Semiconductor laser device

Abstract

This semiconductor laser device comprises: at least one laser element that emits a laser beam; a housing part that houses thereinside the at least one laser element; a gas supply part that supplies gas from outside the housing part; and a gas discharge part that discharges the gas inside the housing part to the outside of the housing part. The gas supply part has at least one first intake port through which the gas is supplied from the lower side in the vertical direction toward a space on the laser beam emission side in the periphery of the at least one laser element. The gas discharge part has at least one first discharge port disposed at a position facing the at least one first intake port in the vertical direction.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor laser device.

Background Art

[0002] In recent years, laser devices have been used for processing various products, and improvement in processing quality is required. This type of laser device is capable of emitting high-power laser light and includes a semiconductor laser element as a light source.

[0003] It is known that in a laser device, due to laser oscillation of the semiconductor laser element, contaminants adhere to the light-emitting end face of the laser and deposit as deposits. Examples of the contaminants include compounds having silicon and oxygen contained in the atmosphere as a skeleton, more specifically, siloxane, which is a compound having Si-O-Si bonds. Deposition of contaminant-derived deposits (hereinafter simply referred to as "deposits") on the emission end face of a semiconductor laser element causes deterioration of the optical characteristics of laser light, and consequently degradation of output characteristics (degradation of reliability) of the laser device. The deposition amount of deposits increases as the operating time of the laser device becomes longer, so the optical characteristics of laser light deteriorate over time.

[0004] Patent Documents 1 to 3 propose techniques for improving the above-mentioned problem of deposits. In particular, Patent Document 3 discloses that a gas is blown onto the laser light emission end face of a semiconductor laser element to suppress adhesion of contaminants and consequently deposition of deposits.

Prior Art Literature

Patent Literature

[0005]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of Invention

[0006] A semiconductor laser apparatus relating to one aspect of this disclosure, A laser element that emits laser light, A housing section that houses at least one laser element inside, A gas supply unit that supplies gas from outside the aforementioned housing unit, A gas exhaust unit that exhausts the gas inside the containment to the outside of the containment, Equipped with, The gas supply unit has at least one first intake port that supplies gas from the vertically downward side toward the space around the at least one laser element on the laser light emission side, The gas exhaust section has at least one first exhaust port positioned in the vertical direction opposite to the at least one first intake port, The at least one laser element comprises a plurality of such laser elements, The aforementioned at least one first air intake port comprises a plurality of first air intake ports, The at least one first exhaust port comprises a plurality of first exhaust ports, The plurality of first intake ports and the plurality of first exhaust ports are provided corresponding to the plurality of laser elements. The gas supply unit has an intake-side hollow body located vertically below the housing unit, The at least one first intake port is located between the intake-side hollow body and the housing portion. The gas exhaust section has an exhaust-side hollow body located vertically above the housing section. The at least one first exhaust port is located between the housing and the exhaust-side hollow body. . [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a perspective view of a semiconductor laser device according to the first embodiment, showing the inside of the semiconductor laser device through a transparent view. [Figure 2] Figure 2 is a schematic side view showing the inside of a semiconductor laser device according to the first embodiment. [Figure 3] Figure 3 is a schematic side view showing the inside of a semiconductor laser device according to the second embodiment. [Figure 4] Figure 4 is a schematic side view showing the inside of a semiconductor laser device according to the third embodiment. [Figure 5] FIG. 5 is a schematic side view showing the inside of a semiconductor laser device according to a fourth embodiment. [Figure 6] FIG. 6 is a schematic side view showing the inside of a semiconductor laser device according to a fifth embodiment. [Figure 7] FIG. 7 is a schematic plan view showing the inside of the semiconductor laser device according to the fifth embodiment. [Figure 8] FIG. 8 is a schematic side view showing the inside of a semiconductor laser device according to a sixth embodiment. [Figure 9] FIG. 9 is a schematic side view showing the inside of a semiconductor laser device according to Modification 1. [Figure 10] FIG. 10 is a schematic side view showing the inside of a semiconductor laser device according to Modification 2. [Figure 11] FIG. 11 is a diagram showing fluid analysis results, which is a graph showing the position dependency of the volume fraction of the blown gas. [Figure 12] FIG. 12 is a graph showing the relationship among the volume fraction of the blown gas, the position of the blowing port, and the gas flow rate. MODE FOR CARRYING OUT THE INVENTION

[0008] (Background) Hereinafter, the background that led to the present disclosure will be described in detail. As described above, in order to improve the problem of deposits, Patent Document 3 discloses that gas is blown onto the laser light emission end face of a semiconductor laser element to suppress the deposition of deposits.

[0009] However, in the space on the laser light emission side (hereinafter referred to as "laser light emission side space"), an updraft is generated accompanying heat generation of the semiconductor laser element caused by laser oscillation. The blown gas is obstructed by the updraft, and there is a risk that a desired suppression effect cannot be exhibited. Therefore, a certain amount of blowing is required to suppress the deposition of deposits.

[0010] On the other hand, if the amount of gas blown is large, vibrations are induced in the semiconductor laser element and the optical components that are integrated with the semiconductor laser element as a module. Since the semiconductor laser element and the optical components are fixed together with adhesive or the like with a dimensional accuracy on the order of micrometers, if gas is blown strongly, their relative positions will shift from their proper positions. As a result, minute vibration components caused by the vibration of the optical components are introduced into the characteristics of the laser light emitted from the semiconductor laser element, and the optical properties of the laser light change.

[0011] Furthermore, the laser device described in Patent Document 3 does not consider the positional relationship between the exhaust port and the injection port of the blown gas. In the laser device described in Patent Document 3, the blown gas cannot smoothly exhaust contaminants to the outside of the laser device, and the arrangement makes it easy for gas to accumulate inside the laser device. This gas accumulation makes it highly likely that deposits will accumulate on the semiconductor laser element and other optical components inside the laser device.

[0012] The inventors conducted a fluid analysis on the effect of blowing dry gas onto a semiconductor laser element having a multi-emitter structure. This fluid analysis was performed using a semiconductor laser device model in which a blow nozzle is provided above the center of the laser beam emission side space of the semiconductor laser element. As a result, it was found that the gas diffuses from the blow nozzle, and the volume distribution of the gas in the laser beam emission side space of the semiconductor laser element decreases as it moves away from the center of the emission end face.

[0013] Figure 11 is a graph showing the fluid analysis results, illustrating the position dependence of the volume fraction of the injected gas. The vertical axis of Figure 11 represents the volume fraction of the injected gas, and the horizontal axis represents the position of the emitter in the semiconductor laser element in the alignment direction. The center position refers to the center position of the laser beam emission end face of the semiconductor laser element.

[0014] As shown in Figure 11, the volume fraction of gas decreased with increasing distance from the center, and the effect of blown gas was relatively small at the edges. Furthermore, it was found that the distribution of volume fraction relative to the center position was asymmetrical depending on the position of the exhaust port of the laser device.

[0015] From these results, the inventors concluded that the volume fraction of the sprayed gas is affected by the height of the nozzle (i.e., the distance between the laser beam emission end face and the nozzle), the gas flow rate, and the upward airflow caused by the heat generated by the semiconductor laser element.

[0016] The inventors systematically analyzed the relationship between the volume fraction of the sprayed gas, the height of the nozzle, the gas flow rate, and the upward airflow caused by the heat generated by the semiconductor laser element, and obtained the results shown in Figure 12. Figure 12 is a graph showing the relationship between the volume fraction of the sprayed gas, the position of the nozzle, and the gas flow rate. In Figure 12, for three levels of gas flow rate, the volume fraction relative to the nozzle position is plotted with the nozzle position (height from the laser beam emission end face) on the horizontal axis and the volume fraction of the sprayed gas on the vertical axis. In Figure 12, the analysis results are shown in order of increasing gas flow rate using dashed lines L1, broken lines L2, and solid lines L3.

