Semiconductor equipment, power converters

Abstract

This semiconductor device comprises: a semiconductor element having a main electrode and a signal electrode; a sealing resin that seals the semiconductor element; a conductive member having a protrusion protruding from a lower surface facing the semiconductor element and connected to the main electrode; a signal terminal having a main body portion that has one end bonded to the signal electrode of the semiconductor element via a bonding material and the other end extending to the outside of the sealing resin, and faces the lower surface of the conductive member, and a main body portion side surface opposite to the side surface of the protrusion; and an insulating heat conductive member disposed between the conductive member and the signal terminal, wherein the conductive member and the signal terminal each include a recess in at least one of between the lower surface of the conductive member and the protrusion, and between the main body portion and the main body portion side surface.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a power conversion device. Background Art

[0002] Semiconductors inevitably generate heat during operation, and a sufficient cooling mechanism is required especially when a large current flows therethrough. Patent Document 1 discloses a semiconductor device comprising: a semiconductor element having a main electrode and a signal pad; a sealing body that seals the semiconductor element; a conductor member connected to the main electrode of the semiconductor element inside the sealing body and exposed on a surface of the sealing body; a signal terminal having one end joined to the signal pad of the semiconductor element inside the sealing body via a bonding layer, and the other end protruding from the sealing body; and a support member provided on the conductor member inside the sealing body and supporting the signal terminal, wherein the signal terminal is provided with a constricted portion whose cross-sectional area is locally reduced along the longitudinal direction thereof, the support member is in contact with a section from the one end of the signal terminal to the constricted portion, and a material forming the support member has insulating properties and a higher thermal conductivity than a material forming the sealing body. Prior Art Document Patent Document

[0003] Patent Document 1 Japanese Unexamined Patent Publication No. 2020-096085 Summary of Invention Problem to be Solved by the Invention

[0004] In the invention described in Patent Document 1, there is room for improvement in cooling of the semiconductor in the semiconductor device. Means for Solving the Problem

[0005] A semiconductor device according to a first aspect of the present invention comprises: a semiconductor element having a main electrode and a signal electrode; a sealing resin for sealing the semiconductor element; a conductive member having a projection that protrudes from the lower surface facing the semiconductor element and is connected to the main electrode; a signal terminal having one end bonded to the signal electrode of the semiconductor element via a bonding material, the other end extending to the outside of the sealing resin, and having a main body facing the lower surface of the conductive member and a side surface of the main body facing the side surface of the projection; and an insulating thermal conductive member disposed between the conductive member and the signal terminal, wherein the conductive member and the signal terminal have recesses in at least one of the spaces between the lower surface of the conductive member and the projection, and between the main body and the side surface of the main body. The insulating heat conductive member has a first portion along the lower surface of the conductive member, a second portion along the side surface of the protruding portion, and a bent portion located between the first portion and the second portion, the recess is formed at a position opposite to the bent portion, and the recess forms a space to avoid contact between the conductive member and the bent portion. ru. A power conversion device according to a second aspect of the present invention comprises the semiconductor device described above and a main conversion circuit that converts and outputs the input power. [Effects of the Invention]

[0006] According to the present invention, the heat dissipation performance and insulation properties of semiconductor devices can be improved. [Brief explanation of the drawing]

[0007] [Figure 1] Circuit diagram of a semiconductor device [Figure 2] Perspective view of a semiconductor device [Figure 3] Exploded perspective view of a semiconductor device [Figure 4] Sectional view IV-IV in Figure 2 [Figure 5] VV cross-sectional view in Figure 2 [Figure 6] Enlarged view of section C in Figure 5 [Figure 7] External view of the second conductive member [Figure 8] Enlarged view of section C in modified example 1 [Figure 9] Enlarged view of section C in modified example 2 [Figure 10] Diagram showing the power conversion device in modified example 3. [Modes for carrying out the invention]

[0008] —Embodiment— The embodiments of the semiconductor device will be described below with reference to Figures 1 to 7.

