Substrate processing system and transport method
Patent Information
- Application Number
- JP2024555740
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-10-07
- Filing Date
- 2023-09-26
- Publication Date
- 2026-09-30
- Estimated Expiration
- 2043-09-26
AI Technical Summary
【0006】 一態様によれば、基板処理の生産性を向上させることができる。
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Figure 0007927081000003
Abstract
Description
[Technical Field]
[0001] The present disclosure relates to a substrate processing system and a transfer method. [Background Art]
[0002] Patent Document 1 discloses a substrate processing system that performs substrate processing (plasma processing) by arranging a focus ring around a mounting table (substrate support portion) on which a substrate is mounted. When replacing a focus ring, this substrate processing system performs the operations of: unloading the focus ring from the processing chamber by a transfer device; cleaning the surface of the mounting table on which the focus ring is placed; and loading the focus ring into the processing chamber by the transfer device. [Prior Art Literature] [Patent Literature]
[0003] [Patent Document 1] Japanese Unexamined Patent Publication No. 2018-010992 [Summary of the Invention] [Problem to be Solved by the Invention]
[0004] The present disclosure provides a technique capable of improving the productivity of substrate processing. [Means for Solving the Problem]
[0005] According to one aspect of the present disclosure, a substrate processing system is provided, comprising: a processing module having a processing chamber; a substrate support portion having a substrate support surface and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring; a vacuum transport module connected to the processing module and having a transport robot for transporting the ring; a temperature adjustment unit capable of temperature-adjusting the ring; and a control unit, wherein the control unit performs, in this order, the steps of temperature-adjusting the ring using the temperature adjustment unit before transporting the ring into the processing module, and transporting the ring whose temperature has been adjusted by the temperature adjustment unit using the transport robot and placing it on the substrate support portion. [Effects of the Invention]
[0006] According to one embodiment, the productivity of substrate processing can be improved. [Brief explanation of the drawing]
[0007] [Figure 1] This figure shows an example of a substrate processing system according to the embodiment. [Figure 2] This is a schematic cross-sectional view showing an example of a plasma processing apparatus. [Figure 3] This figure shows a magnified portion of Figure 2. [Figure 4] This is a first schematic side cross-sectional view showing the ring storage module. [Figure 5] This is a second schematic side cross-sectional view of the ring storage module, taken from a direction perpendicular to that of Figure 4. [Figure 6] This is a flowchart showing the first example of a transport method. [Figure 7] A flowchart showing an example of the procedure for process S101. [Figure 8] This is a flowchart showing the second example of a transport method. [Figure 9] This is a flowchart showing the third example of a transport method. [Figure 10] This is a diagram showing an enlarged view of a part of a plasma processing apparatus according to another embodiment. [Figure 11]This figure shows an example of a substrate processing system according to another embodiment. [Figure 12] This is a flowchart showing the transport method for the fourth example. [Figure 13] This is a flowchart showing the transport method for the fifth example. [Modes for carrying out the invention]
[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.
[0009] [Circuit board processing system] Referring to Figure 1, the substrate processing system PS according to the embodiment will be described. Figure 1 is a diagram showing an example of the substrate processing system PS according to the embodiment. As shown in Figure 1, the substrate processing system PS is a system capable of performing various processes such as plasma processing on a substrate W. The substrate W may be, for example, a semiconductor wafer.
[0010] The substrate processing system PS comprises a vacuum transfer module TM, a plurality of processing modules PM1 to PM7, a ring storage module RSM, a plurality of load lock modules LL1 to LL3, an atmospheric transfer module LM, load ports LP1 to LP4, an aligner AN, and a control unit CU. The vacuum transfer module TM is also called a transfer module. The processing modules PM1 to PM7 are also called process modules. The ring storage module RSM is also called a ring stocker module. The atmospheric transfer module LM is also called a loader module.
[0011] The vacuum transfer module TM has a rectangular shape in a plan view. Processing modules PM1 to PM7, load lock modules LL1 to LL3, and a ring storage module RSM are connected to the vacuum transfer module TM. The vacuum transfer module TM has a vacuum transfer chamber. The interior of the vacuum transfer chamber is maintained in a vacuum atmosphere. A transfer robot TR1 is provided in the vacuum transfer chamber (inside the vacuum transfer module TM).
[0012] The transfer robot TR1 is configured to be rotatable, expandable / contractible, and liftable / lowerable. The transfer robot TR1 has an upper fork FK1 and a lower fork FK2. The upper fork FK1 and the lower fork FK2 of the transfer robot TR1 are configured to be capable of holding a substrate W and a ring 113 (an inner ring 113a and an outer ring 113b), respectively. The transfer robot TR1 holds and transfers the substrate W and the ring 113 among the processing modules PM1 to PM7, the load lock modules LL1 to LL3, and the ring storage module RSM.
[0013] A position detection sensor S1 is provided on the upper fork FK1. A position detection sensor S2 is provided on the lower fork FK2. The position detection sensors S1 and S2 detect the positions of the inner ring 113a and the outer ring 113b placed in the processing modules PM1 to PM7. The position detection sensors S1 and S2 may be, for example, optical displacement sensors, cameras, or the like.
[0014] The vacuum transport module TM may be provided with position detection sensors S11 and S12. The position detection sensors S11 and S12 are provided on the transport path of the substrate W and ring 113 (inner ring 113a) being transported from the vacuum transport module TM to the processing module PM1. The position detection sensors S11 and S12 are used when transporting the substrate W or ring 113 from the vacuum transport module TM to the processing module PM1, and when transporting the substrate W or ring 113 from the processing module PM1 to the vacuum transport module TM. The position detection sensors S11 and S12 are provided, for example, near a gate valve (not shown) that separates the vacuum transport module TM and the processing module PM1. The position detection sensors S11 and S12 are arranged, for example, such that the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the inner ring 113a. The vacuum transport module TM may also be provided with position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, and S72, similar to position detection sensors S11 and S12.
[0015] Processing modules PM1 to PM7 are connected to the vacuum transport module TM. Processing modules PM1 to PM7 have a vacuum processing chamber. A substrate support section 11 (see Figure 2) is provided inside the vacuum processing chamber. After a substrate W is placed on the substrate support section 11, processing modules PM1 to PM7 reduce the pressure inside, introduce a processing gas, apply RF power to generate plasma, and perform plasma processing on the substrate W. The vacuum transport module TM and processing modules PM1 to PM7 are separated by a gate valve (not shown) that can be opened and closed.
[0016] The ring storage module RSM is an example of a device for storing a ring 113, and is connected to the vacuum transfer module TM. The ring storage module RSM stores, for example, an inner ring 113a and an outer ring 113b that constitute the ring 113. The ring storage module RSM may be configured to store only the inner ring 113a. The ring storage module RSM may be configured to store only the outer ring 113b. The inner ring 113a and the outer ring 113b are transferred between the processing modules PM1 to PM7 and the ring storage module RSM by the transfer robot TR1. The vacuum transfer module TM and the ring storage module RSM are partitioned by an openable / closable gate valve G (see FIG. 5).
[0017] The load-lock modules LL1 to LL3 are provided between the vacuum transfer module TM and the atmospheric transfer module LM. The load-lock modules LL1 to LL3 are connected to the vacuum transfer module TM and the atmospheric transfer module LM. Each of the load-lock modules LL1 to LL3 internally includes an internal pressure variable chamber that can be switched between vacuum and atmospheric pressure. A stage (not shown) on which a substrate W can be placed is provided in the internal pressure variable chamber. When transferring the substrate W from the atmospheric transfer module LM to the vacuum transfer module TM, the load-lock modules LL1 to LL3 maintain the internal pressure variable chamber at atmospheric pressure, receive the substrate W from the atmospheric transfer module LM, then depressurize the internal pressure variable chamber and transfer the substrate W to the vacuum transfer module TM. When transferring the substrate W from the vacuum transfer module TM to the atmospheric transfer module LM, the load-lock modules LL1 to LL3 maintain the internal pressure variable chamber in a vacuum state, receive the substrate W from the vacuum transfer module TM, then pressurize the internal pressure variable chamber to atmospheric pressure and transfer the substrate W to the atmospheric transfer module LM. The load-lock modules LL1 to LL3 and the vacuum transfer module TM are partitioned by an openable / closable gate valve (not shown). The load-lock modules LL1 to LL3 and the atmospheric transfer module LM are partitioned by an openable / closable gate valve (not shown).
[0018] The atmospheric transport module LM is provided opposite the vacuum transport module TM. The atmospheric transport module LM may be, for example, an EFEM (Equipment Front End Module). The atmospheric transport module LM has a rectangular shape in plan view. The atmospheric transport module LM has an atmospheric transport chamber. The inside of the atmospheric transport chamber is maintained at atmospheric pressure. A transport robot TR2 is provided inside the atmospheric transport chamber. The transport robot TR2 is configured to be able to rotate, extend and retract, and move up and down. Like the transport robot TR1, the transport robot TR2 also has two forks (upper fork, lower fork) capable of holding and transporting the substrate W. The transport robot TR2 holds and transports the substrate W between the load ports LP1 to LP4, the aligner AN, and the load lock modules LL1 to LL3. The atmospheric transport module LM may have an FFU (Fan Filter Unit).
[0019] Load ports LP1 to LP4 are connected to the atmospheric transport module LM. Multiple substrate storage containers CS1 are placed on load ports LP1 to LP4. A substrate storage container CS1 may be a Front-Opening Unified Pod (FOUP) that can store multiple (e.g., 25) substrates W.
[0020] The aligner AN is connected to the atmospheric transport module LM. The aligner AN is configured to adjust the position of the substrate W. The aligner AN may be located inside the atmospheric transport chamber.
[0021] The control unit CU controls various parts of the substrate processing system PS. For example, the control unit CU controls the operation of the transport robot TR1 provided in the vacuum transport module TM, the operation of the transport robot TR2 provided in the atmospheric transport module LM, and the opening and closing of gate valves. The control unit CU may be, for example, a computer. The control unit CU has a processor such as a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), and auxiliary storage devices. The CPU operates based on programs stored in the ROM or auxiliary storage devices and controls various parts of the substrate processing system PS.
[0022] [Plasma treatment device] Referring to Figures 2 and 3, an example of a plasma processing apparatus 1 applied to processing modules PM1 to PM7 in Figure 1 will be described. Figure 2 is a schematic cross-sectional view showing an example of a plasma processing apparatus 1. Figure 3 is an enlarged view of a portion of Figure 2.
[0023] The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, an RF power supply unit 30, an exhaust system 40, a lifter 50, and a control unit 90.
[0024] The plasma processing chamber 10 includes a substrate support section 11 and an upper electrode 12. The substrate support section 11 is located in the lower region of the plasma processing space 10s within the plasma processing chamber 10. The upper electrode 12 is located above the substrate support section 11 and functions as part of the top plate of the plasma processing chamber 10.
[0025] The substrate support section 11 supports the substrate W in the plasma processing space 10s. The substrate support section 11 includes a lower electrode 111, an electrostatic chuck 112, a ring 113 (hereinafter also referred to as the ring assembly 113), and an insulating member 115. The substrate support section 11 also includes a support section temperature control mechanism 116 for temperature control of the supported substrate W and ring 113.
