High-throughput plasma lid for semiconductor manufacturing processing chambers

Abstract

A semiconductor manufacturing processing chamber is described, comprising an RF isolator between a support ring and a showerhead, and / or an RF gasket between the showerhead and a gas funnel. A cap insert having a cap housing around the cap insert is located on the gas funnel, and an RF feed is in contact with the showerhead. A substrate support may be included, and the substrate support may have an RF return path directed through the substrate support.

Description

TECHNICAL FIELD

[0001]

[0001] Embodiments of the present disclosure generally relate to apparatuses and methods for semiconductor manufacturing using plasma processing. Specifically, embodiments of the present disclosure relate to apparatuses and methods for high-temperature plasma processing with radio frequency isolation.

BACKGROUND ART

[0002]

[0002] Reliable fabrication of submicron and smaller features is one of the critical requirements for very large scale integration (VLSI) and ultra large scale integration (ULSI) of semiconductor devices. However, with the ongoing miniaturization of circuit technology, the size and pitch dimensions of circuit features such as interconnects have placed even greater demands on processing capabilities. Various semiconductor components (e.g., interconnects, vias, capacitors, transistors) require precise placement of high aspect ratio features. Reliably forming these components is critical to further increasing device performance and density.

[0003]

[0003] In addition, the electronic device industry and the semiconductor industry continue to strive to improve the uniformity of layers deposited on substrates with increasingly larger surface areas while increasing production yield. Combining these same elements with new materials also increases the integration of circuits per unit area on the substrate.

[0004]

[0004] Current process chamber lids are primarily used for plasma-based chemical vapor deposition (CVD) processes. These lids are not designed for atomic layer deposition (ALD) plasma processes. ALD processes require faster saturation and high-speed purge capabilities.

[0005]

[0005] Accordingly, there is a need in the art for apparatuses and methods for plasma-enhanced atomic layer deposition with improved saturation and / or purge capabilities.

SUMMARY OF THE INVENTION

[0006]

[0006] In some embodiments, the technology described herein relates to a semiconductor manufacturing processing chamber, the semiconductor manufacturing processing chamber comprising: a chamber body having side walls, a bottom, and a lid surrounding the interior; a support ring on the side wall; an RF isolator on the support ring; a shower head on the ceramic isolator, having a front and a back surface defining the thickness of the shower head and a plurality of openings extending through the thickness of the shower head; and a gas funnel on the shower head, having a front and a back surface having an opening extending through the center of the gas funnel, the front surface having a concave inner portion and an outer portion. The gas funnel includes a gas funnel in which the outer portion of the front surface of the gas funnel contacts the back surface of the shower head, forming a gas plenum in a concave front surface between the back surface of the shower head and the inner portion of the front surface of the shower head; a cap insert on the gas funnel having an upper and lower portion, the opening on the bottom surface of the cap insert being aligned with an opening in the gas funnel, and having at least one gas inlet at the upper part; a cap housing surrounding the cap insert, the cap housing being in contact with the back surface of the gas funnel; and an RF feed being in contact with the shower head.

[0007]

[0007] To enable a more detailed understanding of the features of the present disclosure described above, a more specific description of the present disclosure, which has been briefly summarized above, can be obtained by referring to the embodiments, some of which are shown in the accompanying drawings. However, it should be noted that the accompanying drawings show only typical embodiments of the present disclosure, and therefore the present disclosure may allow for other equally valid embodiments, and should not be considered to limit its scope. [Brief explanation of the drawing]

[0008] [Figure 1] A schematic cross-sectional view of a semiconductor manufacturing processing chamber 100 according to one or more embodiments of this disclosure is shown. [Figure 2] This shows an enlarged view of the semiconductor manufacturing processing chamber 100 in area II, as shown in Figure 1. [Figure 3] A schematic diagram of the RF power connection in a semiconductor manufacturing processing chamber 100 according to one or more embodiments of the present disclosure is shown. [Modes for carrying out the invention]

[0009]

[0011] Before describing some exemplary embodiments of this disclosure, it should be understood that this disclosure is not limited to the configuration or process step details described below. Other embodiments of this disclosure are possible and can be practiced or implemented in various ways.