[0009] Figure 1 is a circuit diagram of the semiconductor device 300. The semiconductor device 300 comprises semiconductor elements: a first element 200U, a second element 200L, a third element 210U, and a fourth element 210L. The first element 200U and the second element 200L are IGBTs (Insulated Gate Bipolar Transistors). The third element 210U and the fourth element 210L are diodes. The first element 200U, the second element 200L, the third element 210U, and the fourth element 210L may also be FETs (Field-Effect Transistors), etc. If FETs are used, semiconductor elements using SiC (Silicon Carbide) may also be used.

[0010] The semiconductor device 300 comprises an upper arm 301 and a lower arm 302. The upper arm 200 comprises a first element 200U, a third element 210U, a positive terminal 311, and a signal terminal 340. The lower arm 210 comprises a second element 200L, a fourth element 210L, a negative terminal 312, and a signal terminal 340. The positive terminal 311 and the negative terminal 312 are connected to a capacitor or the like located outside the semiconductor device 300, and power is supplied to the semiconductor device 300 from the outside.

[0011] The signal terminal 340 is connected to the control board and controls the switching operation of the first element 200U and the second element 200L. The semiconductor device 300 includes an AC terminal 313 and an intermediate connection part 303. The intermediate connection part 303 electrically connects the upper arm 301 and the lower arm 302. The intermediate connection part 303 is electrically connected to the AC terminal 313. The AC terminal 313 outputs current to the outside of the semiconductor device 300. Although the semiconductor device 300 shown in Figure 1 has a 2-in-1 configuration with two sets of IGBTs and diodes, a 1-in-1 configuration with only one set of IGBTs and diodes is also acceptable.

[0012] Figure 2 is a perspective view of the semiconductor device 300. In Figure 2 and subsequent figures, mutually orthogonal XYZ axes are defined to clarify the correlation of the drawings. The upper arm 301 and lower arm 302 of the semiconductor device 300 are arranged side by side in the Y-axis direction. Specifically, the upper arm 301 is positioned on the positive side of the Y-axis, and the lower arm 302 is positioned on the negative side of the Y-axis. Many components of the semiconductor device 300 are sealed with sealing resin 380. The positive terminal 311, negative terminal 312, AC terminal 313, and signal terminal 340 have one end exposed from the sealing resin 380.

[0013] Figure 3 is an exploded perspective view of the semiconductor device 300. However, in Figure 3, the sealing resin 380 that covers most of the semiconductor device 300 is excluded from the illustration. The viewpoint in Figure 3 is the same as in Figure 2. The semiconductor device 300 has two first conductive members 320 shown at the bottom of the illustration and two second conductive members 330 shown at the top of the illustration. One set each of the first conductive member 320 and the second conductive member 330 is required as components of the upper arm 301 and the lower arm 302. Note that if the semiconductor device 300 is a 1-in-1 device that consists of only one of either the upper arm 301 or the lower arm 302, the semiconductor device 300 is provided with only one set of the first conductive member 320 and the second conductive member 330.

[0014] The first element 200U and the third element 210U are sandwiched between the first conductive member 320 and the second conductive member 330 that constitute the upper arm 301. The second element 200L and the fourth element 210L are sandwiched between the first conductive member 320 and the second conductive member 330 that constitute the lower arm 302.

[0015] Each of the first element 200U and the second element 200L has a first main electrode 201, a second main electrode 202, and a signal electrode 203. Each of the third element 210U and the fourth element 210L has a third main electrode 211 and a fourth main electrode 212. The first main electrode 201 and the third main electrode 211 are joined to the first conductive member 320 using a first bonding material 350. The second main electrode 202 and the fourth main electrode 212 are joined to the second conductive member 330 using a second bonding material 351. The signal electrode 203 is joined to the signal terminal 340 using a third bonding material 352.