[0026] The electrostatic chuck 112 is positioned on the lower electrode 111. The electrostatic chuck 112 has an upper surface including a substrate support surface 112a and a ring support surface 112b. The electrostatic chuck 112 supports the substrate W on the substrate support surface 112a. The electrostatic chuck 112 supports the inner ring 113a on the ring support surface 112b. The electrostatic chuck 112 includes an insulating member 112c, a first adsorption electrode 112d, and a second adsorption electrode 112e. The first adsorption electrode 112d and the second adsorption electrode 112e are embedded in the insulating member 112c. The first adsorption electrode 112d is located below the substrate support surface 112a. The electrostatic chuck 112 adsorbs and holds the substrate W on the substrate support surface 112a by applying a voltage to the first adsorption electrode 112d. The second adsorption electrode 112e is located below the ring support surface 112b. The electrostatic chuck 112 holds the inner ring 113a on the ring support surface 112b by adsorbing a voltage to the second adsorption electrode 112e. In the examples of Figures 2 and 3, the electrostatic chuck 112 includes a unipolar electrostatic chuck for adsorbing and holding the substrate W, and a bipolar electrostatic chuck for adsorbing and holding the inner ring 113a. However, a bipolar electrostatic chuck may be used instead of a unipolar electrostatic chuck, and a unipolar electrostatic chuck may be used instead of a bipolar electrostatic chuck.
[0027] The ring assembly 113 includes an inner ring 113a and an outer ring 113b. The inner ring 113a has an annular shape. The inner ring 113a is positioned around the substrate W on the upper surface of the peripheral edge of the lower electrode 111. The inner ring 113a improves the uniformity of plasma treatment on the substrate W. The inner ring 113a is formed of a conductive material such as silicon (Si) or silicon carbide (SiC). The inner ring 113a may also be formed of an insulating material such as quartz. The outer ring 113b has an annular shape. The outer ring 113b is positioned on the outer circumference of the inner ring 113a. The outer ring 113b protects the upper surface of the insulating member 115 from plasma, for example. The outer ring 113b is formed of an insulating material such as quartz. The outer ring 113b may also be formed of a conductive material such as silicon or silicon carbide. In the illustrated example, the inner circumference of the outer ring 113b is located inside the outer circumference of the inner ring 113a, and the outer circumference of the inner ring 113a is located outside the inner circumference of the outer ring 113b, so that the inner ring 113a and the outer ring 113b partially overlap. In other words, the outer ring 113b surrounds the inner ring 113a and is provided to overlap with the inner ring 113a below in a plan view. As a result, when the multiple support pins 521, which will be described later, move up and down, the outer ring 113b and the inner ring 113a move up and down together. The insulating member 115 is arranged to surround the lower electrode 111. The insulating member 115 is fixed to the bottom of the plasma processing chamber 10 and supports the lower electrode 111.
[0028] The support temperature control mechanism 116 controls the temperature of the substrate W and the ring assembly 113 as a whole. The support temperature control mechanism 116 is provided inside the electrostatic chuck 112 (or inside the lower electrode 111 or the insulating member 115). The support temperature control mechanism 116 can be fitted with, for example, a heater, a structure that circulates a heat exchange medium from a heat exchange medium circulation unit (not shown), or a structure that supplies heat transfer gas from a gas supply and exhaust unit (not shown).
[0029] The upper electrode 12, together with the insulating member 13, constitutes the plasma processing chamber 10. The upper electrode 12 supplies one or more processing gases from the gas supply unit 20 to the plasma processing space 10s. The upper electrode 12 includes a top plate 121 and a support 122. The lower surface of the top plate 121 defines the plasma processing space 10s. The top plate 121 is provided with a plurality of gas inlets 121a. Each of the plurality of gas inlets 121a penetrates the top plate 121 in the thickness direction (vertical direction). The support 122 detachably supports the top plate 121. A gas diffusion chamber 122a is provided inside the support 122. A plurality of gas inlets 122b extend downward from the gas diffusion chamber 122a. The plurality of gas inlets 122b communicate with each of the plurality of gas inlets 121a. The support 122 is provided with a gas supply port 122c. The upper electrode 12 supplies one or more processing gases from the gas supply port 122c to the plasma processing space 10s via the gas diffusion chamber 122a, a plurality of gas inlets 122b, and a plurality of gas inlets 121a.
[0030] An inlet / outlet 10p is provided on the side wall of the plasma processing chamber 10. The substrate W is transported between the plasma processing space 10s and the outside of the plasma processing chamber 10 via the inlet / outlet 10p. The inlet / outlet 10p is opened and closed by a gate valve G.
[0031] The gas supply unit 20 includes one or more gas sources 21 and one or more flow controllers 22. The gas supply unit 20 supplies one or more types of processing gas from each gas source 21 to the gas supply port 122c via each flow controller 22. The flow controllers 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. The gas supply unit 20 may also include one or more flow modulation devices that modulate or pulse the flow rates of one or more processing gases.
[0032] The RF power supply unit 30 includes two RF power supplies (a first RF power supply 31a and a second RF power supply 31b) and two matching units (a first matching unit 32a and a second matching unit 32b). The first RF power supply 31a supplies first RF power to the lower electrode 111 via the first matching unit 32a. The frequency of the first RF power may be, for example, 13 MHz to 150 MHz. The second RF power supply 31b supplies second RF power to the lower electrode 111 via the second matching unit 32b. The frequency of the second RF power may be, for example, 400 kHz to 13.56 MHz. A DC power supply may be used instead of the second RF power supply 31b.
[0033] The exhaust system 40 is connected to a gas exhaust port 10e, for example, located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.
[0034] The lifter 50 includes a first lifter 51 and a second lifter 52.
[0035] The first lifter 51 includes a plurality of support pins 511 and an actuator 512. The plurality of support pins 511 are inserted through holes H1 formed in the lower electrode 111 and the electrostatic chuck 112, and are retractable relative to the upper surface of the electrostatic chuck 112. By protruding relative to the upper surface of the electrostatic chuck 112, the plurality of support pins 511 support the substrate W by bringing their upper ends into contact with the lower surface of the substrate W. The actuator 512 raises and lowers the plurality of support pins 511. As the actuator 512, for example, a motor such as a DC motor, stepping motor, or linear motor, an air-driven mechanism such as an air cylinder, or a piezo actuator can be used. The first lifter 51 raises and lowers the plurality of support pins 511 when transferring the substrate W between the transport robot TR1 and the substrate support part 11.
[0036] The second lifter 52 includes a plurality of support pins 521 and an actuator 522. The support pins 521 are stepped support pins formed from cylindrical (solid rod-shaped) members. The support pins 521 have a lower pin 523 and an upper pin 524. The upper pin 524 is mounted on top of the lower pin 523. The outer diameter of the lower pin 523 is larger than the outer diameter of the upper pin 524. As a result, a stepped portion is formed by the upper end surface 523a of the lower pin 523. The lower pin 523 and the upper pin 524 are, for example, integrally molded.
[0037] The support pin 521 is inserted through a through hole H11 formed in the lower electrode 111, a through hole H12 formed in the insulating member 115, and a through hole H13 formed in the outer ring 113b, allowing it to protrude and retract relative to the upper surface of the insulating member 115 and the upper surface of the outer ring 113b. The inner diameters of the through holes H11 and H12 are slightly larger than the outer diameter of the lower pin 523. The inner diameter of the through hole H13 is slightly larger than the outer diameter of the upper pin 524 and smaller than the outer diameter of the lower pin 523.
[0038] The support pin 521 is displaceable between a standby position, a first support position, and a second support position.
[0039] The standby position is when the upper end surface 524a of the upper pin 524 is below the lower surface of the inner ring 113a. When the support pin 521 is in the standby position, the inner ring 113a and the outer ring 113b are supported on the electrostatic chuck 112 and the insulating member 115, respectively, without being lifted by the support pin 521.
[0040] The first support position is a position above the standby position. The first support position is a position where the upper end surface 524a of the upper pin 524 protrudes above the upper surface of the outer ring 113b, and the upper end surface 523a of the lower pin 523 is below the lower surface of the outer ring 113b. By moving to the first support position, the support pin 521 supports the inner ring 113a by bringing the upper end surface 524a of the upper pin 524 into contact with a recess formed on the lower surface of the inner ring 113a.
[0041] The second support position is located above the first support position. The second support position is where the upper end surface 523a of the lower pin 523 protrudes above the upper surface of the insulating member 115. By moving to the second support position, the support pin 521 supports the inner ring 113a by bringing the upper end surface 524a of the upper pin 524 into contact with the recess, and supports the outer ring 113b by bringing the upper end surface 523a of the lower pin 523 into contact with the lower surface of the outer ring 113b.
[0042] The actuator 522 raises and lowers a plurality of support pins 521. The actuator 522 may be configured similarly to the actuator 512.
[0043] When the second lifter 52 is transferring the inner ring 113a between the transport robot TR1 and the substrate support 11, it lifts the inner ring 113a by moving the multiple support pins 521 to the first support position. When the second lifter 52 is transferring both the inner ring 113a and the outer ring 113b between the transport robot TR1 and the substrate support 11, it lifts both the inner ring 113a and the outer ring 113b by moving the multiple support pins 521 to the second support position. Alternatively, when transferring the outer ring 113b between the transport robot TR1 and the substrate support 11 without the inner ring 113a, it also lifts the outer ring 113b by moving the multiple support pins 521 to the second support position.
[0044] The control unit 90 controls each part of the plasma processing apparatus 1. The control unit 90 includes, for example, a computer 91. The computer 91 includes, for example, a CPU 911, a storage unit 912, and a communication interface 913. The CPU 911 is configured to perform various control operations based on a program stored in the storage unit 912. The storage unit 912 includes at least one memory type selected from a group consisting of auxiliary storage devices such as RAM, ROM, HDD (Hard Disk Drive), and SSD (Solid State Drive). The communication interface 913 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network). The control unit 90 may be provided separately from the control unit CU, or it may be included in the control unit CU.
[0045] [Ring storage module] Referring to Figures 4 and 5, an example of a ring storage module RSM included in the substrate processing system PS of Figure 1 will be described. Figure 4 is a first schematic side cross-sectional view showing the ring storage module RSM. Figure 5 is a second schematic side cross-sectional view of the ring storage module RSM viewed from a direction perpendicular to Figure 4.
[0046] The ring storage module RSM has a chamber 70 mounted on a frame 60, with a machine room 81 above the chamber 70. The chamber 70 has an exhaust port 71 at its bottom to which an exhaust section 72 is connected, allowing the inside of the chamber 70 to be depressurized by the exhaust section 72. The chamber 70 also has a gas supply section (not shown), and the internal pressure can be regulated by supplying an inert gas (e.g., N2 gas) through the gas supply section. The machine room 81 is, for example, under atmospheric pressure.
[0047] Chamber 70 includes a storage 75 inside that can hold a plurality of inner rings 113a and a plurality of outer rings 113b. The storage 75 has a stage 73 and a basket 74 provided below the stage 73. The storage 75 can be raised and lowered by a ball screw 76. The machine room 81 has a line sensor 82 that detects the position and orientation of consumable members and a motor 77 that drives the ball screw 76. A window 84 made of quartz or the like is provided in the partition wall between Chamber 70 and the machine room 81 so that the line sensor 82 can receive light from a light-emitting unit 83, which will be described later.
[0048] The stage 73 supports the inner ring 113a or the outer ring 113b. The stage 73 has a non-rotating light-emitting section 83 facing the line sensor 82. The stage 73 is rotatable in the θ direction and rotates the supported inner ring 113a or outer ring 113b to a predetermined orientation. In other words, the stage 73 and the line sensor 82 constitute an alignment device that aligns the inner ring 113a or the outer ring 113b. In the alignment, the orientation flat (OF) or notch of the inner ring 113a or the outer ring 113b is aligned to a predetermined orientation. Alternatively, the center position of the inner ring 113a or the outer ring 113b may be aligned during the alignment.
