Mist deposition apparatus

Abstract

The present disclosure aims to provide a mist deposition apparatus capable of forming a thin film with high precision on an object to be deposited. The deposition nozzle (5A) in the mist deposition apparatus (101) of this disclosure comprises a nozzle body (20) and a temperature control mechanism including a temperature control plate (31). The nozzle body (20) has a mist supply chamber (21) that contains raw material solution mist (MT), and the raw material solution mist (MT) is supplied to the object to be deposited (10) from a mist supply port (21o) of the mist supply chamber (21). The temperature control mechanism performs a cooling process as a temperature control process to cool the mist supply chamber (21) so that the temperature inside the mist supply chamber (21) does not reach the boiling point of the solvent in the raw material solution (1).

Description

[[TECHNICAL FIELD]]

[0001] The present disclosure relates to a mist film deposition apparatus that supplies raw material solution mist obtained by applying ultrasonic vibration to a raw material solution to a film deposition target object. [[BACKGROUND ART]]

[0002] Mist film deposition apparatuses that supply raw material solution mist to an external film deposition target object are used as electronic device manufacturing apparatuses for FPDs (Flat Panel Displays), solar cells, LEDs (Light Emitting Diodes), touch panels and the like. The raw material solution mist is an ultrasonic mist obtained by applying ultrasonic vibration to a raw material solution.

[0003] A conventional mist film deposition apparatus has a film deposition nozzle, and supplies raw material solution mist from the film deposition nozzle to a film deposition target object. An example of such a mist film deposition apparatus is the oxide film deposition apparatus disclosed in Patent Document 1.

[0004] FIG. 16 is an explanatory view schematically showing the configuration of a conventional mist film deposition apparatus 200. As shown in the drawing, in the mist film deposition apparatus 200, an ultrasonic mist generator 3 applies ultrasonic vibration to a raw material solution 1 to generate raw material solution mist MT. The raw material solution mist MT generated by the ultrasonic mist generator 3 passes through a mist conveyance path 4 and is accommodated in a mist air supply chamber 51 of a film deposition nozzle 50. Note that the conveyance of the raw material solution mist MT through the mist conveyance path 4 is performed by a conveyance gas (inert gas) not shown in the drawing.

[0005] The film deposition nozzle 50 has a mist air supply chamber 51 and a mist exhaust chamber 52 that are independent of each other, a mist supply slit 51o serving as a mist supply port is provided at a lower portion of the mist air supply chamber 51, and a mist intake slit 52i serving as a mist intake port is provided at a lower portion of the mist exhaust chamber 52.

[0006] Below the film-forming nozzle 50, a heater stage 11 is provided that overlaps with the mist supply chamber 51 and the mist exhaust chamber 52 in a plan view, without contacting them. The object to be film-formed 10 is placed on the heater stage 11, which is the mounting section. The heater stage 11 has an object heating function that heats the object to be film-formed 10 by radiant heat.

[0007] The film-forming nozzle 50 blows out the raw material solution mist MT, which is temporarily contained in the mist air supply chamber 51, from the mist supply slit 51o. The raw material solution mist MT blown out from the mist supply slit 51o is taken into the mist exhaust chamber 52 via the mist intake slit 52i.

[0008] As the raw material solution mist MT flows from the mist supply slit 51o to the mist intake slit 52i, a portion of the raw material solution mist MT is supplied to the surface of the object to be film-deposited 10.

[0009] Since the object to be coated 10 is heated by the radiant heat of the heater stage 11, a thin film is formed on the surface of the object to be coated 10 by chemical reactions of the raw material solution mist MT on the surface of the object to be coated 10.

[0010] Meanwhile, the raw material solution mist MT taken into the mist exhaust chamber 52 propagates through the mist exhaust path 13 and is trapped by the mist filter 12, and the raw material solution mist MT passes through the mist filter 12. liquid components The removed gaseous components are exhausted to the outside by the exhaust pump 14. In this way, the mist filter 12 and the exhaust pump 14 function as an exhaust mechanism. The mist filter 12 and the exhaust pump 14 are connected via a relay path 15 through which the gaseous components can flow.

[0011] Thus, the conventional mist film deposition apparatus 200 deposits a thin film on the surface of the object to be deposited 10 by supplying the raw material solution mist MT to the surface of the object to be deposited 10 during the flow process of the raw material solution mist MT from the mist supply slit 51o of the mist air supply chamber 51 of the film deposition nozzle 50 to the mist intake slit 52i of the mist exhaust chamber 52. [Prior art documents] [Patent Documents]

[0012] [Patent Document 1] International Publication No. 2013 / 038484 [Overview of the project] [Problems that the invention aims to solve]

[0013] However, in conventional mist film deposition apparatuses 200, when depositing a thin film, the object to be deposited 10 is heated by radiant heat from the heater stage 11. As a result, heat from the heater stage 11 is also transmitted to the film deposition nozzle 50, causing the temperature inside the mist air supply chamber 51 of the film deposition nozzle 50 to rise. When the temperature inside the mist air supply chamber 51 rises, a problem arises in which a first temperature rise malfunction phenomenon and a second temperature rise malfunction phenomenon occur with respect to the raw material solution mist MT inside the mist air supply chamber 51.

[0014] The first temperature rise malfunction is the phenomenon in which the raw material dissolved in raw material solution 1 precipitates from the raw material solution mist MT, and the second temperature rise malfunction is the phenomenon in which the raw material dispersed in raw material solution 1 precipitates from the raw material solution mist MT.

[0015] This disclosure aims to provide a mist deposition apparatus that can solve the above-mentioned problems and suppress the temperature rise in the mist supply chamber, thereby enabling the formation of a thin film with high precision on the object to be deposited. [Means for solving the problem]

[0016] The mist film deposition apparatus of the present disclosure comprises a mist generator that generates a raw material solution mist by applying ultrasonic vibrations to a raw material solution, and a film deposition nozzle that supplies the raw material solution mist to an external object to be film-deposited, wherein the film deposition nozzle includes a nozzle body having a mist air supply chamber for containing the raw material solution mist, and a temperature control mechanism that performs a temperature control process on the mist air supply chamber, wherein the raw material solution mist generated by the mist generator is temporarily contained in the mist air supply chamber and then supplied to the object to be film-deposited from a mist supply port of the mist air supply chamber, and the temperature control process includes a cooling process that cools the mist air supply chamber so that the temperature inside the mist air supply chamber does not reach the boiling point of the solvent in the raw material solution. [Effects of the Invention]

[0017] In the mist film deposition apparatus of this disclosure, the temperature control mechanism performs a cooling treatment as a temperature control process on the mist air supply chamber, thereby suppressing the rise in temperature inside the mist air supply chamber so as not to reach the boiling point of the solvent in the raw material solution, and thus preventing deterioration of the raw material solution mist supplied to the object to be deposited.

[0018] As a result, the mist deposition apparatus of this disclosure can suppress the temperature rise in the mist air supply chamber and stably supply high-quality raw material solution mist to the object to be deposited, thereby enabling the formation of a thin film with high precision on the object.

[0019] The purpose, features, aspects, and advantages of this disclosure will become clearer from the following detailed description and accompanying drawings. [Brief explanation of the drawing]

