Display devices, display modules, and electronic devices

Abstract

Provided is a high-resolution display device that has a light detection function. The display device comprises a light-receiving device and a light-emitting device. The light-receiving device comprises a first electrode, an active layer over the first electrode, and a second electrode over the active layer. The light-emitting device comprises a third electrode, a light-emitting layer over the third electrode, and a second electrode over the light-emitting layer. In a top view, the active layer and the light-emitting layer have portions overlapping with one another on the outer side of the first electrode and on the outer side of the third electrode.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a display device, a display module, and electronic equipment. Another aspect of the present invention relates to a display device having a light-receiving device and a light-emitting device.

[0002] It should be noted that one aspect of the present invention is not limited to the above-mentioned technical field. Examples of technical fields of one aspect of the present invention include semiconductor devices, display devices, light-emitting devices, energy storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), methods for driving them, or methods for manufacturing them. [Background technology]

[0003] In recent years, display devices have been expected to have applications in a variety of uses. For example, large-scale display devices are used in home television systems (also called televisions or television receivers), digital signage, and PID (Public Information Display). Furthermore, development is progressing on smartphones and tablet devices equipped with touch panels as portable information terminals.

[0004] As a display device, for example, a light-emitting device (also called a light-emitting element) has been developed. Light-emitting devices that utilize electroluminescence (hereinafter referred to as EL) (also called EL devices or EL elements) have features such as being easy to make thin and light, being able to respond quickly to input signals, and being able to be driven using a DC constant voltage power supply, and are being applied to display devices. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. [Prior art documents] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 2014-197522 [Overview of the project] [Problems that the invention aims to solve]

[0006] One aspect of the present invention aims to provide a high-definition display device having a light detection function. One aspect of the present invention aims to provide a highly convenient display device. One aspect of the present invention aims to provide a multi-functional display device. One aspect of the present invention aims to provide a display device with high display quality. One aspect of the present invention aims to provide a display device with high light detection sensitivity. One aspect of the present invention aims to provide a novel display device.

[0007] Furthermore, the description of these problems does not preclude the existence of other problems. One aspect of the present invention does not necessarily have to solve all of these problems. It is possible to extract other problems from the description in the specification, drawings, and claims. [Means for solving the problem]

[0008] One aspect of the present invention is a display device having a light-receiving device and a light-emitting device, wherein the light-receiving device has a first electrode, an active layer on the first electrode, and a second electrode on the active layer, and the light-emitting device has a third electrode, a light-emitting layer on the third electrode, and a second electrode on the light-emitting layer, wherein, in a top view, the active layer and the light-emitting layer have overlapping portions outside the first electrode and outside the third electrode.

[0009] The light-receiving device and the light-emitting device preferably have a common layer. The common layer preferably has a portion located between the first electrode and the second electrode, and a portion located between the first electrode and the third electrode.

[0010] The light-emitting layer preferably has a portion located on the active layer.

[0011] One aspect of the present invention is a display device having a light-receiving device, a first light-emitting device, and a second light-emitting device, wherein the light-receiving device has a first electrode, an active layer on the first electrode, and a second electrode on the active layer; the first light-emitting device has a third electrode, a first light-emitting layer on the third electrode, and a second electrode on the first light-emitting layer; the second light-emitting device has a fourth electrode, a second light-emitting layer on the fourth electrode, and a second electrode on the second light-emitting layer, wherein the first light-emitting layer and the second light-emitting layer have different light-emitting materials, and in cross-sectional view, the active layer has a portion located between the first light-emitting layer and the second light-emitting layer.

[0012] It is preferable that the light-receiving device, the first light-emitting device, and the second light-emitting device have a common layer. It is preferable that the common layer has a portion located between the first electrode and the second electrode, a portion located between the first electrode and the third electrode, and a portion located between the fourth electrode and the third electrode.

[0013] A display device having any of the above configurations is preferably flexible.

[0014] One aspect of the present invention is a display module having a display device with any of the above configurations, to which a connector such as a Flexible Printed Circuit (FPC) or TCP (Tape Carrier Package) is attached, or a display module on which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method, etc.

[0015] One aspect of the present invention is an electronic device having the above-mentioned display module and at least one of a housing, a battery, a camera, a speaker, and a microphone. [Effects of the Invention]

[0016] According to one aspect of the present invention, a high-definition display device having a light detection function can be provided. According to one aspect of the present invention, a highly convenient display device can be provided. According to one aspect of the present invention, a multifunctional display device can be provided. According to one aspect of the present invention, a display device with high display quality can be provided. According to one aspect of the present invention, a display device with high light detection sensitivity can be provided. According to one aspect of the present invention, a novel display device can be provided.

[0017] Note that the description of these effects does not preclude the presence of other effects. One aspect of the present invention does not necessarily need to have all of these effects. Effects other than these can be extracted from the descriptions of the specification, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] FIGS. 1A to 1D are cross-sectional views illustrating an example of a display device. FIG. 1E is a diagram illustrating an example of an image. FIGS. 2A to 2I are diagrams illustrating an example of a pixel of a display device. FIG. 3 is a top view illustrating an example of a display device. FIGS. 4A to 4C are cross-sectional views illustrating an example of a display device. FIGS. 5A to 5C are cross-sectional views illustrating an example of a method for manufacturing a display device. FIGS. 6A and 6B are cross-sectional views illustrating an example of a method for manufacturing a display device. FIGS. 7A and 7B are cross-sectional views illustrating an example of a method for manufacturing a display device. FIG. 8 is a perspective view illustrating an example of a display device. FIG. 9 is a cross-sectional view illustrating an example of a display device. FIG. 10 is a cross-sectional view illustrating an example of a display device. FIG. 11A is a cross-sectional view illustrating an example of a display device. FIG. 11B is a cross-sectional view illustrating an example of a transistor. FIGS. 12A and 12B are circuit diagrams illustrating an example of a pixel circuit. FIGS. 13A and 13B are diagrams illustrating an example of an electronic device. FIGS. 14A to 14D are diagrams illustrating an example of an electronic device. Figures 15A to 15E show examples of electronic devices. Figures 16A to 16G show examples of electronic devices. [Modes for carrying out the invention]

[0019] Embodiments will be described in detail with reference to the drawings. However, it will be readily apparent to those skilled in the art that the present invention is not limited to the following description, and that its form and details can be modified in various ways without departing from the spirit and scope of the present invention. Accordingly, the present invention shall not be construed as being limited to the descriptions of the embodiments shown below.

[0020] In the invention described below, the same reference numerals are used in common across different drawings for identical parts or parts having similar functions, and repeated explanations are omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used, and reference numerals may not be assigned.

[0021] Furthermore, for the sake of ease of understanding, the position, size, and scope of each component shown in the drawings may not represent their actual position, size, and scope. Therefore, the disclosed invention is not necessarily limited to the position, size, and scope disclosed in the drawings.

[0022] It should be noted that the terms "film" and "layer" can be interchanged depending on the context or situation. For example, the term "conductive layer" can be changed to "conductive film." Or, for example, the term "insulating film" can be changed to "insulating layer."

[0023] In this specification, devices fabricated using a metal mask or an FMM (Fine Metal Mask, a high-resolution metal mask) may be referred to as FMM structure devices or MM (Metal Mask) structure devices. In addition, in this specification, devices fabricated without using a metal mask or an FMM may be referred to as MML (Metal Maskless) structure devices.

[0024] (Embodiment 1) In this embodiment, a display device according to one aspect of the present invention will be described with reference to Figures 1A to 11B.

[0025] The display device of this embodiment has a display unit that includes a light-receiving device and a light-emitting device. In the display device of this embodiment, the light-emitting devices are arranged in a matrix in the display unit, and an image can be displayed on the display unit. In addition, the light-receiving devices are arranged in a matrix in the display unit, and the display unit also functions as a light-receiving unit. The light-receiving unit can be used as either an image sensor or a touch sensor, or both. In other words, by detecting light with the light-receiving unit, it is possible to capture an image and to detect the proximity or contact of an object (such as a finger or pen).

[0026] Furthermore, the display device of this embodiment can utilize the light-emitting device as a light source for the sensor. For example, in addition to displaying an image with all of the subpixels of the display device, some subpixels can emit light as a light source, some other pixels can perform light detection, and the remaining subpixels can display an image. Therefore, it is not necessary to provide a separate light-receiving unit and light source from the display device, and the number of components in the electronic device can be reduced. For example, it is not necessary to separately provide a fingerprint authentication device or a capacitive touch panel for scrolling, etc., which are provided in the electronic device. Therefore, by using a display device of one aspect of the present invention, it is possible to provide an electronic device with reduced manufacturing costs.

[0027] In one embodiment of the present invention, when an object reflects (or scatters) light emitted by a light-emitting device of the display unit, a light-receiving device can detect the reflected light (or scattered light), thus enabling image capture or touch detection even in dark places.

[0028] The display device of this embodiment has the function of displaying an image using a light-emitting device. In other words, the light-emitting device functions as a display device (also called a display element).

[0029] As the light-emitting device, it is preferable to use, for example, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode). Examples of light-emitting materials (also called luminescent materials) that the light-emitting device contains include fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence (TADF) materials). In addition, LEDs such as microLEDs (Light Emitting Diodes) can be used as the light-emitting device. Furthermore, inorganic compounds (for example, quantum dot materials) can be used as the light-emitting material of the light-emitting device.

[0030] The display device of this embodiment has the function of detecting light using a light-receiving device.

[0031] When a light-receiving device is used as an image sensor, the display device of this embodiment can capture images using the light-receiving device. For example, the display device of this embodiment can be used as a scanner.

[0032] For example, an image sensor can be used to acquire data such as fingerprints, palm prints, or iris scans. In other words, a biometric authentication sensor can be built into the display device of this embodiment. By having the display device incorporate a biometric authentication sensor, the number of components in the electronic device can be reduced compared to when a separate biometric authentication sensor is provided for the display device, enabling miniaturization and weight reduction of the electronic device.

[0033] Furthermore, using an image sensor, data such as the user's facial expressions, eye movements, or changes in pupil diameter can be acquired. By analyzing this data, information about the user's physical and mental state can be obtained. Based on this information, the output content of either the display or the sound, or both, can be changed to ensure that the user can safely use the device, for example, in VR (Virtual Reality), AR (Augmented Reality), or MR (Mixed Reality) devices.

[0034] Furthermore, when the light-receiving device is used as a touch sensor, the display device of this embodiment can detect the proximity or contact of an object using the light-receiving device.

[0035] For example, a pn-type or pin-type photodiode can be used as the light-receiving device. The light-receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on it and generates an electric charge. The amount of charge generated is determined based on the amount of incident light.

[0036] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thinner, lighter, and larger in area, and because they offer a high degree of freedom in shape and design, they can be applied to various display devices.

[0037] In one aspect of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, an organic photodiode can be incorporated into a display device using an organic EL device.

[0038] If all the layers constituting organic EL devices and organic photodiodes were to be fabricated separately, the number of film deposition processes would become extremely large. Since organic photodiodes have many layers that can share a common structure with organic EL devices, the increase in the number of film deposition processes can be suppressed by depositing these common layers in a single batch. Furthermore, even with the same number of deposition cycles, reducing the number of layers deposited only on some devices reduces the impact of misalignment of the deposition pattern and the impact of dust (including small foreign matter called particles) adhering to the deposition mask (such as a metal mask). This can improve the yield of display device manufacturing.

[0039] For example, it is preferable to make at least one of the hole injection layer, hole transport layer, electron transport layer, and electron injection layer a common layer in both the photodetector and the light-emitting device. This reduces the number of film deposition cycles and masks, thereby reducing the number of manufacturing steps and manufacturing costs of the display device. Note that the functions of layers common to both the photodetector and the light-emitting device may differ between the photodetector and the light-emitting device. In this specification, components are referred to based on their function in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the photodetector. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the photodetector. Furthermore, the functions of layers common to both the photodetector and the light-emitting device may be identical between the light-emitting device and the photodetector. A hole transport layer functions as a hole transport layer in both the light-emitting device and the photodetector, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the photodetector.

[0040] Furthermore, the light-emitting layer of a light-emitting device and the active layer of a light-receiving device can each be formed in an island-like manner using a fine metal mask (also called a metal mask or shadow mask). When manufacturing high-resolution display devices, the edges of the light-emitting layer and the edges of the active layer can overlap. By using a fine metal mask, high-resolution display devices with a resolution of 300 ppi or higher or 500 ppi or higher, and a resolution of 1000 ppi or lower or 800 ppi or lower can be manufactured.