[0049] The line sensor 82 detects the amount of light emitted from the light-emitting unit 83 and outputs the detected amount of light to the control unit CU. The line sensor 82 is configured to enable detection of the inner ring 113a and the outer ring 113b, and to align each of them. The control unit CU detects the orientation flat of the inner ring 113a or the outer ring 113b by utilizing the fact that the detected amount of light changes depending on the presence or absence of an orientation flat. The control unit CU may also be configured to align the inner ring 113a based on the detection result of the inner part of the line sensor 82, and to align the outer ring 113b based on the detection result of the outer part of the line sensor 82. The line sensor 82 can be a light-receiving element such as a CCD (Charge Coupled Device), CMOS (Complementary Metal Oxide Semiconductor), or photodiode.
[0050] The ring storage module RSM may also use a position detection sensor that includes an inner circumference sensor for detecting the position of the inner circumference of the inner ring 113a or the outer ring 113b, and an outer circumference sensor for detecting the position of the outer circumference of the inner ring 113a or the outer ring 113b. Alternatively, the ring storage module RSM may use other optical sensors or a camera instead of the line sensor 82. In this case, the control unit CU calculates the position information of the inner ring 113a or the outer ring 113b based on the image captured by the camera, for example, by using image processing technology.
[0051] The basket 74 is located at the bottom of the stage 73. One or more cassettes 78 are placed inside the basket 74. The cassette 78 is a storage container that houses the inner ring 113a or the outer ring 113b and is removable from the basket 74. The cassette 78 is open on the front side of the ring storage module RSM. The basket 74 holds multiple cassettes 78 spaced apart in the vertical direction.
[0052] The storage unit 75 has a stage 73 and a basket 74, as well as guides 79 on its sides supported by a ball screw 76. The ball screw 76 connects the top and bottom surfaces of the chamber 70, passes through the top surface of the chamber 70, and is connected to a motor 77 in the machine room 81. The passage through the top surface of the chamber 70 is sealed to allow the ball screw 76 to rotate. The ball screw 76 is rotated by the motor 77, which moves the storage unit 75 vertically (in the Z-axis direction).
[0053] Furthermore, the chamber 70 is equipped with a temperature control unit 61 for adjusting the temperature of the inner ring 113a or the outer ring 113b. The ring storage module RSM has the stage 73, the basket 74, and the temperature control unit 61 arranged vertically relative to the vacuum transfer module TM. This allows the transfer robot TR1 of the vacuum transfer module TM to easily access each height position of the ring storage module RSM.
[0054] The temperature control unit 61 is equipped with a first temperature control device 62 and a second temperature control device 63 to separately control the temperature of one inner ring 113a and one outer ring 113b. For example, the first temperature control device 62 is configured to control the temperature of the inner ring 113a, and the second temperature control device 63 is configured to control the temperature of the outer ring 113b. Depending on the processing conditions, the temperature control unit 61 may control the temperature of the outer ring 113b with the first temperature control device 62, or control the temperature of the inner ring 113a with the second temperature control device 63. Furthermore, the temperature control unit 61 is not limited to being composed of multiple devices, but may be composed of a single device. The temperature control unit 61 may be configured to be movable in the vertical direction, similar to the storage 75.
[0055] The first temperature control device 62 is equipped with a mounting table 621 on which the inner ring 113a is placed in an internal temperature control chamber. A shutter 622 that can open and close the temperature control chamber is provided on the side of the housing 624 of the first temperature control device 62. A temperature control mechanism 623 is provided on the inner surface of the temperature control chamber of the first temperature control device 62, or inside the housing 624 or mounting table 621. The second temperature control device 63 is equipped with a mounting table 631 on which the outer ring 113b is placed in an internal temperature control chamber. A shutter 632 that can open and close the temperature control chamber is provided on the side of the housing 634 of the second temperature control device 63. A temperature control mechanism 633 is provided on the inner surface of the temperature control chamber of the second temperature control device 63, or inside the housing 634 or mounting table 621.
[0056] The temperature control mechanisms 623 and 633 may, for example, be a heater for heating the ring 113, or a structure that supplies temperature-controlled gas toward the ring 113 for heating or cooling the ring 113, in conjunction with an exhaust mechanism (not shown). Furthermore, the mounting bases 621 and 631 having the temperature control mechanisms 623 and 633 may be configured to circulate a temperature-controlled heat exchange medium internally for heating or cooling the ring 113. The temperature control mechanisms 623 and 633 adjust the temperature of the ring 113 to within 10°C of the temperature of the substrate support section 11 of the processing module PM1 to PM7 into which the ring 113 is loaded. Alternatively, if the temperature control mechanisms 623 and 633 are mechanisms for circulating a heat exchange medium, the temperature of the ring 113 may be adjusted to within 10°C of the temperature of the heat exchange medium circulating in the flow path of the substrate support section 11 of the processing module PM1 to PM7 into which the ring 113 is loaded. For example, the temperature control mechanisms 623 and 633 are adjusted to a target temperature set by the control unit CU within the range of -100 to 300°C. For example, if all processing modules PM1 to PM7 are to be temperature-controlled within a range of approximately 40°C to 300°C, the temperature control mechanisms 623 and 633 may consist only of heaters. The housings 624 and 634 are sized to accommodate only one ring 113 (either the inner ring 113a or the outer ring 113b), thereby speeding up the temperature adjustment process.
[0057] The first temperature control device 62 and the second temperature control device 63 may be equipped with a separate gas supply and exhaust mechanism (not shown) to supply and exhaust gas to the temperature control chamber in order to remove deposits such as reaction products attached to the inner ring 113a or outer ring 113b used in processing modules PM1 to PM7, in addition to the temperature control mechanisms 623 and 633. That is, the gas supplied to the temperature control chamber by the gas supply and exhaust mechanism exhausts deposits that have volatilized by thermal decomposition or chemical reactions from the temperature control chamber. If a structure for supplying and exhausting temperature control gas is applied as the temperature control mechanisms 623 and 633, the deposits may be discharged by supplying and exhausting this temperature control gas.
[0058] The ring storage module RSM is detachably connected to the vacuum transfer module TM via a gate valve G. The upper fork FK1 and lower fork FK2 of the transfer robot TR1 of the vacuum transfer module TM can enter the chamber 70 via the gate valve G. The upper fork FK1 and lower fork FK2 are used to load and unload the inner ring 113a or outer ring 113b to and from the cassette 78, to and from the stage 73, and to and from the temperature control unit 61.
[0059] The door 80 is opened and closed, for example, when removing the cassette 78 from inside the chamber 70, or when installing the cassette 78 inside the chamber 70.
[0060] The light-emitting unit 85 and the count detection sensor 86 detect the number of inner rings 113a or outer rings 113b placed on the cassette 78 during the movement of the storage 75. The light-emitting unit 85 is, for example, an LED (Light Emitting Diode), a semiconductor laser, etc. The count detection sensor 86 detects the amount of light emitted from the light-emitting unit 85 and outputs the detected amount of light to the control unit CU. Based on the detected amount of light, the control unit CU detects the number of inner rings 113a or outer rings 113b by measuring the number of times the light emitted from the light-emitting unit 85 has been blocked. The count detection sensor 86 can be, for example, a CCD, CMOS, photodiode, phototransistor, etc.
[0061] The control unit (CU) recognizes the arrangement, number, and status (new, used, etc.) of the inner rings 113a and outer rings 113b stored in each cassette 78 of the ring storage module (RSM). The control unit (CU) also determines the need to replace the inner rings 113a and outer rings 113b based on triggers such as user instructions, the number of board processing cycles, the quality of the board (W), sensor values from each processing module (PM1-PM7), and the occurrence of errors. If it determines that replacement is necessary, the control unit (CU) retrieves the ring 113 (inner ring 113a or outer ring 113b) from the processing module to be replaced and uses the replacement ring 113 stored in the ring storage module (RSM).
[0062] Furthermore, the substrate processing system PS is equipped with a temperature control unit 61 in the ring storage module RSM, which is used to adjust the temperature of the rings 113 (inner ring 113a and outer ring 113b) before transporting them to each processing module PM1 to PM7. This reduces the time required to adjust the temperature of the rings 113 in each processing module PM1 to PM7, thereby improving the overall productivity of the substrate processing system PS. When setting the rings 113 in each processing module PM1 to PM7, the control unit CU manages the transport timing, the position of the rings 113 to be transported, the temperature (temperature adjustment period), etc., and places the rings 113 in the designated processing module.
[0063] [Transportation Method] Figure 6 is a flowchart of the first example of the transport method. Next, with reference to Figure 6, a transport method for placing the ring 113 onto the desired processing module will be described. In the following, the case of transporting the ring 113 between the ring storage module RSM and the processing module PM1 will be described. The same method can be used when the processing module to be replaced is one of the other processing modules PM2 to PM7, as when the processing module to be replaced is processing module PM1.
[0064] The first example of a transport method involves replacing both the edge ring FR and the covering ring CR that constitute the ring 113 in the substrate processing system PS. The edge ring FR corresponds to the inner ring 113a shown in Figure 3. The covering ring CR corresponds to the outer ring 113b shown in Figure 3. The covering ring CR is an example of the first ring, and the edge ring FR is an example of the second ring.
[0065] The first example of the transport method is initiated, for example, when both the edge ring FR and the covering ring CR are to be replaced. The first example of the transport method is performed when there is no substrate W in the processing module PM1 and when the loading / unloading of substrate W and substrate processing are stopped.
[0066] The first example of the transport method includes steps S101 to S117. Steps S101 to S117 are carried out by the control unit CU controlling each part of the substrate processing system PS.
[0067] In process S101, the control unit CU adjusts the temperature of the replacement edge ring FR and the replacement covering ring CR. The replacement edge ring FR may be new (unused) or used but not heavily worn, and the replacement covering ring CR may be new (unused) or used but not heavily worn.
[0068] The control unit CU may determine in process S101 whether it is necessary to replace the ring 113 and whether it is possible to replace the ring 113. The necessity of replacing the ring 113 can be determined based on the trigger described above. Whether it is possible to replace the ring is determined by the control unit CU based on the presence or absence of the substrate W in the processing module PM1 to be replaced, the transport schedule of the transport robot TR1, etc. If it is determined that there is a substrate W in the processing module PM1 or the transport robot TR1, the control unit CU may transport the substrate W from the vacuum transport module TM to the load lock modules LL1 to LL3 using the transport robot TR1, and then stop the transport of the substrate W by the transport robot TR1.
[0069] Figure 7 is a flowchart showing an example of the procedure in process S101. In process S101, the control unit CU first determines whether or not to replace the ring 113 (whether replacement is necessary and whether replacement is possible) (step S1011). If the ring 113 is not to be replaced (step S1011: NO), the control unit CU repeats this monitoring. On the other hand, if the ring 113 is to be replaced (step S1011: YES), the process proceeds to step S1012.
[0070] In step S1012, the control unit CU selects the ring to be used from among the replacement edge rings FR and replacement cover rings CR stored in each cassette 78 of the ring storage module RSM. Once the replacement edge rings FR and replacement cover rings CR are selected, the control unit CU proceeds to the operation of temperature adjustment of those rings using the temperature adjustment unit 61.
