Substrate processing equipment

Abstract

The present disclosure describes a substrate processing device that can etch a relatively hard film provided on the peripheral edge of a substrate at a relatively high etching rate without the use of plasma.　The substrate processing device comprises: a peripheral edge heating unit configured so as to heat the peripheral edge of a substrate; an irradiation unit that is arranged so as to be positioned above the upper surface of the substrate and irradiates the upper surface of the substrate with energy rays; and a supply unit configured so as to supply oxygen-containing gas or ozone gas to the peripheral edge of the substrate. The peripheral edge heating unit extends along the peripheral edge of the substrate in a substantially arcuate shape or a substantially annular shape. The irradiation unit includes: a plurality of light sources that extend along a predetermined first direction parallel to the upper surface of the substrate and are arranged along a second direction parallel to the upper surface of the substrate and orthogonal to the first direction; a housing configured so as to internally house the plurality of light sources; and a window section that is provided to the bottom wall of the housing and configured so as to transmit energy rays.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus. Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus that removes a layer deposited on a peripheral edge portion of a substrate by plasma by supplying a process gas into a chamber accommodating the substrate and plasmarizing the process gas. Prior Art Documents Patent Documents

[0003] [Patent Document 1] Japanese National Publication of International Patent Application No. 2011-514679 Summary of the Invention Problem to be Solved by the Invention

[0004] The present disclosure describes a substrate processing apparatus capable of etching a relatively high-hardness film provided on a peripheral edge portion of a substrate at a relatively high etching rate without using plasma. Means for Solving the Problem

[0005] An example of the substrate processing apparatus includes: a peripheral edge heating portion configured to heat a peripheral edge portion of a substrate; an irradiation portion arranged to be positioned above an upper surface of the substrate, and configured to irradiate the upper surface of the substrate with etching energy rays having a wavelength of 185 nm or less; and a supply portion configured to supply an oxygen-containing gas or ozone gas to the peripheral edge portion of the substrate. The peripheral edge heating portion extends in a substantially arc shape or a substantially annular shape along the peripheral edge portion of the substrate. The irradiation portion includes a plurality of light sources that extend along a predetermined first direction parallel to the upper surface of the substrate and are arranged along a second direction parallel to the upper surface of the substrate and orthogonal to the first direction, a housing configured to accommodate the plurality of light sources therein, and a window portion provided on a bottom wall of the housing and configured to transmit the energy rays. Effect of the Invention

[0006] According to the substrate processing apparatus described herein, it is possible to etch a relatively hard film provided on the peripheral edge of a substrate at a relatively high etching rate without using plasma. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a perspective view showing the substrate processing system. [Figure 2] Figure 2 is a cross-sectional view taken along line II-II in Figure 1. [Figure 3] Figure 3 is a schematic cross-sectional view showing the configuration of the etching unit. [Figure 4] Figure 4 is a block diagram showing an example of the main components of a substrate processing system. [Figure 5] Figure 5 is a schematic diagram showing an example of the controller's hardware configuration. [Figure 6] Figure 6 is a schematic partial cross-sectional view showing the configuration of another example of an etching unit. [Figure 7] Figure 7 is a schematic partial cross-sectional view showing the configuration of another example of an etching unit. [Figure 8] Figure 8(a) is a graph showing the experimental results for Experiment Example 1, and Figure 8(b) is a graph showing the experimental results for Experiment Example 2. [Figure 9] Figure 9(a) is a graph showing the experimental results for Experiment Example 3, and Figure 9(b) is a graph showing the experimental results for Experiment Example 4. [Figure 10] Figure 10(a) is a graph showing the relationship between the gap and the etching rate when the substrate was heated at 400°C in Experimental Examples 1 to 3, and Figure 10(b) is a graph showing the relationship between the ultraviolet irradiation time and the amount of etching when the substrate was heated at 300°C with the gap set to 1.2 mm in Experimental Examples 1 to 3. [Figure 11] Figure 11(a) is a graph showing the experimental results for Experiment Example 5, and Figure 11(b) is a graph showing the experimental results for Experiment Examples 6 and 7. [Modes for carrying out the invention]

[0008] In the following descriptions, the same reference numeral will be used for identical elements or elements with the same function, and redundant explanations will be omitted. Furthermore, in this specification, when referring to the top, bottom, right, and left of a figure, the direction of the reference numeral in the figure will be used as the reference.

[0009] [Configuration of the substrate processing system] First, the configuration of the substrate processing system 1 (substrate processing apparatus) will be described with reference to Figures 1 and 2. The substrate processing system 1 is configured to form a coating film on the upper surface Wu (see Figure 3) of the substrate W by applying a coating solution. The substrate processing system 1 is configured to form a protective film (not shown) on the upper surface Wu of the substrate W by hardening the coating film by heat treatment. The substrate processing system 1 is configured to remove the protective film on the peripheral Wp (see Figure 3) of the substrate W by etching.

[0010] The substrate W may be disc-shaped, or it may be a plate shape other than circular, such as a polygon. The substrate W may have a notch in which a part is cut out. The notch may be, for example, a notch (groove such as U-shaped or V-shaped), or a straight section extending in a straight line (a so-called orientation flat). The substrate W may be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other types of substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0011] The protective film may be a film containing carbon. Examples of carbon-containing films include diamond films, amorphous carbon films, and oxygen-containing spin-on carbon (SOC) films. That is, the carbon-containing film may also contain elements other than carbon, such as elements whose atoms are gaseous in their elemental form, or elements that combine with oxygen to become gaseous at normal pressure. In this specification, "surface of substrate W" refers to the outermost surface of substrate W. For example, in an example where a protective film is formed on substrate W, the surface of the protective film may be the "surface of substrate W".

[0012] The substrate processing system 1 comprises an input / output station 2, a processing station 3, and a controller Ctr (control unit). The input / output station 2 and the processing station 3 may be arranged in a single horizontal line, for example.

[0013] The loading / unloading station 2 introduces substrates W into the substrate processing system 1 and extracts substrates W from the substrate processing system 1. The loading / unloading station 2 can support, for example, multiple carriers 4 for substrates W. Each carrier 4 is configured to contain, for example, at least one substrate W in a sealed state. The loading / unloading station 2 incorporates a transport arm A1, as shown in Figure 2. The transport arm A1 is configured to take the substrates W from the carrier 4 and pass them to the shelf unit 5 of the processing station 3, and to receive the substrates W from the shelf unit 5 of the processing station 3 and return them to the carrier 4.

[0014] The processing station 3 includes at least one liquid processing unit U1, at least one heat processing unit U2, at least one etching unit U3 (substrate processing device), and a transport arm A2 for transporting substrates W to these units. The transport arm A2 is configured to take substrates W from the shelf unit 5 and pass them to each unit, and to receive substrates W from each unit and return them to the shelf unit 5.

[0015] The liquid processing unit U1 is configured to perform a process of supplying a processing liquid for forming a protective film to the upper surface Wu of a substrate W to form a coating film on the upper surface Wu of the substrate W. The heat treatment unit U2 is configured to perform a process of curing the coating film formed in the liquid processing unit U1 by heat treatment to form a protective film on the upper surface Wu of the substrate W. The etching unit U3 is configured to perform a process of removing the protective film at the peripheral edge portion Wp of the substrate W by etching. Details of the etching unit U3 will be described later.

