Variable gain amplifier and transmitter

Abstract

The present disclosure provides a variable gain amplifier, including: a high-level generating module including a voltage signal input end, a first high-level signal output end and a second high-level signal output end, configured to convert a voltage signal inputted from the voltage signal input end into a first high-level signal and a second high-level signal; a switching signal converting module including a high-level signal input end, N digital signal input ends and N switching signal output ends, configured to output a gain control signal related to the signal outputted from the high-level signal input end via a corresponding switching signal output end under the control of a signal inputted from the digital signal input end; and an amplifying module including an amplifying means and an N-th stage gain control means, where N is a positive integer equal to or greater than 1. The present disclosure further provides a transmitting device.

Description

Technical Field

[0001] This application claims the priority of Chinese Patent Application No. 202111362245.5 filed on November 17, 2021, and the entire content of the Chinese patent application is incorporated herein by reference.

[0002] The present disclosure relates to the field of communication devices, but is not limited thereto, and particularly relates to a variable gain amplifier and a transmitting device including the variable gain amplifier. Background Art

[0003] A variable gain amplifier is an important component in systems such as transmission and reception systems. Common variable gain amplifiers include a variable gain amplifier with a digital current steering structure, a variable gain amplifier with an analog current steering structure, and a variable gain amplifier with a digital stepping attenuator structure.

[0004] Variable gain amplifiers with a digital current steering structure are the most widely used. However, since the gain step and maximum gain of a variable gain amplifier with a digital current steering structure are greatly affected by temperature and process angle, the error of the variable gain amplifier with a digital current steering structure also varies with changes in temperature and process angle. Summary of the Invention Means for Solving the Problem

[0005] Embodiments of the present disclosure provide a variable gain amplifier and a transmitting device including the variable gain amplifier. According to one aspect of the present disclosure, a voltage signal input terminal, a high level generation module including a first high level signal output terminal and a second high level signal output terminal, configured to convert a voltage signal input from the voltage signal input terminal into a first high level signal and a second high level signal, wherein both the first high level signal and the second high level signal are positively correlated with the temperature of the variable gain amplifier, and the potential of the first high level signal is higher than that of the second high level signal; The high-level signal input terminal includes N digital signal input terminals and N switching signal output terminals, wherein the high-level signal input terminal is electrically connected to the first high-level signal output terminal. The aforementioned N switching signal output terminals The aforementioned N pieces digital A switching signal conversion module is configured to correspond one-to-one with a signal input terminal and, under the control of a signal input from a digital signal input terminal, to output a gain control signal related to the first high-level signal output from the first high-level signal output terminal via a corresponding switching signal output terminal, Amplification means and N stages of Includes gain control means, N stages of The gain control means corresponds one-to-one with the N switching signal output terminals of the switching signal conversion module, N stages Gain control means Each gain control means The control terminal is electrically connected to the corresponding switching signal output terminal, each The input terminal of the gain control means is electrically connected to the voltage signal input terminal, each The output terminal of the gain control means is electrically connected to the intermediate node of the amplification means, each The gain control means can supply a voltage signal positively correlated with temperature to the intermediate node under the control of the signal received at the control terminal of the gain control means, and the input terminal of the amplification means is electrically connected to the second high-level signal output terminal, and the amplification means control The edge , an amplification module electrically connected to the first high-level signal output terminal, where N is a positive integer of 1 or more, A variable gain amplifier is provided that includes [a specific component].