[0071] In step S1013, the control unit CU operates the transport robot TR1 based on the designated position of the replacement edge ring FR, for example using the upper fork FK1 to retrieve the replacement edge ring FR and load it into the first temperature control device 62. In step S1014, the control unit CU places the replacement edge ring FR on the mounting table 621 of the first temperature control device 62, closes the shutter section 622, and then uses the temperature control mechanism 623 to adjust the temperature of the replacement edge ring FR to the target temperature. The target temperature is, for example, the same temperature as the substrate support section 11 of the processing module PM1 to be replaced (the temperature inside the plasma processing chamber 10). This ensures that the replacement edge ring FR is properly temperature-controlled before being transported to the processing module PM1.
[0072] Similarly, in step S1015, the control unit CU operates the transport robot TR1 based on the specified position of the replacement covering CR, for example using the lower fork FK2 to retrieve the replacement covering CR and load it into the second temperature control device 63. In step S1016, the control unit CU places the replacement covering CR on the mounting table 631 of the second temperature control device 63, closes the shutter section 632, and then uses the temperature control mechanism 633 to adjust the temperature of the replacement covering CR to the target temperature. The target temperature is set to be the same as the target temperature of the replacement edge ring FR of the first temperature control device 62. As a result, the replacement covering CR is also appropriately temperature-controlled before being transported to the processing module PM1.
[0073] Furthermore, the control unit CU measures the temperature adjustment period during the temperature adjustment of the replacement edge ring FR and the replacement covering ring CR, and monitors whether the measured temperature adjustment period has reached a preset target period (step S1017). When the temperature adjustment period exceeds the target period, the control unit CU recognizes that the temperature adjustment of the replacement edge ring FR and the replacement covering ring CR has been completed and permits removal from the temperature adjustment unit 61 (step S1018). Note that the completion of the temperature adjustment of the replacement edge ring FR and the replacement covering ring CR may be recognized by various methods. For example, temperature sensors (not shown) may be installed in the first temperature adjustment device 62 and the second temperature adjustment device 63, and the completion of temperature adjustment may be recognized based on the temperature of the replacement edge ring FR and the replacement covering ring CR detected by the temperature sensors reaching the target temperature. The target temperature is set to be within 10°C of the temperature of the substrate support section 11 of the processing module into which the ring 113 is to be introduced, or within 10°C of the temperature of the heat exchange medium flowing through the flow path of the substrate support section 11 of the processing module into which the ring 113 is to be introduced.
[0074] While the control unit CU is performing temperature adjustments for the replacement edge ring FR and the replacement covering ring CR by the temperature adjustment unit 61, it may also perform other processes in the transport method or transport the substrate W between other processing modules PM2 to PM7 or load lock modules LL1 to LL3. This allows the substrate processing system PS to further improve the overall efficiency of the operation.
[0075] Furthermore, it is preferable to perform temperature adjustment of the replacement edge ring FR and the replacement covering ring CR as quickly as possible when the need to replace the ring 113 is determined. This makes it possible to load the temperature-adjusted replacement edge ring FR and replacement covering ring CR into the processing module PM1 even earlier. For this reason, when the control unit CU determines the need to replace the ring 113, it may prioritize the loading of the replacement edge ring FR and replacement covering ring CR into the temperature adjustment unit 61 by the transport robot TR1. For example, even if it is planned to transport the substrate W from the load lock modules LL1 to LL3 to the processing modules PM2 to PM7, the control unit CU may prioritize process S101 (perform an interrupt process) to transport and adjust the temperature of the ring 113. Also, as will be described later, when loading the ring 113 into the processing module PM1, the replacement covering ring CR is loaded first, followed by the replacement edge ring FR. For this reason, the control unit CU may load the replacement covering ring CR into the temperature adjustment unit 61 first and start temperature adjustment.
[0076] Returning to Figure 6, in step S102, the control unit CU uses the transport robot TR1 to remove the edge ring FR (hereinafter also referred to as the used edge ring FR) that was placed on the substrate support section 11 of the processing module PM1 and used for substrate processing from the processing module PM1.
[0077] In process S103, the control unit CU uses the transport robot TR1 to transfer the used edge rings FR, which were unloaded from the processing module PM1 in process S102, into the ring storage module RSM. At this time, the transport robot TR1 stores the used edge rings FR into one of the empty cassettes 78 among the multiple cassettes 78.
[0078] In step S104, the control unit CU aligns the replacement covering ring CR using the stage 73 (see Figure 5) of the ring storage module RSM. Therefore, the temperature adjustment of the replacement covering ring CR by the temperature adjustment unit 61 is completed at least before the start of step S104. The replacement covering ring CR is first loaded into the processing module PM1 and its temperature is also adjusted within the processing module PM1. For this reason, the target temperature for adjusting the replacement covering ring CR may be lower than the target temperature for adjusting the replacement edge ring FR.
[0079] During alignment, the control unit CU uses the transport robot TR1 to retrieve the replacement covering ring CR, which has been temperature-controlled, from the second temperature control device 63 of the ring storage module RSM, and place the replacement covering ring CR on the stage 73 of the same ring storage module RSM. As described above, the alignment of the replacement covering ring CR is performed by rotating the stage 73 under the monitoring of the line sensor 82 while aligning the orientation flat of the replacement covering ring CR to a predetermined orientation.
[0080] In process S105, the control unit CU uses the transport robot TR1 to remove the replacement covering ring CR, which was aligned in process S104, from the stage 73 and unload it from the ring storage module RSM.
[0081] In step S106, the control unit CU, while holding the replacement covering CR that has been unloaded by the transport robot TR1, unloads the covering CR that was used for substrate processing (hereinafter also referred to as the used covering CR) from the processing module PM1 by placing it on the substrate support section 11 of the processing module PM1. At this time, for example, the transport robot TR1 holds the replacement covering CR with its upper fork FK1 while holding the used covering CR with its lower fork FK2. However, the holding configuration by the transport robot TR1 may be reversed.
[0082] In process S107, the control unit CU transports the replacement covering CR, which is being held by the transport robot TR1, into the processing module PM1. When the replacement covering CR is held by the upper fork FK1 and the used covering CR is held by the lower fork FK2, the replacement covering CR is positioned above the used covering CR. Therefore, even if particles or other debris attached to the used covering CR fall, it is possible to suppress them from adhering to the replacement covering CR.
[0083] In process S108, the control unit CU transports the used covering CR, which has been unloaded from the processing module PM1 by the transport robot TR1, into the ring storage module RSM. At this time, the transport robot TR1 stores the used covering CR in one of the empty cassettes 78 among the multiple cassettes 78.
[0084] In step S109, the control unit CU aligns the replacement edge ring FR using the stage 73 (see Figure 5) of the ring storage module RSM. Therefore, the temperature adjustment of the replacement edge ring FR by the temperature adjustment unit 61 is completed before the replacement edge ring FR is removed from the temperature adjustment unit 61 and aligned (before step S109).
[0085] The control unit CU uses the transport robot TR1 to retrieve the replacement edge ring FR, which has been temperature-controlled, from the first temperature control device 62 of the ring storage module RSM, and place the replacement edge ring FR on the stage 73 of the same ring storage module RSM. The positioning of the replacement edge ring FR is performed in the same way as for the replacement covering ring CR, by rotating the stage 73 under the monitoring of the line sensor 82 and aligning the orientation flat of the replacement edge ring FR to a predetermined orientation.
[0086] In process S110, the control unit CU uses the transport robot TR1 to remove the replacement edge ring FR, which was aligned in process S109, from the stage 73 and unload it from the ring storage module RSM.
[0087] In process S111, the control unit CU uses the transport robot TR1 to load the replacement edge ring FR, which has been unloaded from the ring storage module RSM, into the processing module PM1.
[0088] In step S112, the control unit CU operates the transport robot TR1 to detect the position of the replacement edge ring FR placed on the substrate support section 11 using the position detection sensor S1 of the upper fork FK1 (or the position detection sensor S2 of the lower fork FK2).
[0089] In step S113, the control unit CU determines whether there is any misalignment of the replacement edge ring FR based on the detected position of the replacement edge ring FR. If the control unit CU determines that there is a misalignment of the replacement edge ring FR (step S113: NO), it proceeds to step S114. If the control unit CU determines that there is no misalignment of the replacement edge ring FR (step S113: YES), it proceeds to step S115.
[0090] In step S114, the control unit CU uses the transport robot TR1 to unload the replacement edge ring FR from the processing module PM1. After step S115, the control unit CU returns to step S112, where the transport robot TR1 corrects the position of the replacement edge ring FR unloaded from the processing module PM1 in step S115 and loads it back into the processing module PM1.
[0091] In step S115, the control unit CU initiates the electrostatic chuck 112 to adsorb and hold the replacement edge ring FR.
[0092] In step S116, the control unit CU adjusts the temperature of the ring 113 (replacement edge ring FR) using the support temperature adjustment mechanism 116 of the substrate support unit 11. According to the above processing flow, the replacement edge ring FR is pre-temperature-adjusted by the temperature adjustment unit 61. Therefore, the control unit CU can significantly shorten the execution period of step S116.
[0093] In step S117, the control unit CU completes the sequence of the ring 113 transport method. Subsequently, the control unit CU loads the substrate W into the processing module PM1 having a replacement edge ring FR and a replacement covering ring CR, enabling the substrate processing to be performed successfully.
[0094] As described above, according to the first example of transport method, the temperature of the ring 113 (replacement edge ring FR, replacement cover ring CR) is adjusted by the temperature adjustment unit 61 before it is brought into the processing module PM1. This allows the substrate processing system PS to reduce the time required to adjust the temperature of the ring 113 in the processing module PM1. As a result, the substrate processing system PS can quickly start substrate processing by the processing module PM1, thereby increasing the productivity of substrate processing. Furthermore, as described above, the substrate processing system PS adjusts the temperature of the ring 113 to within 10°C of the temperature of the substrate support unit 11 or the temperature of the heat exchange medium flowing through the flow path of the substrate support unit 11, and then places the ring 113 on the electrostatic chuck 112 of the substrate support unit 11 for electrostatic adsorption. This reduces friction caused by differences in thermal expansion and contraction due to the large temperature difference between the ring 113 and the electrostatic chuck 112 during electrostatic adsorption, and suppresses particles caused by friction.
[0095] Note that the order of some of the steps S101 to S117 shown in Figure 6 may be changed in the transport method.
[0096] For example, process S106 may be performed between process S102 and process S103. Processes S106 and S108 may be performed between process S103 and process S104, or between process S104 and process S105. Alternatively, processes S106 and S108 may be performed in parallel with process S104. Process S108 may be performed between process S106 and process S107.
[0097] Furthermore, if the temperature adjustment of the replacement edge ring FR by the temperature adjustment unit 61 is completed, the timing of the execution of process S109 is not particularly limited. Process S109 may be performed between process S105 and process S106, between process S106 and process S107, between process S107 and process S108, or between process S108 and process S109. Alternatively, process S109 may be performed in parallel with at least one of processes S106, S107, and S108.
[0098] Furthermore, some of the steps S101 to S117 shown in Figure 6 may be omitted. For example, if the edge ring FR is not held by the electrostatic chuck 112, step S115 may be omitted.
[0099] Furthermore, additional steps may be added to steps S101 to S117 shown in Figure 6. For example, after the transport robot TR1 loads the replacement covering CR into the processing module PM1 in step S107, it may be possible to determine whether or not there is a misalignment in the replacement covering CR and perform position correction of the replacement covering CR, similar to steps S112, S113, and S114.
