Improved application of modulation source in plasma processing system

Abstract

To provide an improved application of modulating supplies in a plasma processing system.SOLUTION: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module is configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.SELECTED DRAWING: Figure 12

Description

[Technical Field]

[0001] (Claim of Priority under 35 U.S.C. §119) The present application for patent claims the priority benefit of Provisional Application No. 62 / 588,255, entitled "IMPROVED APPLICATION OF AN EV SOURCE IN PLASMA PROCESSING EQUIPMENT", filed on November 17, 2017, assigned to the assignee of the present specification, and expressly incorporated herein by reference.

[0002] The present disclosure relates generally to plasma processing. In particular, but not by way of limitation, the present disclosure relates to the interoperability of devices coupled to a plasma processing system. [Background Art]

[0003] Plasma processing systems for etching and deposition have been used for decades, but advances in processing techniques and device technology continue to create increasingly complex systems. At the same time, the reduction in dimensions of structures formed on workpieces requires increasingly precise control and interoperability of plasma processing equipment. Current control methodologies and associated systems are unable to address several problems associated with complex systems of today and the future, therefore there is a need for new and improved control for heterogeneous but interdependent plasma processing equipment. [Summary of the Invention] [Means for Solving the Problems]

[0004] According to one aspect, the plasma processing system includes at least one modulation source that modulates plasma properties, the modulation of plasma properties having a repetition period T. The plasma processing system includes a synchronization module configured to transmit a synchronization signal with a synchronization signal repetition period that is an integer multiple of T to at least one device connected to the plasma processing system. The plasma processing system also includes a waveform communication module configured to communicate the characteristics of a characterized waveform with a repetition period T to at least one device connected to the plasma system, thereby enabling synchronization of multiple devices connected to the plasma processing system, the characterized waveform with a repetition period T containing at least one of information about the modulation of the plasma or information about a desired waveform for a device connected to the plasma processing system.

[0005] Another aspect can be characterized as a control method for a plasma processing system. This method includes the step of modulating plasma properties using a modulation source, wherein the modulation of plasma properties has a repetition period T. The method also includes the step of characterizing a waveform with a repetition period T, which contains at least one of information about the modulation of the plasma or a desired waveform for equipment connected to the plasma processing system, thereby generating a waveform dataset. The waveform dataset is transmitted to at least one piece of equipment connected to the plasma system, and a synchronization signal with a synchronization period that is an integer multiple of T is transmitted to at least one piece of equipment connected to the plasma system.