[0006] Two aspects of this disclosure are: The system includes sequentially connected intermediate frequency variable gain amplifiers, mixers, radio frequency variable gain amplifiers, and power amplifiers, wherein at least one of the intermediate frequency variable gain amplifiers and radio frequency variable gain amplifiers is a variable gain amplifier provided by the Disclosure. To provide a transmitting device. When the input signal is amplified using the variable gain amplifier, the input signal is received via the input terminal of the amplification means, and the power supply voltage is supplied to the high-level generation module and the gain control means via the voltage signal input terminal. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic diagram of one embodiment of a variable gain amplifier provided in this disclosure. [Figure 2] Figure 2 is a schematic diagram of another embodiment of the variable gain amplifier provided in this disclosure. [Figure 3] Figure 3 shows the gain curves of a variable gain amplifier when N (the number of digital signal input terminals or switching signal output terminals) is 4, and the variable gain amplifier is at -25°C, 25°C, and 125°C. [Figure 4] Figure 4 shows the gain curves for a variable gain amplifier at TT, FF, and SS process angles when N is 4. [Figure 5] Figure 5 is a schematic diagram of one embodiment of the transmitting device provided in this disclosure. [Modes for carrying out the invention]

[0008] To enable those skilled in the art to better understand the technical proposals of this disclosure, the variable gain amplifier and transmitting device provided by this disclosure will be described in detail below, accompanied by drawings.

[0009] The following sections will provide a more detailed description of exemplary embodiments with reference to the drawings, but these exemplary embodiments can be embodied in different forms and should not be construed as being limited to the embodiments described herein. Rather, the purpose of providing these embodiments is to make the disclosure more detailed and complete and to allow those skilled in the art to fully understand the scope of the disclosure.

[0010] Unless contradictory, each embodiment and each feature in the embodiments of this disclosure can be combined with each other in any way.

[0011] As used in this text, the term "and / or" includes all combinations of one or more related enumeration items.

[0012] The terminology used herein is intended solely to describe specific embodiments and is not intended to limit the disclosure. Unless otherwise explicitly indicated in the surrounding text, the singular forms “one” and “the” used herein are intended to include the plural form. Furthermore, where the terms “including” and / or “consisting of” are used herein, it indicates that such features, wholes, members and / or components exist, but does not exclude the existence or addition of one or more other features, wholes, members, components and / or groups thereof.

[0013] Unless otherwise specified, all terms used herein (including technical and scientific terms) have the same meaning as those commonly understood by those skilled in the art. For example, terms that are limited in common dictionaries should be interpreted as having the meaning consistent with their meaning in the context of the relevant art and this disclosure, and should not be interpreted as having an idealized or overly formal meaning unless explicitly limited otherwise.

[0014] One aspect of this disclosure is a variable gain amplifier. As shown in Figure 1, the variable gain amplifier includes a voltage signal input terminal ELVDD, a high-level generation module 110, a switching signal conversion module 120, and an amplification module 130.

[0015] The high-level generation module 110 includes a first high-level signal output terminal and a second high-level signal output terminal, and is configured to convert a voltage signal input via the voltage signal input terminal ELVDD into a first high-level signal VGH1 and a second high-level signal VGH2, both of which are positively correlated with the temperature of the variable-gain amplifier, and the potential of the first high-level signal is higher than the potential of the second high-level signal.

[0016] The switching signal conversion module 120 comprises a high-level signal input terminal, N digital signal input terminals (which are D1 to DN respectively), and N switching signal output terminals. Said high-level signal input terminal is electrically connected to said first high-level signal output terminal, and the N switching signal output terminals are connected to N digital signal input terminals in one-to-one correspondence. Said switching signal conversion module is configured to, under the control of a signal input from a digital signal input terminal, output a gain control signal related to said first high-level signal VGH1 output from said first high-level signal output terminal via a corresponding switching signal output terminal. In the present disclosure, N is a positive integer of 1 or greater.

[0017] The amplification module 130 comprises an amplification means 131 and N-stage of gain control means (which are gain control means 1321 to gain control means 132N respectively), and the N-stage of gain control means respectively correspond one-to-one to the N switching signal output terminals of said switching signal conversion module. The control terminal of said gain control means is electrically connected to the corresponding switching signal output terminal, the input terminal of said gain control means is electrically connected to said voltage signal input terminal, and the output terminal of said gain control means is electrically connected to an intermediate node of said amplification means. Said gain control means supplies a voltage signal having a positive correlation with temperature to said intermediate node under the control of a signal received by the control terminal of the gain control means. The input terminal of said amplification means is electrically connected to said second high-level signal output terminal, and the control terminal of said amplification means is electrically connected to said first high-level signal output terminal.

