Solar cell module

Abstract

A solar cell module (1) comprises: a plurality of cell regions (2) each including a photovoltaic element; and a connecting part. The plurality of cell regions (2) are positioned in a state of being arranged planarly along a first direction. The photovoltaic elements generate electricity on the basis of incident light. The connecting part is positioned in a state of being electrically connected in series with the photovoltaic elements of the plurality of cell regions (2). The photovoltaic elements each include a first electrode layer, a second electrode layer, and a semiconductor layer (4b) disposed between the first and second electrode layers. At least one of the plurality of cell regions (2) includes an object part (5). The object part (5) is positioned in a state adjacent to the semiconductor layer (4b) in a plan view. The object part (5) has an insulator or semiconductor with a different band gap energy from that of the semiconductor layer (4b).

Description

solar cell module CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority from Japanese Application No. 2022-085267 (filed May 25, 2022), the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to solar cell modules.

[0003] Solar cells are classified into crystalline solar cells and thin-film solar cells. Thin-film solar cells generally have a structure in which multiple solar cell elements are arranged on a substrate and electrically connected in series (see, for example, the description in Patent Document 1).

[0004] Japanese Patent Application Laid-Open No. 2007-012976

[0005] A solar cell module is disclosed.

[0006] In one embodiment, the solar cell module includes a plurality of cell regions each including a solar cell element, and a connection portion. The plurality of cell regions are arranged in a plane along a first direction. The solar cell elements generate electricity based on incident light. The connection portion is arranged to electrically connect the solar cell elements of the plurality of cell regions in series. The solar cell elements include a first electrode layer, a second electrode layer, and a semiconductor layer located between the first electrode layer and the second electrode layer. At least one of the plurality of cell regions includes an object portion. The object portion is located adjacent to the semiconductor layer in a planar view. The object portion has a semiconductor or an insulator having a band gap energy different from that of the semiconductor layer.

[0007] In another embodiment, a solar cell module includes a plurality of cell regions each including a solar cell element, a connection portion, and a member. The plurality of cell regions are arranged in a plane along a first direction. The solar cell elements generate electricity based on incident light. The connection portion is arranged to electrically connect the solar cell elements of the plurality of cell regions in series. The member is arranged to overlap a first region of at least one of the plurality of cell regions in a planar view, but not overlap a second region of the at least one of the plurality of cell regions. The member absorbs light within at least a portion of the wavelength range of the incident light.

[0008] In another embodiment, a solar cell module includes a plurality of cell regions each including a solar cell element, a connection portion, and a member. The plurality of cell regions are arranged in a plane along a first direction. The solar cell elements generate electricity based on incident light. The connection portion is arranged to electrically connect the solar cell elements of the plurality of cell regions in series. In a planar view, the member is arranged so as to overlap a first region of at least one of the plurality of cell regions other than the cell regions located at both ends in the first direction, but not to overlap a second region of the at least one of the plurality of cell regions. The member reflects light within at least a portion of the wavelength range of the incident light.

[0009] FIG. 1 is a plan view schematically illustrating an example of the configuration of a solar cell module according to a first embodiment. FIG. 2 is a cross-sectional view schematically illustrating an example of a cross-section of a solar cell module taken along line II-II in FIG. 1. FIG. 3 is a cross-sectional view schematically illustrating an example of a cross-section of a solar cell module taken along line III-III in FIG. 1. FIG. 4 is a cross-sectional view schematically illustrating an example of a state during the manufacturing of a solar cell module. FIG. 5 is a cross-sectional view schematically illustrating an example of a state during the manufacturing of a solar cell module. FIG. 6 is a cross-sectional view schematically illustrating an example of a state during the manufacturing of a solar cell module. FIG. 7 is a cross-sectional view schematically illustrating an example of a state during the manufacturing of a solar cell module. FIG. 8 is a cross-sectional view schematically illustrating an example of a state during the manufacturing of a solar cell module. FIG. 9 is a cross-sectional view schematically illustrating an example of a state during the manufacturing of a solar cell module. FIG. 10 is a cross-sectional view schematically illustrating an example of a cross-section of a solar cell module according to a second embodiment. FIG. 11 is a cross-sectional view schematically illustrating an example of a cross-section of a solar cell module taken along line XI-XI in FIG. 10. FIG. 12 is a graph illustrating an example of the wavelength dependence of the absorbance of a light absorbing layer. FIG. 13 is a cross-sectional view schematically illustrating an example of a cross-section of a solar cell module according to a third embodiment. FIG. 14 is a cross-sectional view schematically showing a first example of a cross-section of a solar cell module taken along line XIV-XIV in FIG. 13 . FIG. 15 is a cross-sectional view schematically showing a second example of a cross-section of a solar cell module taken along line XIV-XIV in FIG. 13 . FIG. 16 is a cross-sectional view schematically showing a third example of a cross-section of a solar cell module taken along line XIV-XIV in FIG. 13 . FIG. 17 is a cross-sectional view schematically showing an example of a cross-section of a solar cell module according to a fourth embodiment. FIG. 18 is a cross-sectional view schematically showing an example of a cross-section of a solar cell module taken along line XVIII-XVIII in FIG. 17 . FIG. 19 is a cross-sectional view schematically showing an example of a cross-section of a solar cell module taken along line XIX-XIX in FIG. 17 . FIG. 20 is a cross-sectional view schematically showing a cross-section of a first modified solar cell module taken along line XIX-XIX in FIG. 17 . FIG. 21 is a cross-sectional view schematically showing a cross-section of a second modified solar cell module taken along line XIX-XIX in FIG. 17 . FIG. 22 is a cross-sectional view schematically showing a cross section of a third alternative embodiment of the solar cell module taken along line XIX-XIX in FIG.Fig. 23 is a cross-sectional view schematically showing a cross section of a fourth modified embodiment of the solar cell module taken along line XIX-XIX in Fig. 17. Fig. 24 is a cross-sectional view showing the configuration of a fifth modified embodiment of the solar cell module taken along line XIX-XIX in Fig. 17. Fig. 25 is a cross-sectional view schematically showing a cross section of a sixth modified embodiment of the solar cell module taken along line XIX-XIX in Fig. 17.

[0010] The inventors have created a technology for improving the design of a solar cell module, which will be described below with reference to first to fourth embodiments with reference to the accompanying drawings.

[0011] Various embodiments will be described below with reference to the drawings. In the drawings, parts having the same or similar configurations and functions are designated by the same reference numerals, and redundant description will be omitted below. The drawings are schematic. A right-handed XYZ coordinate system is shown in FIGS. 1 to 24 . In this XYZ coordinate system, the direction in which the solar cell elements 4 are arranged is the +X direction, the longitudinal direction of the third grooves P3 located between adjacent solar cell elements 4 is the +Y direction, and the direction perpendicular to both the +X direction and the +Y direction is the +Z direction.

[0012] <1. First Embodiment> <1-1. Overview of Solar Cell Module> A solar cell module 1 according to a first embodiment will be described with reference to FIGS. 1 to 3. FIG.

[0013] As shown in FIG. 1, the solar cell module 1 has multiple cell regions 2. In a plan view, the multiple cell regions 2 are aligned in a plane along a first direction (+X direction). In the example of FIG. 1, five cell regions 2, namely, a first cell region 21 to a fifth cell region 25, are shown as the multiple cell regions 2. The first cell region 21 to the fifth cell region 25 are aligned in this order from the −X direction to the +X direction. In other words, the first cell region 21 is located at the end in the −X direction, and the fifth cell region 25 is located at the end in the +X direction. An inter-cell region 2g is located between the first cell region 21 and the second cell region 22. Inter-cell regions 2g are also located between the other cell regions 2.

[0014] Each cell region 2 has a rectangular shape with its longitudinal direction being a second direction (+Y direction) perpendicular to the first direction. The lengths of the cell regions 2 in the Y direction may be set equal for each of the multiple cell regions 2. The widths W of the cell regions 2 in the X direction may be different for each of the multiple cell regions 2. The widths W of each cell region 2 will be described in detail later.

[0015] As described below, each cell region 2 is provided with a solar cell element 4 that generates electricity based on incident light, such as sunlight. The solar cell elements 4 of the multiple cell regions 2 are electrically connected in series, as described below. The solar cell elements 4 of the first cell region 21, located at the end of the multiple cell regions 2 in the −X direction, are electrically connected to a first wiring member 91 for extracting power, and the solar cell elements 4 of the fifth cell region 25, located at the end of the multiple cell regions 2 in the +X direction, are electrically connected to a second wiring member 92 for extracting power. Because the solar cell elements 4 of the multiple cell regions 2 are connected in series, the DC currents flowing through the cell regions 2 are equal to each other. The DC currents are extracted to the outside of the solar cell module 1 via the first wiring member 91 and the second wiring member 92.

[0016] In this embodiment, at least one of the multiple cell regions 2 has multiple regions 20. The multiple regions 20 are adjacent to each other in a plan view, and the current densities in the multiple regions 20 are different from one another. That is, at least one of the cell regions 2 has a current density distribution in a plan view. The current density here refers to the amount of current per unit area. In the example of FIG. 1 , each of the first cell region 21 to the fifth cell region 25 has a first region 20a and a second region 20b as the multiple regions 20. In other words, in the example of FIG. 1 , the first region 20a and the second region 20b constitute each cell region 2. Note that in the example of FIG. 1 , the portion representing the first region 20a is hatched in a sandy pattern.

[0017] 1, in each cell region 2, at least a portion of one region 20 (e.g., the first region 20a) is positioned, for example, alongside at least a portion of another region 20 (e.g., the second region 20b) in the Y direction. Also, in each cell region 2, at least a portion of one region 20 may be positioned, for example, alongside at least a portion of another region 20 in the X direction.

[0018] Here, the current density in the first region 20a is greater than the current density in the second region 20b. Note that the current density may include zero. In other words, no current may flow in a part of the cell region 2 (here, the second region 20b).

[0019] As shown in Figures 1 to 3, each cell region 2 is formed by, for example, a solar cell element 4 and an object portion 5. In the example of Figure 2, the multiple solar cell elements 4 are shown as first to fifth solar cell elements 41 to 45 corresponding to the first to fifth cell regions 21 to 25, respectively. The solar cell elements 4 are located in the first region 20a in each cell region 2. Each solar cell element 4 generates carriers including electrons or holes based on incident light. The multiple solar cell elements 4 are connected to each other in series by connection portions 6. Therefore, a predetermined portion of the carriers generated in the solar cell elements 4 in each cell region 2 flows through the multiple cell regions 2 as direct current.

