electronic machinery

Abstract

To provide a display device that facilitates imaging when imaging your own face looking at the screen in a dark place, and a display device that makes it easier to check your own face, etc. looking at the screen in a dark place.SOLUTION: A display device includes a first region and a second region. The first region has a function of being able to display an image of a subject. The second region has a function of being able to irradiate the subject with light. An electronic appliance includes the display device and an imaging device. The display device includes the first region and the second region. The first region has a function of being able to display the image of the subject obtained from the imaging device. The second region has a function of being able to irradiate the subject with light.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One aspect of the present invention relates to a light source, a display device, or a method for driving them for an imaging device. In particular, one aspect of the present invention relates to a program for an imaging device or display device, the program This relates to a recording medium on which data is recorded, and to an electronic device having such a recording medium.

[0002] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the technical field relates to a product, method, or method of manufacture. Or, the present invention. One aspect of this is a process, machine, manufacture, or composition. This relates to matter. Therefore, the invention disclosed more specifically in this specification One aspect of the technical field is semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, and lighting devices. Examples include power storage devices, memory devices, methods for driving them, or methods for manufacturing them. It can be listed. [Background technology]

[0003] Image sensors, such as image sensors, or electronic devices equipped with camera functions are being developed. In particular, the development of portable electronic devices equipped with an image sensor or camera function. This is becoming more active. In such portable electronic devices, the front surface of the electronic device has a large A display with a large screen is installed. Users can view the large screen while using electronics. Images and videos are captured using an image sensor located on the back of the device.

[0004] However, recently, image sensors are being used not only on the back of electronic devices, but also on the front of electronic devices. Electronic devices that are also provided on the surface have been developed. In other words, an image sensor and a displa y are arranged on the same plane in some developed electronic devices. In that case, the user's own face or the like viewed on the screen will be photographed by the image sensor provided on the front surface( ). See Patent Document 1. Further, when used as a videophone, while viewing the image of the call partner on the screen , the user's own image can be captured by the image sensor and transmitted to the call partner .

[0005] On the other hand, when photographing using an image sensor, the illuminance of the subject may be low. In such a case , a light source such as a flash or a strobe is used to illuminate the subject to increase the illuminance of the subject . This enables high-quality photographing (see Patent Document 2). Therefore, in portable electronic devices, a flash for illuminating the subject is often separately provided in addition to the image sensor. Meanwhile, in Patent Document 1, the display unit has a display function and an illumination function for the subject of the camera, and can switch between these functions . Electronic devices that can perform the above are disclosed. [Prior Art Documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Unexamined Patent Publication No. 2004-350208 [Patent Document 2] Japanese Unexamined Patent Publication No. 2007-110717 [Summary of the Invention] [Problems to be Solved by the Invention]

[0007] In an electronic device in which a camera unit having an image sensor and a display unit are arranged on the same surface side​ in which a display unit has a display function and an illumination function for a subject of a camera, and when these functions are switched for operation, if the display unit is switched to the illumination function operation before shooting, it may not be possible to accurately confirm how the image will be shot in some cases. Or conversely, when the display unit is switched to the illumination function operation only at the moment of shooting, if the brightness of the surrounding ambient light is low, since the illuminance of the subject is low, there are cases where only a pitch-black subject can be confirmed. There are such cases.

[0008] Accordingly, an aspect of the present invention aims to provide a display device, an electronic apparatus, or the like that facilitates shooting when capturing an image of one's own face or the like looking at a screen in a dark place, as one of its objects. as one of its objects. Alternatively, an aspect of the present invention aims to provide a display device, an electronic apparatus, or the like that makes it easy to confirm one's own face or the like looking at a screen in a dark place, as one of its objects. as one of its objects.

[0009] Alternatively, an aspect of the present invention aims to provide a display device capable of irradiating a subject with high-luminance illumination light, or an electronic apparatus or the like, as one of its objects. Alternatively, an aspect of the present invention aims to provide a display device that can be used as a light source for a subject, or an electronic apparatus or the like, as one of its objects. as one of its objects. Alternatively, an aspect of the present invention aims to provide a display device that can be used for security purposes, or an electronic apparatus or the like, as one of its objects. Alternatively, an aspect of the present invention aims to provide a display device with low power consumption, or an electronic apparatus or the like, as one of its objects. Further, an aspect of the present invention aims to provide a novel display device, or a novel electronic apparatus or the like, as one of its objects. Alternatively, an aspect of the present invention aims to provide a novel illumination device or the like, as one of its objects. One aspect of the present invention is a novel program or novel software. One of its purposes is to provide services such as [unclear / etc.].

[0010] Furthermore, the description of these problems does not preclude the existence of other problems. The approach does not need to solve all of these problems. This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings It is possible to extract other issues from the descriptions in the surfaces, claims, etc. [Means for solving the problem]

[0011] One aspect of the present invention is a display device having a first region and a second region, wherein the first region is The second area has the function of displaying an image of the subject, and the second area illuminates the subject with light. This is a display device characterized by having the ability to perform certain functions.

[0012] Alternatively, one aspect of the present invention is a display device having a first region and a second region, the first The first area has the function of displaying an image, and the second area is for illuminating with illumination light. This is a display device characterized by having the ability to do the following:

[0013] Alternatively, one aspect of the present invention is an electronic device having a display device and an imaging device, wherein the display device It has a first region and a second region, the first region is the image of the subject obtained from the imaging device. It has the function of displaying an image, and the second area can illuminate the subject with light. This is an electronic device characterized by having the function of [doing something].

[0014] Alternatively, in one aspect of the present invention, in the above configuration, the display device and the imaging device are located on the same plane. This is an electronic device characterized by being equipped with a special feature.

[0015] Alternatively, one aspect of the present invention is a program having first and second functions, wherein the first function The function has the capability to display an image of a subject in a first area of ​​the display device. The second function is to display an image in a second area of ​​the display device for illuminating the subject with light. This program is characterized by having the ability to do the following:

[0016] Alternatively, one aspect of the present invention is a program having first to third functions, wherein the first function The first function is to obtain an image of the subject using an imaging device, and the second function is to obtain an image of the subject using an imaging device. The first area of ​​the display device has the function of displaying an image of the subject, and the third area The function of this device is to display an image in the second area of ​​the display device for illuminating the subject with light. This program is characterized by having the ability to do the following: [Effects of the Invention]

[0017] According to one aspect of the present invention, when you take a picture of your face or other body parts that are looking at the screen in a dark place, In addition, a display device that facilitates photography can be provided. Or, one aspect of the present invention According to the information, this is a display device that makes it easier to see one's own face and other features when looking at the screen in dark places. We can provide things like that.

[0018] Alternatively, according to one aspect of the present invention, a table that can irradiate a subject with high-luminosity illumination light. Display devices and the like can be provided. Alternatively, according to one aspect of the present invention, for the subject A display device that can be used as a light source can be provided. Or, in one aspect of the present invention Therefore, it is possible to provide display devices that can be used for crime prevention purposes. According to one aspect of the present invention, it is possible to provide a display device with low power consumption. Alternatively, according to one aspect of the present invention, a novel display device and the like can be provided. According to one aspect of the present invention, a novel lighting device and the like can be provided. Or, the present invention According to one aspect, providing a new program or new software, etc. It is possible.

[0019] Furthermore, the description of these effects does not preclude the existence of other effects. The embodiment does not necessarily have to have all of these effects. Furthermore, other effects are... This will become clear from the description in the specification, drawings, claims, etc., and the specification, drawings Furthermore, it is possible to extract other effects from the descriptions in the claims and other documents. [Brief explanation of the drawing]

[0020] [Figure 1] A diagram illustrating electronic devices. [Figure 2] A diagram illustrating electronic devices. [Figure 3] A diagram illustrating electronic devices. [Figure 4] A diagram illustrating a flowchart. [Figure 5] A diagram illustrating electronic devices. [Figure 6] A diagram illustrating electronic devices. [Figure 7] A diagram illustrating electronic devices. [Figure 8] A diagram illustrating electronic devices. [Figure 9] A diagram illustrating electronic devices. [Figure 10] A diagram illustrating electronic devices. [Figure 11] A diagram illustrating electronic devices. [Figure 12]A diagram illustrating electronic devices. [Figure 13] A diagram illustrating electronic devices. [Figure 14] A diagram illustrating electronic devices. [Figure 15] A diagram illustrating electronic devices. [Figure 16] A diagram illustrating electronic devices. [Figure 17] A diagram illustrating electronic devices. [Figure 18] A diagram illustrating electronic devices. [Figure 19] A diagram illustrating electronic devices. [Figure 20] A diagram illustrating electronic devices. [Figure 21] A diagram illustrating electronic devices. [Figure 22] A diagram illustrating the network configuration. [Figure 23] A diagram illustrating electronic devices. [Figure 24] A diagram illustrating a display device. [Figure 25] A diagram illustrating the display module. [Figure 26] An example of a light-emitting device configuration. [Figure 27] An example of a light-emitting device configuration. [Figure 28] An example of a light-emitting device configuration. [Figure 29] Cross-sectional TEM images and local Fourier transform images of oxide semiconductors. [Figure 30] A diagram showing the nanobeam electron diffraction pattern of an oxide semiconductor film, and a diagram showing an example of a transmission electron diffraction measurement device. [Figure 31] A figure and a planar TEM image illustrating an example of structural analysis by transmission electron diffraction measurement. [Modes for carrying out the invention]

[0021] (Embodiment 1) This embodiment describes a method for driving an electronic device according to one aspect of the present invention.

[0022] As shown in Figure 1(A), the first surface (for example, the front surface) of the electronic device 101 has, for example, The system is equipped with a display device 102 and a camera unit 103.

[0023] The display device 102 has the function to display various information. 102 has the function of irradiating light to the outside and outputting light. The display device is shown in the table. It can also be called a display unit or display panel.

[0024] The camera unit 103 includes, for example, a lens, an image sensor or other image sensor, and so on. It has the ability to acquire images such as moving images and still images. The camera unit can also be called an imaging device.

[0025] First, let's consider the case of the first mode. This is, for example, when performing normal work. Therefore, the first mode is the first operating mode, the normal mode, or the normal operating mode. This can also be called a "creation mode." In this mode, the display device 102 is used to display images and text. Viewing text and photos, displaying images, text, and photos, and inputting text. It is possible to do so. The inputs are, for example, buttons, switches, and provided on the electronic device 101. This is done through at least one sensor, or the input is, for example, a display device. 102 and the touch sensors, keyboard, mouse, or various sensors located on top of it This is done through at least one of them. Therefore, the display device 102 is an input device It may also have the following functions. Alternatively, the input to electronic device 101 may be wired or wireless. , connected keyboard, mouse, pointing pad, buttons, or pen, etc. The input is through at least one sensor provided in the electronic device 101. (Proximity, direction, magnetic field, linear acceleration, brightness, gyroscope, gravity, acceleration, atmospheric pressure, temperature, image) This is done via at least one of the following: infrared rays, ultraviolet rays, etc.

[0026] Next, we will discuss the case of the second mode. This is, for example, the front surface of the electronic device 101. This corresponds to the case where photography is performed using the camera unit 103 provided therein. Therefore, the second The mode can be set to: second operation mode, shooting mode, shooting operation mode, lighting mode, or lighting. This can also be called an operating mode. In this mode, the display device 102 has at least, Area 104 and area 106 are provided. Area 104 is, for example, through the camera unit 103. The image of subject 105 obtained is displayed. In other words, region 104 is the viewfinder. It can function as a finder area. Area 106 is, for example, subject 105 It functions as a light source to illuminate the area. In other words, area 106 is a flash illumination area. It can function as a second mode, that is, a shooting mode. The display device 102 has lighting functions such as flash and strobe, and a display that shows an image. It will have both a display function and a display function at the same time. These two functions are provided by the camera unit 103 This can be achieved simultaneously while operating. In other words, these two machines When the camera unit 103 is taking pictures, or when it is preparing to take pictures, At least one of the following times, such as when checking the single or after finishing shooting, Sometimes, it can be achieved.

[0027] Note that region 104 and region 106 may be fixed regions in the display device 102. Furthermore, the size, position, and other aspects of the stone may be changed at any time.

[0028] Furthermore, it is desirable that region 104 and region 106 be located on the same display device. i. By providing region 104 and region 106 on the same display device, those regions At least one of the size or position of can be freely changed. However, according to the present invention The embodiment is not limited to this. For example, region 104 and region 106 are different It may be provided on a display device. For example, if area 104 is provided on the first display device Furthermore, the second display device may be provided with region 106.

[0029] Here, as an example, it is desirable that region 106 be displayed with a generally uniform brightness. It seems that when displayed with generally uniform brightness, images with the same gradation within area 106 will appear. It can be said that this is equivalent to displaying an image. An image with the same tonal range would be that image. The color should preferably be white. This will allow us to photograph subject 105 in the correct color. Furthermore, it is desirable to make the brightness of region 106 as high as possible. Therefore, as an example... For example, the brightness of area 106 is the brightest level in the first mode for normal operation. It is desirable that the brightness is equivalent to the brightness when the tone is displayed. However, in the present invention The embodiment is not limited to this. The brightness of area 106 can be freely set by the user. And you can make it changeable.

[0030] Figure 1(B) shows a schematic diagram viewed from the side. From area 106 of the display device 102, illumination light 1 07A is shone towards the subject 105. Then, the reflected light 10 7B enters the camera unit 103. Furthermore, ambient light is shone towards the subject 105, This may be reflected by the subject 105 and enter the camera unit 103. The image obtained in 03 is displayed in area 104 of the display device 102.

[0031] These controls are implemented by at least one of either hardware or software. For example, as an application for the camera function, dedicated software or dedicated application These operations are controlled by the program, enabling the aforementioned operations and functions. Or, in an application with a certain function, some of the software's functions cause These actions are controlled, and the actions and functions described above are realized.

[0032] By using this configuration, even when the surrounding ambient light is dark, the subject 105 can see clearly. Since the illumination light 107A emitted from area 106 is shining on the subject 105, the subject 105 is kept in a bright state. This is possible. Then, the camera unit 103 receives the reflected light 107B and obtains a clear image. Furthermore, in area 104 of the display device 102, the image obtained from the camera unit 103 is displayed. Since it displays this information, you can check in real time what kind of images are being taken. This is possible. Therefore, subject 105 is taking a picture of himself and is seeing how he is being photographed. It is possible to confirm this.

[0033] After this, the actual shooting of still and moving images is performed, and the image data obtained is stored in a memory device. Alternatively, the images are saved to a storage medium. After shooting is complete, the system returns to normal mode and displays the image. The saved image data can be viewed using the display device 102. Since the shadow has ended, it is not necessarily required to provide the area 106 that will function as lighting. In that case, the entire display device 102 can be used to view the image.

[0034] As an example, Figure 2 shows how email is operated in normal mode.

[0035] Next, Figure 3 shows an example of the screen of the display device 102 when the electronic device 101 is started up. The display device 102 shows at least one of the following: letters, numbers, or icons. In both areas 104 and 106, there are small amounts of text, numbers, or icons. At the very least, one is displayed. In other words, area 104 and area 106 are, respectively, Depending on the mode, at least one of the following will be displayed: letters, numbers, icons, or images. It has the ability to do so.

[0036] Furthermore, when shooting video with the camera unit 103, for example, the display will remain on throughout the shooting process. Location 102 is provided with at least region 104 and region 106, and in region 106, The illumination light 107A continues to shine on the subject 105, and the shooting status is displayed in area 104. It is desirable that this continues. This ensures that even in moving images, the subject is properly illuminated. The 105 can be used to take pictures within the appropriate shooting range.

[0037] Next, Figure 4 shows an example flowchart for taking a picture using the camera unit 103. In other words, here is an example flowchart for taking a picture in the second mode.

[0038] In step 130, first, activate the camera function. One way to activate it is, for example... As shown in Figure 3, the camera software (app) displayed on the display device 102 is shown. Double-click or touch the 115A icon (of the application) , to start up. Alternatively, press the button or switch provided on the electronic device 101 to start up. In terms of software, it includes not only software specifically for cameras, but also software that includes camera functionality. It would also be acceptable to use something like this. For example, when used as part of a function, tele Examples include phone calls or social networking services (SNS). .

[0039] Next, in step 131, the display device 102 is provided with region 104 and region 106. In this case, the display device 102 may have another area. Alternatively, Even if there is another area within area 104 or area 106 where a different display is being shown Good. Other displays shown here include graphs showing image characteristics, time, and battery level. This could be at least one of the following: charging status or radio wave conductivity.

[0040] Next, in step 132, light is shone from area 106 on the display device 102 onto the subject 105. Illuminate with light 107A. The intensity and color of the illumination light 107A may be changed at this time. At this time, ambient light may be shining towards the subject 105.

[0041] Next, in step 133, reflected light 107B from the subject 105 is directed to the camera unit 103. It enters. Of course, the camera unit 103 receives light other than reflected light 107B, for example, light from surrounding objects. These lights also enter. As a result, photoelectric conversion processing is performed in the camera unit 103.

[0042] Note that in some cases, steps 132 and 133 can be considered to occur almost simultaneously. be.

[0043] Next, in step 134, area 104 on the display device 102 is displayed from the camera unit 103. The image of subject 105 obtained is displayed. This image is for the viewfinder function. Therefore, it is used to confirm what kind of shooting will be done. The display is rewritten to: In other words, the subject 105 obtained from the camera unit 103 The moving image will be continuously displayed as a video in area 104 on the display device 102.

[0044] Next, in step 135, the state of the subject 105 is checked using area 104. In other words, check the image displayed in area 104 to see if it is OK to take a picture. Furthermore, at this time, depending on the situation in region 104, the intensity and color of the illumination light 107A may be changed. For example, if the illuminance of subject 105 is weak, the intensity of illumination light 107A may be increased. Alternatively, if the shooting magnification is not appropriate, the camera unit 103 uses the zoom function, You may enlarge or reduce the image to adjust the shooting area to an appropriate range.

[0045] Next, in step 136, the camera unit 103 performs an image capture. The image capture is performed by the display device 1 You can also press the shooting button displayed in 02 to start shooting. Alternatively, you can use electronic device 10 You can also take a picture by pressing the button or switch located at 1. Alternatively, you can turn on the power. Press the capture button on the device connected via a network such as a communication network to take a picture. You may do so. At this time, you may take still images or video images. You may also take multiple still images in succession.

[0046] Next, in step 137, the captured data is saved to a storage device. The location may be a memory device provided in the electronic device 101, or it may be a telecommunications device. It may also be a storage device connected via a network such as telecommunications. This could be a wired network or a wireless network. Alternatively, volatile memory devices such as DRAM may be used as storage devices. Or, flash memory. Non-volatile storage devices such as memory, hard disks, DVDs, optical discs, or ROMs It can also be placed. Alternatively, as a storage device, semiconductor memory, magnetic memory, magneto-optical memory, Alternatively, it may have organic memory, etc.