[0018] When the variable gain amplifier is used to amplify an input signal, it is necessary to receive the input signal RFin via the input terminal of the amplification means 131, and supply a power supply voltage to the high-level generation module and the gain control means via the voltage signal input terminal.

[0019] As the operating time increases, the temperature of the variable gain amplifier rises due to heat generation, the first high-level signal output by the high-level generation module 110 is positively correlated with the temperature of the variable gain amplifier, and the signal received by the control terminal of the amplification means 131 of the amplification module 130 is also positively correlated with the temperature.

[0020] The first high-level signal output by the high-level generation module 110 has two functions: a first function in which the switching signal conversion module outputs a control signal related to the first high-level signal (i.e., associating the control signal of the gain control means with temperature), and a second function in which the control signal related to the first high-level signal is received by the control terminal of the amplification means (i.e., associating the control signal of the amplification means with temperature).

[0021] The control signals of the gain control means 132 and the control signals of the amplification means 131 are all temperature-dependent, so that the temperature-dependent changes in the output of the gain control means 132 coincide with the temperature-dependent changes in the output of the amplification means 131. This allows the gain stepping of the variable gain amplifier provided in this disclosure to maintain consistency under different temperature and different process angle conditions, reducing the influence of temperature and process angle on the gain error and voltage gain at the maximum gain state of the variable gain amplifier, and providing high robustness.

[0022] This disclosure does not particularly limit the specific configuration of the switching signal conversion module 120, and it is sufficient that the first high-level signal can be converted into a control signal of the gain control means under the control of a digital signal.

[0023] In an optional embodiment, the switching signal conversion module 120 includes N switching signal conversion means (for example, switching signal conversion means 121 to 12N, respectively), where the N switching signal conversion means correspond one-to-one to N digital signal input terminals, and the N switching signal conversion means correspond one-to-one to N switching signal output terminals.

[0024] The control terminal of the switching signal conversion means is electrically connected to the corresponding digital signal input terminal (in the specific embodiment shown in Figure 2, the digital signal input terminal D1 is electrically connected to the control terminal of the switching signal conversion means 121, and the digital signal input terminal DN is electrically connected to the control terminal of the switching signal conversion means 12N), the input terminal of the switching signal conversion means is electrically connected to the first high-level signal terminal, and the output terminal of the switching signal conversion means is electrically connected to the corresponding switching signal output terminal.

[0025] When the switching signal conversion means receives a valid digital signal at its control terminal, it can turn on the input terminal and output terminal of the switching signal conversion means. When the input terminal and output terminal of the switching signal conversion means are turned on, the first high-level signal can be output to the control terminal of the corresponding gain control means.

[0026] The digital signal may be 0 or 1. The digital signal effective for the switching signal conversion means may be 0 or 1, and this is determined by the specific structure of the switching signal conversion means.

[0027] In the embodiment shown in Figure 2, the switching signal conversion means includes a first switching signal conversion transistor (first switching transistor) and a second switching signal conversion transistor (second switching transistor), wherein the gate of the first switching signal conversion transistor is electrically connected to the gate of the second switching signal conversion transistor, and both are electrically connected to the corresponding digital signal input terminals, and the first pole (source) of the first switching signal conversion transistor is RecordThe first switching signal conversion transistor is electrically connected to the level signal input terminal, the second pole (drain) of the first switching signal conversion transistor is electrically connected to the first pole (drain) of the second switching signal conversion transistor, and the second pole (source) of the second switching signal conversion transistor is electrically connected to the low level signal reference terminal. One of the first switching signal conversion transistor and the second switching signal conversion transistor is a P-type transistor, and the other of the first switching signal conversion transistor and the second switching signal conversion transistor is an N-type transistor.

