Substrate processing apparatus, semiconductor device manufacturing method, and program

Abstract

To provide a technology that can suppress false detection of the presence or absence of a substrate caused by the light receiving part receiving directly reflected light.SOLUTION: It has a holding section having a holding surface capable of holding a substrate, a light emitting section arranged to irradiate irradiated light toward the back surface of the substrate held on the holding surface, a light detecting section having a light receiving section arranged to receive diffuse reflected light of the irradiated light without receiving normal reflected light of the irradiated light, and a control section configured to be able to determine whether the substrate is present by the light receiving state of the light receiving section.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a program.

Background Art

[0002] In a substrate processing apparatus that transfers a substrate using a substrate receiving plate, a technique is disclosed in which a lower displacement sensor detects the presence or absence of a wafer (see, for example, Patent Document 1).

[0003] The substrate processing apparatus of Patent Document 1 includes an upper finger and a lower finger for holding a wafer. A lower displacement sensor emits a laser beam to detect whether a wafer is held on the lower finger.

[0004] The laser beam is reflected off the back surface of the upper finger. If no wafer is held on the lower finger, this reflected laser beam is received by the lower displacement sensor. On the other hand, if a wafer is held on the lower finger, the laser beam is blocked by the wafer and thus is not received by the lower displacement sensor.

[0005] As described above, there is conventionally a technique for confirming the presence or absence of a wafer based on whether the lower displacement sensor receives reflected light.

[0006] As another technique for confirming the presence or absence of a wafer based on whether the lower displacement sensor receives reflected light, there is also a substrate processing apparatus in which a light receiving unit is disposed at a position where it does not receive specular reflected light, which is obtained when the laser beam emitted from the light emitting unit of the lower displacement sensor is reflected off the back surface of the wafer.

[0007] However, in such a substrate processing apparatus, when the wafer is deformed or misaligned, or when the finger is deformed, the reflection angle of the reflected light deviates, and the light receiving unit may receive the specular reflected light. In this case, the lower displacement sensor may falsely detect the presence or absence of the wafer.

Prior Art Literature

[0008] [Patent Document 1] Japanese Patent Publication No. 2010-103252 [Overview of the project] [Problems that the invention aims to solve]

[0009] This disclosure provides a technology that can suppress false detection of the presence or absence of a substrate caused by the light-receiving unit receiving specularly reflected light. [Means for solving the problem]

[0010] According to one aspect of the present disclosure, a photodetection unit is provided comprising: a holding unit having a holding surface capable of holding a substrate; a light-emitting unit arranged to irradiate light toward the back surface of the substrate held on the holding surface; a light-receiving unit arranged to receive diffusely reflected light of the irradiated light but not specularly reflected light of the irradiated light; and a control unit configured to determine the presence or absence of the substrate based on the light-receiving state of the light-receiving unit. [Effects of the Invention]

[0011] According to this disclosure, it is possible to suppress false detection of the presence or absence of a substrate caused by the light receiving unit receiving specularly reflected light. [Brief explanation of the drawing]

[0012] [Figure 1] This is a schematic cross-sectional view showing the substrate processing apparatus in this disclosure. [Figure 2] This is a schematic longitudinal cross-sectional view showing the substrate processing apparatus in this disclosure. [Figure 3] This is a schematic longitudinal cross-sectional view showing the plasma processing unit of the substrate processing apparatus in this disclosure. [Figure 4] This is a schematic longitudinal cross-sectional view of a transport chamber showing an embodiment of the present disclosure. [Figure 5] This is an enlarged view of the main part showing an embodiment of the present disclosure. [Figure 6] This is an enlarged view of the main part showing an embodiment of the present disclosure. [Figure 7] This is an enlarged view of the main part showing an embodiment of the present disclosure. [Figure 8] This is an enlarged view of the main part showing an embodiment of the present disclosure. [Figure 9A] This is an enlarged view of a key part showing the case in the embodiment of the present disclosure where the back surface of the wafer is parallel to the holding surface. [Figure 9B] This is an enlarged view of a key part showing the case in which the back surface of the wafer is inclined with respect to the holding surface in an embodiment of the present disclosure. [Figure 9C] This is an enlarged view of a key part showing the case in which the back surface of the wafer is inclined with respect to the original holding surface in an embodiment of the present disclosure. [Modes for carrying out the invention]

[0013] An aspect of this disclosure will be described below with reference to Figures 1 to 9. Note that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings. In each figure, identical components are denoted by the same reference numeral. However, unless otherwise specified in the specification, each component is not limited to one, and there may be multiple components.

[0014] First, Figures 1 to 3 illustrate an example of the substrate processing apparatus of this disclosure, which is also called an ashing apparatus for performing ashing.

[0015] A substrate processing apparatus 1 includes an EFEM (Equipment Front End Module) 2, a load lock chamber unit 3, a transfer module unit 4, a process chamber unit 5 used as a processing chamber where ashing processing is performed, and a controller 20 as an example of the control unit of the present disclosure. The controller 20 drives and controls the EFEM 2, the load lock chamber unit 3, the transfer module unit 4, and the process chamber unit 5.

[0016] The controller 20 serving as the control unit includes at least an arithmetic unit (CPU), a temporary storage unit (RAM), a storage unit, and an I / O port which are not shown in the figures. The controller 20 is connected to each component of the substrate processing apparatus 1 via the I / O port, calls programs and recipes from the storage unit in response to instructions from an externally connected device (not shown) via an operation unit or a communication unit, and controls the operation of each component in accordance with the content thereof.

[0017] Note that the controller 20 may be configured as a dedicated computer or a general-purpose computer. For example, the controller 20 according to the present embodiment can be configured by preparing a computer-readable external storage device storing the above-mentioned program (for example, magnetic tape, magnetic disks such as flexible disks and hard disks, optical disks such as CDs and DVDs, magneto-optical disks such as MO, and semiconductor memories such as USB Flash Drives and memory cards), and installing the program into a general-purpose computer using the external storage device.

[0018] Furthermore, the means for supplying the program to the computer is not limited to supply via an external storage device. For example, communication means such as the Internet or a dedicated line may be used, or the control unit may receive information via the communication unit and supply the program without going through the external storage device. In addition, an instruction may be issued to the controller 20 using an operation unit such as a keyboard or a touch panel.

[0019] The memory unit and external storage device are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term "recording media" may include only the memory unit, only the external storage device, or both.

[0020] EFEM2 includes a first FOUP (Front Opening Unified Pod) 6, a second FOUP 7, and an atmospheric robot 8, which is a first transport unit that transports wafers 12, as an example of the substrate of this disclosure, from the first FOUP 6 and the second FOUP 7 to the load lock chamber section 3. The first FOUP 6 and the second FOUP 7 each contain 25 wafers 12, and the atmospheric robot 8 has an arm that can move horizontally, forward and backward, and rotate, and a tweezers 10 capable of holding 5 wafers 12 at once is provided at the tip of the arm. The arm extracts 5 wafers 12 at a time from the first FOUP 6 or the second FOUP 7 and transports them.

