b, the third layer 113c, and the fifth layer 113d are covered by insulating layers 125 and 127, respectively. A sacrificial layer 118b is located between the second layer 113b and the insulating layer 125. A sacrificial layer 118c is located between the third layer 113c and the insulating layer 125, and a sacrificial layer 118d is located between the fifth layer 113d and the insulating layer 125. A fourth layer 114 is provided on the second layer 113b, the third layer 113c, the fifth layer 113d, and the insulating layers 125 and 127, and a common electrode 115 is provided on the fourth layer 114. The fourth layer 114 and the common electrode 115 are continuous films provided in common to the light-receiving device and the light-emitting device, respectively. Furthermore, a protective layer 131 is provided on the light-emitting devices 130b and 130c and on the light-receiving device 150d.

[0378] The protective layer 131 and the substrate 152 are bonded together via an adhesive layer 142. For sealing the light-emitting device, a solid sealing structure or a hollow sealing structure can be applied. In Figure 17A, the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 142, demonstrating a solid sealing structure. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), demonstrating a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Furthermore, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0379] In the connection portion 140, a conductive layer 123 is provided on the insulating layer 214. The conductive layer 123 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 111b, 111c, and 111d, a conductive film obtained by processing the same conductive film as conductive layers 112b, 112c, and 112d, and a conductive film obtained by processing the same conductive film as conductive layers 126b, 126c, and 126d. The ends of the conductive layer 123 are covered by a sacrificial layer, an insulating layer 125, and an insulating layer 127. Furthermore, a fourth layer 114 is provided on the conductive layer 123, and a common electrode 115 is provided on the fourth layer 114. The conductive layer 123 and the common electrode 115 are electrically connected via the fourth layer 114. Note that the fourth layer 114 does not necessarily have to be formed in the connection portion 140. In this case, the conductive layer 123 and the common electrode 115 are in direct contact and electrically connected.

[0380] The display device 100F is a top-emission type. The light emitted by the light-emitting device is emitted towards the substrate 152. It is preferable to use a material with high transmittance to visible light for the substrate 152. The pixel electrodes contain a material that reflects visible light, and the counter electrodes (common electrodes 115) contain a material that transmits visible light.

[0381] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 containing the transistor in Embodiment 1.

[0382] Both transistors 201 and 205 are formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0383] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0384] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0385] It is preferable to use inorganic insulating films for insulating layer 211, insulating layer 213, and insulating layer 215. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxide nitride film, silicon oxide film, silicon nitride oxide film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above insulating films may be laminated together.

[0386] An organic insulating film is preferred for the insulating layer 214, which functions as a planarization layer. Examples of materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimidoamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating film and an inorganic insulating film. The outermost layer of the insulating layer 214 preferably functions as an etching protective film. This makes it possible to suppress the formation of depressions in the insulating layer 214 during processing of conductive layers 111b, 112b, or 126b. Alternatively, depressions may be provided in the insulating layer 214 during processing of conductive layers 111b, 112b, or 126b.

[0387] Transistors 201 and 205 have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0388] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0389] Transistors 201 and 205 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0390] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0391] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region. Alternatively, the semiconductor layer of the transistor may have silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0392] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0393] In particular, it is preferable to use an oxide (also written as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc.

[0394] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of such In-M-Zn oxide atomic ratios of metal elements include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "close to it" compositions include a range of ±30% of the desired atomic ratio.

[0395] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0396] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0397] Figures 17B and 17C show other examples of transistor configurations.

[0398] Transistors 209 and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer 231 having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0399] In the transistor 209 shown in Figure 17B, an example is shown where the insulating layer 225 covers the top and sides of the semiconductor layer 231. The conductive layers 222a and 222b are connected to the low-resistance region 231n through openings provided in the insulating layers 225 and 215, respectively. Of the conductive layers 222a and 222b, one functions as the source and the other as the drain.

[0400] On the other hand, in the transistor 210 shown in Figure 17C, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 17C can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 17C, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215.