[0028] Specifically, if the first switching signal conversion transistor is a P-type transistor and the second switching signal conversion transistor is an N-type transistor, the effective digital signal for the switching signal conversion means is 0. If the first switching signal conversion transistor is an N-type transistor and the second switching signal conversion transistor is a P-type transistor, the effective digital signal for the switching signal conversion means is 1.

[0029] In the embodiment shown in Figure 2, the first switching signal conversion transistor is a P-type transistor, and the second switching signal conversion transistor is an N-type transistor.

[0030] The switching signal conversion means 121 includes a first switching transistor T11 and a second switching transistor T12. The switching signal conversion means 12N includes a first switching transistor TN1 and a second switching transistor TN2.

[0031] As shown in Figure 2, the first pole (source) of the first switching transistor T11 is electrically connected to the first high-level signal output terminal, and the first pole (source) of the first switching transistor TN1 is also electrically connected to the first high-level signal output terminal. The second pole (source) of the second switching transistor T12 is electrically connected to the low-level signal reference terminal, and the second pole (source) of the second switching transistor TN2 is also electrically connected to the low-level signal reference terminal.

[0032] When the control terminal of the switching signal conversion means 121 receives the digital signal 0, the first pole (source) and second pole (drain) of the first switching transistor T11 turn on, and the first pole (drain) and second pole (source) of the second switching transistor T12 turn off, thereby converting the first high-level signal output The terminal signal can be output to the control terminal of the gain control means corresponding to the switching signal conversion means 121.

[0033] When the control terminal of the switching signal conversion means 12N receives the digital signal 0, the first and second poles of the first switching transistor TN1 turn on, and the first and second poles of the second switching transistor TN2 turn off, thereby converting the first high-level signal output The terminal signal can be output to the control terminal of the gain control means corresponding to the switching signal conversion means 12N.

[0034] Each switching signal conversion means can convert a digital signal used to control the gain control means into a temperature-related control signal.

[0035] This disclosure does not particularly limit the specific configuration of the high-level generation module 110, as long as it can generate a first high-level signal positively related to temperature and a second high-level signal positively related to temperature. In the embodiment shown in Figure 2, the high-level generation module includes a current source 111 and a current conversion means 112.

[0036] The input terminal of the current source 111 is formed as the voltage signal input terminal, and the current source 111 can convert the voltage signal input from the voltage signal input terminal into a current Iptat, and the current is positively correlated with the temperature of the variable gain amplifier.

[0037] The input terminal of the current conversion means 112 is electrically connected to the output terminal of the current source 111, the first output terminal of the current conversion means 112 is formed as the first high-level signal output terminal, and the second output terminal of the current conversion means 112 is formed as the second high-level signal output terminal. The current conversion means is configured to convert the current into the first high-level signal and the second high-level signal, respectively, to output the first high-level signal via the first output terminal, and to output the second high-level signal via the second output terminal.

[0038] This disclosure does not particularly limit the specific structure of the current conversion means 112. For example, the current conversion means 112 includes a first current conversion transistor T1 and a second current conversion transistor T2.

[0039] In the embodiment shown in Figure 2, the gate of the first current conversion transistor T1 is electrically connected to the first pole of the first current conversion transistor T1 and is formed as the input terminal of the current conversion means 112, and the first output terminal is electrically connected to the first pole of the first current conversion transistor T1. The gate of the second current conversion transistor T2 is electrically connected to the first pole of the second current conversion transistor T2 and both are electrically connected to the second pole of the first current conversion transistor T1, the second output terminal is electrically connected to the first pole of the second current conversion transistor T2 and the second pole of the second current conversion transistor T2 is electrically connected to the low-level signal reference terminal.

[0040] When a voltage signal is input to the voltage signal input terminal, the current source 111 converts the voltage signal into a first high-level signal and inputs it to the first pole and gate of the first current conversion transistor T1. The gate of the first current conversion transistor T1 receives the first high-level signal, the first and second poles of the first current conversion transistor T1 turn on, the second pole of the first current conversion transistor T1 is converted into another high-level signal, and the gate of the second current conversion transistor T2 receives the above high-level signal and turns on the second current conversion transistor T2The first and second poles of the transistor are turned on. Due to the voltage division action of the first current conversion transistor T1 and the second current conversion transistor T2, the voltage at the node between the second pole of the first current transistor T1 and the first pole of the second current transistor T2 (i.e., the second output terminal) becomes the second high-level signal, and the potential of this second high-level signal is lower than the potential of the first high-level signal.