[0020] The object part 5 is located in the second region 20b in each cell region 2. As shown in FIG. 3 , the object part 5 is located in each cell region 2, for example, adjacent to a semiconductor layer 4b (described later) of a solar cell element 4. The material of the object part 5 may be different from that of the semiconductor layer 4b of the solar cell element 4. Therefore, for example, the band gap energy differs between the semiconductor layer 4b and the object part 5. The object part 5 may be, for example, an insulating layer 50. The material of the insulating layer 50 may be, for example, a transparent insulating material such as silicon oxide. When the object part 5 is an insulating layer 50, the object part 5 does not substantially generate extractable carriers.

[0021] 1 to 3, each cell region 2 is composed of a first region 20a and a second region 20b, and in each cell region 2, the semiconductor layer 4b and the object part 5 are located in the first region 20a and the second region 20b, respectively. Here, the band gap energies of the semiconductor layer 4b and the object part 5 are different, and therefore the degree of light absorption differs between the semiconductor layer 4b and the object part 5. Therefore, when a user looks at the solar cell module 1, the external color shades of the first region 20a and the second region 20b are different from each other.

[0022] 1, the entire first region 20a corresponds to the sun design region, the cloud design region, and the smiling face design region, and the entire second region 20b corresponds to the background region for these design regions. Therefore, when viewing the solar cell module 1 in a plan view, a user can see the sun, cloud, and smiling face designs.

[0023] 2 and 3 , the solar cell module 1 includes, for example, a first substrate 3, a plurality of solar cell elements 4, an object portion 5, a connection portion 6, a filler 7, a second substrate 8, first wiring members 91, and second wiring members 92. The first substrate 3 and the second substrate 8 are positioned opposite each other in the Z direction. The solar cell elements 4, the object portion 5, the connection portion 6, the filler 7, the first wiring members 91, and the second wiring members 92 are positioned between the first substrate 3 and the second substrate 8, and are integrated by the filler 7.

[0024] <1-2-1. First Substrate> The first substrate 3 can support and protect the multiple solar cell elements 4. The solar cell elements 4 are located on the surface of the first substrate 3. If the first substrate 3 is translucent to light in a specific wavelength range, light passing through the first substrate 3 can be incident on the multiple solar cell elements 4. The first substrate 3 may be, for example, a flat plate having a rectangular surface. One side of the first substrate 3 extends, for example, along the +X direction. If the first substrate 3 is made of glass or a resin such as acrylic or polycarbonate, a first substrate 3 translucent to light in a specific wavelength range can be realized. Examples of glass that can be used include materials with high light transmittance, such as white plate glass, tempered glass, and heat-reflecting glass. The first substrate 3 may also be a flexible substrate. In this specification, "light in a specific wavelength range" refers to light in a wavelength range that can be photoelectrically converted by the solar cell elements 4.

[0025] The solar cell module 1 may be installed with the first substrate 3 facing a light source. The light source may be the sun, for example, and the solar cell module 1 is positioned with the first substrate 3 facing the sun at its zenith point. In this case, the first substrate 3 is made of a light-transmitting material.

[0026] The solar cell module 1 may be installed with the second substrate 8 facing the light source. In this case, the second substrate 8 needs to be translucent, and the first substrate 3 does not need to be translucent. For example, the first substrate 3 may be a metal plate with an insulating layer formed on its surface.

[0027] In the following description, as an example, the solar cell module 1 is installed with the first substrate 3 facing the light source. In this case, incident light such as sunlight passes through the first substrate 3 and enters the multiple solar cell elements 4.

[0028] <1-2-2. Solar Cell Element and Object> The multiple solar cell elements 4 are arranged in a plane in the +X direction. Here, "arranged in a plane" means that each solar cell element 4 is positioned along a virtual or actual plane, and multiple solar cell elements 4 are arranged in a line. In the example of Fig. 2, the multiple solar cell elements 4 are arranged along the surface of the first substrate 3.

[0029] Each solar cell element 4 includes a first electrode layer 4a, a semiconductor layer 4b, and a second electrode layer 4c. The first electrode layer 4a is located on the first substrate 3, the semiconductor layer 4b is located on the first electrode layer 4a, and the second electrode layer 4c is located on the semiconductor layer 4b. In other words, the first electrode layer 4a, the semiconductor layer 4b, and the second electrode layer 4c are stacked in this order in the Z direction.

[0030] The first electrode layer 4 a has a higher translucency for light having a wavelength within a specific range than the translucency of the semiconductor layer 4 b. The first electrode layer 4 a may be made of, for example, a transparent conductive oxide (TCO) that is translucent for light having a wavelength within a specific range. Transparent conductive oxides may include, for example, indium tin oxide (ITO), fluorine-doped tin oxide (FTO), or zinc oxide (ZnO).

[0031] Incident light passes through the first substrate 3 and the first electrode layer 4a and enters the semiconductor layer 4b. The semiconductor layer 4b absorbs the light and generates carriers including holes or electrons. The carriers flow toward either the first electrode layer 4a or the second electrode layer 4c.

[0032] When the solar cell module 1 is installed with the second substrate 8 facing the light source, the first electrode layer 4 a does not need to be light-transmitting. For example, various metals may be used as the material for the first electrode layer 4 a.

[0033] In this embodiment, five first electrode layers 4a are arranged in order in a planar manner in the +X direction on the first substrate 3. Here, two first electrode layers 4a belonging to two adjacent solar cell elements 4 are arranged side by side with a gap (also referred to as a first gap) G1 between them. For example, the first electrode layer 4a of the first solar cell element 41 and the first electrode layer 4a of the second solar cell element 42 are arranged side by side with the first gap G1 between them. Each first gap G1 has an elongated shape with the +Y direction as its longitudinal direction. Furthermore, a first groove P1 is present, with the first substrate 3 serving as the bottom surface and two opposing end faces of the two first electrode layers 4a sandwiching the first gap G1 as side surfaces. The first groove P1 is a groove extending linearly along the +Y direction.

[0034] The first electrode layer 4a is located over at least the entire first region 20a in each cell region 2. The first electrode layer 4a may be located, for example, not only over the first region 20a but also over the entire second region 20b. That is, the first electrode layer 4a may be located over the entire cell region 2. The first electrode layer 4a extends in the −X direction from the cell region 2, and this extended portion is located in the inter-cell region 2g. The first electrode layer 4a has, for example, a rectangular shape in a plan view, and the length of the first electrode layer 4a in the Y direction is, for example, approximately equal to the length of the cell region 2 in the Y direction.

[0035] In each solar cell element 4, the semiconductor layer 4b is located between the first electrode layer 4a and the second electrode layer 4c. In a plan view, the semiconductor layer 4b is located across the entire first region 20a. The semiconductor layer 4b has a structure in which, for example, a layer (perovskite semiconductor layer) of a semiconductor having a perovskite structure (also referred to as a perovskite semiconductor) and a hole transport layer (HTL) are stacked. When the semiconductor layer 4b is a perovskite semiconductor, the light in the specific range of wavelengths includes visible light and infrared light.

[0036] The perovskite semiconductor may include, for example, a halide-based organic-inorganic perovskite semiconductor. If, for example, a semiconductor having a perovskite structure with an amine group is employed as the perovskite semiconductor, the photoelectric conversion efficiency in the semiconductor layer 4b may be increased. This may improve the photoelectric conversion efficiency in the solar cell element 4. Here, the semiconductor having a perovskite structure with an amine group may be, for example, an ABX perovskite structure in which A ions, B ions, and X ions are bonded. ３ The halide perovskite semiconductor having the following composition is applied: Here, the A ions include, for example, methylammonium ions (MA ＋ ), formamidinium ion (FA ＋ ) and guanidinium ion (GA ＋ The B ions include, for example, lead ions (Pb ２＋ ) and tin ions (Sn ２＋ The X ions are, for example, iodine ions (I － ), bromine ion (Br － ) and chloride ions (Cl － ) and other halide ions are applicable.

[0037] The perovskite semiconductor can be formed, for example, by applying a raw material liquid onto the first electrode layer 4a located on the first substrate 3 and drying the applied liquid. Here, the perovskite semiconductor is a crystalline thin film. At this time, for example, the raw material liquid is also filled into the first gap G1, and a portion of the perovskite semiconductor can also be formed in the first gap G1 by drying. Here, the raw material liquid can be generated, for example, by dissolving the raw materials, alkylamine halide and lead halide, in a solvent.

[0038] The hole transport layer (HTL) can collect and output holes, and is made of a material such as spiro-OMeTAD, a soluble diamine derivative.

[0039] Here, for example, if the perovskite semiconductor is an intrinsic semiconductor (i-type semiconductor), the hole transport layer is a p-type semiconductor, and the TCO constituting the first electrode layer 4a is an n-type semiconductor, a PIN junction region can be formed. In the PIN junction region, power can be generated by photoelectric conversion in response to irradiation with light. In the semiconductor layer 4b, for example, an n-type semiconductor layer can be located between the perovskite semiconductor layer and the first electrode layer 4a. In this case, the PIN junction region can be formed only by the semiconductor layer 4b.

[0040] In each cell region 2, the object portion 5 is located adjacent to the semiconductor layer 4b of the solar cell element 4. That is, the object portion 5 is located in the same layer as the semiconductor layer 4b. As shown in Figures 2 and 3, the object portion 5 is located, for example, over the entire second region 20b. In the example of Figures 2 and 3, the object portion 5 is located between the first electrode layer 4a and the second electrode layer 4c, and is in contact with the side surface of the semiconductor layer 4b. The object portion 5, together with the semiconductor layer 4b, can play a role in supporting the second electrode layer 4c.

[0041] The object portion 5 has a bandgap energy different from that of the semiconductor layer 4b. The difference between the bandgap energy of the object portion 5 and the bandgap energy of the semiconductor layer 4b may be, for example, 0.1 eV or more, 0.2 eV or more, or 0.5 eV or more. The bandgap energy of either the semiconductor layer 4b or the object portion 5 may be, for example, 1.7 eV or more. The object portion 5 may be, for example, an insulating layer 50 made of an insulator. Various insulators, such as silicon oxide or resin, may be used as the material for the insulating layer 50. The insulating layer 50 may be translucent to visible light. That is, the insulating layer 50 may be transparent or translucent. In the second region 20b of each cell region 2, the insulating layer 50 is located between the first electrode layer 4a and the second electrode layer 4c, thereby preventing a short circuit between the first electrode layer 4a and the second electrode layer 4c.

[0042] The semiconductor layer 4b and the insulating layer 50 may also be located in the inter-cell regions 2g. For example, in FIG. 1 , in the first groove P1 of each inter-cell region 2g, the first region 20a and the second region 20b are located adjacent to each other in the Y direction. Furthermore, between the second groove P2 (described below) and the third groove P3 (described below) in each inter-cell region 2g, the first region 20a and the second region 20b are also located adjacent to each other in the Y direction. In each inter-cell region 2g, the semiconductor layer 4b may be located in the first region 20a, and the insulating layer 50 may be located in the second region 20b. Therefore, in the inter-cell regions 2g (particularly, in the first groove P1 and the region between the second groove P2 and the third groove P3), the insulating layer 50 is also located adjacent to the semiconductor layer 4b in the Y direction.