[0021] The load lock chamber section 3 includes a first load lock chamber 9, a second load lock chamber 11, and a first buffer unit 13 and a second buffer unit 14 that hold the wafers 12 transported from the first FOUP 6 and the second FOUP 7 in the first load lock chamber 9 and the second load lock chamber 11, respectively.

[0022] The first buffer unit 13 and the second buffer unit 14 each comprise a first boat 15 and a second boat 16, and a first index assembly 17 and a second index assembly 18 below them, and the first boat 15 and the second boat 16, and the first index assembly 17 and the second index assembly 18 below them rotate simultaneously on the θ rotation axis 19 of the first load lock chamber 9 and the θ rotation axis 21 of the second load lock chamber 11.

[0023] The transfer module section 4 is equipped with a transport chamber 22, and the first load lock chamber 9 and the second load lock chamber 11 are adjacent to the transport chamber 22. A vacuum arm robot unit 25 is provided through the transport chamber 22, and a double-joint arm 26, used as a second transport section, is provided inside the transport chamber 22. The double-joint arm 26 is extendable and rotatable, and at least two quartz substrate receiving plates (hereinafter referred to as finger sets 27; finger sets 27 are an example of the holding section of this disclosure) are attached to the tip of the double-joint arm 26, stacked on top of each other. These plates have a bifurcated tip and are capable of holding a wafer 12 on their surface.

[0024] The process chamber section 5 comprises a first plasma processing unit 28 and a second plasma processing unit 29 used as processing chambers, and a first plasma generation chamber 31 and a second plasma generation chamber 32 located above them. The first plasma processing unit 28 and the second plasma processing unit 29 are attached to the transport chamber 22 via a first gate valve 23 and a second gate valve 24.

[0025] The first plasma processing unit 28 and the second plasma processing unit 29 are equipped with a first susceptor table 33 and a second susceptor table 34 on which wafers 12 are placed, and a first lifter pin 35 and a second lifter pin 36 are provided penetrating the first susceptor table 33 and the second susceptor table 34, respectively. The first lifter pin 35 and the second lifter pin 36 move up and down in the Z-axis 37 and Z-axis 38 directions, respectively.

[0026] The first plasma generation chamber 31 and the second plasma generation chamber 32 are each equipped with a first reaction vessel 39 and a second reaction vessel (not shown), respectively, and a first high-frequency coil 42 and a second high-frequency coil (not shown) are provided outside the first reaction vessel 39 and the second reaction vessel. Furthermore, by applying high-frequency power to the first high-frequency coil 42 and the second high-frequency coil, the reaction gas for the ashing process introduced from the first gas inlet 44 and the second gas inlet (not shown) is converted into plasma, and the resist on the wafer 12 placed on the first susceptor table 33 and the second susceptor table 34 is ashing (plasma processing) using this plasma.

[0027] Next, the details of the first plasma processing unit 28 will be explained in Figure 3. Note that the second plasma processing unit 29 has the same configuration as the first plasma processing unit 28, so its explanation will be omitted.

[0028] The first plasma processing unit 28 is a high-frequency electrodeless discharge type plasma processing unit that performs ashing, a dry processing method, on semiconductor substrates and semiconductor elements. It comprises a first plasma generation chamber 31, a first process chamber 46 for housing wafers 12 such as semiconductor substrates, and a first high-frequency coil 42. The first plasma processing unit 28 may also include a high-frequency power supply 47 for supplying high-frequency power to the first high-frequency coil 42, and a frequency matching unit 48 for controlling the oscillation frequency of the high-frequency power supply 47. An RF sensor 53 is grounded on the output side of the high-frequency power supply 47 to monitor forward waves, reflected waves, etc. The reflected power monitored by the RF sensor 53 is input to the frequency matching unit 48, which controls the frequency so that the reflected wave is minimized.

[0029] The first plasma generation chamber 31 is configured to be depressurized and supplied with a reaction gas for plasma, and consists of a first reaction vessel 39, a first high-frequency coil 42 wound around the outer circumference of the first reaction vessel 39, and an outer shield 49 arranged around the outer circumference of the first high-frequency coil 42 and electrically grounded.

[0030] The first reaction vessel 39 is positioned so that its axis is normally vertical, and its upper and lower ends are hermetically sealed by a top plate 51 and a first process chamber 46. A gas supply pipe 52, extending from a gas supply unit (not shown) and for supplying the required plasma reaction gas, is attached to the first gas inlet 44 on the top plate 51 of the first reaction vessel 39. The gas supply unit has a function to control the gas flow rate and specifically includes a mass flow controller 54, which is a flow control unit, and a gas supply valve 55.

[0031] Furthermore, a susceptor 57 supported by a plurality of, for example, four, support columns 56 is provided at the bottom of the first process chamber 46 below the first reaction vessel 39, and the susceptor 57 is equipped with a first susceptor table 33 and a substrate heating unit 58 for heating the wafer 12 on the susceptor 57.

[0032] An exhaust plate 59 is positioned below the susceptor 57, and a baffle ring 61 is provided between the susceptor 57 and the exhaust plate 59. The baffle ring 61, the susceptor 57, and the exhaust plate 59 form the first exhaust chamber 62. The baffle ring 61 is cylindrical in shape, and numerous vents are provided on its outer circumference at regular intervals. Therefore, the first exhaust chamber 62 is separated from the first process chamber 46, and also communicates with the first process chamber 46 through the vents.

[0033] The exhaust plate 59 is provided with an exhaust communication hole 63, which connects the first exhaust chamber 62 and the second exhaust chamber 64. An exhaust pipe 65 is connected to the second exhaust chamber 64, and an exhaust device 66 is provided on the exhaust pipe 65.

[0034] Furthermore, the pressure in the first process chamber 46 is adjusted by controlling the gas supply and exhaust rates using the flow control unit and exhaust device 66.

[0035] In the substrate processing apparatus 1 configured as described above, wafers 12 are transported from the first FOUP 6 and second FOUP 7 to the first load lock chamber 9 and second load lock chamber 11. At this time, as shown in Figure 2, the atmospheric robot 8 first inserts tweezers 10 into the pods of the first FOUP 6 and second FOUP 7 and places five wafers 12 on the tweezers 10. At this time, the tweezers 10 and arm of the atmospheric robot 8 are raised and lowered to match the height position of the wafer 12 to be removed.

