Processing apparatus, processing method, substrate manufacturing method, semiconductor package manufacturing method, and wiring manufacturing method

Abstract

To provide a processing apparatus capable of accurately performing fine concavo-convex processing over a region to be processed of a substrate.SOLUTION: A processing apparatus for forming concavities and convexities on a surface of a substrate by an ablation processing using a laser beam includes: a first optical function part including a molding optical system for molding an irradiation shape of the laser beam from a laser light source into a rectangular shape; a second optical function part including a mask including an effective area having a pattern; and a substrate stage for holding the substrate. The mask includes a mask irradiation area which is a part of the effective area of the mask and to which the laser beam having passed through the first optical function part is irradiated. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam having passed through the mask. The substrate irradiation area is smaller than the processing target area of the substrate, and the mask and the substrate stage are swept and irradiated while overlapping a part of the substrate irradiation area during the processing operation on the substrate to perform a surface roughness processing of the processing target area of the substrate.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a processing apparatus, a processing method, and a method for manufacturing a substrate.

Background Art

[0002] Following the trend of "More Than More", the development of semiconductor package substrates has shifted toward SoC (System on a Chip), which integrates an entire system into a single chip, and semiconductor package substrates have been actively developed in line with this trend.

[0003] In addition, the structure of semiconductor package substrates has become increasingly complex and high-density, and apparatuses using excimer lasers have been applied to the manufacture of their base substrates.

[0004] Along with the higher density of semiconductor package substrates, the wiring of semiconductor package substrates is also required to be high-definition, and the wiring has also become multi-layered. Such thinning and multilayering of wiring has made line and space (L&S) narrower and more complex. As the wiring width decreases, wiring resistance tends to increase.

[0005] In order to provide through holes (VIA) for connection between multilayer wirings, and to solve the problem of increased wiring resistance, in the manufacture of semiconductor package substrates, trenches are provided on the substrate, and wirings are formed along these trenches. By forming such wiring, the cross-sectional area of the wiring can be increased, so an increase in wiring resistance can be suppressed.

[0006] An example of such a processing method for a semiconductor package substrate will be described below. First, a build-up film is laminated on both sides of an inner-layer substrate (core layer) using a glass epoxy resin material using a dedicated vacuum laminator. Processing is performed to provide the aforementioned through holes and trenches on the surface of the build-up film thus obtained, and then a metal layer is formed thereon by plating to form electrodes.

[0007] Now, in order to meet the demand for even higher density, the required diameter of through holes is becoming smaller. Furthermore, there is a need to form cylindrical through holes (cylindrical vias) with a small difference between the top and bottom diameters. Similarly, cylindrical trenches are also required.

[0008] To process a substrate as straight as possible and form cylindrical holes and trenches with high precision, it is effective to use a laser beam with high resolution and high energy density. For such processing, it is preferable to use an excimer laser rather than a solid-state laser. Although excimer lasers have a shallow depth of field, using this laser allows for processing with high resolution and high energy density, enabling the formation of cylindrical vias and trenches in precise positions without blurring.

[0009] Patent Document 1 describes an invention relating to a laser drilling method and apparatus. For example, claim 1 of Patent Document 1 describes irradiating a processing area of ​​a substrate to be processed with a linear or rectangular beam through a contact mask using the contact mask method, and scanning the linear or rectangular beam with respect to the contact mask.

[0010] Furthermore, paragraph 0037 of Patent Document 1 describes oscillating a laser oscillator and moving a linear beam in the L-axis direction using a scanning mechanism to irradiate the entire pattern area of ​​the contact mask. However, this method cannot be used to process substrates with large surface areas that require deep irregularities.

[0011] Furthermore, paragraphs 0049 and 0050 of Patent Document 1 describe a method in which a rectangular beam is moved using a two-axis scanning mechanism and sequentially irradiated with the rectangular beam onto each of the four divided regions of a contact mask, thereby drilling holes in the processing region directly below each region. However, with this method, although the inside of each processing region can be processed to a uniform depth, processing is not performed at the interfaces between the processing regions, or over-processing occurs at the interfaces to about twice the processing depth inside each processing area, resulting in problems with processing quality.

[0012] Patent Document 2 describes an invention relating to a processing apparatus and processing method for ablation processing. The ablation processing apparatus according to claim 1 of Patent Document 2 includes a scanning mechanism that moves a line beam forming unit, which encloses a line beam forming optical system, relative to the apparatus body and scans a line of light.

[0013] Regarding this scanning mechanism, paragraph 0022 of Patent Document 2 states: "The scanning mechanism 60 is capable of moving the line beam forming unit 20 back and forth along the scanning direction (X direction), and as the line beam forming unit 20 moves, a line of light perpendicular to the scanning direction (X direction) moves relative to the mask M and the projection optical system 30, and the mask M and substrate W fixed to the mask stage 40 and processing stage 50, respectively, are scanned."

[0014] Furthermore, paragraph 0026 of Patent Document 2 states that "the processing stage 50 can fix the substrate W by vacuum suction or the like, and can position the substrate W relative to the mask M by moving and rotating in the XY direction. It is also step-movable along the scanning direction (in this case, the X direction) so that ablation processing can be performed over the entire substrate W."

[0015] Furthermore, paragraph 0033 of Patent Document 2 describes "scanning a line of light by moving the line beam forming unit 20 relative to the main body 15 of the apparatus."

[0016] The invention described in Patent Document 2 cannot perform processing that requires deep irregularities on a large surface area substrate. Furthermore, because the laser beam is moved during scanning, it is difficult to irradiate the entire area of ​​a large mask. Therefore, it becomes difficult to handle when the surface area to be irradiated on the substrate is large. In addition, the optical elements after the mask need to be large in size, so distortion is likely to occur and it is not suitable for high-precision processing. If a reduction optical lens is used, a very large-diameter lens must be applied, which not only increases distortion but also makes the component very expensive, and it is difficult to manage the heat generated by the laser beam, resulting in poor processing accuracy during long-term operation. [Prior art documents] [Patent Documents]

[0017] [Patent Document 1] Japanese Patent Publication No. 2001-79678 [Patent Document 2] Japanese Patent Publication No. 2021-49560 [Overview of the project] [Problems that the invention aims to solve]

[0018] One example of surface texture processing for semiconductor substrates is to irradiate the substrate with a laser beam passed through an aperture pattern of a mask, thereby creating surface texture through ablation. Ablation allows for not only through-holes but also near-miss processing, which creates trenches with a high aspect ratio without penetrating the entire surface.

[0019] Ideally, a laser beam with uniform energy should be irradiated over an area that covers the entire effective area of ​​the mask. However, in recent years, the processing area of ​​semiconductor substrates has been increasing, and consequently, the effective area of ​​the mask has also been enlarged.

[0020] Therefore, if a uniform laser beam is irradiated onto an area covering all of said regions, the energy density of the laser beam is extremely reduced, failing to reach the processing threshold energy of the substrate surface, and processing cannot be performed. In order to process the substrate surface, it is necessary to irradiate a laser beam with a certain level of energy density. Furthermore, in order to perform processing of a straight cylindrical shape with a high aspect ratio (straight cylindrical VIA, straight cylindrical trench), if the energy density of the laser is not high, the wall surface will become blunt.

[0021] In addition, the laser beam energy for ablation processing requires a much higher energy density than, for example, an exposure apparatus, so consideration for heat is required.

[0022] In addition, even if an energy density that enables ablation processing is provided, a single irradiation of the laser beam cannot achieve the target processing depth, and multiple irradiations are required. Particularly in recent years, requirements for the aspect ratio of processing have been increasing, and there is a demand for deeper uneven processing, so it is necessary to perform deep ablation processing by irradiating the same position on the substrate with the laser beam multiple times.

[0023] Conventionally, for example, ablation processing apparatuses and ablation processing methods as described in Patent Documents 1 and 2 have been proposed, but as described above, these are not technologies that can accurately perform fine uneven processing over the entire processing region of a substrate.