[0047] Thus, after the shooting process is complete, you return to the first mode, that is, the normal operation, and shoot The downloaded data can be viewed or displayed using the display device 102. ru.

[0048] Please note that this step order is just one example, and the order of some steps may be reversed or multiple steps may be performed. When the steps are performed simultaneously, or when one step is divided into multiple steps There are also others.

[0049] By operating in this manner, the display device 102 performs the functions of displaying and lighting. It can have both capabilities. Note that both functions are executed simultaneously in the camera. It is desirable that part 103 is operating. However, one embodiment of the present invention is However, it is not limited to this. Even when the camera unit 103 is not operating, the display device 102 may also display, Region 104 and region 106 may be provided.

[0050] Here, there is a region 104 that has the function of a viewfinder and a region 106 that has the function of illumination. Let's consider the arrangement. First, in Figure 1(A), as an example, the side closer to the camera unit 103. Region 104 is provided there. And, on the side furthest from the camera unit 103, region 106 is provided. It is being positioned in this way, when region 104 is located on the side closer to the camera unit 103. If subject 105 is a human, it is easier to make eye contact with subject 105. In other words, the subject If 105 is looking at area 104 and checking the situation, its line of sight will be close to the camera unit 103. It becomes easier for the subject to come closer. Therefore, if you proceed with the shoot as is, the subject's gaze will be directed towards the camera. It becomes easier to make it look like you're looking at 103. As a result, the captured image will also have the gaze properly aligned. This makes it easier to capture still and moving images.

[0051] Furthermore, because region 106 is far from the camera unit 103, the illumination light emitted from region 106 This makes it less likely for noise to enter the camera unit 103. As a result, the contrast of the captured image is reduced. It can improve this.

[0052] However, the embodiments of the present invention are not limited thereto. For example, as shown in Figure 5 The region 106 may be provided on the side closer to the camera unit 103. By placing it on the side closer to the subject 105, it becomes easier to illuminate the subject 105 perpendicularly with illumination light 107A. As a result, shadows are less likely to form on subject 105, making it easier to take beautiful images. Yes.

[0053] Note that in Figures 1(A) and 5, there is one region 104 and one region 106. Although we have described the case in which this is the case, the embodiments of the present invention are not limited thereto. Each may be provided in multiple units. For example, as shown in Figure 6, the lighting area is region 10 It is also possible to divide the area into two parts, 6A and area 106B, and arrange them accordingly. By positioning it, the illumination light can be directed onto the subject 105 from different areas, that is, from different angles. Because it can be illuminated, shadows are less likely to form on subject 105, making it easier to take clear images. .

[0054] Note that in Figures 1(A), 5, and 6, region 104 and region 106 are arranged vertically side by side. Although this has been done, one embodiment of the present invention is not limited thereto. Arranged side by side in the horizontal direction. Alternatively, as shown in Figure 7(A), region 104 may be included within region 106. It would also be acceptable to arrange them in a way that makes them appear to be present.

[0055] Furthermore, at least one of the following characteristics of region 106: size, area, shape, position, color, or brightness. This may be changed depending on the situation. Also, the light intensity irradiated from region 106 may be changed depending on the situation. You may change it accordingly. Similarly, the size, area, shape, position, color, or of region 104. At least one of the parameters, such as brightness, may be changed depending on the situation. For example, in Figure 7(A) Figure 7(B) shows an example of what happens when the size of region 104 is reduced. Region 104 Changes can be made by touching the screen with your finger and dragging the outer frame of area 104. And it can be executed.

[0056] Alternatively, a dedicated user interface may be provided to control the screen. Figure 8(A The example shown is when slider 108A is placed. Move button 108AA left or right. By doing so, the value can be changed. Therefore, with this slider 108A, Figure 8(B) shows an example of what happens when the size of area 106 is reduced. Slider 108A By moving button 108AA to the left, area 106 becomes smaller.

[0057] In Figure 8(B), the size of region 106 was changed by slider 108A. However, the size of something else may be changed. For example, by slider 108A, the area You may change the brightness of area 106. Alternatively, you may change the image of area 106.

[0058] Alternatively, the color of area 106 may be changed using the slider. Figure 9 shows the slider for blue. - Using slider 108B for green, slider 108C for red, and slider 108D for red, An example of changing the color of area 106 is shown. Button 108BA for blue, button 108CA for green. Furthermore, by moving the red button 108DA left or right, the color of area 106 can be changed. It is possible to do so.

[0059] Alternatively, for example, an example of changing the screen position of area 104 is shown in Figures 10 and 11. As shown in Figures 10(A) and 11(A), first, a contact object 111 such as a finger or pen Then, touch area 104. Then, as shown in Figures 10(B) and 11(B), Drag and move area 104 to the left or down. Then move it to the desired location. After dragging, the contact object 111 is removed from the screen as shown in Figures 10(C) and 11(C). Release. This action allows you to change the position of area 104 on the screen. Similarly, if you want to change the position of region 106, you can move it in the same way. Examples are shown in Figure 12(A), Figure 12(B), Figure 12(C), Figure 13(A), Figure 13(B), and Figure 1 This is shown in 3(C).

[0060] Furthermore, when the electronic device 101 or the display device 102 is rotated, the region 1 will also be rotated accordingly. The arrangement of 04 and region 106 can be changed. For example, Figure 1(A) can be rotated clockwise. An example of the case when it is rotated to the right is shown in Figure 14(A). Region 104 is near the camera unit 103. They are arranged in a certain direction. Conversely, here is an example of what happens when Figure 1(A) is rotated counterclockwise. This is shown in Figure 14(B). In both Figure 14(A) and Figure 14(B), region 104 is the camera It is positioned near unit 103. This makes it easier to focus on the camera unit 103. However, the embodiments of the present invention are not limited thereto.

[0061] Furthermore, even when taking pictures using the camera unit 103, if the ambient light is strong and bright... In such cases, it is not always necessary to use the display device 102 as lighting. For example, Figure 1 As shown in 5(A), a region 106 may be provided. Alternatively, as shown in Figure 15(B) Alternatively, you could choose not to include region 106, or to set the brightness of region 106 to zero. Alternatively, you could make region 106 as bright as region 104, for example. In other words, even when taking pictures using the camera unit 103, in some cases, Depending on the situation, the display device 102 may be prevented from functioning as a light source. In this case, as shown in Figure 15(C), the entire screen of the display device 102 is used as area 104. You may do so.

[0062] Alternatively, if you try to use the display device 102 as lighting, if its brightness is insufficient... In such cases, a dedicated lighting member 113 is provided separately from the display device 102. This is also possible. Figure 16 shows an example where the lighting member 113 is provided near the camera unit 103. Note that multiple lighting components 113 may be provided. Also, the light-emitting color of each lighting component may be It may be changed. The lighting component 113 is constructed using, for example, an LED.

[0063] When taking a picture using the camera unit 103, the display device 102 will show area 1. Not only 04 and area 106, but also various icons, various images, or various characters, etc. At least one can be displayed. That display is within area 104 or area 106. It is also possible to display it in the side area, or in the area outside of area 104 or area 106. It is also possible to demonstrate this.

[0064] For example, Figure 17 shows an example where various icons and other elements are placed inside area 106. Icon 112A indicates the button to take a picture. In a normal camera, the shutter button... This corresponds to a button. Pressing this button will initiate the photo shoot. Icon 11 2B indicates the flash control button. This controls whether or not to perform a flash. This can be done. Furthermore, by setting the flash control to automatic, the illumination of the subject 105 You can also configure the system to only activate the flash when the brightness is low. (Icon 112C) This indicates the shooting mode button. It indicates whether the image to be captured is a still image or a video. You can choose between the following. Icon 112D indicates the properties button. Various You can control whether or not a window for making settings is displayed.

[0065] As another example, Figure 18 shows an example where text is displayed inside area 106.

[0066] Furthermore, if various icons or other elements are placed inside area 106, that area will be strongly In some cases, it can be determined that no illumination light is being emitted. In such cases, various icons, etc. In the area where it is located, the strong illumination light may cause the display device 102 to burn in or deteriorate. It can be said that such things no longer happen. Or, in normal mode, If various icons are placed, the area where the icons are placed will be illuminated. In this mode, the display device 102 may not emit light. In particular, if the display device 102 is a self-illuminating type display When used as a display device, it can reduce screen burn-in and other issues. If you want to prevent a certain area from emitting light, as shown in Figure 17, icons, etc. In that area, strong light is not emitted, but in areas other than the icon, etc., strong light is emitted to illuminate. A lighting function may be implemented. Alternatively, in lighting mode, as shown in Figure 19, an icon In areas near where objects such as icons are placed, strong illumination will not be performed, and the area near where the icons are placed will be illuminated. In the excluded area, strong light emission may be used to achieve a lighting function.

[0067] Furthermore, another region may be provided outside region 104 and region 106. As an example, Figure 20 shows an example where area 109 is provided. Here, television broadcasting This shows an example of a conversation taking place. Area 109 displays an image of the person on the other end of the call, 110. Area 109 is located near the camera unit 103. When talking while looking at image 110, the camera unit 103 will capture the image where the eyes meet. It is possible.

[0068] Furthermore, various switches and buttons can be provided in the electronic device 101. For example, Figure 16 shows an example where a button 114 for returning to the home screen is placed.

[0069] This embodiment describes an example of the basic principle. Therefore, this embodiment You may freely combine some or all of this with some or all of other embodiments. It can be applied or replaced and implemented.

[0070] (Embodiment 2) This embodiment describes the configuration of an electronic device according to one aspect of the present invention.

[0071] First, Figure 21 shows an example of a rough internal configuration diagram of the electronic device 101.

[0072] CPU201 can perform various calculations and processes. It controls various parts.

[0073] The storage device 203 stores various data, programs, or application software. At least one of the following is stored: For example, the memory device 203 is flashing Memory sticks, magnetic disks, CD-ROMs, DVDs, or magneto-optical disks, etc. This is a storage device capable of processing non-volatile storage media. Application software (programs) having such functions are stored in the storage device 203, and This information may be stored on the storage medium used there.

[0074] The storage device 205 stores various data, programs, or application software. At least one of the following is stored: For example, the storage device 203 is DRAM. These are volatile memory devices. The data or program stored in the memory device 205 Using RAM, the CPU 201 can perform various processes. As shown in Embodiment 1. Application software (programs) having such functions are stored in storage device 203 It may be stored there.

[0075] The controller 207 can control the display device 209. Device 102 corresponds to part or all of the display device 209, or as shown in Figure 1, etc. The display device 102 corresponds to the entirety of the display device 209 and controller 207. Placement 209 contains application software having the functions shown in Embodiment 1. It can display images and user interfaces used in the program.

[0076] External port 211 can communicate with the outside world. For example, a removable device can be connected to it. By connecting the storage medium to the external port 211, various types of storage can be stored on the removable storage medium. It can store at least one piece of data or software (program). Alternatively, by connecting a removable storage device to the external port 211, it can be removed. Various data or software (P It is possible to save at least one of the programs. For example, external port 211 is A storage device composed of semiconductor memory or magnetic memory, or a CD or DVD. It can be connected to any storage medium, however, only those connected to external port 211. Since it is detachable, it is not always connected. Therefore, the embodiment Application software (programs) with the functions described in 1 are external port A device that can be connected to the 211, for example, a removable storage medium, It may still exist.

[0077] The network control unit 213 can control networks such as the Internet. It comes. For example, a wired cable is connected to the network control unit 213, and a LAN is established. Alternatively, the antenna 215 is connected to the network control unit 213, and wireless network A network is established. This allows for the exchange of data and other information. For example, By connecting to external devices via the network control unit 213, various data can be transmitted. To store at least one of the data or software (programs), or electronic device 101 Download at least one of various data or software (programs) It can do things like that. Therefore, an app having the functions shown in Embodiment 1 Download application software (programs) over the network. In some cases, this may be done by running it on the connected device via the network and then sending the result to the power The information may be displayed on the display device 102 of the child device 101.

[0078] The camera unit 217 can take pictures. It can take both still images and videos. Furthermore, by controlling the lens and other components, it is possible to zoom in or reduce the image during shooting. This corresponds to part or all of the camera unit 103 and camera unit 217 shown in Figure 1, etc. .

[0079] In this way, various components are controlled and operate in the electronic device 101. Application software (programs) having the functions shown in the first form of implementation are also It controls the operation of each part of the electronic device 101.

[0080] Next, Figure 3 shows an example of the screen of the display device 102 when the electronic device 101 is started up. The screen displays various icons. Each icon represents a different function. It is compatible with application software that achieves this. For example, Icon 115A is It is camera software and can run camera programs. This software The software (program) can implement the functions shown in Embodiment 1. Therefore, this software (program) is used for the camera unit 103, the display device 102, and the camera. It is possible to control at least one of the following: the camera unit 217, or the display device 209.

[0081] Furthermore, Icon 115B is phone software and runs phone programs. This allows for, for example, video conferencing. This software is an embodiment of It is possible to implement the functions shown in 1. Therefore, this software (prog The RAM includes camera unit 103, display device 102, camera unit 217, display device 209, or It can control at least one of the following: the network control unit 213, etc.

[0082] In addition, various other icons are displayed in each application. For example, SNS (Social Networking Service), email, or WE In services such as Service B, the functions shown in Embodiment 1 can be utilized.

[0083] Such software (programs) are stored in storage device 203 or storage device 205. Where is it stored? Or, such software (programs) are among them. It is stored on a storage medium. Or, such software (program) is stored on an external port. A removable storage medium or device that can communicate via the 211. It is stored in a memory card, for example, as a removable storage device. You can give them things like USB memory sticks.

[0084] Furthermore, such software (programs) are transmitted via the network control unit 213, etc. This can then be downloaded into the electronic device 101. A schematic diagram of this case is shown in Figure 22. As shown, the electronic device 101 is connected to the network 116 by wire or wirelessly. Network 116 has a server 117 that can provide software. The connection is established. Electronic device 101 accesses server 117, To obtain, download, or purchase desired software (programs). Alternatively, it can be rented. Note that the electronic device 101 is connected to network 116. It was not connected, and instead another computer 118 was connected to network 116. In some cases, computer 118 can access server 117, To obtain, download, or purchase the desired software (program) Or, it can be rented. And from computer 118, electronic device 1 To 01, the software (program) is transmitted via a portable storage medium, etc. It can be transferred, etc.

[0085] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0086] (Embodiment 3) This embodiment describes another configuration of an electronic device according to one aspect of the present invention.

[0087] As shown in Figure 23(A), the electronic device 101A is, for example, a display device 102A and a display device Region 106 has, for example, two regions, region 106A and region 106B. It is divided into regions, and is provided in display device 102A and display device 102B respectively. ru.

[0088] In Figure 23(A), the display device 102A and the display device 102B have regions 106A and region Region 106B and other regions are provided, but one aspect of the present invention is not limited thereto. For example, area 106 is provided in only one of the display devices 102A or 102B. It's okay if it's done that way.

[0089] Here, a diagram showing the view from the side is shown in Figure 23(B). Electronic device 101A is an example. It can be folded in the center. It is illuminated from area 106A of the display device 102A. The illumination light 107C and the illumination light 107D irradiated from area 106B of the display device 102B There exists. Here, by bending the electronic device 101A in the center, illumination light 10 The direction from which light 7C and illumination light 107D shines is different. As a result, a shadow is cast on the subject 105. This makes it harder to take clear pictures.

[0090] This embodiment describes an example of the basic principle. Therefore, this embodiment You may freely combine some or all of this with some or all of other embodiments. It can be applied or replaced and implemented.

[0091] (Embodiment 4) This embodiment describes an example of the configuration of a display device according to one aspect of the present invention.

[0092] [Example Configuration] Figure 24(A) is a top view of a display device according to one embodiment of the present invention, and Figure 24(B) is a top view of a display device according to one embodiment of the present invention. This invention describes a pixel circuit that can be used when applying liquid crystal elements to the pixels of a display device in one embodiment. This is a circuit diagram to clarify. Also, Figure 24(C) shows the pixels of a display device according to one embodiment of the present invention. This is a circuit diagram illustrating a pixel circuit that can be used when applying organic EL elements. ru.

[0093] The transistors placed in the pixel area can be arranged in various ways, for example, as described in other embodiments. It can be formed according to the following method. Furthermore, the transistor can be of the n-channel type. Because it is easy, the drive circuit can be constructed using n-channel transistors. A portion of the dynamic circuit is formed on the same substrate as the transistors in the pixel section. In this way, the pixel section and the drive circuit are formed on the same substrate. By using transistors shown in other embodiments in the operating circuit, a highly reliable display device can be created. We can provide this.

[0094] An example of a top view of an active matrix display device is shown in Figure 24(A). On the plate 400 are a pixel section 401, a first scan line drive circuit 402, and a second scan line drive circuit 4 03. It has a signal line driving circuit 404. Multiple signal lines in the pixel section 401 are driven by the signal line driving circuit. Extending from path 404, multiple scan lines are arranged to drive the first scan line drive circuit 402 and the second It is arranged as an extension from the scan line drive circuit 403. Note the intersection region of the scan line and signal line. Each of these has pixels, each having a display element, arranged in a matrix. The board 400 is a connection part for FPC (Flexible Printed Circuit), etc. It is connected to the timing control circuit (also called a controller or control IC) via this.

[0095] Figure 24(A) shows the first scan line drive circuit 402, the second scan line drive circuit 403, and the signal The line drive circuit 404 is formed on the same substrate 400 as the pixel section 401. Therefore, externally Since the number of components such as drive circuits that need to be installed is reduced, costs can be lowered. 400 If an external drive circuit is installed, it becomes necessary to extend the wiring, increasing the number of connections between wires. It is possible to reduce the number of connections between the wiring when the drive circuit is placed on the same circuit board 400. This can lead to improved reliability or increased yield.

[0096] [Liquid crystal display device] Furthermore, an example of the pixel circuit configuration is shown in Figure 24(B). Here, a VA-type liquid crystal display device... This shows a pixel circuit that can be applied to a pixel.

[0097] This pixel circuit can be applied to configurations in which a single pixel has multiple pixel electrode layers. The pixel electrode layer is connected to different transistors, and each transistor is driven by a different gate signal. It is configured to be movable. This allows for the individual images of pixels in a multi-domain design. The signals applied to the elementary electrode layer can be controlled independently.

[0098] The gate wiring 412 of transistor 416 and the gate wiring 413 of transistor 417 These are separated so that different gate signals can be applied. On the other hand, the data line is The source electrode layer or drain electrode layer 414 that functions is connected to the transistor 416. It is commonly used in transistor 417. Transistors 416 and 417 are used in other implementations. A transistor described in the form described can be used as appropriate. This allows for a highly reliable liquid A crystal display device can be provided.

[0099] A first pixel electrode layer electrically connected to transistor 416, and a transistor 417 and an electric The shape of the second pixel electrode layer, which is electrically connected to the first pixel electrode layer, will be described. The shape of the elementary electrode layers is separated by slits. The first pixel electrode layer extends in a V-shape. The second pixel electrode layer has a shape such that it surrounds the outside of the first pixel electrode layer.