[0036] After the wafer 12 is placed on the tweezers 10, the atmospheric robot 8 rotates around the θ rotation axis 67 and, through coordinated lateral and forward / backward movement, loads the wafer 12 onto the first boat 15 and second boat 16 of the first buffer unit 13 and second buffer unit 14. At this time, the first boat 15 and second boat 16 move in the direction of the Z axis 68 of the first load lock chamber 9 and the Z axis 69 of the second load lock chamber 11, and the first boat 15 and second boat 16 receive 25 wafers 12 from the atmospheric robot 8. After receiving the 25 wafers 12, the first boat 15 and second boat 16 move in the Z axis 68 and Z axis 69 directions so that the wafer 12 at the bottom of the first boat 15 and second boat 16 is aligned with the height position of the transfer module 4.

[0037] The wafer 12, held by the first buffer unit 13 and the second buffer unit 14, is received by the double-joint arm 26 as it rotates and extends, and mounted on the finger assembly 27. The double-joint arm 26 rotates in the direction of the θ rotation axis 71 of the transfer module 4, and is further extended in the direction of the Y axis 72 of the transfer module 4, transferring the wafer onto the first susceptor table 33 and the second susceptor table 34.

[0038] Here, we will explain the process of transferring the wafer 12 from the finger assembly 27 to the first susceptor table 33 and the second susceptor table 34.

[0039] The finger assembly 27, along with the first lifter pins 35 and the second lifter pins 36, work together to transfer the wafer 12 onto the first susceptor table 33 and the second susceptor table 34. Conversely, in the reverse operation, the processed wafer 12 is transferred from the first susceptor table 33 and the second susceptor table 34 to the first buffer unit 13 and the second buffer unit 14 in the first load lock chamber 9 and the second load lock chamber 11 via the finger assembly 27 and the double-joint arm 26.

[0040] In the substrate processing apparatus 1 configured as described above, wafers 12 are transported to the first load lock chamber 9 and the second load lock chamber 11, the inside of the first load lock chamber 9 and the second load lock chamber 11 are evacuated (vacuum replaced), and the wafers 12 are transported from the first load lock chamber 9 and the second load lock chamber 11 through the transport chamber 22 to the first plasma processing unit 28 and the second plasma processing unit 29, where resist is removed from the wafers 12 (removal process), and the wafers 12 from which the resist has been removed are transported again through the transport chamber 22 to the first load lock chamber 9 and the second load lock chamber 11.

[0041] Next, the wafer detection apparatus in this disclosure will be described in Figures 4 to 7.

[0042] In the figure, 73 is an airtight container 73 that houses the double-joint arm 26. The airtight container 73 has a hollow structure and is open upwards. A ring-shaped lid 74 is placed over the upper end of the airtight container 73, and the upper part of the lid 74 is closed off by an upper transparent resin plate 75 that transmits light. A wafer transport hole 76 is drilled in the wall surface of the airtight container 73, communicating with the first load lock chamber 9 and the second load lock chamber 11, and an openable and closable gate valve 78 is provided to close the wafer transport hole 76. In addition, a wafer transport hole 76' is drilled in the wall surface of the airtight container 73 at a position opposite the wafer transport hole 76, communicating with the first plasma processing unit 28 and the second plasma processing unit 29, and an openable and closable gate valve 78' is provided to close the wafer transport hole 76'. A lower laser-transmitting hole 77 is drilled in the bottom of the airtight container 73, and this lower laser-transmitting hole 77 is closed by a lower transparent resin plate 79 that transmits light.

[0043] In the transfer module section 4 where the wafer 12 is detected, the transport chamber 22 is defined by closing the airtight container 73 with a lid 74, an upper transparent resin plate 75, gate valves 78, 78', and a lower transparent resin plate 79.

[0044] A vacuum arm robot unit 25 is installed in the lower part of the transport chamber 22, penetrating the airtight container 73, and forming a double-jointed arm 26 as a second transport section inside the transport chamber 22. The double-jointed arm 26 has an extendable and rotatable structure, and a finger assembly 27 is attached to the tip of the double-jointed arm 26. The finger assembly 27 has an upper finger 81 and a lower finger 82 of substantially the same shape overlapping. Both the upper finger 81 and the lower finger 82 have a bifurcated tip. The surfaces of the upper finger 81 and the lower finger 82 are each provided with a counterbore 83 for aligning the wafer 12, and the wafer 12 can be placed on the counterbore 83. As shown in Figure 5, the counterbore 83 forms a holding surface 83A capable of holding the wafer 12. The back surface of the upper finger 81 is a diffuse reflecting surface.

[0045] The upper finger 81 is an example of the second retaining part of this disclosure, and the lower finger 82 is an example of the first retaining part of this disclosure. Thus, the finger set 27, which is an example of a retaining part of this disclosure, is arranged in multiple stages and includes the lower finger 82 as the first retaining part located below and the upper finger 81 as the second retaining part located above.

[0046] Furthermore, the lower laser-transmitting hole 77 is drilled in a position that allows it to face the tip of the lower finger 82, which moves via the double-jointed arm 26.

[0047] Upper laser-transmitting holes 84 are drilled at two locations at the base of the upper finger 81, straddling the counterbore 83, and these upper laser-transmitting holes 84 face the surface of the lower finger 82. An upper displacement sensor 85 is positioned above the upper transparent resin plate 75 and facing the finger assembly 27. The upper displacement sensor 85 emits an upper detection laser beam 86 from its light-emitting section 92. The upper detection laser beam 86 passes through the upper laser-transmitting hole 84a outside the counterbore 83, is reflected by the surface at the base of the lower finger 82, and the reflected upper detection laser beam 86 passes through the upper laser-transmitting hole 84b in the counterbore 83 and is received by the light-receiving section 93 of the upper displacement sensor 85, so that it is positioned at an angle.

[0048] Furthermore, since it is sufficient for one of the upper detection laser beams 86 emitted by the light-emitting part 92 of the upper displacement sensor 85 and the upper detection laser beam 86 reflected from the surface of the base of the lower finger 82 to pass through the upper laser transmission hole 84a and the other to pass through the upper laser transmission hole 84b, the upper displacement sensor 85 may be arranged by swapping the positions of the light-emitting part 92 and the light-receiving part 93 so that the upper detection laser beam 86 emitted by the light-emitting part 90 of the upper displacement sensor 85 passes through the upper laser transmission hole 84b and the upper detection laser beam 86 reflected from the surface of the base of the lower finger 82 passes through the upper laser transmission hole 84a.

[0049] Furthermore, although the upper detection laser beam 86 is reflected at the base of the lower finger 82 in this disclosure, the reflection position of the upper detection laser beam 86 only needs to be outside the wafer 12 mounting area of ​​the lower finger 82. Therefore, the reflection position may be changed to the tip of the lower finger 82 or the like depending on the positional relationship between the upper laser transmission hole 84 and the upper displacement sensor 85.

[0050] On the other hand, a notch 87, which is a defect, is provided at the outer end of the tip of the lower finger 82, and the notch 87 faces the back surface of the upper finger 81. Below the lower laser transmission hole 77, at a position facing the lower laser transmission hole 77, a lower displacement sensor 88, as an example of a light detection unit of this disclosure, is disposed. The lower displacement sensor 88 includes a light-emitting unit 90 and a light-receiving unit 91.

