electronic machinery

Abstract

To provide an electronic appliance having an authentication method with high security.SOLUTION: An electronic appliance includes a pixel part, a sensor part, and an authentication part. The pixel part includes a display element and a light-receiving element. The pixel part includes a first region and has a function of lighting the display element in the first region. The pixel part has a function of imaging a target in contact with the first region using the light-receiving element and acquiring first authentication information. The sensor part includes a second region and has a function of imaging a target in contact with the second region and acquiring second authentication information. The authentication part has a function of performing a first authentication process using the first authentication information. In addition, the authentication part has a function of performing a second authentication process using the second authentication information.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device. Another aspect of the present invention relates to a method for authenticating a display device. Another aspect of the present invention relates to an electronic device. Another aspect of the present invention relates to a method for authenticating an electronic device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention disclosed herein include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving them, or methods for manufacturing them. A semiconductor device refers to any device that can function by utilizing semiconductor properties. [Background technology]

[0003] In recent years, information terminal devices such as smartphones and other mobile phones, tablet devices, and notebook PCs (personal computers) have become widespread. These information terminal devices often contain personal information, and various authentication technologies have been developed to prevent their unauthorized use.

[0004] For example, Patent Document 1 discloses an electronic device equipped with a fingerprint sensor in the push-button switch section. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] U.S. Patent Application Publication No. 2014 / 0056493 [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] An object of one embodiment of the present invention is to provide an electronic device having an authentication function typified by fingerprint authentication. Another object is to provide a highly secure electronic device. Another object is to provide an electronic device with high operability. Another object is to provide a multifunctional electronic device. Another object is to provide a novel electronic device. Another object is to provide an electronic device having a highly secure authentication method. Another object is to provide an electronic device having a novel authentication method.

[0007] Note that the description of these objects does not preclude the existence of other objects. One embodiment of the present invention does not need to solve all of these objects. Objects other than these can be extracted from the description of the specification, drawings, claims, and the like. [Means for Solving the Problem]

[0008] One embodiment of the present invention is an electronic device including a pixel portion, a sensor portion, and an authentication portion. The pixel portion includes a display element and a light-receiving element. The pixel portion has a first region and has a function of lighting the display element in the first region. The pixel portion has a function of imaging an object touching the first region with use of the light-receiving element to obtain first authentication information. The sensor portion has a second region and has a function of imaging an object touching the second region to obtain second authentication information. The authentication portion has a function of performing first authentication processing with use of the first authentication information. The authentication portion also has a function of performing second authentication processing with use of the second authentication information.

[0009] In the aforementioned electronic device, the sensor portion is preferably an ultrasonic sensor.

[0010] In the aforementioned electronic device, the second region is preferably provided on the same surface as the pixel portion.

[0011] In the aforementioned electronic device, the second region is preferably provided on a surface facing the pixel portion.

[0012] In the aforementioned electronic device, it is preferable that the first region has an area that overlaps with the second region.

[0013] In the aforementioned electronic device, it is preferable that the first region does not have an overlapping region with the second region.

[0014] In the aforementioned electronic device, the pixel portion preferably has a touch sensor. The touch sensor preferably has the function of detecting the position of an object that touches the pixel portion. The pixel portion preferably has the function of lighting up a display element in the area where the object touches and its vicinity, which is designated as a first region.

[0015] In the aforementioned electronic device, the object is preferably a finger.

[0016] One aspect of the present invention is an authentication method for an electronic device having a pixel unit, a sensor unit, and an authentication unit, wherein the pixel unit has a display element and a light-receiving element. The aforementioned electronic device has the step of the pixel unit lighting up a display element in a first region. The light-receiving element has the step of capturing an image of an object touching the first region and acquiring first authentication information. The authentication unit has the step of performing a first authentication process using the first authentication information. The sensor unit has the step of capturing an image of an object touching the sensor unit and acquiring second authentication information. The authentication unit has the step of performing a second authentication process using the second authentication information.

[0017] One aspect of the present invention is an authentication method for an electronic device having a pixel unit, a sensor unit, and an authentication unit, wherein the pixel unit has a display element, a light-receiving element, and a touch sensor. The aforementioned electronic device has the steps of: the touch sensor detecting the position of an object touching the pixel unit; the pixel unit lighting up the display element at the position touched by the object and in the vicinity thereof; the light-receiving element capturing an image of the object touched at the aforementioned position and in the vicinity thereof and obtaining first authentication information; the authentication unit performing a first authentication process using the first authentication information; the sensor unit capturing an image of an object touching the sensor unit and obtaining second authentication information; and the authentication unit performing a second authentication process using the second authentication information.

[0018] In the aforementioned authentication method for electronic devices, the sensor unit is preferably an ultrasonic sensor. [Effects of the Invention]

[0019] According to one aspect of the present invention, it is possible to provide an electronic device having an authentication function such as fingerprint authentication. Alternatively, it is possible to provide a highly secure electronic device. Alternatively, it is possible to provide an electronic device with high operability. Alternatively, it is possible to provide a multi-functional electronic device. Alternatively, it is possible to provide a novel electronic device. Alternatively, it is possible to provide an electronic device having a highly secure authentication method. Alternatively, it is possible to provide an electronic device having a novel authentication method.

[0020] Furthermore, the description of these effects does not preclude the existence of other effects. Moreover, one aspect of the present invention does not necessarily have to possess all of these effects. Other effects can be extracted from the description in the specification, drawings, claims, etc. [Brief explanation of the drawing]

[0021] [Figure 1] Figure 1 shows an example of a display device configuration. [Figure 2]Figure 2 is a flowchart showing an example of an authentication method. [Figure 3] Figures 3A and 3B show examples of electronic device configurations. [Figure 4] Figure 4A shows an example of the configuration of an electronic device. Figure 4B shows an example of authentication information. [Figure 5] Figure 5A shows an example of an electronic device configuration. Figure 5B shows an example of authentication information. [Figure 6] Figure 6A shows an example of the configuration of an electronic device. Figure 6B shows an example of authentication information. [Figure 7] Figure 7A shows an example of the configuration of an electronic device. Figure 7B shows an example of authentication information. [Figure 8] Figure 8 is a flowchart showing an example of an authentication method. [Figure 9] Figure 9 shows an example of the configuration of an electronic device. [Figure 10] Figure 10 is a flowchart showing an example of an authentication method. [Figure 11] Figures 11A and 11B show examples of electronic device configurations. [Figure 12] Figure 12 shows an example of a display device configuration. [Figure 13] Figure 13 is a flowchart showing an example of an authentication method. [Figure 14] Figures 14A and 14B show examples of the configuration of electronic equipment. [Figure 15] Figures 15A to 15D show examples of electronic device configurations. [Figure 16] Figures 16A to 16D show examples of electronic device configurations. [Figure 17] Figures 17A to 17D are cross-sectional views showing an example of a display device. Figures 17E to 17G are top views showing an example of a pixel. [Figure 18] Figures 18A to 18D are top views showing an example of a pixel. [Figure 19] Figures 19A to 19E are cross-sectional views showing an example of a light-emitting / receiving element. [Figure 20] Figures 20A and 20B are cross-sectional views showing an example of a display device. [Figure 21] Figures 21A and 21B are cross-sectional views showing an example of a display device. [Figure 22] Figures 22A and 22B are cross-sectional views showing an example of a display device. [Figure 23] Figures 23A and 23B are cross-sectional views showing an example of a display device. [Figure 24] Figures 24A and 24B are cross-sectional views showing an example of a display device. [Figure 25] Figure 25 is a perspective view showing an example of a display device. [Figure 26] Figure 26 is a cross-sectional view showing an example of a display device. [Figure 27] Figure 27 is a cross-sectional view showing an example of a display device. [Figure 28] Figure 28A is a cross-sectional view showing an example of a display device. Figure 28B is a cross-sectional view showing an example of a transistor. [Figure 29] Figure 29A is a cross-sectional view showing an example of a display device. Figure 29B is a cross-sectional view showing an example of a transistor. [Figure 30] Figures 30A and 30B show examples of electronic devices. [Figure 31] Figures 31A to 31D show examples of electronic devices. [Figure 32] Figures 32A to 32F show examples of electronic devices. [Modes for carrying out the invention]

[0022] The embodiments will be described below with reference to the drawings. However, it will be readily apparent to those skilled in the art that the embodiments can be implemented in many different ways, and their form and details can be modified in various ways without departing from the spirit and scope thereof. Accordingly, the present invention shall not be construed as being limited to the contents of the following embodiments.

[0023] In the configuration of the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the hatch patterns are the same, and reference numerals may not be assigned.

[0024] In the figures described herein, the size of each component, the thickness of the layers, or the area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to those figures.

[0025] Furthermore, ordinal numbers such as "the first," "the second," etc., used in this specification are added to avoid confusion of constituent elements and do not imply any numerical limitation.

[0026] In the following, expressions indicating direction, such as "up" and "down," will generally be used in accordance with the orientation shown in the drawings. However, for the purpose of simplifying explanations, the direction referred to as "up" or "down" in the specification may not always coincide with that of the drawings. For example, when explaining the stacking order (or formation order) of a laminate, even if the side on which the laminate is provided (the surface to be formed, the support surface, the adhesive surface, the flat surface, etc.) is located above the laminate in the drawing, that direction may be described as "down," and the opposite direction as "up."

[0027] In this specification, a display panel, which is one form of a display device, has the function of displaying (outputting) images or the like on its display surface. Therefore, a display panel is one form of an output device.

[0028] In this specification, a display panel on which a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package) is attached, or on which an IC is mounted on the board using a COG (Chip On Glass) method, may be referred to as a display panel module, display module, or simply a display panel.

[0029] In this specification, a touch panel, which is one form of a display device, has the function of displaying images, etc., on its display surface, and the function of a touch sensor that detects when a detectable object such as a finger or stylus touches, presses, or approaches the display surface. Therefore, a touch panel is one form of an input / output device.

[0030] A touch panel can also be called, for example, a display panel (or display device) with a touch sensor, or a display panel (or display device) with touch sensor functionality. A touch panel can also have a configuration comprising a display panel and a touch sensor panel. Alternatively, the display panel may have a touch sensor function located inside or on its surface.

[0031] In this specification, a touch panel circuit board with a connector or IC mounted on it may be referred to as a touch panel module, display module, or simply a touch panel.

[0032] (Embodiment 1) In this embodiment, a display device and an electronic device, which are aspects of the present invention, will be described.

[0033] A display device according to one aspect of the present invention comprises a pixel section, a sensor section, and an authentication section.

[0034] The pixel unit has display elements and light-receiving elements arranged in a matrix. A portion of the light emitted by the display elements is reflected by the object, and this reflected light enters the light-receiving element. The light-receiving element can output an electrical signal according to the intensity of the incident light. Therefore, by having light-receiving elements arranged in a matrix, the pixel unit can acquire (also called image capture) the positional information or shape of an object (subject) that touches or is close to the pixel unit as data. In other words, the pixel unit has the function of displaying an image, and can also function as an image sensor panel or an optical sensor.

[0035] The pixel unit has the function of capturing an image of an object that touches the pixel unit using a light-receiving element and acquiring first authentication information. The sensor unit has the function of capturing an image of an object that touches the sensor unit and acquiring second authentication information. The sensor unit can preferably use, for example, an ultrasonic sensor. The authentication unit has the function of performing a first authentication process using the first authentication information. The authentication unit also has the function of performing a second authentication process using the second authentication information. A display device according to one aspect of the present invention can enhance security by performing authentication using multiple different methods.

[0036] The object to be imaged can be, for example, a finger or a palm. If the object is a finger, a fingerprint image can be used as the first and second authentication information. If the object is a palm, a palm print image can be used as the first and second authentication information. Note that the object used for the first authentication information and the object used for the second authentication information may be different. For example, a palm print image may be used for the first authentication information and a fingerprint image for the second authentication information. Security can be enhanced by performing authentication using different objects.

[0037] <Example of display device configuration 1> Figure 1 shows a block diagram of a display device 400, which is one embodiment of the present invention. The display device 400 includes a control unit 401, a pixel unit 402, a sensor unit 403, and a storage unit 404. The control unit 401 includes an authentication unit 407. The pixel unit 402 includes a display element 405 and a light-receiving element 406. The display device 400 can be applied to electronic devices such as personal digital assistants.

[0038] Here, we will explain using the example of using a finger as the object to be imaged.

[0039] In the drawings attached to this specification, the components are classified by function and shown as independent blocks in the block diagrams. However, in reality, it is difficult to completely separate the components by function, and one component may be involved in multiple functions, or one function may be realized by multiple components.

[0040] The control unit 401 has the function of controlling the entire system of the display device 400. Furthermore, the control unit 401 has the function of comprehensively controlling each component of the display device 400.

[0041] The control unit 401 functions, for example, as a central processing unit (CPU). The control unit 401 interprets and executes instructions from various programs by the processor, thereby performing various data processing or program control. The programs that can be executed by the processor may be stored in the memory area of ​​the processor or in the storage unit 404.

[0042] The control unit 401 has functions such as generating image data to be output to the pixel unit 402, processing first authentication information input from the light-receiving element 406 of the pixel unit 402, processing second authentication information input from the sensor unit 403, and controlling the lock state of the display device 400.

[0043] The pixel unit 402 has the function of displaying an image using the display element 405 based on image data input from the control unit 401. The pixel unit 402 can capture images of an object (subject) that touches or is close to the pixel unit 402. For example, some of the light emitted by the display element 405 is reflected by the object, and this reflected light is incident on the light-receiving element 406. The light-receiving element can output an electrical signal according to the intensity of the incident light, and since the pixel unit 402 has multiple light-receiving elements 406 arranged in a matrix, it can acquire (image) the position information or shape of the object as data. The pixel unit 402 can be said to have the function of an image sensor panel or an optical sensor.

[0044] The pixel unit 402 has the function of acquiring first authentication information of the user using the light-receiving element 406 and outputting the first authentication information to the control unit 401. As the first authentication information, for example, an image of the fingerprint of the user who touched the pixel unit 402 (also called the first captured image or first captured data) can be used. The pixel unit 402 can acquire the first authentication information by capturing an image of the fingerprint of the user who touched it using the light-receiving element 406.

[0045] Since the pixel unit 402, which has the function of an optical sensor, can acquire color information of the object, color information may be included in the first authentication information. For example, if the object is a finger, in addition to fingerprint information, skin color information can be acquired as the first authentication information.

[0046] The sensor unit 403 has the function of acquiring the user's second authentication information and outputting the second authentication information to the control unit 401. As the second authentication information, for example, an image of the user's fingerprint that touched the display device 400 (also called the second captured image or second captured data) can be used. The sensor unit 403 can be an ultrasonic sensor, an optical sensor, a capacitive sensor, etc. An ultrasonic sensor can be particularly preferably used for the sensor unit 403.

[0047] Ultrasonic sensors emit ultrasonic waves and detect the reflected waves from the object, thereby acquiring three-dimensional information about the object's surface irregularities. Since ultrasonic waves penetrate skin, if the object is a human finger, it can detect not only the irregularities of the finger (fingerprint) but also blood flow within the skin. By using an ultrasonic sensor in the sensor unit 403, the acquisition of the second set of authentication information can be performed with high sensitivity.

[0048] The storage unit 404 has the function of storing user information of a pre-registered user. For example, the user's fingerprint information can be used as user information. The storage unit 404 can output user information to the authentication unit 407 in response to a request from the control unit 401.