[0016] A positive electrode terminal 311 is connected to the first conductive member 320 that constitutes the upper arm 301 shown on the Y-axis positive side. An AC terminal 313 is connected to the first conductive member 320 that constitutes the lower arm 302 shown on the Y-axis negative side. The negative electrode terminal 312 is arranged at a position close to the first conductive member 320 constituting the lower arm 302, and has a negative electrode terminal connecting portion 316 on the side close to the first conductive member 320. The AC terminal 313 has an intermediate terminal 317.

[0017] The intermediate terminal 317 is arranged so as to extend toward the upper arm 301 side. The second conductive member 330 has a terminal connecting portion 332. The negative electrode terminal connecting portion 316 is joined to the terminal connecting portion 332 of the second conductive member 330 constituting the lower arm 302 using a fourth joining material 353. The intermediate terminal 317 is joined to the terminal connecting portion 332 of the second conductive member 330 constituting the upper arm 301 using a fifth joining material 354.

[0018] Each of the first joining material 350, the second joining material 351, the third joining material 352, the fourth joining material 353, and the fifth joining material 354 is solder or a sintered material. Each of the first joining material 350, the second joining material 351, the third joining material 352, the fourth joining material 353, and the fifth joining material 354 may have the same composition or different compositions. The first conductive member 320 and the second conductive member 330 may be a metal plate such as copper or aluminum, or may be an insulating substrate having a wiring layer and an insulating layer.

[0019] The signal terminal 340 is bonded to the second conductive member 330 via an insulating heat conductive member 360. The insulating heat conductive member 360 is a resin having adhesive strength. This resin contains a thermally conductive filler, which enhances thermal conductivity between the signal terminal 340 and the insulating heat conductive member 360. It is preferable that the insulating heat conductive member 360 is formed into a sheet shape for easy handling. The insulating heat conductive member 360 is adhered by applying pressure while being in close contact with the signal terminal 340 and the second conductive member 330. By performing adhesion under pressure, voids at the bonding interface are reduced, and insulation performance and heat dissipation performance are improved.

[0020] Figure 4 is a cross-sectional view taken along line IV-IV in Figure 2. However, for illustrative purposes, the scale in the Z-axis direction in Figure 4 differs from that of the other figures. In Figure 4, the front of the illustration is the positive X-axis direction, the right is the positive Y-axis direction, and the top is the positive Z-axis direction. The first element 200U and the third element 210U, which constitute the upper arm 301, are arranged side by side in the X-axis direction and therefore overlap in the viewpoint of Figure 4. Similarly, the second element 200L and the fourth element 210L, which constitute the lower arm 302, are arranged side by side in the X-axis direction and therefore overlap in the viewpoint of Figure 4.

[0021] The first conductive member 320 is joined to the first bonding material 350 on the positive Z-axis side. The side of the first conductive member 320 opposite to the first bonding material 350, i.e., the side on the negative Z-axis side, is called the first heat dissipation surface 321. The first heat dissipation surface 321 is exposed from the sealing resin 380. The second conductive member 330 is joined to the second bonding material 351 on the negative Z-axis side. The side of the second conductive member 330 opposite to the second bonding material 351, i.e., the side on the positive Z-axis side, is called the second heat dissipation surface 331. The second heat dissipation surface 331 is exposed from the sealing resin 380.

[0022] The first heat dissipation surface 321 and the second heat dissipation surface 331 are thermally connected to a cooler (not shown) via an insulating member, thereby dissipating the heat generated by the first element 200U, the second element 200L, the third element 210U, and the fourth element 210L. For example, an insulating thermal conductive material and a cooler may be attached to the surfaces of the first heat dissipation surface 321 and the second heat dissipation surface 331. Alternatively, for example, an insulating thermal conductive material may be attached to the surfaces of the first heat dissipation surface 321 and the second heat dissipation surface 331 and thermally connected to the cooler via a thermal conductive material such as grease.