[0041] Furthermore, when light-emitting layers in light-emitting devices that emit light of different colors overlap, side leaks can occur, potentially degrading the display quality. For example, when applying phosphorescent light-emitting devices to both red and green light-emitting devices, the respective light-emitting layers can be formed by dispersing red light-emitting material in the same host material for the red light-emitting device and green light-emitting material for the green light-emitting device. When the configurations of the light-emitting layers are similar in this way, side leaks are likely to occur. Therefore, it is preferable to have a configuration in which the red light-emitting layer and the green light-emitting layer do not directly contact each other, or a configuration in which the area of ​​direct contact between the red and green light-emitting layers is reduced. Thus, it is preferable to have a step of forming an active layer between the step of forming the red light-emitting layer and the step of forming the green light-emitting layer. This creates a portion with an active layer between the red and green light-emitting layers, reducing the area of ​​direct contact between the red and green light-emitting layers. Therefore, side leaks occurring between light-emitting devices that emit light of different colors can be suppressed. This makes it possible to create a display device with high display quality.

[0042] [Example of display device configuration 1] Figures 1A to 1D show cross-sectional views of a display device according to one embodiment of the present invention.

[0043] The display device 50A shown in Figure 1A has a layer 53 having a light-receiving device and a layer 57 having a light-emitting device between a substrate 51 and a substrate 59.

[0044] The display device 50B shown in Figure 1B has a layer 53 having a light-receiving device, a layer 55 having a transistor, and a layer 57 having a light-emitting device between substrate 51 and substrate 59.

[0045] In the display devices 50A and 50B, red (R), green (G), and blue (B) light are emitted from the layer 57 having a light-emitting device.

[0046] A display device according to one aspect of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting device. For example, a pixel can have a configuration with three subpixels (such as three colors R, G, and B, and three colors yellow (Y), cyan (C), and magenta (M)), or a configuration with four subpixels (such as four colors R, G, B, and white (W); four colors R, G, B, and Y; and four types of light R, G, B, and infrared (IR)). Furthermore, each pixel has a light-receiving device. Light-receiving devices may be provided for all pixels or for some pixels. Also, a single pixel may have multiple light-receiving devices.

[0047] The transistor-containing layer 55 preferably has a first transistor and a second transistor. The first transistor is electrically connected to a light-receiving device. The second transistor is electrically connected to a light-emitting device.

[0048] A display device according to one aspect of the present invention may have a function to detect an object, such as a finger, that is in contact with the display device. For example, as shown in Figure 1C, when a finger 52 in contact with the display device 50B reflects light emitted by a light-emitting device in a layer 57 having a light-emitting device, a light-receiving device in a layer 53 having a light-receiving device detects the reflected light. This makes it possible to detect that a finger 52 has come into contact with the display device 50B.

[0049] A display device according to one aspect of the present invention may have a function to detect or image an object that is close to (i.e., not in contact with) the display device 50B, as shown in Figure 1D.

[0050] Figure 1E shows an example of a fingerprint image captured by a display device according to one embodiment of the present invention. In Figure 1E, the contour of the finger 220 is shown by a dashed line and the contour of the contact area 224 is shown by a dashed line within the imaging range 226. Within the contact area 224, a fingerprint 222 with high contrast can be captured by varying the amount of light incident on the light-receiving device.

[0051] [Pixel layout] The pixel layout of a display device according to one aspect of the present invention will be described. There are no particular limitations on the arrangement of subpixels of a pixel, and various methods can be applied. Examples of subpixel arrangements include stripe arrangements, S-stripe arrangements, matrix arrangements, delta arrangements, Bayer arrangements, and pentile arrangements.

[0052] Furthermore, the top surface shape of a sub-pixel can be, for example, a polygon such as a triangle, quadrilateral (including rectangles and squares), pentagon, or hexagon, or a polygon with rounded corners, an ellipse, or a circle. Here, the top surface shape of a sub-pixel corresponds to the top surface shape of the light-emitting region of a light-emitting device or the light-receiving region of a light-receiving device.

[0053] The pixels shown in Figures 2A to 2C include a sub-pixel G that emits green light, a sub-pixel B that emits blue light, a sub-pixel R that emits red light, and a sub-pixel S that has a light-receiving device. There are no particular restrictions on the arrangement order of the sub-pixels. When detecting light of a specific color with sub-pixel S, it is preferable to place a sub-pixel that emits light of that color next to sub-pixel S to improve detection accuracy. Furthermore, sub-pixels with more reliable light-emitting devices can be made smaller in size.

[0054] The pixels shown in Figure 2A have a stripe arrangement applied. In Figure 2A, an example is shown where sub-pixel R is located between sub-pixels B and S, but for example, sub-pixels R and G may be adjacent.

[0055] A matrix array is applied to the pixels shown in Figure 2B. In Figure 2B, an example is shown where sub-pixels R and S are located in the same row, and sub-pixels B and G are located in the same row; however, for example, sub-pixels R and G or sub-pixel B may be located in the same row. Similarly, an example is shown where sub-pixels R and B are located in the same column, and sub-pixels S and G are located in the same column; however, for example, sub-pixels R and G or sub-pixel S may be located in the same column.

[0056] The pixels shown in Figure 2C have a configuration in which a fourth subpixel is added to the S-stripe array. The pixels in Figure 2C show an example with a vertically elongated subpixel B and horizontally elongated subpixels R, G, and S, but the vertically elongated subpixel may be any of subpixels R, G, or S, and there are no restrictions on the arrangement order of the horizontally elongated subpixels.

[0057] Figure 2D shows an example where pixels 109a and 109b are arranged alternately. Pixel 109a has sub-pixels B, G, and S, and pixel 109b has sub-pixels R, G, and S. Figure 2D shows an example where both pixels 109a and 109b have sub-pixels G and S, but is not particularly limited. Having sub-pixel S in both pixels 109a and 109b is preferable as it can increase the resolution of the captured image. In this case, it is preferable to detect the light emitted by the sub-pixel (sub-pixel G in Figure 2D) that both pixels 109a and 109b have with sub-pixel S.

[0058] Figure 2E shows a modified example in which the subpixels of pixels 109a and 109b shown in Figure 2D each have a roughly rectangular top surface shape with rounded corners.

[0059] The pixel layout shown in Figure 2F employs a two-dimensional hexagonal close-packed structure. This hexagonal close-packed layout is preferable because it allows for a higher aperture ratio for each subpixel. Figure 2F shows an example where each subpixel has a hexagonal top surface shape.

[0060] Figure 2G shows a modified example in which the pixel shown in Figure 2F has a roughly hexagonal top surface shape with rounded corners.

[0061] Furthermore, in order to achieve the desired shape of the upper surface of the EL layer, a technique (OPC (Optical Proximity Correction) technique) may be used to pre-correct the mask pattern so that the design pattern and the transferred pattern match. Specifically, in the OPC technique, a correction pattern is added to the corners of the shape on the mask pattern.

[0062] The pixel shown in Figure 2H is an example where sub-pixels R, G, and B are arranged in a horizontal row, with sub-pixel S positioned below them.

[0063] The pixel shown in Figure 2I is an example where sub-pixels R, G, B, and X are arranged in a horizontal row, with sub-pixel S positioned below them.

[0064] For example, a sub-pixel X can be a sub-pixel that emits infrared (IR) light. Specifically, the sub-pixel X can be configured to have a light-emitting device that emits infrared (IR) light. In this case, it is preferable that the sub-pixel S detects infrared light. For example, while displaying an image using sub-pixels R, G, and B, the sub-pixel X can be used as a light source, and the reflected light emitted by the sub-pixel X can be detected by the sub-pixel S.

[0065] Furthermore, as sub-pixel X, for example, a sub-pixel that emits white (W) light or a sub-pixel that emits yellow (Y) light can be applied.

[0066] Furthermore, the sub-pixel X can be configured to include, for example, a light-receiving device. In this case, the wavelength ranges of the light detected by sub-pixel S and sub-pixel X may be the same, different, or partially common. For example, one of sub-pixel S and sub-pixel X may primarily detect visible light, while the other primarily detects infrared light.

[0067] [Sub-pixel S] Using the sub-pixel S, imaging for personal authentication can be performed using, for example, fingerprints, palm prints, irises, pulse patterns (including vein patterns and arterial patterns), or faces.

[0068] The smaller the light-receiving area of ​​the sub-pixel S, the narrower the imaging range becomes, which allows for suppression of blur in the captured image and improvement of resolution.

[0069] The resolution of the sub-pixel S is, for example, 100 ppi or more, preferably 200 ppi or more, more preferably 300 ppi or more, more preferably 400 ppi or more, and even more preferably 500 ppi or more, and can be 2000 ppi or less, 1000 ppi or less, or 600 ppi or less. In particular, by arranging the light-receiving device to have a resolution of 200 ppi or more and 600 ppi or less, preferably 300 ppi or more and 600 ppi or less, it can be suitably used for fingerprint imaging. Furthermore, a resolution of 500 ppi or more is preferable because it can comply with standards such as those of the National Institute of Standards and Technology (NIST). Assuming the resolution of the light-receiving device is 500 ppi, the size of one pixel is 50.8 μm, which is sufficient resolution to image the width of a fingerprint (typically 300 μm or more and 500 μm or less).

[0070] By setting the spacing of the light-receiving devices to be smaller than the distance between two protrusions of a fingerprint, preferably the distance between an adjacent recess and a protrusion, a clear image of the fingerprint can be obtained. The distance between recesses and protrusions in a human fingerprint is said to be approximately 200 μm. The width of a human fingerprint is said to be between 300 μm and 500 μm, or 460 μm ± 150 μm. For example, the spacing of the light-receiving devices is 400 μm or less, preferably 200 μm or less, more preferably 150 μm or less, even more preferably 100 μm or less, and even more preferably 50 μm or less, and 1 μm or more, preferably 10 μm or more, and more preferably 20 μm or more.

[0071] The light-receiving device of the sub-pixel S preferably detects visible light, and more preferably detects one or more of the following colors: blue, violet, blue-violet, green, yellow-green, yellow, orange, and red. The light-receiving device of the sub-pixel S may also detect infrared light.

[0072] Furthermore, the sub-pixel S can be used as a touch sensor (also called a direct touch sensor) or a non-contact sensor (also called a hover sensor, hover touch sensor, near touch sensor, or touchless sensor, etc.). Depending on the application, the wavelength of light detected by the sub-pixel S can be appropriately determined. For example, if the sub-pixel S can detect infrared light, touch detection becomes possible even in dark places.

[0073] Here, a touch sensor or a non-contact sensor can detect the proximity or contact of an object (such as a finger, hand, or pen). A touch sensor can detect an object when it comes into direct contact with an electronic device equipped with a display device according to one aspect of the present invention. A non-contact sensor can detect an object even if the object does not come into contact with the electronic device. For example, it is preferable that the display device can detect an object when the distance between the display device (or electronic device) and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it becomes possible to operate the electronic device without the object directly touching it; in other words, it becomes possible to operate the display device without contact (touchless). With the above configuration, the risk of the electronic device becoming dirty or scratched can be reduced, or the object can operate the electronic device without directly touching any dirt (e.g., dust or viruses) attached to it.

[0074] Furthermore, a display device according to one aspect of the present invention can have a variable refresh rate. For example, power consumption can be reduced by adjusting the refresh rate according to the content displayed on the display device (for example, within a range of 1 Hz to 240 Hz). In addition, the drive frequency of the touch sensor or non-contact sensor may be changed according to the refresh rate. For example, if the refresh rate of the display device is 120 Hz, the drive frequency of the touch sensor or non-contact sensor can be set to a frequency higher than 120 Hz (typically 240 Hz). This configuration makes it possible to achieve low power consumption and to increase the response speed of the touch sensor or non-contact sensor.

[0075] [Example of display device configuration 2] In the following section, the detailed configuration of the light-emitting device and light-receiving device of a display device according to one embodiment of the present invention will be described with reference to Figures 3 and 4.

[0076] A display device according to one aspect of the present invention may be a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed, a bottom-emission type that emits light toward the substrate on which the light-emitting device is formed, or a dual-emission type that emits light on both sides.

[0077] Figures 3 and 4 illustrate the concept using a top-emission type display device as an example.

[0078] In this embodiment, a display device having a light-emitting device that emits visible light and a light-receiving device that detects visible light will be described, but the display device may further have a light-emitting device that emits infrared light. Also, the light-receiving device may have a function to detect infrared light, or a function to detect both visible light and infrared light.

[0079] Figure 3 shows a top view of a display device according to one embodiment of the present invention.

[0080] In Figure 3, the area enclosed by the dotted line corresponds to one pixel. One pixel has a light-receiving device 110, a red light-emitting device 190R, a green light-emitting device 190G, and a blue light-emitting device 190B.

[0081] The top shapes of the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B are not particularly limited. The pixel layout shown in Figure 3 employs a hexagonal close-packed layout. This hexagonal close-packed layout is preferable because it allows for an increase in the aperture ratio of the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B. In a top view, the light-receiving area of ​​the light-receiving device 110 is rectangular, and the light-emitting areas of the light-emitting devices 190R, 190G, and 190B are each hexagonal.

[0082] In a top view (or plan view), a spacer 219 is provided between the green light-emitting device 190G and the blue light-emitting device 190B. The position and number of spacers 219 can be determined as appropriate.