[0401] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The conductive layer 166 is shown as an example of a laminated structure consisting of a conductive film obtained by processing the same conductive film as conductive layers 111b, 111c, and 111d, a conductive film obtained by processing the same conductive film as conductive layers 112b, 112c, and 112d, and a conductive film obtained by processing the same conductive film as conductive layers 126b, 126c, and 126d. On the upper surface of the connection portion 204, the conductive layer 166 is exposed. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0402] It is preferable to provide a light-shielding layer 117 on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 117 can be provided between adjacent light-emitting devices, at connection points 140, and in circuits 164, etc. Various optical components can be arranged on the outside of the substrate 152. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (diffusion films, etc.), anti-reflective layers, and light-collecting films. Furthermore, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, an impact-absorbing layer, etc., may be arranged on the outside of the substrate 152.

[0403] By providing a protective layer 131 that covers the light-emitting device and the light-receiving device, it is possible to suppress the ingress of impurities such as water into the light-emitting device and the light-receiving device, thereby improving the reliability of the light-emitting device and the light-receiving device.

[0404] Substrates 151 and 152 can each be made of materials that can be used for substrate 120 as exemplified in Embodiment 2. The substrate on the side that extracts light from the light-emitting device should be made of a material that transmits the light. Using flexible materials for substrates 151 and 152 can increase the flexibility of the display device. Alternatively, a polarizing plate may be used as substrate 151 or substrate 152.

[0405] As the adhesive layer 142, a material that can be used for the resin layer 122 exemplified in Embodiment 2 can be used.

[0406] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0407] [Display device 100G] The display device 100G shown in Figure 18A differs from the display device 100F mainly in that it is a bottom-emission type display device that combines a white light-emitting device with a color filter. In the following description of the display device, parts that are the same as those described earlier may be omitted.

[0408] The light emitted by the light-emitting device is projected onto the substrate 151. Light enters the light-receiving device from the substrate 151 side. It is preferable to use a material with high transmittance to visible light for the substrate 151. On the other hand, the light transmittance of the material used for the substrate 152 is not a requirement.

[0409] It is preferable to form a light-shielding layer 117 between the substrate 151 and the transistor 201, and between the substrate 151 and the transistor 205. Figure 18A shows an example in which a light-shielding layer 117 is provided on the substrate 151, an insulating layer 153 is provided on the light-shielding layer 117, and transistors 201, 205, etc. are provided on the insulating layer 153.

[0410] The light-emitting device 130a and the colored layer 132R are superimposed, and the light emitted from the light-emitting device 130a is extracted as red light to the outside of the display device 100G via the red colored layer 132R.

[0411] The light-emitting device 130a includes a conductive layer 111a, a conductive layer 112a on the conductive layer 111a, and a conductive layer 126a on the conductive layer 112a.

[0412] The light-receiving device 150d has a conductive layer 111d, a conductive layer 112d on the conductive layer 111d, and a conductive layer 126d on the conductive layer 112d.

[0413] The conductive layers 111a, 111d, 112a, 112d, 126a, and 126d are made of materials with high transmittance to visible light. It is preferable to use a material that reflects visible light for the common electrode 115.

[0414] The top and side surfaces of conductive layer 112a and conductive layer 126a are covered by the first layer 113a. The side surfaces of the first layer 113a are covered by insulating layers 125 and 127. A sacrificial layer 118a is located between the first layer 113a and the insulating layer 125. A fourth layer 114 is provided on the first layer 113a, the fifth layer 113d, and the insulating layers 125 and 127, and a common electrode 115 is provided on the fourth layer 114. The fourth layer 114 and the common electrode 115 are continuous films provided in common on the light-receiving device and the light-emitting device, respectively. In addition, a protective layer 131 is provided on the light-emitting device 130a and the light-receiving device 150d.

[0415] Each subpixel of a different color can have a light-emitting device that emits white light. In Figure 18A, the first layer 113a is shown as a three-layer structure, specifically a stacked structure consisting of a first light-emitting unit, a charge generation layer, and a second light-emitting unit.

[0416] Furthermore, while Figures 17A and 18A show examples where the upper surface of layer 128 has a flat portion, the shape of layer 128 is not particularly limited. Figures 18B to 18D show modified examples of layer 128.

[0417] As shown in Figures 18B and 18D, the upper surface of layer 128 can be configured to have a shape in which the center and its vicinity are recessed in a cross-sectional view, that is, a shape having a concave curved surface.