[0041] When the second high-level signal is supplied to the input terminal of the amplification means 131, the input signal of the amplification means 131 also becomes correlated with the temperature of the variable-gain amplifier.

[0042] In some embodiments, both the first current conversion transistor T1 and the second current conversion transistor T2 are N-type transistors. The first pole of the first current conversion transistor T1 and the second current conversion transistor T2 is the drain, and the second pole is the source.

[0043] This disclosure does not specify any particular structure of the gain control means. In this disclosure, the main role of the gain control means is to introduce an external power supply voltage to the intermediate node of the amplification means 131 under the control of a control signal. In any embodiment, the gain control means may include a gain transistor, the gate of which is formed as the control terminal of the gain control means, the first pole (drain) of which is electrically connected to the voltage signal input terminal ELVDD, and the second pole (source) of which is formed as the output terminal of the gain control means.

[0044] Since the gate voltage of a gain transistor is related to temperature, and the second electrode (source) voltage of a gain transistor is also related to temperature, the transconductance of a gain transistor changes with temperature.

[0045] In the amplification means 131, the signals input from the input terminal are the input voltage RFin and a second high-level signal related to temperature. Therefore, the input voltage of the amplification means 131 is related to temperature, and the voltage at the intermediate node of the amplification means 131 is also related to temperature. As described above, the signal received by the control terminal of the amplification means 131 is the first high-level signal. Each node signal of the amplification means 131 is related to temperature, which allows the gain stepping of the amplification means 131 to maintain consistency under different temperature and process angle conditions.

[0046] In the embodiment shown in Figure 2, the gain control means 1321 includes a gain transistor T1321, and the gain control Means 132N include a gain transistor T132N.

[0047] In the embodiment shown in Figure 2, all gain transistors are N-type transistors.

[0048] This disclosure does not particularly limit the specific structure of the amplification means 131, but optionally, the amplification means 131 includes a first amplification transistor T3 and a second amplification transistor T4, the gate of the first amplification transistor T3 is formed as the control terminal of the amplification means 131, the first pole (drain) of the first amplification transistor T3 is electrically connected to the output terminal of the amplification means 131, and the second electrode (source) of the first amplification transistor T3 is electrically connected to an intermediate node.

[0049] The gate of the second amplification transistor T4 is formed as the input terminal of the amplification means 131, and the first pole (drain) of the second amplification transistor T4 is 1 Amplifying transistor T3 The second pole (source) of the second amplifier transistor T4 is electrically connected to the low-level signal reference terminal.

[0050] When the gate of the second amplification transistor T4 receives the input signal RFin and the second high-level signal, it operates in the amplification region and outputs a signal to the intermediate node. The gate voltage of the first amplification transistor T3 is the first high-level signal, and the source voltage of the first amplification transistor T3 includes the superposition of the signal output by the gain control means of each stage and the signal output by the first pole of the second amplification transistor T3, so the second amplification transistor T4 can output the amplified signal.

[0051] In the embodiment shown in Figure 2, both the first amplification transistor T3 and the second amplification transistor are N-type transistors.

[0052] In this disclosure, the amplification means 131 is required to receive a voltage signal input from an external power supply. Optionally, the first pole (drain) of the first amplification transistor T3 may be electrically connected directly to the voltage signal input terminal. In the embodiment shown in Figure 2, the amplification means 131 further includes a resistor R, one end of which is electrically connected to the voltage signal input terminal, and the other end of which is electrically connected to the first pole of the first amplification transistor T3.