[0051] The notch 87 is a light-passing region through which the lower detection laser beam 89, as irradiation light, passes to the back surface of the upper finger 81 when the wafer 12 is not held on the holding surface 83A of the lower finger 82, and also passes through to be received by the light-receiving unit 91, and the reflected light from the back surface of the upper finger 81 passes through.

[0052] As shown in Figure 5, inside the lower displacement sensor 88, the light-emitting unit 90 is positioned to emit a lower detection laser beam 89 as illumination light, directed toward the back surface of the wafer 12 held by the holding surface 83A of the lower finger 82. On the other hand, the light-receiving unit 91 does not receive specularly reflected light from the emitted lower detection laser beam 89, but is positioned to receive diffusely reflected light from the lower detection laser beam 89. Note that "directed toward the back surface of the wafer 12" means that when the wafer 12 is held by the holding surface 83A of the lower finger 82, the lower detection laser beam 89 is irradiated onto the back surface of the wafer 12. This does not include the case where the lower detection laser beam 89 is irradiated onto the periphery of the wafer 12, other than the back surface of the wafer 12.

[0053] More specifically, the light-emitting unit 90 is positioned to irradiate the lower detection laser beam 89 toward the back surface of the wafer 12 held by the holding surface 83A of the lower finger 82, which is the first holding unit, and toward the back surface of the upper finger 81, which is the second holding unit. On the other hand, the light-receiving unit 91 is positioned to receive diffusely reflected light reflected from the back surface of the upper finger 81, which acts as a diffuse reflecting surface, when the wafer 12 is not held by the holding surface 83A of the lower finger 82. Furthermore, the light-receiving unit 91 is positioned closer to the tip of the lower finger 82 than the light-emitting unit 90.

[0054] As shown in Figure 9A, the angle θ1, which is the angle of incidence of the lower detection laser beam 89, which is the irradiating light, onto the holding surface 83A, is greater than 0°, and is an angle at which the specularly reflected lower detection laser beam 89A does not enter the light receiving unit 91. By having an angle θ1 of this magnitude, the incidence of specularly reflected light on the light receiving unit 91 can be suppressed. On the other hand, the diffusely reflected light reflected by the diffuse reflection surface is received by the light receiving unit 91.

[0055] The lower detection laser beam 89 is emitted from the upper surface of the lower displacement sensor 88, which houses the light-emitting unit 90 and the light-receiving unit 91. The upper surface of the lower displacement sensor 88 is inclined with respect to the holding surface 83A of the counterbore 83, so that the angle of incidence of the lower detection laser beam 89 to the holding surface 83A is greater than 0°. The lower displacement sensor 88 is inclined so that its upper surface faces toward the tip of the lower finger 82. The angle θ4 of the inclination angle of the upper surface of the lower displacement sensor 88 with respect to the holding surface 83A of the counterbore 83 is, for example, 3°. This angle is preferably within about 4°, but may be greater than 4°. The lower displacement sensor 88 may also be inclined so that its upper surface faces toward the base end of the lower finger 82. In this way, by adjusting the angle θ4 of the inclination angle of the lower displacement sensor 88, the angle θ1 of incidence of the lower detection laser beam 89 to the holding surface 83A can be easily adjusted.

[0056] When no wafer 12 is placed on the recess 83 of the lower finger 82, the lower detection laser beam 89 emitted from the light-emitting unit 90 passes through the lower laser transmission hole 77, as shown in Figure 4, through the notch 87b in the recess 83, and is reflected off the back surface of the upper finger 81. Since the back surface of the upper finger 81 is a diffuse reflecting surface, the reflected diffuse reflected light, the lower detection laser beam 89B, passes through the notch 87a outside the recess 83, through the lower laser transmission hole 77, and is received by the light-receiving unit 91 of the lower displacement sensor 88.

[0057] On the other hand, when the wafer 12 is placed on the counterbore 83 of the lower finger 82, the lower detection laser beam 89 emitted from the light-emitting unit 90 passes through the lower laser transmission hole 77 and is reflected off the back surface of the wafer 12. If the back surface of the wafer 12 is a specular reflecting surface, as shown in Figure 5, the lower detection laser beam 89A, which is the reflected specular light, is not received by the light-receiving unit 91 of the lower displacement sensor 88.

[0058] Furthermore, the lower detection laser beam 89 is projected at an angle toward the outside of the notch 87 when viewed from the lower finger 82. "The outside of the notch 87" refers to the outer end side of the lower finger 82, which is the right side of the page in Figure 5.

[0059] If the lower detection laser beam 89 is irradiated at an angle toward the "inside" of the notch 87 when viewed from the lower finger 82, specularly reflected light reflected from the back surface of the wafer 12 is likely to be incident on the inner wall surface of the notch 87, i.e., the inner edge 87c of the notch 87 as shown in Figure 5. In this case, diffusely reflected light reflected at the inner edge 87c may be received by the light receiving section 91 of the lower displacement sensor 88. In contrast, by irradiating the lower detection laser beam 89 at an angle toward the "outside" of the notch 87 when viewed from the lower finger 82, the reception of such diffusely reflected light is suppressed.

[0060] Alternatively, the lower displacement sensor 88 may be arranged such that the lower detection laser beam 89 emitted by the light-emitting part 90 of the lower displacement sensor 88 passes through the wafer 12 mounting location, and the lower detection laser beam 89 reflected off the back surface of the upper finger 81 is received by the light-receiving part 91 of the lower displacement sensor 88, outside the lower finger 82 and without passing through the wafer 12 mounting location.

[0061] Next, we will explain the case of detecting wafer 12. The detection of wafer 12, that is, the presence or absence of wafer 12, is determined by the determination unit 20A of the controller 20 based on the light receiving state of the light receiving units 91 and 93.

[0062] The finger assembly 27 moves to a position where the wafer 12 can be detected by the installed upper displacement sensor 85 and lower displacement sensor 88.

[0063] If it is an upper displacement sensor 85, the upper detection laser beam 86 emitted from the light-emitting unit 92 passes through the upper laser transmission hole 84a, is reflected off the surface of the lower finger 82, and takes a path through the upper laser transmission hole 84b. Therefore, if the wafer 12 is not placed on the upper finger 81, the upper detection laser beam 86 is received by the light-receiving unit 93 of the upper displacement sensor 85.

[0064] Furthermore, if the wafer 12 is placed on the counterbore 83 of the upper finger 81, the upper detection laser beam 86 reflected from the surface of the lower finger 82 is blocked by the wafer 12, and therefore the upper detection laser beam 86 is not received by the light receiving section 93 of the upper displacement sensor 85.

