Wafer cleaning apparatus, and automated wafer polishing and cleaning system and method equipped therewith.

Abstract

The present invention provides a wafer cleaning apparatus that prevents leakage of chemical agents, as well as an automated system and method for wafer polishing and cleaning. [Solution] The wafer cleaning apparatus includes a cleaning chamber, a cleaning assembly, a spin drying assembly, a fluid shielding guide cover, and a clean air supply unit 702, the fluid shielding guide cover is switched between a spin coating position and a spin drying position, the clean air supply unit is arranged to transport shielding fluid to the fluid shielding guide cover, the fluid shielding guide cover includes an outer guide ring with an inverted frustum structure and an inner guide ring with a closed bottom surface in a regular frustum structure, a slit fluid acceleration ring 7014 is formed between the outer guide ring and the inner guide ring, and there is a gap at the bottom of the outer guide ring and the inner guide ring to form a slit fluid jet ring 7015, the slit fluid jet ring forms an acceleration jet shielding ring 7016 to shield against chemical leakage.

Description

TECHNICAL FIELD

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, relates to a wafer cleaning apparatus, and an automated system and method for wafer polishing and cleaning comprising the same. BACKGROUND ART

[0002] In the semiconductor wafer manufacturing process, spin coating, cleaning, and spin drying are critical stages that affect yield. In conventional apparatuses, cleaning and spin drying are often processed in separate partitions, which results in high space usage and low process connection efficiency. Especially during high-speed spin drying, chemical waste liquid is prone to splashing and leakage, which not only contaminates the chamber environment but also may cause cross-contamination. Furthermore, volatile gases from chemical agents corrode apparatus components and impede cleanliness control, and existing flow guide structures have difficulty simultaneously satisfying both the openness and sealing requirements of the process. SUMMARY OF INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION

[0003] The present invention aims to solve the above problems of the prior art, and provide a wafer cleaning apparatus that prevents leakage of chemical agents, and an automated system and method for wafer polishing and cleaning comprising the same. MEANS FOR SOLVING THE PROBLEMS

[0004] To achieve the above object, the present invention provides the following solutions. A wafer cleaning apparatus, comprising: a cleaning chamber; a cleaning assembly for spin-coating and cleaning a wafer using a plurality of chemical agents and detergents; a spin drying assembly disposed inside the cleaning chamber and configured to spin-dry the cleaned wafer; The fluid shielding guide cover is installed above the cleaning chamber so as to be able to move up and down, and can be switched between a spin coating position where the fluid shielding guide cover is raised and the inlet of the cleaning chamber is opened so that the cleaning assembly can perform spin coating cleaning on the wafer, and a spin drying position where the fluid shielding guide cover is lowered so as to block the inlet of the cleaning chamber so as to prevent leakage of waste liquid during the spin drying process, The unit includes a clean air supply unit positioned above the fluid shielding guide cover and configured to transport the shielding fluid to the fluid shielding guide cover, Here, the fluid shielding guide cover includes an outer guide ring and an inner guide ring connected to each other, the outer guide ring having an inverted frustum structure and being arranged to guide clean fluid and form a clean fluid shielding ring on its outer circumference, the inner guide ring having a regular frustum structure with a closed bottom, a slit fluid acceleration ring formed between the outer guide ring and the inner guide ring, the bottoms of the outer guide ring and the inner guide ring having a gap that forms a slit fluid jet ring, the slit fluid jet ring being arranged to form an acceleration jet shielding ring to shield against chemical leakage.

[0005] In an exemplary embodiment, the cleaning chamber is formed by surrounding a waste liquid collector and a waste liquid guide cover, of which, The wastewater collector is arranged around the spin-drying assembly and includes N collection areas that are independently arranged from the outside to the inside, where N is an integer of 1 or more, and the different collection areas are arranged to collect different chemical cleaning wastewaters. The waste liquid guide cover is provided with N annular guide channels that communicate one-to-one with the collection area, and the inlets of the N annular guide channels are arranged sequentially from top to bottom. The lifting drive mechanism drives the waste liquid guide cover up and down so that the entrances of the N annular guide channels are each aligned with the wafer clamping area of ​​the spin drying assembly.

[0006] In an exemplary embodiment, the spin-drying assembly includes a claw clamping mechanism for rapidly rotating the wafer by driving a rotary drive mechanism.

[0007] In an exemplary embodiment, the claw clamping mechanism includes a drive assembly, a transmission assembly, and a clamping claw. The clamping claw includes a clamping structure, the clamping structure is provided with a clamping groove, and the clamping groove includes a first side wall and a second side wall arranged opposite to each other. The clamp groove completes the clamping of the wafer simply by contacting the edge of the wafer, and in the clamped state, A first gap is formed between the first side wall and the wafer surface near the first side wall. and / or, a second gap is formed between the second sidewall and the wafer surface near the second sidewall, Here, the wafer edge refers to the edge that can reflect the thickness of the wafer. The drive assembly is power-driven to the transmission assembly, and a plurality of the transmission assemblies are arranged radially around the drive assembly, and the clamping claws are power-driven to one end of the transmission assembly away from the drive assembly, and the plurality of clamping claws surround the wafer to form a wafer clamping region, and the transmission assembly rotates the clamping claws by the driving force of the drive assembly, and is arranged so that the clamping groove moves closer to or further away from the wafer clamping region, and when the clamping groove is close to the wafer clamping region, it is arranged to clamp the wafer, and when the clamping groove is far from the wafer clamping region, it is arranged to release the wafer.

[0008] In an exemplary embodiment, the cleaning assembly includes a spin coating assembly and a spray assembly, the spin coating assembly includes a chemical tube and a detergent tube and a spin coating swing arm for moving the chemical tube and detergent tube closer to and further away from the wafer, and the spray assembly includes an upper spray pipe for spray cleaning the upper surface of the wafer and a lower spray pipe for spray cleaning the lower surface of the wafer.

[0009] The present invention further provides an automated wafer polishing and cleaning system, comprising a frame and an integrated system thereon A loading unit used for scanning, identifying, and storing dry wafer carriers, A positioning unit used for inverting and positioning a single wafer, A processing unit for polishing both sides of a wafer, A first picking unit positioned to transport dry wafers, An ultrasonic cleaning device for achieving ultrasonic cleaning by controlling the ultrasonic energy density curve, The wafer cleaning apparatus used for spin-coating and centrifugal spin-drying wafers, A second pickup unit positioned to transport wet wafers, An unloading unit used for carrier scanning and load output of dry wafers, It includes a control unit that coordinates each unit to perform a complete closed-loop process of wafer drying and feeding → polishing → ultrasonic cleaning → chemical cleaning and spin drying → drying and ejection.

[0010] In an exemplary embodiment, the ultrasonic cleaning apparatus is It contains and guides medium-temperature liquid water, and has an overflow groove positioned to do so, A wafer positioning mechanism is positioned within the overflow groove to vertically fix the wafer to be cleaned and to cooperate with the wafer to form a vertical laminar flow guide structure. A medium-temperature fluid supply system is provided to supply medium-temperature liquid water to the overflow groove and to maintain vertical laminar flow overflow. A quartz glass laser tunnel as an optical channel and window, The system includes a laser scanning module configured to scan the interior of a medium-temperature liquid water through an optical channel and window to form a controllable cavitation bubble flow.

[0011] In an exemplary embodiment, the laser scanning module is The scanning range covers the wafer projection area, and the depth of focus is adjustable by ±50mm using a 3-axis galvanometer laser. An energy adjustment device that dynamically controls the focal energy density distribution curve of a laser, It includes an energy output proportional controller that enables continuous output adjustment from 10% to 100%.