[0418] Furthermore, as shown in Figure 18C, the upper surface of layer 128 can be configured to have a shape that bulges in the center and its vicinity when viewed in cross-section, that is, a shape with a convex curved surface.

[0419] Furthermore, the upper surface of layer 128 may have one or both of a convex and a concave surface. Also, the number of convex and concave surfaces on the upper surface of layer 128 is not limited and can be one or more.

[0420] Furthermore, the height of the top surface of layer 128 and the height of the top surface of the conductive layer 111a may be the same or approximately the same, or they may be different from each other. For example, the height of the top surface of layer 128 may be lower or higher than the height of the top surface of the conductive layer 111a.

[0421] Furthermore, Figure 18B can be seen as an example in which layer 128 is housed inside a recess formed in the conductive layer 111a. On the other hand, as shown in Figure 18D, layer 128 may exist outside the recess formed in the conductive layer 111a, that is, the width of the upper surface of layer 128 may be wider than that of the recess.

[0422] This embodiment can be combined with other embodiments as appropriate.

[0423] (Embodiment 4) This embodiment describes a light-emitting device that can be used in a display device according to one aspect of the present invention.

[0424] As shown in Figure 19A, the light-emitting device has an EL layer 786 between a pair of electrodes (lower electrode 772, upper electrode 788). The EL layer 786 can be composed of multiple layers, such as layer 4420, light-emitting layer 4411, and layer 4430. Layer 4420 may include, for example, a layer containing a material with high electron injection properties (electron injection layer) and a layer containing a material with high electron transport properties (electron transport layer). Light-emitting layer 4411 may contain, for example, a light-emitting compound. Layer 4430 may include, for example, a layer containing a material with high hole injection properties (hole injection layer) and a layer containing a material with high hole transport properties (hole transport layer).

[0425] A configuration having a layer 4420, an emissive layer 4411, and a layer 4430 provided between a pair of electrodes can function as a single emissive unit, and in this specification, the configuration shown in Figure 19A is referred to as a single structure.

[0426] Furthermore, Figure 19B shows a modified example of the EL layer 786 of the light-emitting device shown in Figure 19A. Specifically, the light-emitting device shown in Figure 19B includes a layer 4431 on the lower electrode 772, a layer 4432 on layer 4431, a light-emitting layer 4411 on layer 4432, a layer 4421 on the light-emitting layer 4411, a layer 4422 on layer 4421, and an upper electrode 788 on layer 4422. For example, when the lower electrode 772 is the anode and the upper electrode 788 is the cathode, layer 4431 functions as a hole injection layer, layer 4432 functions as a hole transport layer, layer 4421 functions as an electron transport layer, and layer 4422 functions as an electron injection layer. Alternatively, if the lower electrode 772 is used as the cathode and the upper electrode 788 as the anode, layer 4431 functions as an electron injection layer, layer 4432 functions as an electron transport layer, layer 4421 functions as a hole transport layer, and layer 4422 functions as a hole injection layer. With such a layer structure, it is possible to efficiently inject carriers into the light-emitting layer 4411 and increase the efficiency of carrier recombination within the light-emitting layer 4411.

[0427] Furthermore, as shown in Figures 19C and 19D, a configuration in which multiple light-emitting layers (light-emitting layers 4411, 4412, and 4413) are provided between layer 4420 and layer 4430 is also a variation of the single structure.

[0428] Furthermore, as shown in Figures 19E and 19F, a configuration in which multiple light-emitting units (EL layer 786a, EL layer 786b) are connected in series via a charge generation layer 4440 is referred to as a tandem structure in this specification. The tandem structure may also be called a stacked structure. By using a tandem structure, a light-emitting device capable of high-brightness emission can be achieved.

[0429] In Figures 19C and 19D, the light-emitting layers 4411, 4412, and 4413 may be made of light-emitting materials that emit light of the same color, or even the same light-emitting material. For example, light-emitting materials that emit blue light may be used for the light-emitting layers 4411, 4412, and 4413. A color conversion layer may be provided as layer 785 as shown in Figure 19D.