[0020] [Figure 1] Figure 1 is a schematic diagram illustrating the configuration of the mist deposition apparatus of Embodiment 1. [Figure 2] Figure 2 is a schematic diagram illustrating the cross-sectional structure of the film deposition nozzle shown in Figure 1. [Figure 3] Figure 3 is a schematic explanatory diagram (part 1) showing the detailed structure of the film deposition nozzle shown in Figures 1 and 2. [Figure 4]FIG. 4 is an explanatory diagram (part 2) schematically showing details of the structure of the film deposition nozzle shown in FIGS. 1 and 2. [Figure 5] FIG. 5 is an explanatory diagram (part 3) schematically showing details of the structure of the film deposition nozzle shown in FIGS. 1 and 2. [Figure 6] FIG. 6 is an explanatory diagram schematically showing the cross-sectional structure of a film deposition nozzle in the mist film deposition apparatus according to Embodiment 2. [Figure 7] FIG. 7 is an explanatory diagram (part 1) schematically showing details of the structure of the mist film deposition apparatus shown in FIG. 6. [Figure 8] FIG. 8 is an explanatory diagram (part 2) schematically showing details of the structure of the mist film deposition apparatus shown in FIG. 6. [Figure 9] FIG. 9 is a plan view schematically showing a first aspect of the mist film deposition apparatus according to Embodiment 2. [Figure 10] FIG. 10 is a plan view schematically showing a second aspect of the mist film deposition apparatus according to Embodiment 2. [Figure 11] FIG. 11 is an explanatory diagram schematically showing the cross-sectional structure of a film deposition nozzle in the mist film deposition apparatus according to Embodiment 3. [Figure 12] FIG. 12 is an explanatory diagram schematically showing a control system that controls the heater and the refrigerant path shown in FIG. 11. [Figure 13] FIG. 13 is an explanatory diagram (part 1) schematically showing details of the structure of the film deposition nozzle shown in FIG. 11. [Figure 14] FIG. 14 is an explanatory diagram (part 2) schematically showing details of the structure of the film deposition nozzle shown in FIG. 11. [Figure 15] FIG. 15 is an explanatory diagram schematically showing the structure of a film deposition nozzle having only a mist supply chamber. [Figure 16] FIG. 16 is an explanatory diagram schematically showing the configuration of a conventional mist film deposition apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0021] <Embodiment 1> Figure 1 is a schematic diagram illustrating the configuration of the mist deposition apparatus 101 of Embodiment 1. As shown in the figure, in the mist deposition apparatus 101, the ultrasonic mist generator 3, which is a mist generator, performs an atomization process by applying ultrasonic vibrations to the raw material solution 1 to generate raw material solution mist MT. In this way, the raw material solution mist MT is obtained by atomizing the raw material solution 1 with ultrasonic vibrations.

[0022] The raw material solution mist MT generated by the atomization process by the ultrasonic mist generator 3 is transported through the mist transport path 4 and contained in the mist air supply chamber 21 of the film-forming nozzle 5A. The transport of the raw material solution mist MT via the mist transport path 4 is carried out by a transport gas (inert gas) not shown. Thus, the mist transport path 4 is a path for transporting the raw material solution mist MT generated from the ultrasonic mist generator 3, which is a mist generator.

[0023] Figure 2 is a schematic diagram illustrating the cross-sectional structure of the film deposition nozzle 5A shown in Figure 1. The XYZ Cartesian coordinate system is shown in Figure 2. As shown in the figure, the film deposition nozzle 5A mainly consists of a nozzle body 20 and a temperature control plate 31.

[0024] The temperature control plate 31 is a main component of the temperature control mechanism and is made of a material with low thermal conductivity, such as stainless steel or alumina. The temperature control mechanism further includes cooling means and heating means, which are not shown in Figure 2.

[0025] Therefore, the temperature control mechanism can perform a cooling process on the mist air supply chamber 21 of the nozzle body 20 via the temperature control plate 31 using a cooling means, and a heating process on the mist air supply chamber 21 via the temperature control plate 31 using a heating means.

[0026] Thus, the film deposition nozzle 5A consists of a nozzle body 20 and a temperature control mechanism, the temperature control mechanism mainly includes a cooling means and a heating means (not shown), and a temperature control plate 31.

[0027] As shown in Figure 2, the temperature control plate 31, which is the main component of the temperature control mechanism, is positioned in a manner that it contacts the nozzle body 20 and surrounds the nozzle body 20.

[0028] The nozzle body 20 has a mist supply chamber 21 and a mist exhaust chamber 22 that are independent of each other. A mist supply slit 21o, which is a mist supply port, is provided at the bottom of the mist supply chamber 21, and a mist intake slit 22i, which is a mist intake port, is provided at the bottom of the mist exhaust chamber 22.

[0029] The temperature control plate 31 has a mist supply through-hole 23 located below the mist air supply chamber 21, which overlaps with the mist supply slit 21o in a plan view. The temperature control plate 31 also has a mist exhaust through-hole 24 located below the mist exhaust chamber 22, which overlaps with the mist intake slit 22i in a plan view.

[0030] As shown in Figure 1, in the mist film deposition apparatus 101 of Embodiment 1, the raw material solution mist MT supplied from the mist supply slit 21o of the mist air supply chamber 21 is taken into the mist exhaust chamber 22 via the mist supply through-port 23, the mist exhaust through-port 24, and the mist intake slit 22i.

[0031] As shown in Figure 1, a heater stage 11 is provided below the film deposition nozzle 5A, without contacting the mist supply chamber 21 and the mist exhaust chamber 22. The heater stage 11 is positioned so as to overlap with the mist supply chamber 21 and the mist exhaust chamber 22 in a plan view, and the object to be deposited 10 is placed on the heater stage 11. The object to be deposited 10 is placed on the heater stage 11 in a position that overlaps with the mist supply slit 21o and the mist intake slit 22i in a plan view.

[0032] In a mist deposition apparatus 101 with this configuration, the raw material solution mist MT is supplied onto the object to be deposited 10 during the flow process of the raw material solution mist MT from the mist supply slit 21o, which is the mist supply port, to the mist intake slit 22i, which is the mist intake port.

[0033] The heater stage 11 has an object heating function that heats the object to be coated 10 by radiant heat. Because the object to be coated 10 is heated by the object heating function of the heater stage 11, a thin film is formed on the surface of the object to be coated 10 by chemical reactions of the raw material solution mist MT on the surface of the object to be coated 10.

[0034] Meanwhile, the raw material solution mist MT taken into the mist exhaust chamber 22 propagates through the mist exhaust path 13 and is trapped by the mist filter 12. The gaseous component, from which the liquid component of the raw material solution mist MT has been removed after passing through the mist filter 12, is exhausted to the outside by the exhaust pump 14. The mist filter 12 and the exhaust pump 14 are connected via a relay path 15 through which the gaseous component can flow.

[0035] In this way, the combination of the mist filter 12 and the exhaust pump 14 can be configured to exhaust the raw material solution mist MT to the outside of the film-forming nozzle 5A. The mist exhaust path 13 is a path that transports the liquid-gas mixture component, including the raw material solution mist MT contained in the mist exhaust chamber 22, toward the mist filter 12.

[0036] The exhaust pump 14 is more likely to malfunction if liquid components such as the raw material solution mist MT are present. As shown in Figure 1, a mist filter 12 is installed upstream of the exhaust pump 14, and the mist filter 12 traps residual raw material solution mist MT from the liquid-gas mixture, so that only gaseous components are sent to the exhaust pump 14.

[0037] Therefore, the exhaust mechanism, consisting of the mist filter 12 and the exhaust pump 14, can perform exhaust treatment of liquid-gas mixed components, including the raw material solution mist MT, without causing a malfunction in the exhaust pump 14.

[0038] Thus, the mist film deposition apparatus 101 of Embodiment 1 can deposit a thin film on the surface of the object to be deposited 10 by supplying the raw material solution mist MT to the surface of the object to be deposited 10 during the flow process of the raw material solution mist MT from the mist supply slit 21o of the mist air supply chamber 21 of the film deposition nozzle 5A to the mist intake slit 22i of the mist exhaust chamber 22.

[0039] Figures 3 to 5 are schematic diagrams illustrating the detailed structure of the film deposition nozzle 5A shown in Figures 1 and 2. Figures 3 and 4 show the cross-sectional structure of the film deposition nozzle 5A, respectively, and Figure 5 shows the planar structure viewed from the bottom side of the film deposition nozzle 5A. The XYZ Cartesian coordinate system is indicated in each of Figures 3 to 5.

[0040] As shown in Figure 3, by providing a separation wall of temperature control plate 31 between the mist air supply chamber 21 and the mist exhaust chamber 22, the mist air supply chamber 21 and the mist exhaust chamber 22 are also thermally separated.

[0041] Furthermore, as shown in Figures 3 and 4, the nozzle body 20 further includes a mist supply pipe 25 and a mist exhaust pipe 26. Figure 3 shows the cross-sectional structure in the XZ plane including the mist supply chamber 21 and the mist exhaust chamber 22, and Figure 4 shows the cross-sectional structure in the YZ plane including the mist supply chamber 21.

[0042] The mist supply pipe 25 is installed above the mist air supply chamber 21 and is positioned between the mist transport path 4 and the mist air supply chamber 21 so that the raw material solution mist MT transported by the mist transport path 4 is contained within the mist air supply chamber 21. The mist supply pipe 25 is installed by passing through the temperature control plate 31, which is located above the mist air supply chamber 21.