[0100] The gate electrode of transistor 416 is connected to gate wiring 412, and transistor 417 The gate electrode is connected to gate wiring 413. Gate wiring 412 and gate wiring 41 By applying different gate signals to 3, the operating timing of transistors 416 and 417 can be determined. By changing the angle, the alignment of the liquid crystals can be controlled.

[0101] Furthermore, the capacitive wiring 410, the gate insulating film which functions as a dielectric, and the first pixel electrode layer Alternatively, a retaining capacitance may be formed by a capacitive electrode electrically connected to a second pixel electrode layer.

[0102] The multi-domain structure comprises a first liquid crystal element 418 and a second liquid crystal element 419 in each pixel. The first liquid crystal element 418 is composed of a first pixel electrode layer, a counter electrode layer, and a liquid crystal layer between them. The second liquid crystal element 419 is composed of a second pixel electrode layer, a counter electrode layer, and a liquid crystal layer between them. It can be done.

[0103] Note that the pixel circuit shown in Figure 24(B) is not limited to this. For example, Figure 24(B) A new switch, resistor, capacitive element, transistor, sensor, or logic circuit is added to the indicated pixel. You may add things like this.

[0104] [Organic EL display device] Another example of a pixel circuit configuration is shown in Figure 24(C). Here, a table using an organic EL element is shown. This shows the pixel structure of the display device.

[0105] Organic EL elements emit electrons from one of a pair of electrodes when a voltage is applied to the light-emitting element. On the other hand, holes are injected from the other side into layers containing luminescent organic compounds, and an electric current flows. Then, through the recombination of electrons and holes, the luminescent organic compound forms an excited state. It emits light when the excited state returns to the ground state. From this mechanism, such emission Optical devices are called current-excited light-emitting devices.

[0106] Figure 24(C) shows an example of an applicable pixel circuit. Here, an n-channel type is shown. An example of using two transistors in one pixel is shown. Note that the metal oxide film according to one aspect of the present invention This can be used in the channel formation region of an n-channel transistor. The pixel circuit can be fitted with digital time-based grayscale driving.

[0107] Applicable pixel circuit configurations and pixel operation when digital time-gradation driving is applied. I will explain.

[0108] Pixel 420 includes a switching transistor 421, a driving transistor 422, and a light emitter. It has element 424 and capacitive element 423. The switching transistor 421 is The source electrode layer is connected to scan line 426, and the first electrode (source electrode layer and drain electrode layer) is connected to scan line 426. The other side is connected to the signal line 425, and the second electrode (the other side of the source electrode layer and drain electrode layer) It is connected to the gate electrode layer of the drive transistor 422. In this configuration, the gate electrode layer is connected to the power line 427 via a capacitive element 423, and the first electrode is connected to the power line It is connected to 427, and the second electrode is connected to the first electrode (pixel electrode) of the light-emitting element 424. The second electrode of the light-emitting element 424 corresponds to the common electrode 428. The common electrode 428 is on the same substrate. It is electrically connected to the common potential line formed above.

[0109] Switching transistor 421 and driving transistor 422 are in other embodiments. The transistors described below can be used as appropriate. This allows for highly reliable organic LEDs. A display device can be provided.

[0110] The potential of the second electrode (common electrode 428) of the light-emitting element 424 is set to a low power supply potential. Note that, The low power supply potential is a potential that satisfies low power supply potential < high power supply potential with reference to the high power supply potential supplied to the power supply line 427 As the low power supply potential, for example, GND, 0V, or the like may be set The high power supply potential and the low power supply potential are set so as to be equal to or higher than the forward threshold voltage of the light-emitting element 424, and the potential difference is applied to the light-emitting element 424, whereby a current is caused to flow through the light-emitting element 424 to cause the light-emitting element 424 to emit light. Note that the forward voltage of the light-emitting element 424 refers to a voltage for obtaining desired luminance, and includes at least the forward threshold voltage The high power supply potential and the low power supply potential are set so as to be equal to or higher than the forward threshold voltage of the light-emitting element 424, and the potential difference is applied to the light-emitting element 424, whereby a current is caused to flow through the light-emitting element 424 to cause the light-emitting element 424 to emit light A current is caused to flow through the light-emitting element 424 to cause the light-emitting element 424 to emit light. Note that the forward voltage of the light-emitting element 424 refers to a voltage for obtaining desired luminance, and includes at least the forward threshold voltage The voltage refers to a voltage for obtaining desired luminance, and includes at least the forward threshold voltage

[0111] Note that the capacitor element 423 can be omitted by using the gate capacitance of the driving transistor 422 as a substitute Regarding the gate capacitance of the driving transistor 422, a capacitance may be formed between the channel formation region and the gate electrode layer A capacitance may be formed between the channel formation region and the gate electrode layer

[0112] Next, signals input to the driving transistor 422 will be described. In the case of a voltage-input voltage driving method, a video signal that brings the driving transistor 422 into two states of being sufficiently turned on or turned off is input to the driving transistor 422 In the case of a voltage-input voltage driving method, a video signal that brings the driving transistor 422 into two states of being sufficiently turned on or turned off is input to the driving transistor 422 A video signal that brings the driving transistor 422 into two states of being sufficiently turned on or turned off is input to the driving transistor 422. Note that in order to operate the driving transistor 422 in a linear region, a voltage higher than the voltage of the power supply line 427 is applied to the gate electrode layer of the driving transistor 422 In order to operate the driving transistor 422 in a linear region, a voltage higher than the voltage of the power supply line 427 is applied to the gate electrode layer of the driving transistor 422 A voltage higher than the voltage of the power supply line 427 is applied to the gate electrode layer of the driving transistor 422. In addition, a voltage equal to or higher than the sum of the power supply line voltage and the threshold voltage Vth of the driving transistor 422 is applied to the signal line 425 A voltage equal to or higher than the sum of the power supply line voltage and the threshold voltage Vth of the driving transistor 422 is applied to the signal line 425

[0113] In the case of performing analog grayscale driving, a voltage equal to or higher than the sum of the forward voltage of the light-emitting element 424 and the threshold voltage Vth of the driving transistor 422 is applied to the gate electrode layer of the driving transistor 422 A voltage equal to or higher than the sum of the forward voltage of the light-emitting element 424 and the threshold voltage Vth of the driving transistor 422 is applied to the gate electrode layer of the driving transistor 422 Apply the signal. Also, input the video signal so that the drive transistor 422 operates in the saturation region. Then, current is passed to the light-emitting element 424. Also, the drive transistor 422 is operated in the saturation region. To achieve this, the potential of the power line 427 is set higher than the gate potential of the drive transistor 422. By converting the video signal to analog, a current corresponding to the video signal is supplied to the light-emitting element 424. Furthermore, it can perform analog grayscale driving.

[0114] Note that the pixel circuit configuration is not limited to the pixel configuration shown in Figure 24(C). For example, Figure 2 A switch, resistor, capacitive element, sensor, transistor or other component may be added to the pixel circuit shown in 4(C). You can add circuits and other components.

[0115] When applying the transistors illustrated in other embodiments to the circuit illustrated in Figure 24, the low power The source electrode (first electrode) is on the high-potential side, and the drain electrode (second electrode) is on the high-potential side. The configuration is designed to be electrically connected. Furthermore, the potential of the first gate electrode is controlled by a control circuit, etc. Furthermore, the second gate electrode is supplied with a potential lower than that supplied to the source electrode by wiring (not shown). The configuration should be such that it can accept the potentials exemplified above.

[0116] For example, in this specification, etc., display element, display device having a display element, light emission Light-emitting devices, which are devices having elements and light-emitting elements, can take various forms or various shapes. It can have such elements.

[0117] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0118] (Embodiment 5) In this embodiment, a display module to which a semiconductor device according to one aspect of the present invention is applied is described below. We will explain using Figure 25.

[0119] The display module 8000 shown in Figure 25 consists of an upper cover 8001 and a lower cover 8002. In between, the touch panel 8004 connected to the FPC8003 and the FPC8005 are connected. Display panel 8006, backlight unit 8007, frame 8009, printed circuit board It has a board 8010 and a battery 8011. It also has a backlight unit 8007 and a battery. Features such as the Terry 8011 and Touch Panel 8004 may not be available.

[0120] A semiconductor device according to one aspect of the present invention can be used, for example, as a display panel 8006.

[0121] The upper cover 8001 and the lower cover 8002 are the touch panel 8004 and the display panel. The shape and dimensions can be appropriately modified to match the size of the 8006.

[0122] The touch panel 8004 is a display panel using either a resistive or capacitive touch panel. It can be used superimposed on 8006. Also, the opposing substrate (sealing substrate) of the display panel 8006 It is also possible to incorporate touch panel functionality into the board. Alternatively, a display panel It is also possible to incorporate an optical sensor within each of the 8006 pixels to create an optical touch panel. Alternatively, an electrode for a touch sensor may be provided within each pixel of the display panel 8006, and a capacitive type touch sensor may be used. A panel is also possible.

[0123] The backlight unit 8007 has a light source 8008. The light source 8008 may be a backlight provided at an end of the backlight unit 8007, and a configuration using a light diffusion plate may also be adopted.

[0124] The frame 8009 has, in addition to the protection function for the display panel 8006, a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed circuit board 8010. Further, the frame has a function as an electromagnetic shield for blocking electromagnetic waves generated by the operation of the printed circuit board 8010. Further, the frame 8009 may also have a function as a heat dissipation plate.

[0125] The printed circuit board 8010 includes a power supply circuit, and a signal processing circuit for outputting a video signal and a clock signal. As the power source that supplies power to the power supply circuit, an external commercial power source may be used, or a separately provided battery 8011 may be used as the power source. The battery 801 signal processing circuit for outputting a video signal and a clock signal. As the power source that supplies power to the power supply circuit, an external commercial power source may be used, or a separately provided battery 8011 may be used as the power source. The battery 801 1 may be omitted when a commercial power source is used. 1 may be omitted when a commercial power source is used.

[0126] Further, members such as a polarizing plate, a retardation plate, and a prism sheet may be additionally provided in the display module 8000. may be additionally provided.

[0127] The present embodiment corresponds to a partial or total modification, addition, correction, deletion, application, generalization, or particularization of other embodiments. Therefore, part or all of the present embodiment can be freely combined with, applied to, or replaced with part or all of other embodiments for implementation. corresponds to a partial or total modification, addition, correction, deletion, application, generalization, or particularization of other embodiments. Therefore, the present embodiment can be freely combined with, applied to, or replaced with part or all of other embodiments for implementation. can be implemented by application or replacement.

[0128] (Embodiment 6) In the present embodiment, a touch panel that can be applied to the electronic device of one embodiment of the present invention The configuration will be explained with reference to Figure 26. Note that this touch panel is foldable. It may be structured in such a way.

[0129] Figure 26(A) illustrates the structure of a touch panel applicable to an electronic device according to one embodiment of the present invention. This is a front view.

[0130] Figure 26(B) is a cross-sectional view along cutting lines AB and CD in Figure 26(A). .

[0131] Figure 26(C) is a cross-sectional view of Figure 26(A) at the cutting line EF.

[0132] <Explanation of the top view> The touch panel 300 illustrated in this embodiment has a display unit 301 (see Figure 26(A)). see).

[0133] The display unit 301 includes multiple pixels 302 and multiple imaging pixels 308. This allows for the detection of fingers or other objects touching the display unit 301. This enables the use of the imaging pixels 308. This allows you to configure a touch sensor.

[0134] Pixel 302 comprises multiple sub-pixels (e.g., sub-pixel 302R), and the sub-pixels are light-emitting elements. It is equipped with a pixel circuit that can supply power to drive the light-emitting elements.

[0135] The pixel circuit can supply selection signals and image signals. The wiring is connected electrically.

[0136] Furthermore, the touch panel 300 is a scan line drive that can supply selection signals to the pixels 302. Circuit 303g(1) and an image signal line drive circuit that can supply an image signal to the pixel 302. It is equipped with road 303s(1).

[0137] The imaging pixel 308 includes a photoelectric conversion element and an imaging pixel circuit that drives the photoelectric conversion element. .

[0138] The imaging pixel circuit has wiring and power supply potential that can supply control signals. It is electrically connected to the wiring that allows it to function.

[0139] One example of a control signal is selecting the imaging pixel circuit that reads out the recorded imaging signal. A signal that can be generated, a signal that can initialize the imaging pixel circuit, and a signal that the imaging pixel circuit can emit light Examples include signals that allow for the determination of the detection time.

[0140] The touch panel 300 can supply control signals to the image pixel 308 as an image pixel drive. It comprises circuit 303g(2) and imaging signal line driving circuit 303s(2) for reading out the imaging signal. .

[0141] <Explanation of the cross-section> The touch panel 300 has a substrate 310 and a counter substrate 370 facing the substrate 310. (See Figure 26(B)).

[0142] The substrate 310 is a flexible substrate 310b, and a barrier is provided to prevent the diffusion of impurities to the light-emitting element. The film 310a and the substrate 310b are bonded together by an adhesive layer 310c. It is a laminated structure.

[0143] The opposing substrate 370 is a flexible substrate 370b, and a barrier prevents the diffusion of impurities to the light-emitting element. The rear film 370a and the substrate 370b are bonded together by the adhesive layer 370c. It is a laminated structure (see Figure 26(B)).

[0144] The sealing material 360 bonds the opposing substrate 370 and the substrate 310 together. It has a refractive index higher than air and also serves as an optical junction layer. Pixel circuits and light-emitting elements (for example) The first light-emitting element (350R) is located between the substrate 310 and the opposing substrate 370.

[0145] Pixel composition Pixel 302 has sub-pixels 302R, 302G, and 302B (Figure 2) See 6(C). In addition, sub-pixel 302R is equipped with light-emitting module 380R, sub-pixel 302 Pixel G is equipped with light-emitting module 380G, and sub-pixel 302B is equipped with light-emitting module 380B. .

[0146] For example, the sub-pixel 302R is powered by the first light-emitting element 350R and the first light-emitting element 350R. The pixel circuit includes a transistor 302t that can supply power (Figure 26(B)). (See reference). Also, the light-emitting module 380R is the first light-emitting element 350R and the optical element (for example) It is equipped with a colored layer (367R).

[0147] The first light-emitting element 350R has a lower electrode 351R, an upper electrode 352, and a lower electrode 351R. The upper electrodes 352 have a layer 353 containing a luminescent organic compound between them (see Figure 26(C)). .

[0148] The layer 353 containing a luminescent organic compound includes luminescent unit 353a and luminescent unit 353b. The system also includes an intermediate layer 354 between the light-emitting unit 353a and the light-emitting unit 353b.

[0149] The light-emitting module 380R has a first colored layer 367R on the opposing substrate 370. It is sufficient if it transmits light of a specific wavelength, for example, red, green, or blue. A material that selectively transmits the light emitted can be used. Alternatively, the light emitted by the light-emitting element can be transmitted You may also include an area that remains transparent.

[0150] For example, the light-emitting module 380R consists of a first light-emitting element 350R and a first colored layer 367R It has a sealing material 360 that is in contact with the surface.

[0151] The first colored layer 367R is located in a position that overlaps with the first light-emitting element 350R. A portion of the light emitted by the light-emitting element 350R of 1 is directed to the sealing material 360, which also serves as an optical bonding layer, and the first The light passes through the colored layer 367R and, as shown by the arrow in the figure, reaches the outside of the light-emitting module 380R. It is launched.

[0152] Although an example using a light-emitting element as the display element is shown here, the present invention is also described in detail below. The embodiments are not limited to these.

[0153] For example, in this specification, etc., display element, display device having a display element, light emission Light-emitting devices, which are devices having elements and light-emitting elements, can take various forms or various shapes. It can have such elements. Examples of display elements, display devices, light-emitting elements, or light-emitting devices include EL (electroluminescent) elements (EL elements including organic and inorganic materials, organic E L elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.) (,), transistor (a transistor that emits light in response to current), electron emission element, liquid crystal element, Electronic ink, electrophoretic elements, grating light bulbs (GLV), plasma displays Tables using PDP (Photographic Display Panel) and MEMS (Micro-Electro-Mechanical Systems) Display element, digital micromirror device (DMD), DMS (Digital Micromirror Device) (Shutter), MIRASOL (registered trademark), IMOD (Interference Modulation) (Distribution) element, shutter-type MEMS display element, optical interference type MEMS display element, Electrowetting elements, piezoelectric ceramic displays, carbon nanotubes, Displays where contrast, brightness, reflectance, transmittance, etc., change due to electromagnetic effects. Some have a medium. An example of a display device using an EL element is an EL display. Examples include field emission devices. A flat-panel display (FED) or SED (Surface-C) display (SED: Surface-C Examples include (onduction electron-emitter display). An example of a display device using liquid crystal elements is a liquid crystal display (transmissive liquid crystal display). I. Semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection Examples include (ejection-type liquid crystal displays). One type of display device that uses electronic ink or electrophoretic elements. Examples include electronic paper. Furthermore, semi-transmissive liquid crystal displays and reflective liquid crystal displays... When implementing a display, some or all of the pixel electrodes are used as reflective electrodes. The goal is to make it capable of doing so. For example, some or all of the pixel electrodes are made of aluminum. It would be good to have silver, etc. Furthermore, in that case, below the reflective electrode, SRAM Any memory circuit can be installed. This further reduces power consumption. It is possible.

[0154] 《Touch Panel Configuration》 The touch panel 300 has a light-shielding layer 367BM on the opposing substrate 370. M is provided so as to surround the colored layer (for example, the first colored layer 367R).

[0155] The touch panel 300 is equipped with an anti-reflective layer 367p in a position that overlaps the display unit 301. For example, a circular polarizing plate can be used as the anti-radiation layer 367p.

[0156] The touch panel 300 includes an insulating film 321. The insulating film 321 is connected to a transistor 302t It covers the pixel circuit. The insulating film 321 is a layer for flattening the irregularities caused by the pixel circuit. It can be used in this way. In addition, it suppresses the diffusion of impurities into transistors such as transistor 302t. An insulating film having layers that can produce this can be applied to the insulating film 321.

[0157] The touch panel 300 has light-emitting elements (for example, a first light-emitting element 350R) on the insulating film 321. To possess.

[0158] The touch panel 300 has a partition wall 328 that overlaps the end of the lower electrode 351R on the insulating film 321. It has (see Figure 26(C)). In addition, the spacing between substrate 310 and opposing substrate 370 is controlled by The peser 329 is located on the bulkhead 328.

[0159] 《Configuration of the image signal line driving circuit》 The image signal line driving circuit 303s(1) includes a transistor 303t and a capacitor 303c. The drive circuit can be formed on the same substrate using the same process as the pixel circuit. Figure 2 As shown in 6(B), transistor 303t has a second gate on insulating film 321. It is also acceptable for the second gate to be electrically connected to the gate of transistor 303t. Furthermore, different potentials may be applied to these. Also, if necessary, a second gate This may be provided on transistor 308t, transistor 302t, etc.