[0430] Furthermore, light-emitting materials that emit light of different colors may be used for light-emitting layers 4411, 4412, and 4413. When the light emitted by light-emitting layers 4411, 4412, and 4413 are complementary colors, white light emission is obtained. A color filter (also called a colored layer) may be provided as layer 785 as shown in Figure 19D. By passing white light through the color filter, light of a desired color can be obtained.

[0431] Furthermore, in Figures 19E and 19F, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of the same color, or they may be made of the same light-emitting material. Alternatively, the light-emitting layer 4411 and the light-emitting layer 4412 may be made of light-emitting materials that emit light of different colors. When the light emitted by the light-emitting layer 4411 and the light emitted by the light-emitting layer 4412 are complementary colors, white light emission is obtained. Figure 19F shows an example in which an additional layer 785 is provided. As layer 785, one or both of a color conversion layer and a color filter (coloring layer) can be used.

[0432] Furthermore, in Figures 19C, 19D, 19E, and 19F, as shown in Figure 19B, layer 4420 and layer 4430 may be a laminated structure consisting of two or more layers.

[0433] A structure in which each light-emitting device produces a different light-emitting color (for example, blue (B), green (G), and red (R)) is sometimes called an SBS (Side By Side) structure.

[0434] The light-emitting color of the light-emitting device can be red, green, blue, cyan, magenta, yellow, or white, depending on the material that makes up the EL layer 786. Furthermore, the color purity can be further enhanced by adding a microcavity structure to the light-emitting device.

[0435] A light-emitting device that emits white light preferably has a configuration that includes two or more types of light-emitting materials in its light-emitting layer. To obtain white light emission, it is sufficient to select light-emitting materials such that the light emitted by each of the two or more materials is complementary in color. For example, by making the light-emitting color of the first light-emitting layer and the light-emitting color of the second light-emitting layer complementary, a light-emitting device that emits white light as a whole can be obtained. The same applies to light-emitting devices that have three or more light-emitting layers.

[0436] The light-emitting layer preferably contains two or more light-emitting materials that emit light such as R (red), G (green), B (blue), Y (yellow), and O (orange). Alternatively, it is preferable to have two or more light-emitting materials, and for each light-emitting material to emit light that contains spectral components of two or more colors from R, G, and B.

[0437] This embodiment can be combined with other embodiments as appropriate.

[0438] (Embodiment 5) This embodiment describes metal oxides (also called oxide semiconductors) that can be used in the OS transistor described in the above embodiment.

[0439] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0440] Furthermore, metal oxides can be formed by methods such as sputtering, chemical vapor deposition (CVD) methods including metal-organic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

[0441] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0442] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0443] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peak clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0444] Furthermore, the crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. However, in the diffraction pattern of an IGZO film deposited at room temperature, a spot-like pattern is observed instead of a halo. Therefore, it is presumed that an IGZO film deposited at room temperature is in an intermediate state, neither crystalline nor amorphous, and cannot be concluded to be in an amorphous state.

[0445] <<Oxide semiconductor structure>> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Non-single-crystal oxide semiconductors also include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0446] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0447] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0448] Each of the multiple crystalline regions described above is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single minute crystal, the maximum diameter of that crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0449] Furthermore, in In-M-Zn oxides (where element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer). Note that indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. Also, the In layer may contain element M. Also, the In layer may contain Zn. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0450] When structural analysis of a CAAC-OS film is performed using an XRD instrument, for example, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the c-axis orientation peak (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0451] Furthermore, for example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0452] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to the fact that the arrangement of oxygen atoms is not dense in the ab-plane direction, and the bond distance between atoms changes due to the substitution of metal atoms.

[0453] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more than In oxide.

[0454] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities and the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0455] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS or amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or larger), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0456] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0457] <<Oxide Semiconductor Composition>> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0458] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0459] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0460] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in CAC-OS in In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of CAC-OS. The second region is the region where [Ga] is greater than the [Ga] in the composition of CAC-OS. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0461] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0462] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0463] Furthermore, CAC-OS in In-Ga-Zn oxide refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like manner, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which metal elements are unevenly distributed.