[0043] The mist exhaust pipe 26 is located above the mist exhaust chamber 22 and is positioned between the mist exhaust path 13 and the mist exhaust chamber 22 so that the raw material solution mist MT is discharged into the mist exhaust path 13. The mist exhaust pipe 26 is installed to pass through the temperature control plate 31 located above the mist exhaust chamber 22.

[0044] As shown in Figure 5, the mist supply through-hole 23 and the mist supply slit 21o have matching planar shapes, and the mist exhaust through-hole 24 and the mist intake slit 22i have matching planar shapes. In addition, the mist supply pipe 25 overlaps with the central part of the mist supply through-hole 23 in a planar view, and the mist exhaust pipe 26 overlaps with the central part of the mist exhaust through-hole 24 in a planar view. Note that Figure 5 shows the planar structure of the film deposition nozzle 5A in the XY plane as viewed from below.

[0045] In the mist film deposition apparatus 101 of Embodiment 1, the temperature control mechanism, with the temperature control plate 31 as its main component, performs a cooling process as a temperature control treatment on the mist air supply chamber 21. By suppressing the temperature rise of the mist air supply chamber 21 so that it does not reach the boiling point of the solvent in the raw material solution 1, deterioration of the raw material solution mist MT supplied to the film deposition target 10 can be avoided.

[0046] In the following explanation, the boiling point of the solvent in raw material solution 1 is defined as the upper limit temperature T1. When the temperature inside the mist air supply chamber 21 exceeds the upper limit temperature T1, a first temperature rise defect occurs in which the raw material dissolved in raw material solution 1 precipitates from the raw material solution mist MT, and a second temperature rise defect occurs in which the raw material dispersed in raw material solution 1 precipitates from the raw material solution mist MT. When the first or second temperature rise defect occurs, the quality of the raw material solution mist MT deteriorates.

[0047] For example, if the solvent in raw material solution 1 is ethanol, the upper limit temperature T1 (boiling point) is 64°C; if the solvent in raw material solution 1 is propanol, the upper limit temperature T1 is 82°C; if the solvent in raw material solution 1 is water, the upper limit temperature T1 is 100°C; and if the solvent in raw material solution 1 is gallium chloride solution, the upper limit temperature T1 is 201°C. Note that gallium chloride solution refers to a solution of gallium chloride dissolved in water.

[0048] The following describes a specific example of the cooling process. Let the heating temperature T11 be the set temperature by the object heating function of the heater stage 11, and assume that {T11>T1} holds true between the heating temperature T11 and the upper limit temperature T1.

[0049] A temperature adjustment mechanism including the temperature adjustment plate 31 performs cooling processing such that the temperature of the temperature adjustment plate 31 reaches the set plate temperature T31. {T31<T11} holds between the plate temperature T31 and the heating temperature T11. Here, the set plate temperature T31 is the initial set temperature of the temperature adjustment plate 31 when the object heating function of the heater stage 11 is disabled.

[0050] On the other hand, when the object heating function of the heater stage 11 is enabled, heat exchange is performed between the heater stage 11 and the temperature adjustment plate 31, and the temperature of the temperature adjustment plate 31 rises to (T31+α(>0)).

[0051] Accordingly, the temperature adjustment mechanism including the temperature adjustment plate 31 and a cooling means (not shown) sets the set plate temperature T31 in the cooling processing so as to satisfy {(T31+α)<T11}.

[0052] Therefore, the mist film-forming apparatus 101 according to Embodiment 1 can stably perform cooling processing for the mist air supply chamber 21 such that the temperature in the mist air supply chamber 21 does not reach the upper limit temperature T1, which is the boiling point of the solvent of the raw material solution 1.

[0053] Note that, as shown in FIG. 5, the mist supply through-holes 23 (mist supply slits 21o) and the mist exhaust through-holes 24 (mist intake slits 22i) occupying the lower surface of the temperature adjustment plate 31 are sufficiently narrow, so the temperature of the mist air supply chamber 21 does not rise via the mist supply through-holes 23 and the mist exhaust through-holes 24.

[0054] As a result, the mist film-forming apparatus 101 according to Embodiment 1 suppresses the temperature rise of the mist air supply chamber 21, and stably supplies high-quality raw material solution mist MT to the film-forming object 10, thereby forming a thin film with high accuracy on the surface of the film-forming object 10.

[0055] In the mist film deposition apparatus 101 of Embodiment 1, the temperature control mechanism, with the temperature control plate 31 as its main component, performs a heat treatment as a temperature control process on the mist air supply chamber 21 to suppress the temperature drop in the mist air supply chamber 21 so that the temperature inside the mist air supply chamber 21 does not reach the freezing point of the solvent in the raw material solution 1. Therefore, deterioration of the raw material solution mist MT supplied to the object to be deposited 10 can be avoided.

[0056] The following explanation assumes that the freezing point of the solvent in raw material solution 1 is the lower limit temperature T2. When the temperature inside the mist air supply chamber 21 falls below the lower limit temperature T2, a temperature-dropping malfunction occurs in the raw material solution mist MT, causing the solvent contained in raw material solution 1 to solidify. When this temperature-dropping malfunction occurs, the quality of the raw material solution mist MT deteriorates.

[0057] For example, if the solvent in raw material solution 1 is ethanol, the lower limit temperature T2 (freezing point) is -98°C; if the solvent in raw material solution 1 is propanol, the lower limit temperature T2 is -88.5°C; if the solvent in raw material solution 1 is water, the lower limit temperature T2 is 0°C; and if the solvent in raw material solution 1 is gallium chloride solution, the lower limit temperature T2 is 78°C.

[0058] As a result, the mist deposition apparatus 101 of Embodiment 1 suppresses the temperature drop of the mist air supply chamber 21 and stably supplies high-quality raw material solution mist MT to the object to be deposited 10, thereby enabling the formation of a thin film with high precision on the surface of the object to be deposited 10.

[0059] In the mist film deposition apparatus 101 of Embodiment 1, the temperature control plate 31, which is a main component of the temperature control mechanism, is arranged in a manner that contacts and surrounds the nozzle body 20.

[0060] Therefore, in the first embodiment, the mist film deposition apparatus 101 can perform temperature control processing on the mist air supply chamber 21 without changing the structure of the nozzle body 20 itself from the conventional structure, and the temperature control mechanism including the temperature control plate 31 can perform temperature control processing on the mist air supply chamber 21. For example, the nozzle body 20 can be formed with a structure similar to that of a conventional film deposition nozzle 50.

[0061] In the mist film deposition apparatus 101 of Embodiment 1, residual raw material solution mist MT that did not contribute to the thin film formation of the object to be deposited 10 is temporarily contained in the mist exhaust chamber 22, and then guided to the mist filter 12 via the mist exhaust path 13 by the exhaust function of the exhaust pump 14, where the residual raw material solution mist MT is trapped by the mist filter 12. Then, the gaseous component from which the raw material solution mist MT has been removed is exhausted to the outside from the exhaust pump 14.

[0062] In this way, by exhausting the raw material solution mist MT to the outside of the film deposition nozzle 5A using an exhaust mechanism consisting of a mist filter 12 and an exhaust pump 14, adverse effects on the film deposition object 10 due to residual raw material solution mist MT can be avoided.

[0063] In the mist film deposition apparatus 101 of Embodiment 1, the film deposition nozzle 5A is indirectly heated by the object heating function of the heater stage 11, which is the mounting section, but the mist air supply chamber 21 can be cooled by the cooling process included in the temperature control process of the temperature control mechanism, which includes the temperature control plate 31.

[0064] In addition, the temperature control plate 31 is positioned to surround the nozzle body 20. Therefore, except for the mist supply through-hole 23 and the mist exhaust through-hole 24, the temperature control plate 31 is interposed between the heater stage 11 and the nozzle body 20, which significantly reduces the heating of the film-forming nozzle 5A due to the object heating function of the heater stage 11.

[0065] Therefore, the mist film deposition apparatus 101 of Embodiment 1 can appropriately suppress the temperature rise in the mist air supply chamber 21 by the object heating function of the heater stage 11.

[0066] In the mist film deposition apparatus 101 of Embodiment 1, the film deposition nozzle 5A has a structure in which a temperature control plate 31 is provided surrounding the nozzle body 20, and raw material solution mist MT can be guided without hindrance from the mist transport path 4 to the mist air supply chamber 21 via the mist supply pipe 25.