[0006] Another aspect may be characterized as a plasma processing control system, including a waveform characterization module configured to generate a waveform dataset relating to the output waveforms of equipment connected to the plasma system. A waveform repetition module is included to determine the repetition period T relating to the equipment connected to the plasma system, and a waveform communication module is configured to communicate the waveform dataset to at least one of the equipment connected to the plasma system or another equipment. The plasma processing system also includes a waveform communication module and a synchronization module. The waveform communication module is configured to communicate the waveform dataset to at least one of the equipment connected to the plasma system or another equipment, and the synchronization module is configured to transmit synchronization pulses to the equipment connected to the plasma system with a synchronization pulse repetition period that is an integer multiple of T. The present invention provides, for example, the following items: (Item 1) A plasma processing system, A modulation source for modulating plasma properties, wherein the modulation of the plasma properties has a repetition period T, and comprises at least one modulation source. A synchronization module, the synchronization module is configured to transmit a synchronization signal having a synchronization signal repetition period that is an integer multiple of T to at least one device connected to the plasma processing system, A waveform communication module is configured to communicate the characteristics of a characterized waveform with a repetition period T to at least one device connected to a plasma system, enabling synchronization of a plurality of devices connected to the plasma processing system, wherein the characterized waveform with a repetition period T includes at least one of information about the modulation of the plasma or information about a desired waveform of a device connected to the plasma processing system. A plasma processing system equipped with [the following features]. (Item 2) The plasma processing system according to item 1, wherein T is the shortest time duration for which the waveforms of all the devices modulating the plasma properties of the plasma processing system are periodic with period T. (Item 3) The plasma processing system according to item 1, wherein the modulation source is configured to modulate the plasma properties by modulating an electromagnetic field that affects the plasma. (Item 4) The plasma processing system described in item 1, wherein the modulation source is a remote plasma source. (Item 5) The plasma processing system according to item 1, wherein the modulation source is configured to modulate the plasma properties by modulating the properties of the gas in the plasma system. (Item 6) The plasma processing system according to item 1, wherein the modulation source is configured to alternate the surface potential of the workpiece in the plasma between two or more distinctly different levels. (Item 7) The plasma processing system according to item 1, wherein the characteristics of the waveform with a repetition period T include the characteristics of the output waveform generated by the modulation source. (Item 8) The plasma processing system according to item 1, wherein the characteristics of the waveform with a repetition period T include the characteristics of the plasma properties. (Item 9) The plasma processing system according to item 1, wherein the characteristics of the waveform with a repetition period T include the characteristics of the surface potential of the workpiece in the plasma. (Item 10) The plasma processing system according to item 1, wherein the characteristics of the waveform with a repetition period T include desired characteristics of the output of the at least one device connected to the plasma processing system. (Item 11) The plasma processing system described in item 1, wherein at least one of the devices is a generator. (Item 12) The plasma processing system according to item 11, wherein the generator synchronizes the properties of the output of the generator with the characterized waveform having a repetition period T. (Item 13) The plasma processing system according to item 12, wherein the synchronization includes accelerating or delaying the change in the nature of the generator output with respect to the change in the characterized waveform with a repetition period T. (Item 14) The plasma processing system according to item 12, wherein the properties of the output are at least one of voltage, current, power, frequency, or generator source impedance. (Item 15) The plasma processing system according to item 11, wherein the generator is one of an RF generator or a DC generator. (Item 16) The plasma processing system according to item 15, wherein the generator is capable of absorbing power from the plasma processing system. (Item 17) The plasma processing system according to item 16, wherein the generator is a load capable of absorbing only the power from the plasma system. (Item 18) The plasma processing system according to item 1, wherein at least one of the devices is configured to measure the properties of the plasma processing system. (Item 19) The plasma processing system according to item 18, wherein the measurement includes at least one of the following: measurement of plasma properties, properties of the power delivered to the plasma system, or properties of the gas delivered to the plasma system. (Item 20) The plasma processing system according to item 18, wherein the measurement is synchronized with the characterized waveform having the repetition period T. (Item 21) The plasma processing system according to item 20, wherein the synchronization includes accelerating or delaying the measurement of the plasma system properties with respect to the change in the characterized waveform with respect to the repetition period T. (Item 22) The plasma processing system according to item 1, wherein at least one of the devices is an impedance matching network. (Item 23) The plasma processing system according to item 22, wherein the impedance matching network synchronizes the impedance measurement with the characterized waveform having the repetition period T. (Item 24) The plasma processing system according to item 1, wherein at least one of the devices is a remote plasma source. (Item 25) The plasma processing system according to item 1, wherein the synchronization signal, which has a synchronization signal repetition period that is an integer multiple of T, includes an indication of the start of the synchronization signal repetition period and at least one indication that a certain time period has elapsed since the start of the synchronization signal repetition period. (Item 26) The plasma processing system according to item 25, wherein the start of the synchronization signal repetition cycle is indicated by a pulse of a first duration, and at least one indication that a certain time period has elapsed since the start of the synchronization signal repetition cycle is indicated by a pulse of a second duration different from the first duration. (Item 27) A synchronous signal with a synchronous signal repetition period that is an integer multiple of T, including an indication of the start of the synchronous signal repetition period, the indication of the start of the synchronous signal repetition period being further modified at least once to indicate a time or to indicate that a new waveform is valid, according to item 1, the plasma processing system. (Item 28) A control method for a plasma processing system, wherein the method is The method involves modulating the plasma properties using a modulation source, wherein the modulation of the plasma properties has a repetition period T. characterizing the waveform with said repetition period T to generate a waveform dataset, wherein said waveform dataset includes at least one of information about modulation of said plasma and information about a desired waveform of equipment connected to said plasma processing system; transmitting the waveform dataset to at least one piece of equipment connected to a plasma system; transmitting a synchronization signal having a synchronization signal repetition period that is an integer multiple of T to said at least one piece of equipment connected to said plasma system A method comprising:. (Item 29) determining a fundamental repetition period Tf, wherein Tf is the shortest time length at which the waveforms of all of a plurality of pieces of equipment that modulate plasma properties of said plasma processing system are periodic with period Tf; transmitting said synchronization signal having said synchronization repetition period that is an integer multiple of Tf to said at least one piece of equipment connected to said plasma processing system The control method according to item 28, comprising:. (Item 30) The control method according to item 28, comprising modulating said plasma properties by modulating an electromagnetic field that affects said plasma using said modulation source. (Item 31) The control method according to item 28, wherein said modulation source is a remote plasma source. (Item 32) The control method according to item 28, comprising modulating said plasma properties by modulating properties of a gas in said plasma processing system using said modulation source. (Item 33) The control method according to item 28, comprising modulating said plasma properties by alternating a surface potential of a workpiece in said plasma between two or more distinctly different levels using said modulation source. (Item 34) The control method according to item 28, wherein the characteristics of said waveform with repetition period T include characteristics of an output waveform generated by said modulation source. (Item 35) The control method according to item 28, wherein the characteristics of the waveform with a repetition period T include the characteristics of the plasma properties. (Item 36) The control method according to item 28, wherein the characteristics of the waveform with a repetition period T include the characteristics of the surface potential of the workpiece in the plasma. (Item 37) The control method according to item 28, wherein the characteristics of the waveform with a repetition period T include desired characteristics of the output of the at least one device connected to the plasma processing system. (Item 38) The control method according to item 28, comprising receiving the waveform dataset and the synchronization signal in the generator. (Item 39) The control method according to item 38, comprising synchronizing the properties of the output of the generator with a waveform having a repetition period T characterized by the waveform dataset. (Item 40) The control method according to item 39, comprising accelerating or delaying the change in the properties of the generator output with respect to a change in a waveform with a repetition period T characterized by the waveform dataset. (Item 41) The control method according to item 39, wherein the properties of the output are at least one of voltage, current, power, frequency, or generator impedance. (Item 42) The control method according to item 38, wherein the generator is one of an RF generator or a DC generator. (Item 43) The control method according to item 42, wherein the generator is capable of absorbing power from the plasma processing system. (Item 44) The control system according to item 43, wherein the generator is a load capable of absorbing only the power from the plasma system. (Item 45) The control method according to item 28, wherein the at least one device measures the properties of the plasma system. (Item 46) The control method according to item 45, wherein the measurement includes at least one of the following: measurement of plasma properties, properties of power delivered to the plasma system, or properties of gas delivered to the plasma system. (Item 47) The control method according to item 45, comprising synchronizing the measurement with a waveform having a repetition period T characterized by the waveform dataset. (Item 48) The control method according to item 46, wherein the synchronization includes accelerating or delaying the measurement of the plasma system properties with respect to changes in the waveform with a repetition period T characterized by the waveform dataset. (Item 49) The control method according to item 28, wherein the at least one of the devices is an impedance matching network. (Item 50) The control method according to item 49, comprising synchronizing an impedance measurement with a waveform having a repetition period T characterized by the waveform dataset. (Item 51) The control method according to item 28, wherein the at least one device is a remote plasma source. (Item 52) The control method according to item 28, wherein the synchronization signal, which has a synchronization signal repetition period that is an integer multiple of T, includes an indication of the start of the synchronization signal repetition period and at least one indication that a certain time period has elapsed since the start of the synchronization signal repetition period. (Item 53) The control method according to item 52, wherein the start of the synchronization signal repetition cycle is indicated by a pulse of a first duration, and at least one indication that a certain time period has elapsed since the start of the synchronization signal repetition cycle is indicated by a pulse of a second duration different from the first duration. (Item 54) The control method according to item 28, wherein a synchronization signal having a synchronization signal repetition period that is an integer multiple of T includes an indication of the start of the synchronization signal repetition period, and the indication of the start of the synchronization signal repetition period is further modified at least once to indicate a time or to indicate that a new waveform is valid. (Item 55) A plasma processing control system, A waveform characterization module, wherein the waveform characterization module is configured to generate a waveform dataset relating to the output waveform of equipment connected to a plasma system, A waveform repeating module, wherein the waveform repeating module is configured to determine the repeating period T for equipment connected to the plasma system, A waveform communication module, wherein the waveform communication module is configured to communicate the waveform dataset to at least one of the devices connected to the plasma system or another device, A synchronization module, wherein the synchronization module is configured to transmit synchronization pulses having a synchronization pulse repetition period that is an integer multiple of T to equipment connected to the plasma system, and A plasma processing control system equipped with the following features. (Item 56) The plasma processing control system according to item 55, wherein the waveform characterization module is configured to generate the waveform dataset as a set of time-output value pairs and to represent the output waveform of the instrument during the repetition period T. (Item 57) The plasma processing control system according to item 56, wherein each time output value pair includes a time value and at least one of a voltage value, a current value, or a power value to represent the output waveform of the device during the repetition period T. (Item 58) The waveform characterization module is configured to generate multiple waveform datasets, each of which characterizes a corresponding output waveform, and each of which is output from a corresponding device among a plurality of devices connected to the plasma system. The waveform repeating module is configured to determine the basic repeating period Tf, which is the shortest time length during which all of the multiple output waveforms are periodic with period Tf. The waveform communication module is configured to communicate at least one of the waveform datasets relating to one of the plurality of devices to one of the plurality of devices connected to the plasma system. The synchronization module is configured to transmit synchronization pulses with a synchronization pulse repetition period that is an integer multiple of Tf to at least one of a plurality of devices. The plasma processing control system described in item 55. (Item 59) The plasma processing control system according to item 58, wherein the synchronization module is configured to transmit a synchronization tick between the synchronization pulses if one of the oscillators of the plurality of instruments connected to the plasma system is not accurate enough to maintain time with sufficient precision within the basic repetition period Tf. (Item 60) The plasma processing control system according to item 59, wherein the synchronization tick is distinguished from the synchronization pulse by using a pulse having a different duration with respect to the synchronization tick than that of the synchronization pulse. (Item 61) A non-transient computer-readable medium comprising instructions stored thereon, wherein the instructions are for performing plasma processing for execution by a processor or for configuring a field-programmable gate array, and the instructions are The method involves modulating the plasma properties using a modulation source, wherein the modulation of the plasma properties has a repetition period T. Characterizing a waveform with a repetition period T that includes at least one of the information about the modulation of the plasma or a desired waveform of equipment connected to the plasma processing system, and generating a waveform dataset. Transmitting the waveform dataset to at least one device connected to the plasma system, A synchronization signal with a synchronization signal repetition period that is an integer multiple of T is transmitted to the at least one device connected to the plasma system. A non-transient, computer-readable medium containing instructions for performing a certain action. (Item 62) A plasma processing system, A means for modulating the plasma properties of a plasma, wherein the modulation of the plasma properties has a repeating period T, Means for characterizing a waveform with the aforementioned repetition period T and generating a waveform dataset, wherein the waveform dataset includes at least one of the following: information about the modulation of the plasma or a desired waveform of equipment connected to the plasma processing system; Means for transmitting the waveform dataset to at least one device connected to the plasma system, Means for transmitting a synchronization signal with a synchronization signal repetition period that is an integer multiple of T to the at least one device connected to the plasma system, A plasma processing system equipped with [the following features]. (Item 63) A plasma processing system, A bias supply source for applying an output waveform having a repetition period T, A synchronization module, wherein the synchronization module is configured to transmit a synchronization signal repetition period that is an integer multiple of T to at least one other device connected to the plasma system, A waveform communication module, wherein the waveform communication module is configured to communicate the characteristics of the output waveform generated by the bias supply source to at least one other device connected to the plasma system, and A plasma processing system equipped with [the following features]. (Item 64) A control method for a plasma processing system, wherein the method is Characterizing the output waveform of the bias source and generating a waveform dataset, To determine the repetition period T of the output waveform of the bias supply source, The waveform dataset is transmitted to at least one other device connected to the plasma system. The synchronization signal repetition period, which is an integer multiple of T, is transmitted to the equipment coupled to the plasma system. Methods that include... (Item 65) A plasma processing system, Plasma chamber and A modulation source coupled to a plasma chamber for modulating the plasma properties of a plasma in a plasma processing chamber, wherein the modulation of the plasma properties has a repetition period T, and comprises at least one modulation source. Multiple other plasma processing devices coupled to the plasma chamber, A synchronous controller comprising a non-transient medium, the non-transient medium comprising instructions stored thereon, the instructions for performing plasma processing for execution by a processor or for configuring a field-programmable gate array, the instructions Characterizing the waveform of the at least one modulation source with the aforementioned repetition period T, and generating a waveform dataset, Transmitting the waveform dataset to at least one of the multiple other devices connected to the plasma system, A synchronization signal with a synchronization signal repetition period that is an integer multiple of T is transmitted to at least one of the plurality of other devices connected to the plasma system. A synchronous controller and instructions for performing the following actions A plasma processing system equipped with [the following features]. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 illustrates an embodiment of a plasma processing system designed to achieve control over plasma properties.