[0010]

[0012] As used herein and in the appended claims, the term “substrate” refers to a surface or portion of a surface on which a process is performed. Those skilled in the art will also understand that when a substrate is referred to, unless otherwise explicitly stated in the context, it may refer to only a portion of the substrate. Furthermore, when a deposition on a substrate is referred to, it may mean both a bare substrate and a substrate on which one or more films or features are deposited or formed.

[0011]

[0013] As used herein, “substrate” refers to any substrate or material surface formed on a substrate on which a film treatment is performed during a manufacturing process. For example, substrate surfaces on which the process may be performed include, depending on the application, materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys, and other conductive materials. A substrate includes, but is not limited to, a semiconductor wafer. A substrate may be exposed to pretreatment processes for polishing, etching, reduction, oxidation, hydroxylation, annealing, UV curing, electron beam curing, and / or baking of the substrate surface. In addition to film treatment directly on the surface of the substrate itself, any of the disclosed film treatment steps may be performed on an underlying layer formed on the substrate, as more specifically disclosed below, and the term “substrate surface” is intended to include such underlying layers as the context indicates. Therefore, for example, when a film / layer or partial film / layer is deposited on the substrate surface, the exposed surface of the newly deposited film / layer becomes the substrate surface.

[0012]

[0014] As used herein, “atomic layer deposition” or “periodic deposition” refers to a process comprising sequentially exposing two or more reactive compounds to deposit a layer of material on a substrate surface. As used herein and in the appended claims, terms such as “reactive compound,” “reactive gas,” “reactive species,” “precursor,” and “processing gas” are interchangeable and mean a substance having a species capable of reacting with the substrate surface or the material on the substrate surface in a surface reaction (e.g., chemiadsorption, oxidation, reduction, cycloaddition). The substrate or a portion of the substrate is sequentially exposed to two or more reactive compounds introduced into the reaction area of ​​a processing chamber.

[0013]

[0015] One or more embodiments of this disclosure advantageously provide a semiconductor manufacturing process chamber lid having a faster saturation time. Some embodiments advantageously provide a process chamber lid with improved purging capability. Some embodiments advantageously provide a process chamber lid with high-temperature plasma capability.

[0014]

[0016] One or more embodiments of the present disclosure provide a semiconductor manufacturing process chamber lid having radio frequency (RF) plasma capability on a high-conductance showerhead lid. Some embodiments include an RF feed having an RF matcher through a funnel portion of a gas distribution assembly.

[0015]

[0017] In some embodiments, one or more isolators are incorporated to prevent RF leakage and to have a complete grounding path for RF return. In some embodiments, a cap housing made of ceramic material is used for RF isolation.

[0016]

[0018] Some embodiments incorporate shower heads with an increased number of holes of larger diameter, resulting in increased conductance and higher operating temperature. In some embodiments, the shower head has more than 2100 holes. In some embodiments, the shower head holes have a diameter of about 40 mils.

[0017]

[0019] Some embodiments of this disclosure incorporate shower heads, funnels, and cap inserts coated with a ceramic material. In some embodiments, the ceramic material includes aluminum oxide (Al2O3), also known as alumina. In some embodiments, the aluminum oxide shower heads, funnels, and / or cap inserts enable compatibility with chlorine (Cl2) and hydrogen radical (H*) plasmas.

[0018]

[0020] Referring to Figures 1 and 2, one or more embodiments of the present disclosure relate to a semiconductor manufacturing processing chamber 100. Figure 1 shows a schematic cross-sectional view of a semiconductor manufacturing processing chamber 100 according to one or more embodiments of the present disclosure. Figure 2 shows an enlarged view of the semiconductor manufacturing processing chamber 100 of Figure 1 in region II.

[0019]

[0021] The semiconductor manufacturing processing chamber 100 includes a chamber body 102 having side walls 104 surrounding the interior 109 of the chamber, a bottom 106, and a chamber lid 108. The chamber body 102 can be made of any suitable material known to those skilled in the art. For example, in some embodiments, the chamber body 102 is made of stainless steel. The various components of the embodiments shown in the figures have different cross-hatching for visualization purposes. The different cross-hatching is solely for the purpose of facilitating the distinction between parts and is not related to the material of construction.