[0053] In the following section, the specific structure and operating principle of one embodiment of the variable gain amplifier provided by this disclosure will be described in conjunction with Figure 2. In this embodiment, the low-level signal reference terminal is the ground terminal GND.

[0054] In the embodiment shown in Figure 2, the high-level generation module 110 includes a current source 111 and a current conversion means 112, the current conversion means 112 includes a first current conversion transistor T1 and a second current conversion transistor T2, both of which are N-type transistors. The gate of the first current conversion transistor T1 is electrically connected to the first pole of the first current conversion transistor T1, the second pole of the first current conversion transistor T1 is electrically connected to the first pole of the second current conversion transistor T2, and the second pole of the second current conversion transistor T2 is electrically connected to the ground terminal GND.

[0055] The switching signal conversion means 120 includes N switching signal conversion means, and Figure 2 shows switching signal conversion means 121 and switching signal conversion means 12N. Switching signal conversion means 121 includes a first switching transistor T11 and a second switching transistor T12. Switching signal conversion means 12N includes a first switching transistor TN1 and a second switching transistor TN2. The first pole (source) of the first switching transistor T11 is electrically connected to the first high-level signal output terminal, and the first pole (source) of the first switching transistor TN1 is also electrically connected to the first high-level signal output terminal. T12 The second pole of the first transistor is electrically connected to the low-level signal reference terminal, and the second pole of the second switching transistor TN2 is also electrically connected to the low-level signal reference terminal.

[0056] When the control terminal of the switching signal conversion means 121 receives the digital signal 0, the first and second poles of the first switching transistor T11 turn on, and the first and second poles of the second switching transistor T12 turn off, thereby converting the signal at the first high-level signal terminal to a switching signal Conversion means The output can be sent to the control terminal of the gain control means (1321) corresponding to 121.

[0057] When the control terminal of the switching signal conversion means 12N receives the digital signal 0, the first and second poles of the first switching transistor TN1 turn on, and the first and second poles of the second switching transistor TN2 turn off, thereby converting the signal at the first high-level signal terminal to a switching signal Conversion means The output can be sent to the control terminal of the gain control means (132N) corresponding to 12N.

[0058] In the embodiment shown in Figure 2, the gain control means 1321 includes a gain transistor T1321, and the gain controlMeans 132N includes a gain transistor T132N. The gate of the gain transistor T1321 is electrically connected to the second pole of the first switching transistor T11, and the gate of the gain transistor T132N is electrically connected to the second pole of the first switching transistor TN1.

[0059] The amplification means 131 includes a first amplification transistor T3 and a second amplification transistor T4. The gate of the first amplification transistor T3 is formed as a control terminal of the amplification means 131. The first pole of the first amplification transistor T3 is electrically connected to the output terminal of the amplification means 131, and the second pole of the first amplification transistor T3 is electrically connected to an intermediate node.

[0060] The gate of the second amplification transistor T4 is formed as the input terminal of the amplification means 131, and the first pole of the second amplification transistor T4 is 1 Amplifying transistor T3 The second pole of the second amplifier transistor T4 is electrically connected to the low-level signal reference terminal.

[0061] Since the gate-source voltage of each gain transistor matches the gate-source voltage of the first amplifier transistor T3, the change in the transconductance of each gain transistor with respect to temperature and process angle, and the first amplifier transistor T3 The changes in transconductance with temperature and process angle are consistent, thereby allowing the gain stepping of the variable gain amplifier to maintain consistency under different temperature and process angle conditions, thus giving the variable gain amplifier high robustness.

[0062] Figure 3 shows the gain stepping and gain curves (horizontal axis: sampling points, vertical axis: gain) of a variable gain amplifier when N is 4 at -25°C, 25°C, and 125°C. As can be seen, the gain stepping of the variable gain amplifier is consistent at different temperatures.

[0063] Figure 4 shows the gain stepping and gain curve (horizontal axis: sampling points, vertical axis: gain) of a variable gain amplifier when N is 4, under the process angles TT (typical nmos and typical pmos), FF (fast nmos and fast pmos), and SS (slow nmos and slow pmos). As can be seen from this, the gain stepping of the variable gain amplifier is consistent at different process angles.