[0012] The present invention further provides an automated method for wafer polishing and cleaning, employing the above-mentioned automated system, Step S1 involves scanning the load code of the dry wafer and binding the information, Step S2 involves positioning the wafer and then transporting it to the processing unit to perform double-sided polishing. Step S3 involves sending the wafer to ultrasonic cleaning after polishing, Step S4 involves sending the wafer to a wafer cleaning device after ultrasonic cleaning, followed by spin coating cleaning and centrifugal spin drying. The process includes step S5 of discharging the dried wafer.

[0013] In an exemplary embodiment, the ultrasonic cleaning in step S3 is specifically: Step S301 generates a medium-temperature liquid water environment by vertical laminar flow within the cleaning fluid channel, Step S302 involves scanning the inside of liquid water with a laser to form a three-dimensional cavitation zone and controlling the generation of cavitation bubble flow. step S303 of dynamically adjusting the laser energy density distribution curve to control the size and density of cavitation bubbles, step S304 of customizing the bubble collapse energy curve based on the cleaning stage to remove contaminants of different particle sizes in stages, and step S305 of discharging contaminants through laminar overflow.

[0014] In an exemplary embodiment, the dynamic adjustment of the laser energy density distribution curve in step S303 described above includes, adjusting the bubble density by controlling the density and offset distribution of the laser scan path, and controlling the size of the bubbles by adjusting the focal energy ratio.

[0015] In an exemplary embodiment, the stepwise removal of contaminants in step S304 described above includes in the initial stage, preparing large bubbles with a large ratio to remove large-particle contaminants, in the middle stage, preparing a medium bubble mixing ratio to remove medium-particle contaminants, and in the later stage, preparing small bubbles with a high ratio to remove residual fine particle contaminants. [Advantageous Effects of the Invention]

[0016] Compared with the prior art, the present invention achieves the following technical effects. 1. By integrating the cleaning assembly and spin-drying assembly and configuring a vertically adjustable fluid shielding guide cover, seamless switching between the spin-coating cleaning process and the spin-drying process is achieved. In the spin-coating position (upward position), the guide cover opens the chamber inlet for wafer processing, and in the spin-drying position (downward position), it closes the inlet to form physical isolation, blocking the splashing and leakage of waste liquid at the source and significantly reducing the risk of cross-contamination. By integrating the cleaning and spin-drying functions into a single device, the installation area of ​​the device is greatly reduced, and the vertical design of the guide cover eliminates the mechanical complexity of conventional shut-off valves, reducing the failure rate and maintenance costs, thus meeting the demand for efficient and compact equipment upgrades in semiconductor manufacturing. 2. The outer guide ring (inverted frustum) and inner guide ring (regular frustum + closed base) of the guide cover operate in conjunction with each other. The outer guide ring guides the airflow of the clean air supply unit to form a clean fluid shielding ring, covering the outer circumference of the chamber. The airflow velocity is increased by the pressurized slit fluid acceleration ring between the inner and outer rings. The slit fluid jet ring generated by the gap at the bottom creates an accelerating jet shielding ring, forming a dynamic air curtain barrier around the top of the wafer, effectively blocking the volatilization and leakage paths of chemical agents during the spin coating process. 3. During spin coating cleaning (when the guide cover is raised): The accelerating jet shielding ring forms a low negative pressure working area for spin coating between the wafer and the guide cover, trapping scattered chemicals / detergents within this area and guiding them to be discharged downwards to prevent corrosion of other parts of the device. During high-speed spin drying (when the guide cover is lowered): The accelerating jet shielding ring enhances the formation of a high-negative pressure working area for spin drying, and the high-speed airflow quickly removes residual chemicals and detergents from the wafer surface, preventing secondary contamination.

[0017] To more clearly illustrate embodiments of the present invention or prior art technical solutions, the necessary drawings for use in the embodiments are briefly presented below. Clearly, the drawings shown below represent only a few embodiments of the present invention. Those skilled in the art can obtain other drawings based on these without any creative work. [Brief explanation of the drawing]

[0018] [Figure 1] This is a schematic diagram of a wafer cleaning apparatus disclosed in a specific embodiment of the present invention. [Figure 2] Figure 1 is a schematic diagram of the fluid shielding guide cover. [Figure 3] Figure 2 is a schematic diagram of the structure from a different angle. [Figure 4] This is a schematic diagram of the structure from a different angle than Figure 1. [Figure 5] Figure 1 is a schematic diagram showing the fluid shielding guide cover in the spin-coating position. [Figure 6] Figure 1 is a schematic diagram showing the fluid shielding guide cover in the spin-drying position. [Figure 7] Figures 5 and 6 are schematic diagrams of the claw clamping mechanism. [Figure 8] Figure 7 is a schematic diagram of the clamping claws. [Figure 9] Figure 8 is a schematic diagram of the clamp structure. [Figure 10] This is a schematic diagram showing the assembly relationship between the clamp structure and the wafer. [Figure 11] Figure 9 is a front view. [Figure 12] Figure 9 is a schematic diagram showing the structure from a different perspective. [Figure 13] Figure 9 is a schematic diagram illustrating the fluid principle of separation and division in a cross-sectional view. [Figure 14] This is a schematic diagram illustrating the principle of fluid acceleration in the clamping region of the clamping claws. [Figure 15] Figure 7 is a schematic diagram of the connection structure of the claw bearing assembly, transmission assembly, and drive assembly. [Figure 16] Figure 7 is a schematic diagram of the connection structure of another set of claw bearing assemblies, transmission assemblies, and drive assemblies. [Figure 17] Figure 7 is a schematic diagram showing the wafer in a clamped state. [Figure 18] This is a side view of Figure 17. [Figure 19] This is a schematic diagram of an automated wafer polishing and cleaning system disclosed in a specific embodiment of the present invention. [Figure 20] Figure 19 is a schematic diagram of the ultrasonic cleaning apparatus. [Figure 21] Figure 20 shows a schematic diagram of the hot fluid supply system, quartz glass laser tunnel, and laser scanning module. [Figure 22] Figure 19 is a schematic diagram of the assembly structure of the wafer cleaning apparatus. [Modes for carrying out the invention]

[0019] The technical solutions in the embodiments of the present invention are described below clearly and completely with reference to the drawings of the embodiments. Those familiar with the art will readily understand the other advantages and effects of the present invention from the disclosure herein. Clearly, the embodiments described are only a selection of the embodiments of the present invention, not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are all within the scope of the present invention.

[0020] The present invention aims to solve the problems of the prior art and provide a wafer cleaning apparatus that prevents leakage of chemical agents, and an automated wafer polishing and cleaning system and method equipped therewith.

[0021] To further clarify and facilitate understanding the above-mentioned objectives, features, and advantages of the present invention, the present invention will be described in more detail below with reference to the drawings and embodiments for carrying out the invention. [Examples]

[0022] Example 1 Referring to Figures 1 to 18, this embodiment provides a wafer cleaning apparatus comprising a cleaning chamber, a cleaning assembly, a spin-drying assembly, a fluid shielding guide cover 701, and a clean air supply unit 702. The cleaning assembly is configured to spin-coat cleaning wafers using a plurality of chemical agents and detergents, and the spin-drying assembly is configured to spin-dry the wafers after cleaning, located within the cleaning chamber. The fluid shielding guide cover 701 is mounted above the cleaning chamber and is movable up and down, and can be switched between a spin-coating position, where the fluid shielding guide cover 701 is raised and the inlet of the cleaning chamber is opened, allowing the cleaning assembly to spin-coat cleaning wafers, and a spin-drying position, where the fluid shielding guide cover 701 is lowered and the inlet of the cleaning chamber is blocked to prevent leakage of waste liquid during the spin-drying process. The clean air supply unit 702 is located above the fluid shielding guide cover 701 and is configured to deliver shielding fluid to the fluid shielding guide cover 701.