[0083] <Display device 10A> Figure 4A shows an example of a cross-sectional view between the dashed lines A1 and A2 in Figure 3, and Figure 4B shows an example of a cross-sectional view between the dashed lines A3 and A4 in Figure 3.

[0084] As shown in Figures 4A and 4B, the display device 10A includes a light receiving device 110, a red light-emitting device 190R, a green light-emitting device 190G, and a blue light-emitting device 190B.

[0085] The light-emitting device 190R includes a pixel electrode 111R, a common layer 112, a light-emitting layer 113R, a common layer 114, and a common electrode 115. The light-emitting layer 113R contains an organic compound that emits red light 21R. In this embodiment, the case in which the pixel electrode 111R functions as an anode and the common electrode 115 functions as a cathode will be described as an example.

[0086] The light-emitting device 190R has the function of emitting red light. Specifically, the light-emitting device 190R is an electroluminescent device that emits light towards the substrate 152 by applying a voltage between the pixel electrode 111R and the common electrode 115 (see red light 21R).

[0087] The light-emitting device 190G has a pixel electrode 111G, a common layer 112, a light-emitting layer 113G, a common layer 114, and a common electrode 115. The light-emitting layer 113G has an organic compound that emits green light 21G. The light-emitting device 190G has the function of emitting green light 21G.

[0088] The light-emitting device 190B includes a pixel electrode 111B, a common layer 112, a light-emitting layer 113B, a common layer 114, and a common electrode 115. The light-emitting layer 113B contains an organic compound that emits blue light 21B. The light-emitting device 190B has the function of emitting blue light 21B.

[0089] The light-receiving device 110 has a pixel electrode 111S, a common layer 112, an active layer 113S, a common layer 114, and a common electrode 115. The active layer 113S contains an organic compound. The light-receiving device 110 has the function of detecting visible light. In this embodiment, similar to the light-emitting device, the pixel electrode 111S functions as the anode and the common electrode 115 functions as the cathode. By driving the light-receiving device 110 with a reverse bias applied between the pixel electrode 111S and the common electrode 115, the display device 10A can detect light incident on the light-receiving device 110, generate an electric charge, and extract it as an electric current.

[0090] The light-receiving device 110 has the function of detecting light. Specifically, the light-receiving device 110 is a photoelectric conversion device that receives light 22 incident from outside the display device 10B and converts it into an electrical signal. Light 22 can also be defined as light reflected by an object from the light-emitting device. In addition, light 22 may be incident on the light-receiving device 110 through a lens.

[0091] The pixel electrodes 111S, 111R, 111G, 111B, common layer 112, active layer 113S, light-emitting layers 113R, 113G, 113B, common layer 114, and common electrode 115 may each be a single-layer structure or a stacked structure.

[0092] The common layer 112 may have at least one of a hole injection layer, a hole transport layer, and an electron blocking layer. The function of the common layer 112 may differ between the light-emitting device and the light-receiving device 110. For example, when the common layer 112 has a hole injection layer, the hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device 110.

[0093] The common layer 114 may have at least one of the following: an electron injection layer, an electron transport layer, and a hole blocking layer. The function of the common layer 114 may differ between the light-emitting device and the light-receiving device 110. For example, when the common layer 114 has an electron injection layer, the electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device 110.

[0094] In the display device of this embodiment, an organic compound is used for the active layer 113S of the light-receiving device 110. The layers of the light-receiving device 110 other than the active layer 113S can have the same configuration as the light-emitting device (EL device). Therefore, by simply adding a step of forming the active layer 113S to the manufacturing process of the light-emitting device, the light-receiving device 110 can be formed in parallel with the formation of the light-emitting device. Furthermore, the light-emitting device and the light-receiving device 110 can be formed on the same substrate. Thus, the light-receiving device 110 can be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0095] In the display device 10A, an example is shown where the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B have a common configuration, except that the active layer 113S of the light-receiving device 110 and the light-emitting layers (light-emitting layers 113R, 113G, and 113B) of the light-emitting devices 190R, 190G, and 190B are manufactured differently. However, the configuration of the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B are not limited to this. In addition to the active layer 113S and the light-emitting layers (light-emitting layers 113R, 113G, and 113B), the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B may have layers that are manufactured differently from each other. It is preferable that the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B have one or more layers that are used in common (common layers). This allows the light-receiving device 110 to be incorporated into the display device without significantly increasing the number of manufacturing steps.

[0096] The display device 10A has a light receiving device 110, light emitting devices 190R, 190G, 190B, transistors 42S, 42R, 42G, and 42B, etc., between a pair of substrates (substrate 151 and substrate 152).

[0097] The pixel electrodes 111S, 111R, 111G, and 111B are located on the insulating layer 214. The pixel electrodes 111S, 111R, 111G, and 111B can be formed using the same material and the same process. This reduces the manufacturing cost of the display device and simplifies the manufacturing process.

[0098] The ends of the pixel electrodes 111S, 111R, 111G, and 111B are each covered by a partition wall 216. The pixel electrodes 111S, 111R, 111G, and 111B are electrically insulated from each other (or electrically isolated) by the partition wall 216.

[0099] An organic insulating film is preferred as the partition wall 216. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins. The partition wall 216 may be a layer that transmits visible light or a layer that blocks visible light. For example, a resin material containing a pigment or dye, or a brown resist material, may be used to form a partition wall that blocks visible light (colored).

[0100] The pixel electrode 111S is electrically connected to the source or drain of transistor 42S through an opening in the insulating layer 214. The pixel electrode 111R is electrically connected to the source or drain of transistor 42R through an opening in the insulating layer 214. Similarly, the pixel electrode 111G is electrically connected to the source or drain of transistor 42G through an opening in the insulating layer 214. And the pixel electrode 111B is electrically connected to the source or drain of transistor 42B through an opening in the insulating layer 214.

[0101] Transistors 42R, 42G, 42B, and 42S are in contact on the same layer (substrate 151 in Figures 4A and 4B).

[0102] Preferably, at least a portion of the circuit electrically connected to the light-receiving device 110 is formed using the same material and process as the circuit electrically connected to the light-emitting device. This allows for a thinner display device and simplifies the manufacturing process compared to forming the two circuits separately.

[0103] It is preferable that the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B are each covered with a protective layer 116. In Figures 4A and 4B, the protective layer 116 is provided in contact with the common electrode 115. By providing the protective layer 116, it is possible to suppress the ingress of impurities such as water into the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B, thereby improving the reliability of the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B. Furthermore, the protective layer 116 and the substrate 152 are bonded together by an adhesive layer 142.

[0104] A light-shielding layer 158 is provided on the surface of the substrate 152 that faces the substrate 151. The light-shielding layer 158 has openings at positions that overlap with the light-emitting devices 190R, 190G, and 190B, respectively, and at positions that overlap with the light-receiving device 110. In this specification, the position that overlaps with the light-emitting device specifically refers to the position that overlaps with the light-emitting region of the light-emitting device. Similarly, the position that overlaps with the light-receiving device 110 specifically refers to the position that overlaps with the light-receiving region of the light-receiving device 110.

[0105] In one embodiment of the present invention, the display surface of the display device allows light emitted from a light-emitting device to be extracted and light to be irradiated onto a light-receiving device to pass through. Preferably, the light emitted from the light-emitting device is extracted to the outside of the display device through an opening in the light-shielding layer 158 (or an area where the light-shielding layer is not provided), and preferably, light is irradiated onto the light-receiving device through an opening in the light-shielding layer 158 (or an area where the light-shielding layer is not provided).

[0106] The light-receiving device 110 detects light emitted from the light-emitting device that is reflected by an object. However, the light emitted from the light-emitting device may be reflected within the display device and enter the light-receiving device 110 as stray light without passing through the object. Such stray light becomes noise during light detection and is a factor that reduces the signal-to-noise ratio (S / N ratio). By providing a light-shielding layer 158, the effect of stray light can be suppressed. This reduces noise and improves the sensitivity of the sensor using the light-receiving device 110.

[0107] As the light-shielding layer 158, a material that blocks light emission from the light-emitting device can be used. Preferably, the light-shielding layer 158 absorbs visible light. As the light-shielding layer 158, for example, a black matrix can be formed using a metal material, or a resin material containing a pigment (such as carbon black) or dye. The light-shielding layer 158 may also have a laminated structure of a red color filter, a green color filter, and a blue color filter.

[0108] The spacer 219 is located on the partition wall 216 and, in a top view, is located between the light-emitting device 190G and the light-emitting device 190B.

[0109] As shown in Figure 4A, the display device 10A has a structure in which the active layer 113S and the light-emitting layer 113R are stacked in that order on the partition wall 216. Although Figure 4A clearly shows a structure in which the light-emitting layer 113R is provided on the active layer 113S, it is not limited to this. For example, a structure in which the active layer 113S is provided on the light-emitting layer 113R may also be used.

[0110] During the manufacturing process of the display device, the metal mask may come into direct contact with the spacer 219. In this case, as shown in Figure 4B, the light-emitting layers 113G and 113B are not formed on the spacer 219.

[0111] <Display device 10B> Figure 4C shows an example of a cross-sectional view between the dashed line A1 and A2 in Figure 3. Note that in the following description of the display device, the same configuration as described earlier may be omitted.

[0112] The display device 10B has a light-receiving device 110, a light-emitting device 190R, a transistor 42S, and a transistor 42R between a pair of substrates (substrate 151 and substrate 152).

[0113] The light-emitting device 190R has a pixel electrode 111R, a functional layer 112R, a light-emitting layer 113R, a functional layer 114R, and a common electrode 115. The light-emitting layer 113R has an organic compound that emits red light 21R. The light-emitting device 190R has the function of emitting red light.

[0114] The light-receiving device 110 has a pixel electrode 111S, a functional layer 112S, an active layer 113S, a functional layer 114S, and a common electrode 115. The active layer 113S contains an organic compound. The light-receiving device 110 has the function of detecting visible light.

[0115] Each of the functional layers 112R, 112S, 114R, and 114S may have a single-layer structure or a laminated structure.

[0116] The functional layer 112S is located on the pixel electrode 111S. The active layer 113S overlaps with the pixel electrode 111S via the functional layer 112S. The functional layer 114S is located on the active layer 113S. The active layer 113S overlaps with the common electrode 115 via the functional layer 114S. The functional layer 112S may have a hole transport layer. The functional layer 114S may have an electron transport layer.

[0117] The functional layer 112R is located on the pixel electrode 111R. The light-emitting layer 113R overlaps with the pixel electrode 111R via the functional layer 112R. The functional layer 114R is located on the light-emitting layer 113R. The light-emitting layer 113R overlaps with the common electrode 115 via the functional layer 114R. The functional layer 112R may have at least one of a hole injection layer, a hole transport layer, and an electron blocking layer. The functional layer 114R may have at least one of an electron injection layer, an electron transport layer, and a hole blocking layer.

[0118] The common electrode 115 is a layer used in common by the light-receiving device 110 and the light-emitting device 190R.

[0119] In the light-receiving device 110, the functional layer 112S, active layer 113S, and functional layer 114S, located between the pixel electrode 111S and the common electrode 115, can also be called organic layers (layers containing organic compounds). The pixel electrode 111S preferably has the function of reflecting visible light. The common electrode 115 has the function of transmitting visible light. Furthermore, when the light-receiving device 110 detects infrared light, the common electrode 115 has the function of transmitting infrared light. In addition, it is preferable that the pixel electrode 111S has the function of reflecting infrared light.

[0120] In the light-emitting device 190R, the functional layer 112R, light-emitting layer 113R, and functional layer 114R, located between the pixel electrode 111R and the common electrode 115, can also be called EL layers. The pixel electrode 111R preferably has the function of reflecting visible light. The common electrode 115 has the function of transmitting visible light.

[0121] In this embodiment, it is preferable that the light-emitting device of the display device has a microcavity structure. Therefore, it is preferable that one of the pair of electrodes of the light-emitting device has an electrode that is transparent to and reflective to visible light (a semi-transmissive / semi-reflective electrode), and the other has an electrode that is reflective to visible light (a reflective electrode). By having a microcavity structure in the light-emitting device, the light emitted from the light-emitting layer can be resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting device.

[0122] Furthermore, the semi-transparent / semi-reflective electrode can have a laminated structure consisting of a reflective electrode and an electrode that transmits visible light (also called a transparent electrode). In this specification, the reflective electrode, which functions as part of the semi-transparent / semi-reflective electrode, is sometimes referred to as a pixel electrode or common electrode, and the transparent electrode is sometimes referred to as an optical adjustment layer. However, the transparent electrode (optical adjustment layer) can also be said to have the function of a pixel electrode or common electrode.

