Photoelectric conversion device and display apparatus

Abstract

Provided is a new photoelectric conversion device with excellent convenience, utility, or reliability. A photoelectric conversion device (550S) includes a first electrode (551S), a second electrode (552S), and a unit (103S). The unit (103S) is sandwiched between the first electrode (551S) and the second electrode (552S). The unit (103S) is provided with a first layer (113) and a second layer (114S). The first layer (113) is sandwiched between the second electrode (552S) and the second layer (114S). The first layer (113) includes a first organic compound ETM. The first organic compound ETM has electron transport property. The first organic compound ETM has a LUMO level denoted as a first level LUMO1. The second layer (114S) includes a second organic compound CTM. The second organic compound CTM emits delayed fluorescence at room temperature, and has a LUMO level denoted as a second level LUMO2. The difference between the second level LUMO2 and the first level LUMO1 is 1.0 eV or less.

Description

Photoelectric conversion device and display device

[0001] One embodiment of the present invention relates to a photoelectric conversion device, a display device, or a semiconductor device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a photoelectric conversion device, a display device, a semiconductor device, a driving method thereof, or a manufacturing method thereof.

[0003] A functional panel is known in which pixels provided in a display area include a light-emitting element and a photoelectric conversion element (see Patent Document 1). For example, a functional panel includes a first drive circuit, a second drive circuit, and an area, where the first drive circuit supplies a first selection signal, and the second drive circuit supplies a second selection signal and a third selection signal. The area includes pixels. The pixels include a first pixel circuit, a light-emitting element, a second pixel circuit, and a photoelectric conversion element. The first pixel circuit is supplied with the first selection signal, and acquires an image signal based on the first selection signal. The light-emitting element is electrically connected to the first pixel circuit, and the light-emitting element emits light based on the image signal. The second pixel circuit is supplied with a second selection signal and a third selection signal during a period when the first selection signal is not supplied, and acquires an imaging signal based on the second selection signal and supplies the imaging signal based on the third selection signal. The photoelectric conversion element is electrically connected to the second pixel circuit, and the photoelectric conversion element generates an imaging signal.

[0004] WO2020 / 152556

[0005] An object of one embodiment of the present invention is to provide a novel photoelectric conversion device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel display device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel electronic device with excellent convenience, usefulness, or reliability.An object of one embodiment of the present invention is to provide a novel photoelectric conversion device, a novel display device, a novel electronic device, or a novel semiconductor device.

[0006] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0007] (1) One embodiment of the present invention is a photoelectric conversion device including a first electrode, a second electrode, and a first unit.

[0008] The first unit is sandwiched between a first electrode and a second electrode, the first unit comprising a first layer and a second layer, the first layer being sandwiched between the second electrode and the second layer.

[0009] The first layer includes a first organic compound ETM, which has an electron transport property and a LUMO level at a first level LUMO1.

[0010] The second layer includes a second organic compound CTM, which emits delayed fluorescence at room temperature and has a LUMO level at a second level LUMO2, where the difference between the second level LUMO2 and the first level LUMO1 is 1.0 eV or less.

[0011] This allows for intramolecular charge transfer to be induced in the second organic compound CTM that has absorbed light and entered an excited state. Furthermore, the lifetime of the excited state can be extended. Furthermore, the efficiency of charge separation can be increased. Furthermore, a photocurrent derived from intramolecular charge transfer can be obtained. Furthermore, the efficiency of converting irradiated light into electric current can be increased. Furthermore, the organic compound CTM can be deposited at a lower temperature than fullerenes, etc. Furthermore, electrons can be easily transferred from the second layer to the first layer. Furthermore, the operating voltage of the photoelectric conversion device can be reduced. As a result, a novel photoelectric conversion device with excellent convenience, usefulness, and reliability can be provided.

[0012] (2) Another embodiment of the present invention is the photoelectric conversion device described above, in which the second layer contains a third organic compound AM, and the third organic compound AM has an electron accepting property with respect to the second organic compound.

[0013] (3) Another embodiment of the present invention is a photoelectric conversion device in which the second layer includes a third layer and a fourth layer.

[0014] The third layer is sandwiched between the first layer and the fourth layer, the third layer is in contact with the fourth layer, and the third layer includes a third organic compound AM, and the fourth layer includes a second organic compound CTM.

[0015] This can promote charge transfer from the second organic compound CTM, which has absorbed light and entered an excited state, to the third organic compound AM. It can also promote the generation of excitons accompanying charge transfer. It can also increase the efficiency of charge separation. It can also increase the efficiency of converting irradiated light into electric current. It can also widen the wavelength band of light absorbed by the second layer. It can also adjust the spectral sensitivity characteristics. It can also convert irradiated light into electric current. As a result, it is possible to provide a novel photoelectric conversion device that is excellent in convenience, usefulness, and reliability.

[0016] (4) Another embodiment of the present invention is the above photoelectric conversion device, in which the second organic compound CTM has a structure represented by the following general formula (G0):

[0017]

[0018] However, in the above general formula (G0), A １ represents an amine skeleton or a carbazolyl group, and the amine skeleton has an aryl group or a heteroaryl group. The amine skeleton may have multiple aryl groups only, multiple heteroaryl groups only, or both aryl groups and heteroaryl groups, and in this case, the aryl groups, the heteroaryl groups, or the aryl groups and the heteroaryl groups may be bonded to each other to form a fused ring. The aryl groups are substituted or unsubstituted, and the heteroaryl groups are substituted or unsubstituted. The carbazolyl group is substituted or unsubstituted.

[0019] Ar represents a substituted or unsubstituted arylene group having 6 to 25 carbon atoms or a substituted or unsubstituted heteroarylene group having 2 to 25 carbon atoms. Ar may be composed of a plurality of aromatic rings, and in this case, the plurality of aromatic rings may be bonded to each other to form a fused ring.

[0020] A ２ represents an arylene group having 6 to 25 carbon atoms. The arylene group has at least one substituent, and the substituent is a cyano group, a substituted or unsubstituted acyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted haloalkyl group, a substituted or unsubstituted cycloalkoxy group, or a substituted or unsubstituted cycloalkyl group. The alkoxy group has 1 to 6 carbon atoms, the haloalkyl group has 1 to 6 carbon atoms, and the cycloalkoxy group has 3 to 8 carbon atoms.

[0021] Furthermore, i is an integer of 1 or more and 5 or less, j is an integer of 0 or more and 2 or less, and k is an integer of 1 or more and 6 or less.

[0022] (5) Another embodiment of the present invention is the above photoelectric conversion device, in which the second organic compound CTM has a structure represented by the following general formula (G0):

[0023]

[0024] However, in the above general formula (G0), A １represents an amine skeleton or a carbazolyl group, and the amine skeleton has an aryl group or a heteroaryl group. The amine skeleton may have a plurality of aryl groups only, a plurality of heteroaryl groups only, or an aryl group and a heteroaryl group, and in this case, the aryl groups, the heteroaryl groups, or the aryl group and the heteroaryl group may be bonded to each other to form a fused ring. The aryl group may be substituted or unsubstituted, and the heteroaryl group may be substituted or unsubstituted. The carbazolyl group may be substituted or unsubstituted.

[0025] Ar represents a substituted or unsubstituted arylene group having 6 to 25 carbon atoms or a substituted or unsubstituted heteroarylene group having 2 to 25 carbon atoms. Ar may be composed of a plurality of aromatic rings, and in this case, the plurality of aromatic rings may be bonded to each other to form a fused ring.

[0026] A ２ represents a substituted or unsubstituted heteroaryl group having 2 to 25 carbon atoms or a substituted or unsubstituted heteroarylene group having 2 to 25 carbon atoms.

[0027] Furthermore, i is an integer of 1 or more and 5 or less, j is an integer of 0 or more and 2 or less, and k is an integer of 1 or more and 6 or less.

[0028] This allows for intramolecular charge transfer to be induced in the organic compound CTM that has absorbed light and entered an excited state. Furthermore, the efficiency of charge separation can be increased. Furthermore, photocurrent resulting from intramolecular charge transfer can be obtained. Furthermore, the efficiency of converting irradiated light into current can be increased. Furthermore, the organic compound CTM can be deposited at a lower temperature than fullerenes, etc. Furthermore, irradiated light can be converted into current. As a result, a novel photoelectric conversion device that is excellent in convenience, usefulness, and reliability can be provided.

[0029] (6) Another embodiment of the present invention is a display device having a set of pixels.

[0030] The set of pixels includes a first pixel and a second pixel, the first pixel including a light-emitting device and the second pixel including the above-mentioned photoelectric conversion device, wherein the light-emitting device is adjacent to the photoelectric conversion device.

[0031] (7) Another embodiment of the present invention is a display device including a first functional layer and a second functional layer, wherein the first functional layer overlaps with the second functional layer.

[0032] The first pixel includes a first pixel circuit electrically connected to the light-emitting device, and the second pixel includes a second pixel circuit electrically connected to the photoelectric conversion device.

[0033] The first functional layer includes a photoelectric conversion device and the light emitting device, and the second functional layer includes a first pixel circuit and a second pixel circuit.

[0034] (8) Another embodiment of the present invention is the display device described above, wherein the light-emitting device includes a third electrode, a fourth electrode, and a second unit.

[0035] The second unit is sandwiched between the third electrode and the fourth electrode, and the second unit comprises a fifth layer, a sixth layer and the first layer.

[0036] The fifth layer is sandwiched between the sixth layer and the first layer, the fifth layer including a light-emitting material.

[0037] The sixth layer is sandwiched between the fifth layer and the third electrode, and the sixth layer comprises a hole-transporting material.

[0038] The first layer is sandwiched between the fourth electrode and the fifth layer.

[0039] This makes it possible to emit light, display images, convert irradiated light into current, and capture images. As a result, it is possible to provide a novel device that is highly convenient, useful, and reliable.

[0040] In the drawings accompanying this specification, components are classified by function and shown as block diagrams that are independent of each other, but in reality, it is difficult to completely separate components by function, and one component may be involved in multiple functions.

[0041] According to one embodiment of the present invention, a novel photoelectric conversion device with excellent convenience, usefulness, or reliability can be provided. Alternatively, a novel display device with excellent convenience, usefulness, or reliability can be provided. Alternatively, a novel electronic device with excellent convenience, usefulness, or reliability can be provided. Alternatively, a novel photoelectric conversion device, a novel display device, a novel electronic device, or a novel semiconductor device can be provided.

[0042] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other effects from the description in the specification, drawings, claims, etc.

[0043] FIGS. 1A and 1B are diagrams illustrating a structure of a photoelectric conversion device of one embodiment of the present invention, and FIG. 1C is a diagram illustrating energy levels of materials used in the photoelectric conversion device of one embodiment of the present invention. FIGS. 2A and 2B are diagrams illustrating a structure of a display device of one embodiment of the present invention. FIGS. 3A to 3C are diagrams illustrating a structure of a device of one embodiment of the present invention. FIG. 4 is a diagram illustrating a structure of a device of one embodiment of the present invention. FIG. 5 is a circuit diagram illustrating a structure of a device of one embodiment of the present invention. FIG. 6 is a circuit diagram illustrating a structure of a device of one embodiment of the present invention. FIGS. 7A and 7B are circuit diagrams illustrating a structure of a device of one embodiment of the present invention. FIGS. 8A and 8B are cross-sectional perspective views illustrating an imaging device. FIG. 9 is a cross-sectional view illustrating a pixel. FIGS. 10A to 10F are perspective views of a package and a module that accommodate an imaging device. FIGS. 11A to 11F are diagrams illustrating an electronic device. FIGS. 12A and 12B are diagrams illustrating a structure of a device according to an example. FIG. 13 is a diagram illustrating the spectral sensitivity characteristics of a device according to an example. Fig. 14 is a diagram illustrating the voltage-current density characteristics of the device according to the example in a state where light is irradiated. Fig. 15 is a diagram illustrating the voltage-current density characteristics of the device according to the example in a state where light is not irradiated. Fig. 16 is a diagram illustrating the spectral sensitivity characteristics of the device according to the example. Fig. 17 is a diagram illustrating the voltage-current density characteristics of the device according to the example in a state where light is irradiated. Fig. 18 is a diagram illustrating the voltage-current density characteristics of the device according to the example in a state where light is not irradiated.

[0044] A photoelectric conversion device according to one embodiment of the present invention includes a first electrode, a second electrode, and a unit. The unit is sandwiched between the first electrode and the second electrode, and the unit includes a first layer and a second layer, and the first layer is sandwiched between the second electrode and the second layer. The first layer includes a first organic compound ETM, which has electron-transporting properties and a LUMO level at a first level LUMO1. The second layer includes a second organic compound CTM, which emits delayed fluorescence at room temperature and has a LUMO level at a second level LUMO2. The difference between the second level LUMO2 and the first level LUMO1 is 1.0 eV or less.

[0045] This allows for intramolecular charge transfer to be induced in the second organic compound CTM that has absorbed light and entered an excited state. Furthermore, the lifetime of the excited state can be extended. Furthermore, the efficiency of charge separation can be increased. Furthermore, a photocurrent derived from intramolecular charge transfer can be obtained. Furthermore, the efficiency of converting irradiated light into current can be increased. Furthermore, the transfer of electrons from the second layer to the first layer can be facilitated. Furthermore, the operating voltage of the photoelectric conversion device can be reduced. As a result, a novel photoelectric conversion device that is excellent in convenience, usefulness, and reliability can be provided.