[0023] Figure 5 is a cross-sectional view of the VV section in Figure 2. In Figure 5, the right is the positive X-axis direction, the back of the figure is the positive Y-axis direction, and the top is the positive Z-axis direction. The portion of the second conductive member 330 that protrudes in the negative Z-axis direction is called the protruding portion 338, and the configuration obtained by removing the protruding portion 338 from the second conductive member 330 is called the base portion 330B. The side surface of the protruding portion 338 is called the protruding portion side surface 337, and the end face of the base portion 330B on the negative Z-axis side is called the base portion bottom surface 333. The center position of the protruding portion 338 on the X-axis is called the base center 335. The protruding portion side surface 337 is parallel to the Z-axis.

[0024] The second conductive member 330 has a recess 334 at the base of the protrusion 338 where the signal terminal 340 is located, and at a position symmetrical to the base center 335 at that location. The base of the protrusion 338 is the position where the side surface 337 of the protrusion and the lower surface 333 of the base intersect. The second conductive member 330 can be manufactured by various methods, but it is desirable to form the recesses by drawing or extrusion to improve productivity. In this case, as described above, providing the recess 334 at a symmetrical position with respect to the base center 335 eliminates the uneven distribution of force on the second conductive member 330, making production easier. Note that the presence of the recess 334 at a symmetrical position with respect to the base center 335 is not a mandatory configuration. The recess 334 on the side where the signal terminal 340 is located is mandatory, but the recess 334 on the opposite side, i.e., the right side in Figure 5, is not required.

[0025] The box at the bottom of Figure 5 is an enlarged view of the area near the X-axis negative end of the base portion 330B. The insulating heat conductive member 360 is bonded to the lower surface 333 of the base portion. The X-axis negative end 362 of the insulating heat conductive member 360 is bonded in a position that does not protrude from the side surface 336 of the conductor member. In other words, when the semiconductor device 300 is viewed from the Z-axis positive side, the insulating heat conductive member 360 is not visible even if the sealing resin 380 is not present. By eliminating the protrusion of the insulating heat conductive member 360, damage to the insulating heat conductive member 360 can be suppressed, handling during the manufacturing of the semiconductor device 300 becomes easier, and the productivity of the semiconductor device 300 is improved.

[0026] The signal terminal 340 has a terminal body portion 344, a first bent portion 342, a second bent portion 343, a low-rigidity portion 341, and a terminal portion 345. The terminal body portion 344 is bonded to the insulating heat conductive member 360. The second bent portion 343 is located inside the end portion 362 of the insulating heat conductive member 360, i.e., on the positive X-axis side in Figure 5. If the X-axis positions of the end portion 362 and the second bent portion 343 were the same, it would be difficult to reliably ensure insulation. Therefore, the insulation performance is improved by positioning the second bent portion 343 inside the end portion 362.

[0027] The terminal portion 345 is exposed from the sealing resin 380. The first bent portion 342 is located between the terminal portion 345 and the second bent portion 343. The first bent portion 342 is bent so that the terminal portion 345 is positioned substantially on the same plane as the positive terminal 311, the negative terminal 312, and the AC terminal 313. Hereinafter, the area to the left of the first bent portion 342 of the signal terminal 340 and inside the sealing resin 380 will be referred to as the first region 340X, and the area outside the sealing resin 380 of the signal terminal 340 will also be referred to as the second region 340Y. Because the terminal portion 345 is substantially on the same plane as the positive terminal 311, the negative terminal 312, and the AC terminal 313, the mold used when sealing with the sealing resin 380 can be simplified, and productivity can be improved. The low-rigidity portion 341 is located between the first bent portion 342 and the terminal portion 345. The low-rigidity portion 341 is sealed with sealing resin 380. The low-rigidity portion 341 has lower rigidity than the terminal portion 345 and the second bent portion 343.