[0160] 《Configuration of imaging pixels》 The imaging pixel 308 is a photoelectric conversion element 308p and light irradiated onto the photoelectric conversion element 308p. It is equipped with an imaging pixel circuit for detecting [something]. The imaging pixel circuit also includes a transistor 308t Includes.

[0161] For example, a pin-type photodiode can be used as the photoelectric conversion element 308p.

[0162] Other configurations The touch panel 300 is equipped with wiring 311 that can supply signals, and terminal 319 is It is provided in wiring 311. Furthermore, it is used to supply signals such as image signals and synchronization signals. The FPC309(1) is electrically connected to terminal 319.

[0163] Note that a printed circuit board (PWB) may be attached to FPC309(1). stomach.

[0164] Transistors formed in the same process are referred to as transistor 302t, transistor 303, and It can be applied to transistors such as the 308t transistor.

[0165] Transistors have structures such as bottom gate type and top gate type. An engine can be applied.

[0166] In addition to the gate, source, and drain of transistors, various components that make up a touch panel are also included. Materials that can be used for wires and electrodes include aluminum, titanium, chromium, and nickel. Kel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten A single metal consisting of n, or an alloy with n as the main component, is used as a single-layer or laminated structure. Yes, for example, a single-layer structure of an aluminum film containing silicon, or an aluminum film on a titanium film. A two-layer structure with stacked layers, a two-layer structure with an aluminum film stacked on a tungsten film, copper-magnesium A two-layer structure in which a copper film is laminated on a nesium-aluminum alloy film, and a copper film is laminated on a titanium film. A two-layer structure, a two-layer structure in which a copper film is laminated on a tungsten film, a titanium film or titanium nitride film Then, an aluminum film or a copper film is laminated on top of the titanium film or titanium nitride film, Furthermore, a three-layer structure is formed by forming a titanium film or titanium nitride film on top of it, or a molybdenum film or nitride film. A molybdenum film and an aluminum film layered on top of the molybdenum film or molybdenum nitride film. Alternatively, a copper film is laminated, and then a molybdenum film or molybdenum nitride film is formed on top of it, creating a three-layer structure. It has a structure, etc. Furthermore, a transparent conductive material containing indium oxide, tin oxide, or zinc oxide is used. This may also be done. Furthermore, using copper containing manganese improves the controllability of the shape through etching. Therefore, it is preferable.

[0167] Transistors such as transistor 302t, transistor 303t, transistor 308t For example, silicon is preferably used as the semiconductor in which the channel is formed. Amorphous silicon may be used as the silicon, but crystalline silicon is particularly preferred. It is preferable to use microcrystalline silicon, polycrystalline silicon, monocrystalline silicon, etc. It is preferable to use [this material]. In particular, polycrystalline silicon can be formed at a lower temperature compared to single-crystal silicon. Furthermore, it offers higher field-effect mobility and greater reliability compared to amorphous silicon. By applying polycrystalline semiconductors like this to pixels, the aperture ratio of the pixels can be improved. Furthermore, even when pixels have extremely high resolution, the gate drive circuit and source drive circuit are separated. This makes it possible to form the components on the same substrate as the base material, reducing the number of components that make up electronic devices. It is possible.

[0168] Here, the pixels provided in each display area of ​​the display device, and the drivers used in each driving circuit For semiconductor devices such as transistors, it is preferable to use oxide semiconductors. In particular, silica It is preferable to use an oxide semiconductor with a larger band gap than silicon. However, if semiconductor materials with a wide band gap and low carrier density are used, the transients This is preferable because it reduces the current when the device is off.

[0169] For example, the above oxide semiconductor may contain at least indium (In) or zinc (Zn). Preferably contains ). More preferably In-M-Zn oxide (where M is Al, Ti, Contains oxides represented by metals such as Ga, Ge, Y, Zr, Sn, La, Ce, or Hf. nothing.

[0170] In particular, the semiconductor layer has multiple crystalline portions, and the c-axis of the crystalline portion is the surface on which the semiconductor layer is formed. , or oriented perpendicular to the upper surface of the semiconductor layer, and without grain boundaries between adjacent crystal portions. It is preferable to use an oxide semiconductor film.

[0171] Such oxide semiconductors do not have grain boundaries, so when the display panel is curved... This suppresses the formation of cracks in the oxide semiconductor film due to stress. Therefore, Such oxide semiconductors are suitable for use in flexible, curved display panels and the like. It is possible to be there.

[0172] By using such materials as semiconductor layers, fluctuations in electrical properties are suppressed, and reliability is improved. High transistors can be achieved.

[0173] Furthermore, its low off-current allows the charge stored in the capacitor via the transistor to be released over a long period of time. It is possible to hold it over time. By applying such transistors to pixels, each It also becomes possible to stop the drive circuit while maintaining the gradation of the image displayed in the display area. As a result, it is possible to create electronic devices with extremely reduced power consumption.

[0174] Furthermore, regarding preferred forms of oxide semiconductors applicable to semiconductor layers and methods for forming them, This will be explained in detail in later embodiments.

[0175] Here, we will describe a method for forming a flexible light-emitting panel.

[0176] For convenience, this definition includes a configuration that includes pixels and driving circuits, or optical components such as color filters. The configuration will be called the element layer. The element layer includes, for example, a display element, and in addition to the display element, a display It includes wiring that electrically connects to the elements, and elements such as transistors used in pixels and circuits. That's good too.

[0177] In this context, the support having an insulating surface on which the element layer is formed is referred to as the substrate. Let's assume that.

[0178] A method for forming an element layer on a substrate having a flexible insulating surface is to directly place the element layer on the substrate. A method for forming a contact element layer, and a method for forming an element layer on a support substrate having a different rigidity from the base material. Another method involves separating the element layer from the support substrate and transferring the element layer onto the substrate.

[0179] If the material constituting the base material has heat resistance to the heat generated during the device layer formation process, Forming the element layer directly on the substrate is preferable because it simplifies the process. When the element layer is formed with the element fixed to the support substrate, transport within and between devices becomes easier. It is preferable because it makes things easier.

[0180] Furthermore, when using a method in which the element layer is formed on a support substrate and then transferred to the substrate, first the support A release layer and an insulating layer are laminated onto a support base, and an element layer is formed on the insulating layer. Subsequently, a support base The material and element layer are separated and transferred to the substrate. At this time, the interface between the support substrate and the peeled layer, and the peeled layer and the insulating layer You should select a material that will cause delamination at the interface of the marginal layer or within the delamination layer.

[0181] For example, a layer containing a high-melting-point metal material such as tungsten as a release layer, and oxidation of the said metal material Layers containing materials are stacked, and multiple layers of silicon nitride or silicon oxynitride are stacked on top of the release layer. It is preferable to use a high melting point metal material. Using a high melting point metal material increases the degree of freedom in the device layer formation process. Therefore, it is desirable.

[0182] Delamination can be achieved by applying mechanical force, etching the delamination layer, or by using the delamination interface. The peeling may also be performed by dropping a liquid onto a portion of the surface and allowing it to penetrate the entire peeling interface. Alternatively, delamination may be performed by applying heat to the delamination interface, taking advantage of the difference in thermal expansion.

[0183] Furthermore, if peeling is possible at the interface between the support substrate and the insulating layer, a peeling layer may not be necessary. For example, using glass as the support substrate and an organic resin such as polyimide as the insulating layer By locally heating a portion of the organic resin using laser light or the like, a starting point for delamination is formed. Alternatively, delamination may be performed at the interface between the glass and the insulating layer. A metal layer is placed between the edge layers, and the metal layer is heated by passing an electric current through it. In this case, delamination may be performed at the interface between the metal layer and the insulating layer. The insulating layer can be used as a substrate.

[0184] Examples of flexible substrates include polyethylene terephthalate (PET) and poly Polyester resins such as ethylene naphthalate (PEN), polyacrylonitrile resin, Liimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethylene Polystyrene sulfone (PES) resin, polyamide resin, cycloolefin resin, polystyrene Examples include resins, polyamide-imide resins, and polyvinyl chloride resins. In particular, the coefficient of thermal expansion is It is preferable to use a material with a low coefficient of thermal expansion, for example, a material with a coefficient of thermal expansion of 30 × 10 -6 / K or less Polyamide-imide resins, polyimide resins, PET, etc., can be suitably used. A substrate (also called a prepreg) in which resin is impregnated into a fibrous material, or an inorganic filler mixed with organic resin. It is also possible to use a substrate with a reduced coefficient of thermal expansion.

[0185] If the above material contains fibrous material, the fibrous material is a high strength organic or inorganic compound. High-strength fibers are used. Specifically, high-strength fibers are fibers with a high tensile modulus or Young's modulus. This refers to polyvinyl alcohol-based fibers, polyester fibers, and poly- Aramid fibers, polyethylene fibers, aramid fibers, poly(p-phenylenebenzobisoxide) Examples include sazole fibers, glass fibers, or carbon fibers. Examples of glass fibers include E-glass. Examples include glass fibers using S glass, D glass, Q glass, etc. These are woven fabrics. Alternatively, it can be used in the form of a nonwoven fabric, and a structure made by impregnating this fiber with resin and hardening the resin is made flexible. It may also be used as a substrate having flexibility. As a substrate having flexibility, it may be made of fibers and resin. Using structures improves reliability against damage caused by bending and localized compression, therefore it is preferable. stomach.

[0186] Furthermore, one embodiment of the present invention is an active matrix display device having active elements in its pixels. A formula or a passive matrix system that does not have active elements in the pixels can be used.

[0187] In the active matrix system, the active elements (active elements, nonlinear elements) are, In addition to transistors, various active elements (active elements, nonlinear elements) can be used. This can be done. For example, MIM (Metal Insulator Metal), or T It is also possible to use elements such as FD (Thin Film Diode). Because it involves fewer manufacturing steps, it is possible to reduce manufacturing costs or improve yield. Alternatively, these elements can improve the aperture ratio due to their small size. This allows for lower power consumption and higher brightness.

[0188] Other than the active matrix method, there are active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements. Because it does not use sub-elements or nonlinear elements, the manufacturing process is simpler, resulting in reduced manufacturing costs or higher yield. This can improve the performance. Alternatively, active elements (active elements, nonlinear elements) can be used. Because it does not exist, the aperture ratio can be improved, leading to lower power consumption or higher brightness. It is possible.

[0189] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0190] (Embodiment 7) In this embodiment, a touch panel that can be applied to an electronic device according to one aspect of the present invention The configuration will be explained with reference to Figure 27. Note that this touch panel is foldable. It may be structured in such a way.

[0191] Figure 27 is a cross-sectional view of the touch panel 500.

[0192] The touch panel 500 includes a display unit 501 and a touch sensor 595. The Nel 500 has substrates 510, 570 and 590. Note that substrate 510, Both substrate 570 and substrate 590 may be flexible.

[0193] The display unit 501 consists of a substrate 510, a plurality of pixels on the substrate 510, and a signal supply to those pixels. It has multiple wirings 511 that can be connected. The multiple wirings 511 are located on the outer periphery of the substrate 510. It is routed all the way to the terminal 519, and a part of it makes up terminal 519. Terminal 519 is FPC509( 1) Connect electrically to it.

[0194] <Touch sensor> The circuit board 590 includes a touch sensor 595 and multiple connections electrically connected to the touch sensor 595. It is equipped with wiring 598. Multiple wirings 598 are routed around the outer periphery of the circuit board 590, and part of them This constitutes a terminal. This terminal is then electrically connected to FPC509(2).

[0195] For example, a capacitive touch sensor can be used as the touch sensor 595. Quantitative methods include surface capacitance and projected capacitance.

[0196] Projected capacitance systems are classified into self-capacitance and mutual-capacitance types, mainly based on differences in their driving methods. There are several advantages. Using a mutual capacitance method is preferable because it enables simultaneous multi-point detection.

[0197] The following section describes the case where a projected capacitive touch sensor is applied.

[0198] Furthermore, various sensors capable of detecting proximity or contact with objects such as fingers are suitable. It can be used.

[0199] The projected capacitive touch sensor 595 has electrodes 591 and 592. 591 is electrically connected to one of the multiple wires 598, and electrode 592 is connected to one of the multiple wires 598 Connect electrically to any of the others.

[0200] The wiring 594 electrically connects the two electrodes 591 that sandwich electrode 592. A shape that minimizes the area of ​​the intersection between pole 592 and wiring 594 is preferable. This reduces the area where electrodes are not provided, thereby reducing unevenness in transmittance. As a result, it is possible to reduce the brightness unevenness of the light transmitted through the touch sensor 595.

[0201] Note that the shapes of electrodes 591 and 592 can take on various forms. For example, multiple electrodes 5 Arrange 91 so that there are as few gaps as possible, and connect electrode 592 and electrode 59 through the insulating layer. It is also possible to configure multiple units spaced apart so that there are areas that do not overlap with unit 1. If a dummy electrode, electrically insulated from the two contacting electrodes 592, is placed between them, This is preferable because it reduces the area of ​​regions with different transmittances.

[0202] The touch sensor 595 includes a substrate 590, electrodes 591 arranged in a staggered pattern on the substrate 590, and electrode 592, electrode 591 and the insulating layer 593 covering electrode 592 and adjacent electrode 591 It is equipped with wiring 594 for electrical connection.

[0203] The adhesive layer 597 is applied to the substrate 590 so that the touch sensor 595 overlaps the display unit 501. It is bonded to board 570.

[0204] Electrodes 591 and 592 are formed using a light-transmitting conductive material. Examples of conductive materials include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide, zinc oxide with added gallium, or graphene are used. It is possible.

[0205] After depositing a translucent conductive material onto the substrate 590 by sputtering, Various patterning techniques, such as trisography, are used to remove unwanted parts, and electrode 59 Electrode 1 and electrode 592 can be formed. Graphene can be produced by CVD, as well as by graphite oxide The material may be formed by applying a solution containing dispersed particles and then reducing it.

[0206] Furthermore, the materials used for the insulating layer 593 include, for example, resins such as acrylic and epoxy. In addition to resins containing siloxane bonds, silicon oxide, silicon oxide nitride, and aluminum oxide are also used. Inorganic insulating materials such as those mentioned above can also be used.

[0207] Furthermore, an opening reaching electrode 591 is provided in the insulating layer 593, and wiring 594 is adjacent to the electrode. 591 is electrically connected. Translucent conductive material increases the aperture ratio of the touch panel. Therefore, it can be suitably used for wiring 594. Also, electrodes 591 and 59 Materials with higher conductivity than 2 can reduce electrical resistance and are therefore suitable for use in wiring 594. can.

[0208] One electrode 592 extends in one direction, and multiple electrodes 592 are arranged in a stripe pattern. .

[0209] Wiring 594 is provided so as to intersect with electrode 592.

[0210] A pair of electrodes 591 are provided flanking one electrode 592, and the wiring 594 is connected to the pair of electrodes 591 They are electrically connected.

[0211] Furthermore, the multiple electrodes 591 do not necessarily need to be arranged in a direction perpendicular to one electrode 592. Alternatively, they may be arranged to form an angle of less than 90 degrees.

[0212] One of the wires 598 is electrically connected to electrode 591 or electrode 592. The part functions as a terminal. Wiring 598 can be, for example, aluminum, gold, platinum, or silver. Nickel, titanium, tungsten, chromium, molybdenum, iron, cobalt, copper, or paraben. Metallic materials such as zinc, or alloy materials containing such metallic materials, can be used.

[0213] Furthermore, an insulating layer is provided to cover the insulating layer 593 and the wiring 594 to protect the touch sensor 595. It is possible.

[0214] Furthermore, the connection layer 599 electrically connects the wiring 598 and the FPC 509(2).

[0215] The connecting layer 599 is an anisotropic conductive film (ACF: Anisotropic Co (Inductive Film) and anisotropic conductive paste (ACP: Anisotropic You can use things like (c) Conductive Paste.

[0216] The adhesive layer 597 is translucent. For example, thermosetting resins or UV-curing resins can be used. This can be done, specifically by having acrylic, urethane, epoxy, or siloxane bonds. Resins such as plastics can be used.

[0217] <Display section> The display unit 501 comprises multiple pixels arranged in a matrix. The pixels are display elements and It includes a pixel circuit that drives the display element.

[0218] In this embodiment, a white organic electroluminescent element is applied as a display element. The following will be explained, but the display elements are not limited to these. Different colored organic electroluminescent elements Electroluminescent elements, for example, a red organic electroluminescent element and a blue organic electroluminescent element You may also use a trollescent element and a green organic electroluminescent element. stomach.

[0219] For example, as display elements, in addition to organic electroluminescent elements, electrophoretic methods and electro Display elements (also called electronic ink) that display information using a powder fluid method, shutter type Various display elements can be used, such as MEMS display elements and optical interference type MEMS display elements. Yes, it is possible. Furthermore, a suitable configuration for the display element to be applied can be selected from various pixel circuits. It is possible.

[0220] The substrate 510 is a flexible substrate 510b, and a barrier is provided to prevent the diffusion of impurities to the light-emitting element. The film 510a and the substrate 510b are bonded together by an adhesive layer 510c. It is a laminated structure.

[0221] The substrate 570 is a flexible substrate 570b, and a barrier is provided to prevent the diffusion of impurities to the light-emitting element. Lamination of the film 570a and the substrate 570b and the adhesive layer 570c that bonds the barrier film 570a. It is the body.

[0222] The sealing material 560 bonds the substrate 570 and the substrate 510 together. The sealing material 560 is more airborne than... It has a high refractive index. Also, when light is extracted to the sealing material 560 side, the sealing material 560 is light It also serves as a junction layer. The pixel circuit and light-emitting element (e.g., the first light-emitting element 550R) are on substrate 5 It is located between 10 and circuit board 570.

[0223] Pixel composition Each pixel includes a sub-pixel 502R, which in turn includes a light-emitting module 580R.

[0224] The sub-pixel 502R supplies power to the first light-emitting element 550R and the first light-emitting element 550R. It includes a pixel circuit containing a transistor 502t that can supply power. It also includes a light-emitting module. The 580R comprises a first light-emitting element 550R and an optical element (e.g., a colored layer 567R). .

[0225] The first light-emitting element 550R has a lower electrode, an upper electrode, and a light-emitting element between the lower electrode and the upper electrode. It has a layer containing organic compounds.

[0226] The light-emitting module 580R has a first colored layer 567R in the direction from which light is extracted. The layer only needs to transmit light of a specific wavelength, such as red, green, or blue. A material that selectively transmits light exhibiting this characteristic can be used. Furthermore, in other sub-pixels, A region that allows the light emitted by the light-emitting element to pass through directly may be provided.

[0227] Furthermore, if the sealing material 560 is provided on the side from which light is extracted, the sealing material 560 is the first The light-emitting element 550R is in contact with the first colored layer 567R.