[0016] The controller Ctr is configured to partially or entirely control the substrate processing system 1. Details of the controller Ctr will be described later.

[0017] [Configuration of Etching Unit] Next, the configuration of the etching unit U3 will be described with reference to FIG. 3. The etching unit U3 includes a rotation holding section 10, a support section 20, an elevating section 30, an irradiation section 40, gas supply sections 50 and 60, a peripheral edge heating section 70, and a reflection member 80.

[0018] The rotation holding section 10 includes a holding part 11 and a rotation driving part 12. The holding part 11 is configured to hold the horizontally arranged substrate W from below. The holding part 11 includes a central heating part 13. The central heating part 13 operates based on an operation signal from the controller Ctr, and is configured to mainly heat the central portion Wc of the substrate W held by the holding part 11. For example, the central heating part 13 may be configured to heat the central portion Wc of the substrate W to 400°C or lower, or may be configured to heat the central portion Wc of the substrate W to about 50°C to 400°C.

[0019] Although not shown in the drawings, the central heating part 13 may include a plurality of heating regions arranged in the radial direction of the substrate W. The plurality of heating regions may, for example, be arranged concentrically from the center of the substrate W toward the outer peripheral side. The plurality of heating regions may each individually incorporate a heat source (e.g., a heater). In this case, different temperatures can be set for each heating region.

[0020] The rotary drive unit 12 operates based on an operation signal from the controller Ctr and is configured to rotate the substrate W held by the holding unit 11. The rotary drive unit 12 may use, for example, an electric motor as a power source to rotate the holding unit 11 around a vertical axis passing through the center of the substrate W.

[0021] The support portion 20 is located below the holding portion 11. The support portion 20 includes a base portion 21 and a plurality of support pins 22 that protrude upward from the base portion 21. The tips of the support pins 22 can be inserted through through holes (not shown) provided in the holding portion 11.

[0022] The lifting unit 30 operates based on an operation signal from the controller Ctr and is configured to raise and lower the rotating holding unit 10. The substrate W held by the rotating holding unit 10 is displaced vertically as the lifting unit 30 raises and lowers the rotating holding unit 10. This changes the distance between the upper surface Wu of the substrate W and the irradiation unit 40. That is, when the lifting unit 30 raises the rotating holding unit 10, the gap between the upper surface Wu of the substrate W and the irradiation unit 40 becomes smaller, and when the lifting unit 30 lowers the rotating holding unit 10, the gap between the upper surface Wu of the substrate W and the irradiation unit 40 becomes larger. The lifting unit 30 may be, for example, an electric motor, an air cylinder, or the like.

[0023] The lifting unit 30 may be configured to raise and lower the support unit 20. That is, the tip of the support pin 22 may be configured to extend and retract from the upper surface of the holding unit 11 by the lifting unit 30. When the lifting unit 30 raises the support unit 20, the tip of the support pin 22 protrudes above the upper surface of the holding unit 11, and when the lifting unit 30 lowers the support unit 20, the tip of the support pin 22 descends below the upper surface of the holding unit 11. When the tip of the support pin 22 protrudes above the upper surface of the holding unit 11, the substrate W is supported by the tip of the support pin 22 when loading or unloading the substrate W to and from the etching unit U3.

[0024] The irradiation unit 40 is positioned above the rotating holding unit 10, the support unit 20, and the lifting unit 30. That is, the irradiation unit 40 is positioned above the upper surface Wu of the substrate W when the substrate W is held by the rotating holding unit 10. The irradiation unit 40 includes a housing 41, a plurality of light sources 42, a window unit 43, and a plurality of reflective members 44.

[0025] The housing 41 is configured to house a plurality of light sources 42 and a plurality of reflective members 44 inside. A through hole 41a is provided in the bottom wall of the housing 41. When the irradiation unit 40 is positioned above the substrate W, the through hole 41a overlaps with the entire substrate W when viewed from above. The through hole 41a may have a circular shape when viewed from above.

[0026] Multiple light sources 42 operate based on an operating signal from the controller Ctr and are configured to irradiate the upper surface Wu of the substrate W with etching energy rays having a wavelength of 185 nm or less. The multiple light sources 42 may be, for example, straight-tube lamp light sources. The multiple light sources 42 may extend along a direction X (first direction) parallel to the upper surface Wu of the substrate W. The multiple light sources 42 may be arranged at predetermined intervals along a direction Y (second direction) parallel to the upper surface Wu of the substrate W and perpendicular to direction X. In this case, the energy rays from the multiple light sources 42 will not irradiate the upper surface Wu of the substrate W uniformly. Therefore, the bias in the irradiation of energy rays onto the upper surface Wu of the substrate W may be equalized by rotating the substrate W relative to the multiple light sources 42 using the rotation holding unit 10.

[0027] The energy rays may be, for example, ultraviolet rays. The dominant wavelength of the energy rays may be 185 nm or less, 172 nm or less, 165 nm or less, 150 nm or less, 120 nm or less, or 100 nm or less. If the dominant wavelength of the energy rays is 172 nm, the light source 42 may be a xenon excimer UV lamp. If the dominant wavelength of the energy rays is 146 nm, the light source 42 may be a krypton discharge lamp. If the dominant wavelength of the energy rays is 126 nm, the light source 42 may be an argon discharge lamp.

[0028] The window portion 43 is configured to allow energy rays irradiated from the light source 42 to pass through. The material of the window portion 43 can be appropriately selected according to the wavelength of the energy rays irradiated from the light source 42. For example, if the dominant wavelength of the energy rays is 165 nm or more, quartz glass may be selected as the material of the window portion 43. If the dominant wavelength of the energy rays is 150 nm or more, calcium fluoride may be selected as the material of the window portion 43. If the dominant wavelength of the energy rays is 120 nm or more, magnesium fluoride may be selected as the material of the window portion 43.

[0029] The window portion 43 is attached to the through-hole 41a of the housing 41 so as to seal the through-hole 41a of the housing 41. Therefore, airtightness inside the housing 41 is maintained. When the irradiation portion 40 is positioned above the substrate W, the window portion 43 includes a central portion 43a (first portion) that faces the central portion Wc of the substrate W when viewed from above, and a peripheral portion 43b (second portion) that faces the peripheral portion Wp of the substrate W. The central portion 43a may be circular when viewed from above. The peripheral portion 43b may be annular in shape that surrounds the peripheral edge of the central portion 43a. The outer edge of the peripheral portion 43b may be located further outward than the outer edge of the substrate W when viewed from above. The outer edge of the peripheral portion 43b may be located about 2 mm to 5 mm further outward than the outer edge of the substrate W in the radial direction when viewed from above.

[0030] The central portion 43a may be recessed upward relative to the peripheral portion 43b, as illustrated in Figure 3. That is, the peripheral portion 43b may be located below the central portion 43a such that the straight-line distance (separation distance) between the peripheral portion 43b and the upper surface Wu of the substrate W is smaller than the straight-line distance (separation distance) between the central portion 43a and the upper surface Wu of the substrate W. The straight-line distance between the peripheral portion 43b and the upper surface Wu of the substrate W may be, for example, about 0.5 mm to 3 mm. The straight-line distance between the central portion 43a and the upper surface Wu of the substrate W may be, for example, about 10 mm to 30 mm.