[0008] [Figure 2] Figure 2 depicts another embodiment of a plasma processing system designed to achieve control over plasma properties using a remote plasma source rather than a single source generator or multiple source generators.

[0009] [Figure 3] Figure 3 depicts yet another embodiment of a plasma processing system designed to achieve control over plasma properties using a remote plasma source and an integrated bias power delivery system.

[0010] [Figure 4] Figure 4 depicts the plasma processing system, including the bias supply source.

[0011] [Figure 5] Figure 5 depicts another implementation of a plasma processing system incorporating multiple bias sources.

[0012] [Figure 6] Figure 6 is a schematic diagram illustrating aspects of exemplary bias sources.

[0013] [Figure 7] Figure 7 includes a graph of the voltage waveform output from the bias supply source, a graph of the corresponding sheath voltage, and a corresponding switch timing diagram.

[0014] [Figure 8] Figure 8A depicts an implementation that uses two voltage sources to provide voltage to the bias source depicted in Figure 11. Figure 8B depicts another implementation that uses two voltage sources to provide voltage to the bias source depicted in Figure 11. Figure 8C depicts yet another implementation that uses two voltage sources to provide voltage to the bias source depicted in Figure 11.

[0015] [Figure 9] Figure 9A depicts an implementation that uses three voltage sources to provide voltage to the bias source depicted in Figure 11. Figure 9B depicts another implementation that uses three voltage sources to provide voltage to the bias source depicted in Figure 11. Figure 9C depicts yet another implementation that uses three voltage sources to provide voltage to the bias source depicted in Figure 11.

[0016] [Figure 10] Figure 10 is a block diagram illustrating the synchronous control component.

[0017] [Figure 11] Figure 11 shows a method that can be considered using a synchronous control component.

[0018] [Figure 12] Figure 12 illustrates the aspect of synchronizing the modulation source with other equipment connected to the plasma processing system.

[0019] [Figure 13] Figure 13 is a flowchart illustrating an exemplary method that can be performed from the master device.

[0020] [Figure 14] Figure 14 is a flowchart illustrating an exemplary method that can be performed by a slave device. [Figure 15]Figure 15 is a block diagram illustrating components that may be used to implement the control aspects disclosed herein. [Modes for carrying out the invention]

[0021] The word “exemplary” is used herein to mean “serving as an example, instance, or illustration of a particular embodiment.” Any embodiment described herein as “exemplary” is not necessarily construed as being preferable or advantageous to any other embodiment.

[0022] Preface: The flowcharts and block diagrams in the following figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present invention. In this regard, some blocks in these flowcharts or block diagrams may represent modules, segments, or portions of code comprising one or more executable instructions for implementing a defined logical function. It should also be noted that in some alternative implementations, the functions described in the blocks may occur in an order other than that shown in the diagrams. For example, two blocks shown consecutively may actually be executed substantially in parallel, or blocks may sometimes be executed in reverse order depending on the functionality involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, may be implemented by a dedicated hardware-based system or a combination of dedicated hardware and computer instructions that performs the defined function or action.

[0023] The following disclosure generally refers to wafer plasma processing, but the processing may include any substrate processing within a plasma chamber. In some cases, objects other than substrates may be processed using the systems, methods, and apparatus disclosed herein. In other words, this disclosure applies to the plasma processing of any object in a low-pressure plasma processing chamber to result in surface changes, subsurface changes, deposition, or removal by physical or chemical means.

[0024] This disclosure may utilize plasma processing and substrate biasing techniques as disclosed in US Nos. 9287092, US Nos. 9287086, US Nos. 9435029, US Nos. 9309594, US Nos. 9767988, US Nos. 9362089, US Nos. 9105447, US Nos. 9685297, and US Nos. 9210790. These applications as a whole are incorporated herein by reference. However, it should be recognized that any reference herein to any prior publication (or information derived therefrom) or any publicly known matter does not constitute an acceptance or endorsement, or in any form of suggestion, that the prior publication (or information derived therefrom) or publicly known matter is conventional, routine, or that this specification forms part of common general knowledge in the field of the relevant practice.

[0025] For the purposes of this disclosure, the source generator's energy is primarily intended for the generation and sustainment of plasma, while the “bias source”'s energy is primarily intended for the generation of a surface potential to attract ions and electrons from the plasma.

