Substrate processing apparatus and substrate processing method
Patent Information
- Application Number
- JP2025044100
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2025-03-18
- Publication Date
- 2026-10-30
- Estimated Expiration
- 2045-03-18
Smart Images

Figure 0007943929000001 
Figure 0007943929000002 
Figure 0007943929000003
Abstract
Description
Technical Field
[0001] The present invention relates to a substrate processing apparatus that performs predetermined processing on various substrates such as semiconductor substrates, substrates for FPDs (Flat Panel Displays) including liquid crystal display substrates and organic EL (Electroluminescence) display substrates, glass substrates for photomasks, and substrates for optical disks.
Background Art
[0002] The substrate processing apparatus of Patent Document 1 includes a tower in which substrate processing chambers are stacked. The substrate processing chambers are configured to process horizontally oriented substrates one by one. By providing a plurality of substrate processing chambers, the substrate processing capacity of the substrate processing apparatus is improved. The tower is provided with a vertical exhaust pipe. The vertical exhaust pipe is configured to exhaust gas inside the substrate processing chamber.
Prior Art Literature
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] However, according to the conventional configuration, it is necessary to provide a vertical exhaust pipe for each processing unit that processes horizontally oriented substrates one by one. That is, the conventional configuration has insufficient consideration from the perspective of footprint.
[0005] The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus that can reduce the footprint.
Means for Solving the Problems
[0006] In order to solve the above problems, the present invention adopts the following configuration. In other words, the substrate processing apparatus of the present invention is In a substrate processing apparatus for processing substrates, A first processing chamber housing a first processing unit that performs the first processing on a substrate, A second processing chamber housing a second processing unit that performs a second processing on the substrate, Intake and exhaust pipes extending vertically, A first branch pipe connecting the first processing chamber and the intake / exhaust pipe, The system comprises a second branch pipe connecting the second processing chamber and the intake / exhaust pipe, The intake and exhaust pipes, the first processing chamber, and the second processing chamber are arranged in a horizontal line in that order. It is characterized by the following:
[0007] [Function and Effects] The substrate processing apparatus described above comprises a first processing chamber housing a first processing unit that performs a first processing on a substrate, a second processing chamber housing a second processing unit that performs a second processing on a substrate, an intake and exhaust pipe extending vertically, a first branch pipe connecting the first processing chamber and the intake and exhaust pipe, and a second branch pipe connecting the second processing chamber and the intake and exhaust pipe. The intake and exhaust pipe, the first processing chamber, and the second processing chamber are arranged in a horizontal line in that order. With this configuration, the substrate processing apparatus can be constructed by providing only one intake and exhaust pipe for two processing units arranged horizontally. Therefore, the substrate processing apparatus of the present invention does not require an intake and exhaust pipe for each processing unit, resulting in a small footprint.
[0008] Furthermore, in the above-mentioned substrate processing apparatus, The casing and Preferably, the housing includes a flat partition wall that divides the housing into a first processing chamber and a second processing chamber.
[0009] [Function and Effects] The above-described substrate processing apparatus comprises a housing and a flat partition wall that divides the housing into a first processing chamber and a second processing chamber. With this configuration, the two processing units can be placed as close together as possible, thus providing a substrate processing apparatus with a small footprint.
[0010] Furthermore, in the above-mentioned substrate processing apparatus, Preferably, the second branch pipe passes through the inside of the first processing chamber and is connected to the intake and exhaust pipe.
[0011] [Function / Effect] In the substrate processing apparatus described above, the second branch pipe passes through the inside of the first processing chamber and is connected to the intake / exhaust pipe. With this configuration, the apparatus does not become larger simply by adding the second branch pipe, because the second branch pipe is built into the first processing chamber.
[0012] Furthermore, in the above-mentioned substrate processing apparatus, The second branch pipe is preferably provided on the floor surface of the first processing chamber.
[0013] [Function / Effect] If the second branch pipe is installed on the floor of the first processing chamber, as in the substrate processing apparatus described above, the second branch pipe will not obstruct the transport of the substrate.
[0014] Furthermore, in the above-mentioned substrate processing apparatus, An auxiliary robot is provided inside the first processing chamber to transport the substrate from the first processing chamber to the second processing chamber through a passage opening in the partition wall. Preferably, the second branch pipe is located on the opposite side of the auxiliary robot from the imaginary straight line connecting the first processing unit and the second processing unit.
[0015] [Function and Effects] According to the substrate processing apparatus described above, an auxiliary robot is provided inside the first processing chamber to transport substrates from the first processing chamber to the second processing chamber through a passage provided in the partition wall, and the second branch pipe is provided on the opposite side from the auxiliary robot, with a virtual straight line connecting the first processing chamber and the second processing chamber. With this configuration, the second branch pipe does not interfere with the maintenance of the auxiliary robot.
[0016] Furthermore, in the above-mentioned substrate processing apparatus, A central robot for transporting the substrate into the first processing chamber is provided adjacent to the housing, Preferably, the second branch pipe is provided inside the first processing chamber on the side where the central robot is located.
[0017] [Operation and Effect] According to the substrate processing apparatus described above, a center robot for loading a substrate into the first processing chamber is provided adjacent to the housing, and the second branch pipe is provided on the side where the center robot is arranged inside the first processing chamber. With this configuration, it is no longer necessary to provide the second branch pipe on the side opposite to the side where the center robot is arranged in the first processing chamber. The substrate processing apparatus of the present invention can secure a maintenance area for the first processing chamber on this opposite side.
[0018] Further, in the substrate processing apparatus described above, It is preferable that the housings are stacked in the vertical direction.
[0019] [Operation and Effect] According to the substrate processing apparatus described above, the housings are stacked in the vertical direction. With this configuration, the throughput of the substrate processing apparatus is improved.
[0020] Further, in the substrate processing apparatus described above, a first valve that changes the flow rate of the gas flowing through the first branch pipe, a second valve that changes the flow rate of the gas flowing through the second branch pipe, and a control unit that controls the first valve and the second valve, the control unit controls the first valve and the second valve such that when the first processing unit executes the first processing, the flow rate of the gas flowing through the first branch pipe is larger than the flow rate of the gas flowing through the second branch pipe, and it is preferable that when the second processing unit executes the second processing, the control unit controls the first valve and the second valve such that the flow rate of the gas flowing through the second branch pipe is larger than the flow rate of the gas flowing through the first branch pipe.
[0021] [Operation and Effects] According to the substrate processing apparatus described above, when the first processing unit performs the first processing, the first and second valves are controlled so that the flow rate of gas flowing through the first branch pipe is greater than the flow rate of gas flowing through the second branch pipe. When the second processing unit performs the second processing, the first and second valves are controlled so that the flow rate of gas flowing through the second branch pipe is greater than the flow rate of gas flowing through the first branch pipe. With this configuration, a large airflow is generated in the processing unit being used. This airflow makes it possible to perform substrate processing while removing particles suspended in the gas. Furthermore, only a small airflow is generated in the processing unit that is not being used. This airflow is of little importance for substrate processing. Thus, according to the present invention, substrate processing can be performed while conserving the gas intake capacity of the intake and exhaust pipes as much as possible.
[0022] Furthermore, in the above-mentioned substrate processing apparatus, The casing and The partition wall separating the first processing chamber and the second processing chamber in the housing is, A pass-through opening for the circuit board, It includes a separation shutter for opening and closing the aforementioned passage opening, The control unit, It is preferable to control the first and second valves so that when the separation shutter is in the open state and the substrate is passed through the passage opening, gas flows from the second processing chamber to the first processing chamber through the passage opening.
[0023] [Function and Effects] According to the substrate processing apparatus described above, the housing and the partition wall separating the housing into a first processing chamber and a second processing chamber are equipped with a passage for the substrate to pass through and a separation shutter for opening and closing the passage. When the separation shutter is in the open position and the substrate passes through the passage, the first and second valves are controlled so that gas flows from the second processing chamber to the first processing chamber through the passage. With this configuration, substrate processing can be performed while maintaining the cleanliness of the second processing chamber. By generating an airflow from the second processing chamber to the first processing chamber through the passage, particles generated in the first processing chamber cannot enter the second processing chamber.
[0024] Furthermore, in the above-mentioned substrate processing apparatus, The enclosure surrounding the first processing chamber is provided with a first opening for transporting a substrate into the first processing chamber. The control unit, When a substrate is loaded into the first opening, it is preferable to control the first valve so that gas flows from the outside towards the first processing chamber through the first opening.
[0025] [Function and Effects] According to the substrate processing apparatus described above, the housing surrounding the first processing chamber is provided with a first opening for loading a substrate into the first processing chamber. When a substrate is loaded into the first opening, a first valve is controlled so that gas flows from the outside towards the first processing chamber through the first opening. With this configuration, particles generated in the first processing chamber will not dissipate to the outside of the housing through the first opening.
[0026] Furthermore, in the plate processing apparatus described above, The enclosure surrounding the second processing chamber is provided with a second opening for removing the substrate from the second processing chamber. The control unit, When a substrate is loaded into the second opening, the second valve is controlled so that gas flows from the outside towards the second processing chamber through the second opening. A substrate processing apparatus characterized by the following:
[0027] [Function and Effects] According to the substrate processing apparatus described above, the housing surrounding the second processing chamber is provided with a second opening for loading substrates into the second processing chamber. When a substrate is loaded into the second opening, a second valve is controlled so that gas flows from the outside towards the second processing chamber through the second opening. With this configuration, particles generated in the second processing chamber will not dissipate to the outside of the housing through the second opening.
[0028] This specification also discloses the following substrate processing methods. In other words, the substrate processing method according to the present invention is A substrate processing method in a substrate processing apparatus comprising a first processing chamber housing a first processing unit for performing a first processing on a substrate, a second processing chamber housing a second processing unit for performing a second processing on a substrate, and intake and exhaust pipes for drawing in and exhausting gas from the first and second processing chambers, When substrate processing is performed in the first processing chamber, a first exhaust process is performed in which the exhaust flow rate of the first processing chamber is made greater than the exhaust flow rate of the second processing chamber, The system includes a second exhaust process in which, when substrate processing is performed in the second processing chamber, the exhaust flow rate of the second processing chamber is increased to be greater than the exhaust flow rate of the first processing chamber. It is characterized by the following:
[0029] [Effects] According to the substrate processing method described above, a large airflow is generated in the processing chamber being used. This airflow makes it possible to process the substrate while removing particles suspended in the gas. Furthermore, only a small airflow is generated in the unused processing chamber. This airflow is of little importance to the substrate processing. Thus, according to the present invention, substrate processing can be performed while conserving the gas intake capacity of the intake and exhaust pipes as much as possible.
[0030] Furthermore, in the substrate processing method described above, Preferably, the system includes a third exhaust process that adjusts the exhaust volume of the first and second processing chambers to generate an airflow from the second processing chamber toward the first processing chamber when the substrate is transported from the first processing chamber to the second processing chamber.