[0065] Thus, the upper displacement sensor 85 can determine that no wafer 12 is placed on it if the detection laser beam emitted from the light-emitting unit 92 and reflected is received by the light-receiving unit 93, and can determine that a wafer 12 is placed on it if the detection laser beam is not received by the light-receiving unit 93. In other words, the upper displacement sensor 85 can detect the presence or absence of a wafer 12 placed on the upper finger 81, regardless of whether a wafer 12 is placed on the lower finger 82.

[0066] On the other hand, if the lower displacement sensor 88 is used, and the wafer 12 is not placed on the lower finger 82, the lower detection laser beam 89 emitted from the light-emitting unit 90 passes through the lower laser transmission hole 77 and the notch 87b, and is reflected off the back surface of the upper finger 81, which is a diffuse reflecting surface. The reflected diffuse light, the lower detection laser beam 89B, takes a path through the notch 87a and the lower laser transmission hole 77. For this reason, the diffuse light of the lower detection laser beam 89 is received by the lower displacement sensor 88.

[0067] On the other hand, the back surface of wafer 12 is a specular reflection surface. Therefore, if wafer 12 is placed on the counterbore 83 of the lower finger 82, the lower detection laser beam 89A, which is specular reflection light reflected from the back surface of wafer 12, is not received by the light receiving unit 91 of the lower displacement sensor 88. Also, in this case, diffused light is not received by the light receiving unit 91.

[0068] In this manner, if the light-receiving unit 91 does not receive either specularly reflected or diffusely reflected light, the controller 20 determines that the wafer 12 is being held in the counterbore 83 that forms the holding surface of the lower finger 82.

[0069] In this embodiment, the back surface of the wafer 12 has been described as a specular reflecting surface, but the embodiments of this disclosure are not limited to this. For example, the back surface of the wafer 12 may be a diffuse reflecting surface. In this case, when the wafer 12 is held by the holding surface 83A of the lower finger 82, which is the first holding part, the light receiving unit 91 receives diffuse reflected light as reflected light reflected from the back surface of the wafer 12.

[0070] Here, when the lower detection laser beam 89 emitted from the light-emitting unit 90 is reflected by the diffuse reflection surface, the position at which the diffuse reflected light is received by the light-receiving unit 91 changes depending on the distance between the lower displacement sensor 88 and the diffuse reflection surface. In other words, the position at which the light-receiving unit 91 receives diffuse reflected light from a diffuse reflection surface located close to the lower displacement sensor 88 will be different from that received by a diffuse reflection surface located far away.

[0071] Therefore, when the light receiving unit 91 receives diffusely reflected light, the determination unit 20A of the controller 20 detects the distance between the lower displacement sensor 88 and the diffuse reflective surface based on the position where the diffusely reflected light was received. That is, the determination unit 20A detects the distance between the lower displacement sensor 88 and the back surface of the upper finger 81, or the distance between the lower displacement sensor 88 and the back surface of the wafer 12. Then, the determination unit 20A can determine the presence or absence of the wafer 12 from the detected distance.

[0072] In other words, the holding surface 83A of the lower finger 82 is closer to the lower displacement sensor 88 compared to the back surface of the upper finger 81. Therefore, when the light receiving unit 91 receives diffusely reflected light, the determination unit 20A determines whether this diffusely reflected light is reflected from the back surface of the wafer 12, which is a diffuse reflective surface, or from a diffuse reflective surface other than the back surface of the wafer 12, i.e., reflected from the back surface of the upper finger 81. As a result, the determination unit 20A can determine whether or not the wafer 12 is present.

[0073] Furthermore, when the determination unit 20A detects the distance between the lower displacement sensor 88 and the diffuse reflection surface, it uses the back surface of the upper finger 81 as a reference surface and derives the separation distance from this reference surface as the determination criterion value.

[0074] For example, when the lower detection laser beam 89 is reflected off the back surface of the upper finger 81, the judgment criterion value is derived as "0".

[0075] Furthermore, for example, if the separation distance between the back surface of the upper finger 81 and the holding surface 83A of the lower finger 82 is 10 mm, and the lower detection laser beam 89 is reflected by the back surface of the wafer 12 held on the holding surface 83A, the judgment criterion value is derived as "10".

[0076] The determination unit 20A determines that the wafer 12 is not held by the lower finger 82 if the determination criterion value is less than 5. On the other hand, if the determination criterion value is 5 or greater, it determines that the wafer 12 is held by the lower finger 82. Note that if the back surface of the wafer 12 is a specular reflection surface, neither specular reflection nor diffuse reflection light is received by the light receiving unit 91, and therefore the determination criterion value is not derived.

[0077] In this embodiment, the threshold value for determining whether or not the wafer 12 is held by the lower finger 82 is set to "5". This value is appropriately changed according to the distance between the back surface of the upper finger 81 and the holding surface 83A of the lower finger 82. In this way, the presence or absence of the wafer 12 is determined by detecting the distance between the lower displacement sensor 88 and the diffuse reflection surface, making the determination criteria clearer. This makes it easier to suppress false detections.

[0078] Next, we will describe the case where wafer 12 is deformed or misaligned.

[0079] In the substrate processing apparatus 1, the wafer 12 may deform depending on the substrate processing performed within the apparatus, as shown in Figure 9B. The amount of such deformation of the wafer 12 shows a unique trend for each substrate processing apparatus 1. By taking a sample of the wafer 12 while it is held by the lower finger 82 and measuring it, the average and maximum values ​​of this deformation can be derived.

[0080] Similarly, in the substrate processing apparatus 1, the wafer 12 may be misaligned depending on the substrate processing performed within the apparatus. For example, as shown in Figure 9C, the lower finger 82 may be misaligned or deformed due to the weight or heat of the wafer 12, causing the wafer 12 to be misaligned relative to the holding surface 83A.

[0081] Furthermore, this misalignment may also occur, as an example, when the wafer 12 is positioned misaligned with respect to the holding surface 83A of the counterbore 83.

[0082] The amount of displacement of the wafer 12 shows a unique trend for each substrate processing apparatus 1. By observing the lower finger 82 while it is holding the wafer 12, and the wafer 12 while it is being held by the lower finger 82, the average and maximum values ​​of this displacement can be derived.

[0083] Thus, when the wafer 12 deforms or shifts position relative to the lower finger 82, the back surface of the wafer 12 tilts relative to the holding surface 83A. This tilt angle can be statistically determined from past observed values ​​of the wafer 12 and the lower finger 82.

[0084] As described above, the back surface of the wafer 12 may become tilted relative to the holding surface 83A due to deformation or displacement of the wafer 12. In such cases, the light-emitting unit 90 is positioned such that the incident angle of the lower detection laser beam 89 is greater than or less than the incident angle when the back surface of the wafer 12 is parallel to the holding surface 83A. As a result, the light-receiving unit 91 does not receive specularly reflected light as reflected light.