[0464] CAC-OS can be formed, for example, by sputtering under conditions where the substrate is not heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the film-forming gas. Furthermore, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be as low as possible. For example, it is preferable that the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0465] Furthermore, for example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0466] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0467] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0468] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0469] Furthermore, transistors using CAC-OS offer high reliability. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0470] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0471] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0472] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0473] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be lowered to reduce the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0474] Furthermore, oxide semiconductor films that are highly intrinsic or substantially highly intrinsic may have a low trap level density due to their low defect level density.

[0475] Furthermore, charges trapped in the trap levels of oxide semiconductors can take a long time to disappear, sometimes behaving like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high trap level density may exhibit unstable electrical properties.

[0476] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of the transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0477] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0478] In oxide semiconductors, the presence of silicon or carbon, which are Group 14 elements, leads to the formation of defect levels in the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0479] Furthermore, if an oxide semiconductor contains alkali metals or alkaline earth metals, it may form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0480] Furthermore, in oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. As a result, the electrical properties of the transistor may become unstable. For this reason, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻⁶. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0481] Furthermore, hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. Hydrogen can then fill these vacancies, generating electrons, which act as carriers. Additionally, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, in oxide semiconductors, the hydrogen concentration obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0482] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0483] This embodiment can be combined with other embodiments as appropriate.

[0484] (Embodiment 6) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 20 to 22.

[0485] The electronic device of this embodiment has a display device according to one aspect of the present invention in its display unit. The display device according to one aspect of the present invention is easily made high-definition and high-resolution. Therefore, it can be used in the display units of various electronic devices.

[0486] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0487] Furthermore, since the display device according to one aspect of the present invention can increase resolution, it can be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), as well as wearable devices that can be worn on the head, such as head-mounted displays for VR (Virtual Reality), glasses-type devices for AR (Augmented Reality), and devices for MR (Mixed Reality).

[0488] A display device according to one aspect of the present invention preferably has an extremely high resolution such as HD (1280 x 720 pixels), FHD (1920 x 1080 pixels), WQHD (2560 x 1440 pixels), WQXGA (2560 x 1600 pixels), 4K (3840 x 2160 pixels), or 8K (7680 x 4320 pixels). In particular, a resolution of 4K, 8K, or higher is preferred. Furthermore, the pixel density (resolution) of the display device according to one aspect of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device that has either high resolution or high detail, or both, it becomes possible to further enhance the sense of presence and depth in personal electronic devices such as portable or home-use devices. Furthermore, there are no particular limitations on the screen ratio (aspect ratio) of the display device according to one embodiment of the present invention. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0489] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0490] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0491] The electronic device 6500 shown in Figure 20A is a portable information terminal that can be used as a smartphone.

[0492] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The display unit 6502 has a touch panel function.

[0493] A display device according to one aspect of the present invention can be applied to the display unit 6502.

[0494] Figure 20B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0495] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0496] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0497] In the area outside the display unit 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0498] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0499] Figure 21A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0500] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0501] The television device 7100 shown in Figure 21A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0502] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0503] Figure 21B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0504] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0505] Figures 21C and 21D show examples of digital signage.

[0506] The digital signage 7300 shown in Figure 21C includes a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switches), connection terminals, various sensors, a microphone, etc.

[0507] Figure 21D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0508] In Figures 21C and 21D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0509] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0510] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0511] Furthermore, as shown in Figures 21C and 21D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0512] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows an unspecified number of users to participate in and enjoy the game simultaneously.

[0513] The electronic equipment shown in Figures 22A to 22F includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0514] In Figures 22A to 22F, a display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0515] The electronic devices shown in Figures 22A to 22F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0516] Details of the electronic equipment shown in Figures 22A to 22F will be explained below.

[0517] Figure 22A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 22A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the subject of an email or SNS message, the sender's name, date and time, time, battery level, signal strength, etc. Alternatively, icons 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0518] Figure 22B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0519] Figure 22C is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0520] Figures 22D to 22F are perspective views showing a foldable portable information terminal 9201. Figure 22D shows the portable information terminal 9201 in an unfolded state, Figure 22F shows it in a folded state, and Figure 22E shows a perspective view of the state in between, transitioning from one of Figures 22D or 22F to the other. The portable information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the portable information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0521] This embodiment can be combined with other embodiments as appropriate. [Examples]

[0522] In this embodiment, we will explain the results of inferring the location information of a non-contact object using a display device according to one aspect of the present invention and a machine learning model utilizing AI.