[0031] [Effects] According to the substrate processing method described above, substrate processing can be performed while maintaining the cleanliness of the second processing chamber. By generating an airflow from the second processing chamber to the first processing chamber through the passage opening, particles generated in the first processing chamber will not enter the second processing chamber. [Effects of the Invention]
[0032] According to the present invention, a substrate processing device with a small footprint can be provided. [Brief explanation of the drawing]
[0033] [Figure 1] This is a plan view illustrating the overall configuration of the substrate processing apparatus according to the embodiment. [Figure 2] This is a plan view illustrating the substrate processing chamber according to the embodiment. [Figure 3] This is a cross-sectional view illustrating the configuration of the first processing chamber according to the embodiment. [Figure 4] This is a cross-sectional view illustrating the configuration of the second processing chamber according to the embodiment. [Figure 5] This is a plan view illustrating the configuration of the auxiliary robot according to the embodiment. [Figure 6] This is a plan view illustrating the configuration of the auxiliary robot according to the embodiment. [Figure 7] This is a plan view illustrating the configuration of the auxiliary robot according to the embodiment. [Figure 8] This is a plan view illustrating the configuration of the auxiliary robot according to the embodiment. [Figure 9] This is a plan view illustrating the configuration of the auxiliary robot according to the embodiment. [Figure 10] This is a plan view illustrating the operation of the auxiliary robot according to the embodiment. [Figure 11] This is a plan view illustrating the operation of the auxiliary robot according to the embodiment. [Figure 12] This is a plan view illustrating the operation of the auxiliary robot according to the embodiment. [Figure 13] This is a plan view illustrating the configuration of the hand of the auxiliary robot according to the embodiment. [Figure 14] This is a perspective view illustrating the vertical movement mechanism of an auxiliary robot according to an embodiment. [Figure 15] This is a plan view illustrating the configuration of the lower hand of the center robot according to the embodiment. [Figure 16] This is a side view illustrating the stacking state of the substrate processing chamber according to the embodiment. [Figure 17] This is a flowchart illustrating the substrate flow in the embodiment. [Figure 18] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 19]This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 20] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 21] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 22] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 23] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 24] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 25] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 26] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 27] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 28] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 29] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 30] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 31] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 32] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 33] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 34] This is a cross-sectional view illustrating the flow of the substrate according to the embodiment. [Figure 35] This is a perspective view illustrating the configuration of the support member in the embodiment. [Figure 36] This is a perspective view illustrating the configuration of the support member in the embodiment. [Figure 37] This is a flowchart illustrating the substrate acquisition operation in the embodiment. [Figure 38] This is a flowchart illustrating the substrate mounting operation in the embodiment. [Figure 39]This is a cross-sectional view illustrating the substrate acquisition operation according to the embodiment. [Figure 40] This is a cross-sectional view illustrating the substrate acquisition operation according to the embodiment. [Figure 41] This is a cross-sectional view illustrating the substrate acquisition operation according to the embodiment. [Figure 42] This is a cross-sectional view illustrating the substrate acquisition operation according to the embodiment. [Figure 43] This is a cross-sectional view illustrating the substrate acquisition operation according to the embodiment. [Figure 44] This is a cross-sectional view illustrating the substrate acquisition operation according to the embodiment. [Figure 45] This is a cross-sectional view illustrating the substrate acquisition operation according to the embodiment. [Figure 46] This is a cross-sectional view illustrating the substrate mounting operation according to the embodiment. [Figure 47] This is a cross-sectional view illustrating the substrate mounting operation according to the embodiment. [Figure 48] This is a cross-sectional view illustrating the substrate mounting operation according to the embodiment. [Figure 49] This is a cross-sectional view illustrating the substrate mounting operation according to the embodiment. [Figure 50] This is a cross-sectional view illustrating the substrate mounting operation according to the embodiment. [Figure 51] This is a cross-sectional view illustrating the substrate mounting operation according to the embodiment. [Figure 52] This is a cross-sectional view illustrating the substrate mounting operation according to the embodiment. [Figure 53] This is a side view illustrating the intake and exhaust pipes according to the embodiment. [Figure 54] This is a perspective view illustrating a branch pipe related to the example. [Figure 55] This is a perspective view illustrating the rectification system according to the embodiment. [Figure 56] This is a cross-sectional view illustrating the airflow generated by the rectification system according to the embodiment. [Figure 57] This is a perspective view illustrating the airflow generated by the rectification system according to the embodiment. [Figure 58] This is a cross-sectional view illustrating the airflow generated by the rectification system according to the embodiment. [Figure 59] This is a cross-sectional view illustrating the airflow generated by the rectification system according to the embodiment. [Figure 60] This is a perspective view illustrating the airflow generated by the rectification system according to the embodiment. [Figure 61] This is a schematic diagram illustrating the operation of the rectifier system according to the embodiment. [Figure 62] This is a flowchart illustrating the exhaust method in the example. [Modes for carrying out the invention]
[0034] Embodiments of the present invention will be described below with reference to the drawings. The substrate processing apparatus according to the present invention is configured to process substrates in a horizontal position. The substrate processing apparatus comprises a first processing chamber and a second processing chamber formed by partitioning the housing of the substrate processing chamber with a partition wall. A first processing is performed in the first processing chamber. A second processing is performed on the substrate after the first processing is completed. By separating the substrate processing between the first and second processing chambers, it is possible to change the mechanism for substrate processing between the first and second processing chambers. The substrate processing apparatus of the present invention is capable of a wider variety of substrate processing compared to conventional substrate processing apparatuses. [Examples]
[0035] <1. Overall Structure> The overall configuration of the substrate processing apparatus 1 will be explained with reference to Figures 1 and 2. Figure 1 is a plan view illustrating the overall configuration of the substrate processing apparatus according to this example. Figure 2 is a plan view illustrating the substrate processing chamber according to this example. As shown in Figure 1, the substrate processing apparatus 1 of this example is divided into multiple blocks. The substrate processing apparatus 1 of this example comprises an indexer block 3 and a substrate processing block 5. The indexer block 3 and the substrate processing block 5 are arranged in the X direction (front-to-back direction). The X direction corresponds to the horizontal direction in this invention.
[0036] In this example, the Z direction is the vertical direction, and the Y direction is the left-right direction, perpendicular to both the X and Z directions.
[0037] The indexer block 3 is equipped with a load port 4 on which a carrier C is placed, which stores multiple substrates W in a horizontal position with predetermined intervals between them in the vertical direction. The load port 4 is configured to protrude from the outer wall of the indexer block 3, which extends in the width direction (Y direction). When a carrier C containing unprocessed substrates W is placed on the load port 4, the substrate processing device 1 removes the substrates W from the carrier C and takes them into the device. An empty carrier C remains in the load port 4. After performing a predetermined process on the substrates W, the substrate processing device 1 returns the processed substrates W to the empty carrier C placed on the load port 4. In this way, the substrates W stored in the carrier C are returned to the original carrier C after being processed by the substrate processing device 1.
[0038] The load ports 4 are arranged in the Y direction on the outer wall of the indexer block 3. Therefore, the substrate processing apparatus 1 in this example can load multiple carriers C onto the load ports 4 at once.
[0039] Carrier C is a container for housing horizontally positioned substrates W arranged vertically. An example of a carrier C is a sealed FOUP (Front Opening Unify Pod). In this invention, an open container may be used as carrier C. Carrier C can, for example, house 25 substrates arranged at full pitch (1 cm intervals).
[0040] The indexer block 3 is equipped with an indexer robot IR. The indexer robot IR is equipped with a batch-receiving hand 71 that can simultaneously receive 25 substrates W stored in the carrier C. The indexer robot IR can rotate the batch-receiving hand 71 around the Z-axis. Therefore, the indexer robot IR can orient the batch-receiving hand 71 toward the load port 4 or toward the substrate processing block 5.
[0041] In addition, the indexer robot IR is movable in the Y direction. This configuration allows the indexer robot IR to access any of the multiple load ports 4 that are aligned in the Y direction.
[0042] Between the indexer block 3 and the substrate processing block 5, there is a path 72 for transferring substrates W between the blocks. The path 72 is a temporary storage area for substrates W, where multiple substrates W can be stacked in the Z direction. The indexer robot IR places the substrates W acquired by the batch hand 71 onto the path 72. In this way, 25 substrates W are stacked and placed on the path 72.
[0043] The substrate processing block 5 is equipped with a center robot CR that can move in the X direction. The center robot CR can transport substrates W one by one in a horizontal position from the aforementioned path 72. The center robot CR is housed in a region B that extends in the X direction. The path 72 is located in front of region B. The center robot CR transfers substrates to and from the substrate processing chamber 10. The center robot CR is equipped with a hand 73 that supports the substrate W, and the hand 73 approaches the substrate W from below when supporting it. The hand 73 corresponds to the lower hand of the present invention. The center robot CR is provided adjacent to the substrate processing chamber 10.
[0044] On the left and right sides of region B are substrate processing chambers 10 for performing predetermined processing on the substrate W. The central robot CR can transport the substrate W into the substrate processing chamber 10 through a first opening 31 provided in the substrate processing chamber 10. As shown in Figure 2, the first opening 31 is provided in the housing 9 surrounding the first processing chamber R1, and is configured for the central robot CR to transport the substrate W into the first processing chamber R1. The first opening 31 is perpendicular to the Y direction.
[0045] Similarly, the central robot CR can unload the substrate W from the substrate processing chamber 10 through a second opening 32 provided in the substrate processing chamber 10. The second opening 32 is provided in the housing 9 surrounding the second processing chamber R2, and is configured to allow the central robot CR to unload the substrate W from the second processing chamber R2. The second opening 32 is perpendicular to the Y direction.
[0046] The first opening 31 and the second opening 32 are arranged in the X direction within the substrate processing chamber 10. Therefore, the substrate W moves from the position of the first opening 31 to the position of the second opening 32 within the substrate processing chamber 10. This movement is performed by an auxiliary robot installed inside the substrate processing chamber 10. The auxiliary robot will be described later.
[0047] The first opening 31 is provided with a first shutter S1 that can move up and down, and is displaceable between a closed state that closes the first opening 31 and an open state that opens the first opening 31. The first shutter S1 closes during the first processing to separate the first processing chamber R1 from the outside air.
[0048] Similarly, the second opening 32 is provided with a second shutter S2 that is movable up and down, and is displaceable between a closed state that closes the second opening 32 and an open state that opens the second opening 32. The second shutter S2 closes during the second process, separating the second processing chamber R2 from the outside air.
[0049] Various components to support the substrate processing in the substrate processing chamber 10 are provided at the front and back of the substrate processing chamber 10. The exhaust mechanism 6 and the liquid supply mechanism 7 are provided so as to sandwich the substrate processing chamber 10 from the front and back. The exhaust mechanism 6 is provided for the purpose of sucking out gas from inside the substrate processing chamber 10, thereby controlling the airflow inside the substrate processing chamber 10. The exhaust mechanism 6 is configured to exhaust gas from the first processing chamber R1 and the second processing chamber R2.
[0050] The liquid supply mechanism 7 is configured to supply the liquid used for substrate processing in the substrate processing chamber 10. The liquid supply mechanism 7 is equipped with a pressure gauge for liquid supply, a pump to pressurize the liquid, a valve to control the amount of liquid discharged, and a heater to heat the liquid. The liquid supply mechanism 7 is configured to supply liquid to the first processing chamber R1 and the second processing chamber R2.