[0046] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be denoted by the same reference numerals in different drawings, and repeated explanations will be omitted.

[0047] Embodiment 1 In this embodiment, a structure of a photoelectric conversion device 550S of one embodiment of the present invention will be described with reference to FIGS. 1A to 1C.

[0048] 1A is a cross-sectional view illustrating a structure of a photoelectric conversion device of one embodiment of the present invention, and FIG. 1B is a cross-sectional view illustrating a structure of a photoelectric conversion device of one embodiment of the present invention, which has a structure different from that of FIG. 1A. Furthermore, FIG. 1C is a diagram illustrating energy levels of materials used in the photoelectric conversion device of one embodiment of the present invention.

[0049] <Configuration Example of Photoelectric Conversion Device 550S> A photoelectric conversion device 550S described in this embodiment includes an electrode 551S, an electrode 552S, and a unit 103S (see FIG. 1A). The electrode 552S overlaps with the electrode 551S, and the unit 103S is sandwiched between the electrode 552S and the electrode 551S.

[0050] <Configuration Example of Unit 103S> The unit 103S absorbs light hv and supplies electrons to one electrode and holes to the other electrode. For example, the unit 103S supplies holes to the electrode 551S and electrons to the electrode 552S.

[0051] Unit 103S has a single layer structure or a laminated structure. For example, unit 103S includes layer 114S, layer 112, and layer 113. Layer 114S is sandwiched between layer 112 and layer 113. Layer 113 is sandwiched between electrode 552S and layer 114S, and layer 112 is sandwiched between layer 114S and electrode 551S.

[0052] For example, a layer selected from functional layers such as a photoelectric conversion layer, an electron transport layer, a hole transport layer, and a carrier block layer can be used in the unit 103S.

[0053] <<Configuration Example of Layer 113>> The layer 113 includes an organic compound ETM. The organic compound ETM has an electron transport property and has a lowest unoccupied molecular orbital (LUMO) level at a LUMO1 level (see FIG. 1C ). Note that the organic compound ETM has a LUMO level of −2 eV or less. This allows the layer 113 to have electron transport property.

[0054] The LUMO level and HOMO level of an organic compound can be derived from its electrochemical properties (reduction potential and oxidation potential) or optical properties (ionization potential and optical band gap). Specifically, the reduction potential and oxidation potential can be measured using cyclic voltammetry (CV) measurement. It is known that the reduction potential corresponds to the LUMO level, and the oxidation potential corresponds to the HOMO level. The ionization potential and optical band gap can also be measured using photoelectron spectroscopy and ultraviolet-visible spectroscopy. The HOMO level can be determined by adding the optical band gap value (eV) to the HOMO level. The LUMO level can be estimated by adding the optical band gap value (eV) to the HOMO level. For organic compounds in which absorption from the ground state to the excited triplet state is observed, cyclic voltammetry (CV) measurement is suitable, while photoelectron spectroscopy and ultraviolet-visible spectroscopy are suitable for organic compounds that are poorly soluble in solvents. When comparing the LUMO levels of a plurality of organic compounds, values ​​derived using the same measurement method are used.

[0055] For example, a material having an electron-transporting property, a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113. The layer 113 can also be referred to as an electron-transporting layer.

[0056] [Electron-Transporting Material] For example, a metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.

[0057] Examples of metal complexes include bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ２ ), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), and the like can be used.

[0058] Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include heterocyclic compounds having a polyazole skeleton, heterocyclic compounds having a diazine skeleton, heterocyclic compounds having a pyridine skeleton, and heterocyclic compounds having a triazine skeleton. In particular, heterocyclic compounds having a diazine skeleton or heterocyclic compounds having a pyridine skeleton are preferred because of their high reliability. Furthermore, heterocyclic compounds having a diazine (pyrimidine or pyrazine) skeleton have high electron transport properties and can reduce driving voltage.

[0059] Examples of heterocyclic compounds having a polyazole skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: O XD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and the like can be used.

[0060] Examples of heterocyclic compounds having a diazine skeleton include 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), and 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II). ]quinoxaline (abbreviation: 2mCzBPDBq), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzo[h]quinazoline (abbreviation: 4,8mDBtP2Bqn), etc. can be used.

[0061] Examples of heterocyclic compounds having a pyridine skeleton include 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), and the like.

[0062] Examples of heterocyclic compounds having a triazine skeleton include 2-[3′-(9,9-dimethyl-9H-fluoren-2-yl)-1,1′-biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 2-[(1,1′-biphenyl)-4-yl]-4-phenyl-6-[9,9′-spirobi(9H-fluoren)-2-yl]-1,3,5-triazine (abbreviation: BP- SFTzn), 2-{3-[3-(benzo“b”naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo“b”naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), and the like can be used.

[0063] [Material Having an Anthracene Skeleton] An organic compound having an anthracene skeleton can be used for the layer 113. In particular, an organic compound having both an anthracene skeleton and a heterocyclic skeleton can be preferably used.

[0064] For example, an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton can be used. Alternatively, an organic compound containing both an anthracene skeleton and a nitrogen-containing five-membered ring skeleton containing two heteroatoms in the ring can be used. Specifically, a pyrazole ring, an imidazole ring, an oxazole ring, a thiazole ring, or the like can be suitably used as the heterocyclic skeleton.

[0065] For example, an organic compound containing both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton can be used. Alternatively, an organic compound containing both an anthracene skeleton and a nitrogen-containing six-membered ring skeleton containing two heteroatoms in the ring can be used. Specifically, a pyrazine ring, a pyrimidine ring, a pyridazine ring, or the like can be suitably used as the heterocyclic skeleton.

[0066] [Configuration Example of Mixed Material] A material in which a plurality of substances are mixed can be used for the layer 113. Specifically, a mixed material containing an alkali metal, an alkali metal compound, or an alkali metal complex, and a substance having an electron-transporting property can be used for the layer 113.

[0067] The alkali metal, alkali metal compound, or alkali metal complex is preferably present with a concentration difference (including zero) in the thickness direction of the layer 113 .

[0068] For example, a metal complex containing an 8-hydroxyquinolinato structure can be used. Also, a methyl-substituted metal complex containing an 8-hydroxyquinolinato structure (for example, a 2-methyl-substituted or 5-methyl-substituted metal complex) can be used.

[0069] Examples of usable metal complexes containing an 8-hydroxyquinolinato structure include 8-hydroxyquinolinato-lithium (abbreviation: Liq), 8-hydroxyquinolinato-sodium (abbreviation: Naq), etc. In particular, complexes of monovalent metal ions, especially lithium complexes, are preferred, with Liq being more preferred.

[0070] <<Configuration Example 1 of Layer 114S>> The layer 114S includes an organic compound CTM. The organic compound CTM emits delayed fluorescence at room temperature and has a LUMO level at a level LUMO2 (see FIG. 1C ). The difference between the level LUMO2 and the level LUMO1 is 1.0 eV or less.

[0071] This can induce intramolecular charge transfer in the organic compound CTM that has absorbed light and entered an excited state. Furthermore, the lifetime of the excited state can be extended. Furthermore, the efficiency of charge separation can be increased. Furthermore, a photocurrent derived from intramolecular charge transfer can be obtained. Furthermore, the efficiency of converting irradiated light into electric current can be increased. Furthermore, the transfer of electrons from layer 114S to layer 113 can be facilitated. Furthermore, the operating voltage of the photoelectric conversion device can be reduced. As a result, a novel photoelectric conversion device that is excellent in convenience, usefulness, and reliability can be provided.

[0072] [Configuration Example of Organic Compound CTM] The organic compound CTM has a structure represented by the following general formula (G0).

[0073]

[0074] [A １ In the above general formula (G0), A １ represents an amine skeleton or a carbazolyl group.

[0075] A １ is an amine skeleton, the amine skeleton has an aryl group or a heteroaryl group. The amine skeleton may have a plurality of aryl groups only, a plurality of heteroaryl groups only, or an aryl group and a heteroaryl group. In this case, the aryl groups, the heteroaryl groups, or the aryl group and the heteroaryl group may be bonded to each other to form a fused ring.

[0076] The aryl group substituting the amine skeleton may be substituted or unsubstituted, and the heteroaryl group substituting the amine skeleton may be substituted or unsubstituted.

[0077] A １When the amine skeleton is an amine skeleton, for example, an aryl group having the following structure can be used as a substituent substituted on the amine skeleton.

[0078]

[0079] A １ When the amine skeleton is an amine skeleton, for example, a heteroaryl group having the following structure can be used as a substituent substituted on the amine skeleton.

[0080]

[0081] For example, the substituent having an amine skeleton shown in the following structure may be A １ It can be used for.

[0082]

[0083]

[0084] A １ When is a carbazolyl group, the carbazolyl group is substituted or unsubstituted.

[0085] For example, the carbazolyl group shown in the following structure may be １ It can be used for.

[0086]

[0087] [Examples of Ar] In addition, in the above general formula (G0), Ar represents a substituted or unsubstituted arylene group having 6 to 25 carbon atoms or a substituted or unsubstituted heteroarylene group having 2 to 25 carbon atoms. Note that Ar may be composed of a plurality of aromatic rings, and in this case, the plurality of aromatic rings may be bonded to each other to form a fused ring or a spiro ring.

[0088] For example, the following substituents can be used for Ar:

[0089]

[0090] [A ２ In addition, in the general formula (G0), A ２ represents an arylene group having 6 to 25 carbon atoms. The arylene group has at least one substituent.

[0091] The substituents on the arylene group are a cyano group, a substituted or unsubstituted acyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted haloalkyl group, a substituted or unsubstituted cycloalkoxy group, or a substituted or unsubstituted cycloalkyl group, wherein the alkoxy group has 1 to 6 carbon atoms, the haloalkyl group has 1 to 6 carbon atoms, and the cycloalkoxy group has 3 to 8 carbon atoms.

[0092] For example, the substituent having the following structure is A ２ It can be used for.

[0093]

[0094] [A ２ In addition, in the general formula (G0), A ２ represents a mono- to hexavalent substituted or unsubstituted heteroaryl group having 2 to 25 carbon atoms.

[0095] The heteroaryl group or heteroarylene group is, for example, one selected from a triazinyl group, a 2,3-dicyanodibenzo[f,h]quinoxaline-7,10-diyl group, a 4-benzofuro[3,2-d]pyrimidinyl group, a 5,10-dihydroboranthrene-5,10-diyl group, a bis(3-pyridinyl)methanone-4,4′-diyl group, a 9,9-dimethyl-9H-thioxanthene-10,10-dioxide-2,7-diyl group, and a 6,7-diphenyl[1,2,5]thiadiazolo[3,4-g]quinoxaline-4,9-diyl group.

[0096] For example, the substituent having the following structure is A ２ It can be used for.

[0097]

[0098] [Examples of i, j, and k] In the general formula (G0), i is an integer of 1 or more and 5 or less, j is an integer of 0 or more and 2 or less, and k is an integer of 1 or more and 6 or less.

[0099] [Specific Examples of Organic Compound CTM] Examples of organic compounds having the above structure include 9,9',9'',9'''-(1,3-dicyanobenzene-2,4,5,6-tetraaryl)tetrakis(9H-carbazole) (abbreviation: 4CzIPN), 8-(dibenzothiophen-4-yl)-4-phenyl-2-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)-[1]benzofuro[3,2-d]pyrifluoromethyl-2-(4CzIPN), and 8-(dibenzothiophen-4-yl)-4-phenyl-2-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)-[1]benzofuro[3,2-d]pyrifluoromethyl-2-( ... 8-(dibenzothiophen-4-yl)-4-phenyl-2-(9'-phenyl-3,3'-bi-9H-carbazole-9-yl)-[1]benzofuro[3,2-d]pyrifluoromethyl-2-(4CzIPN), 8-(dibenzothiophen- tiridine (abbreviation: 4Ph-8DBt-2PCCzBfpm), 9,9',9''-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(3,6-dimethyl-9H-carbazole) (abbreviation: TmCzTrz), 3',3''',6',6'''-tetraphenyl-9,9',9'',9'''',9''''-(cyanobenzene-2,3, 4,5,6-pentyl)pentakis(9H-carbazole) (abbreviation: 3Cz2DPhCzBN), 3,6-bis(diphenylamino)-9-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9H-carbazole (abbreviation: DACT-II), 4-[3-(N,N-diphenylamino)carbazol-9-yl]benzofuro[3,2-d]pyrimidine (abbreviation: 4DPhACzBfpm), 4-[3,6-bis(N,N-diphenylamino)carbazol-9-yl]benzofuro[3,2-d]pyrimidine (abbreviation: 4DPhA2CzBfpm), 8-phenyl-4-[3,6-bis(N,N-diphenylamino)carbazol-9-yl]benzofuro[3,2-d]pyrimidine (abbreviation: 8Ph-4DPhA2CzBfpm), etc. can be used.

[0100]

[0101]

[0102] <<Configuration Example 2 of Layer 114S>> The layer 114S includes an organic compound CTM and an organic compound AM, and the organic compound AM has an electron accepting property with respect to the organic compound CTM.

[0103] This can promote charge transfer. It can also promote the generation of excitons accompanying charge transfer. It can also increase the efficiency of charge separation. It can also increase the efficiency of converting irradiated light into electric current. It can also widen the wavelength band of light absorbed by layer 114S. It can also adjust the spectral sensitivity characteristics. It can also convert irradiated light into electric current. As a result, it is possible to provide a novel photoelectric conversion device that is highly convenient, useful, and reliable.