[0031] Furthermore, if the wavelength of the energy rays irradiated from the light source 42 is ultraviolet light with a wavelength of 185 nm or less, the ultraviolet light is absorbed by oxygen molecules and converted into ozone in the space between the central part 43a and the upper surface Wu of the substrate W. If the straight-line distance between the central part 43a and the upper surface Wu of the substrate W is 10 mm or more, and the oxygen concentration in the space is 20% based on the oxygen-containing gas supplied by the gas supply unit 60, then most of the ultraviolet light is absorbed by oxygen molecules and hardly reaches the upper surface Wu of the substrate W. Therefore, parts of the substrate W other than the peripheral Wp are less affected by ultraviolet light. Also, if the straight-line distance between the central part 43a and the upper surface Wu of the substrate W is 30 mm or less, the concentration of ozone generated in the space between the central part 43a and the upper surface Wu of the substrate W increases. Therefore, a high concentration of ozone can be supplied to the peripheral Wp of the substrate W.

[0032] Each of the multiple reflective members 44 is positioned between the corresponding light source 42 and the top wall of the housing 41. The reflective members 44 may extend along the direction of extension (X direction) of the light source 42. The reflective members 44 may have an arc-shaped cross-section (e.g., circular arc, elliptical arc, bow shape, etc.) and may be recessed toward the top wall of the housing 41. The reflective members 44 are configured to reflect energy rays irradiated from the light source 42 toward the top wall of the housing 41 toward the window portion 43. The reflected light reflected by the reflective members 44 is irradiated toward the upper surface Wu of the substrate W through the window portion 43.

[0033] The gas supply unit 50 is configured to supply an inert gas (e.g., nitrogen gas, argon gas, etc.) into the housing 41. By filling the housing 41 with an inert gas, the attenuation of energy rays irradiated from the light source 42 within the housing 41 is suppressed. The gas supply unit 50 may be configured to supply a gas selected according to the wavelength of the energy rays irradiated from the light source 42 into the housing 41.

[0034] The gas supply unit 50 includes a supply source 51, a supply pipe 52, piping 53, a valve 54, and an exhaust pipe 55. The supply source 51 is configured to store inert gas. The supply pipe 52 is connected to the housing 41 and communicates with the inside of the housing 41. Piping 53 connects the supply source 51 and the supply pipe 52. Therefore, the inert gas from the supply source 51 is supplied to the housing 41 through piping 53 and the supply pipe 52. The valve 54 is provided in piping 53 and is configured to open and close based on an operating signal from the controller Ctr. The exhaust pipe 55 is connected to the housing 41 and communicates with the inside of the housing 41. Therefore, the inert gas supplied to the housing 41 is exhausted to the outside of the housing 41 through the exhaust pipe 55.

[0035] The gas supply unit 60 is configured to supply oxygen-containing gas to the space V between the window 43 and the upper surface Wu of the substrate W. The oxygen-containing gas may be air or dry air (air that does not contain water vapor or carbon dioxide).

[0036] The gas supply unit 60 includes a supply source 61 (gas source), at least one supply pipe 62 (flow path), piping 63 (flow path), and a valve 64. The supply source 61 is configured to store oxygen-containing gas. At least one supply pipe 62 penetrates the housing 41 and the window section 43 from the top wall of the housing 41 to the central part 43a of the window section 43, and communicates with the space V. Piping 63 connects the supply source 61 to at least one supply pipe 62. That is, if there are multiple supply pipes 62, piping 63 branches into multiple pipes midway and connects to each supply pipe 62. Therefore, the oxygen-containing gas from the supply source 61 is supplied into the space V through piping 63 and the supply pipes 62. The valve 64 is provided in piping 63 and is configured to open and close based on an operating signal from the controller Ctr.

[0037] If the wavelength of the energy rays irradiated from the light source 42 is ultraviolet light with a wavelength of 185 nm or less, the oxygen in the oxygen-containing gas supplied to space V reacts with the ultraviolet light to generate ozone. The generated ozone flows from space V towards the peripheral edge Wp of the substrate W. As the ozone passes through the gap between the peripheral edge 43b of the window portion 43 and the upper surface Wu of the substrate W, it reacts with the protective film at the peripheral edge Wp of the substrate W, etching the protective film. Alternatively, as the oxygen-containing gas supplied to space V flows from space V towards the peripheral edge Wp of the substrate W, it reacts with the ultraviolet light at the peripheral edge Wp of the substrate W to generate ozone. Then, the protective film at the peripheral edge Wp of the substrate W reacts with the ozone, etching the protective film. Note that the supply source 61 stores ozone gas, and the protective film at the peripheral edge Wp of the substrate W may be etched by the ozone supplied from the supply source 61.

[0038] The peripheral heating section 70 is configured to heat the peripheral edge Wp of the substrate W. The peripheral heating section 70 may be configured to heat the peripheral edge Wp of the substrate W to 400°C or higher. The peripheral heating section 70 may be substantially arc-shaped or substantially annular in shape so as to surround the peripheral edge Wp of the substrate W from the outside. Here, the substantially arc-shaped peripheral heating section 70 may include a super-arc-shaped peripheral heating section 70 that surrounds most of the peripheral edge Wp of the substrate W from the outside but is partially interrupted. The substantially arc-shaped peripheral heating section 70 may include a plurality of arc-shaped peripheral heating sections 70 that partially surround the peripheral edge Wp of the substrate W from the outside and are arranged along the peripheral edge Wp of the substrate W so as to form a substantially circular shape overall. The substantially annular peripheral heating section 70 may include an endless peripheral heating section 70 that surrounds the entire peripheral edge Wp of the substrate W from the outside. The peripheral heating section 70 includes a heating source 71 and a reflective member 72.

[0039] The heating source 71 may be an infrared lamp that heats the peripheral Wp of the substrate W by irradiating it with light. Generally, when it is desired to heat a part of an object locally and not heat other parts, it is known that, under the same energy conditions, applying energy instantaneously for as short a time as possible results in less heat diffusion to the area surrounding the localized area than continuous heating. Therefore, the heating source 71 may heat the peripheral Wp of the substrate W by intermittently irradiating it with light based on the Flash Lamp Anneal (FLA) method. In this case, the irradiation time of each light pulse to the peripheral Wp of the substrate W may be 1 millisecond to 1 second, and the irradiation interval may be 10 seconds or more, so that the light is irradiated intermittently to the peripheral Wp of the substrate W. The heating source 71 may also intermittently irradiate the peripheral Wp of the substrate W with light based on the Rapid Thermal Anneal (Spike RTA) method. Furthermore, if it is acceptable for the temperature of the inside of the substrate W other than the peripheral Wp to rise due to heating by the heating source 71 (i.e., if the effect is small even if there is a large amount of thermal diffusion), the heating source 71 may continuously irradiate the peripheral Wp of the substrate W with infrared rays.

[0040] The reflective member 72 has a roughly U-shaped cross-section so as to surround the heating source 71. That is, the reflective member 72 includes an opening 72a that is open inward. The opening 72a faces the end face of the peripheral edge Wp of the substrate W when the substrate W is held by the rotating holding part 10. The reflective member 72 is configured to reflect light irradiated from the heating source 71 toward the back side of the reflective member 72 (the wall side of the reflective member 72 opposite to the opening 72a) toward the opening 72a. The light reflected by the reflective member 72 is irradiated toward the peripheral edge Wp of the substrate W through the opening 72a. As a result, the peripheral edge Wp of the substrate W is heated more intensively.