[0051] The exhaust mechanism 6, the first processing chamber R1, the second processing chamber R2, and the liquid supply mechanism 7 are arranged in a line in this order.
[0052] The electrical circuit 8 is located near the exhaust mechanism 6. The electrical circuit 8 is mainly configured to supply power to the substrate processing chamber 10. The electrical circuit 8 is located at a distance from the fluid supply mechanism 7. This configuration ensures that the fluid supply mechanism 7 is positioned adjacent to the substrate processing chamber 10.
[0053] The control unit 101 is composed of, for example, a CPU (Central Processing Unit). The control unit 101 is configured to perform various controls on the indexer robot IR, the center robot CR, the exhaust mechanism 6, the fluid supply mechanism 7, the electrical circuit 8, and the substrate processing chamber 10. The control unit 101 operates by acquiring various information from a memory unit (not shown). The memory unit stores the programs and parameters necessary for the operation of the control unit 101.
[0054] <2. Substrate Processing Room> Figure 2 specifically illustrates the substrate processing chamber 10 of this example. As shown in Figure 2, the substrate processing chamber 10 of this example is constructed by housing various mechanisms within a housing 9. The housing 9 is a rectangular parallelepiped extending in the X direction. The housing 9 is composed of two wall plates perpendicular to the X direction, two wall plates perpendicular to the Y direction, and a bottom plate and a top plate perpendicular to the Z direction.
[0055] Inside the housing 9, a flat partition wall 34 is provided, perpendicular to the X direction. The partition wall 34 divides the internal space of the housing 9 into a first processing chamber R1 and a second processing chamber R2. The first processing chamber R1 is formed by the partition wall 34 dividing the housing 9. Similarly, the second processing chamber R2 is formed by the partition wall 34 dividing the housing 9. The partition wall 34 is provided with a passage opening 33 for transporting substrates within the substrate processing chamber 10. The passage opening 33 is provided in the partition wall 34 and is configured to allow substrates W to pass through. The first processing chamber R1 and the second processing chamber R2 are arranged in the X direction.
[0056] The first processing chamber R1 houses a first processing unit that performs the initial processing on the substrate W. Specifically, the first processing unit includes a plate 11 on which the substrate W is placed in a horizontal position. The substrate W placed on the plate 11 is subjected to a predetermined process (first process). The plate 11 is a stage that does not have a mechanism for gripping the substrate W or a mechanism for rotating the substrate W. A specific example of the first process will be described later. The plate 11 contacts and supports the entire lower surface of the substrate W.
[0057] The first processing unit also includes a liquid supply nozzle 13, a support unit 14 (see Figure 3), and the like.
[0058] The second processing chamber R2 houses a second processing unit that performs the latter half of the processing on the substrate W. Specifically, the second processing unit includes a vacuum chuck 21 that holds the substrate W in a horizontal position. The substrate W held in the vacuum chuck 21 is subjected to a predetermined process (second process). A specific example of the second process will be described later. The vacuum chuck 21 is disc-shaped in plan view, and its diameter is smaller than the diameter of the plate 11. The second process is different from the first process. The vacuum chuck 21 corresponds to the spin chuck of the present invention and is configured to rotatably support the substrate W.
[0059] The second processing unit also includes a cup 22, a liquid supply nozzle 23, a liquid supply nozzle 24, a liquid supply nozzle 25, a motor 26, and the like.
[0060] The auxiliary robot 12 is located in the first processing chamber R1. The auxiliary robot 12 is located near the partition wall 34 in the first processing chamber R1. The auxiliary robot 12 is mainly provided for the purpose of transporting the substrate W, which is placed on the plate 11, to the vacuum chuck 21. The auxiliary robot 12 transports the substrate W so that it passes through the passage opening 33 of the partition wall 34. The specific configuration of the auxiliary robot 12 will be described later. The auxiliary robot 12 transports the substrate W between the first processing chamber R1 and the second processing chamber R2 via the passage opening 33. More specifically, the auxiliary robot 12 transports the substrate W from the first processing chamber R1 to the second processing chamber R2.
[0061] In addition, the substrate processing chamber 10 is provided with a liquid supply nozzle 13 for supplying liquid to the substrate W. The liquid supply nozzle 13 is located in the first processing chamber R1 and is provided for applying liquid to the substrate placed on the plate 11. The liquid supply nozzle 25 is located in the second processing chamber R2 and supplies cleaning liquid to the top surface of the substrate. The liquid supply nozzle 23 is located in the second processing chamber R2 and supplies acidic liquid to the top surface of the substrate. The liquid supply nozzle 24 is located in the second processing chamber R2 and supplies alkaline liquid to the top surface of the substrate.
[0062] <3. First Processing Room> The first processing chamber R1 of this example will be described with reference to Figure 3. Figure 3 is a cross-sectional view illustrating the configuration of the first processing chamber in this example. As shown in Figure 3, the first processing chamber R1 of this example is an area surrounded by the housing 9 and the partition wall 34.
[0063] The partition wall 34 is a flat plate located inside the housing 9 and perpendicular to the X direction. The partition wall 34 is provided with a passage opening 33. The passage opening 33 is provided with a vertically movable separation shutter S3, which can be displaced between a closed state that blocks the passage opening 33 and an open state that opens the passage opening 33. The separation shutter S3 is located on the side of the partition wall 34 that faces the first processing chamber R1. The particles generated by the operation of the separation shutter S3 are less likely to enter the second processing chamber R2 related to substrate cleaning. The separation shutter S3 is provided at the passage opening 33 and is configured to be openable and closable, separating the first processing chamber R1 and the second processing chamber R2.
[0064] The plate 11 is a stage that does not have a function to rotate the substrate W, and is disc-shaped in plan view (see Figure 2). The plate 11 is slightly smaller than the substrate W, and when supporting the substrate, the peripheral edge of the substrate extends outward from the peripheral edge of the plate 11. In plan view, the plate 11 has substantially the same shape as the substrate W, and the center of the plate 11 and the center of the substrate W placed on the plate 11 coincide in plan view. Therefore, the plate 11 is configured to support the substrate W by substantially contacting the entire underside of the substrate. Since the plate 11 does not have a drive mechanism such as a pin that moves the substrate W up and down, the entire substrate W can be made to contact under the same conditions.
[0065] The plate 11 serves as an electrode when a voltage is applied to the substrate W. Such a plate 11 is suitable for electrolytic etching of the substrate W. To apply a voltage to the substrate W, another electrode is required on the top surface of the substrate. If a material is brought into contact with the top surface of the substrate, the circuit pattern formed on the top surface of the substrate will be damaged. Therefore, it is preferable to supply a conductive processing liquid to the top surface of the substrate and apply a predetermined voltage between the processing liquid and the plate 11. The processing liquid is supplied to the top surface of the substrate by a liquid supply nozzle 13, which will be described later. The plate 11 corresponds to the first processing unit of the present invention.
[0066] The center point 11A of plate 11 coincides with the center point WC of substrate W supported on plate 11.
[0067] The liquid supply nozzle 13 is provided for the purpose of supplying a predetermined liquid to the upper surface of the substrate W. The liquid supply nozzle 13 comprises a tip portion 13A for discharging liquid, an arm 13B for supporting the tip portion 13A, and an arm rotation mechanism 13C for rotating the arm 13B. The arm 13B is connected such that an extension member extending horizontally and a vertical member extending vertically form an L shape, and is equipped with piping for supplying liquid to the tip portion 13A. The arm rotation mechanism 13C is configured to rotate the extension member by rotating the vertical member. The arm rotation mechanism 13C is configured to rotate the extension member around the vertical member. The arm rotation mechanism 13C can move the tip portion 13A from a position that coincides with the center of the substrate W placed on the plate 11 in a plan view to a position that is moved away from above the substrate W.
[0068] In addition, the first processing chamber R1 is provided with a support member 14 for supporting the plate 11. The support member 14 is positioned between the bottom plate of the housing 9 and the plate 11.
[0069] The first processing chamber R1 is equipped with an auxiliary robot 12 for transporting substrates. In a plan view, the auxiliary robot 12 is positioned between the plate 11 (first processing unit) and the partition wall 34. Inside the first processing chamber R1, there is a region R3 for positioning the auxiliary robot 12, and the plate 11 is positioned to avoid this region R3.
[0070] <4. Second Processing Room> The second processing chamber R2 of this example will be described with reference to Figure 4. Figure 4 is a cross-sectional view illustrating the configuration of the second processing chamber in this example. As shown in Figure 4, the second processing chamber R2 of this example is an area surrounded by the housing 9 and the partition wall 34.
[0071] The vacuum chuck 21 supports the substrate W by suction. The vacuum chuck 21 also rotatably supports the substrate W. The vacuum chuck 21 allows the substrate W to rotate around a vertical axis passing through the center of the substrate W. The vacuum chuck 21 corresponds to the second processing unit of the present invention.
[0072] The cup 22 is a cylindrical component surrounding the substrate W, and is configured to receive the cleaning fluid that is shaken off the substrate W when the substrate W rotates. This prevents the processing fluid from splashing onto the housing 9 and partition wall 34 that constitute the second processing chamber R2. The cup 22 is movable up and down. When the substrate W is transferred to and from the vacuum chuck 21, the cup 22 is in a lowered position. As a result, the substrate W is exposed from the cup 22, and the cup 22 does not collide with the auxiliary robot 12 and the center robot CR. When cleaning fluid is supplied to the substrate W, the cup 22 is in an elevated position. As a result, the cleaning fluid that is shaken off the substrate W is reliably received by the cup 22.
[0073] The liquid supply nozzles 23, 24, and 25 have the same configuration as the liquid supply nozzle 13 of the first processing chamber R1 described above. That is, these liquid supply nozzles 23, 24, and 25 are provided for the purpose of supplying a predetermined liquid to the upper surface of the substrate W. For example, the liquid supply nozzle 25 is equipped with a tip portion 25A for discharging cleaning liquid, an arm 25B for supporting the tip portion 25A, and an arm rotation mechanism 25C for rotating the arm 25B, which is the same as the liquid supply nozzle 13 of the first processing chamber R1 described above (see Figure 4). The shape of the arms, the presence of piping, and the method of moving the tip portions of the other liquid supply nozzles 23, 24, and 25 are also the same configuration as the liquid supply nozzle 13 described above.
[0074] In addition, the second processing chamber R2 is equipped with a motor 26 for rotating the vacuum chuck 21. The motor 26 is positioned between the bottom plate of the housing 9 and the vacuum chuck 21.
[0075] <5. Auxiliary Robots> Next, the configuration of the auxiliary robot 12 in this example will be explained with reference to Figure 5, etc. Figure 5 is a plan view illustrating the configuration of the auxiliary robot according to this example. As shown in Figure 5, the auxiliary robot 12 includes a hand 12A that holds a substrate W in a horizontal position, an extendable arm 12B that supports the hand 12A at its tip, and a robot base 12C connected to the base end of the extendable arm 12B. The extendable arm 12B is extendable, and the distance (arm length) between the hand 12A and the robot base 12C can be changed. This extension and retraction operation of the extendable arm 12B is realized by a slider built into the extendable arm 12B. The slider corresponds to the arm length adjustment mechanism of the present invention, and is configured to change the turning radius of the hand 12A by changing the arm length of the extendable arm 12B.