[0123] The light transmittance of the transparent electrode shall be 40% or more. For example, it is preferable to use an electrode in the light-emitting device that has a transmittance of 40% or more for visible light (light with a wavelength of 400 nm or more and less than 750 nm). The visible light reflectance of the semi-transparent / semi-reflective electrode shall be 10% or more and 95% or less, preferably 30% or more and 80% or less. The visible light reflectance of the reflective electrode shall be 40% or more and 100% or less, preferably 70% or more and 100% or less. The resistivity of these electrodes shall be 1 × 10⁻⁶ -2 It is preferable that the value be Ωcm or less. Furthermore, when a light-emitting device that emits near-infrared light is used in the display device, it is preferable that the transmittance and reflectance of these electrodes for near-infrared light (light with a wavelength of 750 nm to 1300 nm) are also within the above numerical range.

[0124] At least one of the functional layers 112R, 112S, 114R, and 114S may function as an optical adjustment layer. By varying the film thickness of the functional layer in each color light-emitting device, it is possible to intensify and extract light of a specific color in each light-emitting device. In the case of a semi-transparent / semi-reflective electrode with a laminated structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes refers to the optical distance between a pair of reflective electrodes.

[0125] The display device 10B has a structure in which a functional layer 112S, an active layer 113S, a functional layer 114S, a functional layer 112R, a light-emitting layer 113R, and a functional layer 114R are stacked on the partition wall 216 in this order. However, the stacking order of these layers is not particularly limited. For example, the functional layer 112S, functional layer 112R, active layer 113S, light-emitting layer 113R, a functional layer 114S, and a functional layer 114R may be stacked in this order. Alternatively, the active layer 113S may be provided on the light-emitting layer 113R.

[0126] [Examples of methods for manufacturing display devices] Next, an example of a method for manufacturing a display device will be explained using Figures 5 to 7. Figures 5A to 7B mainly describe the manufacturing method for the structure including the light-emitting devices 190R, 190G, 190B, the light-receiving device 110, and the connection between the common electrode 115 and the conductive layer.

[0127] Thin films (insulating films, semiconductor films, and conductive films, etc.) that constitute display devices can be formed using sputtering, chemical vapor deposition (CVD), vacuum deposition, pulsed laser deposition (PLD), ALD, and other methods. CVD methods include plasma-enhanced CVD (PECVD) and thermal CVD. One type of thermal CVD is metal-organic CVD (MOCVD).

[0128] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by methods such as spin coating, dip coating, spray coating, inkjet printing, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, and knife coating.

[0129] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet can be used to fabricate light-emitting devices. Examples of vapor deposition methods include sputtering, ion plating, ion beam deposition, molecular beam deposition, vacuum deposition (PVD methods), and CVD. Functional layers included in the EL layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), and printing methods (inkjet, screen printing, offset printing, flexographic printing, gravure, or microcontact printing, etc.).

[0130] Furthermore, when processing the thin film that constitutes the display device, photolithography or the like can be used. Alternatively, the thin film may be processed by nanoimprint lithography, sandblasting, lift-off lithography, or the like. In addition, island-shaped thin films may be directly formed by a film deposition method using a shielding mask such as a metal mask.

[0131] There are two main methods of photolithography. One method involves forming a resist mask on the thin film to be processed, then processing the thin film by etching or other means, and removing the resist mask. The other method involves forming a photosensitive thin film, then exposing and developing it to process the thin film into the desired shape.

[0132] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture thereof. Other options include ultraviolet light, KrF laser light, or ArF laser light. Exposure may also be performed using immersion lithography. Furthermore, extreme ultraviolet (EUV) light or X-rays may be used as the light source for exposure. An electron beam can also be used instead of the light source. Using extreme ultraviolet light, X-rays, or an electron beam is preferable because it allows for extremely fine processing. Note that a photomask is not required when exposure is performed by scanning a beam such as an electron beam.

[0133] For etching thin films, methods such as dry etching, wet etching, and sandblasting can be used.

[0134] First, prepare the substrate. The substrate should have at least sufficient heat resistance to withstand subsequent heat treatment. If using an insulating substrate, glass, quartz, sapphire, ceramic, or organic resin substrates can be used. Additionally, semiconductor substrates such as single-crystal semiconductor substrates, polycrystalline semiconductor substrates, compound semiconductor substrates (such as silicon germanium), and SOI substrates can be used.

[0135] In particular, it is preferable to use a substrate on which a semiconductor circuit including semiconductor elements such as transistors is formed, either on the semiconductor substrate or an insulating substrate. The semiconductor circuit preferably comprises, for example, a pixel circuit, a gate line driving circuit (gate driver), a source line driving circuit (source driver), etc. In addition to the above, it may also include arithmetic circuits, memory circuits, etc.

[0136] An insulating layer 105 is provided at the top of the substrate. The insulating layer 105 has multiple openings that reach transistors, wiring, electrodes, etc., provided on the substrate. These openings can be formed by photolithography.

[0137] As the insulating layer 105, an inorganic insulating material or an organic insulating material can be used.

[0138] Next, a conductive film is deposited on the insulating layer 105. The conductive film can be deposited, for example, by sputtering or vacuum deposition. Then, by processing the conductive film, pixel electrodes 111R, 111G, 111B, 111S, and a conductive layer 111C are formed on the insulating layer 105 (Figure 5A). Specifically, a resist mask is formed on the conductive film by photolithography, and unnecessary parts of the conductive film are removed by etching. After that, the resist mask is removed, allowing the pixel electrodes 111R, 111G, 111B, 111S, and the conductive layer 111C to be formed in the same process.

[0139] Next, partition walls 216 are formed to cover the respective ends of the pixel electrodes 111R, 111G, 111B, 111S, and the conductive layer 111C (Figure 5A).

[0140] The partition wall 216 can be a single-layer or multi-layer structure using either an inorganic insulating film or an organic insulating film, or both.

[0141] Next, a common layer 112 is deposited on the pixel electrodes 111R, 111G, 111B, and 111S (Figure 5B).

[0142] As shown in Figure 5B, it is preferable that the common layer 112 is formed so as not to overlap the conductive layer 111C. For example, the deposition range of the common layer 112 can be controlled by using a mask for defining the deposition area (also called an area mask or rough metal mask, to distinguish it from a fine metal mask).

[0143] The common layer 112 can preferably be formed by vacuum deposition. However, it is not limited to this, and can also be formed by sputtering, transfer, printing, coating, or inkjet methods.

[0144] Next, an island-shaped light-emitting layer 113G is formed on the common layer 112, encompassing the region that overlaps with the pixel electrode 111G.

[0145] The light-emitting layer 113G is preferably formed by vacuum deposition via a fine metal mask (FMM). Alternatively, island-like light-emitting layers 113G may be formed using sputtering with an FMM or by inkjet printing.

[0146] Figure 5C shows the deposition of the light-emitting layer 113G via FMM151G. Figure 5C shows the deposition process using the so-called face-down method, where the substrate is inverted so that the surface to be deposited is facing downwards.

[0147] In deposition methods using FMMs, deposition often occurs over a wider area than the aperture pattern of the FMM. Therefore, as shown by the dashed line in Figure 5C, the light-emitting layer 113G can be deposited over a wider area compared to the aperture pattern of FMM 151G.

[0148] Next, using FMM151S, an island-shaped active layer 113S is formed on the common layer 112, encompassing the region overlapping with the pixel electrode 111S (Figure 6A).

[0149] Similar to the light-emitting layer 113G, the active layer 113S has a pattern that extends beyond the pixel electrode 111S.

[0150] Next, using FMM151R, an island-shaped light-emitting layer 113R is formed on the common layer 112, encompassing the region that overlaps with the pixel electrode 111R (Figure 6B).

[0151] Similar to the light-emitting layer 113G, the light-emitting layer 113R has a pattern that extends beyond the pixel electrode 111R. As a result, as shown in region SR in Figure 6B, a portion of the light-emitting layer 113R overlaps the active layer 113S. Also, as shown in region GR in Figure 6B, a portion of the light-emitting layer 113R overlaps the light-emitting layer 113G.

[0152] Next, using FMM151B, an island-shaped light-emitting layer 113B is formed on the common layer 112, encompassing the region that overlaps with the pixel electrode 111B (Figure 7A).

[0153] Similar to the light-emitting layer 113G, the light-emitting layer 113B has a pattern that extends beyond the pixel electrode 111B. As a result, as shown in region SB in Figure 7A, a portion of the light-emitting layer 113B overlaps the active layer 113S. Also, as shown in region GB in Figure 7A, a portion of the light-emitting layer 113B overlaps the light-emitting layer 113G.

[0154] The deposition order of the light-emitting layers 113R, 113G, 113B and the active layer 113S is not particularly limited. If there is a risk of side leakage due to any two of the light-emitting layers 113R, 113G, and 113B being in direct contact, it is preferable to form one of the two layers first, then form the active layer 113S, and then form the other of the two layers. This reduces the area in contact between the two layers and suppresses the occurrence of side leakage.

[0155] Next, a common layer 114 is formed on the light-emitting layers 113R, 113G, 113B and the active layer 113S (Figure 7B).

[0156] As shown in Figure 7B, it is preferable that the common layer 114 is formed so as not to overlap the conductive layer 111C. For example, the deposition range of the common layer 114 can be controlled by using a mask to define the deposition area.

[0157] The common layer 114 can preferably be formed by vacuum deposition. However, it is not limited to this, and can also be formed by sputtering, transfer, printing, coating, or inkjet methods.

[0158] Next, a common electrode 115 is formed on the common layer 114 (Figure 7B).

[0159] For the formation of the common electrode 115, for example, sputtering or vacuum deposition can be used. Alternatively, a film formed by deposition and a film formed by sputtering may be laminated together.

[0160] Furthermore, when depositing the common electrode 115, a mask may be used to define the deposition area.

[0161] Subsequently, a protective layer 116 is formed on the common electrode 115 (Figure 7B). Furthermore, by using an adhesive layer 142 to bond the substrate 152 onto the protective layer 116, the display device of this embodiment can be manufactured.

[0162] Methods for forming the protective layer 116 include vacuum deposition, sputtering, CVD, and ALD. The protective layer 116 may also be formed by laminating films formed using different deposition methods.

[0163] [Display device configuration example 3] In the following section, a more detailed configuration of a display device according to one embodiment of the present invention will be described with reference to Figures 8 to 11B.

[0164] <Display device 100A> Figure 8 shows a perspective view of the display device 100A, and Figure 9 shows a cross-sectional view of the display device 100A.

[0165] The display device 100A has a configuration in which substrate 152 and substrate 151 are bonded together. In Figure 8, substrate 152 is clearly indicated by a dashed line.

[0166] The display device 100A includes a display unit 162, a circuit 164, wiring 165, etc. Figure 8 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration shown in Figure 8 can also be described as a display module having the display device 100A, an IC, and an FPC.

[0167] For example, a scan line drive circuit can be used as circuit 164.

[0168] Wiring 165 has the function of supplying signals and power to the display unit 162 and the circuit 164. These signals and power are input to wiring 165 from an external source via FPC 172 or from IC 173.

[0169] Figure 8 shows an example in which IC 173 is provided on the substrate 151 using the COG method or COF method. IC 173 can be an IC having, for example, a scan line drive circuit or a signal line drive circuit. Note that the display device 100A and the display module may be configured without an IC. Alternatively, the IC may be mounted on the FPC using the COF method or the like.

[0170] Figure 9 shows an example of a cross-section obtained by cutting a portion of the display device 100A, including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, and a portion of the area including the end.

[0171] The display device 100A shown in Figure 9 has transistors 201, 205, 206, a light-emitting device 190R, a light-receiving device 110, and a protective layer 116 between substrates 151 and 152.

[0172] The substrate 152 and the protective layer 116 are bonded together by adhesive layers 142a and 142b. For sealing the light-emitting device 190R and the light-receiving device 110, a solid sealing structure or a hollow sealing structure can be applied. In Figure 9, the space surrounded by the substrate 152, the frame-shaped adhesive layer 142b, and the substrate 151 is filled with adhesive layer 142a, indicating a solid sealing structure. Alternatively, the frame-shaped adhesive layer may be omitted, and the substrate 152 and the protective layer 116 may be bonded together with a single type of adhesive layer. Furthermore, the space may be filled with an inert gas (such as nitrogen or argon) to apply a hollow sealing structure.

[0173] The light-emitting device 190R has a stacked structure in which the pixel electrode 111R, common layer 112, light-emitting layer 113R that emits red light, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214 side. The pixel electrode 111R is connected to the conductive layer 222b of the transistor 206 through an opening provided in the insulating layer 214.

[0174] The end of the pixel electrode 111R is covered by a partition wall 216. The pixel electrode 111R contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0175] The light-receiving device 110 has a stacked structure in which the pixel electrode 111S, common layer 112, active layer 113S, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214 side. The pixel electrode 111S is electrically connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. The end of the pixel electrode 111S is covered by a partition wall 216. The pixel electrode 111S contains a material that reflects visible light, and the common electrode 115 contains a material that transmits visible light.