[0041] The reflective member 80 is positioned so as to overlap with the peripheral edge 43b of the window portion 43 when viewed from above. The reflective member 80 may be substantially arc-shaped or substantially annular in shape, below the peripheral edge Wp of the substrate W, and surrounding the peripheral edge Wp of the substrate W from the outside. Here, the substantially arc-shaped reflective member 80 may include a super-arc-shaped reflective member 80 that surrounds most of the peripheral edge Wp of the substrate W from the outside but is partially interrupted. The substantially arc-shaped reflective member 80 may include a plurality of arc-shaped reflective members 80 that partially surround the peripheral edge Wp of the substrate W from the outside and are arranged along the peripheral edge Wp of the substrate W so as a whole form a substantially circular shape. The substantially annular reflective member 80 may include an endless reflective member 80 that surrounds the entire peripheral edge Wp of the substrate W from the outside.

[0042] The reflective member 80 is configured to reflect energy rays that have passed outside the peripheral edge Wp of the substrate W from the irradiation unit 40 toward the peripheral edge Wp of the substrate W. The reflective member 80 may, for example, be configured to reflect the reflected energy rays mainly toward the lower surface Wl and / or end face We of the peripheral edge Wp of the substrate W.

[0043] [Controller Details] As illustrated in Figure 4, the controller Ctr has a reading unit M1, a storage unit M2, a processing unit M3, and an instruction unit M4 as functional modules. These functional modules are merely a convenient division of the controller Ctr's functions into multiple modules, and do not necessarily mean that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by program execution, but may also be implemented by a dedicated electrical circuit (e.g., a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) that integrates these.

[0044] The reading unit M1 is configured to read a program from a computer-readable recording medium RM. The recording medium RM stores a program for operating each part of the substrate processing system 1, including the etching unit U3. The recording medium RM may be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. In the following, each part of the substrate processing system 1 may include a rotary drive unit 12, a central heating unit 13, a lifting unit 30, a light source 42, valves 54, 64, and a heating source 71.

[0045] The storage unit M2 is configured to store various types of data. For example, the storage unit M2 may store programs read from the recording medium RM by the reading unit M1, setting data input from the operator via an external input device (not shown), and so on.

[0046] The processing unit M3 is configured to process various types of data. For example, the processing unit M3 may generate signals to operate various parts of the substrate processing system 1 based on the various types of data stored in the storage unit M2.

[0047] The instruction unit M4 is configured to transmit the operation signals generated in the processing unit M3 to each part of the substrate processing system 1.

[0048] The hardware of the controller Ctr may consist of, for example, one or more control computers. The controller Ctr may include circuit C1 as a hardware configuration, as shown in Figure 5. Circuit C1 may consist of electrical circuit elements. Circuit C1 may include, for example, a processor C2, memory C3, storage C4, driver C5, and input / output ports C6.

[0049] The processor C2 may be configured to implement each of the above-described functional modules by executing a program in cooperation with at least one of the memory C3 and storage C4 and performing signal input and output via the input / output port C6. The memory C3 and storage C4 may function as a storage unit M2. The driver C5 may be a circuit configured to drive each part of the board processing system 1. The input / output port C6 may be configured to mediate signal input and output between the driver C5 and each part of the board processing system 1.

[0050] The board processing system 1 may have one controller Ctr, or it may have a controller group (control unit) composed of multiple controllers Ctr. If the board processing system 1 has a controller group, each of the above functional modules may be realized by one controller Ctr, or by a combination of two or more controllers Ctr. If the controller Ctr is composed of multiple computers (circuit C1), each of the above functional modules may be realized by one computer (circuit C1), or by a combination of two or more computers (circuit C1). The controller Ctr may have multiple processors C2. In this case, each of the above functional modules may be realized by one processor C2, or by a combination of two or more processors C2.

[0051] [Effect] As shown in the above example, since relatively high-energy energy rays with a wavelength of 185 nm or less are irradiated onto the upper surface Wu of the substrate W, the bonds between atoms constituting the film provided on the peripheral Wp of the substrate W can be easily broken. Furthermore, since oxygen-containing gas or ozone gas is supplied to the peripheral Wp of the substrate W, the atoms broken by the energy rays tend to bond with oxygen atoms rather than recombine. In addition, since the peripheral Wp of the substrate W is heated, the breaking of bonds between atoms by the energy rays and the bonding of oxygen atoms to the atoms broken by the energy rays tend to be activated. As a result, it is possible to etch a relatively hard film provided on the peripheral Wp of the substrate W at a relatively high etching rate without using plasma.

[0052] As shown in the above example, the linear distance between the peripheral edge 43b of the window portion 43 and the upper surface Wu of the substrate W can be set to be smaller than the linear distance between the central portion 43a of the window portion 43 and the upper surface Wu of the substrate W. In this case, the linear distance between the central portion 43a of the window portion 43 and the upper surface Wu of the substrate W is relatively large, so the energy rays are greatly attenuated before reaching the upper surface Wu of the central portion Wc of the substrate W, and the film in the central portion Wc of the substrate W is difficult to etch. On the other hand, the linear distance between the peripheral edge 43b of the window portion 43 and the upper surface Wu of the substrate W is relatively small, so the energy rays are less attenuated before reaching the upper surface Wu of the peripheral portion Wp of the substrate W, and the etching of the film in the peripheral portion Wp of the substrate W is promoted. Therefore, it becomes possible to intensively etch the film in the peripheral portion Wp of the substrate W.

[0053] According to the above example, oxygen-containing gas or ozone gas can be supplied through the supply pipe 62 and piping 63 to the space V between the window 43 and the upper surface Wu of the substrate W. In this case, the oxygen-containing gas or ozone gas supplied to the space V flows toward the peripheral edge Wp of the substrate W. Therefore, the oxygen-containing gas or ozone gas is supplied substantially uniformly to the peripheral edge Wp of the substrate W. Consequently, it becomes possible to etch the film on the peripheral edge Wp of the substrate W substantially uniformly at a relatively high etching rate.

[0054] In the above example, the reflective member 80 may be configured to reflect energy rays that have passed outside the peripheral edge Wp of the substrate W from the irradiation unit 40 toward the peripheral edge Wp of the substrate W. In this case, the reflected light of the energy rays from the reflective member 80 is irradiated onto the lower surface Wl and / or end surface We of the peripheral edge Wp of the substrate W. Therefore, it becomes possible to etch the film provided on the peripheral edge Wp of the substrate W from the upper surface Wu to the lower surface Wl almost simultaneously.

[0055] In the above example, the peripheral heating section 70 is configured to heat the peripheral Wp of the substrate W to 400°C or higher, and the central heating section 13 may be configured to heat the central Wc of the substrate W to 400°C or lower. In this case, since the peripheral Wp of the substrate W is heated to 400°C or higher, the severance of bonds between atoms by energy rays and the bonding of oxygen atoms to atoms severed by energy rays tend to become more active. On the other hand, since the central Wc of the substrate W is heated to 400°C or lower, the temperature difference between the peripheral Wp and the central Wc of the substrate W becomes smaller, making it less likely for the substrate W to warp. Therefore, coupled with the relatively low amount of heating to the central Wc of the substrate W, electronic components formed in the central Wc of the substrate W are less likely to be damaged. As a result, it is possible to etch the film on the peripheral Wp of the substrate W at a relatively high etching rate while suppressing damage to the electronic components formed in the central Wc of the substrate W.