[0024] The present invention has been made to solve the above problems, and an object of the present invention is to provide a processing apparatus capable of accurately performing fine uneven processing over a processing region of a substrate, a processing method capable of accurately performing fine uneven processing over a processing region of a substrate, and a substrate manufacturing method capable of manufacturing a substrate on which fine uneven processing is accurately formed over a processing region of the substrate. Means for Solving the Problems

[0025] In order to solve the above problem, according to the present invention, there is provided a processing apparatus according to a first aspect, which is a processing apparatus for forming fine irregularities on a surface of a substrate by ablation processing using irradiation energy of a laser beam, a first optical functional section including a laser light source that irradiates the laser beam in a pulsed manner, and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape, a second optical functional section including a mask having an effective area with a pattern corresponding to a region to be processed of the substrate, and a substrate stage that holds the substrate, wherein the mask includes a mask irradiation area irradiated with the laser beam that has passed through the first optical functional section, and the mask irradiation area is a part of the effective area of the mask, the substrate includes a substrate irradiation area onto which the pattern is projected by the laser beam that has passed through the mask, the substrate irradiation area is smaller than the region to be processed of the substrate, and the processing apparatus is configured such that during a processing operation on the substrate, the mask and the substrate stage are swept for irradiation while superimposing a part of the substrate irradiation area, so as to perform surface irregularity processing on the region to be processed of the substrate.

[0026] With such a processing apparatus, substantially uniform irregularity processing can be accurately performed over the entire region to be processed of the substrate. Therefore, with the processing apparatus of this aspect, fine irregularity processing can be accurately performed over the entire region to be processed of the substrate.

[0027] In addition, such a processing apparatus does not need to use high laser energy, can be configured at low cost without using expensive laser light sources and optical members, and can suppress deterioration of accuracy caused by thermal drift of the laser beam, thereby enabling high-precision processing.

[0028] Furthermore, such processing equipment can perform high-speed, deep via and / or trench machining. Additionally, because the substrate irradiation area per shot can be reduced, high-density irradiation becomes possible.

[0029] Furthermore, the present invention relates to a processing apparatus in a second embodiment that forms fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, A first optical function unit comprising a laser light source that irradiates the laser beam in a pulsed manner, and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape, A second optical function unit comprising a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, A substrate stage for holding the aforementioned substrate, Includes, The mask includes a mask irradiation area to which the laser beam that has passed through the first optical function unit is irradiated, and the mask irradiation area is a part of the effective area of ​​the mask. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam that has passed through the mask, The substrate irradiation area is smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are configured to maintain a relative corresponding positional relationship by operating synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated. The present invention provides a processing apparatus configured to perform surface roughening of the workpiece area of ​​the substrate by synchronously operating the mask and the substrate stage while fixing the irradiation position of the laser beam during the processing operation on the substrate, thereby sweeping and irradiating the mask and the substrate stage.

[0030] With such a processing apparatus, it is possible to accurately create nearly uniform unevenness across the entire workpiece area of ​​the substrate. Therefore, with this type of processing apparatus, it is possible to accurately create fine unevenness across the entire workpiece area of ​​the substrate.

[0031] Furthermore, such processing equipment does not require high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It also suppresses the deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing. Additionally, because small optical components can be used, inexpensive and highly accurate components can be employed.

[0032] Furthermore, such processing equipment can perform processing with higher precision than when scanning a laser beam. Additionally, because such processing equipment can utilize large-area masks, it can perform processing at higher energy densities.

[0033] The processing apparatus of the first embodiment is configured such that the mask and the substrate stage operate synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. Preferably, during the processing operation on the substrate, the laser beam irradiation position is fixed, and the mask and the substrate stage are operated in synchronously to sweep and irradiate the mask and the substrate stage while superimposing a portion of the substrate irradiation area, thereby performing surface roughening of the workpiece area of ​​the substrate.

[0034] Such processing equipment can perform processing with higher precision than when scanning a laser beam. Furthermore, because such equipment can utilize large-area masks, it can also perform processing at higher energy densities.

[0035] The laser beam is preferably an excimer laser.

[0036] Using an excimer laser enables more precise surface texture processing. Furthermore, because excimer lasers have high energy absorption efficiency for the processing material, they allow for excellent ablation processing.

[0037] Preferably, the system further includes a mask stage for holding and sweeping the mask.

[0038] With a processing apparatus that includes such a mask stage, the mask sweeping operation can be performed efficiently.

[0039] Preferably, a third optical function unit equipped with a reduction projection optical system is further included between the second optical function unit and the substrate stage.

[0040] By further incorporating such a third optical function, the mask can be enlarged beyond the actual processing pattern, and the energy of the laser beam irradiated onto the mask can be reduced to less than the processing energy irradiated onto the substrate. This suppresses thermal drift caused by the laser beam energy, thereby reducing thermal expansion of the mask and enabling high-precision processing even after long processing operations. In addition, because the mask can be made larger than the actual processing pattern, it becomes less susceptible to the effects of minute dust particles.

[0041] Preferably, the third optical functional unit further includes a cooling means for cooling the reduction projection optical system.

[0042] With this type of processing equipment, thermal drift caused by the laser beam energy can be further suppressed, making it possible to perform high-precision processing even after long processing times.

[0043] Preferably, the shaping optical system comprises a plurality of cylindrical lenses and is an optical system that shapes the laser beam from the laser light source into a laser beam whose irradiation shape is the rectangular shape and whose irradiation energy density is uniform.

[0044] Processing equipment incorporating such optical systems can shape high-quality laser beams with a rectangular beam profile that exhibits extremely uniform energy density.

[0045] Preferably, the shaping optical system comprises a plurality of cylindrical lenses and is an optical system that shapes the laser beam from the laser light source into a laser beam whose irradiation shape is rectangular and top-hat shaped.

[0046] Processing equipment including such an optical system can irradiate the workpiece area of ​​the substrate with a top-hat shaped laser beam, which has an extremely uniform energy density and a rectangular shape.

[0047] The second optical function unit can further shape the irradiation shape of the laser beam that has passed through the first optical function unit by passing it through the mask.

[0048] The second optical function unit can further shape the irradiation shape of the rectangularly formed laser beam, for example, according to a pattern corresponding to the area to be processed on the substrate.

[0049] Preferably, in the sweep irradiation in at least one direction, the mask and the substrate stage are swept continuously while the laser beam is pulsed onto them.

[0050] By performing this type of sweeping, it is possible to significantly reduce the sweeping time compared to a step-and-repeat operation that involves repeatedly moving and stopping.

[0051] Furthermore, because it does not frequently repeat stage movement and stopping like step-and-repeat, it suppresses the thermal load on the stage and allows for high-precision positioning to be maintained over a long period of time.

[0052] An imaging means for reading characteristic portions of the substrate, An imaging means for reading the characteristic portion of the mask, An alignment mechanism that aligns the relative positions of the substrate and the mask based on the positional information of the feature portion of the substrate and the feature portion of the mask. Preferably, it further includes.

[0053] By incorporating these imaging means and alignment mechanisms, it becomes possible to perform surface texture processing by projecting a mask pattern onto the substrate surface at an accurate position.

[0054] In this case, it is preferable to further include means for correcting the processed shape of the substrate with respect to the pattern of the mask based on information from the alignment mechanism.

[0055] Such processing equipment makes it possible to create more precise textures and irregularities on substrates.

[0056] It is preferable that the mask is installed in a direction substantially perpendicular to the horizontal plane on which the processing apparatus is installed.

[0057] With this type of processing apparatus, compared to conventional methods where the mask is placed on a horizontal surface, the effects of mask deflection are suppressed, enabling highly precise surface processing. Furthermore, dust is less likely to adhere to the mask surface, thus reducing defects caused by dust. In addition, since most of the long optical path can be aligned along the horizontal plane, the height of the apparatus can be reduced.

[0058] Furthermore, in the present invention, as a processing method in the first embodiment, there is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The present invention provides a processing method for performing surface roughening of the workpiece area of ​​the substrate by sweeping and irradiating the mask and the substrate stage while superimposing a portion of the substrate irradiation area during the processing operation on the substrate.

[0059] With this processing method, it is possible to accurately create nearly uniform unevenness across the entire workpiece area of ​​the substrate. Therefore, with this type of processing method, it is possible to accurately create fine unevenness across the entire workpiece area of ​​the substrate.

[0060] Furthermore, this processing method does not require the use of high laser energy, and the laser light source and optical components used can be inexpensively constructed without using expensive materials. In addition, it can suppress the deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing.

[0061] Furthermore, this processing method allows for high-speed, deep via and / or trench processing. Additionally, because the substrate irradiation area per shot can be reduced, high-density irradiation becomes possible.

[0062] Furthermore, in the present invention, as a processing method in a second aspect, there is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. The present invention provides a processing method for performing surface roughening of the workpiece area of ​​a substrate while superimposing a portion of the substrate irradiation area during the processing operation on the substrate.

[0063] With this processing method, it is possible to accurately create nearly uniform unevenness across the entire workpiece area of ​​the substrate. Therefore, with this type of processing apparatus, it is possible to accurately create fine unevenness across the entire workpiece area of ​​the substrate.