[0064] The present disclosure provides a transmitting device in two embodiments. As shown in Figure 5, the transmitting device includes a sequentially connected intermediate frequency variable gain amplifier 210, a mixer 220, a radio frequency variable gain amplifier 230, and a power amplifier 240, wherein at least one of the intermediate frequency variable gain amplifier and the radio frequency variable gain amplifier is the variable gain amplifier provided by the present disclosure.

[0065] Because the variable gain amplifier has high robustness, the transmitting device also has excellent performance.

[0066] Optionally, the transmitting device may be a radio frequency front-end chip for a mobile phone, a front-end chip for a phased array radar receiver, a front-end chip or component for a K-Ka band base station receiver, a front-end chip or component for an automotive radar receiver, other radio frequency millimeter-wave front-end chips or components, or other related drive chips or components for radio frequency millimeter-wave broadband.

[0067] Those skilled in the art will understand that all or some of the functional modules / means in the systems and devices disclosed above can be implemented as software, firmware, hardware, and appropriate combinations thereof. In hardware embodiments, the distinction between the functional modules / means mentioned above does not necessarily correspond to a distinction of physical components; for example, one physical component may have multiple functions, or one function may be performed by several components working together. In addition, in embodiments including hardware, unless otherwise specifically stated or inappropriate, the functional modules / means described above may be implemented by circuits (e.g., integrated circuits) or circuit elements. In this context, a module or means that performs a certain function may be called a circuit that performs that function.

[0068] While this text discloses exemplary embodiments and employs specific terminology, these should be used and interpreted only in a general illustrative sense and not for a limiting purpose. It will be apparent to those skilled in the art that, in some examples, unless otherwise explicitly noted, features, characteristics, and / or elements described in combination with specific embodiments may be used alone or in combination with other embodiments. Accordingly, it will be understood that various forms and details can be modified without departing from the scope of this disclosure as set forth in the appended claims.

Claims

1. Voltage signal input terminal and A high-level generation module comprising a first high-level signal output terminal and a second high-level signal output terminal, which converts a voltage signal input from the voltage signal input terminal into a first high-level signal and a second high-level signal, the first high-level signal and the second high-level signal being output from the first high-level signal output terminal and the second high-level signal output terminal, respectively, and configured such that both the first high-level signal and the second high-level signal are positively correlated with the temperature of a variable-gain amplifier, and the potential of the first high-level signal is higher than the potential of the second high-level signal, A switching signal conversion module comprising a high-level signal input terminal, N digital signal input terminals, and N switching signal output terminals, wherein the high-level signal input terminal is electrically connected to the first high-level signal output terminal, the N switching signal output terminals correspond one-to-one with the N digital signal input terminals, and is configured to output gain control signals related to the first high-level signal output from the first high-level signal output terminal via the corresponding switching signal output terminals, under the control of signals input from the digital signal input terminals. The amplifier includes an amplification means and N stages of gain control means, the N stages of gain control means correspond one-to-one with the N switching signal output terminals of the switching signal conversion module, the control terminal of each of the N stages of gain control means is electrically connected to the corresponding switching signal output terminal, the input terminal of each of the gain control means is electrically connected to the voltage signal input terminal, the output terminal of each of the gain control means is electrically connected to an intermediate node of the amplification means, each of the gain control means can supply a voltage signal positively correlated to the temperature of the variable gain amplifier to the intermediate node under the control of the signal received by the control terminal of the gain control means, the input terminal of the amplification means is electrically connected to the second high-level signal output terminal, the control terminal of the amplification means is electrically connected to the first high-level signal output terminal, and the amplifier module is a positive integer of 1 or more. A variable gain amplifier including a variable gain amplifier.