[0100] Furthermore, in the above embodiment, an example was described in which a replacement edge ring FR or replacement covering ring CR is temperature-controlled, aligned, and then transported to the processing module. However, the substrate processing system PS and transport method may also be configured in which the replacement edge ring FR or replacement covering ring CR is aligned, then transported to the temperature control unit 61 for temperature control, and then transported to the processing module. However, the latter involves loading and unloading the product into and out of the temperature control unit 61 after alignment, so the procedure of temperature control by the temperature control unit 61, alignment, and transport to the processing module is more preferable.
[0101] Furthermore, if the control unit CU determines that the replacement edge ring FR is misaligned, it does not need to remove the replacement edge ring FR from the processing module PM1 in step S114. In other words, the control unit CU may use the transport robot TR1 to correct the misalignment of the replacement edge ring FR within the processing module PM1 and place it on the substrate support section 11.
[0102] Furthermore, the substrate processing system PS and transport method are not limited to the configuration in which two components (edge ring FR and covering ring CR) are transported as a ring 113 as described above, but may also be configured to transport only one ring 113. The substrate processing system PS and transport method may also be configured to simultaneously adjust the temperature of the two rings in the temperature adjustment unit 61, and to simultaneously transport them from the temperature adjustment unit 61 to the processing module to be replaced. The substrate processing system and transport method may also adjust the temperature of the two rings at different timings using a single device in the temperature adjustment unit 61 and transport them separately to the processing module to be replaced.
[0103] Furthermore, the temperature control unit 61 may be provided at a different location in the ring storage module RSM. For example, the temperature control unit 61 may be provided vertically above the stage 73, or between the stage 73 and the basket 74. The temperature control unit 61 may also be integrated with the alignment device by providing a temperature control mechanism within the stage 73, for example.
[0104] Furthermore, the substrate processing system PS and transport method may be configured to include a temperature control unit 61 at a different location from the ring storage module RSM, and to transport the ring 113 to the temperature control unit 61 by the transport robot TR1. The temperature control unit 61, which is provided separately from the ring storage module RSM, may be connected to the outside of the vacuum transport module TM, or it may be provided inside the vacuum transport module TM. Alternatively, the temperature control unit 61 may be provided in the load lock modules LL1 to LL3. In other words, the substrate processing system PS can transport the ring 113 to the load lock modules LL1 to LL3 and adjust its temperature by providing a temperature control mechanism in the load lock modules LL1 to LL3.
[0105] Figure 8 is a flowchart of the second example of the transport method. The second example of the transport method is also a method for replacing both the edge ring FR and the covering ring CR in the substrate processing system PS. The second example of the transport method is performed when there is no substrate W in the processing module PM1 and when the loading / unloading of substrate W and substrate processing are stopped. The second example of the transport method will also be described in the case where the ring 113 is transported between the ring storage module RSM and the processing module PM1. The same method can be used when the processing module to be replaced is one of the other processing modules PM2 to PM7, as when the processing module to be replaced is processing module PM1.
[0106] The second example of the transport method includes steps S201 to S217. Steps S201 to S217 are carried out by the control unit CU controlling each part of the substrate processing system PS.
[0107] Processes S201 to S204 may be the same as processes S101 to S104.
[0108] In process S205, the control unit CU uses the transport robot TR1 to unload the used covering CR from the processing module PM1.
[0109] In process S206, the control unit CU uses the transport robot TR1 to transfer the used covering CR, which was unloaded from the processing module PM1 in process S205, into the ring storage module RSM.
[0110] In process S207, the control unit CU uses the transport robot TR1 to remove the replacement covering ring CR, which was aligned in process S204, from the stage 73 and unload it from the ring storage module RSM.
[0111] In step S208, the control unit CU aligns the replacement edge ring FR using the stage 73 (see Figure 5) of the ring storage module RSM. Therefore, the temperature adjustment of the replacement edge ring FR by the temperature adjustment unit 61 is completed before the replacement edge ring FR is removed from the temperature adjustment unit 61 and aligned (before step S208).
[0112] In process S209, the control unit CU uses the transport robot TR1 to unload the replacement edge ring FR, which was aligned in process S209, from the ring storage module RSM.
[0113] In process S210, the control unit CU uses the transport robot TR1 to load the replacement covering CR, which has been held, into the processing module PM1.
[0114] Processes S211 to S217 may be the same as processes S111 to S117.
[0115] As described above, the transport method in the second example also improves the productivity of substrate processing by adjusting the temperature of the rings 113 (replacement edge ring FR, replacement covering ring CR) using the temperature adjustment unit 61 before transporting them to the processing module PM1. In particular, in the transport method in the second example, the transport robot TR1 does not simultaneously hold the used edge ring FR, used covering ring CR, and replacement edge ring FR, replacement covering ring CR. Therefore, the adhesion of particles to the replacement edge ring FR and replacement covering ring CR can be suppressed.
[0116] In addition, in the second example of the transport method, similar to the first example, the order of some of the steps S201 to S217 shown in Figure 8 may be changed, some steps may be omitted, or other steps may be added.
[0117] For example, steps S205 and S206 may be performed between steps S202 and S203, or between steps S203 and S204. Also, for example, if the edge ring FR is not held by the electrostatic chuck 112, step S216 may be omitted. For example, after the transport robot TR1 loads the replacement covering CR into the processing module PM1 in step S210, if there is a misalignment of the replacement covering CR, position correction of the replacement covering CR may be performed, similar to steps S212, S213, and S214.
[0118] Figure 9 is a flowchart of the third example of the transport method. The third example of the transport method involves heating the edge ring FR used in processing modules PM1 to PM7 in the temperature control unit 61 to remove deposits such as reaction products attached to the ring, and returning the edge ring FR (hereinafter also referred to as the improved edge ring FR) to processing modules PM1 to PM7. The control unit CU starts the third example of the transport method based on triggers such as user instructions, the number of substrate processing cycles, the quality of the substrate W, sensor values from each processing module PM1 to PM7, and the occurrence of errors. In this case, the control unit CU identifies the processing module to which the edge ring FR will be processed. The third example of the transport method will also be described in the case where the edge ring FR is transported between the ring storage module RSM and processing module PM1. The same method can be used when the processing module is one of the other processing modules PM2 to PM7.
[0119] The third example of the transport method includes steps S301 to S312 shown in Figure 9. Steps S301 to S312 are carried out by the control unit CU controlling each part of the substrate processing system PS.
[0120] In process S301, the control unit CU uses the transport robot TR1 to remove the used edge ring FR (edge ring FR with deposits attached) that was placed on the substrate support section 11 of the processing module PM1 and used for substrate processing from the processing module PM1.
[0121] In process S302, the control unit CU transports the used edge rings FR, which have been unloaded from the processing module PM1 by the transport robot TR1, into the temperature control unit 61 (for example, the first temperature control device 62) of the ring storage module RSM.
[0122] In step S303, the control unit CU heats and adjusts the temperature of the used edge ring FR that has been brought in by the temperature adjustment unit 61. The removal of deposits by the temperature adjustment unit 61 can be carried out by well-known methods such as raising the temperature of the edge ring FR to a temperature at which deposits can be removed (for example, heating the edge ring FR to about 300°C), or supplying a gas that reacts with the deposit (including a temperature adjustment gas) to the temperature adjustment chamber. In addition to the temperature adjustment mechanisms 623 and 633, the temperature adjustment unit 61 may also employ configurations such as supplying purge gas by a purge gas supply unit (not shown) or generating plasma in the temperature adjustment chamber by a plasma generation unit (not shown) for the purpose of removing deposits. This ensures that deposits adhering to the edge ring FR are effectively removed. In particular, if the temperature adjustment unit 61 has a gas exhaust configuration, volatile substances of the deposits generated in the temperature adjustment chamber can be smoothly discharged, and an edge ring FR with reduced deposits (hereinafter also referred to as an improved edge ring FR) can be obtained.
[0123] After the deposit removal, the temperature control unit 61 proceeds to the step of temperature-adjusting the improved edge ring FR as a preliminary step before returning the improved edge ring FR to the processing module PM1. If the improved edge ring FR is hot due to the deposit removal, the temperature control unit 61 may supply and exhaust a temperature-adjusted gas such as an inert gas to the temperature control chamber, or circulate a temperature-adjusted heat exchange medium inside the mounting tables 621 and 631 on which the ring 113 is placed to promote heat dissipation from the improved edge ring FR. Both may be done simultaneously. The temperature control unit 61 may also simply control the heating of the improved edge ring FR to stop. Alternatively, it may simply supply an untemperature-adjusted inert gas to the temperature control chamber. In this case, the target temperature of the improved edge ring FR may be within 10°C of the temperature of the substrate support section 11 of the processing module into which the ring 113 is loaded, or within 10°C of the temperature of the heat exchange medium flowing through the flow path of the substrate support section 11 of the processing module into which the ring 113 is loaded.
[0124] In process S304, the control unit CU uses the transport robot TR1 to remove the temperature-controlled improved edge ring FR from the temperature control unit 61, place the improved edge ring FR on the stage 73 of the same ring storage module RSM, and perform alignment (positioning) of the improved edge ring FR.
[0125] Steps S305 to S312 may be the same as steps S110 to S117 shown in Figure 6.
[0126] As described above, the third example of the transport method can increase the productivity of substrate processing by removing deposits from the ring 113 (edge ring FR) and adjusting the temperature using the temperature control unit 61. As a result, the substrate processing system PS does not need to perform the process of removing deposits from the edge ring FR within the processing modules PM1 to PM7. Therefore, contamination (such as particle scattering) that occurs in the processing modules PM1 to PM7 due to deposit removal can be avoided, and the quality of substrate processing can be further improved.
[0127] In addition, the transport method in the third example, like the transport method in the first example, may have some of the steps S301 to S312 shown in Figure 9 rearranged, some steps may be omitted, or other steps may be added. For example, step S304 may be performed between steps S301 and S302. Also, for example, if the edge ring FR is not held by the electrostatic chuck 112, step S310 may be omitted.
[0128] Figure 10 is a schematic cross-sectional view showing a plasma processing apparatus 1A according to another embodiment. Figure 11 is a schematic plan view showing a substrate processing system PS having this plasma processing apparatus 1A. As shown in Figures 10 and 11, the substrate processing system PS according to the other embodiment differs from the above embodiment in that another ring 220 is placed on the substrate support portion 11 of the processing modules PM1 to PM7 (plasma processing apparatus 1A). Other configurations may be the same as those of the plasma processing apparatus 1 in Figures 2 and 3.
[0129] The plasma processing apparatus 1A has a substrate support portion 16 in the plasma processing space 10s that supports the substrate W. The substrate support portion 16 is supported by a support portion 17 formed of an insulating material such as quartz. The support portion 17 extends upward from the bottom of the plasma processing chamber 10. The support portion 17 has a cylindrical shape.
[0130] The substrate support portion 16 has a first region 161 and a second region 162. The first region 161 supports the substrate W. The first region 161 is a substantially circular region in plan view. The first region 161 may include a base 18 and an electrostatic chuck 19. The first region 161 may be composed of a part of the base 18 and a part of the electrostatic chuck 19. The base 18 is formed of a conductive material such as aluminum. The base 18 has a substantially disc shape. The base 18 constitutes the lower electrode.