[0064] Furthermore, in the present invention, as a processing method in a third aspect, there is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. The present invention provides a processing method for performing surface roughening of the workpiece area of ​​the substrate by operating the mask and the substrate stage in synchronous motion while fixing the irradiation position of the laser beam during the processing operation on the substrate, thereby sweeping and irradiating the mask and the substrate stage.

[0065] With this processing method, it is possible to accurately create nearly uniform unevenness across the entire workpiece area of ​​the substrate. Therefore, with this type of processing method, it is possible to accurately create fine unevenness across the entire workpiece area of ​​the substrate.

[0066] Furthermore, this processing method does not require the use of high laser energy, and the laser light source and optical components used can be inexpensively constructed without the need for expensive materials. It also suppresses the deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing. Additionally, because small optical components can be used, inexpensive and highly accurate components can be employed.

[0067] Furthermore, this processing method allows for processing with higher precision than scanning with a laser beam. Additionally, this method enables the use of large-area masks, allowing for processing at higher energy densities.

[0068] In the processing method of the first embodiment, the mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. During the processing operation on the substrate, it is preferable to operate the mask and the substrate stage in synchronous motion while fixing the irradiation position of the laser beam, and to sweep the mask and the substrate stage while superimposing a portion of the substrate irradiation area, thereby performing surface roughening of the workpiece area of ​​the substrate.

[0069] This processing method allows for higher precision than scanning with a laser beam. Furthermore, because this method allows for the use of large-area masks, it is possible to perform processing at higher energy densities.

[0070] It is preferable to use an excimer laser as the laser beam.

[0071] Using an excimer laser enables more precise surface texture processing. Furthermore, because excimer lasers have high energy absorption efficiency for the processing material, they allow for excellent ablation processing.

[0072] In the processing method of the first or third embodiment, it is preferable to further use a mask stage that holds the mask and sweeps the mask.

[0073] This method allows for efficient mask sweeping.

[0074] In the processing method of the first or third embodiment, it is preferable to use a processing apparatus that further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

[0075] By using a processing apparatus that further includes such a third optical function unit, the mask can be enlarged beyond the actual processing pattern, and as a result, the energy of the laser beam irradiated onto the mask can be made smaller than the processing energy irradiated onto the substrate. This suppresses thermal drift caused by the laser beam energy, thereby reducing thermal expansion of the mask and enabling high-precision processing even after long processing operations. In addition, because the mask can be made into a pattern larger than the actual processing pattern, it becomes less susceptible to the effects of minute dust particles.

[0076] In this case, it is preferable to use a third optical functional unit that further includes a cooling means for cooling the reduction projection optical system.

[0077] By using such a third optical function unit, it becomes possible to perform high-precision machining even after prolonged machining operations.

[0078] In the processing method of the first or third embodiment, it is preferable to use an optical system comprising a plurality of cylindrical lenses as the forming optical system, and to form the laser beam from the laser light source into a uniform laser beam whose irradiation shape is the rectangular shape.

[0079] This method makes it possible to create a high-quality laser beam with a rectangular beam profile that has an extremely uniform energy density.

[0080] In the processing method of the first or third embodiment, the irradiation shape of the laser beam that has passed through the first optical function can be further formed in the second optical function through the mask.

[0081] The second optical function unit can further shape the irradiation shape of the rectangularly formed laser beam, for example, according to a pattern corresponding to the area to be processed on the substrate.

[0082] In the processing method of the first or third embodiment, it is preferable to sweep the mask and the substrate stage without stopping while pulsed irradiating the mask and the substrate stage with the laser beam in at least one direction during the sweep irradiation.

[0083] By performing this type of sweeping, it is possible to significantly reduce the sweeping time compared to a step-and-repeat operation that involves repeatedly moving and stopping.

[0084] Furthermore, because it does not frequently repeat stage movement and stopping like step-and-repeat, it suppresses the thermal load on the stage and allows for high-precision positioning to be maintained over a long period of time.

[0085] In the processing method according to the first or third embodiment, the sweep irradiation can be repeated multiple times for each area of ​​the substrate to be processed.

[0086] By repeatedly applying sweep irradiation to each workpiece area in this manner and machining to the desired depth, high-speed machining can be achieved.

[0087] In the processing method of the first or third embodiment, the characteristic portion of the substrate and the characteristic portion of the mask are read, Based on the positional information of the feature portion of the substrate and the feature portion of the mask, the relative positions of the substrate and the mask are aligned using an alignment mechanism. Preferably, it further includes.

[0088] This method makes it possible to perform embossing by projecting a mask pattern onto the substrate surface at a precise location.

[0089] In this case, it is preferable to further include correcting the processed shape of the substrate with respect to the pattern of the mask based on the information from the alignment mechanism.

[0090] This processing method allows for more precise embossing and undulation of the substrate.

[0091] In the processing method of the first or third embodiment, it is preferable to use a processing apparatus in which the mask is installed perpendicular to the horizontal plane on which the processing apparatus is installed.

[0092] Using this type of processing device, compared to conventional methods where the mask is placed on a horizontal surface, the effects of mask deflection are suppressed, enabling highly precise surface processing. Furthermore, dust is less likely to adhere to the mask surface, thus reducing defects caused by dust. In addition, since most of the long optical path can be aligned along the horizontal plane, the height of the device can be reduced.

[0093] Furthermore, in the present invention, as a method for manufacturing a substrate according to the first embodiment, a method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The present invention provides a method for manufacturing a substrate, in which, during the processing operation on the substrate, the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the processed area of ​​the substrate.

[0094] With this method of manufacturing a substrate, it is possible to accurately create nearly uniform surface irregularities across the entire work area of ​​the substrate. Therefore, this method of manufacturing a substrate makes it possible to manufacture a substrate in which fine surface irregularities are accurately formed across the entire work area.

[0095] Furthermore, this method of manufacturing substrates does not require the use of high laser energy, and the laser light source and optical components used can be inexpensively constructed without the need for expensive materials. In addition, it can suppress the deterioration of accuracy due to thermal drift of the laser beam, and thus enable the manufacture of substrates with high precision.

[0096] Furthermore, this substrate manufacturing method allows for high-speed, deep via and / or trench processing. Additionally, because the substrate irradiation area per shot can be reduced, high-density irradiation becomes possible.

[0097] Furthermore, in the present invention, as a method for manufacturing a substrate according to a second embodiment, a method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. The present invention provides a method for manufacturing a substrate, which performs surface roughening of the workpiece area of ​​the substrate while superimposing a portion of the substrate irradiation area during the processing operation on the substrate.

[0098] With this method of manufacturing a substrate, it is possible to accurately create nearly uniform surface irregularities across the entire work area of ​​the substrate. Therefore, this method of manufacturing a substrate makes it possible to manufacture a substrate in which fine surface irregularities are accurately formed across the entire work area.

[0099] Furthermore, in the present invention, as a third embodiment of the method for manufacturing a substrate, a method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. The present invention provides a method for manufacturing a substrate, in which, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronously to sweep and irradiate the mask and the substrate stage, thereby performing surface unevenness processing on the workpiece area of ​​the substrate.

[0100] With this method of manufacturing a substrate, it is possible to accurately create nearly uniform surface irregularities across the entire work area of ​​the substrate. Therefore, this method of manufacturing a substrate makes it possible to manufacture a substrate in which fine surface irregularities are accurately formed across the entire work area.

[0101] Furthermore, this method of manufacturing substrates does not require the use of high laser energy, and the laser light source and optical components used can be inexpensively constructed without the need for expensive materials. It also suppresses the deterioration of accuracy due to thermal drift of the laser beam, enabling the manufacture of highly precisely processed substrates. Additionally, because small optical components can be used, inexpensive and highly accurate components can be employed.

[0102] Furthermore, this method of manufacturing substrates allows for processing with higher precision than scanning with a laser beam. Additionally, this processing method enables the use of large-area masks, allowing for processing at higher energy densities.

[0103] For example, the substrate may be a substrate for semiconductor packaging.

[0104] The substrate manufacturing method of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages. [Effects of the Invention]

[0105] As described above, the processing apparatus of the present invention can accurately perform fine surface texture processing across the entire workpiece area of ​​a substrate.

[0106] Furthermore, the processing method of the present invention allows for precise and accurate processing of fine irregularities across the entire workpiece area of ​​the substrate.