[0076] A distinctive feature of the auxiliary robot 12 is its ability to transport the substrate W that has been filled with liquid.
[0077] The robot base 12C is provided adjacent to the partition wall 34. The telescopic arm 12B corresponds to the substrate transport arm of the present invention and is movably supported on the robot base 12C.
[0078] The hand 12A is configured to acquire the substrate W, which is placed on the plate 11 described later, from above. That is, the hand 12A is located above the substrate W that it supports. The hand 12A is supported by the telescopic arm 12B and is configured to hold the substrate W. When supporting the substrate W, the hand 12A approaches the substrate W from above. The hand 12A corresponds to the upper hand of the present invention.
[0079] The robot base 12C is provided with a reference axis AX1 for rotation, and the robot base 12C can rotate around the reference axis AX1 to rotate the hand 12A. Therefore, the reference axis AX1 is oriented in the vertical direction Z. This rotational movement of the robot base 12C is realized by the motor 15. The motor 15 corresponds to the arm rotation mechanism of the present invention and is configured to rotate the telescopic arm 12B with respect to the robot base 12C.
[0080] The positional relationship between the plate 11, the vacuum chuck 21, and the auxiliary robot 12 will now be explained. The auxiliary robot 12 is positioned at a distance in the Y direction from a virtual straight line V connecting the plate 11 and the vacuum chuck 21. More specifically, the robot base 12C of the auxiliary robot 12 is positioned at a distance in the Y direction from the virtual straight line V. By arranging the plate 11, the auxiliary robot 12, and the vacuum chuck 21 in a zigzag pattern rather than in a straight line, the distance between the plate 11 and the vacuum chuck 21 can be shortened, and the substrate processing chamber 10 can be shortened in the X direction. This arrangement of the auxiliary robot 12 has the effect of reducing the footprint of the substrate processing apparatus 1. The virtual straight line V is a straight line connecting the center of the plate 11 and the center of the vacuum chuck 21 in a plan view, and extends in the X direction.
[0081] Furthermore, as shown in Figure 6, the auxiliary robot 12 is located on the opposite side of the center robot CR from the virtual straight line V connecting the plate 11 and the vacuum chuck 21. More specifically, the robot base 12C of the auxiliary robot 12 is located on the opposite side of the center robot CR from the virtual straight line V. With this configuration, the auxiliary robot 12 does not interfere with the substrate transport operation to the substrate processing chamber 10 by the center robot CR. The virtual straight line V is a virtual line connecting the center point 11A of the plate 11 and the center point 21A of the vacuum chuck 21, and is oriented in the X direction. The plate 11 and the vacuum chuck 21 are positioned so that the virtual straight line V is oriented in the X direction.
[0082] Furthermore, as shown in Figure 6, the distance L1 in the X direction between the plate 11 and the auxiliary robot 12 is shorter than the distance L2 in the X direction between the vacuum chuck 21 and the auxiliary robot 12. Specifically, the distance L1 in the X direction between the center point 11A of the plate 11 and the reference axis AX1 set on the robot base 12C is shorter than the distance L2 in the X direction between the center point 21A of the vacuum chuck 21 and the reference axis AX1. With this configuration, the auxiliary robot 12 can be reliably positioned in the first processing chamber R1 having the plate 11.
[0083] Incidentally, the distance between the plate 11 and the auxiliary robot 12 is shorter than the distance between the vacuum chuck 21 and the auxiliary robot 12. Specifically, the distance in the X direction between the center point 11A of the plate 11 and the reference axis AX1 set on the robot base 12C is shorter than the distance L2 in the X direction between the center point 21A of the vacuum chuck 21 and the reference axis AX1.
[0084] Referring to Figure 7, a more specific explanation of the auxiliary robot 12 in this example will be given. Figure 7 shows the state in which the telescopic arm 12B is most retracted. The telescopic arm 12B is in this state, for example, when the hand 12A is facing in the Y direction. At this time, the hand 12A is in a position facing the center robot CR, as shown in Figure 6. Figure 7 shows the state of the auxiliary robot 12 while the first or second process is being executed.
[0085] Figure 8 shows the telescopic arm 12B in its most extended state. The telescopic arm 12B is constructed by assembling sub-arms 12D in a nested manner, and the telescopic arm 12B extends and retracts as the sub-arms 12D move relative to each other. The telescopic arm 12B reaches this state, for example, when the hand 12A reaches the vacuum chuck 21 in the second processing chamber R2.
[0086] In addition, as shown in Figure 9, the telescopic arm 12B may be of an intermediate length, longer than the shortest length shown in Figure 7 and shorter than the longest length shown in Figure 8. The telescopic arm 12B may be in this state, for example, when the hand 12A reaches the plate 11 in the first processing chamber R1.
[0087] <6. Substrate handling by auxiliary robots> Figure 10 illustrates the operation of the auxiliary robot 12 in transporting the substrate W. The auxiliary robot 12 has the function of transporting the substrate W, which is supported on the plate 11, to the vacuum chuck 21. Figure 10 shows the state when the auxiliary robot 12 has lifted the substrate W from the plate 11. At this time, the substrate W moves in the vertical direction Z, so when the auxiliary robot 12 has lifted the substrate W, the center point 11A of the plate 11 remains in a state that coincides with the center point WC of the substrate W in a plan view.
[0088] Figure 11 shows the subsequent actions. The auxiliary robot 12 retracts the telescopic arm 12B while rotating the telescopic arm 12B away from the plate 11.
[0089] Figure 12 shows the subsequent steps. The auxiliary robot 12 extends its telescopic arm 12B and rotates the telescopic arm 12B away from the plate 11. Figure 12 shows the auxiliary robot 12 with the substrate W placed on the vacuum chuck 21. At this point, the substrate W moves in the vertical direction Z, so the auxiliary robot 12 transports the substrate W to a position where the center point WC of the substrate W coincides with the center point 21A of the vacuum chuck 21 in a plan view. Then, the auxiliary robot 12 lowers the substrate W while maintaining the state in which the center point 21A coincides with the center point WC of the substrate W in a plan view. In this way, the auxiliary robot 12 places the substrate W on the auxiliary robot 12.
[0090] The auxiliary robot 12 moves linearly in the X direction relative to the substrate W, so this point will be explained. As explained in Figure 6, a virtual straight line V connecting the center point 11A of the plate 11 and the center point 21A of the vacuum chuck 21 extends in the X direction. The substrate W is moved with reference to this virtual straight line V. In other words, the auxiliary robot 12 ensures that the center point WC of the substrate W is always positioned on the virtual straight line V to transport the substrate W. The control unit 101 controls the auxiliary robot 12. Specifically, the control unit 101 controls, for example, the motor 15 and the telescopic arm 12B. The control unit 101 controls the motor 15 and the telescopic arm 12B to move the substrate W linearly from the plate 11 to the vacuum chuck 21. With this configuration, the travel distance of the substrate W is minimized, and the substrate W can be transported quickly.
[0091] The control unit 101 controls the elevator 12E, the telescopic arm 12B, and the motor 15, and controls the vertical and horizontal movement of the hand 12A. Similarly, the control unit 101 controls the actuator 12I, displacing the support member 80 between the open and closed states (see Figures 13 and 14).
[0092] <7. Configuration of the auxiliary robot's hand> Figure 13 is a plan view illustrating the configuration of the hand of the auxiliary robot in this example. As shown in Figure 13, the hand 12A has a flat plate-like configuration perpendicular to the vertical direction Z. The hand 12A includes a base 12A1 extending in a predetermined direction, and a first blade 12A2 and a second blade 12A3 branching from the base and extending horizontally in a Y-shape.
[0093] When supporting the substrate W, hand 12A is positioned above the substrate W. This configuration allows hand 12A to acquire the substrate W held by the center robot CR. Further details of this configuration will be described later.
[0094] Furthermore, the auxiliary robot 12 needs to be able to lift and place the substrate W, and therefore the hand 12A needs to change between a supported state and a released state of the substrate W. Figure 14 is a perspective view illustrating the vertical movement mechanism of the auxiliary robot according to this example. Figure 14 illustrates the shape of the hand 12A and the configuration for changing its state.
[0095] The hand 12A in this example is equipped with a support member 80 that contacts and supports the substrate W. When the hand 12A in this example supports the substrate W, it is located above the substrate W, so the support member 80 is configured to hang down from the hand 12A. The support member 80 is provided at the base of the hand 12A, the tip of the first blade, and the tip of the second blade. Therefore, there are three support members 80 on the hand 12A. Each of the support members 80 is equipped with an actuator 12I that moves the support member 80 relative to the hand 12A. The actuator 12I moves the support member 80 forward and backward with respect to the branching point T of the first blade 12A2 and the second blade 12A3.
[0096] When the hand 12A supports the substrate W, the three support members 80 are in a closed state, approaching the branching point T. When the hand 12A releases support from the substrate W, the three support members 80 are in an open state, moving away from the branching point T. The actuator 12I corresponds to the opening and closing mechanism of the present invention, and is configured to change the positional relationship between the support members 80, thereby changing the support members 80 from an open state to a closed state.
[0097] Furthermore, the branching point T coincides with the center point WC of the substrate W supported by hand 12A in a plan view.
[0098] <8. Up and down movement of the auxiliary robot's hand> Furthermore, the auxiliary robot 12 needs to move its hand 12A up and down so that it can lift and place the substrate W. Figure 14 illustrates the configuration for moving the hand 12A up and down.
[0099] In this example, the robot base 12C is supported by an elevator 12E. The elevator 12E comprises a vertical member 12F extending in the vertical direction Z and a motor 12G, which moves the robot base 12C up and down. Since the robot base 12C supports the hand 12A via an extendable arm 12B, the hand 12A moves up and down in accordance with the robot base 12C. The elevator 12E corresponds to the hand up and down movement mechanism of the present invention, and moves the hand 12A up and down.
[0100] <9. Horizontal movement of the auxiliary robot's hand> The telescopic arm 12B and motor 15 work together to move the hand 12A horizontally. The telescopic arm 12B and motor 15 correspond to the hand horizontal movement mechanism in this invention.
[0101] <10. Hand of the central robot> Figure 15 illustrates the hand 73 of the central robot CR. The hand 73 in this example is configured to grip a substrate W in a horizontal position. Specifically, the hand 73 has two blades 170 and a base member 171 connected to the base of each blade 170. Guides 172 that contact the substrate W are provided at the tip and base ends of the blades 170, and the hand 73 supports the substrate W via the guides 172. The guides 172 have a wall portion that contacts the bevel portion of the substrate W.
[0102] The pusher portion 173 is located on the base member 171 and can move in the direction in which the blade 170 extends. When the pusher portion 173 moves toward the tip of the blade 170, it comes into contact with the edge of the substrate W. Then, the bevel portion of the substrate W comes into contact with the wall of the guide 172 at the tip of the blade 170. In this way, the substrate W is held by the hand 73 by being sandwiched between the wall of the guide 172 and the pusher portion 173. Note that in Figure 15, the pusher portion 173 is located away from the tip of the blade 170, showing the state before the substrate W is held by the hand 73.