[0056] In the above example, the substrate W can be rotated by the rotating holding unit 10. In this case, heating and energy beam irradiation are performed on the peripheral Wp of the substrate W while it is rotating. Therefore, heating and energy beam irradiation can be performed substantially uniformly over the entire circumference of the peripheral Wp of the substrate W. Consequently, it becomes possible to etch the film on the peripheral Wp of the substrate W substantially uniformly at a relatively high etching rate.

[0057] According to the above example, the peripheral heating unit 70 may be configured to heat the peripheral Wp of the substrate W by irradiating it with light. In this case, the surface of the peripheral Wp of the substrate W is particularly heated, while the central Wc and deeper parts of the substrate W tend not to heat up easily. As a result, etching at the peripheral Wp of the substrate W is promoted, and electronic components formed in the central Wc of the substrate W are less likely to be damaged. Therefore, it is possible to etch the film on the peripheral Wp of the substrate W at a relatively high etching rate while suppressing damage to electronic components formed in the central Wc of the substrate W.

[0058] According to the above example, the peripheral heating unit 70 may be configured to heat the peripheral Wp of the substrate W by intermittently irradiating the peripheral Wp with light. In this case, the surface of the peripheral Wp of the substrate W is heated, while the central Wc and deeper parts of the substrate W tend to be less heated. Therefore, it becomes possible to etch the film on the peripheral Wp of the substrate W at a higher etching rate while further suppressing damage to the electronic components formed in the central Wc of the substrate W.

[0059] In the above example, the irradiation time of light on the peripheral Wp of the substrate W can be set to 1 millisecond to 1 second, and the irradiation interval can be set to 10 seconds or more. In this case, the surface of the peripheral Wp of the substrate W is heated, while the central Wc and deep parts of the substrate W tend not to heat up as much. Therefore, it becomes possible to further suppress damage to electronic components formed in the central Wc of the substrate W while etching the film on the peripheral Wp of the substrate W at an even higher etching rate.

[0060] [Differentiation] The disclosures herein should be considered in all respects to be illustrative and not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the claims and the gist thereof.

[0061] (1) As illustrated in Figure 6, the etching unit U3 may further include an irradiation unit 90 and a peripheral heating unit 100 instead of the irradiation unit 40. The irradiation unit 90 is positioned to the side of the substrate W when the substrate W is held by the rotating holding unit 10. The irradiation unit 90 may be substantially arc-shaped or substantially annular so as to surround the peripheral edge Wp of the substrate W from the outside. Here, the substantially arc-shaped irradiation unit 90 may include a super-arc-shaped irradiation unit 90 that surrounds most of the peripheral edge Wp of the substrate W from the outside but is partially interrupted. The substantially arc-shaped irradiation unit 90 may include a plurality of arc-shaped irradiation units 90 that partially surround the peripheral edge Wp of the substrate W from the outside and are arranged along the peripheral edge Wp of the substrate W so as to form a substantially circular shape overall. The substantially annular irradiation unit 90 may include an endless irradiation unit 90 that surrounds the entire peripheral edge Wp of the substrate W from the outside. The illumination unit 90 includes a light source 91, a reflective member 92, and a window unit 93.

[0062] The light source 91 operates based on an operating signal from the controller Ctr and is configured to irradiate the peripheral edge Wp of the substrate W with etching energy rays having a wavelength of 185 nm or less. The light source 91 may be substantially arc-shaped or substantially annular so as to surround the peripheral edge Wp of the substrate W from the outside. Here, the substantially arc-shaped light source 91 may include a super-arc-shaped light source 91 that surrounds most of the peripheral edge Wp of the substrate W from the outside but is partially interrupted. The substantially arc-shaped light source 91 may include a plurality of arc-shaped light sources 91 that partially surround the peripheral edge Wp of the substrate W from the outside and are arranged along the peripheral edge Wp of the substrate W so as to form a substantially circular shape overall. The substantially annular irradiation section 90 may include an endless light source 91 that surrounds the entire peripheral edge Wp of the substrate W from the outside.

[0063] The reflective member 92 has a roughly U-shaped cross-section so as to surround the light source 91. That is, the reflective member 92 includes an opening 92a that is open inward. The opening 92a faces the end face We of the peripheral edge Wp of the substrate W when the substrate W is held by the rotating holding part 10. The reflective member 92 is configured to reflect light irradiated from the light source 91 toward the back side of the reflective member 92 (the wall side of the reflective member 92 opposite to the opening 92a) toward the opening 92a. The light reflected by the reflective member 92 is irradiated toward the peripheral edge Wp of the substrate W through the opening 92a. Therefore, in combination with the energy rays irradiated from the irradiation part 40, the energy rays are irradiated more concentratedly toward the peripheral edge Wp of the substrate W. In this case, the bonds between atoms constituting the film can be broken more easily. Therefore, it becomes possible to obtain a higher etching rate.

[0064] The window portion 93 is attached to the opening 92a of the reflective member 92 so as to seal the opening 92a. Therefore, airtightness within the reflective member 92 is maintained. The internal space formed by the reflective member 92 and the window portion 93 may be filled with, for example, an inert gas (e.g., nitrogen gas). The same material as the window portion 43 may be selected for the window portion 93. The straight-line distance between the surface of the window portion 93 and the end face We of the substrate W may be set to about 1 mm.

[0065] The peripheral heating section 100 is configured to heat the peripheral edge Wp of the substrate W. The peripheral heating section 100 may be configured to heat the peripheral edge Wp of the substrate W to 400°C or higher, similar to the peripheral heating section 70. The peripheral heating section 100 may be substantially arc-shaped or substantially annular. The peripheral heating section 100 may be positioned so as to overlap with the peripheral edge Wp of the substrate W when viewed from above, and may also be positioned above the peripheral edge Wp of the substrate W. Here, the substantially arc-shaped peripheral heating section 100 may include a partially interrupted, fully arc-shaped peripheral heating section 100. The substantially arc-shaped peripheral heating section 100 may include a plurality of arc-shaped peripheral heating sections 100 arranged along the peripheral edge Wp of the substrate W so as to form a substantially circular shape overall. The substantially annular peripheral heating section 100 may include an endless peripheral heating section 100. The peripheral heating section 100 includes a heating source 101 and a reflective member 102.

[0066] The heating source 101 may be an infrared lamp that heats the peripheral Wp of the substrate W by irradiating it with light, similar to the heating source 71.

[0067] The reflective member 102 has a roughly U-shaped cross-section so as to surround the heating source 101. That is, the reflective member 102 includes an opening 102a that is open inward. The opening 102a faces the upper surface Wu of the peripheral edge Wp of the substrate W when the substrate W is held by the rotating holding part 10. The reflective member 102 is configured to reflect light irradiated from the heating source 101 toward the back side of the reflective member 102 (the wall side of the reflective member 102 opposite to the opening 102a) toward the opening 102a. The light reflected by the reflective member 102 is irradiated toward the peripheral edge Wp of the substrate W through the opening 102a. As a result, the peripheral edge Wp of the substrate W is heated more intensively.

[0068] The wall portion 102b of the reflective member 102 located on the central side of the substrate W may extend to the vicinity of the upper surface Wu of the substrate W. That is, the straight-line distance (separation distance) between the lower end of the wall portion 102b and the upper surface Wu of the substrate W may be set to, for example, about 1 mm. The wall portion 102b of the reflective member 102 located on the central side of the substrate W may be located about 3 mm to 5 mm inward from the edge surface We of the substrate W.