[0017] Figure 12 shows that the smaller the gas flow rate, the smaller the volume fraction. This is thought to be because the gas flow of the sprayed gas is pushed over by the updraft, making it difficult for it to reach the space on the laser beam emission side. Furthermore, considering that a volume fraction of 60% or more is a guideline for preventing deposit accumulation, it was found that a correspondingly large flow rate is necessary. In addition, it was found that in order to achieve a volume fraction of 60% or more, it is necessary to increase the gas flow rate while positioning the spray nozzle within a certain area.

[0018] On the other hand, when the gas is blown at a flow rate that can achieve a volume fraction of 60% or more, the optical properties of the laser light described above fluctuate. From this, the inventors found that it is important to control the flow rate of the blown gas while taking into account the fluctuations in the optical properties of the laser light, rather than simply increasing the flow rate of the blown gas.

[0019] In light of the above, the inventors found that the following (A) and (B) are effective in preventing the deposition of deposits on the laser beam emission end face of a semiconductor laser element. (A) The gas flow of the sprayed gas is not obstructed by the rising airflow caused by the heat generated by the laser element. (B) The gas flow is straightened so that it flows smoothly from the nozzle to the exhaust port.

[0020] This disclosure aims to provide a highly reliable semiconductor laser device that can suppress the deposition of contaminant-derived deposits without degrading the optical properties of the laser light.

[0021] The embodiments and modifications of this disclosure will be described below with reference to the drawings. Each embodiment and modification described below is merely a specific example of this disclosure. Therefore, the numerical values, shapes, materials, components, and their arrangement and connection configurations shown in the embodiments and modifications below are examples and are not intended to limit this disclosure. Furthermore, the figures are schematic and not necessarily strictly accurate. Therefore, the scale and other aspects in the figures do not necessarily match. In the figures, substantially identical components are denoted by the same reference numerals, and redundant explanations are omitted or simplified.

[0022] This specification uses a right-handed coordinate system in which the vertically upward direction is the positive Z-axis direction and the laser beam emission direction is the positive X-axis direction.

[0023] (First Embodiment) Figure 1 is a perspective view of the semiconductor laser apparatus 100 according to the first embodiment, showing the inside of the semiconductor laser apparatus 100 as if seen through. Figure 2 is a schematic side view showing the inside of the semiconductor laser apparatus 100. The thick black arrows in Figure 2 indicate the upward airflow due to the heat generated by each element and component, and the white arrows indicate the flow of the supply gas or exhaust gas. In the following description, the upward airflow due to the heat generated by each element and component may be simply referred to as "upward airflow".

[0024] The semiconductor laser apparatus 100 is, for example, an external resonant type laser processing apparatus that synthesizes multiple laser beams 1 and outputs them externally. The semiconductor laser apparatus 100 includes a housing section 110, a laser module 101, optical components 104, a gas supply section 120, and a gas exhaust section 130.

[0025] The housing 110 is a hollow body that houses the laser element 102 and the optical component 104, and is, for example, a housing. The internal space of the housing 110 is surrounded by four sides, including a side 111 on the positive Y-axis side that is aligned with the ZX plane (a vertical plane along the direction of propagation of the laser beam 1), a top surface 112, and a bottom surface 113. A mounting substrate on which the laser element 102 and the optical component 104 are mounted is placed on the side 111.

[0026] As will be described in detail later, the bottom surface 113 is provided with a first air intake port 121 and a second air intake port 122, and the top surface 112 is provided with a first exhaust port 131 and a second exhaust port 132. The semiconductor laser device 100 is used in a configuration where the line connecting the opposing air intake ports and exhaust ports is aligned along the Z-axis direction.

[0027] The internal space of the containment section 110 is filled with, for example, air, which contains at least one of oxygen, hydrogen, nitrogen, argon, or halogen gases. Alternatively, the internal space may be filled with dry air from which moisture has been removed.

[0028] The laser module 101 includes a semiconductor laser element (hereinafter sometimes simply referred to as "laser element") 102, and an internal optical component 103, etc.

[0029] The laser element 102 is, for example, a semiconductor laser array in which multiple emitters are formed. Laser light 1 is emitted from each emitter. In this embodiment, the laser element 102 is a nitride-based semiconductor laser element and emits laser light in the wavelength band of 500 nm or less (blue to ultraviolet band).

[0030] The module-internal optical component 103 is positioned on the laser beam 1 emission side of the laser element 102 and is connected to the laser element 102 via blocks or adhesives not shown. The module-internal optical component 103 is an optical component having at least one of the following functions: collimating the laser beam 1 to make it parallel, rotating the cross-sectional shape of the laser beam 1 in a plane perpendicular to the propagation direction of the laser beam 1, and separating the laser beam. The module-internal optical component 103 is, for example, a beam twister unit composed of multiple lenses.

[0031] Although not shown in the diagram, the laser module 101 also includes a base material on which the laser element 102 is mounted, multiple electrodes for supplying current to the semiconductor laser element 102, and a cooling block for cooling the laser element 102.

[0032] Optical component 104 is a component that is incident on when multiple laser beams 1 emitted from the laser module 101 are emitted to the outside of the semiconductor laser device 100. Optical component 104 is a component that has a high energy density and is an external resonant mirror, for example. The external resonant mirror is a component to which the laser beams 1, after being focused by the diffraction grating, are incident. Although only optical component 104 is shown as an optical component in Figures 1 and 2, in the semiconductor laser device 100, other optical components may be placed upstream of optical component 104 in the direction of propagation of the laser beams 1. For example, the other optical component may be a diffraction grating, for example.

[0033] The gas supply unit 120 has a first intake port 121 and a second intake port 122, and ejects gas vertically upward (positive Z-axis direction) toward a specific part inside the housing unit 110. A gas supply pump is connected to the first intake port 121 and the second intake port 122, for example, via piping, and the gas delivered from the gas supply pump is supplied to the inside of the housing unit 110 through the first intake port 121 and the second intake port 122.

[0034] The supplied gas (hereinafter sometimes referred to as "supply gas") is, for example, dry air from which moisture has been removed from the atmosphere, i.e., a gas containing nitrogen and oxygen. The supply gas may also contain at least one of the following in addition to oxygen: nitrogen, hydrogen, helium, argon, halogen gases, and halogen compound gases.

[0035] In this embodiment, two first air intake ports 121 are arranged on the bottom surface 113 of the housing 110, corresponding to the laser element 102 and the module-internal optical component 103, respectively. Specifically, the first air intake ports 121 are partially provided on the bottom surface 113 of the housing 110 in the vertically lower regions of the laser light emission side space of the laser element 102 and the laser light emission side space of the module-internal optical component 103. Therefore, gas is supplied from the vertically lower side toward the laser light emission side space of the laser element 102 and the laser light emission side space of the module-internal optical component 103. Note that "partially provided" means that the air intake ports are provided as holes with a relatively small area. In the following description, the laser light emission side space may also be simply referred to as the "emission side space".

[0036] In this embodiment, two second air intake ports 122 are arranged on the bottom surface 113 of the housing 110, corresponding to the optical component 104. Specifically, they are partially provided on the bottom surface 113 of the housing 110 in the vertically lower regions of the laser light incident side space and the laser light emission side space of the optical component 104. Therefore, gas is supplied from the vertically lower side toward the laser light incident side space and the laser light emission side space of the optical component 104. In the following description, the laser light incident side space may also be simply referred to as the "incident side space".

[0037] The gas exhaust section 130 has a first exhaust port 131 and a second exhaust port 132, and exhausts the gas inside the containment section 110. For example, piping is connected to the first exhaust port 131 and the second exhaust port 132. Alternatively, a gas exhaust pump may be connected to the piping to forcibly draw up the gas inside the containment section 110.

[0038] In this embodiment, two first exhaust ports 131 are arranged on the top surface 112 of the housing 110. Specifically, the first exhaust ports 131 are positioned opposite the first intake port 121 in the Z-axis direction. More specifically, one of the first exhaust ports 131 is positioned so as to be connected in a straight line to the opposing first intake port 121 via the output side space of the laser element 102. The other first exhaust port 131 is positioned so as to be connected in a straight line to the opposing first intake port 121 via the output side space of the module's internal optical component 103.