[0067] In addition, the film-forming nozzle 5A has a structure in which a temperature control plate 31 is provided surrounding the nozzle body 20, allowing the raw material solution mist MT to be exhausted without hindrance from the mist exhaust chamber 22 to the mist exhaust path 13 via the mist exhaust pipe 26.

[0068] <Embodiment 2> Figure 6 is a schematic diagram illustrating the cross-sectional structure of the deposition nozzle 5B in the mist deposition apparatus 102 of Embodiment 2. The XYZ Cartesian coordinate system is shown in Figure 6. The overall configuration of the mist deposition apparatus 102 is the same as that of the mist deposition apparatus 101 shown in Figure 1, except that the deposition nozzle 5A is replaced by the deposition nozzle 5B, and a deposition chamber 16 and a temperature control chamber 17 are newly provided.

[0069] In the following description, components similar to those in Embodiment 1 shown in Figures 1 to 5 will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate. The focus will be on describing the distinctive features of the mist deposition apparatus 102 of Embodiment 2.

[0070] As shown in Figure 6, the film deposition nozzle 5B mainly consists of a nozzle body 20B and a temperature control plate 32.

[0071] The temperature control plate 32, like the temperature control plate 31 in Embodiment 1, is a main component of the temperature control mechanism and is made of a material with low thermal conductivity such as stainless steel or alumina. In addition, the mist film deposition apparatus 102 of Embodiment 2 can perform cooling and heating treatments of the nozzle body 20B to the mist air supply chamber 21 in the temperature control chamber 17, as will be described in detail later.

[0072] As shown in Figure 6, the temperature control plate 32, which is a main component of the temperature control mechanism, is positioned in a manner that it contacts the nozzle body 20B and surrounds the nozzle body 20B.

[0073] The temperature control plate 32 has a mist supply through-hole 23B located below the mist air supply chamber 21, which overlaps with the mist supply slit 21o in a plan view. The temperature control plate 32 also has a mist exhaust through-hole 24B located below the mist exhaust chamber 22, which overlaps with the mist intake slit 22i in a plan view.

[0074] In the mist film deposition apparatus 102 of Embodiment 2, the raw material solution mist MT supplied from the mist supply slit 21o of the mist air supply chamber 21 is taken into the mist exhaust chamber 22 via the mist supply through-port 23B, the mist exhaust through-port 24B, and the mist intake slit 22i.

[0075] The mist film deposition apparatus 102 of Embodiment 2, like the mist film deposition apparatus 101 of Embodiment 1, deposits a thin film on the surface of the object to be deposited by supplying the raw material solution mist MT to the surface of the object to be deposited 10 during the flow process of the raw material solution mist MT from the mist supply slit 21o of the mist air supply chamber 21 of the deposition nozzle 5B to the mist intake slit 22i of the mist exhaust chamber 22.

[0076] The temperature control plate 32, which is the main component of the temperature control mechanism, includes a central plate region 32c and a peripheral plate region 32p. The central plate region 32c is arranged to contact and surround the nozzle body 20B, while the peripheral plate region 32p is arranged to contact the central plate region 32c and not to contact the mist supply chamber 21 and the mist exhaust chamber 22.

[0077] As shown in Figure 6, the mist deposition apparatus 102 of Embodiment 2 further comprises a deposition chamber 16 and at least one temperature-controlled chamber 17. The deposition chamber 16 and the temperature-controlled chamber 17 are separated from each other by a separation wall 19. Therefore, the space within the temperature-controlled chamber 17 becomes a separate space isolated from the deposition chamber 16.

[0078] The deposition chamber 16 houses the object to be deposited 10 placed on the heater stage 11, the nozzle body 20B, and the central plate region 32c. The temperature control chamber 17 houses the peripheral plate region 32p.

[0079] Furthermore, the separation wall 19 between the film deposition chamber 16 and the temperature control chamber 17 is provided with an opening (not shown) for accommodating the plate peripheral region 32p of the temperature control plate 32 within the temperature control chamber 17.

[0080] In the mist deposition apparatus 102 of Embodiment 2, the temperature control process is performed in a temperature control chamber 17, which is at least one temperature control chamber, using temperature control means (heating means or cooling means) (not shown) to directly treat the plate peripheral region 32p of the temperature control plate 32 as the processing area.

[0081] When a cooling process is performed as part of the temperature control process, a cooling means (not shown) is provided within the temperature control chamber 17, which includes the plate peripheral region 32p. By cooling the plate peripheral region 32p with the cooling means, the mist air supply chamber 21 can be cooled via the plate central region 32c. Possible cooling means included in the temperature control means include the refrigerant path 40 used in Embodiment 3, which will be described in detail later. The refrigerant path 40 is provided, for example, within the plate peripheral region 32p.

[0082] When a heating treatment is performed as part of the temperature control process, a heating means (not shown) is provided in the temperature control chamber 17, and by heating the plate peripheral region 32p with the heating means, the mist air supply chamber 21 can be heated via the plate central region 32c. As an example of a heating means included in the temperature control means, a heater 39 used in Embodiment 3, which will be described in detail later, can be considered. The heater 39 is provided, for example, in the plate peripheral region 32p.

[0083] Figures 7 and 8 are schematic diagrams illustrating the detailed structure of the mist deposition apparatus 102 shown in Figure 6. Figures 7 and 8 show the cross-sectional structure of the deposition nozzle 5B, respectively. The XYZ Cartesian coordinate system is indicated in both Figures 7 and 8.

[0084] As shown in Figure 7, the mist supply chamber 21 and the mist exhaust chamber 22 are thermally separated by providing a separation wall of the temperature control plate 32 between them.

[0085] Furthermore, as shown in Figures 7 and 8, the nozzle body 20B further includes a mist supply pipe 25B and a mist exhaust pipe 26B. Figure 7 shows the cross-sectional structure in the XZ plane including the mist air supply chamber 21 and the mist exhaust chamber 22, and Figure 8 shows the cross-sectional structure in the YZ plane including the mist exhaust chamber 22.

[0086] The mist supply pipe 25B is located above the mist air supply chamber 21 and is positioned between the mist transport path 4 and the mist air supply chamber 21, passing through a temperature control plate 32 located above the mist air supply chamber 21, so that the raw material solution mist MT is contained within the mist air supply chamber 21.

[0087] In the mist deposition apparatus 102 of Embodiment 2, the mist supply pipe 25B and a portion of the mist transport path 4 are located inside the deposition chamber 16, while the remaining portion of the mist transport path 4 is located inside the temperature control chamber 17.

[0088] The mist exhaust pipe 26B is located above the mist exhaust chamber 22 and is positioned between the mist exhaust path 13 and the mist exhaust chamber 22, passing through a temperature control plate 32 located above the mist exhaust chamber 22, so that the raw material solution mist MT is discharged into the mist exhaust path 13.

[0089] In the mist film deposition apparatus 102 of Embodiment 2, the mist exhaust pipe 26B and a portion of the mist exhaust path 13 are provided inside the film deposition chamber 16, while the remaining portion of the mist exhaust path 13 is provided inside the temperature control chamber 17.

[0090] (First aspect) Figure 9 is a schematic plan view showing the first aspect of the mist deposition apparatus 102 of Embodiment 2. The XYZ Cartesian coordinate system is shown in Figure 9. Figure 9 shows the planar structure of the mist deposition apparatus 102 in the XY plane as viewed from above.

[0091] In the first embodiment shown in Figure 9, a film deposition nozzle 5B1 is used as the film deposition nozzle 5B, and a circular temperature control plate 321 is used as the temperature control plate 32 of the film deposition nozzle 5B1 when viewed from above. The temperature control plate 321 has a central plate region 32c0 as a plate central region 32c, and a peripheral plate region 32p0 as a plate peripheral region 32p.

[0092] The central plate region 32c0 has a rectangular shape when viewed from above, and the peripheral plate region 32p0 is a single surrounding region that encloses the entire circumference of the central plate region 32c0. The peripheral plate region 32p0 has a circular shape from which the rectangular central plate region 32c0 has been removed.

[0093] Thus, the temperature-controlled plate 321 is classified into a central plate region 32c0 and a peripheral plate region 32p0.