[0028] When the terminal portion 345 is pressed with a mold in order to seal it using the sealing resin 380, the stress on the adhesive portion of the insulating heat conductive member 360 of the second bent portion 343 can be reduced by the stress received by the low-rigidity portion 341, thereby improving the reliability of the semiconductor device 300. Because the low-rigidity portion 341 is sealed with the sealing resin 380, the stress on the low-rigidity portion 341 when an external force is applied to the terminal portion 345 can be reduced, thereby improving the reliability of the semiconductor device 300.

[0029] Figure 6 is an enlarged view of section C in Figure 5. The viewpoint in Figure 6 is the same as in Figure 5. The terminal body 344 has a protrusion 347 at a position opposite to the signal electrode 203. The protrusion 347 is joined to the signal electrode 203 using a third bonding material 352. The heat generated by the first element 200U and the second element 200L is transferred from the lower part of the figure to the upper part as follows: that is, heat is transferred from the signal electrode 203 of the first element 200U and the second element 200L to the protrusion 347, the terminal body 344 of the signal terminal 340, the insulating heat conductive member 360, and the lower surface 333 of the base.

[0030] The protrusion 347 has a protrusion side surface 348. The protrusion side surface 348 is inclined and slopes to widen toward the lower surface 333 of the base. The inclination of the protrusion side surface 348 allows heat to spread more easily, improving heat dissipation. The shape of the protrusion 347 without using the protrusion side surface 348 can be described as follows: That is, the protrusion 347 that protrudes toward the signal electrode 203 at the signal terminal 340 has a shape that tapers toward the signal electrode 203.

[0031] If the position of the protrusion 347 deviates from that of the signal electrode 203, it is undesirable because it could lead to unintended short circuits. However, requiring excessive precision in the position of the protrusion 347 would worsen the productivity of the semiconductor device 300. Therefore, by reducing the area of ​​the tip of the protrusion 347 on the signal electrode 203 side, the required positional accuracy of the protrusion 347 is relaxed, improving the productivity of the semiconductor device 300. However, since a long, slender protrusion 347 increases thermal resistance, the cross-sectional area of ​​the XY plane on the Z-axis positive side is increased to prevent an increase in thermal resistance and ensure smooth heat energy transfer.

[0032] The insulating heat conduction member 360 includes a base heat transfer portion 365 extending in the X-axis direction, a lateral heat transfer portion 364 extending in the Z-axis direction, and a corner portion of the heat conduction member bend 363. The heat conduction member bend 363 can also be described as the region sandwiched between the base heat transfer portion 365 and the lateral heat transfer portion 364. The heat conduction member bend 363, the lateral heat transfer portion 364, and the base heat transfer portion 365 are integrally formed. The protruding portion side surface 337 is bonded to the right side surface 344R of the main body using the lateral heat transfer portion 364. Bonding the protruding portion side surface 337 to the right side surface 344R of the main body improves heat dissipation. Positioning the signal terminal 340 is facilitated by abutting the right side surface 344R of the main body against the right side surface 344R of the main body.

[0033] The length of the lateral heat transfer portion 364 is set in the Z-axis direction so as not to come into contact with the second bonding material 351. A load of σy is applied to the base heat transfer portion 365 of the insulating heat conductive member 360 in order to bond it to the lower surface 333 of the base portion. A load of σx is applied to the lateral heat transfer portion 364 of the insulating heat conductive member 360 in order to bond it to the side surface 337 of the protruding portion.

[0034] Because the heat conduction member bent portion 363 is bent, it tends to be more susceptible to external forces compared to the lateral heat transfer portion 364 and the base heat transfer portion 365. If the heat conduction member bent portion 363 is subjected to external forces, its insulation performance may deteriorate. To address this, a recess 334 is provided, preventing contact between the second conductive member 330 and the heat conduction member bent portion 363, thereby ensuring insulation.