[0043] In each solar cell element 4, the second electrode layer 4c is located on the semiconductor layer 4b and the insulating layer 50. The second electrode layer 4c may be highly translucent for light of a specific wavelength range. For example, the second electrode layer 4c may be made of a transparent conductive oxide (TCO) that is translucent for light of a specific wavelength range. Examples of transparent conductive oxides include indium tin oxide (ITO), fluorine-doped tin oxide (FTO), and zinc oxide (ZnO). In this case, light that passes through the solar cell element 4 and is reflected by the second substrate 8 or an external component may pass through the second electrode layer 4c again and enter the semiconductor layer 4b. This may improve the photoelectric conversion efficiency of the solar cell module 1. Note that the second electrode layer 4c does not necessarily have to be translucent and may be made of, for example, a metal. If the second electrode layer 4c is made of a metal, light that passes through the semiconductor layer 4b is reflected by the second electrode layer 4c, and the reflected light may enter the semiconductor layer 4b. This makes it possible to improve the photoelectric conversion efficiency of the solar cell module 1 .

[0044] In the first embodiment, five second electrode layers 4c are arranged in order in a planar manner in the +X direction. Here, the second electrode layers 4c belonging to two adjacent solar cell elements 4 are arranged with a gap (also referred to as a second gap) G2 sandwiched between them. For example, the second electrode layer 4c of the first solar cell element 41 and the second electrode layer 4c of the second solar cell element 42 are arranged with the second gap G2 sandwiched between them. Each second gap G2 has, for example, an elongated shape with the +Y direction as its longitudinal direction. Furthermore, a third groove P3 is present in the second gap G2. The third groove P3 has the first electrode layer 4a as its bottom surface and two opposing end faces of the two solar cell elements 4 sandwiching the second gap G2 as its side surfaces. The third groove P3 is a groove that penetrates the second electrode layer 4c, the semiconductor layer 4b, and the insulating layer 50 along the Z direction and extends linearly along the +Y direction.

[0045] The second electrode layer 4c is located at least throughout the first region 20a in each cell region 2. The second electrode layer 4c may be located, for example, throughout not only the first region 20a but also the second region 20b. That is, the second electrode layer 4c may be located throughout the entire cell region 2. The second electrode layer 4c extends in the +X direction from the cell region 2, and the extended portion is located in the inter-cell region 2g. In the inter-cell region 2g, the third groove P3 between the second electrode layers 4c is shifted in the +X direction from the first groove P1 between the first electrode layers 4a. Therefore, in the inter-cell region 2g, the end portion of the first electrode layer 4a in the −X direction and the end portion of the second electrode layer 4c in the +X direction overlap each other in a plan view. The semiconductor layer 4b or the object portion 5 is located between the end portion of the first electrode layer 4a and the end portion of the second electrode layer 4c. The second electrode layer 4c has, for example, a rectangular shape in a plan view, and the length of the second electrode layer 4c in the Y direction is, for example, approximately equal to the length of the cell region 2 in the Y direction.

[0046] The inter-cell region 2g is, for example, a region sandwiched between the edge of the first groove P1 in the -X direction and the edge of the third groove P3 in the +X direction. In the inter-cell region 2g, the solar cell elements 4 of adjacent cell regions 2 are electrically connected by connection portions 6 described below. The cell region 2 is, for example, a region sandwiched between the edge of the third groove P3 in the +X direction and the edge of the first groove P1 in the -X direction.

[0047] <1-2-3. Connections> The multiple connection portions 6 are located in the multiple inter-cell regions 2g, respectively, and connect the first electrode layer 4a and the second electrode layer 4c of two adjacent solar cell elements 4. In the example of FIG. 2, the multiple connection portions 6 are shown as a first connection portion 61 to a fourth connection portion 64. In the example of FIG. 2, the first connection portion 61 electrically connects the second electrode layer 4c of the first solar cell element 41 to the first electrode layer 4a of the second solar cell element 42, and the second connection portion 62 electrically connects the second electrode layer 4c of the second solar cell element 42 to the first electrode layer 4a of the third solar cell element 43. The third connection portion 63 electrically connects the second electrode layer 4c of the third solar cell element 43 to the first electrode layer 4a of the fourth solar cell element 44, and the fourth connection portion 64 electrically connects the second electrode layer 4c of the fourth solar cell element 44 to the first electrode layer 4a of the fifth solar cell element 45. This allows a plurality of solar cell elements 4 to be electrically connected in series.

[0048] The connection portion 6 is, for example, integrally formed with the second electrode layer 4c and made of the same material. The connection portion 6 is located in a state where it fills the second groove P2 located between the first groove P1 and the third groove P3, and is in contact with the first electrode layer 4a at the bottom surface of the second groove P2. This allows the connection portion 6 to electrically connect the first electrode layer 4a and the second electrode layer 4c. The second groove P2 has an elongated shape with its longitudinal direction in the +Y direction. The second groove P2 is also a groove that extends linearly along the +Y direction.

[0049] <1-2-4. Extraction Electrode> A first wiring member 91 for outputting a first polarity is located on an end portion 911 of the first electrode layer 4a of the first solar cell element 41, the end portion 911 extending further in the −X direction than the insulating layer 50 and the semiconductor layer 4b. The first wiring member 91 is formed of a metal such as copper. The first wiring member 91 may be copper foil, for example. For example, a joint such as solder may be interposed between the first wiring member 91 and the end portion 911. The first wiring member 91 is electrically connected to the end portion 911. As shown in FIG. 1 , the first wiring member 91 has an elongated shape with its longitudinal direction in the +Y direction.

[0050] In the example of FIG. 2 , an electrode layer 921 is located in the +X direction relative to the first electrode layer 4a of the fifth solar cell element 45. A first groove P1 exists between the electrode layer 921 and the first electrode layer 4a of the fifth solar cell element 45. The electrode layer 921 is, for example, made of the same material as the first electrode layer 4a and has, for example, an elongated shape with the +Y direction as the longitudinal direction in a plan view. The electrode layer 921 is electrically connected to the second electrode layer 4c of the fifth solar cell element 45. A second wiring member 92 for outputting a second polarity is located on the electrode layer 921. The second wiring member 92 is formed of a metal such as copper. The second wiring member 92 may be, for example, copper foil. For example, a joint such as solder may be interposed between the second wiring member 92 and the electrode layer 921. The second wiring member 92 is electrically connected to the electrode layer 921. 1, the second wiring member 92 has an elongated shape with its longitudinal direction aligned in the +Y direction. Here, for example, if the first polarity is negative, the second polarity is positive. For example, if the first polarity is positive, the second polarity is negative.

[0051] <1-2-5. Second Substrate> The second substrate 8 can serve to protect the multiple solar cell elements 4. The second substrate 8 is positioned opposite the first substrate 3 in the Z direction. For example, the second substrate 8 may be a flat plate having a rectangular surface identical or similar to that of the first substrate 3. The planar shape of the second substrate 8 may be the same as that of the first substrate 3. The second substrate 8 may or may not be translucent for light of a specific wavelength range. For example, glass or resins such as acrylic and polycarbonate may be used as the material for the second substrate 8, thereby realizing a second substrate 8 that is translucent for light of a specific wavelength range. Alternatively, the second substrate 8 may be a metal plate with an insulating layer formed on its surface. In this case, the second substrate 8 does not have translucency. Note that when the solar cell module 1 is installed with the second substrate 8 facing the light source, a translucent material is used as the material for the second substrate 8. Similarly to the first substrate 3, the second substrate 8 may be a flexible substrate.

[0052] <1-2-6. Filler> The insulating filler 7 is positioned between the first substrate 3 and the second substrate 8, covering the multiple solar cell elements 4, the insulating layer 50, the first wiring members 91, and the second wiring members 92. In other words, the filler 7 is positioned in a state where it fills the gap between the first substrate 3 and the second substrate 8. The filler 7 is translucent to light of a specific wavelength range, for example. Examples of materials used for the filler 7 include ethylene vinyl acetate copolymer (EVA), polyvinyl acetal such as polyvinyl butyral (PVB), and acid-modified resins. Here, for example, if relatively inexpensive EVA is used as the material for the filler 7, the ability to protect the multiple solar cell elements 4 can be easily achieved. Examples of acid-modified resins used include modified polyolefin resins that can be formed by graft-modifying resins such as polyolefins with acid. Examples of acids that can be used for graft-modifying the acid-modified resin include acrylic acid, methacrylic acid, maleic acid, fumaric acid, itaconic acid, maleic anhydride, himic anhydride, itaconic anhydride, and citraconic anhydride.

[0053] <1-2-7. Area of ​​Cell Region> In the specific example described above, the first region 20a of each cell region 2 includes a stacked structure of the first electrode layer 4a, the semiconductor layer 4b, and the second electrode layer 4c. Therefore, in the first region 20a, carriers are generated based on incident light, and a predetermined portion of these carriers flow as direct current. On the other hand, the second region 20b of each cell region 2 does not include the semiconductor layer 4b, but includes the insulating layer 50. Therefore, in the second region 20b, substantially no extractable carriers are generated, and substantially no current is generated. In other words, the current density of the direct current generated in the first region 20a is greater than the current density (=0) in the second region 20b.

[0054] Here, we consider the amount of carriers generated per unit time in each cell region 2. The larger the area of ​​the first region 20a, the greater the amount of carriers generated per unit time in each cell region 2. However, because the solar cell elements 4 of multiple cell regions 2 are connected in series with each other, only a certain amount of the generated carriers flows as direct current. In other words, carriers exceeding this certain amount cannot be extracted to the outside of the solar cell module 1. Therefore, if there is a large variation in the amount of carriers generated per unit time among the multiple cell regions 2, a large amount of carriers cannot be extracted to the outside, and the photoelectric conversion efficiency of the solar cell module 1 decreases.

[0055] Therefore, the present invention aims to reduce the variation in the amount of carriers generated per unit time among a plurality of cell regions 2. Hereinafter, the amount of carriers generated per unit time in a cell region 2 will also be referred to as the carrier generation amount.

[0056] As shown in FIG. 1 , the width W of a cell region 2 may be set wider as the area of ​​the second region 20b belonging to the cell region 2 (i.e., the area of ​​the insulating layer 50 in a plan view) increases. In other words, the area of ​​a cell region 2 increases as the area of ​​the second region 20b belonging to the cell region 2 increases. In the example of FIG. 1 , the second region 20b of the first cell region 21 is wider than the second region 20b of the second cell region 22, and the width W of the first cell region 21 is wider than the width W of the second cell region 22. This reduces the difference in area between the first region 20a of the first cell region 21 and the first region 20a of the second cell region 22. In other words, the variation in the area of ​​the first region 20a among the multiple cell regions 2 can be reduced. This reduces the variation in the amount of carrier generation among the multiple cell regions 2.