[0094] In the first embodiment shown in Figure 9, a single rectangular deposition chamber 160 is provided as the deposition chamber 16, and a single frame-shaped temperature control chamber 170 is provided as the temperature control chamber 17. The temperature control chamber 170 is arranged to surround the entire perimeter of the deposition chamber 160, and the temperature control chamber 170 and the deposition chamber 160 are separated by a separation wall 190. The separation wall 190 is provided along the four sides of the deposition chamber 160 when viewed from above.

[0095] Therefore, in the first embodiment of Embodiment 3, the temperature control chamber 170 is a single surrounding temperature control chamber that encloses the entire circumference of the film deposition chamber 160. The separation wall 190, which forms the rectangular outer perimeter when the film deposition chamber 160 is viewed from above, is provided with an opening (not shown) for housing the plate peripheral region 32p0 of the temperature control plate 32 inside the temperature control chamber 170.

[0096] (Second aspect) Figure 10 is a schematic plan view showing a second aspect of the mist deposition apparatus 102 of Embodiment 2. The XYZ Cartesian coordinate system is shown in Figure 10. Figure 10 shows the planar structure of the mist deposition apparatus 102 in the XY plane as viewed from above.

[0097] In the second embodiment shown in Figure 10, a film deposition nozzle 5B2 is used as the film deposition nozzle 5B, and a rectangular temperature control plate 322 is used as the temperature control plate 32 for the film deposition nozzle 5B2. The temperature control plate 322 has a rectangular central plate region 32c1 as the central plate region 32c, and a pair of peripheral plate regions 32p1 and 32p2 as the peripheral plate region 32p. Each of the peripheral plate regions 32p1 and 32p2 is a vertically elongated rectangle.

[0098] In the second embodiment of Embodiment 2, the plate peripheral region 32p includes a plate peripheral region 32p1 which is one side peripheral region and a plate peripheral region 32p2 which is the other side peripheral region.

[0099] The central plate region 32c1 is located between the peripheral plate region 32p1, which is one peripheral region, and the peripheral plate region 32p2, which is the other peripheral region. In other words, the peripheral plate regions 32p1 and 32p2 are independent regions separated by the central plate region 32c1.

[0100] In the second embodiment shown in Figure 10, a single rectangular deposition chamber 161 is provided as the deposition chamber 16, and a pair of vertically elongated rectangular temperature control chambers 171 and 172 are provided as the temperature control chambers 17.

[0101] In the second aspect of Embodiment 2, at least one temperature-controlled chamber includes a temperature-controlled chamber 171 which is one side temperature-controlled chamber and a temperature-controlled chamber 172 which is the other side temperature-controlled chamber. Temperature-controlled chambers 171 and 172 are connected to the film-forming chamber 16 1 They are separated by a barrier and are independent of each other.

[0102] One side temperature-controlled chamber, temperature-controlled chamber 171, houses the plate peripheral region 32p1, which is the peripheral region on one side, and the other side temperature-controlled chamber, temperature-controlled chamber 172, houses the plate peripheral region 32p2, which is the peripheral region on the other side. Temperature-controlled chamber 171 and film deposition chamber 161 are separated by a separation wall 191, and temperature-controlled chamber 172 and film deposition chamber 161 are separated by a separation wall 192.

[0103] Furthermore, the separation wall 191 separating the deposition chamber 161 and the temperature-controlled chamber 171 is provided with an opening (not shown) for housing the plate peripheral region 32p1 inside the temperature-controlled chamber 171, and the separation wall 192 separating the deposition chamber 161 and the temperature-controlled chamber 172 is provided with an opening (not shown) for housing the plate peripheral region 32p2 inside the temperature-controlled chamber 17 2 An opening (not shown) is provided for housing it inside.

[0104] In the second embodiment of Embodiment 2, the plate peripheral regions 32p1 and 32p2 are provided independently of each other, and the temperature control chambers 171 and 172 are arranged independently of each other.

[0105] The temperature control process in the second embodiment includes a first partial temperature control process performed with the plate peripheral region 32p1 of the temperature control plate 322 housed in the temperature control chamber 171 as the direct processing area, and a second partial temperature control process performed with the plate peripheral region 32p2 of the temperature control plate 322 housed in the temperature control chamber 172 as the direct processing area. The first and second partial temperature control processes each include a heating process and a cooling process.

[0106] The mist deposition apparatus 102 of Embodiment 2, with this configuration, provides the same effects as the mist deposition apparatus 101 of Embodiment 1, and also provides the unique effects described below.

[0107] In the mist film deposition apparatus 102 of Embodiment 2, temperature control processing is performed in a temperature control chamber 17 (170~172) which is at least one temperature control chamber, with the plate peripheral region 32p (32p0~32p2) of the temperature control plate 32 as the direct processing area. That is, temperature control processing (heating or cooling) is performed on the mist air supply chamber 21 of the nozzle body 20B from the plate peripheral region 32p of the temperature control plate 32, via the plate central region 32c.

[0108] In this case, since the plate peripheral region 32p, which is the processing area for temperature control, and a temperature control means (heating means or cooling means) (not shown) are provided within the temperature control chamber 17, the plate peripheral region 32p and the temperature control means are not affected by the radiant heat of the heater stage 11 housed in the film deposition chamber 16. Therefore, by providing a control system including the temperature control means used for temperature control processing within the temperature control chamber 17, the control system can be protected from the radiant heat of the heater stage 11.

[0109] In addition, since the deposition chamber 16 and the temperature control chamber 17 are separate, the material to be deposited in the deposition chamber 16 is not affected by the temperature control process performed in the temperature control chamber 17.

[0110] In the first embodiment of the mist film deposition apparatus 102 of the second embodiment, shown in Figure 9, the plate peripheral region 32p0, which surrounds the temperature-controlled plate 321 housed in the temperature-controlled chamber 170 that serves as a surrounding temperature-controlled chamber, is the direct processing area for the temperature-controlled process. Therefore, the temperature-controlled process can be performed on the mist air supply chamber 21 of the nozzle body 20B via one unit of the plate peripheral region 32p0 and one unit of the plate central region 32c0.

[0111] Since the surrounding plate region 32p0, which forms the peripheral enclosing region, surrounds the entire periphery of the plate central region 32c0, the temperature control process described above can be performed with relatively uniform heat conduction from the plate surrounding region 32p0 to the plate central region 32c0.

[0112] As a result, the first aspect of Embodiment 2 can minimize the uneven distribution of temperature within the mist air supply chamber 21 and perform temperature control processing on the mist air supply chamber 21.

[0113] In the second embodiment of the mist film deposition apparatus 102 of Embodiment 2, as shown in Figure 10, a combination of the first partial temperature control treatment and the second partial temperature control treatment can be performed as a temperature control treatment (heating treatment or cooling treatment) for the mist air supply chamber 21 of the nozzle body 20B.

[0114] The first partial temperature control process is a temperature control process that goes from the plate peripheral region 32p1, which is one peripheral region, through the plate central region 32c1, and the second partial temperature control process is a temperature control process that goes from the plate peripheral region 32p2, which is the other peripheral region, through the plate central region 32c1.

[0115] <Embodiment 3> Figure 11 is a schematic diagram illustrating the cross-sectional structure of the deposition nozzle 5C in the mist deposition apparatus 103 of Embodiment 3. The XYZ Cartesian coordinate system is shown in Figure 11. The overall configuration of the mist deposition apparatus 103 is the same as that of the mist deposition apparatus 101 shown in Figure 1, with the main difference being that the deposition nozzle 5A has been replaced by the deposition nozzle 5C.

[0116] In the following description, components similar to those in Embodiment 1 shown in Figures 1 to 5 will be denoted by the same reference numerals, and their descriptions will be omitted as appropriate. The focus will be on the features of the film-forming nozzle 5C of the mist film-forming apparatus 103 in Embodiment 3.

[0117] The film-forming nozzle 5C mainly includes a nozzle body 20C and a temperature control mechanism. As shown in Figure 11, the temperature control mechanism mainly includes a temperature control plate 33, a temperature sensor 38, a heater 39, a refrigerant path 40, and a control unit 35 (not shown). The temperature control plate 33 is made of a material with low thermal conductivity, such as stainless steel or alumina.

[0118] The temperature control plate 33 is provided in a manner that surrounds the nozzle body 20C. A temperature sensor 38, a heater 39, and a refrigerant path 40 are provided within the temperature control plate 33.

[0119] As the heater 39, for example, a heater pipe with a shape that generates heat when power is supplied can be considered. By adjusting the power supplied to the heater 39, the heating level of the heating process included in the temperature control process can be adjusted.