[0039] In this embodiment, two second exhaust ports 132 are arranged on the top surface 112 of the housing 110. Specifically, the second exhaust ports 132 are positioned opposite the second intake port 122 in the Z-axis direction. More specifically, one second exhaust port 132 is provided so as to be connected in a straight line to the opposing second intake port 122 via the incident side space of the optical component 104. The other second exhaust port 132 is provided so as to be connected in a straight line to the opposing second intake port 122 via the exit side space of the optical component 104.

[0040] <Gas rectification> The laser beam 1 decomposes contaminants contained in the gas within the internal space, and these contaminants adhere to the exit end face 102a of the laser element 102, as well as the incident and exit end faces of the optical components 103 and 104 within the module, undergoing a chemical change and accumulating as deposits. The contaminants are, for example, siloxanes, and the deposits are, for example, Si organic compounds or hydrocarbon compounds.

[0041] Furthermore, upward airflow is generated in the output-side space of the laser element 102, the module's internal optical component 103, and the input-side and output-side spaces of the optical component 104, respectively, due to the heat generated by each element and component.

[0042] In the semiconductor laser apparatus 100 according to this embodiment, the gas introduced into the containment section 110 to suppress the accumulation of deposits is exhausted to the outside of the containment section 110 so as not to be obstructed by the rising airflow.

[0043] Specifically, the intake ports 121 and 122 and the exhaust ports 131 and 132 are arranged facing each other in the vertical direction. Therefore, the gas introduced by the gas supply unit 120 is smoothly exhausted from the exhaust port without its flow being obstructed by the rising airflow as it passes through the space on the emission side of the laser element 102. Consequently, the accumulation of deposits can be effectively suppressed.

[0044] The second intake port 122 and the second exhaust port 132 are provided at positions on the bottom surface 113 and the top surface 112 that correspond to at least one of the incident side space and the exit side space of the optical component 104. For example, the second intake port 122 and the second exhaust port 132 may be provided on the vertically lower and vertically upper sides of the incident end face and the vertically upper side space of the incident end face and the exit end face of the optical component 104, where deposits tend to accumulate.

[0045] As described above, according to the first embodiment, the semiconductor laser apparatus 100 comprises a laser element 102 that emits laser light 1, a housing 110 that houses the laser element 102, a gas supply unit 120 that supplies gas from outside the housing 110, and a gas exhaust unit 130 that exhausts the gas inside the housing 110 to the outside of the housing 110. The gas supply unit 120 has a first intake port 121 that supplies gas from the vertically downward side toward the space around the laser element 102 on the laser light emission side. The gas exhaust unit 130 has a first exhaust port 131 that is positioned opposite the first intake port 121 in the vertical direction.

[0046] Therefore, the gas supplied to the emission-side space of the laser element 102 from the vertically downward side via the first intake port 121 flows almost in a straight line along the vertical direction to the first exhaust port 131 and is exhausted without being obstructed by the rising airflow caused by the heat generated by the laser element 102.

[0047] Therefore, even if contaminants are generated in the space on the laser beam emission end face side of the laser element 102, they are smoothly exhausted by the gas flow, thus effectively suppressing the accumulation of deposits on the emission end face 102a of the laser element 102.

[0048] Furthermore, since there is no need to blow gas with excessive force, the laser module and optical components will not vibrate due to the gas flow.

[0049] Therefore, the deposition of deposits can be suppressed without degrading the optical properties of the laser beam 1, and the reliability of the semiconductor laser device 100 is significantly improved.

[0050] The first air intake port 121 and the first exhaust port 131 are provided in the housing section 110.

[0051] Therefore, compared to the case where a gas supply pipe is placed inside the containment section 110 to supply gas, pollutants can be smoothly exhausted with a simpler configuration.

[0052] The first air intake port 121 is partially provided in the housing section 110 in the vertically lower region corresponding to the output side space of the laser element 102.

[0053] Therefore, compared to the case where the first air intake port 121 is provided over a relatively large area, such as in the shape of an elongated hole extending in the direction of the laser beam 1, the area of ​​the first air intake port 121 is small, making it easier to ensure a certain level of gas supply intensity (gas flow rate). Consequently, it is easier to keep contaminants away from the space on the emission side of the laser element 102. In addition, since gas can be supplied locally to a specific location, it is possible to prevent vibrations from occurring in the optical components 103, etc., inside the module due to collisions with the supplied gas.

[0054] The semiconductor laser apparatus 100 includes an optical component 104 through which the laser light 1 passes. The gas supply unit 120 has a second intake port 122 that supplies gas from the vertically downward side toward at least one of the input-side space and the output-side space of the optical component 104. The gas exhaust unit 130 has a second exhaust port 132 positioned opposite the second intake port 122 in the vertical direction.

[0055] Therefore, the gas supplied from the vertically downward side through the second air intake port 122 to the incident side space and at least one of the incident side spaces of the optical component 104 flows almost in a straight line along the vertical direction to the second air intake port 122 and is exhausted. Furthermore, the gas flow is not obstructed by the rising airflow caused by the heat generated by the optical component 104. Thus, the accumulation of deposits on the optical component 104 can be suppressed. In addition, since contaminants generated not only around the laser element 102 but also around the optical component 104 are smoothly exhausted, the accumulation of deposits on the exit end face 102a of the laser element 102 can be suppressed even more effectively.

[0056] The laser element 102 has multiple emitters that emit laser light 1, and the multiple laser beams 1 from the multiple emitters are focused onto the optical component 104.

[0057] Thus, when the optical component 104 is a diffraction grating or an external resonant mirror that focuses multiple laser beams, the energy density of the laser beam 1 becomes high in the optical component 104, resulting in a large amount of heat generation, and deposits tend to accumulate on the incident and exit end faces of the optical component 104.

[0058] Therefore, when the optical component 104 is a diffraction grating or an external resonant mirror, the benefit of the effect of suppressing deposit deposition on the optical component 104 is significant.

[0059] In this embodiment, the wavelength of laser light 1 is 500 nm or less.

[0060] Siloxanes are easily decomposed at energies in the wavelength range of 500 nm or less. Therefore, when the laser element 102 emits laser light 1 having a wavelength of 500 nm or less, SiO2 is produced due to siloxanes. x The film is likely to form on the exit end face of each element.

[0061] Therefore, when the laser element 102 is an element that emits laser light 1 having a wavelength of 500 nm or less, the benefits of the effects of this embodiment are significant.

[0062] Alternatively, instead of having the first air intake port 121 on the bottom surface 113 of the gas supply unit 120, the gas supply pipe may be placed inside the housing unit 110, and the first air intake port 121 may be provided on the gas supply pipe.

[0063] In this embodiment, two first air intake ports 121 and two second air intake ports 122 are provided, but three or more of each may be provided.

[0064] Furthermore, one first air intake port 121 and one second air intake port 122 may be provided. In that case, the first air intake port 121 may be provided as a relatively large hole in the area of ​​the bottom surface 113 that extends from the vertically lower side of the output side space of the laser element 102 to the vertically lower side of the output side space of the optical component 103 inside the module.

[0065] Furthermore, the second air intake port 122 may be provided as a relatively large hole in the region of the bottom surface 113 extending from the vertically lower side of the incident side space of the optical component 104 to the vertically lower side of the exit side space.

[0066] Furthermore, the first exhaust port 131 and the second exhaust port 132 may also be provided as relatively large holes, corresponding to the first intake port 121 and the second intake port 122, which are formed as relatively large holes, respectively.

[0067] Furthermore, the second intake port 122 and the second exhaust port 132 may be provided not only for the optical component 104, but also for the other optical components mentioned above.

[0068] (Second Embodiment) The following describes the differences between the second embodiment and the first embodiment. Figure 3 is a schematic side view showing the inside of the semiconductor laser device 200 according to the second embodiment.