[0049] Preferably, the memory unit 404 stores fingerprint information for all fingers used by the user for authentication. For example, it can store fingerprint information for the user's right index finger and left index finger. The user can freely register one or more fingerprints from not only their index finger, but also their middle finger, ring finger, little finger, and thumb, and the memory unit 404 can store all registered fingerprint information.

[0050] The control unit 401 has a function that, in user authentication performed by the authentication unit 407, when authentication is successful, the system is released from a locked state and the display device 400 becomes usable.

[0051] The control unit 401 has a function to light up the display element 405 of the pixel unit 402 when it detects operation of the display device 400 while the system of the display device 400 is locked. Furthermore, the control unit 401 has a function to request the pixel unit 402 to perform fingerprint imaging while the display element 405 is lit.

[0052] The control unit 401 may have a function to generate image data including an image indicating a touch position (also called a touch position indicator image) for the pixel unit 402 when the system of the display device 400 is locked, and to output said image data to the pixel unit 402.

[0053] The authentication unit 407 has the function of comparing the first authentication information input from the pixel unit 402 with the fingerprint information held in the storage unit 404 and executing a process (first authentication process) to determine whether they match or not. The authentication unit 407 also has the function of comparing the second authentication information input from the sensor unit 403 with the fingerprint information held in the storage unit 404 and executing a process (second authentication process) to determine whether they match or not.

[0054] The first and second authentication processes can each employ methods such as template matching or pattern matching, which compare two images and use their similarity. The first and second authentication processes may also use manutiae methods that compare feature points (Minutia) such as endpoints and branching points of image patterns. Furthermore, the first and second authentication processes may each employ inference using machine learning. In this case, it is particularly preferable that the first and second authentication processes are performed using inference with a neural network. The first and second authentication processes may use the same method or different methods.

[0055] A display device 400 according to one aspect of the present invention can be made highly secure by performing multi-stage authentication (hereinafter also referred to as multi-stage authentication) consisting of a first authentication and a second authentication. In a display device 400 according to one aspect of the present invention, for example, first authentication information acquired by a pixel unit 402 having the function of an optical sensor can be used for the first authentication, and second authentication information acquired by a sensor unit 403 that applies an ultrasonic sensor can be used for the second authentication. In a display device 400 according to one aspect of the present invention, security can be further enhanced by performing authentication using multiple different methods.

[0056] If the first authentication information includes color information, the first authentication process may be performed using the color information. By using color information in addition to fingerprint information in the first authentication process, a more secure display device can be created.

[0057] <Example of authentication method 1> The following describes an example of an authentication method using the display device 400. Here, we will describe the operation of authenticating a user using a fingerprint as an authentication method for an electronic device to which the display device 400 is applied.

[0058] Figure 2 shows a flowchart illustrating the operation of the authentication method using the display device 400. Figure 3A shows the electronic device 420 to which the display device 400 is applied. The electronic device 420 has a housing 421 and a pixel unit 422. The electronic device 420 has the aforementioned control unit 401, sensor unit 403, and storage unit 404 within the housing 421. The aforementioned pixel unit 402 can be applied to the pixel unit 422.

[0059] First, processing begins. At this time, the system of the electronic device 420 is locked, and the functions that the user can perform are limited (including the logout and logoff states).

[0060] In step S11, user operation on the electronic device 420 is detected. Methods for detecting user operation include, for example, turning on the power to the electronic device 420, pressing a physical button, detecting the user's gaze, increasing ambient light, or a significant change in the orientation of the electronic device 420. If operation is detected, the process proceeds to step S12. Step S11 is repeated until operation is detected.

[0061] Next, in step S12, the display elements 405 of the pixel unit 422 are lit. The light emitted from the display elements 405 can be used as a light source when imaging with the light-receiving element 406. Therefore, the display elements 405 that are lit can be display elements that emit light that can be received by the light-receiving element 406. For example, if the pixel unit 422 has three display elements 405 of red (R), green (G), and blue (B), one of these, two of these, or all three of these display elements 405 can be lit.

[0062] In step S12, all of the display elements 405 of the pixel unit 422 may be lit, or some of the display elements 405 of the pixel unit 422 may be lit. In this specification, the area where the first authentication information is acquired may be referred to as the first area. Figure 3B shows an example where all of the display elements 405 of the pixel unit 422 are lit, that is, the entire surface of the pixel unit 422 is designated as the first area 425. The user can perform the first authentication by touching the first area 425. If the entire surface of the pixel unit 422 is designated as the first area 425, the user can perform the first authentication by touching any area of ​​the pixel unit 422.

[0063] When some of the display elements 405 of the pixel section 422 are lit, that is, when a part of the pixel section 422 is designated as the first region 425, the user can perform the first authentication by touching the first region 425. Display elements 405 other than those in the first region 425 may be turned off. Since the display elements 405 lit in the first region 425 are covered by the finger 430, it is possible to prevent the user from seeing the bright light. In other words, it is possible to prevent the user from directly seeing the light for the first authentication. For example, in a dark environment, if the user directly sees the light for the first authentication, they may feel dazzled and there is also a risk of damaging their eyes with the light, so litting only the first region 425 can reduce the burden on the user. Note that any image may be displayed in the regions other than the first region 425.

[0064] In step S12, the brightness of the display element 405 to be lit can be appropriately changed depending on the brightness of the operating environment or the sensitivity of the light-receiving element 406, but it is preferable to light it up as brightly as possible. For example, if the luminance or gradation value when the display element 405 is lit up to its brightest is set to 100%, the luminance or gradation value can be set to 50% or more and 100% or less, preferably 70% or more and 100% or less, and more preferably 80% or more and 100% or less.

[0065] Next, in step S13, the first authentication information is obtained using the light-receiving element 406. The first authentication information is output from the pixel unit 422 to the control unit 401 as image data (first image data) captured by the light-receiving element 406. The area in which imaging is performed can be the first area 425.

[0066] In step S12, if all display elements 405 of the pixel unit 422 are lit, that is, if the entire surface of the pixel unit 422 is designated as the first region 425, then all light-receiving elements 406 of the pixel unit 422 are activated to obtain the first authentication information. Figure 4A shows the process of designating the entire surface of the pixel unit 422 as the first region 425 and touching the first region 425 with a finger 430 to capture a fingerprint as the first image data. Figure 4B shows an example of the captured fingerprint image data (first image data) as the first authentication information 451.

[0067] In step S12, if some of the display elements 405 of the pixel section 422 are lit, that is, if a part of the pixel section 422 is designated as the first region 425, the light-receiving elements 406 of the first region 425 are operated to obtain the first authentication information. The first region can be said to be a part of the pixel section 422. Figure 5A shows a fingerprint being captured as the first image data by touching a finger 430 to the first region 425, where a part of the pixel section 422 is designated as the first region 425. Figure 5B shows an example of the captured fingerprint image data (first image data) as the first authentication information 451. Note that even if a part of the pixel section 422 is designated as the first region 425 in step S12, the first authentication information may also be obtained by operating all of the light-receiving elements 406 of the pixel section 422.

[0068] The position of the first area 425 may be the same each time the process is executed, but it is preferable that it be a different position each time the process is executed. That is, each time the process is executed, the user can be asked to touch a randomly indicated location that is different each time, and the first authentication can be performed.

[0069] For example, if fingerprint imaging is performed at the same position each time, the display element 405, which is lit as a light source for capturing fingerprints, and the transistors that make up the pixels will deteriorate more easily, which may lead to problems such as a decrease in the luminescence brightness of the display element 405 and screen burn-in. Therefore, by performing fingerprint authentication at a different position each time the process is executed as described above, it is possible to suppress the decrease in brightness of the display element 405 and screen burn-in.

[0070] By requiring fingerprint authentication at a different location each time a process is executed, users are required to actively perform the authentication action, which can improve their security awareness.

[0071] Multiple first regions 425 can be provided in the pixel region 422, allowing two or more fingers to touch simultaneously and perform first authentication based on two or more fingerprints. Alternatively, first authentication may be performed multiple times, such as performing first authentication with one finger, and if successful, performing first authentication again with a different finger.

[0072] By performing the first authentication using multiple fingerprints rather than just one, the electronic device 420 can be made more secure. For example, even if a malicious user were to illegally obtain the fingerprint information of the true user (owner) and use the electronic device 420, the electronic device 420 cannot be used without the fingerprint information of multiple (preferably all) fingers, thus effectively preventing unauthorized use.

[0073] If the first authentication is to be performed multiple times, the process from steps S12 to S14 should be executed multiple times. For example, in the case of two-factor authentication, the first process uses the fingerprint of the middle finger of the right hand for authentication, and if authenticated, the second process uses the fingerprint of the ring finger of the left hand for authentication, and if authenticated, the process proceeds to step S15. It is also preferable to randomly change the fingers used in the first and second processes each time.

[0074] Next, in step S14, the authentication unit 407 performs the first authentication process. Specifically, the authentication unit 407 compares the first authentication information (first image data) output from the pixel unit 422 with the user's fingerprint information that has been registered in advance and is stored in the storage unit 404, and determines whether they match. If authentication is successful, that is, if it is determined that the first authentication information and the user's fingerprint information match, the process proceeds to step S15. If authentication is unsuccessful, that is, if it is determined that the first authentication information and the user's fingerprint information do not match, the process ends. If two or more sets of fingerprint information are stored in the storage unit 404, the first authentication process is performed for all of the fingerprint information.

[0075] Next, in step S15, a location image for performing a second authentication is displayed on the pixel unit 422. The location image includes an image indicating the location to be touched by the user, an image informing the user of the touch location, and text information prompting the user to touch.

[0076] Specifically, the control unit 401 generates image data including a position image and outputs it to the pixel unit 422, so that an image based on the image data is displayed on the pixel unit 422. The area where the position image is displayed is the area where second authentication information is acquired using the sensor unit 403. In this specification, the area where second authentication information is acquired may be referred to as the second area. The user can perform second authentication by touching the second area 427. Figure 6A shows an image 428 displayed in the second area 427 and a finger 430 about to touch the second area 427.

[0077] Figure 6A shows an example where Image 428 includes an illustration resembling a fingerprint, along with the text "Touch Here" to prompt the user to touch it. By adding text information in addition to the illustration, the location can be clearly indicated to the user.

[0078] As shown in Image 428, it is also possible to display not only the touch location but also image or text information specifying the finger to touch. For example, text information such as "Please touch with your middle finger" can be displayed, and in the subsequent second authentication process, authentication can be performed using the fingerprint information of the middle finger. The finger specified can also be randomly changed each time the process is performed, just like the touch location.

[0079] Figure 6A shows a configuration in which a second region 427 is provided within the pixel portion 422, that is, a configuration in which the pixel portion 422 has an overlapping region with the second region 427. However, the present invention is not limited to this. The second region may be provided outside the pixel portion 422. By providing the second region 427 within the pixel portion 422, the bezel of the electronic device 420 can be reduced.

[0080] Although Figure 6A shows a configuration in which the image 428 is displayed in the second region 427, the present invention is not limited to this. The image 428 may not be displayed in the second region 427, and the display element 405 in the second region 427 may be lit to indicate the second region 427 to the user.

[0081] Next, in step S16, the sensor unit 403 is used to acquire second authentication information. The second authentication information is output from the sensor unit 403 to the control unit 401 as image data (second image data) captured by the sensor unit 403. Figure 6B shows an example of the captured fingerprint image data (second image data) as the second authentication information 453.

[0082] Next, in step S17, the authentication unit 407 performs a second authentication process. Specifically, the authentication unit 407 compares the second authentication information (second image data) output from the sensor unit 403 with the user's fingerprint information that has been registered in advance and is stored in the storage unit 404, and determines whether they match. If authentication is successful, the process proceeds to step S18. If authentication is unsuccessful, the process ends. If two or more fingerprint records are stored in the storage unit 404, the second authentication process is performed for all of them.

[0083] In step S18, the control unit 401 transitions the system of the electronic device 420 to an unlocked state (including putting it into a logged-in state).

[0084] The above is an explanation of the flowchart shown in Figure 2.

[0085] An electronic device 420, according to one aspect of the present invention, can perform a first authentication by acquiring first authentication information using a light-receiving element 406, and further perform a second authentication by acquiring second authentication information using a sensor unit 403. By using multiple different authentication methods, security can be made extremely high. For example, even if a malicious user were to illegally obtain the fingerprint information of the true user (owner) and use the electronic device 420, unauthorized use can be effectively prevented.

[0086] Although an example has been shown in which the first region 425 and the second region 427 are different, the present invention is not limited to this. The first region 425 and the second region 427 may be in the same position. The first region 425 and the second region 427 may be the same size. Furthermore, the finger used for the first authentication and the finger used for the second authentication may be the same or different.

[0087] If the same finger is used for the first authentication and the same finger is used for the second authentication, it is preferable that the first area 425 and the second area 427 are in the same position. By configuring the system to perform the first and second authentications at the same position, the user can perform the first and second authentications while keeping one finger touching the pixel area 422, thereby improving the operability of the electronic device 420.

[0088] If the fingers used for the first authentication and the fingers used for the second authentication are different, the first region 425 and the second region 427 can be in different positions. By using different fingers for the first and second authentication, a highly secure electronic device 420 can be created. Preferably, the position of the first region 425 can be arbitrarily set by the user. For example, as shown in Figure 5A, the first authentication can be performed with the index finger of the right hand, and as shown in Figure 7A, the second authentication can be performed with the thumb of the left hand. By allowing the user to arbitrarily set the position of the first region 425, a highly operable electronic device 420 can be created. Figure 7B shows an example of captured fingerprint image data (second image data) as the second authentication information 453.

[0089] An electronic device 420 according to one aspect of the present invention can be a highly secure display device by performing multi-stage authentication (hereinafter also referred to as multi-stage authentication) consisting of a first authentication and a second authentication. In an electronic device 420 according to one aspect of the present invention, for example, first authentication information acquired by a pixel unit 422 having the function of an optical sensor can be used for the first authentication, and second authentication information acquired by a sensor unit 403 that applies an ultrasonic sensor can be used for the second authentication. In an electronic device 420 according to one aspect of the present invention, security can be further enhanced by performing authentication using multiple different methods.

[0090] Although Figure 2 shows a configuration in which the second authentication is performed after the first authentication, the present invention is not limited to this. The first authentication may be performed after the second authentication. In this case, for example, steps S12 to S14 related to the first authentication can be performed after steps S15 to S17 related to the second authentication. Alternatively, steps S12 to S14 related to the first authentication and steps S15 to S17 related to the second authentication may be performed in parallel.

[0091] When the first region 425 and the second region 427 are in the same position, the electronic device 420 can generate a composite image by adding the first image data acquired in the first region 425 and the second image data acquired in the second region 427. For example, the first image acquired by the pixel unit 422 includes color information of the object, and the second image acquired by the sensor unit 403, which uses an ultrasonic sensor, includes three-dimensional information of the object. By adding the first image and the second image, a color three-dimensional image can be obtained. The electronic device 420, which is one aspect of the present invention, can also function as a color three-dimensional scanner. By having the above configuration, a multi-functional electronic device can be made.

[0092] <Example of authentication method 2> An example of an authentication method different from the one shown in Figure 2 will be explained. A flowchart illustrating the operation of the authentication method is shown in Figure 8.

[0093] First, processing begins. At this time, the system of the electronic device 420 is locked, and the functions that the user can perform are limited (including the logout and logoff states).

[0094] In step S11, user operation on the electronic device 420 is detected. Since step S11 can be found in the previous description, a detailed explanation is omitted here.