[0085] Specifically, as shown in Figure 9A, when the back surface of the wafer 12 is parallel to the holding surface 83A, the angle of incidence of the lower detection laser beam 89 to the holding surface 83A is defined as angle θ1. As described above, this angle θ1 is greater than 0°, and is the angle at which the specularly reflected lower detection laser beam 89A does not enter the light receiving unit 91.

[0086] Then, as shown in Figure 9B, if the wafer 12 is deformed and warped, the angle of incidence of the lower detection laser beam 89 on the back surface of the wafer 12 becomes angle θ1 + θ2.

[0087] In Figure 9B, the wafer 12 is aligned upward with respect to the holding surface 83A. An angle θ2 is defined as a positive value when the wafer 12 is curved upward with respect to the holding surface 83A, and a negative value when it is curved downward. Therefore, the angle represented by angle θ1 + θ2 is greater than angle θ1 when the wafer 12 is aligned "upward" with respect to the holding surface 83A.

[0088] Therefore, when the back surface of the wafer 12 is a specular reflecting surface, the lower detection laser beam 89A, which is specularly reflected light, is reflected in a direction away from the light-receiving unit 91 compared to when the back surface of the wafer 12 is parallel to the holding surface 83A. In other words, when the wafer 12 is aligned upward with respect to the holding surface 83A, it becomes difficult for the light-receiving unit 91 to receive specularly reflected light as reflected light.

[0089] In this case, compared to the case where the back surface of the wafer 12 is parallel to the holding surface 83A, the light-emitting unit 90 can position the angle of incidence of the lower detection laser beam 89 with respect to the holding surface 83A to be "smaller".

[0090] On the other hand, the angle represented by angle θ1 + θ2 is smaller than angle θ1 when the wafer 12 is aligned "downward" with respect to the holding surface 83A.

[0091] Therefore, when the back surface of wafer 12 is a specular reflecting surface, the lower detection laser beam 89A, which is specularly reflected light, is reflected in a direction closer to the light-receiving unit 91 compared to when the back surface of wafer 12 is parallel to the holding surface 83A. In other words, when wafer 12 is aligned downwards with respect to the holding surface 83A, specularly reflected light is more easily received by the light-receiving unit 91.

[0092] In such cases, it is preferable to position the light-emitting unit 90 with a "larger" incident angle of the lower detection laser beam 89 with respect to the holding surface 83A, compared to the case where the back surface of the wafer 12 is parallel to the holding surface 83A.

[0093] In this way, the incident angle of the lower detection laser beam 89 with respect to the holding surface 83A can be set based on the warping of the wafer 12. In other words, even if the wafer 12 is warped, it is easy to accurately determine whether or not the wafer 12 is present.

[0094] Furthermore, in Figure 9C, the lower finger 82 is displaced or deformed due to the weight and heat of the wafer 12, causing the wafer 12 to be misaligned relative to its original (in other words, pre-deformation) holding surface 83A. As a result, the wafer 12 is tilted downwards relative to the "original" holding surface 83A. The angle θ3, which is this tilt angle, is defined as a positive value when the wafer 12 is tilted upwards relative to the holding surface 83A, and a negative value when it is tilted downwards. Therefore, the angle represented by angle θ1 + θ3 is smaller than angle θ1 when the wafer 12 is tilted "downwards" relative to the holding surface 83A.

[0095] Therefore, when the back surface of the wafer 12 is a specular reflecting surface, the lower detection laser beam 89A, which is specularly reflected light, is reflected in a direction closer to the light receiving unit 91 compared to when the back surface of the wafer 12 is parallel to the holding surface 83A. In other words, when the wafer 12 is curved downward with respect to the holding surface 83A, specularly reflected light is more easily received by the light receiving unit 91.

[0096] In such cases, it is preferable to position the light-emitting unit 90 with a "larger" incident angle of the lower detection laser beam 89 with respect to the holding surface 83A, compared to the case where the back surface of the wafer 12 is parallel to the holding surface 83A.

[0097] Thus, the incident angle of the lower detection laser beam 89 with respect to the holding surface 83A can also be set based on the positional displacement of the wafer 12 relative to the holding surface 83A. In other words, even if the wafer 12 is misaligned, it is easier to accurately determine whether or not the wafer 12 is present.

[0098] As described above, the lower displacement sensor 88 can detect the presence or absence of a wafer 12 placed on the lower finger 82, regardless of whether or not a wafer 12 is placed on the upper finger 81, making it easy to accurately detect the presence or absence of a wafer 12.

[0099] Furthermore, the position of the lower displacement sensor 88 is adjustable. In other words, the arrangement of the light-emitting unit 90 and the light-receiving unit 91, as well as the emission angle of the lower detection laser beam 89 emitted from the light-emitting unit 90, are adjustable.

[0100] This allows the position of the lower displacement sensor 88 to be adjusted so that even if the wafer 12 held by the holding surface 83A of the lower finger 82 deforms, specular reflected light from the lower detection laser beam 89 reflected off the back surface of the wafer 12 is not introduced into the light receiving unit 91.

[0101] Furthermore, even if the lower finger 82 is displaced or deformed due to heat or the weight of the wafer 12, the position of the lower displacement sensor 88 can be adjusted so that specularly reflected light from the lower detection laser beam 89 reflected off the back surface of the wafer 12 is not introduced into the light receiving unit 91.

[0102] By using the above configuration, it becomes possible to suppress false detection of the wafer 12 due to deformation of the wafer 12, misalignment of the lower finger 82, and sagging of the lower finger 82.

[0103] Furthermore, each of the above-described configurations is controlled by the controller 20. Specifically, according to the program stored in the memory unit of the controller 20, the following steps can be made to be executed by the computer in the substrate processing apparatus: a procedure to hold the wafer 12 as a substrate with the lower finger 82 as a holding part; a procedure to irradiate the wafer 12 with a lower detection laser beam 89 toward the back surface of the wafer 12; a procedure to receive the diffusely reflected light of the lower detection laser beam 89 without receiving the specularly reflected light of the irradiated lower detection laser beam 89; and a procedure to determine the presence or absence of the wafer 12 based on the state of reception of the received reflected light.

[0104] Furthermore, by using the substrate processing apparatus 1 according to this disclosure, a method for manufacturing a semiconductor device can be employed that includes the steps of: holding a wafer 12 as a substrate with a lower finger 82 as a holding part; irradiating the wafer 12 with a lower detection laser beam 89 toward the back surface of the wafer 12; not receiving the specularly reflected light of the irradiated lower detection laser beam 89, but receiving the diffusely reflected light of the lower detection laser beam 89; and determining the presence or absence of the wafer 12 based on the state of reception of the received reflected light.

[0105] Furthermore, it is sufficient for both the upper displacement sensor 85 and the lower displacement sensor 88 to detect the wafer 12 in the transport path, and the upper displacement sensor 85 and the lower displacement sensor 88 do not need to be located in the same position.