[0023] By integrating the cleaning assembly and spin-drying assembly and configuring a vertically movable fluid shielding guide cover 701, seamless switching between the spin-coating cleaning process and the spin-drying process is achieved. In the spin-coating position (raised), the guide cover opens the chamber inlet for wafer processing, and in the spin-drying position (lowered), it closes the inlet to form physical isolation, blocking the splashing and leakage of waste liquid at the source and significantly reducing the risk of cross-contamination. Integrating the cleaning and spin-drying functions into a single device significantly reduces the installation area of ​​the device, and the vertical design of the guide cover eliminates the mechanical complexity of conventional shut-off valves, reducing failure rates and maintenance costs, thus meeting the demand for efficient and compact equipment upgrades in semiconductor manufacturing.

[0024] Here, the fluid shielding guide cover 701 includes an outer guide ring 7011 and an inner guide ring 7012 connected to each other, the outer guide ring 7011 having an inverted frustum structure and being arranged to guide the clean fluid and form a clean fluid shielding ring 7013 on its outer circumference, the inner guide ring 7012 having a regular frustum structure with a closed bottom, a slit fluid acceleration ring 7014 formed between the outer guide ring 7011 and the inner guide ring 7012, a gap at the bottom of the outer guide ring 7011 and the inner guide ring 7012 forming a slit fluid jet ring 7015 and being arranged to form an acceleration jet shielding ring 7016 to shield against chemical leakage.

[0025] The outer guide ring 7011 and inner guide ring 7012 of the fluid shielding guide cover 701 work in conjunction, with the outer guide ring 7011 guiding the airflow from the clean air supply unit 702 to form a clean fluid shielding ring 7013 that covers the outer circumference of the chamber. The slit fluid acceleration ring 7014 between the inner and outer rings pressurizes the airflow velocity. The slit fluid jet ring 7015 generated by the gap at the bottom generates an accelerated jet shielding ring 7016, forming a dynamic air curtain barrier around the top of the wafer to effectively block the volatilization leakage path of chemical agents during the spin coating stage.

[0026] During spin coating cleaning (when the guide cover is raised): The accelerating jet shielding ring 7016 and the clean fluid shielding ring 7013 form a spin coating low negative pressure working area 7017 between the wafer and the fluid shielding guide cover 701. This area traps any scattered chemicals / detergents and guides them downward to prevent corrosion of other parts of the device.

[0027] During high-speed spin drying (when the guide cover is lowered): The accelerating jet shielding ring 7016 enhances the formation of a spin drying high-negative pressure working area 7018 between the wafer and the fluid shielding guide cover 701, and the high-speed airflow rapidly removes residual chemicals / detergents from the wafer surface, preventing secondary contamination.

[0028] The cleaning chamber is formed by surrounding a waste liquid collector 752 and a waste liquid guide cover 755, of which, The wastewater collector 752 is positioned around the spin-drying assembly and includes N collection areas 753 independently arranged from the outside to the inside, where N is an integer greater than or equal to 1, and the different collection areas 753 are arranged to collect different chemical cleaning wastewaters. Each collection area 753 is provided with its own wastewater outlet 754 for connection to a wastewater discharge pipe.

[0029] The waste liquid guide cover 755 is provided with N annular guide channels 756 that communicate one-to-one with the collection area 753, and the inlets of the N annular guide channels 756 are arranged sequentially from top to bottom.

[0030] This embodiment further includes a lifting drive mechanism 757 for driving the waste liquid guide cover 755 up and down, with the inlets of N annular guide channels 756 each aligned with the wafer clamping area of ​​the spin-drying assembly.

[0031] The cleaning assembly includes a spin coating assembly 758 and a spray assembly, the spin coating assembly 758 including a chemical tube and a detergent tube and a spin coating swing arm for moving the chemical tube and detergent tube closer to and further away from the wafer, and the spray assembly including an upper spray pipe 759 for spray cleaning the upper surface of the wafer and a lower spray pipe 760 for spray cleaning the lower surface of the wafer.

[0032] When using it specifically, for example, when spin-coating a wafer using four chemical agents A, B, C, and D and four detergents E, F, G, and H, The fluid shielding guide cover 701 rises to the spin coating position, the spin coating assembly 758 spin coats and cleans the wafer using agent A, and after cleaning is complete, the fluid shielding guide cover 701 lowers to the spin drying position, the lifting drive mechanism 757 drives the waste liquid guide cover 755 upward, aligning the first layer of the annular guide channel 756 from top to bottom with the wafer clamp area of ​​the spin drying assembly, and spin drying begins, the waste liquid of agent A is collected in the corresponding collection area 753 and discharged from the waste liquid outlet 754.

[0033] The fluid shielding guide cover 701 rises again to the spin coating position, the spin coating assembly 758 spin coats and cleans the wafer using detergent E, and after cleaning is complete, the fluid shielding guide cover 701 lowers to the spin drying position, the lifting drive mechanism 757 drives the waste liquid guide cover 755 upward, aligning the second layer of the annular guide channel 756 from top to bottom with the wafer clamp area of ​​the spin drying assembly, and spin drying begins, the waste liquid of agent A is collected in the corresponding collection area 753 and discharged from the waste liquid outlet 754.

[0034] The fluid shielding guide cover 701 rises again to the spin coating position, the spin coating assembly 758 spin coats and cleans the wafer using agent B, and after cleaning is complete, the fluid shielding guide cover 701 lowers to the spin drying position, the lifting drive mechanism 757 drives the waste liquid guide cover 755 upward, aligning the third layer of the annular guide channel 756 from top to bottom with the wafer clamp area of ​​the spin drying assembly, and spin drying begins, the waste liquid of agent A is collected in the corresponding collection area 753 and discharged from the waste liquid outlet 754.

[0035] The fluid shielding guide cover 701 rises again to the spin coating position, the spin coating assembly 758 spin coats and cleans the wafer using detergent F, and after cleaning is complete, the fluid shielding guide cover 701 lowers to the spin drying position, the lifting drive mechanism 757 drives the waste liquid guide cover 755 upward, aligning the fourth layer of the annular guide channel 756 from top to bottom with the wafer clamp area of ​​the spin drying assembly, and spin drying begins, the waste liquid of agent A is collected in the corresponding collection area 753 and discharged from the waste liquid outlet 754. This is how we can deduce it.

[0036] The types and quantities of chemical agents and detergents can be designed according to process requirements.

[0037] After cleaning the upper spray pipe 759 and lower spray pipe 760 with chemicals and detergents, a final rinse is performed by sequentially spraying a two-fluid mixture of high-purity gas and pure water, along with pure water, onto the upper and lower surfaces of the wafer. Subsequently, the upper spray pipe 759 and lower spray pipe 760 are spin-dried, with the rinsing and spin-drying processes being the same as described above. In each spin-drying step, the upper spray pipe 759 and lower spray pipe 760 were assisted in spin-drying by spraying a high-purity inert gas, such as nitrogen, onto the upper and lower surfaces of the wafer.

[0038] The spin-drying assembly includes a claw clamping mechanism 703 for rapidly rotating the wafer by driving a rotary drive mechanism 750.

[0039] The claw clamping mechanism 703 includes a drive assembly 704, a transmission assembly 705, and a clamping claw 706. The drive assembly 704 is transmitted to the transmission assembly 705, and multiple groups of transmission assemblies 705 are arranged radially around the drive assembly 704. The clamping claw 706 is transmitted to one end of the transmission assembly 705 away from the drive assembly 704, and multiple clamping claws 706 surround a circular placement area for the wafer. The transmission assembly 705 rotates the clamping claw 706 by the driving force of the drive assembly 704, causing the clamping groove 708 to move closer to or further away from the circular placement area. When the clamping groove 708 is close to the circular placement area, it is positioned to clamp the wafer; when the clamping groove 708 is far from the circular placement area, it is positioned to release the wafer.

