High-dielectric atomic membrane
Patent Information
- Application Number
- JP2023552932
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Priority Date
- 2022-10-06
- Filing Date
- 2022-10-06
- Publication Date
- 2025-09-19
AI Technical Summary
Conventional high dielectric atomic films, such as barium titanate, face challenges in achieving high dielectric constants and stability when reduced in size or thickness, leading to reduced dielectric properties and instability, particularly due to the mobility of ions under high electric fields.
Development of perovskite oxide nanosheets with a composition of (A2Bi)(Ti2M2)O13, (ABi2)(Ti3M)O13, (ABi)(TiM2)O10, and Bi2(Ti2M)O10, where A is a divalent metal ion and M is a pentavalent metal ion, with a thickness of 10 nm or less, utilizing Ti4+ and Bi3+ ions to enhance dielectric constants and stability.
The nanosheets achieve a high dielectric constant of over 1,000 with excellent insulation properties, enabling the creation of ultra-thin, high-performance dielectric films suitable for next-generation ceramic electronic components, multilayer capacitors, and memories, while avoiding issues like ion instability and size effects.