[0020]

[0022] The illustrated semiconductor manufacturing processing chamber 100 has a support ring 110 positioned on the side wall 104. The support ring 110 can be considered as part of the side wall 104, or part of the chamber lid 108, or as a separate component. The support ring 110 can be made of any suitable material known to those skilled in the art. For example, in some embodiments, the support ring 110 is made of stainless steel.

[0021]

[0023] The showerhead 120 is located inside the semiconductor manufacturing processing chamber 100. The showerhead 120 is part of a gas distribution assembly and is sometimes referred to as a gas distribution plate.

[0022]

[0024] The shower head 120 has a front surface 122 and a back surface 124 that define the thickness of the shower head 120. Multiple openings 126 extend through the thickness of the shower head 120.

[0023]

[0025] The thickness of the showerhead 120 is measured at the center of the showerhead 120, and gas can pass through the thickness, for example, through a plurality of apertures 126. FIG. 2 shows an enlarged view of region II of FIG. A portion of the illustrated showerhead 120 has a thinner portion near the center of the component relative to the outer portion. The thickness T of the showerhead 120 is marked at the thinner intermediate portion where the plurality of apertures 126 are located. In some embodiments, the showerhead 120 has a smaller thickness than a typical semiconductor manufacturing process chamber showerhead. In some embodiments, the thickness of the showerhead 120 is no greater than 0.5 inches, 0.4 inches, 0.3 inches, or 0.25 inches. A typical showerhead has a thickness greater than 1 inch. The thickness reduction according to various embodiments of the present disclosure uses less material than typical showerheads without losing structural support.

[0024]

[0026] The number of apertures 126 in some embodiments is greater than the number of apertures in a typical showerhead. In some embodiments, there are at least 2000 apertures across the showerhead 120. In some embodiments, the showerhead 120 has 2000, 2100, 2200, 2300, 2400, or 2500 or more apertures.

[0025]

[0027] Each of the plurality of apertures 126 in some embodiments has an upper portion 126a, an intermediate portion 126b, and a lower portion 126c, as shown in FIG. The intermediate portion 126 is the thinnest part of the aperture, and the lower portion 126c is enlarged to distribute a wider range of gas flow. The upper portion 126a can be of any suitable shape, such as but not limited to the rectangular cross-section shown in FIG. 2. The size of the aperture 126 is measured at the intermediate portion 126b. In some embodiments, each aperture has a minimum diameter of 25 mils, 30 mils, 35 mils, or 40 mils or more. A typical showerhead has apertures with a diameter of less than 15 mils. The showerhead 120 maintains structural integrity despite having more apertures and each aperture being larger than in conventional showerheads.

[0026]

[0028] The showerhead 120 can be made of any suitable material known to those skilled in the art. In some embodiments, the showerhead 120 is made of a conductive material that can be used to generate plasma within the interior 109 of the processing chamber 100 for semiconductor manufacturing. In some embodiments, the showerhead 120 comprises stainless steel.

[0027]

[0029] The showerhead 120 of some embodiments has increased conductance compared to conventional showerheads. The increased conductance enables more rapid exchange of gas within the interior 109 of the processing chamber 100 for semiconductor manufacturing. The number and size of the apertures, as well as the thickness of the showerhead 120, affect the overall conductance. In some embodiments, the showerhead 120 has a conductance of 50 liters per second, 55 liters per second, 60 liters per second, 65 liters per second, or 70 liters per second or more. For comparison, a typical showerhead has a conductance of less than 10 liters per second.

[0028]

[0030] As the thickness of the showerhead decreases, the number and size of the apertures increase, which affects the operating temperature of the showerhead 120. In some embodiments, the showerhead 120 has an operating temperature of up to 300°C, 275°C, 250°C, 225°C, or 200°C.