[0523] In this embodiment, first, an image of a non-contact object was acquired using a display device. Next, a machine learning model was trained using a dataset of this image and its location information. After that, the image was input into the trained model, and the inference result of the object's location information by the trained model was evaluated.

[0524] [Image acquisition] Figure 23A is a schematic diagram of the evaluation system, showing the positional relationship between the display device and the light source used for evaluation.

[0525] In this embodiment, the evaluation was performed using a display device 55 having sub-pixels R, G, B, and IRS in its pixels.

[0526] Sub-pixel R has a light-emitting device that emits red light. Sub-pixel G has a light-emitting device that emits green light. Sub-pixel B has a light-emitting device that emits blue light. Organic EL devices were used as each light-emitting device.

[0527] The sub-pixel IRS has a photodetector that detects infrared light. An organic photodetector was used as the photodetector.

[0528] An IR-LED emitting infrared light with a wavelength of 880 nm was used as the light source and driven at 0.3 A. The distance between the IR-LED light source and the display device 55 was approximately 3 cm.

[0529] In this embodiment, the reflected light from the object 50, which is infrared light emitted by the IR-LED light source, is detected by the light-receiving device of the sub-pixel IRS.

[0530] Three types of objects were used as the test subjects (50): bare fingers, a gray glove, and glossy paper (total light reflectance of 80%). The gray glove was made of conductive fibers mixed with copper sulfide, and could be detected by a capacitive touch sensor.

[0531] This evaluation was conducted by creating a 1cm square opening (which can also be called a window) in a black board 52 (total light reflectance of 5%) and exposing the object 50 through this opening. This allows for obtaining imaging data that includes the object's position information and information on the light reflected by the object. Furthermore, this imaging data can be considered equivalent to a cropped image of the image captured by the display device, which is used to estimate the object's position.

[0532] The coordinates of object 50 in three-dimensional space were set to 50 different values. The horizontal position was set to 25 conditions (the product of 5 conditions in the X direction: -2cm, -1cm, 0cm (reference point), 1cm, 2cm and 5 conditions in the Y direction: -2cm, -1cm, 0cm (reference point), 1cm, 2cm). The horizontal position of object 50 was adjusted by moving a stage that could move in the X and Y directions at 1cm intervals. The vertical position was set to 2 conditions: 1cm or 5cm away from the display device.

[0533] Figures 23B to 23D show examples of images actually captured of the object 50 by the display device 55. Figure 23B is the result of capturing a bare finger at the position (x,y,z)=(0cm,0cm,1cm), Figure 23C is the result of capturing a glossy paper at the position (x,y,z)=(0cm,0cm,1cm), and Figure 23D is the result of capturing a glossy paper at the position (x,y,z)=(0cm,0cm,5cm).

[0534] By comparing Figure 23B and Figure 23C, it was confirmed that even if the position of object 50 is the same, differences in imaging results occur depending on the type of object. Furthermore, by comparing Figure 23C and Figure 23D, it was confirmed that even if the type of object 50 is the same, differences in imaging results occur depending on the position.

[0535] In this embodiment, as described above, 15,000 images of the object 50 captured by the display device 55 were prepared.

[0536] [Training machine learning models] Next, a machine learning model using AI was trained using a dataset of images of the object 50 captured by the display device 55, along with location information (x, y, z), as training data.

[0537] Specifically, the machine learning model was trained by providing image data as input data (example problems) and location data as output data (answers).

[0538] Two machine learning models were used: AlexNet and MobileNet, both of which utilize convolutional neural networks (CNNs). MobileNet is a lighter model with fewer parameters than AlexNet.

[0539] Of the 15,000 images acquired, 14,250 were used for training, and the remaining 750 were used to evaluate the trained model.

[0540] Each image data was resized to 100 pixels x 100 pixels, then converted into a 100 x 100 array, and input into the machine learning model.

[0541] In this example, a regression model was created that estimates the values ​​of positional information (x, y, z) by inputting image data.

[0542] [Evaluation of machine learning models] First, image data was input into a pre-trained AlexNet model, and positional information (x, y, z) was inferred. An example of the inference results is shown in Table 1.