[0103] <11. Stacking arrangement in the substrate processing chamber> Figure 16 is a side view illustrating the stacking state of the substrate processing chambers in this example. As shown in Figure 16, the substrate processing chambers 10 are stacked vertically in the Z direction in the substrate processing apparatus 1. Therefore, the housing 9 is also stacked vertically in the Z direction. The auxiliary robot 12 is built into the substrate processing chamber 10, so there are as many auxiliary robots as there are substrate processing chambers 10 in the substrate processing apparatus 1. On the other hand, the hand 73 of the center robot CR can move in the Z direction as well as the X direction, and can access each of the substrate processing chambers 10 to load and unload substrates W into and out of the substrate processing chambers 10.
[0104] <12. Substrate processing in the substrate processing room> Figure 17 is a flowchart illustrating the substrate processing method in the substrate processing chamber 10. The flow of substrates in the substrate processing chamber will be explained below with reference to this flowchart.
[0105] Step S11: As shown in Figure 18, the center robot CR transports the unprocessed dry substrate W, which is placed on path 72, to the first processing chamber R1 of the substrate processing chamber 10. At this time, the center robot CR inserts the hand 73, which is gripping the substrate W, into the substrate processing chamber 10 from the Y direction through the open first opening 31. Therefore, the first shutter S1 is open at this time. The pusher part 173 is close to the substrate W, and the substrate W is gripped by the pusher part 173 and the guide 172.
[0106] On the other hand, Figure 19 shows the subsequent state, which is a plan view of the substrate W when the pusher portion 173 of the hand 73 is moved away from the substrate W from the state in Figure 18. That is, at this time the substrate W is placed on the hand 73 but is not gripped. At this time, the center point WC of the substrate W coincides with the center point 11A of the plate 11 in a plan view.
[0107] In step S11, the auxiliary robot 12 has its hand 12A pointed in the Y direction and its telescopic arm 12B in its most retracted state. The liquid supply nozzle 13 is moved away from the substrate W by rotating the arm 13B.
[0108] Subsequently, as shown in Figure 20, the auxiliary robot 12 rotates the hand 12A around the reference axis AX1 set on the robot base 12C. At this time, the hand 12A rotates counterclockwise. While performing this operation, the auxiliary robot 12 extends the telescopic arm 12B. Through this operation, the hand 12A moves above the substrate W. At this time, the branching point T of the hand 12A coincides with the center point WC of the substrate W in a plan view.
[0109] Step S12: Subsequently, as shown in Figure 21, the substrate W is transferred between the center robot CR and the auxiliary robot 12. The auxiliary robot 12 supports the substrate W held by the hand 73 of the center robot CR via the support member 80. At this time, the substrate W is supported by both the hand 73 of the center robot CR and the hand 12A of the auxiliary robot 12.
[0110] In this state, as shown in Figure 22, when the elevator 12E raises the hand 12A, the substrate W will be supported only by the hand 12A. In this way, the transfer of the substrate W between the center robot CR and the auxiliary robot 12 is performed. The hand 73 of the center robot CR then exits the substrate processing chamber 10 through the first opening 31. This step corresponds to the substrate transfer process of the present invention. The substrate transfer process is performed by the hand 12A of the auxiliary robot 12, which is located above the substrate W, acquiring the substrate W held by the hand 73 of the center robot CR, which is located below the substrate W. In this way, the auxiliary robot 12 acquires the substrate W supported by the hand 73 of the center robot CR with its hand 12A.
[0111] Step S13: Subsequently, the auxiliary robot 12 lowers its hand 12A and transports the substrate W to be held to the plate 11 as shown in Figure 23. Then, the hand 12A of the auxiliary robot 12 retracts the support member 80 and rises, moving away from the plate 11. The auxiliary robot 12 returns to the state described in step S11. That is, the auxiliary robot 12 is in the state where the telescopic arm 12B is most retracted with the hand 12A facing in the Y direction. This step corresponds to the first transport process of the present invention. The first transport process is performed by the hand 12A of the auxiliary robot placing the substrate on the plate 11 in the first processing unit.
[0112] Step S14: Subsequently, as shown in Figure 24, electrolytic etching is performed on the substrate W using the plate 11. At this time, the first shutter S1 and the separation shutter S3 are closed. Electrolytic etching corresponds to the first process in the present invention. This step S14 corresponds to the first processing step of the present invention.
[0113] Step S15: After electrolytic etching, pure water or IPA (isopropyl alcohol) is discharged from the supply nozzle 13 toward the substrate W, as shown in Figure 25. This causes the substrate W to be filled with liquid. At this time, the supply nozzle 13 is rotated from the state shown in Figure 23, and the tip 13A is moved to a position where it coincides with the center point WC of the substrate W in a plan view. Step S15 corresponds to the liquid filling process of the present invention.
[0114] Step S16: Subsequently, as shown in Figure 26, the substrate W is transferred between the auxiliary robot 12 and the plate 11. The auxiliary robot 12 supports the substrate W held by the plate 11 via the support member 80. At this time, the substrate W is supported by both the plate 11 and the hand 12A of the auxiliary robot 12.
[0115] In this state, as shown in Figure 27, when the hand 12A rises, the substrate W will be supported solely by the hand 12A. In this way, the transfer of the substrate W between the auxiliary robot 12 and the plate 11 is performed. The separation shutter S3 opens prior to the inter-room transport of the substrate W. The upward movement of the hand 12A is realized by the elevator 12E.
[0116] Step S17: The substrate W in the liquid-filled state is transported from the first processing chamber R1 to the second processing chamber R2 by the auxiliary robot 12. Figures 10, 11, and 12 show a plan view of the substrate transport at this time. Figure 28 shows the state when the substrate W in the liquid-filled state has reached the second processing chamber R2, which corresponds to the state in Figure 12. The separation shutter S3 opens during substrate transport by the auxiliary robot 12. This step S17 is local transport of the substrate and corresponds to the second transport process of the present invention. The second transport process is performed by transporting the substrate W held by the hand 12A of the auxiliary robot 12 to the second processing unit.
[0117] Step S18: Subsequently, as shown in Figure 29, the substrate W is transferred between the auxiliary robot 12 and the vacuum chuck 21. The auxiliary robot 12 supports the substrate W in the liquid-filled state via the support member 80. At this time, the substrate W is supported by both the vacuum chuck 21 and the hand 12A of the auxiliary robot 12. Note that the cup 22 is in the lowered state at this time. The cup 22 in the lowered state does not come into contact with the hand 12A of the auxiliary robot 12.
[0118] In this state, the hand 12A of the auxiliary robot 12 is retracted from the vacuum chuck 21, as shown in Figure 30. In this way, the substrate W is supported only by the vacuum chuck 21.
[0119] Step S19: Figure 31 shows the substrate W undergoing a second process. The second process consists of, for example, a substrate cleaning process and a substrate drying process. The second processing unit cleans the substrate W, which has been processed by the first processing unit, using a liquid supplied from the liquid supply mechanism 7. The second processing unit then dries the substrate W, which has been processed by the first processing unit. Step S19 corresponds to the second processing step of the present invention.
[0120] Figure 31 illustrates the process when the substrate cleaning process is performed. At this time, the tip 25A of the liquid supply nozzle 25 is moved to the center of the substrate W and discharges pure water. In the substrate cleaning process, the vacuum chuck 21 sucks and holds the substrate W, and then rotates the substrate W. The pure water discharged toward the rotating substrate W flows out to the edges of the substrate due to the rotational force of the substrate W. At this time, the cup 22 is in an elevated position so that it can receive the pure water. Note that the separation shutter S3 is in a closed state during the second process.
[0121] Figure 32 shows the process when substrate drying, a type of second treatment, is performed on the substrate W. At this time, pure water is not discharged from the liquid supply nozzle 25. The vacuum chuck 21 rotates the substrate W to shake off the pure water adhering to the top surface of the substrate and performs spin drying. In this way, the second treatment is completed on the substrate W.
[0122] Step S20: The dried substrate W is removed from the substrate processing chamber 10 by the central robot CR. Figure 33 shows the state when the hand 73 of the central robot CR is about to remove the substrate W from the vacuum chuck 21. The hand 73 moves in the Y direction from a position below the bottom surface of the substrate W to the bottom surface of the substrate W. At this time, a gap is created between the bottom surface of the substrate W and the hand 73.
[0123] Figure 33 shows the state when the hand 73 is raised from this state, and shows the state when the substrate W is held by both the vacuum chuck 21 and the hand 73. At this time, the vacuum chuck 21 has stopped sucking the substrate W. The second shutter S2, which can close the second opening 32, is in the open state, and the hand 73 of the center robot CR can enter the substrate processing chamber 10 through the second opening 32. At this time, the cup 22 is in the lowered state and does not come into contact with the hand 73.
[0124] Figure 34 shows the position when the hand 73 has risen to above the vacuum chuck 21. At this time, the substrate W is supported only by the hand 73. In this state, the pusher section 173 is closed, and the substrate W is gripped by the hand 73. The center robot CR moves the substrate W in the Y direction through the second opening 32 and pulls the substrate W out of the substrate processing chamber 10, completing the series of substrate transport operations. This step corresponds to the unloading process of the present invention.
[0125] <13. Support Members> The support member 80 of the hand 12A in this example will now be described. Figure 35 is a perspective view illustrating the configuration of the support member 80 in this example. The support member 80 is provided on the lower surface of the hand 12A and is a member that directly contacts the substrate W. That is, the support member 80 extends downward from the hand 12A body and contacts the lower surface of the substrate away from the periphery of the substrate to support the substrate.
[0126] As explained in Figure 13, multiple support members 80 are provided on the hand 12A. In this example, the substrate W is supported by each of the three support members 80 contacting the lower surface of the substrate W. The support members 80 are provided on the base 12A1 of the hand 12A and on each of the two blades 12A2 and 12A3 provided on the hand 12A.
[0127] The configuration of the support member 80 will be described with reference to Figure 35. The support member 80 has a connecting member 81 that extends downward from the hand 12A body. The horizontal member 82 is a member that extends from the lower end of the connecting member 81 toward the center of the substrate W. The support pin 83 is a member that protrudes upward from the tip of the horizontal member 82 and abuts against the lower surface of the substrate W. The support pin 83 abuts against a position on the lower surface of the substrate W that is radially inward from the periphery of the substrate W.
[0128] The connecting member 81 can be displaced relative to the hand 12A body by an actuator 12I provided on the auxiliary robot 12. That is, the support member 80 can be displaced from a closed state close to the substrate W (see Figure 35) to an open state away from the substrate W (see Figure 36). At this time, the support member 80 can reciprocate in the radial direction perpendicular to the tangential direction of the substrate W (the radial direction of the substrate W) by the actuator 12I. The support member 80 may also be configured to reciprocate 180° around the connecting member 81 as the axis of rotation.