[0095] Next, in step S21, image 426 is displayed in the first region 425. Figure 9 shows an example of displaying image 426 in the first region 425. A detailed explanation of image 426 is omitted as it can be found in the description of image 428 mentioned above.

[0096] Next, in step S22, the display element 405 of the first region 425 is lit. The user can perform the first authentication by touching the first region 425. A detailed explanation of step S22 is omitted as it can be found in the description of step S12. In addition, in step S22, all the display elements 405 of the pixel section 422 may be lit.

[0097] For steps S13 through S18, please refer to the description in <Example of Authentication Method 1>, and therefore a detailed explanation will be omitted.

[0098] The above is an explanation of the flowchart shown in Figure 8.

[0099] <Example of authentication method 3> An example of an authentication method different from the one shown in Figure 2 will be explained. A flowchart of the operation of the authentication method is shown in Figure 10. The flowchart shown in Figure 10 differs from the flowchart shown in Figure 2 mainly in that it does not have step S15.

[0100] First, processing begins. At this time, the system of the electronic device 420 is locked, and the functions that the user can perform are limited (including the logout and logoff states).

[0101] Steps S11 through S14 can be described in Figure 2, so a detailed explanation will be omitted.

[0102] Next, in step S16, the sensor unit 403 is used to acquire second authentication information. The second authentication information is output from the sensor unit 403 to the control unit 401 as image data (second image data) captured by the sensor unit 403.

[0103] Figure 11A shows a second region 427 outside the pixel region 422, and illustrates how a fingerprint is captured as second image data by touching the second region 427 with a finger 430. Alternatively, a display 429 indicating a position for second authentication may be provided in the second region 427. The display 429 may include a graphic, text, or the like indicating a position for the user to touch.

[0104] Figure 11A shows a configuration in which a second region 427 is provided outside the pixel portion 422 on the surface (display surface) of the electronic device 420, that is, a configuration in which the pixel portion 422 does not have an area that overlaps with the second region 427. However, the present invention is not limited to this. As shown in Figure 11B, the second region 427 may be provided on the surface of the electronic device 420 facing the pixel portion 422 (the surface facing the display surface). When the second region 427 is provided on the surface of the electronic device 420 facing the pixel portion 422, the pixel portion 422 may have an area that overlaps with the second region 427. Since it is not necessary to provide a second region 427 outside the pixel portion 422 on the surface (display surface) of the electronic device 420, the bezel of the electronic device 420 can be made smaller.

[0105] Figure 11B shows a configuration in which the second region 427 is provided on the surface facing the pixel region 422, but the present invention is not limited to this. For example, the second region 427 may be provided on a surface of the electronic device 420 that does not have a pixel region 422 (for example, one or more of the top surface, bottom surface, and side surface of the electronic device 420). Alternatively, the pixel region 422 (first region 425) may be provided on one or more of the surface facing the display surface of the electronic device 420, the top surface, the bottom surface, and side surface. With such a configuration, the first and second authentications can be performed at any position on the electronic device 420, resulting in a highly convenient electronic device.

[0106] For steps S16 through S18, please refer to the description in Figure 2, and therefore a detailed explanation will be omitted.

[0107] The above is an explanation of the flowchart shown in Figure 10.

[0108] <Example of display device configuration 2> A configuration example different from the aforementioned display device 400 will now be described. Figure 12 shows a block diagram of a display device 400A, which is one aspect of the present invention. The display device 400A differs from the aforementioned display device 400 mainly in that the pixel section 402 has a touch sensor 408.

[0109] The touch sensor 408 has the function of detecting when the pixel unit 402 is touched, acquiring the touch location information, and outputting it to the control unit 401.

[0110] The control unit 401 has the function of processing the position information of the detected object input from the touch sensor 408. Furthermore, when the system of the display device 400A is in a locked state, and a touch operation is detected by the touch sensor 408 and information of the touched position is output, the control unit 401 has the function of generating image data and outputting it to the pixel unit 402 so as to illuminate the display element 405 at the touched position. In addition, it has the function of requesting the pixel unit 402 to perform fingerprint imaging while the display element 405 is illuminated.

[0111] The control unit 401 may have a function to generate image data including an image indicating a position to be touched by the user (position image) when the system of the display device 400A is locked, and output it to the pixel unit 402. The pixel unit 402 also has a function to acquire position information of a detected object such as a finger using the touch sensor 408 and output it to the control unit 401.

[0112] It is preferable that the pixel portion 402 can acquire fingerprint information of the touching finger at any position on the pixel portion 402. In other words, it is preferable that the range in which the touch sensor 408 functions on the pixel portion 402 and the range in which fingerprint information can be acquired coincide or roughly coincide.

[0113] <Example of authentication method 4> An example of an authentication method for the aforementioned display device 400A will now be explained. A flowchart of the operation of the authentication method using the display device 400A is shown in Figure 13. Figure 14A shows the electronic device 420A to which the display device 400A is applied. The electronic device 420A has a housing 421 and a pixel unit 422. The electronic device 420A has the aforementioned control unit 401, sensor unit 403 and storage unit 404 within the housing 421. The aforementioned pixel unit 402 can be applied to the pixel unit 422.

[0114] First, the process begins. At this time, the system of electronic device 420A is locked.

[0115] In step S31, it is detected whether or not a touch has occurred on the pixel portion 422. Touch detection is performed by the touch sensor 408. If a touch is detected, the process proceeds to step S32. Step S31 is repeated until a touch is detected. If no touch is detected for a certain period of time, or if a different location is touched, the process is terminated.

[0116] In step S32, the position information of the touch location is acquired. The position information is output from the touch sensor 408 to the control unit 401.

[0117] In step S33, based on the position information, the display elements 405 located at the touch position and its vicinity are lit up. The touch position and its vicinity can be designated as the first region 425. At this time, the control unit 401 generates image data in which the first region 425 is bright (high gradation value) and the other parts are dark (low gradation value), and outputs this to the pixel unit 422, so that an image based on the image data is displayed on the pixel unit 422.

[0118] In step S33, the first region 425 may be illuminated (lit up), while the other parts are turned off. Alternatively, any image may be displayed in regions other than the first region 425.

[0119] The area in which the display element 405 is illuminated (first area 425) is preferably an area that is hidden by a finger. When a finger touches the screen, the contact surface of the finger is located inside the contour of the finger as seen by the user, and the projected area of ​​the finger on the screen is larger than the contact area of ​​the finger. Therefore, the illuminated area can be 50% to 150%, preferably 70% to 130%, and more preferably 80% to 120%, when the contact area is set to 100%. If the illuminated area is less than 50%, the fingerprint information obtained by imaging may be insufficient, potentially reducing the accuracy of authentication. On the other hand, if the illuminated area exceeds 150%, there is a risk that the light source may be directly visible to the user.

[0120] The area that lights up may be defined as a circle with radius r centered on the touch position, and the value of radius r can be set in advance. Since the size and shape of fingers vary depending on the user's age, gender, and physique, the radius r of the circle that defines the area that lights up may be set by the user.

[0121] Figure 14A shows the area where a touch is detected by the touch sensor 408 and its vicinity designated as the first region 425, and the display element 405 of the first region 425 is illuminated. Figure 14B shows the first region 425 with hatching applied, with the finger 430 transparent and only the outline shown as a dashed line, as in Figure 14A. As shown in Figures 14A and 14B, the brightly illuminated first region 425 is hidden by the finger 430 and is difficult for the user to see. Therefore, fingerprint authentication can be performed without causing stress to the user. Furthermore, the electronic device 420A can perform fingerprint authentication at any position within the pixel section 422.

[0122] For steps S14 through S18, please refer to the description in Figure 2; therefore, a detailed explanation will be omitted.

[0123] The above is an explanation of the flowchart shown in Figure 13.

[0124] <Example of electronic device configuration> Schematic diagrams of the electronic device 420 are shown in Figures 15A to 16D. Figures 15A to 16D are cross-sectional views along the dashed line AB shown in Figure 3A. In addition, the first region 425 and the second region 427 are indicated by arrows in Figures 15A to 16D, respectively.

[0125] The electronic device 420 includes a housing 421, a layer 441, and a layer 443. Layer 441 has a pixel section 422. Layer 443 has a sensor section 403. A control unit 401 and a storage unit 404 can be provided in the internal space 445 of the housing 421. The control unit 401 and the storage unit 404 may also be provided in layer 441 or layer 443. Although not shown, electronic components such as a communication antenna and a storage battery can also be provided in the space 445.

[0126] Figure 15A shows an example in which the first region 425 is provided across the entire surface of the pixel portion 422, and the second region 427 is provided on a part of the pixel portion 422. In other words, there is an overlapping region between the first region 425 and the second region 427. In the configuration shown in Figure 15A, the first authentication information can be acquired at any position on the pixel portion 422.

[0127] Figure 15B shows an example in which the first region 425 is provided in a part of the pixel section 422 and the second region 427 is provided in a part of the pixel section 422. By providing the first region 425 in a part of the pixel section 422, only a part of the display element 405 lights up, thus reducing the power consumption of the electronic device 420. Although Figure 15B shows a configuration in which the first region 425 and the second region 427 do not overlap, as shown in Figure 15C, a configuration in which the first region 425 and the second region 427 overlap is also possible.

[0128] Figure 15D shows an example where the first region 425 and the second region 427 are located in the same position. By placing the first region 425 and the second region 427 in the same position, the user can acquire the first authentication information and the second authentication information while keeping a finger touching the pixel portion 422, thereby improving the operability of the electronic device 420.

[0129] Figures 15A to 15D show a configuration in which a second region 427 is provided in the pixel portion 422, and second authentication information is acquired within the pixel portion 422. It is preferable that the layer 443 having the sensor portion 403 is fixed to the layer 441 having the pixel portion 422. For example, layer 443 is fixed to layer 441 by an adhesive layer (not shown). It is also preferable that there is no space between layer 443 and layer 441. By having a configuration in which there is no space (air) between layer 443 and layer 441, when an ultrasonic fingerprint sensor is used in the sensor portion 403, the attenuation of ultrasonic waves by air can be suppressed, and the acquisition of second authentication information can be performed with high sensitivity.

[0130] Figure 16A shows an example in which the first region 425 is provided across the entire surface of the pixel portion 422, and the second region 427 is provided outside the pixel portion 422. As shown in Figure 16B, the first region 425 may be provided in part of the pixel portion 422. Figures 16A and 16B show a configuration in which the first region 425 and the second region 427 do not overlap, and in which the acquisition of the first authentication information and the second authentication information are performed on the same surface (display surface) as the pixel portion 422 of the electronic device 420.

[0131] Although Figures 16A and 16B show an example of a configuration in which layer 443 is exposed, the present invention is not limited to this. Layer 443 may be provided inside the housing 421, and if layer 443 is provided inside the housing 421, it is preferable that layer 443 is fixed to the housing 421. Layer 443 is fixed to the housing 421 by an adhesive layer (not shown). It is also preferable that there is no space between layer 443 and housing 421. By providing a configuration in which there is no space (air) between layer 443 and housing 421, when an ultrasonic fingerprint sensor is used in the sensor unit 403, the attenuation of ultrasonic waves by air can be suppressed, and the acquisition of the second authentication information can be performed with high sensitivity.

[0132] Figure 16C shows an example in which the first region 425 is provided over the entire surface of the pixel portion 422, and the second region 427 is provided on the surface of the electronic device 420 facing the pixel portion 422 (the surface facing the display surface). As shown in Figure 16D, the first region 425 may be provided on a part of the pixel portion 422. Figures 16C and 16D show a configuration in which the first authentication information is acquired on the same surface (display surface) as the pixel portion 422 of the electronic device 420, and the second authentication information is acquired on the surface facing the pixel portion 422 (the surface facing the display surface).

[0133] In the configuration shown in Figures 16C and 16D, there may be a space (air) between layer 443 and layer 441. Although Figures 16C and 16D show an example of a configuration in which layer 443 is exposed, the present invention is not limited to this. Layer 443 may be provided inside the housing 421, and if layer 443 is provided inside the housing 421, it is preferable that layer 443 is fixed to the housing 421. Layer 443 is fixed to the housing 421 by an adhesive layer (not shown). It is also preferable that there is no space between layer 443 and the housing 421.

[0134] The above is an explanation of an example of an electronic device configuration.

[0135] Furthermore, authentication methods, processing methods, operation methods, behavioral methods, or display methods, etc., performed by an electronic device according to one aspect of the present invention can be described as a program, for example. For example, a program describing an authentication method, processing method, operation method, behavioral method, or display method, etc., performed by the electronic device 420, etc., as exemplified above, can be stored in a non-temporary storage medium and read and executed by the arithmetic unit, etc., of the control unit 401 of the electronic device 420. In other words, a program for causing hardware to execute the authentication method, behavioral method, etc., as exemplified above, and a non-temporary storage medium in which said program is stored are aspects of the present invention.

[0136] The configuration examples illustrated in this embodiment, and the corresponding drawings, etc., can be appropriately combined with other configuration examples or drawings, etc., at least in part.

[0137] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0138] (Embodiment 2) In this embodiment, a display device according to one aspect of the present invention will be described.

[0139] A pixel portion of a display device according to one aspect of the present invention includes an light-emitting element and a light-receiving element.

[0140] A light-emitting / receiving device can be fabricated by combining an organic EL element, which is the light-emitting element, and an organic photodiode, which is the light-receiving element. For example, a light-emitting / receiving device can be fabricated by adding an active layer of an organic photodiode to the stacked structure of an organic EL element. Furthermore, when fabricating a light-emitting / receiving device by combining an organic EL element and an organic photodiode, the number of film deposition steps can be suppressed by depositing layers that can have a common structure with the organic EL element in a single process.

[0141] For example, one of a pair of electrodes (the common electrode) can be a common layer for both the light-receiving and light-emitting elements. Alternatively, it is preferable that at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer be a common layer for both the light-receiving and light-emitting elements. Furthermore, the configuration of the light-receiving and light-emitting elements can be identical except for the presence or absence of the active layer of the photodetector. In other words, a light-receiving and light-emitting element can be fabricated simply by adding the active layer of the photodetector to the light-emitting element. By having a common layer for both the light-receiving and light-emitting elements, the number of film deposition cycles and masks can be reduced, thereby reducing the manufacturing process and cost of the display device. Additionally, a display device having a light-receiving and light-emitting element can be fabricated using existing manufacturing equipment and methods for display devices.

[0142] Furthermore, the layers of a light-receiving element may have different functions depending on whether the element is functioning as a light-receiving element or a light-emitting element. In this specification, the components are referred to based on their function when the element is functioning as a light-emitting element. For example, a hole injection layer functions as a hole injection layer when the element is functioning as a light-emitting element, and as a hole transport layer when the element is functioning as a light-receiving element. Similarly, an electron injection layer functions as an electron injection layer when the element is functioning as a light-emitting element, and as an electron transport layer when the element is functioning as a light-receiving element.

[0143] Thus, the display device of this embodiment has a pixel section containing a light-receiving element and a light-emitting element. Specifically, the light-receiving element and the light-emitting element are arranged in a matrix in the pixel section. Therefore, in addition to the function of displaying an image, the pixel section also has one or both of the functions of imaging and sensing.

[0144] The pixel portion can be used in image sensors, touch sensors, etc. In other words, by detecting light with the pixel portion, it is possible to capture an image or detect the approach or contact of an object (finger, pen, etc.). Furthermore, the display device of this embodiment can utilize the light-emitting element as the light source of the sensor. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced.