[0107] Furthermore, with the substrate manufacturing method of the present invention, it is possible to manufacture a substrate in which fine irregularities are formed with high precision across the processed area of ​​the substrate. [Brief explanation of the drawing]

[0108] [Figure 1] This is a schematic diagram showing an example of the processing apparatus of the present invention. [Figure 2] This figure shows an example of the relationship between the processing area of ​​the substrate and the substrate irradiation area in the present invention. [Figure 3] This figure illustrates an example of superimposed irradiation in a single axis direction. [Figure 4] This diagram illustrates an example of superimposed irradiation from the first to the third row. [Figure 5] This is a conceptual diagram of the shaping of the laser beam irradiation shape in an example of a shaping optical system. [Modes for carrying out the invention]

[0109] As mentioned above, there was a need for the development of a processing device that could accurately create fine irregularities across the entire workpiece area of ​​a substrate.

[0110] As a result of diligent research into the above-mentioned problems, the inventors have found that in a process of forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, the substrate irradiation area irradiated with the laser beam in one shot is made smaller than the work area of ​​the substrate, and during the processing operation on the substrate, the mask and substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area to perform surface irregularity processing of the work area of ​​the substrate, and / or the mask and substrate stage are operated in synchronously with the irradiation position of the laser beam fixed, and the mask and substrate stage are swept and irradiated to perform surface irregularity processing of the work area of ​​the substrate, thereby enabling high-precision fine irregularity processing across the work area of ​​the substrate, and thus the present invention has been completed.

[0111] That is, the processing apparatus according to the first aspect of the present invention is a processing apparatus that forms fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, A first optical function unit comprising a laser light source that irradiates the laser beam in a pulsed manner, and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape, A second optical function unit comprising a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, A substrate stage for holding the aforementioned substrate, Includes, The mask includes a mask irradiation area to which the laser beam that has passed through the first optical function unit is irradiated, and the mask irradiation area is a part of the effective area of ​​the mask. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam that has passed through the mask, The substrate irradiation area is smaller than the workpiece area of ​​the substrate. This processing apparatus is configured to perform surface roughening of the workpiece area of ​​the substrate by sweeping and irradiating the mask and the substrate stage while superimposing a portion of the substrate irradiation area during the processing operation on the substrate.

[0112] Furthermore, a processing apparatus according to a second aspect of the present invention is a processing apparatus that forms fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, A first optical function unit comprising a laser light source that irradiates the laser beam in a pulsed manner, and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape, A second optical function unit comprising a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, A substrate stage for holding the aforementioned substrate, Includes, The mask includes a mask irradiation area to which the laser beam that has passed through the first optical function unit is irradiated, and the mask irradiation area is a part of the effective area of ​​the mask. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam that has passed through the mask, The substrate irradiation area is smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are configured to maintain a relative corresponding positional relationship by operating synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated. This processing apparatus is configured to perform surface roughening of the workpiece area on the substrate by operating the mask and the substrate stage in synchronous motion while fixing the irradiation position of the laser beam during the processing operation on the substrate, thereby sweeping and irradiating the mask and the substrate stage.

[0113] Furthermore, the processing method according to the first aspect of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. This is a processing method in which, during the processing operation on the substrate, the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby processing the surface irregularities of the area to be processed on the substrate.

[0114] Furthermore, a processing method according to a second aspect of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. This is a processing method in which, during the processing operation on the substrate, a portion of the irradiation area of ​​the substrate is superimposed, and the surface irregularities of the area to be processed on the substrate are processed.

[0115] Furthermore, a processing method according to a third aspect of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. This is a processing method in which, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronously to sweep and irradiate the mask and the substrate stage, thereby processing the surface irregularities of the area to be processed on the substrate.

[0116] Furthermore, the first embodiment of the present invention is a method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. This is a method for manufacturing a substrate, in which, during the processing operation on the substrate, the mask and the substrate stage are swept and irradiated while overlapping a portion of the substrate irradiation area, thereby performing surface unevenness processing on the area of ​​the substrate to be processed.

[0117] Furthermore, a method for manufacturing a substrate according to a second aspect of the present invention is a method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. This is a method for manufacturing a substrate, in which, during the processing operation on the substrate, a portion of the irradiation area of ​​the substrate is superimposed, and the surface irregularities of the area to be processed on the substrate are processed.

[0118] Furthermore, a third aspect of the present invention is a method for manufacturing a substrate in which fine irregularities are formed on the surface by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. This is a method for manufacturing a substrate, in which, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronously to sweep the mask and the substrate stage with irradiation, thereby performing surface unevenness processing on the workpiece area of ​​the substrate.

[0119] The present invention will be described in detail below, but the present invention is not limited to these descriptions.

[0120] [Processing equipment] Figure 1 is a schematic diagram showing an example of the processing apparatus of the present invention. The processing apparatus 100 shown in Figure 1 is a processing apparatus that forms fine irregularities on the surface of a substrate 80 by ablation processing using the irradiation energy of a laser beam 4.

[0121] The processing apparatus 100 shown in Figure 1 includes a first optical function unit 10, a second optical function unit 20, and a substrate stage 40 for holding the substrate 80.

[0122] The first optical function unit 10 includes a laser light source (laser oscillator) 11 that irradiates (emits) a laser beam 1 in a pulsed manner, and a shaping optical system 12 that receives the laser beam 1 from the laser light source 11. The shaping optical system 12 shapes the irradiation shape of the laser beam 1, for example, shown in Figure 1(a), into a rectangular irradiation shape, for example, shown in Figure 1(b). A laser beam 2 having a rectangular irradiation shape can exhibit a uniform irradiation energy density, and its beam profile exhibits a top-hat shape, for example.

[0123] The second optical function unit 20 includes a mask 21. The mask 21 includes an effective area 22 having a pattern corresponding to the area to be processed on the substrate 80.

[0124] The mask 21 includes a mask irradiation area to which the laser beam 2 that has passed through the first optical function unit 10 is irradiated. This mask irradiation area is a part of the effective area 22 of the mask 21.

[0125] The laser beam 3, passing through the second optical function unit 20 and having, for example, the irradiation shape shown in Figure 1(c), has its direction of travel changed by an arbitrary folding mirror 50 as shown in Figure 1(d), and is incident on an arbitrary third optical function unit 30 (described later). The processing apparatus 100 shown in Figure 1 is configured so that the laser beam 4 emitted from the third optical function unit 30 irradiates a portion of the substrate 80 held on the substrate stage 40.

[0126] The substrate 80 includes a substrate irradiation area on which a pattern is projected by a laser beam that has passed through the mask 21 (and an optional third optical functional unit 30).

[0127] Figure 2 shows an example of the relationship between the substrate irradiation area 90, to which the laser beam 4 of the substrate 80 is irradiated, and the workpiece area 81 of the substrate 80. As shown in Figure 2, the substrate irradiation area 90 is smaller than the workpiece area 81 of the substrate 80.

[0128] The substrate irradiation area 90 shown in Figure 2 is the irradiation area of ​​a single pulsed laser beam 4. Furthermore, since the pattern is projected onto the substrate irradiation area 90 by the laser beam passing through the mask 21, it corresponds to the mask irradiation area, which is a part of the effective area 22 of the mask 21.

[0129] In the example shown in Figure 1, the mask 21 is configured to be scanned (swept) along the sweep axes 21X and 21Y shown in Figure 1. The substrate stage 40 is also configured to be scanned along the sweep axes 80X and 80Y shown in Figure 1.

[0130] Furthermore, the processing apparatus 100 of the present invention is configured to sweep and irradiate the mask 21 and the substrate stage 40 with a laser beam 4 to perform surface unevenness processing on the workpiece area 81 of the substrate 80.

[0131] Furthermore, the processing apparatus 100 of the present invention is configured to perform superimposed irradiation (first embodiment), as described in detail below, and / or to perform synchronous sweep irradiation with the irradiation position of the laser beam fixed (second embodiment).

[0132] [First aspect] The processing apparatus 100 of the first embodiment is configured to perform surface roughening of the work area 81 of the substrate 80 by sweeping and irradiating the mask 20 and the substrate stage 80 while superimposing a portion of the substrate irradiation area 90 during the processing operation on the substrate 80. Hereinafter, the irradiation of the laser beam while superimposing a portion of the substrate irradiation area 90 will be referred to as superimposed irradiation.

[0133] Next, we will explain an example of superimposed irradiation with reference to Figures 3 and 4.

[0134] Figure 3(a) shows the substrate irradiation area 90 on the substrate 80 by a pulsed, single-shot laser beam. In this example of superimposed irradiation, the mask 20 and the substrate stage 80 are swept, and the laser beam is irradiated so that the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot partially overlap in the direction of the arrow along the sweep axis 80X, as shown in Figure 3(b). Subsequently, the laser beam is irradiated so that the substrate irradiation area 93 of the third shot partially overlaps with the substrate irradiation area 91 of the first shot and the substrate irradiation area 92 of the second shot. By repeating this superimposed irradiation from the fourth shot onward, the processing area expands along the sweep axis 80X.