[0040] The clamping claw 706 includes a clamping structure 707, the clamping structure 707 is provided with a clamping groove 708, and the clamping groove 708 includes a first side wall 709 and a second side wall 710 that are arranged opposite each other. When the clamp groove 708 has a groove bottom 713, the first side wall 709 and the second side wall 710 are both connected to the groove bottom 713, and the three together form a complete, integrated structure. The cross-section of the groove bottom 713 can be a straight structure or an arc structure. In this application, an arc structure is preferred, and the notch of the arc structure faces the opening of the clamp groove 708.

[0041] If the clamp groove 708 does not have a groove bottom 713, the first side wall 709 and the second side wall 710 are separated from each other, and their relative positions are fixed by an external connecting mechanism or support mechanism. During use, multiple clamping claws 706 clamp the wafer in the circumferential direction, and, referring to Figure 10, the clamping grooves 708 of the clamping claws 706 complete the wafer clamping simply by contacting the edge of the wafer, and in the clamped state, There is a first gap 711 between the first side wall 709 and the wafer surface near the first side wall 709. And / or, there is a second gap 712 between the second side wall 710 and the wafer surface near the second side wall 710, Here, the wafer edge refers to the edge that can reflect the thickness of the wafer.

[0042] When the clamp groove 708 contacts the edge of the wafer to clamp it, the wafer edge forms line contact or minute surface contact with the first sidewall 709 and second sidewall 710 of the clamp groove 708. Since this contact surface is part of the edge in the thickness direction of the wafer, rather than the upper and lower processing surfaces of the wafer, various adverse effects that may occur if the clamping mechanism directly contacts the processing surface are avoided, such as the retention of chemical droplets in the clamped area during spin drying after the spin coating process. At the same time, when airflow enters the first gap 711 and / or second gap 712 between the first sidewall 709 and / or the second sidewall 710 and the wafer during the high-speed spin drying process of the wafer, an accelerated airflow is formed, rapidly removing the chemical on the wafer and the clamp groove 708, and achieving self-air drying during high-speed spin drying.

[0043] In this embodiment, along the extending direction of the clamp groove 708, the width of the first gap 711 and / or the second gap 712 gradually decreased, and then gradually increased.

[0044] Specifically, referring to Figure 11, the first side wall 709 was composed of a first flow diversion guide region 709a, a first clamp lifting surface 709b, and a first diffusion region 709c, all connected in a streamlined gradient.

[0045] The second side wall 710 is composed of a second flow-dividing guide region 710a, a second clamp lifting surface 710b, and a second diffusion region 710c, all connected in a streamlined gradient.

[0046] Of these, the distance between the first flow division guide region 709a and the second flow division guide region 710a gradually decreases along the extending direction of the clamp groove 708, the distance between the first clamp lifting surface 709b and the second clamp lifting surface 710b becomes the smallest, and the distance between the first diffusion region 709c and the second diffusion region 710c gradually increases along the extending direction of the clamp groove 708.

[0047] Therefore, the clamp region formed by the first sidewall 709 and the second sidewall 710 forms a Bernoulli lift surface, and during the high-speed spin drying process of the wafer, the airflow enters the first gap 711 between the wafer and the first sidewall 709, and the airflow is accelerated as it sequentially passes through the first flow division guide region 709a, the first clamp lift surface 709b, and the first diffusion region 709c, forming the first slit accelerated airflow 719 shown in Figure 14. The first slit accelerated airflow 719 quickly removes the chemicals on the wafer and clamp claws 706, enabling self-air drying of the lower clamp region of the wafer.

[0048] Similarly, the airflow enters the second gap 712 between the wafer and the second sidewall 710, and is accelerated as it sequentially passes through the second flow division guide region 710a, the second clamp lifting surface 710b, and the second diffusion region 710c, forming the second slit accelerated airflow 718 shown in Figure 14. The second slit accelerated airflow 718 quickly removes the chemicals on the wafer and clamp claws 706, enabling self-air drying of the upper clamp region of the wafer.

[0049] The clamp structure 707 has an air inlet and an air outlet connecting the first gap 711 and / or the second gap 712 to the outside, the air inlet and air outlet being openings at both ends of the clamp groove 708, with the windward side being the air inlet. Referring to Figure 12, the windward side of the clamp structure 707 further has a vent 714 connecting the first gap 711 and / or the second gap 712 to the outside, where the inner diameter of the vent 714 gradually decreases along the direction of air intake. The sloping windbreak wall 715 provides wind resistance and pressure near the inlet region of the vent 714 to increase the airflow in the vent 714.

[0050] As shown in Figure 13, during the high-speed spin drying process of the wafer, an additional airflow is accelerated through the vent holes 714, forming vent jets 717, which are injected into the first gap 711 and / or the second gap 712, and are accelerated in conjunction with the first slit accelerating airflow 719 and / or the second slit accelerating airflow 718. Simultaneously, the accelerated airflow formed by the superposition of the two generates a siphon effect in the first flow division guide region 709a and / or the second flow division guide region 710a, and jets A jet siphon accelerated airflow 716 is generated and injected in superimposed on the first gap 711 and / or the second gap 712, thereby achieving a triple airflow superposition of the first slit accelerated airflow 719 and / or the second slit accelerated airflow 718, the vent jet 717, and the jet siphon accelerated airflow 716. This significantly increases the airflow velocity between the wafer and the first sidewall 709 and / or the second sidewall (710), and further enables efficient and rapid self-air drying in high-speed spin drying.

[0051] In this embodiment, the width of the first gap 711 and / or the second gap 712 gradually decreases along the direction away from the center of the wafer.

[0052] When the clamp groove 708 contacts the edge of the wafer to clamp it, the wafer edge forms line contact or minute surface contact with the first side wall 709 and the second side wall 710 of the clamp groove 708, the width of the first gap 711 and / or the second gap 712 gradually decreases, the first side wall 709 and the second side wall 710 form inclined surfaces with respect to the two sides of the wafer, providing oblique support and restriction to the wafer edge. On the one hand, the contact area in the case of surface contact is further reduced, and on the other hand, the stability of the wafer clamp is improved by the oblique support.

[0053] In this embodiment, the clamp claw 706 further includes a base 721, the clamp structure 707 is installed on the base 721, and a support structure 723 is further installed on the base 721, the clamp groove 708 of the clamp structure 707 faces the support structure 723, and the side wall of the clamp groove 708 closer to the base 721 is the first side wall 709.

[0054] The support structure 723 has a support surface 724 for supporting the wafer, and referring to Figure 13, along the support direction of the support surface 724, one end of the first sidewall 709 closer to the wafer center is lower than the support surface 724, and the other end of the first sidewall 709 further from the wafer center is higher than the support surface 724, so that the first sidewall 709 has a smooth transition between the end closer to the wafer center and the end further from the wafer center.

[0055] During use, the wafer is first placed on the support structure 723 of multiple clamping claws 706, and the wafer stabilizes on the support surface 724 by its own gravity. When it is necessary to clamp the wafer, the clamping claws 706 are rotated around the support structure 723, and the clamping grooves 708 are gradually brought closer to the wafer. The wafer first makes contact with the portion of the first sidewall 709 that is lower than the support surface 724, and as the clamping claws 706 continue to rotate and are guided by the smoothly transitioning first sidewall 709, the wafer gradually rises and moves away from the support surface 724, and finally reaches a stable clamped state through the cooperation of the multiple clamping claws 706.