[0106] Furthermore, in the embodiments described herein, the upper part of the lid 74 of the airtight container 73 is sealed with an upper transparent resin plate 75 that transmits light. However, the portion that transmits light only needs to be large enough for the upper displacement sensor 85 to emit and receive the upper detection laser beam 86. Therefore, the lid 74 may be made of a material with even higher airtightness, and only the portion through which the upper detection laser beam 86 passes may be made transparent.

[0107] According to this embodiment, one or more of the following effects can be obtained.

[0108] As shown in Figure 5, in this substrate processing apparatus 1, the lower detection laser beam 89 from the light-emitting unit 90 is irradiated toward the back surface of the wafer 12 held on the holding surface 83A of the lower finger 82.

[0109] Therefore, when the wafer 12 is "held" on the holding surface 83A, the lower detection laser beam 89 is reflected by the back surface of the wafer 12. In this case, if the back surface of the wafer 12 is a specular reflecting surface, the light receiving unit 91 does not receive the lower detection laser beam 89A as specularly reflected light. Also, if the back surface of the wafer 12 is a diffuse reflecting surface, the light receiving unit 91 receives the diffusely reflected light as reflected light.

[0110] On the other hand, if the substrate is "not held" by the holding surface, the lower detection laser beam 89 will be reflected from a surface other than the back surface of the substrate. Even in this case, the light receiving unit 91 will not receive specularly reflected light as reflected light, but will be able to receive diffusely reflected light as reflected light.

[0111] Furthermore, the determination unit 20A determines the presence or absence of the wafer 12 based on the light reception state of the light receiving unit 91. In other words, the presence or absence of the wafer 12 can be determined by whether or not specular reflected light is received by the light receiving unit 91, and, if diffuse reflected light is received by the light receiving unit 91, by the light reception state of that diffuse reflected light.

[0112] Thus, in the substrate processing apparatus 1, the program stored in the memory unit of the controller 20, and the method for manufacturing a semiconductor device using the substrate processing apparatus 1 according to this embodiment, the presence or absence of the wafer 12 can be determined in the light receiving unit 91 without receiving the lower detection laser beam 89A, which is specularly reflected light. This suppresses false detection of the presence or absence of the wafer 12 caused by the light receiving unit 91 receiving specularly reflected light. Suppressing false detection of the presence or absence of the wafer 12 improves production efficiency.

[0113] Furthermore, in this substrate processing apparatus 1, if the light receiving unit 91 does not receive either specularly reflected light or diffusely reflected light, the determination unit 20A can determine that a wafer 12, whose back surface is a specularly reflected surface, is being held on the holding surface 83A of the lower finger 82. In this way, if the light receiving unit 91 does not receive either specularly reflected light or diffusely reflected light, it is easy to determine whether or not a wafer 12 is present.

[0114] On the other hand, if the light receiving unit 91 receives diffusely reflected light, the determination unit 20A can determine whether or not the wafer 12 is present by determining whether the diffusely reflected light is reflected light from the back surface of the wafer 12 or reflected light from a diffuse reflective surface other than the back surface of the wafer 12.

[0115] Specifically, the determination unit 20A detects the distance between the lower displacement sensor 88 and the diffuse reflective surface based on the diffuse reflected light received by the light receiving unit 91, and determines the presence or absence of the wafer 12 from the detected distance.

[0116] In other words, when the finger set 27, which serves as the holding part, is arranged in multiple stages, the holding surface 83A of the lower finger 82 is closer to the lower displacement sensor 88 than the back surface of the upper finger 81. Therefore, when the light receiving unit 91 receives diffusely reflected light, the determination unit 20A of the controller 20 can determine whether the wafer 12 is present or absent by determining whether the diffusely reflected light is reflected from the back surface of the wafer 12, which is a diffuse reflective surface, or reflected from a diffuse reflective surface other than the back surface of the wafer 12, i.e., from the back surface of the upper finger 81.

[0117] Thus, even when the light receiving unit 91 receives diffusely reflected light, the presence or absence of the wafer 12 can be determined by detecting the distance between the lower displacement sensor 88 and the diffuse reflection surface based on the diffusely reflected light received by the light receiving unit 91. In other words, the presence or absence of the wafer 12 can be determined even if the light receiving unit 91 cannot receive specularly reflected light. Furthermore, the presence or absence of the wafer 12 can be determined regardless of whether the back surface of the wafer 12 is a specular reflection surface or a diffuse reflection surface.

[0118] Furthermore, in this substrate processing apparatus 1, the finger assemblies 27, which serve as holding parts, are arranged in multiple stages. The light receiving unit 91 can receive diffusely reflected light reflected from the back surface of the upper finger 81. As a result, when the determination unit 20A detects the distance between the lower displacement sensor 88 and the diffuse reflection surface, it can use the back surface of the upper finger 81 as a reference surface and derive the distance from this reference surface as the determination criterion value. If the back surface of the upper finger 81, which is relatively close to the holding surface 83A of the lower finger 82, can be used as the reference surface, the optical path of the lower detection laser beam 89 can be shortened, making it less likely for errors to occur in the determination.

[0119] Furthermore, in this substrate processing apparatus 1, a notch 87 is formed in the lower finger 82. When the upper finger 81 and the lower finger 82, which has substantially the same shape as the upper finger 81, are overlapping, providing such a notch 87 in the lower finger makes it easier to irradiate the lower detection laser beam 89 toward the back surface of the wafer 12 held by the holding surface 83A of the lower finger 82, and toward the back surface of the upper finger 81.

[0120] In the above embodiment, the finger set 27 as the retaining part consists of two parts: an upper finger 81 and a lower finger 82. However, the embodiments of this disclosure are not limited to this. For example, a configuration may be provided with a finger further above the upper finger 81. In other words, the "multi-stage" retaining part in this disclosure includes three or more retaining parts.

[0121] Furthermore, the holding portion may consist of a single finger. In this case, the upper finger 81 is omitted. The upper displacement sensor 85 is also omitted. Moreover, if the wafer 12 is not held by the lower finger 82, the lower detection laser beam 89 is reflected inside the transport chamber 22 by the diffuse reflection surface of a portion of the upper finger 81 other than the back surface. In other words, regardless of the number of fingers, the effect of suppressing false detection of the presence or absence of the wafer 12 caused by the light receiving portion 91 receiving specularly reflected light can be obtained.

[0122] Furthermore, in the above embodiment, the light-receiving unit 91 of the lower displacement sensor 88 is located on the tip side of the lower finger 82, below the light-emitting unit 90, but the embodiments of this disclosure are not limited to this. For example, the light-receiving unit 91 may be located on the base end side of the lower finger 82, below the light-emitting unit 90.