[0029]

[0031] The conductance of the showerhead 120 directly affects the time taken to exchange the gas in the process chamber. The amount of time required to fully saturate the processing region 135 of the processing chamber 100 for semiconductor manufacturing is referred to as the gas saturation time. A shorter gas saturation time means that the processing region 135 can be saturated more quickly and purged more rapidly. The gas saturation time may also be affected by the volume of the processing region 135. In some embodiments, the processing chamber 100 for semiconductor manufacturing has a gas saturation time of 0.25 seconds or less, 0.2 seconds or less, 0.15 seconds or less, or 0.1 seconds or less. For comparison, a typical atomic layer deposition processing chamber has a gas saturation time of about 1 second.

[0030]

[0032] In some embodiments, the shower head 120 has an outer flange 128 that rests on a support ring 110. One or more embodiments of the present disclosure include an RF isolator 140 on which the shower head 120 rests. In some embodiments, the RF isolator 140 is located on the support ring 110, as shown in the figure, and isolates the shower head 120 from direct contact with the support ring 110. In the illustrated embodiments, the outer flange 128 of the shower head 120 is in direct contact with the RF isolator 140. As shown in Figure 2, the shower head 120 is connected to the support ring 110 via the RF isolator 140 using any suitable fastener 129 known to those skilled in the art. Suitable fasteners 129 include, but are not limited to, bolts. Suitable fasteners are electrically insulated by either being made of a non-conductive material or including a non-conductive sleeve (not shown) to ensure that there is no electrical short circuit between the shower head 120 and the support ring 110.

[0031]

[0033] To prevent gas leaks, one or more O-rings 142 may be placed between the showerhead 120 and the RF isolator 140, and / or between the RF isolator 140 and the support ring 110. A suitable O-ring 142 includes any material that can form an airtight seal between the components. In some embodiments, the suitable O-ring 142 is RF insulated to further prevent electrical short circuits between the showerhead 120 and the support ring 110.

[0032]

[0034] The RF isolator 140 can be made of any suitable material that can electrically insulate the shower head 120 from the support ring 110. In some embodiments, the RF isolator 140 includes a ceramic material. In some embodiments, the ceramic includes aluminum oxide.

[0033]

[0035] The thickness of the RF isolator 140 may affect its ability to properly electrically isolate the showerhead 120 from the support ring 110. In some embodiments, the RF isolator 140 has a thickness ranging from 0.1 inches to 1 inch, or from 0.15 inches to 0.75 inches, or from 0.25 inches to 0.5 inches.

[0034]

[0036] The gas funnel 130 is positioned on the shower head 120. The gas funnel 130 has a front surface 132 and a back surface 134. An opening 136 extends through the center of the gas funnel 130. In some embodiments, the front surface 132 has a concave inner portion 132a and an outer portion 132b. The outer portion 132b of the front surface 132 of the gas funnel 130 is in contact with the back surface 124 of the shower head 120. A gas plenum 137 is formed between the back surface 124 of the shower head 120 and the concave inner portion 132a of the front surface 132 of the gas funnel 130.

[0035]

[0037] The cap insert 150 is positioned on the gas funnel 130. The cap insert 150 has an upper part 152 and a lower part 154. A cavity 151 extends through the length of the cap insert 150 from the upper surface 155 to the bottom surface 157.

[0036]

[0038] As shown in Figure 1, the shape of the cavity 151 in some embodiments varies along the length of the cavity 151. In the illustrated embodiments, the cavity 151 in the upper part 152 of the cap insert 150 is generally cylindrical. Multiple openings 159 connect the upper part of the generally cylindrical portion of the cavity 151 to the top surface 155. In some embodiments, the upper part 152 of the cavity 151 provides an injection area for lateral injection gas, which forms a vortex within the cavity 151 and flows into the gas funnel 130. The length of the cavity 151 in the upper part 152 can be any suitable length.

[0037]

[0039] The lower cavity 151 of the cap insert 150 has a frustoconical shape that connects the upper cavity 151 to the base 157. The angle and length of the frustoconical portion of the cavity 151 may be any appropriate angle and / or length.