[0057] In short, the width W of each cell region 2 can be set as follows: That is, the width W of each cell region 2 is set so that the variation in the amount of carrier generation is smaller than the variation in the amount of carrier generation in a hypothetical structure in which multiple cell regions 2 have the same width. As a more specific example, the width W of the cell region 2 is set so as to satisfy the following formula:

[0058] J·r[k]·A[k] = constant (1) Here, J represents the amount of carriers generated per unit area and per unit time of the first region 20a when incident light is uniformly distributed in the solar cell module 1, A[k] represents the area of ​​the kth cell region 2, and r[k] represents the ratio of the area of ​​the first region 20a belonging to the kth cell region 2 to the area A[k]. When the cell region 2 is rectangular, the area A[k] is expressed as the product of the length of the kth cell region 2 in the Y direction and the width W in the X direction. The left side of equation (1) represents the amount of carriers generated in each cell region 2. Therefore, according to equation (1), the width W of each cell region 2 is set so that the amount of carriers generated is constant among the multiple cell regions 2.

[0059] Setting the width W of the cell region 2 as described above reduces the variation in the amount of carrier generation among the multiple cell regions 2. This allows for more efficient extraction of DC current from the solar cell module 1. In other words, a larger DC current can be extracted from the solar cell module 1, improving the photoelectric conversion efficiency of the solar cell module 1.

[0060] <1-3. Manufacturing Method of Solar Cell Module> Next, a manufacturing method of the solar cell module 1 will be described with reference to FIGS. 4 to 9. First, as shown in FIG. 4, a first substrate 3 is prepared. For example, the first substrate 3 may be a rectangular flat plate that is translucent to light in a specific wavelength range. Next, an electrode layer 4a0 is formed on one surface of the first substrate 3. The electrode layer 4a0 may be formed by a film formation method such as sputtering, evaporation, or chemical vapor deposition. The electrode layer 4a0 may be composed of a transparent conductive oxide such as ITO, FTO, or ZnO. In this case, the thickness of the electrode layer 4a0 may be set to, for example, approximately 10 nm to 1000 nm. As described above, the electrode layer 4a0 may be made of a metal. In this case, the electrode layer 4a0 may be formed by, for example, a coating method.

[0061] Next, as shown in FIG. 5 , the electrode layer 4a0 is separated into a plurality of first electrode layers 4a and electrode layers 921. For example, a plurality of first grooves P1 (first gaps G1) are formed, thereby forming a plurality of first electrode layers 4a and electrode layers 921. As a result, for example, the first to fifth first electrode layers 4a and electrode layers 921 are formed, aligned in a plane along the first direction (+X direction) on the surface of the first substrate 3. The plurality of first grooves P1 (first gaps G1) may be formed by scribing, such as laser scribing or mechanical scribing. Each first groove P1 (each first gap G1) may be formed so that its longitudinal direction is the +Y direction. Here, the width in the X direction of each first groove P1 (each first gap G1) is set to, for example, approximately 30 μm to 300 μm. The length in the Y direction of each first groove P1 is, for example, approximately equal to the length in the Y direction of the cell region 2.

[0062] The first electrode layer 4a and the electrode layer 921 may be patterned simultaneously with their deposition. For example, the first electrode layer 4a and the electrode layer 921 may be formed by applying a raw material liquid only to the required regions on the first substrate 3 by inkjet printing and then drying the raw material liquid. Alternatively, the first electrode layer 4a and the electrode layer 921 may be formed on the first substrate 3 using a mask having openings in a pattern corresponding to the shapes of the first electrode layer 4a and the electrode layer 921. This makes it possible to omit a removal process such as scribing for forming the first groove portion P1. The semiconductor layer 4b, the insulating layer 50, and the second electrode layer 4c described below may also be patterned simultaneously with their deposition, similar to the first electrode layer 4a.

[0063] Next, as shown in FIG. 6, a semiconductor layer 4b0 for the perovskite solar cell and an insulating layer 500 for the object portion 5 are formed on the plurality of first electrode layers 4a.

[0064] For example, first, the semiconductor layer 4b0 is formed over at least the entire first region 20a. The semiconductor layer 4b0 can be formed by, for example, applying a raw material liquid using a coating method such as inkjet printing, spraying, bar coating, or die coating, followed by drying. Here, the semiconductor layer 4b0 has a structure in which multiple layers including a perovskite semiconductor layer and a hole transport layer are stacked. In this case, for example, after the perovskite semiconductor layer is formed by applying and drying a first raw material liquid, the hole transport layer can be formed on the perovskite semiconductor layer by applying and drying a second raw material liquid. The thickness of the semiconductor layer 4b0 can be set to, for example, approximately 100 nm to 2000 nm. At this time, the semiconductor layer 4b0 also fills the portions of the multiple first groove portions P1 (first gaps G1) that correspond to the first region 20a.

[0065] Next, an insulating layer 500 is formed on the plurality of first electrode layers 4a in a region adjacent to the semiconductor layer 4b0. The insulating layer 500 is formed over the entire second region 20b. The insulating layer 500 can be formed, for example, by applying a raw material liquid using a coating method such as inkjet printing, spraying, bar coating, or die coating, and then drying the applied material. The thickness of the insulating layer 500 is, for example, approximately equal to the thickness of the semiconductor layer 4b0. At this time, the insulating layer 500 also extends into the portions of the plurality of first groove portions P1 (first gaps G1) that correspond to the second region 20b.

[0066] The order of forming the semiconductor layer 4b0 and the insulating layer 500 may be reversed.

[0067] Here, a description will be given of an example of a mode in which the semiconductor layer 4b0 and the insulating layer 500 are formed by an inkjet printer. For example, the inkjet printer includes a group of inkjet heads, a transport unit, a drying unit, and a control unit.

[0068] The inkjet head group includes one or more first inkjet heads that eject raw material liquid for the semiconductor layer 4b0 and a second inkjet head that ejects raw material liquid for the insulating layer 500. If the semiconductor layer 4b0 has multiple semiconductor layers, multiple first inkjet heads are positioned to eject raw material liquid corresponding to the multiple semiconductor layers, respectively. The one or more first inkjet heads and the second inkjet head are positioned side by side in the transport direction of the first substrate 3. The first inkjet head and the second inkjet head have an elongated shape that is long in the width direction perpendicular to the transport direction, and multiple ejection ports are formed in their lower end surfaces. The multiple ejection ports are positioned side by side in at least the width direction. The method for controlling the ejection of the raw material liquid from each ejection port may be, for example, a piezoelectric method in which the raw material liquid is ejected by applying voltage to a piezoelectric element (piezoelectric element) corresponding to each ejection port, or a thermal method in which the raw material liquid is ejected by applying electricity to a heater corresponding to each ejection port to heat the raw material liquid.

[0069] The transport unit moves the first substrate 3 relative to the inkjet group in the transport direction in a space below the inkjet group. The drying unit has, for example, a heater and heats the first substrate 3 to dry the raw material liquid. The drying unit can be located immediately after each first inkjet head and immediately after each second inkjet head in the transport direction.

[0070] The control unit controls the transport unit, the inkjet head group, and the drying unit. For example, the control unit controls the transport unit, the inkjet head group, and the drying unit according to a program stored in a non-volatile storage unit. The control unit also controls the transport unit and the inkjet head group based on region data. The region data is data indicating the region on the first substrate 3 where the semiconductor layer 4b0 is to be applied and the region on the first substrate 3 where the insulating layer 500 is to be applied. The region data is set, for example, by an operator. For example, the control unit ejects the raw material liquid from the nozzle of the first inkjet head corresponding to the region on the first substrate 3 where the semiconductor layer 4b0 is to be formed when the region is positioned directly below the first inkjet head, and the drying unit dries the raw material liquid. If the semiconductor layer 4b0 includes multiple semiconductor layers, the application by the first inkjet head and the drying by the drying unit are performed multiple times. The control unit ejects the raw material liquid from the nozzle of the second inkjet head corresponding to the region on the first substrate 3 where the insulating layer 500 is to be formed when the region is positioned directly below the second inkjet head. The drying unit dries the raw material liquid as needed. As a result, the semiconductor layer 4b0 and the insulating layer 500 are formed on the first substrate 3.

[0071] Next, an example of a method for forming the semiconductor layer 4b0 and the insulating layer 500 using a mask will be described. For example, a first mask having an opening corresponding to the region where the semiconductor layer 4b0 is to be formed is placed on the first substrate 3, and a raw material liquid for the semiconductor layer 4b0 is applied to the entire surface, including the opening of the first mask, and then dried. If the semiconductor layer 4b0 includes multiple semiconductor layers, the application and drying using the first mask is performed multiple times. Next, the first mask is removed, and a second mask having an opening corresponding to the region where the insulating layer 500 is to be formed is placed on the first substrate 3. Next, a raw material liquid for the insulating layer 500 is applied to the entire surface, including the opening of the second mask, and then dried.

[0072] Next, as shown in FIG. 7 , a plurality of second grooves P2 are formed to connect the first electrode layer 4a and the second electrode layer 4c. The second grooves P2 can be formed, for example, by scribing. Each second groove P2 extends along the +Y direction and is formed in the semiconductor layer 4b0 and the insulating layer 500. Here, the width of each second groove P2 in the X direction is set to, for example, approximately 30 μm to 300 μm. The length of the second groove P2 in the Y direction is, for example, approximately equal to the length of the cell region 2 in the Y direction.

[0073] Next, as shown in FIG. 8 , a second electrode layer 4c0 is formed on the semiconductor layer 4b0 and the insulating layer 500 in which the second grooves P2 are formed. Here, the second electrode layer 4c0 may be formed, for example, by a film formation method such as sputtering, evaporation, or chemical vapor deposition. The second electrode layer 4c0 may be composed of a transparent conductive oxide such as ITO, FTO, or ZnO. The thickness of the second electrode layer 4c0 may be set to, for example, approximately 10 nm to 1000 nm. At this time, the second electrode layer 4c0 is embedded in each of the second grooves P2. This forms the first connection portion 61, the second connection portion 62, the third connection portion 63, and the fourth connection portion 64. As described above, the second electrode layer 4c0 may be made of a metal. In this case, the second electrode layer 4c0 may be formed, for example, by a coating method.

[0074] Next, as shown in FIG. 9 , the second electrode layer 4c0 is separated into a plurality of second electrode layers 4c. For example, a plurality of third grooves P3 (second gaps G2) are formed, thereby forming a plurality of second electrode layers 4c. The third grooves P3 can be formed, for example, by scribing. The semiconductor layer 4b0 is also separated into a plurality of semiconductor layers 4b as appropriate, and the insulating layer 500 is also separated into a plurality of insulating layers 50. By forming the third grooves P3, a plurality of solar cell elements 4 connected in series with each other are formed.