[0135] Figure 4(a) shows the process of ablation processing the first row of the workpiece area 81 along the sweep axis 80X by superimposed irradiation as shown in Figure 3(b). Next, as shown in Figure 4(b), superimposed irradiation is performed along the sweep axis 80X so as to overlap with a portion of the area superimposed irradiation in Figure 4(a) in the direction of the sweep axis 80Y (perpendicular to the sweep axis 80X), and the second row of the workpiece area 81 is ablated along the sweep axis 80X. Next, as shown in Figure 4(c), superimposed irradiation is performed along the sweep axis 80X so as to overlap with a portion of the area superimposed irradiation in Figures 4(a) and (b) in the direction of the sweep axis 80Y, and the third row of the workpiece area 81 is ablated along the sweep axis 80X. By repeating this superimposed irradiation for the fourth row and beyond of the workpiece area 81, the processed area expands to cover the entire workpiece area 81. As a result, superimposed irradiation can be performed at regular intervals in two directions, the sweep axis 80X and 80Y.

[0136] The overlapping areas of the substrate irradiation area receive multiple laser beam irradiations. As a result, these areas undergo deep ablation processing according to the pattern shape of the mask, enabling the processing to achieve the desired depth according to the mask pattern shape required for the workpiece area 81.

[0137] In this first embodiment of the processing apparatus 100, a laser beam 4, which is pulsed and rectangular with a uniform irradiation energy density and converted into a processing shape through a mask 21, is irradiated onto the substrate irradiation area 90 of the substrate 80. Therefore, the processing depth of the substrate irradiation area 90 within the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, can be made uniform and multiple irradiations can be performed, making it possible to accurately perform nearly uniform uneven processing over the work area 81 of the substrate 80. Therefore, with this processing apparatus 100, fine uneven processing can be performed accurately over the work area 81 of the substrate 80.

[0138] Furthermore, such a processing device 100 does not require the use of high laser energy, can be constructed inexpensively without using expensive laser light sources or optical components, and can suppress the deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing.

[0139] Furthermore, since the processing device 100 can irradiate the substrate with the laser beam 4 in a pulsed manner, the superimposed irradiation can be performed at high speed.

[0140] In other words, the processing apparatus 100 according to the first aspect of the present invention can perform high-speed, deep via machining and / or trench machining.

[0141] Furthermore, with the processing apparatus 100 of the first embodiment of the present invention, since overlapping irradiation is performed, the substrate irradiation area in a single shot can be reduced. As a result, high-density irradiation becomes possible.

[0142] [Second aspect] In the processing apparatus 100 of the second embodiment, the mask 21 and the substrate stage 40 are configured to maintain a relative corresponding positional relationship by operating synchronously in a planar direction substantially perpendicular to the direction in which the laser beams 2 and 4 are irradiated.

[0143] In the example shown in Figure 1, the operation of the mask 21 along the sweep axis 21X is synchronized with the operation of the substrate stage 80 along the sweep axis 80X, and the operation of the mask 21 along the sweep axis 21Y is synchronized with the operation of the substrate stage 80 along the sweep axis 80Y, and the mask 21 and the substrate stage 40 are configured to maintain a relative positional relationship.

[0144] Furthermore, the processing apparatus 100 of the second embodiment is configured to perform surface roughening of the processing area 81 of the substrate 80 by operating the mask 21 and the substrate stage 40 in synchronous motion while fixing the irradiation position of the laser beam 4 during processing operations on the substrate 80, thereby sweeping and irradiating the mask 21 and the substrate stage 40. Such sweeping irradiation that can be performed by the processing apparatus 100 of the second embodiment will be hereinafter referred to as "synchronous sweeping irradiation with the irradiation position of the laser beam fixed".

[0145] This type of synchronized sweep irradiation allows for processing with higher precision than scanning the laser beam. Furthermore, with such a processing apparatus 100, a large-area mask can be used as the mask 21, and by using the large-area mask in combination with the third optical function unit 30, which will be described later, processing can be performed at an even higher energy density.

[0146] Furthermore, in this second embodiment of the processing apparatus 100, similar to the first embodiment of the processing apparatus 100, a laser beam 4, which is a pulsed and rectangular laser beam with a uniform irradiation energy density, is converted into a processing shape through the mask 21 and irradiated onto the substrate irradiation area 90 of the substrate 80. Therefore, in the second embodiment of the processing apparatus 100, similar to the first embodiment, the processing depth of the substrate irradiation area 90 within the substrate 80 corresponding to the mask irradiation area, which is a part of the effective area 22 of the mask 21, can be made uniform and multiple irradiations can be performed, making it possible to accurately perform nearly uniform uneven processing over the work area 81 of the substrate 80. Therefore, in this processing apparatus 100 as well, fine uneven processing can be performed accurately over the work area 81 of the substrate 80.

[0147] Furthermore, such a processing device 100 does not require the use of high laser energy, and can be constructed inexpensively without using expensive laser light sources or optical components. It also suppresses the deterioration of accuracy due to thermal drift of the laser beam, enabling high-precision processing. In addition, small optical components can be used, allowing for the use of inexpensive yet highly accurate components.

[0148] Furthermore, it is preferable that the processing apparatus 100 of the first embodiment is configured to perform synchronous sweep irradiation with the laser beam irradiation position fixed, in addition to the superimposed irradiation described above, similar to the second embodiment.

[0149] The following describes optional aspects of each component of the processing apparatus 100 of the present invention.

[0150] [First optical function section 10] The laser beam 1 irradiated from the laser light source 11 is preferably an excimer laser.

[0151] Excimer lasers have shorter wavelengths than conventional solid-state lasers, such as LD-pumped solid-state (DPSS) lasers, resulting in higher resolution. Therefore, using excimer lasers enables more precise surface texture processing. Furthermore, excimer lasers exhibit very high absorption properties for epoxy substrates, resulting in superior processing capabilities.

[0152] The shaping optical system 12 preferably comprises a plurality of cylindrical lenses and is an optical system that shapes the laser beam 1 from the laser light source 11 into a laser beam having a rectangular irradiation shape and uniform irradiation energy density, particularly a top-hat shaped laser beam.

[0153] Figure 5 shows a conceptual diagram of the shaping of the laser beam irradiation shape in a shaping optical system equipped with multiple cylindrical lenses.

[0154] The molded optical system 12 shown in Figure 5 comprises a plurality of cylindrical lenses consisting of an X1 cylindrical lens 13, a Y1 cylindrical lens 14, an X2 cylindrical lens 15, and a Y2 cylindrical lens 16, and a condensing lens 17. The X1 cylindrical lens 13 and the X2 cylindrical lens 15 are arranged at intervals of twice their focal length f1, as shown in the lower part of Figure 5. The Y1 cylindrical lens 14 and the Y2 cylindrical lens 16 are also arranged at intervals of twice their focal length.

[0155] The laser beam 1 emitted by the laser light source 11 shown in Figure 1 has a non-uniform irradiation shape (beam profile), as shown in Figure 5. When the laser beam 1 with such an irradiation shape is incident on the shaping optical system 12, each component of the laser beam 1 is shaped according to their positions in the X and Y directions. The lower part of Figure 5 schematically shows, for example, how the component indicated by "2" is shaped as it passes through the cylindrical lenses 14 and 16. Each component of the laser beam 1 is shaped by the cylindrical lenses 13-16 and focused at a position f2 away from the focusing lens 17. As a result of the focusing of each component, a laser beam 2 with a top-hat beam shape is formed, as shown in Figure 5, and is emitted from the shaping optical system 12 as emitted light.

[0156] By rearranging the configuration of the cylindrical lenses in the X and Y directions, it is possible to shape the beam into square, rectangular, or other shapes.

[0157] By shaping the irradiation form of the laser beam 1 using multiple cylindrical lenses 13-16, it becomes possible to form a high-quality laser beam 2 with an extremely uniform rectangular shape, particularly a top-hat shaped beam profile.

[0158] In particular, in the processing apparatus 100 of the first embodiment, by performing superimposed irradiation using such a rectangular beam profile, there are no dead spots that are not irradiated, and surface roughening can be performed with averaged surface roughening within the tolerance range of the desired processing, making it possible to perform surface roughening of the substrate 80 with extremely high efficiency.