[0069] The semiconductor laser device 200 is, for example, an external resonant type laser processing device that combines multiple laser beams 1 from multiple laser modules 101 and outputs them externally. The semiconductor laser device 200 comprises multiple laser modules 101 and multiple optical components 105.

[0070] Although not shown in the diagram, a diffraction grating is positioned on the positive X-axis side (downstream in the direction of laser beam 1) of the optical component 105. The diffraction grating is the element that focuses the laser beam 1 after it has passed through the optical component 105. In addition, components corresponding to the optical component 104 according to the first embodiment, such as an external resonant mirror, are also positioned. The external resonant mirror is the element into which the laser beam 1 focused on the diffraction grating is incident.

[0071] The laser module 101 has the same laser element as in the first embodiment. Multiple laser modules 101 are arranged along the side surface 111, offset from each other in the Z-axis and X-axis directions. In particular, in the X-axis direction, adjacent laser modules 101 are spaced apart by a predetermined distance, allowing gas flow to pass through. Therefore, the rising airflow and the gas flow supplied from the first air intake 121 are less likely to be obstructed by the laser modules 101 closer to the top surface 112.

[0072] In Figure 3, the three laser modules 101 are positioned on the positive side of the X-axis as they are closer to the top surface 112. Alternatively, multiple laser modules 101 may be positioned on the negative side of the X-axis as they are closer to the top surface 112.

[0073] The optical component 105 is positioned on the negative side of the X-axis relative to the diffraction grating. The optical component 105 is, for example, a FAC (Fact Axis Collimation) lens that collimates the laser beam 1 in the fast direction.

[0074] In Figure 3, three optical components 105 are provided corresponding to each of the three laser modules 101, and are arranged along the side surface 111, offset from each other in the Z-axis and X-axis directions. Similar to the laser modules 101, in the X-axis direction, adjacent optical components 105 are spaced apart by a predetermined distance, allowing gas flow to pass through. Therefore, the rising airflow caused by the heat generated by the optical components 105 and the gas flow supplied from the second air intake 122 are less likely to be obstructed by the optical components 105 closer to the top surface 112.

[0075] In this embodiment, three first air intake ports 121 are provided on the bottom surface of the housing 110, corresponding to each of the three laser modules 101. Specifically, the first air intake ports 121 are partially provided on the bottom surface 113 of the housing 110 in the area vertically below the output side space of the laser module 101. Therefore, gas is supplied from vertically below toward the output side space of the laser module 101.

[0076] In this embodiment, one first air intake port 121 is provided for each set of laser element 102 and module-internal optical component 103, i.e., for one laser module 101. The gas supplied from the first air intake port 121 is supplied so as to be directed at least toward the output side space of the corresponding laser element 102. As in the first embodiment, the first air intake port 121 may be provided corresponding to each of the laser element 102 and module-internal optical component 103 that constitute the laser module 101.

[0077] In this embodiment, three second air intake ports 122 are arranged on the bottom surface 113 of the housing 110, corresponding to each of the three optical components 105. Specifically, the second air intake ports 122 are partially provided on the bottom surface 113 of the housing 110 in the area vertically below the incident side space of the laser module 101. Therefore, gas is supplied from vertically below toward the incident side space of the optical components 105.

[0078] In this embodiment, three first exhaust ports 131 are arranged on the top surface 112 of the housing 110, corresponding to the three first intake ports 121. Specifically, the first exhaust ports 131 are provided at positions opposite to the first intake ports 121 in the Z-axis direction. More specifically, the first exhaust ports 131 are provided so as to be connected in a straight line to the opposing first intake ports 121 via the output side space of the laser module 101.

[0079] Therefore, the gas introduced into the containment section 110 to suppress the accumulation of sediment passes through the output-side space of each laser module 101 without being obstructed by the upward airflow caused by the heat generated by the laser module 101, and is exhausted to the outside of the containment section 110.

[0080] In this embodiment, three second exhaust ports 132 are arranged on the top surface 112 of the housing 110, corresponding to the three second intake ports 122. Specifically, the second exhaust ports 132 are provided at positions opposite to the second intake ports 122 in the Z-axis direction. More specifically, the second exhaust ports 132 are provided so as to be connected in a straight line to the opposing second intake ports 122 via the incident side space of the optical component 105.

[0081] Therefore, the gas introduced into the containment section 110 to suppress the accumulation of sediment passes through the input space of each optical component 105 without being obstructed by the rising airflow caused by the heat generated by the optical components 105, and is exhausted to the outside of the containment section 110.

[0082] The gas supply unit 120 may have one elongated first air intake port 121 with a relatively large area instead of multiple first air intake ports 121. The elongated first air intake port 121 extends from the output side space of the most positive laser module 101 to the output side space of the most negative laser module 101 in the X-axis direction (direction of laser beam 1 propagation).

[0083] However, having a first air intake port 121 for each laser module 101 makes it easier to ensure a certain level of gas strength during supply and to supply gas locally to specific locations.

[0084] Furthermore, the second intake port 122 and the second exhaust port 132 may be provided not only for the optical component 105, but also for optical components such as diffraction gratings and external resonant mirrors. That is, the second intake port 122 may be provided at a position on the bottom surface 113 corresponding to at least one of the incident side space and the exit side space of optical components such as diffraction gratings and external resonant mirrors. Similarly, the second exhaust port 132 may be provided at a position on the top surface 112 corresponding to at least one of the incident side space and the exit side space of optical components such as diffraction gratings and external resonant mirrors.

[0085] As described above, according to the second embodiment, the semiconductor laser device 200 comprises a plurality of laser modules 101 including laser elements, and the first intake port 121 and the first exhaust port 131 are provided corresponding to the plurality of laser modules 101.

[0086] Therefore, the gas introduced into the containment section 110 to suppress the accumulation of sediment passes through the laser beam emission side space of each laser module 101 without being obstructed by the rising airflow near each laser module 101, and is exhausted to the outside of the containment section 110.

[0087] Therefore, in a semiconductor laser device 200 having multiple laser modules 101, the deposition of deposits on each laser module 101 can be suppressed without degrading the optical properties of the laser light 1, and the reliability of the semiconductor laser device 200 is significantly improved.

[0088] Typically, a laser beam 1 emitted from a single emitter has an energy of several watts. Semiconductor laser devices used for processing require laser beam output of several hundred watts or more. Therefore, the semiconductor laser device 200 has multiple laser modules 101 with a multi-emitter structure, and it is necessary to combine multiple laser beams emitted from multiple laser modules 101.

[0089] According to this embodiment, a laser apparatus for processing can be realized that can suppress the deposition of deposits on each laser module 101 without degrading the optical properties of the laser beam 1.

[0090] Furthermore, the housing section 110 has a vertical side surface 111 aligned with the direction of propagation of the laser beam 1, and the multiple laser modules 101 are arranged along the side surface 111, offset from each other so as not to overlap in the vertical direction or the direction of propagation of the laser beam.

[0091] Therefore, the gas flow supplied from each first intake port 121, passing near each laser module 101 and heading toward each first exhaust port 131, is not obstructed by adjacent laser modules 101. Furthermore, after the supplied gas passes through the output-side space of the laser module 101 closest to the first intake port 121, it does not head toward the output-side space of the laser module 101 closer to the first exhaust port 131. In this way, it is possible to avoid transporting contaminants to the output-side space of other laser modules 101, thereby further reducing the rate of deposit accumulation on the laser modules 101. Consequently, the accumulation of deposits on the laser modules 101 can be further suppressed.

[0092] Furthermore, the second intake port 122 and the second exhaust port 132 are provided to correspond to multiple optical components 105. Therefore, the gas introduced into the containment section 110 to suppress the accumulation of deposits passes through the laser beam incident side space of each optical component 105 without being obstructed by the rising airflow near each optical component 105, and is exhausted to the outside of the containment section 110. Thus, the accumulation of deposits on each optical component 105 can be further suppressed, and contaminants generated near each optical component 105 can be smoothly exhausted, thereby more effectively suppressing the accumulation of deposits on each laser module 101.