[0145] In the display device of this embodiment, when an object reflects the light emitted by the light-emitting element of the pixel, the light-receiving element can detect the reflected light, making it possible to perform imaging, touch (contact or proximity) detection, etc., even in dark places.

[0146] The display device of this embodiment has the function of displaying an image using a light-emitting element and a light-receiving element. In other words, the light-emitting element and the light-receiving element function as display elements.

[0147] It is preferable to use EL elements such as OLEDs (Organic Light Emitting Diodes) and QLEDs (Quantum-dot Light Emitting Diodes) as light-emitting elements. Examples of light-emitting materials in EL elements include fluorescent materials, phosphorescent materials, inorganic compounds (such as quantum dot materials), and thermally activated delayed fluorescence (TADF) materials. In addition, LEDs such as microLEDs (Light Emitting Diodes) can also be used as light-emitting elements.

[0148] The display device of this embodiment has the function of detecting light using a light-receiving element. The light-receiving element can detect light with a shorter wavelength than the light it emits itself.

[0149] When light-emitting and receiving elements are used as an image sensor, the display device of this embodiment can capture images using these elements. For example, the display device of this embodiment can be used as a scanner.

[0150] For example, an image sensor can be used to acquire data such as fingerprints and palm prints. In other words, a biometric authentication sensor can be built into the display device of this embodiment. By having the display device build in a biometric authentication sensor, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided in the display device, making it possible to miniaturize and lighten the electronic device.

[0151] By using an image sensor, data such as the user's facial expressions, eye movements, or changes in pupil diameter can be acquired. By analyzing this data, information about the user's physical and mental state can be obtained. Based on this information, the output content of either the display or the sound, or both, can be changed to ensure that the user can use the device safely, for example, in VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality) devices.

[0152] When the light-emitting and receiving element is used as a touch sensor, the display device of this embodiment can detect the approach or contact of an object using the light-emitting and receiving element.

[0153] A light-emitting / receiving element functions as a photoelectric conversion element that detects light incident on it and generates an electric charge. The amount of charge generated is determined based on the amount of incident light.

[0154] A light-receiving element can be fabricated by adding an active layer for a photodetector to the above-described configuration of the light-receiving element.

[0155] For example, the active layer of a pn-type or pin-type photodiode can be used as the light-emitting / receiving element.

[0156] In particular, it is preferable to use an organic photodiode with an active layer containing an organic compound as the light-emitting and receiving element. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0157] Figures 17A to 17D show cross-sectional views of a display device according to one embodiment of the present invention.

[0158] The display device 350A shown in Figure 17A has a layer 353 having an light-emitting and receiving element, and a layer 357 having an light-emitting element, between a substrate 351 and a substrate 359.

[0159] The display device 350B shown in Figure 17B has a layer 353 having an light-emitting / receiving element, a layer 355 having a transistor, and a layer 357 having an light-emitting element between substrate 351 and substrate 359.

[0160] Display devices 350A and 350B are configured such that green (G) light and blue (B) light are emitted from a light-emitting layer 357, and red (R) light is emitted from a light-receiving layer 353. In one embodiment of the present invention, the color of the light emitted by the light-receiving layer 353 is not limited to red.

[0161] The light-receiving element included in the layer 353, which has a light-receiving element, can detect light incident from outside the display device 350A or the display device 350B. The light-receiving element can detect, for example, one or both of green (G) light and blue (B) light.

[0162] A display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-receiving element or one light-emitting element. For example, a pixel can be configured to have three subpixels (three colors: R, G, B, or three colors: yellow (Y), cyan (C), and magenta (M)), or four subpixels (four colors: R, G, B, and white (W), or four colors: R, G, B, and Y). At least one subpixel has a light-receiving element. Light-receiving elements may be provided in all pixels or in some pixels. Furthermore, a single pixel may have multiple light-receiving elements.

[0163] The transistor-containing layer 355 includes, for example, a transistor electrically connected to the light-emitting / receiving element, and another transistor electrically connected to the light-emitting element. The transistor-containing layer 355 may further include wiring, electrodes, terminals, capacitance, resistors, and the like.

[0164] A display device according to one aspect of the present invention may have a function to detect an object such as a finger that is in contact with the display device (Figure 17C). Alternatively, it may have a function to detect an object that is approaching (but not in contact with) the display device (Figure 17D). For example, as shown in Figures 17C and 17D, when a finger 352 that is in contact with or approaching the display device 350B reflects light emitted by a light-emitting element in a layer 357 having a light-emitting element, a light-receiving element in a layer 353 having a light-receiving element detects the reflected light. This makes it possible to detect that a finger 352 is in contact with or approaching the display device 350B.

[0165] <Pixel> Figures 17E to 17G and 18A to 18D show examples of pixels. Note that the arrangement of subpixels is not limited to the order shown. For example, the positions of subpixels 311B and 311G may be reversed.

[0166] The pixels shown in Figure 17E employ a stripe arrangement. The pixels include a sub-pixel 311SR that emits red light and has a light-receiving function, a sub-pixel 311G that emits green light, and a sub-pixel 311B that emits blue light. In a display device in which a pixel consists of three sub-pixels R, G, and B, a display device in which the pixel has a light-receiving function can be manufactured by replacing the light-emitting element used in the R sub-pixel with a light-receiving element.

[0167] The pixels shown in Figure 17F utilize a matrix arrangement. The pixels include a sub-pixel 311SR that emits red light and has a light-receiving function, a sub-pixel 311G that emits green light, a sub-pixel 311B that emits blue light, and a sub-pixel 311W that emits white light. Even in a display device where the pixels consist of four sub-pixels R, G, B, and W, a display device with a light-receiving function in the pixels can be manufactured by replacing the light-emitting element used in the R sub-pixel with a light-receiving element.

[0168] The pixels shown in Figure 17G utilize a PenTile arrangement. In Figure 17G, each pixel has subpixels that emit two different colored light in different combinations. The upper left and lower right pixels in Figure 17G have a subpixel 311SR that emits red light and has a light-receiving function, and a subpixel 311G that emits green light. The lower left and upper right pixels in Figure 17G have a subpixel 311G that emits green light and a subpixel 311B that emits blue light. The shape of the subpixels shown in Figure 17G indicates the shape of the upper surface of the light-emitting or light-receiving element of that subpixel.

[0169] The pixel shown in Figure 18A has a sub-pixel 311SR that emits red light and has a light-receiving function, a sub-pixel 311G that emits green light, and a sub-pixel 311B that emits blue light. Sub-pixel 311SR is located in a different column from sub-pixels 311G and 311B. Sub-pixels 311G and 311B are arranged alternately in the same column, with one located in an odd-numbered row and the other in an even-numbered row. Note that the sub-pixels located in a different column from the sub-pixels of other colors are not limited to red (R), but may also be green (G) or blue (B).

[0170] Figure 18B shows two pixels, each composed of three subpixels enclosed by dotted lines. The pixels shown in Figure 18B have a subpixel 311SR that emits red light and has light-receiving capabilities, a subpixel 311G that emits green light, and a subpixel 311B that emits blue light. In the left pixel shown in Figure 18B, subpixel 311G is located in the same row as subpixel 311SR, and subpixel 311B is located in the same column as subpixel 311SR. In the right pixel shown in Figure 18B, subpixel 311G is located in the same row as subpixel 311SR, and subpixel 311B is located in the same column as subpixel 311G. In the pixel layout shown in Figure 18B, subpixels 311SR, 311G, and 311B are repeatedly arranged in both odd and even rows, and in each column, subpixels of different colors are arranged in odd and even rows.

[0171] Figure 18C shows a modified version of the pixel arrangement shown in Figure 17G. The upper left and lower right pixels in Figure 18C have a sub-pixel 311SR that emits red light and has a light-receiving function, and a sub-pixel 311G that emits green light. The lower left and upper right pixels in Figure 18C have a sub-pixel 311SR that emits red light and has a light-receiving function, and a sub-pixel 311B that emits blue light.

[0172] In Figure 17G, each pixel is provided with a sub-pixel 311G that emits green light. On the other hand, in Figure 18C, each pixel is provided with a sub-pixel 311SR that emits red light and has a light-receiving function. Because each pixel is provided with a sub-pixel with a light-receiving function, the configuration shown in Figure 18C can capture images with higher resolution compared to the configuration shown in Figure 17G. This can improve the accuracy of, for example, biometric authentication.

[0173] The top surface shapes of the light-emitting and light-receiving elements are not particularly limited and can be circles, ellipses, polygons, polygons with rounded corners, etc. Figure 17G shows an example where the top surface shape of the light-emitting element of the sub-pixel 311G is circular, and Figure 18C shows an example where it is square. The top surface shapes of the light-emitting and light-receiving elements of each color may be different from each other, or they may be the same for some or all colors.

[0174] The aperture ratios of the subpixels of each color may be different from each other, or they may be the same for some or all of the colors. For example, the aperture ratio of the subpixels provided in each pixel (subpixel 311G in Figure 17G, subpixel 311SR in Figure 18C) may be smaller than the aperture ratio of the subpixels of other colors.

[0175] Figure 18D shows a modified version of the pixel arrangement shown in Figure 18C. Specifically, the configuration in Figure 18D is obtained by rotating the configuration in Figure 18C by 45°. In Figure 18C, it was explained that one pixel is composed of two subpixels, but as shown in Figure 18D, it can also be seen as one pixel being composed of four subpixels.

[0176] In Figure 18D, we explain that one pixel is composed of four subpixels enclosed by dotted lines. One pixel has two subpixels 311SR, one subpixel 311G, and one subpixel 311B. In this way, by having multiple subpixels with light-receiving functions in one pixel, imaging can be performed with high resolution. Therefore, the accuracy of biometric authentication can be improved. For example, the resolution of the image can be made to be the square root of 2 times the resolution of the display.

[0177] A display device to which the configuration shown in Figure 18C or Figure 18D is applied has p (where p is an integer greater than or equal to 2) first light-emitting elements, q (where q is an integer greater than or equal to 2) second light-emitting elements, and r (where r is an integer greater than p and greater than q) receiving light-emitting elements. p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting elements emits green light, and the other emits blue light. The receiving light-emitting elements emit red light and have a light-receiving function.

[0178] For example, when performing touch detection using a light-receiving element, it is preferable that the light emitted from the light source is not easily visible to the user. Since blue light is less visible than green light, it is preferable to use a light-emitting element that emits blue light as the light source. Therefore, it is preferable that the light-receiving element has the function of receiving blue light and converting it into an electrical signal.

[0179] As described above, various pixel arrangements can be applied to the display device according to one aspect of the present invention.

[0180] In this embodiment, since the display device does not require changing the pixel arrangement to incorporate a light-receiving function into the pixels, it is possible to add either or both an imaging function and a sensing function to the pixel portion without reducing the aperture ratio and resolution.

[0181] <Light-emitting element> Figures 19A to 19E show examples of stacked structures of light-emitting and receiving devices.

[0182] The light-emitting and receiving device has at least an active layer and a light-emitting layer between a pair of electrodes.

[0183] The light-emitting and receiving device may further include layers other than the active layer and the light-emitting layer, such as a material with high hole injection properties, a material with high hole transport properties, a material with high hole blocking properties, a material with high electron transport properties, a material with high electron injection properties, a material with high electron blocking properties, or a bipolar material (a material with high electron transport and hole transport properties).

[0184] The light-emitting and receiving devices shown in Figures 19A to 19C each include a first electrode 180, a hole injection layer 181, a hole transport layer 182, an active layer 183, a light-emitting layer 193, an electron transport layer 184, an electron injection layer 185, and a second electrode 189, respectively.

[0185] Furthermore, the light-emitting and receiving elements shown in Figures 19A to 19C can be described as having an active layer 183 added to the light-emitting element. Therefore, by simply adding a step of forming the active layer 183 to the manufacturing process of the light-emitting element, the light-emitting and receiving elements can be formed in parallel with the formation of the light-emitting element. In addition, the light-emitting element and the light-emitting and receiving elements can be formed on the same substrate. Thus, imaging and sensing functions, or both, can be added to the pixel portion without significantly increasing the manufacturing process.

[0186] The stacking order of the light-emitting layer 193 and the active layer 183 is not limited. Figure 19A shows an example in which the active layer 183 is provided on the hole transport layer 182 and the light-emitting layer 193 is provided on the active layer 183. Figure 19B also shows an example in which the light-emitting layer 193 is provided on the hole transport layer 182 and the active layer 183 is provided on the light-emitting layer 193. Furthermore, the active layer 183 and the light-emitting layer 193 may be in contact with each other, as shown in Figures 19A and 19B.

[0187] As shown in Figure 19C, it is preferable that a buffer layer is sandwiched between the active layer 183 and the light-emitting layer 193. The buffer layer can be at least one of the following: a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole blocking layer, and an electron blocking layer. Figure 19C shows an example in which a hole transport layer 182 is used as the buffer layer.

[0188] By providing a buffer layer between the active layer 183 and the light-emitting layer 193, the transfer of excitation energy from the light-emitting layer 193 to the active layer 183 can be suppressed. Furthermore, the buffer layer can be used to adjust the optical path length (cavity length) of the micro-resonance (microcavity) structure. Therefore, a light-emitting / receiving device having a buffer layer between the active layer 183 and the light-emitting layer 193 can achieve high luminescence efficiency.

[0189] The light-emitting element shown in Figure 19D differs from the light-emitting elements shown in Figures 19A and 19C in that it does not have a hole transport layer 182. The light-emitting element does not necessarily have to have at least one of the hole injection layer 181, hole transport layer 182, electron transport layer 184, and electron injection layer 185. Furthermore, the light-emitting element may have other functional layers such as a hole blocking layer or an electron blocking layer.

[0190] The light-receiving element shown in Figure 19E differs from the light-receiving elements shown in Figures 19A to 19C in that it does not have an active layer 183 and a light-emitting layer 193, but has a layer 186 that serves as both a light-emitting layer and an active layer.

[0191] The layer 186, which serves as both the light-emitting layer and the active layer, can be a layer containing three materials: an n-type semiconductor that can be used in the active layer 183, a p-type semiconductor that can be used in the active layer 183, and a light-emitting substance that can be used in the light-emitting layer 193.

[0192] Furthermore, it is preferable that the lowest energy absorption band of the absorption spectrum of the mixed material of n-type and p-type semiconductors and the maximum peak of the emission spectrum (PL spectrum) of the luminescent material do not overlap, and it is even more preferable that they are sufficiently far apart.

[0193] In a light-receiving and light-emitting device, it is preferable to use a conductive film that transmits visible light on the electrode that extracts light, and to use a conductive film that reflects visible light on the electrode that does not extract light.

[0194] When driving a light-emitting / receiving device as a light-emitting element, the hole injection layer is a layer that injects holes from the anode into the light-emitting / receiving device. The hole injection layer is a layer containing a material with high hole injection properties. As a material with high hole injection properties, a composite material containing a hole transport material and an acceptor material (electron-accepting material), or an aromatic amine compound can be used.

[0195] When a light-emitting / receiving device is driven as a light-emitting element, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. When a light-emitting / receiving device is driven as a light-receiving element, the hole transport layer is a layer that transports holes generated in the active layer based on incident light to the anode. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2 Materials having a hole mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher hole transport capabilities than electron transport. Preferred hole transport materials are those with high hole transport capabilities, such as π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amines (compounds having an aromatic amine skeleton).