[0228] The first colored layer 567R is located in a position that overlaps with the first light-emitting element 550R. A portion of the light emitted by the light-emitting element 550R of 1 passes through the first colored layer 567R, as shown in the figure. The light is emitted to the outside of the 580R light-emitting module in the direction of the arrow.

[0229] 《Display Unit Configuration》 The display unit 501 has a light-shielding layer 567BM in the direction from which light is emitted. It is provided so as to surround the colored layer (for example, the first colored layer 567R).

[0230] The display unit 501 is provided with an anti-reflective layer 567p in a position that overlaps the pixels. For p, for example, a circular polarizer can be used.

[0231] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Furthermore, the insulating film 521 is used as a layer to flatten the irregularities caused by the pixel circuit. Furthermore, a laminated film containing a layer that can suppress the diffusion of impurities can be suitable for the insulating film 521. It can be used. This improves the reliability of transistors such as the 502t due to impurity diffusion. This can suppress the decline.

[0232] The display unit 501 has a light-emitting element (for example, a first light-emitting element 550R) on the insulating film 521. ru.

[0233] The display unit 501 has a partition wall 528 on the insulating film 521 that overlaps the end of the first lower electrode. Furthermore, a spacer is provided on the partition wall 528 to control the distance between substrate 510 and substrate 570.

[0234] 《Configuration of the scan line drive circuit》 The scan line driver circuit 503g(1) includes a transistor 503t and a capacitor 503c. Furthermore, the drive circuit can be formed on the same substrate using the same process as the pixel circuit.

[0235] Other configurations The display unit 501 is equipped with wiring 511 that can supply signals, and terminal 519 is connected to wiring 5 It is located at 11. It can also supply signals such as image signals and synchronization signals. FPC509(1) is electrically connected to terminal 519.

[0236] Note that a printed circuit board (PWB) may be attached to FPC509(1). stomach.

[0237] <Example of display unit modification 1> Various transistors can be applied to the display unit 501.

[0238] Figure 27(A) shows the configuration when a bottom-gate transistor is applied to the display unit 501. This is illustrated in Figure 27(B).

[0239] For example, a semiconductor layer containing oxide semiconductors, amorphous silicon, etc. is shown in Figure 27(A). This can be applied to the transistors 502t and 503t shown.

[0240] For example, a semiconductor layer containing polycrystalline silicon, etc., is used in the transistor 5 shown in Figure 27(B). It can be applied to the 02t and transistor 503t.

[0241] Figure 27(C) shows the configuration when a top-gate type transistor is applied to the display unit 501. This is illustrated in the diagram.

[0242] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film, as shown in Figure 2. This applies to transistors 502t and 503t shown in 7(C). can.

[0243] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0244] (Embodiment 8) In this embodiment, a touch panel that can be applied to an electronic device according to one aspect of the present invention The configuration will be explained with reference to Figure 28. Note that this touch panel is foldable. It may be structured in such a way.

[0245] Figure 28 is a cross-sectional view of the touch panel 500B.

[0246] The touch panel 500B described in this embodiment processes the supplied image information into transistors The display unit 501 is provided on the side where the display unit is located, and the touch sensor is located at the base of the display unit. The fact that it is located on the board 510 side is different from the touch panel 500 described in Embodiment 7. Here, we will explain in detail the different configurations and the parts where similar configurations can be used. The above explanation is used as a reference.

[0247] <Display section> The display unit 501 comprises multiple pixels arranged in a matrix. The pixels are display elements and It includes a pixel circuit that drives the display element.

[0248] Pixel composition Each pixel includes a sub-pixel 502R, which in turn includes a light-emitting module 580R.

[0249] The sub-pixel 502R supplies power to the first light-emitting element 550R and the first light-emitting element 550R. It includes a pixel circuit that contains a transistor 502t that can supply power.

[0250] The light-emitting module 580R consists of a first light-emitting element 550R and an optical element (e.g., a colored layer 56) It is equipped with 7R.

[0251] The light-emitting element 550R consists of a lower electrode, an upper electrode, and a light-emitting organic material between the lower electrode and the upper electrode. It has a layer containing a compound.

[0252] The light-emitting module 580R has a first colored layer 567R in the direction from which light is extracted. The layer only needs to transmit light of a specific wavelength, such as red, green, or blue. A material that selectively transmits light exhibiting this characteristic can be used. Furthermore, in other sub-pixels, A region that allows the light emitted by the light-emitting element to pass through directly may be provided.

[0253] The first colored layer 567R is located in a position that overlaps with the first light-emitting element 550R. Also, Figure 28( The first light-emitting element 550R shown in A) emits light on the side where the transistor 502t is located. It is emitted. As a result, some of the light emitted by the light-emitting element 550R passes through the first colored layer 567R. The light is then emitted outside the light-emitting module 580R in the direction of the arrow shown in the diagram.

[0254] 《Display Unit Configuration》 The display unit 501 has a light-shielding layer 567BM in the direction from which light is emitted. It is provided so as to surround the colored layer (for example, the first colored layer 567R).

[0255] The display unit 501 includes an insulating film 521. The insulating film 521 covers the transistor 502t. Furthermore, the insulating film 521 is used as a layer to flatten the irregularities caused by the pixel circuit. Furthermore, a laminated film containing a layer that can suppress the diffusion of impurities can be suitable for the insulating film 521. This can be used to prevent, for example, interference caused by impurities diffusing from the colored layer 567R. This can suppress the decline in reliability of devices such as the 502t.

[0256] <Touch sensor> The touch sensor 595 is located on the circuit board 510 side of the display unit 501 (Figure 28(A)). reference).

[0257] The adhesive layer 597 is located between the substrate 510 and the substrate 590, and connects the display unit 501 and the touch sensor 5 Glue together 95.

[0258] <Example of display unit modification 1> Various transistors can be applied to the display unit 501.

[0259] Figure 28(A) shows the configuration when a bottom-gate type transistor is applied to the display unit 501. This is illustrated in Figure 28(B).

[0260] For example, a semiconductor layer containing oxide semiconductors, amorphous silicon, etc. is shown in Figure 28(A). This can be applied to the transistors 502t and 503t shown.

[0261] For example, a semiconductor layer containing polycrystalline silicon, etc., is used in the transistor 5 shown in Figure 28(B). It can be applied to the 02t and transistor 503t.

[0262] Figure 28(C) shows the configuration when a top-gate type transistor is applied to the display unit 501. This is illustrated in the diagram.

[0263] For example, a semiconductor layer including polycrystalline silicon or a transferred single-crystal silicon film, as shown in Figure 2. This applies to transistors 502t and 503t shown in 8(C). can.

[0264] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0265] (Embodiment 9) In this embodiment, the semiconductor layer of a semiconductor device applicable to a display panel according to one aspect of the present invention is A suitable oxide semiconductor for use will be described.

[0266] Oxide semiconductors have a large energy gap of 3.0 eV or more, making oxide semiconductors suitable for An oxide semiconductor film obtained by processing under certain conditions and sufficiently reducing its carrier density is applied. In a transistor, the leakage current between the source and drain in the off state (off current) This can be made extremely low compared to conventional silicon-based transistors. .

[0267] Applicable oxide semiconductors include at least indium (In) or zinc (Zn). It is preferable that the oxide semiconductor contains ) and is particularly preferable that it contains In and Zn. As stabilizers to reduce variations in the electrical characteristics of transistors using these, In addition, gallium (Ga), tin (Sn), hafnium (Hf), and zirconium (Zr) Titanium (Ti), scandium (Sc), yttrium (Y), lanthanides (for example) One of the following is selected from cerium (Ce), neodymium (Nd), and gadolinium (Gd). It is preferable that multiple species are included.

[0268] For example, oxide semiconductors include indium oxide, tin oxide, zinc oxide, and in-Zn-based acids. compounds, Sn-Zn oxides, Al-Zn oxides, Zn-Mg oxides, Sn-Mg acids In-Mg oxides, In-Ga oxides, In-Ga-Zn oxides (IGZO (Also written as), In-Al-Zn oxide, In-Sn-Zn oxide, Sn-Ga- Zn oxides, Al-Ga-Zn oxides, Sn-Al-Zn oxides, In-Hf-Z n-based oxides, In-Zr-Zn oxides, In-Ti-Zn oxides, In-Sc-Zn oxides In-Y-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides In-Pr-Zn oxides, In-Nd-Zn oxides, In-Sm-Zn oxides Materials, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides In-Dy-Zn oxides, In-Ho-Zn oxides, In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn ​​oxides, I n-Sn-Ga-Zn oxides, In-Hf-Ga-Zn oxides, In-Al-Ga- Zn oxides, In-Sn-Al-Zn oxides, In-Sn-Hf-Zn oxides, I n-Hf-Al-Zn oxides can be used.

[0269] Here, an In-Ga-Zn oxide is an oxide having In, Ga, and Zn as its main components. It refers to the material itself, and the ratio of In, Ga, and Zn is irrelevant. Also, other than In, Ga, and Zn... It may contain metallic elements.

[0270] In addition, as an oxide semiconductor, InMO3(ZnO) m (m>0, and m is not an integer) Materials represented by ) may also be used. Note that M is selected from Ga, Fe, Mn, and Co. This refers to one or more metallic elements, or the elements used as stabilizers as described above. Also, as an oxide semiconductor, In2SnO5(ZnO) n (n > 0, and n is an integer) You may use the materials indicated as follows.

[0271] For example, In:Ga:Zn=1:1:1, In:Ga:Zn=1:3:2, In:Ga :Zn=1:3:4, In:Ga:Zn=1:3:6, In:Ga:Zn=3:1:2A or In-Ga-Zn oxides with an atomic ratio of In:Ga:Zn=2:1:3 and their composition It is preferable to use an oxide from the vicinity of [the specified location].

[0272] When an oxide semiconductor film contains a large amount of hydrogen, it combines with the oxide semiconductor, causing water to form. Some of the elements become donors, generating electrons, which are carriers. This causes the transistor The threshold voltage of the film shifts in the negative direction. Therefore, the formation of oxide semiconductor films is affected. Subsequently, a dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or water from the oxide semiconductor film. It is preferable to remove impurities and purify the material to a high degree to minimize its content.

[0273] Furthermore, by dehydrating (dehydrogenating) the oxide semiconductor film, Oxygen levels may also decrease at the same time. As mentioned above, after the formation of an oxide semiconductor film, Then, a dehydration treatment (dehydrogenation treatment) is performed to remove hydrogen or water from the oxide semiconductor film. The material is purified to the highest possible purity, minimizing the presence of impurities, and then increased through dehydration (dehydrogenation) treatment. It is preferable to perform a process to add oxygen to the oxide semiconductor film in order to compensate for the resulting oxygen deficiency. Furthermore, in this specification and elsewhere, the process of supplying oxygen to an oxide semiconductor film is referred to as oxygenation treatment. In some cases, or in some cases, the amount of oxygen contained in the oxide semiconductor film exceeds the stoichiometric composition. This process is sometimes referred to as peroxygenation treatment.

[0274] Thus, oxide semiconductor films undergo dehydration treatment (dehydrogenation treatment) to remove hydrogen or water. The oxygen deficiency is removed and compensated for by oxygenation treatment, resulting in type i (true) and This can be an oxide semiconductor film that is very close to type i and is essentially type i (intrinsic). Furthermore, "substantially true" means that there are very few donor-derived carriers in the oxide semiconductor film. (Close to zero), carrier density is 1 × 10⁻⁶ 17 / cm 3 Below, 1 x 10 16 / cm 3or less , 1×10 15 / cm 3 or less, 1×10 14 / cm 3 or less, 1×10 13 / cm 3 or less, particularly preferably 8×10 11 / cm 3 less than, further preferably 1×10 11 / cm 3 less than , further preferably 1×10 10 / cm 3 less than, and 1×10 -9 / cm 3 or more means.

[0275] Further, in this manner, a transistor including an i-type or substantially i-type oxide semiconductor film can achieve extremely excellent off-state current characteristics. For example, a transistor using an oxide semiconductor film The drain current when the transistor is in an off state can be set to 1×10 at room temperature (about 25°C) -18 A or less, preferably 1×10 -21 A or less, further preferably 1×10 -24 A or less, or at 85 °C, 1×10 -15 A or less, preferably 1×10 -18 A or less, further preferably 1× 10 -21 A or less. Note that the off state of a transistor refers to, in the case of an n-channel type transistor, a state where the gate voltage is sufficiently lower than the threshold voltage. Specifically , when the gate voltage is lower than the threshold voltage by 1 V or more, 2 V or more, or 3 V or more , the transistor is turned off. Note that these current values are for the case where the voltage between the source and the drain is, for example, 1 V, 5 V, or 10 V .

[0276] The structure of oxide semiconductor films will be described below.

[0277] Oxide semiconductor films are broadly classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. Non-single-crystal oxide semiconductor films are CAAC-OS (C Axis Aligned Crystal Sturtine Oxide Semiconductor film, polycrystalline oxide semiconductor This refers to films, microcrystalline oxide semiconductor films, amorphous oxide semiconductor films, etc.

[0278] First, let's explain the CAAC-OS film. Note that CAAC-OS is referred to as CANC(C This is called an oxide semiconductor having (-axis aligned nanocrystals). It is also possible.

[0279] CAAC-OS film is an oxide semiconductor film having multiple c-axis oriented crystalline regions. .

[0280] CAAC-OS film is examined using a transmission electron microscope (TEM). When observed with a tron ​​microscope, a clear boundary between crystalline regions is observed, i.e. The grain boundaries (also called crystal grain boundaries) cannot be identified. Therefore, C AAC-OS films are less susceptible to the decrease in electron mobility caused by grain boundaries.

[0281] The CAAC-OS film was observed by TEM from a direction roughly parallel to the sample surface (cross-sectional TEM view). (Inference) It can be confirmed that in the crystalline part, metal atoms are arranged in layers. Each of these layers has a concave surface on the surface (also called the surface to be formed) or upper surface that forms the CAAC-OS film. The shape reflects a convexity and is arranged parallel to the surface or top surface of the CAAC-OS film to be formed.

[0282] On the other hand, the CAAC-OS film was observed by TEM from a direction roughly perpendicular to the sample surface (plane T). EM observation reveals that in the crystalline region, metal atoms are arranged in a triangular or hexagonal shape. This can be confirmed. However, no regularity is observed in the arrangement of metal atoms between different crystalline regions. do not have.

[0283] Figure 29(a) is a cross-sectional TEM image of the CAAC-OS film. Figure 29(b) is a cross-sectional image of the CAAC-OS film. This is a further enlarged cross-sectional TEM image of 29(a), with the atomic arrangement exaggerated for easier understanding. The key signature is indicated.

[0284] Figure 29(c) shows the area circled between AO and A' in Figure 29(a), with a diameter of approximately 4 This is a local Fourier transform image of nm. From Figure 29(c), c-axis orientation is observed in each region. This can be confirmed. Also, since the orientation of the c-axis is different between A and O and between O and A', different G This suggests it is rain. Also, between A and O, the c-axis angles are 14.3° and 16°. It can be seen that it changes gradually and continuously, such as 6° and 26.4°. Similarly, OA In between, the angle of the c-axis is -18.3°, -17.6°, and -15.9° in a gradual, continuous manner. It is clear that things are changing.

[0285] Furthermore, when electron diffraction is performed on the CAAC-OS film, oriented spots (bright spots) appear. Observed. For example, on the upper surface of the CAAC-OS film, for example, between 1 nm and 30 nm. When electron diffraction using an electron beam (also called nanobeam electron diffraction) is performed, a spot is observed. (See Figure 30(A).)

[0286] Cross-sectional TEM observation and planar TEM observation revealed that the crystalline portion of the CAAC-OS film exhibits orientation. It can be seen that this is happening.

[0287] Furthermore, most of the crystalline parts contained in the CAAC-OS film are cubes with sides less than 100 nm long. It is small enough to fit inside the body. Therefore, the crystalline portion contained in the CAAC-OS membrane has sides of 10. This also includes cases where the size is less than nm, less than 5 nm, or less than 3 nm and fits within a cube. Furthermore, multiple crystalline regions contained in the CAAC-OS film connect to form one large crystalline region. A region may be formed. For example, in a planar TEM image, at 2500 nm 2 Above 5μm 2 or greater than 1000 μm 2 In some cases, crystal regions exceeding the above size may be observed.

[0288] X-ray diffraction (XRD) of CAAC-OS film When structural analysis is performed using the instrument, for example, CAAC-OS having InGaZnO4 crystals is found. Out-of-plane analysis of the film showed a peak at a diffraction angle (2θ) of around 31°. This peak may appear. This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the crystals of the CAAC-OS film have c-axis orientation, and the c-axis is on the surface to be formed or on the upper surface. It can be confirmed that it is oriented in a roughly vertical direction.

[0289] On the other hand, in the CAAC-OS film, X-rays are incident from a direction approximately perpendicular to the c-axis in an in-p In analysis using the lane method, a peak may appear when 2θ is around 56°. This is attributed to the (110) plane of the InGaZnO4 crystal. For a crystalline semiconductor film, fix 2θ to approximately 56° and use the normal vector of the sample surface as the axis (φ axis). When the analysis (φ scan) is performed while rotating the sample, a crystal plane equivalent to the (110) plane is found. Six peaks attributable to this are observed. In contrast, in the case of the CAAC-OS film, 2θ Even when fixed at approximately 56° and scanned using the φ scan function, no clear peak appears.

[0290] From the above, it can be concluded that in CAAC-OS films, the orientation of the a-axis and b-axis between different crystalline regions is Although irregular, it has c-axis orientation, and the c-axis is parallel to the normal vector of the formed surface or the upper surface. It can be seen that it is oriented in a specific direction. Therefore, the layered structure confirmed by the aforementioned cross-sectional TEM observation is Each layer of arranged metal atoms is a plane parallel to the ab-plane of the crystal.

[0291] Furthermore, the crystalline portion is formed when the CAAC-OS film is deposited, or during crystallization treatments such as heat treatment. It is formed when the process is carried out. As mentioned above, the c-axis of the crystal is aligned with the surface on which the CAAC-OS film is formed. Or it is oriented in a direction parallel to the normal vector of the upper surface. Therefore, for example, the CAAC-OS film When the shape is altered by etching or other means, the c-axis of the crystal becomes the target area for CAAC-OS film formation. The normal vector may not be parallel to the normal vector of the face or top surface.

[0292] Furthermore, the distribution of c-axis oriented crystalline regions in the CAAC-OS film does not need to be uniform. For example, the crystalline portion of the CAAC-OS film may be formed by crystal growth from near the top surface of the CAAC-OS film. When formed in this manner, the region near the top surface will have a more c-axis-oriented crystal structure than the region near the surface being formed. The proportion of impurities can increase. Also, CAAC-OS films with added impurities The region to which the substance is added is altered, and regions with a different proportion of partially c-axis-oriented crystals are formed. Sometimes that happens.