[0131] The substrate support section 16 comprises a main body section 2 and a ring assembly (ring) 220. The main body section 2 comprises a base 18 and an electrostatic chuck 19. The main body section 2 comprises a substrate support region 2a for supporting the substrate W, an annular region 2b for supporting the ring assembly 220, and a side wall 2c extending vertically between the substrate support region 2a and the annular region 2b. The annular region 2b surrounds the substrate support region 2a. The annular region 2b is located lower than the substrate support region 2a. Therefore, the upper end of the side wall 2c is connected to the substrate support region 2a, and the lower end of the side wall 2c is connected to the annular region 2b.
[0132] A flow path 18f (support section temperature control mechanism 116) is formed within the base 18. The flow path 18f is a flow path through which a heat exchange medium is passed. As the heat exchange medium, a liquid refrigerant or a refrigerant that cools the base 18 by vaporizing the liquid refrigerant (e.g., Freon) is used. A heat exchange medium supply device (e.g., chiller unit) is connected to the flow path 18f. The supply device is located outside the plasma processing chamber 10. The heat exchange medium is supplied to the flow path 18f from the supply device. The heat exchange medium supplied to the flow path 18f is returned to the supply device.
[0133] The electrostatic chuck 19 is mounted on the base 18. When the substrate W is processed in the plasma processing chamber 10, it is placed on the first region 161 and on the electrostatic chuck 19.
[0134] The second region 162 encircles the first region 161 radially outward and surrounds the first region 161. The second region 162 is substantially ring-shaped in plan view. The ring assembly 220 is placed on the second region 162. The second region 162 may include the base 18. The second region 162 may also include the electrostatic chuck 19. The second region 162 may consist of another part of the base 18 and another part of the electrostatic chuck 19. The substrate W is placed within the region enclosed by the ring assembly 220 and on the electrostatic chuck 19.
[0135] In the second region 162 of the main body 2, a plurality (for example, three) of through holes 162h are formed, extending vertically between the annular region 2b and the lower surface 2d of the main body 2. The number of through holes 162h is the same as the number of lift pins 53 of the second lifter 52A, which will be described later.
[0136] The electrostatic chuck 19 has a main body 19m and an electrode 19e provided inside the main body 19m. The main body 19m is made of a dielectric material such as aluminum oxide or aluminum nitride and has a substantially disc shape. The electrode 19e has a film shape. A DC power supply is electrically connected to the electrode 19e via a switch. When a voltage from the DC power supply is applied to the electrode 19e, an electrostatic attraction force is generated between the electrostatic chuck 19 and the substrate W. Due to the generated electrostatic attraction force, the substrate W is attracted to the electrostatic chuck 19 and held by the electrostatic chuck 19.
[0137] The plasma processing apparatus 1A further comprises an outer peripheral member 27. The outer peripheral member 27 extends circumferentially on the radially outer side of the substrate support portion 16 (support portion 17, base 18, electrostatic chuck 19, ring assembly 220). The outer peripheral member 27 may be composed of one or more parts. The outer peripheral member 27 may be formed of an insulating material such as quartz.
[0138] The ring assembly 220 includes a lower ring 221 and an upper ring 222. Each of the lower ring 221 and the upper ring 222 has an annular shape. Each of the lower ring 221 and the upper ring 222 is formed of a material appropriately selected depending on the plasma treatment performed in the plasma processing apparatus 1A. Each of the lower ring 221 and the upper ring 222 is formed of, for example, silicon or silicon carbide.
[0139] The lower ring 221 is positioned on the annular region 2b. The lower ring 221 may be placed on the second region 162 and on the electrostatic chuck 19. The lower ring 221 may also be placed on components other than the electrostatic chuck 19 in the second region 162.
[0140] The lower surface of the upper ring 222 is generally flat. The lower surface of the upper ring 222 includes tapered surfaces that define recesses. The lower surface of the upper ring 222 defines multiple recesses. The number of tapered surfaces and recesses of the upper ring 222 may be the same as the number of lift pins 53 of the second lifter 52A. Each recess is sized to accommodate the tip of the second columnar portion 532 of the corresponding lift pin 53. The upper ring 222 is positioned on the lower ring 221 such that each recess is aligned in a straight line with the corresponding lift pin 53 and the corresponding through hole 221h.
[0141] The upper ring 222 is housed in a recess of the lower ring 221. The lower ring 221 and the upper ring 222 are configured such that when they are placed on the annular region 2b, the upper surface of the outer portion of the lower ring 221 and the upper surface of the upper ring 222 are at approximately the same height as the upper surface of the substrate W on the substrate support region 2a. The upper ring 222 has an inner circumferential surface 222a that faces the end face of the substrate W on the substrate support region 2a when the lower ring 221 and the upper ring 222 are placed on the annular region 2b.
[0142] The second lifter 52A includes a number of lift pins 53 to raise and lower the lower ring 221 and the upper ring 222. The lift pins 53 can be any number (e.g., three) that can support and raise the ring assembly 220.
[0143] Each lift pin 53 may be formed of an insulating material. Each lift pin 53 may be formed of, for example, sapphire, alumina, quartz, silicon nitride, aluminum nitride, or resin. Each lift pin 53 includes a first columnar portion 531 and a second columnar portion 532. The first columnar portion 531 extends vertically. The first columnar portion 531 has a first upper end surface 531t. The first upper end surface 531t is capable of contacting the lower surface of the lower ring 221.
[0144] The second columnar portion 532 extends vertically above the first columnar portion 531. The second columnar portion 532 is narrowed relative to the first columnar portion 531 so as to expose the first upper end surface 531t. Each of the first columnar portion 531 and the second columnar portion 532 has a cylindrical shape. The diameter of the first columnar portion 531 is greater than the diameter of the second columnar portion 532. The second columnar portion 532 is movable up and down through the through hole 221h. The vertical length of the second columnar portion 532 is longer than the vertical thickness of the area on the lower ring 221 on which the upper ring 222 is placed.
[0145] The second columnar portion 532 has a second upper end surface 532t. The second upper end surface 532t is capable of contacting the upper ring 222. The tip of the second columnar portion 532, including the second upper end surface 532t, may be tapered so as to fit into a corresponding recess in the upper ring 222.
[0146] The second columnar portion 532 may include a first portion 532a and a second portion 532b. The first portion 532a is columnar and extends upward from the first columnar portion 531. The second portion 532b is columnar and extends above the first portion 532a. The second portion 532b includes a second upper end surface 532t. The width of the first portion 532a is greater than the width of the second portion 532b.
[0147] Each of the first columnar portion 531, the first portion 532a, and the second portion 532b may have a cylindrical shape. The diameter of the first columnar portion 531 is greater than the diameter of the first portion 532a, and the diameter of the first portion 532a is greater than the diameter of the second portion 532b.
[0148] The second columnar portion 532 may include a third portion 532c. The third portion 532c extends between the first portion 532a and the second portion 532b. The third portion 532c has a tapered surface.
[0149] The second lifter 52A includes one or more actuators 522. The one or more actuators 522 are configured to raise and lower a plurality of lift pins 53. Each of the one or more actuators 522 may include, for example, a motor.
[0150] The substrate processing system PS shown in Figure 11 shows a route for replacing the first ring PFR, which corresponds to the upper ring 222 shown in Figure 10. The first ring PFR is stored in a ring storage container CS2, for example, which is placed on the load port LP4. The first ring PFR stored in the ring storage container CS2 may be new (unused) or used but not heavily worn (hereinafter also referred to as the replacement first ring PFR).
[0151] The control unit CU transports the replacement first ring PFR from the atmospheric transport module LM and performs the replacement. However, before transporting the replacement first ring PFR to the processing module to be replaced among the processing modules PM1 to PM7, the control unit CU transports it to the temperature control unit 61 of the ring storage module RSM. The control unit CU first adjusts the temperature of the replacement first ring PFR in the temperature control unit 61, and then transports the temperature-adjusted replacement first ring PFR to the processing module to be replaced.
[0152] Figure 12 is a flowchart of the transport method for the fourth example. The following description will focus on the transport of the first ring PFR between the ring storage container CS2 and the processing module PM1. The same method can be used when the processing module to be replaced is one of the other processing modules PM2 to PM7, as in the case of processing module PM1. The transport method for the fourth example is initiated when the control unit CU receives an instruction to replace the first ring PFR.
[0153] The fourth example of the transport method includes steps S401 to S414 shown in Figure 12. Steps S401 to S414 are carried out by the control unit CU controlling each part of the substrate processing system PS.
[0154] In process S401, the control unit CU uses the transport robot TR2 of the atmospheric transport module LM to unload the replacement first ring PFR stored in the ring storage container CS2 and load it into the aligner AN, and the aligner AN performs alignment of the replacement first ring PFR. Alignment may include aligning the rotational position of the replacement first ring PFR to the target position. Alignment may also include aligning the center position of the replacement first ring PFR to the target position.
[0155] In step S402, the control unit CU transports the aligned replacement first ring PFR from the aligner AN to the vacuum transport module TM. Specifically, first, the transport robot TR2 of the atmospheric transport module LM unloads the aligned replacement first ring PFR from the aligner AN and loads it into the load lock module LL3, which has been pressurized to atmospheric pressure. Next, the load lock module LL3 depressurizes its interior. Then, the transport robot TR1 unloads the replacement first ring PFR from the load lock module LL3. In step S402, load lock modules LL1 and LL2 may be used instead of load lock module LL3.
[0156] In process S403, the control unit CU uses the transport robot TR1 to load the replacement first ring PFR into the temperature control unit 61 of the ring storage module RSM.
[0157] In step S404, the control unit CU adjusts the temperature of the replacement first ring PFR using the temperature adjustment unit 61. The target temperature during temperature adjustment is, for example, the same as the temperature of the substrate support portion 11 of the processing module PM1 to be replaced (the temperature inside the plasma processing chamber 10). This ensures that the replacement first ring PFR is properly temperature-adjusted before being transported to the processing module PM1.
[0158] In process S405, the control unit CU uses the transport robot TR1 to unload the first replacement ring PFR from the temperature control unit 61.
[0159] In process S406, the control unit CU uses the transport robot TR1 to unload the first ring (hereinafter also referred to as the used first ring PFR) that was placed on the substrate support section 11 of the processing module PM1 and used for substrate processing. At this time, for example, the transport robot TR1 holds the replacement first ring PFR with the upper fork FK1 while holding the used first ring PFR with the lower fork FK2. However, the holding configuration by the transport robot TR1 may be reversed.
[0160] In process S407, the control unit CU uses the transport robot TR1 to deliver the replacement first ring PFR to the processing module PM1. When the replacement first ring PFR is held by the upper fork FK1 and the used first ring PFR is held by the lower fork FK2, the replacement first ring PFR is positioned above the used first ring PFR. Therefore, even if particles attached to the used first ring PFR fall, it is possible to suppress them from adhering to the replacement first ring PFR.
[0161] In step S408, the control unit CU detects the position of the replacement first ring PFR that has been brought into the processing module PM1 using the position detection sensor S1 provided on the upper fork FK1.
[0162] In step S409, the control unit CU determines whether the replacement first ring PFR is misaligned based on the detected position of the replacement first ring PFR. If the control unit CU determines that the replacement first ring PFR is misaligned (step S409: NO), it proceeds to step S410. If the control unit CU determines that the replacement first ring PFR is not misaligned (step S408: YES), it proceeds to step S410.