[0075] Next, the first wiring member 91 is joined to an end portion 911 of the first electrode layer 4a located at the end in the −X direction, and the second wiring member 92 is joined to the electrode layer 921. For example, by soldering, the first wiring member 91 is joined to the end portion 911, and the second wiring member 92 is joined to the electrode layer 921.

[0076] Next, a sheet that will be the base of the filler 7 and the second substrate 8 are layered in this order on the structure shown in Fig. 9. Then, these are integrated by lamination processing to produce the solar cell module 1.

[0077] Furthermore, if necessary, a frame (not shown) may be attached to the peripheral edges of the first substrate 3 and the second substrate 8. The frame is a metal or resin member that seals the gap between the first substrate 3 and the second substrate 8.

[0078] <1-4. Summary of First Embodiment> In the solar cell module 1 according to the first embodiment, at least one of the multiple cell regions 2 has multiple regions 20 with different current densities. In the example of FIG. 1 , each of the multiple cell regions 2 has a first region 20a and a second region 20b as the multiple regions 20. In the specific example described above, the first region 20a and the second region 20b each have a semiconductor layer 4b and an object portion 5 with different band gap energies. In the example described above, the object portion 5 is an insulating layer 50, and therefore the current density in the second region 20b is substantially zero. Therefore, the current density in the first region 20a is greater than the current density in the second region 20b.

[0079] The semiconductor layer 4b and the object portion 5 have different band gap energies, and therefore have different degrees of absorption of incident light. As a result, the first region 20a and the second region 20b have different external colors. Since the first region 20a and the second region 20b have different colors, the design of the solar cell module 1 can be improved.

[0080] In the above example, in each cell region 2, at least a portion of the first region 20a is aligned with at least a portion of the second region 20b in the Y direction, and at least a portion of the first region 20a is aligned with at least a portion of the second region 20b in the X direction. This allows a two-dimensional design to be depicted on the solar cell module 1. For example, in FIG. 1 , the design regions showing the sun, clouds, and smiling faces correspond to the first region 20a, and the background region surrounding the design regions corresponds to the second region 20b. This allows a user to visually recognize the sun, clouds, and smiling faces on the solar cell module 1.

[0081] Furthermore, in the above example, among the multiple cell regions 2, not only the first cell region 21 and the fifth cell region 25 located at both ends in the X direction, but also the second cell region 22 to the fourth cell region 24 located in the center have multiple regions 20. In this way, since at least one of the cell regions 2 located in the center has multiple regions 20, it is possible to form a design in a more noticeable region.

[0082] Furthermore, in the above example, the width W of each cell region 2 is set so as to reduce the variation in the amount of carrier generation among the multiple cell regions 2. Therefore, the carriers generated in each cell region 2 can be more effectively utilized to pass a direct current through the multiple cell regions 2. In other words, the portion of the generated carriers that does not flow as a direct current can be reduced.

[0083] 1, the multiple first regions 20a are located apart from one another in each cell region 2. For example, in the second cell region 22, the first region 20a as a part of the design region imitating the sun and the first region 20a as a part of the design region imitating the smiling face are separated from one another by the second region 20b as a background region. Therefore, in each cell region 2, the multiple semiconductor layers 4b are located apart from one another in a planar view, and an insulating layer 50 is located between the multiple semiconductor layers 4b.

[0084] In the above example, in each cell region 2, the first electrode layer 4a and the second electrode layer 4c are located throughout the corresponding cell region 2. Therefore, in each cell region 2, the surfaces of the multiple semiconductor layers 4b in the -Z direction are connected to a common first electrode layer 4a, and the surfaces of the multiple semiconductor layers 4b in the +Z direction are connected to a common second electrode layer 4c (see also FIG. 3). Therefore, even if the multiple semiconductor layers 4b are spaced apart from each other in each cell region 2, the current generated by the multiple semiconductor layers 4b can be appropriately passed through the first electrode layer 4a and the second electrode layer 4c. In other words, by forming the multiple first regions 20a spaced apart from each other in each cell region 2, the solar cell module 1 can be designed more freely, while the current generated in each first region 20a can be appropriately extracted to the outside.

[0085] Furthermore, when the semiconductor layer 4b and the object portion 5 are formed by inkjet printing, the shapes of the first region 20a and the second region 20b can be easily changed. As described above, an inkjet printer has multiple outlets for discharging the raw material liquid, and by individually controlling whether or not the raw material liquid is discharged for each outlet, the region to which the raw material liquid is applied can be easily changed. This makes it easy to change the design. Specifically, an operator simply resets the region data.

[0086] <1-5. Alternative Embodiments> In the above-described specific example, a perovskite semiconductor layer was used as the semiconductor layer 4b. However, this is not necessarily limited to this. Thin-film semiconductors other than perovskite semiconductors can also be used as the semiconductor layer 4b. For example, various organic semiconductors other than perovskite semiconductors may also be used. Alternatively, silicon-based, compound-based, or other types of semiconductors may also be used. Examples of silicon-based thin-film semiconductors include semiconductors using amorphous silicon or thin-film polycrystalline silicon. Examples of compound-based thin-film semiconductors include compound semiconductors having a chalcopyrite structure, such as CIS semiconductors or CIGS semiconductors, compound semiconductors having a kesterite structure, or cadmium telluride (CdTe) semiconductors. CIS semiconductors are compound semiconductors containing copper (Cu), indium (In), and selenium (Se). CIGS semiconductors are compound semiconductors containing Cu, In, gallium (Ga), and Se. These thin-film semiconductors can be formed on the first electrode layer 4a by, for example, vapor deposition. The semiconductor layer 4b can be patterned by, for example, laser scribing or mechanical scribing. Of course, it is also possible to omit the removal process such as scribing by using a mask to deposit the semiconductor layer 4b only in the required region.

[0087] 2. Second embodiment 2-1. Configuration of solar cell module In the first embodiment, as shown in Fig. 10, first region 20a to fourth region 20d may be located as multiple regions 20 having different current densities. In the example of Fig. 10, first region 20a corresponds to the design region showing the sun, third region 20c corresponds to the design region showing a smiling face, fourth region 20d corresponds to the design region showing clouds, and second region 20b corresponds to the background region for these design regions.

[0088] 10 , semiconductor layers 4b1, 4b3, and 4b4 are located in the first region 20a, the third region 20c, and the fourth region 20d, respectively, as the semiconductor layer 4b. That is, semiconductor layer 4b1 is located throughout the first region 20a, semiconductor layer 4b3 is located throughout the third region 20c, and semiconductor layer 4b4 is located throughout the fourth region 20d. Furthermore, semiconductor layer 4b2 is located in the second region 20b as the object portion 5. That is, semiconductor layer 4b2 is located throughout the second region 20b. Since the first region 20a to the fourth region 20d are adjacent to each other in a planar view, semiconductor layers 4b1 to 4b4 are located at different positions from each other in a planar view.

[0089] Each of the semiconductor layers 4b1 to 4b4 has a configuration identical to or similar to that of the semiconductor layer 4b according to the first embodiment. As a specific example, each of the semiconductor layers 4b1 to 4b4 has a structure in which a perovskite semiconductor layer and a hole transport layer are stacked. As shown in FIG. 11 , the semiconductor layer 4b2, which is the object part 5, is also located between the first electrode layer 4a and the second electrode layer 4c, and therefore also functions as part of the solar cell element 4. In other words, the semiconductor layer 4b2, which is the object part 5, also generates a current based on incident light, and the current flows through the first electrode layer 4a, the semiconductor layer 4b2, and the second electrode layer 4c.

[0090] However, the composition ratio of the perovskite semiconductor layers is different among the semiconductor layers 4b1 to 4b4. Here, a halide perovskite semiconductor is used as the perovskite semiconductor. The material may be, for example, methylammonium ion (MA ＋ ) and lead ions (Pb ２＋ ) and halide ions (I － ,Br － ) and MAPb(I,Br) ３In this case, for example, by increasing the value obtained by dividing the I content by the sum of the I content and the Br content (also referred to as the Br content ratio x), the band gap energy of the halogenated perovskite semiconductor can be increased from 1.5 eV to 2.3 eV. As a result, for example, when semiconductor layer 4b4 is viewed from semiconductor layer 4b1, the apparent color can be changed from a color close to black to a color close to yellow.

[0091] FIG. 12 shows the MAPb (I １－ｘ Br ｘ ) ３ The wavelength dependence of the absorbance of a light-absorbing layer having a composition of x is shown. In the example of FIG. 12, graphs Gr1 to Gr7 are shown. Graphs Gr1 to Gr7 show the absorbance of the light-absorbing layer when x = 0.0, 0.12, 0.26, 0.42, 0.59, 0.72, and 0.95, respectively. The band gap energies of the light-absorbing layer when x = 0.0, 0.12, 0.26, 0.42, 0.59, 0.72, and 0.95 are 1.56 eV, 1.62 eV, 1.69 eV, 1.79 eV, 1.96 eV, 2.01 eV, and 2.23 eV, respectively. When x = 0.0, x = 0.12, or x = 0.26, the absorbance is high over a wide range of visible light (see graphs Gr1 to Gr3 in FIG. 12). Therefore, the apparent color is close to black. When x = 0.42 or x = 0.59, the apparent color is close to brown, when x = 0.72, the apparent color is close to red, and when x = 0.95, the apparent color is close to yellow. As described above, the color tone of the light-absorbing layer changes as the Br content ratio x changes. Here, if the difference in band gap energy between the light-absorbing layers is 0.1 or more, it is possible to roughly recognize the difference in color between the light-absorbing layers.

[0092] The Br content ratios x of the perovskite semiconductor layers 4b1 to 4b4 differ from one another to such an extent that the difference in band gap energy is 0.1 or more. The difference between the minimum and maximum band gap energies of the multiple semiconductor layers 4b may be, for example, 0.2 eV or more, or 0.5 eV or more. The band gap energy of at least one of the semiconductor layers 4b1 to 4b4 is, for example, 1.7 eV or more.

[0093] According to the second embodiment, due to the difference in band gap energy, the first region 20a where the semiconductor layer 4b1 is located, the second region 20b where the semiconductor layer 4b2 is located, the third region 20c where the semiconductor layer 4b3 is located, and the fourth region 20d where the semiconductor layer 4b4 is located can have different external colors, thereby further improving the design of the solar cell module 1.

[0094] <2-2. Area of ​​Cell Region> In the second embodiment, the width W of each cell region 2 can also be set as follows. That is, the width W of each cell region 2 is set so that the variation in the amount of carrier generation is smaller than the variation in the amount of carrier generation in a hypothetical structure in which multiple cell regions 2 have the same width. As a more specific example, the width W of the cell region 2 is set so as to satisfy the following formula:

[0095] Σ(J[k,m]·r[k,m]·A[k])=constant (2) Here, Σ(Z[m]) represents the sum of Z[m] for the number of m-th regions 20 in each cell region 2 (i.e., the value of m), J[k,m] represents the amount of carriers generated per unit area and per unit time in the m-th region 20 of the k-th cell region 2, A[k] represents the area of ​​the k-th cell region 2, and r[k,m] represents the ratio of the area of ​​the m-th region 20 belonging to the k-th cell region 2 to the area A[k]. When the cell region 2 is rectangular, the area A[k] is expressed as the product of the length of the cell region 2 in the Y direction and the width W in the X direction. The left side of equation (2) represents the amount of carriers generated in each cell region 2. Therefore, according to equation (2), the width W of each cell region 2 is set so that the amount of carriers generated is constant among multiple cell regions 2.