[0026] Figure 1 shows an embodiment of a plasma processing system comprising several devices directly and indirectly coupled to a plasma chamber 101 containing plasma 102. The devices include a vacuum handling and gas delivery device 106, a bias generator 108, a bias matching network 110, a bias measurement and diagnostic 111, a source generator 112, a source matching network 113, a source measurement and diagnostic 114, a measurement and diagnostic 115, and a system controller 116. The embodiment in Figure 1 and other embodiments described herein exemplify the complexity of plasma processing systems, and the depiction of plasma systems herein helps to convey the interrelationships of the devices coupled to the plasma chamber 101.

[0027] An example of the interrelationship of plasma processing equipment is the influence (and control thereof) of modulation sources (e.g., source generator 112, bias generator 108, and other modulation sources discussed further herein) on plasma properties. More specifically, modulation sources can induce strong modulation of plasma properties, such as impedance presented by plasma 102, in the equipment of plasma processing system 100. Plasma modulation can also cause aliasing of plasma property measurements. Additional details regarding the effects of modulation of plasma properties are discussed further herein.

[0028] Figure 1 shows a plasma processing system 100 (e.g., a deposition or etching system) that includes a plasma chamber 101 containing a workpiece (e.g., a wafer) 103. Several bias electrodes 104 are connected to a bias matching network 110, to which several bias generators 108 are connected, via a bias measurement and diagnostic system 111. The bias electrodes 104 may be housed in electrostatic chucks to hold the workpiece 103 in place. This may involve the integration of a high-voltage DC power source 107 into the system. In many applications, a single bias electrode 104 is used, but the use of multiple bias electrodes 104 may be used to achieve the desired spatial control.

[0029] The bias generator 108 depicted in Figure 1 may be an RF generator with a lower frequency (e.g., 400 kHz to 13.56 MHz) that applies a sinusoidal waveform. Also shown is a set of source electrodes 105 connected to several source generators 112 through a source measurement and diagnostic system 114 and a source matching network 113. In many applications, power from a single source generator 112 is connected to one or more source electrodes 105. The source generators 112 may be higher frequency RF generators (e.g., 13.56 MHz to 120 MHz). Vacuum maintenance, gas delivery, and wafer handling equipment 106 may be implemented to complete the system, and additional measurement and diagnostic equipment 115 may optionally be present (e.g., optical spectroscopy equipment).

[0030] In the embodiment of Figure 1, the system controller 116 controls the entire system through a system control bus 117. The system control bus 117 can also be used to collect information from the equipment of the plasma processing system. In addition to the system controller 117, there may be a dedicated inter-system communication 118 that can be used, for example, to control the source matching network 113 from the source generator 112, or to exchange information between subsystems without involving the system controller bus 117. There may also be a quasi-real-time communication link 119 between subsystems. This may take the form of a reference oscillator to phase-lock different generators on the system and provide waveform synchronization signals, arc detection signals, etc. While a single source generator 112 is common, it is also common to have multiple source generators 112 and multiple bias generators 108 to achieve desired control over the distribution of desired plasma density and ion energy. One or more of the source generators 112 and / or bias generators 108 can modulate the plasma properties and be considered a modulation source.

[0031] Figure 2 shows an embodiment of a plasma processing system 200 in which the source generator 112 is replaced by a remote plasma source 205. Those skilled in the art will understand that the remote plasma source 205 may include an excitation source (e.g., an RF generator) and a plasma generation chamber configured and positioned to produce the plasma supplied to the plasma chamber 101. Although the remote plasma source 205 is outside the plasma chamber 101, the remote plasma source 205 may be coupled to the plasma chamber 101 to form a continuous volume using the plasma chamber 101. In some embodiments, though less likely in many embodiments, the remote plasma source 205 may modulate the plasma properties of the plasma 102 within the plasma chamber 101. Also, if the remote plasma source 205 modulates the plasma properties of the plasma 102, one or more of the remote plasma source 205 and / or bias generator 108 may be considered modulation sources.

[0032] Figure 3 shows another embodiment of the plasma processing system in which multiple bias generators are replaced by an integrated bias power delivery system 308. Such integration can reduce system complexity and redundancy by using, for example, a common DC power source for the RF generators, a common controller, an auxiliary power source, a measurement system, etc., although the output to the plasma chamber 101 is still a combination of one or more RF frequencies and / or DC signals. Many other modifications exist, for example, using a source generator and an integrated bias power delivery system, or using an integrated source and a bias power delivery system, etc.

[0033] Referring next to Figure 4, we see yet another embodiment of the plasma processing system, which utilizes a bias source 408 (instead of bias generator 108) for more precise control over the distribution of ion energy. As shown, the bias source 408 may apply a periodic waveform to several different electrodes 104, or alternatively, separate bias sources 408 may be coupled to each electrode 104 (not shown in Figure 4). As shown in Figure 5, it is considered that multiple bias sources 508 may be used in conjunction with multiple generators 109. It should be noted that the embodiments described with reference to Figures 1-5 are not mutually exclusive, and various combinations of the depicted equipment may be employed.

[0034] Referring next to Figure 6, what is shown is a general representation of an exemplary bias source 608 that may be used to realize bias sources 408, 508. As shown, bias source 608 utilizes three voltages V1, V2, and V3. Since the output Vout is capacitively coupled through a C chuck, it is generally not necessary to control the DC level of Vout, and the three voltages can be reduced to two by selecting one of V1, V2, or V3 to be ground (0V). A separate chuck source 107 may also be used, and therefore it is not necessary to control the DC level of Vout. If a separate chuck source is not used, all three voltages can be controlled to control the DC level of Vout. Not shown for clarity, two switches S1 and S2 may be controlled by a switch controller via electrical or optical connections to allow the switch controller to open and close switches S1, S2, as disclosed below. The described switches S1 and S2 may be implemented by unipolar, single-throw switches, and in non-limiting embodiments, switches S1 and S2 may be implemented by silicon carbide metal oxide field-effect transistors (SiC MOSFETs).

[0035] In this implementation, voltages V1, V2, and V3 may be DC source voltages. As shown, the first switch S1 is configured to switchably connect the first voltage V1 to the output Vout through an inductive element, and the second switch S2 is configured to switchably couple the second voltage V2 to the output Vout through an inductive element. In this implementation, the two switches are connected to a common node 670, and a common inductive element L1 is located between the common node and the output node Vout. Other arrangements of the inductive elements are also possible. For example, there may be two separate inductive elements, one of which connects S1 to Vout and the other connects S2 to Vout. In another embodiment, one inductive element may connect S1 to S2, and the other inductive element may connect either S1 or S2 to Vout.

[0036] Referring to Figure 6, Figure 7 is simultaneously referenced, depicting 1) the voltage waveform of the bias source 608 output at Vout, 2) the corresponding sheath voltage, and 3) the corresponding switch positions of switches S1 and S2. During operation, the first switch S1 is momentarily closed along the first portion 760 of the voltage waveform (between voltages V0 and Va) to increase the voltage level at the output node Vout to a first voltage level Va. Level Va is maintained along the second portion 762 of the waveform. The second switch S2 is then momentarily closed along the third portion 764 of the waveform to decrease the voltage level at the output node Vout to a second voltage level Vb. Note that S1 and S2 are open except for short time periods. As shown, the negative voltage swing along the third portion 764 affects the sheath voltage (Vsheath), and therefore the magnitude of Va-Vb can be controlled to affect the sheath voltage.