[0176] The light emitted by the light-emitting device 190R is emitted towards the substrate 152. Light is also incident on the light-receiving device 110 through the substrate 152 and the adhesive layer 142a. It is preferable to use a material with high transmittance to visible light for the substrate 152.

[0177] Pixel electrodes 111R and 111S can be manufactured using the same material and process. Common layers 112 and 114, and common electrode 115 are used in both the light-receiving device 110 and the light-emitting device 190R. The light-receiving device 110 and the light-emitting device 190R can have the same configuration except for the difference in the configuration of the active layer 113S and the light-emitting layer 113R. This allows the light-receiving device 110 to be incorporated into the display device 100A without significantly increasing the manufacturing process.

[0178] The partition wall 216 covers the ends of the pixel electrode 111S and the pixel electrode 111R. On the partition wall 216, there is a region SR where the light-emitting layer 113R and the active layer 113S overlap each other.

[0179] By providing a protective layer 116 that covers the light-receiving device 110 and the light-emitting device 190R, it is possible to suppress the ingress of impurities such as water into the light-receiving device 110 and the light-emitting device 190R, thereby improving the reliability of the light-receiving device 110 and the light-emitting device 190R.

[0180] Transistors 201, 205, and 206 are all formed on the substrate 151. These transistors can be manufactured using the same materials and the same process.

[0181] On the substrate 151, insulating layers 211, 213, 215, and 214 are provided in this order. A portion of insulating layer 211 functions as a gate insulating layer for each transistor. A portion of insulating layer 213 functions as a gate insulating layer for each transistor. Insulating layer 215 is provided covering the transistors. Insulating layer 214 is provided covering the transistors and functions as a planarization layer. The number of gate insulating layers and insulating layers covering the transistors are not limited and may be a single layer or two or more layers, respectively.

[0182] It is preferable to use a material that does not easily allow impurities such as water and hydrogen to diffuse into at least one layer of the insulating layer covering the transistor. This allows the insulating layer to function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby improving the reliability of the display device.

[0183] It is preferable to use inorganic insulating films as insulating layers 211, 213, and 215. Examples of inorganic insulating films include silicon nitride films, silicon oxide nitride films, silicon oxide films, silicon nitride oxide films, aluminum oxide films, and aluminum nitride films. Further examples include hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide films, lanthanum oxide films, cerium oxide films, and neodymium oxide films. In addition, two or more of the above insulating films may be laminated together.

[0184] Here, organic insulating films often have lower barrier properties than inorganic insulating films. Therefore, it is preferable that the organic insulating film has an opening near the edge of the display device 100A. This prevents impurities from entering through the organic insulating film from the edge of the display device 100A. Alternatively, the organic insulating film may be formed so that its edge is inward from the edge of the display device 100A, so that the organic insulating film is not exposed at the edge of the display device 100A.

[0185] An organic insulating film is preferred for the insulating layer 214, which functions as a planarizing layer. Examples of materials that can be used as the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimidoamide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of these resins.

[0186] In the region 228 shown in Figure 9, an opening is formed in the insulating layer 214. This prevents impurities from entering the display unit 162 from the outside through the insulating layer 214, even when an organic insulating film is used for the insulating layer 214. Therefore, the reliability of the display device 100A can be improved.

[0187] In the region 228 near the edge of the display device 100A, it is preferable that the insulating layer 215 and the protective layer 116 are in contact with each other through an opening in the insulating layer 214. In particular, it is preferable that the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 116 are in contact with each other. This makes it possible to suppress the entry of impurities into the display unit 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100A can be improved.

[0188] The protective layer 116 preferably has at least one inorganic insulating film. The protective layer 116 may be a single-layer structure or a laminated structure of two or more layers. For example, the protective layer 116 may be a three-layer structure in which a first inorganic insulating film, an organic insulating film, and a second inorganic insulating film are laminated in this order.

[0189] Transistors 201, 205, and 206 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as source and drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0190] The transistor structure of the display device of this embodiment is not particularly limited. For example, planar transistors, staggered transistors, inverse staggered transistors, etc., can be used. Furthermore, either a top-gate or bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below the semiconductor layer in which the channel is formed.

[0191] Transistors 201, 205, and 206 employ a configuration in which a semiconductor layer on which a channel is formed is sandwiched between two gates. The transistors may be driven by connecting the two gates and supplying them with the same signal. Alternatively, the threshold voltage of the transistors may be controlled by applying a potential to control the threshold voltage to one of the two gates and a potential to drive the other gate.

[0192] The crystallinity of the semiconductor material used in the transistor is not particularly limited; amorphous semiconductors, single-crystal semiconductors, or semiconductors with crystalline properties other than single crystals (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors with crystalline regions in part) may be used. Using a single-crystal semiconductor or a semiconductor with crystalline properties is preferable because it can suppress the degradation of transistor characteristics.

[0193] The semiconductor layer of the transistor preferably has a metal oxide (also called an oxide semiconductor). In other words, the display device of this embodiment preferably uses a transistor (hereinafter referred to as an OS transistor) that uses a metal oxide in the channel formation region.

[0194] Examples of crystalline oxide semiconductors include CAAC (c-axis-aligned crystalline)-OS and nc (nanocrystalline)-OS.

[0195] Alternatively, a transistor using silicon as the channel-forming region (Si transistor) may be used. Examples of silicon include single-crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low-temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. LTPS transistors have high field-effect mobility and good frequency characteristics.

[0196] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (e.g., source driver circuits) can be fabricated on the same board as the display unit. This simplifies the external circuits implemented in the display device, reducing component and mounting costs.

[0197] OS transistors have extremely high field-effect mobility compared to transistors using amorphous silicon. Furthermore, OS transistors exhibit remarkably low source-drain leakage current (hereinafter also referred to as off-current) in the off state, allowing them to retain charge stored in a capacitor connected in series with the transistor for extended periods. Additionally, the application of OS transistors can reduce the power consumption of display devices.

[0198] Furthermore, the off-current value of an OS transistor per 1 μm channel width at room temperature is 1 aA (1 × 10⁻¹⁰). -18 A) Below, 1zA(1×10 -21 A) Less than or equal to 1yA(1×10 -24 A) It can be less than or equal to the following. Note that the off-current value of a Si transistor per 1 μm of channel width at room temperature is 1 fA (1 × 10⁻¹⁰). -15 A) More than 1pA (1×10 -12 A) The answer is as follows. Therefore, it can be said that the off-current of an OS transistor is about 10 orders of magnitude lower than that of a Si transistor.

[0199] Furthermore, to increase the luminescence brightness of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of the drive transistor included in the pixel circuit. Compared to Si transistors, OS transistors have a higher breakdown voltage between the source and drain, so a higher voltage can be applied between the source and drain of an OS transistor. Therefore, by using an OS transistor as the drive transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased, thereby increasing the luminescence brightness of the light-emitting device.

[0200] Furthermore, when the transistor operates in the saturation region, OS transistors exhibit smaller changes in source-drain current in response to changes in gate-source voltage compared to Si transistors. Therefore, by using OS transistors as driving transistors in the pixel circuit, the current flowing between the source and drain can be precisely controlled by changes in gate-source voltage, thereby allowing control of the current flowing to the light-emitting device. This allows for an increase in the number of grayscale levels in the pixel circuit.

[0201] Furthermore, in terms of the saturation characteristics of the current flowing when a transistor operates in the saturation region, OS transistors can supply a more stable current (saturation current) than Si transistors, even when the source-drain voltage gradually increases. Therefore, by using OS transistors as driving transistors, a stable current can be supplied to the light-emitting device even if there are variations in the current-voltage characteristics of the EL device. In other words, when operating in the saturation region, the source-drain current remains almost unchanged even when the source-drain voltage is increased, thus stabilizing the luminescence brightness of the light-emitting device.

[0202] As described above, by using OS transistors in the drive transistors included in the pixel circuit, it is possible to achieve "suppression of black level floating," "increase in luminescence brightness," "multi-gradation," and "suppression of variations in light-emitting devices."

[0203] The semiconductor layer preferably comprises, for example, indium, M (where M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0204] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also written as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also written as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also written as IAGZO).

[0205] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide is greater than or equal to the atomic ratio of M. Possible atomic ratios of metal elements in such an In-M-Zn oxide include: In:M:Zn=1:1:1 or near that composition, In:M:Zn=1:1:1.2 or near that composition, In:M:Zn=1:3:2 or near that composition, In:M:Zn=1:3:4 or near that composition, In:M:Zn=2:1:3 or near that composition, In:M:Zn=3:1:2 or near that composition, and In:M:Zn=4:2:3 Examples include compositions near the desired atomic ratio, such as In:M:Zn=4:2:4.1 or near that ratio, In:M:Zn=5:1:3 or near that ratio, In:M:Zn=5:1:6 or near that ratio, In:M:Zn=5:1:7 or near that ratio, In:M:Zn=5:1:8 or near that ratio, In:M:Zn=6:1:6 or near that ratio, In:M:Zn=5:2:5 or near that ratio, etc. Note that "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0206] For example, when describing a composition with an atomic ratio of In:Ga:Zn = 4:2:3 or a similar ratio, it includes cases where, when In is set to 4, Ga is between 1 and 3, and Zn is between 2 and 4. Also, when describing a composition with an atomic ratio of In:Ga:Zn = 5:1:6 or a similar ratio, it includes cases where, when In is set to 5, Ga is greater than 0.1 and 2 or less, and Zn is between 5 and 7. Furthermore, when describing a composition with an atomic ratio of In:Ga:Zn = 1:1:1 or a similar ratio, it includes cases where, when In is set to 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0207] The transistors in circuit 164 and the transistors in display unit 162 may have the same structure or different structures. The structures of the multiple transistors in circuit 164 may all be the same or there may be two or more different structures. Similarly, the structures of the multiple transistors in display unit 162 may all be the same or there may be two or more different structures.

[0208] All of the transistors in the display unit 162 may be OS transistors, all of the transistors in the display unit 162 may be Si transistors, or some of the transistors in the display unit 162 may be OS transistors and the rest may be Si transistors.

[0209] For example, by using both LTPS transistors and OS transistors in the display unit 162, a display device with low power consumption and high driving capability can be realized. Furthermore, a configuration combining LTPS transistors and OS transistors is sometimes referred to as LTPO. In a more preferable example, it is preferable to apply OS transistors to transistors that function as switches for controlling conduction and non-conduction between wiring, and LTPS transistors to transistors that control current.

[0210] For example, one of the transistors in the display unit 162 functions as a transistor for controlling the current flowing to the light-emitting device, and can also be called a drive transistor. One of the source and drain of the drive transistor is electrically connected to the pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor for this drive transistor. This makes it possible to increase the current flowing to the light-emitting device in the pixel circuit.

[0211] On the other hand, the other transistor in the display unit 162 functions as a switch for controlling the selection and deselection of pixels, and can also be called a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor for the selection transistor. This makes it possible to maintain the gradation of pixels even when the frame frequency is significantly reduced (e.g., 1 fps or less), and thus power consumption can be reduced by stopping the driver when displaying still images.

[0212] Thus, a display device according to one aspect of the present invention can combine a high aperture ratio, high resolution, high display quality, and low power consumption.

[0213] A connection portion 204 is provided in the region of substrate 151 where substrate 152 does not overlap. At the connection portion 204, wiring 165 is electrically connected to FPC 172 via conductive layer 166 and connection layer 242. The upper surface of the connection portion 204 exposes the conductive layer 166, which is obtained by processing the same conductive film as the pixel electrode 111S. This allows the connection portion 204 and FPC 172 to be electrically connected via the connection layer 242.

[0214] Various optical components can be placed on the outside of the substrate 152. Examples of optical components include polarizing plates, phase difference plates, light diffusion layers (such as diffusion films), anti-reflective layers, and light-gathering films. In addition, an antistatic film to suppress the adhesion of dust, a water-repellent film to make it difficult for dirt to adhere, a hard coat film to suppress the occurrence of scratches during use, and an impact-absorbing layer may also be placed on the outside of the substrate 152.

[0215] Substrates 151 and 152 can be made of glass, quartz, ceramic, sapphire, resin, etc., respectively. Using flexible materials for substrates 151 and 152 increases the flexibility of the display device, enabling the realization of a flexible display.

[0216] Various types of curing adhesives can be used as the adhesive layer, including UV-curing adhesives, reaction-curing adhesives, thermosetting adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. Materials with low moisture permeability, such as epoxy resins, are particularly preferred. Two-component mixed resins may also be used. Adhesive sheets may also be used.

[0217] As the connecting layer 242, an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), etc., can be used.

[0218] The light-emitting device in the display device of this embodiment may be of the top-emission type, bottom-emission type, or dual-emission type. A conductive film that transmits visible light is used for the electrode on the side from which light is extracted. It is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted.