[0104]

[0047] Examples of the substituents that can be used in the aryl group, heteroaryl group, carbasolyl group, arylene group, heteroarylene group, acyl group, alkoxy group, haloalkyl group, cycloalkoxy group, cycloalkyl group, and the like include alkyl groups, substituted or unsubstituted cycloalkyl groups, substituted or unsubstituted aromatic hydrocarbon groups, and substituted or unsubstituted heteroaromatic hydrocarbon groups.

[0105] The alkyl group may be an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, or an n-hexyl group.

[0106] The cycloalkyl group may be a cycloalkyl group having 3 to 10 carbon atoms, such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, or an adamantyl group.

[0107] The aromatic hydrocarbon group may have from 6 to 30 carbon atoms, such as a phenyl group, a naphthyl group, a biphenyl group, a fluorenyl group, or a spirofluorenyl group.

[0108] The heteroaromatic hydrocarbon group may have from 2 to 30 carbon atoms, such as a pyridine ring, a pyrimidine ring, a pyrazine ring, a pyridazine ring, a triazine ring, a quinoline ring, a quinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a phenanthroline ring, an azafluoranthene ring, an imidazole ring, an oxazole ring, an oxadiazole ring, or a triazole ring.

[0109] [Examples of Electron Accepting Materials] For example, fullerene derivatives, non-fullerene electron acceptors, etc. can be used as the electron accepting material.

[0110] Examples of electron-accepting materials include C ６０ Fullerene, C ７０ Examples of compounds that can be used include fullerene, [6,6]-phenyl-C71-butyric acid methyl ester (abbreviation: PC71BM), [6,6]-phenyl-C61-butyric acid methyl ester (abbreviation: PC61BM), 1',1",4',4"-tetrahydro-di[1,4]methanonaphthaleno[1,2:2',3',56,60:2",3"][5,6]fullerene-C60 (abbreviation: ICBA), and 2,8-dimethylanthra[2,3-b:6,7-b']dithiophene (abbreviation: anti-DMADT).

[0111] Examples of non-fullerene electron acceptors that can be used include perylene derivatives, compounds having a dicyanomethyleneindanone group, and N,N'-dimethyl-3,4,9,10-perylenedicarboximide (abbreviation: Me-PTCDI).

[0112] <<Structure Example 3 of Layer 114S>> For example, a stacked structure can be used for the layer 114S. Specifically, a heterojunction structure can be used for the layer 114S.

[0113] [Example of Heterojunction] Layer 114N and layer 114P can be used for layer 114S. Layer 114N is sandwiched between one electrode and layer 114P, and layer 114P is sandwiched between layer 114N and the other electrode. For example, layer 114N is sandwiched between electrode 552S and layer 114P, and layer 114P is sandwiched between layer 114N and electrode 551S (see FIG. 1B).

[0114] An organic compound AM can be used for the layer 114N.

[0115] Additionally, an organic compound CTM can be used for the layer 114P.

[0116] <Structure Example of Layer 112> For example, a material having a hole-transporting property can be used for the layer 112. The layer 112 can also be referred to as a hole-transporting layer.

[0117] [Material having hole transport properties] A material having a hole mobility of 1×10 −６ cm ２ A material having a hole transporting property can be suitably used as a material having a hole transporting property.

[0118] For example, an amine compound or an organic compound having a π-electron-rich heteroaromatic ring skeleton can be used as a material having hole transport properties. Specifically, a compound having an aromatic amine skeleton, a compound having a carbazole skeleton, a compound having a thiophene skeleton, a compound having a furan skeleton, or the like can be used. In particular, a compound having an aromatic amine skeleton or a compound having a carbazole skeleton is preferable because it has good reliability, high hole transport properties, and contributes to reducing driving voltage.

[0119] Examples of compounds having an aromatic amine skeleton include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9,9'-bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP). , 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBiBP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), and the like can be used.

[0120] Examples of compounds having a carbazole skeleton that can be used include 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 3,3′-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP).

[0121] Examples of compounds having a thiophene skeleton that can be used include 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV).

[0122] Examples of compounds having a furan skeleton that can be used include 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0123] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0124] Embodiment 2 In this embodiment, a structure of a photoelectric conversion device 550S of one embodiment of the present invention will be described with reference to FIGS. 1A and 1B.

[0125] <Structural Example of Photoelectric Conversion Device 550S> The photoelectric conversion device 550S described in this embodiment includes an electrode 551S, an electrode 552S, a unit 103S, and a layer 104. The electrode 552S has a region overlapping with the electrode 551S, and the unit 103S has a region sandwiched between the electrode 551S and the electrode 552S. The layer 104 has a region sandwiched between the electrode 551S and the unit 103S. Note that the structure described in Embodiment 1 can be used for the unit 103S, for example.

[0126] <Structure Example of Electrode 551S> For example, a conductive material can be used for the electrode 551S. Specifically, a single layer or a stacked layer of a film containing a metal, an alloy, or a conductive compound can be used for the electrode 551S.

[0127] For example, a film that efficiently reflects light can be used for the electrode 551S. Specifically, a metal film such as an alloy containing silver and copper, an alloy containing silver and palladium, or aluminum can be used for the electrode 551S.

[0128] Furthermore, for example, a metal film that transmits part of the light and reflects the other part of the light can be used for the electrode 551S.

[0129] For example, a film that transmits visible light can be used for the electrode 551S. Specifically, a single layer or stacked layer of a metal film, an alloy film, a conductive oxide film, or the like that is thin enough to transmit light can be used for the electrode 551S.

[0130] For example, a conductive oxide containing indium can be used, such as indium oxide, indium oxide-tin oxide (abbreviation: ITO), indium oxide-tin oxide containing silicon or silicon oxide (abbreviation: ITSO), indium oxide-zinc oxide, or indium oxide containing tungsten oxide and zinc oxide (abbreviation: IWZO).

[0131] Alternatively, for example, a conductive oxide containing zinc can be used, such as zinc oxide, zinc oxide doped with gallium, or zinc oxide doped with aluminum.

[0132] Alternatively, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or a nitride of a metal material (e.g., titanium nitride) can be used. Alternatively, graphene can be used.

[0133] <Structure Example of Layer 104> For example, the layer 104 can be formed using a material having a hole-injecting property.

[0134] Specifically, a substance having an acceptor property can be used for the layer 104. Alternatively, a composite material containing a plurality of kinds of substances can be used for the layer 104.

[0135] [Substance Having Acceptor Property] Organic compounds and inorganic compounds can be used as the substance having acceptor property. The substance having acceptor property can extract electrons from the adjacent hole transport layer or the material having hole transport property by applying an electric field.

[0136] For example, a compound having an electron-withdrawing group (a halogen group or a cyano group) can be used as the acceptor material. Note that organic compounds having acceptor properties are easy to evaporate and form into films. This can increase the productivity of the photoelectric conversion device 550S.

[0137] Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ４ -TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used.

[0138] In particular, a compound in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms, such as HAT-CN, is thermally stable and is therefore preferred.

[0139] [3] Radialene derivatives having an electron-withdrawing group (particularly a halogen group such as a fluoro group or a cyano group) are also preferred because they have very high electron-accepting properties.

[0140] Specifically, α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], and the like can be used.

[0141] Furthermore, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used as the substance having acceptor properties.

[0142] In addition, phthalocyanine (abbreviation: H ２ and compounds having an aromatic amine skeleton such as 4,4′-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and N,N′-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (abbreviation: DNTPD).

[0143] Furthermore, polymers such as poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonic acid) (PEDOT / PSS) can also be used.

[0144] [Structure Example 1 of Composite Material] For example, a composite material containing a substance having an acceptor property and a material having a hole-transport property can be used for the layer 104.

[0145] For example, compounds having an aromatic amine skeleton, carbazole derivatives, aromatic hydrocarbons, aromatic hydrocarbons having a vinyl group, and polymeric compounds (oligomers, dendrimers, polymers, etc.) can be used as the material having hole transport properties for the composite material. −６ cm ２ A material having a hole transporting property can be suitably used as the material of the composite material.

[0146] Furthermore, a substance having a relatively deep HOMO level can be preferably used as the material having a hole transport property of the composite material. Specifically, the HOMO level is preferably −5.7 eV or more and −5.4 eV or less.

[0147] Examples of compounds having an aromatic amine skeleton that can be used include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis{4-[bis(3-methylphenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0148] Examples of the carbazole derivative include 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole, and carbazole (abbreviation: PCzPCN1), 4,4′-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6-tetraphenylbenzene, and the like can be used.

[0149] Examples of aromatic hydrocarbons include 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl)anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl-1-naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10 10,10'-bis[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl)phenyl]anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naphthyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl)anthracene, 9,9'-bianthryl, 10,10'-diphenyl-9,9'-bianthryl, 10,10'-bis(2-phenylphenyl)-9,9'-bianthryl, 10,10'-bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bianthryl, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra(tert-butyl)perylene, pentacene, coronene, and the like can be used.

[0150] Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2-diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2-diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA), and the like.

[0151] Examples of polymer compounds that can be used include poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), and poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD).

[0152] For example, a substance having a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton can be suitably used as a material having hole transport properties for the composite material. Furthermore, a substance having an aromatic amine with a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine with a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group can be used as a material having hole transport properties for the composite material. Note that the use of a substance having an N,N-bis(4-biphenyl)amino group can improve the reliability of the photoelectric conversion device 550S.

[0153] Examples of these materials include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4′-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4″-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2 -d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl -4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-0 3), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4′-[4′-(3-phenyl-9H-carbazol-9-yl)phenyl]tris(αNBB1BP), 4,4′-[4 ... 1,1'-biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-diphenyl-4'-(2-naphthyl)-4''-{9-(4-biphenylyl)carbazole)}triphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis(4-biphenylyl)-9 ,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(1,1'-biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(1,1'-biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(4-biphenyl)-N-(dibenzofuran-4-yl)-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenyl 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluoren-2-amine (abbreviation: PCBASF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), N,N-bis(9,9- N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, etc. can be used.

[0154] [Structure Example 2 of Composite Material] For example, a composite material containing a substance having an acceptor property, a material having a hole-transport property, and an alkali metal fluoride or an alkaline earth metal fluoride can be used as the material having a hole-injection property. In particular, a composite material in which fluorine atoms account for 20% or more in atomic ratio can be preferably used. This can reduce the refractive index of the layer 104.

[0155] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0156] Embodiment 3 In this embodiment, a structure of a photoelectric conversion device 550S of one embodiment of the present invention will be described with reference to FIGS. 1A and 1B.

[0157] <Structural Example of Photoelectric Conversion Device 550S> The photoelectric conversion device 550S described in this embodiment includes an electrode 551S, an electrode 552S, a unit 103S, and a layer 105. The electrode 552S has a region overlapping with the electrode 551S, and the unit 103S has a region sandwiched between the electrode 551S and the electrode 552S. The layer 105 has a region sandwiched between the unit 103S and the electrode 552S. Note that the structure described in Embodiment 1 can be used for the unit 103S, for example.

[0158] <Structure Example of Electrode 552S> For example, a conductive material can be used for the electrode 552S. Specifically, a material containing a metal, an alloy, or a conductive compound can be used as a single layer or a stacked layer for the electrode 552S.

[0159] For example, the material that can be used for the electrode 551S described in Embodiment 2 can be used for the electrode 552S. In particular, a material having a work function smaller than that of the electrode 551S can be suitably used for the electrode 552S. Specifically, a material having a work function of 3.8 eV or less is preferable.

[0160] For example, elements belonging to Group 1 of the periodic table, elements belonging to Group 2 of the periodic table, rare earth metals, and alloys containing these can be used for the electrode 552S.

[0161] Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), strontium (Sr), europium (Eu), ytterbium (Yb), and alloys containing these (MgAg, AlLi) can be used for the electrode 552S.

[0162] <Structure Example of Layer 105> For example, the layer 105 can be formed using a material having an electron injecting property.

[0163] Specifically, a substance having donor properties can be used for the layer 105. Alternatively, a composite material of a substance having donor properties and a material having electron-transporting properties can be used for the layer 105. Alternatively, an electride can be used for the layer 105. Alternatively, not only a material having a low work function but also a material having a high work function can be used for the electrode 552S. Alternatively, a material for the electrode 552S can be selected from a wide range of materials regardless of the work function. Specifically, Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, or the like can be used for the electrode 552S.

[0164] [Substance Having Donor Properties] For example, alkali metals, alkaline earth metals, rare earth metals, or compounds thereof (oxides, halides, carbonates, etc.) can be used as the substance having donor properties. Alternatively, organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene can also be used as the substance having donor properties.

[0165] Examples of alkali metal compounds (including oxides, halides, and carbonates) that can be used include lithium oxide, lithium fluoride (LiF), cesium fluoride (CsF), lithium carbonate, cesium carbonate, and 8-hydroxyquinolinato-lithium (abbreviated as Liq).

[0166] Alkaline earth metal compounds (including oxides, halides, and carbonates) include calcium fluoride (CaF ２ ), etc. can be used.

[0167] [Configuration Example 1 of Composite Material] A composite material of a plurality of substances can be used as a material having an electron injecting property. For example, a material having a donor property and a material having an electron transport property can be used as a composite material.

[0168] [Electron-Transporting Material] For example, a metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.

[0169] For example, the material having an electron-transporting property which can be used for the layer 112, which is described in Embodiment 1, can be used for the composite material.