[0037] In this embodiment, a third voltage V3 is applied to the output node Vout through the second inductive element L2, further reducing the voltage level at the output node along the fourth portion 766 of the voltage waveform. As shown in Figure 7, a negative voltage ramp along the fourth portion 766 can be established to maintain the sheath voltage by compensating for ions colliding with the substrate.

[0038] Therefore, S1 instantaneously connects a first voltage V1 to the output Vout through a first inductor L1, then disconnects it, and after a certain time period, S2 connects a second voltage (e.g., ground) to the output Vout through the first inductor L1, then disconnects it. A third voltage V3 is coupled to the output Vout through a second inductor L2. In this implementation, the first voltage V1 may be higher than the third voltage V3, and the instantaneous connection and disconnection of the first voltage V1 to the output Vout increases the voltage of the output Vout along the first portion 760 of the voltage waveform to a first voltage level Va, which is sustained along the second portion 762 of the waveform. The first voltage level Va may be higher than the first voltage V1, and the second voltage V2 (e.g., ground) may be lower than the first voltage level Va. The momentary connection and subsequent disconnection of the second voltage V2 reduces the output voltage Vout in the third section 764 to a second voltage level Vb that is below the second voltage V2 (e.g., ground).

[0039] In examples, V1 may be -2,000 VDC, V2 may be ground, V3 may be -5,000 VDC, V0 may be -7,000 VDC, Vb may be -3,000 VDC, and Va may be 3,000 VDC. However, these voltages are merely illustrative to provide context for the relative magnitudes and polarities of the voltages described with reference to Figures 6 and 7.

[0040] Next, referring to Figures 8A-8C, what is shown is a possible arrangement of two DC voltage sources to provide the voltages V1, V2, and V3 depicted in Figure 6. In Figure 8A, V2 is grounded and forms a common node between the two DC voltage sources. In Figure 8B, V1 is grounded and V2 forms a common node between the DC voltage sources. Also in Figure 8C, V1 is grounded and forms a common node between each of the two DC voltage sources.

[0041] In some embodiments, as shown in Figures 9A, 9B, and 9C, three DC voltage sources may be used to apply three voltages V1, V2, and V3. As shown in Figure 9A, each of the three DC voltage sources may be coupled to ground, and each of the three DC voltage sources provides a corresponding voltage among V1, V2, and V3. In Figure 9B, one of the DC voltage sources is grounded, and the three DC voltage sources are arranged in series. In Figure 9C, one of the DC voltage sources is positioned between ground and V2, and each of the DC voltage sources is coupled to V2.

[0042] The bias source 608 depicted in Figure 6 is simply an embodiment of the bias source 608 capable of producing an output at Vout as shown in Figure 7. Other modifications are shown and described in the patents incorporated herein by reference. Also disclosed in the patents incorporated by reference are different modulation schemes that can be applied to the fundamental source waveform (at Vout) to achieve a desired distribution of ion energy and control the average power applied to the plasma chamber by the bias source.

[0043] One modulation scheme involves modulating a third portion 764 of the voltage waveform to produce a desired ionic energy for ions colliding with the workpiece 103 in the plasma chamber 101. In an embodiment, bias sources 408, 508, and 608 may alternate the magnitude of the third portion 764 of the voltage waveform between two or more levels, resulting in alternating the surface potential of the workpiece 103 in the plasma between two or more distinctly different levels. In another embodiment, the slope of a fourth portion 766 of the voltage waveform may be adjusted to vary the level of current supplied to the electrode 104 (compensating for ionic currents colliding with the workpiece 103) and to achieve a desired spread of ionic energy (e.g., around the central ionic energy). The proper use of bias sources 408, 508, and 608 as bias generators in many plasma processing systems requires careful system design. System synchronization and communication

[0044] Modulation sources such as the source generator 112, bias generator 108, remote plasma source 205, and bias supply sources 408, 508, 608 can cause strong modulation of the plasma properties. Embodiments of plasma properties include, but are not limited to, the impedance presented by the plasma, plasma density, sheath capacitance, and the surface potential of the workpiece 103 in the plasma 102. As discussed above, modulation of the voltage and / or current applied by bias supply sources 408, 508, 608 is one potential cause of modulation of the plasma properties.

[0045] The source generator 112 may also modulate the plasma properties by modulating the electromagnetic field affecting the plasma 102. In particular, the source generator may pulse the power (e.g., RF power) applied by the source generator 112. Furthermore, the magnitude of the voltage of the power applied by the source generator 112 may be changed. The addition of one or more additional source generators 112 adds additional complexity. It is also considered that while the source generator 112 is applying pulsed power, one or more bias sources 408, 508, 608 may modulate the voltage (Vout shown in Figure 6), and therefore the sheath voltage. Thus, control over plasma properties (e.g., plasma density and ion energy) is a challenge, and spatial control over plasma properties is a particular challenge.

[0046] As discussed above, the remote plasma source 205 may replace or enhance the source generator 112. However, the remote plasma source 205 may also be a modulation source configured to modulate the plasma properties by modulating the properties of the gas in the plasma chamber 101.

[0047] In addition to control challenges, one modulation source may affect the operation of another modulation source (e.g., in a detrimental manner). In a specific, non-limiting embodiment, bias sources 408, 508, and 608 may impart power at levels that result in plasma modulation, and in turn, cause undesirable changes in the load impedance presented to source generator 112. In addition, strong plasma modulation can also cause aliasing of plasma property measurements. Aliasing can interfere with accurate measurements of forward and reflected power, and therefore prevent the operator from detecting detrimental power levels, and / or interfere with proper control of at least one of the source matching network 113 or bias matching network 110.

[0048] Synchronization of equipment connected to a plasma system can mitigate the adverse effects of plasma modulation (e.g., harmful power and aliasing), and as a result, synchronization is highly desirable. However, the complex time-varying aspects of plasma modulation (e.g., from potentially multiple modulation sources) can make synchronization difficult.

[0049] Referring to Figure 10, shown is a synchronization controller 1016 configured to synchronize the components of the plasma processing system, which may include a modulation source and other equipment that does not modulate the plasma 102. As shown, the synchronization controller 1016 includes a user interface 1050, a waveform characterization module 1052, a waveform repetition module 1054, a waveform communication module 1056, and a synchronization module 1058.

[0050] The components of the synchronous controller 1016 described may be implemented by hardware, firmware, software and hardware, or a combination thereof. The functional components of the synchronous controller 1016 may be distributed around the plasma processing system and replicated within equipment connected to the plasma processing system. Furthermore, as will be discussed further herein, the synchronous controller 1016 may be implemented as a master device or a slave device.

[0051] The user interface 1050 allows the operator to interact with the plasma processing system so that the operator can control aspects of synchronization and receive information about the conditions of the equipment and the plasma chamber 101. The user interface 1050 may be implemented by one or more of the following, for example, a touchscreen, a pointing device (e.g., a mouse), a display, and a keyboard.