[0219] A light-emitting device has at least a light-emitting layer. The light-emitting device may further have layers other than the light-emitting layer that include a material with high hole injection properties, a material with high hole transport properties (hole transport material), a hole blocking material, an electron blocking material, a material with high electron transport properties (electron transport material), a material with high electron injection properties, or a bipolar material (a material with high electron transport and hole transport properties). For example, the common layer 112 preferably has at least one of the hole injection layer, the hole transport layer, and the electron blocking layer. For example, the common layer 114 preferably has at least one of the hole blocking layer, the electron transport layer, and the electron injection layer.

[0220] The hole injection layer is a layer that injects holes from the anode into the hole transport layer, and is a layer containing a material with high hole injection capabilities. Examples of materials with high hole injection capabilities include aromatic amine compounds and composite materials containing hole transport materials and acceptor materials (electron-accepting materials).

[0221] The hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. The hole transport layer is a layer containing a hole-transporting material. The hole-transporting material is 1 × 10⁻¹⁶ -6 cm 2A substance having a hole mobility of at least / Vs is preferred. Note that substances other than these can also be used as long as they have higher hole transport properties than electrons. As the hole-transporting material, substances with high hole-transport properties such as π-electron rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton) and the like are preferred.

[0222] The electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. The electron transport layer is a layer containing an electron-transporting material. As the electron-transporting material, 1×10 -6 cm 2 A substance having an electron mobility of at least / Vs is preferred. Note that substances other than these can also be used as long as they have higher electron transport properties than holes. As the electron-transporting material, in addition to metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, etc., oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds and other substances with high electron transport properties can be used.

[0223] The electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a substance with high electron injection properties. As the substance with high electron injection properties, alkali metals, alkaline earth metals, or compounds thereof can be used. As the substance with high electron injection properties, a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used.

[0224] Examples of the electron injection layer include lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x(where X is any number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatrium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatrium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatrium (abbreviation: LiPPP), lithium oxide (LiO x Alkali metals such as cesium carbonate, alkaline earth metals, or compounds thereof can be used. Furthermore, the electron injection layer may be a multilayer structure of two or more layers. For example, the first layer of this multilayer structure may be lithium fluoride, and the second layer may be ytterbium.

[0225] Alternatively, an electron-transporting material may be used as the electron injection layer. For example, a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), or a triazine ring can be used.

[0226] Furthermore, it is preferable that the lowest unoccupied molecular orbital (LUMO) of an organic compound containing a lone pair of electrons is between -3.6 eV and -2.3 eV. In addition, the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound can generally be estimated by methods such as cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, and inverse photoelectron spectroscopy.

[0227] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviated as BPhen), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), diquinoxalino[2,3-a:2',3d'-c]phenazine (abbreviated as HATNA), and 2,4,6-tris[3'-(pyridine-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviated as TmPPPyTz) can be used in organic compounds containing lone pairs of electrons. NBPhen has a higher glass transition temperature (Tg) and superior heat resistance compared to BPhen.

[0228] The common layer 112, the light-emitting layer, and the common layer 114 may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the common layer 112, the light-emitting layer, and the common layer 114 can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0229] The luminescent layer is a layer containing a luminescent material. The luminescent layer may contain one or more types of luminescent materials. Suitable luminescent materials include those exhibiting colors such as blue, purple, blue-violet, green, yellow-green, yellow, orange, and red. Furthermore, materials emitting near-infrared light may also be used as luminescent materials.

[0230] The photodetector has an active layer between a pair of electrodes that functions as at least a photoelectric conversion layer. In this specification, one of the pair of electrodes may be referred to as the pixel electrode and the other as the common electrode.

[0231] In a photodetector, one electrode functions as the anode and the other as the cathode. The following explanation uses the example where the pixel electrode functions as the anode and the common electrode functions as the cathode. The photodetector can detect incoming light, generate an electric charge, and extract it as an electric current by applying a reverse bias between the pixel electrode and the common electrode. Alternatively, the pixel electrode may function as the cathode and the common electrode as the anode.

[0232] The active layer of a light-receiving device includes a semiconductor. Examples of such semiconductors include inorganic semiconductors such as silicon, and organic semiconductors containing organic compounds. In this embodiment, an example is shown in which an organic semiconductor is used as the semiconductor of the active layer. Using an organic semiconductor is preferable because the light-emitting layer and the active layer can be formed using the same method (for example, vacuum deposition), and the manufacturing equipment can be shared.

[0233] As for the n-type semiconductor material of the active layer, fullerene (for example, C 60 , C 70 Examples include electron-accepting organic semiconductor materials such as fullerene derivatives. Fullerenes have a shape like a soccer ball, and this shape is energetically stable. Both the HOMO and LUMO levels of fullerenes are deep (low). Because the LUMO level of fullerenes is deep, they have extremely high electron-accepting properties. Normally, when π-electron conjugation (resonance) spreads out in a plane, as in benzene, electron-donating properties increase, but because fullerenes have a spherical shape, they have high electron-accepting properties despite the large spread of π-electron conjugation. High electron-accepting properties allow for fast and efficient charge separation, making them useful as photodetectors. 60 , C 70 Both have a broad absorption band in the visible light region, and especially C 70 is C 60 Compared to [another compound], it is preferable because it has a larger π-electron conjugation system and a broad absorption band in the long-wavelength region. Other examples of fullerene derivatives include [6,6]-Phenyl-C71-butyric acid methyl ester (abbreviated as PC70BM), [6,6]-Phenyl-C61-butyric acid methyl ester (abbreviated as PC60BM), and 1',1'',4',4''-Tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2'',3''][5,6]fullerene-C60 (abbreviated as ICBA).

[0234] Furthermore, examples of n-type semiconductor materials include perylenetetracarboxylic acid derivatives such as N,N'-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (abbreviated as Me-PTCDI).

[0235] Furthermore, an example of an n-type semiconductor material is 2,2'-(5,5'-(thieno[3,2-b]thiophene-2,5-diyl)bis(thiophene-5,2-diyl))bis(methane-1-yl-1-ylidene)dimalonitrile (abbreviation: FT2TDMN).

[0236] Furthermore, examples of n-type semiconductor materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, and quinone derivatives.

[0237] Examples of p-type semiconductor materials for the active layer include electron-donating organic semiconductor materials such as copper(II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), quinacridone, and rubrene.

[0238] Furthermore, examples of p-type semiconductor materials include carbazole derivatives, thiophene derivatives, furan derivatives, and compounds having an aromatic amine skeleton. In addition, examples of p-type semiconductor materials include naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, rubrene derivatives, tetracene derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, and polythiophene derivatives.

[0239] The HOMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the HOMO level of electron-accepting organic semiconductor materials. The LUMO level of electron-donating organic semiconductor materials is preferably shallower (higher) than the LUMO level of electron-accepting organic semiconductor materials.

[0240] It is preferable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules with similar shapes tend to aggregate, and when molecules of the same type aggregate, their molecular orbital energy levels are close, which can improve carrier transport.

[0241] For example, the active layer is preferably formed by co-depositing an n-type semiconductor and a p-type semiconductor. Alternatively, the active layer may be formed by stacking an n-type semiconductor and a p-type semiconductor.

[0242] The photodetector may further include layers other than the active layer, such as a material with high hole transport properties, a material with high electron transport properties, or a bipolar material (a material with high electron and hole transport properties). Furthermore, it may also further include layers such as a material with high hole injection properties, a hole blocking material, a material with high electron injection properties, or an electron blocking material.

[0243] The light-receiving device may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also contain inorganic compounds. The layers constituting the light-receiving device can be formed by methods such as vapor deposition (including vacuum deposition), transfer, printing, inkjet, and coating.

[0244] For example, polymer compounds such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS), and inorganic compounds such as molybdenum oxide and copper iodide (CuI) can be used as hole transporting materials or electron blocking materials. In addition, inorganic compounds such as zinc oxide (ZnO) and organic compounds such as polyethyleneimine ethoxylate (PEIE) can be used as electron transporting materials or hole blocking materials. The light-receiving device may have, for example, a mixed film of PEIE and ZnO.

[0245] Furthermore, the active layer can use polymer compounds such as Poly[[4,8-bis[5-(2-ethylhexyl)-2-thienyl]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dioxo-4H,8H-benzo[1,2-c:4,5-c']dithiophene-1,3-diyl]]polymer (abbreviated as PBDB-T) or PBDB-T derivatives, which function as donors. For example, a method of dispersing the acceptor material in PBDB-T or a PBDB-T derivative can be used.

[0246] Furthermore, the active layer may use three or more types of materials. For example, to broaden the absorption wavelength range, a third material may be mixed with an n-type semiconductor material and a p-type semiconductor material. In this case, the third material may be a low-molecular-weight compound or a high-molecular-weight compound.

[0247] Materials that can be used for conductive layers such as the gate, source, and drain of transistors, as well as various wirings and electrodes that constitute display devices, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, as well as alloys mainly composed of these metals. Films containing these materials can be used as single layers or in a multilayer structure.

[0248] Furthermore, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene can be used as the light-transmitting conductive material. Alternatively, one or more metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, and alloy materials containing such metallic materials can be used. Alternatively, nitrides of such metallic materials (e.g., titanium nitride) may be used. When using metallic materials, alloy materials (or their nitrides), it is preferable to make them thin enough to be light-transmitting. In addition, a laminated film of the above materials can be used as a conductive layer. For example, using a laminated film of a silver-magnesium alloy and indium tin oxide is preferable because it can enhance conductivity. These can also be used for conductive layers of various wirings and electrodes that constitute a display device, as well as for conductive layers of display devices (conductive layers that function as pixel electrodes or common electrodes).

[0249] Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxide nitride, silicon nitride, and aluminum oxide.

[0250] <Display device 100B> Figures 10 and 11A show cross-sectional views of the display device 100B. The perspective view of the display device 100B is the same as that of the display device 100A (Figure 8). Figure 10 shows an example of a cross-section of the display device 100B when a portion of the area including the FPC 172, a portion of the circuit 164, and a portion of the display unit 162 are cut. Figure 11A shows an example of a cross-section of the display device 100B when a portion of the display unit 162 is cut. In Figure 10, an example of a cross-section is shown when a portion of the display unit 162 including the light receiving device 110 and the light-emitting device 190R that emits red light is cut. In Figure 11A, an example of a cross-section is shown when a portion of the display unit 162 including the light-emitting device 190G that emits green light and the light-emitting device 190B that emits blue light is cut.

[0251] The display device 100B shown in Figures 10 and 11A includes transistors 203, 207, 208, 209, and 210, light-emitting devices 190R, 190G, 190B, and a light-receiving device 110, etc., between substrates 153 and 154. Furthermore, protective layers may be provided on light-emitting devices 190R, 190G, 190B, and the light-receiving device 110.

[0252] The insulating layer 157 and the common electrode 115 are bonded together via an adhesive layer 142, and a solid encapsulation structure is applied to the display device 100B.

[0253] The substrate 153 and the insulating layer 212 are bonded together by an adhesive layer 155. The substrate 154 and the insulating layer 157 are bonded together by an adhesive layer 156.

[0254] The method for manufacturing the display device 100B involves first bonding a first manufacturing substrate, on which an insulating layer 212, transistors, light-receiving devices 110, light-emitting devices, etc. are provided, with a second manufacturing substrate, on which an insulating layer 157, etc. are provided, using an adhesive layer 142. Then, the first manufacturing substrate is peeled off and substrate 153 is attached to the exposed surface, and the second manufacturing substrate is peeled off and substrate 154 is attached to the exposed surface, thereby transferring the components formed on the first and second manufacturing substrates to substrates 153 and 154. It is preferable that substrates 153 and 154 are flexible. This increases the flexibility of the display device 100B.

[0255] Substrates 153 and 154 can be made from polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. One or both of substrates 153 and 154 may be made of glass of a thickness sufficient to provide flexibility.

[0256] The substrate of the display device in this embodiment may be a film with high optical isotropy. Examples of films with high optical isotropy include triacetylcellulose (TAC, also called cellulose triacetate) film, cycloolefin polymer (COP) film, cycloolefin copolymer (COC) film, and acrylic film.

[0257] Insulating layer 212 and insulating layer 157 can be made of an inorganic insulating film that can be used for insulating layer 211, insulating layer 213, and insulating layer 215, respectively.

[0258] The light-emitting device 190R has a stacked structure in which the pixel electrode 111R, common layer 112, light-emitting layer 113R, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214b side. The pixel electrode 111R is connected to the conductive layer 169R through an opening provided in the insulating layer 214b. The conductive layer 169R is connected to the conductive layer 222b of the transistor 208 through an opening provided in the insulating layer 214a. The conductive layer 222b is connected to the low-resistance region 231n through an opening provided in the insulating layer 215. In other words, the pixel electrode 111R is electrically connected to the transistor 208. The transistor 208 has the function of controlling the driving of the light-emitting device 190R.