[0293] Furthermore, the out-of-plane CAAC-OS film having InGaZnO4 crystals Analysis using this method revealed that in addition to the peak near 2θ = 31°, there is also a peak near 2θ = 36°. In some cases, this may occur. Peaks near 2θ of 36° indicate c-axis orientation in a portion of the CAAC-OS film. This indicates the presence of crystals that do not possess properties. The CAAC-OS film has a 2θ of approximately 31°. It is preferable that a peak is shown and that no peak is shown near 36° for 2θ.

[0294] CAAC-OS films are oxide semiconductor films with low impurity concentrations. The impurities include hydrogen and carbon. These are elements other than the main components of oxide semiconductor films, such as silicon and transition metal elements. In particular, silicon Elements such as condensate, which have a stronger bonding force with oxygen than the metal elements that make up oxide semiconductor films, are acidic. By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disrupted, reducing its crystallinity. This is a contributing factor. Also, heavy metals such as iron and nickel, argon, and carbon dioxide have a high atomic ratio. Because of its large diameter (or molecular radius), when it is contained within an oxide semiconductor film, the oxide semiconductor film This disrupts the atomic arrangement and reduces crystallinity. Pure substances can act as carrier traps or carrier sources.

[0295] Furthermore, CAAC-OS films are oxide semiconductor films with a low defect level density. For example, oxide Oxygen vacancies in semiconductor films can act as carrier traps or capture hydrogen. This can sometimes become a source of carrier transmission.

[0296] A low impurity concentration and low defect level density (few oxygen vacancies) is referred to as high-purity intrinsic or This is essentially called high-purity intrinsic. Oxide semiconductors that are high-purity intrinsic or substantially high-purity intrinsic. Because the membrane has fewer carrier sources, the carrier density can be lowered. Therefore, A transistor using this oxide semiconductor film exhibits electrical characteristics such as a negative threshold voltage ( - Also called Marieion.) It rarely becomes high purity genuine or substantially high purity. Intrinsic oxide semiconductor films have few carrier traps. Therefore, the oxide semiconductor... Transistors using film have small variations in electrical characteristics and are highly reliable. Furthermore, the charge trapped in the carrier trap of the oxide semiconductor film requires time to be released. It can last for a long time and behave as if it were a fixed charge. Therefore, when the impurity concentration is high... Furthermore, transistors using oxide semiconductor films with a high defect level density exhibit unstable electrical properties. There are cases where this occurs.

[0297] Furthermore, transistors using CAAC-OS films exhibit electrical properties when irradiated with visible light or ultraviolet light. Sexual variation is small.

[0298] Next, we will explain microcrystalline oxide semiconductor films.

[0299] Microcrystalline oxide semiconductor films can be clearly observed using TEM. In some cases, this may not be possible. The crystalline portion contained in the microcrystalline oxide semiconductor film is between 1 nm and 100 nm. They are often smaller than 1 nm, or between 1 nm and 10 nm in size. In particular, between 1 nm and 10 nm Nanocrystals (nc: nanocrystals) are microcrystals of a size of 1 nm or less, or between 1 nm and 3 nm. An oxide semiconductor film having tal is made nc-OS (nanocrystalline O It is called an xide Semiconductor film. Also, an nc-OS film is, for example, T In EM observations, grain boundaries may not be clearly visible. , an oxidation having RANC (Random Aligned nanocrystals) Material semiconductors, or NANCs (Non-Aligned nanocrystals) It can also be called an oxide semiconductor.

[0300] nc-OS films are used in minute regions (for example, regions between 1 nm and 10 nm, especially regions between 1 nm and 10 nm). The atomic arrangement has periodicity in the region of 3 nm or less. In addition, the nc-OS film is different There is no regularity in the crystal orientation between the crystalline regions. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, nc-OS films may be indistinguishable from amorphous oxide semiconductor films. There are cases where this occurs. For example, XRD using X-rays with a diameter larger than that of the crystalline region on an nc-OS film. When structural analysis is performed using the apparatus, the out-of-plane method analyzes the crystal planes. The indicated peak is not detected. Also, the probe diameter is larger than that of the crystalline region in the nc-OS film. Electron diffraction (also called limited-field electron diffraction) is performed using an electron beam (for example, 50 nm or longer). Then, a diffraction pattern resembling a halo pattern is observed. On the other hand, for nc-OS films, Nanobeam electron diffractometers use electron beams with a probe diameter close to or smaller than the size of the crystal. When this is performed, a spot is observed. Furthermore, nanobeam electron diffraction is performed on the nc-OS film. In some cases, a region of high brightness may be observed in a circular (ring-shaped) pattern. Also, n When nanobeam electron diffraction is performed on a c-OS film, multiple spots are observed within a ring-shaped region. It may be measured (see Figure 30(B)).

[0301] nc-OS films are oxide semiconductor films with higher orderliness than amorphous oxide semiconductor films. Therefore, nc-OS films have a lower defect level density than amorphous oxide semiconductor films. However, Furthermore, the nc-OS film shows no regularity in crystal orientation between different crystalline regions. Therefore, nc- OS films have a higher defect level density compared to CAAC-OS films.

[0302] Note that oxide semiconductor films include, for example, amorphous oxide semiconductor films, microcrystalline oxide semiconductor films, and C The AAC-OS film may be a multilayer film having two or more types.

[0303] When an oxide semiconductor film has multiple structures, the structural solution can be obtained using nanobeam electron diffraction. Analysis may be possible in some cases.

[0304] Figure 30(C) shows the electron gun chamber 10, the optical system 12 below the electron gun chamber 10, and below the optical system 12. The sample chamber 14, the optical system 16 below the sample chamber 14, the observation chamber 20 below the optical system 16, and observation A camera 18 installed in room 20 and a film room 22 below the observation room 20 are included in the transmission electric field. This shows the particle diffraction measurement device. Camera 18 is installed facing the inside of the observation room 20. It is not necessary to have a room 22.

[0305] Furthermore, Figure 30(D) shows the internal structure of the transmission electron diffraction measuring device shown in Figure 30(C). Inside the transmission electron diffraction measuring device, electrons emitted from the electron gun installed in the electron gun chamber 10 However, it is irradiated onto the substance 28 placed in the sample chamber 14 via the optical system 12. The resulting electrons are incident on a fluorescent screen 32 installed inside the observation room 20 via the optical system 16. On the light plate 32, a pattern appears corresponding to the intensity of the incident electrons, forming a transmitted electron diffraction pattern. It can measure n.

[0306] Camera 18 is positioned facing the fluorescent board 32 and captures the patterns that appear on the fluorescent board 32. It is possible to cast a shadow. A straight line passing through the center of the lens of camera 18 and the center of the fluorescent screen 32. The angle between the line and the top surface of the fluorescent board 32 is, for example, between 15° and 80°, or between 30° and above. The angle should be 75° or less, or between 45° and 70°. The smaller the angle, the more likely it is that the camera 18 will capture the image. The transmitted electron diffraction pattern that is shadowed will be greatly distorted. However, if the angle is known in advance... If so, it is also possible to correct the distortion of the obtained transmission electron diffraction pattern. In some cases, camera 18 may be placed in the film chamber 22. It may also be installed in the room chamber 22 so as to be opposite to the direction of incidence of electrons 24. In this case, a fluorescent screen A low-distortion transmission electron diffraction pattern can be captured from the back surface of the 32-lens microscope.

[0307] A holder for fixing the sample substance 28 is installed in the sample chamber 14. The holder has a structure that allows electrons to pass through material 28. The holder is, for example, a material The holder may have a function to move quality 28 along the X, Y, and Z axes. For example, 1nm to 10nm, 5nm to 50nm, 10nm to 100nm Move within ranges such as m or less, 50 nm to 500 nm, and 100 nm to 1 μm. It is sufficient to have a certain level of precision. These ranges should be determined by setting the optimal range based on the structure of material 28. Yes.

[0308] Next, the transmission electron diffraction pattern of the material is measured using the transmission electron diffraction measuring device described above. I will explain how to do it.

[0309] For example, as shown in Figure 30(D), the irradiation position of electrons 24, which are a nanobeam, in a material. By changing (scanning) the material, we can observe how the structure of the material changes. Yes, it is possible. In this case, if substance 28 is a CAAC-OS film, then as shown in Figure 30(A) A diffraction pattern is observed. Alternatively, if material 28 is an nc-OS film, then Figure 30(B) shows The diffraction pattern shown is observed.

[0310] By the way, even if substance 28 is a CAAC-OS film, it may be partially an nc-OS film, etc. Similar diffraction patterns may be observed. Therefore, the quality of the CAAC-OS film is , the percentage of the region in which the diffraction pattern of the CAAC-OS film is observed within a certain range (CAA It can sometimes be expressed as (also called the carbonization rate). For example, with a good quality CAAC-OS film If present, the CAAC conversion rate should be 50% or more, preferably 80% or more, and more preferably 90%. More preferably, the diffraction pattern is 95% or higher. The proportion of the region where this phenomenon is observed is denoted as the non-CAAC rate.

[0311] For example, immediately after film deposition (denoted as-sputtered), or in an oxygen-containing atmosphere. On the upper surface of each sample having a CAAC-OS film after heat treatment at 450°C in the air, a scan was performed. A transmission electron diffraction pattern was acquired while scanning. Here, scanning was performed at a speed of 5 nm / second for 60 seconds. The diffraction pattern is observed while scanning, and the observed diffraction pattern is captured as a still image every 0.5 seconds. The CAAC conversion rate was derived by converting to [a specific format]. Note that the electron beam used had a probe diameter of 1n. A nanobeam of m was used. Similar measurements were performed on six samples. Then, CAAC conversion was performed. The mean value across six samples was used to calculate the rate.

[0312] The CAAC conversion rate for each sample is shown in Figure 31(A). The CAAC-OS film immediately after deposition is C The AAC conversion rate was 75.7% (the non-CAAC conversion rate was 24.3%). Furthermore, heating at 450°C was performed. The CAAC conversion rate of the CAAC-OS film after treatment was 85.3% (the non-CAAC conversion rate was 14.7%). The results showed that the CAAC conversion rate was higher after the 450°C heat treatment compared to immediately after film formation. In other words, heat treatment at high temperatures (e.g., 400°C or higher) results in a lower non-CAAC conversion rate. It can be seen that the CAAC conversion rate increases. Also, when heat treatment is performed below 500°C, It can be seen that a CAAC-OS film with a high CAAC conversion rate can be obtained.

[0313] Here, most of the diffraction patterns that differ from those of the CAAC-OS film are similar to those of the nc-OS film. It was a folded pattern. Furthermore, the amorphous oxide semiconductor film could not be confirmed in the measurement area. It was not possible. Therefore, by heat treatment, a region having a structure similar to that of the nc-OS film was created. However, it is suggested that the structure of adjacent regions influences rearrangement and CAAC formation. .

[0314] Figures 31(B) and 31(C) show CAAC- immediately after film deposition and after heat treatment at 450°C. This is a planar TEM image of the OS film. By comparing Figure 31(B) and Figure 31(C), 4 The CAAC-OS film after heat treatment at 50°C shows that the film quality is more homogeneous. It can be seen that the film quality of the CAAC-OS film is improved by heat treatment at high temperatures.

[0315] Using this measurement method, it is possible to analyze the structure of oxide semiconductor films that have multiple structures. This can sometimes happen.

[0316] CAAC-OS films can be formed, for example, by the following method.

[0317] CAAC-OS films are, for example, polycrystalline oxide semiconductor sputtering targets. The film is deposited using a sputtering method.

[0318] By increasing the substrate temperature during film deposition, the migration of sputtering particles after reaching the substrate is reduced. This occurs. Specifically, the substrate temperature is between 100°C and 740°C, preferably between 200°C and 740°C. The film is deposited at a temperature of 500°C or lower. By increasing the substrate temperature during film deposition, sputtering particles are formed. When the sputtering particles reach the substrate, migration occurs on the substrate, and the sputtering particles become flat. The surface adheres to the substrate. At this time, the sputtering particles become positively charged, causing sputtering. Because the ring particles repel each other while adhering to the substrate, the sputtering particles become unevenly distributed and non-uniform. This allows for the formation of a CAAC-OS film with uniform thickness without overlapping.

[0319] By reducing the inclusion of impurities during film formation, it is possible to suppress the disruption of the crystalline state due to impurities. For example, the concentration of impurities present in the deposition chamber (such as hydrogen, water, carbon dioxide, and nitrogen) can be measured. It would be good to reduce it. Also, it would be good to reduce the impurity concentration in the film formation gas. Specifically, the dew point is A film-forming gas with a temperature of -80°C or lower, preferably -100°C or lower, is used.

[0320] Furthermore, by increasing the oxygen content in the deposition gas and optimizing the power, plasma damage during film deposition can be reduced. It is preferable to reduce the amount of oxygen. The oxygen content in the film-forming gas is 30% by volume or more, preferably 100%. This is expressed as a percentage by volume.

[0321] Alternatively, the CAAC-OS film is formed by the following method.

[0322] First, a first oxide semiconductor film is deposited with a thickness of 1 nm or more and less than 10 nm. The semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C or higher. The temperature should be 500°C or lower, preferably 150°C to 450°C, and the oxygen content in the film-forming gas should be 30%. The film is formed at a volume of % or more, preferably 100% by volume.

[0323] Next, a heat treatment is performed to transform the first oxide semiconductor film into a highly crystalline first CAAC-OS film. The heat treatment temperature shall be 350°C to 740°C, preferably 450°C to 650°C. The temperature should be below ℃. Furthermore, the heat treatment time should be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. The temperature should be below a certain level. Furthermore, the heat treatment may be carried out in an inert or oxidizing atmosphere. Alternatively, the material is heated in an inert atmosphere, followed by heat treatment in an oxidizing atmosphere. Heat treatment in an air-filled environment allows for a rapid reduction in the impurity concentration of the first oxide semiconductor film. Yes, it is possible. On the other hand, heat treatment in an inert atmosphere generates oxygen vacancies in the first oxide semiconductor film. This can occur. In such cases, the oxygen deficiency is reduced by heat treatment in an oxidizing atmosphere. It is possible. Furthermore, the heat treatment can be performed at 1000 Pa or less, 100 Pa or less, or 10 Pa or less. This may be carried out under reduced pressure of 1 Pa or less. Under reduced pressure, the impurity concentration of the first oxide semiconductor film This can be reduced in an even shorter amount of time.

[0324] The first oxide semiconductor film has a thickness of 1 nm or more and less than 10 nm, so the thickness is 1 Compared to cases where the wavelength is 0 nm or greater, crystallization can be easily achieved by heat treatment.

[0325] Next, a second oxide semiconductor film having the same composition as the first oxide semiconductor film is made 10 nm or more in thickness. The first film is deposited to a thickness of 0 nm or less. The second oxide semiconductor film is deposited using the sputtering method. Specifically, the substrate temperature is set to 100°C to 500°C, preferably 150°C to 450°C. The temperature should be below ℃, and the oxygen content in the film-forming gas should be 30% by volume or more, preferably 100% by volume. To form a membrane.

[0326] Next, a heat treatment is performed to solid-phase grow a second oxide semiconductor film from the first CAAC-OS film. This process creates a second CAAC-OS film with high crystallinity. The heat treatment temperature is 350°C. The temperature should be between 740°C and 750°C, preferably between 450°C and 650°C. The interval shall be between 1 minute and 24 hours, preferably between 6 minutes and 4 hours. Furthermore, the heat treatment shall be as follows: The process can be carried out in an inert or oxidizing atmosphere. Preferably, the heat treatment is performed in an inert atmosphere. After this, heat treatment is performed in an oxidizing atmosphere. Heat treatment in an inert atmosphere produces a second acid The impurity concentration of the ionized semiconductor film can be reduced in a short time. On the other hand, in an inert atmosphere... Heat treatment can create oxygen vacancies in the second oxide semiconductor film. In that case, oxidation The oxygen deficiency can be reduced by heat treatment in a suitable atmosphere. Note that the heat treatment is 1 It can also be done under reduced pressure of 000 Pa or less, 100 Pa or less, 10 Pa or less, or 1 Pa or less. Under reduced pressure, the impurity concentration of the second oxide semiconductor film can be reduced even more quickly. Cut.

[0327] In this manner, a CAAC-OS film with a total thickness of 10 nm or more is formed. It is possible.

[0328] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes.

[0329] (Embodiment 10) Various examples have been shown in other embodiments. However, one aspect of the present invention is this It is not limited to them.

[0330] For example, in this specification, transistors of various structures are used as transistors. This is possible. Therefore, there are no restrictions on the type of transistor used. An example of a transistor. Examples include transistors made of single-crystal silicon, or amorphous silicon, polycrystalline silicon Microcrystals (also called nanocrystals or semi-amorphous crystals) Transistors with non-single-crystal semiconductor films, such as those found in capacitors, can be used. Alternatively, thin-film transistors (TFTs) made by thinning these semiconductors can be used. Yes, it's possible. Using TFTs offers various advantages. For example, compared to single-crystal silicon... Because it can be manufactured at a lower temperature, it can reduce manufacturing costs or allow for the use of larger manufacturing equipment. Yes, it is possible. Because the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Therefore, many can be manufactured simultaneously. Because it is possible to manufacture a certain number of display devices, it can be manufactured at a low cost. Alternatively, because the manufacturing temperature is low Therefore, substrates with poor heat resistance can be used. ZISTA can be manufactured. Alternatively, a display element can be made using a transistor on a light-transmitting substrate. It is possible to control the transmission of light. Alternatively, because the film thickness of the transistor is thin, A portion of the film forming the star can transmit light. Therefore, the aperture ratio is improved. It is possible.

[0331] Furthermore, when manufacturing polycrystalline silicon, by using a catalyst (such as nickel), Further improvement in crystallinity makes it possible to manufacture transistors with superior electrical properties. As a result, gate driver circuit (scan line drive circuit), source driver circuit (signal line drive circuit) ), and signal processing circuits (signal generation circuits, gamma correction circuits, DA conversion circuits, etc.) are mounted on the substrate. It can be formed as a single unit.

[0332] Furthermore, when manufacturing microcrystalline silicon, by using a catalyst (such as nickel), This further improves crystallinity, making it possible to manufacture transistors with superior electrical properties. In this case, crystallinity can be improved simply by applying heat treatment without laser irradiation. This is also possible. As a result, part of the source driver circuit (such as analog switches) and the game The driver circuit (scan line drive circuit) can be integrally formed on the substrate. If laser irradiation is not performed, the unevenness of silicon crystallinity can be suppressed. Therefore, it is possible to display images with improved image quality. However, catalysts (such as nickel) It is possible to manufacture polycrystalline silicon or microcrystalline silicon without using ( ).