[0170] [Configuration Example 2 of Composite Material] For example, a composite material containing a first organic compound having an unshared electron pair and a first metal can be used for the layer 105. The sum of the number of electrons in the first organic compound and the number of electrons in the first metal is preferably an odd number. The molar ratio of the first metal to 1 mole of the first organic compound is preferably 0.1 to 10, more preferably 0.2 to 2, and even more preferably 0.2 to 0.8.

[0171] As a result, the first organic compound having an unshared electron pair can interact with the first metal to form a Singly Occupied Molecular Orbital (SOMO). In addition, since the first metal has low reactivity with water or oxygen, the moisture resistance of the photoelectric conversion device 550S can be improved.

[0172] The spin density measured by electron spin resonance (ESR) is preferably 1×10 １６ spins / cm ３ or more, more preferably 5 × 10 １６ spins / cm ３ More preferably, 1×10 １７ spins / cm ３ The above composite material can be used for the layer 105 .

[0173] [Organic Compound Having an Unshared Electron Pair] For example, a material having electron transport properties can be used as the organic compound having an unshared electron pair. For example, a compound having an electron-deficient heteroaromatic ring can be used. Specifically, a compound having at least one of a pyridine ring, a diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and a triazine ring can be used. This can reduce the driving voltage of the photoelectric conversion device 550S.

[0174] The organic compound having an unshared electron pair preferably has a lowest unoccupied molecular orbital (LUMO) level of −3.6 eV to −2.3 eV. Generally, the HOMO level and LUMO level of an organic compound can be estimated by cyclic voltammetry (CV), photoelectron spectroscopy, optical absorption spectroscopy, inverse photoelectron spectroscopy, or the like.

[0175] For example, 4,7-diphenyl-1,10-phenanthroline (abbreviation: BPhen), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), etc. can be used as the organic compound having an unshared electron pair. Note that NBPhen has a higher glass transition temperature (Tg) and is superior in heat resistance compared to BPhen.

[0176] Furthermore, for example, copper phthalocyanine, which has an odd number of electrons, can be used as the organic compound having an unshared electron pair.

[0177] [First Metal] For example, when the number of electrons in the first organic compound having an unshared electron pair is even, a composite material of the first organic compound and a metal belonging to an odd group in the periodic table can be used for the layer 105.

[0178] For example, manganese (Mn), a Group 7 metal, cobalt (Co), a Group 9 metal, copper (Cu), silver (Ag), and gold (Au), which are Group 11 metals, and aluminum (Al) and indium (In), which are Group 13 metals, belong to odd-numbered groups in the periodic table. The elements of Group 11 have lower melting points than the elements of Groups 7 and 9, making them suitable for vacuum deposition. Ag is particularly preferred due to its low melting point.

[0179] By using Ag for the electrode 552S and the layer 105, the adhesion between the layer 105 and the electrode 552S can be improved.

[0180] When the number of electrons in the first organic compound having an unshared electron pair is odd, a composite material of the first metal and the first organic compound that belong to an even group in the periodic table can be used for the layer 105. For example, iron (Fe), which is a metal in Group 8 of the periodic table, belongs to an even group in the periodic table.

[0181] [Electride] For example, a substance in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration can be used as a material having electron injection properties.

[0182] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0183] Embodiment 4 In this embodiment, a structure of a device 700 according to one embodiment of the present invention will be described with reference to FIGS. 2A and 2B.

[0184] FIG. 2A is a cross-sectional view illustrating a structure of a device 700 according to one embodiment of the present invention, and FIG. 2B is a cross-sectional view illustrating a structure of the device 700 according to one embodiment of the present invention that is different from that in FIG. 2A .

[0185] <Configuration Example 1 of Device 700> The device 700 described in this embodiment includes a light-emitting device 550X(i,j) and a photoelectric conversion device 550S(i,j) (see FIG. 2A). The photoelectric conversion device 550S(i,j) is adjacent to the light-emitting device 550X(i,j).

[0186] The device 700 also has an insulating film 521 on which the photoelectric conversion device 550S(i,j) and the light-emitting device 550X(i,j) are formed.

[0187] Configuration Example 1 of Photoelectric Conversion Device 550S(i,j) The photoelectric conversion device 550S(i,j) includes an electrode 551S(i,j), an electrode 552S(i,j), and a unit 103S(i,j). The photoelectric conversion device 550S(i,j) also includes a layer 104 and a layer 105.

[0188] For example, the photoelectric conversion device described in any of Embodiments 1 to 3 can be used for the photoelectric conversion device 550S(i,j). Specifically, a structure that can be used for the electrode 551S can be used for the electrode 551S(i,j). In particular, a material having a work function of 4.0 eV or more can be suitably used for the electrode 551S(i,j).

[0189] Furthermore, the configuration that can be used for the unit 103S can be used for the unit 103S(i, j).

[0190] For example, a structure that can be used for the layer 104 described in Embodiment 2 can be used for the layer 104 of the light-emitting device described in this embodiment.

[0191] For example, the structure that can be used for the layer 105 described in Embodiment 3 can be used for the layer 105 of the light-emitting device described in this embodiment. The layer 105 can be referred to as an electron-injecting layer.

[0192] <Configuration Example 1 of Light-Emitting Device 550X(i,j)> The light-emitting device 550X(i,j) has an electrode 551X(i,j), an electrode 552X(i,j), and a unit 103X(i,j) (see FIG. 2A ). The electrode 552X(i,j) overlaps with the electrode 551X(i,j), and the unit 103X(i,j) is sandwiched between the electrode 551X(i,j) and the electrode 552X(i,j).

[0193] The electrode 551X(i,j) is adjacent to the electrode 551S(i,j), and there is a gap 551XS(i,j) between the electrode 551X(i,j) and the electrode 551S(i,j).

[0194] For example, the material that can be used for the electrode 551S(i,j) can also be used for the electrode 551X(i,j).

[0195] <<Configuration Example 1 of Unit 103X(i,j)>> The unit 103X(i,j) has a single-layer structure or a laminated structure. For example, the unit 103X(i,j) includes a layer 111X(i,j), a layer 112, and a layer 113 (see FIG. 2A ). The layer 111X(i,j) is sandwiched between the layer 112 and the layer 113, the layer 112 is sandwiched between the electrode 551X(i,j) and the layer 111X(i,j), and the layer 113 is sandwiched between the electrode 552X(i,j) and the layer 111X(i,j).

[0196] For example, the unit 103X(i,j) can be formed of a layer selected from functional layers such as a light-emitting layer, a hole-transporting layer, an electron-transporting layer, a carrier-blocking layer, etc. Also, the unit 103X(i,j) can be formed of a layer selected from functional layers such as a hole-injecting layer, an electron-injecting layer, an exciton-blocking layer, and a charge-generating layer, etc.

[0197] <<Configuration Example 2 of Light-Emitting Device 550X(i,j)>> The light-emitting device 550X(i,j) also includes a layer 104 and a layer 105. The layer 104 is sandwiched between the electrode 551X(i,j) and the unit 103X(i,j), and the layer 105 is sandwiched between the unit 103X(i,j) and the electrode 552X(i,j). The conductive film 552 includes an electrode 552X(i,j) and an electrode 552S(i,j).

[0198] Note that part of the configuration of the photoelectric conversion device 550S(i,j) can be used as part of the configuration of the light-emitting device 550X(i,j). This allows part of the configuration to be shared, and also simplifies the manufacturing process.

[0199] <Configuration Example 2 of Device 700> The device 700 described in this embodiment also has an insulating film 528 (see FIG. 2A).

[0200] <<Configuration Example of Insulating Film 528>> The insulating film 528 has openings, one of which overlaps with the electrode 551S(i, j) and the other of which overlaps with the electrode 551X(i, j).

[0201] <Configuration Example 3 of Device 700> The device 700 described in this embodiment also includes a layer 111X(i, j) (see FIG. 2A or FIG. 2B).

[0202] <<Configuration Example 1 of Layer 111X(i,j)>> For example, a light-emitting material or a light-emitting material and a host material can be used for the layer 111X(i,j). The layer 111X(i,j) can also be referred to as a light-emitting layer. Note that a configuration in which the layer 111X(i,j) is disposed in a region where holes and electrons recombine is preferable. This allows the energy generated by carrier recombination to be efficiently converted into light and emitted. Also, a configuration in which the layer 111X(i,j) is disposed away from metals used for electrodes, etc. is preferable. This allows the quenching phenomenon caused by metals used for electrodes, etc. to be suppressed.

[0203] For example, a light emitting device that emits blue light, a light emitting device that emits green light, and a light emitting device that emits red light can be arranged in the device 700. Also, a light emitting device that emits white light, a light emitting device that emits yellow light, or a light emitting device that emits infrared light can be arranged in the device 700.

[0204] <<Structure Example 2 of Layer 111X(i, j)>> For example, a fluorescent material, a phosphorescent material, or a material exhibiting thermally activated delayed fluorescence (TADF) (also referred to as a TADF material) can be used as the light-emitting material. This allows energy generated by carrier recombination to be emitted from the light-emitting material as light ELX (see FIG. 2A or FIG. 2B ).

[0205] [Fluorescent Material] A fluorescent material can be used for the layer 111X(i,j). For example, the fluorescent materials exemplified below can be used for the layer 111X(i,j). Note that the present invention is not limited to these, and various known fluorescent materials can be used for the layer 111X(i,j).

[0206] Specifically, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2′-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4′-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2′-bipyridine (abbreviation: PAPP2BPy), N,N′-diphenyl-N,N′-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N′-bis(3-methylphenyl)-N,N′-bis[3-(9-phenyl-9H-fluoren- 9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4 -(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPABPA), N ,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAB PhA), 9,10-bis(1,1'-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6 -methyl-4H-pyran-4-ylidene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine amine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJ™), N,N'-(pyren-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1 ,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), and the like can be used.

[0207] In particular, condensed aromatic diamine compounds typified by pyrenediamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole trapping properties and are excellent in luminous efficiency or reliability.

[0208] [Phosphorescent Material] A phosphorescent material can be used for the layer 111X(i,j). For example, the phosphorescent materials exemplified below can be used for the layer 111X(i,j). Note that the present invention is not limited thereto, and various known phosphorescent materials can be used for the layer 111X(i,j).

[0209] For example, organometallic iridium complexes having a 4H-triazole skeleton, organometallic iridium complexes having a 1H-triazole skeleton, organometallic iridium complexes having an imidazole skeleton, organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, organometallic iridium complexes having a pyrimidine skeleton, organometallic iridium complexes having a pyrazine skeleton, organometallic iridium complexes having a pyridine skeleton, rare earth metal complexes, platinum complexes, and the like can be used for the layer 111X(i, j).

[0210] [Phosphorescent Material (Blue)] Examples of organometallic iridium complexes having a 4H-triazole skeleton include tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp) ３ ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz) ３ ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b) ３ ]), etc. can be used.

[0211] Examples of organometallic iridium complexes having a 1H-triazole skeleton include tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) ３ ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me) ３ ]), etc. can be used.

[0212] Examples of organometallic iridium complexes having an imidazole skeleton include fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpmi) ３ ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) ３ ]), etc. can be used.

[0213] Examples of organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand include bis[2-(4′,6′-difluorophenyl)pyridinato-N,C ２’]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C ２’} Iridium(III) picolinate (abbreviation: [Ir(CF ３ ppy) ２ (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ] Iridium (III) acetylacetonate (abbreviation: FIracac), etc. can be used.

[0214] These compounds exhibit blue phosphorescence and have a peak emission wavelength in the range of 440 nm to 520 nm.

[0215] [Phosphorescent Material (Green)] Examples of organometallic iridium complexes having a pyrimidine skeleton include tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ３ ]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ３ ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ２ (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ２ (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm) ２ (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) ２ (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)２ (acac)]), etc. can be used.

[0216] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) ２ (acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) ２ (acac)]), etc. can be used.

[0217] Examples of organometallic iridium complexes having a pyridine skeleton include tris(2-phenylpyridinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(ppy) ３ ]), bis(2-phenylpyridinato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy) ２ (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq) ２ (acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq) ３ ]), tris(2-phenylquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(pq) ３ ]), bis(2-phenylquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq) ２ (acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d3) ２ (mbfpypy-d3)]), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)２ (mbfpypy-d3)]), etc. can be used.

[0218] Examples of rare earth metal complexes include tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac) ３ (Phen)]), etc.

[0219] These compounds mainly exhibit green phosphorescence, with a peak emission wavelength between 500 nm and 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are also remarkably superior in reliability and luminous efficiency.

[0220] [Phosphorescent Material (Red)] Examples of organometallic iridium complexes having a pyrimidine skeleton include (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) ２ (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) ２ (dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(dpm) ２ (dpm)]), etc. can be used.

[0221] Examples of organometallic iridium complexes having a pyrazine skeleton include (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr) ２ (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) ２ (dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) ２ (acac)]), etc. can be used.

[0222] Examples of organometallic iridium complexes having a pyridine skeleton include tris(1-phenylisoquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(piq) ３ ]), bis(1-phenylisoquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) ２ (acac)]), etc. can be used.

[0223] Examples of rare earth metal complexes include tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) ３ (Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) ３ (Phen)]), etc. can be used.

[0224] As the platinum complex, for example, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) can be used.

[0225] These compounds exhibit red phosphorescence, with an emission peak at 600 nm to 700 nm. The organometallic iridium complexes having a pyrazine skeleton emit red light with a chromaticity suitable for use in display devices.