[0069] Thus, because the lower end of the wall portion 102b is located near the upper surface Wu of the substrate W, the light irradiated towards the peripheral edge Wp of the substrate W through the opening 102a of the reflective member 102 is blocked by the wall portion 102b and has difficulty reaching the center of the substrate W beyond the wall portion 102b. As a result, the peripheral edge Wp of the substrate W is etched more intensively.

[0070] As described above, according to the embodiment illustrated in Figure 6, the irradiation unit 90 can extend in a substantially arc shape or a substantially ring shape along the peripheral edge Wp of the substrate W. In this case, energy rays can be irradiated from the irradiation unit 90 substantially uniformly over the entire circumference of the peripheral edge Wp of the substrate W. Therefore, it becomes possible to etch the film on the peripheral edge Wp of the substrate W substantially uniformly at a relatively high etching rate.

[0071] In the embodiment illustrated in Figure 6, the irradiation unit 90 includes a plurality of light sources 91 that extend in an arc shape along the peripheral edge Wp of the substrate W and are arranged in a substantially circular shape along the peripheral edge Wp of the substrate W, and the substrate W can be rotated by the rotation holding unit 10. In this case, as the substrate W rotates, the plurality of light sources 91 scattered along the peripheral edge Wp of the substrate W irradiate the peripheral edge Wp of the substrate W with energy rays. Therefore, energy rays can be irradiated substantially uniformly from the plurality of light sources 91 over the entire circumference of the peripheral edge Wp of the substrate W. Consequently, it becomes possible to etch the film on the peripheral edge Wp of the substrate W substantially uniformly at a relatively high etching rate.

[0072] As illustrated in Figure 6, the peripheral heating section 70 may be positioned so as to overlap with the peripheral edge Wp of the substrate W when viewed from above, and also below the peripheral edge Wp of the substrate W. In other words, the peripheral heating section 70 may be positioned between the rotating holding section 10 and the irradiation section 90.

[0073] (2) As illustrated in Figure 7, the etching unit U3 may further include an irradiation unit 90 and a light-shielding unit 110 instead of the irradiation unit 40. The irradiation unit 90 is positioned above the peripheral edge Wp of the substrate W when the substrate W is held by the rotating holding unit 10. The irradiation unit 90 may be substantially arc-shaped or substantially annular. Here, the substantially arc-shaped irradiation unit 90 may include an extended arc-shaped irradiation unit 90 which is partially interrupted. The substantially arc-shaped irradiation unit 90 may include a plurality of arc-shaped irradiation units 90 arranged along the peripheral edge Wp of the substrate W so as to form a substantially circular shape overall. The substantially annular irradiation unit 90 may include an endless irradiation unit 90. The irradiation unit 90 includes a light source 91, a reflective member 92, and a window 93.

[0074] The irradiation unit 90 illustrated in Figure 7 may have the same configuration as the irradiation unit 90 illustrated in Figure 6. Of the energy rays irradiated from the irradiation unit 90, those that pass outside the peripheral edge Wp of the substrate W are reflected by the reflecting member 80 toward the lower surface Wl and / or end face We of the peripheral edge Wp of the substrate W.

[0075] The light-shielding portion 110 includes a light-shielding member 111 and a light-shielding member 112. The light-shielding member 111 may, for example, be cylindrical. The light-shielding member 111 is located above the substrate W when the substrate W is held by the rotating holding portion 10. The upper end of the light-shielding member 111 may be connected to a wall portion of the reflective member 92 located on the center side of the substrate W. The light-shielding member 111 may extend to the vicinity of the upper surface Wu of the substrate W. That is, the straight-line distance (separation distance) between the lower end of the light-shielding member 111 and the upper surface Wu of the substrate W may be set to, for example, about 1 mm. The light-shielding member 111 may be located about 3 mm to 5 mm inward from the end face We of the substrate W.

[0076] Thus, because the lower end of the light-shielding member 111 is located near the upper surface Wu of the substrate W, the light irradiated towards the peripheral edge Wp of the substrate W through the opening 92a of the reflective member 92 is blocked by the light-shielding member 111 and has difficulty reaching the center of the substrate W beyond the light-shielding member 111. As a result, the peripheral edge Wp of the substrate W is etched more intensively.

[0077] The light-shielding member 112 may, for example, be cylindrical. The light-shielding member 112 is located below the substrate W when the substrate W is held by the rotating holding part 10. The light-shielding member 112 may extend to the vicinity of the lower surface Wl of the substrate W. That is, the straight-line distance (separation distance) between the upper end of the light-shielding member 112 and the lower surface Wl of the substrate W may be set to, for example, about 1 mm. The light-shielding member 112 may be located about 2 mm to 4 mm inward from the end surface We of the substrate W.

[0078] Thus, because the upper end of the light-shielding member 112 is located near the lower surface Wl of the substrate W, the light reflected by the reflective member 80 is blocked by the light-shielding member 112 and has difficulty reaching the center of the substrate W beyond the light-shielding member 112. As a result, the peripheral Wp of the substrate W is etched more intensively.

[0079] (3) The examples in Figures 6 and 7 may further include the irradiation unit 40 illustrated in Figure 3.

[0080] (4) In the examples of Figures 3, 6, and 7, the oxygen-containing gas or ozone gas may be supplied to the space V through the supply pipe 62 and the piping 63, or alternatively, to be supplied from the outside to the peripheral Wp of the substrate W. For example, the oxygen-containing gas or ozone gas may be supplied from the outside to the inside of the etching unit U3 by a blower provided on the top of the etching unit U3 (e.g., the top wall).

[0081] [Example of experiment] The following provides a more detailed explanation of this technology based on some experimental results, however, the claims and summary are not limited to these experimental results.

[0082] In the following experimental example, two types of test specimens were prepared, each with a protective film A and B, composed of different types of amorphous carbon, on its surface. The test specimens were obtained by cutting a substrate W into small pieces. Protective film A was less hard (softer) than protective film B.

[0083] Furthermore, in the following experimental example, unlike the etching unit U3 illustrated in Figure 3, an etching unit with a flat window portion 43 was used. In addition, this etching unit did not have a peripheral heating portion 70, and the test piece held in the holding portion 11 was heated to a predetermined temperature by the central heating portion 13.

[0084] (Experimental Example 1) With the gap (straight-line distance) between the window 43 and the top surface of the test specimen set to 1.2 mm, each test specimen was placed on the rotating holder 10, and while supplying dry air to the space between the window 43 and the rotating holder 10, ultraviolet light with a wavelength of 172 nm was irradiated onto the surface of the test specimen from the irradiation unit 40. At that time, the test specimens were heated to different temperatures (150°C, 200°C, 250°C, 300°C, 350°C, and 400°C). The results are shown in Figure 8(a). Note that Figure 8(a) is a semi-logarithmic graph with the vertical axis displayed on a logarithmic scale.

[0085] As shown in Figure 8(a), it was confirmed that the etching rate increased as the temperature of the test specimen increased. In particular, when the temperature of the test specimen was 400°C, the etching rate for protective film A was 588.6 nm / min and the etching rate for protective film B was 274.5 nm / min, indicating extremely high etching rates.