[0333] Furthermore, improving the crystallinity of silicon to polycrystalline or microcrystalline forms affects the entire panel. It is preferable to do so, but it is not limited to that. In only a portion of the panel, silicate The crystallinity of the material may be improved. Selectively improving crystallinity can be achieved by selecting the laser light. This is possible by selectively illuminating the area, for example, the peripheral circuit area, which is an area other than the pixel. Only in the region of gate driver circuit and source driver circuit, or source driver Even if you irradiate only a part of the circuit (for example, an analog switch) with laser light, Good. As a result, silicon crystallization is directed only to the areas where the circuit needs to operate at high speed. It can be improved. The pixel area does not require high-speed operation, so the crystallinity is improved. Even without this, the pixel circuit can operate without any problems. Because it requires less area to improve crystallinity, the manufacturing process can also be shortened. This can improve throughput and reduce manufacturing costs. Or, as required Because it can be manufactured with a small number of manufacturing machines, manufacturing costs can be reduced.

[0334] For example, a transistor is a compound semiconductor (e.g., SiGe, GaAs, etc.). ), or oxide semiconductors (for example, ZnO, InGaZnO, IZO (indium zinc oxide) (Material), ITO (Indium Tin Oxide), SnO, TiO, AlZnSnO (AZTO), Transistors containing ITZO (In-Sn-Zn-O, etc.) can be used. Alternatively, these compound semiconductors, or thin films made by thinning these oxide semiconductors, can be used. Indicators and the like can be used. These allow the manufacturing temperature to be lowered, for example This makes it possible to manufacture transistors at room temperature. As a result, substrates with low heat resistance, for example... Transistors can be directly formed on plastic substrates or film substrates. Furthermore, these compound semiconductors or oxide semiconductors are used in the channel portion of transistors. Furthermore, these compound semiconductors can also be used for other purposes. For example, these compound semiconductors or Oxide semiconductors are used as wiring, resistive elements, pixel electrodes, or light-transmitting electrodes. This can be done. Since they can be deposited or formed simultaneously with the transistor, the cost It can be reduced.

[0335] As an example of a transistor, a transistor formed using an inkjet method or printing method is... Rangistas and the like can be used. These allow for manufacturing at room temperature, manufacturing at low vacuum levels, and It can be manufactured on a large substrate. Therefore, it can be manufactured without using a mask (reticle). This makes it possible to easily change the layout of the transistors. Alternatively, since it is possible to manufacture without using resist, material costs are reduced and the number of processes is eliminated. It can be reduced. Or, it is possible to apply the film only to the necessary parts, so after forming a film over the entire surface... This method is less wasteful and lower-cost than etching.

[0336] As an example of a transistor, there is a transistor that has organic semiconductors or carbon nanotubes. Transistors and the like can be used. With these, transients can be applied to a bendable substrate. It is possible to form transistors. Transistors containing organic semiconductors or carbon nanotubes. Devices using this technology can be made more resistant to impact.

[0337] Furthermore, transistors with various other structures can also be used. For example, transistors include MOS type transistors, junction type transistors, and bipod type transistors. A transistor such as a MOS-type transistor can be used. By using this, the size of the transistor can be reduced. Therefore, a large number of transistors It can be equipped with a transistor. Bipolar transistors are used as transistors. This allows for the flow of a large current. Therefore, it is possible to operate the circuit at high speed. Yes, it is possible. Furthermore, MOS transistors and bipolar transistors can be mixed on a single substrate. It may be formed in this way. This will enable low power consumption, miniaturization, and high-speed operation. Yes, it's possible.

[0338] For example, in this specification, an example of a transistor is one with two or more gate electrodes. A multi-gate transistor can be used. With a multi-gate structure, Because the channel regions are connected in series, the structure consists of multiple transistors connected in series. Therefore, the multi-gate structure reduces off-current and improves the transistor's breakdown voltage (reliability). This can improve performance. Alternatively, a multi-gate structure can be used when operating in the saturation region. Even if the voltage between the drain and source changes, the current between the drain and source remains constant. A voltage-current characteristic with no change and a flat slope can be obtained. By utilizing the voltage-current characteristics, an ideal current source circuit or a circuit with very high resistance can be created. Active loading can be realized. As a result, a differential circuit or current mirror circuit with good characteristics can be achieved. It can be used to create roads and other structures.

[0339] As an example of a transistor, there is a configuration in which gate electrodes are arranged above and below the channel. A transistor of this type can be applied. The gate electrodes are arranged above and below the channel. By doing so, the circuit configuration becomes one in which multiple transistors are connected in parallel. This increases the channel area, allowing for an increase in the current value. Alternatively, the channel By arranging gate electrodes above and below, a depletion layer is more likely to form. Therefore, it is possible to improve the S value.

[0340] For example, in a transistor, the gate electrode is located above the channel region. Structure, structure in which the gate electrode is located below the channel region, positive staggered structure, inverse staggered structure Structure, a structure in which the channel region is divided into multiple regions, a structure in which the channel regions are connected in parallel, or A transistor with a structure in which the channel regions are connected in series can be used. Alternatively, Transistors include planar type, fin type, and tri-gate type. Gate type, top gate type, bottom gate type, double gate type (gates above and below the channel) Various configurations are possible, such as (where the "T" is placed).

[0341] As an example of a transistor, the channel region (or part thereof) may contain source electrodes or A transistor with a structure in which the drain electrodes overlap can be used. Channel region ( By creating a structure in which the source electrode or drain electrode overlaps (or part thereof), This prevents unstable operation caused by the accumulation of charge in a portion of the Nell region.

[0342] As an example of a transistor, a structure with an LDD region can be applied. LDD region By providing this feature, the off-current is reduced, or the transistor's breakdown voltage is improved (reliability is improved). This can be achieved. Alternatively, by providing an LDD region, when operating in the saturation region, Even if the voltage between the drain and source changes, the drain current does not change much, and the slope is It is possible to obtain rat-like voltage and current characteristics.

[0343] For example, in this specification, it is possible to form transistors using various substrates. It will come. The type of circuit board is not limited to a specific one. One example of such a circuit board is a semi-circular one. Conductive substrates (e.g., single crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, Plastic substrates, metal substrates, stainless steel substrates, stainless steel foil Substrates containing tungsten, tungsten substrates, substrates containing tungsten foil, flexible substrates, adhesive Examples include laminated films, paper containing fibrous materials, or base films. One example is a glass substrate. Examples include barium borosilicate glass, aluminoborosilicate glass, or soda-lime glass. Examples include glass. Flexible substrates, laminated films, and base films are examples of such materials. The following are examples: For example, polyethylene terephthalate (PET), polyethylene Plasti There are acrylics. Or, as an example, synthetic resins such as acrylic. Or, as an example, For example, polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Yes, there are. Or, as an example, polyamide, polyimide, aramid, epoxy, inorganic vapor deposition. These include films and paper products. In particular, semiconductor substrates, single crystal substrates, or SOI substrates. By using this to manufacture transistors, variations in characteristics, size, or shape can be reduced. It is possible to manufacture transistors that are small, have high current capacity, and are small in size. When circuits are constructed using transistors, the power consumption of the circuit can be reduced, or the integration of the circuit can be increased. It is possible to measure this.

[0344] Furthermore, a transistor is formed using one substrate, and then the transistor is transferred to another substrate. Alternatively, the transistor may be placed on a different substrate. An example of a substrate on which the transistor is relocated. In addition to the substrates on which the aforementioned transistors can be formed, paper substrates, cellophane Substrates, aramid film substrates, polyimide film substrates, stone substrates, wood substrates, cloth substrates (Natural fibers (silk, cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or (This includes regenerated fibers (acetate, cupro, rayon, recycled polyester, etc.), leather) These include substrates, or rubber substrates. By using these substrates, good transient characteristics can be achieved. Formation of transistors, formation of low-power transistors, manufacturing of durable devices, heat-resistant coatings It is possible to reduce the weight or thickness of the device.

[0345] Furthermore, all the circuits necessary to realize the specified function are placed on the same circuit board (for example, glass It can be formed on substrates such as stainless steel substrates, plastic substrates, single crystal substrates, or SOI substrates. Yes. In this way, cost reduction is achieved by reducing the number of parts, or by reducing the number of connection points with circuit components. This can improve reliability.

[0346] Furthermore, it is not necessary to form all the circuits required to achieve a given function on the same circuit board. It is possible. In other words, some of the circuits necessary to realize a predetermined function are formed on a certain substrate. Furthermore, another part of the circuit necessary to achieve the predetermined function is formed on a separate substrate. It is possible to do so. For example, a part of the circuit necessary to realize a certain function is made of glass. Another part of the circuitry formed on the substrate and necessary to realize a predetermined function is a single crystal substrate. It can be formed on (or SOI substrate). And to realize a predetermined function A single crystal substrate (also called an IC chip) on which another part of the necessary circuitry is formed is called COG ( The IC is connected to a glass substrate via a Chip-On-Glass (Chip On Glass) and the IC is placed on the glass substrate. It is possible to place the chip. Alternatively, the IC chip can be placed using TAB (Tape Auto). omated Bonding), COF(Chip On Film), SMT(Su Using glass (rface Mount Technology), or printed circuit boards, etc. It is possible to connect to the substrate. In this way, a part of the circuit is formed on the same substrate as the pixel section. As a result, costs are reduced by reducing the number of components, or the number of connections to circuit components. Reliability can be improved by reducing this. In particular, circuits with high drive voltages, Circuits with high drive frequencies often consume a lot of power. So, this kind of circuit is formed on a separate substrate (for example, a single-crystal substrate) from the pixel section, and the IC chip... This IC chip forms the component. By using this IC chip, it is possible to prevent an increase in power consumption. ru.

[0347] Furthermore, any content not specified in the drawings or text within the specification will be excluded. An invention can be constructed that defines the following: or, for a certain value, an upper limit and a lower limit. If a numerical range is specified, such as indicated by the following, you can narrow that range arbitrarily, or By excluding one point within that range, the invention can be defined with a portion of that range excluded. These measures, for example, define that prior art does not fall within the technical scope of the present invention. It is possible.

[0348] As a concrete example, consider a circuit diagram that uses the first to fifth transistors in a certain circuit. Let's assume it's described. In that case, the circuit does not have a sixth transistor. It is possible to define this as an invention. Or, the circuit does not have a capacitive element. It is possible to define that the circuit has a certain connection structure. The invention can be defined as not having a sixth transistor. The circuit is defined as not having a capacitive element with a certain connection structure. A light can be formed. For example, the gate is connected to the gate of a third transistor. It is possible to define the invention as not having a sixth transistor. Or, For example, a capacitive element having a first electrode connected to the gate of a third transistor. It is possible to define an invention as "not having one."

[0349] Another concrete example is, for a certain value, for example, "a certain voltage is between 3V and 10V." It is stated that "it is preferable to do so." In that case, for example, if a certain voltage is -2V It is possible to define the invention as "except in the case where the voltage is greater than or equal to 1V or less." Or, for example, It is possible to define the invention as "except when a certain voltage is 13V or higher." For example, the invention can also be defined as having a voltage of 5V or more and 8V or less. For example, the invention can also be defined as having a voltage of approximately 9V. The invention is defined as having a voltage that is between 3V and 10V, except when it is 9V. It is also possible.

[0350] Another concrete example would be, for a certain value, "It is preferable that a certain voltage be 10V." Let's assume it is stated that "it is." In that case, for example, a certain voltage is -2V or more and 1V or less. It is possible to define the invention as except in the case of, or, for example, if a certain voltage is It is possible to define the invention as "except in cases where the voltage is 13V or higher."

[0351] Another concrete example is describing the properties of a certain substance, for example, "a certain film is an insulating film." Assume it is described. In that case, except, for example, when the insulating film is an organic insulating film. , and the invention can be defined as such. Or, for example, if the insulating film is an inorganic insulating film It is possible to define the invention as "except in the case of..."

[0352] Another concrete example is a layered structure, for instance, "a film is provided between A and B." Let's assume it is stated that "it is made of four or more layers". In that case, for example, the film is a laminated film of four or more layers. It is possible to define the invention as except in the case of A and its film. The invention can be defined as "except in cases where a conductive film is provided between them."

[0353] Furthermore, the inventions described herein can be implemented by various people. However, its implementation may involve multiple people. For example, In the case of a receiving system, Company A manufactures and sells the transmitter, and Company B manufactures the receiver. They may be sold. Another example is in the case of light-emitting devices having TFTs and light-emitting elements. In this agreement, the semiconductor device on which the TFT is formed will be manufactured and sold by Company A. The company purchased the semiconductor device, deposited a light-emitting element onto it, and used it as a light-emitting device. There are times when it means completing something.

[0354] In such a case, the invention would allow for a patent infringement claim against either Company A or Company B. This constitutes one aspect of the patent infringement. Therefore, a claim of patent infringement can be made against Company A or Company B. One aspect of the invention that can be made is clear and is deemed to be described in this specification, etc. Yes, it is possible. For example, in the case of a transmission and reception system, the transmitter alone constitutes one aspect of the invention. It is possible to constitute one aspect of the invention with only a receiver, and such aspects of the invention are It is clear and can be determined to be described herein, etc. Another example is, In the case of a light-emitting device having a TFT and a light-emitting element, the semiconductor device on which the TFT is formed One aspect of the invention can be constituted by only a light-emitting device having a TFT and a light-emitting element. This can constitute one aspect of the invention, and such aspects of the invention are clearly defined in this specification. It can be concluded that this is stated in the relevant documents.

[0355] In this specification, active elements (transistors, diodes, etc.), passive elements ( For all terminals of capacitive elements, resistive elements, etc., the destination of their connection is not specified. However, a person skilled in the art may be able to constitute one aspect of the invention. In other words, connection Even without specifying the destination, one aspect of the invention can be said to be clear. And the connection destination is specified. If the content is described in this specification, etc., then one aspect of the invention that does not specify the connection destination is described in this specification. In some cases, it can be determined that this is described in the documentation. In particular, if the terminal has multiple connection destinations. In cases where a connection to that terminal is possible, it is not necessary to limit the connection destination to a specific location. Therefore, active elements (transistors, diodes, etc.), passive elements (capacitors, resistors, etc.) By specifying the connection destination for only some of the terminals that the invention has, It may be possible to constitute one aspect.

[0356] Furthermore, in this specification, etc., if a certain circuit is specified, then at least the connection destination is identified, and this applies to our business. If you are an expert, you may be able to identify the invention. Or, regarding a certain circuit, However, if the function is specified, a person skilled in the art may be able to specify the invention. In other words, if the function is specified, it can be said that one aspect of the invention is clear. It may be possible to determine that one aspect of the invention is described in this specification, etc. Therefore, even without specifying the function of a certain circuit, if the connection destination is specified, it constitutes an invention. It is disclosed as such and can constitute one aspect of the invention. Regarding a certain circuit, even if the connection destination is not specified, if the function is specified, it can be considered as one aspect of the invention. This has been disclosed and can constitute one aspect of the invention.

[0357] In this specification, etc., the figures or text described in a particular embodiment may differ from the actual figures or text. Therefore, it is possible to take a part of it and constitute one aspect of the invention. If a diagram or text describing a part is included, remove a portion of that diagram or text. The information provided is disclosed as one aspect of the invention and constitutes one aspect of the invention. It is assumed that this is possible. For example, active elements (transistors, diodes) (etc.), wiring, passive elements (capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic Drawings that describe one or more materials, inorganic materials, parts, devices, operating methods, manufacturing methods, etc. Alternatively, in a text, it is possible to extract a part of it and constitute one aspect of the invention. Let's assume that it has N (where N is an integer) circuit elements (transistors, capacitive elements, etc.). From a circuit diagram configured as such, it is possible to extract M (M is an integer, M<N) circuit elements (transistors, capacitors elements, etc.) to constitute one embodiment of the invention. As another example, from a cross-sectional view configured with N (N is an integer) layers, it is possible to extract M (M is an integer, M<N) layers to constitute one embodiment of the invention. As yet another example, from a flowchart configured with N ( N is an integer) elements, it is possible to extract M (M is an integer, M<N) elements to constitute one embodiment of the invention.

[0358] Note that in this specification and the like, when at least one specific example is described in the drawings or text described in a certain embodiment , a higher-level concept derived from that specific example can be easily understood by a person skilled in the art . Therefore, when at least one specific example is described in the drawings or text described in a certain embodiment , the higher-level concept of that specific example is also disclosed as one embodiment of the invention, and can constitute one embodiment of the invention , and can constitute one embodiment of the invention. This is possible.

[0359] Note that in this specification and the like, at least the content described in the drawings (which may be a part of the drawings) is disclosed as one embodiment of the invention, and can constitute one embodiment of the invention . Therefore, if a certain content is described in a drawing, even if it is not described in text , that content is disclosed as one embodiment of the invention, and can constitute one embodiment of the invention . Similarly, a drawing obtained by extracting a part of a drawing is also disclosed as one embodiment of the invention, and can constitute one embodiment of the invention .

[0360] Note that in the diagram, the size, layer thickness, or area may be exaggerated for clarity. There is a compatibility issue. Therefore, it is not necessarily limited to that scale.

[0361] In this specification, for example, the shape of an object is referred to as "diameter," "particle size," "size," "size," When specifying by "width," etc., it refers to the length of one side of the smallest cube in which the object can be contained, or the object itself. This can also be interpreted as the equivalent diameter of a circle in one cross-section of an object. The equivalent diameter of a circle in one cross-section of an object is the diameter of a circle in one cross-section of an object. This refers to the diameter of a perfect circle whose area is equal to that of one cross-section of a body.

[0362] Furthermore, even when the term "semiconductor" is used, if, for example, its conductivity is sufficiently low, it can be referred to as an "insulator." They may have the following characteristics. Also, the boundary between "semiconductors" and "insulators" is ambiguous, and strictly speaking... In some cases, it may be impossible to distinguish between them. Therefore, the term "semiconductor" as used in this specification is used interchangeably with "insulator". In some cases, it can be rephrased. Similarly, the term "insulator" as used herein may be interpreted as "semiconductor." In some cases, this can be rephrased as "...".

[0363] Furthermore, even when the term "semiconductor" is used, if, for example, its conductivity is sufficiently high, it can be referred to as a "conductor." They may have certain characteristics. Also, the boundary between "semiconductors" and "conductors" is ambiguous, and strictly speaking... In some cases, it may be impossible to distinguish between them. Therefore, the term "semiconductor" as used in this specification is used interchangeably with "conductor". In some cases, it can be rephrased. Similarly, the term "conductor" as used herein means "semiconductor." In some cases, this can be rephrased as "...".

[0364] Furthermore, impurities in a semiconductor film refer to components other than the main components that make up the semiconductor film. For example, Elements with a concentration of less than 0.1 atomic percent are considered impurities. The presence of impurities means that For example, carrier traps may form in the semiconductor film, or carrier mobility may decrease. For example, a decrease in crystallinity may occur. In this case, impurities that change the properties of the semiconductor film include, for example, Group 1 elements, Group 2 elements, These include Group 14 elements, Group 15 elements, and transition metals other than the main components, and in particular, for example, hydrogen ( Lithium, sodium, silicon, boron, phosphorus, carbon, nitrogen, etc. (also found in water) Yes, in the case of oxide semiconductors, oxygen vacancies can form due to the inclusion of impurities. When the semiconductor film is a silicon film, impurities that change the properties of the semiconductor film include, for example, For example, there are the elements of Group 1 (excluding oxygen and hydrogen), Group 2, Group 13, and Group 15. .