[0123] The above-described embodiments illustrate an example of suppressing false detection of the presence or absence of a substrate by a single-wafer substrate processing apparatus that processes one or several substrates at a time. This disclosure is not limited to the above embodiments and can be suitably applied, for example, when forming a film using a batch-type substrate processing apparatus 1 that processes multiple substrates at a time. Furthermore, the above-described embodiments illustrate an example of forming a film using a substrate processing apparatus having a cold-wall type processing furnace. This disclosure is not limited to the above embodiments and can be suitably applied when forming a film using a substrate processing apparatus having a hot-wall type processing furnace.

[0124] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained. Furthermore, the above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications. [Explanation of Symbols]

[0125] 12. Wafer (substrate) 20 Controller (Control Unit) 82 Lower finger (holding part) 83A Holding surface 88 Lower displacement sensor (light detection unit) 90 Light-emitting part 91 Light receiving part

Claims

1. A holding part having a holding surface capable of holding a substrate, A light-emitting unit is positioned to emit light toward the back surface of the substrate held on the holding surface, and a light-receiving unit is positioned toward the front end of the holding part from the light-emitting unit and is positioned to receive diffusely reflected light of the emitted light but not specularly reflected light of the emitted light, and the upper surface of the light-detecting unit is inclined toward the front end of the holding part. A control unit is configured to determine the presence or absence of a substrate by detecting the distance between the light detection unit and the diffuse reflective surface based on the diffuse reflected light received by the light receiving unit, and determining from the detected distance whether the diffuse reflected light is reflected light from the back surface of the substrate or reflected light from a diffuse reflective surface other than the back surface of the substrate. Equipped with, Circuit board processing equipment.

2. The control unit is configured to determine that there is no substrate if the distance is less than a predetermined threshold, and to determine that there is a substrate if the distance is equal to or greater than a predetermined threshold. The substrate processing apparatus according to claim 1.

3. If the light receiving unit does not receive either specularly reflected light or diffusely reflected light, the control unit determines that the substrate is being held on the holding surface, as described in claim 1.

4. The angle of incidence of the irradiated light onto the holding surface is greater than 0°, and the angle is such that the specularly reflected light, as reflected light, does not enter the light-receiving section. The substrate processing apparatus according to claim 1.

5. When the substrate deforms or shifts position, causing the back surface of the substrate to tilt relative to the holding surface, The light-emitting portion is positioned such that the incident angle is greater than or less than the incident angle when the back surface of the substrate is parallel to the holding surface, so that the light-receiving portion does not receive the specularly reflected light as the reflected light. The substrate processing apparatus according to claim 4.

6. The substrate processing apparatus according to claim 5, wherein the incident angle is an angle set based on the curvature of the substrate.

7. The substrate processing apparatus according to claim 5, wherein the incident angle is an angle set based on the positional displacement of the substrate with respect to the holding surface.

8. The substrate processing apparatus according to claim 4, wherein the irradiation light is emitted from the upper surface of the photodetector, and the upper surface of the photodetector is inclined with respect to the holding surface, so that the angle of incidence of the irradiation light to the holding surface is greater than 0°.

9. The holding section is arranged in multiple stages and includes a first holding section located below and a second holding section located above. The light-emitting unit is arranged to emit light toward the back surface of the substrate held by the holding surface of the first holding unit, and toward the back surface of the second holding unit. The substrate processing apparatus according to claim 1, wherein the light receiving unit is arranged to receive diffusely reflected light reflected from the back surface of the second holding unit, which acts as a diffuse reflecting surface, when the substrate is not held on the holding surface of the first holding unit.

10. When the back surface of the substrate is a diffuse reflecting surface, The light-receiving unit receives diffuse reflected light as reflected light reflected from the back surface when the substrate is held on the holding surface of the first holding unit. The substrate processing apparatus according to claim 9, wherein the control unit is configured to detect the distance between the light detection unit and the back surface of the second holding unit, or the distance between the light detection unit and the back surface of the substrate, based on the diffusely reflected light received by the light receiving unit, and to determine the presence or absence of the substrate from the detected distance.

11. The substrate processing apparatus according to claim 9, wherein the first holding portion has a notch that serves as a light-passing region, through which the irradiated light passes when the substrate is not held on the holding surface and irradiates the back surface of the second holding portion, and through which the reflected light from the back surface of the second holding portion passes and is received by the light-receiving portion.

12. The aforementioned notch is formed at the outer end of the tip of the first retaining portion, which is formed to be bifurcated at its tip. The substrate processing apparatus according to claim 11, wherein the irradiation light is irradiated at an angle toward the tip side of the first holding portion when viewed from the base end side of the first holding portion.

13. The second light detection unit comprises a second light-emitting unit arranged to emit light toward a surface other than the holding surface of the first holding unit, and a second light-receiving unit arranged to receive the emitted light. The substrate processing apparatus according to claim 9, wherein the control unit is configured to determine the presence or absence of the substrate on the holding surface of the second holding unit based on the light receiving state of the second light receiving unit.

14. The substrate processing apparatus according to claim 4, wherein the position of the light detection unit is adjustable, and the angle of incidence of the irradiated light onto the holding surface is adjustable.

15. A process of holding the substrate in the holding part, A step of irradiating the substrate with light by a light-emitting unit provided in a light-detecting unit that is inclined so that its upper surface faces the tip of the holding unit, The process involves receiving diffusely reflected light from the irradiated light, without receiving specularly reflected light from the irradiated light, provided in the light detection unit and positioned on the tip side of the holding unit from the light-emitting unit; A step of determining the presence or absence of the substrate based on the light reception state of the received reflected light, It has, In the step of determining the presence or absence of the substrate, the distance between the light detection unit and the diffuse reflective surface is detected based on the diffuse reflected light received in the step of receiving the diffuse reflected light, and the presence or absence of the substrate is determined by determining from the detected distance whether the diffuse reflected light is reflected light reflected from the back surface of the substrate or reflected light reflected from a diffuse reflective surface other than the back surface of the substrate. A method for manufacturing a semiconductor device.

16. The procedure for holding the substrate in the holding part, A procedure for irradiating the back surface of the substrate with light emitted by a light-emitting unit provided in a light-detecting unit that is inclined so that its upper surface faces the tip of the holding unit, A procedure for receiving diffusely reflected light from an irradiated light, without receiving specularly reflected light from the irradiated light, provided in the light detection unit and positioned on the tip side of the holding unit from the light-emitting unit, A procedure for determining the presence or absence of the substrate based on the light reception state of the received reflected light, A program that causes a circuit board processing device to execute a program via a computer, A program that determines the presence or absence of the substrate by, in the procedure for determining the presence or absence of the substrate, detecting the distance between the light detection unit and the diffuse reflective surface based on the diffuse reflected light received in the step of receiving the diffuse reflected light, and determining from the detected distance whether the diffuse reflected light is reflected light reflected from the back surface of the substrate or reflected light reflected from a diffuse reflective surface other than the back surface of the substrate.

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