[0035] Figure 7 is an external view of the second conductive member 330. However, Figure 7 has a different viewpoint than Figure 3, showing the Z-axis negative side surface which was hidden in Figure 3. The protruding portions 338 that project toward the Z-axis negative side are arranged in line along the X-axis direction. The recesses 334 exist along the entire width in the Y-axis direction of the second conductive member 330 at the X-axis positive and X-axis negative ends of the protruding portions 338. Therefore, the recesses 334 can be easily processed by drawing or extrusion. Since the Y-axis direction in which the recesses 334 extend is perpendicular to the X-axis direction in which the signal terminals 340 extend, it becomes easy to provide a flat surface on the lower surface 333 of the base portion, and attachment to the insulating heat conductive member 360 becomes easier.

[0036] According to the above-described embodiment, the following effects and advantages can be obtained. (1) The semiconductor device 300 comprises a first element 200U having a first main electrode 201, a second main electrode 202, and a signal electrode 203; a sealing resin 380 that seals the first element 200U; a second conductive member 330 having a projection 338 that protrudes from a base portion 330B facing the first element 200U and is connected to the first main electrode 201; a signal terminal 340 having one end bonded to the signal electrode 203 of the semiconductor element via a bonding material, the other end extending to the outside of the sealing resin 380, and having a terminal body portion 344 that faces the lower surface 333 of the base portion which is the lower surface of the second conductive member 330, and a right side surface 344R of the body portion that faces the side surface 337 of the projection 338; and an insulating thermal conductive member 360 disposed between the second conductive member 330 and the signal terminal 340. The second conductive member 330 and the signal terminal 340 are provided with a recess 334 between the lower surface 333 of the base portion and the protruding portion 338. This improves heat dissipation performance and insulation. Specifically, the signal electrode 203 and the signal terminal 340 are thermally connected to the second conductive member 330 via the insulating heat conductive member 360. Heat is dissipated from the signal terminal 340 to the second conductive member 330, and the heat dissipation performance is improved by providing a heat dissipation path. In addition, the insulation performance is improved by providing the recess 334 at the point where the insulating heat conductive member 360 is bent.

[0037] (2) The signal terminal 340 has a first region 340X that is sealed in the sealing resin 380 and a second region 340Y that extends to the outside of the sealing resin 380. The first region 340X of the signal terminal 340 has a low-rigidity portion 341 which is less rigid than the other parts of the first region 340X. Therefore, when sealing with the sealing resin 380, stress is less likely to be applied to the adhesive interface between the insulating heat conductive member 360 and the signal terminal 340, peeling can be suppressed and productivity can be improved.

[0038] (3) The insulating heat conductive member 360 is positioned within the range of the second conductive member 330 when viewed from the direction in which the protrusion 338 protrudes, i.e., the Z-axis direction. Therefore, cracking of the insulating heat conductive member 360 during the manufacturing of the semiconductor device 300 is prevented, and the productivity of the semiconductor device 300 is improved.

[0039] (4) The second conductive member 330 has a terminal portion 345 that extends to the outside of the sealing resin 380. The terminal portion 345 is arranged on the same plane as the second region 340Y. As a result, the mold for the sealing resin 380 can be simplified, and the productivity of the semiconductor device 300 can be improved.

[0040] (5) The recess 334 is formed symmetrically with respect to the protrusion 338. Therefore, press forming of the recess 334 is made easier, and the productivity of the semiconductor device 300 is improved.

[0041] (6) The recess 334 extends in a direction perpendicular to the extension direction of the signal terminal 340. Therefore, the recess 334 can be formed by extrusion molding or drawing molding, improving the productivity of the semiconductor device 300.

[0042] (7) The terminal body portion 344 has a protrusion 347 that faces the signal electrode 203, and the protrusion 347 is provided with a slope that widens from the signal electrode 203 to the terminal body portion 344. This improves heat dissipation.