2. The switching signal conversion module includes N switching signal conversion means, each of which corresponds one-to-one to N digital signal input terminals, and each of which corresponds one-to-one to N switching signal output terminals. Each of the N switching signal conversion means has a control terminal electrically connected to a corresponding digital signal input terminal, each of the switching signal conversion means has an input terminal electrically connected to a first high-level signal output terminal, and each of the switching signal conversion means has an output terminal electrically connected to a corresponding switching signal output terminal. When each of the switching signal conversion means receives a valid digital signal at its control terminal, it can electrically connect its input terminal and output terminal. A variable gain amplifier according to claim 1.

3. Each of the N switching signal conversion means includes a first switching signal conversion transistor and a second switching signal conversion transistor, the gate of the first switching signal conversion transistor is electrically connected to the gate of the second switching signal conversion transistor, both are electrically connected to the corresponding digital signal input terminals, the first pole of the first switching signal conversion transistor is electrically connected to the high-level signal input terminal, the second pole of the first switching signal conversion transistor is electrically connected to the first pole of the second switching signal conversion transistor, the second pole of the second switching signal conversion transistor is electrically connected to the low-level signal reference terminal, one of the first switching signal conversion transistor and the second switching signal conversion transistor is a P-type transistor, and the other of the first switching signal conversion transistor and the second switching signal conversion transistor is an N-type transistor. The variable gain amplifier according to claim 2.

4. The first switching signal conversion transistor is a P-type transistor, and the second switching signal conversion transistor is an N-type transistor. The variable gain amplifier according to claim 3.

5. The aforementioned high-level generation module is A current source having an input terminal formed as the voltage signal input terminal and an output terminal that outputs a current positively correlated with the temperature of the variable gain amplifier, The input terminal is electrically connected to the output terminal of the current source, the first output terminal is formed at the first high-level signal output terminal, and the second output terminal is formed at the second high-level signal output terminal, and the current conversion means is configured to convert the current into the first high-level signal and the second high-level signal, respectively, and outputs the first high-level signal via the first output terminal and the second high-level signal via the second output terminal. A variable gain amplifier as described in claim 1.

6. The current conversion means includes a first current conversion transistor and a second current conversion transistor. The gate of the first current conversion transistor is electrically connected to the first pole of the first current conversion transistor, and the gate is formed as the input terminal of the current conversion means, and the first output terminal is electrically connected to the first pole of the first current conversion transistor, The gate of the second current conversion transistor is electrically connected to the first pole of the second current conversion transistor, and both are electrically connected to the second pole of the first current conversion transistor; the second output terminal is electrically connected to the first pole of the second current conversion transistor; and the second pole of the second current conversion transistor is electrically connected to the low-level signal reference terminal. The variable gain amplifier according to claim 5.

7. Each of the N stages of gain control means includes a gain transistor, the gate of the gain transistor is formed as the control terminal of each gain control means, the first pole of the gain transistor is electrically connected to the voltage signal input terminal, and the second pole of the gain transistor is formed as the output terminal of each gain control means. A variable gain amplifier according to any one of claims 1 to 6.

8. The amplification means includes a first amplification transistor and a second amplification transistor, the gate of the first amplification transistor is formed as the control terminal of the amplification means, the first pole of the first amplification transistor is electrically connected to the output terminal of the amplification means, and the second pole of the first amplification transistor is electrically connected to an intermediate node. The gate of the second amplification transistor is formed as the input terminal of the amplification means, the first pole of the second amplification transistor is electrically connected to the second pole of the first amplification transistor, and the second pole of the second amplification transistor is electrically connected to the low-level signal reference terminal. A variable gain amplifier according to any one of claims 1 to 6.

9. The amplification means further includes a resistive element, one end of which is electrically connected to the voltage signal input terminal, and the other end of which is electrically connected to the first pole of the first amplification transistor. The variable gain amplifier according to claim 8.

10. The system includes sequentially connected intermediate frequency variable gain amplifiers, mixers, radio frequency variable gain amplifiers, and power amplifiers, wherein at least one of the intermediate frequency variable gain amplifiers and radio frequency variable gain amplifiers is a variable gain amplifier according to any one of claims 1 to 9. Transmitter.

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