[0129] When supporting the substrate W, the support member 80 is in a closed state as explained in Figure 35. Therefore, the three support members 80 are simultaneously in a closed state and cooperate to support the substrate W. When opening the substrate, the support member 80 is in an open state as explained in Figure 36. Therefore, the three support members 80 are simultaneously in an open state and cooperate to open the substrate W.
[0130] In the closed state, the support pins 83 of the support member 80 are located below the lower surface of the substrate W. In the closed state, the diameter of the virtual circle formed by connecting the three support pins 83 is smaller than the diameter of the substrate W. On the other hand, in the open state, the support pins 83 of the support member 80 are located away from the lower surface of the substrate W. In the open state, the diameter of the virtual circle formed by connecting the three support pins 83 is larger than the diameter of the substrate W.
[0131] <14. Operation of the support member and hand body> The operation of the support member 80 and the hand body will be described below. In this example, the hand 12A can acquire the substrate W supported by the plate 11 or the center robot CR, or it can place the substrate W on the vacuum chuck 21. First, the operation of the hand 12A when acquiring the substrate W will be described.
[0132] <15. Acquisition of circuit boards by an auxiliary robot's hand> Figure 37 is a flowchart illustrating how hand 12A acquires the substrate W. The operation of hand 12A in acquiring the substrate W on plate 11 will be described below with reference to Figure 37. Note that the following description describes the acquisition of a liquid-filled substrate W, but this acquisition method is just one example. Hand 12A can also acquire a dry substrate supported by hand 73 of the center robot CR. The auxiliary robot 12 transports the liquid-filled substrate W (e.g., pure water or IPA) in the first processing chamber R1 to the second processing chamber R2.
[0133] Step T11: As shown in Figure 39, the hand 12A is moved to above the substrate W. At this time, all support members 80 are in the open position. The movement of the hand 12A at this time is realized by the elevator 12E, motor 15, and telescopic arm 12B. At this time, the branching point T of the hand 12A coincides with the center point WC of the substrate W in a plan view. When the hand 12A acquires the substrate W from the center robot CR, the control unit 101 controls the elevator 12E, motor 15, and telescopic arm 12B to move the hand 12A, with the support members 80 in the open position, above the hand 73 that holds the substrate W.
[0134] Step T12: Subsequently, the hand 12A is lowered as shown in Figure 40. At this time, the body of the hand 12A does not come into contact with the liquid that has been poured onto the upper surface of the substrate W. Also, in this step T12, the tip of the support pin 83 is lower than the lower surface of the substrate W. The control unit 101 controls the elevator 12E to lower the hand 12A to a position where the tip of the support pin 83 is below the lower surface of the substrate W.
[0135] Step T13: Subsequently, as shown in Figure 41, the support member 80 is closed. Then, the support pins 83, which were retracted from the substrate W, move into the lower part of the substrate W. The control unit 101 controls the actuator 12I to close the support member 80.
[0136] Figure 42 shows the positional relationship between the substrate W and the support member 80 in this step. As shown in Figure 42, a gap D1 is provided between the substrate W and the support pin 83, which are spaced apart from each other in the vertical direction Z. Due to the existence of this gap D1, the support member 80 does not collide with the substrate W even when the open support member 80 is closed.
[0137] Furthermore, as shown in Figure 42, a gap D2 is provided between the support pin 83 and the plate 11 when the door is closed. The presence of this gap D2 prevents the support pin 83 from colliding with the plate 11.
[0138] Step T14: Subsequently, hand 12A is raised. This raising of hand 12A is accomplished by elevator 12E attached to auxiliary robot 12.
[0139] Figure 43 shows the state in which the tip of the support pin 83 contacts the underside of the substrate W as the hand 12A rises. At this time, the substrate W is supported by both the plate 11 and the support pin 83. The control unit 101 controls the elevator 12E to raise the hand 12A and bring the tip of the support pin 83 into contact with the underside of the substrate W.
[0140] Figure 44 shows the positional relationship between the substrate W and the support member 80 in this step. As shown in Figure 44, a gap D3 is provided between the edge of the substrate W and the connecting member 81. The presence of this gap D3 prevents the liquid placed on the substrate W from dripping down the connecting member 81 of the closed support member 80. In this way, the support member 80 is spaced apart from the periphery of the substrate.
[0141] Furthermore, as shown in Figure 44, a gap D4 is provided between the support pin 83 and the edge of the substrate W when the support pin is closed. The presence of this gap D4 prevents the liquid applied to the substrate W from dripping down the support pin 83. The distance between the support pin 83 and the center of the substrate is longer than the distance between the support pin 83 and the periphery of the substrate. In other words, the gap D4 is only a small distance relative to the entire substrate W. Thus, the support member 80 is spaced apart from the periphery of the substrate.
[0142] Figure 45 shows the state after the hand 12A has raised the substrate W above the plate 11 from the state shown in Figure 43. At this time, the substrate W is supported only by the hand 12A. In this way, the acquisition of the substrate W by the hand 12A in this example is completed.
[0143] <16. Placing of circuit boards by the auxiliary robot's hand> Figure 38 is a flowchart illustrating how the hand 12A places the substrate W. The operation of the hand 12A in placing the substrate W onto the vacuum chuck 21 will be described below with reference to Figure 38. Note that the following description will focus on the placement of a liquid-filled substrate W, but this method of placing the substrate W is just one example. The hand 12A can also place a dry substrate supported by the hand 73 of the center robot CR onto the plate 11.
[0144] Step T21: As shown in Figure 46, the hand 12A is moved to above the vacuum chuck 21 while holding the substrate W. At this time, all support members 80 are in the closed position. The movement of the hand 12A at this time is realized by the elevator 12E, motor 15, and telescopic arm 12B. At this time, the branching point T of the hand 12A coincides with the center point 21A of the vacuum chuck 21 in a plan view.
[0145] Step T22: Subsequently, the hand 12A is lowered as shown in Figure 47. This lowering of the hand 12A is achieved by the elevator 12E attached to the auxiliary robot 12. When the control unit 101 places the substrate W on the vacuum chuck 21, it controls the elevator 12E to lower the hand 12A, which is supporting the substrate with the support pins 83, and move the substrate W to the vacuum chuck 21. The control unit 101 performs a similar operation when placing the substrate on the plate 11.
[0146] Figure 47 shows the state in which the substrate W comes into contact with the vacuum chuck 21 as the hand 12A descends. At this time, the substrate W is supported by both the vacuum chuck 21 and the support pins 83.
[0147] Subsequently, the hand 12A is lowered as shown in Figure 48. At this time, the hand 12A body does not come into contact with the liquid that has been poured onto the upper surface of the substrate W. Also, in this step T22, the tip of the support pin 83 is lower than the lower surface of the substrate W. The control unit 101 controls the elevator 12E to lower the hand 12A to a position where the tip of the support pin 83 is below the lower surface of the substrate W.
[0148] Figure 49 shows the positional relationship between the substrate W and the support member 80 in step T22. As shown in Figure 49, a gap D5 is provided between the substrate W and the support pin 83, which are spaced apart from each other in the vertical direction Z. The presence of this gap D5 prevents the support member 80 from sliding against the substrate W even when the support member 80 is opened from a closed state.
[0149] Furthermore, as shown in Figure 49, a gap D6 is provided between the support pin 83 and the vacuum chuck 21 when the device is closed. The presence of this gap D6 prevents the support pin 83 from colliding with the vacuum chuck 21.
[0150] Step T23: Subsequently, as shown in Figure 50, the support member 80 opens. Then, the support pin 83, which had been recessed below the substrate W, retracts from the substrate W. The control unit 101 controls the actuator 12I to open the support pin 83.
[0151] Figure 51 shows the positional relationship between the substrate W and the support member 80 in this step. As shown in Figure 51, a gap D7 is provided between the substrate W and the support pin 83, which are spaced apart horizontally from each other. Because of this gap D7, even if the open support member 80 is moved above the substrate W, the support member 80 will not collide with the substrate W.
[0152] Step T24: Subsequently, the hand 12A is raised as shown in Figure 52. This raising of the hand 12A is achieved by the elevator 12E attached to the auxiliary robot 12. Specifically, the control unit 101 controls the elevator 12E, motor 15, and telescopic arm 12B to move the hand 12A upward and horizontally, and move it away from the substrate W. In this way, the placement of the substrate W by the hand 12A in this example is completed.
[0153] <17. Exhaust from the substrate processing chamber and related components> Next, the exhaust system in the substrate processing chamber and related components will be described with reference to Figure 53. The exhaust mechanism 6 of the substrate processing apparatus 1 is provided with intake and exhaust pipes 90 that extend vertically. The intake and exhaust pipes 90 extend in communication with each of the vertically stacked exhaust mechanisms 6 and connect to a horizontal exhaust pipe 89 that extends horizontally and is located at the bottom of the substrate processing apparatus 1. The horizontal exhaust pipe 89 extends to the outside of the substrate processing apparatus 1 and connects to the intake pump inside the factory.
[0154] The intake and exhaust pipe 90 is located adjacent to the first processing chamber R1 of the substrate processing chamber 10. The substrate processing chamber 10 and the intake and exhaust pipe 90 are connected via a first branch pipe 93 and a second branch pipe 94 that extend horizontally. Air in the first processing chamber R1 of the substrate processing chamber 10 flows into the intake and exhaust pipe 90 via the first branch pipe 93. Similarly, air in the second processing chamber R2 of the substrate processing chamber 10 flows into the intake and exhaust pipe 90 via the second branch pipe 94. Air is an example of a gas in this invention.
[0155] As can be seen in Figure 53, the intake and exhaust pipe 90, the first processing chamber R1, and the second processing chamber R2 are arranged horizontally in a single line. In other words, the intake and exhaust pipe 90 is configured to draw in air not only from the adjacent first processing chamber R1, but also from the spaced-away second processing chamber R2.
[0156] Figure 54 illustrates the configuration of the branch pipes in the substrate processing chamber 10. The first branch pipe 93 extends in the X direction from the intake / exhaust pipe 90 toward the first processing chamber R1 and communicates with the first exhaust opening 91 provided on the wall surface forming the first processing chamber R1 in the housing 9. The first exhaust opening 91 lies in the plane formed by the Y direction and the vertical direction Z. Therefore, the first exhaust opening 91 is provided on a predetermined wall surface W1 perpendicular to the X direction in the housing 9. The first branch pipe 93 is configured to connect the first processing chamber R1 and the intake / exhaust pipe 90.
[0157] The second branch pipe 94 extends in the X direction from the intake / exhaust pipe 90 toward the second processing chamber R2 and communicates with the second exhaust opening 92 provided in the partition wall 34. The second branch pipe 94 penetrates the predetermined wall surface W1 described above, crosses the interior of the first processing chamber R1 in the X direction, and reaches the second exhaust opening 92. The second branch pipe 94 starts from the partition wall 34, passes through the interior of the first processing chamber R1, and connects to the intake / exhaust pipe 90. The second branch pipe 94 is provided on the floor surface FS of the first processing chamber R1. The second branch pipe 94 is adjacent to the first opening 31. Therefore, the second branch pipe 94 is provided on the side of the first processing chamber R1 where the center robot CR is located. The second branch pipe 94 is configured to connect the second processing chamber R2 and the intake / exhaust pipe 90.