[0120] As the refrigerant path 40, for example, a cooling pipe through which refrigerant CL flows can be considered. As the refrigerant fluid CL, "water" can be considered. In addition to "water", oil, ethylene glycol, propylene glycol, etc. may be used as refrigerant CL. By adjusting the flow rate of refrigerant CL flowing through the refrigerant path 40, the cooling level of the cooling process included in the temperature control process can be adjusted.

[0121] In the film-forming nozzle 5C of Embodiment 3, the area surrounding the heater 39 on the temperature control plate 33 becomes the area directly treated by the heating process by the heater 39, and the area surrounding the refrigerant path 40 on the temperature control plate 33 becomes the area directly treated by the cooling process by the refrigerant path 40.

[0122] In other words, in the mist film deposition apparatus 103 of Embodiment 3, the temperature control process is performed by the heater 39 or the refrigerant path 40, with the area surrounding the heater 39 or the area surrounding the refrigerant path 40 on the temperature control plate 33 being the direct processing area.

[0123] The temperature control plate 33 has a mist supply through-hole 23C below the mist air supply chamber 21 that overlaps with the mist supply slit 21o in a plan view. The temperature control plate 33 also has a mist exhaust through-hole 24C below the mist exhaust chamber 22 that overlaps with the mist intake slit 22i in a plan view.

[0124] In the mist film deposition apparatus 103 of Embodiment 3, the raw material solution mist MT supplied from the mist supply slit 21o of the mist air supply chamber 21 is taken into the mist exhaust chamber 22 via the mist supply through-port 23C, the mist exhaust through-port 24C, and the mist intake slit 22i.

[0125] In the mist film deposition apparatus 103 of Embodiment 3, the cooling process included in the temperature control process includes a process of circulating refrigerant CL in the refrigerant path 40, and the heating process included in the temperature control process includes a heating process that brings the heater 39 into an operating state.

[0126] The temperature sensor 38, located within the temperature control plate 33, is positioned close to the mist air supply chamber 21, allowing the temperature information S38 detected by the temperature sensor 38 to be used as temperature information within the mist air supply chamber 21.

[0127] Figure 12 is a schematic diagram illustrating the control system that controls the heater 39 and refrigerant path 40 shown in Figure 11.

[0128] As shown in the figure, the control unit 35 receives temperature information S38 from the temperature sensor 38. Temperature information S38 is information indicating the detected temperature detected by the temperature sensor 38. Therefore, temperature information S38 can be used as information indicating the temperature inside the mist supply chamber 21.

[0129] The control unit 35 performs temperature control processing, which includes controlling the operating state of the heater 39 by providing a heating control signal H35 to the heater 39 based on the temperature information S38, and controlling the operating state of the refrigerant path 40 by providing a cooling control signal C35 to the refrigerant path 40.

[0130] The temperature control process executed by the control unit 35 includes the following steps (a) to (c).

[0131] Step (a)...When the temperature information S38 exceeds the upper limit reference temperature TR1, refrigerant CL is circulated through the refrigerant path 40 to perform refrigerant processing.

[0132] Step (b)...When the temperature information S38 falls below the lower limit reference temperature TR2, the heater 39 is activated and the heating process is performed.

[0133] Step (c)...If the temperature information S38 is below the upper limit reference temperature TR1 and above the lower limit reference temperature TR2, neither the cooling process nor the heating process is performed.

[0134] When step (a) is performed, the control unit 35 provides a cooling control signal C35 to the refrigerant path 40 (including the cooling means) that instructs the start of the flow of refrigerant CL.

[0135] When step (b) is performed, the control unit 35 provides the heater 39 with a heating control signal H35 that instructs it to start operation.

[0136] When step (c) is executed, the control unit 35 applies a cooling control signal C35 to the refrigerant path 40 to instruct the refrigerant CL to stop flowing, and applies a heating control signal H35 to the heater 39 to instruct it to stop operation.

[0137] The upper limit reference temperature TR1 is set to a temperature slightly lower than the upper limit temperature T1 (boiling point of the solvent) mentioned above, and the lower limit reference temperature TR2 is set to a temperature slightly higher than the lower limit temperature T2 (freezing point of the solvent) mentioned above.

[0138] Furthermore, under the condition that steps (a) to (c) described above can be performed, the control unit 35 may be installed inside the temperature control plate 33 or outside the temperature control plate 33, as long as it is within the temperature control chamber 17.

[0139] Figures 13 and 14 are schematic diagrams illustrating the detailed structure of the film deposition nozzle 5C shown in Figure 11. Figures 13 and 14 show the cross-sectional structure of the film deposition nozzle 5C, respectively. The XYZ Cartesian coordinate system is indicated in both Figures 13 and 14.

[0140] As shown in Figure 13, the mist supply chamber 21 and the mist exhaust chamber 22 are thermally separated by a separation wall of a temperature control plate 33 between them.

[0141] As shown in Figures 13 and 14, a temperature sensor 381 is provided on the mist air supply chamber 21 side and a temperature sensor 382 is provided on the mist exhaust chamber 22 side as temperature sensors 38 provided within the temperature control plate 33. In other words, two temperature sensors 381 and 382 are provided within the temperature control plate 33.

[0142] Furthermore, as heaters 39 provided within the temperature control plate 33, heater 391 is provided on the mist air supply chamber 21 side and heater 392 is provided on the mist exhaust chamber 22 side. In other words, two heaters 391 and 392 are provided within the temperature control plate 33.

[0143] Furthermore, as refrigerant paths 40 provided within the temperature control plate 33, a refrigerant path 401 is provided on the mist air supply chamber 21 side, and a refrigerant path 402 is provided on the mist exhaust chamber 22 side. In each of the refrigerant paths 401 and 402, refrigerant CL is circulated by taking in refrigerant CL from the refrigerant inlet 41 and discharging refrigerant CL from the refrigerant outlet 42. In other words, two refrigerant paths 401 and 402 are provided within the temperature control plate 33.

[0144] In the configuration shown in Figures 13 and 14, when the control unit 35 performs temperature control processing, in steps (a) to (c) described above, for example, the temperature information S38 can be information indicating the detected temperature of one of the temperature sensors 381 and 382, ​​or information indicating the average value of the detected temperatures of both temperature sensors 381 and 382.

[0145] In this way, by configuring the temperature sensor 38 with two temperature sensors 381 and 382, ​​it is possible to diversify the temperature detection content for obtaining temperature information S38.

[0146] Furthermore, as a heating process, the heating level can be adjusted by activating one or both of the temperature sensors 381 and 382. As a cooling process, the cooling level can be adjusted by circulating the refrigerant CL through one or both of the refrigerant paths 401 and 402.

[0147] Thus, by configuring the heater 39 with two heaters 391 and 392, the heating process can be diversified, and by configuring the refrigerant path 40 with two refrigerant paths 401 and 402, the cooling process can be diversified.

[0148] Furthermore, as shown in Figures 13 and 14, the nozzle body 20C further includes a mist supply pipe 25C and a mist exhaust pipe 26C. Figure 13 shows the cross-sectional structure in the XZ plane including the mist air supply chamber 21 and the mist exhaust chamber 22, and Figure 14 shows the cross-sectional structure in the YZ plane including the mist exhaust chamber 22, temperature sensor 382, ​​heater 392 and refrigerant path 402 as viewed from the +X direction side of Figure 13.

[0149] The mist supply pipe 25C is located above the mist air supply chamber 21 and is positioned between the mist transport path 4 and the mist air supply chamber 21, passing through a temperature control plate 33 located above the mist air supply chamber 21, so that the raw material solution mist MT is contained within the mist air supply chamber 21.

[0150] The mist exhaust pipe 26C is located above the mist exhaust chamber 22 and is positioned between the mist exhaust path 13 and the mist exhaust chamber 22, passing through a temperature control plate 33 located above the mist exhaust chamber 22, so that the raw material solution mist MT is discharged into the mist exhaust path 13.

[0151] The mist deposition apparatus 103 of Embodiment 3, with this configuration, provides the same effects as the mist deposition apparatus 101 of Embodiment 1, and also provides the unique effects described below.

[0152] In the mist film deposition apparatus 103 of Embodiment 3, the temperature control mechanism operates the heaters 39 (391, 392) provided in the temperature control plate 33 to heat the temperature control plate 33, thereby performing a heating treatment on the mist air supply chamber 21 of the nozzle body 20C as a temperature control process.