[0096] As a general rule, in each cell region 2, the greater the ratio J[k, m] of the area of ​​the region 20 with the largest amount of carrier generation per unit area and unit time among the multiple regions 20, the narrower the width W of the cell region 2 is set.

[0097] Setting the width W of the cell region 2 as described above reduces the variation in the amount of carrier generation among the multiple cell regions 2. This allows direct current to be extracted more efficiently from the solar cell module 1. In other words, the photoelectric conversion efficiency of the solar cell module 1 can be improved.

[0098] In the above specific example, semiconductor layers 4b1 to 4b4 are illustrated, but the number of types of semiconductor layers 4b having different composition ratios is not limited to four, and may be two or more. Furthermore, the insulating layer 50 as the object portion 5 and the multiple types of semiconductor layers 4b may be positioned adjacent to each other in a planar view. In the above example, the multiple types of semiconductor layers 4b may have the same composition and different composition ratios, but the multiple types of semiconductor layers 4b having different compositions may be positioned adjacent to each other in a planar view.

[0099] 3. Third Embodiment In the first embodiment, as shown in FIG. 13 , in each cell region 2, the first region 20a may not be separated into multiple parts and may be continuous from the −X-direction end of the cell region 2 to the +X-direction end. In the example of FIG. 13 , each cell region 2 is formed by a first region 20a and a second region 20b. In the example of FIG. 13 , the first region 20a corresponds to a design region schematically showing a heart, and the second region 20b corresponds to a background region for the design region. In the example of FIG. 13 , the first region 20a is located adjacent to the second region 20b in the Y direction. A semiconductor layer 4b belonging to the solar cell element 4 is located throughout the first region 20a, and an object portion 5 is located throughout the second region 20b. Here, the object portion 5 includes an insulator.

[0100] 14 to 16, at least one of the first electrode layer 4a and the second electrode layer 4c belonging to the solar cell element 4 may be located so as to avoid the second region 20b. In other words, at least one of the first electrode layer 4a and the second electrode layer 4c may be located so as to avoid the region (second region 20b) that overlaps with the object part 5 in a plan view.

[0101] In the example of FIG. 14 , in each cell region 2, the second electrode layer 4c is not located in the second region 20b. In each cell region 2, for example, a portion of the filler 7 is located throughout the entire second region 20b. This portion of the filler 7 is located in the second region 20b, extending continuously from the surface of the first electrode layer 4a to the surface of the second substrate 8. This portion of the filler 7 is also located in contact with the side surfaces of the semiconductor layer 4b and the second electrode layer 4c. With this structure, the object portion 5 adjacent to the semiconductor layer 4b in a planar view corresponds to this portion of the filler 7. Because the filler 7 is an insulator, the band gap energy of the filler 7 differs from the band gap energy of the semiconductor layer 4b. Therefore, the external colors of the first region 20a and the second region 20b differ from each other. This improves the design of the solar cell module 1.

[0102] Furthermore, the first region 20a in which the semiconductor layer 4b is located is located in a continuous state from the −X direction end to the +X direction end of each cell region 2. Therefore, the first electrode layer 4a and the second electrode layer 4c are also located in a continuous state from the −X direction end to the +X direction end of each cell region 2. Furthermore, the first electrode layer 4a is located in a state extending from the −X direction end of the cell region 2 into the inter-cell region 2g, and the second electrode layer 4c is located in a state extending from the +X direction end of the cell region 2 into the inter-cell region 2g. The connection portion 6 electrically connects the first electrode layer 4a and the second electrode layer 4c in the inter-cell region 2g, so that the solar cell elements 4 of multiple cell regions 2 can be connected in series with each other.

[0103] In the example of Figure 15, in each cell region 2, neither the first electrode layer 4a nor the second electrode layer 4c is located in the second region 20b. In the example of Figure 15, a portion of the filler 7 is located in the second region 20b in each cell region 2. This portion of the filler 7 is located in the second region 20b, extending continuously from the surface of the first substrate 3 to the surface of the second substrate 8. This portion of the filler 7 is located in contact with the side surfaces of the first electrode layer 4a, the semiconductor layer 4b, and the second electrode layer 4c. Even in this structure, the object portion 5 adjacent to the semiconductor layer 4b in a planar view corresponds to this portion of the filler 7. Even in this structure, the external colors of the first region 20a and the second region 20b are different from each other, thereby improving the design of the solar cell module 1.

[0104] In addition, in the examples of Figures 14 and 15, since the object part 5 is part of the filler 7, there is no need to position the object part 5 separately from the filler 7, which reduces the manufacturing cost of the solar cell module 1.

[0105] 16 , in each cell region 2, the first electrode layer 4a is not located in the second region 20b. The object portion 5 is located throughout the second region 20b of each cell region 2. The object portion 5 is located adjacent to the first electrode layer 4a and the semiconductor layer 4b and is located in the same layer as these. For example, the object portion 5 is located in contact with the side surface of the first electrode layer 4a and the side surface of the semiconductor layer 4b.

[0106] In each cell region 2, the second electrode layer 4c is located across both the first region 20a and the second region 20b. That is, the second electrode layer 4c is located on the semiconductor layer 4b and the object portion 5. The object portion 5 serves to support the second electrode layer 4c together with the semiconductor layer 4b.

[0107] The object portion 5 may be, for example, an insulating layer 50, or a semiconductor layer having a band gap energy different from that of the semiconductor layer 4b. In this way, the first region 20a and the second region 20b have different external colors, thereby improving the design of the solar cell module 1.

[0108] 17 to 19 , in the first embodiment, the object portion 5 may not be located, but the solar cell element 4 may be located, in each cell region 2 of the solar cell module 1. In other words, the first electrode layer 4 a, the semiconductor layer 4 b, and the second electrode layer 4 c may be located in a stacked state across the entirety of each cell region 2.

[0109] 17 to 19, the solar cell module 1 also includes an absorbing member 10. The absorbing member 10 is located, for example, throughout the second region 20b, and is not located in the first region 20a. In other words, the absorbing member 10 is located so as to avoid the first region 20a. In the example of FIG. 17, the first region 20a corresponds to the design region, and the second region 20b corresponds to the background region. The absorbing member 10 has, for example, a plate shape, and is located with its thickness direction along the normal to the surface 3a of the first substrate 3. The surface 3a is the surface of the first substrate 3 opposite the solar cell element 4.

[0110] The absorbing member 10 is located, for example, closer to the light source than the light absorbing layer of the semiconductor layer 4 b. Here, as an example, the solar cell module 1 is set in an orientation in which the first substrate 3 faces the light source. In the examples of Figures 18 and 19 , the absorbing member 10 is located on the surface 3 a of the first substrate 3.

[0111] The absorbing member 10 absorbs light within at least a portion of the wavelength range of incident light. The wavelength range absorbed by the absorbing member 10 includes part or all of the wavelength range of visible light. The peak absorptance of the absorbing member 10 within this wavelength range may be, for example, 30% or more, 50% or more, 70% or more, or 90% or more. The absorbing member 10 may be, for example, a colored transparent or opaque coating film. Alternatively, the absorbing member 10 may contain a colorant such as a pigment or dye that absorbs light. Alternatively, the absorbing member 10 may be a semiconductor layer that absorbs part or all of the wavelength range of visible light.

[0112] The absorbing member 10 can be formed on the surface 3 a of the first substrate 3 by a film formation method such as coating, vapor deposition, sputtering, chemical vapor deposition, or plating. The absorbing member 10 can be patterned by laser or plasma etching, mechanical scribing, or the like. Alternatively, the absorbing member 10 can be formed using a mask or by inkjet printing, thereby eliminating the need for removal processes such as etching and scribing.

[0113] Alternatively, the absorbing member 10 may be formed on a substrate such as a transparent film. In this case, the substrate may be adhered to the surface 3 a of the first substrate 3 .

[0114] In each cell region 2, the first electrode layer 4a, the semiconductor layer 4b, and the second electrode layer 4c of the solar cell element 4 may be located throughout the entire cell region 2. That is, in a plan view, the first electrode layer 4a, the semiconductor layer 4b, and the second electrode layer 4c have, for example, a rectangular shape with the +Y direction as the longitudinal direction. The Y-direction length of the first electrode layer 4a, the semiconductor layer 4b, and the second electrode layer 4c is, for example, approximately equal to the Y-direction length of the cell region 2. The first electrode layer 4a extends from the −X-direction end of the cell region 2 into the inter-cell region 2g, and the semiconductor layer 4b and the second electrode layer 4c extend from the +X-direction end of the cell region 2 into the inter-cell region 2g. In the inter-cell region 2g, a connection portion 6 electrically connects the first electrode layer 4a and the second electrode layer 4c. This allows the multiple solar cell elements 4 to be connected in series with each other. The light-absorbing layer of the semiconductor layer 4b is, for example, a perovskite semiconductor layer. The Br content ratio x of the light absorbing layer may be, for example, 0.4 or more. In this case, the solar cell element 4 can generate electricity based on light in the wavelength range absorbed by the absorbing member 10.

[0115] In the second region 20b, incident light such as sunlight passes through the absorbing member 10 and the first substrate 3 and enters the solar cell element 4. On the other hand, in the first region 20a, incident light passes through the first substrate 3 without passing through the absorbing member 10 and enters the solar cell element 4. Therefore, the amount of incident light that enters the semiconductor layer 4b in the first region 20a differs from the amount of incident light that enters the semiconductor layer 4b in the second region 20b. Here, because the absorbing member 10 is located in the second region 20b, the amount of light in the first region 20a is greater than the amount of light in the second region 20b.

[0116] Therefore, the current density of the current generated by the solar cell element 4 in the first region 20 a is greater than the current density of the current generated by the solar cell element 4 in the second region 20 b. In other words, in each cell region 2, the current densities in the multiple regions 20 are different from each other in the fourth embodiment as well.

[0117] Furthermore, in the fourth embodiment, as described above, the absorbing member 10 is located throughout the second region 20b, but not in the first region 20a. In other words, each cell region 2 has multiple regions 20 with different absorptance spectra (i.e., spectral absorptance) for incident light. Therefore, for example, the external color shades of the multiple regions 20, for example, the external color shades of the first region 20a and the second region 20b, are different from each other. This allows for an improved design of the solar cell module 1.