[0093] Furthermore, in this embodiment, a second intake port 122 and a second exhaust port 132 are arranged in accordance with optical components such as an external resonant mirror and a diffraction grating. These optical components have a high energy density and generate a large amount of heat because multiple laser beams 1 emitted from multiple laser modules 101 are focused onto them. In other words, contaminants are likely to be generated near these optical components, and deposits tend to accumulate on these optical components. According to this embodiment, the accumulation of deposits on optical components that are prone to deposit accumulation can be suppressed, and contaminants generated near these optical components can be smoothly exhausted, thereby more effectively suppressing the accumulation of deposits on each laser module 101.

[0094] Furthermore, if the length of the first intake port 121 and the first exhaust port 131 in the X-axis direction is longer than the length of the laser module 101 in the X-axis direction, the laser module 101 may be positioned on a straight line connecting the first intake port 121 and the first exhaust port 131. In this case, the gas supplied from the first intake port 121 will bypass the laser module 101 and head towards the first exhaust port 131.

[0095] Similarly, if the lengths of the second intake port 122 and the second exhaust port 132 in the X-axis direction are longer than the length of the optical component 105 in the X-axis direction, the laser module 101 may be positioned on a straight line connecting the second intake port 122 and the second exhaust port 132. In this case, the gas supplied from the second intake port 122 will bypass the optical component 105 and head towards the second exhaust port 132. Similarly, if the lengths of the second intake port 122 and the second exhaust port 132 in the X-axis direction are longer than the length of an optical component such as a diffraction grating or an external resonant mirror in the X-axis direction, the optical component may be positioned on a straight line connecting the second intake port 122 and the second exhaust port 132.

[0096] Furthermore, the laser module 101 may be positioned so that its output end face faces the negative side of the Z-axis direction (bottom surface 113). In this case, by making the first intake port 121 and the first exhaust port 131 longer than the laser module 101 in the direction perpendicular to the direction of propagation of the laser beam emitted from the laser module 101 (X-axis direction), the gas supplied from the first intake port 121 will, upon reaching the vicinity of the output end face of the laser module 101, bypass the laser module 101 and head towards the first exhaust port 131.

[0097] Thus, even if the gas supplied from the intake ports 121 and 122 takes a detour towards the exhaust ports 131 and 132, contaminants can still be exhausted. This is because the intake ports 121 and 122 are formed on the side (downward) where gravity acts on the laser module 101, and the exhaust ports 131 and 132 are formed in the vertical direction at positions corresponding to the intake ports 121 and 122, so the supplied gas is not obstructed by the updraft caused by the heat generated by the laser module 101.

[0098] Furthermore, the laser module 101 may be positioned such that its output end face is tilted at a predetermined angle with respect to the YZ plane (a vertical plane perpendicular to the direction of propagation of the laser beam 1).

[0099] In this case as well, by making the first intake port 121 and the first exhaust port 131 longer than the length of the projection portion of the laser module 101 with respect to the X axis in the X-axis direction, the gas supplied from the first intake port 121 will, upon reaching the vicinity of the output end face of the laser module 101, bypass the laser module 101 and head towards the first exhaust port 131.

[0100] (Third embodiment) The following describes the differences between the third embodiment and the second embodiment. Figure 4 is a schematic side view showing the inside of the semiconductor laser device 300 according to the third embodiment.

[0101] In the third embodiment, the three laser modules 101 are positioned on the negative side of the X-axis direction of the laser beam 1, with the closer they are to the top surface 112.

[0102] In the third embodiment, a gas supply pipe 123 is provided for each of the three laser modules 101.

[0103] The gas supply pipe 123 is an auxiliary nozzle that supplies gas into the housing 110. The gas supply pipe 123 is introduced into the housing 110 from a side surface 119 of the housing 110. The side surface 119 is the negative side in the X-axis direction of the housing 110, which is aligned with the YZ plane (a vertical plane perpendicular to the direction of propagation of the laser beam 1). The gas supply pipe 123 extends in the X-axis direction within the housing 110, and its tip 124 is directed toward the output side space of the corresponding laser module 101. A first intake port 125 is provided at the tip 124 of the gas supply pipe 123, and gas is supplied to the output side space of the corresponding laser module 101 through the first intake port 125.

[0104] In addition, the semiconductor laser device 300 does not necessarily have to have multiple gas supply pipes 123. For example, the gas supply pipe 123 may have a configuration in which multiple tip portions 124 branch off from the main pipe body, and each tip portion 124 may be directed toward the output side space of the corresponding laser module 101. Alternatively, multiple first air intake ports 125 may be formed on the circumferential surface of a single gas supply pipe 123.

[0105] As described above, according to the third embodiment, the gas supply unit 120 has a gas supply pipe 123 for introducing gas into the housing unit 110, and the first air intake port 125 is provided in the gas supply pipe 123.

[0106] Furthermore, the multiple laser modules 101, each having a laser element 102, are arranged with the upper vertical side positioned further upstream in the direction of laser beam 1 propagation. In addition, the gas supply pipe 123 extends in the direction of laser beam 1 propagation, the tip 124 of the gas supply pipe 123 is located near the space on the emission side of the corresponding laser module 101, and the first intake port 125 is provided at the tip 124.

[0107] In other words, a gas supply means separate from the first air intake port 121 on the bottom surface 113 of the housing 110 is provided. Therefore, the amount of gas supplied to the output side space of the laser module 101 can be increased, and contaminants can be exhausted more efficiently. In addition, the multiple laser modules 101 and the gas supply pipe 123 are arranged so as not to obstruct the gas flow that passes through the output side space of the laser module 101 toward the first exhaust port 131, as well as the upward airflow.

[0108] Therefore, pollutants can be exhausted more efficiently to the outside of the containment unit 110.

[0109] The multiple gas supply pipes 123 may be introduced into the housing 110 from a side other than the side 119 of the housing 110, for example, from a side facing the side 111 on which the mounting substrate is located. Alternatively, they may be introduced into the housing 110 from the side 111. In this case, the tip 124 of the gas supply pipe 123 is located on the negative Z-axis side with respect to the module 101, and supplies gas to the negative Z-axis side of the module 101.

[0110] Furthermore, a gas supply pipe 123 may be provided for only one laser module 101. For example, a gas supply pipe 123 may be provided only for the laser module 101 located furthest upstream in the direction of laser beam 1 propagation.

[0111] Furthermore, the first air intake port 121 may not be provided on the bottom surface 113, and gas may be supplied to the output-side space of each laser module 101 solely by the gas supply pipe 123.

[0112] The semiconductor laser apparatus 300 may also be provided with a gas supply pipe that supplies gas to at least one of the incident side space and the exit side space of each optical component 105.

[0113] (Fourth Embodiment) The following describes the differences between the fourth embodiment and the second embodiment. Figure 5 is a schematic side view showing the inside of the semiconductor laser device 400 according to the fourth embodiment.

[0114] The housing section 110 according to this embodiment does not have a top surface 112 or a bottom surface 113, and is a cylindrical body with the entire upper and lower sections open.

[0115] The gas supply unit 120 has an intake-side hollow body 126, and a first intake port 127 and a second intake port 128 are provided at the upper part of the intake-side hollow body 126.

[0116] The intake-side hollow body 126 is positioned vertically below the housing section 110, with its upper part fitted into the housing section 110. In other words, the upper surface of the intake-side hollow body 126 closes the lower opening of the housing section 110.

[0117] Gas supplied from outside the semiconductor laser device 400 flows into the intake-side hollow body 126. The supplied gas is delivered into the interior of the housing 110 through the first intake port 127 and the second intake port 128.

[0118] The first air intake port 127 extends from the output-side space of the laser module 101 on the far negative side in the X-axis direction to the output-side space of the laser module 101 on the far positive side. Therefore, gas is supplied from the vertically downward side toward the output-side space of each laser module 101.