[0153] In the mist film deposition apparatus 103 of Embodiment 3, the temperature control mechanism can perform a cooling treatment of the mist air supply chamber of the nozzle body 20C by cooling the temperature control plate 33 by circulating the refrigerant CL through the refrigerant path 40 (401, 402) provided in the temperature control plate 33.

[0154] Furthermore, by providing a temperature sensor 38, a heater 39, and a refrigerant path 40 within the temperature control plate 33, the temperature sensor 38, heater 39, and refrigerant path 40 can be protected from radiant heat from the heater stage 11, which has an object heating function.

[0155] In the mist film deposition apparatus 103 of Embodiment 3, the control unit 35 executes step (a) of the temperature control process to control the temperature so that the temperature information S38 indicated by the temperature sensor 38 (381, 382) does not rise above the upper limit reference temperature TR1, thereby reliably preventing deterioration of the raw material solution mist MT.

[0156] As described above, since the upper limit reference temperature TR1 is set to a temperature slightly lower than the upper limit temperature T1 (the boiling point of the solvent in raw material solution 1), the control unit 35 can reliably avoid the problematic first and second temperature rise malfunction phenomena by performing step (a) described above.

[0157] As a result, the mist film deposition apparatus 103 of Embodiment 3 can accurately suppress the temperature rise of the mist air supply chamber 21 and stably supply high-quality raw material solution mist MT to the film deposition target object 10.

[0158] In the mist film deposition apparatus 103 of Embodiment 3, the control unit 35 performs step (b) of the temperature control process to ensure that the temperature information S38 indicated by the temperature sensor 38 does not fall below the lower limit reference temperature TR2, thereby reliably preventing deterioration of the raw material solution mist MT.

[0159] Since the lower limit reference temperature TR2 is set to a temperature slightly higher than the lower limit temperature T2 (the freezing point of the solvent in the raw material solution 1), the control unit 35 can reliably avoid the problematic temperature drop malfunction phenomenon by performing step (b) described above.

[0160] As a result, the mist film deposition apparatus 103 of Embodiment 3 can accurately suppress the temperature drop in the mist air supply chamber 21 and stably supply high-quality raw material solution mist MT to the film deposition target object 10.

[0161] As shown in Figures 13 and 14, the mist deposition apparatus 103 of Embodiment 3 uses two temperature sensors 381 and 382 as temperature sensors 38, two heaters 391 and 392 as heaters 39, and two refrigerant paths 401 and 402 as refrigerant paths 40.

[0162] Therefore, the mist film deposition apparatus 103 of Embodiment 3 can diversify the temperature detection content, heating content, and cooling content by providing multiple temperature sensors 38, heaters 39, and refrigerant paths 40 within the temperature control plate 33, thereby improving the control accuracy of the temperature control processing by the control unit 35.

[0163] <Other> Although the film-forming nozzles 5A to 5C in Embodiments 1 to 3 all have a mist air supply chamber 21 and a mist exhaust chamber 22, a structure having only a mist air supply chamber 21 is also acceptable.

[0164] Figure 15 is a schematic diagram illustrating the structure of a film deposition nozzle 5D having only a mist air supply chamber 21. The XYZ Cartesian coordinate system is shown in Figure 15.

[0165] As shown in the figure, the film-forming nozzle 5D mainly consists of a nozzle body 20D having only a mist air supply chamber 21, and a temperature control plate 34 that contacts the nozzle body 20D and is positioned to surround the mist air supply chamber 21 of the nozzle body 20D. The temperature control plate 34 is a main component of the temperature control mechanism, similar to the temperature control plates 31 to 33 in Embodiments 1 to 3.

[0166] The mist air supply chamber 21 has a mist supply slit 21o at its lower part, and the temperature control plate 34 has a mist supply through-hole 23D below the mist air supply chamber 21 that overlaps with the mist supply slit 21o in a plan view. Note that the mist supply pipe is not shown in Figure 15.

[0167] A modified version of the mist deposition apparatus can be constructed by replacing the deposition nozzle 5D shown in Figure 15 with the deposition nozzles 5A to 5C of the mist deposition apparatuses 101 to 103 of Embodiments 1 to 3. In the modified version of the mist deposition apparatus, the raw material solution mist MT is supplied onto the object to be deposited 10 from the mist supply slit 21o of the deposition nozzle 5D via the mist supply through-hole 23D.

[0168] In addition, in the modified mist deposition apparatus, the mist filter 12, mist exhaust path 13, and exhaust pump 14 associated with the mist exhaust chamber 22 are omitted.

[0169] Furthermore, while the temperature control plates 31-33 were shown as the main components of the temperature control mechanism in Embodiments 1 to 3, modified versions of the temperature control mechanism in which the temperature control plates 31-33 are omitted are also conceivable.

[0170] As a variation of the temperature control mechanism, for example, in the structure of Embodiment 3 shown in Figures 11 to 14, the temperature control mechanism may be configured using only the control unit 35, temperature sensor 38, heater 39, and refrigerant path 40, excluding the temperature control plate 33. In this case, it is desirable to arrange the temperature sensor 38, heater 39, and refrigerant path 40 in close proximity to the mist supply chamber 21.

[0171] In the mist deposition apparatus 103 of Embodiment 3, other heating means such as a heat pipe and a thermoelectric element using a Peltier element may be used instead of the heater 39.

[0172] In the mist deposition apparatus 103 of Embodiment 3, other cooling means such as a heat pipe, a heat sink, and a thermoelectric element using a Peltier element may be used instead of the refrigerant path 40. When a heat sink is used as a cooling means, for example, a configuration in which the heat sink is attached in close contact with the temperature control plate 33 can be considered.

[0173] Furthermore, while the embodiment 3 shown in Figures 13 and 14 shows a configuration with two temperature sensors 381 and 382, ​​two heaters 391 and 392, and two refrigerant paths 401 and 402, it is also possible to provide three or more temperature sensors 38, three or more heaters 39, and three or more refrigerant paths 40 within the temperature control plate 33. Moreover, the number of temperature sensors 38, heaters 39, and refrigerant paths 40 does not need to be the same.

[0174] Although this disclosure has been described in detail, the above description is illustrative in all respects and the disclosure is not limited thereto. It is understood that countless variations not illustrated may be conceivable without falling outside the scope of this disclosure. [Explanation of symbols]

[0175] 1 Raw material solution 3. Ultrasonic mist generator 4. Mist transport path 5A~5D, 5B1, 5B2 Film deposition nozzles 10. Objects to be coated 11 Heater Stages 12 Mist Filters 13. Mist exhaust path 14. Exhaust pump 16,160,161 Deposition chamber 17,170~172 Control room 21 Mist Air Intake Room 21° Mist supply slit 22 Mist exhaust chamber 22i Mist intake slit 23, 23B~23D Through-holes for mist supply 24, 24B, 24C Mist exhaust through-holes 25, 25B, 25C Mist supply pipe 26, 26B, 26C Mist Exhaust Pipe 31-34, 321, 322 Temperature control plate 32c, 32c0, 32c1 central region of the plate 32p, 32p0~32p2 plate peripheral region 35 Control Unit 38,381,382 Temperature sensors 39,391,392 heaters 40,401,402 Refrigerant pathway 101-103 Mist deposition apparatus MT raw material solution mist

Claims

1. A mist generator that applies ultrasonic vibrations to a raw material solution to produce a raw material solution mist, A mist film deposition apparatus comprising a film deposition nozzle for supplying the aforementioned raw material solution mist to an external object to be film-deposited, The aforementioned film-forming nozzle is A nozzle body having a mist supply chamber for containing the raw material solution mist, The system includes a temperature control mechanism that performs temperature control processing on the mist supply chamber, The raw material solution mist generated by the mist generator is temporarily contained in the mist air supply chamber, and then supplied to the object to be filmed from the mist supply port of the mist air supply chamber. The temperature control process includes a cooling process to cool the mist supply chamber so that the temperature inside the mist supply chamber does not reach the boiling point of the solvent in the raw material solution. The temperature control treatment further includes a heating treatment to heat the mist supply chamber so that the temperature inside the mist supply chamber does not reach the freezing point of the solvent in the raw material solution. The temperature control mechanism includes a temperature control plate. The temperature control plate is arranged in such a manner that it contacts the nozzle body and surrounds the nozzle body. The temperature control plate includes a central region and a peripheral region, the central region being in contact with and surrounding the nozzle body, and the peripheral region being in contact with the central region but not in contact with the mist supply chamber. The mist film deposition apparatus is A film deposition chamber housing the object to be deposited, the nozzle body, and the central region of the temperature control mechanism, The system further comprises at least one temperature-controlled chamber that accommodates the peripheral region of the temperature-controlled mechanism, The film deposition chamber and the at least one temperature control chamber are separated. The temperature control process is performed in at least one temperature control chamber, with the peripheral region of the temperature control plate as the direct processing area. Mist deposition apparatus.