[0038]

[0040] The opening 156 of the bottom surface 157 of the cap insert 150 is aligned with the opening 136 of the gas funnel 130. In some embodiments, the opening 156 of the bottom surface 157 is sized to provide fluid communication between the cap insert 150 and the gas funnel 130 without introducing turbulence into the gas flowing from the cap insert 150 to the gas funnel 130.

[0039]

[0041] The cap insert 150 has at least one gas inlet 158 ​​on its upper part 152. In the illustrated embodiment, there are three gas inlets 158 on the upper part 152, which are configured to provide a gas flow to a cavity 151 formed along the length of the cap insert 150. In some embodiments, there are two, three, four, five, six, seven, eight, nine, or ten gas inlets 158. In some embodiments, there are two, three, four, five, ten, fifteen, or twenty or more gas inlets 158 on the upper part 152 of the cap insert 150 that connect the lateral gas inlets 153 to the cavity 151. The cap insert 150 can be manufactured by any suitable technique and from any suitable material known to those skilled in the art.

[0040]

[0042] In some embodiments, the cap insert 150 has an inlet 161 on its upper surface 155. The inlet 161 is in fluid communication with a cavity 151 in the upper part 152 of the cap insert 150. In the illustrated embodiment, the inlet 161 on the upper surface 155 is in fluid communication with the cavity 151 in the upper part 152 of the cap insert 150 through a plurality of openings 159.

[0041]

[0043] In some embodiments, as shown in Figure 1, a remote plasma source (RPS) 165 is connected to the cap insert 150. The RPS 165 causes plasma to flow into the cavity 151 through an injection port 161 on the upper surface 155 of the cap insert 150.

[0042]

[0044] The cap housing 160 is positioned around the cap insert 150. The cap housing 160 is in contact with the back surface 134 of the gas funnel 130. The cap housing 160 includes a non-conductive material to insulate the cap insert 150 from electrical interference or contact with the RF feed 180 that contacts the shower head 120. In some embodiments, the cap housing 160 includes ceramic. In some embodiments, the ceramic includes aluminum oxide.

[0043]

[0045] In some embodiments, the cap housing 160 has at least one opening that fluidly communicates with a lateral gas inlet 153 and a cavity 151 in the cap insert 150. The at least one opening (not shown) allows the gas flow from the lateral gas inlet 153 to pass through the cap housing 160 and enter the cavity 151 in the cap insert 150. In some embodiments, the lateral gas inlet 153 is connected to the cap housing 160 by at least one O-ring 162.

[0044]

[0046] The RF (radio frequency) feed 180 is in contact with the showerhead 120. In some embodiments, the RF feed 180 includes coaxial connections between an inner conductor 182 and an outer conductor 184, separated by an insulating layer 183. This will be well known to those skilled in the art. The coaxial connections are schematically shown in Figure 3 with the inner conductor connected to the showerhead 120. The outer conductor 184 may be connected to any part of a processing chamber that may be used to generate plasma. In the illustrated embodiment, the outer conductor 184 is connected to a substrate support 210. Those skilled in the art will recognize that the connections between the inner conductor 182 and the outer conductor 184 may be modified or reversed, and that the illustrated embodiments should not be considered to limit the scope of this disclosure.

[0045]

[0047] In some embodiments, the RF feed 180 is connected to and electrically communicates with the shower head 120. In some embodiments, an RF gasket 188 is positioned between the gas funnel 130 and the shower head 120. In some embodiments, the RF gasket 188 is positioned outside the O-ring 189 that forms an air seal around the gas plenum 137.

[0046]

[0048] In some embodiments, to prevent RF conductivity between the gas funnel 130 and the shower head 120, there is no direct contact between the gas funnel 130 and the shower head 120 and the outside of the RF gasket 188.

[0047]

[0049] The RF gasket 188 may be made of any suitable material and may have any suitable cross-sectional shape. In some embodiments, the RF gasket 188 includes ceramic. In some embodiments, the ceramic includes aluminum oxide.