[0119] Furthermore, the second intake port 128 extends from the incident-side space of the most negative optical component 105 in the X-axis direction to the incident-side space of the most positive optical component 105. Therefore, gas is supplied from the vertically downward side toward the incident-side space of each optical component 105.

[0120] The first intake port 127 and the second intake port 128 are slit sections in which multiple slits extending in the Y-axis direction are spaced apart in the X-axis direction. Therefore, since gas is supplied into the containment section 110 through slits with a narrow area, gas can be supplied to the output-side space of the laser module 101 and the input-side space of the optical component 105 with a strength above a certain level.

[0121] The gas exhaust section 130 has an exhaust-side hollow body 136, and a first exhaust port 137 and a second exhaust port 138 are provided at the lower part of the exhaust-side hollow body 136.

[0122] The exhaust-side hollow body 136 is positioned vertically above the housing section 110, with its lower part fitted into the housing section 110. In other words, the lower surface of the exhaust-side hollow body 136 closes the upper opening of the housing section 110.

[0123] The gas inside the containment section 110 is exhausted into the exhaust-side hollow body 136 via the first exhaust port 137 and the second exhaust port 138.

[0124] The first exhaust port 137 and the second exhaust port 138 are located in regions facing the first intake port 127 and the second intake port 128, respectively, in the Z-axis direction. More specifically, the first exhaust port 137 extends from the output side space of the laser module 101 on the far negative side in the X-axis direction to the output side space of the laser module 101 on the far positive side. The second exhaust port 138 extends from the input side space of the optical component 105 on the far negative side in the X-axis direction to the input side space of the optical component 105 on the far positive side.

[0125] The first exhaust port 137 and the second exhaust port 138 are slit sections, each having multiple slits extending in the Y-axis direction and spaced apart in the X-axis direction.

[0126] In this embodiment, the first intake port 127 and the second intake port 128 may be located between the intake-side hollow body 126 and the housing 110. Therefore, for example, the housing 110 may have a bottom surface, and the first intake port 127 and the second intake port 128 may be provided on the bottom surface. Similarly, the first exhaust port 137 and the second exhaust port 138 may be located between the exhaust-side hollow body 136 and the housing 110. For example, the housing 110 may have a top surface, and the first exhaust port 137 and the second exhaust port 138 may be provided on the top surface.

[0127] Furthermore, in the semiconductor laser apparatus 400, intake ports may be continuously formed from the first intake port 127 to the second intake port 128. Similarly, exhaust ports may be continuously formed from the first exhaust port 137 to the second exhaust port 138.

[0128] Furthermore, the semiconductor laser device 400 may have only one laser module 101 and one optical component 105.

[0129] As described above, according to the fourth embodiment, the gas supply unit 120 has an intake-side hollow body 126 located vertically below the housing unit 110, and a first intake port 127 is located between the intake-side hollow body 126 and the housing unit 110. The gas exhaust unit 130 has an exhaust-side hollow body 136 located vertically above the housing unit 110, and a first exhaust port 137 is located between the housing unit 110 and the exhaust-side hollow body 136.

[0130] Therefore, the gas supplied from outside the semiconductor laser device 400 into the intake-side hollow body 126 is supplied to the housing section 110 from the vertically downward side as an airflow that covers a wide area in the XY plane. The gas supplied to the housing section 110 is supplied to the output-side space of each laser module 101 and the input-side space of each optical component 105, respectively, and flows almost in a straight line towards the first exhaust port 137 and the second exhaust port 138.

[0131] As a result, even if contaminants are generated in the emission-side space of the laser module 101 and near the input-side space of the optical component 105, the contaminants can be more efficiently and quickly exhausted outside the containment section 110 by being carried by the gas flow. Therefore, the accumulation of deposits on each laser module 101 and each optical component 105 can be further suppressed. In addition, the structure of the intake system (e.g., piping) of the gas supply section 120 and the exhaust system in the gas exhaust section 130 can be simplified.

[0132] (Fifth embodiment) The following describes the differences between the fifth embodiment and the fourth embodiment. Figure 6 is a schematic side view showing the interior of the semiconductor laser device 500 according to the fifth embodiment. Figure 7 is a schematic plan view showing the interior of the semiconductor laser device 500 according to the fifth embodiment.

[0133] The housing section 110 has a bottom surface 113 that aligns with the XY plane (i.e., the horizontal plane). A mounting substrate on which the laser module 101 and optical components 105 are mounted is placed on the bottom surface 113.

[0134] Specifically, as shown in Figure 6, the three laser modules 101 are arranged so that they overlap each other when viewed from a side view along the ZX plane (a vertical plane along the direction of propagation of the laser beam 1). Furthermore, the three laser modules 101 are offset in the Y-axis direction so that they do not overlap in the X-axis direction (see Figure 7).

[0135] Three optical components 105 are arranged corresponding to the three laser modules 101. The three optical components 105 are arranged so that they overlap each other when viewed from the side along the ZX plane (a vertical plane along the direction of propagation of the laser beam 1), similar to the laser modules 101. In addition, the three optical components 105 are offset in the Y-axis direction so that they do not overlap each other in the X-axis direction (see Figure 7).

[0136] Three first air intake ports 127 are provided on the bottom surface 113 of the housing section 110, corresponding to the three laser modules 101. Specifically, the first air intake ports 127 are located vertically below the output-side space of the corresponding laser module 101 and extend in the Y-axis direction (see Figure 7). Therefore, gas is supplied from the intake-side hollow body 126 to the output-side space of each laser module 101 via each first air intake port 127.

[0137] Furthermore, the bottom surface 113 of the housing section 110 is provided with three second air intake ports 128 corresponding to the three optical components 105. Specifically, the second air intake ports 128 are located vertically below the output-side space of the corresponding optical component 105 and extend in the Y-axis direction (see Figure 7). Thus, gas is supplied from the intake-side hollow body 126 to the output-side space of each optical component 105 via each first air intake port 127.

[0138] The first intake port 127 and the second intake port 128 are slit portions, each having multiple slits extending in the X-axis direction and spaced apart in the Y-axis direction.

[0139] Thus, since a first air intake port 127 is provided for each laser module 101 and a second air intake port 128 is provided for each optical component 105, it is easy to ensure that the gas strength supplied to the output-side space of each laser module 101 and the output-side space of each optical component 105 is above a certain level, and gas can be supplied locally to specific locations. Therefore, contaminants can be exhausted more efficiently than in the fourth embodiment.

[0140] Three first exhaust ports 137 are arranged on the top surface 112 of the housing section 110, corresponding to the three first air intake ports 127. Each first exhaust port 137 is positioned opposite to the first air intake port 127 in the Z-axis direction and extends in the Y-axis direction. Therefore, contaminants generated in the output-side space of each laser module 101 are exhausted into the exhaust-side hollow body 136 via each first exhaust port 137.

[0141] Furthermore, three second exhaust ports 138 are arranged on the top surface 112 of the housing section 110, corresponding to the three second air intake ports 128. Each second exhaust port 138 is positioned opposite the second air intake port 128 in the Z-axis direction and extends in the Y-axis direction. Therefore, contaminants generated in the output-side space of each optical component 105 are exhausted to the exhaust-side hollow body 136 via each second exhaust port 138.

[0142] The first exhaust port 137 and the second exhaust port 138 are slit sections, each having multiple slits extending in the X-axis direction and spaced apart in the Y-axis direction.

[0143] As described above, according to the fifth embodiment, the housing 110 has a horizontal bottom surface 113, and the multiple laser modules 101 are arranged on the bottom surface 113, offset in the Y-axis direction so as not to overlap with the direction of propagation of the laser beam 1 (X-axis direction).

[0144] Thus, the same effects as in the fourth embodiment can be obtained even in a semiconductor laser device 500 in which multiple laser modules 101 are arranged in a row on the bottom surface 113.

[0145] The semiconductor laser device 500 may have only one laser module 101 and one optical component 105.