[0052] The waveform characterization module 1052 is configured to generate a waveform dataset that generally characterizes the waveforms of the plasma processing system (e.g., the waveform of plasma modulation or the waveform output (or desired to be output) by the equipment). The waveform repetition module 1054 is configured to determine the repetition period T with respect to the equipment connected to the plasma system, and the waveform communication module 1056 is configured to communicate the waveform dataset to at least one of the equipment connected to the plasma processing system or another equipment. The synchronization module 1058 is configured to transmit synchronization pulses with a synchronization pulse repetition period (an integer multiple of T) to one or more equipment connected to the plasma system.

[0053] With reference to Figure 10, Figure 11 is shown, which is a flowchart illustrating a method that can be considered in relation to the plasma processing system and the synchronous controller 1016. As shown, the plasma properties are modulated using a modulation source, and the modulation has a repetition period T (block 1100). It should be noted that in many embodiments, T is the repetition period of the plasma modulation and not the cycle period of the modulation source. As a result, the modulation source may have an output with a different repetition period than the modulation of the plasma properties. For example, one modulation source may have a repetition period of 200 microseconds, and another modulation source may have a repetition period of 500 microseconds, resulting in the plasma 102 being modulated with a repetition period T of 1 millisecond. In some embodiments, T is the shortest time length for which the waveforms of all multiple instruments modulating the plasma properties of the plasma processing system are periodic with period T.

[0054] As shown in Figure 11, the waveform characterization module 1052 may characterize a waveform with a repetition period T, which contains at least one of the following: information about a desired waveform of a plasma modulation or an instrument connected to a plasma processing system, and generate a waveform dataset (block 1102).

[0055] Referring briefly to Figure 12, what is shown is information about the waveforms in the form of exemplary output waveforms 1201 of bias sources 408, 508, and 608, waveform 1203 corresponding to the calculated effective voltage on the surface of workpiece 103, the corresponding synchronization signal 1204, and waveform dataset 1205. In Figure 12, output waveform 1201 is the actual output (at Vout) of bias sources 408, 508, and 608 with a fundamental period T 1202. Waveform 1203 is the calculated effective voltage on the surface of workpiece 103 (e.g., the sheath voltage, which is the voltage of workpiece 103 relative to plasma 102). Also shown is the synchronization pulse 1204 (also referred to as synchronization signal 1204) with a synchronization signal repetition period that is an integer multiple of T. Waveform dataset 1205 also contains information about waveform 1203, and therefore the characterized waveform (shown in Figure 12) is waveform 1203. Waveform 1203 represents the alternating surface potential of the workpiece between two or more distinctly different levels (e.g., -500V and -1,000V), but it should be noted that this is merely an example and not required. Alternatively, the characterized waveform may be the output waveform generated by the modulation source, which in Figure 12 is the output waveform 1201 of the bias sources 408, 508, and 608. In yet another implementation, the characteristics of the waveform with a repetition period T include characteristics of plasma properties such as plasma density, sheath capacitance, and sheath potential.

[0056] Referring again to Figure 11, the waveform dataset 1205 is transmitted by the waveform communication module 1056 to at least one device connected to the plasma system (block 1104), and the synchronization module 1058 transmits a synchronization signal 1204 with a synchronization signal repetition period (an integer multiple of T) to at least one device connected to the plasma system (block 1106). This method enables synchronization of multiple devices connected to a plasma processing system, and the characterized waveform contains at least one of information about the modulation of the plasma or information about a desired waveform for the device connected to the plasma processing system. It should be recognized that the waveform dataset can be communicated to a receiving device to control the receiving device (for example, by instructing the receiving device to provide a desired waveform). Alternatively, the waveform dataset may contain information (for example, to provide information about the modulation of the plasma or to provide information about the output of a modulation source).

[0057] Figure 12 depicts a specific embodiment of a modulation source that applies power with a waveform that enables control over the ion energy in a region adjacent to electrode 104. However, the waveform characterization (block 1106) is generally applicable to other waveforms that may represent aspects of plasma-related modulation (e.g., plasma density, plasma impedance, ion flux, etc.) or aspects of power applied by other equipment. For example, equipment coupled to a plasma processing system may include RF and DC generators, and in some implementations, the generators are capable of absorbing power from the plasma processing system. In some embodiments, one or more generators are considered to be loads capable of absorbing power only from the plasma processing system. Generators capable of absorbing power are useful, for example, for controlling the spatial properties of the electromagnetic field in a plasma chamber by avoiding standing waves in the chamber.

[0058] One or more of the source generators 112 may synchronize the properties of their output with a characterized waveform (having a repetition period T). The properties of the output of the source generator 112 may be at least one of voltage, current, power, frequency, or generator source impedance. The output of the source generator 112 may also include pulsed power followed by continuous wave power (within one repetition period), for example. The waveform dataset may also include time-series values ​​showing one or more aspects of the power over the repetition period (e.g., voltage, current, phase, etc.). The source generator 112 may synchronize its pulsation with a specific waveform applied by bias sources 408, 508, 608 that can modulate the magnitude of a negative voltage swing (third portion 764) in a different way while the source generator 112 is pulsing compared to when the source generator 112 is operating in continuous wave mode. This use case is merely an example, and various other types of processing steps may facilitate synchronization between multiple plasma processing devices.

[0059] In addition, the source generator 112 may accelerate or delay the change in the properties of the output of the source generator 112 with respect to changes in the characterized waveform with a repetition period T. As discussed above, the characterized waveform in some implementations may characterize the modulation of the plasma properties. The characterized waveform may also characterize the waveform of the source generator 112 or another modulation source (depending on how the source generator 112 is configured to operate).

[0060] The equipment coupled to (and synchronized as disclosed herein) with the plasma processing system is, of course, not limited to the modulation source. For example, at least one piece of equipment to which a dataset is transmitted (block 1104) may include equipment configured to measure the properties of the plasma processing system. For example, the measurement may include at least one of the following: the measurement of plasma properties, the properties of the power delivered to the plasma system, or the properties of the gas delivered to the plasma system. In a further embodiment, the equipment configured to measure properties may include one or more of the source measurement and diagnostic system 114 and the bias measurement and diagnostic system 111. Those skilled in the art will recognize that the source measurement and diagnostic system 114 and the bias measurement and diagnostic system 111 may include one or more sensors (e.g., a directional coupler and / or VI sensors) in conjunction with the hardware to sample and analyze the properties of the power delivered to the plasma system (which may be used to measure plasma impedance as a plasma property). In the context of a plasma processing system utilizing a remote plasma source 205, the properties of the gas delivered to the plasma processing system may be measured (e.g., using optical or other measurement techniques). As discussed herein, plasma modulation can cause aliasing of plasma property measurements; therefore, it is beneficial to synchronize the measurements within a time window (or between time windows where the modulation is at a minimum) to avoid misleading transients.

[0061] Other devices that can be synchronized include matching networks. For example, an impedance matching network can synchronize impedance measurements with a characterized waveform. Matching can be improved by synchronizing the measurements with a time window in which the measurements are not misleading (e.g., when there are no large changes in the power level applied to the plasma). Embodiments of impedance matching networks include a source matching network 113 and a bias matching network 110.

[0062] The waveform dataset 1205 may be transmitted via a digital communication link to one or more of several devices coupled to the plasma processing system (block 1104). The communication link may include a system control bus 117, which can be implemented by a known digital link (e.g., Ethernet®, but not limited to). In many implementations, the waveform dataset 1205 may be communicated once, and then a synchronization pulse prompts each device to operate in a repeating manner in response to the waveform dataset.