[0226] [Substances Exhibiting Thermally Activated Delayed Fluorescence (TADF)] A TADF material can be used for the layer 111X(i, j). For example, the TADF materials exemplified below can be used as the luminescent material. However, without being limited thereto, various known TADF materials can be used as the luminescent material.

[0227] TADF materials have a small difference between the S1 and T1 levels, allowing reverse intersystem crossing (upconversion) from a triplet excited state to a singlet excited state with a small amount of thermal energy. This allows efficient generation of a singlet excited state from a triplet excited state. Furthermore, the triplet excited energy can be converted into luminescence.

[0228] Furthermore, an exciplex (also called an exciplex) that forms an excited state with two types of substances has an extremely small difference between the S1 level and the T1 level, and functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0229] As an index of the T1 level, for example, a phosphorescence spectrum observed at low temperatures (e.g., 77 K to 10 K) may be used. For example, when a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side, and the energy of the wavelength of the extrapolated line is defined as the S1 level, and a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side, and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0230] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0231] For example, TADF materials can include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. can be used as TADF materials.

[0232] Specifically, protoporphyrin-tin fluoride complex (SnF), whose structural formula is shown below, ２ (Proto IX)), mesoporphyrin-tin fluoride complex (SnF ２ (Meso IX)), hematoporphyrin-tin fluoride complex (SnF２ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ２ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF ２ (OEP)), etioporphyrin-tin fluoride complex (SnF ２ (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl ２ OEP), etc. can be used.

[0233]

[0234] Furthermore, for example, a heterocyclic compound having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used as the TADF material.

[0235] Specifically, the structural formulas of these compounds are as follows: 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4 ,6-diphenyl-1,3,5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10′H-spiro[acridin-9,9′-anthracene]-10′-one (abbreviation: ACRSA), and the like can be used.

[0236]

[0237] The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. In particular, among skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeletons, diazine skeletons (pyrimidine skeletons, pyrazine skeletons, pyridazine skeletons), and triazine skeletons are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because they have high acceptor properties and good reliability.

[0238] Among skeletons having a π-electron-rich heteroaromatic ring, it is preferable to have at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton because they are stable and reliable. The furan skeleton is, for example, preferably a dibenzofuran skeleton, and the thiophene skeleton is, for example, preferably a dibenzothiophene skeleton. The pyrrole skeleton is, for example, particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton.

[0239] In addition, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferred because the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both strong, and the energy difference between the S1 level and the T1 level is small, thereby enabling efficient thermally activated delayed fluorescence to be obtained. In addition, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used instead of the π-electron-deficient heteroaromatic ring. In addition, an aromatic amine skeleton, a phenazine skeleton, or the like may be used as the π-electron-rich skeleton.

[0240] Furthermore, examples of the π-electron-deficient skeleton that can be used include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring or heteroaromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, and a sulfone skeleton.

[0241] In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0242] <<Structure Example 3 of Layer 111X(i,j)>> A material having carrier transport properties can be used as the host material. For example, a material having hole transport properties, a material having electron transport properties, a substance exhibiting thermally activated delayed fluorescence (TADF), a material having an anthracene skeleton, a mixed material, or the like can be used as the host material. Note that a structure using a material having a larger band gap than the light-emitting material contained in the layer 111X(i,j) is preferable. This can suppress energy transfer from excitons generated in the layer 111X(i,j) to the host material.

[0243] [Material having hole transport properties] A material having a hole mobility of 1×10 −６ cm ２ A material having a hole transporting property can be suitably used as a material having a hole transporting property.

[0244] For example, the material having a hole-transporting property which can be used for the layer 112 described in Embodiment 1 can be used for the layer 111X(i,j).

[0245] [Electron-Transporting Material] A metal complex or an organic compound having a π-electron-deficient heteroaromatic ring skeleton can be used as the electron-transporting material.

[0246] For example, the layer 111X(i,j) can be formed using a material having an electron-transport property that can be used for the layer 113 described in Embodiment 1. Specifically, the layer 111X(i,j) can be formed using a material having a hole-transport property that can be used for an electron-transport layer.

[0247] [Materials Having an Anthracene Skeleton] Organic compounds having an anthracene skeleton can be used as host materials. In particular, when a fluorescent material is used as the light-emitting material, organic compounds having an anthracene skeleton are suitable. This allows for the realization of light-emitting devices with good luminous efficiency and durability.

[0248] As the organic compound having an anthracene skeleton, for example, an organic compound having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferred because it is chemically stable. Furthermore, when the host material has a carbazole skeleton, it is preferred because it has improved hole injection and transport properties. In particular, when the host material contains a dibenzocarbazole skeleton, it is preferred because its HOMO level is shallower by about 0.1 eV than that of carbazole, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. From the viewpoint of hole injection and transport properties, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.

[0249] Therefore, a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton, a substance having both a 9,10-diphenylanthracene skeleton and a benzocarbazole skeleton, or a substance having both a 9,10-diphenylanthracene skeleton and a dibenzocarbazole skeleton is preferable as the host material.

[0250] For example, 6-[3-(9,10-diphenyl-2-anthryl)phenyl]-benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4′-yl}anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-phenyl-3-[4-(10-phenyl [4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), and the like can be used.

[0251] In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA exhibit very good properties.

[0252] [Substances Exhibiting Thermally Activated Delayed Fluorescence (TADF)] A TADF material can be used for the layer 111X(i, j). For example, the TADF materials exemplified below can be used as the host material. However, without being limited thereto, various known TADF materials can be used as the host material. When a TADF material is used as the host material, triplet excitation energy generated in the TADF material can be converted to singlet excitation energy by reverse intersystem crossing. Furthermore, the excitation energy can be transferred to the light-emitting material. In other words, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor. This can improve the luminous efficiency of the light-emitting device.

[0253] This is very effective when the luminescent material is a fluorescent luminescent material. Furthermore, in this case, in order to obtain high luminous efficiency, it is preferable that the S1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Furthermore, it is preferable that the T1 level of the TADF material is higher than the S1 level of the fluorescent luminescent material. Therefore, it is preferable that the T1 level of the TADF material is higher than the T1 level of the fluorescent luminescent material.

[0254] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, since this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0255] Furthermore, in order to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To this end, it is preferable that the fluorescent material has a protecting group around the luminophore (the skeleton responsible for luminescence) possessed by the fluorescent material. Examples of the protecting group include a substituent that does not have a π bond, and a saturated hydrocarbon is preferred. Specific examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable that there are multiple protecting groups. Substituents that do not have a π bond have poor carrier transport function, so the distance between the TADF material and the luminophore of the fluorescent material can be increased without significantly affecting carrier transport or carrier recombination.

[0256] Here, the term "luminophore" refers to an atomic group (skeleton) that causes light emission in a fluorescent substance. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring.

[0257] Examples of the fused aromatic ring or fused heteroaromatic ring include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, etc. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0258] For example, a TADF material that can be used as a light-emitting material can be used as a host material.

[0259] [Configuration Example 1 of Mixed Material] A material obtained by mixing a plurality of substances can be used as the host material. For example, a material having electron transport properties and a material having hole transport properties can be used as the mixed material. The weight ratio of the material having hole transport properties to the material having electron transport properties contained in the mixed material may be set to 1 / 19 or more and 1 / 19 or less. This allows the carrier transport properties of the layer 111X(i,j) to be easily adjusted. Furthermore, the recombination region can be easily controlled.

[0260] [Configuration Example 2 of Mixed Material] A material mixed with a phosphorescent material can be used as a host material. When a fluorescent material is used as an emitting material, the phosphorescent material can be used as an energy donor that provides excitation energy to the fluorescent material.

[0261] A mixed material containing a material that forms an exciplex can be used as the host material. For example, a material whose emission spectrum of the formed exciplex overlaps with the wavelength of the lowest energy absorption band of the light-emitting substance can be used as the host material. This allows for smooth energy transfer, improving luminous efficiency and reducing driving voltage.

[0262] At least one of the materials forming the exciplex can be a phosphorescent material, which allows for the utilization of reverse intersystem crossing or the efficient conversion of triplet excitation energy to singlet excitation energy.

[0263] As a combination of materials for forming an exciplex, for example, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. Alternatively, it is preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. This allows for efficient formation of an exciplex. Note that the LUMO level and HOMO level of the material can be derived from electrochemical properties (reduction potential and oxidation potential). Specifically, the reduction potential and oxidation potential can be measured using cyclic voltammetry (CV) measurement.

[0264] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of a material having hole transport properties, a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of exciplexes can be confirmed by comparing the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0265] <<Structure Example of Layer 112>> For example, a material having a hole-transporting property can be used for the layer 112. The layer 112 can be referred to as a hole-transporting layer. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111X(i,j) is used for the layer 112 is preferable. This can suppress energy transfer from excitons generated in the layer 111X(i,j) to the layer 112. Note that the structure that can be used for the layer 112 described in Embodiment 1 can be used for the layer 112.

[0266] <<Structural Example of Layer 113>> For example, a material having an electron-transporting property, a material having an anthracene skeleton, a mixed material, or the like can be used for the layer 113. The layer 113 can be referred to as an electron-transporting layer. Note that a structure in which a material having a larger band gap than that of the light-emitting material contained in the layer 111X(i,j) is used for the layer 113 is preferable. This can suppress energy transfer from excitons generated in the layer 111X(i,j) to the layer 113. Note that the structure that can be used for the layer 113 described in Embodiment 1 can be used for the layer 113.

[0267] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0268] Embodiment 5 In this embodiment, a structure of a device according to one embodiment of the present invention will be described with reference to FIGS.

[0269] 3A and 3B are diagrams illustrating a configuration of a device according to one embodiment of the present invention. Fig. 3A is a top view of the device according to one embodiment of the present invention, and Fig. 3B is a top view illustrating a portion of Fig. 3A. Fig. 3C is a cross-sectional view along the cutting lines X1-X2, X3-X4, X9-X10, and X11-X12 shown in Fig. 3A, and along a pair of pixels 703(i, j).

[0270] FIG. 4 is a block diagram illustrating the configuration of an apparatus according to one embodiment of the present invention.

[0271] FIG. 5 is a circuit diagram illustrating a configuration of a device according to one embodiment of the present invention.

[0272] FIG. 6 is a circuit diagram illustrating a configuration of a device according to one embodiment of the present invention.

[0273] 7A and 7B are circuit diagrams illustrating a configuration of a device according to one embodiment of the present invention, in which Fig. 7A is a circuit diagram illustrating an amplifier circuit AMP1(j) that can be used in the device according to one embodiment of the present invention, and Fig. 7B is a circuit diagram illustrating a sampling circuit SC(j) that can be used in the functional panel according to one embodiment of the present invention.

[0274] In this specification, variables that take on integer values ​​of 1 or greater may be used as symbols. For example, (p) including a variable p that takes on an integer value of 1 or greater may be used as part of a symbol specifying any one of up to p components. Also, for example, (m, n) including variables m and n that take on integer values ​​of 1 or greater may be used as part of a symbol specifying any one of up to m×n components.

[0275] <Configuration Example 1 of Device 700> A device 700 according to one embodiment of the present invention includes a region 231, a conductive film ANO, and a conductive film VCOM2 (see FIG. 3A). The region 231 includes a set of pixels 703(i, j).

[0276] <<Configuration Example 1 of a Set of Pixels 703(i,j)>> A set of pixels 703(i,j) includes a pixel 702X(i,j) (see FIGS. 3B and 3C).

[0277] The pixel 702X(i,j) includes a light-emitting device 550X(i,j) and a pixel circuit 530X(i,j). One electrode of the light-emitting device 550X(i,j) is electrically connected to the pixel circuit 530X(i,j), and the other electrode is electrically connected to the conductive film VCOM2.

[0278] For example, the light-emitting device described in the fourth embodiment can be used as the light-emitting device 550X(i, j).

[0279] The pixel circuit 530X(i,j) is electrically connected to the conductive film ANO (see FIG. 5). The device 700 has a function of displaying an image. The device 700 is a display device.

[0280] <<Configuration Example 2 of a Set of Pixels 703(i,j)>> A set of pixels 703(i,j) includes a pixel 702S(i,j) (see FIGS. 3B and 3C).

[0281] The pixel 702S(i,j) includes a photoelectric conversion device 550S(i,j) and a pixel circuit 530S(i,j). One electrode of the photoelectric conversion device 550S(i,j) is electrically connected to the pixel circuit 530S(i,j), and the other electrode is electrically connected to the conductive film VPD.

[0282] For example, the photoelectric conversion device described in any of Embodiments 1 to 3 can be used as the photoelectric conversion device 550S(i, j).

[0283] The pixel circuit 530S(i,j) is electrically connected to the conductive film WX(j), and has a function of supplying an imaging signal (see FIG. 6). The device 700 has a function of supplying an imaging signal. The device 700 is also an imaging device.

[0284] <Configuration Example 2 of Device 700> The device 700 according to one embodiment of the present invention includes a functional layer 540 and a functional layer 520 (see FIG. 3C). The functional layer 540 overlaps with the functional layer 520.

[0285] The functional layer 540 includes a light-emitting device 550X(i,j) and a photoelectric conversion device 550S(i,j).

[0286] The functional layer 520 includes a pixel circuit 530X(i,j), a conductive film ANO, and a conductive film VCOM2.

[0287] The functional layer 520 includes a pixel circuit 530S(i,j), a conductive film WX(i), and a conductive film VPD.