[0056] At this time, a third gap is formed between the lower surface of the wafer and the support surface 724, and a third slit accelerating airflow 720 is formed between the lower surface of the wafer and the support surface 724 during the high-speed spin drying process of the wafer. The first slit accelerating airflow 720 quickly removes the chemicals on the wafer and the support surface 724, enabling self-air drying of the wafer and the support surface 724. When the wafer is returned to the support surface 724 after the spin drying is complete, residual chemicals on the support surface 724 are prevented from re-adhering to the processed surface of the wafer.

[0057] Furthermore, the support structure 723 further has a support lift surface 725 positioned around the support surface 724, and when the wafer is clamped and contact with the support surface 724 is lost, the distance between the support lift surface 725 and the lower surface of the wafer gradually decreases in the direction toward the support surface 724. In this way, the support lift surface 725 and the support surface 724 also form a Bernoulli lift surface, and a Bernoulli slit acceleration region is formed between the support lift surface 725, the support surface 724 and the lower surface of the wafer, so that the airflow velocity between the wafer and the support surface 724 is greatly improved, and self-air drying during high-speed spin drying can be realized efficiently and quickly.

[0058] In this embodiment, a guide surface 722 for guiding fluid is provided on the outer periphery of the base 721, near the support structure 723 and the clamp structure 707. The guide surface 722 is inclined away from the support structure 723 and the clamp structure 707, that is, the edge of the base 721 is chamfered, and this chamfering forms a frustoconical guide surface 722 on the edge of the base 721.

[0059] During high-speed spin drying of wafers, the detached chemical droplets are typically designed to refract and fall onto a waste liquid collection cover. After the chemical droplets detach from the wafer and clamp claws 706 and fall onto the guide surface 722, the guide surface 722 can, on the one hand, guide the droplets to detach away from the wafer, and on the other hand, control the detachment of the chemical droplets away from the centrifugal angle of the clamp claws 706. This prevents the droplets from detaching horizontally, impacting the waste liquid collection cover, bouncing back, and causing secondary contamination of the wafer.

[0060] The clamping jaws 706 are connected to the transmission assembly 705 via the jaw bearing assembly 744, and the jaw bearing assembly 744 is A support 745 is attached to a rotating disk 751 positioned on the output shaft of a rotary drive mechanism 750 to rotate wafers at high speed for spin drying, A rotating shaft 746 is fixedly connected to the clamping claw 706 and rotatably positioned on the support 745, The system includes a rotating arm 747, one end of which is fixedly connected to the rotating shaft 746 and the other end of which is transmitted to a transmission assembly 705, and which rotates the rotating shaft 746 by receiving the driving force from the transmission assembly 705.

[0061] The transmission assembly 705 is, A first connecting member 734 used for power transmission connection with the drive assembly 704, A first oscillating member 735 is fixedly connected to the first connecting member 734 and swings when driven by the first connecting member 734, A pivot shaft 736 is fixedly connected to the first pivot member 735 and rotates when driven by the first pivot member 735, A second rocking member 737 is fixedly connected to the rocking member rotation shaft 736 and rocks when driven by the rocking member rotation shaft 736, A second connecting member 738 is fixedly connected to the second oscillating member 737 and rotates when driven by the second oscillating member 737, The steering block 739 is fixedly connected to a second connecting member 738, swings by the drive of the second connecting member 738, has a first contact surface 740, a rotating arm 747 has a second contact surface 748, the second contact surface 748 contacts the first contact surface 740 to support the steering block 739, a first slide groove 741 is provided, a transmission pin 749 is provided on the rotating arm 747, the transmission pin 749 is drilled in the first slide groove 741, the width of the first slide groove 741 is greater than the diameter of the transmission pin 749, and the steering block 739 provides space for the steering block 739 to swing.

[0062] The drive assembly 704 is A drive disk 726 is configured to reciprocate along the normal direction of the drive disk 726 by the action of a drive mechanism, Multiple pull rods 729 are arranged on the circumference of the drive disk 726, each pull rod 729 corresponds to a group of transmission assemblies 705, a second slide groove 730 is opened, a first connecting member 734 is drilled in the second slide groove 730, the first connecting member 734 is driven by the pull rod 729, and the pull rod 729 reciprocates along the direction normal to the drive disk 726, A guide seat 731 is also mounted on the rotating disc 751 and has guide holes 732 for the pull rod 729 to pass through, The system includes an elastic member 733 positioned between the drive disk 726 and the guide sheet 731, with both ends fixedly connected to the drive disk 726 and the guide sheet 731, respectively.

[0063] The operation process of the claw clamping mechanism 703 is as follows: First, in the overall structure, both the support 745 and the guide sheet 731 were fixed on the turntable 751, and their positions never changed during operation. Wafer release: The drive disk 726 was raised by a drive mechanism such as an electric or pneumatic lifting device. During this process, the elastic member 733 was compressed, and elastic potential energy was stored. The drive disk 726 drives the pull rod 729 upward, the pull rod 729 drives the first connecting member 734 upward, the first connecting member 734 drives one end of the first oscillating member 735 upward, and as one end of the first oscillating member 735 rises, it oscillates around the oscillating member rotation axis 736, which rotates the oscillating member rotation axis 736, the oscillating member rotation axis 736 drives the second oscillating member 737, the second oscillating member 737 drives the second connecting member 738, the second connecting member 738 drives the steering block 739 to oscillate, the steering block 739 performs a combined motion of movement and oscillation in space due to the action of the second connecting member 738, and the steering block 739 moves within the first slide groove 741 by driving a transmission pin 749 which is movably drilled inside it. The transmission pin 749 is mounted on the rotating arm 747 and has only one degree of freedom of rotation, so the transmission pin 749 rotates the rotating arm 747, the rotating arm 747 rotates the clamping claw 706, the clamping groove 708 of the clamping structure 707 gradually moves away from the circular arrangement area, and the clamped wafer is placed on the support surface 724. Of these, the width of the first slide groove 741 is greater than the diameter of the transmission pin 749, so that there is room for the steering block 739 to swing, and the first contact surface 740 of the steering block 739 and the second contact surface 748 of the rotating arm 747 are in close contact, and the second contact surface 748 does not restrict the swing of the first contact surface 740, thereby also ensuring that there is room for the steering block 739 to swing. Wafer clamping: This process is the reverse of wafer release. The wafer is placed on a support structure 723 consisting of a plurality of clamping claws 706 arranged circumferentially, a drive mechanism such as an electric or pneumatic lifting device is reset, the elastic potential energy stored in the elastic member 733 is released, the drive disk 726 moves downward, and finally the steering block 739 is driven to move and swing in the opposite direction, the rotating arm 747 is driven to rotate in the opposite direction, the clamping groove 708 gradually approaches the wafer, and then lifts the wafer from the support surface 724 to finally form a clamp. Of these, the first connecting member 734 and the first oscillating member 735 may be provided integrally, and the second connecting member 738 and the steering block 739 may also be provided integrally.

[0064] In practice, by setting the initial positions of the first oscillating member 735 and the second oscillating member 737, the drive disk 726 can be raised to clamp the wafer, and the drive disk 726 can be lowered to release the wafer, and these settings can be specifically configured according to actual needs.

[0065] Furthermore, to ensure the stability of the wafer clamping, the clamping claws 706 that clamp the wafer are divided into two groups and controlled by different drive sources, thereby preventing situations where clamping claws 706 in the same group fail to accurately clamp the wafer during the same operating process. In actual operation, it always occurred that at least one of the clamping claws 706 in the same group failed to securely fix to the wafer. Therefore, the drive disk 726 was designed to include an inner drive ring 727 and an outer drive ring 728. The inner drive ring 727 and the outer drive ring 728 use different drive sources. The same number of pull rods 729 are evenly distributed in the inner drive ring 727 and the outer drive ring 728, and the pull rods 729 of the inner drive ring 727 and the outer drive ring 728 are arranged alternately. As shown in Figures 15 and 16, in this embodiment, the inner drive ring 727 is provided with a group of pull rods 729, and the longer oscillating member rotation axis 736 on the long axis support 742 drives the clamping claws 706 to rotate and clamp the wafer. The outer drive ring 728 was also provided with a group pull rod 729, which drove the clamping claws 706 to rotate via a short oscillating member rotation shaft 736 on a short axis support 743, thereby clamping the wafer.