[0118] In the above example, among the multiple cell regions 2, not only the first cell region 21 and the fifth cell region 25 located at both ends in the X direction, but also the second cell region 22 to the fourth cell region 24 located in the center have multiple regions 20. In this way, since at least one of the cell regions 2 located in the center has multiple regions 20, it is possible to form a design in a more noticeable region.

[0119] 17 , the widths W of the cell regions 2 may be different from one another. Specifically, the widths W of the cell regions 2 may be set so as to reduce variations in the amount of carrier generation. In other words, the widths W of the cell regions 2 may be set so that variations in the amount of carrier generation among the plurality of cell regions 2 are smaller than the variations in the amount of carrier generation in a hypothetical structure in which the plurality of cell regions 2 have the same width. As a more specific example, the widths W of the cell regions 2 may be set based on equation (2).

[0120] As described above, by setting the width W of the cell region 2, it is possible to reduce the variation in the amount of carrier generation among the multiple cell regions 2. As a result, it is possible to extract DC current from the solar cell module 1 more efficiently.

[0121] Furthermore, in the above example, the absorbing member 10 is located on the surface 3a of the first substrate 3. In other words, the absorbing member 10 is not located between the first electrode layer 4a and the second electrode layer 4c of the solar cell element 4. Therefore, the direct current flowing through the solar cell element 4 does not pass through the absorbing member 10. Therefore, the absorbing member 10 does not interfere with the power generation of the solar cell element 4, and is unlikely to cause a decrease in the photoelectric conversion efficiency of the solar cell module 1.

[0122] <4-1-1. First Alternative Embodiment> As shown in Fig. 20 , the absorbing member 10 may be located on the surface 3b of the first substrate 3. The surface 3b is the surface opposite to the surface 3a of the first substrate 3. In the example of Fig. 20 , the first electrode layer 4a is located on the first substrate 3 and the absorbing member 10. In each cell region 2, the absorbing member 10 is, for example, sandwiched and covered by the first substrate 3 and the first electrode layer 4a.

[0123] The absorbing member 10 may be located inside the first substrate 3. For example, when the first substrate 3 is formed of a plurality of insulating layers, the absorbing member 10 may be located between any two of the plurality of insulating layers.

[0124] 21 , the absorbing member 10 may be located on a surface 4ab of the first electrode layer 4a. The surface 4ab is the surface of the first electrode layer 4a on the semiconductor layer 4b side. Therefore, in each cell region 2, the absorbing member 10 is sandwiched and covered by the first electrode layer 4a and the semiconductor layer 4b.

[0125] <4-1-3. Third Alternative Embodiment> As shown in FIG. 22 , the absorbing member 10 may be located inside the semiconductor layer 4b. In the example of FIG. 22 , the semiconductor layer 4b is a semiconductor multilayer film including multiple semiconductor layers 4ba to 4bd. Here, the semiconductor layer 4bd is located on the first electrode layer 4a, the semiconductor layer 4bc is located on the semiconductor layer 4bd, the semiconductor layer 4bb is located on the semiconductor layer 4bc, the semiconductor layer 4ba is located on the semiconductor layer 4bb, the second electrode layer 4c is located on the semiconductor layer 4ba, and the semiconductor layer 4bb is a light-absorbing layer. The absorbing member 10 is located closer to the light source than the semiconductor layer 4bb, that is, closer to the first substrate 3. In the example of FIG. 22 , the absorbing member 10 is located on the surface of the semiconductor layer 4bd facing the second electrode layer 4c. The semiconductor layer 4bc is located on the semiconductor layer 4bd and the absorbing member 10. In each cell region 2, the absorbing member 10 is sandwiched and covered by the semiconductor layer 4bc and the semiconductor layer 4bd.

[0126] The number of layers in the semiconductor layer 4b can be changed as appropriate. In short, it is only necessary that the absorbing member 10 is located closer to the light source than the light absorbing layer within the semiconductor layer 4b.

[0127] 4-1-4. Fourth Alternative Embodiment Next, a case where the solar cell module 1 is installed with the second substrate 8 facing the light source will be described. As shown in Fig. 23 , the absorbing member 10 may be located on the surface 8a of the second substrate 8. The surface 8a is the surface of the second substrate 8 on the opposite side from the filler 7.

[0128] 24 , the absorbing member 10 may be located on the surface 8b of the second substrate 8. The surface 8b is the surface of the second substrate 8 opposite to the surface 8a. The filler 7 is located in a state of being adhered to the second substrate 8 and the absorbing member 10. The absorbing member 10 is sandwiched and covered by the second substrate 8 and the filler 7.

[0129] The absorbing member 10 may be located inside the second substrate 8. For example, when the second substrate 8 is formed of a plurality of insulating layers, the absorbing member 10 may be located between any two of the plurality of insulating layers.

[0130] 25, the absorbing member 10 may be located on a surface 4ca of the second electrode layer 4c. The surface 4ca is the surface of the second electrode layer 4c opposite to the semiconductor layer 4b. The filler 7 is located in a state of being adhered to the solar cell element 4 and the absorbing member 10. The absorbing member 10 is sandwiched and covered by the filler 7 and the second electrode layer 4c.

[0131] In the first to sixth alternative embodiments described above, the absorbing member 10 is positioned throughout the second region 20b in a plan view, but is not positioned in the first region 20a. Therefore, the first region 20a and the second region 20b have different external colors. This improves the design of the solar cell module 1.

[0132] Furthermore, according to the first to third, fifth and sixth variants, the absorbing member 10 is located between the first substrate 3 and the second substrate 8, so that the absorbing member 10 can be protected from the external space. Therefore, the design of the solar cell module 1 can be maintained for a longer period of time.

[0133] Furthermore, according to the first, second, and fourth to sixth variants, the absorbing member 10 is positioned to avoid being between the first electrode layer 4 a and the second electrode layer 4 c. Therefore, the DC current does not pass through the absorbing member 10.

[0134] <4-1-7. Others> In the above example, the absorbing member 10 is located only in the second region 20b, but it may also be located only in the first region 20a. In this case, too, the design of the solar cell module 1 can be improved. Furthermore, multiple types of absorbing members 10 having different absorptance spectra may be located dispersedly in a planar view. That is, three or more regions 20 may be located. For example, multiple types of absorbing members 10 having different external colors may each be located in multiple regions 20. For example, with reference to FIG. 10 , different absorbing members 10 may be located in the first region 20a to the fourth region 20d, respectively. This can further improve the design of the solar cell module 1.

[0135] 17 to 19, the solar cell module 1 may include a reflective member 11. That is, the reflective member 11 may be positioned instead of the absorbing member 10. For example, the reflective member 11 is positioned over the entire second region 20b, but not in the first region 20a. That is, the reflective member 11 is positioned to avoid the first region 20a. In the examples of FIGS. 18 and 19, the reflective member 11 is positioned on the surface 3a of the first substrate 3. The reflective member 11 has, for example, a plate-like shape, and is positioned with its thickness direction along the normal to the surface 3a of the first substrate 3.

[0136] The reflective member 11 reflects light within at least a portion of the wavelength range of incident light. The wavelength range reflected by the reflective member 11 includes part or all of the wavelength range of visible light. The peak reflectance of the reflective member 11 within this wavelength range may be, for example, 30% or more, 50% or more, 70% or more, or 90% or more. The reflective member 11 may be, for example, a metal film. Alternatively, the reflective member 11 may contain a coloring matter such as a pigment or dye that reflects light. Alternatively, the reflective member 11 may be a semiconductor layer that reflects part or all of the wavelength range of visible light. Note that the reflective member 11 may also absorb part of the visible light. In this case, the reflective member 11 can also be said to be a reflection-absorption member.

[0137] The reflective member 11 can be formed on the surface 3 a of the first substrate 3 by a film formation method such as coating, vapor deposition, sputtering, chemical vapor deposition, or plating. The reflective member 11 can be patterned by etching with a laser or plasma, mechanical scribing, or the like. Alternatively, the reflective member 11 can be formed using a mask or by inkjet printing, thereby eliminating the need for removal processes such as etching and scribing.

[0138] Alternatively, the reflective member 11 may be formed on a base material such as a transparent film. In this case, the base material may be adhered to the surface 3 a of the first substrate 3 .

[0139] Incident light such as sunlight is reflected by the reflective member 11 in the second region 20b. When the reflective member 11 reflects most of the incident light, almost no light is incident on the region of the solar cell element 4 facing the second region 20b. When the reflective member 11 transmits a portion of the incident light, that portion is incident on the solar cell element 4. On the other hand, in the first region 20a, the incident light passes through the first substrate 3 and enters the solar cell element 4. Therefore, the amount of incident light that enters the semiconductor layer 4b in the first region 20a differs from the amount of incident light that enters the semiconductor layer 4b in the second region 20b. Here, the amount of light in the first region 20a is, for example, greater than the amount of light in the second region 20b.

[0140] Here, the solar cell element 4 is capable of generating electricity based on light in the wavelength range reflected by the reflective member 11. Therefore, the current density of the current generated by the solar cell element 4 in the first region 20a is greater than the current density of the current generated by the solar cell element 4 in the second region 20b. That is, in each cell region 2, the current densities in the multiple regions 20 are different from one another.

[0141] As described above, the reflective member 11 is located over the entire second region 20b, but not in the first region 20a. In other words, each cell region 2 has multiple regions 20 with different reflectance spectra (i.e., spectral reflectance) for incident light. Therefore, the external colors of the multiple regions 20, for example, the external colors of the first region 20a and the second region 20b, are different from each other. This improves the design of the solar cell module 1.

[0142] Even in a structure in which the reflective member 11 is located, the width W of the cell region 2 is set so as to reduce the variation in the amount of carrier generation among the multiple cell regions 2. This allows direct current to be extracted from the solar cell module 1 more efficiently.

[0143] <4-2-1. Alternative Embodiments> Alternative embodiments regarding the position of the reflective member 11 are the same as or similar to the position of the absorbing member 10, and are as shown in Figures 20 to 25. In any of the alternative embodiments, the reflective member 11 is positioned across the second region 20b and is not positioned in the first region 20a, so that the first region 20a and the second region 20b can have different external colors.

[0144] The reflecting member 11 may be located on the opposite side of the light absorption layer of the solar cell element 4 from the light source. However, in this structure, the amount of light incident on the solar cell element 4 in the second region 20b is greater. For example, in FIG. 23 , incident light passes through the first substrate 3, the solar cell element 4, the filler 7, and the second substrate 8 in the second region 20b and enters the reflecting member 11. This incident light is reflected by the reflecting member 11, passes through the second substrate 8 and the filler 7, and re-enters the solar cell element 4. Therefore, the amount of light incident on the solar cell element 4 in the second region 20b is greater than the amount of light incident on the solar cell element 4 in the first region 20a. Therefore, the current density in the second region 20b is greater than the current density in the first region 20a. In other words, the magnitude relationship of the current densities is opposite to that in the structure of FIG. 17 . The width W of the cell region 2 is set so as to reduce the variation in the amount of carrier generation in the multiple cell regions 2, so the relationship in magnitude between the widths W of the cell regions 2 is opposite to the relationship in magnitude between the widths W of the cell regions 2 in the structure of Figure 17.