[0259] Similarly, the light-emitting device 190G has a stacked structure in which the pixel electrode 111G, common layer 112, light-emitting layer 113G, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214b side. The pixel electrode 111G is electrically connected to the low-resistance region 231n of the transistor 209 via the conductive layer 169G and the conductive layer 222b of the transistor 209. In other words, the pixel electrode 111G is electrically connected to the transistor 209. The transistor 209 has the function of controlling the driving of the light-emitting device 190G.

[0260] The light-emitting device 190B has a stacked structure in which the pixel electrode 111B, common layer 112, light-emitting layer 113B, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214b side. The pixel electrode 111B is electrically connected to the low-resistance region 231n of the transistor 210 via the conductive layer 169B and the conductive layer 222b of the transistor 210. In other words, the pixel electrode 111B is electrically connected to the transistor 210. The transistor 210 has the function of controlling the driving of the light-emitting device 190B.

[0261] The light-receiving device 110 has a stacked structure in which the pixel electrode 111S, common layer 112, active layer 113S, common layer 114, and common electrode 115 are stacked in that order from the insulating layer 214b side. The pixel electrode 111S is electrically connected to the low-resistance region 231n of the transistor 207 via the conductive layer 168 and the conductive layer 222b of the transistor 207. In other words, the pixel electrode 111S is electrically connected to the transistor 207.

[0262] The ends of the pixel electrodes 111S, 111R, 111G, and 111B are covered by a partition wall 216. The pixel electrodes 111S, 111R, 111G, and 111B contain a material that reflects visible light, while the common electrode 115 contains a material that transmits visible light.

[0263] On the partition wall 216, there is a region SR where the light-emitting layer 113R and the active layer 113S overlap each other. As shown in Figure 11A, a spacer 219 is provided on the partition wall 216. During the manufacturing process of the display device, the metal mask may come into direct contact with the spacer 219. In this case, as shown in Figure 11A, the light-emitting layer 113G and the light-emitting layer 113B are not formed on the spacer 219.

[0264] The light emitted by the light-emitting devices 190R, 190G, and 190B is emitted towards the substrate 154. Light is also incident on the light-receiving device 110 through the substrate 154 and the adhesive layer 142. It is preferable to use a material with high transmittance to visible light for the substrate 154.

[0265] Pixel electrodes 111S, 111R, 111G, and 111B can be manufactured using the same material and process. Common layers 112 and 114, and common electrode 115 are used in common by the light-receiving device 110 and the light-emitting devices 190R, 190G, and 190B. The light-receiving device 110 and the light-emitting devices of each color can have the same configuration except for differences in the configuration of the active layer 113S and the light-emitting layer. This allows the light-receiving device 110 to be incorporated into the display device 100B without significantly increasing the manufacturing process.

[0266] A light-shielding layer may be provided on the substrate 153-side surface of the insulating layer 157. By providing a light-shielding layer, the range in which the light-receiving device 110 detects light can be controlled. Furthermore, by having a light-shielding layer 158, it is possible to suppress the incidence of light from the light-emitting devices 190R, 190G, and 190B to the light-receiving device 110 without passing through an object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0267] A connection portion 204 is provided in the region of substrate 153 that does not overlap with substrate 154. At the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via conductive layer 167, conductive layer 166, and connection layer 242. Conductive layer 167 can be obtained by processing the same conductive film as conductive layer 168. The upper surface of the connection portion 204 exposes conductive layer 166, which is obtained by processing the same conductive film as the pixel electrode 111S. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0268] Transistors 207, 208, 209, and 210 each have a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a semiconductor layer having a channel forming region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 that functions as a gate insulating layer, a conductive layer 223 that functions as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel forming region 231i. The insulating layer 225 is located between the conductive layer 223 and the channel forming region 231i.

[0269] The conductive layer 222a and the conductive layer 222b are each connected to the low-resistance region 231n via openings provided in the insulating layer 215. Of the conductive layer 222a and the conductive layer 222b, one functions as a source and the other functions as a drain.

[0270] In Figure 10, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low-resistance region 231n. For example, the structure shown in Figure 10 can be fabricated by processing the insulating layer 225 using the conductive layer 223 as a mask. In Figure 10, an insulating layer 215 is provided covering the insulating layer 225 and the conductive layer 223, and the conductive layers 222a and 222b are connected to the low-resistance region 231n, respectively, through openings in the insulating layer 215. Furthermore, a protective layer 116 covering the transistor may also be provided.

[0271] On the other hand, the transistor 202 shown in Figure 11B shows an example in which the insulating layer 225 covers the top and sides of the semiconductor layer. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively.

[0272] As described above, the display device of this embodiment has a light-receiving device and a light-emitting device in the display unit, and the display unit has both the function of displaying an image and the function of detecting light. This makes it possible to miniaturize and lighten the electronic device compared to cases where a sensor is provided outside the display unit or outside the display device. Furthermore, by combining it with a sensor provided outside the display unit or outside the display device, it is possible to realize a more multi-functional electronic device.

[0273] In the light-receiving device, at least one of the layers provided between a pair of electrodes can share a common structure with the light-emitting device (EL device). For example, the light-receiving device can have all layers other than the active layer share a common structure with the light-emitting device (EL device). That is, the light-emitting device and the light-receiving device can be formed over the same substrate only by adding a step of depositing the active layer to the manufacturing process of the light-emitting device. In addition, the light-receiving device and the light-emitting device can each have the pixel electrode and the common electrode formed using the same material and through the same process. Furthermore, by fabricating a circuit electrically connected to the light-receiving device and a circuit electrically connected to the light-emitting device using the same material and through the same process, the manufacturing process of the display device can be simplified. In this manner, a highly convenient display device incorporating the light-receiving device can be manufactured without involving complicated processes.

[0274] This embodiment can be appropriately combined with other embodiments. In addition, in this specification, when a plurality of configuration examples are illustrated in one embodiment, the configuration examples can be appropriately combined with each other.

[0275] (Embodiment 2) In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 12A and 12B.

[0276] A display device of one embodiment of the present invention includes a first pixel circuit including a light-receiving device and a second pixel circuit including a light-emitting device. The first pixel circuits and the second pixel circuits are each arranged in a matrix.

[0277] FIG. 12A illustrates an example of the first pixel circuit including the light-receiving device, and FIG. 12B illustrates an example of the second pixel circuit including the light-emitting device.

[0278] A pixel circuit PIX1 illustrated in FIG. 12A includes a light-receiving device PD, a transistor M1, a transistor M2, a transistor M3, a transistor M4, and a capacitor C1. Here, an example in which a photodiode is used as the light-receiving device PD is illustrated.

[0279] In the light-receiving device PD, the cathode is electrically connected to the wiring V1, and the anode is electrically connected to one of the source and the drain of the transistor M1. The transistor M1 has a gate electrically connected to the wiring TX, and the other of the source and the drain electrically connected to one electrode of the capacitor C1, one of the source and the drain of the transistor M2, and the gate of the transistor M3. The transistor M2 has a gate electrically connected to the wiring RES, and the other of the source and the drain electrically connected to the wiring V2. In the transistor M3, one of the source and the drain is electrically connected to the wiring V3, and the other of the source and the drain is electrically connected to one of the source and the drain of the transistor M4. The transistor M4 has a gate electrically connected to the wiring SE, and the other of the source and the drain electrically connected to the wiring OUT1.

[0280] A constant potential is supplied to each of the wiring V1, the wiring V2, and the wiring V3. When the light-receiving device PD is driven with a reverse bias, a potential lower than the potential of the wiring V1 is supplied to the wiring V2. The transistor M2 is controlled by a signal supplied to the wiring RES, and has a function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2. The transistor M1 is controlled by a signal supplied to the wiring TX, and has a function of controlling the timing at which the potential of the node changes in accordance with the current flowing through the light-receiving device PD. The transistor M3 functions as an amplification transistor that outputs an output corresponding to the potential of the node. The transistor M4 is controlled by a signal supplied to the wiring SE, and functions as a selection transistor for reading out an output corresponding to the potential of the node by an external circuit connected to the wiring OUT1.

[0281] The pixel circuit PIX2 illustrated in FIG. 12B includes a light-emitting device EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2. Here, an example in which a light-emitting diode is used as the light-emitting device EL is illustrated. In particular, an organic EL device is preferably used as the light-emitting device EL.

[0282] Transistor M5 has its gate electrically connected to wiring VG, one of its source or drain electrically connected to wiring VS, and the other of its source or drain electrically connected to one electrode of capacitor C2 and the gate of transistor M6. One of the source or drain of transistor M6 is electrically connected to wiring V4, and the other is electrically connected to the anode of light-emitting device EL and one of the source or drain of transistor M7. Transistor M7 has its gate electrically connected to wiring MS, and the other of its source or drain electrically connected to wiring OUT2. The cathode of light-emitting device EL is electrically connected to wiring V5.

[0283] Constant potentials are supplied to wirings V4 and V5, respectively. This allows the anode side of the light-emitting device EL to be at a high potential and the cathode side to be at a lower potential than the anode side. Transistor M5 is controlled by a signal supplied to wiring VG and functions as a selection transistor to control the selected state of the pixel circuit PIX2. Transistor M6 functions as a drive transistor that controls the current flowing to the light-emitting device EL according to the potential supplied to its gate. When transistor M5 is conducting, the potential supplied to wiring VS is supplied to the gate of transistor M6, and the luminescence brightness of the light-emitting device EL can be controlled according to that potential. Transistor M7 is controlled by a signal supplied to wiring MS and has the function of outputting the potential between transistor M6 and the light-emitting device EL to the outside via wiring OUT2.

[0284] Here, it is preferable to use transistors in which the semiconductor layer on which the channel is formed is made of a metal oxide (oxide semiconductor) for transistors M1, M2, M3, and M4 in the pixel circuit PIX1, and transistors M5, M6, and M7 in the pixel circuit PIX2.

[0285] Transistors using metal oxides, which have a wider bandgap and lower carrier density than silicon, can achieve extremely low off-currents. Therefore, this low off-current allows the charge stored in the capacitor connected in series with the transistor to be retained for extended periods. For this reason, it is preferable to use oxide semiconductor transistors for transistors M1, M2, and M5, which are connected in series with capacitor C1 or C2. Similarly, using oxide semiconductor transistors for other transistors can reduce manufacturing costs.

[0286] Furthermore, transistors M1 to M7 can also be transistors in which silicon is applied as the semiconductor in which the channel is formed. In particular, using highly crystalline silicon such as single-crystal silicon or polycrystalline silicon is preferable because it can achieve high field-effect mobility, enabling faster operation.

[0287] Alternatively, a configuration may be used in which one or more of transistors M1 to M7 are made using an oxide semiconductor, and the others are made using silicon.

[0288] Note that in Figures 12A and 12B, transistors are shown as n-channel transistors, but p-channel transistors can also be used.

[0289] It is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be formed side by side on the same substrate. In particular, it is preferable that the transistors in pixel circuit PIX1 and pixel circuit PIX2 be mixed within a single region and arranged periodically.

[0290] Furthermore, it is preferable to provide one or more layers having either or both transistors and / or capacitors in a position that overlaps with the light-receiving device PD or light-emitting device EL. This reduces the effective area occupied by each pixel circuit, enabling the realization of a high-definition light-receiving or display unit.

[0291] This embodiment can be combined with other embodiments as appropriate.

[0292] (Embodiment 3) In this embodiment, an electronic device according to one aspect of the present invention will be described with reference to Figures 13A to 16G.

[0293] The electronic device of this embodiment has a display device according to one aspect of the present invention. For example, the display device according to one aspect of the present invention can be applied to the display unit of an electronic device. Since the display device according to one aspect of the present invention has a function to detect light, it can perform biometric authentication on the display unit or detect touch operations (contact or proximity). This can enhance the functionality and convenience of the electronic device.

[0294] Examples of electronic devices include television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as other electronic devices with relatively large screens, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices.

[0295] The electronic device of this embodiment may have sensors (including those with the function of measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation).

[0296] The electronic device of the present embodiment can have various functions. For example, it can have a function of displaying various information (still images, moving images, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date or time, a function of executing various software (programs), a wireless communication function, a function of reading programs or data recorded in a recording medium, and the like.

[0297] An electronic device 6500 illustrated in FIG. 13A is a portable information terminal device that can be used as a smartphone.

[0298] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, buttons 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display unit 6502 has a touch panel function.

[0299] The display device of one embodiment of the present invention can be applied to the display unit 6502.

[0300] FIG. 13B is a schematic cross-sectional view including an end portion of the housing 6501 on the microphone 6506 side.

[0301] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, and the like are arranged in a space surrounded by the housing 6501 and the protective member 6510.

[0302] The display panel 6511, the optical member 6512, and the touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not illustrated).

[0303] Part of the display panel 6511 is folded back in a region outside the display unit 6502, and an FPC 6515 is connected to the folded portion. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on the printed circuit board 6517.