[0159] [Second optical function section 20] The second optical function unit 20 preferably further includes a mask stage that holds the mask 21 and sweeps the mask 21. By attaching a sweeping shaft to the mask stage that holds the mask 21, efficient mask sweeping is possible.

[0160] Furthermore, by attaching correction functions (tilt axis, θ axis) to the mask stage, the surface shape of the substrate 80 to be processed can be easily corrected, making accurate processing possible.

[0161] The second optical function unit 20 can further shape the irradiation shape of the laser beam 2 that has passed through the first optical function unit 10 by passing it through the mask 21. The second optical function unit 20 can further shape the irradiation shape of the rectangularly formed laser beam 2 according to a pattern corresponding to the workpiece area 81 of the substrate 80, for example.

[0162] It is preferable that the mask 21 is installed in a direction substantially perpendicular to the horizontal plane on which the processing device 100 is installed.

[0163] As mentioned earlier, larger substrate sizes are required, and consequently, mask sizes are also increasing. Furthermore, when using a reduction projection optical system, the mask size becomes even larger.

[0164] On the other hand, the precision of the textured surface on the substrate has increased, and distortion in the mask image will affect the accuracy of the processing.

[0165] As described in Patent Document 2, when the mask is installed in the same horizontal direction as the horizontal plane on which the device is installed, if the mask is installed alone, distortion occurs due to gravity and the processing accuracy deteriorates.

[0166] When using a support at the bottom of a mask to suppress deflection, the support needs to be optically transparent. However, as the mask becomes larger, the thickness of the support material needs to be increased, which not only becomes a cost issue but also increases the absorption of laser energy within the support material, reducing the energy efficiency of the laser irradiation.

[0167] Furthermore, if the masks are placed on a horizontal surface, there is a greater risk of debris accumulating on them, and if production proceeds with debris on the masks, it will result in quality defects in a large number of products.

[0168] Furthermore, if debris gets between the support material at the bottom of the mask and the mask itself, it can not only cause product defects or damage to the mask due to the debris, but also lead to optical inhomogeneity because the refractive index differs in the small gaps that partially form between the support material and the mask. As a result, an uneven laser beam will be irradiated.

[0169] Furthermore, because the optical path length from the laser light source to the substrate is long, the height of the device increases when the mask is positioned horizontally. By positioning the mask vertically, it becomes possible to reduce the height of the device.

[0170] As in this preferred example, if the mask 21 is installed approximately perpendicular to the horizontal plane on which the processing device 100 is installed, the mask 21 will not bend, and support for preventing bending with an optically transparent material is unnecessary. As a result, the efficiency of laser energy use is high, and highly accurate and extremely uniform processing can be performed.

[0171] Furthermore, in the processing apparatus 100 of the present invention, the irradiation area of ​​the laser beam 3 that has passed through the mask 21 can be reduced by an arbitrary reduction optical system 31 described below, thereby increasing the energy density of the laser beam 4 irradiated onto the substrate. Therefore, even if the large-area mask 21 is made larger, the desired fine surface texture processing can be performed by using a reduction optical system 31 that matches it.

[0172] The size of the mask 21 is not particularly limited. For example, a mask 21 with an outer dimension of 700mm x 800mm and an effective area 22 of 600mm x 600mm can be used.

[0173] [Third optical function section 30] As shown in Figure 1, it is preferable to further include a third optical function unit equipped with a reduction projection optical system 31 between the second optical function unit 20 and the substrate stage 40.

[0174] In recent years, the miniaturization of substrate processing has progressed, and the minimum processing width is now required to be a few micrometers. This affects even minute dust particles, and in particular, fine dust particles adhering to the mask portion cause a large number of processing defects. Therefore, by making the mask 21 larger than the actual processing area and then performing reduction projection exposure of the laser beam 3 that has passed through the mask 21 using a subsequent reduction projection optical system 31, the impact of fine dust particles can be minimized.

[0175] Furthermore, by enlarging the mask 21 compared to the actual processing pattern, the energy of the laser beam 2 hitting the mask 21 can be reduced to less than the processing energy. If the reduction ratio of the reduction projection optical system 31 is N, then the energy of the laser beam hitting the mask surface is 1 / (N) compared to the processing energy of the substrate 80 surface. 2 This results in the ability to suppress thermal drift caused by the energy of the laser beam 2, thereby suppressing thermal expansion of the mask 21 and enabling high-precision machining even after long processing operations.

[0176] Furthermore, since degradation of optical components (e.g., the molding optical system 12 and the mask 21) due to the heat of the laser beam can be suppressed, the lifespan of the optical components can be extended.

[0177] Furthermore, in the processing apparatus 100 configured to perform synchronous sweep irradiation with the laser beam irradiation position fixed, as described earlier, a much smaller aperture reduction projection lens can be used compared to the method described in, for example, Patent Document 2, which moves the laser beam irradiation position. As a result, in addition to being cost-effective, lens distortion is reduced and lens aberrations can be minimized, allowing for very high processing accuracy of the substrate.

[0178] The reduction projection optical system 31 may be equipped with a pair of reduction projection lenses. When the reduction projection optical system 31 is an infinity optical system, the magnification provided by the reduction projection optical system 31 can be adjusted, for example, by the ratio of the focal lengths of the reduction projection lenses and the distance between the reduction projection lenses.

[0179] The reduction projection lens is preferably one with a high numerical aperture (NA). By using a reduction projection lens with a high NA, it is possible to form vias and trenches that are closer to a cylindrical shape.

[0180] The numerical aperture (NA) of the reduction projection lens is preferably selected to match the energy density required for processing the substrate 80. The NA of the reduction projection lens is preferably 0.12 or higher.

[0181] Preferably, the third optical function unit 30 further includes a cooling means for cooling the reduction projection optical system 31.

[0182] By providing a cooling mechanism, the thermal effects of the laser beam energy in the reduction projection optical system 30 can be further suppressed. In the reduction projection optical system 30, the laser beam 3 that has passed through the mask 21 is reduced by 1 / N, so the energy of the laser beam passing through the lens portion at the tip of the objective lens is N compared to the laser beam energy irradiated onto the mask 21. 2 The energy is doubled, making this area more susceptible to thermal effects. Therefore, by adding a cooling function to the reduction projection optical system 30 to suppress this thermal energy, thermal drift caused by the laser beam energy can be reduced, enabling high-precision machining even after long processing operations.

[0183] Furthermore, in the processing apparatus 100 configured to perform synchronous sweep irradiation with the laser beam irradiation position fixed, as described earlier, a reduction projection lens with a much smaller aperture can be used compared to the method in Patent Document 2. The cooling means for the reduction projection lens does not directly apply to the lens itself, but rather to the jacket portion that holds the lens. As the lens aperture increases, while temperature control is possible around the lens, the cooling effect does not easily reach the crucial central portion, making heat management difficult. Therefore, even slight energy absorption into the lens due to prolonged laser beam irradiation can easily cause thermal distortion. If the third optical function unit 30 has a cooling function, the lens aperture can be reduced, thereby suppressing such problems.

[0184] Furthermore, it is possible to suppress defects caused by laser beam irradiation to the reduction projection optical system 31 and extend its lifespan.

[0185] [Sweep mechanism] Preferably, the processing apparatus 100 is configured to sweep the mask 21 and the substrate stage 40 without stopping while pulsed laser beams 2 and 4 are irradiated onto the mask 21 and the substrate stage 40, respectively, in at least one sweep irradiation direction.

[0186] By performing sweep illumination without stopping, the sweep time can be significantly reduced compared to step-and-repeat operation that involves repeatedly moving and stopping. In particular, since positioning does not need to be performed when moving and stopping, the deterioration of positional accuracy due to acceleration and deceleration can be prevented.

[0187] Furthermore, because these operations occur frequently, repeated starting and stopping places a heavy load on the drive shaft and motor. Performing sweep irradiation without stopping reduces the load on the shaft and suppresses heat generation in the drive shaft area, further preventing deterioration of positional accuracy due to thermal drift, and enabling extremely high-precision surface preparation of circuit boards.

[0188] [Imaging means and alignment mechanism] The processing apparatus 100 of the present invention includes an imaging means for reading characteristic portions of a substrate 80, an imaging means for reading characteristic portions of a mask 21, and an alignment mechanism for aligning the relative positions of the substrate and the mask based on positional information of the characteristic portions of the substrate and the mask. Preferably, it further includes.