[0066] Example 2 This embodiment provides an automated wafer polishing and cleaning system, comprising a frame 1, a loading unit 2, a positioning unit 3, a processing unit 4, a first pickup unit 5, an ultrasonic cleaning apparatus 6, a wafer cleaning apparatus 7 as described in Embodiment 1, a second pickup unit 8, an unloading unit 9, and a control unit. The loading unit 2 is used for scanning, identifying, and storing dry wafer carriers; the positioning unit 3 is used for inverting and positioning single wafers; the processing unit 4 is used for polishing both sides of wafers; the first picking unit 5 is positioned to transport dry wafers; the ultrasonic cleaning apparatus 6 is positioned to achieve ultrasonic cleaning with ultrasonic energy density curve control; the wafer cleaning apparatus 7 is used for spin coating cleaning and centrifugal spin drying of wafers; the second picking unit 8 is positioned to transport wet wafers; the unloading unit 9 is used for carrier scanning and load output of dry wafers; and the control unit is positioned to coordinate each unit to perform a complete closed-loop process of wafer dry supply → polishing → ultrasonic cleaning → chemical cleaning and spin drying → dry discharge. The ultrasonic cleaning apparatus 6 includes an overflow lube 601, a wafer positioning mechanism 602, a medium-temperature fluid supply system 603, a quartz glass laser tunnel 604, and a laser scanning module 605. The overflow lube 601 is positioned to contain and guide medium-temperature liquid water as the main space for wafer cleaning, and the wafer positioning mechanism 602 is installed within the overflow lube 601 to vertically fix the wafer to be cleaned and is positioned to cooperate with the wafer to form a vertical laminar flow guide structure. The medium-temperature fluid supply system 603 is positioned to supply medium-temperature liquid water to the overflow lube 601 and maintain vertical laminar flow overflow, the quartz glass laser tunnel 604 is configured as an optical channel and window, and the laser scanning module 605 is configured to scan the cavitation zone 615 in the medium-temperature liquid water through the optical channel and window to form a controllable cavitation bubble flow.

[0067] Specifically, the laser scanning module 605 is, The scanning range covers the wafer projection area, and the depth of focus is adjustable by ±50mm using a 3-axis galvanometer laser. An energy adjustment device that dynamically controls the focal energy density distribution curve of a laser, It includes an energy output proportional controller that enables continuous output adjustment from 10% to 100%.

[0068] An overflow channel 606 was provided at the top of the overflow lube 601, and the overflow channel 606 was connected to a drain pipe 607. A water collection tank 608 was provided around the outer circumference of the overflow lube 601, and the drain pipe 607 extended into the water collection tank 608. During the cleaning process, contaminants continued to overflow with the vertical laminar flow and were discharged into the water collection tank 608 through the overflow channel 606 and the drain pipe 607.

[0069] A through-hole is provided at the bottom of the overflow lube 601 through which a quartz glass laser tunnel 604 passes, and the laser of the laser scanning module 605 is focused through the quartz glass laser tunnel 604 onto the cavitation zone 615 in the medium-temperature liquid water. An overlapping joint is provided on the outer circumference near the top of the quartz glass laser tunnel 604, and the overflow lube 601 is provided with a support portion 609 to support the overlapping joint and a crimping portion 610 to crimp the overlapping joint. The crimping portion 610 is in contact with both the overlapping joint and the support portion 609 simultaneously, and a first sealing material is provided in the area where the crimping portion 610 contacts the overlapping joint, and a second sealing material is provided in the area where the crimping portion 610 contacts the support portion 609.

[0070] The wafer positioning mechanism 602 includes two wafer support frames 611 positioned opposite each other, each wafer support frame 611 having a plurality of accommodating grooves for vertically positioning the wafer 0, the accommodating grooves being spaced apart. Above the wafer support frames 611 is a wafer limiting block 612, the accommodating grooves used to support the lower part of the wafer 0, and the wafer limiting block 612 is positioned to limit the upper part of the wafer 0 to prevent the wafer 0 from shifting significantly laterally during the cleaning process.

[0071] The medium-temperature liquid water, carrying cavitation bubbles, flowed from the wafer positioning mechanism 602 and below the wafer 0 to the wafer 0, flowed through the gaps between adjacent wafers 0, and the presence of the wafer positioning mechanism 602 and the wafer 0 reduced the flow area of ​​the medium-temperature liquid water, accelerating it to form a laminar flow that passed vertically across the front and back surfaces of the wafer 0.

[0072] Furthermore, flow rate limiting structures 613 are provided on both sides of the wafer support frame 611 to further reduce the flow area of ​​the mixed fluid.

[0073] Below the accommodating grooves on both sides of the wafer positioning mechanism 602, through guide tunnels 614 are provided for the flow of medium-temperature liquid water to clean the edges of the wafer 0.

[0074] The wafer cleaning apparatus 7 is located within a waterproof groove 761 provided in the frame 1. The waterproof groove 761 is equipped with a sealed door to seal the groove 761 during the wafer cleaning process. An exhaust port 762, which communicates with an exhaust device, is provided within the waterproof groove 761 to maintain a constant negative pressure. A differential pressure detection element 763 is provided within the waterproof groove 761 to monitor the slight differential pressure negative state within the waterproof groove 761 in real time, preventing chemical gases from overflowing from the waterproof groove 761 and damaging the external environment. A chemical preparation box 764 is provided on one side of the waterproof groove 761 and is responsible for controlling the piping of chemical agents and detergents supplied to the spin coating assembly 758. The chemical preparation box 764 also needs to be maintained under negative pressure. Outside the waterproof groove 761, a camera unit 765 is provided to monitor the inside of the waterproof groove 761 in real time through a transparent window.

[0075] Example 3 This embodiment provides an automated method for wafer polishing and cleaning, using the automated system of Example 2, and includes the following steps. S1. The load code of the dried wafer was scanned and the information was bound. S2. After positioning the wafer, it was transported to processing unit 4 for double-sided polishing. S3. After polishing, the wafer was sent for ultrasonic cleaning. S3 specifically involves the following steps: S301. A medium-temperature liquid water environment was created within the cleaning fluid channel by vertical laminar flow. Specifically, the temperature range for the medium-temperature clean liquid water was 50°C to 70°C. When the water temperature exceeds 50°C, the thermal motion of water molecules becomes significantly more vigorous, reducing the surface tension and viscous resistance of liquid water. This makes it easier for cavitation bubbles that have subsequently formed to collapse, generating high-intensity shock waves. Setting the upper temperature limit to 70°C effectively prevents polishing residue on the wafer 0 surface from solidifying or sintering due to high temperatures, ensuring that the contaminants remain loosened in preparation for subsequent removal. A static water replenishment system maintained a continuous overflow state, forming a stable vertical laminar flow and providing a hydrodynamic basis for subsequent bubble mixing and collapse. S302. A laser was used to scan the interior of liquid water to form a three-dimensional cavitation zone and control the generation of cavitation bubble flow. Specifically, after preparing the liquid water environment, a 1064 nm pulsed laser beam was injected into the water system and scanned within the wafer projection area through a 3-axis galvanometer system. The laser focus created a transient plasma within the water body, and its expansion process generated a cluster of cavitation bubbles. The focal depth was adjustable within a range of ±50 mm, uniformly covering different water depth regions. S303. The size and density of cavitation bubbles were controlled by dynamically adjusting the laser energy density distribution curve. Specifically, bubble density was adjusted by controlling a distribution shifted from the density of the laser canvas, and bubble size was controlled by adjusting the focal energy ratio. At this point, the system entered a core control phase, where the laser energy density per unit volume was controlled by programming and adjusting the spacing between scancanvases, thereby precisely controlling the bubble generation density. Jump energy waveforms were used synchronously to dynamically adjust the focal energy ratio within a range of 10% to 100%, allowing for continuous adjustment of the diameter of a single bubble within a specific range, such as 5 to 200 μm. This dual-parameter control formed the basis for bubble matrix generation, allowing for pre-setting the mixing ratio of large and small bubbles in specific passes, for example, by alternating high-energy and low-energy scan lines in a 1:3 ratio. Of these, the jump energy waveform refers to the sudden switching of the energy amplitude of adjacent pulses when the laser device is continuously scanning, such as pulse A: 100% energy → pulse B: 30% energy → pulse C: 80% energy. High-energy pulses: High photon density → Plasma expands violently → Large bubbles (diameter 100-200 μm) are generated. Low-energy pulses: Low degree of ionization → slight plasma expansion → small bubbles (5-20 μm in diameter) were generated.