[0288] <Structure Example 3 of Device 700> A device 700 of one embodiment of the present invention includes a driver circuit GD, a conductive film G1(i), and a conductive film G2(i) (see FIGS. 4 and 5).

[0289] <<Configuration Example of the Drive Circuit GD>> The drive circuit GD supplies a first selection signal and a second selection signal.

[0290] The conductive film G1(i) is supplied with a first selection signal, and the conductive film G2(i) is supplied with a second selection signal.

[0291] <Structure Example 4 of Device 700> A device 700 of one embodiment of the present invention includes a driver circuit SD, a conductive film S1(j), and a conductive film S2(j) (see FIGS. 4 and 5). The device 700 also includes a conductive film V0.

[0292] <<Configuration Example of Driver Circuit SD>> The driver circuit SD supplies a first control signal and a second control signal.

[0293] The conductive film S1(j) is supplied with a first control signal, and the conductive film S2(j) is supplied with a second control signal.

[0294] <<Configuration Example 1 of Pixel Circuit 530X(i,j)>> The pixel circuit 530X(i,j) is electrically connected to a conductive film G1(i) and a conductive film S1(j). The conductive film G1(i) supplies a first selection signal, and the conductive film S1(j) supplies a first control signal.

[0295] The pixel circuit 530X(i,j) drives the light-emitting device 550X(i,j) based on the first selection signal and the first control signal. The light-emitting device 550X(i,j) emits light.

[0296] <<Configuration Example 2 of Pixel Circuit 530X(i,j)>> The pixel circuit 530X(i,j) includes a switch SW21, a switch SW22, a transistor M21, a capacitor C21, and a node N21.

[0297] The transistor M21 has a gate electrode electrically connected to the node N21, a first electrode electrically connected to the light-emitting device 550X(i, j), and a second electrode electrically connected to the conductive film ANO.

[0298] The switch SW21 has a first terminal electrically connected to the node N21, a second terminal electrically connected to the conductive film S1(j), and a gate electrode having the function of controlling the conductive state or non-conductive state based on the potential of the conductive film G1(i).

[0299] The switch SW22 includes a first terminal electrically connected to the conductive film S2(j) and a gate electrode having a function of controlling the conductive state or non-conductive state based on the potential of the conductive film G2(i).

[0300] The capacitor C21 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the second electrode of the switch SW22.

[0301] This allows an image signal to be stored in node N21. Alternatively, the potential of node N21 can be changed using switch SW22. Alternatively, the intensity of light emitted by light-emitting device 550X(i, j) can be controlled using the potential of node N21. As a result, a novel device with excellent convenience, usability, and reliability can be provided.

[0302] <<Configuration Example 3 of Pixel Circuit 530X(i,j)>> The pixel circuit 530X(i,j) includes a switch SW23, a node N22, and a capacitor C22.

[0303] The switch SW23 has a first terminal electrically connected to the conductive film V0, a ​​second terminal electrically connected to the node N22, and a gate electrode having the function of controlling the conductive state or non-conductive state based on the potential of the conductive film G2(i).

[0304] The capacitor C22 includes a conductive film electrically connected to the node N21 and a conductive film electrically connected to the node N22.

[0305] The first electrode of the transistor M21 is electrically connected to a node N22.

[0306] <Configuration Example 5 of Device 700> A device 700 of one embodiment of the present invention includes a driver circuit RD, a conductive film RS(i), a conductive film TX(i), and a conductive film SE(i) (see FIGS. 4 and 6).

[0307] <<Configuration Example of Driver Circuit RD>> The driver circuit RD supplies a third selection signal, a fourth selection signal, and a fifth selection signal.

[0308] The conductive film RS(i) is supplied with a third selection signal, the conductive film TX(i) is supplied with a fourth selection signal, and the conductive film SE(i) is supplied with a fifth selection signal.

[0309] <<Configuration Example 1 of Pixel Circuit 530S(i,j)>> The pixel circuit 530S(i,j) is electrically connected to the conductive film RS(i), the conductive film TX(i), and the conductive film SE(i). The conductive film RS(i) supplies a third selection signal, the conductive film TX(i) supplies a fourth selection signal, and the conductive film SE(i) supplies a fifth selection signal.

[0310] The pixel circuit 530S(i,j) is initialized based on the third selection signal, the pixel circuit 530S(i,j) captures an image based on the fourth selection signal, and the pixel circuit 530S(i,j) supplies an image capture signal based on the fifth selection signal. Note that an image can be captured while the light-emitting device 550X(i,j) is emitting light.

[0311] <<Configuration Example 2 of Pixel Circuit 530S(i,j)>> The pixel circuit 530S(i,j) includes a switch SW31, a switch SW32, a switch SW33, a transistor M31, a capacitor C31, and a node FD.

[0312] The switch SW31 has a first terminal electrically connected to the photoelectric conversion device 550S(i, j), a second terminal electrically connected to the node FD, and a gate electrode having the function of controlling the conductive state or non-conductive state based on the potential of the conductive film TX(i).

[0313] The switch SW32 has a first terminal electrically connected to the node FD, a second terminal electrically connected to the conductive film VR, and a gate electrode having a function of controlling the conductive state or non-conductive state based on the potential of the conductive film RS(i).

[0314] The capacitor C31 includes a conductive film electrically connected to the node FD and a conductive film electrically connected to the conductive film VCP.

[0315] The transistor M31 includes a gate electrode electrically connected to the node FD and a first electrode electrically connected to the conductive film VPI.

[0316] The switch SW33 has a first terminal electrically connected to the second electrode of the transistor M31, a second terminal electrically connected to the conductive film WX(j), and a gate electrode having the function of controlling the conductive state or non-conductive state based on the potential of the conductive film SE(i).

[0317] As a result, the imaging signal generated by the photoelectric conversion device 550S(i,j) can be transferred to the node FD using the switch SW31. Alternatively, the imaging signal generated by the photoelectric conversion device 550S(i,j) can be stored in the node FD using the switch SW31. Alternatively, the pixel circuit 530S(i,j) and the photoelectric conversion device 550S(i,j) can be brought into a non-conductive state using the switch SW31. Alternatively, a correlated double sampling method can be applied. Alternatively, noise contained in the imaging signal can be reduced. As a result, a novel device with excellent convenience, usability, and reliability can be provided.

[0318] <Structure Example 6 of Device 700> The device 700 of one embodiment of the present invention includes a read circuit RC, a conductive film CL, and a conductive film CAPSEL (see FIGS. 4, 7A, and 7B).

[0319] The device 700 also includes a conductive film VLEN and a conductive film VIV.

[0320] The device 700 also includes a conductive film VCL, a conductive film CDSVDD, a conductive film CDSVSS, and a conductive film CDSBIAS.

[0321] <Configuration Example of Readout Circuit RC> The readout circuit RC includes a readout circuit RC(j) (see FIG. 4).

[0322] The read circuit RC(j) includes an amplifier circuit AMP1(j) and a sampling circuit SC(j).

[0323] [Configuration Example 1 of Amplifier Circuit AMP1(j)] The amplifier circuit AMP1(j) is electrically connected to the conductive film WX(j), and has a function of amplifying an image pickup signal.

[0324] [Configuration Example 2 of Amplifier Circuit AMP1(j)] The amplifier circuit AMP1(j) includes a transistor M32(j), and the transistor M32(j) includes a gate electrode electrically connected to the conductive film VLEN, a first electrode electrically connected to the conductive film WX(j), and a second electrode electrically connected to the conductive film VIV.

[0325] When the switch SW33 is in a conductive state, the conductive film WX(j) connects the transistor M31 and the transistor M32(j) (see FIGS. 6 and 7A). This allows the transistor M31 and the transistor M32(j) to form a source follower circuit. Alternatively, the potential of the conductive film WX(j) can be changed based on the potential of the node FD.

[0326] [Configuration Example of Sampling Circuit SC(j)] The sampling circuit SC(j) includes a terminal IN1(j), a terminal IN2, a terminal IN3, and a terminal OUT(j) (see FIG. 7B).

[0327] The terminal IN1(j) is electrically connected to the conductive film WX(j), the terminal IN2 is electrically connected to the conductive film CL, and the terminal IN3 is electrically connected to the conductive film CAPSEL.

[0328] The sampling circuit SC(j) has a function of acquiring an imaging signal based on the potentials of the conductive films CL and CAPSEL. The terminal OUT(j) has a function of supplying a signal that changes based on the potential of the terminal IN1(j).

[0329] This makes it possible to acquire an imaging signal from the pixel circuit 530S(i,j). Alternatively, for example, a correlated double sampling method can be applied. Alternatively, a sampling circuit SC(j) can be provided for each conductive film WX(j). A differential signal of the pixel circuit 530S(i,j) can be acquired for each conductive film WX(j). Alternatively, the operating frequency of the sampling circuit SC(j) can be suppressed. Alternatively, noise can be reduced. As a result, a novel device with excellent convenience, usability, and reliability can be provided.

[0330] <Structure Example 7 of Device 700> The device 700 of one embodiment of the present invention includes a region 231 (see FIG. 4). The region 231 has a function of displaying an image.

[0331] Region 231 comprises a group of pixels 703(i,1) through 703(i,n) and another group of pixels 703(1,j) through 703(m,j).

[0332] A group of pixels 703(i,1) to 703(i,n) are arranged in the row direction (the direction indicated by arrow R1 in the figure), and the group of pixels 703(i,1) to 703(i,n) includes pixel 703(i,j).

[0333] The conductive film G1(i) is electrically connected to the group of pixels 703(i,1) to 703(i,n).

[0334] Another group of pixels 703(1,j) to 703(m,j) are arranged in a column direction (the direction indicated by arrow C1 in the figure) that intersects with the row direction, and the other group of pixels 703(1,j) to 703(m,j) includes pixel 703(i,j).

[0335] In addition, another group of pixels 703(1,j) to 703(m,j) are electrically connected to the conductive film S1g(j).

[0336] <Configuration Example 8 of Device 700> A device 700 of one embodiment of the present invention includes a multiplexer MUX, an amplifier circuit AMP2, and an analog-to-digital converter circuit ADC (see FIG. 4).

[0337] The multiplexer MUX has a function of selecting one of the plurality of sampling circuits SC(j), acquiring an image signal, and supplying it to, for example, an amplifier circuit AMP2.

[0338] This allows imaging information to be acquired by selecting a predetermined pixel from a plurality of pixels arranged in the row direction. Alternatively, the number of imaging signals acquired simultaneously can be limited to a predetermined number. Alternatively, an analog-to-digital conversion circuit ADC with a fewer number of input channels than the number of pixels arranged in the row direction can be used. As a result, a novel device with excellent convenience, usability, and reliability can be provided.

[0339] The amplifier circuit AMP2 can amplify the image signal and supply it to the analog-to-digital conversion circuit ADC.

[0340] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0341] Embodiment 6 In this embodiment, a structure of a device according to one embodiment of the present invention will be described with reference to FIGS.

[0342] FIG. 8A is a cross-sectional perspective view illustrating an imaging device, and FIG. 8B is a circuit diagram illustrating a pixel circuit.

[0343] 9 is a cross-sectional view illustrating a structure of a device according to one embodiment of the present invention, specifically, a cross-sectional view of a pixel.

[0344] 10A to 10F are perspective views of a package and a module that house an imaging device.

[0345] <Configuration Example 1 of Imaging Device> A device according to one embodiment of the present invention includes a functional layer 520, a functional layer 540, and a functional layer 770 (see FIG. 8 ). The functional layer 540 is sandwiched between the functional layer 520 and the functional layer 770 (see FIGS. 8 and 9 ).

[0346] The functional layer 540 includes a photoelectric conversion device 550S(i,j) (see FIG. 9).

[0347] The functional layer 520 includes a pixel circuit 530S(i, j). The device according to one embodiment of the present invention has an imaging function. The device according to one embodiment of the present invention can be called an imaging device.

[0348] The functional layer 770 also includes, for example, a microlens array MLA and a colored layer CF.

[0349] An imaging device according to one embodiment of the present invention includes a pixel and a conductive film VPD (see FIG. 9 ). The pixel includes a photoelectric conversion device 550S(i,j) and a pixel circuit 530S(i,j). The photoelectric conversion device 550S(i,j) includes an electrode 551S(i,j) and an electrode 552S(i,j). The electrode 551S(i,j) is electrically connected to the pixel circuit 530S(i,j), and the electrode 552S(i,j) is electrically connected to the conductive film VPD (see FIGS. 8B and 9 ).

[0350] <<Photoelectric Conversion Device 550S(i,j)>> The photoelectric conversion device 550S(i,j) has a unit 103S(i,j) (see FIG. 9). The unit 103S(i,j) is sandwiched between an electrode 552S(i,j) and an electrode 551S(i,j).

[0351] Unit 103S(i,j) includes layer 114S(i,j), layer 112, and layer 113. Layer 114S(i,j) is sandwiched between layer 113 and layer 112, layer 113 is sandwiched between electrode 552S(i,j) and layer 114S(i,j), and layer 112 is sandwiched between layer 114S(i,j) and electrode 551S(i,j).

[0352] For example, the photoelectric conversion device described in any one of Embodiments 1 to 3 can be used as the photoelectric conversion device 550S(i, j).

[0353] Pixel circuit 530S(i,j) includes switches SW31, SW32, and SW33, and a transistor M31 (see FIGS. 8B and 9). For example, a transistor formed on a silicon substrate can be used as the transistor M31.

[0354] <Configuration Example 2 of Imaging Device> An example of a package containing an image sensor chip and a camera module will be described.