[0086] (Experimental Example 2) In Experimental Example 2, the specimen was processed in the same manner as in Experimental Example 1, except that the gap (straight-line distance) between the window 43 and the top surface of the specimen was set to 2.2 mm. The results are shown in Figure 8(b). Figure 8(b) is a semi-logarithmic graph with the vertical axis displayed on a logarithmic scale. As shown in Figure 8(b), in Experimental Example 2, as in Example 1, it was confirmed that the etching rate increased as the temperature of the specimen increased.

[0087] (Experimental Example 3) In Experimental Example 3, the specimen was processed in the same manner as in Experimental Example 1, except that the gap (straight-line distance) between the window 43 and the top surface of the specimen was set to 3.2 mm. The results are shown in Figure 9(a). Figure 9(a) is a semi-logarithmic graph with a logarithmic vertical axis. As shown in Figure 9(a), it was confirmed that, as in Experimental Example 1, the etching rate increased as the temperature of the specimen increased in Experimental Example 3.

[0088] Here, Figure 10(a) shows the relationship between the gap and the etching rate when the test specimen is heated at 400°C. As shown in Figure 10(a), it was confirmed that in both cases of protective film A and B, the etching rate increases as the gap decreases. Furthermore, Figure 10(b) shows the relationship between the UV irradiation time and the amount of etching when the test specimen is heated at 300°C with the gap set to 1.2 mm. As shown in Figure 10(b), it was confirmed that in both cases of protective film A and B, the amount of etching is approximately proportional to the UV irradiation time.

[0089] (Experimental Example 4) In Experimental Example 4, the substrate W was treated in the same manner as in Experimental Example 1, except that ultraviolet light was not irradiated onto the test specimens from the irradiation unit 40, and the test specimens were heated to different temperatures (400°C, 450°C, 500°C, 550°C, 600°C). That is, the test specimens were heated in a dry air atmosphere to etch the protective films A and B. The results are shown in Figure 9(b). Figure 9(b) is a semi-logarithmic graph with a logarithmic vertical axis. As shown in Figure 9(b), the etching rate increases as the temperature of the test specimen increases, but it was confirmed that the etching rate was significantly lower than in Experimental Examples 1-3.

[0090] (Experimental Example 5) In Experimental Example 5, the specimen was treated in the same manner as in Experimental Example 1, except that ultraviolet light was irradiated onto the specimen from the irradiation unit 40 while the area of ​​the window 43 facing the specimen was shielded from light, and the specimen was heated to 400°C. That is, the protective films A and B were etched by heating the specimen in an ozone gas atmosphere without directly irradiating it with ultraviolet light. The results are shown in Figure 11(a). As shown in Figure 11(a), it was confirmed that a larger etching rate could be obtained in an ozone gas atmosphere compared to the results obtained when the specimen was treated at 400°C in Experimental Example 4.

[0091] (Experimental Examples 6, 7) In Experimental Example 6, the specimen was processed in the same manner as in Experimental Example 1, except that the gap (straight-line distance) between the window portion 43 and the top surface of the specimen was set to 1.4 mm and the specimen was heated to 250°C. In Experimental Example 7, the specimen was processed in the same manner as in Experimental Example 6, except that nitrogen gas was supplied to the space between the window portion 43 and the rotating holding portion 10. That is, in Experimental Example 7, the specimen was heated in a nitrogen gas atmosphere to etch protective films A and B. These results are shown in Figure 11(b). As shown in Figure 11(a), it was confirmed that etching of protective films A and B hardly progressed in a nitrogen gas atmosphere.

[0092] [Other examples] Example 1. An example of a substrate processing apparatus comprises a peripheral heating unit configured to heat the peripheral edge of a substrate, an irradiation unit positioned above the upper surface of the substrate and configured to irradiate the upper surface of the substrate with etching energy rays having a wavelength of 185 nm or less, and a supply unit configured to supply oxygen-containing gas or ozone gas to the peripheral edge of the substrate. The peripheral heating unit extends in a substantially arc shape or substantially ring shape along the peripheral edge of the substrate. The irradiation unit includes a plurality of light sources that extend along a predetermined first direction parallel to the upper surface of the substrate and are arranged along a second direction parallel to the upper surface of the substrate and perpendicular to the first direction, a housing configured to house the plurality of light sources, and a window provided in the bottom wall of the housing and configured to transmit energy rays. In this case, since relatively high-energy energy rays having a wavelength of 185 nm or less are irradiated onto the upper surface of the substrate, the bonds between atoms constituting the film provided on the peripheral edge of the substrate can be easily broken. Furthermore, since oxygen-containing gas or ozone gas is supplied to the periphery of the substrate, atoms severed by the energy rays tend to bond with oxygen atoms rather than recombine. In addition, because the periphery of the substrate is heated, the severing of bonds between atoms by the energy rays and the bonding of oxygen atoms to the atoms severed by the energy rays tend to become more active. As a result, it becomes possible to etch a relatively hard film on the periphery of the substrate at a relatively high etching rate without using plasma.

[0093] Example 2. The apparatus of Example 1 may further include another irradiation unit configured to irradiate the peripheral edge of the substrate with another energy ray having a wavelength of 185 nm or less for etching. In this case, since the peripheral edge of the substrate is further irradiated with another energy ray, the bonds between atoms constituting the film can be broken more easily. Therefore, it becomes possible to obtain a higher etching rate.

[0094] Example 3. In the apparatus of Example 2, another irradiation unit may extend in a substantially arc shape or a substantially ring shape along the periphery of the substrate. In this case, another energy ray can be irradiated substantially uniformly over the entire circumference of the periphery of the substrate. Therefore, it becomes possible to etch the film on the periphery of the substrate substantially uniformly at a relatively high etching rate.

[0095] Example 4. The apparatus of Example 2 further comprises a rotating holding unit configured to hold and rotate the substrate, and another irradiation unit may include a plurality of other light sources that extend in an arc shape along the periphery of the substrate and are arranged in a substantially circular shape along the periphery of the substrate as a whole. In this case, as the substrate rotates, the plurality of other light sources scattered along the periphery of the substrate irradiate the periphery of the substrate with different energy rays. Therefore, the periphery of the substrate can be irradiated substantially uniformly with different energy rays over its entire circumference. Thus, it becomes possible to etch the film on the periphery of the substrate substantially uniformly at a relatively high etching rate.

[0096] Example 5. In any of the apparatuses in Examples 1 to 4, the window portion includes a first portion facing the center of the substrate and a second portion facing the periphery of the substrate and exhibiting an annular shape. The second portion may be positioned lower than the first portion such that the linear distance between the second portion and the upper surface of the substrate is smaller than the linear distance between the first portion and the upper surface of the substrate. In this case, the separation distance (linear distance) between the first portion and the center of the substrate is relatively large, so the energy rays are greatly attenuated before reaching the upper surface of the center of the substrate, making it difficult to etch the film in the center of the substrate. On the other hand, the separation distance (linear distance) between the second portion and the periphery of the substrate is relatively small, so the energy rays are less attenuated before reaching the upper surface of the periphery of the substrate, promoting etching of the film in the periphery of the substrate. Therefore, it becomes possible to intensively etch the film in the periphery of the substrate.