[0304] A flexible display according to one embodiment of the present invention can be applied to the display panel 6511. This makes it possible to realize an extremely lightweight electronic device. Furthermore, because the display panel 6511 is extremely thin, it is possible to incorporate a large-capacity battery 6518 while keeping the thickness of the electronic device low. In addition, by folding back a part of the display panel 6511 and placing the connection part with the FPC 6515 on the back of the pixel area, it is possible to realize an electronic device with a narrow bezel.

[0305] Figure 14A shows an example of a television system. The television system 7100 has a display unit 7000 incorporated into a housing 7101. Here, the housing 7101 is shown supported by a stand 7103.

[0306] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0307] The television device 7100 shown in Figure 14A can be operated using the operation switches on the housing 7101 and a separate remote control unit 7111. Alternatively, the display unit 7000 may be equipped with a touch sensor, and the television device 7100 can be operated by touching the display unit 7000 with a finger or the like. The remote control unit 7111 may have a display unit that displays information output from the remote control unit 7111. Channels and volume can be controlled and the image displayed on the display unit 7000 can be controlled using the operation keys or touch panel on the remote control unit 7111.

[0308] The television system 7100 includes a receiver and a modem. The receiver can receive general television broadcasts. Furthermore, by connecting to a wired or wireless communication network via the modem, it is possible to perform one-way (sender to receiver) or two-way (sender to receiver, or receiver to receiver) information communication.

[0309] Figure 14B shows an example of a notebook personal computer. The notebook personal computer 7200 has a casing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, etc. A display unit 7000 is incorporated into the casing 7211.

[0310] A display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0311] Figures 14C and 14D show examples of digital signage.

[0312] The digital signage 7300 shown in Figure 14C comprises a housing 7301, a display unit 7000, and a speaker 7303, etc. Furthermore, it may include LED lamps, operation keys (including a power switch or operation switch), connection terminals, various sensors, a microphone, etc.

[0313] Figure 14D shows a digital signage 7400 mounted on a cylindrical column 7401. The digital signage 7400 has a display unit 7000 that is provided along the curved surface of the column 7401.

[0314] In Figures 14C and 14D, a display device according to one embodiment of the present invention can be applied to the display unit 7000.

[0315] The larger the display area 7000, the more information can be provided at once. Furthermore, a larger display area 7000 is more eye-catching, which can, for example, enhance the effectiveness of advertising.

[0316] Applying a touch panel to the display unit 7000 is preferable because it not only allows images or videos to be displayed on the display unit 7000, but also enables intuitive operation by the user. Furthermore, when used for purposes such as providing route information or traffic information, intuitive operation can enhance usability.

[0317] Furthermore, as shown in Figures 14C and 14D, it is preferable that the digital signage 7300 or digital signage 7400 can be linked wirelessly with an information terminal 7311 or information terminal 7411 such as a smartphone owned by the user. For example, the advertising information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or information terminal 7411. Also, the display on the display unit 7000 can be switched by operating the information terminal 7311 or information terminal 7411.

[0318] Furthermore, the digital signage 7300 or digital signage 7400 can be used to run games using the screen of the information terminal 7311 or information terminal 7411 as the control device (controller). This allows a large number of users to participate in and enjoy the game simultaneously.

[0319] The personal computer 2800 shown in Figure 15A includes a housing 2801, a housing 2802, a display unit 2803, a keyboard 2804, and a pointing device 2805, etc. A secondary battery 2807 is provided inside housing 2801, and a secondary battery 2806 is provided inside housing 2802. The display unit 2803 is a display device according to one embodiment of the present invention and has a touch panel function. As shown in Figure 15B, the personal computer 2800 can be used as a tablet terminal by removing housings 2801 and 2802, and using only housing 2802.

[0320] In the modified personal computer shown in Figure 15C, a flexible display is applied to the display unit 2803. The secondary battery 2806 can be made bendable by using a flexible film for the outer casing. As a result, as shown in Figure 15C, the housing 2802, the display unit 2803, and the secondary battery 2806 can be folded for use. In this case, as shown in Figure 15C, a part of the display unit 2803 can also be used as a keyboard.

[0321] Furthermore, the housing 2802 can be folded so that the display unit 2803 faces inward, as shown in Figure 15D, or so that the display unit 2803 faces outward, as shown in Figure 15E.

[0322] The electronic equipment shown in Figures 16A to 16G includes a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or operation switch), connection terminals 9006, sensors 9007 (including functions for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation), a microphone 9008, etc.

[0323] In Figures 16A to 16G, a display device according to one embodiment of the present invention can be applied to the display unit 9001.

[0324] The electronic devices shown in Figures 16A to 16G have various functions. For example, they may have functions to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date or time, a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc. However, the functions of electronic devices are not limited to these and can have various functions. Electronic devices may have multiple display units. Furthermore, electronic devices may be equipped with a camera, etc., and have functions to capture still images or videos and save them to a recording medium (external or built into the camera), a function to display the captured images on a display unit, etc.

[0325] Details of the electronic equipment shown in Figures 16A to 16G will be explained below.

[0326] Figure 16A is a perspective view showing a personal digital assistant (PDA) 9101. The PDA 9101 can be used, for example, as a smartphone. The PDA 9101 may also be equipped with a speaker 9003, connection terminals 9006, sensors 9007, etc. The PDA 9101 can also display text and image information on multiple surfaces. Figure 16A shows an example where three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on other surfaces of the display unit 9001. Examples of information 9051 include notifications of incoming emails, SNS messages, and phone calls, the subject of emails and SNS messages, sender name, date and time, battery level, and signal strength. Alternatively, icons 9050 or the like may be displayed in the location where the information 9051 is displayed.

[0327] Figure 16B is a perspective view showing the personal digital assistant (PDA) 9102. The PDA 9102 has the function of displaying information on three or more sides of the display unit 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different sides. For example, a user can check information 9053, which is displayed in a position that can be observed from above the PDA 9102, while the PDA 9102 is stored in the breast pocket of their clothing. The user can check the display without taking the PDA 9102 out of their pocket and decide, for example, whether or not to answer a call.

[0328] Figure 16C is a perspective view showing the steering wheel of a vehicle. The steering wheel 41 has a rim 42, a hub 43, spokes 44, and a shaft 45, etc. A display unit 20 is provided on the surface of the hub 43. Of the three spokes 44, the lower spoke 44 is provided with a light-receiving unit 20b, the left spoke 44 is provided with multiple light-receiving units 20c, and the right spoke 44 is provided with multiple light-receiving units 20d. By holding the fingers of the hand 35 over the light-receiving unit 20b, the driver's fingerprint information can be obtained and authentication can be performed using this information. In addition, by touching the light-receiving units 20c and 20d, etc., the vehicle's navigation system, audio system, and communication system can be operated. Various operations are also possible, such as adjusting the rearview mirror, adjusting the side mirrors, turning the interior lights on and off and adjusting their brightness, and opening and closing the windows.

[0329] Figure 16D is a perspective view showing a wristwatch-type personal information terminal 9200. The personal information terminal 9200 can be used, for example, as a smartwatch (registered trademark). The display unit 9001 has a curved display surface, allowing it to display information along the curved surface. The personal information terminal 9200 can also make hands-free calls by communicating with, for example, a wireless communication headset. Furthermore, the personal information terminal 9200 can transmit data to other information terminals and be charged via a connection terminal 9006. Charging may be performed by wireless power supply.

[0330] Figures 16E to 16G are perspective views showing a foldable personal information terminal 9201. Figure 16E shows the personal information terminal 9201 in an unfolded state, Figure 16G shows it in a folded state, and Figure 16F shows a perspective view of the transition from one of Figures 16E or 16G to the other. The personal information terminal 9201 offers excellent portability in its folded state and excellent readability of the display due to its seamless, wide display area in its unfolded state. The display unit 9001 of the personal information terminal 9201 is supported by three housings 9000 connected by a hinge 9055. For example, the display unit 9001 can be bent with a radius of curvature of 0.1 mm to 150 mm.

[0331] This embodiment can be appropriately combined with other embodiments and examples. [Explanation of symbols]

[0332] GB: Area, GR: Area, MS: Wiring, PD: Light-receiving device, RES: Wiring, SB: Area, SE: Wiring, SR: Area, TX: Wiring, VG: Wiring, VS: Wiring, 10A: Display device, 10B: Display device, 20b: Light-receiving unit, 20c: Light-receiving unit, 20d: Light-receiving unit, 20: Display unit, 21B: Light, 21G: Light, 21R: Light, 22: Light, 35: Hand, 41: Handle, 42B: Transistor, 42G: Transistor, 42R: Transistor, 42S: Transistor, 42: Rim, 43: Hub, 44: Spoke, 45: Shaft, 50A: Display device, 50B: Display device, 51: Substrate, 52: Finger, 53: Layer, 55: Layer, 57: Layer, 59: Substrate, 100A: Display device, 100B: Display device, 105: Insulating layer, 109a: Pixel, 109b: Pixel, 110: Light receiving device, 111B: Pixel electrode, 111C: Conductive layer, 111G: Pixel electrode, 111R: Pixel electrode, 111S: Pixel electrode, 112R: Functional layer, 112S: Functional layer, 112: Common layer, 113B: Light-emitting layer, 113G: Light-emitting layer, 113R: Light-emitting layer, 113S: Active layer, 114R: Functional layer, 114S: Functional layer, 114: Common layer, 115: Common electrode, 116: Protective layer, 142a: Adhesive layer , 142b: Adhesive layer, 142: Adhesive layer, 151B: FMM, 151G: FMM, 151R: FMM, 151S: FMM, 151: Substrate, 152: Substrate, 153: Substrate, 154: Substrate, 155: Adhesive layer, 156: Adhesive layer, 157: Insulating layer, 158: Light-shielding layer, 162: Display unit, 164: Circuit, 165: Wiring, 166: Conductive layer, 167: Conductive layer, 168: Conductive layer, 169B: Conductive layer, 169G: Conductive layer, 169R: Conductive layer, 172: FPC, 173: IC, 190B: Light-emitting device, 190G: Light-emitting device, 190R: Light-emitting device, 201: Transistor, 202: Transistor, 203: Transistor, 204: Connector, 205: Transistor, 206: Transistor, 207: Transistor, 208: Transistor, 209: Transistor, 210: Transistor, 211: Insulating layer, 212: Insulating layer, 213: Insulating layer, 214a: Insulating layer, 214b: Insulating layer, 214: Insulating layer, 215: Insulating layer, 216: Partition, 219: Spacer, 220: Finger, 221: Conductive layer, 222a: Conductive layer, 222b: Conductive layer, 222: Fingerprint, 223: Conductive layer, 224: Contact area, 225: Insulating layer, 226: Imaging range, 228: Region231i: Channel formation region, 231n: Low resistance region, 231: Semiconductor layer, 242: Connection layer, 2800: Personal computer, 2801: Enclosure, 2802: Enclosure, 2803: Display unit, 2804: Keyboard, 2805: Pointing device, 2806: Rechargeable battery, 2807: Rechargeable battery, 6500: Electronic equipment, 6501: Enclosure, 6502: Display unit, 6503: Power supply unit 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective component, 6511: Display panel, 6512: Optical component, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television equipment, 7101: Housing, 710 3: Stand, 7111: Remote control unit, 7200: Notebook personal computer, 7211: Enclosure, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Enclosure, 7303: Speaker, 7311: Information terminal, 7400: Digital signage, 7401: Pillar, 7411: Information terminal, 9000: Enclosure, 9001: Display unit, 9003: Speaker, 9005: Operation keys, 9006: Connection terminal, 9007: Sensor, 9008: Microphone, 9050: Icon, 9051: Information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9101: Personal digital assistant, 9102: Personal digital assistant, 9200: Personal digital assistant, 9201: Personal digital assistant,

Claims

1. It has a light-receiving device and a light-emitting device, The light-receiving device comprises a first electrode, an insulating layer covering the end of the first electrode, an active layer on the first electrode and the insulating layer, and a second electrode on the active layer. The light-emitting device comprises a third electrode, an insulating layer covering the end of the third electrode, a light-emitting layer on the third electrode and on the insulating layer, and a second electrode on the light-emitting layer, and does not have an active layer. The light-receiving device does not have the light-emitting layer, In a top view, the active layer and the light-emitting layer have overlapping portions on the outside of the first electrode and on the outside of the third electrode. A display device in which the end of the active layer and the end of the light-emitting layer each have portions located on the insulating layer.

2. In claim 1, The light-receiving device and the light-emitting device have a common layer, The common layer has a portion located between the first electrode and the second electrode, and a portion located between the first electrode and the third electrode, in a display device.

3. In claim 1 or 2, A display device wherein the light-emitting layer has a portion located on the active layer.

4. In claim 1 or 2, A flexible display device.

5. A display module comprising the display device according to claim 1 or 2, and at least one of a connector and an integrated circuit.

6. The display module according to claim 5, An electronic device comprising at least one of a housing, a battery, a camera, a speaker, and a microphone.

Images