[0063] The synchronization signal may be transmitted via a quasi-real-time communication link 119 to equipment coupled to the plasma processing system (block 1106). In an embodiment, the quasi-real-time link may be an analog communication link for providing identifiable basic pulses (also referred to as "ticks") to a single analog output, and refresh pulses (also referred to as "refresh ticks") may be transmitted between the basic pulses if required. In addition, the synchronization signal may include at least one indication of the start of the synchronization signal repetition cycle and that a certain time period has elapsed since the start of the synchronization signal repetition cycle.

[0064] The start of the synchronization signal repetition cycle may be indicated by a pulse of a first duration, and the indication that a certain time period has elapsed since the start of the synchronization signal repetition cycle may be indicated by a pulse of a second duration different from the first duration. For example, the first duration may be longer than the second duration, and vice versa.

[0065] In some implementations, the synchronization signal includes an indication of the start of the synchronization signal repetition cycle, and the start of the synchronization signal repetition cycle is further modified at least once to indicate the time or to indicate that a new waveform is valid.

[0066] Referring to Figures 13 and 14, what is shown are flowcharts depicting the activities performed in the master device and the activities performed in the slave device, respectively. As shown in Figure 13, in the master device, information regarding the desired waveform for the device connected to the plasma processing device is acquired (block 1300), and the basic repetition period is determined (block 1302). A decision is also made to establish whether any intermediate synchronization pulses are necessary to maintain accuracy (block 1304). A waveform data set is generated (block 1306) and then communicated to the device connected to the plasma processing system (block 1308). In addition, a synchronization pulse is provided to the device connected to the plasma processing system (block 1310). As shown, an intermediate synchronization pulse is provided to the device as needed (block 1312). Information on whether the sequence should change is also acquired (block 1314), and if the sequence should change (block 1316), the activities described above with reference to blocks 1300-1314 are performed again.

[0067] As shown in Figure 14, in the slave device, a waveform dataset is received (block 1400), and the slave then waits until a sequence start pulse is received (block 1402), and then sets the time to zero (block 1404). The slave device then waits until a pulse is received (block 1406), determines whether the pulse was a sequence start pulse (block 1408), and if so, sets the time to zero (block 1410). If the received pulse is not a sequence start pulse (block 1408), the time is synchronized to the timing of the received pulse (block 1412). As shown, if a new waveform dataset is received (block 1414), the new waveform dataset received flag is set (block 1416). If the new waveform dataset received flag is set (block 1418) and the received pulse is modified to indicate a change to a new dataset (block 1420), the new waveform dataset received flag is cleared and the new waveform dataset is used (block 1422).

[0068] By using precision oscillators, synchronization can be maintained with good accuracy. For example, by using 50 ppm oscillators in all instruments, waveform changes can be predicted with better accuracy than 50 nanoseconds for fundamental pulse repetition rates as low as 10 kHz. For longer pulse repetition periods, additional synchronization pulses can be added every 100 microseconds to maintain synchronization within 50 nanosecond accuracy.

[0069] Synchronization between the source generator 112 and the bias sources 408, 508, and 608 may involve reducing or cutting off the voltage at the end of a given bias source pulse. For example, it may be desirable to avoid terminating the RF pulse in the middle of a bias source pulse. Alternatively, the pulsing or periodic reduction of the voltage may start and end at the same point / phase in the bias source pulse, apart from different pulses. In other words, it may be desirable to set pulses of equal length to an integer number of bias source pulses, regardless of whether the envelope pulse is in phase with the start or end of individual bias source pulses.

[0070] The embodiments described above, among other use cases, provide novel and non-trivial systems and methods for producing laminated films. Examples such as diamond-like carbon, which, when deposited using plasma treatment, have very high stresses that can lead to film delamination, can here be treated to incorporate low-stress graphite or amorphous carbon layers such that the entire film still exhibits diamond-like carbon properties even at lower stresses. For some films, it may be desirable to deposit the film in one period, followed by a period in which the plasma chemistry is modified by pulsed control and a high bias is applied to increase the density of the film. Aspects described herein enable the production of nanoscale “Bragg” structures consisting of alternative layers with different optical properties resulting from the combination of pulsed and bias voltage control in each individual period, as illustrated above. In other words, a first chemistry can be achieved over a first time period for depositing a first layer, and then a second chemistry can be achieved over a second time period for depositing a second layer. This can be repeated multiple times to achieve a “Bragg” structure. Different chemistry can be achieved by variations in bias voltage, duty cycle of two or more bias voltages, timing of bias voltages, source pulsing, duty cycle of source pulsing, source voltage, and one or more of the source voltage and pulsing in combination.

[0071] The methods described in connection with the embodiments disclosed herein may be directly embodied in hardware, in processor-executable code encoded in a non-transient tangible processor-readable storage medium, or in a combination of the two. Referring to, for example, Figure 15, is shown, a block diagram depicting physical components that may be used to realize synchronous logic, which may be implemented in equipment coupled to a plasma processing system disclosed herein. As shown, in this embodiment, the display portion 1512 and the non-volatile memory 1520 are coupled to a bus 1522, which is also coupled to a random access memory ("RAM") 1524, a processing portion (including N processing components) 1526, an optional field-programmable gate array (FPGA) 1527, and a transceiver component 1528 including N transceivers. The components depicted in Figure 15 represent physical components, but Figure 15 is not intended to be a detailed hardware diagram, and therefore many of the components depicted in Figure 15 may be realized by common structures or distributed among additional physical components. Furthermore, other existing and undeveloped physical components and architectures may also be considered for use in implementing the functional components described with reference to Figure 15.

[0072] The display portion 1512 generally operates to provide a user interface for the user, and in some implementations, the display is implemented by a touchscreen display. Generally, the non-volatile memory 720 is non-transient memory that functions to store (e.g., persistently store) data and processor executable code (including executable code associated with bringing about the methods described herein). For example, in some embodiments, the non-volatile memory 1520 includes boot loader code, operating system code, file system code, and non-transient processor executable code to facilitate the execution of the methods described herein (e.g., the methods described with reference to Figures 11, 13, and 14).

[0073] In many implementations, non-volatile memory 1520 is implemented by flash memory (e.g., NAND or one-NAND memory), but other memory types may also be considered. While it may be possible to execute code from non-volatile memory 1520, executable code in non-volatile memory is typically loaded into RAM 1524 and executed by one or more of the N processing components in processing section 1526.

[0074] The N processing components associated with RAM 1524 generally operate to execute instructions stored in non-volatile memory 1520, enabling synchronization between equipment coupled to the plasma processing system. For example, non-transient processor-executable code for providing a method to synchronously pulse and change the voltages of source generators and bias sources may be persistently stored in non-volatile memory 1520 and executed by the N processing components in association with RAM 1524. As those skilled in the art will understand, the processing section 726 may include a video processor, a digital signal processor (DSP), a microcontroller, a graphics processing unit (GPU), or other hardware processing components or a combination of hardware and software processing components (e.g., an FPGA or an FPGA including a digital logic processing section).