[0189] The processing apparatus 100 shown in Figure 1 includes a mask alignment camera 23 as an imaging means for reading characteristic portions of the mask 21, a substrate alignment camera 60 as an imaging means for reading characteristic portions of the substrate 80, and an alignment mechanism (not shown). The mask alignment camera 23 is configured to send positional information of the characteristic portions of the mask 21 to the alignment mechanism. The substrate alignment camera 60 is configured to send positional information of the characteristic portions of the substrate 80 to the alignment mechanism. The alignment mechanism is configured to align the relative positions of the substrate 80 and the mask 21 based on this positional information.

[0190] By aligning the position of the mask 21 with the position of the substrate 80 using an imaging means, it is possible to perform a textured surface by projecting the mask pattern onto the precise location on the surface of the substrate 80.

[0191] In particular, circuit boards are often processed across multiple layers, and if the processing position of each layer is not precisely aligned to the intended location, quality defects such as circuits not connecting in each layer or high conductivity resistance even if connected will occur. To prevent this, accuracy in processing positioning is essential.

[0192] In this case, it is preferable to further include means for correcting the processed shape of the substrate 80 with respect to the pattern of the mask 21 based on information from the alignment mechanism.

[0193] The shape of the projected image of the pattern on the mask 21 is not necessarily exactly similar to the processed shape of the substrate 80, and the magnification is not always the same due to the effects of thermal expansion, etc. Furthermore, even minute distortions or deformations of the substrate 80 may necessitate deforming the processed shape of the substrate 80 relative to the projected image of the mask 21.

[0194] Therefore, as described above, the positions of the mask 21 and the substrate 80 are acquired by imaging means (mask alignment camera 23 and substrate alignment camera 60), and by adjusting the projected image of the mask 21 to the shape to be processed on the substrate based on this information, accurate uneven processing of the substrate becomes possible.

[0195] Specifically, for example, the projection position of the projected image of the mask 21 is acquired by the beam image detection camera 70, and the projection magnification by the third optical function unit 30 is optimized based on this projection position information, and the sweep speed during sweep irradiation is also optimized based on the same information. This makes it possible to arbitrarily change the vertical and horizontal magnification of the substrate 80 relative to the image of the mask 21 within a certain range, and to apply the optimal substrate processing shape.

[0196] [Processing method] The processing method according to the first aspect of the present invention is a method of performing the superimposed irradiation described above using the processing apparatus 100 according to the first aspect. Therefore, according to the processing method according to the first aspect of the present invention, fine irregularities can be precisely processed over the workpiece area of ​​the substrate. Furthermore, irradiation can be performed at a high energy density, enabling high-speed, deep via processing and / or trench processing.

[0197] The processing method of the present invention is not limited to a method using the processing apparatus 100 of the first embodiment described above.

[0198] For example, a processing method according to a second aspect of the present invention is a processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, wherein a rectangularly shaped laser beam is passed through a mask so that the substrate irradiation area is smaller than the processing area of ​​the substrate, and the surface irregularities of the processing area of ​​the substrate are processed while superimposing a portion of the substrate irradiation area during the processing operation on the substrate.

[0199] With this processing method, a laser beam is irradiated onto the substrate so that the irradiation area is smaller than the processing area of ​​the substrate, and the surface irregularities of the processing area of ​​the substrate are processed by overlapping a portion of the irradiation area, i.e., overlapping irradiation is performed, so it is possible to accurately perform nearly uniform irregularities across the processing area of ​​the substrate. Therefore, with a processing apparatus of this form, fine irregularities can be processed accurately across the processing area of ​​the substrate.

[0200] Furthermore, in the processing method of the second aspect of the present invention, by using an excimer laser, it becomes possible to process the surface with even higher precision.

[0201] Alternatively, a processing method according to a third aspect of the present invention is a method of performing synchronous sweep irradiation with the irradiation position of the laser beam fixed, using the processing apparatus 100 of the second aspect described above. Therefore, according to the processing method of the third aspect of the present invention, fine unevenness processing can be performed with high precision over the processing area of ​​the substrate. Furthermore, according to the processing method of the third aspect, processing can be performed with higher precision than when scanning the laser beam. In addition, with such a processing method, a large-area mask can be used as the mask 21, and by using a large-area mask in combination with the third optical function unit 30 described above, processing can be performed at a higher energy density.

[0202] It is particularly preferable to perform both the superimposed irradiation and the synchronous sweep irradiation with the laser beam irradiation position fixed during the processing operation on the substrate.

[0203] In the processing method of the first or third aspect of the present invention, it is preferable to use a processing apparatus 100 that satisfies one or more of the optional items described above.

[0204] Furthermore, in the processing method of the first or third aspect of the present invention, it is preferable to sweep the mask 21 and the substrate stage 40 without stopping while pulse-irradiating the mask 21 and the substrate stage 40 with the laser beam 2 or 4, respectively, in at least one sweep irradiation direction.

[0205] By performing this type of sweeping, for the reasons explained earlier, it is possible to significantly reduce the sweeping time compared to the step-and-repeat operation of repeatedly moving and stopping.

[0206] Furthermore, in the processing method of the first or third aspect of the present invention, it is preferable to repeat sweep irradiation multiple times for each processing area 81 of the substrate 80.

[0207] As mentioned above, while high precision is required for the textured surface of the circuit board, there is also a demand for high aspect ratio processing, meaning that the depth of the textured surface needs to be greater.

[0208] However, the depth that can be machined in a single sweep (1 Pass) is limited, and especially with the non-stop sweep method described above, it is not possible to irradiate the same machined area multiple times.

[0209] Therefore, by performing laser pulse irradiation while sweeping, and doing this multiple times for each workpiece area 81 of the substrate 80, it is possible to process to the desired depth and perform high-speed processing.

[0210] Furthermore, between each sweep operation (first sweep, second sweep, ...), as explained with reference to Figures 3 and 4, the substrate irradiation area 90 is shifted each time, thereby averaging the processing depth and enabling processing to a uniform depth.

[0211] In the processing method of the first or third embodiment, it is preferable to further include reading the characteristic portion of the substrate 80 and the characteristic portion of the mask 21, and aligning the relative positions of the substrate 80 and the mask 21 using an alignment mechanism based on the positional information of the characteristic portion of the substrate 80 and the characteristic portion of the mask 21.

[0212] The characteristic features of the substrate 80 can be read, for example, by a substrate alignment camera 60. The characteristic features of the mask 21 can be read, for example, by a mask alignment camera 23.

[0213] By aligning the position of the mask 21 with the position of the substrate 80 using the alignment mechanism based on the information obtained from the alignment cameras 23 and 60, it becomes possible to perform uneven surface processing by projecting the mask pattern onto the precise position on the surface of the substrate 80.

[0214] In this case, it is preferable to further include correcting the processed shape of the substrate 80 with respect to the pattern of the mask 21 based on information from the alignment mechanism.

[0215] This processing method allows for more precise surface preparation on the substrate. Such corrections can be performed by combining, for example, the third optical function unit 30, the beam image detection camera 70, the sweeping mechanism of the mask 21, and the sweeping mechanism of the substrate stage 80.

[0216] [Manufacturing method for circuit boards] In the substrate manufacturing method of the present invention, the substrate is processed by the processing method of the present invention.

[0217] With this type of substrate manufacturing method, the processing depth of the substrate irradiation area within the substrate, which corresponds to the mask irradiation area (a portion of the mask's effective area), can be made uniform, and multiple irradiations can be performed. This makes it possible to accurately create nearly uniform surface texture across the entire workpiece area of ​​the substrate. Therefore, with this method of substrate manufacturing, it is possible to manufacture a substrate in which fine surface texture is accurately formed across the entire workpiece area.

[0218] Furthermore, this method of manufacturing substrates does not require the use of high laser energy, and the laser light source and optical components used can be inexpensively constructed without the need for expensive materials. In addition, it can suppress the deterioration of accuracy due to thermal drift of the laser beam, and thus enable the manufacture of substrates with high precision.

[0219] In particular, with a substrate manufacturing method using the processing method of the first embodiment described above, the superimposed irradiation is performed during the processing operation on the substrate, enabling high-speed, deep via processing and / or trench processing. Furthermore, since the substrate irradiation area in a single shot can be reduced, high-density irradiation becomes possible.

[0220] Furthermore, in the manufacturing method of the substrate using the processing method of the third embodiment described above, the synchronous sweep irradiation is performed with the irradiation position of the laser beam fixed during the processing operation on the substrate, so processing can be performed with higher precision than when scanning the laser beam. In addition, with such a processing method, a large-area mask can be used, so processing can be performed at a higher energy density.

[0221] The substrate manufacturing method of the present invention can be particularly advantageously applied to the manufacture of semiconductor packages.