[0048]

[0050] Some embodiments of the semiconductor manufacturing processing chamber 100 include a substrate support 210 inside the chamber body 102 109. The substrate support 210 has a support surface 212 positioned at a distance from the showerhead 120 to form a processing area 135. The substrate support 210 includes support posts 215. The substrate support 210 has a support surface 212 configured to support a semiconductor wafer 220. The support surface 212 is positioned at a distance from the chamber lid 108. The top surface 222 of the semiconductor wafer 220 faces the chamber lid 108 so that the top surface 222 is exposed to the processing gas in the processing area 135.

[0049]

[0051] In some embodiments, the substrate support 210 includes a heater 214. The heater 214 can be made of any suitable material known to those skilled in the art. In some embodiments, the heater 214 includes electrodes embedded within the substrate support 210. In some embodiments, a power supply (not shown) is connected to the electrodes, and the power applied to the electrodes causes resistive heating within the heater 214, raising the temperature of the substrate support 210 and the semiconductor wafer 220.

[0050]

[0052] In some embodiments, the substrate support 210 further comprises an electrostatic chuck (ESC) (not shown). In embodiments having an ESC, at least one power supply is connected to at least one electrode in the ESC and configured to polarize the electrode of the ESC to generate electrostatics that can chuck the semiconductor wafer 220 during processing. Those skilled in the art will be familiar with the design and construction of electrostatic chucks.

[0051]

[0053] In some embodiments, as shown in the schematic diagram of electrical connections in Figure 3, the semiconductor manufacturing processing chamber 100 includes an RF feed 180 configured to have an RF supply path 186 to a showerhead 120 and an RF return path 187 from a substrate support 210. The RF supply path and RF return path can be connected to the showerhead 120 and the substrate support 210 in any order. For example, in some embodiments, the RF supply path 186 is connected to the substrate support 210 and the RF return path 187 is connected to the showerhead 120. The RF supply path 186 and the RF return path 187 are separated by an RF isolator 140.

[0052]

[0054] Some embodiments of the semiconductor manufacturing processing chamber 100 further include at least one controller 190. In some embodiments, at least one controller 190 is connected to an RF feed 180 or an RF power supply 185.

[0053]

[0055] In some embodiments, as shown in Figure 1, the controller 190 is connected to the semiconductor manufacturing processing chamber 100, the RF feed 180 via the RF power supply 185, the heater 214 of the substrate support 210, the lateral gas inlet 153 via one or more control valves, or one or more of these components. For example, the system controller 190 can control the operation of the semiconductor manufacturing processing chamber 100, actuators, valves, flow controllers, power supplies, etc., and any monitoring components known to those skilled in the art that are included in the system. During operation, the system controller 190 may enable data acquisition and feedback from the semiconductor manufacturing processing chamber 100 to adjust system performance.

[0054]

[0056] The system controller 190 generally includes a central processing unit (CPU) 192, memory 194, and support circuitry 196. The CPU 192 may be one of any form of general-purpose processor available for use in an industrial environment. The memory 194, or non-temporary computer-readable medium, is accessible by the CPU 192 and may be one or more memories such as random access memory (RAM), read-only memory (ROM), floppy disks, hard disks, or other forms of local or remote digital storage. The support circuitry 196 is connected to the CPU 192 and may include a cache, clock circuitry, input / output subsystems, power supply, etc. Various methods disclosed herein can generally be implemented by the CPU 192 executing computer instruction code stored, for example, as software routines in memory 194 (or memory of a particular process chamber) under the control of the CPU 192. Once the computer instruction code is executed by the CPU 192, the CPU 192 controls the chamber or valve to execute the process in various ways.

[0055]

[0057] In some embodiments, the controller 190 has one or more predetermined configurations for controlling components of the semiconductor manufacturing processing chamber 100. In some embodiments, the system controller 190 has a first configuration for supplying RF power to the showerhead 120 and the substrate support 210 to generate plasma within the processing area 135.

[0056]

[0058] Throughout this Specification, any reference to “one embodiment,” “a particular embodiment,” “one or more embodiments,” or “embodiment” means that a particular feature, structure, material, or property described in relation to an embodiment is included in at least one embodiment of this Disclosure. Therefore, any other reference to “in one or more embodiments,” “a particular embodiment,” “in one embodiment,” or “in an embodiment” in various parts of this Specification does not necessarily refer to the same embodiment of this Disclosure. Furthermore, a particular feature, structure, material, or property may be combined in any suitable manner in one or more embodiments.