[0145] <4-2-2. Others> In the above example, the reflective member 11 is located only in the second region 20b, but it may also be located only in the first region 20a. In this case, too, the design of the solar cell module 1 can be improved. Furthermore, multiple types of reflective members 11 with different reflectance spectra may be located dispersedly in a planar view. For example, multiple types of reflective members 11 with different external colors may be located in multiple regions 20, respectively. This can further improve the design of the solar cell module 1.

[0146] In plan view, there may be a mixture of absorbing members 10 and reflecting members 11. In short, the cell region 2 may have a plurality of regions 20 that are different from each other in at least one of absorptance spectrum and reflectance spectrum.

[0147] The reflective member 11 may also be a component of the solar cell element 4. For example, the second electrode layer 4c may be formed of a metal and function as the reflective member 11. In this case, the second electrode layer 4c may be located only in the first region 20a. Therefore, the first region 20a and the second region 20b have different external colors. This also improves the design of the solar cell module 1.

[0148] As described above, the solar cell module 1 has been described in detail, but the above description is merely an example in all respects, and the solar cell module 1 is not limited thereto. It is understood that countless examples not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in the above embodiments and examples can be combined or omitted as appropriate, as long as they are not mutually inconsistent.

[0149] It goes without saying that all or part of the components constituting each of the above-described embodiments can be combined as appropriate within the scope of not being inconsistent.

[0150] This disclosure includes the following:

[0151] In one embodiment, (1) a solar cell module includes a plurality of cell regions arranged in a plane along a first direction, each including a solar cell element that generates electricity based on incident light, and a connection portion arranged in a state in which the solar cell elements of the plurality of cell regions are electrically connected in series, wherein the solar cell element includes a first electrode layer, a second electrode layer, and a semiconductor layer located between the first electrode layer and the second electrode layer, and at least one of the plurality of cell regions includes an object portion that is adjacent to the semiconductor layer in a planar view and has a semiconductor or insulator with a band gap energy different from that of the semiconductor layer.

[0152] (2) In the solar cell module of (1) above, the object portion may be located between the first electrode layer and the second electrode layer in at least one of the plurality of cell regions.

[0153] (3) In the solar cell module of (2) above, the object portion may include a semiconductor having a band gap energy different from that of the semiconductor layer.

[0154] (4) In any one of the solar cell modules (1) to (3) above, in at least one of the plurality of cell regions, the semiconductor layer includes a first semiconductor layer and a second semiconductor layer having different band gap energies, and the first semiconductor layer and the second semiconductor layer can be located at different positions from each other in a planar view.

[0155] (5) In any one of the solar cell modules (1) to (4) above, in at least one of the plurality of cell regions, the object portion can be positioned adjacent to the semiconductor layer at least in a second direction perpendicular to the first direction.

[0156] (6) In any one of the solar cell modules (1) to (5) above, in at least one of the plurality of cell regions, the semiconductor layer is positioned in a continuous state between both ends of the at least one of the plurality of cell regions in the first direction, and in at least one of the plurality of cell regions, at least one of the first electrode layer and the second electrode layer can be positioned to avoid an area that overlaps with the object portion in a planar view.

[0157] (7) The solar cell module of (6) above comprises a first substrate on which the solar cell element is located, a second substrate positioned opposite the first substrate, and an insulating filler positioned between the first substrate and the second substrate and covering the solar cell element, wherein the second electrode layer is positioned on the second substrate side relative to the semiconductor layer, and in at least one of the plurality of cell regions, the second electrode layer is positioned to avoid an area that overlaps with the object portion in a planar view, and the object portion may be part of the filler.

[0158] (8) In the solar cell module of (1) or (2) above, the object portion includes an insulator, and at least one of the plurality of cell regions includes a first cell region and a second cell region, and the area of ​​the object portion in the first cell region in a planar view is larger than the area of ​​the object portion in the second cell region, and the width of the first cell region in the first direction can be wider than the width of the second cell region in the first direction.

[0159] In another embodiment, (9) a solar cell module includes: a plurality of cell regions arranged in a plane along a first direction, each including a solar cell element that generates electricity based on incident light; a connection portion arranged in a state in which the solar cell elements of the plurality of cell regions are electrically connected in series; and a member that is positioned in a state in which it overlaps with a first region of at least one of the plurality of cell regions in a planar view but does not overlap with a second region of the at least one of the plurality of cell regions, and that absorbs light in at least a portion of the wavelength range of the incident light.

[0160] In another embodiment, (10) a solar cell module includes: a plurality of cell regions arranged in a plane along a first direction, each including a solar cell element that generates electricity based on incident light; a connection portion arranged in a state in which the solar cell elements of the plurality of cell regions are electrically connected in series; and a member arranged in a planar view so as to overlap with a first region of at least one of the plurality of cell regions other than the cell regions located at both ends in the first direction, but not overlap with a second region of the at least one of the plurality of cell regions, and which reflects light in at least a portion of the wavelength range of the incident light.

[0161] (11) The solar cell module of (9) or (10) above may include a first substrate on which the solar cell element is located, and the member may be located on or inside the first substrate.

[0162] (12) The solar cell module of (9) or (10) above comprises a first substrate on which the solar cell element is located, a second substrate positioned opposite the first substrate, and a filler positioned between the first substrate and the second substrate and covering the solar cell element, and the member can be positioned on or inside the second substrate.

[0163] (13) In the solar cell module of (9) or (10) above, the member can be located on or inside the solar cell element.

[0164] (14) In the solar cell module of (1), (2), (9) or (10) above, the widths of the plurality of cell regions in the first direction can be set so that the variation in the amount of carriers generated per unit time in the plurality of cell regions is smaller than the variation in a hypothetical structure in which the widths of the plurality of cell regions are equal to each other.

[0165] REFERENCE SIGNS LIST 1 Solar cell module 2, 21 to 25 Cell region 21 First cell region (cell region) 22 Second cell region (cell region) 3 First substrate 4, 41 to 45 Solar cell element 4a First electrode layer 4b Semiconductor layer 4b1 First semiconductor layer (semiconductor layer) 4b2 Second semiconductor layer (semiconductor layer) 4c Second electrode layer 5 Object portion 50 Insulating layer 6, 61 to 64 Connection portion 7 Filler 8 Second substrate 10 Member (absorbing member) 11 Member (reflective member)

Claims

1. a plurality of cell regions arranged in a plane along a first direction, each of the cell regions including a solar cell element that generates power based on incident light; a connection portion that is located in a state in which the solar cell elements in the plurality of cell regions are electrically connected in series; Equipped with the solar cell element includes a first electrode layer, a second electrode layer, and a semiconductor layer located between the first electrode layer and the second electrode layer; A solar cell module, wherein at least one of the plurality of cell regions is positioned adjacent to the semiconductor layer in a planar view and includes an object portion having a semiconductor or insulator having a band gap energy different from that of the semiconductor layer.

2. The solar cell module according to claim 1 , A solar cell module, wherein the object portion is located between the first electrode layer and the second electrode layer in the at least one of the plurality of cell regions.

3. The solar cell module according to claim 2, The object portion includes a semiconductor having a band gap energy different from that of the semiconductor layer.

4. The solar cell module according to any one of claims 1 to 3, In the at least one of the plurality of cell regions, the semiconductor layer includes a first semiconductor layer and a second semiconductor layer having band gap energies different from each other, The solar cell module, wherein the first semiconductor layer and the second semiconductor layer are located at different positions from each other in a plan view.

5. The solar cell module according to any one of claims 1 to 3, A solar cell module, wherein in at least one of the plurality of cell regions, the object portion is positioned adjacent to the semiconductor layer at least in a second direction perpendicular to the first direction.

6. The solar cell module according to any one of claims 1 to 3, In the at least one of the plurality of cell regions, the semiconductor layer is located in a continuous state between both ends of the at least one of the plurality of cell regions in the first direction, A solar cell module, wherein in at least one of the plurality of cell regions, at least one of the first electrode layer and the second electrode layer is positioned to avoid an area that overlaps with the object portion in a planar view.

7. The solar cell module according to claim 6, A first substrate on which the solar cell element is located; a second substrate positioned opposite the first substrate; an insulating filler positioned between the first substrate and the second substrate in a state of covering the solar cell element; Equipped with the second electrode layer is located on the second substrate side with respect to the semiconductor layer, in the at least one of the plurality of cell regions, the second electrode layer is positioned so as to avoid a region overlapping with the object portion in a plan view, The object portion is a part of the filler.

8. The solar cell module according to claim 1 or 2, the object portion includes an insulator; the at least one of the plurality of cell regions includes a first cell region and a second cell region; an area of ​​the object portion in the first cell region in a plan view is larger than an area of ​​the object portion in the second cell region; A solar cell module, wherein the width of the first cell region in the first direction is wider than the width of the second cell region in the first direction.

9. a plurality of cell regions arranged in a plane along a first direction, each of the cell regions including a solar cell element that generates power based on incident light; a connection portion that is located in a state in which the solar cell elements in the plurality of cell regions are electrically connected in series; a member that, in a plan view, overlaps with a first region of at least one of the plurality of cell regions and does not overlap with a second region of the at least one of the plurality of cell regions, and absorbs light in at least a part of a wavelength range of the incident light; A solar cell module comprising:

10. a plurality of cell regions arranged in a plane along a first direction, each of the cell regions including a solar cell element that generates power based on incident light; a connection portion that is located in a state in which the solar cell elements in the plurality of cell regions are electrically connected in series; a member that, in a plan view, overlaps with a first region of at least one of the plurality of cell regions other than the cell regions located at both ends in the first direction, and does not overlap with a second region of the at least one of the plurality of cell regions, and reflects light in at least a part of the wavelength range of the incident light; A solar cell module comprising:

11. The solar cell module according to claim 9 or 10, A first substrate on which the solar cell element is located, The member is located on or within the first substrate.

12. The solar cell module according to claim 9 or 10, A first substrate on which the solar cell element is located; a second substrate positioned opposite the first substrate; a filler positioned between the first substrate and the second substrate in a state of covering the solar cell element; Equipped with The member is located on or within the second substrate.

13. The solar cell module according to claim 9 or 10, The member is located on or inside the solar cell element.

14. The solar cell module according to claim 1, claim 2, claim 9 or claim 10, A solar cell module, wherein the widths of the plurality of cell regions in the first direction are set so that a variation in the amount of carriers generated per unit time in the plurality of cell regions is smaller than the variation in a hypothetical structure in which the widths of the plurality of cell regions are equal to each other.