[0158] Furthermore, the second branch pipe 94 is located on the opposite side from the auxiliary robot 12, with a virtual straight line V connecting the first processing unit (plate 11) and the second processing unit (vacuum chuck 21) in between.
[0159] On the other hand, the first branch pipe 93 is located adjacent to the second branch pipe 94 in the Y direction and is at the same height as the second branch pipe 94. The first branch pipe 93 is located further away from the first opening 31 than the second branch pipe 94.
[0160] As shown in Figure 55, the substrate processing chamber 10 is equipped with a rectifier system that generates airflow within the processing chamber. The rectifier system consists of a first fan 111 located on the ceiling of the first processing chamber R1, a flat plate-shaped first filter 113 attached to the first fan 111, a second fan 112 located on the ceiling of the second processing chamber R2, a flat plate-shaped second filter 114 attached to the second fan 112, a first branch pipe 93, a second branch pipe 94, a first valve V1, and a second valve V2.
[0161] The first fan 111 has multiple fins and rotates to generate an airflow that blows down from above the substrate processing chamber 10 toward the first processing chamber R1. The first filter 113 is located below the first fan 111 and is configured to remove particles contained in the airflow generated by the first fan 111.
[0162] The first valve V1 is an automatic valve that opens and closes according to the operation of the control unit 101, and is located inside the first branch pipe 93. The first valve V1 is configured to control the flow rate of air passing through the first branch pipe 93.
[0163] The second fan 112 has multiple fins and, by rotating, generates an airflow that blows down from above the substrate processing chamber 10 toward the second processing chamber R2. The second filter 114 is located below the second fan 112 and is configured to remove particles contained in the airflow generated by the second fan 112.
[0164] The second valve V2 is an automatic valve that opens and closes according to the operation of the control unit 101 and is located inside the second branch pipe 94. The second valve V2 is configured to control the flow rate of air passing through the second branch pipe 94.
[0165] <18. Operation of the first and second valves> Since the intake and exhaust pipe 90 is shared between the first processing chamber R1 and the second processing chamber R2, the first valve V1 and the second valve V2 are controlled to reduce the load on the intake and exhaust pipe 90. Figure 56 illustrates the operation of the rectifier system when the substrate W is located in the first processing chamber R1. Figure 56 shows the situation when the substrate W is brought into the first processing chamber R1 by the center robot CR, but in other cases, such as during the first processing, when the substrate W remains in the first processing chamber R1, the rectifier system operates as follows.
[0166] When the substrate W is located in the first processing chamber R1, the first valve V1 is open and the second valve V2 is closed. At this time, the first fan 111 is operating and the second fan 112 is idle. Therefore, in this case, the second fan 112 is not rotating.
[0167] In this case, as shown in Figure 56, the air blown down by the first fan 111 passes through the first branch pipe 93 and reaches the intake / exhaust pipe 90.
[0168] On the other hand, at this time, the second fan 112 is idle and the second valve V2 is closed, so no airflow is generated in the second processing chamber R2.
[0169] Since the passage opening 33 is closed at this time, no airflow is generated through the passage opening 33.
[0170] The case where the substrate W is located in the first processing chamber R1 is, for example, during the first processing. In this case, the first valve V1 and the second valve V2 are controlled so that the flow rate of gas flowing through the first branch pipe 93 is greater than the flow rate of gas flowing through the second branch pipe 94. In this example, the second valve V2 was set to a fully closed state, but the present invention is not limited to this configuration, and the second valve V2 may be set to a half-open state. In other words, the airflow in the first processing chamber R1 during the first processing cannot be weakened in order to ensure processing quality, but the airflow in the second processing chamber R2 when processing is not taking place has no relation to the first processing. Therefore, the substrate processing apparatus 1 in this example is configured to stop or weaken the airflow in the second processing chamber R2 during the first processing. When an airflow is generated in the second processing chamber R2 during the first processing, the second fan 112 may or may not be operating.
[0171] Figure 57 shows the airflow when the first opening 31 is open. When the first opening 31 is open, in addition to the airflow described in Figure 56, an airflow is also generated from the first opening 31 toward the first exhaust opening 91. The first opening 31 is open when the first shutter S1 is open and the substrate W is being transported by the center robot CR. When the substrate W is being transported through the first opening 31, the control unit 101 controls the first valve V1 so that gas flows from the outside toward the first processing chamber R1 through the first opening 31. This prevents air from the first processing chamber R1 from leaking into the transport area (region B) when the substrate W is being transported into the first processing chamber R1.
[0172] Figure 58 illustrates the operation of the rectifier system when the separation shutter S3 is open. The separation shutter S3 is open when the auxiliary robot 12 transports the substrate W from the first processing chamber R1 to the second processing chamber R2. This transport is called local transport.
[0173] When the circuit board W is being transported locally, the first valve V1 is open and the second valve V2 is half-open. At this time, the first fan 111 and the second fan 112 are operating. The opening degree of the second valve V2 is smaller than the opening degree of the first valve.
[0174] In this case, as shown in Figure 58, the air blown down by the first fan 111 passes through the first branch pipe 93 and reaches the intake / exhaust pipe 90. Then, the air blown down by the second fan 112 passes through the second branch pipe 94 and reaches the intake / exhaust pipe 90.
[0175] In this case, since the separation shutter S3 is open, airflow is also generated through the passage opening 33 provided in the partition wall 34. The suction force of the second branch pipe 94 that sucks air from the second processing chamber R2 is weaker than the suction force of the first branch pipe 93 that sucks air from the first processing chamber R1, so airflow is generated at the passage opening 33 from the second processing chamber R2 to the first processing chamber R1. The control unit 101 opens the separation shutter S3 and controls the first valve V1 and the second valve V2 so that air flows from the second processing chamber R2 to the first processing chamber R1 through the passage opening 33 when the substrate W passes through the passage opening 33.
[0176] Since both the first opening 31 and the second opening 32 are closed at this time, no airflow is generated through the first opening 31 and the second opening 32.
[0177] Figure 59 illustrates the operation of the rectifier system when the substrate W is located in the second processing chamber R2. Figure 59 depicts the state when the substrate W is undergoing the second processing, but in other cases, such as when the substrate W is gripped by the center robot CR, or when the substrate W remains in the second processing chamber R2, the rectifier system operates as follows.
[0178] When the substrate W is located in the second processing chamber R2, the second valve V2 is open and the first valve V1 is closed. In this case, the second fan 112 is operating and the first fan 111 is idle. Therefore, the first fan 111 is not rotating in this case.
[0179] In this case, as shown in Figure 59, the air blown down by the second fan 112 passes through the second branch pipe 94 and reaches the intake / exhaust pipe 90.
[0180] On the other hand, at this time, the first fan 111 is idle and the first valve V1 is closed, so no airflow is generated in the first processing chamber R1.
[0181] Since the passage opening 33 is closed at this time, no airflow is generated through the passage opening 33.
[0182] The case where the substrate W is located in the second processing chamber R2 is, for example, when the second processing is underway. In this case, the first valve V1 and the second valve V2 are controlled so that the flow rate of gas flowing through the second branch pipe 94 is greater than the flow rate of gas flowing through the first branch pipe 93. In this example, the first valve V1 was in a fully closed state, but the present invention is not limited to this configuration, and the first valve V1 may be in a half-open state. In other words, the airflow in the second processing chamber R2 during the second processing cannot be weakened in order to ensure processing quality, but the airflow in the first processing chamber R1 when processing is not taking place has no relation to the second processing. Therefore, the substrate processing apparatus 1 in this example is configured to stop or weaken the airflow in the first processing chamber R1 during the second processing. When generating airflow in the first processing chamber R1 during the second processing, the first fan 111 may or may not be operating.
[0183] Figure 60 shows the airflow when the second opening 32 is open. When the second opening 32 is open, in addition to the airflow described in Figure 59, an airflow is also generated from the second opening 32 toward the second exhaust opening 92. The second opening 32 is open when the second shutter S2 is open and the substrate W is being discharged by the center robot CR. When the substrate W is being discharged through the second opening 32, the control unit 101 controls the second valve V2 so that gas flows from the outside toward the second processing chamber R2 through the second opening 32. This prevents air from the second processing chamber R2 from leaking into the transport area (region B) when the substrate W is being discharged from the second processing chamber R2.
[0184] Figure 61 shows the state of the rectifier system at each step of the substrate transport process described in Figure 17. When the substrate W is transported to the first processing chamber R1, when the substrate W is transferred from the center robot CR to the auxiliary robot 12, when the auxiliary robot 12 places the substrate W on the plate 11, when the first processing is performed, and when liquid is applied to the substrate, the first valve V1 is in the open state. In this case, the first fan 111 is in the operating state, the second valve V2 is in the closed state, and the second fan 112 is in the idle state.
[0185] Furthermore, during local transport, the first valve V1 remains open, while the second valve V2 is half-open. Similarly, during local transport, the first fan 111 remains operational, while the second fan 112 is operational. In this way, the airflow described in Figure 58 is generated within the substrate processing chamber 10. When the auxiliary robot 12 transfers the liquid-filled substrate W to the vacuum chuck 21, the extendable arm 12B of the auxiliary robot 12 extends through the passage opening 33. Therefore, the passage opening 33 is open in this case. In other words, the rectification system maintains the same state as during local transport until the hand 12A of the auxiliary robot 12 returns to the first processing chamber R1 and the separation shutter S3 closes.
[0186] When the substrate W undergoes the second processing in the second processing chamber R2, and when the substrate W is transported from the second processing chamber R2 by the central robot CR, the second valve V2 is in the open state. In this case, the first fan 111 is in the idle state, the first valve V1 is in the closed state, and the second fan 112 is in the operational state. In this manner, the rectifier system operates to appropriately control the airflow within the substrate processing chamber in accordance with the transport stage of the substrate W.
[0187] <19. Exhaust method in this example> Figure 62 is a flowchart illustrating the exhaust method in this example. The exhaust method in this example will be explained with reference to this figure.
[0188] Step U1: When substrate processing is performed in the first processing chamber R1, the exhaust flow rate of the first processing chamber R1 is made greater than the exhaust flow rate of the second processing chamber R2. This step corresponds to the first exhaust process of the present invention.
[0189] Step U2: When the substrate W is transported from the first processing chamber R1 to the second processing chamber R2, the exhaust volumes of the first processing chamber R1 and the second processing chamber R2 are adjusted to generate an airflow from the second processing chamber R2 toward the first processing chamber R1. This step corresponds to the third exhaust process of the present invention.
[0190] Step U3: When substrate processing is performed in the second processing chamber R2, the exhaust flow rate of the second processing chamber R2 is increased to be greater than the exhaust flow rate of the first processing chamber R1. This step corresponds to the second exhaust process of the present invention.