[0365] Furthermore, in this specification, excess oxygen refers to, for example, oxygen present in a quantity exceeding the stoichiometric composition. This refers to excess oxygen. Alternatively, excess oxygen refers to oxygen released, for example, by heating. For example, elements can move within a membrane or layer. The movement of excess oxygen is due to the atoms of the membrane or layer. This can involve movement between two parts of the molecule, or a chain reaction movement where the molecules replace the oxygen that makes up the membrane or layer. Furthermore, insulating films containing excess oxygen can release oxygen through processes such as heat treatment. It is an insulating film that has the ability to do so.

[0366] Furthermore, in this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. This refers to the state in which something is positioned. Therefore, it also includes cases where the angle is between -5° and 5°. Also, "Perpendicular" refers to a state where two lines are positioned at an angle between 80° and 100°. Therefore, this also includes cases where the angle is between 85° and 95°.

[0367] In the embodiment, the conductive film may be, for example, aluminum, titanium, chromium, or cobalt. Nickel, copper, yttrium, zirconium, molybdenum, ruthenium, silver, tantalum A conductive film containing tungsten or tulse may be used as a single layer or in a multilayer configuration. Examples of conductive films with transient properties include In-Zn-W oxide films, In-Sn oxide films, Oxide films such as In-Zn oxide films, indium oxide films, zinc oxide films, and tin oxide films It is fine to use it. Also, the aforementioned oxide film can be used even if trace amounts of Al, Ga, Sb, F, etc. are added. Good. Also, a thin metal film that transmits light (preferably between 5 nm and 30 nm) It is also possible to use an Ag film, Mg film, or Ag-Mg compound having a thickness of 5 nm. A gold film may be used. Alternatively, a film that efficiently reflects visible light could be, for example, lithium , including aluminum, titanium, magnesium, lanthanum, silver, silicon, or nickel A membrane can be used.

[0368] In addition, examples of insulating films include aluminum oxide, magnesium oxide, silicon oxide, Silicon oxide nitride, silicon nitride, silicon nitride, gallium oxide, germanium oxide Yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide Alternatively, an insulating film containing tantalum oxide may be used in a single layer or in a multilayer configuration. Resin films such as imide resin, acrylic resin, epoxy resin, and silicone resin may also be used. do not have.

[0369] Furthermore, in this specification, if a crystal is trigonal or rhombohedral, it will be represented as a hexagonal crystal system. .

[0370] Furthermore, the terms "first," "second," "third," etc. used in this specification are used to avoid confusion of constituent elements. This is a selection and not a numerical limit. Therefore, for example, "the first" This can be explained by substituting "the second" or "the third" as appropriate.

[0371] In this specification, when an etching process is performed after a photolithography process: The mask formed during the photolithography process shall be removed.

[0372] Furthermore, the transistor has a second gate for applying a potential to the back channel. In some cases, a gate may be provided. In that case, to distinguish between the two gates, we will refer to the gate and the normal call gate. We'll call the terminal that's exposed the "front gate," and the other one the "back gate."

[0373] Furthermore, voltage refers to the potential difference between two points, while electric potential refers to the electrostatic field at a given point. This refers to the electrostatic energy (electrical potential energy) possessed by a unit charge within a given object. Furthermore, generally speaking, the potential difference between the potential at a certain point and a reference potential (for example, the ground potential) This is simply called electric potential or voltage, and the terms electric potential and voltage are often used as synonyms. Therefore, unless otherwise specified in this specification, potential may be read as voltage. You may substitute "voltage" with "potential."

[0374] Furthermore, in this specification, voltage refers to a certain potential and a reference potential (e.g., ground potential). It often refers to the potential difference. Therefore, voltage, potential, and potential difference are expressed as potential, voltage, This can be rephrased as voltage difference.

[0375] Generally speaking, electric potential and voltage are relative. Therefore, ground potential is... It is not necessarily limited to 0 volts.

[0376] A transistor is a type of semiconductor device that amplifies current and voltage, and controls conduction or non-conductivity. It is possible to realize controlled switching operations, etc. Transistors in this specification are , IGFET(Insulated Gate Field Effect Trans istors and thin-film transistors (TFTs) ) includes.

[0377] For example, in this specification, a transistor has a gate, a drain, and a source. It is an element having at least three terminals, including the drain (drain terminal, drain (In-field or drain electrode) and source (source terminal, source area or source electrode) It has a channel region in between, and current flows through the drain, the channel region and the source. It is possible to do this. Here, source and drain refer to the structure or operation of the transistor. Because it varies depending on the conditions, it is difficult to determine which is the source and which is the drain. It is difficult. Therefore, the part that functions as a source and the part that functions as a drain are Sometimes they are not called source or drain. In that case, for example, the source and drain One side is referred to as the first terminal, first electrode, or first region, and the other side of the source and drain is referred to as the first It may be referred to as a 2-terminal, second electrode, or second region.

[0378] For example, in this specification, it is explicitly stated that X and Y are connected. In this case, X and Y are electrically connected, and X and Y are functionally connected. The cases in which X and Y are directly connected are disclosed in this specification, etc. Here, X and Y are the object (for example, a device, element, circuit, wiring, electrode, terminal, conductive film). Assume that it is a layer, etc. Therefore, a predetermined connection relationship, for example, shown in a diagram or text. This includes not only the connection relationships shown in the diagram or text, but also those other than those shown in the diagram or text. This shall be described in a diagram or text.

[0379] One example of a case where X and Y are directly connected is when an electrical connection between X and Y is possible. Elements such as switches, transistors, capacitive elements, inductors, resistive elements, and dies. If the diode, display element, light-emitting element, load, etc. are not connected between X and Y and elements that enable electrical connection between X and Y (e.g., switches, transistors, capacitors). Without the need for elements such as components, inductors, resistors, diodes, display elements, light-emitting elements, loads, etc. This is the case when X and Y are connected.

[0380] One example of a case where X and Y are electrically connected is when the electrical connection between X and Y is possible. Elements that perform this function (for example, switches, transistors, capacitive elements, inductors, resistive elements, etc.) One or more elements (such as ions, display elements, light-emitting elements, and loads) are connected between X and Y. This is possible. Furthermore, the switch has a function that allows it to be controlled to be on or off. In other words, A switch can be either conductive (on) or non-conductive (off), allowing current to flow. It has a function to control whether or not current flows. Alternatively, the switch selects the path through which the current flows. It has a function to switch between them. Note that if X and Y are electrically connected, X This includes cases where and Y are directly connected.

[0381] One example of a functional connection between X and Y is enabling a functional connection between X and Y. Circuits that perform this function (for example, logic circuits (inverters, NAND gates, NOR gates, etc.), signal transformers) Conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (electric (Source circuits (boost circuits, buck circuits, etc.), level shifter circuits that change the potential level of a signal, etc.) Voltage source, current source, switching circuit, amplification circuit (which can increase signal amplitude or current amount, etc.) Circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc., signal generation One or more circuits (such as memory circuits and control circuits) can be connected between X and Y. For example, even if another circuit is placed between X and Y, the signal output from X If the signal is transmitted to Y, then X and Y are assumed to be functionally connected.

[0382] Furthermore, if it is explicitly stated that X and Y are electrically connected, then X and Y When X and Y are electrically connected (that is, when there is another element or circuit between X and Y) (when connected by) and when X and Y are functionally connected (i.e., X and Y and (When they are functionally connected with another circuit in between) and when X and Y are directly connected In the case where (that is, when X and Y are connected without another element or circuit in between) This shall be disclosed in this specification, etc. That is, it shall be clearly stated that they are electrically connected. Where explicitly stated, it is simply stated that it is connected. Similar information is disclosed in this specification, etc.

[0383] For example, if the source (or first terminal, etc.) of the transistor is connected via Z1 (or via (In short), electrically connected to X, the drain (or second terminal, etc.) of the transistor is connected to Z. If Y is electrically connected via (or without) 2, or if the transistor source (or the first terminal, etc.) is directly connected to a part of Z1, and another part of Z1 is directly connected to X. They are directly connected, with the transistor's drain (or second terminal, etc.) directly connected to a portion of Z2. If it is connected to and another part of Z2 is directly connected to Y, it can be expressed as follows: It is possible to do so.

[0384] For example, "X and Y and the source (or first terminal, etc.) and drain (or second terminal) of the transistor." The terminals (such as the X terminal) are electrically connected to each other, and X is the source (or the X terminal) of the transistor. The electrical connections are in the following order: terminal 1, the drain of the transistor (or terminal 2, etc.), and Y. It can be expressed as "It is connected." Or, "The source (or the source) of the transistor." Terminal 1 (or terminal 2) is electrically connected to X, and the drain (or terminal 2) of the transistor is connected to X. (d) is electrically connected to Y, X is the source of the transistor (or the first terminal, etc.), and the transistor The drain (or second terminal, etc.) of the converter, Y, is electrically connected in this order. It can be expressed as "X is the source (or first terminal) of the transistor." Alternatively, "X is the source (or first terminal) of the transistor." Y is electrically connected to X via the drain (or second terminal, etc.) and X, the transistor The source of the transistor (or the first terminal, etc.), the drain of the transistor (or the second terminal, etc.) ), Y is provided in this connection order. By using a specific method of expression to define the order of connections in the circuit configuration, Distinguish between the source (or first terminal, etc.) and drain (or second terminal, etc.) of the zista. This allows us to determine the technical scope.

[0385] Alternatively, another way to express it is, for example, "the source (or first terminal, etc.) of the transistor." It is electrically connected to X via at least a first connection path, and the first connection path is It does not have a second connection path, and the aforementioned second connection path is via a transistor, The source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor. The path between ( and ), and the first connection path is a path via Z1, and the transit The drain (or second terminal, etc.) of the terminal is electrically connected to Y via at least a third connection path. They are connected in a manner, and the third connection path does not have the second connection path, and the third The connection path is the path via Z2. This can be expressed as "The transition The source of the starter (or the first terminal, etc.) is connected via Z1 through at least the first connection path. And, electrically connected to X, the first connection path does not have a second connection path, The second connection path has a connection path via a transistor, and the drain of the transistor (or a second terminal, etc.) is connected to Y via Z2 by at least a third connection path. It is expressed as: "They are electrically connected, and the third connection path does not have the second connection path." It is possible. Or, "the source (or first terminal, etc.) of the transistor is less Both are electrically connected to X via Z1 through a first electrical path, and the first electrical The target path does not have a second electrical path, and the second electrical path is the transistor From the source (or first terminal, etc.) to the drain (or second terminal, etc.) of the transistor It is an electrical path, and the drain (or second terminal, etc.) of the transistor is at least third The electrical path is electrically connected to Y via Z2, and the third electrical path is , it does not have a fourth electrical path, and the fourth electrical path is the drain of the transistor The electrical pulse from (or the second terminal, etc.) to the source (or the first terminal, etc.) of the transistor It can be expressed as "It is S." Using similar methods of expression as these examples, the circuit configuration By defining the connection path in the transistor, the source (or first terminal) To distinguish between the drain (or second terminal, etc.) and the second terminal, and to determine the technical scope. It is possible.

[0386] Note that these methods of expression are just examples and are not limited to these methods. Here, X Y, Z1, and Z2 are the objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, etc.) Let's assume it is a layer, etc.

[0387] Note that, in circuit diagrams, independent components are shown as being electrically connected to each other. Even in such cases, one component may possess the functions of multiple components. For example, if part of the wiring also functions as an electrode, one conductive film will perform the function of the wiring, and It possesses the functions of both components of the electrode's function. Therefore, the electrode in this specification A conductive connection is a situation where a single conductive film combines the functions of multiple components. Combined forms are also included in that category.

[0388] For example, in this specification, Y is formed on X, or Y is formed on X. When explicitly stating that something is formed, it means that Y is directly in contact with X. This is not limited to cases where there is no direct contact, that is, when another object is interposed between X and Y. This also includes the case where X and Y are the object (e.g., device, element, circuit, wiring, (Let's assume it is an electrode, terminal, conductive film, layer, etc.)

[0389] Therefore, for example, explicitly stating that layer Y is formed on (or on layer X) layer X. If described, this applies to cases where layer Y is formed in direct contact with layer X, and where layer X is formed on top of layer X. Another layer (e.g., layer Z) is formed in direct contact with it, and layer Y is formed on top of it in direct contact. This includes cases where this has been done. Note that another layer (e.g., layer Z) may be a single layer. And, multi-layered (laminated) construction is also acceptable.

[0390] Furthermore, the same applies when it is explicitly stated that Y is formed above X. It is not limited to Y being directly in contact with X, but rather there may be another object between X and Y. This includes cases where an intervening layer exists. Therefore, for example, if layer Y is formed above layer X, In this case, there are two possibilities: when layer Y is formed in direct contact with layer X, and when layer Y is formed in direct contact with layer X. Then another layer (for example, layer Z) is formed, and layer Y is formed directly in contact with it. This includes cases where... Furthermore, another layer (e.g., layer Z) may be a single layer or a multi-layered layer. (Laminated) is also acceptable.

[0391] Furthermore, Y is formed on top of X, Y is formed on top of X, or Y is formed above X. When explicitly stating that something has been achieved, this includes cases where Y is formed diagonally above X. do.

[0392] The same applies when Y is below X, or when Y is below X.

[0393] For example, in this specification, etc., "upwards", "upwards", "downwards", "sideways" "To the right," "to the left," "diagonally," "towards the back," "towards the front," "inside," "outside," or Words indicating spatial arrangement, such as "inside," refer to the relationship between one element or feature and another element or feature. It is often used to simply illustrate sequences using diagrams. However, it is not limited to this. These terms describing spatial arrangements can include directions other than those depicted in the diagram. Yes. For example, if it is explicitly stated as "Y on X," it is not limited to Y being on X. It's not possible. The device in the diagram can be inverted or rotated 180°, so Y is below X. It is possible to include a certain thing. In this way, the phrase "upwards" refers to the direction "upwards". In addition, it is possible to include the direction "downward". However, it is not limited to this, and the diagram shows Since the vise can rotate in various directions, the phrase "upwards" means "upwards" and "ascending". In addition to the direction "downward," other directions include "sideways," "right," "left," "diagonally," "backward," and "hand." It can also include other directions such as "forward," "inward," "outward," or "inside." Therefore, it is possible to interpret it appropriately depending on the situation.

[0394] This embodiment may be modified, added, altered, or deleted from some or all of the other embodiments. This corresponds to an application, a higher-level conceptualization, or a lower-level conceptualization. Therefore, this embodiment You may freely combine or adapt parts or all of other embodiments. It can be used or replaced to implement the changes. [Explanation of symbols]

[0395] 10 Electronic gun chamber 12 Optical system 14 Sample Room 16 Optical system 18 Cameras 20 Observation Room 22 Film Room 24 electronic 28 Substance 32 Fluorescent board 101 Electronic equipment 101A Electronic equipment 102 Display device 102A Display device 102B Display device 103 Camera Department 104 areas 105 Subject 106 areas 106A area 106B area 107A illumination light 107B Reflected light 107C illumination light 107D Illumination Light 108A Slider 108AA button 108B Blue Slider 108BA Blue Button 108C Green Slider 108CA Green Button 108D Red Slider 108DA Red Button 109 areas 110 Caller 111 Contact objects 112A Icon 112B Icon 112C Icon 112D Icon 113 Lighting components 114 buttons 115A Icon 115B Icon 116 Network 117 Servers 118 Computers 130 steps 131 steps 132 steps 133 steps 134 steps 135 steps 136 steps 137 steps 201 CPU 203 Storage device 205 Storage device 207 Controller 209 Display device 211 External Ports 213 Network Control Unit 215 Antenna 217 Camera Department 300 Touch Panels 301 Display section 302 pixels 302B subpixels 302G sub-pixels 302R sub-pixel 302t transistor 303c capacity 303g(1) Scan line drive circuit 303g(2) Image Pixel Driving Circuit 303s(1) Image signal line driving circuit 303s(2) Imaging signal line drive circuit 303t transistor 308 image pixels 308p Photoelectric element 308t transistor 309 FPC 310 circuit board 310a Barrier film 310b board 310c adhesive layer 311 Wiring 319 terminals 321 Insulating film 328 Bulkhead 329 Spacer 350R light-emitting element 351R lower electrode 352 Upper electrode 353 layers 353a Light-emitting unit 353b Light-emitting unit 354 Middle Class 360 sealing material 367BM light shielding layer 367p anti-reflection layer 367R colored layer 370 Opposing substrate 370a Barrier film 370b board 370c adhesive layer 380B Light-Emitting Module 380G Light-Emitting Module 380R Light-Emitting Module 400 circuit boards 401 pixel section 402 Scan line drive circuit 403 Scan line drive circuit 404 Signal Line Drive Circuit 410 Capacitance wiring 412 Gate Wiring 413 Gate wiring 414 Drain electrode layer 416 transistors 417 transistors 418 liquid crystal elements 419 liquid crystal elements 420 pixels 421 Switching Transistors 422 Drive Transistors 423 Capacitive element 424 Light-emitting element 425 signal line 426 scan lines 427 Power line 428 Common electrode 500 Touch Panels 500B Touch Panel 501 Display section 502R sub-pixel 502t transistor 503c capacity 503g scan line drive circuit 503t transistor 509 FPC 510 circuit board 510a Barrier film 510b circuit board 510c adhesive layer 511 Wiring 519 terminals 521 Insulating film 528 Bulkhead 550R luminescent element 560 Sealing material 567BM light shielding layer 567p anti-reflection layer 567R colored layer 570 circuit boards 570a Barrier film 570b circuit board 570c ​​adhesive layer 580R Light-Emitting Module 590 circuit boards 591 Electrode 592 Electrode 593 Insulating layer 594 Wiring 595 Touch Sensor 597 Adhesive layer 598 Wiring 599 Connectivity Layer 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8007 Backlight Unit 8008 light source 8009 Frame 8010 Printed Circuit Board 8011 Battery

Claims

[Claim 1] An electronic device comprising a first display device, a second display device, and a camera unit arranged on the same side as the first display device, The first display device has a region that has the function of illuminating a subject with light, and a region that displays an image captured by the camera unit. The second display device has a region that has the function of illuminating a subject with light, and a region that displays an image captured by the camera unit. The region of the second display device that has the function of illuminating the subject with light is larger than the region of the first display device that has the function of illuminating the subject with light. The area of ​​the first display device that has the function of irradiating light onto the subject has the function of being able to overlap with a part of the area of ​​the first display device that displays an image captured by the camera section by touching the area of ​​the first display device that has the function of irradiating light onto the subject with a contact object and moving it, An electronic device in which the direction in which the illumination light from the first display device and the illumination light from the second display device are irradiated differs, by bending the electronic device.

Images