2. A mist film deposition apparatus according to claim 1, The at least one temperature-controlled chamber includes a single perimeter-enclosed temperature-controlled chamber that surrounds the entire perimeter of the film-forming chamber. The aforementioned peripheral region includes a single peripheral enclosing region that surrounds the entire periphery of the central region. Mist deposition apparatus.

3. A mist film deposition apparatus according to claim 1, The aforementioned at least one temperature control chamber includes a one-sided temperature control chamber and a other-sided temperature control chamber that are independent of each other. The aforementioned peripheral region includes one peripheral region and the other peripheral region, which are independent of each other. The central region is located between the one peripheral region and the other peripheral region. The one-side temperature control chamber accommodates the one-side peripheral region, the other-side temperature control chamber accommodates the other-side peripheral region, the one-side temperature control chamber and the film deposition chamber are separated, and the other-side temperature control chamber and the film deposition chamber are separated. The temperature control process includes a first partial temperature control process performed with the peripheral region on one side of the temperature control plate housed in the one-side temperature control chamber as the direct processing area, and a second partial temperature control process performed with the peripheral region on the other side of the temperature control plate housed in the other-side temperature control chamber as the direct processing area. Mist deposition apparatus.

4. A mist film deposition apparatus according to claim 1, The aforementioned temperature control mechanism is A heater provided within the temperature control plate, Including a refrigerant path provided within the temperature control plate, The aforementioned heating process includes a process to bring the heater into an operating state. The cooling process includes a process of circulating a refrigerant through the refrigerant path. Mist deposition apparatus.

5. A mist film deposition apparatus according to claim 4, The aforementioned temperature control mechanism is A temperature sensor provided within the temperature control plate, The system further comprises a control unit that receives temperature information detected by the temperature sensor, The control unit executes a temperature control process that controls the heater and the refrigerant path based on the temperature information. The aforementioned temperature control process is: (a) When the temperature information exceeds the upper limit reference temperature, the step of circulating the refrigerant through the refrigerant path and performing the cooling process, (b) When the temperature information falls below a lower limit reference temperature, the step of turning the heater into an operating state and performing the heating process, Mist deposition apparatus.

6. A mist film deposition apparatus according to claim 5, The temperature sensor includes a plurality of temperature sensors, The heater includes multiple heaters, The refrigerant path includes multiple refrigerant paths. Mist deposition apparatus.

7. A mist film deposition apparatus according to any one of claims 1 to 6, The nozzle body is The system further comprises a mist exhaust chamber that contains the raw material solution mist and has a mist intake port, and the mist exhaust chamber and the mist supply chamber are provided independently of each other. The raw material solution mist supplied from the mist supply port of the mist air supply chamber is taken into the mist exhaust chamber via the mist intake port, and the raw material solution mist is supplied onto the film-forming object during the flow process of the raw material solution mist from the mist supply port to the mist intake port. The mist film deposition apparatus is The system further includes an exhaust mechanism for exhausting the raw material solution mist from the mist exhaust chamber to the outside. Mist deposition apparatus.

8. A mist generator that generates a mist of a raw material solution by applying ultrasonic vibrations to the raw material solution, A mist film deposition apparatus comprising a film deposition nozzle for supplying the aforementioned raw material solution mist to an external object to be film-deposited, The aforementioned film-forming nozzle is A nozzle body having a mist supply chamber for containing the raw material solution mist, The system includes a temperature control mechanism that performs temperature control processing on the mist supply chamber, The raw material solution mist generated by the mist generator is temporarily contained in the mist air supply chamber, and then supplied to the object to be filmed from the mist supply port of the mist air supply chamber. The temperature control process includes a cooling process to cool the mist supply chamber so that the temperature inside the mist supply chamber does not reach the boiling point of the solvent in the raw material solution. The temperature control treatment further includes a heating treatment to heat the mist supply chamber so that the temperature inside the mist supply chamber does not reach the freezing point of the solvent in the raw material solution. The temperature control mechanism includes a temperature control plate. The temperature control plate is arranged in such a manner that it contacts the nozzle body and surrounds the nozzle body. The nozzle body is The system further comprises a mist exhaust chamber that contains the raw material solution mist and has a mist intake port, and the mist exhaust chamber and the mist supply chamber are provided independently of each other. The raw material solution mist supplied from the mist supply port of the mist air supply chamber is taken into the mist exhaust chamber via the mist intake port, and the raw material solution mist is supplied onto the film-forming object during the flow process of the raw material solution mist from the mist supply port to the mist intake port. The mist film deposition apparatus is The system further includes an exhaust mechanism for exhausting the raw material solution mist from the mist exhaust chamber to the outside. The mist supply port is located at the bottom of the mist air supply chamber, and the mist intake port is located at the bottom of the mist exhaust chamber. The aforementioned temperature control plate is Below the mist air supply chamber, there is a mist supply through-hole that overlaps with the mist supply port in a plan view, Below the mist exhaust chamber, there is a mist exhaust through-hole that overlaps with the mist intake port in a plan view, The raw material solution mist supplied from the mist supply port of the mist air supply chamber is taken into the mist exhaust chamber via the mist supply through-port, the mist exhaust through-port, and the mist intake port. The mist film deposition apparatus is It further comprises a mounting section for placing the object to be film-formed, located below the mist supply chamber and the mist exhaust chamber, without contact with the mist supply chamber and the mist exhaust chamber, respectively. The mounting section has a heating function for heating the object to be film-formed. Mist deposition apparatus.

9. A mist generator that generates a mist of a raw material solution by applying ultrasonic vibrations to the raw material solution, A mist film deposition apparatus comprising a film deposition nozzle for supplying the aforementioned raw material solution mist to an external object to be film-deposited, The aforementioned film-forming nozzle is A nozzle body having a mist supply chamber for containing the raw material solution mist, The system includes a temperature control mechanism that performs temperature control processing on the mist supply chamber, The raw material solution mist generated by the mist generator is temporarily contained in the mist air supply chamber, and then supplied to the object to be filmed from the mist supply port of the mist air supply chamber. The temperature control process includes a cooling process to cool the mist supply chamber so that the temperature inside the mist supply chamber does not reach the boiling point of the solvent in the raw material solution. The temperature control treatment further includes a heating treatment to heat the mist supply chamber so that the temperature inside the mist supply chamber does not reach the freezing point of the solvent in the raw material solution. The temperature control mechanism includes a temperature control plate. The temperature control plate is arranged in such a manner that it contacts the nozzle body and surrounds the nozzle body. The nozzle body is The system further comprises a mist exhaust chamber that contains the raw material solution mist and has a mist intake port, and the mist exhaust chamber and the mist supply chamber are provided independently of each other. The raw material solution mist supplied from the mist supply port of the mist air supply chamber is taken into the mist exhaust chamber via the mist intake port, and the raw material solution mist is supplied onto the film-forming object during the flow process of the raw material solution mist from the mist supply port to the mist intake port. The mist film deposition apparatus is An exhaust mechanism for exhausting the raw material solution mist from the mist exhaust chamber to the outside, A mist transport path for transporting the raw material solution mist generated from the mist generator, The system further comprises a mist exhaust path for transporting the raw material solution mist contained in the mist exhaust chamber to the exhaust mechanism, The nozzle body is A mist supply pipe is provided between the mist transport path and the mist supply chamber, passing through the temperature control plate provided at the top of the mist supply chamber, so that the raw material solution mist is contained within the mist supply chamber. The mist exhaust pipe is provided between the mist exhaust chamber and the mist exhaust path, passing through the temperature control plate provided in the upper part of the mist exhaust chamber, so as to allow the raw material solution mist to be discharged into the mist exhaust path. Mist deposition apparatus.

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