[0191] <20. Effects of the present invention> The substrate processing apparatus 1 described above includes a first processing chamber R1 housing a first processing unit that performs a first processing on a substrate W, a second processing chamber R2 housing a second processing unit that performs a second processing on a substrate W, an intake and exhaust pipe 90 extending in the vertical direction Z, a first branch pipe 93 connecting the first processing chamber R1 and the intake and exhaust pipe 90, and a second branch pipe 94 connecting the second processing chamber R2 and the intake and exhaust pipe 90. The intake and exhaust pipe 90, the first processing chamber R1, and the second processing chamber R2 are arranged in a horizontal line in that order. With this configuration, the substrate processing apparatus 1 can be constructed by providing only one intake and exhaust pipe 90 for two processing units arranged horizontally. Therefore, the substrate processing apparatus 1 of the present invention does not require an intake and exhaust pipe 90 for each processing unit, resulting in a small footprint.
[0192] The substrate processing apparatus 1 described above comprises a housing 9 and a flat partition wall 34 that divides the housing 9 into a first processing chamber R1 and a second processing chamber R2. With this configuration, the two processing units can be placed as close together as possible, thus providing a substrate processing apparatus 1 with a small footprint.
[0193] According to the substrate processing apparatus 1 described above, the second branch pipe 94 passes through the inside of the first processing chamber R1 and is connected to the intake / exhaust pipe 90. With this configuration, the apparatus does not become larger simply by adding the second branch pipe 94, because the second branch pipe 94 is built into the first processing chamber R1.
[0194] If the second branch pipe 94 is provided on the floor surface of the first processing chamber R1, as in the substrate processing apparatus 1 described above, the second branch pipe 94 will not obstruct substrate transport.
[0195] According to the substrate processing apparatus 1 described above, an auxiliary robot 12 is provided inside the first processing chamber R1 to transport the substrate W from the first processing chamber R1 to the second processing chamber R2 via a passage 33 provided in the partition wall 34, and the second branch pipe 94 is provided on the opposite side from the auxiliary robot 12, with a virtual straight line V connecting the first processing chamber and the second processing chamber. With this configuration, the second branch pipe 94 does not interfere with the maintenance of the auxiliary robot 12.
[0196] According to the substrate processing apparatus 1 described above, a central robot CR for transporting substrates W into the first processing chamber R1 is provided adjacent to the housing 9, and the second branch pipe 94 is provided on the side of the first processing chamber R1 where the central robot CR is located. With this configuration, it is not necessary to provide the second branch pipe 94 on the side of the first processing chamber R1 opposite to where the central robot CR is located. The substrate processing apparatus 1 of the present invention can secure a maintenance area related to the first processing chamber R1 on this opposite side.
[0197] According to the substrate processing apparatus 1 described above, the housing 9 is stacked in the vertical direction Z. With this configuration, the throughput of the substrate processing apparatus 1 is improved.
[0198] According to the substrate processing apparatus 1 described above, when the first processing unit performs the first processing, the first valve V1 and the second valve V2 are controlled so that the flow rate of gas flowing through the first branch pipe 93 is greater than the flow rate of gas flowing through the second branch pipe 94. When the second processing unit performs the second processing, the first valve V1 and the second valve V2 are controlled so that the flow rate of gas flowing through the second branch pipe 94 is greater than the flow rate of gas flowing through the first branch pipe 93. With this configuration, a large airflow is generated in the processing unit being used. This airflow makes it possible to perform substrate processing while removing particles suspended in the gas. Furthermore, only a small airflow is generated in the processing unit that is not being used. This airflow is of little importance for substrate processing. Thus, according to the present invention, substrate processing can be performed while conserving the gas intake capacity of the intake and exhaust pipes 90 as much as possible.
[0199] According to the substrate processing apparatus 1 described above, the housing 9 and the partition wall 34 that separates the housing 9 into a first processing chamber R1 and a second processing chamber R2 are equipped with a passage 33 through which the substrate W passes, and a separation shutter S3 that opens and closes the passage 33. When the separation shutter S3 is in the open state and the substrate W passes through the passage 33, the first valve V1 and the second valve V2 are controlled so that gas flows from the second processing chamber R2 to the first processing chamber R1 through the passage 33. With this configuration, substrate processing can be performed while maintaining the cleanliness of the second processing chamber R2. If an airflow is generated from the second processing chamber R2 to the first processing chamber R1 through the passage 33, particles generated in the first processing chamber R1 will not enter the second processing chamber R2.
[0200] According to the substrate processing apparatus 1 described above, the housing 9 surrounding the first processing chamber R1 is provided with a first opening 31 for loading the substrate W into the first processing chamber R1. When the substrate W is loaded into the first opening 31, the first valve V1 is controlled so that gas flows from the outside towards the first processing chamber R1 through the first opening 31. With this configuration, particles generated in the first processing chamber R1 will not dissipate to the outside of the housing 9 through the first opening 31.
[0201] According to the substrate processing apparatus 1 described above, the housing 9 surrounding the second processing chamber R2 is provided with a second opening 32 for loading the substrate W into the second processing chamber R2. When the substrate W is loaded into the second opening 32, the second valve V2 is controlled so that gas flows from the outside towards the second processing chamber R2 through the second opening 32. With this configuration, particles generated in the second processing chamber R2 will not dissipate to the outside of the housing 9 through the second opening 32.
[0202] <21. Variant> The present invention is not limited to the above-described configuration and can be modified and implemented as follows.
[0203] <Example 1> In this invention, the housing 9 has one partition wall 34, and the housing 9 is separated into two processing chambers, but the invention is not limited to this configuration. Two or more partition walls 34 may be provided to create three or more processing chambers. In this case as well, each processing chamber is provided with an exhaust branch pipe, which communicates with a single intake and exhaust pipe 90. [Explanation of symbols]
[0204] 1. Substrate processing apparatus 3 Indexer Block 4 Load Ports 5. Substrate processing block 6. Exhaust mechanism 7 Liquid supply mechanism 8. Electrical Circuits 9 cabinets 10. Substrate Processing Room 11 plates 11A Center point 12 Auxiliary robots 12A Hand 12B Extendable Arm 12C Robot Base 12D Subarm 12E Elevator 12F Vertical Member 12G motor 12I Actuator 12J Joint 12K base material 13. Liquid dispensing nozzle 13A Tip 13B Arm 13C Arm Swivel Mechanism 14 Support Member 15 Motor 21 Vacuum Chuck 21 Center point 22 cups 23. Liquid dispensing nozzle 24 liquid supply nozzles 25 Liquid dispensing nozzle 25A tip 25B Arm 25C Arm Swivel Mechanism 26 Motors 31. First opening 32. Second opening 33 Passage gate 34 Bulkhead 71 Batch Hand 72 Pass 73 Hand 80 Support member 81 Connecting member 82 Horizontal member 83 Support pins 89 Horizontal drainage pipe 90 Intake and exhaust pipes 91 First exhaust opening 92 Second exhaust opening 93 First branch pipe 94 Second branch pipe 101 Control Unit 111 First Fan 112 Second Fan 113 First Filter 114 Second filter 170 blades 171 Base member 172 Guide 173 Pusher section AX1 Reference axis AX2 Rotation axis B area C Career CR Center Robot D1 Gap D2 Gap D3 gap D4 gap D5 gap D6 gap D7 gap FS floor surface IR indexer robot L1 distance L2 distance R1 first processing chamber R2 second processing chamber R3 region S1 first shutter S2 second shutter S3 separation shutter T branch point V straight line V1 first valve V2 second valve W substrate W1 predetermined wall surface WC center point
Claims
1. In a substrate processing apparatus for processing substrates, A first processing chamber housing a first processing unit that performs the first processing on a substrate, A second processing chamber housing a second processing unit that performs a second processing on the substrate, Intake and exhaust pipes extending vertically, A first branch pipe connecting the first processing chamber and the intake / exhaust pipe, The system comprises a second branch pipe connecting the second processing chamber and the intake / exhaust pipe, The intake and exhaust pipes, the first processing chamber, and the second processing chamber are arranged in a horizontal line in that order. A substrate processing apparatus characterized by the following:
2. In the substrate processing apparatus according to claim 1, The casing and The housing comprises a flat partition wall that divides the housing into a first processing chamber and a second processing chamber. A substrate processing apparatus characterized by the following:
3. In the substrate processing apparatus according to claim 2, The second branch pipe passes through the inside of the first processing chamber and is connected to the intake and exhaust pipe. A substrate processing apparatus characterized by the following:
4. In the substrate processing apparatus according to claim 3, The second branch pipe is provided on the floor surface of the first processing chamber. A substrate processing apparatus characterized by the following:
5. In the substrate processing apparatus according to claim 3, An auxiliary robot is provided inside the first processing chamber to transport the substrate from the first processing chamber to the second processing chamber through a passage opening provided in the partition wall. The second branch pipe is located on the opposite side of the auxiliary robot from the imaginary straight line connecting the first processing unit and the second processing unit. A substrate processing apparatus characterized by the following:
6. In the substrate processing apparatus according to claim 3, A central robot for transporting the substrate into the first processing chamber is provided adjacent to the housing, The second branch pipe is provided inside the first processing chamber on the side where the central robot is located. A substrate processing apparatus characterized by the following:
7. In the substrate processing apparatus according to claim 2, The aforementioned housing is stacked in the vertical direction. A substrate processing apparatus characterized by the following:
8. In the substrate processing apparatus according to claim 2, A first valve that changes the flow rate of gas flowing through the first branch pipe, A second valve that changes the flow rate of gas flowing through the second branch pipe, The system includes a control unit that controls the first valve and the second valve, The control unit, When the first processing unit performs the first processing, it controls the first valve and the second valve so that the flow rate of gas flowing through the first branch pipe is greater than the flow rate of gas flowing through the second branch pipe. When the second processing unit performs the second processing, it controls the first valve and the second valve so that the flow rate of gas flowing through the second branch pipe is greater than the flow rate flowing through the first branch pipe. A substrate processing apparatus characterized by the following:
9. In the substrate processing apparatus according to claim 8, The casing and The partition wall separating the first processing chamber and the second processing chamber in the housing is, A pass-through opening for the circuit board, It includes a separation shutter for opening and closing the aforementioned passage opening, The control unit, When the separation shutter is in the open state and the substrate is passed through the passage opening, the first valve and the second valve are controlled so that gas flows from the second processing chamber to the first processing chamber through the passage opening. A substrate processing apparatus characterized by the following:
10. In the substrate processing apparatus according to claim 8, The enclosure surrounding the first processing chamber is provided with a first opening for transporting a substrate into the first processing chamber. The control unit, When a substrate is loaded into the first opening, the first valve is controlled so that gas flows from the outside towards the first processing chamber through the first opening. A substrate processing apparatus characterized by the following:
11. In the substrate processing apparatus according to claim 8, The enclosure surrounding the second processing chamber is provided with a second opening for removing the substrate from the second processing chamber. The control unit, When a substrate is loaded into the second opening, the second valve is controlled so that gas flows from the outside towards the second processing chamber through the second opening. A substrate processing apparatus characterized by the following:
Citation Information
Patent Citations
Processing system
JP1999074168A
Substrate-treating device
JP2007049093A
Substrate processing apparatus
JP2010087116A
Substrate processing device
JP2018046272A
Substrate processing device
JP2022132016A