[0076] S304. The bubble collapse energy curve was customized based on the washing stage to remove contaminants of different particle sizes in stages. In the initial stage, large bubbles, which are a large proportion, are mixed to remove large particulate contaminants. In the medium term, a moderate foam mixing ratio is used to remove moderate amounts of particulate contaminants. In the later stages, a high proportion of small bubbles were incorporated to remove residual particulate contaminants.

[0077] To give a specific example, based on the controllable cavitation field described above, the cleaning process performed the removal of the target contaminants in the following three stages: In the initial stage (approximately 2 minutes), a mixture consisting mainly of large bubbles measuring 100-200 μm was prepared. The collapse of these bubbles generated powerful shock waves exceeding 100-200 kHz, which specifically detached larger particles such as polishing residue measuring 10-20 μm. In the intermediate stage (approximately 3 minutes), the mixture transitioned to a system of bubbles measuring 20-100 μm. The microjet effect, formed by the synergistic effect of medium-frequency shock waves released by the collapse of the bubbles, removed attached particles measuring 2-10 μm. In the later stage (approximately 5 minutes), the bubbles switched to a dense cluster of small bubbles measuring 5-20 μm. The high-frequency resonant waves of 500 kHz to 2 MHz released by their collapse removed nanoscale residues.

[0078] The duration of each stage can be dynamically adjusted by ±30% based on feedback from the online particle sensor, and the energy curve is also optimized in real time. For example, the initial stage uses a combination of 80% energy density and a sparse scan of 1.5 mm, while the later stage switches to a 30% energy density and a dense scan mode of 0.2 mm.

[0079] S305. Pollutants were discharged via laminar flow overflow. During the cleaning process, contaminants were continuously discharged by overflowing with the vertical laminar flow, and the overflow double ensured that the fluid renewal rate matched the contamination load. This dynamic contaminant discharge mechanism prevented secondary deposition of detached contaminants while maintaining the cleanliness of the fluid within the cleaning area. S4. After ultrasonic cleaning, the wafers were sent to a wafer cleaning machine for spin coating cleaning and centrifugal spin drying. The cleaning process includes a parameter optimization cycle. Real-time monitoring of the uniformity of chemical agent spin coating in wafer cleaning equipment. The drug supply parameters of the spin coating arm are adjusted according to the monitoring data. The optimized parameters were synchronized across multiple device clusters. S5. The dried wafer was discharged.

[0080] Any adaptive modifications based on actual needs are within the scope of protection of this invention.

[0081] It will be apparent to those skilled in the art that the present invention is not limited to the details of the above embodiments and can be implemented in other specific forms without departing from the spirit or basic features of the invention. Therefore, the embodiments should be considered in all respects to be illustrative and not limiting. The scope of the invention is limited not by the above description but by the appended claims, and all variations within the meaning and scope of equivalents in the claims are incorporated into the invention. Reference numerals in the claims should not be construed as limiting the relevant claims. This invention uses specific examples to illustrate the principles and embodiments of the invention, and the above description of the embodiments is used solely to help understand the methods and core ideas of the invention. At the same time, for those skilled in the art, the specific embodiments and scope of application will vary depending on the concept of the invention. In short, the contents of this specification should not be understood as limiting the invention. [Explanation of Symbols]

[0082] 0, wafer 1 frame 2 Loading Units 3 Positioning Unit 4 Processing Units 5. First pickup unit 6. Ultrasonic cleaning device 601 Overflow Lube 602 Wafer positioning mechanism 603 Medium Temperature Fluid Supply System 604 Quartz glass laser tunnel 605 Laser Scan Module 606 Overflow Channel 607 Drain pipe 608 Water collection tank 609 Support part 610 Crimping section 611 Wafer support frame 612 wafer limit block 613 Flow restriction structure 614 Guide Tunnel 615 Cavitation zone in medium-temperature liquid water 7 Wafer cleaning equipment 701 Fluid shielding guide cover 7011 Outer guide ring 7012 Inner guide ring 7013 Clean Fluid Shielding Ring 7014 Slit Fluid Accelerator Ring 7015 Slit Fluid Jet Ring 7016 Accelerator Jet Shielding Ring 7017 Spin Coating Low Negative Pressure Working Area 7018 Spin drying high negative pressure working area 702 Clean Air Supply Unit 703 Claw clamping mechanism 704 Drive Assembly 705 Transmission Assembly 706 Clamping Claws 707 Clamp structure 708 Clamp groove 709 First side wall 709a First current division guide region 709b First clamp lifting surface 709c First diffusion zone 710 Second side wall 710a Second flow divider guide region 710b Second clamp lifting surface 710c Second diffusion zone 711 First gap 712 Second gap 713 Groove bottom 714 Ventilation holes 715 Windbreak wall 716 Jet Siphon Accelerating Airflow 717 Vent Jet 718 First slit accelerating airflow 719 Second slit accelerating airflow 720 Third slit accelerating airflow 721 Base 722 Guide surface 723 Support structure 724 Support surface 725 Support Lift Surface 726 Drive Disk 727 Inner drive ring 728 Outer drive ring 729 Pull Load 730 Second slide groove 731 Guide Sheet 732 Guide hole 733 Elastic members 734 First connecting member 735 First rocking member 736 Rotating shaft of the oscillating member 737 Second rocking member 738 Second connecting member 739 Steering Block 740 1st contact surface 741 First slide groove 742 Long axis support 743 Short-axis support 744 Claw bearing assembly 745 Support 746 Rotating shaft 747 Rotating Arm 748 Second contact surface 749 Transmission pin 750 Rotary drive mechanism 751 Rotating disc 752 Waste liquid collector 753 Collection Area 754 Waste liquid outlet 755 Waste liquid guide cover 756 Annular Guide Channel 757 Lifting drive mechanism 758 Spin Coating Assembly 759 Upper spray pipe 760 Lower spray pipe 761 Waterproof groove 762 Exhaust port 763 Differential pressure detection element 764 Drug preparation box 765 Shooting Unit 8. Second pickup unit 9 Unload Unit

Claims

1. A wafer cleaning apparatus, Washing chamber and A cleaning assembly for spin-coating wafers using multiple chemical agents and detergents, A spin drying assembly is placed inside the cleaning chamber and is configured to spin-dry the wafer after cleaning. The fluid shielding guide cover (701) is installed above the cleaning chamber so as to be able to move up and down, and can be switched between a spin coating position where the opening of the cleaning chamber is opened when the fluid shielding guide cover (701) is raised, allowing the cleaning assembly to perform spin coating cleaning on the wafer, and a spin drying position where the opening of the cleaning chamber is closed to prevent leakage of waste liquid during the spin drying process when the fluid shielding guide cover (701) is lowered. The system includes a clean air supply unit (702) positioned above the fluid shielding guide cover (701) and configured to transport the shielding fluid to the fluid shielding guide cover (701), Herein, the wafer cleaning apparatus is characterized in that the fluid shielding guide cover (701) includes an outer guide ring (7011) and an inner guide ring (7012) connected to each other, the outer guide ring (7011) has an inverted frustum structure and is arranged to guide clean fluid and form a clean fluid shielding ring (7013) on its outer circumference, the inner guide ring (7012) has a regular frustum structure with a closed bottom, a slit fluid acceleration ring (7014) is formed between the outer guide ring (7011) and the inner guide ring (7012), the bottoms of the outer guide ring (7011) and the inner guide ring (7012) have a gap that forms a slit fluid jet ring (7015), and the slit fluid jet ring (7015) is arranged to form an acceleration jet shielding ring (7016) to shield against leakage of chemical substances.