[0146] (Sixth Embodiment) The following describes the sixth embodiment, mainly focusing on the differences from the fifth embodiment. Figure 8 is a schematic side view showing the inside of the semiconductor laser device 600 according to the sixth embodiment. In the semiconductor laser device 600 shown in Figure 8, a cooling water channel is introduced from the bottom of the laser module 101.

[0147] Below the bottom surface 113, the intake side hollow body 626a, the intake side hollow body 626b, and the element cooling block 650 are arranged.

[0148] In the sixth embodiment, the gas supply unit 120 has intake-side hollow bodies 626a and 626b which are smaller than those in the fifth embodiment. The intake-side hollow bodies 626a and 626b are located below the bottom surface 113.

[0149] The intake-side hollow body 626a is positioned vertically below the output-side space of the laser module 101, and extends in the Y-axis direction from the output-side space of the most positive laser module 101 to the output-side space of the most negative laser module 101. Therefore, gas is supplied from the intake-side hollow body 626a to the output-side space of each laser module 101 via each first intake port 127.

[0150] The intake-side hollow body 626b is positioned vertically below the output-side space of the optical component 105, and extends in the Y-axis direction from the output-side space of the most positive optical component 105 to the output-side space of the most negative optical component 105. Therefore, gas is supplied from the intake-side hollow body 626b to the output-side space of each optical component 105 via each second intake port 128.

[0151] The element cooling block 650 is a block that constitutes a water-cooled cooling system. The element cooling block 650 is positioned directly below the multiple laser modules 101 in the vertical direction, below the bottom surface 113. Since the element cooling block 650 is in contact with the bottom surface 113, it can cool the multiple laser modules 101 through the bottom surface 113.

[0152] The cooling system may employ either an active cooling method or a passive cooling method. The active cooling method is a cooling method that forms water channels within the laser module 101. In contrast, the passive cooling method is a cooling method that does not form water channels within the laser module 101.

[0153] The semiconductor laser apparatus 600 may have support blocks 660 and 670. Support block 660 is positioned between intake-side hollow bodies 626a and 626b. Support block 670 is positioned on the positive side of intake-side hollow body 626b in the X-axis direction. The housing 110 is supported by support blocks 660 and 670.

[0154] As described above, the sixth embodiment provides the same effects as the fifth embodiment. The semiconductor laser device 600 also includes an element cooling block 650. The element cooling block 650 is located vertically below the housing section 110 and at a different position from the first air intake port 127, and cools the multiple laser modules 101 via the bottom surface 113.

[0155] Therefore, in a relatively small space, multiple laser modules 101 can be cooled while gas can be effectively supplied into the housing 110. As a result, the deposition of deposits can be suppressed without degrading the optical properties of the laser light 1 to the multiple laser modules 101, significantly improving the reliability of the semiconductor laser device 100, and effectively cooling the multiple laser modules 101.

[0156] The water channel for the cooling system may be introduced into the interior of the housing 110 from the side surface 119 of the housing 110. As described above, the side surface 119 is the negative side in the X-axis direction, which is aligned with the YZ plane.

[0157] (Variation 1) The following describes the differences between the laser device 700 according to Modification 1 and the second embodiment.

[0158] Figure 9 is a schematic side view showing the inside of the laser device 700 according to Modification 1.

[0159] The housing section 110 of the laser device 700 has multiple internal spaces S1 and S2. Three laser modules 101 are arranged in internal space S1, offset from each other so as not to overlap in the Z-axis and X-axis directions.

[0160] Each laser module 101 emits laser light 1. Multiple laser beams 1 are focused by a focusing element such as a diffraction grating (not shown). The light generated by focusing multiple laser beams 1 is the focused laser beam LC.

[0161] Similar to the second embodiment, three first air intake ports 121 are provided on the bottom surface 113 of the housing 110, corresponding to each of the three laser modules 101. In addition, three first exhaust ports 131 are arranged on the top surface 112 of the housing 110, corresponding to the three first air intake ports 121.

[0162] Furthermore, an optical component 501 is arranged in the internal space S1. The optical component 501 is an optical component through which the focused laser light LC passes.

[0163] As shown in Figure 9, an optical component 502 may be placed in the wall separating the internal space S1 and the internal space S2. The optical component 502 is an optical component that guides the focused laser light LC into the internal space S2.

[0164] In the internal space S2, for example, optical components 503, 504, and 505 are arranged. The focused laser beam LC has its direction of travel changed by optical component 503, passes through optical component 504, and then its direction of travel is changed again by optical component 505. The focused laser beam LC may also be output to the outside of the housing 110 by optical component 506 provided on the positive X-axis side of the housing 110.

[0165] Thus, when the housing section 110 has internal spaces S1 and S2, the second intake port 122 and the second exhaust port 132 are positioned on the bottom surface 113 and the top surface 112 so as to correspond to the optical components 501, 503-505 arranged in each internal space, and the optical component 502 arranged at the boundary between the internal spaces S1 and S2.

[0166] Specifically, the second intake port 122 is located vertically below the space on the incident end face side and the space on the exit end face side of the optical component 501, and the second exhaust port 132 is located vertically above it. Similarly, the second intake port 122 is located vertically below the space on the incident end face side and the space on the exit end face side of the optical component 502, and the second exhaust port 132 is located vertically above it.

[0167] Therefore, the deposition of deposits on optical components 501 and 502 can be suppressed.

[0168] Furthermore, a second intake port 122 and a second exhaust port 132 are positioned vertically below and above the optical components 503 to 505, respectively. As a result, the gas supplied from the two second intake ports 122 bypasses the optical component 503 and is supplied to the space on the reflective end face side of the optical component 503. The gas then passes through the space on the incident end face side of the optical component 504, bypasses the optical component 504, and reaches the space on the exit end face side of the optical component 504. The gas then reaches the space on the reflective end face side of the optical component 505, bypasses the optical component 505, and heads towards the two second exhaust ports 132, from which it is exhausted to the outside of the housing 110.

[0169] Therefore, the deposition of deposits on the optical components 503-505 within the internal space S2 can be suppressed.

[0170] According to Modification 1, the same effects as in the first and second embodiments can be obtained. Furthermore, by arranging the second intake port 122 and the second exhaust port 132 on the bottom surface 113 and top surface 112 of the internal spaces S1 and S2, respectively, the accumulation of deposits on the optical components 501, 503-505 in the internal spaces S1 and S2, and on the optical component 502 located at the boundary between the internal spaces S1 and S2, can be suppressed.

[0171] In the above-described modified example 1, multiple second intake ports 122 and second exhaust ports 132 are provided for each of the optical components 503 to 505. However, instead of multiple second intake ports 122 for each of the optical components 503 to 505, one intake port 122 extending in the X-axis direction may be provided, and instead of multiple second exhaust ports 132, one second exhaust port 132 extending in the X-axis direction may be provided.

[0172] Specifically, the second intake port 122 and the second exhaust port 132 should be formed such that their lengths in the X-axis direction are longer than the length of the projection portion of the optical components 503-505 with respect to the X-axis.

[0173] (Modification 2) The following describes the semiconductor laser device 800 according to Modification 2, mainly explaining the differences from the third embodiment. Figure 10 is a schematic side view showing the inside of the semiconductor laser device 800 according to Modification 2.

[0174] In Figure 10, three laser modules 101 are arranged in the housing 110. Furthermore, the laser beam emission end face 101a of each laser module 101 is positioned at an angle with respect to the vertical plane (YZ plane). That is, in the semiconductor laser device 800, the laser beam 1 is emitted in a direction inclined at a predetermined angle with respect to the X-axis direction.

[0175] Similar to the fourth embodiment, the gas supply unit 120 has an intake-side hollow body 126, and a first intake port 127 is provided at the upper part of the intake-side hollow body 126. The gas exhaust unit 130 has an exhaust-side hollow body 136, and a first exhaust port 137 is provided at the lower part of the exhaust-side hollow body 136. The first intake port 127 and the first exhaust port 137 extend in the X-axis direction to the extent that they cover at least the projection portions of the three laser modules 101 with respect to the X axis.