[0196] When a light-emitting element is driven as a light-emitting element, the electron transport layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron injection layer. When a light-emitting element is driven as a photodetector, the electron transport layer is a layer that transports electrons generated in the active layer based on incident light to the cathode. The electron transport layer is a layer containing an electron-transporting material. The electron-transporting material has a density of 1 × 10⁻¹⁶ -6 cm 2Materials having an electron mobility of / Vs or higher are preferred. However, other materials can also be used as long as they have higher electron transport capabilities than holes. Electron transport materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds containing nitrogen-containing heteroaromatic compounds.

[0197] When driving a light-emitting / receiving device as a light-emitting device, the electron injection layer is the layer that injects electrons from the cathode into the device. The electron injection layer is a layer containing a material with high electron-injection properties. The material with high electron-injection properties can be alkali metals, alkaline earth metals, or compounds thereof. The material with high electron-injection properties can also be a composite material containing an electron-transporting material and a donor material (electron-donating material).

[0198] The light-emitting layer 193 is a layer containing a light-emitting material. The light-emitting layer 193 may contain one or more types of light-emitting materials. The light-emitting material may be a material that exhibits a light emission color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red, as appropriate. In addition, a material that emits near-infrared light may be used as the light-emitting material.

[0199] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0200] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives.

[0201] Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton; organometallic complexes (especially iridium complexes) using phenylpyridine derivatives having electron-withdrawing groups as ligands; platinum complexes; and rare earth metal complexes.

[0202] The light-emitting layer 193 may contain one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material). One or more types of organic compounds can be hole-transporting materials and / or electron-transporting materials. Alternatively, one or more types of organic compounds may be bipolar materials or TADF materials.

[0203] The light-emitting layer 193 preferably comprises, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that readily forms an excitation complex. With such a configuration, light emission using ExTET (Exciplex-Triplet Energy Transfer), which is energy transfer from the excitation complex to the light-emitting substance (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an excitation complex that exhibits light emission overlapping with the wavelength of the lowest-energy absorption band of the light-emitting substance, energy transfer becomes smoother, and light emission can be efficiently obtained. This configuration enables high efficiency, low-voltage operation, and long lifespan of the light-emitting element simultaneously.

[0204] The combination of materials forming the excited complex is preferably such that the HOMO level (highest occupied orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also preferable that the LUMO level (lowest unoccupied orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV).

[0205] The formation of excited complexes can be confirmed, for example, by comparing the emission spectra of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectra of each individual material (or has a new peak on the longer wavelength side). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing differences in the transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delayed component than the transient PL lifetime of each individual material. Furthermore, the transient PL mentioned above can be read as transient electroluminescence (EL). That is, the formation of excited complexes can also be confirmed by comparing the transient EL of a hole-transporting material, an electron-transporting material, and a mixed film made by mixing these materials, and observing the differences in the transient response.

[0206] The active layer 183 contains a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer 193 and the active layer 183 can be formed by the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0207] As the n-type semiconductor material of the active layer 183, fullerene (e.g., C 60 , C 70, etc.), and electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerene has a shape similar to a soccer ball, and this shape is energetically stable. For fullerenes, both the HOMO level and the LUMO level are deep (low). Due to its deep LUMO level, fullerene has extremely high electron accepting property (acceptor property). Generally, similar to benzene, when π-electron conjugation (resonance) extends over a plane, the electron donating property (donor property) increases; however, since fullerene has a spherical shape, it exhibits high electron accepting property despite its extensively delocalized π-electrons. High electron accepting property can induce charge separation at high speed and efficiently, which is advantageous for a light-receiving element. C 60 , C 70 both have broad absorption bands in the visible light region, and in particular, C 70 has a larger π-electron conjugated system than C 60 , and also has a broad absorption band in the long-wavelength region, which is therefore preferable.

[0208] Examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, and the like.

[0209] Examples of p-type semiconductor materials contained in the active layer 183 include electron-donating organic semiconductor materials such as Copper(II) phthalocyanine (CuPc), Tetraphenyldibenzoperiflanthene (DBP), Zinc Phthalocyanine (ZnPc), Tin phthalocyanine (SnPc), and quinacridone.

[0210] Examples of materials for p-type semiconductors include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. Furthermore, examples of materials for p-type semiconductors include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0211] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0212] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0213] For example, the active layer 183 is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor.

[0214] The layer 186, which serves as both the light-emitting layer and the active layer, is preferably formed using the above-mentioned light-emitting material, n-type semiconductor, and p-type semiconductor.

[0215] The hole injection layer 181, hole transport layer 182, active layer 183, light-emitting layer 193, electron transport layer 184, electron injection layer 185, and the layer 186 which serves as both a light-emitting layer and an active layer may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. Each layer can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0216] In the following, the detailed configuration of the light-emitting and light-receiving elements in a display device according to one embodiment of the present invention will be described with reference to Figures 20 to 22.

[0217] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting element is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting element is formed, or a dual-emission type that emits light on both sides.

[0218] Figures 20 to 22 illustrate the concept using a top-emission type display device as an example.

[0219] <Configuration Example 1> The display device shown in Figures 20A and 20B has, on a substrate 151, a light-emitting element 347B that emits blue (B) light, a light-emitting element 347G that emits green (G) light, and a light-receiving element 347SR that emits red (R) light and has a light-receiving function, via a layer 355 having a transistor.

[0220] Figure 20A shows the case where the light-emitting element 347SR functions as a light-emitting element. In Figure 20A, an example is shown where the light-emitting element 347B emits blue light, the light-emitting element 347G emits green light, and the light-emitting element 347SR emits red light.

[0221] Figure 20B shows the case where the light-receiving element 347SR functions as a light-receiving element. Figure 20B shows an example in which the light-receiving element 347SR detects the blue light emitted by the light-emitting element 347B and the green light emitted by the light-emitting element 347G.

[0222] The light-emitting element 347B, the light-emitting element 347G, and the light-receiving element 347SR each have a pixel electrode 191 and a common electrode 115. In this embodiment, the case in which the pixel electrode 191 functions as the anode and the common electrode 115 functions as the cathode will be described as an example.

[0223] In this embodiment, similar to the light-emitting element, the pixel electrode 191 functions as the anode and the common electrode 115 functions as the cathode in the light-receiving element 347SR. In other words, by driving the light-receiving element 347SR with a reverse bias applied between the pixel electrode 191 and the common electrode 115, the light-receiving element 347SR can detect light incident on it, generate an electric charge, and extract it as an electric current.

[0224] The common electrode 115 is used in common by the light-emitting element 347B, the light-emitting element 347G, and the light-receiving element 347SR.

[0225] The materials and film thickness of the pair of electrodes in the light-emitting element 347B, light-emitting element 347G, and light-receiving element 347SR can be made identical. This reduces the manufacturing cost of the display device and simplifies the manufacturing process.

[0226] The configuration of the display device shown in Figures 20A and 20B will be explained in detail.

[0227] The light-emitting element 347B has a buffer layer 192B, a light-emitting layer 193B, and a buffer layer 194B on the pixel electrode 191 in that order. The light-emitting layer 193B has a light-emitting material that emits blue light. The light-emitting element 347B has the function of emitting blue light.

[0228] The light-emitting element 347G has a buffer layer 192G, a light-emitting layer 193G, and a buffer layer 194G on the pixel electrode 191 in that order. The light-emitting layer 193G has a light-emitting material that emits green light. The light-emitting element 347G has the function of emitting green light.

[0229] The light-receiving element 347SR has a buffer layer 192R, an active layer 183, a light-emitting layer 193R, and a buffer layer 194R on the pixel electrode 191 in this order. The light-emitting layer 193R has a light-emitting material that emits red light. The active layer 183 has an organic compound that absorbs light with a shorter wavelength than red light (for example, one or both of green light and blue light). Note that the active layer 183 may also use an organic compound that absorbs ultraviolet light as well as visible light. The light-receiving element 347SR has the function of emitting red light. The light-receiving element 347SR has the function of detecting the light emission of at least one of the light-emitting elements 347G and 347B, and preferably has the function of detecting the light emission of both.

[0230] The active layer 183 preferably contains an organic compound that does not readily absorb red light and absorbs light with a shorter wavelength than red light. This allows the light-emitting / receiving element 347SR to have the function of efficiently emitting red light and the function of accurately detecting light with a shorter wavelength than red light.

[0231] The pixel electrode 191, buffer layer 192R, buffer layer 192G, buffer layer 192B, active layer 183, light-emitting layer 193R, light-emitting layer 193G, light-emitting layer 193B, buffer layer 194R, buffer layer 194G, buffer layer 194B, and common electrode 115 may each be a single-layer structure or a stacked structure.

[0232] In the display devices shown in Figures 20A and 20B, the buffer layer, active layer, and light-emitting layer are layers that are manufactured separately for each element.

[0233] Each buffer layer 192R, 192G, and 192B may have either a hole injection layer or a hole transport layer, or both. Furthermore, each buffer layer 192R, 192G, and 192B may have an electron blocking layer. Each buffer layer 194B, 194G, and 194R may have either a hole injection layer or an electron transport layer, or both. Furthermore, each buffer layer 194R, 194G, and 194B may have a hole blocking layer. For details on the materials of each layer constituting the light-emitting element, please refer to the above description of each layer constituting the light-receiving element. In this specification, buffer layers 192R, 192G, and 192B may be collectively referred to as buffer layer 192. Buffer layers 194R, 194G, and 194B may be collectively referred to as buffer layer 194.

[0234] <Configuration Example 2> As shown in Figures 21A and 21B, the light-emitting element 347B, light-emitting element 347G, and light-receiving element 347SR may have a common layer between the pair of electrodes. This allows the light-receiving element to be incorporated into the display device without significantly increasing the manufacturing process.

[0235] The light-emitting element 347B, light-emitting element 347G, and light-receiving element 347SR shown in Figure 21A have a common layer 112 and a common layer 114 in addition to the configuration shown in Figures 20A and 20B.

[0236] The light-emitting element 347B, light-emitting element 347G, and light-receiving element 347SR shown in Figure 21B differ from the configurations shown in Figures 20A and 20B in that they do not have buffer layers 192R, 192G, 192B and buffer layers 194R, 194G, 194B, but do have common layers 112 and 114.

[0237] The common layer 112 may have either a hole injection layer or a hole transport layer, or both. The common layer 114 may have either an electron injection layer or an electron transport layer, or both.

[0238] Common layer 112 and common layer 114 may each be a single-layer structure or a laminated structure.

[0239] <Configuration Example 3> The display device shown in Figure 22A is an example in which the stacked structure shown in Figure 19C is applied to the light-emitting / receiving element 347SR.

[0240] The light-receiving element 347SR has, in this order, a hole injection layer 181, an active layer 183, a hole transport layer 182R, a light-emitting layer 193R, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191.

[0241] The hole injection layer 181, electron transport layer 184, electron injection layer 185, and common electrode 115 are layers common to the light-emitting element 347G and the light-emitting element 347B.

[0242] The light-emitting element 347G has, in this order, a hole injection layer 181, a hole transport layer 182G, a light-emitting layer 193G, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191.

[0243] The light-emitting element 347B has, in this order, a hole injection layer 181, a hole transport layer 182B, a light-emitting layer 193B, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191.

[0244] In this embodiment, it is preferable that the light-emitting element of the display device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting element is an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other is an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting element, the light emitted from the light-emitting layer can be made to resonate between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0245] Furthermore, the semi-transparent / semi-reflective electrode can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode). In this specification, the reflective electrode, which functions as part of the semi-transparent / semi-reflective electrode, is sometimes referred to as a pixel electrode or common electrode, and the transparent electrode is sometimes referred to as an optical adjustment layer. However, the transparent electrode (optical adjustment layer) can also be said to have the function of a pixel electrode or common electrode.

[0246] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use electrodes in the light-emitting element that have a transmittance of 40% or more for both visible light (light with a wavelength of 400 nm or more and less than 750 nm) and near-infrared light (light with a wavelength of 750 nm or more and less than 1300 nm). Furthermore, the reflectance of the semi-transparent and semi-reflective electrodes for visible light and near-infrared light shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The reflectance of the reflective electrode for visible light and near-infrared light shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. Furthermore, the resistivity of these electrodes shall be 1 × 10⁻⁶ -2 A value of Ωcm or less is preferable.

[0247] The hole transport layers 182B, 182G, and 182R may each function as optical adjustment layers. Specifically, for the light-emitting element 347B, it is preferable to adjust the film thickness of the hole transport layer 182B so that the optical distance between the pair of electrodes is the optical distance that enhances blue light. Similarly, for the light-emitting element 347G, it is preferable to adjust the film thickness of the hole transport layer 182G so that the optical distance between the pair of electrodes is the optical distance that enhances green light. And for the light-receiving element 347SR, it is preferable to adjust the film thickness of the hole transport layer 182R so that the optical distance between the pair of electrodes is the optical distance that enhances red light. The layers used as optical adjustment layers are not limited to hole transport layers. Note that if the semi-transparent / semi-reflective electrode has a laminated structure of a reflective electrode and a transparent electrode, the optical distance between the pair of electrodes refers to the optical distance between the pair of reflective electrodes.

[0248] <Configuration Example 4> The display device shown in Figure 22B is an example in which the stacked structure shown in Figure 19D is applied to the light-emitting / receiving element 347SR.

[0249] The light receiving and emitting element 347SR comprises a hole injection layer 181, an active layer 183, a light emitting layer 193R, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191 in this order.

[0250] The hole injection layer 181, the electron transport layer 184, the electron injection layer 185, and the common electrode 115 are layers common to the light emitting element 347G and the light emitting element 347B.

[0251] The light emitting element 347G comprises a hole injection layer 181, a hole transport layer 182G, a light emitting layer 193G, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191 in this order.

[0252] The light emitting element 347B comprises a hole injection layer 181, a hole transport layer 182B, a light emitting layer 193B, an electron transport layer 184, an electron injection layer 185, and a common electrode 115 on the pixel electrode 191 in this order.

[0253] The hole transport layer is provided in the light emitting element 347G and the light emitting element 347B, and is not provided in the light receiving and emitting element 347SR. As described above, in addition to the active layer and the light emitting layer, there may be a layer provided only in one of the light emitting element and the light receiving and emitting element.

[0254] Hereinafter, the detailed structure of the display device according to one embodiment of the present invention will be described with reference to FIGS. 23 to 29.

[0255] <Display device 310A> Cross-sectional views of the display device 310A are shown in FIGS. 23A and 23B.

[0256] The display device 310A comprises a light emitting element 190B, a light emitting element 190G, and a light receiving and emitting element 190SR.

[0257] The light emitting element 190B comprises a pixel electrode 191, a buffer layer 192B, a light emitting layer 193B, a buffer layer 194B, and a common electrode 115. The light emitting element 190B has a function of emitting blue light 321B.

[0258] The light-emitting element 190G has a pixel electrode 191, a buffer layer 192G, a light-emitting layer 193G, a buffer layer 194G, and a common electrode 115. The light-emitting element 190G has the function of emitting green light 321G.

[0259] The light-receiving element 190SR has a pixel electrode 191, a buffer layer 192R, an active layer 183, a light-emitting layer 193R, a buffer layer 194R, and a common electrode 115. The light-receiving element 190SR has the function of emitting red light 321R and the function of detecting light 322.

[0260] Figure 23A shows the case where the light-emitting element 190SR functions as a light-emitting element. In Figure 23A, an example is shown where the light-emitting element 190B emits blue light, the light-emitting element 190G emits green light, and the light-emitting element 190SR emits red light.