[0355] 10A is a perspective view of the top surface of a package containing an image sensor chip. The package includes a package substrate 610 for fixing an image sensor chip 650, a cover glass 620, and an adhesive 630 for bonding the two together.

[0356] 10B is a perspective view of the underside of the package. The underside of the package has a BGA (Ball Grid Array) with solder balls as bumps 640. Note that the package is not limited to a BGA, and may have an LGA (Land Grid Array), PGA (Pin Grid Array), or the like.

[0357] 10C is a perspective view of the package, with the cover glass 620 and the adhesive 630 partially removed. Electrode pads 660 are formed on the package substrate 610, and the electrode pads 660 and the bumps 640 are electrically connected via through holes. The electrode pads 660 are electrically connected to the image sensor chip 650 by wires 670.

[0358] 10D is a perspective view of the top surface of a camera module in which an image sensor chip is housed in a lens-integrated package. The camera module includes a package substrate 611 for fixing an image sensor chip 651, a lens cover 621, and a lens 635. An IC chip 690 having functions such as a drive circuit and a signal conversion circuit for the imaging device is also provided between the package substrate 611 and the image sensor chip 651, forming a system in package (SiP).

[0359] 10E is an external perspective view of the underside of the camera module. The camera module has a QFN (quad flat no-lead package) configuration with mounting lands 641 provided on the underside and side surfaces of a package substrate 611. Note that this configuration is just one example, and a QFP (quad flat package) or the aforementioned BGA may also be provided.

[0360] 10F is a perspective view of the module, omitting a portion of the lens cover 621 and the lens 635. The lands 641 are electrically connected to electrode pads 661, and the electrode pads 661 are electrically connected to the image sensor chip 651 or the IC chip 690 by wires 671.

[0361] By housing the image sensor chip in a package of the above-described type, it becomes easy to mount the image sensor chip on a printed circuit board or the like, and the image sensor chip can be incorporated into various semiconductor devices and electronic devices.

[0362] This embodiment mode can be combined as appropriate with the descriptions of other embodiment modes or examples.

[0363] (Embodiment 7) Examples of electronic devices that can use the imaging device according to one embodiment of the present invention include display devices, personal computers, image storage devices or image playback devices equipped with a recording medium, mobile phones, game consoles including portable devices, portable data terminals, e-book terminals, video cameras, cameras such as digital still cameras, goggle-type displays (head-mounted displays), navigation systems, audio playback devices (car audio, digital audio player, etc.), copiers, facsimiles, printers, printer-combined machines, automated teller machines (ATMs), vending machines, etc. Specific examples of these electronic devices are shown in FIGS.

[0364] 11A illustrates an example of a mobile phone, which includes a housing 981, a display portion 982, operation buttons 983, an external connection port 984, a speaker 985, a microphone 986, a camera 987, and the like. The mobile phone includes a touch sensor in the display portion 982. Any operation, such as making a call or inputting text, can be performed by touching the display portion 982 with a finger or a stylus. The imaging device and its operating method according to one embodiment of the present invention can be applied to an element for acquiring an image in the mobile phone.

[0365] 11B shows a portable data terminal including a housing 911, a display portion 912, a speaker 913, a camera 919, and the like. Information can be input and output using a touch panel function of the display portion 912. Characters and the like can be recognized from an image acquired by the camera 919 and output as voice through the speaker 913. The imaging device and an operation method thereof according to one embodiment of the present invention can be applied to an element for acquiring an image in the portable data terminal.

[0366] 11C shows a surveillance camera, which includes a support base 951, a camera unit 952, a protective cover 953, and the like. The camera unit 952 is provided with a rotation mechanism and is installed on the ceiling, enabling imaging of the entire periphery. The imaging device and its operation method according to one embodiment of the present invention can be applied to elements for acquiring images in the camera unit. Note that the term "surveillance camera" is a common name and is not intended to limit the application. For example, a device having a function as a surveillance camera is also called a camera or a video camera.

[0367] 11D shows a video camera including a first housing 971, a second housing 972, a display unit 973, operation keys 974, a lens 975, a connection unit 976, a speaker 977, a microphone 978, and the like. The operation keys 974 and the lens 975 are provided in the first housing 971, and the display unit 973 is provided in the second housing 972. The imaging device and its operation method according to one embodiment of the present invention can be applied to elements for acquiring an image in the video camera.

[0368] 11E illustrates a digital camera including a housing 961, a shutter button 962, a microphone 963, a light-emitting portion 967, a lens 965, and the like. The imaging device and the operation method thereof according to one embodiment of the present invention can be applied to elements for acquiring an image in the digital camera.

[0369] 11F shows a wristwatch-type information terminal including a display portion 932, a housing / wristband 933, a camera 939, and the like. The display portion 932 includes a touch panel for operating the information terminal. The display portion 932 and the housing / wristband 933 are flexible and therefore easily worn on the body. The imaging device and its operating method according to one embodiment of the present invention can be applied to an element for acquiring an image in the information terminal.

[0370] This embodiment mode can be combined as appropriate with the descriptions of other embodiment modes or examples.

[0371] In this example, a photoelectric conversion device 1 according to one embodiment of the present invention will be described with reference to FIGS.

[0372] FIG. 12A is a diagram illustrating the configuration of a photoelectric conversion device 550S, and FIG. 12B is a diagram illustrating the configuration of a photoelectric conversion device 550S different from that of FIG. 12A.

[0373] FIG. 13 is a diagram illustrating the spectral sensitivity characteristics of the photoelectric conversion devices 1 to 3. In FIG.

[0374] FIG. 14 is a diagram illustrating the voltage-current density characteristics of the photoelectric conversion devices 1 to 3 when irradiated with light.

[0375] FIG. 15 is a diagram illustrating the light voltage-current density characteristics of the photoelectric conversion devices 1 to 3 in a non-irradiated state.

[0376] FIG. 16 is a diagram illustrating the spectral sensitivity characteristics of the photoelectric conversion device 4 and the photoelectric conversion device 5. In FIG.

[0377] FIG. 17 is a diagram illustrating the voltage-current density characteristics of the photoelectric conversion device 4 and the photoelectric conversion device 5 when irradiated with light.

[0378] FIG. 18 is a diagram illustrating the light voltage-current density characteristics of the photoelectric conversion device 4 and the photoelectric conversion device 5 in a non-irradiated state.

[0379] <Photoelectric Conversion Device 1> The photoelectric conversion device 1 fabricated and described in this example has the same configuration as the photoelectric conversion device 550S (see FIG. 12A).

[0380] The photoelectric conversion device 1 has an electrode 551S, an electrode 552S, and a unit 103S. The unit 103S is sandwiched between the electrode 551S and the electrode 552S.

[0381] The unit 103S includes a layer 113 and a layer 114S. The layer 113 is sandwiched between the electrode 552S and the layer 114S, and includes an organic compound ETM. The layer 113 includes a layer 113(1) and a layer 113(2). The layer 113(1) is sandwiched between the layer 113(2) and the layer 114S.

[0382] The organic compound ETM has an electron transport property, and the organic compound ETM has a LUMO level at the first level LUMO1.

[0383] The layer 114S includes a second organic compound CTM, which emits delayed fluorescence at room temperature.

[0384] The organic compound CTM has a LUMO level at a second level LUMO2. The second level LUMO2 has a difference of 1.0 eV or less between it and the first level LUMO1. When the layer 113 has a stacked structure, the organic compound ETM contained in a layer in contact with the layer 114S is used for comparing the LUMO levels. Specifically, the organic compound ETM contained in the layer 113(1) is used for comparing the LUMO levels with the organic compound CTM.

[0385] Specifically, the layer 113(1) contains 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), which has a LUMO level of -2.94 eV. The layer 114S contains 7,10-bis(4-(diphenylamino)phenyl)-2,3-dicyanopyrazino-phenanthrene (abbreviation: TPA-DCPP), which has a LUMO level of -3.70 eV. The difference between the LUMO levels of TPA-DCPP and 2mDBTBPDBq-II is 0.76 eV. The above LUMO level values ​​were all derived from cyclic voltammetry (CV) measurements.

[0386] <Configuration of Photoelectric Conversion Device 1> The configuration of the photoelectric conversion device 1 is shown in Table 1. The structural formulas of the materials used in the photoelectric conversion device described in this example are shown below.

[0387]

[0388]

[0389] <<Method for Producing Photoelectric Conversion Device 1>> The photoelectric conversion device 1 described in this example was produced using a method including the following steps.

[0390] [First Step] In the first step, the reflective film REF was formed by sputtering using an alloy containing silver (Ag), palladium (Pd), and copper (Cu) (abbreviated as APC) as a target.

[0391] The reflective film REF includes APC and has a thickness of 100 nm.

[0392] [Second Step] In the second step, the electrode 551S was formed on the reflective film REF. Specifically, the electrode 551S was formed by a sputtering method using an indium oxide-tin oxide (abbreviated as ITSO) target containing silicon or silicon oxide.

[0393] The electrode 551S includes ITSO, has a thickness of 100 nm, and is 4 mm ２ It has an area of ​​(2 mm x 2 mm).

[0394] Next, the substrate on which the electrode 551S was formed was washed with water, baked at 200° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds. −４ The substrate was introduced into a vacuum deposition apparatus whose internal pressure had been reduced to about Pa, and vacuum baking was performed at 170° C. for 30 minutes in a heating chamber of the vacuum deposition apparatus. Thereafter, the substrate was allowed to cool for about 30 minutes.

[0395] [Third Step] In the third step, the layer 104 was formed on the electrode 551S. Specifically, materials were co-evaporated using a resistance heating method.

[0396] The layer 104 contains N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf) and an electron acceptor material (abbreviation: OCHD-003) in a weight ratio of BBABnf:OCHD-003 = 1:0.1, and has a thickness of 11 nm. The electron acceptor material OCHD-003 contains fluorine and has a molecular weight of 672.

[0397] [Fourth Step] In the fourth step, a layer 112 was formed on the layer 104. Specifically, a material was evaporated by using a resistance heating method.

[0398] The layer 112 contains BBABnf and has a thickness of 40 nm.

[0399] [Fifth Step] In the fifth step, a layer 114S was formed on the layer 112. Specifically, materials were co-evaporated using a resistance heating method.

[0400] The layer 114S contains 7,10-bis(4-(diphenylamino)phenyl)-2,3-dicyanopyrazino-phenanthrene (abbreviation: TPA-DCPP) and has a thickness of 30 nm.

[0401] [Sixth Step] In the sixth step, a layer 113(1) was formed on the layer 114S. Specifically, a material was evaporated using a resistance heating method.

[0402] The layer 113(1) contains 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II) and has a thickness of 10 nm.

[0403] [Seventh Step] In the seventh step, a layer 113(2) was formed on the layer 113(1). Specifically, materials were evaporated using a resistance heating method.

[0404] The layer 113(2) contains 2,9-di(2-naphthyl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen) and has a thickness of 10 nm.

[0405] [Eighth Step] In the eighth step, the layer 105 was formed on the layer 113(2). Specifically, the material was evaporated using a resistance heating method.

[0406] The layer 105 contains LiF and has a thickness of 1 nm.

[0407] [Ninth Step] In the ninth step, an electrode 552S was formed on the layer 105. Specifically, materials were co-evaporated using a resistance heating method.

[0408] The electrode 552S contains Ag and Mg at a weight ratio of Ag:Mg=1:01 and has a thickness of 10 nm.

[0409] [Tenth Step] In the tenth step, a layer CAP was formed on the electrode 552S. Specifically, a material was evaporated by using a resistance heating method.

[0410] The layer CAP contains 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) and has a thickness of 80 nm.

[0411] <<Operating Characteristics of Photoelectric Conversion Device 1>> The operating characteristics of the photoelectric conversion device 1 were measured at room temperature.

[0412] Monochromatic light was irradiated while a potential of −6 V was supplied to electrode 551S relative to the potential of electrode 552S. The current versus the amount of irradiated light was measured, and the external quantum efficiency (EQE) was calculated from the conversion efficiency (see FIG. 13 ). The wavelengths of the monochromatic light were selected in 25 nm increments from the range of 375 nm to 750 nm.

[0413] 12.5 μW / cm ２ The current density flowing through the device was measured while the potential of the electrode 551S was swept from −6 V to +4 V with the potential of the electrode 552S as the reference (see FIG. 14).

[0414] Furthermore, in the absence of light, the current density of the dark current flowing through the device was measured while sweeping the potential of the electrode 551S from −6 V to +4 V with the potential of the electrode 552S as the reference (see FIG. 15).

[0415] The characteristics of the photoelectric conversion device 1 and other devices described later are shown in Table 2. Specifically, ２ The current density and EQE when irradiated with monochromatic light having a wavelength of 500 nm at an intensity of 1000 nm are shown.

[0416]

[0417] Photoelectric conversion device 1 was found to exhibit excellent characteristics. For example, photoelectric conversion was possible using layer 114S containing only TPA-DCPP. It also had an excellent EQE for green light. This allows for use in a wide range of applications, such as biosensing. Photoelectric conversion device 2 was found to exhibit excellent characteristics similar to photoelectric conversion device 1. It also reduced dark current, making it suitable for use in optical sensing applications. Photoelectric conversion device 3 had a greater EQE for green display light used in displays. It also increased current at a low driving voltage, thereby reducing power consumption. Photoelectric conversion device 4 also exhibited excellent characteristics. By using anti-DMADT, deposition was possible at a lower temperature than C60. It also increased current at a low driving voltage, thereby reducing power consumption. Photoelectric conversion device 5 was found to exhibit excellent characteristics. By using a stacked structure of anti-DMADT, it was possible to increase sensitivity to green light compared to device 4, which had a mixed structure. This provides a good EQE for green light, making it suitable for a wide range of applications, including biosensing.