[0176] In Modification 2, the gas supply unit 120 has a gas supply pipe 123. That is, in Modification 2, gas is supplied to each laser module 101 not only from the first air intake port 127 but also from the gas supply pipe 123.

[0177] In Figure 10, the gas supply unit 120 has three gas supply pipes 123 corresponding to the three laser modules 101. Each gas supply pipe 123 supplies gas from a first intake port 125 at its tip 124 toward the space on the exit end face 101a side of the laser module 101.

[0178] As shown in Figure 10, the tip portion 124 may extend parallel to the exit end surface 101a, and the gas supplied from the gas supply pipe 123 may be supplied so as to flow parallel to the exit end surface 101a.

[0179] As explained above, according to Modification 2, even when the output end face 101a of the laser module 101 is positioned at an angle to the vertical plane (YZ plane), the accumulation of deposits on the laser module 101 can be suppressed by positioning the first intake port 127 and the second exhaust port 138 on the lower and upper sides of the laser module 101 in the vertical direction.

[0180] Furthermore, the semiconductor laser device 800, by including a gas supply pipe 123, can further suppress the deposition of deposits on the laser module 101.

[0181] The semiconductor laser device 800 does not necessarily have to have an intake-side hollow body 126 and an exhaust-side hollow body 136. Instead, the bottom and top surfaces of the housing 110 of the semiconductor laser device 800 may be provided with elongated holes extending in the X-axis direction, namely a first intake port 121 and a first exhaust port 131.

[0182] (Other variations) In the second to sixth embodiments, the second intake port 122 and the second exhaust port 132 only need to be positioned on the vertically upper and lower sides of at least one of the incident side space and the exit side space of the optical component 105, respectively.

[0183] Furthermore, the second intake port 122 and the second exhaust port 132 may be positioned on the vertically upper and lower sides of the end face space where deposits are likely to accumulate, respectively, of the incident end face and the exit end face of the optical component 105.

[0184] In the third to sixth embodiments, optical components such as a diffraction grating and an external resonant mirror are provided to focus the laser beam 1. Also, in the third to sixth embodiments, the second intake port 122 and the second exhaust port 132 may be located vertically above and below at least one of the incident side space and the exit side space of the diffraction grating. Similarly, the second intake port 122 and the second exhaust port 132 may be located vertically above and below at least one of the incident side space and the exit side space of the external resonant mirror.

[0185] In each of the embodiments described above, the laser element 102 may be an element having only one emitter. Alternatively, the laser element 102 may be an element that emits laser light 1 with a wavelength longer than 500 nm.

[0186] This disclosure also includes forms obtained by applying various modifications to each of the above embodiments and variations that a person skilled in the art could conceive of, as well as forms realized by arbitrarily combining the components and functions of each of the above embodiments without departing from the spirit of this disclosure.

[0187] According to this disclosure, it is possible to provide a highly reliable semiconductor laser device that can suppress the deposition of contaminant-derived deposits without degrading the optical properties of the laser light. [Industrial applicability]

[0188] This disclosure is suitably applicable to semiconductor laser devices equipped with semiconductor laser elements. In particular, it is suitably applicable to semiconductor laser devices equipped with a laser element having an end-face exposed structure and emitting short-wavelength (blue band) laser light. [Explanation of Symbols]

[0189] 1. Laser light 100, 200, 300, 400, 500, 600 Semiconductor Laser Devices 101 Laser Module 102 Laser element 103 Optical components within the module 104 Optical Components 110 Storage Unit 111, 119 Side view 112 Top surface 113 Bottom 120 Gas Supply Department 121, 125, 127s First air intake 122, 128 Second air intake 123 Gas supply pipe 124 Tip 126, 626a, 626b Intake side hollow body 130 Gas exhaust section 131, 137 First exhaust port 132, 138 Second exhaust port 136 Exhaust side hollow body Cooling block for 650 elements 626a, 626b Intake side hollow body 660, 670 support blocks

Claims

1. A laser element that emits laser light, A housing section that houses at least one laser element inside, A gas supply unit that supplies gas from outside the aforementioned housing unit, A gas exhaust unit that exhausts the gas inside the containment to the outside of the containment, Equipped with, The gas supply unit has at least one first intake port that supplies gas from the vertically downward side toward the space around the at least one laser element on the laser light emission side, The gas exhaust section has at least one first exhaust port positioned in the vertical direction opposite to the at least one first intake port, The at least one laser element comprises a plurality of such laser elements, The aforementioned at least one first air intake port comprises a plurality of first air intake ports, The at least one first exhaust port comprises a plurality of first exhaust ports, The plurality of first intake ports and the plurality of first exhaust ports are provided corresponding to the plurality of laser elements. The gas supply unit has an intake-side hollow body located vertically below the housing unit, The at least one first intake port is located between the intake-side hollow body and the housing portion. The gas exhaust section has an exhaust-side hollow body located vertically above the housing section. The at least one first exhaust port is located between the housing and the exhaust-side hollow body. Semiconductor laser device.

2. The upper part of the intake-side hollow body is fitted into the housing, and the upper surface of the intake-side hollow body closes the lower opening of the housing, The lower part of the exhaust-side hollow body is fitted into the housing, and the lower surface of the exhaust-side hollow body closes the upper opening of the housing. The semiconductor laser apparatus according to claim 1.

3. The at least one first intake port and the at least one first exhaust port are provided in the housing. The semiconductor laser apparatus according to claim 1 or 2.

4. The at least one first air intake port is partially provided in the housing portion in a vertically lower region corresponding to the space on the laser light emission side of the at least one laser element. The semiconductor laser apparatus according to claim 3.

5. The housing portion has a vertical side surface aligned with the direction of propagation of the laser light, Multiple laser elements are arranged along the side surface, offset from each other so as not to overlap in the vertical direction and the direction of propagation of the laser light. The semiconductor laser apparatus according to claim 1.

6. The gas supply unit has a plurality of gas supply pipes that introduce gas into the housing unit. The plurality of first air intake ports are provided in each of the plurality of gas supply pipes. The semiconductor laser apparatus according to claim 5.

7. The plurality of laser elements are arranged so that the upper vertical side is positioned further upstream in the direction of propagation of the laser light. The plurality of gas supply pipes extend in the direction of propagation of the laser beam, The aforementioned plurality of gas supply pipes have a plurality of ends, The plurality of tip portions are located near the space on the laser light emission side of the corresponding laser element among the plurality of laser elements, The plurality of first air intake ports are provided at each of the plurality of tip portions, The semiconductor laser apparatus according to claim 6.

8. The aforementioned storage section has a horizontal bottom surface, Multiple laser elements are arranged on the bottom surface, offset from each other so as not to overlap in the direction of laser beam propagation. The semiconductor laser apparatus according to claim 1.

9. A cooling block is provided located vertically below the housing section and at a position different from the plurality of first air intake ports, and which cools the plurality of laser elements via the bottom surface. The semiconductor laser apparatus according to claim 8.

10. The optical component through which the laser light passes is further provided, The gas supply unit has a second intake port that supplies gas from the vertically downward side toward at least one of the spaces on the laser light incident side and the laser light emission side of the optical component, The gas exhaust section has a second exhaust port positioned opposite the second intake port in the vertical direction. The semiconductor laser apparatus according to claim 1 or 2.

11. The laser element has a plurality of emitters that emit the laser light, Multiple laser beams from multiple emitters are focused onto the optical component. The semiconductor laser apparatus according to claim 10.

12. The at least one laser element comprises a plurality of such laser elements, The optical component is a diffraction grating or an external resonant mirror that focuses the multiple laser beams emitted from the multiple laser elements. The semiconductor laser apparatus according to claim 10.

13. The wavelength of the laser light is 500 nm or less. The semiconductor laser apparatus according to claim 1 or 2.

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