[0543] [Table 1]

[0544] As shown in Table 1, it was found that the position of an object can be inferred from the image with high accuracy, regardless of the difference in the object.

[0545] Next, image data was input into a pre-trained model using MobileNet, and location information (x, y, z) was inferred.

[0546] Table 2 shows the number of parameters for pre-trained models using AlexNet and MobileNet, and the average error of the inference results for 750 images.

[0547] [Table 2]

[0548] Regardless of the difference in the number of parameters, both AlexNet and MobileNet were found to be able to infer the position of objects from images with high accuracy.

[0549] The results of this embodiment show that by using a display device according to one aspect of the present invention to image a non-contact object and inputting the captured image data into a machine learning model, the object's position information can be inferred. This allows for the detection of an object even if it is not in contact with the display device. Therefore, it is suggested that screen operations such as swiping and scrolling can be performed non-contact. [Explanation of Symbols]

[0550] CL: Wiring, IR-LED: Light source, IR: Sub-pixel, IRS: Sub-pixel, M11: Transistor, M12: Transistor, M13: Transistor, M14: Transistor, M15: Transistor, NN: Neural network, PS: Sub-pixel, RS: Wiring, SE: Wiring, SW: Wiring, TX: Wiring, VCP: Wiring, VPI: Wiring, VRS: Wiring, WX: Wiring, 10: Electronic equipment, 11: Processing unit, 12: Display unit, 13: Memory unit, 15: Image data, 17: Image, 19: Position information, 31B: Light, 31G: Light, 31IR: Infrared light, 31R: Light, 32G: Reflected light, 32IR :Reflected light, 50:Object, 52:Blackboard, 55:Display device, 100A:Display device, 100B:Display device, 100C:Display device, 100D:Display device, 100E:Display device, 100F:Display device, 100G:Display device, 100:Display device, 101:Layer containing transistor, 102:Substrate, 103:Housing, 104:Light source, 105:Protective member, 106:Substrate, 108:Object, 109a:Pixel, 109b:Pixel, 110a:Sub-pixel, 110b:Sub-pixel, 110c:Sub-pixel, 110d:Sub-pixel, 110e:Sub-pixel, 110:Pixel, 111a:Conductive layer, 111b:Conductive Electrode layer, 111c: conductive layer, 111d: conductive layer, 111e: conductive layer, 112a: conductive layer, 112b: conductive layer, 112c: conductive layer, 112d: conductive layer, 113a: first layer, 113b: second layer, 113c: third layer, 113d: fifth layer, 113e: sixth layer, 114: fourth layer, 115: common electrode, 117: light shielding layer, 118a: sacrificial layer, 118b: sacrificial layer, 118c: sacrificial layer, 118d: sacrificial layer, 119a: sacrificial layer, 119b: sacrificial layer, 120: substrate, 121: insulating layer, 122: resin layer, 123: conductive layer, 125: insulating layer, 126a: conductive layer, 126b: Conductive layer, 126c: Conductive layer, 126d: Conductive layer, 127: Insulating layer, 128: Layer, 130a: Light-emitting device, 130B: Light-emitting device, 130b: Light-emitting device, 130c: Light-emitting device, 130G: Light-emitting device, 130IR: Light-emitting device, 130R: Light-emitting device, 131: Protective layer, 132R: Coloring layer, 134: Gap, 139: Region, 140: Connection part, 142: Adhesive layer, 150d: Light-receiving device, 150e: Light-receiving device, 150IRS: Light-receiving device, 150PS: Light-receiving device, 151: Substrate, 152: Substrate, 153: Insulating layer, 162: Display part,164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 180A: Pixel, 180B: Pixel, 180C: Pixel, 201: Transistor, 204: Connection, 205: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 218: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 231i: Channel formation region, 231n: Low resistance region, 231: Semiconductor Body layer, 242: Connection layer, 772: Lower electrode, 785: Layer, 786a: EL layer, 786b: EL layer, 786: EL layer, 788: Upper electrode, 4411: Light-emitting layer, 4412: Light-emitting layer, 4413: Light-emitting layer, 4420: Layer, 4421: Layer, 4422: Layer, 4430: Layer, 4431: Layer, 4432: Layer, 4440: Charge generation layer, 6500: Electronic device, 6501: Housing, 6502: Display unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 65 10: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Enclosure, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301 : Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Portable information terminal, 9102: Portable information terminal, 9200: Portable information terminal, 9201: Portable information terminal,