[0261] Figure 23B shows the case where the light-receiving element 190SR functions as a light-receiving element. Figure 23B shows an example in which the light-receiving element 190SR detects the blue light emitted by the light-emitting element 190B and the green light emitted by the light-emitting element 190G.

[0262] The pixel electrode 191 is located on the insulating layer 214. The ends of the pixel electrode 191 are covered by partitions 216. Two adjacent pixel electrodes 191 are electrically insulated (or electrically isolated) from each other by the partitions 216.

[0263] The partition wall 216 can preferably be made of an organic insulating film. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins. The partition wall 216 is a layer that transmits visible light. As will be described in detail later, a partition wall that blocks visible light may be provided instead of the partition wall 216.

[0264] The display device 310A has a light-emitting element 190SR, a light-emitting element 190G, a light-emitting element 190B, and a transistor 342, etc., between a pair of substrates (substrate 151 and substrate 152).

[0265] The light-receiving element 190SR has the function of detecting light. Specifically, the light-receiving element 190SR is a photoelectric conversion element that receives light 322 incident from outside the display device 310A and converts it into an electrical signal. Light 322 can also be defined as light reflected by an object from the light emitted by one or both of the light-emitting elements 190G and 190B. In addition, light 322 may be incident on the light-receiving element 190SR through a lens.

[0266] The light-emitting element 190G and the light-emitting element 190B have the function of emitting visible light. Specifically, the light-emitting element 190G and the light-emitting element 190B are electroluminescent elements that emit light towards the substrate 152 when a voltage is applied between the pixel electrode 191 and the common electrode 115 (see light 321G and light 321B).

[0267] The buffer layer 192, the light-emitting layer 193, and the buffer layer 194 can also be called an organic layer (a layer containing an organic compound) or an EL layer. The pixel electrode 191 preferably has the function of reflecting visible light. The common electrode 115 has the function of transmitting visible light.

[0268] The pixel electrode 191 is electrically connected to the source or drain of the transistor 342 through an opening provided in the insulating layer 214. The transistor 342 has the function of controlling the driving of the light-emitting element or the light-receiving element.

[0269] Preferably, at least a portion of the circuit electrically connected to the light-emitting element 190SR is formed using the same material and process as the circuit electrically connected to the light-emitting elements 190G and 190B. This allows for a thinner display device and simplifies the manufacturing process compared to forming the two circuits separately.

[0270] It is preferable that the light-receiving element 190SR, the light-emitting element 190G, and the light-emitting element 190B are each covered with a protective layer 195. In Figure 23A, etc., the protective layer 195 is provided in contact with the common electrode 115. By providing the protective layer 195, it is possible to suppress the intrusion of impurities such as the light-receiving element 190SR and the light-emitting elements of each color, thereby improving the reliability of the light-receiving element 190SR and the light-emitting elements of each color. Furthermore, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142.

[0271] A light-shielding layer BM is provided on the surface of substrate 152 facing substrate 151. The light-shielding layer BM has openings at positions overlapping with the light-emitting elements 190G and 190B, and at positions overlapping with the light-receiving element 190SR. In this specification, the position overlapping with the light-emitting element 190G or 190B specifically refers to the position overlapping with the light-emitting region of the light-emitting element 190G or 190B. Similarly, the position overlapping with the light-receiving element 190SR specifically refers to the position overlapping with the light-emitting region and the light-receiving region of the light-receiving element 190SR.

[0272] As shown in Figure 23B, the receiving light-emitting element 190SR can detect light reflected by an object from the light-emitting element 190G or 190B. However, the light emitted from the light-emitting element 190G or 190B may be reflected within the display device 310A and incident on the receiving light-emitting element 190SR without passing through the object. The light-shielding layer BM can suppress the effects of such stray light. For example, if the light-shielding layer BM is not provided, the light 323 emitted by the light-emitting element 190G may be reflected by the substrate 152, and the reflected light 324 may incident on the receiving light-emitting element 190SR. By providing the light-shielding layer BM, the incident of reflected light 324 on the receiving light-emitting element 190SR can be suppressed. This reduces noise and increases the sensitivity of the sensor using the receiving light-emitting element 190SR.

[0273] The light-shielding layer BM can be formed using a material that blocks light emission from the light-emitting elements. The light-shielding layer BM preferably absorbs visible light. As the light-shielding layer BM, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light-shielding layer BM may be a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0274] <Display device 310B> The display device 310B shown in FIG. 24A differs from the display device 310A in that the light-emitting element 190G, the light-emitting element 190B, and the light-receiving and emitting element 190SR each do not include the buffer layer 192 and the buffer layer 194, but include the common layer 112 and the common layer 114. Note that in the following description of the display device, descriptions of configurations similar to those of the previously described display device may be omitted.

[0275] Note that the laminated structures of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving and emitting element 190SR are not limited to the configurations shown in the display devices 310A and 310B. For each element, for example, the laminated structures shown in FIGS. 19 to 22 can be appropriately applied.

[0276] <Display device 310C> The display device 310C shown in FIG. 24B differs from the display device 310B in that it does not include the substrate 151 and the substrate 152, but includes a substrate 153, a substrate 154, an adhesive layer 155, and an insulating layer 212.

[0277] The substrate 153 and the insulating layer 212 are bonded together by the adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by the adhesive layer 142.

[0278] The display device 310C is manufactured by transferring an insulating layer 212, a transistor 342, a light-receiving element 190SR, a light-receiving element 190G, and a light-receiving element 190B, etc., formed on a fabricated substrate, onto a substrate 153. It is preferable that both substrates 153 and 154 are flexible. This enhances the flexibility of the display device 310C. For example, it is preferable to use resin for both substrates 153 and 154.

[0279] Substrates 153 and 154 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 153 and 154 may be made of glass of a thickness sufficient to provide flexibility.

[0280] The substrate of the display device in this embodiment may be a film with high optical isotropy. Examples of films with high optical isotropy include triacetylcellulose (TAC, also called cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0281] In the following, a more detailed configuration of a display device according to one embodiment of the present invention will be described with reference to Figures 25 to 28.

[0282] <Display device 100A> Figure 25 shows a perspective view of the display device 100A, and Figure 26 shows a cross-sectional view of the display device 100A.

[0283] The display device 100A has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 25, substrate 152 is clearly indicated by a dashed line.

[0284] The display device 100A includes a pixel section 162, a circuit 164, wiring 165, etc. Figure 25 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Figure 25 can also be described as a display module having the display device 100A, the IC, and the FPC.

[0285] Circuit 164 can, for example, be a scan line drive circuit.

[0286] The wiring 165 has the function of supplying signals and power to the pixel unit 162 and the circuit 164. These signals and power are input to the wiring 165 from an external source via the FPC 172, or from the IC 173.

[0287] Figure 25 shows an example in which IC 173 is provided on the substrate 151 using the COG (Chip On Glass) method or COF (Chip On Film) method, etc. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100A and the display module may be configured without an IC. Alternatively, the IC may be mounted on an FPC using the COF method, etc.

[0288] Figure 26 shows an example of a cross-section obtained by cutting a portion of the region including the FPC 172, a portion of the region including the circuit 164, a portion of the region including the pixel portion 162, and a portion of the region including the edge of the display device 100A shown in Figure 25.

[0289] The display device 100A shown in Figure 26 has transistors 201, 205, 206, 207, light-emitting element 190B, light-emitting element 190G, light-receiving element 190SR, etc., between substrate 151 and substrate 152.

[0290] The substrate 152 and the insulating layer 214 are bonded together via an adhesive layer 142. For sealing the light-emitting element 190B, light-emitting element 190G, and light-receiving element 190SR, a solid sealing structure or a hollow sealing structure can be applied. In Figure 26, the space 143 surrounded by the substrate 152, adhesive layer 142, and insulating layer 214 is filled with an inert gas (nitrogen, argon, etc.), indicating a hollow sealing structure. The adhesive layer 142 may be provided overlapping the light-emitting element 190B, light-emitting element 190G, and light-receiving element 190SR. Alternatively, the space 143 surrounded by the substrate 152, adhesive layer 142, and insulating layer 214 may be filled with a resin different from that of the adhesive layer 142.

[0291] The light-emitting element 190B has a stacked structure in which the pixel electrode 191, common layer 112, light-emitting layer 193B, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214 side. The pixel electrode 191 is connected to the conductive layer 222b of the transistor 207 through an opening provided in the insulating layer 214. The transistor 207 has the function of controlling the driving of the light-emitting element 190B. The end of the pixel electrode 191 is covered by a partition wall 216. The pixel electrode 191 contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0292] The light-emitting element 190G has a stacked structure in which the pixel electrode 191, common layer 112, light-emitting layer 193G, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214 side. The pixel electrode 191 is connected to the conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214. The transistor 206 has the function of controlling the driving of the light-emitting element 190G.

[0293] The light-receiving element 190SR has a stacked structure in which the pixel electrode 191, common layer 112, active layer 183, light-emitting layer 193R, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214 side. The pixel electrode 191 is electrically connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The transistor 205 has the function of controlling the driving of the light-receiving element 190SR.

[0294] Light emitted from the light-emitting element 190B, light-emitting element 190G, and light-receiving element 190SR is emitted towards the substrate 152. Light is also incident on the light-receiving element 190SR through the substrate 152 and the space 143. It is preferable to use a material with high transmittance to visible light for the substrate 152.

[0295] The pixel electrode 191 can be manufactured using the same material and process. The common layer 112, common layer 114, and common electrode 115 are used in common for the light-emitting element 190B, light-emitting element 190G, and light-receiving element 190SR. The light-receiving element 190SR has a configuration in which an active layer 183 is added to the configuration of a light-emitting element that emits red light. Furthermore, the light-emitting elements 190B, 190G, and 190SR can all have the same configuration except for the difference in the configuration of the active layer 183 and the light-emitting layers 193 of each color. This makes it possible to add a light-receiving function to the pixel section 162 of the display device 100A without significantly increasing the manufacturing process.

[0296] A light-shielding layer BM is provided on the substrate 151 side of substrate 152. The light-shielding layer BM has openings in positions that overlap with the light-emitting element 190B, light-emitting element 190G, and light-receiving element 190SR, respectively. By providing the light-shielding layer BM, the range in which the light-receiving element 190SR detects light can be controlled. In addition, the presence of the light-shielding layer BM suppresses direct incidence of light from the light-emitting element 190G or light-emitting element 190B to the light-receiving element 190SR without passing through an object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0297] Transistors 201, 205, 206, and 207 are all formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0298] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0299] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0300] Insulating layer 211, insulating layer 213, and insulating layer 215 are preferably made of an inorganic insulating film. Examples of inorganic insulating films that can be used include silicon nitride film, silicon oxynitride film, silicon oxide film, silicon nitride film, aluminum oxide film, and aluminum nitride film. Alternatively, hafnium oxide film, hafnium oxynitride film, hafnium oxide nitride film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, cerium oxide film, and neodymium oxide film may also be used. Furthermore, two or more of the above-mentioned insulating films may be laminated together. A base film may be provided between the substrate 151 and the transistor. The above-mentioned inorganic insulating film can also be used for this base film.

[0301] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100A. This prevents impurities from entering through the organic insulating film from the edge of the display device 100A. Alternatively, the organic insulating film may be formed so that its edge is inward from the edge of the display device 100A, so that the organic insulating film is not exposed at the edge of the display device 100A.

[0302] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0303] In the region 228 shown in Figure 26, an opening is formed in the insulating layer 214. This prevents impurities from entering the pixel portion 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. Therefore, the reliability of the display device 100A can be improved.

[0304] Transistors 201, 205, 206, and 207 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0305] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0306] Transistors 201, 205, 206, and 207 are configured in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by supplying a potential to control the threshold voltage to one of the two gates and a potential to drive the other.

[0307] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, crystalline semiconductors (microcrystalline semiconductors, polycrystalline semiconductors, single-crystal semiconductors, or semiconductors with crystalline regions in part) may be used. Using a crystalline semiconductor is preferable because it can suppress the degradation of transistor characteristics.

[0308] The semiconductor layer of the transistor preferably contains a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may contain silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0309] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0310] In particular, it is preferable to use an oxide (also written as IGZO) containing indium (In), gallium (Ga), and zinc (Zn) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, gallium, zinc, and tin. Alternatively, it is preferable to use an oxide having indium and zinc.

[0311] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include compositions where In:M:Zn=1:1:1 or close to it, In:M:Zn=1:1:1.2 or close to it, In:M:Zn=2:1:3 or close to it, In:M:Zn=3:1:2 or close to it, In:M:Zn=4:2:3 or close to it, In:M:Zn=4:2:4.1 or close to it, In:M:Zn=5:1:3 or close to it, In:M:Zn=5:1:6 or close to it, In:M:Zn=5:1:7 or close to it, In:M:Zn=5:1:8 or close to it, In:M:Zn=10:1:3 or close to it, In:M:Zn=6:1:6 or close to it, In:M:Zn=5:2:5 or close to it, and so on. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0312] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when the atomic ratio of In is 4, the atomic ratio of Ga is between 1 and 3, and the atomic ratio of Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when the atomic ratio of In is 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when the atomic ratio of In is 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0313] The semiconductor layers in which the channels of transistors 201, 205, 206, and 207 are formed may each be made of different semiconductor materials. For example, crystalline silicon (such as low-temperature polysilicon or single-crystal silicon) can be used for the semiconductor layer of transistor 201, and metal oxides can be used for the semiconductor layers of transistors 205, 206, and 207.

[0314] Transistors containing metal oxides (hereinafter also called OS transistors) have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (hereinafter also called off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Using OS transistors enables the creation of low-power display devices. Transistors containing low-temperature polysilicon (LTPS) (hereinafter also called LTPS transistors) have high field-effect mobility and good frequency characteristics. Using LTPS transistors enables the creation of high-speed display devices. Display device 100A utilizes transistors with different semiconductor layer materials, thereby leveraging the advantages of each transistor to create a high-performance display device.

[0315] The transistors in circuit 164 and the transistors in pixel unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in pixel unit 162 may all be the same or there may be two or more different structures.

[0316] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The upper surface of the connection portion 204 exposes the conductive layer 166, which is obtained by processing the same conductive film as the pixel electrode 191. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0317] Various optical components can be placed on the outside of the substrate 152. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. In addition, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may be placed on the outside of the substrate 152.

[0318] Substrates 151 and 152 can be made of glass, quartz, ceramic, sapphire, resin, etc., respectively. Using flexible materials for substrates 151 and 152 can increase the flexibility of the display device.

[0319] The adhesive layer can be made from various types of curing adhesives, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0320] The connecting layer can be made of anisotropic conductive film (ACF), anisotropic conductive paste (ACP), or the like.

[0321] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0322] As a translucent conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing such metallic materials, can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials, alloy materials (or their nitrides), it is preferable to make them thin enough to be translucent. Furthermore, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used as conductive layers for various wirings and electrodes constituting display devices, as well as conductive layers in light-emitting and light-receiving devices (conductive layers that function as pixel electrodes, common electrodes, etc.).

[0323] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, silicon oxide, and aluminum oxide.

[0324] <Display device 100B> Figure 27 shows a cross-sectional view of the display device 100B.

[0325] Display device 100B differs from display device 100A mainly in that it has a protective layer 195. A detailed explanation of the configuration, which is the same as that of display device 100A, will be omitted.

[0326] By providing a protective layer 195 that covers the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element 190SR, it is possible to suppress the ingress of impurities such as water into the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element 190SR, thereby improving the reliability of the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element 190SR.