[0418] <Photoelectric Conversion Device 2> The photoelectric conversion device 2 fabricated in this example has a configuration similar to that of the photoelectric conversion device 550S (see FIG. 12A). The configuration of the photoelectric conversion device 2 differs from that of the photoelectric conversion device 1 in the layer 114S. Specifically, the layer 114S differs from that of the photoelectric conversion device 1 in that it contains TPA-DCPP and (C60-Ih)[5,6] fullerene (abbreviation: C60).

[0419] <<Method of Fabricating Device 2>> Device 2 described in this example was fabricated using a method having the following steps.

[0420] The method for fabricating photoelectric conversion device 2 differs from the method for fabricating photoelectric conversion device 1 in that TPA-DCPP and C60 were co-deposited in place of TPA-DCPP in the fifth step. Here, the differences will be described in detail, and the above description will be used for the parts where a similar method was used.

[0421] [Fifth Step] In the fifth step, a layer 114S was formed on the layer 112. Specifically, materials were co-evaporated using a resistance heating method.

[0422] The layer 114S contains TPA-DCPP and C60 in a weight ratio of TPA-DCPP:C60=0.7:0.3, and has a thickness of 30 nm.

[0423] <<Operating Characteristics of Photoelectric Conversion Device 2>> The operating characteristics of the photoelectric conversion device 2 were measured at room temperature. The characteristics of the photoelectric conversion device 2 are shown in Table 2.

[0424] <Photoelectric Conversion Device 3> The photoelectric conversion device 3 fabricated in this example has a configuration similar to that of the photoelectric conversion device 550S (see FIG. 12A ). The configuration of the photoelectric conversion device 3 differs from that of the photoelectric conversion device 1 in the layer 114S. Specifically, the layer 114S differs from that of the photoelectric conversion device 1 in that it contains TPA-DCPP and 2,8-dimethylanthra[2,3-b:6,7-b′]dithiophene (abbreviation: anti-DMADT).

[0425] <<Method of Fabricating Device 3>> Device 3 described in this example was fabricated using a method having the following steps.

[0426] The method for fabricating the photoelectric conversion device 3 differs from the method for fabricating the photoelectric conversion device 1 in that TPA-DCPP and anti-DMADT are co-deposited in place of TPA-DCPP in the fifth step. Here, the differences will be described in detail, and the above description will be used for the parts where a similar method is used.

[0427] [Fifth Step] In the fifth step, a layer 114S was formed on the layer 112. Specifically, materials were co-evaporated using a resistance heating method.

[0428] The layer 114S contains TPA-DCPP and anti-DMADT in a weight ratio of TPA-DCPP:anti-DMADT=0.7:0.3, and has a thickness of 30 nm.

[0429] <<Operating Characteristics of Photoelectric Conversion Device 3>> The operating characteristics of the photoelectric conversion device 3 were measured at room temperature. The characteristics of the photoelectric conversion device 3 are shown in Table 2.

[0430] <Photoelectric conversion device 4> The photoelectric conversion device 4 fabricated in this example has a configuration similar to that of the photoelectric conversion device 550S (see FIG. 12B). The configuration of the photoelectric conversion device 4 differs from that of the photoelectric conversion device 1 in the layer 114S. Specifically, it differs from the photoelectric conversion device 1 in that it has a stacked structure in which layers 114P and 114N are stacked, instead of the single-layer structure.

[0431] <Configuration of Photoelectric Conversion Device 4> Table 3 shows the configuration of the photoelectric conversion device 4.

[0432]

[0433] <<Method of Fabricating Device 4>> Device 4 described in this example was fabricated using a method having the following steps.

[0434] The method for fabricating photoelectric conversion device 4 differs from the method for fabricating photoelectric conversion device 1 in that a layer 114P is formed in the fifth step, and that a step 5-2 is provided between the fifth step and the sixth step, in which a layer 114N is formed in the step 5-2. Here, the differences will be described in detail, and the above description will be used for the parts in which similar methods are used.

[0435] [Fifth Step] In the fifth step, a layer 114P was formed on the layer 112. Specifically, a material was evaporated by using a resistance heating method.

[0436] The layer 114P includes TPA-DCPP and has a thickness of 30 nm.

[0437] [Step 5-2] In step 5-2, a layer 114N was formed on the layer 114P. Specifically, a material was evaporated by using a resistance heating method.

[0438] The layer 114N contains C60 and has a thickness of 20 nm.

[0439] [Sixth Step] In the sixth step, a layer 113(1) was formed on the layer 114N. Specifically, a material was evaporated using a resistance heating method.

[0440] The layer 113(1) contains 2mDBTBPDBq-II and has a thickness of 10 nm.

[0441] <<Operating Characteristics of Photoelectric Conversion Device 4>> The operating characteristics of the photoelectric conversion device 4 were measured at room temperature. The characteristics of the photoelectric conversion device 4 are shown in Table 2.

[0442] <Photoelectric conversion device 5> The photoelectric conversion device 5 fabricated in this example has a configuration similar to that of the photoelectric conversion device 550S (see FIG. 12B). The configuration of the photoelectric conversion device 5 differs from that of the photoelectric conversion device 4 in the layer 114N. Specifically, the layer 114N differs from the photoelectric conversion device 4 in that it contains anti-DMADT instead of C60.

[0443] <<Method of Fabricating Device 5>> Device 5 described in this example was fabricated using a method having the following steps.

[0444] The method for fabricating photoelectric conversion device 5 differs from the method for fabricating photoelectric conversion device 4 in that anti-DMADT was used instead of C60 in step 5-2. Here, the differences will be described in detail, and the above description will be used for the parts where a similar method was used.

[0445] [Step 5-2] In step 5-2, a layer 114N was formed on the layer 114P. Specifically, materials were co-evaporated using a resistance heating method.

[0446] The layer 114N contains anti-DMADT and has a thickness of 3 nm.

[0447] <<Operating Characteristics of Photoelectric Conversion Device 5>> The operating characteristics of the photoelectric conversion device 5 were measured at room temperature. The characteristics of the photoelectric conversion device 5 are shown in Table 2.

[0448] ANO: conductive film, AMP1: amplifier circuit, AMP2: amplifier circuit, CF: colored layer, C21: capacitance, C22: capacitance, C31: capacitance, CAPSEL: conductive film, CDSVDD: conductive film, CDSVSS: conductive film, CDSBIAS: conductive film, CL: conductive film, FD: node, G1: conductive film, G2: conductive film, IN1: terminal, IN2: terminal, IN3: terminal, M21: transistor, M31: transistor, M32: transistor, N21: node, N22: node, OUT: terminal, RS: conductive film, S1: conductive film, S1g: conductive film, S2: conductive film, SE: conductive film, SW21: switch switch, SW22: switch, SW23: switch, SW31: switch, SW32: switch, SW33: switch, TX: conductive film, V0: conductive film, VCOM2: conductive film, VCL: conductive film, VCP: conductive film, VIV: conductive film, VLEN: conductive film, VPD: conductive film, VPI: conductive film, VR: conductive film, WX: conductive film, 103S: unit, 103X: unit, 104: layer, 105: layer, 111X: layer, 112: layer, 113: layer, 114N: layer, 114P: layer, 114S: layer, 231: region, 520: functional layer, 521: insulating film, 528: insulating film, 530S: Pixel circuit, 530X: pixel circuit, 540: functional layer, 550S: photoelectric conversion device, 550X: light-emitting device, 551S: electrode, 551X: electrode, 551XS: gap, 552S: electrode, 552X: electrode, 610: package substrate, 611: package substrate, 620: cover glass, 621: lens cover, 630: adhesive, 635: lens, 640: bump, 641: land, 650: image sensor chip, 651: image sensor chip, 660: electrode pad, 661: electrode pad, 670: wire, 671: wire, 690: IC chip, 700: Device, 702S: pixel, 702X: pixel, 703: pixel, 770: functional layer, 911: housing, 912: display unit, 913: speaker, 919: camera, 932: display unit, 933: housing / wristband, 939: camera, 951: support base, 952: camera unit, 953: protective cover, 961: housing, 962: shutter button, 963: microphone, 965: lens, 967: light emitting unit, 971: housing, 972: housing, 973: display unit, 974: operation keys, 975: lens, 976: connection unit, 977: speaker, 978: microphone, 981: housing, 982: display unit,983: Operation button, 984: External connection port, 985: Speaker, 986: Microphone, 987: Camera,

Claims

1. a first electrode, a second electrode, and a first unit; the first unit is located between the first electrode and the second electrode; the first unit has a first layer and a second layer; the first layer is located between the second electrode and the second layer; the first layer comprises a first organic compound; the first organic compound has an electron transport property, the second layer comprises a second organic compound; the second organic compound emits delayed fluorescence at room temperature; a difference between a LUMO level of the second organic compound and a LUMO level of the first organic compound being 1.0 eV or less;

2. In claim 1, the second layer comprises a third organic compound; The third organic compound has an electron accepting property with respect to the second organic compound.

3. In claim 2, the second layer has a third layer and a fourth layer; the third layer is located between the first layer and the fourth layer; the third layer is in contact with the fourth layer; the third layer includes the third organic compound; The fourth layer comprises the second organic compound.

4. In any one of claims 1 to 3, The photoelectric conversion device, wherein the second organic compound has a structure represented by the following general formula (G0): 【Chemical 1】 (However, in the above general formula (G0), A １ represents an amine skeleton or a carbazolyl group, the amine skeleton has an aryl group or a heteroaryl group, The amine skeleton may have a plurality of aryl groups only, a plurality of heteroaryl groups only, or an aryl group and a heteroaryl group, and in this case, the aryl groups, the heteroaryl groups, or the aryl groups and the heteroaryl groups may be bonded to each other to form a fused ring, the aryl group is substituted or unsubstituted; the heteroaryl group is substituted or unsubstituted; the carbazolyl group is substituted or unsubstituted; Ar represents a substituted or unsubstituted arylene group having 6 to 25 carbon atoms or a substituted or unsubstituted heteroarylene group having 2 to 25 carbon atoms; Ar may be composed of a plurality of aromatic rings, and in this case, the plurality of aromatic rings may be bonded to each other to form a condensed ring; A ２ represents an arylene group having 6 to 25 carbon atoms; The arylene group has at least one substituent, the substituent is a cyano group, a substituted or unsubstituted acyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted haloalkyl group, a substituted or unsubstituted cycloalkoxy group, or a substituted or unsubstituted cycloalkyl group; the alkoxy group has 1 to 6 carbon atoms; the haloalkyl group has 1 to 6 carbon atoms; the cycloalkoxy group has 3 to 8 carbon atoms; i is an integer between 1 and 5, j is an integer between 0 and 2, k is an integer between 1 and 6.

5. In any one of claims 1 to 3, The photoelectric conversion device, wherein the second organic compound has a structure represented by the following general formula (G0): 【Chemistry 2】 (However, in the above general formula (G0), A １ represents an amine skeleton or a carbazolyl group, the amine skeleton has an aryl group or a heteroaryl group, The amine skeleton may have a plurality of aryl groups only, a plurality of heteroaryl groups only, or an aryl group and a heteroaryl group, and in this case, the aryl groups, the heteroaryl groups, or the aryl groups and the heteroaryl groups may be bonded to each other to form a fused ring, the aryl group is substituted or unsubstituted; the heteroaryl group is substituted or unsubstituted; the carbazolyl group is substituted or unsubstituted; Ar represents a substituted or unsubstituted arylene group having 6 to 25 carbon atoms or a substituted or unsubstituted heteroarylene group having 2 to 25 carbon atoms; Ar may be composed of a plurality of aromatic rings, and in this case, the plurality of aromatic rings may be bonded to each other to form a condensed ring; A ２ represents a substituted or unsubstituted heteroaryl group having 2 to 25 carbon atoms or a substituted or unsubstituted heteroarylene group having 2 to 25 carbon atoms, i is an integer between 1 and 5, j is an integer between 0 and 2, k is an integer between 1 and 6.

6. having a set of pixels, the set of pixels includes a first pixel and a second pixel; the first pixel having a light-emitting device; The second pixel comprises the photoelectric conversion device according to claim 1 , The display device, wherein the light emitting device is adjacent to the photoelectric conversion device.

7. In claim 6, A first functional layer and a second functional layer are included, the first functional layer overlaps the second functional layer; the first pixel has a first pixel circuit; the first pixel circuit is electrically connected to the light emitting device; the second pixel has a second pixel circuit; the second pixel circuit is electrically connected to the photoelectric conversion device; the first functional layer includes the photoelectric conversion device and the light-emitting device; The second functional layer includes the first pixel circuit and the second pixel circuit.

8. In claim 6, the light-emitting device has a third electrode, a fourth electrode, and a second unit; the second unit is located between the third electrode and the fourth electrode; the second unit has a fifth layer, a sixth layer, and the first layer; the fifth layer is located between the sixth layer and the first layer; the fifth layer comprises a light-emitting material; the sixth layer is located between the fifth layer and the third electrode; the sixth layer includes a hole transporting material; The display device, wherein the first layer is located between the fourth electrode and the fifth layer.

Images