Claims

1. An electronic device having a non-contact sensor function, It has a display unit, a processing unit, and a storage unit. The display unit has a display device having a pixel circuit including a light-emitting device, a first light-receiving device, a second light-receiving device, a capacitor, first to fifth transistors, and first to third wiring. The display unit has the function of displaying an image using the light-emitting device and the function of capturing an image using the first light-receiving device and the second light-receiving device. The memory unit has a machine learning model using a neural network, The processing unit has a function to infer the position information (x, y, z) of an object that is not in contact with the electronic device from the image data captured by the display unit using the machine learning model. The aforementioned imaging data is a photograph of the aforementioned object, The source and drain of the first transistor are electrically connected to the first electrode of the capacitor, the source and drain of the second transistor, and the gate of the third transistor. The source and drain of the second transistor are electrically connected to the first wiring. One of the source and drain of the third transistor is electrically connected to one of the source and drain of the fourth transistor. The source and drain of the third transistor are electrically connected to the second wiring. The source and the other drain of the fourth transistor are electrically connected to the third wiring. The source and drain of the first transistor are electrically connected to the first light-receiving device and to one of the source and drain of the fifth transistor. The source and the other drain of the fifth transistor are electrically connected to the second photodetector. Each of the first transistor, the second transistor, and the fifth transistor has an oxide semiconductor in its channel formation region. The third transistor has silicon in the channel formation region, An electronic device in which the area of ​​the light-receiving region of the first light-receiving device is smaller than the area of ​​the light-receiving region of the second light-receiving device.

2. An electronic device having a non-contact sensor, It has a display unit, a processing unit, and a storage unit. The display unit has a display device having a first pixel, The first pixel has a pixel circuit including a first light-emitting device, a first light-receiving device, a second light-receiving device, a capacitor, first to fifth transistors, and first to third wiring. The wavelength range of light detected by the first light-receiving device includes the maximum peak wavelength of the emission spectrum of the first light-emitting device. The second light-receiving device has a function for detecting infrared light, The display unit has the function of displaying an image using the first light-emitting device, and the function of capturing an image using either or both of the first light-receiving device and the second light-receiving device. The memory unit has a machine learning model using a neural network, The processing unit has a function to infer the position information (x, y, z) of an object that is not in contact with the electronic device from the image data captured by the display unit using the machine learning model. The aforementioned imaging data is a photograph of the aforementioned object, The source and drain of the first transistor are electrically connected to the first electrode of the capacitor, the source and drain of the second transistor, and the gate of the third transistor. The source and drain of the second transistor are electrically connected to the first wiring. One of the source and drain of the third transistor is electrically connected to one of the source and drain of the fourth transistor. The source and drain of the third transistor are electrically connected to the second wiring. The source and the other drain of the fourth transistor are electrically connected to the third wiring. The source and drain of the first transistor are electrically connected to the first light-receiving device and to one of the source and drain of the fifth transistor. The source and the other drain of the fifth transistor are electrically connected to the second photodetector. Each of the first transistor, the second transistor, and the fifth transistor has an oxide semiconductor in its channel formation region. The third transistor has silicon in the channel formation region, An electronic device in which the area of ​​the light-receiving region of the first light-receiving device is smaller than the area of ​​the light-receiving region of the second light-receiving device.

3. In claim 2, The display device has a second pixel, The second pixel is an electronic device having the first light-emitting device, the first light-receiving device, and a sensor device.

4. In claim 3, The electronic device is an electronic device having the function of measuring at least one of the following using the sensor device: force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, magnetism, temperature, chemical substance, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, physical condition, pulse, body temperature, and blood oxygen concentration.

5. In claim 2, The display device has a second pixel, The second pixel has the first light-emitting device, the fourth light-emitting device, and the first light-receiving device. The fourth light-emitting device is an electronic device having the function of emitting infrared light.

6. In claim 5, The fourth light-emitting device is an electronic device that emits light to the outside of the electronic device via the display device.

Images