[0163] In step S410, the control unit CU uses the transport robot TR1 to unload the replacement first ring PFR from the processing module PM1. After step S410, the control unit returns to step S407, where the transport robot TR1 corrects the position of the replacement first ring PFR unloaded from the processing module PM1 in step S407 and loads it back into the processing module PM1.
[0164] In step S411, the control unit CU transports the used first ring PFR discharged from the processing module PM1 from the vacuum transport module TM to the atmospheric transport module LM. Specifically, first, the transport robot TR1 loads the used first ring PFR into the load lock module LL1, which has been depressurized to a vacuum. Next, the load lock module LL1 increases the internal pressure to atmospheric pressure. Then, the transport robot TR2 of the atmospheric transport module LM discharges the used first ring PFR from the load lock module LL1 and loads the discharged used first ring PFR into the ring storage container CS2. In step S411, load lock modules LL2 and LL3 may be used instead of load lock module LL1.
[0165] In step S412, the control unit CU initiates the suction and holding of the replacement first ring PFR by the electrostatic chuck 19.
[0166] In step S413, the control unit CU adjusts the temperature of the replacement first ring PFR using the support temperature adjustment mechanism 116 of the substrate support 16. Through the above processing flow, the replacement first ring PFR is pre-temperature-adjusted by the temperature adjustment unit 61. Therefore, the control unit CU can significantly shorten the execution period of step S413.
[0167] In step S414, the control unit CU completes the sequence of the ring 113 transport method. Thereafter, the control unit CU loads the substrate W into the processing module PM1 having the replacement first ring PFR, and the substrate processing can be performed successfully.
[0168] According to the fourth example of the transport method described above, the temperature of the replacement first ring PFR is adjusted by the temperature adjustment unit 61 before it is brought into the processing module PM1. This allows the substrate processing system PS to reduce the time required for temperature adjustment of the replacement first ring PFR in the processing module PM1. As a result, the substrate processing system PS can quickly start substrate processing by the processing module PM1, thereby increasing the productivity of substrate processing. In the above embodiment, the case of replacing the first ring PFR was used as an example, but the second ring (lower ring 221) located outside the first ring PFR may be replaced in a similar manner.
[0169] In addition, the fourth example of the transport method may also be modified by changing the order of some of the steps S401 to S414 shown in Figure 12, omitting some steps, or conversely, adding other steps.
[0170] For example, steps S406 and S411 may be performed in parallel with the execution of step S404. Alternatively, steps S406 and S411 may be performed in parallel with the execution of steps S401 and S402. Also, for example, if the edge ring FR is not held by the electrostatic chuck 19, step S412 may be omitted.
[0171] The substrate processing system PS and transport method for transporting the first ring PFR can also be modified in various ways. For example, the substrate processing system PS may have a temperature control unit 61 for temperature-adjusting the replacement first ring PFR on the atmospheric transport module LM side. For example, the temperature control unit 61 may be provided in the ring storage container CS2, or in the aligner AN. In this case, the transport method adjusts the temperature of the replacement first ring PFR before transporting it into the vacuum transport module TM. This makes it possible to further shorten the period during which the temperature of the replacement first ring PFR is adjusted in the temperature control unit 61 on the vacuum transport module TM side. Alternatively, if the temperature of the replacement first ring PFR is adjusted in the temperature control unit 61 on the atmospheric transport module LM side, the substrate processing system PS may directly transport the replacement first ring PFR to the processing module to be replaced via the load lock modules LL1 to LL3.
[0172] Figure 13 is a flowchart of the fifth example of the transport method. The third example of the transport method is a method in which the first ring PFR used in the processing modules PM1 to PM7 of the substrate processing system PS is returned to the processing modules PM1 to PM7 as the first ring PFR from which the deposits have been removed (hereinafter also referred to as the improved first ring PFR) by the temperature control unit 61. The control unit CU starts the fifth example of the transport method based on triggers such as user instructions, the number of substrate processing cycles, the quality of the substrate W, sensor values of each processing module PM1 to PM7, and the occurrence of errors. The fifth example of the transport method will also be described in the case where the first ring PFR is transported between the ring storage module RSM and the processing module PM1. The same method can be used when the processing module is one of the other processing modules PM2 to PM7.
[0173] The fifth example of the transport method includes steps S501 to S512 shown in Figure 13. Steps S501 to S512 are carried out by the control unit CU controlling each part of the substrate processing system PS.
[0174] In process S501, the control unit CU uses the transport robot TR1 to remove the used first ring PFR (first ring PFR with deposit attached) that was placed on the substrate support section 11 of the processing module PM1 and used for substrate processing.
[0175] In process S502, the control unit CU transports the used first ring PFR, which has been unloaded from the processing module PM1 by the transport robot TR1, into the temperature control unit 61 (for example, the first temperature control device 62) of the ring storage module RSM.
[0176] In process S503, the control unit CU, using the temperature control unit 61, removes deposits and adjusts the temperature of the used first ring PFR that has been brought in. As a result, the deposits adhering to the used first ring PFR are effectively removed, and it becomes an improved first ring PFR.
[0177] After the deposit removal, the temperature control unit 61 proceeds to the step of temperature-adjusting the improved first ring PFR as a preliminary step before returning the improved first ring PFR to the processing module PM1. As a result, the temperature of the improved first ring PFR is adjusted to approximately match the temperature of the substrate support portion 11 of the processing module PM1.
[0178] In process S504, the control unit CU uses the transport robot TR1 to remove the first improved ring PFR after temperature adjustment from the temperature adjustment unit 61, place the first improved ring PFR on the stage 73 of the same ring storage module RSM, and perform alignment (positioning) of the first improved ring PFR.
[0179] Processes S505 to S512 may be the same as processes S110 to S117 shown in Figure 6.
[0180] As described above, the fifth example of the transport method can increase the productivity of substrate processing by removing deposits from the first ring PFR and adjusting the temperature using the temperature control unit 61. As a result, the substrate processing system PS does not need to perform the process of removing deposits from the first ring PFR within the processing modules PM1 to PM7. Therefore, contamination (such as particle scattering) that occurs in the processing modules PM1 to PM7 due to deposit removal can be avoided, and the quality of substrate processing can be further improved.
[0181] In addition, the fifth example of the transport method, like the first example, may have some steps S501 to S512 shown in Figure 13 rearranged, some steps may be omitted, or other steps may be added. For example, step S504 may be performed between steps S501 and S502. Also, for example, if the edge ring FR is not held by the electrostatic chuck 112, step S510 may be omitted.
[0182] The embodiments disclosed above include, for example, the following aspects:
[0183] (Note 1) A processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring, A vacuum transport module connected to the processing module and having a transport robot for transporting the ring, The aforementioned ring is equipped with a temperature control unit that allows temperature adjustment, Includes a control unit, The control unit, Before loading the ring into the processing module, the process involves adjusting the temperature of the ring using the temperature adjustment unit. The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. PCB processing system. (Note 2) The aforementioned ring is a replacement ring. The control unit has a step of unloading the used ring supported by the substrate support before loading the replacement ring into the processing module. A substrate processing system as described in Appendix 1 or 2. (Note 3) The control unit removes the used ring from the processing module while the temperature adjustment unit is adjusting the temperature of the replacement ring. The substrate processing system described in Appendix 2. (Note 4) The ring includes a first ring provided on the ring support surface and a second ring that surrounds the first ring and overlaps with the first ring in a plan view below. The step of adjusting the temperature of the ring involves adjusting the temperature of the replacement first ring, and then transporting the temperature-adjusted replacement first ring by the transport robot and placing it on the substrate support. A substrate processing system as described in any one of the items 1 to 4 of the appendix. (Note 5) The ring includes a first ring provided on the ring support surface and a second ring that surrounds the first ring and overlaps with the first ring in a plan view below. The step of temperature-adjusting the rings involves temperature-adjusting the first replacement ring and the second replacement ring, and then transporting the temperature-adjusted first replacement ring and the second replacement ring by the transport robot and placing them on the substrate support. A substrate processing system as described in any one of the items 1 to 5 of the appendix. (Note 6) The control unit has a step of unloading the used first ring supported by the substrate support before loading a replacement first ring into the processing module. The substrate processing system described in Appendix 4. (Note 7) The control unit removes the used first ring from the processing module while the temperature adjustment unit is adjusting the temperature of the replacement first ring. The substrate processing system described in Appendix 6. (Note 8) The control unit has a step of unloading the used first ring and second ring, which are supported by the substrate support, before loading the replacement first ring and the replacement second ring into the processing module. The substrate processing system described in Appendix 5. (Note 9) The process of removing the used first ring and the used second ring involves removing the used first ring, and then removing the used second ring. The process of loading the first ring and the second ring involves loading the replacement second ring, and then loading the replacement second ring. The substrate processing system described in Appendix 8. (Note 10) While the temperature adjustment unit is adjusting the temperature of the replacement first ring and the replacement second ring, the control unit removes the used first ring and the used second ring from the processing module. The substrate processing system described in Appendix 5. (Note 11) The temperature control unit is capable of simultaneously adjusting the temperature of the first ring and the second ring. The substrate processing system described in Appendix 5. (Note 12) The temperature control unit comprises a first temperature control device capable of controlling the temperature of the first ring, and a second temperature control device capable of controlling the temperature of the first ring. The substrate processing system described in Appendix 11. (Note 13) The vacuum transport module is connected to a ring storage module capable of storing multiple rings, The temperature control unit is provided in the ring storage module, A substrate processing system as described in any one of the appendices 1 to 12. (Note 14) The ring storage module comprises the temperature control unit, a basket for storing multiple rings, and an alignment device for aligning the rings, arranged side by side. The substrate processing system described in Appendix 13. (Note 15) The control unit performs the following steps in this order: taking the ring stored in the basket with the transport robot and transporting it to the temperature adjustment unit; adjusting the temperature of the ring with the temperature adjustment unit; and transporting the temperature-adjusted ring to the alignment device and performing the alignment. The substrate processing system described in Appendix 14. (Note 16) The temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10°C from the temperature of the substrate support portion of the processing module into which the ring is loaded. A substrate processing system as described in any one of the appendices 1 to 15. (Note 17) The temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10°C from the temperature of the heat exchange medium flowing through the flow path of the substrate support part of the processing module into which the ring is loaded. A substrate processing system as described in any one of the items 1 to 16 of the appendix. (Note 18) The temperature control unit has a temperature control chamber for housing one of the rings, and a housing that can close the temperature control chamber to control the temperature of the ring. A substrate processing system as described in any one of the items 1 to 17 of the appendix. (Note 19) The transport robot has a position detection sensor that detects the position of the ring placed on the substrate support portion, The control unit determines whether or not there is a misalignment of the ring detected by the position detection sensor, and adjusts the position of the ring if there is a misalignment. A substrate processing system as described in any one of the appendices 1 to 18. (Note 20) The control unit performs the following steps in this order: transporting the used ring that has been removed into the temperature control unit; removing any deposits from the used ring while adjusting its temperature using the temperature control unit; and transporting the ring from which the deposits have been removed into the processing module. A substrate processing system as described in any one of the appendices 1 to 19. (Note 21) The control unit performs the following steps in this order: transporting the used ring that has been removed into the temperature control unit; removing any deposits from the used ring using the temperature control unit and then adjusting the temperature of the ring; and transporting the ring from which the deposits have been removed into the processing module. A substrate processing system as described in any one of the appendices 1 to 19. (Note 22) A load lock module connected to the vacuum transport module, An atmospheric transport module connected to the vacuum transport module via the load lock module, A load port connected to the aforementioned atmospheric transport module, The system further comprises a ring storage container placed on the aforementioned load port, The aforementioned ring is a replacement ring. When the control unit transports the replacement ring stored in the ring storage container from the air transport module to the processing module, it performs the following steps in this order: transporting the replacement ring into the temperature control unit; adjusting the temperature of the replacement ring using the temperature control unit; and transporting the replacement ring after temperature adjustment using the temperature control unit to the processing module. A substrate processing system as described in any one of the items 1 to 21 of the appendix. (Note 23) The ring includes a first ring provided to surround the substrate support surface, and a second ring provided to surround the first ring and to overlap the first ring below in a plan view. The step of adjusting the temperature of the ring involves adjusting the temperature of the replacement first ring, and then transporting the temperature-adjusted replacement first ring by the transport robot and placing it on the substrate support. The substrate processing system described in Appendix 22. (Note 24) The control unit has a step of removing the used first ring supported by the substrate support before bringing in the replacement first ring. The substrate processing system described in Appendix 23. (Note 25) The control unit adjusts the temperature of the replacement first ring by the temperature adjustment unit, while the used first ring is being removed from the processing module. The substrate processing system described in Appendix 24. (Note 26) A processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring, A vacuum transport module connected to the processing module and having a transport robot for transporting the ring, The aforementioned ring is equipped with a temperature control unit that allows temperature adjustment, Includes a control unit, The control unit, Before placing the ring on the ring support surface, the temperature of the ring is adjusted by the temperature adjustment unit, The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. PCB processing system. (Note 27) A method for transporting a ring into a processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting the ring, wherein the ring is transported into the processing module, The process involves using a transport robot of a vacuum transport module connected to the processing module to transport the ring into a temperature control section connected to the vacuum transport module, The process of adjusting the temperature of the ring using the temperature adjustment unit, The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. Transportation method.