[0097] Example 6. In any of the apparatuses in Examples 1 to 5, the supply unit may include a flow path extending through the housing and the window, and a gas source configured to supply oxygen-containing gas or ozone gas between the window and the upper surface of the substrate via the flow path. In this case, the oxygen-containing gas or ozone gas supplied between the window and the upper surface of the substrate via the flow path flows toward the peripheral edge of the substrate. Therefore, the oxygen-containing gas or ozone gas is supplied substantially uniformly to the peripheral edge of the substrate. Consequently, it becomes possible to etch the film on the peripheral edge of the substrate substantially uniformly at a relatively high etching rate.

[0098] Example 7. Any of the devices in Examples 1 to 6 may further include a reflective member configured to reflect energy rays that have passed outside the peripheral edge of the substrate, from the energy rays irradiated from the irradiation unit, toward the peripheral edge of the substrate. In this case, the reflected light of the energy rays from the reflective member is irradiated toward the lower surface and / or end face of the peripheral edge of the substrate. As a result, it becomes possible to etch the film provided on the peripheral edge of the substrate from the upper surface to the lower surface almost simultaneously.

[0099] Example 8. Any apparatus from Examples 1 to 7 may further include a central heating section configured to heat the central part of the substrate, a peripheral heating section configured to heat the peripheral part of the substrate to 400°C or higher, and a central heating section configured to heat the central part of the substrate to 400°C or lower. In this case, since the peripheral part of the substrate is heated to 400°C or higher, the severance of bonds between atoms by energy rays and the bonding of oxygen atoms to atoms severed by energy rays tend to become more active. On the other hand, since the central part of the substrate is heated to 400°C or lower, the temperature difference between the peripheral part and the central part of the substrate becomes smaller, making it less likely for the substrate to warp. Therefore, coupled with the relatively low amount of heating to the central part of the substrate, electronic components formed in the central part of the substrate are less likely to be damaged. As a result, it is possible to etch the film on the peripheral part of the substrate at a relatively high etching rate while suppressing damage to electronic components formed in the central part of the substrate.

[0100] Example 9. Any apparatus from Examples 1 to 8 may further include a rotating holding unit configured to hold and rotate the substrate. In this case, heating and energy beam irradiation are performed on the peripheral edge of the substrate while the substrate is rotating. Therefore, heating and energy beam irradiation can be performed substantially uniformly over the entire circumference of the peripheral edge of the substrate. Consequently, it becomes possible to etch the film on the peripheral edge of the substrate substantially uniformly at a relatively high etching rate.

[0101] Example 10. In any of the apparatuses in Examples 1 to 9, the peripheral heating unit may be configured to heat the peripheral edge of the substrate by irradiating the peripheral edge of the substrate with light. In this case, the surface of the peripheral edge of the substrate is particularly heated, while the central and deeper parts of the substrate tend not to heat up easily. As a result, etching at the peripheral edge of the substrate is promoted, and electronic components formed in the central part of the substrate are less likely to be damaged. Therefore, it is possible to etch the film at the peripheral edge of the substrate at a relatively high etching rate while suppressing damage to electronic components formed in the central part of the substrate.

[0102] Example 11. In the apparatus of Example 10, the peripheral heating unit may be configured to heat the peripheral edge of the substrate by intermittently irradiating the peripheral edge of the substrate with light. In this case, the surface of the peripheral edge of the substrate is heated, while the central and deeper parts of the substrate tend to be less heated. Therefore, it becomes possible to etch the film on the peripheral edge of the substrate at a higher etching rate while further suppressing damage to the electronic components formed in the central part of the substrate.

[0103] Example 12. In the apparatus of Example 11, the peripheral heating section may be configured to heat the peripheral edge of the substrate by intermittently irradiating it with light such that the irradiation time for each light pulse on the peripheral edge of the substrate is 1 millisecond to 1 second, and the irradiation interval is 10 seconds or more. In this case, the surface of the peripheral edge of the substrate is heated, while the central and deeper parts of the substrate tend not to heat up as much. Therefore, it becomes possible to further suppress damage to electronic components formed in the central part of the substrate while etching the film on the peripheral edge of the substrate at an even higher etching rate. [Explanation of Symbols]

[0104] 1...Substrate processing system (substrate processing device), 10...Rotating holding unit, 13...Central heating unit, 40...Irradiation unit, 41...Housing, 42...Light source, 43...Window unit, 43a...Central part (first part), 43b...Peripheral part (second part), 60...Gas supply unit (supply unit), 61...Supply source (gas source), 62...Supply pipe (flow path), 63...Piping (flow path), 70...Peripheral heating unit, 80...Reflective member, 90...Irradiation unit (another irradiation unit), Ctr...Controller (control unit), U3...Etching unit (substrate processing device), V...Space, W...Substrate, Wc...Central part, Wp...Peripheral part, Wu...Top surface, X...Direction (first direction), Y...Direction (second direction).

Claims

1. A peripheral heating unit configured to heat the peripheral edge of the substrate, An irradiation unit is positioned above the upper surface of the substrate and configured to irradiate the upper surface of the substrate with etching energy rays having a wavelength of 185 nm or less, A supply unit configured to supply oxygen-containing gas or ozone gas to the peripheral edge of the substrate, The substrate comprises a central heating section configured to heat the central part of the substrate, The peripheral heating portion extends along the peripheral edge of the substrate in a substantially arc shape or a substantially ring shape, The irradiation unit is A plurality of light sources extending along a predetermined first direction parallel to the upper surface of the substrate, and arranged along a second direction parallel to the upper surface of the substrate and perpendicular to the first direction, A housing configured to house the aforementioned multiple light sources inside, The housing includes a window provided in the bottom wall and configured to allow the energy rays to pass through, The peripheral heating section is configured to heat the peripheral portion of the substrate to 400°C or higher. A substrate processing apparatus, wherein the central heating section is configured to heat the central part of the substrate to 400°C or below.

2. The substrate processing apparatus according to claim 1, further comprising another irradiation unit configured to irradiate the peripheral edge of the substrate with another energy ray for etching having a wavelength of 185 nm or less.

3. The aforementioned window section is A first portion facing the central part of the substrate, It includes a second portion that faces the peripheral edge of the substrate and has an annular shape, The substrate processing apparatus according to claim 1, wherein the second portion is located below the first portion such that the straight-line distance between the second portion and the upper surface of the substrate is smaller than the straight-line distance between the first portion and the upper surface of the substrate.

4. The aforementioned supply unit is A flow path extending through the housing and the window portion, The substrate processing apparatus according to claim 1, further comprising a gas source configured to supply oxygen-containing gas or ozone gas between the window portion and the upper surface of the substrate via the flow path.

5. The substrate processing apparatus according to claim 1, further comprising a reflective member configured to reflect energy rays that have passed outside the peripheral edge of the substrate from the energy rays irradiated from the irradiation unit toward the peripheral edge of the substrate.

6. The substrate processing apparatus according to claim 1, further comprising a rotating holding unit configured to hold and rotate the substrate.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein the peripheral heating unit is configured to heat the peripheral edge of the substrate by irradiating the peripheral edge of the substrate with light.

8. The substrate processing apparatus according to claim 7, wherein the peripheral heating unit is configured to heat the peripheral edge of the substrate by intermittently irradiating the peripheral edge of the substrate with light.

9. The substrate processing apparatus according to claim 8, wherein the peripheral heating unit is configured to heat the peripheral edge of the substrate by intermittently irradiating the peripheral edge of the substrate with light such that the time of each light irradiation to the peripheral edge of the substrate is 1 millisecond to 1 second, and the interval between light irradiations is 10 seconds or more.

Images