[0222] It should be noted that the present invention is not limited to the embodiments described above. The embodiments described above are illustrative, and any configuration that is substantially identical to the technical idea described in the claims of the present invention and achieves similar effects is included within the technical scope of the present invention.

Claims

1. A processing apparatus for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, A first optical function unit comprising a laser light source that irradiates the laser beam in a pulsed manner, and a shaping optical system that shapes the irradiation shape of the laser beam from the laser light source into a rectangular shape, A second optical function unit comprising a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, A substrate stage for holding the aforementioned substrate, Includes, The mask includes a mask irradiation area to which the laser beam that has passed through the first optical function unit is irradiated, and the mask irradiation area is a part of the effective area of ​​the mask. The substrate includes a substrate irradiation area on which the pattern is projected by the laser beam that has passed through the mask, The substrate irradiation area is smaller than the workpiece area of ​​the substrate. During the processing operation on the substrate, the system is configured to perform multiple sweep irradiations, in which the mask and the substrate stage are swept in a constant direction along a constant sweep axis, while overlapping a portion of the substrate irradiation area so as to ensure uniform processing depth, thereby creating surface irregularities in the workpiece area of ​​the substrate. The aforementioned multiple sweep irradiations include sweep irradiations that overlap with a portion of the previously swept irradiation area and are swept with a shift in a direction perpendicular to the constant sweep axis so that the machining depth is made uniform. The length of the substrate irradiation area in the direction of the constant sweep axis is shorter than the length of the workpiece area of ​​the substrate in the direction of the constant sweep axis. A processing apparatus in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the workpiece area of ​​the substrate in the direction perpendicular to the constant sweep axis.

2. The mask and the substrate stage are configured to maintain a relative corresponding positional relationship by operating synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated. The processing apparatus according to claim 1, wherein, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronous motion to sweep and irradiate along a certain sweep axis while superimposing a portion of the irradiation area of ​​the substrate, thereby performing surface unevenness processing on the workpiece area of ​​the substrate.

3. The processing apparatus according to claim 1 or 2, wherein the laser beam is an excimer laser.

4. The processing apparatus according to any one of claims 1 to 3, further comprising a mask stage for holding the mask and sweeping the mask.

5. The processing apparatus according to any one of claims 1 to 4, further comprising a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

6. The processing apparatus according to any one of claims 1 to 5, wherein the forming optical system comprises a plurality of cylindrical lenses and is an optical system that forms the laser beam from the laser light source into a laser beam whose irradiation shape is rectangular and top-hat shaped.

7. The processing apparatus according to any one of claims 1 to 6, wherein the second optical function unit further shapes the irradiation shape of the laser beam that has passed through the first optical function unit by passing it through the mask.

8. The processing apparatus according to any one of claims 1 to 7, wherein, in the sweep irradiation in at least one direction, the mask and the substrate stage are swept without stopping while the laser beam is pulsed onto the mask and the substrate stage.

9. The processing apparatus according to any one of claims 1 to 8, wherein the mask is installed in a direction substantially perpendicular to the horizontal plane on which the processing apparatus is installed.

10. A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, The processing apparatus includes a first optical function unit equipped with a laser light source and a molding optical system, a second optical function unit equipped with a mask including an effective area having a pattern corresponding to the area to be processed on the substrate, and a substrate stage for holding the substrate. In the first optical function unit, the laser beam is pulsed from the laser light source onto the shaping optical system to shape the irradiation shape of the laser beam into a rectangular shape. In the second optical function unit, the laser beam that has passed through the first optical function unit is irradiated onto the mask irradiation area, which is a part of the effective area of ​​the mask. The laser beam that has passed through the mask is irradiated onto the substrate irradiation area of ​​the substrate, thereby projecting the pattern onto the substrate irradiation area. Includes, The substrate irradiation area is made smaller than the workpiece area of ​​the substrate. During the processing operation on the substrate, multiple sweep irradiations are performed, overlapping a portion of the substrate irradiation area in a constant direction along a constant sweep axis to ensure uniform processing depth, thereby sweeping and irradiating the mask and the substrate stage, and processing the surface irregularities of the workpiece area of ​​the substrate. The aforementioned multiple sweep irradiations include sweep irradiations that overlap with a portion of the previously swept irradiation area and are swept with a shift in a direction perpendicular to the constant sweep axis so that the machining depth is made uniform. The length of the substrate irradiation area in the direction of the constant sweep axis is made shorter than the length of the workpiece area of ​​the substrate in the direction of the constant sweep axis. A processing method in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the workpiece area of ​​the substrate in the direction perpendicular to the constant sweep axis.

11. A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. During the processing operation on the substrate, multiple sweep irradiations are performed, overlapping a portion of the substrate irradiation area in a constant direction along a constant sweep axis to ensure uniform processing depth, thereby creating surface irregularities on the workpiece area of ​​the substrate. The aforementioned multiple sweep irradiations include sweep irradiations that overlap with a portion of the previously swept irradiation area and are swept with a shift in a direction perpendicular to the constant sweep axis so that the machining depth is made uniform. The length of the substrate irradiation area in the direction of the constant sweep axis is made shorter than the length of the workpiece area of ​​the substrate in the direction of the constant sweep axis. A processing method in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the workpiece area of ​​the substrate in the direction perpendicular to the constant sweep axis.

12. The mask and the substrate stage are operated synchronously in a planar direction substantially perpendicular to the direction in which the laser beam is irradiated, thereby maintaining a relative corresponding positional relationship. The processing method according to claim 10, wherein, during the processing operation on the substrate, the irradiation position of the laser beam is fixed, and the mask and the substrate stage are operated in synchronous motion to swipe and irradiate along a certain sweep axis while superimposing a portion of the irradiation area of ​​the substrate, thereby processing the surface irregularities of the area to be processed on the substrate.

13. The processing method according to any one of claims 10 to 12, wherein an excimer laser is used as the laser beam.

14. The processing method according to claim 10 or 12, wherein the processing apparatus further includes a third optical function unit equipped with a reduction projection optical system between the second optical function unit and the substrate stage.

15. The processing method according to any one of claims 10, 12, or 14, wherein the irradiation shape of the laser beam that has passed through the first optical function unit is further shaped by passing it through the mask in the second optical function unit.

16. The processing method according to any one of claims 10, 12, 14, and 15, wherein the mask and the substrate stage are swept without stopping while the laser beam is pulsed onto the mask and the substrate stage during the sweep irradiation in at least one direction.

17. A processing method for forming fine irregularities on the surface of a substrate by ablation processing using the irradiation energy of a laser beam, By passing a rectangularly shaped laser beam through a mask, the substrate is irradiated with the laser beam so that the irradiation area is smaller than the processing area of ​​the substrate. During the processing operation on the substrate, with the irradiation position of the laser beam fixed, the laser beam is irradiated in a sweeping motion along a certain sweep axis while overlapping a portion of the irradiation area of ​​the substrate, thereby processing the surface irregularities of the workpiece area of ​​the substrate. The length of the substrate irradiation area in the direction of the constant sweep axis is made shorter than the length of the workpiece area of ​​the substrate in the direction of the constant sweep axis. A processing method in which the length of the substrate irradiation area in a direction perpendicular to the constant sweep axis is shorter than the length of the workpiece area of ​​the substrate in the direction perpendicular to the constant sweep axis.

18. The processing method according to claim 17, wherein the sweep irradiation is performed while superimposing a portion of the substrate irradiation area.

19. A method for manufacturing a substrate having fine irregularities, comprising performing ablation processing on the surface of the substrate using the irradiation energy of a laser beam by the processing method described in any one of claims 10 to 18 to form fine irregularities.

20. The method for manufacturing a substrate according to claim 19, wherein the substrate is a substrate for semiconductor packaging.

21. A substrate for semiconductor packaging is manufactured by the substrate manufacturing method described in claim 20. A method for manufacturing a semiconductor package, comprising manufacturing a semiconductor package using the semiconductor package substrate.

22. A method for manufacturing multilayered wiring using build-up film, A step of performing ablation processing on the surface of the build-up film using the irradiation energy of a laser beam, according to the processing method described in any one of claims 10 to 18, to create trenches, and A method for manufacturing wiring, comprising the step of forming a metal layer in the trench and providing wiring.

23. A method for manufacturing multilayered wiring using build-up film, A step of performing ablation processing on the surface of the build-up film using the irradiation energy of a laser beam, according to the processing method described in any one of claims 10 to 18, to provide through holes, and A method for manufacturing wiring, comprising the step of forming a metal layer in the through hole and providing a VIA.

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