[0043] (Variation 1) Figure 8 is an enlarged view of section C in Modification 1. Figure 8 corresponds to Figure 6 in the embodiment. In Modification 1, the right side surface 344R of the main body and the side surface 337 of the protruding part are sloped. In other words, in the embodiment described above, the right side surface 344R of the main body and the side surface 337 of the protruding part were parallel to the Z axis, but in this modification, the right side surface 344R of the main body and the side surface 337 of the protruding part are not parallel to the Z axis. In this modification, since the side surface 337 of the protruding part is inclined, when a load of σ0 is applied, a load σ1 that adheres the insulating heat conductive member 360 to the side surface 337A of the protruding part can be generated, improving productivity. It is preferable that the inclination angle θ is 135° or more. If the inclination angle θ is large, σ1 increases, and the adhesion of the insulating heat conductive member 360 becomes easier.

[0044] In this modified example, the recess 334A has a recessed side surface 392A. The recessed side surface 392A is inclined. The inclination makes it easier to process during drawing and extrusion, thereby improving productivity. The other shapes are the same as in the embodiment.

[0045] In this modified example, in addition to the embodiments described above, the following effects and advantages can be obtained. (8) The sides of the main body are inclined so as to move closer to the main electrode from the main body. As a result, heat from the signal electrode 203 spreads more easily, improving heat dissipation performance.

[0046] (9) The angle of the side of the main body with respect to the main body is 135 degrees or more. Therefore, the load required to bond the insulating heat conductive member 360 is increased, making it easier to bond the insulating heat conductive member 360.

[0047] (Modification 2) Figure 9 is an enlarged view of section C in the modified example 2. Figure 9 corresponds to Figure 6 in the embodiment. In the embodiment described above, there was a recess 334 at the intersection of the protruding portion 338 and the lower surface 333 of the base portion. However, in this modified example, the terminal body portion 344 has a terminal recess 346B. The terminal recess 346B is positioned so that the heat conductive member bend portion 363 avoids the terminal body portion 344. That is, the terminal recess 346B is provided on the opposite side of the heat conductive member bend portion 363 from the recess 334. Therefore, by providing the terminal recess 346B instead of the recess 334, the insulation performance can be improved in the same way as in the embodiment. The other structures are the same as in the embodiment.

[0048] In this embodiment, a recess 334 is provided, and in this modified example 2, a terminal recess 346B is provided. However, the semiconductor device 300 only needs to have at least one of the recess 334 and the terminal recess 346B. In other words, the semiconductor device 300 may have both the recess 334 and the terminal recess 346B.

[0049] (Variation 3) Figure 10 shows the power converter 1 in modified example 3. The power converter 1 comprises three semiconductor devices 300, a group of film capacitors 3G for voltage conversion, and a control board 7. This is a circuit diagram of the power converter 1. The power converter 1 converts between DC power and AC power. The power converter 1 can either convert DC power supplied from the high-voltage battery 2 into AC power and supply it to the motor generator MG, or convert AC power supplied from the motor generator MG into DC power and supply it to the high-voltage battery 2. The high-voltage battery 2 is a secondary battery such as a lithium-ion battery or a nickel-metal hydride battery.

[0050] The motor generator MG outputs the driving force for the HEV or EV using AC power. The motor generator MG also acts as a generator that regenerates the AC power generated when the motor rotates due to an external force back into the high-voltage battery 2. The motor generator MG is, for example, a three-phase motor with a Y connection as shown in Figure 1.

[0051] The film capacitor group 3G is a module formed by arranging multiple film capacitors 3 in a resin case and sealing them in resin. The film capacitor group 3G performs smoothing when converting DC power to AC power. Each semiconductor device 300 converts the DC power of the high-voltage battery 2 into three-phase AC power by controlling the on and off timing of the switching elements that make up the U-phase arm, V-phase arm, and W-phase arm. The control board 7 is equipped with a microcomputer that performs calculation processing. The control board 7 creates gate pulse signals based on input information from the higher-level controller 10 and outputs them to each semiconductor device 300.