[0327] In the region 228 near the edge of the display device 100B, it is preferable that the insulating layer 215 and the protective layer 195 are in contact with each other through an opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are in contact with each other. This makes it possible to suppress the entry of impurities into the pixel portion 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100B can be improved.

[0328] The protective layer 195 may be a single layer or a multilayer structure. For example, the protective layer 195 may be a three-layer structure having an inorganic insulating layer on the common electrode 115, an organic insulating layer on the inorganic insulating layer, and an inorganic insulating layer on the organic insulating layer. In this case, it is preferable that the end of the inorganic insulating film extends outward more than the end of the organic insulating film.

[0329] Furthermore, a lens may be provided in the area overlapping with the light-receiving element 190SR. This can improve the sensitivity and accuracy of the sensor using the light-receiving element 190SR.

[0330] The lens preferably has a refractive index of 1.3 to 2.5. The lens can be formed using at least one of an inorganic material and an organic material. For example, a material containing resin can be used for the lens. In addition, a material containing at least one of an oxide and a sulfide can be used for the lens.

[0331] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, and resins containing sulfur can be used in lenses. Alternatively, materials containing a resin and nanoparticles of a material with a higher refractive index than the resin can be used in lenses. Titanium oxide or zirconium oxide can be used as nanoparticles.

[0332] Cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium, and zinc can be used in lenses. Alternatively, zinc sulfide can be used in lenses.

[0333] In the display device 100B, the protective layer 195 and the substrate 152 are bonded together by an adhesive layer 142. The adhesive layer 142 is provided in overlapping layers with the light-emitting element 190B, the light-emitting element 190G, and the light-receiving element 190SR, respectively, and a solid encapsulation structure is applied to the display device 100B.

[0334] <Display device 100C> Figure 28A shows a cross-sectional view of the display device 100C.

[0335] The transistor structure of display device 100C differs from that of display device 100B.

[0336] The display device 100C has transistors 208, 209, and 210 on the substrate 153.

[0337] Transistors 208, 209, and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i.

[0338] Conductive layer 222a and conductive layer 222b are connected to the low-resistance region 231n via openings provided in insulating layer 225 and insulating layer 215, respectively. Of the conductive layer 222a and conductive layer 222b, one functions as a source and the other as a drain.

[0339] The pixel electrode 191 of the light-emitting element 190G is electrically connected to one of the pair of low-resistance regions 231n of the transistor 208 via the conductive layer 222b.

[0340] The pixel electrode 191 of the light-emitting element 190SR is electrically connected to the other of a pair of low-resistance regions 231n of the transistor 209 via the conductive layer 222b.

[0341] Figure 28A shows an example where the insulating layer 225 covers the top and sides of the semiconductor layer. On the other hand, in the transistor 202 shown in Figure 28B, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 28B can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 28B, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215. Furthermore, an insulating layer 218 covering the transistor may also be provided.

[0342] Display device 100C differs from display device 100B in that it does not have substrates 151 and 152, but has substrates 153, 154, adhesive layer 155, and insulating layer 212.

[0343] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the protective layer 195 are bonded together by an adhesive layer 142.

[0344] The display device 100C is manufactured by transferring an insulating layer 212, transistors 208, 209, 210, light-emitting element 190SR, and light-emitting element 190G, etc., formed on a fabricated substrate, onto a substrate 153. It is preferable that both substrates 153 and 154 are flexible. This enhances the flexibility of the display device 100C.

[0345] The insulating layer 212 can be an inorganic insulating film that can be used for insulating layers 211, 213, and 215.

[0346] <Display device 100D> Figure 29A shows a cross-sectional view of the display device 100D.

[0347] The structure of the transistor 210 in the display device 100D differs from that of the display device 100C.

[0348] The display device 100D has transistors 208, 209, and 210A. An enlarged view of transistor 210A is shown in Figure 29B.

[0349] The semiconductor layer of transistor 210A is formed on a different plane from the semiconductor layers of transistors 208 and 209. For example, an LTPS transistor can be used for transistor 210A, and OS transistors can be used for transistors 208 and 209.

[0350] The transistor 210A has a conductive layer 251 that functions as a bottom gate, an insulating layer 217 that functions as a first gate insulating layer, a semiconductor layer having a channel forming region 252i and a pair of low-resistance regions 252n, a conductive layer 254a connected to one of the pair of low-resistance regions 252n, a conductive layer 254b connected to the other of the pair of low-resistance regions 252n, an insulating layer 219 that functions as a second gate insulating layer, a conductive layer 253 that functions as a top gate, and an insulating layer 211 covering the conductive layer 253.

[0351] The insulating layer 217 and the insulating layer 219 can be made of an inorganic insulating film that can be used for the insulating layer 211 and the insulating layer 225, respectively.

[0352] Conductive layer 254a and conductive layer 254b are electrically connected to the low-resistance region 252n via openings provided in insulating layer 219 and insulating layer 211, respectively. One of the conductive layer 254a and conductive layer 254b functions as a source, and the other functions as a drain.

[0353] An insulating layer 225 and an insulating layer 215, which function as protective layers, are provided on the transistor 210A. Conductive layers 255a and 255b are electrically connected to conductive layer 254a or conductive layer 254b, respectively, through openings provided in insulating layers 225 and 215.

[0354] Although Figure 29A shows a configuration in which conductive layer 255a is electrically connected to one of the pair of low-resistance regions 252n via conductive layer 254a, and conductive layer 255b is electrically connected to the other of the pair of low-resistance regions 252n via conductive layer 254b, the present invention is not limited to this. Conductive layers 254a and 254b may not be provided, and conductive layer 255a may be in contact with one of the pair of low-resistance regions 252n, and conductive layer 255b may be in contact with the other of the pair of low-resistance regions 252n.

[0355] Figure 29A shows a configuration in which the conductive layer 253 is provided on the same surface as the bottom gates of transistors 208 and 209. The conductive layer 253 can be made of the same material as the bottom gates of transistors 208 and 209. Furthermore, it is preferable that the conductive layer 253 be formed by processing the same conductive film as the bottom gates of transistors 208 and 209. By processing the same conductive film, the manufacturing process can be simplified.

[0356] Figure 29A shows a configuration in which conductive layers 255a and 255b are provided on the same plane as the source and drain of transistor 208 and the source and drain of transistor 209. Conductive layers 255a and 255b can be made from the same material as the source and drain of transistor 208 and the source and drain of transistor 209. Furthermore, it is preferable that conductive layers 255a and 255b are formed by processing the same conductive film as the source and drain of transistor 208 and the source and drain of transistor 209. By processing the same conductive film, the manufacturing process can be simplified.

[0357] As described above, in this embodiment, the display device is provided with a light-receiving element instead of a light-emitting element in each sub-pixel exhibiting any of the colors. Since the light-receiving element serves as both a light-emitting element and a light-receiving element, a light-receiving function can be added to the pixel without increasing the number of sub-pixels included in the pixel. Furthermore, a light-receiving function can be added to the pixel without reducing the resolution of the display device or the aperture ratio of each sub-pixel.

[0358] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0359] (Embodiment 3) This embodiment describes metal oxides (also called oxide semiconductors) that can be used in the OS transistor described in the above embodiment.

[0360] The metal oxide preferably contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0361] Metal oxides can be formed by methods such as sputtering, chemical vapor deposition (CVD) including metal-organic chemical vapor deposition (MOCVD), and atomic layer deposition (ALD).

[0362] <Classification of crystal structures> Examples of crystalline structures for oxide semiconductors include amorphous (including completely amorphous), CAAC (c-axis-aligned crystalline), nc (nanocrystalline), CAC (cloud-aligned composite), single crystal, and polycrystal.

[0363] The crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectroscopy. For example, it can be evaluated using the XRD spectrum obtained by GIXD (Grazing-Incidence XRD) measurement. The GIXD method is also known as the thin-film method or the Seemann-Bohlin method.

[0364] For example, in a quartz glass substrate, the peak shape of the XRD spectrum is nearly symmetrical. On the other hand, in an IGZO film with a crystalline structure, the peak shape of the XRD spectrum is asymmetrical. The asymmetrical shape of the XRD spectrum peak clearly indicates the presence of crystals in the film or substrate. In other words, if the peak shape of the XRD spectrum is not symmetrical, the film or substrate cannot be said to be in an amorphous state.

[0365] The crystalline structure of a film or substrate can be evaluated by the diffraction pattern (also called the nano-beam electron diffraction pattern) observed using nano-beam electron diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. However, in the diffraction pattern of an IGZO film deposited at room temperature, a spot-like pattern is observed instead of a halo. Therefore, it is presumed that an IGZO film deposited at room temperature is in an intermediate state, neither crystalline nor amorphous, and cannot be concluded to be in an amorphous state.

[0366] <Oxide semiconductor structure> It should be noted that oxide semiconductors may be classified differently from those described above when considering their structure. For example, oxide semiconductors can be divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo-amorphous oxide semiconductors (a-like OS), and amorphous oxide semiconductors.

[0367] Here, we will explain the details of the CAAC-OS, nc-OS, and a-like OS mentioned above.

[0368] [CAAC-OS] CAAC-OS is an oxide semiconductor having multiple crystalline regions, the c-axis of which is oriented in a specific direction. This specific direction is the thickness direction of the CAAC-OS film, the normal direction to the surface on which the CAAC-OS film is formed, or the normal direction to the surface of the CAAC-OS film. A crystalline region is a region with periodic atomic arrangement. If we consider the atomic arrangement as a lattice arrangement, then a crystalline region is also a region with a aligned lattice arrangement. Furthermore, CAAC-OS has regions where multiple crystalline regions are connected in the ab-plane direction, and these regions may exhibit distortion. Distortion refers to a point in the connected region where the orientation of the lattice arrangement changes between a region with a aligned lattice arrangement and another region with a aligned lattice arrangement. In short, CAAC-OS is an oxide semiconductor that is c-axis oriented and does not exhibit clear orientation in the ab-plane direction.

[0369] Each of the multiple crystalline regions described above is composed of one or more minute crystals (crystals with a maximum diameter of less than 10 nm). When a crystalline region is composed of a single minute crystal, the maximum diameter of that crystalline region is less than 10 nm. When a crystalline region is composed of many minute crystals, the size of that crystalline region may be around several tens of nanometers.

[0370] In In-M-Zn oxide (where element M is one or more elements selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystalline structure (also called a layered structure) consisting of layers containing indium (In) and oxygen (hereinafter referred to as the In layer) and layers containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M,Zn) layer). Indium and element M are mutually substitutable. Therefore, the (M,Zn) layer may contain indium. The In layer may also contain element M. The In layer may also contain Zn. This layered structure can be observed, for example, as a lattice image in high-resolution TEM (Transmission Electron Microscope) images.

[0371] When structural analysis of a CAAC-OS film is performed using an XRD instrument, for example, out-of-plane XRD measurements using θ / 2θ scanning show a peak indicating c-axis orientation at 2θ = 31° or nearby. Note that the position of the c-axis orientation peak (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0372] For example, multiple bright spots are observed in the electron diffraction pattern of a CAAC-OS film. These spots are observed at point-symmetric positions with respect to the incident electron beam spot (also called the direct spot) that passed through the sample.

[0373] When the crystal region is observed from the specific direction described above, the lattice arrangement within that crystal region is based on a hexagonal lattice, but the unit cell is not necessarily a regular hexagon and may be non-regular hexagonal. Furthermore, the strain may have lattice arrangements such as pentagons or heptagons. Moreover, in CAAC-OS, clear grain boundaries cannot be observed even near the strain. In other words, it can be seen that the formation of grain boundaries is suppressed by the strain in the lattice arrangement. This is thought to be because CAAC-OS can tolerate strain due to the sparse arrangement of oxygen atoms in the ab-plane direction, or because the bond distance between atoms changes due to the substitution of metal atoms.

[0374] A crystal structure in which clear grain boundaries are observed is called a polycrystal. Grain boundaries act as recombination centers, trapping carriers and potentially causing a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which clear grain boundaries are not observed, is one of the crystalline oxides with a suitable crystal structure for the semiconductor layer of a transistor. In addition, a structure containing Zn is preferred for the composition of CAAC-OS. For example, In-Zn oxide and In-Ga-Zn oxide are preferred because they suppress the generation of grain boundaries more than In oxide.

[0375] CAAC-OS is an oxide semiconductor with high crystallinity and no clearly defined grain boundaries. Therefore, CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. Furthermore, since the crystallinity of oxide semiconductors can decrease due to the inclusion of impurities or the generation of defects, CAAC-OS can be said to be an oxide semiconductor with few impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS have stable physical properties. Therefore, oxide semiconductors containing CAAC-OS are heat-resistant and highly reliable. In addition, CAAC-OS is stable even at high temperatures (so-called thermal budget) during the manufacturing process. Therefore, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0376] [nc-OS] nc-OS exhibits periodicity in atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS contains minute crystals. These minute crystals are also called nanocrystals because their size is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm. Furthermore, nc-OS shows no regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed throughout the film. Consequently, depending on the analytical method, nc-OS may be indistinguishable from a-like OS and amorphous oxide semiconductors. For example, when structural analysis of an nc-OS film is performed using an XRD instrument, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scanning. Also, when electron diffraction (also called limited-field electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of the nanocrystals (e.g., 50 nm or larger), a diffraction pattern resembling a halo pattern is observed. On the other hand, when electron diffraction (also called nanobeam electron diffraction) is performed on an nc-OS film using an electron beam with a probe diameter close to or smaller than the size of the nanocrystal (for example, 1 nm to 30 nm), an electron diffraction pattern may be obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0377] [a-like OS] a-like OS is an oxide semiconductor having a structure between nc-OS and amorphous oxide semiconductors. a-like OS has porous or low-density regions. That is, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Also, a-like OS has a higher hydrogen concentration in the film compared to nc-OS and CAAC-OS.

[0378] <Oxide semiconductor structure> Next, we will explain the details of CAC-OS mentioned above. Note that CAC-OS refers to the material composition.

[0379] [CAC-OS] CAC-OS is a material composition in which, for example, the elements constituting the metal oxide are unevenly distributed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size. In the following, a state in which one or more metal elements are unevenly distributed in a metal oxide, and the regions containing these metal elements are mixed in sizes of 0.5 nm to 10 nm, preferably 1 nm to 3 nm, or close to that size, is also referred to as a mosaic or patchy state.

[0380] Furthermore, CAC-OS is a composite metal oxide having a mosaic-like structure formed by the separation of the material into a first region and a second region, with the first region distributed within the film (hereinafter also referred to as a cloud-like structure). In other words, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.

[0381] Here, the atomic ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is the region where [In] is greater than the [In] in the composition of the CAC-OS film. The second region is the region where [Ga] is greater than the [Ga] in the composition of the CAC-OS film. Alternatively, for example, the first region is the region where [In] is greater than the [In] in the second region, and [Ga] is smaller than the [Ga] in the second region. The second region is the region where [Ga] is greater than the [Ga] in the first region, and [In] is smaller than the [In] in the first region.

[0382] Specifically, the first region described above is a region whose main components are indium oxide, indium zinc oxide, etc. The second region described above is a region whose main components are gallium oxide, gallium zinc oxide, etc. In other words, the first region can be rephrased as a region whose main component is In. Similarly, the second region can be rephrased as a region whose main component is Ga.

[0383] Furthermore, a clear boundary may not be observed between the first region and the second region described above.

[0384] In in-Ga-Zn oxides, CAC-OS refers to a material composition containing In, Ga, Zn, and O, in which regions with Ga as the main component and regions with In as the main component are arranged in a mosaic-like fashion, with these regions existing randomly. Therefore, it is presumed that CAC-OS has a structure in which the metal elements are unevenly distributed.