2. The cleaning chamber is formed by surrounding a waste liquid collector (752) and a waste liquid guide cover (755). The waste liquid collector (752) is arranged around the spin drying assembly and includes N collection areas (753) independently arranged from the outside to the inside, where N is an integer of 1 or more, and the different collection areas (753) are arranged to collect different chemical cleaning waste liquids. The waste liquid guide cover (755) is provided with N annular guide channels (756) that communicate one-to-one with the collection area (753), and the inlets of the N annular guide channels (756) are arranged sequentially from top to bottom. The wafer cleaning apparatus according to claim 1, further comprising a lifting drive mechanism (757) for driving the waste liquid guide cover (755) up and down so that the inlets of the N annular guide channels (756) are each aligned with the wafer clamping area of ​​the spin drying assembly.

3. The wafer cleaning apparatus according to claim 2, characterized in that the spin drying assembly includes a claw clamping mechanism (703) for rapidly rotating the wafer by driving a rotary drive mechanism (750).

4. The aforementioned claw clamping mechanism (703) includes a drive assembly (704), a transmission assembly (705), and a clamping claw (706), The clamping claw (706) includes a clamping structure (707), the clamping structure (707) is provided with a clamping groove (708), and the clamping groove (708) includes a first side wall (709) and a second side wall (710) that are arranged opposite to each other. The clamp groove (708) completes the clamping of the wafer simply by contacting the edge of the wafer, and in the clamped state, A first gap (711) is formed between the first side wall (709) and the wafer surface near the first side wall (709). and / or, a second gap (712) is formed between the second side wall (710) and the wafer surface near the second side wall (710), Here, the wafer edge refers to the edge that can reflect the thickness of the wafer. The wafer cleaning apparatus according to claim 3, wherein the drive assembly (704) is transmitted to the transmission assembly (705), a plurality of groups of the transmission assemblies (705) are arranged radially around the drive assembly (704), the clamp claws (706) are transmitted to one end of the transmission assembly (705) away from the drive assembly (704), a plurality of the clamp claws (706) surround and form a circular arrangement area for the wafer, the transmission assembly (705) rotates the clamp claws (706) by the driving force of the drive assembly (704), and the clamp groove (708) is arranged to move closer to or further away from the circular arrangement area, the clamp groove (708) is arranged to clamp the wafer when it is close to the circular arrangement area, and the clamp groove (708) is arranged to release the wafer when it is far from the circular arrangement area.

5. The wafer cleaning apparatus according to claim 1, wherein the cleaning assembly includes a spin coating assembly (758) and a spray assembly, the spin coating assembly (758) includes a chemical tube and a detergent tube and a spin coating swing arm for moving the chemical tube and the detergent tube closer to and further away from the wafer, and the spray assembly includes an upper spray pipe (759) for spray cleaning the upper surface of the wafer and a lower spray pipe (760) for spray cleaning the lower surface of the wafer.

6. An automated wafer polishing and cleaning system comprising a frame (1) and an integrated system thereon A loading unit (2) used for scanning, identifying, and storing dry wafer carriers, A positioning unit (3) used for inverting and positioning a single wafer, A processing unit (4) for polishing both sides of the wafer, A first picking unit (5) is positioned to transport the dried wafers, An ultrasonic cleaning apparatus (6) for achieving ultrasonic cleaning by controlling the ultrasonic energy density curve, A wafer cleaning apparatus (7) according to any one of claims 1 to 5, used for spin-coating and centrifugal spin-drying wafers, A second pickup unit (8) positioned to transport wet wafers, An unloading unit (9) used for scanning and loading output of a dry wafer carrier, An automated wafer polishing and cleaning system, comprising a control unit that adjusts each unit to perform a complete closed-loop process of wafer drying and feeding → polishing → ultrasonic cleaning → chemical cleaning and spin drying → drying and ejection.

7. The ultrasonic cleaning device (6) is An overflow groove (601) is positioned to contain and guide medium-temperature liquid water, A wafer positioning mechanism (602) is positioned within the overflow groove (601) to vertically fix the wafer to be cleaned and to cooperate with the wafer (0) to form a vertical laminar flow guide structure, A medium-temperature fluid supply system (603) is provided to supply medium-temperature liquid water to the overflow groove (601) and to maintain vertical laminar flow overflow, A quartz glass laser tunnel (604) as an optical channel and window, The automated wafer polishing and cleaning system according to claim 6, comprising a laser scanning module (605) configured to scan the interior of a medium-temperature liquid water through an optical channel and window to form a controllable cavitation bubble flow.

8. The laser scanning module (605) is The scanning range covers the wafer projection area, and the depth of field is adjustable by ±50 mm. It uses a 3-axis galvanometer laser. An energy adjustment device that dynamically controls the focal energy density distribution curve of a laser, The automated wafer polishing and cleaning system according to claim 7, further comprising an energy output proportional controller that enables continuous output adjustment from 10% to 100%.

9. An automated method for wafer polishing and cleaning, employing the automated system described in claim 6, Step S1 involves scanning the load code of a dry wafer and binding the information, Step S2 involves positioning the wafer and then transporting it to the processing unit (4) to perform double-sided polishing. Step S3 involves sending the wafer to ultrasonic cleaning after polishing, Step S4 involves sending the wafer to a wafer cleaning device after ultrasonic cleaning, followed by spin coating cleaning and centrifugal spin drying. An automated method for wafer polishing and cleaning, characterized by comprising step S5 of discharging a dried wafer.

10. The ultrasonic cleaning in step S3 is specifically as follows: Step S301 generates a medium-temperature liquid water environment by vertical laminar flow within the cleaning fluid channel, Step S302 involves scanning the inside of liquid water with a laser to form a three-dimensional cavitation zone and controlling the generation of cavitation bubble flow. Step S303 involves dynamically adjusting the laser energy density distribution curve to control the size and density of cavitation bubbles, Step S304 involves customizing the bubble collapse energy curve based on the washing stage and removing contaminants of different particle sizes in stages. The automated method for wafer polishing and cleaning according to claim 9, comprising step S305 of discharging contaminants by laminar flow overflow.

11. The dynamic adjustment of the laser energy density distribution curve in step S303 is as follows: By controlling the density and shifted distribution of the laser canvas, the bubble density can be adjusted. The automated wafer polishing and cleaning method according to claim 10, characterized by comprising adjusting the focal energy ratio to control the size of bubbles.

12. The step-by-step removal of contaminants in step S304 is In the initial stage, a large proportion of large bubbles is mixed to remove large particulate contaminants, In the medium term, a moderate foam mixing ratio is used to remove moderate amounts of particulate contaminants. The automated wafer polishing and cleaning method according to claim 10, characterized in that in the later stage, a high proportion of small bubbles are mixed to remove residual particulate contaminants.

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