[0052] According to this modified version, the following effects can be obtained. (10) The power converter 1 comprises a semiconductor device 300 and a control board 7 for controlling the semiconductor device 300. Therefore, it is possible to provide a power converter 1 that incorporates a semiconductor device 300 with excellent heat dissipation performance and insulation properties. The power converter 1 may also consist of only one semiconductor device 300 and be compatible with single-phase power.

[0053] The embodiments and modifications described above may be combined in any way. Although various embodiments and modifications have been described above, the present invention is not limited to these. Other embodiments that can be conceivable within the scope of the technical idea of ​​the present invention are also included within the scope of the present invention. [Explanation of Symbols]

[0054] 1: Power converter, 7: Control board, 200U: First element, 201: First main electrode, 203: Signal electrode, 300: Semiconductor device, 330: Second conductive member, 330B: Base section, 331: Second heat dissipation surface, 332: Terminal connection section, 333: Bottom surface of base section, 334, 334A: Recess, 335: Base center, 336: Side surface of conductor member, 337, 337A: Protrusion 338: Protruding part, 340: Signal terminal, 341: Low rigidity part, 342: First bend, 343: Second bend, 344: Terminal body part, 344R: Right side of body part, 345: Terminal part, 346B: Terminal recess, 347: Convex part, 348: Side of convex part, 360: Insulating heat conductive member, 363: Bent part of heat conductive member, 380: Sealing resin, 392A: Side of recess

Claims

1. A semiconductor device having a main electrode and a signal electrode, A sealing resin for sealing the semiconductor element, A conductive member having a protruding portion that extends from the lower surface facing the semiconductor element and is connected to the main electrode, A signal terminal having one end bonded to the signal electrode of the semiconductor element via a bonding material, the other end extending to the outside of the sealing resin, and having a main body portion facing the lower surface of the conductive member, and a side surface of the main body portion facing the side surface of the protruding portion, An insulating thermal conductive member is disposed between the conductive member and the signal terminal, Equipped with, The conductive member and the signal terminal are provided with a recess in at least one of the following locations: between the lower surface of the conductive member and the protruding portion, and between the main body portion and the side surface of the main body portion. The insulating heat conductive member has a first portion along the lower surface of the conductive member, a second portion along the side surface of the protruding portion, and a bent portion located between the first portion and the second portion. The recess is formed at a position opposite to the bent portion, The recess forms a space that avoids contact between the conductive member and the bent portion, in a semiconductor device.

2. In the semiconductor device described in claim 1, The signal terminal has a first region sealed in the sealing resin and a second region extending to the outside of the sealing resin. A semiconductor device in which the first region has a low-rigidity portion that is less rigid than the rest of the first region.

3. In the semiconductor device described in claim 1, The insulating thermal conductive member is located within the range of the conductive member when viewed from the direction in which the protrusion protrudes, in a semiconductor device.

4. In the semiconductor device described in claim 2, The conductive member has a main terminal portion that extends to the outside of the sealing resin, The main terminal portion is arranged on the same plane as the second region in a semiconductor device.

5. In the semiconductor device described in claim 1, The recess is formed symmetrically with respect to the protrusion in the semiconductor device.

6. In the semiconductor device described in claim 1, The recess extends in a direction perpendicular to the extension direction of the signal terminal, and is a semiconductor device.

7. In the semiconductor device described in claim 1, The main body portion has a protrusion toward the signal electrode, The aforementioned protrusion is provided with a slope that extends from the signal electrode to the main body, in a semiconductor device.

8. In the semiconductor device described in claim 1, A semiconductor device wherein the side surface of the main body is inclined so as to move closer to the main electrode from the main body.

9. In the semiconductor device described in claim 1, A semiconductor device in which the angle of the side surface of the main body with respect to the main body is 135 degrees or more.

10. A power conversion device comprising a semiconductor device as described in claim 1 and a main conversion circuit that converts and outputs input power.

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