[0075] In addition, or alternatively, the processing unit 1526 may be configured to bring about one or more aspects of the methodologies described herein (e.g., a method for synchronously operating the equipment of a plasma processing apparatus). For example, non-transient processor-readable instructions may be stored in non-volatile memory 1520 or RAM 1524 and, when executed on the processing unit 1526, cause the processing unit 1526 to implement a method for synchronously operating a modulation source and other equipment. Alternatively, non-transient FPGA configuration instructions may be persistently stored in non-volatile memory 1520 and accessed by the processing unit 1526 (e.g., during startup) to configure the hardware-configurable portion of the processing unit 1526 to bring about the functions disclosed herein (including the functions of the synchronization controller 1016).

[0076] The input component 1530 operates to receive signals (e.g., synchronization signals or datasets accompanied by waveform characterization data) that represent one or more aspects of synchronized control between the instruments of the plasma processing system. Signals received by the input component may include, for example, power control and data signals, or control signals from a user interface. The output components generally operate to provide one or more analog or digital signals that represent the synchronized operational aspects between the instruments. For example, output section 1532 may output synchronization signals and / or waveform datasets.

[0077] The transceiver component 1528 described includes N transceiver chains that can be used to communicate with external devices via a wireless or wired network. Each of the N transceiver chains may represent a transceiver associated with a specific communication scheme (e.g., WiFi, Ethernet®, Profibus, etc.).

[0078] As will be understood by those skilled in the art, aspects of the present invention may be embodied as systems, methods, or computer program products. Thus, aspects of the present invention may take the form of entirely hardware embodiments, entirely software embodiments (including firmware, resident software, microcode, etc.), or embodiments that combine software and hardware aspects, which may generally be referred to herein as “circuits,” “modules,” or “systems.” Furthermore, aspects of the present invention may take the form of computer program products embodied in one or more computer-readable media having computer-readable program code embodied thereon.

[0079] As used herein, the enumeration of “at least one of A, B, or C” is intended to mean “any of A, B, or C, or any combination of A, B, and C.” The foregoing description of the disclosed embodiments is provided to enable those skilled in the art to construct or use the disclosure. Various modifications of these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the embodiments shown herein, but rather to be given the broadest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for operating a bias supply source for a plasma processing system, wherein the method is: Receiving the first synchronization signal, In response to the first synchronization signal, a first sequence of waveforms is generated, Receiving a second synchronization signal, In response to the second synchronization signal, a second sequence of waveforms is generated, wherein the second sequence of waveforms is different from the first sequence of waveforms. A method comprising the bias source applying the first and second sequences of waveforms to the electrodes of the plasma processing system, wherein the second synchronization signal is modified relative to the first synchronization signal to indicate that a new waveform is valid instead of the first sequence of waveforms.

2. The method according to claim 1, wherein each of the waveforms in the first sequence and the second sequence comprises a first portion that changes toward a positive voltage, a second portion having a peak voltage, a third portion having a negative voltage swing, and a fourth portion having a negative voltage ramp.

3. The method according to claim 2, wherein the first sequence comprises a waveform having a first negative voltage swing and a waveform having a second negative voltage swing.

4. The method according to claim 3, comprising receiving a waveform dataset defining the first negative voltage swing and the second negative voltage swing.

5. The method according to claim 3, wherein the second sequence comprises a waveform having a third negative voltage swing and a waveform having a fourth negative voltage swing.

6. This includes transmitting the first and second synchronization signals from the source generator, Receiving the first and second synchronization signals includes receiving the first and second synchronization signals at a bias source, the bias source generates the first and second sequences of waveforms, The method according to claim 4, wherein receiving the waveform dataset defining the first negative voltage swing and the second negative voltage swing includes receiving the waveform dataset at the bias source.

7. The method according to claim 6, wherein transmitting the first and second synchronization signals from the source generator includes transmitting the first and second synchronization signals in response to a change in the power output of the source generator.

8. This includes transmitting the first and second synchronization signals from the system controller, The method according to claim 3, wherein receiving the first and second synchronization signals includes receiving the first and second synchronization signals at a bias source, the bias source generates the first and second sequences of waveforms.

9. A non-transient medium for storing instructions, wherein the instructions are executable by a processor and / or provide configuration data for a field-programmable gate array, and the instructions are for operating a bias supply source for a plasma processing system, and the instructions are, Receiving the first synchronization signal, In response to the first synchronization signal, a first sequence of waveforms is generated, Receiving a second synchronization signal, In response to the second synchronization signal, a second sequence of waveforms is generated, wherein the second sequence of waveforms is different from the first sequence of waveforms. A non-transient medium for storing instructions, the bias source applying the first and second sequences of waveforms to the electrodes of the plasma processing system, the second synchronization signal being modified relative to the first synchronization signal to indicate that a new waveform is valid instead of the first sequence of waveforms.

10. A non-transient medium for storing an instruction according to claim 9, wherein each of the waveforms in the first sequence and the second sequence comprises a first portion that changes toward a positive voltage, a second portion having a peak voltage, a third portion having a negative voltage swing, and a fourth portion having a negative voltage ramp.

11. The non-transient medium for storing an instruction according to claim 10, wherein the first sequence comprises a waveform having a first negative voltage swing and a waveform having a second negative voltage swing.

12. A non-transient medium for storing the instruction according to claim 11, comprising receiving a waveform dataset defining the first negative voltage swing and the second negative voltage swing.

13. The non-transient medium for storing the instruction according to claim 11, wherein the second sequence comprises a waveform having a third negative voltage swing and a waveform having a fourth negative voltage swing.

14. A non-transient medium for storing instructions according to claim 12, wherein receiving the waveform dataset defining the first negative voltage swing and the second negative voltage swing includes receiving the waveform dataset at a bias source.

15. A bias supply source for a plasma processing system, A circuit configured to generate a waveform and apply the waveform to an electrode of a plasma processing system, wherein each waveform comprises a first portion that changes toward a peak voltage, a second portion having the peak voltage, a third portion having a negative voltage swing, and a fourth portion having a negative voltage ramp, It is synchronous logic, The circuit is controlled to receive a first synchronization signal and to generate a first sequence of waveforms in response to the first synchronization signal. The circuit is controlled to receive a second synchronization signal and to generate a second sequence of waveforms in response to the second synchronization signal. Synchronization logic and A bias source comprising, wherein the second synchronization signal is modified relative to the first synchronization signal to indicate that a new waveform is valid instead of the first sequence of waveforms.

16. The bias source according to claim 15, wherein the first sequence comprises a waveform having a first negative voltage swing and a waveform having a second negative voltage swing.

17. The bias source according to claim 16, wherein the synchronization logic is configured to receive waveform datasets defining the first negative voltage swing and the second negative voltage swing.

18. The aforementioned circuit is The first node and, At least one switch connecting a second node to a first node via a first conductive path, wherein, in response to the closing of the at least one switch, the peak voltage generated at the first node before the negative voltage swing is generated. A bias supply source according to claim 17, comprising:

19. The aforementioned circuit is A power source coupled between the first node and the third node to provide voltage between the first node and the second node, A first switch that connects the second node to the first node, wherein the peak voltage is applied at the first node in response to the first switch being closed, A second switch that connects a third node to the first node, wherein the negative voltage swing is applied to the first node in response to the second switch being closed. A bias supply source according to claim 18, comprising:

20. The bias supply source according to claim 19, wherein the first switch and the second switch are configured such that both the first switch and the second switch are not closed at the same time.

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