[0385] CAC-OS can be formed by sputtering, for example, under conditions where the substrate is not intentionally heated. When forming CAC-OS by sputtering, one or more gases selected from inert gases (typically argon), oxygen gas, and nitrogen gas may be used as the deposition gas. Furthermore, a lower ratio of the oxygen gas flow rate to the total deposition gas flow rate during deposition is preferable. For example, it is preferable that the oxygen gas flow rate ratio to the total deposition gas flow rate during deposition be 0% or more and less than 30%, preferably 0% or more and 10% or less.

[0386] For example, in the case of CAC-OS in In-Ga-Zn oxide, EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX) confirms that it has a structure in which regions mainly composed of In (first region) and regions mainly composed of Ga (second region) are unevenly distributed and mixed.

[0387] Here, the first region is a region with higher conductivity compared to the second region. In other words, the conductivity of the metal oxide is exhibited when carriers flow through the first region. Therefore, a high field-effect mobility (μ) can be achieved when the first region is distributed in a cloud-like manner within the metal oxide.

[0388] On the other hand, the second region is a region with higher insulating properties compared to the first region. In other words, the distribution of the second region within the metal oxide can suppress leakage current.

[0389] Therefore, when CAC-OS is used in a transistor, the conductivity due to the first region and the insulation due to the second region work complementaryly to give CAC-OS a switching function (on / off function). In other words, CAC-OS has conductive function in part of the material, insulating function in part of the material, and semiconductor function as a whole. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on ), high field-effect mobility (μ), and good switching operation can be achieved.

[0390] Transistors using CAC-OS are highly reliable. Therefore, CAC-OS is ideal for various semiconductor devices, including display devices.

[0391] Oxide semiconductors can take on diverse structures, each possessing different properties. One embodiment of the present invention may include two or more of the following: amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0392] <Transistors containing oxide semiconductors> Next, we will explain the case where the above oxide semiconductor is used in a transistor.

[0393] By using the above-mentioned oxide semiconductor in transistors, it is possible to realize transistors with high field-effect mobility. Furthermore, it is possible to realize highly reliable transistors.

[0394] It is preferable to use an oxide semiconductor with a low carrier concentration for the transistor. For example, the carrier concentration of an oxide semiconductor is 1 × 10⁻⁶. 17 cm -3 The following is preferably 1 × 10 15 cm -3 More preferably 1 × 10 13 cm -3More preferably 1 × 10 11 cm -3 More preferably 1 × 10 10 cm -3 It is less than 1 × 10 -9 cm -3 This concludes the explanation. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, the impurity concentration in the oxide semiconductor film should be lowered to reduce the defect level density. In this specification, a low impurity concentration and low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Note that oxide semiconductors with low carrier concentrations are sometimes referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors.

[0395] High-purity intrinsic or substantially high-purity intrinsic oxide semiconductor films have a low defect level density, which may result in a low trap level density.

[0396] Charges trapped in the trap levels of oxide semiconductors can take a long time to disappear and sometimes behave like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with a high density of trap levels may exhibit unstable electrical properties.

[0397] Therefore, reducing the impurity concentration in the oxide semiconductor is effective in stabilizing the electrical characteristics of the transistor. Furthermore, in order to reduce the impurity concentration in the oxide semiconductor, it is preferable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0398] <Impurities> Here, we will explain the effects of various impurities in oxide semiconductors.

[0399] In oxide semiconductors, the presence of silicon, one of the Group 14 elements, or carbon, leads to the formation of defect levels within the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by secondary ion mass spectrometry (SIMS)) are compared by 2 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 17 atoms / cm 3 The following applies:

[0400] When alkali metals or alkaline earth metals are present in oxide semiconductors, they can form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals tend to exhibit normally-on characteristics. For this reason, the concentration of alkali metals or alkaline earth metals in the oxide semiconductor obtained by SIMS should be set to 1 × 10⁻⁶. 18 atoms / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0401] In oxide semiconductors, the presence of nitrogen generates electrons, which act as carriers, increasing the carrier concentration and making it easier for the semiconductor to become n-type. As a result, transistors using oxide semiconductors containing nitrogen tend to exhibit normally-on characteristics. Alternatively, the presence of nitrogen in oxide semiconductors can lead to the formation of trap levels. This can result in unstable electrical properties of the transistor. Therefore, the nitrogen concentration in oxide semiconductors obtained by SIMS should be set to 5 × 10⁻¹⁰. 19 atoms / cm 3 Less than 5 × 10 18 atoms / cm 3 More preferably 1 × 10 18 atoms / cm 3 More preferably 5 × 10 17 atoms / cm 3 Do the following:

[0402] Hydrogen contained in oxide semiconductors can react with oxygen bonded to metal atoms to form water, potentially creating oxygen vacancies. When hydrogen fills these vacancies, electrons, which act as carriers, can be generated. Furthermore, some of the hydrogen can combine with oxygen bonded to metal atoms to generate electrons. Therefore, transistors using oxide semiconductors containing hydrogen tend to exhibit normally-on characteristics. For this reason, it is preferable to reduce the hydrogen content in oxide semiconductors as much as possible. Specifically, in oxide semiconductors, the hydrogen concentration obtained by SIMS should be 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x10 18 atoms / cm 3 Less than 1 × 10 18 atoms / cm 3 Make it less than.

[0403] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be provided.

[0404] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part.

[0405] (Embodiment 4) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 30 to 32.

[0406] The electronic device of this embodiment has a display device according to one aspect of the present invention. For example, the display device according to one aspect of the present invention can be applied to the pixel portion of an electronic device. Since the display device according to one aspect of the present invention has a function to detect light, it can perform biometric authentication at the pixel portion, detect touch operations (contact or proximity), and so on. This can enhance the functionality and convenience of the electronic device.

[0407] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0408] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0409] The electronic device of this embodiment can have a variety of functions. For example, it can have a function to display various information (still images, videos, text images, etc.) on the pixel, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), a wireless communication function, a function to read programs or data recorded on a recording medium, and so on.

[0410] The electronic device 6500 shown in Figure 30A is a portable information terminal that can be used as a smartphone.

[0411] The electronic device 6500 includes a housing 6501, a pixel unit 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508, etc. The pixel unit 6502 is equipped with a touch panel function.

[0412] A display device according to one embodiment of the present invention can be applied to the pixel section 6502.

[0413] Figure 30B is a schematic cross-sectional view of the housing 6501, including the end on the microphone 6506 side.

[0414] A light-transmitting protective member 6510 is provided on the display side of the housing 6501, and the display panel 6511, optical member 6512, touch sensor panel 6513, printed circuit board 6517, battery 6518, etc. are arranged in the space enclosed by the housing 6501 and the protective member 6510.

[0415] The protective member 6510 is fixed to the display panel 6511, the optical member 6512, and the touch sensor panel 6513 by an adhesive layer (not shown).

[0416] In the area outside the pixel section 6502, a portion of the display panel 6511 is folded back, and the FPC 6515 is connected to this folded portion. IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to terminals provided on the printed circuit board 6517.

[0417] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0418] By using a display device according to one aspect of the present invention on the display panel 6511, imaging can be performed on the pixel unit 6502. For example, fingerprints can be captured on the display panel 6511, and fingerprint authentication can be performed.

[0419] The pixel unit 6502 can be further equipped with a touch sensor panel 6513 to provide it with touch panel functionality. The touch sensor panel 6513 can utilize various methods, such as capacitive, resistive, surface acoustic wave, infrared, optical, or pressure-sensitive technology. Alternatively, the display panel 6511 may function as a touch sensor, in which case the touch sensor panel 6513 may not be necessary.

[0420] Figure 31A shows an example of a television system. The television system 7100 has a pixel unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown to be supported by a stand 7103.

[0421] A display device according to one aspect of the present invention can be applied to the pixel section 7000.

[0422] The television device 7100 shown in Figure 31A can be operated using the operation switches on the housing 7101 or a separate remote control unit 7111. Alternatively, the pixel unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the pixel unit 7000 with a finger or the like. The remote control unit 7111 may have a pixel unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the pixel unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0423] The television system 7100 is configured to include a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (from sender to receiver) or two-way (between sender and receiver, or between receivers, etc.) information communication.

[0424] Figure 31B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. The pixel unit 7000 is incorporated into the casing 7211.

[0425] A display device according to one aspect of the present invention can be applied to the pixel section 7000.

[0426] Figures 31C and 31D show examples of digital signage.

[0427] The digital signage 7300 shown in Figure 31C includes a housing 7301, a pixel unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0428] Figure 31D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has pixel sections 7000 arranged along the curved surface of the column 7401.

[0429] In Figures 31C and 31D, a display device according to one embodiment of the present invention can be applied to the pixel portion 7000.

[0430] The larger the pixel area (7000 pixels), the more information can be provided at once. Furthermore, a larger pixel area (7000 pixels) makes the image more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0431] Applying a touch panel to the pixel unit 7000 is preferable because it not only allows for the display of images or videos on the pixel unit 7000, but also enables intuitive operation by the user. Furthermore, when used for applications such as providing route information or traffic information, intuitive operation can enhance usability.

[0432] As shown in Figures 31C and 31D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the pixel unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. In addition, the display on the pixel unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0433] The digital signage 7300 or digital signage 7400 can also be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows a large number of users to participate in and enjoy the game simultaneously.

[0434] The electronic equipment shown in Figures 32A to 32F includes a housing 9000, a pixel unit 9001, a speaker 9003, an operation key 9005 (including a power switch or operation switch), a connection terminal 9006, a sensor 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, and the like.

[0435] The electronic devices shown in Figures 32A to 32F have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on the pixel section, touch panel functions, functions to display a calendar, date or time, functions to control processing by various software (programs), wireless communication functions, functions to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple pixel sections. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them on a recording medium (external or built into the camera), and functions to display the captured images on the pixel section, etc.

[0436] Details of the electronic equipment shown in Figures 32A to 32F will be explained below.

[0437] Figure 32A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text or image information on multiple surfaces. Figure 32A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the pixel section 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, and phone calls, email titles, SNS message titles, sender names, date and time, time, battery level, and antenna signal strength. Alternatively, icons 9050 or the like may be displayed in the location where information 9051 is displayed.

[0438] Figure 32B is a perspective view showing the personal digital assistant (PAD) 9102. The PAD has the function of displaying information on three or more sides of the pixel section 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PAD 9102, while the PAD 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PAD 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0439] Figure 32C is a perspective view showing a wristwatch-type personal information terminal 9200. The pixel unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals or be charged via the connection terminal 9006. Charging may be performed by wireless power supply.

[0440] Figures 32D to 32F are perspective views showing a foldable personal information terminal 9201. Figure 32D shows the personal information terminal 9201 in an unfolded state, Figure 32F shows it in a folded state, and Figure 32E shows a perspective view of the state in between, transitioning from one of Figures 32D or 32F to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The pixel section 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the pixel section 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0441] This embodiment can be implemented in appropriate combination with other embodiments described herein, at least in part. [Explanation of Symbols]

[0442] BM: Light-shielding layer, 100A: Display device, 100B: Display device, 100C: Display device, 100D: Display device, 112: Common layer, 114: Common layer, 115: Common electrode, 142: Adhesive layer, 143: Space, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 162: Pixel area, 164: Circuit, 165: Wiring, 166: Conductive layer, 172: FPC, 173: IC, 180: First electrode, 181: Hole injection layer, 182: Hole transport layer, 182B: Hole transport layer, 182G: Hole transport layer, 182R: Hole transport layer, 183: Active layer, 184: Electron transport layer , 185: electron injection layer, 186: layer, 189: second electrode, 190B: light-emitting element, 190G: light-emitting element, 190SR: light-receiving element, 191: pixel electrode, 192: buffer layer, 192B: buffer layer, 192G: buffer layer, 192R: buffer layer, 193: light-emitting layer, 193B: light-emitting layer, 193G: light-emitting layer, 193R: light-emitting layer, 194: buffer layer, 194B: buffer layer, 194G: buffer layer, 194R: buffer layer, 195: protective layer, 201: transistor, 202: transistor, 204: connector, 205: transistor, 206: transistor, 207: Transistor, 208: Transistor, 209: Transistor, 210: Transistor, 210A: Transistor, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214: Insulating layer, 215: Insulating layer, 216: Partition, 217: Insulating layer, 218: Insulating layer, 219: Insulating layer, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 223: Conductive layer, 225: Insulating layer, 228: Region, 231: Semiconductor layer, 231i: Channel formation region, 231n: Low resistance region, 242: Connection layer, 310A: Display device, 310B: Display device, 310C: Display device, 311B: Sub-pixel, 311G: Sub-pixel, 311SR: Sub-pixel, 311W: Sub-pixel, 321B: Light, 321G: Light, 321R: Light, 322: Light, 323: Light, 324: Reflected light, 342: Transistor, 347B: Light-emitting element, 347G: Light-emitting element, 347SR: Light-receiving element, 350A: Display device, 350B: Display device, 351: Substrate, 352: Finger, 353: Layer, 355: Layer, 357: Layer, 359: Substrate, 400: Display device, 400A: Display device, 401: Control unit, 402: Pixel unit, 403: Sensor unit, 404: Memory unit, 405: Display element, 406: Light-receiving element,407: Authentication unit, 408: Touch sensor, 420: Electronic device, 420A: Electronic device, 421: Housing, 422: Pixel unit, 425: First area, 426: Image, 427: Second area, 428: Image, 429: Display, 430: Finger, 441: Layer, 443: Layer, 445: Space, 451: First authentication information, 453: Second authentication information, 6500: Electronic device, 6501: Housing, 6502: Pixel unit, 6503: Power button, 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Pixel unit, 7100: Television device, 7101: Housing Body, 7103: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal Device, 9000: Housing, 9001: Pixel section, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9200: Personal digital assistant, 9201: Personal digital assistant,

Claims

1. A pixel portion having a first region, A sensor unit having a second region, It has an authentication section, The pixel portion comprises a light-emitting element, a light-receiving element, and a light-shielding layer. The light-shielding layer has an opening at a position where the light-emitting element and the light-receiving element overlap. The pixel portion has the function of lighting up the light-emitting element in the first region, The pixel unit has the function of using the light-receiving element to image an object that has touched the first region and to acquire first authentication information. The first authentication information includes color information, The aforementioned sensor unit is an ultrasonic sensor, The sensor unit has the function of capturing an image of an object that has come into contact with the second region and acquiring second authentication information. The authentication unit has a function to perform a first authentication process using the first authentication information and a function to perform a second authentication process using the second authentication information. The pixel portion and the sensor portion are located on the same plane. electronic equipment.

2. A pixel portion having a first region, A sensor unit having a second region, It has an authentication section, The pixel portion comprises a light-emitting element, a light-receiving element, and a light-shielding layer. The light-shielding layer has an opening at a position where the light-emitting element and the light-receiving element overlap. The pixel portion has the function of lighting up the light-emitting element in the first region, The pixel unit has the function of using the light-receiving element to image an object that has touched the first region and to acquire first authentication information. The first authentication information includes color information, The aforementioned sensor unit is an ultrasonic sensor, The sensor unit has the function of capturing an image of an object that has come into contact with the second region and acquiring second authentication information. The authentication unit has a function to perform a first authentication process using the first authentication information and a function to perform a second authentication process using the second authentication information. The sensor unit is fixed to the pixel unit. electronic equipment.

Images