[0057]

[0059] While the disclosures herein have been described with reference to specific embodiments, those skilled in the art will understand that the described embodiments are merely illustrative of the principles and applications of the disclosure. It will be obvious to those skilled in the art that various modifications and alterations can be made to the methods and apparatus of the disclosure without departing from the essence and scope of the disclosure. Accordingly, the disclosure may include modifications and alterations that fall within the scope of the appended claims and their equivalents.

Claims

1. A semiconductor manufacturing processing chamber, A chamber body having side walls, a bottom, and a lid surrounding the interior, The support ring of the side wall, The RF isolator on the support ring, A shower head on the ceramic isolator, having a front and back surface defining the thickness of the shower head, and a plurality of openings extending through the thickness of the shower head, A gas funnel on the shower head, having a front surface and a back surface having an opening that penetrates the center of the gas funnel, wherein the front surface has a concave inner portion and an outer portion, and the outer portion of the front surface of the gas funnel contacts the back surface of the shower head, forming a gas plenum between the back surface of the shower head and the inner portion of the front surface of the gas funnel at the concave front surface. A cap insert on the gas funnel, having an upper and a lower part, the opening on the bottom surface of the cap insert being aligned with the opening in the gas funnel, and having at least one gas inlet in the upper part, The cap housing surrounding the cap insert, which contacts the back surface of the gas funnel, A processing chamber comprising an RF feed that contacts the aforementioned shower head.

2. The processing chamber according to claim 1, further comprising an RF gasket between the gas funnel and the shower head.

3. The processing chamber according to claim 2, wherein, in order to prevent RF conduction between the gas funnel and the shower head, the gas funnel and the shower head do not come into direct contact outside the RF gasket.

4. The processing chamber according to claim 2, wherein the RF gasket includes ceramic.

5. The processing chamber according to claim 4, wherein the ceramic comprises aluminum oxide.

6. The processing chamber according to claim 2, wherein the RF isolator includes ceramic.

7. The processing chamber according to claim 6, wherein the ceramic comprises aluminum oxide.

8. The processing chamber according to claim 2, wherein the cap housing includes ceramic.

9. The processing chamber according to claim 8, wherein the ceramic comprises aluminum oxide.

10. The processing chamber according to claim 2, wherein the cap insert has an injection port on the upper surface of the cap insert, and the injection port is in fluid communication with a cavity in the upper part of the cap insert.

11. The processing chamber according to claim 10, further comprising a remote plasma source connected to the cap insert for introducing plasma into the cavity through the injection port on the upper surface of the cap insert.

12. The processing chamber according to claim 10, wherein the cap insert has at least one lateral gas inlet on its upper part, and the at least one lateral gas inlet is in fluid communication with the cavity.

13. The processing chamber according to claim 2, further comprising a substrate support inside the chamber body, wherein the substrate support has a support surface positioned at a certain distance from the shower head to form a processing area.

14. The processing chamber according to claim 13, wherein the RF feed is configured to have an RF supply path to the showerhead and an RF return path from the substrate support, and the RF supply path and the RF return path are separated by the RF isolator.

15. The processing chamber according to claim 14, further comprising at least one controller connected to the RF feed.

16. The processing chamber according to claim 15, wherein the at least one controller has a first configuration for supplying RF power across the showerhead and the substrate support to generate plasma within the processing area.

17. The processing chamber according to claim 2, wherein the shower head has at least 2,000 openings, and each opening has a minimum diameter of 30 mils or more.

18. The processing chamber according to claim 17, wherein the shower head has a conductance of more than 50 liters / second and a thickness of less than 0.5 inches.

19. The processing chamber according to claim 18, wherein the shower head has an operating temperature of 250°C or less.

20. The processing chamber according to claim 18, wherein the processing area has a gas saturation time of 0.25 seconds or less.

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