[0184] It should be noted that the present invention is not limited to the configurations shown in the above embodiments, including combinations with other elements. These points can be modified without departing from the spirit of the invention and can be appropriately determined according to their application. Furthermore, the matters described in the multiple embodiments can be combined with other configurations, as long as they do not contradict each other.
[0185] For example, although the above embodiment describes a capacitively coupled plasma apparatus as an example, it is not limited to this and may be applied to other plasma apparatuses. For example, an inductively coupled plasma (ICP) apparatus may be used instead of a capacitively coupled plasma apparatus. In this case, the inductively coupled plasma apparatus includes an antenna and a lower electrode. The lower electrode is located within the substrate support, and the antenna is located above or above the chamber. The RF generator is coupled to the antenna, and the DC generator is coupled to the lower electrode. Therefore, the RF generator is coupled to the upper electrode of the capacitively coupled plasma apparatus or to the antenna of the inductively coupled plasma apparatus. That is, the RF generator is coupled to the plasma processing chamber 10.
[0186] This application claims priority to Basic Application No. 2022-162608, filed with the Japan Patent Office on October 7, 2022, the entire contents of which are incorporated herein by reference. [Explanation of Symbols]
[0187] 11, 16 Substrate support section 61 Temperature adjustment section 113,220 rings CU Control Unit PM1~PM7 Processing Modules PS substrate processing system TM Vacuum Conveyor Module TR1, TR2 Transport Robots W board
Claims
1. A processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring, A vacuum transport module connected to the processing module and having a transport robot for transporting the ring, The aforementioned ring is equipped with a temperature control unit that allows temperature adjustment, Includes a control unit, The vacuum transport module is connected to a ring storage module capable of storing multiple rings, The temperature control unit is provided in the ring storage module, The control unit, Before loading the ring into the processing module, the process involves adjusting the temperature of the ring using the temperature adjustment unit. The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. PCB processing system.
2. A processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring, A vacuum transport module connected to the processing module and having a transport robot for transporting the ring, The aforementioned ring is equipped with a temperature control unit that allows temperature adjustment, Includes a control unit, The temperature control unit is connected to the vacuum transport module, The control unit, Before loading the ring into the processing module, the process involves adjusting the temperature of the ring using the temperature adjustment unit. The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. PCB processing system.
3. The aforementioned ring is a replacement ring. The control unit has a step of unloading the used ring supported by the substrate support before loading the replacement ring into the processing module. A substrate processing system according to claim 1 or 2.
4. The control unit removes the used ring from the processing module while the temperature adjustment unit is adjusting the temperature of the replacement ring. The substrate processing system according to claim 3.
5. The ring includes a first ring provided on the ring support surface and a second ring that surrounds the first ring and overlaps with the first ring in a plan view below. The step of adjusting the temperature of the ring involves adjusting the temperature of the replacement first ring, and then transporting the temperature-adjusted replacement first ring by the transport robot and placing it on the substrate support. A substrate processing system according to claim 1 or 2.
6. The ring includes a first ring provided on the ring support surface and a second ring that surrounds the first ring and overlaps with the first ring in a plan view below. The step of adjusting the temperature of the rings involves adjusting the temperature of the replacement first ring and the replacement second ring, and then transporting the temperature-adjusted replacement first ring and the replacement second ring by the transport robot and placing them on the substrate support section. A substrate processing system according to claim 1 or 2.
7. The control unit has a step of unloading the used first ring supported by the substrate support before loading the replacement first ring into the processing module. The substrate processing system according to claim 5.
8. The control unit removes the used first ring from the processing module while the temperature adjustment unit is adjusting the temperature of the replacement first ring. The substrate processing system according to claim 7.
9. The control unit has a step of unloading the used first ring and second ring, which are supported by the substrate support, before loading the replacement first ring and the replacement second ring into the processing module. The substrate processing system according to claim 6.
10. The process of removing the used first ring and the used second ring involves removing the used first ring, and then removing the used second ring. The process of bringing in the first ring and the second ring involves bringing in the replacement second ring, and then bringing in the replacement first ring. The substrate processing system according to claim 9.
11. While the temperature adjustment unit is adjusting the temperature of the replacement first ring and the replacement second ring, the control unit removes the used first ring and the used second ring from the processing module. The substrate processing system according to claim 6.
12. The temperature control unit is capable of simultaneously adjusting the temperature of the first ring and the second ring. The substrate processing system according to claim 6.
13. The temperature control unit includes a first temperature control device capable of controlling the temperature of the first ring, and a second temperature control device capable of controlling the temperature of the second ring. The substrate processing system according to claim 12.
14. The ring storage module comprises the temperature control unit, a basket for storing multiple rings, and an alignment device for aligning the rings, arranged side by side. The substrate processing system according to claim 1.
15. The control unit performs the following steps in this order: taking the ring stored in the basket with the transport robot and transporting it to the temperature adjustment unit; adjusting the temperature of the ring with the temperature adjustment unit; and transporting the temperature-adjusted ring to the alignment device and performing the alignment. The substrate processing system according to claim 14.
16. The temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10°C from the temperature of the substrate support portion of the processing module into which the ring is loaded. A substrate processing system according to claim 1 or 2.
17. The temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10°C from the temperature of the heat exchange medium flowing through the flow path of the substrate support part of the processing module into which the ring is loaded. A substrate processing system according to claim 1 or 2.
18. The temperature control unit has a temperature control chamber for housing one of the rings, and a housing that can close the temperature control chamber to control the temperature of the ring. A substrate processing system according to claim 1 or 2.
19. The transport robot has a position detection sensor that detects the position of the ring placed on the substrate support portion, The control unit determines whether or not there is a misalignment of the ring detected by the position detection sensor, and adjusts the position of the ring if there is a misalignment. A substrate processing system according to claim 1 or 2.
20. The control unit performs the following steps in this order: transporting the used ring that has been removed into the temperature control unit; removing any deposits from the used ring while adjusting its temperature using the temperature control unit; and transporting the ring from which the deposits have been removed into the processing module. A substrate processing system according to claim 1 or 2.
21. The control unit performs the following steps in this order: transporting the used ring that has been removed into the temperature control unit; removing any deposits from the used ring using the temperature control unit and then adjusting the temperature of the ring; and transporting the ring from which the deposits have been removed into the processing module. A substrate processing system according to claim 1 or 2.
22. A load lock module connected to the vacuum transport module, An atmospheric transport module connected to the vacuum transport module via the load lock module, A load port connected to the aforementioned atmospheric transport module, The system further comprises a ring storage container placed on the aforementioned load port, The aforementioned ring is a replacement ring. When the control unit transports the replacement ring stored in the ring storage container from the air transport module to the processing module, it performs the following steps in this order: transporting the replacement ring into the temperature control unit; adjusting the temperature of the replacement ring using the temperature control unit; and transporting the replacement ring after temperature adjustment using the temperature control unit to the processing module. A substrate processing system according to claim 1 or 2.
23. The ring includes a first ring provided to surround the substrate support surface, and a second ring provided to surround the first ring and to overlap the first ring below in a plan view. The step of adjusting the temperature of the ring involves adjusting the temperature of the replacement first ring, and then transporting the temperature-adjusted replacement first ring by the transport robot and placing it on the substrate support. The substrate processing system according to claim 22.
24. The control unit includes a step of unloading the used first ring supported by the substrate support before loading the replacement first ring. The substrate processing system according to claim 23.
25. The control unit, while the temperature adjustment unit is adjusting the temperature of the replacement first ring, removes the used first ring from the processing module. The substrate processing system according to claim 24.
26. A processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring, A vacuum transport module connected to the processing module and having a transport robot for transporting the ring, The aforementioned ring is equipped with a temperature control unit that allows temperature adjustment, Includes a control unit, The temperature control unit comprises a first temperature control device capable of controlling the temperature of the first ring and a second temperature control device capable of controlling the temperature of the second ring, and is capable of simultaneously controlling the temperature of each of the first and second rings. The control unit, Before loading the ring into the processing module, the process involves adjusting the temperature of the ring using the temperature adjustment unit. The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. PCB processing system.
27. A processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring, A vacuum transport module connected to the processing module and having a transport robot for transporting the ring, The aforementioned ring is equipped with a temperature control unit that allows temperature adjustment, Includes a control unit, The temperature control unit has a temperature control chamber for housing one of the rings, and a housing that can close the temperature control chamber to control the temperature of the ring. The control unit, Before loading the ring into the processing module, the process involves adjusting the temperature of the ring using the temperature adjustment unit. The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. PCB processing system.
28. A processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting a ring, A vacuum transport module connected to the processing module and having a transport robot for transporting the ring, The aforementioned ring is equipped with a temperature control unit that allows temperature adjustment, Includes a control unit, The control unit, Before loading the ring into the processing module, the process involves loading the used ring that has been unloaded into the temperature control unit, A step of removing deposits from the used ring while adjusting its temperature using the temperature control unit, The process of transporting the ring, from which any deposits have been removed in the temperature control unit, by the transport robot to the processing module and placing it on the substrate support unit is performed in this order. PCB processing system.
29. A method for transporting a ring into a processing module having a processing chamber and a substrate support portion provided within the processing chamber so as to surround the substrate support surface and including a ring support surface for supporting the ring, wherein the ring is transported into the processing module, The process involves using a transport robot of a vacuum transport module connected to the processing module to transport the ring into a temperature control section connected to the vacuum transport module, The process of adjusting the temperature of the ring using the temperature adjustment unit, The steps of transporting the ring whose temperature has been adjusted in the temperature adjustment unit by the transport robot and placing it on the substrate support unit are performed in this order. Transportation method.
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